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Sample records for thickness thicker films

  1. Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

    Directory of Open Access Journals (Sweden)

    Yen-Hua Chen

    2012-01-01

    Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

  2. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    Energy Technology Data Exchange (ETDEWEB)

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

    2010-11-10

    A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  3. Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

    International Nuclear Information System (INIS)

    Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

    2010-01-01

    A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

  4. Film thickness in gas-liquid two-phase flow, (2)

    International Nuclear Information System (INIS)

    Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

    1977-01-01

    The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

  5. Aluminum oxide film thickness and emittance

    International Nuclear Information System (INIS)

    Thomas, J.K.; Ondrejcin, R.S.

    1991-11-01

    Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

  6. Influence of substrate and film thickness on polymer LIPSS formation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

    2017-02-01

    Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  7. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  8. Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

    Science.gov (United States)

    Krantz, Timothy Lewis

    2013-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

  9. Effect of thickness on optical properties of thermally evaporated SnS films

    International Nuclear Information System (INIS)

    Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

    2013-01-01

    The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

  10. Critical current density and microstructure of YBa2Cu3O7-x films as a function of film thickness

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Turner, L.G.; Hall, E.L.; Lewis, N.

    1990-01-01

    Thin films of nominal composition YBa 2 Cu 3 O 7-x (YBCO) were produced on (100) SrTiO 3 substrates by coevaporation and furnace annealing. Film thicknesses in the range of 0.2 to 2.4 μm were analyzed. Microstructural investigations by cross sectional transmission electron microscopy (TEM) reveal a continuous layer of about 0.4 μm thickness adjacent to the substrate with c-axis normal to the substrate plane. In thicker films the remaining top portion has the c-axis in the film plane. The critical current density (J c ) at 77 K decreases with increasing thickness in the thickness range exceeding 0.4 μm, qualitatively consistent with the microstructural observation, but quantitatively inconsistent with a simple model based on the microstructural data

  11. Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

    Science.gov (United States)

    You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

    2013-06-28

    The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

  12. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

    Science.gov (United States)

    Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

    2017-10-01

    Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

  13. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Science.gov (United States)

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  14. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  15. Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

    Energy Technology Data Exchange (ETDEWEB)

    Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-01-31

    The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

  16. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi; Katuri, Krishna; Kavanagh, Paul; Kumar, Amit Ravi Pradeep; Leech, Dó nal

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  17. Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates

    Science.gov (United States)

    Pahlke, Patrick; Sieger, Max; Ottolinger, Rick; Lao, Mayraluna; Eisterer, Michael; Meledin, Alexander; Van Tendeloo, Gustaaf; Hänisch, Jens; Holzapfel, Bernhard; Schultz, Ludwig; Nielsch, Kornelius; Hühne, Ruben

    2018-04-01

    Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 μm using pulsed laser deposition with a growth rate of about 1.2 nm s-1. Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 μm, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J c of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I c increases up to a thickness of 5 μm. A comparison between films with a thickness of 1.3 μm revealed that the anisotropy of the critical current density J c(θ) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B∣∣c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J c values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.

  18. Study on optimizing ultrasonic irradiation period for thick polycrystalline PZT film by hydrothermal method.

    Science.gov (United States)

    Ohta, Kanako; Isobe, Gaku; Bornmann, Peter; Hemsel, Tobias; Morita, Takeshi

    2013-04-01

    The hydrothermal method utilizes a solution-based chemical reaction to synthesize piezoelectric thin films and powders. This method has a number of advantages, such as low-temperature synthesis, and high purity and high quality of the product. In order to promote hydrothermal reactions, we developed an ultrasonic assisted hydrothermal method and confirmed that it produces dense and thick lead-zirconate-titanate (PZT) films. In the hydrothermal method, a crystal growth process follows the nucleation process. In this study, we verified that ultrasonic irradiation is effective for the nucleation process, and there is an optimum irradiation period to obtain thicker PZT films. With this optimization, a 9.2-μm-thick PZT polycrystalline film was obtained in a single deposition process. For this film, ultrasonic irradiation was carried out from the beginning of the reaction for 18 h, followed by a 6 h deposition without ultrasonic irradiation. These results indicate that the ultrasonic irradiation mainly promotes the nucleation process. Copyright © 2012 Elsevier B.V. All rights reserved.

  19. Thickness dependent structural ordering, degradation and metastability in polysilane thin films: A photoluminescence study on representative σ-conjugated polymers

    International Nuclear Information System (INIS)

    Urbánek, Pavel; Kuřitka, Ivo

    2015-01-01

    We present a fundamental experimental study based on the fluorescence investigation of thin σ-conjugated polymer films, where the dependence of optoelectrical properties and UV degradation on film thickness ranging from nano- to microscale was studied. Such extensive and detailed study was performed for the first time and observed spectral shifts in emission and excitation spectra and UV degradation retardation point towards the conclusions that there exists a threshold thickness where the material degradation behavior, electron delocalization and structure suddenly change. The development of well aligned polymeric chain structure between the nano- and micrometer thickness (on the mesoscale) was shown responsible for the manifested phenomena. The material thicker than critical 500 nm has extremely small Stokes' shift, maximum extended σ-delocalization along the silicon polymer backbone and exhibits remarkable UV degradation slowdown and self-recovery ability. On the contrary, the electronic properties of thin films below 80 nm resemble those of random coils in solutions. The films of moderate thickness show relatively steep transition between these two modes of structural ordering and resulting properties. Altogether, we consider this complex phenomenon as a consequence of the mesoscale effect, which is an only recently introduced concept in polymer thin films. - Highlights: • Photoluminescence was used as a tool for structural investigation of polysilanes. • Primary study of strong dependence of thin polymer film structure on mesoscale. • A mesoscale effect observed for the first time on sigma conjugated polymers. • Conjugation length is dramatically extended in thicker films than in nanoscale. • Self-recovery effect was shown to be dependent on the mesoscale as well.

  20. The effect of wet film thickness on VOC emissions from a finishing varnish.

    Science.gov (United States)

    Lee, Shun-Cheng; Kwok, Ngai-Hong; Guo, Hai; Hung, Wing-Tat

    2003-01-20

    Finishing varnishes, a typical type of oil-based varnishes, are widely used to shine metal, wood trim and cabinet surfaces in Hong Kong. The influence of wet film thickness on volatile organic compound (VOC) emissions from a finishing varnish was studied in an environmental test chamber. The varnish was applied on an aluminium foil with three different wet film thickness (35.2, 69.9 and 107.3 microm). The experimental conditions were 25.0 degrees C, 50.0% relative humidity (RH) with an air exchange rate of 0.5 h(-1). The concentrations of the major VOCs were monitored for the first 10 h. The air samples were collected by canisters and analysed by gas chromatography/mass selective detector (GC/MSD). Six major VOCs including toluene, chlorobenzene, ethylbenzene, m,p-xylene, o-xylene and 1,3,5-trimethylbenzene were identified and quantified. Marked differences were observed for three different film thicknesses. VOC concentrations increased rapidly during the first few hours and then decreased as the emission rates declined. The thicker the wet film, the higher the VOC emissions. A model expression included an exponentially decreasing emission rate of varnish film. The concentration and time data measured in the chamber were used to determine the parameters of empirical emission rate model. The present work confirmed that the film thickness of varnish influenced markedly the concentrations and emissions of VOCs. Copyright 2002 Elsevier Science B.V.

  1. Equilibrium helium film in the thick film limit

    International Nuclear Information System (INIS)

    Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

    2003-01-01

    For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

  2. Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

    Energy Technology Data Exchange (ETDEWEB)

    Melo, M.; Araújo, E. B., E-mail: eudes@dfq.feis.unesp.br [Departamento de Física e Química, Faculdade de Engenharia de Ilha Solteira, UNESP—Univ. Estadual Paulista, 15385-000 Ilha Solteira, SP (Brazil); Shvartsman, V. V. [Institute for Materials Science, University Duisburg-Essen, 45141 Essen (Germany); Shur, V. Ya. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Kholkin, A. L. [Institute of Natural Sciences, Ural Federal University, 620000 Ekaterinburg (Russian Federation); Department of Physics and CICECO—Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal)

    2016-08-07

    Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

  3. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    International Nuclear Information System (INIS)

    Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

    2014-01-01

    Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

  4. The role of surface preparation in corrosion protection of copper with nanometer-thick ALD alumina coatings

    Energy Technology Data Exchange (ETDEWEB)

    Mirhashemihaghighi, Shadi; Światowska, Jolanta [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Maurice, Vincent, E-mail: vincent.maurice@chimie-paristech.fr [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Seyeux, Antoine; Klein, Lorena H. [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France); Salmi, Emma; Ritala, Mikko [Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki (Finland); Marcus, Philippe [PSL Research University, CNRS – Chimie ParisTech, Institut de Recherche de Chimie Paris (IRCP), 11 rue Pierre et Marie Curie, 75005 Paris (France)

    2016-11-30

    Highlights: • 10–50 nm thick alumina coatings were grown on copper by atomic layer deposition. • Surface smoothening by substrate annealing was studied as pre-deposition treatment. • Corrosion protection is promoted by pre-treatment for 10 nm but not for thicker films. • Local adhesion failure is assigned to the stresses accumulated in the thicker films. • Surface smoothening decreases the interfacial strength bearing the film stresses. - Abstract: Surface smoothening by substrate annealing was studied as a pre-treatment for improving the corrosion protection provided to copper by 10, 20 and 50 nm thick alumina coatings deposited by atomic layer deposition. The interplay between substrate surface state and deposited film thickness for controlling the corrosion protection provided by ultrathin barrier films is demonstrated. Pre-annealing at 750 °C heals out the dispersed surface heterogeneities left by electropolishing and reduces the surface roughness to less than 2 nm independently of the deposited film thickness. For 10 nm coatings, substrate surface smoothening promotes the corrosion resistance. However, for 20 and 50 nm coatings, it is detrimental to the corrosion protection due to local detachment of the deposited films. The weaker adherence of the thicker coatings is assigned to the stresses accumulated in the films with increasing deposited thickness. Healing out the local heterogeneities on the substrate surface diminishes the interfacial strength that is bearing the stresses of the deposited films, thereby increasing adhesion failure for the thicker films. Pitting corrosion occurs at the local sites of adhesion failure. Intergranular corrosion occurs at the initially well coated substrate grain boundaries because of the growth of a more defective and permeable coating at grain boundaries.

  5. Contribution of thickness dependent void fraction and TiSixOy interlayer to the optical properties of amorphous TiO2 thin films

    International Nuclear Information System (INIS)

    Zhang, Fan; Zhang, Rong-Jun; Zheng, Yu-Xiang; Xu, Zi-Jie; Zhang, Dong-Xu; Wang, Zi-Yi; Yu, Xiang; Chen, Liang-Yao

    2013-01-01

    The optical properties of TiO 2 thin films prepared by electron beam evaporation were studied by spectroscopic ellipsometry and analyzed quantitatively using effective medium approximation theory and an effective series capacitance model. The refractive indices of TiO 2 are essentially constant and approach to those of bulk TiO 2 for films thicker than 40 nm, but drop sharply with a decrease in thickness from 40 to 5.5 nm. This phenomenon can be interpreted quantitatively by the thickness dependence of the void fraction and interfacial oxide region. The optical band gaps calculated from Tauc law increase with an increase of film thickness, and can be attributed to the contribution of disorder effect. - Highlights: • Amorphous TiO 2 thin films fabricated on Si substrate by electron beam evaporation • The refractive index and band gap are obtained from spectroscopic ellipsometry. • The refractive index decreases with decreasing film thickness. • Effective medium approximation theory and effective series capacitance model introduced • A band gap increases gradually with an increase in film thickness

  6. Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Naoki [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Toko, Kaoru, E-mail: toko@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, Noriyuki; Yoshizawa, Noriko [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2015-05-29

    Amorphous germanium (a-Ge) thin films were directly crystallized on flexible plastic substrates at 325 °C using Al-induced crystallization. The thickness of the plastic substrate strongly influenced the crystal quality of the resulting polycrystalline Ge layers. Using a thicker substrate lowered the stress on the a-Ge layer during annealing, which increased the grain size and fraction of (111)-oriented grains within the Ge layer. Employing a 125-μm-thick substrate led to 95% (111)-oriented Ge with grains having an average size of 100 μm. Transmission electron microscopy demonstrated that the Ge grains had a low-defect density. Production of high-quality Ge films on plastic substrates allows for the possibility for developing Ge-based electronic and optical devices on inexpensive flexible substrates. - Highlights: • Polycrystalline Ge thin films are directly formed on flexible plastic substrates. • Al-induced crystallization allows the low-temperature growth (325 °C) of amorphous Ge. • The substrate bending during annealing strongly influences the crystal quality of poly-Ge. • A thick substrate (125 μm) leads to 95% (111)-oriented Ge with grains 100 μm in size.

  7. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  8. Electroplating moulds using dry film thick negative photoresist

    Science.gov (United States)

    Kukharenka, E.; Farooqui, M. M.; Grigore, L.; Kraft, M.; Hollinshead, N.

    2003-07-01

    This paper reports on progress on the feasibility of fabricating moulds for electroplating using Ordyl P-50100 (negative) acrylate polymer based dry film photoresist, commercially available from Elga Europe (http://www.elgaeurope.it). We used this photoresist as an alternative to SU8 negative epoxy based photoresist, which is very difficult to process and remove after electroplating (Lorenz et al 1998 Microelectron. Eng. 41/42 371-4, Eyre et al 1998 Proc. MEMS'98 (Heidelberg) (Piscataway, NJ: IEEE) pp 218-22). Ordyl P-50100 is easy to work with and can be easily removed after processing. A single layer of Ordyl P-50100 was deposited by lamination up to 20 µm thickness. Thicker layers (200 µm and more) can be achieved with multilayer lamination using a manual laminator. For our applications we found that Ordyl P-50100 dry film photoresist is a very good alternative to SU8 for the realization of 100 µm high moulds. The results presented will open up new possibilities for low-cost LIGA-type processes for MEMS applications.

  9. Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

    Science.gov (United States)

    Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

    2012-04-01

    To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

  10. Thickness dependence of crystallographic and magnetic properties for L10-CoPt thin films

    International Nuclear Information System (INIS)

    Liao, W.M.; Chen, S.K.; Yuan, F.T.; Hsu, C.W.; Lee, H.Y.

    2006-01-01

    Thickness dependence of crystallographic and magnetic properties is investigated from the analyses of the order parameter S, chemically ordered fraction f 0 , and internal stress of the L1 0 Co 49 Pt 51 film. Coercivity H c was increased from 5.1kOe to a maximum value of 13.3kOe as the thickness of the film (δ) was raised from 10nm to 50nm.This is due to the increase of S from 0.30 to 0.64 and the increase of f 0 from 0.52 to 0.75. For thicker samples (δ-bar 50nm), a dramatic drop-off in H c was observed at δ=80nm. The quantity of ordered phase, measured by X-ray diffractometry, is closely related to the H c value of the Co 49 Pt 51 thin film for δ 49 Pt 51 samples is harmful for H c . The decrease in H c can also be partially attributed to the thermal-stress-induced (001) texture

  11. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang; Wang, Shuo; Liu, Hanxiao; Ponce, Fernando A.; Detchprohm, Theeradetch; Dupuis, Russell D.

    2017-01-01

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  12. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang

    2017-01-11

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  13. Thickness dependence of electro-optical properties of WO{sub 3} films as an electrochromic functional material for energy-efficient applications

    Energy Technology Data Exchange (ETDEWEB)

    Esmail, Ayat; Hashem, Hany; Soltan, Soltan; Hammam, Mahmoud; Ramadan, Ahmed [Faculty of Science, Department of Physics, Helwan University, Cairo (Egypt)

    2017-01-15

    WO{sub 3} films of different thicknesses (100, 200, and 300 nm) were prepared by two vacuum physical vapor deposition (PVD) methods (thermal evaporation and an electron gun). Electrophysical measurements (cyclic voltammetry and chronoamperometry) were carried out using a potentiostat in an electrochromic cell (liquid device) that consists of a substrate coated with double layers of F: SnO{sub 2} and WO{sub 3} served as working electrodes. X-ray diffraction showed an amorphous structure for all the deposited WO{sub 3} thin films. While the transmission in the bleached state does not change and it is close to the as-deposited state, it is slightly less at larger thickness. The cyclic voltammogram was more open (more current flow) for thicker films due to the less dense structure with many channels. Also, the coloration efficiency was higher at low thickness. The response time was of the order of seconds and decreased for coloration, while it increased for the bleaching process as the film thickness increases. According to the proposed figure of merit, the electrochromic performance deteriorates as the WO{sub 3} film thickness decreases. However, the thickness is more effective in the case of an electron gun. Generally, continuous films but thinner than 200 nm, are recommended for deposition methods. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Experimental Comparison of the Behavior between Base Oil and Grease Starvation Based on Inlet Film Thickness

    Directory of Open Access Journals (Sweden)

    D. Kostal

    2017-03-01

    Full Text Available This paper deals with the experimental study of an elastohydrodynamic contact under conditions of insufficient lubricant supply. Starvation level of this type of the contact may be experimentally determined based on the position of the meniscus, but this way can't determine all levels of starvation. Consequent development in the field of tribology achieved theoretical model that can determine all levels of starvation by dependency on the thickness of the lubricant film entering the contact, but it is difficult for experimental verification. The main goal of this work is an experimental study and description of the behavior of the elastohydrodynamic contact with controlled thickness of the lubricant film at the contact input. Contact was lubricated by the base oil and the grease and compared. Results were surprising because the only differences between oil and grease were observed for more viscous lubricants at thicker film layer entering to the contact.

  15. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Yao; Long, Hangyu [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Ma, Li, E-mail: marycsupm@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Quiping, E-mail: qiupwei@csu.edu.cn [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Li, Site [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming [School of Material Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Hu, Jingyuan [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Liu, Peizhi [Key laboratory of interface science and engineering in advanced materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024,PR China (China); Wang, Yijia [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Meng, Lingcong [Department of Chemistry, University of Warwick, Coventry, West Midlands CV4 7AL (United Kingdom)

    2016-12-30

    Highlights: • BDD electrodes with different thickness have been fabricated. • BDD electrodes are used for simultaneous detection of DA and AA. • Anodic pretreatment enhance the separation of DA and AA oxidation peak potential. • Thicker BDD electrode show better performance for DA detection coexisting with AA. - Abstract: In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe{sub 3} (CN) {sub 6}]{sup 3−/4−} redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  16. Effects of the thickness of gold deposited on a source backing film in the 4πβ-counting

    International Nuclear Information System (INIS)

    Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

    1976-01-01

    A gold deposited VYNS film as a source backing in the 4πβ-counting has generally been used for reducing the absorption of β-rays. The thickness of the film with the gold is usually a few times thicker than the VYNS film itself. However, Because the appropriate thickness of gold has not yet been determined, the effects of gold thickness on electrical resistivity, plateau characteristics and β-ray counting efficiency were studied. 198 Au (960 keV), 60 Co(315 keV), 59 Fe(273 keV) and 95 Nb(160 keV), which were prepared as sources by the aluminium chloride treatment method, were used. Gold was evaporated under a deposition rate of 1 - 5 μg/cm 2 /min at a pressure less than 1 x 10 -5 Torr. Results show that the gold deposition on the side opposite the source after source preparation is essential. In this case, a maximum counting efficiency is obtained at the mean thickness of 2 μg/cm 2 . When gold is deposited only on the same side as the source, a maximum counting efficiency, which is less than that in the former case, is obtained at the mean thickness of 20 μg/cm 2 . (Evans, J.)

  17. Fuel film thickness measurements using refractive index matching in a stratified-charge SI engine operated on E30 and alkylate fuels

    Science.gov (United States)

    Ding, Carl-Philipp; Sjöberg, Magnus; Vuilleumier, David; Reuss, David L.; He, Xu; Böhm, Benjamin

    2018-03-01

    This study shows fuel film measurements in a spark-ignited direct injection engine using refractive index matching (RIM). The RIM technique is applied to measure the fuel impingement of a high research octane number gasoline fuel with 30 vol% ethanol content at two intake pressures and coolant temperatures. Measurements are conducted for an alkylate fuel at one operating case, as well. It is shown that the fuel volume on the piston surface increases for lower intake pressure and lower coolant temperature and that the alkylate fuel shows very little spray impingement. The fuel films can be linked to increased soot emissions. A detailed description of the calibration technique is provided and measurement uncertainties are discussed. The dependency of the RIM signal on refractive index changes is measured. The RIM technique provides quantitative film thickness measurements up to 0.9 µm in this engine. For thicker films, semi-quantitative results of film thickness can be utilized to study the distribution of impinged fuel.

  18. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  19. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  20. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  1. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  2. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  3. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Science.gov (United States)

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

    2012-03-01

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

  4. Zero-order release of poorly water-soluble drug from polymeric films made via aqueous slurry casting.

    Science.gov (United States)

    Zhang, Lu; Alfano, Joy; Race, Doran; Davé, Rajesh N

    2018-05-30

    In spite of significant recent interest in polymeric films containing poorly water-soluble drugs, dissolution mechanism of thicker films has not been investigated. Consequently, release mechanisms of poorly water-soluble drugs from thicker hydroxypropyl methylcellulose (HPMC) films are investigated, including assessing thickness above which they exhibit zero-order drug release. Micronized, surface modified particles of griseofulvin, a model drug of BSC class II, were incorporated into aqueous slurry-cast films of different thicknesses (100, 500, 1000, 1500 and 2000 μm). Films 1000 μm and thicker were formed by either stacking two or more layers of ~500 μm, or forming a monolithic thick film. Compared to monolithic thick films, stacked films required simpler manufacturing process (easier casting, short drying time) and resulted in better critical quality attributes (appearance, uniformity of thickness and drug per unit area). Both the film forming approaches exhibited similar release profiles and followed the semi-empirical power law. As thickness increased from 100 μm to 2000 μm, the release mechanism changed from Fickian diffusion to zero-order release for films ≥1000 μm. The diffusional power law exponent, n, achieved value of 1, confirming zero-order release, whereas the percentage drug release varied linearly with sample surface area, and sample thickness due to fixed sample diameter. Thus, multi-layer hydrophilic polymer aqueous slurry-cast thick films containing poorly water-soluble drug particles provide a convenient dosage form capable of zero-order drug release with release time modulated through number of layers. Copyright © 2018 Elsevier B.V. All rights reserved.

  5. Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

    Science.gov (United States)

    Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

    2011-11-01

    In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation.

  6. Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

    International Nuclear Information System (INIS)

    Lee, Sung Sik; Kim, Young H.

    2005-01-01

    In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

  7. Thick-film analysis: literature search and bibliography

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

  8. Influence of processing parameters on PZT thick films

    International Nuclear Information System (INIS)

    Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

    2005-01-01

    We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

  9. The Thickness Dependence of Optical Constants of Ultrathin Iron Films

    International Nuclear Information System (INIS)

    Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

    2013-01-01

    Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

  10. Measuring and overcoming limits of the Saffman-Delbrück model for soap film viscosities.

    Science.gov (United States)

    Vivek, Skanda; Weeks, Eric R

    2015-01-01

    We observe tracer particles diffusing in soap films to measure the two-dimensional (2D) viscous properties of the films. Saffman-Delbrück type models relate the single-particle diffusivity to parameters of the film (such as thickness h) for thin films, but the relation breaks down for thicker films. Notably, the diffusivity is faster than expected for thicker films, with the crossover at h/d = 5.2 ± 0.9 using the tracer particle diameter d. This indicates a crossover from purely 2D diffusion to diffusion that is more three-dimensional. We demonstrate that measuring the correlations of particle pairs as a function of their separation overcomes the limitations of the Saffman-Delbrück model and allows one to measure the viscosity of a soap film for any thickness.

  11. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  12. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    International Nuclear Information System (INIS)

    Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

    2016-01-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  13. Film-thickness and composition dependence of epitaxial thin-film PZT-based

    NARCIS (Netherlands)

    Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

    2013-01-01

    The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

  14. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  15. Conversion of just-continuous metallic films to large particulate substrates for metal-enhanced fluorescence

    OpenAIRE

    Aslan, Kadir; Malyn, Stuart N.; Zhang, Yongxia; Geddes, Chris D.

    2008-01-01

    We report the effects of thermally annealing, non-, just-, and thick continuous silver films for their potential applications in metal-enhanced fluorescence, a near-field concept which can alter the free-space absorption and emissive properties of close-proximity fluorophores (excited states). We have chosen to anneal a noncontinuous particulate film 5 nm thick and two thicker continuous films, 15 and 25 nm thick, respectively. Our results show that the annealing of the 25 nm film has little ...

  16. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  17. Film thickness determination by grazing incidence diffraction

    International Nuclear Information System (INIS)

    Battiston, G. A.; Gerbasi, R.

    1996-01-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

  18. Interferometric measurement of film thickness during bubble blowing

    Science.gov (United States)

    Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

    2017-06-01

    In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

  19. NdFeB thick films prepared by tape casting

    International Nuclear Information System (INIS)

    Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

    2003-01-01

    NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

  20. Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

    International Nuclear Information System (INIS)

    Breiland, W.G.; Lee, S.R.; Koleske, D.D.

    2004-01-01

    When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

  1. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  2. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  3. Tuning the thickness of electrochemically grafted layers in large area molecular junctions

    Energy Technology Data Exchange (ETDEWEB)

    Fluteau, T.; Bessis, C.; Barraud, C., E-mail: clement.barraud@univ-paris-diderot.fr; Della Rocca, M. L.; Lafarge, P. [Université Paris Diderot, Sorbonne Paris Cité, MPQ, UMR 7162, CNRS, 75205 Paris Cedex 13 (France); Martin, P.; Lacroix, J.-C. [Université Paris Diderot, Sorbonne Paris Cité, ITODYS, UMR 7086, CNRS, 15 rue J.-A. de Baïf, 75205 Paris Cedex 13 (France)

    2014-09-21

    We have investigated the thickness, the surface roughness, and the transport properties of oligo(1-(2-bisthienyl)benzene) (BTB) thin films grafted on evaporated Au electrodes, thanks to a diazonium-based electro-reduction process. The thickness of the organic film is tuned by varying the number of electrochemical cycles during the growth process. Atomic force microscopy measurements reveal the evolution of the thickness in the range of 2–27 nm. Its variation displays a linear dependence with the number of cycles followed by a saturation attributed to the insulating behavior of the organic films. Both ultrathin (2 nm) and thin (12 and 27 nm) large area BTB-based junctions have then been fabricated using standard CMOS processes and finally electrically characterized. The electronic responses are fully consistent with a tunneling barrier in case of ultrathin BTB film whereas a pronounced rectifying behavior is reported for thicker molecular films.

  4. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  5. Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

    Science.gov (United States)

    Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

    2018-05-01

    Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

  6. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  7. One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

    International Nuclear Information System (INIS)

    Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

    2006-01-01

    A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

  8. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  9. Magnetization reversal mechanism of Nd-Fe-B films with perpendicular magnetic anisotropy

    International Nuclear Information System (INIS)

    Liu Xiaoxi; Ishida, Go; Morisako, Akimitsu

    2011-01-01

    The microstructure and magnetic properties of Nd-Fe-B films with thicknesses from 100 nm to 3 nm have been investigated. All the films show excellent perpendicular magnetic anisotropy with a squareness ratio of 1 in the perpendicular direction and almost zero coercivity in the in-plane direction. Of particular interest is that the initial magnetization curves sensitively depended on the film thickness. Films thicker than 15 nm show steep initial magnetization curve. Although the films have coercivities larger than 21 kOe, the films can be fully magnetized from the thermally demagnetized state with a field as small as 5 kOe. With the decrease of film thickness to 5 nm, the initial magnetization curve becomes flat. The evolution of initial magnetization curves with film thickness can be understood by the microstructure of the films. Films with thickness of 15 nm show close-packed grains without any intergranular phases. Such microstructures lead to steep initial magnetization curves. On the other hand, when the film thickness decreased to 3 nm, the film thickness became nonuniform. Such microstructure leads to flat initial magnetization curves.

  10. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  11. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  12. A new attempt of measurement film thickness by x-ray diffractometry

    International Nuclear Information System (INIS)

    Kosaka, Masao; Kobayashi, Hideo

    1987-01-01

    In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

  13. Ordering process of sputtered FePt films

    International Nuclear Information System (INIS)

    Takahashi, Y.K.; Ohnuma, M.; Hono, K.

    2003-01-01

    We have investigated the in situ ordering process of sputtered FePt thin films deposited on heated substrates at 300 deg. C with different thicknesses. The films thinner than 50 nm were composed of nanograins (∼5 nm) of disordered FePt phase. Recrystallization occurred when films were grown thicker than 100 nm, and transformation twins were observed in recrystallized grains, in which ordering to the L1 0 structure was confirmed

  14. Film thickness determining method of the silicon isotope superlattices by SIMS

    International Nuclear Information System (INIS)

    Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

    2008-01-01

    It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

  15. Electroplated thick-film cobalt platinum permanent magnets

    International Nuclear Information System (INIS)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-01-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

  16. High-throughput measurement of polymer film thickness using optical dyes

    Science.gov (United States)

    Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

    2005-01-01

    Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

  17. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  18. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

    Science.gov (United States)

    Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  19. Nano-Hydroxyapatite Thick Film Gas Sensors

    International Nuclear Information System (INIS)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

    2011-01-01

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  20. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-03

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  1. Electroplated thick-film cobalt platinum permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

    2016-10-15

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

  2. Measurement of the thickness of thin films by backscattered protons

    International Nuclear Information System (INIS)

    Samaniego, L.E.Q.

    1976-07-01

    The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

  3. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    International Nuclear Information System (INIS)

    Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

    2011-01-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  4. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  5. Effect of thickness and composition on the structure and ordering in La-doped intergranular films between Si{sub 3}N{sub 4} crystals

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Yun [Interfacial Molecular Science Laboratory, Department of Materials Science and Engineering, Rutgers University, 607 Taylor Rd., Piscataway, NJ 08855 (United States); Garofalini, Stephen H., E-mail: shg@rutgers.edu [Interfacial Molecular Science Laboratory, Department of Materials Science and Engineering, Rutgers University, 607 Taylor Rd., Piscataway, NJ 08855 (United States)

    2011-08-15

    Molecular dynamics simulations were used to determine the effect of the composition and thickness on the atomistic structure of La-Si-O-N intergranular films (IGFs) between prism and misaligned high-index silicon nitride crystals. Results showed that ordered La adsorption onto the prism-terminated surface is not affected by the orientation of the opposing crystal, although the extent of the ordering away from the interface is affected by IGF thickness. La adsorption at ordered sites 1 and 2 on the prism surface occurred for almost all of the compositions in both 1.8 and 0.6 nm thick IGFs and at sites farther from the prism interface in the thicker IGF, similar to adsorption in triple points. La adsorption on the prism surface occurred at sites precisely the same as seen in high-angle annular dark field scanning transmission electron microscopy studies. Saturation of available sites is affected by the thickness of the IGF, which governs the number of La ions (and N ions) in the IGF, with lower site filling in the thinner IGF. There are clear energy differences for La in the interior of the IGF vs. the interface based on composition and IGF thickness, with the thicker IGF showing greater variation in driving forces for segregation or La incorporation into the IGF. Fracture is affected by both composition and thickness and occurs in the glassy IGF and not in the ordered interfacial regions, consistent with experimentally observed intergranular fracture for La-doped silicon nitride. Segregation of La to the interface affects N distribution within the interior of the IGF, which affects strength.

  6. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  7. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  8. Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

    Science.gov (United States)

    Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

    2014-08-01

    We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

  9. A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

    OpenAIRE

    Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

    2001-01-01

    A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

  10. Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

    Science.gov (United States)

    Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

    2015-09-01

    Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

  11. Order in nanometer thick intergranular films at Au-sapphire interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

    2011-08-15

    Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

  12. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    International Nuclear Information System (INIS)

    Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

  13. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

    2016-11-15

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

  14. A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

    International Nuclear Information System (INIS)

    Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

    1977-01-01

    The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

  15. Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

    Science.gov (United States)

    Singh, N.; Sharma, S.

    2018-04-01

    Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

  16. Thicker endometrial linings are associated with better IVF outcomes: a cohort of 6331 women.

    Science.gov (United States)

    Holden, Emily C; Dodge, Laura E; Sneeringer, Rita; Moragianni, Vasiliki A; Penzias, Alan S; Hacker, Michele R

    2017-06-18

    Our objective was to determine if a correlation exists between endometrial thickness measured on the day of ovulation trigger during an in vitro fertilization (IVF) cycle and pregnancy outcomes among non-cancelled cycles. We performed a retrospective cohort study looking at 6331 women undergoing their first, fresh autologous IVF cycle from 1 May 2004 to 31 December 2012 at Boston IVF (Waltham, MA). Our primary outcome was the risk ratio (RR) of live birth and positive β-hCG. We found that thicker endometrial linings were associated with positive β-hCG and live birth rates. For each additional millimetre of endometrial thickness, we found a statistically significant increased risk of positive β-hCG (adjusted RR: 1.14; 95% CI: 1.09-1.18) and live birth (RR: 1.08; 95% CI: 1.05-1.11). There was no association between endometrial thickness and miscarriage (RR: 0.99; 95% CI: 0.91-1.07). Similar results were seen when categorizing endometrial thickness. Compared with an endometrial thickness >7 to <11 mm, the likelihood of a live birth was significantly higher for an endometrial thickness ≥11 mm (adjusted RR: 1.23; 95% CI: 1.11-1.37) and significantly lower for the ≤7 mm group (adjusted RR: 0.64; 95% CI: 0.45-0.90). In conclusion, thicker endometrial linings were associated with increased pregnancy and live birth rates.

  17. Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

    International Nuclear Information System (INIS)

    Comes, Ryan; Gu Man; Khokhlov, Mikhail; Lu Jiwei; Wolf, Stuart A.

    2012-01-01

    CoFe 2 O 4 (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface. - Highlights: → X-ray diffraction and rocking curves indicate films are amongst highest quality in the literature. → Domain structure of CoFe 2 O 4 films on MgO was found to be stripe-like using MFM. → Critical thickness for misfit dislocations estimated and agrees with experiment. → Effect of misfit dislocations on surface morphology explained. → Role of dislocations and antiphase boundaries in domain wall formation and motion explained.

  18. Influence of interface layer on optical properties of sub-20 nm-thick TiO2 films

    Science.gov (United States)

    Shi, Yue-Jie; Zhang, Rong-Jun; Li, Da-Hai; Zhan, Yi-Qiang; Lu, Hong-Liang; Jiang, An-Quan; Chen, Xin; Liu, Juan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

    2018-02-01

    The sub-20 nm ultrathin titanium dioxide (TiO2) films with tunable thickness were deposited on Si substrates by atomic layer deposition (ALD). The structural and optical properties were acquired by transmission electron microscopy, atomic force microscopy and spectroscopic ellipsometry. Afterwards, a constructive and effective method of analyzing interfaces by applying two different optical models consisting of air/TiO2/Ti x Si y O2/Si and air/effective TiO2 layer/Si, respectively, was proposed to investigate the influence of interface layer (IL) on the analysis of optical constants and the determination of band gap of TiO2 ultrathin films. It was found that two factors including optical constants and changing components of the nonstoichiometric IL could contribute to the extent of the influence. Furthermore, the investigated TiO2 ultrathin films of 600 ALD cycles were selected and then annealed at the temperature range of 400-900 °C by rapid thermal annealing. Thicker IL and phase transition cause the variation of optical properties of TiO2 films after annealing and a shorter electron relaxation time reveals the strengthened electron-electron and electron-phonon interactions in the TiO2 ultrathin films at high temperature. The as-obtained results in this paper will play a role in other studies of high dielectric constants materials grown on Si substrates and in the applications of next generation metal-oxide-semiconductor devices.

  19. On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films

    NARCIS (Netherlands)

    Van Hao, B.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

    2013-01-01

    This work reports on the determination and comparison of the resistivity of ultra-thin atomic layer deposited titanium nitride films in the thickness range 0.65–20 nm using spectroscopic ellipsometry and electrical test structures. We found that for films thicker than 4 nm, the resistivity values

  20. Percolation effect in thick film superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

    1994-12-31

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

  1. Percolation effect in thick film superconductors

    International Nuclear Information System (INIS)

    Sali, R.; Harsanyi, G.

    1994-01-01

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

  2. Thickness dependence of J_c (0) in MgB_2 films

    International Nuclear Information System (INIS)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-01-01

    Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

  3. A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

    International Nuclear Information System (INIS)

    Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

    1988-01-01

    Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

  4. Film thickness in gas-liquid two-phase flow, (4)

    International Nuclear Information System (INIS)

    Fukano, Toru; Sekoguchi, Kotohiko; Kawakami, Yasushi; Shimizu, Hideo.

    1979-01-01

    This paper reports in detail on the thinning process of water film by means of the drainage that appears directly under an obstacle inserted against the flow into the gas-liquid two-phase flow in a tube. The equipment is the same as that used for the first study, in which the orifice type obstacle of 5 mm long having the area ratio of 0.235 was used. This obstacle is the one for which the most significant drainage was observed in the previous study. The change of liquid film in course of time was measured by the constant current method as described before. First, the premising conditions and duration of the drainage are considered. In the thinning by drainage, water film became about 0.1 mm at the early stage of 0.1 sec from its start, then the whole water film became the flow governed by viscosity (called viscous water film). After this state, the film became thinner very slowly. The viscous film is thicker as it is apart farther from the obstacle. If the flow conditions show significant drainage, the duration of drainage directly under the obstacle is nearly equal to the passing time of gas slug. When the thinning of water film is accelerated by drainage, it might cause the possible disappearance of water film when gas slug passes, even if the thermal load is comparatively low. (Wakatsuki, Y.)

  5. Anomalous size effect in conductivity of Bi films of small thickness

    International Nuclear Information System (INIS)

    Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

    1995-01-01

    Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

  6. Hexaferrite multiferroics: from bulk to thick films

    Science.gov (United States)

    Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

    2018-03-01

    We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

  7. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

    2016-02-21

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  8. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    International Nuclear Information System (INIS)

    Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

    2016-01-01

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

  9. The thickness of native oxides on aluminum alloys and single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Evertsson, J., E-mail: jonas.evertsson@sljus.lu.se [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Bertram, F. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Zhang, F. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Rullik, L.; Merte, L.R.; Shipilin, M. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Soldemo, M.; Ahmadi, S. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Vinogradov, N.; Carlà, F. [ESRF, B.P. 220, 38043 Grenoble (France); Weissenrieder, J.; Göthelid, M. [KTH Royal Institute of Technology, ICT, Material Physics, 16440 Kista (Sweden); Pan, J. [KTH Royal Institute of Technology, Department of Chemistry, Division of Surface and Corrosion Science, Drottning Kristinas Vg 51, 100 44 Stockholm (Sweden); Mikkelsen, A. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden); Nilsson, J.-O. [Sapa Technology, Kanalgatan 1, 612 31 Finspång (Sweden); Lundgren, E. [Division of Synchrotron Radiation Research, Lund University, Box 118, 221 00 Lund (Sweden)

    2015-09-15

    Highlights: • We have determined the native oxide film thickness on several Al samples. • The results obtained from XRR and XPS show excellent agreement. • The results obtained from EIS show consistently thinner oxide films. • The oxides on the alloys are thicker than the oxides on the single crystals. - Abstract: We present results from measurements of the native oxide film thickness on four different industrial aluminum alloys and three different aluminum single crystals. The thicknesses were determined using X-ray reflectivity, X-ray photoelectron spectroscopy, and electrochemical impedance spectroscopy. In addition, atomic force microscopy was used for micro-structural studies of the oxide surfaces. The reflectivity measurements were performed in ultra-high vacuum, vacuum, ambient, nitrogen and liquid water conditions. The results obtained using X-ray reflectivity and X-ray photoelectron spectroscopy demonstrate good agreement. However, the oxide thicknesses determined from the electrochemical impedance spectroscopy show a larger discrepancy from the above two methods. In the present contribution the reasons for this discrepancy are discussed. We also address the effect of the substrate type and the presence of water on the resultant oxide thickness.

  10. Structural anisotropy of magnetically aligned single wall carbon nanotube films

    International Nuclear Information System (INIS)

    Smith, B. W.; Benes, Z.; Luzzi, D. E.; Fischer, J. E.; Walters, D. A.; Casavant, M. J.; Schmidt, J.; Smalley, R. E.

    2000-01-01

    Thick films of aligned single wall carbon nanotubes and ropes have been produced by filtration/deposition from suspension in strong magnetic fields. We measured mosaic distributions of rope orientations in the film plane, for samples of different thicknesses. For an ∼1 μm film the full width at half maximum (FWHM) derived from electron diffraction is 25 degree sign -28 degree sign . The FWHM of a thicker film (∼7 μm) measured by x-ray diffraction is slightly broader, 35±3 degree sign . Aligned films are denser than ordinary filter-deposited ones, and much denser than as-grown material. Optimization of the process is expected to yield smaller FWHMs and higher densities. (c) 2000 American Institute of Physics

  11. The effect of bubble acceleration on the liquid film thickness in micro tubes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2010-08-15

    Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

  12. The effect of bubble acceleration on the liquid film thickness in micro tubes

    International Nuclear Information System (INIS)

    Han, Youngbae; Shikazono, Naoki

    2010-01-01

    Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

  13. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  14. Thickness dependence of the strain, band gap and transport properties of epitaxial In{sub 2}O{sub 3} thin films grown on Y-stabilised ZrO{sub 2}(111)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, K H L; Oropeza, F E; Egdell, R G [Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Mansfield Road, Oxford OX1 3TA (United Kingdom); Lazarov, V K [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Veal, T D; McConville, C F [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Walsh, A, E-mail: Russell.egdell@chem.ox.ac.uk [Department of Chemistry, Kathleen Lonsdale Materials Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2011-08-24

    Epitaxial films of In{sub 2}O{sub 3} have been grown on Y-stabilised ZrO{sub 2}(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm{sup 2} V{sup -1} s{sup -1}. The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

  15. Sub-10 ohm resistance gold films prepared by removal of ligands from thiol-stabilized 6 nm gold nanoparticles.

    Science.gov (United States)

    Sugden, Mark W; Richardson, Tim H; Leggett, Graham

    2010-03-16

    The optical and electrical properties of dodecanethiol-stabilized nanoparticles (6 nm diameter gold core) have been investigated over a range of film thicknesses and temperatures. The surface plasmon resonance absorbance is found to be dependent on temperature. Heating of the nanoparticle film causes desorption of the thiol from the surface of the gold nanoparticle, resulting in irreversible changes to the absorption spectra of the nanoparticle film. Atomic force microscopy images of the samples before and after heating for different film thicknesses reveal structural changes and increased domain connectivity for thicker films leading to sub-10 ohm resistances measured for the 15-layer film.

  16. Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

    Science.gov (United States)

    You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

    2010-09-21

    Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

  17. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  18. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  19. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

    2010-01-01

    In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

  20. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  1. Thick-film effects in the oxidation and hydriding of zirconium alloys

    International Nuclear Information System (INIS)

    Johnson, A.B. Jr.

    1989-08-01

    One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

  2. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  3. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  4. The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

    Science.gov (United States)

    Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

    2018-05-01

    We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

  5. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  6. Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

    Directory of Open Access Journals (Sweden)

    Kuo-Ching Kuo

    2007-04-01

    Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

  7. The effect of silver thickness on the enhancement of polymer based SERS substrates

    International Nuclear Information System (INIS)

    Schneidewind, H; Weber, K; Zeisberger, M; Hübner, U; Dellith, A; Cialla-May, D; Mattheis, R; Popp, J

    2014-01-01

    We investigated silver-covered polymer based nanogratings as substrates for surface-enhanced Raman spectroscopy (SERS), in particular with respect to the thickness of the plasmonically active silver film. In order to obtain accurate geometrical input data for the simulation process, we inspected cross sections of the gratings prepared by breaking at cryogenic temperature. We noticed a strong dependence of the simulation results on geometrical variations of the structures. Measurements revealed that an increasing silver film thickness on top of the nanogratings leads to a blue shift of the plasmonic resonance, as predicted by numerical simulations, as well as to an increased field enhancement for an excitation at 488 nm. We found a clear deviation of the experimental data compared to the simulated results for very thin silver films due to an island-like growth at a silver thickness below 20 nm. In order to investigate the SERS activity. we carried out measurements with crystal violet as a model analyte at an excitation wavelength of 488 nm. The SERS enhancement increases up to a silver thickness of about 30 nm, whereas it remains nearly constant for thicker silver films. (paper)

  8. Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

    International Nuclear Information System (INIS)

    Phelan, P.E.; Chen, G.; Tien, C.L.

    1991-01-01

    Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

  9. Thickness dependence of Hall mobility of HWE grown PbTe films

    International Nuclear Information System (INIS)

    Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

    1985-01-01

    Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

  10. An investigation of fatigue in LIGA Ni MEMS thin films

    International Nuclear Information System (INIS)

    Allameh, S.M.; Lou, J.; Kavishe, F.; Buchheit, T.; Soboyejo, W.O.

    2004-01-01

    This paper presents results of an experimental study of fatigue in LIGA Ni micro-electro-mechanical systems (MEMS)/thin films produced by electroplating from a sulfamate bath at a current density of 50 mA/cm 2 . Following a brief description of microstructure and micro-tensile properties, the results of stress-life (S-N) experiments are presented for specimens with thicknesses of 70 and 270 μm. Specimens with the thicker cross-sections (270 μm thick) are shown to have comparable fatigue resistance to annealed bulk Ni in the as-plated condition. The thinner specimens (70 μm thick) have comparable fatigue resistance to hardened Ni, and better fatigue resistance than the thicker samples. The underlying fatigue fracture modes are elucidated via scanning electron microscopy. The implications of the results are then discussed for the failure analysis of LIGA Ni MEMS structures

  11. Thickness of residual wetting film in liquid-liquid displacement

    Science.gov (United States)

    Beresnev, Igor; Gaul, William; Vigil, R. Dennis

    2011-08-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  12. Comparison of different methods for measuring the passive film thickness on metals

    International Nuclear Information System (INIS)

    Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

    2016-01-01

    Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

  13. Ultrathin NbN Films for Superconducting Single-Photon Detectors

    International Nuclear Information System (INIS)

    Slysz, W.; Guziewicz, M.; Borysiewicz, M.

    2011-01-01

    We present our research on fabrication and structural and transport characterization of ultrathin superconducting NbN layers deposited on both single-crystal Al 2 O 3 and Si wafers, and SiO 2 and Si 3 N 4 buffer layers grown directly on Si wafers. The thicknesses of our films varied from 6 nm to 50 nm and they were grown using reactive RF magnetron sputtering on substrates maintained at the temperature 850 o C. We have performed extensive morphology characterization of our films using the X-ray diffraction method and atomic force microscopy, and related the results to the type of the substrate used for the film deposition. Our transport measurements showed that even the thinnest, 6 nm thick NbN films had the superconducting critical temperature of 10-12 K, which was increased to 14 K for thicker films. (author)

  14. Application of β plastic film thickness gauge in automatic production of agricultural film

    International Nuclear Information System (INIS)

    Liu Longzhi; Guo Juhao

    1996-01-01

    The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

  15. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  16. The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2011-01-01

    The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

  17. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  18. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Science.gov (United States)

    Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

    2011-01-01

    Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

  19. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Directory of Open Access Journals (Sweden)

    Gunter Hagen

    2011-08-01

    Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

  20. Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

    2015-09-30

    Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

  1. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

    2007-01-01

    machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

  2. Influence of cement film thickness on the retention of implant-retained crowns.

    Science.gov (United States)

    Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

    2013-12-01

    The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

  3. Vapor annealing synthesis of non-epitaxial MgB2 films on glassy carbon

    Science.gov (United States)

    Baker, A. A.; Bayu Aji, L. B.; Bae, J. H.; Stavrou, E.; Steich, D. J.; McCall, S. K.; Kucheyev, S. O.

    2018-05-01

    We describe the fabrication and characterization of 25–800 nm thick MgB2 films on glassy carbon substrates by Mg vapor annealing of sputter-deposited amorphous B films. Results demonstrate a critical role of both the initial B film thickness and the temperature–time profile on the microstructure, elemental composition, and superconducting properties of the resultant MgB2 films. Films with thicknesses of 55 nm and below exhibit a smooth surface, with a roughness of 1.1 nm, while thicker films have surface morphology consisting of elongated nano-crystallites. The suppression of the superconducting transition temperature for thin films scales linearly with the oxygen impurity concentration and also correlates with the amount of lattice disorder probed by Raman scattering. The best results are obtained by a rapid (12 min) anneal at 850 °C with large temperature ramp and cooling rates of ∼540 °C min‑1. Such fast processing suppresses the deleterious oxygen uptake.

  4. Sensitive determination of the Young's modulus of thin films by polymeric microcantilevers

    DEFF Research Database (Denmark)

    Colombi, Paolo; Bergese, Paolo; Bontempi, Elza

    2013-01-01

    A method for the highly sensitive determination of the Young's modulus of TiO2 thin films exploiting the resonant frequency shift of a SU-8 polymer microcantilever (MC) is presented. Amorphous TiO2 films with different thickness ranging from 10 to 125 nm were grown at low temperature (90 °C......) with subnanometer thickness resolution on SU-8 MC arrays by means of atomic layer deposition. The resonant frequencies of the MCs were measured before and after coating and the elastic moduli of the films were determined by a theoretical model developed for this purpose. The Young's modulus of thicker TiO2 films...... (>75 nm) was estimated to be about 110 GPa, this value being consistent with the value of amorphous TiO2. On the other hand we observed a marked decrease of the Young's modulus for TiO2 films with a thickness below 50 nm. This behavior was found not to be related to a decrease of the film mass density...

  5. Wetting phenomena in films of molecular hydrogen isotopes

    International Nuclear Information System (INIS)

    Albrecht, U.; Conradt, R.; Herminghaus, S.; Leiderer, P.

    1996-01-01

    We have investigated various aspects of the wetting behavior of hydrogen films (including the heavier isotopes) using surface plasmon resonance, light scattering, and photoelectron emission. Studies in the vicinity of the triple point (T 3 (H 2 )=13,96 K) confirmed the known >, and gave no indications for a prewetting transition in this range. At low temperatures (T 3 /3) the equilibrium film thickness reaches only a few monolayers. Thicker films, prepared by quench-condensation of H 2 gas at 1.5 K, undergo a dewetting process during annealing: most of the film material contracts to clusters, and in between the films thins down to its equilibrium thickness. This surface diffusion process is thermally activated, with an activation energy of 23 K (in the case of H 2 ). The dewetting kinetics has not revealed any indication for a surface-molten layer on the solid films at low temperatures, or for a superfluid component

  6. Fabrication of thick superconducting films by decantation

    Directory of Open Access Journals (Sweden)

    Julián Betancourt M.

    1991-07-01

    Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

  7. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  8. Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

    International Nuclear Information System (INIS)

    Srivastava, R.P.; De Wagter, C.

    2012-01-01

    The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

  9. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  10. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

  11. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  12. Persistent quantum-size effect in aluminum films up to twelve atoms thick

    International Nuclear Information System (INIS)

    Boettger, J.C.

    1996-01-01

    Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

  13. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  14. The research of device for measuring film thickness of intelligent coating machine

    Directory of Open Access Journals (Sweden)

    Wang Wanjun

    2015-01-01

    Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

  15. Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics

    Science.gov (United States)

    Shu, Deming; Shvydko, Yury; Stoupin, Stanislav; Kim, Kwang-Je

    2018-05-08

    A method and mechanical design for a thin-film diamond crystal mounting apparatus for coherence preservation x-ray optics with optimized thermal contact and minimized crystal strain are provided. The novel thin-film diamond crystal mounting apparatus mounts a thin-film diamond crystal supported by a thick chemical vapor deposition (CVD) diamond film spacer with a thickness slightly thicker than the thin-film diamond crystal, and two groups of thin film thermal conductors, such as thin CVD diamond film thermal conductor groups separated by the thick CVD diamond spacer. The two groups of thin CVD film thermal conductors provide thermal conducting interface media with the thin-film diamond crystal. A piezoelectric actuator is integrated into a flexural clamping mechanism generating clamping force from zero to an optimal level.

  16. CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

    Directory of Open Access Journals (Sweden)

    D. N. CHAVAN

    2011-06-01

    Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

  17. Hydroxyapatite screen-printed thick films: optical and electrical properties

    International Nuclear Information System (INIS)

    Silva, C.C.; Rocha, H.H.B.; Freire, F.N.A.; Santos, M.R.P.; Saboia, K.D.A.; Goes, J.C.; Sombra, A.S.B.

    2005-01-01

    In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al 2 O 3 substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials

  18. Hydroxyapatite screen-printed thick films: optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Silva, C.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Freire, F.N.A. [Departamento de Quimica Orga-circumflex nica e Inorga-circumflex nica-UFC, Caixa Postal 6030, CEP 60455-760, Fortaleza, Ceara (Brazil); Santos, M.R.P. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Saboia, K.D.A. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Goes, J.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Sombra, A.S.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil)]. E-mail: sombra@fisica.ufc.br

    2005-07-15

    In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al{sub 2}O{sub 3} substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials.

  19. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  20. Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    G. H. JAIN

    2008-04-01

    Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

  1. Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

    Directory of Open Access Journals (Sweden)

    D. N. Chavan

    2011-02-01

    Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

  2. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    International Nuclear Information System (INIS)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-01-01

    An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

  3. Thickness-dependence of optical constants for Ta2O5 ultrathin films

    Science.gov (United States)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

    2012-09-01

    An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

  4. Thin dielectric film thickness determination by advanced transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  5. Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

    2010-02-15

    The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

  6. Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

    Science.gov (United States)

    Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

    2018-04-01

    Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

  7. Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

    2014-07-21

    A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

  8. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

    2012-01-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  9. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2012-09-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  10. Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

    International Nuclear Information System (INIS)

    Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

    2013-01-01

    Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

  11. Ethanol vapour sensing properties of screen printed WO 3 thick films

    Indian Academy of Sciences (India)

    The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

  12. Chemical state analysis of oxide thin films using a high resolution double crystal X-ray fluorescence spectrometer

    International Nuclear Information System (INIS)

    Masuda, Hirohisa; Morinaga, Kenji; Ohta, Yoshio.

    1995-01-01

    The chemical state analysis of r.f.-sputtered amorphous oxide thin films was determined by a high resolution X-ray fluorescence spectrometer with double crystals. The polymerization degree of silicate anions in the silicate film was as same as a target (α-Quartz). The oxygen coordination number of Al 3+ ions in the aluminate film was different from a target (α-Al 2 O 3 ), and it was a mixture of 4 and 6 in a spinel-like structure. In CaO-SiO 2 and CaO-Al 2 O 3 films, when the film thickness is thin at the beginning of sputtering, the composition of films are in the shortage of CaO. But when the film thickness become thicker, the composition of films become as same as the target. From the results above, the chemical state of films and their variations with film thickness can be clarified by using the apparatus. (author)

  13. Towards a new thickness-independent gamma radiation plastic film dosimeter

    International Nuclear Information System (INIS)

    Vieira, Marli Barbosa; Araujo, Patricia L.; Araujo, Elma S.

    2013-01-01

    A 100% national single-use gamma radiation plastic film dosimeter is presented in this work. A new approach for the development of this material allowed a step forward in the performance of poly (methyl metacrylate) films (PMMA) colored with bromothymol blue (BTB) acid-base indicator. We manage to improve dosimeter performance by introducing a gamma radiation insensitive dye to compensate film thickness variations. By doing so, we were able to obtain consistent dose-response correlations within a set of samples presenting 46 to 110 micrometers in thickness. Hence, our PMMA/BTB-P film dosimeter is suitable to measure absorbed dose in the 2-100kGy range even when film thickness undergoes more than 100% of variation. In addition, dose response data remain practically unaltered for four months after the exposure, when dosimeter films are kept in dark conditions and under refrigeration. The radiation effects on the optical properties were evaluated for Ultraviolet-Visible (UV-Vis) spectrophotometric analysis. Data of characteristic dose-response correlation in terms of changes in the maximum UV-Vis absorption due to radiation, and stability in time are also described. This potential new product is a promising tool for industrial radiation facilities, especially in gamma sterilization of medical supplies. (author)

  14. Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

    Science.gov (United States)

    Lee, Sang Heon

    2013-05-01

    BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

  15. Preparation and characterization of sol-gel derived TiO2 films

    International Nuclear Information System (INIS)

    Hong, Y.J.; Brungs, M.P.; Chaplin, R.P.; Sizgek, E.

    2001-01-01

    Crack-free transparent titania films have been prepared through a new sol-gel process combined with hydrogen peroxide treatment. Hydrogen peroxide and HCl were used to dissolve amorphous titania powder which is obtained by drying common sol-gel titania sol. The peroxo-titania sol produced a thicker film than the common sol-gel titania sol due to a higher degree of condensation. Film thickness could be further increased by controlled drying conditions of the amorphous titania powder or 'aging' the sol. Polyethylene glycol (PEG) and chemical additives were effective in controlling condensation rate by preventing rapid condensation during curing of the film. When these two components were incorporated, it was possible to create a 0.5μm transparent film and PEG could also control the porosity of the film. The cured film was analysed by XRD and Raman spectroscopy. In order to measure the reflective index and thickness of the titania film, an ellipsometer was used. Copyright (2001) The Australian Ceramic Society

  16. Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

    International Nuclear Information System (INIS)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

    2015-01-01

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  17. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  18. BaF2 POST-DEPOSITION REACTION PROCESS FOR THICK YBCO FILMS

    International Nuclear Information System (INIS)

    SUENAGA, M.; SOLOVYOV, V.F.; WU, L.; WIESMANN, H.J.; ZHU, Y.

    2001-01-01

    The basic processes of the so-called BaF 2 process for the formation of YBa 2 Cu 3 O 7 , YBCO, films as well as its advantages over the in situ formation processes are discussed in the previous chapter. The process and the properties of YBCO films by this process were also nicely described in earlier articles by R. Feenstra, (et al.) Here, we will discuss two pertinent subjects related to fabrication of technologically viable YBCO conductors using this process. These are (1) the growth of thick (>> 1 microm) c-axis-oriented YBCO films and (2) their growth rates. Before the detail discussions of these subjects are given, we first briefly discuss what geometrical structure a YBCO-coated conductor should be. Then, we will provide examples of simple arguments for how thick the YBCO films and how fast their growth rates need to be. Then, the discussions in the following two sections are devoted to: (1) the present understanding of the nucleation and the growth process for YBCO, and why it is so difficult to grow thick c-axis-oriented films (> 3 microm), and (2) our present understanding of the YBCO growth-limiting mechanism and methods to increase the growth rates. The values of critical-current densities J c in these films are of primary importance for the applications,. and the above two subjects are intimately related to the control of J c of the films. In general, the lower the temperatures of the YBCO formation are the higher the values of J c of the films. Thus, the present discussion is limited to those films which are reacted at ∼735 C. This is the lowest temperature at which c-axis-oriented YBCO films (1-3 microm thick) are comfortably grown. It is also well known that the non-c-axis oriented YBCO platelets are extremely detrimental to the values of J c such that their effects on J c dwarf essentially all of other microstructural effects which control J c . Hence, the discussion given below is mainly focused on how to avoid the growth of these crystallites

  19. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  20. Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    D. N. CHAVAN

    2010-12-01

    Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

  1. Attempt to produce both thick and thinned flowing superfluid films

    International Nuclear Information System (INIS)

    Kwoh, D.S.W.; Goodstein, D.L.

    1977-01-01

    As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

  2. Laser Cutting of Thick Diamond Films Using Low-Power Laser

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

    2000-02-01

    Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

  3. AC susceptibility of thin Pb films in intermediate and mixed state

    Energy Technology Data Exchange (ETDEWEB)

    Janu, Zdenek, E-mail: janu@fzu.cz [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Svindrych, Zdenek [Institute of Physics of the AS CR, v.v.i., Na Slovance 2, CZ-182 21 Prague 8 (Czech Republic); Trunecek, Otakar [Charles University in Prague, Faculty of Mathematics and Physics, Ke Karlovu 3, CZ-121 16 Prague 2 (Czech Republic); Kus, Peter; Plecenik, Andrej [Komenius University in Bratislava, Faculty of Mathematics, Physics, and Informatics, Mlynska dolina, 842 48 Bratislava 4 (Slovakia)

    2011-12-15

    Thickness dependent transition in AC susceptibility between intermediate and mixed state in type-I superconducting films. The temperature induced crossover between reversible and irreversible behavior was observed in the thicker film. The temperature dependence of the AC susceptibility in mixed state follows prediction of model based on Bean critical state. The temperature dependence of the harmonics of the complex AC susceptibility in the intermediate state is explained. Thin films of type I superconductors of a thickness comparable or less than a flux penetration length behave like type II superconductors in a mixed state. With decreasing film thickness normal domains carrying a magnetic flux get smaller with smaller number of flux quanta per domain and finally transform into single quantum flux lines, i.e. quantum vortices similar to those found in type II superconductors. We give an evidence of this behavior from the measurements of the nonlinear response of a total magnetic moment to an applied AC magnetic field, directly from the temperature dependence of an AC susceptibility.

  4. Growth of anodic films on compound semiconductor electrodes: InP in aqueous (NH sub 4) sub 2 S

    CERN Document Server

    Buckley, D N

    2002-01-01

    Film formation on compound semiconductors under anodic conditions is discussed. The surface properties of InP electrodes were examined following anodization in a (NH sub 4) sub 2 S electrolyte. The observation of a current peak in the cyclic voltammetric curve was attributed to selective etching of the substrate and a film formation process. AFM images of samples anodized in the sulfide solution revealed surface pitting. Thicker films formed at higher potentials exhibited extensive cracking as observed by optical and electron microscopy, and this was explicitly demonstrated to occur ex situ rather than during the electrochemical treatment. The composition of the thick film was identified as In sub 2 S sub 3 by EDX and XPS. The measured film thickness varies linearly with the charge passed, and comparison between experimental thickness measurements and theoretical estimates for the thickness indicate a porosity of over 70 %. Cracking is attributed to shrinkage during drying of the highly porous film and does n...

  5. Effect of thicker oceanic crust in the Archaean on the growth of continental crust through time

    International Nuclear Information System (INIS)

    Wilks, M.E.

    1988-01-01

    Present crustal evolution models fail to account for the generation of the large volume of continental crust in the required time intervals. All Archaean plate tectonic models, whether invoking faster spreading rates, similar to today's spreading rates, or longer ridge lengths, essentially propose that continental crust has grown by island arc accretion due to the subduction of oceanic crust. The petrological differences that characterize the Archaean from later terrains result from the subduction of hotter oceanic crust into a hotter mantle. If the oceanic crust was appreciably thicker in the Archaean, as geothermal models would indicate, this thicker crust is surely going to have an effect on tectonic processes. A more valid approach is to compare the possible styles of convergence of thick oceanic crust with modern convergence zones. The best modern analog occurs where thick continental crust is colliding with thick continental crust. Oceanic crustal collision on the scale of the present-day Himalayan continental collision zone may have been a frequent occurrence in the Archaean, resulting in extensive partial melting of the hydrous underthrust oceanic crust to produce voluminous tonalite melts, leaving a depleted stabilized basic residuum. Present-day island arc accretion may not have been the dominant mechanism for the growth of the early Archaean crust

  6. Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

    Science.gov (United States)

    Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

    2017-12-01

    The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

  7. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    Science.gov (United States)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  8. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  9. Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

    Science.gov (United States)

    Wang, Li-Min; Wang, Chih-Yi; Jheng, Ciao-Ren; Wu, Syu-Jhan; Sai, Chen-Kai; Lee, Ya-Ju; Chiang, Ching-Yu; Shew, Bor-Yuan

    2016-08-01

    The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ɛ value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10-4 Ω cm, carrier concentration of 6.4 × 1020 cm-3, and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

  10. Magnetic structure of Tb-Fe films with an artificially layered structure

    International Nuclear Information System (INIS)

    Yamauchi, K.; Habu, K.; Sato, N.

    1988-01-01

    The magnetic structure of Tb-Fe films with an artificially layered structure has been investigated by measuring the temperature dependence of the magnetization of the films. Ferrimagnetic coupling between Tb and Fe through the interface was explicitly observed up to about 9-A Tb and 10-A Fe layers. Films with thinner Tb and Fe layers than these thicknesses are composed of only ferrimagnetically coupled Tb-Fe regions. Films with thicker layers of Tb and Fe are composed of ferrimagnetically coupled Tb-Fe, ferromagnetic Fe, ferromagnetic Tb, and/or magnetically compensated Tb regions. The Tb-Fe films exhibit various temperature dependencies of the magnetization corresponding to these magnetic structures

  11. Thick film heater for sensor application

    International Nuclear Information System (INIS)

    Milewski, J; Borecki, M; Kalenik, J; Król, K

    2014-01-01

    A thick film microheater was elaborated. The microheater is intended for fast heating of small volume samples under measurement in optical based system. Thermal analysis of microheater was carried out using finite element method (FEM) for heat transfer calculation as a function of time and space. A nodal heat transfer function was calculated in classical form including all basics mechanisms of heat exchange – heat conduction, convection and radiation were considered. Work focuses on the influence of some construction parameters (ex. length, thermal conductivity of substrate, substrate thickness) on microheater performance. The results show that application of thin substrate of low thermal conductivity and low thickness for miroheater construction and resistor of optimum dimensions leads to significant power consumption decrease and increase of overall optical measurement system performance.

  12. Screen printed nanosized ZnO thick film

    Indian Academy of Sciences (India)

    Unknown

    The ex- tracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. ... racterized and a thick film paste is prepared by adding suitable .... UV peak and a broad green emission which is usually.

  13. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    International Nuclear Information System (INIS)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O; Brunner, M

    2011-01-01

    Temperature sensitive thick films based on spinel-type NiMn 2 O 4 -CuMn 2 O 4 -MnCo 2 O 4 manganites with p- and p + -types of electrical conductivity and their multilayer p + -p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p + -conductive films. Some part of the p + -p structures were of high stability, the relative electrical drift being no more than 1 %.

  14. A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

    Science.gov (United States)

    Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

    2017-10-21

    We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

  15. Semiconducting behavior of the anodically passive films formed on AZ31B alloy

    Directory of Open Access Journals (Sweden)

    A. Fattah-alhosseini

    2014-12-01

    Full Text Available This work includes determination of the semiconductor character and estimation of the dopant levels in the passive film formed on AZ31B alloy in 0.01 M NaOH, as well as the estimation of the passive film thickness as a function of the film formation potential. Mott–Schottky analysis revealed that the passive films displayed n-type semiconductive characteristics, where the oxygen vacancies and interstitials preponderated. Based on the Mott–Schottky analysis, it was shown that the calculated donor density increases linearly with increasing the formation potential. Also, the electrochemical impedance spectroscopy (EIS results indicated that the thickness of the passive film was decreased linearly with increasing the formation potential. The results showed that decreasing the formation potential offer better conditions for forming the passive films with higher protection behavior, due to the growth of a much thicker and less defective films.

  16. Residual stress analysis in thick uranium films

    International Nuclear Information System (INIS)

    Hodge, A.M.; Foreman, R.J.; Gallegos, G.F.

    2005-01-01

    Residual stress analysis was performed on thick, 1-25 μm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0, -200, -300 V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses

  17. Identification of an Actual Strain-Induced Effect on Fast Ion Conduction in a Thin-Film Electrolyte.

    Science.gov (United States)

    Ahn, Junsung; Jang, Ho Won; Ji, Hoil; Kim, Hyoungchul; Yoon, Kyung Joong; Son, Ji-Won; Kim, Byung-Kook; Lee, Hae-Weon; Lee, Jong-Ho

    2018-05-09

    Strain-induced fast ion conduction has been a research area of interest for nanoscale energy conversion and storage systems. However, because of significant discrepancies in the interpretation of strain effects, there remains a lack of understanding of how fast ionic transport can be achieved by strain effects and how strain can be controlled in a nanoscale system. In this study, we investigated strain effects on the ionic conductivity of Gd 0.2 Ce 0.8 O 1.9-δ (100) thin films under well controlled experimental conditions, in which errors due to the external environment could not intervene during the conductivity measurement. In order to avoid any interference from perpendicular-to-surface defects, such as grain boundaries, the ionic conductivity was measured in the out-of-plane direction by electrochemical impedance spectroscopy analysis. With varying film thickness, we found that a thicker film has a lower activation energy of ionic conduction. In addition, careful strain analysis using both reciprocal space mapping and strain mapping in transmission electron microscopy shows that a thicker film has a higher tensile strain than a thinner film. Furthermore, the tensile strain of thicker film was mostly developed near a grain boundary, which indicates that intrinsic strain is dominant rather than epitaxial or thermal strain during thin-film deposition and growth via the Volmer-Weber (island) growth mode.

  18. The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

    2012-03-15

    The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

  19. Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

    International Nuclear Information System (INIS)

    Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

    2017-01-01

    Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

  20. Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

    Science.gov (United States)

    Sun, Yan; Shull, Kenneth; Wang, Jin

    2010-03-01

    The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

  1. Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

    Science.gov (United States)

    Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

    2017-05-04

    An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

  2. Ceramic thick film humidity sensor based on MgTiO3 + LiF

    International Nuclear Information System (INIS)

    Kassas, Ahmad; Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand; Lakiss, Hassan; Hamieh, Tayssir

    2013-01-01

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO 3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO 3 /LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

  3. Influence of Liquid Petroleum Gas on the Electrical Parameters of the WO3 Thick Film

    Directory of Open Access Journals (Sweden)

    R. S. KHADAYATE

    2007-02-01

    Full Text Available In this work, the WO3 thick films were prepared by standard screen-printing technology. These films were characterized by x-ray diffraction (XRD measurements and scanning electron microscopy (SEM. Influence of LPG on the electrical properties of the prepared WO3 thick film is reported. It was observed that the slope of the Arrhenius curves of the WO3 thick film decreased as the medium changed from pure air to 100 ppm LPG in air. From I-V characteristics, it was observed that the WO3 thick film exhibit highest sensitivity to 50 ppm LPG in air at 400oC.

  4. A method for reducing the sloughing of thick blood films for malaria diagnosis.

    Science.gov (United States)

    Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

    2013-07-08

    The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM

  5. Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

    Science.gov (United States)

    Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

    2018-05-01

    A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

  6. Characterization and comparison of thermistor thick films. Topical report

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

  7. Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

    Science.gov (United States)

    Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

    2016-05-01

    Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

  8. Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

    2015-12-15

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  9. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    Energy Technology Data Exchange (ETDEWEB)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

    2011-04-01

    Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

  10. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pryds, N. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)]. E-mail: nini.pryds@risoe.dk; Toftmann, B. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Bilde-Sorensen, J.B. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark); Schou, J. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Linderoth, S. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)

    2006-04-30

    Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced.

  11. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    International Nuclear Information System (INIS)

    Pryds, N.; Toftmann, B.; Bilde-Sorensen, J.B.; Schou, J.; Linderoth, S.

    2006-01-01

    Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced

  12. Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

    2010-10-01

    This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

  13. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  14. Comparison of functional parameters of CsI:Tl crystals and thick films

    International Nuclear Information System (INIS)

    Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

    2013-01-01

    500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

  15. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  16. Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

    International Nuclear Information System (INIS)

    Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

    2014-01-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co 2 FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization

  17. Thickness-Dependent Order-to-Order Transitions of Bolaform-like Giant Surfactant in Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Hao; Yue, Kan; Wang, Jing; Dong, Xue-Hui; Xia, Yanfeng; Jiang, Zhang [X-ray; Thomas, Edwin L. [Department; Cheng, Stephen Z. D.

    2017-09-07

    Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit an irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.

  18. Optical evidence for a self-propagating molten buried layer in germanium films upon nanosecond laser irradiation

    International Nuclear Information System (INIS)

    Vega, F.; Chaoui, N.; Solis, J.; Armengol, J.; Afonso, C.N.

    2005-01-01

    This work describes the phase transitions occurring at the film-substrate interface of amorphous germanium films upon nanosecond laser-pulse-induced melting of the surface. Films with thickness ranging from 50 to 130 nm deposited on glass substrates were studied. Real-time reflectivity measurements with subnanosecond time resolution performed both at the air-film and film-substrate interfaces were used to obtain both surface and in-depth information of the process. In the thicker films (≥80 nm), the enthalpy released upon solidification of a shallow molten surface layer induces a thin buried liquid layer that self-propagates in-depth towards the film-substrate interface. This buried liquid layer propagates with a threshold velocity of 16±1 m/s and causes, eventually, melting at the film-substrate interface. In the thinnest film (50 nm) there is no evidence of the formation of the buried layer. The presence of the self-propagating buried layer for films thicker than 80 nm at low and intermediate laser fluences is discussed in terms of the thermal gradient in the primary melt front and the heat released upon solidification

  19. Superconducting TlCa2Ba2Cu3O9 thick films

    International Nuclear Information System (INIS)

    1994-01-01

    GE Corporate Research and Development's (GE-CRD) program to develop the two-zone silver addition (TZSA) process for fabricating superconducting films of TlCa 2 Ba 2 Cu 3 O 9 has activities in the areas of (1) precursor preparation, (2) the thallium oxide vapor process, (3) the effects of post-synthesis annealing ambient and temperature on superconducting properties, (4) the influence of film stoichiometry and composition on superconducting properties, (5) microstructure and film growth mechanism, (6) the preparation of thicker films, (7) the fabrication of films on flexible substrates, and (8) process scale-up. As part of its effort under the ANL Pilot Center Agreement, GE-CRD has supplied to ANL a complete two-zone furnace, has provided consultation on its use and on the planning of experiments, has processed ANL samples in GE's furnaces to help define optimum process conditions, and has provided precursor and finished films as requested. These contributions are described more fully in the descriptions of the work performed at ANL presented elsewhere in this report. Under the Pilot Center Agreement work at GE-CRD has been directed toward the optimization of the TZSA process with emphasis on (A) process improvement, (B) effects of silver content on film properties, (C) the relationship between microstructure and J c , and (D) toward the assessment of the compatibility of silver substrates with the process chemistry

  20. Vortex pinning landscape in YBa2Cu3O7 films grown by hybrid liquid phase epitaxy

    International Nuclear Information System (INIS)

    Maiorov, B; Kursumovic, A; Stan, L; Zhou, H; Wang, H; Civale, L; Feenstra, R; MacManus-Driscoll, J L

    2007-01-01

    The influence of film thickness and growth rate on the vortex pinning in hybrid liquid phase epitaxy (HLPE) films was explored. Film growth rates as high as 12 nm s -1 (0.7 μm min -1 ) produced high J c films. Weak or no thickness dependence was found in films of thickness ranging from 0.4 to 3 μm. Field and angular measurements of the critical current density (J c ) and the power-law exponent (N) of the current-voltage curves were used to determine the nature of pinning. Films thinner than 0.6 μm showed a higher density of correlated defects parallel to the ab plane than thicker films. Using HLPE, it was possible to achieve very strong pinning in films ∼3 μm thick, yielding critical currents over 300 A cm -1 width at self-field, and as high as 35 A cm -1 width at μ 0 H = 3 T at T = 75.5 K. Decreasing the deposition rate allowed improving the high field performance, opening up the possibility to engineer the pinning landscape of the HLPE films

  1. Effects of rework on adhesion of Pb-In soldered gold thick films

    International Nuclear Information System (INIS)

    Gehman, R.W.; Becka, G.A.; Losure, J.A.

    1982-02-01

    The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

  2. Structure of ultrathin Pd films determined by low-energy electron microscopy and diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Santos, B; De la Figuera, J [Centro de Microanalisis de Materiales, Universidad Autonoma de Madrid, Madrid 28049 (Spain); Puerta, J M; Cerda, J I [Instituto de Ciencia de Materiales, CSIC, Madrid 28049 (Spain); Herranz, T [Instituto de Quimica-Fisica ' Rocasolano' , CSIC, Madrid 28006 (Spain); McCarty, K F [Sandia National Laboratories, Livermore, CA 94550 (United States)], E-mail: benitosantos001@gmail.com

    2010-02-15

    Palladium (Pd) films have been grown and characterized in situ by low-energy electron diffraction (LEED) and microscopy in two different regimes: ultrathin films 2-6 monolayers (ML) thick on Ru(0001), and {approx}20 ML thick films on both Ru(0001) and W(110). The thinner films are grown at elevated temperature (750 K) and are lattice matched to the Ru(0001) substrate. The thicker films, deposited at room temperature and annealed to 880 K, have a relaxed in-plane lattice spacing. All the films present an fcc stacking sequence as determined by LEED intensity versus energy analysis. In all the films, there is hardly any expansion in the surface-layer interlayer spacing. Two types of twin-related stacking sequences of the Pd layers are found on each substrate. On W(110) the two fcc twin types can occur on a single substrate terrace. On Ru(0001) each substrate terrace has a single twin type and the twin boundaries replicate the substrate steps.

  3. Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

    Science.gov (United States)

    Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

    2016-09-15

    Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

  4. Electron beam curable polymer thick film

    International Nuclear Information System (INIS)

    Nagata, Hidetoshi; Kobayashi, Takashi

    1988-01-01

    Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

  5. Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2011-03-15

    Research highlights: {yields} Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. {yields} The graphitization of the films increased with increased film thickness. {yields} The wear resistance of the films increased though their adhesion strength decreased. {yields} The corrosion potentials of the films shifted to more negative values. {yields} However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp{sup 2} bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

  6. Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

    International Nuclear Information System (INIS)

    Khun, N.W.; Liu, E.

    2011-01-01

    Research highlights: → Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. → The graphitization of the films increased with increased film thickness. → The wear resistance of the films increased though their adhesion strength decreased. → The corrosion potentials of the films shifted to more negative values. → However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp 2 bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

  7. Effect of diffusion on percolation threshold in thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2009-01-01

    Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

  8. Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan

    2006-01-01

    The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS

  9. Film Thickness and Friction Relationship in Grease Lubricated Rough Contacts

    Directory of Open Access Journals (Sweden)

    David Gonçalves

    2017-08-01

    Full Text Available The relationship between the film generation and the coefficient of friction in grease lubricated contacts was investigated. Ball-on-disc tests were performed under different operating conditions: entrainment speed, lubricant temperature and surface roughness. The tests were performed with fully formulated greases and their base oils. The greases were formulated with different thickener types and also different base oils natures and viscosities. Film thickness measurements were performed in ball-on-glass disc tests, and Stribeck curves were measured in ball-on-steel disc tests with discs of different roughness. The role of the thickener and the base oil nature/viscosity on the film thickness and coefficient of friction was addressed and the greases’ performance was compared based on their formulation.

  10. Thickness and roughness measurements of nano thin films by interference

    Directory of Open Access Journals (Sweden)

    A Sabzalipour

    2011-06-01

    Full Text Available In the standard optical interference fringes approach, by measuring shift of the interference fringes due to step edge of thin film on substrate, thickness of the layer has already been measured. In order to improve the measurement precision of this popular method, the interference fringes intensity curve was extracted and analyzed before and after the step preparation. By this method, one can measure a few nanometers films thickness. In addition, using the interference fringes intensity curve and its fluctuations, the roughness of surface is measured within a few nanometers accuracy. Comparison of our results with some direct methods of thickness and roughness measurements, i.e. using surface profilemeter and atomic force microscopy confirms the accuracy of the suggested improvements.

  11. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Kim, Jong Il [Chonbuk National University, Jeonju (Korea, Republic of)

    2010-06-15

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 {mu}m) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film.

  12. Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

    International Nuclear Information System (INIS)

    Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa; Kim, Jong Il

    2010-01-01

    To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 μm) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film

  13. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  14. Confinement Effects on Host Chain Dynamics in Polymer Nanocomposite Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Kyle J. [Department; Glynos, Emmanouil [Department; Maroulas, Serafeim-Dionysios [Department; Narayanan, Suresh [Advanced; Sakellariou, Georgios [Department; Green, Peter F. [Department; National

    2017-09-07

    Incorporating nanoparticles (NPs) within a polymer host to create polymer nanocomposites (PNCs) while having the effect of increasing the functionality (e.g., sensing, energy conversion) of these materials influences other properties. One challenge is to understand the effects of nanoparticles on the viscosity of nanoscale thick polymer films. A new mechanism that contributes to an enhancement of the viscosity of nanoscale thick polymer/nanoparticle films is identified. We show that while the viscosities of neat homopolymer poly(2-vinylpyridine) (P2VP) films as thin as 50 nm remained the same as the bulk, polymer/nanoparticle films containing P2VP brush-coated gold NPs, spaced 50 nm apart, exhibited unprecedented increases in viscosities of over an order of magnitude. For thicker films or more widely separated NPs, the chain dynamics and viscosities were comparable to the bulk values. These results - NP proximities and suppression of their dynamics - suggest a new mechanism by which the viscosities of polymeric liquids could be controlled for nanoscale applications.

  15. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

    International Nuclear Information System (INIS)

    Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

    2008-01-01

    The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

  16. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Directory of Open Access Journals (Sweden)

    Guowen Ding

    2015-11-01

    Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  17. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    International Nuclear Information System (INIS)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

    2015-01-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

  18. Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

    Directory of Open Access Journals (Sweden)

    C. G. DIGHAVKAR

    2009-02-01

    Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

  19. Pressure dependence of the interfacial structure of potassium chloride films on iron

    International Nuclear Information System (INIS)

    Olson, Dustin; Gao, Hongyu; Tang, Chun; Tysoe, Wilfred T.; Martini, Ashlie

    2015-01-01

    Potassium chloride films on a clean iron surface are used as a model system to explore the interfacial structure of the films and the dependence of that structure on film thickness and pressure. The interfacial structure of one-, two-, three- and four-layer films is measured experimentally using low-energy electron diffraction. Those findings are then complemented by molecular dynamics simulations in which the atomic interaction between the film and substrate is tuned to match film thickness-dependent sublimation activation energy obtained from temperature-programmed desorption measurements. The resultant simulation reliably predicts the structure of thicker films and is then used to study the effect of pressure on the distribution of the lattice constant within and between each layer of the potassium chloride films. Findings indicate that both film thickness and pressure affect the structure within the films as well as the degree of registry between the film and adjacent substrate. - Highlights: • KCl films on an Fe surface are used as a model system to explore interfacial structure • Thin film structure is measured using low-energy electron diffraction • An empirical potential is tuned to match sublimation activation energy • Simulations reveal the effect of pressure on the lattice constant within the KCl films • Pressure affects the film structure and registry between film and substrate

  20. Pressure dependence of the interfacial structure of potassium chloride films on iron

    Energy Technology Data Exchange (ETDEWEB)

    Olson, Dustin [Department of Chemistry and Laboratory for Surface Studies, University of Wisconsin—Milwaukee, Milwaukee, WI 53211 (United States); Gao, Hongyu; Tang, Chun [School of Engineering, University of California Merced, Merced CA 95343 (United States); Tysoe, Wilfred T. [Department of Chemistry and Laboratory for Surface Studies, University of Wisconsin—Milwaukee, Milwaukee, WI 53211 (United States); Martini, Ashlie [School of Engineering, University of California Merced, Merced CA 95343 (United States)

    2015-10-30

    Potassium chloride films on a clean iron surface are used as a model system to explore the interfacial structure of the films and the dependence of that structure on film thickness and pressure. The interfacial structure of one-, two-, three- and four-layer films is measured experimentally using low-energy electron diffraction. Those findings are then complemented by molecular dynamics simulations in which the atomic interaction between the film and substrate is tuned to match film thickness-dependent sublimation activation energy obtained from temperature-programmed desorption measurements. The resultant simulation reliably predicts the structure of thicker films and is then used to study the effect of pressure on the distribution of the lattice constant within and between each layer of the potassium chloride films. Findings indicate that both film thickness and pressure affect the structure within the films as well as the degree of registry between the film and adjacent substrate. - Highlights: • KCl films on an Fe surface are used as a model system to explore interfacial structure • Thin film structure is measured using low-energy electron diffraction • An empirical potential is tuned to match sublimation activation energy • Simulations reveal the effect of pressure on the lattice constant within the KCl films • Pressure affects the film structure and registry between film and substrate.

  1. Texture change through film thickness and off-axis accommodation of (0 0 2) planes

    International Nuclear Information System (INIS)

    Shetty, A.R.; Karimi, A.

    2011-01-01

    We present our recent experimental results on the formation of off-axis texture and crystallographic tilting of crystallites that take place in thin film of transition metal nitrides. For this purpose, the microstructural development of TiAlN film was studied, specially the change in texture with film thickness. Fiber texture was measured using θ-2θ and pole figure X-ray diffraction (XRD), while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the microstructure and changes in texture with thickness. The sin 2 ψ method was applied to determine the stresses on (1 1 1) and (0 0 2) plane. With deposition parameters chosen, the growth texture mechanism is discussed in three different stages of film growth. Surface energy minimization at low thickness leads to the development of (0 0 2) orientation. On the other hand, the competitive growth promotes the growth of (1 1 1) planes parallel to film surface at higher thickness. However, contrary to the prediction of growth models, the (0 0 2) grains are not completely overlapped by (1 1 1) grains at higher thickness. Rather the (0 0 2) grains still constitute the surface, but are tilted away from the substrate normal showing substantial in-plane alignment to allow the (1 1 1) planes remain parallel to film surface. Intrinsic stress along (1 1 1) and (0 0 2) shows a strong dependence with preferred orientation. The stress level in (0 0 2) grains which was compressive at low thickness changes to tensile at higher thickness. This change in the nature of stress allows the (0 0 2) planes to tilt away in order to promote the growth of 〈1 1 1〉 parallel to film normal and to minimize the overall energy of system due to high compressive stress stored in the (1 1 1) grains. The change in surface morphology with thickness was observed using SEM. An increase in surface roughness with film thickness was observed which indicates the development of (1 1 1) texture parallel to film

  2. Microscopic image processing system for measuring nonuniform film thickness profiles: Image scanning ellipsometry

    International Nuclear Information System (INIS)

    Liu, A.H.; Plawsky, J.L.; Wayner, P.C. Jr.

    1993-01-01

    The long-term objective of this research program is to determine the stability and heat transfer characteristics of evaporating thin films. The current objective is to develop and use a microscopic image-processing system (IPS) which has two parts: an image analyzing interferometer (IAI) and an image scanning ellipsometer (ISE). The primary purpose of this paper is to present the basic concept of ISE, which is a novel technique to measure the two dimensional thickness profile of a non-uniform, thin film, from several nm up to several μm, in a steady state as well as in a transient state. It is a full-field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. The ISE was tested by measuring the thickness profile and the refractive index of a nonuniform solid film

  3. Low-temperature technique for thick film resist stabilization and curing

    Science.gov (United States)

    Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

    1999-06-01

    For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

  4. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  5. The role of demagnetizing factors in the occurrence of vortex avalanches in Nb thin films

    International Nuclear Information System (INIS)

    Colauto, F; Ortiz, W A; Patino, E J; Aprilli, M

    2009-01-01

    Under specific circumstances, magnetic flux penetrates into superconducting thin films as dendritic flux jumps. The phenomenon has a thermomagnetic origin, where flux motion generates heat that suppresses flux pining and facilitates further flux motion. We have studied the thickness influence on the flux stability for very thin Nb films, 20, 40, 60, and 80 nm, through dc-magnetometry. The thicker the film; the higher is the threshold field where instabilities first take place. Due to the demagnetizing factor in a perpendicular geometry, the effective magnetic field at the border of the film is largely amplified. For thin specimens, a linear dependence between the threshold field and the thickness is expected and has been actually observed. When normalized by the sample aspect ratio, the effective threshold magnetic field is nearly the same for all specimens studied.

  6. The role of demagnetizing factors in the occurrence of vortex avalanches in Nb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Colauto, F; Ortiz, W A [Grupo de Supercondutividade e Magnetismo, Departamento de Fisica, Universidade Federal de Sao Carlos, C P 676, 13565-905, Sao Carlos, SP (Brazil); Patino, E J; Aprilli, M, E-mail: fcolauto@df.ufscar.b [Laboratoire de Physique des Solides, Universite Paris-Sud, C.N.R.S., 91405 Orsay cedex (France)

    2009-03-01

    Under specific circumstances, magnetic flux penetrates into superconducting thin films as dendritic flux jumps. The phenomenon has a thermomagnetic origin, where flux motion generates heat that suppresses flux pining and facilitates further flux motion. We have studied the thickness influence on the flux stability for very thin Nb films, 20, 40, 60, and 80 nm, through dc-magnetometry. The thicker the film; the higher is the threshold field where instabilities first take place. Due to the demagnetizing factor in a perpendicular geometry, the effective magnetic field at the border of the film is largely amplified. For thin specimens, a linear dependence between the threshold field and the thickness is expected and has been actually observed. When normalized by the sample aspect ratio, the effective threshold magnetic field is nearly the same for all specimens studied.

  7. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    International Nuclear Information System (INIS)

    Prakash, Deo; Shaaban, E.R.; Shapaan, M.; Mohamed, S.H.; Othman, A.A.; Verma, K.D.

    2016-01-01

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  8. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

    2016-08-15

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  9. Analysis of thin-film polymers using attenuated total internal reflection-Raman microspectroscopy.

    Science.gov (United States)

    Tran, Willie; Tisinger, Louis G; Lavalle, Luis E; Sommer, André J

    2015-01-01

    Two methods commonly employed for molecular surface analysis and thin-film analysis of microscopic areas are attenuated total reflection infrared (ATR-IR) microspectroscopy and confocal Raman microspectroscopy. In the former method, the depth of the evanescent probe beam can be controlled by the wavelength of light, the angle of incidence, or the refractive index of the internal reflection element. Because the penetration depth is proportional to the wavelength of light, one could interrogate a smaller film thickness by moving from the mid-infrared region to the visible region employing Raman spectroscopy. The investigation of ATR Raman microspectroscopy, a largely unexplored technique available to Raman microspectroscopy, was carried out. A Renishaw inVia Raman microscope was externally modified and used in conjunction with a solid immersion lens (SIL) to perform ATR Raman experiments. Thin-film polymer samples were analyzed to explore the theoretical sampling depth for experiments conducted without the SIL, with the SIL, and with the SIL using evanescent excitation. The feasibility of micro-ATR Raman was examined by collecting ATR spectra from films whose thickness measured from 200 to 60 nm. Films of these thicknesses were present on a much thicker substrate, and features from the underlying substrate did not become visible until the thin film reached a thickness of 68 nm.

  10. Mid-ocean ridges produced thicker crust in the Jurassic than in Recent times

    Science.gov (United States)

    Van Avendonk, H. J.; Harding, J.; Davis, J. K.; Lawver, L. A.

    2016-12-01

    We present a compilation of published marine seismic refraction data to show that oceanic crust was 1.7 km thicker on average in the mid-Jurassic (170 Ma) than along the present-day mid-ocean ridge system. Plate reconstructions in a fixed hotspot framework show that the thickness of oceanic crust does not correlate with proximity to mantle hotspots, so it is likely that mid-plate volcanism is not the cause of this global trend. We propose that more melt was extracted from the upper mantle beneath mid-ocean ridges in the Jurassic than in recent times. Numerical studies show that temperature increase of 1 degree C in the mantle can lead to approximately 50-70 m thicker crust, so the upper mantle may have cooled 15-20 degrees C/100 Myr since 170 Ma. This average temperature decrease is larger than the secular cooling rate of the Earth's mantle, which is roughly 10 degrees C/100 Myr since the Archean. Apparently, the present-day configuration and dynamics of continental and oceanic plates removes heat more efficiently from the Earth's mantle than in its earlier history. The increase of ocean crustal thickness with plate age is also stronger in the Indian and Atlantic oceans than in the Pacific Ocean basin. This confirms that thermal insulation by the supercontinent Pangaea raised the temperature of the underlying asthenospheric mantle, which in turn led to more magmatic output at the Jurassic mid-ocean ridges of the Indian and Atlantic oceans.

  11. Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

    International Nuclear Information System (INIS)

    Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

    2007-01-01

    Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

  12. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  13. Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

    Energy Technology Data Exchange (ETDEWEB)

    Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

    2013-10-15

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

  14. Tape casting and partial melting of Bi-2212 thick films

    Energy Technology Data Exchange (ETDEWEB)

    Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

    1994-12-31

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

  15. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  16. Characterisation of electrodeposited polycrystalline uranium dioxide thin films on nickel foil for industrial applications

    International Nuclear Information System (INIS)

    Adamska, A.M.; Bright, E. Lawrence; Sutcliffe, J.; Liu, W.; Payton, O.D.; Picco, L.; Scott, T.B.

    2015-01-01

    Polycrystalline uranium dioxide thin films were grown on nickel substrates via aqueous electrodeposition of a precursor uranyl salt. The arising semiconducting uranium dioxide thin films exhibited a tower-like morphology, which may be suitable for future application in 3D solar cell applications. The thickness of the homogenous, tower-like films reached 350 nm. Longer deposition times led to the formation of thicker (up to 1.5 μm) and highly porous films. - Highlights: • Electrodeposition of polycrystalline UO_2 thin films • Tower-like morphology for 3D solar cell applications • Novel technique for separation of heavy elements from radioactive waste streams

  17. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  18. Structural, magnetic and transport properties of Co{sub 2}FeAl Heusler films with varying thickness

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xiaotian [School of Material Sciences and Engineering, Hebei University Technology, Tianjin 300130 (China); Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, Yueqing [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004 (China); Du, Yin [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Dai, Xuefang; Liu, Guodong [School of Material Sciences and Engineering, Hebei University Technology, Tianjin 300130 (China); Liu, Enke [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Liu, Zhongyuan [State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004 (China); Wang, Wenhong, E-mail: wenhong.wang@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Guangheng [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-08-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co{sub 2}FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization.

  19. The influence of structure depth on image blurring of micrometres-thick specimens in MeV transmission electron imaging.

    Science.gov (United States)

    Wang, Fang; Sun, Ying; Cao, Meng; Nishi, Ryuji

    2016-04-01

    This study investigates the influence of structure depth on image blurring of micrometres-thick films by experiment and simulation with a conventional transmission electron microscope (TEM). First, ultra-high-voltage electron microscope (ultra-HVEM) images of nanometer gold particles embedded in thick epoxy-resin films were acquired in the experiment and compared with simulated images. Then, variations of image blurring of gold particles at different depths were evaluated by calculating the particle diameter. The results showed that with a decrease in depth, image blurring increased. This depth-related property was more apparent for thicker specimens. Fortunately, larger particle depth involves less image blurring, even for a 10-μm-thick epoxy-resin film. The quality dependence on depth of a 3D reconstruction of particle structures in thick specimens was revealed by electron tomography. The evolution of image blurring with structure depth is determined mainly by multiple elastic scattering effects. Thick specimens of heavier materials produced more blurring due to a larger lateral spread of electrons after scattering from the structure. Nevertheless, increasing electron energy to 2MeV can reduce blurring and produce an acceptable image quality for thick specimens in the TEM. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Spin Seebeck effect in nanometer-thick YIG micro-fabricated strips

    Directory of Open Access Journals (Sweden)

    Martin Collet

    2017-05-01

    Full Text Available We have investigated the spin Seebeck effect (SSE generated by current induced-heating in ultra-thin yttrium iron garnet film (20 nm covered by an 8 nm thick Pt layer. By passing current in the Pt layer, an out-of-plane temperature gradient is established that, in turn, generates an out-of-equilibrium magnons population. The resulting pure spin current is detected using the inverse spin Hall effect (ISHE measured in the Pt electrode. A lock-in detection scheme is used to separate the SSE signal from other magneto-galvanic effect. Indeed, the SSE signal is obtained as the second harmonic voltage response, while spin Hall magnetoresistance (SMR is measured as the first harmonic response to the ac excitation current. Interestingly, the amplitude of the SSE in such thin YIG film is comparable to what has been reported for much thicker films.

  1. Thickness dependence of optical properties of VO2 thin films epitaxially grown on sapphire (0 0 0 1)

    International Nuclear Information System (INIS)

    Xu Gang; Jin Ping; Tazawa, Masato; Yoshimura, Kazuki

    2005-01-01

    Vanadium dioxide (VO 2 ) films were epitaxially grown on α-Al 2 O 3 (0 0 0 1) by rf reactive magnetron sputtering. The effects of film thickness ranging from 3 to 150 nm on optical properties were investigated. It revealed that the semiconductor--metal phase transition temperature considerably decreases as film thickness decreases, in particular for the film with thickness less than 10 nm. On the other hand, we found that the difference in visible transmittance between the two phases of VO 2 also varies with film thickness. For the films with thickness less than 50 nm, the semiconductor phase exhibits lower visible transmittance than its metallic phase, while for those with thickness larger than 50 nm the situation is reversed

  2. Quantum transition and decoherence of levitating polaron on helium film thickness under an electromagnetic field

    Science.gov (United States)

    Kenfack, S. C.; Fotue, A. J.; Fobasso, M. F. C.; Djomou, J.-R. D.; Tiotsop, M.; Ngouana, K. S. L.; Fai, L. C.

    2017-12-01

    We have studied the transition probability and decoherence time of levitating polaron in helium film thickness. By using a variational method of Pekar type, the ground and the first excited states of polaron are calculated above the liquid-helium film placed on the polar substrate. It is shown that the polaron transits from the ground to the excited state in the presence of an external electromagnetic field in the plane. We have seen that, in the helium film, the effects of the magnetic and electric fields on the polaron are opposite. It is also shown that the energy, transition probability and decoherence time of the polaron depend sensitively on the helium film thickness. We found that decoherence time decreases as a function of increasing electron-phonon coupling strength and the helium film thickness. It is seen that the film thickness can be considered as a new confinement in our system and can be adjusted in order to reduce decoherence.

  3. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  4. Thickness dependence of electrical properties in (0 0 1) oriented lead zirconate titanate films by laser ablation

    International Nuclear Information System (INIS)

    Zhu, T.J.; Lu, L.; Lai, M.O.; Soh, A.K.

    2007-01-01

    Highly (0 0 1)-oriented Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films with LaNiO 3 (LNO) bottom electrodes have been fabricated on amorphous TiN buffered Si substrates by pulsed laser deposition. The polarization-electric field (P-E) hysteresis of the deposited PZT films with different thickness ranging from 25 to 850 nm was measured. Results showed that the coercive field increases with the film thickness scaling down. No P-E loops could be obtained for the film of thickness of 25 nm. The deterioration of ferroelectric property in the thinnest film was attributed to extrinsic effect other than intrinsic size effect. Current-voltage (I-V) characteristics measurement showed the increase in leakage current of the PZT films with the decrease in the thickness of the films under the same bias voltage. At a high field regime, the leakage current of the PZT films of 25 nm thickness remained unchanged with increasing applied voltage. A totally depleted back-to-back Shottky barrier model was used to explain the effect of electrode interfaces on leakage current in the PZT films. It is believed that ferroelectric/electrode interfaces play an important role in the electrical properties of ferroelectric thin films with thickness at nanometer level

  5. Thickness dependence of magnetization reversal mechanism in perpendicularly magnetized L1{sub 0} FePt films

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Mei; Wang, Xin, E-mail: xinwang@uestc.edu.cn; Lu, Haipeng; Zhang, Li; Deng, Longjiang; Xie, Jianliang

    2017-04-15

    We have studied the magnetic switching behavior of L1{sub 0}-ordered FePt films with varying thickness. It was found that coercivity is strongly dependent on the film thickness. The obvious variations of the coercivity in the thin films are confirmed by the measurements of structural and magnetic properties. With increasing thickness, the degree of L1{sub 0} chemical ordering increased, while the magnetization reversal process transforms from a pinned two-steps magnetization reversal to a comparatively smooth domain wall motion behavior. Although considering anisotropy, exchange interaction and applied magnetic field, the switching behavior in films is quite complex, the main features of the magnetization reversal mechanism can be understood by performing detailed investigation on the effect of the deposition temperature and the angle of magnetic field. - Highlights: • Series of FePt films with L1{sub 0} phase have been prepared. • We focused on the magnetization reversal mechanism with varying thicknesses. • The angle-dependence of switching process is revealed in the FePt films. • Different switching mechanisms were found by increasing the film thickness.

  6. Humidity sensing properties of WO3 thick film resistor prepared by screen printing technique

    International Nuclear Information System (INIS)

    Garde, Arun S

    2014-01-01

    Highlights: • Polycrystalline WO 3 Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm −1 shows stretching vibrations attributed to W-OH of adsorbed H 2 O. • Absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO 3 thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm −1 clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm −1 are attributed to the stretching W-O-W bonds (i.e. ν [W-O inter -W]). The peak located at 983 cm −1 belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO 3 thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO 3 film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO 3 film sensors have been evaluated

  7. Thickness Measurement of V2O5 Nanometric Thin Films Using a Portable XRF

    Directory of Open Access Journals (Sweden)

    Fabio Lopes

    2016-01-01

    Full Text Available Nanometric thin films have always been chiefly used for decoration; however they are now being widely used as the basis of high technology. Among the various physical qualities that characterize them, the thickness strongly influences their properties. Thus, a new procedure is hereby proposed and developed for determining the thickness of V2O5 nanometric thin films deposited on the glass surface using Portable X-Ray Fluorescence (PXRF equipment and the attenuation of the radiation intensity Kα of calcium present in the glass. It is shown through the present paper that the radiation intensity of calcium Kα rays is proportional to film thickness in nanometric films of vanadium deposited on the glass surface.

  8. Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

    Science.gov (United States)

    Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

    2018-04-01

    Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

  9. Advanced engineering materials and thick film hybrid circuit technology

    International Nuclear Information System (INIS)

    Faisal, S.; Aslam, M.; Mehmood, K.

    2006-01-01

    The use of Thick Film hybrid Technology to manufacture electronic circuits and passive components continues to grow at rapid rate. Thick Film Technology can be viewed as a means of packaging active devices, spanning the gap between monolithic integrated circuit chips and printed circuit boards with attached active and passive components. An advancement in engineering materials has moved from a formulating art to a base of greater understanding of relationship of material chemistry to the details of electrical and mechanical performance. This amazing advancement in the field of engineering materials has brought us up to a magnificent standard that we are able to manufacture small size, low cost and sophisticated electronic circuits of Military, Satellite systems, Robotics, Medical and Telecommunications. (author)

  10. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  11. Thickness of Residual Wetting Film in Liquid-Liquid Displacement in Capillary Channels

    Science.gov (United States)

    Beresnev, I. A.; Gaul, W.; Vigil, D.

    2010-12-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a non-wetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of this wetting film? Understanding this question may determine the ultimate oil recovery. A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. We develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of about 20 % the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  12. X-ray diffractometry of 10 nm thick YBa2Cu3O7-x films

    International Nuclear Information System (INIS)

    Drozdov, Yu.N.; Moldavskaya, L.D.; Parafin, A.E.

    1998-01-01

    We report on some specific features of the X-ray diffraction spectra for ultrathin c-axis-oriented YBCO films. The films were prepared by laser deposition on LaAlO 3 substrates. A DRON-4 powder diffractometer was used to analyze a structure and to measure thickness of the films. We find that this conventional technique can detect the YBCO films as thin as 5 nm. The X-ray interference fringes in the vicinity of the (005) YBCO reflections for the films from 10 to 20 nm thick were clearly visible. The oscillation period of the fringes depends on the thickness of the film and the intensity modulation yields some structural information. The I(-1)/I(+1) fringes intensity ratio was found to be sensitive to the type of atomic layer at the top and bottom of YBCO film [ru

  13. Dewetting dynamics of a gold film on graphene: implications for nanoparticle formation.

    Science.gov (United States)

    Namsani, Sadanandam; Singh, Jayant K

    2016-01-01

    The dynamics of dewetting of gold films on graphene surfaces is investigated using molecular dynamics simulation. The effect of temperature (973-1533 K), film diameter (30-40 nm) and film thickness (0.5-3 nm) on the dewetting mechanism, leading to the formation of nanoparticles, is reported. The dewetting behavior for films ≤5 Å is in contrast to the behavior seen for thicker films. The retraction velocity, in the order of ∼300 m s(-1) for a 1 nm film, decreases with an increase in film thickness, whereas it increases with temperature. However at no point do nanoparticles detach from the surface within the temperature range considered in this work. We further investigated the self-assembly behavior of nanoparticles on graphene at different temperatures (673-1073 K). The process of self-assembly of gold nanoparticles is favorable at lower temperatures than at higher temperatures, based on the free-energy landscape analysis. Furthermore, the shape of an assembled structure is found to change from spherical to hexagonal, with a marked propensity towards an icosahedral structure based on the bond-orientational order parameters.

  14. Development of a metrology method for composition and thickness of barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Remmel, Thomas; Werho, Dennis; Liu, Ran; Chu, Peir

    1998-01-01

    Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

  15. Thin film thickness measurement error reduction by wavelength selection in spectrophotometry

    International Nuclear Information System (INIS)

    Tsepulin, Vladimir G; Perchik, Alexey V; Tolstoguzov, Victor L; Karasik, Valeriy E

    2015-01-01

    Fast and accurate volumetric profilometry of thin film structures is an important problem in the electronic visual display industry. We propose to use spectrophotometry with a limited number of working wavelengths to achieve high-speed control and an approach to selecting the optimal working wavelengths to reduce the thickness measurement error. A simple expression for error estimation is presented and tested using a Monte Carlo simulation. The experimental setup is designed to confirm the stability of film thickness determination using a limited number of wavelengths

  16. Experimental study of the polymer powder film thickness uniformity produced by the corona discharge

    Science.gov (United States)

    Fazlyyyakhmatov, Marsel

    2017-01-01

    The results of an experimental study of the polymer powder film thickness uniformity are presented. Polymer powder films are produced by the electrostatic field of corona discharge. Epoxy and epoxy-polyester powder films with thickness in the range of 30-120 microns are studied. Experimentally confirmed possibility of using these coatings as protective matching layer of piezoceramic transducers at frequencies of 0.5-15 MHz.

  17. Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

    Science.gov (United States)

    Lugo, J. M.; Oliva, A. I.

    2017-02-01

    The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

  18. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    International Nuclear Information System (INIS)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-01-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO 3 film grown on (La 0.3 Sr 0.7 )(Al 0.65 Ta 0.35 )O 3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness

  19. Through-thickness thermal conductivity enhancement of graphite film/epoxy composite via short duration acidizing modification

    Science.gov (United States)

    Wang, Han; Wang, Shaokai; Lu, Weibang; Li, Min; Gu, Yizhou; Zhang, Yongyi; Zhang, Zuoguang

    2018-06-01

    Graphite films have excellent in-plane thermal conductivity but extremely low through-thickness thermal conductivity because of their intrinsic inter-layer spaces. To improve the inter-layer heat transfer of graphite films, we developed a simple interfacial modification with a short duration mixed-acid treatment. The effects of the mixture ratio of sulfuric and nitric acids and treatment time on the through-thickness thermal properties of graphite films were studied. The modification increased the through-thickness thermal conductivity by 27% and 42% for the graphite film and its composite, respectively. X-ray photoelectron spectroscopy, X-ray powder diffraction, and scanning electron microscopy results indicated that the acidification process had two competing effects: the positive contribution made by the enhanced interaction between the graphite layers induced by the functional groups and the negative effect from the destruction of the graphite layers. As a result, an optimal acidification method was found to be sulfuric/nitric acid treatment with a mixture ratio of 3:1 for 15 min. The resultant through-thickness thermal conductivity of the graphite film could be improved to 0.674 W/mK, and the corresponding graphite/epoxy composite shows a through-thickness thermal conductivity of 0.587 W/mK. This method can be directly used for graphite films and their composite fabrication to improve through-thickness thermal conductivity.

  20. Polymer Thick-Film Sensors: Possibilities for Smartcard Biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, Pieter H.

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been

  1. Film thickness measurement based on nonlinear phase analysis using a Linnik microscopic white-light spectral interferometer.

    Science.gov (United States)

    Guo, Tong; Chen, Zhuo; Li, Minghui; Wu, Juhong; Fu, Xing; Hu, Xiaotang

    2018-04-20

    Based on white-light spectral interferometry and the Linnik microscopic interference configuration, the nonlinear phase components of the spectral interferometric signal were analyzed for film thickness measurement. The spectral interferometric signal was obtained using a Linnik microscopic white-light spectral interferometer, which includes the nonlinear phase components associated with the effective thickness, the nonlinear phase error caused by the double-objective lens, and the nonlinear phase of the thin film itself. To determine the influence of the effective thickness, a wavelength-correction method was proposed that converts the effective thickness into a constant value; the nonlinear phase caused by the effective thickness can then be determined and subtracted from the total nonlinear phase. A method for the extraction of the nonlinear phase error caused by the double-objective lens was also proposed. Accurate thickness measurement of a thin film can be achieved by fitting the nonlinear phase of the thin film after removal of the nonlinear phase caused by the effective thickness and by the nonlinear phase error caused by the double-objective lens. The experimental results demonstrated that both the wavelength-correction method and the extraction method for the nonlinear phase error caused by the double-objective lens improve the accuracy of film thickness measurements.

  2. Fabrication and characterization of thick-film piezoelectric lead zirconate titanate ceramic resonators by tape-casting.

    Science.gov (United States)

    Qin, Lifeng; Sun, Yingying; Wang, Qing-Ming; Zhong, Youliang; Ou, Ming; Jiang, Zhishui; Tian, Wei

    2012-12-01

    In this paper, thick-film piezoelectric lead zirconate titanate (PZT) ceramic resonators with thicknesses down to tens of micrometers have been fabricated by tape-casting processing. PZT ceramic resonators with composition near the morphotropic phase boundary and with different dopants added were prepared for piezoelectric transducer applications. Material property characterization for these thick-film PZT resonators is essential for device design and applications. For the property characterization, a recently developed normalized electrical impedance spectrum method was used to determine the electromechanical coefficient and the complex piezoelectric, elastic, and dielectric coefficients from the electrical measurement of resonators using thick films. In this work, nine PZT thick-film resonators have been fabricated and characterized, and two different types of resonators, namely thickness longitudinal and transverse modes, were used for material property characterization. The results were compared with those determined by the IEEE standard method, and they agreed well. It was found that depending on the PZT formulation and dopants, the relative permittivities ε(T)(33)/ε(0) measured at 2 kHz for these thick-films are in the range of 1527 to 4829, piezoelectric stress constants (e(33) in the range of 15 to 26 C/m(2), piezoelectric strain constants (d(31)) in the range of -169 × 10(-12) C/N to -314 × 10(-12) C/N, electromechanical coupling coefficients (k(t)) in the range of 0.48 to 0.53, and k(31) in the range of 0.35 to 0.38. The characterization results shows tape-casting processing can be used to fabricate high-quality PZT thick-film resonators, and the extracted material constants can be used to for device design and application.

  3. State of the art in thin film thickness and deposition rate monitoring sensors

    International Nuclear Information System (INIS)

    Buzea, Cristina; Robbie, Kevin

    2005-01-01

    In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages

  4. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  5. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO₂ Films Deposited by Atomic Layer Deposition.

    Science.gov (United States)

    Wilson, Rachel L; Simion, Cristian Eugen; Blackman, Christopher S; Carmalt, Claire J; Stanoiu, Adelina; Di Maggio, Francesco; Covington, James A

    2018-03-01

    Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO₂ and inferred for TiO₂. In this paper, TiO₂ thin films have been prepared by Atomic Layer Deposition (ALD) using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes), at a temperature of 200 °C. The TiO₂ films were exposed to different concentrations of CO, CH₄, NO₂, NH₃ and SO₂ to evaluate their gas sensitivities. These experiments showed that the TiO₂ film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH₄ and NH₃ exposure indicated typical n -type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

  6. How Do Organic Vapors Swell Ultrathin Films of Polymer of Intrinsic Microporosity PIM-1?

    Science.gov (United States)

    Ogieglo, Wojciech; Rahimi, Khosorov; Rauer, Sebastian Bernhard; Ghanem, Bader; Ma, Xiaohua; Pinnau, Ingo; Wessling, Matthias

    2017-07-27

    Dynamic sorption of ethanol and toluene vapor into ultrathin supported films of polymer of intrinsic microporosity PIM-1 down to a thickness of 6 nm are studied with a combination of in situ spectroscopic ellipsometry and in situ X-ray reflectivity. Both ethanol and toluene significantly swell the PIM-1 matrix and, at the same time, induce persistent structural relaxations of the frozen-in glassy PIM-1 morphology. For ethanol below 20 nm, three effects were identified. First, the swelling magnitude at high vapor pressures is reduced by about 30% as compared to that of thicker films. Second, at low penetrant activities (below 0.3p/p 0 ), films below 20 nm are able to absorb slightly more penetrant as compared with thicker films despite a similar swelling magnitude. Third, for the ultrathin films, the onset of the dynamic penetrant-induced glass transition P g has been found to shift to higher values, indicating higher resistance to plasticization. All of these effects are consistent with a view where immobilization of the superglassy PIM-1 at the substrate surface leads to an arrested, even more rigid, and plasticization-resistant, yet still very open, microporous structure. PIM-1 in contact with the larger and more condensable toluene shows very complex, heterogeneous swelling dynamics, and two distinct penetrant-induced relaxation phenomena, probably associated with the film outer surface and the bulk, are detected. Following the direction of the penetrant's diffusion, the surface seems to plasticize earlier than the bulk, and the two relaxations remain well separated down to 6 nm film thickness, where they remarkably merge to form just a single relaxation.

  7. Design of instantaneous liquid film thickness measurement system for conductive or non-conductive fluid with high viscosity

    Directory of Open Access Journals (Sweden)

    Yongxin Yu

    2017-06-01

    Full Text Available In the paper, a new capacitive sensor with a dielectric film coating was designed to measure the thickness of the liquid film on a flat surface. The measured medium can be conductive or non-conductive fluid with high viscosity such as silicone oil, syrup, CMC solution and melt. With the dielectric film coating, the defects caused by the humidity in a capacitor can be avoided completely. With a excitation frequency 0-20kHz, the static permittivity of capacitive sensor is obtained and stable when small thicknesses are monitored within the frequency of 0-3kHz. Based on the measurement principle, an experimental system was designed and verified including calibration and actual measurement for different liquid film thickness. Experimental results showed that the sensitivity, the resolution, repeatability and linear range of the capacitive sensor are satisfied to the liquid film thickness measurement. Finally, the capacitive measuring system was successfully applied to the water, silicone oil and syrup film thickness measurement.

  8. A study for anticorrosion and tribological behaviors of thin/thick diamond-like carbon films in seawater

    Science.gov (United States)

    Ye, Yewei; Jia, Shujuan; Zhang, Dawei; Liu, Wei; Zhao, Haichao

    2018-03-01

    The thin and thick diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering technique on 304L stainless steels and (100) silicon wafers. Microstructure, mechanical, corrosion and tribological properties were systematically investigated by SEM, Raman, nanoindenter, scratch tester, modulab electrochemical workstation and R-tec multifunctional tribological tester. Results showed that the adhesion force presented a descending trend with the growth in soaking time. The adhesion force of the thin DLC film with high residual compressive stress (‑3.72 GPa) was higher than that of the thick DLC film (‑2.96 GPa). During the corrosion test, the thick DLC film showed a higher impendence and a lower corrosion current density than the thin DLC film, which is attributed to the barrier action of large thickness. Compared to bare 304L substrate, the friction coefficients and wear rates of DLC films in seawater were obviously decreased. Meanwhile, the thin DLC film with ideal residual compressive stress, super adhesion force and good plastic deformation resistance revealed an excellent anti-wear ability in seawater.

  9. The determination of the pressure viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2009-01-01

    The pressure viscosity coefficient is an indispensable property in the EHD lubrication of hard contacts, but often not known. A guess will easily lead to enormous errors in the film thickness. This paper describes a method to deduct this coefficient by adapting the value of the pressure viscosity

  10. The determination of the pressure-viscosity coefficient of two traction oils using film thickness measurements

    NARCIS (Netherlands)

    Leeuwen, van H.J.

    2010-01-01

    The pressure-viscosity coefficients of two commercial traction fluids are determined by fitting calculation results on accurate film thickness measurements, obtained at a wide range of speeds, and different temperatures. Film thickness values are calculated using a numerical method and approximation

  11. Effect of Ni Doping on Gas Sensing Performance of ZnO Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    M. K. DEORE

    2010-11-01

    Full Text Available This work investigates the use of ZnO-NiO as a H2S metal oxide thick film gas sensor. To find the optimum ratio of NiO to ZnO, two compositions were prepared using different molecular percentages and prepared as a thick film paste. These pastes were then screen-printed onto glass substrates with suitable binder. The final composition of each film was determined using SEM analysis. The films were used to detect CO, CL2, ethanol, Amonia and H2S. For each composition tested, the highest responses where displayed for H2S gas. The Thick film having composition of equal molar ZnO and NiO shows the highest response at operating temp. 350 0C for 100 ppm level. The gas response, selectivity, response and recovery time of the sensor were measured and presented. The role played by NiO species is to improve the gas sensing performance is discussed.

  12. Quantifying Local Thickness and Composition in Thin Films of Organic Photovoltaic Blends by Raman Scattering

    KAUST Repository

    Rodríguez-Martínez, Xabier

    2017-07-06

    We report a methodology based on Raman spectroscopy that enables the non-invasive and fast quantitative determination of local thickness and composition in thin films (from few monolayers to hundreds of nm) of one or more components. We apply our methodology to blends of organic conjugated materials relevant in the field of organic photovoltaics. As a first step, we exploit the transfer-matrix formalism to describe the Raman process in thin films including reabsorption and interference effects of the incoming and scattered electric fields. This allows determining the effective solid-state Raman cross-section of each material by studying the dependence of the Raman intensity on film thickness. These effective cross sections are then used to estimate the local thickness and composition in a series of polymer:fullerene blends. We find that the model is accurate within ±10 nm in thickness and ±5 vol% in composition provided that (i) the film thickness is kept below the thickness corresponding to the first maximum of the calculated Raman intensity oscillation; (ii) the materials making up the blend show close enough effective Raman cross-sections; and (iii) the degree of order attained by the conjugated polymer in the blend is similar to that achieved when cast alone. Our methodology opens the possibility to make quantitative maps of composition and thickness over large areas (from microns to centimetres squared) with diffraction-limited resolution and in any multi-component system based thin film technology.

  13. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  14. Electrical and Gas Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen-printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2008-10-01

    Full Text Available Thick films of tin-oxide (SnO2 were deposited on alumina substrates employing screen-printing technique. The films were dried and fired at 680 0C for 30 minutes. The variation of D.C. resistance of thick films was measured in air as well as in H2S gas atmosphere as a function of temperature. The SnO2 films exhibit semiconducting behaviour. The SnO2 thick films studied were also showing decrease in resistance with increase of concentration of H2S gas. The film resistors showed the highest sensitivity to H2S gas at 350 0C. The XRD studies of the thick film indicate the presence of different phases of SnO2. The elemental analysis was confirmed by EDX spectra. The surface morphological study of the films was analyzed by SEM. The microstructure of the films was porous resulting from loosely interconnected small crystallites. The parameters such as grain size, activation energy, sensitivity and response time were described.

  15. Nucleation and strain-stabilization during organic semiconductor thin film deposition.

    Science.gov (United States)

    Li, Yang; Wan, Jing; Smilgies, Detlef-M; Bouffard, Nicole; Sun, Richard; Headrick, Randall L

    2016-09-07

    The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is used to study the growth mechanisms and thermal stability of 6,13-bis(trisopropylsilylethynyl)-pentacene thin films. The results show that the films form in a supersaturated state before transforming to a solid film. Molecular aggregates corresponding to subcritical nuclei in the crystallization process are inferred from optical spectroscopy measurements of the supersaturated region. Strain-free solid films exhibit a temperature-dependent blue shift of optical absorption peaks due to a continuous thermally driven change of the crystalline packing. As crystalline films are cooled to ambient temperature they become strained although cracking of thicker films is observed, which allows the strain to partially relax. Below a critical thickness, cracking is not observed and grazing incidence X-ray diffraction measurements confirm that the thinnest films are constrained to the lattice constants corresponding to the temperature at which they were deposited. Optical spectroscopy results show that the transition temperature between Form I (room temperature phase) and Form II (high temperature phase) depends on the film thickness, and that Form I can also be strain-stabilized up to 135 °C.

  16. Investigation on feasibility and detection limits for determination of coating film thickness by neutron activation analysis

    International Nuclear Information System (INIS)

    Yao Maoying; Xu Jiayun; Zhang Dida; Yang Zunyong; Yao Zhenqiang; Wang Mingqiu; Gao Dangzhong

    2010-01-01

    A method for the determination of coating film thickness by neutron activation was proposed in this paper. After Au, Al and Cu et al.films were activated with a Am-Be neutron source, the characteristic γ-rays emitted by the activated nuclides in the films were counted with a HPGe γ spectrometer. The detection limits of film thickness by using a nuclear reactor neutron source were deduced on the basis of the γ-ray counts and the Monte-Carlo simulated detection efficiencies. The possible detection limits are typically 4-5 orders of magnitude better than those by fluorescent X-ray method, which is currently widely used to determine coating film thickness. (authors)

  17. Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

    Science.gov (United States)

    Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

    2018-05-01

    Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

  18. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  19. Simultaneous measurements of thickness and temperature profile in a wavy liquid film falling freely on a heating wall

    International Nuclear Information System (INIS)

    Lyu, T.; Mudawar, I.

    1990-01-01

    This paper reports on a technique for measuring the thickness of liquid films that was developed and tested. The feasibility of this technique was demonstrated in stagnant liquid films as well as in liquid jets. A procedure for in-situ calibration of the thickness probe was developed, allowing the adaptation of the probe to measurements of wavy liquid films. The thickness probe was constructed from a platinum-rhodium wire that was stretched across the film. A constant DC current was supplied through the probe wire, and film thickness was determined from variations in the probe voltage drop resulting from the large differences in the electrical resistances of the wetted and unwetted segments of the wire. Unlike electrical admittance thickness probes, the new probe did not require dissolving an electrolyte in the liquid, making the new probe well suited to studies involving sensible heating of a film of pure dielectric liquid that is in direct contact with a current- carrying wall. Also presented is a composite probe that facilitated simultaneous measurements of temperature profile across a wavy liquid film and film thickness. Experimental results demonstrate a strong influence of waviness on liquid temperature in a film of deionized water falling freely on the outside wall of a vertical, electrically heated tube for film Reynolds numbers smaller than 10,000

  20. Description of spin reorientation transition in Au/Co/Au sandwich with Co film thickness within a simple phenomenological model of ferromagnetic film

    International Nuclear Information System (INIS)

    Popov, A.P.

    2012-01-01

    Simple phenomenological model of ferromagnetic film characterized by equal energies of surface anisotropies at two sides of a film (symmetric film) is considered. The model is used to describe a two-step spin reorientation transition (SRT) in Au/Co/Au sandwich with Co film thickness: the SRT from perpendicular to canted noncollinear (CNC) state at N ⊥ =6.3 atomic layers and the subsequent SRT from CNC to in-plane state at N ∥ =10.05 atomic layers. Analytic expressions for the stability criterion of collinear perpendicular and in-plane states of a film are derived with account of discrete location of atomic layers. The dependence of borders that separate regions corresponding to various magnetic states of a film in the (k B ,k S )-diagram on film thickness N is established. k S (k B ) is surface (bulk) reduced anisotropy constant. The comparison of theory with experiment related to Au/Co/Au sandwich shows that there is a whole region in the (k B ,k S )-diagram corresponding to experimentally determined values of threshold film thicknesses N ⊥ =6.3 and N ∥ =10.05. The comparison of this region with similar region determined earlier for a bare Co/Au film within the same model of asymmetric film and characterized by N ⊥ =3.5, N ∥ =5.5 shows that the intersection of these regions is not empty. Hence, both the SRT in Au/Co/Au sandwich and in bare Co/Au film with Co film thickness can be described within the same model using the same magnitudes of model parameters k S , k B . Based on this result we conclude that the energy of Neel surface anisotropy at free Co surface is negligible compared to the energy of Co–Au interface anisotropy. It is demonstrated that the destabilization of collinear states in symmetric film leads to occurrence of the ground CNC state and two novel metastable CNC states. These three CNC states exhibit different kinds of symmetry. In case of asymmetric film only ground CNC state occurs on destabilization of collinear states of a film

  1. Surface morphology and in-plane-epitaxy of SmBa2Cu3O7-δ films on SrTiO3 (001) substrates studied by STM and grazing incidence x-ray diffraction

    DEFF Research Database (Denmark)

    Jiang, Q.D.; Smilgies, D.M.; Feidenhans'l, R.

    1996-01-01

    The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films as ...... films above h(c2), introduction of screw dislocations leads to spiral growth.......The surface morphology and in-plane epitaxy of thin films of SmBa(2)Cu3O(7-delta) (Sm-BCO) grown on SrTiO3 (001) substrates with various thicknesses have been investigated by scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXRD). As revealed by GIXRD, SmBCO films...... substrate. Three different types of surface morphology were observed by STM with increasing film thickness h: a) 2D growth for hh(c2). With GIXRD, a density modulation is observed in the films with a thickness below h(c2). For thicker...

  2. Growth of BaTiO3-PVDF composite thick films by using aerosol deposition

    Science.gov (United States)

    Cho, Sung Hwan; Yoon, Young Joon

    2016-01-01

    Barium titanate (BaTiO3)-polyvinylidene fluoride (PVDF) composite thick films were grown by using aerosol deposition at room temperature with BaTiO3 and PVDF powders. To produce a uniform composition in ceramic and polymer composite films, which show a substantial difference in specific gravity, we used PVDF-coated BaTiO3 powders as the starting materials. An examination of the microstructure confirmed that the BaTiO3 were well distributed in the PVDF matrix in the form of a 0 - 3 compound. The crystallite size in the BaTiO3-PVDF composite thick films was 5 ˜ 50 times higher than that in pure BaTiO3 thick films. PVDF plays a role in suppressing the fragmentation of BaTiO3 powder during the aerosol deposition process and in controlling the relative permittivity.

  3. The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

    2016-01-01

    The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

  4. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na

    2013-08-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. Results of the plasmon excitation energy shift and through-thickness elemental concentration show a multilayered a-C film structure comprising an interface layer consisting of C, Si, and, possibly, SiC, a buffer layer with continuously increasing sp 3 fraction, a relatively thicker layer (bulk film) of constant sp 3 content, and an ultrathin surface layer rich in sp 2 hybridization. A detailed study of the C K-edge spectrum indicates that the buffer layer between the interface layer and the bulk film is due to the partial backscattering of C+ ions interacting with the heavy atoms of the silicon substrate. The results of this study provide insight into the minimum thickness of a-C films deposited by FCVA under optimum substrate bias conditions. Copyright © 2013 Materials Research Society.

  5. Fermi surface and quantum well states of V(110) films on W(110)

    International Nuclear Information System (INIS)

    Krupin, Oleg; Rotenberg, Eli; Kevan, S D

    2007-01-01

    Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface

  6. Fermi surface and quantum well states of V(110) films on W(110)

    Energy Technology Data Exchange (ETDEWEB)

    Krupin, Oleg [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Rotenberg, Eli [MS 6-2100, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Kevan, S D [Department of Physics, University of Oregon, Eugene, OR 97403 (United States)

    2007-09-05

    Using angle-resolved photoemission spectroscopy, we have measured the Fermi surface of V(110) films epitaxially grown on a W(110) substrate. We compare our results for thicker films to existing calculations and measurements for bulk vanadium and find generally very good agreement. For thinner films, we observe and analyse a diverse array of quantum well states that split and distort the Fermi surface segments. We have searched unsuccessfully for a thickness-induced topological transition associated with contact between the zone-centre jungle gym and zone-boundary hole ellipsoid Fermi surface segments. We also find no evidence for ferromagnetic splitting of any bands on this surface.

  7. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  8. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 μW at 1 g root mean square acceleration. We also...... characterize the harvester performance when only one of the PZT layers is used while the other is left open or short circuit....

  9. Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

    Science.gov (United States)

    Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

    2018-05-01

    We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

  10. On the Correlation of Specific Film Thickness and Gear Pitting Life

    Science.gov (United States)

    Krantz, Timothy L.

    2015-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness defined as the ratio of lubricant film thickness to the composite surface roughness. It can be difficult to combine results of studies to create a cohesive and comprehensive dataset. In this work gear surface fatigue lives for a wide range of specific film values were studied using tests done with common rigs, speeds, lubricant temperatures, and test procedures. This study includes previously reported data, results of an additional 50 tests, and detailed information from lab notes and tested gears. The dataset comprised 258 tests covering specific film values (0.47 to 5.2). The experimentally determined surface fatigue lives, quantified as 10-percent life estimates, ranged from 8.7 to 86.8 million cycles. The trend is one of increasing life for increasing specific film. The trend is nonlinear. The observed trends were found to be in good agreement with data and recommended practice for gears and bearings. The results obtained will perhaps allow for the specific film parameter to be used with more confidence and precision to assess gear surface fatigue for purpose of design, rating, and technology development.

  11. Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films

    Science.gov (United States)

    Balevičius, Saulius; Tornau, Evaldas E.; ŽurauskienÄ--, Nerija; Stankevič, Voitech; Šimkevičius, Česlovas; TolvaišienÄ--, Sonata; PlaušinaitienÄ--, Valentina; Abrutis, Adulfas

    2017-12-01

    We present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4-8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.

  12. Thickness effect on electric resistivity on polystyrene and carbon black- based composites

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez-Lopez, S; Vigueras-Santiago, E [Laboratorio de Investigacion y Desarrollo de Materiales Avanzados (LIDMA) Facultad de Quimica, Paseo Colon Esquina con Paseo Tollocan, s/n, CP 50000, Toluca (Mexico); Mayorga-Rojas, M; Reyes-Contreras, D, E-mail: eviguerass@uaemex.m [Facultad de Ciencias, Universidad Autonoma del Estado de Mexico. Av. Instituto Literario 100 Ote. C. P. 50000, Toluca (Mexico)

    2009-05-01

    Changes on electrical resistivity were experimentally studied for polystyrene and carbon black-based composites respect to the temperature. 22% w/w carbon black composite films at 30{mu}m, 2mm y 1cm thick were submitted to thermal heating-cooling cycles from room temperature to 100 deg. C, slightly up to T{sub g} of the composite. For each cycle changes on electrical resistivity constituent a hysteresis loop that depends on the sample thickness. The changes during the heating stage could be explained as a consequence of the thermal expansion and mobility of the polymer chains at T{sub g}, producing a disconnecting of the electrical contacts among carbon black particles and an important increasing (200%) of the electrical resistivity. For each cycle, the hysteresis loop was observed in thicker samples, whereas for 30 mu m thickness sample the hysteresis loop was lost after four cycles.

  13. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  14. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    International Nuclear Information System (INIS)

    Cao Yu; Li Xiangyou; Zeng Xiaoyan

    2008-01-01

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

  15. Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    R. Y. Borse

    2009-12-01

    Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

  16. Mechanical characterization of solution-derived nanoparticle silver ink thin films

    International Nuclear Information System (INIS)

    Greer, Julia R.; Street, Robert A.

    2007-01-01

    Mechanical properties of sintered silver nanoparticles are investigated via substrate curvature and nanoindentation methods. Substrate curvature measurements reveal that permanent microstructural changes occur during initial heating while subsequent annealing results in nearly elastic behavior of the thinner films. Thicker films were found to crack upon thermal treatment. The coefficient of thermal expansion was determined from linear slopes of curvature curves to be 1.9±0.097 ppm/ degree sign C, with elastic modulus and hardness determined via nanoindentation. Accounting for substrate effects, nanoindentation hardness and modulus remained constant for different film thicknesses and did not appear to be a function of annealing conditions. Hardness of 0.91 GPa and modulus of 110 GPa are somewhat lower than expected for a continuous nanocrystalline silver film, most likely due to porosity

  17. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  18. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  19. Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films

    Directory of Open Access Journals (Sweden)

    Lioutas Ch

    2007-01-01

    Full Text Available AbstractWe have studied ultrafast carrier dynamics in nanocrystalline silicon films with thickness of a few nanometers where boundary-related states and quantum confinement play an important role. Transient non-degenerated photoinduced absorption measurements have been employed to investigate the effects of grain boundaries and quantum confinement on the relaxation dynamics of photogenerated carriers. An observed long initial rise of the photoinduced absorption for the thicker films agrees well with the existence of boundary-related states acting as fast traps. With decreasing the thickness of material, the relaxation dynamics become faster since the density of boundary-related states increases. Furthermore, probing with longer wavelengths we are able to time-resolve optical paths with faster relaxations. This fact is strongly correlated with probing in different points of the first Brillouin zone of the band structure of these materials.

  20. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  1. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  2. Static magnetism and thermal switching in randomly oriented L10 FePt thin films

    Science.gov (United States)

    Lisfi, A.; Pokharel, S.; Alqarni, A.; Akioya, O.; Morgan, W.; Wuttig, M.

    2018-05-01

    Static magnetism and thermally activated magnetic relaxation were investigated in granular FePt films (20 nm-200 nm thick) with random magnetic anisotropy through hysteresis loop, torque curve and magnetization time dependence measurements. While the magnetism of thicker film (200 nm thick) is dominated by a single switching of the ordered L10 phase, thinner film (20 nm) displays a double switching, which is indicative of the presence of the disordered cubic phase. The pronounced behavior of double switching in thinner film suggests that the film grain boundary is composed of soft cubic magnetic phase. The magnetic relaxation study reveals that magnetic viscosity S of the films is strongly dependent on the external applied field and exhibits a maximum value (12 kAm) around the switching field and a vanishing behavior at low (1 kOe) and large (12 kOe) fields. The activation volume of the thermal switching was found to be much smaller than the physical volume of the granular structure due to the incoherent rotation mode of the magnetization reversal mechanism, which is established to be domain wall nucleation.

  3. Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

    Science.gov (United States)

    Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

    2018-02-01

    Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

  4. Thickness dependent electrical properties of CdO thin films prepared by spray pyrolysis method

    International Nuclear Information System (INIS)

    Murthy, L.C.S.; Rao, K.S.R.K.

    1999-01-01

    A large number of thin films of cadmium oxide have been prepared on glass substrates by spray pyrolysis method. The prepared films have uniform thickness varying from 200-600 nm and good adherence to the glass substrate. A systematic study has been made on the influence of thickness on resistivity, sheet resistance, carrier concentration and mobility of the films. The resistivity, sheet resistance, carrier concentration and mobility values varied from 1.56-5.72x10 -3 Ω-cm, 128-189 Ω/□, 1.6-3.9x10 21 cm -3 and 0.3-3 cm 2 /Vs, respectively for varying film thickness. A systematic increase in mobility with grain size clearly indicates the reduction of overall scattering of charge carriers at the grain boundaries. The large concentration of charge carriers and low mobility values have been attributed to the presence of Cd as an impurity in CdO microcrystallites. Using the optical transmission data, the band gap was estimated and found to vary from 2.20-2.42 eV. These films have transmittance around 77% and average reflectance is below 2.6% in the spectral range 350-850 nm. The films are n-type and polycrystalline in nature. SEM micrographs of the CdO films were taken and the films exhibit clear grains and grain boundary formation at a substrate temperature as low as 523 K. (author)

  5. Study of anisotropy, magnetization reversal and damping in ultrathin Co films on MgO (0 0 1) substrate

    Science.gov (United States)

    Mallik, Srijani; Bedanta, Subhankar

    2018-01-01

    Ultrathin Co films of 3 nm thickness have been prepared on MgO (0 0 1) substrate in presence or absence of substrate pre-annealing. Uniaxial anisotropy is induced in the samples due to the deposition under oblique angle of incidence. Along with the oblique deposition induced anisotropy, another uniaxial anisotropy contribution has been observed due to pre-annealing. However, no cubic anisotropy has been observed here as compared to the thicker films. Angle dependent ferromagnetic resonance (FMR) measurement confirms the presence of two anisotropies in the pre-annealed sample with ∼18° misalignment with each other. The two anisotropy constants were calculated from both superconducting quantum interference device (SQUID) magnetometry and FMR spectroscopy. The magnetization reversal is governed by nucleation dominated aftereffect followed by domain wall motion for the pre-annealed sample. Branched domains are observed for the sample prepared without pre-annealing which indicates grain disorientation of Co. However, in the thicker (25 nm) Co films ripple domains were observed in contrary to ultrathin (3 nm) films.

  6. Preparation and Study the Electrical, Structural and Gas Sensing Properties of ZnO Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    M. K. DEORE

    2010-08-01

    Full Text Available Thick films of AR grade ZnO were prepared on glass substrate by screen-printing technique. These films were dried and fired at different temperatures between 550 oC, 600 oC and 650 oC for one hour in air atmosphere. The gas sensing performance of thick films was tested for various gases. ZnO films showed larger response (sensitivity to H2S gas (100 ppm at 250 oC for firing temperature 650 oC. The Morphological, Compositional and Structural properties of the ZnO thick films were performed by Scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDX and XRD technique respectively. Chemical composition of ZnO film samples changes with firing temperature showing non-stoichiometric behaviours. XRD study indicated the formation of polycrystalline ZnO films with hexagonal wurtzite structure. The gas response (sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

  7. Effect of thickness on structure, microstructure, residual stress and soft magnetic properties of DC sputtered Fe65Co35 soft magnetic thin films

    International Nuclear Information System (INIS)

    Prasanna Kumari, T.; Manivel Raja, M.; Kumar, Atul; Srinath, S.; Kamat, S.V.

    2014-01-01

    The effect of film thickness on structure, microstructure, residual stress and soft magnetic properties of Fe 65 Co 35 thin films deposited on Si(001) and MgO(001) substrates was investigated by varying film thickness from 30 to 600 nm. X-ray diffraction studies showed that the FeCo films are polycrystalline in the as-deposited condition irrespective of deposition on Si or MgO substrate. The microstructure of films consisted of spherical grains for 30 nm film thickness and columnar grains for all other film thicknesses. The grain size for the films was found to increase from 15 to 50 nm with increasing film thickness. The sputtered films also exhibited tensile residual stresses with the magnitude of stress decreasing with increasing film thickness. The Fe 65 Co 35 films deposited on both substrates also exhibited very good in-plane soft magnetic properties with a saturation magnetization 4πM s of ∼23.6–23.8 kG and coercivity of ∼27–30 Oe without any under-layer only for films with thickness of 30 nm. For all other thicknesses, these films exhibited a significantly higher coercivity. The observed variations in soft magnetic properties with film thickness were explained in terms of residual stress and microstructure of the films. - Highlights: • Spherical grain morphology transformed to columnar above 30 nm film thickness. • Sputtered films exhibited tensile residual stresses decreasing with film thickness. • An in-plane coercivity of ∼27–30 Oe was achieved without any under-layer

  8. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Science.gov (United States)

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  9. The Effects of Film Thickness and Evaporation Rate on Si-Cu Thin Films for Lithium Ion Batteries.

    Science.gov (United States)

    Polat, B Deniz; Keles, Ozgul

    2015-12-01

    The reversible cyclability of Si based composite anodes is greatly improved by optimizing the atomic ratio of Si/Cu, the thickness and the evaporation rates of films fabricated by electron beam deposition method. The galvanostatic test results show that 500 nm thick flim, having 10%at. Cu-90%at. Si, deposited with a moderate evaporation rate (10 and 0.9 Å/s for Si and Cu respectively) delivers 2642.37 mAh g(-1) as the first discharge capacity with 76% Coulombic efficiency. 99% of its initial capacity is retained after 20 cycles. The electron conductive pathway and high mechanical tolerance induced by Cu atoms, the low electrical resistivity of the film due to Cu3Si particles, and the homogeneously distributed nano-sized/amorphous particles in the composite thin film could explain this outstanding electrochemical performance of the anode.

  10. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    Foerster, H.

    1983-01-01

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  11. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen

    2006-01-01

    of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine...

  12. Thickness dependent growth of low temperature atomic layer deposited zinc oxide films

    International Nuclear Information System (INIS)

    Montiel-González, Z.; Castelo-González, O.A.; Aguilar-Gama, M.T.; Ramírez-Morales, E.; Hu, H.

    2017-01-01

    Highlights: • Polycrystalline columnar ZnO thin films deposited by ALD at low temperatures. • Higher deposition temperature leads to a greater surface roughness in the ALD ZnO films. • Higher temperature originates larger refractive index values of the ALD ZnO films. • ZnO thin films were denser as the numbers of ALD deposition cycles were larger. • XPS analysis revels mayor extent of the DEZ reaction during the ALD process. - Abstract: Zinc oxide films are promising to improve the performance of electronic devices, including those based on organic materials. However, the dependence of the ZnO properties on the preparation conditions represents a challenge to obtain homogeneous thin films that satisfy specific applications. Here, we prepared ZnO films of a wide range of thicknesses by atomic layer deposition (ALD) at relatively low temperatures, 150 and 175 °C. From the results of X-ray photoelectron spectroscopy, X-ray diffraction and Spectroscopic Ellipsometry it is concluded that the polycrystalline structure of the wurtzite is the main phase of the ALD samples, with OH groups on their surface. Ellipsometry revealed that the temperature and the deposition cycles have a strong effect on the films roughness. Scanning electron micrographs evidenced such effect, through the large pyramids developed at the surface of the films. It is concluded that crystalline ZnO thin films within a broad range of thickness and roughness can be obtained for optic or optoelectronic applications.

  13. Properties of second phase (BaSnO3, Sn) added-YBCO thick films

    International Nuclear Information System (INIS)

    Ban, E.; Matsuoka, Y.

    1997-01-01

    The improvement of the critical current density J c of YBCO thick films has been attempted by adding BaSnO 3 powder and ultrafine Sn particles, whose diameter is about 2 μm and 7 x 10 -2 μm, respectively. It was found that the addition of a small amount of these particles was effective for the enhancement of J c of thick films prepared by a liquid-phase processing method. The 1 wt.% BaSnO 3 films fired at T s =1040-1060 C and the 3 wt.% Sn films (T s =1030-1060 C) showed J c values (77 K, 0 T) of about 2.1-2.4 x 10 3 Acm -2 and 3.1-3.5 x 10 3 Acm -2 , respectively, as compared to 2.0 x 10 3 Acm -2 for the undoped films. (orig.)

  14. Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

    International Nuclear Information System (INIS)

    Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

    1997-01-01

    The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

  15. The roentgenographic study on the thickness of the lamina dura in normal teeth

    Energy Technology Data Exchange (ETDEWEB)

    Park, Chang Sik; Ahn, Hyung Kyu [Department of Dental Radiology, College of Dentistry, Seoul National University, Seoul (Korea, Republic of)

    1976-11-15

    The study was performed to investigate the thickness of laminadura of the human teeth in normal condition, which obtained from the intraoral roentgenograms of the 1200 cases taken by bisecting technique. All films were divided into the different ages, the different sexes, and the different location of the different teeth. The obtained results were as follows: 1. With advancing age in both sexes, the laminadura tends to become thinner as following. Average thickness of the whole cases. 2. In general, the alveolar crest is thickest among the root surfaces, apex, midroot followed, and the average thickness of the posterior teeth is thicker than that of the anterior teeth. 3. The mean value of the whole maxillary teeth is larger than the one of the whole mandibular teeth. 4. On the whole cases, the differences of male and female is about 0.019 mm, which is not a significant differences.

  16. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  17. A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    Bennun, L.; Greaves, E.D.; Barros, H.; Diaz-Valdes, J.

    2009-01-01

    A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

  18. Nanostructured MgTiO{sub 3} thick films obtained by electrophoretic deposition from nanopowders prepared by solar PVD

    Energy Technology Data Exchange (ETDEWEB)

    Apostol, Irina [S.C. IPEE Amiral Trading Impex S.A., 115300 Curtea de Arges (Romania); Mahajan, Amit [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Monty, Claude J.A. [CNRS-PROMES Laboratory, 66120 Font Romeu Odeillo (France); Venkata Saravanan, K., E-mail: venketvs@cutn.ac.in [Department of Materials and Ceramics Engineering, Centre for Research in Ceramics and Composite Materials, CICECO, University of Aveiro, 3810-093 Aveiro (Portugal); Department of Physics, School of Basic and Applied Science, Central University of Tamil Nadu, Thiruvarur 61010 (India)

    2015-12-15

    Highlights: • Obtaining nano-crystalline magnesium titanium oxide powders by solar physical vapor deposition (SPVD) process. And using these nano-powders to obtain thick films on conducting substrates by electrophoretic deposition (EPD). • SPVD is a core innovative, original and environmentally friendly process to prepare nano-materials in a powder form. • Sintered thick films exhibited dielectric constant, ε{sub r} ∼18.3 and dielectric loss, tan δ ∼0.0012 at 1 MHz, which is comparable to the values reported earlier. • New contributions to the pool of information on the preparation of nano-structured MgTiO{sub 3} thick films at low temperatures. • A considerable decrease in synthesis temperature of pure MgTiO{sub 3} thick film was observed by the combination of SPVD and EPD. - Abstract: A novel combination of solar physical vapor deposition (SPVD) and electrophoretic deposition (EPD) that was developed to grow MgTiO{sub 3} nanostructured thick films is presented. Obtaining nanostructured MgTiO{sub 3} thick films, which can replace bulk ceramic components, a major trend in electronic industry, is the main objective of this work. The advantage of SPVD is direct synthesis of nanopowders, while EPD is simple, fast and inexpensive technique for preparing thick films. SPVD technique was developed at CNRS-PROMES Laboratory, Odeillo-Font Romeu, France, while the EPD was performed at University of Aveiro – DeMAC/CICECO, Portugal. The nanopowders with an average crystallite size of about 30 nm prepared by SPVD were dispersed in 50 ml of acetone in basic media with addition of triethanolamine. The obtained well-dispersed and stable suspensions were used for carrying out EPD on 25 μm thick platinum foils. After deposition, films with thickness of about 22–25 μm were sintered in air for 15 min at 800, 900 and 1000 °C. The structural and microstructural characterization of the sintered thick films was carried out using XRD and SEM, respectively. The

  19. Interaction domains in high-performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, T.G. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)], E-mail: t.woodcock@ifw-dresden.de; Khlopkov, K. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); Walther, A. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Dempsey, N.M.; Givord, D. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); Schultz, L.; Gutfleisch, O. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2009-05-15

    The magnetic domain structure in sputtered NdFeB thick films has been imaged by magnetic force microscopy. The local texture of the films was investigated by electron backscatter diffraction. The average misorientation of the grains was shown to decrease with increasing substrate temperature during deposition. Interaction domains were observed and are discussed with reference (i) to the sample grain size compared to the single domain particle size and (ii) to sample texture.

  20. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    International Nuclear Information System (INIS)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y.; Fourmentel, D.; Destouches, C.; Villard, J.F.

    2015-01-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m -2 .K -1 and 130 μC.N -1 for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to

  1. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    Energy Technology Data Exchange (ETDEWEB)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

    2015-07-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

  2. The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

    International Nuclear Information System (INIS)

    Rahal Achour; Benramache Said; Benhaoua Boubaker

    2013-01-01

    This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO 2 :F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO 2 :F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm) −1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO 2 :F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

  3. Effect of Ag film thickness on the optical and the electrical properties in CuAlO2/Ag/CuAlO2 multilayer films grown on glass substrates

    International Nuclear Information System (INIS)

    Oh, Dohyun; No, Young Soo; Kim, Su Youn; Cho, Woon Jo; Kwack, Kae Dal; Kim, Tae Whan

    2011-01-01

    Research highlights: The CuAlO 2 /Ag/CuAlO 2 multilayer films were grown on glass substrates using radio-frequency magnetron sputtering at room temperature. Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. The morphology Ag films with a thickness of 8 nm was uniform. The morphology of the Ag films inserted in the CuAlO 2 films significantly affected the optical transmittance and the resistivity of the CuAlO 2 films deposited on glass substrates. The maximum transmittance of the CuAlO 2 /Ag/CuAlO 2 multilayer films with a thickness of 8 nm was 89.16%. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films with an Ag film thickness of 18 nm was as small as about 2.8 x 10 -5 Ω cm. The resistivity of the CuAlO 2 /Ag/CuAlO 2 multilayer films was decreased as a result of the thermal annealing treatment. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as TCO films in solar cells. - Abstract: Effects of Ag film thickness on the optical and the electrical properties in CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates were investigated. Atomic force microscopy images showed that Ag films with a thickness of a few nanometers had island structures. X-ray diffraction patterns showed that the phase of the CuAlO 2 layer was amorphous. The resistivity of the 40 nm-CuAlO 2 /18 nm-Ag/40 nm-CuAlO 2 multilayer films was 2.8 x 10 -5 Ω cm, and the transmittance of the multilayer films with an Ag film thickness of 8 nm was approximately 89.16%. These results indicate that CuAlO 2 /Ag/CuAlO 2 multilayer films grown on glass substrates hold promise for potential applications as

  4. Frequency Invariability of (Pb,La)(Zr,Ti)O₃ Antiferroelectric Thick-Film Micro-Cantilevers.

    Science.gov (United States)

    An, Kun; Jin, Xuechen; Meng, Jiang; Li, Xiao; Ren, Yifeng

    2018-05-13

    Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O₃ (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

  5. Silicon surface passivation using thin HfO2 films by atomic layer deposition

    International Nuclear Information System (INIS)

    Gope, Jhuma; Vandana; Batra, Neha; Panigrahi, Jagannath; Singh, Rajbir; Maurya, K.K.; Srivastava, Ritu; Singh, P.K.

    2015-01-01

    Graphical abstract: - Highlights: • HfO 2 films using thermal ALD are studied for silicon surface passivation. • As-deposited thin film (∼8 nm) shows better passivation with surface recombination velocity (SRV) <100 cm/s. • Annealing improves passivation quality with SRV ∼20 cm/s for ∼8 nm film. - Abstract: Hafnium oxide (HfO 2 ) is a potential material for equivalent oxide thickness (EOT) scaling in microelectronics; however, its surface passivation properties particularly on silicon are not well explored. This paper reports investigation on passivation properties of thermally deposited thin HfO 2 films by atomic layer deposition system (ALD) on silicon surface. As-deposited pristine film (∼8 nm) shows better passivation with <100 cm/s surface recombination velocity (SRV) vis-à-vis thicker films. Further improvement in passivation quality is achieved with annealing at 400 °C for 10 min where the SRV reduces to ∼20 cm/s. Conductance measurements show that the interface defect density (D it ) increases with film thickness whereas its value decreases after annealing. XRR data corroborate with the observations made by FTIR and SRV data.

  6. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Rachel L. Wilson

    2018-03-01

    Full Text Available Analyte sensitivity for gas sensors based on semiconducting metal oxides should be highly dependent on the film thickness, particularly when that thickness is on the order of the Debye length. This thickness dependence has previously been demonstrated for SnO2 and inferred for TiO2. In this paper, TiO2 thin films have been prepared by Atomic Layer Deposition (ALD using titanium isopropoxide and water as precursors. The deposition process was performed on standard alumina gas sensor platforms and microscope slides (for analysis purposes, at a temperature of 200 °C. The TiO2 films were exposed to different concentrations of CO, CH4, NO2, NH3 and SO2 to evaluate their gas sensitivities. These experiments showed that the TiO2 film thickness played a dominant role within the conduction mechanism and the pattern of response for the electrical resistance towards CH4 and NH3 exposure indicated typical n-type semiconducting behavior. The effect of relative humidity on the gas sensitivity has also been demonstrated.

  7. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  8. Accuracy of Visual Estimation of LASIK Flap Thickness.

    Science.gov (United States)

    Brenner, Jason E; Fadlallah, Ali; Hatch, Kathryn M; Choi, Catherine; Sayegh, Rony R; Kouyoumjian, Paul; Wu, Simon; Frangieh, George T; Melki, Samir A

    2017-11-01

    To assess the accuracy of surgeons' visual estimation of LASIK flap thickness when created by a femtosecond laser by comparing it to ultrasound measurements. Surgeons were asked to visually estimate the thickness of a femtosecond flap during the procedure. Total corneal thickness was measured by ultrasound pachymetry prior to the procedure and the stromal bed was similarly measured after flap lifting. The estimates from three experienced surgeons (cornea fellowship trained and more than 5 years in practice) were compared to those of three cornea fellows, with each surgeon evaluating 20 eyes (120 total). Surgeons were not told the thickness of the flaps unless required for safety reasons. The average difference between visual and ultrasonic estimation of LASIK flap thickness was 15.20 μm. The flap was 10 μm thicker than estimated in 37% of eyes, 20 μm thicker in 17% of eyes, and 30 μm thicker in 10% of eyes. The largest deviation was 53 μm. There was no statistically significant difference between the accuracy of experienced surgeons and fellows (P = .51). There are significant differences between surgeons' visual estimates and ultrasonic measurements of LASIK flap thickness. Relying on these visual estimates may lead to deeper excimer laser ablation than intended. This could lead to thinner residual stromal beds and higher percent tissue altered than planned. The authors recommend that surgeons measure flaps intraoperatively to maximize accuracy and safety. [J Refract Surg. 2017;33(11):765-767.]. Copyright 2017, SLACK Incorporated.

  9. How Do Organic Vapors Swell Ultra-Thin PIM-1 Films?

    KAUST Repository

    Ogieglo, Wojciech

    2017-06-22

    Dynamic sorption of ethanol and toluene vapor into ultra-thin supported PIM-1 films down to 6 nm are studied with a combination of in-situ spectroscopic ellipsometry and in-situ X-ray reflectivity. Both ethanol and toluene significantly swell the PIM-1 matrix and, at the same time, induce persistent structural relaxations of the frozen-in glassy PIM-1 morphology. For ethanol below 20 nm three effects were identified. First, the swelling magnitude at high vapor pressures is reduced by about 30% as compared to thicker films. Second, at low penetrant activities (below 0.3 p/p0) films below 20 nm are able to absorb slightly more penetrant as compared with thicker films despite similar swelling magnitude. Third, for the ultra-thin films the onset of the dynamic penetrant-induced glass transition Pg has been found to shift to higher values indicating higher resistance to plasticization. All of these effects are consistent with a view where immobilization of the super-glassy PIM-1 at the substrate surface leads to an arrested, even more rigid and plasticization-resistant, yet still very open, microporous structure. PIM-1 in contact with the larger and more condensable toluene shows very complex, heterogeneous swelling dynamics and two distinct penetrant-induced relaxation phenomena, probably associated with the film outer surface and the bulk, are detected. Following the direction of the penetrant\\'s diffusion the surface seems to plasticize earlier than the bulk and the two relaxations remain well separated down to 6 nm film thickness, where they remarkably merge to form just a single relaxation.

  10. Thickness Dependent Optical Properties of Sol-gel based MgF2 – TiO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Siddarth Krishnaraja Achar

    2018-04-01

    Full Text Available MgF2 – TiO2 thin films were prepared by cost effective solgel technique onto glass substrates and optical parameters were determined by envelope technique. Thin films were characterized by optical transmission spectroscopy in the spectral range 290 – 1000 nm. The refractive index, extinction coefficient, Optical thickness and band gap dependency on thickness were evaluated. Thickness dependency of thin films showed direct allowed transition with band gap of 3.66 to 3.73 eV.

  11. Influence of multi-depositions on the final properties of thermally evaporated TlBr films

    International Nuclear Information System (INIS)

    Destefano, N.; Mulato, M.

    2010-01-01

    Thallium bromide is a promising candidate material for photodetectors in medical imaging systems. This work investigates the structural, optical and electrical properties of thermally evaporated TlBr films. The main fabrication parameter is the number of depositions. The use of sequential runs is aimed to increase the thickness of the films, as necessary, for technological applications. We deposited films using one-four runs, that led to maximum thickness of about 50 μm. Crystallographic and morphological changes were observed with varying deposition runs. Nevertheless, the optical gap and electrical resistivity in the dark remained constant at about 2.85 eV and 10 9 Ω cm, respectively. Thicker samples have a larger ratio of photo-to-dark signal under medical X-ray exposure, with a larger linear region as a function of applied voltage. The results are discussed aiming at future technological applications in medical imaging.

  12. The measurement of conductivity of copper indium disulphide thin films against temperature and thickness

    International Nuclear Information System (INIS)

    Yussof Wahab; Roslinda Zainal; Samsudi Sakrani

    1996-01-01

    Ternary semiconductor copper indium disulphide (CuInS sub 2) thin films have been prepared by thermal evaporation. Three stacked layers of film starting with copper, indium and finally sulphur was deposited on glass substrate in the thickness ratio of 1: 1: I0. The films were then annealed in carbon block by method known as encapsulated sulphurization at 350 degree C for 4 hours. The XRD analysis for four samples of thickness of 449.5, 586, 612 and 654 nm showed that stoichiometric CuInS sub 2, were formed at this annealing condition. The electrical conductivity of CuInS sub 2 thin films were measured against temperature from 150K to 300K. The conductivity values were between 76.6 Sm sup -1 to 631.26 Sm sup -1 and the result showed that it increase exponentially with temperature for the above temperature range. The resulting activation energies were found to be in the range 0.05 to 0.08 eV. This suggested that hopping mechanism predominant to the conducting process. It also found that the conductivity decreased with increasing film thickness

  13. Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

    2012-02-01

    The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

  14. Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Furuhashi, Hideo; Jinno, Makoto; Takashima, Osamu; Uchida, Yoshiyuki; Maeda, Akinori; Kojima, Kenzo; Ochiai, Shizuyasu; Ohashi, Asao

    1994-01-01

    The practical use of oxide high temperature superconductors for electronics field has been advanced. The oxide high temperature superconductor thin films is very sensitive to the production conditions, and their making with good reproducibility is difficult. In this study, the method of producing the thin films having good quality with good reproducibility by RF magnetron sputtering, and the relation of the film thickness with the superconductivity characteristics of YBaCuO system thin films in the different methods of substrate washing were examined. The sputtering conditions are shown. For the purpose of preventing the worsening of the film quality due to the reverse sputtering of oxygen negative ions to the thin film surface, sputtering gas pressure was set up high at 30 Pa. The film thickness and the temperature-resistance characteristics were measured. The experimental method and the experimental results are reported. By keeping the temperature on substrate surfaces constant, the reproducibility in the production of the thin films was improved remarkably. The effect of substrate washing was large. (K.I.)

  15. Influence of film thickness and Fe doping on LPG sensing properties of Mn3O4 thin film grown by SILAR method

    Science.gov (United States)

    Belkhedkar, M. R.; Ubale, A. U.

    2018-05-01

    Nanocrystalline Fe doped and undoped Mn3O4 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrates using MnCl2 and NaOH as cationic and anionic precursors. The grazing incidence X-ray diffraction (GIXRD) and field emission scanning electron microscopy (FESEM)) have been carried out to analyze structural and surface morphological properties of the films. The LPG sensing performance of Mn3O4thin films have been studied by varying temperature, concentration of LPG, thickness of the film and doping percentage of Fe. The LPG response of the Mn3O4thin films were found to be enhances with film thickness and decreases with increased Fe doping (0 to 8 wt. %) at 573 K temperature.

  16. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

  17. Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films

    International Nuclear Information System (INIS)

    Kande, Dhishan; Laughlin, David; Zhu Jiangang

    2010-01-01

    B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording (HAMR) media. Studies have shown that as we decrease the thickness of the FeRh films, the B2 phase is no longer AFM even below 350 K and there is a thickness dependant FM stabilization of the B2 phase. It was also proved that slightly Rh-richer compositions (>50 at. % Rh) were more preferable to stabilize the AFM phase. The current study focuses on growing highly ordered FeRh films by alternate layer rf sputtering of thin layers of iron and rhodium onto a heated substrate. It has been shown that films with rhodium content beyond 55 at. % contain a disordered bcc FM phase which gives rise to residual moment at room temperature even for thicker films.

  18. Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

    International Nuclear Information System (INIS)

    Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

    2017-01-01

    Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

  19. Quantum dot sensitized solar cells: Light harvesting versus charge recombination, a film thickness consideration

    Science.gov (United States)

    Wang, Xiu Wei; Wang, Ye Feng; Zeng, Jing Hui; Shi, Feng; Chen, Yu; Jiang, Jiaxing

    2017-08-01

    Sensitizer loading level is one of the key factors determined the performance of sensitized solar cells. In this work, we systemically studied the influence of photo-anode thicknesses on the performance of the quantum-dot sensitized solar cells. It is found that the photo-to-current conversion efficiency enhances with increased film thickness and peaks at around 20 μm. The optimal value is about twice as large as the dye counterparts. Here, we also uncover the underlying mechanism about the influence of film thickness over the photovoltaic performance of QDSSCs from the light harvesting and charge recombination viewpoint.

  20. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

    2010-01-01

    . In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

  1. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  2. Interaction domains in high performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  3. An Optoelectronic Sensor Configuration Using ZnO Thick Film for Detection of Methanol

    Directory of Open Access Journals (Sweden)

    Shobhna DIXIT

    2007-08-01

    Full Text Available In the present paper sensitivity of a nanocrystalline ZnO thick film to methanol vapors is reported. The sensing mechanism is the modulation in the intensity of light reflected from glass film interface. Modulation occurs due to the change in refractive index of ZnO film upon adsorption of vapor molecules. The film has been characterized by XRD, SEM, and optical transmission studies. XRD pattern reveals polycrystalline structure of the film with grain size 33.5 nm.

  4. Acoustic phonon dynamics in thin-films of the topological insulator Bi2Se3

    International Nuclear Information System (INIS)

    Glinka, Yuri D.; Babakiray, Sercan; Johnson, Trent A.; Holcomb, Mikel B.; Lederman, David

    2015-01-01

    Transient reflectivity traces measured for nanometer-sized films (6–40 nm) of the topological insulator Bi 2 Se 3 revealed GHz-range oscillations driven within the relaxation of hot carriers photoexcited with ultrashort (∼100 fs) laser pulses of 1.51 eV photon energy. These oscillations have been suggested to result from acoustic phonon dynamics, including coherent longitudinal acoustic phonons in the form of standing acoustic waves. An increase of oscillation frequency from ∼35 to ∼70 GHz with decreasing film thickness from 40 to 15 nm was attributed to the interplay between two different regimes employing traveling-acoustic-waves for films thicker than 40 nm and the film bulk acoustic wave resonator (FBAWR) modes for films thinner than 40 nm. The amplitude of oscillations decays rapidly for films below 15 nm thick when the indirect intersurface coupling in Bi 2 Se 3 films switches the FBAWR regime to that of the Lamb wave excitation. The frequency range of coherent longitudinal acoustic phonons is in good agreement with elastic properties of Bi 2 Se 3

  5. Controllable deposition of gadolinium doped ceria electrolyte films by magnetic-field-assisted electrostatic spray deposition

    International Nuclear Information System (INIS)

    Ksapabutr, Bussarin; Chalermkiti, Tanapol; Wongkasemjit, Sujitra; Panapoy, Manop

    2013-01-01

    This paper describes a simple and low-temperature approach to fabrication of dense and crack-free gadolinium doped ceria (GDC) thin films with controllable deposition by a magnetic-field-assisted electrostatic spray deposition technique. The influences of external permanent magnets on the deposition of GDC films were investigated. The coating area deposited using two magnets with the same pole arrangement decreased in comparison with the case of no magnets, whereas the largest deposition area was obtained in the system of the opposite poles. Analysis of as-deposited films at 450 °C indicated the formation of uniform, smooth and dense thin films with a single-phase fluorite structure. The films produced in the system using same poles were thicker, smaller in crystallite size and smoother than those fabricated under other conditions. Additionally, the GDC film deposited using the same pole arrangement showed the maximum in electrical conductivity of about 2.5 × 10 −2 S/cm at a low operating temperature of 500 °C. - Highlights: • Magnetic-field-assisted electrostatic spray allows a controllable coating. • Dense, crack-free thin films were obtained at low process temperature of 450 °C. • Control of deposition, thickness and uniformity is easy to achieve simultaneously. • Films from the same pole were thicker, smaller in crystal size and smoother. • The maximum conductivity of doped ceria film was 2.5 × 10 −2 S/cm at 500 °C

  6. Presentation and characterization of novel thick-film PZT microactuators

    Energy Technology Data Exchange (ETDEWEB)

    Chalvet, Vincent; Habineza, Didace, E-mail: didace.habineza@femto-st.fr; Rakotondrabe, Micky; Clévy, Cédric

    2016-04-01

    We propose in this paper the characterization of a new generation of piezoelectric cantilevers called thick-films piezoelectric actuators. Based on the bonding and thinning process of a bulk PZT layer onto a silicon layer, these cantilevers can provide better static and dynamic performances compared to traditional piezocantilevers, additionally to the small dimensions.

  7. Aggregation Strength Tuning in Difluorobenzoxadiazole-Based Polymeric Semiconductors for High-Performance Thick-Film Polymer Solar Cells.

    Science.gov (United States)

    Chen, Peng; Shi, Shengbin; Wang, Hang; Qiu, Fanglong; Wang, Yuxi; Tang, Yumin; Feng, Jian-Rui; Guo, Han; Cheng, Xing; Guo, Xugang

    2018-06-27

    High-performance polymer solar cells (PSCs) with thick active layers are essential for large-scale production. Polymer semiconductors exhibiting a temperature-dependent aggregation property offer great advantages toward this purpose. In this study, three difluorobenzoxadiazole (ffBX)-based donor polymers, PffBX-T, PffBX-TT, and PffBX-DTT, were synthesized, which contain thiophene (T), thieno[3,2- b]thiophene (TT), and dithieno[3,2- b:2',3'- d]thiophene (DTT) as the π-spacers, respectively. Temperature-dependent absorption spectra reveal that the aggregation strength increases in the order of PffBX-T, PffBX-TT, and PffBX-DTT as the π-spacer becomes larger. PffBX-TT with the intermediate aggregation strength enables well-controlled disorder-order transition in the casting process of blend film, thus leading to the best film morphology and the highest performance in PSCs. Thick-film PSCs with an average power conversion efficiency (PCE) of 8.91% and the maximum value of 9.10% are achieved using PffBX-TT:PC 71 BM active layer with a thickness of 250 nm. The neat film of PffBX-TT also shows a high hole mobility of 1.09 cm 2 V -1 s -1 in organic thin-film transistors. When PffBX-DTT and PffBX-T are incorporated into PSCs utilizing PC 71 BM acceptor, the average PCE decreases to 6.54 and 1.33%, respectively. The performance drop mainly comes from reduced short-circuit current, as a result of nonoptimal blend film morphology caused by a less well-controlled film formation process. A similar trend was also observed in nonfullerene type thick-film PSCs using IT-4F as the electron acceptor. These results show the significance of polymer aggregation strength tuning toward optimal bulk heterojunction film morphology using ffBX-based polymer model system. The study demonstrates that adjusting π-spacer is an effective method, in combination with other important approaches such as alkyl chain optimization, to generate high-performance thick-film PSCs which are critical for

  8. Equivalent-circuit model for the thickness-shear mode resonator with a viscoelastic film near film resonance.

    Science.gov (United States)

    Martin, S J; Bandey, H L; Cernosek, R W; Hillman, A R; Brown, M J

    2000-01-01

    We derive a lumped-element, equivalent-circuit model for the thickness-shear mode (TSM) resonator with a viscoelastic film. This modified Butterworth-Van Dyke model includes in the motional branch a series LCR resonator, representing the quartz resonance, and a parallel LCR resonator, representing the film resonance. This model is valid in the vicinity of film resonance, which occurs when the acoustic phase shift across the film is an odd multiple of pi/2 rad. For low-loss films, this model accurately predicts the frequency changes and damping that arise at resonance and is a reasonable approximation away from resonance. Elements of the parallel LCR resonator are explicitly related to film properties and can be interpreted in terms of elastic energy storage and viscous power dissipation. The model leads to a simple graphical interpretation of the coupling between the quartz and film resonances and facilitates understanding of the resulting responses. These responses are compared with predictions from the transmission-line and Sauerbrey models.

  9. Investigation of the effect of different carbon film thickness on the exhaust valve

    Science.gov (United States)

    Karamangil, M. I.; Avci, A.; Bilal, H.

    2008-03-01

    Valves working under different loads and temperatures are the mostly forced engine elements. In an internal combustion engine, pressures and temperatures affecting on the valves vary with fuel type and the combustion characteristics of the fuel. Consequently, valves are exposed to different dynamic and thermal stress. In this study, stress distributions and temperature profiles on exhaust valve are obtained depending on different carbon film thickness. It is concluded that heat losses and valve temperatures decrease and valve surfaces are exposed to less thermal shocks with increasing carbon film thickness.

  10. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    International Nuclear Information System (INIS)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A.

    2005-01-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E 1 ∼1.55 eV (fundamental gap) and E 2 ∼2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness ≥300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A. [Physics Department, Faculty of Science, Helwan University, Helwan, Cairo (Egypt)

    2005-08-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E{sub 1} {approx}1.55 eV (fundamental gap) and E{sub 2}{approx}2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness {>=}300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Fatigue crack closure in submicron-thick freestanding copper films

    International Nuclear Information System (INIS)

    Kondo, Toshiyuki; Ishii, Takaki; Hirakata, Hiroyuki; Minoshima, Kohji

    2015-01-01

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–K max (maximum stress intensity factor) region of K max <4.5 MPam 1/2 . The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor K op was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔK eff =K max −K op was then evaluated. The R-dependence of the da/dN vs. ΔK eff relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔK eff is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films

  13. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

    2015-06-01

    Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

  14. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  15. Effect of starch type on the physico-chemical properties of edible films.

    Science.gov (United States)

    Basiak, Ewelina; Lenart, Andrzej; Debeaufort, Frédéric

    2017-05-01

    Food preservation is mostly related to packaging in oil-based plastics, inducing environmental problems, but this drawback could be limited by using edible/biodegradable films and coatings. Physical and chemical properties were assessed and reflect the role of the starch type (wheat, corn or potato) and thus that of the amylose/amylopectin ratio, which influences thickness, colour, moisture, wettability, thermal, surface and mechanical properties. Higher amylose content in films induces higher moisture sensitivity, and thus affects the mechanical and barrier properties. Films made from potato starch constitute a greater barrier for oxygen and water vapour though they have weaker mechanical properties than wheat and corn starch films. Starch species with higher amylose content have lower wettability properties, and better mechanical resistance, which strongly depends on the water content due to the hydrophilic nature of starch films, so they could be used for products with higher water activity, such as cheese, fruits and vegetables. It especially concerns wheat starch systems, and the contact angle indicates less hydrophilic surfaces (above 90°) than those of corn and potato starch films (below 90°). The starch origin influences optical properties and thickness: with more amylose, films are opalescent and thicker; with less, they are transparent and thinner. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Estimating the thickness of hydrated ultrathin poly(o-phenylenediamine) film by atomic force microscopy

    International Nuclear Information System (INIS)

    Wu, C.-C.; Chang, H.-C.

    2004-01-01

    A novel method to measure ultrathin poly(o-phenylenediamine) (PPD) film electropolymerized on gold electrode in liquid was developed. It is based on the force versus distance curve (force curve) of atomic force microscopy (AFM). When 1-0.25 μm/s was chosen as the rising rate of the scanner, and 50% of the confidence interval (CI) as the qualifying threshold value, the thickness of the hydrated polymer film could be calculated. This result was compared with one obtained from an AFM image. A step-like electrode fabricated by a photolithographic process was used. The height difference of the electrode before and after the PPD coating was imaged in liquid, and then the real thickness, 19.6±5.2 nm, was obtained. The sample was also measured by estimating the transition range of the force curve of hydrated PPD film, and the thickness of the hydrated PPD film was determined to be 19.3±8.2 nm. However, the results calculated by integrating the electropolymerized charge for the oxidation process of o-phenylenediamine (o-PD) was only one-third as large as it was when using the two previously described methods. This indicated that the structure of hydrated PPD film might have been swollen

  17. New method of synthesis and physical properties of thick superconducting Er-123 films

    International Nuclear Information System (INIS)

    Muralidhar, M.; Sakai, N.; Machi, T.; Miyajiri, T.; Hirabayashi, I.; Tanaka, S.

    2008-01-01

    We have developed a low-cost, short time manufacturing process using a novel method, starting from a mixture of Er 2 BaO 4 , BaCuO 2 , and CuO, with an excess of Er at expense of Ba. Several micrometers thick films were prepared by the screen-printing technique, spreading the mixture paste on silver substrates, processed then in Ar-1% O 2 atmosphere. Using a double-step annealing process, we obtained good quality Er-123 thick films on silver substrates, with T c (onset) 92 K. Formation of large flat grains was observed by scanning electron microscope. According to XRD analysis, the films were preferentially c-axis oriented. The magnetic (induced), self-field J c measured at 77 K was above 32 kA/cm 2 . We observed a strong dependence of the transport current, I c , on the grain size. The maximum I c at 77 K as high as 10 A was observed in the sample with the average grain size around 40 μm. The present results indicate that our technology, enabling preparation of large-area superconducting thick films on Ag-based substrates in short processing times, is relatively cheap and appropriate for utilization in long-length RE-123 silver sheath wire production for commercial applications

  18. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India); Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India)], E-mail: rammehra2003@yahoo.com

    2008-12-30

    This paper reports deposition and characterization of Zn{sub 0.94}Co{sub 0.05}Al{sub 0.01}O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  19. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2008-01-01

    This paper reports deposition and characterization of Zn 0.94 Co 0.05 Al 0.01 O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  20. Characterization of Kerfless Linear Arrays Based on PZT Thick Film.

    Science.gov (United States)

    Zawada, Tomasz; Bierregaard, Louise Moller; Ringgaard, Erling; Xu, Ruichao; Guizzetti, Michele; Levassort, Franck; Certon, Dominique

    2017-09-01

    Multielement transducers enabling novel cost-effective fabrication of imaging arrays for medical applications have been presented earlier. Due to the favorable low lateral coupling of the screen-printed PZT, the elements can be defined by the top electrode pattern only, leading to a kerfless design with low crosstalk between the elements. The thick-film-based linear arrays have proved to be compatible with a commercial ultrasonic scanner and to support linear array beamforming as well as phased array beamforming. The main objective of the presented work is to investigate the performance of the devices at the transducer level by extensive measurements of the test structures. The arrays have been characterized by several different measurement techniques. First, electrical impedance measurements on several elements in air and liquid have been conducted in order to support material parameter identification using the Krimholtz-Leedom-Matthaei model. It has been found that electromechanical coupling is at the level of 35%. The arrays have also been characterized by a pulse-echo system. The measured sensitivity is around -60 dB, and the fractional bandwidth is close to 60%, while the center frequency is about 12 MHz over the whole array. Finally, laser interferometry measurements have been conducted indicating very good displacement level as well as pressure. The in-depth characterization of the array structure has given insight into the performance parameters for the array based on PZT thick film, and the obtained information will be used to optimize the key parameters for the next generation of cost-effective arrays based on piezoelectric thick film.

  1. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    TECS

    trations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity ... methanol, acetone, isopropanol and acetic acid, have been reported .... maximum sensitivity was obtained at an operating tem-.

  2. Polycrystalline Ba0.6Sr0.4TiO3 thin films on r-plane sapphire: Effect of film thickness on strain and dielectric properties

    Science.gov (United States)

    Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Akdogan, E. K.; Simon, W. K.; Safari, A.; Wang, J. Y.

    2006-10-01

    Polycrystalline Ba0.6Sr0.4TiO3 (BST) films grown on r-plane sapphire exhibit strong variation of in-plane strain over the thickness range of 25-400nm. At a critical thickness of ˜200nm, the films are strain relieved; in thinner films, the strain is tensile, while compressive strain was observed in the 400nm film. Microwave properties of the films were measured from 1to20GHz by the interdigital capacitor method. A capacitance tunability of 64% was observed in the 200nm film, while thinner films showed improved Q factor. These results demonstrate the possibility of incorporating frequency agile BST-based devices into the silicon on sapphire process.

  3. Effect of nano-silver hydrogel coating film on deep partial thickness scald model of rabbit.

    Science.gov (United States)

    Xi, Peng; Li, Yan; Ge, Xiaojin; Liu, Dandan; Miao, Mingsan

    2018-05-01

    Observing the effect of nano-silver hydrogel coating film on deep partial thickness scald model of rabbit. We prepared boiling water scalded rabbits with deep II degree scald models and applied high, medium and low doses of nano-silver hydrogel coating film for different time and area. Then we compared the difference of burned paper weight before administration and after administration model burns, burn local skin irritation points infection, skin crusting and scabs from the time, and the impact of local skin tissue morphology. Rabbits deep II degree burn model successful modeling; on day 12, 18, high, medium and low doses of nano-silver hydrogel coating film significantly reduced skin irritation of rabbits infected with the integral value ( P  film group significantly decreased skin irritation, infection integral value ( P  film significantly reduced film rabbits' scalded skin crusting time ( P  film on the deep partial thickness burns has a significant therapeutic effect; external use has a significant role in wound healing.

  4. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  5. Studies on Gas Sensing Performance of Pure and Surface Modified SrTiO3 Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    V. B. Gaikwad

    2009-08-01

    Full Text Available Strontium Titanate (SrTiO3 (ST was prepared mechanochemically from Sr(OH2 and TiO2. XRD confirms the Perovskite phase of material. Thick films of ST were prepared by screen-printing technique. The gas sensing performances of thick films were tested for various gases. It showed maximum sensitivity to CO gas at 350 oC for 100 ppm gas concentration. To improve the sensitivity and selectivity of the film towards a particular gas, ST thick films were surface modified by dipping them in a solution of nano copper for different intervals of time. These surface modified ST films showed larger sensitivity to H2S gas (100 ppm at 300 oC than pure ST film. A systematic study, of sensing performance of the sensor, indicates the key role-played by the nano copper species on the surface .The sensitivity, selectivity, response and recovery time of the sensor were measured and presented.

  6. Influence of thin film thickness of working electrodes on photovoltaic characteristics of dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Lai Yeong-Lin

    2017-01-01

    Full Text Available This paper presents the study of the influence of thin film thickness of working electrodes on the photovoltaic characteristics of dye-sensitized solar cells. Titanium dioxide (TiO2 thin films, with the thickness from 7.67 to 24.3 μm, were used to fabricate the working electrodes of dye-sensitized solar cells (DSSCs. A TiO2 film was coated on a fluorine-doped tin oxide (FTO conductive glass substrate and then sintered in a high-temperature furnace. On the other hand, platinum (Pt solution was coated onto an FTO substrate for the fabrication of the counter electrode of a DSSC. The working electrode immersed in a dye, the counter electrode, and the electrolyte were assembled to complete a sandwich-structure DSSC. The material analysis of the TiO2 films of DSSCs was carried out by scanning electron microscopy (SEM and ultraviolet-visible (UV-Vis spectroscopy, while the photovoltaic characteristics of DSSCs were measured by an AM-1.5 sunlight simulator. The light transmittance characteristics of the TiO2 working electrode depend on the TiO2 film thickness. The thin film thickness of the working electrode also affects the light absorption of a dye and results in the photovoltaic characteristics of the DSSC, including open-circuited voltage (VOC, short-circuited current density (JSC, fill factor, and photovoltaic conversion efficiency.

  7. Characterization of Films with Thickness Less than 10 nm by Sensitivity-Enhanced Atomic Force Acoustic Microscopy

    Directory of Open Access Journals (Sweden)

    Muraoka Mikio

    2011-01-01

    Full Text Available Abstract We present a method for characterizing ultrathin films using sensitivity-enhanced atomic force acoustic microscopy, where a concentrated-mass cantilever having a flat tip was used as a sensitive oscillator. Evaluation was aimed at 6-nm-thick and 10-nm-thick diamond-like carbon (DLC films deposited, using different methods, on a hard disk for the effective Young's modulus defined as E/(1 - ν2, where E is the Young's modulus, and ν is the Poisson's ratio. The resonant frequency of the cantilever was affected not only by the film's elasticity but also by the substrate even at an indentation depth of about 0.6 nm. The substrate effect was removed by employing a theoretical formula on the indentation of a layered half-space, together with a hard disk without DLC coating. The moduli of the 6-nm-thick and 10-nm-thick DLC films were 392 and 345 GPa, respectively. The error analysis showed the standard deviation less than 5% in the moduli.

  8. Thicker three-dimensional tissue from a "symbiotic recycling system" combining mammalian cells and algae.

    Science.gov (United States)

    Haraguchi, Yuji; Kagawa, Yuki; Sakaguchi, Katsuhisa; Matsuura, Katsuhisa; Shimizu, Tatsuya; Okano, Teruo

    2017-01-31

    In this paper, we report an in vitro co-culture system that combines mammalian cells and algae, Chlorococcum littorale, to create a three-dimensional (3-D) tissue. While the C2C12 mouse myoblasts and rat cardiac cells consumed oxygen actively, intense oxygen production was accounted for by the algae even in the co-culture system. Although cell metabolism within thicker cardiac cell-layered tissues showed anaerobic respiration, the introduction of innovative co-cultivation partially changed the metabolism to aerobic respiration. Moreover, the amount of glucose consumption and lactate production in the cardiac tissues and the amount of ammonia in the culture media decreased significantly when co-cultivated with algae. In the cardiac tissues devoid of algae, delamination was observed histologically, and the release of creatine kinase (CK) from the tissues showed severe cardiac cell damage. On the other hand, the layered cell tissues with algae were observed to be in a good histological condition, with less than one-fifth decline in CK release. The co-cultivation with algae improved the culture condition of the thicker tissues, resulting in the formation of 160 μm-thick cardiac tissues. Thus, the present study proposes the possibility of creating an in vitro "symbiotic recycling system" composed of mammalian cells and algae.

  9. Morphology and molecular orientation of ethyl-substituted dicyanovinyl-sexithiophene films for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Hinrichs, Karsten [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Department Berlin, Albert-Einstein-Strasse 9, 12489 Berlin (Germany); Levichkova, Marieta, E-mail: marieta.levichkova@heliatek.com [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Wynands, David [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Walzer, Karsten [Heliatek GmbH, Treidlerstrasse 3, 01139 Dresden (Germany); Eichhorn, Klaus J. [Leibniz-Institut fuer Polymerforschung Dresden e.V., Hohe Strasse 6, 01069 Dresden (Germany); Baeuerle, Peter [Institut fuer Organische Chemie II und Neue Materialien, Universitaet Ulm, 89081 Ulm (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

    2012-12-15

    Enhancement of the efficiency of organic solar cell devices requires knowledge about the structure of the organic layers involved. Films of the donor material dicyanovinyl-sexithiophene bearing four ethyl side-chains at thiophenes two and five DCV6T-Et(2,2,5,5) (DCV6T-Et) are prepared by thermal evaporation in high vacuum at various thicknesses and substrate temperatures. Infrared spectroscopic ellipsometry is used for determination of the molecular orientation in the thin films grown on room temperature (RT) substrate. From simulation of the IR ellipsometric data, the film thickness and the anisotropic optical constants of the DCV6T-Et films are determined. It is found that the optical constants strongly depend on the film thickness. Different average molecular orientations are determined for a few molecules thin (4 nm) and somewhat thicker (20 nm) films. Furthermore, the evolution of the surface morphology of films deposited at elevated substrate temperatures (80 Degree-Sign C, 100 Degree-Sign C) is studied in comparison to the thick RT-film. Atomic force microscopy images indicate that the growth on heated substrate is accompanied by an increase in grain size and surface roughness of the films. Simultaneously, the measured optical absorption spectra display structured and increased absorption in the red spectral region for the DCV6T-Et films deposited at higher substrate temperatures. The changes in surface topography and optical response relate to improved molecular arrangement induced by the substrate heating. To demonstrate the morphological influence on solar cell performance, we finally discuss DCV6T-Et/C60 planar heterojunction solar cells composed of DCV6T-Et films deposited at different substrate temperatures. - Highlights: Black-Right-Pointing-Pointer Room temperature (RT) and heated dicyanovinyl-sexithiophene (DCV6T) films Black-Right-Pointing-Pointer Different orientations determined by IR ellipsometry for thin and thick RT films Black

  10. Characterization of the flooding in vertical tubes by means of the film thickness measurement

    International Nuclear Information System (INIS)

    Malandrone, M.; Mioliggi, L.; Panella, B.; Scorta, G.

    1992-01-01

    The air-water countercurrent flow up to the flooding transition in a vertical tube has been experimentally investigated by liquid film thickness measurement performed by means of an electrical two-wires conductance probe. The liquid film mean thickness, the probability density function, the spectral power density and the power of the signal have been derived for a wide range of air and water flow rate, and related to the flow pattern with particular attention to the flooding phenomena. (6 figures) (Author)

  11. Growth of high Tc Bi-Sr-Ca-Cu-O thick films

    International Nuclear Information System (INIS)

    Chaudhry, Sangeeta; Khare, Neeraj; Gupta, A.K.; Nagpal, K.C.; Ojha, V.N.; Reddy, G.S.N.; Tomar, V.S.

    1991-01-01

    Thick films of Bi-Sr-Ca-Cu-O were deposited on (100) MgO substrates by screen-printing technique with the starting composition 1112. To attain the superconducting state, the films were subjected to two-step heat-treatment. R-T and XRD have been studied for films annealed at different durations of the second step. Initially T c (R=O) increased from 77 to 103 K as the annealing duration was increased after which T c decreased. Kinetics of the growth of high T c phase is discussed in the light of results. (author). 7 refs., 2 figs., 1 tab

  12. Effect of the thickness and hydrogen treatment on the properties of Ga-doped ZnO transparent conductive films

    International Nuclear Information System (INIS)

    Lee, Min-Jung; Lim, Jinhyong; Bang, Jungsik; Lee, Woong; Myoung, Jae-Min

    2008-01-01

    Combined effects of the thickness and hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide. In the as-deposited films, microstructural evolution initially improved the crystallinity up to the thickness of 160 nm accompanying enhanced electrical and optical properties, but further thickness increase resulted in the deterioration of these properties attributable to the development of ZnGa 2 O 4 and Ga 2 O 3 phases originating from the excessive amount of the Ga dopant. Post-annealing treatment of the GZO films in a hydrogen atmosphere improved the electrical and optical properties substantially through possible reduction of the oxide phases and passivation of the surfaces and grain boundaries. In this case, electrical and optical properties remained almost similar for the thickness above 160 nm indicating that there exists a certain optimal film thickness.

  13. Variation of the optical energy gap with {gamma}-radiation and thickness in Bi-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Al-Houty, L.; Kassem, M.E.; Abdel Kader, H.I. [Qatar Univ., Doha (Qatar). Dept. of Physics

    1995-02-01

    The effect of {gamma}-radiation and thickness on the optical energy gap of Bi-thin films has been investigated by measuring their optical absorbance. The measurements were carried out on thermally evaporated films having thicknesses in the range 5-20 nm. Different {gamma}-radiation doses were used ranging from 0-300 Mrad. The optical energy gap as well as the absorption coefficient were found to be {gamma}-dose dependent. (author).

  14. Variation of the optical energy gap with γ-radiation and thickness in Bi-thin films

    International Nuclear Information System (INIS)

    Al-Houty, L.; Kassem, M.E.; Abdel Kader, H.I.

    1995-01-01

    The effect of γ-radiation and thickness on the optical energy gap of Bi-thin films has been investigated by measuring their optical absorbance. The measurements were carried out on thermally evaporated films having thicknesses in the range 5-20 nm. Different γ-radiation doses were used ranging from 0-300 Mrad. The optical energy gap as well as the absorption coefficient were found to be γ-dose dependent. (author)

  15. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

  16. Numerical analysis for conductance probes, for the measurement of liquid film thickness in two-phase flow

    International Nuclear Information System (INIS)

    No, Hee Cheon; Mayinger, F.

    1995-01-01

    A three-dimensional numerical tool is developed to calculate the potential distribution, electric field, and conductance for any types of conductance probes immersed in the wavy liquid film with various shapes of its free surface. The tool is validated against various analytical solutions. It is applied to find out the characteristics of the wire-wire probe, the flush-wire probe and the flush-flush probe in terms of resolution, linearity, and sensitivity. The wire-wire probe shows high resolution and excellent linearity for various film thickness, but comparably low sensitivity for low film thickness fixed. The flush-wire probe shows good linearity and high sensitivity for varying film thickness, but resolution degrading with an increase in film thickness. In order to check the applicability of the three types of probes in the real situation, the Korteweg-de Vries(KdV) two-dimensional solitary wave is simulated. The wire-wire probe is strongly affected by the installation direction of the two wires; when the wires are installed perpendicularly to the flow direction, the wire-wire probe shows large distortion of the solitary wave. In order to measure the transverse profile of waves, the wire-wire probes and the flush-wire probes are required to be separately installed 2mm and 2mm, respectively

  17. Dynamic measurement of liquid film thickness in stratified flow by using ultrasonic echo technique

    International Nuclear Information System (INIS)

    Serizawa, A.; Nagane, K.; Kamei, T.; Kawara, Z.; Ebisu, T.; Torikoshi, K.

    2004-01-01

    We developed a technique to measure time-dependent local film thickness in stratified air-water flow over a horizontal plate by using a time of flight of ultrasonic transmission. The ultrasonic echoes reflected at the liquid/air interfaces are detected by a conventional ultrasonic instrumentation, and the signals are analyzed by a personal computer after being digitalized by an A/D converter to give the time of flight for the ultrasonic waves to run over a distance of twice of the film thickness. A 3.8 mm diameter probe type ultrasonic transducer was used in the present work which transmits and receives 10 MHz frequency ultrasonic waves. The estimated spatial resolution with this arrangement is 0.075 mm in film thickness for water. The time resolution, which depends on both the A/D converter and the memory capacity was up to several tens Hz. We also discussed the sensitivity of the method to the inclination angle of the interfaces. (author)

  18. Critical heat flux enhancement regarding to the thickness of graphene films under pool boiling

    International Nuclear Information System (INIS)

    Kim, Jin Man; Park, Hyun Sun; Park, Youngjae; Kim, Hyungdae; Kim, Dong Eok; Kim, Moo Hwan; Ahn, Ho Seon

    2014-01-01

    The large thermal conductivity of the graphene films inhibits the formation of hot spots, thereby increasing the CHF. An infrared high-speed visualization showed graphene effect on boiling characteristics during operation. The graphene-coated heater showed an increase in BHT and CHF. As the thickness of the graphene films increased, the CHF also increased up to an asymptotic limit when the graphene layer was approximately 150 nm thick. The increased BHT was explained by the slight decrease in the wettability and the folded edges of the RGO flakes, which led to a decrease in the diameter of the departing bubbles, a larger bubble generation frequency, and an increase in the areal density of the bubble nucleation sites. The increase in the CHF was explained by considering the thermal activity of the graphene films, and the dependence thereof on the thickness and thermal properties of the layer, which was calculated based on high-speed IR visualization data

  19. Effect of ZrO2 film thickness on the photoelectric properties of mixed-cation perovskite solar cells

    Science.gov (United States)

    Li, Yanyan; Zhao, Li; Wei, Shoubin; Xiao, Meng; Dong, Binghai; Wan, Li; Wang, Shimin

    2018-05-01

    In this work, perovskite solar cells (PSCs) were fabricated in the ambient air, with a scaffold layer composed of TiO2/ZrO2 double layer as the mesoscopic layer and carbon as the counter electrode. The effect of ZrO2 thin film thickness on the photovoltaic performances of PSCs was also studied in detail. Results showed that the photoelectric properties of as-prepared PSCs largely depend on the thin film thickness due to a series of factors, including surface roughness, charge transport resistance, and electron-hole recombination rate. The power conversion efficiency of PSCs increased from 8.37% to 11.33% by varying the thin film thickness from 75 nm to 305 nm, and the optimal power conversion efficiency was realized up to the 11.33% with a thin film thickness of 167 nm. This research demonstrates a promising route for the high-efficiency and low-cost photovoltaic technology.

  20. Electrochemical Impedance Spectroscopic Analysis of RuO2 Based Thick Film pH Sensors

    International Nuclear Information System (INIS)

    Manjakkal, Libu; Djurdjic, Elvira; Cvejin, Katarina; Kulawik, Jan; Zaraska, Krzysztof; Szwagierczak, Dorota

    2015-01-01

    The conductimetric interdigitated thick film pH sensors based on RuO 2 were fabricated and their electrochemical reactions with solutions of different pH values were studied by electrochemical impedance spectroscopy (EIS) technique. The microstructural properties and composition of the sensitive films were examined by scanning electron microscopy, X-ray energy dispersive spectroscopy and Raman spectroscopy. The EIS analysis of the sensor was carried out in the frequency range 10 mHz–2 MHz for pH values of test solutions 2–12. The electrical parameters of the sensor were found to vary with changing pH. The conductance and capacitance of the film were distinctly dependent on pH in the low frequency range. The Nyquist and Bode plots derived from the impedance data for the metal oxide thick film pH sensor provided information about the underlying electrochemical reactions

  1. Simultaneous determination of the residual stress, elastic modulus, density and thickness of ultrathin film utilizing vibrating doubly clamped micro-/nanobeams

    International Nuclear Information System (INIS)

    Stachiv, Ivo; Kuo, Chih-Yun; Fang, Te-Hua; Mortet, Vincent

    2016-01-01

    Measurement of ultrathin film thickness and its basic properties can be highly challenging and time consuming due to necessity of using several very sophisticated devices. Here, we report an easy accessible resonant based method capable to simultaneously determinate the residual stress, elastic modulus, density and thickness of ultrathin film coated on doubly clamped micro-/nanobeam. We show that a general dependency of the resonant frequencies on the axial load is also valid for in-plane vibrations, and the one depends only on the considered vibrational mode. As a result, we found that the film elastic modulus, density and thickness can be evaluated from two measured in-plane and out-plane fundamental resonant frequencies of micro-/nanobeam with and without film under different prestress forces. Whereas, the residual stress can be determined from two out-plane (in-plane) measured consecutive resonant frequencies of beam with film under different prestress forces without necessity of knowing film and substrate properties and dimensions. Moreover, we also reveal that the common uncertainties in force (and thickness) determination have a negligible (and minor) impact on the determined film properties. The application potential of the present method is illustrated on the beam made of silicon and SiO_2 with deposited 20 nm thick AlN and 40 nm thick Au thin films, respectively.

  2. Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture.

    Science.gov (United States)

    Bartsch, Heike; Baca, Martin; Fernekorn, Uta; Müller, Jens; Schober, Andreas; Witte, Hartmut

    2018-04-05

    Multi-electrode arrays find application in electrophysiological recordings. The quality of the captured signals depends on the interfacial contact between electrogenic cells and the electronic system. Therefore, it requires reliable low-impedance electrodes. Low-temperature cofired ceramic technology offers a suitable platform for rapid prototyping of biological reactors and can provide both stable fluid supply and integrated bio-hardware interfaces for recordings in electrogenic cell cultures. The 3D assembly of thick film gold electrodes in in vitro bio-reactors has been demonstrated for neuronal recordings. However, especially when dimensions become small, their performance varies strongly. This work investigates the influence of different coatings on thick film gold electrodes with regard to their influence on impedance behavior. PSS layer, titanium oxynitride and laminin coatings are deposited on LTCC gold electrodes using different 2D and 3D MEA chip designs. Their impedance characteristics are compared and discussed. Titanium oxynitride layers emerged as suitable functionalization. Small 86-µm-electrodes have a serial resistance R s of 32 kOhm and serial capacitance C s of 4.1 pF at 1 kHz. Thick film gold electrodes with such coatings are thus qualified for signal recording in 3-dimensional in vitro cell cultures.

  3. Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture

    Directory of Open Access Journals (Sweden)

    Heike Bartsch

    2018-04-01

    Full Text Available Multi-electrode arrays find application in electrophysiological recordings. The quality of the captured signals depends on the interfacial contact between electrogenic cells and the electronic system. Therefore, it requires reliable low-impedance electrodes. Low-temperature cofired ceramic technology offers a suitable platform for rapid prototyping of biological reactors and can provide both stable fluid supply and integrated bio-hardware interfaces for recordings in electrogenic cell cultures. The 3D assembly of thick film gold electrodes in in vitro bio-reactors has been demonstrated for neuronal recordings. However, especially when dimensions become small, their performance varies strongly. This work investigates the influence of different coatings on thick film gold electrodes with regard to their influence on impedance behavior. PEDOT:PSS layer, titanium oxynitride and laminin coatings are deposited on LTCC gold electrodes using different 2D and 3D MEA chip designs. Their impedance characteristics are compared and discussed. Titanium oxynitride layers emerged as suitable functionalization. Small 86-µm-electrodes have a serial resistance Rs of 32 kOhm and serial capacitance Cs of 4.1 pF at 1 kHz. Thick film gold electrodes with such coatings are thus qualified for signal recording in 3-dimensional in vitro cell cultures.

  4. Characterization of chemically deposited Ag/sub 2/S thin films

    International Nuclear Information System (INIS)

    Choudhury, M.G.M.; Rahman, M.M; Shahjahan, M.; Hossain, M.S.; Muhibbullah, M.; Uddin, M.A.; Banu, D.A.

    2001-01-01

    Silver Sulphide (Ag/sub 2/S) thin films were prepared by the chemical deposition method on glass substrates. Films of different thickness were deposited at room temperature. The films obtained were found to the uniform, pin-hole free and strongly adherent to the substrates. Films were characterized by X-$D, Hall effect, dc conductivity, thermoelectric power and optical measurements. X-RD revealed that as deposited films are amorphous with some microcrystalline structure. Hall effect measurement shows that the material deposited is n-type semiconductor with carrier concentration of the order of 10/sup 14/ cm/sup -3/. The dc dark conductivity shows two distinct conduction regions. The conductivity increases quite sharply above a transition temperature. Tt and below Tt the conductivity is weakly activated process with hopping via localized states. Above Tt the activation energy is quite high and the conduction may be due to impurity states to extended states. From the nature of variation of thermoelectric power with temperature it was found that in this material the position of Fermi level lie above the conduction band for thicker films and below the conduction band for relatively thinner films. The optical band gap of the films has been calculated from the transmittance spectra. The evaluated optical band gap E/sup opt/ was found to be about 1.1 eV and the value do not change much with film thickness. The refractive index, extinction coefficient and dielectric constants have also been evaluated from the transmission measurements. (author)

  5. Measurement of liquid film thickness by optical fluorescence and its application to an oscillating piston positive displacement flowmeter

    International Nuclear Information System (INIS)

    Morton, Charlotte E; Baker, Roger C; Hutchings, Ian M

    2011-01-01

    The movement of the circular piston in an oscillating piston positive displacement flowmeter is important in understanding the operation of the flowmeter, and the leakage of liquid past the piston plays a key role in the performance of the meter. The clearances between the piston and the chamber are small, typically less than 60 µm. In order to measure this film thickness a fluorescent dye was added to the water passing through the meter, which was illuminated with UV light. Visible light images were captured with a digital camera and analysed to give a measure of the film thickness with an uncertainty of less than 7%. It is known that this method lacks precision unless careful calibration is undertaken. Methods to achieve this are discussed in the paper. The grey level values for a range of film thicknesses were calibrated in situ with six dye concentrations to select the most appropriate one for the range of liquid film thickness. Data obtained for the oscillating piston flowmeter demonstrate the value of the fluorescence technique. The method is useful, inexpensive and straightforward and can be extended to other applications where measurement of liquid film thickness is required

  6. Direct laser interference patterning of poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) thin films

    International Nuclear Information System (INIS)

    Lasagni, Andres F.; Hendricks, Jeffrey L.; Shaw, Charles M.; Yuan, Dajun; Martin, David C.; Das, Suman

    2009-01-01

    We have developed a patterning procedure based on selective ablation using interference patterns with ns-laser pulses to fabricate periodic arrays on large areas of poly(3,4-ethylene dioxythiophene)-poly(4-styrene sulfonic acid) (PEDOT-PSS) thin films over a metallic gold-palladium layer. Single pulse laser-ablation experiments were performed to study the ablation characteristics of the thin films as a function of the film thickness. The ablation threshold fluence of the PEDOT-PSS films was found to be dependent on thickness with values ranging from 43 mJ/cm 2 to 252 mJ/cm 2 . Additionally, fluences at which the PEDOT-PSS films could be ablated without inducing damage in the underlying metallic films were observed (128 mJ/cm 2 and 402 mJ/cm 2 for film thicknesses of 70 nm and 825 nm, respectively). Linear periodic arrays with line spacings of 7.82 μm and 13.50 μm were also fabricated. The surface topography of these arrays was analyzed using scanning electron and atomic force microscopy. For thicker polymeric layers, several peeled sub-layers of the conjugated polymer with average thicknesses of about 165-185 nm were observed in the ablation experiments. The size and scale of structures produced by this technique could be suitable for several biomedical applications and devices in which controlling cell adhesion, promoting cell alignment, or improving biocompatibility are important.

  7. Determination of optical constant and dispersion parameters of Se{sub 75}Sb{sub 10}In{sub 15} thin film characterized by wide band gap

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elrahman, M.I.; Abu-Sehly, A.A.; El-sonbaty, Sherouk Sh.; Hafiz, M.M. [Assiut University, Physics Department, Faculty of Science, Assiut (Egypt)

    2017-02-15

    Chalcogenide Se{sub 75}Sb{sub 10}In{sub 15} thin films of different thickness (50-300 nm) are deposited using thermal evaporation technique. The thermogram of the chalcogenide bulk Se{sub 75}Sb{sub 10}In{sub 15} is obtained using a differential scanning calorimetry (DSC). The crystallization temperature T{sub c}, peak crystallization temperature T{sub p} and melting temperature T{sub m}, are identified. The X-ray diffraction (XRD) examination indicates the crystallinity of the as-deposited film decreases with increasing of thickness. Optical transmission and reflection spectra are recorded in the wavelength range of the incident photons from 250 to 2500 nm. It is found that the film thickness affects the absorption coefficient, refractive index, extinction coefficient and the width of the tails of localized states in the gap region. The absorption mechanism of the as-deposited films is a direct allowed transition. The optical band gap energy (E{sub g}) decreases from 3.31 to 2.51 eV with increasing the film thickness from 50 to 300 nm. The behavior of E{sub g} is explained on the basis of the structure disorders in the thicker films. The effect of the film thickness on the single-oscillator and dispersion energies is studied by the dispersion analyses of the refractive index. (orig.)

  8. Ab initio analytical model of light transmission through a cylindrical subwavelength hole in an optically thick film

    DEFF Research Database (Denmark)

    Bordo, Vladimir

    2011-01-01

    The rigorous analytical theory of light transmission through a cylindrical hole of arbitrary diameter in an optically thick film is developed. The approach is based on the introduction of fictitious surface currents at both hole openings and both film surfaces. The solution of Maxwell’s equations...... the film thickness considerably exceeds the hole diameter. It is emphasized that a specific pole corresponding to excitation of surface plasmon polaritons does not appear in the analysis. The theory is illustrated by the calculation of light transmission through a subwavelength hole in an Ag film....

  9. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    International Nuclear Information System (INIS)

    Luo, Zhenfei; Zhou, Xun; Yan, Dawei; Wang, Du; Li, Zeyu; Yang, Cunbang; Jiang, Yadong

    2014-01-01

    Nanocrystalline vanadium dioxide (VO 2 ) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO 2 thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T SMT ) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO 2 grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T SMT was found to decrease as average VO 2 grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO 2 film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure

  10. Preparation and characterization of thick BSCCO 2223 films

    International Nuclear Information System (INIS)

    Ciancio, G; Avila, A; Malachevsky, M.T; Ovidio, C.A

    2002-01-01

    Among the most widespread applications for critical high-temperature ceramic superconductors are for silver veined tapes, with the superconductor in the middle. These tapes are prepared by the powder- in - tube method. To attain high densities of critical current, the ceramic material must have a certain texture, with the grains oriented with the c axis perpendicular to the direction in which the current circulates. In the system that was studied, the degree of orientation increases as the distance to the vein decreases, with the maximum being in the silver-ceramic inter-phase. Superconductor tapes become inconvenient when defining the ceramic, especially because of the orientation of their plates as a function of the distance to the silver. Although the silver can be dissolved by a chemical attack in order to uncover the ceramic, greater precaution is needed while manipulating the superconductor and obtaining representative data. The behavior of thick films of the compound BSCCO 2223, deposited on silver sheets, forming silver-ceramic composites, was studied. These sheets simulate the silver-ceramic inter-phase and the distribution of the grains towards the center in a thick tape. After the samples were prepared, the phases that were present were characterized by x-ray diffraction and the resulting microstructure was analyzed with a SEM (Scanning Electron Microscope). Its mechanical properties were evaluated, following the formation and propagation of cracks in real time using four point flexion microassays inside the SEM chamber, as well as generating tension-deformation curves. The method of preparation of the thick films is discussed and its influence on the results obtained with the different characterizations (cw)

  11. Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Byoung-Soo; Sung, Shi-Joon; Hwang, Dae-Kue, E-mail: dkhwang@dgist.ac.kr

    2015-09-01

    Sub-micron thick Cu(In,Ga)Se{sub 2} (CIGS) thin films were deposited on Mo-coated soda-lime glass substrates under various conditions by single-stage co-evaporation. Generally, the short circuit current (J{sub sc}) decreased with the decreasing thickness of the absorber layer. However, in this study, J{sub sc} was nearly unchanged with decreasing thickness, while the open circuit voltage (V{sub oc}) and fill factor (FF) decreased by 31.9 and 31.1%, respectively. We believe that the remarkable change of V{sub oc} and FF can be attributed to the difference in the total amount of injected thermal energy. Using scanning electron microscopy, we confirmed that the surface morphology becomes smooth and the grain size increased after the annealing process. In the X-ray diffraction patterns, the CIGS thin film also showed an improved crystal quality. We observed that the electric properties were improved by the in-situ annealing of CIGS thin films. The reverse saturation current density of the annealed CIGS solar cell was 100 times smaller than that of reference solar cell. Thus, sub-micron CIGS thin films annealed under a constant Se rate showed a 64.7% improvement in efficiency. - Highlights: • The effects of in-situ annealing the sub-micron CIGS film have been investigated. • The surface morphology and the grain size were improved by in-situ annealing. • The V{sub oc} and FF of the films were increased by about 30% after in-situ annealing. • In-situ annealing of sub-micron thick CIGS films can be improved an efficiency.

  12. Realization of hexagonal barium ferrite thick films on Si substrates using a screen printing technique

    International Nuclear Information System (INIS)

    Chen Yajie; Smith, Ian; Geiler, Anton L; Vittoria, Carmine; Harris, Vincent G; Zagorodnii, Volodymyr; Celinski, Zbigniew

    2008-01-01

    Hexagonal barium ferrite thick films (50-200 μm) have been deposited on Si and Al 2 O 3 /Si substrates using a screen printing technique. X-ray diffractometry, scanning electron microscopy and magnetometry were used to characterize and correlate the ferrite films' microstructure and magnetic properties. The experiments indicated that an Al 2 O 3 underlayer was effective in preventing silicon diffusion into the barium ferrite films during a final sintering treatment at temperatures above 1100 deg. C. A two-stage sintering process allowed a reasonable tradeoff between mechanical and magnetic properties. This work reveals the feasibility of fabrication of thick ferrite films on large substrates (up to 25 mm in diameter) for future planar microwave devices compatible with semiconductor integrated circuits processing

  13. Microstructural Studies of Ni-P Thick Film Resistor Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Barbara Holodnik

    1986-01-01

    Full Text Available Thick Ni-P films have been widely investigated at our Institute. This article tends to visualize by use of various microscopic methods how the growth and sintering of individual conducting grains, results in the formation of nickel dendrites responsible for the metallic character of electrical conduction.

  14. The effect of film thickness and molecular structure on order and disorder in thin films of compositionally asymmetric block copolymers

    Science.gov (United States)

    Mishra, Vindhya

    Directed self-assembly of thin film block copolymers offer a high throughput-low cost route to produce next generation lithographic devices, if one can bring the defect densities in the self assembled patterns below tolerance limits. However, the ability to control the nanoscale structure or morphology in thin film block copolymers presents challenges due to confinement effects on equilibrium behavior. Using structure characterization techniques such as grazing incidence small angle X-ray scattering (GISAXS), transmission electron and atomic force microscopy as well as self-consistent field theory, we have investigated how film thickness, annealing temperature and block copolymer structure affects the equilibrium behavior of asymmetric block copolymer films. Our studies have revealed the complicated dependence of order-disorder transitions, order-order transitions and symmetry transitions on film thickness. We found that the thickness dependent transition in the packing symmetry of spherical morphology diblock copolymers can be suppressed by blending with a small amount of majority block homopolymer, which allowed us to resolve the driving force behind this transition. Defect densities in, and the order-disorder transition temperature of, thin films of graphoepitaxially aligned diblock copolymer cylinders showed surprising sensitivity to the microdomain spacing. Methods to mitigate defect formation in thin films have been identified. The challenge of quantification of structural order in these systems was overcome using GISAXS, which allowed us to study the phenomena of disordering in two and three dimensions. Through studies on block copolymers which exhibit an order-order transition in bulk, we found that that subtle differences in the packing frustration of the spherical and cylindrical phases as well as the higher configurational entropy of free chain ends at the surface can drive the equilibrium configuration in thin films away from the stable bulk structure

  15. Three-dimensional primate molar enamel thickness.

    Science.gov (United States)

    Olejniczak, Anthony J; Tafforeau, Paul; Feeney, Robin N M; Martin, Lawrence B

    2008-02-01

    Molar enamel thickness has played an important role in the taxonomic, phylogenetic, and dietary assessments of fossil primate teeth for nearly 90 years. Despite the frequency with which enamel thickness is discussed in paleoanthropological discourse, methods used to attain information about enamel thickness are destructive and record information from only a single plane of section. Such semidestructive planar methods limit sample sizes and ignore dimensional data that may be culled from the entire length of a tooth. In light of recently developed techniques to investigate enamel thickness in 3D and the frequent use of enamel thickness in dietary and phylogenetic interpretations of living and fossil primates, the study presented here aims to produce and make available to other researchers a database of 3D enamel thickness measurements of primate molars (n=182 molars). The 3D enamel thickness measurements reported here generally agree with 2D studies. Hominoids show a broad range of relative enamel thicknesses, and cercopithecoids have relatively thicker enamel than ceboids, which in turn have relatively thicker enamel than strepsirrhine primates, on average. Past studies performed using 2D sections appear to have accurately diagnosed the 3D relative enamel thickness condition in great apes and humans: Gorilla has the relatively thinnest enamel, Pan has relatively thinner enamel than Pongo, and Homo has the relatively thickest enamel. Although the data set presented here has some taxonomic gaps, it may serve as a useful reference for researchers investigating enamel thickness in fossil taxa and studies of primate gnathic biology.

  16. Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

    Science.gov (United States)

    Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

    2018-05-01

    Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

  17. Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

    Science.gov (United States)

    Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

    2017-07-01

    The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

  18. Thickness dependent properties of CMR Manganite thin films on lattice mismatched substrates: Distinguishing Strain and Interface Effects

    Science.gov (United States)

    Davidson, Anthony, III; Kolagani, Rajeswari; Bacharova, Ellisaveta; Yong, Grace; Smolyaninova, Vera; Schaefer, David; Mundle, Rajeh

    2007-03-01

    Epitaxial thin films of CMR manganite materials have been known to show thickness dependent electrical and magnetic properties on lattice mismatched substrates. Below a critical thickness, insulator-metal transition is suppressed. These effects have been largely attributed to the role of bi-axial lattice mismatch strain. Our recent results of epitaxial thin films of La0.67Ca0.33MnO3 (LCMO) on two substrates with varying degrees of compressive lattice mismatch indicate that, in addition to the effect of lattice mismatch strain, the thickness dependence of the properties are influenced by other factors possibly related to the nature of the film substrate interface and defects such as twin boundaries. We have compared the properties of LCMO films on (100) oriented LaAlO3 and (001) oriented NdCaAlO4 both of which induce compressive bi-axial strain. Interestingly, the suppression of the insulator-metal transition is less in films on NCAO which has a larger lattice mismatch. We will present results correlating the electrical and magneto transport properties with the structure and morphology of the films.

  19. Measurement of thickness of film deposited on the plasma-facing wall in the QUEST tokamak by colorimetry.

    Science.gov (United States)

    Wang, Z; Hanada, K; Yoshida, N; Shimoji, T; Miyamoto, M; Oya, Y; Zushi, H; Idei, H; Nakamura, K; Fujisawa, A; Nagashima, Y; Hasegawa, M; Kawasaki, S; Higashijima, A; Nakashima, H; Nagata, T; Kawaguchi, A; Fujiwara, T; Araki, K; Mitarai, O; Fukuyama, A; Takase, Y; Matsumoto, K

    2017-09-01

    After several experimental campaigns in the Kyushu University Experiment with Steady-state Spherical Tokamak (QUEST), the originally stainless steel plasma-facing wall (PFW) becomes completely covered with a deposited film composed of mixture materials, such as iron, chromium, carbon, and tungsten. In this work, an innovative colorimetry-based method was developed to measure the thickness of the deposited film on the actual QUEST wall. Because the optical constants of the deposited film on the PFW were position-dependent and the extinction coefficient k 1 was about 1.0-2.0, which made the probing light not penetrate through some thick deposited films, the colorimetry method developed can only provide a rough value range of thickness of the metal-containing film deposited on the actual PFW in QUEST. However, the use of colorimetry is of great benefit to large-area inspections and to radioactive materials in future fusion devices that will be strictly prohibited from being taken out of the limited area.

  20. Enhancement in (BHmax of PLD-made isotropic Nd-Fe-B thick film magnets deposited on Si substrates

    Directory of Open Access Journals (Sweden)

    M. Nakano

    2017-05-01

    Full Text Available Increase in Nd contents of a PLD-made isotropic Nd-Fe-B thick-film magnet enabled us to enhance the thickness of the film magnet deposited on a Si substrate because the linear expansion coefficient of Nd is an intermediate value between Nd2Fe14B and Si. The large amount of Nd, however, degraded the residual magnetic polarization and (BHmax. In the study, we reduced the Nd contents of each Nd-Fe-B film by inserting a Nd or a Nd-rich Nd-Fe-B buffer layer between a Nd-Fe-B film and a Si substrate in order to suppress the mechanical destruction together with the improvement in magnetic properties. It was found that the mechanical property of a Nd-Fe-B film comprising the Nd-Fe-B buffer layer in the thickness range from 10 to 60 μm was superior than that of a sample with the Nd buffer layer. Resultantly, an average (BHmax value of Nd-Fe-B films with each Nd-Fe-B buffer layer deposited on Si substrates could be enhanced by approximately 15 kJ/m3 compared to that of non-buffer-layered films.

  1. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  2. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  3. In-situ TEM study of domain switching in GaN thin films

    Science.gov (United States)

    Wang, Baoming; Wang, Tun; Haque, Aman; Snure, Michael; Heller, Eric; Glavin, Nicholas

    2017-09-01

    Microstructural response of gallium nitride (GaN) films, grown by metal-organic chemical vapor deposition, was studied as a function of applied electrical field. In-situ transmission electron microscopy showed sudden change in the electron diffraction pattern reflecting domain switching at around 20 V bias, applied perpendicular to the polarization direction. No such switching was observed for thicker films or for the field applied along the polarization direction. This anomalous behavior is explained by the nanoscale size effects on the piezoelectric coefficients of GaN, which can be 2-3 times larger than the bulk value. As a result, a large amount of internal energy can be imparted in 100 nm thick films to induce domain switching at relatively lower voltages to induce such events at the bulk scale.

  4. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  5. A direct current potential drop method for evaluating oxide film thickness formed in high-temperature water

    International Nuclear Information System (INIS)

    Anzai, Hideya; Ishibashi, Ryo; Saka, Masumi

    2016-01-01

    To establish an evaluation technique for oxide film thickness in-situ, the applicability of a four-point-probe direct current potential drop method is discussed in this study. Several samples of JIS SUS316L stainless steel with different oxide film thickness were prepared after immersing them in oxygenated pure water at 288°C for different periods. The oxide film thickness was measured by cross sectional observation using a transmission electron microscope. Potential drop on the oxide surface was measured every second during an acquisition period of about 20 s while a constant current was being injected into the sample simultaneously. This kind of measurement was repeatedly carried out at several arbitrary contact positions on the surface of the same sample. The measurement results showed that the potential drop slightly changed during the acquisition period and the tendency varied at the different contact positions. Multiple measurements at different contact positions revealed that the tendency could be categorized into two general types: the decreasing potential drop and the increasing potential drop, defined by the overall trend of the potential drop during the acquisition time. It was found that the ratio of contact positions with a decreasing potential drop tendency to all the contact positions of measurement tended to increase as applied current increased. This tendency depended on the oxide film thickness. The threshold value of applied current was found to correlate well with the oxide film thickness when the occurrence rate of decreasing potential drop ranged from 70 to 90% showing the best correlation at 70%. (author)

  6. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

  7. Thick epitaxial CdTe films grown by close space sublimation on Ge substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Q; Haliday, D P; Tanner, B K; Brinkman, A W [Department of Physics, University of Durham. Science Site, Durham, DH1 3LE (United Kingdom); Cantwell, B J; Mullins, J T; Basu, A [Durham Scientific Crystals Ltd., NetPark, Thomas Wright Way, Sedgefield, County Durham, TS21 3FD (United Kingdom)], E-mail: Q.Z.Jiang@durham.ac.uk

    2009-01-07

    This paper reports, for the first time, the successful growth of 200 {mu}m thick CdTe films on mis-oriented Ge(1 0 0) substrates by a cost-effective optimized close space sublimation method. It is found that, as the thickness increases to a few hundred micrometres, subgrains are formed probably as a result of the large density of dislocations and strain within the initial interfacial layers. The films are of high quality (x-ray rocking curve width {approx}100 arcsec) and high resistance ({approx}10{sup 9} {omega} cm), and are thus candidates for x-ray and {gamma}-ray detectors. (fast track communication)

  8. Thickness periodicity in the auger line shape from epitaxial (111)Cu films

    Energy Technology Data Exchange (ETDEWEB)

    Namba, Y; Vook, R W; Chao, S S

    1981-01-01

    The 61 eV MMM Cu Auger line doublet was recorded in the derivative mode as a function of thickness for epitaxial (111)Cu films approximately 1500 angstrom thick. The overlap of the doublet lines makes it possible to define a measure of the doublet profile called the ''R-factor'' as a ratio of the peak-to-peak heights of the small overlap oscillation to that of the major oscillation. To within the experimental error, it was found that the R-factor varies with a periodicity of approximately one monoatomic layer as the film thickens. Since these films grow by a layer growth mechaniism, the surface topography varies periodically with the number of monolayers deposited, going from a smooth to a rough to a smooth, etc. surface. It is believed that the occurrence of such a periodicity implies that there is a difference in the electronic structure at the surface of the flat areas of the film from that at the edges of monolayer high, flat islands. The amplitude of the oscillation in R is interpreted to be a measure of the relative amounts of edge area compared to flat area. These results show that it is possible to use Auger electron spectroscopy to monitor surface topography and the electronic structure changes that accompany the topographical changes occurring when epitaxial films grow by a layer growth mechanism.

  9. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    International Nuclear Information System (INIS)

    Wu Wei; Yu Qingkai; Pei, Shin-Shem; Peng Peng; Bao Jiming; Liu Zhihong

    2012-01-01

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

  10. Effects of thickness on the nanocrystalline structure and semiconductor-metal transition characteristics of vanadium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Zhenfei, E-mail: zhfluo8@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Zhou, Xun, E-mail: zx_zky@yahoo.com [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yan, Dawei [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Wang, Du; Li, Zeyu [Terahertz Research Center, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Yang, Cunbang [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang Sichuan 621900 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-01-01

    Nanocrystalline vanadium dioxide (VO{sub 2}) thin films were grown on glass substrates by using reactive direct current magnetron sputtering and in situ thermal treatments at low preparation temperatures (≤ 350 °C). The VO{sub 2} thin films were characterized by grazing-incidence X-ray diffraction, field emission scanning electron microscope, transmission electron microscopy and spectroscopic ellipsometry (SE). The semiconductor-metal transition (SMT) characteristics of the films were investigated by four-point probe resistivity measurements and infrared spectrometer equipped with heating pads. The testing results showed that the crystal structure, morphology, grain size and semiconductor-metal transition temperature (T{sub SMT}) significantly changed as the film thickness decreased. Multilayer structures were observed in the particles of thinner films whose average particle size is much larger than the film thickness and average VO{sub 2} grain size. A competition mechanism between the suppression effect of decreased thickness and coalescence of nanograins was proposed to understand the film growth and the formation of multilayer structure. The value of T{sub SMT} was found to decrease as average VO{sub 2} grain size became smaller, and SE results showed that small nanograin size significantly affected the electronic structure of VO{sub 2} film. - Highlights: • Nanocrystalline vanadium dioxide thin films were prepared. • Multilayer structures were observed in the films with large particles. • The transition temperature of the film is correlated with its electronic structure.

  11. Synthesis and Characterization of Nanostructured ZnO Thick Film Gas Sensors Prepared by Screen Printing Method

    Directory of Open Access Journals (Sweden)

    R. Y. BORSE

    2010-12-01

    Full Text Available Nanosized ZnO was prepared by self propagating solution combustion synthesis method. The synthesized ZnO thick films were deposited on alumina substrate by using standard screen printing technique and fired at 700 0C. The films were characterized by X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and energy dispersive analysis of X-ray (EDAX. The electrical behaviors of ZnO thick films were investigated. From XRD spectra it is revealed that ZnO films are polycrystalline in nature. The average grain size of 87.44 nm has been estimated for the film fired at 700 0C using Scherrer’s formula. EDAX clearly shows the peaks corresponding to Zn and O element which confirms the successful growth of ZnO films. Gas sensing study for these samples shows high sensitivity and selectivity towards NO2 at all operating temperatures. The resistivity, TCR and activation energy of the ZnO films have been evaluated and discussed.

  12. Effects of film thickness and preferred orientation on the dielectric properties of (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 films

    International Nuclear Information System (INIS)

    Cao, L Z; Fu, W Y; Wang, S F; Wang, Q; Sun, Z H; Yang, H; Cheng, B L; Wang, H; Zhou, Y L

    2007-01-01

    (Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 (BZN) films with different thicknesses and preferred orientations have been fabricated on Nb doped SrTiO 3 substrates by pulsed laser deposition. As the thickness increases, the permittivity increases, and the dielectric loss decreases, while the tunability only has a little variation. The asymmetric behaviour of the electric field dependent permittivity reduces gradually with the increasing thickness, which should be attributed to the decrease in the effect of the interfacial layer between the dielectric film and substrate (electrode). Furthermore, compared with the (1 0 0) oriented BZN film, BZN film with (1 1 1) preferred orientation exhibits high dielectric loss

  13. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  14. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    International Nuclear Information System (INIS)

    Johnson, Jay; Harris, Tequila

    2010-01-01

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 μm measurements can be recorded with less than ±5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  15. A search for strain gradients in gold thin films on substrates using x-ray diffraction

    International Nuclear Information System (INIS)

    Leung, O. S.; Munkholm, A.; Brennan, S.; Nix, W. D.

    2000-01-01

    The high strengths of gold thin films on silicon substrates have been studied with particular reference to the possible effect of strain gradients. Wafer curvature/thermal cycling measurements have been used to study the strengths of unpassivated, oxide-free gold films ranging in thickness from 0.1 to 2.5 μm. Films thinner than about 1 μm in thickness appear to be weakened by diffusional relaxation effects near the free surface and are not good candidates for the study of strain gradient plasticity. Our search for plastically induced strain gradients was thus limited to thicker films with correspondingly larger grain sizes. Three related x-ray diffraction techniques have been used to investigate the elastic strains in these films. The standard d hkl vs sin2 Ψ technique has been used to find the average strain through the thickness of the films. The results are consistent with wafer curvature measurements. We have also measured a number of d hkl 's as a function of penetration depth to construct depth-dependent d hkl vs sin2 Ψ plots. These data show that the residual elastic strain is essentially independent of depth in the film. Finally, a new technique for sample rotation has been used to measure the d hkl 's for a fixed set of grains in the film as a function of penetration depth. Again, no detectable gradient in strain has been observed. These results show that the high strengths of unpassivated gold films relative to the strength of bulk gold cannot be rationalized on the basis of strain gradients through the film thickness. However, a sharp gradient in strain close to the film substrate interface cannot be ruled out. (c) 2000 American Institute of Physics

  16. Critical current densities in thick yttrium-barium cuprate (1-2-3) films

    International Nuclear Information System (INIS)

    Ryvkina, G.G.; Gorlanov, S.F.; Vedernikov, G.E.; Telegin, A.B.; Ryabin, V.A.; Khodos, M.Ya.

    1993-01-01

    The study of critical current densities j c of oxide superconductors and their thick films is a very important practical task because the value of j c is one of the main criteria for their utilization in modern cryoelectronics. For most devices based on the Josephson effect, the value of j c ∼ 10 2 - 10 3 A/cm 2 is acceptable, which is easily attainable for polycrystalline thick films obtained by stenciling. The study of the current-transport phenomenon involves a number of difficulties, especially for direct current, because both the sample itself and the lead-in contacts are resistance-heated during the measurements, which, in turn, results in lower values of the j c . Measurements with pulsed currents allow one to lower the power that is applied to the sample; the heat that is released in the sample is reduced, in comparison to measurements with direct current, by a factor of the pulsed-current duty cycle. In addition, measurements with direct current detects only the appearance of resistance; it provides no information on the rest of the transition from the normal to the superconductive state, i.e., on the so-called 'tail' of the transition. In this work, the authors studied critical current densities of thick HTSC yttrium-barium cuprate films of the 1-2-3 composition using pulsed current

  17. Thicker three-dimensional tissue from a “symbiotic recycling system” combining mammalian cells and algae

    Science.gov (United States)

    Haraguchi, Yuji; Kagawa, Yuki; Sakaguchi, Katsuhisa; Matsuura, Katsuhisa; Shimizu, Tatsuya; Okano, Teruo

    2017-01-01

    In this paper, we report an in vitro co-culture system that combines mammalian cells and algae, Chlorococcum littorale, to create a three-dimensional (3-D) tissue. While the C2C12 mouse myoblasts and rat cardiac cells consumed oxygen actively, intense oxygen production was accounted for by the algae even in the co-culture system. Although cell metabolism within thicker cardiac cell-layered tissues showed anaerobic respiration, the introduction of innovative co-cultivation partially changed the metabolism to aerobic respiration. Moreover, the amount of glucose consumption and lactate production in the cardiac tissues and the amount of ammonia in the culture media decreased significantly when co-cultivated with algae. In the cardiac tissues devoid of algae, delamination was observed histologically, and the release of creatine kinase (CK) from the tissues showed severe cardiac cell damage. On the other hand, the layered cell tissues with algae were observed to be in a good histological condition, with less than one-fifth decline in CK release. The co-cultivation with algae improved the culture condition of the thicker tissues, resulting in the formation of 160 μm-thick cardiac tissues. Thus, the present study proposes the possibility of creating an in vitro “symbiotic recycling system” composed of mammalian cells and algae. PMID:28139713

  18. In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Mann, Jonathan R.; Noufi, Rommel

    2012-01-01

    A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

  19. Unraveling the Dynamics of Nanoscopically Confined PVME in Thin Films of a Miscible PVME/PS Blend.

    Science.gov (United States)

    Madkour, Sherif; Szymoniak, Paulina; Radnik, Jörg; Schönhals, Andreas

    2017-10-25

    Broadband dielectric spectroscopy (BDS) was employed to investigate the glassy dynamics of thin films (7-200 nm) of a poly(vinyl methyl ether) (PVME)/polystyrene (PS) blend (50:50 wt %). For BDS measurements, nanostructured capacitors (NSCs) were employed, where films are allowed a free surface. This method was applied for film thicknesses up to 36 nm. For thicker films, samples were prepared between crossed electrode capacitors (CECs). The relaxation spectra of the films showed multiple processes. The first process was assigned to the α-relaxation of a bulklike layer. For films measured by NSCs, the rates of α-relaxation were higher compared to those of the bulk blend. This behavior was related to the PVME-rich free surface layer at the polymer/air interface. The second process was observed for all films measured by CECs (process X) and the 36 nm film measured by NSCs (process X2). This process was assigned to fluctuations of constraint PVME segments by PS. Its activation energy was found to be thickness-dependent because of the evidenced thickness dependency of the compositional heterogeneity. Finally, a third process with an activated temperature dependence was observed for all films measured by NSCs (process X1). It resembled the molecular fluctuations in an adsorbed layer found for thin films of pure PVME, and thus, it is assigned accordingly. This process undergoes an extra confinement because of frozen adsorbed PS segments at the polymer/substrate interface. To our knowledge, this is the first example where confinement-induced changes were observed by BDS for blend thin films.

  20. Experimental investigation into the effect of substrate clamping on the piezoelectric behaviour of thick-film PZT elements

    Energy Technology Data Exchange (ETDEWEB)

    Torah, R N; Beeby, S P; White, N M [Department of Electronics and Computer Science, University of Southampton, SO17 1BJ (United Kingdom)

    2004-04-07

    This paper details an experimental investigation of the clamping effect associated with thick-film piezoelectric elements printed on a substrate. The clamping effect reduces the measured piezoelectric coefficient, d{sub 33}, of the film. This reduction is due to the influence of the d{sub 31} component in the film when a deformation of the structure occurs, by either the direct or indirect piezoelectric effect. Theoretical analysis shows a reduction in the measured d{sub 33} of 62%, i.e. a standard bulk lead zirconate titanate (PZT)-5H sample with a manufacturer specified d{sub 33} of 593pC/N would fall to 227.8pC/N. To confirm this effect, the d{sub 33} coefficients of five thin bulk PZT-5H samples of 220 {mu}m thickness were measured before and after their attachment to a metallized 96% alumina substrate. The experimental results show a reduction in d{sub 33} of 74% from 529pC/N to 139pC/N. The theoretical analysis was then applied to existing University of Southampton thick-film devices. It is estimated that the measured d{sub 33} value of 131pC/N of the thick-film devices is the equivalent of an unconstrained d{sub 33} of 345pC/N.

  1. Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

    Science.gov (United States)

    Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

    2016-02-08

    This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

  2. Improvement of a wall thinning rate model for liquid droplet impingement erosion. Implementation of liquid film thickness model with consideration of film behavior

    International Nuclear Information System (INIS)

    Morita, Ryo

    2014-01-01

    Liquid droplet impingement erosion (LDI) is defined as an erosion phenomenon caused by high-speed droplet attack in a steam flow. Pipe wall thinning by LDI is sometimes observed in a steam piping system of a power plant. As LDI usually occurs very locally and is difficult to detect, predicting LDI location is required for safe operation of power plant systems. Therefore, we have involved in the research program to develop prediction tools that will be used easily in actual power plants. Our previous researches developed a thinning rate evaluation model due to LDI (LDI model) and the evaluation system of the thinning rate and the thinning shape within a practically acceptable time (LDI evaluation system). Though the LDI model can include a cushioning effect of liquid film which is generated on the material surface by droplet impingement as an empirical equation with fluid parameter, the liquid film thickness is not clarified due to complex flow condition. In this study, to improve the LDI model and the LDI evaluation system, an analytical model of the liquid film thickness was proposed with consideration of the liquid film flow behavior on the material surface. The mass balance of the liquid film was considered, and the results of CFD calculations and existing researches were applied to obtain the liquid film thickness in this model. As a result of the LDI evaluation of the new LDI model with liquid film model, improvement of the LDI model was achieved. (author)

  3. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    International Nuclear Information System (INIS)

    Munoz, Raul C; HenrIquez, Ricardo; GarcIa, Juan Pablo; Moncada, Ana MarIa; Espinosa, Andres; Robles, Marcelo; Kremer, German; Moraga, Luis; Cancino, Simon; Morales, Jose Roberto; RamIrez, Adan; Oyarzun, Simon; Suarez, Marco Antonio; Chen, David; Zumelzu, Ernesto; Lizama, Claudio

    2006-01-01

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  4. Hydroxynaphthoquinone ultrathin films obtained by diazonium electroreduction: toward design of biosensitive electroactive interfaces.

    Science.gov (United States)

    March, Gregory; Reisberg, Steeve; Piro, Benoit; Pham, Minh-Chau; Fave, Claire; Noel, Vincent

    2010-05-01

    Electroactive 2-(phenylsulfanyl)-8-hydroxy-1,4-naphthoquinone has been electrodeposited via the reduction of the corresponding diazonium salt on Au electrodes. Surface characterizations by X-ray photoelectron spectroscopy (XPS) and infrared reflection-absorption spectroscopy (IRRAS) reveal that the mechanism of film deposition follows an aryl radical formation and its immobilization on the electrode surface. Electrochemical study shows that the surface coverage can be finely tuned (thickness between one and four layers) by adjusting the potential and the deposition time. By managing the potential applied when reducing diazonium in potentiostatic mode, the formed layer could mediate or not charge transfer. This is the first time that the films obtained by diazonium process are demonstrated to act as mediators in the growth process. Hence, with potentials higher than the formal potential of quinone group, very thin and homogeneous layers are obtained, whereas thicker films are formed when more cathodic potentials than that of quinone are applied. The possibility to manage the charge-transfer kinetics, the thickness, and the homogeneity of electroactive deposits is interesting in the scope of designing electrochemical transducers.

  5. Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

  6. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    Energy Technology Data Exchange (ETDEWEB)

    Santi, L. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Bohn, F. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Viegas, A.D.C. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Durin, G. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Magni, A. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Bonin, R. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Zapperi, S. [Istituto dei Sistemi Complessi-CNR, Roma (Italy); Sommer, R.L. [Centro Brasileiro de Pesquisas Fisicas, 22290-180, Rio de Janeiro, RJ (Brazil)]. E-mail: sommer@cbpf.br

    2006-10-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 22.5-x}B{sub x} (with x=4 and 9) in the thickness range 20nm-5{mu}m. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents {tau}=1.25+/-0.05 and {alpha}=1.60+/-0.05, respectively.

  7. Magnetization and flux creep in thin YBa2Cu3O7-δ films of various thickness

    International Nuclear Information System (INIS)

    Sheriff, E.; Prozorov, R.; Yeshurun, Y.; Shaulov, A.; Koren, G.; Chabaud-Villard, C.

    1997-01-01

    We report on the thickness dependence of the irreversible magnetization in superconducting Y 1 Ba 2 Cu 3 O 7-δ films of thickness 350 endash 3000 Angstrom. Our results reveal a nonmonotonous dependence of the persistent current density j on the film thickness, which is interpreted in terms of surface pinning and variations in the surface microstructure. Measurements of the time dependence of j show that under certain conditions relaxation curves of samples of different thickness cross each other, i.e., the sample with initially larger j exhibits after some time a lower j. The crossing point is shifted to shorter times as the temperature is increased. We propose a simple explanation to this effect and discuss its practical implications. Low dose heavy ion irradiation of the films has a modest effect on j and on the rate of its relaxation. copyright 1997 American Institute of Physics

  8. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    International Nuclear Information System (INIS)

    Biegalski, M. D.; Trolier-McKinstry, S.; Schlom, D. G.; Fong, D. D.; Eastman, J. A.; Fuoss, P. H.; Streiffer, S. K.; Heeg, T.; Schubert, J.; Tian, W.; Nelson, C. T.; Pan, X. Q.; Hawley, M. E.; Bernhagen, M.; Reiche, P.; Uecker, R.

    2008-01-01

    Strained epitaxial SrTiO 3 films were grown on orthorhombic (101) DyScO 3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 A were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 A. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 deg.). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 deg. C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO 3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films

  9. THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

    Energy Technology Data Exchange (ETDEWEB)

    Brinkman, K

    2009-01-08

    Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

  10. Neutron methods for the direct determination of the magnetic induction in thick films

    Energy Technology Data Exchange (ETDEWEB)

    Kozhevnikov, S.V., E-mail: kozhevn@nf.jinr.ru [Frank Laboratory of Neutron Physics, Joint Institute for Nuclear Research, 141980 Dubna (Russian Federation); Ott, F. [CEA, IRAMIS, Laboratoire Léon Brillouin, F-91191 Gif sur Yvette (France); CNRS, IRAMIS, Laboratoire Léon Brillouin, F-91191 Gif sur Yvette (France); Radu, F. [Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Strasse 15, D-12489 Berlin (Germany)

    2016-03-15

    We review different neutron methods which allow extracting directly the value of the magnetic induction in thick films: Larmor precession, Zeeman spatial beam-splitting and neutron spin resonance. Resulting parameters obtained by the neutron methods and standard magnetometry technique are presented and compared. The possibilities and specificities of the neutron methods are discussed. - Highlights: • We present neutron methods for investigations of the thick magnetic films. • It is the methods for the direct determination of the magnetic induction. • Magnetic induction in bulk, at single interface and in a single domain. • It is Larmor precession, Zeeman spatial beam-splitting and neutron spin resonance. • These methods are complementary to polarized neutron reflectometry.

  11. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  12. Study on Gas Sensing Performance of In2O3 Thick Film Resistors Prepared by Screen Printing Technique

    Directory of Open Access Journals (Sweden)

    S. C. KULKARNI

    2011-02-01

    Full Text Available Indium Oxide (In2O3 thick films were prepared on alumina substrate by using standard screen printing technique. These films were dried and fired at temperatures between 750 0C to 950 0C for two hours in air atmosphere. The compositional, morphological and structural properties of In2O3 films were performed by Energy Dispersive Spectroscopy (EDX, XRD, and Scanning electron Microscopy respectively. We explore the various gases to study sensing performance of In2O3 thick films. The maximum response was reported to film fired at 750 0C for H2S gas at 150 0C operating temperature.

  13. Characterization of a glass frit free TiCuAg-thick film metallization applied on aluminium nitride

    International Nuclear Information System (INIS)

    Reicher, R.; Smetana, W.; Adlassnig, A.; Schuster, J. C.; Gruber, U.

    1997-01-01

    The metallization of aluminium nitride substrates by glass frit free Ti CuAg-thick film pastes were investigated. Adhesion properties of the conductor paste were tested by measuring tensile strength and compared with commercial Cu-thick film pastes (within glass frit). Also numerical analysis of temperature-distribution and thermal extension of metallized aluminium nitride ceramic, induced by a continuous and a pulsed working electronic device were made with a finite element program. (author)

  14. Crystallization of silicon films of submicron thickness by blue-multi-laser-diode annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mugiraneza, Jean de Dieu; Shirai, Katsuya; Suzuki, Toshiharu; Okada, Tatsuya; Noguchi, Takashi [University of the Ryukyus, Okinawa (Japan); Matsushima, Hideki; Hashimoto, Takao; Ogino, Yoshiaki; Sahota, Eiji [Hitachi Computer Peripherals Co. Ltd, Kanagawa (Japan)

    2012-01-15

    Blue-Multi-Laser-Diode Annealing (BLDA) was performed in the continuous wave (CW) mode on Si films as thick as 0.5 {mu}m and 1 {mu}m deposited by rf sputtering. As a result of controlling the laser power from 4.0 to 4.8 W, a whole Si layer of 0.5 {mu}m in thickness was completely crystallized and consisted of a columnar structure of fine grains beneath a partially melted Si surface owing to the high temperature gradient along the depth in the Si layer. After additional hydrogenation in a furnace ambient, the ratio of the photo/dark current under AM 1.5 illumination distinctly improved to 6 times higher than that of as-deposited condition. The BLDA is expected to be applied to thin-film solar cells and/or to thin film transistor (TFT) photo-sensor systems on panels as a new low-temperature poly-silicon (LTPS) fabrication technique.

  15. Impact of thickness reduction of the ZnO:Al window layer on opto-electronical properties of CIGSSe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Keller, Jan; Knipper, M.; Parisi, J.; Riedel, I. [Thin Film Photovoltaics, University of Oldenburg, D-26111 Oldenburg (Germany); Dalibor, T.; Avellan, A. [AVANCIS GmbH and Co. KG, D-81739 Munich (Germany)

    2011-07-01

    The application of highly doped transparent conducting oxides in chalcopyrite solar cells requires an optimized trade-off between optical transmission and sheet-conductivity. In this respect we studied the thickness variation of ZnO:Al films used as window layer in Cu(In,Ga)(Se,S){sub 2} (CIGSSe) thin film solar cells. Thin ZnO:Al layers (200nm) on glass exhibit significantly enhanced transmission at wavelengths {lambda}<400nm while a considerable sub-bandgap absorption at {lambda}>800nm appears in thicker films which is attributed to free charge carrier absorption. The IV-characteristics of CIGSSe solar cells with d{sub ZnO:Al}=200nm exhibit a strong enhancement of the short-circuit current density J{sub SC} ({delta}J{sub SC}=3mA) as compared to samples with conventional ZnO:Al-film thickness. However, the reduced parallel (R{sub p}) and increased series (R{sub s}) resistance of samples with thin ZnO:Al-layer cause reduction of the fill factor, which has direct consequences for the series connection of cells in a CIGSSe-module. XRD-diffractograms suggest that the high R{sub s} in thin ZnO:Al is not only related to the thickness but also due to reduced (002)-texture that appears to be beneficial for lateral conductivity. By thermographic investigations we are able to directly locate the cell-regimes responsible for the decreased R{sub p}.

  16. The Effect of Carrier Properties on the Ballistic Processing of Sn-0.7 Cu Thick Films

    Science.gov (United States)

    Hille, David M.

    The need for metallic films has increased since the creation of electronic components. The continued miniaturization of systems and components has led to a greater demand for both thick and thin films, especially in the technology field. Computers, hand held devices, and solar cells are a few of the multitudes of uses for these films. This thesis investigates a novel additive manufacturing process known as Ballistic Manufacturing (BM), invented at the Advanced Materials Processing Lab (AMPL) at San Diego State University. Lead free solder (Tin (Sn)-0.7%Copper (Cu)) was chosen as the testing material due to its low melting temperature. The effects of varying thermal conductivity via the change in carrier material type, the effect of raising substrate temperature, and surface finish differences were investigated. An increase in thermal conductivity resulted in an increase in film thickness and decrease in cell size. As substrate temperature was raised, film thickness decreased, while cell size decreased. Surface finish provided a proof of concept to the transfer of substrate features to the resultant film surface. Evaluation of dendritic microstructures led to relative cooling rates reflective of changes in parameters. The mechanical behavior was also investigated using tensile tests to determine stress-stain relationships and measure elastic modulus. With the current work of this thesis, and previous work by Cavero and Stewart, Ballistic Manufacturing is proven to be an alternative method in the production of metallic films.

  17. Application of freeze-drying technology in manufacturing orally disintegrating films.

    Science.gov (United States)

    Liew, Kai Bin; Odeniyi, Michael Ayodele; Peh, Kok-Khiang

    2016-01-01

    Freeze drying technology has not been maximized and reported in manufacturing orally disintegrating films. The aim of this study was to explore the freeze drying technology in the formulation of sildenafil orally disintegrating films and compare the physical properties with heat-dried orally disintegrating film. Central composite design was used to investigate the effects of three factors, namely concentration of carbopol, wheat starch and polyethylene glycol 400 on the tensile strength and disintegration time of the film. Heat-dried films had higher tensile strength than films prepared using freeze-dried method. For folding endurance, freeze-dried films showed improved endurance than heat-dried films. Moreover, films prepared using freeze-dried methods were thicker and had faster disintegration time. Formulations with higher amount of carbopol and starch showed higher tensile strength and thickness whereas formulations with higher PEG 400 content showed better flexibility. Scanning electron microscopy showed that the freeze-dried films had more porous structure compared to the heat-dried film as a result of the release of water molecule from the frozen structure when it was subjected to freeze drying process. The sildenafil film was palatable. The dissolution profiles of freeze-dried and heat-dried films were similar to Viagra® with f2 of 51.04 and 65.98, respectively.

  18. Micro-structuring of thick NdFeB films using high-power plasma etching for magnetic MEMS application

    International Nuclear Information System (INIS)

    Jiang, Yonggang; Fujita, Takayuki; Higuchi, Kohei; Maenaka, Kazusuke; Masaoka, Shingo; Uehara, Minoru

    2011-01-01

    This paper describes the micro-patterning of thick NdFeB magnetic films using a high-power plasma etching method. The effects of RF bias power and gas composition on the selectivity and etching rate are experimentally studied. A maximum etching rate of 60 nm min −1 is achieved with an inductively coupled plasma power of 500 W and a RF bias power of 200 W. A maximum selectivity of 0.26 between hard baked AZP4903 photoresist and NdFeB magnetic films is achieved when volumetric Cl 2 concentration is 2.5%. NdFeB micro-magnets as thick as 4.2 µm are achieved by using AZP4903 photoresist. Magnetic film as thick as 10 µm can be patterned by using SU-8 photoresist with a thickness of 100 µm as the mask. The magnetic property of patterned microstructures is characterized using a vibrating sample magnetometer and the magnetic field distribution is measured using a Hall effect sensor IC. The characterization results indicate that the patterned magnetic microstructures have a high magnetic remanance of 1.0 T, which is comparable to that of the non-patterned NdFeB films.

  19. Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n-GaAs/In sandwich structure

    Energy Technology Data Exchange (ETDEWEB)

    Oezakin, Oguzhan; Guezeldir, Betuel; Saglam, Mustafa [Department of Physics, Science Faculty, Atatuerk University, Erzurum (Turkey); Yildirim, M. Ali [Department of Physics, Science and Art Faculty, Erzincan University, Erzincan (Turkey); Ates, Aytunc [Department of Material Engineering, Faculty of Engineering and Natural Sciences, Yildirim Beyazit University, Ankara (Turkey)

    2012-04-15

    ZnS thin films were deposited on glass substrates using SILAR method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological and optical properties of ZnS thin films was investigated. The crystalline and surface properties of the films improved with increasing film thickness. The energy bandgap values changed from 3.87 to 3.58 eV with increasing film thickness. The refractive index (n), high frequency dielectric constant ({epsilon}{sub {infinity}}) values were calculated by using the energy bandgap values as a function of the film thickness. Also, ZnS thin film was deposited directly on n-GaAs substrate for obtaining the Zn/ZnS/n-GaAs/In sandwich structure at room temperature. The sandwich structure demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves at room temperature. From I-V characteristics n and {phi}{sub b} values were calculated as 1.894 and 0.632 eV at room temperature, respectively. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Enhanced electron emission from coated metal targets: Effect of surface thickness on performance

    Directory of Open Access Journals (Sweden)

    Saibabu Madas

    2018-03-01

    Full Text Available In this work, we establish an analytical formalism to address the temperature dependent electron emission from a metallic target with thin coating, operating at a finite temperature. Taking into account three dimensional parabolic energy dispersion for the target (base material and suitable thickness dependent energy dispersion for the coating layer, Fermi Dirac statistics of electron energy distribution and Fowler’s mechanism of the electron emission, we discuss the dependence of the emission flux on the physical properties such as the Fermi level, work function, thickness of the coating material, and operating temperature. Our systematic estimation of how the thickness of coating affects the emission current demonstrates superior emission characteristics for thin coating layer at high temperature (above 1000 K, whereas in low temperature regime, a better response is expected from thicker coating layer. This underlying fundamental behavior appears to be essentially identical for all configurations when work function of the coating layer is lower than that of the bulk target work function. The analysis and predictions could be useful in designing new coated materials with suitable thickness for applications in the field of thin film devices and field emitters.

  1. Enhanced electron emission from coated metal targets: Effect of surface thickness on performance

    Science.gov (United States)

    Madas, Saibabu; Mishra, S. K.; Upadhyay Kahaly, Mousumi

    2018-03-01

    In this work, we establish an analytical formalism to address the temperature dependent electron emission from a metallic target with thin coating, operating at a finite temperature. Taking into account three dimensional parabolic energy dispersion for the target (base) material and suitable thickness dependent energy dispersion for the coating layer, Fermi Dirac statistics of electron energy distribution and Fowler's mechanism of the electron emission, we discuss the dependence of the emission flux on the physical properties such as the Fermi level, work function, thickness of the coating material, and operating temperature. Our systematic estimation of how the thickness of coating affects the emission current demonstrates superior emission characteristics for thin coating layer at high temperature (above 1000 K), whereas in low temperature regime, a better response is expected from thicker coating layer. This underlying fundamental behavior appears to be essentially identical for all configurations when work function of the coating layer is lower than that of the bulk target work function. The analysis and predictions could be useful in designing new coated materials with suitable thickness for applications in the field of thin film devices and field emitters.

  2. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2010-01-01

    Full Text Available Indium molybdenum oxide (IMO films were deposited onto the polyethersulfone (PES substrates by ion-beam-assisted evaporation (IBAE deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222. The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness pv of 8.75 nm and an average visible transmittance of 78.7%.

  3. Fabrication and analysis of single-crystal KTiOPO₄ films with thicknesses in the micrometer range.

    Science.gov (United States)

    Ma, Changdong; Lu, Fei; Xu, Bo; Fan, Ranran

    2016-02-01

    Single-crystal potassium titanyl phosphate (KTiOPO4, KTP) films with thicknesses less than 5 μm are obtained by using helium (He) implantation combined with ion-beam-enhanced etching. A heavily damaged layer created by a 4×10(16)  cm(-2) fluence of 2 MeV He implantation is removed by means of wet chemical etching in hydrofluoric acid (HF). Thus, free-standing films of KTP with thicknesses in the range of 3-5 μm are obtained. The etching rate can be adjusted over a wide range by choosing temperature and HF concentration, as well as annealing conditions. Sharp etching edges and the smooth surface of the film indicate that a high selective-etching rate is achieved in the damaged layer, and the remaining part of the crystal is undamaged. X-ray and Raman-scattering results prove that KTP films have good single-crystal properties.

  4. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    International Nuclear Information System (INIS)

    Akaltun, Yunus

    2015-01-01

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m_e"⁎/m_o) and static and frequency dielectric constants (ε_o, ε_∞) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  5. Local nanostructuring of gold thin films through dewetting induced by Ga{sup +} irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Lo Savio, R., E-mail: roberto.lo.savio@edu.unige.it [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Repetto, L. [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy); Šetina Batič, B. [Inštitut Za Kovinske Materiale in Tehnologije, Lepi pot 11, 1000 Ljubljana (Slovenia); Firpo, G.; Valbusa, U. [Physics Department and Nanomed Labs, Università di Genova, Via Dodecaneso 33, 16146 Genova (Italy)

    2015-07-01

    Dewetting of ion-irradiated metal films is a consequence of the local melting occurring during the irradiation. In this study we present the dewetting evolution of Au thin films bombarded with Ga{sup +} ions in a focused ion beam system, pointing out the different surface patterns observed in films having different starting thickness and morphology. In fact, in ion-irradiated films thicker than 2 nm the typical features of dewetted liquids appear, i.e. enlarging dry holes surrounded by metal interconnections. On the other side, a different behavior is observed in thinner discontinuous films, where a dense distribution of circular nanoparticles is formed upon irradiation. We studied the dependence of Au nanoparticles distribution obtained for different ion energies and fluences, determining that a maximum fluence of ∼2 × 10{sup 14} Ga/cm{sup 2} can be used to achieve a monomodal distribution of nanoparticles with regular shape, before detrimental effects of sputtering occur.

  6. Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Pedersen, C.M.

    2011-01-01

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer....../mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency....

  7. Characterization of thick and thin film SiCN for pressure sensing at high temperatures.

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40-60 μm) and thick (about 2-3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  8. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  9. Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

    Science.gov (United States)

    Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

    2017-06-01

    Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Optical properties and oxidation of carbonized and cross-linked structures formed in polycarbonate by plasma immersion ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Kosobrodova, E., E-mail: elenak@physics.usyd.edu.au [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia); Kondyurin, A. [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia); Chrzanowski, W. [Faculty of Pharmacy, University of Sydney, NSW 2006 (Australia); Department of Nanobiomedical Science and BK21 PLUS NBM Global Research, Center for Regenerative Medicine, Dankook University, Cheonan 330-714 (Korea, Republic of); McCulloch, D.G. [School of Applied Sciences, RMIT University, Melbourne, Victoria 3001 (Australia); McKenzie, D.R.; Bilek, M.M.M. [Department of Applied Plasma and Physics, School of Physics, University of Sydney, NSW 2006 (Australia)

    2014-06-01

    Highlights: • Structure and properties of polycarbonate films spin-coated on silicon are studied. • The films have two thicknesses: thicker and thinner than a depth of ion penetration. • Effect of radio frequency plasma and plasma immersion ion implantation is compared. - Abstract: At ion fluences higher than 5 · 10{sup 15} ions/cm{sup 2}, plasma immersion ion implantation (PIII) of polycarbonate (PC) results in a formation of a carbonized surface layer. The thickness of this layer is close to the depth of ion penetration. A comparison of PIII treated, spin-coated PC films with pre-treatment thicknesses designed to match and exceed the carbonized layer thickness is employed to study the properties of the carbonised layer independently from the less modified underlying structure. At ion fluencies higher than 10{sup 16} ions/cm{sup 2}, the thinner PC film is completely transformed into an amorphous carbon-like material with no traces of the initial PC structure. The thicker films, however, incorporated two layers: a top carbonised layer and a cross-linked layer below. Compared to the two-layered PC film, the completely carbonized layer was found to have a much higher concentration of C=O bonds and much lower concentration of O–H bonds after exposure to atmospheric oxygen. The refractive index of the thicker PC films PIII treated with high ion fluencies is close to the refractive index of diamond-like carbon. Anomalous dispersion of the refractive index of the thicker PC films is observed after formation of the carbonised layer. The refractive index of the thinner PC film has normal dispersion at all ion fluences. At ion fluences of 2 · 10{sup 16} ions/cm{sup 2}, both PC films were found to have the same etching rate as polystyrene. Washing in dichloromethane had no effect on the carbonised layer but affected the underlying material in the case of the thicker PC films leading to a wrinkled structure up to ion fluences of 2 · 10{sup 16} ions/cm{sup 2}. At

  11. Choroidal thickness in traumatic optic neuropathy.

    Science.gov (United States)

    Lee, Ju-Yeun; Eo, Doo-Ri; Park, Kyung-Ah; Oh, Sei Yeul

    2017-12-01

    To examine the choroidal thickness in patients with indirect traumatic optic neuropathy (TON) Methods: Patients with unilateral traumatic optic neuropathy over a period of 4 years were included in this study. Horizontal and vertical enhanced-depth imaging (EDI) from spectral-domain optical coherence tomography (SD-OCT) scans of the fovea were obtained in patients with unilateral TON within 2 weeks of injury. The main outcome measure was the choroidal thickness at nine locations. The choroidal thickness was compared between affected and unaffected eyes in the TON group, and the mean difference in the choroidal thickness in both eyes was compared between TON and control groups. A total of 16 patients and 20 control subjects were included. The choroidal thickness at horizontal, vertical and average subfoveal, inner temporal, and outer inferior locations was significantly thicker (13-23%) in affected eyes than in unaffected fellow eyes (p = 0.042, 0.046, 0.024, 0.013, 0.018, and 0.027, respectively). The mean difference value between choroidal thickness measurements in both eyes was significantly larger in the TON group than in the control group at the horizontal, vertical and average subfoveal, inner temporal, inner nasal, inner superior, inner inferior, and outer superior locations (p = 0.001, 0.011,  0.05). Eyes affected by TON showed a regionally thicker choroid than unaffected fellow eye. This thick choroid might be due to impaired blood circulation and vascular remodeling of the optic nerve head and choroid. These results help to better understand the pathophysiology of TON.

  12. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  13. Dynamic film thickness between bubbles and wall in a narrow channel

    Science.gov (United States)

    Ito, Daisuke; Damsohn, Manuel; Prasser, Horst-Michael; Aritomi, Masanori

    2011-09-01

    The present paper describes a novel technique to characterize the behavior of the liquid film between gas bubbles and the wall in a narrow channel. The method is based on the electrical conductance. Two liquid film sensors are installed on both opposite walls in a narrow rectangular channel. The liquid film thickness underneath the gas bubbles is recorded by the first sensor, while the void fraction information is obtained by measuring the conductance between the pair of opposite sensors. Both measurements are taken on a large two-dimensional domain and with a high speed. This makes it possible to obtain the two-dimensional distribution of the dynamic liquid film between the bubbles and the wall. In this study, this method was applied to an air-water flow ranging from bubbly to churn regimes in the narrow channel with a gap width of 1.5 mm.

  14. Dielectric and Piezoelectric Properties of PZT Composite Thick Films with Variable Solution to Powder Ratios.

    Science.gov (United States)

    Wu, Dawei; Zhou, Qifa; Shung, Koping Kirk; Bharadwaja, Srowthi N; Zhang, Dongshe; Zheng, Haixing

    2009-05-08

    The use of PZT films in sliver-mode high-frequency ultrasonic transducers applications requires thick, dense, and crack-free films with excellent piezoelectric and dielectric properties. In this work, PZT composite solutions were used to deposit PZT films >10 μm in thickness. It was found that the functional properties depend strongly on the mass ratio of PZT sol-gel solution to PZT powder in the composite solution. Both the remanent polarization, P(r), and transverse piezoelectric coefficient, e(31,) (f), increase with increasing proportion of the sol-gel solution in the precursor. Films prepared using a solution-to-powder mass ratio of 0.5 have a remanent polarization of 8 μC/cm(2), a dielectric constant of 450 (at 1 kHz), and e(31,) (f) = -2.8 C/m(2). Increasing the solution-to-powder mass ratio to 6, the films were found to have remanent polarizations as large as 37 μC/cm(2), a dielectric constant of 1250 (at 1 kHz) and e(31,) (f) = -5.8 C/m(2).

  15. Thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films

    International Nuclear Information System (INIS)

    Silva, E F; Corrêa, M A; Chesman, C; Bohn, F; Della Pace, R D; Plá Cid, C C; Kern, P R; Carara, M; Alves Santos, O; Rodríguez-Suárez, R L; Azevedo, A; Rezende, S M

    2017-01-01

    We investigate the thickness dependence of the magnetic anisotropy and dynamic magnetic response of ferromagnetic NiFe films. We go beyond quasi-static measurements and focus on the dynamic magnetic response by considering three complementary techniques: the ferromagnetic resonance, magnetoimpedance and magnetic permeability measurements. We verify remarkable modifications in the magnetic anisotropy, i.e. the well-known behavior of in-plane uniaxial magnetic anisotropy systems gives place to a complex magnetic behavior as the thickness increases, and splits the films in two groups according to the magnetic properties. We identify magnetoimpedance and magnetic permeability curves with multiple resonance peaks, as well as the evolution of the ferromagnetic resonance absorption spectra, as fingerprints of strong changes of the magnetic properties associated to the vanishing of the in-plane magnetic anisotropy and to the emergence of non-homogeneous magnetization configuration, local anisotropies and out-of-plane anisotropy contribution arisen as a consequence of the non-uniformities of the stress stored in the film as the thickness is increased and/or to the columnar growth of the film. We interpret the experimental results in terms of the structural and morphological properties, quasi-static magnetic behavior, magnetic domain structure and different mechanisms governing the magnetization dynamics at distinct frequency ranges. (paper)

  16. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Science.gov (United States)

    Chang, R. C.; Li, T. C.; Lin, C. W.

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  17. Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

    Directory of Open Access Journals (Sweden)

    Weimin Li

    2016-01-01

    Full Text Available Molybdenum (Mo thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP deposited bottom layer and a low pressure (LP deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

  18. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    OpenAIRE

    Bakrania, Smitesh D.; Wooldridge, Margaret S.

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition meth...

  19. Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

    Science.gov (United States)

    Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

    2015-01-01

    We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

  20. Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

    Science.gov (United States)

    Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

    2018-06-01

    In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

  1. Calculation of Oil Film Thickness from Damping Coefficients for a Piston Ring in an Internal Combustion Engine

    DEFF Research Database (Denmark)

    Christiansen, Jens; Klit, Peder; Vølund, Anders

    2007-01-01

    engine. The basic idea is to use the fluid film damping coefficients to estimate the film thickness variation for a piston ring under cyclic varying load. Reynolds Equation is solved for a piston ring and the oil film thickness is determined. In this analysis hydrodynamic lubrication is assumed......In 1966 Jorgen W. Lund published an approach to find the dynamic coefficients of a journal bearing by a first order perturbation of the Reynold's equation. These coefficients made it possible to perform a rotor-bearing stability analysis for a statically loaded bearing. In the mid seventies Jorgen...

  2. Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

    International Nuclear Information System (INIS)

    Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

    2014-01-01

    Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

  3. The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2016-08-28

    The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

  4. Effect of beam expansion loss in a carbon nanotube-doped PVA film on passively mode-locked erbium-doped fiber lasers with different feedback ratios

    International Nuclear Information System (INIS)

    Cheng, Kuang-Nan; Chi, Yu-Chieh; Cheng, Chih-Hsien; Lin, Yung-Hsiang; Lo, Jui-Yung; Lin, Gong-Ru

    2014-01-01

    The effect of beam expansion induced divergent loss in a single-wall carbon nanotube (SWCNT) doped polyvinyl alcohol (PVA) based ultrafast saturable absorber (SA) film thickness on the passive mode-locking (PML) performances of erbium-doped fiber lasers are demonstrated. The variation on the PML pulsewidth of the EDFL is discussed by changing the SWCNT-PVA SA film thicknesses, together with adjusting the pumping power and the intra-cavity feedback ratio. An almost 6 dB increment of divergent loss when enlarging the SWCNT-PVA based SA film thickness from 30–130 µm is observed. When shrinking the SA thickness to 30 µm at the largest pumping power of 52.5 mW, the optical spectrum red-shifts to 1558.8 nm with its 3 dB spectral linewidth broadening up to 2.7 nm, while the pulse has already entered the soliton regime with multi-order Kelly sidebands aside the spectral shoulder. The soliton pulsewidth is as short as 790 fs, which is much shorter than those obtained with other thicker SWCNT doped PVA polymer film based SAs; therefore, the peak power from the output of the PML-EDFL is significantly enlarged accompanied by a completely suppressed residual continuous-wave level to achieve the largest on/off extinction ratio. The main mechanism of pulse shortening with reducing thickness of SWCNT doped PVA polymer film based SA is attributed to the limited beam expansion as well as the enlarged modulation depth, which results in shortened soliton pulsewidth with a clean dc background, and broadened spectrum with enriched Kelly sidebands. The increase of total SWCNT amount in the thicker SA inevitably causes a higher linear absorption; hence, the mode-locking threshold also rises accordingly. By enlarging pumping power from 38.5–52.5 mW, the highest ascent on pulse extinction of up to 32 dB is observed among all kinds of feedback conditions. Nevertheless, the enlargement on the extinction slightly decays with increasing the feedback ratio from 30–90

  5. Characterization of interference thin films grown on stainless steel surface by alternate pulse current in a sulphochromic solution

    Directory of Open Access Journals (Sweden)

    Rosa Maria Rabelo Junqueira

    2008-12-01

    Full Text Available The aim of this work was to characterize thin interference films grown on the surface of AISI 304 stainless steel for decorative purposes. Films were grown in a sulphochromic solution at room temperature by an alternating pulse current method. The morphology and chemical state of the elements in the films were investigated by field emission scanning electron microscopy (FESEM, atomic force microscopy (AFM, glow discharge optical emission spectrometry (GDOES, and infrared Fourier transform spectroscopy (FTIR. Depth-sensing indentation (DSI experiments and wear abrasion tests were employed to assess the mechanical resistance of the films. The coloration process resulted in porous thin films which increased the surface roughness of the substrate. The interference films mainly consisted of hydrated chromium oxide containing iron. Increasing film thickness produced different colors and affected the mechanical properties of the coating-substrate system. Thicker films, such as those producing gold and green colors, were softer but more abrasion resistant.

  6. Origin of open recoil curves in L1_0-A1 FePt exchange coupled nanocomposite thin film

    International Nuclear Information System (INIS)

    Goyal, Rajan; Kapoor, Akanksha; Lamba, S.; Annapoorni, S.

    2016-01-01

    Mixed phase FePt systems with intergranular coupling may be looked upon as natural exchange spring systems. The coupling strength between the soft and hard phase in these systems can be analyzed using recoil curves. However, the origin of open recoil curves depicting the breakdown of exchange coupling or anisotropy variation in hard phase is still an ambiguity and requires an in-depth analysis. In order to investigate this, an analysis of the recoil curves for L1_0–A1 FePt nanocomposite thin films of varying thickness have been performed. The switching field distribution reveals that the maximum of openness of recoil curve is directly proportional to the amount of uncoupled soft phase present in the system. The coupling between the hard and soft phase is also found to increase with the thickness of the film. Monte Carlo simulations on a model three dimensional array of interacting nanomagnetic grains provide further insight into the effect of inter granular exchange interactions between the soft and hard phases. - Highlights: • L1_0-A1 FePt nanocomposites thin films of different thickness have been fabricated by DC sputtering. • Hysteresis curve measurements exhibit perfect single phase (L1_0) like behavior for thicker films. • SFD reveals that the openness of recoil curves is directly linked with the amount of uncoupled soft (A1) phase. • Monte Carlo simulation predicts that the extent of exchange interaction increases with thickness of the film.

  7. Effect of thickness on the structural and optical properties of CuO thin films grown by successive ionic layer adsorption and reaction

    Energy Technology Data Exchange (ETDEWEB)

    Akaltun, Yunus, E-mail: yakaltun@erzincan.edu.tr

    2015-11-02

    CuO thin films were synthesised on glass substrates at room temperature using successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on characteristic parameters such as the structural, morphological and optical properties of the films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all of the films exhibited polycrystalline structure with monoclinic phases and covered the glass substrates well. The crystalline and morphology of the films improved with increasing film thickness. The optical band gap decreased from 2.03 to 1.79 eV depending on the film thickness. The refractive index (n), electron effective mass (m{sub e}{sup ⁎}/m{sub o}) and static and frequency dielectric constants (ε{sub o}, ε{sub ∞}) were determined using the energy band gap values. - Highlights: • CuO thin films were deposited using SILAR method. • The electron effective mass, refractive index, dielectric constant values were calculated. • Characterisation of the films has been performed using XRD, SEM, Raman and optical measurements. • The d values of the planes of with thickness show no variation.

  8. Fused-Ring Acceptors with Asymmetric Side Chains for High-Performance Thick-Film Organic Solar Cells.

    Science.gov (United States)

    Feng, Shiyu; Zhang, Cai'e; Liu, Yahui; Bi, Zhaozhao; Zhang, Zhe; Xu, Xinjun; Ma, Wei; Bo, Zhishan

    2017-11-01

    A kind of new fused-ring electron acceptor, IDT-OB, bearing asymmetric side chains, is synthesized for high-efficiency thick-film organic solar cells. The introduction of asymmetric side chains can increase the solubility of acceptor molecules, enable the acceptor molecules to pack closely in a dislocated way, and form favorable phase separation when blended with PBDB-T. As expected, PBDB-T:IDT-OB-based devices exhibit high and balanced hole and electron mobility and give a high power conversion efficiency (PCE) of 10.12%. More importantly, the IDT-OB-based devices are not very sensitive to the film thickness, a PCE of 9.17% can still be obtained even the thickness of active layer is up to 210 nm. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Nanomechanical testing of circular freestanding polymer films with sub-micron thickness

    International Nuclear Information System (INIS)

    Maner, Kyle C.; Begley, Matthew R.; Oliver, Warren C.

    2004-01-01

    This paper describes techniques to create freestanding films over perfectly circular spans (windows) and measure their mechanical properties using instrumented nanoindentation. Test samples were created by spin-casting polymer films over glass plates with embedded fibers, which were subsequently etched using a relatively weak acid to leave freestanding circular spans. The freestanding spans were tested using an instrumented nanoindenter over a wide range of applied loads and displacements. Material properties can be extracted from measured load-deflection responses using straightforward models for point-loads on circular plates or membranes. Results are presented for poly(methyl methacrylate) and poly(2,6,dimethyl,1,4,phenylene ether) films with thickness ranging from 350 to 750 nm. The properties derived from freestanding tests are compared with traditional nanoindentation of films on intact substrates. The freestanding approach has key advantages for characterizing micron-scale behavior of compliant materials, notably greater ease and applicability of sample preparation over other micro-fabrication techniques and straightforward analytical or numerical models

  10. Measurement of the magnetic penetration depth in p-doped superconducting diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, Lorenz; Brunner, Markus C.P.; Schneider, Ina; Kronfeldner, Klaus [University of Regensburg (Germany); Bousquet, Jessica; Bustarret, Etienne; Strunk, Christoph [Institut Neel, Grenoble (France)

    2016-07-01

    Boron-doped diamond becomes superconducting once a critical doping concentration of 4.5 x 10{sup 20} cm{sup -3} is reached. Mutual inductance measurements with a two-coil setup have been performed to determine the magnetic penetration depth λ(T), which is a measure for the superfluid stiffnes θ ∝ 1/λ{sup 2}(T). Two superconducting p-doped diamond films with thicknesses of 145 nm and 345 nm were investigated. At low temperatures these values agree reasonably with the values expected within BCS-theory using T{sub c}, carrier density and mean free path determined from electric transport measurements. Magnetic penetration depths of 3.7 μm for the thinner and 2.6 μm for the thicker film have been found. λ decreases and accordingly θ increases with increasing film thickness. On the other hand, the superfluid stiffness drops by a factor of 2 or even more at T{sub c}/2, i.e., much faster than expected from BCS-theory, but remains finite between T{sub c}/2 < T < T{sub c}. At present it is unclear, whether this behavior results from the proliferation of phase fluctuations already far below T{sub c} or from a spatial inhomogeneity of the films.

  11. Thickness oscillations of the transport properties in n-type Bi{sub 2}Te{sub 3} topological insulator thin films

    Energy Technology Data Exchange (ETDEWEB)

    Rogacheva, E.I., E-mail: rogacheva@kpi.kharkov.ua [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Budnik, A.V.; Sipatov, A.Yu.; Nashchekina, O.N. [National Technical University “Kharkov Polytechnic Institute”, 21 Frunze Street, Kharkov 61002 (Ukraine); Fedorov, A.G. [Institute for Single Crystals of NAS of Ukraine, 60 Lenin Prospect, Kharkov 61001 (Ukraine); Dresselhaus, M.S.; Tang, S. [Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, MA 02139 (United States)

    2015-11-02

    The dependences of the electrical conductivity, Seebeck coefficient and Hall coefficient on the thickness (d = 20–155 nm) of the n-type thin films grown on the glass substrates by the thermal evaporation in vacuum of the n-type Bi{sub 2}Te{sub 3} topological insulator crystals have been measured. It has been established that these dependences have an oscillatory character with a substantial amplitude. The obtained results are interpreted in terms of quantum size effects, taking into account the peculiar properties of the surface layers of the Bi{sub 2}Te{sub 3} films connected with the topological insulator nature of the bismuth telluride. - Highlights: • The thickness dependences of Bi{sub 2}Te{sub 3} thin films kinetic coefficients were obtained. • The dependences have oscillatory character with a substantial undamped amplitude. • The oscillation period increases with decreasing film thickness. • The oscillations are attributed to electron confinement in the film growth direction. • It is suggested that topological surface layer affects quantum processes in films.

  12. Effect of the thickness reduction on the structural, surface and magnetic properties of α-Fe{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aragón, Fermin F.H., E-mail: fherrera@fis.unb.br [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Ardisson, José D. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Aquino, Juan C.R. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Gonzalez, Ismael; Macedo, Waldemar A.A. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Coaquira, José A.H.; Mantilla, John; Silva, Sebastião W. da; Morais, Paulo C. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil)

    2016-05-31

    Hematite (α-Fe{sub 2}O{sub 3}) polycrystalline thin films of different thicknesses were produced by thermal oxidation in air atmosphere from Fe metallic thin-films deposited by radio frequency (RF) sputtering technique. X-ray diffraction (XRD) patterns confirm the formation of hematite phase in all samples and indicate that the mean grain size decreases as the film thickness becomes thinner. Conversion electron Mössbauer spectroscopy (CEMS) spectra at room temperature show magnetic splitting (six line patterns). It is determined that the resonance peaks become broader and asymmetric as the film thickness decreases. This finding was associated with the structural disorder introduced by the thickness reduction. Magnetization as a function of the magnetic field curve obtained at 300 K shows the presence of a weak-ferromagnetic contribution, which was assigned to the large density of decompensated spins at the films surface. From the magnetization vs. temperature curves it has been determined that the Morin transition temperature (T{sub M}) is shifted from ~ 240 K to ~ 196 K, meanwhile it becomes more broadened as the film thickness decreases. X-ray photoelectron spectroscopy (XPS) measurements show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions whose population increases as the film becomes thinner. The density of chemisorbed oxygen increases as the film thickness is reduced in agreement with the results obtained from the other measurements in this work. - Highlights: • Hematite thin films with different thickness were deposited by RF sputtering technique. • X-ray diffraction patterns confirm the formation of hematite phase in all samples. • Hysteresis curve at 300 K shows the presence of a weak-ferromagnetic phase. • XPS show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions.

  13. Mechanisms of fatigue in LIGA Ni MEMS thin films

    International Nuclear Information System (INIS)

    Yang, Y.; Imasogie, B.I.; Allameh, S.M.; Boyce, B.; Lian, K.; Lou, J.; Soboyejo, W.O.

    2007-01-01

    This paper presents the results of an experimental study of the mechanisms of fatigue in LIGA Ni micro-electro-mechanical systems (MEMS) thin films with micro-scale columnar and nano-scale equiaxed grains. Stress-life behavior is reported for films with thicknesses of 70 and 270 μm. The stress-life data are compared with previously reported data for Ni MEMS films and bulk Ni. The films with the nano-scale grains (15 nm average grain size) are shown to have higher strength and fatigue resistance (stress-life data) than those with columnar grain structures. The thicker films (with a columnar microstructure) are also shown to have comparable fatigue life to annealed Ni, while the thinner films (with a columnar microstructure) have comparable fatigue life to wrought Ni. The underlying mechanisms of crack nucleation and growth are elucidated via scanning and transmission electron microscopy. These reveal the formation of slip bands and surface oxides and crystallographic surface/sub-surface crack nucleation and growth in the films with the columnar structures. Surface and corner crack nucleations (from pre-existing defects) are observed in the nanostructured films. The implications of the results are discussed for the analyses of fatigue in nickel MEMS structures

  14. HoYbBIG epitaxial thick films used for Faraday rotator in the 1.55μm band

    International Nuclear Information System (INIS)

    Zhong, Z.W.; Xu, X.W.; Chong, T.C.; Yuan, S.N.; Li, M.H.; Zhang, G.Y.; Freeman, B.

    2005-01-01

    Ho 3-x-y Yb y Bi x Fe 5 O 12 (HoYbBIG) garnet thick films with Bi content of x=0.9-1.5 were prepared by the liquid phase epitaxy (LPE) method. Optical properties and magneto-optical properties were characterized. The LPE-grown HoYbBIG thick films exhibited large Faraday rotation coefficients up to 1540 o /cm at 1.55μm, and good wavelength and temperature stability

  15. Depth probing of the hydride formation process in thin Pd films by combined electrochemistry and fiber optics-based in situ UV/vis spectroscopy.

    Science.gov (United States)

    Wickman, Björn; Fredriksson, Mattias; Feng, Ligang; Lindahl, Niklas; Hagberg, Johan; Langhammer, Christoph

    2015-07-15

    We demonstrate a flexible combined electrochemistry and fiber optics-based in situ UV/vis spectroscopy setup to gain insight into the depth evolution of electrochemical hydride and oxide formation in Pd films with thicknesses of 20 and 100 nm. The thicknesses of our model systems are chosen such that the films are thinner or significantly thicker than the optical skin depth of Pd to create two distinctly different situations. Low power white light is irradiated on the sample and analyzed in three different configurations; transmittance through, and, reflectance from the front and the back side of the film. The obtained optical sensitivities correspond to fractions of a monolayer of adsorbed or absorbed hydrogen (H) and oxygen (O) on Pd. Moreover, a combined simultaneous readout obtained from the different optical measurement configurations provides mechanistic insights into the depth-evolution of the studied hydrogenation and oxidation processes.

  16. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    Science.gov (United States)

    Zhu, X. H.; Guigues, B.; Defaÿ, E.; Dubarry, C.; Aïd, M.

    2009-02-01

    Ba0.7Sr0.3TiO3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 °C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (˜0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness.

  17. Low temperature perovskite crystallization of highly tunable dielectric Ba0.7Sr0.3TiO3 thick films deposited by ion beam sputtering on platinized silicon substrates

    International Nuclear Information System (INIS)

    Zhu, X. H.; Defaye, E.; Aied, M.; Guigues, B.; Dubarry, C.

    2009-01-01

    Ba 0.7 Sr 0.3 TiO 3 (BST) thick films with thickness up to 1 μm were deposited on Pt-coated silicon substrates by ion beam sputtering, followed by an annealing treatment. It is demonstrated that pure well-crystallized perovskite phase could be obtained in thick BST films by a low temperature process (535 deg. C). The BST thick films show highly tunable dielectric properties with tunability (at 800 kV/cm) up to 51.0% and 66.2%, respectively, for the 0.5 and 1 μm thick films. The relationship between strains and dielectric properties was systematically investigated in the thick films. The results suggest that a comparatively larger tensile thermal in-plane strain (0.15%) leads to the degradation in dielectric properties of the 0.5 μm thick film; besides, strong defect-related inhomogeneous strains (∼0.3%) make the dielectric peaks smearing and broadening in the thick films, which, however, preferably results in high figure-of-merit factors over a wide operating temperature range. Moreover, the leakage current behavior in the BST thick films was found to be dominated by the space-charge-limited-current mechanism, irrespective of the film thickness

  18. Quantification the Effect of the Thickness of Thin Films on their Elastic Parameters

    International Nuclear Information System (INIS)

    Gacem, A.; Doghmane, A.; Hadjoub, Z

    2011-01-01

    The determination of the characteristics and properties of thin films deposited on substrates is necessary in any device application in various fields. Adequate mechanical properties are highly required for the majority of surface waves and semiconductor devices. In this context, modelling the ultrasonic-material interaction, we present results of simulation curves of acoustic signatures for multiple thin film/substrate combinations. The results obtained on several structures (Al, SiO 2 , ZnO, Cu, AlN, SiC and Cr)/(Al 2 O 3 , Si, Cu or Quartz) showed a velocity dispersion of the Rayleigh wave as a function of layer thickness. The development of a theoretical calculation model based on the acoustic behaviour of these structures has enabled us to quantify the dispersive evolution (positive and negative) density. Thus, we have established a universal relationship describing the density-thickness variation. In addition, networks of dispersion curves, representing the evolution of elasticity modulus (Young and shear), were determined. These charts can be used to extract the influence of thickness of layers on the variation of elastic constants.(author)

  19. Flows in films and over flippers

    Science.gov (United States)

    van Nierop, Ernst Adriaan

    Three topics in fluid mechanics are dealt with in this dissertation, namely (i) reactive spreading and recoil of oil on water, (ii) free film formation theory and experiment, and (iii) how humpback whale flippers delay stall. Reactive spreading of an oil droplet on water is described in Chapter 1. Small amounts of acid and base were added to the oil and water respectively, such that a surfactant was produced at the interface between the oil and the water, greatly enhancing spreading rates. After the oil drop spreads out to some maximum radius, the drop recoils on a timescale that is indicative of a diffusive process redistributing the surfactant over the entire volume of water. In Chapter 2, the theory of soap film formation by withdrawal from a bath of soapy liquid is reviewed, and the assumptions supporting Frankel's law are challenged. Stress balances that describe film evolution in either extensional or shear flow are rigorously derived and we find that the strength of surface stress terms pick the resulting flow type. With this background in mind, we describe in Chapter 3 how films were made using aqueous solutions of poly(ethylene oxide) or PEO with and without surfactant. The initial thickness of these films agrees well with existing data in the literature for overlapping ranges of the capillary number Ca. For larger Ca numbers, we observe that (i) the addition of SDS results in thinner films, (ii) films can be made that are thicker than the wire thickness, and (iii) films swell in thickness when the withdrawal process stops. Some potential mechanisms are described to explain the novel swelling phenomenon. Finally, in Chapter 4, we model the bumpy flipper of a humpback whale as a perturbed elliptic wing with Joukowski profiles of varying chord length, and combine this with lifting line theory as well as experimental stall characteristics of smooth wings. This model shows that the perturbations rearrange the downwash distribution on the wing, smoothing the

  20. Dielectric enhancement of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Yasong; Chen, Xiaoyang; Habibul, Arzigul; Zhang, Danyang; Yu, Ping [College of Materials Science and Engineering, Sichuan University, Chengdu, 610064 (China)

    2016-08-15

    Multilayer thick films (∝4 μm) with compositional PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} layers and one-layer PZT thick films were prepared on the silicon substrate by radio-frequency magnetron sputtering. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film are characterized by highly preferential (100)-oriented growth and columnar microstructure due to alternately introducing LaNiO{sub 3} seeding layers. The effects of LaNiO{sub 3} layers on microstructure and electrical properties of PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} thick films were investigated in detail. The results show that both PZT and PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film were pure perovskite crystalline phase. The PbZr{sub 0.3}Ti{sub 0.7}O{sub 3} film texture was dense and well adhered on the LaNiO{sub 3} layer. PbZr{sub 0.3}Ti{sub 0.7}O{sub 3}/LaNiO{sub 3} multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ε{sub r} ∝2450 (10 kHz) and tanδ ∝0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched-shaped polarization-electric field hysteresis loops. The larger Rayleigh parameter, α ∝51.1408 cm kV{sup -1} (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain-wall-defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)