Comment on "Tunable Design of Structural Colors Produced by Pseudo-1D Photonic Crystals of Graphene Oxide" and Thin-Film Interference from Dried Graphene Oxide Film.

Science.gov (United States)

Hong, Seung-Ho; Song, Jang-Kun

2017-04-01

The mechanism of the iridescent color reflection from dried thin graphene oxide (GO) film on Si wafer is clarified. Dissimilarly to the photonic crystalline reflection in aqueous GO dispersion, the color reflection in dried GO film originates from the thin film interference. The peak reflection can reach 23% by optimizing the GO thickness and the substrate. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Air-stable n-type doping of graphene from overlying Si3N4 film

International Nuclear Information System (INIS)

Wang, Zegao; Li, Pingjian; Chen, Yuanfu; Liu, Jingbo; Qi, Fei; Tian, Hongjun; Zheng, Binjie; Zhou, Jinhao

2014-01-01

In this study, we report a facile method to obtain air-stable n-type graphene by plasma-enhanced chemical vapor depositing Si 3 N 4 film on the surface of graphene. We have demonstrated that the overlying Si 3 N 4 film can not only act as the penetration-barrier against H 2 O and O 2 adsorbed on the graphene surface, but also cause an effective n-type doping due to the amine groups at the interface of graphene/Si 3 N 4 . Furthermore, the studies reveal that the Dirac point of graphene can be modulated by the thickness of Si 3 N 4 film, which is due to competing effects of Si 3 N 4 -induced doping (n-type) and penetrating H 2 O (O 2 )-induced doping (p-type). We expect this method to be used for obtaining stable n-type graphene field-effect transistors in air, which will be widely used in graphene electronic devices.

Electrical properties of graphene film for counter electrode in dye sensitized solar cells

Science.gov (United States)

Khalifa, Ali; Shafie, S.; Hasan, W. Z. W.; Lim, H. N.; Rusop, M.; Samaila, Buda

2018-05-01

A graphene counter electrode for dye-sensitized solar cell was prepared simply by drop casting method on a conducting FTO glass at room temperature. Raman spectroscopy was used to study the defection in the graphene films. The sheet resistance was also measured and recoded minimum value of 7.04 Ω/□ at 22.19µm thickness. The casted films show good adhesion to substrates with low defects. A DSSC based on graphene counter electrode demonstrates reasonable conversion efficiency of 2.78% with short circuit current of 7.60mA, open circuit voltage of 0.69V and fill factor of 0.52. The high conductivity and low defects render the prepared graphene dispersion for DSSCs' CE application.

Design and simulation analysis of a novel pressure sensor based on graphene film

Science.gov (United States)

Nie, M.; Xia, Y. H.; Guo, A. Q.

2018-02-01

A novel pressure sensor structure based on graphene film as the sensitive membrane was proposed in this paper, which solved the problem to measure low and minor pressure with high sensitivity. Moreover, the fabrication process was designed which can be compatible with CMOS IC fabrication technology. Finite element analysis has been used to simulate the displacement distribution of the thin movable graphene film of the designed pressure sensor under the different pressures with different dimensions. From the simulation results, the optimized structure has been obtained which can be applied in the low measurement range from 10hPa to 60hPa. The length and thickness of the graphene film could be designed as 100μm and 0.2μm, respectively. The maximum mechanical stress on the edge of the sensitive membrane was 1.84kPa, which was far below the breaking strength of the silicon nitride and graphene film.

3D nanoporous graphene films converted from liquid-crystalline holey graphene oxide for thin and high-performance supercapacitors

Science.gov (United States)

Wang, Bin; Liu, Jinzhang; Zhao, Yi; Zheng, Dezhi; Li, Yan; Sha, Jiangbo

2018-01-01

Holey graphene oxide (HGO) is prepared and its liquid crystal (LC) formation in water is investigated. The blade-coated LC-HGO hydrogel is hydrothermally reduced to form 3D nanoporous films used as supercapacitor electrodes. Holey graphene sheets are rumpled and interconnected to form a cellular structure with pore size around 100 nm during the reduction process. Reduced HGO films with different thicknesses are integrated into solid-state symmetric supercapacitors and their electrochemical performances are studied. High specific capacitance up to 304 F g-1 and high volumetric capacitance around 400 F cm-3 are achieved from our thin and flexible devices.

Horizontally-connected ZnO-graphene hybrid films for multifunctional devices

Energy Technology Data Exchange (ETDEWEB)

Lim, Yi Rang [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Song, Wooseok; Lee, Young Bum; Kim, Seong Ku; Han, Jin Kyu; Myung, Sung; Lee, Sun Sook; An, Ki-Seok [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of); Choi, Chel-Jong [School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Lim, Jongsun, E-mail: jslim@krict.re.kr [Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Yuseong Post Office Box 107, Daejeon 305-600 (Korea, Republic of)

2016-08-30

Highlights: • We designed horizontally-connected ZnO and graphene hybrid nanofilms with improved flexibility for multifunctional nanodevices including high performance TFTs. • The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. • The hybrid thin film transistors exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}. - Abstract: Here we designed horizontally-connected ZnO thin films and graphene in order to combine advantages of ZnO thin films, which are high on/off ratio and photo responsivity, and the superior mobility and sensitivity of graphene for applications in thin film transistors (TFTs) and flexible photodetectors. To synthesize the ZnO/graphene hybrid films, a 70-nm-thick ZnO thin film with a uniformly flat surface deposited by the atomic layer deposition process was horizontally connected with highly crystalline monolayer graphene grown by thermal chemical vapor deposition. The photocurrent on-off ratio, response time, and recovery time of the hybrid photodetectors were estimated to be 10{sup 2}, 34 s, and 27 s, respectively. The photocurrent from the hybrid photodetector decreased only by two-fold, whereas a significant decrease in photocurrent by two orders of magnitude was observed from the ZnO thin film based photodetectors after 10{sup 5} cycles of 5-mm radius bending. The hybrid TFT exhibited unipolar n-channel transistor behavior with electron mobility of 68.7 cm{sup 2}/V s and on-off ratio of 10{sup 7}.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

Science.gov (United States)

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-01

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Transient absorption microscopy studies of energy relaxation in graphene oxide thin film.

Science.gov (United States)

Murphy, Sean; Huang, Libai

2013-04-10

Spatial mapping of energy relaxation in graphene oxide (GO) thin films has been imaged using transient absorption microscopy (TAM). Correlated AFM images allow us to accurately determine the thickness of the GO films. In contrast to previous studies, correlated TAM-AFM allows determination of the effect of interactions of GO with the substrate and between stacked GO layers on the relaxation dynamics. Our results show that energy relaxation in GO flakes has little dependence on the substrate, number of stacked layers, and excitation intensity. This is in direct contrast to pristine graphene, where these factors have great consequences in energy relaxation. This suggests intrinsic factors rather than extrinsic ones dominate the excited state dynamics of GO films.

Transient absorption microscopy studies of energy relaxation in graphene oxide thin film

International Nuclear Information System (INIS)

Murphy, Sean; Huang, Libai

2013-01-01

Spatial mapping of energy relaxation in graphene oxide (GO) thin films has been imaged using transient absorption microscopy (TAM). Correlated AFM images allow us to accurately determine the thickness of the GO films. In contrast to previous studies, correlated TAM–AFM allows determination of the effect of interactions of GO with the substrate and between stacked GO layers on the relaxation dynamics. Our results show that energy relaxation in GO flakes has little dependence on the substrate, number of stacked layers, and excitation intensity. This is in direct contrast to pristine graphene, where these factors have great consequences in energy relaxation. This suggests intrinsic factors rather than extrinsic ones dominate the excited state dynamics of GO films. (paper)

Surface acoustic wave propagation in graphene film

International Nuclear Information System (INIS)

Roshchupkin, Dmitry; Plotitcyna, Olga; Matveev, Viktor; Kononenko, Oleg; Emelin, Evgenii; Irzhak, Dmitry; Ortega, Luc; Zizak, Ivo; Erko, Alexei; Tynyshtykbayev, Kurbangali; Insepov, Zinetula

2015-01-01

Surface acoustic wave (SAW) propagation in a graphene film on the surface of piezoelectric crystals was studied at the BESSY II synchrotron radiation source. Talbot effect enabled the visualization of the SAW propagation on the crystal surface with the graphene film in a real time mode, and high-resolution x-ray diffraction permitted the determination of the SAW amplitude in the graphene/piezoelectric crystal system. The influence of the SAW on the electrical properties of the graphene film was examined. It was shown that the changing of the SAW amplitude enables controlling the magnitude and direction of current in graphene film on the surface of piezoelectric crystals

Free-standing graphene films prepared via foam film method for great capacitive flexible supercapacitors

Science.gov (United States)

Zhu, Yucan; Ye, Xingke; Tang, Zhonghua; Wan, Zhongquan; Jia, Chunyang

2017-11-01

Recently, graphene films have always attracted attention due to their excellent characteristics in energy storage. In this work, a novel graphene oxide (GO) film with excellent mechanical properties, whose thickness was regulated simply via changing the concentration of the surfactant, was successfully prepared by foam film method. After chemical reduction, the reduced GO (rGO) films have excellent electrical conductivity of ∼172 S cm-1. Moreover, the supercapacitors based on the rGO films exhibit satisfied capacitive performance of ∼56 mF cm-2 at 0.2 mA cm-2 in 6 M KOH aqueous solution. Meanwhile, the flexible all solid state supercapacitors (FSSCs) based on the rGO films also show great volumetric capacitance of ∼2810 mF cm-3 at 12 mA cm-3 (∼1607 mF cm-3 at 613 mA cm-3) with polyvinyl alcohol-KOH gel electrolyte. Besides, after 10000 cycles and continuously bent to 180° for 300 times, the volumetric capacitance of the FSSC remains at 81.4% and 90.4% of its initial capacitance value, respectively. Therefore, the free-standing rGO films prepared via foam film method could be considered as promising electrode materials for high performance flexible supercapacitors.

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

Highly controllable and green reduction of graphene oxide to flexible graphene film with high strength

International Nuclear Information System (INIS)

Wan, Wubo; Zhao, Zongbin; Hu, Han; Gogotsi, Yury; Qiu, Jieshan

2013-01-01

Graphical abstract: Highly controllable and green reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant. Self-assembly of the as-made CCG sheets results in a flexible CCG film, of which the tensile strength strongly depends on the deoxygenation degree of graphene sheets. - Highlights: • Graphene was synthesized by an effective and environmentally friendly approach. • We introduced a facile X-ray diffraction analysis method to investigate the reduction process from graphene oxide to graphene. • Flexible graphene films were prepared by self-assembly of the graphene sheets. • The strength of the graphene films depends on the reduction degree of graphene. - Abstract: Graphene film with high strength was fabricated by the assembly of graphene sheets derived from graphene oxide (GO) in an effective and environmentally friendly approach. Highly controllable reduction of GO to chemical converted graphene (CCG) was achieved with sodium citrate as a facile reductant, in which the reduction process was monitored by XRD analysis and UV–vis absorption spectra. Self-assembly of the as-made CCG sheets results in a flexible CCG film. This method may open an avenue to the easy and scalable preparation of graphene film with high strength which has promising potentials in many fields where strong, flexible and electrically conductive films are highly demanded

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

International Nuclear Information System (INIS)

Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

2015-01-01

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

Energy Technology Data Exchange (ETDEWEB)

Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

2015-12-29

Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

Ion Diffusion-Directed Assembly Approach to Ultrafast Coating of Graphene Oxide Thick Multilayers.

Science.gov (United States)

Zhao, Xiaoli; Gao, Weiwei; Yao, Weiquan; Jiang, Yanqiu; Xu, Zhen; Gao, Chao

2017-10-24

The layer-by-layer (LbL) assembly approach has been widely used to fabricate multilayer coatings on substrates with multiple cycles, whereas it is hard to access thick films efficiently. Here, we developed an ion diffusion-directed assembly (IDDA) strategy to rapidly make multilayer thick coatings in one step on arbitrary substrates. To achieve multifunctional coatings, graphene oxide (GO) and metallic ions were selected as the typical building blocks and diffusion director in IDDA, respectively. With diffusion of metallic ions from substrate to negatively charged GO dispersion spontaneously (i.e., from high-concentration region to low-concentration region), GO was assembled onto the substrate sheet-by-sheet via sol-gel transformation. Because metallic ions with size of subnanometers can diffuse directionally and freely in the aqueous dispersion, GO was coated on the substrate efficiently, giving rise to films with desired thickness up to 10 μm per cycle. The IDDA approach shows three main merits: (1) high efficiency with a μm-scale coating rate; (2) controllability over thickness and evenness; and (3) generality for substrates of plastics, metals and ceramics with any shapes and morphologies. With these merits, IDDA strategy was utilized in the efficient fabrication of functional graphene coatings that exhibit outstanding performance as supercapacitors, electromagnetic interference shielding textiles, and anticorrosion coatings. This IDDA approach can be extended to other building blocks including polymers and colloidal nanoparticles, promising for the scalable production and application of multifunctional coatings.

Chitosan/graphene oxide biocomposite film from pencil rod

Science.gov (United States)

Gea, S.; Sari, J. N.; Bulan, R.; Piliang, A.; Amaturrahim, S. A.; Hutapea, Y. A.

2018-03-01

Graphene Oxide (GO) has been succesfully synthesized using Hummber method from graphite powder of pencil rod. The excellent solubility of graphene oxide (GO)in water imparts its feasibilty as new filler for reinforcement hydrophilic biopolymers. In this research, the biocomposite film was fabricated from chitosan/graphene oxide. The characteristics of graphene oxide were investigated using Fourier Transform Infrared (FT-IR) and X-ray Diffraction (XRD). The results of the XRD showed graphene structur in 2θ, appeared at 9.0715°with interlayer spacing was about 9.74063Å. Preparation films with several variations of chitosan/graphene oxide was done by casting method and characterized by mechanical and morphological analysis. The mechanical properties of the tensile test in the film show that the film CS/GO (85: 15)% has the optimum Young’s modulus size of 2.9 GPa compared to other variations of CS / GO film. Morphological analysis film CS/GO (85:15)% by Scanning Electron Microscopy (SEM), the obtained biocomposites film showed fine dispersion of GO in the CS matrix and could mix each other homogeneously.

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

Science.gov (United States)

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Single crystalline metal films as substrates for graphene growth

Energy Technology Data Exchange (ETDEWEB)

Zeller, Patrick; Henss, Ann-Kathrin; Wintterlin, Joost [Department Chemie, Ludwig-Maximilians-Universitaet Muenchen (Germany); Weinl, Michael; Schreck, Matthias [Institut fuer Physik, Universitaet Augsburg (Germany); Speck, Florian; Ostler, Markus [Lehrstuhl fuer Technische Physik, Universitaet Erlangen-Nuernberg, Erlangen (Germany); Institut fuer Physik, Technische Universitaet Chemnitz (Germany); Seyller, Thomas [Institut fuer Physik, Technische Universitaet Chemnitz (Germany)

2017-11-15

Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. For analysis a variety of surface science methods were used. By an initial annealing step the surface quality of the films was strongly improved. The temperature treatments of the metal films caused a pattern of slip lines, formed by thermal stress in the films, which, however, did not affect the graphene quality and even prevented wrinkle formation. Graphene was successfully grown on all three types of metal films in a quality comparable to graphene grown on bulk single crystals of the same metals. In the case of the Ni(111) films the originally obtained domain structure of rotational graphene phases could be transformed into a single domain by annealing. This healing process is based on the control of the equilibrium between graphene and dissolved carbon in the film. For the system graphene/Ni(111) the metal, after graphene growth, could be removed from underneath the epitaxial graphene layer by a pure gas phase reaction, using the reaction of CO with Ni to give gaseous Ni(CO){sub 4}. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Equilibrium helium film in the thick film limit

International Nuclear Information System (INIS)

Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

2003-01-01

For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

Science.gov (United States)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Doping graphene films via chemically mediated charge transfer

Directory of Open Access Journals (Sweden)

Ishikawa Ryousuke

2011-01-01

Full Text Available Abstract Transparent conductive films (TCFs are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ, is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.

Electrochemical preparation of poly(methylene blue)/graphene nanocomposite thin films

International Nuclear Information System (INIS)

Erçarıkcı, Elif; Dağcı, Kader; Topçu, Ezgi; Alanyalıoğlu, Murat

2014-01-01

Highlights: • Poly(MB)/graphene thin films are prepared by a simple electrochemical approach. • Graphene layers in the film show a broad band in visible region of absorbance spectra. • Morphology of composite films indicates both disordered and ordered regions. • XRD reveals that nanocomposite films include rGO layers after electropolymerization process. • Chemically prepared graphene is better than electrochemically prepared graphene for electrooxidation of nitrite. - Abstract: Poly(methylene blue)/graphene nanocomposite thin films were prepared by electropolymerization of methylene blue in the presence of graphene which have been synthesized by two different methods of a chemical oxidation process and an electrochemical approach. Synthesized nanocomposite thin films were characterized by using cyclic voltammetry, UV–vis. absorption spectroscopy, powder X-ray diffraction, and scanning tunneling microscopy techniques. Electrocatalytical properties of prepared poly(methylene blue)/graphene nanocomposite films were compared toward electrochemical oxidation of nitrite. Under optimized conditions, electrocatalytical effect of nanocomposite films of chemically prepared graphene through electrochemical oxidation of nitrite was better than that of electrochemically prepared graphene

Ultra-thin Glass Film Coated with Graphene: A New Material for Spontaneous Emission Enhancement of Quantum Emitter

Institute of Scientific and Technical Information of China (English)

Lu Sun; Chun Jiang

2015-01-01

We propose an ultra-thin glass film coated with graphene as a new kind of surrounding material which can greatly enhance spontaneous emission rate(SER) of dipole emitter embedded in it. With properly designed parameters,numerical results show that SER-enhanced factors as high as 1.286 9 106 can be achieved. The influences of glass film thickness and chemical potential/doping level of graphene on spontaneous emission enhancement are also studied in this paper. A comparison is made between graphene and other coating materials such as gold and silver to see their performances in SER enhancement.

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite

International Nuclear Information System (INIS)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H.

2014-01-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Electron field emission from screen-printed graphene/DWCNT composite films

International Nuclear Information System (INIS)

Xu, Jinzhuo; Pan, Rong; Chen, Yiwei; Piao, Xianqin; Qian, Min; Feng, Tao; Sun, Zhuo

2013-01-01

Highlights: ► The field emission performance improved significantly when adding graphene into DWCNTs as the emission material. ► We set up a model of pure DWCNT films and graphene/DWCNT composite films. ► We discussed the contact barrier between emission films and electric substrates by considering the Fermi energies of silver, DWCNT and graphene. - Abstract: The electron field emission properties of graphene/double-walled carbon nanotube (DWCNT) composite films prepared by screen printing have been systematically studied. Comparing with the pure DWCNT films and pure graphene films, a significant enhancement of electron emission performance of the composite films are observed, such as lower turn-on field, higher emission current density, higher field enhancement factor, and long-term stability. The optimized composite films with 20% weight ratio of graphene show the best electron emission performance with a low turn-on field of 0.62 V μm −1 (at 1 μA cm −2 ) and a high field enhancement factor β of 13,000. A model of the graphene/DWCNT composite films is proposed, which indicate that a certain amount of graphene will contribute the electron transmission in the silver substrate/composite films interface and in the interior of composite films, and finally improve the electron emission performance of the graphene/DWCNT composite films.

Direct transfer of graphene films for polyurethane substrate

Energy Technology Data Exchange (ETDEWEB)

Vilani, C.; Romani, E.C.; Larrudé, D.G. [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Barbosa, Gelza M. [Diretoria de Sistemas de Armas da Marinha, Marinha do Brasil, 20010-00 Rio de Janeiro, RJ (Brazil); Freire, F.L., E-mail: lazaro@vdg.fis.puc-rio.br [Departamento de Física, Pontifícia Universidade Católica do Rio de Janeiro, 22451-900 Rio de Janeiro, RJ (Brazil); Centro Brasileiro de Pesquisas Físicas, 22290-180 Rio de Janeiro, RJ (Brazil)

2015-11-30

Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

Direct transfer of graphene films for polyurethane substrate

International Nuclear Information System (INIS)

Vilani, C.; Romani, E.C.; Larrudé, D.G.; Barbosa, Gelza M.; Freire, F.L.

2015-01-01

Highlights: • Graphene was prepared by CVD using copper foils as substrates. • Monolayer, bilayer and multilayer graphene were transferred to PU. • Samples were characterized by Raman and optical spectroscopies. • PU/monolayer graphene has transmittance around 80% in visible range. - Abstract: We have proposed the direct transfer of large-area graphene films grown by chemical vapor deposition to polymeric substrate by evaporating of solvents of polyurethane/tetrahydrofurane solution. The graphene films on polyurethane substrates were characterized by Raman spectroscopy, optical and atomic force microscopies and UV–vis spectroscopy measurements. The Raman spectra revealed that it is possible to transfer in a controlled manner monolayer, bilayer and multilayer graphene films over polyurethane substrate.

Structural Analysis of Planar sp3 and sp2 Films: Diamond-Like Carbon and Graphene Overlayers

KAUST Repository

Mansour, Ahmed

2011-07-07

The special electronic configuration of carbon enables the existence of wide ranging allotropes taking all possible dimensionalities. The allotropes of carbon are characterized by the type of hybridized bonding forming its structure, ranging from pure sp2 as in graphene, carbon nanotubes and fullerenes, to pure sp3 as in diamond. Amorphous and diamond-like carbon consists of a mixture of both hybridizations. This variation in hybridization in carbon materials enables a wide spectrum of properties, ranging from high bulk mechanical hardness, tribological properties and chemical inertness made possible by moving towards pure sp3 bonding to the extraordinary electrical conductivity, optical properties and in-plane mechanical strength resulting from pure sp2 bonding. Two allotropes at the extremes of this spectrum, diamond like carbon (DLC) and graphene, are investigated in this thesis; the former is investigated as a protective coating in hard drive applications, while the latter is investigated in the context of chemically derived graphene as material for transparent conducting electrode applications. DLC thin films are a main component in computer hard drives, acting as a protective coating against corrosion and mechanical wear of the magnetic layer and read-write head. The thickness of DLC films greatly affects the storage density in such devices, as larger separation between the read/write head and the magnetic layer decreases the storage density. A targeted DLC thickness of 2 nm would increase the storage density towards 1 Tbits/inch2. However, difficulty achieving continuous films at such thicknesses by commonly used sputtering methods challenges the industry to investigate alternative methods. Filtered cathodic vacuum arc (FCVA) has been proposed as an efficient technique to provide continuous, smooth and ultra-thin DLC films. We investigate the influence of deposition angle, deposition time, and substrate biasing to define the optimum process window to obtain

Work function of few layer graphene covered nickel thin films measured with Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Eren, B. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland); Material Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States); Gysin, U.; Marot, L., E-mail: Laurent.marot@unibas.ch; Glatzel, Th.; Steiner, R.; Meyer, E. [Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel (Switzerland)

2016-01-25

Few layer graphene and graphite are simultaneously grown on a ∼100 nm thick polycrystalline nickel film. The work function of few layer graphene/Ni is found to be 4.15 eV with a variation of 50 meV by local measurements with Kelvin probe force microscopy. This value is lower than the work function of free standing graphene due to peculiar electronic structure resulting from metal 3d-carbon 2p(π) hybridization.

Time-dependent protection of ground and polished Cu using graphene film

International Nuclear Information System (INIS)

Dong, Yuhua; Liu, Qingqing; Zhou, Qiong

2015-01-01

Highlights: • Graphene was deposited on polished and ground Cu sheets by CVD. • Graphene films provide better protection to polished Cu for short time. • Multilayer graphene films provide better protection for short time. - Abstract: Graphene was deposited on Cu sheets with different morphologies by chemical vapor deposition. Scanning electron microscopy (SEM) analysis indicated that the morphology of the Cu sheet affected the graphene film properties. Electrochemical impedance spectroscopy measurements showed that the graphene film did not effectively protect Cu against corrosion because of prolonged exposure to ionic environments (3.5 wt.% NaCl solution). For short durations, graphene films provided better protection to polished Cu than ground Cu. Prolonged electrolyte immersion of graphene-coated Cu samples showed that the graphene film from the polished Cu surface was detached more easily than that from ground Cu

Intrinsic graphene field effect transistor on amorphous carbon films

OpenAIRE

Tinchev, Savcho

2013-01-01

Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene ...

Structural, chemical and electrical characterisation of conductive graphene-polymer composite films

Energy Technology Data Exchange (ETDEWEB)

Brennan, Barry; Spencer, Steve J.; Belsey, Natalie A. [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Faris, Tsegie [DZP Technologies Ltd., Future Business Centre, Cambridge, CB4 2HY (United Kingdom); Cronin, Harry [DZP Technologies Ltd., Future Business Centre, Cambridge, CB4 2HY (United Kingdom); Advanced Technology Institute (ATI), University of Surrey, Guildford, GU2 7XH (United Kingdom); Silva, S. Ravi P. [Advanced Technology Institute (ATI), University of Surrey, Guildford, GU2 7XH (United Kingdom); Sainsbury, Toby; Gilmore, Ian S. [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom); Stoeva, Zlatka [DZP Technologies Ltd., Future Business Centre, Cambridge, CB4 2HY (United Kingdom); Pollard, Andrew J., E-mail: andrew.pollard@npl.co.uk [National Physical Laboratory, Teddington, TW11 0LW (United Kingdom)

2017-05-01

Graphical abstract: Secondary Ion Mass Spectrometry (SIMS) imaging of the dispersion of graphene within graphene-polymer composites using the Na{sup +} signal. - Highlights: • Relation of properties of graphene flakes with electrical properties of composite. • Standardised characterisation method for structural properties of graphene flakes. • Structural and chemical characterisation of commercial graphene flakes. • ToF-SIMS used to determine dispersion of graphene in polymer. - Abstract: Graphene poly-acrylic and PEDOT:PSS nanocomposite films were produced using two alternative commercial graphene powders to explore how the graphene flake dimensions and chemical composition affected the electrical performance of the film. A range of analytical techniques, including scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS), were employed to systematically analyse the initial graphene materials as well as the nanocomposite films. Electrical measurements indicated that the sheet resistance of the films was affected by the properties of the graphene flakes used. To further explore the composition of the films, ToF-SIMS mapping was employed and provided a direct means to elucidate the nature of the graphene dispersion in the films and to correlate this with the electrical analysis. These results reveal important implications for how the dispersion of the graphene material in films produced from printable inks can be affected by the type of graphene powder used and the corresponding effect on electrical performance of the nanocomposites. This work provides direct evidence for how accurate and comparable characterisation of the graphene material is required for real-world graphene materials to develop graphene enabled films and proposes a measurement protocol for comparing graphene materials that can be used for international

Continuous Reduced Graphene Oxide Film Prepared by Stitching of Nanosheets at the Interface of Two Immiscible Solutions

International Nuclear Information System (INIS)

Sohn, Young Ku; Kim, Seog K.; Min, Bong Ki

2011-01-01

RGO sheets dispersed in water are prepared by chemical reduction of GO using ascorbic acid. By mixing and sonication of submicron-size RGO sheets in two immiscible liquids (e. g., chloroform and water) for the first time we have prepared a continuous large-area RGO film at the interface. In other words, we have shown that aggregated RGO sheets could be fully stretched at the interface to form a continuous film. The RGO film has been characterized by SEM, TEM, UV-vis absorption, XPS and Raman. The film exhibits high flexibility, transparency, and very long-term stability without forming aggregations. Without requiring vapor deposition, a special instrument, or a filtration followed by a removing the filter paper one could easily achieve a continuous RGO-film in any laboratories. Our solution-based method is much simpler and cost-effective, and very good for large scale mass production. This finding could boost real applications of graphene in laboratory and industry, and provide a new methodology for the fabrication of large-area continuous graphene films. Graphene, an atom-thick two-dimensional (2D) honeycomb lattice sheet of sp 2 -bonded carbon atoms, has recently been emerged as a new promising material in various fields. Because of its gigantic charge carrier mobility it could be applied to field-effect transistors as a substitute of silicon. Due to its transparency and high electrical conductivity, it could be used as a substitute of ITO electrode in solar cells and light-emitting diodes. Other superior properties include large surface area, flexibility, strength, stiffness, and thermal conductivity. These provides wide applications of graphene including supercapa-citor, battery, sensor, storage and drug delivery. For real applications, large-scale of graphene sheets or films needs to be prepared. Large-area (orders of centimeters) graphene films have recently been fabricated using a chemical vapor deposition (CVD) method on various metal substrates. This

Efficient transfer of large-area graphene films onto rigid substrates by hot pressing.

Science.gov (United States)

Kang, Junmo; Hwang, Soonhwi; Kim, Jae Hwan; Kim, Min Hyeok; Ryu, Jaechul; Seo, Sang Jae; Hong, Byung Hee; Kim, Moon Ki; Choi, Jae-Boong

2012-06-26

Graphene films grown on metal substrates by chemical vapor deposition (CVD) method have to be safely transferred onto desired substrates for further applications. Recently, a roll-to-roll (R2R) method has been developed for large-area transfer, which is particularly efficient for flexible target substrates. However, in the case of rigid substrates such as glass or wafers, the roll-based method is found to induce considerable mechanical damages on graphene films during the transfer process, resulting in the degradation of electrical property. Here we introduce an improved dry transfer technique based on a hot-pressing method that can minimize damage on graphene by neutralizing mechanical stress. Thus, we enhanced the transfer efficiency of the large-area graphene films on a substrate with arbitrary thickness and rigidity, evidenced by scanning electron microscope (SEM) and atomic force microscope (AFM) images, Raman spectra, and various electrical characterizations. We also performed a theoretical multiscale simulation from continuum to atomic level to compare the mechanical stresses caused by the R2R and the hot-pressing methods, which also supports our conclusion. Consequently, we believe that the proposed hot-pressing method will be immediately useful for display and solar cell applications that currently require rigid and large substrates.

Stable Nafion-functionalized graphene dispersions for transparent conducting films

International Nuclear Information System (INIS)

Liu Yangqiao; Gao Lian; Sun Jing; Wang Yan; Zhang Jing

2009-01-01

Nafion was used for the first time to aid in preparing stable graphene dispersions in mixed water/ethanol (1:1) solvents via the reduction of graphite oxide using hydrazine. The dispersion was characterized by ultraviolet-visible (UV-vis) spectra, transmission electron microscopy, zeta potential analysis, etc. It was found that for Nafion-to-graphene ratios higher than 5:1, graphene solutions with concentrations up to 1 mg ml -1 and stabilities of over three months were obtained. It was proposed that the Nafion adsorbed onto the graphene by the hydrophobic interaction of its fluoro-backbones with the graphene layer and imparted stability by an electrosteric mechanism. Furthermore, transparent and conductive films were prepared using these highly stable Nafion-stabilized graphene dispersions. The prepared Nafion-graphene films possess smooth and homogeneous surfaces and the sheet resistance was as low as 30 kΩ/sq for a transmittance of 80% at 550 nm, which was much lower than for other graphene films obtained by chemical reduction. X-ray photoelectron spectroscopy and Raman spectroscopy confirmed the p-doping of the graphene by Nafion. It was expected that this p-doping effect, as well as the high dispersing ability of Nafion for graphene and the connection of the sp 2 domains by residual Nafion combined to produce good properties of the Nafion-graphene films.

Sandwich-Architectured Poly(lactic acid)-Graphene Composite Food Packaging Films.

Science.gov (United States)

Goh, Kunli; Heising, Jenneke K; Yuan, Yang; Karahan, Huseyin E; Wei, Li; Zhai, Shengli; Koh, Jia-Xuan; Htin, Nanda M; Zhang, Feimo; Wang, Rong; Fane, Anthony G; Dekker, Matthijs; Dehghani, Fariba; Chen, Yuan

2016-04-20

Biodegradable food packaging promises a more sustainable future. Among the many different biopolymers used, poly(lactic acid) (PLA) possesses the good mechanical property and cost-effectiveness necessary of a biodegradable food packaging. However, PLA food packaging suffers from poor water vapor and oxygen barrier properties compared to many petroleum-derived ones. A key challenge is, therefore, to simultaneously enhance both the water vapor and oxygen barrier properties of the PLA food packaging. To address this issue, we design a sandwich-architectured PLA-graphene composite film, which utilizes an impermeable reduced graphene oxide (rGO) as the core barrier and commercial PLA films as the outer protective encapsulation. The synergy between the barrier and the protective encapsulation results in a significant 87.6% reduction in the water vapor permeability. At the same time, the oxygen permeability is reduced by two orders of magnitude when evaluated under both dry and humid conditions. The excellent barrier properties can be attributed to the compact lamellar microstructure and the hydrophobicity of the rGO core barrier. Mechanistic analysis shows that the large rGO lateral dimension and the small interlayer spacing between the rGO sheets have created an extensive and tortuous diffusion pathway, which is up to 1450-times the thickness of the rGO barrier. In addition, the sandwiched architecture has imbued the PLA-rGO composite film with good processability, which increases the manageability of the film and its competency to be tailored. Simulations using the PLA-rGO composite food packaging film for edible oil and potato chips also exhibit at least eight-fold extension in the shelf life of these oxygen and moisture sensitive food products. Overall, these qualities have demonstrated the high potential of a sandwich-architectured PLA-graphene composite film for food packaging applications.

Large-area self-assembled reduced graphene oxide/electrochemically exfoliated graphene hybrid films for transparent electrothermal heaters

Science.gov (United States)

Sun, Hongyan; Chen, Ding; Ye, Chen; Li, Xinming; Dai, Dan; Yuan, Qilong; Chee, Kuan W. A.; Zhao, Pei; Jiang, Nan; Lin, Cheng-Te

2018-03-01

Graphene shows great promise as a high-efficiency electrothermal film for flexible transparent defoggers/defrosters. However, it remains a great challenge to achieve a good balance between the production cost and the properties of graphene films. Here, we proposed a cost-effective self-assembly method to fabricate high-performance, large-area graphene oxide/electrochemically exfoliated graphene hybrid films for heater applications. The self-assembled graphene hybrid films with the area of 20 × 20 cm2 could be transferred onto arbitrary substrates with nonplanar surfaces and simply patterned with the hard mask. After reduction by hydrogen iodide vapor followed by 800 °C thermal treatment, the hybrid films with the transmittance of 76.2% exhibit good heating characteristics and defogging performance, which reach a saturation temperature of up to 127.5 °C when 40 V was applied for 60 s.

Thickness-Dependent Strain Effect on the Deformation of the Graphene-Encapsulated Au Nanoparticles

Directory of Open Access Journals (Sweden)

Shuangli Ye

2014-01-01

Full Text Available The strain effect on graphene-encapsulated Au nanoparticles is investigated. A finite-element calculation is performed to simulate the strain distribution and morphology of the monolayer and multilayer graphene-encapsulated Au nanoparticles, respectively. It can be found that the inhomogeneous strain and deformation are enhanced with the increasing shrinkage of the graphene shell. Moreover, the strain distribution and deformation are very sensitive to the layer number of the graphene shell. Especially, the inhomogeneous strain at the interface between the graphene shell and encapsulated Au nanoparticles is strongly tuned by the graphene thickness. For the mono- and bilayer graphene-encapsulated Au nanoparticles, the dramatic shape transformation can be observed. However, with increasing the graphene thickness further, there is hardly deformation for the encapsulated Au nanoparticles. These simulated results indicate that the strain and deformation can be designed by the graphene layer thickness, which provides an opportunity to engineer the structure and morphology of the graphene-encapsulated nanoparticles.

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

Science.gov (United States)

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

Lubricating graphene with a nanometer-thick perfluoropolyether

International Nuclear Information System (INIS)

Kozbial, Andrew; Li, Zhiting; Iasella, Steven; Taylor, Alexander T.; Morganstein, Brittni; Wang, Yongjin; Sun, Jianing; Zhou, Bo; Randall, Nicholas X.; Liu, Haitao; Li, Lei

2013-01-01

Due to its atomic thickness (thinness), the wear of graphene in nanoscale devices or as a protective coating is a serious concern. It is highly desirable to develop effective methods to reduce the wear of graphene. In the current paper, the effect of a nano-lubricant, perfluoropolyether, on the wear of graphene on different substrates is investigated. Graphene was synthesized by chemical vapor deposition (CVD) and characterized by Raman spectroscopy. The nano-lubricant is applied on the graphene by dip-coating. The friction and wear of graphene samples are characterized by nanotribometer, AFM, optical microscopy and Raman spectroscopy. The results showed that lubricating silicon/graphene with nano-lubricant reduces the friction but increases the wear. However, lubricating nickel/graphene with nano-lubricant has little effect on the friction but reduce the wear significantly. The underlying mechanism has been discussed on the basis of the graphene–substrate adhesion and the roughness. The current study provides guidance to the future design of graphene-containing devices. - Highlights: • The effect of a nano-lubricant on the friction and wear of CVD graphene was studied. • Lubricating Graphene/Si results in lower friction but higher wear. • Lubricating Ggraphene/Ni results in lower wear but unchanged friction. • The mechanisms were discussed based on the roughness and interfacial adhesion

Transparent Conducting Graphene Hybrid Films To Improve Electromagnetic Interference (EMI) Shielding Performance of Graphene.

Science.gov (United States)

Ma, Limin; Lu, Zhengang; Tan, Jiubin; Liu, Jian; Ding, Xuemei; Black, Nicola; Li, Tianyi; Gallop, John; Hao, Ling

2017-10-04

Conducting graphene-based hybrids have attracted considerable attention in recent years for their scientific and technological significance in many applications. In this work, conductive graphene hybrid films, consisting of a metallic network fully encapsulated between monolayer graphene and quartz-glass substrate, were fabricated and characterized for their electromagnetic interference shielding capabilities. Experimental results show that by integration with a metallic network the sheet resistance of graphene was significantly suppressed from 813.27 to 5.53 Ω/sq with an optical transmittance at 91%. Consequently, the microwave shielding effectiveness (SE) exceeded 23.60 dB at the K u -band and 13.48 dB at the K a -band. The maximum SE value was 28.91 dB at 12 GHz. Compared with the SE of pristine monolayer graphene (3.46 dB), the SE of graphene hybrid film was enhanced by 25.45 dB (99.7% energy attenuation). At 94% optical transmittance, the sheet resistance was 20.67 Ω/sq and the maximum SE value was 20.86 dB at 12 GHz. Our results show that hybrid graphene films incorporate both high conductivity and superior electromagnetic shielding comparable to existing ITO shielding modalities. The combination of high conductivity and shielding along with the materials' earth-abundant nature, and facile large-scale fabrication, make these graphene hybrid films highly attractive for transparent EMI shielding.

The Impact of Graphene on the Fabrication of Thin Film Solar Cells: Current Status and Future Prospects

Directory of Open Access Journals (Sweden)

Zhengqi Shi

2017-12-01

Full Text Available Commercial solar cells have a power conversion efficiency (PCE in the range of 10–22% with different light absorbers. Graphene, with demonstrated unique structural, physical, and electrical properties, is expected to bring the positive effects on the development of thin film solar cells. Investigations have been carried out to understand whether graphene can be used as a front and back contacts and active interfacial layer in solar cell fabrication. In this review, the current progress of this research is analyzed, starting from the graphene and graphene-based Schottky diode. Also, the discussion was focused on the progress of graphene-incorporated thin film solar cells that were fabricated with different light absorbers, in particular, the synthesis, fabrication, and characterization of devices. The effect of doping and layer thickness of graphene on PCE was also included. Currently, the PCE of graphene-incorporated bulk-heterojunction devices have enhanced in the range of 0.5–3%. However, device durability and cost-effectiveness are also the challenging factors for commercial production of graphene-incorporated solar cells. In addition to the application of graphene, graphene oxides have been also used in perovskite solar cells. The current needs and likely future investigations for graphene-incorporated solar cells are also discussed.

Effect of Graphene-EC on Ag NW-Based Transparent Film Heaters: Optimizing the Stability and Heat Dispersion of Films.

Science.gov (United States)

Cao, Minghui; Wang, Minqiang; Li, Le; Qiu, Hengwei; Yang, Zhi

2018-01-10

To optimize the performance of silver nanowire (Ag NW) film heaters and explore the effect of graphene on a film, we introduced poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) and graphene modified with ethyl cellulose (graphene-EC) into the film. The high-quality and well-dispersed graphene-EC was synthesized from graphene obtained by electrochemical exfoliation as a precursor. The transparent film heaters were fabricated via spin-coating. With the assistance of graphene-EC, the stability of film heaters was greatly improved, and the conductivity was optimized by adjusting the Ag NW concentration. The film heaters exhibited a fast and accurate response to voltage, accompanied by excellent environmental endurance, and there was no significant performance degradation after being operated for a long period of time. These results indicate that graphene-EC plays a crucial role in optimizing film stability and heat dispersion in the film. The Ag NW/PEDOT:PSS-doped graphene-EC film heaters show a great potential in low-cost indium-tin-oxide-free flexible transparent electrodes, heating systems, and transparent film heaters.

VOx effectively doping CVD-graphene for transparent conductive films

Science.gov (United States)

Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

2016-11-01

Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Non-vacuum growth of graphene films using solid carbon source

International Nuclear Information System (INIS)

Nguyen, Ba-Son; Lin, Jen-Fin; Perng, Dung-Ching

2015-01-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO 2 capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications

Correlating defect density with growth time in continuous graphene films.

Science.gov (United States)

Kang, Cheong; Jung, Da Hee; Nam, Ji Eun; Lee, Jin Seok

2014-12-01

We report that graphene flakes and films which were synthesized by copper-catalyzed atmospheric pressure chemical vapor deposition (APCVD) method using a mixture of Ar, H2, and CH4 gases. It was found that variations in the reaction parameters, such as reaction temperature, annealing time, and growth time, influenced the domain size of as-grown graphene. Besides, the reaction parameters influenced the number of layers, degree of defects and uniformity of the graphene films. The increase in growth temperature and annealing time tends to accelerate the graphene growth rate and increase the diffusion length, respectively, thereby increasing the average size of graphene domains. In addition, we confirmed that the number of pinholes reduced with increase in the growth time. Micro-Raman analysis of the as-grown graphene films confirmed that the continuous graphene monolayer film with low defects and high uniformity could be obtained with prolonged reaction time, under the appropriate annealing time and growth temperature.

Non-vacuum growth of graphene films using solid carbon source

Energy Technology Data Exchange (ETDEWEB)

Nguyen, Ba-Son [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Faculty of Mechatronics – Electronics, Lac Hong University, 10 Huynh Van Nghe Road, Bienhoa (Viet Nam); Lin, Jen-Fin, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Department of Mechanical Engineering, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Perng, Dung-Ching, E-mail: jflin@mail.ncku.edu.tw, E-mail: dcperng@ee.ncku.edu.tw [Center for Micro/Nano Science and Technology, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China); Institute of Microelectronics and Electrical Engineering Department, National Cheng Kung University, 1 University Road, Tainan 701, Taiwan (China)

2015-06-01

This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10 °C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

Optical and magnetic properties of porous graphene films produced by electrospraying

International Nuclear Information System (INIS)

Zhao, Jun; Yang, Shan-Shan; Chen, Li-Qing; Zhang, Zhao-Chun; Zheng, Hou-Li

2013-01-01

Graphene films have been produced by electrospraying on SiO 2 -coated silicon substrate and subsequent heat treatment, offering a simple and typical method to produce porous graphene films and exhibiting a good adhesion to silicon substrate. The microstructures of as-prepared graphene films were characterized by field emission scanning electron microscopy, transmission electron microscopy, selected area electron diffraction and atomic force microscopy. X-ray photoelectron spectroscopy, infrared spectroscopy and Raman spectroscopy further confirmed the formation of porous graphene films. Moreover, the reflection spectrum of as-prepared graphene films was studied by ultraviolet–visible spectroscopy, revealing that light absorption played dominant roles at 375 and 635 nm, respectively. Finally, the resistance and magnetoresistance were measured, and some preliminary theoretical explanations were proposed. - Highlights: ► Porous graphene films were produced by electrospraying. ► Light absorption plays dominant roles at 375 and 635 nm. ► A negative magnetoresistance is emerged at low temperature. ► A 2D weak localization effect arises from random stacking of graphene

Clean graphene electrodes on organic thin-film devices via orthogonal fluorinated chemistry.

Science.gov (United States)

Beck, Jonathan H; Barton, Robert A; Cox, Marshall P; Alexandrou, Konstantinos; Petrone, Nicholas; Olivieri, Giorgia; Yang, Shyuan; Hone, James; Kymissis, Ioannis

2015-04-08

Graphene is a promising flexible, highly transparent, and elementally abundant electrode for organic electronics. Typical methods utilized to transfer large-area films of graphene synthesized by chemical vapor deposition on metal catalysts are not compatible with organic thin-films, limiting the integration of graphene into organic optoelectronic devices. This article describes a graphene transfer process onto chemically sensitive organic semiconductor thin-films. The process incorporates an elastomeric stamp with a fluorinated polymer release layer that can be removed, post-transfer, via a fluorinated solvent; neither fluorinated material adversely affects the organic semiconductor materials. We used Raman spectroscopy, atomic force microscopy, and scanning electron microscopy to show that chemical vapor deposition graphene can be successfully transferred without inducing defects in the graphene film. To demonstrate our transfer method's compatibility with organic semiconductors, we fabricate three classes of organic thin-film devices: graphene field effect transistors without additional cleaning processes, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices. These experiments demonstrate the potential of hybrid graphene/organic devices in which graphene is deposited directly onto underlying organic thin-film structures.

Hydrophobic and optical characteristics of graphene and graphene oxide films transferred onto functionalized silica particles deposited glass surface

Science.gov (United States)

Yilbas, B. S.; Ibrahim, A.; Ali, H.; Khaled, M.; Laoui, T.

2018-06-01

Hydrophobic and optical transmittance characteristics of the functionalized silica particles on the glass surface prior and after transfer of graphene and graphene oxide films on the surface are examined. Nano-size silica particles are synthesized and functionalized via chemical grafting and deposited onto a glass surface. Graphene film, grown on copper substrate, was transferred onto the functionalized silica particles surface through direct fishing method. Graphene oxide layer was deposited onto the functionalized silica particles surface via spin coating technique. Morphological, hydrophobic, and optical characteristics of the functionalized silica particles deposited surface prior and after graphene and graphene oxide films transfer are examined using the analytical tools. It is found that the functionalized silica particles are agglomerated at the surface forming packed structures with few micro/nano size pores. This arrangement gives rise to water droplet contact angle and contact angle hysteresis in the order of 163° and 2°, respectively, and remains almost uniform over the entire surface. Transferring graphene and depositing graphene oxide films over the functionalized silica particles surface lowers the water droplet contact angle slightly (157-160°) and increases the contact angle hysteresis (4°). The addition of the graphene and graphene oxide films onto the surface of the deposited functionalized silica particles improves the optical transmittance.

Preparation of Composited Graphene/PEDOT:PSS Film for Its Possible Application in Graphene-based Organic Solar Cells

Institute of Scientific and Technical Information of China (English)

YU; Yue; LI; Meicheng; CHU; Lihua; YU; Hakki; Wodtke; A.M.; ZHAO; Yan; ZHANG; Zhongmo

2015-01-01

The interface between graphene and organic layers is a key factor responsible for the performance of graphene-based organic solar cells(OSCs). In this paper, we focus on coating PEDOT:PSS onto the surface of graphene. We demonstrate two approaches, applying UV/Ozone treatment on graphene and modifying PEDOT:PSS with Zonyl, to get a PEDOT:PSS well-coated graphene film. Our results prove that both methods can be effective to solve the interface issue between graphene and PEDOT: PSS. Thereby it shows a positive application of the composited graphene/PEDOT:PSS film on graphene-based OSCs.

Epitaxially grown strained pentacene thin film on graphene membrane.

Science.gov (United States)

Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

2015-05-06

Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

International Nuclear Information System (INIS)

Fan Tian-Ju; Yuan Chun-Qiu; Tang Wei; Tong Song-Zhao; Huang Wei; Min Yong-Gang; Liu Yi-Dong; Epstein, Arthur J.

2015-01-01

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO 3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476 Ω/sq and transmittance of 76% at 550 nm (6 layers). The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens. (paper)

Characterizations of photoconductivity of graphene oxide thin films

Directory of Open Access Journals (Sweden)

Shiang-Kuo Chang-Jian

2012-06-01

Full Text Available Characterizations of photoresponse of a graphene oxide (GO thin film to a near infrared laser light were studied. Results showed the photocurrent in the GO thin film was cathodic, always flowing in an opposite direction to the initial current generated by the preset bias voltage that shows a fundamental discrepancy from the photocurrent in the reduced graphene oxide thin film. Light illumination on the GO thin film thus results in more free electrons that offset the initial current. By examining GO thin films reduced at different temperatures, the critical temperature for reversing the photocurrent from cathodic to anodic was found around 187°C. The dynamic photoresponse for the GO thin film was further characterized through the response time constants within the laser on and off durations, denoted as τon and τoff, respectively. τon for the GO thin film was comparable to the other carbon-based thin films such as carbon nanotubes and graphenes. τoff was, however, much larger than that of the other's. This discrepancy was attributable to the retardation of exciton recombination rate thanks to the existing oxygen functional groups and defects in the GO thin films.

Synthesis and electrical characterization of Graphene Oxide films

International Nuclear Information System (INIS)

Yasin, Muhammad; Tauqeer, T.; Zaidi, Syed M.H.; San, Sait E.; Mahmood, Asad; Köse, Muhammet E.; Canimkurbey, Betul; Okutan, Mustafa

2015-01-01

In this work, we have synthesized Graphene Oxide (GO) using modified Hummers method and investigated its electrical properties using parallel plate impedance spectroscopic technique. Graphene Oxide films were prepared using drop casting method on Indium Tin Oxide (ITO) coated glass substrate. Atomic force microscopy was used to characterize the films' microstructure and surface topography. Electrical characterization was carried out using LCR meter in frequency regime (100 Hz to 10 MHz) at different temperatures. AC conductivity σ ac of the films was observed to be varied with angular frequency, ω as ω S , with S < 1. The electrical properties of GO were found to be both frequency and temperature dependent. Analysis showed that GO film contains direct current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Photon absorption and transmittance capability in the visible range and excellent electrical parameters of solution processed Graphene Oxide suggest its suitability for the realization of low cost flexible organic solar cells and organic Thin Film Transistors, respectively. - Highlights: • Synthesize and electrical characterization of Graphene Oxide (GO) Film was undertaken. • Temperature dependent impedance spectroscopy was used for electrical analysis. • AFM was used to characterize films' microstructure and surface topography. • Electrical parameters were found to vary with both temperature and frequency. • GO showed DC and CBH conductivity mechanisms at low and high frequency, respectively

Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

Science.gov (United States)

Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

2012-02-01

In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

Photoinduced hydrophobic surface of graphene oxide thin films

International Nuclear Information System (INIS)

Zhang Xiaoyan; Song Peng; Cui Xiaoli

2012-01-01

Graphene oxide (GO) thin films were deposited on transparent conducting oxide substrates and glass slides by spin coating method at room temperature. The wettability of GO thin films before and after ultraviolet (UV) irradiation was characterized with water contact angles, which increased from 27.3° to 57.6° after 3 h of irradiation, indicating a photo-induced hydrophobic surface. The UV–vis absorption spectra, Raman spectroscopy, X-ray photoelectron spectroscopy, and conductivity measurements of GO films before and after UV irradiation were taken to study the mechanism of photoinduced hydrophobic surface of GO thin films. It is demonstrated that the photoinduced hydrophobic surface is ascribed to the elimination of oxygen-containing functional groups on GO molecules. This work provides a simple strategy to control the wettability properties of GO thin films by UV irradiation. - Highlights: ► Photoinduced hydrophobic surface of graphene oxide thin films has been demonstrated. ► Elimination of oxygen-containing functional groups in graphene oxide achieved by UV irradiation. ► We provide novel strategy to control surface wettability of GO thin films by UV irradiation.

Electromagnetic Properties of Graphene-like Films in Ka-Band

Directory of Open Access Journals (Sweden)

Sofia Voronovich

2014-05-01

Full Text Available We studied electromagnetic properties of pyrolytic carbon (PyC films with thicknesses from 9 nm to 110 nm. The PyC films consisted of randomly oriented and intertwined graphene flakes with a typical size of a few nanometers were synthesized by chemical vapor deposition (CVD at 1100 °C on a quartz substrate. The reflectance and transmittance of these films in Ka-band, 26–37 GHz, were studied both experimentally and theoretically. The discovered remarkably high absorption loss of up to 50% of incident power, along with chemical stability, makes PyC films attractive for electromagnetic (EM interference shielding in space and airspace communication systems, as well as in portable electronic devices occupying this frequency slot. Since, in practical applications, the PyC film should be employed for coating of dielectric surfaces, two important issues to be addressed are: (i which side (front or back of the substrate should be covered to ensure maximum absorption losses; and (ii the frequency dependence of absorbance/transmittance/reflectance of binary PyC/quartz structures in the Ka-band.

Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

Science.gov (United States)

Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

2018-05-01

Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

The Preparation and Property of Graphene /Tin Oxide Transparent Conductive Film

Directory of Open Access Journals (Sweden)

SUN Tao

2017-02-01

Full Text Available Graphene doped tin oxide composites were prepared with SnCIZ·2HZ 0 and graphene oxide as raw materials with sol-gel method and then spincoated on the quartz glass to manufacture a new transparent conductive film. The composite film was characterized with X-ray diffraction(XRDand scanning electron microscopy(SEM analysis. XRD results show that the graphene oxide was successfully prepared with Hummers method. The graphene layers and particulate SnOZ can be clearly observed in SEM photos. The transmittance and conductivity of the thin films were tested with ultraviolet visible spectrophotometer and Hall effect measurement. The results show that the transmittivity of composite film in visible region is more than 90% and surface square resistance is 41 S2/口.The graphene/ SnOZ film exhibits a higher performance in transparence and conductivity than commercial FTO glass.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

Science.gov (United States)

Li, Na; Chen, Fei; Shen, Qiang; Wang, Chuanbin; Zhang, Lianmeng

2013-03-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Fabrication of ATO/Graphene Multi-layered Transparent Conducting Thin Films

International Nuclear Information System (INIS)

Li Na; Chen Fei; Shen Qiang; Wang Chuanbin; Zhang Lianmeng

2013-01-01

A novel transparent conducting oxide based on the ATO/graphene multi-layered thin films has been developed to satisfy the application of transparent conductive electrode in solar cells. The ATO thin films are prepared by pulsed laser deposition method with high quality, namely the sheet resistance of 49.5 Ω/sq and average transmittance of 81.9 %. The prepared graphene sheet is well reduced and shows atomically thin, spotty distributed appearance on the top of the ATO thin films. The XRD and optical micrographs are used to confirm the successfully preparation of the ATO/graphene multi-layered thin films. The Hall measurements and UV-Vis spectrophotometer are conducted to evaluate the sheet resistance and optical transmittance of the innovative structure. It is found that graphene can improve the electrical properties of the ATO thin films with little influence on the optical transmittance.

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

Science.gov (United States)

Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

2015-09-14

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Antibacterial activity of large-area monolayer graphene film manipulated by charge transfer.

Science.gov (United States)

Li, Jinhua; Wang, Gang; Zhu, Hongqin; Zhang, Miao; Zheng, Xiaohu; Di, Zengfeng; Liu, Xuanyong; Wang, Xi

2014-03-12

Graphene has attracted increasing attention for potential applications in biotechnology due to its excellent electronic property and biocompatibility. Here we use both Gram-positive Staphylococcus aureus (S. aureus) and Gram-negative Escherichia coli (E. coli) to investigate the antibacterial actions of large-area monolayer graphene film on conductor Cu, semiconductor Ge and insulator SiO2. The results show that the graphene films on Cu and Ge can surprisingly inhibit the growth of both bacteria, especially the former. However, the proliferation of both bacteria cannot be significantly restricted by the graphene film on SiO2. The morphology of S. aureus and E. coli on graphene films further confirms that the direct contact of both bacteria with graphene on Cu and Ge can cause membrane damage and destroy membrane integrity, while no evident membrane destruction is induced by graphene on SiO2. From the viewpoint of charge transfer, a plausible mechanism is proposed here to explain this phenomenon. This study may provide new insights for the better understanding of antibacterial actions of graphene film and for the better designing of graphene-based antibiotics or other biomedical applications.

Preparation of Composited Graphene/PEDOT:PSS Film for Its Possible Application in Graphene-based Organic Solar Cells

Institute of Scientific and Technical Information of China (English)

YU Yue; LI Meicheng; CHU Lihua; YU Hakki; Wodtke A M; ZHAO Yan; ZHANG Zhongmo

2015-01-01

The interface between graphene and organic layers is a key factor responsible for the performance of gra-phene-based organic solar cells (OSCs). In this paper, we focus on coating PEDOT:PSS onto the surface of graphene. We demonstrate two approaches, applying UV/Ozone treatment on graphene and modifying PEDOT:PSS with Zonyl, to get a PEDOT:PSS well-coated graphene film . Our results prove that both methods can be effective to solve the interface issue between graphene and PEDOT: PSS. Thereby it shows a positive application of the composited gra-phene/PEDOT:PSS film on graphene-based OSCs.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

International Nuclear Information System (INIS)

Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

2016-01-01

The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

Barrier Performance of CVD Graphene Films Using a Facile P3HT Thin Film Optical Transmission Test

Directory of Open Access Journals (Sweden)

Srinivasa Kartik Nemani

2018-01-01

Full Text Available The barrier performance of CVD graphene films was determined using a poly(3-hexylthiophene (P3HT thin film optical transmission test. P3HT is a semiconducting polymer that photo-oxidatively degrades upon exposure to oxygen and light. The polymer is stable under ambient conditions and indoor lighting, enabling P3HT films to be deposited and encapsulated in air. P3HT’s stability under ambient conditions makes it desirable for an initial evaluation of barrier materials as a complimentary screening method in combination with conventional barrier tests. The P3HT test was used to demonstrate improved barrier performance for polymer substrates after addition of CVD graphene films. A layer-by-layer transfer method was utilized to enhance the barrier performance of monolayer graphene. Another set of absorption measurements were conducted to demonstrate the barrier performance of graphene and the degradation mechanism of graphene/P3HT over multiple wavelengths from 400 to 800 nm. The absorption spectra for graphene/polymer composite were simulated by solving Fresnel equations. The simulation results were found to be in good agreement with the measured absorption spectra. The P3HT degradation results qualitatively indicate the potential of graphene films as a possible candidate for medium performance barriers.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.

2013-01-09

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

Graphene-based LbL deposited films: further study of electrical and gas sensing properties

Directory of Open Access Journals (Sweden)

Nabok A.

2017-01-01

Full Text Available Graphene-surfactant composite materials obtained by the ultrasonic exfoliation of graphite powder in the presence of ionic surfactants (either CTAB or SDS were utilised to construct thin films using layer-by-layer (LbL electrostatic deposition technique. A series of graphene-based thin films were made by alternating layers of either graphene-SDS with polycations (PEI or PAH or graphene-CTAB with polyanions (PSS. Also, graphene-phthalocyanine composite films were produced by alternating layers of graphene-CTAB with tetrasulfonated nickel phthalocyanine. Graphene-surfactant LbL films exhibited good electric conductivity (about 0.1 S/cm of semiconductor type with a band gap of about 20 meV. Judging from UV-vis spectra measurements, graphene-phthalocyanine LbL films appeared to form joint π-electron system. Gas sensing testing of such composite films combining high conductivity of graphene with the gas sensing abilities of phthalocyanines showed substantial changes (up to 10% in electrical conductivity upon exposure to electro-active gases such as HCl and NH3.

Modification of graphene oxide films by radiofrequency N2 plasma

Science.gov (United States)

Neustroev, E. P.; Burtseva, E. K.; Soloviev, B. D.; Prokopiev, A. R.; Popov, V. I.; Timofeev, V. B.

2018-04-01

The effect of treatment in nitrogen plasma on the properties of partially reduced graphene oxide (rGO) was studied. A comparison is made between two different sample locations in the reaction chamber. It is shown that in the case when rGO films were turned towards the inductor of the plasma system, the etching rate is much higher. Effective nitrogen functionalization of rGO was established in the second position, when the rGO films were turned in the opposite direction. In this case, the nitrogen content increases to 5 at% of the initial value. The change in the current-voltage characteristics is observed under illumination, which is independent of the wavelength. On and off daylight changes the resistance to 30% of the initial value. The magnitude of the photocurrent increases depending on the applied voltage. The effect is most noticeable for thin rGO films 10-15 nm in thickness.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei

2013-03-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

Hydroxylated graphene-based flexible carbon film with ultrahigh electrical and thermal conductivity.

Science.gov (United States)

Ding, Jiheng; Ur Rahman, Obaid; Zhao, Hongran; Peng, Wanjun; Dou, Huimin; Chen, Hao; Yu, Haibin

2017-09-29

Graphene-based films are widely used in the electronics industry. Here, surface hydroxylated graphene sheets (HGS) have been synthesized from natural graphite (NG) by a rapid and efficient molten hydroxide-assisted exfoliation technique. This method enables preparation of aqueous dispersible graphene sheets with a high dispersed concentration (∼10.0 mg ml -1 ) and an extraordinary production yield (∼100%). The HGS dispersion was processed into graphene flexible film (HGCF) through fast filtration, annealing treatment and mechanical compression. The HGS endows graphene flexible film with a high electrical conductivity of 11.5 × 10 4 S m -1 and a superior thermal conductivity of 1842 W m -1 K -1 . Simultaneously, the superflexible HGCF could endure 3000 repeated cycles of bending or folding. As a result, this graphene flexible film is expected to be integrated into electronic packaging and high-power electronics applications.

Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

International Nuclear Information System (INIS)

Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

2014-01-01

A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10 −4 to 1.2×10 −3 M with the detect limit of 5×10 −6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept electroactivity in

Synthesis of graphene by MEVVA source ion implantation

International Nuclear Information System (INIS)

Ying, J.J.; Xiao, X.H.; Dai, Z.G.; Wu, W.; Li, W.Q.; Mei, F.; Cai, G.X.; Ren, F.; Jiang, C.Z.

2013-01-01

Ion implantation provides a new synthesis route for graphene, and few-layered graphene synthesis by ion implantation has been reported. Here we show the synthesis of a single layer of high-quality graphene by Metal Vapor Vacuum Arc (MEVVA) source ion implantation. Polycrystalline nickel and copper thin films are implanted with MEVVA source carbon ions at 40 kV, followed by high-temperature thermal annealing and quenching. A Raman spectrum is applied to probe the quality and thickness of the prepared graphene. A single layer of high-quality graphene is grown on the nickel films, but not on the copper films. The growth mechanisms on the nickel and copper films are explained. MEVVA source ion implantation has been widely applied in industrial applications, demonstrating that this synthesis method can be generalized for industrial production

Wetting of water on graphene nanopowders of different thicknesses

Science.gov (United States)

Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Belyaeva, Liubov A.; Schneider, Grégory F.; Bonn, Daniel

2018-04-01

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. "Liquid marble" tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated "wetting transparency" of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Wetting of water on graphene nanopowders of different thicknesses

KAUST Repository

Bera, Bijoyendra; Shahidzadeh, Noushine; Mishra, Himanshu; Belyaeva, Liubov A.; Schneider, Gré gory F.; Bonn, Daniel

2018-01-01

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. “Liquid marble” tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated “wetting transparency” of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Wetting of water on graphene nanopowders of different thicknesses

KAUST Repository

Bera, Bijoyendra

2018-04-12

We study the wetting of graphene nanopowders by measuring the water adsorption in nanopowder flakes of different flake thicknesses. Chemical analysis shows that the graphene flakes, especially the thin ones, might exist in the partially oxidized state. We observe that the thinnest graphene nanopowder flakes do not adsorb water at all, independent of the relative humidity. Thicker flakes, on the other hand, do adsorb an increasing amount of water with increasing humidity. This allows us to assess their wetting behavior which is actually the result of the competition between the adhesive interactions of water and graphene and the cohesive interactions of water. Explicit calculation of these contributions from the van der Waals interactions confirms that the adhesive interactions between very thin flakes of graphene oxide and water are extremely weak, which makes the flakes superhydrophobic. “Liquid marble” tests with graphene nanopowder flakes confirm the superhydrophobicity. This shows that the origin of the much debated “wetting transparency” of graphene is due to the fact that a single graphene or graphene oxide layer does not contribute significantly to the adhesion between a wetting phase and the substrate.

Study of film graphene/graphene oxide obtained by partial reduction chemical of oxide graphite; Estudo de filme de grafeno/oxido de grafeno obtido por reducao quimica parcial do oxido de grafite

Energy Technology Data Exchange (ETDEWEB)

Gascho, J.L.S.; Costa, S.F.; Hoepfner, J.C.; Pezzin, S.H., E-mail: juliagascho@hotmail.com [Universidade do Estado de Santa Catarina (UDESC), Joinville, SC (Brazil). Programa de Pos-Graduacao em Ciencia e Engenharia de Materiais

2014-07-01

This study investigated the morphology of graphene/graphene oxide film obtained by partial chemical reduction of graphite oxide (OG) as well as its resistance to solvents. Films of graphene/graphene oxide are great candidates for replacement of indium oxide doped with tin (ITO) in photoelectric devices. The OG was obtained from natural graphite, by Hummer's method modified, and its reduction is made by using sodium borohydride. Infrared spectroscopy analysis of Fourier transform (FTIR), Xray diffraction (XRD) and scanning electron microscopy, high-resolution (SEM/FEG) for the characterization of graphene/graphene oxide film obtained were performed. This film proved to be resilient, not dispersing in any of the various tested solvents (such as ethanol, acetone and THF), even under tip sonication, this resistance being an important property for the applications. Furthermore, the film had a morphology similar to that obtained by other preparation methods.(author)

Substrate considerations for graphene synthesis on thin copper films

International Nuclear Information System (INIS)

Howsare, Casey A; Robinson, Joshua A; Weng Xiaojun; Bojan, Vince; Snyder, David

2012-01-01

Chemical vapor deposition on copper substrates is a primary technique for synthesis of high quality graphene films over large areas. While well-developed processes are in place for catalytic growth of graphene on bulk copper substrates, chemical vapor deposition of graphene on thin films could provide a means for simplified device processing through the elimination of the layer transfer process. Recently, it was demonstrated that transfer-free growth and processing is possible on SiO 2 . However, the Cu/SiO 2 /Si material system must be stable at high temperatures for high quality transfer-free graphene. This study identifies the presence of interdiffusion at the Cu/SiO 2 interface and investigates the influence of metal (Ni, Cr, W) and insulating (Si 3 N 4 , Al 2 O 3 , HfO 2 ) diffusion barrier layers on Cu–SiO 2 interdiffusion, as well as graphene structural quality. Regardless of barrier choice, we find the presence of Cu diffusion into the silicon substrate as well as the presence of Cu–Si–O domains on the surface of the copper film. As a result, we investigate the choice of a sapphire substrate and present evidence that it is a robust substrate for synthesis and processing of high quality, transfer-free graphene. (paper)

Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

International Nuclear Information System (INIS)

Lee, Sung Sik; Kim, Young H.

2005-01-01

In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

Heterojunction Solar Cells Based on Silicon and Composite Films of Graphene Oxide and Carbon Nanotubes.

Science.gov (United States)

Yu, LePing; Tune, Daniel; Shearer, Cameron; Shapter, Joseph

2015-09-07

Graphene oxide (GO) sheets have been used as the surfactant to disperse single-walled carbon nanotubes (CNT) in water to prepare GO/CNT electrodes that are applied to silicon to form a heterojunction that can be used in solar cells. GO/CNT films with different ratios of the two components and with various thicknesses have been used as semitransparent electrodes, and the influence of both factors on the performance of the solar cell has been studied. The degradation rate of the GO/CNT-silicon devices under ambient conditions has also been explored. The influence of the film thickness on the device performance is related to the interplay of two competing factors, namely, sheet resistance and transmittance. CNTs help to improve the conductivity of the GO/CNT film, and GO is able to protect the silicon from oxidation in the atmosphere. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

VO{sub x} effectively doping CVD-graphene for transparent conductive films

Energy Technology Data Exchange (ETDEWEB)

Ji, Qinghua; Shi, Liangjing [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Qinghong [State Key Laboratory of Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620 (China); Wang, Weiqi; Zheng, Huifeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Yuzhi [The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Liu, Yangqiao, E-mail: yqliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Sun, Jing, E-mail: jingsun@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

2016-11-30

Highlights: • Doping process operated easily. • Sheet resistance decreased efficiently after doping. • Sheet resistance of doped graphene is stable after exposed in the air. • Mechanism of doping process is studied. - Abstract: Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VO{sub x} doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86–90%. The optimized VO{sub x}-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VO{sub x} can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VO{sub x} species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VO{sub x} doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Graphene and water-based elastomers thin-film composites by dip-moulding.

Science.gov (United States)

Iliut, Maria; Silva, Claudio; Herrick, Scott; McGlothlin, Mark; Vijayaraghavan, Aravind

2016-09-01

Thin-film elastomers (elastic polymers) have a number of technologically significant applications ranging from sportswear to medical devices. In this work, we demonstrate that graphene can be used to reinforce 20 micron thin elastomer films, resulting in over 50% increase in elastic modulus at a very low loading of 0.1 wt%, while also increasing the elongation to failure. This loading is below the percolation threshold for electrical conductivity. We demonstrate composites with both graphene oxide and reduced graphene oxide, the reduction being undertaken in-situ or ex-situ using a biocompatible reducing agent in ascorbic acid. The ultrathin films were cast by dip moulding. The transparency of the elastomer films allows us to use optical microscopy image and confirm the uniform distribution as well as the conformation of the graphene flakes within the composite.

Thick-film analysis: literature search and bibliography

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

Electrophoretic build-up of alternately multilayered films and micropatterns based on graphene sheets and nanoparticles and their applications in flexible supercapacitors.

Science.gov (United States)

Niu, Zhiqiang; Du, Jianjun; Cao, Xuebo; Sun, Yinghui; Zhou, Weiya; Hng, Huey Hoon; Ma, Jan; Chen, Xiaodong; Xie, Sishen

2012-10-22

Graphene nanosheets and metal nanoparticles (NPs) have been used as nano-building-blocks for assembly into macroscale hybrid structures with promising performance in electrical devices. However, in most graphene and metal NP hybrid structures, the graphene sheets and metal NPs (e.g., AuNPs) do not enable control of the reaction process, orientation of building blocks, and organization at the nanoscale. Here, an electrophoretic layer-by-layer assembly for constructing multilayered reduced graphene oxide (RGO)/AuNP films and lateral micropatterns is presented. This assembly method allows easy control of the nano-architecture of building blocks along the normal direction of the film, including the number and thickness of RGO and AuNP layers, in addition to control of the lateral orientation of the resultant multilayered structures. Conductivity of multilayered RGO/AuNP hybrid nano-architecture shows great improvement caused by a bridging effect of the AuNPs along the out-of-plane direction between the upper and lower RGO layers. The results clearly show the potential of electrophoretic build-up in the fabrication of graphene-based alternately multilayered films and patterns. Finally, flexible supercapacitors based on multilayered RGO/AuNP hybrid films are fabricated, and excellent performance, such as high energy and power densities, are achieved. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

Energy Technology Data Exchange (ETDEWEB)

Cong, Jiaojiao; Chen, Yuze; Luo, Jing, E-mail: jingluo19801007@126.com; Liu, Xiaoya

2014-10-15

A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet–visible absorption spectrum (UV–vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10{sup −4} to 1.2×10{sup −3} M with the detect limit of 5×10{sup −6} M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor. - Graphical abstract: A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. - Highlights: • A novel graphene/polyaniline (CCG/PANI) film was prepared by layer-by-layer assembly. • The water dispersible and negatively charged graphene (CCG) was used as building block. • CCG was achieved through partly reduced graphene oxide with carboxyl group on its surface. • CCG/PANI film kept

Photoconductivity of reduced graphene oxide and graphene oxide composite films

International Nuclear Information System (INIS)

Liang, Haifeng; Ren, Wen; Su, Junhong; Cai, Changlong

2012-01-01

A photoconductive device was fabricated by patterning magnetron sputtered Pt/Ti electrode and Reduced Graphene Oxide (RGO)/Graphene Oxide (GO) composite films with a sensitive area of 10 × 20 mm 2 . The surface morphology of as-deposited GO films was observed by scanning electronic microscopy, optical microscopy and atomic force microscopy, respectively. The absorption properties and chemical structure of RGO/GO composite films were obtained using a spectrophotometer and an X-ray photoelectron spectroscopy. The photoconductive properties of the system were characterized under white light irradiation with varied output power and biased voltage. The results show that the resistance decreased from 210 kΩ to 11.5 kΩ as the irradiation power increased from 0.0008 mW to 625 mW. The calculated responsiveness of white light reached 0.53 × 10 −3 A/W. Furthermore, the device presents a high photo-conductivity response and displays a photovoltaic response with an open circuit voltage from 0.017 V to 0.014 V with irradiation power. The sources of charge are attributed to efficient excitation dissociation at the interface of the RGO/GO composite film, coupled with cross-surface charge percolation.

A novel Graphene Oxide film: Synthesis and Dielectric properties

Science.gov (United States)

Canimkurbey, Betul; San, Sait Eren; Yasin, Muhammad; Köse, Muhammet Erkan

In this work, we used Hummers method to synthesize Graphene Oxide (GO) and its parallel plate impedance spectroscopic technique to investigate dielectric properties. Graphene Oxide films were coated using drop casting method on ITO substrate. To analyze film morphology, atomic force microscopy was used. Dielectrics measurements of the samples were performed using impedance analyzer (HP-4194) in frequency range (100 Hz to 10MHz) at different temperatures. It was observed that the films' AC conductivity σac varied with angular frequency, ω as ωS, with Sdirect current (DC) and Correlated Barrier Hopping (CBH) conductivity mechanisms at low and high frequency ranges, respectively. Using solution processed Graphene Oxide will provide potential for organic electronic applications through its photon absorption and transmittance capability in the visible range and excellent electrical parameters.

Preparation and Investigation of the Microtribological Properties of Graphene Oxide and Graphene Films via Electrostatic Layer-by-Layer Self-Assembly

Directory of Open Access Journals (Sweden)

Yongshou Hu

2015-01-01

Full Text Available Graphene oxide (GO films with controlled layers, deposited on single-crystal silicon substrates, were prepared by electrostatic self-assembly of negatively charged GO sheets. Afterward, graphene films were prepared by liquid-phase reduction of as-prepared GO films using hydrazine hydrate. The microstructures and microtribological properties of the samples were studied using X-ray photoelectron spectroscopy, Raman spectroscopy, X-ray diffraction, UV-vis absorption spectroscopy, water contact angle measurement, and atomic force microscopy. It is found that, whether GO films or graphene films, the adhesion force and the coefficients of friction both show strong dependence on the number of self-assembled layers, which both allow a downward trend as the number of self-assembled layers increases due to the interlayer sliding and the puckering effect when the tip slipped across the top surface of the films. Moreover, in comparison with the GO films with the same self-assembled layers, the graphene films possess lower adhesion force and coefficient of friction attributed to the difference of surface functional groups.

Electroactive and Optoelectronically Active Graphene Nanofilms

DEFF Research Database (Denmark)

Chi, Qijin

As an atomic-scale-thick two-dimensional material, graphene has emerged as one of the most miracle materials and has generated intensive interest in physics, chemistry and even biology in the last decade [1, 2]. Nanoscale engineering and functionalization of graphene is a crucial step for many...... applications ranging from catalysis, electronic devices, sensors to advanced energy conversion and storage [3]. This talk highlights our recent studies on electroactive and optoelectronically active graphene ultrathin films for chemical sensors and energy technology. The presentation includes a general theme...... for functionalization of graphene nanosheets, followed by showing several case studies. Our systems cover redox-active nanoparticles, electroactive supramolecular ensembles and redox enzymes which are integrated with graphene nanosheets as building blocks for the construction of functional thin films or graphene papers....

Spin coated graphene films as the transparent electrode in organic photovoltaic devices

International Nuclear Information System (INIS)

Kymakis, E.; Stratakis, E.; Stylianakis, M.M.; Koudoumas, E.; Fotakis, C.

2011-01-01

Many research efforts have been devoted to the replacement of the traditional indium–tin-oxide (ITO) electrode in organic photovoltaics. Solution-based graphene has been identified as a potential replacement, since it has less than two percent absorption per layer, relative high carrier mobility, and it offers the possibility of deposition on large area and flexible substrates, compatible with roll to roll manufacturing methods. In this work, soluble reduced graphene films with high electrical conductivity and transparency were fabricated and incorporated in poly(3-hexylthiophene) [6,6]-phenyl-C 61 -butyric acid methyl ester photovoltaic devices, as the transparent electrode. The graphene films were spin coated on glass from an aqueous dispersion of functionalized graphene, followed by a reduction process combining hydrazine vapor and annealing under argon, in order to reduce the sheet resistance. The photovoltaic devices obtained from the graphene films showed lower performance than the reference devices with ITO, due to the higher sheet resistance (2 kΩ/sq) and the poor hydrophilicity of the spin coated graphene films.

Influence of processing parameters on PZT thick films

International Nuclear Information System (INIS)

Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

2005-01-01

We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

Study on Photoelectric Properties of Composite Films of Graphene/Ti02 Nanorods

Directory of Open Access Journals (Sweden)

JIN　Guo-li

2017-02-01

Full Text Available TiOZ nanorods have large specific surface area and the ability of directional transmission electron， based on which can reduce recombination probability of light-generated electrons and holes，and improve the photoelectric conversion efficiency of DSSC. As graphene has low resistivity，good stability and excellent transparency，it can be introduced into anode film to improve the electronic transmission. The TiOZ nanorods were prepared by hydrothermal method，mixed with different quality of graphene. Its length range was 200-300 nm，with a diameter of about 20 nm. The porous graphene/TiOZ nanorods composite film were prepared by using electro- hydrodynamic technique(EHDand compositing TiOZ nanorods with different quality of grapheme. The photoelectric conversion efficiency of the DSSC device prepared with the photo-anode film with graphene mass content of 3 % was 4. 23 %，the photoelectric conversion efficiency increased by 36%，relative to that of no graphene doped TiOZ nanorods photo-anode film.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

Science.gov (United States)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Graphene-based flexible and stretchable thin film transistors.

Science.gov (United States)

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

The Effect of Thickness and Chemical Reduction of Graphene Oxide on Nanoscale Friction.

Science.gov (United States)

Kwon, Sangku; Lee, Kyung Eun; Lee, Hyunsoo; Koh, Sang Joon; Ko, Jae-Hyeon; Kim, Yong-Hyun; Kim, Sang Ouk; Park, Jeong Young

2018-01-18

The tribological properties of two-dimensional (2D) atomic layers are quite different from three-dimensional continuum materials because of the unique mechanical responses of 2D layers. It is known that friction on graphene shows a remarkable decreasing behavior as the number of layers increases, which is caused by the puckering effect. On other graphene derivatives, such as graphene oxide (GO) or reduced graphene oxide (rGO), the thickness dependence of friction is important because of the possibilities for technical applications. In this report, we demonstrate unexpected layer-dependent friction behavior on GO and rGO layers. Friction force microscopy measurements show that nanoscale friction on GO does not depend on the number of layers; however, after reduction, friction on rGO shows an inverse thickness dependence compared with pristine graphene. We show that the friction on rGO is higher than that on SiO 2 at low load, and that an interesting crossover behavior at higher load occurs because of the lower friction coefficient and higher adhesion of the rGO. We provide a relevant interpretation that explains the effect of thickness and chemical reduction on nanoscale friction.

The Thickness Dependence of Optical Constants of Ultrathin Iron Films

International Nuclear Information System (INIS)

Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

2013-01-01

Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

Multilayer films of cationic graphene-polyelectrolytes and anionic graphene-polyelectrolytes fabricated using layer-by-layer self-assembly

International Nuclear Information System (INIS)

Rani, Adila; Oh, Kyoung Ah; Koo, Hyeyoung; Lee, Hyung jung; Park, Min

2011-01-01

Extremely thin sheets of carbon atoms called graphene have been predicted to possess excellent thermal properties, electrical conductivity, and mechanical stiffness. To harness such properties in composite materials for multifunctional applications, one would require the incorporation of graphene. In this study, new thin film composites were created using layer-by-layer (LBL) assembly of polymer-coated graphitic nanoplatelets. The positive and negative polyelectrolytes used to cover graphene sheets were poly allylamine hydrochloride (PAH) and poly sodium 4-styrenesulfonate (PSS). The synthesized poly allylamine hydrochloride-graphene (PAH-G) and poly sodium 4-styrenesulfonate-gaphene (PSS-G) were characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and thermo gravimetric analysis (TGA). The multilayer films created by spontaneous sequential adsorption of PAH-G and PSS-G were characterized by ultra violet spectroscopy (UV-vis), scanning electron microscopy (SEM), and AFM. The electrical conductivity of the graphene/polyelectrolyte multilayer film composites measured by the four-point probe method was 0.2 S cm -1 , which was sufficient for the construction of advanced electro-optical devices and sensors.

Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Dangwal Pandey, A., E-mail: arti.pandey@desy.de; Grånäs, E.; Shayduk, R.; Noei, H.; Vonk, V. [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Krausert, K.; Franz, D.; Müller, P.; Keller, T. F.; Stierle, A., E-mail: andreas.stierle@desy.de [Deutsches Elektronen-Synchrotron (DESY), D-22607 Hamburg (Germany); Fachbereich Physik, Universität Hamburg, D-22607 Hamburg (Germany)

2016-08-21

Heteroepitaxial iridium thin films were deposited on (0001) sapphire substrates by means of molecular beam epitaxy, and subsequently, one monolayer of graphene was synthesized by chemical vapor deposition. The influence of the growth parameters on the quality of the Ir films, as well as of graphene, was investigated systematically by means of low energy electron diffraction, x-ray reflectivity, x-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, and atomic force microscopy. Our study reveals (111) oriented iridium films with high crystalline quality and extremely low surface roughness, on which the formation of large-area epitaxial graphene is achieved. The presence of defects, like dislocations, twins, and 30° rotated domains in the iridium films is also discussed. The coverage of graphene was found to be influenced by the presence of 30° rotated domains in the Ir films. Low iridium deposition rates suppress these rotated domains and an almost complete coverage of graphene was obtained. This synthesis route yields inexpensive, air-stable, and large-area graphene with a well-defined orientation, making it accessible to a wider community of researchers for numerous experiments or applications, including those which use destructive analysis techniques or irreversible processes. Moreover, this approach can be used to tune the structural quality of graphene, allowing a systematic study of the influence of defects in various processes like intercalation below graphene.

Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

Directory of Open Access Journals (Sweden)

Yen-Hua Chen

2012-01-01

Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

Monolithic acoustic graphene transistors based on lithium niobate thin film

Science.gov (United States)

Liang, J.; Liu, B.-H.; Zhang, H.-X.; Zhang, H.; Zhang, M.-L.; Zhang, D.-H.; Pang, W.

2018-05-01

This paper introduces an on-chip acoustic graphene transistor based on lithium niobate thin film. The graphene transistor is embedded in a microelectromechanical systems (MEMS) acoustic wave device, and surface acoustic waves generated by the resonator induce a macroscopic current in the graphene due to the acousto-electric (AE) effect. The acoustic resonator and the graphene share the lithium niobate film, and a gate voltage is applied through the back side of the silicon substrate. The AE current induced by the Rayleigh and Sezawa modes was investigated, and the transistor outputs a larger current in the Rayleigh mode because of a larger coupling to velocity ratio. The output current increases linearly with the input radiofrequency power and can be effectively modulated by the gate voltage. The acoustic graphene transistor realized a five-fold enhancement in the output current at an optimum gate voltage, outperforming its counterpart with a DC input. The acoustic graphene transistor demonstrates a paradigm for more-than-Moore technology. By combining the benefits of MEMS and graphene circuits, it opens an avenue for various system-on-chip applications.

A study of graphene films synthesized on nickel substrates: existence and origin of small-base-area peaks

International Nuclear Information System (INIS)

Kahng, Yung Ho; Choe, Minhyeok; Jo, Gunho; Park, Woojin; Yoon, Jongwon; Hong, Woong-Ki; Lee, Byoung Hun; Lee, Takhee; Lee, Sangchul; Cho, Chun Hum

2011-01-01

Large-area graphene films, synthesized by the chemical vapor deposition (CVD) method, have the potential to be used as electrodes. However, the electrical properties of CVD-synthesized graphene films fall short of the best results obtained for graphene films prepared by other methods. Therefore, it is important to understand the reason why these electrical properties are inferior to improve the applicability of CVD-grown graphene films. Here, we show that CVD-grown graphene films on nickel substrates contain many small-base-area (SBA) peaks that scatter conducting electrons, thereby decreasing the Hall mobility of charges in the films. These SBA peaks were induced by small peaks on the nickel surface and are likely composed of amorphous carbon. The formation of these SBA peaks on graphene films was successfully suppressed by controlling the surface morphology of the nickel substrate. These findings may be useful for the development of a CVD synthesis method that is capable of producing better quality graphene films with large areas.

Efficient reduction of graphene oxide film by low temperature heat treatment and its effect on electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hu, Xuebing; Chen, Zheng [Jingdezhen Ceramic Institute, Jingdezhen (China). Key Lab. of Inorganic Membrane; Yu, Yun [Shanghai Institute of Ceramics, Shanghai (China). Key Lab. of Inorganic Coating Materials; Zhang, Xiaozhen; Wang, Yongqing; Zhou, Jianer [Jingdezhen Ceramic Institute, Jingdezhen (China). Dept. of Materials Engineering

2018-03-01

Graphene-based conductive films have already attracted great attention due to their unique and outstanding physical properties. In this work, in order to develop a novel, effective method to produce these films with good electrical conductivity, a simple and green method is reported to rapidly and effectively reduce graphene oxide film using a low temperature heat treatment. The reduction of graphene oxide film is verified by XRD, FT-IR and Raman spectroscopy. Compared with graphene oxide film, the obtained reduced graphene oxide film has better electrical conductivity and its sheet resistance decreases from 25.3 kΩ x sq{sup -1} to 3.3 kΩ x sq{sup -1} after the heat treatment from 160 to 230 C. The mechanism of thermal reduction of the graphene oxide film mainly results from the removal of the oxygen-containing functional groups and the structural changes. All these results indicate that the low temperature heat treatment is a suitable and effective method for the reduction of graphene oxide film.

Electrolytically exfoliated graphene-loaded flame-made Ni-doped SnO2 composite film for acetone sensing.

Science.gov (United States)

Singkammo, Suparat; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

2015-02-11

In this work, flame-spray-made SnO2 nanoparticles are systematically studied by doping with 0.1-2 wt % nickel (Ni) and loading with 0.1-5 wt % electrolytically exfoliated graphene for acetone-sensing applications. The sensing films (∼12-18 μm in thickness) were prepared by a spin-coating technique on Au/Al2O3 substrates and evaluated for acetone-sensing performances at operating temperatures ranging from 150 to 350 °C in dry air. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, Brunauer-Emmett-Teller analysis, X-ray photoelectron spectroscopy and Raman spectroscopy demonstrated that Ni-doped SnO2 nanostructures had a spheriodal morphology with a polycrystalline tetragonal SnO2 phase, and Ni was confirmed to form a solid solution with SnO2 lattice while graphene in the sensing film after annealing and testing still retained its high-quality nonoxidized form. Gas-sensing results showed that SnO2 sensing film with 0.1 wt % Ni-doping concentration exhibited an optimal response of 54.2 and a short response time of ∼13 s toward 200 ppm acetone at an optimal operating temperature of 350 °C. The additional loading of graphene at 5 wt % into 0.1 wt % Ni-doped SnO2 led to a drastic response enhancement to 169.7 with a very short response time of ∼5.4 s at 200 ppm acetone and 350 °C. The superior gas sensing performances of Ni-doped SnO2 nanoparticles loaded with graphene may be attributed to the large specific surface area of the composite structure, specifically the high interaction rate between acetone vapor and graphene-Ni-doped SnO2 nanoparticles interfaces and high electronic conductivity of graphene. Therefore, the 5 wt % graphene loaded 0.1 wt % Ni-doped SnO2 sensor is a promising candidate for fast, sensitive and selective detection of acetone.

Film-thickness and composition dependence of epitaxial thin-film PZT-based

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

2013-01-01

The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

FDTD subcell graphene model beyond the thin-film approximation

Science.gov (United States)

Valuev, Ilya; Belousov, Sergei; Bogdanova, Maria; Kotov, Oleg; Lozovik, Yurii

2017-01-01

A subcell technique for calculation of optical properties of graphene with the finite-difference time-domain (FDTD) method is presented. The technique takes into account the surface conductivity of graphene which allows the correct calculation of its dispersive response for arbitrarily polarized incident waves interacting with the graphene. The developed technique is verified for a planar graphene sheet configuration against the exact analytical solution. Based on the same test case scenario, we also show that the subcell technique demonstrates a superior accuracy and numerical efficiency with respect to the widely used thin-film FDTD approach for modeling graphene. We further apply our technique to the simulations of a graphene metamaterial containing periodically spaced graphene strips (graphene strip-grating) and demonstrate good agreement with the available theoretical results.

Fabrication of graphene-nanoflake/poly(4-vinylphenol) polymer nanocomposite thin film by electrohydrodynamic atomization and its application as flexible resistive switching device

Energy Technology Data Exchange (ETDEWEB)

Choi, Kyung Hyun; Ali, Junaid [Department of Mechatronics Engineering, Jeju National University, Jeju 690-756 (Korea, Republic of); Na, Kyoung-Hoan, E-mail: khna@dankook.ac.kr [College of Engineering, Dankook University, Yongin-si, Gyeonggi-do 448-701 (Korea, Republic of)

2015-10-15

This paper describes synthesis of graphene/poly(4-vinylphenol) (PVP) nanocomposite and deposition of thin film by electrohydrodynamic atomization (EHDA) for fabrication flexible resistive switching device. EHDA technique proved its viability for thin film deposition after surface morphology analyses by field emission scanning electron microscope (FESEM) and non-destructive 3D Nano-profilometry, as the deposited films were, devoid of abnormalities. The commercially available graphene micro-flakes were exfoliated and broken down to ultra-small (20 nm–200 nm) nano-flakes by ultra-sonication in presence of N-methyl-pyrrolidone (NMP). These graphene nanoflakes with PVP nanocomposite, were successfully deposited as thin films (thickness ~140±7 nm, R{sub a}=2.59 nm) on indium–tin-oxide (ITO) coated polyethylene terephthalate (PET) substrate. Transmittance data revealed that thin films are up to ~87% transparent in visible and NIR region. Resistive switching behaviour of graphene/PVP nanocomposite thin film was studied by using the nanocomposite as active layer in Ag/active layer/ITO sandwich structure. The resistive switching devices thus fabricated, showed characteristic OFF to ON (high resistance to low resistance) transition at low voltages, when operated between ±3 V, characterized at 10 nA compliance currents. The devices fabricated by this approach exhibited a stable room temperature, low power current–voltage hysteresis and well over 1 h retentivity, and R{sub OFF}/R{sub ON}≈35:1. The device showed stable flexibility up to a minimum bending diameter of 1.8 cm.

Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

Energy Technology Data Exchange (ETDEWEB)

Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

2017-05-15

Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

Fine-Tuning the Wall Thickness of Ordered Mesoporous Graphene by Exploiting Ligand Exchange of Colloidal Nanocrystals

Directory of Open Access Journals (Sweden)

Dandan Han

2017-12-01

Full Text Available Because of their unique physical properties, three-dimensional (3D graphene has attracted enormous attention over the past years. However, it is still a challenge to precisely control the layer thickness of 3D graphene. Here, we report a novel strategy to rationally adjust the wall thickness of ordered mesoporous graphene (OMG. By taking advantage of ligand exchange capability of colloidal Fe3O4 nanocrystals, we are able to fine-tune the wall thickness of OMG from 2 to 6 layers of graphene. When evaluated as electrocatalyst for oxygen reduction reaction upon S and N doping, the 4-layer OMG is found to show better catalytic performance compared with their 2- and 6-layer counterparts, which we attribute to the enhanced exposure of active sites arising from the thin wall thickness and high surface area.

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

Science.gov (United States)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Large-area graphene films by simple solution casting of edge-selectively functionalized graphite.

Science.gov (United States)

Bae, Seo-Yoon; Jeon, In-Yup; Yang, Jieun; Park, Noejung; Shin, Hyeon Suk; Park, Sungjin; Ruoff, Rodney S; Dai, Liming; Baek, Jong-Beom

2011-06-28

We report edge-selective functionalization of graphite (EFG) for the production of large-area uniform graphene films by simply solution-casting EFG dispersions in dichloromethane on silicon oxide substrates, followed by annealing. The resultant graphene films show ambipolar transport properties with sheet resistances of 0.52-3.11 kΩ/sq at 63-90% optical transmittance. EFG allows solution processing methods for the scalable production of electrically conductive, optically transparent, and mechanically robust flexible graphene films for use in practice.

Film thickness determination by grazing incidence diffraction

Energy Technology Data Exchange (ETDEWEB)

Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

1996-09-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

Film thickness determination by grazing incidence diffraction

International Nuclear Information System (INIS)

Battiston, G. A.; Gerbasi, R.

1996-01-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

Thickness-self-controlled synthesis of porous transparent polyaniline-reduced graphene oxide composites towards advanced bifacial dye-sensitized solar cells

Science.gov (United States)

Wang, Yu-Sheng; Li, Shin-Ming; Hsiao, Sheng-Tsung; Liao, Wei-Hao; Yang, Shin-Yi; Tien, Hsi-Wen; Ma, Chen-Chi M.; Hu, Chi-Chang

2014-08-01

A powerful synthesis strategy is proposed for fabricating porous polyaniline-reduced graphene oxide (PANI-RGO) composites with transparency up to 80% and thickness from 300 to 1000 nm for the counter electrode (CE) of bifacial dye-sensitizing solar cells (DSSCs). The first step is to combine the in-situ positive charge transformation of graphene oxide (GO) through aniline (ANI) prepolymerization and the electrostatic adsorption of ANI oligomer-GO to effectively control the thickness of ultrathin PANI-GO films by adjusting pH of the polymerization media. In the second step, PANI-GO films are reduced with hydroiodic acid to simultaneously enhance the apparent redox activity for the I3-/I- couple and their electronic conductivity. Incorporating the RGO increases the transparency of PANI and facilitates the light-harvesting from the rear side. A DSSC assembled with such a transparent PANI-RGO CE exhibits an excellent efficiency of 7.84%, comparable to 8.19% for a semi-transparent Pt-based DSSC. The high light-harvesting ability of PANI-RGO enhances the efficiency retention between rear- and front-illumination modes to 76.7%, compared with 69.1% for a PANI-based DSSC. The higher retention reduces the power-to-weight ratio and the total cost of bifacial DSSCs, which is also promising in other applications, such as windows, power generators, and panel screens.

Fine-tuning the Wall Thickness of Ordered Mesoporous Graphene by Exploiting Ligand Exchange of Colloidal Nanocrystals

Science.gov (United States)

Han, Dandan; Yan, Yancui; Wei, Jishi; Wang, Biwei; Li, Tongtao; Guo, Guannan; Yang, Dong; Xie, Songhai; Dong, Angang

2017-12-01

Because of their unique physical properties, three-dimensional (3D) graphene has attracted enormous attention over the past years. However, it is still a challenge to precisely control the layer thickness of 3D graphene. Here, we report a novel strategy to rationally adjust the wall thickness of ordered mesoporous graphene (OMG). By taking advantage of ligand exchange capability of colloidal Fe3O4 nanocrystals, we are able to fine-tune the wall thickness of OMG from 2 to 6 layers of graphene by tailoring the hydrocarbon ligands attached to the nanocrystal surface. When evaluated as electrocatalyst for oxygen reduction reaction upon S and N doping, the 4-layer OMG is found to show better catalytic performance compared with its 2- and 6-layer counterparts, which we attribute to the enhanced exposure of active sites resulting from its ultrathin wall thickness and high surface area.

Controlled Synthesis of Monolayer Graphene Toward Transparent Flexible Conductive Film Application

Directory of Open Access Journals (Sweden)

Yu Han-Young

2010-01-01

Full Text Available Abstract We demonstrate the synthesis of monolayer graphene using thermal chemical vapor deposition and successive transfer onto arbitrary substrates toward transparent flexible conductive film application. We used electron-beam-deposited Ni thin film as a synthetic catalyst and introduced a gas mixture consisting of methane and hydrogen. To optimize the synthesis condition, we investigated the effects of synthetic temperature and cooling rate in the ranges of 850–1,000°C and 2–8°C/min, respectively. It was found that a cooling rate of 4°C/min after 1,000°C synthesis is the most effective condition for monolayer graphene production. We also successfully transferred as-synthesized graphene films to arbitrary substrates such as silicon-dioxide-coated wafers, glass, and polyethylene terephthalate sheets to develop transparent, flexible, and conductive film application.

Electrophoretic Nanocrystalline Graphene Film Electrode for Lithium Ion Battery

International Nuclear Information System (INIS)

Kaprans, Kaspars; Bajars, Gunars; Kucinskis, Gints; Dorondo, Anna; Mateuss, Janis; Gabrusenoks, Jevgenijs; Kleperis, Janis; Lusis, Andrejs

2015-01-01

Graphene sheets were fabricated by electrophoretic deposition method from water suspension of graphene oxide followed by thermal reduction. The formation of nanocrystalline graphene sheets has been confirmed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrochemical performance of graphene sheets as anode material for lithium ion batteries was evaluated by cycling voltammetry, galvanostatic charge-discharge cycling, and electrochemical impedance spectroscopy. Fabricated graphene sheets exhibited high discharge capacity of about 1120 mAh·g −1 and demonstrated good reversibility of lithium intercalation and deintercalation in graphene sheet film with capacity retention over 85 % after 50 cycles. Results show that nanocrystalline graphene sheets prepared by EPD demonstrated a high potential for application as anode material in lithium ion batteries

Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

Science.gov (United States)

Zeller, Patrick; Henß, Ann-Kathrin; Weinl, Michael; Diehl, Leo; Keefer, Daniel; Lippmann, Judith; Schulz, Anne; Kraus, Jürgen; Schreck, Matthias; Wintterlin, Joost

2016-11-01

Despite great previous efforts there is still a high need for a simple, clean, and upscalable method for detaching epitaxial graphene from the metal support on which it was grown. We present a method based on a pure gas phase reaction that is free of solvents and polymer supports and avoids mechanical transfer steps. The graphene was grown on 150 nm thick, single crystalline Ni(111) films on Si(111) wafers with YSZ buffer layers. Its quality was monitored by using low energy electron diffraction and scanning tunneling microscopy. The gas phase etching uses a chemical transport reaction, the so-called Mond process, based on the formation of gaseous nickel tetracarbonyl in 1 bar of CO at 75 °C and by adding small amounts of sulfide catalysts. X-ray photoelectron spectroscopy, Raman spectroscopy and scanning electron microscopy were used to characterize the detached graphene. It was found that the method successfully removes the nickel from underneath the graphene layer, so that the graphene lies on the insulating oxide buffer layer. Small residual particles of nickel sulfide and cracks in the obtained graphene layer were identified. The defect concentrations were comparable to graphene samples obtained by wet chemical etching and by the bubbling transfer.

Fabrication of graphene/polyaniline composite multilayer films by electrostatic layer-by-layer assembly

Science.gov (United States)

Cong, Jiaojiao; Chen, Yuze; Luo, Jing; Liu, Xiaoya

2014-10-01

A novel graphene/polyaniline composite multilayer film was fabricated by electrostatic interactions induced layer-by-layer self-assembly technique, using water dispersible and negatively charged chemically converted graphene (CCG) and positively charged polyaniline (PANI) as building blocks. CCG was achieved through partly reduced graphene oxide, which remained carboxyl group on its surface. The remaining carboxyl groups not only retain the dispersibility of CCG, but also allow the growth of the multilayer films via electrostatic interactions between graphene and PANI. The structure and morphology of the obtained CCG/PANI multilayer film are characterized by attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, Ultraviolet-visible absorption spectrum (UV-vis), scanning electron microscopy (SEM), Raman spectroscopy and X-Ray Diffraction (XRD). The electrochemical properties of the resulting film are studied using cyclic voltammetry (CV), which showed that the resulting CCG/PANI multilayer film kept electroactivity in neutral solution and showed outstanding cyclic stability up to 100 cycles. Furthermore, the composite film exhibited good electrocatalytic ability toward ascorbic acid (AA) with a linear response from 1×10-4 to 1.2×10-3 M with the detect limit of 5×10-6 M. This study provides a facile and effective strategy to fabricate graphene/PANI nanocomposite film with good electrochemical property, which may find potential applications in electronic devices such as electrochemical sensor.

Physical deoxygenation of graphene oxide paper surface and facile in situ synthesis of graphene based ZnO films

International Nuclear Information System (INIS)

Ding, Jijun; Wang, Minqiang; Zhang, Xiangyu; Ran, Chenxin; Shao, Jinyou; Ding, Yucheng

2014-01-01

In-situ sputtering ZnO films on graphene oxide (GO) paper are used to fabricate graphene based ZnO films. Crystal structure and surface chemical states are investigated. Results indicated that GO paper can be effectively deoxygenated by in-situ sputtering ZnO on them without adding any reducing agent. Based on the principle of radio frequency magnetron sputtering, we propose that during magnetron sputtering process, plasma streams contain large numbers of electrons. These electrons not only collide with argon atoms to produce secondary electrons but also they are accelerated to bombard the substrates (GO paper) resulting in effective deoxygenation of oxygen-containing functional groups. In-situ sputtering ZnO films on GO paper provide an approach to design graphene-semiconductor nanocomposites

Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

International Nuclear Information System (INIS)

Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

2015-01-01

Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

Reduction of graphene oxide and its effect on square resistance of reduced graphene oxide films

Energy Technology Data Exchange (ETDEWEB)

Hou, Zhaoxia; Zhou, Yin; Li, Guang Bin; Wang, Shaohong; Wang, Mei Han; Hu, Xiaodan; Li, Siming [Liaoning Province Key Laboratory of New Functional Materials and Chemical Technology, School ofMechanical Engineering, Shenyang University, Shenyang (China)

2015-06-15

Graphite oxide was prepared via the modified Hummers’ method and graphene via chemical reduction. Deoxygenation efficiency of graphene oxide was compared among single reductants including sodium borohydride, hydrohalic acids, hydrazine hydrate, and vitamin C. Two-step reduction of graphene oxide was primarily studied. The reduced graphene oxide was characterized by XRD, TG, SEM, XPS, and Raman spectroscopy. Square resistance was measured as well. Results showed that films with single-step N2H4 reduction have the best transmittance and electrical conductivity with square resistance of ~5746 Ω/sq at 70% transmittance. This provided an experimental basis of using graphene for electronic device applications.

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

Graphene Films Show Stable Cell Attachment and Biocompatibility with Electrogenic Primary Cardiac Cells

OpenAIRE

Kim, Taeyong; Kahng, Yung Ho; Lee, Takhee; Lee, Kwanghee; Kim, Do Han

2013-01-01

Graphene has attracted substantial attention due to its advantageous materialistic applicability. In the present study, we tested the biocompatibility of graphene films synthesized by chemical vapor deposition with electrogenic primary adult cardiac cells (cardiomyocytes) by measuring the cell properties such as cell attachment, survival, contractility and calcium transients. The results show that the graphene films showed stable cell attachment and excellent biocompatibility with the electro...

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

KAUST Repository

Gomez De Arco, Lewis

2010-05-25

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

Science.gov (United States)

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W; Ryu, Koungmin; Thompson, Mark E; Zhou, Chongwu

2010-05-25

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness ( approximately 0.9 nm) and offered sheet resistance down to 230 Omega/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (eta) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138 degrees , whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60 degrees . Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications.

Growth of wrinkle-free graphene on texture-controlled platinum films and thermal-assisted transfer of large-scale patterned graphene.

Science.gov (United States)

Choi, Jae-Kyung; Kwak, Jinsung; Park, Soon-Dong; Yun, Hyung Duk; Kim, Se-Yang; Jung, Minbok; Kim, Sung Youb; Park, Kibog; Kang, Seoktae; Kim, Sung-Dae; Park, Dong-Yeon; Lee, Dong-Su; Hong, Suk-Kyoung; Shin, Hyung-Joon; Kwon, Soon-Yong

2015-01-27

Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of ∼ 5500 cm(2) V(-1) s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.

Facile synthesis and electrochemical performances of binder-free flexible graphene/acetylene black sandwich film

International Nuclear Information System (INIS)

Xu, Juan; Wei, Xicheng; Cao, Jianyu; Dong, Yuanzhu; Wang, Guoxin; Xue, Yufei; Wang, Wenchang; Chen, Zhidong

2015-01-01

Graphene/acetylene black sandwich film was fabricated by a simple vacuum filtration procedure using a stable complex suspension of graphene oxide (GO) and acetylene black followed by a hydroiodic acid (HI) immersion process to fully reduce the GO to graphene sheets. The self-restacking of individual graphene sheets were greatly alleviated and electric conductivity was obviously improved using the acetylene black nanoparticles as both effective spacers to expand the inter-layer interval of the individual graphene sheets during the film assembly course and highly conducting bridges to facilitate the electron/ion transfer between the upper and lower graphene sheets. The flexible graphene/acetylene black film was utilized as supercapacitor electrode without additional conductive additives, binders and current collectors, which achieved an obviously higher specific capacitance (ca. 136.6 F g −1 at 0.5 A g −1 ) and much better specific capacitance retention at high current densities than that of the pure graphene film electrode, indicating that such a novel sandwich film structure allows for a higher charge storage capability. More importantly, the assembled symmetric supercapacitor device displayed a satisfactory specific capacitance of 59.2 F g −1 at 0.1 A g −1 , 47.6 F g −1 at 0.5 A g −1 and 42.8 F g −1 at 1 A g −1 , and only negligible 4.05% capacitance degradation have been found after 1000 continuous charge-discharge cycles at 0.5 A g −1 , revealing outstanding rate capability, excellent electrochemical reversibility and long-term cyclability. These results proved that such a flexible and highly conductive graphene/acetylene black film can be promising electroactive materials in the development of advanced electrochemical energy storage devices

Interferometric measurement of film thickness during bubble blowing

Science.gov (United States)

Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

2017-06-01

In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

High-Resolution Graphene Films for Electrochemical Sensing via Inkjet Maskless Lithography.

Science.gov (United States)

Hondred, John A; Stromberg, Loreen R; Mosher, Curtis L; Claussen, Jonathan C

2017-10-24

Solution-phase printing of nanomaterial-based graphene inks are rapidly gaining interest for fabrication of flexible electronics. However, scalable manufacturing techniques for high-resolution printed graphene circuits are still lacking. Here, we report a patterning technique [i.e., inkjet maskless lithography (IML)] to form high-resolution, flexible, graphene films (line widths down to 20 μm) that significantly exceed the current inkjet printing resolution of graphene (line widths ∼60 μm). IML uses an inkjet printed polymer lacquer as a sacrificial pattern, viscous spin-coated graphene, and a subsequent graphene lift-off to pattern films without the need for prefabricated stencils, templates, or cleanroom technology (e.g., photolithography). Laser annealing is employed to increase conductivity on thermally sensitive, flexible substrates [polyethylene terephthalate (PET)]. Laser annealing and subsequent platinum nanoparticle deposition substantially increases the electroactive nature of graphene as illustrated by electrochemical hydrogen peroxide (H 2 O 2 ) sensing [rapid response (5 s), broad linear sensing range (0.1-550 μm), high sensitivity (0.21 μM/μA), and low detection limit (0.21 μM)]. Moreover, high-resolution, complex graphene circuits [i.e., interdigitated electrodes (IDE) with varying finger width and spacing] were created with IML and characterized via potassium chloride (KCl) electrochemical impedance spectroscopy (EIS). Results indicated that sensitivity directly correlates to electrode feature size as the IDE with the smallest finger width and spacing (50 and 50 μm) displayed the largest response to changes in KCl concentration (∼21 kΩ). These results indicate that the developed IML patterning technique is well-suited for rapid, solution-phase graphene film prototyping on flexible substrates for numerous applications including electrochemical sensing.

Raman enhancement by graphene-Ga2O3 2D bilayer film.

Science.gov (United States)

Zhu, Yun; Yu, Qing-Kai; Ding, Gu-Qiao; Xu, Xu-Guang; Wu, Tian-Ru; Gong, Qian; Yuan, Ning-Yi; Ding, Jian-Ning; Wang, Shu-Min; Xie, Xiao-Ming; Jiang, Mian-Heng

2014-01-28

2D β-Ga2O3 flakes on a continuous 2D graphene film were prepared by a one-step chemical vapor deposition on liquid gallium surface. The composite was characterized by optical microscopy, scanning electron microscopy, Raman spectroscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy (XPS). The experimental results indicate that Ga2O3 flakes grew on the surface of graphene film during the cooling process. In particular, tenfold enhancement of graphene Raman scattering signal was detected on Ga2O3 flakes, and XPS indicates the C-O bonding between graphene and Ga2O3. The mechanism of Raman enhancement was discussed. The 2D Ga2O3-2D graphene structure may possess potential applications.

Flexible free-standing porous graphene/Ni film electrode with enhanced rate capability for lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Cao, Hailiang; Zhou, Xufeng, E-mail: zhouxf@nimte.ac.cn; Shi, Junli; Liu, Zhaoping, E-mail: liuzp@nimte.ac.cn

2016-11-15

Flexible, lightweight and reliable lithium-ion batteries have attracted tremendous attention and research interest to meet the requirements of portable and bendable devices. Here, flexible, free-standing and porous graphene/Ni film with vertical nano-channels inside is prepared by metal etching of graphene film. Compared with dense graphene film, the porous graphene/Ni film employed as a binder-free anode in lithium-ion batteries exhibits higher capacity and much better rate capability, due to its unique interior channel architecture which is favorable for fast ion transport. At a high current density of 2 A g{sup −1}, it can reach a specific capacity of 117 mAh g{sup −1}. The porous film also shows low charge transfer resistance and good cycling stability. After 300 cycles at 1 A g{sup −1}, its specific capacity still remains at 147 mAh g{sup −1}, with high Coulombic efficiency of nearly 100%. Furthermore, the strategy developed here is very simple and of great importance to rational design of porous graphene film or graphene-based hybrids with various applications.

Flexible free-standing porous graphene/Ni film electrode with enhanced rate capability for lithium-ion batteries

International Nuclear Information System (INIS)

Cao, Hailiang; Zhou, Xufeng; Shi, Junli; Liu, Zhaoping

2016-01-01

Flexible, lightweight and reliable lithium-ion batteries have attracted tremendous attention and research interest to meet the requirements of portable and bendable devices. Here, flexible, free-standing and porous graphene/Ni film with vertical nano-channels inside is prepared by metal etching of graphene film. Compared with dense graphene film, the porous graphene/Ni film employed as a binder-free anode in lithium-ion batteries exhibits higher capacity and much better rate capability, due to its unique interior channel architecture which is favorable for fast ion transport. At a high current density of 2 A g"−"1, it can reach a specific capacity of 117 mAh g"−"1. The porous film also shows low charge transfer resistance and good cycling stability. After 300 cycles at 1 A g"−"1, its specific capacity still remains at 147 mAh g"−"1, with high Coulombic efficiency of nearly 100%. Furthermore, the strategy developed here is very simple and of great importance to rational design of porous graphene film or graphene-based hybrids with various applications.

Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

KAUST Repository

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

2010-01-01

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

NdFeB thick films prepared by tape casting

International Nuclear Information System (INIS)

Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

2003-01-01

NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

Effect of structure on the tribology of ultrathin graphene and graphene oxide films.

Science.gov (United States)

Chen, Hang; Filleter, Tobin

2015-03-27

The friction and wear properties of graphene and graphene oxide (GO) with varying C/O ratio were investigated using friction force microscopy. When applied as solid lubricants between a sliding contact of a silicon (Si) tip and a SiO2/Si substrate, graphene and ultrathin GO films (as thin as 1-2 atomic layers) were found to reduce friction by ∼6 times and ∼2 times respectively as compared to the unlubricated contact. The differences in measured friction were attributed to different interfacial shear strengths. Ultrathin films of GO with a low C/O ratio of ∼2 were found to wear easily under small normal load. The onset of wear, and the location of wear initiation, is attributed to differences in the local shear strength of the sliding interface as a result of the non-homogeneous surface structure of GO. While the exhibited low friction of GO as compared to SiO2 makes it an economically viable coating for micro/nano-electro-mechanical systems with the potential to extend the lifetime of devices, its higher propensity for wear may limit its usefulness. To address this limitation, the wear resistance of GO samples with a higher C/O ratio (∼4) was also studied. The higher C/O ratio GO was found to exhibit much improved wear resistance which approached that of the graphene samples. This demonstrates the potential of tailoring the structure of GO to achieve graphene-like tribological properties.

Transparent and flexible conducting hybrid film combined with 3-Aminopropyltriethoxysilane-coated polymer and graphene

International Nuclear Information System (INIS)

Jung, Daesung; Ko, Yong-Hun; Cho, Jumi; Adhikari, Prashanta Dhoj; Lee, Su Il; Kim, Yooseok; Song, Wooseok; Jung, Min Wook; Jang, Sung Won; Lee, Seung Youb; An, Ki-Seok; Park, Chong-Yun

2015-01-01

A simple approach to fabricate graphene hybrid film consisted of Graphene/3-aminopropyltriethoxysilane (APTES)/polyethylene terephthalate (PET) is presented, using self-assembled monolayers (SAMs) for enhancement of conductivity. The SAMs of APTES was prepared on ultraviolet-ozone (UVO)-irradiated PET films via wet chemical technique. The density of APTES was saturated after UV treatment time of 1 h for PET films; the carrier density and the optical transmittance were 9.3 × 10 12 /cm 2 and 82% for pristine graphene and 1.16 × 10 13 /cm 2 and 86% for graphene hybrid films, respectively, and experienced at inflection point at 30 min in UV treatment time. This behavior can be explained by surface morphology transition due to coalescence or clustering of mobile and low-molecular-weight oxidized components of PET.

Solid-phase electrochemical reduction of graphene oxide films in alkaline solution

Science.gov (United States)

Basirun, Wan J.; Sookhakian, Mehran; Baradaran, Saeid; Mahmoudian, Mohammad R.; Ebadi, Mehdi

2013-09-01

Graphene oxide (GO) film was evaporated onto graphite and used as an electrode to produce electrochemically reduced graphene oxide (ERGO) films by electrochemical reduction in 6 M KOH solution through voltammetric cycling. Fourier transformed infrared and Raman spectroscopy confirmed the presence of ERGO. Electrochemical impedance spectroscopy characterization of ERGO and GO films in ferrocyanide/ferricyanide redox couple with 0.1 M KCl supporting electrolyte gave results that are in accordance with previous reports. Based on the EIS results, ERGO shows higher capacitance and lower charge transfer resistance compared to GO.

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

International Nuclear Information System (INIS)

Breiland, W.G.; Lee, S.R.; Koleske, D.D.

2004-01-01

When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

Graphene-based electrodes for enhanced organic thin film transistors based on pentacene.

Science.gov (United States)

Basu, Sarbani; Lee, Mu Chen; Wang, Yeong-Her

2014-08-21

This paper presents 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based organic thin film transistors (OTFTs) with monolayer graphene source-drain (S-D) electrodes. The electrodes are patterned using conventional photolithographic techniques combined with reactive ion etching. The monolayer graphene film grown by chemical vapor deposition on Cu foil was transferred on a Si dioxide surface using a polymer-supported transfer method to fabricate bottom-gate, bottom-contact OTFTs. The pentacene OTFTs with graphene S-D contacts exhibited superior performance with a mobility of 0.1 cm(2) V(-1) s(-1) and an on-off ratio of 10(5) compared with OTFTs with Au-based S-D contacts, which had a mobility of 0.01 cm(2) V(-1) s(-1) and an on-off ratio of 10(3). The crystallinity, grain size, and microscopic defects (or the number of layers of graphene films) of the TIPS-pentacene/pentacene films were analyzed by X-ray diffraction spectroscopy, atomic force microscopy, and Raman spectroscopy, respectively. The feasibility of using graphene as an S-D electrode in OTFTs provides an alternative material with high carrier injection efficiency, chemical stability, and excellent interface properties with organic semiconductors, thus exhibiting improved device performance of C-based electronic OTFTs at a reduced cost.

PVA-based nanographene film by electrospinning

Directory of Open Access Journals (Sweden)

Pang Jing

2013-01-01

Full Text Available Two-dimensional polyvinyl alcohol based graphene films with the thickness of less than 20 nm were fabricated directly by using polyvinyl alcohol/graphite solution or polyvinyl alcohol/ash solution by electrospinning. It was found that ash particles are good candidate for substitution of graphite particles to fabricate nanographene films. The relationship between the thickness and width of the film is elucidated, and the periodic morphology of the film is explained.

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

Fabrication of oxide-free graphene suspension and transparent thin films using amide solvent and thermal treatment

International Nuclear Information System (INIS)

Oh, Se Young; Kim, Sung Hwan; Chi, Yong Seung; Kang, Tae Jin

2012-01-01

Graphical abstract: New methodology for suspended graphene sheets of high-quality (oxide-free), high-yield (high concentration) using amide solvent exfoliation and thermal treatment at 800 °C. We confirmed that the van der Waals force between the graphene layers decreases as increasing thermal treatment temperatures as shown XRD data (b). Highlights: ► Propose of new methodology to prepare oxide-free graphene sheets suspension. ► The graphene suspension concentration is enhanced by thermal treatment. ► Decrease of van der Waals force between the graphene layers by high temperature and pressure. ► This method has the potential as technology for mass production. ► It could be applied in transparent and flexible electronic devices. - Abstract: High quality graphene sheets were produced from graphite by liquid phase exfoliation using N-methyl-2-pyrrolidone (NMP) and a subsequent thermal treatment to enhance the exfoliation. The exfoliation was enhanced by treatment with organic solvent and high thermal expansion producing high yields of the high-quality and defect-free graphene sheets. The graphene was successfully deposited on a flexible and transparent polymer film using the vacuum filtration method. SEM images of thin films of graphene treated at 800 °C showed uniform structure with no defects commonly found in films made of graphene produced by other techniques. Thin films of graphene prepared at higher temperatures showed superior transmittance and conductivity. The sheet-resistance of the graphene film treated at 800 °C was 2.8 × 10 3 kΩ/□ with 80% transmittance.

Contamination-Free Graphene Transfer from Cu-Foil and Cu-Thin-Film/Sapphire

Directory of Open Access Journals (Sweden)

Jaeyeong Lee

2017-12-01

Full Text Available The separation of graphene grown on metallic catalyst by chemical vapor deposition (CVD is essential for device applications. The transfer techniques of graphene from metallic catalyst to target substrate usually use the chemical etching method to dissolve the metallic catalyst. However, this causes not only high material cost but also environmental contamination in large-scale fabrication. We report a bubble transfer method to transfer graphene films to arbitrary substrate, which is nondestructive to both the graphene and the metallic catalyst. In addition, we report a type of metallic catalyst, which is 700 nm of Cu on sapphire substrate, which is hard enough to endure against any procedure in graphene growth and transfer. With the Cr adhesion layer between sapphire and Cu film, electrochemically delaminated graphene shows great quality during several growth cycles. The electrochemical bubble transfer method can offer high cost efficiency, little contamination and environmental advantages.

Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

International Nuclear Information System (INIS)

Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

2015-01-01

In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

Efficient heat generation in large-area graphene films by electromagnetic wave absorption

Science.gov (United States)

Kang, Sangmin; Choi, Haehyun; Lee, Soo Bin; Park, Seong Chae; Park, Jong Bo; Lee, Sangkyu; Kim, Youngsoo; Hong, Byung Hee

2017-06-01

Graphene has been intensively studied due to its outstanding electrical and thermal properties. Recently, it was found that the heat generation by Joule heating of graphene is limited by the conductivity of graphene. Here we suggest an alternative method to generate heat on a large-area graphene film more efficiently by utilizing the unique electromagnetic (EM) wave absorption property of graphene. The EM wave induces an oscillating magnetic moment generated by the orbital motion of moving electrons, which efficiently absorbs the EM energy and dissipate it as a thermal energy. In this case, the mobility of electron is more important than the conductivity, because the EM-induced diamagnetic moment is directly proportional to the speed of electron in an orbital motion. To control the charge carrier mobility of graphene we functionalized substrates with self-assembled monolayers (SAM). As the result, we find that the graphene showing the Dirac voltage close to zero can be more efficiently heated by EM waves. In addition, the temperature gradient also depends on the number of graphene. We expect that the efficient and fast heating of graphene films by EM waves can be utilized for smart heating windows and defogging windshields.

Preventing Thin Film Dewetting via Graphene Capping.

Science.gov (United States)

Cao, Peigen; Bai, Peter; Omrani, Arash A; Xiao, Yihan; Meaker, Kacey L; Tsai, Hsin-Zon; Yan, Aiming; Jung, Han Sae; Khajeh, Ramin; Rodgers, Griffin F; Kim, Youngkyou; Aikawa, Andrew S; Kolaczkowski, Mattew A; Liu, Yi; Zettl, Alex; Xu, Ke; Crommie, Michael F; Xu, Ting

2017-09-01

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single-layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH-TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer-capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene diamond-like carbon films heterostructure

International Nuclear Information System (INIS)

Zhao, Fang; Afandi, Abdulkareem; Jackman, Richard B.

2015-01-01

A limitation to the potential use of graphene as an electronic material is the lack of control over the 2D materials properties once it is deposited on a supporting substrate. Here, the use of Diamond-like Carbon (DLC) interlayers between the substrate and the graphene is shown to offer the prospect of overcoming this problem. The DLC films used here, more properly known as a-C:H with ∼25% hydrogen content, have been terminated with N or F moieties prior to graphene deposition. It is found that nitrogen terminations lead to an optical band gap shrinkage in the DLC, whilst fluorine groups reduce the DLC's surface energy. CVD monolayer graphene subsequently transferred to DLC, N terminated DLC, and F terminated DLC has then been studied with AFM, Raman and XPS analysis, and correlated with Hall effect measurements that give an insight into the heterostructures electrical properties. The results show that different terminations strongly affect the electronic properties of the graphene heterostructures. G-F-DLC samples were p-type and displayed considerably higher mobility than the other heterostructures, whilst G-N-DLC samples supported higher carrier densities, being almost metallic in character. Since it would be possible to locally pattern the distribution of these differing surface terminations, this work offers the prospect for 2D lateral control of the electronic properties of graphene layers for device applications

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Graphene growth by transfer-free chemical vapour deposition on a cobalt layer

Science.gov (United States)

Macháč, Petr; Hejna, Ondřej; Slepička, Petr

2017-01-01

The contribution deals with the preparation of graphene films by a transfer-free chemical vapour deposition process utilizing a thin cobalt layer. This method allows growing graphene directly on a dielectric substrate. The process was carried out in a cold-wall reactor with methane as carbon precursor. We managed to prepare bilayer graphene. The best results were obtained for a structure with a cobalt layer with a thickness of 50 nm. The quality of prepared graphene films and of the number of graphene layers were estimated using Raman spectroscopy. with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Science.gov (United States)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing; Diao, Dongfeng

2016-07-01

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Optical transparency of graphene layers grown on metal surfaces

International Nuclear Information System (INIS)

Rut’kov, E. V.; Lavrovskaya, N. P.; Sheshenya, E. S.; Gall, N. R.

2017-01-01

It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

Optical transparency of graphene layers grown on metal surfaces

Energy Technology Data Exchange (ETDEWEB)

Rut’kov, E. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Lavrovskaya, N. P. [State University of Aerospace Instrumentation (Russian Federation); Sheshenya, E. S., E-mail: sheshenayket@gmail.ru; Gall, N. R. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-04-15

It is shown that, in contradiction with the fundamental results obtained for free graphene, graphene films grown on the Rh(111) surface to thicknesses from one to ~(12–15) single layers do not absorb visible electromagnetic radiation emitted from the surface and influence neither the brightness nor true temperature of the sample. At larger thicknesses, such absorption occurs. This effect is observed for the surfaces of other metals, specifically, Pt(111), Re(1010), and Ni(111) and, thus, can be considered as being universal. It is thought that the effect is due to changes in the electronic properties of thin graphene layers because of electron transfer between graphene and the metal substrate.

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Utilization of plasmas for graphene synthesis

Science.gov (United States)

Shashurin, Alexey; Keidar, Michael

2013-10-01

Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed in a honeycomb crystal lattice. Grapheen has tremendous range of potential applications ranging from high-speed transistors to electrochemical energy storage devices and biochemical sensors. Methods of graphene synthesis include mechanical exfoliation, epitaxial growth on SiC, CVD and colloidal suspensions. In this work the utilization of plasmas in synthesis process is considered. Types of carbonaceous structures produced by the anodic arc and regions of their synthesis were studied. Ultimate role of substrate temperature and transformations occurring with various carbonaceous structures generated in plasma discharge were considered. Formation of graphene film on copper substrate was detected at temperatures around the copper melting point. The film was consisted of several layers graphene flakes having typical sizes of about 200 nm. Time required for crystallization of graphene on externally heated substrates was determined. This work was supported by National Science Foundation (NSF Grant No. CBET-1249213).

A "Tandem" Strategy to Fabricate Flexible Graphene/Polypyrrole Nanofiber Film Using the Surfactant-Exfoliated Graphene for Supercapacitors.

Science.gov (United States)

Shu, Kewei; Chao, Yunfeng; Chou, Shulei; Wang, Caiyun; Zheng, Tian; Gambhir, Sanjeev; Wallace, Gordon G

2018-06-19

The surfactant-assisted liquid-phase exfoliation of expanded graphite can produce graphene sheets in large quantities with minimal defects. However, it is difficult to completely remove the surfactant from the final product, thus affecting the electrochemical properties of the produced graphene. In this article, a novel approach to fabricate flexible graphene/polypyrrole film was developed: using surfactant cetyltrimethylammonium bromide as a template for growth of polypyrrole nanofibers (PPyNFs) instead of removal after the exfoliation process; followed by a simple filtration method. The introduction of PPyNF not only increases the electrochemical performance, but also ensures flexibility. This composite film electrode offers a capacitance up to 161 F g -1 along with a capacitance retention rate of over 80% after 5000 cycles.

Preparation and property of UV-curable polyurethane acrylate film filled with cationic surfactant treated graphene

Energy Technology Data Exchange (ETDEWEB)

Xu, Jinghong; Cai, Xia; Shen, Fenglei, E-mail: shenfenglei@suda.edu.cn

2016-08-30

Highlights: • The non-covalent modification of graphene maintains the intrinsic structure of graphene compared with the covalent functionalization of graphene. • The initial degradation temperature of nanocomposite film increases by 57 °C which is much higher than that of PUA nanocomposite previously reported. • The nanocomposite film exhibits improved dielectric property and electrical conductivity. • The outstanding performance of CTAB-G/PUA films will open up enormous opportunities for applications in various regions such as high temperature or electrical field. - Abstract: The preparation of nanocomposite films composed of UV-curable polyurethane acrylate (PUA) and modified graphene were demonstrated in this paper. Cetyl trimethyl ammonium bromide modified graphene (CTAB-G) was prepared via intercalation of cationic surfactant and subsequently incorporated into PUA by UV curing technology. Fourier transform infrared spectra, wide-angle X-ray diffraction, scanning electron microscopy and transmission electron microscopy were used to characterize the structure and morphology of CTAB-G, as well as CTAB-G/PUA nanocomposite films. The results revealed that the CTAB-G sheets were layer-by-layer structure and dispersed uniformly in PUA matrix. Thermal gravimetric analysis showed that the thermal stabilities of UV-curable PUA nanocomposite films in this work were much higher than that of PUA nanocomposites previously reported. Dynamic mechanical analysis indicated that the dynamic mechanical properties of nanocomposite films were greatly enhanced in the presence of modified graphene sheets. In addition, the CTAB-G/PUA nanocomposite films exhibited improved dielectric properties and electrical conductivities compared with the pure PUA.

Influence of thickness on properties of plasticized oat starch films

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Melicia Cintia Galdeano

2013-08-01

Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

Nano-Architecture of nitrogen-doped graphene films synthesized from a solid CN source.

Science.gov (United States)

Maddi, Chiranjeevi; Bourquard, Florent; Barnier, Vincent; Avila, José; Asensio, Maria-Carmen; Tite, Teddy; Donnet, Christophe; Garrelie, Florence

2018-02-19

New synthesis routes to tailor graphene properties by controlling the concentration and chemical configuration of dopants show great promise. Herein we report the direct reproducible synthesis of 2-3% nitrogen-doped 'few-layer' graphene from a solid state nitrogen carbide a-C:N source synthesized by femtosecond pulsed laser ablation. Analytical investigations, including synchrotron facilities, made it possible to identify the configuration and chemistry of the nitrogen-doped graphene films. Auger mapping successfully quantified the 2D distribution of the number of graphene layers over the surface, and hence offers a new original way to probe the architecture of graphene sheets. The films mainly consist in a Bernal ABA stacking three-layer architecture, with a layer number distribution ranging from 2 to 6. Nitrogen doping affects the charge carrier distribution but has no significant effects on the number of lattice defects or disorders, compared to undoped graphene synthetized in similar conditions. Pyridinic, quaternary and pyrrolic nitrogen are the dominant chemical configurations, pyridinic N being preponderant at the scale of the film architecture. This work opens highly promising perspectives for the development of self-organized nitrogen-doped graphene materials, as synthetized from solid carbon nitride, with various functionalities, and for the characterization of 2D materials using a significant new methodology.

Dewetting Properties of Metallic Liquid Film on Nanopillared Graphene

Science.gov (United States)

Li, Xiongying; He, Yezeng; Wang, Yong; Dong, Jichen; Li, Hui

2014-01-01

In this work, we report simulation evidence that the graphene surface decorated by carbon nanotube pillars shows strong dewettability, which can give it great advantages in dewetting and detaching metallic nanodroplets on the surfaces. Molecular dynamics (MD) simulations show that the ultrathin liquid film first contracts then detaches from the graphene on a time scale of several nanoseconds, as a result of the inertial effect. The detaching velocity is in the order of 10 m/s for the droplet with radii smaller than 50 nm. Moreover, the contracting and detaching behaviors of the liquid film can be effectively controlled by tuning the geometric parameters of the liquid film or pillar. In addition, the temperature effects on the dewetting and detaching of the metallic liquid film are also discussed. Our results show that one can exploit and effectively control the dewetting properties of metallic nanodroplets by decorating the surfaces with nanotube pillars. PMID:24487279

Preparation of reduced graphene oxide/gelatin composite films with reinforced mechanical strength

International Nuclear Information System (INIS)

Wang, Wenchao; Wang, Zhipeng; Liu, Yu; Li, Nan; Wang, Wei; Gao, Jianping

2012-01-01

Highlights: ► We used and compared different proportion of gelatin and chitosan as reducing agents. ► The mechanical properties of the films are investigated, especially the wet films. ► The cell toxicity of the composite films as biomaterial is carried out. ► The water absorption capabilities of the composite films also studied. -- Abstract: Graphene oxide (GO) was reduced by chitosan/gelatin solution and added to gelatin (Gel) to fabricate reduced graphene oxide/gelatin (RGO/Gel) films by a solvent-casting method using genipin as cross-linking agent. The structure and properties of the films were characterized by scanning electron microscopy (SEM), X-ray powder diffraction (XRD), thermogravimetric analysis (TGA) and UV–vis spectroscopy. The addition of RGO increased the tensile strength of the RGO/Gel films in both dry and wet states, but decreased their elongation at break. The incorperation of RGO also decreased the swelling ability of the films in water. Cell cultures were carried out in order to test the cytotoxicity of the films. The cells grew and reproduced well on the RGO/Gel films, indicating that the addition of RGO has no negative effect on the compatibility of the gelatin. Therefore, the reduced graphene oxide/gelatin composite is a promising biomaterial with excellent mechanical properties and good cell compatibility.

Film thickness in gas-liquid two-phase flow, (2)

International Nuclear Information System (INIS)

Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

1977-01-01

The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films

Directory of Open Access Journals (Sweden)

Zhi Li

2013-04-01

Full Text Available Incorporating Ag nanowires with graphene resulted in improved electrical conductivity and enhanced contact properties between graphene and p-GaN. The graphene/AgNWs hybrid films exhibited high transmittance and lower sheet resistance compared to bare graphene. The specific contact resistance between graphene and p-GaN reduced nearly an order of magnitude with the introduction of AgNWs. As a result, light emitting diodes based on the hybrid films showed 44% lower forward voltage and 2-fold higher light output power. The enhanced performance was attributed to the bridging by AgNWs of cracks, grain boundaries in graphene and the reduction of Schottky barrier height at graphene/ p-GaN interface.

One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

International Nuclear Information System (INIS)

Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

2006-01-01

A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

Barium titanate thick films prepared by screen printing technique

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Mirjana M. Vijatović

2010-06-01

Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

Temperature- and thickness-dependent elastic moduli of polymer thin films

Directory of Open Access Journals (Sweden)

Ao Zhimin

2011-01-01

Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

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Sukon Phanichphant

2007-02-01

Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns.

Science.gov (United States)

Wang, Bin; Huang, Ming; Tao, Li; Lee, Sun Hwa; Jang, A-Rang; Li, Bao-Wen; Shin, Hyeon Suk; Akinwande, Deji; Ruoff, Rodney S

2016-01-26

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

Neutron Reflectivity Measurement for Polymer Dynamics near Graphene Oxide Monolayers

Science.gov (United States)

Koo, Jaseung

We investigated the diffusion dynamics of polymer chains confined between graphene oxide layers using neutron reflectivity (NR). The bilayers of polymethylmetacrylate (PMMA)/ deuterated PMMA (d-PMMA) films and polystyrene (PS)/d-PS films with various film thickness sandwiched between Langmuir-Blodgett (LB) monolayers of graphene oxide (GO) were prepared. From the NR results, we found that PMMA diffusion dynamics was reduced near the GO surface while the PS diffusion was not significantly changed. This is due to the different strength of GO-polymer interaction. In this talk, these diffusion results will be compared with dewetting dynamics of polymer thin films on the GO monolayers. This has given us the basis for development of graphene-based nanoelectronics with high efficiency, such as heterojunction devices for polymer photovoltaic (OPV) applications.

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing [Key Laboratory of Education Ministry for Modern Design and Rotor-Bearing System, School of Mechanical Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Diao, Dongfeng, E-mail: dfdiao@szu.edu.cn [Institute of Nanosurface Science and Engineering (INSE), Shenzhen University, Shenzhen 518060 (China)

2016-07-18

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Nanosized graphene sheets enhanced photoelectric behavior of carbon film on p-silicon substrate

International Nuclear Information System (INIS)

Yang, Lei; Hu, Gaijuan; Zhang, Dongqing; Diao, Dongfeng

2016-01-01

We found that nanosized graphene sheets enhanced the photoelectric behavior of graphene sheets embedded carbon (GSEC) film on p-silicon substrate, which was deposited under low energy electron irradiation in electron cyclotron resonance plasma. The GSEC/p-Si photodiode exhibited good photoelectric performance with photoresponsivity of 206 mA/W, rise and fall time of 2.2, and 4.3 μs for near-infrared (850 nm) light. The origin of the strong photoelectric behavior of GSEC film was ascribed to the appearance of graphene nanosheets, which led to higher barrier height and photoexcited electron-collection efficiency. This finding indicates that GSEC film has the potential for photoelectric applications.

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

Science.gov (United States)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Two dimensional MoS{sub 2}/graphene p-n heterojunction diode: Fabrication and electronic characteristics

Energy Technology Data Exchange (ETDEWEB)

Su, Wei-Jhih [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Chang, Hsuan-Chen [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Shih, Yi-Ting [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Wang, Yi-Ping [Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Hsu, Hung-Pin [Department of Electronic Engineering, Ming Chi University of Technology, 84 Gungjuan Road, New Taipei City 24301, Taiwan (China); Huang, Ying-Sheng [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Lee, Kuei-Yi, E-mail: kylee@mail.ntust.edu.tw [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China); Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Section 4, Keelung Road, Taipei 10607, Taiwan (China)

2016-06-25

Molybdenum disulfide (MoS{sub 2}) films are currently the most potential semiconductor materials of the two-dimensional nano-material heterojunction. Few-layer MoS{sub 2} is an n-type semiconductor that has good mechanical strength, high carrier mobility, and has similar thickness as graphene. Graphene is presently the thinnest two-dimensional material with good thermal conductivity and high carrier mobility. The graphene Fermi level can be precisely controlled using the oxygen adsorption. Therefore, graphene can be tuned from zero-gap to p-type semiconductor material using the amount of adsorbed oxygen. In this study we combine few-layer MoS{sub 2} and graphene to produce a heterojunction and exhaustively study the interface properties for heterojunction diode application. According to the results, the MoS{sub 2} band-gap increases with decreasing thickness. The I–V characteristics of the MoS{sub 2}/Graphene p-n junction diodes can be precisely tuned by adjusting different thicknesses of the MoS{sub 2} films. By applying our fabricating method, MoS{sub 2}/Graphene heterojunction diode can be easily constructed and have potential to different applications. - Highlights: • We controlled the layer thickness of MoS{sub 2} by different exfoliation times. • We presented Raman scattering of MoS{sub 2} and define their layers number. • The few-layer MoS{sub 2}/graphene pn junction diode was synthesized. • We measured the device current and voltage characteristics. • The built-in potential barrier could be adjusted by controlling MoS{sub 2} thicknesses.

Properties of spray-deposited liquid-phase exfoliated graphene films

Science.gov (United States)

Sales, Maria Gabriela C.; Dela Vega, Ma. Shanlene D. C.; Vasquez, Magdaleno R., Jr.

2018-01-01

In this study, we demonstrate the feasibility of spray-depositing exfoliated graphene on flexible polyimide (PI) and rigid (soda lime glass) substrates for optoelectronic applications. The water contact angles of the substrates increased by 13% (for PI) and 49% (for glass) when the surfaces are pretreated with hexamethyldisiloxane, which significantly improved the adhesion of the films. Raman spectral analyses confirmed a minimum of 15 and a maximum of 23 layers of exfoliated graphene deposited on the substrates. After deposition, the films were exposed to 13.56 MHz radio-frequency plasma containing an admixture of argon and nitrogen gases. Plasma treatment modified the electrical properties with a response analogous to that of a rectifier. A 39% increase in transmittance in the visible region was also observed especially for glass substrates after plasma treatment without a significant change in film electrical conductivity.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

Energy Technology Data Exchange (ETDEWEB)

Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals

International Nuclear Information System (INIS)

Miyoshi, Makoto; Mizuno, Masaya; Banno, Kazuya; Kubo, Toshiharu; Egawa, Takashi; Soga, Tetsuo

2015-01-01

Transfer-free graphene synthesis process utilizing metal agglomeration phenomena was investigated by using carbon films deposited on Ni or Co catalyst metals on SiO 2 /Si substrates. As a result of metal agglomeration at high temperatures, multilayer graphene films appeared to be formed directly on SiO 2 films. The microscopic Raman mapping study revealed that graphene films were preferentially synthesized around areas where metal films disappeared at an early stage of agglomeration, and that they finally covered almost the whole surface. It was also found that the synthesized graphene films tended to have better structural qualities and lower layer numbers with the increase in the starting metal thicknesses regardless of the kinds of catalyst metals. Raman study also showed that they had good two-dimensional uniformity in the structural quality. (paper)

A new attempt of measurement film thickness by x-ray diffractometry

International Nuclear Information System (INIS)

Kosaka, Masao; Kobayashi, Hideo

1987-01-01

In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

Ternary graphene/amorphous carbon/nickel nanocomposite film for outstanding superhydrophobicity

Science.gov (United States)

Zhu, Xiaobo; Zhou, Shengguo; Yan, Qingqing

2018-04-01

A novel superhydrophobic ternary graphene/amorphous carbon/nickel (G-Ni/a-C:H) carbon-based film was fabricated by a green approach of high-voltage electrochemical deposition without using aqueous solution, which was systematically investigated including the structure and relating applications on self-cleaning and corrosion resistance. Graphene and nickel nano-particle inserts were effective to tailor the feature of nanocrystallite/amorphous microstructure as well as micro-nanoscale hierarchical rose-petal-like surface for G-Ni/a-C:H carbon-based film. Surprisingly, this deposit could present outstanding superhydrophobicity with the contact angle of 158.98 deg and sliding angle of 2.75 deg without any further surface modification meanwhile it could possess fairly well adhesion. Furthermore, the superhydrophobic G-Ni/a-C:H carbon-based film could exhibit excellent corrosion resistance and self-cleaning performances compared to no graphene incorporated deposit. The procedure of fabricating deposit might be simple, scalable, and environmental friendly, indicating a promising prospect for industrial applications in the field of anti-fouling, anti-corrosion and drag resistance.

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Clean-lifting transfer of large-area residual-free graphene films.

Science.gov (United States)

Wang, Di-Yan; Huang, I-Sheng; Ho, Po-Hsun; Li, Shao-Sian; Yeh, Yun-Chieh; Wang, Duan-Wei; Chen, Wei-Liang; Lee, Yu-Yang; Chang, Yu-Ming; Chen, Chia-Chun; Liang, Chi-Te; Chen, Chun-Wei

2013-08-27

A unique "clean-lifting transfer" (CLT) technique that applies a controllable electrostatic force to transfer large-area and high-quality CVD-grown graphene onto various rigid or flexible substrates is reported. The CLT technique without using any organic support or adhesives can produce residual-free graphene films with large-area processability, and has great potential for future industrial production of graphene-based electronics or optoelectronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of thickness on optical properties of thermally evaporated SnS films

International Nuclear Information System (INIS)

Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

2013-01-01

The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

High-performance metal mesh/graphene hybrid films using prime-location and metal-doped graphene.

Science.gov (United States)

Min, Jung-Hong; Jeong, Woo-Lim; Kwak, Hoe-Min; Lee, Dong-Seon

2017-08-31

We introduce high-performance metal mesh/graphene hybrid transparent conductive layers (TCLs) using prime-location and metal-doped graphene in near-ultraviolet light-emitting diodes (NUV LEDs). Despite the transparency and sheet resistance values being similar for hybrid TCLs, there were huge differences in the NUV LEDs' electrical and optical properties depending on the location of the graphene layer. We achieved better physical stability and current spreading when the graphene layer was located beneath the metal mesh, in direct contact with the p-GaN layer. We further improved the contact properties by adding a very thin Au mesh between the thick Ag mesh and the graphene layer to produce a dual-layered metal mesh. The Au mesh effectively doped the graphene layer to create a p-type electrode. Using Raman spectra, work function variations, and the transfer length method (TLM), we verified the effect of doping the graphene layer after depositing a very thin metal layer on the graphene layers. From our results, we suggest that the nature of the contact is an important criterion for improving the electrical and optical performance of hybrid TCLs, and the method of doping graphene layers provides new opportunities for solving contact issues in other semiconductor devices.

Flexible free-standing TiO2/graphene/PVdF films as anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Ren, H.M.; Ding, Y.H.; Chang, F.H.; He, X.; Feng, J.Q.; Wang, C.F.; Jiang, Y.; Zhang, P.

2012-01-01

Highlights: ► Flexible TiO 2 /graphene electrode was prepared by a solvent evaporation technique. ► PVdF was used as substance to support the TiO 2 /graphene active materials. ► The flexible films can be employed as anode materials for Li-ion battery. - Abstract: Graphene composites were prepared by hydrothermal method using titanium dioxide (TiO 2 ) adsorbed graphene oxide (GO) sheets as precursors. Free-standing hybrid films for lithium-ion batteries were prepared by adding TiO 2 /graphene composites to the polyvinylidene fluoride (PVdF)/N-methyl-2-pyrrolidone (NMP) solution, followed by a solvent evaporation technique. These films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), scanning electron microscopy (SEM) and various electrochemical techniques. Flexible films show an excellent cycling performance, which was attributed to the interconnected graphene conducting network, which depressed the increasing of electric resistance during the cycling.

Direct electrochemistry and electrocatalysis of hemoglobin protein entrapped in graphene and chitosan composite film.

Science.gov (United States)

Xu, Huifeng; Dai, Hong; Chen, Guonan

2010-04-15

A novel, biocompatible sensing strategy based on graphene and chitosan composite film for immobilizing the hemoglobin protein was firstly adopted. The direct electron transfer and bioelectrocatalytic activity of hemoglobin after incorporation into the composite film were investigated. A pair of reversible redox waves of hemoglobin was appeared, and hemoglobin could exhibit its bioelectrocatalytic activity toward H(2)O(2) in a long term. Such results indicated that graphene and chitosan composite could be a friendly biocompatible interface for immobilizing biomolecules and keeping their native structure. Furthermore, the appearance of graphene in the composite film could facilitate the electron transfer between matrix and the electroactive center of hemoglobin. Hence, this graphene and chitosan based protocol would be a promising platform for protein immobilization and biosensor preparation. (c) 2010 Elsevier B.V. All rights reserved.

Graphene Squeeze-Film Pressure Sensors.

Science.gov (United States)

Dolleman, Robin J; Davidovikj, Dejan; Cartamil-Bueno, Santiago J; van der Zant, Herre S J; Steeneken, Peter G

2016-01-13

The operating principle of squeeze-film pressure sensors is based on the pressure dependence of a membrane's resonance frequency, caused by the compression of the surrounding gas which changes the resonator stiffness. To realize such sensors, not only strong and flexible membranes are required, but also minimization of the membrane's mass is essential to maximize responsivity. Here, we demonstrate the use of a few-layer graphene membrane as a squeeze-film pressure sensor. A clear pressure dependence of the membrane's resonant frequency is observed, with a frequency shift of 4 MHz between 8 and 1000 mbar. The sensor shows a reproducible response and no hysteresis. The measured responsivity of the device is 9000 Hz/mbar, which is a factor 45 higher than state-of-the-art MEMS-based squeeze-film pressure sensors while using a 25 times smaller membrane area.

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

High-throughput measurement of polymer film thickness using optical dyes

Science.gov (United States)

Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

2005-01-01

Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

Experimental study of the effect of the reduced graphene oxide films on nucleate boiling performances of inclined surfaces

International Nuclear Information System (INIS)

Kim, Ji Hoon; Kong, Byeong Tak; Kim, Ji Min

2016-01-01

For the enhancing the CHF, surface coating techniques are available. Yang et al. performed small scale boiling experiments for the vessel lower head, which was coated by aluminum/copper micro particles. Recently, graphene has received much attention for applications in thermal engineering due to its large thermal conductivity. Ahn et al. used a silicon dioxide substrate, which was coated graphene films, as a heating surface during pool boiling experiments. The graphene films inhibited the formation of hot spots, increasing the CHF. For applying novel material 'Graphene' in nuclear industry, here we investigated the effects of graphene film coatings on boiling performances. The experimental pool boiling facility, copying the geometry of lower head of reactor, was designed for verifying orientation effects. The effects of graphene films coating on varied inclined heater surfaces were investigated. The CHF values were increased at every case, but the increased amounts were decreased for downward heater surfaces. At the downward-facing region, however, coating the RGO films would change the CHF mechanisms and boiling heat transfer performances. Generally, RGO films, made by colloidal fabrication, has defects on each flakes.

Oleic acid-assisted exfoliated few layer graphene films as counter electrode in dye-sensitized solar cell

International Nuclear Information System (INIS)

Liu, Jincheng; Wang, Yinjie; Sun, Darren Delai

2012-01-01

Highlights: ► Few layer graphene was obtained by liquid exfoliation in oleic acid (OLA). ► The concentration of exfoliated few layer graphene is as high as 1.3 mg/mL. ► OLA-assisted graphite (OLA-G) film has high catalytic activity. ► A power conversion efficiency of 3.56% can be gained by DSSCs with the counter electrode of OLA-G film. - Abstract: We have demonstrated a facile sonication method to exfoliate graphite into few layer graphene with a high concentration of 1.3 mg/mL in oleic acid (OLA). The exfoliations of natural graphite in oleylamine (OA) and trioctylphosphine (TOP) are investigated as a comparison. The few layer graphene dispersion in OLA and the graphite nanoparticles in OA are confirmed by transmission electron microscopy (TEM) observation. The exfoliated graphene dispersion in OLA (OLA-G) and graphite dispersion in OA (OA-G) are fabricated into a film on the FTO substrate by the doctor-blading method. The morphology and catalytic activity in the redox couple regeneration of all the graphite films are examined by field emission scanning electron microscopy and cyclic voltammograms. The OLA-G films on FTO glass with few layer graphene flakes shows better catalytic activity than the OA-G films. The energy conversion efficiency of the cell with the OLA-G film as counter electrode reached 3.56%, which is 70% of dye-sensitized solar cell (DSSC) with the sputtering-Pt counter electrode under the same experimental condition.

Optical and structural properties of ZnO nanorods grown on graphene oxide and reduced graphene oxide film by hydrothermal method

Energy Technology Data Exchange (ETDEWEB)

Alver, U., E-mail: alver@ksu.edu.tr [Department of Physics, Kahramanmaras Sutcu Imam University, K. Maras 46100 (Turkey); Zhou, W.; Belay, A.B. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States); Krueger, R. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Davis, K.O.; Hickman, N.S. [Nanoscience and Technology Center, University of Central Florida, Orlando, FL 32816 (United States); Florida Solar Energy Center, Cocoa, FL 32922 (United States)

2012-01-15

ZnO nanorods were grown on graphene oxide (GO) and reduced graphene oxide (RGO) films with seed layers by using simple hydrothermal method. The GO films were deposited by spray coating and then annealed at 400 Degree-Sign C in argon atmosphere to obtain RGO films. The optical and structural properties of the ZnO nanorods were systematically studied by scanning electron microscopy (SEM), X-ray diffraction (XRD) and ultraviolet-visible spectroscopy. The XRD patterns and SEM images show that without a seed layer, no ZnO nanorod deposition occurs on GO or RGO films. Transmittance of ZnO nanorods grown on RGO films was measured to be approximately 83% at 550 nm. Furthermore, while transmittance of RGO films increases with ZnO nanorod deposition, transmittance of GO decreases.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

Science.gov (United States)

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films

International Nuclear Information System (INIS)

Marta, Bogdan; Leordean, Cosmin; Istvan, Todor; Botiz, Ioan; Astilean, Simion

2016-01-01

Graphical abstract: - Highlights: • One-step dry transfer method of CVD grown graphene onto PVA films. • Investigation of graphene quality and number of layers of the synthesized and transferred graphene. • Promising scalability and good quality of transferred graphene onto flexible transparent polymers. - Abstract: Graphene transfer is a procedure of paramount importance for the production of graphene-based electronic devices. The transfer procedure can affect the electronic properties of the transferred graphene and can be detrimental for possible applications both due to procedure induced defects which can appear and due to scalability of the method. Hence, it is important to investigate new transfer methods for graphene that are less time consuming and show great promise. In the present study we propose an efficient, etching-free transfer method that consists in applying a thin polyvinyl alcohol layer on top of the CVD grown graphene on Cu and then peeling-off the graphene onto the polyvinyl alcohol film. We investigate the quality of the transferred graphene before and after the transfer, using Raman spectroscopy and imaging as well as optical and atomic force microscopy techniques. This simple transfer method is scalable and can lead to complete transfer of graphene onto flexible and transparent polymer support films without affecting the quality of the graphene during the transfer procedure.

Efficient etching-free transfer of high quality, large-area CVD grown graphene onto polyvinyl alcohol films

Energy Technology Data Exchange (ETDEWEB)

Marta, Bogdan; Leordean, Cosmin [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Istvan, Todor [Babes-Bolyai University, Faculty of Physics, Biomolecular Physics Department, M Kogalniceanu Str. 1, Cluj-Napoca 400084 (Romania); Botiz, Ioan [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Astilean, Simion, E-mail: simion.astilean@phys.ubbcluj.ro [Babes-Bolyai University, Interdisciplinary Research Institute in Bio-Nano-Sciences, Nanobiophotonics and Laser Microspectroscopy Center, Treboniu Laurian Str. 42, Cluj-Napoca 400271 (Romania); Babes-Bolyai University, Faculty of Physics, Biomolecular Physics Department, M Kogalniceanu Str. 1, Cluj-Napoca 400084 (Romania)

2016-02-15

Graphical abstract: - Highlights: • One-step dry transfer method of CVD grown graphene onto PVA films. • Investigation of graphene quality and number of layers of the synthesized and transferred graphene. • Promising scalability and good quality of transferred graphene onto flexible transparent polymers. - Abstract: Graphene transfer is a procedure of paramount importance for the production of graphene-based electronic devices. The transfer procedure can affect the electronic properties of the transferred graphene and can be detrimental for possible applications both due to procedure induced defects which can appear and due to scalability of the method. Hence, it is important to investigate new transfer methods for graphene that are less time consuming and show great promise. In the present study we propose an efficient, etching-free transfer method that consists in applying a thin polyvinyl alcohol layer on top of the CVD grown graphene on Cu and then peeling-off the graphene onto the polyvinyl alcohol film. We investigate the quality of the transferred graphene before and after the transfer, using Raman spectroscopy and imaging as well as optical and atomic force microscopy techniques. This simple transfer method is scalable and can lead to complete transfer of graphene onto flexible and transparent polymer support films without affecting the quality of the graphene during the transfer procedure.

Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique

Science.gov (United States)

Zhang, Rui; Chen, Fenghua; Wang, Jinbin; Fu, Dejun

2018-03-01

Here we demonstrate the synthesis of graphene directly on SiC substrates at 900 °C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8 nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16 keV with the dosage of 4 × 1016 atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.

Transfer-free synthesis of doped and patterned graphene films.

Science.gov (United States)

Zhuo, Qi-Qi; Wang, Qi; Zhang, Yi-Ping; Zhang, Duo; Li, Qin-Liang; Gao, Chun-Hong; Sun, Yan-Qiu; Ding, Lei; Sun, Qi-Jun; Wang, Sui-Dong; Zhong, Jun; Sun, Xu-Hui; Lee, Shuit-Tong

2015-01-27

High-quality and wafer-scale graphene on insulating gate dielectrics is a prerequisite for graphene electronic applications. For such applications, graphene is typically synthesized and then transferred to a desirable substrate for subsequent device processing. Direct production of graphene on substrates without transfer is highly desirable for simplified device processing. However, graphene synthesis directly on substrates suitable for device applications, though highly demanded, remains unattainable and challenging. Here, we report a simple, transfer-free method capable of synthesizing graphene directly on dielectric substrates at temperatures as low as 600 °C using polycyclic aromatic hydrocarbons as the carbon source. Significantly, N-doping and patterning of graphene can be readily and concurrently achieved by this growth method. Remarkably, the graphene films directly grown on glass attained a small sheet resistance of 550 Ω/sq and a high transmittance of 91.2%. Organic light-emitting diodes (OLEDs) fabricated on N-doped graphene on glass achieved a current density of 4.0 mA/cm(2) at 8 V compared to 2.6 mA/cm(2) for OLEDs similarly fabricated on indium tin oxide (ITO)-coated glass, demonstrating that the graphene thus prepared may have potential to serve as a transparent electrode to replace ITO.

Nano-Hydroxyapatite Thick Film Gas Sensors

International Nuclear Information System (INIS)

Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

2011-01-01

In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

OpenAIRE

Ruijin Hong; Jialin Ji; Chunxian Tao; Daohua Zhang; Dawei Zhang

2017-01-01

Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO) and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD), optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B ...

Cataphoretic assembly of cationic dyes and deposition of carbon nanotube and graphene films.

Science.gov (United States)

Su, Y; Zhitomirsky, I

2013-06-01

Cathodic electrophoretic deposition (EPD) method has been developed for the fabrication of thin films from aqueous solutions of crystal violet (CV) dyes. The films contained rod-like particles with a long axis oriented perpendicular to the substrate surface. The proposed deposition mechanism involved cataphoresis of cationic CV(+) species, base generation in the cathodic reactions, and charge neutralization at the electrode surface. The assembly of rod-like particles was governed by π-π interactions of polyaromatic CV molecules. The deposition kinetics was studied by quartz crystal microbalance. CV dyes allowed efficient dispersion of multiwalled carbon nanotubes (MWCNTs) and graphene in water at relatively low CV concentrations. The feasibility of cathodic EPD of MWCNT and graphene from aqueous suspensions, containing CV, has been demonstrated. The deposition yield was investigated at different CV concentrations and deposition voltages. The relatively high deposition yield of MWCNT and graphene indicated that CV is an efficient dispersing, charging, and film forming agent for EPD. Electron microscopy data showed that at low CV concentrations in MWCNT or graphene suspensions and low deposition voltages, the films contained mainly MWCNT or graphene. The increase in the CV concentration and/or deposition voltage resulted in enhanced co-deposition of CV. The EPD method developed in this investigation paves the way for the fabrication of advanced nanocomposites by cathodic electrodeposition. Copyright © 2013 Elsevier Inc. All rights reserved.

Self-Poling of BiFeO3 Thick Films.

Science.gov (United States)

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Self-assembled graphene/azo polyelectrolyte multilayer film and its application in electrochemical energy storage device.

Science.gov (United States)

Wang, Dongrui; Wang, Xiaogong

2011-03-01

Graphene/azo polyelectrolyte multilayer films were fabricated through electrostatic layer-by-layer (LbL) self-assembly, and their performance as electrochemical capacitor electrode was investigated. Cationic azo polyelectrolyte (QP4VP-co-PCN) was synthesized through radical polymerization, postpolymerization azo coupling reaction, and quaternization. Negatively charged graphene nanosheets were prepared by a chemically modified method. The LbL films were obtained by alternately dipping a piece of the pretreated substrates in the QP4VP-co-PCN and nanosheet solutions. The processes were repeated until the films with required numbers of bilayers were obtained. The self-assembly and multilayer surface morphology were characterized by UV-vis spectroscopy, AFM, SEM, and TEM. The performance of the LbL films as electrochemical capacitor electrode was estimated using cyclic voltammetry. Results show that the graphene nanosheets are densely packed in the multilayers and form random graphene network. The azo polyelectrolyte cohesively interacts with the nanosheets in the multilayer structure, which prevents agglomeration of graphene nanosheets. The sheet resistance of the LbL films decreases with the increase of the layer numbers and reaches the stationary value of 1.0 × 10(6) Ω/square for the film with 15 bilayers. At a scanning rate of 50 mV/s, the LbL film with 9 bilayers shows a gravimetric specific capacitance of 49 F/g in 1.0 M Na(2)SO(4) solution. The LbL films developed in this work could be a promising type of the electrode materials for electric energy storage devices.

Hierarchical porous graphene/polyaniline composite film with superior rate performance for flexible supercapacitors.

Science.gov (United States)

Meng, Yuena; Wang, Kai; Zhang, Yajie; Wei, Zhixiang

2013-12-23

A highly flexible graphene free-standing film with hierarchical structure is prepared by a facile template method. With a porous structure, the film can be easily bent and cut, and forms a composite with another material as a scaffold. The 3D graphene film exhibits excellent rate capability and its capacitance is further improved by forming a composite with polyaniline nanowire arrays. The flexible hierarchical composite proves to be an excellent electrode material for flexible supercapacitors. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The influence of the preparation conditions on structure and optical properties of solid films of graphene oxide

International Nuclear Information System (INIS)

Seliverstova, E; Ibrayev, N; Dzhanabekova, R; Gladkova, V

2016-01-01

In this study, we investigated the physico-chemical properties of graphene oxide monolayers at the interface water-air. Monolayers were formed by the spreading of dispersion of graphene oxide in acetone and THF. It was found than graphene monolayers are in the “liquid” state on the surface of subphase. Monolayers were transferred onto solid substrates according to Langmuir-Blodgett (LB) method. SEM images show that the films have an island structure. The films obtained from acetone solutions are more uniform, which makes them more promising in terms of their use as conductive coatings. Absorption spectrum of graphene LB films exhibits a broad band in the ultraviolet and visible region of the spectrum. The optical density of the film obtained from acetone solution is greater than the optical density of the film prepared from THF. In the visible region of the spectrum both films have high transparency. (paper)

Measurement of the thickness of thin films by backscattered protons

International Nuclear Information System (INIS)

Samaniego, L.E.Q.

1976-07-01

The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

International Nuclear Information System (INIS)

Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

2011-01-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

Science.gov (United States)

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

Plasma assisted fabrication of multi-layer graphene/nickel hybrid film as enhanced micro-supercapacitor electrodes

Science.gov (United States)

Ding, Q.; Li, W. L.; Zhao, W. L.; Wang, J. Y.; Xing, Y. P.; Li, X.; Xue, T.; Qi, W.; Zhang, K. L.; Yang, Z. C.; Zhao, J. S.

2017-03-01

A facile synthesis strategy has been developed for fabricating multi-layer graphene/nickel hybrid film as micro-supercapacitor electrodes by using plasma enhanced chemical vapor deposition. The as-presented method is advantageous for rapid graphene growth at relatively low temperature of 650 °C. In addition, after pre-treating for the as-deposited nickel film by using argon plasma bombardment, the surface-to-volume ratio of graphene film on the treated nickel substrate is effectively increased by the increasing of surface roughness. This is demonstrated by the characterization results from transmission electron microscopy, scanning electron microscope and atomic force microscopy. Moreover, the electrochemical performance of the resultant graphene/nickel hybrid film as micro-supercapacitor working electrode was investigated by cyclic voltammetry and galvanostatic charge/discharge measurements. It was found that the increase of the surface-to-volume ratio of graphene/nickel hybrid film improved the specific capacitance of 10 times as the working electrode of micro-supercapacitor. Finally, by using comb columnar shadow mask pattern, the micro-supercapacitor full cell device was fabricated. The electrochemical performance measurements of the micro-supercapacitor devices indicate that the method presented in this study provides an effective way to fabricate micro-supercapacitor device with enhanced energy storage property.

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

KAUST Repository

Sarath Kumar, S. R.

2013-11-07

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Science.gov (United States)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Experimental study of the effect of the reduced graphene oxide films on nucleate boiling performances of inclined surfaces

Energy Technology Data Exchange (ETDEWEB)

Kim, Ji Hoon; Kong, Byeong Tak [Incheon National University, Incheon (Korea, Republic of); Kim, Ji Min [POSTECH, Pohang (Korea, Republic of); and others

2016-05-15

For the enhancing the CHF, surface coating techniques are available. Yang et al. performed small scale boiling experiments for the vessel lower head, which was coated by aluminum/copper micro particles. Recently, graphene has received much attention for applications in thermal engineering due to its large thermal conductivity. Ahn et al. used a silicon dioxide substrate, which was coated graphene films, as a heating surface during pool boiling experiments. The graphene films inhibited the formation of hot spots, increasing the CHF. For applying novel material 'Graphene' in nuclear industry, here we investigated the effects of graphene film coatings on boiling performances. The experimental pool boiling facility, copying the geometry of lower head of reactor, was designed for verifying orientation effects. The effects of graphene films coating on varied inclined heater surfaces were investigated. The CHF values were increased at every case, but the increased amounts were decreased for downward heater surfaces. At the downward-facing region, however, coating the RGO films would change the CHF mechanisms and boiling heat transfer performances. Generally, RGO films, made by colloidal fabrication, has defects on each flakes.

Intrinsic flux pinning mechanisms in different thickness MgB2 films

Directory of Open Access Journals (Sweden)

C. Yang

2017-03-01

Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

Science.gov (United States)

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

2014-08-01

We report the appearance of ferromagnetism in thin films of Pd(100), which depends on film thickness in the range of 3-5 nm on SrTiO3(100) substrates. X-ray magnetic circular dichroism measurement shows the intrinsic nature of ferromagnetism in Pd(100) films. The spontaneous magnetization in Pd(100) films, corresponding to is 0.61μB/atom, is comparable to Ni, and it changes in an oscillatory manner depending on film thickness, where the period quantitatively agrees with the theoretical prediction based on the two-dimensional quantum well in the film. This indicates that the discrete electronic states in the quantum well shift to Fermi energy to satisfy the condition for ferromagnetism (Stoner criterion) at a specific film thickness.

Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

Directory of Open Access Journals (Sweden)

Prashanta Dhoj Adhikari

2014-01-01

Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

Fabrication of Au/graphene oxide/Ag sandwich structure thin film and its tunable energetics and tailorable optical properties

Directory of Open Access Journals (Sweden)

Ruijin Hong

2017-01-01

Full Text Available Au/graphene oxide/Ag sandwich structure thin film was fabricated. The effects of graphene oxide (GO and bimetal on the structure and optical properties of metal silver films were investigated by X-ray diffraction (XRD, optical absorption, and Raman intensity measurements, respectively. Compared to silver thin film, Au/graphene oxide/Ag sandwich structure composite thin films were observed with wider optical absorption peak and enhanced absorption intensity. The Raman signal for Rhodamine B molecules based on the Au/graphene oxide/Ag sandwich nanostructure substrate were obviously enhanced due to the bimetal layer and GO layer with tunable absorption intensity and fluorescence quenching effects.

A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

OpenAIRE

Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

2001-01-01

A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide

DEFF Research Database (Denmark)

Sun, Jie; Lindvall, Niclas; Cole, Matthew T.

2012-01-01

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes...

Graphene derivatives/Fe_3O_4/polymer nanocomposite films: Optical and electrical properties

International Nuclear Information System (INIS)

Hatel, Rhizlane; Goumri, Meryem; Ratier, Bernard; Baitoul, Mimouna

2017-01-01

This paper reports a simple solution casting method for the preparation of nanocomposite films in which graphene oxide (GO)/Fe_3O_4 nanocomposites are incorporated into poly (vinyl alcohol) (PVA) matrix. The films obtained with different weight percent of GO/Fe_3O_4 (0.5, 0.7 and 1 wt%) are subjected an in situ chemical and thermal reduction in order to explore the evolution and interactions between these components under different treatments and get an insight into on how this can affects the optical and electrical properties of these nanocomposites. Characterization was carried out using, UV–Vis absorption, Photoluminescence, electrical conductivity measurements, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Strong covalent functionalization occurs between the polymer and graphene derivatives (GD)/Fe_3O_4 hybrids. The experimental results obtained for our nanocomposites films exhibit significant enhancement in properties highlighted the efficiency of the in situ thermal reduction. The high absorption with strong photoluminescence and electrical conductivity achieved might promote these nanocomposites for opto-electronic devices in near future. - Highlights: • Novel inorganic-organic hybrid flexible films were successfully prepared. • Good interfacial interaction between the graphene/Fe_3O_4 and the hydroxyl-rich PVA. • Optical and electrical properties of Graphene Derivatives/Fe_3O_4/PVA were investigated. • Thermally reduced GO/Fe_3O_4/PVA films show high absorption and strong photoluminescence.

Fabrication of transparent cellulose acetate/graphene oxide nanocomposite film for UV shielding

Energy Technology Data Exchange (ETDEWEB)

Jahan, Nusrat; Khan, Wasi, E-mail: wasiamu@gmail.com; Azam, Ameer; Naqvi, A. H. [Department of Applied Physics, Z.H. College of Engineering & Technology, Aligarh Muslim University, Aligarh - 202002 (India)

2016-05-23

In this work, we have fabricated transparent cellulose acetate/graphene oxide nanocomposite (CAGONC) films for ultraviolet radiations (UVR) shielding. Graphene oxide (GO) was synthesized by modified Hummer’s method and CAGONC films were fabricated by solvent casting method. The films were analyzed using characterization techniques like x-ray diffraction (XRD), energy dispersive x-ray (EDX) equipped scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy and ultra-violet visible (UV-VIS) spectroscopy. Four films were prepared by varying the wt% of GO (0.1wt%, 0.2wt% and 0.3wt%) with respect to cellulose acetate (CA). UV-vis measurements exhibit optical transparency in the range of 76-99% for visible light while ultra-violet radiation was substantially shielded.

Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

Science.gov (United States)

Xu, Jianbao; Hu, Junxiong; Li, Qi; Wang, Rubing; Li, Weiwei; Guo, Yufen; Zhu, Yongbo; Liu, Fengkui; Ullah, Zaka; Dong, Guocai; Zeng, Zhongming; Liu, Liwei

2017-07-01

Chemical vapor deposition (CVD) growth of high-quality graphene has emerged as the most promising technique in terms of its integrated manufacturing. However, there lacks a controllable growth method for producing high-quality and a large-quantity graphene films, simultaneously, at a fast growth rate, regardless of roll-to-roll (R2R) or batch-to-batch (B2B) methods. Here, a stationary-atmospheric-pressure CVD (SAPCVD) system based on thermal molecular movement, which enables fast B2B growth of continuous and uniform graphene films on tens of stacked Cu(111) foils, with a growth rate of 1.5 µm s -1 , is demonstrated. The monolayer graphene of batch production is found to nucleate from arrays of well-aligned domains, and the films possess few defects and exhibit high carrier mobility up to 6944 cm 2 V -1 s -1 at room temperature. The results indicate that the SAPCVD system combined with single-domain Cu(111) substrates makes it possible to realize fast batch-growth of high-quality graphene films, which opens up enormous opportunities to use this unique 2D material for industrial device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superlubricating graphene and graphene oxide films

Science.gov (United States)

Sumant, Anirudha V.; Erdemir, Ali; Choi, Junho; Berman, Diana

2018-02-13

A system and method for forming at least one of graphene and graphene oxide on a substrate and an opposed wear member. The system includes graphene and graphene oxide formed by an exfoliation process or solution processing method to dispose graphene and/or graphene oxide onto a substrate. The system further includes an opposing wear member disposed on another substrate and a gas atmosphere of an inert gas like N2, ambient, a humid atmosphere and a water solution.

Fabrication and application of flexible graphene silk composite film electrodes decorated with spiky Pt nanospheres

Science.gov (United States)

Liang, Bo; Fang, Lu; Hu, Yichuan; Yang, Guang; Zhu, Qin; Ye, Xuesong

2014-03-01

A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a sensitivity of 0.56 mA mM-1 cm-2, a linear range of 0-2.5 mM and an ultralow detection limit of 0.2 μM (S/N = 3). A glucose biosensor electrode was further fabricated by enzyme immobilization. The results show a sensitivity of 150.8 μA mM-1 cm-2 and a low detection limit of 1 μM (S/N = 3) for glucose detection. The strategy of coating graphene sheets on a silk fibre surface provides a new approach for developing electrically conductive biomaterials, tissue engineering scaffolds, bendable electrodes, and wearable biomedical devices.A free-standing graphene silk composite (G/S) film was fabricated via vacuum filtration of a mixed suspension of graphene oxide and silk fibres, followed by chemical reduction. Spiky structured Pt nanospheres were grown on the film substrate by cyclic voltammetry electrodeposition. The electrical and mechanical performance of a single graphene coated silk fibre was investigated. The conductivity of a single graphene coated silk fibre is 57.9 S m-1. During 1000 bending measurements, the conductivity was stable and showed negligible variation. The G/S film has a sheet resistivity of 90 Ω □-1 with a porous and hierarchical structure. The spiky Pt nanosphere decorated G/S film was directly used as a H2O2 electrode with a

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Microstructure and corrosion resistance of a fluorosilane modified silane-graphene film on 2024 aluminum alloy

Science.gov (United States)

Dun, Yuchao; Zhao, Xuhui; Tang, Yuming; Dino, Sahib; Zuo, Yu

2018-04-01

Heptadecafluorodecyl trimethoxysilane (FAS-17) was incorporated into γ-(2,3-epoxypropoxy) propyltrimethoxysilane/graphene (GPTMS/rGO) by adding pre-hydrolyzed FAS-17 solution in GPTMS solution, and a hybrid silane-graphene film (FG/rGO) was prepared on 2024 aluminum alloy surface. The FG/rGO film showed better thermal shock resistance, good adhesion force and high micro-hardness, compared with GPTMS/rGO film. In neutral 3.5 wt% NaCl solution, the corrosion current density for 2024 AA sample with FG/rGO film was 3.40 × 10-3 μA/cm2, which is about one fifth of that for the sample with GPTMS/rGO film. In acidic and alkaline NaCl solutions, the FG/rGO film also showed obviously better corrosion resistance than GPTMS/rGO film. EIS results confirm that the FG/rGO film showed longer performance than GPTMS/rGO film for 2024 AA in NaCl solution. The hydrophobic FAS-17 increased water contact angle of the film surface from 68° to 113°, and changed the stacking structure of graphene in the film. The higher crosslink degree and less interfaces promoted the barrier property of FG/rGO film against aggressive ions and prolonged the performance time in NaCl solution.

Local mechanical and electromechanical properties of the P(VDF-TrFE)-graphene oxide thin films

Science.gov (United States)

Silibin, M. V.; Bystrov, V. S.; Karpinsky, D. V.; Nasani, N.; Goncalves, G.; Gavrilin, I. M.; Solnyshkin, A. V.; Marques, P. A. A. P.; Singh, Budhendra; Bdikin, I. K.

2017-11-01

Recently, many organic materials, including carbon materials such as carbon nanotubes (CNTs) and graphene (single-walled carbon sheet structure) were studied in order to improve their mechanical and electrical properties. In particular, copolymers of poly (vinylidene fluoride) and poly trifluoroethylene [P(VDF-TrFE)] are promising materials, which can be used as probes, sensors, actuators, etc. Composite thin film of the copolymer P(VDF-TrFE) with graphene oxide (GO) were prepared by spin coating. The obtained films were investigated using piezoresponse force microscopy (PFM). The switching behavior, piezoelectric response, dielectric permittivity and mechanical properties of the films were found to depend on the presence of GO. For understanding the mechanism of piezoresponse evolution of the composite we used models of PVDF chain, its behavior in electrical field and computed the data for piezoelectric coefficients using HyperChem software. The summarized models of graphene oxide based on graphene layer from 96 carbon atoms C: with oxygen and OH groups and with COOH groups arranged by hydrogen were used for PVDF/Graphene oxide complex: 1) with H-side (hydrogen atom) connected from PVDF to graphene oxide, 2) with F-side (fluorine atom) connected from PVDF graphene oxide and 3) Graphene Oxide/PVDF with both sides (sandwich type). Experimental results qualitatively correlate with those obtained in the calculations.

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

International Nuclear Information System (INIS)

Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

2008-01-01

Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

Electrografting of N’,N’-dimethylphenothiazin-5-ium-3,7-diamine (Azure A) diazonium salt forming electrocatalytic organic films on gold or graphene oxide gold hybrid electrodes

International Nuclear Information System (INIS)

Gómez-Anquela, C.; Revenga-Parra, M.; Abad, J.M.; Marín, A. García; Pau, J.L.; Pariente, F.; Piqueras, J.; Lorenzo, E.

2014-01-01

Electroactive films containing redox active phenothiazine moieties are covalently bound onto gold and graphene oxide gold hybrid electrodes, using reductive redox grafting of N’,N’-dimethylphenothiazin-5-ium-3,7-diamine (Azure A) diazonium salt. The grafting procedure is based on continuous voltammetric potential sweep of solutions containing the phenothiazine diazonium salt previously generated in situ. Control of the film thickness, electroactivity and stability can easily be exerted through appropriate choice of the concentration and number of potential scans performed. Cyclic Voltammetry, Electrochemical Quartz Crystal Microbalance (EQCM) and Spectroscopic Ellipsometry are used to characterize the growth process as well as the viscoelastic properties of the resulting stable electrografted films. The electron transfer reactions through the films are mediated by the presence of the Azure A redox moieties, which show a quasi-reversible electrochemical response and exhibit a potent electrocatalytic effect toward the oxidation of NADH. This electrocatalytic model has been used to compare the properties of Azure A electrografted films generated on gold electrodes with those obtained on hybrid electrodes composed by graphene oxide modified gold electrodes

Thickness dependent ferromagnetism in thermally decomposed NiO thin films

Energy Technology Data Exchange (ETDEWEB)

Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in

2016-11-15

We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50–300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (T{sub A}) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing T{sub A}, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing T{sub A} and changing annealing conditions. - Highlights: • Preparation of highly strained single layer NiO films with different thicknesses. • Study the effects of annealing under different environments on crystal structure. • Understanding the origin of thickness dependent thermal decomposition reaction. • Investigate the role of thermal decomposition reaction on the magnetic properties. • Study the interaction between NiO and Ni phases on the exchange bias mechanism.

A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

International Nuclear Information System (INIS)

Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

1977-01-01

The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

Free standing graphene oxide film for hydrogen peroxide sensing

Science.gov (United States)

Ranjan, Pranay; Balakrishnan, Jayakumar; Thakur, Ajay D.

2018-05-01

We report hydrogen peroxide (H2O2)sensing using free standing graphene oxide thin films prepared using a cost effective scalable approach. Such sensors may find application in pharmaceutical and food processing industries.

Growth Mechanism for Low Temperature PVD Graphene Synthesis on Copper Using Amorphous Carbon

Science.gov (United States)

Narula, Udit; Tan, Cher Ming; Lai, Chao Sung

2017-03-01

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

Ultrafast demagnetisation dependence on film thickness: A TDDFT calculation

Science.gov (United States)

Singh, N.; Sharma, S.

2018-04-01

Ferromagnetic materials when subjected to intense laser pulses leads to reduction of their magnetisation on an ultrafast scale. Here, we perform an ab-initio calculation to study the behavior of ultrafast demagnetisation as a function of film thickness for Nickel as compared to the bulk of the material. In thin films surface formation results in amplification of demagnetisation with the percentage of demagnetisation depending upon the film thickness.

Layer-by-layer self-assembled multilayer films composed of graphene/polyaniline bilayers: high-energy electrode materials for supercapacitors.

Science.gov (United States)

Sarker, Ashis K; Hong, Jong-Dal

2012-08-28

Multilayer assemblies of uniform ultrathin film electrodes with good electrical conductivity and very large surface areas were prepared for use as electrochemical capacitors. A layer-by-layer self-assembly approach was employed in an effort to improve the processability of highly conducting polyaniline (PANi) and chemically modified graphene. The electrochemical properties of the multilayer film (MF-) electrodes, including the sheet resistance, volumetric capacitance, and charge/discharge ratio, were determined by the morphological modification and the method used to reduce the graphene oxide (GO) to reduced graphene oxide (RGO) in the multilayer films. The PANi and GO concentrations could be modulated to control the morphology of the GO monolayer film in the multilayer assemblies. Optical ellipsometry was used to determine the thickness of the GO film in a single layer (1.32 nm), which agreed well with the literature value (~1.3 nm). Hydroiodic acid (HI), hydrazine, or pyrolysis were tested for the reduction of GO to RGO. HI was found to be the most efficient technique for reducing the GO to RGO in the multilayer assemblies while minimizing damage to the virgin state of the acid-doped PANi. Ultimately, the MF-electrode, which could be optimized by fine-tuning the nanostructure and selecting a suitable reduction method, exhibited an excellent volumetric capacitance, good cycling stability, and a rapid charge/discharge rate, which are required for supercapacitors. A MF-electrode composed of 15 PANi/RGO bilayers yielded a volumetric capacitance of 584 F/cm(3) at a current density of 3.0 A/cm(3). Although this value decreased exponentially as the current density increased, approaching a value of 170 F/cm(3) at 100 A/cm(3), this volumetric capacitance is one of the best yet reported for the other carbon-based materials. The intriguing features of the MF-electrodes composed of PANi/RGO multilayer films offer a new microdimensional design for high energy storage devices

Raman spectra of bilayer graphene covered with Poly(methyl methacrylate) thin film

Energy Technology Data Exchange (ETDEWEB)

Xia Minggang [MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi' an Jiaotong University, 710049 (China); Center on Experimental Physics, School of Science, Xi' an Jiaotong University, 710049 (China); Su Zhidan; Zhang Shengli [MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi' an Jiaotong University, 710049 (China); Department of Applied Physics, School of Science, Xi' an Jiaotong University, 710049 (China)

2012-09-15

The Raman spectra of bilayer graphene covered with poly(methyl methacrylate) (PMMA) were investigated. Both the G and 2D peaks of PMMA-coated graphene were stiff and broad compared with those of uncovered graphene. This could be attributed to the residual strain induced by high-temperature baking during fabrication of the nanodevice. Furthermore, the two 2D peaks stiffened and broadened with increasing laser power, which is just the reverse to uncovered graphene. The stiffness is likely caused by graphene compression induced by the circular bubble of the thin PMMA film generated by laser irradiation. Our findings may contribute to the application of PMMA in the strain engineering of graphene nanodevices.

Raman spectra of bilayer graphene covered with Poly(methyl methacrylate thin film

Directory of Open Access Journals (Sweden)

Minggang Xia

2012-09-01

Full Text Available The Raman spectra of bilayer graphene covered with poly(methyl methacrylate (PMMA were investigated. Both the G and 2D peaks of PMMA-coated graphene were stiff and broad compared with those of uncovered graphene. This could be attributed to the residual strain induced by high-temperature baking during fabrication of the nanodevice. Furthermore, the two 2D peaks stiffened and broadened with increasing laser power, which is just the reverse to uncovered graphene. The stiffness is likely caused by graphene compression induced by the circular bubble of the thin PMMA film generated by laser irradiation. Our findings may contribute to the application of PMMA in the strain engineering of graphene nanodevices.

Exfoliation of non-oxidized graphene flakes for scalable conductive film.

Science.gov (United States)

Park, Kwang Hyun; Kim, Bo Hyun; Song, Sung Ho; Kwon, Jiyoung; Kong, Byung Seon; Kang, Kisuk; Jeon, Seokwoo

2012-06-13

The increasing demand for graphene has required a new route for its mass production without causing extreme damages. Here we demonstrate a simple and cost-effective intercalation based exfoliation method for preparing high quality graphene flakes, which form a stable dispersion in organic solvents without any functionalization and surfactant. Successful intercalation of alkali metal between graphite interlayers through liquid-state diffusion from ternary KCl-NaCl-ZnCl(2) eutectic system is confirmed by X-ray diffraction and X-ray photoelectric spectroscopy. Chemical composition and morphology analyses prove that the graphene flakes preserve their intrinsic properties without any degradation. The graphene flakes remain dispersed in a mixture of pyridine and salts for more than 6 months. We apply these results to produce transparent conducting (∼930 Ω/□ at ∼75% transmission) graphene films using the modified Langmuir-Blodgett method. The overall results suggest that our method can be a scalable (>1 g/batch) and economical route for the synthesis of nonoxidized graphene flakes.

Percolation effect in thick film superconductors

Energy Technology Data Exchange (ETDEWEB)

Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

Percolation effect in thick film superconductors

International Nuclear Information System (INIS)

Sali, R.; Harsanyi, G.

1994-01-01

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

Preparation of polyvinyl alcohol graphene oxide phosphonate film and research of thermal stability and mechanical properties.

Science.gov (United States)

Li, Jihui; Song, Yunna; Ma, Zheng; Li, Ning; Niu, Shuai; Li, Yongshen

2018-05-01

In this article, flake graphite, nitric acid, peroxyacetic acid and phosphoric acid are used to prepare graphene oxide phosphonic and phosphinic acids (GOPAs), and GOPAs and polyvinyl alcohol (PVA) are used to synthesize polyvinyl alcohol graphene oxide phosphonate and phosphinate (PVAGOPs) in the case of faint acidity and ultrasound irradiation, and PVAGOPs are used to fabricate PVAGOPs film, and the structure and morphology of GOPAs, PVAGOPs and PVAGOPs film are characterized, and the thermal stability and mechanical properties of PVAGOPs film are investigated. Based on these, it has been proved that GOPAs consist of graphene oxide phosphonic acid and graphene oxide phosphinic acid, and there are CP covalent bonds between them, and PVAGOPs are composed of GOPAs and PVA, and there are six-member lactone rings between GOPAs and PVA, and the thermal stability and mechanical properties of PVAGOPs film are improved effectively. Copyright © 2018 Elsevier B.V. All rights reserved.

Thickness dependence of J_c (0) in MgB_2 films

International Nuclear Information System (INIS)

Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

2016-01-01

Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

Layer-by-Layer Self-Assembled Graphene Multilayer Films via Covalent Bonds for Supercapacitor Electrodes

Directory of Open Access Journals (Sweden)

Xianbin Liu

2015-05-01

Full Text Available To maximize the utilization of its single-atom thin nature, a facile scheme to fabricate graphene multilayer films via a layer-by-layer self-assembled process was presented. The structure of multilayer films was constructed by covalently bonding graphene oxide (GO using p-phenylenediamine (PPD as a covalent cross-linking agent. The assembly process was confirmed to be repeatable and the structure was stable. With the π-π conjugated structure and a large number of spaces in the framework, the graphene multi‐ layer films exhibited excellent electrochemical perform‐ ance. The uniform ultrathin electrode exhibited a capacitance of 41.71 μF/cm2 at a discharge current of 0.1 μA/cm2, and displayed excellent stability of 88.9 % after 1000 charge-discharge cycles.

Building up Graphene-Based Conductive Polymer Composite Thin Films Using Reduced Graphene Oxide Prepared by γ-Ray Irradiation

Directory of Open Access Journals (Sweden)

Siyuan Xie

2013-01-01

Full Text Available In this paper, reduced graphene oxide (RGO was prepared by means of γ-ray irradiation of graphene oxide (GO in a water/ethanol mix solution, and we investigated the influence of reaction parameters, including ethanol concentration, absorbed dose, and dose rate during the irradiation. Due to the good dispersibility of the RGO in the mix solution, we built up flexible and conductive composite films based on the RGO and polymeric matrix through facile vacuum filtration and polymer coating. The electrical and optical properties of the obtained composite films were tested, showing good electrical conductivity with visible transmittance but strong ultraviolet absorbance.

Direct synthesis of multi-layer graphene film on various substrates by microwave plasma at low temperature

Energy Technology Data Exchange (ETDEWEB)

Park, Hyun Jae [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Ahn, Byung Wook; Kim, Tae Yoo; Lee, Jung Woo [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Yong Ho; Choi, Yong Sup [Plasma Technology Research Center, 814-2 Osickdo-dong (SGFEZ), Gunsan, Jeollabuk-do 573-540 (Korea, Republic of); Song, Young Il, E-mail: physein01@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Su Jeong, E-mail: suhsj@skku.edu [School of Advanced Materials Science and Engineering, Advanced Materials and Process Research Center (AMPRC), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-07-31

We introduce a possible route for vertically standing multi-layer graphene films (VMGs) on various substrates at low temperature by electron cyclone resonance microwave plasma. VMG films on various substrates, including copper sheet, glass and silicon oxide wafer, were analyzed by studying their structural, electrical, and optical properties. The density and temperature of plasma were measured using Cylindrical Langmuir probe analysis. The morphologies and microstructures of multi-layer graphene were characterized using field emission scattering electron microscope, high resolution transmission electron microscope, and Raman spectra measurement. The VMGs on different substrates at the same experimental conditions synthesized the wrinkled VMGs with different heights. In addition, the transmittance and electrical resistance were measured using ultra-violet visible near-infrared spectroscopy and 4 probe point surface resistance measurement. The VMGs on glass substrate obtained a transmittance of 68.8% and sheet resistance of 796 Ω/square, whereas the VMGs on SiO{sub 2} wafer substrate showed good sheet resistance of 395 Ω/square and 278 Ω/square. The results presented herein demonstrate a simple method of synthesizing of VMGs on various substrates at low temperature for mass production, in which the VMGs can be used in a wide range of application fields for energy storage, catalysis, and field emission due to their unique orientation. - Highlights: • We present for synthesis method of graphene at low temperature on various substrates. • We grow the graphene films at low temperature under of 432 °C. • Structural information of graphene films were studied upon Raman spectroscopy. • Inter-layer spacing of vertically standing graphene relies on synthesis time. • We measured a transmittance and a resistance for graphene films on difference substrate.

Efficient and large scale synthesis of graphene from coal and its film electrical properties studies.

Science.gov (United States)

Wu, Yingpeng; Ma, Yanfeng; Wang, Yan; Huang, Lu; Li, Na; Zhang, Tengfei; Zhang, Yi; Wan, Xiangjian; Huang, Yi; Chen, Yongsheng

2013-02-01

Coal, which is abundant and has an incompact structure, is a good candidate to replace graphite as the raw material for the production of graphene. Here, a new solution phase technique for the preparation of graphene from coal has been developed. The precursor: graphene oxide got from coal was examined by atomic force microscopy, dynamic light scattering and X-ray diffraction, the results showed the GO was a small and single layer sheet. The graphene was examined by X-ray photoelectron spectroscopy, and Raman spectroscopy. Furthermore, graphene films have been prepared using direct solution process and the electrical conductivity and Hall effect have been studied. The results showed the conductivity of the films could reach as high as 2.5 x 10(5) Sm(-1) and exhibited an n-type behavior.

Sol-gel synthesis of Bi2WO6/graphene thin films with enhanced photocatalytic performance for nitric monoxide oxidation under visible light irradiation

Science.gov (United States)

Sun, Chufeng; Wang, Yanbin; Su, Qiong

2018-06-01

Bi2WO6 and Bi2WO6/graphene thin films were fabricated by spin coating and post annealing at 600 °C for 2 h. In four different thin film samples, the graphene concentration was controlled as 0, 2, 4 and 6 wt%, respectively. The morphology, grain size and elemental distribution of the thin films were characterized by SEM and TEM. The crystallization and crystal phases were determined by XRD patterns, and the existence of graphene in Bi2WO6/graphene composite thin films were confirmed by Raman spectra. The photocatalytic performance of Bi2WO6 and Bi2WO6/graphene thin films was investigated by oxidizing NO under visible light irradiation. The results showed that Bi2WO6/graphene with 4 wt% of graphene showed the highest photocatalytic performance among all samples. This could be attributed to the increased electron conductivity with the presence of graphene. However, a further increased graphene concentration resulted in a decreased photocatalytic performance.

Non-monotonic piezoresistive behaviour of graphene nanoplatelet (GNP-polymer composite flexible films prepared by solvent casting

Directory of Open Access Journals (Sweden)

S. Makireddi

2017-07-01

Full Text Available Graphene-polymer nanocomposite films show good piezoresistive behaviour and it is reported that the sensitivity increases either with the increased sheet resistance or decreased number density of the graphene fillers. A little is known about this behaviour near the percolation region. In this study, graphene nanoplatelet (GNP/poly (methyl methacrylate (PMMA flexible films are fabricated via solution casting process at varying weight percent of GNP. Electrical and piezoresistive behaviour of these films is studied as a function of GNP concentration. Piezoresistive strain sensitivity of the films is measured by affixing the film to an aluminium specimen which is subjected to monotonic uniaxial tensile load. The change in resistance of the film with strain is monitored using a four probe. An electrical percolation threshold at 3 weight percent of GNP is observed. We report non-monotonic piezoresistive behaviour of these films as a function GNP concentration. We observe an increase in gauge factor (GF with unstrained resistance of the films up to a critical resistance corresponding to percolation threshold. Beyond this limit the GF decreases with unstrained resistance.

Vanishing stick-slip friction in few-layer graphenes: the thickness effect.

Science.gov (United States)

Xu, Liang; Ma, Tian-Bao; Hu, Yuan-Zhong; Wang, Hui

2011-07-15

We report the thickness dependence of intrinsic friction in few-layer graphenes, adopting molecular dynamics simulations. The friction force drops dramatically with decreasing number of layers and finally approaches zero with two or three layers. The results, which are robust over a wide range of temperature, shear velocity, and pressure are quantitatively explained by a theoretical model with regard to lateral stiffness, slip length, and maximum lateral force, which could provide a new conceptual framework for understanding stick-slip friction. The results reveal the crucial role of the dimensional effect in nanoscale friction, and could be helpful in the design of graphene-based nanodevices.

Nitrogen-Doped Holey Graphene Film-Based Ultrafast Electrochemical Capacitors.

Science.gov (United States)

Zhou, Qinqin; Zhang, Miao; Chen, Ji; Hong, Jong-Dal; Shi, Gaoquan

2016-08-17

The commercialized aluminum electrolytic capacitors (AECs) currently used for alternating current (AC) line-filtering are usually the largest components in the electronic circuits because of their low specific capacitances and bulky sizes. Herein, nitrogen-doped holey graphene (NHG) films were prepared by thermal annealing the composite films of polyvinylpyrrolidone (PVP), graphene oxide (GO), and ferric oxide (Fe2O3) nanorods followed by chemical etching with hydrochloride acid. The typical electrochemical capacitor with NHG electrodes exhibited high areal and volumetric specific capacitances of 478 μF cm(-2) and 1.2 F cm(-3) at 120 Hz, ultrafast frequency response with a phase angle of -81.2° and a resistor-capacitor time constant of 203 μs at 120 Hz, as well as excellent cycling stability. Thus, it is promising to replace conventional AEC for AC line-filtering in miniaturized electronics.

Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

International Nuclear Information System (INIS)

Jung, Hye-Mi; Um, Sukkee

2016-01-01

Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

International Nuclear Information System (INIS)

Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

1988-01-01

Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

Anomalous size effect in conductivity of Bi films of small thickness

International Nuclear Information System (INIS)

Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

1995-01-01

Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

Hexaferrite multiferroics: from bulk to thick films

Science.gov (United States)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

Energy Technology Data Exchange (ETDEWEB)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

2016-02-21

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

International Nuclear Information System (INIS)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

2016-01-01

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

A simple and flexible route to large-area conductive transparent graphene thin-films

NARCIS (Netherlands)

Arapov, K.; Goryachev, A.; With, de G.; Friedrich, H.

2015-01-01

Solution-processed conductive, flexible and transparent graphene thin films continue drawing attention from science and technology due to their potential for many electrical applications. Here, an up-scalable method for the solution processing of graphite to graphene and further to self-assembled

SnO{sub 2}/reduced graphene oxide composite films for electrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Bondarenko, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Mazanik, A.V., E-mail: mazanikalexander@gmail.com [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Streltsov, E.A. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus); Kulak, A.I., E-mail: kulak@igic.bas-net.by [Institute of General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganova str., 9/1, Minsk 220072 (Belarus); Korolik, O.V. [Belarusian State University, Nezalezhnastsi Av. 4, Minsk 220030 (Belarus)

2015-12-15

Highlights: • SnO{sub 2}/GO composites with mass fraction of carbon phase 0.01% ≤ w{sub C} ≤ 80% have been formed. • 400 °C annealing was applied for GO reduction in the composites. • SnO{sub 2}/rGO composites demonstrate a high electrocatalytic activity in anodic processes. • Exchange current density grows linearly with carbon phase concentration at w{sub C} ≤ 10%. - Abstract: SnO{sub 2}/GO (GO is graphene oxide) composite films with GO mass fraction w{sub C} ranging from 0.01 to 80% have been prepared using colloidal solutions. Heat treatment of SnO{sub 2}/GO films in Ar atmosphere at 400 °C leads to GO reduction accompanied by partial exfoliation and decreasing of the particle thickness. SnO{sub 2}/rGO (rGO is reduced GO) film electrodes demonstrate a high electrocatalytic activity in the anodic oxidation of inorganic (iodide-, chloride-, sulfite-anions) and organic (ascorbic acid) substances. The increase of the anodic current in these reactions is characterized by overpotential inherent to the individual rGO films and exchange current density grows linearly with rGO concentration at w{sub C} ≤ 10% indicating that the rGO particles in composites act as sites of electrochemical process. The SnO{sub 2}/rGO composite films, in which the chemically stable oxide matrix encapsulates the rGO inclusions, can be considered as a promising material for applied electrochemistry.

The effect of bubble acceleration on the liquid film thickness in micro tubes

Energy Technology Data Exchange (ETDEWEB)

Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

2010-08-15

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

The effect of bubble acceleration on the liquid film thickness in micro tubes

International Nuclear Information System (INIS)

Han, Youngbae; Shikazono, Naoki

2010-01-01

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

N-Doped graphene/PEDOT composite films as counter electrodes in DSSCs: Unveiling the mechanism of electrocatalytic activity enhancement

Science.gov (United States)

Paterakis, Georgios; Raptis, Dimitrios; Ploumistos, Alexandros; Belekoukia, Meltiani; Sygellou, Lamprini; Ramasamy, Madeshwaran Sekkarapatti; Lianos, Panagiotis; Tasis, Dimitrios

2017-11-01

A composite film was obtained by layer deposition of N-doped graphene and poly(3,4-ethylenedioxythiophene) (PEDOT) and was used as Pt-free counter electrode for dye-sensitized solar cells. N-doping of graphene was achieved by annealing mixtures of graphene oxide with urea. Various parameters concerning the treatment of graphene oxide-urea mixtures were monitored in order to optimize the electrocatalytic activity in the final solar cell device. These include the mass ratio of components, the annealing temperature, the starting concentration of the mixture in aqueous solution and the spinning rate for film formation. PEDOT was applied by electrodeposition. The homogeneity of PEDOT coverage onto either untreated or thermally annealed graphene oxide-urea film was assessed by imaging (AFM/SEM) and surface techniques (XPS). It was found that PEDOT was deposited in the form of island structures onto untreated graphene oxide-urea film. On the contrary, the annealed film was homogeneously covered by the polymer, acquiring morphology of decreased roughness. An apparent chemical interaction between PEDOT and N-doped graphene flakes was revealed by XPS data, involving potential grafting of PEDOT chains onto graphitic lattice through Csbnd C bonding. In addition, diffusion of nitrogen-containing fragments within the PEDOT layer was found to take place during electrodeposition process, resulting in enhanced interfacial interactions between components. The solar cell with the optimized N-doped graphene/PEDOT composite counter electrode exhibited a power conversion efficiency (η) of 7.1%, comparable within experimental error to that obtained by using a reference Pt counter electrode, which showed a value of 7.0%.

Effect of substrate thickness on ejection of phenylalanine molecules adsorbed on free-standing graphene bombarded by 10 keV C{sub 60}

Energy Technology Data Exchange (ETDEWEB)

Golunski, M. [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland); Verkhoturov, S.V.; Verkhoturov, D.S.; Schweikert, E.A. [Department of Chemistry, Texas A& M University, College Station, TX 77840 (United States); Postawa, Z., E-mail: zbigniew.postawa@uj.edu.pl [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30-348 Krakow (Poland)

2017-02-15

Highlights: • Substrate thickness has a prominent effect on the molecular ejection mechanism. • Collisions with projectile atoms leads to molecular ejection at thin substrates. • Interactions with deforming graphene sheet ejects molecules from thicker substrates. • Probability of fragmentation process decreases with the graphene substrate thickness. - Abstract: Molecular dynamics computer simulations have been employed to investigate the effect of substrate thickness on the ejection mechanism of phenylalanine molecules deposited on free-standing graphene. The system is bombarded from the graphene side by 10 keV C{sub 60} projectiles at normal incidence and the ejected particles are collected both in transmission and reflection directions. It has been found that the ejection mechanism depends on the substrate thickness. At thin substrates mostly organic fragments are ejected by direct collisions between projectile atoms and adsorbed molecules. At thicker substrates interaction between deforming topmost graphene sheet and adsorbed molecules becomes more important. As this process is gentle and directionally correlated, it leads predominantly to ejection of intact molecules. The implications of the results to a novel analytical approach in Secondary Ion Mass Spectrometry based on ultrathin free-standing graphene substrates and a transmission geometry are discussed.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

Science.gov (United States)

Ahmed, Mohsin; Khawaja, Mohamad; Notarianni, Marco; Wang, Bei; Goding, Dayle; Gupta, Bharati; Boeckl, John J.; Takshi, Arash; Motta, Nunzio; Saddow, Stephen E.; Iacopi, Francesca

2015-10-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square-1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g-1. This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications.

High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

Science.gov (United States)

Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

2016-05-01

A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

Science.gov (United States)

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Chemically-modified graphene sheets as an active layer for eco-friendly metal electroplating on plastic substrates

International Nuclear Information System (INIS)

Oh, Joon-Suk; Hwang, Taeseon; Nam, Gi-Yong; Hong, Jung-Pyo; Bae, Ah-Hyun; Son, Sang-Ik; Lee, Geun-Ho; Sung, Hak kyung; Choi, Hyouk Ryeol; Koo, Ja Choon; Nam, Jae-Do

2012-01-01

Eco-friendly nickel (Ni) electroplating was carried out on a plastic substrate using chemically modified graphene sheets as an active and conductive layer to initiate electroplating without using conventional pre-treatment or electroless metal-seeding processes. A graphene oxide (GO) solution was self-assembled on a polyethylene terephthalate (PET) film followed by evaporation to give GO layers (thickness around 6.5 μm) on PET (GO/PET) film. Then, the GO/PET film was chemically and thermally reduced to convert the GO layers to reduced graphene oxide (RGO) layers on the PET substrate. The RGO-coated PET (RGO/PET) film showed the sheet resistance of 100 Ω per square. On RGO/PET film, Ni electroplating was conducted under the constant-current condition and the entire surface of the PET film was completely metalized with Ni without any voids.

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya

2012-06-19

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

MEMS-based thick film PZT vibrational energy harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Thyssen, Anders

2011-01-01

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

Investigation of top electrode for PZT thick films based MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

2010-01-01

In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

Surface diffusion coefficient of Au atoms on single layer graphene grown on Cu

Energy Technology Data Exchange (ETDEWEB)

Ruffino, F., E-mail: francesco.ruffino@ct.infn.it; Cacciato, G.; Grimaldi, M. G. [Dipartimento di Fisica ed Astronomia-Universitá di Catania, via S. Sofia 64, 95123 Catania, Italy and MATIS IMM-CNR, via S. Sofia 64, 95123 Catania (Italy)

2014-02-28

A 5 nm thick Au film was deposited on single layer graphene sheets grown on Cu. By thermal processes, the dewetting phenomenon of the Au film on the graphene was induced so to form Au nanoparticles. The mean radius, surface-to-surface distance, and surface density evolution of the nanoparticles on the graphene sheets as a function of the annealing temperature were quantified by scanning electron microscopy analyses. These quantitative data were analyzed within the classical mean-field nucleation theory so to obtain the temperature-dependent Au atoms surface diffusion coefficient on graphene: D{sub S}(T)=[(8.2±0.6)×10{sup −8}]exp[−(0.31±0.02(eV)/(at) )/kT] cm{sup 2}/s.

Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

Directory of Open Access Journals (Sweden)

Robert Koncki

2006-04-01

Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

Accelerated evaporation of water on graphene oxide.

Science.gov (United States)

Wan, Rongzheng; Shi, Guosheng

2017-03-29

Using molecular dynamics simulations, we show that the evaporation of nanoscale volumes of water on patterned graphene oxide is faster than that on homogeneous graphene oxide. The evaporation rate of water is insensitive to variation in the oxidation degree of the oxidized regions, so long as the water film is only distributed on the oxidized regions. The evaporation rate drops when the water film spreads onto the unoxidized regions. Further analysis showed that varying the oxidation degree observably changed the interaction between the outmost water molecules and the solid surface, but the total interaction for the outmost water molecules only changed a very limited amount due to the correspondingly regulated water-water interaction when the water film is only distributed on the oxidized regions. When the oxidation degree is too low and some unoxidized regions are also covered by the water film, the thickness of the water film decreases, which extends the lifetime of the hydrogen bonds for the outmost water molecules and lowers the evaporation rate of the water. The insensitivity of water evaporation to the oxidation degree indicates that we only need to control the scale of the unoxidized and oxidized regions for graphene oxide to regulate the evaporation of nanoscale volumes of water.

Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

Directory of Open Access Journals (Sweden)

S. C. Bodepudi

2016-01-01

Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

Thick-film effects in the oxidation and hydriding of zirconium alloys

International Nuclear Information System (INIS)

Johnson, A.B. Jr.

1989-08-01

One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

Coupled Chiral Structure in Graphene-Based Film for Ultrahigh Thermal Conductivity in Both In-Plane and Through-Plane Directions.

Science.gov (United States)

Meng, Xin; Pan, Hui; Zhu, Chengling; Chen, Zhixin; Lu, Tao; Xu, Da; Li, Yao; Zhu, Shenmin

2018-06-21

The development of high-performance thermal management materials to dissipate excessive heat both in plane and through plane is of special interest to maintain efficient operation and prolong the life of electronic devices. Herein, we designed and constructed a graphene-based composite film, which contains chiral liquid crystals (cellulose nanocrystals, CNCs) inside graphene oxide (GO). The composite film was prepared by annealing and compacting of self-assembled GO-CNC, which contains chiral smectic liquid crystal structures. The helical arranged nanorods of carbonized CNC act as in-plane connections, which bridge neighboring graphene sheets. More interestingly, the chiral structures also act as through-plane connections, which bridge the upper and lower graphene layers. As a result, the graphene-based composite film shows extraordinary thermal conductivity, in both in-plane (1820.4 W m -1 K -1 ) and through-plane (4.596 W m -1 K -1 ) directions. As a thermal management material, the heat dissipation and transportation behaviors of the composite film were investigated using a self-heating system and the results showed that the real-time temperature of the heater covered with the film was 44.5 °C lower than a naked heater. The prepared film shows a much higher efficiency of heat transportation than the commonly used thermal conductive Cu foil. Additionally, this graphene-based composite film exhibits excellent mechanical strength of 31.6 MPa and an electrical conductivity of 667.4 S cm -1 . The strategy reported here may open a new avenue to the development of high-performance thermal management films.

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

International Nuclear Information System (INIS)

Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

2014-01-01

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

Fabrication of bi-layer graphene and theoretical simulation for its possible application in thin film solar cell.

Science.gov (United States)

Behura, Sanjay K; Mahala, Pramila; Nayak, Sasmita; Yang, Qiaoqin; Mukhopadhyay, Indrajit; Janil, Omkar

2014-04-01

High quality graphene film is fabricated using mechanical exfoliation of highly-oriented pyrolytic graphite. The graphene films on glass substrates are characterized using field-emission scanning electron microscopy, atomic force microscopy, Raman spectroscopy, UV-vis spectroscopy and Fourier transform infrared spectroscopy. A very high intensity ratio of 2D to G-band (to approximately 1.67) and narrow 2D-band full-width at half maximum (to approximately 40 cm(-1)) correspond to the bi-layer graphene formation. The bi-layer graphene/p-GaN/n-InGaN/n-GaN/GaN/sAl2O3 system is studied theoretically using TCAD Silvaco software, in which the properties of exfoliated bi-layer graphene are used as transparent and conductive film, and the device exhibits an efficiency of 15.24% compared to 13.63% for ITO/p-GaN/n-InGaN/n-GaN/GaN/Al2O3 system.

Raman Studies on Pre- and Post-Processed CVD Graphene Films Grown under Various Nitrogen Carrier Gas Flows

Science.gov (United States)

Beh, K. P.; Yam, F. K.; Abdalrheem, Raed; Ng, Y. Z.; Suhaimi, F. H. A.; Lim, H. S.; Mat Jafri, M. Z.

2018-04-01

In this work, graphene films were grown on copper substrates using chemical vapour deposition method under various N2 carrier flow rate. The samples were characterized using Raman spectroscopy. Three sets of Raman measurements have been performed: graphene/Cu (as-grown samples), pre-annealed graphene/glass, and post-annealed graphene/glass. It was found that the Raman spectra of graphene/Cu samples possessed a hump-shaped baseline, additionally higher signal-to-noise ratio (SNR) that leads to attenuation graphene-related bands. Significant improvement of SNR and flat baseline were observed for graphene films transferred on glass substrate. Further analysis on the remaining sets of Raman spectra highlighted minute traces of polymethyl methacrylate (PMMA) could yield misleading results. Hence, the set of Raman spectra on annealed graphene/glass samples would be suitable in further elucidating the effects of N2 carrier flow towards graphene growth. From there, higher N2 flow implied dilution of methanol/H2 mixture, limiting interactions between reactants and substrate. This leads to smaller crystallite size and lesser graphene layers.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Synthesis, nanostructure and magnetic properties of FeCo-reduced graphene oxide composite films by one-step electrodeposition

International Nuclear Information System (INIS)

Cao, Derang; Li, Hao; Wang, Zhenkun; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2015-01-01

FeCo-reduced graphene oxide (FeCo-RGO) composite film was fabricated on indium tin oxide substrate using one-step electrodeposition method. Raman spectroscopy and field emission scanning electron microscope results show that the reduced graphene oxide is coprecipitated with the FeCo film. The energy-dispersive spectrometer results demonstrate that the atomic ratio of Fe/Co in FeCo-RGO composite film is larger than that of the FeCo film under the same fabrication condition. As a result, the FeCo-RGO composite film exhibits good soft magnetic properties and high-frequency properties as well as the FeCo film. The magnetic anisotropy field and saturation magnetization of FeCo-RGO composite film are increased when compared with FeCo film. Furthermore, the ferromagnetic resonance frequency is improved from 2.15 GHz for the FeCo film to 3.9 GHz for the FeCo-RGO composite film. - Highlights: • FeCo-reduced graphene oxide composite film was fabricated on indium tin oxide substrate. • One step electrodeposition method was used. • Good soft magnetic properties were exhibited by the composite films. • Increase of resonance frequency from 2.15 GHz for FeCo film to 3.9 GHz for composite film

Supercapacitors based on flexible graphene/polyaniline nanofiber composite films.

Science.gov (United States)

Wu, Qiong; Xu, Yuxi; Yao, Zhiyi; Liu, Anran; Shi, Gaoquan

2010-04-27

Composite films of chemically converted graphene (CCG) and polyaniline nanofibers (PANI-NFs) were prepared by vacuum filtration the mixed dispersions of both components. The composite film has a layered structure, and PANI-NFs are sandwiched between CCG layers. Furthermore, it is mechanically stable and has a high flexibility; thus, it can be bent into large angles or be shaped into various desired structures. The conductivity of the composite film containing 44% CCG (5.5 x 10(2) S m(-1)) is about 10 times that of a PANI-NF film. Supercapacitor devices based on this conductive flexible composite film showed large electrochemical capacitance (210 F g(-1)) at a discharge rate of 0.3 A g(-1). They also exhibited greatly improved electrochemical stability and rate performances.

Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

KAUST Repository

Chen, Wei; Fan, Zhongli; Zeng, Gaofeng; Lai, Zhiping

2013-01-01

High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found

Structural changes in graphene oxide thin film by electron-beam irradiation

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Chetna, E-mail: tchetna91@gmail.com [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Lakshmi, G.B.V.S.; Kumar, Sunil; Tripathi, Ambuj [Materials Science Group, Inter University Accelerator Centre, New Delhi 67 (India); Avasthi, D.K. [Amity University, Noida 201313, Uttar Pradesh (India)

2016-07-15

Although we have a whole class of 2D materials, graphene has drawn much attention for its excellent electronic, optical, thermal and mechanical properties. Recent researches have shown its large scale production by the reduction of graphene oxide either thermally, chemically or electrochemically. Although the structure of graphene oxide is inhomogeneous and hence complicated due to the presence of organic moieties e.g. epoxy, carboxylic acid, hydroxyl groups etc., its properties can be tuned by reduction according to desired application. The aim of this work is to synthesize continuous thin film of graphene oxide using commercially available graphene oxide solution and to study its reduction by 25 keV electron beam irradiation at fluences varying from 2 × 10{sup 11} to 2 × 10{sup 13} e{sup −}/cm{sup 2}. Our studies using X-ray diffraction, Raman microscopy and UV–Vis spectroscopy showed that electron-beam irradiation is an effective tool for reduction of graphene oxide and for tuning its band gap.

A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors

International Nuclear Information System (INIS)

Ahmed, Mohsin; Wang, Bei; Goding, Dayle; Iacopi, Francesca; Khawaja, Mohamad; Notarianni, Marco; Takshi, Arash; Saddow, Stephen E; Gupta, Bharati; Motta, Nunzio; Boeckl, John J

2015-01-01

We designed a nickel-assisted process to obtain graphene with sheet resistance as low as 80 Ω square −1 from silicon carbide films on Si wafers with highly enhanced surface area. The silicon carbide film acts as both a template and source of graphitic carbon, while, simultaneously, the nickel induces porosity on the surface of the film by forming silicides during the annealing process which are subsequently removed. As stand-alone electrodes in supercapacitors, these transfer-free graphene-on-chip samples show a typical double-layer supercapacitive behaviour with gravimetric capacitance of up to 65 F g −1 . This work is the first attempt to produce graphene with high surface area from silicon carbide thin films for energy storage at the wafer-level and may open numerous opportunities for on-chip integrated energy storage applications. (paper)

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

Science.gov (United States)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Imaging and thickness measurement of amorphous intergranular films using TEM

International Nuclear Information System (INIS)

MacLaren, I.

2004-01-01

Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

3D Freeze-Casting of Cellular Graphene Films for Ultrahigh-Power-Density Supercapacitors.

Science.gov (United States)

Shao, Yuanlong; El-Kady, Maher F; Lin, Cheng-Wei; Zhu, Guanzhou; Marsh, Kristofer L; Hwang, Jee Youn; Zhang, Qinghong; Li, Yaogang; Wang, Hongzhi; Kaner, Richard B

2016-08-01

3D cellular graphene films with open porosity, high electrical conductivity, and good tensile strength, can be synthesized by a method combining freeze-casting and filtration. The resulting supercapacitors based on 3D porous reduced graphene oxide (RGO) film exhibit extremely high specific power densities and high energy densities. The fabrication process provides an effective means for controlling the pore size, electronic conductivity, and loading mass of the electrode materials, toward devices with high energy-storage performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

Directory of Open Access Journals (Sweden)

Kuo-Ching Kuo

2007-04-01

Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

Coupling behaviors of graphene/SiO2/Si structure with external electric field

Science.gov (United States)

Onishi, Koichi; Kirimoto, Kenta; Sun, Yong

2017-02-01

A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the traveling-wave. The attenuation originates from Joule heat of the moving carriers, and the delay of the traveling-wave was due to electrical resistances of the fixed charge and the moving carriers with low mobility in the sample. The attenuation of the external electric field was observed in both Si crystal and graphene films in the temperature range. A large attenuation around 190 K, which depends on the strength of external electric field, was confirmed for the Si crystal. But, no significant temperature and field dependences of the attenuation in the graphene films were detected. On the other hand, the delay of the traveling-wave due to ionic scattering at low temperature side was observed in the Si crystal, but cannot be detected in the films of the mono-, bi- and penta-layer graphene with high conductivities. Also, it was indicated in this study that skin depth of the graphene film was less than thickness of two graphene atomic layers in the temperature range.

Morphology, thermal, mechanical, and barrier properties of graphene oxide/poly(lactic acid) nanocomposite films

International Nuclear Information System (INIS)

Kim, Seong Woo; Choi, Hyun Muk

2016-01-01

To improve the physical and gas barrier properties of biodegradable poly(lactic acid) (PLA) film, two graphene nanosheets of highly functionalized graphene oxide (0.3 wt% to 0.7 wt%) and low-functionalized graphene oxide (0.5 wt%) were incorporated into PLA resin via solution blending method. Subsequently, we investigated the effects of material parameters such as loading level and degree of functionalization for the graphene nanosheets on the morphology and properties of the resultant nanocomposites. The highly functionalized graphene oxide (GO) caused more exfoliation and homogeneous dispersion in PLA matrix as well as more sustainable suspensions in THF, compared to low-functionalized graphene oxide (LFGO). When loaded with GO from 0.3 wt% to 0.7 wt%, the glass transition temperature, degree of crystallinity, tensile strength and modulus increased steadily. The GO gave rise to more pronounced effect in the thermal and mechanical reinforcement, relative to LFGO. In addition, the preparation of fairly transparent PLA-based nanocomposite film with noticeably improved barrier performance achieved only when incorporated with GO up to 0.7wt%. As a result, GO may be more compatible with hydrophilic PLA resin, compared to LFGO, resulting in more prominent enhancement of nanocomposites properties.

Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Phelan, P.E.; Chen, G.; Tien, C.L.

1991-01-01

Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Li, Xinyu [College of Science, Guilin University of Technology, Guilin 541004 (China); Department of Physics and Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 (China); Tang, Tao; Li, Ming, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [College of Science, Guilin University of Technology, Guilin 541004 (China); He, Xiancong, E-mail: liming928@163.com, E-mail: lixinyu5260@163.com [School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)

2015-01-05

Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.

Thickness dependence of Hall mobility of HWE grown PbTe films

International Nuclear Information System (INIS)

Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

1985-01-01

Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

Realization of size controllable graphene micro/nanogap with a micro/nanowire mask method for organic field-effect transistors

DEFF Research Database (Denmark)

Liao, Zhiyu; Wan, Qing; Liu, Huixuan

2011-01-01

with the graphene micro/nanogap bottom electrodes. The ultrathin thickness of the graphene, combined with its good compatibility with organic semiconductors, and high electrical conductivity produced high-performance CuPc film device with mobility at 0.053 cm(2)/Vs and on/off ratio at 10(5), showing promising......A size controllable graphene micro/nanogap fabrication method using micro/nanowire as mask is presented. The gap dimension can be adjusted by the diameter of the mask wire. As a typical application, copper phthalocyanine (CuPc) film organic field-effect transistors (OFETs) were fabricated...

Evolution of structural and electrical properties of carbon films from amorphous carbon to nanocrystalline graphene on quartz glass by HFCVD.

Science.gov (United States)

Zhai, Zihao; Shen, Honglie; Chen, Jieyi; Li, Xuemei; Jiang, Ye

2018-04-25

Direct growth of graphene films on glass is of great importance but has so far met with limited success. The non-catalytic property of glass results in the low decomposition ability of hydrocarbon precursors, especially at reduced temperatures (structural and electrical properties of carbon films deposited on quartz glass at 850 °C by hot-filament chemical vapor deposition (HFCVD). The results revealed that the obtained a-C films were all graphite-like carbon films. Structural transition of the deposited films from a-C to nanocrystalline graphene was achieved by raising the hydrogen dilution ratios from 10 % to over 80 %. Based on systematically structural and chemical characterizations, a schematic process with three steps including sp2 chains aggregation, aromatic rings formation and sp3 bonds etch was proposed to interpret the structural evolution. The nanocrystalline graphene films grown on glass by HFCVD exhibited good electrical performance with a carrier mobility of 36.76 cm2/(V·s) and a resistivity of 5.24×10-3 Ω·cm over an area of 1 cm2. Temperature-dependent electrical characterizations revealed that the electronic transport in carbon films was dominated by defect, localised and extended states respectively when increasing the temperature from 75 K to 292 K. The nanocrystalline graphene films presented higher carrier mobility and lower carrier concentration than a-C films, which was mainly attributed to their smaller conductive activation energy. The present investigation provides an effective way for direct growth of graphene films on glass at reduced temperatures and also offers useful insights into the understanding of structural and electrical relationship between a-C and graphene.

Chitosan-graphene oxide films and CO2-dried porous aerogel microspheres: Interfacial interplay and stability.

Science.gov (United States)

Frindy, Sana; Primo, Ana; Ennajih, Hamid; El Kacem Qaiss, Abou; Bouhfid, Rachid; Lahcini, Mohamed; Essassi, El Mokhtar; Garcia, Hermenegildo; El Kadib, Abdelkrim

2017-07-01

The intimate interplay of chitosan (CS) and graphene oxide (GO) in aqueous acidic solution has been explored to design upon casting, nanostructured "brick-and-mortar" films (CS-GO-f) and by acidic-to-basic pH inversion, porous CO 2 -dried aerogel microspheres (CS-GO-m). Owing to the presence of oxygenated functional groups in GO, good-quality crack-free hybrid films were obtained. Mechanical properties were improved independently of the GO content and it was found that a 20wt% loading affords hybrid film characterized with a Young modulus three times superior to that reached with the same loading of layered clay. The presence of graphene oxide was found to be detrimental for the thermal stability of the polysaccharide at T <350°C, a fact attributed to the well-established decomposition of the oxygenated functional groups of the graphene sheets. Irrespective to the graphene oxide loading, chitosan-graphene oxide mixture preserves the gelation memory of the polysaccharide. Supercritical drying of the resulting soft hydrogels provides macroporous network with surface areas ranging from 226m 2 g -1 to 554m 2 g -1 . XPS and RAMAN analyses evidenced the selective reduction of GO sheets inside of these microspheres, affording the hitherto unknown macroporous chitosan-entangled-reduced graphene oxide (CS-rGO-m) aerogels. Improvement in both hydrothermal stability (under water reflux) and chemical stability (under acidic conditions) have been noticed for chitosan-graphene oxide microspheres with respect to non-modified chitosan and chitosan-clay bio-hybrids, a result rooted in the substantial hydrophobic character imparted by the addition of graphenic material to the polysaccharide skeleton. In essence, this contribution demonstrates that graphene oxide loading do not disturb neither the filmogenicity of chitosan nor its gelation ability and constitutes a promising route for novel chitosan-based functional hybrid materials. Copyright © 2017 Elsevier Ltd. All rights

Influence of the graphene substrate on morphology of the gold thin film. Spectroscopic ellipsometry study

International Nuclear Information System (INIS)

Kostruba, A.M.

2013-01-01

In metal optics gold assumes a special status because of its practical importance in optoelectronic and nanooptical devices, and its role huge increases when occurs combination of gold with two-dimension materials. We performed spectroscopic ellipsometry measurements on evaporated gold, and gold–graphene nanostructures to determine the optical dielectric function across a broad spectral range from 250 to 1000 nm. It was found that the deposition of gold film on the quartz substrate covered by graphene flake leads to significant changes in structural and dielectric properties of thin gold layer. Such changes can be explained by increasing of the gold cluster size. The model fit of the ellipsometric data demonstrates that the bilayer “graphene-gold” nanostructure can be described as a uniform optically homogeneous layer with modified optical properties. We can suggest that graphene flake creates a matrix for epitaxial alignment of the crystalline structure of the gold film during its growing. Effective doping of the graphene by free electrons of the gold clusters tends to decrease the optical contrast at the graphene-gold interface.

Improvement in Functional Properties of Soy Protein Isolate-Based Film by Cellulose Nanocrystal–Graphene Artificial Nacre Nanocomposite

Directory of Open Access Journals (Sweden)

Kuang Li

2017-07-01

Full Text Available A facile, inexpensive, and green approach for the production of stable graphene dispersion was proposed in this study. We fabricated soy protein isolate (SPI-based nanocomposite films with the combination of 2D negative charged graphene and 1D positive charged polyethyleneimine (PEI-modified cellulose nanocrystals (CNC via a layer-by-layer assembly method. The morphologies and surface charges of graphene sheets and CNC segments were characterized by atomic force microscopy and Zeta potential measurements. The hydrogen bonds and multiple interface interactions between the filler and SPI matrix were analyzed by Attenuated Total Reflectance–Fourier Transform Infrared spectra and X-ray diffraction patterns. Scanning electron microscopy demonstrated the cross-linked and laminated structures in the fracture surface of the films. In comparison with the unmodified SPI film, the tensile strength and surface contact angles of the SPI/graphene/PEI-CNC film were significantly improved, by 99.73% and 37.13% respectively. The UV–visible light barrier ability, water resistance, and thermal stability were also obviously enhanced. With these improved functional properties, this novel bio-nanocomposite film showed considerable potential for application for food packaging materials.

Thickness of residual wetting film in liquid-liquid displacement

Science.gov (United States)

Beresnev, Igor; Gaul, William; Vigil, R. Dennis

2011-08-01

Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

International Nuclear Information System (INIS)

Kotis, L.; Gurban, S.; Pecz, B.; Menyhard, M.; Yakimova, R.

2014-01-01

Highlights: • The thickness of graphene grown on SiC was determined by AES depth profiling. • The AES depth profiling verified the presence of buffer layer on SiC. • The presence of unsaturated Si bonds in the buffer layer has been shown. • Using multipoint analysis thickness distribution of the graphene on the wafer was determined. - Abstract: Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 μm), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet

Uniform hexagonal graphene flakes and films grown on liquid copper surface

OpenAIRE

Geng, Dechao; Wu, Bin; Guo, Yunlong; Huang, Liping; Xue, Yunzhou; Chen, Jianyi; Yu, Gui; Jiang, Lang; Hu, Wenping; Liu, Yunqi

2012-01-01

Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 μm2), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films ...

Comparison of different methods for measuring the passive film thickness on metals

International Nuclear Information System (INIS)

Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

2016-01-01

Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

Preparation of water-soluble graphene nanoplatelets and highly conductive films

KAUST Repository

Xu, Xuezhu

2017-08-11

This paper tackles the challenge of preparation stable, highly concentrated aqueous graphene dispersions. Despite tremendous recent interest, there has been limited success in developing a method that ensures the total dispersion of non-oxidized, defect-free graphene nanosheets in water. This study successfully demonstrates that few-layer graphene nanoplatelets (GNPs) can form highly concentrated aqueous colloidal solutions after they have been pretreated in a low-concentration inorganic sodium-hypochlorite and sodium-bromide salted aqueous solvent. This method retains the graphitic structure as evidenced by nuclear magnetic resonance spectroscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Vacuum-filtrated freestanding films demonstrate an electrical conductivity as high as 3000 S m−1. This dispersion technique is believed to be applicable not only for GNPs, but also for dispersing other types of graphitic materials, including fullerenes, single/double/multi-walled carbon nanotubes, graphene nanoribbons and etc.

Assembly and benign step-by-step post-treatment of oppositely charged reduced graphene oxides for transparent conductive thin films with multiple applications

Science.gov (United States)

Zhu, Jiayi; He, Junhui

2012-05-01

We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on PET showed a significant decrease in electrical conductivity. In addition, the graphene thin film had a smooth surface with tunable wettability.We report a new approach for the fabrication of flexible and transparent conducting thin films via the layer-by-layer (LbL) assembly of oppositely charged reduced graphene oxide (RGO) and the benign step-by-step post-treatment on substrates with a low glass-transition temperature, such as glass and poly(ethylene terephthalate) (PET). The RGO dispersions and films were characterized by means of atomic force microscopy, UV-visible absorption spectrophotometery, Raman spectroscopy, transmission electron microscopy, contact angle/interface systems and a four-point probe. It was found that the graphene thin films exhibited a significant increase in electrical conductivity after the step-by-step post-treatments. The graphene thin film on the PET substrate had a good conductivity retainability after multiple cycles (30 cycles) of excessively bending (bending angle: 180°), while tin-doped indium oxide (ITO) thin films on

A photoelectrochemical (PEC) study on graphene oxide based hematite thin films heterojunction (R-GO/Fe2O3)

Science.gov (United States)

Sharma, Poonam; Zachariah, Michael; Ehrman, Sheryl; Shrivastava, Rohit; Dass, Sahab; Satsangi, Vibha; Michael Zachariah, Sheryl Ehrman Collaboration; Rohit Shrivastava, Sahab Dass Collaboration; Vibha R Satsangi, Poonam Sharma Team

2013-03-01

Graphene has an excellent electronic conductivity, a high theoretical surface area of 2630 m2/g and excellent mechanical properties and, thus, is a promising component for high-performance electrode materials. Following this, GO has been used to modify the PEC response of photoactive material hematite thin films in PEC cell. A reduced graphene oxide/iron oxide (R-GO/Fe2O3) thin film structure has been successfully prepared on ITO by directly growing iron oxide particles on the thermally reduced graphene oxide sheets prepared from suspension of exfoliated graphene oxide. R-GO/Fe2O3 thin films were tested in PEC cell and offered ten times higher photocurrent density than pristine Fe2O3 thin film sample. XRD, SEM, EDS, UV-Vis, Mott-Schottky and Raman studies were carried out to study spectro-electrochemical properties. Enhanced PEC performance of these photoelectrodes was attributed to its porous morphology, improved conductivity upon favorable carrier transfer across the oxides interface.

Application of β plastic film thickness gauge in automatic production of agricultural film

International Nuclear Information System (INIS)

Liu Longzhi; Guo Juhao

1996-01-01

The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

NARCIS (Netherlands)

Leeuwen, van H.J.

2011-01-01

The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

Green synthesis of high conductivity silver nanoparticle-reduced graphene oxide composite films

Energy Technology Data Exchange (ETDEWEB)

Dinh, D.A. [School of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.N., E-mail: bizhui@pusan.ac.kr [School of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Cho, Y.R. [School of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Zhou, Wei [Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005 (China); Hong, Xiaoting [School of Chemistry and Environment, South China Normal University, Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, Guangzhou 510006 (China); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

2014-04-01

Graphical abstract: - Highlights: • A green facile chemical approach to control the dimensions of Ag nanoparticles–graphene oxide (AgNPs/GO) composites was performed at room temperature. • With decreasing ultrasonication time, the size of the Ag nanoparticles decreased and became uniformly distributed over the surface of the GO nanosheets. • The as-prepared AgNPs/rGO composite films were then formed using a spin coating method and reduced at 500 °C under N{sub 2}/H{sub 2} gas flow for 1 h. • The lowest sheet resistance of 270 Ω/sq was obtained in the film corresponding to 1 min of ultrasonication, which showed a 40 times lower resistivity than the rGO film (10.93 kΩ/sq). - Abstract: A green facile chemical approach to control the dimensions of Ag nanoparticles–graphene oxide (AgNPs/GO) composites was performed by the in situ ultrasonication of a mixture of AgNO{sub 3} and graphene oxide solutions with the assistance of vitamin C acting as an environmentally friendly reducing agent at room temperature. With decreasing ultrasonication time, the size of the Ag nanoparticles decreased and became uniformly distributed over the surface of the GO nanosheets. The as-prepared AgNPs/rGO composite films were then formed using a spin coating method and reduced at 500 °C under N{sub 2}/H{sub 2} gas flow for 1 h. Four-point probe measurements showed that the sheet resistance of the AgNPs/rGO films decreased with decreasing AgNPs size. The lowest sheet resistance of 270 Ω/sq was obtained in the film corresponding to 1 min of ultrasonication, which showed a 40 times lower resistivity than the rGO film (10.93 kΩ/sq). The formation mechanisms of the as-prepared AgNPs/rGO films are proposed. This study provides a guide to controlling the dimensions of AgNPs/rGO films, which might hold promise as advanced materials for a range of analytical applications, such as catalysis, sensors and microchips.

Green synthesis of high conductivity silver nanoparticle-reduced graphene oxide composite films

International Nuclear Information System (INIS)

Dinh, D.A.; Hui, K.S.; Hui, K.N.; Cho, Y.R.; Zhou, Wei; Hong, Xiaoting; Chun, Ho-Hwan

2014-01-01

Graphical abstract: - Highlights: • A green facile chemical approach to control the dimensions of Ag nanoparticles–graphene oxide (AgNPs/GO) composites was performed at room temperature. • With decreasing ultrasonication time, the size of the Ag nanoparticles decreased and became uniformly distributed over the surface of the GO nanosheets. • The as-prepared AgNPs/rGO composite films were then formed using a spin coating method and reduced at 500 °C under N 2 /H 2 gas flow for 1 h. • The lowest sheet resistance of 270 Ω/sq was obtained in the film corresponding to 1 min of ultrasonication, which showed a 40 times lower resistivity than the rGO film (10.93 kΩ/sq). - Abstract: A green facile chemical approach to control the dimensions of Ag nanoparticles–graphene oxide (AgNPs/GO) composites was performed by the in situ ultrasonication of a mixture of AgNO 3 and graphene oxide solutions with the assistance of vitamin C acting as an environmentally friendly reducing agent at room temperature. With decreasing ultrasonication time, the size of the Ag nanoparticles decreased and became uniformly distributed over the surface of the GO nanosheets. The as-prepared AgNPs/rGO composite films were then formed using a spin coating method and reduced at 500 °C under N 2 /H 2 gas flow for 1 h. Four-point probe measurements showed that the sheet resistance of the AgNPs/rGO films decreased with decreasing AgNPs size. The lowest sheet resistance of 270 Ω/sq was obtained in the film corresponding to 1 min of ultrasonication, which showed a 40 times lower resistivity than the rGO film (10.93 kΩ/sq). The formation mechanisms of the as-prepared AgNPs/rGO films are proposed. This study provides a guide to controlling the dimensions of AgNPs/rGO films, which might hold promise as advanced materials for a range of analytical applications, such as catalysis, sensors and microchips

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

Science.gov (United States)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Science.gov (United States)

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Directory of Open Access Journals (Sweden)

Gunter Hagen

2011-08-01

Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Direct Growth of Graphene Films on 3D Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors.

Science.gov (United States)

Song, Xuefen; Sun, Tai; Yang, Jun; Yu, Leyong; Wei, Dacheng; Fang, Liang; Lu, Bin; Du, Chunlei; Wei, Dapeng

2016-07-06

Conformal graphene films have directly been synthesized on the surface of grating microstructured quartz substrates by a simple chemical vapor deposition process. The wonderful conformality and relatively high quality of the as-prepared graphene on the three-dimensional substrate have been verified by scanning electron microscopy and Raman spectra. This conformal graphene film possesses excellent electrical and optical properties with a sheet resistance of 80% (at 550 nm), which can be attached with a flat graphene film on a poly(dimethylsiloxane) substrate, and then could work as a pressure-sensitive sensor. This device possesses a high-pressure sensitivity of -6.524 kPa(-1) in a low-pressure range of 0-200 Pa. Meanwhile, this pressure-sensitive sensor exhibits super-reliability (≥5000 cycles) and an ultrafast response time (≤4 ms). Owing to these features, this pressure-sensitive sensor based on 3D conformal graphene is adequately introduced to test wind pressure, expressing higher accuracy and a lower background noise level than a market anemometer.

Screen-printed piezoceramic thick films for miniaturised devices

DEFF Research Database (Denmark)

Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

2007-01-01

machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

Promising applications of graphene and graphene-based nanostructures

Science.gov (United States)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-06-01

The present article is a review of research works on promising applications of graphene and graphene-based nanostructures. It contains five main scientific subjects. The first one is the research on graphene-based transparent and flexible conductive films for displays and electrodes: efficient method ensuring uniform and controllable deposition of reduced graphene oxide thin films over large areas, large-scale pattern growth of graphene films for stretchble transparent electrodes, utilization of graphene-based transparent conducting films and graphene oxide-based ones in many photonic and optoelectronic devices and equipments such as the window electrodes of inorganic, organic and dye-sensitized solar cells, organic light-emitting diodes, light-emitting electrochemical cells, touch screens, flexible smart windows, graphene-based saturated absorbers in laser cavities for ultrafast generations, graphene-based flexible, transparent heaters in automobile defogging/deicing systems, heatable smart windows, graphene electrodes for high-performance organic field-effect transistors, flexible and transparent acoustic actuators and nanogenerators etc. The second scientific subject is the research on conductive inks for printed electronics to revolutionize the electronic industry by producing cost-effective electronic circuits and sensors in very large quantities: preparing high mobility printable semiconductors, low sintering temperature conducting inks, graphene-based ink by liquid phase exfoliation of graphite in organic solutions, and developing inkjet printing technique for mass production of high-quality graphene patterns with high resolution and for fabricating a variety of good-performance electronic devices, including transparent conductors, embedded resistors, thin-film transistors and micro supercapacitors. The third scientific subject is the research on graphene-based separation membranes: molecular dynamics simulation study on the mechanisms of the transport of

Graphene derivatives/Fe{sub 3}O{sub 4}/polymer nanocomposite films: Optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Hatel, Rhizlane [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco); Goumri, Meryem [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco); XLIM UMR 7252- University of Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Ratier, Bernard [XLIM UMR 7252- University of Limoges/CNRS, 123 Avenue Albert Thomas, 87060 Limoges Cedex (France); Baitoul, Mimouna, E-mail: baitoul@yahoo.fr [University Sidi Mohammed Ben Abdellah, Faculty of Sciences Dhar El Mahraz, Laboratory of Solid State Physics, Group of Polymers and Nanomaterials, PO Box 1796, Atlas, Fez 30000 (Morocco)

2017-06-01

This paper reports a simple solution casting method for the preparation of nanocomposite films in which graphene oxide (GO)/Fe{sub 3}O{sub 4} nanocomposites are incorporated into poly (vinyl alcohol) (PVA) matrix. The films obtained with different weight percent of GO/Fe{sub 3}O{sub 4} (0.5, 0.7 and 1 wt%) are subjected an in situ chemical and thermal reduction in order to explore the evolution and interactions between these components under different treatments and get an insight into on how this can affects the optical and electrical properties of these nanocomposites. Characterization was carried out using, UV–Vis absorption, Photoluminescence, electrical conductivity measurements, Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy. Strong covalent functionalization occurs between the polymer and graphene derivatives (GD)/Fe{sub 3}O{sub 4} hybrids. The experimental results obtained for our nanocomposites films exhibit significant enhancement in properties highlighted the efficiency of the in situ thermal reduction. The high absorption with strong photoluminescence and electrical conductivity achieved might promote these nanocomposites for opto-electronic devices in near future. - Highlights: • Novel inorganic-organic hybrid flexible films were successfully prepared. • Good interfacial interaction between the graphene/Fe{sub 3}O{sub 4} and the hydroxyl-rich PVA. • Optical and electrical properties of Graphene Derivatives/Fe{sub 3}O{sub 4}/PVA were investigated. • Thermally reduced GO/Fe{sub 3}O{sub 4}/PVA films show high absorption and strong photoluminescence.