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Sample records for thin cross-tail current

  1. Sudden disruption of the cross-tail current in the magnetotail

    International Nuclear Information System (INIS)

    Ma, Z. W.

    2008-01-01

    A Hall magnetohydrodynamic simulation is used to study current dynamic processes with realistic magnetotail geometry. The simulation results indicate that sudden disruption of cross-tail current at the near Earth region inside 15R E is triggered by fast magnetic reconnection with the reconnection rate ∼0.15. The cross-tail current density exhibits an impulsive intensification in the late growth phase. The magnitude of the current increases more than one order within a few minutes. After the reconnection onset, the cross-tail current is suddenly disrupted in a few Alfven times, which is in good agreement with that from the satellite observations. Associated with the current disruption, the tail-like geometry becomes a dipolarlike structure with an impulsive enhancement of the magnetic field B z . Large increases of the electric field and Earthward bulk flow in this simulation are observed immediately after the reconnection onset

  2. Method for confining the magnetic field of the cross-tail current inside the magnetopause

    Science.gov (United States)

    Sotirelis, T.; Tsyganenko, N. A.; Stern, D. P.

    1994-01-01

    A method is presented for analytically representing the magnetic field due to the cross-tail current and its closure on the magnetopause. It is an extension of a method used by Tsyganenko (1989b) to confine the dipole field inside an ellipsoidal magnetopause using a scalar potential. Given a model of the cross-tail current, the implied net magnetic field is obtained by adding to the cross-tail current field a potential field B = - del gamma, which makes all field lines divide into two disjoint groups, separated by the magnetopause (i.e., the combined field is made to have zero normal component with the magnetopause). The magnetopause is assumed to be an ellipsoid of revolution (a prolate spheroid) as an approximation to observations (Sibeck et al., 1991). This assumption permits the potential gamma to be expressed in spheroidal coordinates, expanded in spheroidal harmonics and its terms evaluated by performing inversion integrals. Finally, the field outside the magnetopause is replaced by zero, resulting in a consistent current closure along the magnetopause. This procedure can also be used to confine the modeled field of any other interior magnetic source, though the model current must always flow in closed circuits. The method is demonstrated on the T87 cross-tail current, examples illustrate the effect of changing the size and shape of the prescribed magnetopause and a comparison is made to an independent numerical scheme based on the Biot-Savart equation.

  3. Dynamic Processes of Cross-Tail Current in the Near-Earth Magnetotail

    International Nuclear Information System (INIS)

    Xing-Qiang, Lu; Zhi-Wei, Ma

    2009-01-01

    Current dynamic processes in realistic magnetotail geometry are studied by Hall magnetohydrodynamic (MHD) simulations under various driven conditions and Hall effects. Associated with the external driving force, a thin current sheet with a broad extent is built up in the near-Earth magnetotail. The time evolution for the formation of the current sheet comprises two phases: slow growth and a fast impulsive phase before the near-Earth disruption of the current sheet resulting from the fast magnetic reconnection. The simulation results indicate that as the external driving force increases, the site and the tailward speed of the near-Earth current disruption region are closer to the Earth and faster, respectively. Whether the near-Earth disruption of the current sheet takes place or not is mainly controlled by Hall effects. It is found that there is no sudden disruption of the current sheet in the near-Earth region if the ion inertial length is below d i = 0.04. (geophysics, astronomy, and astrophysics)

  4. Near-earth Thin Current Sheets and Birkeland Currents during Substorm Growth Phase

    International Nuclear Information System (INIS)

    Sorin Zaharia; Cheng, C.Z.

    2003-01-01

    Two important phenomena observed during the magnetospheric substorm growth phase are modeled: the formation of a near-Earth (|X| ∼ 9 R E ) thin cross-tail current sheet, as well as the equatorward shift of the ionospheric Birkeland currents. Our study is performed by solving the 3-D force-balance equation with realistic boundary conditions and pressure distributions. The results show a cross-tail current sheet with large current (J φ ∼ 10 nA/m 2 ) and very high plasma β (β ∼ 40) between 7 and 10 R E . The obtained region-1 and region-2 Birkeland currents, formed on closed field lines due to pressure gradients, move equatorward and become more intense (J parallel max ∼ 3 (micro)A/m 2 ) compared to quiet times. Both results are in agreement with substorm growth phase observations. Our results also predict that the cross-tail current sheet maps into the ionosphere in the transition region between the region-1 and region-2 currents

  5. Nonlinear equilibrium structure of thin currents sheets: influence of electron pressure anisotropy

    Directory of Open Access Journals (Sweden)

    L. M. Zelenyi

    2004-01-01

    Full Text Available Thin current sheets represent important and puzzling sites of magnetic energy storage and subsequent fast release. Such structures are observed in planetary magnetospheres, solar atmosphere and are expected to be widespread in nature. The thin current sheet structure resembles a collapsing MHD solution with a plane singularity. Being potential sites of effective energy accumulation, these structures have received a good deal of attention during the last decade, especially after the launch of the multiprobe CLUSTER mission which is capable of resolving their 3D features. Many theoretical models of thin current sheet dynamics, including the well-known current sheet bifurcation, have been developed recently. A self-consistent 1D analytical model of thin current sheets in which the tension of the magnetic field lines is balanced by the ion inertia rather than by the plasma pressure gradients was developed earlier. The influence of the anisotropic electron population and of the corresponding electrostatic field that acts to restore quasi-neutrality of the plasma is taken into account. It is assumed that the electron motion is fluid-like in the direction perpendicular to the magnetic field and fast enough to support quasi-equilibrium Boltzmann distribution along the field lines. Electrostatic effects lead to an interesting feature of the current density profile inside the current sheet, i.e. a narrow sharp peak of electron current in the very center of the sheet due to fast curvature drift of the particles in this region. The corresponding magnetic field profile becomes much steeper near the neutral plane although the total cross-tail current is in all cases dominated by the ion contribution. The dependence of electrostatic effects on the ion to electron temperature ratio, the curvature of the magnetic field lines, and the average electron magnetic moment is also analyzed. The implications of these effects on the fine structure of thin current sheets

  6. Thin tube testing by eddy currents

    International Nuclear Information System (INIS)

    David, Bernard; Pigeon, Michel

    1981-01-01

    It is often necessary to define test conditions in eddy current testing, in consequence rules and laws allowing a rapid choice of these conditions are welcome. The similarity law, given by Forster, using the reduced frequency f/fg, allows extrapolation of results from an object to one another, if these two objects are similar (i.e. all their dimensions are proportional). In a particular case, often met, a law going further is given to describe, in a sole way, eddy current behaviour using the reduced frequency in all thin tubes (internal to external diameter ratio between 0.85 to 1). For instance working at f/fe=2 defines the same verification leading to identical results, whatever the nature, the diameter or the thickness may be, if the tubes are thin. A diagram is given and a slide-rule, based on this principle, has been realized [fr

  7. Thin film eddy current impulse deicer

    Science.gov (United States)

    Smith, Samuel O.; Zieve, Peter B.

    1990-01-01

    Two new styles of electrical impulse deicers has been developed and tested in NASA's Icing Research Tunnel. With the Eddy Current Repulsion Deicing Boot (EDB), a thin and flexible spiral coil is encapsulated between two thicknesses of elastomer. The coil, made by an industrial printed circuit board manufacturer, is bonded to the aluminum aircraft leading edge. A capacitor bank is discharged through the coil. Induced eddy currents repel the coil from the aluminum aircraft structure and shed accumulated ice. A second configuration, the Eddy Current Repulsion Deicing-Strip (EDS) uses an outer metal erosion strip fastened over the coil. Opposite flowing eddy currents repel the strip and create the impulse deicing force. The outer strip serves as a surface for the collection and shedding of ice and does not require any structural properties. The EDS is suitable for composite aircraft structures. Both systems successfully dispelled over 95 percent of the accumulated ice from airfoils over the range of the FAA icing envelope.

  8. Nonlinear dynamics of thin current sheets

    International Nuclear Information System (INIS)

    Daughton, William

    2002-01-01

    Observations indicate that the current sheet in the Earth's geomagnetic tail may compress to a thickness comparable to an ion gyro-radius prior to substorm onset. In recent years, there has been considerable controversy regarding the kinetic stability of these thin structures. In particular, the growth rate of the kink instability and its relevance to magnetotail dynamics is still being debated. In this work, a series of fully kinetic particle-in-cell simulations are performed for a thin Harris sheet. The ion to electron mass ratio is varied between m i /m e =4→400 and careful comparisons are made with a formally exact approach to the linear Vlasov theory. At low mass ratio m i /m e <64, the simulations are in excellent agreement with the linear theory, but at high mass ratio the kink instability is observed to grow more rapidly in the kinetic simulations than predicted by theory. The resolution to this apparent discrepancy involves the lower hybrid instability which is active on the edge of the sheet and rapidly produces nonlinear modifications to the initial equilibrium. The nature of this nonlinear deformation is characterized and a simple model is proposed to explain the physics. After the growth and saturation of the lower hybrid fluctuations, the deformed current sheet is similar in structure to a Harris equilibrium with an additional background population. This may explain the large growth rate of the kink instability at later times, since this type of modification to the Harris sheet has been shown to greatly enhance the growth rate of the kink mode

  9. The distortion of the magnetotail equilibrium structure by a net cross-tail magnetic field

    International Nuclear Information System (INIS)

    Birn, J.

    1990-01-01

    Observations have shown that in addition to a y component associated with the flaring of the tail, a net y component of the magnetic field can persist in the geomagnetic tail, roughly proportional to the interplanetary B y . The author uses the tail equilibrium theory outlined by Birn (1987) to construct self-consistent three-dimensional models of the tail that include this effect. He finds that the net B yN field varies only weakly along field lines and across the tail. The presence of the net B yN in the neutral sheet implies that a part of the cross-tail current becomes field-aligned, flowing from the southern to the northern hemisphere for B yN > 0 and from north to south for B yN yN for small values. For a typical value of 2% of the lobe field strength the author finds a total current of 4.4 x 10 5 A flowing toward one hemisphere at x = -20 R E . This current, however is not expected to reach the Earth, because it decreases strongly along each field line away from the neutral sheet, due to a conversion into perpendicular current. The deformations of magnetic flux surfaces, implied by the models, are not consistent with an entirely closed magnetotail boundary. They suggest that in addition to traditional lobe field lines, interconnected with the solar wind field at large distances or high latitudes, there may be a class of field lines extending from the Earth into the magnetosheath region through the low latitude flanks of the tail. These field lines, which might even be associated with positive B z at a neutral sheet crossing, effectively reduce the region of closed flux. For typical values of B yN of 2% of the lobe field this effect is small, but for values above about 10%, not extremely unusual, it can be appreciable

  10. Eddy Current Testing for Detecting Small Defects in Thin Films

    Science.gov (United States)

    Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

    2007-03-01

    Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

  11. Cross-tail velocity component in the plasma sheet fast flows

    Directory of Open Access Journals (Sweden)

    N. P. Dmitrieva

    2008-06-01

    Full Text Available The flux transfer in the magnetotail plasma sheet is mainly provided by the tail-aligned fast plasma flows (Bursty Bulk Flows – BBFs. In this paper we study the events with a large cross-tail velocity component, including their occurrence and relationship to the standard BBFs. We found out that a significant part of large Vy events are a subgroup connected with the BBFs propagation. The maximal deviation of the velocity vector from the X direction (about 40–50 degrees, on average is observed near the BBFs' leading front in the sheath, where the fast flow interacts with surrounding plasma. The average variation of the velocity direction in the vicinity of the BBF resembles a plasma vortex. Our results support the model, in which the BBF represents a polarized, bubble-like flux tube, propagating through the plasma sheet.

  12. Aharanov--Bohm currents in thin superconducting cylinders

    International Nuclear Information System (INIS)

    Kunstatter, G.; Revzen, M.; Trainor, L.E.H.

    1983-01-01

    The Aharanov--Bohm effect is the influence of classically inaccessible electromagnetic fields on quantum wave functions. In this paper we consider the Ginsburg--Landau (GL) equations for the stationary states of a thin, superconducting cylinder in the presence of a curl-free, static electromagnetic potential corresponding to zero fields. We solve the GL equations explicitly to obtain self-consistent solutions for the current density, the induced field and the free energy in a well-defined and accessible approximation. The analysis makes quantitative predictions which can, in principle, be experimentally tested to provide a clear and convincing demonstration of the Aharanov--Bohm effect

  13. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  14. Counter-current flow limited CHF in thin rectangular channels

    International Nuclear Information System (INIS)

    Cheng, L.Y.

    1990-01-01

    An analytical expression for counter-current-flow-limitation (CCFL) was used to predict critical heat flux (CHF) for downward flow in thin vertical rectangular channels which are prototypes of coolant channels in test and research nuclear reactors. Top flooding is the mechanism for counter-current flow limited CHF. The CCFL correlation also was used to determine the circulation and flooding-limited CHF. Good agreements were observed between the period the model predictions and data on the CHF for downflow. The minimum CHF for downflow is lower than the flooding-limited CHF and it is predicted to occur at a liquid flow rate higher than that at the flooding limit. 17 refs., 7 figs

  15. Imaging of current distributions in superconducting thin film structures

    International Nuclear Information System (INIS)

    Doenitz, D.

    2006-01-01

    Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tuebingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference devices

  16. Ultra-high current density thin-film Si diode

    Science.gov (United States)

    Wang, Qi [Littleton, CO

    2008-04-22

    A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.

  17. Determining Confounding Sensitivities In Eddy Current Thin Film Measurements

    Energy Technology Data Exchange (ETDEWEB)

    Gros, Ethan; Udpa, Lalita; Smith, James A.; Wachs, Katelyn

    2016-07-01

    Determining Confounding Sensitivities In Eddy Current Thin Film Measurements Ethan Gros, Lalita Udpa, Electrical Engineering, Michigan State University, East Lansing MI 48824 James A. Smith, Experiment Analysis, Idaho National Laboratory, Idaho Falls ID 83415 Eddy current (EC) techniques are widely used in industry to measure the thickness of non-conductive films on a metal substrate. This is done using a system whereby a coil carrying a high-frequency alternating current is used to create an alternating magnetic field at the surface of the instrument's probe. When the probe is brought near a conductive surface, the alternating magnetic field will induce ECs in the conductor. The substrate characteristics and the distance of the probe from the substrate (the coating thickness) affect the magnitude of the ECs. The induced currents load the probe coil affecting the terminal impedance of the coil. The measured probe impedance is related to the lift off between coil and conductor as well as conductivity of the test sample. For a known conductivity sample, the probe impedance can be converted into an equivalent film thickness value. The EC measurement can be confounded by a number of measurement parameters. It is the goal of this research to determine which physical properties of the measurement set-up and sample can adversely affect the thickness measurement. The eddy current testing is performed using a commercially available, hand held eddy current probe (ETA3.3H spring loaded eddy probe running at 8 MHz) that comes with a stand to hold the probe. The stand holds the probe and adjusts the probe on the z-axis to help position the probe in the correct area as well as make precise measurements. The signal from the probe is sent to a hand held readout, where the results are recorded directly in terms of liftoff or film thickness. Understanding the effect of certain factors on the measurements of film thickness, will help to evaluate how accurate the ETA3.3H spring

  18. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    International Nuclear Information System (INIS)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.

    1998-01-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices

  19. Current status of thin seam longwall mining in the US

    Energy Technology Data Exchange (ETDEWEB)

    Peng, S.S. [West Virginia Univ., Morgantown, WV (United States); Orndorff, A.

    1996-12-31

    Thin seams in this paper refers to those seams the economic mining height of which is below 50-55 in. that are traditionally considered to be the proprietary of plowing and present a whole net set of problems for longwall mining. In thin seams it is difficult to design and manufacture an efficient high capacity cutting machine for maintenance and production operations. Thin seam mining by longwall plowing began in the late fifties in southern West Virginia, and continues to the present time. In the seventies when longwall mining began to take off a large percentage of U.S. longwalls were operating in the thin seams. Tables 1 and 2 show the historical trends of cutting machines used for seams less than 55 in and 50 in, respectively. In addition to the plow system, the single-ended fixed drum and single-ended ranging drum shearers were introduced in the mid and late seventies and operated continuously until 2-4 years ago. The double-ended ranging drum shearers have also been employed for thin seam longwall mining during this period including several in-web (or off-pan) shearers between late seventies and early eighties. In this paper three thin-seam longwalls in three states employing the latest thin-seam longwall technology will be reviewed. However only two of them are still in operation while the third one ceased operation recently.

  20. Sausage mode instability of thin current sheets as a cause of magnetospheric substorms

    Directory of Open Access Journals (Sweden)

    J. Büchner

    Full Text Available Observations have shown that, prior to substorm explosions, thin current sheets are formed in the plasma sheet of the Earth's magnetotail. This provokes the question, to what extent current-sheet thinning and substorm onsets are physically, maybe even causally, related. To answer this question, one has to understand the plasma stability of thin current sheets. Kinetic effects must be taken into account since particle scales are reached in the course of tail current-sheet thinning. We present the results of theoretical investigations of the stability of thin current sheets and about the most unstable mode of their decay. Our conclusions are based upon a non-local linear dispersion analysis of a cross-magnetic field instability of Harris-type current sheets. We found that a sausage-mode bulk current instability starts after a sheet has thinned down to the ion inertial length. We also present the results of three-dimensional electromagnetic PIC-code simulations carried out for mass ratios up to Mi / me=64. They verify the linearly predicted properties of the sausage mode decay of thin current sheets in the parameter range of interest.

    Key words. Magnetospheric physics (plasma waves and instabilities; storms and substorms · Space plasma physics (magnetic reconnection

  1. Thin current sheets observation by MMS during a near-Earth's magnetotail reconnection event

    Science.gov (United States)

    Nakamura, R.; Varsani, A.; Nakamura, T.; Genestreti, K.; Plaschke, F.; Baumjohann, W.; Nagai, T.; Burch, J.; Cohen, I. J.; Ergun, R.; Fuselier, S. A.; Giles, B. L.; Le Contel, O.; Lindqvist, P. A.; Magnes, W.; Schwartz, S. J.; Strangeway, R. J.; Torbert, R. B.

    2017-12-01

    During summer 2017, the four spacecraft of the Magnetospheric Multiscale (MMS) mission traversed the nightside magnetotail current sheet at an apogee of 25 RE. They detected a number of flow reversal events suggestive of the passage of the reconnection current sheet. Due to the mission's unprecedented high-time resolution and spatial separation well below the ion scales, structure of thin current sheets is well resolved both with plasma and field measurements. In this study we examine the detailed structure of thin current sheets during a flow reversal event from tailward flow to Earthward flow, when MMS crossed the center of the current sheet . We investigate the changes in the structure of the thin current sheet relative to the X-point based on multi-point analysis. We determine the motion and strength of the current sheet from curlometer calculations comparing these with currents obtained from the particle data. The observed structures of these current sheets are also compared with simulations.

  2. Constant-current corona triode adapted and optimized for the characterization of thin dielectric films

    Science.gov (United States)

    Giacometti, José A.

    2018-05-01

    This work describes an enhanced corona triode with constant current adapted to characterize the electrical properties of thin dielectric films used in organic electronic devices. A metallic grid with a high ionic transparency is employed to charge thin films (100 s of nm thick) with a large enough charging current. The determination of the surface potential is based on the grid voltage measurement, but using a more sophisticated procedure than the previous corona triode. Controlling the charging current to zero, which is the open-circuit condition, the potential decay can be measured without using a vibrating grid. In addition, the electric capacitance and the characteristic curves of current versus the stationary surface potential can also be determined. To demonstrate the use of the constant current corona triode, we have characterized poly(methyl methacrylate) thin films with films with thicknesses in the range from 300 to 500 nm, frequently used as gate dielectric in organic field-effect transistors.

  3. Impedance of thin film cathodes: thickness and current collector dependence

    NARCIS (Netherlands)

    Boukamp, Bernard A.; Hildenbrand, N.; Bouwmeester, Henricus J.M.; Blank, David H.A.

    2015-01-01

    The influence of the layer thickness of mixed ionic–electronic conducting (MIEC) cathodes and the type of noble metal current collector on the apparent surface exchange resistance is studied with impedance spectroscopy. The impedance data is analyzed with the ‘General Finite Length Diffusion’

  4. PVD processes of thin films deposition using Hall-current discharge

    International Nuclear Information System (INIS)

    Svadkovskij, I.V.

    2007-01-01

    Results of research and developments in the field of PVD processes of thin films deposition using Hall-current discharge have been summarized. Effects of interaction of ions with surface during deposition have been considered. Also features of application and prospects of devices based on ion beam and magnetron sputtering systems in thin films technologies have been analyzed. The aspects in the field plasma physics, technology and equipment plasma PVD processes of thin films deposition have been systematized, on the base of investigations made by author and other scientists. (authors)

  5. Critical current density measurement of thin films by AC susceptibility based on the penetration parameter h

    DEFF Research Database (Denmark)

    Li, Xiao-Fen; Grivel, Jean-Claude; Abrahamsen, Asger B.

    2012-01-01

    We have numerically proved that the dependence of AC susceptibility χ of a E(J) power law superconducting thin disc on many parameters can be reduced to one penetration parameter h, with E the electric field and J the current density. Based on this result, we propose a way of measuring the critical...... current density Jc of superconducting thin films by AC susceptibility. Compared with the normally used method based on the peak of the imaginary part, our method uses a much larger range of the AC susceptibility curve, thus allowing determination of the temperature (T) dependence of Jc from a normally...

  6. Prospects for enhancement of critical current of HTSC: thin films with artificial pinning centres

    Energy Technology Data Exchange (ETDEWEB)

    Mozhaev, P.B. (Institute of Physics and Technology RAS, Moscow (Russian Federation)); Mozhaev, J.E.; Khoryushin, A.V.; Bindslev Hansen, J.; Jacobsen, C.S. (Technical Univ. of Denmark, Dept. of Physics, Kgs. Lyngby (Denmark)); Kotelyanskil, I.M.; Luzanov, V.A. (Institute of Radio Engineering and Electronics RAS, Moscow (Russian Federation)); Puriy, A.V. (Moscow Institute of Physics and Technology, Moscow (Russian Federation)); Yurchenko, V.; Johansen, T. (Univ. of Oslo, Dept. of Physics, Oslo (Norway))

    2008-10-15

    Improvement of the critical current of YBCO thin films and heterostructures remains one of the main tasks for fabrication of modern superconducting wires and connectors. Possible ways of achieving the goal are choice of superconductor composition, engineering of artificial pinning centres, and combination of the superconducting layer with other materials. The team of the Department of Physics at Technical University of Denmark is working in all these fields and this paper is a short review of our achievements in an attempt to improve the critical current density of YBCO thin films. (au)

  7. Detection of wall thinning of carbon steel pipe covered with insulation using Pulsed Eddy Current technique

    International Nuclear Information System (INIS)

    Park, Duckgun; Kishore, M. B.; Lee, D. H.

    2013-01-01

    The test sample is a ferromagnetic carbon steel pipe having different thickness, covered with a 10 cm plastic insulation laminated by 0.4 mm Al plate to simulate the pipelines in NPPs. The PEC Probe used for the wall thinning detection consists of an excitation coil and a Hall sensor. The excitation coils in the probe is driven by a rectangular bipolar current pulse and the Hall-sensor will detects the resultant field. The Hall sensor output is considered as PEC signal. Results shows that the PEC system can detect wall thinning in an insulated pipeline of the NPPs. Local wall thinning in pipelines affects the structural integrity of industries like nuclear power plants (NPPs). In the present study a pulsed eddy current (PEC) technology to detect the wall thing of carbon steel pipe covered with insulation is developed

  8. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  9. Electron Cooling and Isotropization during Magnetotail Current Sheet Thinning: Implications for Parallel Electric Fields

    Science.gov (United States)

    Lu, San; Artemyev, A. V.; Angelopoulos, V.

    2017-11-01

    Magnetotail current sheet thinning is a distinctive feature of substorm growth phase, during which magnetic energy is stored in the magnetospheric lobes. Investigation of charged particle dynamics in such thinning current sheets is believed to be important for understanding the substorm energy storage and the current sheet destabilization responsible for substorm expansion phase onset. We use Time History of Events and Macroscale Interactions during Substorms (THEMIS) B and C observations in 2008 and 2009 at 18 - 25 RE to show that during magnetotail current sheet thinning, the electron temperature decreases (cooling), and the parallel temperature decreases faster than the perpendicular temperature, leading to a decrease of the initially strong electron temperature anisotropy (isotropization). This isotropization cannot be explained by pure adiabatic cooling or by pitch angle scattering. We use test particle simulations to explore the mechanism responsible for the cooling and isotropization. We find that during the thinning, a fast decrease of a parallel electric field (directed toward the Earth) can speed up the electron parallel cooling, causing it to exceed the rate of perpendicular cooling, and thus lead to isotropization, consistent with observation. If the parallel electric field is too small or does not change fast enough, the electron parallel cooling is slower than the perpendicular cooling, so the parallel electron anisotropy grows, contrary to observation. The same isotropization can also be accomplished by an increasing parallel electric field directed toward the equatorial plane. Our study reveals the existence of a large-scale parallel electric field, which plays an important role in magnetotail particle dynamics during the current sheet thinning process.

  10. Determination of diffusion coefficients in polypyrrole thin films using a current pulse relaxation method

    Science.gov (United States)

    Penner, Reginald M.; Vandyke, Leon S.; Martin, Charles R.

    1987-01-01

    The current pulse E sub oc relaxation method and its application to the determination of diffusion coefficients in electrochemically synthesized polypyrrole thin films is described. Diffusion coefficients for such films in Et4NBF4 and MeCN are determined for a series of submicron film thicknesses. Measurement of the double-layer capacitance, C sub dl, and the resistance, R sub u, of polypyrrole thin films as a function of potential obtained with the galvanostatic pulse method is reported. Measurements of the electrolyte concentration in reduced polypyrrole films are also presented to aid in the interpretation of the data.

  11. Direct current magnetron sputter-deposited ZnO thin films

    International Nuclear Information System (INIS)

    Hoon, Jian-Wei; Chan, Kah-Yoong; Krishnasamy, Jegenathan; Tou, Teck-Yong; Knipp, Dietmar

    2011-01-01

    Zinc oxide (ZnO) is a very promising electronic material for emerging transparent large-area electronic applications including thin-film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 150 nm to 750 nm were deposited on glass substrates. The deposition pressure and the substrate temperature were varied from 12 mTorr to 25 mTorr, and from room temperature to 450 deg. C, respectively. The influence of the film thickness, deposition pressure and the substrate temperature on structural and optical properties of the ZnO films was investigated using atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrometer. The experimental results reveal that the film thickness, deposition pressure and the substrate temperature play significant role in the structural formation and the optical properties of the deposited ZnO thin films.

  12. Cross-Field Current Instabilities in Thin Ionization Layers and the Enhanced Aurora

    International Nuclear Information System (INIS)

    Johnson, Jay R.; Okuda, Hideo

    2008-01-01

    Nearly half of the time, auroral displays exhibit thin, bright layers known as 'enhanced aurora'. There is a substantial body of evidence that connects these displays with thin, dense, heavy ion layers in the E-region. Based on the spectral characteristics of the enhanced layers, it is believed that they result when wave-particle interaction heats ambient electrons to energies at or just above the 17 eV ionization energy of N2. While there are several possible instabilities that could produce suprathermal electrons in thin layers, there has been no clear theoretical investigation which examines in detail how wave instabilities in the thin ionization layers could develop and produce the suprathermal electrons. We examine instabilities which would occur in thin, dense, heavy ion layers using extensive analytical analysis combined with particle simulations. We analyze a cross field current instability that is found to be strongly unstable in the heavy ion layers. Electrostatic simulations show that substantial heating of the ambient electrons occurs with energization at or above the N2 ionization energy.

  13. Evaluation on current-limiting performance of the YBCO thin-film wire considering electric coupling condition

    International Nuclear Information System (INIS)

    Du, H.-I.; Han, B.-S.; Kim, Y.-J.; Lee, D.-H.; Song, S.-S.; Han, T.-H.; Han, S.-C.

    2011-01-01

    The basic way to improve the performance of a superconducting current limiter is to apply and evaluate a superconducting device that is appropriate to the superconducting current limiter. Among the many types of superconducting devices, the YBCO thin film wire has excellent current-limiting performance that is appropriate for actual system application. For the application of the YBCO thin film wire to superconducting current limiters, its current-limiting performance as a unit device must be accurately evaluated, and measures to improve its current-limiting performance must be sought. Accordingly, to evaluate the current-limiting performance of the YBCO thin film wire, this study was conducted to evaluate its resistance-increasing trend, V max , T r , I max , I qt , and current-limiting rate as a unit device, after which the electric coupling condition that consists of a core and windings was used to evaluate the current-limiting performance of the YBCO thin film wire.

  14. Onset of fast "ideal" tearing in thin current sheets: Dependence on the equilibrium current profile

    Science.gov (United States)

    Pucci, F.; Velli, M.; Tenerani, A.; Del Sarto, D.

    2018-03-01

    In this paper, we study the scaling relations for the triggering of the fast, or "ideal," tearing instability starting from equilibrium configurations relevant to astrophysical as well as laboratory plasmas that differ from the simple Harris current sheet configuration. We present the linear tearing instability analysis for equilibrium magnetic fields which (a) go to zero at the boundary of the domain and (b) contain a double current sheet system (the latter previously studied as a Cartesian proxy for the m = 1 kink mode in cylindrical plasmas). More generally, we discuss the critical aspect ratio scalings at which the growth rates become independent of the Lundquist number S, in terms of the dependence of the Δ' parameter on the wavenumber k of unstable modes. The scaling Δ'(k) with k at small k is found to categorize different equilibria broadly: the critical aspect ratios may be even smaller than L/a ˜ Sα with α = 1/3 originally found for the Harris current sheet, but there exists a general lower bound α ≥ 1/4.

  15. Thin Film Energy Storage Device with Spray‐Coated Sliver Paste Current Collector

    Directory of Open Access Journals (Sweden)

    Seong Man Yoon

    2017-12-01

    Full Text Available This paper challenges the fabrication of a thin film energy storage device on a flexible polymer substrate specifically by replacing most commonly used metal foil current collectors with coated current collectors. Mass‐manufacturable spray‐coating technology enables the fabrication of two different half‐cell electric double layer capacitors (EDLC with a spray‐coated silver paste current collector and a Ni foil current collector. The larger specific capacitances of the half‐cell EDLC with the spray‐coated silver current collector are obtained as 103.86 F/g and 76.8 F/g for scan rates of 10 mV/s and 500 mV/s, respectively. Further, even though the half‐cell EDLC with the spray‐coated current collector is heavier than that with the Ni foil current collector, smaller Warburg impedance and contact resistance are characterized from Nyquist plots. For the applied voltages ranging from −0.5 V to 0.5 V, the spray‐coated thin film energy storage device exhibits a better performance.

  16. Wind effect on currents in a thin surface layer of coastal waters faced open-sea

    International Nuclear Information System (INIS)

    Nakano, Masanao; Isozaki, Hisaaki; Isozaki, Tokuju; Nemoto, Masashi; Hasunuma, Keiichi; Kitamura, Takashi

    2009-01-01

    Two-years of continuous observation of wind and current were carried out to investigate the relationship between them in the coastal waters off Tokai-mura, Ibaraki prefecture. Three instruments to measure the current were set in a thin surface layer of 3 m above the strong pycnocline, which is a common feature in coastal waters. Both of the power spectra of wind and currents showed very similar features, an outstanding high peak at 24-hour period and a range of high peaks longer than several-days period. The long term variation of the wind field always contained north-wind component, which contributed to forming the southward current along the shore throughout the year. A high correlation coefficient (0.64) was obtained between the wind and the current at a depth of 0.5 m on the basis of the two-year observation. Harmonic analysis revealed that an outstanding current with 24-hour period was the S 1 component (meteorological tide), and was driven by land and sea breezes. These breezes also contained solar tidal components such as K 1 , P 1 and S 2 . These wind components added their own wind driven currents on the original tidal currents. This meant that land and sea breezes generated wind driven currents with solar tidal periods which behaved like astronomical tidal currents. As result, coastal currents contained pseudo tidal currents which behaved like astronomical tidal currents. (author)

  17. Current distribution effects in AC impedance spectroscopy of electroceramic point contact and thin film model electrodes

    DEFF Research Database (Denmark)

    Nielsen, Jimmi; Jacobsen, Torben

    2010-01-01

    the primary current distribution to the DC current distribution restricted to the Three-Phase-Boundary (TPB) zone introduces an error in the determination of the reaction resistance, Rreac = Z(freq. → 0) − Z(freq. → ∞). The error is estimated for different width of the effective TPB zone and a rule of thumb...... regarding its significance is provided. The associated characteristic impedance spectrum shape change is simulated and its origin discussed. Furthermore, the characteristic shape of impedance spectra of thin electroceramic film electrodes with lateral ohmic resistance is studied as a function...

  18. Dependence of critical current density on crystalline direction in thin YBCO films

    DEFF Research Database (Denmark)

    Paturi, P.; Peurla, M.; Raittila, J.

    2005-01-01

    The dependence of critical current density (J(c)) on the angle between the current direction and the (100) direction in the ab-plane of thin YBCO films deposited on (001)-SrTiO3 from natiocrystalline and microcrystalline targets is studied using magneto-optical microscopy. In the films made from...... the nanocrystalline target it is found that J(c) does not depend on the angle whereas J(c) decreases with increasing angle in the films made from the microcrystalline target. The films were characterized by detailed X-ray diffraction measurements. The findings are explained in terms of a network of planar defects...

  19. Exponential temperature dependence of the critical transport current in Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Yom, S.S.; Hahn, T.S.; Kim, Y.H.; Chu, H.; Choi, S.S.

    1989-01-01

    We have measured the critical currents in rf-sputtered YBa 2 Cu 3 O/sub 7-x/ thin films deposited on polycrystalline yttria-stabilized zirconia substrates as a function of temperature down to 10 K. The dependence of the granular films at low temperature indicated exponential behavior which is similar to the superconductor-normal metal-superconductor (S-N-S) type tunneling junctions. For the films with a grain size of approximately 1 μm, we observed two exponential decay constants, which suggest that Josephson junctions limiting the transport critical current are possible both at the grain boundaries and at twin boundaries

  20. Direct current magnetron sputtering deposition of InN thin films

    International Nuclear Information System (INIS)

    Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

    2009-01-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  1. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    Science.gov (United States)

    Schroeder, Herbert

    2015-06-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current-electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current-electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F1/2) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current-electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide

  2. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  3. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  4. Anomalous resistivity due to kink modes in a thin current sheet

    International Nuclear Information System (INIS)

    Moritaka, Toseo; Horiuchi, Ritoku; Ohtani, Hiroaki

    2007-01-01

    The roles of microscopic plasma instabilities on the violation of the frozen-in constraint are investigated by examining the force balance equation based on explicit electromagnetic particle simulation for a thin current sheet. Wave-particle interactions associated with lower hybrid drift instability and drift kink instability (DKI) contribute to the wavy electric force term at the periphery of the current sheet and the wavy magnetic force term at the neutral sheet, respectively. In the linear growing phase of DKI, the wavy magnetic force term balances with the electric force term due to the dc electric field at the neutral sheet. It is concluded that the growth of DKI can create anomalous resistivity and result in the violation of the frozen-in constraint as well as the diffusion of current density

  5. Direct observation of the current distribution in thin superconducting strips using magneto-optic imaging

    International Nuclear Information System (INIS)

    Johansen, T.H.; Baziljevich, M.; Bratsberg, H.; Galperin, Y.; Lindelof, P.E.; Shen, Y.; Vase, P.

    1996-01-01

    Magneto-optic imaging was used for a detailed study of the flux and current distribution of a long thin strip of YBa 2 Cu 3 O 7-δ placed in a perpendicular external magnetic field. The inverse magnetic problem, i.e., that of deriving from a field map the underlying current distribution, is formulated and solved for the strip geometry. Applying the inversion to the magneto-optically found field map we find on a model-independent basis the current distribution across the strip to be in remarkable agreement with the profile predicted by the Bean model. The paper also presents results on the behavior of the Bi-doped YIG film with in-plane anisotropy which we use as field indicator, explaining why previous measurements of flux density profiles have displayed surprisingly large deviations from the expected behavior. copyright 1996 The American Physical Society

  6. Accurate characterization of organic thin film transistors in the presence of gate leakage current

    Directory of Open Access Journals (Sweden)

    Vinay K. Singh

    2011-12-01

    Full Text Available The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT prevents accurate estimation of transistor characteristics especially in subthreshold regime. To mitigate the impact of gate leakage on transfer characteristics and allow accurate estimation of mobility, subthreshold slope and on/off current ratio, a measurement technique involving simultaneous sweep of both gate and drain voltages is proposed. Two dimensional numerical device simulation is used to illustrate the validity of the proposed technique. Experimental results obtained with Pentacene/PMMA OTFT with significant gate leakage show a low on/off current ratio of ∼ 102 and subthreshold is 10 V/decade obtained using conventional measurement technique. The proposed technique reveals that channel on/off current ratio is more than two orders of magnitude higher at ∼104 and subthreshold slope is 4.5 V/decade.

  7. Simplified expression for the minimum hotspot current in long, thin-film superconductors

    International Nuclear Information System (INIS)

    Dharmadurai, G.; Murthy, N.S.S.

    1979-01-01

    A generalization of the Skocpol--Beasley--Tinkham hotspot theory to include an approximate temperature dependence of the conductive heat transfer term of the heat flow equations clearly indicates that the role of the thermal conductivity of the material of the film is not reflected in the observed temperature dependence of the minimum current I/sub h/ required to sustain a hotspot in a long, thin-film superconductor. This observation leads to the derivation of a simplified expression for I/sub h/ valid for a wider range of bath temperatures

  8. Bursty, Broadband Electromagnetic Waves Associated with Thin Current Layers and Turbulent Magnetosheath Reconnection

    Science.gov (United States)

    Adrian, M. L.; Wendel, D. E.

    2011-01-01

    We investigate observations of intense bursts of electromagnetic wave energy in association with the thin current layers of turbulent magnetosheath reconnection. These observed emissions form two distinct types: (i) broadband emissions that extend continuously to lOs of Hertz; and (ii) structured bursts of emitted energy that occur above 80-Hz, often displaying features reminiscent of absorption bands and are observed at local minima in the magnetic field. We present detailed analyses of these intense bursts of electromagnetic energy and quantify their proximity to X- and O-nulls, as well as their correlation to the amount of magnetic energy converted by the process of magnetic reconnection.

  9. Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

    International Nuclear Information System (INIS)

    Schroeder, Herbert

    2015-01-01

    In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F 1/2 ) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different

  10. Direct Reconstruction of Two-Dimensional Currents in Thin Films from Magnetic-Field Measurements

    Science.gov (United States)

    Meltzer, Alexander Y.; Levin, Eitan; Zeldov, Eli

    2017-12-01

    An accurate determination of microscopic transport and magnetization currents is of central importance for the study of the electric properties of low-dimensional materials and interfaces, of superconducting thin films, and of electronic devices. Current distribution is usually derived from the measurement of the perpendicular component of the magnetic field above the surface of the sample, followed by numerical inversion of the Biot-Savart law. The inversion is commonly obtained by deriving the current stream function g , which is then differentiated in order to obtain the current distribution. However, this two-step procedure requires filtering at each step and, as a result, oversmooths the solution. To avoid this oversmoothing, we develop a direct procedure for inversion of the magnetic field that avoids use of the stream function. This approach provides enhanced accuracy of current reconstruction over a wide range of noise levels. We further introduce a reflection procedure that allows for the reconstruction of currents that cross the boundaries of the measurement window. The effectiveness of our approach is demonstrated by several numerical examples.

  11. Effects of small magnetic fields on the critical current of thin films

    International Nuclear Information System (INIS)

    Passos, Wagner de Assis Cangussu; Lisboa-Filho, Paulo Noronha; Ortiz, Wilson Aires; Kang, W.N.; Choi, Eun-Mi; Hyeong-Jin, Kim; Lee, Sung-Ik Lee

    2002-01-01

    Full text: Magnetic fields applied perpendicularly to superconducting thin films may produce dendritic patterns, where penetrated and Meissner regions coexist, as observed in Nb, YBaCuO and MgB 2 [1]. A temperature-dependent limiting-field, Hd(T), separates the dendritic mode from a critical-state-like penetration regime. Due to large demagnetizing factors in the perpendicular geometry, small fields may be enough to drive portions of the sample into the mixed state. Lack of symmetry and local defects might then permeate the dendritic mode. Hd(T) is related[2] to the bulk lower critical field, Hc1, which depends on the in-plane current density, J. Not surprisingly, Hd is depressed by J[3]. The dendritic mode can be detected by the AC-susceptibility: penetrated fingers act as intergranular material, and the imaginary component peaks at Tc-inter(J). Films of 0.2-0.4 microns, with millimeter lateral sizes, develop dendrites when submitted to Earth's field[2], what limits the critical current, J c . This contribution studies how J c is affected by field-induced granularity in thin films. 1. C. A. Duran et al., PRB 52 (1995) 75; P. Leiderer et al., PRL. 71 (1993) 2646; T.H. Johansen et al., Supercond. Sci. Technol. 14 (2001) 1. 2. W. A. Ortiz et al., Physica C 361 (2001) 267. 3. A. V. Bobyl et al., cond-mat/0201260, submitted to APL

  12. Magneto-optic observation of anomalous Meissner current flow in superconducting thin films with slits

    International Nuclear Information System (INIS)

    Baziljevich, M.; Johansen, T.H.; Bratsberg, H.; Shen, Y.; Vase, P.

    1996-01-01

    Slits patterned into a YBa 2 Cu 3 O 7-δ thin film were observed to obstruct Meissner sheet currents leading to an imbalance in the local Meissner screening properties. The new phenomenon was studied with magneto-optic imaging where twin lobes of opposite flux polarity were seen to form near the slits and inside the Meissner region. The lobe closest to the sample edge is always polarized opposite to the applied field. At weak fields, the anomalous flux generation is reversible. At higher fields, but still sufficiently small to keep the vortex penetration front away from the slits, the anomalous current starts nucleating flux lines which become trapped when the field is removed. copyright 1996 American Institute of Physics

  13. Critical current density of MgB2 thin films and the effect of interface pinning

    International Nuclear Information System (INIS)

    Choi, Eun-Mi; Gupta, S K; Sen, Shashwati; Lee, Hyun-Sook; Kim, Hyun-Jung; Lee, Sung-Ik

    2004-01-01

    Preferentially oriented MgB 2 thin films with c-axis normal to the surface have been prepared and characterized for microstructure and transport properties. The magnetic field dependence of superconducting critical current density J c has been determined from the magnetization hysteresis (M-H) loops at various temperatures using the Bean's critical state model. High J c of these films show their potential for applications. We have also measured the angular dependences of J c . The angular dependence is seen to be in agreement with the anisotropic Ginzburg-Landau model except that at angles close to the ab plane, increased pinning due to film-substrate interaction is observed. The angular range where interface pinning is effective has been determined by measurement of asymmetry in dissipation on reversal of current for fields applied at angles close to the ab plane

  14. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    Science.gov (United States)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

    2009-11-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

  15. Mutual Inductance Problem for a System Consisting of a Current Sheet and a Thin Metal Plate

    Science.gov (United States)

    Fulton, J. P.; Wincheski, B.; Nath, S.; Namkung, M.

    1993-01-01

    Rapid inspection of aircraft structures for flaws is of vital importance to the commercial and defense aircraft industry. In particular, inspecting thin aluminum structures for flaws is the focus of a large scale R&D effort in the nondestructive evaluation (NDE) community. Traditional eddy current methods used today are effective, but require long inspection times. New electromagnetic techniques which monitor the normal component of the magnetic field above a sample due to a sheet of current as the excitation, seem to be promising. This paper is an attempt to understand and analyze the magnetic field distribution due to a current sheet above an aluminum test sample. A simple theoretical model, coupled with a two dimensional finite element model (FEM) and experimental data will be presented in the next few sections. A current sheet above a conducting sample generates eddy currents in the material, while a sensor above the current sheet or in between the two plates monitors the normal component of the magnetic field. A rivet or a surface flaw near a rivet in an aircraft aluminum skin will disturb the magnetic field, which is imaged by the sensor. Initial results showed a strong dependence of the flaw induced normal magnetic field strength on the thickness and conductivity of the current-sheet that could not be accounted for by skin depth attenuation alone. It was believed that the eddy current imaging method explained the dependence of the thickness and conductivity of the flaw induced normal magnetic field. Further investigation, suggested the complexity associated with the mutual inductance of the system needed to be studied. The next section gives an analytical model to better understand the phenomenon.

  16. Imaging of current distributions in superconducting thin film structures; Abbildung von Stromverteilungen in supraleitenden Duennfilmstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Doenitz, D.

    2006-10-31

    Local analysis plays an important role in many fields of scientific research. However, imaging methods are not very common in the investigation of superconductors. For more than 20 years, Low Temperature Scanning Electron Microscopy (LTSEM) has been successfully used at the University of Tuebingen for studying of condensed matter phenomena, especially of superconductivity. In this thesis LTSEM was used for imaging current distributions in different superconducting thin film structures: - Imaging of current distributions in Josephson junctions with ferromagnetic interlayer, also known as SIFS junctions, showed inhomogeneous current transport over the junctions which directly led to an improvement in the fabrication process. An investigation of improved samples showed a very homogeneous current distribution without any trace of magnetic domains. Either such domains were not present or too small for imaging with the LTSEM. - An investigation of Nb/YBCO zigzag Josephson junctions yielded important information on signal formation in the LTSEM both for Josephson junctions in the short and in the long limit. Using a reference junction our signal formation model could be verified, thus confirming earlier results on short zigzag junctions. These results, which could be reproduced in this work, support the theory of d-wave symmetry in the superconducting order parameter of YBCO. Furthermore, investigations of the quasiparticle tunneling in the zigzag junctions showed the existence of Andreev bound states, which is another indication of the d-wave symmetry in YBCO. - The LTSEM study of Hot Electron Bolometers (HEB) allowed the first successful imaging of a stable 'Hot Spot', a self-heating region in HEB structures. Moreover, the electron beam was used to induce an - otherwise unstable - hot spot. Both investigations yielded information on the homogeneity of the samples. - An entirely new method of imaging the current distribution in superconducting interference

  17. A self-powered thin-film radiation detector using intrinsic high-energy current

    Energy Technology Data Exchange (ETDEWEB)

    Zygmanski, Piotr, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Radiation Oncology, Brigham and Women’s Hospital, Dana-Farber Cancer Institute and Harvard Medical School, Boston, Massachusetts 02115 (United States); Sajo, Erno, E-mail: pzygmanski@LROC.HARVARD.EDU, E-mail: Erno-Sajo@uml.edu [Department of Physics and Applied Physics, Medical Physics Program, University of Massachusetts Lowell, Lowell, Massachusetts 01854 (United States)

    2016-01-15

    Purpose: The authors introduce a radiation detection method that relies on high-energy current (HEC) formed by secondary charged particles in the detector material, which induces conduction current in an external readout circuit. Direct energy conversion of the incident radiation powers the signal formation without the need for external bias voltage or amplification. The detector the authors consider is a thin-film multilayer device, composed of alternating disparate electrically conductive and insulating layers. The optimal design of HEC detectors consists of microscopic or nanoscopic structures. Methods: Theoretical and computational developments are presented to illustrate the salient properties of the HEC detector and to demonstrate its feasibility. In this work, the authors examine single-sandwiched and periodic layers of Cu and Al, and Au and Al, ranging in thickness from 100 nm to 300 μm and separated by similarly sized dielectric gaps, exposed to 120 kVp x-ray beam (half-value thickness of 4.1 mm of Al). The energy deposition characteristics and the high-energy current were determined using radiation transport computations. Results: The authors found that in a dual-layer configuration, the signal is in the measurable range. For a defined total detector thickness in a multilayer structure, the signal sharply increases with decreasing thickness of the high-Z conductive layers. This paper focuses on the computational results while a companion paper reports the experimental findings. Conclusions: Significant advantages of the device are that it does not require external power supply and amplification to create a measurable signal; it can be made in any size and geometry, including very thin (sub-millimeter to submicron) flexible curvilinear forms, and it is inexpensive. Potential applications include medical dosimetry (both in vivo and external), radiation protection, and other settings where one or more of the above qualities are desired.

  18. Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

    Science.gov (United States)

    Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

    2018-06-01

    Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

  19. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    International Nuclear Information System (INIS)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Jeong, Heejun; Song, Chulgi

    2009-01-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2 ) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO 2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm −1 ) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm −1 ). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV

  20. Low field critical currents and ac losses of thin film niobium--tin superconductors

    International Nuclear Information System (INIS)

    Howard, R.E.

    1977-01-01

    The results of a study of the low field critical current and ac loss properties of niobium-tin thin films and layered composites fabricated by electron-beam coevaporation are presented. Particular emphasis is placed upon determining the suitability of this material for use as a conductor in a superconducting power transmission line. Chapter I contains a summary of this work and its major results together with an introduction to the scientific and engineering concepts associated with a superconducting power transmission line. Chapter II is a discussion of the physics of current transport and the associated loss mechanisms in a type-II superconductor. Chapter III gives the details of the electron-beam coevaporation technique developed to fabricate the samples for this study. Also discussed in this chapter are the effects of the evaporation conditions on the growth morphology of the niobium-tin films. Chapter IV presents the details of the experimental techniques developed to measure the ac loss and critical current in these samples as a function of temperature. Chapter V shows the dependence of the critical current of these films and composites on temperature, magnetic field, and on the number of artificially introduced pinning centers in the layered composites. Experimental results are also presented concerning the stability of these conductors against flux jumps. Chapter VI is a discussion of the ac losses in these samples. Detailed comparisons are made between the measured loss and the predictions of the critical state model

  1. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  2. The effect of a thin silver layer on the critical current of epitaxial YBCO films

    International Nuclear Information System (INIS)

    Polturak, E.; Koren, G.; Cohen, D.; Cohen, D.; Snapiro, I.

    1992-01-01

    We compare measurements of the critical current density of an epitaxial YBCO film with that of an identical film overlaid by a thin silver layer. We find that the presence of the silver lowers Tc of the film by about 1.5 K, which is two orders of magnitude larger than predicted by the theory of the proximity effect for our experimental conditions. In addition, J c of the Ag/YBCO film near Tc is also significantly lower than that of the bare YBCO film. We propose two alternate interpretations of this effect, one in terms of destabilization of the flux distribution in the film and the other making use of the effect of the silver on the Bean-Livingston surface barrier for the initial penetration of flux. The latter seems the more plausible explanation of our results. (orig.)

  3. Short-circuit current improvement in thin cells with a gridded back contact

    Science.gov (United States)

    Giuliano, M.; Wohlgemuth, J.

    1980-01-01

    The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.

  4. Optical Properties and Electrochemical Performance of LiFePO4 Thin Films Deposited on Transparent Current Collectors.

    Science.gov (United States)

    Lee, HyunSeok; Yim, Haena; Kim, Kwang-Bum; Choi, Ji-Won

    2015-11-01

    LiFePO4 thin film cathodes are deposited on various transparent conducting oxide thin films on glass, which are used as cathode current collectors. The XRD patterns show that the thin films have the phase of LiFePO4 with an ordered olivine structure indexed to the orthorhombic Pmna space group. LiFePO4 thin film deposited on various TCO glass substrates exhibits transmittance of about 53%. The initial specific discharge capacities of LiFePO4 thin films are 25.0 μAh/cm2 x μm on FTO, 33.0 μAh/cm2 x μm on ITO, and 13.0 μAh/cm2 x μm on AZO coated glass substrates. Interestingly, the retention capacities of LiFePO4 thin films are 76.0% on FTO, 31.2% on ITO, and 37.7% on AZO coated glass substrates at 20th cycle. The initial specific discharge capacity of the LiFePO4/FTO electrode is slightly lower, but the discharge capacities of the LiFePO4/FTO electrode relatively decrease less than those of the others such as LiFePO4/ITO and LiFePO4/AZO with cycling. The results reported here provide the high transparency of LiFePO4 thin films cathode materials and the good candidate as FTO current collector of the LiFePO4 thin film cathode of transparent thin film rechargeable batteries due to its high transparency and cyclic retention.

  5. Investigation of the resistive transition of MgB2 thin film through current noise

    International Nuclear Information System (INIS)

    Gandini, C; Rajteri, M; Portesi, C; Monticone, E; Masoero, A; Mazzetti, P

    2006-01-01

    In this paper we present measurements concerning the current noise produced during the resistive transition in a MgB 2 polycrystalline thin film. The power spectrum of the current noise, observed when the temperature is slowly changed across its critical value, presents a large electrical noise of the 1/f n type (n ≅ 3) over a quite wide range of frequencies. This noise may be considered as generated by the abrupt creation of resistive strips across the specimen constituted by grains which have undergone the resistive transition. A computer model that takes into account fluctations of the grain critical currents and of the number of grain per strips, has been developed to simulate the resistive transition and to evaluate the noise power spectrum. When the temperature is incresed and reaches its critical value, resistive strips are formed according to a percolative process, giving rise to resistance steps which are at the origin of the noise. The theoretical results obtained by this model are in good agreement, concerning both the shape and intensity of the noise power spectrum, with the experimental data directly measured on the specimen

  6. Characteristics of AZO thin films prepared at various Al target input current deposited on PET substrate

    Science.gov (United States)

    Kim, Yun-Hae; Park, Chang-Wook; Lee, Jin-Woo; Lee, Dong Myung

    2015-03-01

    Transparent conductive oxide is a thin film to be used in numerous applications throughout the industry in general. Transparent electrode materials used in these industries are in need of light transmittance with excellent high and low electrical characteristics, substances showing the most excellent physical properties while satisfying all the characteristics such as indium tin oxide film. However, reserves of indium are very small, there is an environmental pollution problem. So the study of zinc oxide (ZnO) is actively carried out in an alternative material. This study analyzed the characteristics by using a direct current (DC) magnetron sputtering system. The electric and optical properties of these films were studied by Hall measurement and optical spectroscopy, respectively. When the Al target input current is 2 mA and 4 mA, it demonstrates about 80% transmittance in the range of the visible spectrum. Also, when Al target input current was 6 mA, sheet resistance was the smallest on PET substrate. The minimum resistivity is 3.96×10-3 ohm/sq.

  7. Modelling geomagnetically induced currents in midlatitude Central Europe using a thin-sheet approach

    Science.gov (United States)

    Bailey, Rachel L.; Halbedl, Thomas S.; Schattauer, Ingrid; Römer, Alexander; Achleitner, Georg; Beggan, Ciaran D.; Wesztergom, Viktor; Egli, Ramon; Leonhardt, Roman

    2017-06-01

    Geomagnetically induced currents (GICs) in power systems, which can lead to transformer damage over the short and the long term, are a result of space weather events and geomagnetic variations. For a long time, only high-latitude areas were considered to be at risk from these currents, but recent studies show that considerable GICs also appear in midlatitude and equatorial countries. In this paper, we present initial results from a GIC model using a thin-sheet approach with detailed surface and subsurface conductivity models to compute the induced geoelectric field. The results are compared to measurements of direct currents in a transformer neutral and show very good agreement for short-period variations such as geomagnetic storms. Long-period signals such as quiet-day diurnal variations are not represented accurately, and we examine the cause of this misfit. The modelling of GICs from regionally varying geoelectric fields is discussed and shown to be an important factor contributing to overall model accuracy. We demonstrate that the Austrian power grid is susceptible to large GICs in the range of tens of amperes, particularly from strong geomagnetic variations in the east-west direction.

  8. The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Zhang, Ping [Tianjin University, School of Electrical and Information Engineering, Tianjin (China); Lan, Kuibo [Tianjin University, School of Microelectronics, Tianjin (China)

    2017-07-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films with different preferred orientation were prepared on platinized silicon substrates by a modified sol-gel method. Our results indicate that the polarization switching current in PZT thin films is dependent on preferred orientation and poling temperature. In our measurements, (111)-oriented PZT has a larger polarization switching current than randomly oriented PZT, and with the increase of the degree of (111) preferred orientation and the poling temperature, the polarization switching current gradually increase. Considering the contact of PZT thin film with electrodes, the space-charged limited conduction (SCLC) combined with domain switching mechanism may be responsible for such phenomena. By analyzing the conduction data, we found the interface-limited Schottky emission (ES) and bulk-limited Poole-Frenkel hopping (PF) are not suitable for our samples. (orig.)

  9. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  10. Stabilization of the dissipation-free current transport in inhomogeneous MgB2 thin films

    International Nuclear Information System (INIS)

    Treiber, S.; Stahl, C.; Schütz, G.; Soltan, S.; Albrecht, J.

    2014-01-01

    Highlights: • We investigate transport properties of inhomogeneous MgB 2 films. • An inhomogeneous microstructure stabilizes supercurrents. • Vortex pinning forces and energies have been analyzed experimentally. • In inhomogeneous films the increase of the pinning energy is responsible for stable supercurrents. - Abstract: In type-II superconductors at T = 0 the critical current density is determined by the pinning of flux lines. Considering an arbitrarily shaped energy landscape the pinning force at each pinning site is given by the derivative of the flux line energy with respect to the considered direction. At finite temperatures, in addition, thermal activation can lead to a depinning of flux lines. The governing property in this case is the depth of the corresponding pinning potential, i.e. the pinning energy. We show a detailed analysis of both pinning forces and pinning energies of MgB 2 films with inhomogeneous microstructure. We show that a pronounced increase of the pinning energy is responsible for the significantly enhanced stability of the dissipation-free current transport in thin inhomogeneous MgB 2 films. This is found even if the corresponding pinning forces are small

  11. A Drain Current Model Based on the Temperature Effect of a-Si:H Thin-Film Transistors

    International Nuclear Information System (INIS)

    Qiang Lei; Yao Ruo-He

    2012-01-01

    Based on the differential Ohm's law and Poisson's equation, an analytical model of the drain current for a-Si:H thin-film transistors is developed. This model is proposed to elaborate the temperature effect on the drain current, which indicates that the drain current is linear with temperature in the range of 290-360 K, and the results fit well with the experimental data

  12. Parameters affecting profile shape of a high energy low current thin ion beam. Vol. 2

    Energy Technology Data Exchange (ETDEWEB)

    Abdel Salam, F W; Moustafa, O A; El-Khabeary, H [Accelerators Department, Nuclear Research Center, Atomic Energy Authority, Cairo, (Egypt)

    1996-03-01

    The shape of the profile of a high energy, low current beam of finite length has beam investigated. The beam profile shape depends on the initial beam radius, beam perveance, atomic mass number, charge state of ions, and beam length. These parameters can affect the relation between the initial beam radius and the corresponding final one. An optimum initial beam radius corresponding to minimum final beam at the target has been formulated and the relation between them is deduced taking account of the space charge effect. The minimum beam radius at the target was found to be equal to 2.3 of the optimum initial radius. It is concluded that in order to obtain a small beam radius at a target placed at a finite distance from an ion source, a beam of a low perveance, low atomic mass number and high number of electronic charge is required. This is an important detection for micro machining applications using the oscillating electron ion source which produces nearly paraxial thin beam of low perveance. 12 figs.

  13. Influences of arc current on composition and properties of MgO thin films prepared by cathodic vacuum arc deposition

    International Nuclear Information System (INIS)

    Zhu Daoyun; Zheng Changxi; Wang Mingdong; Liu Yi; Chen Dihu; He Zhenhui; Wen Lishi; Cheung, W.Y.

    2010-01-01

    MgO thin films with high optical transmittances (more than 90%) were prepared by cathodic vacuum arc deposition technique. With the increase of arc current from 40 to 80 A, the deposition pressure decreases and the film thickness increases; the atomic ratio of Mg/O in MgO thin films (obtained by RBS) increases from 0.97 to 1.17, giving that deposited at 50 A most close to the stoichiometric composition of the bulk MgO; the grains of MgO thin films grow gradually as shown in SEM images. XRD patterns show that MgO (1 1 0) orientation is predominant for films prepared at the arc currents ranged from 50 to 70 A. The MgO (1 0 0) orientation is much enhanced and comparable to that of MgO (1 1 0) for films prepared at the arc current of 80 A. The secondary electron emission coefficient of MgO thin film increases with arc current ranged from 50 to 70 A.

  14. Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication

    International Nuclear Information System (INIS)

    Jun, Seung-Ik; Rack, Philip D.; McKnight, Timothy E.; Melechko, Anatoli V.; Simpson, Michael L.

    2005-01-01

    The effect that direct current (dc) substrate bias has on radio frequency-sputter-deposited amorphous silicon (a-Si) films has been investigated. The substrate bias produces a denser a-Si film with fewer defects compared to unbiased films. The reduced number of defects results in a higher resistivity because defect-mediated conduction paths are reduced. Thin film transistors (TFTs) that were completely sputter deposited were fabricated and characterized. The TFT with the biased a-Si film showed lower leakage (off-state) current, higher on/off current ratio, and higher transconductance (field effect mobility) than the TFT with the unbiased a-Si film

  15. Current flow in a 3-terminal thin film contact with dissimilar materials and general geometric aspect ratios

    International Nuclear Information System (INIS)

    Zhang Peng; Hung, Derek M H; Lau, Y Y

    2013-01-01

    The current flow pattern, together with the contact resistance, is calculated analytically in a Cartesian 3-terminal thin film contact with dissimilar materials. The resistivities and the geometric dimensions in the individual contact members, as well as the terminal voltages, may assume arbitrary values. We show that the current flow patterns and the contact resistance may be conveniently decomposed into the even and odd solution. The even solution gives exclusively and totally the current flowing from the source to the gate. The odd solution gives exclusively and totally the current flowing from the source to the drain. Current crowding at the edges, and current partition in different regions are displayed. The analytic solutions are validated using a simulation code. The bounds on the variation of the contact resistance are given. This paper may be considered as the generalization of the transmission line model and the Kennedy-Murley model that were used extensively in the characterization of thin-film devices. For completeness, we include the general results for the cylindrical geometry, which are qualitatively similar to the even solution of the Cartesian geometry.

  16. Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

    Science.gov (United States)

    Noda, Kei; Wakatsuki, Yusuke; Yamagishi, Yuji; Wada, Yasuo; Toyabe, Toru; Matsushige, Kazumi

    2013-02-01

    The current enhancement mechanism in contact-area-limited doping for bottom-gate, bottom-contact (BGBC) p-channel organic thin-film transistors (OTFTs) was investigated both by simulation and experiment. Simulation results suggest that carrier shortage and large potential drop occur in the source-electrode/channel interface region in a conventional BGBC OTFT during operation, which results in a decrease in the effective field-effect mobility. These phenomena are attributed to the low carrier concentration of active semiconductor layers in OTFTs and can be alleviated by contact-area-limited doping, where highly doped layers are prepared over source-drain electrodes. According to two-dimensional current distribution obtained from the device simulation, a current flow from the source electrode to the channel region via highly doped layers is generated in addition to the direct carrier injection from the source electrode to the channel, leading to the enhancement of the drain current and effective field-effect mobility. The expected current enhancement mechanism in contact-area-limited doping was experimentally confirmed in typical α-sexithiophene (α-6T) BGBC thin-film transistors.

  17. Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

    International Nuclear Information System (INIS)

    Wu, Haoran; Susanto, Amelia; Lian, Keryn

    2017-01-01

    Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

  18. Thin and flexible Ni-P based current collectors developed by electroless deposition for energy storage devices

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Haoran, E-mail: haoran.wu@mail.utoronto.ca; Susanto, Amelia; Lian, Keryn

    2017-02-01

    Highlights: • A PET metallized by electroless nickel was developed as flexible current collector. • The Ni-PET current collector showed good conductivity and chemical stability. • The flexible nanocarbon electrodes with Ni-PET exhibited capacitive behavior. • The Ni-PET enabled electrodes performed nicely in liquid and solid supercapacitors. - Abstract: A PET film metalized by electroless nickel deposition was demonstrated as thin and flexible current collector for energy storage devices. The resultant nickel-on-PET film (Ni-PET) can be used both as current collector for electrochemical capacitors and as electrode for thin film batteries. The composition of Ni-PET was characterized by EDX and XPS. The electrochemical performance of the Ni-PET current collector was similar to Ni foil but with less hydrogen evolution at low potential. The Ni-PET film exhibited better flexibility than a metallic Ni foil. Carbon nanotubes were coated on a Ni-PET substrate to form an electrochemical capacitor electrode which exhibited high chemical stability in both liquid and solid electrolytes, showing strong promise for solid energy storage devices.

  19. Differential Hall-sensor Pulsed Eddy Current Probe for the Detection of Wall thinning in an Insulated Stainless Steel Pipe

    International Nuclear Information System (INIS)

    Park, D. G.; Angani, Chandra S.; Cheong, Y. M.; Kim, C. G.

    2010-01-01

    The local wall thinning is one of the most important factors to limit the life-extension of large structures, such as the pipe lines in the NPPs. The pipelines are covered with a thermal insulator for low thermal loss. The PEC testing is the promising technological approach to the NDT, and it has been principally developed for the measurement of surface flaws, subsurface flaws and corrosion. In the pulsed eddy current (PEC) technique, the excitation coil is driven by repeated pulses. According to the skin - depth relationship multiple frequency components penetrate to different depths, hence the PEC technique has the potential for bringing up deeper information about the tested sample. Because of the potential advantages of the PEC, prevalent investigations on this technique have been done. In the present study a differential probe which is used in the Pulsed Eddy Current (PEC) system has been fabricated for the detection of wall thinning of insulated pipelines in a nuclear power plant (NPP). This technique can be used as a potential tool to detect the corrosion or the wall thinning of the pipelines without removing the insulation

  20. Photosensitive space charge limited current in screen printed CdTe thin films

    Science.gov (United States)

    Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

    2018-05-01

    Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

  1. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  2. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  3. Bidirectional current triggering in planar devices based on serially connected VO2 thin films using 965 nm laser diode.

    Science.gov (United States)

    Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

    2016-08-08

    By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO2) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO2. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

  4. Current-limiting mechanisms in YBa2Cu3O7-δ thin layers and quasi-multilayers

    International Nuclear Information System (INIS)

    Haenisch, J.

    2004-01-01

    In this work, electrical transport properties and the maximum current carrying capability of YBa 2 Cu 3 O 7 -[δ] thin films and so called quasi-multilayers are investigated. These samples are prepared with pulsed laser deposition on single-crystalline substrates (SrTiO 3 ) as well as on biaxially textured Ni tapes. The critical current density of coated conductors is limited by small-angle grain boundaries in low magnetic fields, but by the intra-grain pinning properties in higher magnetic fields. Accordingly, these investigations are divided into two parts: In the first part, the limitation of the critical current density by grain-boundaries and grain boundary networks is investigated with the main focus on the influence of geometrical factors such as the conductor width or the grain aspect ratio. In the second part, a possible enhancement of the critical current density due to different doping types (atomar doping using Zn and precipitate doping using BaMO 3 where M is a transition metal) will be discussed. Here, not only the irreversibility field but also the pinning behaviour in very low magnetic fields is of interest to better understand the pinning mechanism of thin films. (Orig.)

  5. Critical temperature gradient and critical current density in thin films of a type I superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Heubener, R P

    1968-12-16

    Measurements of the critical temperature gradient and the critical current density in superconducting lead films in a transverse magnetic field indicate that the critical current flows predominantly along the surface of the films and that the critical surface currents contribute only very little to the Lorentz force on a fluxoid.

  6. Kinetic instabilities of thin current sheets: Results of two-and-one-half-dimensional Vlasov code simulations

    International Nuclear Information System (INIS)

    Silin, I.; Buechner, J.

    2003-01-01

    Nonlinear triggering of the instability of thin current sheets is investigated by two-and-one-half- dimensional Vlasov code simulations. A global drift-resonant instability (DRI) is found, which results from the lower-hybrid-drift waves penetrating from the current sheet edges to the center where they resonantly interact with unmagnetized ions. This resonant nonlinear instability grows faster than a Kelvin-Helmholtz instability obtained in previous studies. The DRI is either asymmetric or symmetric mode or a combination of the two, depending on the relative phase of the lower-hybrid-drift waves at the edges of the current sheet. With increasing particle mass ratio the wavenumber of the fastest-growing mode increases as kL z ∼(m i /m e ) 1/2 /2 and the growth rate of the DRI saturates at a finite level

  7. A standardized procedure for eddy-current testing of stainless steel, thin-walled nuclear fuel element cladding tubes

    International Nuclear Information System (INIS)

    Barat, P.; Raj, B.; Bhattacharya, D.K.

    1982-01-01

    Thin-walled nuclear fuel cladding tubes made of AISI 316 stainless steel have been examined by eddy-current testing. Standardization of the procedures has required investigations on optimizing the test frequency, finding a method to locate a defect with respect to the probe reference end, and the use of standard defects and sequential metallography of natural defects detected by eddy-current testing, to understand the influence of the nature of defects on the impedance output signals. Test frequency and method of locating the defect were optimized by the use of standard defects made by machining in reference cladding tubes. Subsequent metallography of natural defects detected by eddy-current testing revealed mainly clusters of inclusions but also other types of defects. The effect of the distribution of inclusions along the length of the tube on the impedance output is discussed. (author)

  8. Standardized procedure for eddy-current testing of stainless steel, thin-walled nuclear fuel element cladding tubes

    Energy Technology Data Exchange (ETDEWEB)

    Barat, P; Raj, B; Bhattacharya, D K [Reactor Research Centre, Kalpakkam (India)

    1982-10-01

    Thin-walled nuclear fuel cladding tubes made of AISI 316 stainless steel have been examined by eddy-current testing. Standardization of the procedures has required investigations on optimizing the test frequency, finding a method to locate a defect with respect to the probe reference end, and the use of standard defects and sequential metallography of natural defects detected by eddy-current testing, to understand the influence of the nature of defects on the impedance output signals. Test frequency and method of locating the defect were optimized by the use of standard defects made by machining in reference cladding tubes. Subsequent metallography of natural defects detected by eddy-current testing revealed mainly clusters of inclusions but also other types of defects. The effect of the distribution of inclusions along the length of the tube on the impedance output is discussed.

  9. Depairing critical current achieved in superconducting thin films with through-thickness arrays of artificial pinning centers

    International Nuclear Information System (INIS)

    Dinner, Rafael B; Wimbush, Stuart C; MacManus-Driscoll, Judith L; Blamire, Mark G; Robinson, Adam P

    2011-01-01

    Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, J c , of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, J c values approaching and in some cases matching the Ginzburg-Landau depairing current of 30 MA cm -2 at 5 K have been achieved-a J c enhancement over as-deposited films of more than 50 times. In the field dependence of J c , a matching field corresponding to the areal pore density has also been clearly observed. The effect of backfilling the pores with magnetic material has then been investigated. While backfilling with Co has been successfully achieved, the effect of the magnetic material on J c has been found to be largely detrimental compared to voids, although a distinct influence of the magnetic material in producing a hysteretic J c versus applied field behavior has been observed. This behavior has been tested for compatibility with currently proposed models of magnetic pinning and found to be most closely explained by a model describing the magnetic attraction between the flux vortices and the magnetic inclusions.

  10. The Impact of Graphene on the Fabrication of Thin Film Solar Cells: Current Status and Future Prospects

    Directory of Open Access Journals (Sweden)

    Zhengqi Shi

    2017-12-01

    Full Text Available Commercial solar cells have a power conversion efficiency (PCE in the range of 10–22% with different light absorbers. Graphene, with demonstrated unique structural, physical, and electrical properties, is expected to bring the positive effects on the development of thin film solar cells. Investigations have been carried out to understand whether graphene can be used as a front and back contacts and active interfacial layer in solar cell fabrication. In this review, the current progress of this research is analyzed, starting from the graphene and graphene-based Schottky diode. Also, the discussion was focused on the progress of graphene-incorporated thin film solar cells that were fabricated with different light absorbers, in particular, the synthesis, fabrication, and characterization of devices. The effect of doping and layer thickness of graphene on PCE was also included. Currently, the PCE of graphene-incorporated bulk-heterojunction devices have enhanced in the range of 0.5–3%. However, device durability and cost-effectiveness are also the challenging factors for commercial production of graphene-incorporated solar cells. In addition to the application of graphene, graphene oxides have been also used in perovskite solar cells. The current needs and likely future investigations for graphene-incorporated solar cells are also discussed.

  11. Capacitor Property and Leakage Current Mechanism of ZrO2 Thin Dielectric Films Prepared by Anodic Oxidation

    Science.gov (United States)

    Kamijyo, Masahiro; Onozuka, Tomotake; Shinkai, Satoko; Sasaki, Katsutaka; Yamane, Misao; Abe, Yoshio

    2003-07-01

    Polycrystalline ZrO2 thin film capacitors were prepared by anodizing sputter-deposited Zr films. Electrical measurements are performed for the parallel-plate anodized capacitors with an Al-ZrO2-Zr (metal-insulator-metal) structure, and a high capacitance density (0.6 μF/cm2) and a low dielectric loss of nearly 1% are obtained for a very thin-oxide capacitor anodized at 10 V. In addition, the leakage current density of this capacitor is about 1.8 × 10-8 A/cm2 at an applied voltage of 5 V. However, the leakage current is somewhat larger than that of a low-loss HfO2 capacitor. The leakage current density (J) of ZrO2 capacitors as a function of applied electric field (E) was investigated for several capacitors with different oxide thicknesses, by plotting \\ln(J) vs E1/2 curves. As a result, it is revealed that the conduction mechanism is due to the Poole-Frenkel effect, irrespective of the oxide thickness.

  12. Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

    International Nuclear Information System (INIS)

    Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

    2005-01-01

    As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

  13. Direct current modulation of spin-Hall-induced spin torque ferromagnetic resonance in platinum/permalloy bilayer thin films

    Science.gov (United States)

    Hirayama, Shigeyuki; Mitani, Seiji; Otani, YoshiChika; Kasai, Shinya

    2018-06-01

    We examined the spin-Hall-induced spin torque ferromagnetic resonance (ST-FMR) in platinum/permalloy bilayer thin films under bias direct current (DC). The bias DC modulated the symmetric components of the ST-FMR spectra, while no dominant modulation was found in the antisymmetric components. A detailed analysis in combination with simple model calculations clarified that the major origin of the modulation can be attributed to the DC resistance change under the precessional motion of magnetization. This effect is the second order contribution for the precession angle, even though the contribution can be comparable to the rectification voltage under some specific conditions.

  14. Suppression of photo-leakage current in amorphous silicon thin-film transistors by n-doped nanocrystalline silicon

    International Nuclear Information System (INIS)

    Lin, Hung-Chien; Ho, King-Yuan; Hsu, Chih-Chieh; Yan, Jing-Yi; Ho, Jia-Chong

    2011-01-01

    The reduction of photo-leakage current of amorphous silicon thin-film transistors (a-Si TFTs) is investigated and is found to be successfully suppressed by the use of an n-doped nanocrystalline silicon layer (n+ nc-Si) as an ohmic contact layer. The shallow-level defects of n+ nc-Si can become trapping centres of photo-induced electrons as the a-Si TFT is operated under light illumination. A lower oxygen concentration during n+ nc-Si deposition can increase the creation of shallow-level defects and improve the contrast ratio of active matrix organic light-emitting diode panels.

  15. Modelling secondary instability of co-current a thin gas-sheared film

    Energy Technology Data Exchange (ETDEWEB)

    Vozhakov, I S; Cherdantsev, A V; Arkhipov, D G, E-mail: vozhakov@gmail.com [Kutateladze Institute of Thermophysics, Novosibirsk (Russian Federation)

    2016-12-15

    Recent experimental works found the existence of two types of waves on the surface of gas-sheared thin films. Slower short-living ‘secondary waves’ appear due to the instability of the rear slopes of faster long-living ‘primary waves’. In this paper, modelling of spatiotemporal evolution of liquid film in such kind of flows is performed using relatively simple theoretical models. The modelling results are directly compared with the experimental data. It is found that the phenomenon of secondary waves generation at the rear slopes of the primary waves is reproduced by the model. This allows us to reduce the number of hypotheses which explain the mechanism responsible for such instability. Recommendations for future theoretical investigations are proposed. (paper)

  16. Modelling secondary instability of co-current a thin gas-sheared film

    International Nuclear Information System (INIS)

    Vozhakov, I S; Cherdantsev, A V; Arkhipov, D G

    2016-01-01

    Recent experimental works found the existence of two types of waves on the surface of gas-sheared thin films. Slower short-living ‘secondary waves’ appear due to the instability of the rear slopes of faster long-living ‘primary waves’. In this paper, modelling of spatiotemporal evolution of liquid film in such kind of flows is performed using relatively simple theoretical models. The modelling results are directly compared with the experimental data. It is found that the phenomenon of secondary waves generation at the rear slopes of the primary waves is reproduced by the model. This allows us to reduce the number of hypotheses which explain the mechanism responsible for such instability. Recommendations for future theoretical investigations are proposed. (paper)

  17. Current distribution and ac susceptibility response of a thin superconducting disc in an axial field: a theoretical approach

    Science.gov (United States)

    Aruna, S. A.; Zhang, P.; Lin, F. Y.; Ding, S. Y.; Yao, X. X.

    2000-04-01

    Within the framework of the thermally activated process of the flux line or flux line bundles, and by time integration of the 1D equation of motion of the circulating current density icons/Journals/Common/vecJ" ALT="vecJ" ALIGN="TOP"/> (icons/Journals/Common/rho" ALT="rho" ALIGN="TOP"/> ,t ), which is suitable for thin superconducting films (R >>d ,icons/Journals/Common/le" ALT="le" ALIGN="TOP"/> icons/Journals/Common/lambda" ALT="lambda" ALIGN="TOP"/> ), we present numerical calculations of the current profiles, magnetization hysteresis loops and ac susceptibility icons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> n = icons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> ´n +iicons/Journals/Common/chi" ALT="chi" ALIGN="TOP"/> ´´n for n = 1, 3 and 5 of a thin disc immersed in an axial time-dependent external magnetic field Ba (t ) = Bdc +Bac cos(2icons/Journals/Common/pi" ALT="pi" ALIGN="TOP"/> icons/Journals/Common/nu" ALT="nu" ALIGN="TOP"/> t ). Our calculated results are compared with those of the critical state model (CSM) and found to prove the approximate validity of the CSM below the irreversibility field. The differences between our computed results and those of the CSM are also discussed.

  18. Substrate decoration for improvement of current-carrying capabilities of YBa2Cu3Ox thin films

    International Nuclear Information System (INIS)

    Khoryushin, Alexey V.; Mozhaev, Peter B.; Mozhaeva, Julia E.; Bdikin, Igor K.; Zhao, Yue; Andersen, Niels H.; Jacobsen, Claus S.; Hansen, Jørn Bindslev

    2013-01-01

    Highlights: ► Effects of substrate decoration on properties of YBCO thin films were studied. ► Y 2 O 3 nanoparticles, ultra-thin Y 2 O 3 and Y:ZrO 2 layers were used as decoration layer. ► Decoration improves j C (5 T and 50 K) up to 0.97 MA/cm 2 vs. 0.76 MA/cm 2 for a reference film. ► Ultra-thin layer of yttria and yttria nanoparticles have a similar effect on YBCO. ► Y 2 O 3 decoration results in power law coefficient α = 0.3 vs. α = 0.4 for a reference film. -- Abstract: The effects of substrate decoration with yttria and Y:ZrO 2 on the structural and electrical properties of the YBa 2 Cu 3 O x (YBCO) thin films are studied. The films were deposited on (LaAlO 3 ) 3 –(Sr 2 AlTaO 8 ) 7 substrates by pulsed laser deposition. Two different structures of decoration layer were applied, a template layer of nanoparticles and an uniform ultra-thin layer. Significant improvement of current-carrying capabilities was observed, especially at high external magnetic fields. Structural studies of these films reveal the presence of extended linear defects in the YBCO matrix. The formation of these structures is attributed to seeding of randomly oriented YBCO grains due to suppression of epitaxy in the very beginning of the deposition. The films of both kinds of decoration layers show nearly the same improvement of j C over the reference film at 77 and 50 K: j C (5T and 50 K) reaches 0.92 and 0.97 MA/cm 2 for uniform and template decoration layers. At 5 and 20 K the effect of template decoration layers is more beneficial: j C (5T and 20 K) values are 3.5 and 4.1 MA/cm 2 , j C (5T and 5 K) values are 6.4 and 7.9 MA/cm 2 , for uniform and template decoration layers, respectively

  19. Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

    Science.gov (United States)

    Singh, Subhash; Mohapatra, Y. N.

    2017-06-01

    We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

  20. A built-in current sensor using thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Hatzopoulos, A A [Department of Electrical and Computer Eng., Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Siskos, S [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Dimitriadis, C A [Department of Physics, Microelectronic device characterization and design Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Papadopoulos, N [Department of Electrical and Computer Eng., Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Pappas, I [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Nalpantidis, L [Department of Physics, Electronics Lab., Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2005-01-01

    A simple current mirror using TFTs with input terminals which are capacitively coupled to the TFT gate, is used in this work, to design a built-in current sensor (BICS). The important feature in this application is that the voltage drop across the sensing TFT device can be reduced to almost zero value, while preserving transistor operation in the saturation region. This makes the proposed BICS appropriate for TFT applications without affecting the circuit operation. It also results in adequate linearity for the current monitoring, making the structure applicable to digital as well as to analog and mixed-signal circuit testing.

  1. Preparation and characterization of high-Tc superconducting thin films with high critical current densities

    International Nuclear Information System (INIS)

    Vase, P.

    1991-08-01

    The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

  2. Magnetic Field Dependence of the Critical Current in S-N Bilayer Thin Films

    Science.gov (United States)

    Sadleir, John E.; Lee, Sang-Jun; Smith, Stephen James; Bandler, Simon; Chervenak, James; Kilbourne, Caroline A.; Finkbeiner, Fred M.; Porter, Frederick S.; Kelley, Richard L.; Adams, Joseph S.; hide

    2013-01-01

    Here we investigate the effects a non-uniform applied magnetic field has on superconducting transition-edge sensors (TESs) critical current. This has implications on TES optimization. It has been shown that TESs resistive transition can be altered by magnetic fields. We have observed critical current rectification effects and explained these effects in terms of a magnetic self-field arising from asymmetric current injection into the sensor. Our TES physical model shows that this magnetic self-field can result in significantly degraded or improved TES performance. In order for this magnetically tuned TES strategy to reach its full potential we are investigating the effect a non-uniform applied magnetic field has on the critical current.

  3. A new approach to the inverse problem for current mapping in thin-film superconductors

    Science.gov (United States)

    Zuber, J. W.; Wells, F. S.; Fedoseev, S. A.; Johansen, T. H.; Rosenfeld, A. B.; Pan, A. V.

    2018-03-01

    A novel mathematical approach has been developed to complete the inversion of the Biot-Savart law in one- and two-dimensional cases from measurements of the perpendicular component of the magnetic field using the well-developed Magneto-Optical Imaging technique. Our approach, especially in the 2D case, is provided in great detail to allow a straightforward implementation as opposed to those found in the literature. Our new approach also refines our previous results for the 1D case [Johansen et al., Phys. Rev. B 54, 16264 (1996)], and streamlines the method developed by Jooss et al. [Physica C 299, 215 (1998)] deemed as the most accurate if compared to that of Roth et al. [J. Appl. Phys. 65, 361 (1989)]. We also verify and streamline the iterative technique, which was developed following Laviano et al. [Supercond. Sci. Technol. 16, 71 (2002)] to account for in-plane magnetic fields caused by the bending of the applied magnetic field due to the demagnetising effect. After testing on magneto-optical images of a high quality YBa2Cu3O7 superconducting thin film, we show that the procedure employed is effective.

  4. Transient current induced in thin film diamonds by swift heavy ions

    International Nuclear Information System (INIS)

    Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; Kamiya, Tomihiro; Kada, Wataru

    2017-01-01

    Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5+ and 45 MeV Si 7+ ) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.

  5. Effect of coating current density on the wettability of electrodeposited copper thin film on aluminum substrate

    Directory of Open Access Journals (Sweden)

    Arun Augustin

    2016-09-01

    Full Text Available Copper is the only one solid metal registered by the US Environmental Protection Agency as an antimicrobial touch surface. In touch surface applications, wettability of the surface has high significance. The killing rate of the harmful microbes depends on the wetting of pathogenic solution. Compared to the bulk copper, coated one on aluminum has the advantage of economic competitiveness and the possibility of manufacturing complex shapes. In the present work, the copper coating on the aluminum surface has successfully carried out by electrodeposition using non cyanide alkaline bath. To ensure good adhesion strength, the substrate has been pre-zincated prior to copper deposition. The coating current density is one of the important parameters which determine the nucleation density of the copper on the substrate. To understand the effect of current density on wettability, the coating has done at different current densities in the range of 3 A dm−2 to 9 A dm−2 for fixed time interval. The grain size has been measured from TEM micrographs and showed that as current density increases, grain size reduces from 62 nm to 35 nm. Since the grain size reduces, grain boundary volume has increases. As a result the value of strain energy (calculated by Williamson–Hall method has increased. The density of nodular morphology observed in SEM analysis has been increased with coating current density. Further, wettability studies with respect to double distilled water on the electrodeposited copper coatings which are coated at different current densities are carried out. At higher current density the coating is more wettable by water because at these conditions grain size of the coating decreases and morphology of grain changes to a favorable dense nodularity.

  6. Leakage current behavior in lead-free ferroelectric (K,Na)NbO3-LiTaO3-LiSbO3 thin films

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2010-12-01

    Conduction mechanisms in epitaxial (001)-oriented pure and 1 mol % Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.1,Sb0.06)O3 (KNN-LT-LS) thin films on SrTiO3 substrate were investigated. Temperature dependence of leakage current density was measured as a function of applied electric field in the range of 200-380 K. It was shown that the different transport mechanisms dominate in pure and Mn-doped thin films. In pure (KNN-LT-LS) thin films, Poole-Frenkel emission was found to be responsible for the leakage, while Schottky emission was the dominant mechanism in Mn-doped thin films at higher electric fields. This is a remarkable yet clear indication of effect of 1 mol % Mn on the resistive behavior of such thin films.

  7. Space charge limited current conduction in Bi2Te3 thin films

    International Nuclear Information System (INIS)

    Sathyamoorthy, R.; Dheepa, J.; Velumani, S.

    2007-01-01

    Bi 2 Te 3 is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi 2 Te 3 thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10 -5 m bar on clean glass substrates at room temperature. An Al-Bi 2 Te 3 -Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V t ), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V t on t 2 and log J on log t. The hole concentration in the films were found to be n 0 = 1.65 * 10 10 m -3 . The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V t is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV

  8. Detection of current-induced vacancies in thin aluminum endash copper lines using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; OBrien, K.; Lynn, K.G.; Simpson, P.J.; Rodbell, K.P.

    1996-01-01

    In situ depth-resolved positron annihilation spectroscopy (PAS) is used to show dynamic formation of vacancies in 1 μmx1 μm Al-0.5 wt% Cu lines under current flow. We show that the number of vacancies in these lines increases when a dc current (8x10 4 A/cm 2 ) is applied. This increase in vacancy concentration is substantially greater than that due to thermal vacancy generation alone (4x10 18 cm -3 versus 3x10 17 cm -3 ). Isothermal measurements (with no current flow) yield a vacancy formation energy of 0.60±0.02 eV. These results show that PAS can be used to examine the initial stages of interconnect damage due to electromigration. copyright 1996 American Institute of Physics

  9. Magnetic field dependence of the current flowing in the spin-coated chlorophyll thin films

    Science.gov (United States)

    Aji, J. R. P.; Kusumandari; Purnama, B.

    2018-03-01

    The magnetic dependence of the current flowing in the spin coated chlorophyll films on a patterned Cu PCB substrate has been presented. Chlorophyll was isolated from Spirulina sp and deposited by spin coated methods. The reducing of current by the change of magnetic field (magneto conductance effect) was performed by inducing the magnetic field parallel to the inplane of film at room temp. The magnetoconductance ratio decreases as the increase of voltage. It was indicated that the origin of carrier charge in chlorophyll films should be different with the carrier charge injection (electron).

  10. Nanosecond Characterization of Regional Domain Imprint from Fast Domain Switching Currents in Pb(Zr,Ti)O_3 Thin Films

    International Nuclear Information System (INIS)

    Jun Jiang; An-Quan Jiang

    2016-01-01

    The traditional imprint characterization of ferroelectric thin films estimates imprint time dependence of the mean coercive voltage of all domains from a polarization-voltage hysteresis loop, which shows a semilogarithmic time dependence above an initial imprint time of τ_0 > 1 μs at room temperature. Below τ_0, the imprint effect is believed to be weak. In consideration of region-by-region domain reversal under a rising pulsed voltage with ordered coercive voltages increasing from zero up to the maximum applied voltage during capacitor charging time, we can estimate the imprinted coercive voltage of each domain from domain switching current transient separately with imprint time as short as 20 ns. In disagreement with the previous observations, all imprinted coercive voltages for the domains in Pt/Pb(Zr_0_._4Ti_0_._6)O_3/Pt thin-film capacitors show step-like increases at two characteristic times of 300 ns and 0.27s. The imprint effect is surprisingly strong enough even at shortened time down to 20 ns without any evidence of weakening. (paper)

  11. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  12. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  13. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  14. The impedance of inductive superconducting fault current limiters operating with stacks of thin film Y123/Au washers or bulk Bi2223 rings as secondaries

    International Nuclear Information System (INIS)

    Fernandez, J A Lorenzo; Osorio, M R; Toimil, P; Ferro, G; Blanch, M; Veira, J A; Vidal, F

    2006-01-01

    Inductive fault current limiters operating with stacks of various small superconducting elements acting as secondaries were studied. The stacks consist of Y 1 Ba 2 Cu 3 O 7-δ thin film washers or Bi 1.8 Pb 0.26 Sr 2 Ca 2 Cu 3 O 10+x bulk rings. A central result of our work is an experimental demonstration that the limiting capability of the device is strongly reduced when several bulk rings are stacked, whereas it remains almost unchanged for thin film washers. The use of thin films should therefore allow us to build more efficient high power inductive limiters based on stacks of small washers

  15. Critical current behaviour of YBCO thin films described by vortex pinning on low-angle domain boundaries and vortex creep

    International Nuclear Information System (INIS)

    Golovchanskiy, I.A.; Pan, A.V.; Fedoseev, S.A.; Shcherbakova, O.V.; Dou, S.X.

    2012-01-01

    A pinning potential for vortices was introduced assuming plastic pinning of vortex lattice on chains of out-of-plane individual edge dislocations that form low-angle domain boundaries in high quality YBa 2 Cu 3 O 7 thin films. Using this pinning potential with the classical Kim-Anderson vortex creep approach a model for critical current dependence on field has been successfully developed. The model shows a plausible description of J c (B a ) over the entire field range. Electrical field criterion is incorporated providing the ability to compare measurements made with different criteria (including different measurement techniques). Applicability of this model has been verified by experimental data obtained by direct transport and magnetisation measurements on high quality films grown by pulsed laser deposition. Pinning potential obtained from the fitting procedure is consistent with theoretical predictions. The model showed that the effective pinning landscape changes under influence of external conditions.

  16. A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

    Science.gov (United States)

    Cai, M. X.; Yao, R. H.

    2018-03-01

    Temperature dependent electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are investigated considering the percolation and multiple trapping and release (MTR) conduction mechanisms. Carrier-density and temperature dependent carrier mobility in a-IGZO is derived with the Boltzmann transport equation, which is affected by potential barriers above the conduction band edge with Gaussian-like distributions. The free and trapped charge densities in the channel are calculated with Fermi-Dirac statistics, and the field effective mobility of a-IGZO TFTs is then deduced based on the MTR theory. Temperature dependent drain current model for a-IGZO TFTs is finally derived with the obtained low field mobility and free charge density, which is applicable to both non-degenerate and degenerate conductions. This physical-based model is verified by available experiment results at various temperatures.

  17. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

    International Nuclear Information System (INIS)

    Dubois, Marc-Alexandre; Muralt, Paul

    2001-01-01

    Polycrystalline aluminum nitride thin films were deposited onto platinum, aluminum, and titanium electrodes by reactive magnetron sputtering in the pulsed direct current mode. The films exhibited all a columnar microstructure and a c-axis texture. The built-in stress and the piezoelectric properties of these films were studied as a function of both the processing conditions and the electrode material. Stress was found to be very much dependent on the growth conditions, and values ranging from strong compression to high tension were observed. The piezoelectric d 33,f coefficient was shown to rely on substrate quality and ionic bombardment: The nucleation surface must be stable with regard to the nitrogen plasma and present a hexagonal symmetry and, on the other hand, enough energy must be delivered to the growing film through ionic bombardment. [copyright] 2001 American Institute of Physics

  18. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Suchea, M.; Christoulakis, S.; Katsarakis, N.; Kitsopoulos, T.; Kiriakidis, G.

    2007-01-01

    Pure and aluminum (Al) doped zinc oxide (ZnO and ZAO) thin films have been grown using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well as from Al-doped metallic ZnAl2at.% and ceramic ZnAl2at.%O targets at room temperature (RT). The effects of target composition on the film's surface topology, crystallinity, and optical transmission have been investigated for various oxygen partial pressures in the sputtering atmosphere. It has been shown that Al-doped ZnO films sputtered from either metallic or ceramic targets exhibit different surface morphology than the undoped ZnO films, while their preferential crystalline growth orientation revealed by X-ray diffraction remains always the (002). More significantly, Al-doping leads to a larger increase of the optical transmission and energy gap (E g ) of the metallic than of the ceramic target prepared films

  19. Leakage current phenomena in Mn-doped Bi(Na,K)TiO_3-based ferroelectric thin films

    International Nuclear Information System (INIS)

    Walenza-Slabe, J.; Gibbons, B. J.

    2016-01-01

    Mn-doped 80(Bi_0_._5Na_0_._5)TiO_3-20(Bi_0_._5K_0_._5)TiO_3 thin films were fabricated by chemical solution deposition on Pt/TiO_2/SiO_2/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, there were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ_i_o_n ≈ 1.7 × 10"−"1"2 cm"2 V"−"1 s"−"1 and E_A_,_i_o_n ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.

  20. Phase, current, absorbance, and photoluminescence of double and triple metal ion-doped synthetic and salmon DNA thin films

    Science.gov (United States)

    Chopade, Prathamesh; Reddy Dugasani, Sreekantha; Reddy Kesama, Mallikarjuna; Yoo, Sanghyun; Gnapareddy, Bramaramba; Lee, Yun Woo; Jeon, Sohee; Jeong, Jun-Ho; Park, Sung Ha

    2017-10-01

    We fabricated synthetic double-crossover (DX) DNA lattices and natural salmon DNA (SDNA) thin films, doped with 3 combinations of double divalent metal ions (M2+)-doped groups (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and single combination of a triple M2+-doped group (Cu2+-Ni2+-Co2+) at various concentrations of M2+ ([M2+]). We evaluated the optimum concentration of M2+ ([M2+]O) (the phase of M2+-doped DX DNA lattices changed from crystalline (up to ([M2+]O) to amorphous (above [M2+]O)) and measured the current, absorbance, and photoluminescent characteristics of multiple M2+-doped SDNA thin films. Phase transitions (visualized in phase diagrams theoretically as well as experimentally) from crystalline to amorphous for double (Co2+-Ni2+, Cu2+-Co2+, and Cu2+-Ni2+) and triple (Cu2+-Ni2+-Co2+) dopings occurred between 0.8 mM and 1.0 mM of Ni2+ at a fixed 0.5 mM of Co2+, between 0.6 mM and 0.8 mM of Co2+ at a fixed 3.0 mM of Cu2+, between 0.6 mM and 0.8 mM of Ni2+ at a fixed 3.0 mM of Cu2+, and between 0.6 mM and 0.8 mM of Co2+ at fixed 2.0 mM of Cu2+ and 0.8 mM of Ni2+, respectively. The overall behavior of the current and photoluminescence showed increments as increasing [M2+] up to [M2+]O, then decrements with further increasing [M2+]. On the other hand, absorbance at 260 nm showed the opposite behavior. Multiple M2+-doped DNA thin films can be used in specific devices and sensors with enhanced optoelectric characteristics and tunable multi-functionalities.

  1. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  2. Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

    Directory of Open Access Journals (Sweden)

    M. Egginger

    2012-12-01

    Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

  3. Defect generation and activation processes in HfO{sub 2} thin films: Contributions to stress-induced leakage currents

    Energy Technology Data Exchange (ETDEWEB)

    Oettking, Rolf; Leitsmann, Roman; Lazarevic, Florian; Plaenitz, Philipp [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); Kupke, Steve; Roll, Guntrade; Slesazeck, Stefan [NaMLab gGmbH, Dresden (Germany); Nadimi, Ebrahim [AQcomputare, Business Unit MATcalc, Chemnitz (Germany); K.N. Toosi University of Technology, Faculty of Electrical Engineering, Tehran (Iran, Islamic Republic of); Trentzsch, Martin [Globalfoundries Dresden, Dresden (Germany); Mikolajick, Thomas [Technische Universitaet Dresden, Fakultaet Elektrotechnik und Informationstechnik, Institut fuer Halbleiter- und Mikrosystemtechnik, Dresden (Germany)

    2015-03-01

    An important source of degradation in thin dielectric material layers is the generation and migration of oxygen vacancies. We investigated the formation of Frenkel pairs (FPs) in HfO{sub 2} as the first structural step for the creation of new defects as well as the migration of preexisting and newly built oxygen vacancies by nudged elastic band (NEB) calculations and stress induced leakage current (SILC) experiments. The analysis indicates, that for neutral systems no stable intimate FPs are built, whereas for the charge states q = ± 2 FPs are formed at threefold and at fourfold coordinated oxygen lattice sites. Their generation and annihilation rate are in equilibrium according to the Boltzmann statistics. Distant FPs (stable defects) are unlikely to build due to high formation energies and therefore cannot be accounted for the measured gate leakage current increase of nMOSFETs under constant voltage stress. The negatively charged oxygen vacancies were found to be very immobile in contrast to positively charged V{sub 0}'s with a low migration barrier that coincides well with the experimentally obtained activation energy. We show that rather the activation of preexisting defects and migration towards the interface than the defect generation are the cause for the gate oxide degradation. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. A Self-Powered Thin-Film Radiation Detector Using Intrinsic High-Energy Current (HEC) (Author’s Final Version)

    Science.gov (United States)

    2016-09-08

    of electromagnetic 85 pulse effects on cables and electrical devices4 and as a self - powered detector for in-core neutron flux measurement in nuclear...AFCEC-CX-TY-TP-2016-0003 A SELF - POWERED THIN-FILM RADIATION DETECTOR USING INTRINSIC HIGH-ENERGY CURRENT (HEC) (AUTHOR’S FINAL VERSION...14 -- 5 Oct 15 A self - powered thin-film radiation detector using intrinsic high-energy current (HEC) (Author’s Final Version) FA8051-15-P-0010

  5. Effects of doping on ferroelectric properties and leakage current behavior of KNN-LT-LS thin films on SrTiO3 substrate

    Science.gov (United States)

    Abazari, M.; Safari, A.

    2009-05-01

    We report the effects of Ba, Ti, and Mn dopants on ferroelectric polarization and leakage current of (K0.44Na0.52Li0.04)(Nb0.84Ta0.1Sb0.06)O3 (KNN-LT-LS) thin films deposited by pulsed laser deposition. It is shown that donor dopants such as Ba2+, which increased the resistivity in bulk KNN-LT-LS, had an opposite effect in the thin film. Ti4+ as an acceptor B-site dopant reduces the leakage current by an order of magnitude, while the polarization values showed a slight degradation. Mn4+, however, was found to effectively suppress the leakage current by over two orders of magnitude while enhancing the polarization, with 15 and 23 μC/cm2 remanent and saturated polarization, whose values are ˜70% and 82% of the reported values for bulk composition. This phenomenon has been associated with the dual effect of Mn4+ in KNN-LT-LS thin film, by substituting both A- and B-site cations. A detailed description on how each dopant affects the concentrations of vacancies in the lattice is presented. Mn-doped KNN-LT-LS thin films are shown to be a promising candidate for lead-free thin films and applications.

  6. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  7. Algorithms for Computing the Magnetic Field, Vector Potential, and Field Derivatives for a Thin Solenoid with Uniform Current Density

    Energy Technology Data Exchange (ETDEWEB)

    Walstrom, Peter Lowell [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-08-07

    A numerical algorithm for computing the field components Br and Bz and their r and z derivatives with open boundaries in cylindrical coordinates for radially thin solenoids with uniform current density is described in this note. An algorithm for computing the vector potential Aθ is also described. For the convenience of the reader, derivations of the final expressions from their defining integrals are given in detail, since their derivations are not all easily found in textbooks. Numerical calculations are based on evaluation of complete elliptic integrals using the Bulirsch algorithm cel. The (apparently) new feature of the algorithms described in this note applies to cases where the field point is outside of the bore of the solenoid and the field-point radius approaches the solenoid radius. Since the elliptic integrals of the third kind normally used in computing Bz and Aθ become infinite in this region of parameter space, fields for points with the axial coordinate z outside of the ends of the solenoid and near the solenoid radius are treated by use of elliptic integrals of the third kind of modified argument, derived by use of an addition theorem. Also, the algorithms also avoid the numerical difficulties the textbook solutions have for points near the axis arising from explicit factors of 1/r or 1/r2 in the some of the expressions.

  8. Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

    Science.gov (United States)

    Mäckel, Helmut; MacKenzie, Roderick C. I.

    2018-03-01

    Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

  9. LiFePO_4_−_xN_y thin-film electrodes coated on carbon fiber-modified current collectors for pseudocapacitors

    International Nuclear Information System (INIS)

    Chiu, Kuo-Feng; Su, Shih-Hsuan; Leu, Hoang-Jyh; Huang, Wei-Chieh

    2015-01-01

    LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs) under a gas mixture of N_2/Ar/H_2 as electrode materials in pseudocapacitors. The MCFs were fabricated by thermal chemical vapor deposition on stainless steel substrates as current collectors. Various amounts of N_2 were introduced by controlling the flow ratios of N_2 to Ar/H_2. The LiFePO_4_−_xN_y thin films coated on the surfaces of MCFs were observed by field emission scanning electron microscopy. The electrochemical properties of the LiFePO_4_−_xN_y thin films were characterized using cyclic voltammetry and charge–discharge processes. The LiFePO_4_−_xN_y thin-film electrode deposited under the optimal N_2 contents exhibited a high specific capacitance of 722 F/g at 1 A/g. Even at a current of 20 A/g, the electrode delivered a capacitance of 298 F/g. The pseudocapacitors using LiFePO_4_−_xN_y thin-film electrodes showed no significant capacitance fading after 1000 cycles at 1 A/g. The results indicated that nitrogen doping improved the electrochemical performances of LiFePO_4, demonstrating the potential of LiFePO_4_−_xN_y as an active material in pseudocapacitors. - Highlights: • LiFePO_4_−_xN_y thin films were sputter-deposited on micron carbon fibers (MCFs). • MCFs only act as a three-dimensional current collector in this system. • The pseudocapacitor exhibits a high specific capacitance.

  10. Experimental study of nonlinear interaction of plasma flow with charged thin current sheets: 2. Hall dynamics, mass and momentum transfer

    Directory of Open Access Journals (Sweden)

    S. Savin

    2006-01-01

    Full Text Available Proceeding with the analysis of Amata et al. (2005, we suggest that the general feature for the local transport at a thin magnetopause (MP consists of the penetration of ions from the magnetosheath with gyroradius larger than the MP width, and that, in crossing it, the transverse potential difference at the thin current sheet (TCS is acquired by these ions, providing a field-particle energy exchange without parallel electric fields. It is suggested that a part of the surface charge is self-consistently produced by deflection of ions in the course of inertial drift in the non-uniform electric field at MP. Consideration of the partial moments of ions with different energies demonstrates that the protons having gyroradii of roughly the same size or larger than the MP width carry fluxes normal to MP that are about 20% of the total flow in the plasma jet under MP. This is close to the excess of the ion transverse velocity over the cross-field drift speed in the plasma flow just inside MP (Amata et al., 2005, which conforms to the contribution of the finite-gyroradius inflow across MP. A linkage through the TCS between different plasmas results from the momentum conservation of the higher-energy ions. If the finite-gyroradius penetration occurs along the MP over ~1.5 RE from the observation site, then it can completely account for the formation of the jet under the MP. To provide the downstream acceleration of the flow near the MP via the cross-field drift, the weak magnetic field is suggested to rotate from its nearly parallel direction to the unperturbed flow toward being almost perpendicular to the accelerated flow near the MP. We discuss a deceleration of the higher-energy ions in the MP normal direction due to the interaction with finite-scale electric field bursts in the magnetosheath flow frame, equivalent to collisions, providing a charge separation. These effective collisions, with a nonlinear frequency proxy of the order of the proton

  11. Bipolar and unipolar resistive switching behaviors of sol–gel-derived SrTiO3 thin films with different compliance currents

    International Nuclear Information System (INIS)

    Tang, M H; Wang, Z P; Zeng, Z Q; Xu, X L; Wang, G Y; Zhang, L B; Xiao, Y G; Yang, S B; Jiang, B; Li, J C; He, J

    2011-01-01

    The SrTiO 3 (STO) thin films on a Pt/Ti/SiO 2 /Si substrate were synthesized using a sol–gel method to form a metal–insulator–metal structure. This device shows the bipolar resistance switching (BRS) behavior for a compliance current I cc of less than 0.1 mA but exhibits soft breakdown at a higher level of compliance current. A transition from the BRS behavior to the stable unipolar resistive switching behavior (URS) was also observed. We found that the BRS behavior may be controlled by the structure interface while the URS behavior is likely bulk controlled. Our study indicates that the external compliance current is a key factor in resistance switching phenomenon of STO thin films

  12. Exploration of a possible cause of magnetic reconfiguration/reconnection due to generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet

    Science.gov (United States)

    Huang, Y. C.; Lyu, L. H.

    2014-12-01

    Magnetic reconfiguration/reconnection plays an important role on energy and plasma transport in the space plasma. It is known that magnetic field lines on two sides of a tangential discontinuity can connect to each other only at a neutral point, where the strength of the magnetic field is equal to zero. Thus, the standard reconnection picture with magnetic field lines intersecting at the neutral point is not applicable to the component reconnection events observed at the magnetopause and in the solar corona. In our early study (Yu, Lyu, & Wu, 2011), we have shown that annihilation of magnetic field near a thin current sheet can lead to the formation of normal magnetic field component (normal to the current sheet) to break the frozen-in condition and to accelerate the reconnected plasma flux, even without the presence of a neutral point. In this study, we examine whether or not a generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet can also lead to reconnection of plasma flux. Our results indicate that a non-uniform enhancement of electric current can yield formation of field-aligned currents. The normal-component magnetic field generated by the field-aligned currents can yield reconnection of plasma flux just outside the current-enhancement region. The particle motion that can lead to non-uniform enhancement of electric currents will be discussed.

  13. Reversible pyroelectric and photogalvanic current in epitaxial Pb(Zr0.52Ti0.48)O3 thin films

    Science.gov (United States)

    Lee, J.; Esayan, S.; Prohaska, J.; Safari, A.

    1994-01-01

    The pyroelectric and photogalvanic effects have been studied in epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) thin films. Photoinduced currents, which were completely reversible by electrical voltage, were observed. The photoinduced currents exhibited transient and steady state components. The transient component, in turn, consisted of two components with fast (<1 s) and slow (˜hours) relaxation times. The mechanisms of the photoinduced currents in PZT films and their possible applications in nondestructive readout ferroelectric memory are discussed.

  14. An Island Coalescence Scenario for Near-Earth Current Disruption in the Magnetotail

    International Nuclear Information System (INIS)

    Zhi-Wei, Ma; Xing-Qiang, Lu

    2009-01-01

    A current disruption and dipolarization scenario associated with island coalescences in the near-Earth region is proposed. The thin and elongated current-sheet built up during the growth phase is unstable due to a tearing mode instability that leads to formation of multiple magnetic islands (or magnetic flux ropes in the three dimensional case) in the near-Earth region. The growth rate of the tearing mode should be different in different locations because the rate is in general determined by the external driving force and the local plasma sheet properties. When the rate of the magnetic reconnection in the mid-tail region around 20R E is much larger than that in other locations, the strong bulk earthward flows resulting from the fast reconnection in the mid-tail drive the earthward convection and the coalescence of the magnetic islands. Consequently, the cross-tail current in the near-Earth region is suddenly disrupted and the geometry of the magnetic field changes from tail-like to dipolar-like in the ideal time scale. This proposed scenario is tested by Hall MHD simulation and is compared with the observations. (geophysics, astronomy, and astrophysics)

  15. Enhancement of the critical current density in FeO-coated MgB2 thin films at high magnetic fields

    Directory of Open Access Journals (Sweden)

    Andrei E. Surdu

    2011-12-01

    Full Text Available The effect of depositing FeO nanoparticles with a diameter of 10 nm onto the surface of MgB2 thin films on the critical current density was studied in comparison with the case of uncoated MgB2 thin films. We calculated the superconducting critical current densities (Jc from the magnetization hysteresis (M–H curves for both sets of samples and found that the Jc value of FeO-coated films is higher at all fields and temperatures than the Jc value for uncoated films, and that it decreases to ~105 A/cm2 at B = 1 T and T = 20 K and remains approximately constant at higher fields up to 7 T.

  16. Current-Induced Joule Heating and Electrical Field Effects in Low Temperature Measurements on TIPS Pentacene Thin Film Transistors

    NARCIS (Netherlands)

    Nikiforov, G.O.; Venkateshvaran, D.; Mooser, S.; Meneau, A.; Strobel, T.; Kronemeijer, A.; Jiang, L.; Lee, M.J.; Sirringhaus, H.

    2016-01-01

    The channel temperature (Tch) of solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS pentacene) thin film transistors (TFTs) is closely monitored in real time during current–voltage (I–V) measurements carried out in a He exchange gas cryostat at various base temperatures (Tb)

  17. Energized Oxygen : Speiser Current Sheet Bifurcation

    Science.gov (United States)

    George, D. E.; Jahn, J. M.

    2017-12-01

    A single population of energized Oxygen (O+) is shown to produce a cross-tail bifurcated current sheet in 2.5D PIC simulations of the magnetotail without the influence of magnetic reconnection. Treatment of oxygen in simulations of space plasmas, specifically a magnetotail current sheet, has been limited to thermal energies despite observations of and mechanisms which explain energized ions. We performed simulations of a homogeneous oxygen background, that has been energized in a physically appropriate manner, to study the behavior of current sheets and magnetic reconnection, specifically their bifurcation. This work uses a 2.5D explicit Particle-In-a-Cell (PIC) code to investigate the dynamics of energized heavy ions as they stream Dawn-to-Dusk in the magnetotail current sheet. We present a simulation study dealing with the response of a current sheet system to energized oxygen ions. We establish a, well known and studied, 2-species GEM Challenge Harris current sheet as a starting point. This system is known to eventually evolve and produce magnetic reconnection upon thinning of the current sheet. We added a uniform distribution of thermal O+ to the background. This 3-species system is also known to eventually evolve and produce magnetic reconnection. We add one additional variable to the system by providing an initial duskward velocity to energize the O+. We also traced individual particle motion within the PIC simulation. Three main results are shown. First, energized dawn- dusk streaming ions are clearly seen to exhibit sustained Speiser motion. Second, a single population of heavy ions clearly produces a stable bifurcated current sheet. Third, magnetic reconnection is not required to produce the bifurcated current sheet. Finally a bifurcated current sheet is compatible with the Harris current sheet model. This work is the first step in a series of investigations aimed at studying the effects of energized heavy ions on magnetic reconnection. This work differs

  18. Influence of vortex-vortex interaction on critical currents across low-angle grain boundaries in YBa2Cu3O7-δ thin films

    Science.gov (United States)

    Albrecht, J.; Leonhardt, S.; Kronmüller, H.

    2001-01-01

    Low-angle grain boundaries with misorientation angles θ<5° in optimally doped thin films of YBa2Cu3O7-δ are investigated by magneto-optical imaging. By using a numerical inversion scheme of Biot-Savart's law, the critical current density across the grain boundary can be determined with a spatial resolution of about 5μm. Detailed investigation of the spatially resolved flux density and current density data shows that the current density across the boundary varies with varying local flux density. Combining the corresponding flux and current pattern, it is found that there exists a universal dependency of the grain boundary current on the local flux density. Considering the magnetic vortex-vortex interaction in and in the vicinity of the grain boundary, a model is developed that is able to describe the experimental data.

  19. Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

    Directory of Open Access Journals (Sweden)

    Joonwoo Kim

    2015-09-01

    Full Text Available The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode.

  20. Differences observed in the surface morphology and microstructure of Ni-Fe-Cu ternary thin films electrochemically deposited at low and high applied current densities

    International Nuclear Information System (INIS)

    Sarac, U; Kaya, M; Baykul, M C

    2016-01-01

    In this research, nanocrystalline Ni-Fe-Cu ternary thin films using electrochemical deposition technique were produced at low and high applied current densities onto Indium Tin Oxide (ITO) coated conducting glass substrates. Change of surface morphology and microstructural properties of the films were investigated. Energy dispersive X-ray spectroscopy (EDX) measurements showed that the Ni-Fe-Cu ternary thin films exhibit anomalous codeposition behaviour during the electrochemical deposition process. From the X-ray diffraction (XRD) analyses, it was revealed that there are two segregated phases such as Cu- rich and Ni-rich within the films. The crystallographic structure of the films was face-centered cubic (FCC). It was also observed that the film has lower lattice micro-strain and higher texture degree at high applied current density. Scanning electron microscopy (SEM) studies revealed that the films have rounded shape particles on the base part and cauliflower-like structures on the upper part. The film electrodeposited at high current density had considerably smaller rounded shape particles and cauliflower-like structures. From the atomic force microscopy (AFM) analyses, it was shown that the film deposited at high current density has smaller particle size and surface roughness than the film grown at low current density. (paper)

  1. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

    Science.gov (United States)

    Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

    2018-02-01

    InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

  2. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  3. Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

    International Nuclear Information System (INIS)

    Raypah, Muna E.; Devarajan, Mutharasu; Sulaiman, Fauziah

    2017-01-01

    The relationship between the photometric, electric, and thermal parameters of light-emitting diodes (LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide (InGaAlP)-based thin-film surface-mounted device (SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum (Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster (thermal transient tester) and TeraLED (thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency. (paper)

  4. High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

    Science.gov (United States)

    Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

    2016-02-01

    The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

  5. Ring current energy injection rate and solar wind-magnetosphere energy coupling

    International Nuclear Information System (INIS)

    Lee, L.C.; Kan, J.R.; Akasofu, S.-I.

    1982-01-01

    The purpose of this paper is to (i) formulate the ring current injection rate Usub(R) in terms of phisub(CT) (cross-tail potential drop) by assuming that the ring current formation is a direct consequence of an enhanced convection, (ii) examine the relationship between the injection rate Usub(R) and the power transferred from the solar wind to the magnetosphere and (iii) demonstrate that an enhanced convection indeed leads to the formation of the ring current. (author)

  6. Leakage current suppression with a combination of planarized gate and overlap/off-set structure in metal-induced laterally crystallized polycrystalline-silicon thin-film transistors

    Science.gov (United States)

    Chae, Hee Jae; Seok, Ki Hwan; Lee, Sol Kyu; Joo, Seung Ki

    2018-04-01

    A novel inverted staggered metal-induced laterally crystallized (MILC) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with a combination of a planarized gate and an overlap/off-set at the source-gate/drain-gate structure were fabricated and characterized. While the MILC process is advantageous for fabricating inverted staggered poly-Si TFTs, MILC TFTs reveal higher leakage current than TFTs crystallized by other processes due to their high trap density of Ni contamination. Due to this drawback, the planarized gate and overlap/off-set structure were applied to inverted staggered MILC TFTs. The proposed device shows drastic suppression of leakage current and pinning phenomenon by reducing the lateral electric field and the space-charge limited current from the gate to the drain.

  7. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  8. Substrate decoration for improvement of current-carrying capabilities of YBa{sub 2}Cu{sub 3}O{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khoryushin, Alexey V., E-mail: khoryushin@ya.ru [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark); Mozhaev, Peter B.; Mozhaeva, Julia E. [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark); Bdikin, Igor K. [Department of Mechanical Engineering, Centre for Mechanical Technology and Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Zhao, Yue [Department of Energy Conversion and Storage, Technical University of Denmark, DK-4000 Roskilde (Denmark); Andersen, Niels H.; Jacobsen, Claus S.; Hansen, Jørn Bindslev [Department of Physics, Technical University of Denmark, DTU Building 309, Kgs. Lyngby DK-2800 (Denmark)

    2013-03-15

    Highlights: ► Effects of substrate decoration on properties of YBCO thin films were studied. ► Y{sub 2}O{sub 3} nanoparticles, ultra-thin Y{sub 2}O{sub 3} and Y:ZrO{sub 2} layers were used as decoration layer. ► Decoration improves j{sub C} (5 T and 50 K) up to 0.97 MA/cm{sup 2} vs. 0.76 MA/cm{sup 2} for a reference film. ► Ultra-thin layer of yttria and yttria nanoparticles have a similar effect on YBCO. ► Y{sub 2}O{sub 3} decoration results in power law coefficient α = 0.3 vs. α = 0.4 for a reference film. -- Abstract: The effects of substrate decoration with yttria and Y:ZrO{sub 2} on the structural and electrical properties of the YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) thin films are studied. The films were deposited on (LaAlO{sub 3}){sub 3}–(Sr{sub 2}AlTaO{sub 8}){sub 7} substrates by pulsed laser deposition. Two different structures of decoration layer were applied, a template layer of nanoparticles and an uniform ultra-thin layer. Significant improvement of current-carrying capabilities was observed, especially at high external magnetic fields. Structural studies of these films reveal the presence of extended linear defects in the YBCO matrix. The formation of these structures is attributed to seeding of randomly oriented YBCO grains due to suppression of epitaxy in the very beginning of the deposition. The films of both kinds of decoration layers show nearly the same improvement of j{sub C} over the reference film at 77 and 50 K: j{sub C} (5T and 50 K) reaches 0.92 and 0.97 MA/cm{sup 2} for uniform and template decoration layers. At 5 and 20 K the effect of template decoration layers is more beneficial: j{sub C} (5T and 20 K) values are 3.5 and 4.1 MA/cm{sup 2}, j{sub C} (5T and 5 K) values are 6.4 and 7.9 MA/cm{sup 2}, for uniform and template decoration layers, respectively.

  9. The Safety and Efficacy of a Sustainable Marine Extract for the Treatment of Thinning Hair: A Summary of New Clinical Research and Results from a Panel Discussion on the Problem of Thinning Hair and Current Treatments.

    Science.gov (United States)

    Hornfeldt, Carl S; Holland, Mark; Bucay, Vivian W; Roberts, Wendy E; Waldorf, Heidi A; Dayan, Steven H

    2015-09-01

    Alopecia and thinning hair are highly prevalent conditions affecting a large proportion of men and women. Diffused hair loss is often more difficult to diagnose in women, mostly due to over-reliance on the assumption of hormonal influences, and it is commonly treated with a multi-therapy approach. Clinical studies have demonstrated the effectiveness of a nutraceutical supplement to provide essential nutrients that aid in stimulating existing hair growth and reducing hair shedding. The supplement Viviscal® contains a proprietary blend of proteins, lipids, and glycosaminoglycans derived from sustainable marine sources. We present here a summary of studies that have examined the safety and efficacy of this nutraceutical; as well as discussions on hair loss and current therapies from a recently convened expert panel in dermatology and plastic surgery.

  10. Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaozhi; Yue, Zhenxing, E-mail: yuezhx@mail.tsinghua.edu.cn; Meng, Siqin; Yuan, Lixin [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-12-28

    In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112{sup ¯}0) sapphire (Al{sub 2}O{sub 3}) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (M{sub r}/M{sub s} of 0.96) along the in-plane easy axis and low M{sub r}/M{sub s} of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101{sup ¯}0)//α-Fe{sub 2}O{sub 3}(112{sup ¯}0)//Al{sub 2}O{sub 3}(112{sup ¯}0)

  11. Grating-coupled surface plasmon enhanced short-circuit current in organic thin-film photovoltaic cells.

    Science.gov (United States)

    Baba, Akira; Aoki, Nobutaka; Shinbo, Kazunari; Kato, Keizo; Kaneko, Futao

    2011-06-01

    In this study, we demonstrate the fabrication of grating-coupled surface plasmon resonance (SPR) enhanced organic thin-film photovoltaic cells and their improved photocurrent properties. The cell consists of a grating substrate/silver/P3HT:PCBM/PEDOT:PSS structure. Blu-ray disk recordable substrates are used as the diffraction grating substrates on which silver films are deposited by vacuum evaporation. P3HT:PCBM films are spin-coated on silver/grating substrates. Low conductivity PEDOT:PSS/PDADMAC layer-by-layer ultrathin films deposited on P3HT:PCBM films act as the hole transport layer, whereas high conductivity PEDOT:PSS films deposited by spin-coating act as the anode. SPR excitations are observed in the fabricated cells upon irradiation with white light. Up to a 2-fold increase in the short-circuit photocurrent is observed when the surface plasmon (SP) is excited on the silver gratings as compared to that without SP excitation. The finite-difference time-domain simulation indicates that the electric field in the P3HT:PCBM layer can be increased using the grating-coupled SP technique. © 2011 American Chemical Society

  12. Generation of pure spin currents via spin Seebeck effect in self-biased hexagonal ferrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Peng; Ellsworth, David; Chang, Houchen; Janantha, Praveen; Richardson, Daniel; Phillips, Preston; Vijayasarathy, Tarah; Wu, Mingzhong, E-mail: mwu@lamar.colostate.edu [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); Shah, Faisal [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-12-15

    Light-induced generation of pure spin currents in a Pt(2.5 nm)/BaFe{sub 12}O{sub 19}(1.2 μm)/sapphire(0.5 mm) structure is reported. The BaFe{sub 12}O{sub 19} film had strong in-plane uniaxial anisotropy and was therefore self-biased. Upon exposure to light, a temperature difference (ΔT) was established across the BaFe{sub 12}O{sub 19} thickness that gave rise to a pure spin current in the Pt via the spin Seebeck effect. Via the inverse spin Hall effect, the spin current produced an electric voltage across one of the Pt lateral dimensions. The voltage varied with time in the same manner as ΔT and flipped its sign when the magnetization in BaFe{sub 12}O{sub 19} was reversed.

  13. Tunneling magnetoresistance of ultra-thin Co-SiO2 granular films with narrow current channels

    International Nuclear Information System (INIS)

    Honda, S.; Hirata, M.; Ishimaru, M.

    2005-01-01

    We have constructed the tunneling magnetoresistance (TMR) junction of AuCr/SiO 2 /Co-SiO 2 /SiO 2 /AuCr with narrow current channels, where the TMR occurs in the Co-SiO 2 layer with 10-50 nm thickness. The magnetic properties are independent of thickness, while the TMR properties depend fairly on thickness. The current (I)-bias voltage (V B ) curve is nonlinear, namely the differential resistivity decreases with increasing V B , and also the magnetoresistance ratio decreases

  14. Impact of sodium on the secondary phases and current pathway in Cu{sub 2}(Zn,Sn)Se{sub 4} thin film solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Yi-Cheng, E-mail: ielinyc@cc.ncue.edu.tw [Department of Mechatronics Engineering, National Changhua University of Education, Changhua, Taiwan (China); Lai, Chien-Mu [Department of Mechatronics Engineering, National Changhua University of Education, Changhua, Taiwan (China); Hsu, Hung-Ru [Green Energy & Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan (China)

    2017-05-01

    In this study, we investigated the influence of Na content on secondary phases and current pathway in Cu{sub 2}(Zn,Sn)Se{sub 4} (CZTSe) thin film solar cells with the following structure: Ti/Mo:Na/Mo/CZTSe/CdS/i-ZnO/ZnO:Al/Al. The application of Na-doped Mo target as a source of sodium. Experimental results demonstrate that increasing the Na content leads to an increase in the quantity of secondary phase SnSe{sub 2} on the surface of the absorber layer; however, it did not appear to affect the secondary phases of Cu{sub 2}SnSe{sub 3} (CTSe) or ZnSe. Excessive quantities of Na were shown to have an adverse effect on device efficiency. Our results using conductive atomic force microscopy (C-AFM) revealed that an increase in the quantity of secondary phase SnSe{sub 2} can shift the current pathway on the surface of CZTSe from CZTSe grain boundaries (GBs) to the SnSe{sub 2} grains. The role of secondary phase SnSe{sub 2} of the CZTSe acted as a channel for the current flow, which results in high leakage current and low device efficiency. - Highlights: • Increasing the Na content leads to an increase in the quantity of secondary phase SnSe{sub 2}. • An increase of secondary phase SnSe{sub 2} can shift the current pathway from CZTSe grain boundaries to the SnSe{sub 2} grains. • The secondary phase SnSe{sub 2} acted as a channel for the current flow, which results in high leakage current.

  15. Temperature-dependent leakage current behavior of epitaxial Bi0.5Na0.5TiO3-based thin films made by pulsed laser deposition

    Science.gov (United States)

    Hejazi, M. M.; Safari, A.

    2011-11-01

    This paper discusses the electrical conduction mechanisms in a 0.88 Bi0.5Na0.5TiO3-0.08 Bi0.5K0.5TiO3-0.04 BaTiO3 thin film in the temperature range of 200-350 K. The film was deposited on a SrRuO3/SrTiO3 substrate by pulsed laser deposition technique. At all measurement temperatures, the leakage current behavior of the film matched well with the Lampert's triangle bounded by three straight lines of different slopes. The relative location of the triangle sides varied with temperature due to its effect on the density of charge carriers and un-filled traps. At low electric fields, the ohmic conduction governed the leakage mechanism. The calculated activation energy of the trap is 0.19 eV implying the presence of shallow traps in the film. With increasing the applied field, an abrupt increase in the leakage current was observed. This was attributed to a trap-filling process by the injected carriers. At sufficiently high electric fields, the leakage current obeyed the Child's trap-free square law suggesting the space charge limited current was the dominant mechanism.

  16. Critical current density of strained multilayer thin films of Nd1.83Ce0.17CuOx/YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Gross, R.; Gupta, A.; Olsson, E.; Segmueller, A.; Koren, G.

    1990-01-01

    The superconducting transport properties of strained multilayer thin films of YBa 2 Cu 3 O 7-δ / Nd 1.83 Ce 0.17 CuO x , grown heteroepitaxially by laser ablation deposition, are reported. For individual layer thicknesses below a critical layer thickness of about 250 A, coherency strain removes the orthorhombic distortion in the YBa 2 Cu 3 O 7-δ layers and makes them twin-free. Zero-field critical current densities as high as 1.1x10 7 A/cm 2 at 77 K have been measured for the YBa 2 Cu 3 O 7-δ layers. Flux pinning energies at zero temperature and zero magnetic field in the range of 80--140 meV have been found

  17. Unusually high critical current of P-doped BaFe{sub 2}As{sub 2} single crystalline thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kurth, Fritz; Engelmann, Jan; Schultz, Ludwig [IMW, IFW Dresden, Dresden (Germany); TU Dresden, Dresden (Germany); Tarantini, Chiara; Jaroszynski, Jan [ASC, NHMFL, Florida (United States); Grinenko, Vadim; Reich, Elke; Huehne, Ruben [IMW, IFW Dresden, Dresden (Germany); Haenisch, Jens [IMW, IFW Dresden, Dresden (Germany); ITEP, KIT, Karlsruhe (Germany); Mori, Yasohiro; Sakagami, Akihiro; Kawaguchi, Takahiko; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan); Holzapfel, Bernhard [ITEP, KIT, Karlsruhe (Germany); Iida, Kazumasa [IMW, IFW Dresden, Dresden (Germany); Department of Crystalline Materials Science, Nagoya University, Nagoya (Japan)

    2015-07-01

    Microstructurally clean, isovalently P-doped BaFe{sub 2}As{sub 2} single crystalline thin films have been prepared by molecular beam epitaxy. These films show a superconducting transition temperature (T{sub c}) of over 30 K and high transport self-field critical current densities (J{sub c}) of over 6 MA/cm{sup 2} at 4.2 K, which are among the highest for Fe based superconductors. In-field J{sub c} exceeds 0.1 MA/cm{sup 2} at μ{sub 0}H = 35 T for H parallel ab and μ{sub 0}H = 18 T for H parallel c, respectively, in spite of moderate upper critical fields compared to other FeSCs with similar T{sub c}. This unusually high J{sub c} makes P-doped Ba-122 very favorable for high-field magnet applications.

  18. Evaluating Origin of Electron Traps in Tris(8-hydroxyquinoline) Aluminum Thin Films using Thermally Stimulated Current Technique

    OpenAIRE

    Matsushima, Toshinori; Adachi, Chihaya

    2008-01-01

    We measured the energy distributions and concentrations of electron traps in O_2-unexposed and O_2-exposed tris(8-hydroxyquinoline) aluminum (Alq_3) films using a thermally stimulated current (TSC) technique to investigate how doping O_2 molecules in Alq_3 films affect the films' electron trap and electron transport characteristics. The results of our TSC studies revealed that Alq_3 films have an electron trap distribution with peak depths ranging from 0.075 to 0.1 eV and peak widths ranging ...

  19. Eddy-current inversion in the thin-skin limit: Determination of depth and opening for a long crack

    Science.gov (United States)

    Burke, S. K.

    1994-09-01

    A method for crack size determination using eddy-current nondestructive evaluation is presented for the case of a plate containing an infinitely long crack of uniform depth and uniform crack opening. The approach is based on the approximate solution to Maxwell's equations for nonmagnetic conductors in the limit of small skin depth and relies on least-squares polynomial fits to a normalized coil impedance function as a function of skin depth. The method is straightforward to implement and is relatively insensitive to both systematic and random errors. The procedure requires the computation of two functions: a normalizing function, which depends both on the coil parameters and the skin depth, and a crack-depth function which depends only on the coil parameters in addition to the crack depth. The practical perfomance of the method was tested using a set of simulated cracks in the form of electro-discharge machined slots in aluminum alloy plates. The crack depths and crack opening deduced from the eddy-current measurements agree with the actual crack dimensions to within 10% or better. Recommendations concerning the optimum conditions for crack sizing are also made.

  20. Correlations between critical current density, jc, critical temperature, Tc, and structural quality of Y1B2Cu3O7-x thin superconducting films

    International Nuclear Information System (INIS)

    Chrzanowski, J.; Xing, W.B.; Atlan, D.

    1994-01-01

    Correlations between critical current density (j c ) critical temperature (T c ) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO 3 single crystals. Distinct maxima in j c as a function of the linewidths of the (00 ell) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j c indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T c increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j c and the density of edge dislocations N D was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N D ∼1-2 x 10 9 /cm 2

  1. Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    Venturini, E.L.; Siegal, M.P.; White, A.E.; Hou, S.Y.; Phillips, J.M.

    1993-01-01

    The appropriate fluence of 2.0 MeV H + ions has been shown previously to enhance the critical current density J c by a factor of two at a magnetic field of 0.9 tesla in 1,000 angstrom thick epitaxial films of YBa 2 Cu 3 O 7-δ grown by the ex situ BaF 2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J c versus temperature and magnetic field. TRIM simulations suggest that H + irradiation generates mainly point defects throughout the crystal structure. The authors show here that such defects result in an even greater enhancement of J c for fields above 1 tesla plus a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data

  2. Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O7-δ thin films

    International Nuclear Information System (INIS)

    Venturini, E.L.; Siegal, M.P.; White, A.E.; Hou, S.Y.; Phillips, J.M.

    1992-01-01

    The appropriate fluence of 2.0 MeV H + ions has been shown previously to enhance the critical current density J c by a factor of two at a magnetic field of 0.9 tesla in 1000 Angstrom thick epitaxial films of YBa 2 Cu 3 O 7-δ grown by the ex situ BaF 2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J c versus temperature and magnetic field. TRIM simulations suggest that H + irradiation generates mainly point defects throughout the crystal structure. We show here that such defects produce both a large enhancement of J c for fields above 1 tesla and a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data

  3. Enhanced vortex pinning and critical current density in proton-irradiated YBa2Cu3O(7-delta) thin films

    Science.gov (United States)

    Venturini, E. L.; Siegal, M. P.; White, A. E.; Hou, S. Y.; Phillips, J. M.

    1992-11-01

    The appropriate fluence of 2.0 MeV H(sup +) ions has been shown previously to enhance the critical current density J(sub c) by a factor of two at a magnetic field of 0.9 tesla in 1000 (Angstrom) thick epitaxial films of YBa(2)Cu(3)O(7-delta) grown by the ex situ BaF2 process. The as-grown films exhibit single crystal-like behavior in both atomic ordering and J(sub c) versus temperature and magnetic field. TRIM simulations suggest that H(sup +) irradiation generates mainly point defects throughout the crystal structure. We show here that such defects produce both a large enhancement of J(sub c) for fields above 1 tesla and a significant increase in the apparent vortex pinning potential deduced from magnetization relaxation data.

  4. Effect of Y2O3 Nanoparticles on Critical Current Density of YBa2Cu3O7-x Thin Films

    International Nuclear Information System (INIS)

    Tran, H. D.; Reddy, Sreekantha; Wie, C. H.; Kang, B.; Oh, Sang Jun; Lee, Sung Ik

    2009-01-01

    Introduction of proper impurity into YBa 2 Cu 3 O 7-x (YBCO) thin films is an effective way to enhance its flux-pinning properties. We investigate effect of Y 2 O 3 nanoparticles on the critical current density J c of the YBCO thin films. The Y 2 O 3 nanoparticles were created perpendicular to the film surface (parallel with the c-axis) either between YBCO and substrate or on top of YBCO, YBCO/Y 2 O 3 /LAO or Y 2 O 3 /YBCO/STO, by pulsed laser deposition. The deposition temperature of the YBCO films were varied (780 degree C and 800 degree C) to modify surface morphology of the YBCO films. Surface morphology characterization revealed that the lower deposition temperature of 780 degree C created nano-sized holes on the YBCO film surface which may behave as intrinsic pinning centers, while the higher deposition temperature produced much denser and smoother surface. J-c values of the YBCO films with Y 2 O 3 particles were either remained nearly the same or decreased for the samples in which YBCO is grown at 780 degree C. On the other hand, J-c values were enhanced for the samples in which YBCO is grown at higher temperature of 800 degree C. The difference in the effect of Y 2 O 3 can be explained by the fact that the higher deposition temperature of 800 degree C reduces intrinsic pinning centers and J c is enhanced by introduction of artificial pinning centers in the form of Y 2 O 3 nanoparticles.

  5. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

  6. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  7. Direct current magnetron sputtered ZrB{sub 2} thin films on 4H-SiC(0001) and Si(100)

    Energy Technology Data Exchange (ETDEWEB)

    Tengdelius, Lina, E-mail: lina.tengdelius@liu.se [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Samuelsson, Mattias [Impact Coatings AB, Westmansgatan 29, SE-582 16 Linköping (Sweden); Jensen, Jens; Lu, Jun; Hultman, Lars; Forsberg, Urban; Janzén, Erik; Högberg, Hans [Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2014-01-01

    ZrB{sub 2} thin films have been synthesized using direct current magnetron sputtering from a ZrB{sub 2} compound target onto 4H-SiC(0001) and Si(100) substrates kept at different temperatures (no heating, 400 °C, and 550 °C), and substrate bias voltage (− 20 V to − 80 V). Time-of-flight energy elastic recoil detection analysis shows that all the films are near stoichiometric and have a low degree of contaminants, with O being the most abundant (< 1 at.%). The films are crystalline, and their crystallographic orientation changes from 0001 to a more random orientation with increased deposition temperature. X-ray diffraction pole figures and selected area electron diffraction patterns of the films deposited without heating reveal a fiber-texture growth. Four point probe measurements show typical resistivity values of the films ranging from ∼ 95 to 200 μΩ cm, decreasing with increased growth temperature and substrate bias. - Highlights: • ZrB{sub 2} films have been deposited on 4H-SiC(0001) and Si(100). • Film composition correlates well to that of the target. • Level of contamination in the films is low. • Film resistivity values range from ∼ 95 to 200 μΩ cm.

  8. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Dapeng Wang

    2018-04-01

    Full Text Available In this study, the initial electrical properties, positive gate bias stress (PBS, and drain current stress (DCS-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO thin-film transistors (TFTs with various active layer thicknesses (TIGZO are investigated. As the TIGZO increased, the turn-on voltage (Von decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened.

  9. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

    Science.gov (United States)

    Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

    2018-04-05

    In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

  10. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    International Nuclear Information System (INIS)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

    2014-01-01

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  11. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

    2014-09-15

    AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

  12. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  13. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  14. Substrate decoration for improvement of current-carrying capabilities of YBa2Cu3Ox thin films

    DEFF Research Database (Denmark)

    Khoryushin, Alexey; Mozhaev, Peter; Mozhaeva, Julia

    2013-01-01

    The effects of substrate decoration with yttria and Y:ZrO2 on the structural and electrical properties of the YBa2Cu3Ox (YBCO) thin films are studied. The films were deposited on (LaAlO3)3–(Sr2AlTaO8)7 substrates by pulsed laser deposition. Two different structures of decoration layer were applie...

  15. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  16. Electrical resistivity change in Al:ZnO thin films dynamically deposited by bipolar pulsed direct-current sputtering and a remote plasma source

    International Nuclear Information System (INIS)

    Yang, Wonkyun; Joo, Junghoon

    2010-01-01

    The Al-doped ZnO (AZO) thin films for a transparent conducting oxide in solar cell devices were deposited by bipolar pulsed dc magnetron sputtering. This work was performed in an in-line type system and investigated AZO films in a static deposition mode and dynamic one, which is more important in the practical fields. Because of this dynamic deposition process, the zigzagged columnar structure was observed. This resulted in the decreasing electrical property, optical properties, and surface roughness. As a deposition in the dynamic mode, the resistivity increased from 1.64x10 -3 to 2.50x10 -3 Ω cm, as compared to that in the static mode, and the transmittance also decreased from 83.9% to 78.3%. To recover the disadvantage, a remote plasma source (RPS) was supported between the substrate and target for reducing zigzagged formation during the deposition. The deposition rate decreased by using RPS, but the electrical and optical properties of films got better than only dynamic mode. The resistivity and transmittance in the dynamic mode using RPS were 2.1x10 -3 Ω cm and 85.5%, respectively. In this study, the authors found the possibility to advance the electrical and optical properties of AZO thin films in the industry mode.

  17. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    International Nuclear Information System (INIS)

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk

    2015-01-01

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping

  18. Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Park, Jozeph [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Ahn, Byung Du [School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

    2015-03-23

    The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

  19. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  20. Thin films: Past, present, future

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  1. Improved current transport properties of post annealed Y1Ba2Cu3O7-x thin films using Ag doping

    DEFF Research Database (Denmark)

    Clausen, Thomas; Skov, Johannes; Jacobsen, Claus Schelde

    1996-01-01

    The influence of Ag doping on the transport properties of Y1Ba2Cu3O7–x thin films prepared by Y, BaF2, and Cu co-evaporation and optimized ex situ post annealing has been investigated. Both undoped and Ag doped films have values of Tc above 90 K, but Jc (77 K) is highly dependent on the nominal...... thickness (tnom) of the as-deposited film. For undoped films with tnom>106 A/cm2) decreases monotonically with increasing film thickness. Above 300 nm Jc (77 K) decreases rapidly to values below 5×105 A/cm2. Ag doped films with tnom>=200 nm have higher Jc (77 K) values than those of undoped films. Ag doped...... films have a maximum in Jc (77 K) around 250 nm. As for the undoped films, there is a large decrease in Jc (77 K) for Ag doped films with tnom>=300 nm. It was found that the higher values of Jc (77 K) for the Ag doped films were due to a better epitaxial growth of the YBCO compound. The low values of Jc...

  2. Ion transport in thin cell electrodeposition: modelling three-ion electrolytes in dense branched morphology under constant voltage and current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, G. [Courant Institute of Mathematical Sciences, New York University, New York, NY 10012 (United States) and Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)]. E-mail: marshalg@mail.retina.ar; Molina, F.V. [INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Soba, A. [Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)

    2005-05-30

    Electrochemical deposition (ECD) and spatially coupled bipolar electrochemistry (SCBE) experiments in thin-layer cells are known to produce complex ion transport patterns concomitantly with the growth of dendrite-like structures. Here we present a macroscopic model of ECD and SCBE with a three-ion electrolyte in conditions of dense branched morphology. The model describes ion transport and deposit growth through the one-dimensional Nernst-Planck equations for ion transport, the Poisson equation for the electric field and, for ECD, a growth law for deposit evolution. We present numerical simulations for typical electrochemical deposition experiments: dense branched morphology in ECD and the incubation period in SCBE. In ECD the model predicts cation, anion and proton concentration profiles, electric field variations and deposit growth speed, that are in qualitative agreement with experiments; the predicted evolution and collision of the deposit and proton fronts reveal a time scaling close to those observed in experiments. In SCBE, the model predicts that the inverse of the incubation time scales linearly with the applied voltage. Such behaviour was observed in experiments.

  3. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  4. Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50(Ti0.80Sn0.20O3 Thin Films Prepared Using Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Venkata Sreenivas Puli

    2015-01-01

    Full Text Available Nanoscale switchable ferroelectric (Ba0.50Sr0.50(Ti0.80Sn0.20O3-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM technique has been employed to acquire out-of-plane (OPP piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.

  5. Spinomotive force induced by a transverse displacement current in a thin metal or doped-semiconductor sheet: Classical and quantum views.

    Science.gov (United States)

    Hu, Chia-Ren

    2004-03-01

    We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.

  6. Critical current density of strained multilayer thin films of Nd sub 1. 83 Ce sub 0. 17 CuO sub x /YBa sub 2 Cu sub 3 O sub 7 minus. delta

    Energy Technology Data Exchange (ETDEWEB)

    Gross, R.; Gupta, A.; Olsson, E.; Segmueller, A.; Koren, G. (IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA))

    1990-07-09

    The superconducting transport properties of strained multilayer thin films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/ Nd{sub 1.83}Ce{sub 0.17}CuO{sub {ital x}}, grown heteroepitaxially by laser ablation deposition, are reported. For individual layer thicknesses below a critical layer thickness of about 250 A, coherency strain removes the orthorhombic distortion in the YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} layers and makes them twin-free. Zero-field critical current densities as high as 1.1{times}10{sup 7} A/cm{sup 2} at 77 K have been measured for the YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} layers. Flux pinning energies at zero temperature and zero magnetic field in the range of 80--140 meV have been found.

  7. Thin Places

    OpenAIRE

    Lockwood, Sandra Elizabeth

    2013-01-01

    This inquiry into the three great quests of the twentieth century–the South Pole, Mount Everest, and the Moon–examines our motivations to venture into these sublime, yet life-taking places. The Thin Place was once the destination of the religious pilgrim seeking transcendence in an extreme environment. In our age, the Thin Place quest has morphed into a challenge to evolve beyond the confines of our own physiology; through human ingenuity and invention, we reach places not meant to accommod...

  8. Photoinduced crystallization and space charge limited current through Au/Se92.7S7.3/Au thin films

    International Nuclear Information System (INIS)

    EL-Barry, A.M.A.

    2007-01-01

    The present paper reports a study of photoinduced crystallization in thermally evaporated Se 92.7 S 7.3 films. The photoinduced crystallization was achieved by shining white light (from 25 mW/cm 2 tungsten lamp) at room temperature for different exposure times up to 5.184 Ms. The analysis of X-ray diffraction (XRD) patterns indicated that the grain size (D), the strain (ζ) and the dislocation density (δ) are photoaging dependent. The capacitance-voltage data confirmed that the relative permittivity of the films is equal to ∼10.31. Room temperature current density voltage characteristics of Au/Se 92.7 S 7.3 /Au films showed Ohmic conduction in the lower voltage range ∼<1 V, and space charge limited conductivity (SCLC) in the relatively high-voltage range. The SCLC was controlled by an exponential distribution of traps above the valence band. The temperature dependence of the current density in accordance with the theory for the exponential trap distributions allowed the calculation of some essential parameters such as; trap concentration, characteristic temperature, and the trap density

  9. Correlations between critical current density, j{sub c}, critical temperature, T{sub c}, and structural quality of Y{sub 1}B{sub 2}Cu{sub 3}O{sub 7-x} thin superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Chrzanowski, J.; Xing, W.B.; Atlan, D. [Simon Fraser Univ., British Columbia (Canada)] [and others

    1994-12-31

    Correlations between critical current density (j{sub c}) critical temperature (T{sub c}) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO{sub 3} single crystals. Distinct maxima in j{sub c} as a function of the linewidths of the (00{ell}) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j{sub c} indicate that the magnetic flux lines, in films of structural quality approaching that of single crystals, are insufficiently pinned which results in a decreased critical current density. T{sub c} increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j{sub c} and the density of edge dislocations N{sub D} was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N{sub D}{approximately}1-2 x 10{sup 9}/cm{sup 2}.

  10. Enhancement of critical current density of YBa2Cu3O7-δ thin films by nanoscale CeO2 pretreatment of substrate surfaces

    International Nuclear Information System (INIS)

    Cui, X.M.; Liu, G.Q.; Wang, J.; Huang, Z.C.; Zhao, Y.T.; Tao, B.W.; Li, Y.R.

    2007-01-01

    YBa 2 Cu 3 O 7-δ (YBCO) films were prepared on single-crystal SrTiO 3 substrates with metal-organic deposition using trifluoroacetates (TFA-MOD). Positive results have been acquired in controlled study to investigate the effects of substrate surface modification on the growth-induced flux-pinning nanostructures in YBCO films. Nanoscale CeO 2 particles were applied to single-crystal SrTiO 3 substrate surfaces using pulsed laser deposition before YBCO precursors coating. Superconducting properties of the YBCO films grown on the controlled CeO 2 -modified substrates have shown substantial improvement in the critical current densities (J c ) at 77 K over those grown on untreated substrates in almost all the field (78% increment at 1 T, 77 K). We think the reason is that the CeO 2 nanoparticles act as pinning centers

  11. Thin book

    DEFF Research Database (Denmark)

    En lille bog om teater og organisationer, med bidrag fra 19 teoretikere og praktikere, der deltog i en "Thin Book Summit" i Danmark i 2005. Bogen bidrager med en state-of-the-art antologi om forskellige former for samarbejde imellem teater og organisationer. Bogen fokuserer både på muligheder og...

  12. Crystallinity, etchability, electrical and mechanical properties of Ga doped amorphous indium tin oxide thin films deposited by direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lee, Hyun-Jun; Song, Pung-Keun

    2014-01-01

    Indium tin oxide (ITO) and Ga-doped ITO (ITO:Ga) films were deposited on glass and polyimide (PI) substrates by direct current (DC) magnetron sputtering using different ITO:Ga targets (doped-Ga: 0, 0.1 and 2.9 wt.%). The films were deposited with a thickness of 50 nm and then post-annealed at various temperatures (room temperature-250 °C) in a vacuum chamber for 30 min. The amorphous ITO:Ga (0.1 wt.% Ga) films post-annealed at 220 °C exhibited relatively low resistivity (4.622x10 −4 Ω cm), indicating that the crystallinity of the ITO:Ga films decreased with increasing Ga content. In addition, the amorphous ITO:Ga films showed a better surface morphology, etchability and mechanical properties than the ITO films. - Highlights: • The Ga doped indium tin oxide (ITO) films crystallized at higher temperatures than the ITO films. • The amorphisation of ITO films increases with increasing Ga content. • Similar resistivity was observed between crystalline ITO and amorphous Ga doped ITO films. • Etching property of ITO film was improved with increasing Ga content

  13. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2017-01-01

    Since the discovery of the giant magnetoresistance effect in magnetic multilayers in 1988, a new branch of physics and technology, called spin-electronics or spintronics, has emerged, where the flow of electrical charge as well as the flow of electron spin, the so-called “spin current,” are manipulated and controlled together. The physics of magnetism and the application of spin current have progressed in tandem with the nanofabrication technology of magnets and the engineering of interfaces and thin films. This book aims to provide an introduction and guide to the new physics and applications of spin current, with an emphasis on the interaction between spin and charge currents in magnetic nanostructures.

  14. CALCULATION AND EXPERIMENTAL ESTIMATION OF RESULTS OF ELECTRO-THERMAL ACTION OF RATIONED BY THE INTERNATIONAL STANDARD IEC 62305-1-2010 IMPULSE CURRENT OF SHORT BLOW OF ARTIFICIAL LIGHTNING ON THE THIN-WALLED COVERAGE FROM STAINLESS STEEL

    Directory of Open Access Journals (Sweden)

    M. I. Baranov

    2017-03-01

    Full Text Available Purpose. Calculation and experimental researches of electro-thermal resistibility of the pre-production thin-walled sheet models of outward roof of height technical buildings from stainless steel are easily soiled 12Х18Н10Т to direct action on them rationed by the International Standard IEC 62305-1-2010 aperiodic impulse of current of short bow of artificial lightning of temporal form 10/350 μs with the proper admittances on his peak-temporal parameters (PTP. Methodology. Electrophysics bases of technique of high voltage and large impulsive currents (LIC, and also scientific and technical bases of planning of high-voltage impulsive devices and measuring methods in them LIC with followings below extreme PTP: amplitude of impulse of current of ImL=200 кА (with admittance ±10 %; integral of action of impulse of current of JL=10·106 A2·s (with admittance ±35 %; %; duration of wavefront current of T1=10 μs (with admittance ±20 %; time, proper amplitude of impulse of current of ImL, tmL≤24 μs (with admittance ±20 %; duration of flowing of impulse of current of T2=350 μs (with admittance ±10 %. Results. The results of evaluation calculation and experimental researches of electro-thermal resistibility of the indicated pre-production sheet models are resulted measuring in the plan of 0,5 x 0,5 m from stainless steel are easily soiled the 12Х18Н10Т thickness of 1 mm to action on them of aperiodic impulse of current of short blow of artificial lightning with rationed PTP on the requirements of the International Standard IEC 62305-1-2010. In high current experiments amplitude of ImL of the aperiodic rationed impulse of current of artificial lightning of temporal form of T1/T2=15 μs/315 μs changed in the range of (100-184 кА. The integral of action of JL of impulse of current for I-IV of levels of protection of lightning of technical objects (TO numeral made from 2,32·106 А2·s to 7,88·106 А2·s, and the flowing through the

  15. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  16. Thin Film Microbatteries

    International Nuclear Information System (INIS)

    Dudney, Nancy J.

    2008-01-01

    Thin film batteries are built layer by layer by vapor deposition. The resulting battery is formed of parallel plates, much as an ordinary battery construction, just much thinner. The figure (Fig. 1) shows an example of a thin film battery layout where films are deposited symmetrically onto both sides of a supporting substrate. The full stack of films is only 10 to 15 (micro)m thick, but including the support at least doubles the overall battery thickness. When the support is thin, the entire battery can be flexible. At least six companies have commercialized or are very close to commercializing such all-solid-state thin film batteries and market research predicts a growing market and a variety of applications including sensors, RFID tags, and smarter cards. In principle with a large deposition system, a thin film battery might cover a square meter, but in practice, most development is targeting individual cells with active areas less than 25 cm 2 . For very small battery areas, 2 , microfabrication processes have been developed. Typically the assembled batteries have capacities from 0.1 to 5 mAh. The operation of a thin film battery is depicted in the schematic diagram (Fig. 2). Very simply, when the battery is allowed to discharge, a Li + ion migrates from the anode to the cathode film by diffusing through the solid electrolyte. When the anode and cathode reactions are reversible, as for an intercalation compound or alloy, the battery can be recharged by reversing the current. The difference in the electrochemical potential of the lithium determines the cell voltage. Most of the thin films used in current commercial variations of this thin film battery are deposited in vacuum chambers by RF and DC magnetron sputtering and by thermal evaporation onto unheated substrates. In addition, many publications report exploring a variety of other physical and chemical vapor deposition processes, such as pulsed laser deposition, electron cyclotron resonance sputtering, and

  17. Harvester Productivity for Row Thinning Loblolly Pine Plantations

    Science.gov (United States)

    James E. Granskog; Walter C. Anderson

    1980-01-01

    Tivo tree harvesters currently being used to thin southern pine plantations were evaluated to determine the effects of stand characteristics on machine productivity. Production rates for row thinning loblolly plantations are presented by stand age, site index, and stand density.

  18. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Duy Phong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Nguyen, Huu Truong [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Phan, Bach Thang [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Faculty of Materials Science, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Hoang, Van Dung [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam); Maenosono, Shinya [School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Tran, Cao Vinh, E-mail: tcvinh@hcmus.edu.vn [Laboratory of Advanced Materials, University of Science, Vietnam National University, HoChiMinh (Viet Nam)

    2015-05-29

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes.

  19. Influence of addition of indium and of post-annealing on structural, electrical and optical properties of gallium-doped zinc oxide thin films deposited by direct-current magnetron sputtering

    International Nuclear Information System (INIS)

    Pham, Duy Phong; Nguyen, Huu Truong; Phan, Bach Thang; Hoang, Van Dung; Maenosono, Shinya; Tran, Cao Vinh

    2015-01-01

    In this study, both gallium-doped zinc oxide (GZO) and indium-added gallium-doped zinc oxide (IGZO) thin films were deposited on commercial glasses by magnetron dc-sputtering in argon atmosphere. The crystal structure, electrical conductivity and optical transmission of as-deposited as well as post-annealed thin films of both GZO and IGZO were investigated for comparison. A small amount of indium introduced into GZO thin films had improved their polycrystalline structure and increased their electrical conductivity by over 29%. All obtained GZO and IGZO thin films have strong [002] crystalline direction, a characteristic orientation of ZnO thin films. Although post-annealed in air at high temperatures up to 500 °C, IGZO thin films still had very low sheet resistance of 6.6 Ω/□. Furthermore, they had very high optical transmission of over 80% in both visible and near-infrared regions. - Highlights: • Doping 0.1 at.% indium enhanced crystalline, electrical properties of GZO films. • The mobility of IGZO films was 25% higher than that of GZO films. • The IGZO films will be potential materials for transparent conducting electrodes

  20. Electrochemical Thinning for Anodic Aluminum Oxide and Anodic Titanium Oxide

    Energy Technology Data Exchange (ETDEWEB)

    Lee, In Hae; Jo, Yun Kyoung; Kim, Yong Tae; Tak, Yong Sug; Choi, Jin Sub [Inha University, Incheon (Korea, Republic of)

    2012-05-15

    For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

  1. Deposition and characterization of pulsed direct current magnetron sputtered Al{sub 95.5}Cr{sub 2.5}Si{sub 2} (N{sub 1-x}O{sub x}) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, H., E-mail: hossein.najafi@epfl.c [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Shetty, A.; Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015, Lausanne (Switzerland); Morstein, M. [Platit AG, Advanced Coating Systems, CH-2545 Selzach (Switzerland)

    2010-10-29

    Aluminum rich oxynitride thin films were prepared using pulsed direct current (DC) magnetron sputtering from an Al{sub 95.5}Cr{sub 2.5}Si{sub 2} (at.%) target. Two series of films were deposited at 400 {sup o}C and 650 {sup o}C by changing the O{sub 2}/(O{sub 2} + N{sub 2}) ratio in the reactive gas from 0% (pure nitrides) to 100% (pure oxides). The films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and nanoindentation. The results showed the existence of three different regions of microstructure and properties with respect to the oxygen concentration. For the samples deposited at 650 {sup o}C in the nitrogen rich region (O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 0.08), the formation of the h-AlN (002) and Al-N bond were confirmed by XRD and XPS measurements. The hardness of the films was around 30 GPa. In the intermediate region (0.08 {<=} O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 0.24), the presence of an amorphous structure and the shifting of the binding energies to lower values corresponding to non-stoichiometric compounds were observed and the hardness decreased to 12 GPa. The lowering of mechanical properties was attributed to the transition of the clean target to the reacted target under non-steady state deposition conditions. In the oxygen rich region (0.24 {<=} (O{sub 2}/(O{sub 2} + N{sub 2}) {<=} 1), the existence of {alpha}-Al{sub 2}O{sub 3}-(113), {alpha}-Al{sub 2}O{sub 3}-(116) and Al-O bonds confirmed the domination of this phase in this region of deposition and the hardness increased again to 30-35 GPa. Films deposited at 400 {sup o}C showed the same behavior except in the oxygen rich region, where hardness remains low at about 12-14 GPa.

  2. synthesis and optical characterization of acid-doped polyaniline thin

    African Journals Online (AJOL)

    HOD

    SYNTHESIS AND OPTICAL CHARACTERIZATION OF ACID-DOPED. POLYANILINE THIN .... MATERIALS AND METHODS .... Characterization of Se Doped Polyaniline”,Current. Applied ... with Silver Nanoparticles”, Advances in Materials.

  3. Designing shear-thinning

    Science.gov (United States)

    Nelson, Arif Z.; Ewoldt, Randy H.

    2017-11-01

    Design in fluid mechanics often focuses on optimizing geometry (airfoils, surface textures, microfluid channels), but here we focus on designing fluids themselves. The dramatically shear-thinning ``yield-stress fluid'' is currently the most utilized non-Newtonian fluid phenomenon. These rheologically complex materials, which undergo a reversible transition from solid-like to liquid-like fluid flow, are utilized in pedestrian products such as paint and toothpaste, but also in emerging applications like direct-write 3D printing. We present a paradigm for yield-stress fluid design that considers constitutive model representation, material property databases, available predictive scaling laws, and the many ways to achieve a yield stress fluid, flipping the typical structure-to-rheology analysis to become the inverse: rheology-to-structure with multiple possible materials as solutions. We describe case studies of 3D printing inks and other flow scenarios where designed shear-thinning enables performance remarkably beyond that of Newtonian fluids. This work was supported by Wm. Wrigley Jr. Company and the National Science Foundation under Grant No. CMMI-1463203.

  4. Review of thin film superconductivity

    International Nuclear Information System (INIS)

    Kihlstrom, K.E.

    1989-01-01

    Advances in thin film superconductivity are critical to the success of many proposed applications. The authors review several of the prominent techniques currently used to produce thin films of the high temperature superconductors including electron beam co-deposition, sputtering (both multiple and composite source configurations) and laser ablation. The authors look at the relevant parameters for each and evaluate the advantages and disadvantages of each technique. In addition, promising work on in situ oxidation is discussed. Also addressed are efforts to find optimum substrate materials and substrate buffer layers for various applications. The current state of the art for T c , J c and H c2 is presented for the yttrium, bismuth, and thallium compounds

  5. Can the Media Affect Us? Social Comparison, Self-Discrepancy, and the Thin Ideal

    Science.gov (United States)

    Bessenoff, Gayle R.

    2006-01-01

    The current study explored body image self-discrepancy as moderator and social comparison as mediator in the effects on women from thin-ideal images in the media. Female undergraduates (N = 112) with high and low body image self-discrepancy were exposed to advertisements either with thin women (thin ideal) or without thin women…

  6. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  7. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  8. Enhancement of magnetoresistance by inserting thin NiAl layers at the interfaces in Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag/Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} current-perpendicular-to-plane pseudo spin valves

    Energy Technology Data Exchange (ETDEWEB)

    Jung, J. W.; Sakuraba, Y., E-mail: Sakuraba.Yuya@nims.go.jp; Sasaki, T. T.; Hono, K. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Miura, Y. [National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan); Kyoto Institute of Technology, Electrical Engineering and Electronics, Kyoto 606-8585 (Japan)

    2016-03-07

    We have investigated the effects of insertion of a thin NiAl layer (≤0.63 nm) into a Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5} (CFGG)/Ag interface on the magnetoresistive properties in CFGG/Ag/CFGG current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudo spin valves (PSVs). First-principles calculations of ballistic transmittance clarified that the interfacial band matching at the (001)-oriented NiAl/CFGG interface is better than that at the (001)-Ag/CFGG interface. The insertion of 0.21-nm-thick NiAl layers at the Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}/Ag interfaces effectively improved the magnetoresistance (MR) output; the observed average and the highest MR ratio (ΔRA) are 62% (25 mΩ μm{sup 2}) and 77% (31 mΩ μm{sup 2}) at room temperature, respectively, which are much higher than those without NiAl insertion. Microstructural analysis using scanning transmission electron microscopy confirmed the existence of thin NiAl layers at the Ag interfaces with only modest interdiffusion even after annealing at 550 °C. The improvement of the interfacial spin-dependent scattering by very thin NiAl insertion can be a predominant reason for the enhancement of the MR output.

  9. Current state and perspectives for organo-halide perovskite solar cells. Part 1. Crystal structures and thin film formation, morphology, processing, degradation, stability improvement by carbon nanotubes. A review

    Directory of Open Access Journals (Sweden)

    Nigmat Ashurov

    2017-03-01

    Full Text Available The fundamental problems of the modern state of the studies of organic–inorganic organo-halide perovskites (OHP as basis for high efficiency thin film solar cells are discussed. Perovskite varieties and background properties are introduced. The chronology of development of the studies in this direction has been presented – structural aspects of these OHP perovskites, from early 2D to recent 3D MAPbI3 perovskites and important technological aspects of smooth thin film structure creation by various techniques, such as solvent engineering, spin- and dip - coating, vacuum deposition, cation exchange approach, nanoimprinting (particularly, a many-sided role of polymers. The most important theoretical problems such as electronic structure of lattice, impurity and defect states in pure and mixed perovskites, suppressed electron-hole recombination, extra-long lifetimes, and diffusion lengths are analyzed. Degradation effects associated with moisture and photo irradiation, as well as degradation of metallic electrodes to OHP solar cells have been considered. The application of carbon nanostructures: carbon nanotubes (CNT and graphene as stable semitransparent charge collectors to OHP perovskites is demonstrated on the example of original results of authors.

  10. The Effects of Bursty Bulk Flows on Global-Scale Current Systems

    Science.gov (United States)

    Yu, Y.; Cao, J.; Fu, H.; Lu, H.; Yao, Z.

    2017-12-01

    Using a global magnetospheric MHD model coupled with a kinetic ring current model, we investigate the effects of magnetotail dynamics, particularly the earthward bursty bulk flows (BBFs) produced by the tail reconnection, on the global-scale current systems. The simulation results indicate that after BBFs brake around X = -10 RE due to the dipolar "magnetic wall," vortices are generated on the edge of the braking region and inside the inner magnetosphere. Each pair of vortex in the inner magnetosphere disturbs the westward ring current to arc radially inward as well as toward high latitudes. The resultant pressure gradient on the azimuthal direction induces region-1 sense field-aligned component from the ring current, which eventually is diverted into the ionosphere at high latitudes, giving rise to a pair of field-aligned current (FAC) eddies in the ionosphere. On the edge of the flow braking region where vortices also emerge, a pair of region-1 sense FACs arises, diverted fromthe cross-tail duskward current, generating a substorm current wedge. This is again attributed to the increase of thermal pressure ahead of the bursty flows turning azimuthally. It is further found that when multiple BBFs, despite their localization, continually and rapidly impinge on the "wall," carrying sufficient tail plasma sheet population toward the Earth, they can lead to the formation of a new ring current. These results indicate the important role that BBFs play in bridging the tail and the inner magnetosphere ring current and bring new insight into the storm-substorm relation.

  11. Three-dimensional thermal simulations of thin solid carbon foils for charge stripping of high current uranium ion beams at a proposed new heavy-ion linac at GSI

    Directory of Open Access Journals (Sweden)

    N. A. Tahir

    2014-04-01

    Full Text Available This paper presents an extensive numerical study of heating of thin solid carbon foils by 1.4  MeV/u uranium ion beams to explore the possibility of using such a target as a charge stripper at the proposed new Gesellschaft für Schwerionenforschung high energy heavy–ion linac. These simulations have been carried out using a sophisticated 3D computer code that accounts for physical phenomena that are important in this problem. A variety of beam and target parameters have been considered. The results suggest that within the considered parameter range, the target will be severely damaged by the beam. Thus, a carbon foil stripper does not seem to be a reliable option for the future Gesellschaft für Schwerionenforschung high energy heavy–ion linac, in particular, at FAIR design beam intensities.

  12. Electron energization in the geomagnetic tail current sheet

    International Nuclear Information System (INIS)

    Lyons, L.R.

    1984-01-01

    Electron motion in the distant tail current sheet is evaluated and found to violate the guiding center approximation at energies > or approx. =100 eV. Most electrons within the energy range approx.10 -1 -10 2 keV that enter the current sheet become trapped within the magnetic field reversal region. These electrons then convect earthward and gain energy from the cross-tail electric field. If the energy spectrum of electrons entering the current sheet is similar to that of electrons from the boundary layer surrounding the magnetotail, the energy gain from the electric field produces electron energy spectra comparable to those observed in the earth's plasma sheet. Thus current sheet interactions can be a significant source of particles and energy for plasma sheet electrons as well as for plasma sheet ions. A small fraction of electrons within the current sheet has its pitch angles scattered so as to be ejected from the current sheet within the atmospheric loss cone. These electrons can account for the electron precipitation near the high-latitude boundary of energetic electrons, which is approximately isotropic in pitch angle up to at least several hundred keV. Current sheet interaction should cause approximately isotropic auroral precipitation up to several hundred keV energies, which extends to significantly lower latitudes for ions than for electrons in agreement with low-altitude satellite observations. Electron precipitation associated with diffuse aurora generally has a transition at 1-10 keV to anisotropic pitch angle distributions. Such electron precipitation cannot be explained by current sheet interactions, but it can be explained by pitch angle diffusion driven by plasma turbulence

  13. Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki Yeon; Lee, Jeong Soo

    2008-02-15

    This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

  14. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  15. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  16. Thin Solid Oxide Cell

    DEFF Research Database (Denmark)

    2010-01-01

    The present invention relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material, at least one metal and a catalyst...... material, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same. The present invention also relates to a thin and in principle unsupported solid oxide cell, comprising at least a porous anode layer, an electrolyte layer and a porous...... cathode layer, wherein the anode layer and the cathode layer comprise an electrolyte material and a catalyst material, wherein the electrolyte material is doper zirconia, and wherein the overall thickness of the thin reversible cell is about 150 [mu]m or less, and to a method for producing same...

  17. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  18. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  19. Thin Films in the Photovoltaic Industry

    International Nuclear Information System (INIS)

    Jaeger-Waldau, A.

    2008-03-01

    In the past years, the yearly world market growth rate for Photovoltaics was an average of more than 40%, which makes it one of the fastest growing industries at present. Business analysts predict the market volume to increase to 40 billion euros in 2010 and expect rising profit margins and lower prices for consumers at the same time. Today PV is still dominated by wafer based Crystalline Silicon Technology as the 'working horse' in the global market, but thin films are gaining market shares. For 2007 around 12% are expected. The current silicon shortage and high demand has kept prices higher than anticipated from the learning curve experience and has widened the windows of opportunities for thin film solar modules. Current production capacity estimates for thin films vary between 3 and 6 GW in 2010, representing a 20% market share for these technologies. Despite the higher growth rates for thin film technologies compared with the industry average, Thin Film Photovoltaic Technologies are still facing a number of challenges to maintain this growth and increase market shares. The four main topics which were discussed during the workshop were: Potential for cost reduction; Standardization; Recycling; Performance over the lifetime.

  20. Amperometric Noise at Thin Film Band Electrodes

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Heien, Michael L.; Taboryski, Rafael

    2012-01-01

    Background current noise is often a significant limitation when using constant-potential amperometry for biosensor application such as amperometric recordings of transmitter release from single cells through exocytosis. In this paper, we fabricated thin-film electrodes of gold and conductive...

  1. Reliability growth of thin film resistors contact

    Directory of Open Access Journals (Sweden)

    Lugin A. N.

    2010-10-01

    Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

  2. Rapidly cast crystalline thin sheet materials

    International Nuclear Information System (INIS)

    Warlimont, H.; Emmerich, K.

    1986-01-01

    The current state and progress of casting thin sheet and ribbons directly from the melt are reviewed. First, the solidification phenomena pertinent to the process are outlined. Subsequently, Fe-Si,l Fe-Si-Al, Fe-Nd-B, Ag-Cu-Ti, alloy steels, Ni superalloys and Si are treated as examples. Finally, the information available on process development is critically assessed

  3. Bilaterally Microstructured Thin Polydimethylsiloxane Film Production

    DEFF Research Database (Denmark)

    Vudayagiri, Sindhu; Yu, Liyun; Hassouneh, Suzan Sager

    2015-01-01

    Thin PDMS films with complex microstructures are used in the manufacturing of dielectric electro active polymer (DEAP) actuators, sensors and generators, to protect the metal electrode from large strains and to assure controlled actuation. The current manufacturing process at Danfoss Polypower A/...

  4. Thin film tritium dosimetry

    Science.gov (United States)

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  5. Characterizations of photoconductivity of graphene oxide thin films

    Directory of Open Access Journals (Sweden)

    Shiang-Kuo Chang-Jian

    2012-06-01

    Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

  6. Thinning 'Elstar' apple with benzyladenine

    NARCIS (Netherlands)

    Maas, F.M.

    2006-01-01

    ‘Elstar’, the main apple cultivar grown in the Netherlands, requires adequate thinning to reach marketable fruit sizes and to achieve regular yields by preventing alternate bearing. At the moment, chemical thinning of ‘Elstar’ is the only economically feasible way of thinning. Thinning by hand is

  7. Effect of manganese doping on remnant polarization and leakage current in (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 epitaxial thin films on SrTiO3

    Science.gov (United States)

    Abazari, M.; Akdoǧan, E. K.; Safari, A.

    2008-05-01

    Single phase, epitaxial, ⟨001⟩ oriented, undoped and 1mol% Mn-doped (K0.44,Na0.52,Li0.04)(Nb0.84,Ta0.10,Sb0.06)O3 thin films of 400nm thickness were synthesized on SrRuO3 coated SrTiO3. Such films exhibit well saturated hysteresis loops and have a spontaneous polarization (Ps) of 10μC /cm2, which is a 150% higher over the Ps of the undoped composition. The coercive field of 1mol% Mn doped films is 13kV/cm. Mn-doping results in three orders of magnitude decrease in leakage current above 50kV/cm electric field, which we attribute to the suppression of intrinsic p-type conductivity of undoped films by Mn donors.

  8. BDS thin film damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Thomas, Michael D.; Griffin, Andrew J.

    2008-10-01

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  9. Thin metal electrodes for semitransparent organic photovoltaics

    KAUST Repository

    Lee, Kyusung

    2013-08-01

    We demonstrate semitransparent organic photovoltaics (OPVs) based on thin metal electrodes and polymer photoactive layers consisting of poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester. The power conversion efficiency of a semitransparent OPV device comprising a 15-nm silver (Ag) rear electrode is 1.98% under AM 1.5-G illumination through the indium-tin-oxide side of the front anode at 100 mW/cm2 with 15.6% average transmittance of the entire cell in the visible wavelength range. As its thickness increases, a thin Ag electrode mainly influences the enhancement of the short circuit current density and fill factor. Its relatively low absorption intensity makes a Ag thin film a viable option for semitransparent electrodes compatible with organic layers. © 2013 ETRI.

  10. Optical thin film deposition

    International Nuclear Information System (INIS)

    Macleod, H.A.

    1979-01-01

    The potential usefulness in the production of optical thin-film coatings of some of the processes for thin film deposition which can be classified under the heading of ion-assisted techniques is examined. Thermal evaporation is the process which is virtually universally used for this purpose and which has been developed to a stage where performance is in almost all respects high. Areas where further improvements would be of value, and the possibility that ion-assisted deposition might lead to such improvements, are discussed. (author)

  11. Thin Film Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Zweibel, K.

    1998-11-19

    The motivation to develop thin film technologies dates back to the inception of photovoltaics. It is an idea based on achieving truly low-cost photovoltaics appropriate for mass production and energy significant markets. The key to the idea is the use of pennies worth of active materials. Since sunlight carries relatively little energy in comparison with combustion-based energy sources, photovoltaic (PV) modules must be cheap to produce energy that can be competitive. Thin films are presumed to be the answer to that low-cost requirement. But how cheap do they have to be? The following is an oversimplified analysis that allows some insight into this question.

  12. Thin films and nanomaterials

    International Nuclear Information System (INIS)

    Jayakumar, S.; Kannan, M.D.; Prasanna, S.

    2012-01-01

    The objective of this book is to disseminate the most recent research in Thin Films, Nanomaterials, Corrosion and Metallurgy presented at the International Conference on Advanced Materials (ICAM 2011) held in PSG College of Technology, Coimbatore, India during 12-16 December 2011. The book is a compilation of 113 chapters written by active researchers providing information and critical insights into the recent advancements that have taken place. Important new applications are possible today in the fields of microelectronics, opto-electronics, metallurgy and energy by the application of thin films on solid surfaces. Recent progress in high vacuum technology and new materials has a remarkable effect in thin film quality and cost. This has led to the development of new single or multi-layered thin film devices with diverse applications in a multitude of production areas, such as optics, thermal barrier coatings and wear protections, enhancing service life of tools and to protect materials against thermal and atmospheric influence. On the other hand, thin film process techniques and research are strongly related to the basic research activities in nano technology, an increasingly important field with countless opportunities for applications due to the emergence of new properties at the nanoscale level. Materials and structures that are designed and fabricated at the nano scale level, offer the potential to produce new devices and processes that may enhance efficiencies and reduce costs in many areas, as photovoltaic systems, hydrogen storage, fuel cells and solar thermal systems. In the book, the contributed papers are classified under two sections i) thin films and ii) nanomaterials. The thin film section includes single or multi layer conducting, insulating or semiconducting films synthesized by a wide variety of physical or chemical techniques and characterized or analyzed for different applications. The nanomaterials section deals with novel or exciting materials

  13. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  14. Intrinsic superspin Hall current

    Science.gov (United States)

    Linder, Jacob; Amundsen, Morten; Risinggârd, Vetle

    2017-09-01

    We discover an intrinsic superspin Hall current: an injected charge supercurrent in a Josephson junction containing heavy normal metals and a ferromagnet generates a transverse spin supercurrent. There is no accompanying dissipation of energy, in contrast to the conventional spin Hall effect. The physical origin of the effect is an antisymmetric spin density induced among transverse modes ky near the interface of the superconductor arising due to the coexistence of p -wave and conventional s -wave superconducting correlations with a belonging phase mismatch. Our predictions can be tested in hybrid structures including thin heavy metal layers combined with strong ferromagnets and ordinary s -wave superconductors.

  15. Low field leakage current on ultra-thin gate oxides after ion or electron beam irradiations; Courant de fuite aux champs faibles d'oxydes ultra-minces apres irradiations avec des faisceaux d'ions et d'electrons

    Energy Technology Data Exchange (ETDEWEB)

    Ceschia, M.; Paccagnella, A.; Sandrin, S. [Universita di Padova, Dipt. di Elettronica e Informatica, Padova (Italy); Paccagnella, A. [Istituto Nazionale per la Fisica della Materia, INFM, Unita di Padova (Italy); Ghidini, G. [ST-Microelectronics, Agrate Brianza (Italy); Wyss, J. [Universita di Padova, Dipt. di Fisica, Padova (Italy)

    1999-07-01

    In contemporary CMOS 0.25-{mu}m technologies, the MOS gate oxide (thickness {approx_equal} 5 nm) shows a low-field leakage current after radiation stresses, i.e. the radiation induced leakage current (RILC). RILC is generally attributed to a trap assisted tunneling (TAT) of electrons through neutral oxide traps generated by radiation stress. RILC has been investigated on ultra-thin oxides irradiated with 158 MeV {sup 28}Si ions or 8 MeV electrons. 3 main results are worth being quoted: 1) ion or electron beam irradiation can produce RILC with similar characteristics. Even the dose dependence of RILC is similar in the 2 cases, despite the large LET difference (about a factor of 10{sup +4}), 2) RILC is not a constant as a function of time, it tends to decrease when an oxide field (few MV/cm) is applied for (tens of) thousands seconds. On the other hand, RILC stays constant in devices kept at low bias, and 3) if a pulsed gate voltage is applied during irradiation, RILC is reduced with respect to the zero-field case. (A.C.)

  16. Investigating the crystal growth behavior of biodegradable polymer blend thin films using in situ atomic force microscopy

    CSIR Research Space (South Africa)

    Malwela, T

    2014-01-01

    Full Text Available This article reports the crystal growth behavior of biodegradable polylactide (PLA)/poly[(butylene succinate)-co-adipate] (PBSA) blend thin films using atomic force microscopy (AFM). Currently, polymer thin films have received increased research...

  17. Skyrmion based universal memory operated by electric current

    Energy Technology Data Exchange (ETDEWEB)

    Zang, Jiadong; Chien, Chia-Ling; Li, Yufan; Lake, Roger K.; Yin, Gen

    2017-09-26

    A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

  18. Implementing optimal thinning strategies

    Science.gov (United States)

    Kurt H. Riitters; J. Douglas Brodie

    1984-01-01

    Optimal thinning regimes for achieving several management objectives were derived from two stand-growth simulators by dynamic programming. Residual mean tree volumes were then plotted against stand density management diagrams. The results supported the use of density management diagrams for comparing, checking, and implementing the results of optimization analyses....

  19. Thin seam mining

    Energy Technology Data Exchange (ETDEWEB)

    Sikora, W [Politechnika Slaska, Gliwice (Poland). Instytut Mechanizacji Gornictwa

    1989-06-01

    Discusses thin seam mining in Poland and its prospects. There were 194 working faces in coal seams to 1.5 m thick in Poland in 1988. Of them, 115 fell on faces with powered supports, 79 on faces with SHC-40 and Valent props; 108 shearer loaders and 45 coal plows were used for longwall mining of thin coal seams. Drilling and blasting was used to mine 21 working faces. Longwall faces in seams to 1.0 m thick gave 2.0% coal output, faces in coal seams 1.01-1.5 m thick gave 12.2% of daily coal output of underground mining. Structure of daily coal output of faces in thin seams was the following: 52 faces below 300 t/day, 42 from 301-500 t/day, 63 from 501 to 1,000 t/day, 17 faces above 1,000 t/day. Prospects for increasing coal output of faces in thin seams are discussed. 7 refs.

  20. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  1. NMR characterization of thin films

    Science.gov (United States)

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  2. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  3. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  4. Nanocoatings and ultra-thin films technologies and applications

    CERN Document Server

    Tiginyanu, Ion

    2011-01-01

    Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

  5. Weak currents

    International Nuclear Information System (INIS)

    Leite Lopes, J.

    1976-01-01

    A survey of the fundamental ideas on weak currents such as CVC and PCAC and a presentation of the Cabibbo current and the neutral weak currents according to the Salam-Weinberg model and the Glashow-Iliopoulos-Miami model are given [fr

  6. Spin current

    CERN Document Server

    Valenzuela, Sergio O; Saitoh, Eiji; Kimura, Takashi

    2012-01-01

    In a new branch of physics and technology called spin-electronics or spintronics, the flow of electrical charge (usual current) as well as the flow of electron spin, the so-called 'spin current', are manipulated and controlled together. This book provides an introduction and guide to the new physics and application of spin current.

  7. Properties of superconducting thin-film microbridges

    International Nuclear Information System (INIS)

    Pei, S.S.

    1978-01-01

    This work reports investigations upon the dependences of critical current and current phase relation on the dimensions of a superconducting thin-film microbridge. A model has been developed upon the Volkov's hyperbolic bridges and the Zaitsev's boundary conditions to calculate the spatial variation of the order parameter for given bridge dimensions. The results indicate that the rigid boundary conditions are good approximations to narrow bridges (W much less than L) only. The critical current density of the bridge has been calculated also as a function of the bridge dimensions. It is found that the critical current density of small bridges is enhanced above its mean field critical value due to the proximity effects of the banks. Very good agreement is found between the calculated enhancement of the critical current density and the experimental results. Direct measurements have been made on the current phase relation of indium bridges with width smaller than 0.6 μm. The difficulties due to the extra phase shifts from the series thin film electrodes are overcome by a specially designed double loop configuration which has an extra low effective inductance. It is found that the current phase relation of small bridges (W,L, xi, the results agree with the predictions of rigid boundary calculations as expected by our model

  8. Analysis of US underground thin seam mining potential. Volume 1. Text. Final technical report, December 1978. [In thin seams

    Energy Technology Data Exchange (ETDEWEB)

    Pimental, R. A; Barell, D.; Fine, R. J.; Douglas, W. J.

    1979-06-01

    An analysis of the potential for US underground thin seam (< 28'') coal mining is undertaken to provide basic information for use in making a decision on further thin seam mining equipment development. The characteristics of the present low seam mines and their mining methods are determined, in order to establish baseline data against which changes in mine characteristics can be monitored as a function of time. A detailed data base of thin seam coal resources is developed through a quantitative and qualitative analysis at the bed, county and state level. By establishing present and future coal demand and relating demand to production and resources, the market for thin seam coal has been identified. No thin seam coal demand of significance is forecast before the year 2000. Current uncertainty as to coal's future does not permit market forecasts beyond the year 2000 with a sufficient level of reliability.

  9. Fusion welding of thin metal foils

    International Nuclear Information System (INIS)

    Casey, H.

    1975-01-01

    Aspects of fusion welding of thin metal foils are reviewed and the current techniques employed at LASL to join foils are described. Techniques for fusion welding approximately 0.025-mm-thick foils of copper, aluminum, and stainless steels have been developed using both electron beam and laser welding equipment. These techniques, together with the related aspects of joint design, tooling and fixturing, joint preparation, and modifications to the commercially available welding equipment, are included in the review. (auth)

  10. A conserved quantity in thin body dynamics

    Science.gov (United States)

    Hanna, J. A.; Pendar, H.

    2016-02-01

    Thin, solid bodies with metric symmetries admit a restricted form of reparameterization invariance. Their dynamical equilibria include motions with both rigid and flowing aspects. On such configurations, a quantity is conserved along the intrinsic coordinate corresponding to the symmetry. As an example of its utility, this conserved quantity is combined with linear and angular momentum currents to construct solutions for the equilibria of a rotating, flowing string, for which it is akin to Bernoulli's constant.

  11. The role of substorms in the formation of the ring current

    International Nuclear Information System (INIS)

    Rostoker, G.

    1996-01-01

    It has long been recognized that the formation of the terrestrial ring current is accompanied by strong substorm expansive phase activity in the auroral oval. While large amplitude substorm activity seems to be a prerequisite for ring current formation to take place, it has long been puzzling as to why some large amplitude substorm activity in the auroral oval is not associated with significant ring current development. In this paper I shall outline the basis for the renovated boundary layer dynamics model of magnetospheric substorms showing how the onset of the substorm expansive phase can be associated with a sudden decrease in shielding space charge in the region of the near-Earth plasma sheet threaded by Region 2 field-aligned currents. I shall suggest that an episode of sufficiently large southward IMF lasting over a sufficiently lengthy period of time can lead to a sequence of substorm expansive phases, each one being initiated closer to the Earth than the previous one. Each expansive phase is attributed to a sudden decrease in radially localized cross-tail current (viz. a decrease in shielding space charge) and with each onset the inner edge of the plasma sheet moves inward. The inductive electric field associated with each crosstail current decrease is responsible for the acceleration of already energetic particles to energies of significance for ring current formation. Only when the inner edge of the crosstail current is sufficiently close to the Earth do the acceleration processes associated with substorm onset produce a long lived ring current. copyright 1996 American Institute of Physics

  12. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  13. Effect of solution concentration on MEH-PPV thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    MEH-PPV thin films were prepared with a mixture of THF (tetrahydrofuran) solution deposited by spin coating method. The surface topology of MEH-PPV thin film were characterize by atomic force microscopy (AFM) and optical properties of absorption spectra were characterized by using Ultraviolet-visible-near-infrared (UV-Vis-NIR). The MEH-PPV concentration variation affects the surface and optical properties of the thin film where 0.5 mg/ml MEH-PPV concentration have a good surface topology provided the same film also gives the highest absorption coefficient were then deposited to a TiO2 thin film forming composite layer. The composite layer then shows low current flow of short circuit current of Isc = -5.313E-7 A.

  14. Field reversing magnetotail current sheets: earth, Venus, and Comet Giacobini-Zinner

    International Nuclear Information System (INIS)

    McComas, D.J.

    1986-09-01

    This dissertation examines the field reversing magnetotail current sheets at the earth, Venus, and Comet Giacobini-Zinner. In the near earth study a new analysis technique is developed to calculate the detailed current density distributions within the cross tail current sheet for the first time. This technique removes the effects of a variable sheet velocity by inverting intersatellite timings between the co-orbiting satellites ISEE-1 and -2. Case studies of three relatively geomagnetically quiet crossings are made; sheet thicknesses and peak current densities are ∼1-5 x 10 4 km and ∼5-50 nA/m 2 . Current density distributions reveal a high density central region, lower density shoulders, and considerable fine structure throughout. In the Venus study another new analysis technique is developed to reconstruct the average tail configuration from a correlation between field magnitude and draping angle in a large statistical data set. In the comet study, high resolution magnetic field and plasma electron data from the ICE traversal of Giacobini-Zinner are combined for the first time to determine the tail/current sheet geometry and calculate certain important but unmeasured local ion and upstream properties. Pressure balance across the tail gives ion temperatures and betas of ∼1.2 x 10 5 K and ∼40 in the center of the current sheet to ∼1 x 10 6 K and ∼3 in the outer lobes. Axial stress balance shows that the velocity shear upstream near the nucleus is >6 (∼1 at ICE), and that a region of strongly enhanced mass loading (ion source rate ∼24 times that upstream from lobes) exists upstream from the current sheet. The integrated downtail mass flux is ∼2.6 x 10 26 H 2 O+/sec, which is only ∼1% of the independently determined total cometary efflux. 79 refs., 37 figs

  15. A novel application of the CuI thin film for preparing thin copper nanowires

    International Nuclear Information System (INIS)

    Shi Shuo; Sun Jialin; Zhang Jianhong; Cao Yang

    2005-01-01

    We present a novel application of the CuI thin film for preparing thin copper nanowires under a direct current electric field (DCEF). The CuI thin film was used as a medium for transmitting cuprous ions during the growing process of copper nanowires. As electrodes are the source of cuprous ions, high-purity copper films were deposited on both ends of the CuI thin film. At 353 K, under whole solid condition, without any templates, and having applied a DCEF of 1.5x10 4 V/m, cuprous ions were generated at the anode and migrated towards the cathode through the CuI film. At the edge of the cathode, cuprous ions obtained electrons and congregated to form a disordered thin copper nanowires bundle. The SEM images showed that these copper nanowires were from 10 to 20 nm in diameter and several hundred nanometers in length. The effect of the electric field intensity and the growth temperature on the diameter of the nanowires was also studied

  16. Thin, Flexible Secondary Li-Ion Paper Batteries

    KAUST Repository

    Hu, Liangbing; Wu, Hui; La Mantia, Fabio; Yang, Yuan; Cui, Yi

    2010-01-01

    , flexible Li-ion batteries using paper as separators and free-standing carbon nanotube thin films as both current collectors. The current collectors and Li-ion battery materials are integrated onto a single sheet of paper through a lamination process

  17. Early lessons from commercial thinning in a 30-year-old Sitka Spruce-Western Hemlock forest.

    Science.gov (United States)

    Sarah E. Greene; William H. Emmingham

    1986-01-01

    A commercial thinning study was undertaken in a 30-year-old stand, pre-commercially thinned at 15 years of age, at Cascade Head Experimental Forest on the Oregon coast. Measurements obtained after three different thinning treatments are presented and include stand volume, basal area, current growth rate, scar damage, crown ratio, and sapwood radius. Method of...

  18. Current limiters

    Energy Technology Data Exchange (ETDEWEB)

    Loescher, D.H. [Sandia National Labs., Albuquerque, NM (United States). Systems Surety Assessment Dept.; Noren, K. [Univ. of Idaho, Moscow, ID (United States). Dept. of Electrical Engineering

    1996-09-01

    The current that flows between the electrical test equipment and the nuclear explosive must be limited to safe levels during electrical tests conducted on nuclear explosives at the DOE Pantex facility. The safest way to limit the current is to use batteries that can provide only acceptably low current into a short circuit; unfortunately this is not always possible. When it is not possible, current limiters, along with other design features, are used to limit the current. Three types of current limiters, the fuse blower, the resistor limiter, and the MOSFET-pass-transistor limiters, are used extensively in Pantex test equipment. Detailed failure mode and effects analyses were conducted on these limiters. Two other types of limiters were also analyzed. It was found that there is no best type of limiter that should be used in all applications. The fuse blower has advantages when many circuits must be monitored, a low insertion voltage drop is important, and size and weight must be kept low. However, this limiter has many failure modes that can lead to the loss of over current protection. The resistor limiter is simple and inexpensive, but is normally usable only on circuits for which the nominal current is less than a few tens of milliamperes. The MOSFET limiter can be used on high current circuits, but it has a number of single point failure modes that can lead to a loss of protective action. Because bad component placement or poor wire routing can defeat any limiter, placement and routing must be designed carefully and documented thoroughly.

  19. Microstructure of Thin Films

    Science.gov (United States)

    1990-02-07

    Proceedings, Thin film Technologies II, 652, 256-263, (1986) B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier, "In situ and air index measurements...34 SPIE Proceedings, "Optical Components and Systems", 805, 128 (1987) 11 B. Schmitt, J.P. Borgogno, G. Albrand and E. Pelletier. "In situ and air index...aT , m..a, lot,, o ,,f,02,d I4 k -1-1..... autocovariance lengths, less than 0.5 um, indicate that , 514n, ob0 o p’,Ofclllc....,,o,,oy0,1- agua sblrt

  20. Superconducting oxypnictide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Reisner, Andreas; Kidszun, Martin; Reich, Elke; Holzapfel, Bernhard; Schultz, Ludwig; Haindl, Silvia [IFW Dresden, Institute of Metallic Materials (Germany); Thersleff, Thomas [Uppsala University, Angstrom Laboratory (Sweden)

    2012-07-01

    We present an overview on the oxypnictide thin film preparation. So far, only LaAlO{sub 3} (001) single crystalline substrates provided a successful growth using pulsed laser deposition in combination with a post annealing process. Further experiments on the in-situ deposition will be reported. The structure of the films was investigated by X-ray diffractometry and transmission electron microscopy. Transport properties were measured with different applied fields to obtain a magnetic phase diagram for this new type of superconductor.

  1. Mechanics of Thin Films

    Science.gov (United States)

    1992-02-06

    and the second geometry was that of squat cylinders (diameter 6.4 mm, height 6.4 mm). These two geometries were tested in thermal shock tests, and a...milder [13]. More recently, Lau, Rahman and stressa nce ntrati, tha n films of lmalla rat ve spc Delale calculated the free edge singularity for stress...thickness of 3 mm); the second geometry was that As an example of the shielding effect of thin films, we of squat cylinders (diameter 6.4 mm, height 6.4

  2. Method for thinning specimen

    Science.gov (United States)

    Follstaedt, David M.; Moran, Michael P.

    2005-03-15

    A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

  3. Nanocomposite thin films for triggerable drug delivery.

    Science.gov (United States)

    Vannozzi, Lorenzo; Iacovacci, Veronica; Menciassi, Arianna; Ricotti, Leonardo

    2018-05-01

    Traditional drug release systems normally rely on a passive delivery of therapeutic compounds, which can be partially programmed, prior to injection or implantation, through variations in the material composition. With this strategy, the drug release kinetics cannot be remotely modified and thus adapted to changing therapeutic needs. To overcome this issue, drug delivery systems able to respond to external stimuli are highly desirable, as they allow a high level of temporal and spatial control over drug release kinetics, in an operator-dependent fashion. Areas covered: On-demand drug delivery systems actually represent a frontier in this field and are attracting an increasing interest at both research and industrial level. Stimuli-responsive thin films, enabled by nanofillers, hold a tremendous potential in the field of triggerable drug delivery systems. The inclusion of responsive elements in homogeneous or heterogeneous thin film-shaped polymeric matrices strengthens and/or adds intriguing properties to conventional (bare) materials in film shape. Expert opinion: This Expert Opinion review aims to discuss the approaches currently pursued to achieve an effective on-demand drug delivery, through nanocomposite thin films. Different triggering mechanisms allowing a fine control on drug delivery are described, together with current challenges and possible future applications in therapy and surgery.

  4. Thin-Film Power Transformers

    Science.gov (United States)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  5. Thin-film photovoltaic technology

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharya, R.N. [National Renewable Energy Laboratory, Golden, CO (United States)

    2010-07-01

    The high material and processing costs associated with single-crystal and polycrystalline silicon wafers that are commonly used in photovoltaic cells render these modules expensive. This presentation described thin-film solar cell technology as a promising alternative to silicon solar cell technology. Cadmium telluride (CdTe) thin films along with copper, indium, gallium, and selenium (CIGS) thin films have become the leaders in this field. Their large optical absorption coefficient can be attributed to a direct energy gap that allows the use of thin layers (1-2 {mu}m) of active material. The efficiency of thin-film solar cell devices based on CIGS is 20 per cent, compared to 16.7 per cent for thin-film solar cell devices based on CdTe. IBM recently reported an efficiency of 9.7 per cent for a new type of inorganic thin-film solar cell based on a Cu{sub 2}ZnSn(S, Se){sub 4} compound. The efficiency of an organic thin-film solar cell is 7.9 per cent. This presentation included a graph of PV device efficiencies and discussed technological advances in non-vacuum deposited, CIGS-based thin-film solar cells. 1 fig.

  6. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  7. Deposition of thin layers of boron nitrides and hydrogenated microcrystalline silicon assisted by high current direct current arc plasma; Deposition assistee par un plasma a arc a haut courant continu de couches minces de Nitrure de Bore et de Silicium microcristallin hydrogene

    Energy Technology Data Exchange (ETDEWEB)

    Franz, D. [Ecole Polytechnique Federale de Lausanne, Centre de Recherches en Physique des Plasmas (CRPP), CH-1015 Lausanne (Switzerland)

    1999-09-01

    In the frame of this thesis, a high current direct current arc (HCDCA) used for the industrial deposition of diamond, has been adapted to study the deposition of two types of coatings: a) boron nitride, whose cubic phase is similar to diamond, for tribological applications, b) hydrogenated microcrystalline silicon, for applications in the semiconductor fields (flat panel displays, solar cells,...). For the deposition of these coatings, the substrates were placed in the diffusion region of the arc. The substrate heating is mainly due to atomic species recombining on its surface. The deposition temperature, varying from 300 to 900 {sup o}C according to the films deposited, is determined by the substrate position, the arc power and the injected gas fluxes, without the use of any external heating or cooling system. Measurements performed on the arc plasma show that the electronic temperature is around 2 eV (23'000 K) while the gas temperature is lower than 5500 K. Typical electronic densities are in the range of 10{sup 12}-10{sup 1'}3 cm{sup -3}. For the deposition of boron nitride films, different boron precursors were used and a wide parameter range was investigated. The extreme difficulty of synthesising cubic boron nitride films by chemical vapour deposition (CVD) did not allow to stabilize the cubic phase of boron nitride in HCDCA. Coatings resulted in hexagonal or amorphous boron nitride with a chemical composition close to stoichiometric. The presence of hydrogen leads to the deposition of rough and porous films. Negative biasing of the samples, for positive ion bombardment, is commonly used to stabilize the cubic phase. In HCDCA and in our biasing range, only a densification of the films could be observed. A boron nitride deposition plasma study by infrared absorption spectroscopy in a capacitive radio frequency reactor has demonstrated the usefulness of this diagnostic for the understanding of the various chemical reactions which occur in this kind

  8. Tin oxide transparent thin-film transistors

    International Nuclear Information System (INIS)

    Presley, R E; Munsee, C L; Park, C-H; Hong, D; Wager, J F; Keszler, D A

    2004-01-01

    A SnO 2 transparent thin-film transistor (TTFT) is demonstrated. The SnO 2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O 2 at 600 deg. C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm 2 V -1 s -1 and 2.0 cm 2 V -1 s -1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10 5 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications

  9. A conserved quantity in thin body dynamics

    International Nuclear Information System (INIS)

    Hanna, J.A.; Pendar, H.

    2016-01-01

    Thin, solid bodies with metric symmetries admit a restricted form of reparameterization invariance. Their dynamical equilibria include motions with both rigid and flowing aspects. On such configurations, a quantity is conserved along the intrinsic coordinate corresponding to the symmetry. As an example of its utility, this conserved quantity is combined with linear and angular momentum currents to construct solutions for the equilibria of a rotating, flowing string, for which it is akin to Bernoulli's constant. - Highlights: • A conserved quantity relevant to the dynamical equilibria of thin structures. • A mixed Lagrangian–Eulerian non-material action principle for fixed windows of axially moving systems. • Analytical solutions for rotating, flowing strings (yarn balloons). • Noether meets Bernoulli in a textile factory.

  10. A conserved quantity in thin body dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, J.A., E-mail: hannaj@vt.edu [Department of Biomedical Engineering and Mechanics, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States); Pendar, H. [Department of Biomedical Engineering and Mechanics, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061 (United States)

    2016-02-15

    Thin, solid bodies with metric symmetries admit a restricted form of reparameterization invariance. Their dynamical equilibria include motions with both rigid and flowing aspects. On such configurations, a quantity is conserved along the intrinsic coordinate corresponding to the symmetry. As an example of its utility, this conserved quantity is combined with linear and angular momentum currents to construct solutions for the equilibria of a rotating, flowing string, for which it is akin to Bernoulli's constant. - Highlights: • A conserved quantity relevant to the dynamical equilibria of thin structures. • A mixed Lagrangian–Eulerian non-material action principle for fixed windows of axially moving systems. • Analytical solutions for rotating, flowing strings (yarn balloons). • Noether meets Bernoulli in a textile factory.

  11. Thermoelectric effects of amorphous Ga-Sn-O thin film

    Science.gov (United States)

    Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

    2017-07-01

    The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

  12. Thin layer activation

    International Nuclear Information System (INIS)

    Schweickert, H.; Fehsenfeld, P.

    1995-01-01

    The reliability of industrial equip ment is substantially influenced by wear and corrosion; monitoring can prevent accidents and avoid down-time. One powerful tool is thin layer activation analysis (TLA) using accelerator systems. The information is used to improve mechanical design and material usage; the technology is used by many large companies, particularly in the automotive industry, e.g. Daimler Benz. A critical area of a machine component receives a thin layer of radioactivity by irradiation with charged particles from an accelerator - usually a cyclotron. The radioactivity can be made homogeneous by suitable selection of particle, beam energy and angle of incidence. Layer thickness can be varied from 20 microns to around 1 mm with different depth distributions; the position and size of the wear zone can be set to within 0.1 mm. The machine is then reassembled and operated so that wear can be measured. An example is a combustion engine comprising piston ring, cylinder wall, cooling water jacket and housing wall, where wear measurements on the cylinder wall are required in a critical zone around the dead-point of the piston ring. Proton beam bombardment creates a radioactive layer whose thickness is known accurately, and characteristic gamma radiation from this radioactive zone penetrates through the engine and is detected externally. Measurements can be made either of the activity removed from the surface, or of the (reduced) residual activity; wear measurement of the order of 10 -9 metres is possible

  13. Surface scattering mechanisms of tantalum nitride thin film resistor.

    Science.gov (United States)

    Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

    2014-01-01

    In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

  14. Unidirectional oxide hetero-interface thin-film diode

    International Nuclear Information System (INIS)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee; Kim, Youn Sang

    2015-01-01

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10 5 at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10 2  Hz < f < 10 6  Hz, providing a high feasibility for practical applications

  15. Unidirectional oxide hetero-interface thin-film diode

    Energy Technology Data Exchange (ETDEWEB)

    Park, Youngmin; Lee, Eungkyu; Lee, Jinwon; Lim, Keon-Hee [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Kim, Youn Sang, E-mail: younskim@snu.ac.kr [Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul 151-742 (Korea, Republic of); Advanced Institute of Convergence Technology, Gyeonggi-do 443-270 (Korea, Republic of)

    2015-10-05

    The unidirectional thin-film diode based on oxide hetero-interface, which is well compatible with conventional thin-film fabrication process, is presented. With the metal anode/electron-transporting oxide (ETO)/electron-injecting oxide (EIO)/metal cathode structure, it exhibits that electrical currents ohmically flow at the ETO/EIO hetero-interfaces for only positive voltages showing current density (J)-rectifying ratio of ∼10{sup 5} at 5 V. The electrical properties (ex, current levels, and working device yields) of the thin-film diode (TFD) are systematically controlled by changing oxide layer thickness. Moreover, we show that the oxide hetero-interface TFD clearly rectifies an AC input within frequency (f) range of 10{sup 2} Hz < f < 10{sup 6} Hz, providing a high feasibility for practical applications.

  16. Internalization of the ultra-thin ideal: positive implicit associations with underweight fashion models are associated with drive for thinness in young women.

    Science.gov (United States)

    Ahern, Amy L; Bennett, Kate M; Hetherington, Marion M

    2008-01-01

    This study examined whether young women who make implicit associations between underweight models and positive attributes report elevated eating disorder symptoms. Ninety nine female undergraduates completed a weight based implicit association test (IAT) and self report measures of body dissatisfaction, thin-ideal internalization and eating disorder symptoms. IAT scores were associated with drive for thinness (r = -0.26, p fashion and being attractive. The IAT used in the current study is sensitive enough to discriminate between participants on drive for thinness. Women who have developed cognitive schemas that associate being underweight with positive attributes report higher eating disorder symptoms. Attitude importance is highlighted as a key construct in thin ideal internalization.

  17. Effects of electron pressure anisotropy on current sheet configuration

    International Nuclear Information System (INIS)

    Artemyev, A. V.; Angelopoulos, V.; Runov, A.; Vasko, I. Y.

    2016-01-01

    Recent spacecraft observations in the Earth's magnetosphere have demonstrated that the magnetotail current sheet can be supported by currents of anisotropic electron population. Strong electron currents are responsible for the formation of very thin (intense) current sheets playing the crucial role in stability of the Earth's magnetotail. We explore the properties of such thin current sheets with hot isotropic ions and cold anisotropic electrons. Decoupling of the motions of ions and electrons results in the generation of a polarization electric field. The distribution of the corresponding scalar potential is derived from the electron pressure balance and the quasi-neutrality condition. We find that electron pressure anisotropy is partially balanced by a field-aligned component of this polarization electric field. We propose a 2D model that describes a thin current sheet supported by currents of anisotropic electrons embedded in an ion-dominated current sheet. Current density profiles in our model agree well with THEMIS observations in the Earth's magnetotail.

  18. Electrochemical Deposition of Lanthanum Telluride Thin Films and Nanowires

    Science.gov (United States)

    Chi, Su (Ike); Farias, Stephen; Cammarata, Robert

    2013-03-01

    Tellurium alloys are characterized by their high performance thermoelectric properties and recent research has shown nanostructured tellurium alloys display even greater performance than bulk equivalents. Increased thermoelectric efficiency of nanostructured materials have led to significant interests in developing thin film and nanowire structures. Here, we report on the first successful electrodeposition of lanthanum telluride thin films and nanowires. The electrodeposition of lanthanum telluride thin films is performed in ionic liquids at room temperature. The synthesis of nanowires involves electrodepositing lanthanum telluride arrays into anodic aluminum oxide (AAO) nanoporous membranes. These novel procedures can serve as an alternative means of simple, inexpensive and laboratory-environment friendly methods to synthesize nanostructured thermoelectric materials. The thermoelectric properties of thin films and nanowires will be presented to compare to current state-of-the-art thermoelectric materials. The morphologies and chemical compositions of the deposited films and nanowires are characterized using SEM and EDAX analysis.

  19. Neutral currents

    International Nuclear Information System (INIS)

    Paschos, E.A.

    1977-01-01

    It is stated that over the past few years considerable progress has been made in the field of weak interactions. The existence of neutral currents involving leptons and hadrons has been established and some of the questions concerning their detailed structure have been answered. This imposes constraints on the gauge theories and has eliminated large classes of models. New questions have also been raised, one of which concerns the conservation laws obeyed by neutral currents. The wide range of investigations is impressive and is expected to continue with new results from particle, nuclear, and atomic physics. Headings include - various aspects of a gauge theory (choice of group, the symmetry breaking scheme, representation assignments for fermion fields); space-time structure; isospin structure; leptonic neutral currents; and atomic experiments. (U.K.)

  20. Neutral currents

    International Nuclear Information System (INIS)

    Aubert, B.

    1994-11-01

    The evidence for the existence of weak neutral current has been a very controverted topics in the early 1970's, as well as the muon did in the 1930's. The history is very rich considering the evolution of the experimental techniques in high energy particle physics. The history of the discovery and the study of weak neutral current is reviewed. Later the quest of the intermediate vector boson continues with the decision of the community to build a large proton antiproton collider. (K.A.). 14 refs., 1 fig

  1. Chemical thinning of 'Conference' pears

    NARCIS (Netherlands)

    Maas, F.M.; Kanne, H.J.; Steeg, van der P.A.H.

    2010-01-01

    The increasing difference in the market value of small and larger sized ‘Conference’ pears (>65 mm) and the high labour costs for hand thinning, makes it interesting for growers to find a cheaper and reliable method for thinning pear trees. In 2007, 2008 and 2009 trials were carried out to test

  2. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  3. Cylindrical thin-shell wormholes

    International Nuclear Information System (INIS)

    Eiroa, Ernesto F.; Simeone, Claudio

    2004-01-01

    A general formalism for the dynamics of nonrotating cylindrical thin-shell wormholes is developed. The time evolution of the throat is explicitly obtained for thin-shell wormholes whose metric has the form associated with local cosmic strings. It is found that the throat collapses to zero radius, remains static, or expands forever, depending only on the sign of its initial velocity

  4. Current algebra

    International Nuclear Information System (INIS)

    Jacob, M.

    1967-01-01

    The first three chapters of these lecture notes are devoted to generalities concerning current algebra. The weak currents are defined, and their main properties given (V-A hypothesis, conserved vector current, selection rules, partially conserved axial current,...). The SU (3) x SU (3) algebra of Gell-Mann is introduced, and the general properties of the non-leptonic weak Hamiltonian are discussed. Chapters 4 to 9 are devoted to some important applications of the algebra. First one proves the Adler- Weisberger formula, in two different ways, by either the infinite momentum frame, or the near-by singularities method. In the others chapters, the latter method is the only one used. The following topics are successively dealt with: semi leptonic decays of K mesons and hyperons, Kroll- Ruderman theorem, non leptonic decays of K mesons and hyperons ( ΔI = 1/2 rule), low energy theorems concerning processes with emission (or absorption) of a pion or a photon, super-convergence sum rules, and finally, neutrino reactions. (author) [fr

  5. Current Titles

    Energy Technology Data Exchange (ETDEWEB)

    Various

    2006-06-01

    This booklet is published for those interested in current research being conducted at the National Center for Electron Microscopy. The NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers. Access is controlled by an external steering committee. Interested researchers may contact Jane Cavlina, Administrator, at 510/486-6036.

  6. Current scenario

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Current scenario. India , like other parts of the world, is also facing the problem of increase in the incidence of drug resistance in tuberculosis. Multi-drug resistance (MDR, resistance to RIF & INH) and extensively drug resistant strains (X-DR, resistance to RIF, INH, FQs ...

  7. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  8. The religion of thinness

    Directory of Open Access Journals (Sweden)

    Michelle Lelwica

    2011-01-01

    Full Text Available This paper examines the almost religious-like devotion of especially women in pursuing the goal of a thinner body. The quest for a slender body is analysed as a ‘cultural religion’, which the author calls the ‘Religion of Thinness’. The analysis revolves around four observations. The first is that for many women in the US today, the quest for a slender body serves what has historically been a ‘religious’ function: providing a sense of purpose that orients and gives meaning to their lives, especially in times of suffering and uncertainty. Second, this quest has many features in common with traditional religions, including beliefs, myths, rituals, moral codes, and sacred images—all of which encourage women to find ‘salvation’ (i.e., happiness and well-being through the pursuit of a ‘better’ (i.e., thinner body.Third, this secular faith draws so many adherents in large part because it appeals to and addresses what might be referred to as spiritual needs—including the need for a sense of purpose, inspiration, security, virtue, love, and well-being—even though it shortchanges these needs, and, in the long run, fails to deliver the salvation it promises. Fourth, a number of traditional religious ideas, paradigms and motifs tacit­ly inform and support the Religion of Thinness. More specifically, its soteri­ology resurrects and recycles the misogynist, anti-body, other-worldly, and exclusivist aspects of patriarchal religion. Ultimately, the analysis is not only critical of the Religion of Thinness; it also raises suspicions about any clear-cut divisions between ‘religion’, ‘culture’, and ‘the body’. In fact, examining the functions, features, and ideologies embedded in this secular devotion gives us insight into the constitutive role of the body in the production and apprehension of religious and cultural meanings.

  9. NIF-Scale Hohlraum Asymmetry Studies Using Point-Projection Radiograph of Thin Shells

    International Nuclear Information System (INIS)

    Pollaine, S.; Bradley, D.; Landen, O.; Wallace, R.; Jones, O.

    2000-01-01

    Our current OMEGA experimental campaign is developing the thin shell diagnostic for use on NIF with the needed accuracy. The thin shell diagnostic has the advantage of linearity over alternative measurement techniques, so that low-order modes will not corrupt the measurement of high-order modes. Although our random measurement errors are adequate, we need to monitor beam balance and ensure that the thin shells have a uniform thickness

  10. Transient Analysis of Lumped Circuit Networks Loaded Thin Wires By DGTD Method

    KAUST Repository

    Li, Ping

    2016-03-31

    With the purpose of avoiding very fine mesh cells in the proximity of a thin wire, the modified telegrapher’s equations (MTEs) are employed to describe the thin wire voltage and current distributions, which consequently results in reduced number of unknowns and augmented Courant-Friedrichs-Lewy (CFL) number. As hyperbolic systems, both the MTEs and the Maxwell’s equations are solved by the discontinuous Galerkin time-domain (DGTD) method. In realistic situations, the thin wires could be either driven or loaded by circuit networks. The thin wire-circuit interface performs as a boundary condition for the thin wire solver, where the thin wire voltage and current used for the incoming flux evaluation involved in the DGTD analyzed MTEs are not available. To obtain this voltage and current, an auxiliary current flowing through the thin wire-circuit interface is introduced at each interface. Corresponding auxiliary equations derived from the invariable property of characteristic variable for hyperbolic systems are developed and solved together with the circuit equations established by the modified nodal analysis (MNA) modality. Furthermore, in order to characterize the field and thin wire interactions, a weighted electric field and a volume current density are added into the MTEs and Maxwell-Ampere’s law equation, respectively. To validate the proposed algorithm, three representative examples are presented.

  11. Transient Analysis of Lumped Circuit Networks Loaded Thin Wires By DGTD Method

    KAUST Repository

    Li, Ping; Shi, Yifei; Jiang, Li Jun; Bagci, Hakan

    2016-01-01

    With the purpose of avoiding very fine mesh cells in the proximity of a thin wire, the modified telegrapher’s equations (MTEs) are employed to describe the thin wire voltage and current distributions, which consequently results in reduced number of unknowns and augmented Courant-Friedrichs-Lewy (CFL) number. As hyperbolic systems, both the MTEs and the Maxwell’s equations are solved by the discontinuous Galerkin time-domain (DGTD) method. In realistic situations, the thin wires could be either driven or loaded by circuit networks. The thin wire-circuit interface performs as a boundary condition for the thin wire solver, where the thin wire voltage and current used for the incoming flux evaluation involved in the DGTD analyzed MTEs are not available. To obtain this voltage and current, an auxiliary current flowing through the thin wire-circuit interface is introduced at each interface. Corresponding auxiliary equations derived from the invariable property of characteristic variable for hyperbolic systems are developed and solved together with the circuit equations established by the modified nodal analysis (MNA) modality. Furthermore, in order to characterize the field and thin wire interactions, a weighted electric field and a volume current density are added into the MTEs and Maxwell-Ampere’s law equation, respectively. To validate the proposed algorithm, three representative examples are presented.

  12. A multisatellite case study of the expansion of a substorm current wedge in the near-Earth magnetotail

    International Nuclear Information System (INIS)

    Lopez, R.E.; Lui, A.T.Y.

    1990-01-01

    This study presents observations made by four spacecraft (AMPTE CCE, AMPTE IRM, GOES 5, and GOES 6) and two ground stations (San Juan and Tucson) during a substorm that occurred at ∼0830 UT on April 19, 1985. The spacecraft were arrayed in a configuration that allows for the examination of the spatial evolution of the substorm current wedge, CCE was located between the GOES spacecraft in longitude, but at a radial distance of 8.0 R E . IRM was located west of the other three spacecraft in the same sector as Tucson, but at a radial distance of 11.6 R E . The relative times at which the signature of the substorm current wedge was first observed at the GOES spacecraft and the ground stations are consistent with a simple longitudinally expanding current wedge. However, the times at which IRM and CCE observed the current wedge are not consistent with a current wedge that expanded only longitudinally, IRM first observed the signature of the current wedge at about the same time the signature was observed by GOES 6 and Tucson, and CCE observed the current wedge only after both GOES satellites and the ground stations had done so. Moreover, both GOES spacecraft observed signatures consistent with entry into the central plasma sheet before CCE and IRM did, even though we estimate that CCE was slightly closer to the neutral sheet than the geosynchronous spacecraft. The sequence of events suggests that during this substorm the disruption of the cross-tail current sheet, the formation of the substorm current wedge, and the expansion of the plasma sheet began in the near-Earth region, and subsequently spread tailward as well as longitudinally

  13. Basic characteristics of thin wire arc plasma

    International Nuclear Information System (INIS)

    Urushihara, K.; Endoh, N.; Ono, S.; Teii, S.; Ishimura, T.

    1998-01-01

    The investigated plasma was generated by applying an electric current of about 50 A to a copper wire of 48 μm diameter in air. The development in time of emission spectra was measured and relative line intensity ratios were used to determine the temperature. The extension of the plasma was measured with a movable electrostatic probe which was placed next to the thin wire, and the electron density was estimated using the known electron mobility. The electron temperature was typically about 8000 K. On the other hand, the electron density tended to decrease with time from about 3.10 16 cm -3

  14. The APS thin pulsed septum magnets

    International Nuclear Information System (INIS)

    Lopez, F.; Mills, F.; Milton, S.; Reeves, S.; Sheynin, S.; Thompson, K.; Turner, L.

    1994-01-01

    A thin (2-mm) eddy-current pulsed septum magnet was developed for use in the Advanced Photon Source (APS) machines. A number of different configurations of the magnet were assembled and tested in an effort to minimize the undesired leakage field in the stored-beam region. However, because of measured excessive leakage fields, an alternative direct-drive septum magnet was also constructed and tested. We present here the design specifications and acceptable performance criteria along with results of magnetic field measurements

  15. More About Thin-Membrane Biosensor

    Science.gov (United States)

    Case, George D.; Worley, Jennings F., III

    1994-01-01

    Report presents additional information about device described in "Thin-Membrane Sensor With Biochemical Switch" (MFS-26121). Device is modular sensor that puts out electrical signal indicative of chemical or biological agent. Signal produced as membrane-crossing ion current triggered by chemical reaction between agent and recognition protein conjugated to channel blocker. Prototype of biosensor useful in numerous laboratory, industrial, or field applications; such as to detect bacterial toxins in food, to screen for disease-producing micro-organisms, or to warn of toxins or pollutants in air.

  16. Thin film solar cell technology in Germany

    International Nuclear Information System (INIS)

    Diehl, W.; Sittinger, V.; Szyszka, B.

    2005-01-01

    Within the scope of limited nonrenewable energy resources and the limited capacity of the ecosystem for greenhouse gases and nuclear waste, sustainability is one important target in the future. Different energy scenarios showed the huge potential for photovoltaics (PV) to solve this energy problem. Nevertheless, in the last decade, PV had an average growth rate of over 20% per year. In 2002, the solar industry delivered more than 500 MWp/year of photovoltaic generators [A. Jaeger-Waldau, A European Roadmap for PV R and D, E-MRS Spring Meeting, (2003)]. More than 85% of the current production involves crystalline silicon technologies. These technologies still have a high cost reduction potential, but this will be limited by the silicon feedstock. On the other hand the so-called second generation thin film solar cells based on a-Si, Cu(In,Ga)(Se,S 2 (CIGS) or CdTe have material thicknesses of a few microns as a result of their direct band gap. Also, the possibility of circuit integration offers an additional cost reduction potential. Especially in Germany, there are a few companies who focus on thin film solar cells. Today, there are two manufacturers with production lines: the Phototronics (PST) division of RWE-Schott Solar with a-Si thin film technology and the former Antec Solar GmbH (now Antec Solar Energy GmbH) featuring the CdTe technology. A pilot line based on CIGS technology is run by Wuerth Solar GmbH. There is also a variety of research activity at other companies, namely, at Shell Solar, Sulfurcell Solartechnik GmbH, Solarion GmbH and the CIS-Solartechnik GmbH. We will give an overview on research activity on various thin film technologies, as well as different manufacturing and production processes in the companies mentioned above. (Author)

  17. Thin-film Rechargeable Lithium Batteries for Implantable Devices

    Science.gov (United States)

    Bates, J. B.; Dudney, N. J.

    1997-05-01

    Thin films of LiCoO{sub 2} have been synthesized in which the strongest x ray reflection is either weak or missing, indicating a high degree of preferred orientation. Thin film solid state batteries with these textured cathode films can deliver practical capacities at high current densities. For example, for one of the cells 70% of the maximum capacity between 4.2 V and 3 V ({approximately}0.2 mAh/cm{sup 2}) was delivered at a current of 2 mA/cm{sup 2}. When cycled at rates of 0.1 mA/cm{sup 2}, the capacity loss was 0.001%/cycle or less. The reliability and performance of Li LiCoO{sub 2} thin film batteries make them attractive for application in implantable devices such as neural stimulators, pacemakers, and defibrillators.

  18. Magnesium Diboride Current Leads

    Science.gov (United States)

    Panek, John

    2010-01-01

    A recently discovered superconductor, magnesium diboride (MgB2), can be used to fabricate conducting leads used in cryogenic applications. Dis covered to be superconducting in 2001, MgB2 has the advantage of remaining superconducting at higher temperatures than the previously used material, NbTi. The purpose of these leads is to provide 2 A of electricity to motors located in a 1.3 K environment. The providing environment is a relatively warm 17 K. Requirements for these leads are to survive temperature fluctuations in the 5 K and 11 K heat sinks, and not conduct excessive heat into the 1.3 K environment. Test data showed that each lead in the assembly could conduct 5 A at 4 K, which, when scaled to 17 K, still provided more than the required 2 A. The lead assembly consists of 12 steelclad MgB2 wires, a tensioned Kevlar support, a thermal heat sink interface at 4 K, and base plates. The wires are soldered to heavy copper leads at the 17 K end, and to thin copper-clad NbTi leads at the 1.3 K end. The leads were designed, fabricated, and tested at the Forschungszentrum Karlsruhe - Institut foer Technische Physik before inclusion in Goddard's XRS (X-Ray Spectrometer) instrument onboard the Astro-E2 spacecraft. A key factor is that MgB2 remains superconducting up to 30 K, which means that it does not introduce joule heating as a resistive wire would. Because the required temperature ranges are 1.3-17 K, this provides a large margin of safety. Previous designs lost superconductivity at around 8 K. The disadvantage to MgB2 is that it is a brittle ceramic, and making thin wires from it is challenging. The solution was to encase the leads in thin steel tubes for strength. Previous designs were so brittle as to risk instrument survival. MgB2 leads can be used in any cryogenic application where small currents need to be conducted at below 30 K. Because previous designs would superconduct only at up to 8 K, this new design would be ideal for the 8-30 K range.

  19. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  20. Current awareness.

    Science.gov (United States)

    Compagno, C; Brambilla, L; Capitanio, D; Boschi, F; Ranzi, B M; Porro, D

    2001-05-01

    In order to keep subscribers up-to-date with the latest developments in their field, this current awareness service is provided by John Wiley & Sons and contains newly-published material on yeasts. Each bibliography is divided into 10 sections. 1 Books, Reviews & Symposia; 2 General; 3 Biochemistry; 4 Biotechnology; 5 Cell Biology; 6 Gene Expression; 7 Genetics; 8 Physiology; 9 Medical Mycology; 10 Recombinant DNA Technology. Within each section, articles are listed in alphabetical order with respect to author. If, in the preceding period, no publications are located relevant to any one of these headings, that section will be omitted. (4 weeks journals - search completed 7th Mar. 2001)

  1. Current titles

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-07-01

    This booklet is published for those interested in current research being conducted at the National Center for Electron Microscopy. The NCEM is a DOE-designated national user facility and is available at no charge to qualified researchers. Access is controlled by an external steering committee. Interested researchers may contact Gretchen Hermes at (510) 486-5006 or address below for a User`s Guide. Copies of available papers can be ordered from: Theda Crawford National Center for Electron Microscopy, Lawrence Berkeley Laboratory, One Cyclotron Rd., MS72, Berkeley, California, USA 94720.

  2. Interfaces and thin films physics

    International Nuclear Information System (INIS)

    Equer, B.

    1988-01-01

    The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described [fr

  3. Thin-film solar cells

    International Nuclear Information System (INIS)

    Aberle, Armin G.

    2009-01-01

    The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed. While amorphous silicon based PV modules have been around for more than 20 years, recent industrial developments include the first polycrystalline silicon thin-film solar cells on glass and the first tandem solar cells based on stacks of amorphous and microcrystalline silicon films ('micromorph cells'). Significant thin-film PV production levels are also being set up for cadmium telluride and copper indium diselenide.

  4. Low resistivity molybdenum thin film towards the back contact of dye ...

    Indian Academy of Sciences (India)

    Abstract. This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering ...

  5. Current ornithology

    CERN Document Server

    1983-01-01

    The appearance of the first volume of a projected series is the occasion for comment on scope, aims, and genesis of the work. The scope of Current Ornithology is all of the biology of birds. Ornithology, as a whole-organism science, is concerned with birds at every level of bi­ ological organization, from the molecular to the community, at least from the Jurassic to the present time, and over every scholarly discipline in which bird biology is done; to say this is merely to expand a dic­ tionary definition of "ornithology. " The aim of the work, to be realized over several volumes, is to present reviews or position statements con­ cerning the active fields of ornithological research. The reviews will be relatively short, and often will be done from the viewpoint of a readily­ identified group or school. Such a work could have come into being at any time within the past fifty years, but that Current Ornithology appears now is a result of events that are only seven to eight years old. One important event wa...

  6. Polymer Thin Film Stabilization.

    Science.gov (United States)

    Costa, A. C.; Oslanec, R.; Composto, R. J.; Vlcek, P.

    1998-03-01

    We study the dewetting dynamics of thin polystyrene (PS) films deposited on silicon oxide surfaces using optical (OM) and atomic force (AFM) microscopes. Quantitative analysis of the hole diameter as a function of annealing time at 175^oC shows that blending poly(styrene-block-methyl-methacrylate) (PS-b-PMMA) with PS acts to dramatically slow down the dewetting rate and even stops holes growth before they impinge. AFM studies show that the hole floor is smooth for a pure PS film but contains residual polymer for the blend. At 5% vol., a PS-b-PMMA with high molar mass and low PMMA is a more effective stabilizing agent than a low molar mass/high PMMA additive. The optimum copolymer concentration is 3% vol. beyond which film stability doesn't improve. Although dewetting is slowed down relative to pure PS, PS/PS-b-PMMA bilayers dewet at a faster rate than blends having the same overall additive concentration.

  7. Resistivity behavior of optimized PbTiO3 thin films prepared by spin coating method

    Science.gov (United States)

    Nurbaya, Z.; Wahid, M. H.; Rozana, M. D.; Alrokayan, S. A. H.; Khan, H. A.; Rusop, M.

    2018-05-01

    Th is study presents the resistivity behavior of PbTiO3 thin films which were prepared towards metal-insulator-metal capacitor device fabrication. The PbTiO3 thin films were prepared through sol-gel spin coating method that involved various deposition parameters that is (1) different molar concentration of PbTiO3 solutions, (2) various additional PbAc-content in PbTiO3 solutions, and (3) various annealing temperature on PbTiO3 thin films. Hence, an electrical measurement of current versus voltage was done to determine the resistivity behavior of PbTiO3 thin films.

  8. Toroidal current asymmetry in tokamak disruptions

    Science.gov (United States)

    Strauss, H. R.

    2014-10-01

    It was discovered on JET that disruptions were accompanied by toroidal asymmetry of the toroidal plasma current I ϕ. It was found that the toroidal current asymmetry was proportional to the vertical current moment asymmetry with positive sign for an upward vertical displacement event (VDE) and negative sign for a downward VDE. It was observed that greater displacement leads to greater measured I ϕ asymmetry. Here, it is shown that this is essentially a kinematic effect produced by a VDE interacting with three dimensional MHD perturbations. The relation of toroidal current asymmetry and vertical current moment is calculated analytically and is verified by numerical simulations. It is shown analytically that the toroidal variation of the toroidal plasma current is accompanied by an equal and opposite variation of the toroidal current flowing in a thin wall surrounding the plasma. These currents are connected by 3D halo current, which is π/2 radians out of phase with the n = 1 toroidal current variations.

  9. Thin pentacene layer under pressure

    International Nuclear Information System (INIS)

    Srnanek, R.; Jakabovic, J.; Kovac, J.; Donoval, D.; Dobrocka, E.

    2011-01-01

    Organic semiconductors have got a lot of interest during the last years, due to their usability for organic thin film transistor. Pentacene, C 22 H 14 , is one of leading candidates for this purpose. While we obtain the published data about pressure-induced phase transition only on single crystal of pentacene we present pressure-induced phase transition in pentacene thin layers for the first time. Changes in the pentacene structure, caused by the pressure, were detected by micro-Raman spectroscopy. Applying the defined pressure to the pentacene layer it can be transformed from thin phase to bulk phase. Micro-Raman spectroscopy was found as useful method for detection of changes and phases identification in the pentacene layer induced by mechanical pressure. Such a pressure-induced transformation of pentacene thin layers was observed and identified for the first time. (authors)

  10. Characterization of organic thin films

    CERN Document Server

    Ulman, Abraham; Evans, Charles A

    2009-01-01

    Thin films based upon organic materials are at the heart of much of the revolution in modern technology, from advanced electronics, to optics to sensors to biomedical engineering. This volume in the Materials Characterization series introduces the major common types of analysis used in characterizing of thin films and the various appropriate characterization technologies for each. Materials such as Langmuir-Blodgett films and self-assembled monolayers are first introduced, followed by analysis of surface properties and the various characterization technologies used for such. Readers will find detailed information on: -Various spectroscopic approaches to characterization of organic thin films, including infrared spectroscopy and Raman spectroscopy -X-Ray diffraction techniques, High Resolution EELS studies, and X-Ray Photoelectron Spectroscopy -Concise Summaries of major characterization technologies for organic thin films, including Auger Electron Spectroscopy, Dynamic Secondary Ion Mass Spectrometry, and Tra...

  11. Thin-needle aspiration biopsy of the prostate.

    Science.gov (United States)

    Koss, L G; Woyke, S; Schreiber, K; Kohlberg, W; Freed, S Z

    1984-05-01

    The authors summarize the current status of thin-needle aspiration biopsy of the prostate and evaluate the accomplishments and limitations of this method of diagnosis. Historical developments, indications, technique, contraindications, complications, cytology of aspirates, diagnostic efficacy of aspirates, and grading of prostatic carcinomas are discussed.

  12. Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

    Directory of Open Access Journals (Sweden)

    Deepu Thomas

    2014-01-01

    Full Text Available ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002 orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

  13. Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

    Science.gov (United States)

    Ahmed, Moinuddin; Butler, Donald P.

    2015-07-01

    Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

  14. Research progress of VO2 thin film as laser protecting material

    Science.gov (United States)

    Liu, Zhiwei; Lu, Yuan; Hou, Dianxin

    2018-03-01

    With the development of laser technology, the battlefield threat of directional laser weapons is becoming more and more serious. The blinding and destruction caused by laser weapons on the photoelectric equipment is an important part of the current photo-electronic warfare. The research on the defense technology of directional laser weapons based on the phase transition characteristics of VO2 thin films is an important subject. The researches of VO2 thin films are summarized based on review these points: the preparation methods of VO2 thin films, phase transition mechanism, phase transition temperature regulating, interaction between VO2 thin films and laser, and the application prospect of vo2 thin film as laser protecting material. This paper has some guiding significance for further research on the VO2 thin films in the field of defense directional laser weapons.

  15. Thin film femtosecond laser damage competition

    Science.gov (United States)

    Stolz, Christopher J.; Ristau, Detlev; Turowski, Marcus; Blaschke, Holger

    2009-10-01

    In order to determine the current status of thin film laser resistance within the private, academic, and government sectors, a damage competition was started at the 2008 Boulder Damage Symposium. This damage competition allows a direct comparison of the current state of the art of high laser resistance coatings since they are tested using the same damage test setup and the same protocol. In 2009 a high reflector coating was selected at a wavelength of 786 nm at normal incidence at a pulse length of 180 femtoseconds. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials and layer count, and spectral results will also be shared.

  16. Fluxons in thin-film superconductor-insulator superlattices

    DEFF Research Database (Denmark)

    Sakai, S.; Bodin, P.; Pedersen, Niels Falsig

    1993-01-01

    In a system of thin alternating layers of superconductors and insulators the equations describing static and dynamic fluxon solutions are derived. The approach, represented by a useful compact matrix form, is intended to describe systems fabricated for example of niobium or niobium-nitride thin...... films; in the limit of ultrathin superconductor films it may give a model for describing fluxon motion in layered high-Tc superconductors. Numerical examples of current versus voltage curves to be expected in such an experiment are presented. Journal of Applied Physics is copyrighted by The American...

  17. Microwave Josephson generation in thin film superconducting bridges

    International Nuclear Information System (INIS)

    Gubankov, V.N.; Koshelets, V.P.; Ovsyannikov, G.A.

    1975-01-01

    Thin-film bridges have some advantage over other types of superconducting weak links: good definition of electromagnetic parameters and of weak region geometry. Up to now Josephson properties of bridges have been investigated by using indirect methods (the effect of magnetic field on the critical current I 0 , the bridge behavior in a microwave field, etc.). Direct experimental observation of Josephson radiation from autonomous thin film bridges is reported. Microwave radiation in tin bridges of 'variable' thickness has been investigated where the thickness of the film forming the bridge is far less than the thickness of the bank films. (Auth.)

  18. Thin, Flexible Secondary Li-Ion Paper Batteries

    KAUST Repository

    Hu, Liangbing

    2010-10-26

    There is a strong interest in thin, flexible energy storage devices to meet modern society needs for applications such as interactive packaging, radio frequency sensing, and consumer products. In this article, we report a new structure of thin, flexible Li-ion batteries using paper as separators and free-standing carbon nanotube thin films as both current collectors. The current collectors and Li-ion battery materials are integrated onto a single sheet of paper through a lamination process. The paper functions as both a mechanical substrate and separator membrane with lower impedance than commercial separators. The CNT film functions as a current collector for both the anode and the cathode with a low sheet resistance (∼5 Ohm/sq), lightweight (∼0.2 mg/cm2), and excellent flexibility. After packaging, the rechargeable Li-ion paper battery, despite being thin (∼300 μm), exhibits robust mechanical flexibility (capable of bending down to <6 mm) and a high energy density (108 mWh/g). © 2010 American Chemical Society.

  19. Superconducting thin films

    International Nuclear Information System (INIS)

    Hebard, A.F.; Vandenberg, J.M.

    1982-01-01

    This invention relates to granular metal and metal oxide superconducting films formed by ion beam sputter deposition. Illustratively, the films comprise irregularly shaped, randomly oriented, small lead grains interspersed in an insulating lead oxide matrix. The films are hillock-resistant when subjected to thermal cycling and exhibit unusual josephson-type switching characteristics. Depending on the oxygen content, a film may behave in a manner similar to that of a plurality of series connected josephson junctions, or the film may have a voltage difference in a direction parallel to a major surface of the film that is capable of being switched from zero voltage difference to a finite voltage difference in response to a current larger than the critical current

  20. Photoluminescence and cathodoluminescence properties of green emitting SrGa2{S}4 : Eu2+ thin film

    Science.gov (United States)

    Chartier, Céline; Benalloul, Paul; Barthou, Charles; Frigerio, Jean-Marc; Mueller, Gerd O.; Mueller-Mach, Regina; Trottier, Troy

    2002-02-01

    Photoluminescence and cathodoluminescence properties of SrGa2S4 : Eu2+ thin films prepared by reactive RF magnetron sputtering are investigated. Luminescence performances of the phosphor in the thin film form are compared to those of powder samples: the brightness efficiency of thin films is found to be about 30% of the efficiency of powder at low current density. A ratio higher than 40% is expected at higher current density. Thin film screens for FEDs will become a positive alternative to powder screens provided that film quality and light extraction could be improved by optimization of thickness and deposition parameters.

  1. Electromagnetic properties of thin film lead superconductors

    International Nuclear Information System (INIS)

    Moriyama, K.

    1978-01-01

    The dependence of critical film magnetic field H/sub cf/ on temperature, thickness, and surface texture of lead superconducting films was investigated, as well as the relationship between the applied magnetic field and the applied current at the critical field. Temperature and thickness dependence data were consistent with the predictions of London, of Ginzburg, and of Bardeen, Cooper, and Schreiffer. The values of H/sub cf/ of lead films deposited on a rough surface were consistently lower than for those on a smooth surface and so were not in agreement with any currently accepted theory. The degree of lowering of H/sub cf/ by a rough surface was greater in thin films than in thick films. The expected dependence of penetration depth lambda on thickness d was not observed, and the range of lambda was somewhat greater than expected. The range of coherence length was greater than predicted. The prediction for temperature dependence of critical current by Glover and Coffey was found to involve some oversimplification, and a suggested correction is supported by the data. For applied magnetic fields perpendicular to the applied current and parallel to the film surface, the relationship between the critical values of the magnetic field and the current was as predicted for lead films by Alphonse and Bergstein

  2. Detecting Super-Thin Clouds With Polarized Light

    Science.gov (United States)

    Sun, Wenbo; Videen, Gorden; Mishchenko, Michael I.

    2014-01-01

    We report a novel method for detecting cloud particles in the atmosphere. Solar radiation backscattered from clouds is studied with both satellite data and a radiative transfer model. A distinct feature is found in the angle of linear polarization of solar radiation that is backscattered from clouds. The dominant backscattered electric field from the clear-sky Earth-atmosphere system is nearly parallel to the Earth surface. However, when clouds are present, this electric field can rotate significantly away from the parallel direction. Model results demonstrate that this polarization feature can be used to detect super-thin cirrus clouds having an optical depth of only 0.06 and super-thin liquid water clouds having an optical depth of only 0.01. Such clouds are too thin to be sensed using any current passive satellite instruments.

  3. Solar cell fabricated on welded thin flexible silicon

    Directory of Open Access Journals (Sweden)

    Hessmann Maik Thomas

    2015-01-01

    Full Text Available We present a thin-film crystalline silicon solar cell with an AM1.5 efficiency of 11.5% fabricated on welded 50 μm thin silicon foils. The aperture area of the cell is 1.00 cm2. The cell has an open-circuit voltage of 570 mV, a short-circuit current density of 29.9 mA cm-2 and a fill factor of 67.6%. These are the first results ever presented for solar cells on welded silicon foils. The foils were welded together in order to create the first thin flexible monocrystalline band substrate. A flexible band substrate offers the possibility to overcome the area restriction of ingot-based monocrystalline silicon wafers and the feasibility of a roll-to-roll manufacturing. In combination with an epitaxial and layer transfer process a decrease in production costs can be achieved.

  4. NbN thin films for superconducting radio frequency cavities

    Science.gov (United States)

    Roach, W. M.; Skuza, J. R.; Beringer, D. B.; Li, Z.; Clavero, C.; Lukaszew, R. A.

    2012-12-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m-1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed.

  5. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  6. Thin film microelectrodes for electrochemical detection of neurotransmitters

    DEFF Research Database (Denmark)

    Larsen, Simon Tylsgaard

    An important signaling process in the nervous system is the release of chemical messengers called neurotransmitters from neurons. In this thesis alternative thin film electrode materials for applications targeting electrochemical detection of neurotransmitters in chip devices were evaluated...... and conductive polymer microelectrodes made of Pedot:Pss were also fabricated and used successfully to measure transmitter release from cells. The use of different thin film electrodes for low-noise amperometric measurements of single events of transmitter release from neuronal cells was studied....... For this application a very low current noise is needed together with a large temporal resolution. It was shown, that resistive and capacitive properties of thin film electrode materials are determining their usefulness in low-noise amperometric measurements. An analytical expression for the noise was derived...

  7. NbN thin films for superconducting radio frequency cavities

    International Nuclear Information System (INIS)

    Roach, W M; Clavero, C; Lukaszew, R A; Skuza, J R; Beringer, D B; Li, Z

    2012-01-01

    NbN thin films have the potential to be incorporated into radio frequency cavities in a multilayer coating to overcome the fundamental field gradient limit of 50 MV m −1 for the bulk niobium based technology that is currently implemented in particle accelerators. In addition to having a larger critical field value than bulk niobium, NbN films develop smoother surfaces which are optimal for cavity performance and lead to fewer losses. Here, we present a study on the correlation of film deposition parameters, surface morphology, microstructure, transport properties and superconducting properties of NbN thin films. We have achieved films with bulk-like lattice parameters and superconducting transition temperatures. These NbN films have a lower surface roughness than similarly grown niobium films of comparable thickness. The potential application of NbN thin films in accelerator cavities is discussed. (paper)

  8. Final report for EMP instrumentation project DNA IACRO 75-815: magnetic thin film sensors

    International Nuclear Information System (INIS)

    Hsieh, E.J.; Miller, D.E.; Vindelov, K.E.; Brown, T.G.

    1975-01-01

    The magnetic thin film current sensor/recorder is a passive device which responds to the peak current and pulse shape of a transient event. The transient current information becomes a permanent record on the film. The thin film device is small, low mass and reusable. It has been proven to be fast (less than 1/2 nanosecond response), radiation hard and applicable to peak current measurement of both CW and pulsed signals. The sensors were initially developed at LLL for pulse-energy measurement on exploding wires. Later the Defense Nuclear Agency sponsored the present project to develop the magnetic thin film devices as EMP diagnostic tools. The Air Force Weapons Lab supported the work to test the field capabilities of the thin film devices at ARES test facility, Kirtland AFB. Sandia Lab is now using a new version of the thin film sensors to monitor the transient current induced by intense radiation in their hybrid microcircuits. Also, a field test has been planned with Naval Electronics Laboratory Center where the thin film sensors are to be used to measure peak CW current caused by rf radiation. Research results are summarized

  9. Magnetic characterisation of longitudinal thin film media

    International Nuclear Information System (INIS)

    Dova, P.

    1998-09-01

    Magnetic characterisation techniques, as applied to longitudinal thin film media, have been investigated. These included the study of the differentials of the remanence curves, the delta-M plot and the examination of the critical volumes. Several thin film structures, which are currently used or are being considered for future media applications, have been examined using these techniques. Most of the films were Co-alloys with the exception of a set of Barium ferrite films. Both monolayer and multilayer structures were studied. It was found that the study of activation volumes provides a better insight into the reversal mechanisms of magnetic media, especially in the case of complex structures such as multilayer films and films with bicrystal microstructure. Furthermore, an evaluation study of different methods of determining critical volumes showed that the method using time dependence measurements and the micromagnetic approach is the most appropriate. The magnetic characteristics of the thin film media under investigation were correlated with their microstructure and, where possible, with their noise performance. Magnetic force microscopy was also used for acquiring quasi-domain images in the ac-demagnetised state. It was found that in all Co-alloy films the dominant intergranular coupling is magnetising in nature, the level of which is governed by the Cr content in the magnetic layer. In the case of laminated media it was found that when non-magnetic spacers are used, the nature of the interlayer coupling depends on the spacer thickness. In double layer structures with no spacer, the top layer replicates the crystallographic texture of the bottom layer, and the overall film properties are a combination of the two layers. In bicrystal films the coupling is determined by the Cr segregation in the grain boundaries. Furthermore, the presence of stacking faults in bicrystal films deteriorates their thermal stability, but can be prevented by improving the epitaxial

  10. Development of thin-film Si HYBRID solar module

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Akihiko; Gotoh, Masahiro; Sawada, Toru; Fukuda, Susumu; Yoshimi, Masashi; Yamamoto, Kenji; Nomura, Takuji [Kaneka Corporation, 2-1-1, Hieitsuji, Otsu, Shiga 520-0104 (Japan)

    2009-06-15

    The device current-voltage (I-V) characteristics of thin-film silicon stacked tandem solar modules (HYBRID modules), consisting of a hydrogenated amorphous silicon (a-Si:H) cell and a thin-film crystalline silicon solar cell ({mu}c-Si), have been investigated under various spectral irradiance distributions. The performance of the HYBRID module varied periodically in natural sunlight due to the current-limiting property of the HYBRID module and the environmental effects. The behavior based on the current-limiting property was demonstrated by the modelling of the I-V curves using the linear interpolation method for each component cell. The improvement of the performance for the HYBRID module in natural sunlight will also be discussed from the viewpoint of the device design of the component cells. (author)

  11. Thermochemical hydrogen generation of indium oxide thin films

    Directory of Open Access Journals (Sweden)

    Taekyung Lim

    2017-03-01

    Full Text Available Development of alternative energy resources is an urgent requirement to alleviate current energy constraints. As such, hydrogen gas is gaining attention as a future alternative energy source to address existing issues related to limited energy resources and air pollution. In this study, hydrogen generation by a thermochemical water-splitting process using two types of In2O3 thin films was investigated. The two In2O3 thin films prepared by chemical vapor deposition (CVD and sputtering deposition systems contained different numbers of oxygen vacancies, which were directly related to hydrogen generation. The as-grown In2O3 thin film prepared by CVD generated a large amount of hydrogen because of its abundant oxygen vacancies, while that prepared by sputtering had few oxygen vacancies, resulting in low hydrogen generation. Increasing the temperature of the In2O3 thin film in the reaction chamber caused an increase in hydrogen generation. The oxygen-vacancy-rich In2O3 thin film is expected to provide a highly effective production of hydrogen as a sustainable and efficient energy source.

  12. Thin films for precision optics

    International Nuclear Information System (INIS)

    Araujo, J.F.; Maurici, N.; Castro, J.C. de

    1983-01-01

    The technology of producing dielectric and/or metallic thin films for high precision optical components is discussed. Computer programs were developed in order to calculate and register, graphically, reflectance and transmittance spectra of multi-layer films. The technology of vacuum evaporation of several materials was implemented in our thin-films laboratory; various films for optics were then developed. The possibility of first calculate film characteristics and then produce the film is of great advantage since it reduces the time required to produce a new type of film and also reduces the cost of the project. (C.L.B.) [pt

  13. Superconducting properties of iron chalcogenide thin films

    Directory of Open Access Journals (Sweden)

    Paolo Mele

    2012-01-01

    Full Text Available Iron chalcogenides, binary FeSe, FeTe and ternary FeTexSe1−x, FeTexS1−x and FeTe:Ox, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i easy fabrication and epitaxial growth on common single-crystal substrates; (ii strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe0.5Se0.5, zero-resistance transition temperature Tc0bulk = 13.5 K, but Tc0film = 19 K on LaAlO3 substrate; (iii high critical current density (Jc ~ 0.5 ×106 A cm2 at 4.2 K and 0 T for FeTe0.5Se0.5 film deposited on CaF2, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition with a weak dependence on magnetic field; (iv high upper critical field (~50 T for FeTe0.5Se0.5, Bc2(0, with a low anisotropy, γ ~ 2. These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T and low temperatures (2–10 K.

  14. EMAT Evaluation of Thin Conductive Sheets

    Directory of Open Access Journals (Sweden)

    Ivo Cap

    2006-01-01

    Full Text Available At present a non-destructive testing of conducting materials becomes very important one in connection with monitoring and control of strategic technical facilities, e.g. nuclear power plants. There are more methods of material testing and evaluation and every of them has its advantages and disadvantages. Recently the electromagnetic methods are in increasing interest. There are many ways of conducting material testing. One of them often used utilises investigation of eddy currents induced in the surface layer by means of a proper coil. The arrangement is very simple and inexpensive but it offers only local information on cracks and other inhomogeneities in the thin surface layer. On the other hand there exist a method based on an electromagnetic – acoustic transducer (EMAT, which is able to generate and detect acoustic wave in a conducting body in a contact-less way. The present paper deals with a survey of EMATs for investigation of thin metalliclayers by means of Lamb waves. The new design of generation coil is presented.

  15. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  16. Radiation hardness of thin Low Gain Avalanche Detectors

    Science.gov (United States)

    Kramberger, G.; Carulla, M.; Cavallaro, E.; Cindro, V.; Flores, D.; Galloway, Z.; Grinstein, S.; Hidalgo, S.; Fadeyev, V.; Lange, J.; Mandić, I.; Medin, G.; Merlos, A.; McKinney-Martinez, F.; Mikuž, M.; Quirion, D.; Pellegrini, G.; Petek, M.; Sadrozinski, H. F.-W.; Seiden, A.; Zavrtanik, M.

    2018-05-01

    Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5 ṡ 1015 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

  17. Capillary thinning of polymeric filaments

    DEFF Research Database (Denmark)

    Kolte, Mette Irene; Szabo, Peter

    1999-01-01

    The capillary thinning of filaments of a Newtonian polybutene fluid and a viscoelastic polyisobutylene solution are analyzed experimentally and by means of numerical simulation. The experimental procedure is as follows. Initially, a liquid sample is placed between two cylindrical plates. Then, th...

  18. Stability of charged thin shells

    International Nuclear Information System (INIS)

    Eiroa, Ernesto F.; Simeone, Claudio

    2011-01-01

    In this article we study the mechanical stability of spherically symmetric thin shells with charge, in Einstein-Maxwell and Einstein-Born-Infeld theories. We analyze linearized perturbations preserving the symmetry, for shells around vacuum and shells surrounding noncharged black holes.

  19. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  20. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    Science.gov (United States)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  1. Semiconductor-nanocrystal/conjugated polymer thin films

    Science.gov (United States)

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  2. Nanocrystal thin film fabrication methods and apparatus

    Science.gov (United States)

    Kagan, Cherie R.; Kim, David K.; Choi, Ji-Hyuk; Lai, Yuming

    2018-01-09

    Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.

  3. Growth, Properties and Applications of Mo Ox Thin-Films Deposited by Reactive Sputtering

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis

    properties of metal-oxide thin films through surface defect engineering is vital to fine-tune their optoelectronic properties, and thus also their integration in novel optoelectronic devices. In this work, MoOx thin-films with various different phases and compositions were prepared by direct-current reactive...... molecules DBP and C70 are also covered in this work. The devices show interesting characteristics for very thin layers of the as-deposited MoOx films, displaying similar device efficiencies as those of in situ prepared MoOx thin-films formed from thermal evaporation. For the annealed MoOx films......Transition metal-oxide (TMOs) thin-films are commonly used in optoelectronic devices such as in photovoltaics and light emitting diodes, using both organic, inorganic and hybrid technologies. In such devices, TMOs typically act as an interfacial layer, where its functionality is to facilitate hole...

  4. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    Science.gov (United States)

    Habermeier, H.-U.

    2008-10-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  5. Strategies towards controlling strain-induced mesoscopic phase separation in manganite thin films

    International Nuclear Information System (INIS)

    Habermeier, H-U

    2008-01-01

    Complex oxides represent a class of materials with a plethora of fascinating intrinsic physical functionalities. The intriguing interplay of charge, spin and orbital ordering in these systems superimposed by lattice effects opens a scientifically rewarding playground for both fundamental as well as application oriented research. The existence of nanoscale electronic phase separation in correlated complex oxides is one of the areas in this field whose impact on the current understanding of their physics and potential applications is not yet clear. In this paper this issue is treated from the point of view of complex oxide thin film technology. Commenting on aspects of complex oxide thin film growth gives an insight into the complexity of a reliable thin film technology for these materials. Exploring fundamentals of interfacial strain generation and strain accommodation paves the way to intentionally manipulate thin film properties. Furthermore, examples are given for an extrinsic continuous tuning of intrinsic electronic inhomogeneities in perovskite-type complex oxide thin films.

  6. Matérn thinned Cox processes

    DEFF Research Database (Denmark)

    Andersen, Ina Trolle; Hahn, Ute

    2016-01-01

    and hard core behaviour can be achieved by applying a dependent Matérn thinning to a Cox process. An exact formula for the intensity of a Matérn thinned shot noise Cox process is derived from the Palm distribution. For the more general class of Matérn thinned Cox processes, formulae for the intensity...

  7. Matérn thinned Cox processes

    DEFF Research Database (Denmark)

    Andersen, Ina Trolle; Hahn, Ute

    of clustering and hard core behaviour can be achieved by applying a dependent Matérn thinning to a Cox process. An exact formula for the intensity of a Matérn thinned shot noise Cox process is derived from the Palm distribution. For the more general class of Matérn thinned Cox processes, formulae...

  8. Ultra-thin chip technology and applications

    CERN Document Server

    2010-01-01

    Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

  9. Hall effect of K-doped superconducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Son, Eunseon; Lee, Nam Hoon; Kang, Won Nam [Dept. of physics, Sungkyunkwan University, Suwon (Korea, Republic of); Hwang, Tae Jong; Kim, Dong Ho [Dept. of physics, Yeungnam University, Gyeongsan(Korea, Republic of)

    2013-09-15

    We have studied Hall effect for potassium (K)-doped BaFe{sub 2}As{sub 2}superconducting thin films by analyzing the relation between the longitudinal resistivity (ρ{sub xy}) and the Hall resistivity (ρ{sub xy}). The thin films used in this study were fabricated on Al{sub O3} (000l) substrates by using an ex-situ pulsed laser deposition (PLD) technique under a high-vacuum condition of ∼10{sup -6} Torr. The samples showed the high superconducting transition temperatures (T{sub C}) of ∼40 K. The ρ{sub xx} and ρ{sub xy}the for K-doped BaFeAs{sub 2} thin films were measured by using a physical property measurement system (PPMS) with a temperature sweep (T-sweep) mode at an applied current density of 100 A/cm{sup 2} and at magnetic fields from 0 up to 9 T. We report the T-sweep results of the ρ{sub xx} and the ρ{sub xy} to investigate Hall scaling behavior on the basis of the relation of ρ{sub xy} = A(ρ{sub xy}){sup β}. The ρ{sub xx} values are 3.0 ± 0.2 in the c-axis-oriented K-doped BaFeAs{sub 2} thin films, whereas the thin films with various oriented-directions like a polycrystal showed slightly lower β than that of c-axis-oriented thin films. Interestingly, the β value is decreased with increasing magnetic fields.

  10. Correlation Spectroscopy of Surfaces, Thin Films, and Nanostructures

    CERN Document Server

    Berakdar, Jamal

    2004-01-01

    Here, leading scientists present an overview of the most modern experimental and theoretical methods for studying electronic correlations on surfaces, in thin films and in nanostructures. In particular, they describe in detail coincidence techniques for studying many-particle correlations while. critically examining the informational content of such processes from a theoretical point viewpoint. Furthermore, the book considers the current state of incorporating many-body effects into theoretical approaches. Covered topics:. -Auger-electron photoelectron coincidence experiments and theories. -Co

  11. Knife-edge thin film field emission cathodes

    International Nuclear Information System (INIS)

    Lee, B.; Demroff, H.P.; Drew, M.M.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Smith, D.D.; Trost, H.J.

    1993-01-01

    Cathodes made of thin-film field emission arrays (FEA) have the advantages of high current density, pulsed emission, and low bias voltage operation. The authors have developed a technology to fabricate knife-edge field emission cathodes on (110) silicon wafers. The emitter geometry is optimized for efficient modulation at high frequency. Cathode fabrication progress and preliminary analysis of their applications in RF power sources are presented

  12. Thin-Film Material Science and Processing | Materials Science | NREL

    Science.gov (United States)

    Thin-Film Material Science and Processing Thin-Film Material Science and Processing Photo of a , a prime example of this research is thin-film photovoltaics (PV). Thin films are important because cadmium telluride thin film, showing from top to bottom: glass, transparent conducting oxide (thin layer

  13. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  14. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  15. Thin layers in actinide research

    International Nuclear Information System (INIS)

    Gouder, T.

    1998-01-01

    Surface science research at the ITU is focused on the synthesis and surface spectroscopy studies of thin films of actinides and actinide compounds. The surface spectroscopies used are X-ray and ultra violet photoelectron spectroscopy (XPS and UPS, respectively), and Auger electron spectroscopy (AES). Thin films of actinide elements and compounds are prepared by sputter deposition from elemental targets. Alloy films are deposited from corresponding alloy targets and could be used, in principle, as replicates of these targets. However, there are deviations between alloy film and target composition, which depend on the deposition conditions, such as pressure and target voltage. Mastering of these effects may allow us to study stoichiometric film replicates instead of thick bulk compounds. As an example, we discuss the composition of U-Ni films prepared from a UNi 5 target. (orig.)

  16. Management alternatives of energy wood thinning stands

    International Nuclear Information System (INIS)

    Heikkilae, Jani; Siren, Matti; Aeijaelae, Olli

    2007-01-01

    Energy wood thinning has become a feasible treatment alternative of young stands in Finland. Energy wood thinnings have been carried out mainly in stands where precommercial thinning has been neglected and the harvesting conditions for industrial wood thinning are difficult. Despite of its positive effects on harvesting costs and on renewable energy potential, whole-tree harvesting has been constantly criticized for causing growth loss. In this paper, the profitability of energy wood thinning was studied in 20 Scots pine-dominated stands where energy wood thinning was carried out. The growth of the stands after thinning was predicted with the help of Motti-stand simulator. Entire rotation time of the stands was simulated with different management alternatives. The intensity of first thinning and recovery level of logging residues varied between alternatives. In order to attain acceptable harvesting conditions, industrial wood thinning had to be delayed. The effect of energy wood thinning on subsequent stem wood growth was almost the same as in conventional thinning. Whole-tree harvesting for energy proved to be profitable alternative if the stumpage price is around 3EUR m -3 , the interest rate is 3% or 5% and the removal of pulpwood is less than 20 m 3 ha -1 . If the harvestable pulpwood yield is over 20 m 3 ha -1 , integrated harvesting of industrial and energy wood or delayed industrial wood harvesting becomes more profitable. (author)

  17. PIXE analysis of thin samples

    International Nuclear Information System (INIS)

    Kiss, Ildiko; Koltay, Ede; Szabo, Gyula; Laszlo, S.; Meszaros, A.

    1985-01-01

    Particle-induced X-ray emission (PIXE) multielemental analysis of thin film samples are reported. Calibration methods of K and L X-lines are discussed. Application of PIXE analysis to aerosol monitoring, multielement aerosol analysis is described. Results of PIXE analysis of samples from two locations in Hungary are compared with the results of aerosol samples from Scandinavia and the USA. (D.Gy.)

  18. Gas target with thin wall

    International Nuclear Information System (INIS)

    Korenchenko, A.S.; Korenchenko, S.M.; Kravchuk, N.P.; Filippov, A.I.; Fursov, A.P.

    1992-01-01

    The technology of targets manufacture with thin wall diameter 100 mm and lengthwise 700 mm from composition kevlar + epoxy resin is described. The test's results on pressure and vacuum are reported. The created targets are supposed to be used on the installation ARES for an investigation of muons and pions interactions with light nuclei and rare pions decay 'on flying'. 5 refs.; 2 figs.; 2 tabs

  19. Soliton on thin vortex filament

    International Nuclear Information System (INIS)

    Konno, Kimiaki; Mituhashi, Masahiko; Ichikawa, Y.H.

    1990-12-01

    Showing that one of the equations found by Wadati, Konno and Ichikawa is equivalent to the equation of motion of a thin vortex filament, we investigate solitons on the vortex filament. N vortex soliton solution is given in terms of the inverse scattering method. We examine two soliton collision processes on the filament. Our analysis provides the theoretical foundation of two soliton collision processes observed numerically by Aref and Flinchem. (author)

  20. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron ... alloys of Ni and Fe) take an important place. NiFe alloy with a ... room temperature (∼298 K, without intentional heating) on Si(100) substrates. A base pressure of 1×10−6 mbar was achieved prior to the deposition. Three different ...

  1. The current role of vascular stents.

    Science.gov (United States)

    Busquet, J

    1993-09-01

    The limitations of percutaneous balloon angioplasty have favoured the development and the use of vascular endoprostheses or stents. These thin-walled metal devices maintain after expansion, an optimal and constant diameter for the vascular lumen. Restenosis, dissection, abrupt closure, residual stenosis or re-opened total occlusion represent appropriate indications for stenting. A large experience with non-coronary application of stents is currently available in iliac, femoro-popliteal and renal arteries, aorta, large veins.

  2. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

    2017-08-15

    Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  3. Imposed currents in galvanic cells

    International Nuclear Information System (INIS)

    Biesheuvel, P.M.; Soestbergen, M. van; Bazant, M.Z.

    2009-01-01

    We analyze the steady-state behavior of a general mathematical model for reversible galvanic cells, such as redox flow cells, reversible solid oxide fuel cells, and rechargeable batteries. We consider not only operation in the galvanic discharging mode, spontaneously generating a positive current against an external load, but also operation in two modes which require a net input of electrical energy: (i) the electrolytic charging mode, where a negative current is imposed to generate a voltage exceeding the open-circuit voltage, and (ii) the 'super-galvanic' discharging mode, where a positive current exceeding the short-circuit current is imposed to generate a negative voltage. Analysis of the various (dis-)charging modes of galvanic cells is important to predict the efficiency of electrical to chemical energy conversion and to provide sensitive tests for experimental validation of fuel cell models. In the model, we consider effects of diffuse charge on electrochemical charge-transfer rates by combining a generalized Frumkin-Butler-Volmer equation for reaction kinetics across the compact Stern layer with the full Poisson-Nernst-Planck transport theory, without assuming local electroneutrality. Since this approach is rare in the literature, we provide a brief historical review. To illustrate the general theory, we present results for a monovalent binary electrolyte, consisting of cations, which react at the electrodes, and non-reactive anions, which are either fixed in space (as in a solid electrolyte) or are mobile (as in a liquid electrolyte). The full model is solved numerically and compared to analytical results in the limit of thin diffuse layers, relative to the membrane thickness. The spatial profiles of the ion concentrations and electrostatic potential reveal a complex dependence on the kinetic parameters and the imposed current, in which the diffuse charge at each electrode and the total membrane charge can have either sign, contrary perhaps to intuition

  4. Thin Watts-Strogatz networks.

    Science.gov (United States)

    de Moura, Alessandro P S

    2006-01-01

    A modified version of the Watts-Strogatz (WS) network model is proposed, in which the number of shortcuts scales with the network size N as Nalpha, with alpha infinity, whereas in the original WS model, this ratio is constant. We call such networks "thin Watts-Strogatz networks." We show that even though the fraction of shortcuts becomes vanishingly small for large networks, they still cause a kind of small-world effect, in the sense that the length L of the network increases sublinearly with the size. We develop a mean-field theory for these networks, which predicts that the length scales as N1-alpha ln N for large N. We also study how a search using only local information works in thin WS networks. We find that the search performance is enhanced compared to the regular network, and we predict that the search time tau scales as N1-alpha/2. These theoretical results are tested using numerical simulations. We comment on the possible relevance of thin WS networks for the design of high-performance low-cost communication networks.

  5. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

    Science.gov (United States)

    Zhu, Guisheng; Zhi, Li; Yang, Huijuan; Xu, Huarui; Yu, Aibing

    2012-09-01

    In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

  6. Structural characterization of the nickel thin film deposited by glad technique

    Directory of Open Access Journals (Sweden)

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  7. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  8. Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

    International Nuclear Information System (INIS)

    Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

    2015-01-01

    Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

  9. Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

    Directory of Open Access Journals (Sweden)

    Olga Korostynska

    2002-08-01

    Full Text Available Thin films of Tellurium dioxide (TeO2 were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

  10. Magnetic hysteresis measurements of thin films under isotropic stress.

    Science.gov (United States)

    Holland, Patrick; Dubey, Archana; Geerts, Wilhelmus

    2000-10-01

    Nowadays, ferromagnetic thin films are widely applied in devices for information technology (credit cards, video recorder tapes, floppies, hard disks) and sensors (air bags, anti-breaking systems, navigation systems). Thus, with the increase in the use of magnetic media continued investigation of magnetic properties of materials is necessary to help in determining the useful properties of materials for new or improved applications. We are currently interested in studying the effect of applied external stress on Kerr hysteresis curves of thin magnetic films. The Ni and NiFe films were grown using DC magnetron sputtering with Ar as the sputter gas (pAr=4 mTorr; Tsub=55-190 C). Seed and cap layers of Ti were used on all films for adhesion and oxidation protection, respectively. A brass membrane pressure cell was designed to apply in-plane isotropic stress to thin films. In this pressure cell, gas pressure is used to deform a flexible substrate onto which a thin magnetic film has been sputtered. The curvature of the samples could be controlled by changing the gas pressure to the cell. Magneto-Optical in-plane hysteresis curves at different values of strain were measured. The results obtained show that the stress sensitivity is dependent on the film thickness. For the 500nm NiFe films, the coercivity strongly decreased as a function of the applied stress.

  11. Study of neural cells on organic semiconductor ultra thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bystrenova, Eva; Tonazzini, Ilaria; Stoliar, Pablo; Greco, Pierpaolo; Lazar, Adina; Dutta, Soumya; Dionigi, Chiara; Cacace, Marcello; Biscarini, Fabio [ISMN-CNR, Bologna (Italy); Jelitai, Marta; Madarasz, Emilia [IEM- HAS, Budapest (Hungary); Huth, Martin; Nickel, Bert [LMU, Munich (Germany); Martini, Claudia [Dept. PNPB, Univ. of Pisa (Italy)

    2008-07-01

    Many technological advances are currently being developed for nano-fabrication, offering the ability to create and control patterns of soft materials. We report the deposition of cells on organic semiconductor ultra-thin films. This is a first step towards the development of active bio/non bio systems for electrical transduction. Thin films of pentacene, whose thickness was systematically varied, were grown by high vacuum sublimation. We report adhesion, growth, and differentiation of human astroglial cells and mouse neural stem cells on an organic semiconductor. Viability of astroglial cells in time was measured as a function of the roughness and the characteristic morphology of ultra thin organic film, as well as the features of the patterned molecules. Optical fluorescence microscope coupled to atomic force microscope was used to monitor the presence, density and shape of deposited cells. Neural stem cells remain viable, differentiate by retinoic acid and form dense neuronal networks. We have shown the possibility to integrate living neural cells on organic semiconductor thin films.

  12. Quantitative evaluation about property of thin-film formation

    Energy Technology Data Exchange (ETDEWEB)

    Chen Huawei [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo (Japan) and School of Mechanical Engineering, Tianjin University (China)]. E-mail: chen_hua_wei@yahoo.com; Hagiwara, Ichiro [Department of Mechanical Sciences and Engineering, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo (Japan); Huang Tian [Department of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); School of Mechanical Engineering, Tianjin University (China); Zhang Dawei [School of Mechanical Engineering, Tianjin University (China)

    2006-03-15

    Chemical vapor deposition (CVD) is gradually emphasized as one promising method for nanomaterial formation. Such growth mechanism has been mainly investigated on basis of experiment. Due to large cost of the equipment of experiment and low level of current measurement, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin film. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000, 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Within one velocity range, not only the speed of epitaxial growth and adhesion between thin film and substrate were enhanced, but also the degree of epitaxy increased and the shape of thin film became more flat with velocity increasing. Moreover, the epitaxial growth became well as the temperature of substrate was raised within a certain range, and the degree of epitaxy of small cluster was larger than larger cluster. The results indicated that the property of thin film could be controlled if the effect of situations of process was made clear.

  13. Quantitative evaluation about property of thin-film formation

    International Nuclear Information System (INIS)

    Chen Huawei; Hagiwara, Ichiro; Huang Tian; Zhang Dawei

    2006-01-01

    Chemical vapor deposition (CVD) is gradually emphasized as one promising method for nanomaterial formation. Such growth mechanism has been mainly investigated on basis of experiment. Due to large cost of the equipment of experiment and low level of current measurement, the comprehension about authentic effect of formation condition on properties of nanomaterial is limited in qualitative manner. Three quantitative items: flatness of primary deposition, adhesion between cluster and substrate, and degree of epitaxial growth were proposed to evaluate the property of thin film. In this simulation, three different cluster sizes of 203, 653, 1563 atoms with different velocities (0, 10, 100, 1000, 3000 m/s) were deposited on a Cu(0 0 1) substrate whose temperatures were set between 300 and 1000 K. Within one velocity range, not only the speed of epitaxial growth and adhesion between thin film and substrate were enhanced, but also the degree of epitaxy increased and the shape of thin film became more flat with velocity increasing. Moreover, the epitaxial growth became well as the temperature of substrate was raised within a certain range, and the degree of epitaxy of small cluster was larger than larger cluster. The results indicated that the property of thin film could be controlled if the effect of situations of process was made clear

  14. First-principles-based study of transport properties of Fe thin films on Cu surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Kishi, Tomoya [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Kasai, Hideaki [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Nakanishi, Hiroshi [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Dino, Wilson Agerico [Department of Applied Physics, Osaka University, Suita, Osaka 565-0871 (Japan); Komori, Fumio [Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8587 (Japan)

    2004-12-08

    We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties.

  15. First-principles-based study of transport properties of Fe thin films on Cu surfaces

    International Nuclear Information System (INIS)

    Kishi, Tomoya; Kasai, Hideaki; Nakanishi, Hiroshi; Dino, Wilson Agerico; Komori, Fumio

    2004-01-01

    We investigate the transport properties of Fe thin films on Cu(111) based on first principles calculation. We calculate the electron current through these Fe thin films, which can be observed by using a double-tipped scanning tunnelling microscope. We find that the conductance is majority spin polarized. On the basis of the band structures for this system, we discuss the origin of these interesting transport properties

  16. High performance direct methanol fuel cell with thin electrolyte membrane

    Science.gov (United States)

    Wan, Nianfang

    2017-06-01

    A high performance direct methanol fuel cell is achieved with thin electrolyte membrane. 320 mW cm-2 of peak power density and over 260 mW cm-2 at 0.4 V are obtained when working at 90 °C with normal pressure air supply. It is revealed that the increased anode half-cell performance with temperature contributes primarily to the enhanced performance at elevated temperature. From the comparison of iR-compensated cathode potential of methanol/air with that of H2/air fuel cell, the impact of methanol crossover on cathode performance decreases with current density and becomes negligible at high current density. Current density is found to influence fuel efficiency and methanol crossover significantly from the measurement of fuel efficiency at different current density. At high current density, high fuel efficiency can be achieved even at high temperature, indicating decreased methanol crossover.

  17. Dielectric loss of strontium titanate thin films

    Science.gov (United States)

    Dalberth, Mark Joseph

    1999-12-01

    Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

  18. Pinning enhancement in MgB2 superconducting thin films by ...

    Indian Academy of Sciences (India)

    The magnetic field dependence of the critical current density Jc was calculated from the M–H loops and magnetic field dependence of ... MgB2 thin film; Fe2O3 nanoparticles; critical current density; r-plane Al2O3 substrate. 1. Introduction. The discovery of ... It was thought that from these cal- culations, one can choose an ...

  19. Thinning increases climatic resilience of red pine

    Science.gov (United States)

    Magruder, Matthew; Chhin, Sophan; Palik, Brian; Bradford, John B.

    2013-01-01

    Forest management techniques such as intermediate stand-tending practices (e.g., thinning) can promote climatic resiliency in forest stands by moderating tree competition. Residual trees gain increased access to environmental resources (i.e., soil moisture, light), which in turn has the potential to buffer trees from stressful climatic conditions. The influences of climate (temperature and precipitation) and forest management (thinning method and intensity) on the productivity of red pine (Pinus resinosa Ait.) in Michigan were examined to assess whether repeated thinning treatments were able to increase climatic resiliency (i.e., maintaining productivity and reduced sensitivity to climatic stress). The cumulative productivity of each thinning treatment was determined, and it was found that thinning from below to a residual basal area of 14 m2·ha−1 produced the largest average tree size but also the second lowest overall biomass per acre. On the other hand, the uncut control and the thinning from above to a residual basal area of 28 m2·ha−1 produced the smallest average tree size but also the greatest overall biomass per acre. Dendrochronological methods were used to quantify sensitivity of annual radial growth to monthly and seasonal climatic factors for each thinning treatment type. Climatic sensitivity was influenced by thinning method (i.e., thinning from below decreased sensitivity to climatic stress more than thinning from above) and by thinning intensity (i.e., more intense thinning led to a lower climatic sensitivity). Overall, thinning from below to a residual basal area of 21 m2·ha−1 represented a potentially beneficial compromise to maximize tree size, biomass per acre, and reduced sensitivity to climatic stress, and, thus, the highest level of climatic resilience.

  20. Fabrication and electrical characterization of ultra-thin substrate IGBT

    OpenAIRE

    Guhathakurta, Jajnabalkya

    2013-01-01

    Current topics such as electro-mobility and renewable energy demand the development of power devices with high voltage and current ratings along with minimum switching losses. Amongst the power devices in today’s market, IGBTs have gained a lot of significance in this field over its competitors like Power MOSFETS and Thyristors. Today’s industry has recently taken a huge step in this direction to implement the use of thin-wafer technology for fabrication of IGBTs to reduce the on-resistance. ...

  1. Current limitation in low pressure mercury arcs

    International Nuclear Information System (INIS)

    Torven, S.; Babic, M.

    1976-06-01

    When the electric current in a low pressure arc with a long positive column is increased sufficiently, an electrostatic instability develops in the plasma which leads to formation of thin space charge layers across the column. The instability is investigated in a mercury plasma column kept axially homogeneous by a special technique. Values of some plasma parameters are measured at the instability threshold. It is found that the plasma is in a weakly ionized state in contrast to predictions by widely accepted current limitation theories. It is concluded that new types of theories are required to explain the observations. (Auth.)

  2. Alternating current loss reduction for rectangular busbars by covering their edges with low permeable magnetic caps

    Energy Technology Data Exchange (ETDEWEB)

    Sasada, Ichiro, E-mail: sasada@ence.kyushu-u.ac.jp [Applied Science for Electronics and Materials, Kyushu University, Kasuga (Japan)

    2014-05-07

    A method to reduce ac conductive losses in a thin rectangular busbar made of copper is presented. The method is based on a technique, which makes the distribution of the ac current in the cross section of a busbar flatter. Edges of a thin busbar are covered with low permeability magnetic thin layers as caps. The magnetic cap makes the impedance experienced by the current flowing near the edge comparatively larger so that currents cannot get crowded near the edges of a busbar. This method is numerically verified.

  3. Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

    Science.gov (United States)

    Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

    We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

  4. Female pattern alopecia: current perspectives

    Directory of Open Access Journals (Sweden)

    Levy LL

    2013-08-01

    Full Text Available Lauren L Levy, Jason J Emer Department of Dermatology, Mount Sinai School of Medicine, New York, NY, USA Abstract: Hair loss is a commonly encountered problem in clinical practice, with men presenting with a distinctive pattern involving hairline recession and vertex balding (Norwood-Hamilton classification and women exhibiting diffuse hair thinning over the crown (increased part width and sparing of the frontal hairline (Ludwig classification. Female pattern hair loss has a strikingly overwhelming psychological effect; thus, successful treatments are necessary. Difficulty lies in successful treatment interventions, as only two medications – minoxidil and finasteride – are approved for the treatment of androgenetic alopecia, and these medications offer mediocre results, lack of a permanent cure, and potential complications. Hair transplantation is the only current successful permanent option, and it requires surgical procedures. Several other medical options, such as antiandrogens (eg, spironolactone, oral contraceptives, cyproterone, flutamide, dutasteride, prostaglandin analogs (eg, bimatoprost, latanoprost, and ketoconazole are reported to be beneficial. Laser and light therapies have also become popular despite the lack of a profound benefit. Management of expectations is crucial, and the aim of therapy, given the current therapeutic options, is to slow or stop disease progression with contentment despite patient expectations of permanent hair regrowth. This article reviews current perspectives on therapeutic options for female pattern hair loss. Keywords: androgenetic alopecia, female pattern hair loss, minoxidil, finasteride, antiandrogens, spironolactone

  5. Female pattern alopecia: current perspectives

    Science.gov (United States)

    Levy, Lauren L; Emer, Jason J

    2013-01-01

    Hair loss is a commonly encountered problem in clinical practice, with men presenting with a distinctive pattern involving hairline recession and vertex balding (Norwood-Hamilton classification) and women exhibiting diffuse hair thinning over the crown (increased part width) and sparing of the frontal hairline (Ludwig classification). Female pattern hair loss has a strikingly overwhelming psychological effect; thus, successful treatments are necessary. Difficulty lies in successful treatment interventions, as only two medications – minoxidil and finasteride – are approved for the treatment of androgenetic alopecia, and these medications offer mediocre results, lack of a permanent cure, and potential complications. Hair transplantation is the only current successful permanent option, and it requires surgical procedures. Several other medical options, such as antiandrogens (eg, spironolactone, oral contraceptives, cyproterone, flutamide, dutasteride), prostaglandin analogs (eg, bimatoprost, latanoprost), and ketoconazole are reported to be beneficial. Laser and light therapies have also become popular despite the lack of a profound benefit. Management of expectations is crucial, and the aim of therapy, given the current therapeutic options, is to slow or stop disease progression with contentment despite patient expectations of permanent hair regrowth. This article reviews current perspectives on therapeutic options for female pattern hair loss. PMID:24039457

  6. Minerals deposited as thin films

    International Nuclear Information System (INIS)

    Vazquez, Cristina; Leyt, D.V. de; Custo, Graciela

    1987-01-01

    Free matrix effects are due to thin film deposits. Thus, it was decided to investigate this technique as a possibility to use pure oxide of the desired element, extrapolating its concentration from analytical curves made with avoiding, at the same time, mathematical corrections. The proposed method was employed to determine iron and titanium concentrations in geological samples. The range studied was 0.1-5%m/m for titanium and 5-20%m/m for iron. For both elements the reproducibility was about 7% and differences between this method and other chemical determinations were 15% for titanium and 7% for iron. (Author) [es

  7. Advanced Thin Ionization Calorimeter (ATIC)

    Science.gov (United States)

    Wefel, John P.

    1998-01-01

    This is the final report for NASA grant NAGW-4577, "Advanced Thin Ionization Calorimeter (ATIC)". This grant covered a joint project between LSU and the University of Maryland for a Concept Study of a new type of fully active calorimeter to be used to measure the energy spectra of very high energy cosmic rays, particularly Hydrogen and Helium, to beyond 1014 eV. This very high energy region has been studied with emulsion chamber techniques, but never investigated with electronic calorimeters. Technology had advanced to the point that a fully active calorimeter based upon Bismuth Germanate (BGO) scintillating crystals appeared feasible for balloon flight (and eventually space) experiments.

  8. Preparation of thin vyns films

    International Nuclear Information System (INIS)

    Blanc, R.; Chedin, P.; Gizon, A.

    1965-01-01

    The fabrication of thin films of VYNS resin (copolymer of chloride and vinyl acetate) of superficial density from 3 to 50 μg/cm 2 with solutions in cyclohexanone is presented. Study and discussion of some properties compared with formvar film (polyvinyl formals). It appears that both can be used as source supports but formvar films are prepared more easily and more quickly, in addition they withstand higher temperatures. The main quality of VYNS is that they can be easily separated even several days after their preparation [fr

  9. Cortical thinning and clinical heterogeneity in amyotrophic lateral sclerosis.

    Science.gov (United States)

    Mezzapesa, Domenico Maria; D'Errico, Eustachio; Tortelli, Rosanna; Distaso, Eugenio; Cortese, Rosa; Tursi, Marianna; Federico, Francesco; Zoccolella, Stefano; Logroscino, Giancarlo; Dicuonzo, Franca; Simone, Isabella Laura

    2013-01-01

    Amyotrophic lateral sclerosis (ALS) has heterogeneous clinical features that could be translated into specific patterns of brain atrophy. In the current study we have evaluated the relationship between different clinical expressions of classical ALS and measurements of brain cortical thickness. Cortical thickness analysis was conducted from 3D-MRI using FreeSurfer software in 29 ALS patients and 20 healthy controls. We explored three clinical traits of the disease, subdividing the patients into two groups for each of them: the bulbar or spinal onset, the higher or lower upper motor neuron burden, the faster or slower disease progression. We used both a whole brain vertex-wise analysis and a ROI analysis on primary motor areas. ALS patients showed cortical thinning in bilateral precentral gyrus, bilateral middle frontal gyrus, right superior temporal gyrus and right occipital cortex. ALS patients with higher upper motor neuron burden showed a significant cortical thinning in the right precentral gyrus and in other frontal extra-motor areas, compared to healthy controls. ALS patients with spinal onset showed a significant cortical thinning in the right precentral gyrus and paracentral lobule, compared to healthy controls. ALS patients with faster progressive disease showed a significant cortical thinning in widespread bilateral frontal and temporal areas, including the bilateral precentral gyrus, compared to healthy controls. Focusing on the primary motor areas, the ROI analysis revealed that the mean cortical thickness values were significantly reduced in ALS patients with higher upper motor neuron burden, spinal onset and faster disease progression related to healthy controls. In conclusion, the thickness of primary motor cortex could be a useful surrogate marker of upper motor neuron involvement in ALS; also our results suggest that cortical thinning in motor and non motor areas seem to reflect the clinical heterogeneity of the disease.

  10. Cortical thinning and clinical heterogeneity in amyotrophic lateral sclerosis.

    Directory of Open Access Journals (Sweden)

    Domenico Maria Mezzapesa

    Full Text Available Amyotrophic lateral sclerosis (ALS has heterogeneous clinical features that could be translated into specific patterns of brain atrophy. In the current study we have evaluated the relationship between different clinical expressions of classical ALS and measurements of brain cortical thickness. Cortical thickness analysis was conducted from 3D-MRI using FreeSurfer software in 29 ALS patients and 20 healthy controls. We explored three clinical traits of the disease, subdividing the patients into two groups for each of them: the bulbar or spinal onset, the higher or lower upper motor neuron burden, the faster or slower disease progression. We used both a whole brain vertex-wise analysis and a ROI analysis on primary motor areas. ALS patients showed cortical thinning in bilateral precentral gyrus, bilateral middle frontal gyrus, right superior temporal gyrus and right occipital cortex. ALS patients with higher upper motor neuron burden showed a significant cortical thinning in the right precentral gyrus and in other frontal extra-motor areas, compared to healthy controls. ALS patients with spinal onset showed a significant cortical thinning in the right precentral gyrus and paracentral lobule, compared to healthy controls. ALS patients with faster progressive disease showed a significant cortical thinning in widespread bilateral frontal and temporal areas, including the bilateral precentral gyrus, compared to healthy controls. Focusing on the primary motor areas, the ROI analysis revealed that the mean cortical thickness values were significantly reduced in ALS patients with higher upper motor neuron burden, spinal onset and faster disease progression related to healthy controls. In conclusion, the thickness of primary motor cortex could be a useful surrogate marker of upper motor neuron involvement in ALS; also our results suggest that cortical thinning in motor and non motor areas seem to reflect the clinical heterogeneity of the disease.

  11. Capillary Thinning of Particle-laden Drops

    Science.gov (United States)

    Wagoner, Brayden; Thete, Sumeet; Jahns, Matt; Doshi, Pankaj; Basaran, Osman

    2015-11-01

    Drop formation is central in many applications such as ink-jet printing, microfluidic devices, and atomization. During drop formation, a thinning filament is created between the about-to-form drop and the fluid hanging from the nozzle. Therefore, the physics of capillary thinning of filaments is key to understanding drop formation and has been thoroughly studied for pure Newtonian fluids. The thinning dynamics is, however, altered completely when the fluid contains particles, the physics of which is not well understood. In this work, we explore the impact of solid particles on filament thinning and drop formation by using a combination of experiments and numerical simulations.

  12. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  13. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  14. Analysis of Hard Thin Film Coating

    Science.gov (United States)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  15. Effects of electron pressure anisotropy on current sheet configuration

    Energy Technology Data Exchange (ETDEWEB)

    Artemyev, A. V., E-mail: aartemyev@igpp.ucla.edu; Angelopoulos, V.; Runov, A. [Institute of Geophysics and Planetary Physics, University of California, Los Angeles, California 90095 (United States); Vasko, I. Y. [Space Research Institute, RAS, Moscow (Russian Federation)

    2016-09-15

    Recent spacecraft observations in the Earth's magnetosphere have demonstrated that the magnetotail current sheet can be supported by currents of anisotropic electron population. Strong electron currents are responsible for the formation of very thin (intense) current sheets playing the crucial role in stability of the Earth's magnetotail. We explore the properties of such thin current sheets with hot isotropic ions and cold anisotropic electrons. Decoupling of the motions of ions and electrons results in the generation of a polarization electric field. The distribution of the corresponding scalar potential is derived from the electron pressure balance and the quasi-neutrality condition. We find that electron pressure anisotropy is partially balanced by a field-aligned component of this polarization electric field. We propose a 2D model that describes a thin current sheet supported by currents of anisotropic electrons embedded in an ion-dominated current sheet. Current density profiles in our model agree well with THEMIS observations in the Earth's magnetotail.

  16. Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2012-01-01

    Full Text Available We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide (α-HfIZO thin film transistors (TFTs. Co-sputtering-processed α-HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α-HfIZO had a significant effect on reliability, hysteresis, field-effect mobility (μFE, carrier concentration, and subthreshold swing (S of the device. Our results indicated that we could successfully and easily fabricate α-HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α-HfIZO TFTs were fabricated with an on/off current ratio of ~106, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.

  17. Magnetic Property in Large Array Niobium Antidot Thin Films

    Science.gov (United States)

    Tinghui, Chen; Hsiang-Hsi, Kung; Wei-Li, Lee; Institute of Physics, Academia Sinica, Taipei, Taiwan Team

    2014-03-01

    In a superconducting ring, the total flux inside the ring is required to be an integer number of the flux quanta. Therefore, a supercurrent current can appear within the ring in order to satisfy this quantization rule, which gives rise to certain magnetic response. By using a special monolayer polymer/nanosphere hybrid we developed previously, we fabricated a series of superconducting niobium antidot thin films with different antidot diameters. The antidots form well-ordered triangular lattice with a lattice spacing about 200 nm and extend over an area larger than 1 cm2, which enables magnetic detections simply by a SQUID magnetometer. We observed magnetization oscillation with external magnetic field due to the supercurrent screening effect, where different features for large and small antidot thin films were found. Detailed size and temperature dependencies of the magnetization in niobium antidot nanostructures will be presented.

  18. Plasmonic versus dielectric enhancement in thin-film solar cells

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Mortensen, N. Asger; Sigmund, Ole

    2012-01-01

    to its metallic counterpart. We show that the enhanced normalized short-circuit current for a cell with silicon strips can be increased 4 times compared to the best performance for strips of silver, gold, or aluminium. For this particular case, the simple dielectric grating may outperform its plasmonic......Several studies have indicated that broadband absorption of thin-film solar cells can be enhanced by use of surface-plasmon induced resonances of metallic parts like strips or particles. The metallic parts may create localized modes or scatter incoming light to increase absorption in thin......-film semiconducting material. For a particular case, we show that coupling to the same type of localized slab-waveguide modes can be obtained by a surface modulation consisting of purely dielectric strips. The purely dielectric device turns out to have a significantly higher broadband enhancement factor compared...

  19. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application.

    Science.gov (United States)

    Liang, Xuelei; Xia, Jiye; Dong, Guodong; Tian, Boyuan; Peng, Lianmao

    2016-12-01

    Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.

  20. Preparation of thin nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1979-03-01

    Thin film backings, sources and targets are needed for many applications in low energy nuclear physics and nuclear chemistry experiments. A survey of techniques used in the preparation of nuclear targets is first briefly discussed. These are classified as chemical, mechanical and physical preparations. Vacuum evaporation, being the most generally used technique, is discussed in detail. It is highly desirable to monitor the film thickness and control the deposition rate during evaporation and to measure the final target thickness after deposition has concluded. The relative merits of various thickness measuring techniques are described. Stages in the fabrication and mounting of self-supporting foils are described in detail, with emphasis given to the preparation of thin self-supporting carbon foils used as target backings and stripper foils. Various target backings, and the merits of the more generally used release agents are described in detail. The preparations of more difficult elemental targets are discussed, and a comprehensive list of the common targets is presented

  1. Flexible thin film magnetoimpedance sensors

    International Nuclear Information System (INIS)

    Kurlyandskaya, G.V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-01-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti] 3 /Cu/[FeNi/Ti] 3 films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  2. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  3. Evaluation of wall thinning of piping with reinforcing plates using ECT with controlled exciting field

    International Nuclear Information System (INIS)

    Ichihara, Toshiaki; Xie, Shejuan; Uchimoto, Tetsuya; Takagi, Toshiyuki

    2011-01-01

    No effective inspection method exists at present for detection and evaluation of wall thinning under the reinforcing plates to T-tubes in nuclear power plants, and the establishment of the inspection method is highly required. In this study, eddy current testing (ECT) with controlled exciting field is applied to evaluation of wall thinning under the reinforcing plates of T-tubes, and their feasibility is discussed. In order to induce eddy current field in deep region of doubled plates, pulse excitation and probe structures are investigated. Through experiments using specimens simulating tubes with reinforcing plates, it is shown that pulsed ECT and conventional TR type eddy current probe with optimized configuration have a capability of detecting and sizing the wall thinning under reinforcing plates. (author)

  4. Voltage transients in thin-film InSb Hall sensor

    Science.gov (United States)

    Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

    The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

  5. CuPc/C60 heterojunction thin film optoelectronic devices

    International Nuclear Information System (INIS)

    Murtaza, Imran; Karimov, Khasan S.; Qazi, Ibrahim

    2010-01-01

    The optoelectronic properties of heterojunction thin film devices with ITO/CuPc/C 60 /Al structure have been investigated by analyzing their current-voltage characteristics, optical absorption and photocurrent. In this organic photovoltaic device, CuPc acts as an optically active layer, C 60 as an electron-transporting layer and ITO and Al as electrodes. It is observed that, under illumination, excitons are formed, which subsequently drift towards the interface with C 60 , where an internal electric field is present. The excitons that reach the interface are subsequently dissociated into free charge carriers due to the electric field present at the interface. The experimental results show that in this device the total current density is a function of injected carriers at the electrode-organic semiconductor surface, the leakage current through the organic layer and collected photogenerated current that results from the effective dissociation of excitons. (semiconductor devices)

  6. A high power ZnO thin film piezoelectric generator

    Science.gov (United States)

    Qin, Weiwei; Li, Tao; Li, Yutong; Qiu, Junwen; Ma, Xianjun; Chen, Xiaoqiang; Hu, Xuefeng; Zhang, Wei

    2016-02-01

    A highly efficient and large area piezoelectric ZnO thin film nanogenerator (NG) was fabricated. The ZnO thin film was deposited onto a Si substrate by pulsed laser ablation at a substrate temperature of 500 °C. The deposited ZnO film exhibited a preferred c-axis orientation and a high piezoelectric value of 49.7 pm/V characterized using Piezoelectric Force Microscopy (PFM). Thin films of ZnO were patterned into rectangular power sources with dimensions of 0.5 × 0.5 cm2 with metallic top and bottom electrodes constructed via conventional semiconductor lithographic patterning processes. The NG units were subjected to periodic bending/unbending motions produced by mechanical impingement at a fixed frequency of 100 Hz at a pressure of 0.4 kg/cm2. The output electrical voltage, current density, and power density generated by one ZnO NG were recorded. Values of ∼95 mV, 35 μA cm-2 and 5.1 mW cm-2 were recorded. The level of power density is typical to that produced by a PZT NG on a flexible substrate. Higher energy NG sources can be easily created by adding more power units either in parallel or in series. The thin film ZnO NG technique is highly adaptable with current semiconductor processes, and as such, is easily integrated with signal collecting circuits that are compatible with mass production. A typical application would be using the power harvested from irregular human foot motions to either to operate blue LEDs directly or to drive a sensor network node in mille-power level without any external electric source and circuits.

  7. Biocompatibility and Surface Properties of TiO2 Thin Films Deposited by DC Magnetron Sputtering

    Science.gov (United States)

    López-Huerta, Francisco; Cervantes, Blanca; González, Octavio; Hernández-Torres, Julián; García-González, Leandro; Vega, Rosario; Herrera-May, Agustín L.; Soto, Enrique

    2014-01-01

    We present the study of the biocompatibility and surface properties of titanium dioxide (TiO2) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO2 thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO2 thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO2 thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO2 thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO2 thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior. PMID:28788667

  8. Thin Film Photovoltaic Partnership Project | Photovoltaic Research | NREL

    Science.gov (United States)

    Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed

  9. New Methods for Thin Film Deposition and First Investigations of the use of High Temperature Superconductors for Thin Film Cavities

    CERN Document Server

    Gustafsson, Anna; Vollenberg, Wilhelmus; Seviour, Rebecca

    2010-01-01

    Niobium thin film cavities have shown good and reliable performance for LEP and LHC, although there are limitations to overcome if this technique should be used for new accelerators such as the ILC. New coating techniques like High Power Impulse Magnetron Sputtering (HiPIMS) has shown very promising results and we will report on its possible improvements for Nb thin film cavity performance. Current materials used in accelerator Superconducting Radio Frequency (SRF) technologies operate at temperatures below 4 K, which require complex cryogenic systems. Researchers have investigated the use of High Temperature Superconductors (HTS) to form RF cavities, with limited success. We propose a new approach to achieve a high-temperature SRF cavity based on the superconducting ’proximity effect’. The superconducting proximity effect is the effect through which a superconducting material in close proximity to a non-superconducting material induces a superconducting condensate in the latter. Using this effect we hope...

  10. Nanostructured tungsten trioxide thin films synthesized for photoelectrocatalytic water oxidation: a review.

    Science.gov (United States)

    Zhu, Tao; Chong, Meng Nan; Chan, Eng Seng

    2014-11-01

    The recent developments of nanostructured WO3 thin films synthesized through the electrochemical route of electrochemical anodization and cathodic electrodeposition for the application in photoelectrochemical (PEC) water splitting are reviewed. The key fundamental reaction mechanisms of electrochemical anodization and cathodic electrodeposition methods for synthesizing nanostructured WO3 thin films are explained. In addition, the effects of metal oxide precursors, electrode substrates, applied potentials and current densities, and annealing temperatures on size, composition, and thickness of the electrochemically synthesized nanostructured WO3 thin films are elucidated in detail. Finally, a summary is given for the general evaluation practices used to calculate the energy conversion efficiency of nanostructured WO3 thin films and a recommendation is provided to standardize the presentation of research results in the field to allow for easy comparison of reported PEC efficiencies in the near future. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

    Science.gov (United States)

    Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

    2017-10-01

    Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

  12. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

    Directory of Open Access Journals (Sweden)

    Nen-Wen Pu

    2015-09-01

    Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  13. Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

    Science.gov (United States)

    Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang

    2015-09-21

    : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

  14. Thinning of young Douglas-fir forests decreases density of northern flying squirrels in the Oregon Cascades

    Science.gov (United States)

    Manning, Tom; Hagar, Joan C.; McComb, Brenda C.

    2012-01-01

    Large-scale commercial thinning of young forests in the Pacific Northwest is currently promoted on public lands to accelerate the development of late-seral forest structure for the benefit of wildlife species such as northern spotted owls (Strix occidentalis caurina) and their prey, including the northern flying squirrel (Glaucomys sabrinus). Attempts to measure the impact of commercial thinning on northern flying squirrels have mostly addressed short-term effects (2–5 years post-thinning) and the few published studies of longer-term results have been contradictory. We measured densities of northern flying squirrels 11–13 years after thinning of young (55–65 years) Douglas-fir forest stands in the Cascade Range of Oregon, as part of the Young Stand Thinning & Diversity Study. The study includes four replicate blocks, each consisting of an unthinned control stand and one stand each of the following thinning treatments: Heavy Thin; Light Thin; and Light Thin with Gaps. Thinning decreased density of northern flying squirrels, and squirrel densities were significantly lower in heavily thinned stands than in more lightly thinned stands. Regression analysis revealed a strong positive relationship of flying squirrel density with density of large (>30 cm diameter) standing dead trees and a negative relationship with percent cover of low understory shrubs. Maintaining sufficient area and connectivity of dense, closed canopy forest is recommended as a strategy to assure that long-term goals of promoting late-seral structure do not conflict with short-term habitat requirements of this important species.

  15. Dielectric aluminium phosphate thin films. Couches minces dielectriques de phosphate d'aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Daviero, S. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Avinens, C. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Ibanez, A. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France)); Giuntini, J.C. (Lab. Physicochimie des Materiaux Solides, 34 -Montpellier (France)); Philippot, E. (Lab. Physicochimie des Materiaux Solides, 34 - Montpellier (France))

    1993-04-01

    Aluminium phosphate thin films on silicium substrate have been carried out from tributylphosphate and aluminium acetylacetonate precursors in solution through the ''pyrosol'' process. It can be observed a large range of chemical analysis in terms of experimental conditions. These thin films have been characterized by X-ray diffraction and infrared spectrometry. Their electrical characteristics, defined from direct current and alternative current measurements, are quite different to those of the crystallized phosphate and can be explained by P-O and Al-O ''dangling bond'' existence. (orig.).

  16. Neuromorphic transistor achieved by redox reaction of WO3 thin film

    Science.gov (United States)

    Tsuchiya, Takashi; Jayabalan, Manikandan; Kawamura, Kinya; Takayanagi, Makoto; Higuchi, Tohru; Jayavel, Ramasamy; Terabe, Kazuya

    2018-04-01

    An all-solid-state neuromorphic transistor composed of a WO3 thin film and a proton-conducting electrolyte was fabricated for application to next-generation information and communication technology including artificial neural networks. The drain current exhibited a 4-order-of-magnitude increment by redox reaction of the WO3 thin film owing to proton migration. Learning and forgetting characteristics were well tuned by the gate control of WO3 redox reactions owing to the separation of the current reading path and pulse application path in the transistor structure. This technique should lead to the development of versatile and low-power-consumption neuromorphic devices.

  17. Holographic heat current as Noether current

    Science.gov (United States)

    Liu, Hai-Shan; Lü, H.; Pope, C. N.

    2017-09-01

    We employ the Noether procedure to derive a general formula for the radially conserved heat current in AdS planar black holes with certain transverse and traceless perturbations, for a general class of gravity theories. For Einstein gravity, the general higher-order Lovelock gravities and also a class of Horndeski gravities, we derive the boundary stress tensor and show that the resulting boundary heat current matches precisely the bulk Noether current.

  18. High Critical Current Coated Conductors

    Energy Technology Data Exchange (ETDEWEB)

    Paranthaman, M. P.; Selvamanickam, V. (SuperPower, Inc.)

    2011-12-27

    One of the important critical needs that came out of the DOE’s coated conductor workshop was to develop a high throughput and economic deposition process for YBCO. Metal-organic chemical vapor deposition (MOCVD) technique, the most critical steps in high technical micro fabrications, has been widely employed in semiconductor industry for various thin film growth. SuperPower has demonstrated that (Y,Gd)BCO films can be deposited rapid with world record performance. In addition to high critical current density with increased film thickness, flux pinning properties of REBCO films needs to be improved to meet the DOE requirements for various electric-power equipments. We have shown that doping with Zr can result in BZO nanocolumns, but at substantially reduced deposition rate. The primary purpose of this subtask is to develop high current density MOCVD-REBCO coated conductors based on the ion-beam assisted (IBAD)-MgO deposition process. Another purpose of this subtask is to investigate HTS conductor design optimization (maximize Je) with emphasis on stability and protection issues, and ac loss for REBCO coated conductors.

  19. Flexible eddy current coil arrays

    International Nuclear Information System (INIS)

    Krampfner, Y.; Johnson, D.P.

    1987-01-01

    A novel approach was devised to overcome certain limitations of conventional eddy current testing. The typical single-element hand-wound probe was replaced with a two dimensional array of spirally wound probe elements deposited on a thin, flexible polyimide substrate. This provides full and reliable coverage of the test area and eliminates the need for scanning. The flexible substrate construction of the array allows the probes to conform to irregular part geometries, such as turbine blades and tubing, thereby eliminating the need for specialized probes for each geometry. Additionally, the batch manufacturing process of the array can yield highly uniform and reproducible coil geometries. The array is driven by a portable computer-based eddy current instrument, smartEDDY/sup TM/, capable of two-frequency operation, and offers a great deal of versatility and flexibility due to its software-based architecture. The array is coupled to the instrument via an 80-switch multiplexer that can be configured to address up to 1600 probes. The individual array elements may be addressed in any desired sequence, as defined by the software

  20. Neutron activation analysis of thin orange pottery

    International Nuclear Information System (INIS)

    Harbottle, G.; Sayre, E.V.; Abascal, R.

    1976-01-01

    The evidence thus far obtained supports the idea of ''Thin Orange'' ware, typical of classic Teotihuacan culture, easily identifiable petrographically or chemically, not necessarily made at Teotihuacan itself but widely traded, and ''thin, orange'' pottery, fabricated in many other places, and perhaps at other times as well

  1. Profitability of Precommericially Thinning Oak Stump Sprouts

    Science.gov (United States)

    John P. Dwyer; Daniel C. Dey; William B. Kurtz

    1993-01-01

    Thinning oak stump sprouts to a single stem at an early age will increase diameter growth of the released stem. However, percommercial thinning represents a substantial investment which must be carried for many years before any returns are realized. We estimated the incremental gains in yield and the present net worth for five crop-tree release treatments of 5-yr-old...

  2. Profitability of precommercially thinning oak stump sprouts

    Science.gov (United States)

    John P. Dwyer; Daniel C. Dey; William B. Kurtz

    1993-01-01

    Thinning oak stump sprouts to a single stem at an early age will increase diameter growth of the released stem. However, precommercial thinning represents a substantial investment which must be carried for many years before any returns are realized. We estimated the incremental gains in yield and the present net worth for five crop-tree release treatments of 5-year-old...

  3. Characterization of nanocrystalline cadmium telluride thin films ...

    Indian Academy of Sciences (India)

    Unknown

    tion method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films ... By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film .... The electrical resistivity of CdTe films was studied in air. Figure 3 shows the variation of log ...

  4. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  5. Ranking Thinning Potential of Lodgepole Pine Stands

    OpenAIRE

    United States Department of Agriculture, Forest Service

    1987-01-01

    This paper presents models for predicting edge-response of dominant and codominant trees to clearing. Procedures are given for converting predictions to a thinning response index, for ranking stands for thinning priority. Data requirements, sampling suggestions, examples of application, and suggestions for management use are included to facilitate use as a field guide.

  6. Delamination of Compressed Thin Layers at Corners

    DEFF Research Database (Denmark)

    Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

    2008-01-01

    An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...

  7. Analyzing Investments in Thin-Kerf Saws

    Science.gov (United States)

    Philip H. Steele; Philip A. Araman

    1996-01-01

    The rising cost of hardwood sawlogs has increasd sawmill managers' interest in considering the installation of thin-kerf sawing machines in their sawmills. Replacement of circular headrigs by band headrigs and/or reducing resaw kerfs are the available options. Equipment replacement or modification to achieve thin-kerf sawing will require an investment. Sawmill...

  8. Excimer Laser Deposition of PLZT Thin Films

    National Research Council Canada - National Science Library

    Petersen, GAry

    1991-01-01

    .... In order to integrate these devices into optical systems, the production of high quality thin films with high transparency and perovskite crystal structure is desired. This requires development of deposition technologies to overcome the challenges of depositing and processing PLZT thin films.

  9. Neutron activation analysis of thin orange pottery

    Energy Technology Data Exchange (ETDEWEB)

    Harbottle, G; Sayre, E V; Abascal, R

    1976-01-01

    The evidence thus far obtained supports the idea of ''Thin Orange'' ware, typical of classic Teotihuacan culture, easily identifiable petrographically or chemically, not necessarily made at Teotihuacan itself but widely traded, and ''thin, orange'' pottery, fabricated in many other places, and perhaps at other times as well.

  10. Thin films of mixed metal compounds

    Science.gov (United States)

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  11. Field ion microscope studies on thin films

    International Nuclear Information System (INIS)

    Cavaleru, A.; Scortaru, A.

    1976-01-01

    A review of the progress made in the last years in FIM application to thin film structure studies and adatom properties important in the nucleation stage of thin film growth: substrate binding and mobility of individual adatoms, behaviour of adatoms clusters is presented. (author)

  12. AC Transport Current Loss in a Coated Superconductor in the Bean Model

    National Research Council Canada - National Science Library

    Carr, Jr, W. J

    2004-01-01

    A new and straightforward calculation is made of the loss in a very thin superconducting strip of rectangular cross section carrying ac transport current in zero applied magnetic field, with a similar...

  13. Progress in thin film techniques

    International Nuclear Information System (INIS)

    Weingarten, W.

    1996-01-01

    Progress since the last Workshop is reported on superconducting accelerating RF cavities coated with thin films. The materials investigated are Nb, Nb 3 Sn, NbN and NbTiN, the techniques applied are diffusion from the vapour phase (Nb 3 Sn, NbN), the bronze process (Nb 3 Sn), and sputter deposition on a copper substrate (Nb, NbTiN). Specially designed cavities for sample evaluation by RF methods have been developed (triaxial cavity). New experimental techniques to assess the RF amplitude dependence of the surface resistance are presented (with emphasis on niobium films sputter deposited on copper). Evidence is increasing that they are caused by magnetic flux penetration into the surface layer. (R.P.)

  14. High temperature superconductor thin films

    International Nuclear Information System (INIS)

    Correra, L.

    1992-01-01

    Interdisciplinary research on superconducting oxides is the main focus of the contributors in this volume. Several aspects of the thin film field from fundamental properties to applications are examined. Interesting results for the Bi system are also reviewed. The 132 papers, including 8 invited, report mainly on the 1-2-3 system, indicating that the Y-Ba-Cu-O and related compounds are still the most intensively studied materials in this field. The volume attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved. The papers are presented in five chapters, subsequently on properties, film growth and processing, substrates and multilayers, structural characterization, and applications

  15. Experimental observations of the tearing of an electron current sheet

    International Nuclear Information System (INIS)

    Gekelman, W.; Pfister, H.

    1988-01-01

    A neutral magnetic sheet, in which the current is carried mainly by the electrons, is set up in a laboratory plasma. By forcing the current through a thin slot, the ratio of the length to height t of the sheet may be varied; the current is observed to tear when tapprox. >30. The structure of the magnetic islands and their associated currents is fully three dimensional, although a linear two-dimensional theory gives a very good estimate of the tearing mode growth time. Tearing is accompanied by the generation of significant Hall currents, and magnetic disturbances are observed to propagate at the whistler wave speed

  16. Electrodeposition of thin Pd-Ag films

    International Nuclear Information System (INIS)

    Hasler, P.; Allmendinger, T.

    1993-01-01

    Thin Pd-Ag layers were electroplated preferably on brass and on nickel substrates using a two-compartment cell separated by an anion exchange membrane. The weakly alkaline electrolyte contained glycine-glycinate as the major complexing agents. The plating experiments were usually carried out without stirring, at different potentials and temperatures and in the absence or in the presence of sodium benzaldehyde-2,4-disulphonate (BDS). The samples were characterized by scanning electron microscopy and light microscopy. Their compositions were determined analytically by the inductively coupled plasma technique. In addition, the film porosity was tested. Electrodeposition in almost limiting current conditions for both components and without simultaneous hydrogen evolution led to deposits with compositions being in good agreement with the molar metal ratio in the electrolyte (77:23). The best results were achieved between 0 and -50 mV with respect to a reversible hydrogen electrode at 0 C in the presence of BDS. These deposits were bright, had good adherence and exhibited no pores at a film thickness of 1.2 μm. At too negative potentials, the deposits became black and powdery. (orig.)

  17. Thick or Thin Ice Shell on Europa?

    Science.gov (United States)

    2007-01-01

    Scientists are all but certain that Europa has an ocean underneath its icy surface, but they do not know how thick this ice might be. This artist concept illustrates two possible cut-away views through Europa's ice shell. In both, heat escapes, possibly volcanically, from Europa's rocky mantle and is carried upward by buoyant oceanic currents. If the heat from below is intense and the ice shell is thin enough (left), the ice shell can directly melt, causing what are called 'chaos' on Europa, regions of what appear to be broken, rotated and tilted ice blocks. On the other hand, if the ice shell is sufficiently thick (right), the less intense interior heat will be transferred to the warmer ice at the bottom of the shell, and additional heat is generated by tidal squeezing of the warmer ice. This warmer ice will slowly rise, flowing as glaciers do on Earth, and the slow but steady motion may also disrupt the extremely cold, brittle ice at the surface. Europa is no larger than Earth's moon, and its internal heating stems from its eccentric orbit about Jupiter, seen in the distance. As tides raised by Jupiter in Europa's ocean rise and fall, they may cause cracking, additional heating and even venting of water vapor into the airless sky above Europa's icy surface. (Artwork by Michael Carroll.)

  18. Nanostructured refractory thin films for solar applications

    Science.gov (United States)

    Ollier, E.; Dunoyer, N.; Dellea, O.; Szambolics, H.

    2014-08-01

    Selective solar absorbers are key elements of all solar thermal systems. Solar thermal panels and Concentrated Solar Power (CSP) systems aim respectively at producing heat and electricity. In both cases, a surface receives the solar radiation and is designed to have the highest optical absorption (lowest optical reflectivity) of the solar radiation in the visible wavelength range where the solar intensity is the highest. It also has a low emissivity in the infrared (IR) range in order to avoid radiative thermal losses. Current solutions in the state of the art usually consist in deposited interferential thin films or in cermets [1]. Structured surfaces have been proposed and have been simulated because they are supposed to be more efficient when the solar radiation is not normal to the receiving surface and because they could potentially be fabricated with refractory materials able to sustain high operating temperatures. This work presents a new method to fabricate micro/nanostructured surfaces on molybdenum (refractory metal with a melting temperature of 2623°C). This method now allows obtaining a refractory selective surface with an excellent optical selectivity and a very high absorption in the visible range. This high absorption performance was obtained by achieving a double structuration at micro and nano scales thanks to an innovative process flow.

  19. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  20. Thinning spatial point processes into Poisson processes

    DEFF Research Database (Denmark)

    Møller, Jesper; Schoenberg, Frederic Paik

    2010-01-01

    are identified, and where we simulate backwards and forwards in order to obtain the thinned process. In the case of a Cox process, a simple independent thinning technique is proposed. In both cases, the thinning results in a Poisson process if and only if the true Papangelou conditional intensity is used, and......In this paper we describe methods for randomly thinning certain classes of spatial point processes. In the case of a Markov point process, the proposed method involves a dependent thinning of a spatial birth-and-death process, where clans of ancestors associated with the original points......, thus, can be used as a graphical exploratory tool for inspecting the goodness-of-fit of a spatial point process model. Several examples, including clustered and inhibitive point processes, are considered....

  1. Thinning spatial point processes into Poisson processes

    DEFF Research Database (Denmark)

    Møller, Jesper; Schoenberg, Frederic Paik

    , and where one simulates backwards and forwards in order to obtain the thinned process. In the case of a Cox process, a simple independent thinning technique is proposed. In both cases, the thinning results in a Poisson process if and only if the true Papangelou conditional intensity is used, and thus can......This paper describes methods for randomly thinning certain classes of spatial point processes. In the case of a Markov point process, the proposed method involves a dependent thinning of a spatial birth-and-death process, where clans of ancestors associated with the original points are identified...... be used as a diagnostic for assessing the goodness-of-fit of a spatial point process model. Several examples, including clustered and inhibitive point processes, are considered....

  2. Delamination of Compressed Thin Layers at Corners

    DEFF Research Database (Denmark)

    Sørensen, Kim D.; Jensen, Henrik Myhre; Clausen, Johan

    2008-01-01

    An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat s...... layers, Fracture mechanics, Crack closure, Steady state crack propagation.......An analysis of delamination for a thin elastic layer under compression, attached to a substrate at a corner is carried out. The analysis is performed by combining results from interface fracture mechanics and the theory of thin shells. In contrast with earlier results for delamination on a flat...... results for the fracture mechanical properties have been obtained, and these are applied in a study of the effect of contacting crack faces. Special attention has been given to analyse conditions under which steady state propagation of buckling driven delamination takes place. Keywords: Delamination, Thin...

  3. Thin Film Packaging Solutions for High Efficiency OLED Lighting Products

    Energy Technology Data Exchange (ETDEWEB)

    None

    2008-06-30

    The objective of the 'Thin Film Packaging Solutions for High Efficiency OLED Lighting Products' project is to demonstrate thin film packaging solutions based on SiC hermetic coatings that, when applied to glass and plastic substrates, support OLED lighting devices by providing longer life with greater efficiency at lower cost than is currently available. Phase I Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on optical glass with lifetime of 1,000 hour life, CRI greater than 75, and 15 lm/W. Phase II Objective: Demonstrate thin film encapsulated working phosphorescent OLED devices on plastic or glass composite with 25 lm/W, 5,000 hours life, and CRI greater than 80. Phase III Objective: Demonstrate 2 x 2 ft{sup 2} thin film encapsulated working phosphorescent OLED with 40 lm/W, 10,000 hour life, and CRI greater than 85. This report details the efforts of Phase III (Budget Period Three), a fourteen month collaborative effort that focused on optimization of high-efficiency phosphorescent OLED devices and thin-film encapsulation of said devices. The report further details the conclusions and recommendations of the project team that have foundation in all three budget periods for the program. During the conduct of the Thin Film Packaging Solutions for High Efficiency OLED Lighting Products program, including budget period three, the project team completed and delivered the following achievements: (1) a three-year marketing effort that characterized the near-term and longer-term OLED market, identified customer and consumer lighting needs, and suggested prototype product concepts and niche OLED applications lighting that will give rise to broader market acceptance as a source for wide area illumination and energy conservation; (2) a thin film encapsulation technology with a lifetime of nearly 15,000 hours, tested by calcium coupons, while stored at 16 C and 40% relative humidity ('RH'). This encapsulation technology

  4. Physical processes for the onset of magnetospheric substorms

    International Nuclear Information System (INIS)

    Kan, J.R.; Akasofu, S-I.; Lee, L.C.

    1980-01-01

    There are at least three important advances in observational as well as theoretical understanding of substorm processes during the last several years; they are: (i) the 'V-shaped' potential structure for auroral acceleration, (ii) deflation as the cause of thinning of the distant plasma sheet, and (iii) interruption and subsequent diversion of the cross-tail current during the expansive phase of magnetospheric substorms. A possible chain of processes is suggested, including (i), (ii) and (iii) as vital parts, which leads to substorm onset. (Auth.)

  5. Current lead thermal analysis code 'CURRENT'

    International Nuclear Information System (INIS)

    Yamaguchi, Masahito; Tada, Eisuke; Shimamoto, Susumu; Hata, Kenichiro.

    1985-08-01

    Large gas-cooled current lead with the capacity more than 30 kA and 22 kV is required for superconducting toroidal and poloidal coils for fusion application. The current lead is used to carry electrical current from the power supply system at room temperature to the superconducting coil at 4 K. Accordingly, the thermal performance of the current lead is significantly important to determine the heat load requirements of the coil system at 4 K. Japan Atomic Energy Research Institute (JAERI) has being developed the large gas-cooled current leads with the optimum condition in which the heat load is around 1 W per 1 kA at 4 K. In order to design the current lead with the optimum thermal performances, JAERI developed thermal analysis code named as ''CURRENT'' which can theoretically calculate the optimum geometric shape and cooling conditions of the current lead. The basic equations and the instruction manual of the analysis code are described in this report. (author)

  6. Environmental influences on the performance of thin film solar cells

    International Nuclear Information System (INIS)

    Gottschalg, Ralph

    2001-01-01

    The response of thin film photovoltaic devices to changes in the environment is not well understood. There are a large number of conflicting reports, reflecting largely the superimposed nature of the environmental effects. A separation of the effects is not often attempted mainly because of the lack of appropriate spectral data. An experimental system has been designed and operated to facilitate the separation of the environmental effects, including spectral effects. This involves measurements in a controlled laboratory environment as well as outdoor monitoring. Furthermore, a number of analysis tools have been developed and tested for their suitability. In order to develop a system model, the applicability of parametric models for thin film devices is probed. The thermal variation of the underlying physical parameters is investigated and problems of describing thin film devices with parametric models are discussed. It is shown that the magnitude of the spectral effects for thin film devices is potentially much more significant than for conventional crystalline silicon devices. This analysis is centred on the primary spectral effect, i.e. it is conducted purely on the basis of available light and does not consider any absorption profiles or device structures. It is also shown that there is a strong daily and seasonal variation in the fraction of the useful light for devices employing a larger band gap. Environmental effects are observed directly from outdoor measurements. It is apparent that many of the reported idiosyncrasies occurring during the operation of thin film devices can be explained simply by including spectral effects. It is possible to show the secondary spectral effect for multi-junction devices, i.e. an effect that depends on the composition of the solar irradiance and not purely on the magnitude of spectrally useful irradiance. This effect impacts mainly on the short circuit current and to some extent on the fill factor. Finally, the findings of

  7. Nano-enabled tribological thin film coatings: global patent scenario.

    Science.gov (United States)

    Sivudu, Kurva S; Mahajan, Yashwant R; Joshi, Shrikant V

    2014-01-01

    The aim of this paper is to present current status and future prospects of nano-enabled tribological thin film coatings based on worldwide patent landscape analysis. The study also presents an overview of technological trends by carrying out state-of-the-art literature analysis, including survey of corporate websites. Nanostructured tribological coatings encompass a wide spectrum of nanoscale microstructures, including nanocrystalline, nanolayered, nano-multilayered, nanocomposite, nanogradient structures or their unique combinations, which are composed of single or multi-component phases. The distinct microstructural features of the coatings impart outstanding tribological properties combined with multifunctional attributes to the coated components. Their unique combination of remarkable properties make them ideal candidates for a wide range of applications in diverse fields such as cutting and metalworking tools, biomedical devices, automotive engine components, wear parts, hard disc drives etc. The patent landscape analysis has revealed that nano-enabled tribological thin film coatings have significant potential for commercial applications in view of the lion's share of corporate industry in patenting activity. The largest patent portfolio is held by Japan followed by USA, Germany, Sweden and China. The prominent players involved in this field are Mitsubishi Materials Corp., Sandvik Aktiebolag, Hitachi Ltd., Sumitomo Electric Industries Ltd., OC Oerlikon Corp., and so on. The outstanding potential of nanostructured thin film tribological coatings is yet to be fully unravelled and, therefore, immense opportunities are available in future for microstructurally engineered novel coatings to enhance their performance and functionality by many folds.

  8. Crystallization kinetics of a-Se, part 4: thin films

    Science.gov (United States)

    Svoboda, Roman; Gutwirth, Jan; Málek, Jiří

    2014-09-01

    Differential scanning calorimetry was used to study the crystallization behaviour of selenium thin films in dependence on film thickness and deposition rate. In the current work, which is the fourth in a sequence of articles dealing with crystallization kinetics of a-Se, the non-isothermal crystallization kinetics was described in terms of the Johnson-Mehl-Avrami nucleation-growth model. Two-dimensional crystallite growth, consistent with the idea of sterically restricted crystallization in a thin layer, was confirmed for all data. It was found that neither the film thickness (tested within the 100-2350 nm range) nor the deposition rate appears to have any significant influence on the crystallization kinetics. However, the higher amount of intrinsic defects possibly produced by a higher deposition rate seems to accelerate the crystallization, shifting it towards lower temperatures. Very good correlation between the results obtained for thin films and those for fine powders was found. Based on the obtained results, interpretations of relevant literature data were made.

  9. Liquid crystals for organic thin-film transistors

    Science.gov (United States)

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  10. Force-free thin flux tubes: Basic equations and stability

    International Nuclear Information System (INIS)

    Zhugzhda, Y.D.

    1996-01-01

    The thin flux tube approximation is considered for a straight, symmetrical, force-free, rigidly rotating flux tube. The derived set of equations describes tube, body sausage, and Alfveacute charn wave modes and is valid for any values of Β. The linear waves and instabilities of force-free flux tubes are considered. The comparison of approximate and exact solutions for an untwisted, nonrotating flux tube is performed. It is shown that the approximate and exact dispersion equations coincides, except the 20% discrepancy of sausage frequencies. An effective cross section is proposed to introduce the removal of this discrepancy. It makes the derived approximation correct for the force-free thin flux tube dynamics, except the detailed structure of radial eigenfunction. The dispersion of Alfveacute charn torsional waves in a force-free tubes appears. The valve effect of one directional propagation of waves in rotating twisted tube is revealed. The current and rotational sausage instabilities of a force-free, thin flux tube are considered. copyright 1996 American Institute of Physics

  11. A novel design of submicron thin film point contacts

    International Nuclear Information System (INIS)

    Koch, H.

    1986-01-01

    A thin film point contact design applicable to SIS-, SNS-, and microbridge-type Josephson junctions is presented, which offers potentially advanced junction characteristics (low capacitance, low stray inductance, increased quasi-particle resistance). The design philosophy is based on the fact that a point contact results if two planes having a common symmetry axis but oriented perpendicular to each other are brought into contact with each other. For the case of thin films, instead of two-dimensional planes, the cross section of the resulting ''point''-contact is defined by the thicknesses of the two thin films. Film thicknesses can be controlled much more precisely than lateral dimensions created by lithography. Hence, submicron junction geometries can be achieved using only conventional fabrication techniques. Following this idea, Josephson weak links of the ultrashort microbridge-type have been fabricated by an all-Nb technique having a 0.3-μm X 0.2-μm cross section with a R /SUB q/ I /SUB c/ product (R /SUB q/ = quasiparticle resistance, I /SUB c/ = critical current) of more than 20 mV

  12. Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films

    International Nuclear Information System (INIS)

    Liu, P.; Chen, T.P.; Liu, Z.; Tan, C.S.; Leong, K.C.

    2013-01-01

    Evolution of electrical properties and thin-film transistor characteristics of amorphous indium gallium zinc oxide (IGZO) thin films synthesized by RF sputtering with O 2 plasma immersion has been examined. O 2 plasma immersion results in an enhancement in the Hall mobility and a decrease in the electron concentration; and the transistor performance can be greatly improved by the O 2 plasma immersion. X-ray photoelectron spectroscopy analysis indicates that the effect of O 2 plasma immersion on the electrical properties and the transistor performance can be attributed to the reduction of the oxygen-related defects in the IGZO thin films. - Highlights: • Oxygen plasma immersion effect on indium gallium zinc oxide thin film properties • Oxygen-related defect reduces in the InGaZnO thin film with oxygen plasma immersion. • Increasing oxygen plasma immersion duration on device will decrease the off current. • Oxygen plasma immersion enhances the performance of device

  13. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

    2011-11-15

    Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Manipulating Josephson junctions in thin-films by nearby vortices

    International Nuclear Information System (INIS)

    Kogan, V.G.; Mints, R.G.

    2014-01-01

    Highlights: • Vortex located in a bank of a planar Josephson junction changes its character. • Vortex located at some discreet positions in thin strip bank suppresses to zero the zero-field current. • The number of these positions is equal to the number of vortices trapped. • Critical current-field patterns are strongly affected by the vortex position. - Abstract: It is shown that a vortex trapped in one of the banks of a planar edge-type Josephson junction in a narrow thin-film superconducting strip can change drastically the dependence of the junction critical current on the applied field, I c (H). When the vortex is placed at certain discrete positions in the strip middle, the pattern I c (H) has zero at H=0 instead of the traditional maximum of ‘0-type’ junctions. The number of these positions is equal to the number of vortices trapped at the same location. When the junction–vortex separation exceeds ∼W, the strip width, I c (H) is no longer sensitive to the vortex presence. The same is true for any separation if the vortex approaches the strip edges

  15. CMOS current controlled fully balanced current conveyor

    International Nuclear Information System (INIS)

    Wang Chunhua; Zhang Qiujing; Liu Haiguang

    2009-01-01

    This paper presents a current controlled fully balanced second-generation current conveyor circuit (CF-BCCII). The proposed circuit has the traits of fully balanced architecture, and its X-Y terminals are current controllable. Based on the CFBCCII, two biquadratic universal filters are also proposed as its applications. The CFBCCII circuits and the two filters were fabricated with chartered 0.35-μm CMOS technology; with ±1.65 V power supply voltage, the total power consumption of the CFBCCII circuit is 3.6 mW. Comparisons between measured and HSpice simulation results are also given.

  16. Enhanced pinning in superconducting thin films with graded pinning landscapes

    Science.gov (United States)

    Motta, M.; Colauto, F.; Ortiz, W. A.; Fritzsche, J.; Cuppens, J.; Gillijns, W.; Moshchalkov, V. V.; Johansen, T. H.; Sanchez, A.; Silhanek, A. V.

    2013-05-01

    A graded distribution of antidots in superconducting a-Mo79Ge21 thin films has been investigated by magnetization and magneto-optical imaging measurements. The pinning landscape has maximum density at the sample border, decreasing linearly towards the center. Its overall performance is noticeably superior than that for a sample with uniformly distributed antidots: For high temperatures and low fields, the critical current is enhanced, whereas the region of thermomagnetic instabilities in the field-temperature diagram is significantly suppressed. These findings confirm the relevance of graded landscapes on the enhancement of pinning efficiency, as recently predicted by Misko and Nori [Phys. Rev. B 85, 184506 (2012)].

  17. Josephson soliton oscillators in a superconducting thin film resonator

    DEFF Research Database (Denmark)

    Holm, J.; Mygind, Jesper; Pedersen, Niels Falsig

    1993-01-01

    Josephson soliton oscillators integrated in a resonator consisting of two closely spaced coplanar superconducting microstrips have been investigated experimentally. Pairs of long 1-D Josephson junctions with a current density of about 1000 A/cm2 were made using the Nb-AlOx-Nb trilayer technique....... Different modes of half-wave resonances in the thin-film structure impose different magnetic field configurations at the boundaries of the junctions. The DC I-V characteristic shows zero-field steps with a number of resonator-induced steps. These structures are compared to RF-induced steps generated...

  18. Simulation model for electron irradiated IGZO thin film transistors

    Science.gov (United States)

    Dayananda, G. K.; Shantharama Rai, C.; Jayarama, A.; Kim, Hyun Jae

    2018-02-01

    An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In-Ga-Zn-O (IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.

  19. Studying the noise parameters of thin-film silicon resistors

    International Nuclear Information System (INIS)

    Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

    1986-01-01

    The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

  20. Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

    International Nuclear Information System (INIS)

    Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

    2007-01-01

    Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

  1. Thin-film intermediate band chalcopyrite solar cells

    International Nuclear Information System (INIS)

    Fuertes Marron, D.; Marti, A.; Luque, A.

    2009-01-01

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  2. Thinning in artificially regenerated young beech stands

    Directory of Open Access Journals (Sweden)

    Novák Jiří

    2015-12-01

    Full Text Available Although beech stands are usually regenerated naturally, an area of up to 5,000 ha year−1 is artificially regenerated by beech in the Czech Republic annually. Unfortunately, these stands often showed insufficient stand density and, consequently, lower quality of stems. Therefore, thinning methods developed for naturally regenerated beech stands are applicable with difficulties. The paper evaluates the data from two thinning experiments established in young artificially regenerated beech stands located in different growing conditions. In both experiments, thinning resulted in the lower amount of salvage cut in following years. Positive effect of thinning on periodic stand basal area increment and on periodic diameter increment of dominant trees was found in the beech stand located at middle elevations. On the other hand, thinning effects in mountain conditions were negligible. Thinning focusing on future stand quality cannot be commonly applied in artificially regenerated beech stands because of their worse initial quality and lower density. However, these stands show good growth and response to thinning, hence their management can be focused on maximising beech wood production.

  3. Electrical transport properties of thermally evaporated phthalocyanine (H 2Pc) thin films

    Science.gov (United States)

    El-Nahass, M. M.; Farid, A. M.; Attia, A. A.; Ali, H. A. M.

    2006-08-01

    Thin films of H 2Pc of various thicknesses have been deposited onto glass substrates using thermal evaporation technique at room temperature. The dark electrical resistivity measurements were carried out at different temperatures in the range 298-473 K. An estimation of mean free path ( lo) of charge carriers in H 2Pc thin films was attempted. Measurements of thermoelectric power confirm that H 2Pc thin films behave as a p-type semiconductor. The current density-voltage characteristics of Au/H 2Pc/Au at room temperature showed ohmic conduction mechanism at low voltages. At higher voltages the space-charge-limited conduction (SCLC) accompanied by an exponential trap distribution was dominant. The temperature dependence of current density allows the determination of some essential parameters such as the hole mobility ( μh), the total trap concentration ( Nt), the characteristic temperature ( Tt) and the trap density P( E).

  4. Macro stress mapping on thin film buckling

    Energy Technology Data Exchange (ETDEWEB)

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  5. Weld Repair of Thin Aluminum Sheet

    Science.gov (United States)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  6. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  7. Cryogenic current leads

    Energy Technology Data Exchange (ETDEWEB)

    Zizek, F.

    1982-01-01

    Theoretical, technical and design questions are examined of cryogenic current leads for SP of magnetic systems. Simplified mathematical models are presented for the current leads. To illustrate modeling, the calculation is made of the real current leads for 500 A and three variants of current leads for 1500 A for the enterprise ''Shkoda.''

  8. Investigation of the optical property and structure of WO3 thin films with different sputtering depositions

    Science.gov (United States)

    Chen, Hsi-Chao; Jan, Der-Jun; Chen, Chien-Han; Huang, Kuo-Ting; Lo, Yen-Ming; Chen, Sheng-Hui

    2011-09-01

    The purpose of this research was to compare the optical properties and structure of tungsten oxide (WO3) thin films that was deposited by different sputtering depositions. WO3 thin films deposited by two different depositions of direct current (DC) magnetron sputtering and pulsed DC sputtering. A 99.95% WO3 target was used as the starting material for these depositions. These WO3 thin films were deposited on the ITO glass, PET and silicon substrate by different ratios of oxygen and argon. A shadow moiré interferometer would be introduced to measure the residual stress for PET substrate. RF magnetron sputtering had the large residual stress than the other's depositions. A Raman spectrum could exhibit the phase of oxidation of WO3 thin film by different depositions. At the ratio of oxygen and argon was about 1:1, and the WO3 thin films had the best oxidation. However, it was important at the change of the transmittance (ΔT = Tbleached - Tcolored) between the coloring and bleaching for the smart window. Therefore, we also found the WO3 thin films had the large variation of transmittance between the coloring and bleaching at the gas ratios of oxygen and argon of 1:1.

  9. Atmospheric Pressure Plasma Jet-Assisted Synthesis of Zeolite-Based Low-k Thin Films.

    Science.gov (United States)

    Huang, Kai-Yu; Chi, Heng-Yu; Kao, Peng-Kai; Huang, Fei-Hung; Jian, Qi-Ming; Cheng, I-Chun; Lee, Wen-Ya; Hsu, Cheng-Che; Kang, Dun-Yen

    2018-01-10

    Zeolites are ideal low-dielectric constant (low-k) materials. This paper reports on a novel plasma-assisted approach to the synthesis of low-k thin films comprising pure-silica zeolite MFI. The proposed method involves treating the aged solution using an atmospheric pressure plasma jet (APPJ). The high reactivity of the resulting nitrogen plasma helps to produce zeolite crystals with high crystallinity and uniform crystal size distribution. The APPJ treatment also remarkably reduces the time for hydrothermal reaction. The zeolite MFI suspensions synthesized with the APPJ treatment are used for the wet deposition to form thin films. The deposited zeolite thin films possessed dense morphology and high crystallinity, which overcome the trade-off between crystallinity and film quality. Zeolite thin films synthesized using the proposed APPJ treatment achieve low leakage current (on the order of 10 -8 A/cm 2 ) and high Young's modulus (12 GPa), outperforming the control sample synthesized without plasma treatment. The dielectric constant of our zeolite thin films was as low as 1.41. The overall performance of the low-k thin films synthesized with the APPJ treatment far exceed existing low-k films comprising pure-silica MFI.

  10. X-ray diffraction from thin films : Size/strain analysis and whole pattern fitting

    Energy Technology Data Exchange (ETDEWEB)

    Scardi, P [Trento Univ. (Italy). Dept. of Materials Engineering

    1996-09-01

    Line Profile Analysis (LPA) and whole pattern fitting may be used with success for the characterization of thin films from XRD data collected with the traditional Bragg-Brentano geometry. The size/strain analysis was conducted by an integrated procedure of profile modelling-assisted Fourier analysis, in order to measure the content of lattice imperfections and crystalline domain size along the growth direction in heteroepitaxial thin films. The microstructure of these films is typical of several PVD processes for the production of highly textured and low-defect thin crystalline layers. The same analysis could be conducted on random thin films as well, and in this case it is possible to determine an average crystallite size and shape. As will be shown in the paper, structural and microstructural parameters obtained by these methods may be correlated with thin film properties of technological interest. The whole pattern analysis may be used to obtain the information contained in a wide region of the diffraction pattern. This approach, currently used for the quantitative analysis of phase mixtures in traditional powder samples, was modified to account both for the size/strain effects, according to a simplified LPA, and for the structure of thin films and multi-layer systems. In this way, a detailed analysis based on a structural model for the present phases can be performed considering the real geometry of these samples. In particular, the quantitative phase analysis could be conducted in terms of layer thickness instead of volume or weight fractions.

  11. X-ray diffraction from thin films : Size/strain analysis and whole pattern fitting

    International Nuclear Information System (INIS)

    Scardi, P.

    1996-01-01

    Line Profile Analysis (LPA) and whole pattern fitting may be used with success for the characterization of thin films from XRD data collected with the traditional Bragg-Brentano geometry. The size/strain analysis was conducted by an integrated procedure of profile modelling-assisted Fourier analysis, in order to measure the content of lattice imperfections and crystalline domain size along the growth direction in heteroepitaxial thin films. The microstructure of these films is typical of several PVD processes for the production of highly textured and low-defect thin crystalline layers. The same analysis could be conducted on random thin films as well, and in this case it is possible to determine an average crystallite size and shape. As will be shown in the paper, structural and microstructural parameters obtained by these methods may be correlated with thin film properties of technological interest. The whole pattern analysis may be used to obtain the information contained in a wide region of the diffraction pattern. This approach, currently used for the quantitative analysis of phase mixtures in traditional powder samples, was modified to account both for the size/strain effects, according to a simplified LPA, and for the structure of thin films and multi-layer systems. In this way, a detailed analysis based on a structural model for the present phases can be performed considering the real geometry of these samples. In particular, the quantitative phase analysis could be conducted in terms of layer thickness instead of volume or weight fractions

  12. Chalcogenide phase-change thin films used as grayscale photolithography materials.

    Science.gov (United States)

    Wang, Rui; Wei, Jingsong; Fan, Yongtao

    2014-03-10

    Chalcogenide phase-change thin films are used in many fields, such as optical information storage and solid-state memory. In this work, we present another application of chalcogenide phase-change thin films, i.e., as grayscale photolithgraphy materials. The grayscale patterns can be directly inscribed on the chalcogenide phase-change thin films by a single process through direct laser writing method. In grayscale photolithography, the laser pulse can induce the formation of bump structure, and the bump height and size can be precisely controlled by changing laser energy. Bumps with different height and size present different optical reflection and transmission spectra, leading to the different gray levels. For example, the continuous-tone grayscale images of lifelike bird and cat are successfully inscribed onto Sb(2)Te(3) chalcogenide phase-change thin films using a home-built laser direct writer, where the expression and appearance of the lifelike bird and cat are fully presented. This work provides a way to fabricate complicated grayscale patterns using laser-induced bump structures onto chalcogenide phase-change thin films, different from current techniques such as photolithography, electron beam lithography, and focused ion beam lithography. The ability to form grayscale patterns of chalcogenide phase-change thin films reveals many potential applications in high-resolution optical images for micro/nano image storage, microartworks, and grayscale photomasks.

  13. Ferroelectric properties of PZT/BFO multilayer thin films prepared using the sol-gel method.

    Science.gov (United States)

    Jo, Seo-Hyeon; Lee, Sung-Gap; Lee, Young-Hie

    2012-01-05

    In this study, Pb(Zr0.52Ti0.48)O3/BiFeO3 [PZT/BFO] multilayer thin films were fabricated using the spin-coating method on a Pt(200 nm)/Ti(10 nm)/SiO2(100 nm)/p-Si(100) substrate alternately using BFO and PZT metal alkoxide solutions. The coating-and-heating procedure was repeated several times to form the multilayer thin films. All PZT/BFO multilayer thin films show a void-free, uniform grain structure without the presence of rosette structures. The relative dielectric constant and dielectric loss of the six-coated PZT/BFO [PZT/BFO-6] thin film were approximately 405 and 0.03%, respectively. As the number of coatings increased, the remanent polarization and coercive field increased. The values for the BFO-6 multilayer thin film were 41.3 C/cm2 and 15.1 MV/cm, respectively. The leakage current density of the BFO-6 multilayer thin film at 5 V was 2.52 × 10-7 A/cm2.

  14. Energy Migration in Organic Thin Films--From Excitons to Polarons

    Science.gov (United States)

    Mullenbach, Tyler K.

    The rise of organic photovoltaic devices (OPVs) and organic light-emitting devices has generated interest in the physics governing exciton and polaron dynamics in thin films. Energy transfer has been well studied in dilute solutions, but there are emergent properties in thin films and greater complications due to complex morphologies which must be better understood. Despite the intense interest in energy transport in thin films, experimental limitations have slowed discoveries. Here, a new perspective of OPV operation is presented where photovoltage, instead of photocurrent, plays the fundamental role. By exploiting this new vantage point the first method of measuring the diffusion length (LD) of dark (non-luminescent) excitons is developed, a novel photodetector is invented, and the ability to watch exciton arrival, in real-time, at the donor-acceptor heterojunction is presented. Using an enhanced understanding of exciton migration in thin films, paradigms for enhancing LD by molecular modifications are discovered, and the first exciton gate is experimentally and theoretically demonstrated. Generation of polarons from exciton dissociation represents a second phase of energy migration in OPVs that remains understudied. Current approaches are capable of measuring the rate of charge carrier recombination only at open-circuit. To enable a better understanding of polaron dynamics in thin films, two new approaches are presented which are capable of measuring both the charge carrier recombination and transit rates at any OPV operating voltage. These techniques pave the way for a more complete understanding of charge carrier kinetics in molecular thin films.

  15. Photoconductivity of thin organic films

    International Nuclear Information System (INIS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-01-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C 60 ), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C 60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10 3 Ω m and 3 x 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10 8 Ω m in dark to 3.1 x 10 6 Ω m under the light.

  16. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  17. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  18. Current interruption transients calculation

    CERN Document Server

    Peelo, David F

    2014-01-01

    Provides an original, detailed and practical description of current interruption transients, origins, and the circuits involved, and how they can be calculated Current Interruption Transients Calculationis a comprehensive resource for the understanding, calculation and analysis of the transient recovery voltages (TRVs) and related re-ignition or re-striking transients associated with fault current interruption and the switching of inductive and capacitive load currents in circuits. This book provides an original, detailed and practical description of current interruption transients, origins,

  19. Carbon and water fluxes from ponderosa pine forests disturbed by wildfire and thinning.

    Science.gov (United States)

    Dore, S; Kolb, T E; Montes-Helu, M; Eckert, S E; Sullivan, B W; Hungate, B A; Kaye, J P; Hart, S C; Koch, G W; Finkral, A

    2010-04-01

    Disturbances alter ecosystem carbon dynamics, often by reducing carbon uptake and stocks. We compared the impact of two types of disturbances that represent the most likely future conditions of currently dense ponderosa pine forests of the southwestern United States: (1) high-intensity fire and (2) thinning, designed to reduce fire intensity. High-severity fire had a larger impact on ecosystem carbon uptake and storage than thinning. Total ecosystem carbon was 42% lower at the intensely burned site, 10 years after burning, than at the undisturbed site. Eddy covariance measurements over two years showed that the burned site was a net annual source of carbon to the atmosphere whereas the undisturbed site was a sink. Net primary production (NPP), evapotranspiration (ET), and water use efficiency were lower at the burned site than at the undisturbed site. In contrast, thinning decreased total ecosystem carbon by 18%, and changed the site from a carbon sink to a source in the first posttreatment year. Thinning also decreased ET, reduced the limitation of drought on carbon uptake during summer, and did not change water use efficiency. Both disturbances reduced ecosystem carbon uptake by decreasing gross primary production (55% by burning, 30% by thinning) more than total ecosystem respiration (TER; 33-47% by burning, 18% by thinning), and increased the contribution of soil carbon dioxide efflux to TER. The relationship between TER and temperature was not affected by either disturbance. Efforts to accurately estimate regional carbon budgets should consider impacts on carbon dynamics of both large disturbances, such as high-intensity fire, and the partial disturbance of thinning that is often used to prevent intense burning. Our results show that thinned forests of ponderosa pine in the southwestern United States are a desirable alternative to intensively burned forests to maintain carbon stocks and primary production.

  20. Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

    Science.gov (United States)

    Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

    2012-11-27

    The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

  1. Solid thin film materials for use in thin film charge-coupled devices

    International Nuclear Information System (INIS)

    Lynch, S.J.

    1983-01-01

    Solid thin films deposited by vacuum deposition were evaluated to ascertain their effectiveness for use in the manufacturing of charge-coupled devices (CCDs). Optical and electrical characteristics of tellurium and Bi 2 Te 3 solid thin films were obtained in order to design and to simulate successfully the operation of thin film (TF) CCDs. In this article some of the material differences between single-crystal material and the island-structured thin film used in TFCCDs are discussed. The electrical parameters were obtained and tabulated, e.g. the mobility, conductivity, dielectric constants, permittivity, lifetime of holes and electrons in the thin films and drift diffusion constants. The optical parameters were also measured and analyzed. After the design was complete, experimental TFCCDs were manufactured and were successfully operated utilizing the aforementioned solid thin films. (Auth.)

  2. A modified K3M thinning algorithm

    Directory of Open Access Journals (Sweden)

    Tabedzki Marek

    2016-06-01

    Full Text Available The K3M thinning algorithm is a general method for image data reduction by skeletonization. It had proved its feasibility in most cases as a reliable and robust solution in typical applications of thinning, particularly in preprocessing for optical character recognition. However, the algorithm had still some weak points. Since then K3M has been revised, addressing the best known drawbacks. This paper presents a modified version of the algorithm. A comparison is made with the original one and two other thinning approaches. The proposed modification, among other things, solves the main drawback of K3M, namely, the results of thinning an image after rotation with various angles.

  3. Thin Flexible IMM Solar Array, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Thin, flexible, and highly efficient solar arrays are needed that package compactly for launch and deploy into large, structurally stable high power generators....

  4. Thin fiber and textile reinforced cementitious systems

    National Research Council Canada - National Science Library

    Aldea, Corina-Maria

    2007-01-01

    This Special Publication (SP) contains ten papers which provide insight on the topics of state of the art of thin fiber and textile-reinforced cementitious systems both in academia and the industry...

  5. Method for making thin carbon foam electrodes

    Science.gov (United States)

    Pekala, Richard W.; Mayer, Steven T.; Kaschmitter, James L.; Morrison, Robert L.

    1999-01-01

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  6. Thin Flexible IMM Solar Array, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Inverted Metamorphic (IMM) solar cells have achieved high efficiency at very low mass, but integration of the thin crystalline photovoltaic device into a flexible...

  7. Mutation-specific effects on thin filament length in thin filament myopathy.

    Science.gov (United States)

    Winter, Josine M de; Joureau, Barbara; Lee, Eun-Jeong; Kiss, Balázs; Yuen, Michaela; Gupta, Vandana A; Pappas, Christopher T; Gregorio, Carol C; Stienen, Ger J M; Edvardson, Simon; Wallgren-Pettersson, Carina; Lehtokari, Vilma-Lotta; Pelin, Katarina; Malfatti, Edoardo; Romero, Norma B; Engelen, Baziel G van; Voermans, Nicol C; Donkervoort, Sandra; Bönnemann, C G; Clarke, Nigel F; Beggs, Alan H; Granzier, Henk; Ottenheijm, Coen A C

    2016-06-01

    Thin filament myopathies are among the most common nondystrophic congenital muscular disorders, and are caused by mutations in genes encoding proteins that are associated with the skeletal muscle thin filament. Mechanisms underlying muscle weakness are poorly understood, but might involve the length of the thin filament, an important determinant of force generation. We investigated the sarcomere length-dependence of force, a functional assay that provides insights into the contractile strength of muscle fibers as well as the length of the thin filaments, in muscle fibers from 51 patients with thin filament myopathy caused by mutations in NEB, ACTA1, TPM2, TPM3, TNNT1, KBTBD13, KLHL40, and KLHL41. Lower force generation was observed in muscle fibers from patients of all genotypes. In a subset of patients who harbor mutations in NEB and ACTA1, the lower force was associated with downward shifted force-sarcomere length relations, indicative of shorter thin filaments. Confocal microscopy confirmed shorter thin filaments in muscle fibers of these patients. A conditional Neb knockout mouse model, which recapitulates thin filament myopathy, revealed a compensatory mechanism; the lower force generation that was associated with shorter thin filaments was compensated for by increasing the number of sarcomeres in series. This allowed muscle fibers to operate at a shorter sarcomere length and maintain optimal thin-thick filament overlap. These findings might provide a novel direction for the development of therapeutic strategies for thin filament myopathy patients with shortened thin filament lengths. Ann Neurol 2016;79:959-969. © 2016 American Neurological Association.

  8. Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films

    Science.gov (United States)

    2013-01-01

    In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. PMID:23634999

  9. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  10. Accelerated stress testing of thin film solar cells: Development of test methods and preliminary results

    Science.gov (United States)

    Lathrop, J. W.

    1985-01-01

    If thin film cells are to be considered a viable option for terrestrial power generation their reliability attributes will need to be explored and confidence in their stability obtained through accelerated testing. Development of a thin film accelerated test program will be more difficult than was the case for crystalline cells because of the monolithic construction nature of the cells. Specially constructed test samples will need to be fabricated, requiring committment to the concept of accelerated testing by the manufacturers. A new test schedule appropriate to thin film cells will need to be developed which will be different from that used in connection with crystalline cells. Preliminary work has been started to seek thin film schedule variations to two of the simplest tests: unbiased temperature and unbiased temperature humidity. Still to be examined are tests which involve the passage of current during temperature and/or humidity stress, either by biasing in the forward (or reverse) directions or by the application of light during stress. Investigation of these current (voltage) accelerated tests will involve development of methods of reliably contacting the thin conductive films during stress.

  11. How forest context influences the acceptability of prescribed burning and mechanical thinning

    Science.gov (United States)

    Alan D. Bright; Peter Newman

    2006-01-01

    We examined how forest factors influenced public perceptions of three fuels management alternatives: prescribed burns, mechanical thinning, or no artificial fire management. The factors included the forest?s proximity to urban areas, primary use, wildfire history, and current fire conditions. Surveying three study strata with different wildfire histories and...

  12. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    International Nuclear Information System (INIS)

    Dersch, H.; Amer, N.M.

    1984-01-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

  13. Vortex pinning in superconducting Nb thin films deposited on nanoporous alumina templates

    DEFF Research Database (Denmark)

    Vinckx, W.; Vanacken, J.; Moshchalkov, V.V.

    2006-01-01

    We present a study of magnetization and transport properties of superconducting Nb thin films deposited on nanoporous aluminium oxide templates. Periodic oscillations in the critical temperature vs. field, matching effects in fields up to 700 mT and strongly enhanced critical currents were observed...

  14. Photoconductivity and photomagnetic electromotive force in InSb thin samples

    International Nuclear Information System (INIS)

    Mosanov, O.; Chonanova, O.G.; Annamamedov, A.G.; Padalko, A.G.; Redzhepov, M.

    1987-01-01

    Photoconductivity and photomagnetic effect in crossed electric and magnetic fields in thin (4 and 20 μm) InSb monocrystalline layers obtained from the melt by oriented crystallization are investigated. Possibility of controlling photomagnetic emf value by variation of the current value and polarity is shown

  15. Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells

    NARCIS (Netherlands)

    Ingenito, A.; Isabella, O.; Zeman, M.

    2014-01-01

    The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99%

  16. Structural and electrical properties of Ta2O5 thin films prepared by ...

    Indian Academy of Sciences (India)

    The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV- lamps. Effects of UV- lamp powers on the structural and electrical properties were discussed. Keywords. Chemical vapour deposition processes; oxides; dielectric material; MOS capacitor. 1. Introduction.

  17. Flush Mounting Of Thin-Film Sensors

    Science.gov (United States)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  18. Thin film description by wavelet coefficients statistics

    Czech Academy of Sciences Publication Activity Database

    Boldyš, Jiří; Hrach, R.

    2005-01-01

    Roč. 55, č. 1 (2005), s. 55-64 ISSN 0011-4626 Grant - others:GA UK(CZ) 173/2003 Institutional research plan: CEZ:AV0Z10750506 Keywords : thin films * wavelet transform * descriptors * histogram model Subject RIV: BD - Theory of Information Impact factor: 0.360, year: 2005 http://library.utia.cas.cz/separaty/2009/ZOI/boldys-thin film description by wavelet coefficients statistics .pdf

  19. Quench simulation in the thin superconducting solenoid

    International Nuclear Information System (INIS)

    Tominaka, T.; Takasaki, M.; Wake, M.; Yamada, R.

    1983-07-01

    The propagation velocities of a normal zone were calculated for a 1 mdiameter x 1 m superconducting solenoid and for a 3 mdiameter x 5 m thin solenoid based on a simple model using the one-dimensional thermal equation. The quench back effect can be observed in certain conditions. The quench of the large thin solenoid was also simulated by using the computer program 'QUENCH'. (author)

  20. LANSCE beam current limiter

    International Nuclear Information System (INIS)

    Gallegos, F.R.

    1996-01-01

    The Radiation Security System (RSS) at the Los Alamos Neutron Science Center (LANSCE) provides personnel protection from prompt radiation due to accelerated beam. Active instrumentation, such as the Beam Current Limiter, is a component of the RSS. The current limiter is designed to limit the average current in a beam line below a specific level, thus minimizing the maximum current available for a beam spill accident. The beam current limiter is a self-contained, electrically isolated toroidal beam transformer which continuously monitors beam current. It is designed as fail-safe instrumentation. The design philosophy, hardware design, operation, and limitations of the device are described