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Sample records for thick amorphous layer

  1. The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors

    International Nuclear Information System (INIS)

    Hunter, David M.; Belev, Gueorgi; DeCrescenzo, Giovanni; Kasap, Safa O.; Mainprize, James G.; Rowlands, J. A.; Smith, Charles; Tuemer, Tuemay; Verpakhovski, Vladimir; Yin Shi; Yaffe, Martin J.

    2007-01-01

    Blocking layers are used to reduce leakage current in amorphous selenium detectors. The effect of the thickness of the blocking layer on the presampling modulation transfer function (MTF) and on dark current was experimentally determined in prototype single-line CCD-based amorphous selenium (a-Se) x-ray detectors. The sampling pitch of the detectors evaluated was 25 μm and the blocking layer thicknesses varied from 1 to 51 μm. The blocking layers resided on the signal collection electrodes which, in this configuration, were used to collect electrons. The combined thickness of the blocking layer and a-Se bulk in each detector was ∼200 μm. As expected, the dark current increased monotonically as the thickness of the blocking layer was decreased. It was found that if the blocking layer thickness was small compared to the sampling pitch, it caused a negligible reduction in MTF. However, the MTF was observed to decrease dramatically at spatial frequencies near the Nyquist frequency as the blocking layer thickness approached or exceeded the electrode sampling pitch. This observed reduction in MTF is shown to be consistent with predictions of an electrostatic model wherein the image charge from the a-Se is trapped at a characteristic depth within the blocking layer, generally near the interface between the blocking layer and the a-Se bulk

  2. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    International Nuclear Information System (INIS)

    Dai, X.H.; Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z.; Ma, L.X.; Zhao, H.D.; Liu, B.T.

    2015-01-01

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La 0.5 Sr 0.5 CoO 3 /PbZr 0.4 Ti 0.6 O 3 /La 0.5 Sr 0.5 CoO 3 (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm 2 , small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories

  3. 4.0-nm-thick amorphous Nb–Ni film as a conducting diffusion barrier layer for integrating ferroelectric capacitor on Si

    Energy Technology Data Exchange (ETDEWEB)

    Dai, X.H. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Guo, J.X.; Zhang, L.; Jia, D.M.; Qi, C.G.; Zhou, Y.; Li, X.H.; Shi, J.B.; Fu, Y.J.; Wang, Y.L.; Lou, J.Z. [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China); Ma, L.X. [Department of Physics, Blinn College, Bryan, TX 77805 (United States); Zhao, H.D. [College of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300401 (China); Liu, B.T., E-mail: btliu@hbu.cn [Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science & Technology, Hebei University, Hebei 071002 (China)

    2015-10-05

    Highlights: • 4-nm-thick amorphous Nb–Ni film is first used as the conducting barrier layer. • No obvious interdiffusion/reaction can be found from the LSCO/PZT/LSCO/Nb–Ni/Si. • The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties. • Ultrathin amorphous Nb–Ni film is ideal to fabricate silicon-based FRAM. - Abstract: We have successfully integrated La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/PbZr{sub 0.4}Ti{sub 0.6}O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PZT/LSCO) capacitors on silicon substrate using a ∼4.0-nm-thick amorphous Nb–Ni film as the conducting diffusion barrier layer. Transmission electron microscopy technique confirms that the Nb–Ni film is still amorphous after fabrication of the capacitors, and the interfaces related to Nb–Ni are clean and sharp without any findable interdiffusion/reaction. The LSCO/PZT/LSCO capacitor, measured at 5 V, possesses very good properties, such as large remanent polarization of ∼22.1 μC/cm{sup 2}, small coercive voltage of ∼1.27 V, good fatigue-resistance, and small pulse width dependence, implying that ultrathin amorphous Nb–Ni film is ideal as the conducting diffusion barrier layer to fabricate high-density silicon-based ferroelectric random access memories.

  4. Direct measurements of the velocity and thickness of ''explosively'' propagating buried molten layers in amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Jellison, G.E. Jr.; Pennycook, S.J.; Withrow, S.P.; Mashburn, D.N.

    1986-01-01

    Simultaneous infrared (1152 nm) and visible (633 nm) reflectivity measurements with nanosecond resolution were used to study the initial formation and subsequent motion of pulsed KrF laser-induced ''explosively'' propagating buried molten layers in ion implantation-amorphized silicon. The buried layer velocity decreases with depth below the surface, but increases with KrF laser energy density; a maximum velocity of about 14 m/s was observed, implying an undercooling-velocity relationship of approx. 14 K/(m/s). Z-contrast scanning transmission electron microscopy was used to form a direct chemical image of implanted Cu ions transported by the buried layer and showed that the final buried layer thickness was <15 nm

  5. The application of thick hydrogenated amorphous silicon layers to charged particle and x-ray detection

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; Street, R.A.

    1989-04-01

    We outline the characteristics of thick hydrogenated amorphous silicon layers which are optimized for the detection of charged particles, x-rays and γ-rays. Signal amplitude as a function of the linear energy transfer of various particles are given. Noise sources generated by the detector material and by the thin film electronics - a-Si:H or polysilicon proposed for pixel position sensitive detectors readout are described, and their relative amplitudes are calculated. Temperature and neutron radiation effects on leakage currents and the corresponding noise changes are presented. 17 refs., 12 figs., 2 tabs

  6. Amorphous surface layers in Ti-implanted Fe

    International Nuclear Information System (INIS)

    Knapp, J.A.; Follstaedt, D.M.; Picraux, S.T.

    1979-01-01

    Implanting Ti into high-purity Fe results in an amorphous surface layer which is composed of not only Fe and Ti, but also C. Implantations were carried out at room temperature over the energy range 90 to 190 keV and fluence range 1 to 2 x 10 16 at/cm 2 . The Ti-implanted Fe system has been characterized using transmission electron microscopy (TEM), ion backscattering and channeling analysis, and (d,p) nuclear reaction analysis. The amorphous layer was observed to form at the surface and grow inward with increasing Ti fluence. For an implant of 1 x 10 17 Ti/cm 2 at 180 keV the layer thickness was 150 A, while the measured range of the implanted Ti was approx. 550 A. This difference is due to the incorporation of C into the amorphous alloy by C being deposited on the surface during implantation and subsequently diffusing into the solid. Our results indicate that C is an essential constituent of the amorphous phase for Ti concentrations less than or equal to 10 at. %. For the 1 x 10 17 Ti/cm 2 implant, the concentration of C in the amorphous phase was approx. 25 at. %, while that of Ti was only approx. 3 at. %. A higher fluence implant of 2 x 10 17 Ti/cm 2 produced an amorphous layer with a lower C concentration of approx. 10 at. % and a Ti concentration of approx. 20 at. %

  7. Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

    International Nuclear Information System (INIS)

    Yugov, A. A.; Malahov, S. S.; Donskov, A. A.; Duhnovskii, M. P.; Knyazev, S. N.; Kozlova, Yu. P.; Yugova, T. G.; Belogorokhov, I. A.

    2016-01-01

    The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al_2O_3 template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN epitaxial layer self-separation from the substrate is revealed. The titanium-nanolayer thickness at which thick GaN layer is reproducibly self-separated is within 20–40 nm.

  8. Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer

    Science.gov (United States)

    Asgary, Somayeh; Hantehzadeh, Mohammad Reza; Ghoranneviss, Mahmood

    2017-11-01

    The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).

  9. Thick and low-stress PECVD amorphous silicon for MEMS applications

    International Nuclear Information System (INIS)

    Iliescu, Ciprian; Chen Bangtao

    2008-01-01

    This paper presents a solution for the deposition of thick amorphous silicon (α-Si:H) in PECVD reactors for MEMS applications, such as sacrificial layer or mask layer for dry or wet etching of glass. This achievement was possible by tuning the deposition parameters to a 'zero' value of the residual stress in the α-Si:H layer. The influence of the process parameters, such as power, frequency mode, temperature, pressure and SiH 4 /Ar flow rates for tuning the residual stress and for a good deposition rate is analyzed. The deposition of low-stress and thick (more than 12 µm in our case) α-Si:H layers was possible without generation of hillock defects (previously reported in literature for layers thicker then 2 µm). Finally, the paper presents some MEMS applications of such a deposited α-Si:H layer: masking layer for deep wet etching as well as dry etching of glass, and sacrificial layer for dry or wet release

  10. Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

    International Nuclear Information System (INIS)

    Au, V; Charles, C; Boswell, R W

    2006-01-01

    The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

  11. Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oya, Naoki [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Toko, Kaoru, E-mail: toko@bk.tsukuba.ac.jp [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, Noriyuki; Yoshizawa, Noriko [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)

    2015-05-29

    Amorphous germanium (a-Ge) thin films were directly crystallized on flexible plastic substrates at 325 °C using Al-induced crystallization. The thickness of the plastic substrate strongly influenced the crystal quality of the resulting polycrystalline Ge layers. Using a thicker substrate lowered the stress on the a-Ge layer during annealing, which increased the grain size and fraction of (111)-oriented grains within the Ge layer. Employing a 125-μm-thick substrate led to 95% (111)-oriented Ge with grains having an average size of 100 μm. Transmission electron microscopy demonstrated that the Ge grains had a low-defect density. Production of high-quality Ge films on plastic substrates allows for the possibility for developing Ge-based electronic and optical devices on inexpensive flexible substrates. - Highlights: • Polycrystalline Ge thin films are directly formed on flexible plastic substrates. • Al-induced crystallization allows the low-temperature growth (325 °C) of amorphous Ge. • The substrate bending during annealing strongly influences the crystal quality of poly-Ge. • A thick substrate (125 μm) leads to 95% (111)-oriented Ge with grains 100 μm in size.

  12. Amorphous silicon pixel layers with cesium iodide converters for medical radiography

    International Nuclear Information System (INIS)

    Jing, T.; Cho, G.; Goodman, C.A.

    1993-11-01

    We describe the properties of evaporated layers of Cesium Iodide (Thallium activated) deposited on substrates that enable easy coupling to amorphous silicon pixel arrays. The CsI(Tl) layers range in thickness from 65 to 220μm. We used the two-boat evaporator system to deposit CsI(Tl) layers. This system ensures the formation of the scintillator film with homogenous thallium concentration which is essential for optimizing the scintillation light emission efficiency. The Tl concentration was kept to 0.1--0.2 mole percent for the highest light output. Temperature annealing can affect the microstructure as well as light output of the CsI(Tl) film. 200--300C temperature annealing can increase the light output by a factor of two. The amorphous silicon pixel arrays are p-i-n diodes approximately lμm thick with transparent electrodes to enable them to detect the scintillation light produced by X-rays incident on the CsI(Tl). Digital radiography requires a good spatial resolution. This is accomplished by making the detector pixel size less then 50μm. The light emission from the CsI(Tl) is collimated by techniques involving the deposition process on pattered substrates. We have measured MTF of greater than 12 line pairs per mm at the 10% level

  13. Amorphous-tetrahedral diamondlike carbon layered structures resulting from film growth energetics

    Science.gov (United States)

    Siegal, M. P.; Barbour, J. C.; Provencio, P. N.; Tallant, D. R.; Friedmann, T. A.

    1998-08-01

    High-resolution transmission electron microscopy (HRTEM) shows that amorphous-tetrahedral diamondlike carbon (a-tC) films grown by pulsed-laser deposition on Si(100) consist of three-to-four layers, depending on the growth energetics. We estimate the density of each layer using both HRTEM image contrast and Rutherford backscattering spectrometry. The first carbon layer and final surface layer have relatively low density. The bulk of the film between these two layers has higher density. For films grown under the most energetic conditions, there exists a superdense a-tC layer between the interface and bulk layers. The density of all four layers, and the thickness of the surface and interfacial layers, correlate well with the energetics of the depositing carbon species.

  14. Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

    Science.gov (United States)

    Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

    2017-02-01

    In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

  15. High-frequency permeability in double-layered structure of amorphous Co-Ta-Zr films

    International Nuclear Information System (INIS)

    Ochiai, Y.; Hayakawa, M.; Hayashi, K.; Aso, K.

    1988-01-01

    The high-frequency permeability of amorphous Co-Ta-Zr films was studied and the frequency dependence was described in terms of the eddy-current-loss formula. For the double-layered structure intervened with SiO 2 film, the degradation of the permeability became apparent with the decrease of SiO 2 thickness

  16. Inverted amorphous silicon solar cell utilizing cermet layers

    Science.gov (United States)

    Hanak, Joseph J.

    1979-01-01

    An amorphous silicon solar cell incorporating a transparent high work function metal cermet incident to solar radiation and a thick film cermet contacting the amorphous silicon opposite to said incident surface.

  17. Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

    Directory of Open Access Journals (Sweden)

    Yang-Shin Lin

    2011-01-01

    Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

  18. Structural characterization of amorphous Fe-Si and its recrystallized layers

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Ishimaru, Manabu; Hirotsu, Yoshihiko; Valdez, James A.; Sickafus, Kurt E.

    2006-01-01

    We have synthesized amorphous Fe-Si thin layers and investigated their microstructure using transmission electron microscopy (TEM). Si single crystals with (1 1 1) orientation were irradiated with 120 keV Fe + ions to a fluence of 4.0 x 10 17 cm -2 at cryogenic temperature (120 K), followed by thermal annealing at 1073 K for 2 h. A continuous amorphous layer with a bilayered structure was formed on the topmost layer of the Si substrate in the as-implanted specimen: the upper layer was an amorphous Fe-Si, while the lower one was an amorphous Si. After annealing, the amorphous bilayer crystallized into a continuous β-FeSi 2 thin layer

  19. Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

    Science.gov (United States)

    Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

    2009-06-01

    Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

  20. Low-temperature interface reactions in layered Au/Sb films: In situ investigation of the formation of an amorphous phase

    Science.gov (United States)

    Boyen, H.-G.; Cossy-Favre, A.; Oelhafen, P.; Siber, A.; Ziemann, P.; Lauinger, C.; Moser, T.; Häussler, P.; Baumann, F.

    1995-01-01

    Photoelectron-spectroscopy methods combined with electrical-resistance measurements were employed to study the effects of intermixing at Au/Sb interfaces at low temperatures. For the purpose of characterizing the growth processes of the intermixed phase on a ML scale, Au/Sb bilayers (layer thicknesses DAu=0.5-75 ML and DSb=150 ML) were evaporated at 77 K and the different in situ techniques allowed a comparison to vapor-quenched amorphous AuxSb100-x alloys. For Au thicknesses between 0.5 and 0.9 ML, a change from a semiconducting to a metallic behavior of the samples has been detected, as indicated by the development of a steplike photoelectron intensity at the Fermi level. Evidence has been found that for Au coverages quenched amorphous alloys. Variation of the deposition temperature Ts revealed that an amorphous interface layer is only formed for Ts<= 220 K. This is consistent with the fact that for multilayers with large modulation lengths containing unreacted polycrystalline Au and Sb layers, long-range interdiffusion is found to set in at temperatures above 230 K. This interdiffusion, however, results in the formation of polycrystalline Au-Sb alloys.

  1. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  2. Convective heat transfer enhancement using Carbon nanofibers (CNFs): influence of amorphous carbon layer on heat transfer performance

    NARCIS (Netherlands)

    Taha, T.J.; Lefferts, Leonardus; van der Meer, Theodorus H.

    2013-01-01

    In this work, an experimental heat transfer investigation was carried out to investigate the combined influence of both amorphous carbon (a-C) layer thickness and carbon nanofibers (CNFs) on the convective heat transfer behavior. Synthesis of these carbon nano structures was achieved using catalytic

  3. Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

    Science.gov (United States)

    Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

    2017-09-01

    The presence of an amorphous surface layer that coats a crystalline core has been proposed for many biominerals, including bone mineral. In parallel, transient amorphous precursor phases have been proposed in various biomineralization processes, including bone biomineralization. Here we propose a methodology to investigate the origin of these amorphous environments taking the bone tissue as a key example. This study relies on the investigation of a bone tissue sample and its comparison with synthetic calcium phosphate samples, including a stoichiometric apatite, an amorphous calcium phosphate sample, and two different biomimetic apatites. To reveal if the amorphous environments in bone originate from an amorphous surface layer or a transient amorphous precursor phase, a combined solid-state nuclear magnetic resonance (NMR) experiment has been used. The latter consists of a double cross polarization 1 H→ 31 P→ 1 H pulse sequence followed by a 1 H magnetization exchange pulse sequence. The presence of an amorphous surface layer has been investigated through the study of the biomimetic apatites; while the presence of a transient amorphous precursor phase in the form of amorphous calcium phosphate particles has been mimicked with the help of a physical mixture of stoichiometric apatite and amorphous calcium phosphate. The NMR results show that the amorphous and the crystalline environments detected in our bone tissue sample belong to the same particle. The presence of an amorphous surface layer that coats the apatitic core of bone apatite particles has been unambiguously confirmed, and it is certain that this amorphous surface layer has strong implication on bone tissue biogenesis and regeneration. Questions still persist on the structural organization of bone and biomimetic apatites. The existing model proposes a core/shell structure, with an amorphous surface layer coating a crystalline bulk. The accuracy of this model is still debated because amorphous calcium

  4. Optimized spacer layer thickness for plasmonic-induced enhancement of photocurrent in a-Si:H

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, Z. M., E-mail: zaki.saleh@aauj.edu, E-mail: zakimsaleh@yahoo.com; Nasser, H.; Özkol, E.; Günöven, M.; Abak, K. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey); Canli, S. [Middle East Technical University, Central Laboratory (Turkey); Bek, A.; Turan, R. [Middle East Technical University, Center for Solar Energy Research and Applications (GÜNAM) (Turkey)

    2015-10-15

    Plasmonic interfaces consisting of silver nanoparticles of different sizes (50–100 nm) have been processed by the self-assembled dewetting technique and integrated to hydrogenated amorphous silicon (a-Si:H) using SiNx spacer layers to investigate the dependence of optical trapping enhancement on spacer layer thickness through the enhancements in photocurrent. Samples illuminated from the a-Si:H side exhibit a localized surface plasmon resonance (LSPR) that is red-shifted with the increasing particle size and broadened into the red with the increasing spacer layer thickness. The photocurrent measured in a-Si:H is not only consistent with the red-shift and broadening of the LSPR, but exhibits critical dependence on the spacer layer thickness also. The samples with plasmonic interfaces and a SiNx spacer layer exhibit appreciable enhancement of photocurrent compared with flat a-Si:H reference depending on the size of the Ag nanoparticle. Simulations conducted on one-dimensional square structures exhibit electric fields that are localized near the plasmonic structures but extend appreciably into the higher refractive index a-Si:H. These simulations produce a clear red-shift and broadening of extinction spectra for all spacer layer thicknesses and predict an enhancement in photocurrent in agreement with experimental results. The spectral dependence of photocurrent for six plasmonic interfaces with different Ag nanoparticle sizes and spacer layer thicknesses are correlated with the optical spectra and compared with the simulations to predict an optimal spacer layer thickness.

  5. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  6. Technique for determination of elastic limit of micron band-thick amorphous

    International Nuclear Information System (INIS)

    Zakharov, E.K.; Pol'dyaeva, G.P.; Tret'yakov, B.N.

    1984-01-01

    A method is suggested to determine the elastic limit of micron-thick amorphous band under bending. The elastic limit is determined by bending an amorphous band sample around a series of cylindrical mandrels of gradually decreasing radius. Experimental data on measuring the elastic limit of some amorphous iron base alloys according to the suggested technique are presented. The elastic limit of amorphous alloys is shown to lie in the 3140-4110 MPa range depending on chemical composition, which is about 2-2.5 times higher as compared to high-strength crystal alloys

  7. Formation of amorphous layers by irradiation

    International Nuclear Information System (INIS)

    Bourgoin, J.C.

    1979-01-01

    When an ordered solid is irradiated with heavy energy particles, disorder is produced. When the irradiation dose exceeds a so-called critical dose, the irradiated area of the solid becomes uniformly disordered. Mention is first made of the nature, concentration and distribution of the defects created by a heavy energy particle. The description is then given -solely with respect to semiconductors- of the effect of the various parameters on the critical dose energy and nature of the ion, nature and temperature of the solid, irradiation flux. The physical properties (electronic and thermodynamic types) and the uniformly disordered areas are briefly discussed and these properties are compared with those of amorphous semiconductor layers fabricated by evaporation. It is concluded that the evaporated and irradiated layers are similar in nature. It is suggested that the transformation of an irradiated crystalline area into an amorphous one occurs when the Gibbs energy of the crystal become greater than the Gibbs energy of the amorphous one [fr

  8. Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

    International Nuclear Information System (INIS)

    Chun, B.S.; Kim, Y.K.; Hwang, J.Y.; Yim, H.I.; Rhee, J.R.; Kim, T.W.

    2007-01-01

    Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic Ni 16 Fe 62 Si 8 B 14 free layers, were investigated. NiFeSiB has a lower saturation magnetization (M s : 800 emu/cm 3 ) than Co 90 Fe 10 and a higher anisotropy constant (K u : 2700 erg/cm 3 ) than Ni 80 Fe 20 . By increasing the free layer thickness, the tunnel magnetoresistance (TMR) ratio of up to 41% was achieved and it exhibited a much lower switching field (H sw ) than the conventionally used CoFe free layer MTJ. Furthermore, by inserting a thin CoFe layer (1 nm) at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were enhanced

  9. Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Allec, N; Abbaszadeh, S; Karim, K S, E-mail: nallec@uwaterloo.ca [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo N2L 3G1 (Canada)

    2011-09-21

    The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml{sup -1} in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

  10. Single-layer and dual-layer contrast-enhanced mammography using amorphous selenium flat panel detectors

    Science.gov (United States)

    Allec, N.; Abbaszadeh, S.; Karim, K. S.

    2011-09-01

    The accumulation of injected contrast agents allows the image enhancement of lesions through the use of contrast-enhanced mammography. In this technique, the combination of two acquired images is used to create an enhanced image. There exist several methods to acquire the images to be combined, which include dual energy subtraction using a single detection layer that suffers from motion artifacts due to patient motion between image acquisition. To mitigate motion artifacts, a detector composed of two layers may be used to simultaneously acquire the low and high energy images. In this work, we evaluate both of these methods using amorphous selenium as the detection material to find the system parameters (tube voltage, filtration, photoconductor thickness and relative intensity ratio) leading to the optimal performance. We then compare the performance of the two detectors under the variation of contrast agent concentration, tumor size and dose. The detectability was found to be most comparable at the lower end of the evaluated factors. The single-layer detector not only led to better contrast, due to its greater spectral separation capabilities, but also had lower quantum noise. The single-layer detector was found to have a greater detectability by a factor of 2.4 for a 2.5 mm radius tumor having a contrast agent concentration of 1.5 mg ml-1 in a 4.5 cm thick 50% glandular breast. The inclusion of motion artifacts in the comparison is part of ongoing research efforts.

  11. Distribution of electrode elements near contacts and junction layers in amorphous silicon solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Imura, T; Hiraki, A; Okamoto, H

    1982-01-01

    Auger electron spectroscopy with the ion sputter-etching technique and secondary ion mass spectroscopy have been utilized to investigate the depth distribution of Sn and In electrode elements in amorphous silicon layers of the photovoltaic device. The comparison of the depth profiles with the cell performances has indicated that the presence of the reduced state of In in both the p and i-layers affects the solar cell performance, but that of Sn does not. It was also shown that layered structure of In-Sn oxide (ITO)/SnO2 effectively prevents the diffusion of In and achieves high cell performances, having the thickness of the SnO2 layer about 200 A. 8 references.

  12. Dependence of magnetic properties on ferromagnetic layer thickness in trilayer Co/Ge/Co films with granular semiconducting spacer

    International Nuclear Information System (INIS)

    Patrin, G.S.; Lee, C.-G.; Turpanov, I.A.; Zharkov, S.M.; Velikanov, D.A.; Maltsev, V.K.; Li, L.A.; Lantsev, V.V.

    2006-01-01

    We have investigated the magnetic properties of trilayer films of Co-Ge-Co. At a fixed thickness of germanium of 3.5 nm, the formation and distribution of metastable amorphous and cubic phases depends on the thickness of the ferromagnetic layer. The portion of the stable hexagonal phase is affected, too. Possible mechanisms for forming the observed magnetic structure are discussed

  13. Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

    Science.gov (United States)

    Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

    2018-01-01

    The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

  14. Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

    2015-01-15

    Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

  15. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

    2015-07-06

    A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  16. Macular Choroidal Small-Vessel Layer, Sattler's Layer and Haller's Layer Thicknesses: The Beijing Eye Study.

    Science.gov (United States)

    Zhao, Jing; Wang, Ya Xing; Zhang, Qi; Wei, Wen Bin; Xu, Liang; Jonas, Jost B

    2018-03-13

    To study macular choroidal layer thickness, 3187 study participants from the population-based Beijing Eye Study underwent spectral-domain optical coherence tomography with enhanced depth imaging for thickness measurements of the macular small-vessel layer, including the choriocapillaris, medium-sized choroidal vessel layer (Sattler's layer) and large choroidal vessel layer (Haller's layer). In multivariate analysis, greater thickness of all three choroidal layers was associated (all P  0.05) associated with the prevalence of open-angle glaucoma or diabetic retinopathy. There was a tendency (0.07 > P > 0.02) toward thinner choroidal layers in chronic angle-closure glaucoma. The ratio of small-vessel layer thickness to total choroidal thickness increased (P layer and Haller's layer thickness to total choroidal thickness decreased. A higher ratio of small-vessel layer thickness to total choroidal thickness was significantly associated with a lower prevalence of AMD (early type, intermediate type, late geographic type). Axial elongation-associated and aging-associated choroidal thinning affected Haller's and Sattler's layers more markedly than the small-vessel layer. Non-exudative and exudative AMD, except for geographic atrophy, was associated with slightly increased choroidal thickness.

  17. Sputtering of amorphous carbon layers studied by laser induced fluorescence

    International Nuclear Information System (INIS)

    Pasch, E.

    1992-07-01

    In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

  18. Channel layer thickness dependence of In-Ti-Zn-O thin-film transistors fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhang, Q.; Shan, F. K.; Liu, G. X.; Liu, A.; Lee, W. J.; Shin, B. C.

    2014-01-01

    Amorphous indium-titanium-zinc-oxide (ITZO) thin-film transistors (TFTs) with various channel thicknesses were fabricated at room temperature by using pulsed laser deposition. The channel layer thickness (CLT) dependence of the TFTs was investigated. All the ITZO thin films were amorphous, and the surface roughnesses decreased slightly first and then increased with increasing CLT. With increasing CLT from 35 to 140 nm, the on/off current ratio and the field-effect mobility increased, and the subthreshold swing decreased. The TFT with a CLT of 210 nm exhibited the worst performance, while the ITZO TFT with a CLT of 140 nm exhibited the best performance with a subthreshold voltage of 2.86 V, a mobility of 53.9 cm 2 V -1 s -1 , a subthreshold swing of 0.29 V/decade and an on/off current ratio of 10 9 .

  19. Non-localized deformation in Cu−Zr multi-layer amorphous films under tension

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, C. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, H. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Department of Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta T6G 1H9 (Canada); Cao, Q.P.; Wang, X.D. [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Zhang, D.X. [State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027 (China); Hu, J.W. [Hangzhou Workers Amateur University, Hangzhou 310027 (China); Liaw, P.K. [Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 (United States); Jiang, J.Z., E-mail: jiangjz@zju.edu.cn [International Center for New-Structured Materials (ICNSM), Laboratory of New-Structured Materials, State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-09-05

    In metallic glasses (MGs), plastic deformation at room temperature is dominated by highly localized shear bands. Here we report the non-localized deformation under tension in Cu−Zr multi-layer MGs with a pure amorphous structure using large-scale atomistic simulations. It is demonstrated that amorphous samples with high layer numbers, composed of Cu{sub 64}Zr{sub 36} and Cu{sub 40}Zr{sub 60}, or Cu{sub 64}Zr{sub 36} and Cu{sub 50}Zr{sub 50}, present obviously non-localized deformation behavior. We reveal that the deformation behavior of the multi-layer-structured MG films is related but not determined by the deformation behavior of the composed individual layers. The criterion for the deformation mode change for MGs with a pure amorphous structure, in generally, was suggested, i.e., the competition between the elastic-energy density stored and the energy density needed for forming one mature shear band in MGs. Our results provide a promising strategy for designing tensile ductile MGs with a pure amorphous structure at room temperature. - Highlights: • Tensile deformation behaviors in multi-layer MG films. • Films with high layer numbers confirmed with a non-localized deformation behavior. • The deformation mode is reasonably controlled by whether U{sub p} larger than U{sub SB.}.

  20. Versatile technique for assessing thickness of 2D layered materials by XPS

    Science.gov (United States)

    Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

    2018-03-01

    X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

  1. Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition.

    Science.gov (United States)

    Ali, Saima; Juntunen, Taneli; Sintonen, Sakari; Ylivaara, Oili M E; Puurunen, Riikka L; Lipsanen, Harri; Tittonen, Ilkka; Hannula, Simo-Pekka

    2016-11-04

    The thermophysical properties of Al2O3/TiO2 nanolaminates deposited by atomic layer deposition (ALD) are studied as a function of bilayer thickness and relative TiO2 content (0%-100%) while the total nominal thickness of the nanolaminates was kept at 100 nm. Cross-plane thermal conductivity of the nanolaminates is measured at room temperature using the nanosecond transient thermoreflectance method. Based on the measurements, the nanolaminates have reduced thermal conductivity as compared to the pure amorphous thin films, suggesting that interfaces have a non-negligible effect on thermal transport in amorphous nanolaminates. For a fixed number of interfaces, we find that approximately equal material content of Al2O3 and TiO2 produces the lowest value of thermal conductivity. The thermal conductivity reduces with increasing interface density up to 0.4 nm(-1), above which the thermal conductivity is found to be constant. The value of thermal interface resistance approximated by the use of diffuse mismatch model was found to be 0.45 m(2) K GW(-1), and a comparative study employing this value supports the interpretation of non-negligible interface resistance affecting the overall thermal conductivity also in the amorphous limit. Finally, no clear trend in thermal conductivity values was found for nanolaminates grown at different deposition temperatures, suggesting that the temperature in the ALD process has a non-trivial while modest effect on the overall thermal conductivity in amorphous nanolaminates.

  2. The effect of oxygen on segregation-induced redistribution of rare-earth elements in silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Aleksandrov, O. V.

    2006-01-01

    A model of segregation-induced redistribution of impurities of rare-earth elements during solid-phase epitaxial crystallization of silicon layers amorphized by ion implantation is developed. This model is based on the assumption that a transition layer with a high mobility of atoms is formed at the interphase boundary on the side of a-Si; the thickness of this layer is governed by the diffusion length of vacancies in a-Si. The Er concentration profiles in Si implanted with both erbium and oxygen ions are analyzed in the context of the model. It shown that, in the case of high doses of implantation of rare-earth ions, it is necessary to take into account the formation of R m clusters (m = 4), where R denotes the atom of a rare-earth element, whereas, if oxygen ions are also implanted, formation of the complexes RO n (n = 3-6) should be taken into account; these complexes affect the transition-layer thickness and segregation coefficient

  3. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    International Nuclear Information System (INIS)

    Arora, H.; Malinowski, P. E.; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S.; Heremans, P.

    2015-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm 2 at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C 61 -butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10 12 Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO x as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment

  4. Amorphous indium-gallium-zinc-oxide as electron transport layer in organic photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Arora, H. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Phelma–Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble Cedex 01 (France); Malinowski, P. E., E-mail: pawel.malinowski@imec.be; Chasin, A.; Cheyns, D.; Steudel, S.; Schols, S. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heremans, P. [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, Katholieke Universiteit Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium)

    2015-04-06

    Amorphous indium-gallium-zinc-oxide (a-IGZO) is demonstrated as an electron transport layer (ETL) in a high-performance organic photodetector (OPD). Dark current in the range of 10 nA/cm{sup 2} at a bias voltage of −2 V and a high photoresponse in the visible spectrum were obtained in inverted OPDs with poly(3-hexylthiophene) and phenyl-C{sub 61}-butyric acid methyl ester active layer. The best results were obtained for the optimum a-IGZO thickness of 7.5 nm with specific detectivity of 3 × 10{sup 12} Jones at the wavelength of 550 nm. The performance of the best OPD devices using a-IGZO was shown to be comparable to state-of-the-art devices based on TiO{sub x} as ETL, with higher rectification achieved in reverse bias. Yield and reproducibility were also enhanced with a-IGZO, facilitating fabrication of large area OPDs. Furthermore, easier integration with IGZO-based readout backplanes can be envisioned, where the channel material can be used as photodiode buffer layer after additional treatment.

  5. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Dapeng Wang

    2018-04-01

    Full Text Available In this study, the initial electrical properties, positive gate bias stress (PBS, and drain current stress (DCS-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO thin-film transistors (TFTs with various active layer thicknesses (TIGZO are investigated. As the TIGZO increased, the turn-on voltage (Von decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm2·V−1·s−1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the TIGZO. The PBS results exhibit that the Von shift is aggravated as the TIGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various TIGZO values is revealed using current–voltage and capacitance–voltage (C–V measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source (Cgs curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the TIGZO value increased, the hump in the off state of the Cgs curve was gradually weakened.

  6. Interface morphology of Mo/Si multilayer systems with varying Mo layer thickness studied by EUV diffuse scattering.

    Science.gov (United States)

    Haase, Anton; Soltwisch, Victor; Braun, Stefan; Laubis, Christian; Scholze, Frank

    2017-06-26

    We investigate the influence of the Mo-layer thickness on the EUV reflectance of Mo/Si mirrors with a set of unpolished and interface-polished Mo/Si/C multilayer mirrors. The Mo-layer thickness is varied in the range from 1.7 nm to 3.05 nm. We use a novel combination of specular and diffuse intensity measurements to determine the interface roughness throughout the multilayer stack and do not rely on scanning probe measurements at the surface only. The combination of EUV and X-ray reflectivity measurements and near-normal incidence EUV diffuse scattering allows to reconstruct the Mo layer thicknesses and to determine the interface roughness power spectral density. The data analysis is conducted by applying a matrix method for the specular reflection and the distorted-wave Born approximation for diffuse scattering. We introduce the Markov-chain Monte Carlo method into the field in order to determine the respective confidence intervals for all reconstructed parameters. We unambiguously detect a threshold thickness for Mo in both sample sets where the specular reflectance goes through a local minimum correlated with a distinct increase in diffuse scatter. We attribute that to the known appearance of an amorphous-to-crystallization transition at a certain thickness threshold which is altered in our sample system by the polishing.

  7. A buffer-layer/a-SiO{sub x}:H(p) window-layer optimization for thin film amorphous silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jinjoo; Dao, Vinh Ai [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Shin, Chonghoon [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Hyeongsik [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Minbum; Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Doyoung [School of Electricity and Electronics, Ulsan College West Campus, Ulsan 680-749 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-11-01

    Amorphous silicon based (a-Si:H-based) solar cells with a buffer-layer/boron doped hydrogenated amorphous silicon oxide (a-SiO{sub x}:H(p)) window-layer were fabricated and investigated. In the first part, in order to reduce the Schottky barrier height at the fluorine doped tin oxide (FTO)/a-SiO{sub x}:H(p) window-layer heterointerface, we have used buffer-layer/a-SiO{sub x}:H(p) for the window-layer, in which boron doped hydrogenated amorphous silicon (a-Si:H(p)) or boron doped microcrystalline silicon (μc-Si:H(p)) is introduced as a buffer layer between the a-SiO{sub x}:H(p) and FTO of the a-Si:H-based solar cells. The a-Si:H-based solar cell using a μc-Si:H(p) buffer-layer shows the highest efficiency compared to the optimized bufferless, and a-Si:H(p) buffer-layer in the a-Si:H-based solar cells. This highest performance was attributed not only to the lower absorption of the μc-Si:H(p) buffer-layer but also to the lower Schottky barrier height at the FTO/window-layer interface. Then, we present the dependence of the built-in potential (V{sub bi}) and blue response of the devices on the inversion of activation energy (ξ) of the a-SiO{sub x}:H(p), in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. The enhancement of both V{sub bi} and blue response is observed, by increasing the value of ξ. The improvement of V{sub bi} and blue response can be ascribed to the enlargement of the optical gap of a-SiO{sub x}:H(p) films in the μc-Si:H(p)/a-SiO{sub x}:H(p) window-layer. Finally, the conversion efficiency was increased by 22.0%, by employing μc-Si:H(p) as a buffer-layer and raising the ξ of the a-SiO{sub x}:H(p), compared to the optimized bufferless case, with a 10 nm-thick a-SiO{sub x}:H(p) window-layer. - Highlights: • Low Schottky barrier height benefits fill factor, and open-circuit voltage (V{sub oc}). • High band gap is beneficial for short-circuit current density (J{sub sc}). • Boron doped microcrystalline silicon is a suitable buffer-layer for

  8. Characterization of oxide layers on amorphous Mg-based alloys by Auger electron spectroscopy with sputter depth profiling

    Energy Technology Data Exchange (ETDEWEB)

    Baunack, S.; Wolff, U. [Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresden, Postfach 270016, 01171, Dresden (Germany); Subba Rao, R.V. [Indira Ghandi Centre for Atomic Research, 603 102, Kalpakkam, Tamil Nadu (India)

    2003-04-01

    Amorphous ribbons of Mg-Y-TM-[Ag](TM: Cu, Ni), prepared by melt spinning, were subjected to electrochemical investigations. Oxide layers formed anodically under potentiostatic control in different electrolytes were investigated by AES and sputter depth profiling. Problems and specific features of characterization of the composition of oxide layers and amorphous ternary or quaternary Mg-based alloys have been investigated. In the alloys the Mg(KL{sub 23}L{sub 23}) peak exhibits a different shape compared to that in the pure element. Analysis of the peak of elastically scattered electrons proved the absence of plasmon loss features, characteristic of pure Mg, in the alloy. A different loss feature emerges in Mg(KL{sub 23}L{sub 23}) and Cu(L{sub 23}VV). The system Mg-Y-TM-[Ag] suffers preferential sputtering. Depletion of Mg and enrichment of TM and Y are found. This is attributed mainly to the preferential sputtering of Mg. Thickness and composition of the formed oxide layer depend on the electrochemical treatment. After removing the oxide by sputtering the concentration of the underlying alloy was found to be affected by the treatment. (orig.)

  9. Evolution of structure with Fe layer thickness in low dimensional Fe/Tb multilayered structures

    International Nuclear Information System (INIS)

    Harris, V.G.; Aylesworth, K.D.; Elam, W.T.; Koon, N.C.; Coehoorn, R.; Hoving, W.

    1992-01-01

    This paper reports on the atomic structure of a series of low-dimensional Fe/Tb multilayered structures which has been explored using a conversion-electron, extended x-ray absorption fine structure (EXAFS) technique. A structural transition from a close-packed amorphous structure to a body-centered crystalline structure is detected to occur over an Fe layer thickness range of 12.5 Angstrom to 15.0 Angstrom (Tb thickness is held constant at 4.5 Angstrom). Magnetic properties, specifically, magnetization, anisotropy field, and Kerr rotation angle, are measured and found to change significantly in response to this transition. Exploitation of the polarization properties of synchrotron radiation allowed for the description of the atomic structure both perpendicular and parallel to the sample plane

  10. Effect of Al2O3 insulator thickness on the structural integrity of amorphous indium-gallium-zinc-oxide based thin film transistors.

    Science.gov (United States)

    Kim, Hak-Jun; Hwang, In-Ju; Kim, Youn-Jea

    2014-12-01

    The current transparent oxide semiconductors (TOSs) technology provides flexibility and high performance. In this study, multi-stack nano-layers of TOSs were designed for three-dimensional analysis of amorphous indium-gallium-zinc-oxide (a-IGZO) based thin film transistors (TFTs). In particular, the effects of torsional and compressive stresses on the nano-sized active layers such as the a-IGZO layer were investigated. Numerical simulations were carried out to investigate the structural integrity of a-IGZO based TFTs with three different thicknesses of the aluminum oxide (Al2O3) insulator (δ = 10, 20, and 30 nm), respectively, using a commercial code, COMSOL Multiphysics. The results are graphically depicted for operating conditions.

  11. Influences of carbon content and coating carbon thickness on properties of amorphous CoSnO3@C composites as anode materials for lithium-ion batteries

    Science.gov (United States)

    Fan, Fuqiang; Fang, Guoqing; Zhang, Ruixue; Xu, Yanhui; Zheng, Junwei; Li, Decheng

    2014-08-01

    A series of core-shell carbon coated amorphous CoSnO3 (CoSnO3@C) with different carbon content are synthesized. Effects of carbon content and coating carbon thickness on the physical and electrochemical performances of the samples were studied in detail. The samples were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermal gravimetric analysis (TGA), galvanostatic charge-discharge and AC impedance spectroscopy, respectively. The results indicate that controlling the concentration of aqueous glucose solution influences the generation of in-situ carbon layer thickness. The optimal concentration of aqueous glucose solution, carbon content and carbon layer thickness are suggested as 0.25 M, 35.1% and 20 nm, respectively. CoSnO3@C composite prepared under the optimal conditions exhibits excellent cycling performance, whose reversible capacity could reach 491 mA h g-1 after 100 cycles.

  12. Influence of amorphous layers on the thermal conductivity of phononic crystals

    Science.gov (United States)

    Verdier, Maxime; Lacroix, David; Didenko, Stanislav; Robillard, Jean-François; Lampin, Evelyne; Bah, Thierno-Moussa; Termentzidis, Konstantinos

    2018-03-01

    The impact of amorphous phases around the holes and at the upper and lower free surfaces on thermal transport in silicon phononic membranes is studied. By means of molecular dynamics and Monte Carlo simulations, we explore the impact of the amorphous phase (oxidation and amorphous silicon), surfaces roughness, and a series of geometric parameters on thermal transport. We show that the crystalline phase drives the phenomena; the two main parameters are (i) the crystalline fraction between two holes and (ii) the crystalline thickness of the membranes. We reveal the hierarchical impact of nanostructurations on the thermal conductivity, namely, from the most resistive to the less resistive: the creation of holes, the amorphous phase around them, and the amorphization of the membranes edges. The surfaces or interfaces perpendicular to the heat flow hinder the thermal conductivity to a much greater extent than those parallel to the heat flow.

  13. Advantages of using amorphous indium zinc oxide films for window layer in Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Warasawa, Moe [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan); Kaijo, Akira [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, 229-0293 (Japan); Sugiyama, Mutsumi, E-mail: mutsumi@rs.noda.tus.ac.jp [Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510 (Japan)

    2012-01-01

    The advantages of using indium zinc oxide (IZO) films instead of conventional Ga-doped zinc oxide (ZnO:Ga) films for Cu(In,Ga)Se{sub 2} (CIGS) solar cells are described. The electrical properties of IZO are independent of film thickness. IZO films have higher mobility (30-40 cm{sup 2}/Vs) and lower resistivity (4-5 Multiplication-Sign 10{sup -4} {Omega} cm) compared to ZnO:Ga films deposited without intentional heating, because the number of grain boundaries in amorphous IZO films is small. The properties of a CIGS solar cell using IZO at the window layer were better than those obtained using a conventional ZnO:Ga at the window layer; moreover, the properties tended to be independent of thickness. These results indicate that use of IZO as a transparent conducting oxide layer is expected to increase the efficiency of CIGS solar cells.

  14. Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses.

    Science.gov (United States)

    Wang, Dapeng; Zhao, Wenjing; Li, Hua; Furuta, Mamoru

    2018-04-05

    In this study, the initial electrical properties, positive gate bias stress (PBS), and drain current stress (DCS)-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with various active layer thicknesses ( T IGZO ) are investigated. As the T IGZO increased, the turn-on voltage ( V on ) decreased, while the subthreshold swing slightly increased. Furthermore, the mobility of over 13 cm²·V −1 ·s −1 and the negligible hysteresis of ~0.5 V are obtained in all of the a-IGZO TFTs, regardless of the T IGZO . The PBS results exhibit that the V on shift is aggravated as the T IGZO decreases. In addition, the DCS-induced instability in the a-IGZO TFTs with various T IGZO values is revealed using current–voltage and capacitance–voltage ( C – V ) measurements. An anomalous hump phenomenon is only observed in the off state of the gate-to-source ( C gs ) curve for all of the a-IGZO TFTs. This is due to the impact ionization that occurs near the drain side of the channel and the generated holes that flow towards the source side along the back-channel interface under the lateral electric field, which cause a lowered potential barrier near the source side. As the T IGZO value increased, the hump in the off state of the C gs curve was gradually weakened.

  15. Thickness and composition of ultrathin SiO2 layers on Si

    International Nuclear Information System (INIS)

    Marel, C. van der; Verheijen, M.A.; Tamminga, Y.; Pijnenburg, R.H.W.; Tombros, N.; Cubaynes, F.

    2004-01-01

    Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO 2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO 2 layers (d) was determined from the XPS results using three different approaches: the 'standard' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the 'standard' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO 2 decreased. This effect may be related to interface states of oxygen, which have been

  16. Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

    International Nuclear Information System (INIS)

    Oliviero, E.; David, M. L.; Beaufort, M. F.; Barbot, J. F.; Fichtner, P. F. P.

    2013-01-01

    The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 °C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 °C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.

  17. Amorphous-crystalline interface evolution during Solid Phase Epitaxy Regrowth of SiGe films amorphized by ion implantation

    International Nuclear Information System (INIS)

    D'Angelo, D.; Piro, A.M.; Mirabella, S.; Bongiorno, C.; Romano, L.; Terrasi, A.; Grimaldi, M.G.

    2007-01-01

    Transmission Electron Microscopy was combined with Time Resolved Reflectivity to study the amorphous-crystalline (a-c) interface evolution during Solid Phase Epitaxy Regrowth (SPER) of Si 0.83 Ge 0.17 films deposited on Si by Molecular Beam Epitaxy and amorphized with Ge + ion implantation. Starting from the Si/SiGe interface, a 20 nm thick layer regrows free of defects with the same SPER rate of pure Si. The remaining SiGe regrows with planar defects and dislocations, accompanied by a decrease of the SPER velocity. The sample was also studied after implantation with B or P. In these cases, the SPER rate raises following the doping concentration profile, but no difference in the defect-free layer thickness was observed compared to the un-implanted sample. On the other hand, B or P introduction reduces the a-c interface roughness, while B-P co-implantation produces roughness comparable to the un-implanted sample

  18. Fabrication and characterization of contact layers in amorphous silicon solar cells

    International Nuclear Information System (INIS)

    Kolter, M.

    1993-04-01

    The production and characterisation of amorphous and microcrystalline n-doped layers (a-Si:H(n) and c-Si:H(n)) for thin film solar cells is described together contact investigations. The layers were produced in a plasma CVD. The electric conductivity was measured

  19. Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

    International Nuclear Information System (INIS)

    Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

    2005-01-01

    Amorphous TeO 2 thin film, sputtered in the O 2 +Ar(25%+75%) gas environment using a metallic tellurium target, has been identified as an attractive negative temperature coefficient of delay (TCD) material that can yield a temperature stable device when combined with a surface acoustic wave (SAW) device based on positive TCD material such as LiNbO 3 . The influence of amorphous TeO 2 over-layer on the SAW propagation characteristics (velocity and temperature coefficient of delay) of the SAW filters (36 and 70 MHz) based on 128 deg. rotated Y-cut X-propagating lithium niobate (128 deg. Y-X LiNbO 3 ) single crystal has been studied. It is found that 0.042 λ thick TeO 2 over-layer on a prefabricated SAW device operating at 36 MHz centre frequency, reduces the TCD of the device from 76 ppm deg. C -1 to almost zero (∼1.4 ppm deg. C -1 ) without deteriorating its efficiency and could be considered as a suitable alternative for temperature stable devices in comparison to conventional SiO 2 over-layer

  20. Uniaxial in-plane magnetization of iron nanolayers grown within an amorphous matrix

    Energy Technology Data Exchange (ETDEWEB)

    Ghafari, M., E-mail: mohammad.ghafari@kit.edu; Hahn, H. [Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing 210094 (China); Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Mattheis, R. [Leibniz Institute for Photonic Technology IPHT, Jena (Germany); McCord, J. [Institute for Materials Science, Kiel University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Brand, R. A. [Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Macedo, W. A. A. [Laboratório de Física Aplicada, Centro de Desenvolvimento da Tecnologia Nuclear (CDTN), 31270-901 Belo Horizonte, MG (Brazil)

    2014-08-18

    Conversion electron Mössbauer spectroscopy is used to determine the magnetic ground state at zero magnetic field of four-monolayer thick amorphous iron layers as part of a CoFeB-Fe multilayer stack. By comparing the intensities of the magnetic hyperfine field, an easy in-plane axis of the amorphous embedded Fe layer is verified, which is collinear to the uniaxial anisotropy axis of the neighboring amorphous CoFeB. Despite the soft magnetic character of the Fe layers, external fields up to 4 T perpendicular to the film plane are insufficient to completely align the embedded Fe moments parallel to the magnetic field due to a local disorder of the magnetic moments of the Fe atoms.

  1. Generation of amorphous surface layers in LiNbO3 by ion-beam irradiation: thresholding and boundary propagation

    International Nuclear Information System (INIS)

    Olivares, J.; Garcia, G.; Agullo-Lopez, F.; Agullo-Rueda, F.; Kling, A.; Soares, J.C.

    2005-01-01

    The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO 3 have been systematically determined as a function of ion fluence in the range 10 13 -10 15 cm -2 . At variance with irradiations at lower energies, an optically isotropic ('amorphous') homogeneous surface layer is generated whose thickness increases with fluence. These results have been associated with an electronic excitation mechanism. They are discussed in relation to the well-documented phenomenon of latent (amorphous) track generation under ion irradiation, requiring a threshold value S e,th for the electronic stopping power S e . Our optical data have yielded a value of ∼5 keV/nm for such a threshold, within the range reported by independent single-track measurements. The propagation of the amorphous boundary into the crystal during irradiation indicates that the threshold value decreases on increasing the fluence. Complementary Rutherford backscattering-channeling and micro-Raman (on samples irradiated at 30 MeV) experiments have been performed to monitor the induced structural changes. (orig.)

  2. The effect of layer thickness and composition on the kinetics of solid state reactions in the niobium-selenium system studied using superlattice reactants

    International Nuclear Information System (INIS)

    Fukuto, M.; Kevan, S.D.

    1997-01-01

    The ability to form an amorphous reaction intermediate by the low temperature interdiffusion of a modulated elemental reactant is shown to be a function of the overall composition as well as elemental layer thicknesses in the niobium-selenium system. For niobium-rich reactants, an amorphous reaction intermediate was observed to form upon low temperature annealing of reactants with modulation thicknesses less than 60 A. Further annealing of the amorphous intermediates led to the crystallization of Nb 2 Se, Nb 5 Se 4 or Nb 3 Se 4 depending upon the overall composition of the amorphous intermediate. Modulated elemental reactants with overall compositions containing more than two-thirds selenium were found to heterogeneously nucleate NbSe 2 at the reacting interfaces. The formation of the thermodynamically expected compounds Nb 2 Se 3 , NbSe 3 , and Nb 2 Se 9 at their respective compositions required extended high temperature annealing to react the dichalcogenide with the remaining elemental reactants. A striking difference between the evolution of the low angle diffraction patterns in these two composition regimes suggests the differences in the reaction kinetics result from a composition dependence of the diffusion coefficients. (orig.)

  3. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  4. The kinetics of solid phase epitaxy in As-doped buried amorphous silicon layers

    International Nuclear Information System (INIS)

    McCallum, J.C.

    1999-01-01

    Ion implantation is the principal method used to introduce dopants into silicon for fabrication of semiconductor devices. During ion implantation, damage accumulates in the crystalline silicon lattice and amorphisation may occur over the depth range of the ions if the implant dose is sufficiently high. As device dimensions shrink, the need to produce shallower and shallower highly-doped layers increases and the probability of amorphisation also increases. To achieve dopant-activation, the amorphous or damaged material must be returned to the crystalline state by thermal annealing. Amorphous silicon layers can be crystallised by the solid-state process of solid phase epitaxy (SPE) in which the amorphous layer transforms to crystalline silicon (c-Si) layer by layer using the underlying c-Si as a seed. The atomic mechanism that is responsible for the crystallisation is thought to involve highly-localised bond-breaking and rearrangement processes at the amorphous/crystalline (a/c) interface but the defect responsible for these bond rearrangements has not yet been identified. Since the bond breaking process necessarily generates dangling bonds, it has been suggested that the crystallisation process may solely involve the formation and migration of dangling bonds at the interface. One of the key factors which may shed further light on the nature of the SPE defect is the observed dopant-dependence of the rate of crystallisation. It has been found that moderate concentrations of dopants enhance the SPE crystallisation rate while the presence of equal concentrations of an n-type and a p-type dopant (impurity compensation) returns the SPE rate to the intrinsic value. This provides crucial evidence that the SPE mechanism is sensitive to the position of the Fermi level in the bandgap of the crystalline and/or the amorphous silicon phases and may lead to identification of an energy level within the bandgap that can be associated with the defect. This paper gives details of SPE

  5. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+

    International Nuclear Information System (INIS)

    Tsai, M.Y.; Streetman, B.G.

    1979-01-01

    Electrical properties of recrystallized amorphous silicon layers, formed by BF + 2 implants or Si + +B + implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 0 C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF + 2 . Only in a thicker amorphous layer, formed for example by Si + predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported

  6. Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

    International Nuclear Information System (INIS)

    Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

    2014-01-01

    We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

  7. The chemical composition and band gap of amorphous Si:C:N:H layers

    Energy Technology Data Exchange (ETDEWEB)

    Swatowska, Barbara, E-mail: swatow@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Kluska, Stanislawa; Jurzecka-Szymacha, Maria [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Stapinski, Tomasz [AGH University of Science and Technology, Department of Electronics, Mickiewicza Av. 30, 30-059 Krakow (Poland); Tkacz-Smiech, Katarzyna [AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Mickiewicza Av. 30, 30-059 Krakow (Poland)

    2016-05-15

    Highlights: • Six type of amorphous hydrogenated films were obtained and analysed. • Investigated chemical bondings strongly influenced energy gap values. • Analysed layers could be applied as semiconductors and also as dielectrics. - Abstract: In this work we presented the correlation between the chemical composition of amorphous Si:C:N:H layers of various content of silicon, carbon and nitrogen, and their band gap. The series of amorphous Si:C:N:H layers were obtained by plasma assisted chemical vapour deposition method in which plasma was generated by RF (13.56 MHz, 300 W) and MW (2.45 GHz, 2 kW) onto monocrystalline silicon Si(001) and borosilicate glass. Structural studies were based on FTIR transmission spectrum registered within wavenumbers 400–4000 cm{sup −1}. The presence of Si−C, Si−N, C−N, C=N, C=C, C≡N, Si−H and C−H bonds was shown. The values band gap of the layers have been determined from spectrophotometric and ellipsometric measurements. The respective values are contained in the range between 1.64 eV – characteristic for typical semiconductor and 4.21 eV – for good dielectric, depending on the chemical composition and atomic structure of the layers.

  8. Amorphous silicon based radiation detectors

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

    1991-07-01

    We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

  9. Magnetic properties of amorphous Tb-Fe thin films with an artificially layered structure

    International Nuclear Information System (INIS)

    Sato, N.

    1986-01-01

    An alternating terbium-iron (Tb-Fe) multilayer structure artificially made in amorphous Tb-Fe thin films gives rise to excellent magnetic properties of large perpendicular uniaxial anisotropy, large saturation magnetization, and large coercivity over a wide range of Tb composition in the films. The films are superior to amorphous Tb-Fe alloy thin films, especially when they are piled up with a monatomic layer of Tb and several atomic layers of Fe in an alternating fashion. Small-angle x-ray diffraction analysis confirmed the layering of monatomic layers of Tb and Fe, where the periodicity of the layers was found to be about 5.9 A. Direct evidence for an artificially layered structure was obtained by transmission electron microscopic and Auger electron spectroscopic observations. Together with magnetic measurements of hysteresis loops and torque curves, it has been concluded that the most important origin of the large magnetic uniaxial anisotropy can be attributed to the Tb-Fe pairs aligned perpendicular to the films

  10. Organic photovoltaic effects depending on CuPc layer thickness

    International Nuclear Information System (INIS)

    Hur, Sung Woo; Kim, Tae Wan; Chung, Dong Hoe; Oh, Hyun Seok; Kim, Chung Hyeok; Lee, Joon Ung; Park, Jong Wook

    2004-01-01

    Organic photovoltaic effects were studied in device structures of ITO/CuPc/Al and ITO/CuPc/C 60 /BCP/Al by varying the CuPc layer thickness. Since the exciton diffusion length is relatively short in organic semiconductors, a study on the thickness-dependent photovoltaic effects is important. The thickness of the CuPc layer was varied from 10 nm to 50 nm. We found that the optimum CuPc layer thickness was around 40 nm from the analysis of the current density-voltage characteristics in an ITO/CuPc/Al photovoltaic cell. The efficiency of the device shows that the multi-layered heterojunction structure is more appropriate for photovoltaic cells.

  11. Effect of separated layer thickness on magnetoresistance and magnetic properties of Co/Dy/Co and Ni/Dy/Ni film systems

    Science.gov (United States)

    Shabelnyk, T. M.; Shutylieva, O. V.; Vorobiov, S. I.; Pazukha, I. M.; Chornous, A. M.

    2018-01-01

    Co(5 nm)/Dy(tDy)/Co(20 nm)/S and Ni(5 nm)/Dy(tDy)/Ni(20 nm)/S trilayer films are prepared by electron-beam sputtering to investigate the influence of dysprosium layer thickness (tDy) and thermal annealing on the crystal structure, magnetoresistance (MR) and magnetic properties of thin films. The thickness of Dy layer changed in the range from 1 nm to 20 nm. The samples annealed for 20 min at 700 K. Electron diffraction patterns reveal that the as-deposited and annealed systems Co/Dy/Co and Ni/Dy/Ni had fcc-Co + hcp-Dy and fcc-Ni + hcp-Dy phase state, respectively. It is also shown that at the tDy = 15 nm the transition from amorphous to crystalline structures of Dy layer is observed. An increase in the Dy layer thickness results in changes in the MR and magnetic properties of the trilayer systems. It is shown that MR is most thermally stable against annealing to 700 K at tDy = 15 nm for Co/Dy/Co as well as for Ni/Dy/Ni. For tDy = 15 nm the, value of MR for both system increases by two times compared to those of pure ferromagnetic (FM) samples. The coercivity (Bc), remanent (Mr) and saturation (Ms) magnetization of the in-plain magnetization hysteresis loops are related to the Dy layer thickness too. The coercivity depends on the FM materials type and diffusion processes at the layer boundary. Accordingly, Mr and Ms are reduced with tDy increasing before and after annealing for both trilayer systems.

  12. Amorphous-like interfacial layer between a high-Tc superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    International Nuclear Information System (INIS)

    Kim, Bongjun; Kim, Hyuntak; Nagai, Takuro; Matsui, Yoshio; Horiuchi, Shigeo; Jeong, Daeyeong; Deinhofer, Christian; Gritzner, Gerhard; Kim, Youngmin; Kim, Younjoong

    2006-01-01

    The thin amorphous-like layer, formed at the interface between a high-T c superconducting (Tl 0.5 , Pb 0.5 )(Sr 0.8 , Ba 0.2 )Ca 2 Cu 3 O y (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO 2 + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  13. Graphene as a transparent electrode for amorphous silicon-based solar cells

    International Nuclear Information System (INIS)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-01-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles

  14. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Science.gov (United States)

    Vaianella, F.; Rosolen, G.; Maes, B.

    2015-06-01

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  15. Graphene as a transparent electrode for amorphous silicon-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Vaianella, F., E-mail: Fabio.Vaianella@umons.ac.be; Rosolen, G.; Maes, B. [Micro- and Nanophotonic Materials Group, Faculty of Science, University of Mons, 20 place du Parc, B-7000 Mons (Belgium)

    2015-06-28

    The properties of graphene in terms of transparency and conductivity make it an ideal candidate to replace indium tin oxide (ITO) in a transparent conducting electrode. However, graphene is not always as good as ITO for some applications, due to a non-negligible absorption. For amorphous silicon photovoltaics, we have identified a useful case with a graphene-silica front electrode that improves upon ITO. For both electrode technologies, we simulate the weighted absorption in the active layer of planar amorphous silicon-based solar cells with a silver back-reflector. The graphene device shows a significantly increased absorbance compared to ITO-based cells for a large range of silicon thicknesses (34.4% versus 30.9% for a 300 nm thick silicon layer), and this result persists over a wide range of incidence angles.

  16. Development of Amorphous Filler Alloys for the Joining of Nuclear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jai Young; Kim, Dong Myong; Kang, Yoon Sun; Jung, Jae Han; Yu, Ji Sang; Kim, Hae Yeol; Lee, Ho [Korea Advanced Institute of Science and Technology, Taejon (Korea, Republic of)

    1997-08-01

    In the case of advanced CANDU fuel being useful in future, the fabrication processes for soundness insurance of a improved nuclear fuel bundle must be developed at the same time because it have three times combustibility as existing fuel. In particular, as the improved nuclear fuel bundle in which a coated layer thickness is thinner than existing that, firmity of a joint part is very important. Therefore, we need to develop a joint technique using new solder which can settle a potential problem in current joining method. As the Zr-Be alloy system is composed with the elements having high neutron permeability, they are suitable for joint of nuclear fuel pack. The various compositions Zr-Be binary metallic glass alloys were applicable to the joining the nuclear fuel bundles. The thickness of joint layer using the Zr{sub 1}-{sub x}Be{sub x} amorphous ribbon as a solder is thinner than that using physical vapor deposited Be. Among the Zr{sub 1}-{sub x}Be{sub x} amorphous binary alloys, Zr{sub 0}.7Be-0.3 binary alloy is the most appropriate for joint of nuclear fuel bundle because its joint layer is smooth and thin due to low degree of Be diffusion. In the case of the Zr{sub (}0.7-y)Ti{sub y}Be{sub 0}.3 and Zr{sub (}0.7-y)Nb{sub y}Be{sub 0}3 ternary amorphous alloys, the crystallization temperature(T{sub x}) and activation energy(E{sub x}) increase as the contents of Nb and Ti increase respectively. In the aspect of thermal stability, the ternary amorphous alloys are superior than Zr-Be binary amorphous alloys and Zr-Ti-Be amorphous alloy is superior than Zr-Nb-Be amorphous alloy. 12 refs., 5 tabs., 25 figs. (author)

  17. Determination of accurate metal silicide layer thickness by RBS

    International Nuclear Information System (INIS)

    Kirchhoff, J.F.; Baumann, S.M.; Evans, C.; Ward, I.; Coveney, P.

    1995-01-01

    Rutherford Backscattering Spectrometry (RBS) is a proven useful analytical tool for determining compositional information of a wide variety of materials. One of the most widely utilized applications of RBS is the study of the composition of metal silicides (MSi x ), also referred to as polycides. A key quantity obtained from an analysis of a metal silicide is the ratio of silicon to metal (Si/M). Although compositional information is very reliable in these applications, determination of metal silicide layer thickness by RBS techniques can differ from true layer thicknesses by more than 40%. The cause of these differences lies in how the densities utilized in the RBS analysis are calculated. The standard RBS analysis software packages calculate layer densities by assuming each element's bulk densities weighted by the fractional atomic presence. This calculation causes large thickness discrepancies in metal silicide thicknesses because most films form into crystal structures with distinct densities. Assuming a constant layer density for a full spectrum of Si/M values for metal silicide samples improves layer thickness determination but ignores the underlying physics of the films. We will present results of RBS determination of the thickness various metal silicide films with a range of Si/M values using a physically accurate model for the calculation of layer densities. The thicknesses are compared to scanning electron microscopy (SEM) cross-section micrographs. We have also developed supporting software that incorporates these calculations into routine analyses. (orig.)

  18. Influences of carbon content and coating carbon thickness on properties of amorphous CoSnO3@C composites as anode materials for lithium-ion batteries

    International Nuclear Information System (INIS)

    Fan, Fuqiang; Fang, Guoqing; Zhang, Ruixue; Xu, Yanhui; Zheng, Junwei; Li, Decheng

    2014-01-01

    Highlights: • The thickness of carbon coating layers can be successfully controlled through varying molar concentration of aqueous glucose solution. • Coating carbon thickness and carbon content are two important factors on the electrochemical performances of CoSnO3@C. • CoSnO 3 @C under optimized conditions exhibits the optimal balance between the volume buffering effect and reversible capacity. • As-prepared CoSnO 3 @C under optimized conditions shows excellent electrochemical performances, whose reversible capacity could reach 491 mA h g −1 after 100 cycles. - Abstract: A series of core–shell carbon coated amorphous CoSnO 3 (CoSnO 3 @C) with different carbon content are synthesized. Effects of carbon content and coating carbon thickness on the physical and electrochemical performances of the samples were studied in detail. The samples were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermal gravimetric analysis (TGA), galvanostatic charge–discharge and AC impedance spectroscopy, respectively. The results indicate that controlling the concentration of aqueous glucose solution influences the generation of in-situ carbon layer thickness. The optimal concentration of aqueous glucose solution, carbon content and carbon layer thickness are suggested as 0.25 M, 35.1% and 20 nm, respectively. CoSnO 3 @C composite prepared under the optimal conditions exhibits excellent cycling performance, whose reversible capacity could reach 491 mA h g −1 after 100 cycles

  19. The effect of the gas factor on selecting the thickness of a layer during two-layer getting of thick seams. [USSR

    Energy Technology Data Exchange (ETDEWEB)

    Varekha, Zh P; Kurkin, A S; Vechera, V N

    1979-01-01

    For technico-economic verification of the selection of the efficient removed thickness of upper and lower layers under conditions of high gas abundance of seams, the KNIUI has developed an economic model of converted costs within a getting field, allowing for natural and technical factors. The calculation considers specific costs for stoping work when getting the upper and lower layers, digging and maintenance of development workings, coal transport, assembly-disassembly work, ventilation, labor costs, degassing, etc. The calculation dependences and nomogram obtained enable comparatively easy definition of efficient thicknesses of removed layers when designing stoping work at thick, gently sloping seams, as well as calculation converted costs using as the initial data the total thickness of the seam, its natural gas content, and the expected degree of preliminary degassing.

  20. Mechanical properties of amorphous and polycrystalline multilayer systems

    International Nuclear Information System (INIS)

    Barzen, I.; Edinger, M.; Scherer, J.; Ulrich, S.; Jung, K.; Ehrhardt, H.

    1993-01-01

    Amorphous and polycrystalline multilayer structures containing materials with metallic (Cr, Cr 3 C 2 ), ionic (Al 2 O 3 ) and covalent (SiC) bonding have been prepared by magnetron sputtering and ion plating in a dual-source apparatus. Up to 1000 layers have been deposited with a constant total thickness of 2.3 μm. Below a single-layer thickness of 10-30 nm the mechanical properties stress and hardness show strong variations. On one hand it is possible that below a certain thickness the mechanical properties of a single layer change. On the other hand electrical resistance and electron spin density measurements indicate that electronic effects may be involved. An attempt is made to explain the observed correlations by transport mechanisms of the electrons, by saturation of dangling bonds with delocalized electrons and by changes in the electronic band structure. (orig.)

  1. Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

    Energy Technology Data Exchange (ETDEWEB)

    Kim, No Hyu; Lee, Sang Soon [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2003-12-15

    This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process

  2. Ultrasonic Measurement of Interfacial Layer Thickness of Sub-Quarter-Wavelength

    International Nuclear Information System (INIS)

    Kim, No Hyu; Lee, Sang Soon

    2003-01-01

    This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process

  3. Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

    Science.gov (United States)

    Kim, Young-Soon; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

    2015-01-01

    Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y2O3 dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm2 area. After Y2O3 deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO3 (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y2O3 and GdBCO/LMO/MgO/Y2O3 stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y2O3 multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

  4. Experimental study on effects of inlet boundary layer thickness and boundary layer fence in a turbine cascade

    International Nuclear Information System (INIS)

    Jun, Y. M.; Chung, J. T.

    2000-01-01

    The working fluid from the combustor to the turbine stage of a gas turbine makes various boundary layer thickness. Since the inlet boundary layer thickness is one of the important factors that affect the turbine efficiency, It is necessary to investigate secondary flow and loss with various boundary layer thickness conditions. In the present study, the effect of various inlet boundary layer thickness on secondary flow and loss and the proper height of the boundary layer fences for various boundary layer thickness were investigated. Measurements of secondary flow velocity and total pressure loss within and downstream of the passage were taken under 5 boundary layer thickness conditions, 16, 36, 52, 69, 110mm. It was found that total pressure loss and secondary flow areas were increased with increase of thickness but they were maintained almost at the same position. At the following research about the boundary layer fences, 1/6, 1/3, 1/2 of each inlet boundary layer thickness and 12mm were used as the fence heights. As a result, it was observed that the proper height of the fences was generally constant since the passage vortex remained almost at the same position. Therefore once the geometry of a cascade is decided, the location of the passage vortex and the proper fence height are appeared to be determined at the same time. When the inlet boundary layer thickness is relatively small, the loss caused by the proper fence becomes bigger than end wall loss so that it dominates secondary loss. In these cases the proper fence height is decided not by the cascade geometry but by the inlet boundary layer thickness as previous investigations

  5. Development of examination technique for oxide layer thickness measurement of irradiated fuel rods

    International Nuclear Information System (INIS)

    Koo, D. S.; Park, S. W.; Kim, J. H.; Seo, H. S.; Min, D. K.; Kim, E. K.; Chun, Y. B.; Bang, K. S.

    1999-06-01

    Technique for oxide layer thickness measurement of irradiated fuel rods was developed to measure oxide layer thickness and study characteristic of fuel rods. Oxide layer thickness of irradiated fuels were measured, analyzed. Outer oxide layer thickness of 3 cycle-irradiated fuel rods were 20 - 30 μm, inner oxide layer thickness 0 - 10 μm and inner oxide layer thickness on cracked cladding about 30 μm. Oxide layer thickness of 4 cycle-irradiated fuel rods were about 2 times as thick as those of 1 cycle-irradiated fuel rods. Oxide layer on lower region of irradiated fuel rods was thin and oxide layer from lower region to upper region indicated gradual increase in thickness. Oxide layer thickness from 2500 to 3000 mm showed maximum and oxide layer thickness from 3000 to top region of irradiated fuel rods showed decreasing trend. Inner oxide layer thicknesses of 4 cycle-irradiated fuel rod were about 8 μm at 750 - 3500 mm from the bottom end of fuel rod. Outer oxide layer thickness were about 8 μm at 750 - 1000 mm from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel rod. These indicated gradual increase up to upper region from the bottom end of fuel. Oxide layer thickness technique will apply safety evaluation and study of reactor fuels. (author). 6 refs., 14 figs

  6. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  7. Influences of carbon content and coating carbon thickness on properties of amorphous CoSnO{sub 3}@C composites as anode materials for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Fuqiang [Key Laboratory of Lithium Battery Materials of Jiangsu Province, Institute of chemical power sources, Soochow University, Suzhou 215006 (China); Fang, Guoqing [Key Laboratory of Lithium Battery Materials of Jiangsu Province, Institute of chemical power sources, Soochow University, Suzhou 215006 (China); Changzhou Institute of Energy Storage Materials and Devices, Changzhou 213000 (China); Zhang, Ruixue [Key Laboratory of Lithium Battery Materials of Jiangsu Province, Institute of chemical power sources, Soochow University, Suzhou 215006 (China); Xu, Yanhui; Zheng, Junwei [Key Laboratory of Lithium Battery Materials of Jiangsu Province, Institute of chemical power sources, Soochow University, Suzhou 215006 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006 (China); Li, Decheng, E-mail: lidecheng@suda.edu.cn [Key Laboratory of Lithium Battery Materials of Jiangsu Province, Institute of chemical power sources, Soochow University, Suzhou 215006 (China); College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006 (China)

    2014-08-30

    Highlights: • The thickness of carbon coating layers can be successfully controlled through varying molar concentration of aqueous glucose solution. • Coating carbon thickness and carbon content are two important factors on the electrochemical performances of CoSnO3@C. • CoSnO{sub 3}@C under optimized conditions exhibits the optimal balance between the volume buffering effect and reversible capacity. • As-prepared CoSnO{sub 3}@C under optimized conditions shows excellent electrochemical performances, whose reversible capacity could reach 491 mA h g{sup −1} after 100 cycles. - Abstract: A series of core–shell carbon coated amorphous CoSnO{sub 3} (CoSnO{sub 3}@C) with different carbon content are synthesized. Effects of carbon content and coating carbon thickness on the physical and electrochemical performances of the samples were studied in detail. The samples were analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM), thermal gravimetric analysis (TGA), galvanostatic charge–discharge and AC impedance spectroscopy, respectively. The results indicate that controlling the concentration of aqueous glucose solution influences the generation of in-situ carbon layer thickness. The optimal concentration of aqueous glucose solution, carbon content and carbon layer thickness are suggested as 0.25 M, 35.1% and 20 nm, respectively. CoSnO{sub 3}@C composite prepared under the optimal conditions exhibits excellent cycling performance, whose reversible capacity could reach 491 mA h g{sup −1} after 100 cycles.

  8. Amorphous-like interfacial layer between a high-T{sub c} superconducting Tl-1223 film and a Ag substrate examined by high-voltage high-resolution transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Kim, Hyuntak [Electronics and Tele-Communications Research Institute, Daejeon (Korea, Republic of); Nagai, Takuro; Matsui, Yoshio [National Institute for Materials Science, Tsukuba, Ibaraki (Japan); Horiuchi, Shigeo; Jeong, Daeyeong [Electrotechnology Research Institute, Changwon (Korea, Republic of); Deinhofer, Christian; Gritzner, Gerhard [Johannes Kepler University, Linz (Austria); Kim, Youngmin; Kim, Younjoong [Electron Microscopy Team, Korea Basic Science Institute, Daejeon (Korea, Republic of)

    2006-05-15

    The thin amorphous-like layer, formed at the interface between a high-T{sub c} superconducting (Tl{sub 0.5}, Pb{sub 0.5})(Sr{sub 0.8}, Ba{sub 0.2})Ca{sub 2}Cu{sub 3}O{sub y} (Tl-1223) film and a Ag substrate during heating at 910 .deg. C, has been examined by using high-voltage high-resolution transmission electron microscopy. The interfacial layer is less than 10 nm in thickness. It contacts the (001) plane of Tl-1223 and the (113) or (133) planes of Ag in most cases. Its composition is similar to that of Tl-1223, except for the inclusion of a substantial amount of Ag. Its formation proceeds by diffusion of Ag into Tl-1223, during which a structure change first occurs at the layer of CuO{sub 2} + Ca planes. The Tl(Pb)O + the Sr(Ba)O layers are then destroyed to cause the total structure to become amorphous-like. Furthermore, we have found that it is formed under an irradiation of highly energetic electrons.

  9. Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer

    Science.gov (United States)

    Lin, Dong; Pi, Shubin; Yang, Jianwen; Tiwari, Nidhi; Ren, Jinhua; Zhang, Qun; Liu, Po-Tsun; Shieh, Han-Ping

    2018-06-01

    In this work, bottom-gate top-contact thin film transistors with double-stacked amorphous IWO/IWO:N channel layer were fabricated. Herein, amorphous IWO and N-doped IWO were deposited as front and back channel layers, respectively, by radio-frequency magnetron sputtering. The electrical characteristics of the bi-layer-channel thin film transistors (TFTs) were examined and compared with those of single-layer-channel (i.e., amorphous IWO or IWO:N) TFTs. It was demonstrated to exhibit a high mobility of 27.2 cm2 V‑1 s‑1 and an on/off current ratio of 107. Compared to the single peers, bi-layer a-IWO/IWO:N TFTs showed smaller hysteresis and higher stability under negative bias stress and negative bias temperature stress. The enhanced performance could be attributed to its unique double-stacked channel configuration, which successfully combined the merits of the TFTs with IWO and IWO:N channels. The underlying IWO thin film provided percolation paths for electron transport, meanwhile, the top IWO:N layer reduced the bulk trap densities. In addition, the IWO channel/gate insulator interface had reduced defects, and IWO:N back channel surface was insensitive to the ambient atmosphere. Overall, the proposed bi-layer a-IWO/IWO:N TFTs show potential for practical applications due to its possibly long-term serviceability.

  10. Effect of layer thickness on the thermal release from Be-D co-deposited layers

    Science.gov (United States)

    Baldwin, M. J.; Doerner, R. P.

    2014-08-01

    The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967-70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D2 release from co-deposited Be-(0.05)D layers produced at ˜323 K. Bake desorption of layers of thickness 0.2-0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be-D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction.

  11. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  12. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  13. The effect of capped layer thickness on switching behavior in perpendicular CoCrPt based coupled granular/continuous media

    International Nuclear Information System (INIS)

    Li, W.M.; Lim, W.K.; Shi, J.Z.; Ding, J.

    2013-01-01

    A systematic investigation of magnetic switching behavior of CoCrPt based capped media (perpendicularly coupled granular/continuous (CGC) media consisting of granular CoCrPt:SiO 2 TiO 2 Ta 2 O 5 /capped CoCrPt(B)) is performed by varying the thickness of the capped layer from 0 to 9 nm. The microscopic structures of CGC media with different thickness of capped layer are examined by transmission electron microscope. We find out that CoCrPt magnetic grains are separated by nonmagnetic oxide grain boundaries. Grain size and grain boundary are about 8.9 nm and 2 nm, respectively. The nonmagnetic oxide grain boundaries in the granular layer do not disappear immediately at the interface between the granular and capped layers. The amorphous grain boundary phase in the granular layer propagates to the top surface of the capped layer. After capping with the CoCrPt(B) layer, the grain size at the surface of CGC structure increases and the grain boundary decreases. Both coercivity and intergranular exchange coupling of the CGC media are investigated by Polar magneto-optic Kerr effect magnetometer and alternating gradient force magnetometer. Although H c apparently decreases at thicker capped layer, no obvious variation of macroscopic switching field distribution (SFD/H c ) is observed. We separate intrinsic switching field distribution from intergranular interactions. The investigation of reduced intrinsic SFD/H c and increased hysteresis loop slope at coercivity, suggests that improvement of absolute switching field distribution (SFD) is caused by both strong intergranular exchange coupling and uniform grain size. Micromagnetic simulation results further verify our conclusion that the capped layer in CGC media is not uniformly continuous but has some granular nature. However, grains in the CoCrPt(B) capped layer is not absolutely isolated, strong exchange coupling exists between grains. - Highlights: • In CGC media, CoCrPt magnetic grains are separated by nonmagnetic oxide

  14. Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers

    International Nuclear Information System (INIS)

    Peral, G.; Briones, F.; Vicent, J.L.

    1991-01-01

    Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated

  15. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    Energy Technology Data Exchange (ETDEWEB)

    Santi, L. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Bohn, F. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Viegas, A.D.C. [Departamento de Fisica, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS (Brazil); Durin, G. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Magni, A. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Bonin, R. [Istituto Elettrotecnico Nazionale Galileo Ferraris, Turin (Italy); Zapperi, S. [Istituto dei Sistemi Complessi-CNR, Roma (Italy); Sommer, R.L. [Centro Brasileiro de Pesquisas Fisicas, 22290-180, Rio de Janeiro, RJ (Brazil)]. E-mail: sommer@cbpf.br

    2006-10-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe{sub 73.5}Cu{sub 1}Nb{sub 3}Si{sub 22.5-x}B{sub x} (with x=4 and 9) in the thickness range 20nm-5{mu}m. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents {tau}=1.25+/-0.05 and {alpha}=1.60+/-0.05, respectively.

  16. Effect of layer thickness on the thermal release from Be–D co-deposited layers

    International Nuclear Information System (INIS)

    Baldwin, M.J.; Doerner, R.P.

    2014-01-01

    The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967–70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D 2 release from co-deposited Be–(0.05)D layers produced at ∼323 K. Bake desorption of layers of thickness 0.2–0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be–D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction. (paper)

  17. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

    1992-07-01

    We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

  18. Damage-free back channel wet-etch process in amorphous indium-zinc-oxide thin-film transistors using a carbon-nanofilm barrier layer.

    Science.gov (United States)

    Luo, Dongxiang; Zhao, Mingjie; Xu, Miao; Li, Min; Chen, Zikai; Wang, Lang; Zou, Jianhua; Tao, Hong; Wang, Lei; Peng, Junbiao

    2014-07-23

    Amorphous indium-zinc-oxide thin film transistors (IZO-TFTs) with damage-free back channel wet-etch (BCE) process were investigated. A carbon (C) nanofilm was inserted into the interface between IZO layer and source/drain (S/D) electrodes as a barrier layer. Transmittance electron microscope images revealed that the 3 nm-thick C nanofilm exhibited a good corrosion resistance to a commonly used H3PO4-based etchant and could be easily eliminated. The TFT device with a 3 nm-thick C barrier layer showed a saturated field effect mobility of 14.4 cm(2) V(-1) s(-1), a subthreshold swing of 0.21 V/decade, an on-to-off current ratio of 8.3 × 10(10), and a threshold voltage of 2.0 V. The favorable electrical performance of this kind of IZO-TFTs was due to the protection of the inserted C to IZO layer in the back-channel-etch process. Moreover, the low contact resistance of the devices was proved to be due to the graphitization of the C nanofilms after annealing. In addition, the hysteresis and thermal stress testing confirmed that the usage of C barrier nanofilms is an effective method to fabricate the damage-free BCE-type devices with high reliability.

  19. Tunneling measurements in amorphous layers of superconducting transition metals: molybdenum, vanadium, and niobium

    International Nuclear Information System (INIS)

    Roll, U.

    1981-01-01

    Tunneling experiments with amorphous Molybdenum and Vanadium layers are presented, showing no significant increase of the reduced energy gap 2δ(O)/kTsub(c)(δ) compared with the BCS-value, in contrast to all previous measurement on amorphous superconducting materials of simple s-p-metals, showing on enhanced electron-phonon-interaction. This fact may lead to the conclusion that the strong electron-phonon coupling is caused by the amorphous structure of the superconductor. The present results, however, indicate that the strong electron-phonon interaction cannot be explained only ba the amorphous structure of the superconductor. In the measurements of the second derivative d 2 U/dI 2 no phonon-induced structures have been observed for amorphous molybdenum, vanadium and niobium films. Apparently the phonon density of states F(#betta#) of amorphous transition metals has no structure, thus the longitudinal and transverse phonons cannot be identified in the measured (d 2 U/dI 2 )-curves. This particular behaviour of the amorphous transition metals in contrast to the simple s-p-metals may be interpreted by the strongly localized d-electrons. (orig./GG) [de

  20. Characterization of amorphous multilayered ZnO-SnO2 heterostructure thin films and their field effect electronic properties

    International Nuclear Information System (INIS)

    Lee, Su-Jae; Hwang, Chi-Sun; Pi, Jae-Eun; Yang, Jong-Heon; Oh, Himchan; Cho, Sung Haeng; Cho, Kyoung-Ik; Chu, Hye Yong

    2014-01-01

    Multilayered ZnO-SnO 2 heterostructure thin films were produced using pulsed laser ablation of pie-shaped ZnO-SnO 2 oxides target, and their structural and field effect electronic transport properties were investigated as a function of the thickness of the ZnO and SnO 2 layers. The films have an amorphous multilayered heterostructure composed of the periodic stacking of the ZnO and SnO 2 layers. The field effect electronic properties of amorphous multilayered ZnO-SnO 2 heterostructure thin film transistors (TFTs) are highly dependent on the thickness of the ZnO and SnO 2 layers. The highest electron mobility of 37 cm 2 /V s, a low subthreshold swing of a 0.19 V/decade, a threshold voltage of 0.13 V, and a high drain current on-to-off ratio of ∼10 10 obtained for the amorphous multilayered ZnO(1.5 nm)-SnO 2 (1.5 nm) heterostructure TFTs. These results are presumed to be due to the unique electronic structure of an amorphous multilayered ZnO-SnO 2 heterostructure film consisting of ZnO, SnO 2 , and ZnO-SnO 2 interface layers

  1. Contact problems of a rectangular block on an elastic layer of finite thickness: Part II: The thick layer

    NARCIS (Netherlands)

    Alblas, J.B.; Kuipers, M.

    1970-01-01

    We consider a layer of finite thickness loaded in plane strain by a stamp with a straight horizontal base, which is smooth and rigid. The stamp is pressed vertically into the layer and is slightly rotated by an external moment load subsequently. Two cases are considered successively: the lower side

  2. Redistribution of erbium during the crystallization of buried amorphous silicon layers

    International Nuclear Information System (INIS)

    Aleksandrov, O.V.; Nikolaev, Yu.A.; Sobolev, N.A.; Sakharov, V.I.; Serenkov, I.T.; Kudryavtsev, Yu.A.

    1999-01-01

    The redistribution of Er during its implantation in silicon at doses close to the amorphization threshold and its subsequent solid-phase epitaxial (SPE) crystallization is investigated. The formation of a buried amorphous (a) layer is discovered at Er doses equal to 5x10 13 and 1x10 14 cm -2 using Rutherford backscattering. The segregation of Er in this case takes place inwardly from the two directions corresponding to the upper and lower boundaries of the buried αlayer and leads to the formation of a concentration peak at the meeting place of the two crystallization fronts. A method for calculating the coordinate dependence of the segregation coefficient k from the distribution profiles of the erbium impurity before and after annealing is proposed. The k(x) curve exhibits a drop, whose width increases with decreasing Er implantation dose. Its appearance is attributed to the nonequilibrium nature of the segregation process at the beginning of SPE crystallization

  3. Effect of boundary layer thickness on the flow characteristics around a rectangular prism

    International Nuclear Information System (INIS)

    Ji, Ho Seong; Kim, Kyung Chun

    2001-01-01

    Effect of boundary layer thickness on the flow characteristics around a rectangular prism has been investigated by using a PIV(Particle Image Velocimetry) technique. Three different boundary layers (thick, medium and thin) were generated in the atmospheric boundary layer wind tunnel at Pusan National University. The thick boundary layer having 670mm thickness was generated by using spires and roughness elements. The medium thickness of boundary layer(δ=270mm) was the natural turbulent boundary layer at the test section with fully long developing length(18m). The thin boundary layer with 36.5mm thickness was generated by on a smooth panel elevated 70cm from the wind tunnel floor. The Reynolds number based on the free stream velocity and the height of the model was 7.9X10 3 . The mean velocity vector fields and turbulent kinetic energy distribution were measured and compared. The effect of boundary layer thickness is clearly observed not only in the length of separation bubble but also in the reattachment points. The thinner boundary layer thickness, the higher turbulent kinetic energy peak around the model roof. It is strongly recommended that the height ratio between model and approaching boundary layer thickness should be a major parameter

  4. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  5. Study of buffer layer thickness on bulk heterojunction solar cell.

    Science.gov (United States)

    Noh, Seunguk; Suman, C K; Lee, Donggu; Kim, Seohee; Lee, Changhee

    2010-10-01

    We studied the effect of the buffer layer (molybdenum-oxide (MoO3)) thickness on the performance of organic solar cell based on blends of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester fullerene derivative (PCBM). The thickness of MoO3 was varied from 1 nm to 30 nm for optimization of device performance. The photocurrent-voltage and impedance spectroscopy were measured under dark and AM1.5G solar simulated illumination of 100 mW/cm2 for exploring the role of the buffer layer thickness on carrier collection at an anode. The MoO3 thickness of the optimized device (efficiency approximately 3.7%) was found to be in the range of 5 approximately 10 nm. The short-circuit current and the shunt resistance decrease gradually for thicker MoO3 layer over 5 nm. The device can be modeled as the combination of three RC parallel circuits (each one for the active layer, buffer layer and interface between the buffer layer and the active layer) in series with contact resistance (Rs approximately 60 ohm).

  6. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    International Nuclear Information System (INIS)

    Munoz, D.; Voz, C.; Blanque, S.; Ibarz, D.; Bertomeu, J.; Alcubilla, R.

    2009-01-01

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρ c ∼ 10 mΩ cm 2 ) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  7. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

    2016-05-15

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  8. The bonding of protective films of amorphic diamond to titanium

    Science.gov (United States)

    Collins, C. B.; Davanloo, F.; Lee, T. J.; Jander, D. R.; You, J. H.; Park, H.; Pivin, J. C.

    1992-04-01

    Films of amorphic diamond can be deposited from laser plasma ions without the use of catalysts such as hydrogen or fluorine. Prepared without columnar patterns of growth, the layers of this material have been reported to have ``bulk'' values of mechanical properties that have suggested their usage as protective coatings for metals. Described here is a study of the bonding and properties realized in one such example, the deposition of amorphic diamond on titanium. Measurements with Rutherford backscattering spectrometry and transmission electron microscopy showed that the diamond coatings deposited from laser plasmas were chemically bonded to Ti substrates in 100-200-Å-thick interfacial layers containing some crystalline precipitates of TiC. Resistance to wear was estimated with a modified sand blaster and in all cases the coating was worn away without any rupture or deterioration of the bonding layer. Such wear was greatly reduced and lifetimes of the coated samples were increased by a factor of better than 300 with only 2.7 μm of amorphic diamond.

  9. Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

    International Nuclear Information System (INIS)

    Wilczynski, M.

    2011-01-01

    Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

  10. Amorphous silicon oxide layers for surface passivation and contacting of heterostructure solar cells of amorphous and crystalline silicon; Amorphe Siliziumoxidschichten zur Oberflaechenpassivierung und Kontaktierung von Heterostruktur-Solarzellen aus amorphen und kristallinem Silizium

    Energy Technology Data Exchange (ETDEWEB)

    Einsele, Florian

    2010-02-05

    Atomic hydrogen plays a dominant role in the passivation of crystalline silicon surfaces by layers of amorphous silicon. In order to research into this role, this thesis presents the method of hydrogen effusion from thin amorphous films of silicon (a-Si:H) and silicon oxide (a-SiO{sub x}:H). The oxygen concentration of the sub-stoichiometric a-SiO{sub x}:H films ranges up to 10 at.-%. The effusion experiment yields information about the content and thermal stability of hydrogen and about the microstructure of the films. A mathematical description of the diffusion process of atomic hydrogen yields an analytical expression of the effusion rate R{sub E} depending on the linearly increasing temperature in the experiment. Fitting of the calculated effusion rates R{sub E} to measured effusion spectra yields the diffusion coefficient of atomic hydrogen in a-SiO{sub x}:H. With increasing oxygen concentration, the diffusion coefficient of hydrogen in the a-SiO{sub x}:H films decreases. This is attributed to an increasing Si-H bond energy due to back bonded oxygen, resulting in a higher stability of hydrogen in the films. This result is confirmed by an increasing thermal stability of the p-type c-Si passivation with a-SiO{sub x}:H of increasing oxygen concentrations up to 5 at.-%. The passivation reaches very low recombination velocities of S < 10 cm/s at the interface. However, for higher oxygen concentrations up to 10 at.-%, the passivation quality decreases significantly. Here, infrared spectroscopy of Si-H vibrational modes and hydrogen effusion show an increase of hydrogen-rich interconnected voids in the films. This microstructure results in a high amount of molecular hydrogen (H{sub 2}) in the layers, which is not suitable for the saturation of c-Si interface defects. Annealing of the films at temperatures around 400 C leads to a release of H{sub 2} from the voids, as a result of which Si-Si bonds in the material reconstruct. Subsequently, hydrogen migration in the

  11. Development of an SU-8 MEMS process with two metal electrodes using amorphous silicon as a sacrificial material

    KAUST Repository

    Ramadan, Khaled S.

    2013-02-08

    This work presents an SU-8 surface micromachining process using amorphous silicon as a sacrificial material, which also incorporates two metal layers for electrical excitation. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic applications due to its mechanical properties, biocompatibility and low cost. Amorphous silicon is used as a sacrificial layer in MEMS applications because it can be deposited in large thicknesses, and can be released in a dry method using XeF2, which alleviates release-based stiction problems related to MEMS applications. In this work, an SU-8 MEMS process was developed using ;-Si as a sacrificial layer. Two conductive metal electrodes were integrated in this process to allow out-of-plane electrostatic actuation for applications like MEMS switches and variable capacitors. In order to facilitate more flexibility for MEMS designers, the process can fabricate dimples that can be conductive or nonconductive. Additionally, this SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were optimized for two sets of thicknesses: thin (5-10 m) and thick (130 m). The process was tested fabricating MEMS switches, capacitors and thermal actuators. © 2013 IOP Publishing Ltd.

  12. TU-F-18C-02: Increasing Amorphous Selenium Thickness in Direct Conversion Flat-Panel Imagers for Contrast-Enhanced Dual-Energy Breast Imaging

    International Nuclear Information System (INIS)

    Scaduto, DA; Hu, Y-H; Zhao, W

    2014-01-01

    Purpose: Contrast-enhanced (CE) breast imaging using iodinated contrast agents requires imaging with x-ray spectra at energies greater than those used in mammography. Optimizing amorphous selenium (a-Se) flat panel imagers (FPI) for this higher energy range may increase lesion conspicuity. Methods: We compare imaging performance of a conventional FPI with 200 μm a-Se conversion layer to a prototype FPI with 300 μm a-Se layer. Both detectors are evaluated in a Siemens MAMMOMAT Inspiration prototype digital breast tomosynthesis (DBT) system using low-energy (W/Rh 28 kVp) and high-energy (W/Cu 49 kVp) x-ray spectra. Detectability of iodinated lesions in dual-energy images is evaluated using an iodine contrast phantom. Effects of beam obliquity are investigated in projection and reconstructed images using different reconstruction methods. The ideal observer signal-to-noise ratio is used as a figure-of-merit to predict the optimal a-Se thickness for CE lesion detectability without compromising conventional full-field digital mammography (FFDM) and DBT performance. Results: Increasing a-Se thickness from 200 μm to 300 μm preserves imaging performance at typical mammographic energies (e.g. W/Rh 28 kVp), and improves the detective quantum efficiency (DQE) for high energy (W/Cu 49 kVp) by 30%. While the more penetrating high-energy x-ray photons increase geometric blur due to beam obliquity in the FPI with thicker a-Se layer, the effect on lesion detectability in FBP reconstructions is negligible due to the reconstruction filters employed. Ideal observer SNR for CE objects shows improvements in in-plane detectability with increasing a-Se thicknesses, though small lesion detectability begins to degrade in oblique projections for a-Se thickness above 500 μm. Conclusion: Increasing a-Se thickness in direct conversion FPI from 200 μm to 300 μm improves lesion detectability in CE breast imaging with virtually no cost to conventional FFDM and DBT. This work was partially

  13. Effect of layer thickness on the properties of nickel thermal sprayed steel

    Energy Technology Data Exchange (ETDEWEB)

    Nurisna, Zuhri, E-mail: zuhri-nurisna@yahoo.co.id; Triyono,, E-mail: triyonomesin@uns.ac.id; Muhayat, Nurul, E-mail: nurulmuhayat@staff.uns.ac.id; Wijayanta, Agung Tri, E-mail: agungtw@uns.ac.id [Department of Mechanical Engineering, Sebelas Maret University, Jl. Jr. Sutami 36 A, Surakarta (Indonesia)

    2016-03-29

    Thermal arc spray nickel coating is widely used for decorative and functional applications, by improving corrosion resistance, wear resistance, heat resistence or by modifying other properties of the coated materials. There are several properties have been studied. Layer thickness of nickel thermal sprayed steel may be make harder the substrate surface. In this study, the effect of layer thickness of nickel thermal sprayed steel has been investigated. The rectangular substrate specimens were coated by Ni–5 wt.% Al using wire arc spray method. The thickness of coating layers were in range from 0.4 to 1.0 mm. Different thickness of coating layers were conducted to investigate their effect on hardness and morphology. The coating layer was examined by using microvickers and scanning electron microscope with EDX attachment. Generally, the hardness at the interface increased with increasing thickness of coating layers for all specimens due to higher heat input during spraying process. Morphology analysis result that during spraying process aluminum would react with surrounding oxygen and form aluminum oxide at outer surface of splat. Moreover, porosity was formed in coating layers. However, presence porosity is not related to thickness of coating material. The thicker coating layer resulted highesr of hardness and bond strength.

  14. Amorphous silicon as high index photonic material

    Science.gov (United States)

    Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

    2009-05-01

    Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

  15. The transition from amorphous to crystalline in Al/Zr multilayers

    International Nuclear Information System (INIS)

    Zhong Qi; Zhang Zhong; Ma Shuang; Qi Runze; Li Jia; Wang Zhanshan; Le Guen, Karine; André, Jean-Michel; Jonnard, Philippe

    2013-01-01

    The amorphous-to-crystalline transition in Al(1.0%wtSi)/Zr and Al(Pure)/Zr multilayers grown by direct-current magnetron sputtering system has been characterized over a range of Al layer thicknesses (1.0–5.0 nm) by using a series of complementary measurements including grazing incidence X-ray reflectometry, atomic force microscopy, X–ray diffraction, and high-resolution transmission electron microscopy. The Al layer thickness transition exhibits the Si doped in Al could not only disfavor the crystallization of Al but also influence the changing trends of surface roughness and diffraction peak position of phase Al . An interesting feature of the presence of Si in Al layer is that Si could influence the transition process in Al(1%wtSi) layer, in which the critical thickness (1.6 nm) of Al(Pure) layer in Al(Pure)/Zr shifts to 1.8 nm of Al(1.0%wtSi) layer in Al(1.0%wtSi)/Zr multilayer. We also found that the Zr-on-Al interlayer is wider than the Al-on-Zr interlayer in both systems, and the Al layers do not have specific crystal orientation in the directions vertical to the layer from selected area electron diffraction patterns below the thickness (3.0 nm) of Al layers. Above the thickness (3.0 nm) of Al layers, the Al layers are highly oriented in Al , so that the transformation from asymmetrical to symmetrical interlayers can be observed. Based on the analysis of all measurements, we build up a model with four steps, which could explain the Al layer thickness transition process in terms of a critical thickness for the nucleation of Al(Pure) and Al(1%wtSi) crystallites.

  16. Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

    International Nuclear Information System (INIS)

    Yim, H.I.; Lee, S.Y.; Hwang, J.Y.; Rhee, J.R.; Chun, B.S.; Wang, K.L.; Kim, Y.K.; Kim, T.W.; Lee, S.S.; Hwang, D.G.

    2008-01-01

    Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x /free layer 10/AlO x /CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  18. Control of Alq3 wetting layer thickness via substrate surface functionalization.

    Science.gov (United States)

    Tsoi, Shufen; Szeto, Bryan; Fleischauer, Michael D; Veinot, Jonathan G C; Brett, Michael J

    2007-06-05

    The effects of substrate surface energy and vapor deposition rate on the initial growth of porous columnar tris(8-hydroxyquinoline)aluminum (Alq3) nanostructures were investigated. Alq3 nanostructures thermally evaporated onto as-supplied Si substrates bearing an oxide were observed to form a solid wetting layer, likely caused by an interfacial energy mismatch between the substrate and Alq3. Wetting layer thickness control is important for potential optoelectronic applications. A dramatic decrease in wetting layer thickness was achieved by depositing Alq3 onto alkyltrichlorosilane-derivatized Si/oxide substrates. Similar effects were noted with increasing deposition rates. These two effects enable tailoring of the wetting layer thickness.

  19. Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

    International Nuclear Information System (INIS)

    Fritz, I.J.

    1987-01-01

    Experimental measurements of critical layer thicknesses (CLT's) in strained-layer epitaxy are considered. Finite experimental resolution can have a major effect on measured CLT's and can easily lead to spurious results. The theoretical approach to critical layer thicknesses of J. W. Matthews [J. Vac. Sci. Technol. 12, 126 (1975)] has been modified in a straightforward way to predict the apparent critical thickness for an experiment with finite resolution in lattice parameter. The theory has also been modified to account for the general empirical result that fewer misfit dislocations are generated than predicted by equilibrium calculation. The resulting expression is fit to recent x-ray diffraction data on InGaAs/GaAs and SiGe/Si. The results suggest that CLT's in these systems may not be significantly larger than predicted by equilibrium theory, in agreement with high-resolution measurements

  20. Effect of duration and severity of migraine on retinal nerve fiber layer, ganglion cell layer, and choroidal thickness.

    Science.gov (United States)

    Abdellatif, Mona K; Fouad, Mohamed M

    2018-03-01

    To investigate the factors in migraine that have the highest significance on retinal and choroidal layers' thickness. Ninety patients with migraine and 40 age-matched healthy participants were enrolled in this observational, cross-sectional study. After full ophthalmological examination, spectral domain-optical coherence tomography was done for all patients measuring the thickness of ganglion cell layer and retinal nerve fiber layer. Enhanced depth imaging technique was used to measure the choroidal thickness. There was significant thinning in the superior and inferior ganglion cell layers, all retinal nerve fiber layer quadrants, and all choroidal quadrants (except for the central subfield) in migraineurs compared to controls. The duration of migraine was significantly correlated with ganglion cell layer, retinal nerve fiber layer, and all choroidal quadrants, while the severity of migraine was significantly correlated with ganglion cell layer and retinal nerve fiber layer only. Multiregression analysis showed that the duration of migraine is the most important determinant factor of the superior retinal nerve fiber layer quadrant (β = -0.375, p = 0.001) and in all the choroidal quadrants (β = -0.531, -0.692, -0.503, -0.461, -0.564, respectively, p  layer quadrants (β = -0.256, -0.335, -0.308; p  = 0.036, 0.005, 0.009, respectively) and the inferior ganglion cell layer hemisphere (β = -0.377 and p = 0.001). Ganglion cell layer, retinal nerve fiber layer, and choroidal thickness are significantly thinner in patients with migraine. The severity of migraine has more significant influence in the thinning of ganglion cell layer and retinal nerve fiber layer, while the duration of the disease affected the choroidal thickness more.

  1. Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode.

    Science.gov (United States)

    Chen, Kun-Neng; Yang, Cheng-Fu; Wu, Chia-Ching; Chen, Yu-Hsin

    2017-02-24

    We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films.

  2. Layer thickness measurement using the X-ray fluorescence principle

    International Nuclear Information System (INIS)

    Mengelkamp, B.

    1980-01-01

    Curium 244 having a gamma energy of about 15.5 keV is used as excitation emitter for contactless and continuous measuring of the thickness of metallic layers on iron strip. Soft gamma radiation is absorbed in matter according to the photo effect, so that X-ray fluorescence radiation is generated in the matter, which depends on the element and is radiated to all sides. For instance, it amounts for iron 6.4 keV and is measured with a specific ionisation chamber for this energy range. With increasing atomic number of the elements, the energy of fluorescence radiation increases and hence also the emission signal of the detector. The prerequisite for a usable measuring effect is an element distance of at least two and the thickness of the layer to be measured being in an optimum range. A signal dependent on the thickness of the layer is produced either by absorption of iron radiation (absorption method - aluminium and tin) or by build-up radiation of the material of the layer (emission method - zinc and lead). (orig./GSCH) [de

  3. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  4. Retinal nerve fiber layer thickness and neuropsychiatric manifestations in systemic lupus erythematosus.

    Science.gov (United States)

    Shulman, S; Shorer, R; Wollman, J; Dotan, G; Paran, D

    2017-11-01

    Background Cognitive impairment is frequent in systemic lupus erythematosus. Atrophy of the corpus callosum and hippocampus have been reported in patients with systemic lupus erythematosus, and diffusion tensor imaging studies have shown impaired white matter integrity, suggesting that white matter damage in systemic lupus erythematosus may underlie the cognitive impairment as well as other neuropsychiatric systemic lupus erythematosus manifestations. Retinal nerve fiber layer thickness, as assessed by optical coherence tomography, has been suggested as a biomarker for white matter damage in neurologic disorders such as multiple sclerosis, Alzheimer's disease and Parkinson's disease. Retinal nerve fiber layer thinning may occur early, even in patients with mild clinical symptoms. Aim The objective of this study was to assess the association of retinal nerve fiber layer thickness, as a biomarker of white matter damage in systemic lupus erythematosus patients, with neuropsychiatric systemic lupus erythematosus manifestations, including cognitive impairment. Methods Twenty-one consecutive patients with systemic lupus erythematosus underwent neuropsychological testing using a validated computerized battery of tests as well as the Rey-Auditory verbal learning test. All 21 patients, as well as 11 healthy, age matched controls, underwent optical coherence tomography testing to assess retinal nerve fiber layer thickness. Correlations between retinal nerve fiber layer thickness and results in eight cognitive domains assessed by the computerized battery of tests as well as the Rey-Auditory verbal learning test were assessed in patients with systemic lupus erythematosus, with and without neuropsychiatric systemic lupus erythematosus, and compared to retinal nerve fiber layer thickness in healthy controls. Results No statistically significant correlation was found between retinal nerve fiber layer thickness in patients with systemic lupus erythematosus as compared to healthy

  5. Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

    OpenAIRE

    Kun-Neng Chen; Cheng-Fu Yang; Chia-Ching Wu; Yu-Hsin Chen

    2017-01-01

    We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (?-IGZO/Ag/?-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron...

  6. The effect of donor layer thickness on the power conversion efficiency of organic photovoltaic devices fabricated with a double small-molecular layer

    International Nuclear Information System (INIS)

    Lee, Su-Hwan; Kim, Dal-Ho; Shim, Tae-Hun; Park, Jea-Gun

    2009-01-01

    In organic photovoltaic (OPV) devices fabricated with a double small-molecular layer, the power conversion efficiency strongly depends on the thickness of the organic donor layer (here, copper phthalocyanine). In other words, the power conversion efficiency increases with the donor layer thickness up to a specific thickness (∼12.7 nm) and then decreases beyond that thickness. This trend is associated with the light absorption and carrier transport resistance of the small-molecular donor layer, both of which strongly depend on the layer thickness. Experimental and calculated results showed that the short-circuit current due to light absorption increased with the donor layer thickness, while that due to current through the donor layer decreased with 1/R. Since the total short-circuit current is the product of the light absorption current and current through the donor layer, there is a trade-off, and the maximum power conversion efficiency occurs at a specific organic donor layer thickness (e.g. ∼12.7 nm in this experiment).

  7. Amorphization threshold in Si-implanted strained SiGe alloy layers

    International Nuclear Information System (INIS)

    Simpson, T.W.; Love, D.; Endisch, E.; Goldberg, R.D.; Mitchell, I.V.; Haynes, T.E.; Baribeau, J.M.

    1994-12-01

    The authors have examined the damage produced by Si-ion implantation into strained Si 1-x Ge x epilayers. Damage accumulation in the implanted layers was monitored in situ by time-resolved reflectivity and measured by ion channeling techniques to determine the amorphization threshold in strained Si 1-x Ge x (x = 0.16 and 0.29) over the temperature range 30--110 C. The results are compared with previously reported measurements on unstrained Si 1-x Ge x , and with the simple model used to describe those results. They report here data which lend support to this model and which indicate that pre-existing strain does not enhance damage accumulation in the alloy layer

  8. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: Multi-parameter measurement reliability and precision studies

    International Nuclear Information System (INIS)

    Zhang, Y.; Melnikov, A.; Mandelis, A.; Halliop, B.; Kherani, N. P.; Zhu, R.

    2015-01-01

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters

  9. Optoelectronic transport properties in amorphous/crystalline silicon solar cell heterojunctions measured by frequency-domain photocarrier radiometry: multi-parameter measurement reliability and precision studies.

    Science.gov (United States)

    Zhang, Y; Melnikov, A; Mandelis, A; Halliop, B; Kherani, N P; Zhu, R

    2015-03-01

    A theoretical one-dimensional two-layer linear photocarrier radiometry (PCR) model including the presence of effective interface carrier traps was used to evaluate the transport parameters of p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) passivated by an intrinsic hydrogenated amorphous silicon (i-layer) nanolayer. Several crystalline Si heterojunction structures were examined to investigate the influence of the i-layer thickness and the doping concentration of the a-Si:H layer. The experimental data of a series of heterojunction structures with intrinsic thin layers were fitted to PCR theory to gain insight into the transport properties of these devices. The quantitative multi-parameter results were studied with regard to measurement reliability (uniqueness) and precision using two independent computational best-fit programs. The considerable influence on the transport properties of the entire structure of two key parameters that can limit the performance of amorphous thin film solar cells, namely, the doping concentration of the a-Si:H layer and the i-layer thickness was demonstrated. It was shown that PCR can be applied to the non-destructive characterization of a-Si:H/c-Si heterojunction solar cells yielding reliable measurements of the key parameters.

  10. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  11. Electrochemical synthesis, structure and phase composition of nano structured amorphous thin layers of NiW and Ni-Mo

    International Nuclear Information System (INIS)

    Vitina, I.; Lubane, M.; Belmane, V.; Rubene, V.; Krumina, A.

    2006-01-01

    Full text: Nano structured Ni-W thin layers containing W 6-37 wt.% were electrodeposited on a copper substratum. The W content in the layer changes, and it is determined by the electrolyte pH in the range 8.0-9.6 and the cathode current density in the range 1.0-10.0 A/dm 2 . The atomic composition and thermal stability of structure of the electrodeposited thin layers depend for the most part on the conditions of the electrodeposition and less on the W content in the layer. Cracking of the Ni-W layers electrodeposited at the electrolyte pH 8.5 and containing 34-37 wt.% W and 8.5 wt.% W was observed. The cracking increases at heating at 400 deg C for 50 h. On the contrary, no cracking of the Ni-W layer electrodeposited at the electrolyte pH 9.0 and containing 25 wt.% W was observed. The atomic composition of the layer remains practically unchanged at heating at 400 deg C for 50 h. The layer binds oxygen up to 7 wt.%. According to X-ray diffraction, in spite of the W content 35-37 wt.% in the layer, nano structured layers rather than amorphous layers were obtained which at heating at 400 deg C depending on the W content crystallises as Ni or intermetallic compounds Ni x W y if the W content is approx. 25 wt.%. Amorphous Ni-Mo alloys containing 35-52 wt.% Mo was electrodeposited on copper substratum at the cathode current densities of 0.5-1.5 A/dm2 and the electrolyte pH 6.8-8.6. Formation of thin layer (∼1-2μm) of X-ray amorphous Ni-Mo alloy, the Mo content, the characteristics of structure depend on the electrodeposition process, the electrolyte pH, and the cathode current density. The Ni-Mo layer deposited at the electrolyte pH above 8.6 and below average 6.8 had a nanocrystalline structure rather than characteristics of amorphous structure. Ni- W and Ni-Mo alloys were electrodeposited from citrate electrolyte not containing ammonium ions

  12. Peripapillary retinal nerve fiber layer and choroidal thickness in cirrhosis patients

    Directory of Open Access Journals (Sweden)

    M.Orcun Akdemir

    2015-12-01

    Full Text Available ABSTRACT Purpose: To evaluate the effect of cirrhosis on peripapillary retinal nerve fiber layer and choroidal thickness with enhanced depth imaging optical coherence tomography. Methods: This cross sectional, single center study was undertaken at Bulent Ecevit University Ophthalmology department with the participation of internal medicine, Gastroenterology department. Patients who were treated with the diagnosis of cirrhosis (n=75 were examined in the ophthalmology clinic. Age and sex matched patients (n=50 who were healthy and met the inclusion, exclusion criteria were included in the study. Complete ophthalmological examination included visual acuity with Snellen chart, intraocular pressure measurement with applanation tonometry, biomicroscopy of anterior and posterior segments, gonioscopy, axial length measurement, visual field examination, peripapillary retinal nerve fiber layer, central macular and subfoveal choroidal thickness measurements. Results: The difference between intraocular pressure values was not statistically significant between cirrhosis and control group (p=0.843. However, mean peripapillary retinal nerve fiber layer thickness was significantly thinner in cirrhosis group in all regions (p<0.001 and subfoveal choroidal thickness was significantly thinner in cirrhosis group also (p<0.001. Moreover, central macular thickness of cirrhosis group was significantly thicker than the control group (p=0.001. Conclusion: Peripapillary retinal nerve fiber layer and subfoveal choroidal thickness was significantly thinner in cirrhosis patients.

  13. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Directory of Open Access Journals (Sweden)

    Wei Yuan Wong

    2017-01-01

    Full Text Available Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  14. Optimization of intrinsic layer thickness, dopant layer thickness and concentration for a-SiC/a-SiGe multilayer solar cell efficiency performance using Silvaco software

    Science.gov (United States)

    Yuan, Wong Wei; Natashah Norizan, Mohd; Salwani Mohamad, Ili; Jamalullail, Nurnaeimah; Hidayah Saad, Nor

    2017-11-01

    Solar cell is expanding as green renewable alternative to conventional fossil fuel electricity generation, but compared to other land-used electrical generators, it is a comparative beginner. Many applications covered by solar cells starting from low power mobile devices, terrestrial, satellites and many more. To date, the highest efficiency solar cell is given by GaAs based multilayer solar cell. However, this material is very expensive in fabrication and material costs compared to silicon which is cheaper due to the abundance of supply. Thus, this research is devoted to develop multilayer solar cell by combining two different layers of P-I-N structures with silicon carbide and silicon germanium. This research focused on optimising the intrinsic layer thickness, p-doped layer thickness and concentration, n-doped layer thickness and concentration in achieving the highest efficiency. As a result, both single layer a-SiC and a-SiGe showed positive efficiency improvement with the record of 27.19% and 9.07% respectively via parametric optimization. The optimized parameters is then applied on both SiC and SiGe P-I-N layers and resulted the convincing efficiency of 33.80%.

  15. Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

    KAUST Repository

    Kim, Hyeonghun

    2018-02-05

    For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

  16. Amorphous Pd-assisted H 2 detection of ZnO nanorod gas sensor with enhanced sensitivity and stability

    KAUST Repository

    Kim, Hyeonghun; Pak, Yusin; Jeong, Yeonggyo; Kim, Woochul; Kim, Jeongnam; Jung, Gun Young

    2018-01-01

    For monitoring H2 concentrations in air, diverse resistive gas sensors have been demonstrated. In particular, Pd-decorated metal oxides have shown remarkable selectivity and sensing response for H2 detection. In this work, H2 sensing behavior of amorphous Pd layer covering ZnO nanorods (am-Pd/ZnO NRs) is investigated. This is the first report on the enhanced gas sensing performance attained by using an amorphous metal layer. The amorphous Pd layer is generated by reduction reaction with a strong reducing agent (NaBH4), and it covers the ZnO nanorods completely with a thickness of 2 ∼ 5 nm. For comparison, crystalline Pd nanoparticles-decorated ZnO nanorods (c-Pd/ZnO NRs) are produced using a milder reducing agent like hydrazine. Comparing the c-Pd/ZnO NRs sensor and other previously reported hydrogen sensors based on the crystalline Pd and metal oxides, the am-Pd/ZnO NRs sensor exhibits a remarkable sensing response (12,400% at 2% H2). The enhancement is attributed to complete cover of the amorphous Pd layer on the ZnO NRs, inducing larger interfaces between the Pd and ZnO. In addition, the amorphous Pd layer prevents surface contamination of the ZnO NRs. Therefore, the am-Pd/ZnO NRs sensor maintains initial sensing performance even after 5 months.

  17. Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

    2008-10-01

    A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

  18. Effect of layered manufacturing techniques, alloy powders, and layer thickness on metal-ceramic bond strength.

    Science.gov (United States)

    Ekren, Orhun; Ozkomur, Ahmet; Ucar, Yurdanur

    2018-03-01

    Direct metal laser sintering (DMLS) and direct metal laser melting (DMLM) have become popular for fabricating the metal frameworks of metal-ceramic restorations. How the type of layered manufacturing device, layer thickness, and alloy powder may affect the bond strength of ceramic to metal substructure is unclear. The purpose of this in vitro study was to evaluate the bond strength of dental porcelain to metal frameworks fabricated using different layered manufacturing techniques (DMLS and DMLM), Co-Cr alloy powders, and layer thicknesses and to evaluate whether a correlation exists between the bond strength and the number of ceramic remnants on the metal surface. A total of 75 bar-shaped metal specimens (n=15) were fabricated using either DMLS or DMLM. The powder alloys used were Keramit NP-S and EOS-Cobalt-Chrome SP-2 with layer thicknesses of 20 μm and 30 μm. After ceramic application, the metal-ceramic bond strength was evaluated with a 3-point-bend test. Three-way ANOVA followed by the Tukey honest significance difference test were used for statistical analysis (α=.05). De-bonding surface microstructure was observed with scanning electron microscopy. Energy dispersive spectroscopy analysis was conducted to evaluate the correlation between ceramic remnants on the metal surface and bond strength values. The mean bond strength value of DMLS was significantly higher than that of DMLM. While no statistically significant difference was found between layer thicknesses, alloy powders closely affected bond strength. Statistical comparisons revealed that the highest bond strength could be achieved with DMLS-Cobalt-Chrome SP2-20μm, and the lowest bond strength was observed in DMLS-Keramit NP-S-20μm (P≤.05). No correlation was found between porcelain remnants on the metal surface and bond strength values. The layered manufacturing device and the alloy powders evaluated in the current study closely affected the bond strength of dental porcelain to a metal framework

  19. Changes in Macular Retinal Layers and Peripapillary Nerve Fiber Layer Thickness after 577-nm Pattern Scanning Laser in Patients with Diabetic Retinopathy.

    Science.gov (United States)

    Shin, Ji Soo; Lee, Young Hoon

    2017-12-01

    The aim of this study was to evaluate the changes in thickness of each macular retinal layer, the peripapillary retinal nerve fiber layer (RNFL), and central macular thickness (CMT) after 577-nm pattern scanning laser (PASCAL) photocoagulation in patients with diabetic retinopathy. This retrospective study included 33 eyes with diabetic retinopathy that underwent 577-nm PASCAL photocoagulation. Each retinal layer thickness, peripapillary RNFL thickness, and CMT were measured by spectral-domain optical coherence tomography before 577-nm PASCAL photocoagulation, as well as at 1, 6, and 12 months after 577-nm PASCAL photocoagulation. Computerized intraretinal segmentation of optical coherence tomography was performed to identify the thickness of each retinal layer. The average thickness of the RNFL, ganglion cell layer, inner plexiform layer, inner nuclear layer, inner retinal layer, and CMT at each follow-up increased significantly from baseline (p 0.05). Each macular retinal layer and CMT had a tendency to increase for one year after 577-nm PASCAL photocoagulation, whereas the average thickness of retinal pigment epithelium decreased at one-year follow-up compared to the baseline. Although an increase in peripapillary RNFL thickness was observed one month after 577-nm PASCAL photocoagulation, there were no significant changes at the one-year follow-up compared to the baseline. © 2017 The Korean Ophthalmological Society

  20. Detection of charged particles in thick hydrogenated amorphous silicon layers

    International Nuclear Information System (INIS)

    Fujieda, I.; Cho, G.; Kaplan, S.N.; Perez-Mendez, V.; Qureshi, S.; Ward, W.; Street, R.A.

    1988-03-01

    We show our results in detecting particles of various linear energy transfer, including minimum ionizing electrons from a Sr-90 source with 5 to 12 micron thick n-i-p and p-i-n diodes. We measured W ( average energy to produce one electron-hole pair) using 17keV filtered xray pulses with a result W = 6.0 /+-/ 0.2eV. This is consistent with the expected value for a semiconductor with band gap of 1.7 to 1.9eV. With heavily ionizing particles such as 6 MeV alphas and 1 to 2 MeV protons, there was some loss of signal due to recombination in the particle track. The minimum ionizing electrons showed no sign of recombination. Applications to pixel and strip detectors for physics experiments and medical imaging will be discussed. 7 refs., 8 figs

  1. Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode

    Directory of Open Access Journals (Sweden)

    Kun-Neng Chen

    2017-02-01

    Full Text Available We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□ and high optical transmittance (88.1% at room temperature without postannealing processing on the deposited thin films.

  2. Synthesis and densification of Cu-coated Ni-based amorphous composite powders

    International Nuclear Information System (INIS)

    Kim, Yong-Jin; Kim, Byoung-Kee; Kim, Jin-Chun

    2007-01-01

    Spherical Ni 57 Zr 20 Ti 16 Si 2 Sn 3 (numbers indicate at.%) amorphous powders were produced by the gas atomization process, and ductile Cu phase was coated on the Ni-based amorphous powders by the spray drying process in order to increase the ductility of the consolidated amorphous alloy. The characteristics of the as-prepared powders and the consolidation behaviors of Cu-coated Ni-based amorphous composite powders were investigated. The atomization was conducted at 1450 deg. C under the vacuum of 10 -2 mbar. The Ni-based amorphous powders and Cu nitrate solution were mixed and sprayed at temperature of 130 deg. C. After spray drying and reduction treatment, the sub-micron size Cu powders were coated successfully on the surface of the atomized Ni amorphous powders. The spark plasma sintering process was applied to study the densification behavior of the Cu-coated composite powders. Thickness of the Cu layer was less than 1 μm. The compacts obtained by SPS showed high relative density of over 98% and its hardness was over 800 Hv

  3. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  4. Fabrication of luminescent porous silicon with stain etches and evidence that luminescence originates in amorphous layers

    Science.gov (United States)

    Fathauer, R. W.; George, T.; Ksendzov, A.; Lin, T. L.; Pike, W. T.; Vasquez, R. P.; Wu, Z.-C.

    1992-01-01

    Simple immersion of Si in stain etches of HF:HNO3:H2O or NaNO2 in aqueous HF was used to produce films exhibiting luminescence in the visible similar to that of anodically-etched porous Si. All of the luminescent samples consist of amorphous porous Si in at least the near surface region. No evidence was found for small crystalline regions within these amorphous layers.

  5. Highly (002) textured large grain bcc Cr{sub 80}Mn{sub 20} seed layer on Cr{sub 50}Ti{sub 50} amorphous layer for FePt-C granular film

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Seong-Jae, E-mail: jsjigst@ecei.tohoku.ac.jp; Saito, Shin [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Hinata, Shintaro [Department of Electronic Engineering, Tohoku University, 6-6-05 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Japan Society for the Promotion of Science Research Fellow (PD), 5-3-1, Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Takahashi, Migaku [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2015-05-07

    Effect of bcc Cr{sub 80}Mn{sub 20} seed layer and Cr{sub 50}Ti{sub 50} amorphous texture inducing layer on the heteroepitaxy system in FePt-C granular film was studied by introducing a new concept of the layered structure. The concept suggested that the large grain seed layer in which the crystallographic texture was initially formed on an amorphous layer in the layered structure can reduce the angular distribution of (002) c-axis crystal orientation in the FePt-C granular film owing to heteroepitaxial growth. Structure analysis by X-ray diffraction revealed that (1) when the substrate heating temperature was elevated from 300 °C to 500 °C, grain size in the seed layer increased from 9.8 nm to 11.6 nm, and then decreased with further increasing the substrate temperature. The reduction of the grain size over 500 °C corresponds to the crystallization of the amorphous texture inducing layer, (2) when the grain size increased from 9.8 nm to 11.6 nm, the angular distribution of the (002) orientation in the seed layer dramatically decreased from 13.7° to 4.1°. It was shown that the large grain seed layer increased the perpendicular hysteresis in FePt-C granular film.

  6. High-resolution transmission electron microscopy of grain-refining particles in amorphous aluminum alloys

    International Nuclear Information System (INIS)

    Schumacher, P.; Greer, A.L.

    1996-01-01

    The nucleation mechanism of Al-Ti-B grain refiners is studied in an Al-based amorphous alloy. The ability to limit growth of α-Al in the amorphous alloy permits the microscopical observation of nucleation events on boride particles. Earlier studies of this kind are extended by using high-resolution electron microscopy. This shows that the efficient nucleation α-Al depends on the TiB 2 particles being coated with a thin layer of Al 3 Ti, which can form only when there is some excess titanium in the melt. The aluminide layer, stabilized by adsorption effects, can be as little as a few monolayers thick, and is coherent with the boride. The nature of this layer, and its importance for the nucleation mechanism are discussed. The fading of the grain refinement action is also considered

  7. Flux-flow noise driven by quantum fluctuations in a thick amorphous film

    Energy Technology Data Exchange (ETDEWEB)

    Okuma, S. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan)]. E-mail: sokuma@o.cc.titech.ac.jp; Kainuma, K. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan); Kishimoto, T. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan); Kohara, M. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan)

    2006-10-01

    We measure the voltage-noise spectrum S {sub V}(f) (where f is a frequency) as well as the time (t)-dependent component {delta}V(t) of the flux-flow voltage in the low temperature liquid phase of a thick amorphous Mo {sub x}Si{sub 1-x} film. In the quantum-liquid phase both the amplitude vertical bar {delta}V vertical bar of voltage fluctuations and the asymmetry of the probability distribution of {delta}V(t) show an anomalous increase; the spectral shape of S {sub V}(f) is of a Lorentzian type, suggesting the shot-noise-like vortex motion with a large 'vortex-bundle size' and short characteristic time.

  8. Optimal thickness of hole transport layer in doped OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Y.C.; Zhou, J.; Zhao, J.M.; Zhang, S.T.; Zhan, Y.Q.; Wang, X.Z.; Wu, Y.; Ding, X.M.; Hou, X.Y. [Fudan University, Surface Physics Laboratory (National Key Laboratory), Shanghai (China)

    2006-06-15

    Current-voltage (I-V) and electroluminescence (EL) characteristics of organic light-emitting devices with N,N'-Di-[(1-naphthalenyl)-N,N'-diphenyl]-(1,1'-biphenyl)-4,4'-diamine (NPB) of various thicknesses as the hole transport layer, and tris(8-hydroxyquinoline)aluminum (Alq{sub 3}) selectively doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) as the electron transport layer, have been investigated. A trapped charge induced band bend model is proposed to explain the I-V characteristics. It is suggested that space charge changes the injection barrier and therefore influences the electron injection process in addition to the carrier transport process. Enhanced external quantum efficiency of the devices due to the electron blocking effect of an inserted NPB layer is observed. The optimal thickness of the NPB layer is experimentally determined to be 12{+-}3 nm in doped devices, a value different from that for undoped devices, which is attributed to the electron trap effect of DCM molecules. This is consistent with the result that the proportion of Alq{sub 3} luminescence in the total electroluminescence (EL) spectra increases with NPB thickness up to 12 nm under a fixed bias. (orig.)

  9. Minimum ionizing particle detection using amorphous silicon diodes

    Energy Technology Data Exchange (ETDEWEB)

    Xi, J.; Hollingsworth, R.E.; Buitrago, R.H. (Glasstech Solar, Inc., Wheat Ridge, CO (USA)); Oakley, D.; Cumalat, J.P.; Nauenberg, U. (Colorado Univ., Boulder (USA). Dept. of Physics); McNeil, J.A. (Colorado School of Mines, Golden (USA). Dept. of Physics); Anderson, D.F. (Fermi National Accelerator Lab., Batavia, IL (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1991-03-01

    Hydrogenated amorphous silicon pin diodes have been used to detect minimum ionizing electrons with a pulse height signal-to-noise ratio exceeding 3. A distinct signal was seen for shaping times from 100 to 3000 ns. The devices used had a 54 {mu}m thick intrinsic layer and an active area of 0.1 cm{sup 2}. The maximum signal was 3200 electrons with a noise width of 950 electrons for a shaping time of 250 ns. (orig.).

  10. The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

    Science.gov (United States)

    Chondroudis, Konstantinos; Mitzi, David B.

    2000-01-01

    The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

  11. Electrical properties of the regrown implantation-induced amorphous layer on (1 1-bar 0 0)- and (1 1 2-bar 0)-oriented 6H-SiC

    International Nuclear Information System (INIS)

    Nakamura, Tomonori; Tanabe, Hitoshi; Hitomi, Takeshi; Satoh, Masataka

    2003-01-01

    In the (1 1-bar 0 0) and (1 1 2-bar 0)-oriented 6H-SiC, the electrical properties and activation process of the implanted phosphorus in the layer regrown from the implantation-induced amorphous layer are investigated by means of Hall effect measurement and Rutherford backscattering spectrometry. The samples are implanted by 60 keV phosphorus ions at room temperature with doses of 3 x 10 15 and 1 x 10 15 cm -2 to form implantation-induced amorphous layer and the partially disordered implant-layer, respectively. The implanted phosphorus in the implantation-induced amorphous layer can be electrically activated by annealing at 1000 deg. C. The electrical activity for the case of the implantation-induced amorphous layer (ratio of sheet carrier concentration to ion dose) is 2-3 times larger than that for the case of the partially disordered implant-layer for the annealing temperature of 1500 deg. C

  12. Oxygen inhibition layer of composite resins: effects of layer thickness and surface layer treatment on the interlayer bond strength.

    Science.gov (United States)

    Bijelic-Donova, Jasmina; Garoushi, Sufyan; Lassila, Lippo V J; Vallittu, Pekka K

    2015-02-01

    An oxygen inhibition layer develops on surfaces exposed to air during polymerization of particulate filling composite. This study assessed the thickness of the oxygen inhibition layer of short-fiber-reinforced composite in comparison with conventional particulate filling composites. The effect of an oxygen inhibition layer on the shear bond strength of incrementally placed particulate filling composite layers was also evaluated. Four different restorative composites were selected: everX Posterior (a short-fiber-reinforced composite), Z250, SupremeXT, and Silorane. All composites were evaluated regarding the thickness of the oxygen inhibition layer and for shear bond strength. An equal amount of each composite was polymerized in air between two glass plates and the thickness of the oxygen inhibition layer was measured using a stereomicroscope. Cylindrical-shaped specimens were prepared for measurement of shear bond strength by placing incrementally two layers of the same composite material. Before applying the second composite layer, the first increment's bonding site was treated as follows: grinding with 1,000-grit silicon-carbide (SiC) abrasive paper, or treatment with ethanol or with water-spray. The inhibition depth was lowest (11.6 μm) for water-sprayed Silorane and greatest (22.9 μm) for the water-sprayed short-fiber-reinforced composite. The shear bond strength ranged from 5.8 MPa (ground Silorane) to 36.4 MPa (water-sprayed SupremeXT). The presence of an oxygen inhibition layer enhanced the interlayer shear bond strength of all investigated materials, but its absence resulted in cohesive and mixed failures only with the short-fiber-reinforced composite. Thus, more durable adhesion with short-fiber-reinforced composite is expected. © 2014 Eur J Oral Sci.

  13. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  14. Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

    Science.gov (United States)

    Piotr Michałowski, Paweł; Pasternak, Iwona; Ciepielewski, Paweł; Guinea, Francisco; Strupiński, Włodek

    2018-07-01

    Ion bombardment of graphene leads to the formation of defects which may be used to tune properties of the graphene based devices. In this work, however, we present that the presence of the graphene layer on a surface of a sample has a significant impact on the ion bombardment process: broken sp2 bonds react with the incoming ions and trap them close to the surface of the sample, preventing a standard ion implantation. For an ion bombardment with a low impact energy and significant dose (in the range of 1014 atoms cm‑2) an amorphization of the graphene layer is observed but at the same time, most of the incoming ions do not penetrate the sample but stop at the surface, thus forming a highly doped ultra-thin amorphous carbon layer. The effect may be used to create thin layers containing desired atoms if no other technique is available. This approach is particularly useful for secondary ion mass spectrometry where a high concentration of Cs at the surface of a sample significantly enhances the negative ionization probability, allowing it to reach better detection limits.

  15. High energy PIXE: A tool to characterize multi-layer thick samples

    Science.gov (United States)

    Subercaze, A.; Koumeir, C.; Métivier, V.; Servagent, N.; Guertin, A.; Haddad, F.

    2018-02-01

    High energy PIXE is a useful and non-destructive tool to characterize multi-layer thick samples such as cultural heritage objects. In a previous work, we demonstrated the possibility to perform quantitative analysis of simple multi-layer samples using high energy PIXE, without any assumption on their composition. In this work an in-depth study of the parameters involved in the method previously published is proposed. Its extension to more complex samples with a repeated layer is also presented. Experiments have been performed at the ARRONAX cyclotron using 68 MeV protons. The thicknesses and sequences of a multi-layer sample including two different layers of the same element have been determined. Performances and limits of this method are presented and discussed.

  16. The effect of amorphous selenium detector thickness on dual-energy digital breast imaging

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yue-Houng, E-mail: yuehoung.hu@gmail.com; Zhao, Wei [Department of Radiology, State University of New York at Stony Brook, L-4 120 Health Sciences Center, Stony Brook, New York 11794-8460 (United States)

    2014-11-01

    Purpose: Contrast enhanced (CE) imaging techniques for both planar digital mammography (DM) and three-dimensional (3D) digital breast tomosynthesis (DBT) applications requires x-ray photon energies higher than the k-edge of iodine (33.2 keV). As a result, x-ray tube potentials much higher (>40 kVp) than those typical for screening mammography must be utilized. Amorphous selenium (a-Se) based direct conversion flat-panel imagers (FPI) have been widely used in DM and DBT imaging systems. The a-Se layer is typically 200 μm thick with quantum detective efficiency (QDE) >87% for x-ray energies below 26 keV. However, QDE decreases substantially above this energy. To improve the object detectability of either CE-DM or CE-DBT, it may be advantageous to increase the thickness (d{sub Se}) of the a-Se layer. Increasing the d{sub Se} will improve the detective quantum efficiency (DQE) at the higher energies used in CE imaging. However, because most DBT systems are designed with partially isocentric geometries, where the gantry moves about a stationary detector, the oblique entry of x-rays will introduce additional blur to the system. The present investigation quantifies the effect of a-Se thickness on imaging performance for both CE-DM and CE-DBT, discussing the effects of improving photon absorption and blurring from oblique entry of x-rays. Methods: In this paper, a cascaded linear system model (CLSM) was used to investigate the effect of d{sub Se} on the imaging performance (i.e., MTF, NPS, and DQE) of FPI in CE-DM and CE-DBT. The results from the model are used to calculate the ideal observer signal-to-noise ratio, d′, which is used as a figure-of-merit to determine the total effect of increasing d{sub Se} for CE-DM and CE-DBT. Results: The results of the CLSM show that increasing d{sub Se} causes a substantial increase in QDE at the high energies used in CE-DM. However, at the oblique projection angles used in DBT, the increased length of penetration through a

  17. Enface Thickness Mapping and Reflectance Imaging of Retinal Layers in Diabetic Retinopathy.

    Science.gov (United States)

    Francis, Andrew W; Wanek, Justin; Lim, Jennifer I; Shahidi, Mahnaz

    2015-01-01

    To present a method for image segmentation and generation of enface thickness maps and reflectance images of retinal layers in healthy and diabetic retinopathy (DR) subjects. High density spectral domain optical coherence tomography (SDOCT) images were acquired in 10 healthy and 4 DR subjects. Customized image analysis software identified 5 retinal cell layer interfaces and generated thickness maps and reflectance images of the total retina (TR), inner retina (IR), outer retina (OR), and the inner segment ellipsoid (ISe) band. Thickness maps in DR subjects were compared to those of healthy subjects by generating deviation maps which displayed retinal locations with thickness below, within, and above the normal 95% confidence interval. In healthy subjects, TR and IR thickness maps displayed the foveal depression and increased thickness in the parafoveal region. OR and ISe thickness maps showed increased thickness at the fovea, consistent with normal retinal anatomy. In DR subjects, thickening and thinning in localized regions were demonstrated on TR, IR, OR, and ISe thickness maps, corresponding to retinal edema and atrophy, respectively. TR and OR reflectance images showed reduced reflectivity in regions of increased thickness. Hard exudates appeared as hyper-reflective spots in IR reflectance images and casted shadows on the deeper OR and ISe reflectance images. The ISe reflectance image clearly showed the presence of focal laser scars. Enface thickness mapping and reflectance imaging of retinal layers is a potentially useful method for quantifying the spatial and axial extent of pathologies due to DR.

  18. On the Explicit Expression for Plasma Layer Thickness

    CERN Document Server

    Sharma, R K

    2004-01-01

    The marginal zone theory is used to account for the observed Fahreus Linquist effect when the viscoity of blood changes with the diameter of the capillary. An attributable cause is the axial accumulation of cells. The discharge rate from Hagen Poiseulle law at steady state was derived by Haynes (1960) for the core and plasma layer and a total discharge rate was expressed as a function of the pressure drop along the capillary, quartic dependence on the radius of the capillary and quartic dependence on the dimensionless marginal zone thickness. The apparent of viscosity of the blood is expressed as a function of the ratio of the core layer viscosity and the plasma layer viscosity. In order to back out a marginal zone thickness from a given set of information, the Charm and Kurland expression (1974) for the viscosity and hematocrit variation and the temperature dependence parameter of the hematocrit alpha can be used to develop two transcendental equations and two un! knowns. This is the recommended procedure us...

  19. On a Explicit Expresion for Plasma Layer Thickness

    CERN Document Server

    Sharma, R K

    2004-01-01

    The marginal zone theory is used to account for the observed Fahreus Linquist effect when the viscoity of blood changes with the diameter of the capillary. An attributable cause is the axial accumulation of cells. The discharge rate from Hagen Poiseulle law at steady state was derived by Haynes (1960) for the core and plasma layer and a total discharge rate was expressed as a function of the pressure drop along the capillary, quartic dependence on the radius of the capillary and quartic dependence on the dimensionless marginal zone thickness. The apparent of viscosity of the blood is expressed as a function of the ratio of the core layer viscosity and the plasma layer viscosity. In order to back out a marginal zone thickness from a given set of information, the Charm and Kurland expression (1974) for the viscosity and hematocrit variation and the temperature dependence parameter of the hematocrit alpha can be used to develop two transcendental equations and two un! knowns. This is the recommended procedure us...

  20. Oxide thickness measurement technique for duplex-layer Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    McClelland, R.G.; O'Leary, P.M.

    1992-01-01

    Siemens Nuclear Power Corporation (SNP) is investigating the use of duplex-layer Zircaloy-4 tubing to improve the waterside corrosion resistance of cladding for high-burnup pressurized water reactor (PWR) fuel designs. Standard SNP PWR cladding is typically 0.762-mm (0.030-in.)-thick Zircaloy-4. The SNP duplex cladding is nominally 0.660-mm (0.026-in.)-thick Zircalloy-4 with an ∼0.102-mm (0.004-in.) outer layer of another, more corrosion-resistant, zirconium-based alloy. It is common industry practice to monitor the in-reactor corrosion behavior of Zircaloy cladding by using an eddy-current 'lift-off' technique to measure the oxide thickness on the outer surface of the fuel cladding. The test program evaluated three different cladding samples, all with the same outer diameter and wall thickness: Zircaloy-4 and duplex clad types D2 and D4

  1. Magnetic properties of sandwiches based on Nd-Co and Y-Co amorphous alloys

    International Nuclear Information System (INIS)

    Ndjaka, J.M.B.; Givord, D.

    1996-01-01

    Y-Co/Nd-Co/Y-Co and Nd-Co/Y-Co/Nd-Co amorphous sandwiches have been prepared by d.c. triode sputtering. The chemical composition of the constituent layers is R 0.33 Co 0.67 (R=Y, Nd). In such systems, the Co moments are coupled parallel through the whole sandwich thickness by strong positive 3d-3d exchange interactions. But, the coercive fields of the constituent layers taken separately differ. In the sandwiches as well, the reversal of magnetization in the different layers occurs at different values of the applied magnetic field. This phenomenon has been analysed qualitatively in terms of creation and annihilation of walls at the interfaces between layers for sandwiches where the thicknesses of the constituent layers are about 1000 A. In sandwiches where the thickness of the constituent layers is 100 A, the wall width available is very weak and the value of the applied magnetic field necessary for the creation of such a wall is higher than the coercive field of the entire sandwich system. As a result, the magnetization of the sandwich system reverses as a whole like in homogeneous systems. (orig.)

  2. Thermal stability of double-ceramic-layer thermal barrier coatings with various coating thickness

    International Nuclear Information System (INIS)

    Dai Hui; Zhong Xinghua; Li Jiayan; Zhang Yanfei; Meng Jian; Cao Xueqiang

    2006-01-01

    Double-ceramic-layer (DCL) coatings with various thickness ratios composed of YSZ (6-8 wt.% Y 2 O 3 + ZrO 2 ) and lanthanum zirconate (LZ, La 2 Zr 2 O 7 ) were produced by the atmospheric plasma spraying. Chemical stability of LZ in contact with YSZ in DCL coatings was investigated by calcining powder blends at different temperatures. No obvious reaction was observed when the calcination temperature was lower than 1250 deg. C, implying that LZ and YSZ had good chemical applicability for producing DCL coating. The thermal cycling test indicate that the cycling lives of the DCL coatings are strongly dependent on the thickness ratio of LZ and YSZ, and the coatings with YSZ thickness between 150 and 200 μm have even longer lives than the single-layer YSZ coating. When the YSZ layer is thinner than 100 μm, the DCL coatings failed in the LZ layer close to the interface of YSZ layer and LZ layer. For the coatings with the YSZ thickness above 150 μm, the failure mainly occurs at the interface of the YSZ layer and the bond coat

  3. Variations of retinal nerve fiber layer thickness and ganglion cell-inner plexiform layer thickness according to the torsion direction of optic disc.

    Science.gov (United States)

    Lee, Kang Hoon; Kim, Chan Yun; Kim, Na Rae

    2014-02-20

    To examine the relationship between the optic disc torsion and peripapillary retinal nerve fiber layer (RNFL) thickness through a comparison with the macular ganglion cell inner plexiform layer complex (GCIPL) thickness measured by Cirrus optical coherence tomography (OCT). Ninety-four eyes of 94 subjects with optic disc torsion and 114 eyes of 114 subjects without optic disc torsion were enrolled prospectively. The participants underwent fundus photography and OCT imaging in peripapillary RNFL mode and macular GCIPL mode. The participants were divided into groups according to the presence or absence of optic disc torsion. The eyes with optic disc torsion were further divided into supranasal torsion and inferotemporal torsion groups according to the direction of optic disc torsion. The mean RNFL and GCIPL thicknesses for the quadrants and subsectors were compared. The superior and inferior peak locations of the RNFL were also measured according to the torsion direction. The temporal RNFL thickness was significantly thicker in inferotemporal torsion, whereas the GCIPL thickness at all segments was unaffected. The inferotemporal optic torsion had more temporally positioned superior peak locations of the RNFL than the nontorsion and supranasal-torted optic disc. Thickening of the temporal RNFL with a temporal shift in the superior peak within the eyes with inferotemporal optic disc torsion can lead to interpretation errors. The ganglion cell analysis algorithm can assist in differentiating eyes with optic disc torsion.

  4. Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

    Science.gov (United States)

    Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

    2018-01-01

    Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

  5. Quantification of retinal layer thickness changes in acute macular neuroretinopathy

    DEFF Research Database (Denmark)

    Munk, Marion R.; Beck, Marco; Kolb, Simone

    2017-01-01

    Purpose To quantitatively evaluate retinal layer thickness changes in acute macular neuroretinopathy (AMN). Methods AMN areas were identified using near-infrared reflectance (NIR) images. Intraretinal layer segmentation using Heidelberg software was performed. The inbuilt ETDRS -grid was moved on...

  6. Survey of Nerve Fiber Layer Thickness in Anisometropic and Strabismic Amblyopia

    Directory of Open Access Journals (Sweden)

    Reza Soltani Moghaddam

    2017-02-01

    Full Text Available . To investigate the effect of anisometropic and strabismic amblyopia on the nerve fiber layer thickness. This cross-sectional study was done on 54 amblyopic subjects, equally in both strabismic and anisometropic groups. The thickness otonerve fiber layer measured in superior, inferior, nasal, temporal quadrants and as a whole in both eyes of both groups. The means of thickness were compared in amblyopic and sound eyes. In strabismus group, the average nerve fiber layer thickness of the sound eye , in superior, inferior, nasal and temporal quadrants and as a whole were 113.23±14, 117.37±25, 68.96±6, 69.55±14 and 93.40±8 microns respectively. In amblyopic eyes of the same group, these measurements were 103.11±18, 67.74±11, and 69.59±16 and 89.59±12 microns in superior, inferior, nasal, temporal quadrants and as whole respectively. In anisometropic groups, the sound eye measurements were as 130.96±22, 129.07±29, 80.62±12, and 83.88±20 and 107.7±13 microns in superior, inferior, nasal and temporal quadrants and as a whole orderly. In amblyopic eyes of this group the mean thicknesses were 115.63±29, 133.15±25, 78.8±15, 80.2±16 and 109.17±21 microns in superior, inferior, nasal, temporal quadrants and as a whole respectively. Statistically, there were no significant differences between amblyopic and sound eyes (P>0.5. Our study did not support any significant change in a nerve fiber layer thickness of amblyopic patients; however, decreased thickness in superior and nasal quadrants of strabismic amblyopia and except inferior quadrant and as a whole. These measurements may be a clue for management and prognosis of amblyopia in old age.

  7. Fabrication of Hydrogenated Amorphous Germanium Thin Layer Film and ItsCharacterization

    International Nuclear Information System (INIS)

    Agus-Santoso; Lely-Susita RM; Tjipto-Sujitno

    2000-01-01

    Fabrication of hydrogenated amorphous Germanium thin film by vacuumevaporation method and then deposition with hydrogen atom by glow dischargeplasma radio frequency has been done. This germanium amorphous (a-Ge) thinfilm involves a lot of dangling bonds in the network due to the irregularityof the atomic structures and it will decrease is conductivity. To improve theband properties of (a-Ge) thin film layer a hydrogenated plasma isintroduced. Process of introducing of the hydrogen into the a-Ge film is meanto reduce the dangling bonds so that the best electric conductivity of a Ge:Hthin film will obtained. To identify the hydrogen atom in the sample acharacterization using infrared spectrometer has been done, as well as themeasurement of conductivity of the samples. From the characterization usinginfrared spectroscopy the existence of hydrogen atom was found at absorptionpeak with wave number 1637.5 cm -1 , while the optimum conductivity of thesample 1634.86 Ω -1 cm -1 was achieved at 343 o K. (author)

  8. Magnetotransport in spin-valve systems with amorphous magnetic and superconducting partial layers

    International Nuclear Information System (INIS)

    Steiner, Roland Johannes

    2006-01-01

    The first part of this work deals with the fabrication and characterisation of spin valves with an amorphous FeB layer acting as a weak ferromagnet embedded into the structure. In the second part of this work ferromagnet/superconductor hybrid structures are fabricated and the relevant magnetic field dependent transport phenomena are analyzed. The interlayer of a conventional spin valve was replaced by a superconducting niobium layer. Small applied fields close to the coercivity field of the involved ferromagnets - and thus far below the critical magnetic field of the superconductor - affected the critical temperature of the niobium layer. Measurements of the field dependent resistance and the critical temperature of a FM/SC/FMsystem showed a local maximum in the T c (H)- and the R(H)-curve. (orig.)

  9. Specific heat of amorphous 3He films and confined liquid 3He

    International Nuclear Information System (INIS)

    Golov, A.; Pobell, F.

    1995-01-01

    We have measured the heat capacities of 3 He films and liquid 3 He in porous Vycor glass at 10 to 600 mK. With increasing the film thickness front 1 to 3 atomic layers , the specific heat evolves gradually from that typical to solid to that of liquid 3 He. At about 2 atomic layers, however, its low-temperature part is nearly temperature-independent; we interpret this as a result of gradual freezing of spins in an amorphous solid 3 He film with decreasing the temperature. The contribution of liquid 3 He in the center of the Vycor pores can be described as the specific heat of bulk liquid 3 He at corresponding pressures in the range 0 to 28 bar. The thickness of amorphous solid on the pore walls increases with external pressure roughly linearly. Preplating the walls with 4 He allows to determine the positions of 3 He atoms contributing to the surface specific heat at 10 to 50 mK. In addition, the contribution from the specific heat of 3 He- 4 He mixing at 100 to 600 mK is discussed as a function of pressure and amount of 4 He

  10. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Energy Technology Data Exchange (ETDEWEB)

    Hutchinson, David [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Department of Physics and Nuclear Engineering, United States Military Academy, West Point NY 10996 (United States); Mathews, Jay [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States); Department of Physics, University of Dayton, Dayton, OH 45469 (United States); Sullivan, Joseph T.; Buonassisi, Tonio [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Akey, Austin [School of Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 (United States); Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Aziz, Michael J. [Harvard John A. Paulson School of Engineering and Applied Sciences, Cambridge MA 02138 (United States); Persans, Peter [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180 (United States); Warrender, Jeffrey M., E-mail: jwarrend@post.harvard.edu [US Army ARDEC – Benét Laboratories, Watervliet NY 12189 (United States)

    2016-05-15

    We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE) is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011)] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011)], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  11. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur

    Directory of Open Access Journals (Sweden)

    David Hutchinson

    2016-05-01

    Full Text Available We report on a simple experiment in which the thickness of a hyperdoped silicon layer, supersaturated with sulfur by ion implantation followed by pulsed laser melting and rapid solidification, is systematically varied at constant average sulfur concentration, by varying the implantation energy, dose, and laser fluence. Contacts are deposited and the external quantum efficiency (EQE is measured for visible wavelengths. We posit that the sulfur layer primarily absorbs light but contributes negligible photocurrent, and we seek to support this by analyzing the EQE data for the different layer thicknesses in two interlocking ways. In the first, we use the measured concentration depth profiles to obtain the approximate layer thicknesses, and, for each wavelength, fit the EQE vs. layer thickness curve to obtain the absorption coefficient of hyperdoped silicon for that wavelength. Comparison to literature values for the hyperdoped silicon absorption coefficients [S.H. Pan et al. Applied Physics Letters 98, 121913 (2011] shows good agreement. Next, we essentially run this process in reverse; we fit with Beer’s law the curves of EQE vs. hyperdoped silicon absorption coefficient for those wavelengths that are primarily absorbed in the hyperdoped silicon layer, and find that the layer thicknesses obtained from the fit are in good agreement with the original values obtained from the depth profiles. We conclude that the data support our interpretation of the hyperdoped silicon layer as providing negligible photocurrent at high S concentrations. This work validates the absorption data of Pan et al. [Applied Physics Letters 98, 121913 (2011], and is consistent with reports of short mobility-lifetime products in hyperdoped layers. It suggests that for optoelectronic devices containing hyperdoped layers, the most important contribution to the above band gap photoresponse may be due to photons absorbed below the hyperdoped layer.

  12. Comparisons of retinal nerve fiber layer thickness changes after macular hole surgery

    Directory of Open Access Journals (Sweden)

    Nelson Chamma Capelanes

    Full Text Available ABSTRACT Purpose: To compare postoperative changes in retinal nerve fiber layer thickness in patients with macular holes treated with vitrectomy with Brilliant Blue-assisted internal limiting membrane peeling. Methods: Twenty-two eyes of 20 patients with macular holes were studied. Each eye was selected to undergo Brilliant Blue-assisted internal limiting membrane peeling. The circumferential retinal nerve fiber layer thickness was determined using spectral domain optical coherence tomography preoperatively and 2 months postoperatively. Mean overall and sectoral retinal nerve fiber layer thicknesses were obtained for each patient. Results: There was no statistically significant difference (p≥0.05 between the pre- and post-treatment measurements in relation to each CFN variable, i.e., on average, pre-treatment measures were the same as post-treatment measures. Furthermore, despite the differences between the pre- and post-treatment measures always being positive (pre-post >0, they are not statistically significant. Conclusions: This study showed no significant decrease in retinal nerve fiber layer thickness measurements after macular holes surgery, regardless of age or sex.

  13. Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

    Directory of Open Access Journals (Sweden)

    Taweewat Krajangsang

    2014-01-01

    Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

  14. Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Tekgül, Atakan, E-mail: atakantekgul@gmail.com [Akdeniz University, Physics Department, Science Faculty, TR-07058 Antalya (Turkey); Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Alper, Mürsel [Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Kockar, Hakan [Balikesir University, Physics Department, Science and Literature Faculty, TR-10145 Balikesir (Turkey)

    2017-01-01

    The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current–time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of −0.3 and −1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices. - Highlights: • The much thinner (0.5 nm) Cu layer was used to obtain the GMR effect on the electrodeposited CoFe/Cu multilayers. • All samples exhibited GMR and the maximum GMR value was 5.5%. • The M{sub s} and the H{sub c} changed with increasing magnetic layer thickness.

  15. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  16. Thick amorphous silicon layers suitable for the realization of radiation detectors

    International Nuclear Information System (INIS)

    Hong, Wan-Shick; Drewery, J.S.; Jing, Tao; Lee, Hyong-Koo; Perez-Mendez, V.; Petrova-Koch, V.

    1995-04-01

    Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH 4 at a substrate temperature ∼ 150 degree C and subsequent annealing at 160 degree C for about 100 hours. The stress in the films obtained this way decreased to ∼ 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 x 10 15 cm -3 to 7 x 10 14 cm -3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material

  17. Top layer's thickness dependence on total electron-yield X-ray standing-wave

    International Nuclear Information System (INIS)

    Ejima, Takeo; Yamazaki, Atsushi; Banse, Takanori; Hatano, Tadashi

    2005-01-01

    A Mo single-layer film with a stepwise thickness distribution was fabricated on the same Mo/Si reflection multilayer film. Total electron-yield X-ray standing-wave (TEY-XSW) spectra of the aperiodic multilayer were measured with reflection spectra. The peak positions of the standing waves in the TEY-XSW spectra changed as the film thickness of the top Mo-layer increased

  18. Spacer layer effect and microstructure on multi-layer [NdFeB/Nb]n films

    International Nuclear Information System (INIS)

    Tsai, J.-L.; Yao, Y.-D.; Chin, T.-S.; Kronmueller, H.

    2002-01-01

    Spacer layer effect on multi-layer [NdFeB/Nb] n films has been investigated from the variation of magnetic properties and microstructure of the films. From a HRTEM cross-section view observation, the average grain size of [NdFeB/Nb] n multi-layers was controlled by both annealing temperature and thickness of NdFeB layer. Selected area diffraction pattern indicated that the structure of Nb spacer layer was amorphous. The grain size and coercivity of [NdFeB x /Nb] n films change from 50 nm and 16.7 kOe to 167 nm and 9 kOe for films with x=40 nm, n=10 and x=200 nm, n=2, respectively

  19. Prediction of Layer Thickness in Molten Borax Bath with Genetic Evolutionary Programming

    Science.gov (United States)

    Taylan, Fatih

    2011-04-01

    In this study, the vanadium carbide coating in molten borax bath process is modeled by evolutionary genetic programming (GEP) with bath composition (borax percentage, ferro vanadium (Fe-V) percentage, boric acid percentage), bath temperature, immersion time, and layer thickness data. Five inputs and one output data exist in the model. The percentage of borax, Fe-V, and boric acid, temperature, and immersion time parameters are used as input data and the layer thickness value is used as output data. For selected bath components, immersion time, and temperature variables, the layer thicknesses are derived from the mathematical expression. The results of the mathematical expressions are compared to that of experimental data; it is determined that the derived mathematical expression has an accuracy of 89%.

  20. Predicting the Equilibrium Deuterium-Tritium Fuel Layer Thickness Profile in an Indirect-Drive Hohlraum Capsule

    International Nuclear Information System (INIS)

    Sanchez, Jorge J.; Giedt, Warren H.

    2004-01-01

    A numerical procedure for calculating the equilibrium thickness distribution of a thin layer of deuterium and tritium on the inner surface of an indirect drive target sphere (∼2.0 mm in diameter) is described. Starting with an assumed uniform thickness layer and with specified thermal boundary conditions, the temperature distribution throughout the capsule and hohlraum (including natural convection in the hohlraum gas) is calculated. Results are used to make a first estimate of the final non-uniform thickness distribution of the layer. This thickness distribution is then used to make a second calculation of the temperature distribution with the same boundary conditions. Legendre polynomial coefficients are evaluated for the two temperature distributions and the two thickness profiles. Final equilibrium Legendre coefficients are determined by linear extrapolation. From these coefficients, the equilibrium layer thickness can be computed

  1. Methods To Determine the Silicone Oil Layer Thickness in Sprayed-On Siliconized Syringes.

    Science.gov (United States)

    Loosli, Viviane; Germershaus, Oliver; Steinberg, Henrik; Dreher, Sascha; Grauschopf, Ulla; Funke, Stefanie

    2018-01-01

    The silicone lubricant layer in prefilled syringes has been investigated with regards to siliconization process performance, prefilled syringe functionality, and drug product attributes, such as subvisible particle levels, in several studies in the past. However, adequate methods to characterize the silicone oil layer thickness and distribution are limited, and systematic evaluation is missing. In this study, white light interferometry was evaluated to close this gap in method understanding. White light interferometry demonstrated a good accuracy of 93-99% for MgF 2 coated, curved standards covering a thickness range of 115-473 nm. Thickness measurements for sprayed-on siliconized prefilled syringes with different representative silicone oil distribution patterns (homogeneous, pronounced siliconization at flange or needle side, respectively) showed high instrument (0.5%) and analyst precision (4.1%). Different white light interferometry instrument parameters (autofocus, protective shield, syringe barrel dimensions input, type of non-siliconized syringe used as base reference) had no significant impact on the measured average layer thickness. The obtained values from white light interferometry applying a fully developed method (12 radial lines, 50 mm measurement distance, 50 measurements points) were in agreement with orthogonal results from combined white and laser interferometry and 3D-laser scanning microscopy. The investigated syringe batches (lot A and B) exhibited comparable longitudinal silicone oil layer thicknesses ranging from 170-190 nm to 90-100 nm from flange to tip and homogeneously distributed silicone layers over the syringe barrel circumference (110- 135 nm). Empty break-loose (4-4.5 N) and gliding forces (2-2.5 N) were comparably low for both analyzed syringe lots. A silicone oil layer thickness of 100-200 nm was thus sufficient for adequate functionality in this particular study. Filling the syringe with a surrogate solution including short

  2. van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

    Science.gov (United States)

    Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

    2018-03-01

    Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

  3. Amorphous and microcrystalline silicon applied in very thin tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schicho, Sandra

    2011-07-28

    Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

  4. Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors.

    Science.gov (United States)

    Marrs, Michael A; Raupp, Gregory B

    2016-07-26

    Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode passivation layers can greatly improve the electrical performance and the mechanical reliability of the device, thereby eliminating one of the major weaknesses of a-Si PIN diodes in comparison to alternative photodetector technology, such as organic bulk heterojunction photodiodes and amorphous selenium. A dark current of 0.5 pA/mm² and photodiode quantum efficiency of 74% are possible with a pixelated diode structure with a silicon nitride/SU-8 bilayer passivation structure on a 20 µm-thick polyimide substrate.

  5. The multilayered structure of ultrathin amorphous carbon films synthesized by filtered cathodic vacuum arc deposition

    KAUST Repository

    Wang, Na

    2013-08-01

    The structure of ultrathin amorphous carbon (a-C) films synthesized by filtered cathodic vacuum arc (FCVA) deposition was investigated by high-resolution transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy. Results of the plasmon excitation energy shift and through-thickness elemental concentration show a multilayered a-C film structure comprising an interface layer consisting of C, Si, and, possibly, SiC, a buffer layer with continuously increasing sp 3 fraction, a relatively thicker layer (bulk film) of constant sp 3 content, and an ultrathin surface layer rich in sp 2 hybridization. A detailed study of the C K-edge spectrum indicates that the buffer layer between the interface layer and the bulk film is due to the partial backscattering of C+ ions interacting with the heavy atoms of the silicon substrate. The results of this study provide insight into the minimum thickness of a-C films deposited by FCVA under optimum substrate bias conditions. Copyright © 2013 Materials Research Society.

  6. Enhanced Performance of Nanowire-Based All-TiO2 Solar Cells using Subnanometer-Thick Atomic Layer Deposited ZnO Embedded Layer

    International Nuclear Information System (INIS)

    Ghobadi, Amir; Yavuz, Halil I.; Ulusoy, T. Gamze; Icli, K. Cagatay; Ozenbas, Macit; Okyay, Ali K.

    2015-01-01

    In this paper, the effect of angstrom-thick atomic layer deposited (ALD) ZnO embedded layer on photovoltaic (PV) performance of Nanowire-Based All-TiO 2 solar cells has been systematically investigated. Our results indicate that by varying the thickness of ZnO layer the efficiency of the solar cell can be significantly changed. It is shown that the efficiency has its maximum for optimal thickness of 1 ALD cycle in which this ultrathin ZnO layer improves device performance through passivation of surface traps without hampering injection efficiency of photogenerated electrons. The mechanisms contributing to this unprecedented change in PV performance of the cell have been scrutinized and discussed

  7. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Science.gov (United States)

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  8. Material parameters in a thick hydrogenated amorphous silicon detector and their effect on signal collection

    International Nuclear Information System (INIS)

    Qureshi, S.; Perez-Mendez, V.; Kaplan, S.N.; Fujieda, I.; Cho, G.; Street, R.A.

    1989-04-01

    Transient photoconductivity and ESR measurements were done to relate the ionized dangling bond density of thick hydrogenated amorphous silicon (a-Si:H) detectors. We found that only a fraction (/approximately/30--35%) of the total defect density as measured by ESR is ionized when the detector is biased into deep depletion. The measurements on annealed samples also show that this fraction is about 0.3. An explanation based on the shift of the Fermi energy is given. The measurements show that the time dependence of relaxation is a stretched exponential. 8 refs., 4 figs., 1 tab

  9. Asymmetric transmission of acoustic waves in a layer thickness distribution gradient structure using metamaterials

    Directory of Open Access Journals (Sweden)

    Jung-San Chen

    2016-09-01

    Full Text Available This research presents an innovative asymmetric transmission design using alternate layers of water and metamaterial with complex mass density. The directional transmission behavior of acoustic waves is observed numerically inside the composite structure with gradient layer thickness distribution and the rectifying performance of the present design is evaluated. The layer thickness distributions with arithmetic and geometric gradients are considered and the effect of gradient thickness on asymmetric wave propagation is systematically investigated using finite element simulation. The numerical results indicate that the maximum pressure density and transmission through the proposed structure are significantly influenced by the wave propagation direction over a wide range of audible frequencies. Tailoring the thickness of the layered structure enables the manipulation of asymmetric wave propagation within the desired frequency range. In conclusion, the proposed design offers a new possibility for developing directional-dependent acoustic devices.

  10. Impacts of age and sex on retinal layer thicknesses measured by spectral domain optical coherence tomography with Spectralis.

    Science.gov (United States)

    Nieves-Moreno, María; Martínez-de-la-Casa, José M; Morales-Fernández, Laura; Sánchez-Jean, Rubén; Sáenz-Francés, Federico; García-Feijoó, Julián

    2018-01-01

    To examine differences in individual retinal layer thicknesses measured by spectral domain optical coherence tomography (SD-OCT) (Spectralis®) produced with age and according to sex. Cross-sectional, observational study. The study was conducted in 297 eyes of 297 healthy subjects aged 18 to 87 years. In one randomly selected eye of each participant the volume and mean thicknesses of the different macular layers were measured by SD-OCT using the instrument's macular segmentation software. Volume and mean thickness of macular retinal nerve fiber layer (mRNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), inner nuclear layer (INL), outer plexiform layer (OPL), outer nuclear layer (ONL), retinal pigmentary epithelium (RPE) and photoreceptor layer (PR). Retinal thickness was reduced by 0.24 μm for every one year of age. Age adjusted linear regression analysis revealed mean GCL, IPL, ONL and PR thickness reductions and a mean OPL thickness increase with age. Women had significantly lower mean GCL, IPL, INL, ONL and PR thicknesses and volumes and a significantly greater mRNFL volume than men. The thickness of most retinal layers varies both with age and according to sex. Longitudinal studies are needed to determine the rate of layer thinning produced with age.

  11. Thickness optimization of the ZnO based TCO layer in a CZTSSe solar cell. Evolution of its performance with thickness when external temperature changes.

    Science.gov (United States)

    Chadel, Meriem; Moustafa Bouzaki, Mohammed; Chadel, Asma; Aillerie, Michel; Benyoucef, Boumediene

    2017-07-01

    The influence of the thickness of a Zinc Oxide (ZnO) transparent conductive oxide (TCO) layer on the performance of the CZTSSe solar cell is shown in detail. In a photovoltaic cell, the thickness of each layer largely influence the performance of the solar cell and optimization of each layer constitutes a complete work. Here, using the Solar Cell Capacitance Simulation (SCAPS) software, we present simulation results obtained in the analyze of the influence of the TCO layer thickness on the performance of a CZTSSe solar cell, starting from performance of a CZTSSe solar cell commercialized in 2014 with an initial efficiency equal to 12.6%. In simulation, the temperature was considered as a functioning parameter and the evolution of tthe performance of the cell for various thickness of the TCO layer when the external temperature changes is simulated and discussed. The best efficiency of the solar cell based in CZTSSe is obtained with a ZnO thickness equal to 50 nm and low temperature. Based on the considered marketed cell, we show a technological possible increase of the global efficiency achieving 13% by optimization of ZnO based TCO layer.

  12. Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence

    Science.gov (United States)

    Herz, Andreas; Theska, Felix; Rossberg, Diana; Kups, Thomas; Wang, Dong; Schaaf, Peter

    2018-06-01

    In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 °C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 °C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.

  13. Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

    International Nuclear Information System (INIS)

    Kim, H.; Detavenier, C.; Straten, O. van der; Rossnagel, S.M.; Kellock, A.J.; Park, D.-G.

    2005-01-01

    TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce TaN x thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from TaCl 5

  14. Laminated Amorphous Silicon Neutron Detector (pre-print)

    International Nuclear Information System (INIS)

    McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

    2009-01-01

    An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

  15. Human Chorioretinal Layer Thicknesses Measured in Macula-wide, High-Resolution Histologic Sections

    Science.gov (United States)

    Messinger, Jeffrey D.; Sloan, Kenneth R.; Mitra, Arnab; McGwin, Gerald; Spaide, Richard F.

    2011-01-01

    Purpose. To provide a comprehensive description of chorioretinal layer thicknesses in the normal human macula, including two-layer pairs that can produce a combined signal in some optical coherence tomography (OCT) devices (ganglion cell [GCL] and inner plexiform [IPL] layers and outer plexiform [OPL] and outer nuclear [ONL] layers). Methods. In 0.8-μm-thick, macula-wide sections through the foveola of 18 donors (age range, 40–92 years), 21 layers were measured at 25 locations by a trained observer and validated by a second observer. Tissue volume changes were assessed by comparing total retinal thickness in ex vivo OCT and in sections. Results. Median tissue shrinkage was 14.5% overall and 29% in the fovea. Histologic laminar boundaries resembled those in SD-OCT scans, but the shapes of the foveolar OPL and ONL differed. Histologic GCL, IPL, and OPLHenle were thickest at 0.8. to 1, 1.5, and 0.4 mm eccentricity, respectively. ONL was thickest in an inward bulge at the foveal center. At 1 mm eccentricity, GCL, INL, and OPLHenle represented 17.3% to 21.1%, 18.0% to 18.5%, and 14.2% to 16.6% of total retinal thickness, respectively. In donors ≥70 years of age, the RPE and choroid were 17.1% and 29.6% thinner and OPLHenle was 20.8% thicker than in donors macula were generated. Newer OCT systems can separate GCL from IPL and OPLHenle from ONL, with good agreement for the proportion of retinal thickness occupied by OPLHenle in OCT and histology. The thickening of OPLHenle in older eyes may reflect Müller cell hypertrophy associated with rod loss. PMID:21421869

  16. Formation of nickel germanides from Ni layers with thickness below 10 nm

    Energy Technology Data Exchange (ETDEWEB)

    Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel; Abedin, Ahmad; Hellström, Per-Erik; Östling, Mikael; Jordan-Sweet, Jean; Lavoie, Christian; Zhang, Shi-Li; Zhang, Zhen

    2017-03-01

    The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness

  17. Ultrasound-based measurement of liquid-layer thickness: A novel time-domain approach

    Science.gov (United States)

    Praher, Bernhard; Steinbichler, Georg

    2017-01-01

    Measuring the thickness of a thin liquid layer between two solid materials is important when the adequate separation of metallic parts by a lubricant film (e.g., in bearings or mechanical seals) is to be assessed. The challenge in using ultrasound-based systems for such measurements is that the signal from the liquid layer is a superposition of multiple reflections. We have developed an algorithm for reconstructing this superimposed signal in the time domain. By comparing simulated and measured signals, the time-of-flight of the ultrasonic pulse in a layer can be estimated. With the longitudinal sound velocity known, the layer thickness can then be calculated. In laboratory measurements, we validate successfully (maximum relative error 4.9%) our algorithm for layer thicknesses ranging from 30 μm to 200 μm. Furthermore, we tested our method in the high-temperature environment of polymer processing by measuring the clearance between screw and barrel in the plasticisation unit of an injection moulding machine. The results of such measurements can indicate (i) the wear status of the tribo-mechanical screw-barrel system and (ii) unsuitable process conditions.

  18. Compensation of propagation loss of surface plasmon polaritons with a finite-thickness dielectric gain layer

    International Nuclear Information System (INIS)

    Zhang, Xin; Liu, Haitao; Zhong, Ying

    2012-01-01

    We theoretically study the compensation of propagation loss of surface plasmon polaritons (SPPs) with the use of a finite-thickness dielectric layer with optical gain. The impacts of the gain coefficient, the gain-layer thickness and the wavelength on the loss compensation and the field distribution of the SPP mode are systematically explored with a fully vectorial method. Abnormal behaviors for the loss compensation as the gain-layer thickness increases are found and explained. Critical values of the gain coefficient and of the corresponding gain-layer thickness for just compensating the propagation loss are provided. Our results show that as the SPP propagation loss is fully compensated with a gain coefficient at a reasonably low level, the gain layer is still thin enough to ensure a large exterior SPP field at the gain-layer/air interface, which is important for achieving a strong light–matter interaction for applications such as bio-chemical sensing. (paper)

  19. Irradiation induced crystalline to amorphous transition

    International Nuclear Information System (INIS)

    Bourgoin, J.

    1980-01-01

    Irradiation of a crystalline solid with energetic heavy particles results in cascades of defects which, with increasing dose, overlap and form a continuous disordered layer. In semiconductors the physical properties of such disordered layers are found to be similar to those of amorphous layers produced by evaporation. It is shown in the case of silicon, that the transition from a disordered crystalline (X) layer to an amorphous (α) layer occurs when the Gibbs energy of the X phase and of the defects it contains becomes larger than the Gibbs energy of the α phase. (author)

  20. Achievement report for fiscal 1981 on Sunshine Program research and development. Research and development of amorphous solar cells (Research and development of amorphous solar cells on flexible film substrates); 1981 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Kadosei film wo kiban to suru amorphous taiyo denchi no kenkyu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1982-03-31

    Efforts will be made to reduce the cost, increase efficiency, and enlarge cell areas and, at the same time, to establish the foundation of a roll-up type solar cell manufacturing process which is required for the implementation of mass production. In an inverted pin/ITO (indium-tin oxide) hetero-face structure cell installed on a polymer film substrate, a conversion efficiency of 5.33% is achieved in the case of a solar cell whose n-layer is of the amorphous phase, and 6.36% in the case of a cell of the microcrystallized phase. A roll-up type glow discharge CVD (chemical vapor deposition) unit is designed and experimentally built, which is for the realization of large area cells. It is now duly expected that an undoped (i-type) a-Si:H film will be deposited to a thickness of approximately 5000A. As the result of a first-step screening conducted in search of amorphous solar cell sealing materials, some applicable plastic materials are selected. The future is bright of amorphous solar cells on polymer film substrates. (NEDO)

  1. Scanning laser polarimetry retinal nerve fiber layer thickness measurements after LASIK.

    Science.gov (United States)

    Zangwill, Linda M; Abunto, Teresa; Bowd, Christopher; Angeles, Raymund; Schanzlin, David J; Weinreb, Robert N

    2005-02-01

    To compare retinal nerve fiber layer (RNFL) thickness measurements before and after LASIK. Cohort study. Twenty participants undergoing LASIK and 14 normal controls. Retinal nerve fiber layer thickness was measured before LASIK and approximately 3 months after surgery in one eye each of 20 patients using a scanning laser polarimeter (GDx Nerve Fiber Analyzer) with fixed corneal compensation (FCC), one with variable corneal compensation (GDx VCC), and optical coherence tomography (OCT). Fourteen normal controls also were tested at baseline and approximately 3 months later. Retinal nerve fiber layer thicknesses measured with the GDx FCC, GDx VCC, and OCT. At baseline, mean (95% confidence interval [CI]) RNFL thicknesses for the GDx FCC, GDx VCC, and OCT were 78.1 microm (72.2-83.9), 54.3 microm (52.7-56.0), and 96.8 microm (93.2-100.5), respectively. In both LASIK and control groups, there were no significant changes between baseline and follow-up examinations in GDx VCC and OCT RNFL thickness measurements globally or in the superior and inferior quadrants (mean change, FCC measurements between baseline and follow-up. In LASIK patients, significant reductions were observed in GDx FCC RNFL measurements. Average absolute values of the mean (95% CI) change in thickness were 12.4 microm (7.7-17.2), 15.3 microm (9.6-20.9), and 12.9 microm (7.6-18.1) for GDx FCC RNFL measurements superiorly, inferiorly, and globally, respectively (all Ps FCC RNFL thickness measurements after LASIK is a measurement artifact and is most likely due to erroneous compensation for corneal birefringence. With scanning laser polarimetry, it is mandatory to compensate individually for change in corneal birefringence after LASIK to ensure accurate RNFL assessment.

  2. Hot wire deposited hydrogenated amorphous silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mahan, A.H.; Iwaniczko, E.; Nelson, B.P.; Reedy, R.C. Jr.; Crandall, R.S. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    This paper details the results of a study in which low H content, high deposition rate hot wire (HW) deposited amorphous silicon (a-Si:H) has been incorporated into a substrate solar cell. The authors find that the treatment of the top surface of the HW i layer while it is being cooled from its high deposition temperature is crucial to device performance. They present data concerning these surface treatments, and correlate these treatments with Schottky device performance. The authors also present first generation HW n-i-p solar cell efficiency data, where a glow discharge (GD) {mu}c-Si(p) layer was added to complete the partial devices. No light trapping layer was used to increase the device Jsc. Their preliminary investigations have yielded efficiencies of up to 6.8% for a cell with a 4000 {Angstrom} thick HW i-layer, which degrade less than 10% after a 900 hour light soak. The authors suggest avenues for further improvement of their devices.

  3. Inter-Layer Energy Transfer through Wetting-Layer States in Bi-layer InGaAs/GaAs Quantum-Dot Structures with Thick Barriers

    DEFF Research Database (Denmark)

    Xu, Zhang-Cheng; Zhang, Ya-Ting; Hvam, Jørn Märcher

    2009-01-01

    The inter-layer energy transfer in a bi-layer InGaAs/GaAs quantum dot structure with a thick GaAs barrier is studied using temperature-dependent photoluminescence. The abnormal enhancement of the photoluminescence of the QDs in the layer with a larger amount of coverage at 110K is observed, which...

  4. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Chiang, H-Y. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); Zweifel, T. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany); CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Palancher, H., E-mail: herve.palancher@cea.fr [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Bonnin, A. [ESRF, 6 rue Jules Horowitz, 38042 Grenoble (France); Beck, L. [Tandembeschleuniger des Maier-Leibnitz-Labors (MLL), Am Coulombwall 6, D-85747 Garching (Germany); Weiser, P. [Walther Schottky Institut, Technische Universität München, Am Coulombwall 4, D-85747 Garching (Germany); Döblinger, M. [Department Chemie, Ludwig-Maximilians-Universität München (LMU), Butenandstr. 11, D-81377 München (Germany); Sabathier, C. [CEA, DEN, DEC, F-13108 St. Paul Lez Durance Cedex (France); Jungwirth, R.; Petry, W. [Forschungsneutronenquelle Heinz Maier-Leibniz (FRM II), Technische Universität München Lichtenbergstr. 1, D-85747 Garching (Germany)

    2013-09-15

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ({sup 127}I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation.

  5. Evidence of amorphous interdiffusion layer in heavy ion irradiated U–8wt%Mo/Al interfaces

    International Nuclear Information System (INIS)

    Chiang, H-Y.; Zweifel, T.; Palancher, H.; Bonnin, A.; Beck, L.; Weiser, P.; Döblinger, M.; Sabathier, C.; Jungwirth, R.; Petry, W.

    2013-01-01

    U–Mo/Al based nuclear fuels are worldwide considered as the most promising high density fuel for the conversion of high flux research and test reactors from highly enriched uranium to lower enrichment. However in-pile growth of an amorphous interdiffusion layer at the U–Mo/Al interfaces strongly limits the performances of this fuel. Several in-pile tests have been performed to optimize the composition. In this paper, a breakthrough in simulating the U–8wt%Mo/Al behavior under out-of-pile irradiation is reported. It is shown that an amorphous U–8wt%Mo/Al interdiffusion layer (IDL) is obtained by heavy ion irradiation ( 127 I) in a U–Mo/Al diffusion couple under controlled temperature conditions. The properties of this IDL coincide with the results obtained from in-pile tests. This methodological work clearly indicates that heavy ion irradiations could be routinely applied for optimizing composition of U–Mo/Al nuclear fuels. In other words these out-of-pile tests using ion beams could become a representative, efficient and economic step before in-pile irradiation

  6. Temperature dependence of magnetically dead layers in ferromagnetic thin-films

    Directory of Open Access Journals (Sweden)

    M. Tokaç

    2017-11-01

    Full Text Available Polarized neutron reflectometry has been used to study interface magnetism and magnetic dead layers in model amorphous CoFeB:Ta alloy thin-film multilayers with Curie temperatures tuned to be below room-temperature. This allows temperature dependent variations in the effective magnetic thickness of the film to be determined at temperatures that are a significant fraction of the Curie temperature, which cannot be achieved in the material systems used for spintronic devices. In addition to variation in the effective magnetic thickness due to compositional grading at the interface with the tantalum capping layer, the key finding is that at the interface between ferromagnetic film and GaAs(001 substrate local interfacial alloying creates an additional magnetic dead-layer. The thickness of this magnetic dead-layer is temperature dependent, which may have significant implications for elevated-temperature operation of hybrid ferromagnetic metal-semiconductor spintronic devices.

  7. Hydrodynamic thickness of petroleum oil adsorbed layers in the pores of reservoir rocks.

    Science.gov (United States)

    Alkafeef, Saad F; Algharaib, Meshal K; Alajmi, Abdullah F

    2006-06-01

    The hydrodynamic thickness delta of adsorbed petroleum (crude) oil layers into the pores of sandstone rocks, through which the liquid flows, has been studied by Poiseuille's flow law and the evolution of (electrical) streaming current. The adsorption of petroleum oil is accompanied by a numerical reduction in the (negative) surface potential of the pore walls, eventually stabilizing at a small positive potential, attributed to the oil macromolecules themselves. After increasing to around 30% of the pore radius, the adsorbed layer thickness delta stopped growing either with time or with concentrations of asphaltene in the flowing liquid. The adsorption thickness is confirmed with the blockage value of the rock pores' area determined by the combination of streaming current and streaming potential measurements. This behavior is attributed to the effect on the disjoining pressure across the adsorbed layer, as described by Derjaguin and Churaev, of which the polymolecular adsorption films lose their stability long before their thickness has approached the radius of the rock pore.

  8. The measurement of layer thickness by the deconvolution of ultrasonic signals

    International Nuclear Information System (INIS)

    McIntyre, P.J.

    1977-07-01

    An ultrasonic technique for measuring layer thickness, such as oxide on corroded steel, is described. A time domain response function is extracted from an ultrasonic signal reflected from the layered system. This signal is the convolution of the input signal with the response function of the layer. By using a signal reflected from a non-layered surface to represent the input, the response function may be obtained by deconvolution. The advantage of this technique over that described by Haines and Bel (1975) is that the quality of the results obtained using their method depends on the ability of a skilled operator in lining up an arbitrary common feature of the signals received. Using deconvolution no operator manipulations are necessary and so less highly trained personnel may successfully make the measurements. Results are presented for layers of araldite on aluminium and magnetite of steel. The results agreed satisfactorily with predictions but in the case of magnetite, its high velocity of sound meant that thicknesses of less than 250 microns were difficult to measure accurately. (author)

  9. Photoacoustic signal attenuation analysis for the assessment of thin layers thickness in paintings

    Science.gov (United States)

    Tserevelakis, George J.; Dal Fovo, Alice; Melessanaki, Krystalia; Fontana, Raffaella; Zacharakis, Giannis

    2018-03-01

    This study introduces a novel method for the thickness estimation of thin paint layers in works of art, based on photoacoustic signal attenuation analysis (PAcSAA). Ad hoc designed samples with acrylic paint layers (Primary Red Magenta, Cadmium Yellow, Ultramarine Blue) of various thicknesses on glass substrates were realized for the specific application. After characterization by Optical Coherence Tomography imaging, samples were irradiated at the back side using low energy nanosecond laser pulses of 532 nm wavelength. Photoacoustic waves undergo a frequency-dependent exponential attenuation through the paint layer, before being detected by a broadband ultrasonic transducer. Frequency analysis of the recorded time-domain signals allows for the estimation of the average transmitted frequency function, which shows an exponential decay with the layer thickness. Ultrasonic attenuation models were obtained for each pigment and used to fit the data acquired on an inhomogeneous painted mock-up simulating a real canvas painting. Thickness evaluation through PAcSAA resulted in excellent agreement with cross-section analysis with a conventional brightfield microscope. The results of the current study demonstrate the potential of the proposed PAcSAA method for the non-destructive stratigraphic analysis of painted artworks.

  10. Influence of strain on the growth of thick InGaN layers

    International Nuclear Information System (INIS)

    Stellmach, J.; Leyer, M.; Pristovsek, M.; Kneissl, M.

    2008-01-01

    The growth of high quality InGaN alloys is critical for a number of various optoelectronic device applications like LEDs and laser diodes. Nevertheless, the exact growth mechanisms of InGaN with high indium content is still not fully understood. In the present study the growth of thick InGaN layers was systematically investigated. InGaN films with thicknesses between ∝35 nm and ∝200 nm were grown on GaN templates with metal-organic vapour phase epitaxy (MOVPE). The group III partial pressures of 1.1 Pa for TMGa, 0.45 Pa for TMIn and the V/III-ratio of 1600 were kept constant. The growth temperature was varied between 750 C and 800 C. The growth of InGaN layer was characterized by in-situ spectroscopic ellipsometry (SE). Up to temperatures of 790 C structural analysis by XRD showed two strained layers with different indium content. The formation of the layer structure was investigated by varying the growth times at 770 C. In the first 500 s (35 nm) a rough (rms=9 nm) and pseudomorphically strained InGaN layer with low indium content (4%) is formed. Between 500 s and 1000 s this strained layer becomes smoother (rms=3.4 nm). For thicknesses beyond the In content increases (8% at 84 nm) and reaches 11% at 200 nm. We propose that the transition from a first layer with a low indium content to a second layer with an higher indium content is due to a gradual release of strain

  11. Leaping shampoo glides on a 500-nm-thick lubricating air layer

    Science.gov (United States)

    Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

    2013-11-01

    When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

  12. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    International Nuclear Information System (INIS)

    Rosikhin, Ahmad; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto

    2015-01-01

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO 2 in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO 2 layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices

  13. Enhanced photocurrent density in graphene/Si based solar cell (GSSC) by optimizing active layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Rosikhin, Ahmad, E-mail: a.rosikhin86@yahoo.co.id; Hidayat, Aulia Fikri; Syuhada, Ibnu; Winata, Toto, E-mail: toto@fi.itb.ac.id [Department of physics, physics of electronic materials research division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jl. Ganesha 10, Bandung 40132, Jawa Barat – Indonesia (Indonesia)

    2015-12-29

    Thickness dependent photocurrent density in active layer of graphene/Si based solar cell has been investigated via analytical – simulation study. This report is a preliminary comparison of experimental and analytical investigation of graphene/Si based solar cell. Graphene sheet was interfaced with Si thin film forming heterojunction solar cell that was treated as a device model for photocurrent generator. Such current can be enhanced by optimizing active layer thickness and involving metal oxide as supporting layer to shift photons absorption. In this case there are two type of devices model with and without TiO{sub 2} in which the silicon thickness varied at 20 – 100 nm. All of them have examined and also compared with each other to obtain an optimum value. From this calculation it found that generated currents almost linear with thickness but there are saturated conditions that no more enhancements will be achieved. Furthermore TiO{sub 2} layer is effectively increases photon absorption but reducing device stability, maximum current is fluctuates enough. This may caused by the disturbance of excitons diffusion and resistivity inside each layer. Finally by controlling active layer thickness, it is quite useful to estimate optimization in order to develop the next solar cell devices.

  14. Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

    International Nuclear Information System (INIS)

    Gao, Xu; Mao, Bao-Hua; Wang, Sui-Dong; Lin, Meng-Fang; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Tsukagoshi, Kazuhito; Nabatame, Toshihide; Liu, Zhi

    2017-01-01

    Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O 2 /air. The device with a thick IGZO layer shows similar electron mobility in O 2 /air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O 2 /air due to the electron transfer to adsorbed gas molecules. The O 2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results. (paper)

  15. Thickness dependence of magnetic anisotropy and domains in amorphous Co{sub 40}Fe{sub 40}B{sub 20} thin films grown on PET flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenhua, E-mail: tangzhenhua1988@163.com [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Ni, Hao [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); College of science, China university of petroleum, Qingdao, Shandong 266580 China (China); Lu, Biao [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Zheng, Ming [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Huang, Yong-An [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Lu, Sheng-Guo, E-mail: sglu@gdut.edu.cn [Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006 (China); Tang, Minghua [Key Laboratory of Low Dimensional Materials and Application Technology, Ministry of Education (Xiangtan University), Xiangtan, Hunan 411105 (China); Gao, Ju [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China)

    2017-03-15

    The amorphous Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) films (5–200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film. - Graphical abstract: The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of ~150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. - Highlights: • The thickness effect on the magnetic properties in amorphous CoFeB thin films grown on flexible substrates was investigated. • The in-plane uniaxial magnetic anisotropy induced by strains was observed. • A critical thickness of ~ 150 nm for the flexible CoFeB thin film on PET substrate was obtained.

  16. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

  17. Localization in superlattices with randomness in layer thickness

    International Nuclear Information System (INIS)

    Yuan Jian; Tsai Chienhua.

    1987-08-01

    The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

  18. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

    International Nuclear Information System (INIS)

    Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

    2014-01-01

    Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

  19. On determining dead layer and detector thicknesses for a position-sensitive silicon detector

    Science.gov (United States)

    Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

    2018-04-01

    In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

  20. Intermediate layer thickness dependence on switching field distribution in perpendicular recording media

    International Nuclear Information System (INIS)

    Sbiaa, R.; Gandhi, R.; Srinivasan, K.; Piramanayagam, S.N.; Seoh, R.M.

    2009-01-01

    The effect of intermediate layer (IL) thickness on crystallographic texture and magnetic properties of CoCrPtSiO 2 granular perpendicular recording media was investigated with switching field distribution (SFD) as the focus. Even though the c-axis orientation of the Co-based recording layer (RL) broadens with the reduction of IL thickness, the SFD becomes narrower. This result demonstrates that the intrinsic SFD is not directly dependent on c-axis orientation of the recording layer but instead dependent on the magnitude of exchange coupling. It is thus possible to have a medium with thin IL and narrow SFD. This is desirable for bit-patterned media (BPM), where highly exchange-coupled grains are required.

  1. Solid-State Electrochromic Device Consisting of Amorphous WO3 and Various Thin Oxide Layers

    Science.gov (United States)

    Shizukuishi, Makoto; Shimizu, Isamu; Inoue, Eiichi

    1980-11-01

    A mixed oxide containing Cr2O3 was introduced into an amorphous WO3 solid-state electrochromic device (ECD) in order to improve its colour memory effect. The electrochromic characteristics were greatly affected by the chemical constituents of a dielectric layer on the a-WO3 layer. Particularly, long memory effect and low power dissipation were attained in a solid-state ECD consisting of a-WO3 and Cr2O3\\cdotV2O5(50 wt.%). Some electrochromic characteristics of the a-WO3/Cr2O3\\cdotV2O5 ECD and the role of V2O5 were investigated.

  2. Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

    International Nuclear Information System (INIS)

    Sun, R.X.; Zheng, J.; Liao, X.L.; Che, T.; Gou, Y.F.; He, D.B.; Deng, Z.G.

    2014-01-01

    Highlights: • Thickness optimization of double-layer bulk HTSC arrangement is studied. • The new bulk HTSC arrangement makes better use of the flux distribution of the magnetic rails. • Levitation performance can be enhanced with the optimization. • The optimization can meet large levitation force requirements for HTS Maglev system. - Abstract: A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems

  3. Thickness dependence of the levitation performance of double-layer high-temperature superconductor bulks above a magnetic rail

    Energy Technology Data Exchange (ETDEWEB)

    Sun, R.X.; Zheng, J.; Liao, X.L.; Che, T.; Gou, Y.F.; He, D.B.; Deng, Z.G., E-mail: zgdeng@gmail.com

    2014-10-15

    Highlights: • Thickness optimization of double-layer bulk HTSC arrangement is studied. • The new bulk HTSC arrangement makes better use of the flux distribution of the magnetic rails. • Levitation performance can be enhanced with the optimization. • The optimization can meet large levitation force requirements for HTS Maglev system. - Abstract: A double-layer high-temperature superconductor (HTSC) arrangement was proposed and proved to be able to bring improvements to both levitation force and guidance force compared with present single-layer HTSC arrangement. To fully exploit the applied magnetic field by a magnetic rail, the thickness dependence of a double-layer HTSC arrangement on the levitation performance was further investigated in the paper. In this study, the lower-layer bulk was polished step by step to different thicknesses, and the upper-layer bulk with constant thickness was directly superimposed on the lower-layer one. The levitation force and the force relaxation of the double-layer HTSC arrangement were measured above a Halbach magnetic rail. Experimental result shows that a bigger levitation force and a less levitation force decay could be achieved by optimizing the thickness of the lower-layer bulk HTSC. This thickness optimization method could be applied together with former reported double-layer HTSC arrangement method with aligned growth sector boundaries pattern. This series of study on the optimized combination method do bring a significant improvement on the levitation performance of present HTS maglev systems.

  4. Thickness and composition of ultrathin SiO2 layers on Si

    NARCIS (Netherlands)

    van der Marel, C; Verheijen, M.A.; Tamminga, Y; Pijnenburg, RHW; Tombros, N; Cubaynes, F

    2004-01-01

    Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it

  5. Production of amorphous metal layers using ion implantation and investigation of the related modification of some surface properties

    International Nuclear Information System (INIS)

    Hoang Dac Luc; Vu Hoang Lam.

    1993-01-01

    Amorphous layers were produced by implanting B + ions into Al at 50 keV. The modification of the electrochemical corrosion resistance and the mechanical strength of implanted specimen was investigated. (author). 2 refs, 1 tab, 2 figs

  6. Exchange bias variations of the seed and top NiFe layers in NiFe/FeMn/NiFe trilayer as a function of seed layer thickness

    International Nuclear Information System (INIS)

    Sankaranarayanan, V.K.; Yoon, S.M.; Kim, C.G.; Kim, C.O.

    2005-01-01

    Development of exchange bias at the seed and top NiFe layers in the NiFe (t nm)/FeMn(10 nm)/NiFe(5 nm) trilayer structure is investigated as a function of seed layer thickness, in the range of 2-20 nm. The seed NiFe layer shows maximum exchange bias at 4 nm seed layer thickness. The bias shows inverse thickness dependence with increasing thickness. The top NiFe layer on the other hand shows only half the bias of the seed layer which is retained even after the sharp fall in seed layer bias. The much smaller bias for the top NiFe layer is related to the difference in crystalline texture and spin orientations at the top FeMn/NiFe interface, in comparison to the bottom NiFe/FeMn interface which grows on a saturated NiFe layer with (1 1 1) orientation

  7. Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers

    CERN Document Server

    Nohavica, D; Zdansky, K

    1999-01-01

    We report on liquid-phase epitaxial growth of thick layers of GaInP(As), lattice matched to GaAs. Layers with thicknesses up to 10 mu m were prepared in a multi-melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials, show a significant decrease in the residual impurity level when erbium is added to the melt. Fundamental electrical and optical properties of the layers were investigated. (author)

  8. Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

    International Nuclear Information System (INIS)

    Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

    1998-01-01

    Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

  9. Ballistic Phonon Penetration Depth in Amorphous Silicon Dioxide.

    Science.gov (United States)

    Yang, Lin; Zhang, Qian; Cui, Zhiguang; Gerboth, Matthew; Zhao, Yang; Xu, Terry T; Walker, D Greg; Li, Deyu

    2017-12-13

    Thermal transport in amorphous silicon dioxide (a-SiO 2 ) is traditionally treated as random walks of vibrations owing to its greatly disordered structure, which results in a mean free path (MFP) approximately the same as the interatomic distance. However, this picture has been debated constantly and in view of the ubiquitous existence of thin a-SiO 2 layers in nanoelectronic devices, it is imperative to better understand this issue for precise thermal management of electronic devices. Different from the commonly used cross-plane measurement approaches, here we report on a study that explores the in-plane thermal conductivity of double silicon nanoribbons with a layer of a-SiO 2 sandwiched in-between. Through comparing the thermal conductivity of the double ribbon samples with that of corresponding single ribbons, we show that thermal phonons can ballistically penetrate through a-SiO 2 of up to 5 nm thick even at room temperature. Comprehensive examination of double ribbon samples with various oxide layer thicknesses and van der Waals bonding strengths allows for extraction of the average ballistic phonon penetration depth in a-SiO 2 . With solid experimental data demonstrating ballistic phonon transport through a-SiO 2 , this work should provide important insight into thermal management of electronic devices.

  10. Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

    Science.gov (United States)

    Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

    2018-06-01

    The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

  11. Measurement of oxide-layer thickness of internal granules in high-purity aluminium

    International Nuclear Information System (INIS)

    Takacs, S.; Ditroi, F.; Mahunka, I.

    1989-01-01

    Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

  12. Evaluation of the Thickness and Oxygen Transmission Rate before and after Thermoforming Mono- and Multi-layer Sheets into Trays with Variable Depth

    Directory of Open Access Journals (Sweden)

    Mieke Buntinx

    2014-12-01

    Full Text Available During thermoforming, plastic sheets are heated and subsequently deformed through the application of mechanical stretching and/or pressure. This process directly impacts sheet properties such as material thickness in walls, corners, and bottom, crystallinity in the constituent layers, and particularly the oxygen gas permeability. The aim of this study was to quantify the impact of thermoforming on thickness and oxygen transmission rate (OTR of selected packaging materials (polypropylene (PP; PP/ethylene-vinyl alcohol co-polymer/PP (PP/EVOH/PP; polystyrene/EVOH/polyethylene (PS/EVOH/PE; amorphous polyethylene terephtalate/PE (APET/PE; APET/PE/EVOH/PE; polyamide/PE (PA/PE; and (PE/PA/EVOH/PA/PE. These materials were extruded in two different thicknesses and thermoformed into trays with the same top dimensions and variable depths of 25, 50, and/or 75 mm and a 50 mm tray with a variable radius of the corners. The distribution of the material thickness in the trays was visualized, showing the locations that were most affected by the deep drawn process. The OTR results indicate that the calculated OTR, based on a homogeneous material distribution, can be used as a rough approximation of the measured OTR. However, detailed analysis of crystallization and unequal thinning, which is also related to the tray design, remains necessary to explain the deviation of the measured OTR as compared to the predicted one.

  13. Modeling of X-ray rocking curves for layers after two-stage ion-implantation

    Directory of Open Access Journals (Sweden)

    O.I. Liubchenko

    2017-10-01

    Full Text Available In this work, we consider the approach for simulation of X-ray rocking curves inherent to InSb(111 crystals implanted with Be+ ions with various energies and doses. The method is based on the semi-kinematical theory of X-ray diffraction in the case of Bragg geometry. A fitting procedure that relies on the Hooke–Jeeves direct search algorithm was developed to determine the depth profiles of strain and structural disorders in the ion-modified layers. The thickness and maximum value of strain of ion-modified InSb(111 layers were determined. For implantation energies 66 and 80 keV, doses 25 and 50 µC, the thickness of the strained layer is about 500 nm with the maximum value of strain close to 0.1%. Additionally, an amorphous layer with significant thickness was found in the implantation region.

  14. Amorphous Tin Oxide as a Low-Temperature-Processed Electron-Transport Layer for Organic and Hybrid Perovskite Solar Cells

    KAUST Repository

    Barbe, Jeremy; Tietze, Max Lutz; Neophytou, Marios; Banavoth, Murali; Alarousu, Erkki; El Labban, Abdulrahman; Abulikemu, Mutalifu; Yue, Wan; Mohammed, Omar F.; McCulloch, Iain; Amassian, Aram; Del Gobbo, Silvano

    2017-01-01

    Chemical bath deposition (CBD) of tin oxide (SnO) thin films as an electron-transport layer (ETL) in a planar-heterojunction n-i-p organohalide lead perovskite and organic bulk-heterojunction (BHJ) solar cells is reported. The amorphous SnO (a

  15. Crystallization of AlON layers and its effects on the microstructure and hardness of reactively synthesized ZrN/AlON nanomultilayers

    Energy Technology Data Exchange (ETDEWEB)

    Dong Yunshan; Yue Jianling; Liu Yan; Li Geyang [State Key Lab of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200030 (China)

    2006-11-21

    By reactively sputtering Zr and Al{sub 2}O{sub 3} targets in a gaseous mixture of Ar and N{sub 2}, ZrN/AlON nanomultilayers were synthesized to study the crystallization conditions for AlON layers and how they influence the characteristics of multilayers. The composition analysis indicated that some of the oxygen atoms were replaced by nitrogen atoms in Al{sub 2}O{sub 3}, leading to the formation of aluminium oxynitride, AlON, during the procedure of the Al{sub 2}O{sub 3} target being sputtered in the gaseous mixture. Further investigations showed that when their thickness was limited to less than 1 nm, amorphous AlON layers were crystallized under the template effects of crystalline ZrN layers, and then coherent interfaces formed as a result. Correspondingly, the multilayers were remarkably strengthened with hardness approaching a maximum of 33 GPa. After the layer thickness of AlON exceeded the critical value of 1 nm, the subsequently deposited AlON grew amorphously and blocked the epitaxial growth of multilayers, accompanied by the decline of hardness. Yet, on the other hand, the integrated hardness of multilayers was not sensitive to the thickness of the ZrN template layers and its value was maintained a bit higher than 30 GPa in a wide range of ZrN layer thickness variations.

  16. Optoelectric Properties of GaInP p-i-n Solar Cells with Different i-Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Tsung-Shine Ko

    2015-01-01

    Full Text Available The optoelectric properties of GaInP p-i-n solar cells with different intrinsic layer (i-layer thicknesses from 0.25 to 1 μm were studied. Both emission intensity and full width at half maximum features of the photoluminescence spectrum indicate that the optimum i-layer thickness would be between 0.5 and 0.75 μm. The integrated current results of photocurrent experiment also point out that the samples with 0.5 to 0.75 μm i-layer thicknesses have optimum value around 156 nA. Electroreflectance measurements reveal that the built-in electric field strength of the sample gradually deviates from the theoretical value larger when i-layer thickness of the sample is thicker than 0.75 μm. I-V measurements also confirm crystal quality for whole samples by obtaining the information about short currents of photovoltaic performances. A series of experiments reflect that thicker i-layer structure would induce more defects generation lowering crystal quality.

  17. Thin and thick layers of resin-based sealer cement bonded to root dentine compared: Adhesive behaviour.

    Science.gov (United States)

    Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

    2015-12-01

    This study aims to evaluate tensile and shear bond strengths of one epoxy (AH) and two methacrylate resin-based sealers (EZ and RS) in thin and thick layers bonded to root dentine. An alignment device was prepared for accurate positioning of 20 root dentine cylinders in a predefined gap of 0.1 or 1 mm. Sealer was placed in the interface. Bond strength tests were conducted. Mode of failures and representative surfaces were evaluated. Data were analysed using anova and post-hoc tests, with P thick layer of sealer produced higher bond strength, except for the shear bond strength of EZ. Significant differences between thin and thick layers were found only in tensile bond strengths of AH and RS. Mixed type of failure was constantly found with all sealers. Bond strengths of thick layers of resin-based sealers to root dentine tended to be higher than with thin layers. © 2015 Australian Society of Endodontology.

  18. Impact of thickness on the structural properties of high tin content GeSn layers

    Science.gov (United States)

    Aubin, J.; Hartmann, J. M.; Gassenq, A.; Milord, L.; Pauc, N.; Reboud, V.; Calvo, V.

    2017-09-01

    We have grown various thicknesses of GeSn layers in a 200 mm industrial Reduced Pressure - Chemical Vapor Deposition cluster tool using digermane (Ge2H6) and tin tetrachloride (SnCl4). The growth pressure (100 Torr) and the F(Ge2H6)/F(SnCl4) mass-flow ratio were kept constant, and incorporation of tin in the range of 10-15% was achieved with a reduction in temperature: 325 °C for 10% to 301 °C for 15% of Sn. The layers were grown on 2.5 μm thick Ge Strain Relaxed Buffers, themselves on Si(0 0 1) substrates. We used X-ray Diffraction, Atomic Force Microscopy, Raman spectroscopy and Scanning Electron Microscopy to measure the Sn concentration, the strain state, the surface roughness and thickness as a function of growth duration. A dramatic degradation of the film was seen when the Sn concentration and layer thickness were too high resulting in rough/milky surfaces and significant Sn segregation.

  19. Retina ganglion cell/inner plexiform layer and peripapillary nerve fiber layer thickness in patients with acromegaly.

    Science.gov (United States)

    Şahin, Muhammed; Şahin, Alparslan; Kılınç, Faruk; Yüksel, Harun; Özkurt, Zeynep Gürsel; Türkcü, Fatih Mehmet; Pekkolay, Zafer; Soylu, Hikmet; Çaça, İhsan

    2017-06-01

    Increased secretion of growth hormone and insulin-like growth factor-1 in acromegaly has various effects on multiple organs. However, the ocular effects of acromegaly have yet to be investigated in detail. The aim of the present study was to compare retina ganglion cell/inner plexiform layer (GCIPL) and peripapillary nerve fiber layer thickness (pRNFL) between patients with acromegaly and healthy control subjects using spectral domain optical coherence tomography (SD-OCT). This cross-sectional, comparative study included 18 patients with acromegaly and 20 control subjects. All participants underwent SD-OCT to measure pRNFL (in the seven peripapillary areas), GCIPL (in the nine ETDRS areas), and central macular thickness (CMT). Visual field (VF) examinations were performed using a Humphrey field analyzer in acromegalic patients. Measurements were compared between patients with acromegaly and control subjects. A total of 33 eyes of 18 patients with acromegaly and 40 eyes of 20 control subjects met the inclusion criteria of the present study. The overall calculated average pRNFL thickness was significantly lower in patients with acromegaly than in control subjects (P = 0.01), with pRNFL thickness significantly lower in the temporal superior and temporal inferior quadrants. Contrary to our expectations, pRNFL thickness in the nasal quadrant was similar between acromegalic and control subjects. The mean overall pRNFL thickness and superonasal, nasal, inferonasal, and inferotemporal quadrant pRNFL thicknesses were found to correlate with the mean deviation (MD) according to Spearman's correlation. However, other quadrants were not correlated with VF sensitivity. No significant difference in CMT values was observed (P = 0.6). GCIPL thickness was significantly lower in all quadrants of the inner and outer macula, except for central and inferior outer quadrants, in the acromegaly group than that in the control group (P acromegaly compared with that in control subjects

  20. Surface-enhanced Raman scattering of amorphous silica gel adsorbed on gold substrates for optical fiber sensors

    Science.gov (United States)

    Degioanni, S.; Jurdyc, A. M.; Cheap, A.; Champagnon, B.; Bessueille, F.; Coulm, J.; Bois, L.; Vouagner, D.

    2015-10-01

    Two kinds of gold substrates are used to produce surface-enhanced Raman scattering (SERS) of amorphous silica obtained via the sol-gel route using tetraethoxysilane Si(OC2H5)4 (TEOS) solution. The first substrate consists of a gold nanometric film elaborated on a glass slide by sputter deposition, controlling the desired gold thickness and sputtering current intensity. The second substrate consists of an array of micrometer-sized gold inverted pyramidal pits able to confine surface plasmon (SP) enhancing electric field, which results in a distribution of electromagnetic energy inside the cavities. These substrates are optically characterized to observe SPR with, respectively, extinction and reflectance spectrometries. Once coated with thin layers of amorphous silica (SiO2) gel, these samples show Raman amplification of amorphous SiO2 bands. This enhancement can occur in SERS sensors using amorphous SiO2 gel as shells, spacers, protective coatings, or waveguides, and represents particularly a potential interest in the field of Raman distributed sensors, which use the amorphous SiO2 core of optical fibers as a transducer to make temperature measurements.

  1. Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction

    Energy Technology Data Exchange (ETDEWEB)

    Fong, S. W., E-mail: swfong@stanford.edu; Wong, H.-S. P. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Sood, A. [Department of Material Science and Engineering, Stanford University, Stanford, California 94305 (United States); Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States); Chen, L. [School of Energy and Power Engineering, Xi' an Jiatong University, Xi' an, Shaanxi 710049 (China); Kumari, N.; Gibson, G. A. [Hewlett-Packard Labs, 1501 Page Mill Rd., Palo Alto, California 94304 (United States); Asheghi, M.; Goodson, K. E. [Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States)

    2016-07-07

    In this work, we investigate the temperature-dependent thermal conductivities of few nanometer thick alternating stacks of amorphous dielectrics, specifically SiO{sub 2}/Al{sub 2}O{sub 3} and SiO{sub 2}/Si{sub 3}N{sub 4}. Experiments using steady-state Joule-heating and electrical thermometry, while using a micro-miniature refrigerator over a wide temperature range (100–500 K), show that amorphous thin-film multilayer SiO{sub 2}/Si{sub 3}N{sub 4} and SiO{sub 2}/Al{sub 2}O{sub 3} exhibit through-plane room temperature effective thermal conductivities of about 1.14 and 0.48 W/(m × K), respectively. In the case of SiO{sub 2}/Al{sub 2}O{sub 3}, the reduced conductivity is attributed to lowered film density (7.03 → 5.44 × 10{sup 28 }m{sup –3} for SiO{sub 2} and 10.2 → 8.27 × 10{sup 28 }m{sup –3} for Al{sub 2}O{sub 3}) caused by atomic layer deposition of thin-films as well as a small, finite, and repeating thermal boundary resistance (TBR) of 1.5 m{sup 2} K/GW between dielectric layers. Molecular dynamics simulations reveal that vibrational mismatch between amorphous oxide layers is small, and that the TBR between layers is largely due to imperfect interfaces. Finally, the impact of using this multilayer dielectric in a dash-type phase-change memory device is studied using finite-element simulations.

  2. HYBRID LAYER THICKNESS IN PRIMARY AND PERMANENT TEETH – A COMPARISON BETWEEN TOTAL ETCH ADHESIVES

    Directory of Open Access Journals (Sweden)

    Natalia Gateva

    2012-05-01

    Full Text Available Purpose: The aim this study is to compare the hybrid layer thickness and its micromorphological characteristics in samples from primary and permanent teeth following application of total etch adhesives.Materials and methods: On intact specimens of 20 primary and 10 permanent teeth was created flat dentin surfaces. The patterns were divided in 6 groups. Two different total etch adhesive systems were used – one tree steps (OptiBond, Kerr and one two steps (Exite, VivaDent. In groups 3, 4, 5 and 6 recommended etching time was used - 15 s, in groups 1 and 2 the etching time was reduced to 7 s. After applying the adhesive, resin composite build-ups were constructed. Thus restored samples are stored in saline solution for 24 hours at temperature 37 C. Then they are subjected to thermal stress in temperature between 5 C to 55 C for 1,500 cycles and to masticatory stress – 150,000 cycles with force 100 N in intervals of 0.4 s. After that the teeth are cut through the middle in medio-distal direction with a diamond disc. SEM observation was done to investigate the thickness of the hybrid layer and the presence of microgaps. Statistical analysis was performed with ANOVA and Tukey׳s tests.Results: SEM observation showed significant differences of the hybrid layer thickness between primary and permanent teeth under equal conditions and after different etching time. Group 6 presented the highest average thickness 8.85 μ and group 1 the lowest average in hybrid layer 3.74 μ.Conclusion: In primary teeth the hybrid layer thickness increases with the increased etching time. The hybrid layer thickness in primary teeth is greater than that of the hybrid layer in permanent teeth under equal conditions. For primary teeth it is more appropriate to reduce the etching time to 7s to obtain a hybrid layer with better quality

  3. Indirect involvement of armorphous carbon layer on convective heat transfer enhancement using carbon nanofibers

    NARCIS (Netherlands)

    Taha, T.J.; Lefferts, Leonardus; van der Meer, Theodorus H.

    2015-01-01

    In this work, an experimental heat transfer investigation was carried out to investigate the combined influence of both amorphous carbon (a-C) layer thickness and carbon nanofibers (CNFs) on the convective heat transfer behavior. Synthesis of these carbon nanostructures was achieved using catalytic

  4. The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots

    Science.gov (United States)

    Mok, Tat M.; O'Leary, Stephen K.

    2007-12-01

    Using a model for the optical spectrum associated with hydrogenated amorphous silicon, explicitly taking into account fundamental experimental limitations encountered, we theoretically determine the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film. We compare these results with that obtained from experiment. We find that the curvature in the Tauc plot plays a significant role in influencing the determination of the Tauc optical gap associated with hydrogenated amorphous silicon, thus affirming an earlier hypothesis of Cody et al. We also find that the spectral dependence of the refractive index plays an important role in influencing the determination of the Cody optical gap. It is thus clear that care must be exercised when drawing conclusions from the dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the thickness of the film.

  5. Clinical analysis of retinal nerve fiber layer thickness and macular fovea in hyperopia children with anisometropia amblyopia

    Directory of Open Access Journals (Sweden)

    Fei-Fei Li

    2017-10-01

    Full Text Available AIM:To analyze the clinical significance of axial length, diopter and retinal nerve fiber layer thickness in hyperopia children with anisometropia amblyopia. METHODS: From January 2015 to January 2017 in our hospital for treatment, 103 cases, all unilateral, were diagnosed as hyperopia anisometropia amblyopia. The eyes with amblyopia were as experimental group(103 eyes, another normal eye as control group(103 eyes. We took the detection with axial length, refraction, foveal thickness, corrected visual acuity, diopter and the average thickness of retinal nerve fiber layer. RESULTS: Differences in axial length and diopter and corrected visual acuity were statistically significant between the two groups(PP>0.05. There was statistical significance difference on the foveal thickness(PP>0.05. The positive correlation between diopter with nerve fiber layer thickness of foveal and around the optic disc were no statistically significant difference(P>0.05. CONCLUSION: Retinal thickness of the fovea in the eye with hyperopic anisometropia amblyopia were thicker than those in normal eyes; the nerve fiber layer of around the optic disc was not significantly different between the amblyopic eyes and contralateral eyes. The refraction and axial length had no significant correlation with optic nerve fiber layer and macular foveal thickness.

  6. Changes in the relative thickness of individual subcutaneous adipose tissue layers in growing pigs

    DEFF Research Database (Denmark)

    McEvoy, Fintan; Strathe, Anders Bjerring; Madsen, Mads T.

    2007-01-01

    change in body weight in normal growing pigs. Methods: A group of nine pigs was examined using 14 MHz linear array transducer on three A group of nine pigs was examined using 14 MHz linear array transducer on three separate occasions. The average weight was 51, 94 and 124 kg for each successive scan...... longevity and finally to assist in the calculation of payments to producers that allow for general adiposity. Currently for reasons of tradition and ease, total adipose thickness measurements are made at one or multiple sites although it has been long recognized that up to three well defined layers (outer...... (L1), middle (L2), and inner (L3)) may be present to make up the total. Various features and properties of these layers have been described. This paper examines the contribution of each layer to total adipose thickness at three time points and describes the change in thickness of each layer per unit...

  7. Effects of particles thickness and veneer reiforced layer in the properties of oriented strand boards OSB

    Directory of Open Access Journals (Sweden)

    Setsuo Iwakiri

    2009-03-01

    Full Text Available This work evaluated the effects of particle thickness and veneer reinforced layer on the physical and mechanicalproperties of OSB made of Pinus taeda L. The boards were manufactured with particle thickness of 0.4, 0.7 and 1.0 mm and phenolformaldehyderesin in the proportion of 6% of solid content. To the veneer reinforced layer was used veneer from Pinus taeda with 2.0mm of thickness. The increase in the slenderness (length/thickness ratio of thins particles, results in the higher values of MOE andMOR in the cross direction. The increase in the particles thickness contributed to higher values of the board internal bond. Thedifferent particles thickness did not clearly affected on the physical properties of OSB. The veneer reinforced layer results in the higheraverage values of MOE and MOR in the cross direction. All of the results of MOE and MOR obtained for boards with differentthickness attend tominimum values required per CSA 0437 (CSA, 1993. For the internal bond, the results were satisfactory to boardsmanufactured with particles thickness of 0.7 and 1.0 mm. According to the results the main conclusions were: (i The increase in theparticles thickness contributed to lower values of MOE and MOR, and higher values of the board internal bond; (ii the veneerreinforced layer increased MOE and MOR values in the cross direction.

  8. Performance Analysis of GaN Capping Layer Thickness on GaN/AlGaN/GaN High Electron Mobility Transistors.

    Science.gov (United States)

    Sharma, N; Periasamy, C; Chaturvedi, N

    2018-07-01

    In this paper, we present an investigation of the impact of GaN capping layer and AlGaN layer thickness on the two-dimensional (2D)-electron mobility and the carrier concentration which was formed close to the AlGaN/GaN buffer layer for Al0.25Ga0.75N/GaN and GaN/Al0.25Ga0.75N/GaN heterostructures deposited on sapphire substrates. The results of our analysis clearly indicate that expanding the GaN capping layer thickness from 1 nm to 100 nm prompts an increment in the electron concentration at hetero interface. As consequence of which drain current was additionally increments with GaN cap layer thicknesses, and eventually saturates at approximately 1.85 A/mm for capping layer thickness greater than 40 nm. Interestingly, for the same structure, the 2D-electron mobility, decrease monotonically with GaN capping layer thickness, and saturate at approximately 830 cm2/Vs for capping layer thickness greater than 50 nm. A device with a GaN cap layer didn't exhibit gate leakage current. Furthermore, it was observed that the carrier concentration was first decrease 1.03 × 1019/cm3 to 6.65 × 1018/cm3 with AlGaN Layer thickness from 5 to 10 nm and after that it increases with the AlGaN layer thickness from 10 to 30 nm. The same trend was followed for electric field distributions. Electron mobility decreases monotonically with AlGaN layer thickness. Highest electron mobility 1354 cm2/Vs were recorded for the AlGaN layer thickness of 5 nm. Results obtained are in good agreement with published experimental data.

  9. Molecular dynamics study of Pb-substituted Cu(1 0 0) surface layers

    Energy Technology Data Exchange (ETDEWEB)

    Evangelakis, G.A. [Department of Physics, University of Ioannina, PO Box 1186, Ioannina 45110 (Greece); Pontikis, V., E-mail: Vassilis.pontikis@cea.f [Laboratoire des Solides Irradies, CEA-DRECAM, 91191 Gif-sur-Yvette Cedex (France)

    2009-08-26

    Using molecular dynamics (MD) and phenomenological n-body potentials from the literature, we have studied the structure of the uppermost layers of low-index surfaces in copper after partial substitution of copper by lead atoms at randomly selected sites. We found that lead atoms substituting copper strongly perturb the positions of nearest and of next-nearest neighbors thus triggering the setup of a disordered, nanometer-thick amorphous-like surface layer. Equilibrium atomic density profiles, computed along the [1 0 0] crystallographic direction, show that amorphous overlayers are largely metastable whereas the system displays a structured compositional profile of lead segregating at the interfaces. Similarities between our results and experimental findings are briefly discussed.

  10. Molecular dynamics study of Pb-substituted Cu(1 0 0) surface layers

    International Nuclear Information System (INIS)

    Evangelakis, G.A.; Pontikis, V.

    2009-01-01

    Using molecular dynamics (MD) and phenomenological n-body potentials from the literature, we have studied the structure of the uppermost layers of low-index surfaces in copper after partial substitution of copper by lead atoms at randomly selected sites. We found that lead atoms substituting copper strongly perturb the positions of nearest and of next-nearest neighbors thus triggering the setup of a disordered, nanometer-thick amorphous-like surface layer. Equilibrium atomic density profiles, computed along the [1 0 0] crystallographic direction, show that amorphous overlayers are largely metastable whereas the system displays a structured compositional profile of lead segregating at the interfaces. Similarities between our results and experimental findings are briefly discussed.

  11. Ion implantation and amorphous metals

    International Nuclear Information System (INIS)

    Hohmuth, K.; Rauschenbach, B.

    1981-01-01

    This review deals with ion implantation of metals in the high concentration range for preparing amorphous layers (>= 10 at%, implantation doses > 10 16 ions/cm 2 ). Different models are described concerning formation of amorphous phases of metals by ion implantation and experimental results are given. The study of amorphous phases has been carried out by the aid of Rutherford backscattering combined with the channeling technique and using transmission electron microscopy. The structure of amorphous metals prepared by ion implantation has been discussed. It was concluded that amorphous metal-metalloid compounds can be described by a dense-random-packing structure with a great portion of metal atoms. Ion implantation has been compared with other techniques for preparing amorphous metals and the adventages have been outlined

  12. Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Se Jun [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Baik, Jaeyoon; Ha, Taekyun; Park, Chong Do [Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Shin, Hyun-Joon, E-mail: shj001@postech.ac.kr [Department of Physics, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of); Chung, JaeGwan; Lee, Jaecheol [A E Group, Samsung Advanced Institute of Technology, Giheung-Gu, Yongin-Si, GyeingGi-Do 449-712 (Korea, Republic of)

    2014-11-03

    Ag was thermally evaporated onto amorphous In–Ga–Zn–O (a-IGZO) thin film, and the Ag-thickness (< 0.3 nm)-dependent chemical states of the Ag-deposited a-IGZO thin-film surfaces were investigated by high-resolution X-ray photoelectron spectroscopy. As Ag layer thickness increased, Ag 3d shifted towards the lower binding energy (BE) side and In 3d developed a lower-BE component; however, O 1s, Ga 3d, and Zn 3d showed much smaller spectral feature changes than Ag 3d or In 3d. The analysis suggests that Ag atoms preferentially interact and share electrons with In atoms. The Ag 4d split feature at the valence band and the metallic states near the Fermi edge were noticeably visible when the Ag thickness was greater than 0.1 nm. - Highlights: • Ag was deposited on a-IGZO thin film using thermal evaporation method. • Chemical state changes of Ag-deposited a-IGZO were investigated by XPS. • As Ag layer thickness increased, In 3d developed a lower-BE component. • As Ag layer thickness increased, Ag 3d shifted towards the lower BE side. • Ag atoms preferentially interact and share electrons with In atoms.

  13. A method of detection to the grinding wheel layer thickness based on computer vision

    Science.gov (United States)

    Ji, Yuchen; Fu, Luhua; Yang, Dujuan; Wang, Lei; Liu, Changjie; Wang, Zhong

    2018-01-01

    This paper proposed a method of detection to the grinding wheel layer thickness based on computer vision. A camera is used to capture images of grinding wheel layer on the whole circle. Forward lighting and back lighting are used to enables a clear image to be acquired. Image processing is then executed on the images captured, which consists of image preprocessing, binarization and subpixel subdivision. The aim of binarization is to help the location of a chord and the corresponding ring width. After subpixel subdivision, the thickness of the grinding layer can be calculated finally. Compared with methods usually used to detect grinding wheel wear, method in this paper can directly and quickly get the information of thickness. Also, the eccentric error and the error of pixel equivalent are discussed in this paper.

  14. Influence of crustal layering and thickness on co-seismic effects of Wenchuan earthquake

    Directory of Open Access Journals (Sweden)

    Tan Hongbo

    2011-02-01

    Full Text Available Using the PSGRN/PSCMP software and the fault model offered by USGS and on the basis of finite rectangular dislocation theory and the local layered wave velocity structures of the crust-upper-mantle, the influences of crustal layering and thickness on co-seismic gravity changes and deformation of Wenchuan earthquake have been simulated. The results indicate that; the influences have a relationship with the attitude of faults and the relative position between calculated points and fault. The difference distribution form of simulated results between the two models is similar to that of co-seismic effect. For the per centum distribution, it’s restricted by the zero line of the co-seismic effects obviously. Its positive is far away from the zero line. For the crustal thickness, the effect is about 10% – 20%. The negative and the effect over 30% focus around the zero line. The average influences of crustal layering and thickness for the E-W displacement, N-S displacement, vertical displacement and gravity changes are 18.4%,18.0%, 15.8% and 16.2% respectively, When the crustal thickness is 40 km, they are 4.6%, 5.3%, 3.8% and 3.8%. Then the crustal thickness is 70 km, the average influences are 3.5%, 4.6%, 3.0% and 2.5% respectively.

  15. Contact problems of a rectangular block on an elastic layer of finite thickness. Part I: The thin layer

    NARCIS (Netherlands)

    Alblas, J.B.; Kuipers, M.

    1969-01-01

    We consider a layer of finite thickness loaded in plane strain by a stamp with a straight horizontal base, which is smooth and rigid. The stamp is pressed vertically into the layer and is slightly rotated by an external moment load subsequently. Two cases are considered successively: the lower side

  16. Ion-beam induced structure modifications in amorphous germanium

    International Nuclear Information System (INIS)

    Steinbach, Tobias

    2012-01-01

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy ε n deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 μm thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of ε e HRF =(10.5±1.0) kev nm -1 was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation ε e S a =(12±2) keV nm -1 for the first time extracted for a Ge the characteristic linear behaviour of the

  17. Sensing and controlling resin-layer thickness in additive manufacturing processes

    NARCIS (Netherlands)

    Kozhevnikov, A.

    2017-01-01

    This AM-TKI project in collaboration with TNO focusses on the sensing and control of resin-layer thickness in AM applications. Industrial Additive Manufacturing is considered to be a potential breakthrough production technology for many applications. A specific AM implementation is VAT photo

  18. Lesion dehydration rate changes with the surface layer thickness during enamel remineralization

    Science.gov (United States)

    Chang, Nai-Yuan N.; Jew, Jamison M.; Fried, Daniel

    2018-02-01

    A transparent highly mineralized outer surface zone is formed on caries lesions during remineralization that reduces the permeability to water and plaque generated acids. However, it has not been established how thick the surface zone should be to inhibit the penetration of these fluids. Near-IR (NIR) reflectance coupled with dehydration can be used to measure changes in the fluid permeability of lesions in enamel and dentin. Based on our previous studies, we postulate that there is a strong correlation between the surface layer thickness and the rate of dehydration. In this study, the rates of dehydration for simulated lesions in enamel with varying remineralization durations were measured. Reflectance imaging at NIR wavelengths from 1400-2300 nm, which coincides with higher water absorption and manifests the greatest sensitivity to contrast changes during dehydration measurements, was used to image simulated enamel lesions. The results suggest that the relationship between surface zone thickness and lesion permeability is highly non-linear, and that a small increase in the surface layer thickness may lead to a significant decrease in permeability.

  19. Non-destructive prediction of enteric coating layer thickness and drug dissolution rate by near-infrared spectroscopy and X-ray computed tomography.

    Science.gov (United States)

    Ariyasu, Aoi; Hattori, Yusuke; Otsuka, Makoto

    2017-06-15

    The coating layer thickness of enteric-coated tablets is a key factor that determines the drug dissolution rate from the tablet. Near-infrared spectroscopy (NIRS) enables non-destructive and quick measurement of the coating layer thickness, and thus allows the investigation of the relation between enteric coating layer thickness and drug dissolution rate. Two marketed products of aspirin enteric-coated tablets were used in this study, and the correlation between the predicted coating layer thickness and the obtained drug dissolution rate was investigated. Our results showed correlation for one product; the drug dissolution rate decreased with the increase in enteric coating layer thickness, whereas, there was no correlation for the other product. Additional examination of the distribution of coating layer thickness by X-ray computed tomography (CT) showed homogenous distribution of coating layer thickness for the former product, whereas the latter product exhibited heterogeneous distribution within the tablet, as well as inconsistent trend in the thickness distribution between the tablets. It was suggested that this heterogeneity and inconsistent trend in layer thickness distribution contributed to the absence of correlation between the layer thickness of the face and side regions of the tablets, which resulted in the loss of correlation between the coating layer thickness and drug dissolution rate. Therefore, the predictability of drug dissolution rate from enteric-coated tablets depended on the homogeneity of the coating layer thickness. In addition, the importance of micro analysis, X-ray CT in this study, was suggested even if the macro analysis, NIRS in this study, are finally applied for the measurement. Copyright © 2017 Elsevier B.V. All rights reserved.

  20. Surface and bulk crystallization of amorphous solid water films: Confirmation of “top-down” crystallization

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chunqing; Smith, R. Scott; Kay, Bruce D.

    2016-10-01

    The crystallization kinetics of nanoscale amorphous solid water (ASW) films are investigated using temperature-programmed desorption (TPD) and reflection absorption infrared spectroscopy (RAIRS). TPD measurements are used to probe surface crystallization and RAIRS measurements are used to probe bulk crystallization. Isothermal TPD results show that surface crystallization is independent of the film thickness (from 100 to 1000 ML). Conversely, the RAIRS measurements show that the bulk crystallization time increases linearly with increasing film thickness. These results suggest that nucleation and crystallization begin at the ASW/vacuum interface and then the crystallization growth front propagates linearly into the bulk. This mechanism was confirmed by selective placement of an isotopic layer (5% D2O in H2O) at various positions in an ASW (H2O) film. In this case, the closer the isotopic layer was to the vacuum interface, the earlier the isotopic layer crystallized. These experiments provide direct evidence to confirm that ASW crystallization in vacuum proceeds by a “top-down” crystallization mechanism.

  1. Properties of p-type amorphous silicon carbide window layers prepared using boron trifluoride

    Energy Technology Data Exchange (ETDEWEB)

    Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Gutierrez, M T [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Carabe, J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain)

    1993-03-01

    One set (A) of undoped and three sets (B, C and D) of doped hydrogenated amorphous silicon carbide samples have been made in the framework of a research plan for obtaining high quality p-type window layers by radiofrequency glow discharge of silane-based gas mixtures. The samples of sets A and B were made using different RF-power-density to mass-flow ratios for various methane percentages in the gas mixture. The best carbon incorporation in the amorphous silicon lattice was obtained at the highest RF-power density. The properties of sets C and D, prepared using different RF-power densities and silane and methane proportions have been analysed as functions of the concentration of boron trifluoride with respect to silane. In both cases, the optical gap E[sub G], after a slight initial decrease, remains at a value of approximately 2.1 eV without quenching in the doping ranges covered. The best conductivity obtained is 2x10[sup -7] ([Omega] cm)[sup -1]. IR spectra allow to associate these features with the structural quality of the films. (orig.)

  2. Numerical algorithm for laser treatment of powder layer with variable thickness

    Science.gov (United States)

    Soboleva, Polina; Knyazeva, Anna

    2017-12-01

    Two-dimensional model of laser treatment of powder layer on the substrate is proposed in this paper. The model takes into account the shrinkage of powder layer due to the laser treatment. Three simplified variants of the model were studied. Firstly, the influence of optical properties of powder layer on the maximal temperature was researched. Secondly, two-dimensional model for given thickness of powder layer was studied where practically uniform temperature distribution across thin powder layer was demonstrated. Then, the numerical algorithm was developed to calculate the temperature field for the area of variable size. The impact of the optical properties of powder material on the character of the temperature distribution was researched numerically.

  3. High-throughput identification of higher-κ dielectrics from an amorphous N2-doped HfO2–TiO2 library

    International Nuclear Information System (INIS)

    Chang, K.-S.; Lu, W.-C.; Wu, C.-Y.; Feng, H.-C.

    2014-01-01

    Highlights: • Amorphous N 2 -doped HfO 2 –TiO 2 libraries were fabricated using sputtering. • Structure and quality of the dielectric and interfacial layers were investigated. • κ (54), J L < 10 −6 A/cm 2 , and equivalent oxide thickness (1 nm) were identified. - Abstract: High-throughput sputtering was used to fabricate high-quality, amorphous, thin HfO 2 –TiO 2 and N 2 -doped HfO 2 –TiO 2 (HfON–TiON) gate dielectric libraries. Electron probe energy dispersive spectroscopy was used to investigate the structures, compositions, and qualities of the dielectric and interfacial layers of these libraries to determine their electrical properties. A κ value of approximately 54, a leakage current density <10 −6 A/cm 2 , and an equivalent oxide thickness of approximately 1 nm were identified in an HfON–TiON library within a composition range of 68–80 at.% Ti. This library exhibits promise for application in highly advanced metal–oxide–semiconductor (higher-κ) gate stacks

  4. Study of the Variation of Material layer Compotition and Thickness Related Neutron Flux and Gamma Radiation

    Science.gov (United States)

    Nirmalasari, Yuliana Dian; Suparmi; Sardjono, Y.

    2017-11-01

    Optimation of simulation design of collimator is corresponding to 30 MeV cyclotron generator. The simulation has used the variation of the thickness materials layers that was applied at treatment room’s door. The purpose of the variation and thickness of the material in this simulation to obtain optimum results for the shielding design in the irradiation chamber. The layers that we used are Pb-Fe and Pb-SS312. Simulation on cancer treatment is used with monte carlo simaulation MCNPX. The spesifications that we used for cyclotron is the spesification of the HM-30 Proton Cyclotron from Sumitomo Heavy Industries Ltd. The variation of the thickness materials layers that was applied at treatment room’s door are Pb remains 4cm while Fe and SS312 varies between 2 cm, 4 cm, 6 cm respectively. This simulation of Fe layer on Pb was give good result in measurement simulation at 4 cm thickness.

  5. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  6. Splitting diffraction peak in different thickness LL-interferometer and determination of thickness of damaged layer induced by electron irradiation of plates

    International Nuclear Information System (INIS)

    Truni, K.G.; Sedrakyan, A.G.; Papoyan, A.A.; Bezirganyan, P.A.

    1988-01-01

    Amplitude of twice reflected beam is calculated analytically, oscillatory dependence of peak intensity in the centre of diffraction image on the small variations in thickness is shown. The expression, clearly binding the splitting value of diffraction peak with variation in thickness of the interferometer plates, is received. The effect of variation in thickness on the splitting value of focal line is studied experimentally in case of irradiation of the equal-arm Π-shaped interferometer blocks by fast electron flow, thickness of the originated damaged layers are determined

  7. Micromechanics of Amorphous Metal/Polymer Hybrid Structures with 3D Cellular Architectures: Size Effects, Buckling Behavior, and Energy Absorption Capability.

    Science.gov (United States)

    Mieszala, Maxime; Hasegawa, Madoka; Guillonneau, Gaylord; Bauer, Jens; Raghavan, Rejin; Frantz, Cédric; Kraft, Oliver; Mischler, Stefano; Michler, Johann; Philippe, Laetitia

    2017-02-01

    By designing advantageous cellular geometries and combining the material size effects at the nanometer scale, lightweight hybrid microarchitectured materials with tailored structural properties are achieved. Prior studies reported the mechanical properties of high strength cellular ceramic composites, obtained by atomic layer deposition. However, few studies have examined the properties of similar structures with metal coatings. To determine the mechanical performance of polymer cellular structures reinforced with a metal coating, 3D laser lithography and electroless deposition of an amorphous layer of nickel-boron (NiB) is used for the first time to produce metal/polymer hybrid structures. In this work, the mechanical response of microarchitectured structures is investigated with an emphasis on the effects of the architecture and the amorphous NiB thickness on their deformation mechanisms and energy absorption capability. Microcompression experiments show an enhancement of the mechanical properties with the NiB thickness, suggesting that the deformation mechanism and the buckling behavior are controlled by the brittle-to-ductile transition in the NiB layer. In addition, the energy absorption properties demonstrate the possibility of tuning the energy absorption efficiency with adequate designs. These findings suggest that microarchitectured metal/polymer hybrid structures are effective in producing materials with unique property combinations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Analysis on Interfacial Performance of CFRPConcrete with Different Thickness of Adhesive Layer and CFRP Plate

    Directory of Open Access Journals (Sweden)

    Guo Qingyong

    2018-01-01

    Full Text Available The bond behavior of CFRP-concrete interface is the analysis foundation for concrete structures with external strengthening CFRP. In the paper, the influences of the thickness of CFRP plate and adhesive layer on interfacial adhesive properties are investigated through the finite element program. The influence rules of the thickness on the interfacial ultimate bearing capacity and the effective bond length are performed. The results show that the thickness of adhesive layer and CFRP plate has a significant effect on the interfacial performance of CFRP-concrete.

  9. Inversion of potential-field data for layers with uneven thickness

    OpenAIRE

    Caratori Tontini, F.; Cocchi, L.; Carmisciano, C.; Stefanelli, P.

    2008-01-01

    AB: Inversion of large-scale potential-field anomalies, aimed at determining density or magnetization, is usually made in the Fourier domain. The commonly adopted geometry is based on a layer of constant thickness, characterized by a bottom surface at a fixed distance from the top surface.....

  10. The influence of thickness and viscosity of liquid annular layer on dynamic behavior of cylindrical shell

    International Nuclear Information System (INIS)

    Kuzelka, V.; Neuman, F.; Pecinka, L.

    1983-01-01

    This paper presents the results of experiments concerning the influence of thickness and viscosity of inner and outer annular layers of a liquid on the dynamic behaviour of a cylindrical shell, and a mathematical model of the problem based on acoustic approach is formulated to compare experimental and theoretical results. The measurements of natural frequencies and of damping ratios of a cylindrical shell were carried out with water and with two kinds of mineral oils of different viscosities. The results point towards the fact that with a decreasing thickness of the liquid layer the influence of the added liquid mass increases and the frequency drop is higher. On the other hand there is a certain relative magnitude of the surrounding medium at which the system behaves as an unlimited one. This magnitude depends on the mode order. The statement that the lesser is the thickness of the annular liquid layer the more important is its influence and the larger is the added liquid mass holds up to a certain thickness of the gap, comparable with the thickness of the thin liquid layer on the surface of the shell in which there has not yet been formed a transverse wave. The flowing in this layer is not potential. The governing equation for the description of this problem then is not Euler equation but Stokes's and Helmholtz's theorems for whirling motion. The thickness of the surface layer depends on the viscosity of the liquid. The frequencies measured for the least gap for water were well identified, while for both the mineral oils were chaotical, without any conspicuous resonances. (orig./GL)

  11. Multi-layer thickness determination using differential-based enhanced Fourier transforms of X-ray reflectivity data

    Energy Technology Data Exchange (ETDEWEB)

    Poust, Benjamin [Department of Materials Science and Engineering, University of California, Los Angeles, CA (United States); Northrop Grumman Space Technology, Redondo Beach, CA (United States); Sandhu, Rajinder [Northrop Grumman Space Technology, Redondo Beach, CA (United States); Goorsky, Mark [Department of Materials Science and Engineering, University of California, Los Angeles, CA (United States)

    2009-08-15

    Layer thickness determination of single and multi-layer structures is achieved using a new method for generating Fourier transforms (FTs) of X-ray reflectivity data. This enhanced Fourier analysis is compared to other techniques in the determination of AlN layer thickness deposited on sapphire. In addition to demonstrably improved results, the results also agree with thicknesses determined using simulations and TEM measurements. The effectiveness of the technique is further demonstrated using the more complicated metamorphic epitaxial multi-layer AlSb/InAs structures deposited on GaAs. The approach reported here is based upon differentiating the specular intensity with respect to the vertical reciprocal space coordinate Q{sub Z}. In general, differentiation is far more effective at removing the sloping background present in reflectivity scans than logarithmic compression alone, average subtraction alone, or other methods. When combined with any of the other enhancement techniques, however, differentiation yields distinguishable discrete Fourier transform (DFT) power spectrum peaks for even the weakest and most truncated of sloping oscillations that are present in many reflectivity scans from multi-layer structures. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  12. [Multiplayer white organic light-emitting diodes with different order and thickness of emission layers].

    Science.gov (United States)

    Xu, Wei; Lu, Fu-Han; Cao, Jin; Zhu, Wen-Qing; Jiang, Xue-Yin; Zhang, Zhi-Lin; Xu, Shao-Hong

    2008-02-01

    In multilayer OLED devices, the order and thickness of the emission layers have great effect on their spectrum. Based on the three basic colours of red, blue and green, a series of white organic light-emitting diodes(WOLEDS)with the structure of ITO/CuPc(12 nm)/NPB(50 nm)/EML/LiF(1 nm)/Al(100 nm) and a variety of emission layer's orders and thicknesses were fabricated. The blue emission material: 2-t-butyl-9,10-di-(2-naphthyl)anthracene (TBADN) doped with p-bis(p-N, N-diphenyl-amono-styryl)benzene(DSA-Ph), the green emission material: tris-[8-hydroxyquinoline]aluminum(Alq3) doped with C545, and the red emission material: tris-[8-hydroxyquinoline]aluminum( Alq3) doped with 4-(dicyanomethylene)-2-t-butyl-6-(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) were used. By adjusting the order and thickness of each emission layer in the RBG structure, we got a white OLED with current efficiency of 5.60 cd x A(-1) and Commission Internationale De L'Eclairage (CIE) coordinates of (0. 34, 0.34) at 200 mA x cm(-2). Its maximum luminance reached 20 700 cd x m(-2) at current density of 400 mA x cm(-2). The results were analyzed on the basis of the theory of excitons' generation and diffusion. According to the theory, an equation was set up which relates EL spectra to the luminance efficiency, the thickness of each layer and the exciton diffusion length. In addition, in RBG structure with different thickness of red layer, the ratio of th e spectral intensity of red to that of blue was calculated. It was found that the experimental results are in agreement with the theoretical values.

  13. Structure-property relations in amorphous carbon for photovoltaics

    International Nuclear Information System (INIS)

    Risplendi, Francesca; Cicero, Giancarlo; Bernardi, Marco; Grossman, Jeffrey C.

    2014-01-01

    Carbon is emerging as a material with great potential for photovoltaics (PV). However, the amorphous form (a-C) has not been studied in detail as a PV material, even though it holds similarities with amorphous Silicon (a-Si) that is widely employed in efficient solar cells. In this work, we correlate the structure, bonding, stoichiometry, and hydrogen content of a-C with properties linked to PV performance such as the electronic structure and optical absorption. We employ first-principles molecular dynamics and density functional theory calculations to generate and analyze a set of a-C structures with a range of densities and hydrogen concentrations. We demonstrate that optical and electronic properties of interest in PV can be widely tuned by varying the density and hydrogen content. For example, sunlight absorption in a-C films can significantly exceed that of a same thickness of a-Si for a range of densities and H contents in a-C. Our results highlight promising features of a-C as the active layer material of thin-film solar cells.

  14. Structure-property relations in amorphous carbon for photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Risplendi, Francesca; Cicero, Giancarlo [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, 10129 Torino (Italy); Bernardi, Marco [Department of Physics, University of California, Berkeley, California 94720 (United States); Grossman, Jeffrey C., E-mail: jcg@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-07-28

    Carbon is emerging as a material with great potential for photovoltaics (PV). However, the amorphous form (a-C) has not been studied in detail as a PV material, even though it holds similarities with amorphous Silicon (a-Si) that is widely employed in efficient solar cells. In this work, we correlate the structure, bonding, stoichiometry, and hydrogen content of a-C with properties linked to PV performance such as the electronic structure and optical absorption. We employ first-principles molecular dynamics and density functional theory calculations to generate and analyze a set of a-C structures with a range of densities and hydrogen concentrations. We demonstrate that optical and electronic properties of interest in PV can be widely tuned by varying the density and hydrogen content. For example, sunlight absorption in a-C films can significantly exceed that of a same thickness of a-Si for a range of densities and H contents in a-C. Our results highlight promising features of a-C as the active layer material of thin-film solar cells.

  15. Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2016-06-27

    This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

  16. Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

    International Nuclear Information System (INIS)

    Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho; Balaji, Nagarajan; Ahn, Shihyun; Hussain, Shahzada Qamar; Han, Sangmyeong; Jung, Junhee; Jang, Juyeon; Lee, Yunjung; Yi, Junsin

    2013-01-01

    Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J sc . ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V oc . ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V oc ), short-circuit current density (J sc ), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm 2 heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V oc of 690 mV, J sc of 33.62 mA/cm 2 , and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells

  17. The thickness of the HI gas layer in spiral galaxies

    NARCIS (Netherlands)

    Sicking, Floris Jan

    1997-01-01

    In the present study, in two inclined spiral galaxies, NGC 3198 and NGC 2403, the HI random velocity dispersion and layer thickness will be measured simultaneously. This will be done from the HI velocity dispersion field (the distribution on the sky of the observed HI line of sight velocity

  18. Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

    KAUST Repository

    Wang, Lei

    2011-06-01

    We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while some others contain nanometer-scale crystallites sandwiched in between amorphous layers. We also find that there is significant oxygen enrichment at the grain boundaries. Such results explain the relatively low transport critical current density (Jc) of polycrystalline samples with respect to that of bicrystal films.

  19. Nanometer-resolution electron microscopy through micrometers-thick water layers

    Energy Technology Data Exchange (ETDEWEB)

    Jonge, Niels de, E-mail: niels.de.jonge@vanderbilt.edu [Vanderbilt University Medical Center, Department of Molecular Physiology and Biophysics, Nashville, TN 37232-0615 (United States); Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); Poirier-Demers, Nicolas; Demers, Hendrix [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada); Peckys, Diana B. [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831-6064 (United States); University of Tennessee, Center for Environmental Biotechnology, Knoxville, TN 37996-1605 (United States); Drouin, Dominique [Universite de Sherbrooke, Electrical and Computer Engineering, Sherbrooke, Quebec J1K 2R1 (Canada)

    2010-08-15

    Scanning transmission electron microscopy (STEM) was used to image gold nanoparticles on top of and below saline water layers of several micrometers thickness. The smallest gold nanoparticles studied had diameters of 1.4 nm and were visible for a liquid thickness of up to 3.3 {mu}m. The imaging of gold nanoparticles below several micrometers of liquid was limited by broadening of the electron probe caused by scattering of the electron beam in the liquid. The experimental data corresponded to analytical models of the resolution and of the electron probe broadening as function of the liquid thickness. The results were also compared with Monte Carlo simulations of the STEM imaging on modeled specimens of similar geometry and composition as used for the experiments. Applications of STEM imaging in liquid can be found in cell biology, e.g., to study tagged proteins in whole eukaryotic cells in liquid and in materials science to study the interaction of solid:liquid interfaces at the nanoscale.

  20. Study of the layer developed at the surface of a nuclear glass during alteration by water. Comparison between solution analysis data and electron microscopy data

    International Nuclear Information System (INIS)

    Thomassin, J.H.; Touray, J.C.; Nogues, J.L.

    1983-01-01

    The alteration of a nuclear glass by boiling water leads to the formation of a layer whose thickness is 7 μm after 27 days and 15 μm after 52 days. This layer is composed of two parts: the outer one, widely crystallised, in which one finds a silico-phosphatic zone bearing rare-earth elements, and an inner part widely amorphous whose thickness is time dependent [fr

  1. Nonmonotonic behaviour of superconducting critical temperature of Nb/CuNi bilayers with a nanometer range of layer thickness

    International Nuclear Information System (INIS)

    Morari, R.; Antropov, E.; Socrovisciuc, A.; Prepelitsa, A.; Zdravkov, V.I.; Tagirov, L.R.; Kupriyanov, M.Yu.; Sidorenko, A.S.

    2009-01-01

    Present work reports the result of the proximity effect investigation for superconducting Nb/CuNi-bilayers with the thickness of the ferromagnetic layer (Cu x Ni 1-x ) being in the sub-nanometer range. It was found a non-monotonic behavior of the critical temperature T c , i.e. its growth with the increasing of the ferromagnetic layer thickness dF, for the series of the samples with constant thickness of Nb layer, (d Nb = const). (authors)

  2. Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V

    Directory of Open Access Journals (Sweden)

    Xuezhi Shi

    2016-12-01

    Full Text Available To increase building rate and save cost, the selective laser melting (SLM of Ti6Al4V with a high layer thickness (200 μm and low cost coarse powders (53 μm–106 μm at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm3/s, which is about 2 times–9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

  3. Performance of High Layer Thickness in Selective Laser Melting of Ti6Al4V.

    Science.gov (United States)

    Shi, Xuezhi; Ma, Shuyuan; Liu, Changmeng; Chen, Cheng; Wu, Qianru; Chen, Xianping; Lu, Jiping

    2016-12-01

    To increase building rate and save cost, the selective laser melting (SLM) of Ti6Al4V with a high layer thickness (200 μm) and low cost coarse powders (53 μm-106 μm) at a laser power of 400 W is investigated in this preliminary study. A relatively large laser beam with a diameter of 200 μm is utilized to produce a stable melt pool at high layer thickness, and the appropriate scanning track, which has a smooth surface with a shallow contact angle, can be obtained at the scanning speeds from 40 mm/s to 80 mm/s. By adjusting the hatch spacings, the density of multi-layer samples can be up to 99.99%, which is much higher than that achieved in previous studies about high layer thickness selective laser melting. Meanwhile, the building rate can be up to 7.2 mm³/s, which is about 2 times-9 times that of the commercial equipment. Besides, two kinds of defects are observed: the large un-melted defects and the small spherical micropores. The formation of the un-melted defects is mainly attributed to the inappropriate overlap rates and the unstable scanning tracks, which can be eliminated by adjusting the processing parameters. Nevertheless, the micropores cannot be completely eliminated. It is worth noting that the high layer thickness plays a key role on surface roughness rather than tensile properties during the SLM process. Although a sample with a relatively coarse surface is generated, the average values of yield strength, ultimate tensile strength, and elongation are 1050 MPa, 1140 MPa, and 7.03%, respectively, which are not obviously different than those with the thin layer thickness used in previous research; this is due to the similar metallurgical bonding and microstructure.

  4. Thiophene Rings Improve the Device Performance of Conjugated Polymers in Polymer Solar Cells with Thick Active Layers

    NARCIS (Netherlands)

    Duan, C.; Gao, K.; Colberts, F. J. M.; Liu, F.; Meskers, S. C. J.; Wienk, M. M.; Janssen, R. A. J.

    2017-01-01

    Developing novel materials that tolerate thickness variations of the active layer is critical to further enhance the efficiency of polymer solar cells and enable large-scale manufacturing. Presently, only a few polymers afford high efficiencies at active layer thickness exceeding 200 nm and

  5. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

    Directory of Open Access Journals (Sweden)

    Haiting Xie

    2017-10-01

    Full Text Available The nitrogen-doped amorphous oxide semiconductor (AOS thinfilm transistors (TFTs with double-stacked channel layers (DSCL were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108 and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs.

  6. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  7. Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

    International Nuclear Information System (INIS)

    He Ming; Ishihara, Ryoichi; Metselaar, Wim; Beenakker, Kees

    2007-01-01

    In this paper, agglomeration phenomena of amorphous Si (α-Si) films due to high energy density excimer laser irradiation are systematically investigated. The agglomeration, which creates holes or breaks the continuous Si film up into spherical beads, is a type of serious damage. Therefore, it determines an upper energy limit for excimer laser crystallization. It is speculated that the agglomeration is caused by the boiling of molten Si. During this process, outbursts of heterogeneously nucleated vapor bubbles are promoted by the poor wetting property of molten silicon on the SiO 2 layer underneath. The onset of the agglomeration is defined by extrapolating the hole density as a function of the energy density of the laser pulse. A SiO 2 capping layer (CL) is introduced on top of the α-Si film to investigate its influence on the agglomeration. It is found that effects of the CL depend on its thickness. The CL with a thickness less than 300 nm can be used to suppress the agglomeration. A thin CL acts as a confining layer and puts a constraint on bubble burst, and hence suppresses the agglomeration

  8. Contribution of thickness dependent void fraction and TiSixOy interlayer to the optical properties of amorphous TiO2 thin films

    International Nuclear Information System (INIS)

    Zhang, Fan; Zhang, Rong-Jun; Zheng, Yu-Xiang; Xu, Zi-Jie; Zhang, Dong-Xu; Wang, Zi-Yi; Yu, Xiang; Chen, Liang-Yao

    2013-01-01

    The optical properties of TiO 2 thin films prepared by electron beam evaporation were studied by spectroscopic ellipsometry and analyzed quantitatively using effective medium approximation theory and an effective series capacitance model. The refractive indices of TiO 2 are essentially constant and approach to those of bulk TiO 2 for films thicker than 40 nm, but drop sharply with a decrease in thickness from 40 to 5.5 nm. This phenomenon can be interpreted quantitatively by the thickness dependence of the void fraction and interfacial oxide region. The optical band gaps calculated from Tauc law increase with an increase of film thickness, and can be attributed to the contribution of disorder effect. - Highlights: • Amorphous TiO 2 thin films fabricated on Si substrate by electron beam evaporation • The refractive index and band gap are obtained from spectroscopic ellipsometry. • The refractive index decreases with decreasing film thickness. • Effective medium approximation theory and effective series capacitance model introduced • A band gap increases gradually with an increase in film thickness

  9. Effect of light trapping in an amorphous silicon solar cell

    International Nuclear Information System (INIS)

    Iftiquar, S.M.; Jung, Juyeon; Park, Hyeongsik; Cho, Jaehyun; Shin, Chonghoon; Park, Jinjoo; Jung, Junhee; Bong, Sungjae; Kim, Sunbo; Yi, Junsin

    2015-01-01

    Light trapping in amorphous silicon based solar cell has been investigated theoretically. The substrate for these cells can be textured, including pyramidally textured c-Si wafer, to improve capture of incident light. A thin silver layer, deposited on the substrate of an n–i–p cell, ultimately goes at the back of the cell structure and can act a back reflector to improve light trapping. The two physical solar cells we investigated had open circuit voltages (V oc ) of 0.87, 0.90 V, short circuit current densities (J sc ) of 14.2, 15.36 mA/cm 2 respectively. The first cell was investigated for the effect on its performance while having and not having light trapping scheme (LT), when thickness of the active layer (d i ) was changed in the range of 100 nm to 800 nm. In both the approaches, for having or not having LT, the short circuit current density increases with d i while the V oc and fill factor, decreases steadily. However, maximum cell efficiency can be obtained when d i = 400 nm, and hence it was considered optimized thickness of the active layer, that was used for further investigation. With the introduction of light trapping to the second cell, it shows a further enhancement in J sc and red response of the external quantum efficiency to 16.6 mA/cm 2 and by 11.1% respectively. Considering multiple passages of light inside the cell, we obtained an improvement in cell efficiency from 9.7% to 10.6%. - Highlights: • A theoretical analysis of light trapping in p–i–n and n–i–p type solar cells • J sc increases and V oc decreases with the increase in i-layer thickness. • Observed optimized thickness of i-layer as 400 nm • J sc improved from 15.4 mA/cm 2 to 16.6 mA/cm 2 due to the light trapping. • Efficiency (η) improved from 9.7% to 10.6% due to better red response of the EQE

  10. Fractal-like thickness and topography of the salt layer in a pillows province of the southern North Sea

    Science.gov (United States)

    Hernandez Maya, K.; Mitchell, N. C.; Huuse, M.

    2017-12-01

    Salt topography and thickness variations are important for testing theories of how halokinetic deformation proceeds. The ability to predict thickness variations of salt at small scale is also important for reservoir evaluations, as breach of the salt layer can lead to loss of petroleum fluids and can be difficult to evaluate from seismic reflection data. Relevant to these issues, we here report analysis of data on salt layer topography and thickness from the southern North Sea, where the salt is organized into pillows. These data were derived by the Geological Survey of the Netherlands (TNO) from industry 3D seismic reflection data combined with a dense network of well information. Highs and lows in the topography of the upper salt interface occur spaced over a variety of lengthscales. Power spectral analysis of the interface topography reveals a simple inverse power law relationship between power spectral density and spatial wave number. The relationship suggests that the interface is a self-affine fractal with a fractal dimension of 2.85. A similar analysis of the salt layer thickness also suggests a fractal-like power law. Whereas the layer thickness power law is unsurprising as the underlying basement topography dominates the thickness and it also has a fractal-like power spectrum, the salt topography is not so easily explained as not all the basement faults are overlaid by salt pillows, instead some areas of the dataset salt thinning overlies faults. We consider instead whether a spatially varied loading of the salt layer may have caused this fractal-like geometry. Varied density and thickness of overburdening layers seem unlikely causes, as thicknesses of layers and their reflectivities do not vary sympathetically with the topography of the interface. The composition of the salt layer varies with the relative proportions of halite and denser anhydrite and other minerals. Although limited in scope and representing the mobilized salt layer, the information from

  11. Confined methane-water interfacial layers and thickness measurements using in situ Raman spectroscopy.

    Science.gov (United States)

    Pinho, Bruno; Liu, Yukun; Rizkin, Benjamin; Hartman, Ryan L

    2017-11-07

    Gas-liquid interfaces broadly impact our planet, yet confined interfaces behave differently than unconfined ones. We report the role of tangential fluid motion in confined methane-water interfaces. The interfaces are created using microfluidics and investigated by in situ 1D, 2D and 3D Raman spectroscopy. The apparent CH 4 and H 2 O concentrations are reported for Reynolds numbers (Re), ranging from 0.17 to 8.55. Remarkably, the interfaces are comprised of distinct layers of thicknesses varying from 23 to 57 μm. We found that rarefaction, mixture, thin film, and shockwave layers together form the interfaces. The results indicate that the mixture layer thickness (δ) increases with Re (δ ∝ Re), and traditional transport theory for unconfined interfaces does not explain the confined interfaces. A comparison of our results with thin film theory of air-water interfaces (from mass transfer experiments in capillary microfluidics) supports that the hydrophobicity of CH 4 could decrease the strength of water-water interactions, resulting in larger interfacial thicknesses. Our findings help explain molecular transport in confined gas-liquid interfaces, which are common in a broad range of societal applications.

  12. CANDU fuel sheath integrity and oxide layer thickness determination by Eddy current technique

    International Nuclear Information System (INIS)

    Gheorghe, Gabriela; Man, Ion; Parvan, Marcel; Valeca, Serban

    2010-01-01

    This paper presents results concerning the integrity assessment of the fuel elements cladding and measurements of the oxide layer on sheaths, using the eddy current technique. Flaw detection using eddy current provides information about the integrity of fuel element sheath or presence of defects in the sheath produced by irradiation. The control equipment consists of a flaw detector with eddy currents, operable in the frequency range 10 Hz to 10 MHz, and a differential probe. The calibration of the flaw detector is done using artificial defects (longitudinal, transversal, external and internal notches, bored and unbored holes) obtained on Zircaloy-4 tubes identical to those out of which the sheath of the CANDU fuel element is manufactured (having a diameter of 13.08 mm and a wall thickness of 0.4 mm). When analyzing the behavior of the fuel elements' cladding facing the corrosion is important to know the thickness of the zirconium oxide layer. The calibration of the device measuring the thickness of the oxide layer is done using a Zircaloy-4 tube identical to that which the cladding of the CANDU fuel element is manufactured of, and calibration foils, as well. (authors)

  13. Investigation of the electrochemical deposition of thick layers of cadmium telluride

    International Nuclear Information System (INIS)

    Rousset, J.

    2007-04-01

    This research thesis deals with the problem of electrochemical deposition of thick layers of cadmium telluride (CdTe) meeting the requirements of high energy radiation detection. The author first recalls the physicochemical properties of CdTe and the basic principles of radiology. He details the different criteria which define a material for X ray detection. He describes the experimental conditions, the nature and preparation of substrates, and the different electrochemical systems used in this research. He studies the impact of the applied potential on the material properties, and compares previously obtained results available in the literature with those obtained in the chosen pool conditions. He discusses the synthesis of CdTe thick layers for which different methods are tested: static in potential, static in intensity, pulsed. The coatings obtained with a given potential and then with a given current are investigated. Finally, the influence of a thermal treatment in presence or absence of a sintering agent on the morphology, the chemical composition, and the crystalline and electric properties of the deposited material is discussed, and the results of the behaviour under X rays of a electrodeposited layer are presented

  14. Three hydrogenated amorphous silicon photodiodes stacked for an above integrated circuit colour sensor

    Energy Technology Data Exchange (ETDEWEB)

    Gidon, Pierre; Giffard, Benoit; Moussy, Norbert; Parrein, Pascale; Poupinet, Ludovic [CEA-LETI, MINATEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

    2010-03-15

    We present theoretical simulation and experimental results of a new colour pixel structure. This pixel catches the light in three stacked amorphous silicon photodiodes encompassed between transparent electrodes. The optical structure has been simulated for signal optimisation. The thickness of each stacked layer is chosen in order to absorb the maximum of light and the three signals allow to linearly calculate the CIE colour coordinates 1 with minimum error and noise. The whole process is compatible with an above integrated circuit (IC) approach. Each photodiode is an n-i-p structure. For optical reason, the upper diode must be controlled down to 25 nm thickness. The first test pixel structure allows a good recovering of colour coordinates. The measured absorption spectrum of each photodiode is in good agreement with our simulations. This specific stack with three photodiodes per pixel totalises two times more signal than an above IC pixel under a standard Bayer pattern 2,3. In each square of this GretagMacbeth chart is the reference colour on the right and the experimentally measured colour on the left with three amorphous silicon photodiodes per pixel. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  15. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

    Science.gov (United States)

    Saha, D.; Ajimsha, R. S.; Rajiv, K.; Mukherjee, C.; Gupta, M.; Misra, P.; Kukreja, L. M.

    2014-10-01

    TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (Ts) in a wide range (50 °C ≤ Ts ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (Ts ≤ 150 °C) to the nanocrystalline films (2500 < Ts ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple-DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  16. New Normative Database of Inner Macular Layer Thickness Measured by Spectralis OCT Used as Reference Standard for Glaucoma Detection.

    Science.gov (United States)

    Nieves-Moreno, María; Martínez-de-la-Casa, José M; Bambo, María P; Morales-Fernández, Laura; Van Keer, Karel; Vandewalle, Evelien; Stalmans, Ingeborg; García-Feijoó, Julián

    2018-02-01

    This study examines the capacity to detect glaucoma of inner macular layer thickness measured by spectral-domain optical coherence tomography (SD-OCT) using a new normative database as the reference standard. Participants ( N = 148) were recruited from Leuven (Belgium) and Zaragoza (Spain): 74 patients with early/moderate glaucoma and 74 age-matched healthy controls. One eye was randomly selected for a macular scan using the Spectralis SD-OCT. The variables measured with the instrument's segmentation software were: macular nerve fiber layer (mRNFL), ganglion cell layer (GCL), and inner plexiform layer (IPL) volume and thickness along with circumpapillary RNFL thickness (cpRNFL). The new normative database of macular variables was used to define the cutoff of normality as the fifth percentile by age group. Sensitivity, specificity, and area under the receiver operating characteristic curve (AUROC) of each macular measurement and of cpRNFL were used to distinguish between patients and controls. Overall sensitivity and specificity to detect early-moderate glaucoma were 42.2% and 88.9% for mRNFL, 42.4% and 95.6% for GCL, 42.2% and 94.5% for IPL, and 53% and 94.6% for RNFL, respectively. The best macular variable to discriminate between the two groups of subjects was outer temporal GCL thickness as indicated by an AUROC of 0.903. This variable performed similarly to mean cpRNFL thickness (AUROC = 0.845; P = 0.29). Using our normative database as reference, the diagnostic power of inner macular layer thickness proved comparable to that of peripapillary RNFL thickness. Spectralis SD-OCT, cpRNFL thickness, and individual macular inner layer thicknesses show comparable diagnostic capacity for glaucoma and RNFL, GCL, and IPL thickness may be useful as an alternative diagnostic test when the measure of cpRNFL shows artifacts.

  17. XPS and TEM study of W-DLC/DLC double-layered film

    International Nuclear Information System (INIS)

    Takeno, Takanori; Komiyama, Takao; Miki, Hiroyuki; Takagi, Toshiyuki; Aoyama, Takashi

    2009-01-01

    A double-layered film of tungsten-containing diamond-like carbon (W-DLC) and DLC, (W-DLC)/DLC, was investigated. A film of 1.6 μm in thickness was deposited onto silicon substrate. The investigate double-layered coating was deposited by using the combination of PECVD and co-sputtering of tungsten metal target. Structure, interface and chemical bonding state of the investigated film were analyzed by Transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). From the results of the analyses, the structure of double-layered film is that amorphous phase of carbon is continued from DLC to W-DLC and tungsten metal clusters are dispersed in W-DLC layer.

  18. Vanishing stick-slip friction in few-layer graphenes: the thickness effect.

    Science.gov (United States)

    Xu, Liang; Ma, Tian-Bao; Hu, Yuan-Zhong; Wang, Hui

    2011-07-15

    We report the thickness dependence of intrinsic friction in few-layer graphenes, adopting molecular dynamics simulations. The friction force drops dramatically with decreasing number of layers and finally approaches zero with two or three layers. The results, which are robust over a wide range of temperature, shear velocity, and pressure are quantitatively explained by a theoretical model with regard to lateral stiffness, slip length, and maximum lateral force, which could provide a new conceptual framework for understanding stick-slip friction. The results reveal the crucial role of the dimensional effect in nanoscale friction, and could be helpful in the design of graphene-based nanodevices.

  19. Preparation and characterization of amorphous manganese sulfide thin films by SILAR method

    International Nuclear Information System (INIS)

    Pathan, H.M.; Kale, S.S.; Lokhande, C.D.; Han, Sung-Hwan; Joo, Oh-Shim

    2007-01-01

    Manganese sulfide thin films were deposited by a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method using manganese acetate as a manganese and sodium sulfide as sulfide ion sources, respectively. Manganese sulfide films were characterized for their structural, surface morphological and optical properties by means of X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis and optical absorption measurement techniques. The as-deposited film on glass substrate was amorphous. The optical band gap of the film was found to be thickness dependent. As thickness increases optical band gap was found to be increase. The water angle contact was found to be 34 o , suggesting hydrophilic nature of manganese sulfide thin films. The presence of Mn and S in thin film was confirmed by energy dispersive X-ray analysis

  20. Influence of the magnetic dead layer thickness of Mg-Zn ferrites nanoparticle on their magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayed, H.M. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt); Ali, I.A.; Azzam, A. [Nuclear Physics Department, Nuclear Research Center, Atomic Energy Authority (Egypt); Sattar, A.A. [Physics Department, Faculty of Science, Ain Shams University, Cairo (Egypt)

    2017-02-15

    Nanoparticle ferrite with chemical formula Mg{sub (1−x)}Zn{sub x}Fe{sub 2}O{sub 4} (where x=0.0, 0.2, 0.4, 0.6, 0.8 and 1) were prepared by sol-gel technique. Single phase structure of these ferrites was confirmed using X-ray diffraction (XRD). Transmission Electron Microscope (TEM) showed that the particle size of the samples in the range of (5.7–10.6 nm). The hysteresis studies showed superparamagnetic behaviour at room temperature. The magnetization behaviour with Zn-content is expressed in the light of Yafet-Kittel angles. The dead layer thickness (t) was calculated and its effect on the magnetization and magnetic losses was debated. The Specific Absorption Rate (SAR) in an alternating magnetic field with frequency 198 kHz for these ferrites has been studied. It is found that, the thickness of magnetic dead layer of the surface of the materials has greatly affected the SAR value of the samples. - Highlights: • Synthesis of Mg-Zn nanoparticle ferrite by sol-gel technique. • Methods of dead layer thickness calculation. • Magnetic behaviour explanation. • Relation between the Specific Absorption Rate, dead layer thickness and particle size.

  1. Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2012-03-15

    Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

  2. Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer

    Science.gov (United States)

    Kim, Sung Jin; Kim, Hyung Tae; Choi, Jong Hoon; Chung, Ho Kyoon; Cho, Sung Min

    2018-04-01

    An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional multilayer etch mask having all pattern information for the TFT. The sacrificial layer was applied in the SAIL process for the purpose of removing the resin residues that were inevitably left when the etch mask was thinned by plasma etching. This work demonstrated that the a-IGZO TFT could be fabricated by the SAIL process with the sacrificial layer. Specifically, the simple fabrication process utilized in this study can be utilized for the TFT with a plasma-sensitive semiconductor such as the a-IGZO and further extended for the roll-to-roll TFT fabrication.

  3. Determination of the thickness of chemically removed thin layers on GaAs VPE structures

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K.; Nemeth-Sallay, M.; Nemcsics, A. (Research Inst. for Technical Physics, Hungarian Academy of Sciences, Budapest (Hungary))

    1991-01-01

    Thinning of epitaxial GaAs layers was studied during the surface etching, with a special attention to submicron epitaxial structures, like MESFET or varactor-type structures. Each chemical treatment influences the crystal surface during the device preparation processes, though the possible thinning of the active layer is small. Therefore a method allowing determination of thicknesses as small as at about 20 nm of the layer removed by chemical etching from GaAs VPE structures was applied. Using special multilayered structures and a continuous electrochemical carrier concentration depth profiling, the influence of the layer thickness inhomogeneity and of some measurement errors can be minimized. Some frequently used etchants and the influence of different - so called - non-etching processes were compared in different combinations. It was shown that besides the direct etching a change of the surface conditions occurs, which influences the etch rate in the succeeding etching procedure. (orig.).

  4. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    International Nuclear Information System (INIS)

    Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

    2016-01-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  5. Evaluation of endothelial mucin layer thickness after phacoemulsification with next generation ophthalmic irrigating solution.

    Science.gov (United States)

    Ghate, Deepta A; Holley, Glenn; Dollinger, Harli; Bullock, Joseph P; Markwardt, Kerry; Edelhauser, Henry F

    2008-10-01

    To evaluate human corneal endothelial mucin layer thickness and ultrastructure after phacoemulsification and irrigation-aspiration with either next generation ophthalmic irrigating solution (NGOIS) or BSS PLUS. Paired human corneas were mounted in an artificial anterior chamber, exposed to 3 minutes of continuous ultrasound (US) at 80% power using the Alcon SERIES 20000 LEGACY surgical system (n = 9) or to 2 minutes of pulsed US at 50% power, 50% of the time at 20 pps using the Alcon INFINITI Vision System (n = 5), and irrigated with 250 mL of either NGOIS or BSS PLUS. A control group of paired corneas did not undergo phacoemulsification or irrigation-aspiration (n = 5). Corneas were divided and fixed for mucin staining or transmission electron microscopy. Mucin layer thickness was measured on the transmission electron microscopy prints. The mucin layer thickness in the continuous phaco group was 0.77 +/- 0.02 microm (mean +/- SE) with NGOIS and 0.51 +/- 0.01 microm with BSS PLUS (t test, P INFINITI Vision System (pulsed US) and the LEGACY surgical system (continuous US).

  6. Effects of LiF/Al back electrode on the amorphous/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sunbo; Lee, Jaehyeong; Dao, Vinh Ai; Lee, Seungho [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Balaji, Nagarajan [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Ahn, Shihyun [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Hussain, Shahzada Qamar [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Han, Sangmyeong [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jung, Junhee [Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Jang, Juyeon; Lee, Yunjung [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Yi, Junsin, E-mail: yi@yurim.skku.ac.kr [School of Information and Communication Engineering, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2013-05-15

    Highlights: ► We have employed a LiF dielectric layer as a new back-contact electrode. ► Increasing LiF thickness will decrease barrier for electrons transport, thus yield J{sub sc}. ► Increasing LiF thickness will reduced shunt leakage and enhanced internal field, thus yield V{sub oc}. ► Employing LiF layer, improvement of performance of HIT solar cells up to 17.13%. -- Abstract: To improve the quantum efficiency (QE) and hence the efficiency of the amorphous/crystalline silicon heterojunction solar cell, we have employed a LiF dielectric layer on the rear side. The high dipole moment of the LiF reduces the aluminum electrode's work–function and then lowers the energy barrier at back contact. This lower energy barrier height helps to enhance both the operating voltage and the QE at longer wavelength region, in turn improves the open-circuit voltage (V{sub oc}), short-circuit current density (J{sub sc}), and then overall cell efficiency. With optimized LiF layer thickness of 20 nm, 1 cm{sup 2} heterojunction with intrinsic thin layer (HIT) solar cells were produced with industry-compatible process, yielding V{sub oc} of 690 mV, J{sub sc} of 33.62 mA/cm{sup 2}, and cell efficiencies of 17.13%. Therefore LiF/Al electrode on rear side is proposed as an alternate back electrode for high efficiency HIT solar cells.

  7. Studies of pulsed laser melting and rapid solidification using amorphous silicon

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Wood, R.F.

    1984-06-01

    Pulsed-laser melting of ion implantation-amorphized silicon layers, and subsequent solidification were studied. Measurements of the onset of melting of amorphous silicon layers and of the duration of melting, and modified melting model calculations demonstrated that the thermal conductivity, K/sub a/, of amorphous silicon is very low (K/sub a/ approx. = 0.02 W/cm-K). K/sub a/ is also the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation. TEM indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model is presented. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. The bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or uv nanosecond laser pulses) cannot be explained using purely thermodynamic considerations

  8. Single versus double-layer uterine closure at cesarean: impact on lower uterine segment thickness at next pregnancy.

    Science.gov (United States)

    Vachon-Marceau, Chantale; Demers, Suzanne; Bujold, Emmanuel; Roberge, Stephanie; Gauthier, Robert J; Pasquier, Jean-Charles; Girard, Mario; Chaillet, Nils; Boulvain, Michel; Jastrow, Nicole

    2017-07-01

    Uterine rupture is a potential life-threatening complication during a trial of labor after cesarean delivery. Single-layer closure of the uterus at cesarean delivery has been associated with an increased risk of uterine rupture compared with double-layer closure. Lower uterine segment thickness measurement by ultrasound has been used to evaluate the quality of the uterine scar after cesarean delivery and is associated with the risk of uterine rupture. To estimate the impact of previous uterine closure on lower uterine segment thickness. Women with a previous single low-transverse cesarean delivery were recruited at 34-38 weeks' gestation. Transabdominal and transvaginal ultrasound evaluation of the lower uterine segment thickness was performed by a sonographer blinded to clinical data. Previous operative reports were reviewed to obtain the type of previous uterine closure. Third-trimester lower uterine segment thickness at the next pregnancy was compared according to the number of layers sutured and according to the type of thread for uterine closure, using weighted mean differences and multivariate logistic regression analyses. Of 1613 women recruited, with operative reports available, 495 (31%) had a single-layer and 1118 (69%) had a double-layer closure. The mean third-trimester lower uterine segment thickness was 3.3 ± 1.3 mm and the proportion with lower uterine segment thickness cesarean delivery is associated with a thicker third-trimester lower uterine segment and a reduced risk of lower uterine segment thickness <2.0 mm in the next pregnancy. The type of thread for uterine closure has no significant impact on lower uterine segment thickness. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  10. Modification of the laser triangulation method for measuring the thickness of optical layers

    Science.gov (United States)

    Khramov, V. N.; Adamov, A. A.

    2018-04-01

    The problem of determining the thickness of thin films by the method of laser triangulation is considered. An expression is derived for the film thickness and the distance between the focused beams on the photo detector. The possibility of applying the chosen method for measuring thickness is in the range [0.1; 1] mm. We could resolve 2 individual light marks for a minimum film thickness of 0.23 mm. We resolved with the help of computer processing of photos with a resolution of 0.10 mm. The obtained results can be used in ophthalmology for express diagnostics during surgical operations on the corneal layer.

  11. Spectroscopic ellipsometry characterization of amorphous and crystalline TiO{sub 2} thin films grown by atomic layer deposition at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: babaisps@rrcat.gov.in [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Ajimsha, R.S. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Rajiv, K.; Mukherjee, C. [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Gupta, M. [UGC-DAE Consortium, Indore Centre, Khandwa Road, Indore 452017 (India); Misra, P.; Kukreja, L.M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-10-01

    Highlights: • Refractive index was found to be increased from amorphous to the nanocrystalline films. • Refractive index was found to be inversely proportional with growth per cycle. • Large-grained anatase films showed lower refractive indices than the amorphous films. • Roughness was taken into consideration due to the columnar growths of crystalline films. - Abstract: TiO{sub 2} thin films of widely different structural and morphological characteristics were grown on Si (1 0 0) substrates using Atomic Layer Deposition (ALD) by varying the substrate temperature (T{sub s}) in a wide range (50 °C ≤ T{sub s} ≤ 400 °C). Spectroscopic ellipsometry (SE) measurements were carried out to investigate the effect of growth temperature on the optical properties of the films. Measured SE data were analyzed by considering double layer optical model for the sample together with the single oscillator Tauc-Lorentz dispersion relation. Surface roughness was taken into consideration due to the columnar growths of grains in crystalline films. The refractive index was found to be increased from amorphous (T{sub s} ≤ 150 °C) to the nanocrystalline films (250{sup 0} < T{sub s} ≤ 400 °C). The pronounced surface roughening for the large-grained anatase film obtained at the amorphous to crystalline phase transformation temperature of 200 °C, impeded SE measurement. The dispersions of refractive indices below the interband absorption edge were found to be strongly correlated with the single oscillator Wemple–DiDomenico (WD) model. The increase in dispersion energy parameter in WD model from disordered amorphous to the more ordered nanocrystalline films was found to be associated with the increase in the film density and coordination number.

  12. Ratiometric analysis of optical coherence tomography-measured in vivo retinal layer thicknesses for the detection of early diabetic retinopathy.

    Science.gov (United States)

    Bhaduri, Basanta; Shelton, Ryan L; Nolan, Ryan M; Hendren, Lucas; Almasov, Alexandra; Labriola, Leanne T; Boppart, Stephen A

    2017-11-01

    Influence of diabetes mellitus (DM) and diabetic retinopathy (DR) on parafoveal retinal thicknesses and their ratios was evaluated. Six retinal layer boundaries were segmented from spectral-domain optical coherence tomography images using open-source software. Five study groups: (1) healthy control (HC) subjects, and subjects with (2) controlled DM, (3) uncontrolled DM, (4) controlled DR and (5) uncontrolled DR, were identified. The one-way analyses of variance (ANOVA) between adjacent study groups (i. e. 1 with 2, 2 with 3, etc) indicated differences in retinal thicknesses and ratios. Overall retinal thickness, ganglion cell layer (GCL) thickness, inner plexiform layer (IPL) thickness, and their combination (GCL+ IPL), appeared to be significantly less in the uncontrolled DM group when compared to controlled DM and controlled DR groups. Although the combination of nerve fiber layer (NFL) and GCL, and IPL thicknesses were not different, their ratio, (NFL+GCL)/IPL, was found to be significantly higher in the controlled DM group compared to the HC group. Comparisons of the controlled DR group with the controlled DM group, and with the uncontrolled DR group, do not show any differences in the layer thicknesses, though several significant ratios were obtained. Ratiometric analysis may provide more sensitive parameters for detecting changes in DR. Picture: A representative segmented OCT image of the human retina is shown. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Laser generated guided waves and finite element modeling for the thickness gauging of thin layers.

    Science.gov (United States)

    Lefevre, F; Jenot, F; Ouaftouh, M; Duquennoy, M; Ourak, M

    2010-03-01

    In this paper, nondestructive testing has been performed on a thin gold layer deposited on a 2 in. silicon wafer. Guided waves were generated and studied using a laser ultrasonic setup and a two-dimensional fast Fourier transform technique was employed to obtain the dispersion curves. A gold layer thickness of 1.33 microm has been determined with a +/-5% margin of error using the shape of the two first propagating modes, assuming for the substrate and the layer an uncertainty on the elastic parameters of +/-2.5%. A finite element model has been implemented to validate the data post-treatment and the experimental results. A good agreement between the numerical simulation, the analytical modeling and the experimentations has been observed. This method was considered suitable for thickness layer higher than 0.7 microm.

  14. Fe based amorphous and compounds metallic alloys for magnetic and structural use

    International Nuclear Information System (INIS)

    Lavorato, G; Bassi, F; De Rosa, H; Moya, J

    2008-01-01

    Massive amorphous metals (thicker than 1mm) are new types of material that could have a wide range of future applications due to a unique combination of their physical properties, mechanics and magnetics. Among these are the elevated tension of fracture and hardness, and excellent soft magnetic properties. Since 1960, when an amorphous metallic alloy was first discovered, progress has continued on the application possibilities for these materials. One of their main limitations, maximum obtainable thickness, has continued to increase, since at first thicknesses of a few microns were obtained. Now amorphous alloys more than 70 mm thick are obtained using different metallic elements. Since 1995 massive amorphous metals can be produced using Fe as the base element. At first they were made in order to achieve good soft magnetic properties (thicknesses of ∼5 mm) and later a renewed interest in their use as structural material led to the development of materials with thicknesses of 16 mm and paramagnetics at room temperature. Increasing the toughness of these materials is also a challenge and investigators have proposed several solutions, among them is the development of composite materials where dendrites from a solid solution act as crack stoppers of fissures that are spread by an amorphous matrix. This work presents the results of studies with two types of synthesized materials using the rapid cooling technique from injection copper mold casting at air temperature: 1) a massive amorphous metallic alloy with composition (Fe 0.375 Co 0 .375 B 0.2 Si 0.05 )96Nb 4 (at.%) and 2) a composite of solid solution dendrites α-(FeCo) scattered in an amorphous matrix with a composition similar to alloy 1. Using the samples obtained structural studies were made (optic and electronic microscopy SEM, XRD, EDAX, DTA), magnetic studies (coercive field and saturation magnetization) and mechanical studies (Vickers microhardness). The fully amorphous alloy could be obtained with a

  15. Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

    Science.gov (United States)

    Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

    2012-04-01

    Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

  16. TEM study of amorphous alloys produced by ion implantation

    International Nuclear Information System (INIS)

    Johnson, E.; Grant, W.A.; Wohlenberg, P.; Hansen, P.; Chadderton, L.T.

    1978-01-01

    Ion implantation is a technique for introducing foreign elements into surface layers of solids. Ions, as a suitably accelerated beam, penetrate the surface, slow down by collisions with target atoms to produce a doped layer. This non-equilibrium technique can provide a wide range of alloys without the restrictions imposed by equilibrium phase diagrams. This paper reports on the production of some amorphous transition metal-metalloid alloys by implantation. Thinned foils of Ni, Fe and stainless steel were implanted at room temperature with Dy + and P + ions at doses between 10 13 - 10 17 ions/cm 2 at energies of 20 and 40 keV respectively. Transmission electron microscopy and selected area diffraction analysis were used to investigate the implanted specimens. Radial diffracted intensity measurements confirmed the presence of an amorphous implanted layer. The peak positions of the maxima are in good agreement with data for similar alloys produced by conventional techniques. Only certain ion/target combinations produce these amorphous layers. Implantations at doses lower than those needed for amorphization often result in formation of new crystalline phases such as an h.c.p. phase in nickel and a b.c.c. phase in stainless steel. (Auth.)

  17. Infrared analysis of thin films: amorphous, hydrogenated carbon on silicon

    International Nuclear Information System (INIS)

    Jacob, Wolfgang; Keudell, Achim von; Schwarz-Selinger, Thomas

    2000-01-01

    The infrared analysis of thin films on a thick substrate is discussed using the example of plasma-deposited, amorphous, hydrogenated carbon layers (a-C:H) on silicon substrates. The framework for the optical analysis of thin films is presented. The main characteristic of thin film optics is the occurrence of interference effects due to the coherent superposition of light multiply reflected at the various internal and external interfaces of the optical system. These interference effects lead to a sinusoidal variation of the transmitted and reflected intensity. As a consequence, the Lambert-Beer law is not applicable for the determination of the absorption coefficient of thin films. Furthermore, observable changes of the transmission and reflection spectra occur in the vicinity of strong absorption bands due to the Kramers-Kronig relation. For a sound data evaluation these effects have to be included in the analysis. To be able to extract the full information contained in a measured optical thin film spectrum, an experimentally measured spectrum has to be simulated using the full formalism including the Kramers-Kronig relation. Infrared absorption spectra and the resulting k spectra in the range of the CH vibrational bands around 3000 cm -1 are presented for a variety of a-C:H layers. The shape and the total intensity of the peak are quite sensitive to the film structure. Soft, polymerlike hydrocarbon layers are characterized by a well structured, intense IR absorption band, while hard, amorphous, hydrogenated carbon layers exhibit a structureless, broad IR absorption band with relative low intensity. The k spectra of the CH vibrational bands can be considered as fingerprint for the type of a-C:H film. (author)

  18. Ta thickness-dependent perpendicular magnetic anisotropy features in Ta/CoFeB/MgO/W free layer stacks

    Energy Technology Data Exchange (ETDEWEB)

    Yang, SeungMo; Lee, JaBin; An, GwangGuk [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Kim, JaeHong [Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, WooSeong [Nano Quantum Electronics Lab, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, JinPyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-07-31

    We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotropy in Ta/CoFeB/MgO/W stacks. It is believed that thermal stability based on Ta underlay is associated with thermally-activated Ta atom diffusion during annealing. The difference in Ta thickness-dependent diffusion behaviors was confirmed with X-ray photoelectron spectroscopy analysis. Along with a feasible Ta thickness model, our observations suggest that an appropriate seed layer choice is needed for high temperature annealing stability, a critical issue in the memory industry. - Highlights: • We observed changes in the diffusion behavior with regard to Ta seed layer thickness. • It was observed that a thinner Ta seed layer induced more annealing-stable features. • However, ultra-thin (0.75 nm) Ta shows unstable characteristics about the annealing process. • It was possibly due to a rugged interface of the Ta layer by the island growth process.

  19. Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates

    International Nuclear Information System (INIS)

    Zhuang Huihui; Yan Jinliang; Xu Chengyang; Meng Delan

    2014-01-01

    Cu and Cu/ITO films were prepared on polyethylene terephthalate (PET) substrates with a Ga 2 O 3 buffer layer using radio frequency (RF) and direct current (DC) magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga 2 O 3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu(4.2 nm)/ITO(30 nm) films were investigated with respect to the Ga 2 O 3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga 2 O 3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10 −3 Ω −1 were achieved for Cu(4.2 nm)/ITO(30 nm) films with a Ga 2 O 3 layer thickness of 15 nm. (semiconductor materials)

  20. Photoelectrochemical properties of N-doped self-organized titania nanotube layers with different thicknesses

    OpenAIRE

    Macak, Jan M.; Ghicov, Andrei; Hahn, Robert; Tsuchiya, Hiroaki; Schmuki, Patrik

    2013-01-01

    The present work reports nitrogen doping of self-organized TiO2 nanotubular layers. Different thicknesses of the nanotubular layer architecture were formed by electrochemical anodization of Ti in different fluoride-containing electrolytes; tube lengths were 500 nm, 2.5 μm, and 6.1 μm. As-formed nanotube layers were annealed to an anatase structure and treated in ammonia environment at 550 °C to achieve nitrogen doping. The crystal structure, morphology, composition and photoresponse of the N-...

  1. Macular Ganglion Cell Inner Plexiform Layer Thickness in Glaucomatous Eyes with Localized Retinal Nerve Fiber Layer Defects.

    Directory of Open Access Journals (Sweden)

    Chunwei Zhang

    Full Text Available To investigate macular ganglion cell-inner plexiform layer (mGCIPL thickness in glaucomatous eyes with visible localized retinal nerve fiber layer (RNFL defects on stereophotographs.112 healthy and 149 glaucomatous eyes from the Diagnostic Innovations in Glaucoma Study (DIGS and the African Descent and Glaucoma Evaluation Study (ADAGES subjects had standard automated perimetry (SAP, optical coherence tomography (OCT imaging of the macula and optic nerve head, and stereoscopic optic disc photography. Masked observers identified localized RNFL defects by grading of stereophotographs.47 eyes had visible localized RNFL defects on stereophotographs. Eyes with visible localized RNFL defects had significantly thinner mGCIPL thickness compared to healthy eyes (68.3 ± 11.4 μm versus 79.2 ± 6.6 μm respectively, P<0.001 and similar mGCIPL thickness to glaucomatous eyes without localized RNFL defects (68.6 ± 11.2 μm, P = 1.000. The average mGCIPL thickness in eyes with RNFL defects was 14% less than similarly aged healthy controls. For 29 eyes with a visible RNFL defect in just one hemiretina (superior or inferior mGCIPL was thinnest in the same hemiretina in 26 eyes (90%. Eyes with inferior-temporal RNFL defects also had significantly thinner inferior-temporal mGCIPL (P<0.001 and inferior mGCIPL (P = 0.030 compared to glaucomatous eyes without a visible RNFL defect.The current study indicates that presence of a localized RNFL defect is likely to indicate significant macular damage, particularly in the region of the macular that topographically corresponds to the location of the RNFL defect.

  2. Ion-induced damage and amorphization in Si

    International Nuclear Information System (INIS)

    Holland, O.W.; White, C.W.

    1990-01-01

    Ion-induced damage growth in high-energy, self-ion irradiated Si was studied using electron microscopy and Rutherford backscattering spectroscopy. The results show that there is a marked variation in the rate of damage growth, as well as the damage morphology, along the path of the ion. Near the ion end-of-range (eor), damage increases monotonically with ion fluence until a buried amorphous layer is formed, while damage growth saturates at a low level in the region ahead. The morphology of the damage in the saturated region is shown to consist predominantly of simple defect clusters such as the divacancy. Damage growth remains saturated ahead of the eor until expansion of the buried amorphous layer encroaches into the region. A homogeneous growth model is presented which accounts for damage saturation, and accurately predicts the dose-rate dependence of the saturation level. Modifications of the model are discussed which are needed to account for the rapid growth in the eor region and near the interface of the buried amorphous layer. Two important factors contributing to rapid damage growth are identified. Spatial separation of the Frenkel defect pairs (i.e. interstitials and vacancies) due to the momentum of the interstitials is shown to greatly impact damage growth near the eor, while uniaxial strain in the interfacial region of the amorphous layer is identified as an important factor contributing to growth at that location. 20 refs., 10 figs

  3. CoFe Layers Thickness and Annealing Effect on the Magnetic Behavior of the CoFe/Cu Multilayer Nanowires

    Directory of Open Access Journals (Sweden)

    M. Ahmadzadeh

    2015-04-01

    Full Text Available CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled through the pulses numbers: 200, 260, 310,360 and 410 pulses were used to deposit the CoFe layers, while 300 pulse for the Cu layers. A certain increase in coercivity and squareness of CoFe/Cu multilayer nanowires observed with increasing the CoFe layer thickness and annealing improved the coercivity and decrease squareness of CoFe/Cu multilayer nanowires. First order reversal curves after annealed showed amount domains with soft magnetic phase, it also shows decreasing spreading of distribution function along the Hu axis after annealed

  4. Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting

    Directory of Open Access Journals (Sweden)

    Shuo Wang

    2017-09-01

    Full Text Available Selective laser melting (SLM is a potential additive manufacturing (AM technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm3/s, which is about 3–10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research.

  5. Research on High Layer Thickness Fabricated of 316L by Selective Laser Melting.

    Science.gov (United States)

    Wang, Shuo; Liu, Yude; Shi, Wentian; Qi, Bin; Yang, Jin; Zhang, Feifei; Han, Dong; Ma, Yingyi

    2017-09-08

    Selective laser melting (SLM) is a potential additive manufacturing (AM) technology. However, the application of SLM was confined due to low efficiency. To improve efficiency, SLM fabrication with a high layer thickness and fine powder was systematically researched, and the void areas and hollow powders can be reduced by using fine powder. Single-track experiments were used to narrow down process parameter windows. Multi-layer fabrication relative density can be reached 99.99% at the exposure time-point distance-hatch space of 120 μs-40 μm-240 μm. Also, the building rate can be up to 12 mm³/s, which is about 3-10 times higher than the previous studies. Three typical defects were found by studying deeply, including the un-melted defect between the molten pools, the micro-pore defect within the molten pool, and the irregular distribution of the splashing phenomenon. Moreover, the microstructure is mostly equiaxed crystals and a small amount of columnar crystals. The averages of ultimate tensile strength, yield strength, and elongation are 625 MPa, 525 MPa, and 39.9%, respectively. As exposure time increased from 80 μs to 200 μs, the grain size is gradually grown up from 0.98 μm to 2.23 μm, the grain aspect ratio is close to 1, and the tensile properties are shown as a downward trend. The tensile properties of high layer thickness fabricated are not significantly different than those with a coarse-powder layer thickness of low in previous research.

  6. Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

    1994-10-01

    We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

  7. Fabrication of tubed functionally graded material by slurry dipping process. Thickness control of dip-coated layer

    International Nuclear Information System (INIS)

    Watanabe, Ryuzo

    1997-03-01

    In order to obtain long life fuel cladding tubes for the fast breeder reactor, the concept of functionally graded material was applied for the material combination of Molybdenum/stainless steel/Titanium, in which Titanium and Molybdenum were placed at the inner and outer sides, respectively. Slurry dipping method was employed because of its capability of shape forming and microstructural control. We have hitherto reported the design criteria for the graded layers, preparation of the slurry, and microstructural control of the dip-coated layers. In the present report, the thickness control of the dip-coated layer is described in detail. The thickness of the dip-coated layer depends primarily on the viscosity of the slurry. Nevertheless, for the stable dispersion of the powder in the slurry, which dominates the microstructural homogeneity, an optimum viscosity value is present for the individual slurries. With stable slurries of Ti, Mo, stainless steel powders and their mixtures, the thicknesses of dip-coated layers were controlled in dependence of their viscosities and yield values. For Ti and stainless steel powders and their mixture a PAANa was used as a dispersing agent. A NaHMP was found to be effective for the dispersion of Mo powder and Mo/stainless steel powder mixture. For all slurries tested in the present investigation PVA addition was helpful for the viscosity control. Dip-coating maps have been drawn for the stabilization of the slurries and for the formation of films with a sufficient strength for further manipulation for the slurries with low viscosity (∼10 mPa s). The final film thickness for the low-viscosity slurry with the optimum condition was about 200 μm. The slurries with high viscosities of several hundreds mPa s had a good stability and the yield value was easy to be controlled. The film thickness was able to be adjusted in the size range between several tens and several hundreds μm. The final thickness of the graded layer was determined

  8. Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO2/Au resistive random access memory device

    Science.gov (United States)

    Nakajima, Ryo; Azuma, Atsushi; Yoshida, Hayato; Shimizu, Tomohiro; Ito, Takeshi; Shingubara, Shoso

    2018-06-01

    Resistive random access memory (ReRAM) devices with a HfO2 dielectric layer have been studied extensively owing to the good reproducibility of their SET/RESET switching properties. Furthermore, it was reported that a thin Hf layer next to a HfO2 layer stabilized switching properties because of the oxygen scavenging effect. In this work, we studied the Hf thickness dependence of the resistance switching characteristics of a Ti/Hf/HfO2/Au ReRAM device. It is found that the optimum Hf thickness is approximately 10 nm to obtain good reproducibility of SET/RESET voltages with a small RESET current. However, when the Hf thickness was very small (∼2 nm), the device failed after the first RESET process owing to the very large RESET current. In the case of a very thick Hf layer (∼20 nm), RESET did not occur owing to the formation of a leaky dielectric layer. We observed the occurrence of multiple resistance states in the RESET process of the device with a Hf thickness of 10 nm by increasing the RESET voltage stepwise.

  9. Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography

    Science.gov (United States)

    Higashide, Tomomi; Ohkubo, Shinji; Hangai, Masanori; Ito, Yasuki; Shimada, Noriaki; Ohno-Matsui, Kyoko; Terasaki, Hiroko; Sugiyama, Kazuhisa; Chew, Paul; Li, Kenneth K. W.; Yoshimura, Nagahisa

    2016-01-01

    Purpose To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects. Methods The thickness of retinal layers {retinal nerve fiber layer (RNFL), ganglion cell layer plus inner plexiform layer (GCLIPL), RNFL plus GCLIPL (ganglion cell complex, GCC), total retina, total retina minus GCC (outer retina)} were measured by macular scans (RS-3000, NIDEK) in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters) with or without magnification correction. For each layer thickness, a semipartial correlation (sr) was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index. Results Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13) regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33) and a negative sr with GCLIPL (sr2, 0.22 to 0.31), GCC (sr2, 0.03 to 0.17), total retina (sr2, 0.07 to 0.17) and outer retina (sr2, 0.16 to 0.29) in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction. Conclusions The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction. PMID:26814541

  10. Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography.

    Directory of Open Access Journals (Sweden)

    Tomomi Higashide

    Full Text Available To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects.The thickness of retinal layers {retinal nerve fiber layer (RNFL, ganglion cell layer plus inner plexiform layer (GCLIPL, RNFL plus GCLIPL (ganglion cell complex, GCC, total retina, total retina minus GCC (outer retina} were measured by macular scans (RS-3000, NIDEK in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters with or without magnification correction. For each layer thickness, a semipartial correlation (sr was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index.Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13 regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33 and a negative sr with GCLIPL (sr2, 0.22 to 0.31, GCC (sr2, 0.03 to 0.17, total retina (sr2, 0.07 to 0.17 and outer retina (sr2, 0.16 to 0.29 in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction.The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction.

  11. Influence of Clinical Factors and Magnification Correction on Normal Thickness Profiles of Macular Retinal Layers Using Optical Coherence Tomography.

    Science.gov (United States)

    Higashide, Tomomi; Ohkubo, Shinji; Hangai, Masanori; Ito, Yasuki; Shimada, Noriaki; Ohno-Matsui, Kyoko; Terasaki, Hiroko; Sugiyama, Kazuhisa; Chew, Paul; Li, Kenneth K W; Yoshimura, Nagahisa

    2016-01-01

    To identify the factors which significantly contribute to the thickness variabilities in macular retinal layers measured by optical coherence tomography with or without magnification correction of analytical areas in normal subjects. The thickness of retinal layers {retinal nerve fiber layer (RNFL), ganglion cell layer plus inner plexiform layer (GCLIPL), RNFL plus GCLIPL (ganglion cell complex, GCC), total retina, total retina minus GCC (outer retina)} were measured by macular scans (RS-3000, NIDEK) in 202 eyes of 202 normal Asian subjects aged 20 to 60 years. The analytical areas were defined by three concentric circles (1-, 3- and 6-mm nominal diameters) with or without magnification correction. For each layer thickness, a semipartial correlation (sr) was calculated for explanatory variables including age, gender, axial length, corneal curvature, and signal strength index. Outer retinal thickness was significantly thinner in females than in males (sr2, 0.07 to 0.13) regardless of analytical areas or magnification correction. Without magnification correction, axial length had a significant positive sr with RNFL (sr2, 0.12 to 0.33) and a negative sr with GCLIPL (sr2, 0.22 to 0.31), GCC (sr2, 0.03 to 0.17), total retina (sr2, 0.07 to 0.17) and outer retina (sr2, 0.16 to 0.29) in multiple analytical areas. The significant sr in RNFL, GCLIPL and GCC became mostly insignificant following magnification correction. The strong correlation between the thickness of inner retinal layers and axial length appeared to result from magnification effects. Outer retinal thickness may differ by gender and axial length independently of magnification correction.

  12. The Effect of LASIK Procedure on Peripapillary Retinal Nerve Fiber Layer and Macular Ganglion Cell-Inner Plexiform Layer Thickness in Myopic Eyes

    Directory of Open Access Journals (Sweden)

    Maja Zivkovic

    2017-01-01

    Full Text Available Purpose. To evaluate the effect of applied suction during microkeratome-assisted laser in situ keratomileusis (LASIK procedure on peripapillary retinal nerve fiber layer (RNFL thickness as well as macular ganglion cell-inner plexiform layer (GC-IPL thickness. Methods. 89 patients (124 eyes with established myopia range from −3.0 to −8.0 diopters and no associated ocular diseases were included in this study. RNFL and GC-IPL thickness measurements were performed by spectral domain optical coherence tomography (SD OCT one day before LASIK and at 1 and 6 months postoperatively. Results. Mean RNFL thickness prior to LASIK was 93.86±12.17 μm while the first month and the sixth month postoperatively were 94.01±12.04 μm and 94.46±12.27 μm, respectively. Comparing results, there is no significant difference between baseline, one month, and six months postoperatively for mean RNFL (p>0.05. Mean GC-IPL thickness was 81.70±7.47 μm preoperatively with no significant difference during the follow-up period (82.03±7.69 μm versus 81.84±7.64 μm; p>0.05. Conclusion. RNFL and GC-IPL complex thickness remained unaffected following LASIK intervention.

  13. Relationship between Outer Retinal Layers Thickness and Visual Acuity in Diabetic Macular Edema

    Directory of Open Access Journals (Sweden)

    Raymond L. M. Wong

    2015-01-01

    Full Text Available Purpose. To investigate the correlation of outer retinal layers (ORL thickness and visual acuity (VA in patients with diabetic macular edema (DME. Methods. Consecutive DME patients seen at the Retina Clinic of The University of Hong Kong were recruited for OCT assessment. The ORL thickness was defined as the distance between external limiting membrane (ELM and retinal pigment epithelium (RPE at the foveal center. The correlation between total retinal thickness, ORL thickness, and vision was calculated. Results. 78 patients with DME were recruited. The mean age was 58.1 years (±11.5 years and their mean visual acuity measured with Snellen chart was 0.51 (±0.18. The correlation coefficient between total retinal thickness and visual acuity was 0.34 (P < 0.001 whereas the correlation coefficient was 0.65 between ORL thickness and visual acuity (P < 0.001. Conclusion. ORL thickness correlates better with vision than the total retinal thickness. It is a novel OCT parameter in the assessment of DME. Moreover, it could be a potential long term visual prognostic factor for patients with DME.

  14. Non-Toxic Buffer Layers in Flexible Cu(In,GaSe2 Photovoltaic Cell Applications with Optimized Absorber Thickness

    Directory of Open Access Journals (Sweden)

    Md. Asaduzzaman

    2017-01-01

    Full Text Available Absorber layer thickness gradient in Cu(In1−xGaxSe2 (CIGS based solar cells and several substitutes for typical cadmium sulfide (CdS buffer layers, such as ZnS, ZnO, ZnS(O,OH, Zn1−xSnxOy (ZTO, ZnSe, and In2S3, have been analyzed by a device emulation program and tool (ADEPT 2.1 to determine optimum efficiency. As a reference type, the CIGS cell with CdS buffer provides a theoretical efficiency of 23.23% when the optimum absorber layer thickness was determined as 1.6 μm. It is also observed that this highly efficient CIGS cell would have an absorber layer thickness between 1 μm and 2 μm whereas the optimum buffer layer thickness would be within the range of 0.04–0.06 μm. Among all the cells with various buffer layers, the best energy conversion efficiency of 24.62% has been achieved for the ZnO buffer layer based cell. The simulation results with ZnS and ZnO based buffer layer materials instead of using CdS indicate that the cell performance would be better than that of the CdS buffer layer based cell. Although the cells with ZnS(O,OH, ZTO, ZnSe, and In2S3 buffer layers provide slightly lower efficiencies than that of the CdS buffer based cell, the use of these materials would not be deleterious for the environment because of their non-carcinogenic and non-toxic nature.

  15. Effect of etching stop layer on characteristics of amorphous IGZO thin film transistor fabricated at low temperature

    Directory of Open Access Journals (Sweden)

    Xifeng Li

    2013-03-01

    Full Text Available Transparent bottom-gate amorphous Indium-Gallium-Zinc Oxide (a-IGZO thin-film transistors (TFTs had been successfully fabricated at relative low temperature. The influence of reaction gas ratio of N2O and SiH4 during the growth of etching stop layer (SiOx on the characteristics of a-IGZO TFTs was investigated. The transfer characteristics of the TFTs were changed markedly because active layer of a-IGZO films was modified by plasma in the growth process of SiOx. By optimizing the deposition parameters of etching stop layer process, a-IGZO TFTs were manufactured and exhibited good performance with a field-effect mobility of 8.5 cm2V-1s-1, a threshold voltage of 1.3 V, and good stability under gate bias stress of 20 V for 10000 s.

  16. Determination of thickness of thin turbid painted over-layers using micro-scale spatially offset Raman spectroscopy

    Science.gov (United States)

    Conti, Claudia; Realini, Marco; Colombo, Chiara; Botteon, Alessandra; Bertasa, Moira; Striova, Jana; Barucci, Marco; Matousek, Pavel

    2016-12-01

    We present a method for estimating the thickness of thin turbid layers using defocusing micro-spatially offset Raman spectroscopy (micro-SORS). The approach, applicable to highly turbid systems, enables one to predict depths in excess of those accessible with conventional Raman microscopy. The technique can be used, for example, to establish the paint layer thickness on cultural heritage objects, such as panel canvases, mural paintings, painted statues and decorated objects. Other applications include analysis in polymer, biological and biomedical disciplines, catalytic and forensics sciences where highly turbid overlayers are often present and where invasive probing may not be possible or is undesirable. The method comprises two stages: (i) a calibration step for training the method on a well characterized sample set with a known thickness, and (ii) a prediction step where the prediction of layer thickness is carried out non-invasively on samples of unknown thickness of the same chemical and physical make up as the calibration set. An illustrative example of a practical deployment of this method is the analysis of larger areas of paintings. In this case, first, a calibration would be performed on a fragment of painting of a known thickness (e.g. derived from cross-sectional analysis) and subsequently the analysis of thickness across larger areas of painting could then be carried out non-invasively. The performance of the method is compared with that of the more established optical coherence tomography (OCT) technique on identical sample set. This article is part of the themed issue "Raman spectroscopy in art and archaeology".

  17. Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

    International Nuclear Information System (INIS)

    Das, D; Gopikrishna, P; Singh, A; Dey, A; Iyer, P K

    2016-01-01

    Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (R P ) and the parallel capacitance (C P ). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m 2 . (paper)

  18. Amorphous TiO2 Shells: A Vital Elastic Buffering Layer on Silicon Nanoparticles for High-Performance and Safe Lithium Storage.

    Science.gov (United States)

    Yang, Jianping; Wang, Yunxiao; Li, Wei; Wang, Lianjun; Fan, Yuchi; Jiang, Wan; Luo, Wei; Wang, Yang; Kong, Biao; Selomulya, Cordelia; Liu, Hua Kun; Dou, Shi Xue; Zhao, Dongyuan

    2017-12-01

    Smart surface coatings of silicon (Si) nanoparticles are shown to be good examples for dramatically improving the cyclability of lithium-ion batteries. Most coating materials, however, face significant challenges, including a low initial Coulombic efficiency, tedious processing, and safety assessment. In this study, a facile sol-gel strategy is demonstrated to synthesize commercial Si nanoparticles encapsulated by amorphous titanium oxide (TiO 2 ), with core-shell structures, which show greatly superior electrochemical performance and high-safety lithium storage. The amorphous TiO 2 shell (≈3 nm) shows elastic behavior during lithium discharging and charging processes, maintaining high structural integrity. Interestingly, it is found that the amorphous TiO 2 shells offer superior buffering properties compared to crystalline TiO 2 layers for unprecedented cycling stability. Moreover, accelerating rate calorimetry testing reveals that the TiO 2 -encapsulated Si nanoparticles are safer than conventional carbon-coated Si-based anodes. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Influences of layer thickness on the compatibility and physical properties of polycarbonate/polystyrene multilayered film via nanolayer coextrusion

    Science.gov (United States)

    Cheng, Junfeng; Chen, Zhiru; Zhou, Jiaqi; Cao, Zheng; Wu, Dun; Liu, Chunlin; Pu, Hongting

    2018-05-01

    The effects of layer thickness on the compatibility between polycarbonate (PC) and polystyrene (PS) and physical properties of PC/PS multilayered film via nanolayer coextrusion are studied. The morphology of multilayered structure is observed using a scanning electron microscope. This multilayered structure may have a negative impact on the transparency, but it can improve the water resistance and heat resistance of film. To characterize the compatibility between PC and PS, differential scanning calorimetry is used to measure the glass transition temperature. The compatibility is found to be improved with the decrease of layer thickness. Therefore, the viscosity of multilayered film is also reduced with the decrease of layer thickness. In addition, the multilayered structure can improve the tensile strength with the increase of layer numbers. Because of the complete and continuous layer structure of PC, the PC/PS multilayered film can retain its mechanical strength at the temperature above Tg of PS.

  20. Adsorbed polymers in aqueous media. The relation between zeta-potential, layer thickness and ionic strength

    NARCIS (Netherlands)

    Cohen Stuart, M.A.; Mulder, J.W.

    1985-01-01

    Streaming potentials for glass capillaries with and without adsorbed poly(vinyl pyrrolidone) were used to determine the thickness of the adsorbed polymer layer. It was found that the thickness determined in this way is a strong function of the ionic strength of the solution. The results are compared

  1. Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

    Science.gov (United States)

    Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

    2015-06-30

    In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

  2. Impact of active layer thickness of nitrogen-doped In–Sn–Zn–O films on materials and thin film transistor performances

    Science.gov (United States)

    Li, Zhi-Yue; Yang, Hao-Zhi; Chen, Sheng-Chi; Lu, Ying-Bo; Xin, Yan-Qing; Yang, Tian-Lin; Sun, Hui

    2018-05-01

    Nitrogen-doped indium tin zinc oxide (ITZO:N) thin film transistors (TFTs) were deposited on SiO2 (200 nm)/p-Si〈1 0 0〉 substrates by RF magnetron sputtering at room temperature. The structural, chemical compositions, surface morphology, optical and electrical properties as a function of the active layer thickness were investigated. As the active layer thickness increases, Zn content decreases and In content increases gradually. Meanwhile, Sn content is almost unchanged. When the thickness of the active layer is more than 45 nm, the ITZO:N films become crystallized and present a crystal orientation along InN(0 0 2) plan. No matter what the thickness is, ITZO:N films always display a high transmittance above 80% in the visible region. Their optical band gaps fluctuate between 3.4 eV and 3.62 eV. Due to the dominance of low interface trap density and high carrier concentration, ITZO:N TFT shows enhanced electrical properties as the active layer thickness is 35 nm. Its field-effect mobility, on/off radio and sub-threshold swing are 17.53 cm2 V‑1 · s‑1, 106 and 0.36 V/dec, respectively. These results indicate that the suitable thickness of the active layer can enhance the quality of ITZO:N films and decrease the defects density of ITZO:N TFT. Thus, the properties of ITZO:N TFT can be optimized by adjusting the thickness of the active layer.

  3. Growth optimization for thick crack-free GaN layers on sapphire with HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Richter, E.; Hennig, Ch.; Kissel, H.; Sonia, G.; Zeimer, U.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, 12489 Berlin (Germany)

    2005-05-01

    Conditions for optimized growth of thick GaN layers with crack-free surfaces by HVPE are reported. It was found that a 1:1 mixture of H{sub 2}/N{sub 2} as carrier gas leads to the lowest density of cracks in the surface. Crack formation also depends on the properties of the GaN/sapphire templates used. Best results have been obtained for 5 {mu}m thick GaN/sapphire templates grown by MOVPE with medium compressive strain {epsilon}{sub zz} of about 0.05%. But there is no simple dependence of the crack formation on the strain status of the starting layer indicating that the HVPE growth of GaN can itself introduce strong tensile strain. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. RNA-Seq reveals seven promising candidate genes affecting the proportion of thick egg albumen in layer-type chickens.

    Science.gov (United States)

    Wan, Yi; Jin, Sihua; Ma, Chendong; Wang, Zhicheng; Fang, Qi; Jiang, Runshen

    2017-12-22

    Eggs with a much higher proportion of thick albumen are preferred in the layer industry, as they are favoured by consumers. However, the genetic factors affecting the thick egg albumen trait have not been elucidated. Using RNA sequencing, we explored the magnum transcriptome in 9 Rhode Island white layers: four layers with phenotypes of extremely high ratios of thick to thin albumen (high thick albumen, HTA) and five with extremely low ratios (low thick albumen, LTA). A total of 220 genes were differentially expressed, among which 150 genes were up-regulated and 70 were down-regulated in the HTA group compared with the LTA group. Gene Ontology (GO) analysis revealed that the up-regulated genes in HTA were mainly involved in a wide range of regulatory functions. In addition, a large number of these genes were related to glycosphingolipid biosynthesis, focal adhesion, ECM-receptor interactions and cytokine-cytokine receptor interactions. Based on functional analysis, ST3GAL4, FUT4, ITGA2, SDC3, PRLR, CDH4 and GALNT9 were identified as promising candidate genes for thick albumen synthesis and metabolism during egg formation. These results provide new insights into the molecular mechanisms of egg albumen traits and may contribute to future breeding strategies that optimise the proportion of thick egg albumen.

  5. Photoemission studies of amorphous silicon induced by P + ion implantation

    Science.gov (United States)

    Petö, G.; Kanski, J.

    1995-12-01

    An amorphous Si layer was formed on a Si (1 0 0) surface by P + implantation at 80 keV. This layer was investigated by means of photoelectron spectroscopy. The resulting spectra are different from earlier spectra on amorphous Si prepared by e-gun evaporation or cathode sputtering. The differences consist of a decreased intensity in the spectral region corresponding to p-states, and appearace of new states at higher binding energy. Qualitativity similar results have been reported for Sb implanted amorphous Ge and the modification seems to be due to the changed short range order.

  6. Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting.

    Science.gov (United States)

    Kao, Ming-Hsuan; Shen, Chang-Hong; Yu, Pei-Chen; Huang, Wen-Hsien; Chueh, Yu-Lun; Shieh, Jia-Min

    2017-10-05

    A p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC:H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V OC , J SC and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of ~9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 μW/cm 2 . Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).

  7. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

    Science.gov (United States)

    Ning, Honglong; Chen, Jianqiu; Fang, Zhiqiang; Tao, Ruiqiang; Cai, Wei; Yao, Rihui; Hu, Shiben; Zhu, Zhennan; Zhou, Yicong; Yang, Caigui; Peng, Junbiao

    2017-01-10

    Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance. In this paper, silver (Ag) source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm²·V -1 ·s -1 and an on/off current ratio of over 10⁵. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

  8. Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Honglong Ning

    2017-01-01

    Full Text Available Printing technologies for thin-film transistors (TFTs have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium–gallium–zinc–oxide (a-IGZO TFTs with good electrical performance. In this paper, silver (Ag source/drain electrodes were directly inkjet-printed on an amorphous a-IGZO layer to fabricate TFTs that exhibited a mobility of 0.29 cm2·V−1·s−1 and an on/off current ratio of over 105. To the best of our knowledge, this is a major improvement for bottom-gate top-contact a-IGZO TFTs with directly printed silver electrodes on a substrate with no pretreatment. This study presents a promising alternative method of fabricating electrodes of a-IGZO TFTs with desirable device performance.

  9. Chip-scale pattern modification method for equalizing residual layer thickness in nanoimprint lithography

    Science.gov (United States)

    Youn, Sung-Won; Suzuki, Kenta; Hiroshima, Hiroshi

    2018-06-01

    A software program for modifying a mold design to obtain a uniform residual layer thickness (RLT) distribution has been developed and its validity was verified by UV-nanoimprint lithography (UV-NIL) simulation. First, the effects of granularity (G) on both residual layer uniformity and filling characteristics were characterized. For a constant complementary pattern depth and a granularity that was sufficiently larger than the minimum pattern width, filling time decreased with the decrease in granularity. For a pattern design with a wide density range and an irregular distribution, the choice of a small granularity was not always a good strategy since the etching depth required for a complementary pattern occasionally exceptionally increased with the decrease in granularity. On basis of the results obtained, the automated method was applied to a chip-scale pattern modification. Simulation results showed a marked improvement in residual layer thickness uniformity for a capacity-equalized (CE) mold. For the given conditions, the standard deviation of RLT decreased in the range from 1/3 to 1/5 in accordance with pattern designs.

  10. Energy and angular distribution of electrons after transmission of thick layers

    International Nuclear Information System (INIS)

    Kreyling, H.

    1975-01-01

    In this work, the behaviour of electrons going through material-layers is studied. For a layer-thickness where the theories of multiple-scattering are no longer valid, a Monte-Carlo-method is presented for the calculation of energy distributions as a function of scattering-angle. Plastic-scintillator-material (NE 102 A produced by Nuclear Enterprises Ltd.) was bombarded by electrons with energies between 0.5 and 2.0 MeV and the energy-distributions of the electrons, scatterd in the layer, were measured as a function of the scattering-angle. With the aid of the Monte-Carlo-method developed in this paper, energy distributions were calculated as a function of scattering-angle for the two absorber materials aluminium (single-element material) and NE 102 A (chemical compound of C, N, H, O). (orig./WL) [de

  11. Adhesion-enhanced thick copper film deposition on aluminum oxide by an ion-beam-mixed Al seed layer

    International Nuclear Information System (INIS)

    Kim, Hyung-Jin; Park, Jae-Won

    2012-01-01

    We report a highly-adherent 30-μm Cu conductive-path coating on an aluminum-oxide layer anodized on an aluminum-alloy substrate for a metal-printed circuit-board application. A 50-nm Al layer was first coated with an e-beam evaporative deposition method on the anodized oxide, followed by ion bombardment to mix the interfacial region. Subsequently, a Cu coating was deposited onto the mixed seed layer to the designed thickness. Adhesions of the interface were tested by using tape adhesion test, and pull-off tests and showed commercially acceptable adhesions for such thick coating layers. The ion beam mixing (IBM) plays the role of fastening the thin seed coating layer to the substrate and enhancing the adhesion of the Cu conductive path on the anodized aluminum surface.

  12. Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

    Science.gov (United States)

    Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

    2018-05-01

    In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

  13. Continuous amorphization of Cu-Zr studied by positron lifetime

    International Nuclear Information System (INIS)

    Wilde, G.; Wuerschum, R.; Rabitsch, H.; Puff, W.

    2006-01-01

    Full text: Solid state amorphization by cold-rolling represents an attractive alternative to commonly used ball-milling. The present work aimed at a free volume study of the process of amorphization. To study the amorphization process binary Cu-Zr alloys were mechanically intermixed by cold rolling. Foils of pure Cu and Zr were stacked to form arrays of composition Cu 60 Zr 40 and folded four times. The folded samples were rolled at a strain rate of approximately 0.1 s -1 to a thickness of about 80 μm and then folded to double the thickness and rolled again to a minimum thickness of 80 μm. This procedure was repeated until the final material was cold-rolled for up to 80 passes. The microstructural changes during cold-rolling were investigated at different stages of the mechanical intermixing process by positron lifetime and 2-dimensional Doppler broadening measurements. The obtained Doppler results are discussed analysing the S-W-plot as well as a two-component fit and the shape of the ratio curves. Finally the results are compared to the lifetime results. (author)

  14. Achievement report for fiscal 1984 on Sunshine Program-entrusted research and development. Research and development of amorphous solar cells (Research on amorphous silicon interface); 1984 nendo amorphous taiyo denchi no kenkyu kaihatsu seika hokokusho. Amorphous silicon no kaimen no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1985-03-01

    As for the formation of amorphous semiconductors by photo-CVD (chemical vapor deposition) processes, details are examined of a-Si formed by the excimer laser-excited photo-CVD process, a-SiC formed by the directly excited photo-CVD process, a-SiGe formed by the mercury sensitized reaction photo-CVD process, and {mu}c-Si formed by the mercury-sensitized reaction photo-CVD process. It is then found that all of the said materials are superior to a product of the plasma CVD process in terms of film quality. As for the fabrication of amorphous Si solar cells by a photo-CVD process, a 3-separate-chamber unit is built, in which all the p-, I-, and n-layer are formed by photo-CVD. It is then found that the introduction of a buffer layer into the p/I interface is a powerful tool to enhance efficiency and that the use of the buffer zone brings about an increase of 9% or more in conversion efficiency. In the case of an amorphous solar cell using monosilane, buffer layer introduction results in a conversion efficiency of 9.05%. (NEDO)

  15. Computed tomography evaluation of human mandibles with regard to layer thickness and bone density of the cortical bone

    International Nuclear Information System (INIS)

    Markwardt, Jutta; Meissner, H.; Weber, A.; Reitemeier, B.; Laniado, M.

    2013-01-01

    Application of function-restoring individual implants for the bridging of defects in mandibles with continuity separation requires a stable fixation with special use of the cortical bone stumps. Five section planes each of 100 computed tomographies of poly-traumatized patients' jaws were used for measuring the thickness of the cortical layer and the bone density of the mandible. The CT scans of 28 female and 72 male candidates aged between 12 and 86 years with different dentition of the mandible were available. The computed tomographic evaluations of human mandibles regarding the layer thickness of the cortical bone showed that the edge of the mandible in the area of the horizontal branch possesses the biggest layer thickness of the whole of the lower jaws. The highest medians of the cortical bone layer thickness were found in the area of the molars and premolars at the lower edge of the lower jaws in 6-o'clock position, in the area of the molars in the vestibular cranial 10-o'clock position and in the chin region lingual-caudal in the 4-o'clock position. The measurement of the bone density showed the highest values in the 8-o'clock position (vestibular-caudal) in the molar region in both males and females. The average values available of the bone density and the layer thickness of the cortical bone in the various regions of the lower jaw, taking into consideration age, gender and dentition, are an important aid in practice for determining a safe fixation point for implants in the area of the surface layer of the mandible by means of screws or similar fixation elements. (orig.)

  16. Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells

    International Nuclear Information System (INIS)

    Feldmann, Frank; Mueller, Ralph; Reichel, Christian; Hermle, Martin

    2014-01-01

    This paper reports our findings on the boron and phosphorus doping of very thin amorphous silicon layers by low energy ion implantation. These doped layers are implemented into a so-called tunnel oxide passivated contact structure for Si solar cells. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. In this paper we address the influence of ion energy and ion dose in conjunction with the obligatory high-temperature anneal needed for the realization of the passivation quality of the carrier-selective contacts. The good results on the phosphorus-doped (implied V oc = 725 mV) and boron-doped passivated contacts (iV oc = 694 mV) open a promising route to a simplified interdigitated back contact (IBC) solar cell featuring passivated contacts. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H

    International Nuclear Information System (INIS)

    Focsa, A.; Slaoui, A.; Charifi, H.; Stoquert, J.P.; Roques, S.

    2009-01-01

    Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that serves also as an excellent antireflection layer. On the other hand, surface passivation of p-type silicon is better assured by an hydrogenated amorphous silicon (a-Si:H) layer but suffers from optical properties. In this paper, we reported the surface passivation of p-type and n-type silicon wafers by using an a-Si:H/SiNx:H double layer formed at low temperature (50-400 deg. C) with ECR-PECVD technique. We first investigated the optical properties (refraction index, reflectance, and absorbance) and structural properties by FTIR (bonds Si-H, N-H) of the deposited films. The hydrogen content in the layers was determined by elastic recoil detection analysis (ERDA). The passivation effect was monitored by measuring the minority carrier effective lifetime vs. different parameters such as deposition temperature and amorphous silicon layer thickness. We have found that a 10-15 nm a-Si film with an 86 nm thick SiN layer provides an optimum of the minority carriers' lifetime. It increases from an initial value of about 50-70 μs for a-Si:H to about 760 and 800 μs for a-Si:H/SiNx:H on Cz-pSi and FZ-nSi, respectively, at an injection level 2 x 10 15 cm -3 . The effective surface recombination velocity, S eff , for passivated double layer on n-type FZ Si reached 11 cm/s and for FZ-pSi-14 cm/s, and for Cz-pSi-16-20 cm/s. Effect of hydrogen in the passivation process is discussed.

  18. Segmented inner plexiform layer thickness as a potential biomarker to evaluate open-angle glaucoma: Dendritic degeneration of retinal ganglion cell.

    Directory of Open Access Journals (Sweden)

    Eun Kyoung Kim

    Full Text Available To evaluate the changes of retinal nerve fiber layer (RNFL, ganglion cell layer (GCL, inner plexiform layer (IPL, and ganglion cell-inner plexiform layer (GCIPL thicknesses and compare structure-function relationships of 4 retinal layers using spectral-domain optical coherence tomography (SD-OCT in macular region of glaucoma patients.In cross-sectional study, a total of 85 eyes with pre-perimetric to advanced glaucoma and 26 normal controls were enrolled. The glaucomatous eyes were subdivided into three groups according to the severity of visual field defect: a preperimetric glaucoma group, an early glaucoma group, and a moderate to advanced glaucoma group. RNFL, GCL, IPL, and GCIPL thicknesses were measured at the level of the macula by the Spectralis (Heidelberg Engineering, Heidelberg, Germany SD-OCT with automated segmentation software. For functional evaluation, corresponding mean sensitivity (MS values were measured using 24-2 standard automated perimetry (SAP.RNFL, GCL, IPL, and GCIPL thicknesses were significantly different among 4 groups (P < .001. Macular structure losses were positively correlated with the MS values of the 24-2 SAP for RNFL, GCL, IPL, and GCIPL (R = 0.553, 0.636, 0.648 and 0.646, respectively, P < .001. In regression analysis, IPL and GCIPL thicknesses showed stronger association with the corresponding MS values of 24-2 SAP compared with RNFL and GCL thicknesses (R2 = 0.420, P < .001 for IPL; R2 = 0.417, P< .001 for GCIPL thickness.Segmented IPL thickness was significantly associated with the degree of glaucoma. Segmental analysis of the inner retinal layer including the IPL in macular region may provide valuable information for evaluating glaucoma.

  19. Segmented inner plexiform layer thickness as a potential biomarker to evaluate open-angle glaucoma: Dendritic degeneration of retinal ganglion cell.

    Science.gov (United States)

    Kim, Eun Kyoung; Park, Hae-Young Lopilly; Park, Chan Kee

    2017-01-01

    To evaluate the changes of retinal nerve fiber layer (RNFL), ganglion cell layer (GCL), inner plexiform layer (IPL), and ganglion cell-inner plexiform layer (GCIPL) thicknesses and compare structure-function relationships of 4 retinal layers using spectral-domain optical coherence tomography (SD-OCT) in macular region of glaucoma patients. In cross-sectional study, a total of 85 eyes with pre-perimetric to advanced glaucoma and 26 normal controls were enrolled. The glaucomatous eyes were subdivided into three groups according to the severity of visual field defect: a preperimetric glaucoma group, an early glaucoma group, and a moderate to advanced glaucoma group. RNFL, GCL, IPL, and GCIPL thicknesses were measured at the level of the macula by the Spectralis (Heidelberg Engineering, Heidelberg, Germany) SD-OCT with automated segmentation software. For functional evaluation, corresponding mean sensitivity (MS) values were measured using 24-2 standard automated perimetry (SAP). RNFL, GCL, IPL, and GCIPL thicknesses were significantly different among 4 groups (P < .001). Macular structure losses were positively correlated with the MS values of the 24-2 SAP for RNFL, GCL, IPL, and GCIPL (R = 0.553, 0.636, 0.648 and 0.646, respectively, P < .001). In regression analysis, IPL and GCIPL thicknesses showed stronger association with the corresponding MS values of 24-2 SAP compared with RNFL and GCL thicknesses (R2 = 0.420, P < .001 for IPL; R2 = 0.417, P< .001 for GCIPL thickness). Segmented IPL thickness was significantly associated with the degree of glaucoma. Segmental analysis of the inner retinal layer including the IPL in macular region may provide valuable information for evaluating glaucoma.

  20. SU-8 Based MEMS Process with Two Metal Layers using α-Si as a Sacrificial Material

    KAUST Repository

    Ramadan, Khaled S.

    2012-04-01

    Polymer based microelectromechanical systems (MEMS) micromachining is finding more interest in research and applications. This is due to its low cost and less time processing compared with silicon MEMS. SU-8 is a photo-patternable polymer that is used as a structural layer for MEMS and microfluidic devices. In addition to being processed with low cost, it is a biocompatible material with good mechanical properties. Also, amorphous silicon (α-Si) has found use as a sacrificial layer in silicon MEMS applications. α-Si can be deposited at large thicknesses for MEMS applications and also can be released in a dry method using XeF2 which can solve stiction problems related to MEMS applications. In this thesis, an SU-8 MEMS process is developed using amorphous silicon (α-Si) as a sacrificial layer. Electrostatic actuation and sensing is used in many MEMS applications. SU-8 is a dielectric material which limits its direct use in electrostatic actuation. This thesis provides a MEMS process with two conductive metal electrodes that can be used for out-of-plane electrostatic applications like MEMS switches and variable capacitors. The process provides the fabrication of dimples that can be conductive or non-conductive to facilitate more flexibility for MEMS designers. This SU-8 process can fabricate SU-8 MEMS structures of a single layer of two different thicknesses. Process parameters were tuned for two sets of thicknesses which are thin (5-10μm) and thick (130μm). Chevron bent-beam structures and different suspended beams (cantilevers and bridges) were fabricated to characterize the SU-8 process through extracting the density, Young’s Modulus and the Coefficient of Thermal Expansion (CTE) of SU-8. Also, the process was tested and used as an educational tool through which different MEMS structures were fabricated including MEMS switches, variable capacitors and thermal actuators.

  1. Effect of the thickness of Zn(BTZ)2 emitting layer on the electroluminescent spectra of white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Zhu, F.J.; Hua, Y.L.; Yin, S.G.; Deng, J.C.; Wu, K.W.; Niu, X.; Wu, X.M.; Petty, M.C.

    2007-01-01

    White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ) 2 /Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ) 2 emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ) 2 . Specially, the thickness of Zn(BTZ) 2 layer effects the relative intensity of two emissions. When the Zn(BTZ) 2 layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ) 2 layer was 65 nm

  2. Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

    International Nuclear Information System (INIS)

    Charitidis, C.A.; Skarmoutsou, A.; Nassiopoulou, A.G.; Dragoneas, A.

    2011-01-01

    Highlights: → The nanomechanical properties of bulk crystalline Si. → The nanomechanical properties of porous Si. → The elastic-plastic deformation of porous Si compared to bulk crystalline quantified by nanoindentation data analysis. - Abstract: The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50 nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores.

  3. On the Fundamental Mode Love Wave in Devices Incorporating Thick Viscoelastic Layers

    International Nuclear Information System (INIS)

    Liu Jian-Sheng; Wang Li-Jun; He Shi-Tang

    2015-01-01

    A detailed investigation is presented for Love waves (LWs) with thick viscoelastic guiding layers. A theoretical calculation and an experiment are carried out for LW devices incorporating an SU-8 guiding layer, an ST-90° X quartz substrate and two 28-μm periodic interdigital transducers. Both the calculated and the measured results show an increase in propagation velocity when h/λ > 0.05. The measured insertion loss of LWs is consistent with the calculated propagation loss. The insertion loss of bulk waves is also measured and is compared with that of LWs. (paper)

  4. Electronic structure of the amorphous-crystalline Silicon heterostructure contact; Die elektronische Struktur des amorph-kristallinen Silizium-Heterostruktur-Kontakts

    Energy Technology Data Exchange (ETDEWEB)

    Korte, L.

    2006-07-01

    In the present work, the electronic density of states of hydrogenated amorphous silicon (a-Si:H) layers in the thickness range from 300 down to {proportional_to}2 nm was examined by Near-UV-photoelectron spectroscopy (NUV-PES). The measurements yield a mean density (averaged over all directions in k space) of the extended states in the valence band close to the band edge E{sub v}, down to approximately E{sub v}-1 eV, as well as the density of states in the band-gap between E{sub v} and the Fermi level E{sub f}. An analytic model for the density of states was fitted to the measured yield data. The model describes the extended states close to the band edge as well as the localized states in the band gap. The defect parameters obtained from the fits to the 300 nm sample are elevated with respect to literature data. In contrast to PES the photocurrent measurement yield the defect parameters averaged over the entire layer thickness. Finally, the photocurrent measurements can be evaluated in the Tauc plot to yield the optical band-gap, E{sub g}{sup opt}=1.76(5) eV. The methodology developed in the first part of the thesis (PES measurement and fit of the model density of states) was then applied to various series of approximately 10 nm thin a-Si:H layers on c-Si substrates, where the deposition temperature of the layers and the concentration of their doping both by phosphorus and boron were varied. The experimental results can be summarized as follows: Ultrathin a-Si:H layers show an optimum of the deposition-temperature around 230 C. The optimum is characterized by an Urbach energy of 66(1) meV and a defect-density of 2,9(3).10{sup 18} cm{sup -3}. For undoped layers, the Fermi level lies E{sub F}-E{sub V}{sup {mu}}=1.04(6) eV, the films are therefore slightly n-type. Conductivity measurements at identically prepared thick layers on glass allow to determine the distance of the Fermi level to the conduction band mobility edge, E{sub C}{sup {mu}}-E{sub F}. Both for the

  5. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2015-02-23

    Polycrystalline GeSn thin films are fabricated on insulating substrates at low temperatures by using Sn-induced crystallization of amorphous Ge (a-Ge). The Sn layer stacked on the a-Ge layer (100-nm thickness each) had two roles: lowering the crystallization temperature of a-Ge and composing GeSn. Slow annealing at an extremely low temperature of 70 °C allowed for a large-grained (350 nm) GeSn layer with a lattice constant of 0.590 nm, corresponding to a Sn composition exceeding 25%. The present investigation paves the way for advanced electronic optical devices integrated on a flexible plastic substrate as well as on a Si platform.

  6. Magnetic properties of exchange-coupled trilayers of amorphous rare-earth-cobalt alloys

    International Nuclear Information System (INIS)

    Wuechner, S.; Toussaint, J.C.; Voiron, J.

    1997-01-01

    From amorphous thin films from alloys of rare earths (Gd, Sm), yttrium or zirconium with cobalt we have prepared trilayers with very clean interfaces appropriate for the study of magnetic coupling. The sandwiches were typically Y-Co/Gd-Co/Y-Co and Sm-Co/X/Sm-Co ' (X=Gd-Co, Co-Zr, Co). The three individual layers are coupled magnetically by exchange interactions between cobalt moments throughout the entire sample. This coupling associated with the specific properties of the given alloy (magnetic moment, anisotropy, coercivity) leads to ferrimagnetic or ferromagnetic structures of the magnetization of adjacent layers and to novel magnetization processes. For systems consisting of magnetically hard external layers with different coercivities and a soft central layer (Sm-Co/X/Sm-Co ' , X=Gd-Co, Co-Zr), the influence of the central layer close-quote s thickness and type of the material on coupling and magnetization processes have been studied quantitatively. Numerical simulations using a one-dimensional model for describing the magnetization processes observed in sandwich systems fit the magnetization curves of these model systems particularly well. copyright 1997 The American Physical Society

  7. Retinal nerve fiber layer thickness map determined from optical coherence tomography images

    NARCIS (Netherlands)

    Mujat, M.; Chan, R. C.; Cense, B.; Park, B.H.; Joo, C.; Akkin, T.; Chen, TC; de Boer, JF

    2005-01-01

    We introduce a method to determine the retinal nerve fiber layer (RNFL) thickness in OCT images based on anisotropic noise suppression and deformable splines. Spectral-Domain Optical Coherence Tomography (SDOCT) data was acquired at 29 kHz A-line rate with a depth resolution of 2.6 mum and a depth

  8. Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

    Science.gov (United States)

    Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

    2018-05-01

    Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

  9. Characterization of 13 and 30 mum thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    CERN Document Server

    Despeisse, M; Commichau, S C; Dissertori, G; Garrigos, A; Jarron, P; Miazza, C; Moraes, D; Shah, A; Wyrsch, N; Viertel, Gert M; 10.1016/j.nima.2003.11.022

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30mum thick a-Si:H films deposited on top of an ASIC containing a linear array of high- speed low-noise transimpedance amplifiers designed in a 0.25mum CMOS technology. Experimental results presented have been obtained with a 600nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed.

  10. Rapid growth of amorphous carbon films on the inner surface of micron-thick and hollow-core fibers

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Longfei [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Liu, Dongping, E-mail: Dongping.liu@dlnu.edu.cn [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Zhou, Xinwei [Department of Mechanical Engineering, Zhejiang University, Zhejiang 310007 (China); Song, Ying [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 (China); Ni, Weiyuan [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Niu, Jinhai; Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China)

    2013-10-01

    Ultrathick (> 25 μm) carbon films were obtained on the inner surface of hollow and micron-thick quartz fibers by confining CH{sub 4}/He or C{sub 2}H{sub 2}/He microplasmas in their hollow cores. The resulting carbon films were studied by using scanning electron microscopy and energy-dispersive X-ray spectroscopy. The microplasma-enhanced chemical vapor deposition (CVD) technique resulted in the uniform growth of amorphous carbon films on the inner surface of very long (> 1 m) hollow-core fibers. Film deposition is performed by using microplasmas at atmospheric pressure and at 50 Pa. The carbon films obtained with the latter show the smooth inner surfaces and the well continuity across the film/optical fiber. Low-pressure CH{sub 4}/He and C{sub 2}H{sub 2}/He microplasmas can lead to a rapid growth (∼ 2.00 μm/min) of carbon films with their thickness of > 25 μm. The optical emission measurements show that various hydrocarbon species were formed in these depositing microplasmas due to the collisions between CH{sub 4}/C{sub 2}H{sub 2} molecules and energetic species. The microplasma-enhanced CVD technique running without the complicated fabrication processes shows its potentials for rapidly depositing the overlong carbon tubes with their inner diameters of tens of microns. - Highlights: • The microplasma device is applied for coating deposition inside hollow-core fibers. • The microplasma device results in > 25 μm-thick carbon films. • The microplasma device is simple for deposition of ultralong carbon tubes.

  11. Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12 MHz Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Chia-Hsun Hsu

    2013-01-01

    Full Text Available Amorphous-like silicon (a-Si:H-like thin films are prepared by 27.12 MHz plasma-enhanced chemical vapor deposition technique. The films are applied to p-i-n single junction thin film solar cells with varying i-layer thickness to observe the effects on the short-circuit current density, as well as the open-circuit voltage, fill factor, and conversion efficiency. The most significant experimental result is that Jsc has two different behaviors with increasing the i-layer thickness, which can be related to carrier collection efficiency in the long wavelength region. Furthermore, technology computer-aided design simulation software is used to gain better insight into carrier generation and recombination of the solar cells, showing that for the i-layer thickness of 200 to 300 nm the generation dominates the carrier density and thus Jsc, whereas for the i-layer thickness of 300 to 400 nm the recombination becomes the leading factor. The simulation results of cell performances are in good agreement with experimental data, indicating that our simulation has great reliability. In addition, the a-Si:H-like solar cells have low light-induced degradation, which in turn can have a great potential to be used for stable and high-efficiency solar cells.

  12. P-type surface effects for thickness variation of 2um and 4um of n-type layer in GaN LED

    Science.gov (United States)

    Halim, N. S. A. Abdul; Wahid, M. H. A.; Hambali, N. A. M. Ahmad; Rashid, S.; Ramli, M. M.; Shahimin, M. M.

    2017-09-01

    The internal quantum efficiency of III-Nitrides group, GaN light-emitting diode (LED) has been considerably limited due to the insufficient hole injection and this is caused by the lack of performance p-type doping and low hole mobility. The low hole mobility makes the hole less energetic, thus reduced the performance operation of GaN LED itself. The internal quantum efficiency of GaN-based LED with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of surface shape and thickness of GaN film. Besides, due to lack of p-type GaN, attempts to look forward the potential of GaN LED relied on the thickness of n-type layer and surface shape of p-type GaN layer. This work investigates the characteristics of GaN LED with undoped n-GaN layer of different thickness and the surface shape of p-type layer. The LEDs performance is significantly altered by modifying the thickness and shape. Enhancement of n-GaN layer has led to the annihilation of electrical conductivity of the chip. Different surface geometry governs the emission rate extensively. Internal quantum efficiency is also predominantly affected by the geometry of n-GaN layer which subjected to the current spreading. It is recorded that the IQE droop can be minimized by varying the thickness of the active layer without amplifying the forward voltage. Optimum forward voltage (I-V), total emission rate relationship with the injected current and internal quantum efficiency (IQE) for 2,4 µm on four different surfaces of p-type layer are also reported in this paper.

  13. Analysis of macular and nerve fiber layer thickness in multiple sclerosis patients according to severity level and optic neuritis episodes.

    Science.gov (United States)

    Soler García, A; Padilla Parrado, F; Figueroa-Ortiz, L C; González Gómez, A; García-Ben, A; García-Ben, E; García-Campos, J M

    2016-01-01

    Quantitative assessment of macular and nerve fibre layer thickness in multiple sclerosis patients with regard to expanded disability status scale (EDSS) and presence or absence of previous optic neuritis episodes. We recruited 62 patients with multiple sclerosis (53 relapsing-remitting and 9 secondary progressive) and 12 disease-free controls. All patients underwent an ophthalmological examination, including quantitative analysis of the nerve fibre layer and macular thickness using optical coherence tomography. Patients were classified according to EDSS as A (lower than 1.5), B (between 1.5 and 3.5), and C (above 3.5). Mean nerve fibre layer thickness in control, A, B, and C groups was 103.35±12.62, 99.04±14.35, 93.59±15.41, and 87.36±18.75μm respectively, with statistically significant differences (P<.05). In patients with no history of optic neuritis, history of episodes in the last 3 to 6 months, or history longer than 6 months, mean nerve fibre layer thickness was 99.25±13.71, 93.92±13.30 and 80.07±15.91μm respectively; differences were significant (P<.05). Mean macular thickness in control, A, B, and C groups was 220.01±12.07, 217.78±20.02, 217.68±20.77, and 219.04±24.26μm respectively. Differences were not statistically significant. The mean retinal nerve fibre layer thickness in multiple sclerosis patients is related to the EDSS level. Patients with previous optic neuritis episodes have a thinner retinal nerve fibre layer than patients with no history of these episodes. Mean macular thickness is not correlated to EDSS level. Copyright © 2014 Sociedad Española de Neurología. Publicado por Elsevier España, S.L.U. All rights reserved.

  14. Noise and degradation of amorphous silicon devices

    NARCIS (Netherlands)

    Bakker, J.P.R.

    2003-01-01

    Electrical noise measurements are reported on two devices of the disordered semiconductor hydrogenated amorphous silicon (a-Si:H). The material is applied in sandwich structures and in thin-film transistors (TFTs). In a sandwich configuration of an intrinsic layer and two thin doped layers, the

  15. Surface profile gradient in amorphous Ta{sub 2}O{sub 5} semi conductive layers regulates nanoscale electric current stability

    Energy Technology Data Exchange (ETDEWEB)

    Cefalas, A.C., E-mail: ccefalas@eie.gr [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Kollia, Z.; Spyropoulos-Antonakakis, N.; Gavriil, V. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Christofilos, D.; Kourouklis, G. [Physics Division, School of Technology, Aristotle University of Thessaloniki, Thessaloniki 54124 (Greece); Semashko, V.V.; Pavlov, V. [Kazan Federal University, Institute of Physics, 18 Kremljovskaja str., Kazan 420008 (Russian Federation); Sarantopoulou, E. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, 48 Vassileos Constantinou Avenue, Athens 11635 (Greece); Kazan Federal University, Institute of Physics, 18 Kremljovskaja str., Kazan 420008 (Russian Federation)

    2017-02-28

    Highlights: • The work links the surface morphology of amorphous semiconductors with both their electric-thermal properties and current stability at the nanoscale (<1 μm). • Measured high correlation value between surface morphological spatial gradient and conductive electron energy spatial gradient or thermal gradient. • Unidirectional current stability is associated with asymmetric nanodomains along nanosize conductive paths. • Bidirectional current stability is inherent with either long conductive paths or nanosize conductive paths along symmetric nanodomains. • Conclusion: Surface design improves current stability across nanoelectonic junctions. - Abstract: A link between the morphological characteristics and the electric properties of amorphous layers is established by means of atomic, conductive, electrostatic force and thermal scanning microscopy. Using amorphous Ta{sub 2}O{sub 5} (a-Ta{sub 2}O{sub 5}) semiconductive layer, it is found that surface profile gradients (morphological gradient), are highly correlated to both the electron energy gradient of trapped electrons in interactive Coulombic sites and the thermal gradient along conductive paths and thus thermal and electric properties are correlated with surface morphology at the nanoscale. Furthermore, morphological and electron energy gradients along opposite conductive paths of electrons intrinsically impose a current stability anisotropy. For either long conductive paths (L > 1 μm) or along symmetric nanodomains, current stability for both positive and negative currents i is demonstrated. On the contrary, for short conductive paths along non-symmetric nanodomains, the set of independent variables (L, i) is spanned by two current stability/intability loci. One locus specifies a stable state for negative currents, while the other locus also describes a stable state for positive currents.

  16. Electron beam-induced radiation damage: the bubbling response in amorphous dried sodium phosphate buffer.

    Science.gov (United States)

    Massover, William H

    2010-06-01

    Irradiation of an amorphous layer of dried sodium phosphate buffer (pH = 7.0) by transmission electron microscopy (100-120 kV) causes rapid formation of numerous small spherical bubbles [10-100 A (= 1-10 nm)] containing an unknown gas. Bubbling is detected even with the first low-dose exposure. In a thin layer (ca. 100-150 A), bubbling typically goes through nucleation, growth, possible fusion, and end-state, after which further changes are not apparent; co-irradiated adjacent areas having a slightly smaller thickness never develop bubbles. In moderately thicker regions (ca. over 200 A), there is no end-state. Instead, a complex sequence of microstructural changes is elicited during continued intermittent high-dose irradiation: nucleation, growth, early simple fusions, a second round of extensive multiple fusions, general reduction of matrix thickness (producing flattening and expansion of larger bubbles, occasional bubble fission, and formation of very large irregularly-shaped bubbles by a third round of compound fusion events), and slow shrinkage of all bubbles. The ongoing lighter appearance of bubble lumens, maintenance of their rounded shape, and extensive changes in size and form indicate that gas content continues throughout their surprisingly long lifetime; the thin dense boundary layer surrounding all bubbles is proposed to be the main mechanism for their long lifetime.

  17. Dynamic Analysis of Three-Layer Sandwich Beams with Thick Viscoelastic Damping Core for Finite Element Applications

    Directory of Open Access Journals (Sweden)

    Fernando Cortés

    2015-01-01

    Full Text Available This paper presents an analysis of the dynamic behaviour of constrained layer damping (CLD beams with thick viscoelastic layer. A homogenised model for the flexural stiffness is formulated using Reddy-Bickford’s quadratic shear in each layer, and it is compared with Ross-Kerwin-Ungar (RKU classical model, which considers a uniform shear deformation for the viscoelastic core. In order to analyse the efficiency of both models, a numerical application is accomplished and the provided results are compared with those of a 2D model using finite elements, which considers extensional and shear stress and longitudinal, transverse, and rotational inertias. The intermediate viscoelastic material is characterised by a fractional derivative model, with a frequency dependent complex modulus. Eigenvalues and eigenvectors are obtained from an iterative method avoiding the computational problems derived from the frequency dependence of the stiffness matrices. Also, frequency response functions are calculated. The results show that the new model provides better accuracy than the RKU one as the thickness of the core layer increases. In conclusion, a new model has been developed, being able to reproduce the mechanical behaviour of thick CLD beams, reducing storage needs and computational time compared with a 2D model, and improving the results from the RKU model.

  18. Molecular simulation of freestanding amorphous nickel thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dong, T.Q. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France); Hoang, V.V., E-mail: vvhoang2002@yahoo.com [Department of Physics, Institute of Technology, National University of Ho Chi Minh City, 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City (Viet Nam); Lauriat, G. [Université Paris-Est, Laboratoire Modélisation et Simulation Multi Echelle, UMR 8208 CNRS, 5 Boulevard Descartes, 77454 Marne-la-Vallée, Cedex 2 (France)

    2013-10-31

    Size effects on glass formation in freestanding Ni thin films have been studied via molecular dynamics simulation with the n-body Gupta interatomic potential. Atomic mechanism of glass formation in the films is determined via analysis of the spatio-temporal arrangements of solid-like atoms occurred upon cooling from the melt. Solid-like atoms are detected via the Lindemann ratio. We find that solid-like atoms initiate and grow mainly in the interior of the film and grow outward. Their number increases with decreasing temperature and at a glass transition temperature they dominate in the system to form a relatively rigid glassy state of a thin film shape. We find the existence of a mobile surface layer in both liquid and glassy states which can play an important role in various surface properties of amorphous Ni thin films. We find that glass formation is size independent for models containing 4000 to 108,000 atoms. Moreover, structure of amorphous Ni thin films has been studied in details via coordination number, Honeycutt–Andersen analysis, and density profile which reveal that amorphous thin films exhibit two different parts: interior and surface layer. The former exhibits almost the same structure like that found for the bulk while the latter behaves a more porous structure containing a large amount of undercoordinated sites which are the origin of various surface behaviors of the amorphous Ni or Ni-based thin films found in practice. - Highlights: • Glass formation is analyzed via spatio-temporal arrangements of solid-like atoms. • Amorphous Ni thin film exhibits two different parts: surface and interior. • Mobile surface layer enhances various surface properties of the amorphous Ni thin films. • Undercoordinated sites play an important role in various surface activities.

  19. Simulation and experimental determination of the macro-scale layer thickness distribution of electrodeposited Cu-line patterns on a wafer substrate

    DEFF Research Database (Denmark)

    Pantleon, Karen; Bossche, Bart van den; Purcar, Marius

    2005-01-01

    The impact of adjacent patterned zones with different active area densities on the current density and electrodeposited layer thickness distribution over a wafer substrate is examined, both by experiment and numerical simulation. The experiments consist in running an acid copper plating process o......) approach to compute the current density distribution over the electrodes. Experimental and computed layer thickness distributions are in very good agreement.......The impact of adjacent patterned zones with different active area densities on the current density and electrodeposited layer thickness distribution over a wafer substrate is examined, both by experiment and numerical simulation. The experiments consist in running an acid copper plating process...... on the patterned wafer, and layer thickness measurements by means of X-ray fluorescence (XRF) and atomic force microscopy (AFM). The simulations are based on a potential model approach taking into account electrolyte ohmic drop and electrode polarization effects, combined to a boundary element method (BEM...

  20. THE THICKNESS DEPENDENCE OF OXYGEN PERMEABILITY IN SOL-GEL DERIVED CGO-COFE2O4 THIN FILMS ON POROUS CERAMIC SUBSTRATES: A SPUTTERED BLOCKING LAYER FOR THICKNESS CONTROL

    Energy Technology Data Exchange (ETDEWEB)

    Brinkman, K

    2009-01-08

    Mixed conductive oxides are a topic of interest for applications in oxygen separation membranes as well as use in producing hydrogen fuel through the partial oxidation of methane. The oxygen flux through the membrane is governed both by the oxygen ionic conductivity as well as the material's electronic conductivity; composite membranes like Ce{sub 0.8}Gd{sub 0.2}O{sub 2-{delta}} (CGO)-CoFe{sub 2}O{sub 4} (CFO) use gadolinium doped ceria oxides as the ionic conducting material combined with cobalt iron spinel which serves as the electronic conductor. In this study we employ {approx} 50 nm sputtered CeO{sub 2} layers on the surface of porous CGO ceramic substrates which serve as solution 'blocking' layers during the thin film fabrication process facilitating the control of film thickness. Films with thickness of {approx} 2 and 4 microns were prepared by depositing 40 and 95 separate sol-gel layers respectively. Oxygen flux measurements indicated that the permeation increased with decreasing membrane thickness; thin film membrane with thickness on the micron level showed flux values an order of magnitude greater (0.03 {micro}mol/cm{sup 2} s) at 800 C as compared to 1mm thick bulk ceramic membranes (0.003 {micro}mol/cm{sup 2}).

  1. Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Godbole, M., E-mail: mohit.godbole@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Coetsee, E.; Swart, H.C. [Department of Physics, University of the Free State, PO Box 339, Bloemfontein 9300 (South Africa); Neethling, J.H.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 {mu}m. In this particular study, the dots were grown at 450 Degree-Sign C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 {mu}m while the best spacer thickness was found to be 200 nm.

  2. Dependence of surface distribution of self-assembled InSb nanodots on surface morphology and spacer layer thickness

    International Nuclear Information System (INIS)

    Godbole, M.; Olivier, E.J.; Coetsee, E.; Swart, H.C.; Neethling, J.H.; Botha, J.R.

    2012-01-01

    Self-assembled InSb nanodots (NDs) were grown on a GaSb (1 0 0) substrate using metal-organic vapour phase epitaxy (MOVPE). The effects of etching depth of the substrate and thickness of the GaSb buffer layer on the density and size distribution of single and double layer dots were studied for detector applications. The etch depth of the substrate was varied up to 30 μm. In this particular study, the dots were grown at 450 °C and the GaSb spacer thickness was varied between 50 nm and 200 nm. The optimum substrate etch depth was found to be 30 μm while the best spacer thickness was found to be 200 nm.

  3. THICKNESS OF THE MACULA, RETINAL NERVE FIBER LAYER, AND GANGLION CELL-INNER PLEXIFORM LAYER IN THE AGE-RELATED MACULAR DEGENERATION: The Repeatability Study of Spectral Domain Optical Coherence Tomography.

    Science.gov (United States)

    Shin, Il-Hwan; Lee, Woo-Hyuk; Lee, Jong-Joo; Jo, Young-Joon; Kim, Jung-Yeul

    2018-02-01

    To determine the repeatability of measuring the thickness of the central macula, retinal nerve fiber layer, and ganglion cell-inner plexiform layer (GC-IPL) using spectral domain optical coherence tomography (Cirrus HD-OCT) in eyes with age-related macular degeneration. One hundred and thirty-four eyes were included. The measurement repeatability was assessed by an experienced examiner who performed two consecutive measurements using a 512 × 128 macular cube scan and a 200 × 200 optic disk cube scan. To assess changes in macular morphology in patients with age-related macular degeneration, the patients were divided into the following three groups according to the central macular thickness (CMT): A group, CMT 300 μm. Measurement repeatability was assessed using test-retest variability, a coefficient of variation, and an intraclass correlation coefficient. The mean measurement repeatability for the central macular, retinal nerve fiber layer, and GC-IPL thickness was high in the B group. The mean measurement repeatability for both the central macula and retinal nerve fiber layer thickness was high in the A and C groups, but was lower for the GC-IPL thickness. The measurement repeatability for GC-IPL thickness was high in the B group, but low in the A group and in the C group. The automated measurement repeatability for GC-IPL thickness was significantly lower in patients with age-related macular degeneration with out of normal CMT range. The effect of changes in macular morphology should be considered when analyzing GC-IPL thicknesses in a variety of ocular diseases.

  4. Effect of layer thickness in selective laser melting on microstructure of Al/5 wt.%Fe2O3 powder consolidated parts.

    Science.gov (United States)

    Dadbakhsh, Sasan; Hao, Liang

    2014-01-01

    In situ reaction was activated in the powder mixture of Al/5 wt.%Fe2O3 by using selective laser melting (SLM) to directly fabricate aluminium metal matrix composite parts. The microstructural characteristics of these in situ consolidated parts through SLM were investigated under the influence of thick powder bed, 75  μm layer thickness, and 50  μm layer thickness in various laser powers and scanning speeds. It was found that the layer thickness has a strong influence on microstructural outcome, mainly attributed to its impact on oxygen content of the matrix. Various microstructural features (such as granular, coralline-like, and particulate appearance) were observed depending on the layer thickness, laser power, and scanning speed. This was associated with various material combinations such as pure Al, Al-Fe intermetallics, and Al(-Fe) oxide phases formed after in situ reaction and laser rapid solidification. Uniformly distributed very fine particles could be consolidated in net-shape Al composite parts by using lower layer thickness, higher laser power, and lower scanning speed. The findings contribute to the new development of advanced net-shape manufacture of Al composites by combining SLM and in situ reaction process.

  5. Corrosion resistance and biocompatibility of titanium surface coated with amorphous tantalum pentoxide

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ying-Sui [Department of Oral Biology, National Yang-Ming University, Taipei, Taiwan (China); Chang, Jean-Heng [Dental Department, Cheng Hsin General Hospital, Taipei, Taiwan (China); Huang, Her-Hsiung, E-mail: hhhuang@ym.edu.tw [Department of Dentistry, National Yang-Ming University, Taipei, Taiwan (China); Department of Dentistry, Taipei City Hospital, Taipei, Taiwan (China); Department of Stomatology, Taipei Veterans General Hospital, Taipei, Taiwan (China)

    2013-01-01

    Tantalum pentoxide (Ta{sub 2}O{sub 5}) possesses good corrosion resistance and biocompatibility. This study aimed to improve the corrosion resistance and biocompatibility of titanium (Ti) by coating it with an amorphous Ta{sub 2}O{sub 5} surface layer. An amorphous Ta{sub 2}O{sub 5} layer was prepared on the Ti surface using a simple hydrolysis–condensation process at room temperature. The surface characteristics of the test specimens were analyzed using X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, field emission scanning electron microscopy, and contact angle measurements. The corrosion resistance of the test specimens was evaluated from the potentiodynamic polarization curves and ion release measurements in simulated blood plasma (SBP). The biocompatibility of the test specimens was evaluated in terms of the protein (albumin) adsorption, cell adhesion, and cell growth of human bone marrow mesenchymal stem cells (hBMSCs). The amorphous Ta{sub 2}O{sub 5} layer with a porous micro-/nano-scale topography, which was deposited on the Ti surface using a simple hydrolysis–condensation process, increased the corrosion resistance (i.e., increased the corrosion potential and decreased the anodic current and ion release) of the Ti in the SBP and improved the surface wettability, albumin adsorption, and cell adhesion. We conclude that the presence of an amorphous Ta{sub 2}O{sub 5} layer on the Ti surface increased the corrosion resistance and biocompatibility of Ti. - Highlights: ► Amorphous Ta{sub 2}O{sub 5} layer was coated on Ti using simple hydrolysis–condensation process. ► Ta{sub 2}O{sub 5} surface layer showed a micro-/nano-scale porous topography. ► Ta{sub 2}O{sub 5} layer enhanced wettability and corrosion resistance of Ti. ► Ta{sub 2}O{sub 5} layer enhanced protein adsorption, cell adhesion, and cell proliferation of Ti.

  6. A hybrid tandem solar cell based on hydrogenated amorphous silicon and dye-sensitized TiO{sub 2} film

    Energy Technology Data Exchange (ETDEWEB)

    Hao Sancun [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China); Jiangsu Shuangdeng Group Co. Ltd, Thaizhou, Jiangsu, 225526 (China); Wu Jihuai, E-mail: jhwu@hqu.edu.cn [Institute of Materials Physical Chemistry, Huaqiao University, Quanzhou, 362021 (China); Sun Zhonglin [Institute of Photo-Electronics of Nankai University, Tianjin 300071 (China)

    2012-01-01

    Hydrogenated amorphous silicon film (a-Si:H) as top cell is introduced to dye-sensitized titanium dioxide nanocrystalline solar cell (DSSC) as bottom cell to assemble a hybrid tandem solar cell. The hybrid tandem solar cell fabricated with the thicknesses a-Si:H layer of 235 nm, ZnO/Pt interlayer of 100 nm and DSSC layer of 8.5 {mu}m achieves a photo-to-electric energy conversion efficiency of 8.31%, a short circuit current density of 10.61 mA{center_dot}cm{sup -2} and an open-circuit voltage of 1.45 V under a simulated solar light irradiation of 100 mW{center_dot}cm{sup -2}.

  7. Amorphization of metals by ion implantation and ion beam mixing

    International Nuclear Information System (INIS)

    Rauschenbach, B.; Heera, V.

    1988-01-01

    Amorphous metallic systems can be formed either by high-fluence ion implantation of glassforming species or by irradiation of layered metal systems with inert gas ions. Both techniques and experimental examples are presented. Empirical rules are discussed which predict whether a given system can be transformed into an amorphous phase. Influence of temperature, implantation dose and pre-existing crystalline metal composition on amorphization is considered. Examples are given of the implantation induced amorphous structure, recrystallization and formation of quasicrystalline structures. (author)

  8. Ion-beam induced structure modifications in amorphous germanium; Ionenstrahlinduzierte Strukturmodifikationen in amorphem Germanium

    Energy Technology Data Exchange (ETDEWEB)

    Steinbach, Tobias

    2012-05-03

    Object of the present thesis was the systematic study of ion-beam induced structure modifications in amorphous germanium (a-Ge) layers due to low- (LEI) and high-energetic (SHI) ion irradiation. The LEI irradiation of crystalline Ge (c-Ge) effects because the dominating nuclear scattering of the ions on the solid-state atoms the formation of a homogeneous a-Ge Layer. Directly on the surface for fluences of two orders of magnitude above the amorphization fluence the formation of stable cavities independently on the irradiation conditions was observed. For the first time for the ion-beam induced cavity formation respectively for the steady expansion of the porous layer forming with growing fluence a linear dependence on the energy {epsilon}{sub n} deposed in nuclear processes was detected. Furthermore the formation of buried cavities was observed, which shows a dependence on the type of ions. While in the c-Ge samples in the range of the high electronic energy deposition no radiation defects, cavities, or plastic deformations were observed, the high electronic energy transfer in the 3.1 {mu}m thick pre-amorphized a-Ge surface layers leads to the formation of randomly distributed cavities. Basing on the linear connection between cavity-induced vertical volume expansion and the fluence determined for different energy transfers for the first time a material-specific threshold value of {epsilon}{sub e}{sup HRF}=(10.5{+-}1.0) kev nm{sup -1} was determined, above which the ion-beam induced cavity formation in a-Ge sets on. The anisotropic plastic deformation of th a-Ge layer superposed at inclined SHI irradiation on the cavity formation was very well described by an equation derived from the viscoelastic Maxwell model, but modified under regardment of the experimental results. The positive deformation yields determined thereby exhibit above a threshold value for the ion-beam induced plastic deformation {epsilon}{sub e}{sup S{sub a}}=(12{+-}2) keV nm{sup -1} for the first

  9. Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

    Science.gov (United States)

    Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

  10. Effect of γ-(Fe,Ni) crystal-size stabilization in Fe-Ni-B amorphous ribbon

    Science.gov (United States)

    Gorshenkov, M. V.; Glezer, A. M.; Korchuganova, O. A.; Aleev, A. A.; Shurygina, N. A.

    2017-02-01

    The effect of stabilizing crystal size in a melt-quenched amorphous Fe50Ni33B17 ribbon is described upon crystallization in a temperature range of 360-400°C. The shape, size, volume fraction, and volume density have been investigated by transmission electron microscopy and X-ray diffraction methods. The formation of an amorphous layer of the Fe50Ni29B21 compound was found by means of atomic-probe tomography at the boundary of the crystallite-amorphous phase. The stabilization of crystal sizes during annealing is due to the formation of a barrier amorphous layer that has a crystallization temperature that exceeds the crystallization temperature of the matrix amorphous alloy.

  11. Leveraging Subsidence in Permafrost with Remotely Sensed Active Layer Thickness (ReSALT) Products

    Science.gov (United States)

    Schaefer, K. M.; Chen, A.; Chen, J.; Chen, R. H.; Liu, L.; Michaelides, R. J.; Moghaddam, M.; Parsekian, A.; Tabatabaeenejad, A.; Thompson, J. A.; Zebker, H. A.; Meyer, F. J.

    2017-12-01

    The Remotely Sensed Active Layer Thickness (ReSALT) product uses the Interferometric Synthetic Aperture Radar (InSAR) technique to measure ground subsidence in permafrost regions. Seasonal subsidence results from the expansion of soil water into ice as the surface soil or active layer freezes and thaws each year. Subsidence trends result from large-scale thaw of permafrost and from the melting and subsequent drainage of excess ground ice in permafrost-affected soils. The attached figure shows the 2006-2010 average seasonal subsidence from ReSALT around Barrow, Alaska. The average active layer thickness (the maximum surface thaw depth during summer) is 30-40 cm, resulting in an average seasonal subsidence of 1-3 cm. Analysis of the seasonal subsidence and subsidence trends provides valuable insights into important permafrost processes, such as the freeze/thaw of the active layer, large-scale thawing due to climate change, the impact of fire, and infrastructure vulnerability. ReSALT supports the Arctic-Boreal Vulnerability Experiment (ABoVE) field campaign in Alaska and northwest Canada and is a precursor for a potential NASA-ISRO Synthetic Aperture Radar (NISAR) product. ReSALT includes uncertainties for all parameters and is validated against in situ measurements from the Circumpolar Active Layer Monitoring (CALM) network, Ground Penetrating Radar and mechanical probe measurements. Here we present examples of ReSALT products in Alaska to highlight the untapped potential of the InSAR technique to understand permafrost dynamics, with a strong emphasis on the underlying processes that drive the subsidence.

  12. Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology

    Science.gov (United States)

    Krimi, Soufiene; Klier, Jens; Jonuscheit, Joachim; von Freymann, Georg; Urbansky, Ralph; Beigang, René

    2016-07-01

    In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

  13. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  14. Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

    2016-07-29

    Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

  15. The production of UV Absorber amorphous cerium sulfide thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kariper, İshak Afşin, E-mail: akariper@gmail.com [Faculty of Education, Erciyes University, Kayseri (Turkey)

    2017-10-15

    This study investigates the production of cerium sulfide (CeSx) amorphous thin films on substrates (commercial glass) by chemical bath deposition at different pH levels. The transmittance, absorption, optical band gap and refractive index of the films are measured by UV/VIS Spectrum. According to XRD analysis, the films show amorphous structure in the baths with pH: 1 to 5. It has been observed that the optical and structural properties of the films depend on pH value of the bath. The optical band gap (2.08 eV to 3.16 eV) of the films changes with the film thickness (23 nm to 1144 nm). We show that the refractive index has a positive relationship with the film thickness, where the values of 1.93, 1.45, 1.42, 2.60 and 1.39 are obtained for the former, and 34, 560, 509, 23 and 1144 nm (at 550 nm wavelength) for the latter. We compare the optical properties of amorphous and crystal form of CeSx thin films. We show that the optical band gaps of the amorphous CeS{sub x} are lower than that of crystal CeS{sub x} . (author)

  16. Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

    International Nuclear Information System (INIS)

    Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

    2016-01-01

    We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)] 2 /FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T A =200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T A ≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T A =300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T A and temperature. A large reduction in coercivity (H C ) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H C (T), i.e., a broad minimum in H C (T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H C (T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T C ) with T A (x). The multilayer films annealed at 200 °C exhibit low value of T C with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T C with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces. - Highlights: • Preparation and

  17. Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies

    Science.gov (United States)

    Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David; Vilquin, Bertrand; Saint Girons, Guillaume; Pelloquin, Sylvain; Gautier, Brice

    2014-07-01

    The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.

  18. Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies

    International Nuclear Information System (INIS)

    Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David; Gautier, Brice; Vilquin, Bertrand; Saint Girons, Guillaume; Pelloquin, Sylvain

    2014-01-01

    The electromechanical response of a 3 nm thick amorphous LaAlO 3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.

  19. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  20. Effect of Layer Thickness in Selective Laser Melting on Microstructure of Al/5 wt.%Fe2O3 Powder Consolidated Parts

    Directory of Open Access Journals (Sweden)

    Sasan Dadbakhsh

    2014-01-01

    Full Text Available In situ reaction was activated in the powder mixture of Al/5 wt.%Fe2O3 by using selective laser melting (SLM to directly fabricate aluminium metal matrix composite parts. The microstructural characteristics of these in situ consolidated parts through SLM were investigated under the influence of thick powder bed, 75 μm layer thickness, and 50 μm layer thickness in various laser powers and scanning speeds. It was found that the layer thickness has a strong influence on microstructural outcome, mainly attributed to its impact on oxygen content of the matrix. Various microstructural features (such as granular, coralline-like, and particulate appearance were observed depending on the layer thickness, laser power, and scanning speed. This was associated with various material combinations such as pure Al, Al-Fe intermetallics, and Al(-Fe oxide phases formed after in situ reaction and laser rapid solidification. Uniformly distributed very fine particles could be consolidated in net-shape Al composite parts by using lower layer thickness, higher laser power, and lower scanning speed. The findings contribute to the new development of advanced net-shape manufacture of Al composites by combining SLM and in situ reaction process.

  1. Short-range order in amorphous thin films of indium selenides

    International Nuclear Information System (INIS)

    Zakharov, V.P.; Poltavtsev, Yu.G.; Sheremet, G.P.

    1982-01-01

    A structure of the short-range order and a character of interatomic interactions in indium selenides Insub(1-x)Sesub(x) with 0.333 <= x <= 0.75, obtained in the form of amorphous films 0.05-0.80 μm thick are studied using electron diffraction method. It is found out that mostly tetrahedrical coordination of nearest neighbours in the vicinity of indium atoms is characteristic for studied amorphous films, and coordination of selenium atoms is different. Amorphous film with x=0.75 posesses a considereably microheterogeneous structure of the short-range order, which is characterized by the presence of microunclusions of amorphous selenium and atoms of indium, octohedrically coordinated by selenium atoms

  2. Preparation of ultra-thin and high-quality WO{sub 3} compact layers and comparision of WO{sub 3} and TiO{sub 2} compact layer thickness in planar perovskite solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jincheng; Shi, Chengwu, E-mail: shicw506@foxmail.com; Chen, Junjun; Wang, Yanqing; Li, Mingqian

    2016-06-15

    In this paper, the ultra-thin and high-quality WO{sub 3} compact layers were successfully prepared by spin-coating-pyrolysis method using the tungsten isopropoxide solution in isopropanol. The influence of WO{sub 3} and TiO{sub 2} compact layer thickness on the photovoltaic performance of planar perovskite solar cells was systematically compared, and the interface charge transfer and recombination in planar perovskite solar cells with TiO{sub 2} compact layer was analyzed by electrochemical impedance spectroscopy. The results revealed that the optimum thickness of WO{sub 3} and TiO{sub 2} compact layer was 15 nm and 60 nm. The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. - Graphical abstract: The planar perovskite solar cell with 15 nm WO{sub 3} compact layer gave a 9.69% average and 10.14% maximum photoelectric conversion efficiency, whereas the planar perovskite solar cell with 60 nm TiO{sub 2} compact layer achieved a 11.79% average and 12.64% maximum photoelectric conversion efficiency. Display Omitted - Highlights: • Preparation of ultra-thin and high-quality WO{sub 3} compact layers. • Perovskite solar cell with 15 nm-thick WO{sub 3} compact layer achieved PCE of 10.14%. • Perovskite solar cell with 60 nm-thick TiO{sub 2} compact layer achieved PCE of 12.64%.

  3. Characterization of 13 and 30 μm thick hydrogenated amorphous silicon diodes deposited over CMOS integrated circuits for particle detection application

    International Nuclear Information System (INIS)

    Despeisse, M.; Anelli, G.; Commichau, S.; Dissertori, G.; Garrigos, A.; Jarron, P.; Miazza, C.; Moraes, D.; Shah, A.; Wyrsch, N.; Viertel, G.

    2004-01-01

    We present the experimental results obtained with a novel monolithic silicon pixel detector which consists in depositing a n-i-p hydrogenated amorphous silicon (a-Si:H) diode straight above the readout ASIC (this technology is called Thin Film on ASIC, TFA). The characterization has been performed on 13 and 30 μm thick a-Si:H films deposited on top of an ASIC containing a linear array of high-speed low-noise transimpedance amplifiers designed in a 0.25 μm CMOS technology. Experimental results presented have been obtained with a 600 nm pulsed laser. The results of charge collection efficiency and charge collection speed of these structures are discussed

  4. Spatial representation of organic carbon and active-layer thickness of high latitude soils in CMIP5 earth system models

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Umakant; Drewniak, Beth; Jastrow, Julie D.; Matamala, Roser M.; Vitharana, U. W. A.

    2017-08-01

    Soil properties such as soil organic carbon (SOC) stocks and active-layer thickness are used in earth system models (F.SMs) to predict anthropogenic and climatic impacts on soil carbon dynamics, future changes in atmospheric greenhouse gas concentrations, and associated climate changes in the permafrost regions. Accurate representation of spatial and vertical distribution of these soil properties in ESMs is a prerequisite for redudng existing uncertainty in predicting carbon-climate feedbacks. We compared the spatial representation of SOC stocks and active-layer thicknesses predicted by the coupled Modellntercomparison Project Phase 5 { CMIP5) ESMs with those predicted from geospatial predictions, based on observation data for the state of Alaska, USA. For the geospatial modeling. we used soil profile observations {585 for SOC stocks and 153 for active-layer thickness) and environmental variables (climate, topography, land cover, and surficial geology types) and generated fine-resolution (50-m spatial resolution) predictions of SOC stocks (to 1-m depth) and active-layer thickness across Alaska. We found large inter-quartile range (2.5-5.5 m) in predicted active-layer thickness of CMIP5 modeled results and small inter-quartile range (11.5-22 kg m-2) in predicted SOC stocks. The spatial coefficient of variability of active-layer thickness and SOC stocks were lower in CMIP5 predictions compared to our geospatial estimates when gridded at similar spatial resolutions (24.7 compared to 30% and 29 compared to 38%, respectively). However, prediction errors. when calculated for independent validation sites, were several times larger in ESM predictions compared to geospatial predictions. Primaly factors leading to observed differences were ( 1) lack of spatial heterogeneity in ESM predictions, (2) differences in assumptions concerning environmental controls, and (3) the absence of pedogenic processes in ESM model structures. Our results suggest that efforts to incorporate

  5. Amino Acid Composition, Urease Activity and Trypsin Inhibitor Activity after Toasting of Soybean in Thick and Thin Layer

    OpenAIRE

    Krička, Tajana; Jurišić, Vanja; Voća, Neven; Ćurić, Duška; Brlek Savić, Tea; Matin, Ana

    2009-01-01

    The objective of this study was to determine amino acid content, urease activity and trypsin inhibitor activity in soybean grain for polygastric animals’ feed aft er toasting with the aim to introduce thick layer in toasting technology. Hence, soybean was toasted both in thick and thin layer at 130 oC during 10 minutes. In order to properly monitor the technological process of soybean thermal processing, it was necessary to study crude protein content, urease activity, trypsin inhibitor activ...

  6. Efficient inverted bulk-heterojunction solar cells from low-temperature processing of amorphous ZnO buffer layers

    KAUST Repository

    Jagadamma, Lethy Krishnan; Abdelsamie, Maged; El Labban, Abdulrahman; Aresu, Emanuele; Ngongang Ndjawa, Guy Olivier; Anjum, Dalaver H.; Cha, Dong Kyu; Beaujuge, Pierre; Amassian, Aram

    2014-01-01

    In this report, we demonstrate that solution-processed amorphous zinc oxide (a-ZnO) interlayers prepared at low temperatures (∼100 °C) can yield inverted bulk-heterojunction (BHJ) solar cells that are as efficient as nanoparticle-based ZnO requiring comparably more complex synthesis or polycrystalline ZnO films prepared at substantially higher temperatures (150-400 °C). Low-temperature, facile solution-processing approaches are required in the fabrication of BHJ solar cells on flexible plastic substrates, such as PET. Here, we achieve efficient inverted solar cells with a-ZnO buffer layers by carefully examining the correlations between the thin film morphology and the figures of merit of optimized BHJ devices with various polymer donors and PCBM as the fullerene acceptor. We find that the most effective a-ZnO morphology consists of a compact, thin layer with continuous substrate coverage. In parallel, we emphasize the detrimental effect of forming rippled surface morphologies of a-ZnO, an observation which contrasts with results obtained in polycrystalline ZnO thin films, where rippled morphologies have been reported to improve efficiency. After optimizing the a-ZnO morphology at low processing temperature for inverted P3HT:PCBM devices, achieving a power conversion efficiency (PCE) of ca. 4.1%, we demonstrate inverted solar cells with low bandgap polymer donors on glass/flexible PET substrates: PTB7:PC71BM (PCE: 6.5% (glass)/5.6% (PET)) and PBDTTPD:PC71BM (PCE: 6.7% (glass)/5.9% (PET)). Finally, we show that a-ZnO based inverted P3HT:PCBM BHJ solar cells maintain ca. 90-95% of their initial PCE even after a full year without encapsulation in a nitrogen dry box, thus demonstrating excellent shelf stability. The insight we have gained into the importance of surface morphology in amorphous zinc oxide buffer layers should help in the development of other low-temperature solution-processed metal oxide interlayers for efficient flexible solar cells. This journal is

  7. Study on coated layer material performance of coated particle fuel FBR (2). High temperature property and capability of coating to thick layer of TiN

    International Nuclear Information System (INIS)

    Naganuma, Masayuki; Mizuno, Tomoyasu

    2002-08-01

    'Helium Gas Cooled Coated Particle Fuel FBR' is one of attractive core concepts in the Feasibility Study on Commercialized Fast Reactor Cycle System in Japan, and the design study is presently proceeded. As one of key technologies of this concept, the coated layer material is important, and ceramics is considered to be a candidate material because of the superior refractory. Based on existing knowledge, TiN is regarded to be a possible candidate material, to which some property tests and evaluations have been conducted. In this study, preliminary tests about the high temperature property and the capability of thick layer coating of TiN have been conducted. Results of these tests come to the following conclusions. Heating tests of two kinds of TiN layer specimens coated by PVD (Physical Vapor Deposition) and CVD (Chemical Vapor Deposition) were conducted. As a result, as for CVD coating specimens, remarkable charge was not observed on the layer up to 2,000degC, therefore we concluded that the layer by CVD had applicability up to high temperature of actual operation level. On the other hand, as for PVD coating specimens, an unstable behavior that the layer changed to a mesh like texture was observed on a 2,000degC heated specimen, therefore the applied PVD method is not considered to be promising as the coating technique. The surface conditions of some parts inside CVD device were investigated in order to evaluate possibility of TiN thick coating (∼100 μm). As a result, around 500 μm of TiN coating layer was observed on the condition of multilayer. Therefore, we conclude that CVD has capability of coating up to thick layer in actual coated particle fuel fabrication. (author)

  8. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    Science.gov (United States)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  9. Effect of the thickness of Zn(BTZ){sub 2} emitting layer on the electroluminescent spectra of white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, F.J. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Hua, Y.L. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China)]. E-mail: yulinhua@tjut.edu.cn; Yin, S.G. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Deng, J.C. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, K.W. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Niu, X. [Institute of Material Physics, Tianjin University of Technology, Tianjin 300191 (China); Wu, X.M. [Institute of Modern Optics, Nankai University, Tianjin 300191 (China); Petty, M.C. [Centre for Molecular and Nanoscale Electronics, University of Durham, Durham DH1 3LE (United Kingdom)

    2007-01-15

    White organic light-emitting diodes (OLEDs) are fabricated with a simple bilayer structure: ITO/TPD/ Zn(BTZ){sub 2}/Al. White emission is composed of two parts: one is 470 nm, which originates from exciton emission in Zn(BTZ){sub 2} emitting layer; the other is 580 nm, which originates from exciplexes formation at the interface of TPD and Zn(BTZ){sub 2}. Specially, the thickness of Zn(BTZ){sub 2} layer effects the relative intensity of two emissions. When the Zn(BTZ){sub 2} layer becomes thin (or thick), the 470 nm (or 580 nm) emission intensity turns into weak (or strong). Finally, We successfully fabricated pure white OLED when the thickness of Zn(BTZ){sub 2} layer was 65 nm.

  10. Exclusive Hydrogen Generation by Electrocatalysts Coated with an Amorphous Chromium-Based Layer Achieving Efficient Overall Water Splitting

    KAUST Repository

    Qureshi, Muhammad

    2017-08-08

    Successful conversion of renewable energy to useful chemicals requires efficient devices that can electrocatalyze or photocatalyze redox reactions, e.g., overall water splitting. Excellent electrocatalysts for the hydrogen evolution reaction (HER), such as Pt, can also cause other side-reactions, including the water-forming back-reaction from H2 and O2 products. A Cr-based amorphous layer coated on catalysts can work as a successful surface modifier that avoids the back-reaction, but its capabilities and limitations toward other species have not been studied. Herein, we investigated the Cr-based layer on Pt from perspectives of both electrocatalysis and photocatalysis using redox-active molecules/ions (O2, ferricyanide, IO3–, S2O82–, H2O2, and CO gas). Our systematic study revealed that utilization of the Cr-based layer realized an exclusive cathodic reaction only to HER, even in the presence of the aforementioned reactive species, suggesting that Cr-based layers work as membranes, as well as corrosion and poison inhibition layers. However, the Cr-based layer experienced self-oxidation and dissolved into the aqueous phase when a strong oxidizing agent or low pH was present. Presented herein are fundamental and critical aspects of the Cr-based modifier, which is essential for the successful and practical development of solar fuel production systems.

  11. Exclusive Hydrogen Generation by Electrocatalysts Coated with an Amorphous Chromium-Based Layer Achieving Efficient Overall Water Splitting

    KAUST Repository

    Qureshi, Muhammad; Shinagawa, Tatsuya; Tsiapis, Nikolaos; Takanabe, Kazuhiro

    2017-01-01

    Successful conversion of renewable energy to useful chemicals requires efficient devices that can electrocatalyze or photocatalyze redox reactions, e.g., overall water splitting. Excellent electrocatalysts for the hydrogen evolution reaction (HER), such as Pt, can also cause other side-reactions, including the water-forming back-reaction from H2 and O2 products. A Cr-based amorphous layer coated on catalysts can work as a successful surface modifier that avoids the back-reaction, but its capabilities and limitations toward other species have not been studied. Herein, we investigated the Cr-based layer on Pt from perspectives of both electrocatalysis and photocatalysis using redox-active molecules/ions (O2, ferricyanide, IO3–, S2O82–, H2O2, and CO gas). Our systematic study revealed that utilization of the Cr-based layer realized an exclusive cathodic reaction only to HER, even in the presence of the aforementioned reactive species, suggesting that Cr-based layers work as membranes, as well as corrosion and poison inhibition layers. However, the Cr-based layer experienced self-oxidation and dissolved into the aqueous phase when a strong oxidizing agent or low pH was present. Presented herein are fundamental and critical aspects of the Cr-based modifier, which is essential for the successful and practical development of solar fuel production systems.

  12. Effect of the thickness of the anode electrode catalyst layers on the performance in direct methanol fuel cells

    Science.gov (United States)

    Glass, Dean E.; Olah, George A.; Prakash, G. K. Surya

    2017-06-01

    For the large scale fuel cell manufacture, the catalyst loading and layer thickness are critical factors affecting the performance and cost of membrane electrode assemblies (MEAs). The influence of catalyst layer thicknesses at the anode of a PEM based direct methanol fuel cell (DMFC) has been investigated. Catalysts were applied with the drawdown method with varied thicknesses ranging from 1 mil to 8 mils (1 mil = 25.4 μm) with a Pt/Ru anode loading of 0.25 mg cm-2 to 2.0 mg cm-2. The MEAs with the thicker individual layers (8 mils and 4 mils) performed better overall compared to the those with the thinner layers (1 mil and painted). The peak power densities for the different loading levels followed an exponential decrease of Pt/Ru utilization at the higher loading levels. The highest power density achieved was 49 mW cm-2 with the 4 mil layers at 2.0 mg cm-2 catalyst loading whereas the highest normalized power density was 116 mW mg-1 with the 8 mil layers at 0.25 mg cm-2 loading. The 8 mil drawdowns displayed a 50% and 23% increase in normalized power density compared to the 1 mil drawdowns at 0.25 mg cm-2 and 0.5 mg cm-2 loadings, respectively.

  13. Correlation between central corneal thickness and visual field defects, cup to disc ratio and retinal nerve fiber layer thickness in primary open angle glaucoma patients.

    Science.gov (United States)

    Sarfraz, Muhammad Haroon; Mehboob, Mohammad Asim; Haq, Rana Intisar Ul

    2017-01-01

    To evaluate the correlation between Central Corneal Thickness (CCT) and Visual Field (VF) defect parameters like Mean Deviation (MD) and Pattern Standard Deviation (PSD), Cup-to-Disc Ratio (CDR) and Retinal Nerve Fibre Layer Thickness (RNFL-T) in Primary Open-Angle Glaucoma (POAG) patients. This cross sectional study was conducted at Armed Forces Institute of Ophthalmology (AFIO), Rawalpindi from September 2015 to September 2016. Sixty eyes of 30 patients with diagnosed POAG were analysed. Correlation of CCT with other variables was studied. Mean age of study population was 43.13±7.54 years. Out of 30 patients, 19 (63.33%) were males and 11 (36.67%) were females. Mean CCT, MD, PSD, CDR and RNFL-T of study population was 528.57±25.47µm, -9.11±3.07, 6.93±2.73, 0.63±0.13 and 77.79±10.44µm respectively. There was significant correlation of CCT with MD, PSD and CDR (r=-0.52, pfield parameters like mean deviation and pattern standard deviation, as well as with cup-to-disc ratio. However, central corneal thickness had no significant relationship with retinal nerve fibre layer thickness.

  14. Evolution of Ternary AuAgPd Nanoparticles by the Control of Temperature, Thickness, and Tri-Layer

    Directory of Open Access Journals (Sweden)

    Sundar Kunwar

    2017-11-01

    Full Text Available Metallic alloy nanoparticles (NPs possess great potential to enhance the optical, electronic, chemical, and magnetic properties for various applications by the control of morphology and elemental composition. This work presents the fabrication of ternary AuAgPd alloy nanostructures on sapphire (0001 via the solid-state dewetting of sputter-deposited tri-metallic layers. Based on the systematic control of temperature, thickness, and deposition order of tri-layers, the composite AuAgPd alloy nanoparticles (NPs with various shape, size, and density are demonstrated. The metallic tri-layers exhibit various stages of dewetting based on the increasing growth temperatures between 400 and 900 °C at 15 nm tri-layer film thickness. Specifically, the nucleation of tiny voids and hillocks, void coalescence, the growth and isolated nanoparticle formation, and the shape transformation with Ag sublimation are observed. With the reduced film thickness (6 nm, tiny alloy NPs with improved structural uniformity and spatial arrangement are obtained due to enhanced dewetting. The growth trend of alloy NPs is drastically altered by changing the deposition order of metallic tri-layers. The overall evolution is governed by the surface diffusion and inter-mixing of metallic atoms, Rayleigh-like instability, surface and interface energy minimization, and equilibrium state of the system. The UV-VIS-NIR reflectance spectra reveal the formation of an absorption band and reflectance maxima at specific wavelengths based on the morphology and composition of AuAgPd alloy NPs. In addition, Raman spectra analysis shows the modulation of intensity and peak position of natural vibration modes of sapphire (0001.

  15. Study on the substrate-induced crystallisation of amorphous SiC-precursor ceramics. TIB/A; Untersuchungen zur substratinduzierten Kristallisation amorpher SiC-Precursorkeramiken

    Energy Technology Data Exchange (ETDEWEB)

    Rau, C.

    2000-12-01

    In the present thesis the crystallization behaviour of amorphous silicon-carbon materials (SiC{sub x}) was studied. The main topic of the experimental studies formed thereby the epitactical crystallization of thin silicon carbide layers on monocrystalline substrates of silicon carbides or silicon. Furthermore by thermolysis of the polymer amorphous SiC{sub x}-powder was obtained.

  16. Normative data of outer photoreceptor layer thickness obtained by software image enhancing based on Stratus optical coherence tomography images

    DEFF Research Database (Denmark)

    Christensen, U.C.; Krøyer, K.; Thomadsen, Jakob

    2008-01-01

    backscattered light within the outer nuclear layer (ONL) in the fovea was registered and compared with backscattered light within the ONL in the peripheral part of the macula (I-ratio-ONL). Results: The mean RPE-OScomplex thickness in the foveal centre was 77.2 mu m (SD = 3.95). The RPE-OScomplex thickness...... in the superior macula 0.5-3 mm of the centre was significantly increased as compared with the corresponding inferior retina. In healthy subjects, the I-ratio-ONL was 1.06. Conclusions: Contrast-enhanced OCT images enable quantification of outer photoreceptor layer thickness, and normative values may help...

  17. Pulsations of white dwarf stars with thick hydrogen or helium surface layers

    Energy Technology Data Exchange (ETDEWEB)

    Cox, A.N.; Starrfield, S.G.; Kidman, R.B.; Pesnell, W.D.

    1986-07-01

    In order to see if there could be agreement between results of stellar evolution theory and those of nonradial pulsation theory, calculations of white dwarf models have been made for hydrogen surface masses of 10/sup -4/ solar masses. Earlier results indicated that surface masses greater than 10/sup -8/ solar masses would not allow nonradial pulsations, even though all the driving and damping is in surface layers only 10/sup -12/ of the mass thick. It is shown that the surface mass of hydrogen in the pulsating white dwarfs (ZZ Ceti variables) can be any value as long as it is thick enough to contain the surface convection zone. 10 refs., 6 figs.

  18. Highly accurate thickness measurement of multi-layered automotive paints using terahertz technology

    International Nuclear Information System (INIS)

    Krimi, Soufiene; Beigang, René; Klier, Jens; Jonuscheit, Joachim; Freymann, Georg von; Urbansky, Ralph

    2016-01-01

    In this contribution, we present a highly accurate approach for thickness measurements of multi-layered automotive paints using terahertz time domain spectroscopy in reflection geometry. The proposed method combines the benefits of a model-based material parameters extraction method to calibrate the paint coatings, a generalized Rouard's method to simulate the terahertz radiation behavior within arbitrary thin films, and the robustness of a powerful evolutionary optimization algorithm to increase the sensitivity of the minimum thickness measurement limit. Within the framework of this work, a self-calibration model is introduced, which takes into consideration the real industrial challenges such as the effect of wet-on-wet spray in the painting process.

  19. Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell

    Science.gov (United States)

    Park, Tae Hyung; Song, Seul Ji; Kim, Hae Jin; Kim, Soo Gil; Chung, Suock; Kim, Beom Yong; Lee, Kee Jeung; Kim, Kyung Min; Choi, Byung Joon; Hwang, Cheol Seong

    2015-11-01

    Resistance switching (RS) devices with ultra-thin Ta2O5 switching layer (0.5-2.0 nm) with a cell diameter of 28 nm were fabricated. The performance of the devices was tested by voltage-driven current—voltage (I-V) sweep and closed-loop pulse switching (CLPS) tests. A Ta layer was placed beneath the Ta2O5 switching layer to act as an oxygen vacancy reservoir. The device with the smallest Ta2O5 thickness (0.5 nm) showed normal switching properties with gradual change in resistance in I-V sweep or CLPS and high reliability. By contrast, other devices with higher Ta2O5 thickness (1.0-2.0 nm) showed abrupt switching with several abnormal behaviours, degraded resistance distribution, especially in high resistance state, and much lower reliability performance. A single conical or hour-glass shaped double conical conducting filament shape was conceived to explain these behavioural differences that depended on the Ta2O5 switching layer thickness. Loss of oxygen via lateral diffusion to the encapsulating Si3N4/SiO2 layer was suggested as the main degradation mechanism for reliability, and a method to improve reliability was also proposed.

  20. Quantification of the effect of oil layer thickness on entrainment of surface oil

    NARCIS (Netherlands)

    Klaas Dijkstra; Albertinka J. Murk; Marieke Zeinstra-Helfrich; Wierd Koops

    2015-01-01

    This study quantifies the effect of oil layer thickness on entrainment and dispersion of oil into seawater, using a plunging jet with a camera system. In contrast to what is generally assumed, we revealed that for the low viscosity “surrogate MC252 oil” we used, entrainment rate is directly

  1. Protective amorphous carbon coatings on glass substrates

    Science.gov (United States)

    Silins, Kaspars; Baránková, Hana; Bardos, Ladislav

    2017-11-01

    Thick amorphous carbon films were deposited by the Magnets-in-Motion (M-M) rf linear hollow cathode at varying acetylene contents in Ar in a hybrid PVD/PE-CVD process directly on glass substrates. The hollow cathode plates manufactured from graphite were used as the PVD target. The measurements show that the films can reach thickness of up to 50 μm at deposition rates of up to 2.5 μm/min. Scratch test measurements confirm that well adhering films several μm thick can be achieved at C2H2 contents of up to 0.5%.

  2. A humidity sensitive two-dimensional tunable amorphous photonic structure in the outer layer of bivalve ligament from Sunset Siliqua

    International Nuclear Information System (INIS)

    Zhang, Weigang; Zhang, Gangsheng

    2015-01-01

    A humidity sensitive two-dimensional tunable amorphous photonic structure (2D TAPS) in the outer layer of bivalve ligament from Sunset Siliqua (OLLS) was reported in this paper. The structural color and microstructure of OLLS were investigated by reflection spectra and scanning electron microscopy, respectively. The results indicate that the reflection peak wavelength of the wet OLLS blue-shifts from 454 nm to 392 nm with the increasing of air drying time from 0 to 40 min, while the reflectivity decreases gradually and vanishes at last, relevant color changes from blue to black background color. The structural color in the OLLS is produced by a two-dimensional amorphous photonic structure consisting of aligned protein fibers, in which the diameter of protein fiber and the inter-fiber spacing are 101 ± 12 nm. Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure, and the regulation achieved through dynamically tuning the interaction between inter-fiber spacing and average refractive index. - Highlights: • A humidity sensitive two-dimensional tunable amorphous photonic structure • Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure. • This photonic structure may yield very useful template for artificial structures

  3. A humidity sensitive two-dimensional tunable amorphous photonic structure in the outer layer of bivalve ligament from Sunset Siliqua

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Weigang, E-mail: abczwg15@163.com [College of Materials and Chemical Engineering, Chuzhou University, Chuzhou 239000 (China); Zhang, Gangsheng [College of Material Science and Technology, Guangxi University, Nanning 530004 (China)

    2015-07-01

    A humidity sensitive two-dimensional tunable amorphous photonic structure (2D TAPS) in the outer layer of bivalve ligament from Sunset Siliqua (OLLS) was reported in this paper. The structural color and microstructure of OLLS were investigated by reflection spectra and scanning electron microscopy, respectively. The results indicate that the reflection peak wavelength of the wet OLLS blue-shifts from 454 nm to 392 nm with the increasing of air drying time from 0 to 40 min, while the reflectivity decreases gradually and vanishes at last, relevant color changes from blue to black background color. The structural color in the OLLS is produced by a two-dimensional amorphous photonic structure consisting of aligned protein fibers, in which the diameter of protein fiber and the inter-fiber spacing are 101 ± 12 nm. Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure, and the regulation achieved through dynamically tuning the interaction between inter-fiber spacing and average refractive index. - Highlights: • A humidity sensitive two-dimensional tunable amorphous photonic structure • Water can reversibly tune the reflection peak wavelength and reflectivity of this photonic structure. • This photonic structure may yield very useful template for artificial structures.

  4. Usage of neural network to predict aluminium oxide layer thickness.

    Science.gov (United States)

    Michal, Peter; Vagaská, Alena; Gombár, Miroslav; Kmec, Ján; Spišák, Emil; Kučerka, Daniel

    2015-01-01

    This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage) and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A · dm(-2) and 3 A · dm(-2) for creating aluminium oxide layer.

  5. Usage of Neural Network to Predict Aluminium Oxide Layer Thickness

    Directory of Open Access Journals (Sweden)

    Peter Michal

    2015-01-01

    Full Text Available This paper shows an influence of chemical composition of used electrolyte, such as amount of sulphuric acid in electrolyte, amount of aluminium cations in electrolyte and amount of oxalic acid in electrolyte, and operating parameters of process of anodic oxidation of aluminium such as the temperature of electrolyte, anodizing time, and voltage applied during anodizing process. The paper shows the influence of those parameters on the resulting thickness of aluminium oxide layer. The impact of these variables is shown by using central composite design of experiment for six factors (amount of sulphuric acid, amount of oxalic acid, amount of aluminium cations, electrolyte temperature, anodizing time, and applied voltage and by usage of the cubic neural unit with Levenberg-Marquardt algorithm during the results evaluation. The paper also deals with current densities of 1 A·dm−2 and 3 A·dm−2 for creating aluminium oxide layer.

  6. Thickness, Doping Accuracy, and Roughness Control in Graded Germanium Doped Ch{sub x} Micro-shells for Lmj

    Energy Technology Data Exchange (ETDEWEB)

    Legay, G.; Theobald, M.; Barnouin, J.; Peche, E.; Bednarczyk, S.; Hermerel, C. [CEA Valduc, Dept Rech Mat Nucl, Serv Microcibles, 21 - Is-sur-Tille (France)

    2009-05-15

    In the Commissariat a l'Energie Atomique Laser Megajoule (LMJ) facility, amorphous hydrogenated carbon (a-C: H or CH{sub x}) is the nominal ablator used to achieve inertial confinement fusion experiments. These targets are filled with of fusible mixture of deuterium-tritium in order to perform ignition. The a-C: H shell is deposited on a poly-alpha-methylstyrene (PAMS) mandrel by glow discharge polymerization with trans-2-butene, hydrogen, and helium. Graded germanium doped CH{sub x} micro-shells are supposed to be more stable regarding hydrodynamic instabilities. The shells are composed of four layers for a total thickness of 180 {mu}m. The germanium gradient is obtained by doping the different a-C: H layers with the addition of tetra-methylgermanium in the gas mixture. As the achievement of ignition greatly depends on the physical properties of the shell, the thicknesses, doping concentration, and roughness must be precisely controlled. Quartz microbalances were used to perform an in situ and real-time measurement of the thickness in order to reduce the variations and so our fabrication tolerances on each layer thickness. Ex situ control of the thickness of each layer was carried out, with both optical coherent tomography and interferometry, (wall-mapper). High-quality, PAMS and a rolling system have been used to lower the low-mode roughness [root-mean-square (rms) (mode 2) {<=} 70 nm]. High modes were clearly, reduced by, coating the pan containing the shells with polyvinyl alcohol + CH{sub x} instead of polystyrene + CH{sub x} resulting in an rms ({>=}mode 10) {<=} 20 nm, which can be {<=}15 nm for the best micro-shells. The germanium concentration (0. 4 and 0. 75 at. %) in the a-CH layer is obtained by regulating the tetramethyl-germanium flow. Low range mass flow controllers have been used to improve the doping accuracy. (authors)

  7. Amorphization, morphological instability and crystallization of krypton ion irradiated germanium

    International Nuclear Information System (INIS)

    Wang, L.M.; Birtcher, R.C.

    1991-01-01

    Krypton ion irradiation of crystalline Ge and subsequent thermal annealing were both carried out with in situ transmission electron microscopy observations. The temperature dependence of the amorphization dose, effect of foil thickness, morphological changes during continuous irradiation of the amorphous state as well as the effect of implanted gas have been determined. The dose of 1.5 MeV Kr required for amorphization increases with increasing temperature. At a fixed temperature, the amorphization dose is higher for thicker regions of the specimen. Continuous irradiation of amorphous Ge at room temperature results in a high density of small cavities which grow with increasing dose. Cavities do not coalesce during growth but develop into irregular-shaped holes that eventually transform the amorphous Ge into a sponge-like material. Formation of the spongy structure is independent of Kr implantation. The crystallization temperature and the morphology of recrystallized Ge depend on the Kr + dose. Voids are expelled from recrystallized Ge, while the sponge-like structure is retained after crystallization. (author)

  8. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Perez-Mendez, V.; Morel, J.; Kaplan, S.N.; Street, R.A.

    1986-02-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics

  9. Retinal nerve fiber layer thickness in normals measured by spectral domain OCT.

    Science.gov (United States)

    Bendschneider, Delia; Tornow, Ralf P; Horn, Folkert K; Laemmer, Robert; Roessler, Christopher W; Juenemann, Anselm G; Kruse, Friedrich E; Mardin, Christian Y

    2010-09-01

    To determine normal values for peripapillary retinal nerve fiber layer thickness (RNFL) measured by spectral domain Optical Coherence Tomography (SOCT) in healthy white adults and to examine the relationship of RNFL with age, gender, and clinical variables. The peripapillary RNFL of 170 healthy patients (96 males and 74 females, age 20 to 78 y) was imaged with a high-resolution SOCT (Spectralis HRA+OCT, Heidelberg Engineering) in an observational cross-sectional study. RNFL thickness was measured around the optic nerve head using 16 automatically averaged, consecutive circular B-scans with 3.4-mm diameter. The automatically segmented RNFL thickness was divided into 32 segments (11.25 degrees each). One randomly selected eye per subject entered the study. Mean RNFL thickness in the study population was 97.2 ± 9.7 μm. Mean RNFL thickness was significantly negatively correlated with age (r = -0.214, P = 0.005), mean RNFL decrease per decade was 1.90 μm. As age dependency was different in different segments, age-correction of RNFL values was made for all segments separately. Age-adjusted RNFL thickness showed a significant correlation with axial length (r = -0.391, P = 0.001) and with refractive error (r = 0.396, P<0.001), but not with disc size (r = 0.124). Normal RNFL results with SOCT are comparable to those reported with time-domain OCT. In accordance with the literature on other devices, RNFL thickness measured with SOCT was significantly correlated with age and axial length. For creating a normative database of SOCT RNFL values have to be age adjusted.

  10. Effect of amorphous lamella on the crack propagation behavior of crystalline Mg/amorphous Mg-Al nanocomposites

    Science.gov (United States)

    Hai-Yang, Song; Yu-Long, Li

    2016-02-01

    The effects of amorphous lamella on the crack propagation behavior in crystalline/amorphous (C/A) Mg/Mg-Al nanocomposites under tensile loading are investigated using the molecular dynamics simulation method. The sample with an initial crack of orientation [0001] is considered here. For the nano-monocrystal Mg, the crack growth exhibits brittle cleavage. However, for the C/A Mg/Mg-Al nanocomposites, the ‘double hump’ behavior can be observed in all the stress-strain curves regardless of the amorphous lamella thickness. The results indicate that the amorphous lamella plays a critical role in the crack deformation, and it can effectively resist the crack propagation. The above mentioned crack deformation behaviors are also disclosed and analyzed in the present work. The results here provide a strategy for designing the high-performance hexagonal-close-packed metal and alloy materials. Project supported by the National Natural Science Foundation of China (Grant Nos. 11372256 and 11572259), the 111 Project (Grant No. B07050), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-12-1046), and the Program for New Scientific and Technological Star of Shaanxi Province, China (Grant No. 2012KJXX-39).

  11. Relationship between reaction layer thickness and leach rate for nuclear waste glasses

    International Nuclear Information System (INIS)

    Chick, L.A.; Pederson, L.R.

    1984-02-01

    Three leaching tests, devised to distinguish among several proposed nuclear waste glass leaching mechanisms, were carried out for four different waste glasses. In the first test, the influence of a pre-formed reaction layer on elemental release was evaluated. In the second test, glass specimens were replaced with fresh samples halfway through the leaching experiment, to evaluate the influence of the concentration of glass components in leaching. Finally, regular replacement of the leachant at fixed time intervals essentially removed the variable changing solution concentration, and allowed an assessment of the influence of reaction layer thickness on the leaching rate. Results for all glasses tested indicated that the reaction layer presented little or no barrier to leaching, and that most of the retardation on leaching rates generally observed are attributable to saturation effects. 20 references, 6 figures, 1 table

  12. Effect of preparation conditions on the properties of glow-discharge intrinsic amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gutierrez, M T; Carabe, J; Gandia, J J [Inst. de Energias Renovables, CIEMAT, Madrid (Spain); Solonko, A [Inst. of High Temperatures of the USSR (IVTAN), Academy of Sciences, Moscow (USSR)

    1992-04-01

    The influence of the preparation conditions (process pressure, substrate temperature, RF-power density and deposition time/thickness) on the optical and electrical properties of intrinsic hydrogenated amorphous silicon (a-Si:H) has been investigated with the aim of optimising such films to be used as absorbent layers of a-Si:H-based p-i-n solar cells. Highly photosensitive films have been obtained at high growth rates (6.2 A s{sup -1}) in the depletion regime using a high process pressure (1000 mTorr), a moderate substrate temperature (250deg C) and a relatively high RF-power density (35.2 mW cm{sup -2}). These films have excellent properties for the application in question. (orig.).

  13. Effects of the Buffer Layers on the Adhesion and Antimicrobial Properties of the Amorphous ZrAlNiCuSi Films

    Science.gov (United States)

    Chiang, Pai-Tsung; Chen, Guo-Ju; Jian, Sheng-Rui; Shih, Yung-Hui

    2011-06-01

    To extend the practical applications of the bulk metallic glasses (BMGs), the preparation of the metallic glass coatings on various substrates becomes an important research issue. Among the interfacial properties of the coatings, the adhesion between films and substrates is the most crucial. In this study, amorphous Zr61Al7.5Ni10Cu17.5Si4 (ZrAlNiCuSi) thin films were deposited on SUS304 stainless steel at various sputtering powers by DC sputtering. According to the scratch tests, the introduction of the Cr and Ti buffer layers effectively improves the adhesion between the amorphous thin films and substrate without changing the surface properties, such as roughness and morphology. The antimicrobial results show that the biological activities of these microbes, except Acinetobacter baumannii, are effectively suppressed during the test period.

  14. Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, G.; Treilleux, M.; Santos Aires, F.; Cabaud, B.; Melinon, P.; Hoareau, A. (Lyon-1 Univ., 69 - Villeurbanne (France))

    1991-03-01

    In order to understand the differences existing between films obtained with a classical molecular beam deposition (MBD) and the new low-energy cluster beam deposition (LECBD), transmission electron microscopy has been used to characterize the first stages of antimony LECBD. Antimony deposits are discontinuous and amorphous up to 2 nm in thickness. They are formed with isolated amorphous antimony particles surrounded by an amorphous antimony oxide shell. Moreover, under electron beam exposure in the microscope, an amorphous-crystal transformation has been observed in the oxide shell. Electron irradiation induces the formation of a crystallized antimony oxide (Sb{sub 2}O{sub 3}) around the amorphous antimony core. (author).

  15. Development of shear bands in amorphous-crystalline metallic alloys

    International Nuclear Information System (INIS)

    Pozdnyakov, V.A.

    2004-01-01

    A theoretical study is made into conditions of shear band evolution in amorphous-crystalline alloys with various morphological types of structural constituents. The condition of shear band evolution in thin amorphous alloys in the interior of the crystalline matrix is obtained. It is shown that a scale effect exists which manifests itself in suppression of the process of localized plastic flow with amorphous alloy thickness decreasing down to the limit. The analysis of the condition for shear band evolution in an amorphous alloy with nanocrystalline inclusions is accomplished. The relationship of a critical stress of shear band evolution to a volume fraction of disperse crystal inclusions is obtained. A consideration is also given to the evolution of shear bands in the material containing amorphous and crystalline areas of micro meter size. For the alloy with the structure of this type conditions for propagation of localized flows by a relay race type mechanism are determined [ru

  16. Thermal expansion coefficient measurement from electron diffraction of amorphous films in a TEM.

    Science.gov (United States)

    Hayashida, Misa; Cui, Kai; Malac, Marek; Egerton, Ray

    2018-05-01

    We measured the linear thermal expansion coefficients of amorphous 5-30 nm thick SiN and 17 nm thick Formvar/Carbon (F/C) films using electron diffraction in a transmission electron microscope. Positive thermal expansion coefficient (TEC) was observed in SiN but negative coefficients in the F/C films. In case of amorphous carbon (aC) films, we could not measure TEC because the diffraction radii required several hours to stabilize at a fixed temperature. Crown Copyright © 2018. Published by Elsevier B.V. All rights reserved.

  17. Thickness of the Macula, Retinal Nerve Fiber Layer, and Ganglion Cell Layer in the Epiretinal Membrane: The Repeatability Study of Optical Coherence Tomography.

    Science.gov (United States)

    Lee, Haeng-Jin; Kim, Min-Su; Jo, Young-Joon; Kim, Jung-Yeul

    2015-07-01

    To analyze the repeatability of measurements of the thicknesses of the macula, retinal nerve fiber layer (RNFL), and ganglion cell inner plexiform layer (GCIPL) using spectral-domain optical coherence tomography (SD-OCT) in the epiretinal membrane (ERM). The prospective study analyzed patients who visited our retinal clinic from June 2013 to January 2014. An experienced examiner measured the thicknesses twice using macular cube 512 × 128 and optic disc cube 200 × 200 scans. The repeatability of the thicknesses of the macula, RNFL, and GCIPL were compared using the intraclass correlation coefficient (ICC) of two groups based on the central macular thickness (group A, ≤ 450 μm; group B, > 450 μm). A total of 88 patients were analyzed. The average thicknesses of the central macula, RNFL, and GCIPL were 256.5, 96.6, and 84.4 μm, respectively, in the normal fellow eye and 412.3, 94.6, and 56.7 μm in the affected eye. The ICCs of the central macula, RNFL, and GCIPL were 0.995, 0.994, and 0.996, respectively, for the normal fellow eye and 0.991, 0.973, and 0.881 for the affected eye. The average thicknesses of the central macula, RNFL, and GCIPL in group A were 360.9, 93.5, and 63.4 μm, respectively, and the ICCs were 0.997, 0.987, and 0.995. The thicknesses in group B were 489.5, 96.2, and 46.6 μm, respectively, and the ICCs were 0.910, 0.942, and 0.603, significantly lower repeatability compared with group A (P macula.

  18. Electromechanical response of amorphous LaAlO{sub 3} thin film probed by scanning probe microscopies

    Energy Technology Data Exchange (ETDEWEB)

    Borowiak, Alexis S.; Baboux, Nicolas; Albertini, David; Gautier, Brice, E-mail: brice.gautier@insa-lyon.fr [Institut des nanotechnologies de Lyon (INL), Institut National des Sciences Appliquées de Lyon, Université de Lyon, UMR CNRS 5270, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France); Vilquin, Bertrand; Saint Girons, Guillaume; Pelloquin, Sylvain [Institut des nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, Université de Lyon, UMR CNRS 5270, 36 Avenue Guy de Collongues, F-69134 Ecully Cedex (France)

    2014-07-07

    The electromechanical response of a 3 nm thick amorphous LaAlO{sub 3} layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.

  19. Measurements of the Stiffness and Thickness of the Pavement Asphalt Layer Using the Enhanced Resonance Search Method

    Directory of Open Access Journals (Sweden)

    Nur Mustakiza Zakaria

    2014-01-01

    Full Text Available Enhanced resonance search (ERS is a nondestructive testing method that has been created to evaluate the quality of a pavement by means of a special instrument called the pavement integrity scanner (PiScanner. This technique can be used to assess the thickness of the road pavement structure and the profile of shear wave velocity by using the principle of surface wave and body wave propagation. In this study, the ERS technique was used to determine the actual thickness of the asphaltic pavement surface layer, while the shear wave velocities obtained were used to determine its dynamic elastic modulus. A total of fifteen locations were identified and the results were then compared with the specifications of the Malaysian PWD, MDD UKM, and IKRAM. It was found that the value of the elastic modulus of materials is between 3929 MPa and 17726 MPa. A comparison of the average thickness of the samples with the design thickness of MDD UKM showed a difference of 20 to 60%. Thickness of the asphalt surface layer followed the specifications of Malaysian PWD and MDD UKM, while some of the values of stiffness obtained are higher than the standard.

  20. The Imaging and Evolution of Seismic Layer 2A Thickness from a 0-70 Ma Oceanic Crustal Transect in the South Atlantic

    Science.gov (United States)

    Estep, J. D.; Reece, R.; Kardell, D. A.; Christeson, G. L.; Carlson, R. L.

    2017-12-01

    Seismic layer 2A, the uppermost igneous portion of oceanic crust, is commonly used to refer to the seismic velocities of upper crust that are bounded below by a steep vertical velocity gradient. Layer 2A velocities are known to increase with crustal age, from 2.5 km/s in crust 15 Ma. Thickness of layer 2A has been shown to increase by a factor of 2 within 1 Ma at fast spreading ridges and then remain relatively constant, while layer 2A maintains a fairly consistent thickness, irrespective of age, at slow-intermediate spreading ridges. Layer 2A thickness and velocity evolution studies to date have been largely focused on young oceanic crust very proximal to a spreading center with little investigation of changes (or lack thereof) that occur at crustal ages >10 Ma. We utilize a multichannel seismic dataset collected at 30° S in the western South Atlantic that continuously images 0 - 70 Ma oceanic crust along a single flowline generated at the slow-intermediate spreading Mid-Atlantic Ridge. We follow the methods of previous studies by processing the data to image the layer 2A event, which is then used for calculating thickness. 1D travel time forward modeling at regularly spaced age intervals across the transect provides for the conversion of time to depth thickness, and for determining the evolution of velocities with age. Our results show layer 2A in 20 Ma crust is roughly double the thickness of that in crust 0-5 Ma (830 vs. 440 m), but thickness does not appear to change beyond 20 Ma. The layer 2A event is readily observable in crust 0-50 Ma, is nearly completely absent in crust 50-65 Ma, and then reappears with anomalously high amplitude and lateral continuity in crust 65-70 Ma. Our results suggest that layer 2A thickens with age at the slow-intermediate spreading southern Mid-Atlantic Ridge, and that layer 2A either continues to evolve at the older crustal ages, well beyond the expected 10-15 Ma "mature age", or that external factors have altered the crust at

  1. The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków (Poland); Nozaki, Takayuki; Zayets, Vadym; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Suzuki, Yoshishige [National Institute of Advanced Industrial Science and Technology, Spintronics Research Center, Tsukuba, Ibaraki 305-8568 (Japan); Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan)

    2016-08-28

    The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes in the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.

  2. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    NARCIS (Netherlands)

    Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

    2012-01-01

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

  3. Molecular-scale tribology of amorphous carbon coatings: effects of film thickness, adhesion, and long-range interactions.

    Science.gov (United States)

    Gao, G T; Mikulski, Paul T; Harrison, Judith A

    2002-06-19

    Classical molecular dynamics simulations have been conducted to investigate the atomic-scale friction and wear when hydrogen-terminated diamond (111) counterfaces are in sliding contact with diamond (111) surfaces coated with amorphous, hydrogen-free carbon films. Two films, with approximately the same ratio of sp(3)-to-sp(2) carbon, but different thicknesses, have been examined. Both systems give a similar average friction in the load range examined. Above a critical load, a series of tribochemical reactions occur resulting in a significant restructuring of the film. This restructuring is analogous to the "run-in" observed in macroscopic friction experiments and reduces the friction. The contribution of adhesion between the probe (counterface) and the sample to friction was examined by varying the saturation of the counterface. Decreasing the degree of counterface saturation, by reducing the hydrogen termination, increases the friction. Finally, the contribution of long-range interactions to friction was examined by using two potential energy functions that differ only in their long-range forces to examine friction in the same system.

  4. LONGITUDINAL CHANGES IN THICKNESSES OF THE MACULA, GANGLION CELL-INNER PLEXIFORM LAYER, AND RETINAL NERVE FIBER LAYER AFTER VITRECTOMY: A 12-Month Observational Study.

    Science.gov (United States)

    Lim, Hyung-Bin; Lee, Min-Woo; Kwak, Baek-Soo; Jo, Young-Joon; Kim, Jung-Yeul

    2018-01-01

    To analyze longitudinal changes in the thicknesses of the macula, ganglion cell-inner plexiform layer (GC-IPL), and peripapillary retinal nerve fiber layer (RNFL) after vitrectomy. Thirty-eight patients diagnosed with intraocular lens (IOL) dislocation without evidence of other vitreoretinal diseases were included. They underwent conventional vitrectomy and IOL transscleral fixation, with a follow-up of 12 months. Using spectral domain optical coherence tomography, the thicknesses of the macula, GC-IPL, and peripapillary RNFL in the vitrectomized and fellow control eyes were measured. Various optic nerve head parameters were also determined. Optical coherence tomography showed that there were no significant differences in postoperative central macular thickness compared with baseline values. The average GC-IPL thickness increased 1 month after surgery from baseline (P = 0.038). The average RNFL thickness increased from baseline at 1 month (P = 0.001) and 3 months (P = 0.011) after vitrectomy. The mean foveal, GC-IPL, and RNFL thicknesses of the study eyes compared with the fellow control eyes increased at 1 month (P = 0.034), 1 month (P = 0.048), and 1 month (P = 0.013) to 3 months (P = 0.038), respectively, after surgery. However, no significant differences were found in intraocular pressure or optic nerve head parameters between the study and fellow control eyes at 12 months after surgery. Transient increases in the thickness of the macula and GC-IPL were observed at 1 month after vitrectomy, and the postoperative RNFL thickness increased until 3 months after surgery, after which it returned to preoperative levels. There was no significant change in intraocular pressure or optic nerve head parameters before and after surgery.

  5. Detection of charged particles in amorphous silicon layers

    International Nuclear Information System (INIS)

    Kaplan, S.N.; Morel, J.R.; Mulera, T.A.; Perez-Mendez, V.; Schnurmacher, G.; Street, R.A.

    1985-10-01

    The successful development of radiation detectors made from amorphous silicon could offer the possibility for relatively easy construction of large area position-sensitive detectors. We have conducted a series of measurements with prototype detectors, on signals derived from alpha particles. The measurement results are compared with simple model calculations, and projections are made of potential applications in high-energy and nuclear physics. 4 refs., 7 figs

  6. Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers

    International Nuclear Information System (INIS)

    Charnovych, S.; Nemec, P.; Nazabal, V.; Csik, A.; Allix, M.; Matzen, G.; Kokenyesi, S.

    2011-01-01

    Highlights: → Amorphous chalcogenides were investigated in this work. → Photo-induced effects were investigated in the created thin films. → Limiting of photo induced changes in amorphous chalcogenide/alumino-silicate nanomultilayers have been studied. - Abstract: Photo induced changes in amorphous As 20 Se 80 /alumino-silicate nanomultilayers (NML) produced by pulsed laser deposition (PLD) method have been studied in this work. The aim was to investigate the photo induced optical and surface relief changes due to the band gap illumination under the size- and hard cover limited conditions. It was observed that the hard cover layer on the surface of the uniform film or alumino-silicate sub-layers in the NML structure influences the photo darkening and restricts surface relief formations in As 20 Se 80 film or in the related NML compared with this effect in a pure chalcogenide layer. The influence of hard layers is supposed to be connected with limiting the free volume formation at the initial stage of the transformation process, which in turn limits the atomic movement and so the surface relief formation.

  7. Simultaneous sound velocity and thickness measurement by the ultrasonic pitch-catch method for corrosion-layer-forming polymeric materials.

    Science.gov (United States)

    Kusano, Masahiro; Takizawa, Shota; Sakai, Tetsuya; Arao, Yoshihiko; Kubouchi, Masatoshi

    2018-01-01

    Since thermosetting resins have excellent resistance to chemicals, fiber reinforced plastics composed of such resins and reinforcement fibers are widely used as construction materials for equipment in chemical plants. Such equipment is usually used for several decades under severe corrosive conditions so that failure due to degradation may result. One of the degradation behaviors in thermosetting resins under chemical solutions is "corrosion-layer-forming" degradation. In this type of degradation, surface resins in contact with a solution corrode, and some of them remain asa corrosion layer on the pristine part. It is difficult to precisely measure the thickness of the pristine part of such degradation type materials by conventional pulse-echo ultrasonic testing, because the sound velocity depends on the degree of corrosion of the polymeric material. In addition, the ultrasonic reflection interface between the pristine part and the corrosion layer is obscure. Thus, we propose a pitch-catch method using a pair of normal and angle probes to measure four parameters: the thicknesses of the pristine part and the corrosion layer, and their respective sound velocities. The validity of the proposed method was confirmed by measuring a two-layer sample and a sample including corroded parts. The results demonstrate that the pitch-catch method can successfully measure the four parameters and evaluate the residual thickness of the pristine part in the corrosion-layer-forming sample. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

    KAUST Repository

    Wu, Di

    2015-11-17

    © 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

  9. Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001).

    Science.gov (United States)

    Bergamaschini, R; Brehm, M; Grydlik, M; Fromherz, T; Bauer, G; Montalenti, F

    2011-07-15

    The evolution of the wetting layer (WL) thickness during Ge deposition on Si(001) is analyzed with the help of a rate-equation approach. The combined role of thickness, island volume and shape-dependent chemical potentials is considered. Several experimental observations, such as WL thinning following the pyramid-to-dome transformation, are captured by the model, as directly demonstrated by a close comparison with photoluminescence measurements (PL) on samples grown at three different temperatures. The limitations of the model in describing late stages of growth are critically addressed.

  10. Characterization of boundary layer thickness of nano fluid ZrO_2 on natural convection process

    International Nuclear Information System (INIS)

    V-Indriati Sri Wardhani; Henky P Rahardjo

    2015-01-01

    Cooling system is highly influenced by the process of convection heat transfer from the heat source to the cooling fluid. The cooling fluid usually used conventional fluid such as water. Cooling system performance can be improved by using fluids other than water such as nano fluid that is made from a mixture of water and nano-sized particles. Researchers at BATAN Bandung have made nano fluid ZrO_2 from local materials, as well as experimental equipment for studying the thermohydraulic characteristics of nano fluid as the cooling fluid. In this study, thermohydraulic characteristics of nano fluid ZrO_2 are observed through experimentation. Nano fluid ZrO_2 is made from a mixture of water with ZrO_2 nano-sized particles of 10-7-10-9 nm whose concentration is 1 g/liter. This nano fluid is used as coolant in the cooling process of natural convection. The natural convection process depends on the temperature difference between heat source and the cooling fluid, which occur in the thermal boundary layer. Therefore it is necessary to study the thermal boundary layer thickness of nano fluid ZrO_2, which is also able to determine the local velocity. Experimentations are done with several variation of the heater power and then the temperature are measured at several horizontal points to see the distribution of the temperatures. The temperature distribution measurement results can be used to determine the boundary layer thickness and flow rate. It is obtained that thermal boundary layer thickness and velocity of nano fluid ZrO_2 is not much different from the conventional fluid water. (author)

  11. Amorphous Cu-Ag films with high stability

    International Nuclear Information System (INIS)

    Reda, I.M.; Hafner, J.; Pongratz, P.; Wagendristel, A.; Bangert, H.; Bhat, P.K.

    1982-06-01

    Films produced by quenching Cu-Ag vapour onto cooled substrates at liquid nitrogen temperature have been investigated using electron microscopy, electron diffraction and electrical resistivity measurements. In the composition range from 30 to 70 at% Cu the as quenched films are amorphous, and within the range of 35 to 63 at% Cu the amorphous phase is stable above room temperature with a maximum crystallization temperature Tsub(c)=381 K at 47.5 at% Cu. Crystallization results in the formation of a supersaturated fcc solid solution which decomposes in a second crystallization step. The effect of deposition rate, film thickness, temperature and surface of the substrate, and most importantly of the composition on the transition temperatures has been investigated. A comparative study of the formation of amorphous phases in a wide variety of Cu-based alloys is presented. (author)

  12. Macular retinal ganglion cell-inner plexiform layer thickness in patients on hydroxychloroquine therapy.

    Science.gov (United States)

    Lee, Min Gyu; Kim, Sang Jin; Ham, Don-Il; Kang, Se Woong; Kee, Changwon; Lee, Jaejoon; Cha, Hoon-Suk; Koh, Eun-Mi

    2014-11-25

    We evaluated macular ganglion cell-inner plexiform layer (GC-IPL) thickness using spectral-domain optical coherence tomography (SD-OCT) in patients with chronic exposure to hydroxychloroquine (HCQ). This study included 130 subjects, who were divided into three groups: Group 1A, 55 patients with HCQ use ≥5 years; Group 1B, 46 patients with HCQ use 1000 g), significant correlations were not observed. This study revealed that macular GC-IPL thickness did not show definite correlations with HCQ use. However, some patients, especially with HCQ retinopathy or high cumulative doses, showed thin GC-IPL. Copyright 2015 The Association for Research in Vision and Ophthalmology, Inc.

  13. Toward an understanding of surface layer formation, growth, and transformation at the glass-fluid interface

    Science.gov (United States)

    Hopf, J.; Eskelsen, J. R.; Chiu, M.; Ievlev, A. V.; Ovchinnikova, O. S.; Leonard, D.; Pierce, E. M.

    2018-05-01

    Silicate glass is a metastable and durable solid that has application to a number of energy and environmental challenges (e.g., microelectronics, fiber optics, and nuclear waste storage). If allowed to react with water over time silicate glass develops an altered layer at the solid-fluid interface. In this study, we used borosilicate glass (LAWB45) as a model material to develop a robust understanding of altered layer formation (i.e., amorphous hydrated surface layer and crystalline reaction products). Experiments were conducted at high surface area-to-volume ratio (∼200,000 m-1) and 90 °C in the pressurized unsaturated flow (PUF) apparatus for 1.5-years to facilitate the formation of thick altered layers and allow for the effluent solution chemistry to be monitored continuously. A variety of microscopy techniques were used to characterize reacted grains and suggest the average altered layer thickness is 13.2 ± 8.3 μm with the hydrated and clay layer representing 74.8% and 25.2% of the total altered layer, respectively. The estimate of hydrated layer thickness is within the experimental error of the value estimated from the B release rate data (∼10 ± 1 μm/yr) over the 1.5-year duration. PeakForce® quantitative nanomechanical mapping results suggest the hydrated layer has a modulus that ranges between ∼20 and 40 GPa, which is in the range of porous silica that contains from ∼20 to ∼50% porosity, yet significantly lower than dense silica (∼70-80 GPa). Scanning transmission electron microscopy (STEM) images confirm the presence of pores and an analysis of a higher resolution image provides a qualitative estimate of ≥22% porosity in the hydrated layer with variations in void volume with increasing distance from the unaltered glass. Chemical composition analyses, based on a combination of time-of-flight secondary-ion mass spectrometry (ToF-SIMS), scanning electron microscopy with X-ray energy dispersive spectroscopy (EDS), and STEM-EDS, clearly show

  14. Optimization of electrode geometry and piezoelectric layer thickness of a deformable mirror

    Directory of Open Access Journals (Sweden)

    Nováková Kateřina

    2013-05-01

    Full Text Available Deformable mirrors are the most commonly used wavefront correctors in adaptive optics systems. Nowadays, many applications of adaptive optics to astronomical telescopes, high power laser systems, and similar fast response optical devices require large diameter deformable mirrors with a fast response time and high actuator stroke. In order to satisfy such requirements, deformable mirrors based on piezoelectric layer composite structures have become a subject of intense scientific research during last two decades. In this paper, we present an optimization of several geometric parameters of a deformable mirror that consists of a nickel reflective layer deposited on top of a thin lead zirconate titanate (PZT piezoelectric disk. Honeycomb structure of gold electrodes is deposited on the bottom of the PZT layer. The analysis of the optimal thickness ratio between the PZT and nickel layers is performed to get the maximum actuator stroke using the finite element method. The effect of inter-electrode distance on the actuator stroke and influence function is investigated. Applicability and manufacturing issues are discussed.

  15. Measurement of Young’s modulus and residual stress of atomic layer deposited Al2O3 and Pt thin films

    Science.gov (United States)

    Purkl, Fabian; Daus, Alwin; English, Timothy S.; Provine, J.; Feyh, Ando; Urban, Gerald; Kenny, Thomas W.

    2017-08-01

    The accurate measurement of mechanical properties of thin films is required for the design of reliable nano/micro-electromechanical devices but is increasingly challenging for thicknesses approaching a few nanometers. We apply a combination of resonant and static mechanical test structures to measure elastic constants and residual stresses of 8-27 nm thick Al2O3 and Pt layers which have been fabricated through atomic layer deposition. Young’s modulus of poly-crystalline Pt films was found to be reduced by less than 15% compared to the bulk value, whereas for amorphous Al2O3 it was reduced to about half of its bulk value. We observed no discernible dependence of the elastic constant on thickness or deposition method for Pt, but the use of plasma-enhanced atomic layer deposition was found to increase Young’s modulus of Al2O3 by 10% compared to a thermal atomic layer deposition. As deposited, the Al2O3 layers had an average tensile residual stress of 131 MPa. The stress was found to be higher for thinner layers and layers deposited without the help of a remote plasma. No residual stress values could be extracted for Pt due to insufficient adhesion of the film without an underlying layer to promote nucleation.

  16. Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

    Science.gov (United States)

    Zubiaga, A.; García, J. A.; Plazaola, F.; Tuomisto, F.; Zúñiga-Pérez, J.; Muñoz-Sanjosé, V.

    2007-05-01

    We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W/S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.

  17. Atomistic modeling of defect evolution in Si for amorphizing and subamorphizing implants

    International Nuclear Information System (INIS)

    Lopez, Pedro; Pelaz, Lourdes; Marques, Luis A.; Santos, Ivan; Aboy, Maria; Barbolla, Juan

    2004-01-01

    Solid phase epitaxial regrowth of pre-amorphizing implants has received significant attention as a method to achieve high dopant activation with minimal diffusion at low implant temperatures and suppress channelling. Therefore, a good understanding of the amorphization and regrowth mechanisms is required in process simulators. We present an atomistic amorphization and recrystallization model that uses the interstitial-vacancy (I-V) pair as a building block to describe the amorphous phase. I-V pairs are locally characterized by the number of neighbouring I-V pairs. This feature captures the damage generation and the dynamical annealing during ion implantation, and also explains the annealing behaviour of amorphous layers and amorphous pockets

  18. Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1−xKxFe2As2 superconductors

    KAUST Repository

    Wang, Lei; Ma, Yanwei; Wang, Qingxiao; Li, Kun; Zhang, Xixiang; Qi, Yanpeng; Gao, Zhaoshun; Zhang, Xianping; Wang, Dongliang; Yao, Chao; Wang, Chunlei

    2011-01-01

    We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystallineSr0.6K0.4Fe2As2superconductor. A large fraction of grain boundaries contain amorphous layers larger than the coherence length, while

  19. Amorphous silicon passivation for 23.3% laser processed back contact solar cells

    Science.gov (United States)

    Carstens, Kai; Dahlinger, Morris; Hoffmann, Erik; Zapf-Gottwick, Renate; Werner, Jürgen H.

    2017-08-01

    This paper presents amorphous silicon deposited at temperatures below 200 °C, leading to an excellent passivation layer for boron doped emitter and phosphorus doped back surface field areas in interdigitated back contact solar cells. A higher deposition temperature degrades the passivation of the boron emitter by an increased hydrogen effusion due to lower silicon hydrogen bond energy, proved by hydrogen effusion measurements. The high boron surface doping in crystalline silicon causes a band bending in the amorphous silicon. Under these conditions, at the interface, the intentionally undoped amorphous silicon becomes p-type conducting, with the consequence of an increased dangling bond defect density. For bulk amorphous silicon this effect is described by the defect pool model. We demonstrate, that the defect pool model is also applicable to the interface between amorphous and crystalline silicon. Our simulation shows the shift of the Fermi energy towards the valence band edge to be more pronounced for high temperature deposited amorphous silicon having a small bandgap. Application of optimized amorphous silicon as passivation layer for the boron doped emitter and phosphorus doped back surface field on the rear side of laser processed back contact solar cells, fabricated using four laser processing steps, yields an efficiency of 23.3%.

  20. Effect of double layer thickness on magnetoelectric coupling in multiferroic BaTiO3-Bi0.95Gd0.05FeO3 multilayers

    Science.gov (United States)

    Hohenberger, S.; Lazenka, V.; Temst, K.; Selle, S.; Patzig, C.; Höche, T.; Grundmann, M.; Lorenz, M.

    2018-05-01

    The effect of double-layer thickness and partial substitution of Bi3+ by Gd3+ is demonstrated for multiferroic BaTiO3–BiFeO3 2–2 heterostructures. Multilayers of 15 double layers of BaTiO3 and Bi0.95Gd0.05FeO3 were deposited onto (0 0 1) oriented SrTiO3 substrates by pulsed laser deposition with various double layer thicknesses. X-ray diffraction and high resolution transmission electron microscopy investigations revealed a systematic strain tuning with layer thickness via coherently strained interfaces. The multilayers show increasingly enhanced magnetoelectric coupling with reduced double layer thickness. The maximum magnetoelectric coupling coefficient was measured to be as high as 50.8 V cm‑1 Oe‑1 in 0 T DC bias magnetic field at room temperature, and 54.9 V cm‑1 Oe‑1 above 3 T for the sample with the thinnest double layer thickness of 22.5 nm. This enhancement is accompanied by progressively increasing perpendicular magnetic anisotropy and compressive out-of-plane strain. To understand the origin of the enhanced magnetoelectric coupling in such multilayers, the temperature and magnetic field dependency of is discussed. The magnetoelectric performance of the Gd3+ substituted samples is found to be slightly enhanced when compared to unsubstituted BaTiO3–BiFeO3 multilayers of comparable double-layer thickness.

  1. Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

    Science.gov (United States)

    Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

    2017-11-01

    Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

  2. Changes in retinal nerve fiber layer thickness after spinal surgery in the prone position: a prospective study

    Directory of Open Access Journals (Sweden)

    Baran Gencer

    2015-02-01

    Full Text Available BACKGROUND AND OBJECTIVES: Changes in ocular perfusion play an important role in the pathogenesis of ischemic optic neuropathy. Ocular perfusion pressure is equal to mean arterial pressure minus intraocular pressure. The aim of this study was to evaluate the changes in the intraocular pressure and the retinal nerve fiber layer thickness in patients undergoing spinal surgery in the prone position. METHODS: This prospective study included 30 patients undergoing spinal surgery. Retinal nerve fiber layer thickness were measured one day before and after the surgery by using optical coherence tomography. Intraocular pressure was measured by tonopen six times at different position and time-duration: supine position (baseline; 10 min after intubation (Supine 1; 10 (Prone 1, 60 (Prone 2, 120 (Prone 3 min after prone position; and just after postoperative supine position (Supine 2. RESULTS: Our study involved 10 male and 20 female patients with the median age of 57 years. When postoperative retinal nerve fiber layer thickness measurements were compared with preoperative values, a statistically significant thinning was observed in inferior and nasal quadrants (p = 0.009 and p = 0.003, respectively. We observed a statistically significant intraocular pressure decrease in Supine 1 and an increase in both Prone 2 and Prone 3 when compared to the baseline. Mean arterial pressure and ocular perfusion pressure were found to be significantly lower in Prone 1, Prone 2 and Prone 3, when compared with the baseline. CONCLUSIONS: Our study has shown increase in intraocular pressure during spinal surgery in prone position. A statistically significant retinal nerve fiber layer thickness thinning was seen in inferior and nasal quadrants one day after the spinal surgery.

  3. Non-destructive lateral mapping of the thickness of the photoactive layer in polymer-based solar cells

    DEFF Research Database (Denmark)

    Sylvester-Hvid, Kristian O.; Tromholt, Thomas; Jørgensen, Mikkel

    2013-01-01

    Non-destructive lateral mapping of the thickness of the photoactive layer in poly(3-hexyl-thiophene) : 1-(3-methoxy-carbonyl)propyl-1-phenyl-(6,6)C61 (P3HT : PCBM) solar cells is demonstrated. The method employs a spatially resolved (XY) recording of ultraviolet-visible spectra in reflection...... geometry at normal incidence, using a dense raster defined by a circular probe spot of 800-µm diameter. The evaluation of the thickness of the photoactive layer at each raster point employs an algorithm-driven comparison of the measured absorption spectrum with spectral features, as compiled from......-coated float glass substrates. After this, two application examples for solar cells processed either by spin coating or slot die coating of the P3HT : PCBM layer follow. The spin-coated solar cells have glass as the substrate with the P3HT : PCBM spun at different spinning speeds. The slot die-coated solar...

  4. Macular and peripapillary retinal nerve fiber layer thickness in children with hyperopic anisometropic amblyopia

    Directory of Open Access Journals (Sweden)

    Shuang-Qing Wu

    2013-02-01

    Full Text Available AIM:To compare the retinal nerve fiber layer (RNFL thickness and macular thickness in the amblyopic eye with that in the sound eye of children with hyperopic anisometropic amblyopia using optical coherence tomography (OCT.METHODS: A prospective, nonrandom, intraindividual comparative cohort study includes 72 children with hyperopic anisometropic amblyopia in a single center. Macular thickness, macular foveola thickness, and peripapillary RNFL thickness were compared between the amblyopia eyes and the contralateral sound eyes.RESULTS:There were 38 male and 34 female patients, with a mean age as 9.7±1.9 years (range, 5–16 years. Hyperopic was +3.62±1.16D (range +2.00D to +6.50D in the amblyopic eyes, which was significantly higher in the control eyes with +0.76±0.90D (range 0D to +2.00D (P P = 0.02. The mean macular foveola thickness was significantly thicker in the amblyopic eyes than the contralateral sound eyes (181.4±14.2µm vs 175.2±13.3µm, P CONCLUSION:Eyes with hyperopic anisometropic amblyopia are found thicker macular foveola and peripapillary RNFL than the contralateral eyes in children.

  5. FY1995 study of high density near-contact magnetic recording using spin valve head; 1995 nendo spin valve head ni yoru chokomitsudo near contact jiki kiroku no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    Development of high performance spin valves formed by amorphous magnetic layer and head-medium interface with nano-thickness molecular film for realizing an ultra-high density of 20 Gbit/in{sup 2} using contact recording. The giant magnetoresistance effect was investigated for spin valves using very thin amorphous magnetic layer. In amorphous-CoFeB/Cu/ Co spin valves, the maximum MR ratio of 6% was achieved at the thickness of the amorphous layer of 2 nm. The spin valves with the amorphous layer exhibit very good thermal stability. Design guideline for molecularly thin lubricant was established using newly derived lubrication equation considering lubricant porosity. Novel method for accurately measuring surface force due to molecularly thin lubricant was developed by using Michelson interferometry to detect cantilever displacement, which enabled two-dimensional transient force measurement. (NEDO)

  6. Development of practical application technology for photovoltaic power generation systems in fiscal 1997. Development of technologies to manufacture application type thin film solar cells with new structure (development of technologies to manufacture amorphous silicon and thin film poly-crystal silicon hybrid thin film solar cells); 1997 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu. Usumaku taiyo denchi no seizo gijutsu kaihatsu, oyogata shinkozo usumaku taiyo denchi no seizo gijutsu kaihatsu (amorphous silicon/usumaku takessho silicon hybrid usumaku taiyo denchi no seizo gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1998-03-01

    Research and development was performed with an objective to manufacture amorphous silicon and thin film poly-crystal silicon hybrid solar cells with large area and at low cost, being a high-efficiency next generation solar cell. The research was performed based on a principle that low-cost substrates shall be used, that a manufacturing process capable of forming amorphous silicon films with large area shall be based on, and that silicon film with as thin as possible thickness shall be used. Fiscal 1997 has started research and development on making the cells hybrid with amorphous silicon cells. As a result of the research and development, such achievements have been attained as using texture structure on the rear layer in thin poly-crystal silicon film solar cells with a thickness of two microns, and having achieved conversion efficiency of 10.1% by optimizing the junction interface forming conditions. A photo-deterioration test was carried out on hybrid cells which combine the thin poly-crystal silicon film cells having STAR structure with the amorphous silicon cells. Stabilization efficiency of 11.5% was attained after light has been irradiated for 500 hours or longer. (NEDO)

  7. Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

    International Nuclear Information System (INIS)

    Drera, G.; Mozzati, M.C.; Colombi, P.; Salvinelli, G.; Pagliara, S.; Visentin, D.; Sangaletti, L.

    2015-01-01

    Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al 2 O 3 substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al 2 O 3 substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions

  8. Amorphous Si layers co-doped with B and Mn: Thin film growth and steering of magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Drera, G. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Mozzati, M.C. [CNISM, Dipartimento di Fisica, Università di Pavia, Via Bassi 6, 27100 Pavia (Italy); Colombi, P. [CSMT Gestione s.c.a.r.l, Via Branze 45, 25123 Brescia (Italy); Salvinelli, G.; Pagliara, S.; Visentin, D. [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy); Sangaletti, L., E-mail: sangalet@dmf.unicatt.it [I-LAMP, Dipartimento di Matematica e Fisica, Università Cattolica del Sacro Cuore, Via dei Musei 41, 25121 Brescia (Italy)

    2015-09-01

    Amorphous silicon thin films co-doped with manganese (5% at.) and boron (1.8% at.) have been prepared by RF sputtering on Al{sub 2}O{sub 3} substrates held at room temperature (RT). The films, with an average thickness of about 0.9 μm, were carefully characterized by micro-Raman and X-ray photoemission spectroscopies. A ferromagnetic (FM) behavior up to RT was observed. In order to discuss and possibly rule out extrinsic effects usually related to segregations of ferromagnetic impurities in the samples, magnetization measurements were carried out on the Al{sub 2}O{sub 3} substrates, as well as on Si:B and Si:Mn films grown with the same RF sputtering system. Only the Si:B:Mn films displayed a FM behavior up to RT. Since amorphous films doped with Mn alone did not display any signature of FM ordering, boron co-doping results to be crucial for the onset of the FM behavior. The conductivity of the samples is not affected by boron doping that, therefore, does not appear to significantly contribute to a possible carrier-mediated FM interaction between Mn ions by supplying extra charges to the system. On this basis, the capability of B to hinder the quenching of the Mn 3d magnetic moments has also to be regarded as a possible role of this co-dopant in the observed magnetization. - Highlights: • We successfully deposited amorphous silicon thin films co-doped with Mn and B. • Structural, electronic, and magnetic properties have been carefully characterized. • A ferromagnetic behavior up to room temperature was detected. • The extrinsic origin of magnetism is excluded. • Boron can play a relevant role to avoid quenching of magnetic moment in Mn ions.

  9. Investigation of radiative effects of the optically thick dust layer over the Indian tropical region

    Directory of Open Access Journals (Sweden)

    S. K. Das

    2013-04-01

    Full Text Available Optical and physical properties of aerosols derived from multi-satellite observations (MODIS-Aqua, OMI-Aura, MISR-Terra, CALIOP-CALIPSO have been used to estimate radiative effects of the dust layer over southern India. The vertical distribution of aerosol radiative forcing and heating rates are calculated with 100 m resolution in the lower atmosphere, using temperature and relative humidity data from balloon-borne radiosonde observations. The present study investigates the optically thick dust layer of optical thickness 0.18 ± 0.06 at an altitude of 2.5 ± 0.7 km over Gadanki, transported from the Thar Desert, producing radiative forcing and heating rate of 11.5 ± 3.3 W m−2 and 0.6 ± 0.26 K day−1, respectively, with a forcing efficiency of 43 W m−2 and an effective heating rate of 4 K day−1 per unit dust optical depth. Presence of the dust layer increases radiative forcing by 60% and heating rate by 60 times at that altitude compared to non-dusty cloud-free days. Calculation shows that the radiative effects of the dust layer strongly depend on the boundary layer aerosol type and mass loading. An increase of 25% of heating by the dust layer is found over relatively cleaner regions than urban regions in southern India and further 15% of heating increases over the marine region. Such heating differences in free troposphere may have significant consequences in the atmospheric circulation and hydrological cycle over the tropical Indian region.

  10. Amorphous GaP produced by ion implantation

    International Nuclear Information System (INIS)

    Shimada, T.; Kato, Y.; Shiraki, Y.; Komatsubara, K.F.

    1976-01-01

    Two types of non-crystalline states ('disordered' and 'amorphous') of GaP were produced by using ion implantation and post annealing. A structural-phase-transition-like annealing behaviour from the 'disordered' state to the 'amorphous' state was observed. The ion dose dependence and the annealing behaviour of the atomic structure of GaP implanted with 200 keV -N + ions were studied by using electron diffraction, backscattering and volume change measurements. The electronic structure was also investigated by measuring optical absorption and electrical conductivity. The implanted layer gradually loses the crystalline order with the increase of the nitrogen dose. The optical absorption coefficient α and electric conductivity sigma of GaP crystals implanted with 200 keV -N + ions of 1 x 10 16 cm -2 were expressed as αhν = C(hν - E 0 )sup(n) and log sigma = A -BTsup(-1/4), respectively. Moreover, the volume of the implanted layer increased about three percent and the electron diffraction pattern was diffused halo whose intensity monotonically decreases along the radial direction. These results indicate that the as-implanted layer has neither a long range order or short range order ('disordered state'). In the sample implanted at 1 x 10 16 cm -2 , a structural phase-transition-like annealing stage was observed at around 400 0 C. That is, the optical absorption coefficient abruptly fell off from 6 x 10 4 to 7 x 10 3 cm -1 and the volume of the implanted layer decreased about 2% within an increase of less than 10 degrees in the anneal temperature. Moreover, the short range order of the lattice structure appeared in the electron diffraction pattern. According to the backscattering experiment, the heavily implanted GaP was still in the non-crystalline state even after annealing. These facts suggest that heavily implanted GaP, followed by annealing at around 400 0 C, is in the 'amorphous' state, although as-implanted GaP is not in the 'amorphous' state but in the

  11. Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Akhilesh Kumar [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Hsu, Jen-Hwa [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2016-11-15

    We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]{sub 2}/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T{sub A}=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T{sub A}≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T{sub A}=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T{sub A} and temperature. A large reduction in coercivity (H{sub C}) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H{sub C}(T), i.e., a broad minimum in H{sub C}(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H{sub C}(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T{sub C}) with T{sub A} (x). The multilayer films annealed at 200 °C exhibit low value of T{sub C} with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T{sub C} with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and

  12. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  13. Effect of layer thickness and printing orientation on mechanical properties and dimensional accuracy of 3D printed porous samples for bone tissue engineering.

    Directory of Open Access Journals (Sweden)

    Arghavan Farzadi

    Full Text Available Powder-based inkjet 3D printing method is one of the most attractive solid free form techniques. It involves a sequential layering process through which 3D porous scaffolds can be directly produced from computer-generated models. 3D printed products' quality are controlled by the optimal build parameters. In this study, Calcium Sulfate based powders were used for porous scaffolds fabrication. The printed scaffolds of 0.8 mm pore size, with different layer thickness and printing orientation, were subjected to the depowdering step. The effects of four layer thicknesses and printing orientations, (parallel to X, Y and Z, on the physical and mechanical properties of printed scaffolds were investigated. It was observed that the compressive strength, toughness and Young's modulus of samples with 0.1125 and 0.125 mm layer thickness were more than others. Furthermore, the results of SEM and μCT analyses showed that samples with 0.1125 mm layer thickness printed in X direction have more dimensional accuracy and significantly close to CAD software based designs with predefined pore size, porosity and pore interconnectivity.

  14. Optical properties of self assembled oriented island evolution of ultra-thin gold layers

    International Nuclear Information System (INIS)

    Worsch, Christian; Kracker, Michael; Wisniewski, Wolfgang; Rüssel, Christian

    2012-01-01

    Gold layers with a thickness of only 8 to 21 nm were sputtered on soda–lime–silica glasses. Subsequent annealing at 300 and 400 °C for 1 and 24 h resulted in the formation of separated round gold particles with diameters from 8 to 200 nm. Crystal orientations were described using X-ray diffraction and electron backscatter diffraction. The gold particles are oriented with their (111) planes perpendicular to the surface. Most gold nano particles are single crystalline, some particles are twinned. Thermal annealing of sputtered gold layers resulted in purple samples with a coloration comparable to that of gold ruby glasses. The color can be controlled by the thickness of the sputtered gold layer and the annealing conditions. The simple method of gold film preparation and the annealing temperature dependent properties of the layers make them appropriate for practical applications. - Highlights: ► We produce gold nano particle layers on amorphous substrates. ► Thin sputtered gold layers were annealed at low temperatures. ► Various colors can be achieved reproducibly and UV–vis-NIR spectra are reported. ► A 111-texture of the particles is described as well as twinning. ► The process is suitable for mass production.

  15. Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

    International Nuclear Information System (INIS)

    Pantzas, Konstantinos; Patriarche, Gilles; Talneau, Anne; Youssef, Jamal Ben

    2014-01-01

    Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO 2 /amorphous-YIG bilayer is formed and welds the garnet to silicon.

  16. Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Kim, Kyung Joong; Lee, Seung Mi; Jang, Jong Shik; Moret, Mona

    2012-02-01

    The general equation Tove = L cos θ ln(Rexp/R0 + 1) for the thickness measurement of thin oxide films by X-ray photoelectron spectroscopy (XPS) was applied to a HfO2/SiO2/Si(1 0 0) as a thin hetero-oxide film system with an interfacial oxide layer. The contribution of the thick interfacial SiO2 layer to the thickness of the HfO2 overlayer was counterbalanced by multiplying the ratio between the intensity of Si4+ from a thick SiO2 film and that of Si0 from a Si(1 0 0) substrate to the intensity of Si4+ from the HfO2/SiO2/Si(1 0 0) film. With this approximation, the thickness levels of the HfO2 overlayers showed a small standard deviation of 0.03 nm in a series of HfO2 (2 nm)/SiO2 (2-6 nm)/Si(1 0 0) films. Mutual calibration with XPS and transmission electron microscopy (TEM) was used to verify the thickness of HfO2 overlayers in a series of HfO2 (1-4 nm)/SiO2 (3 nm)/Si(1 0 0) films. From the linear relation between the thickness values derived from XPS and TEM, the effective attenuation length of the photoelectrons and the thickness of the HfO2 overlayer could be determined.

  17. Investigations of metal contacts to amorphous evaporated Ge films and amorphous sputtered Si films

    International Nuclear Information System (INIS)

    Hafiz, M.; Mgbenu, E.; Tove, P.A.; Norde, H.; Petersson, S.

    1976-02-01

    Amorphous Ge or Si films have been used as ohmic contacts to high-resistivity n-silicon radiation detectors. One interesting property of this contact is that it does not inject minority carriers even when the depletion region extends up to the contact thus generating an extracting field there. The function of this contact is not yet fully explored. One part problem is the role of the metal films used as external contacts to the amorphous film. In this report the function of different contacting metals, such as Au, Al, Cr are investigated by measuring the I-V-characteristics of sandwich structures with two metals on both sides of the amorphous evaporated (Ge) and sputtered (Si) film (of typical thickness 1000 A). It was found that while the symmetric structures Au-αGe-Au and Cr-αGe-Cr were low-resistive (leading to resistivity values of approximately 10 5 Ωcm for the αGe film), Al-αGe-Al structures showed much higher resistance and were also polarity dependent. The former feature was found also for unsymmetric structures, i.e. Cr-αGe-Au, Cr-αGe-Al. (Auth.)

  18. Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Alonso, J.L. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)], E-mail: j.l.alonso@umh.es; Ferrer, J.C. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain); Cotarelo, M.A.; Montilla, F. [Dpto. de Quimica Fisica e Instituto Universitario de Materiales de Alicante, Apdo. de Correos 99, E-03080, Alicante (Spain); Fernandez de Avila, S. [Dpto. de Fisica y Arquitectura de Computadores, Universidad Miguel Hernandez, Av. de la Universidad s/n, Ed. Torrepinet, 03202, Elche, Alicante (Spain)

    2009-02-27

    An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode.

  19. Influence of the thickness of electrochemically deposited polyaniline used as hole transporting layer on the behaviour of polymer light-emitting diodes

    International Nuclear Information System (INIS)

    Alonso, J.L.; Ferrer, J.C.; Cotarelo, M.A.; Montilla, F.; Fernandez de Avila, S.

    2009-01-01

    An experimental study about the influence of the thickness of electrochemically deposited polyaniline (PANI), used as hole-transporting layer, on the behaviour of polymer light emitting diodes is presented. Two sets of devices with a different conjugated polymer used as active layer were prepared. Poly(9-vinylcarbazole) was used for the first type of devices, whereas Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] was used for the second type. Each set consists of five polymeric diodes in which the hole-transporting layer has been varied. In one case of each set no layer was deposited, in other one a Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) layer was deposited, and in the rest of the diodes a different thickness of electrochemically deposited PANI was employed. The optic and electronic characterization of the devices show that controlling the thickness of the PANI hole transporting layer, both the maximum emission peak of the electroluminescence curves and the driving voltage could be tuned. Furthermore, an exponential behaviour has been demonstrated for the maximum intensity of the electroluminescence curves as a function of the applied excitation voltage between anode and cathode

  20. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Adib Abou Chaaya

    2013-10-01

    Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

  1. Electron tomography, three-dimensional Fourier analysis and colour prediction of a three-dimensional amorphous biophotonic nanostructure

    Science.gov (United States)

    Shawkey, Matthew D.; Saranathan, Vinodkumar; Pálsdóttir, Hildur; Crum, John; Ellisman, Mark H.; Auer, Manfred; Prum, Richard O.

    2009-01-01

    Organismal colour can be created by selective absorption of light by pigments or light scattering by photonic nanostructures. Photonic nanostructures may vary in refractive index over one, two or three dimensions and may be periodic over large spatial scales or amorphous with short-range order. Theoretical optical analysis of three-dimensional amorphous nanostructures has been challenging because these structures are difficult to describe accurately from conventional two-dimensional electron microscopy alone. Intermediate voltage electron microscopy (IVEM) with tomographic reconstruction adds three-dimensional data by using a high-power electron beam to penetrate and image sections of material sufficiently thick to contain a significant portion of the structure. Here, we use IVEM tomography to characterize a non-iridescent, three-dimensional biophotonic nanostructure: the spongy medullary layer from eastern bluebird Sialia sialis feather barbs. Tomography and three-dimensional Fourier analysis reveal that it is an amorphous, interconnected bicontinuous matrix that is appropriately ordered at local spatial scales in all three dimensions to coherently scatter light. The predicted reflectance spectra from the three-dimensional Fourier analysis are more precise than those predicted by previous two-dimensional Fourier analysis of transmission electron microscopy sections. These results highlight the usefulness, and obstacles, of tomography in the description and analysis of three-dimensional photonic structures. PMID:19158016

  2. Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium–gallium–zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Chang, Geng-Wei; Chang, Ting-Chang; Syu, Yong-En; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tu, Chun-Hao; Jian, Fu-Yen; Hung, Ya-Chi; Tai, Ya-Hsiang

    2011-01-01

    In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium–gallium–zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol–gel process in the atmosphere. The high yield and low cost passivation layer of sol–gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

  3. Ambient Layer-by-Layer ZnO Assembly for Highly Efficient Polymer Bulk Heterojunction Solar Cells

    KAUST Repository

    Eita, Mohamed Samir

    2015-02-04

    The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in fl exible devices. Here, a layer-by-layer (LbL) protocol is reported as a facile, room-temperature, solution-processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of H25 nm yields solar cell power-conversion effi ciencies (PCEs) of ≈6%, exceeding the effi ciency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60-300 ° C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL-deposited fi lms to solar cell performance. This protocol suggests a new fabrication method for solution-processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to fl exible devices printed on plastic substrates.

  4. Evaluation of retinal nerve fiber layer thickness and choroidal thickness in pseudoexfoliative glaucoma and pseudoexfoliative syndrome.

    Science.gov (United States)

    Ozge, Gokhan; Koylu, Mehmet Talay; Mumcuoglu, Tarkan; Gundogan, Fatih Cakir; Ozgonul, Cem; Ayyildiz, Onder; Kucukevcilioglu, Murat

    2016-05-01

    To compare retinal nerve fiber layer thickness (RNFLT) and choroidal thickness (ChT) measurements in eyes with pseudoexfoliative (PEX) glaucoma, PEX syndrome and healthy control eyes. Eighteen patients with PEX glaucoma in one eye and PEX syndrome in the fellow eye were included. The right eyes of thirty-nine age- and sex-matched healthy subjects were included as control group. All participants underwent a detailed biomicroscopic and funduscopic examination. RNFLT and ChT measurements were performed with a commercially available spectral-domain optical coherence tomography (SD-OCT). ChT measurements were performed by using enhanced depth imaging (EDI) mode. Patients with PEX underwent diurnal IOP measurements with 4-hour intervals before inclusion in the study. RNFLT results included the average measurement and 6 quadrants (temporal, inferotemporal, inferonasal, nasal, superonasal and supero-temporal). ChT measurements were performed in the subfoveal region and around the fovea (500µm and 1500 µm nasal and temporal to the fovea), as well as around the optic disc (average peripapillary and eight quadrants in the peripapillary region (temporal, inferotemporal, inferior, inferonasal, nasal, superonasal, superior, supero-temporal)). RNFLT in all quadrants and average thickness were significantly lower in PEX glaucoma eyes compared to PEX syndrome eyes and healthy control eyes (p0.05) except the inferotemporal quadrant. ChT measurements were similar between groups (p>0.05). Thinning of the RNFL in association with unchanged ChT may mean that the presence of PEX material is a much more significant risk factor than choroidal changes in the progression of PEX syndrome to PEX glaucoma.

  5. Infrared Spectra and Band Strengths of Amorphous and Crystalline N2O

    Science.gov (United States)

    Hudson, R. L.; Loeffler, M. J.; Gerakines, P. A.

    2017-01-01

    Infrared transmission spectra from 4000 to 400 cm (exp -1), and associated band strengths and absorption coefficients, are presented for the first time for both amorphous and crystalline N2O. Changes in the spectra as a function of ice thickness and ice temperature are shown. New measurements of density, refractive index, and specific refraction are reported for amorphous and crystalline N2O. Comparisons are made to published results, and the most-likely reason for some recent disagreements in the literature is discussed. As with CO2, its isoelectronic congener, the formation of amorphous N2O is found to require greater care than the formation of amorphous solids from more-polar molecules.

  6. Study of first electronic transition and hydrogen bonding state of ultra-thin water layer of nanometer thickness on an α-alumina surface by far-ultraviolet spectroscopy

    Science.gov (United States)

    Goto, Takeyoshi; Kinugasa, Tomoya

    2018-05-01

    The first electronic transition (A˜ ← X˜) and the hydrogen bonding state of an ultra-thin water layer of nanometer thickness between two α-alumina surfaces (0.5-20 nm) were studied using far-ultraviolet (FUV) spectroscopy in the wavelength range 140-180 nm. The ultra-thin water layer of nanometer thickness was prepared by squeezing a water droplet ( 1 μL) between a highly polished α-alumina prism and an α-alumina plate using a high pressure clamp ( 4.7 MPa), and the FUV spectra of the water layer at different thicknesses were measured using the attenuated total reflection method. As the water layer became thinner, the A˜ ← X˜ bands were gradually shifted to higher or lower energy relative to that of bulk water; at thicknesses smaller than 4 nm, these shifts were substantial (0.1-0.2 eV) in either case. The FUV spectra of the water layer with thickness lost at thicknesses below 4 nm, because of steric hydration forces between the α-alumina surfaces.

  7. Determination of the thickness distribution of a graphene layer grown on a 2″ SiC wafer by means of Auger electron spectroscopy depth profiling

    International Nuclear Information System (INIS)

    Kotis, L.; Gurban, S.; Pecz, B.; Menyhard, M.; Yakimova, R.

    2014-01-01

    Highlights: • The thickness of graphene grown on SiC was determined by AES depth profiling. • The AES depth profiling verified the presence of buffer layer on SiC. • The presence of unsaturated Si bonds in the buffer layer has been shown. • Using multipoint analysis thickness distribution of the graphene on the wafer was determined. - Abstract: Auger electron spectroscopy (AES) depth profiling was applied for determination of the thickness of a macroscopic size graphene sheet grown on 2 in. 6H-SiC (0 0 0 1) by sublimation epitaxy. The measured depth profile deviated from the expected exponential form showing the presence of an additional, buffer layer. The measured depth profile was compared to the simulated one which allowed the derivation of the thicknesses of the graphene and buffer layers and the Si concentration of buffer layer. It has been shown that the graphene-like buffer layer contains about 30% unsaturated Si. The depth profiling was carried out in several points (diameter 50 μm), which permitted the constructing of a thickness distribution characterizing the uniformity of the graphene sheet

  8. Interface feature characterization and Schottky interfacial layer confirmation of TiO{sub 2} nanotube array film

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongchao [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Chongyi Zhangyuan Tungsten Industry Corporation Limited, 341300 Ganzhou (China); Tang, Ningxin; Yang, Hongzhi; Leng, Xian [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China); Zou, Jianpeng, E-mail: zoujp@csu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, 410083 Changsha (China)

    2015-11-15

    Highlights: • Interfacial fusion of TiO{sub 2} nanotube film increases with annealing temperature. • Interface bonding force of the film increases with annealing temperature. • We report the forth stage of nanofibers formation in the growing mechanism. • TiO{sub 2} nanotubes grow from Schottky interface layer rather than from Ti substrate. • Schottky interface layer's thickness of 35–45 nm is half the diameter of nanotube. - Abstract: We report here characterization of the interfacial microstructure and properties of titanium dioxide (TiO{sub 2}) nanotube array films fabricated by anodization. Field effect scanning electron microscopy (FESEM), X-ray diffraction (XRD), nanoindentation, atomic force microscopy (AFM), selected area electron diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the interface of the film. With increasing annealing temperature from 200 °C to 800 °C, the interfacial fusion between the film and the Ti substrate increased. The phase transformation of the TiO{sub 2} nanotube film from amorphous to anatase to rutile took place gradually; as the phase transformation progressed, the force needed to break the film increased. The growth of TiO{sub 2} nanotube arrays occurs in four stages: barrier layer formation, penetrating micropore formation, regular nanotube formation, and nanofiber formation. The TiO{sub 2} nanotubes grow from the Schottky interface layer rather than from the Ti substrate. The Schottky interface layer's thickness of 35–45 nm was identified as half the diameter of the corresponding nanotube, which shows good agreement to the Schottky interface layer growth model. The TiO{sub 2} nanotube film was amorphous and the Ti substrate was highly crystallized with many dislocation walls.

  9. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  10. Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

    International Nuclear Information System (INIS)

    Gieraltowska, S.; Wachnicki, L.; Witkowski, B.S.; Godlewski, M.; Guziewicz, E.

    2012-01-01

    In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO 2 and aluminum oxide, Al 2 O 3 ) and zinc oxide (ZnO) layer grown at low temperature (60 °C–100 °C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al 2 O 3 /HfO 2 /Al 2 O 3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO 2 and Al 2 O 3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating.

  11. Gelatin Nano-coating for Inhibiting Surface Crystallization of Amorphous Drugs.

    Science.gov (United States)

    Teerakapibal, Rattavut; Gui, Yue; Yu, Lian

    2018-01-05

    Inhibit the fast surface crystallization of amorphous drugs with gelatin nano-coatings. The free surface of amorphous films of indomethacin or nifedipine was coated by a gelatin solution (type A or B) and dried. The coating's effect on surface crystallization was evaluated. Coating thickness was estimated from mass change after coating. For indomethacin (weak acid, pK a  = 4.5), a gelatin coating of either type deposited at pH 5 and 10 inhibited its fast surface crystal growth. The coating thickness was 20 ± 10 nm. A gelatin coating deposited at pH 3, however, provided no protective effect. These results suggest that an effective gelatin coating does not require that the drug and the polymer have opposite charges. The ineffective pH 3 coating might reflect the poor wetting of indomethacin's neutral, hydrophobic surface by the coating solution. For nifedipine (weak base, pK a  = 2.6), a gelatin coating of either type deposited at pH 5 inhibited its fast surface crystal growth. Gelatin nano-coatings can be conveniently applied to amorphous drugs from solution to inhibit fast surface crystallization. Unlike strong polyelectrolyte coatings, a protective gelatin coating does not require strict pairing of opposite charges. This could make gelatin coating a versatile, pharmaceutically acceptable coating for stabilizing amorphous drugs.

  12. Effects of composition and layer thickness of a butyl acrylate/acrylic acid copolymer on the adhesion properties

    Energy Technology Data Exchange (ETDEWEB)

    Ghim, Deoukchen; Kim, Jung Hyeun [University of Seoul, Seoul (Korea, Republic of)

    2016-02-15

    Acrylic pressure-sensitive adhesives are synthesized by solution copolymerization using n-butyl acrylate and acrylic acid (AA) in ethyl acetate anhydrous. The copolymer composition is controlled for good adhesive properties by varying AA content. The monomer conversion is measured by the gravimetric method and FTIR technique. The adhesive layer thickness is measured by scanning electron microscopy, and the adhesive properties are evaluated with loop tack, 180 .deg. peel, and holding time measurements. The peel force increases with increasing the AA content up to 3 wt% and decreases at the AA content higher than 3 wt%, but the tack force decreases with increasing the AA content. The holding time increases with increasing the AA content, and it shows a similar trend with the T{sub g} of adhesives. The increase of layer thickness improves tack and peel forces, but it weakens the holding power. A tape thickness of about 20 μm shows well-balanced properties at 3 wt% AA content in the acrylic copolymer system.

  13. Design and fabrication of optical thin film layers with variable thickness profile for producing variable reflectivity mirrors

    Directory of Open Access Journals (Sweden)

    Hamid R fallah

    2006-12-01

    Full Text Available   The design method and fabrication of mirrors with variable reflectivity are presented. To fabricate such a mirror a fixed mask with a circular aperture is used. The circular aperture is considered as an extended source with cosx(θas its diffusion distribution function and is the parameter for the distribution function of the particles through the aperture. The thickness profile of deposited layer is a function of this distribution. In this work, the coating system is calibrated for the materials which are used and then the parameter of the diffusion distribution function of the particles through the circular aperture is defined by experiments. Using these results, a graph is presented which connects the parameter of the circular aperture to the parameters of the thickness profile. It is then possible to deposit any type of variable reflectivity mirror using this graph. Finally, the effect of the uncertainty in measuring layer thicknesses on the phase of reflected wave and transmitted wave is investigated.

  14. Effects of composition and layer thickness of a butyl acrylate/acrylic acid copolymer on the adhesion properties

    International Nuclear Information System (INIS)

    Ghim, Deoukchen; Kim, Jung Hyeun

    2016-01-01

    Acrylic pressure-sensitive adhesives are synthesized by solution copolymerization using n-butyl acrylate and acrylic acid (AA) in ethyl acetate anhydrous. The copolymer composition is controlled for good adhesive properties by varying AA content. The monomer conversion is measured by the gravimetric method and FTIR technique. The adhesive layer thickness is measured by scanning electron microscopy, and the adhesive properties are evaluated with loop tack, 180 .deg. peel, and holding time measurements. The peel force increases with increasing the AA content up to 3 wt% and decreases at the AA content higher than 3 wt%, but the tack force decreases with increasing the AA content. The holding time increases with increasing the AA content, and it shows a similar trend with the T g of adhesives. The increase of layer thickness improves tack and peel forces, but it weakens the holding power. A tape thickness of about 20 μm shows well-balanced properties at 3 wt% AA content in the acrylic copolymer system.

  15. Retina nerve fiber layer and choroidal thickness changes in obstructive sleep apnea syndrome.

    Science.gov (United States)

    Ozge, Gokhan; Dogan, Deniz; Koylu, Mehmet Talay; Ayyildiz, Onder; Akincioglu, Dorukcan; Mumcuoglu, Tarkan; Mutlu, Fatih Mehmet

    2016-01-01

    The purpose of this study was to determine the effects of obstructive sleep apnea syndrome (OSAS) on the submacular and peripapillary retinal nerve fiber layer (RNFL) and choroidal thickness (ChT). Eighty-four eyes of 42 male patients with OSAS and 112 eyes of 56 aged-matched and body mass index-matched healthy male subjects were enrolled in this case-control study. The ChT and peripapillary RNFL thickness was measured using enhanced depth imaging optical coherence tomography. The ChT and RNFL thickness measurements of the groups were compared, and correlations among the Apnea Hypopnea Index (AHI) values and these measurements were calculated. Right and left eyes were separately evaluated. There were no significant differences in the subfoveal and temporal ChT between the groups (p > 0.05). The OSAS group had significantly thicker ChT at 0.5 and 1.5 mm nasal to the fovea in both eyes than the control group (p 0.05). Between AHI and mean RNFL thickness showed a median negative correlation (r = - 0.411, p = 0.001). The choroidal thickening in patients with OSAS may be associated with the pathophysiology of the neurodegeneration process of the disease.

  16. Synthesis of the Thickness Profile of the Waveguide Layer of the Thin Film Generalized Waveguide Luneburg Lens

    Directory of Open Access Journals (Sweden)

    Ayryan E.A.

    2016-01-01

    Full Text Available A local variation in the thickness of the waveguide layer of integrated optics waveguide causes a local decrease of phase velocity, and hence bending of rays and of the wave front. The relationship of the waveguide layer thickness profile h (y, z with the distribution of the effective refractive index of the waveguide β (y, z is described in terms of a particular model of waveguide solutions of the Maxwell equations. In the model of comparison waveguides the support of the thickness irregularity of the waveguide layer Δh coincides with the support of inhomogeneity of the effective refractive index Δβ. A more adequate but more cumbersome model of the adiabatic waveguide modes allows them to mismatch supp Δh ⊃ supp Δβ. In this paper, we solve the problem of the Δh reconstruction on the base of given Δβ of the thin film generalized waveguide Luneburg lens in a model of adiabatic waveguide modes. The solution is found in the form of a linear combination of Gaussian exponential functions and in the form of a cubic spline for the cylindrically symmetric Δh (r and in the form of a cubic spline for Δβ (r.

  17. CrN/AlN superlattice coatings synthesized by pulsed closed field unbalanced magnetron sputtering with different CrN layer thicknesses

    International Nuclear Information System (INIS)

    Lin Jianliang; Moore, John J.; Mishra, Brajendra; Pinkas, Malki; Zhang Xuhai; Sproul, William D.

    2009-01-01

    CrN/AlN superlattice coatings with different CrN layer thicknesses were prepared using a pulsed closed field unbalanced magnetron sputtering system. A decrease in the bilayer period from 12.4 to 3.0 nm and simultaneously an increase in the Al/(Cr + Al) ratio from 19.1 to 68.7 at.% were obtained in the CrN/AlN coatings when the Cr target power was decreased from 1200 to 200 W. The bilayer period and the structure of the coatings were characterized by means of low angle and high angle X-ray diffraction and transmission electron microscopy. The mechanical and tribological properties of the coatings were studied using the nanoindentation and ball-on-disc wear tests. It was found that CrN/AlN superlattice coatings synthesized in the current study exhibited a single phase face-centered cubic structure with well defined interfaces between CrN and AlN nanolayers. Decreases in the residual stress and the lattice parameter were identified with a decrease in the CrN layer thickness. The hardness of the coatings increased with a decrease in the bilayer period and the CrN layer thickness, and reached the highest value of 42 GPa at a bilayer period of 4.1 nm (CrN layer thickness of 1.5 nm, AlN layer thickness of 2.5 nm) and an Al/(Cr + Al) ratio of 59.3 at.% in the coatings. A low coefficient of friction of 0.35 and correspondingly low wear rate of 7 x 10 -7 mm 3 N -1 m -1 were also identified in this optimized CrN/AlN coating when sliding against a WC-6%Co ball.

  18. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure.

    Science.gov (United States)

    Lee, Du-Yeong; Lee, Seung-Eun; Shim, Tae-Hun; Park, Jea-Gun

    2016-12-01

    For the perpendicular-magnetic-tunneling-junction (p-MTJ) spin valve with a nanoscale-thick bottom Co2Fe6B2 free layer ex situ annealed at 400 °C, which has been used as a common p-MTJ structure, the Pt atoms of the Pt buffer layer diffused into the MgO tunneling barrier. This transformed the MgO tunneling barrier from a body-centered cubic (b.c.c) crystallized layer into a mixture of b.c.c, face-centered cubic, and amorphous layers and rapidly decreased the tunneling-magnetoresistance (TMR) ratio. The p-MTJ spin valve with a nanoscale-thick top Co2Fe6B2 free layer could prevent the Pt atoms diffusing into the MgO tunneling barrier during ex situ annealing at 400 °C because of non-necessity of a Pt buffer layer, demonstrating the TMR ratio of ~143 %.

  19. Phase transitions of ferromagnetic Ising films with amorphous surfaces

    International Nuclear Information System (INIS)

    Saber, M.; Ainane, A.; Dujardin, F.; Stebe, B.

    1997-08-01

    The critical behavior of a ferromagnetic Ising film with amorphous surfaces is studied within the framework of the effective field theory. The dependence of the critical temperature on exchange interaction strength ratio, film thickness, and structural fluctuation parameter is presented. It is found that an order-disorder magnetic transition occurs by varying the thickness of the film. Such a result is in agreement with experiments performed recently on Fe-films. (author). 39 refs, 4 figs

  20. Comparative study of the retinal nerve fibre layer thickness performed with optical coherence tomography and GDx scanning laser polarimetry in patients with primary open-angle glaucoma.

    Science.gov (United States)

    Wasyluk, Jaromir T; Jankowska-Lech, Irmina; Terelak-Borys, Barbara; Grabska-Liberek, Iwona

    2012-03-01

    We compared the parameters of retinal nerve fibre layer in patients with advanced glaucoma with the use of different OCT (Optical Coherence Tomograph) devices in relation to analogical measurements performed with GDx VCC (Nerve Fiber Analyzer with Variable Corneal Compensation) scanning laser polarimetry. Study subjects had advanced primary open-angle glaucoma, previously treated conservatively, diagnosed and confirmed by additional examinations (visual field, ophthalmoscopy of optic nerve, gonioscopy), A total of 10 patients were enrolled (9 women and 1 man), aged 18-70 years of age. Nineteen eyes with advanced glaucomatous neuropathy were examined. 1) Performing a threshold perimetry Octopus, G2 strategy and ophthalmoscopy of optic nerve to confirm the presence of advanced primary open-angle glaucoma; 2) performing a GDx VCC scanning laser polarimetry of retinal nerve fibre layer; 3) measuring the retinal nerve fibre layer thickness with 3 different optical coherence tomographs. The parameters of the retinal nerve fibre layer thickness are highly correlated between the GDx and OCT Stratus and 3D OCT-1000 devices in mean retinal nerve fibre layer thickness, retinal nerve fibre layer thickness in the upper sector, and correlation of NFI (GDx) with mean retinal nerve fibre layer thickness in OCT examinations. Absolute values of the retinal nerve fibre layer thickness (measured in µm) differ significantly between GDx and all OCT devices. Examination with OCT devices is a sensitive diagnostic method of glaucoma, with good correlation with the results of GDx scanning laser polarimetry of the patients.