WorldWideScience

Sample records for thin conducting sheets

  1. EMAT Evaluation of Thin Conductive Sheets

    Directory of Open Access Journals (Sweden)

    Ivo Cap

    2006-01-01

    Full Text Available At present a non-destructive testing of conducting materials becomes very important one in connection with monitoring and control of strategic technical facilities, e.g. nuclear power plants. There are more methods of material testing and evaluation and every of them has its advantages and disadvantages. Recently the electromagnetic methods are in increasing interest. There are many ways of conducting material testing. One of them often used utilises investigation of eddy currents induced in the surface layer by means of a proper coil. The arrangement is very simple and inexpensive but it offers only local information on cracks and other inhomogeneities in the thin surface layer. On the other hand there exist a method based on an electromagnetic – acoustic transducer (EMAT, which is able to generate and detect acoustic wave in a conducting body in a contact-less way. The present paper deals with a survey of EMATs for investigation of thin metalliclayers by means of Lamb waves. The new design of generation coil is presented.

  2. Weld Repair of Thin Aluminum Sheet

    Science.gov (United States)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  3. Geometry of thin liquid sheet flows

    Science.gov (United States)

    Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

    1994-01-01

    Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

  4. Copper contamination in thin stainless steel sheet

    International Nuclear Information System (INIS)

    Holbert, R.K. Jr.; Dobbins, A.G.; Bennett, R.K. Jr.

    1986-01-01

    The standard welding technique used at Oak Ridge Y-12 Plant for joining thin stainless sheet is the gas tungsten arc (GTA) welding process. One of the reoccurring problems with the sheet welds is surface cracking in the heat-affected zone (HAZ). Metallography shows that the cracks are only about 0.05 mm (0.002 in.) deep which is significant in a 0.25 mm (0.01 in.) thick sheet. Thus, welding requirements do not permit any surfacing cracking as detected by a fluorescent dye penetrant test conducted on every part after welding. Surface cracks have been found in both of the two most common weld designs in the thin sheet fabricated at the Oak Ridge Y-12 Plant. These butt joints are welded between two 0.25 mm thick stainless steel sheets and a tube with eyelet welded to a 25 mm (0.98 in.) thick sheet. The weld between the two sheets is made on a semiautomatic seam welding unit, whereas the tube-to-eyelet-to-sheet welds are done manually. The quality of both welds is very dependent on the welding procedure and the way the parts are placed in the weld fixturing. Metallographic examination has indicated that some welded parts with surface cracking in the weld region had copper particles on the surface, and the question of copper contamination has been raised. With the aid of a scanning electron microscope and an electron microprobe, the existence of copper in an around the surface cracks has been verified. The copper is on the surface of the parts prior to welding in the form of small dust particles

  5. FDTD modeling of thin impedance sheets

    Science.gov (United States)

    Luebbers, Raymond J.; Kunz, Karl S.

    1991-01-01

    Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

  6. Thin Film Williamson Nanofluid Flow with Varying Viscosity and Thermal Conductivity on a Time-Dependent Stretching Sheet

    Directory of Open Access Journals (Sweden)

    Waris Khan

    2016-11-01

    Full Text Available This article describes the effect of thermal radiation on the thin film nanofluid flow of a Williamson fluid over an unsteady stretching surface with variable fluid properties. The basic governing equations of continuity, momentum, energy, and concentration are incorporated. The effect of thermal radiation and viscous dissipation terms are included in the energy equation. The energy and concentration fields are also coupled with the effect of Dufour and Soret. The transformations are used to reduce the unsteady equations of velocity, temperature and concentration in the set of nonlinear differential equations and these equations are tackled through the Homotopy Analysis Method (HAM. For the sake of comparison, numerical (ND-Solve Method solutions are also obtained. Special attention has been given to the variable fluid properties’ effects on the flow of a Williamson nanofluid. Finally, the effect of non-dimensional physical parameters like thermal conductivity, Schmidt number, Williamson parameter, Brinkman number, radiation parameter, and Prandtl number has been thoroughly demonstrated and discussed.

  7. Buckling and stretching of thin viscous sheets

    Science.gov (United States)

    O'Kiely, Doireann; Breward, Chris; Griffiths, Ian; Howell, Peter; Lange, Ulrich

    2016-11-01

    Thin glass sheets are used in smartphone, battery and semiconductor technology, and may be manufactured by producing a relatively thick glass slab and subsequently redrawing it to a required thickness. The resulting sheets commonly possess undesired centerline ripples and thick edges. We present a mathematical model in which a viscous sheet undergoes redraw in the direction of gravity, and show that, in a sufficiently strong gravitational field, buckling is driven by compression in a region near the bottom of the sheet, and limited by viscous resistance to stretching of the sheet. We use asymptotic analysis in the thin-sheet, low-Reynolds-number limit to determine the centerline profile and growth rate of such a viscous sheet.

  8. Thin sheet numerical modelling of continental collision

    NARCIS (Netherlands)

    Jimenez-Munt, I.; Garcia-Gastellanos, D.; Fernandez, M.

    2005-01-01

    We study the effects of incorporating surface mass transport and the gravitational potential energy of both crust and lithospheric mantle to the viscous thin sheet approach. Recent 2D (cross-section) numerical models show that surface erosion and sediment transport can play a major role in shaping

  9. Rapidly cast crystalline thin sheet materials

    International Nuclear Information System (INIS)

    Warlimont, H.; Emmerich, K.

    1986-01-01

    The current state and progress of casting thin sheet and ribbons directly from the melt are reviewed. First, the solidification phenomena pertinent to the process are outlined. Subsequently, Fe-Si,l Fe-Si-Al, Fe-Nd-B, Ag-Cu-Ti, alloy steels, Ni superalloys and Si are treated as examples. Finally, the information available on process development is critically assessed

  10. Flapping dynamics of a thin liquid sheet

    Science.gov (United States)

    Vadivukkarasan, M.; Kumaran, Dhivyaraja; Panchagnula, Mahesh; Multi-phase flow physics Group Team

    2017-11-01

    We attempt to delineate and describe the complete evolution of a thin soap film when air is blown through a nozzle in the normal direction. The sequence of events and its intrinsic dynamics are captured using high speed imaging. By careful observation, it was observed that multiple mechanisms occur in the same system and each event is triggered by an independent mechanism. The events include (a) flapping of a liquid sheet and pinching of the bubble, (b) onset of rupture on the liquid sheet, (c) formation of ligaments and (d) ejection of drops. From this study, it is shown that these events are predominantly governed by Kelvin-Helmholtz instability, Taylor - Culick law, Rayleigh-Taylor instability and capillary instability, respectively. The present experiments can be considered as an extension to the previous studies on soap films as well as thin flapping sheets which has direct relevance to coaxial atomizers used in aircraft applications.

  11. Nonlinear dynamics of thin current sheets

    International Nuclear Information System (INIS)

    Daughton, William

    2002-01-01

    Observations indicate that the current sheet in the Earth's geomagnetic tail may compress to a thickness comparable to an ion gyro-radius prior to substorm onset. In recent years, there has been considerable controversy regarding the kinetic stability of these thin structures. In particular, the growth rate of the kink instability and its relevance to magnetotail dynamics is still being debated. In this work, a series of fully kinetic particle-in-cell simulations are performed for a thin Harris sheet. The ion to electron mass ratio is varied between m i /m e =4→400 and careful comparisons are made with a formally exact approach to the linear Vlasov theory. At low mass ratio m i /m e <64, the simulations are in excellent agreement with the linear theory, but at high mass ratio the kink instability is observed to grow more rapidly in the kinetic simulations than predicted by theory. The resolution to this apparent discrepancy involves the lower hybrid instability which is active on the edge of the sheet and rapidly produces nonlinear modifications to the initial equilibrium. The nature of this nonlinear deformation is characterized and a simple model is proposed to explain the physics. After the growth and saturation of the lower hybrid fluctuations, the deformed current sheet is similar in structure to a Harris equilibrium with an additional background population. This may explain the large growth rate of the kink instability at later times, since this type of modification to the Harris sheet has been shown to greatly enhance the growth rate of the kink mode

  12. The crack growth resistance of thin steel sheets under eccentric ...

    Indian Academy of Sciences (India)

    Ľ AMBRIŠKO

    2018-03-10

    Mar 10, 2018 ... Abstract. The stable crack growth in thin steel sheets is the topic of this paper. The crack opening was observed using a videoextensometry system, allowing the crack extension determination. JR-curve and dR-curve were established from obtained data. The ductile tearing properties of different thin sheets ...

  13. LASER CUTTING MACHINES FOR 3-D THIN SHEET PARTS

    Directory of Open Access Journals (Sweden)

    Miroslav RADOVANOVIC

    2012-11-01

    Full Text Available Laser cutting machines are used for precise contour cutting thin sheet. In industrial application nowadays various types and construction of laser cutting machines can be met. For contour cutting 3-D thin sheet parts laser cutting machines with rotation movements and laser robots are used. Laser generates the light beam, that presents a tool in working process. Application of laser cutting machines made possible good quality of products, flexibility of production and enlargement of economy

  14. Forced tearing of ductile and brittle thin sheets.

    Science.gov (United States)

    Tallinen, T; Mahadevan, L

    2011-12-09

    Tearing a thin sheet by forcing a rigid object through it leads to complex crack morphologies; a single oscillatory crack arises when a tool is driven laterally through a brittle sheet, while two diverging cracks and a series of concertinalike folds forms when a tool is forced laterally through a ductile sheet. On the other hand, forcing an object perpendicularly through the sheet leads to radial petallike tears in both ductile and brittle materials. To understand these different regimes we use a combination of experiments, simulations, and simple theories. In particular, we describe the transition from brittle oscillatory tearing via a single crack to ductile concertina tearing with two tears by deriving laws that describe the crack paths and wavelength of the concertina folds and provide a simple phase diagram for the morphologies in terms of the material properties of the sheet and the relative size of the tool.

  15. Patterns through elastic instabilities, from thin sheets to twisted ribbons

    Science.gov (United States)

    Damman, Pascal

    Sheets embedded in a given shape by external forces store the exerted work in elastic deformations. For pure tensile forces, the work is stored as stretching energy. When the forces are compressive, several ways to store the exerted work, combining stretching and bending deformations can be explored. For large deflections, the ratio of bending, Eh3ζ2 /L4 and stretching, Ehζ4 /L4 energies, suggests that strain-free solutions should be favored for thin sheets, provided ζ2 >>h2 (where E , ζ , Land h are the elastic modulus, the deflection, a characteristic sheet size and its thickness). For uniaxially constrained sheets deriving from the Elastica, strain-free solutions are obvious, i.e., buckles, folds or wrinkles grow to absorb the stress of compression. In contrast, crumpled sheets exhibit ``origami-like'' solutions usually described as an assembly of flat polygonal facets delimitated by ridges focusing strains are observed. This type of solutions is particularly interesting since a faceted morphology is isometric to the undeformed sheet, except at those narrow ridges. In some cases however, the geometric constraints imposed by the external forces do not allow solutions with negligible strain in the deformed state. For instance, considering a circular sheet on a small drop, so thin that bending becomes negligible, i.e., Eh3 / γL2 geometry and a competition between various energy terms, involving stretching and bending modes.

  16. Fabrication and microwave shielding properties of free standing polyaniline-carbon fiber thin sheets

    International Nuclear Information System (INIS)

    Joon, Seema; Kumar, Rakesh; Singh, Avanish Pratap; Shukla, Rajni; Dhawan, S.K.

    2015-01-01

    Attempt has been made to synthesize polyaniline-carbon fiber (PANI-CF) composite via in-situ emulsion polymerization using β-naphthalene sulphonic acid (NSA) which acts as both surfactant as well as dopant. Free standing PANI-CF thin sheets are prepared which have electrical conductivity ∼1.02 S/cm with improved mechanical strength and thermal stability. The scanning electron microscopy is used to study the surface morphology of the composites. Structural characterization is done by using XRD. The dielectric attributes (ε* = ε′ − iε″) of PANI-CF sheets are calculated using experimental S parameters (S 11 , S 12 ) by Nicolson Ross Wier equations. It has been demonstrated that these sheets show maximum shielding effectiveness (SE) of 31.9 dB at 12.4 GHz frequency at a thickness of 1.5 mm. Free standing PANI-CF sheets so prepared have a potential for X-band microwave absorber application. - Highlights: • Free standing polyaniline-carbon fiber thin sheets fabricated for EMI shielding. • The mechanical strength of sheets improves with phenolic resin loading. • The dielectric parameters were calculated by Nicholson Ross Wier equations. • Sheets (1.5 mm thickness) demonstrate SE of 31.9 dB at 12.4 GHz frequency. • Sheets find potential application for X-band microwave absorption

  17. Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

    Science.gov (United States)

    Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

    2013-03-01

    A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

  18. Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

    International Nuclear Information System (INIS)

    Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

    2013-01-01

    A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

  19. Assisted crack tip flipping under Mode I thin sheet tearing

    DEFF Research Database (Denmark)

    Felter, Christian Lotz; Nielsen, Kim Lau

    2017-01-01

    Crack tip flipping, where the fracture surface alternates from side to side in roughly 45° shear bands, seems to be an overlooked propagation mode in Mode I thin sheet tearing. In fact, observations of crack tip flipping is rarely found in the literature. Unlike the already established modes...

  20. Stimulation of confocal unstable resonators using thin gain sheet

    International Nuclear Information System (INIS)

    Du Yanyi

    2000-01-01

    Mode calculation in unstable resonators with flowing saturable gain using the fast Fourier transform (FFT) algorithm and thin gain sheet just nearly inside the big mirror. This method is in resonators of small disturbance (ψ 0max = π/2), middle magnification (m 0 ∼= 1%)

  1. Greenland Ice Sheet: High-Elevation Balance and Peripheral Thinning.

    Science.gov (United States)

    Krabill; Abdalati; Frederick; Manizade; Martin; Sonntag; Swift; Thomas; Wright; Yungel

    2000-07-21

    Aircraft laser-altimeter surveys over northern Greenland in 1994 and 1999 have been coupled with previously reported data from southern Greenland to analyze the recent mass-balance of the Greenland Ice Sheet. Above 2000 meters elevation, the ice sheet is in balance on average but has some regions of local thickening or thinning. Thinning predominates at lower elevations, with rates exceeding 1 meter per year close to the coast. Interpolation of our results between flight lines indicates a net loss of about 51 cubic kilometers of ice per year from the entire ice sheet, sufficient to raise sea level by 0.13 millimeter per year-approximately 7% of the observed rise.

  2. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  3. Thin lead sheets in the decorative features in Pavia Charterhouse.

    Science.gov (United States)

    Colombo, Chiara; Realini, Marco; Sansonetti, Antonio; Rampazzi, Laura; Casadio, Francesca

    2006-01-01

    The facade of the church of the Pavia Charterhouse, built at the end of the 15th century, shows outstanding decorative features made of different stone materials, such as marbles, breccias and sandstones. Magnificent ornamental elements are made of thin lead sheets, and some marble slabs are inlaid with them. Metal elements are shaped in complex geometric and phytomorphic design, to form a Greek fret in black contrasting with the white Carrara marble. Lead pins were fixed to the back of the thin lead sheets with the aim of attaching the metal elements to the marble; in so doing the pins and the lead sheets constitute a single piece of metal. In some areas, lead elements have been lost, and they have been substituted with a black plaster, matching the colour of the metal. To the authors' knowledge, this kind of decorative technique is rare, and confirms the refinement of Renaissance Lombard architecture. This work reports on the results of an extensive survey of the white, orange and yellowish layers, which are present on the external surface of the lead. The thin lead sheets have been characterized and their state of conservation has been studied with the aid of Optical Microscopy, SEM-EDS, FTIR and Raman analyses. Lead sulphate, lead carbonates and oxides have been identified as decay products.

  4. Method and apparatus for determining weldability of thin sheet metal

    Science.gov (United States)

    Goodwin, Gene M.; Hudson, Joseph D.

    1988-01-01

    A fixture is provided for testing thin sheet metal specimens to evaluate hot-cracking sensitivity for determining metal weldability on a heat-to-heat basis or through varying welding parameters. A test specimen is stressed in a first direction with a load selectively adjustable over a wide range and then a weldment is passed along over the specimen in a direction transverse to the direction of strain to evaluate the hot-cracking characteristics of the sheet metal which are indicative of the weldability of the metal. The fixture provides evaluations of hot-cracking sensitivity for determining metal weldability in a highly reproducible manner with minimum human error.

  5. Prototypical model for tensional wrinkling in thin sheets

    KAUST Repository

    Davidovitch, B.; Schroll, R. D.; Vella, D.; Adda-Bedia, M.; Cerda, E. A.

    2011-01-01

    The buckling and wrinkling of thin films has recently seen a surge of interest among physicists, biologists, mathematicians, and engineers. This activity has been triggered by the growing interest in developing technologies at ever-decreasing scales and the resulting necessity to control the mechanics of tiny structures, as well as by the realization that morphogenetic processes, such as the tissue-shaping instabilities occurring in animal epithelia or plant leaves, often emerge from mechanical instabilities of cell sheets. Although the most basic buckling instability of uniaxially compressed plates was understood by Euler more than two centuries ago, recent experiments on nanometrically thin (ultrathin) films have shown significant deviations from predictions of standard buckling theory. Motivated by this puzzle, we introduce here a theoretical model that allows for a systematic analysis of wrinkling in sheets far from their instability threshold. We focus on the simplest extension of Euler buckling that exhibits wrinkles of finite length--a sheet under axisymmetric tensile loads. The first study of this geometry, which is attributed to Lamé, allows us to construct a phase diagram that demonstrates the dramatic variation of wrinkling patterns from near-threshold to far-from-threshold conditions. Theoretical arguments and comparison to experiments show that the thinner the sheet is, the smaller is the compressive load above which the far-from-threshold regime emerges. This observation emphasizes the relevance of our analysis for nanomechanics applications.

  6. Prototypical model for tensional wrinkling in thin sheets

    KAUST Repository

    Davidovitch, B.

    2011-10-31

    The buckling and wrinkling of thin films has recently seen a surge of interest among physicists, biologists, mathematicians, and engineers. This activity has been triggered by the growing interest in developing technologies at ever-decreasing scales and the resulting necessity to control the mechanics of tiny structures, as well as by the realization that morphogenetic processes, such as the tissue-shaping instabilities occurring in animal epithelia or plant leaves, often emerge from mechanical instabilities of cell sheets. Although the most basic buckling instability of uniaxially compressed plates was understood by Euler more than two centuries ago, recent experiments on nanometrically thin (ultrathin) films have shown significant deviations from predictions of standard buckling theory. Motivated by this puzzle, we introduce here a theoretical model that allows for a systematic analysis of wrinkling in sheets far from their instability threshold. We focus on the simplest extension of Euler buckling that exhibits wrinkles of finite length--a sheet under axisymmetric tensile loads. The first study of this geometry, which is attributed to Lamé, allows us to construct a phase diagram that demonstrates the dramatic variation of wrinkling patterns from near-threshold to far-from-threshold conditions. Theoretical arguments and comparison to experiments show that the thinner the sheet is, the smaller is the compressive load above which the far-from-threshold regime emerges. This observation emphasizes the relevance of our analysis for nanomechanics applications.

  7. Interaction of a charge with a thin plasma sheet

    International Nuclear Information System (INIS)

    Bordag, M.

    2007-01-01

    The interaction of the electromagnetic field with a two-dimensional plasma sheet intended to describe the pi-electrons of a carbon nanotube or a C 60 molecule is investigated. By first integrating out the displacement field of the plasma or the electromagnetic field, different representations for quantities like the Casimir energy are derived which are shown to be consistent with one another. Starting from the covariant gauge for the electromagnetic field, it is shown that the matching conditions to which the presence of the plasma sheet can be reduced are different from the commonly used ones. The difference in the treatments does not show up in the Casimir force between two parallel sheets, but it is present in the Casimir-Polder force between a charge or a neutral atom and a sheet. At once, since the plasma sheet is a regularization of the conductor boundary conditions, this sheds light on the difference in physics found earlier in the realization of conductor boundary conditions as 'thin' or 'thick' boundary conditions in Phys. Rev. D 70, 085010 (2004)

  8. Thermal conductivity model for nanoporous thin films

    Science.gov (United States)

    Huang, Congliang; Zhao, Xinpeng; Regner, Keith; Yang, Ronggui

    2018-03-01

    Nanoporous thin films have attracted great interest because of their extremely low thermal conductivity and potential applications in thin thermal insulators and thermoelectrics. Although there are some numerical and experimental studies about the thermal conductivity of nanoporous thin films, a simplified model is still needed to provide a straightforward prediction. In this paper, by including the phonon scattering lifetimes due to film thickness boundary scattering, nanopore scattering and the frequency-dependent intrinsic phonon-phonon scattering, a fitting-parameter-free model based on the kinetic theory of phonon transport is developed to predict both the in-plane and the cross-plane thermal conductivities of nanoporous thin films. With input parameters such as the lattice constants, thermal conductivity, and the group velocity of acoustic phonons of bulk silicon, our model shows a good agreement with available experimental and numerical results of nanoporous silicon thin films. It illustrates that the size effect of film thickness boundary scattering not only depends on the film thickness but also on the size of nanopores, and a larger nanopore leads to a stronger size effect of the film thickness. Our model also reveals that there are different optimal structures for getting the lowest in-plane and cross-plane thermal conductivities.

  9. Thermal conductivity of nanoscale thin nickel films

    Institute of Scientific and Technical Information of China (English)

    YUAN Shiping; JIANG Peixue

    2005-01-01

    The inhomogeneous non-equilibrium molecular dynamics (NEMD) scheme is applied to model phonon heat conduction in thin nickel films. The electronic contribution to the thermal conductivity of the film is deduced from the electrical conductivity through the use of the Wiedemann-Franz law. At the average temperature of T = 300 K, which is lower than the Debye temperature ()D = 450 K,the results show that in a film thickness range of about 1-11 nm, the calculated cross-plane thermal conductivity decreases almost linearly with the decreasing film thickness, exhibiting a remarkable reduction compared with the bulk value. The electrical and thermal conductivities are anisotropic in thin nickel films for the thickness under about 10 nm. The phonon mean free path is estimated and the size effect on the thermal conductivity is attributed to the reduction of the phonon mean free path according to the kinetic theory.

  10. Electrodynamic forces and plasma conductivity inside the current sheet

    International Nuclear Information System (INIS)

    Bogdanov, S.Yu.; Frank, A.G.; Markov, V.S.

    1985-01-01

    The process of accumulation and explosive release of magnetic energy was studied in a current sheet of plasma of a high-current linear discharge. The distribution of current density and of electrodynamic forces were measured and the time evolution of these quantities was determined. The evolution of the plasma conductivity was also obtained. The measured and calculated electrodynamic forces may explain the plasma acceleration up to the velocities about 3x10 4 m/s only near the sheet edges. (D.Gy.)

  11. A technology to improve formability for aluminum alloy thin-wall corrugated sheet component hydroforming

    Directory of Open Access Journals (Sweden)

    Lang Lihui

    2015-01-01

    Full Text Available The explosively forming projectile (EFP had been traditional adopted for the aluminum thin-walled corrugated sheet, whose deformation range is large but the formability is poor, and this process usually has problems of poor surface quality, long manufacturing cycle and high cost. The active hydroforming process was suggested to solve these issues during EFP. A new technology named as blank bulging by turning the upside down active hydroforming technology was proposed to overcome difficulties in non-uniform thickness distribution and cracking failure of corrugated sheet during the conventional hydroforming process. Both numerical simulations and experiments were conducted for this new technology. The result show that the deformation capacity of aluminum alloys can be improved effectively, and the more uniform distribution of wall thickness was obtained by this new method. It is conducted that the new method is universal for thin-walled, shallow drawing parts with complex section.

  12. Microwave conductance properties of aligned multiwall carbon nanotube textile sheets

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Brian L. [Univ. of Texas, Dallas, TX (United States); Martinez, Patricia [Univ. of Texas, Dallas, TX (United States); Zakhidov, Anvar A. [Univ. of Texas, Dallas, TX (United States); Shaner, Eric A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lee, Mark [Univ. of Texas, Dallas, TX (United States)

    2015-07-06

    Understanding the conductance properties of multi-walled carbon nanotube (MWNT) textile sheets in the microwave regime is essential for their potential use in high-speed and high-frequency applications. To expand current knowledge, complex high-frequency conductance measurements from 0.01 to 50 GHz and across temperatures from 4.2 K to 300 K and magnetic fields up to 2 T were made on textile sheets of highly aligned MWNTs with strand alignment oriented both parallel and perpendicular to the microwave electric field polarization. Sheets were drawn from 329 and 520 μm high MWNT forests that resulted in different DC resistance anisotropy. For all samples, the microwave conductance can be modeled approximately by a shunt capacitance in parallel with a frequency-independent conductance, but with no inductive contribution. Finally, this is consistent with diffusive Drude conduction as the primary transport mechanism up to 50 GHz. Further, it is found that the microwave conductance is essentially independent of both temperature and magnetic field.

  13. Process for forming thin film, heat treatment process of thin film sheet, and heat treatment apparatus therefor

    International Nuclear Information System (INIS)

    Watanabe, S.

    1984-01-01

    The invention provides a process for forming a magnetic thin film on a base film, a heat treatment process of a thin film sheet consisting of the base film and the magnetic thin film, and an apparatus for performing heat treatment of the thin film sheet. Tension applied to the thin film sheet is substantially equal to that applied to the base film when the magnetic thin film is formed thereon. Then, the thin film sheet is treated with heat. The thin film sheet is heated with a given temperature gradient to a reactive temperature at which heat shrinkage occurs, while the tension is being applied thereto. Thereafter, the thin film sheet to which the tension is still applied is cooled with substantially the same temperature gradient as applied in heating. The heat treatment apparatus has a film driving unit including a supply reel, a take-up reel, a drive source and guide rollers; a heating unit including heating plates, heater blocks and a temperature controller for heating the sheet to the reactive temperature; and a heat insulating unit including a thermostat and another temperature controller for maintaining the sheet at the nonreactive temperature which is slightly lower than the reactive temperature

  14. Reducing the cost of MWT module technology based on conductive back-sheet foils

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, I.J.; Goris, M.J.A.A.; Eerenstein, W. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands)

    2013-10-15

    MWT cell and module technology has shown to result in modules with a higher power output than H-pattern modules and to be suitable for use with thin and fragile cells. In this work, the use of low-cost module materials and their effect on module performance and reliability has been assessed. These materials include a conductive back-sheet patterned by milling with no silver plating at the contacts on the foil and no isolation coating on the copper and a low-silver content conductive adhesive. The sensitivity of module performance for the anti-corrosion coating on the copper of the conductive back-sheet is measured, as is the reliability in climate chamber testing of mini-modules made with these materials. The results show that these low cost materials can be used to manufacture module with good performance and reliability. Options are given for further cost reduction.

  15. Keyhole shapes during laser welding of thin metal sheets

    International Nuclear Information System (INIS)

    Aalderink, B J; Lange, D F de; Aarts, R G K M; Meijer, J

    2007-01-01

    Camera observations of the full penetration keyhole laser welding process show that the keyhole shape is elongated under certain welding conditions. Under these unfavourable circumstances, the welding process is susceptible to holes in the weld bead. Existing models of the pressure balance at the keyhole wall cannot explain this keyhole elongation. In this paper a new model is presented, accounting for the doubly curved shape of the keyhole wall. In this model, the surface tension pressure has one term that tends to close the keyhole and another term that tries to open it. Model calculations show that when the keyhole diameter is of the same order as the sheet thickness, the latter part can become dominant, causing the keyhole to elongate. Experiments on thin aluminium (AA5182) and mild steel (DC04) sheets verify these model calculations. As the keyhole radius depends on the radius of the focused laser spot, it was found for both materials that the ratio of the spot radius and the sheet thickness must be above a critical value to prevent keyhole elongation. These critical radii are 0.25 for AA5182 and 0.4 for DC04, respectively. Furthermore, differences in appearance of the weld bead between the circular and the elongated keyhole welds could be explained by this model

  16. Benchmark Testing of the Largest Titanium Aluminide Sheet Subelement Conducted

    Science.gov (United States)

    Bartolotta, Paul A.; Krause, David L.

    2000-01-01

    To evaluate wrought titanium aluminide (gamma TiAl) as a viable candidate material for the High-Speed Civil Transport (HSCT) exhaust nozzle, an international team led by the NASA Glenn Research Center at Lewis Field successfully fabricated and tested the largest gamma TiAl sheet structure ever manufactured. The gamma TiAl sheet structure, a 56-percent subscale divergent flap subelement, was fabricated for benchmark testing in three-point bending. Overall, the subelement was 84-cm (33-in.) long by 13-cm (5-in.) wide by 8-cm (3-in.) deep. Incorporated into the subelement were features that might be used in the fabrication of a full-scale divergent flap. These features include the use of: (1) gamma TiAl shear clips to join together sections of corrugations, (2) multiple gamma TiAl face sheets, (3) double hot-formed gamma TiAl corrugations, and (4) brazed joints. The structural integrity of the gamma TiAl sheet subelement was evaluated by conducting a room-temperature three-point static bend test.

  17. Thin current sheets observation by MMS during a near-Earth's magnetotail reconnection event

    Science.gov (United States)

    Nakamura, R.; Varsani, A.; Nakamura, T.; Genestreti, K.; Plaschke, F.; Baumjohann, W.; Nagai, T.; Burch, J.; Cohen, I. J.; Ergun, R.; Fuselier, S. A.; Giles, B. L.; Le Contel, O.; Lindqvist, P. A.; Magnes, W.; Schwartz, S. J.; Strangeway, R. J.; Torbert, R. B.

    2017-12-01

    During summer 2017, the four spacecraft of the Magnetospheric Multiscale (MMS) mission traversed the nightside magnetotail current sheet at an apogee of 25 RE. They detected a number of flow reversal events suggestive of the passage of the reconnection current sheet. Due to the mission's unprecedented high-time resolution and spatial separation well below the ion scales, structure of thin current sheets is well resolved both with plasma and field measurements. In this study we examine the detailed structure of thin current sheets during a flow reversal event from tailward flow to Earthward flow, when MMS crossed the center of the current sheet . We investigate the changes in the structure of the thin current sheet relative to the X-point based on multi-point analysis. We determine the motion and strength of the current sheet from curlometer calculations comparing these with currents obtained from the particle data. The observed structures of these current sheets are also compared with simulations.

  18. Functionalized graphene sheet-Poly(vinylidene fluoride) conductive nanocomposites

    KAUST Repository

    Ansari, Seema

    2009-05-01

    PVDF nanocomposites based on functionalized graphene sheets, FGS prepared from graphite oxide, and exfoliated graphite, EG, were prepared by solution processing and compression molding. FGS remains well dispersed in the PVDF composites as evidenced by the lack of the characteristic graphite reflection in the composites. Although the α-phase of PVDF is seen in the EG-based composites, a mixture of α- and β-phases is present in the FGS analogs. SEM and TEM imaging show smooth fractured surfaces with oriented platelets of graphite stacks and obvious debonding from the matrix in the EG-PVDF composites. In contrast, the FGS-PVDF composites show a wrinkled topography of relatively thin graphene sheets bonded well to the matrix. Storage modulus of the composites was increased with FGS and EG concentration. A lower percolation threshold (2 wt %) was obtained for FGSPVDF composites compared to EG-PVDF composites (above 5 wt %). Lastly, the FGS-PVDF composites show an unusual resistance/temperature behavior. The resistance decreases with temperature, indicating an NTC behavior, whereas EG-PVDF composites show a PTC behavior (e.g., the resistance increases with temperature). We attribute the NTC behavior of the FGS based composites to the higher aspect ratio of FGS which leads to contact resistance predominating over tunneling resistance. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 888-897, 2009.

  19. SU-F-T-550: Radiochromic Plastic Thin Sheet Dosimeter: Initial Performance

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, K [London Regional Cancer Program, London, ON (United Kingdom); Adamovics, J [John Adamovics, Skillman, NJ (United States)

    2016-06-15

    Purpose: Thin sheets, of a high sensitivity formulation of radiochromic dosimeter, Presage were prepared and evaluated for optical readout. Methods: Sheets of radiochromic polyurethane, 12 cm long, 10 cm wide and 0.2 cm thick were prepared with leuco crystal violet as the reporter molecule. Sample transmission was evaluated at a wavelength of 590 nm with in-house constructed instruments: optical cone beam laser CT scanner, fixed and scanning spot densitometers. Sample sequential irradiations to a total dose of 40 Gy were conducted with a modified, Theratron 60, cobalt radiotherapy machine at dose rates of 1 or 0.25 Gy per minute. Exposure to ambient and readout light was minimized to limit background photochromic signals. Samples were stored at 4°C. Optical activity was assessed from linearly polarized transmission images. Comparison sensitivity measurements with EBT3 film were conducted. Results: Samples were transparent, smooth and pale purple before irradiation. Radiochromic reaction was completed in less than 5 minutes. A linear dose response with a sensitivity of 0.5 cm-1Gy-1 was observed. Micrometer measurements found sheet thickness variations up to 20%. Uniform dose, 2 Gy attenuation images, correlated with local sheet thicknesses. Comparable measurements with EBT3 film were 3 times more sensitive at 1 Gy but above 15 Gy, EBT3 film had lower sensitivity than 0.2 cm thick Presage sheet dosimeter due to its non-linear response. Conclusion: Dose sensitivity provided a 10% decrease in transmission for a 1 Gy dose. Improvements in mold design are expected to allow production of sheets with less than 5% variation in thickness. Above, 10 Gy, Presage sheet dosimeter performance expected to exceed EBT3 film based on linearity, sensitivity, transparency and smoothness of samples. J Adamovics is owner of Heuris Inc.

  20. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  1. Sausage mode instability of thin current sheets as a cause of magnetospheric substorms

    Directory of Open Access Journals (Sweden)

    J. Büchner

    Full Text Available Observations have shown that, prior to substorm explosions, thin current sheets are formed in the plasma sheet of the Earth's magnetotail. This provokes the question, to what extent current-sheet thinning and substorm onsets are physically, maybe even causally, related. To answer this question, one has to understand the plasma stability of thin current sheets. Kinetic effects must be taken into account since particle scales are reached in the course of tail current-sheet thinning. We present the results of theoretical investigations of the stability of thin current sheets and about the most unstable mode of their decay. Our conclusions are based upon a non-local linear dispersion analysis of a cross-magnetic field instability of Harris-type current sheets. We found that a sausage-mode bulk current instability starts after a sheet has thinned down to the ion inertial length. We also present the results of three-dimensional electromagnetic PIC-code simulations carried out for mass ratios up to Mi / me=64. They verify the linearly predicted properties of the sausage mode decay of thin current sheets in the parameter range of interest.

    Key words. Magnetospheric physics (plasma waves and instabilities; storms and substorms · Space plasma physics (magnetic reconnection

  2. Fluctuation conductivity of thin superconductive vanadium films

    International Nuclear Information System (INIS)

    Dmitrenko, I.M.; Sidorenko, A.S.; Fogel, N.Y.

    1982-01-01

    Resistive transitions into the superconductive state are studied in thin [d >T/sub c/ the experimental data on the excess conductivity of the films agree qualitatively and quantitively with Aslamazov--Larkin theory. There is no Maki--Thompson contribution to fluctuation conductivity. Near T/sub c/ the excess conductivity sigma' changes exponentially with temperature in accordance with the predictions of the theory of the critical fluctuations of the order parameter. The values of the effective charge carrier mass defined from data on sigma' for the low fluctuation and critical fluctuation regions differ markedly. This difference is within the spread of effective masses for various charge carrier groups already known for vanadium. Causes of the difference in resistive behavior for the regions T >T/sub c/ are considered

  3. Photoinduced conductivity in tin dioxide thin films

    International Nuclear Information System (INIS)

    Muraoka, Y.; Takubo, N.; Hiroi, Z.

    2009-01-01

    The effects of ultraviolet light irradiation on the conducting properties of SnO 2-x thin films grown epitaxially on TiO 2 or Al 2 O 3 single-crystal substrates are studied at room temperature. A large increase in conductivity by two to four orders of magnitude is observed with light irradiation in an inert atmosphere and remains after the light is removed. The high-conducting state reverts to the original low-conducting state by exposing it to oxygen gas. These reversible phenomena are ascribed to the desorption and adsorption of negatively charged oxygen species at the grain boundaries, which critically change the mobility of electron carriers already present inside grains by changing the potential barrier height at the grain boundary. The UV light irradiation provides us with an easy and useful route to achieve a high-conducting state even at low carrier density in transparent conducting oxides and also to draw an invisible conducting wire or a specific pattern on an insulating film.

  4. Electric field dependence of excess electrical conductivity below transition temperature in thin superconducting lead films

    Energy Technology Data Exchange (ETDEWEB)

    Ashwini Kumar, P K; Duggal, V P [Delhi Univ. (India). Dept. of Physics and Astrophysics

    1976-01-26

    Results of measurements of the electric field dependence of the excess electrical conductivity are reported in thin superconducting lead films below the transition temperature. It is observed that the normal state sheet resistance has some effect on the nonlinearity but the theory of Yamaji still fits well to the experimental data.

  5. Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films

    Science.gov (United States)

    Hudaya, Chairul; Park, Ji Hun; Lee, Joong Kee

    2012-01-01

    An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

  6. Mutual Inductance Problem for a System Consisting of a Current Sheet and a Thin Metal Plate

    Science.gov (United States)

    Fulton, J. P.; Wincheski, B.; Nath, S.; Namkung, M.

    1993-01-01

    Rapid inspection of aircraft structures for flaws is of vital importance to the commercial and defense aircraft industry. In particular, inspecting thin aluminum structures for flaws is the focus of a large scale R&D effort in the nondestructive evaluation (NDE) community. Traditional eddy current methods used today are effective, but require long inspection times. New electromagnetic techniques which monitor the normal component of the magnetic field above a sample due to a sheet of current as the excitation, seem to be promising. This paper is an attempt to understand and analyze the magnetic field distribution due to a current sheet above an aluminum test sample. A simple theoretical model, coupled with a two dimensional finite element model (FEM) and experimental data will be presented in the next few sections. A current sheet above a conducting sample generates eddy currents in the material, while a sensor above the current sheet or in between the two plates monitors the normal component of the magnetic field. A rivet or a surface flaw near a rivet in an aircraft aluminum skin will disturb the magnetic field, which is imaged by the sensor. Initial results showed a strong dependence of the flaw induced normal magnetic field strength on the thickness and conductivity of the current-sheet that could not be accounted for by skin depth attenuation alone. It was believed that the eddy current imaging method explained the dependence of the thickness and conductivity of the flaw induced normal magnetic field. Further investigation, suggested the complexity associated with the mutual inductance of the system needed to be studied. The next section gives an analytical model to better understand the phenomenon.

  7. Compressive pre-stress effects on magnetostrictive behaviors of highly textured Galfenol and Alfenol thin sheets

    Directory of Open Access Journals (Sweden)

    Julia R. Downing

    2017-05-01

    Full Text Available Fe-Ga (Galfenol and Fe-Al (Alfenol are rare-earth-free magnetostrictive alloys with mechanical robustness and strong magnetoelastic coupling. Since highly textured Galfenol and Alfenol thin sheets along orientations have been developed with magnetostrictive performances of ∼270 ppm and ∼160 ppm, respectively, they have been of great interest in sensor and energy harvesting applications. In this work, we investigate stress-dependent magnetostrictive behaviors in highly textured rolled sheets of NbC-added Fe80Al20 and Fe81Ga19 alloys with a single (011 grain coverage of ∼90%. A compact fixture was designed and used to introduce a uniform compressive pre-stress to those thin sheet samples along a [100] direction. As compressive pre-stress was increased to above 100 MPa, the maximum observed magnetostriction increased 42% in parallel magnetostriction along the stress direction, λ//, in highly textured (011 Fe81Ga19 thin sheets for a compressive pre-stress of 60 MPa. The same phenomena were observed for (011 Fe80Al20 (maximum increase of 88% with a 49 MPa compressive stress. This trend is shown to be consistent with published results on the effect of pre-stress on magnetostriction in rods of single crystal and textured polycrystalline Fe-Ga alloy of similar compositions, and single crystal data gathered using our experimental set up. Interestingly, the saturating field (Hs does not vary with pre-stresses, while the saturating field in rod-shaped samples of Fe-Ga increases with an increase of pre-stress. This suggests that for a range of compressive pre-stresses, thin sheet samples have larger values of d33 transduction coefficients and susceptibility than rod-shaped samples of similar alloy compositions, and hence they should provide performance benefits when used in sensor and actuator device applications. Thus, we discuss potential reasons for the unexpected trends in Hs with pre-stress, and present preliminary results from tests conducted

  8. Optical conductivity of topological insulator thin films

    International Nuclear Information System (INIS)

    Li, L. L.; Xu, W.; Peeters, F. M.

    2015-01-01

    We present a detailed theoretical study on the optoelectronic properties of topological insulator thin film (TITFs). The k·p approach is employed to calculate the energy spectra and wave functions for both the bulk and surface states in the TITF. With these obtained results, the optical conductivities induced by different electronic transitions among the bulk and surface states are evaluated using the energy-balance equation derived from the Boltzmann equation. We find that for Bi 2 Se 3 -based TITFs, three characteristic regimes for the optical absorption can be observed. (i) In the low radiation frequency regime (photon energy ℏω<200 meV), the free-carrier absorption takes place due to intraband electronic transitions. An optical absorption window can be observed. (ii) In the intermediate radiation frequency regime (200<ℏω<300 meV), the optical absorption is induced mainly by interband electronic transitions from surface states in the valance band to surface states in the conduction band and an universal value σ 0 =e 2 /(8ℏ) for the optical conductivity can be obtained. (iii) In the high radiation frequency regime (ℏω>300 meV), the optical absorption can be achieved via interband electronic transitions from bulk and surface states in the valance band to bulk and surface states in the conduction band. A strong absorption peak can be observed. These interesting findings indicate that optical measurements can be applied to identify the energy regimes of bulk and surface states in the TITF

  9. PHYSICAL BASES OF SYSTEMS CREATION FOR MAGNETIC-IMPULSIVE ATTRACTION OF THIN-WALLED SHEET METALS

    Directory of Open Access Journals (Sweden)

    Y. Batygin

    2009-01-01

    Full Text Available The work is dedicated to the physical base of systems creating for the thin-walled sheet metals magnetic pulse attraction. Some practical realization models of the author’s suggestions are represented.

  10. Thin-Sheet Inversion Modeling of Geomagnetic Deep Sounding Data Using MCMC Algorithm

    Directory of Open Access Journals (Sweden)

    Hendra Grandis

    2013-01-01

    Full Text Available The geomagnetic deep sounding (GDS method is one of electromagnetic (EM methods in geophysics that allows the estimation of the subsurface electrical conductivity distribution. This paper presents the inversion modeling of GDS data employing Markov Chain Monte Carlo (MCMC algorithm to evaluate the marginal posterior probability of the model parameters. We used thin-sheet model to represent quasi-3D conductivity variations in the heterogeneous subsurface. The algorithm was applied to invert field GDS data from the zone covering an area that spans from eastern margin of the Bohemian Massif to the West Carpathians in Europe. Conductivity anomalies obtained from this study confirm the well-known large-scale tectonic setting of the area.

  11. Complete plasma dropouts at Vela satellites during thinning of the plasma sheet

    International Nuclear Information System (INIS)

    Lui, A.T.Y.; Hones, E.W. Jr.; Venkatesan, D.; Akasofu, S.; Bame, S.J.

    1975-01-01

    Five satellite years of Vela data are examined for plasma sheet thinnings. Complete proton disappearances (plasma dropouts) are the main subject here. During such times, the Vela satellite is temporarily in the high-latitude tail lobe. The distribution of such plasma dropouts within the magnetotail suggests that the semithickness of the plasma sheet near midnight seldom reaches less than 1 R/sub E/ during substorms and that the dawn and dusk portions of the plasma sheet remain thicker than the midnight portion. But it is also shown that the plasma sheet occasionally becomes very thin near the dusk magnetopause. No such severe thinnings of the plasma sheet are found near the dawn magnetopause. Plasma dropouts can occur regardless of the sign of the Z component of the IMF, but their frequency of occurrence seems to be greater when the Z component is negative.Three plasma dropouts which occurred in the midnight sector at unusually large distances from the estimated position of the neutral sheet were observed during geomagnetic storms. It is likely that the midnight sector of the plasma sheet can become very thick (approx.18 R/sub E/) at certain times during the main phase of storms. Detailed measurements in the plasma sheet were obtained near the beginning of a geomagnetic storm whose sc triggered a substorm. A compression of the plasma sheet at X/sub SM/approx. =-15 R/sub E/ occurred about 10 min after the sc onset at the earth and about 5 min after the start of plasma sheet thinning associated with the sc-related substorm. If compression-thinning of the plasma sheet initiated this substorm, the triggering action must have occurred earthward of X/sub SM/approx. =-15 R/sub E/

  12. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  13. Enhancement of absorption in vertically-oriented graphene sheets growing on a thin copper layer

    Energy Technology Data Exchange (ETDEWEB)

    Rozouvan, Tamara; Poperenko, Leonid [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine); Kravets, Vasyl, E-mail: vasyl_kravets@yahoo.com [School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL (United Kingdom); Shaykevich, Igor [Taras Shevchenko National University of Kyiv, Department of Physics 4, Prospect Glushkova, Kyiv, 03187 (Ukraine)

    2017-02-28

    Highlights: • The optical properties and surface structure of graphene films. • Chemical vapour deposition method. • Scanning tunneling microscopy revealed vertical crystal lattice structure of graphene layer. • We report a significant enhancement of the absorption band in the vertically-oriented graphene sheets. - Abstract: The optical properties and surface structure of graphene films grown on thin copper Cu (1 μm) layer using chemical vapour deposition method were investigated via spectroscopic ellipsometry and nanoscopic measurements. Angle variable ellipsometry measurements were performed to analyze the features of dispersion of the complex refractive index and optical conductivity. It was observed significant enhancement of the absorption band in the vertically-oriented graphene sheets layer with respect to the bulk graphite due to interaction between excited localized surface plasmon at surface of thin Cu layer and graphene’s electrons. Scanning tunneling microscopy measurements with atomic spatial resolution revealed vertical crystal lattice structure of the deposited graphene layer. The obtained results provide direct evidence of the strong influence of the growing condition and morphology of nanostructure on electronic and optical behaviours of graphene film.

  14. Functionalized graphene sheet-Poly(vinylidene fluoride) conductive nanocomposites

    KAUST Repository

    Ansari, Seema; Giannelis, Emmanuel P.

    2009-01-01

    PVDF nanocomposites based on functionalized graphene sheets, FGS prepared from graphite oxide, and exfoliated graphite, EG, were prepared by solution processing and compression molding. FGS remains well dispersed in the PVDF composites as evidenced

  15. Highly transparent and conductive thin films fabricated with nano-silver/double-walled carbon nanotube composites.

    Science.gov (United States)

    Lee, Shie-Heng; Teng, Chih-Chun; Ma, Chen-Chi M; Wang, Ikai

    2011-12-01

    This study develops a technique for enhancing the electrical conductivity and optical transmittance of transparent double-walled carbon nanotube (DWNT) film. Silver nanoparticles were modified with a NH(2)(CH(2))(2)SH self-assembled monolayer terminated by amino groups and subsequent surface condensation that reacted with functionalized DWNTs. Ag nanoparticles were grafted on the surface of the DWNTs. The low sheet resistance of the resulting thin conductive film on a polyethylene terephthalate (PET) substrate was due to the increased contact areas between DWNTs and work function by grafting Ag nanoparticles on the DWNT surfaces. Increasing the contact area between DWNTs and work function improved the conductivity of the DWNT-Ag thin films. The prepared DWNT-Ag thin films had a sheet resistance of 53.4 Ω/sq with 90.5% optical transmittance at a 550 nm wavelength. After treatment with HNO(3) and annealing at 150 °C for 30 min, a lower sheet resistance of 45.8 Ω/sq and a higher transmittance of 90.4% could be attained. The value of the DC conductivity to optical conductivity (σ(DC)/σ(OP)) ratio is 121.3. Copyright © 2011 Elsevier Inc. All rights reserved.

  16. Surface Morphology and Bending Deformation of 2024-T3 Thin Sheets with Laser Peen Forming

    Directory of Open Access Journals (Sweden)

    Wu Junfeng

    2018-01-01

    Full Text Available Laser peen forming (LPF is a pure mechanical forming method through accumulated plastic strain, which has been successfully applied in wing components. Experimental investigation has been performed to understand the effect of process parameters such as constraint conditions, sheet thickness and laser energy on surface morphology and bending deformation of 2024-T3 thin sheets of dimensions of 76 mm ×19 mm (length × width. The research results indicated that bulges on the aluminum foil were generated at the bottom surface and not generated at the topmost surface. It was different for transition value of two-way bending deformations of thin sheets after LPF with different constraint conditions. Remain flat thicknesses of thin sheets after LPF were about 1 mm ~ 2 mm for 20 J, 25 J and 30 J. Arc heights and curvatures of 3 mm thickness sheets increased with laser energy and those of 2 mm thickness sheets only made little change. It was found that convex deformation, flat, concave deformation and laser deep drawing for thin sheets with different thicknesses after LPF.

  17. Fabrication and properties of strip casting 4.5 wt% Si steel thin sheet

    Energy Technology Data Exchange (ETDEWEB)

    Zu, Guoqing, E-mail: gz854@uowmail.edu.au [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Zhang, Xiaoming [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhao, Jingwei [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Wang, Yuqian [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Yan, Yi [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia); Li, Chengang; Cao, Guangming [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Jiang, Zhengyi [School of Mechanical, Materials and Mechatronic Engineering, University of Wollongong, NSW 2522 (Australia)

    2017-02-15

    Three 4.5 wt% Si steel thin sheets with different thicknesses were efficiently fabricated by twin-roll strip casting, warm rolling and cold rolling followed by final annealing. A comprehensive investigation from the workability of the as-cast strip to the magnetic property of the produces was performed to illustrate the superiority of the new materials. The results show that the as-cast strip, which has a much lower Vickers hardness than that of the 6.5 wt% Si steel, is suitable for rolling processing. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies confirm that no ordering phase exists in the as-cast strip. The cold-rolled thin sheets exhibit good surface quality without edge cracks. Furthermore, all the three 4.5 wt% Si steel thin sheets possess relative strong <100>//ND texture and present high magnetic inductions and low iron losses after finial annealing. - Highlights: • 4.5 wt% Si as-cast sheet with excellent workability was produced by strip casting. • Three 4.5 wt% Si thin sheets were effectively fabricated by warm and cold rolling. • The microstructure and macro-texture of the thin sheets were elucidated. • High magnetic inductions and low iron losses were achieved simultaneously.

  18. Nonlinear equilibrium structure of thin currents sheets: influence of electron pressure anisotropy

    Directory of Open Access Journals (Sweden)

    L. M. Zelenyi

    2004-01-01

    Full Text Available Thin current sheets represent important and puzzling sites of magnetic energy storage and subsequent fast release. Such structures are observed in planetary magnetospheres, solar atmosphere and are expected to be widespread in nature. The thin current sheet structure resembles a collapsing MHD solution with a plane singularity. Being potential sites of effective energy accumulation, these structures have received a good deal of attention during the last decade, especially after the launch of the multiprobe CLUSTER mission which is capable of resolving their 3D features. Many theoretical models of thin current sheet dynamics, including the well-known current sheet bifurcation, have been developed recently. A self-consistent 1D analytical model of thin current sheets in which the tension of the magnetic field lines is balanced by the ion inertia rather than by the plasma pressure gradients was developed earlier. The influence of the anisotropic electron population and of the corresponding electrostatic field that acts to restore quasi-neutrality of the plasma is taken into account. It is assumed that the electron motion is fluid-like in the direction perpendicular to the magnetic field and fast enough to support quasi-equilibrium Boltzmann distribution along the field lines. Electrostatic effects lead to an interesting feature of the current density profile inside the current sheet, i.e. a narrow sharp peak of electron current in the very center of the sheet due to fast curvature drift of the particles in this region. The corresponding magnetic field profile becomes much steeper near the neutral plane although the total cross-tail current is in all cases dominated by the ion contribution. The dependence of electrostatic effects on the ion to electron temperature ratio, the curvature of the magnetic field lines, and the average electron magnetic moment is also analyzed. The implications of these effects on the fine structure of thin current sheets

  19. Conducting Layered Organic-inorganic Halides Containing -Oriented Perovskite Sheets.

    Science.gov (United States)

    Mitzi, D B; Wang, S; Feild, C A; Chess, C A; Guloy, A M

    1995-03-10

    Single crystals of the layered organic-inorganic perovskites, [NH(2)C(I=NH(2)](2)(CH(3)NH(3))m SnmI3m+2, were prepared by an aqueous solution growth technique. In contrast to the recently discovered family, (C(4)H(9)NH(3))(2)(CH(3)NH(3))n-1SnnI3n+1, which consists of (100)-terminated perovskite layers, structure determination reveals an unusual structural class with sets of m -oriented CH(3)NH(3)SnI(3) perovskite sheets separated by iodoformamidinium cations. Whereas the m = 2 compound is semiconducting with a band gap of 0.33 +/- 0.05 electron volt, increasing m leads to more metallic character. The ability to control perovskite sheet orientation through the choice of organic cation demonstrates the flexibility provided by organic-inorganic perovskites and adds an important handle for tailoring and understanding lower dimensional transport in layered perovskites.

  20. Experimental determination of spring back and thinning effect of aluminum sheet metal during L-bending operation

    International Nuclear Information System (INIS)

    Dilip Kumar, K.; Appukuttan, K.K.; Neelakantha, V.L.; Naik, Padmayya S.

    2014-01-01

    Highlights: • The spring back and thinning effect during L-bending was determined on aluminum sheet. • Beyond a particular clearance, the above said effects are linearly increasing. • Below the critical clearance scratches will occur on the surface due to wear. • As the clearance reduces, the wear rate increases on the punching surface. - Abstract: In automotive industry, significant efforts are being put forth to replace steel sheets with aluminum sheets for various applications. Besides its higher cost, there are several technical hurdles for wide usage of aluminum sheets in forming. Major problems in aluminum sheet metal forming operations are deformation errors and spring back effect. These problems are dependent on the number of parameters such as die and tool geometry, friction condition, loading condition and anisotropic properties of the metal. To predict the exact shape, the geometry based punch contact program must be used. The shape changes once the punch is withdrawn, because of the materials elasticity. Prediction of such a spring back effect is a major challenging problem in industry involving sheet metal forming operations. It also needs applying appropriate back tension during the forming complex shapes. Slight deformation of the metal leads to non-axisymmetric loading. One can predict the residual stress by determining plastic and elastic deformation. Thus appropriate spring back effect can be investigated. The present investigation was carried out to determine the spring back and thinning effect of aluminum sheet metal during L-bending operation. Number of specimens with thickness varying from 0.5 mm to 3.5 mm were prepared. The experiments were conducted for different clearances between punch and die. It is observed that, beyond a particular clearance for each thickness of the sheet metal, the spring back and thinning effects were linearly increasing. However, below the critical clearance, scratches on the surface of the sheet metal were

  1. Associations of geomagnetic activity with plasma sheet thinning and expansion: A statistical study

    International Nuclear Information System (INIS)

    Hones, E.W. Jr.; Pytte, T.; West, H.I. Jr.

    1984-01-01

    Associations of geomagnetic activity in the auroral zone with thinnings and expansions of the magnetotail plasma sheet are examined statistically in this paper. We first identified many plasma sheet thinnings and expansions in plasma and particle data from VELA satellites and from OGO 5 without reference to the ground magnetic data. These events were grouped according to the location of the detecting satellite in the magnetotail. For each such group the times of thinning or expansion were then used as fiducial times in a superposed-epoch analysis of the geomagnetic AL index values that were recorded in 8-hour intervals centered on the event times. The results show that many plasma sheet thinnings and expansions are related to discrete negative bay structures that are the classical signature of substorms. Furthermore, they support earlier findings that plasma sheet thinning and expansion at the VELA orbit (rroughly-equal18 R/sub E/) tend to be associated with the onset of the auroral zone negative bay and the beginning of its subsidence, respectively. Earthward of rroughly-equal13-15 R/sub E/, plasma sheet expansion occurs near the time of the onset of the negative bay, again in agreement with earlier findings. A large fraction of plasma sheet expansions to half thicknesses of > or approx. =6 R/sub E/ at the VELA orbit are associated not with a baylike geomagnetic disturbance but with subsidence of a prolonged interval of disturbance. The study also shows that many plasma sheet expansions are related simply to generally enhanced geomagnetic activity showing no baylike or other distinctive features

  2. The crack growth resistance of thin steel sheets under eccentric ...

    Indian Academy of Sciences (India)

    Ľ AMBRIŠKO

    2018-03-10

    Mar 10, 2018 ... of zinc-coated automotive steel sheets (IF – deep drawing interstitial free steel ..... to determine; therefore, the Ji was determined for observ- able crack initiation .... M R S, da Silva L F M and de Castro P M S T 2011. Analysis of ...

  3. Thin liquid sheet target capabilities for ultra-intense laser acceleration of ions at a kHz repetition rate

    Science.gov (United States)

    Klim, Adam; Morrison, J.; Orban, C.; Chowdhury, E.; Frische, K.; Feister, S.; Roquemore, M.

    2017-10-01

    The success of laser-accelerated ion experiments depends crucially on a number of factors including how thin the targets can be created. We present experimental results demonstrating extremely thin (under 200 nm) glycol sheet targets that can be used for ultra-intense laser-accelerated ion experiments conducted at the Air Force Research Laboratory at Wright-Patterson Air Force Base. Importantly, these experiments operate at a kHz repetition rate and the recovery time of the liquid targets is fast enough to allow the laser to interact with a refreshed, thin target on every shot. These thin targets can be used to produce energetic electrons, light ions, and neutrons as well as x-rays, we present results from liquid glycol targets which are useful for proton acceleration experiments via the mechanism of Target Normal Sheath Acceleration (TNSA). In future work, we will create thin sheets from deuterated water in order to perform laser-accelerated deuteron experiments. This research was sponsored by the Quantum and Non-Equilibrium Processes Division of the AFOSR, under the management of Dr. Enrique Parra, and support from the DOD HPCMP Internship Program.

  4. Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H, E-mail: Jamie.warner@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2011-05-13

    We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

  5. Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals

    International Nuclear Information System (INIS)

    Wu, Yimin A; Kirkland, Angus I; Schaeffel, Franziska; Porfyrakis, Kyriakos; Young, Neil P; Briggs, G Andrew D; Warner, Jamie H

    2011-01-01

    We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe nanocrystals directly onto the BN sheets and resolving the atomic structure from both the ZnSe nanocrystals and the BN support. Phase contrast images reveal moire patterns of interference between the beams diffracted by the nanocrystals and the BN substrate that are used to determine the relative orientation of the nanocrystals with respect to the BN sheets and interference lattice planes. Double diffraction is observed and has been analyzed.

  6. Impulse Hydroforming Method for Very Thin Sheets from Metallic or Hybrid Materials

    OpenAIRE

    Beerwald, C.; Beerwald, M.; Dirksen, U.; Henselek, A.

    2010-01-01

    Forming of very thin metallic and hybrid material foils is a demanding task in several application areas as for example in food or pharmaceutical packaging industries. Narrow forming limits of very thin sheet metals as well as minor process reliability due to necessary exact tool manufacturing (small punch-die clearance), both, causes abiding interest in new and innovative forming processes. In this contribution a new method using high pressure pulses will be introduced to form small geometry...

  7. Diffusion-induced bending of thin sheet couples : theory and experiments in Ti-Zr system

    NARCIS (Netherlands)

    Daruka, I.; Szabo, I.A.; Beke, D.L.; Cserhati, C.; Kodentsov, A.; Loo, van F.J.J.

    1996-01-01

    Numerical and analytical calculations of concentration and stress distributions of thin-sheet diffusion couples have been carried out as well as the time dependence of the Kirkendall shift, xk, and the curvature has also been determined. It is shown that the concentration distribution is not

  8. Double fillet lap of laser welding of thin sheet AZ31B Mg alloy

    Science.gov (United States)

    Ishak, Mahadzir; Salleh, M. N. M.

    2018-05-01

    In this paper, we describe the experimental laser welding of thin sheet AZ31B using double fillet lap joint method. Laser welding is capable of producing high quality weld seams especially for small weld bead on thin sheet product. In this experiment, both edges for upper and lower sheets were subjected to the laser beam from the pulse wave (PW) mode of fiber laser. Welded sample were tested their joint strength by tensile-shear strength method and the fracture loads were studied. Strength for all welded samples were investigated and the effect of laser parameters on the joint strength and appearances were studied. Pulsed energy (EP) from laser process give higher effect on joint strength compared to the welding speed (WS) and angle of irradiation (AOI). Highest joint strength was possessed by sample with high EP with the same value of WS and AOI. The strength was low due to the crack defect at the centre of weld region.

  9. Experimental Investigation into Suitable Process Conditions for Plastic Injection Molding of Thin-Sheet Parts

    Directory of Open Access Journals (Sweden)

    Dyi-Cheng Chen

    2014-04-01

    Full Text Available This study performs an experimental investigation into the effects of the process parameters on the surface quality of injection molded thin-sheet thermoplastic components. The investigations focus specifically on the shape, number and position of the mold gates, the injection pressure and the injection rate. It can be seen that the gravity force entering point improved filling of the cavity for the same forming time and injection pressure. Moreover, it shows the same injection pressure and packing time, the taper-shape gate yields a better surface appearance than the sheet-shape gate. The experimental results provide a useful source of reference in suitable the process conditions for the injection molding of thin-sheet plastic components.

  10. Electron Cooling and Isotropization during Magnetotail Current Sheet Thinning: Implications for Parallel Electric Fields

    Science.gov (United States)

    Lu, San; Artemyev, A. V.; Angelopoulos, V.

    2017-11-01

    Magnetotail current sheet thinning is a distinctive feature of substorm growth phase, during which magnetic energy is stored in the magnetospheric lobes. Investigation of charged particle dynamics in such thinning current sheets is believed to be important for understanding the substorm energy storage and the current sheet destabilization responsible for substorm expansion phase onset. We use Time History of Events and Macroscale Interactions during Substorms (THEMIS) B and C observations in 2008 and 2009 at 18 - 25 RE to show that during magnetotail current sheet thinning, the electron temperature decreases (cooling), and the parallel temperature decreases faster than the perpendicular temperature, leading to a decrease of the initially strong electron temperature anisotropy (isotropization). This isotropization cannot be explained by pure adiabatic cooling or by pitch angle scattering. We use test particle simulations to explore the mechanism responsible for the cooling and isotropization. We find that during the thinning, a fast decrease of a parallel electric field (directed toward the Earth) can speed up the electron parallel cooling, causing it to exceed the rate of perpendicular cooling, and thus lead to isotropization, consistent with observation. If the parallel electric field is too small or does not change fast enough, the electron parallel cooling is slower than the perpendicular cooling, so the parallel electron anisotropy grows, contrary to observation. The same isotropization can also be accomplished by an increasing parallel electric field directed toward the equatorial plane. Our study reveals the existence of a large-scale parallel electric field, which plays an important role in magnetotail particle dynamics during the current sheet thinning process.

  11. Anomalous resistivity due to kink modes in a thin current sheet

    International Nuclear Information System (INIS)

    Moritaka, Toseo; Horiuchi, Ritoku; Ohtani, Hiroaki

    2007-01-01

    The roles of microscopic plasma instabilities on the violation of the frozen-in constraint are investigated by examining the force balance equation based on explicit electromagnetic particle simulation for a thin current sheet. Wave-particle interactions associated with lower hybrid drift instability and drift kink instability (DKI) contribute to the wavy electric force term at the periphery of the current sheet and the wavy magnetic force term at the neutral sheet, respectively. In the linear growing phase of DKI, the wavy magnetic force term balances with the electric force term due to the dc electric field at the neutral sheet. It is concluded that the growth of DKI can create anomalous resistivity and result in the violation of the frozen-in constraint as well as the diffusion of current density

  12. Electromagnetic confinement and movement of thin sheets of molten metal

    Science.gov (United States)

    Lari, Robert J.; Praeg, Walter F.; Turner, Larry R.

    1990-01-01

    An apparatus capable of producing a combination of magnetic fields that can retain a metal in liquid form in a region having a smooth vertical boundary including a levitation magnet that produces low frequency magnetic field traveling waves to retain the metal and a stabilization magnet that produces a high frequency magnetic field to produce a smooth vertical boundary. As particularly adapted to the casting of solid metal sheets, a metal in liquid form can be continuously fed into one end of the confinement region produced by the levitation and stabilization magnets and removed in solid form from the other end of confinement region. An additional magnet may be included for support at the edges of the confinement region where eddy currents loop.

  13. Transparent conductive oxides for thin-film silicon solar cells

    NARCIS (Netherlands)

    Löffler, J.

    2005-01-01

    This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

  14. Opposed-Flow Flame Spread in a Narrow Channel Apparatus over Thin PMMA Sheets

    Science.gov (United States)

    Bornand, G. R.; Olson, Sandra L.; Miller, F. J.; Pepper, J. M.; Wichman, I. S.

    2013-01-01

    that at 1 atm pressure, the SDSU NCA successfully simulates microgravity for not only thin cellulose fuels, but also for thin PMMA sheets as well. This further supports the idea that the NCA is a viable option to complement or replace NASA's Test 1 for material flammability testing. Tests with thick fuels will be conducted in the future to further characterize the SDSU NCA.

  15. Confined disclinations: exterior versus material constraints in developable thin elastic sheets.

    Science.gov (United States)

    Efrati, Efi; Pocivavsek, Luka; Meza, Ruben; Lee, Ka Yee C; Witten, Thomas A

    2015-02-01

    We examine the shape change of a thin disk with an inserted wedge of material when it is pushed against a plane, using analytical, numerical, and experimental methods. Such sheets occur in packaging, surgery, and nanotechnology. We approximate the sheet as having vanishing strain, so that it takes a conical form in which straight generators converge to a disclination singularity. Then, its shape is that which minimizes elastic bending energy alone. Real sheets are expected to approach this limiting shape as their thickness approaches zero. The planar constraint forces a sector of the sheet to buckle into the third dimension. We find that the unbuckled sector is precisely semicircular, independent of the angle δ of the inserted wedge. We generalize the analysis to include conical as well as planar constraints and thereby establish a law of corresponding states for shallow cones of slope ε and thin wedges. In this regime, the single parameter δ/ε^{2} determines the shape. We discuss the singular limit in which the cone becomes a plane, and the unexpected slow convergence to the semicircular buckling observed in real sheets.

  16. Improvement of formability for fabricating thin continuously corrugated structures in sheet metal forming process

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Park, Sang Hu; Park, Seong Hun; Ha, Man Yeong; Jeong, Ho Seung; Cho, Jong Rae

    2012-01-01

    A stamping process is widely used for fabricating various sheet metal parts for vehicles, airplanes, and electronic devices by the merit of low processing cost and high productivity. Recently, the use of thin sheets with a corrugated structure for sheet metal parts has rapidly increased for use in energy management devices, such as heat exchangers, separators in fuel cells, and many others. However, it is not easy to make thin corrugated structures directly using a single step stamping process due to their geometrical complexity and very thin thickness. To solve this problem, a multi step stamping (MSS) process that includes a heat treatment process to improve formability is proposed in this work: the sequential process is the initial stamping, heat treatment, and final shaping. By the proposed method, we achieved successful results in fabricating thin corrugated structures with an average thickness of 75μm and increased formability of about 31% compared to the single step stamping process. Such structures can be used in a plate-type heat exchanger requiring low weight and a compact shape

  17. Microplasma light tiles: thin sheet lamps for general illumination

    Energy Technology Data Exchange (ETDEWEB)

    Eden, J G; Park, S-J [Laboratory for Optical Physics and Engineering, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801 (United States); Herring, C M; Bulson, J M [Eden Park Illumination, 903 North Country Fair Drive, Champaign, IL 61821 (United States)

    2011-06-08

    Flat, thin and lightweight lamps providing spatially uniform and dimmable illumination from active areas as large as 400 cm{sup 2} are being developed for general illumination and specialty applications. Comprising an array of low-temperature, nonequilibrium microplasmas driven by a dielectric barrier structure and operating at pressures of typically 400-700 Torr, these lamps have a packaged thickness <4 mm and yet produce luminance values beyond 26 000 cd m{sup -2} with a luminous efficacy approaching 30 lm W{sup -1}. Third generation lamps, presently in limited production, offer a correlated colour temperature in the 3000-4100 K interval and a colour rendering index of 80. Current lamps employ Xe{sub 2} ({lambda} {approx} 172 nm) as the primary emitter photoexciting a mixture of phosphors, and the pressure dependence of the wavelength-integrated fluorescence from the electronically excited dimer has been investigated with a vacuum ultraviolet spectrometer. In contrast to other promising lighting technologies, the decline in luminous efficacy of microplasma lamps with increasing power delivered to the lamp is small. For a 6 x 6 inch{sup 2} ({approx}225 cm{sup 2}) lamp, efficacy falls <16% when the radiant output (luminance) is raised from 2000 cd m{sup -2} to > 10 000 cd m{sup -2}.

  18. Modelling geomagnetically induced currents in midlatitude Central Europe using a thin-sheet approach

    Science.gov (United States)

    Bailey, Rachel L.; Halbedl, Thomas S.; Schattauer, Ingrid; Römer, Alexander; Achleitner, Georg; Beggan, Ciaran D.; Wesztergom, Viktor; Egli, Ramon; Leonhardt, Roman

    2017-06-01

    Geomagnetically induced currents (GICs) in power systems, which can lead to transformer damage over the short and the long term, are a result of space weather events and geomagnetic variations. For a long time, only high-latitude areas were considered to be at risk from these currents, but recent studies show that considerable GICs also appear in midlatitude and equatorial countries. In this paper, we present initial results from a GIC model using a thin-sheet approach with detailed surface and subsurface conductivity models to compute the induced geoelectric field. The results are compared to measurements of direct currents in a transformer neutral and show very good agreement for short-period variations such as geomagnetic storms. Long-period signals such as quiet-day diurnal variations are not represented accurately, and we examine the cause of this misfit. The modelling of GICs from regionally varying geoelectric fields is discussed and shown to be an important factor contributing to overall model accuracy. We demonstrate that the Austrian power grid is susceptible to large GICs in the range of tens of amperes, particularly from strong geomagnetic variations in the east-west direction.

  19. Holey nickel-cobalt layered double hydroxide thin sheets with ultrahigh areal capacitance

    Science.gov (United States)

    Zhi, Lei; Zhang, Wenliang; Dang, Liqin; Sun, Jie; Shi, Feng; Xu, Hua; Liu, Zonghuai; Lei, Zhibin

    2018-05-01

    Strong coupling of electroactive components on conductive carbonaceous matrix to fabricate flexible hybrid electrodes represents a promising approach towards high performance supercapacitors. This work reports the fabrication of holey nickel cobalt layered double hydroxide (NiCo-LDH) nanosheets that are vertically grown on the cotton cloth-derived activated textile carbon (aTC). The abundant nanoholes on the thin-sheet NiCo-LDH not only enhance the electrode efficiency for efficient Faradaic redox reactions but also facilitate access of electrolyte to the electrode surface, thus giving rise to 70% capacitance arising from their outer surface. As a result, the aTC-NiCo hybrid electrode is capable of simultaneously achieving extremely high areal capacitance (6.37 F cm-2), mass capacitance (525 F g-1) and volumetric capacitance (249 F cm-3) at a practical level of mass loading (6.72 mg cm-2). Moreover, a solid-state asymmetric capacitor built with aTC-NiCo as positive electrode and active carbon-coated on aTC as negative electrode can deliver a volumetric energy density of 7.4 mWh cm-3 at a power density of 103 mW cm-3, while preserving a superior power performance, satisfying cycling stability and good mechanical flexibility.

  20. Hydrogen bonding-assisted thermal conduction in β-sheet crystals of spider silk protein

    Science.gov (United States)

    Zhang, Lin; Chen, Teli; Ban, Heng; Liu, Ling

    2014-06-01

    Using atomistic simulations, we demonstrate that β-sheet, an essential component of spider silk protein, has a thermal conductivity 1-2 orders of magnitude higher than that of some other protein structures reported in the literature. In contrast to several other nanostructured materials of similar bundled/layered structures (e.g. few-layer graphene and bundled carbon nanotubes), the β-sheet is found to uniquely feature enhanced thermal conductivity with an increased number of constituting units, i.e. β-strands. Phonon analysis identifies inter-β-strand hydrogen bonding as the main contributor to the intriguing phenomenon, which prominently influences the state of phonons in both low- and high-frequency regimes. A thermal resistance model further verifies the critical role of hydrogen bonding in thermal conduction through β-sheet structures.Using atomistic simulations, we demonstrate that β-sheet, an essential component of spider silk protein, has a thermal conductivity 1-2 orders of magnitude higher than that of some other protein structures reported in the literature. In contrast to several other nanostructured materials of similar bundled/layered structures (e.g. few-layer graphene and bundled carbon nanotubes), the β-sheet is found to uniquely feature enhanced thermal conductivity with an increased number of constituting units, i.e. β-strands. Phonon analysis identifies inter-β-strand hydrogen bonding as the main contributor to the intriguing phenomenon, which prominently influences the state of phonons in both low- and high-frequency regimes. A thermal resistance model further verifies the critical role of hydrogen bonding in thermal conduction through β-sheet structures. Electronic supplementary information (ESI) available: Structure of the β-sheets, computational model, determination of area and temperature gradient, and additional phonon DOS results. See DOI: 10.1039/c4nr01195c

  1. Transparent conductive-polymer strain sensors for touch input sheets of flexible displays

    International Nuclear Information System (INIS)

    Takamatsu, Seiichi; Takahata, Tomoyuki; Muraki, Masato; Iwase, Eiji; Matsumoto, Kiyoshi; Shimoyama, Isao

    2010-01-01

    A transparent conductive polymer-based strain-sensor array, designed especially for touch input sheets of flexible displays, was developed. A transparent conductive polymer, namely poly(3, 4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), was utilized owing to its strength under repeated mechanical bending. PEDOT:PSS strain sensors with a thickness of 130 nm exhibited light transmittance of 92%, which is the same as the transmittance of ITO electrodes widely used in flat panel displays. We demonstrated that the sensor array on a flexible sheet was able to sustain mechanical bending 300 times at a bending radius of 5 mm. The strain sensor shows a gauge factor of 5.2. The touch point on a flexible sheet could be detected from histograms of the outputs of the strain sensors when the sheet was pushed with an input force of 5 N. The touch input could be detected on the flexible sheet with a curved surface (radius of curvature of 20 mm). These results show that the developed transparent conductive polymer-based strain-sensor array is applicable to touch input sheets of mechanically bendable displays.

  2. Thin-Sheet zinc-coated and carbon steels laser welding

    International Nuclear Information System (INIS)

    Pecas, P.; Gouveia, H.; Quintino, L.

    1998-01-01

    This paper describes the results of a research on CO 2 laser welding of thin-sheet carbon steels (Zinc-coated and uncoated), at several thicknesses combinations. Laser welding has an high potential to be applied on sub-assemblies welding before forming to the automotive industry-tailored blanks. The welding process is studied through the analysis of parameters optimization, metallurgical quality and induced distortions by the welding process. The clamping system and the gas protection system developed are fully described. These systems allow the minimization of common thin-sheet laser welding defects like misalignment, and zinc-coated laser welding defects like porous and zinc ventilation. The laser welding quality is accessed by DIN 8563 standard, and by tensile, microhardness and corrosion test. (Author) 8 refs

  3. A very thin light sheet technique used to investigate meniscus shapes by laser induced fluorescence

    International Nuclear Information System (INIS)

    Khan, M.A.

    2003-01-01

    In this paper a light sheet technique is described to accurately (50 μm) measure meniscus profiles in film formation problems. The use of a slit to create the thin (0.1 mm) laser sheet makes the technique easy to implement, and allows tunable sheet thickness. The low light intensity obtained through the slit is compensated by the induced fluorescence of the tested fluid, which provides good picture contrast. After video recording through a microscope, the actual meniscus is recovered by image processing and proper calibration. The efficiency of the technique is demonstrated on a coating flow experiment. Due to its good accuracy and ease of use, this technique is expected to provide useful quantitative information about meniscus problems, in particular for the validation of computational fluid dynamics CFD solutions of coating flows. (author)

  4. Variations in thermoelectric power of thin monocrystalline films with conductivity

    Science.gov (United States)

    Tellier, C. R.; Tosser, A. J.; Hafid, L.

    1980-12-01

    Starting from the bi-dimensional model for grain boundaries in monocrystalline thin films, the difference in thermoelectric power is expressed in terms of conductivity and energy dependence of the bulk electronic mean free path U. A new procedure is suggested for measuring U.

  5. Electrical Conductivity of CUXS Thin Film Deposited by Chemical ...

    African Journals Online (AJOL)

    Thin films of CuxS have successfully been deposited on glass substrates using the Chemical Bath Deposition (CBD) technique. The films were then investigated for their electrical properties. The results showed that the electrical conductivities of the CuxS films with different molarities (n) of thiourea (Tu), determined using ...

  6. Crystallite Size Effect on Thermal Conductive Properties of Nonwoven Nanocellulose Sheets.

    Science.gov (United States)

    Uetani, Kojiro; Okada, Takumi; Oyama, Hideko T

    2015-07-13

    The thermal conductive properties, including the thermal diffusivity and resultant thermal conductivity, of nonwoven nanocellulose sheets were investigated by separately measuring the thermal diffusivity of the sheets in the in-plane and thickness directions with a periodic heating method. The cross-sectional area (or width) of the cellulose crystallites was the main determinant of the thermal conductive properties. Thus, the results strongly indicate that there is a crystallite size effect on phonon conduction within the nanocellulose sheets. The results also indicated that there is a large interfacial thermal resistance between the nanocellulose surfaces. The phonon propagation velocity (i.e., the sound velocity) within the nanocellulose sheets was estimated to be ∼800 m/s based on the relationship between the thermal diffusivities and crystallite widths. The resulting in-plane thermal conductivity of the tunicate nanocellulose sheet was calculated to be ∼2.5 W/mK, markedly higher than other plastic films available for flexible electronic devices.

  7. Texture evolution in thin-sheets on AISI 301 metastable stainless steel under dynamic loading

    Energy Technology Data Exchange (ETDEWEB)

    Kim, K.Y. [Posco Steels, Pohan, South Korea (Korea, Republic of); Kozaczek, K. [Oak Ridge National Lab., TN (United States); Kulkarni, S.M. [TRW Vehicle Safety Systems, Mesa, AZ (United States); Bastias, P.C.; Hahn, G.T. [Vanderbilt Univ., Nashville, TN (United States)

    1995-05-08

    The evolution of texture in thin sheets of metastable austenitic stainless steel AISI 301 is affected by external conditions such as loading rate and temperature, by inhomogeneous deformation phenomena such as twinning and shear band formation, and by the concurent strain induced phase transformation of the retained austenitc ({gamma}) into martensite ({alpha}). The present paper describes texture measurements on different gauges of AISI 301 prior and after uniaxial stretching under different conditions.

  8. Diffusion-induced bending of thin sheet couples : theory and experiments in Ti-Zr system

    OpenAIRE

    Daruka, I.; Szabo, I.A.; Beke, D.L.; Cserhati, C.; Kodentsov, A.; Loo, van, F.J.J.

    1996-01-01

    Numerical and analytical calculations of concentration and stress distributions of thin-sheet diffusion couples have been carried out as well as the time dependence of the Kirkendall shift, xk, and the curvature has also been determined. It is shown that the concentration distribution is not sensitive to the boundary conditions (bent and planar, constrained, samples) and is influenced mainly by the feeding back effects of stresses (described by the stress term in the genealized diffusion pote...

  9. Thermal conductivity of bulk boron nitride nanotube sheets and their epoxy-impregnated composites

    International Nuclear Information System (INIS)

    Jakubinek, Michael B.; Kim, Keun Su; Simard, Benoit; Niven, John F.; Johnson, Michel B.; Ashrafi, Behnam; White, Mary Anne

    2016-01-01

    The thermal conductivity of bulk, self-supporting boron nitride nanotube (BNNT) sheets composed of nominally 100% BNNTs oriented randomly in-plane was measured by a steady-state, parallel thermal conductance method. The sheets were either collected directly during synthesis or produced by dispersion and filtration. Differences between the effective thermal conductivities of filtration-produced BNNT buckypaper (∝1.5 W m -1 K -1 ) and lower-density as-synthesized sheets (∝0.75 W m -1 K -1 ), which are both porous materials, were primarily due to their density. The measured results indicate similar thermal conductivity, in the range of 7-12 W m -1 K -1 , for the BNNT network in these sheets. High BNNT-content composites (∝30 wt.% BNNTs) produced by epoxy impregnation of the porous BNNT network gave 2-3 W m -1 K -1 , more than 10 x the baseline epoxy. The combination of manufacturability, thermal conductivity, and electrical insulation offers exciting potential for electrically insulating, thermally conductive coatings and packaging. Thermal conductivity of free-standing BNNT buckypaper, buckypaper composites, and related materials at room temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Thermal conductivity of bulk boron nitride nanotube sheets and their epoxy-impregnated composites

    Energy Technology Data Exchange (ETDEWEB)

    Jakubinek, Michael B.; Kim, Keun Su; Simard, Benoit [Security and Disruptive Technologies, Division of Emerging Technologies, National Research Council Canada, Ottawa, ON (Canada); Niven, John F. [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Johnson, Michel B. [Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Ashrafi, Behnam [Aerospace, Division of Engineering, National Research Council Canada, Montreal, QC (Canada); White, Mary Anne [Department of Physics and Atmospheric Science, Dalhousie University, Halifax, NS (Canada); Institute for Research in Materials, Dalhousie University, Halifax, NS (Canada); Department of Chemistry, Dalhousie University, Halifax, NS (Canada)

    2016-08-15

    The thermal conductivity of bulk, self-supporting boron nitride nanotube (BNNT) sheets composed of nominally 100% BNNTs oriented randomly in-plane was measured by a steady-state, parallel thermal conductance method. The sheets were either collected directly during synthesis or produced by dispersion and filtration. Differences between the effective thermal conductivities of filtration-produced BNNT buckypaper (∝1.5 W m{sup -1} K{sup -1}) and lower-density as-synthesized sheets (∝0.75 W m{sup -1} K{sup -1}), which are both porous materials, were primarily due to their density. The measured results indicate similar thermal conductivity, in the range of 7-12 W m{sup -1} K{sup -1}, for the BNNT network in these sheets. High BNNT-content composites (∝30 wt.% BNNTs) produced by epoxy impregnation of the porous BNNT network gave 2-3 W m{sup -1} K{sup -1}, more than 10 x the baseline epoxy. The combination of manufacturability, thermal conductivity, and electrical insulation offers exciting potential for electrically insulating, thermally conductive coatings and packaging. Thermal conductivity of free-standing BNNT buckypaper, buckypaper composites, and related materials at room temperature. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Thermal conductivity of a two-dimensional phosphorene sheet: a comparative study with graphene.

    Science.gov (United States)

    Hong, Yang; Zhang, Jingchao; Huang, Xiaopeng; Zeng, Xiao Cheng

    2015-11-28

    A recently discovered two-dimensional (2D) layered material phosphorene has attracted considerable interest as a promising p-type semiconducting material. In this work, thermal conductivity (κ) of monolayer phosphorene is calculated using large-scale classical non-equilibrium molecular dynamics (NEMD) simulations. The predicted thermal conductivities for infinite length armchair and zigzag phosphorene sheets are 63.6 and 110.7 W m(-1) K(-1) respectively. The strong anisotropic thermal transport is attributed to the distinct atomic structures at altered chiral directions and direction-dependent group velocities. Thermal conductivities of 2D graphene sheets with the same dimensions are also computed for comparison. The extrapolated κ of the 2D graphene sheet are 1008.5(+37.6)(-37.6) and 1086.9(+59.1)(-59.1) W m(-1) K(-1) in the armchair and zigzag directions, respectively, which are an order of magnitude higher than those of phosphorene. The overall and decomposed phonon density of states (PDOS) are calculated in both structures to elucidate their thermal conductivity differences. In comparison with graphene, the vibrational frequencies that can be excited in phosphorene are severely limited. The temperature effect on the thermal conductivity of phosphorene and graphene sheets is investigated, which reveals a monotonic decreasing trend for both structures.

  12. Elastic behavior and onset of cracking in cement composite plates reinforced by perforated thin steel sheets

    Science.gov (United States)

    Aronchik, V.

    1996-03-01

    Thin cement mortar plates reinforced by perforated thin steel sheets have been tested in four-point flexure loading. Six kinds of sheet reinforcement and to additional ones (for control) were used. Perforated sheets of the Daugavpils Factory of Machinery Chains differed by their thickness (0.6-1.8 mm), shape (round, rectangular, oval, "dumbbell"), and mark of steel (St. 08, 50, 70). Dimensions of plantes were 100×20×2 cm. Cements-sand mortar with a 1∶2 ratio of cement PZ35 and river sand of 3 mm grains was used as a matrix. Control specimens of similar dimensions and matrix were reinforced by wire cages and meshes (ferrocement). The testing was performed using an UMM-5 testing machine. Maximum deflection (at the midspan), tension, and shear strains were recorded. The expeimental data are presented in tables and graphs. The testing results showed that the elasticity modulus of material was in good agreement with the "admixture rule;" an onset of cracking for all types (excluding one) practically did not differ from reference samples; the mode of fracture in typical cases included an adhesion failure and significant shear strains. In one case the limit of the tension strength of the reinforcement was achieved.

  13. Buckling of thin viscous sheets with inhomogenous viscosity under extensional flows

    Science.gov (United States)

    Srinivasan, Siddarth; Wei, Zhiyan; Mahadevan, L.

    2016-11-01

    We investigate the dynamics, shape and stability of a thin viscous sheet subjected to an extensional flow under an imposed non-uniform temperature field. Using finite element simulations, we first solve for the stretching flow to determine the pre-buckling sheet thickness and in-plane flow velocities. Next, we use this solution as the base state and solve the linearized partial differential equation governing the out-of-plane deformation of the mid-surface as a function of two dimensionless operating parameters: the normalized stretching ratio α and a dimensionless width of the heating zone β. We show the sheet can become unstable via a buckling instability driven by the development of localized compressive stresses, and determine the global shape and growth rates of the most unstable mode. The growth rate is shown to exhibit a transition from stationary to oscillatory modes in region upstream of the heating zone. Finally, we investigate the effect of surface tension and present an operating diagram that indicates regions of the parameter space that minimizes or entirely suppresses the instability while achieving desired outlet sheet thickness. Therefore, our work is directly relevant to various industrial processes including the glass redraw & float-glass method.

  14. High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

    Science.gov (United States)

    Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

    2011-07-21

    Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

  15. Characterisation of organic thin film coatings on automobile steel sheets by photothermal methods

    Energy Technology Data Exchange (ETDEWEB)

    Orth, T. [Salzgitter Mannesmann Forschung GmbH, Duisburg (Germany); Fluegge, W. [Salzgitter Mannesmann Forschung GmbH, Salzgitter (Germany); Gibkes, J. [Ruhr-Univ. Bochum (Germany). AG FestKoerperSpektroskopie

    2006-07-01

    In the nineties, the first generation of organic thin film coatings for corrosion protection of zinc-coated thin sheet steel have been introduced. The coating typically consists of a suspension of small zinc particles, embedded in a polymer matrix. In the scope of quality control, the characterisation of the resulting layer structure is of great interest, comprising not only a constant layer thickness and a local homogeneity of the coating, but also the depth distribution of the particles within the layer. Especially the latter parameter does have a direct influence on the spot weldability of the steel sheets. The present work shows, how photothermal methods like modulated infrared radiometry and photoacoustics can be used for a successful depth profiling of the thin film coatings. The sample surface is periodically heated using an intensitymodulated laser beam, and a thermal wave is induced in the layer system. By variation of the modulation frequency of the laser beam, the thermal diffusion length and, as a consequence, the penetration depth of the thermal wave can be adjusted. By a suitable evaluation of the amplitude and phase lag signals as a function of the modulation frequency, accurate depth profiling has been realized which can be used for a very reliable prediction of the welding properties of the product. In the first investigations, artificial samples with well defined extreme distributions of the particles have been analyzed, and in a second step, an evaluation strategy has been developed for real production samples. (orig.)

  16. Ion-conductivity of thin film Li-Borate glasses

    International Nuclear Information System (INIS)

    Abouzari, M.R.S.

    2007-01-01

    In this thesis, the specific conductivity of ion-sputtered lithium borate thin films is studied. To this end, lithium borate glasses of the composition yLi 2 O.(1-y)B 2 O 3 with y=0.15, 0.20, 0.25, and 0.35 were produced as sputter targets. Films with thicknesses between 7 nm and 700 nm are deposited on silicon substrate between two AlLi electrodes. Conductivity spectra have been taken over a frequency range of 5 Hz to 2 MHz. The measurements were performed at different temperatures between 40 C and 350 C depending on the thickness and the composition of the films. The following results are derived by studying the conductivities of the films: i) The specific dc conductivity of layers with thicknesses larger than 150 nm is independent of their thicknesses; we call these layers 'thick films' and consider their conductivity as the 'base conductivity'. ii) The specific dc conductivity of layers with thicknesses smaller than 150 nm, called 'thin films', depends on the layer thickness. A nontrivial enhancement of the specific dc conductivity about three orders of magnitude for y=0.15, 0.2, and 0.25 is observed. iii) The base conductivity depends on y and at 120 C it varies between 4 x 10 -10 Ω -1 cm -1 and 2.5 x 10 -6 Ω -1 cm -1 when y varies between 0.15 and 0.35, whereas the maximum value of the specific dc conductivity of extremely thin films (with a thickness of some nanometre) seems to be independent of y and equals to the specific dc conductivity of layers with y= 0.35. Furthermore, we found in this work a physical interpretation of the so-called 'Constant Phase Element' (CPE) which is widely used in equivalent circuits for ionic conductors. This element describes correctly the depressed impedance semicircles observed in impedance spectroscopy. So far, this effect is sometimes attributed to the surface roughness. We have shown not only the invalidity of this approach, but we have also found that the depression arises from the nature of ionic motions. The model

  17. Ion-conductivity of thin film Li-Borate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Abouzari, M.R.S.

    2007-12-17

    In this thesis, the specific conductivity of ion-sputtered lithium borate thin films is studied. To this end, lithium borate glasses of the composition yLi{sub 2}O.(1-y)B{sub 2}O{sub 3} with y=0.15, 0.20, 0.25, and 0.35 were produced as sputter targets. Films with thicknesses between 7 nm and 700 nm are deposited on silicon substrate between two AlLi electrodes. Conductivity spectra have been taken over a frequency range of 5 Hz to 2 MHz. The measurements were performed at different temperatures between 40 C and 350 C depending on the thickness and the composition of the films. The following results are derived by studying the conductivities of the films: i) The specific dc conductivity of layers with thicknesses larger than 150 nm is independent of their thicknesses; we call these layers 'thick films' and consider their conductivity as the 'base conductivity'. ii) The specific dc conductivity of layers with thicknesses smaller than 150 nm, called 'thin films', depends on the layer thickness. A nontrivial enhancement of the specific dc conductivity about three orders of magnitude for y=0.15, 0.2, and 0.25 is observed. iii) The base conductivity depends on y and at 120 C it varies between 4 x 10{sup -10} {omega}{sup -1}cm{sup -1} and 2.5 x 10{sup -6} {omega}{sup -1}cm{sup -1} when y varies between 0.15 and 0.35, whereas the maximum value of the specific dc conductivity of extremely thin films (with a thickness of some nanometre) seems to be independent of y and equals to the specific dc conductivity of layers with y= 0.35. Furthermore, we found in this work a physical interpretation of the so-called 'Constant Phase Element' (CPE) which is widely used in equivalent circuits for ionic conductors. This element describes correctly the depressed impedance semicircles observed in impedance spectroscopy. So far, this effect is sometimes attributed to the surface roughness. We have shown not only the invalidity of this approach, but

  18. Improvement of the optoelectronic properties of tin oxide transparent conductive thin films through lanthanum doping

    Energy Technology Data Exchange (ETDEWEB)

    Mrabet, C., E-mail: chokri.mrabet@hotmail.com; Boukhachem, A.; Amlouk, M.; Manoubi, T.

    2016-05-05

    This work highlights some physical investigations on tin oxide thin films doped with different lanthanum content (ratio La–to-Sn = 0–3%). Such doped thin films have been successfully grown by spray pyrolysis onto glass substrates at 450 °C. X-ray diffraction (XRD) patterns showed that SnO{sub 2}:La thin films were polycrystalline with tetragonal crystal structure. The preferred orientation of crystallites for undoped SnO{sub 2} thin film was along (110) plane, whereas La-doped ones have rather preferential orientations along (200) direction. Although the grain size values exhibited a decreasing tendency with increasing doping content confirming the role of La as a grain growth inhibitor, dislocation density and microstrain values showed an increasing tendency. Also, Raman spectroscopy shows the bands corresponding to the tetragonal structure for the entire range of La doping. The same technique confirms the presence of La{sub 2}O{sub 3} as secondary phase. Moreover, SEM images showed a porous architecture with presence of big clusters with different sizes and shapes resulting from the agglomeration of small grains round shaped. Photoluminescence spectra of SnO{sub 2}:La thin films exhibit a decrease in the emission intensity with La concentration due to the decrease in grain size. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region. The dispersion of the refractive index is discussed using both Cauchy model and Wemple–Di-Domenico method. The optical band gap values vary slightly with La doping and were found to be around 3.8 eV. It has been found that La doping causes a pronounced decrease in the sheet resistance by up to two orders of magnitude and allows improving the Haacke's figure of merit (Φ) of the sprayed thin films. Moreover, we have introduced for a first time a new figure of merit for qualifying photo-thermal conversion applications. The obtained high conducting and transparent SnO{sub 2}:La

  19. Carbon nanotubes length optimization for preparation of improved transparent and conducting thin film substrates

    Directory of Open Access Journals (Sweden)

    Mansoor Farbod

    2017-03-01

    Full Text Available Transparent and conductive thin films of multiwalled carbon nanotubes (MWCNTs with different lengths were prepared on glass substrates by the spin coating method. In order to reduce the MWCNTs length, they were functionalized. The initial length of MWCNTs (10–15 μm was reduced to 1200, 205 and 168 nm after 30, 60 and 120 min refluxing time, respectively. After post annealing at 285 °C for 24 h, the electrical and optical properties were greatly improved for functionalized MWCNT thin films. They strongly depend on the length of CNTs. The optical transmittance of the film prepared using 30 min reflux CNTs was 2.6% and 6.6% higher than that of the 60 min and 120 min refluxed samples respectively. The sheet resistance of this film showed reductions of 45% and 80% as well. The film also exhibited the least roughness. The percolative figure of merit, which is proportional to the transparency and disproportional to the sheet resistance, was found to be higher for the sample with 30 min refluxed MWCNTs.

  20. Unzip instabilities: Straight to oscillatory transitions in the cutting of thin polymer sheets

    Science.gov (United States)

    Reis, P. M.; Kumar, A.; Shattuck, M. D.; Roman, B.

    2008-06-01

    We report an experimental investigation of the cutting of a thin brittle polymer sheet with a blunt tool. It was recently shown that the fracture path becomes oscillatory when the tool is much wider than the sheet thickness. Here we uncover two novel transitions from straight to oscillatory fracture by varying either the tilt angle of the tool or the speed of cutting, respectively. We denote these by angle and speed unzip instabilities and analyze them by quantifying both the dynamics of the crack tip and the final shapes of the fracture paths. Moreover, for the speed unzip instability, the straight crack lip obtained at low speeds exhibits out-of-plane buckling undulations (as opposed to being flat above the instability threshold) suggesting a transition from ductile to brittle fracture.

  1. Optical and electrical properties of transparent conductive ITO thin films under proton radiation with 100 keV

    International Nuclear Information System (INIS)

    Wei, Q.; He, S.Y.; Yang, D.Z.; Liu, J.C.

    2005-01-01

    Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2 x 10 16 cm -2 , the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment. (orig.)

  2. Thermal conductivity of multi-walled carbon nanotube sheets: radiation losses and quenching of phonon modes

    Energy Technology Data Exchange (ETDEWEB)

    Aliev, Ali E; Lima, Marcio H; Baughman, Ray H [Alan G MacDiarmid NanoTech Institute, University of Texas at Dallas, Richardson, TX 75083 (United States); Silverman, Edward M, E-mail: Ali.Aliev@utdallas.edu [Northrop Grumman Space Technology, Redondo Beach, CA 90278 (United States)

    2010-01-22

    The extremely high thermal conductivity of individual carbon nanotubes, predicted theoretically and observed experimentally, has not yet been achieved for large nanotube assemblies. Resistances at tube-tube interconnections and tube-electrode interfaces have been considered the main obstacles for effective electronic and heat transport. Here we show that, even for infinitely long and perfect nanotubes with well-designed tube-electrode interfaces, excessive radial heat radiation from nanotube surfaces and quenching of phonon modes in large bundles are additional processes that substantially reduce thermal transport along nanotubes. Equivalent circuit simulations and an experimental self-heating 3{omega} technique were used to determine the peculiarities of anisotropic heat flow and thermal conductivity of single MWNTs, bundled MWNTs and aligned, free-standing MWNT sheets. The thermal conductivity of individual MWNTs grown by chemical vapor deposition and normalized to the density of graphite is much lower ({kappa}{sub MWNT} = 600 {+-} 100 W m{sup -1} K{sup -1}) than theoretically predicted. Coupling within MWNT bundles decreases this thermal conductivity to 150 W m{sup -1} K{sup -1}. Further decrease of the effective thermal conductivity in MWNT sheets to 50 W m{sup -1} K{sup -1} comes from tube-tube interconnections and sheet imperfections like dangling fiber ends, loops and misalignment of nanotubes. Optimal structures for enhancing thermal conductivity are discussed.

  3. Highly conductive grain boundaries in copper oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deuermeier, Jonas, E-mail: j.deuermeier@campus.fct.unl.pt [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Wardenga, Hans F.; Morasch, Jan; Siol, Sebastian; Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Department of Materials and Earth Sciences, Technische Universität Darmstadt, Jovanka-Bontschits-Straße 2, D-64287 Darmstadt (Germany); Nandy, Suman; Calmeiro, Tomás; Martins, Rodrigo; Fortunato, Elvira [Department of Materials Science, Faculty of Science and Technology, i3N/CENIMAT, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal)

    2016-06-21

    High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu{sub 2}O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu{sub 2}O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu{sub 2}O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.

  4. Status of Joining Thin Sheet and Thin Wall Tubes of 14YWT

    Energy Technology Data Exchange (ETDEWEB)

    Hoelzer, David T. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Unocic, Kinga A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Tang, Wei [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Feng, Zhili [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-18

    Beginning this fiscal year, the FCRD research project initiated an investigation on joining thin sections of the advanced ODS 14YWT ferritic alloy. Friction stir welding (FSW) was investigated as a method to join thin plate and tubing of 14YWT since it is a solid state joining method that has been shown in past studies to be a promising method for joining plates of ODS alloys, such as 14YWT. However, this study will attempt to be the first to demonstrate if FSW can successfully join thin plates and thin wall tubing of 14YWT. In the first FSW attempt, a 1.06 cm thick plate of 14YWT (SM13 heat) was successfully rolled at 1000ºC to the target thickness of 0.1 cm with no edge cracking. This achievement is a highlight since previous attempts to roll 14YWT plates have resulted in extensive cracking. For the FSW run, a pin tool being developed by the ORNL FSW Process Development effort was used. The first FSW run successfully produced a bead-on-plate weld in the 0.1 cm thick plate. The quality of the weld zone appears very good with no evidence of large defects such as cavities. The microstructural characterization study of the bead-on-plate weld zone has been initiated to compare the results of the microstructure analysis with those obtained in the reference microstructural analysis of the 14YWT (SM13 heat) that showed ultra-fine grain size of 0.43 μm and a high number density of ~2-5 nm sizes oxygen-enriched nanoclusters.

  5. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W; Lippert, Thomas; Traversa, Enrico; Kilner, John A

    2015-01-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used

  6. Thin film photovoltaic devices with a minimally conductive buffer layer

    Science.gov (United States)

    Barnes, Teresa M.; Burst, James

    2016-11-15

    A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

  7. Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

    Energy Technology Data Exchange (ETDEWEB)

    Karpagaraj, A.; Siva shanmugam, N., E-mail: nsiva@nitt.edu; Sankaranarayanasamy, K.

    2015-07-29

    Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity.

  8. Some studies on mechanical properties and microstructural characterization of automated TIG welding of thin commercially pure titanium sheets

    International Nuclear Information System (INIS)

    Karpagaraj, A.; Siva shanmugam, N.; Sankaranarayanasamy, K.

    2015-01-01

    Gas Tungsten Arc Welding (GTAW) is a commonly used welding process for welding Titanium materials. Welding of titanium and its alloys poses several intricacies to the designer as they are prone to oxidation phenomenon. To overcome this contamination, a relatively new type of shielding arrangement is experimented. The proposed design and arrangement have been employed for joining commercially pure titanium sheets with variations in the GTAW process parameters namely the welding current and travel speed. Bead on plate (BoP) trials were conducted on thin sheets of 2 mm thickness by varying the process parameters. Subsequently, the macro structure images were captured. Based on these results, the process parameters are chosen for carrying out full penetration butt joints on 1.6 mm and 2 mm thick titanium sheets. The influences of these parameters of GTAW on the microstructure, mechanical properties and surface morphology at the fractured locations of the welded joints are examined. The microstructural properties of base metal, heat affected zone and fusion zone are analyzed through optical microscopy. The welded joints showed an ultimate tensile strength of about 383 MPa with 15.7% elongation. The hardness value at fusion zone and base metal are typically observed to be 191 and 153 HV-0.5, respectively. X-ray diffraction study is conducted to examine the chemical composition in the parent metal and fusion zone of the weld. Fractured surface is examined using Scanning Electron Microscopy which revealed dimple kind of rupture present at the fractured surfaces owing to insufficient or excessive heat with slight impurities that prevents the accomplishment of stronger micro-level weld integrity

  9. Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets.

    Science.gov (United States)

    Gabriel, Tobias; Rommel, Daniel; Scherm, Florian; Gorywoda, Marek; Glatzel, Uwe

    2017-03-10

    Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co-28Cr-9W-1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE) study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM) and scanning electron microscopy (SEM), combined with electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDX). Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable.

  10. Laser Cladding of Ultra-Thin Nickel-Based Superalloy Sheets

    Directory of Open Access Journals (Sweden)

    Tobias Gabriel

    2017-03-01

    Full Text Available Laser cladding is a well-established process to apply coatings on metals. However, on substrates considerably thinner than 1 mm it is only rarely described in the literature. In this work 200 µm thin sheets of nickel-based superalloy 718 are coated with a powder of a cobalt-based alloy, Co–28Cr–9W–1.5Si, by laser cladding. The process window is very narrow, therefore, a precisely controlled Yb fiber laser was used. To minimize the input of energy into the substrate, lines were deposited by setting single overlapping points. In a design of experiments (DoE study, the process parameters of laser power, laser spot area, step size, exposure time, and solidification time were varied and optimized by examining the clad width, weld penetration, and alloying depth. The microstructure of the samples was investigated by optical microscope (OM and scanning electron microscopy (SEM, combined with electron backscatter diffraction (EBSD and energy dispersive X-ray spectroscopy (EDX. Similarly to laser cladding of thicker substrates, the laser power shows the highest influence on the resulting clad. With a higher laser power, the clad width and alloying depth increase, and with a larger laser spot area the weld penetration decreases. If the process parameters are controlled precisely, laser cladding of such thin sheets is manageable.

  11. Near-earth Thin Current Sheets and Birkeland Currents during Substorm Growth Phase

    International Nuclear Information System (INIS)

    Sorin Zaharia; Cheng, C.Z.

    2003-01-01

    Two important phenomena observed during the magnetospheric substorm growth phase are modeled: the formation of a near-Earth (|X| ∼ 9 R E ) thin cross-tail current sheet, as well as the equatorward shift of the ionospheric Birkeland currents. Our study is performed by solving the 3-D force-balance equation with realistic boundary conditions and pressure distributions. The results show a cross-tail current sheet with large current (J φ ∼ 10 nA/m 2 ) and very high plasma β (β ∼ 40) between 7 and 10 R E . The obtained region-1 and region-2 Birkeland currents, formed on closed field lines due to pressure gradients, move equatorward and become more intense (J parallel max ∼ 3 (micro)A/m 2 ) compared to quiet times. Both results are in agreement with substorm growth phase observations. Our results also predict that the cross-tail current sheet maps into the ionosphere in the transition region between the region-1 and region-2 currents

  12. Magnetic anisotropy and anisotropic ballistic conductance of thin magnetic wires

    International Nuclear Information System (INIS)

    Sabirianov, R.

    2006-01-01

    The magnetocrystalline anisotropy of thin magnetic wires of iron and cobalt is quite different from the bulk phases. The spin moment of monatomic Fe wire may be as high as 3.4 μ B , while the orbital moment as high as 0.5 μ B . The magnetocrystalline anisotropy energy (MAE) was calculated for wires up to 0.6 nm in diameter starting from monatomic wire and adding consecutive shells for thicker wires. I observe that Fe wires exhibit the change sign with the stress applied along the wire. It means that easy axis may change from the direction along the wire to perpendicular to the wire. We find that ballistic conductance of the wire depends on the direction of the applied magnetic field, i.e. shows anisotropic ballistic magnetoresistance. This effect occurs due to the symmetry dependence of the splitting of degenerate bands in the applied field which changes the number of bands crossing the Fermi level. We find that the ballistic conductance changes with applied stress. Even for thicker wires the ballistic conductance changes by factor 2 on moderate tensile stain in our 5x4 model wire. Thus, the ballistic conductance of magnetic wires changes in the applied field due to the magnetostriction. This effect can be observed as large anisotropic BMR in the experiment

  13. Using Microporous Polytetrafluoroethylene Thin Sheets as a Flexible Solar Diffuser to Minimize Sunlight Glint to Cameras in Space

    Science.gov (United States)

    Choi, Michael K.

    2016-01-01

    An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

  14. Using microporous polytetrafluoroethylene thin sheets as a flexible solar diffuser to minimize sunlight glint to cameras in space

    Science.gov (United States)

    Choi, Michael K.

    2016-09-01

    An innovative design of using microporous PTFE thin sheets as a solar diffuser for MLI blankets or mechanical structure has been developed. It minimizes sunlight or stray-light glint to cameras when it is incident on these components in space. A microporous black PTFE thin sheet solar diffuser has been qualified for flight at NASA GSFC and installed to the TAGSAM arm MLI, OCAMS PolyCam sunshade MLI and SamCam motor riser MLI in the NASA OSIRIS-REx mission to meet the SamCam camera BRDF requirement.

  15. Stamping of Thin-Walled Structural Components with Magnesium Alloy AZ31 Sheets

    International Nuclear Information System (INIS)

    Chen, F.-K.; Chang, C.-K.

    2005-01-01

    In the present study, the stamping process for manufacturing cell phone cases with magnesium alloy AZ31 sheets was studied using both the experimental approach and the finite element analysis. In order to determine the proper forming temperature and set up a fracture criterion, tensile tests and forming limit tests were first conducted to obtain the mechanical behaviors of AZ31 sheets at various elevated temperatures. The mechanical properties of Z31 sheets obtained from the experiments were then adopted in the finite element analysis to investigate the effects of the process parameters on the formability of the stamping process of cell phone cases. The finite element simulation results revealed that both the fracture and wrinkle defects could not be eliminated at the same time by adjusting blank-holder force or blank size. A drawbead design was then performed using the finite element simulations to determine the size and the location of drawbead required to suppress the wrinkle defect. An optimum stamping process, including die geometry, forming temperature, and blank dimension, was then determined for manufacturing the cell phone cases. The finite element analysis was validated by the good agreement between the simulation results and the experimental data. It confirms that the cell phone cases can be produced with magnesium alloy AZ31 sheet by the stamping process at elevated temperatures

  16. Mechanical characterization of auxetic stainless steel thin sheets with reentrant structure

    Science.gov (United States)

    Lekesiz, H.; Bhullar, S. K.; Karaca, A. A.; Jun, M. B. G.

    2017-08-01

    Smart materials in auxetic form present a great potential for various medical applications due to their unique deformation mechanisms along with durable infrastructure. Both analytical and finite element (FE) models are extensively used in literature to characterize mechanical response of auxetic structures but these structures are mostly thick enough to be considered as bulk material and 3D inherently. Auxetic plates in very thin form, a.e. foil, may bring numerous advantages such as very light design and better biodegradability when needed. However, there is a gap in literature on mechanical characterization of auxetic thin plates. In this study, structural analysis of very thin auxetic plates under uniaxial loading is investigated using both FE method and experimental method. 25 μm thick stainless steel (316L) plates are fabricated with reentrant texture for three different unit cell dimensions and tested under uniaxial loading using universal testing machine. 25 and 50 μm thick sheets with same cell dimensions were analyzed using implicit transient FE model including strain hardening and failure behaviors. FE results cover all the deformation schemes seen in actual tests and total deformation level matches with test results. Effect of plate thickness and cell geometry on auxetic behavior is discussed in detail using FE results. Finally, based on FE analysis results, an optimum geometry for prolonged auxetic behavior, high flexibility and high durability is suggested for future potential applications.

  17. Hydrogenated amorphous silicon thin film anode for proton conducting batteries

    Science.gov (United States)

    Meng, Tiejun; Young, Kwo; Beglau, David; Yan, Shuli; Zeng, Peng; Cheng, Mark Ming-Cheng

    2016-01-01

    Hydrogenated amorphous Si (a-Si:H) thin films deposited by chemical vapor deposition were used as anode in a non-conventional nickel metal hydride battery using a proton-conducting ionic liquid based non-aqueous electrolyte instead of alkaline solution for the first time, which showed a high specific discharge capacity of 1418 mAh g-1 for the 38th cycle and retained 707 mAh g-1 after 500 cycles. A maximum discharge capacity of 3635 mAh g-1 was obtained at a lower discharge rate, 510 mA g-1. This electrochemical discharge capacity is equivalent to about 3.8 hydrogen atoms stored in each silicon atom. Cyclic voltammogram showed an improved stability 300 mV below the hydrogen evolution potential. Both Raman spectroscopy and Fourier transform infrared spectroscopy studies showed no difference to the pre-existing covalent Si-H bond after electrochemical cycling and charging, indicating a non-covalent nature of the Si-H bonding contributing to the reversible hydrogen storage of the current material. Another a-Si:H thin film was prepared by an rf-sputtering deposition followed by an ex-situ hydrogenation, which showed a discharge capacity of 2377 mAh g-1.

  18. Scanning thin-sheet laser imaging microscopy (sTSLIM) with structured illumination and HiLo background rejection.

    Science.gov (United States)

    Schröter, Tobias J; Johnson, Shane B; John, Kerstin; Santi, Peter A

    2012-01-01

    We report replacement of one side of a static illumination, dual sided, thin-sheet laser imaging microscope (TSLIM) with an intensity modulated laser scanner in order to implement structured illumination (SI) and HiLo image demodulation techniques for background rejection. The new system is equipped with one static and one scanned light-sheet and is called a scanning thin-sheet laser imaging microscope (sTSLIM). It is an optimized version of a light-sheet fluorescent microscope that is designed to image large specimens (HiLo image demodulation. The static light-sheet has a thickness of 3.2 µm; whereas, the scanned side has a light-sheet thickness of 4.2 µm. The scanned side images specimens with subcellular resolution (HiLo produce superior contrast compared to both the uniform static and scanned light-sheets. HiLo contrast was greater than SI and is faster and more robust than SI because as it produces images in two-thirds of the time and exhibits fewer intensity streaking artifacts. 2011 Optical Society of America

  19. Conductance Thin Film Model of Flexible Organic Thin Film Device using COMSOL Multiphysics

    Science.gov (United States)

    Carradero-Santiago, Carolyn; Vedrine-Pauléus, Josee

    We developed a virtual model to analyze the electrical conductivity of multilayered thin films placed above a graphene conducting and flexible polyethylene terephthalate (PET) substrate. The organic layers of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a hole conducting layer, poly(3-hexylthiophene-2,5-diyl) (P3HT), as a p-type, phenyl-C61-butyric acid methyl ester (PCBM) and as n-type, with aluminum as a top conductor. COMSOL Multiphysics was the software we used to develop the virtual model to analyze potential variations and conductivity through the thin-film layers. COMSOL Multiphysics software allows simulation and modeling of physical phenomena represented by differential equations such as heat transfer, fluid flow, electromagnetism, and structural mechanics. In this work, using the AC/DC, electric currents module we defined the geometry of the model and properties for each of the six layers: PET/graphene/PEDOT:PSS/P3HT/PCBM/aluminum. We analyzed the model with varying thicknesses of graphene and active layers (P3HT/PCBM). This simulation allowed us to analyze the electrical conductivity, and visualize the model with varying voltage potential, or bias across the plates, useful for applications in solar cell devices.

  20. High mobility transparent conducting oxides for thin film solar cells

    International Nuclear Information System (INIS)

    Calnan, S.; Tiwari, A.N.

    2010-01-01

    A special class of transparent conducting oxides (TCO) with high mobility of > 65 cm 2 V -1 s -1 allows film resistivity in the low 10 -4 Ω cm range and a high transparency of > 80% over a wide spectrum, from 300 nm to beyond 1500 nm. This exceptional coincidence of desirable optical and electrical properties provides opportunities to improve the performance of opto-electronic devices and opens possibilities for new applications. Strategies to attain high mobility (HM) TCO materials as well as the current status of such materials based on indium and cadmium containing oxides are presented. Various concepts used to understand the underlying mechanisms for high mobility in HMTCO films are discussed. Examples of HMTCO layers used as transparent electrodes in thin film solar cells are used to illustrate possible improvements in solar cell performance. Finally, challenges and prospects for further development of HMTCO materials are discussed.

  1. Towards crack-free ablation cutting of thin glass sheets with picosecond pulsed lasers

    Science.gov (United States)

    Sun, Mingying; Eppelt, Urs; Hartmann, Claudia; Schulz, Wolfgang; Zhu, Jianqiang; Lin, Zunqi

    2017-08-01

    We investigated the morphology and mechanism of laser-induced damage in the ablation cutting of thin glass sheets with picosecond laser. Two kinds of damage morphologies observed on the cross-section of the cut channel, are caused by high-density free-electrons and the temperature accumulation, respectively. Notches and micro-cracks can be observed on the top surface of the sample near the cut edge. The surface micro-cracks were related to high energy free-electrons and also the heat-affected zone. Heat-affected-zone and visible-cracks free conditions of glass cutting were achieved by controlling the repetition rate and spatial overlap of laser pulses.

  2. Research on Liquid Forming Process of Nickel Superalloys Thin Sheet Metals

    Directory of Open Access Journals (Sweden)

    Hyrcza-Michalska M.

    2017-12-01

    Full Text Available The paper presents the study of drawability of thin sheet metals made of a nickel superalloy Inconel type. The manufacturing process of axisymmetric cup – cone and a closed section profile in the form of a circular tube were designed and analyzed. In both cases, working fluid-oil was used in place of the rigid tools. The process of forming liquid is currently the only alternative method for obtaining complex shapes, coatings, and especially if we do it with high-strength materials. In the case of nickel superalloys the search for efficient methods to manufacture of the shaped shell is one of the most considerable problems in aircraft industry [1-5]. However, the automotive industries have the same problem with so-called advanced high-strength steels (AHSS. Due to this, both industrial problems have been examined and the emphasis have been put on the process of liquid forming (hydroforming. The study includes physical tests and the corresponding numerical simulations performed, using the software Eta/Dynaform 5.9. Numerical analysis of the qualitative and quantitative forecasting enables the formability of materials with complex and unusual characteristics of the mechanical properties and forming technology. It has been found that only the computer aided design based on physical and numerical modeling, makes efficient plastic processing possible using a method of hydroforming. Drawability evaluation based on the determination of the mechanical properties of complex characteristics is an indispensable element of this design in the best practice of industrial manufacturing products made of thin sheet metals.

  3. Preparation of a thin polysulfone phosphor sheet for the detection of alpha particles using adhesive process

    International Nuclear Information System (INIS)

    Seo, B. K.; Woo, Z. H.; Kim, G. H.; Chang, U. S.; Oh, W. Z.; Lee, K. W.; Han, M. J.

    2005-01-01

    According to atomic energy law and connection regs, the surface contamination of nuclear facilities should be monitored routinely. Surface contamination is divided into removable and fixed contamination. Fixed contamination is measured by a direct method with a survey meter. And removable contamination is measured by an indirect method using smear paper and a low background proportional counter. Also, in the decommissioning process of a nuclear research facilities, such as Korean Research Reactor 1 and 2 and Uranium Conversion Plant, a significant amount of nuclear wastes is produced. The wastes contaminated must be surveyed for the disposal and reuse in the future. In the previous study the medium, scintillatorembedded polymer membrane for detecting the alpharay, was prepared by impregnating organic scintillators in a membrane structure. The plastic scintillator consists of polysulfone(PSF) as a matrix with PPO as an organic scintillator and POPOP as a wave shifting agent dissolved in the matrix. But, an organic plastic scintillator was inadequate to detect the alpha particle in the alpha-beta mixing field because its light output is smaller than beta ray one. So, a thin phosphor sheet was prepared, which consisted of a very uniform deposit of silver activated zinc sulfide (ZnS(Ag)) phosphor applied to on side of clear polysulfone plastic sheet

  4. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  5. Material Behavior Based Hybrid Process for Sheet Draw-Forging Thin Walled Magnesium Alloys

    International Nuclear Information System (INIS)

    Sheng, Z.Q.; Shivpuri, R.

    2005-01-01

    Magnesium alloys are conventionally formed at the elevated temperatures. The thermally improved formability is sensitive to the temperature and strain rate. Due to limitations in forming speeds, tooling strength and narrow processing windows, complex thin walled parts cannot be made by traditional warm drawing or hot forging processes. A hybrid process, which is based on the deformation mechanism of magnesium alloys at the elevated temperature, is proposed that combines warm drawing and hot forging modes to produce an aggressive geometry at acceptable forming speed. The process parameters, such as temperatures, forming speeds etc. are determined by the FEM modeling and simulation. Sensitivity analysis under the constraint of forming limits of Mg alloy sheet material and strength of tooling material is carried out. The proposed approach is demonstrated on a conical geometry with thin walls and with bottom features. Results show that designed geometry can be formed in about 8 seconds, this cannot be formed by conventional forging while around 1000s is required for warm drawing. This process is being further investigated through controlled experiments

  6. High-strength high-conductivity Cu-Nb microcomposite sheet fabricated via multiple roll bonding

    International Nuclear Information System (INIS)

    Jha, S.C.; Delagi, R.G.; Forster, J.A.; Krotz, P.D.

    1993-01-01

    Copper-niobium microcomposites are a new class of high-strength high-conductivity materials that have attractive properties for room- and elevated-temperature applications. Since Nb has little solid solubility in Cu, addition of Nb to Cu does not affect its conductivity. Copper-niobium microcomposites are melted and cast so that the microstructure of cast Cu-Nb ingots consists of 1- to 10 μm Nb dendrites uniformly distributed within the copper matrix. Extensive wire drawing with a true processing strain (η> 12) of Cu-Nb alloy leads to refinement and elongation of Nb dendrites into 1- to 10 nm-thick filaments. The presence of such fine Nb filaments causes a significant increase in the strength of Cu-Nb wires. The tensile strength of heavily drawn Cu-Nb wires was determined to be significantly higher than the values predicted by the rule of mixtures. This article reports the fabrication of high-strength Cu-Nb microcomposite sheet by multiple roll bonding. It is difficult and impractical to attain high processing strains (η>3) by simple cold rolling. In most practical cold-rolling operation, the thickness reduction does not exceed 90 pct (η ≅2). Therefore, innovative processing is required to generate high strength in Cu-Nb microcomposite sheet. Multiple roll bonding of Cu-Nb has been utilized to store high processing strain ( η>10) in the material and refine the Nb particle size within the copper matrix. This article describes the microstructure, mechanical properties, and thermal stability of roll-bonded Cu-Nb microcomposite sheet

  7. Controlled bending and folding of a bilayer structure consisting of a thin stiff film and a heat shrinkable polymer sheet

    Science.gov (United States)

    Cui, Jianxun; Adams, John G. M.; Zhu, Yong

    2018-05-01

    Bending pre-designed flat sheets into three-dimensional (3D) structures is attracting much interest, as it provides a simple approach to make 3D devices. Here we report controlled bending and folding of a bilayer structure consisting of a heat shrinkable polymer sheet and a thin stiff film (not thermally responsive). Upon heating, the prestrained polymer sheet shrinks, leading to bending or folding of the bilayer. We studied the effect of relative dimensions of the two layers on the bending behavior and demonstrated the transition from longitudinal bending to transverse bending of the bilayer strip. Transverse bending was utilized to fold origami structures, including several flat letters, a crane, and a corrugated metal sheet via Miura-ori folding. We developed a method to further control the bending orientation based on bio-inspired anisotropic bending stiffness. By bending the metal foil in different orientations, several structures were obtained, including cylindrical surfaces and left-handed/right-handed helical structures.

  8. Natively textured surface hydrogenated gallium-doped zinc oxide transparent conductive thin films with buffer layers for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com; Wang, Fei; Geng, Xin-hua; Huang, Qian; Zhao, Ying; Zhang, Xiao-dan

    2013-09-02

    Natively textured surface hydrogenated gallium-doped zinc oxide (HGZO) thin films have been deposited via magnetron sputtering on glass substrates. These natively textured HGZO thin films exhibit rough pyramid-like textured surface, high optical transmittances in the visible and near infrared region and excellent electrical properties. The experiment results indicate that tungsten-doped indium oxide (In{sub 2}O{sub 3}:W, IWO) buffer layers can effectively improve the surface roughness and enhance the light scattering ability of HGZO thin films. The root-mean-square roughness of HGZO, IWO (10 nm)/HGZO and IWO (30 nm)/HGZO thin films are 28, 44 and 47 nm, respectively. The haze values at the wavelength of 550 nm increase from 7.0% of HGZO thin film without buffer layer to 18.37% of IWO (10 nm)/HGZO thin film. The optimized IWO (10 nm)/HGZO exhibits a high optical transmittance of 82.18% in the visible and near infrared region (λ ∼ 400–1100 nm) and excellent electrical properties with a relatively low sheet resistance of 3.6 Ω/□ and the resistivity of 6.21 × 10{sup −4} Ωcm. - Highlights: • Textured hydrogenated gallium-doped zinc oxide (HGZO) films were developed. • Tungsten-doped indium oxide (IWO) buffer layers were applied for the HGZO films. • Light-scattering ability of the HGZO films can be improved through buffer layers. • Low sheet resistance and high haze were obtained for the IWO(10 nm)/HGZO film. • The IWO/HGZO films are promising transparent conductive layers for solar cells.

  9. The Conductive Silver Nanowires Fabricated by Two-beam Laser Direct Writing on the Flexible Sheet

    Science.gov (United States)

    He, Gui-Cang; Zheng, Mei-Ling; Dong, Xian-Zi; Jin, Feng; Liu, Jie; Duan, Xuan-Ming; Zhao, Zhen-Sheng

    2017-02-01

    Flexible electrically conductive nanowires are now a key component in the fields of flexible devices. The achievement of metal nanowire with good flexibility, conductivity, compact and smooth morphology is recognized as one critical milestone for the flexible devices. In this study, a two-beam laser direct writing system is designed to fabricate AgNW on PET sheet. The minimum width of the AgNW fabricated by this method is 187 ± 34 nm with the height of 84 ± 4 nm. We have investigated the electrical resistance under different voltages and the applicable voltage per meter range is determined to be less than 7.5 × 103 V/m for the fabricated AgNW. The flexibility of the AgNW is very excellent, since the resistance only increases 6.63% even after the stretched bending of 2000 times at such a small bending radius of 1.0 mm. The proposed two-beam laser direct writing is an efficient method to fabricate AgNW on the flexible sheet, which could be applied in flexible micro/nano devices.

  10. Thin inclusion approach for modelling of heterogeneous conducting materials

    Science.gov (United States)

    Lavrov, Nikolay; Smirnova, Alevtina; Gorgun, Haluk; Sammes, Nigel

    Experimental data show that heterogeneous nanostructure of solid oxide and polymer electrolyte fuel cells could be approximated as an infinite set of fiber-like or penny-shaped inclusions in a continuous medium. Inclusions can be arranged in a cluster mode and regular or random order. In the newly proposed theoretical model of nanostructured material, the most attention is paid to the small aspect ratio of structural elements as well as to some model problems of electrostatics. The proposed integral equation for electric potential caused by the charge distributed over the single circular or elliptic cylindrical conductor of finite length, as a single unit of a nanostructured material, has been asymptotically simplified for the small aspect ratio and solved numerically. The result demonstrates that surface density changes slightly in the middle part of the thin domain and has boundary layers localized near the edges. It is anticipated, that contribution of boundary layer solution to the surface density is significant and cannot be governed by classic equation for smooth linear charge. The role of the cross-section shape is also investigated. Proposed approach is sufficiently simple, robust and allows extension to either regular or irregular system of various inclusions. This approach can be used for the development of the system of conducting inclusions, which are commonly present in nanostructured materials used for solid oxide and polymer electrolyte fuel cell (PEMFC) materials.

  11. High-capacity conductive nanocellulose paper sheets for electrochemically controlled extraction of DNA oligomers.

    Directory of Open Access Journals (Sweden)

    Aamir Razaq

    Full Text Available Highly porous polypyrrole (PPy-nanocellulose paper sheets have been evaluated as inexpensive and disposable electrochemically controlled three-dimensional solid phase extraction materials. The composites, which had a total anion exchange capacity of about 1.1 mol kg(-1, were used for extraction and subsequent release of negatively charged fluorophore tagged DNA oligomers via galvanostatic oxidation and reduction of a 30-50 nm conformal PPy layer on the cellulose substrate. The ion exchange capacity, which was, at least, two orders of magnitude higher than those previously reached in electrochemically controlled extraction, originated from the high surface area (i.e. 80 m(2 g(-1 of the porous composites and the thin PPy layer which ensured excellent access to the ion exchange material. This enabled the extractions to be carried out faster and with better control of the PPy charge than with previously employed approaches. Experiments in equimolar mixtures of (dT(6, (dT(20, and (dT(40 DNA oligomers showed that all oligomers could be extracted, and that the smallest oligomer was preferentially released with an efficiency of up to 40% during the reduction of the PPy layer. These results indicate that the present material is very promising for the development of inexpensive and efficient electrochemically controlled ion-exchange membranes for batch-wise extraction of biomolecules.

  12. Thin-sheet zinc-coated and carbon steels laser welding

    Directory of Open Access Journals (Sweden)

    Peças, P.

    1998-04-01

    Full Text Available This paper describes the results of a research on CO2 laser welding of thin-sheet carbon steels (zinccoated and uncoated, at several thicknesses combinations. Laser welding has an high potential to be applied on sub-assemblies welding before forming to the automotive industry-tailored blanks. The welding process is studied through the analysis of parameters optimization, metallurgical quality and induced distortions by the welding process. The clamping system and the gas protection system developed are fully described. These systems allow the minimization of common thin-sheet laser welding defects like misalignement, and zinc-coated laser welding defects like porous and zinc volatilization. The laser welding quality is accessed by DIN 8563 standard, and by tensile, microhardness and corrosion tests.

    Este artigo descreve os resultados da investigação da soldadura laser de CO2 de chapa fina de acó carbono (simples e galvanizado, em diferentes combinações de espessura. A soldadura laser é um processo de elevado potencial no fabrico de tailored-blanks (sub-conjuntos para posterior enformação, constituidos por varias partes de diferentes materiais e espessuras para a indústria automóvel. São analisados os aspectos de optimização paramétrica, de qualidade metalúrgica da junta soldada e das deformações resultantes da soldadura. São descritos os mecanismos desenvolvidos de fixação das chapas e protecção gasosa, por forma a minimizar os defeitos típicos na soldadura laser de chapa fina como o desalinhamento e da soldadura laser de chapa galvanizada como os poros e a volatilização do zinco. Por fim apresentam-se resultados da avaliação da qualidade da soldadura do ponto de vista qualitativo através da norma DIN 8563, e do pontos de vista quantitativo através de ensaios de tracção, dureza e corrosão.

  13. Preparation of Graphene Sheets by Electrochemical Exfoliation of Graphite in Confined Space and Their Application in Transparent Conductive Films.

    Science.gov (United States)

    Wang, Hui; Wei, Can; Zhu, Kaiyi; Zhang, Yu; Gong, Chunhong; Guo, Jianhui; Zhang, Jiwei; Yu, Laigui; Zhang, Jingwei

    2017-10-04

    A novel electrochemical exfoliation mode was established to prepare graphene sheets efficiently with potential applications in transparent conductive films. The graphite electrode was coated with paraffin to keep the electrochemical exfoliation in confined space in the presence of concentrated sodium hydroxide as the electrolyte, yielding ∼100% low-defect (the D band to G band intensity ratio, I D /I G = 0.26) graphene sheets. Furthermore, ozone was first detected with ozone test strips, and the effect of ozone on the exfoliation of graphite foil and the microstructure of the as-prepared graphene sheets was investigated. Findings indicate that upon applying a low voltage (3 V) on the graphite foil partially coated with paraffin wax that the coating can prevent the insufficiently intercalated graphite sheets from prematurely peeling off from the graphite electrode thereby affording few-layer (graphene sheets in a yield of as much as 60%. Besides, the ozone generated during the electrochemical exfoliation process plays a crucial role in the exfoliation of graphite, and the amount of defect in the as-prepared graphene sheets is dependent on electrolytic potential and electrode distance. Moreover, the graphene-based transparent conductive films prepared by simple modified vacuum filtration exhibit an excellent transparency and a low sheet resistance after being treated with NH 4 NO 3 and annealing (∼1.21 kΩ/□ at ∼72.4% transmittance).

  14. Sodium chloride crystallization from thin liquid sheets, thick layers, and sessile drops in microgravity

    Science.gov (United States)

    Fontana, Pietro; Pettit, Donald; Cristoforetti, Samantha

    2015-10-01

    Crystallization from aqueous sodium chloride solutions as thin liquid sheets, 0.2-0.7 mm thick, with two free surfaces supported by a wire frame, thick liquid layers, 4-6 mm thick, with two free surfaces supported by metal frame, and hemispherical sessile drops, 20-32 mm diameter, supported by a flat polycarbonate surface or an initially flat gelatin film, were carried out under microgravity on the International Space Station (ISS). Different crystal morphologies resulted based on the fluid geometry: tabular hoppers, hopper cubes, circular [111]-oriented crystals, and dendrites. The addition of polyethylene glycol (PEG-3350) inhibited the hopper growth resulting in flat-faced surfaces. In sessile drops, 1-4 mm tabular hopper crystals formed on the free surface and moved to the fixed contact line at the support (polycarbonate or gelatin) self-assembling into a shell. Ring formation created by sessile drop evaporation to dryness was observed but with crystals 100 times larger than particles in terrestrially formed coffee rings. No hopper pyramids formed. By choosing solution geometries offered by microgravity, we found it was possible to selectively grow crystals of preferred morphologies.

  15. Manufacture of thin-walled clad tubes by pressure welding of roll bonded sheets

    Science.gov (United States)

    Schmidt, Hans Christian; Grydin, Olexandr; Stolbchenko, Mykhailo; Homberg, Werner; Schaper, Mirko

    2017-10-01

    Clad tubes are commonly manufactured by fusion welding of roll bonded metal sheets or, mechanically, by hydroforming. In this work, a new approach towards the manufacture of thin-walled tubes with an outer diameter to wall thickness ratio of about 12 is investigated, involving the pressure welding of hot roll bonded aluminium-steel strips. By preparing non-welded edges during the roll bonding process, the strips can be zip-folded and (cold) pressure welded together. This process routine could be used to manufacture clad tubes in a continuous process. In order to investigate the process, sample tube sections with a wall thickness of 2.1 mm were manufactured by U-and O-bending from hot roll bonded aluminium-stainless steel strips. The forming and welding were carried out in a temperature range between RT and 400°C. It was found that, with the given geometry, a pressure weld is established at temperatures starting above 100°C. The tensile tests yield a maximum bond strength at 340°C. Micrograph images show a consistent weld of the aluminium layer over the whole tube section.

  16. Titanium Alloys Thin Sheet Welding with the Use of Concentrated Solar Energy

    Science.gov (United States)

    Pantelis, D. I.; Kazasidis, M.; Karakizis, P. N.

    2017-12-01

    The present study deals with the welding of titanium alloys thin sheets 1.3 mm thick, with the use of concentrated solar energy. The experimental part of the work took place at a medium size solar furnace at the installation of the Centre National de la Recherche Scientifique, at Odeillo, in Southern France, where similar and dissimilar defect-free welds of titanium Grades 4 and 6 were achieved, in the butt joint configuration. After the determination of the appropriate welding conditions, the optimum welded structures were examined and characterized microstructurally, by means of light optical microscopy, scanning electron microscopy, and microhardness testing. In addition, test pieces extracted from the weldments were tested under uniaxial tensile loading aiming to the estimation of the strength and the ductility of the joint. The analysis of the experimental results and the recorded data led to the basic concluding remarks which demonstrate increased hardness distribution inside the fusion area and severe loss of ductility, but adequate yield and tensile strength of the welds.

  17. Extending the 3ω method: thermal conductivity characterization of thin films.

    Science.gov (United States)

    Bodenschatz, Nico; Liemert, André; Schnurr, Sebastian; Wiedwald, Ulf; Ziemann, Paul

    2013-08-01

    A lock-in technique for measurement of thermal conductivity and volumetric heat capacity of thin films is presented. The technique is based on the 3ω approach using electrical generation and detection of oscillatory heat along a thin metal strip. Thin films are deposited onto the backside of commercial silicon nitride membranes, forming a bilayer geometry with distinct thermal parameters. Stepwise comparison to an adapted heat diffusion model delivers these parameters for both layers. Highest sensitivity is found for metallic thin films.

  18. Characterization of lap joints laser beam welding of thin AA 2024 sheets with Yb:YAG disk-laser

    Science.gov (United States)

    Caiazzo, Fabrizia; Alfieri, Vittorio; Cardaropoli, Francesco; Sergi, Vincenzo

    2012-06-01

    Lap joints obtained by overlapping two plates are widely diffused in aerospace industry. Nevertheless, because of natural aging, adhesively bonded and riveted aircraft lap joints may be affected by cracks from rivets, voids or corrosion. Friction stir welding has been proposed as a valid alternative, although large heat affected zones are produced both in the top and the bottom plate due to the pin diameter. Interest has therefore been shown in studying laser lap welding as the laser beam has been proved to be competitive since it allows to concentrate the thermal input and increases productivity and quality. Some challenges arise as a consequence of aluminum low absorptance and high thermal conductivity; furthermore, issues are due to metallurgical challenges such as both micro and macro porosity formation and softening in the fused zone. Welding of AA 2024 thin sheets in a lap joint configuration is discussed in this paper: tests are carried out using a recently developed Trumpf TruDisk 2002 Yb:YAG disk-laser with high beam quality which allows to produce beads with low plates distortion and better penetration. The influence of the processing parameters is discussed considering the fused zone extent and the bead shape. The porosity content as well as the morphological features of the beads have been examined.

  19. Microstructural evolution in warm-rolled and cold-rolled strip cast 6.5 wt% Si steel thin sheets and its influence on magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xianglong, E-mail: 215454278@qq.com; Liu, Zhenyu, E-mail: zyliu@mail.neu.edu.cn; Li, Haoze; Wang, Guodong

    2017-07-01

    Highlights: • The experimental materials used in the study are based on strip casting. • Magnetic properties between warm rolled and cold rolled sheets are investigated. • Cold rolled 6.5% Si sheet has better magnetic properties than warm rolled sheet. • The γ and λ-fiber recrystallization textures can be optimized after cold rolling. • Cold rolling should be more suitable for fabricating 6.5% Si steel thin sheets. - Abstract: 6.5 wt% Si steel thin sheets were usually fabricated by warm rolling. In our previous work, 6.5 wt% Si steel thin sheets with good magnetic properties had been successfully fabricated by cold rolling based on strip casting. In the present work, the main purposes were to find out the influences of warm rolling and cold rolling on microstructures and magnetic properties of the thin sheets with the thickness of 0.2 mm, and to confirm which rolling method was more suitable for fabricating 6.5 wt% Si steel thin sheets. The results showed that the cold rolled sheet could obtain good surface quality and flatness, while the warm rolled sheet could not. The intensity of γ-fiber rolling texture (<1 1 1>//ND) of cold rolled specimen was weaker than that of the warm rolled specimen, especially for the {1 1 1}<1 1 2> component at surface layer and {1 1 1}<1 1 0> component at center layer. After the same annealing treatment, the cold rolled specimen, which had higher stored energy and weaker intensity of γ-fiber rolling texture, could obtain smaller recrystallization grain size, weaker intensity of γ-fiber recrystallization texture and stronger intensity of λ-fiber recrystallization texture. Therefore, due to the good surface quality, smaller recrystallization grain size and optimum recrystallization texture, the cold rolled specimen possessed improved magnetic properties, and cold rolling should be more suitable for fabricating 6.5 wt% Si steel thin sheets.

  20. Effects of die quench forming on sheet thinning and 3-point bend testing of AA7075-T6

    Science.gov (United States)

    Kim, Samuel; Omer, Kaab; Rahmaan, Taamjeed; Butcher, Clifford; Worswick, Michael

    2017-10-01

    Lab-scaled AA7075 aluminum side impact beams were manufactured using the die quenching technique in which the sheet was solutionized and then quenched in-die during forming to a super saturated solid state. Sheet thinning measurements were taken at various locations throughout the length of the part and the effect of lubricant on surface scoring and material pick-up on the die was evaluated. The as-formed beams were subjected to a T6 aging treatment and then tested in three-point bending. Simulations were performed of the forming and mechanical testing experiments using the LS-DYNA finite element code. The thinning and mechanical response was predicted well.

  1. Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

    Science.gov (United States)

    Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

    2013-01-01

    Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

  2. Kinetic instabilities of thin current sheets: Results of two-and-one-half-dimensional Vlasov code simulations

    International Nuclear Information System (INIS)

    Silin, I.; Buechner, J.

    2003-01-01

    Nonlinear triggering of the instability of thin current sheets is investigated by two-and-one-half- dimensional Vlasov code simulations. A global drift-resonant instability (DRI) is found, which results from the lower-hybrid-drift waves penetrating from the current sheet edges to the center where they resonantly interact with unmagnetized ions. This resonant nonlinear instability grows faster than a Kelvin-Helmholtz instability obtained in previous studies. The DRI is either asymmetric or symmetric mode or a combination of the two, depending on the relative phase of the lower-hybrid-drift waves at the edges of the current sheet. With increasing particle mass ratio the wavenumber of the fastest-growing mode increases as kL z ∼(m i /m e ) 1/2 /2 and the growth rate of the DRI saturates at a finite level

  3. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.; Liu, Y.; de Jong, M.M.; de Wild, J.; Schuttauf, J.A.; Brinza, M.; Schropp, R.E.I.

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  4. The effect of ZnS thin film's electrical conductivity on electromagnetic ...

    African Journals Online (AJOL)

    The effect of electrical conductivity on an electromagnetic wave propagating through ZnS thin film is analyzed using electromagnetic wave equation with relevant boundary condition. The solution of this equation enabled us to obtain a parameter known as the skin depth that relates to the conductivity of the thin film. This was ...

  5. Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

    KAUST Repository

    Lu, Chunjing; Ben, Teng; Xu, Shixian; Qiu, Shilun

    2014-01-01

    A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous

  6. Thin, Conductive, Pyrrolyc film production for radioactive sources backings

    International Nuclear Information System (INIS)

    Rodriguez, L.; Arcos, J.M. los

    1993-01-01

    A procedure for electro polymerization of pyrrole has been set up in order to produce thin, (> 15 μg/cm2) homogeneous (thickness variation < 2%) films, with no need for additional metallization to be used as backings of radioactive sources, having 10-0,4 Kfl/sample, for 35-70 μg/cm . The experimental equipment, reagent and procedure utilized is described as well as the characterization of Pyrrolyc films produced. (Author) 28 refs

  7. Spontaneous formation of stringlike clusters and smectic sheets for colloidal rods confined in thin wedgelike gaps.

    Science.gov (United States)

    Maeda, Hideatsu; Maeda, Yoshiko

    2013-08-20

    Monodispersed colloidal rods of β-FeOOH with sizes ranging from 270 to 580 nm in length and 50 to 80 nm in width were synthesized. Narrow wedgelike gaps (0 to 700 nm in height) were formed around the inner bottom edge of the suspension glass cells. Optical microscopic observations revealed the formation of stringlike clusters of the rods and smectic sheets (by spontaneous side-by-side clustering of the strings) in the isotropic phase of the rod suspensions confined in narrow gaps; the electrolyte (HCl) concentrations of the suspensions are 5-40 mM, at which inter-rod interactions are attractive. The strings exhibit different colors that were used to investigate the structures of the strings with the help of interference color theory for thin films. The results are as follows. (1) The rods, lying flat on the gap bottom, are connected side-by-side and stacked upward to form stringlike clusters with different thicknesses depending on the gap height. (2) The stacking numbers (N(sr)) of the rods are estimated to be 1-5. With N(sr) increasing from 2 to 5, the volume fractions (ϕ) of the rods in the strings increased typically from 0.25-0.3 to 0.35-0.42 to reach limiting values (close to the ϕ values of the rods in the bulk smectic phase). (3) Unexpected low-ϕ strings are found in regions with an intermediate height in the gaps. These behaviors of ϕ may be caused by thermal fluctuations of the strings.

  8. Variable viscosity and thermal conductivity effects on MHD flow and heat transfer in viscoelastic fluid over a stretching sheet

    International Nuclear Information System (INIS)

    Salem, Ahmed M.

    2007-01-01

    The problem of flow and heat transfer of an electrically conducting viscoelastic fluid over a continuously stretching sheet in the presence of a uniform magnetic field is analyzed for the case of power-law variation in the sheet temperature. The fluid viscosity and thermal conductivity are assumed to vary as a function of temperature. The basic equations comprising the balance laws of mass, linear momentum, and energy modified to include the electromagnetic force effect, the viscous dissipation, internal heat generation or absorption and work due to deformation are solved numerically

  9. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-01-01

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  10. AC electrical conductivity in amorphous indium selenide thin films

    International Nuclear Information System (INIS)

    Di Giulio, H.; Rella, R.; Tepore, A.

    1987-01-01

    In order to obtain additional information about the nature of the conduction mechanism in amorphous InSe films results of an experimental study concerning the frequency and temperature dependence of the ac conductivity are reported. The measurements were performed on specimens of different thickness and different electrode contact areas. The results can be explained assuming that conduction occurs by phonon-assisted hopping between localized states near the Fermi level

  11. Cutting thin sheets of allyl diglycol carbonate (CR-39) with a CW CO2, laser

    International Nuclear Information System (INIS)

    Kukreja, L.M.; Bhawalkar, D.D.; Basu, C.; Goswami, J.N.

    1984-01-01

    Recent studies have shown that Allyl Diglycol Carbonate, commercially known as CR-39 (the most sensitive among etch track detectors) can detect relativistic oxygen and other heavier nuclei. We are using large sheets of special grade CR-39 (DOP) in our experiment in Space Shuttle-Spacelab-3. As CR-39 is a highly brittle substance, special care is required to cut CR-39 shetts, especially in case of large sheets and circular cuts. A study of cutting of CR-39 sheets using laser light is described in this paper. It has been found that this method is sufficiently fast to handle large number of sheets and also equally safe for big sheets. A maximum speed up to 200 cm/min with a 5 x 10 4 W/cm 2 laser is obtained during the present study. This study also shows that laser cutting does not affect the track properties of CR-39. (orig.)

  12. Mesoporous polyaniline film on ultra-thin graphene sheets for high performance supercapacitors

    Science.gov (United States)

    Wang, Qian; Yan, Jun; Fan, Zhuangjun; Wei, Tong; Zhang, Milin; Jing, Xiaoyan

    2014-02-01

    A facile approach has been developed to fabricate mesoporous PANI film on ultra-thin graphene nanosheet (G-mPANI) hybrid by in situ polymerization using graphene-mesoporous silica composite as template. Due to its mesoporous structure, over-all conductive network, G-mPANI electrode displays a specific capacitance of 749 F g-1 at 0.5 A g-1 with excellent rate capability (remains 73% even at 5.0 A g-1), much higher than that of pristine PANI electrode (315 F g-1 at 0.5 A g-1, 39% retention at 5.0 A g-1) in 1 mol L-1 H2SO4 aqueous solution. More interestingly, the G-mPANI hybrid can maintain 88% of its initial capacitance compared to 45% for pristine PANI after 1000 cycles, suggesting a superior electrochemical cyclic stability.

  13. Electrical conductivity of free-standing mesoporous silicon thin films

    International Nuclear Information System (INIS)

    Khardani, M.; Bouaicha, M.; Dimassi, W.; Zribi, M.; Aouida, S.; Bessais, B.

    2006-01-01

    The effective electrical conductivity of free-standing p + -type porous silicon layers having porosities ranging from 30% to 80% was studied at both experimental and theoretical sides. An Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon (PS) films were prepared by the electrochemical etching method for different values of the anodic current density. In order to model the PS electrical conductivity, the free-standing porous layer was assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of the mesoporous film to the value of the effective band gap energy estimated from the absorption coefficient. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities

  14. Thermal conductivity of silicon nanocrystals and polystyrene nanocomposite thin films

    International Nuclear Information System (INIS)

    Juangsa, Firman Bagja; Muroya, Yoshiki; Nozaki, Tomohiro; Ryu, Meguya; Morikawa, Junko

    2016-01-01

    Silicon nanocrystals (SiNCs) are well known for their size-dependent optical and electronic properties; they also have the potential for low yet controllable thermal properties. As a silicon-based low-thermal conductivity material is required in microdevice applications, SiNCs can be utilized for thermal insulation. In this paper, SiNCs and polymer nanocomposites were produced, and their thermal conductivity, including the density and specific heat, was measured. Measurement results were compared with thermal conductivity models for composite materials, and the comparison shows a decreasing value of the thermal conductivity, indicating the effect of the size and presence of the nanostructure on the thermal conductivity. Moreover, employing silicon inks at room temperature during the fabrication process enables a low cost of fabrication and preserves the unique properties of SiNCs. (paper)

  15. Conduction properties of thin films from a water soluble carbon nanotube/hemicellulose complex

    Science.gov (United States)

    Shao, Dongkai; Yotprayoonsak, Peerapong; Saunajoki, Ville; Ahlskog, Markus; Virtanen, Jorma; Kangas, Veijo; Volodin, Alexander; Van Haesendonck, Chris; Burdanova, Maria; Mosley, Connor D. W.; Lloyd-Hughes, James

    2018-04-01

    We have examined the conductive properties of carbon nanotube based thin films, which were prepared via dispersion in water by non-covalent functionalization of the nanotubes with xylan, a type of hemicellulose. Measurements of low temperature conductivity, Kelvin probe force microscopy, and high frequency (THz) conductivity elucidated the intra-tube and inter-tube charge transport processes in this material. The measurements show excellent conductive properties of the as prepared thin films, with bulk conductivity up to 2000 S cm-1. The transport results demonstrate that the hemicellulose does not seriously interfere with the inter-tube conductance.

  16. Application of YAG Laser TIG Arc Hybrid Welding to Thin AZ31B Magnesium Alloy Sheet

    Science.gov (United States)

    Kim, Taewon; Kim, Jongcheol; Hasegawa, Yu; Suga, Yasuo

    A magnesium alloy is said to be an ecological material with high ability of recycling and lightweight property. Especially, magnesium alloys are in great demand on account of outstanding material property as a structural material. Under these circumstances, research and development of welding process to join magnesium alloy plates are of great significance for wide industrial application of magnesium. In order to use it as a structure material, the welding technology is very important. TIG arc welding process is the most ordinary process to weld magnesium alloy plates. However, since the heat source by the arc welding process affects the magnesium alloy plates, HAZ of welded joint becomes wide and large distortion often occurs. On the other hand, a laser welding process that has small diameter of heat source seems to be one of the possible means to weld magnesium alloy in view of the qualitative improvement. However, the low boiling point of magnesium generates some weld defects, including porosity and solidification cracking. Furthermore, precise edge preparation is very important in butt-welding by the laser welding process, due to the small laser beam diameter. Laser/arc hybrid welding process that combines the laser beam and the arc is an effective welding process in which these two heat sources influence and assist each other. Using the hybrid welding, a synegistic effect is achievable and the disadvantages of the respective processes can be compensated. In this study, YAG laser/TIG arc hybrid welding of thin magnesium alloy (AZ31B) sheets was investigated. First of all, the effect of the irradiation point and the focal position of laser beam on the quality of a weld were discussed in hybrid welding. Then, it was confirmed that a sound weld bead with sufficient penetration is obtained using appropriate welding conditions. Furthermore, it was made clear that the heat absorption efficiency is improved with the hybrid welding process. Finally, the tensile tests

  17. Conductivity, work function, and environmental stability of PEDOT:PSS thin films treated with sorbitol

    NARCIS (Netherlands)

    Nardes, A.M.; Kemerink, M.; Kok, de M.M.; Vinken, E.; Maturova, K.; Janssen, R.A.J.

    2008-01-01

    The electrical properties of poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) thin films deposited from aqueous dispersion using different concentrations of sorbitol have been studied in detail. Although it is well known that sorbitol enhances the conductivity of PEDOT:PSS thin

  18. MHD Flow and Heat Transfer Characteristics in a Casson Liquid Film Towards an Unsteady Stretching Sheet with Temperature-Dependent Thermal Conductivity

    Science.gov (United States)

    Mahmoud, Mostafa A. A.; Megahed, Ahmed M.

    2017-10-01

    Theoretical and numerical outcomes of the non-Newtonian Casson liquid thin film fluid flow owing to an unsteady stretching sheet which exposed to a magnetic field, Ohmic heating and slip velocity phenomena is reported here. The non-Newtonian thermal conductivity is imposed and treated as it vary with temperature. The nonlinear partial differential equations governing the non-Newtonian Casson thin film fluid are simplified into a group of highly nonlinear ordinary differential equations by using an adequate dimensionless transformations. With this in mind, the numerical solutions for the ordinary conservation equations are found using an accurate shooting iteration technique together with the Runge-Kutta algorithm. The lineaments of the thin film flow and the heat transfer characteristics for the pertinent parameters are discussed through graphs. The results obtained here detect many concern for the local Nusselt number and the local skin-friction coefficient in which they may be beneficial for the material processing industries. Furthermore, in some special conditions, the present problem has an excellent agreement with previously published work.

  19. There's no place like Ohm: conduction in oxide thin films.

    Science.gov (United States)

    Scott, J F

    2014-04-09

    A pedagogical essay is given that alerts researchers to the errors inherent in assigning linear I(V) current-voltage dependences to Ohmic conduction. Such a linear I(V) is necessary but not sufficient, since other mechanisms, including Simmons' modification of the basic Schottky emission theory, also give linear I(V) at small applied voltages. Discrimination among Ohmic, Schottky, space-charge limited, and other models requires accurate thickness dependence I(d) data, where for Ohmic conduction I=a/d, whereas for interface-limited mechanisms such as Simmons/Schottky, I is nearly independent of d.

  20. Space charge limited conduction in CdSe thin films

    Indian Academy of Sciences (India)

    Unknown

    of trap limited space charge limited conduction (SCLC) at higher voltage. The transition voltage (Vt ) from ohmic to SCLC is found to be quite independent of ambient temperature as well as intensity of illumination. SCLC is explained on the basis of the exponential trap distribution in CdSe films. Trap depths estimated from.

  1. Electrical transport properties of spray deposited transparent conducting ortho-Zn2SnO4 thin films

    Science.gov (United States)

    Ramarajan, R.; Thangaraju, K.; Babu, R. Ramesh; Joseph, D. Paul

    2018-04-01

    Ortho Zinc Stannate (Zn2SnO4) exhibits excellent electrical and optical properties to serve as alternate transparent electrode in optoelectronic devices. Here we have optimized ortho-Zn2SnO4 thin film by spray pyrolysis method. Deposition was done onto a pre-heated glass substrate at a temperature of 400 °C. The XRD pattern indicated films to be polycrystalline with cubic structure. The surface of films had globular and twisted metal sheet like morphologies. Films were transparent in the visible region with band gap around 3.6 eV. Transport properties were studied by Hall measurements at 300 K. Activation energies were calculated from Arrhenius's plot from temperature dependent electrical measurements and the conduction mechanism is discussed.

  2. Effects of the amino acid sequence on thermal conduction through β-sheet crystals of natural silk protein.

    Science.gov (United States)

    Zhang, Lin; Bai, Zhitong; Ban, Heng; Liu, Ling

    2015-11-21

    Recent experiments have discovered very different thermal conductivities between the spider silk and the silkworm silk. Decoding the molecular mechanisms underpinning the distinct thermal properties may guide the rational design of synthetic silk materials and other biomaterials for multifunctionality and tunable properties. However, such an understanding is lacking, mainly due to the complex structure and phonon physics associated with the silk materials. Here, using non-equilibrium molecular dynamics, we demonstrate that the amino acid sequence plays a key role in the thermal conduction process through β-sheets, essential building blocks of natural silks and a variety of other biomaterials. Three representative β-sheet types, i.e. poly-A, poly-(GA), and poly-G, are shown to have distinct structural features and phonon dynamics leading to different thermal conductivities. A fundamental understanding of the sequence effects may stimulate the design and engineering of polymers and biopolymers for desired thermal properties.

  3. Transparent conductive Ta2O5-codoped ITO thin films prepared by different heating process

    International Nuclear Information System (INIS)

    Zhang, B.; Dong, X.P.; Wu, J.S.; Xu, X.F.

    2008-01-01

    Tantalum-doped indium tin oxide thin films were deposited by a cosputtering technique with an ITO target and a Ta 2 O 5 target. The variations of microstructure, electrical and optical properties with substrate temperature and annealing temperature were investigated in some detail. Ta-doped ITO thin films showed better crystalline structure with different prominent plane orientation by different heating process. ITO:Ta thin films deposited at room temperature showed better optical and electrical properties. Increasing substrate temperature and reasonable annealing temperature could remarkably improve the optical and electrical properties of the films. The variation of carrier concentration had an important influence on near-IR reflection, near-UV absorption and optical bandgap. ITO:Ta thin films showed wider optical bandgap. ITO:Ta thin films under the optimum parameters had a sheet resistance of 10-20 and ohm;/sq and a transmittance of 85% with an optical bandgap of above 4.0 eV. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Effects of β-sheet crystals and a glycine-rich matrix on the thermal conductivity of spider dragline silk.

    Science.gov (United States)

    Park, Jinju; Kim, Duckjong; Lee, Seung-Mo; Choi, Ji-Ung; You, Myungil; So, Hye-Mi; Han, Junkyu; Nah, Junghyo; Seol, Jae Hun

    2017-03-01

    We measured the thermal conductivity of Araneus ventricosus' spider dragline silk using a suspended microdevice. The thermal conductivity of the silk fiber was approximately 0.4Wm -1 K -1 at room temperature and gradually increased with an increasing temperature in a manner similar to that of other disordered crystals or proteins. In order to elucidate the effect of β-sheet crystals in the silk, thermal denaturation was used to reduce the quantity of the β-sheet crystals. A calculation with an effective medium approximation supported this measurement result showing that the thermal conductivity of β-sheet crystals had an insignificant effect on the thermal conductivity of SDS. Additionally, the enhancement of bonding strength in a glycine-rich matrix by atomic layer deposition did not increase the thermal conductivity. Thus, this study suggests that the disordered part of the glycine-rich matrix prevented the peptide chains from being coaxially extended via the cross-linking covalent bonds. Copyright © 2016 Elsevier B.V. All rights reserved.

  5. Growth of conductive HfO{sub 2-x} thin films by reactive molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Kleebe, Hans-Joachim [Institut fuer Angewandte Geowissenschaften, TU Darmstadt (Germany)

    2009-07-01

    Thin films of oxygen deficient hafnium oxide were grown on single crystal c-cut and r-cut sapphire substrates by reactive molecular beam epitaxy. The oxidation conditions during growth were varied within a wide range using RF-activated oxygen. Hafnium oxide thin films were characterized using X-ray diffraction, resistivity measurements ({rho}-T) and transmission electron microscopy (TEM). The results show a dramatic increase in conductivity of the deposited oxygen deficient hafnium oxide thin films with decreasing oxidation conditions during growth. The electrical properties of deficient hafnium oxide thin films varied from insulating over semiconducting to conducting. X-ray diffraction data as well as TEM data rule out the possibility of conductivity due to metallic hafnium.

  6. Strain tensor selection and the elastic theory of incompatible thin sheets.

    Science.gov (United States)

    Oshri, Oz; Diamant, Haim

    2017-05-01

    The existing theory of incompatible elastic sheets uses the deviation of the surface metric from a reference metric to define the strain tensor [Efrati et al., J. Mech. Phys. Solids 57, 762 (2009)JMPSA80022-509610.1016/j.jmps.2008.12.004]. For a class of simple axisymmetric problems we examine an alternative formulation, defining the strain based on deviations of distances (rather than distances squared) from their rest values. While the two formulations converge in the limit of small slopes and in the limit of an incompressible sheet, for other cases they are found not to be equivalent. The alternative formulation offers several features which are absent in the existing theory. (a) In the case of planar deformations of flat incompatible sheets, it yields linear, exactly solvable, equations of equilibrium. (b) When reduced to uniaxial (one-dimensional) deformations, it coincides with the theory of extensible elastica; in particular, for a uniaxially bent sheet it yields an unstrained cylindrical configuration. (c) It gives a simple criterion determining whether an isometric immersion of an incompatible sheet is at mechanical equilibrium with respect to normal forces. For a reference metric of constant positive Gaussian curvature, a spherical cap is found to satisfy this criterion except in an arbitrarily narrow boundary layer.

  7. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  8. Thinning and functionalization of few-layer graphene sheets by CF4 plasma treatment

    KAUST Repository

    Shen, Chao

    2012-05-24

    Structural changes of few-layer graphene sheets induced by CF4 plasma treatment are studied by optical microscopy and Raman spectroscopy, together with theoretical simulation. Experimental results suggest a thickness reduction of few-layer graphene sheets subjected to prolonged CF4 plasma treatment while plasma treatment with short time only leads to fluorine functionalization on the surface layer by formation of covalent bonds. Raman spectra reveal an increase in disorder by physical disruption of the graphene lattice as well as functionalization during the plasma treatment. The F/CF3 adsorption and the lattice distortion produced are proved by theoretical simulation using density functional theory, which also predicts p-type doping and Dirac cone splitting in CF4 plasma-treated graphene sheets that may have potential in future graphene-based micro/nanodevices.

  9. Failure Models of Thin-walled Steel Sheeting and Structural-spatial Design Process

    NARCIS (Netherlands)

    Hofmeyer, H.

    2009-01-01

    This presentation is the first on 20 years of research on the failure mechanisms of sheeting subjected to combined concentrated load and bending moment, performed at Technische Universiteit Eindhoven. The aim of this research is to develop accurate, insight providing design rules using simple

  10. Multi-decadal dynamic thinning on the northwest margin of the Greenland Ice Sheet

    DEFF Research Database (Denmark)

    Korsgaard, Niels Jákup; Kjær, Kurt H.; Khan, Shfaqat Abbas

    records with a 25 m grid resolution and vertical uncertainty of 4.6m. Comparative DEMs were derived from laser altimetry data recorded in 2005 and 2010. Ice loss from the Greenland Ice Sheet (GrIS) can be partitioned into surface mass balance (SMB) processes (runoff and precipitation) and ice dynamics...

  11. Amorphous semiconducting and conducting transparent metal oxide thin films and production thereof

    Science.gov (United States)

    Perkins, John; Van Hest, Marinus Franciscus Antonius Maria; Ginley, David; Taylor, Matthew; Neuman, George A.; Luten, Henry A.; Forgette, Jeffrey A.; Anderson, John S.

    2010-07-13

    Metal oxide thin films and production thereof are disclosed. An exemplary method of producing a metal oxide thin film may comprise introducing at least two metallic elements and oxygen into a process chamber to form a metal oxide. The method may also comprise depositing the metal oxide on a substrate in the process chamber. The method may also comprise simultaneously controlling a ratio of the at least two metallic elements and a stoichiometry of the oxygen during deposition. Exemplary amorphous metal oxide thin films produced according to the methods herein may exhibit highly transparent properties, highly conductive properties, and/or other opto-electronic properties.

  12. Thin films of conductive ZnO patterned by micromolding resulting in nearly isolated features

    NARCIS (Netherlands)

    Göbel, Ole; Blank, David H.A.; ten Elshof, Johan E.

    2010-01-01

    Patterned and continuous thin films of conductive Al-doped zinc oxide (ZnO:Al) were prepared on different substrates from a polymeric precursor solution. Their electric conductivity and light transmittance (for visible and UV light) was measured at room temperature. By means of a simple device,

  13. Structural, dielectric and AC conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    52

    However, to date, no reports have appeared on impedance spectroscopy, modulus behavior, electrical conductivity, dielectric relaxation and dielectric properties of crystalline Sb2O3 thin films. This paper deals for the first time with the frequency and temperature dependence of AC conductivity and complex electric modulus ...

  14. Microscopic understanding of the anisotropic conductivity of PEDOT:PSS thin films

    NARCIS (Netherlands)

    Nardes, A.M.; Kemerink, M.; Janssen, R.A.J.; Bastiaansen, J.J.A.M.; Kiggen, N.M.M.; Langeveld, B.M.W.; Breemen, A.J.J.M. van; Kok, M.M. de

    2007-01-01

    The anisotropic conductivity of spin-coated poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin films by temperature-dependent conductivity measurements, has been analyzed. A detailed 3D morphological model was derived from topographic scanning tunneling microscopy (STM) and

  15. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Science.gov (United States)

    Jarad, Amer N.; Ibrahim, Kamarulazizi; Ahmed, Nasser M.

    2016-07-01

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10-5 (Ω.cm)-1, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  16. Synthesis and characterization thin films of conductive polymer (PANI) for optoelectronic device application

    Energy Technology Data Exchange (ETDEWEB)

    Jarad, Amer N., E-mail: amer78malay@yahoo.com.my; Ibrahim, Kamarulazizi, E-mail: kamarul@usm.my; Ahmed, Nasser M., E-mail: nas-tiji@yahoo.com [Nano-optoelectronic Research and Technology Laboratory School of physics, University of Sains Malaysia, 11800 Pulau Pinang (Malaysia)

    2016-07-06

    In this work we report preparation and investigation of structural and optical properties of polyaniline conducting polymer. By using sol-gel in spin coating technique to synthesize thin films of conducting polymer polyaniline (PANI). Conducting polymer polyaniline was synthesized by the chemical oxidative polymerization of aniline monomers. The thin films were characterized by technique: Hall effect, High Resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy, Field emission scanning electron microscopy (FE-SEM), and UV-vis spectroscopy. Polyaniline conductive polymer exhibit amorphous nature as confirmed by HR-XRD. The presence of characteristic bonds of polyaniline was observed from FTIR spectroscopy technique. Electrical and optical properties revealed that (p-type) conductivity PANI with room temperature, the conductivity was 6.289×10{sup −5} (Ω.cm){sup −1}, with tow of absorption peak at 426,805 nm has been attributed due to quantized size of polyaniline conducting polymer.

  17. ZnO-Based Transparent Conductive Thin Films: Doping, Performance, and Processing

    International Nuclear Information System (INIS)

    Liu, Y.; Li, Y.; Zeng, H.

    2013-01-01

    ZnO-based transparent conductive thin films have attracted much attention as a promising substitute material to the currently used indium-tin-oxide thin films in transparent electrode applications. However, the detailed function of the dopants, acting on the electrical and optical properties of ZnO-based transparent conductive thin films, is not clear yet, which has limited the development and practical applications of ZnO transparent conductive thin films. Growth conditions such as substrate type, growth temperature, and ambient atmosphere all play important roles in structural, electrical, and optical properties of films. This paper takes a panoramic view on properties of ZnO thin films and reviews the very recent works on new, efficient, low-temperature, and high-speed deposition technologies. In addition, we highlighted the methods of producing ZnO-based transparent conductive film on flexible substrate, one of the most promising and rapidly emerging research areas. As optimum-processing-parameter conditions are being obtained and their influencing mechanism is becoming clear, we can see that there will be a promising future for ZnO-based transparent conductive films.

  18. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...... solution-processed masks for physical vapor-deposited metal electrodes consisting of hexagonally ordered aperture arrays with scalable aperture-size and spacing in an otherwise homogeneous noble metal thin-film that may exhibit better electrical performance than carbon nanotube-based thin-films...... for equivalent optical transparency. The fabricated electrodes are characterized optically and electrically by measuring transmittance and sheet resistance. The presented methods yield large-scale reproducible results. Experimentally realized thin-films with very low sheet resistance, Rsh = 2.01 ± 0.14 Ω...

  19. Conformable Skin-Like Conductive Thin Films with AgNWs Strips for Flexible Electronic Devices

    Directory of Open Access Journals (Sweden)

    Yuhang SUN

    2015-08-01

    Full Text Available Keeping good conductivity at high stretching strain is one of the main requirements for the fabrication of flexible electronic devices. The elastic nature of siloxane-based elastomers enables many innovative designs in wearable sensor devices and non-invasive insertion instruments, including skin-like tactile sensors. Over the last few years, polydimethylsiloxane (PDMS thin films have been widely used as the substrates in the fabrication of flexible electronic devices due to their good elasticity and outstanding biocompatibility. However, these kind of thin films usually suffer poor resistance to tearing and insufficient compliance to curved surfaces, which limits their applications. Currently no three-dimensionally mountable tactile sensor arrays have been reported commercially available. In this work, we developed a kind of mechanically compliant skin-like conductive thin film by patterning silver nano wire traces in strip-style on Dragon Skin® (DS substrates instead of PDMS. High cross- link quality was achieved then. To further improve the conductivity, a thin gold layer was coated onto the silver nanowires (AgNWs strips. Four different gold deposition routines have been designed and investigated by using different E-beam and spin coating processing methods. Owning to the intrinsically outstanding physical property of the Dragon Skin material and the uniform embedment built in the gold deposition processes, the DS/AgNWs thin films showed convincible advantages over PDMS/AgNWs thin films in both mechanical capability and conductive stability. Through experimental tests, the DS/AgNWs electrode thin films were proven to be able to maintain high conductivity following repeated linear deformations.

  20. The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers

    Science.gov (United States)

    Buehler, M. G.; Hershey, C. W.

    1986-01-01

    A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.

  1. A study of dynamic resistance during small scale resistance spot welding of thin Ni sheets

    International Nuclear Information System (INIS)

    Tan, W; Zhou, Y; Kerr, H W; Lawson, S

    2004-01-01

    The dynamic resistance has been investigated during small scale resistance spot welding (SSRSW) of Ni sheets. Electrical measurements have been correlated with scanning electron microscope images of joint development. The results show that the dynamic resistance curve can be divided into the following stages based on physical change in the workpieces: asperity heating, surface breakdown, asperity softening, partial surface melting, nugget growth and expulsion. These results are also compared and contrasted with dynamic resistance behaviour in large scale RSW

  2. Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2010-05-26

    We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

  3. Onset of fast "ideal" tearing in thin current sheets: Dependence on the equilibrium current profile

    Science.gov (United States)

    Pucci, F.; Velli, M.; Tenerani, A.; Del Sarto, D.

    2018-03-01

    In this paper, we study the scaling relations for the triggering of the fast, or "ideal," tearing instability starting from equilibrium configurations relevant to astrophysical as well as laboratory plasmas that differ from the simple Harris current sheet configuration. We present the linear tearing instability analysis for equilibrium magnetic fields which (a) go to zero at the boundary of the domain and (b) contain a double current sheet system (the latter previously studied as a Cartesian proxy for the m = 1 kink mode in cylindrical plasmas). More generally, we discuss the critical aspect ratio scalings at which the growth rates become independent of the Lundquist number S, in terms of the dependence of the Δ' parameter on the wavenumber k of unstable modes. The scaling Δ'(k) with k at small k is found to categorize different equilibria broadly: the critical aspect ratios may be even smaller than L/a ˜ Sα with α = 1/3 originally found for the Harris current sheet, but there exists a general lower bound α ≥ 1/4.

  4. Preparation of Aluminum Nanomesh Thin Films from an Anodic Aluminum Oxide Template as Transparent Conductive Electrodes

    Science.gov (United States)

    Li, Yiwen; Chen, Yulong; Qiu, Mingxia; Yu, Hongyu; Zhang, Xinhai; Sun, Xiao Wei; Chen, Rui

    2016-02-01

    We have employed anodic aluminum oxide as a template to prepare ultrathin, transparent, and conducting Al films with a unique nanomesh structure for transparent conductive electrodes. The anodic aluminum oxide template is obtained through direct anodization of a sputtered Al layer on a glass substrate, and subsequent wet etching creates the nanomesh metallic film. The optical and conductive properties are greatly influenced by experimental conditions. By tuning the anodizing time, transparent electrodes with appropriate optical transmittance and sheet resistance have been obtained. The results demonstrate that our proposed strategy can serve as a potential method to fabricate low-cost TCEs to replace conventional indium tin oxide materials.

  5. Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

    International Nuclear Information System (INIS)

    Norwood, D.P.

    1989-01-01

    A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

  6. Texture and structure of VT-19 alloy thin sheets and their welded joints

    International Nuclear Information System (INIS)

    Ehgiz, I.V.; Babarehko, A.A.; Khorev, M.A.

    1986-01-01

    The phase content and texture of VT-19 alloys in all zones of welded joints (weld, a heat affected zone a base metal) after different heat treatments and the effect of the latter on mechanical properties of the welded joint are studied. It is characteristic of a 2.5 mm sheet of the VT-19 alloy rolled in the β → α phase transformation temperature range the development of β-phase plane deformation textures with (001), (112), (111) orientations in the rolling plane that compose 56% of the β-phase material volume. In this case a texture of univariant phase transformation of the above β-phase components { 1120 } - { 1122 } - { 1124 }, as well as that of α-phase plane deformation } 1014 } - { 1015 } are formed in the α-phase. Hardening with subsequent ageing of the rolled sheet leads to increasing the fraction of textured material in the β-phase up to 95% with expanding the volume with the (111) orientation, but as a whole the β-phase texture type remains the same. The α-phase texture type corresponds to the univariant β → α phase transformation, the material having the α-phase texture accounts for 70%. In the weld zone the and axes with orientation spreading to 20 deg are the β-phase crystallization axes in the trans verse direction. The textured material accounts for ∼ 70%. The same texture is observed along the normal to the sheet plane. The α-phase texture after hardening and ageing corresponds to the univariant phase transformation of the above-mentionedβ-phase orientations, the material volume with the α-phase texture is ∼80%

  7. A comprehensive study of the electrically conducting water based CuO and Al2O3 nanoparticles over coupled nanofluid-sheet interface

    International Nuclear Information System (INIS)

    Ahmad, R

    2016-01-01

    Many studies on nanofluid flow over a permeable/impermeable sheet prescribe the kinematics of the sheet and disregard the sheet’s mechanics. However, the current study is one of the infrequent contributions that anticipate the mechanics of both the electrically conducting nanofluid (a homogeneous mixture of nanoparticles and base fluid) and the sheet. Two types of nanoparticles, alumina and copper, with water as a base fluid over the sheet are considered. With the help of the similarity transformations, the corresponding partial differential equations for the coupled nanofluid-sheet interface are transformed into a system of ordinary differential equations. The simulations are done by using the experimentally verified results from the previous studies for viscosity and thermal conductivity. Self-similar solutions are attained by considering both analytical and numerical techniques. Dual skin friction coefficients are attained with different copper and alumina nanoparticles over both the stretching and viscous sheets. The influence of the Eckert number, magnetic and mass suction/blowing parameters on the dimensionless velocity, temperature, skin friction and heat transfer rates over the nanofluid-sheet interface are presented graphically as well as numerically. The obtained results are of potential benefit for studying nanofluid flow over various soft surfaces such as synthetic plastics, soft silicone sheet and soft synthetic rubber sheet. These surfaces are easily deformed by thermal fluctuations. (paper)

  8. Study of microstructural evolution in friction-stir welded thin-sheet Al-Cu-Li alloy using transmission-electron microscopy

    International Nuclear Information System (INIS)

    Shukla, A.K.; Baeslack, W.A.

    2007-01-01

    Microstructure evolution in friction-stir welded thin-sheet Al-Cu-Li alloy was studied using transmission-electron microscopy (TEM) and the dissolution and coarsening of T 1 and θ' precipitates were related to the microhardness profile of the weld

  9. Morphological differences in transparent conductive indium-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis

    International Nuclear Information System (INIS)

    Jongthammanurak, Samerkhae; Cheawkul, Tinnaphob; Witana, Maetapa

    2014-01-01

    In-doped ZnO thin films were deposited on glass substrates by an ultrasonic spray pyrolysis technique, using indium chloride (InCl 3 ) as a dopant and zinc acetate solution as a precursor. Increasing the [at.% In]/[at.% Zn] ratio changed the crystal orientations of thin films, from the (100) preferred orientation in the undoped, to the (101) and (001) preferred orientations in the In-doped ZnO thin films with 4 at.% and 6–8 at.%, respectively. Undoped ZnO thin film shows relatively smooth surface whereas In-doped ZnO thin films with 4 at.% and 6–8 at.% show surface features of pyramidal forms and hexagonal columns, respectively. X-ray diffraction patterns of the In-doped ZnO thin films with [at.% In]/[at.% Zn] ratios of 6–8% presented an additional peak located at 2-theta of 32.95°, which possibly suggested that a metastable Zn 7 In 2 O 10 phase was present with the ZnO phase. ZnO thin films doped with 2 at.% In resulted in a sheet resistance of ∼ 645 Ω/sq, the lowest value among thin films with [at.% In]/[at.% Zn] ratio in a range of 0–8%. The precursor molarity was changed between 0.05 M and 0.20 M at an [at.% In]/[at.% Zn] ratio of 2%. Increasing the precursor molarity in a range of 0.10 M–0.20 M resulted in In-doped ZnO thin films with the (100) preferred orientation. An In-doped ZnO thin film deposited by 0.20 M precursor showed a sheet resistance of 25 Ω/sq, and an optical transmission of 75% at 550 nm wavelength. The optical band gap estimated from the transmission result was 3.292 eV. - Highlights: • Indium-doped ZnO thin films were grown on glass using ultrasonic spray pyrolysis. • Thin films' orientations depend on In doping and Zn molarity of precursor solution. • Highly c-axis or a-axis orientations were found in the In-doped ZnO thin films. • In doping of 6–8 at.% may have resulted in ZnO and a metastable Zn 7 In 2 O 10 phases. • Increasing precursor molarity reduced sheet resistance of In-doped ZnO thin films

  10. Hall effect measurement for precise sheet resistance and thickness evaluation of Ruthenium thin films using non-equidistant four-point probes

    Directory of Open Access Journals (Sweden)

    Frederik Westergaard Østerberg

    2018-05-01

    Full Text Available We present a new micro Hall effect measurement method using non-equidistant electrodes. We show theoretically and verify experimentally that it is advantageous to use non-equidistant electrodes for samples with low Hall sheet resistance. We demonstrate the new method by experiments where Hall sheet carrier densities and Hall mobilities of Ruthenium thin films (3-30 nm are determined. The measurements show that it is possible to measure Hall mobilities as low as 1 cm2V−1s−1 with a relative standard deviation of 2-3%. We show a linear relation between measured Hall sheet carrier density and film thickness. Thus, the method can be used to monitor thickness variations of ultra-thin metal films.

  11. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  12. Transparent conducting zinc oxide thin film prepared by off-axis rf ...

    Indian Academy of Sciences (India)

    Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail ...

  13. Optical approach to thermopower and conductivity measurements in thin-film semiconductors

    International Nuclear Information System (INIS)

    Dersch, H.; Amer, N.M.

    1984-01-01

    An optical beam deflection technique is applied to measure the Joule and Peltier heat generated by electric currents through thin-film semiconductors. The method yields a spatially resolved conductivity profile and allows the determination of Peltier coefficients. Results obtained on doped hydrogenated amorphous silicon films are presented

  14. Conduction mechanism in amorphous InGaZnO thin film transistors

    NARCIS (Netherlands)

    Bhoolokam, A.; Nag, M.; Steudel, S.; Genoe, J.; Gelinck, G.; Kadashchuk, A.; Groeseneken, G.; Heremans, P.

    2016-01-01

    We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is

  15. A simple and flexible route to large-area conductive transparent graphene thin-films

    NARCIS (Netherlands)

    Arapov, K.; Goryachev, A.; With, de G.; Friedrich, H.

    2015-01-01

    Solution-processed conductive, flexible and transparent graphene thin films continue drawing attention from science and technology due to their potential for many electrical applications. Here, an up-scalable method for the solution processing of graphite to graphene and further to self-assembled

  16. A. C. conduction behaviour in amorphous WO 3 /CEO 2 thin film ...

    African Journals Online (AJOL)

    A. C. conduction behaviour in amorphous WO3/CEO2 thin film. B Yagoubi, C A Hogarth, A Boukorrt. Abstract. No Abstract. Technologies Avancees Vol. 17 2005: pp. 5-8. Full Text: EMAIL FULL TEXT EMAIL FULL TEXT · DOWNLOAD FULL TEXT DOWNLOAD FULL TEXT · http://dx.doi.org/10.4314/ta.v17i1.18478.

  17. Co-sputtered ZnO:Si thin films as transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

    2012-12-01

    Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

  18. Electrochemical Synthesis of a Microporous Conductive Polymer Based on a Metal-Organic Framework Thin Film

    KAUST Repository

    Lu, Chunjing

    2014-05-22

    A new approach to preparing 3D microporous conductive polymer has been demonstrated in the electrochemical synthesis of a porous polyaniline network with the utilization of a MOF thin film supported on a conducting substrate. The prepared porous polyaniline with well-defined uniform micropores of 0.84 nm exhibits a high BET surface area of 986 m2 g−1 and a high electric conductivity of 0.125 S cm−1 when doped with I2, which is superior to existing porous conducting materials of porous MOFs, CMPs, and COFs.

  19. Facile Synthesis of Ultralong and Thin Copper Nanowires and Its Application to High-Performance Flexible Transparent Conductive Electrodes

    Science.gov (United States)

    Wang, Yaxiong; Liu, Ping; Zeng, Baoqing; Liu, Liming; Yang, Jianjun

    2018-03-01

    A hydrothermal method for synthesizing ultralong and thin copper nanowires (CuNWs) with average diameter of 35 nm and average length of 100 μm is demonstrated in this paper. The concerning raw materials include copric (II) chloride dihydrate (CuCl2·2H2O), octadecylamine (ODA), and ascorbic acid, which are all very cheap and nontoxic. The effect of different reaction time and different molar ratios to the reaction products were researched. The CuNWs prepared by the hydrothermal method were applied to fabricate CuNW transparent conductive electrode (TCE), which exhibited excellent conductivity-transmittance performance with low sheet resistance of 26.23 Ω /\\square and high transparency at 550 nm of 89.06% (excluding Polyethylene terephthalate (PET) substrate). The electrode fabrication process was carried out at room temperature, and there was no need for post-treatment. In order to decrease roughness and protect CuNW TCEs against being oxidized, we fabricated CuNW/poly(methyl methacrylate) (PMMA) hybrid TCEs (HTCEs) using PMMA solution. The CuNW/PMMA HTCEs exhibited low surface roughness and chemical stability as compared with CuNW TCEs.

  20. Transparent conductive zinc oxide basics and applications in thin film solar cells

    CERN Document Server

    Klein, Andreas; Rech, Bernd

    2008-01-01

    Zinc oxide (ZnO) belongs to the class of transparent conducting oxides which can be used as transparent electrodes in electronic devices or heated windows. In this book the material properties of, the deposition technologies for, and applications of zinc oxide in thin film solar cells are described in a comprehensive manner. Structural, morphological, optical and electronic properties of ZnO are treated in this review. The editors and authors of this book are specialists in deposition, analysis and fabrication of thin-film solar cells and especially of ZnO. This book is intended as an overview and a data collection for students, engineers and scientist.

  1. Ionic conductivities of lithium phosphorus oxynitride glasses, polycrystals, and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.; Bates, J.B.; Chakoumakos, B.C.; Sales, B.C.; Kwak, B.S.; Zuhr, R.A. [Oak Ridge National Lab., TN (United States); Robertson, J.D. [Univ. of Kentucky, Lexington, KY (United States). Dept. of Chemistry

    1994-11-01

    Various lithium phosphorus oxynitrides have been prepared in the form of glasses, polycrystals, and thin films. The structures of these compounds were investigated by X-ray and neutron diffraction, X-ray photoelectron spectroscopy (XPS), and high-performance liquid chromatography (HPLC). The ac impedance measurements indicate a significant improvement of ionic conductivity as the result of incorporation of nitrogen into the structure. In the case of polycrystalline Li{sub 2.88}PO{sub 3.73}N{sub 0.14} with the {gamma}-Li{sub 3}PO{sub 4} structure, the conductivity increased by several orders of magnitude on small addition of nitrogen. The highest conductivities in the bulk glasses and thin films were found to be 3.0 {times} 10{sup -7} and 8.9 {times} 10{sup -7} S{center_dot}cm{sup -1} at 25{degrees}C, respectively.

  2. EMHD micro-pumping of a non-conducting shear-thinning fluid under EDL phenomena

    International Nuclear Information System (INIS)

    Gaikwad, Harshad; Borole, Chetan; Basu, Dipankar N.; Mondal, Pranab K.

    2016-01-01

    The Electro-Magneto-Hydrodynamic (EMHD) pumping of a binary fluid system constituted by one non-conducting shear-thinning fluid (top layer) by exploiting the transverse momentum exchange through the interfacial viscous shearing effect from a conducting Newtonian fluid layer (bottom layer) in a microfluidic channel is investigated. An externally applied electric field drives the conducting fluid layer under the influence of an applied magnetic field as well. The study reveals that the volume transport of shear-thinning fluid gets augmented for low magnetic field strength, higher electrical double layer (EDL) effect, low viscosity ratio and moderate potential ratio. It is also established that the volumetric flow rate reduces significantly for the higher magnetic field strength. (author)

  3. Ionic conductivities of lithium phosphorus oxynitride glasses, polycrystals, and thin films

    International Nuclear Information System (INIS)

    Wang, B.; Bates, J.B.; Chakoumakos, B.C.; Sales, B.C.; Kwak, B.S.; Zuhr, R.A.; Robertson, J.D.

    1994-11-01

    Various lithium phosphorus oxynitrides have been prepared in the form of glasses, polycrystals, and thin films. The structures of these compounds were investigated by X-ray and neutron diffraction, X-ray photoelectron spectroscopy (XPS), and high-performance liquid chromatography (HPLC). The ac impedance measurements indicate a significant improvement of ionic conductivity as the result of incorporation of nitrogen into the structure. In the case of polycrystalline Li 2.88 PO 3.73 N 0.14 with the γ-Li 3 PO 4 structure, the conductivity increased by several orders of magnitude on small addition of nitrogen. The highest conductivities in the bulk glasses and thin films were found to be 3.0 x 10 -7 and 8.9 x 10 -7 S·cm -1 at 25 degrees C, respectively

  4. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele

    2015-02-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

  5. The thickness of DLC thin film affects the thermal conduction of HPLED lights

    Science.gov (United States)

    Hsu, Ming Seng; Huang, Jen Wei; Shyu, Feng Lin

    2016-09-01

    Thermal dissipation had an important influence in the quantum effect and life of light emitting diodes (LED) because it enabled heat transfer away from electric devices to the aluminum plate for heat removal. In the industrial processing, the quality of the thermal dissipation was decided by the gumming technique between the PCB and aluminum plate. In this study, we made the ceramic thin films of diamond like carbon (DLC) by vacuum sputtering between the substrate and high power light emitting diodes (HPLED) light to check the influence of heat transfer by DLC thin films. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature of HPLEDs. The X-Ray photoelectron spectroscopy (XPS) patterns revealed that ceramic phases were successfully grown onto the substrate. At the same time, the real work temperatures showed the thickness of DLC thin film coating effectively affected the thermal conduction of HPLEDs.

  6. Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

    International Nuclear Information System (INIS)

    Kim, D J; Gruverman, A; Connell, J G; Seo, S S A

    2016-01-01

    Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO 3 and Pb(Zr,Ti)O 3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO 3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO 3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects. (paper)

  7. Efficient 3D conducting networks built by graphene sheets and carbon nanoparticles for high-performance silicon anode.

    Science.gov (United States)

    Zhou, Xiaosi; Yin, Ya-Xia; Cao, An-Min; Wan, Li-Jun; Guo, Yu-Guo

    2012-05-01

    The utilization of silicon particles as anode materials for lithium-ion batteries is hindered by their low intrinsic electric conductivity and large volume changes during cycling. Here we report a novel Si nanoparticle-carbon nanoparticle/graphene composite, in which the addition of carbon nanoparticles can effectively alleviate the aggregation of Si nanoparticles by separating them from each other, and help graphene sheets build efficient 3D conducting networks for Si nanoparticles. Such Si-C/G composite shows much improved electrochemical properties in terms of specific capacity and cycling performance (ca. 1521 mA h g(-1) at 0.2 C after 200 cycles), as well as a favorable high-rate capability.

  8. Purely hopping conduction in c-axis oriented LiNbO3 thin films

    Science.gov (United States)

    Shandilya, Swati; Tomar, Monika; Sreenivas, K.; Gupta, Vinay

    2009-05-01

    Dielectric constant and ac conductivity of highly c-axis oriented LiNbO3 thin film grown by pulsed laser deposition were studied in a metal-insulator-metal configuration over a wide temperature (200 to 450 K) and frequency (100 Hz to 1 MHz) range. The preferred oriented Al (1%) doped ZnO film with electrical conductivity 1.1×103 Ω-1 cm-1 was deposited for dual purpose: (1) to serve as nucleating center for LiNbO3 crystallites along preferred c-axis growth direction, and (2) to act as a suitable bottom electrode for electrical studies. The room temperature dc conductivity (σdc) of LiNbO3 film was about 5.34×10-10 Ω-1 cm-1 with activation energy ˜0.3 eV, indicating extrinsic conduction. The ac conductivity σac was found to be much higher in comparison to σdc in the low temperature region (300 K), σac shows a weak frequency dependence, whereas dielectric constant exhibits a strong frequency dispersion. The dielectric dispersion data has been discussed in the light of theoretical models based on Debye type mixed conduction and purely hopping conduction. The dominant conduction in c-axis oriented LiNbO3 thin film is attributed to the purely hopping where both σdc and σac arise due to same mechanism.

  9. Mechanics analysis of axisymmetric thin-walled part in warm sheet hydroforming

    Directory of Open Access Journals (Sweden)

    Yang Xiying

    2015-10-01

    Full Text Available To obtain the influence of fluid pressure and temperature on warm hydroforming of 5A06-O aluminum alloy sheet, the unified mechanics equilibrium equations, which take through-thickness normal stress and friction into account, were established in spherical coordinate system. The distribution of through-thickness normal stress in the thickness direction was determined. The relation between through-thickness normal stress and fluid pressure was also analyzed in different regions of cylindrical cup. Based on the method of subtracting one increasing function from another, the constitutive equation of 5A06-O applied to warm hydroforming was established and in a good agreement with uniaxial tensile data. Based on whether the thickness variation was taken into account, two mechanic models were established to do the comparative study. The results for the studied case show that the calculated stress values are pretty close according to the two models and consistent with results of finite element analysis; the thickness distribution in flange computed by the second model conforms to the experimental data. Finally, the influences of fluid pressure on the flange thickness and radial stress were analyzed.

  10. Study of the influence between the strength of antibending of working rolls on the widening during hot rolling of thin sheet metal

    Directory of Open Access Journals (Sweden)

    U. Muhin

    2016-07-01

    Full Text Available Based on the variation principle of Jourdan was developed a mathematical model of the process of widening freely in hot rolling of thin sheet metal. The principle applies to rigid-plastic materials and for the cinematically admissible area of speeds. The developed model allows to study the distribution of the widening on the length of the deformation zone depending on the parameters of the rolling process and sheet metal. Results are obtained, characterizing the size of the widening and effectiveness of the process control on tension at the entrance and exit from the stand. The widening is dependent on the strength of anti bending.

  11. A new composite consisting of electrosynthesized conducting polymers, graphene sheets and biosynthesized gold nanoparticles for biosensing acute lymphoblastic leukemia.

    Science.gov (United States)

    Mazloum-Ardakani, Mohammad; Barazesh, Behnaz; Khoshroo, Alireza; Moshtaghiun, Mohammad; Sheikhha, Mohammad Hasan

    2018-06-01

    In this work we report the synthesis of a stable composite with excellent electrical properties, on the surface of a biosensor. Conductive polymers offer both high electrical conductivity and mechanical strength. Many reports have focused on synthesizing conductive polymers with the aid of high-cost enzymes. In the current work we introduce a novel electrochemical, one-step, facile and cost effective procedure for synthesizing poly (catechol), without using expensive enzymes. The poly (catechol) conductivity was enhanced by modification with graphene sheets and biosynthesized gold nanoparticles. Four different robust methods, DPV, EIS, CV and chronoamperometry, were used to monitor the biosensor modifications. The peak currents of the catechol (an electroactive probe) were linearly related to the logarithm of the concentrations of target DNA in the range 100.0 μM to 10.0 pM, with a detection limit of 1.0 pM for the DNA strand. The current work investigates a new, stable composite consisting of conductive polymers and nanoparticles, which was applied to the detection of acute lymphoblastic leukemia. Copyright © 2018 Elsevier B.V. All rights reserved.

  12. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  13. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  14. Spin-Hall conductivity and electric polarization in metallic thin films

    KAUST Repository

    Wang, Xuhui

    2013-02-21

    We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

  15. Spin-Hall conductivity and electric polarization in metallic thin films

    KAUST Repository

    Wang, Xuhui; Xiao, Jiang; Manchon, Aurelien; Maekawa, Sadamichi

    2013-01-01

    We predict theoretically that when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall conductivity due to the surface scattering and a transverse electric polarization due to the spin-dependent phase shift in the spinor wave functions.

  16. Instabilities of convection patterns in a shear-thinning fluid between plates of finite conductivity

    Science.gov (United States)

    Varé, Thomas; Nouar, Chérif; Métivier, Christel

    2017-10-01

    Rayleigh-Bénard convection in a horizontal layer of a non-Newtonian fluid between slabs of arbitrary thickness and finite thermal conductivity is considered. The first part of the paper deals with the primary bifurcation and the relative stability of convective patterns at threshold. Weakly nonlinear analysis combined with Stuart-Landau equation is used. The competition between squares and rolls, as a function of the shear-thinning degree of the fluid, the slabs' thickness, and the ratio of the thermal conductivity of the slabs to that of the fluid is investigated. Computations of heat transfer coefficients are in agreement with the maximum heat transfer principle. The second part of the paper concerns the stability of the convective patterns toward spatial perturbations and the determination of the band width of the stable wave number in the neighborhood of the critical Rayleigh number. The approach used is based on the Ginzburg-Landau equations. The study of rolls stability shows that: (i) for low shear-thinning effects, the band of stable wave numbers is bounded by zigzag instability and cross-roll instability. Furthermore, the marginal cross-roll stability boundary enlarges with increasing shear-thinning properties; (ii) for high shear-thinning effects, Eckhaus instability becomes more dangerous than cross-roll instability. For square patterns, the wave number selection is always restricted by zigzag instability and by "rectangular Eckhaus" instability. In addition, the width of the stable wave number decreases with increasing shear-thinning effects. Numerical simulations of the planform evolution are also presented to illustrate the different instabilities considered in the paper.

  17. Magnetostriction Increase of Polycrystalline Fe-Al-B Thin Sheets after Thermomechanical Process

    Science.gov (United States)

    Dias, M. B. S.; Fulop, G. O.; Baldan, C. A.; Bormio-Nunes, C.

    2017-12-01

    Magnetostrictive materials are applied in several types of sensors, actuators, and energy harvesting. In particular, for AC devices, thin materials are desired to reduce eddy current losses. It is well known that the magnetostriction of single crystals and textured materials is higher than in polycrystalline ones, however, the cost and manufacture speed are crucial to be used as parts of commercial devices. Therefore, polycrystalline samples are strong candidates for common applications. In this work, (Fe x Al100- x )98.4B1.6 ( x = 86.6, 82 and 79.4) alloys were rolled down to 0.7 mm of thickness and annealed at 1473 K (1200 °C) for 2 hours aiming to reduce the thickness of the samples without deteriorating the magnetic properties. The alloys, even with higher contents of Al, were easily deformed to the thickness of 0.7 mm and this ability is attributed to the presence of the Fe2B phase. After the thermomechanical process, new isotropic recrystallized grains emerged and the longitudinal magnetostriction increased to 75.8, 16.9, and 3.2 pct, achieving 28.3, 28.4, and 28.8 ppm, respectively, for x = 86.6, 82, and 79.4. The piezomagnetic coefficient obtained of 4 nm/A is a suitable actuating sensitivity.

  18. Influence of the Aluminium Alloy Type on Defects Formation in Friction Stir Lap Welding of Thin Sheets

    Directory of Open Access Journals (Sweden)

    M. I. Costa

    Full Text Available Abstract The weldability in Friction Stir Lap Welding (FSLW of heat and non-heat treatable aluminium alloys, the AA6082-T6 and the AA5754-H22 aluminium alloys, respectively, are compared. For both alloys, welds were produced in very thin sheets, using the same welding parameters and procedures, and strong differences in welds morphology were found. The strength of the welds was evaluated by performing tensile-shear tests under monotonic and cyclic loading conditions. As-welded and heat-treated samples of the AA6082- T6 were tested. It was found that the heat-treatable alloy is more sensitive to defects formation, in lap welding, than the non-heat-treatable alloy. The presence of defects has a strong influence on the monotonic and fatigue behaviour of the welds. In spite of this, for very high-applied stresses, the heat-treatable alloy welds perform better in fatigue than the non-heat-treatable alloy welds.

  19. Experimental and numerical determination of critical stress intensity factor of aluminum curved thin sheets under tensile stress

    Energy Technology Data Exchange (ETDEWEB)

    Heidarvand, Majid; Soltani, Naser; Hajializadeh, Farshid [University of Tehran, Tehran (Iran, Islamic Republic of)

    2017-05-15

    We determined the fracture toughness of aluminum curved thin sheets using tensile stress tests and finite element method. We applied Linear elastic fracture mechanics (LEFM) and Feddersen procedure to evaluate stress intensity factor of the samples with central wire-cut cracks and fatigue cracks with different lengths to investigate the notch radius effect. Special fixture design was utilized to establish uniform stress distribution at the crack zone. Less than 9 % difference was found between the wire-cut and the fatigue cracked samples. Since generating central fatigue crack with different lengths required so much effort, wire-cut cracked samples were used to determine critical stress intensity factor. Finite element analysis was also performed on one-quarter of the specimen using both the singular Borsum elements and the regular isoparametric elements to further investigate fracture toughness of the samples. It was observed that the singular elements presented better results than the isoparametric ones. A slight difference was also found between the results obtained from finite element method using singular elements and the experimental results.

  20. Comparison of the Effects of Tool Geometry for Friction Stir Welding Thin Sheet Aluminum Alloys for Aerospace Applications

    Science.gov (United States)

    Merry, Josh; Takeshita, Jennifer; Tweedy, Bryan; Burford, Dwight

    2006-01-01

    In this presentation, the results of a recent study on the effect of pin tool design for friction stir welding thin sheets (0.040") of aluminum alloys 2024 and 7075 are provided. The objective of this study was to investigate and document the effect of tool shoulder and pin diameter, as well as the presence of pin flutes, on the resultant microstructure and mechanical properties at both room temperature and cryogenic temperature. Specifically, the comparison between three tools will include: FSW process load analysis (tool forces required to fabricate the welds), Static Mechanical Properties (ultimate tensile strength, yield strength, and elongation), and Process window documenting the range of parameters that can be used with the three pin tools investigated. All samples were naturally aged for a period greater than 10 days. Prior research has shown 7075 may require post weld heat treatment. Therefore, an additional pair of room temperature and cryogenic temperature samples was post-weld aged to the 7075-T7 condition prior to mechanical testing.

  1. Novel cellulose ester substrates for high performance flat-sheet thin-film composite (TFC) forward osmosis (FO) membranes

    KAUST Repository

    Ong, Rui Chin

    2015-01-01

    A novel hydrophilic cellulose ester with a high intrinsic water permeability and a water partition coefficient was discovered to construct membrane supports for flat-sheet thin film composite (TFC) forward osmosis (FO) membranes for water reuse and seawater desalination with high performance. The performance of TFC-FO membranes prepared from the hydrophilic cellulose ester containing a high degree of OH and a moderate degree of Pr substitutions clearly surpasses those prepared from cellulose esters and other polymers with moderate hydrophilicity. Post-treatments of TFC-FO membranes using sodium dodecyl sulfate (SDS) and glycerol followed by heat treatment further enhance the water flux without compromising the selectivity. Positron annihilation lifetime analyses have confirmed that the SDS/glycerol post-treatment increases the free volume size and fractional free volume of the polyamide selective layer. The newly developed post-treated TFC-FO membranes exhibit a remarkably high water flux up to 90 LMH when the selective layer is oriented towards the draw solution (i.e., PRO mode) using 1. M NaCl as the draw solution and DI water as the feed. For seawater desalination, the membranes display a high water flux up to 35 LMH using a 2. M NaCl draw solution. These water fluxes exceeded the water fluxes achieved by other types of FO membranes reported in literatures. © 2014 Elsevier B.V.

  2. Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

    Science.gov (United States)

    Simpson, Lin Jay

    2013-12-17

    A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

  3. MOCVD growth of transparent conducting Cd2SnO4 thin films

    International Nuclear Information System (INIS)

    Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

    2004-01-01

    The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  4. Measurement of the thermal conductivity of thin insulating anisotropic material with a stationary hot strip method

    International Nuclear Information System (INIS)

    Jannot, Yves; Degiovanni, Alain; Félix, Vincent; Bal, Harouna

    2011-01-01

    This paper presents a method dedicated to the thermal conductivity measurement of thin insulating anisotropic materials. The method is based on three hot-strip-type experiments in which the stationary temperature is measured at the center of the hot strip. A 3D model of the heat transfer in the system is established and simulated to determine the validity of a 2D transfer hypothesis at the center of the hot strip. A simplified 2D model is then developed leading to the definition of a geometrical factor calculable from a polynomial expression. A very simple calculation method enabling the estimation of the directional thermal conductivities from the three stationary temperature measurements and from the geometrical factor is presented. The uncertainties on each conductivity are estimated. The method is then validated by measurements on polyethylene foam and Ayous (anistropic low-density tropical wood); the estimated values of the thermal conductivities are in good agreement with the values estimated using the hot plate and the flash method. The method is finally applied on a thin super-insulating fibrous material for which no other method is able to measure the in-plane conductivity

  5. The Work Softening by Deformation-Induced Disordering and Cold Rolling of 6.5 wt pct Si Steel Thin Sheets

    Science.gov (United States)

    Wang, Xianglong; Li, Haoze; Zhang, Weina; Liu, Zhenyu; Wang, Guodong; Luo, Zhonghan; Zhang, Fengquan

    2016-09-01

    As-cast strip of 6.5 wt pct Si steel was fabricated by twin-roll strip casting. After hot rolling at 1323 K (1050 °C), thin sheets with the thickness of 0.35 mm were produced by warm rolling at 373 K (100 °C) with rolling reductions of 15, 25, 35, 45, 55, and 65 pct. Influence of warm rolling reduction on ductility was investigated by room temperature bending test. The measurement of macro-hardness showed that "work softening" could begin when the warm rolling reduction exceeded 35 pct. The room temperature ductility of the thin sheets gradually increased with the increase of warm rolling reductions, and the plastic deformation during bending began to form when the warm rolling reduction was greater than 45 pct, the 65 pct rolled thin sheet exhibited the maximum plastic deformation of about 0.6 pct during bending at room temperature, with a few small dimples having been observed on the fracture surfaces. B2-ordered domains were formed in the 15, 25, 35, 45, and 55 pct rolled specimens, and their average size decreased with the increase of warm rolling reductions. By contrast, no B2-ordered domain could be found in the 65 pct rolled specimen. It had been observed that large-ordered domains could be split into several small parts by the slip of partial super-dislocations during warm rolling, which led to significant decrease of the order degree to cause the phenomenon of deformation-induced disordering. On the basis of these results, cold rolling schedule was developed to successfully fabricate 0.25-mm-thick sheets with good surface qualities and magnetic properties from warm rolled sheets.

  6. Development of In-plane Thermal Conductivity Calculation Methods in Thin Films

    Directory of Open Access Journals (Sweden)

    A. A. Barinov

    2017-01-01

    Full Text Available The future nanoelectronics development involves using the smaller- -and-smaller-sized circuit components based on the micro- and nanostructures. This causes a growth of the specific heat flows up to 100 W/cm2. Since performance of electronic devices is strongly dependent on the temperature there is a challenge to create the heat transfer models, which take into account the size effect and ensure a reliable estimate of the thermal conductivity. This is one of the crucial tasks for development of new generations of integrated circuits.The paper studies heat transfer processes using the silicon thin films as an example. Thermal conductivity calculations are performed taking into account the influence of the classical size effect in the context of the Sondheimer model based on the solution of the Boltzmann transport equation.The paper, for the first time, presents and considers the influence of various factors on the thermal conductivity of thin films, namely temperature, film thickness, polarization of the phonon waves (transverse and longitudinal, velocity and relaxation time versus frequency for the phonons of different wave types.Based on the analysis, three models with different accuracy are created to estimate the influence of detailing processes under consideration on the thermal conductivity in a wide range of temperatures (from 10 K to 450 К and film thickness (from 10 nm to 100 µm.So in the model I for the first time in calculating thermal conductivity of thin films we properly and circumstantially take into account the dependence of the velocity and the relaxation time of phonons on the frequency and polarization. The obtained values are in a good agreement with available experimental data and theoretical models of other authors. In the following models we use few average methods for relaxation times and velocities, which leads to significant reduction in calculating accuracy up to the values exceeding 100%.Therefore, when calculating

  7. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    International Nuclear Information System (INIS)

    Mohd Ali, N I; Misran, N; Mansor, M F; Jamlos, M F

    2017-01-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified. (paper)

  8. Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

    Science.gov (United States)

    Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

    2017-05-01

    This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

  9. Modelling and optimization of cut quality during pulsed Nd:YAG laser cutting of thin Al-alloy sheet for straight profile

    Science.gov (United States)

    Sharma, Amit; Yadava, Vinod

    2012-02-01

    Thin sheets of aluminium alloys are widely used in aerospace and automotive industries for specific applications. Nd:YAG laser beam cutting is one of the most promising sheetmetal cutting process for cutting sheets for any profile. Al-alloy sheets are difficult to cut by laser beam because of its highly reflective nature. This paper presents modelling and optimization of cut quality during pulsed Nd:YAG laser cutting of thin Al-alloy sheet for straight profile. In the present study, four input process parameters such as oxygen pressure, pulse width, pulse frequency, and cutting speed and two output parameters such as average kerf taper ( Ta) and average surface roughness ( Ra) are considered. The hybrid approach comprising of Taguchi methodology (TM) and response surface methodology (RSM) is used for modelling whereas multi-objective optimization is performed using hybrid approach of TM and grey relational analysis (GRA) coupled with entropy measurement methodology. The entropy measurement methodology is employed for the calculation of weight corresponding to each quality characteristic. The results indicate that the hybrid approaches applied for modelling and optimization of the LBC process are reasonable.

  10. Effect of Annealing on Mechanical Properties and Formability of Cold Rolled Thin Sheets of Fe-P P/M Alloys

    Science.gov (United States)

    Trivedi, Shefali; Ravi Kumar, D.; Aravindan, S.

    2016-10-01

    Phosphorus in steel is known to increase strength and hardness and decrease ductility. Higher phosphorus content (more than 0.05%), however, promotes brittle behavior due to segregation of Fe3P along the grain boundaries which makes further mechanical working of these alloys difficult. In this work, thin sheets of Fe-P alloys (with phosphorus in range of 0.1-0.35%) have been developed through processing by powder metallurgy followed by hot rolling and cold rolling. The effect of phosphorus content and annealing parameters (temperature and time) on microstructure, mechanical properties, formability in biaxial stretching and fracture behavior of the cold rolled and annealed sheets has been studied. A comparison has also been made between the properties of the sheets made through P/M route and the conventional cast route with similar phosphorus content. It has been shown that thin sheets of Fe-P alloys with phosphorous up to 0.35% possessing a good combination of strength and formability can be produced through rolling of billets of these alloys made through powder metallurgy technique without the problem of segregation.

  11. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ledinsky, Martin; Fejfar, Antonin; Vetushka, Aliaksei; Stuchlik, Jiri; Rezek, Bohuslav; Kocka, Jan [Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i. Cukrovarnicka 10, 162 00 Praha 6 (Czech Republic)

    2011-11-15

    Local currents measured under standard conductive atomic force microscopy (C-AFM) conditions on microcrystalline silicon ({mu}c-Si:H) thin films were studied. It was shown that the AFM detection diode illuminating the AFM cantilever (see the figure on the right side) 100 x enhanced the current flows through the photosensitive {mu}c-Si:H layer. The local current map and current-voltage characteristics were measured under dark conditions. This study enables mapping of both the dark current and photocurrent. C-AFM cantilever illuminated by the detection diode during measurement on {mu}c-Si:H thin film. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Conductivity behavior of very thin gold films ruptured by mass transport in photosensitive polymer film

    Energy Technology Data Exchange (ETDEWEB)

    Linde, Felix; Sekhar Yadavalli, Nataraja; Santer, Svetlana [Department of Experimental Physics, Institute for Physics and Astronomy, University of Potsdam, 14476 Potsdam (Germany)

    2013-12-16

    We report on conductivity behavior of very thin gold layer deposited on a photosensitive polymer film. Under irradiation with light interference pattern, the azobenzene containing photosensitive polymer film undergoes deformation at which topography follows a distribution of intensity, resulting in the formation of a surface relief grating. This process is accompanied by a change in the shape of the polymer surface from flat to sinusoidal together with a corresponding increase in surface area. The gold layer placed above deforms along with the polymer and ruptures at a strain of 4%. The rupturing is spatially well defined, occurring at the topographic maxima and minima resulting in periodic cracks across the whole irradiated area. We have shown that this periodic micro-rupturing of a thin metal film has no significant impact on the electrical conductivity of the films. We suggest a model to explain this phenomenon and support this by additional experiments where the conductivity is measured in a process when a single nanoscopic scratch is formed with an AFM tip. Our results indicate that in flexible electronic materials consisting of a polymer support and an integrated metal circuit, nano- and micro cracks do not alter significantly the behavior of the conductivity unless the metal is disrupted completely.

  13. The measurement of conductivity of copper indium disulphide thin films against temperature and thickness

    International Nuclear Information System (INIS)

    Yussof Wahab; Roslinda Zainal; Samsudi Sakrani

    1996-01-01

    Ternary semiconductor copper indium disulphide (CuInS sub 2) thin films have been prepared by thermal evaporation. Three stacked layers of film starting with copper, indium and finally sulphur was deposited on glass substrate in the thickness ratio of 1: 1: I0. The films were then annealed in carbon block by method known as encapsulated sulphurization at 350 degree C for 4 hours. The XRD analysis for four samples of thickness of 449.5, 586, 612 and 654 nm showed that stoichiometric CuInS sub 2, were formed at this annealing condition. The electrical conductivity of CuInS sub 2 thin films were measured against temperature from 150K to 300K. The conductivity values were between 76.6 Sm sup -1 to 631.26 Sm sup -1 and the result showed that it increase exponentially with temperature for the above temperature range. The resulting activation energies were found to be in the range 0.05 to 0.08 eV. This suggested that hopping mechanism predominant to the conducting process. It also found that the conductivity decreased with increasing film thickness

  14. Fabrication of micro-channel arrays on thin metallic sheet using internal fluid pressure: Investigations on size effects and development of design guidelines

    Energy Technology Data Exchange (ETDEWEB)

    Mahabunphachai, Sasawat [NSF I/UCR Center for Precision Forming, Department of Mechanical Engineering, Virginia Commonwealth University, Richmond, VA 23284 (United States); Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Koc, Muammer [NSF I/UCR Center for Precision Forming, Department of Mechanical Engineering, Virginia Commonwealth University, Richmond, VA 23284 (United States)

    2008-01-03

    Micro-feature (channel, protrusion, cavity, etc.) arrays on large area-thin metallic sheet alloys are increasingly needed for compact and integrated heat/mass transfer applications (such as fuel cells and fuel processors) that require high temperature resistance, corrosion resistance, good electrical/thermal conductivity, etc. The performance of these micro-feature arrays mainly affects the volume flow velocity of the reactants inside the arrays which directly controls the rate of convection mass/heat transport. The key factors that affect the flow velocity include channel size and shape, flow field pattern, flow path length, fluid pressure, etc. In this study, we investigated these micro-feature arrays from the manufacturability perspective since it is also an important factor to be considered in the design process. Internal fluid pressure (hydroforming) technique is investigated in this study with the specific goals to, first, understand if the so-called ''size effects'' (grain vs. feature size) are effective on the manufacturability of thin metallic sheet into micro-channels, and second, to establish design guidelines for the micro-channel hydroforming technique for robust mass production conditions. Thin stainless steel 304 blanks of 0.051 mm thick with three different grain sizes of 9.3, 10.6, and 17.0 {mu}m were used in hydroforming experiments to form micro-channels with the dimensions between 0.46-1.33 and 0.15-0.98 mm in width and height, respectively. Based on the experimental results, the effect of the grain size on the channel formability was found to be insignificant for the grain size range used in this study. On the other hand, the effect of the channel (feature) size was shown to dominate the overall formability. In addition, FE models of the process were developed and validated with the experimental results, then used to conduct a parametric study to establish micro-channel design guidelines. The results from the parametric

  15. Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

    International Nuclear Information System (INIS)

    Lutsishin, P.P.; Nakhodkin, T.N.

    1982-01-01

    The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

  16. Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

    Energy Technology Data Exchange (ETDEWEB)

    Muhunthan, N.; Singh, Om Pal [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India); Toutam, Vijaykumar, E-mail: toutamvk@nplindia.org [Quantum Phenomena and Applications Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N., E-mail: singhvn@nplindia.org [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India)

    2015-10-15

    Graphical abstract: Experimental setup for conducting AFM (C-AFM). - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film was grown by reactive co-sputtering. • The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy. • C-AFM current flow mainly through grain boundaries rather than grain interiors. • SKPM indicated higher potential along the GBs compared to grain interiors. • The SCM explains that charge separation takes place at the interface of grain and grain boundary. - Abstract: Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.

  17. Characterization of a new transparent-conducting material of ZnO doped ITO thin films

    Science.gov (United States)

    Ali, H. M.

    2005-11-01

    Thin films of indium tin oxide (ITO) doped with zinc oxide have the remarkable properties of being conductive yet still highly transparent in the visible and near-IR spectral ranges. The Electron beam deposi- tion technique is one of the simplest and least expensive ways of preparing. High-quality ITO thin films have been deposited on glass substrates by Electron beam evaporation technique. The effect of doping and substrate deposition temperature was found to have a significant effect on the structure, electrical and optical properties of ZnO doped ITO films. The average optical transmittance has been increased with in- creasing the substrate temperature. The maximum value of transmittance is greater than 84% in the visible region and 85% in the NIR region obtained for film with Zn/ITO = 0.13 at substrate temperature 200 °C. The dielectric constant, average excitation energy for electronic transitions (E o), the dispersion energy (E d), the long wavelength refractive index (n ), average oscillator wave length ( o) and oscillator strength S o for the thin films were determined and presented in this work.

  18. Mesoscopic layered structure in conducting polymer thin film fabricated by potential-programmed electropolymerization

    Energy Technology Data Exchange (ETDEWEB)

    Fujitsuka, Mamoru (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Nakahara, Reiko (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Iyoda, Tomokazu (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Shimidzu, Takeo (Div. of Molecular Engineering, Kyoto Univ. (Japan)); Tomita, Shigehisa (Toray Research Center Co., Ltd., Shiga (Japan)); Hatano, Yayoi (Toray Research Center Co., Ltd., Shiga (Japan)); Soeda, Fusami (Toray Research Center Co., Ltd., Shiga (Japan)); Ishitani, Akira (Toray Research Center Co., Ltd., Shiga (Japan)); Tsuchiya, Hajime (Nitto Technical Information Center Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan)); Ohtani, Akira (Central Research Lab., Nitto Denko Co., Ltd., Shimohozumi Ibaraki, Osaka (Japan))

    1992-11-01

    Mesoscopic layered structures in conducting polymer thin films are fabricated by the potential-programmed electropolymerization method. High lateral quality in the layered structure is realized by the improvement of polymerization conditions, i.e., a mixture of pyrrole and bithiophene as monomers, a silicon single-crystal wafer as a working electrode and propylene carbonate as a solvent. SIMS depth profiling of the resulting layered films indicates a significant linear correlation between the electric charge passed and the thickness of the individual layers on a 100 A scale. (orig.)

  19. Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

    International Nuclear Information System (INIS)

    Carreras, Paz; Antony, Aldrin; Rojas, Fredy; Bertomeu, Joan

    2011-01-01

    Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn–In–Sn–O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 −4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

  20. DLC and AlN thin films influence the thermal conduction of HPLED light

    Science.gov (United States)

    Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

    2015-08-01

    Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

  1. Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

    Science.gov (United States)

    Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2017-07-10

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

  2. Effect of nitrogen doping on the thermal conductivity of GeTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fallica, Roberto; Longo, Massimo; Wiemer, Claudia [Laboratorio MDM, IMM-CNR, Agrate Brianza (Italy); Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona [Micron Semiconductor Italia, Agrate Brianza (Italy)

    2013-12-15

    The 3{omega} method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (-25%) than in the crystalline one (-40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO{sub 2}, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Pulsed EM Field Response of a Thin, High-Contrast, Finely Layered Structure With Dielectric and Conductive Properties

    NARCIS (Netherlands)

    De Hoop, A.T.; Jiang, L.

    2009-01-01

    The response of a thin, high-contrast, finely layered structure with dielectric and conductive properties to an incident, pulsed, electromagnetic field is investigated theoretically. The fine layering causes the standard spatial discretization techniques to solve Maxwell's equations numerically to

  4. Exploration of a possible cause of magnetic reconfiguration/reconnection due to generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet

    Science.gov (United States)

    Huang, Y. C.; Lyu, L. H.

    2014-12-01

    Magnetic reconfiguration/reconnection plays an important role on energy and plasma transport in the space plasma. It is known that magnetic field lines on two sides of a tangential discontinuity can connect to each other only at a neutral point, where the strength of the magnetic field is equal to zero. Thus, the standard reconnection picture with magnetic field lines intersecting at the neutral point is not applicable to the component reconnection events observed at the magnetopause and in the solar corona. In our early study (Yu, Lyu, & Wu, 2011), we have shown that annihilation of magnetic field near a thin current sheet can lead to the formation of normal magnetic field component (normal to the current sheet) to break the frozen-in condition and to accelerate the reconnected plasma flux, even without the presence of a neutral point. In this study, we examine whether or not a generation, rather than annihilation, of magnetic field in a nun-uniform thin current sheet can also lead to reconnection of plasma flux. Our results indicate that a non-uniform enhancement of electric current can yield formation of field-aligned currents. The normal-component magnetic field generated by the field-aligned currents can yield reconnection of plasma flux just outside the current-enhancement region. The particle motion that can lead to non-uniform enhancement of electric currents will be discussed.

  5. Mesoporous tin-doped indium oxide thin films: effect of mesostructure on electrical conductivity

    Directory of Open Access Journals (Sweden)

    Till von Graberg, Pascal Hartmann, Alexander Rein, Silvia Gross, Britta Seelandt, Cornelia Röger, Roman Zieba, Alexander Traut, Michael Wark, Jürgen Janek and Bernd M Smarsly

    2011-01-01

    Full Text Available We present a versatile method for the preparation of mesoporous tin-doped indium oxide (ITO thin films via dip-coating. Two poly(isobutylene-b-poly(ethyleneoxide (PIB-PEO copolymers of significantly different molecular weight (denoted as PIB-PEO 3000 and PIB-PEO 20000 are used as templates and are compared with non-templated films to clarify the effect of the template size on the crystallization and, thus, on the electrochemical properties of mesoporous ITO films. Transparent, mesoporous, conductive coatings are obtained after annealing at 500 °C; these coatings have a specific resistance of 0.5 Ω cm at a thickness of about 100 nm. Electrical conductivity is improved by one order of magnitude by annealing under a reducing atmosphere. The two types of PIB-PEO block copolymers create mesopores with in-plane diameters of 20–25 and 35–45 nm, the latter also possessing correspondingly thicker pore walls. Impedance measurements reveal that the conductivity is significantly higher for films prepared with the template generating larger mesopores. Because of the same size of the primary nanoparticles, the enhanced conductivity is attributed to a higher conduction path cross section. Prussian blue was deposited electrochemically within the films, thus confirming the accessibility of their pores and their functionality as electrode material.

  6. n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

    Science.gov (United States)

    Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

    2018-03-01

    We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

  7. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    International Nuclear Information System (INIS)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Jeong, Heejun; Song, Chulgi

    2009-01-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2 ) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO 2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm −1 ) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm −1 ). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV

  8. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    Science.gov (United States)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

    2009-11-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

  9. Evaluation of thin discontinuities in planar conducting materials using the diffraction of electromagnetic field

    Science.gov (United States)

    Savin, A.; Novy, F.; Fintova, S.; Steigmann, R.

    2017-08-01

    The current stage of nondestructive evaluation techniques imposes the development of new electromagnetic (EM) methods that are based on high spatial resolution and increased sensitivity. In order to achieve high performance, the work frequencies must be either radifrequencies or microwaves. At these frequencies, at the dielectric/conductor interface, plasmon polaritons can appear, propagating between conductive regions as evanescent waves. In order to use the evanescent wave that can appear even if the slits width is much smaller that the wavwelength of incident EM wave, a sensor with metamaterial (MM) is used. The study of the EM field diffraction against the edge of long thin discontinuity placed under the inspected surface of a conductive plate has been performed using the geometrical optics principles. This type of sensor having the reception coils shielded by a conductive screen with a circular aperture placed in the front of reception coil of emission reception sensor has been developed and “transported” information for obtaining of magnified image of the conductive structures inspected. This work presents a sensor, using MM conical Swiss roll type that allows the propagation of evanescent waves and the electromagnetic images are magnified. The test method can be successfully applied in a variety of applications of maxim importance such as defect/damage detection in materials used in automotive and aviation technologies. Applying this testing method, spatial resolution can be improved.

  10. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  11. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    CERN Document Server

    Barbosa, M B; Redondo-Cubero, A; Miranda, S M C; Simon, R; Kessler, P; Brandt, M; Henneberger, F; Nogales, E; Méndez, B; Johnston, K; Alves, E; Vianden, R; Araújo, J P; Lorenz, K; Correia, J G

    2013-01-01

    The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/Cd$_x$Zn$_{1-x}$O thin films and Ga$_2$O$_3$ powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of $^{111m}$Cd$/^{111}$Cd (T$_{1/2}$=48$\\,$min.) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe-defect complex. The ternary Cd$_x$Zn$_{1-x}$O (x=0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga$_2$O$_3$ samples, the substitution of the Cd probes in the octahedral Ga-site was observed, demonstrating the potential of ion-implantation for the doping of nanowires.

  12. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    International Nuclear Information System (INIS)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C.N.; Mihailescu, I.N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A.C.; Luculescu, C.R.; Craciun, V.

    2012-01-01

    Highlights: ► TCO thin films were grown by PLD on PET substrate at low temperature. ► We found that the quality of TCO on PET substrate depends on the target–substrate distance. ► TCO with high transparency (>95%) and reduced electrical resistivity (∼5 × 10 −4 Ω cm) were obtained. ► Optimized TCO films deposited on PET were free of any cracks. - Abstract: The influence of target–substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10 −4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  13. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  14. Transparent conducting thin films by co-sputtering of ZnO-ITO targets

    Energy Technology Data Exchange (ETDEWEB)

    Carreras, Paz; Antony, Aldrin; Roldan, Ruben; Nos, Oriol; Frigeri, Paolo Antonio; Asensi, Jose Miguel; Bertomeu, Joan [Grup d' Energia Solar, Universitat de Barcelona (Spain)

    2010-04-15

    Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67% as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  16. Thin sensing layer based on semi-conducting β-cyclodextrin rotaxane for toxic metals detection

    Energy Technology Data Exchange (ETDEWEB)

    Teka, S.; Gaied, A.; Jaballah, N. [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Université de Monastir, Faculté des Sciences de Monastir, Bd. de l' Environnement, 5019 Monastir (Tunisia); Xiaonan, S. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086 CNRS, 15 rue J-A de Baı̈ f, 75205 Paris Cedex 13 (France); Majdoub, M., E-mail: mustapha.majdoub@fsm.rnu.tn [Laboratoire des Interfaces et Matériaux Avancés (LIMA), Université de Monastir, Faculté des Sciences de Monastir, Bd. de l' Environnement, 5019 Monastir (Tunisia)

    2016-02-15

    Highlights: • Microwave-assisted synthesis of rotaxane based on anthracene and β-cyclodextrin. • Morphological and optical characterization of thin solid film. • Elaboration of impedimetric gold/rotaxane sensor. • Investigation of the membrane sensitivity towards Hg{sup 2+}, Cu{sup 2+} and Pb{sup 2+} cations. - Abstract: An impedimetric sensor based on a new semi-conducting rotaxane has been described for detection of toxic cations. The rotaxane, consists on a π-conjugated material encapsulated into β-cyclodextrin (β-CD); it has been synthesized via the Williamson reaction under microwaves irradiation. The supramolecular structure of the compound was confirmed by NMR and FT-IR spectroscopies. A thin solid film of the rotaxane was deposited by spin-coating to develop a new electrochemical sensor. The morphological properties of the organic membrane were evaluated using contact angle measurements and atomic force microscopy. The gold/rotaxane/solution interfaces were investigated by electrochemical impedance spectroscopy and the obtained data were fitted using an equivalent electrical circuit. The response of the gold/rotaxane membrane towards Hg{sup 2+}, Cu{sup 2+} and Pb{sup 2+} cations was studied and the results showed a good sensitivity to the mercury cations.

  17. Experimental study of nonlinear interaction of plasma flow with charged thin current sheets: 2. Hall dynamics, mass and momentum transfer

    Directory of Open Access Journals (Sweden)

    S. Savin

    2006-01-01

    Full Text Available Proceeding with the analysis of Amata et al. (2005, we suggest that the general feature for the local transport at a thin magnetopause (MP consists of the penetration of ions from the magnetosheath with gyroradius larger than the MP width, and that, in crossing it, the transverse potential difference at the thin current sheet (TCS is acquired by these ions, providing a field-particle energy exchange without parallel electric fields. It is suggested that a part of the surface charge is self-consistently produced by deflection of ions in the course of inertial drift in the non-uniform electric field at MP. Consideration of the partial moments of ions with different energies demonstrates that the protons having gyroradii of roughly the same size or larger than the MP width carry fluxes normal to MP that are about 20% of the total flow in the plasma jet under MP. This is close to the excess of the ion transverse velocity over the cross-field drift speed in the plasma flow just inside MP (Amata et al., 2005, which conforms to the contribution of the finite-gyroradius inflow across MP. A linkage through the TCS between different plasmas results from the momentum conservation of the higher-energy ions. If the finite-gyroradius penetration occurs along the MP over ~1.5 RE from the observation site, then it can completely account for the formation of the jet under the MP. To provide the downstream acceleration of the flow near the MP via the cross-field drift, the weak magnetic field is suggested to rotate from its nearly parallel direction to the unperturbed flow toward being almost perpendicular to the accelerated flow near the MP. We discuss a deceleration of the higher-energy ions in the MP normal direction due to the interaction with finite-scale electric field bursts in the magnetosheath flow frame, equivalent to collisions, providing a charge separation. These effective collisions, with a nonlinear frequency proxy of the order of the proton

  18. Pulsed laser deposition of transparent conductive oxide thin films on flexible substrates

    Science.gov (United States)

    Socol, G.; Socol, M.; Stefan, N.; Axente, E.; Popescu-Pelin, G.; Craciun, D.; Duta, L.; Mihailescu, C. N.; Mihailescu, I. N.; Stanculescu, A.; Visan, D.; Sava, V.; Galca, A. C.; Luculescu, C. R.; Craciun, V.

    2012-11-01

    The influence of target-substrate distance during pulsed laser deposition of indium zinc oxide (IZO), indium tin oxide (ITO) and aluminium-doped zinc oxide (AZO) thin films grown on polyethylene terephthalate (PET) substrates was investigated. It was found that the properties of such flexible transparent conductive oxide (TCO)/PET electrodes critically depend on this parameter. The TCO films that were deposited at distances of 6 and 8 cm exhibited an optical transmittance higher than 90% in the visible range and electrical resistivities around 5 × 10-4 Ω cm. In addition to these excellent electrical and optical characteristics the films grown at 8 cm distance were homogenous, smooth, adherent, and without cracks or any other extended defects, being suitable for opto-electronic device applications.

  19. Highly conducting p-type nanocrystalline silicon thin films preparation without additional hydrogen dilution

    Science.gov (United States)

    Patra, Chandralina; Das, Debajyoti

    2018-04-01

    Boron doped nanocrystalline silicon thin film has been successfully prepared at a low substrate temperature (250 °C) in planar inductively coupled RF (13.56 MHz) plasma CVD, without any additional hydrogen dilution. The effect of B2H6 flow rate on structural and electrical properties of the films has been studied. The p-type nc-Si:H films prepared at 5 ≤ B2H6 (sccm) ≤ 20 retains considerable amount of nanocrystallites (˜80 %) with high conductivity ˜101 S cm-1 and dominant crystallographic orientation which has been correlated with the associated increased ultra- nanocrystalline component in the network. Such properties together make the material significantly effective for utilization as p-type emitter layer in heterojunction nc-Si solar cells.

  20. Hall conductivity and the vortex phase in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W K; Huh, Ji Young; Lee, T G; Kang, W N; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik

    2007-01-01

    In a MgB 2 thin film superconductor, we have found that Hall conductivity (σ xy ) is described by the sum of two terms, σ xy = C 1 /H+C 3 H, where C 1 and C 3 are independent of the magnetic fields and have positive values. C 1 is observed to be proportional to (1-t) n with n = 4.2, where t is the reduced temperature (T/T c ), and C 3 is weakly dependent on the temperature. These results are consistent with those of the overdoped La 2-x Sr x CuO 4 superconductors. Based on Hall angle data, we obtained a vortex phase diagram with three regions, vortex-solid, crossover, and vortex-liquid regions in the H-T plane

  1. Across plane ionic conductivity of highly oriented neodymium doped ceria thin films.

    Science.gov (United States)

    Baure, G; Kasse, R M; Rudawski, N G; Nino, J C

    2015-05-14

    A methodology to limit interfacial effects in thin films is proposed and explained. The strategy is to reduce the impact of the electrode interfaces and eliminate cross grain boundaries that impede ionic motion. To this end, highly oriented Nd0.1Ce0.9O2-δ (NDC) nanocrystalline thin films were grown using pulsed laser deposition (PLD) on platinized single crystal a-plane sapphire substrates. High resolution cross-sectional transmission electron microscopy (HR-XTEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) verified the films were textured with columnar grains. The average widths of the columns were approximately 40 nm and not significantly changed by film thickness between 100 and 300 nm. HR-XTEM and XRD determined the {111} planes of NDC were grown preferentially on top of the {111} planes of platinum despite the large lattice mismatch between the two planes. From the XRD patterns, the out of plane strains on the platinum and NDC layers were less than 1%. This can be explained by the coincident site lattice (CSL) theory. Rotating the {111} ceria planes 19.11° with respect to the {111} platinum planes forms a Σ7 boundary where 1 in 7 cerium lattice sites are coincident with the platinum lattice sites. This orientation lowers interfacial energy promoting the preferential alignment of those two planes. The across plane ionic conductivity was measured at low temperatures (<350 °C) for the various film thicknesses. It is here shown that columnar grain growth of ceria can be induced on platinized substrates allowing pathways that are clear of blocking grain boundaries that cause conductivities to diminish as film thickness decreases.

  2. Homotopy Perturbation Method for Thin Film Flow and Heat Transfer over an Unsteady Stretching Sheet with Internal Heating and Variable Heat Flux

    Directory of Open Access Journals (Sweden)

    I-Chung Liu

    2012-01-01

    Full Text Available We have analyzed the effects of variable heat flux and internal heat generation on the flow and heat transfer in a thin film on a horizontal sheet in the presence of thermal radiation. Similarity transformations are used to transform the governing equations to a set of coupled nonlinear ordinary differential equations. The obtained differential equations are solved approximately by the homotopy perturbation method (HPM. The effects of various parameters governing the flow and heat transfer in this study are discussed and presented graphically. Comparison of numerical results is made with the earlier published results under limiting cases.

  3. Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

    2017-02-15

    Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

  4. Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation.

    Science.gov (United States)

    Vergara, José; Favieres, Cristina; Magén, César; de Teresa, José María; Ibarra, Manuel Ricardo; Madurga, Vicente

    2017-12-05

    We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM). Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

  5. Structurally Oriented Nano-Sheets in Co Thin Films: Changing Their Anisotropic Physical Properties by Thermally-Induced Relaxation

    Directory of Open Access Journals (Sweden)

    José Vergara

    2017-12-01

    Full Text Available We show how nanocrystalline Co films formed by separated oblique nano-sheets display anisotropy in their resistivity, magnetization process, surface nano-morphology and optical transmission. After performing a heat treatment at 270 °C, these anisotropies decrease. This loss has been monitored measuring the resistivity as a function of temperature. The resistivity measured parallel to the direction of the nano-sheets has been constant up to 270 °C, but it decreases when measured perpendicular to the nano-sheets. This suggests the existence of a structural relaxation, which produces the change of the Co nano-sheets during annealing. The changes in the nano-morphology and the local chemical composition of the films at the nanoscale after heating above 270 °C have been analysed by scanning transmission electron microscopy (STEM. Thus, an approach and coalescence of the nano-sheets have been directly visualized. The spectrum of activation energies of this structural relaxation has indicated that the coalescence of the nano-sheets has taken place between 1.2 and 1.7 eV. In addition, an increase in the size of the nano-crystals has occurred in the samples annealed at 400 °C. This study may be relevant for the application in devices working, for example, in the GHz range and to achieve the retention of the anisotropy of these films at higher temperatures.

  6. 3D polyaniline porous layer anchored pillared graphene sheets: enhanced interface joined with high conductivity for better charge storage applications.

    Science.gov (United States)

    Sekar, Pandiaraj; Anothumakkool, Bihag; Kurungot, Sreekumar

    2015-04-15

    Here, we report synthesis of a 3-dimensional (3D) porous polyaniline (PANI) anchored on pillared graphene (G-PANI-PA) as an efficient charge storage material for supercapacitor applications. Benzoic acid (BA) anchored graphene, having spatially separated graphene layers (G-Bz-COOH), was used as a structure controlling support whereas 3D PANI growth has been achieved by a simple chemical oxidation of aniline in the presence of phytic acid (PA). The BA groups on G-Bz-COOH play a critical role in preventing the restacking of graphene to achieve a high surface area of 472 m(2)/g compared to reduced graphene oxide (RGO, 290 m(2)/g). The carboxylic acid (-COOH) group controls the rate of polymerization to achieve a compact polymer structure with micropores whereas the chelating nature of PA plays a crucial role to achieve the 3D growth pattern of PANI. This type of controlled interplay helps G-PANI-PA to achieve a high conductivity of 3.74 S/cm all the while maintaining a high surface area of 330 m(2)/g compared to PANI-PA (0.4 S/cm and 60 m(2)/g). G-PANI-PA thus conceives the characteristics required for facile charge mobility during fast charge-discharge cycles, which results in a high specific capacitance of 652 F/g for the composite. Owing to the high surface area along with high conductivity, G-PANI-PA displays a stable specific capacitance of 547 F/g even with a high mass loading of 3 mg/cm(2), an enhanced areal capacitance of 1.52 F/cm(2), and a volumetric capacitance of 122 F/cm(3). The reduced charge-transfer resistance (RCT) of 0.67 Ω displayed by G-PANI-PA compared to pure PANI (0.79 Ω) stands out as valid evidence of the improved charge mobility achieved by the system by growing the 3D PANI layer along the spatially separated layers of the graphene sheets. The low RCT helps the system to display capacitance retention as high as 65% even under a high current dragging condition of 10 A/g. High charge/discharge rates and good cycling stability are the other

  7. Metal-insulator transition in tin doped indium oxide (ITO thin films: Quantum correction to the electrical conductivity

    Directory of Open Access Journals (Sweden)

    Deepak Kumar Kaushik

    2017-01-01

    Full Text Available Tin doped indium oxide (ITO thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes in low temperatures (25-300 K. The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l is the electron mean free path and degenerate semiconductors. The transport of charge carriers (electrons in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known ‘metal-insulator transition’ (MIT which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC; this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann’s expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  8. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    Science.gov (United States)

    Kaushik, Deepak Kumar; Kumar, K. Uday; Subrahmanyam, A.

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl˜1; kF is the Fermi wave vector and l is the electron mean free path) and degenerate semiconductors. The transport of charge carriers (electrons) in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well-known `metal-insulator transition' (MIT) which is observed at 110 K in these ITO thin films. The MIT in ITO thin films is explained by the quantum correction to the conductivity (QCC); this approach is based on the inclusion of quantum-mechanical interference effects in Boltzmann's expression of the conductivity of the disordered systems. The insulating behaviour observed in ITO thin films below the MIT temperature is attributed to the combined effect of the weak localization and the electron-electron interactions.

  9. Optimizing electrical conductivity and optical transparency of IZO thin film deposited by radio frequency (RF) magnetron sputtering

    Science.gov (United States)

    Zhang, Lei

    Transparent conducting oxide (TCO) thin films of In2O3, SnO2, ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in solar photovoltaic devices. In this project I deposited amorphous indium-zinc oxide (IZO) thin films by radio frequency (RF) magnetron sputtering from a In2O3-10 wt.% ZnO sintered ceramic target to optimize the RF power, argon gas flowing rate, and the thickness of film to reach the maximum conductivity and transparency in visible spectrum. The results indicated optimized conductivity and transparency of IZO thin film is closer to ITO's conductivity and transparency, and is even better when the film was deposited with one specific tilted angle. National Science Foundation (NSF) MRSEC program at University of Nebraska Lincoln, and was hosted by Professor Jeff Shields lab.

  10. Space charge limited current conduction in Bi2Te3 thin films

    International Nuclear Information System (INIS)

    Sathyamoorthy, R.; Dheepa, J.; Velumani, S.

    2007-01-01

    Bi 2 Te 3 is known for its large thermoelectric coefficients and is widely used as a material for Peltier devices. Bi 2 Te 3 thin films with thicknesses in the range 125-300 A have been prepared by Flash Evaporation at a pressure of 10 -5 m bar on clean glass substrates at room temperature. An Al-Bi 2 Te 3 -Al sandwich structure has been used for electrical conduction properties in the temperature range 303 to 483 K. I-V characteristics showed Ohmic conduction in the low voltage region. In the higher voltage region, a Space Charge Limited Conduction (SCLC) takes place due to the presence of the trapping level. The transition voltage (V t ), between the Ohmic and the SCLC condition was proportional to the square of thickness. Further evidence for this conduction process was provided by the linear dependence of V t on t 2 and log J on log t. The hole concentration in the films were found to be n 0 = 1.65 * 10 10 m -3 . The carrier mobility increases with increasing temperature whereas the density of trapped charges decreases with increasing temperature. The barrier height decreases with an increase in temperature. The increase in the trapping concentration V t is correlated with ascending the degree of preferred orientation of the highest atomic density plane. The activation energy was estimated and the values found to decrease with increasing applied voltage. The zero field value of the activation energy is found to be 0.4 eV

  11. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  12. Uniaxial stress influence on electrical conductivity of thin epitaxial lanthanum-strontium manganite films

    Energy Technology Data Exchange (ETDEWEB)

    Stankevič, V., E-mail: wstan@pfi.lt [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A.Gostauto 11, Vilnius (Lithuania); Vilnius Gediminas Technical University, Sauletekio 11, Vilnius (Lithuania); Šimkevičius, Č.; Balevičius, S.; Žurauskienė, N. [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A.Gostauto 11, Vilnius (Lithuania); Vilnius Gediminas Technical University, Sauletekio 11, Vilnius (Lithuania); Cimmperman, P. [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A.Gostauto 11, Vilnius (Lithuania); Abrutis, A. [Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, Vilnius (Lithuania); Plaušinaitienė, V. [Center for Physical Sciences and Technology, Semiconductor Physics Institute, A.Gostauto 11, Vilnius (Lithuania); Vilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, Vilnius (Lithuania)

    2013-07-01

    This is a study of the influence of external uniaxial mechanical strains on the transport properties of thin epitaxial La{sub 0.83}Sr{sub 0.17}MnO{sub 3} (LSMO) films. Our measurements were carried out using standard isosceles triangle-shaped cantilever. Films which were tensed in-plane or compressed or were subjected to both tension and compression strains were grown onto SrTiO{sub 3} (STO), LaAlO{sub 3} (LAO) and (001) NdGaO{sub 3} (NGO) substrates, respectively. It was found that for thin films (less than 100 nm), the uniaxial compression of such films which were initially tensed in-plane (grown onto STO substrates) produces a decrease of their resistance, whereas the compression of initially compressed films (on LAO substrates) produces an increase of the films' resistance. The same results were obtained for LSMO films grown onto (001) NGO substrates when they were compressed along the [010] and [100] directions, respectively. For thicker films (more than 100 nm), the resistance behavior after uniaxial compression was found to be identical to that produced by hydrostatic compression, namely, the resistance decreases irrespective of the substrate. These experiments also reveal an increase of resistance and a shift of metal–insulator transition temperature T{sub m} to lower temperatures corresponding to a decrease of the film thickness. The occurrence of this effect is also independent of the kind of substrate used. Thus it was concluded that the influence of film thickness on its resistance as well as on the behavior of such films while under external uniaxial compression cannot be explained fully by only the presence of residual stress in these films. A possible reason is that the inhomogeneous distribution of the mechanical stresses in the films can lead to the appearance of two conductivity phases, each having a different mechanism. The results which were obtained when these films were subjected to hydrostatic compression were also explained by this

  13. Separation of top and bottom surface conduction in Bi2Te3 thin films

    International Nuclear Information System (INIS)

    Yu Xinxin; He Liang; Lang Murong; Jiang Wanjun; Kou Xufeng; Tang Jianshi; Huang Guan; Wang, Kang L; Xiu Faxian; Liao Zhiming; Zou Jin; Wang Yong; Zhang Peng

    2013-01-01

    Quantum spin Hall (QSH) systems are insulating in the bulk with gapless edges or surfaces that are topologically protected and immune to nonmagnetic impurities or geometric perturbations. Although the QSH effect has been realized in the HgTe/CdTe system, it has not been accomplished in normal 3D topological insulators. In this work, we demonstrate a separation of two surface conductions (top/bottom) in epitaxially grown Bi 2 Te 3 thin films through gate dependent Shubnikov–de Haas (SdH) oscillations. By sweeping the gate voltage, only the Fermi level of the top surface is tuned while that of the bottom surface remains unchanged due to strong electric field screening effects arising from the high dielectric constant of Bi 2 Te 3 . In addition, the bulk conduction can be modulated from n- to p-type with a varying gate bias. Our results on the surface control hence pave a way for the realization of QSH effect in topological insulators which requires a selective control of spin transports on the top/bottom surfaces. (paper)

  14. 76 FR 58536 - Tin- and Chromium-Coated Steel Sheet From Japan; Notice of Commission Determination To Conduct a...

    Science.gov (United States)

    2011-09-21

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 731-TA-860 (Second Review)] Tin- and Chromium... Concerning the Antidumping Duty Order on Tin- and Chromium-Coated Steel Sheet From Japan AGENCY: United.... 1675(c)(5)) to determine whether revocation of the antidumping duty order on tin- and chromium-coated...

  15. Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

    2017-03-15

    A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

  16. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  17. Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Haiyan [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Fu, Li, E-mail: fuli@nwpu.edu.cn [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072 (China); Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China); Liang, Pei; Liu, Fenjun [Shaanxi Key Laboratory of Friction Welding Technologies, Northwestern Polytechnical University, Xi' an 710072 (China)

    2017-03-15

    1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

  18. Defect features, texture and mechanical properties of friction stir welded lap joints of 2A97 Al-Li alloy thin sheets

    International Nuclear Information System (INIS)

    Chen, Haiyan; Fu, Li; Liang, Pei; Liu, Fenjun

    2017-01-01

    1.4 mm 2A97 Al-Li alloy thin sheets were welded by friction stir lap welding using the stirring tools with different pin length at different rotational speeds. The influence of pin length and rotational speed on the defect features and mechanical properties of lap joints were investigated in detail. Microstructure observation shows that the hook defect geometry and size mainly varies with the pin length instead of the rotational speed. The size of hook defects on both the advancing side (AS) and the retreating side (RS) increased with increasing the pin length, leading to the effective sheet thickness decreased accordingly. Electron backscatter diffraction analysis reveals that the weld zones, especially the nugget zone (NZ), have the much lower texture intensity than the base metal. Some new texture components are formed in the thermo-mechanical affected zone (TMAZ) and the NZ of joint. Lap shear test results show that the failure load of joints generally decreases with increasing the pin length and the rotational speed. The joints failed during the lap shear tests at three locations: the lap interface, the RS of the top sheet and the AS of the bottom sheet. The fracture locations are mainly determined by the hook defects. - Highlights: • Hook defect size mainly varies with the pin length of stirring tool. • The proportion of LAGBs and substructured grains increases from NZ to TMAZ. • Weld zones, especially the NZ, have the much lower texture intensity than the BM. • Lap shear failure load and fracture location of joints is relative to the hook defects.

  19. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  20. Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors

    Science.gov (United States)

    Lee, Minkyung; Kim, Minho; Jo, Jeong-Wan; Park, Sung Kyu; Kim, Yong-Hoon

    2018-01-01

    This study offers a combinatorial approach for suppressing the persistent photo-conductance (PPC) characteristic in solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) in order to achieve rapid photo-recovery. Various analyses were used to examine the photo-instability of indium-gallium-zinc-oxide (IGZO) TFTs including negative-bias-illumination-stress (NBIS) and transient photo-response behaviors. It was found that the indium ratio in metallic components had a significant impact on their PPC and photo-recovery characteristics. In particular, when the indium ratio was low (51.5%), the PPC characteristic was significantly suppressed and achieving rapid photo-recovery was possible without significantly affecting the electrical performance of AOSs. These results imply that the optimization of the indium composition ratio may allow achieving highly photo-stable and near PPC-free characteristics while maintaining high electrical performance of AOSs. It is considered that the negligible PPC behavior and rapid photo-recovery observed in IGZO TFTs with a lower indium composition are attributed to the less activation energy required for the neutralization of ionized oxygen vacancies.

  1. Influence of heat conducting substrates on explosive crystallization in thin layers

    Science.gov (United States)

    Schneider, Wilhelm

    2017-09-01

    Crystallization in a thin, initially amorphous layer is considered. The layer is in thermal contact with a substrate of very large dimensions. The energy equation of the layer contains source and sink terms. The source term is due to liberation of latent heat in the crystallization process, while the sink term is due to conduction of heat into the substrate. To determine the latter, the heat diffusion equation for the substrate is solved by applying Duhamel's integral. Thus, the energy equation of the layer becomes a heat diffusion equation with a time integral as an additional term. The latter term indicates that the heat loss due to the substrate depends on the history of the process. To complete the set of equations, the crystallization process is described by a rate equation for the degree of crystallization. The governing equations are then transformed to a moving co-ordinate system in order to analyze crystallization waves that propagate with invariant properties. Dual solutions are found by an asymptotic expansion for large activation energies of molecular diffusion. By introducing suitable variables, the results can be presented in a universal form that comprises the influence of all non-dimensional parameters that govern the process. Of particular interest for applications is the prediction of a critical heat loss parameter for the existence of crystallization waves with invariant properties.

  2. Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

    Science.gov (United States)

    Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

    2018-04-01

    Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

  3. Enhanced electrical properties of oxide semiconductor thin-film transistors with high conductivity thin layer insertion for the channel region

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Cam Phu Thi; Raja, Jayapal; Kim, Sunbo; Jang, Kyungsoo; Le, Anh Huy Tuan; Lee, Youn-Jung; Yi, Junsin, E-mail: junsin@skku.edu

    2017-02-28

    Highlights: • The characteristics of thin film transistors using double active layers are examined. • Electrical characteristics have been improved for the double active layers devices. • The total trap density can be decreased by insert-ion of ultrathin ITO film. - Abstract: This study examined the performance and the stability of indium tin zinc oxide (ITZO) thin film transistors (TFTs) by inserting an ultra-thin indium tin oxide (ITO) layer at the active/insulator interface. The electrical properties of the double channel device (ITO thickness of 5 nm) were improved in comparison with the single channel ITZO or ITO devices. The TFT characteristics of the device with an ITO thickness of less than 5 nm were degraded due to the formation of an island-like morphology and the carriers scattering at the active/insulator interface. The 5 nm-thick ITO inserted ITZO TFTs (optimal condition) exhibited a superior field effect mobility (∼95 cm{sup 2}/V·s) compared with the ITZO-only TFTs (∼34 cm{sup 2}/V·s). The best characteristics of the TFT devices with double channel layer are due to the lowest surface roughness (0.14 nm) and contact angle (50.1°) that result in the highest hydrophicility, and the most effective adhesion at the surface. Furthermore, the threshold voltage shifts for the ITO/ITZO double layer device decreased to 0.80 and −2.39 V compared with 6.10 and −6.79 V (for the ITZO only device) under positive and negative bias stress, respectively. The falling rates of E{sub A} were 0.38 eV/V and 0.54 eV/V for the ITZO and ITO/ITZO bi-layer devices, respectively. The faster falling rate of the double channel devices suggests that the trap density, including interface trap and semiconductor bulk trap, can be decreased by the ion insertion of a very thin ITO film into the ITZO/SiO{sub 2} reference device. These results demonstrate that the double active layer TFT can potentially be applied to the flat panel display.

  4. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  5. Conductive polymer/fullerene blend thin films with honeycomb framework for transparent photovoltaic application

    Science.gov (United States)

    Cotlet, Mircea; Wang, Hsing-Lin; Tsai, Hsinhan; Xu, Zhihua

    2015-04-21

    Optoelectronic devices and thin-film semiconductor compositions and methods for making same are disclosed. The methods provide for the synthesis of the disclosed composition. The thin-film semiconductor compositions disclosed herein have a unique configuration that exhibits efficient photo-induced charge transfer and high transparency to visible light.

  6. Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

    OpenAIRE

    Hamdi Muhyuddin D. Barra; Henry J. Ramos

    2011-01-01

    Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The ...

  7. Anomalous Li Storage Capability in Atomically Thin Two-Dimensional Sheets of Nonlayered MoO2

    KAUST Repository

    Xia, Chuan

    2018-02-01

    Since the first exfoliation and identification of graphene in 2004, research on layered ultrathin two-dimensional (2D) nanomaterials has achieved remarkable progress. Realizing the special importance of 2D geometry, we demonstrate that the controlled synthesis of nonlayered nanomaterials in 2D geometry can yield some unique properties that otherwise cannot be achieved in these nonlayered systems. Herein, we report a systematic study involving theoretical and experimental approaches to evaluate the Li-ion storage capability in 2D atomic sheets of nonlayered molybdenum dioxide (MoO2). We develop a novel monomer-assisted reduction process to produce high quality 2D sheets of nonlayered MoO2. When used as lithium-ion battery (LIB) anodes, these ultrathin 2D-MoO2 electrodes demonstrate extraordinary reversible capacity, as high as 1516 mAh g–1 after 100 cycles at the current rate of 100 mA g–1 and 489 mAh g–1 after 1050 cycles at 1000 mA g–1. It is evident that these ultrathin 2D sheets did not follow the normal intercalation-cum-conversion mechanism when used as LIB anodes, which was observed for their bulk analogue. Our ex situ XPS and XRD studies reveal a Li-storage mechanism in these 2D-MoO2 sheets consisting of an intercalation reaction and the formation of metallic Li phase. In addition, the 2D-MoO2 based microsupercapacitors exhibit high areal capacitance (63.1 mF cm–2 at 0.1 mA cm–2), good rate performance (81% retention from 0.1 to 2 mA cm–2), and superior cycle stability (86% retention after 10,000 cycles). We believe that our work identifies a new pathway to make 2D nanostructures from nonlayered compounds, which results in an extremely enhanced energy storage capability.

  8. Prediction of stress- and strain-based forming limits of automotive thin sheets by numerical, theoretical and experimental methods

    Science.gov (United States)

    Béres, Gábor; Weltsch, Zoltán; Lukács, Zsolt; Tisza, Miklós

    2018-05-01

    Forming limit is a complex concept of limit values related to the onset of local necking in the sheet metal. In cold sheet metal forming, major and minor limit strains are influenced by the sheet thickness, strain path (deformation history) as well as material parameters and microstructure. Forming Limit Curves are plotted in ɛ1 - ɛ2 coordinate system providing the classic strain-based Forming Limit Diagram (FLD). Using the appropriate constitutive model, the limit strains can be changed into the stress-based Forming Limit Diagram (SFLD), irrespective of the strain path. This study is about the effect of the hardening model parameters on defining of limit stress values during Nakazima tests for automotive dual phase (DP) steels. Five limit strain pairs were specified experimentally with the loading of five different sheet geometries, which performed different strain-paths from pure shear (-2ɛ2=ɛ1) up to biaxial stretching (ɛ2=ɛ1). The former works of Hill, Levy-Tyne and Keeler-Brazier made possible some kind of theoretical strain determination, too. This was followed by the stress calculation based on the experimental and theoretical strain data. Since the n exponent in the Nádai expression is varying with the strain at some DP steels, we applied the least-squares method to fit other hardening model parameters (Ludwik, Voce, Hockett-Sherby) to calculate the stress fields belonging to each limit strains. The results showed that each model parameters could produce some discrepancies between the limit stress states in the range of higher equivalent strains than uniaxial stretching. The calculated hardening models were imported to FE code to extend and validate the results by numerical simulations.

  9. Optimizing the Parameters in Heat Treatment for Achieving High Hardness and Efficient Bending of Thin BS 2014 Aluminium Alloy Sheets

    Directory of Open Access Journals (Sweden)

    Abirami Priyadarshini B.

    2016-05-01

    Full Text Available The present work targets in setting a standard heat treatment procedure for obtaining high hardness values of the order of 80 HRB in BS 2014 aluminium alloy sheets of 2mm thick commonly used in aerospace industries. A hardness range of 60HRB to 72HRB is possible in low thickness sheets as stated in the standard BS EN 485-2:2013. Experiments were performed to achieve higher hardness values by controlling the heat treatment temperatures thereby understanding the ageing mechanism of the Al-Cu alloy to a wider extent. The validated process sequence in turn resulted in complications where bending of the sheets resulted in cracking. Further investigation was performed and it was found that the BS 2014 alloy has to be bent within two hours of solution annealing in order to have an efficient bending. The results showed that the natural ageing is so rapid in this alloy, which strengthens the material so quickly by the formation of CuAl2 precipitates, thereby, demanding the bending procedure to be performed before the growth of precipitates becomes dominant.

  10. Low Temperature Synthesis of Fluorine-Doped Tin Oxide Transparent Conducting Thin Film by Spray Pyrolysis Deposition.

    Science.gov (United States)

    Ko, Eun-Byul; Choi, Jae-Seok; Jung, Hyunsung; Choi, Sung-Churl; Kim, Chang-Yeoul

    2016-02-01

    Transparent conducting oxide (TCO) is widely used for the application of flat panel display like liquid crystal displays and plasma display panel. It is also applied in the field of touch panel, solar cell electrode, low-emissivity glass, defrost window, and anti-static material. Fluorine-doped tin oxide (FTO) thin films were fabricated by spray pyrolysis of ethanol-added FTO precursor solutions. FTO thin film by spray pyrolysis is very much investigated and normally formed at high temperature, about 500 degrees C. However, these days, flexible electronics draw many attentions in the field of IT industry and the research for flexible transparent conducting thin film is also required. In the industrial field, indium-tin oxide (ITO) film on polymer substrate is widely used for touch panel and displays. In this study, we investigated the possibility of FTO thin film formation at relatively low temperature of 250 degrees C. We found out that the control of volume of input precursor and exhaust gases could make it possible to form FTO thin film with a relatively low electrical resistance, less than 100 Ohm/sq and high optical transmittance about 88%.

  11. Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

    Science.gov (United States)

    El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

    2018-02-01

    The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

  12. Electrical conductivity dependence of thin metallic films of Au and Pd as a top electrode in capacitor applications

    International Nuclear Information System (INIS)

    Nazarpour, S.; Langenberg, E.; Jambois, O.; Ferrater, C.; Garcia-Cuenca, M.V.; Polo, M.C.; Varela, M.

    2009-01-01

    Electrical conductivity dependence of thin metallic films of Au and Pd over the different perovskites was investigated. It is found from electrical properties that crystallographic growth orientation of Au and Pd thin layers attained from X-ray diffraction results indicate the slop of current (I)-voltage (V) plots. Besides, surface morphology and topography was considered using Field Emission Scanning Electron Microscopy and Atomic Force Microscopy, respectively. Obtained results showed the Stranski-Krastanov growth of the Pd and Au. Indeed, diminishing of the root-mean-square roughness of Pd/BiMnO 3 /SrTiO 3 following by Au deposition should be concerned due to growth of Au onto the crack-like parts of the substrate. These crack-like parts appeared due to parasitic phases of the Bi-Mn-O system mainly Mn 3 O 4 (l 0 l) and Mn 3 O 4 (0 0 4 l). The different response in the electrical properties of heterostructures suggests that electrical conductance of the Au and Pd thin metallic films have the crystallographic orientation dependence. Furthermore, polycrystallinity of the thin metallic films are desired in electrode applications due to increase the conductivity of the metallic layers.

  13. Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

    International Nuclear Information System (INIS)

    Finger, F.; Astakhov, O.; Bronger, T.; Carius, R.; Chen, T.; Dasgupta, A.; Gordijn, A.; Houben, L.; Huang, Y.; Klein, S.; Luysberg, M.; Wang, H.; Xiao, L.

    2009-01-01

    Crystalline silicon carbide alloys have a very high potential as transparent conductive window layers in thin-film solar cells provided they can be prepared in thin-film form and at compatible deposition temperatures. The low-temperature deposition of such material in microcrystalline form (μc-Si:C:H) was realized by use of monomethylsilane precursor gas diluted in hydrogen with the Hot-Wire Chemical Vapor Deposition process. A wide range of deposition parameters has been investigated and the structural, electronic and optical properties of the μc-SiC:H thin films have been studied. The material, which is strongly n-type from unintentional doping, has been used as window layer in n-side illuminated microcrystalline silicon solar cells. High short-circuit current densities are obtained due to the high transparency of the material resulting in a maximum solar cell conversion efficiency of 9.2%.

  14. Effects of radiation and thermal conductivity on MHD boundary layer flow with heat transfer along a vertical stretching sheet in a porous medium

    KAUST Repository

    Ferdows, M.

    2017-03-10

    A steady two-dimensional free convective flow of a viscous incompressible fluid along a vertical stretching sheet with the effect of magnetic field, radiation and variable thermal conductivity in porous media is analyzed. The nonlinear partial differential equations, governing the flow field under consideration, have been transformed by a similarity transformation into a systemof nonlinear ordinary differential equations and then solved numerically. Resulting non-dimensional velocity and temperature profiles are then presented graphically for different values of the parameters. Finally, the effects of the pertinent parameters, which are of physical and engineering interest, are examined both in graphical and tabular form.

  15. Effect of substrate temperature on ac conduction properties of amorphous and polycrystalline GaSe thin films

    International Nuclear Information System (INIS)

    Thamilselvan, M.; PremNazeer, K.; Mangalaraj, D.; Narayandass, Sa.K.; Yi, Junsin

    2004-01-01

    X-ray diffraction analysis of GaSe thin films used in the present investigation showed that the as-deposited and the one deposited at higher substrate temperature are in amorphous and polycrystalline state, respectively. The alternating current (ac) conduction properties of thermally evaporated films of GaSe were studied ex situ employing symmetric aluminium ohmic electrodes in the frequency range of 120-10 5 Hz at various temperature regimes. For the film deposited at elevated substrate temperature (573 K) the ac conductivity was found to increase with improvement of its crystalline structure. The ac conductivity (σ ac ) is found to be proportional to (ω s ) where s m calculated from ac conductivity measurements are compared with optical studies of our previous reported work for a-GaSe and poly-GaSe thin films. The distance between the localized centres (R), activation energy (ΔE σ ) and the number of sites per unit energy per unit volume N(E F ) at the Fermi level were evaluated for both a-GaSe and poly-GaSe thin films. Goswami and Goswami model has been invoked to explain the dependence of capacitance on frequency and temperature

  16. Transparent and conductive electrodes by large-scale nanostructuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    grid, and nano-wire thin-films [1]. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  17. Balancing hole and electron conduction in ambipolar split-gate thin-film Transistors

    NARCIS (Netherlands)

    Yoo, H.; Ghittorelli, M.; Lee, D.-K.; Smits, E.C.P.; Gelinck, G.H.; Ahn, H.; Lee, H.-K.; Torricelli, F.; Kim, J.-J.

    2017-01-01

    Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film

  18. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  19. Optimization of resistance spot welding on the assembly of refractory alloy 50Mo-50Re thin sheet

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Jianhui [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Jiang, Xiuping [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Zeng, Qiang [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States); Zhai, Tongguang [Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington, KY 40506 (United States)]. E-mail: tzhai0@engr.uky.edu; Leonhardt, Todd [Rhenium Alloys Inc., Elyria, OH 44036 (United States); Farrell, John [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States); Umstead, Williams [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States); Effgen, Michael P. [Semicon Associates, 695 Laco Drive, Lexington, KY 40510 (United States)

    2007-07-01

    Resistance spot welding (RSW) was employed to pre-join refractory alloy 50Mo-50Re (wt%) sheet with a 0.127 mm gage. Five important welding parameters (hold time, electrode, ramp time, weld current and electrode force) were adjusted in an attempt to optimize the welding quality. It was found that increasing the hold time from 50 ms to 999 ms improved the weld strength. Use of rod-shaped electrodes produced symmetric nugget and enhanced the weld strength. Use of a ramp time of 8 ms minimized electrode sticking and molten metal expulsion. The weld strength continuously increased with increasing the weld current up to 1100 A, but the probabilities of occurrence of electrode sticking and molten metal expulsion were also increased. Electrode force was increased from 4.44 N to 17.8 N, in order to reduce the inconsistency of the welding quality. Welding defects including porosities, columnar grains and composition segregation were also studied.

  20. Optical spectroscopy, optical conductivity, dielectric properties and new methods for determining the gap states of CuSe thin films

    International Nuclear Information System (INIS)

    Sakr, G.B.; Yahia, I.S.; Fadel, M.; Fouad, S.S.; Romcevic, N.

    2010-01-01

    Research highlights: → The structural, optical dispersion parameters and the Raman spectroscopy have been studied for CuSe thin films. → X-ray diffraction results indicate the amorphous nature of the thermally evaporated CuSe thin films. → The refractive index shows an anomalous dispersion at the lower wavelength (absorption region) and a normal dispersion at the higher wavelengths (transparent region). → The refractive index dispersion obeys the single oscillator model proposed by Wemple and DiDomenico WDD model and the single oscillator parameters were determined. → The band gap of CuSe thin films was determined by three novel methods i.e. (relaxation time, real and imaginary dielectric constant and real and imaginary optical conductivity) which in a good agreement with the Tauc band gap value. - Abstract: The paper describes the structural and optical properties of CuSe thin films. X-ray diffraction pattern indicates that CuSe thin film has an amorphous structure. Transmittance T(λ) and reflectance R(λ) measurements in the wavelength range (300-1700 nm) were used to calculate the refractive index n(λ), the absorption index and the optical dispersion parameters according to Wemple and Didomenico WDD model. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal dispersion in the transparent region. The optical bandgap has been estimated and confirmed by four different methods. The value for the direct bandgap for the as-deposited CuSe thin film approximately equals 2.7 eV. The Raman spectroscopy was used to identify and quantify the individual phases presented in the CuSe films.

  1. Investigation into short-range order, electric conductivity and optical absorption edge of indium selenide thin amorphous films

    International Nuclear Information System (INIS)

    Bilyj, M.N.; Didyk, G.V.; Stetsiv, Ya.I.; Yurechko, R.Ya.

    1980-01-01

    Thin amorphous films of InSe have been obtained by the method of discrete vacuum evaporation of about 10 -2 Pa. The short-range order is investigated according to the radial distribution curves. The temperature and film thickness are shown to affect the character of conductivity. The width of the forbidden band determined by the fundamental absorption edge is found to depend on the time of film annealing

  2. Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling

    Science.gov (United States)

    Huebner, Torsten; Martens, Ulrike; Walowski, Jakob; Münzenberg, Markus; Thomas, Andy; Reiss, Günter; Kuschel, Timo

    2018-06-01

    In general, it is difficult to access the thermal conductivity of thin insulating films experimentally by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl2O4 (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO (0.7 W (K · m)‑1) and MgO (5.8 W (K · m)‑1), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.

  3. The influence of Ga{sup +} irradiation on the transport properties of mesoscopic conducting thin films

    Energy Technology Data Exchange (ETDEWEB)

    Barzola-Quiquia, J; Dusari, S; Bridoux, G; Bern, F; Molle, A; Esquinazi, P, E-mail: j.barzola@physik.uni-leipzig.de, E-mail: esquin@physik.uni-leipzig.de [Division of Superconductivity and Magnetism, Universitaet Leipzig, Linnestrasse 5, D-04103 Leipzig (Germany)

    2010-04-09

    We studied the influence of 30 keV Ga{sup +}-ions-commonly used in focused-ion-beam (FIB) devices-on the transport properties of thin crystalline graphite flakes, and La{sub 0.7}Ca{sub 0.3}MnO{sub 3} and Co thin films. The changes in electrical resistance were measured in situ during irradiation and also the temperature and magnetic field dependence before and after irradiation. Our results show that the transport properties of these materials strongly change at Ga{sup +} fluences much below those used for patterning and ion-beam-induced deposition (IBID), seriously limiting the use of FIB when the intrinsic properties of the materials of interest are of importance. We present a method that can be used to protect the sample as well as to produce selectively irradiation-induced changes.

  4. Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y

    2008-01-01

    Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1

  5. Charge conduction process and photovoltaic effects in thiazole yellow (TY) thin film based Schottky devices

    Energy Technology Data Exchange (ETDEWEB)

    Roy, M.S. [Defence Lab., Jodhpur (India). Camouflage Div.; Sharma, G.D.; Gupta, S.K. [Department of Physics, J.N.V. University, Jodhpur (Raj.) (India)

    1997-11-21

    The charge generation and photovoltaic effects observed with thin films of TY in the form of sandwich structures, were analysed by J-V, C-V and photoaction spectra. These measurements were explained in terms of n-type semiconductivity of TY thin film and by the formation of a Schottky barrier with ITO while Ohmic contact with an Al or In electrode. The existence of thermionic emission over the ITO-TY barrier has been observed in low voltage region, whereas at high voltages, the process is dominant by the series resistance of TY layer. Various electrical parameters were calculated from the analysis of J-V and C-V characteristics of the devices and discussed in details. The diode quality factor is higher for Al/TY/ITO than In/TY/ITO device which can be attributed to the formation of thin layer of Al{sub 2}O{sub 3} between Al and TY. The photoaction spectra of the devices reveal that the fraction of light which is absorbed near the ITO-TY interface, to the depth of 180 A, is responsible for producing the charge carriers. The photovoltaic parameters were also calculated from the J-V characteristics of the devices, under illumination and described in detail. (orig.) 21 refs.

  6. Influence of Variable Thermal Conductivity on MHD Boundary Layer Slip Flow of Ethylene-Glycol Based Cu Nanofluids over a Stretching Sheet with Convective Boundary Condition

    Directory of Open Access Journals (Sweden)

    N. Bhaskar Reddy

    2014-01-01

    Full Text Available An analysis is carried out to investigate the influence of variable thermal conductivity and partial velocity slip on hydromagnetic two-dimensional boundary layer flow of a nanofluid with Cu nanoparticles over a stretching sheet with convective boundary condition. Using similarity transformation, the governing boundary layer equations along with the appropriate boundary conditions are transformed to a set of ordinary differential equations. Employing Runge-kutta fourth-order method along with shooting technique, the resultant system of equations is solved. The influence of various pertinent parameters such as nanofluid volume fraction parameter, the magnetic parameter, radiation parameter, thermal conductivity parameter, velocity slip parameter, Biot number, and suction or injection parameter on the velocity of the flow field and heat transfer characteristics is computed numerically and illustrated graphically. The present results are compared with the existing results for the case of regular fluid and found an excellent agreement.

  7. Identification of an Actual Strain-Induced Effect on Fast Ion Conduction in a Thin-Film Electrolyte.

    Science.gov (United States)

    Ahn, Junsung; Jang, Ho Won; Ji, Hoil; Kim, Hyoungchul; Yoon, Kyung Joong; Son, Ji-Won; Kim, Byung-Kook; Lee, Hae-Weon; Lee, Jong-Ho

    2018-05-09

    Strain-induced fast ion conduction has been a research area of interest for nanoscale energy conversion and storage systems. However, because of significant discrepancies in the interpretation of strain effects, there remains a lack of understanding of how fast ionic transport can be achieved by strain effects and how strain can be controlled in a nanoscale system. In this study, we investigated strain effects on the ionic conductivity of Gd 0.2 Ce 0.8 O 1.9-δ (100) thin films under well controlled experimental conditions, in which errors due to the external environment could not intervene during the conductivity measurement. In order to avoid any interference from perpendicular-to-surface defects, such as grain boundaries, the ionic conductivity was measured in the out-of-plane direction by electrochemical impedance spectroscopy analysis. With varying film thickness, we found that a thicker film has a lower activation energy of ionic conduction. In addition, careful strain analysis using both reciprocal space mapping and strain mapping in transmission electron microscopy shows that a thicker film has a higher tensile strain than a thinner film. Furthermore, the tensile strain of thicker film was mostly developed near a grain boundary, which indicates that intrinsic strain is dominant rather than epitaxial or thermal strain during thin-film deposition and growth via the Volmer-Weber (island) growth mode.

  8. Effect of helium gas pressure on dc conduction mechanism and EMI shielding properties of nanocrystalline carbon thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rawal, Ishpal, E-mail: rawalishpal@gmail.com [Department of Physics, Kirori Mal College, University of Delhi, Delhi 110007 (India); Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Singh, Avanish Pratap; Dhawan, S.K. [Polymeric and Soft Materials Group, Physics Engineering of Carbon, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

    2015-05-05

    This paper reports the effect of helium partial pressures ∼1.2 × 10{sup −5} (base pressure), 1.4 × 10{sup −4}, 8.6 × 10{sup −3} and 0.1 mbar on the variable range hopping conduction in nanocrystalline carbon thin films deposited by filtered cathodic jet carbon arc technique. High resolution transmission electron microscopy studies suggest the random distribution of nanocrystallites (∼3–7 nm) in the amorphous matrix. The DC conduction behavior of the deposited nanocrystalline films has been studied in the light of Mott's variable range hopping (VRH) model and found to obey three dimensional VRH conduction. The randomly distributed nanocrystallites in amorphous matrix may lead to change in the distribution of density of states near Fermi level and hence, the conduction behavior. The enhanced electrical conductivity of the deposited films due to the helium environment makes them suitable for electromagnetic interference shielding applications. The sample deposited at a helium partial pressure of 0.1 mbar has a value of shielding effectiveness ∼7.84 dB at 18 GHz frequency. - Highlights: • Nanocrystalline carbon thin films (NCTF) has been deposited by FCJCA technique. • Effect of helium gas pressure has been studied on the properties of NCTF. • Investigation of EMI shielding properties of NCTF has been carried out.

  9. Thin Sheet Modeling for the Seismogenic Crust of Western North America: How Strong is the top Slice of "Sandwich Bread" Above the "Jelly"?

    Science.gov (United States)

    Klein, E. C.; Holt, W. E.; Flesch, L. M.; Haines, A. J.

    2006-12-01

    The "jelly sandwich" and "crème brûlée" models divides continental lithosphere into distinct rheological layers. Dynamic models from thin sheet approximations provide estimates of the total strength of the lithosphere, but only to a thickness governed by the degree of mechanical coupling between rheological layers. If either the "jelly sandwich" or the "crème brûlée" model of the lithosphere is appropriate for the diffuse plate boundary zone setting of western North America, we expect a sharp contrast or decoupling between the strong upper crust ("bread") layer overlying the weak lower crustal ("jelly") layer. We examine the strength of the upper crust with and without strength contribution from the lower crust using thin sheet modeling methodologies. We use seismically defined densities to constrain vertical integrals of vertical stress (GPE) within the crust. Neglecting stresses due to flexure as well as shear stresses at the base of the crustal layer, lateral differences in GPE within the layer, are balanced solely by gradients in horizontal deviatoric stress [Flesch et al., 2001, 2006]. We solve the force-balance equations for the minimum deviatoric stress field associated with gradients of GPE. This deviatoric stress field calibrates the magnitude of deviatoric stresses within the seismogenic layer. We then solve for stress field boundary conditions associated with the stress field contributions from sources outside the modeled region that together with the minimum solution from GPE differences provide a best match with stress field indicators within western North America. In order to infer appropriate stress field indicators we develop a long-term kinematic strain rate and velocity field model. Where we use this strain rate field we assume that the relationship between deviatoric stress directions and kinematic strain rate directions is isotropic. In our calculations the seismogenic layer extends from the surface to either a uniform depth below sea

  10. Microstructure, thickness and sheet resistivity of Cu/Ni thin film produced by electroplating technique on the variation of electrolyte temperature

    Science.gov (United States)

    Toifur, M.; Yuningsih, Y.; Khusnani, A.

    2018-03-01

    In this research, it has been made Cu/Ni thin film produced with electroplating technique. The deposition process was done in the plating bath using Cu and Ni as cathode and anode respectively. The electrolyte solution was made from the mixture of HBrO3 (7.5g), NiSO4 (100g), NiCl2 (15g), and aquadest (250 ml). Electrolyte temperature was varied from 40°C up to 80°C, to make the Ni ions in the solution easy to move to Cu cathode. The deposition was done during 2 minutes on the potential of 1.5 volt. Many characterizations were done including the thickness of Ni film, microstructure, and sheet resistivity. The results showed that at all samples Ni had attacked on the Cu substrate to form Cu/Ni. The raising of electrolyte temperature affected the increasing of Ni thickness that is the Ni thickness increase with the increasing electrolyte temperature. From the EDS spectrum, it can be informed that samples already contain Ni and Cu elements and NiO and CuO compounds. Addition element and compound are found for sample Cu/Ni resulted from 70° electrolyte temperature of Ni deposition, that are Pt and PtO2. From XRD pattern, there are several phases which have crystal structure i.e. Cu, Ni, and NiO, while CuO and PtO2 have amorphous structure. The sheet resistivity linearly decreases with the increasing electrolyte temperature.

  11. Spin- and valley-dependent electrical conductivity of ferromagnetic group-IV 2D sheets in the topological insulator phase

    Science.gov (United States)

    Hoi, Bui Dinh; Yarmohammadi, Mohsen; Mirabbaszadeh, Kavoos; Habibiyan, Hamidreza

    2018-03-01

    In this work, based on the Kubo-Greenwood formalism and the k . p Hamiltonian model, the impact of Rashba spin-orbit coupling on electronic band structure and electrical conductivity of spin-up and spin-down subbands in counterparts of graphene, including silicene, stanene, and germanene nanosheets has been studied. When Rashba coupling is considered, the effective mass of Dirac fermions decreases significantly and no significant change is caused by this coupling for the subband gaps. All these nanosheets are found to be in topological insulator quantum phase at low staggered on-site potentials due to the applied perpendicular external electric field. We point out that the electrical conductivity of germanene increases gradually with Rashab coupling, while silicene and stanene have some fluctuations due to their smaller Fermi velocity. Furthermore, some critical temperatures with the same electrical conductivity values for jumping to the higher energy levels are observed at various Rashba coupling strengths. For all structures, a broad peak appears at low temperatures in electrical conductivity curves corresponding to the large entropy of systems when the thermal energy reaches to the difference between the energy states. Finally, we have reported that silicene has the larger has the larger electrical conductivity than two others.

  12. Fabrication of conducting composite sheets using cost-effective graphite flakes and amorphous styrene acrylonitrile for enhanced thermistor, dielectric, and electromagnetic interference shielding properties

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, Varij, E-mail: varijpanwarcertain@gmail.com [Electronics and Communication Engineering, Graphic Era University, Dehradun, Uttarakhand (India); Gill, Fateh Singh; Rathi, Vikas; Tewari, V.K. [Electronics and Communication Engineering, Graphic Era University, Dehradun, Uttarakhand (India); Mehra, R.M. [Sharda University, Greater Noida (India); Park, Jong-Oh, E-mail: jop@jnu.ac.kr [School of Mechanical Engineering, Chonnam National University, Gwangju (Korea, Republic of); Park, Sukho, E-mail: shpark12@dgist.ac.kr [Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu (Korea, Republic of)

    2017-06-01

    The fabrication of strong conducting composite sheets (CCSs) using a simple technique with cost-effective materials is desirable for capacitor, decoupling capacitor, and electromagnetic interference (EMI) shielding applications. Here, we used cost-effective graphite flakes (GFs) as a conducting filler and amorphous poly (styrene-co-acrylonitrile) (PSAN) as an insulating polymer to fabricate a CCS via a simple mechanical mixing and hot compression molding process in 2.5 h, with the aim to save time and avoid the use of toxic reagents, which are generally used in chemical methods. In the present method, the GFs are connected in diffusively adhere polymer matrix, controlled by temperature and pressure that generate the conduction in the CCSs. The resulting PSAN/GF CCSs were characterized by using scanning electron microscopy (SEM), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), and hardness tests. The GFs penetrated the interfacial region of PSAN, thus improving the thermistor and dielectric properties (dielectric constant, AC conductivity, and dissipation factor) of the PSAN/GF CCSs. Furthermore, the PSAN/GF CCSs showed enhanced hardness and EMI shielding effectiveness (SE) properties in the X-band frequency range (8.5–12.5 GHz). The percolation theory was implemented to DC and AC conductivity. To detect the transition of the dielectric properties, the dielectric constant of the CCSs was analyzed with increasing volume fraction of GFs in the radio frequency region. The improved dielectric constant, AC conductivity, and dissipation factor of the PSAN/GF CCS, indicated a significant improvement in their EMI shielding properties in the X-band frequency range, which were measured using the waveguide method. The ac conductivity of PSAN/GF CCS shows stable behavior in the higher frequency ranges. The EMISE of PSAN/GF CCS were found to increase with increasing GF content due to the absorbance mechanism. - Highlights: • Enhanced hardness and

  13. Local photoconductivity of microcrystalline silicon thin films measured by conductive atomic force microscopy

    Czech Academy of Sciences Publication Activity Database

    Ledinský, Martin; Fejfar, Antonín; Vetushka, Aliaksi; Stuchlík, Jiří; Rezek, Bohuslav; Kočka, Jan

    2011-01-01

    Roč. 5, 10-11 (2011), s. 373-375 ISSN 1862-6254 R&D Projects: GA MŠk(CZ) LC06040; GA MŠk(CZ) MEB061012; GA AV ČR KAN400100701; GA MŠk LC510 EU Projects: European Commission(XE) 240826 - PolySiMode Institutional research plan: CEZ:AV0Z10100521 Keywords : amorphous silicon * nanocrystalline silicon * thin films * atomic force microscopy * photoconductivity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.218, year: 2011

  14. Untangling surface oxygen exchange effects in YBa2Cu3O6+x thin films by electrical conductivity relaxation.

    Science.gov (United States)

    Cayado, P; Sánchez-Valdés, C F; Stangl, A; Coll, M; Roura, P; Palau, A; Puig, T; Obradors, X

    2017-05-31

    The kinetics of oxygen incorporation (in-diffusion process) and excorporation (out-diffusion process), in YBa 2 Cu 3 O 6+x (YBCO) epitaxial thin films prepared using the chemical solution deposition (CSD) methodology by the trifluoroacetate route, was investigated by electrical conductivity relaxation measurements. We show that the oxygenation kinetics of YBCO films is limited by the surface exchange process of oxygen molecules prior to bulk diffusion into the films. The analysis of the temperature and oxygen partial pressure influence on the oxygenation kinetics has drawn a consistent picture of the oxygen surface exchange process enabling us to define the most likely rate determining step. We have also established a strategy to accelerate the oxygenation kinetics at low temperatures based on the catalytic influence of Ag coatings thus allowing us to decrease the oxygenation temperature in the YBCO thin films.

  15. Rapid fabrication of transparent conductive films with controllable sheet resistance on glass substrates by laser annealing of diamond-like carbon films

    International Nuclear Information System (INIS)

    Lee, Keunhee; Ki, Hyungson

    2016-01-01

    We report a laser-based method for directly fabricating large-area, transparent conductive films with customizable electrical resistance on glass. In this method, a diamond-like carbon (DLC) film is deposited first on a glass substrate by pulsed laser deposition, which is then annealed in a helium shielding environment by a 2 kW continuous-wave fiber laser with a wavelength of 1070 nm, which is transparent to glass but is absorbed by DLC to transform the amorphous carbons to graphene. When a 510 nm thick film was annealed at a scanning speed of 1 m/s by a 200 μm top-hat laser beam, the sp 3 fraction was decreased from 43.1% to 8.1% after the annealing process, and the transformed film showed a transparency of ∼80% (at 550 nm) and a sheet resistance of ∼2050 Ω/sq. We also showed that sheet resistance and transparency can be controlled by changing processing parameters. To show the scalability of the method, a 15 mm wide line beam was used to produce a 15 mm × 15 mm film. This method is simple, fully scalable, transfer-free and catalyst-free, and we believe that the fabricated films can have many applications with further research, such as transparent heating films, electromagnetic shielding films, and transparent electrodes.

  16. INDUCTION HEATING OF NON-MAGNETIC SHEET METALS IN THE FIELD OF A FLAT CIRCULAR MULTITURN SOLENOID

    Directory of Open Access Journals (Sweden)

    Y. Batygin

    2016-06-01

    Full Text Available The theoretical analysis of electromagnetic processes in the system for induction heating presented by a flat circular multiturn solenoid positioned above a plane of thin sheet non-magnetic metal has been conducted. The calculated dependences for the current induced in a metal sheet blank and ratio of transformation determined have been obtained. The maximal value of the transformation ratio with regard to spreading the eddy-currents over the whole area of the sheet metal has been determined.

  17. Electric conduction mechanism of some heterocyclic compounds, 4,4′-bipyridine and indolizine derivatives in thin films

    Energy Technology Data Exchange (ETDEWEB)

    Danac, Ramona, E-mail: rdanac@uaic.ro [Faculty of Chemistry, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Leontie, Liviu, E-mail: lleontie@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Carlescu, Aurelian, E-mail: carlescu_aurelian@yahoo.com [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Shova, Sergiu, E-mail: shova@icmpp.ro [Petru Poni Institute of Macromolecular Chemistry, Aleea Grigore Ghica Voda, Nr. 41A, 700487 Iasi (Romania); Tiron, Vasile, E-mail: vasile.tiron@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Rusu, George G., E-mail: rusugxg@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Iacomi, Felicia, E-mail: iacomi@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Gurlui, Silviu, E-mail: sgurlui@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Șușu, Oana, E-mail: oasusu@gmail.com [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania); Rusu, Gheorghe I., E-mail: girusu@uaic.ro [Faculty of Physics, Alexandru Ioan Cuza University of Iasi, Bulevardul Carol I, Nr. 11, 700506 Iasi (Romania)

    2016-08-01

    Temperature dependence of d. c. electric conductivity of some recently synthesized heterocyclic compounds, 4,4′-bipyridine and indolizine derivatives, in thin films (d = 0.27–0.51 μm) spin-coated from chloroform solutions onto glass, is studied. The investigated compounds are polycrystalline (as shown by X-ray Diffraction analysis) and show typical n-type semiconductor behavior. The activation energy of d. c. electric conduction ranges between 1.55 and 2.33 eV. Some correlations between semiconducting characteristics and essential features of molecular structure of organic compounds have been established. In the higher temperature range (400–520 K), the electronic transport properties in present compounds can be explained in the frame of band gap representation model, while in the lower temperature range (300–350 K), the Mott's variable-range hopping conduction model can be conveniently used. - Highlights: • 4,4′-bipyridine and indolizine derivatives in thin films behave as n-type semiconductors. • The electron transfer is favored by extended conjugation and packing capacity. • The band gap representation is suitable in the higher temperature range. • The Mott's VRH conduction model may be used in the lower temperature range.

  18. Morphology, conductivity, and wetting characteristics of PEDOT:PSS thin films deposited by spin and spray coating

    Energy Technology Data Exchange (ETDEWEB)

    Zabihi, F.; Xie, Y.; Gao, S.; Eslamian, M., E-mail: Morteza.Eslamian@sjtu.edu.cn

    2015-05-30

    Highlights: • Nanostructure of spun-on and spray-on PEDOT:PSS thin films is studied. • A correlation is established between the film nanostructure and electrical conductivity. • Effect of process parameters is studied on the film characteristics. • A high solution concentration, high process temperature and multiple deposition layers are recommended. - Abstract: The goal of this paper is to study the characteristics of PEDOT:PSS thin films and the effects of varying the processing parameters on the structure, functionality, and surface wetting of spun-on and spray-on PEDOT:PSS thin films. PEDOT:PSS is a polymer mixture, which is electrically conductive and transparent and, therefore, is an attractive material for some optoelectronic applications, such as organic and perovskite solar cells. In this work, the films are fabricated using spin coating (a lab-scale method) and spray coating (an up-scalable method). The effects of spinning speed, drying time, and post-annealing temperature on spun-on samples and the effects of the substrate temperature and number of spray passes (deposition layers) on spray-on samples, as well as the effect of precursor solution concentration on both cases are investigated. Various characterization tools, such as AFM, SEM, XRD, confocal laser scanning microscopy (CLSM), and electrical conductivity measurements are used to determine the film roughness, thickness, structure, and morphology. The solution precursor physical data, such as contact angle on glass substrates, viscosity, and interfacial tension, are also obtained within a practical range of temperatures and concentrations. It is found that in both spin and spray coating routes, only well-controlled operating conditions result in the formation of conductive and defect-free PEDOT:PSS films. The formation of PEDOT:PSS thin films with small grains composed of PEDOT forming the core of the grains and PSS forming a shell or coating, which are evenly distributed in a PSS

  19. Morphology, conductivity, and wetting characteristics of PEDOT:PSS thin films deposited by spin and spray coating

    International Nuclear Information System (INIS)

    Zabihi, F.; Xie, Y.; Gao, S.; Eslamian, M.

    2015-01-01

    Highlights: • Nanostructure of spun-on and spray-on PEDOT:PSS thin films is studied. • A correlation is established between the film nanostructure and electrical conductivity. • Effect of process parameters is studied on the film characteristics. • A high solution concentration, high process temperature and multiple deposition layers are recommended. - Abstract: The goal of this paper is to study the characteristics of PEDOT:PSS thin films and the effects of varying the processing parameters on the structure, functionality, and surface wetting of spun-on and spray-on PEDOT:PSS thin films. PEDOT:PSS is a polymer mixture, which is electrically conductive and transparent and, therefore, is an attractive material for some optoelectronic applications, such as organic and perovskite solar cells. In this work, the films are fabricated using spin coating (a lab-scale method) and spray coating (an up-scalable method). The effects of spinning speed, drying time, and post-annealing temperature on spun-on samples and the effects of the substrate temperature and number of spray passes (deposition layers) on spray-on samples, as well as the effect of precursor solution concentration on both cases are investigated. Various characterization tools, such as AFM, SEM, XRD, confocal laser scanning microscopy (CLSM), and electrical conductivity measurements are used to determine the film roughness, thickness, structure, and morphology. The solution precursor physical data, such as contact angle on glass substrates, viscosity, and interfacial tension, are also obtained within a practical range of temperatures and concentrations. It is found that in both spin and spray coating routes, only well-controlled operating conditions result in the formation of conductive and defect-free PEDOT:PSS films. The formation of PEDOT:PSS thin films with small grains composed of PEDOT forming the core of the grains and PSS forming a shell or coating, which are evenly distributed in a PSS

  20. Study on characteristics of a double-conductible channel organic thin-film transistor with an ultra-thin hole-blocking layer

    International Nuclear Information System (INIS)

    Guang-Cai, Yuan; Zheng, Xu; Su-Ling, Zhao; Fu-Jun, Zhang; Xue-Yan, Tian; Xu-Rong, Xu; Na, Xu

    2009-01-01

    The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at V DS = −20 V showed excellent hole mobility μFE and threshold voltage V TH of 0.58 cm 2 /(V·s) and −4.6 V, respectively

  1. Experimental investigation and finite element simulation of laser beam welding induced residual stresses and distortions in thin sheets of AA 6056-T4

    International Nuclear Information System (INIS)

    Zain-ul-abdein, Muhammad; Nelias, Daniel; Jullien, Jean-Francois; Deloison, Dominique

    2010-01-01

    Laser beam welding has recently found its application in the fabrication of aircraft structures where fuselage panels, made of thin sheets of AA 6056-T4 (an aluminium alloy), are welded with stiffeners of the same material in a T-joint configuration. The present work simulates laser beam welding induced residual stresses and distortions using industrially employed thermal and mechanical boundary conditions. Various measurements performed on small-scale welded test specimens provide a database of experimental results that serves as a benchmark for qualification of the simulation results. The welding simulation is performed with the commercial finite element software Abaqus and a Fortran programme encoding a conical heat source with Gaussian volumetric distribution of flux. A sequentially coupled temperature-displacement analysis is undertaken to simulate the weld pool geometry, transient temperature and displacement fields. The material is assumed to follow an elasto-plastic law with isotropic hardening behaviour (von Mises plasticity model). A comparison between the experimental and simulation results shows a good agreement. Finally, the residual stress and strain states in a T-joint are predicted.

  2. Perovskite Thin Film Solar Cells Based on Inorganic Hole Conducting Materials

    Directory of Open Access Journals (Sweden)

    Pan-Pan Zhang

    2017-01-01

    Full Text Available Organic-inorganic metal halide perovskites have recently shown great potential for application, due to their advantages of low-cost, excellent photoelectric properties and high power conversion efficiency. Perovskite-based thin film solar cells have achieved a power conversion efficiency (PCE of up to 20%. Hole transport materials (HTMs are one of the most important components of perovskite solar cells (PSCs, having functions of optimizing interface, adjusting the energy match, and helping to obtain higher PCE. Inorganic p-type semiconductors are alternative HTMs due to their chemical stability, higher mobility, high transparency in the visible region, and applicable valence band (VB energy level. This review analyzed the advantages, disadvantages, and development prospects of several popular inorganic HTMs in PSCs.

  3. Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

    International Nuclear Information System (INIS)

    Mehta, B.R.

    2009-01-01

    Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

  4. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing

    2011-08-29

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.

  5. Fabrication of flexible polymer dispersed liquid crystal films using conducting polymer thin films as the driving electrodes

    International Nuclear Information System (INIS)

    Kim, Yang-Bae; Park, Sucheol; Hong, Jin-Who

    2009-01-01

    Conducting polymers exhibit good mechanical and interfacial compatibility with plastic substrates. We prepared an optimized coating formulation based on poly(3,4-ethylenedioxythiophene) (PEDOT) and 3-(trimethoxysilyl)propyl acrylate and fabricated a transparent electrode on poly(ethylene terephthalate) (PET) substrate. The surface resistances and transmittance of the prepared thin films were 500-600 Ω/□ and 87% at 500 nm, respectively. To evaluate the performance of the conducting polymer electrode, we fabricated a five-layer flexible polymer-dispersed liquid crystal (PDLC) device as a PET-PEDOT-PDLC-PEDOT-PET flexible film. The prepared PDLC device exhibited a low driving voltage (15 VAC), high contrast ratio (60:1), and high transmittance in the ON state (60%), characteristics that are comparable with those of conventional PDLC film based on indium tin oxide electrodes. The fabrication of conducting polymer thin films as the driving electrodes in this study showed that such films can be used as a substitute for an indium tin oxide electrode, which further enhances the flexibility of PDLC film

  6. Controlled oxygen vacancy induced p-type conductivity in HfO{sub 2-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Mueller, Mathis M.; Kleebe, Hans-Joachim; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany); Schroeder, Thomas [IHP, 15236 Frankfurt/Oder (Germany)

    2011-09-12

    We have synthesized highly oxygen deficient HfO{sub 2-x} thin films by controlled oxygen engineering using reactive molecular beam epitaxy. Above a threshold value of oxygen vacancies, p-type conductivity sets in with up to 6 times 10{sup 21} charge carriers per cm{sup 3}. At the same time, the band-gap is reduced continuously by more than 1 eV. We suggest an oxygen vacancy induced p-type defect band as origin of the observed behavior.

  7. Abnormal resistance switching behaviours of NiO thin films: possible occurrence of both formation and rupturing of conducting channels

    Energy Technology Data Exchange (ETDEWEB)

    Liu Chunli; Chae, S C; Chang, S H; Lee, S B; Noh, T W [ReCOE and FPRD, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lee, J S; Kahng, B [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Kim, D-W [Division of Nano Sciences and Department of Physics, Ewha Womens University, Seoul 120-750 (Korea, Republic of); Jung, C U [Department of Physics, Hankuk University of Foreign Studies, Yongin, Gyeonggi-do 449-791 (Korea, Republic of); Seo, S; Ahn, S-E [Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)], E-mail: twnoh@snu.ac.kr

    2009-01-07

    We report a detailed study on the abnormal resistance switching behaviours observed in NiO thin films which show unipolar resistance switching phenomena. During the RESET process, in which the NiO film changed from a low resistance state to a high resistance state, we sometimes observed that the resistance became smaller than the initial value. We simulated the resistance switching by using a random circuit breaker network model. We found that local conducting channels could be formed as well as ruptured during the RESET process, which result in the occurrence of such abnormal switching behaviours.

  8. Fabrication of p-type conductivity in SnO{sub 2} thin films through Ga doping

    Energy Technology Data Exchange (ETDEWEB)

    Tsay, Chien-Yie, E-mail: cytsay@fcu.edu.tw; Liang, Shan-Chien

    2015-02-15

    Highlights: • P-type Ga-doped SnO{sub 2} semiconductor films were prepared by sol-gel spin coating. • Optical bandgaps of the SnO{sub 2}:Ga films are narrower than that of the SnO{sub 2} film. • SnO{sub 2}:Ga films exhibited p-type conductivity as Ga doping content higher than 10%. • A p-n heterojunction composed of p-type SnO{sub 2}:Ga and n-type ZnO:Al was fabricated. - Abstract: P-type transparent tin oxide (SnO{sub 2}) based semiconductor thin films were deposited onto alkali-free glass substrates by a sol-gel spin-coating method using gallium (Ga) as acceptor dopant. In this study, we investigated the influence of Ga doping concentration ([Ga]/[Sn] + [Ga] = 0%, 5%, 10%, 15%, and 20%) on the structural, optical and electrical properties of SnO{sub 2} thin films. XRD analysis results showed that dried Ga-doped SnO{sub 2} (SnO{sub 2}:Ga) sol-gel films annealed in oxygen ambient at 520 °C for 1 h exhibited only the tetragonal rutile phase. The average optical transmittance of as-prepared thin film samples was higher than 87.0% in the visible light region; the optical band gap energy slightly decreased from 3.92 eV to 3.83 eV with increases in Ga doping content. Hall effect measurement showed that the nature of conductivity of SnO{sub 2}:Ga thin films changed from n-type to p-type when the Ga doping level was 10%, and when it was at 15%, Ga-doped SnO{sub 2} thin films exhibited the highest mean hole concentration of 1.70 × 10{sup 18} cm{sup -3}. Furthermore, a transparent p-SnO{sub 2}:Ga (Ga doping level of 15%)/n-ZnO:Al (Al doping level of 2%) heterojunction was fabricated on alkali-free glass. The I-V curve measurement for the p-n heterojunction diode showed a typical rectifying characteristic with a forward turn-on voltage of 0.65 V.

  9. Structural, dielectric and a.c. conductivity study of Sb2O3 thin film ...

    Indian Academy of Sciences (India)

    X-ray diffraction; a.c. conductivity; dielectric properties; complex electric modulus. ... the study disordered systems because of the unusual temper- ..... energy. tunnelling model suggested by Wang et al [31], (s) should decrease with increase in ...

  10. Electrophoretic deposition of thin film zirconia electrolyte on non-conducting NiO-YSZ substrate

    International Nuclear Information System (INIS)

    Das, Debasish; Basu, Rajendra N.

    2014-01-01

    Eight (8) mol% yttria stabilized zirconia (YSZ), an electrolyte material for solid oxide fuel cell (SOFC), has been deposited onto porous non-conducting NiO-YSZ substrate using electrophoretic deposition technique (EPD) from a stable non-aqueous suspension of YSZ. Normally, EPD cannot be performed on a non-conducting substrate, but, in this present study, YSZ particulate film has been successfully deposited on a non-conducting NiO-YSZ substrate following two different EPD approaches:(a) using a conducting metallic plate on the reverse side of the porous NiO-YSZ anode substrate and (b) using a conducting polymer coated NiO-YSZ substrate. The deposited films are then formed dense coatings of 5-15 μm after sintering at 1400℃ for 6 h in air. Surface and cross-sectional morphologies of green and sintered films deposited by different EPD approaches are investigated using SEM. La 0.65 Sr 0.3 MnO 3 (LSM), a cathode for SOFC, is then screen-printed onto the electrolyte layer of such sintered half cells (anode+electrolyte) prepared by both the above approaches to construct SOFC single cells. A maximum output power density of 0.37 W.cm -2 is obtained using single cells prepared by conducting metallic plate assisted EPD compared to that of 0.73 W.cm -2 for polymer coated at 800℃ using H 2 as fuel and O 2 as oxidant. (author)

  11. Thin RuO2 conducting films grown by MOCVD for microelectronic applications

    International Nuclear Information System (INIS)

    Froehlich, K.; Cambel, V.; Machajdik, D.; Pignard, S.; Baumann, P. K.; Lindner, J.; Schumacher, M.

    2002-01-01

    We have prepared thin RuO 2 films by MOCVD using thermal evaporation of Ru(thd) 2 (cod) solid precursor. The films were prepared at deposition temperatures between 250 and 500 grad C on silicon and sapphire substrates. Different structure was observed for the RuO 2 films on these substrates; the films on Si substrate were polycrystalline, while X-ray diffraction analysis revealed epitaxial growth of RuO 2 on sapphire substrates. Polycrystalline RuO 2 films prepared at temperatures below 300 grad C on Si substrate exhibit smooth surface and excellent step coverage. Highly conformal growth of the RuO 2 films at low temperature and low pressure results in nearly 100% step coverage for sub-mm features with 1:1 aspect ratio. Resistivity of the polycrystalline RuO 2 at room temperature ranged between 100 and 200 μ x Ω x cm. These films are suitable for CMOS and RAM applications. (Authors)

  12. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

    2015-09-30

    Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

  13. Sol-gel preparation of ion-conducting ceramics for use in thin films

    International Nuclear Information System (INIS)

    Steinhauser, M.I.

    1992-12-01

    A metal alkoxide sol-gel solution suitable for depositing a thin film of La 0.6 Sr 0.4 CoO 3 on a porous substrate has been developed; such films should be useful in fuel cell electrode and oxygen separation membrane manufacture. Crack-free films have been deposited on both dense and porous substrates by dip-coating and spin-coating techniques followed by a heat treatment in air. Fourier transform infrared spectroscopy was used to determine the chemical structure of metal alkoxide solution system. X-ray diffraction was used to determine crystalline phases formed at various temperatures, while scanning electron microscopy was used to determine physical characteristics of the films. Surface coatings have been successfully applied to porous substrates through the control of the substrate pore size, deposition parameters, and firing parameters. Conditions have been defined for which films can be deposited, and for which the physical and chemical characteristics of the film can be improved. A theoretical discussion of the chemical reactions taking place before and after hydrolysis in the mixed alkoxide solutions is presented, and the conditions necessary for successful synthesis are defined. Applicability of these films as ionic and electronic conductors is discussed

  14. The design of high-temperature thermal conductivity measurements apparatus for thin sample size

    Directory of Open Access Journals (Sweden)

    Hadi Syamsul

    2017-01-01

    Full Text Available This study presents the designing, constructing and validating processes of thermal conductivity apparatus using steady-state heat-transfer techniques with the capability of testing a material at high temperatures. This design is an improvement from ASTM D5470 standard where meter-bars with the equal cross-sectional area were used to extrapolate surface temperature and measure heat transfer across a sample. There were two meter-bars in apparatus where each was placed three thermocouples. This Apparatus using a heater with a power of 1,000 watts, and cooling water to stable condition. The pressure applied was 3.4 MPa at the cross-sectional area of 113.09 mm2 meter-bar and thermal grease to minimized interfacial thermal contact resistance. To determine the performance, the validating process proceeded by comparing the results with thermal conductivity obtained by THB 500 made by LINSEIS. The tests showed the thermal conductivity of the stainless steel and bronze are 15.28 Wm-1K-1 and 38.01 Wm-1K-1 with a difference of test apparatus THB 500 are −2.55% and 2.49%. Furthermore, this apparatus has the capability to measure the thermal conductivity of the material to a temperature of 400°C where the results for the thermal conductivity of stainless steel is 19.21 Wm-1K-1 and the difference was 7.93%.

  15. Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2015-02-01

    In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

  16. Thin, Conductive Permafrost Surrounding Lake Fryxell Indicates Salts From Past Lakes, McMurdo Dry Valleys, Antarctica

    Science.gov (United States)

    Foley, N.; Tulaczyk, S. M.; Gooseff, M. N.; Myers, K. F.; Doran, P. T.; Auken, E.; Dugan, H. A.; Mikucki, J.; Virginia, R. A.

    2017-12-01

    In the McMurdo Dry Valleys (MDV), permafrost should be thick and liquid water rare. However, despite the well below zero mean annual temperature in this cryospheric desert, liquid water can be found in lakes, summer melt streams, subglacial outflow, and - recent work has shown - underneath anomalously thin permafrost. In part, this niche hydrosphere is maintained by the presence of salts, which depress the freezing point of water to perhaps as cold as -10° Celsius. We detected widespread salty water across the MDV in lakes and at depth using a helicopter-borne Time Domain Electromagnetic (TDEM) sensor. By using the presence of brines to mark the transition from frozen permafrost (near the surface) to unfrozen ground (at depth), we have created a map of permafrost thickness in Lower Taylor Valley (LTV), a large MDV with a complex history of glaciation and occupation by lakes. Our results show that permafrost is thinner ( 200m) than would be expected based on geothermal gradient measurements (up to 1000m), a result of the freezing point depression caused by salt and potentially enhanced by an unfinished transient freezing process. Near Lake Fryxell, a large, brackish lake in the center of LTV, permafrost is very thin (about 30-40m) and notably more electrically conductive than more distal permafrost. This thin ring of conductive permafrost surrounding the lake basin most likely reflects the high presence of salts in the subsurface, preventing complete freezing. These salts may be a remnant of the salty bottom waters of a historic larger lake (LGM glacially dammed Lake Washburn) or the remnant of salty basal water from a past advance of Taylor Glacier, which now sits many km up-valley but is known to contain brines which currently flow onto the surface and directly into the subsurface aquifer.

  17. Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

    KAUST Repository

    Sarath Kumar, S. R.; Kurra, Narendra; Alshareef, Husam N.

    2015-01-01

    We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

  18. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Directory of Open Access Journals (Sweden)

    M. Morales-Masis

    2014-09-01

    Full Text Available Improving the conductivity of earth-abundant transparent conductive oxides (TCOs remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H2-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H2-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  19. Hydrogen plasma treatment for improved conductivity in amorphous aluminum doped zinc tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Masis, M., E-mail: monica.moralesmasis@epfl.ch; Ding, L.; Dauzou, F. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Jeangros, Q. [Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Hessler-Wyser, A. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Interdisciplinary Centre for Electron Microscopy, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne (Switzerland); Nicolay, S. [Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Ballif, C. [Photovoltaics and Thin-Film Electronics Laboratory (PVLab), Institute of Microengineering (IMT), Ecole Polytechnique Fédérale de Lausanne - EPFL, Rue de la Maladière 71b, CH-2002 Neuchatel (Switzerland); Centre Suisse d’Electronique et de Microtechnique (CSEM) SA, Rue Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland)

    2014-09-01

    Improving the conductivity of earth-abundant transparent conductive oxides (TCOs) remains an important challenge that will facilitate the replacement of indium-based TCOs. Here, we show that a hydrogen (H{sub 2})-plasma post-deposition treatment improves the conductivity of amorphous aluminum-doped zinc tin oxide while retaining its low optical absorption. We found that the H{sub 2}-plasma treatment performed at a substrate temperature of 50 °C reduces the resistivity of the films by 57% and increases the absorptance by only 2%. Additionally, the low substrate temperature delays the known formation of tin particles with the plasma and it allows the application of the process to temperature-sensitive substrates.

  20. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    KAUST Repository

    Kelly, Leah L

    2016-02-12

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

  1. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    KAUST Repository

    Kelly, Leah L; Racke, David A; Schulz, Philip; Li, Hong; Winget, Paul; Kim, Hyungchul; Ndione, Paul; Sigdel, Ajaya K; Bredas, Jean-Luc; Berry, Joseph J; Graham, Samuel; Monti, Oliver L A

    2016-01-01

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

  2. Enhanced high temperature thermoelectric response of sulphuric acid treated conducting polymer thin films

    KAUST Repository

    Sarath Kumar, S. R.

    2015-11-24

    We report the high temperature thermoelectric properties of solution processed pristine and sulphuric acid treated poly(3, 4-ethylenedioxythiophene):poly(4-styrenesulfonate) (or PEDOT:PSS) films. The acid treatment is shown to simultaneously enhance the electrical conductivity and Seebeck coefficient of the metal-like films, resulting in a five-fold increase in thermoelectric power factor (0.052 W/m. K ) at 460 K, compared to the pristine film. By using atomic force micrographs, Raman and impedance spectra and using a series heterogeneous model for electrical conductivity, we demonstrate that acid treatment results in the removal of PSS from the films, leading to the quenching of accumulated charge-induced energy barriers that prevent hopping conduction. The continuous removal of PSS with duration of acid treatment also alters the local band structure of PEDOT:PSS, resulting in simultaneous enhancement in Seebeck coefficient.

  3. There’s no place like Ohm: conduction in oxide thin films

    International Nuclear Information System (INIS)

    Scott, J F

    2014-01-01

    A pedagogical essay is given that alerts researchers to the errors inherent in assigning linear I(V) current–voltage dependences to Ohmic conduction. Such a linear I(V) is necessary but not sufficient, since other mechanisms, including Simmons’ modification of the basic Schottky emission theory, also give linear I(V) at small applied voltages. Discrimination among Ohmic, Schottky, space-charge limited, and other models requires accurate thickness dependence I(d) data, where for Ohmic conduction I = a/d, whereas for interface-limited mechanisms such as Simmons/Schottky, I is nearly independent of d. (fast track communications)

  4. Room-Temperature Voltage Tunable Phonon Thermal Conductivity via Reconfigurable Interfaces in Ferroelectric Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Ihlefeld, Jon F. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Foley, Brian M. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering; Scrymgeour, David A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Michael, Joseph R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); McKenzie, Bonnie B. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Medlin, Douglas L. [Sandia National Laboratories, Livermore, CA; Wallace, Margeaux [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Trolier-McKinstry, Susan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Hopkins, Patrick E. [Univ. of Virginia, Charlottesville, VA (United States). Dept. of Mechanical and Aerospace Engineering

    2015-02-19

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. Here, we demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  5. Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

    Science.gov (United States)

    Ihlefeld, Jon F; Foley, Brian M; Scrymgeour, David A; Michael, Joseph R; McKenzie, Bonnie B; Medlin, Douglas L; Wallace, Margeaux; Trolier-McKinstry, Susan; Hopkins, Patrick E

    2015-03-11

    Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

  6. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    International Nuclear Information System (INIS)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-01-01

    Highlights: •LaNiO 2 films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO 2 . •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO 2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO 2 is isostructural to SrCuO 2 , the parent compound of high-T c Sr 0.9 La 0.1 CuO 2 with T c = 44 K, and has 3d 9 configuration, which is very rare in oxides but common to high-T c copper oxides. The bulk synthesis of LaNiO 2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO 2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO 2 . The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures

  7. Microstructural and conductivity changes induced by annealing of ZnO:B thin films deposited by chemical vapour deposition

    International Nuclear Information System (INIS)

    David, C; Girardeau, T; Paumier, F; Eyidi, D; Guerin, P; Marteau, M; Lacroix, B; Papathanasiou, N; Tinkham, B P

    2011-01-01

    Zinc oxide (ZnO) thin films have attracted much attention in recent years due to progress in crystal growth for a large variety of technological applications including optoelectronics and transparent electrodes in solar cells. Boron (B)-doped ZnO thin films are deposited by low pressure chemical vapour deposition (LPCVD) on Si(100). These films exhibit a strong (002) texture with a pyramidal grain structure. The ZnO films were annealed after growth; the annealing temperature and the atmosphere appear to strongly impact the layer conductivity. This work will first present the modification of the physical properties (carrier concentration, mobility) extracted from the simulation of layer reflection in the infrared range. At low annealing temperatures the mobility increases slightly before decreasing drastically above a temperature close to 250 deg. C. The chemical and structural evolution (XPS, x-ray diffraction) of the films was also studied to identify the relationship between microstructural modifications and the variations observed in the film conductivity. An in situ XRD study during annealing has been performed under air and low pressure conditions. As observed for electrical properties, the microstructural modifications shift to higher temperatures for vacuum annealing.

  8. Electrically conductive aluminum oxide thin film used as cobalt catalyst-support layer in vertically aligned carbon nanotube growth

    International Nuclear Information System (INIS)

    Azam, Mohd Asyadi; Ismail, Syahriza; Mohamad, Noraiham; Isomura, Kazuki; Shimoda, Tatsuya

    2015-01-01

    This paper will present the unique characteristics of aluminum oxide (Al–O) and cobalt catalyst included in aligned carbon nanotube (CNT) electrode system of energy storage device, namely electrochemical capacitor. Electrical conductivity and nanostructure of the thermally oxidized Al–O used as catalyst-support layer in vertically grown single-walled CNTs were studied. Al–O films were characterized by means of current–voltage measurement and high resolution transmission electron microscopy analysis. The Al–O support layer was found to be conductive, with a relatively low resistance and, approximately 20 nm film thickness of Al–O is suggested to be too thin to form insulating barrier. The scanning TEM—annular dark field analysis confirmed that the nanosized cobalt catalyst particles distributed on Al–O surfaces and also embedded inside the Al–O film structure. (paper)

  9. Role of oxygen in enhancing N-type conductivity of CuInS2 thin films

    International Nuclear Information System (INIS)

    Rabeh, M. Ben; Kanzari, M.; Rezig, B.

    2007-01-01

    Post-growth treatments in air atmosphere were performed on CuInS 2 films prepared by the single-source thermal evaporation method. Their effect on the structural, optical and electrical properties of the films was studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), optical reflection and transmission and resistance measurements. The films were annealed from 100 to 350 deg. C in air. The stability of the observed N-type conductivity after annealing depends strongly on the annealing temperature. Indeed it is shown that for annealing temperatures above 200 deg. C the N-type conductivity is stable. The resistance of the N-CuInS 2 thin films correlates well with the corresponding annealing temperature. The samples after annealing have direct bandgap energies of 1.45-1.50 eV

  10. High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

    Science.gov (United States)

    d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

    2017-07-01

    A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20 deposited by wedge-type multi-layer method on a 100 mm diameter sapphire wafer offering more than 300 analysis areas of different ternary alloy compositions.

  11. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  12. Al and Fe co-doped transparent conducting ZnO thin film for mediator-less biosensing application

    Directory of Open Access Journals (Sweden)

    Shibu Saha

    2011-12-01

    Full Text Available Highly c-axis oriented Al and Fe co-doped ZnO (ZAF thin film is prepared by pulsed laser deposition. Fe introduces redox centre along with shallow donor level while Al doping enhances conductivity of ZnO, thus removing the requirement of both mediator and bottom conducting layer in bioelectrode. Model enzyme (glucose oxidase, was immobilized on surface of ZAF matrix. Cyclic voltammetry and photometric assay show that prepared bio-electrode is sensitive to glucose concentration with enhanced response of 0.18 μAmM-1cm-2 and low Km ∼ 2.01 mM. The results illustrate that ZAF is an attractive matrix for realization of miniaturized mediator-less solid state biosensor.

  13. Adhesive Stretchable Printed Conductive Thin Film Patterns on PDMS Surface with an Atmospheric Plasma Treatment.

    Science.gov (United States)

    Li, Chun-Yi; Liao, Ying-Chih

    2016-05-11

    In this study, a plasma surface modification with printing process was developed to fabricate printed flexible conductor patterns or devices directly on polydimethylsiloxane (PDMS) surface. An atmospheric plasma treatment was first used to oxidize the PDMS surface and create a hydrophilic silica surface layer, which was confirmed with photoelectron spectra. The plasma operating parameters, such as gas types and plasma powers, were optimized to obtain surface silica layers with the longest lifetime. Conductive paste with epoxy resin was screen-printed on the plasma-treated PDMS surface to fabricate flexible conductive tracks. As a result of the strong binding forces between epoxy resin and the silica surface layer, the printed patterns showed great adhesion on PDMS and were undamaged after several stringent adhesion tests. The printed conductive tracks showed strong mechanical stability and exhibited great electric conductivity under bending, twisting, and stretching conditions. Finally, a printed pressure sensor with good sensitivity and a fast response time was fabricated to demonstrate the capability of this method for the realization of printed electronic devices.

  14. High Transparent Conductive Aluminum-Doped Zinc Oxide Thin Films by Reactive Co-Sputtering (Postprint)

    Science.gov (United States)

    2016-03-30

    30 Mar 2016. This document contains color . Journal article published in Optical Interference Coatings, 19 Jun 2016. © 2016 Optical Society of...Ahn, Mi-So Lee, Moon-Ho Ham , Woong Lee, Jae-Min Myoung, “Effects of oxygen concentration on the properties of Al-doped ZnO transparent conductive

  15. Conduction mechanisms in thin atomic layer deposited Al2O3 layers

    International Nuclear Information System (INIS)

    Spahr, Holger; Montzka, Sebastian; Reinker, Johannes; Hirschberg, Felix; Kowalsky, Wolfgang; Johannes, Hans-Hermann

    2013-01-01

    Thin Al 2 O 3 layers of 2–135 nm thickness deposited by thermal atomic layer deposition at 80 °C were characterized regarding the current limiting mechanisms by increasing voltage ramp stress. By analyzing the j(U)-characteristics regarding ohmic injection, space charge limited current (SCLC), Schottky-emission, Fowler-Nordheim-tunneling, and Poole-Frenkel-emission, the limiting mechanisms were identified. This was performed by rearranging and plotting the data in a linear scale, such as Schottky-plot, Poole-Frenkel-plot, and Fowler-Nordheim-plot. Linear regression then was applied to the data to extract the values of relative permittivity from Schottky-plot slope and Poole-Frenkel-plot slope. From Fowler-Nordheim-plot slope, the Fowler-Nordheim-energy-barrier was extracted. Example measurements in addition to a statistical overview of the results of all investigated samples are provided. Linear regression was applied to the region of the data that matches the realistic values most. It is concluded that ohmic injection and therefore SCLC only occurs at thicknesses below 12 nm and that the Poole-Frenkel-effect is no significant current limiting process. The extracted Fowler-Nordheim-barriers vary in the range of up to approximately 4 eV but do not show a specific trend. It is discussed whether the negative slope in the Fowler-Nordheim-plot could in some cases be a misinterpreted trap filled limit in the case of space charge limited current

  16. Magnetron sputtered transparent conductive zinc-oxide stabilized amorphous indium oxide thin films on polyethylene terephthalate substrates at ambient temperature

    International Nuclear Information System (INIS)

    Yan, Y.; Zhang, X.-F.; Ding, Y.-T.

    2013-01-01

    Amorphous transparent conducting zinc-oxide stabilized indium oxide thin films, named amorphous indium zinc oxide (a-IZO), were deposited by direct current magnetron sputtering at ambient temperature on flexible polyethylene terephthalate substrates. It has been demonstrated that the electrical resistivity could attain as low as ∼ 5 × 10 −4 Ω cm, which was noticeably lower than amorphous indium tin oxide films prepared at the same condition, while the visible transmittance exceeded 84% with the refractive index of 1.85–2.00. In our experiments, introduction of oxygen gas appeared to be beneficial to the improvement of the transparency and electrical conductivity. Both free carrier absorption and indirect transition were observed and Burstein–Moss effect proved a-IZO to be a degenerated amorphous semiconductor. However, the linear relation between the optical band gap and the band tail width which usually observed in covalent amorphous semiconductor such as a-Si:H was not conserved. Besides, porosity could greatly determine the resistivity and optical constants for the thickness variation at this deposition condition. Furthermore, a broad photoluminescence peak around 510 nm was identified when more than 1.5 sccm oxygen was introduced. - Highlights: ► Highly conducting amorphous zinc-oxide stabilized indium oxide thin films were prepared. ► The films were fabricated on polyethylene terephthalate at ambient temperature. ► Introduction of oxygen can improve the transparency and electrical conductivity. ► The linear relation between optical band gap and band tail width was not conserved

  17. Sputtered tin oxide and titanium oxide thin films as alternative transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Boltz, Janika

    2011-12-12

    Alternative transparent conductive oxides to tin doped indium oxide have been investigated. In this work, antimony doped tin oxide and niobium doped titanium oxide have been studied with the aim to prepare transparent and conductive films. Antimony doped tin oxide and niobium doped titanium oxide belong to different groups of oxides; tin oxide is a soft oxide, while titanium oxide is a hard oxide. Both oxides are isolating materials, in case the stoichiometry is SnO{sub 2} and TiO{sub 2}. In order to achieve transparent and conductive films free carriers have to be generated by oxygen vacancies, by metal ions at interstitial positions in the crystal lattice or by cation doping with Sb or Nb, respectively. Antimony doped tin oxide and niobium doped titanium oxide films have been prepared by reactive direct current magnetron sputtering (dc MS) from metallic targets. The process parameters and the doping concentration in the films have been varied. The films have been electrically, optically and structurally analysed in order to analyse the influence of the process parameters and the doping concentration on the film properties. Post-deposition treatments of the films have been performed in order to improve the film properties. For the deposition of transparent and conductive tin oxide, the dominant parameter during the deposition is the oxygen content in the sputtering gas. The Sb incorporation as doping atoms has a minor influence on the electrical, optical and structural properties. Within a narrow oxygen content in the sputtering gas highly transparent and conductive tin oxide films have been prepared. In this study, the lowest resistivity in the as deposited state is 2.9 m{omega} cm for undoped tin oxide without any postdeposition treatment. The minimum resistivity is related to a transition to crystalline films with the stoichiometry of SnO{sub 2}. At higher oxygen content the films turn out to have a higher resistivity due to an oxygen excess. After post

  18. Thermal design and validation of radiation detector for the ChubuSat-2 micro-satellite with high-thermal-conductive graphite sheets

    Science.gov (United States)

    Park, Daeil; Miyata, Kikuko; Nagano, Hosei

    2017-07-01

    This paper describes thermal design of the radiation detector (RD) for the ChubuSat-2 with the use of high-thermal-conductive materials. ChubuSat-2 satellite is a 50-kg-class micro-satellite joint development with Nagoya University and aerospace companies. The main mission equipment of ChubuSat-2 is a RD to observe neutrons and gamma rays. However, the thermal design of the RD encounters a serious problem, such as no heater for RD and electric circuit alignment constrain. To solve this issue, the RD needs a new thermal design and thermal control for successful space missions. This paper proposes high-thermal-conductive graphite sheets to be used as a flexible radiator fin for the RD. Before the fabrication of the device, the optimal thickness and surface area for the flexible radiator fin were determined by thermal analysis. Consequently, the surface area of flexible radiator fin was determined to be 8.6×104 mm2. To verify the effects of the flexible radiator fin, we constructed a verification model and analyzed the temperature distributions in the RD. Also, the thermal vacuum test was performed using a thermal vacuum chamber, which was evacuated at a pressure of around 10-4 Pa, and its internal temperature was cooled at -80 °C by using a refrigerant. As a result, it has been demonstrated that the flexible radiator fin is effective. And the thermal vacuum test results are presented good correlation with the analysis results.

  19. Effects of crystallinity and impurities on the electrical conductivity of Li–La–Zr–O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Park, Joong Sun, E-mail: parkj@anl.gov [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Chemical Sciences and Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Cheng, Lei [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Material Sciences and Engineering, University of California, Berkeley, CA 94720 (United States); Zorba, Vassilia [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Mehta, Apurva [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Cabana, Jordi [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Department of Chemistry, University of Illinois at Chicago, IL 60607 (United States); Chen, Guoying; Doeff, Marca M.; Richardson, Thomas J. [Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Park, Jung Hoon [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of); Son, Ji-Won [High-Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136–791 (Korea, Republic of); Hong, Wan-Shick, E-mail: wshong@uos.ac.kr [Department of Nano-Science and Technology, University of Seoul, Seoul (Korea, Republic of)

    2015-02-02

    We present a study of the fabrication of thin films from a Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12} (LLZO) target using pulsed laser deposition. The effects of substrate temperatures and impurities on electrochemical properties of the films were investigated. The thin films of Li–La–Zr–O were deposited at room temperature and higher temperatures on a variety of substrates. Deposition above 600 °C resulted in a mixture of cubic and tetragonal phases of LLZO, as well as a La{sub 2}Zr{sub 2}O{sub 7} impurity, and resulted in aluminum enrichment at the surface when Al-containing substrates were used. Films deposited at 600 °C exhibited the highest room temperature conductivity, 1.61 × 10{sup −6} S/cm. The chemical stability toward metallic lithium was also studied using X-ray photoelectron spectroscopy, which showed that the oxidation state of zirconium remained at + 4 following physical contact with heated lithium metal. - Highlights: • Thin film Li–La–Zr–O was deposited by pulsed laser deposition using Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Deposition above 600 °C resulted in cubic and tetragonal phases of Li{sub 7}La{sub 3}Zr{sub 2}O{sub 12}. • Aluminum migration from the substrate to the film surface was observed. • The chemical stability toward lithium was studied by X-ray photoelectron spectroscopy.

  20. Optical and electrical properties of boron doped diamond thin conductive films deposited on fused silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ficek, M.; Sobaszek, M.; Gnyba, M. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Ryl, J. [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Gołuński, Ł. [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Smietana, M.; Jasiński, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw (Poland); Caban, P. [Institute of Electronic Materials Technology, 133 Wolczynska St., 01-919 Warsaw (Poland); Bogdanowicz, R., E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Gdansk University of Technology, 11/12G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, CA 91125 (United States)

    2016-11-30

    Highlights: • Growth of 60% of transmittance diamond films with resistivity as low as 48 Ω cm. • Two step seeding process of fused silica: plasma hydrogenation and wet seeding. • Nanodiamond seeding density of 2 × 10{sup 10} cm{sup −2} at fused silica substrates. • High refractive index (2.4 @550 nm) was achieved for BDD films deposited at 500 °C. - Abstract: This paper presents boron-doped diamond (BDD) film as a conductive coating for optical and electronic purposes. Seeding and growth processes of thin diamond films on fused silica have been investigated. Growth processes of thin diamond films on fused silica were investigated at various boron doping level and methane admixture. Two step pre-treatment procedure of fused silica substrate was applied to achieve high seeding density. First, the substrates undergo the hydrogen plasma treatment then spin-coating seeding using a dispersion consisting of detonation nanodiamond in dimethyl sulfoxide with polyvinyl alcohol was applied. Such an approach results in seeding density of 2 × 10{sup 10} cm{sup −2}. The scanning electron microscopy images showed homogenous, continuous and polycrystalline surface morphology with minimal grain size of 200 nm for highly boron doped films. The sp{sup 3}/sp{sup 2} ratio was calculated using Raman spectra deconvolution method. A high refractive index (range of 2.0–2.4 @550 nm) was achieved for BDD films deposited at 500 °C. The values of extinction coefficient were below 0.1 at λ = 550 nm, indicating low absorption of the film. The fabricated BDD thin films displayed resistivity below 48 Ohm cm and transmittance over 60% in the visible wavelength range.

  1. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  2. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  3. Improved conductivity of infinite-layer LaNiO2 thin films by metal organic decomposition

    Science.gov (United States)

    Ikeda, Ai; Manabe, Takaaki; Naito, Michio

    2013-12-01

    Infinite-layer LaNiO2 thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO2 is isostructural to SrCuO2, the parent compound of high-Tc Sr0.9La0.1CuO2 with Tc = 44 K, and has 3d9 configuration, which is very rare in oxides but common to high-Tc copper oxides. The bulk synthesis of LaNiO2 is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO2 is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO2. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  4. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su

    2011-01-01

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/μc-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of θ i = 0 (normal sputtering) and θ i = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at θ i = 80 show the inclined columnar nanostructures compared to those at θ i = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/μc-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of ∝1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at θ i = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Influence of oblique-angle sputtered transparent conducting oxides on performance of Si-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Department of Electronics and Radio Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of)

    2011-09-15

    The transparent conducting oxide (TCO) films with low-refractive-index (low-n) are fabricated by the oblique-angle sputtering method. By using the experimentally measured physical data of the fabricated low-n TCO films as the simulation parameters, the effect of low-n TCOs on the performance of a-Si:H/{mu}c-Si:H tandem thin film solar cells is investigated using Silvaco ATLAS. The Al-doped zinc oxide, indium tin oxide (ITO), and Sb-doped tin oxide films are deposited at the flux incidence angles of {theta}{sub i} = 0 (normal sputtering) and {theta}{sub i} = 80 from the sputtering target during the sputtering process. The oblique-angle sputtered films at {theta}{sub i} = 80 show the inclined columnar nanostructures compared to those at {theta}{sub i} = 0 , modifying the optical properties of the films. This is caused mainly by the increase of porosity within the film which leads to its low-n characteristics. The a-Si:H/{mu}c-Si:H tandem thin film solar cell incorporated with the low-n ITO film exhibits an improvement in the conversion efficiency of {proportional_to}1% under AM1.5g illumination because of its higher transmittance and lower absorption compared to that with the ITO film at {theta}{sub i} = 0 , indicating a conversion efficiency of 13.75%. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Science.gov (United States)

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  7. Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

    International Nuclear Information System (INIS)

    Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

    2005-01-01

    As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

  8. Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

    International Nuclear Information System (INIS)

    Koroesi, Laszlo; Papp, Szilvia; Dekany, Imre

    2011-01-01

    Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl 3 , SnCl 4 and NH 3 solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ∼ 40-1160 nm. After calcination at 550 o C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.

  9. Measurement of the surface susceptibility and the surface conductivity of atomically thin by spectroscopic ellipsometry

    KAUST Repository

    Jayaswal, Gaurav; Dai, Zhenyu; Zhang, Xixiang; Bagnarol, Mirko; Martucci, Alessandro; Merano, Michele

    2017-01-01

    We show how to correctly extract from the ellipsometric data the surface susceptibility and the surface conductivity that describe the optical properties of monolayer $\\rm MoS_2$. Theoretically, these parameters stem from modelling a single-layer two-dimensional crystal as a surface current, a truly two-dimensional model. Currently experimental practice is to consider this model equivalent to a homogeneous slab with an effective thickness given by the interlayer spacing of the exfoliating bulk material. We prove that the error in the evaluation of the surface susceptibility of monolayer $\\rm MoS_2$, owing to the use of the slab model, is at least 10% or greater, a significant discrepancy in the determination of the optical properties of this material.

  10. Microsputterer with integrated ion-drag focusing for additive manufacturing of thin, narrow conductive lines

    Science.gov (United States)

    Kornbluth, Y. S.; Mathews, R. H.; Parameswaran, L.; Racz, L. M.; Velásquez-García, L. F.

    2018-04-01

    We report the design, modelling, and proof-of-concept demonstration of a continuously fed, atmospheric-pressure microplasma metal sputterer that is capable of printing conductive lines narrower than the width of the target without the need for post-processing or lithographic patterning. Ion drag-induced focusing is harnessed to print narrow lines; the focusing mechanism is modelled via COMSOL Multiphysics simulations and validated with experiments. A microplasma sputter head with gold target is constructed and used to deposit imprints with minimum feature sizes as narrow as 9 µm, roughness as small as 55 nm, and electrical resistivity as low as 1.1 µΩ · m.

  11. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    International Nuclear Information System (INIS)

    Alam, M. T.; Haque, M. A.; Bresnehan, M. S.; Robinson, J. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m −1 K −1 , is lower than the bulk basal plane value (390 W m −1 K −1 ) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics

  12. Measurement of the surface susceptibility and the surface conductivity of atomically thin by spectroscopic ellipsometry

    KAUST Repository

    Jayaswal, Gaurav

    2017-10-01

    We show how to correctly extract from the ellipsometric data the surface susceptibility and the surface conductivity that describe the optical properties of monolayer $\\ m MoS_2$. Theoretically, these parameters stem from modelling a single-layer two-dimensional crystal as a surface current, a truly two-dimensional model. Currently experimental practice is to consider this model equivalent to a homogeneous slab with an effective thickness given by the interlayer spacing of the exfoliating bulk material. We prove that the error in the evaluation of the surface susceptibility of monolayer $\\ m MoS_2$, owing to the use of the slab model, is at least 10% or greater, a significant discrepancy in the determination of the optical properties of this material.

  13. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    Science.gov (United States)

    Huang, Yanwei; Zhang, Qun; Xi, Junhua; Ji, Zhenguo

    2012-07-01

    Transparent p-type Li0.25Ni0.75O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li0.25Ni0.75O/n-SnO2:W was fabricated by depositing n-SnO2:W on top of the p-Li0.25Ni0.75O, which exhibits typical rectifying current-voltage characteristics.

  14. Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition

    International Nuclear Information System (INIS)

    Huang Yanwei; Zhang Qun; Xi Junhua; Ji Zhenguo

    2012-01-01

    Transparent p-type Li 0.25 Ni 0.75 O conductive thin films were prepared on conventional glass substrates by pulsed plasma deposition. The effects of substrate temperature and oxygen pressure on structural, electrical and optical properties of the films were investigated. The electrical resistivity decreases initially and increases subsequently as the substrate temperature increases. As the oxygen pressure increases, the electrical resistivity decreases monotonically. The possible physical mechanism was discussed. And a hetero p-n junction of p-Li 0.25 Ni 0.75 O/n-SnO 2 :W was fabricated by depositing n-SnO 2 :W on top of the p-Li 0.25 Ni 0.75 O, which exhibits typical rectifying current-voltage characteristics.

  15. Quantum corrections to temperature dependent electrical conductivity of ZnO thin films degenerately doped with Si

    International Nuclear Information System (INIS)

    Das, Amit K.; Ajimsha, R. S.; Kukreja, L. M.

    2014-01-01

    ZnO thin films degenerately doped with Si (Si x Zn 1−x O) in the concentrations range of ∼0.5% to 5.8% were grown by sequential pulsed laser deposition on sapphire substrates at 400 °C. The temperature dependent resistivity measurements in the range from 300 to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the 0.5%, 3.8%, and 5.8% doped Si x Zn 1−x O films in the entire temperature range. On the contrary, the Si x Zn 1−x O films with Si concentrations of 1.0%, 1.7%, and 2.0% showed a transition from negative to positive TCR with increasing temperature. These observations were explained using weak localization based quantum corrections to conductivity

  16. Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

    2015-07-01

    Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

  17. Wide-range measurement of thermal effusivity using molybdenum thin film with low thermal conductivity for thermal microscopes

    Science.gov (United States)

    Miyake, Shugo; Matsui, Genzou; Ohta, Hiromichi; Hatori, Kimihito; Taguchi, Kohei; Yamamoto, Suguru

    2017-07-01

    Thermal microscopes are a useful technology to investigate the spatial distribution of the thermal transport properties of various materials. However, for high thermal effusivity materials, the estimated values of thermophysical parameters based on the conventional 1D heat flow model are known to be higher than the values of materials in the literature. Here, we present a new procedure to solve the problem which calculates the theoretical temperature response with the 3D heat flow and measures reference materials which involve known values of thermal effusivity and heat capacity. In general, a complicated numerical iterative method and many thermophysical parameters are required for the calculation in the 3D heat flow model. Here, we devised a simple procedure by using a molybdenum (Mo) thin film with low thermal conductivity on the sample surface, enabling us to measure over a wide thermal effusivity range for various materials.

  18. Post-deposition thermal treatment of sprayed ZnO:Al thin films for enhancing the conductivity

    Science.gov (United States)

    Devasia, Sebin; Athma, P. V.; Shaji, Manu; Kumar, M. C. Santhosh; Anila, E. I.

    2018-03-01

    Here, we report the enhanced conductivity of Aluminium doped (2at.%) zinc oxide thin films prepared by simple spray pyrolysis technique. The structural, optical, electrical, morphological and compositional investigations confirm the better quality of films that can be a potential candidate for application in transparent electronics. Most importantly, the film demonstrates an average transmittance of 90 percent with a low resistivity value which was dropped from 1.39 × 10-2 to 5.10 × 10-3 Ω .cm, after annealing, and a very high carrier concentration in the order of 10 × 20cm-3. Further, we have used the Swanepoel envelop method to calculate thickness, refractive index and extinction coefficient from the interference patterns observed in the transmission spectra. The calculated figure of merit of the as-deposited sample was 1.4 × 10-3Ω-1 which was improved to 2.5 × 10-3Ω-1 after annealing.

  19. Temperature Dependence on Structural, Tribological, and Electrical Properties of Sputtered Conductive Carbon Thin Films

    International Nuclear Information System (INIS)

    Park, Yong Seob; Hong, Byung You; Cho, Sang Jin; Boo, Jin Hyo

    2011-01-01

    Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 .deg. C to 700 .deg. C in increments of 100 .deg. C using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from 4.5 x 10 -3 to 1.0 x 10 -6 Ω-cm and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp 2 bonding fraction and ordering sp 2 clusters in the carbon networks caused by increasing annealing temperature

  20. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Gudage, Y G [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Ghosh, A [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India); Vyas, J C [Technical and Prototype Engineering Division, Bhabha Atomic Research Center, Trombay, Mumbai (MS) (India); Singh, F [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Tripathi, A [Inter-University Accelerator Center, Aruna Asaf Ali Marg, Post Box 10502, New Delhi 110067 (India); Sharma, Ramphal [Thin Film and Nanotechnology Laboratory, Department of Physics, Dr Babasaheb Ambedkar Marathwada University, Aurangabad-431004 (MS) (India)

    2008-02-07

    We have examined the effect of swift heavy ions using 100 MeV Au{sup 8+} ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10{sup -4} {omega} cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications.

  1. Studies on high electronic energy deposition in transparent conducting indium tin oxide thin films

    International Nuclear Information System (INIS)

    Deshpande, N G; Gudage, Y G; Ghosh, A; Vyas, J C; Singh, F; Tripathi, A; Sharma, Ramphal

    2008-01-01

    We have examined the effect of swift heavy ions using 100 MeV Au 8+ ions on the electrical properties of transparent, conducting indium tin oxide polycrystalline films with resistivity of 0.58 x 10 -4 Ω cm and optical transmission greater than 78% (pristine). We report on the modifications occurring after high electronic energy deposition. With the increase in fluency, x-ray line intensity of the peaks corresponding to the planes (1 1 0), (4 0 0), (4 4 1) increased, while (3 3 1) remained constant. Surface morphological studies showed a pomegranate structure of pristine samples, which was highly disturbed with a high dose of irradiation. For the high dose, there was a formation of small spherical domes uniformly distributed over the entire surface. The transmittance was seen to be decreasing with the increase in ion fluency. At higher doses, the resistivity and photoluminescence intensity was seen to be decreased. In addition, the carrier concentration was seen to be increased, which was in accordance with the decrease in resistivity. The observed modifications after high electronic energy deposition in these films may lead to fruitful device applications

  2. Improved conductivity of infinite-layer LaNiO{sub 2} thin films by metal organic decomposition

    Energy Technology Data Exchange (ETDEWEB)

    Ikeda, Ai [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan); Research Fellow of the Japan Society for the Promotion of Science (Japan); Manabe, Takaaki [National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8565 (Japan); Naito, Michio, E-mail: minaito@cc.tuat.ac.jp [Department of Applied Physics, Tokyo University of Agriculture and Technology, Naka-cho 2-24-16, Koganei, Tokyo 184-8588 (Japan)

    2013-12-15

    Highlights: •LaNiO{sub 2} films were synthesized by metal organic decomposition and topotactic reduction. •Room-temperature resistivity as low as 0.6 mΩ cm was achieved for infinite-layer LaNiO{sub 2}. •Lattice matched substrates are important in obtaining high conductivity. -- Abstract: Infinite-layer LaNiO{sub 2} thin films were synthesized by metal organic decomposition and subsequent topotactic reduction in hydrogen, and their transport properties were investigated. LaNiO{sub 2} is isostructural to SrCuO{sub 2}, the parent compound of high-T{sub c} Sr{sub 0.9}La{sub 0.1}CuO{sub 2} with T{sub c} = 44 K, and has 3d{sup 9} configuration, which is very rare in oxides but common to high-T{sub c} copper oxides. The bulk synthesis of LaNiO{sub 2} is not easy, but we demonstrate in this article that the thin-film synthesis of LaNiO{sub 2} is rather easy, thanks to a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Our refined synthesis conditions produced highly conducting films of LaNiO{sub 2}. The resistivity of the best film is as low as 640 μΩ cm at 295 K and decreases with temperature down to 230 K but it shows a gradual upturn at lower temperatures.

  3. High conductivity and transparent aluminum-based multi-layer source/drain electrodes for thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zhang, Hongke; Fang, Zhiqiang; Ning, Honglong; Zheng, Zeke; Li, Xiaoqing; Zhang, Xiaochen; Cai, Wei; Lu, Xubing; Peng, Junbiao

    2018-02-01

    In this study, high conductivity and transparent multi-layer (AZO/Al/AZO-/Al/AZO) source/drain (S/D) electrodes for thin film transistors were fabricated via conventional physical vapor deposition approaches, without toxic elements or further thermal annealing process. The 68 nm-thick multi-layer films with excellent optical properties (transparency: 82.64%), good electrical properties (resistivity: 6.64  ×  10-5 Ω m, work function: 3.95 eV), and superior surface roughness (R q   =  0.757 nm with scanning area of 5  ×  5 µm2) were fabricated as the S/D electrodes. Significantly, comprehensive performances of AZO films are enhanced by the insertion of ultra-thin Al layers. The optimal transparent TFT with this multi-layer S/D electrodes exhibited a decent electrical performance with a saturation mobility (µ sat) of 3.2 cm2 V-1 s-1, an I on/I off ratio of 1.59  ×  106, a subthreshold swing of 1.05 V/decade. The contact resistance of AZO/Al/AZO/Al/AZO multi-layer electrodes is as low as 0.29 MΩ. Moreover, the average visible light transmittance of the unpatterned multi-layers constituting a whole transparent TFT could reach 72.5%. The high conductivity and transparent multi-layer S/D electrodes for transparent TFTs possessed great potential for the applications of the green and transparent displays industry.

  4. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  5. A NEW TREND IN MAGNETIC-PULSE METAL WORKING ASSOCIATED WITH THIN-WALLED SHEET METAL ATTRACTION. HISTORY AND DEVELOPMENT PROSPECTS

    Directory of Open Access Journals (Sweden)

    A.V. Gnatov

    2013-04-01

    Full Text Available Within the scope of this article, a summary is presented on the main world achievements of the new trend in magnetic-pulse metal working associated with attraction of specified sheet metal sections in vehicle production and repair. The importance of the new trend has been justified, its basic sources disclosed. Alternative straightening methods for damaged sheet metals are given.

  6. Experimental Research on the Impact of Thin-Wall Ratio and the Fillet Radius of Forming Roller on the Limiting Spinning Ratio of AMS 5504 Sheets

    Directory of Open Access Journals (Sweden)

    Kut S.

    2017-12-01

    Full Text Available Results of experimental investigations of metal spinning process of AMS 5504 sheets. cylindrical drawpieces with use of discs-shaped sheet with various diameter and thickness were shown in this work. Tests were performed on two roller metal spinning machine of a vertical axis Leifeld SFC 800 V500.

  7. Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

    Science.gov (United States)

    Zhu, Jiayi; He, Junhui

    2012-05-01

    We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

  8. Conductivity of CH{sub 3}NH{sub 3}PbI{sub 3} thin film perovskite stored in ambient atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Gebremichael, Bizuneh, E-mail: bizunehme@gmail.com [Physics Department, Addis Ababa University, Addis Ababa, P.O. Box 1176 (Ethiopia); Alemu, Getachew [Physics Department, Addis Ababa University, Addis Ababa, P.O. Box 1176 (Ethiopia); Tessema Mola, Genene [School of Chemistry & Physics, University of KwaZulu-Nat al, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209 (South Africa)

    2017-06-01

    Time dependent conductivity loss in CH{sub 3}NH{sub 3}PbI{sub 3} thin film perovskite stored in ambient atmosphere were studied based on electrical and optical measurements. Recent investigations on thin film perovskite solar cell suggest that in the steady state operation of the device, the V{sub oc} is unchanged by continuous illumination of light. Rather the reduction in the power conversion efficiency is caused by significant reduction of the short circuit current (J{sub sc}). In this paper, the effect of light on the optical absorption and electrical conductivity of the CH{sub 3}NH{sub 3}PbI{sub 3} thin film which is deposited on a glass substrate is investigated. The temperature dependent conductivity measurements indicated that the dominant conduction mechanism in the film perovskite is electronic rather than ionic.

  9. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    International Nuclear Information System (INIS)

    Panky, Sreedevi; Thandavan, Kavitha; Sivalingam, Durgajanani; Sethuraman, Swaminathan; Krishnan, Uma Maheswari; Jeyaprakash, Beri Gopalakrishnan; Rayappan, John Bosco Balaguru

    2013-01-01

    Nanostructured cerium oxide (CeO 2 ) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO 3 ) 3 ·6H 2 O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO 2 and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film to form the lipase/nano-CeO 2 /TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO 2 /TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO 2 /TCO film and hence the lipase/nano-CeO 2 /TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33–1.98 mM) with a lowest detection limit of 2 μM with sharp response time of 5 s and a shelf life of about 6

  10. Lipase immobilized on nanostructured cerium oxide thin film coated on transparent conducting oxide electrode for butyrin sensing

    Energy Technology Data Exchange (ETDEWEB)

    Panky, Sreedevi; Thandavan, Kavitha [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sivalingam, Durgajanani [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Sethuraman, Swaminathan; Krishnan, Uma Maheswari [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Chemical and Biotechnology, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Jeyaprakash, Beri Gopalakrishnan [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India); Rayappan, John Bosco Balaguru, E-mail: rjbosco@ece.sastra.edu [Centre for Nanotechnology and Advanced Biomaterials (CeNTAB), SASTRA University, Thanjavur 613 401, Tamil Nadu (India); School of Electrical and Electronics Engineering, SASTRA University, Thanjavur 613 401, Tamil Nadu (India)

    2013-01-15

    Nanostructured cerium oxide (CeO{sub 2}) thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique with cerium nitrate salt, Ce(NO{sub 3}){sub 3}{center_dot}6H{sub 2}O as precursor. Fluorine doped cadmium oxide (CdO:F) thin film prepared using spray pyrolysis technique acts as the TCO film and hence the bare electrode. The structural, morphological and elemental characterizations of the films were carried out using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray analysis (EDX) respectively. The diffraction peak positions in XRD confirmed the formation of highly crystalline ceria with cubic structure and FE-SEM images showed uniform adherent films with granular morphology. The band gaps of CeO{sub 2} and TCO were found to be 3.2 eV and 2.6 eV respectively. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film to form the lipase/nano-CeO{sub 2}/TCO bioelectrode. Sensing studies were carried out using cyclic voltammetry and amperometry, with lipase/nano-CeO{sub 2}/TCO as working electrode and tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp response time of 5 s and a shelf life of about 6 weeks. -- Graphical abstract: Nanostructured cerium oxide thin films were deposited on transparent conducting oxide (TCO) substrate using spray pyrolysis technique. Fluorine doped cadmium oxide (CdO:F) thin film acts as the TCO film and hence the working electrode. Lipase enzyme was physisorbed on the surface of CeO{sub 2}/TCO film and hence the lipase/nano-CeO{sub 2}/TCO bioelectrode has been fabricated. Sensing studies were carried out using cyclic voltammetry and amperometry with tributyrin as substrate. The mediator-free biosensor with nanointerface exhibited excellent linearity (0.33-1.98 mM) with a lowest detection limit of 2 {mu}M with sharp

  11. Electrical conduction studies of hot wall deposited CdSe{sub x}Te{sub 1-x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore 641014 (India); Balasundaraprabhu, R.; Jayakumar, S.; Kannan, M.D. [Department of Physics, PSG College of Technology, Coimbatore (India)

    2008-08-15

    CdSe{sub x}Te{sub 1-x} thin films of different compositions have been deposited on cleaned glass substrates using the hot wall deposition technique under conditions very close to thermodynamical equilibrium with minimum loss of material. The electrical conductivity of the deposited films has been studied as a function of temperature. All the films showed a transition from phonon-assisted hopping conduction through the impurity band to grain-boundary-limited conduction in the conduction/valence band at temperature around 325 K. The conductivity has been found to vary with composition; it varied from 0.0027 to 0.0198 {omega}{sup -1} cm{sup -1} when x changed from 0 to 1. The activation energies of the films of different compositions determined at 225 and 400 K have been observed to lie in the range 0.0031-0.0098 and 0.0285-0.0750 eV, respectively. The Hall-effect studies carried out on the deposited films revealed that the nature of conductivity (p or n-type) was dependent on film composition; films with composition x=0 and 0.15 have been found to be p-type and the ones with composition x=0.4, 0.6, 0.7, 0.85 and 1 have been observed to exhibit n-type conductivity. The carrier concentration has been determined and is of the order of 10{sup 17} cm{sup -3}. The majority of carrier mobilities of the films have been observed to vary from 0.032 to 0.183 cm{sup 2} V{sup -1} s{sup -1} depending on film composition. The study of the mobility of the charge carriers with temperature in the range of 300-450 K showed that the mobility increased with 3/2 power of temperature indicating that the type of scattering mechanism in the studied temperature range is the ionized impurity scattering mechanism. (author)

  12. Decontamination sheet

    International Nuclear Information System (INIS)

    Hirose, Emiko; Kanesaki, Ken.

    1995-01-01

    The decontamination sheet of the present invention is formed by applying an adhesive on one surface of a polymer sheet and releasably appending a plurality of curing sheets. In addition, perforated lines are formed on the sheet, and a decontaminating agent is incorporated in the adhesive. This can reduce the number of curing operation steps when a plurality steps of operations for radiation decontamination equipments are performed, and further, the amount of wastes of the cured sheets, and operator's exposure are reduced, as well as an efficiency of the curing operation can be improved, and propagation of contamination can be prevented. (T.M.)

  13. Fast for sure: new developments in laser beam cutting of thin sheet metal; Mit Sicherheit schnell: neue Entwicklungen zum Laserstrahlschneiden von Fein- und Feinstblechen

    Energy Technology Data Exchange (ETDEWEB)

    Petring, D.; Schneider, F.; Thelen, C.; Poprawe, R.l [Fraunhofer-Institut fuer Lasertechnik (ILT), Aachen (Germany)

    1999-04-01

    Presently laser beam cutting is a rapidly developing technology. New laser sources with higher power and improved beam quality as well as the modern drive and control equipment together with advanced process developments allow a significant increase in cutting speed at excellent quality features. Recent results in laser beam slitting of sheet metal coils and in fast cutting of car body sheets illustrate this trend. It will be continued be even higher powers and new types of lasers. (orig.)

  14. Development in fiscal 1999 of technologies to put photovoltaic power generation systems into practical use. Development of thin film solar cell manufacturing technologies (Development of technologies to manufacture applied type thin film solar cells with new structure and development of high-efficiency hybrid thin film/sheet solar cells); 1999 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Usumaku taiyo denchi no seizo gijutsu kaihatsu (oyogata shin kozo usumaku taiyo denchi no seizo gijutsu kaihatsu (kokoritsu hybrid gata usumaku / sheet taiyo denchi no seizo gijutsu kaihatsu))

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    With an objective to develop low-cost and high-efficiency hybrid thin film/sheet solar cells, research and development has been performed. This paper summarizes the achievements in fiscal 1999. The research is related to a hybrid construction, in which the upper cells of amorphous silicon thin film are formed on the lower cells bonded with micro-crystalline silicon thin film relative to a poly-crystalline silicon sheet. In the technology to form the upper cells, a pin-construction using amorphous silicon thin film made by using the plasma CVD process was adopted, whereas an open circuit voltage of 1.45V, a short circuit current of 13.6 mA/cm{sup 2}, and a conversion efficiency of 13.5% were obtained. In the technology to form the substrate for the lower cells, formation of flat silicon thin plate that can be peeled off was identified as a result of adopting the construction in which a graphite substrate is provided on a rotating cooling body of 12-prism type. With regard to the technology to bond and form the lower cells, electrical properties of hetero-bonded cells were discussed, and an open circuit voltage of 0.605V and a conversion efficiency of 14.3% were obtained as a result of enhancing the film quality and optimizing the film thickness. (NEDO)

  15. Simultaneous measurement of thermal conductivity and heat capacity of bulk and thin film materials using frequency-dependent transient thermoreflectance method.

    Science.gov (United States)

    Liu, Jun; Zhu, Jie; Tian, Miao; Gu, Xiaokun; Schmidt, Aaron; Yang, Ronggui

    2013-03-01

    The increasing interest in the extraordinary thermal properties of nanostructures has led to the development of various measurement techniques. Transient thermoreflectance method has emerged as a reliable measurement technique for thermal conductivity of thin films. In this method, the determination of thermal conductivity usually relies much on the accuracy of heat capacity input. For new nanoscale materials with unknown or less-understood thermal properties, it is either questionable to assume bulk heat capacity for nanostructures or difficult to obtain the bulk form of those materials for a conventional heat capacity measurement. In this paper, we describe a technique for simultaneous measurement of thermal conductivity κ and volumetric heat capacity C of both bulk and thin film materials using frequency-dependent time-domain thermoreflectance (TDTR) signals. The heat transfer model is analyzed first to find how different combinations of κ and C determine the frequency-dependent TDTR signals. Simultaneous measurement of thermal conductivity and volumetric heat capacity is then demonstrated with bulk Si and thin film SiO2 samples using frequency-dependent TDTR measurement. This method is further testified by measuring both thermal conductivity and volumetric heat capacity of novel hybrid organic-inorganic thin films fabricated using the atomic∕molecular layer deposition. Simultaneous measurement of thermal conductivity and heat capacity can significantly shorten the development∕discovery cycle of novel materials.

  16. Atomic mapping of Ruddlesden-Popper faults in transparent conducting BaSnO3-based thin films.

    Science.gov (United States)

    Wang, W Y; Tang, Y L; Zhu, Y L; Suriyaprakash, J; Xu, Y B; Liu, Y; Gao, B; Cheong, S-W; Ma, X L

    2015-11-03

    Doped BaSnO3 has arisen many interests recently as one of the promising transparent conducting oxides for future applications. Understanding the microstructural characteristics are crucial for the exploration of relevant devices. In this paper, we investigated the microstructural features of 0.001% La doped BaSnO3 thin film using both conventional and aberration corrected transmission electron microscopes. Contrast analysis shows high densities of Ruddlesden-Popper faults in the film, which are on {100} planes with translational displacements of 1/2a  . Atomic EELS element mappings reveal that the Ruddlesden-Popper faults are Ba-O layer terminated, and two kinds of kink structures at the Ruddlesden-Popper faults with different element distributions are also demonstrated. Quantitative analysis on lattice distortions of the Ruddlesden-Popper faults illustrates that the local lattice spacing poses a huge increment of 36%, indicating that large strains exist around the Ruddlesden-Popper faults in the film.

  17. Measurement and Analysis of Ultra-Thin Austenitic Stainless Steel Sheet under Biaxial Tensile Loading and In-Plane Reverse Loading

    Science.gov (United States)

    Murakoso, Satoko; Kuwabara, Toshihiko

    Biaxial tensile tests of austenitic stainless steel sheet (SUS304) 0.2mm thick have been carried out using cruciform specimens. The specimens are loaded under linear stress paths in a servo-controlled biaxial tensile testing machine. Plastic orthotropy remained coaxial with the principal stresses throughout every experiment. The successive contours of plastic work in biaxial stress space changed their shapes progressively, exemplifying differential work hardening. The geometry of the entire family of the work contours and the directions of plastic strain rates have been precisely measured and compared with those calculated using conventional yield functions. Yld2000-2d [Barlat, F., Brem, J.C., Yoon, J.W., Chung, K., Dick, R.E., Lege, D.J., Pourboghrat, F., Choi, S.H. and Chu, E., International Journal of Plasticity, Vol. 19, (2003), pp. 1297-1319.] with an exponent of 6 was capable of reproducing the general trends of the work contours and the directions of plastic strain rates with good accuracy. Furthermore, in order to quantitatively evaluate the Bauschinger effect of the test material, in-plane tension/compression tests are conducted. It was found that the non-dimensional (σ /σu) - Δɛ /(σu/ E) curves measured during unloading almost fall on a single curve and are not affected by the amount of pre-strain, where σ is the current stress during unloading, σu is the stress immediately before unloading, Δɛ (< 0) is the total strain increment during unloading.

  18. Dynamics of Radially Expanding Liquid Sheets

    Science.gov (United States)

    Majumdar, Nayanika; Tirumkudulu, Mahesh S.

    2018-04-01

    The process of atomization often involves ejecting thin liquid sheets at high speeds from a nozzle that causes the sheet to flap violently and break up into fine droplets. The flapping of the liquid sheet has long been attributed to the sheet's interaction with the surrounding gas phase. Here, we present experimental evidence to the contrary and show that the flapping is caused by the thinning of the liquid sheet as it spreads out from the nozzle exit. The measured growth rates of the waves agree remarkably well with the predictions of a recent theory that accounts for the sheet's thinning but ignores aerodynamic interactions. We anticipate these results to not only lead to more accurate predictions of the final drop-size distribution but also enable more efficient designs of atomizers.

  19. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  20. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    International Nuclear Information System (INIS)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu

    2011-01-01

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10 -4 Ω cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm 2 /Vs and carrier concentrations on the order of 10 20 cm -3 . All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10 -3 -10 -4 Ω cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  1. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  2. The effect of the Grain-Boundary and surface scattering of charge carriers on electrical conductance of thin V and Re films

    International Nuclear Information System (INIS)

    Lakh, Kh.G.; Stasyuk, Z.V.

    1994-01-01

    Size effects in electrical conductivity and the Hall coefficient of thin V and Re films have been investigated. An analysis of experimental data was made within the framework of modified Mayadas -Shatzkes and Tellier - Tosser - Pichard models. The parameters of charge transport for V and Re have been found

  3. Metal-insulator transition in tin doped indium oxide (ITO) thin films: Quantum correction to the electrical conductivity

    OpenAIRE

    Deepak Kumar Kaushik; K. Uday Kumar; A. Subrahmanyam

    2017-01-01

    Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films (prepared at 300 K and subsequently annealed at 673 K in vacuum for 60 minutes) in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kFl∼1; kF is the Fermi wave vector and l ...

  4. Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films

    International Nuclear Information System (INIS)

    Nakamura, D.; Akiike, T.; Takahashi, H.; Nabeshima, F.; Imai, Y.; Maeda, A.; Katase, T.; Hiramatsu, H.; Hosono, H.; Komiya, S.; Tsukada, I.

    2011-01-01

    We investigated the THz conductivity of FeSe 0.5 Te 0.5 and Ba (Fe 2-x Co x )As 2 thin films. We estimated the superconducting gap energy values. We found anomolous conductivity spectrum in the antiferromagnetic phase. The terahertz (THz) conductivity of FeSe 0.5 Te 0.5 ('11'-type) and Co-doped BaFe 2 As 2 ('122'-type) thin films are investigated. For '11'-type, the frequency dependence of the complex conductivity can be understood as that of BCS-type superconductor near the superconducting gap energy, and we estimated the superconducting gap energy to be 0.6 meV. For '122'-type, we estimated the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point.

  5. FY 2000 report on the results of the development of technology for commercialization of the photovoltaic power system - Development of production technology of thin film solar cells. Development of production technology of application type new structure thin film solar cells (Development of production technology of high efficiency hybrid thin films/sheet solar cells); 2000 nendo New sunshine keikaku seika hokokusho. Taiyoko hatsuden system jitsuyoka gijutsu kaihatsu, Hakumaku taiyodenchi no seizo gijutsu kaihatsu, Oyogata shinkozo hakumaku taiyodenchi no seizo gijutsu kaihatsu, (Kokoritsu hybrid gata hakumaku / sheet taiyodenchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    For the purpose of realizing low cost and high efficiency hybrid thin films/sheet solar cells, the R and D were carried out, and the FY 2000 results were reported. As to the formation technology of the upper cell, the following technologies were developed and the results contributory to the heightening of efficiency were obtained: technology for improvement of cell characteristics by gap widening of p layer, technology for optimization of formation conditions of i layer corresponding to the hybrid solar cell, technology for heightening of current by the intermediate ZnO layer just under the upper cell. Relating to the development of formation technology of high quality microcrystal thin films, it was indicated that the microcrystal silicon thin film had the conformity effective also for polycrystal silicon, and at the same time, the conversion efficiency of 12.8% and release voltage of 0.579V were obtained by the cell using the cast polycrystal board. In the thin film/polycrystal sheet hybrid solar cell in which all these technologies were integrated, the conversion efficiency of 12.0% was achieved, and the possibility was verified of achieving the target efficiency of 14% by further improvement of FF. (NEDO)

  6. Effects of laser-induced recovery process on conductive property of SnO2:F thin films

    International Nuclear Information System (INIS)

    Chen, Ming-Fei; Lin, Keh-moh; Ho, Yu-Sen

    2011-01-01

    In this study, we developed a laser annealing process to enhance the electrical properties of SnO 2 :F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 x 10 -3 Ω cm to 6.70 ± 0.20 x 10 -3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm 2 /V s to 11.71 ± 0.34 cm 2 /V s.

  7. Significant efficiency enhancement in thin film solar cells using laser beam-induced graphene transparent conductive electrodes

    OpenAIRE

    Thekkekara, L. V.; Cai, Bouyan

    2018-01-01

    Thin film solar cells have been attractive for decades in advanced green technology platforms due to its possibilities to be integrated with buildings and on-chip applications. However, the bottleneck issues involved to consider the current solar cells as a major electricity source includes the lower efficiencies and cost-effectiveness. We numerically demonstrate the concept of the absorption enhancement in thin-film amorphous silicon solar cells using the laser beam-induced graphene material...

  8. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  9. Preparation and characterization of structures of oxygen-ion-conductive thin-film membranes; Herstellung und Charakterisierung von sauerstoffionenleitenden Duennschichtmembranstrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Betz, Michael

    2010-07-01

    In power plants using Oxyfuel technology, fossil fuels are combusted with pure oxygen. This leads to carbon dioxide of high purity, which is necessary for its transport and storage. Oxygen separation by means of perovskitic membranes have great potential to decrease the efficiency losses caused by the allocation of the enormous amounts of oxygen. The aim of this work is the preparation and characterisation of thin film membranes on porous substrates and the analysis of their oxygen permeation properties. Therefore the material system A{sub 0,68}Sr{sub 0,3}Fe{sub 0,8}Co{sub 0,2}O{sub 3-{delta}} (A68SFC) was analysed, where the A-site was substituted with Lanthanides (La, Pr, Nd, Eu, Sm, Gd, Dy, Er) or alkaline earth metals (Ba, Ca). After an extensive characterisation, the selection was reduced to the substitutions with La, Pr and Nd. Other compounds could not meet the demands with regard to phase purity, chemical stability or extension behaviour. All analyses were conducted in comparison to Ba{sub 0,5}Sr{sub 0,5}Co{sub 0,8}Fe{sub 0,2}O{sub 3-{delta}} (BSCF) which is known to exhibit higher permeation rates, but is more sensitive to stability issues. The dependency of permeation rates on membrane thickness or oxygen partial pressures on both membrane surfaces is discussed by means of permeation measurements conducted on bulk BSCF membranes. These cannot be described completely by the Wagner equation. This is due to changes of the driving force originating from influences of the surface reaction kinetics and concentration polarisation on the membrane surface, which are not considered. Porous substrates for asymmetric membranes were manufactured by tape casting and warm pressing. The application of the functional layer was performed via screen printing. Permeation measurements show that the asymmetric structures exhibit higher permeation rates in comparison to bulk membranes with L=1 mm. The moderate increase can be attributed to the low gas permeability of the

  10. In-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Hartung, David; Gather, Florian; Kronenberger, Achim; Kuhl, Florian; Meyer, Bruno K.; Klar, Peter J. [I. Physikalisches Institut, Justus-Liebig-University, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

    2012-07-01

    In this work we present in-plane thermal conductivity measurements of ZnO-, ZnS-, and YSZ thin-films. Borosilicate glass with a thickness of 50 microns and low thermal conductivity for improving the signal to noise ratio was used as substrate material. The above different films are deposited by rf-sputtering and have a thickness of about 1 micron. Our approach is a steady-state measurement. A wide metal wire on the film is used as a heater and two parallel lying narrow wires at distances of 100 microns and 200 microns from the heater wire, respectively, serve as the temperature sensors. The wire structure design is transfered on to the thin films by photolithography and metal evaporation. Measurements of the in-plane thermal conductivities of the above mentioned materials are presented and compared with corresponding results in the literature.

  11. Global ice sheet modeling

    International Nuclear Information System (INIS)

    Hughes, T.J.; Fastook, J.L.

    1994-05-01

    The University of Maine conducted this study for Pacific Northwest Laboratory (PNL) as part of a global climate modeling task for site characterization of the potential nuclear waste respository site at Yucca Mountain, NV. The purpose of the study was to develop a global ice sheet dynamics model that will forecast the three-dimensional configuration of global ice sheets for specific climate change scenarios. The objective of the third (final) year of the work was to produce ice sheet data for glaciation scenarios covering the next 100,000 years. This was accomplished using both the map-plane and flowband solutions of our time-dependent, finite-element gridpoint model. The theory and equations used to develop the ice sheet models are presented. Three future scenarios were simulated by the model and results are discussed

  12. Single point incremental forming: Formability of PC sheets

    Science.gov (United States)

    Formisano, A.; Boccarusso, L.; Carrino, L.; Lambiase, F.; Minutolo, F. Memola Capece

    2018-05-01

    Recent research on Single Point Incremental Forming of polymers has slightly covered the possibility of expanding the materials capability window of this flexible forming process beyond metals, by demonstrating the workability of thermoplastic polymers at room temperature. Given the different behaviour of polymers compared to metals, different aspects need to be deepened to better understand the behaviour of these materials when incrementally formed. Thus, the aim of the work is to investigate the formability of incrementally formed polycarbonate thin sheets. To this end, an experimental investigation at room temperature was conducted involving formability tests; varying wall angle cone and pyramid frusta were manufactured by processing polycarbonate sheets with different thicknesses and using tools with different diameters, in order to draw conclusions on the formability of polymer sheets through the evaluation of the forming angles and the observation of the failure mechanisms.

  13. Improved approach for determining thin layer thermal conductivity using the 3 ω method. Application to porous Si thermal conductivity in the temperature range 77–300 K

    International Nuclear Information System (INIS)

    Valalaki, K; Nassiopoulou, A G

    2017-01-01

    An improved approach for determining thermal conductivity using the 3 ω method was used to determine anisotropic porous Si thermal conductivity in the temperature range 77–300 K. In this approach, thermal conductivity is extracted from experimental data of the third harmonic of the voltage (3 ω ) as a function of frequency, combined with consequent FEM simulations. The advantage is that within this approach the finite thickness of the sample and the heater are taken into account so that the corresponding errors introduced in thermal conductivity values when using Cahill’s simplified analytical formula are eliminated. The developed method constitutes a useful tool for measuring the thermal conductivity of samples with unknown thermal properties. The thermal conductivity measurements with the 3 ω method are discussed and compared with those obtained using the well-established dc method. (paper)

  14. Fabrication and electrical resistivity of Mo-doped VO2 thin films coated on graphite conductive plates by a sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Choi, W.; Jung, H.M.; Um, S. [Hanyang Univ., Seoul (Korea, Republic of). School of Mechanical Engineering

    2008-07-01

    Vanadium oxides (VO2) can be used in optical devices, thermochromic smart windows and sensors. This paper reported on a study in which vanadium pentoxide (V2O5) powder was prepared and mixed with Molybdenum Oxides (MoO3) to form Mo-doped and -undoped VO2 thin films by a sol-gel method on graphite conductive substrates. The micro-structure and chemical compositions of the Mo-doped and -undoped VO2 thin films was investigated using X-Ray diffraction and scanning electron microscopy. Changes in electrical resistivity were measured as a function of the stoichiometric compositions between vanadium and molybdenum. In this study. Mo-doped and -undoped VO2 thin films showed the typical metal to insulator transition (MIT), where temperature range could be adjusted by modifying the dopant atomic ratio. The through-plane substrate structure of the Mo-doped layer influences the electrical resistivity of the graphite substrate. As the amount of the molybdenum increases, the electrical resistivity of the graphite conductive substrate decreases in the lower temperature range below the freezing point of water. The experimental results showed that if carefully controlled, thermal dissipation of VO2 thin films can be used as a self-heating source to melt frozen water with the electrical current flowing through the graphite substrate. 3 refs., 3 figs.

  15. Transparent and conductive electrodes by large-scale nano-structuring of noble metal thin-films

    DEFF Research Database (Denmark)

    Linnet, Jes; Runge Walther, Anders; Wolff, Christian

    2018-01-01

    grid, and nano-wire thin-films. The indium and carbon films do not match the chemical stability nor the electrical performance of the noble metals, and many metal films are not uniform in material distribution leading to significant surface roughness and randomized transmission haze. We demonstrate...

  16. Local conductivity and the role of vacancies around twin walls of (001)-BiFeO3 thin films

    NARCIS (Netherlands)

    Farokhipoor, S.; Noheda, Beatriz

    2012-01-01

    BiFeO3 thin films epitaxially grown on SrRuO3-buffered (001)-oriented SrTiO3 substrates show orthogonal bundles of twin domains, each of which contains parallel and periodic 71 degrees domain walls. A smaller amount of 109 degrees domain walls are also present at the boundaries between two adjacent

  17. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing

    International Nuclear Information System (INIS)

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-01-01

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10 −2 Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate. (papers)

  18. Electrical conductivity and oxygen exchange kinetics of La2NiO4+delta thin films grown by chemical vapor deposition

    DEFF Research Database (Denmark)

    Garcia, G.; Burriel, M.; Bonanos, Nikolaos

    2008-01-01

    Epitaxial c-axis oriented La2NiO4+delta films were deposited onto SrTiO3 and NdGaO3 substrates by the pulsed injection metal organic chemical vapor deposition technique. Experimental conditions were optimized in order to accurately control the composition, thickness, and texture of the layers. X......-ray diffraction was used to confirm the high crystalline quality of the obtained material. Electrical characterizations were performed on thin (50 nm) and thick (335 nm) layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured (50 nm......), probably due to the effect of the strain present in the layers. Those thin films (50 nm) showed values even larger than those observed for single crystals and, to our knowledge, are the largest conductivity values reported to date for the La2NiO4+delta material. The oxygen exchange kinetics was studied...

  19. Addressing the selectivity issue of cobalt doped zinc oxide thin film iso-butane sensors: Conductance transients and principal component analyses

    Science.gov (United States)

    Ghosh, A.; Majumder, S. B.

    2017-07-01

    Iso-butane (i-C4H10) is one of the major components of liquefied petroleum gas which is used as fuel in domestic and industrial applications. Developing chemi-resistive selective i-C4H10 thin film sensors remains a major challenge. Two strategies were undertaken to differentiate carbon monoxide, hydrogen, and iso-butane gases from the measured conductance transients of cobalt doped zinc oxide thin films. Following the first strategy, the response and recovery transients of conductances in these gas environments are fitted using the Langmuir adsorption kinetic model to estimate the heat of adsorption, response time constant, and activation energies for adsorption (response) and desorption (recovery). Although these test gases have seemingly different vapor densities, molecular diameters, and reactivities, analyzing the estimated heat of adsorption and activation energies (for both adsorption and desorption), we could not differentiate these gases unequivocally. However, we have found that the lower the vapor density, the faster the response time irrespective of the test gas concentration. As a second strategy, we demonstrated that feature extraction of conductance transients (using fast Fourier transformation) in conjunction with the pattern recognition algorithm (principal component analysis) is more fruitful to address the cross-sensitivity of Co doped ZnO thin film sensors. We have found that although the dispersion among different concentrations of hydrogen and carbon monoxide could not be avoided, each of these three gases forms distinct clusters in the plot of principal component 2 versus 1 and therefore could easily be differentiated.

  20. Antibubbles and fine cylindrical sheets of air

    NARCIS (Netherlands)

    Beilharz, D.; Guyon, A.; Li, E.Q.; Thoraval, Marie-Jean; Thoroddsen, S.T.

    2015-01-01

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a

  1. Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

    Science.gov (United States)

    Muslih, E. Y.; Kim, K. H.

    2017-07-01

    Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

  2. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-03-15

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  3. Thin, Conductive, Pyrrolyc film production for radioactive sources backings; Preparacion de peliculas pirrolicas conductoras ultrafinas para soporte de fuentes radiactivas

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez, L; Arcos, J.M. los

    1993-07-01

    A procedure for electro polymerization of pyrrole has been set up in order to produce thin, (> 15 {mu}g/cm2) homogeneous (thickness variation < 2%) films, with no need for additional metallization to be used as backings of radioactive sources, having 10-0,4 Kfl/sample, for 35-70 {mu}g/cm . The experimental equipment, reagent and procedure utilized is described as well as the characterization of Pyrrolyc films produced. (Author) 28 refs.

  4. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-01-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

  5. Full-Wave Analysis of the Shielding Effectiveness of Thin Graphene Sheets with the 3D Unidirectionally Collocated HIE-FDTD Method

    Directory of Open Access Journals (Sweden)

    Arne Van Londersele

    2017-01-01

    Full Text Available Graphene-based electrical components are inherently multiscale, which poses a real challenge for finite-difference time-domain (FDTD solvers due to the stringent time step upper bound. Here, a unidirectionally collocated hybrid implicit-explicit (UCHIE FDTD method is put forward that exploits the planar structure of graphene to increase the time step by implicitizing the critical dimension. The method replaces the traditional Yee discretization by a partially collocated scheme that allows a more accurate numerical description of the material boundaries. Moreover, the UCHIE-FDTD method preserves second-order accuracy even for nonuniform discretization in the direction of collocation. The auxiliary differential equation (ADE approach is used to implement the graphene sheet as a dispersive Drude medium. The finite grid is terminated by a uniaxial perfectly matched layer (UPML to permit open-space simulations. Special care is taken to elaborate on the efficient implementation of the implicit update equations. The UCHIE-FDTD method is validated by computing the shielding effectiveness of a typical graphene sheet.

  6. Phonon thermal conductivity of scandium nitride for thermoelectrics from first-principles calculations and thin-film growth

    DEFF Research Database (Denmark)

    Kerdsongpanya, Sit; Hellman, Olle; Sun, Bo

    2017-01-01

    The knowledge of lattice thermal conductivity of materials under realistic conditions is vitally important since many modern technologies require either high or low thermal conductivity. Here, we propose a theoretical model for determining lattice thermal conductivity, which takes into account......-domain thermoreflectance. Our experimental results show a trend of reduction in lattice thermal conductivity with decreasing domain size predicted by the theoretical model. These results suggest a possibility to control thermal conductivity by microstructural tailoring and provide a predictive tool for the effect...... of the microstructure on the lattice thermal conductivity of materials based on ab initio calculations....

  7. Anatase TiO2 hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

    International Nuclear Information System (INIS)

    Wu, Dapeng; Zhang, Shuo; Jiang, Shiwei; He, Jinjin; Jiang, Kai

    2015-01-01

    Graphical abstract: TiO 2 hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO 2 hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell

  8. Anatase TiO{sub 2} hierarchical structures composed of ultra-thin nano-sheets exposing high percentage {0 0 1} facets and their application in quantum-dot sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dapeng, E-mail: dpengwu@126.com [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China); Zhang, Shuo; Jiang, Shiwei; He, Jinjin [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Jiang, Kai [School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); Collaborative Innovation Center of Henan Province for Green Motive Power and Key Materials, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang, Henan 453007 (China)

    2015-03-05

    Graphical abstract: TiO{sub 2} hierarchical structures assembled from ultra-thin nanosheets exposing ∼90% {0 0 1} facets were employed as photoanode materials to improve the performance of CdS/CdSe co-sensitized solar cells. - Highlights: • THSs composited of nanosheets exposing high percent {0 0 1} facets were prepared. • THSs improve the QDs loading amount and light scattering of the photoanode. • THSs suppress the carrier recombination and finally lead to ∼25% PCE improvement. - Abstract: TiO{sub 2} hierarchical structures (THSs) composed of ultra-thin nano-sheets exposing ∼90% {0 0 1} facets were prepared via a hydrothermal method. Time dependent trails revealed the formation of THSs experienced a self-assemble process. The as-prepared product were used as the photoanode materials for CdS/CdSe co-sensitized solar cells, and the THSs/nanoparticle hybrid photoanode demonstrated a power conversion efficiency of 3.47%, indicating ∼25% improvement compared with the nanoparticle cell.

  9. Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Moriga, Toshihiro; Mikawa, Michio; Sakakibara, Yuji; Misaki, Yukinori; Murai, Kei-ichiro; Nakabayashi, Ichiro; Tominaga, Kikuo; Metson, James B.

    2005-01-01

    Indium-zinc oxide thin films were deposited on a glass substrate from a ZnO and In 2 O 3 mixed target by a pulsed laser deposition technique. The effects on surface texture, structure and transparent conducting properties of the introduction of argon into the chamber during the depositions of amorphous and homologous ZnO-In 2 O 3 thin films were examined. The compositional range where amorphous films formed was widened by the introduction of argon. Resistivity in the region where the amorphous phase appeared increased slightly, with an increase of zinc content, due to the counteractions of decreased Hall mobility and increased carrier concentration. Introduction of argon improved surface roughness of the films and reduced and regulated particle and/or crystallite sizes of the films

  10. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

    2016-02-29

    In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

  11. Low temperature-pyrosol-deposition of aluminum-doped zinc oxide thin films for transparent conducting contacts

    Energy Technology Data Exchange (ETDEWEB)

    Rivera, M.J. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Ramírez, E.B. [Universidad Autónoma de la Ciudad de México, Calle Prolongación San Isidro Núm. 151, Col. San Lorenzo Tezonco, Iztapalapa, 09790 México, D.F. (Mexico); Juárez, B.; González, J.; García-León, J.M. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico); Escobar-Alarcón, L. [Departamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México, D.F. 11801 (Mexico); Alonso, J.C., E-mail: alonso@unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Apartado Postal 70-360, Coyoacán, 04510 México, D.F. (Mexico)

    2016-04-30

    Aluminum doped-zinc oxide (ZnO:Al) thin films with thickness ~ 1000 nm have been deposited by the ultrasonic spray pyrolysis technique using low substrate temperatures in the range from 285 to 360 °C. The electrical and optical properties of the ZnO:Al (AZO) films were investigated by Uv–vis spectroscopy and Hall effect measurements. The crystallinity and morphology of the films were analyzed using X-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution scanning electron microcopy (SEM). XRD results reveal that all the films are nanocrystalline with a hexagonal wurtzite structure with a preferential orientation in the (002) plane. The size of the grains calculated from Scherrer's formula was in the range from 28 to 35 nm. AFM and SEM analysis reveals that the grains form round and hexagonal shaped aggregates at high deposition temperatures and larger rice shaped aggregates at low temperatures. All the films have a high optical transparency (~ 82%). According to the Hall measurements the AZO films deposited at 360 and 340 °C had resistivities of 2.2 × 10{sup −3}–4.3 × 10{sup −3} Ω cm, respectively. These films were n-type and had carrier concentrations and mobilities of 3.71–2.54 × 10{sup 20} cm{sup −3} and 7.4–5.7 cm{sup 2}/V s, respectively. The figure of merit of these films as transparent conductors was in the range of 2.6 × 10{sup −2} Ω{sup −1}–4.1 × 10{sup −2} Ω{sup −1}. Films deposited at 300 °C and 285 °C, had much higher resistivities. Based on the thermogravimetric analysis of the individual precursors used for film deposition, we speculate on possible film growing mechanisms that can explain the composition and electrical properties of films deposited under the two different ranges of temperatures. - Highlights: • Aluminum doped zinc oxide thin films were deposited at low temperatures by pyrosol. • Low resistivity was achieved from 340 °C substrate temperature. • All films deposited

  12. In-plane conductance of thin films as a probe of surface chemical environment: Adsorbate effects on film electronic properties of indium tin oxide and gold

    Science.gov (United States)

    Swint, Amy Lynn

    Changes in the in-plane conductance of conductive thin films are observed as a result of chemical adsorption at the surface. Reaction of the indium tin oxide (ITO) surface with Bronsted acids (bases) leads to increases (decreases) in its in-plane conductance as measured by a four-point probe configuration. The conductance varies monotonically with pH suggesting that the degree of surface protonation or hydroxylation controls the surface charge density, which in turn affects the width of the n-type depletion layer, and ultimately the in-plane conductance. Measurements at constant pH with a series of tetraalkylammonium hydroxide species of varying cation size indicate that surface dipoles also affect ITO conductance by modulating the magnitude of the surface polarization. Modulating the double layer with varying aqueous salt solutions also affects ITO conductance, though not to the same degree as strong Bronsted acids and bases. Solvents of varying dielectric constant and proton donating ability (ethanol, dimethylformamide) decrease ITO conductance relative to H2O. In addition, changing solvent gives rise to thermally-derived conductance transients, which result from exothermic solvent mixing. The self-assembly of alkanethiols at the surface increases the conductance of ITO films, most likely through carrier population effects. In all cases examined the combined effects of surface charge, adsorbed dipole layer magnitude and carrier injection are responsible for altering the ITO conductance. Besides being directly applicable to the control of electronic properties, these results also point to the use of four-point probe resistance measurements in condensed phase sensing applications. Ultrasensitive conductance-based gas phase sensing of organothiol adsorption to gold nanowires is accomplished with a limit of detection in the 105 molecule range. Further refinement of the inherently low noise resistance measurement may lead to observation of single adsorption events at

  13. Investigation on the structural changes of ZnO:Er:Yb thin film during laser annealing to fabricate a transparent conducting upconverter

    Energy Technology Data Exchange (ETDEWEB)

    Lluscà, Marta, E-mail: marta.llusca@gmail.com [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Future Industries Institute, University of South Australia, Mawson Lakes, 5095 South Australia (Australia); López-Vidrier, Julian [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg (Germany); Lauzurica, Sara; Canteli, David; Sánchez-Aniorte, Maria I.; Molpeceres, Carlos [Centro Láser, Universidad Politécnica de Madrid, 28031 Madrid (Spain); Antony, Aldrin [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain); Indian Institute of Technology Bombay, 400076 Mumbai (India); Hernández, Sergi [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Alcobé, Xavier [Unitat de Difracció de Raigs X, Centres Científics i Tecnològics, Universitat de Barcelona, 08028 Barcelona (Spain); Garrido, Blas [Department of Electronics, Universitat de Barcelona, 08028 Barcelona (Spain); Bertomeu, Joan [Department of Applied Physics, Universitat de Barcelona, 08028 Barcelona (Spain)

    2017-05-15

    A transparent and conducting ZnO:Er:Yb thin film with upconversion properties has been achieved after being annealed with continuous laser radiation just before the ablation point of the material. This work demonstrates that the laser energy preserves the conductivity of the film and at the same time creates an adequate surrounding for Er and Yb to produce visible upconversion at 660, 560, 520, and 480 nm under 980 nm laser excitation. The relation between the structural, electrical and upconversion properties is discussed. It is observed that the laser energy melts part of the material, which recrystallizes creating rare earth oxides and two different wurtzite structures, one with substitutional rare earths and oxygen vacancies (responsible for the conductivity) and the other without substitutional rare earth ions (responsible for the upconversion emission).

  14. Development of a Handmade Conductivity Measurement Device for a Thin-Film Semiconductor and Its Application to Polypyrrole

    Science.gov (United States)

    Seng, Set; Shinpei, Tomita; Yoshihiko, Inada; Masakazu, Kita

    2014-01-01

    The precise measurement of conductivity of a semiconductor film such as polypyrrole (Ppy) should be carried out by the four-point probe method; however, this is difficult for classroom application. This article describes the development of a new, convenient, handmade conductivity device from inexpensive materials that can measure the conductivity…

  15. Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi

    2007-01-01

    A newly developed Al-doped ZnO (AZO) thin-film magnetron-sputtering deposition technique that decreases resistivity, improves resistivity distribution, and produces high-rate depositions has been demonstrated by dc magnetron-sputtering depositions that incorporate rf power (dc+rf-MS), either with or without the introduction of H 2 gas into the deposition chamber. The dc+rf-MS preparations were carried out in a pure Ar or an Ar+H 2 (0%-2%) gas atmosphere at a pressure of 0.4 Pa by adding a rf component (13.56 MHz) to a constant dc power of 80 W. The deposition rate in a dc+rf-MS deposition incorporating a rf power of 150 W was approximately 62 nm/min, an increase from the approximately 35 nm/min observed in dc magnetron sputtering with a dc power of 80 W. A resistivity as low as 3x10 -4 Ω cm and an improved resistivity distribution could be obtained in AZO thin films deposited on substrates at a low temperature of 150 deg. C by dc+rf-MS with the introduction of hydrogen gas with a content of 1.5%. This article describes the effects of adding a rf power component (i.e., dc+rf-MS deposition) as well as introducing H 2 gas into dc magnetron-sputtering preparations of transparent conducting AZO thin films

  16. Thin Film Thermoelectric Metal-Organic Framework with High Seebeck Coefficient and Low Thermal Conductivity. Supporting Information

    Science.gov (United States)

    2015-04-28

    conductivity The Green- Kubo method uses the auto-correlation of equilibrium heat flux J to calculate the conductivity κ from the expression (2) where V...specific experiments are discussed here, specifically, sensitivity calculations of our measurements to the thermal conductivity of the TCNQ@Cu3(BTC)2...where x denotes κMOF, CMOF, hK,Al/MOF or hK,MOF/SiO2. This TDTR sensitivity, Sx, is calculated by ]ln[ )( )( ln )( x tV tV tS out in x

  17. Entropy Generation on Nanofluid Thin Film Flow of Eyring–Powell Fluid with Thermal Radiation and MHD Effect on an Unsteady Porous Stretching Sheet

    Directory of Open Access Journals (Sweden)

    Mohammad Ishaq

    2018-05-01

    Full Text Available This research paper investigates entropy generation analysis on two-dimensional nanofluid film flow of Eyring–Powell fluid with heat amd mass transmission over an unsteady porous stretching sheet in the existence of uniform magnetic field (MHD. The flow of liquid films are taken under the impact of thermal radiation. The basic time dependent equations of heat transfer, momentum and mass transfer are modeled and converted to a system of differential equations by employing appropriate similarity transformation with unsteady dimensionless parameters. Entropy analysis is the main focus in this work and the impact of physical parameters on the entropy profile are discussed in detail. The influence of thermophoresis and Brownian motion has been taken in the nanofluids model. An optima approach has been applied to acquire the solution of modeled problem. The convergence of the HAM (Homotopy Analysis Method has been presented numerically. The disparity of the Nusslet number, Skin friction, Sherwood number and their influence on the velocity, heat and concentration fields has been scrutinized. Moreover, for comprehension, the physical presentation of the embedded parameters are explored analytically for entropy generation and discussed.

  18. Spinomotive force induced by a transverse displacement current in a thin metal or doped-semiconductor sheet: Classical and quantum views.

    Science.gov (United States)

    Hu, Chia-Ren

    2004-03-01

    We present classical macroscopic, microscopic, and quantum mechanical arguments to show that in a metallic or electron/hole-doped semiconducting sheet thinner than the screening length, a displacement current applied normal to it can induce a spinomotive force along it. The magnitude is weak but clearly detectable. The classical arguments are purely electromagnetic. The quantum argument, based on the Dirac equation, shows that the predicted effect originates from the spin-orbit interaction, but not of the usual kind. That is, it relies on an external electric field, whereas the usual S-O interaction involves the electric field generated by the ions. Because the Dirac equation incorporatesThomas precession, which is due to relativistic kinematics, the quantum prediction is a factor of two smaller than the classical prediction. Replacing the displacement current by a charge current, and one obtains a new source for the spin-Hall effect. Classical macroscopic argument also predicts its existence, but the other two views are controversial.

  19. Thermografic measurement of crack initiation and propagation at thin sheet joints; Rissentstehung thermometrisch ermitteln. Zerstoerungsfreie Bestimmung der Rissinitiierung in mechanisch gefuegten und widerstandpunktgeschweissten Verbindungen

    Energy Technology Data Exchange (ETDEWEB)

    Bathke, W.; Stahlfeld, G. [Bundesanstalt fuer Materialforschung und -pruefung (BAM), Berlin (Germany). Fachgruppe V.5 - Sicherheit in der Fuegetechnik

    2000-07-01

    This contribution demonstrates how a thermometric procedure might be applied to determine crack initiation during fatigue testing of joints at steel sheets. The procedure is based on the measurement of the temperature increase which is produced by the heat at the respective joint caused by deformation energy. Such investigations are aimed at detection of crack initiation before it becomes visible at the specimen surface. Thermografic measurements at different mechanical joints and resistance welded spots are compared and various applications are suggested. (orig.) [German] In diesem Beitrag wird gezeigt, wie sich ein thermometrisches Verfahren einsetzen laesst, um die Rissentstehung waehrend der Dauerschwingpruefung von Stahlblechen zu erfassen. Vergleichend werden Messungen an Proben, die durch Stanznieten, Clinchen und Widerstandspunktschweissen gefuegt wurden, gegenuebergestellt. Hierzu wird die am Fuegepunkt waehrend der Pruefung in Waerme umgewandelte Formaenderungsenergie kontinuierlich in Form der Temperaturerhoehung gemessen. Ziel dieser Untersuchungen ist es, solche Temperaturerhoehungen zur Erkennung der Rissentstehung zu verwenden, bevor der Riss die Blechoberflaeche erreicht hat und visuell erkennbar wird. Zudem werden verschiedene Anwendungsmoeglichkeiten vorgeschlagen. (orig.)

  20. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

    KAUST Repository

    Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dong Kyu; Zhang, Xixiang; Pey, Kin-Leong

    2011-01-01

    Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through

  1. A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

    International Nuclear Information System (INIS)

    Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

    2015-01-01

    We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

  2. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  3. Development of thermal scanning probe microscopy for the determination of thin films thermal conductivity: application to ceramic materials for nuclear industry

    International Nuclear Information System (INIS)

    David, L.

    2006-10-01

    Since the 1980's, various thermal metrologies have been developed to understand and characterize the phenomena of transport of thermal energy at microscopic and submicroscopic scales. Thermal Scanning Probe Microscopy (SThM) is promising. Based on the analysis of the thermal interaction between an heated probe and a sample, it permits to probe the matter at the level of micrometric size in volumes. Performed in the framework of the development of this technique, this work more particularly relates to the study of thin films thermal conductivity. We propose a new modelling of the prediction of measurement with SThM. This model allows not only the calibration of the method for the measurement of bulk material thermal conductivity but also to specify and to better describe the probe - sample thermal coupling and to estimate, from its inversion, thin films thermal conductivity. This new approach of measurement has allowed the determination of the thermal conductivity of micrometric and sub-micrometric thicknesses of meso-porous silicon thin film in particular. Our estimates for the micrometric thicknesses are in agreement with those obtained by the use of Raman spectrometry. For the lower thicknesses of film, we give new data. Our model has, moreover, allowed a better definition of the in-depth resolution of the apparatus. This one is strongly linked to the sensitivity of SThM and strongly depends on the probe-sample thermal coupling area and on the geometry of the probe used. We also developed the technique by the vacuum setting of SThM. Our first results under this environment of measurement are encouraging and validate the description of the coupling used in our model. Our method was applied to the study of ceramics (SiC, TiN, TiC and ZrC) under consideration in the composition of future nuclear fuels. Because of the limitations of SThM in terms of sensitivity to thermal conductivity and in-depth resolution, measurements were also undertaken with a modulated thermo

  4. Young's Modulus and Coefficient of Linear Thermal Expansion of ZnO Conductive and Transparent Ultra-Thin Films

    Directory of Open Access Journals (Sweden)

    Naoki Yamamoto

    2011-01-01

    Full Text Available A new technique for measuring Young's modulus of an ultra-thin film, with a thickness in the range of about 10 nm, was developed by combining an optical lever technique for measuring the residual stress and X-ray diffraction for measuring the strain in the film. The new technique was applied to analyze the mechanical properties of Ga-doped ZnO (GZO films, that have become the focus of significant attention as a substitute material for indium-tin-oxide transparent electrodes. Young's modulus of the as-deposited GZO films decreased with thickness; the values for 30 nm and 500 nm thick films were 205 GPa and 117 GPa, respectively. The coefficient of linear thermal expansion of the GZO films was measured using the new technique in combination with in-situ residual stress measurement during heat-cycle testing. GZO films with 30–100 nm thickness had a coefficient of linear thermal expansion in the range of 4.3 × 10−6 – 5.6 × 10−6 °C−1.

  5. Ga and Al doped zinc oxide thin films for transparent conducting oxide applications: Structure-property correlations

    Science.gov (United States)

    Temizer, Namik K.; Nori, Sudhakar; Narayan, Jagdish

    2014-01-01

    We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110 μΩ-cm) values. The films grown in an ambient oxygen partial pressure (PO2) of 5 × 10-2 Torr and at growth temperatures from room temperature to 600 °C show semiconducting behavior, whereas samples grown at a PO2 of 1 × 10-3 Torr show metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The measured optical and transport properties were found to be a strong function of growth conditions implying that the drastic changes are brought about essentially by native point defects. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical, and magnetic properties and such changes in physical properties are controlled predominantly by the defect content.

  6. External electric field driven modification of the anomalous and spin Hall conductivities in Fe thin films on MgO(001)

    Science.gov (United States)

    Pradipto, Abdul-Muizz; Akiyama, Toru; Ito, Tomonori; Nakamura, Kohji

    2018-01-01

    The effects of applying external electric fields to the anomalous and spin Hall conductivities in Fe thin-film models with different layer thicknesses on MgO(001) are investigated by using first-principles calculations. We observe that, for the considered systems, the application of positive electric field associated with the accumulation of negative charges on the Fe side generally decreases (increases) the anomalous (spin) Hall conductivities. The mapping of the Hall conductivities within the two-dimensional Brillouin zone shows that the electric-field-induced modifications are related to the modification of the band structures of the atoms at the interface with the MgO substrate. In particular, the external electric field affects the Hall conductivities via the modifications of the dx z,dy z orbitals, in which the application of positive electric field pushes the minority-spin states of the dx z,dy z bands closer to the Fermi level. Better agreement with the anomalous Hall conductivity for bulk Fe and a more realistic scenario for the electric field modification of Hall conductivities are obtained by using the thicker layers of Fe on MgO (Fe3/MgO and Fe5/MgO).

  7. Building up Graphene-Based Conductive Polymer Composite Thin Films Using Reduced Graphene Oxide Prepared by γ-Ray Irradiation

    Directory of Open Access Journals (Sweden)

    Siyuan Xie

    2013-01-01

    Full Text Available In this paper, reduced graphene oxide (RGO was prepared by means of γ-ray irradiation of graphene oxide (GO in a water/ethanol mix solution, and we investigated the influence of reaction parameters, including ethanol concentration, absorbed dose, and dose rate during the irradiation. Due to the good dispersibility of the RGO in the mix solution, we built up flexible and conductive composite films based on the RGO and polymeric matrix through facile vacuum filtration and polymer coating. The electrical and optical properties of the obtained composite films were tested, showing good electrical conductivity with visible transmittance but strong ultraviolet absorbance.

  8. On the effect of ammonia and wet atmospheres on the conducting properties of different lutetium bisphthalocyanine thin films

    International Nuclear Information System (INIS)

    Parra, Vicente; Bouvet, Marcel; Brunet, Jerome; Rodriguez-Mendez, Maria Luz; Saja, Jose Antonio de

    2008-01-01

    In this article, we present new experimental data regarding the influence of ammonia (NH 3 ) and water (from wet atmospheres) in the conducting properties of lutetium bisphthalocyanine (LuPc 2 )-based films in two very different structural features, namely Langmuir-Blodgett (LB) and vacuum evaporated (VE) films, deposited onto interdigitated electrodes. We pay particular attention to the effect of the mass flow rate ratios of the active gases, which certainly influence the mechanism of conduction of the chemiresistors. The particular trends observed are discussed on the basis of two main contributions: the electronic effects and the competition between gases in the adsorption process

  9. On the effect of ammonia and wet atmospheres on the conducting properties of different lutetium bisphthalocyanine thin films

    Energy Technology Data Exchange (ETDEWEB)

    Parra, Vicente [Ecole Superieure de Physique et Chimie Industrielles (ESPCI) and Laboratoire de Chimie Inorganique et Materiaux Moleculaires-CNRS UMR 7071, Universite Pierre et Marie Curie (Paris 6) (France); Bouvet, Marcel [Ecole Superieure de Physique et Chimie Industrielles (ESPCI) and Laboratoire de Chimie Inorganique et Materiaux Moleculaires-CNRS UMR 7071, Universite Pierre et Marie Curie (Paris 6) (France)], E-mail: marcel.bouvet@espci.fr; Brunet, Jerome [Universite Blaise Pascal, LASMEA-CNRS UMR 6602, Clermont-Ferrand (France); Rodriguez-Mendez, Maria Luz [Dept. Quimica Fisica y Quimica Inorganica, Escuela Tecnica Superior de Ingenieros Industriales (E.T.S.I.I), Universidad de Valladolid (Spain); Saja, Jose Antonio de [Dept. Fisica de la Materia Condensada, Facultad de Ciencias, Universidad de Valladolid (Spain)

    2008-10-31

    In this article, we present new experimental data regarding the influence of ammonia (NH{sub 3}) and water (from wet atmospheres) in the conducting properties of lutetium bisphthalocyanine (LuPc{sub 2})-based films in two very different structural features, namely Langmuir-Blodgett (LB) and vacuum evaporated (VE) films, deposited onto interdigitated electrodes. We pay particular attention to the effect of the mass flow rate ratios of the active gases, which certainly influence the mechanism of conduction of the chemiresistors. The particular trends observed are discussed on the basis of two main contributions: the electronic effects and the competition between gases in the adsorption process.

  10. Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

    International Nuclear Information System (INIS)

    Kim, Won Mok; Kim, Jin Soo; Jeong, Jeung-hyun; Park, Jong-Keuk; Baik, Young-Jun; Seong, Tae-Yeon

    2013-01-01

    Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16 –10 21 cm −3 , were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated. - Highlights: ► Optical band-gaps of polycrystalline ZnO thin films were analyzed. ► Experimental carrier concentration range covered from 10 16 to 10 21 cm −3 . ► Nonparabolic conduction band parameters were used in theoretical analysis. ► The band-filling and the band-gap renormalization effects were considered. ► The measured optical band-gap shifts corresponded well with the calculated ones

  11. Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis

    International Nuclear Information System (INIS)

    Gaikwad, Rajendra S.; Bhande, Sambhaji S.; Mane, Rajaram S.; Pawar, Bhagwat N.; Gaikwad, Sanjay L.; Han, Sung-Hwan; Joo, Oh-Shim

    2012-01-01

    Graphical abstract: Display Omitted Highlights: ► We report surface roughness dependent transparency and conductivity in ZnO films. ► The surface roughness with respected to boron doping concentrations is studied. ► Boron doped and pristine Zinc oxide thin films have showed ≥95% transmittance. ► Increased carrier concentration of 9.21 × 10 21 cm −3 revealed from Hall measurement. -- Abstract: Sprayed polycrystalline ZnO and boron-doped ZnO thin films composed of spherical grains of 25–32 nm in diameters are used in roughness measurement and further correlated with the transparency and the conductivity characteristics. The surface roughness is increased up to Zn 0.98 B 0.02 O and then declined at higher boron concentrations. The sprayed ZnO films revealed ≥95% transmittance in the visible wavelength range, 1.956 × 10 −4 Ω cm electrical resistivity, 46 cm 2 /V s Hall mobility and 9.21 × 10 21 cm −3 charge carrier concentration. The X-ray photoelectron spectroscopy study has confirmed 0.15 eV binding energy change for Zn 2p 3/2 when 2 at% boron content is mixed without altering electro-optical properties substantially. Finally, using soft modeling importance of these textured ZnO over non-textured films for enhancing the solar cells performance is explored.

  12. AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

    Science.gov (United States)

    Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

    2017-11-01

    Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

  13. Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device

    Science.gov (United States)

    Kumar, Dayanand; Aluguri, Rakesh; Chand, Umesh; Tseng, Tseung-Yuen

    2018-04-01

    Ta5Si3-based conductive bridge random access memory (CBRAM) devices have been investigated to improve their resistive switching characteristics for their application in future nonvolatile memory technology. Changes in the switching characteristics by the addition of a thin Al2O3 layer of different thicknesses at the bottom electrode interface of a Ta5Si3-based CBRAM devices have been studied. The double-layer device with a 1 nm Al2O3 layer has shown improved resistive switching characteristics over the single layer one with a high on/off resistance ratio of 102, high endurance of more than 104 cycles, and good retention for more than 105 s at the temperature of 130 °C. The higher thermal conductivity of Al2O3 over Ta5Si3 has been attributed to the enhanced switching properties of the double-layer devices.

  14. Highly Conductive Transparent and Flexible Electrodes Including Double-Stacked Thin Metal Films for Transparent Flexible Electronics.

    Science.gov (United States)

    Han, Jun Hee; Kim, Do-Hong; Jeong, Eun Gyo; Lee, Tae-Woo; Lee, Myung Keun; Park, Jeong Woo; Lee, Hoseung; Choi, Kyung Cheol

    2017-05-17

    To keep pace with the era of transparent and deformable electronics, electrode functions should be improved. In this paper, an innovative structure is suggested to overcome the trade-off between optical and electrical properties that commonly arises with transparent electrodes. The structure of double-stacked metal films showed high conductivity (electronics are expected.

  15. Electro-thermo-mechanical coupling analysis of deep drawing with resistance heating for aluminum matrix composites sheet

    Science.gov (United States)

    Zhang, Kaifeng; Zhang, Tuoda; Wang, Bo

    2013-05-01

    Recently, electro-plastic forming to be a focus of attention in materials hot processing research area, because it is a sort of energy-saving, high efficient and green manufacturing technology. An electro-thermo-mechanical model can be adopted to carry out the sequence simulation of aluminum matrix composites sheet deep drawing via electro-thermal coupling and thermal-mechanical coupling method. The first step of process is resistance heating of sheet, then turn off the power, and the second step is deep drawing. Temperature distribution of SiCp/2024Al composite sheet by resistance heating and sheet deep drawing deformation were analyzed. During the simulation, effect of contact resistances, temperature coefficient of resistance for electrode material and SiCp/2024Al composite on temperature distribution were integrally considered. The simulation results demonstrate that Sicp/2024Al composite sheet can be rapidly heated to 400° in 30s using resistances heating and the sheet temperature can be controlled by adjusting the current density. Physical properties of the electrode materials can significantly affect the composite sheet temperature distribution. The temperature difference between the center and the side of the sheet is proportional to the thermal conductivity of the electrode, the principal cause of which is that the heat transfers from the sheet to the electrode. SiCp/2024Al thin-wall part can be intactly manufactured at strain rate of 0.08s-1 and the sheet thickness thinning rate is limited within 20%, which corresponds well to the experimental result.

  16. Experimental determination of thermal conductivities of dielectric thin films; Determination experimentale des conductivites thermiques de couches minces dielectriques

    Energy Technology Data Exchange (ETDEWEB)

    Scudeller, Y.; Hmina, N.; Lahmar, J.; Bardon, J.P. [Nantes Univ., 44 (France)

    1996-12-31

    This paper presents a method of measurement of thermal conductivity of sub-micron dielectric films in a direction perpendicular to the substrate. These films (oxides, nitrides, diamond..) are mainly used for the electrical insulation of semiconductor circuits and in optical treatments of high energy lasers. The principle of the method used and the experimental device are described. The results obtained with silicon oxides are discussed. (J.S.) 13 refs.

  17. Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Zhenguo [College of Electronic Information, Hangzhou Dianzi University, Hangzhou (China); State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China); Xi, Junhua; Huo, Lijuan; Zhao, Yi [State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou (China)

    2008-07-01

    P-type transparent conducting tin-antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X-ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb{sub 2}O{sub 4}. UV-Visible absorption and transmittance spectra showed that the optical band-gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p-type conducting TAO films. It was found that 0.19conducting films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Development of electrical-erosion instrument for direct write micro-patterning on large area conductive thin films

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez, Ángel Luis; Coya, Carmen; García-Vélez, Miguel [Departamento Teoría de la Señal y Comunicaciones, Sistemas Telemáticos y Computación, Escuela Técnica Superior de Ingeniería de Telecomunicación, Universidad Rey Juan Carlos, Fuenlabrada, Madrid 28943 (Spain)

    2015-08-15

    We have developed a complete instrument to perform direct, dry, and cost-effective lithography on conductive materials, based on localized electrical discharges, which avoids using masks or chemicals typical of conventional photolithography. The technique is considered fully compatible with substrate transport based systems, like roll-to-roll technology. The prototype is based on two piezo nano-steppers coupled to three linear micro-stages to cover a large scale operation from micrometers to centimeters. The operation mode consists of a spring probe biased at low DC voltage with respect to a grounded conductive layer. The tip slides on the target layer keeping contact with the material in room conditions, allowing continuous electric monitoring of the process, and also real-time tilt correction via software. The sliding tip leaves an insulating path (limited by the tip diameter) along the material, enabling to draw electrically insulated tracks and pads. The physical principle of operation is based in the natural self-limitation of the discharge due to material removal or insulation. The so produced electrical discharges are very fast, in the range of μs, so features may be performed at speeds of few cm/s, enabling scalability to large areas. The instrument has been tested on different conducting materials as gold, indium tin oxide, and aluminum, allowing the fabrication of alphanumeric displays based on passive matrix of organic light emitting diodes without the use of masks or photoresists. We have verified that the highest potential is achieved on graphene, where no waste material is detected, producing excellent well defined edges. This allows manufacturing graphene micro-ribbons with a high aspect ratio up to 1200:1.

  19. Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films

    Czech Academy of Sciences Publication Activity Database

    Vetushka, Aliaksi; Fejfar, Antonín; Ledinský, Martin; Rezek, Bohuslav; Stuchlík, Jiří; Kočka, Jan

    2010-01-01

    Roč. 7, 3-4 (2010), s. 728-731 ISSN 1862-6351 R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510; GA AV ČR(CZ) IAA100100902 Institutional research plan: CEZ:AV0Z10100521 Keywords : local anodic oxidation (LAO) * conductive atomic force microscopy (C-AFM) Subject RIV: BM - Solid Matter Physics ; Magnetism http://www3.interscience.wiley.com/journal/123289759/abstract

  20. Correlation between the transport mechanisms in conductive filaments inside Ta2O5-based resistive switching devices and in substoichiometric TaOx thin films

    Science.gov (United States)

    Rosário, Carlos M. M.; Thöner, Bo; Schönhals, Alexander; Menzel, Stephan; Wuttig, Matthias; Waser, Rainer; Sobolev, Nikolai A.; Wouters, Dirk J.

    2018-05-01

    Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content in a local region of these conductive filaments. However, a deep understanding of the filaments' composition and structure is still a matter of debate. We approached the problem by comparing the electronic transport, at temperatures from 300 K down to 2 K, in the filaments and in TaOx films exhibiting a substoichiometric oxygen content. The filaments were created in Ta (15 nm)/Ta2O5 (5 nm)/Pt crossbar ReRAM structures. In the TaOx thin films with various oxygen contents, the in-plane transport was studied. There is a close similarity between the electrical properties of the conductive filaments in the ReRAM devices and of the TaOx films with x ˜ 1, evidencing also no dimensionality difference for the electrical transport. More specifically, for both systems there are two different conduction processes: one in the higher temperature range (from 50 K up to ˜300 K), where the conductivity follows a √{ T } dependence, and one at lower temperatures (<50 K), where the conductivity follows the exp(-1 / √{ T } ) dependence. This suggests a strong similarity between the material composition and structure of the filaments and those of the substoichiometric TaOx films. We also discuss the temperature dependence of the conductivity in the framework of possible transport mechanisms, mainly of those normally observed for granular metals.

  1. AC conductivity and dielectric properties of amorphous GexSb40-xSe60 thin films

    International Nuclear Information System (INIS)

    Atyia, H.E.; Farid, A.M.; Hegab, N.A.

    2008-01-01

    Measurements of AC conductivity and dielectric properties have been made for chalcogenide film samples of Ge x Sb 40-x Se 60 (with x=0, 10 and 20 at%) at different temperatures (303-393 K) and various frequencies (10 2 -10 5 Hz). It was found that the AC conductivity obeys the law σ(ω, T)=Aω s . The exponent s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W M was calculated from dielectric measurements according to the Guintini equation. It was found that the obtained value of W m agrees with that proposed by the theory of hopping of charge carriers over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states N(E F ) has also been calculated for the studied compositions. The effect of decreasing the Sb content at the expense of the Ge content was investigated for the obtained results of the studied parameters

  2. The n-type conduction of indium-doped Cu{sub 2}O thin films fabricated by direct current magnetron co-sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Xing-Min; Su, Xiao-Qiang; Ye, Fan, E-mail: yefan@szu.edu.cn; Wang, Huan; Tian, Xiao-Qing; Zhang, Dong-Ping; Fan, Ping; Luo, Jing-Ting; Zheng, Zhuang-Hao; Liang, Guang-Xing [Institute of Thin Film Physics and Applications, School of Physical Science and Technology and Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen 518060 (China); Roy, V. A. L. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Kowloon Tong, Hong Kong (China)

    2015-08-24

    Indium-doped Cu{sub 2}O thin films were fabricated on K9 glass substrates by direct current magnetron co-sputtering in an atmosphere of Ar and O{sub 2}. Metallic copper and indium disks were used as the targets. X-ray diffraction showed that the diffraction peaks could only be indexed to simple cubic Cu{sub 2}O, with no other phases detected. Indium atoms exist as In{sup 3+} in Cu{sub 2}O. Ultraviolet-visible spectroscopy showed that the transmittance of the samples was relatively high and that indium doping increased the optical band gaps. The Hall effect measurement showed that the samples were n-type semiconductors at room temperature. The Seebeck effect test showed that the films were n-type semiconductors near or over room temperature (<400 K), changing to p-type at relatively high temperatures. The conduction by the samples in the temperature range of the n-type was due to thermal band conduction and the donor energy level was estimated to be 620.2–713.8 meV below the conduction band. The theoretical calculation showed that indium doping can raise the Fermi energy level of Cu{sub 2}O and, therefore, lead to n-type conduction.

  3. Thermal conductivity in Pr{sub 1-x}Ca{sub x}MnO{sub 3} and SrTiO{sub 3} thin film systems

    Energy Technology Data Exchange (ETDEWEB)

    Wiedigen, Stefanie; Kramer, Thilo; Mangipudi, Kodanda R.; Hoffmann, Joerg; Volkert, Cynthia A.; Jooss, Christian [Institute for Materials Physics, University of Goettingen (Germany); Feuchter, Manuel; Kamlah, Marc [Institute for Applied Materials, Karlsruhe Institute of Technology (Germany)

    2012-07-01

    Epitaxial multilayers and superlattices are one recent approach for the design of efficient thermoelectrics. To study the effect of phonon blocking and scattering on thermal conductivity of oxide multilayers, a combination of two perovskites with promising thermoelectric properties is selected: the orthorhombic Pr{sub 1-x}Ca{sub x}MnO{sub 3} and the cubic SrTiO{sub 3}. In order to investigate the effect of microstructure, interfaces and acoustic impedance mismatch on thermal conductivity {kappa} high preparation quality is needed. Our thin films were prepared by ion-beam and magnetron sputtering. Structural analysis is done by XRD and TEM and is presented in combination with thermal conductivity measurements using the 3{omega} method. Single layers of Pr{sub 1-x}Ca{sub x}MnO{sub 3} show low {kappa} values and no significant increase of thermal conductivity with increasing doping. In homoepitaxial single layers of SrTiO{sub 3} preparation conditions have a high impact on {kappa}, most probably due to different concentrations of point defects. Pr{sub 1-x}Ca{sub x}MnO{sub 3}/SrTiO{sub 3} multilayers show a {kappa} decreases systematically with increasing number of double layers. The results are discussed in the light of the theoretically calculated phonon dispersion and the experimentally observed microstructure.

  4. Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

    NARCIS (Netherlands)

    Deelen, J. van; Barink, M.; Klerk, L.; Voorthuijzen, P.; Hovestad, A.

    2015-01-01

    Modeling indicates a potential efficiency boost of 17% if thin-film solar panels are featured with a metallic grid. Variations of transparent conductive oxide sheet resistance, cell length, and grid dimensions are discussed. These parameters were optimized simultaneously to obtain the best result.

  5. High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

    Science.gov (United States)

    Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

    2016-02-01

    The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

  6. Highly-ordered mesoporous titania thin films prepared via surfactant assembly on conductive indium-tin-oxide/glass substrate and its optical properties

    International Nuclear Information System (INIS)

    Uchida, Hiroshi; Patel, Mehul N.; May, R. Alan; Gupta, Gaurav; Stevenson, Keith J.; Johnston, Keith P.

    2010-01-01

    Highly ordered mesoporous titanium dioxide (titania, TiO 2 ) thin films on indium-tin-oxide (ITO) coated glass were prepared via a Pluronic (P123) block copolymer template and a hydrophilic TiO 2 buffer layer. The contraction of the 3D hexagonal array of P123 micelles upon calcination merges the titania domains on the TiO 2 buffer layer to form mesoporous films with a mesochannel diameter of approximately 10 nm and a pore-to-pore distance of 10 nm. The mesoporous titania films on TiO 2 -buffered ITO/glass featured an inverse mesospace with a hexagonally-ordered structure, whereas the films formed without a TiO 2 buffer layer had a disordered microstructure with submicron cracks because of non-uniform water condensation on the hydrophobic ITO/glass surface. The density of the mesoporous film was 83% that of a bulk TiO 2 film. The optical band gap of the mesoporous titania thin film was approximately 3.4 eV, larger than that for nonporous anatase TiO 2 (∼ 3.2 eV), suggesting that the nanoscopic grain size leads to an increase in the band gap due to weak quantum confinement effects. The ability to form highly-ordered mesoporous titania films on electrically conductive and transparent substrates offers the potential for facile fabrication of high surface area semiconductive films with small diffusion lengths for optoelectronics applications.

  7. Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

    Science.gov (United States)

    Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

    2018-06-01

    ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

  8. Measurement of the surface susceptibility and the surface conductivity of atomically thin MoS2 by spectroscopic ellipsometry

    KAUST Repository

    Jayaswal, Gaurav; Dai, Zhenyu; Zhang, Xixiang; Bagnarol, Mirko; Martucci, Alessandro; Merano, Michele

    2018-01-01

    We show how to correctly extract from the ellipsometric data the surface susceptibility and the surface conductivity that describe the optical properties of monolayer MoS. Theoretically, these parameters stem from modelling a single-layer two-dimensional crystal as a surface current, a truly two-dimensional model. Current experimental practice is to consider this model equivalent to a homogeneous slab with an effective thickness given by the interlayer spacing of the exfoliating bulk material. We prove that the error in the evaluation of the surface susceptibility of monolayer MoS, owing to the use of the slab model, is at least 10% or greater, a significant discrepancy in the determination of the optical properties of this material.

  9. Measurement of the surface susceptibility and the surface conductivity of atomically thin MoS2 by spectroscopic ellipsometry

    KAUST Repository

    Jayaswal, Gaurav

    2018-02-06

    We show how to correctly extract from the ellipsometric data the surface susceptibility and the surface conductivity that describe the optical properties of monolayer MoS. Theoretically, these parameters stem from modelling a single-layer two-dimensional crystal as a surface current, a truly two-dimensional model. Current experimental practice is to consider this model equivalent to a homogeneous slab with an effective thickness given by the interlayer spacing of the exfoliating bulk material. We prove that the error in the evaluation of the surface susceptibility of monolayer MoS, owing to the use of the slab model, is at least 10% or greater, a significant discrepancy in the determination of the optical properties of this material.

  10. A simple model for the prediction of thermal conductivity of Ge2Sb2Te5 thin film

    International Nuclear Information System (INIS)

    Jin, Jae Sik

    2013-01-01

    A modified version of the Mayadas-Shatzkes (MS) model is proposed for the prediction of the thermal conductivity of both amorphous and crystalline of Ge 2 Sb 2 Te 5 (GST) phase-change materials at room temperature. The structural parameters of the original MS model are extended to describe the additional disorder scattering effects caused by the ternary components of the GST. The effect of disorder due to the alloy composition on the grain boundary scattering can be interpreted with the aid of thermal models. It is also found that for all phases of GST, the contribution of disorder scattering to the thermal resistance is nearly uniform. This is consistent with the fact that the GST phase changes without any destruction of the structural basis such as the building blocks.

  11. Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces

    International Nuclear Information System (INIS)

    Kasai, J.; Nakao, S.; Yamada, N.; Hitosugi, T.; Moriyama, M.; Goshonoo, K.; Hoang, N. L. H.; Hasegawa, T.

    2010-01-01

    Anatase Nb-doped TiO 2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 deg. C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8x10 -4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furthermore, the refractive index of the Nb-doped TiO 2 was well matched to that of GaN. These findings indicate that Nb-doped TiO 2 is a promising material for use as transparent electrodes in GaN-based light emitting diodes (LEDs), particularly since reflection at the electrode/GaN boundary can be suppressed, enhancing the external quantum efficiency of blue LEDs.

  12. Improving the conductance of ZnO thin film doping with Ti by using a cathodic vacuum arc deposition process

    International Nuclear Information System (INIS)

    Wu, Chun-Sen; Lin, Bor-Tsuen; Jean, Ming-Der

    2011-01-01

    The Ti-doped ZnO films compared to un-doped ZnO films were deposited onto Corning XG glass substrates by using a cathodic vacuum arc deposition process in a mixture of oxygen and argon gases. The structural, electrical and optical properties of un-doped and Ti-doped ZnO films have been investigated. When the Ti target power is about 750 W, the incorporation of titanium atoms into zinc oxide films is obviously effective. Additionally, the resistivity of un-doped ZnO films is high and reduces to a value of 3.48 x 10 -3 Ω-cm when Ti is incorporated. The Ti doped in the ZnO films gave rise to the improvement of the conductivity of the films obviously. The Ti-doped ZnO films have > 85% transmittance in a range of 400-700 nm.

  13. Application of hydrogen-doped In2O3 transparent conductive oxide to thin-film microcrystalline Si solar cells

    International Nuclear Information System (INIS)

    Koida, Takashi; Sai, Hitoshi; Kondo, Michio

    2010-01-01

    Hydrogen-doped In 2 O 3 (IO:H) films with high electron mobility and improved near-infrared (NIR) transparency have been applied as a transparent conducting oxide (TCO) electrode in substrate-type hydrogenated microcrystalline silicon (μc-Si:H) solar cells. The incorporation of IO:H, instead of conventional Sn-doped In 2 O 3 , improved the short-circuit current density (J sc ) and the resulting conversion efficiency. Optical analysis of the solar cells and TCO films revealed that the improvement in J sc is due to the improved spectral sensitivity in the visible and NIR wavelengths by reduction of absorption loss caused by free carriers in the TCO films.

  14. Superhydrophobic and anti-reflective ZnO nanorod-coated FTO transparent conductive thin films prepared by a three-step method

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bao-jia, E-mail: li_bjia@126.com [School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013 (China); Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); Huang, Li-jing; Ren, Nai-fei [Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology, Jiangsu University, Zhenjiang, 212013 (China); School of Mechanical Engineering, Jiangsu University, Zhenjiang, 212013 (China); Kong, Xia; Cai, Yun-long; Zhang, Jie-lu [Jiangsu Tailong Reduction Box Co. Ltd., Taixing, 225400 (China)

    2016-07-25

    A ZnO nanorod-coated FTO film was prepared by sputtering an AZO layer on FTO glass, thermal annealing of the AZO/FTO film, and hydrothermal growth of ZnO nanorods at 70 °C on the annealed AZO/FTO film using zinc foils as zinc source. Two other ZnO nanorod-coated FTO films were also prepared by hydrothermal growths of ZnO nanorods on the FTO glass and the unannealed AZO/FTO film respectively for comparison purpose. The results were observed in detail using X-ray diffraction, scanning electron microscopy, water contact/sliding angle measurement, spectrophotometry and four-point probe measurement. The ZnO nanorods on the annealed AZO/FTO film were found to exhibit denser distribution and better orientation than those on the FTO glass and the unannealed AZO/FTO film. As a result, the ZnO nanorod-coated annealed AZO/FTO film demonstrated superhydrophobicity, high transparency and low reflectance in the visible range. Also this film had the lowest sheet resistance of 4.0 Ω/sq, implying its good electrical conductivity. This investigation provides a valuable reference for developing multifunctional transparent conductive films. - Highlights: • ZnO nanorod-coated annealed AZO/FTO film was obtained by a three-step method. • FTO and unannealed AZO/FTO films were also used as substrates for comparison. • ZnO nanorods on the annealed AZO/FTO film were denser and more vertically-oriented. • The ZnO nanorod-coated annealed AZO/FTO film (Z/TA-FTO) had superhydrophobicity. • The Z/TA-FTO exhibited high transparency, low reflectance and good conductivity.

  15. High efficiency bifacial Cu2ZnSnSe4 thin-film solar cells on transparent conducting oxide glass substrates

    Directory of Open Access Journals (Sweden)

    Jung-Sik Kim

    2016-09-01

    Full Text Available In this work, transparent conducting oxides (TCOs have been employed as a back contact instead of Mo on Cu2ZnSnSe4 (CZTSe thin-film solar cells in order to examine the feasibility of bifacial Cu2ZnSn(S,Se4 (CZTSSe solar cells based on a vacuum process. It is found that the interfacial reaction between flourine doped tin oxide (FTO or indium tin oxide (ITO and the CZTSe precursor is at odds with the conventional CZTSe/Mo reaction. While there is no interfacial reaction on CZTSe/FTO, indium in CZTSe/ITO was significantly diffused into the CZTSe layers; consequently, a SnO2 layer was formed on the ITO substrate. Under bifacial illumination, we achieved a power efficiency of 6.05% and 4.31% for CZTSe/FTO and CZTSe/ITO, respectively.

  16. Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

    International Nuclear Information System (INIS)

    Cho, Dae-Hyung; Chung, Yong-Duck; Lee, Kyu-Seok; Park, Nae-Man; Kim, Kyung-Hyun; Choi, Hae-Won; Kim, Jeha

    2012-01-01

    We have studied the influence of growth temperature (T G ) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G . For a T G ≤ 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p–n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency.

  17. Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

    Science.gov (United States)

    Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

    2018-06-01

    We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

  18. Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Pranav; Dutta, Titas; Mal, Siddhartha; Narayan, Jagdish [Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)

    2012-01-01

    We report the systematic changes in structural, electrical, and optical properties of NiO thin films on c-sapphire introduced by nanosecond ultraviolet excimer laser pulses. Epitaxial nature of as deposited NiO was determined by x-ray diffraction phi scans and transmission electron microscopy (TEM) and it was established that NiO film growth takes place with twin domains on sapphire where two types of domains have 60 deg. in-plane rotation with respect to each other about the [111] growth direction. We determined that at pulsed laser energy density of 0.275 J/cm{sup 2}, NiO films exhibited conversion from p-type semiconducting to n-type conductive behavior with three orders of magnitude decrease in resistivity, while maintaining its cubic crystal structure and good epitaxial relationship. Our TEM and electron-energy-loss spectroscopy studies conclusively ruled out the presence of any Ni clustering or precipitation due to the laser treatment. The laser-induced n-type carrier transport and conductivity enhancement were shown to be reversible through subsequent thermal annealing in oxygen. This change in conductivity behavior was correlated with the nonequilibrium concentration of laser induced Ni{sup 0}-like defect states.

  19. Improved transparent-conducting properties in N2- and H2- annealed GaZnO thin films grown on glass substrates

    International Nuclear Information System (INIS)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon

    2012-01-01

    The effects of N 2 - and H 2 - annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of ∼10 0 Ω·cm and an optical transmittance of ∼86%. After annealing in N 2 or H 2 , the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H 2 -annealed sample, a dramatic decrease in the resistivity (7 x 10 -4 Ω·cm) with a considerable increase in the carrier concentration (4.22 x 10 21 cm -3 ) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H 2 annealing. The sample revealed an enhanced optical transmittance (∼91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H 2 -annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  20. Chlamydia - CDC Fact Sheet

    Science.gov (United States)

    ... Archive STDs Home Page Bacterial Vaginosis (BV) Chlamydia Gonorrhea Genital Herpes Hepatitis HIV/AIDS & STDs Human Papillomavirus ( ... sheet Pelvic Inflammatory Disease (PID) – CDC fact sheet Gonorrhea – CDC fact sheet STDs Home Page Bacterial Vaginosis ( ...

  1. Predicting Pulsar Scintillation from Refractive Plasma Sheets

    Science.gov (United States)

    Simard, Dana; Pen, Ue-Li

    2018-05-01

    The dynamic and secondary spectra of many pulsars show evidence for long-lived, aligned images of the pulsar that are stationary on a thin scattering sheet. One explanation for this phenomenon considers the effects of wave crests along sheets in the ionized interstellar medium, such as those due to Alfvén waves propagating along current sheets. If these sheets are closely aligned to our line-of-sight to the pulsar, high bending angles arise at the wave crests and a selection effect causes alignment of images produced at different crests, similar to grazing reflection off of a lake. Using geometric optics, we develop a simple parameterized model of these corrugated sheets that can be constrained with a single observation and that makes observable predictions for variations in the scintillation of the pulsar over time and frequency. This model reveals qualitative differences between lensing from overdense and underdense corrugated sheets: Only if the sheet is overdense compared to the surrounding interstellar medium can the lensed images be brighter than the line-of-sight image to the pulsar, and the faint lensed images are closer to the pulsar at higher frequencies if the sheet is underdense, but at lower frequencies if the sheet is overdense.

  2. Experimental formability analysis of bondal sandwich sheet

    Science.gov (United States)

    Kami, Abdolvahed; Banabic, Dorel

    2018-05-01

    Metal/polymer/metal sandwich sheets have recently attracted the interests of industries like automotive industry. These sandwich sheets have superior properties over single-layer metallic sheets including good sound and vibration damping and light weight. However, the formability of these sandwich sheets should be enhanced which requires more research. In this paper, the formability of Bondal sheet (DC06/viscoelastic polymer/DC06 sandwich sheet) was studied through different types of experiments. The mechanical properties of Bondal were determined by uniaxial tensile tests. Hemispherical punch stretching and hydraulic bulge tests were carried out to determine the forming limit diagram (FLD) of Bondal. Furthermore, cylindrical and square cup drawing tests were performed in dry and oil lubricated conditions. These tests were conducted at different blank holding forces (BHFs). An interesting observation about Bondal sheet deep drawing was obtaining of higher drawing depths at dry condition in comparison with oil-lubricated condition.

  3. GASN sheets

    International Nuclear Information System (INIS)

    2013-12-01

    This document gathers around 50 detailed sheets which describe and present various aspects, data and information related to the nuclear sector or, more generally to energy. The following items are addressed: natural and artificial radioactive environment, evolution of energy needs in the world, radioactive wastes, which energy for France tomorrow, the consequences in France of the Chernobyl accident, ammunitions containing depleted uranium, processing and recycling of used nuclear fuel, transport of radioactive materials, seismic risk for the basic nuclear installations, radon, the precautionary principle, the issue of low doses, the EPR, the greenhouse effect, the Oklo nuclear reactors, ITER on the way towards fusion reactors, simulation and nuclear deterrence, crisis management in the nuclear field, does nuclear research put a break on the development of renewable energies by monopolizing funding, nuclear safety and security, the plutonium, generation IV reactors, comparison of different modes of electricity production, medical exposure to ionizing radiations, the control of nuclear activities, food preservation by ionization, photovoltaic solar collectors, the Polonium 210, the dismantling of nuclear installations, wind energy, desalination and nuclear reactors, from non-communication to transparency about nuclear safety, the Jules Horowitz reactor, CO 2 capture and storage, hydrogen, solar energy, the radium, the subcontractors of maintenance of the nuclear fleet, biomass, internal radio-contamination, epidemiological studies, submarine nuclear propulsion, sea energy, the Three Mile Island accident, the Chernobyl accident, the Fukushima accident, the nuclear after Fukushima

  4. Pneumatic artificial rubber muscle using shape-memory polymer sheet with embedded electrical heating wire

    Science.gov (United States)

    Takashima, Kazuto; Sugitani, Kazuhiro; Morimoto, Naohiro; Sakaguchi, Seiya; Noritsugu, Toshiro; Mukai, Toshiharu

    2014-12-01

    Shape-memory polymer (SMP) can be deformed by applying a small load above its glass transition temperature (Tg). Shape-memory polymer maintains its shape after it has cooled below Tg and returns to a predefined shape when subsequently heated above Tg. The reversible change in the elastic modulus between the glassy and rubbery states of an SMP can be on the order of several hundred times. Based on the change in stiffness of the SMP in relation to the change in temperature, the present study attempts to evaluate the application of the SMP to soft actuators of a robot. In order to control the temperature of the SMP, we developed an SMP sheet with an embedded electrical heating wire. We formed a uniform, thin SMP sheet without air bubbles using a heat press. The SMP sheet with a heating wire can be heated quickly and can be maintained at a constant temperature. Moreover, the effects of the embedded wire on the mechanical properties in bending and tensile tests were small. Then, we applied the SMP sheet with the embedded electrical heating wire to a pneumatic artificial rubber muscle. The enhanced versatility of SMP sheet applications is demonstrated through a series of experiments conducted using a prototype. The initial shape and bending displacement of the pneumatic artificial rubber muscle can be changed by controlling the temperature of the SMP sheet.

  5. Pneumatic artificial rubber muscle using shape-memory polymer sheet with embedded electrical heating wire

    International Nuclear Information System (INIS)

    Takashima, Kazuto; Sugitani, Kazuhiro; Morimoto, Naohiro; Sakaguchi, Seiya; Noritsugu, Toshiro; Mukai, Toshiharu

    2014-01-01

    Shape-memory polymer (SMP) can be deformed by applying a small load above its glass transition temperature (T g ). Shape-memory polymer maintains its shape after it has cooled below T g and returns to a predefined shape when subsequently heated above T g . The reversible change in the elastic modulus between the glassy and rubbery states of an SMP can be on the order of several hundred times. Based on the change in stiffness of the SMP in relation to the change in temperature, the present study attempts to evaluate the application of the SMP to soft actuators of a robot. In order to control the temperature of the SMP, we developed an SMP sheet with an embedded electrical heating wire. We formed a uniform, thin SMP sheet without air bubbles using a heat press. The SMP sheet with a heating wire can be heated quickly and can be maintained at a constant temperature. Moreover, the effects of the embedded wire on the mechanical properties in bending and tensile tests were small. Then, we applied the SMP sheet with the embedded electrical heating wire to a pneumatic artificial rubber muscle. The enhanced versatility of SMP sheet applications is demonstrated through a series of experiments conducted using a prototype. The initial shape and bending displacement of the pneumatic artificial rubber muscle can be changed by controlling the temperature of the SMP sheet. (paper)

  6. An Effective Design of Electrically Conducting Thin-Film Composite (TFC) Membranes for Bio and Organic Fouling Control in Forward Osmosis (FO).

    Science.gov (United States)

    Liu, Qing; Qiu, Guanglei; Zhou, Zhengzhong; Li, Jingguo; Amy, Gary Lee; Xie, Jianping; Lee, Jim Yang

    2016-10-04

    The organic foulants and bacteria in secondary wastewater treatment can seriously impair the membrane performance in a water treatment plant. The embedded electrode approach using an externally applied potential to repel organic foulants and inhibit bacterial adhesion can effectively reduce the frequency of membrane replacement. Electrode embedment in membranes is often carried out by dispensing a conductor (e.g., carbon nanotubes, or CNTs) in the membrane substrate, which gives rise to two problems: the leaching-out of the conductor and a percolation-limited membrane conductivity that results in an added energy cost. This study presents a facile method for the embedment of a continuous electrode in thin-film composite (TFC) forward osmosis (FO) membranes. Specifically, a conducting porous carbon paper is used as the understructure for the formation of a membrane substrate by the classical phase inversion process. The carbon paper and the membrane substrate polymer form an interpenetrating structure with good stability and low electrical resistance (only about 1Ω/□). The membrane-electrode assembly was deployed as the cathode of an electrochemical cell, and showed good resistance to organic and microbial fouling with the imposition of a 2.0 V DC voltage. The carbon paper-based FO TFC membranes also possess good mechanical stability for practical use.

  7. Sheet, ligament and droplet formation in swirling primary atomization

    Science.gov (United States)

    Shao, Changxiao; Luo, Kun; Chai, Min; Fan, Jianren

    2018-04-01

    We report direct numerical simulations of swirling liquid atomization to understand the physical mechanism underlying the sheet breakup of a non-turbulent liquid swirling jet which lacks in-depth investigation. The volume-of-fluid (VOF) method coupled with adapted mesh refinement (AMR) technique in GERRIS code is employed in the present simulation. The mechanisms of sheet, ligament and droplet formation are investigated. It is observed that the olive-shape sheet structure is similar to the experimental result qualitatively. The numerical results show that surface tension, pressure difference and swirling effect contribute to the contraction and extension of liquid sheet. The ligament formation is partially at the sheet rim or attributed to the extension of liquid hole. Especially, the movement of hairpin vortex exerts by an anti-radial direction force to the sheet surface and leads to the sheet thinness. In addition, droplet formation is attributed to breakup of ligament and central sheet.

  8. Sheet, ligament and droplet formation in swirling primary atomization

    Directory of Open Access Journals (Sweden)

    Changxiao Shao

    2018-04-01

    Full Text Available We report direct numerical simulations of swirling liquid atomization to understand the physical mechanism underlying the sheet breakup of a non-turbulent liquid swirling jet which lacks in-depth investigation. The volume-of-fluid (VOF method coupled with adapted mesh refinement (AMR technique in GERRIS code is employed in the present simulation. The mechanisms of sheet, ligament and droplet formation are investigated. It is observed that the olive-shape sheet structure is similar to the experimental result qualitatively. The numerical results show that surface tension, pressure difference and swirling effect contribute to the contraction and extension of liquid sheet. The ligament formation is partially at the sheet rim or attributed to the extension of liquid hole. Especially, the movement of hairpin vortex exerts by an anti-radial direction force to the sheet surface and leads to the sheet thinness. In addition, droplet formation is attributed to breakup of ligament and central sheet.

  9. Sheet pinch devices

    International Nuclear Information System (INIS)

    Anderson, O.A.; Baker, W.R.; Ise, J. Jr.; Kunkel, W.B.; Pyle, R.V.; Stone, J.M.

    1958-01-01

    Three types of sheet-like discharges are being studied at Berkeley. The first of these, which has been given the name 'Triax', consists of a cylindrical plasma sleeve contained between two coaxial conducting cylinders A theoretical analysis of the stability of the cylindrical sheet plasma predicts the existence of a 'sausage-mode' instability which is, however, expected to grow more slowly than in the case of the unstabilized linear pinch (by the ratio of the radial dimensions). The second pinch device employs a disk shaped discharge with radial current guided between flat metal plates, this configuration being identical to that of the flat hydromagnetic capacitor without external magnetic field. A significant feature of these configurations is the absence of a plasma edge, i.e., there are no regions of sharply curved magnetic field lines anywhere in these discharges. The importance of this fact for stability is not yet fully investigated theoretically. As a third configuration a rectangular, flat pinch tube has been constructed, and the behaviour of a flat plasma sheet with edges is being studied experimentally

  10. Two-dimensional models for the optical response of thin films

    Science.gov (United States)

    Li, Yilei; Heinz, Tony F.

    2018-04-01

    In this work, we present a systematic study of 2D optical models for the response of thin layers of material under excitation by normally incident light. The treatment, within the framework of classical optics, analyzes a thin film supported by a semi-infinite substrate, with both the thin layer and the substrate assumed to exhibit local, isotropic linear response. Starting from the conventional three-dimensional (3D) slab model of the system, we derive a two-dimensional (2D) sheet model for the thin film in which the optical response is described by a sheet optical conductivity. We develop criteria for the applicability of this 2D sheet model for a layer with an optical thickness far smaller than the wavelength of the light. We examine in detail atomically thin semi-metallic and semiconductor van-der-Waals layers and ultrathin metal films as representative examples. Excellent agreement of the 2D sheet model with the 3D slab model is demonstrated over a broad spectral range from the radio frequency limit to the near ultraviolet. A linearized version of system response for the 2D model is also presented for the case where the influence of the optically thin layer is sufficiently weak. Analytical expressions for the applicability and accuracy of the different optical models are derived, and the appropriateness of the linearized treatment for the materials is considered. We discuss the advantages, as well as limitations, of these models for the purpose of deducing the optical response function of the thin layer from experiment. We generalize the theory to take into account in-plane anisotropy, layered thin film structures, and more general substrates. Implications of the 2D model for the transmission of light by the thin film and for the implementation of half- and totally absorbing layers are discussed.

  11. Effects of electron pressure anisotropy on current sheet configuration

    International Nuclear Information System (INIS)

    Artemyev, A. V.; Angelopoulos, V.; Runov, A.; Vasko, I. Y.

    2016-01-01

    Recent spacecraft observations in the Earth's magnetosphere have demonstrated that the magnetotail current sheet can be supported by currents of anisotropic electron population. Strong electron currents are responsible for the formation of very thin (intense) current sheets playing the crucial role in stability of the Earth's magnetotail. We explore the properties of such thin current sheets with hot isotropic ions and cold anisotropic electrons. Decoupling of the motions of ions and electrons results in the generation of a polarization electric field. The distribution of the corresponding scalar potential is derived from the electron pressure balance and the quasi-neutrality condition. We find that electron pressure anisotropy is partially balanced by a field-aligned component of this polarization electric field. We propose a 2D model that describes a thin current sheet supported by currents of anisotropic electrons embedded in an ion-dominated current sheet. Current density profiles in our model agree well with THEMIS observations in the Earth's magnetotail.

  12. Improved transparent-conducting properties in N{sub 2{sup -}} and H{sub 2{sup -}} annealed GaZnO thin films grown on glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Kim, Deukyoung; Lee, Sejoon [Dongguk University, Seoul (Korea, Republic of)

    2012-01-15

    The effects of N{sub 2{sup -}} and H{sub 2{sup -}} annealing on the transparent-conducting properties of Ga-doped ZnO (GaZnO) were examined. The as-grown GaZnO thin film, which was deposited on a soda-lime glass substrate by r.f. magnetron sputtering, exhibited moderate transparent-conducting properties: a resistivity of {approx}10{sup 0} {Omega}{center_dot}cm and an optical transmittance of {approx}86%. After annealing in N{sub 2} or H{sub 2}, the GaZnO samples showed great improvements in both the electrical and the optical properties. Particularly, in the H{sub 2}-annealed sample, a dramatic decrease in the resistivity (7 x 10{sup -4} {Omega}{center_dot}cm) with a considerable increase in the carrier concentration (4.22 x 10{sup 21} cm{sup -3}) was observed. This is attributed to both an increase in the number of Ga-O bonds and a reduction in the number of chemisorbed oxygen atoms though H{sub 2} annealing. The sample revealed an enhanced optical transmittance ({approx}91%), which comes from the Burstein-Moss effect. Namely, a blue-shift of the optical absorption edge, which results from the increased carrier concentration, was observed in the H{sub 2}-annealed sample. The results suggest that hydrogen annealing can help improve the transparent conducting properties of GaZnO via a modification of the electrochemical bonding structures.

  13. Stable proton-conducting Ca-doped LaNbO4 thin electrolyte-based protonic ceramic membrane fuel cells by in situ screen printing

    International Nuclear Information System (INIS)

    Lin Bin; Wang Songlin; Liu Xingqin; Meng Guangyao

    2009-01-01

    In order to develop a simple and cost-effective route to fabricate protonic ceramic membrane fuel cells (PCMFCs), a stable proton-conducting La 0.99 Ca 0.01 NbO 4 (LCN) thin electrolyte was fabricated on a porous NiO-La 0.5 Ce 0.5 O 1.75 (NiO-LDC) anode by in situ screen printing. The key part of this process is to directly print well-mixed ink of La 2 O 3 , CaCO 3 and Nb 2 O 5 instead of pre-synthesized LCN ceramic powder on the anode substrate. After sintering at 1400 deg. C for 5 h, the full dense electrolyte membrane in the thickness of 20 μm was obtained. A single cell was assembled with (La 0.8 Sr 0.2 ) 0.9 MnO 3-δ -La 0.5 Ce 0.5 O 1.75 (LSM-LDC) as cathode and tested with humidified hydrogen as fuel and static air as oxidant. The open circuit voltage (OCV) and maximum power density respectively reached 0.98 V and 65 mW cm -2 at 800 deg. C. Interface resistance of cell under open circuit condition was also investigated.

  14. Stable proton-conducting Ca-doped LaNbO{sub 4} thin electrolyte-based protonic ceramic membrane fuel cells by in situ screen printing

    Energy Technology Data Exchange (ETDEWEB)

    Lin Bin [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China)], E-mail: bin@mail.ustc.edu.cn; Wang Songlin; Liu Xingqin [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China); Meng Guangyao [USTC Laboratory for Solid State Chemistry and Inorganic Membranes, Department of Materials Science and Engineering, University of Science and Technology of China (USTC), Hefei, 230026, Anhui (China)], E-mail: mgym@ustc.edu.cn

    2009-06-10

    In order to develop a simple and cost-effective route to fabricate protonic ceramic membrane fuel cells (PCMFCs), a stable proton-conducting La{sub 0.99}Ca{sub 0.01}NbO{sub 4} (LCN) thin electrolyte was fabricated on a porous NiO-La{sub 0.5}Ce{sub 0.5}O{sub 1.75} (NiO-LDC) anode by in situ screen printing. The key part of this process is to directly print well-mixed ink of La{sub 2}O{sub 3}, CaCO{sub 3} and Nb{sub 2}O{sub 5} instead of pre-synthesized LCN ceramic powder on the anode substrate. After sintering at 1400 deg. C for 5 h, the full dense electrolyte membrane in the thickness of 20 {mu}m was obtained. A single cell was assembled with (La{sub 0.8}Sr{sub 0.2}){sub 0.9}MnO{sub 3-{delta}}-La{sub 0.5}Ce{sub 0.5}O{sub 1.75} (LSM-LDC) as cathode and tested with humidified hydrogen as fuel and static air as oxidant. The open circuit voltage (OCV) and maximum power density respectively reached 0.98 V and 65 mW cm{sup -2} at 800 deg. C. Interface resistance of cell under open circuit condition was also investigated.

  15. Microprobe metrology for direct sheet resistance and mobility characterization

    DEFF Research Database (Denmark)

    Nielsen, Peter Folmer; Petersen, Dirch Hjorth; Lin, Rong

    2012-01-01

    The M4PP measurement technique has gained increased interest from the semiconductor industry for direct sheet resistance measurements on ultra thin layers and small structures/pads. Several fully automatic microRSP probing tools are today in use for in-line sheet resistance measurements on blanket...

  16. Antibubbles and fine cylindrical sheets of air

    KAUST Repository

    Beilharz, D.

    2015-08-14

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a higher-viscosity drop onto a lower-viscosity pool, we have explored new geometries of such air films. In this way we are able to maintain stable air layers which can wrap around the entire drop to form repeatable antibubbles, i.e. spherical air layers bounded by inner and outer liquid masses. Furthermore, for the most viscous drops they enter the pool trailing a viscous thread reaching all the way to the pinch-off nozzle. The air sheet can also wrap around this thread and remain stable over an extended period of time to form a cylindrical air sheet. We study the parameter regime where these structures appear and their subsequent breakup. The stability of these thin cylindrical air sheets is inconsistent with inviscid stability theory, suggesting stabilization by lubrication forces within the submicron air layer. We use interferometry to measure the air-layer thickness versus depth along the cylindrical air sheet and around the drop. The air film is thickest above the equator of the drop, but thinner below the drop and up along the air cylinder. Based on microbubble volumes, the thickness of the cylindrical air layer becomes less than 100 nm before it ruptures.

  17. Antibubbles and fine cylindrical sheets of air

    KAUST Repository

    Beilharz, D.; Guyon, A.; Li, E.  Q.; Thoraval, M.-J.; Thoroddsen, Sigurdur T

    2015-01-01

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispherical sheets of air between the drop and the pool. These air sheets can remain intact until they reach submicron thicknesses, at which point they rupture to form a myriad of microbubbles. By impacting a higher-viscosity drop onto a lower-viscosity pool, we have explored new geometries of such air films. In this way we are able to maintain stable air layers which can wrap around the entire drop to form repeatable antibubbles, i.e. spherical air layers bounded by inner and outer liquid masses. Furthermore, for the most viscous drops they enter the pool trailing a viscous thread reaching all the way to the pinch-off nozzle. The air sheet can also wrap around this thread and remain stable over an extended period of time to form a cylindrical air sheet. We study the parameter regime where these structures appear and their subsequent breakup. The stability of these thin cylindrical air sheets is inconsistent with inviscid stability theory, suggesting stabilization by lubrication forces within the submicron air layer. We use interferometry to measure the air-layer thickness versus depth along the cylindrical air sheet and around the drop. The air film is thickest above the equator of the drop, but thinner below the drop and up along the air cylinder. Based on microbubble volumes, the thickness of the cylindrical air layer becomes less than 100 nm before it ruptures.

  18. Periodic folding of viscous sheets

    Science.gov (United States)

    Ribe, Neil M.

    2003-09-01

    The periodic folding of a sheet of viscous fluid falling upon a rigid surface is a common fluid mechanical instability that occurs in contexts ranging from food processing to geophysics. Asymptotic thin-layer equations for the combined stretching-bending deformation of a two-dimensional sheet are solved numerically to determine the folding frequency as a function of the sheet’s initial thickness, the pouring speed, the height of fall, and the fluid properties. As the buoyancy increases, the system bifurcates from “forced” folding driven kinematically by fluid extrusion to “free” folding in which viscous resistance to bending is balanced by buoyancy. The systematics of the numerically predicted folding frequency are in good agreement with laboratory experiments.

  19. Thermoelectric properties of TiNiSn and Zr0.5Hf0.5NiSn thin films and superlattices with reduced thermal conductivities

    International Nuclear Information System (INIS)

    Jaeger, Tino

    2013-01-01

    Rising energy costs and enhanced CO 2 emission have moved research about thermoelectric (TE) materials into focus. The suitability of a material for usage in TE devices depends on the figure of merit ZT and is equal to α 2 σTκ -1 including Seebeck coefficient α, conductivity σ, temperature T and thermal conductivity κ. Without affecting the power factor α 2 σ, using nanostructuring, ZT should here be increased by a depressed thermal conductivity. As half-Heusler (HH) bulk materials, the TE properties of TiNiSn and Zr 0.5 Hf 0.5 NiSn have been extensively studied. Here, semiconducting TiNiSn and Zr 0.5 Hf 0.5 NiSn thin films were fabricated for the first time by dc magnetron sputtering. On MgO (100) substrates, strongly textured polycrystalline films were obtained at substrate temperatures of about 450 C. The film consisted of grains with an elongation perpendicular to the surface of 55 nm. These generated rocking curves with FWHMs of less than 1 . Structural analyses were performed by X ray diffraction (XRD). Having deposition rates of about 1 nms -1 within shortest time also films in the order of microns were fabricated. For TiNiSn the highest in-plane power factor of about 0.4 mWK -2 m -1 was measured at about 550 K. In addition, at room temperature a cross-plane thermal conductivity of 2.8 Wm -1 K -1 was observed by the differential 3ω method. Because the reduction of thermal conductivity by mass fluctuation is well-known and interface scattering of phonons is expected, superlattices (SL) were fabricated. Therefore, TiNiSn and Zr 0.5 Hf 0.5 NiSn were successively deposited. While the sputter cathodes were continuously running, for fabrication of SLs the substrates were moved from one to another. The high crystal quality of the SLs and the sharp interfaces were proven by satellite peaks (XRD) and Scanning Transmission Electron Microscopy (STEM). For a SL with a periodicity of 21 nm (TiNiSn and Zr 0.5 Hf 0.5 NiSn each 15 nm) at a temperature of 550 K an

  20. Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

    Science.gov (United States)

    Samanta, Piyas

    2017-09-01

    We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.