Acido-basic control of the thermoelectric properties of poly(3,4-ethylenedioxythiophene)tosylate (PEDOT-Tos) thin films

DEFF Research Database (Denmark)

Khan, Zia Ullah; Bubnova, Olga; Jafari, Mohammad Javad

2015-01-01

study the variation in the thermoelectric properties by a simple acido-basic treatment. The emphasis of this study is to elucidate the chemical changes induced by acid (HCl) or base (NaOH) treatment in PEDOT-Tos thin films using various spectroscopic and structural techniques. We could identify changes...... in the nanoscale morphology due to anion exchange between tosylate and Cl- or OH-. But, we identified that changing the pH leads to a tuning of the oxidation level of the polymer, which can explain the changes in thermoelectric properties. Hence, a simple acid-base treatment allows finding the optimum...

Analysis and Experimental Investigation of Optimum Design of Thermoelectric Cooling/Heating System for Car Seat Climate Control (CSCC)

Science.gov (United States)

Elarusi, Abdulmunaem; Attar, Alaa; Lee, HoSung

2018-02-01

The optimum design of a thermoelectric system for application in car seat climate control has been modeled and its performance evaluated experimentally. The optimum design of the thermoelectric device combining two heat exchangers was obtained by using a newly developed optimization method based on the dimensional technique. Based on the analytical optimum design results, commercial thermoelectric cooler and heat sinks were selected to design and construct the climate control heat pump. This work focuses on testing the system performance in both cooling and heating modes to ensure accurate analytical modeling. Although the analytical performance was calculated using the simple ideal thermoelectric equations with effective thermoelectric material properties, it showed very good agreement with experiment for most operating conditions.

Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping

International Nuclear Information System (INIS)

Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka

2016-01-01

The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Science.gov (United States)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature

Tuning the Transport Properties of Layered Materials for Thermoelectric Applications using First-Principles Calculations

KAUST Repository

Saeed, Yasir

2014-05-11

Thermoelectric materials can convert waste heat into electric power and thus provide a way to reduce the dependence on fossil fuels. Our aim is to model the underlying materials properties and, in particular, the transport as controlled by electrons and lattice vibrations. The goal is to develop an understanding of the thermoelectric properties of selected materials at a fundamental level. The structural, electronic, optical, and phononic properties are studied in order to tune the transport, focusing on KxRhO2, NaxRhO2, PtSb2 and Bi2Se3. The investigations are based on density functional theory as implemented in the all electron linearized augmented plane wave plus local orbitals WIEN2k and pseudo potential Quantum-ESPRESSO codes. The thermoelectric properties are derived from Boltzmann transport theory under the constant relaxation time approximation, using the BoltzTraP code. We will discuss first the changes in the electronic band structure under variation of the cation concentration in layered KxRhO2 in the 2H phase and NaxRhO2 in the 3R phase. We will also study the hydrated phase. The deformations of the RhO6 octahedra turn out to govern the thermoelectric properties, where the high Seebeck coefficient results from ”pudding mold" bands. We investigate the thermoelectric properties of electron and hole doped PtSb2, which is not a layered material but shares “pudding mold" bands. PtSb2 has a high Seebeck coefficient at room temperature, which increases significantly under As alloying by bandgap opening and reduction of the lattice thermal conductivity. Bi2Se3 (bulk and thin film) has a larger bandgap then the well-known thermoelectric material Bi2Te3, which is important at high temperature. The structural stability, electronic structure, and transport properties of one to six quintuple layers of Bi2Se3 will be discussed. We also address the effect of strain on a single quintuple layer by phonon band structures. We will analyze the electronic and transport

Thermoelectric properties of doped BaHfO_3

International Nuclear Information System (INIS)

Dixit, Chandra Kr.; Bhamu, K. C.; Sharma, Ramesh

2016-01-01

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO_3 by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO_3 doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO_3 is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO_3 is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Thermoelectric properties of silicon nano pillars

Energy Technology Data Exchange (ETDEWEB)

Stranz, Andrej; Soekmen, Uensal; Waag, Andreas; Peiner, Erwin [Institute of Semiconductor Technology, Braunschweig (Germany)

2010-07-01

In order to establish silicon as a efficient thermoelectric material, its high thermal conductivity has to be reduced which is feasible, e.g., by nano structuring. Therefore, in this study Si-based sub-micron pillars of various dimensions were investigated. Using anisotropic etching followed by thermal oxidation we could fabricate pillars of diameters <500 nm, about 25 {mu}m in height with aspect ratios of more than 50. The distance between the pillars was varied from 500 nm to 10 micron. Besides the fabrication and structural characterization of sub-micron silicon pillars, and adequate metrology for measuring their thermoelectric properties was implemented. Commercial tungsten probes and self-made gold probes, as well as Wollaston wire probes were used for electrical and thermal conductivity, as well as Seebeck voltage measurements on single pillars in a scanning electron microscope equipped with nano manipulators.

Thermoelectric properties and nonstoichiometry of GaGeTe

Czech Academy of Sciences Publication Activity Database

Drašar, Č.; Kucek, V.; Beneš, L.; Lošťák, P.; Vlček, Milan

2012-01-01

Roč. 193, SI (2012), s. 42-46 ISSN 0022-4596 Institutional research plan: CEZ:AV0Z40500505 Keywords : gallium germanium telluride * thermoelectric properties * stoichiometry Subject RIV: CA - Inorganic Chemistry Impact factor: 2.040, year: 2012

Ab initio study of thermoelectric properties of doped SnO_2 superlattices

International Nuclear Information System (INIS)

Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

2015-01-01

Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

Science.gov (United States)

Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

A test system and supervisory control and data acquisition application with programmable logic controller for thermoelectric generators

International Nuclear Information System (INIS)

Ahiska, Rasit; Mamur, Hayati

2012-01-01

Highlights: ► A new TEG test measurement system with the PLC has been carried out. ► A new SCADA program has been written and tested for the test measurement system. ► An operator panel has been used for monitoring to the instant TEG data. ► All of the measurement data of TEG have been aggregated in the system. - Abstract: In this study, a new test measurement system and supervisory control and data acquisition application with programmable logic controller has been carried out to be enable the collection of the data of thermoelectric generator for the usage of thermoelectric modules as thermoelectric generator. During the production of the electric energy from the thermoelectric generator, the temperatures of the surfaces of the thermoelectric generator, current–voltage values obtained from output of the thermoelectric generator, hot and cold flows have been measured by the newly established system instantly. All these data have been monitored continuously from the computer and recorded by a supervisory control and data acquisition program. At the same time, in environments where there was no computer, an operator panel with the ability to communicate with the programmable logic controller has been added for the monitoring of the instant thermoelectric generator data. All of the measurement data of the thermoelectric generator have been aggregated in the new test measurement and supervisory control and data acquisition system. The setup test measurement system has been implemented on the thermoelectric generator system with about 10 W. Thermoelectric generators, Altec-GM-1 brand-coded have been examined by the new proposed test measurement system and the values of maximum power and thermoelectric generator efficiency were calculated by the programmable logic controller. When the obtained results were compared with the datasheets, the relative error for the maximum power was around 4% and the value for efficiency was below 3%.

Rapid characterization of thermoelectric properties of composition spread (La1-xCax)VO3 films

International Nuclear Information System (INIS)

Itaka, K.; Wang, Q.J.; Minami, H.; Kawaji, H.; Koinuma, H.

2004-01-01

Vanadium oxides possess various interesting properties due to multivalence of a vanadium atom and attract our interest as a target material for the exploration of new applications. We investigated vanadates (La 1-x Ca x )VO 3 with a perovskite structure as thermoelectric (TE) materials because heavy electrons in vanadates are expected to generate large thermopower. To proceed the investigation of thermoelectric properties of the composition spread library more efficiently, we devised a new instrument of multi-channel measurement of their thermoelectric properties. The polarity of Seebeck coefficients changed from positive (0≤x≤0.2) to negative (0.2 3 (x∼0)

Microstructures and thermoelectric properties of GeSbTe based layered compounds

Energy Technology Data Exchange (ETDEWEB)

Yan, F.; Zhu, T.J.; Zhao, X.B. [Zhejiang University, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Hangzhou (China); Dong, S.R. [Zhejiang University, Department of Information and Electronics Engineering, Hangzhou (China)

2007-08-15

Microstructures and thermoelectric properties of Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge{sub 2}Sb{sub 2}Te{sub 5} compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge{sub 1}Sb{sub 2}Te{sub 4} and Ge{sub 2}Sb{sub 2}Te{sub 5} attained 0.975 x 10{sup -3} Wm{sup -1}K{sup -2} at 750 K and 0.767 x 10{sup -3} Wm{sup -1}K{sup -2} at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. (orig.)

Low-Temperature Thermoelectric Properties of Fe2VAl with Partial Cobalt Doping

Science.gov (United States)

Liu, Chang; Morelli, Donald T.

2012-06-01

Ternary metallic alloy Fe2VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler-type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe1- x Co x )2VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the material's electronic and thermal properties are discussed.

Large-scale synthesis of lead telluride (PbTe) nanotube-based nanocomposites with tunable morphology, crystallinity and thermoelectric properties

Science.gov (United States)

Park, Kee-Ryung; Cho, Hong-Baek; Song, Yoseb; Kim, Seil; Kwon, Young-Tae; Ryu, Seung Han; Lim, Jae-Hong; Lee, Woo-Jin; Choa, Yong-Ho

2018-04-01

A few millimeter-long lead telluride (PbTe) hollow nanofibers with thermoelectric properties was synthesized for the first time with high through manner via three-step sequential process of electrospinning, electrodeposition and cationic exchange reaction. As-synthesized electrospun Ag nanofibers with ultra-long aspect ratio of 10,000 were Te electrodeposited to obtain silver telluride nanotubes and underwent cationic exchange reaction in Pb(NO3)2 solution to obtain polycrystalline PbTe nanotubes with average diameter of 100 nm with 20 nm of wall thickness. Variation of the Ag-to-Pb ratio in the AgxTey-PbTe nanocomposites during the cationic exchange reaction enabled to control the thermoelectric properties of resulting 1D hollow nanofibers. The diameter of Ag nanofiber is the key factor to determine the final dimension of the PbTe nanotubes in the topotactic transformation and the content of Ag ion leads to the enhancement of thermoelectric properties in the AgxTey-PbTe nanocomposites. The synthesized 1D nanocomposite mats showed the highest value of Seebeck coefficient of 433 μV/K (at 300 K) when the remained Ag content was 30%, while the power factor reached highest to 0.567 μW/mK2 for the pure PbTe nanotubes. The enhancement of thermoelectric properties and the composite crystallinity are elucidated with relation to Ag contents in the resulting 1D nanocomposites.

The thermoelectric process

Energy Technology Data Exchange (ETDEWEB)

Vining, C B

1997-07-01

The efficiency of thermoelectric technology today is limited by the properties of available thermoelectric materials and a wide variety of new approaches to developing better materials have recently been suggested. The key goal is to find a material with a large ZT, the dimensionless thermoelectric figure of merit. However, if an analogy is drawn between thermoelectric technology and gas-cycle engines then selecting different materials for the thermoelements is analogous to selecting a different working gas for the mechanical engine. And an attempt to improve ZT is analogous to an attempt to improve certain thermodynamic properties of the working-gas. An alternative approach is to focus on the thermoelectric process itself (rather than on ZT), which is analogous to considering alternate cycles such as Stirling vs. Brayton vs. Rankine etc., rather than merely considering alternative gases. Focusing on the process is a radically different approach compared to previous studies focusing on ZT. Aspects of the thermoelectric process and alternative approaches to efficient thermoelectric conversion are discussed.

Edge magnetism impact on electrical conductance and thermoelectric properties of graphenelike nanoribbons

Science.gov (United States)

Krompiewski, Stefan; Cuniberti, Gianaurelio

2017-10-01

Edge states in narrow quasi-two-dimensional nanostructures determine, to a large extent, their electric, thermoelectric, and magnetic properties. Nonmagnetic edge states may quite often lead to topological-insulator-type behavior. However, another scenario develops when the zigzag edges are magnetic and the time reversal symmetry is broken. In this work we report on the electronic band structure modifications, electrical conductance, and thermoelectric properties of narrow zigzag nanoribbons with spontaneously magnetized edges. Theoretical studies based on the Kane-Mele-Hubbard tight-binding model show that for silicene, germanene, and stanene both the Seebeck coefficient and the thermoelectric power factor are strongly enhanced for energies close to the charge neutrality point. A perpendicular gate voltage lifts the spin degeneracy of energy bands in the ground state with antiparallel magnetized zigzag edges and makes the electrical conductance significantly spin polarized. Simultaneously the gate voltage worsens the thermoelectric performance. Estimated room-temperature figures of merit for the aforementioned nanoribbons can exceed a value of 3 if phonon thermal conductances are adequately reduced.

Thermoelectric properties of doped BaHfO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Dr. Shakuntala Misra National Rehabilitation University, Lucknow-229001, U.P India (India); Bhamu, K. C. [Department of Physics, Goa University, Goa-403 206 (India); Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com [Dept. of Physics, Feroze Gandhi Institute of Engineering & Technology, Raebareli-229001, U.P India (India)

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. The doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.

Thermoelectric behavior of conducting polymers: On the possibility of off-diagonal thermoelectricity

Energy Technology Data Exchange (ETDEWEB)

Mateeva, N; Niculescu, H; Schlenoff, J; Testardi, L

1997-07-01

Non-cubic materials, when structurally aligned, possess sufficient anisotropy to exhibit thermoelectric effects where the electrical and thermal currents are orthogonal (off-diagonal thermoelectricity). The authors discuss the benefits of this form of thermoelectricity for devices and describe a search for suitable properties in the air-stable conducting polymers polyaniline and polypyrrole. They find the simple and general correlation that the logarithm of the electrical conductivity scales linearly with the Seebeck coefficient on doping but with proportionality in excess of the conventional prediction for thermoelectricity. The correlation is unexpected in its universality and unfavorable for thermoelectric applications. A simple model suggests that mobile charges of both signs exist in these polymers, and this leads to reduced thermoelectric efficiency. They also briefly discuss non air-stable polyacetylene, where ambipolar transport does not appear to occur, and where properties seem more favorable for thermoelectricity.

A Review of SnSe: Growth and Thermoelectric Properties

Science.gov (United States)

Nguyen, Van Quang; Kim, Jungdae; Cho, Sunglae

2018-04-01

SnSe is a 2D semiconductor with an indirect energy gap of 0.86 - 1 eV; it is widely used in solar cell, optoelectronics, and electronic device applications. Recently, SnSe has been considered as a robust candidate for energy conversion applications due to its high thermoelectric performance ( ZT = 2.6 in p-type and 2.2 in n-type), which is assigned mainly to its anhamornic bonding leading to an ultralow thermal conductivity. In this review, we first discuss the crystalline and electronic structures of SnSe and the source of its p-type characteristic. Then, some typical single crystal and polycrystal growth techniques, as well as an epitaxial thin film growth technique, are outlined. The reported thermoelectric properties of SnSe grown by using each technique are also reviewed. Finally, we will describe some remaining issues concerning the use of SnSe for thermoelectric applications.

Thermoelectric and mechanical properties of spark plasma sintered Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}: Promising thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, Materials Physics and Engineering, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2014-12-29

We report the synthesis of thermoelectric compounds, Cu{sub 3}SbSe{sub 3} and Cu{sub 3}SbSe{sub 4}, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu{sub 3}SbSe{sub 4} exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu{sub 3}SbSe{sub 3}, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu{sub 3}SbSe{sub 4} was found to be ∼1.2 as compared to 0.2 V{sup −1} for Cu{sub 3}SbSe{sub 3} at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

KAUST Repository

Gandi, Appala

2017-09-18

We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address the effects of doping. While many half-Heuser alloys show excellent thermoelectric performance, the materials under study are special by supporting both n- and p-doping. We identify the reasons for this balanced thermoelectric transport and explain why experimentally p-doping is superior to n-doping. We also determine the spectrum of phonon mean free paths to guide grain refinement methods to enhance the thermoelectric figure of merit.

Designing of Bulk Nano-Structures with Enhanced Thermoelectric Properties

National Research Council Canada - National Science Library

Kanatzidis, Mercouri; Hogan, Timothy; Murray, Chris

2007-01-01

.... K2Bi8Se13 is a member of this series and was found to be a promising thermoelectric. The charge transport properties were studied under pressure, where a significant increase in the power factor was observed...

Designing of Bulk Nano-Structures With Enhanced Thermoelectric Properties

National Research Council Canada - National Science Library

Kanatzidis, Mercouri G

2007-01-01

.... K2Bi8Se13 is a member of this series and was found to be a promising thermoelectric. The charge transport properties were studied under pressure, where a significant increase in the power factor was observed...

Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

Science.gov (United States)

Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

2018-05-01

SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

KAUST Repository

Abutaha, Anas I.

2013-02-06

We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.

Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

2015-11-15

Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Impact of microstructure on the thermoelectric properties of the ternary compound Ce{sub 3}Cu{sub 3}Sb{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Witas, Piotr, E-mail: pwitas@us.edu.pl [Institute of Physics, University of Silesia, Uniwersytecka 4, Katowice 40-007 (Poland); Goraus, Jerzy; Zajdel, Paweł; Balin, Katarzyna; Koperski, Janusz [Institute of Physics, University of Silesia, Uniwersytecka 4, Katowice 40-007 (Poland); Lelątko, Józef [Institute of Materials Science, University of Silesia, 75 Pułku Piechoty 1a, Chorzów 41-500 (Poland); Ślebarski, Andrzej [Institute of Physics, University of Silesia, Uniwersytecka 4, Katowice 40-007 (Poland)

2017-01-15

We present detailed structural and thermoelectric studies of the ternary compound Ce{sub 3}Cu{sub 3}Sb{sub 4}. This material is of interest due to previously reported considerable thermopower above room temperature (∼ 100 μV/K) and low thermal conductivity (2 W/(m K)). Here, we present detailed studies concerning microstructural and thermoelectric data, their variation across the samples and possible explanations for the observed behaviour. We have used X-ray diffraction, scanning electron microscopy (SEM), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) for microstructural analysis. The thermoelectric properties were examined using a physical property measurement system (PPMS). We analyse the impact of the sample quality on the thermoelectric properties. The most unstable parameter is the material resistivity which varies between 1.5 and 15 mΩ cm at room temperature. The properties variability is mainly due to structural defects caused by stresses during material preparation and also due to formation of foreign phases CeCuSb{sub 2} and CeSb. The figure of merit ZT is also strongly dependent on the quality of the sample. The largest value ZT ≈ 0.15 at 400 K is determined for the almost stoichiometric sample with small amounts of a impurity phases. - Highlights: •The Ce{sub 3}Cu{sub 3}Sb{sub 4} has considerable thermoelectric properties and potential for further chemical and/or structural modification. •The control over foreign phases formation is challenging. •The defects arising during arc melting process highly deteriorate ZT of material.

Effect of spark plasma sintering conditions on the thermoelectric properties of (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} alloys

Energy Technology Data Exchange (ETDEWEB)

Lim, Sang-Soon [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Ju-Heon [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kwon, Beomjin; Kim, Seong Keun [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Ki-Suk; Baik, Jeong Min [School of Materials and Science Engineering, UNIST, Ulsan 689-798 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Choi, Won Jun [Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Kim, Dong-Ik [High Temp. Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Hyun, Dow-Bin; Kim, Jin-Sang [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Baek, Seung-Hyub, E-mail: shbaek77@kist.re.kr [Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); KIST-UNIST Ulsan Center for Convergent Materials, UNIST, Ulsan 689-798 (Korea, Republic of); Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

2016-09-05

As a field-assisted technique, spark plasma sintering (SPS) enables densification of specimens in a very short period of time compared to other sintering techniques. For high performance thermoelectric material synthesis, SPS is widely used to fabricate nanograin-structured thermoelectric materials by rapidly densifying the nanopowders suppressing grain growth. However, the microstructural evolution behavior of thermoelectric materials by SPS, another important process during sintering, has been rarely studied. Here, we explore SPS as a tool to control the microstructure by long-time SPS. Using p-type (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3} thermoelectric materials as a model system, we systematically vary SPS temperature and time to understand the correlations between SPS conditions, microstructural evolution, and the thermoelectric properties. Our results show that the relatively low eutectic temperature (∼420 °C) and the existence of volatile tellurium (Te) are critical factors to determine both microstructure and thermoelectric property. In the liquid-phase sintering regime, rapid evaporation of Te leads to a strong dependence of thermoelectric property on SPS time. On the other hand, in the solid-phase sintering regime, there is a weak dependence on SPS time. The optimum thermoelectric figure-of-merit (Z) of 2.93 × 10{sup −3}/K is achieved by SPS at 500 °C for 30 min. Our results will provide an insight on the optimization of SPS conditions for materials containing volatile elements with low eutectic temperature. - Highlights: • Spark plasma sintering (SPS) is used to synthesize the thermoelectric (Bi{sub 0.25}Sb{sub 0.75}){sub 2}Te{sub 3}. • Liquid phase and volatile element are a key for the microstructure and thermoelectric property. • Thermoelectric figure-of-merit of 2.9 × 10{sup −3}/K is achieved at 500 °C for 30 min.

Plasma synthesis of nanostructures for improved thermoelectric properties

International Nuclear Information System (INIS)

Petermann, Nils; Hecht, Christian; Schulz, Christof; Wiggers, Hartmut; Stein, Niklas; Schierning, Gabi; Theissmann, Ralf; Stoib, Benedikt; Brandt, Martin S

2011-01-01

The utilization of silicon-based materials for thermoelectrics is studied with respect to the synthesis and processing of doped silicon nanoparticles from gas phase plasma synthesis. It is found that plasma synthesis enables the formation of spherical, highly crystalline and soft-agglomerated materials. We discuss the requirements for the formation of dense sintered bodies, while keeping the crystallite size small. Small particles a few tens of nanometres and below that are easily achievable from plasma synthesis, and a weak surface oxidation, both lead to a pronounced sinter activity about 350 K below the temperature usually needed for the successful densification of silicon. The thermoelectric properties of our sintered materials are comparable to the best results found for nanocrystalline silicon prepared by methods other than plasma synthesis.

Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

International Nuclear Information System (INIS)

Goto, Masahiro; Sasaki, Michiko; Xu, Yibin; Zhan, Tianzhuo; Isoda, Yukihiro; Shinohara, Yoshikazu

2017-01-01

Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

Control of p-type and n-type thermoelectric properties of bismuth telluride thin films by combinatorial sputter coating technology

Energy Technology Data Exchange (ETDEWEB)

Goto, Masahiro, E-mail: goto.masahiro@nims.go.jp [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sasaki, Michiko [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Xu, Yibin [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Materials Database Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Zhan, Tianzhuo [Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Isoda, Yukihiro [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Shinohara, Yoshikazu [Thermoelectric Materials Group, Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Thermal Management and Thermoelectric Materials Group, Center for Materials Research by Information Integration (CMI2), National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

2017-06-15

Highlights: • p- and n-type bismuth telluride thin films have been synthesized using a combinatorial sputter coating system (COSCOS) while changing only one of the experimental conditions, the RF power. • The dimensionless figure of merit (ZT) was optimized by the technique. • The fabrication of a Π-structured TE device was demonstrated. - Abstract: p- and n-type bismuth telluride thin films have been synthesized by using a combinatorial sputter coating system (COSCOS). The crystal structure and crystal preferred orientation of the thin films were changed by controlling the coating condition of the radio frequency (RF) power during the sputter coating. As a result, the p- and n-type films and their dimensionless figure of merit (ZT) were optimized by the technique. The properties of the thin films such as the crystal structure, crystal preferred orientation, material composition and surface morphology were analyzed by X-ray diffraction, energy-dispersive X-ray spectroscopy and atomic force microscopy. Also, the thermoelectric properties of the Seebeck coefficient, electrical conductivity and thermal conductivity were measured. ZT for n- and p-type bismuth telluride thin films was found to be 0.27 and 0.40 at RF powers of 90 and 120 W, respectively. The proposed technology can be used to fabricate thermoelectric p–n modules of bismuth telluride without any doping process.

La 1-x Ca x MnO 3 semiconducting nanostructures: morphology and thermoelectric properties.

Science.gov (United States)

Culebras, Mario; Torán, Raquel; Gómez, Clara M; Cantarero, Andrés

2014-01-01

Semiconducting metallic oxides, especially perosvkite materials, are great candidates for thermoelectric applications due to several advantages over traditionally metallic alloys such as low production costs and high chemical stability at high temperatures. Nanostructuration can be the key to develop highly efficient thermoelectric materials. In this work, La 1-x Ca x MnO 3 perosvkite nanostructures with Ca as a dopant have been synthesized by the hydrothermal method to be used in thermoelectric applications at room temperature. Several heat treatments have been made in all samples, leading to a change in their morphology and thermoelectric properties. The best thermoelectric efficiency has been obtained for a Ca content of x=0.5. The electrical conductivity and Seebeck coefficient are strongly related to the calcium content.

Modelling of thermoelectric materials

DEFF Research Database (Denmark)

Bjerg, Lasse

In order to discover new good thermoelectric materials, there are essentially two ways. One way is to go to the laboratory, synthesise a new material, and measure the thermoelectric properties. The amount of compounds, which can be investigated this way is limited because the process is time...... consuming. Another approach is to model the thermoelectric properties of a material on a computer. Several crystal structures can be investigated this way without use of much man power. I have chosen the latter approach. Using density functional theory I am able to calculate the band structure of a material....... This band structure I can then use to calculate the thermoelectric properties of the material. With these results I have investigated several materials and found the optimum theoretical doping concentration. If materials with these doping concentrations be synthesised, considerably better thermoelectric...

Thermoelectric Control Of Temperatures Of Pressure Sensors

Science.gov (United States)

Burkett, Cecil G., Jr.; West, James W.; Hutchinson, Mark A.; Lawrence, Robert M.; Crum, James R.

1995-01-01

Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.

General Approach for Composite Thermoelectric Systems with Thermal Coupling: The Case of a Dual Thermoelectric Cooler

Directory of Open Access Journals (Sweden)

Cuautli Yanehowi Flores-Niño

2015-06-01

Full Text Available In this work, we show a general approach for inhomogeneous composite thermoelectric systems, and as an illustrative case, we consider a dual thermoelectric cooler. This composite cooler consists of two thermoelectric modules (TEMs connected thermally in parallel and electrically in series. Each TEM has different thermoelectric (TE properties, namely thermal conductance, electrical resistance and the Seebeck coefficient. The system is coupled by thermal conductances to heat reservoirs. The proposed approach consists of derivation of the dimensionless thermoelectric properties for the whole system. Thus, we obtain an equivalent figure of merit whose impact and meaning is discussed. We make use of dimensionless equations to study the impact of the thermal conductance matching on the cooling capacity and the coefficient of the performance of the system. The equivalent thermoelectric properties derived with our formalism include the external conductances and all intrinsic thermoelectric properties of each component of the system. Our proposed approach permits us changing the thermoelectric parameters of the TEMs and the working conditions of the composite system. Furthermore, our analysis shows the effect of the number of thermocouples on the system. These considerations are very useful for the design of thermoelectric composite systems. We reproduce the qualitative behavior of a commercial composite TEM connected electrically in series.

Recent Progress on PEDOT-Based Thermoelectric Materials.

Science.gov (United States)

Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

2015-02-16

The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators.

Colligative thermoelectric transport properties in n-type filled CoSb3 determined by guest electrons in a host lattice

International Nuclear Information System (INIS)

Lim, Young Soo; Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon; Park, Cheol-Hee; Kim, Tae Hoon; Park, PumSuk; Kim, Il-Ho; Yang, Jihui

2016-01-01

Among many kinds of thermoelectric materials, CoSb 3 has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb 3 from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb 3 . Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb 3 . This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb 3 materials.

Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

Science.gov (United States)

Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

2017-07-01

Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

Thermoelectric properties of WSi{sub 2}–Si{sub x}Ge{sub 1−x} composites

Energy Technology Data Exchange (ETDEWEB)

Dynys, F.W.; Sayir, A. [NASA Glenn Research Center, Cleveland, OH 44135 (United States); Mackey, J., E-mail: jam151@zips.uakron.edu [Department of Mechanical Engineering, University of Akron, Akron, OH 44325 (United States); Sehirlioglu, A. [Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106 (United States)

2014-08-01

Highlights: • We explore a novel W/Si/Ge composite system for thermoelectric applications. • The influence of crucible selection on electrical properties is investigated. • Introduction of W can reduce the expensive Ge component of the alloy. - Abstract: Thermoelectric properties of the W/Si/Ge alloy system have been investigated with varying concentration levels of germanium and tungsten. The alloys were fabricated by directional solidification with the Bridgman method using boron nitride and fused silica crucibles. The effect of crucible contamination was investigated and found to result in doping the system to suitable levels for thermoelectric applications. The system has been demonstrated as a suitable high temperature p-type thermoelectric material exhibiting high power factors, >3000 μW/m K{sup 2}. Seebeck coefficients of the system are on the order of +300 μV/K and electrical conductivities of 2.8 × 10{sup 4} S/m at the optimum operating temperature. The best composition, 0.9 at% W/9.3 at% Ge, achieved a figure of merit comparable to RTG values over the temperature range of interest. The results suggest that W addition can reduce the use of expensive Ge component of the alloy. Reported are the details of processing conditions, microstructure development, and temperature dependent thermoelectric properties. The material system was stable at the temperatures required for NASA’s radioisotope thermoelectric generators.

Oxidant-Dependent Thermoelectric Properties of Undoped ZnO Films by Atomic Layer Deposition

KAUST Repository

Kim, Hyunho

2017-02-27

Extraordinary oxidant-dependent changes in the thermoelectric properties of undoped ZnO thin films deposited by atomic layer deposition (ALD) have been observed. Specifically, deionized water and ozone oxidants are used in the growth of ZnO by ALD using diethylzinc as a zinc precursor. No substitutional atoms have been added to the ZnO films. By using ozone as an oxidant instead of water, a thermoelectric power factor (σS) of 5.76 × 10 W m K is obtained at 705 K for undoped ZnO films. In contrast, the maximum power factor for the water-based ZnO film is only 2.89 × 10 W m K at 746 K. Materials analysis results indicate that the oxygen vacancy levels in the water- and ozone-grown ZnO films are essentially the same, but the difference comes from Zn-related defects present in the ZnO films. The data suggest that the strong oxidant effect on thermoelectric performance can be explained by a mechanism involving point defect-induced differences in carrier concentration between these two oxides and a self-compensation effect in water-based ZnO due to the competitive formations of both oxygen and zinc vacancies. This strong oxidant effect on the thermoelectric properties of undoped ZnO films provides a pathway to improve the thermoelectric performance of this important material.

Thermoelectric properties and performance of flexible reduced graphene oxide films up to 3,000 K

Science.gov (United States)

Li, Tian; Pickel, Andrea D.; Yao, Yonggang; Chen, Yanan; Zeng, Yuqiang; Lacey, Steven D.; Li, Yiju; Wang, Yilin; Dai, Jiaqi; Wang, Yanbin; Yang, Bao; Fuhrer, Michael S.; Marconnet, Amy; Dames, Chris; Drew, Dennis H.; Hu, Liangbing

2018-02-01

The development of ultrahigh-temperature thermoelectric materials could enable thermoelectric topping of combustion power cycles as well as extending the range of direct thermoelectric power generation in concentrated solar power. However, thermoelectric operation temperatures have been restricted to under 1,500 K due to the lack of suitable materials. Here, we demonstrate a thermoelectric conversion material based on high-temperature reduced graphene oxide nanosheets that can perform reliably up to 3,000 K. After a reduction treatment at 3,300 K, the nanosheet film exhibits an increased conductivity to 4,000 S cm-1 at 3,000 K and a high power factor S2σ = 54.5 µW cm-1 K-2. We report measurements characterizing the film's thermoelectric properties up to 3,000 K. The reduced graphene oxide film also exhibits a high broadband radiation absorbance and can act as both a radiative receiver and a thermoelectric generator. The printable, lightweight and flexible film is attractive for system integration and scalable manufacturing.

The preparation and thermoelectric properties of molten salt electrodeposited boron wafers

International Nuclear Information System (INIS)

Kumashiro, Y.; Ozaki, S.; Sato, K.; Kataoka, Y.; Hirata, K.; Yokoyama, T.; Nagatani, S.; Kajiyama, K.

2004-01-01

We have prepared electrodeposited boron wafer by molten salts with KBF 4 -KF at 680 deg. C using graphite crucible for anode and silicon wafer and nickel plate for cathodes. Experiments were performed by various molar ratios KBF 4 /KF and current densities. Amorphous p-type boron wafers with purity 87% was deposited on nickel plate for 1 h. Thermal diffusivity by ring-flash method and heat capacity by DSC method produced thermal conductivity showing amorphous behavior in the entire temperature range. The systematical results on thermoelectric properties were obtained for the wafers prepared with KBF 4 -KF (66-34 mol%) under various current densities in the range 1-2 A/cm 2 . The temperature dependencies of electrical conductivity showed thermal activated type with activation energy of 0.5 eV. Thermoelectric power tended to increase with increasing temperature up to high temperatures with high values of (1-10) mV/K. Thermoelectric figure-of-merit was 10 -4 /K at high temperatures. Estimated efficiency of thermoelectric energy conversion would be calculated to be 4-5%

Structural and thermoelectric properties of zintl-phase CaLiPn (Pn=As, Sb, Bi)

Energy Technology Data Exchange (ETDEWEB)

Chandran, Anoop K.; Gudelli, Vijay Kumar; Sreeparvathy, P.C.; Kanchana, V., E-mail: kanchana@iith.ac.in

2016-11-15

First-principles calculations were carried out to study the structural, mechanical, dynamical and transport properties of zintl phase materials CaLiPn (Pn=As, Sb and Bi). We have used two different approaches to solve the system based on density functional theory. The plane wave pseudopotential approach has been used to study the structural and dynamical properties whereas, full potential linear augment plane wave method is used to examine the electronic structure, mechanical and thermoelectric properties. The calculated ground-state properties agree quite well with experimental values. The computed electronic structure shows the investigated compounds to be direct band gap semiconductors. Further, we have calculated the thermoelectric properties of all the investigated compounds for both the carriers at various temperatures. We found a high thermopower for both the carriers, especially n-type doping to be more favourable, which enabled us to predict that CaLiPn might have promising applications as a good thermoelectric material. Further, the phonon dispersion curves of the investigated compounds showed flat phonon modes and we also find lower optical and acoustic modes to cut each other at the lower frequency range, which further indicate the investigated compounds to possess reasonably low thermal conductivity. We have also analysed the low value of the thermal conductivity through the empirical relations and discussions are presented here. - Highlights: • Electronic band structure and chemical bonding. • Single crystalline elastic constants and poly crystalline elastic moduli. • Thermoelectric properties of zintl phase. • Lattice dynamics and phonon density of states.

Perspective: Web-based machine learning models for real-time screening of thermoelectric materials properties

Science.gov (United States)

Gaultois, Michael W.; Oliynyk, Anton O.; Mar, Arthur; Sparks, Taylor D.; Mulholland, Gregory J.; Meredig, Bryce

2016-05-01

The experimental search for new thermoelectric materials remains largely confined to a limited set of successful chemical and structural families, such as chalcogenides, skutterudites, and Zintl phases. In principle, computational tools such as density functional theory (DFT) offer the possibility of rationally guiding experimental synthesis efforts toward very different chemistries. However, in practice, predicting thermoelectric properties from first principles remains a challenging endeavor [J. Carrete et al., Phys. Rev. X 4, 011019 (2014)], and experimental researchers generally do not directly use computation to drive their own synthesis efforts. To bridge this practical gap between experimental needs and computational tools, we report an open machine learning-based recommendation engine (http://thermoelectrics.citrination.com) for materials researchers that suggests promising new thermoelectric compositions based on pre-screening about 25 000 known materials and also evaluates the feasibility of user-designed compounds. We show this engine can identify interesting chemistries very different from known thermoelectrics. Specifically, we describe the experimental characterization of one example set of compounds derived from our engine, RE12Co5Bi (RE = Gd, Er), which exhibits surprising thermoelectric performance given its unprecedentedly high loading with metallic d and f block elements and warrants further investigation as a new thermoelectric material platform. We show that our engine predicts this family of materials to have low thermal and high electrical conductivities, but modest Seebeck coefficient, all of which are confirmed experimentally. We note that the engine also predicts materials that may simultaneously optimize all three properties entering into zT; we selected RE12Co5Bi for this study due to its interesting chemical composition and known facile synthesis.

Preparation of 2D MoSe2/PEDOT:PSS composite and its thermoelectric properties

Science.gov (United States)

Li, Xia; Liu, Congcong; Wang, Tongzhou; Wang, Wenfang; Wang, Xiaodong; Jiang, Qinglin; Jiang, Fengxing; Xu, Jingkun

2017-11-01

Nowadays, inorganic/polymer composites have attracted significant interest in thermoelectric field, since the composite materials usually achieve their respective advantages complementary to each other. In this work, molybdenum diselenide (MoSe2) was synthesized by a facile hydrothermal method. Solution processible two-dimensional (2D) MoSe2 nanosheets (NSs) were successfully obtained using dimethylsulfoxide (DMSO) solvent or lithium intercalation procedure. Combined with Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), MoSe2/PEDOT:PSS composite thin films were fabricated by direct vacuum-filtration method. Thermoelectric properties of composite thin films were investigated systematically and found that 2D MoSe2 NSs and PEDOT:PSS have the synergistic effect on improving thermoelectric properties. The maximum power factor was calculated to be 48.6 µW m-1 K-2 with 5 wt% 2D MoSe2 NSs embedding into PEDOT:PSS matrix, which is almost 69% higher than that of pure PEDOT:PSS. These results demonstrate that 2D inorganic/polymer composite method is one of promising strategies to get high-performance polymer-based thermoelectric composites.

Fully Ab-Initio Determination of the Thermoelectric Properties of Half-Heusler NiTiSn: Crucial Role of Interstitial Ni Defects.

Science.gov (United States)

Berche, Alexandre; Jund, Philippe

2018-05-23

For thermoelectric applications, ab initio methods generally fail to predict the transport properties of the materials because of their inability to predict properly the carrier concentrations that control the electronic properties. In this work, a methodology to fill in this gap is applied on the NiTiSn half Heusler phase. For that, we show that the main defects act as donor of electrons and are responsible of the electronic properties of the material. Indeed, the presence of Ni i interstitial defects explains the experimental valence band spectrum and its associated band gap reported in the literature. Moreover, combining the DOS of the solid solutions with the determination of the energy of formation of charged defects, we show that Ni i defects are also responsible of the measured carrier concentration in experimentally supposed "pure" NiTiSn compounds. Subsequently the thermoelectric properties of NiTiSn can be calculated using a fully ab initio description and an overall correct agreement with experiments is obtained. This methodology can be extended to predict the result of extrinsic doping and thus to select the most efficient dopant for specific thermoelectric applications.

Introduction to thermoelectricity

CERN Document Server

Goldsmid, H Julian

2010-01-01

Introduction to Thermoelectricity is the latest work by Professor Julian Goldsmid drawing on his 55 years experience in the field. The theory of the thermoelectric and related phenomena is presented in sufficient detail to enable researchers to understand their observations and develop improved thermoelectric materials. The methods for the selection of materials and their improvement are discussed. Thermoelectric materials for use in refrigeration and electrical generation are reviewed. Experimental techniques for the measurement of properties and for the production of thermoelements are described. Special emphasis is placed on nanotechnology which promises to yield great improvements in the efficiency of thermoelectric devices. Chapters are also devoted to transverse thermoelectric effects and thermionic energy conversion, both techniques offering the promise of important applications in the future.

Effect of ball milling time on thermoelectric properties of bismuth telluride nanomaterials

Science.gov (United States)

Khade, Poonam; Bagwaiya, Toshi; Bhattacharaya, Shovit; Singh, Ajay; Jha, Purushottam; Shelke, Vilas

2018-04-01

The effect of different milling time on thermoelectric properties of bismuth telluride (Bi2Te3) was investigated. The nanomaterial was prepared by varying the ball milling time and followed by hot press sintering. The crystal structure and phase formation were verified by X-ray diffraction and Raman Spectroscopy. The experimental results show that electrical conductivity increases whereas thermal conductivity decreases with increasing milling time. The negative sign of seebeck coefficient indicate the n-type nature with majority charge carriers of electrons. A maximum figure of merit about 0.55 is achieved for l5hr ball milled Bi2Te3 sample. The present study demonstrates the simple and cost-effective method for synthesis of Bi2Te3 thermoelectric material at large scale thermoelectric applications.

Thermoelectric nanomaterials materials design and applications

CERN Document Server

Koumoto, Kunihito

2014-01-01

Presently, there is an intense race throughout the world to develop good enough thermoelectric materials which can be used in wide scale applications. This book focuses comprehensively on very recent up-to-date breakthroughs in thermoelectrics utilizing nanomaterials and methods based in nanoscience. Importantly, it provides the readers with methodology and concepts utilizing atomic scale and nanoscale materials design (such as superlattice structuring, atomic network structuring and properties control, electron correlation design, low dimensionality, nanostructuring, etc.). Furthermore, also

Contrastive thermoelectric properties of strained SnSe crystals from the first-principles calculations

Science.gov (United States)

Tang, Yu; Cheng, Feng; Li, Decong; Deng, Shuping; Chen, Zhong; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Deng, Shukang

2018-06-01

SnSe is a promising thermoelectric material with a record high dimensionless figure of merit ZT at high temperature ∼923 K. However, the ZT values for low-Temperature Pnma phase SnSe are just 0.1-0.9. Here, we use First-principle combine with Boltzmann transport theory methods to study the effect of tensile and compressible strain on the thermoelectric transport properties. The power factor of SnSe with -4% strain have a large boost along b and c directions of 7.7 and 3.9 μW cm-1 K-2, respectively, which are 2.5 and 2 times as large as those pristine SnSe. The charge density distributions reveal that the overlap of wave function has significant change due to the changed bond lengths and bond angles under different strain, which lead to the change of band gap and band dispersion. Our work provides a new effective strategy to enhance the thermoelectric properties of materials.

Thermoelectric properties of non-stoichiometric lanthanum sulfides

International Nuclear Information System (INIS)

Shapiro, E.; Danielson, L.R.

1983-01-01

The lanthanum sulfides are promising candidate materials for high-efficiency thermoelectric applications at temperatures up to 1300 0 C. The nonstoichiometric lanthanum sulfides (LaS /SUB x/ , where 1.33 2 //rho/ can be chosen. The thermal conductivity remains approximately constant with stoichiometry, so a material with an optimum value of α 2 //rho/ should possess the optimum figure-of-merit. Data for the Seebeck coefficient and electrical resistivity of non-stoichiometric lanthanum sulfides is presented, together with structural properties of these materials

Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

International Nuclear Information System (INIS)

Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

2014-01-01

Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

In-situ thermoelectric temperature monitoring and "Closed-loop integrated control" system for concentrator photovoltaic-thermoelectric hybrid receivers

Science.gov (United States)

Rolley, Matthew H.; Sweet, Tracy K. N.; Min, Gao

2017-09-01

This work demonstrates a new technique that capitalizes on the inherent flexibility of the thermoelectric module to provide a multifunctional platform, and exhibits a unique advantage only available within CPV-TE hybrid architectures. This system is the first to use the thermoelectric itself for hot-side temperature feedback to a PID control system, needing no additional thermocouple or thermistor to be attached to the cell - eliminating shading, and complex mechanical designs for mounting. Temperature measurement accuracy and thermoelectric active cooling functionality is preserved. Dynamic "per-cell" condition monitoring and protection is feasible using this technique, with direct cell-specific temperature measurement accurate to 1°C demonstrated over the entire experimental range. The extrapolation accuracy potential of the technique was also evaluated.

Thermoelectric properties of currently available Au/Pt thermocouples related to the valid reference function

Directory of Open Access Journals (Sweden)

Edler F.

2015-01-01

Full Text Available Au/Pt thermocouples are considered to be an alternative to High Temperature Standard Platinum Resistance Thermometers (HTSPRTs for realizing temperatures according to the International Temperature Scale of 1990 (ITS-90 in the temperature range between aluminium (660.323 °C and silver (961.78 °C. The original aim of this work was to develop and to validate a new reference function for Au/Pt thermocouples which reflects the properties of presently commercially available Au and Pt wires. The thermoelectric properties of 16 Au/Pt thermocouples constructed at different National Metrological Institutes by using wires from different suppliers and 4 commercially available Au/Pt thermocouples were investigated. Most of them exhibit significant deviations from the current reference function of Au/Pt thermocouples caused by the poor performance of the Au-wires available. Thermoelectric homogeneity was investigated by measuring immersion profiles during freezes at the freezing point of silver and in liquid baths. The thermoelectric inhomogeneities were found to be one order of magnitude larger than those of Au/Pt thermocouples of the Standard Reference Material® (SRM® 1749. The improvement of the annealing procedure of the gold wires is a key process to achieve thermoelectric homogeneities in the order of only about (2–3 mK, sufficient to replace the impracticable HTSPRTs as interpolation instruments of the ITS-90. Comparison measurements of some of the Au/Pt thermocouples against a HTSPRT and an absolutely calibrated radiation thermometer were performed and exhibit agreements within the expanded measurement uncertainties. It has been found that the current reference function of Au/Pt thermocouples reflects adequately the thermoelectric properties of currently available Au/Pt thermocouples.

Thermoelectric transport properties of BaBiTe{sub 3}-based materials

Energy Technology Data Exchange (ETDEWEB)

Zhou, Yiming; Zhao, Li-Dong, E-mail: zhaolidong@buaa.edu.cn

2017-05-15

BaBiTe{sub 3}, a material with low thermal conductivity, is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. We choose two types of dopants, K and La, trying to optimize its electrical transport properties. The minority carriers, which harm the Seebeck coefficient in this system, are suppressed by La doping. With the increase of both electrical conductivity and Seebeck coefficient, the power factor of 3% La doped BaBiTe{sub 3} reaches 3.7 μW cm{sup −1} K{sup −2} which increased by 40% from undoped BaBiTe{sub 3}. Besides high power factor, the thermal conductivity is also reduced in it. Eventually, a high ZT value, 0.25 at 473 K, for n-type BaBiTe{sub 3} is achieved in 3% La doped BaBiTe{sub 3}. - Graphical abstract: BaBiTe{sub 3} possesses a low thermal conductivity. However, it is an inferior thermoelectric material due to the poor electrical properties originated from its narrow band gap. A high ZT value of 0.25 at 473 K for n-type BaBiTe{sub 3} can be achieved through optimizing electrical transport properties via La doping. - Highlights: • BaBiTe{sub 3} is an analogue of these promising thermoelectric materials: such as CsBi{sub 4}Te{sub 6} and K{sub 2}Bi{sub 8}Se{sub 13}, etc. • BaBiTe{sub 3} possesses a low thermal conductivity. • La is an effective dopant to enhance electrical transport properties. • A high ZT value of 0.25 at 473 K can be achieved in n-type La-doped BaBiTe{sub 3}.

Investigation of electronic, magnetic and thermoelectric properties of Zr{sub 2}NiZ (Z = Al,Ga) ferromagnets

Energy Technology Data Exchange (ETDEWEB)

Yousuf, Saleem, E-mail: nengroosaleem17@gmail.com; Gupta, Dinesh C., E-mail: sosfizix@gmail.com

2017-05-01

Systematic investigation of impact of electronic structure and magnetism, on the thermoelectric properties of new Zr{sub 2}NiZ (Z = Al, Ga) Heusler alloys are determined using density functional theory calculations. Half-metallicity with ferromagnetic character is supported by their 100% spin polarizations at the Fermi level. Magnetic moment of ∼3 μ{sub B} is according to the Slater-Puling rule, enables their practical applications. Electron density plots are used to analyse the nature of bonding and chemical composition. Boltzmann's theory is conveniently employed to investigate the thermoelectric properties of these compounds. The analysis of the thermal transport properties specifies the Seebeck coefficient as 25.6 μV/K and 18.6 μV/K at room temperature for Zr{sub 2}NiAl and Zr{sub 2}NiGa, respectively. The half-metallic nature with efficient thermoelectric coefficients suggests the likelihood of these materials to have application in designing spintronic devices and imminent thermoelectric materials. - Highlights: • The compounds are half-metallic ferromagnets. • 100% spin-polarized compounds for spintronics. • Increasing Seebeck coefficient over a wide temperature range. • Zr{sub 2}NiAl is efficient thermoelectric material than Zr{sub 2}NiGa.

Synthesis, Processing, and Thermoelectric Properties of Germanium-Antimony-Tellurium Based Compounds and Alloys

Science.gov (United States)

Williams, Jared Brett

Society has become increasingly more aware of the negative impacts which nonrenewable energy sources have on the environment, and therefore the search for new and more efficient means of energy production has become an important research endeavor. Thermoelectric modules possess the unique ability to convert wasted heat into useful electrical energy via solid state processes, which could vastly improve the efficiency of a number of applications. The materials which accomplish this are typically comprised of semiconductors which exhibit high electrical conductivity, Seebeck coefficient, and thermal resistivity. Together these properties give us a gauge for the overall efficiency of the thermal to electrical energy conversion. Phase change materials are a class of materials primarily used for optical data storage in CDs, DVDs, and Blu-Ray discs. Today's state of the art phase change materials are based on alloys of GeTe and Sb2Te3. These materials have also been found to exhibit high thermoelectric efficiencies. These high efficiencies stem from their complex crystal structure and degenerate semiconducting nature. The purpose of this work was to study and engineer the thermoelectric properties of various alloys and compounds which belong to this family of materials. Specifically studied were the compounds Ge4SbTe5 and Ge17Sb2Te20. In each case various synthesis and processing strategies were implemented to increase the thermoelectric performance and better understand the fundamental electrical and thermal properties. Finally various proposals for future work on these materials are presented, all of which are based on the findings described herein.

Electrical and thermoelectric properties of different compositions of Ge–Se–In thin films

Energy Technology Data Exchange (ETDEWEB)

Aly, K.A., E-mail: kamalaly2001@gmail.com [Physics Department, Faculty of Science and Arts Khulais, University of Jeddah (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut (Egypt); Dahshan, A., E-mail: adahshan73@gmail.com [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt); Department of Physics, Faculty of Science for Girls, King Khalid University, Abha (Saudi Arabia); Abbady, Gh. [Department of Physics, Faculty of Science, Assuit University, Assuit (Egypt); Saddeek, Y. [Physics Department, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut (Egypt)

2016-09-15

The effect of temperature in the range of 300–450 K and the indium content on the electrical and thermoelectric properties of Ge{sub 20}Se{sub 80−x}In{sub x} (0.0≤x≤24 at%) chalcogenide glassy thin films have been studied. From dc electrical and thermoelectric measurements, it was observed that the activation energies for electrical conductivity (ΔE) and for thermoelectric (ΔE{sub s}) decrease while the conductivity (σ) and Seebeck coefficient (S) increase upon introducing In into the Ge–Se glasses. In contrast to the behavior obtained with Bi or Pb doping, In incorporated in Ge–Se does not lead to a p-to n-type conduction inversion. The power factor (P) which is strongly depends on both of the Seebeck coefficient and the electrical conductivity. According to the obtained results, the Ge{sub 20}Se{sub 80−x}In{sub x} films can be considered potential candidates for incurring high action thermoelectric materials.

Colligative thermoelectric transport properties in n-type filled CoSb{sub 3} determined by guest electrons in a host lattice

Energy Technology Data Exchange (ETDEWEB)

Lim, Young Soo, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Department of Materials System Engineering, Pukyong National University, Busan 48547 (Korea, Republic of); Park, Kwan-Ho; Tak, Jang Yeul; Lee, Soonil; Seo, Won-Seon, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology (KICET), Jinju 52851 (Korea, Republic of); Park, Cheol-Hee, E-mail: yslim@pknu.ac.kr, E-mail: wsseo@kicet.re.kr, E-mail: pmoka@lgchem.com; Kim, Tae Hoon; Park, PumSuk [LG Chem/Research Park, Daejeon 34122 (Korea, Republic of); Kim, Il-Ho [Department of Materials Science and Engineering, Korea National University of Transportation, Chungju 27909 (Korea, Republic of); Yang, Jihui [Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195 (United States)

2016-03-21

Among many kinds of thermoelectric materials, CoSb{sub 3} has received exceptional attention for automotive waste heat recovery. Its cage structure provides an ideal framework for the realization of phonon-glass electron-crystal strategy, and there have been numerous reports on the enhanced thermoelectric performance through the independent control of the thermal and electrical conductivity by introducing fillers into its cage sites. Herein, we report colligative thermoelectric transport properties in n-type CoSb{sub 3} from the viewpoint of “guest electrons in a host lattice.” Both the Seebeck coefficient and the charge transport properties are fundamentally determined by the concentration of the guest electrons, which are mostly donated by the fillers, in the conduction band of the host CoSb{sub 3}. Comparing this observation to our previous results, colligative relations for both the Seebeck coefficient and the mobility were deduced as functions of the carrier concentration, and thermoelectric transport constants were defined to predict the power factor in filled CoSb{sub 3}. This discovery not only increases the degree of freedom for choosing a filler but also provides the predictability of power factor in designing and engineering the n-type filled CoSb{sub 3} materials.

Proposal for a phase-coherent thermoelectric transistor

International Nuclear Information System (INIS)

Giazotto, F.; Robinson, J. W. A.; Moodera, J. S.; Bergeret, F. S.

2014-01-01

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit

Proposal for a phase-coherent thermoelectric transistor

Energy Technology Data Exchange (ETDEWEB)

Giazotto, F., E-mail: giazotto@sns.it [NEST, Instituto Nanoscienze-CNR and Scuola Normale Superiore, I-56127 Pisa (Italy); Robinson, J. W. A., E-mail: jjr33@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moodera, J. S. [Department of Physics and Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bergeret, F. S., E-mail: sebastian-bergeret@ehu.es [Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 4, E-20018 San Sebastián (Spain); Donostia International Physics Center (DIPC), Manuel de Lardizabal 5, E-20018 San Sebastián (Spain)

2014-08-11

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

Effect of high fluence neutron irradiation on transport properties of thermoelectrics

Science.gov (United States)

Wang, H.; Leonard, K. J.

2017-07-01

Thermoelectric materials were subjected to high fluence neutron irradiation in order to understand the effect of radiation damage on transport properties. This study is relevant to the NASA Radioisotope Thermoelectric Generator (RTG) program in which thermoelectric elements are exposed to radiation over a long period of time in space missions. Selected n-type and p-type bismuth telluride materials were irradiated at the High Flux Isotope Reactor with a neutron fluence of 1.3 × 1018 n/cm2 (E > 0.1 MeV). The increase in the Seebeck coefficient in the n-type material was partially off-set by an increase in electrical resistivity, making the power factor higher at lower temperatures. For the p-type materials, although the Seebeck coefficient was not affected by irradiation, electrical resistivity decreased slightly. The figure of merit, zT, showed a clear drop in the 300-400 K range for the p-type material and an increase for the n-type material. Considering that the p-type and n-type materials are connected in series in a module, the overall irradiation damages at the device level were limited. These results, at neutron fluences exceeding a typical space mission, are significant to ensure that the radiation damage to thermoelectrics does not affect the performance of RTGs.

High-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution

Directory of Open Access Journals (Sweden)

J.-B. Vaney

2016-10-01

Full Text Available Bi2Te3-based compounds are a well-known class of outstanding thermoelectric materials. β-As2Te3, another member of this family, exhibits promising thermoelectric properties around 400 K when appropriately doped. Herein, we investigate the high-temperature thermoelectric properties of the β-As2−xBixTe3 solid solution. Powder X-ray diffraction and scanning electron microscopy experiments showed that a solid solution only exists up to x = 0.035. We found that substituting Bi for As has a beneficial influence on the thermopower, which, combined with extremely low thermal conductivity values, results in a maximum ZT value of 0.7 at 423 K for x = 0.017 perpendicular to the pressing direction.

Thermoelectric properties of PbSe₀.₅Te₀.₅: x (PbI₂) with endotaxial nanostructures: a promising n-type thermoelectric material.

Science.gov (United States)

Rawat, P K; Paul, B; Banerji, P

2013-05-31

In the present investigation, we report on the thermoelectric properties of PbSe₀.₅Te₀.₅: x (PbI₂) from room temperature to 625 K. High-resolution transmission electron micrographs of the samples reveal endotaxial nanostructures embedded in a PbSe₀.₅Te₀.₅ matrix. The combined effect of mass fluctuation and nanostructures reduces the thermal conductivity to a great extent compared to PbTe and PbSe, without affecting the carrier mobility. As a result, a thermoelectric figure of merit with a value of 1.5 is achieved at 625 K. This value is significantly higher than that of the available state-of-the-art n-type materials.

The Effects of Doping and Processing on the Thermoelectric Properties of Platinum Diantimonide Based Materials for Cryogenic Peltier Cooling Applications

Science.gov (United States)

Waldrop, Spencer Laine

The study of thermoelectrics is nearly two centuries old. In that time a large number of applications have been discovered for these materials which are capable of transforming thermal energy into electricity or using electrical work to create a thermal gradient. Current use of thermoelectric materials is in very niche applications with contemporary focus being upon their capability to recover waste heat. A relatively undeveloped region for thermoelectric application is focused upon Peltier cooling at low temperatures. Materials based on bismuth telluride semiconductors have been the gold standard for close to room temperature applications for over sixty years. For applications below room temperature, semiconductors based on bismuth antimony reign supreme with few other possible materials. The cause of this diculty in developing new, higher performing materials is due to the interplay of the thermoelectric properties of these materials. The Seebeck coecient, which characterizes the phenomenon of the conversion of heat to electricity, the electrical conductivity, and the thermal conductivity are all interconnected properties of a material which must be optimized to generate a high performance thermoelectric material. While for above room temperature applications many advancements have been made in the creation of highly ecient thermoelectric materials, the below room temperature regime has been stymied by ill-suited properties, low operating temperatures, and a lack of research. The focus of this work has been to investigate and optimize the thermoelectric properties of platinum diantimonide, PtSb2, a nearly zero gap semiconductor. The electronic properties of PtSb2 are very favorable for cryogenic Peltier applications, as it exhibits good conductivity and large Seebeck coecient below 200 K. It is shown that both n- and p-type doping may be applied to this compound to further improve its electronic properties. Through both solid solution formation and processing

Thermoelectricity for future sustainable energy technologies

Directory of Open Access Journals (Sweden)

Weidenkaff Anke

2017-01-01

Full Text Available Thermoelectricity is a general term for a number of effects describing the direct interconversion of heat and electricity. Thermoelectric devices are therefore promising, environmental-friendly alternatives to conventional power generators or cooling units. Since the mid-90s, research on thermoelectric properties and their applications has steadily increased. In the course of years, the development of high-temperature resistant TE materials and devices has emerged as one of the main areas of interest focusing both on basic research and practical applications. A wide range of innovative and cost-efficient material classes has been studied and their properties improved. This has also led to advances in synthesis and metrology. The paper starts out with thermoelectric history, basic effects underlying thermoelectric conversion and selected examples of application. The main part focuses on thermoelectric materials including an outline of the design rules, a review on the most common materials and the feasibility of improved future high-temperature thermoelectric converters.

Thermoelectric properties of bismuth antimony tellurium thin films through bilayer annealing prepared by ion beam sputtering deposition

Energy Technology Data Exchange (ETDEWEB)

Zheng, Zhuang-hao [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Fan, Ping, E-mail: fanping308@126.com [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Luo, Jing-ting [College of Physics Science and Technology, Shenzhen University, 518060 (China); Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China); Cai, Xing-min; Liang, Guang-xing; Zhang, Dong-ping [College of Physics Science and Technology, Shenzhen University, 518060 (China); Ye, Fan [Shenzhen Key Laboratory of Sensor Technology, Shenzhen 518060 (China)

2014-07-01

Bismuth antimony tellurium is one of the most important tellurium-based materials for high-efficient thermoelectric application. In this paper, ion beam sputtering was used to deposit Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films on borosilicate substrates at room-temperature. Then the bismuth antimony tellurium thin films were synthesized via post thermal treatment of the Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} bilayer thin films. The effect of annealing temperature and compositions on the thermoelectric properties of the thin films was investigated. After the thin films were annealed from 150 °C to 350 °C for 1 h in the high vacuum condition, the Seebeck coefficient changed from a negative sign to a positive sign. The X-ray diffraction results showed that the synthesized tellurium-based thermoelectric thin film exhibited various alloys phases, which contributed different thermoelectricity conductivity to the synthesized thin film. The overall Seebeck coefficient of the synthesized thin film changed from negative sign to positive sign, which was due to the change of the primary phase of the tellurium-based materials at different annealing conditions. Similarly, the thermoelectric properties of the films were also associated with the grown phase. High-quality thin film with the Seebeck coefficient of 240 μV K{sup −1} and the power factor of 2.67 × 10{sup −3} Wm{sup −1} K{sup −2} showed a single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase when the Sb/Te thin film sputtering time was 40 min. - Highlights: • Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} thermoelectric thin films synthesized via bilayer annealing • The film has single Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} phase with best thermoelectric performance. • The film has high thermoelectric properties comparable with other best results.

Thermoelectric properties and nanostructures of materials prepared from rice husk ash

Energy Technology Data Exchange (ETDEWEB)

Pukird, S.; Tipparach, U.; Kasian, P. [Ubon Ratchathani Univ., Ubon Ratchathani (Thailand). Dept. of Physics; Limsuwan, P. [King Mongkut' s Univ. of Technology Thonburi, Bangkok (Thailand). Dept. of Physics

2009-07-01

Thailand produces large amounts of agricultural residues such as rice husk and coconut shells. Rice husk is considered to be a potential source for solar grade silicon. Studies have shown that reasonably pure polycrystalline silicon can be prepared from rice husk white ash by a metallothermic reduction process. This paper reported on a study that investigated the thermoelectric properties of ceramic material prepared by mixing silica from rice husk ash and carbon obtained from coconut shell charcoal. The thermoelectric properties of the materials were examined along with their microstructures. The materials were made from burning rice husk ash and coconut shell at different temperatures and then doped with metal oxides. Pellets were heated at temperature of 700 degrees C for 1-3 hours. The voltage on both sides of the pellets was observed. The electromotive force was found when different temperatures were applied on both sides of the pellet specimens. The Seebeck coefficient was then calculated. The results showed that these materials can be used as thermoelectric devices. Scanning electron microscope (SEM) and energy dispersive X-rays (EDX) were used to investigate the source of materials and the products on the substrates. The images of SEM and EDX showed nanostructures of materials such as nanowires, nanorods and nanoparticles of the products and sources. 22 refs., 2 tabs., 9 figs.

Thermoelectric properties of IV–VI-based heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

2015-07-15

Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV�

Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

KAUST Repository

Abutaha, Anas I.

2015-11-24

As the world strives to adapt to the increasing demand for electrical power, sustainable energy sources are attracting significant interest. Around 60% of energy utilized in the world is wasted as heat. Different industrial processes, home heating, and exhausts in cars, all generate a huge amount of unused waste heat. With such a huge potential, there is also significant interest in discovering inexpensive technologies for power generation from waste heat. As a result, thermoelectric materials have become important for many renewable energy research programs. While significant advancements have been done in improving the thermoelectric properties of the conventional heavy-element based materials (such as Bi2Te3 and PbTe), high-temperature applications of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate athigher temperatures and in harsher environments compared to non-oxide thermoelectrics. Furthermore, oxides are abundant and friendly to the environment. Among oxides, crystalline SrTiO3 and ZnO are promising thermoelectric materials. The main objective of this work is therefore to pursue focused investigations of SrTiO3 and ZnO thin films and superlattices grown by pulsed laser deposition (PLD), with the goal of optimizing their thermoelectric properties by following different strategies. First, the effect of laser fluence on the thermoelectric properties of La doped epitaxial SrTiO3 films is discussed. Films grown at higher laser fluences exhibit better thermoelectric performance. Second, the role of crystal orientation in determining the thermoelectric properties of epitaxial Al doped ZnO (AZO) films is explained. Vertically aligned (c-axis) AZO films have superior thermoelectric properties compared to other films with different crystal orientations. Third

Fabrication and thermoelectric properties of highly textured NaCo2O4 ceramic

International Nuclear Information System (INIS)

Cheng Jinguang; Sui Yu; Fu Haijin; Lu Zhe; Wei Bo; Qian Zhengnan; Miao Jipeng; Liu Zhiguo; Huang Xiqiang; Zhu Ruibin; Wang Xianjie; Su Wenhui

2006-01-01

Highly textured NaCo 2 O 4 polycrystalline sample was fabricated by means of the cold high-pressure compacting followed by the solid-state reaction. X-ray diffraction and scanning electron microscope were employed to show that the plate-like grains within the sample are aligned along the pressing direction. The resistivity ρ and thermoelectric power S along the preferred {0 0 1} plane were measured in the whole temperature range from 15 to 973 K in air and the correlation between thermoelectric properties and texture was investigated. It was found that both ρ and S exhibit metallic behavior in the whole temperature range and the above sample exhibits lower ρ and higher S due to high texture and density. The power factor exhibits a steep rise above 400 K and reaches 761 μW m -1 K -2 at 973 K, suggesting a promising candidate for thermoelectric application at higher temperature. The change of slope in both resistivity and thermoelectric power curves at about 450 K might arise from the spin-state transition of Co ions in the CoO 2 blocks

Effect of doping of N and B atoms on thermoelectric properties of ...

Indian Academy of Sciences (India)

In this work, the doping effect on the thermoelectric properties of the C60 molecule ... mopower and thermal conductance of atomic sized metallic contacts, 1D wires, single ..... For negative energies, the sign of thermopower is positive while.

Electronic structure and high thermoelectric properties of a new material Ba{sub 3}Cu{sub 20}Te{sub 13}

Energy Technology Data Exchange (ETDEWEB)

Yang, Gui, E-mail: kuiziyang@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang, Henan, 455000 (China); Wu, Jinghe [Department of Physics and Electronic Engineering, Henan Institute of Education, Zhengzhou, 450046 (China); Zhang, Jing; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang, Henan, 455000 (China)

2016-09-05

The electronic structure and high thermoelectric properties of Ba{sub 3}Cu{sub 20}Te{sub 13} are studied using first principles calculations and the semiclassical Boltzmann theory. The coexistence of ionic and covalent bonding in Ba{sub 3}Cu{sub 20}Te{sub 13} indicates that it is a Zintl phase compound. The calculated band structure shows that the compound is a semiconductor with an indirect band gap ∼0.45 eV, which is an appropriate band for the high thermoelectric performance. The transport calculations based on the electronic structure indicate that it exhibits relatively large Seebeck coefficients, high electrical conductivities, and high power factor. For Ba{sub 3}Cu{sub 20}Te{sub 13}, the n-type doping may achieve a higher thermoelectric performance than that of p-type doping. It is worth noting that the thermoelectric parameters of Ba{sub 3}Cu{sub 20}Te{sub 13} are comparable or larger than that of Ca{sub 5}Al{sub 2}Sb{sub 6}, a typical Zintl compound representative with high thermoelectric performance. - Highlights: • The electronic structure and thermoelectric(TE) properties are firstly studied. • The heavy and light bands near the Fermi level benefit TE properties. • The comparison indicates Ba{sub 3}Cu{sub 20}Te{sub 13} is a potential high TE material.

NANOSTRUCTURING AS A WAY FOR THERMOELECTRIC EFFICIENCY IMPROVEMENT

Directory of Open Access Journals (Sweden)

L. V. Bochkov

2014-07-01

Full Text Available The urgency of thermoelectric energy conversion is proved. Perspectives of nanostructures usage as thermoelectric materials are shown. The authors have systematized and generalized the methods and investigation results of bulk nanostructure thermoelectrics based on Bi-Sb-Te solid solutions. Ways of nanoparticles fabrication and their subsequent sintering into a bulk sample, results of structure study of the received materials are shown by methods of electronic microscopy and X-ray spectroscopy, results of mechanical properties investigation. Methods of manufacturing suggested with the authors’ participation and properties of thermoelectric nanocomposites, fabricated with addition of fullerene, thermally split graphite, graphene and molybdenum disulphide are discussed. Methods for prevention of recrystallization, measurement methods of thermoelectric properties of studied nanothermoelectrics are considered, including electric and thermal conductivities, thermoemf and the figure of merit. Factors that influence on thermoelectric figure of merit, including the tunneling of carriers through interfaces between nanograins, the additional phonon scattering on nanograin borders and the energy filtration of carriers through barriers have been theoretically investigated. Mechanisms and ways for improvement of the figure of merit are determined. Experimental confirmation for thermoelectric figure of merit increase is received. Physical mechanisms of thermoelectric figure of merit increase are shown by perceptivity of nanostructures utilization. The growth of thermoelectric figure of merit means an expansion of areas for rational application of thermoelectric energy generation and thermoelectric cooling.

Mechanical properties of BixSb2−xTe3 nanostructured thermoelectric material

International Nuclear Information System (INIS)

Li, G; Gadelrab, K R; Souier, T; Chiesa, M; Potapov, P L; Chen, G

2012-01-01

Research on thermoelectric (TE) materials has been focused on their transport properties in order to maximize their overall performance. Mechanical properties, which are crucial for system reliability, are often overlooked. The recent development of a new class of high-performance, low-dimension thermoelectric materials calls for a better understanding of their mechanical behavior to achieve the desired system reliability. In the present study we investigate the mechanical behavior of nanostructure bulk TE material p-type Bi x Sb 2−x Te 3 by means of nanoindentation and 3D finite element analysis. The Young’s modulus of the material was estimated by the Oliver–Pharr (OP) method and by means of numerically assisted nanoindentation analysis yielding comparable values about 40 GPa. Enhanced hardness and yield strength can be predicted for this nanostructured material. Microstructure is studied and correlation with mechanical properties is discussed. (paper)

Thermoelectric Properties of the Yttrium-Doped Ceramic Oxide SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Khan, Tamal Tahsin; Ur, Soon-Chul [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-01-15

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO{sub 3} at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO{sub 3}. The doping level in SrTiO{sub 3} was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO{sub 3} provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Effect of local atomic and electronic structures on thermoelectric properties of chemically substituted CoSi

Science.gov (United States)

Hsu, C. C.; Pao, C. W.; Chen, J. L.; Chen, C. L.; Dong, C. L.; Liu, Y. S.; Lee, J. F.; Chan, T. S.; Chang, C. L.; Kuo, Y. K.; Lue, C. S.

2014-05-01

We report the effects of Ge partial substitution for Si on local atomic and electronic structures of thermoelectric materials in binary compound cobalt monosilicides (\\text{CoSi}_{1-x}\\text{Ge}_{x}\\text{:}\\ 0 \\le x \\le 0.15 ). Correlations between local atomic/electronic structure and thermoelectric properties are investigated by means of X-ray absorption spectroscopy. The spectroscopic results indicate that as Ge is partially substituted onto Si sites at x \\le 0.05 , Co in CoSi1-xGex gains a certain amount of charge in its 3d orbitals. Contrarily, upon further replacing Si with Ge at x \\ge 0.05 , the Co 3d orbitals start to lose some of their charge. Notably, thermopower is strongly correlated with charge redistribution in the Co 3d orbital, and the observed charge transfer between Ge and Co is responsible for the variation of Co 3d occupancy number. In addition to Seebeck coefficient, which can be modified by tailoring the Co 3d states, local lattice disorder may also be beneficial in enhancing the thermoelectric properties. Extended X-ray absorption fine structure spectrum results further demonstrate that the lattice phonons can be enhanced by Ge doping, which results in the formation of the disordered Co-Co pair. Improvements in the thermoelectric properties are interpreted based on the variation of local atomic and electronic structure induced by lattice distortion through chemical substitution.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

KAUST Repository

Sarath Kumar, S. R.

2012-02-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

KAUST Repository

Sarath Kumar, S. R.; Abutaha, Anas I.; Hedhili, Mohamed N.; Alshareef, Husam N.

2012-01-01

The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.

Structural stability, dynamical stability, thermoelectric properties, and elastic properties of GeTe at high pressure

Science.gov (United States)

Kagdada, Hardik L.; Jha, Prafulla K.; Śpiewak, Piotr; Kurzydłowski, Krzysztof J.

2018-04-01

The stability of GeTe in rhombohedral (R 3 m ), face centred cubic (F m 3 m ), and simple cubic (P m 3 m ) phases has been studied using density functional perturbation theory. The rhombohedral phase of GeTe is dynamically stable at 0 GPa, while F m 3 m and P m 3 m phases are stable at 3.1 and 33 GPa, respectively. The pressure-dependent phonon modes are observed in F m 3 m and P m 3 m phases at Γ and M points, respectively. The electronic and the thermoelectric properties have been investigated for the stable phases of GeTe. The electronic band gap for rhombohedral and F m 3 m phases of GeTe has been observed as 0.66 and 0.17 eV, respectively, while the P m 3 m phase shows metallic behavior. We have used the Boltzmann transport equation under a rigid band approximation and constant relaxation time approximation as implemented in boltztrap code for the calculation of thermoelectric properties of GeTe. The metallic behavior of P m 3 m phase gives a very low value of Seebeck coefficient compared to the other two phases as a function of temperature and the chemical potential μ. It is observed that the rhombohedral phase of GeTe exhibits higher thermoelectric performance. Due to the metallic nature of P m 3 m phase, negligible thermoelectric performance is observed compared to R 3 m and F m 3 m -GeTe. The calculated lattice thermal conductivities are low for F m 3 m -GeTe and high for R 3 m -GeTe. At the relatively higher temperature of 1350 K, the figure of merit ZT is found to be 0.7 for rhombohedral GeTe. The elastic constants satisfy the Born stability criteria for all three phases. The rhombohedral and F m 3 m phases exhibits brittleness and the P m 3 m phase shows ductile nature.

Thermoelectric properties by high temperature annealing

Science.gov (United States)

Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

2009-01-01

The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

Temperature-dependent thermal and thermoelectric properties of n -type and p -type S c1 -xM gxN

Science.gov (United States)

Saha, Bivas; Perez-Taborda, Jaime Andres; Bahk, Je-Hyeong; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Sands, Timothy D.

2018-02-01

Scandium Nitride (ScN) is an emerging rocksalt semiconductor with octahedral coordination and an indirect bandgap. ScN has attracted significant attention in recent years for its potential thermoelectric applications, as a component material in epitaxial metal/semiconductor superlattices, and as a substrate for defect-free GaN growth. Sputter-deposited ScN thin films are highly degenerate n -type semiconductors and exhibit a large thermoelectric power factor of ˜3.5 ×10-3W /m -K2 at 600-800 K. Since practical thermoelectric devices require both n- and p-type materials with high thermoelectric figures-of-merit, development and demonstration of highly efficient p-type ScN is extremely important. Recently, the authors have demonstrated p-type S c1 -xM gxN thin film alloys with low M gxNy mole-fractions within the ScN matrix. In this article, we demonstrate temperature dependent thermal and thermoelectric transport properties, including large thermoelectric power factors in both n- and p-type S c1 -xM gxN thin film alloys at high temperatures (up to 850 K). Employing a combination of temperature-dependent Seebeck coefficient, electrical conductivity, and thermal conductivity measurements, as well as detailed Boltzmann transport-based modeling analyses of the transport properties, we demonstrate that p-type S c1 -xM gxN thin film alloys exhibit a maximum thermoelectric power factor of ˜0.8 ×10-3W /m -K2 at 850 K. The thermoelectric properties are tunable by adjusting the M gxNy mole-fraction inside the ScN matrix, thereby shifting the Fermi energy in the alloy films from inside the conduction band in case of undoped n -type ScN to inside the valence band in highly hole-doped p -type S c1 -xM gxN thin film alloys. The thermal conductivities of both the n- and p-type films were found to be undesirably large for thermoelectric applications. Thus, future work should address strategies to reduce the thermal conductivity of S c1 -xM gxN thin-film alloys, without affecting

Thermoelectrical properties of the compounds ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt)

Energy Technology Data Exchange (ETDEWEB)

Oestreich, J; Probst, U; Richardt, F; Bucher, E [University of Konstanz, PO Box X916, D-78457 Konstanz (Germany)

2003-02-05

The research into new materials with good thermoelectric properties has revealed new compounds consisting of metallic elements (Bando Y, Suemitsu T, Takagi K, Tokushima H, Echizen Y, Katoh K, Umeo K, Maeda Y and Takabatake T 2000 J. Alloys Compounds 313 1-6, Ghelani N, Loo S, Chung D, Sportouch S, Nardi S, Kanatzidis M, Hogan T and Nolas G 2000 Mater. Res. Soc. 626 Z8.6.1). The half-Heusler compound ZrNiSn, in particular, shows promising thermoelectric properties and has been studied by many scientists during recent years (Uher C, Hu S, Yang J, Meisner G P and Morelli D T 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 485-8, Romaka L P, Stadnyk Yu V, Goryn A M, Gorelenko Yu K and Skolozdra R V 1997 Proc. ICT'97: 16th Int. Conf. on Thermoelectrics pp 516-19, Hohl H, Ramirez A P, Goldmann C, Ernst G, Woelfing B and Bucher E 1998 J. Phys.: Condens. Matter 11 1697-709, Oestreich J, Kaefer W, Richardt F, Probst U and Bucher E 1999 Proc. 5th European Workshop on Thermoelectrics pp 192-5). In an effort to find new thermoelectric materials, the half-Heusler compounds of the groups ScM{sup VIII}Sb and YM{sup VIII}Sb (M{sup VIII} = Ni, Pd, Pt) were synthesized by arc melting and the thermoelectric properties were examined by standard characterization methods. Doping experiments showed that it is possible to change the electrical properties of the compounds while retaining the half-Heusler structure. Within the two groups, YPtSb showed the best thermoelectrical properties. At a temperature of 400 K the electrical conductivity of YPtSb is 748{omega}{sup -1} cm{sup -1} and the Seebeck coefficient is 116.3{mu}V K{sup -1}. The thermal conductivity at 400 K extrapolated using the Wiedemann-Franz law is 2.87 W K{sup -1} m{sup -1}. This leads to a dimensionless figure of merit of 0.14.

Enhancement of Thermoelectric Properties of PEDOT:PSS and Tellurium-PEDOT:PSS Hybrid Composites by Simple Chemical Treatment

Science.gov (United States)

Jin Bae, Eun; Hun Kang, Young; Jang, Kwang-Suk; Yun Cho, Song

2016-01-01

The thermoelectric properties of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and tellurium-PEDOT:PSS (Te-PEDOT:PSS) hybrid composites were enhanced via simple chemical treatment. The performance of thermoelectric materials is determined by their electrical conductivity, thermal conductivity, and Seebeck coefficient. Significant enhancement of the electrical conductivity of PEDOT:PSS and Te-PEDOT:PSS hybrid composites from 787.99 and 11.01 to 4839.92 and 334.68 S cm-1, respectively was achieved by simple chemical treatment with H2SO4. The power factor of the developed materials could be effectively tuned over a very wide range depending on the concentration of the H2SO4 solution used in the chemical treatment. The power factors of the developed thermoelectric materials were optimized to 51.85 and 284 μW m-1 K-2, respectively, which represent an increase of four orders of magnitude relative to the corresponding parameters of the untreated thermoelectric materials. Using the Te-PEDOT:PSS hybrid composites, a flexible thermoelectric generator that could be embedded in textiles was fabricated by a printing process. This thermoelectric array generates a thermoelectric voltage of 2 mV using human body heat.

Preparation and thermoelectric properties of RF co-sputtered CoSb{sub 3} skutteruddite thin films

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz [University of Science and Technology, Daejeon (Korea, Republic of); Han, Seungwoo [Korea Institute of Machinery and Materials, Daejeon (Korea, Republic of); University of Science and Technology, Daejeon (Korea, Republic of)

2014-11-15

Various skutterudites have been under investigation because of their potential application in thermoelectric materials and devices. These studies indicate that bulk materials with a skutterudite type structure show reasonable thermoelectric behaviors at elevated temperatures, which make them suitable for high-temperature thermoelectric applications. The results of thermoelectric-property measurements on skutterudite-phase CoSb{sub 3} thin films are presented in this study in order to extend the bulk material concept to micro-device applications by using thin film deposition technology. Thin films are deposited on oxidized silicon substrates by using the RF co-sputtering method. The film's composition is found to depend strongly on the deposition conditions. The temperature at which the deposited films transition from an amorphous state to a crystalline state has been reported to be about 153 .deg. C. Therefore, some experiments are performed with the substrate temperature kept at 200 .deg. C to obtain polycrystalline films. The crystal structure of the film is evaluated by using x-ray diffraction (XRD) measurements. Energy dispersive spectroscopy (EDS) is used to determine the film's composition whereas the surface morphology and the thickness are investigated and measured by using scanning electron microscopy (SEM). Finally, the thermoelectric properties, namely, the electrical resistivity and the Seebeck coefficient, are used to calculate the power factor of the deposited thin films and, their variations with temperature are measured. We report a maximum power factor of 0.41 mW/mK{sup 2} for the film deposited at a 200 .deg. C substrate temperature.

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Thermoelectric refrigerator having improved temperature stabilization means

International Nuclear Information System (INIS)

Falco, C.M.

1982-01-01

A control system for thermoelectric refrigerators is disclosed. The thermoelectric refrigerator includes at least one thermoelectric element that undergoes a first order change at a predetermined critical temperature. The element functions as a thermoelectric refrigerator element above the critical temperature, but discontinuously ceases to function as a thermoelectric refrigerator element below the critical temperature. One example of such an arrangement includes thermoelectric refrigerator elements which are superconductors. The transition temperature of one of the superconductor elements is selected as the temperature control point of the refrigerator. When the refrigerator attempts to cool below the point, the metals become superconductors losing their ability to perform as a thermoelectric refrigerator. An extremely accurate, first-order control is realized

Experimental Investigation of a Temperature-Controlled Car Seat Powered by an Exhaust Thermoelectric Generator

Science.gov (United States)

Du, H.; Wang, Y. P.; Yuan, X. H.; Deng, Y. D.; Su, C. Q.

2016-03-01

To improve the riding comfort and rational utilization of the electrical energy captured by an automotive thermoelectric generator (ATEG), a temperature-controlled car seat was constructed to adjust the temperature of the car seat surface. Powered by the ATEG and the battery, the seat-embedded air conditioner can improve the riding comfort using a thermoelectric device to adjust the surface temperature of the seat, with an air duct to regulate the cold side and hot side of the thermoelectric device. The performance of the thermoelectric cooler (TEC) and theoretical analysis on the optimum state of the TEC device are put forward. To verify the rationality of the air duct design and to ensure sufficient air supply, the velocity field of the air duct system was obtained by means of the finite element method. To validate the reliability of the numerical simulation, the air velocity around the thermoelectric device was measured by a wind speed transmitter. The performance of the temperature-controlled car seat has been validated and is in good agreement with bench tests and real vehicle tests.

Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

Energy Technology Data Exchange (ETDEWEB)

Narducci, Dario, E-mail: dario.narducci@unimib.it [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Selezneva, Ekaterina [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Cerofolini, Gianfranco [Department of Materials Science, University of Milano Bicocca, via Cozzi 53, 20125 Milano (Italy); Consorzio DeltaTi Research (Italy); Frabboni, Stefano; Ottaviani, Giampiero [Department of Physics, University of Modena and Reggio Emilia, via Campi 213, 41100 Modena (Italy)

2012-09-15

Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride. - Graphical abstract: In heavily doped semiconductors potential barriers may lead to both carrier energy filtering and localization. This may lead to an enhancement of the thermoelectric properties of the material, resulting in an unexpected increase of the power factor with the doping level. Highlights: Black-Right-Pointing-Pointer Potential barriers are shown to lead to carrier localization in thermoelectric materials. Black-Right-Pointing-Pointer Evidence is put forward of the formation of a mobility edge. Black-Right-Pointing-Pointer Energy filtering and localization may explain the enhancement of power factor in degenerate semiconductors.

X-ray photoelectron spectroscopy study and thermoelectric properties of Al-doped ZnO thin films

International Nuclear Information System (INIS)

Li Li; Fang Liang; Zhou Xianju; Liu Ziyi; Zhao Liang; Jiang Sha

2009-01-01

In this paper, high quality Al-doped ZnO (AZO) thin films were prepared by direct current (DC) reactive magnetron sputtering using a Zn target (99.99%) containing Al of 1.5 wt.%. The films obtained were characterized by X-ray photoelectron spectroscopy (XPS) and thermoelectric measurements. The XPS results reveal that Zn and Al exist only in oxidized state, while there are dominant crystal lattice and rare adsorbed oxygen for O in the annealed AZO thin films. The studies of thermoelectric property show a striking thermoelectric effect in the AZO thin films. On the one hand, the thermoelectromotive and magnetothermoelectromotive forces increase linearly with increasing temperature difference (ΔT). On the other hand, the thermoelectric power (TEP) decreases with the electrical resistance of the sample. But the TEP increases with the increase of temperature below 300 K, and it nearly does not change around room temperature. The experimental results also demonstrate that the annealing treatment increases TEP, while the external magnetic field degrades TEP.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N.

2013-01-01

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

KAUST Repository

Sarath Kumar, S. R.

2013-08-14

We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.

Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler Alloys

KAUST Repository

Gandi, Appala; Schwingenschlö gl, Udo

2017-01-01

We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address

Lead telluride with increased mechanical stability for cylindrical thermoelectric generators

International Nuclear Information System (INIS)

Schmitz, Andreas

2013-01-01

The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb 1-x Ca x Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric properties

First-principles study on doping and temperature dependence of thermoelectric property of Bi2S3 thermoelectric material

International Nuclear Information System (INIS)

Guo, Donglin; Hu, Chenguo; Zhang, Cuiling

2013-01-01

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi 2 S 3 depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value. ► By doping and temperature tuning, Bi 2 S 3 is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi 2 S 3 are investigated. The electron and hole effective mass of Bi 2 S 3 is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi 2 S 3 crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi 2 S 3 , the optimal doping concentration is found in the range of (1.0–5.0) × 10 19 cm −3 , in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant

Orientation control and thermoelectric properties of FeSb₂ films

DEFF Research Database (Denmark)

Sun, Ye; Zhang, Eryun; Johnsen, Simon

2010-01-01

FeSb2 has a high potential for technological applications due to its colossal thermoelectric power, giant carrier mobility and large magnetoresistance. Earlier, growth of lang1 0 1rang-textured FeSb2 films on quartz (0 0 0 1) substrates has been reported. Here magnetron sputtering is used to obtain...

Thermoelectric properties of P-type Sb2Te3 thick film processed by a screen-printing technique and a subsequent annealing process

International Nuclear Information System (INIS)

Kim, Sun Jin; We, Ju Hyung; Kim, Jin Sang; Kim, Gyung Soo; Cho, Byung Jin

2014-01-01

Highlights: • We report on thermoelectric properties of screen-printed Sb 2 Te 3 thick film. • Subsequent annealing process determines thermoelectric properties of Sb 2 Te 3 film. • Annealing in tellurium powder ambient contributes to tellurium-rich Sb 2 Te 3 film. • Annealing in tellurium powder ambient enhances carrier mobility of Sb 2 Te 3 film. -- Abstract: We herein report the thermoelectric properties of Sb 2 Te 3 thick film fabricated by a screen-printing technique and a subsequent annealing process. Each step of the screen-printing fabrication process of Sb 2 Te 3 thick film is described in detail. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of the screen-printed film. The results show that the annealing of the screen-printed Sb 2 Te 3 thick film together with tellurium powder in the same process chamber significantly improves the carrier mobility by increasing the average scattering time of the carrier in the film, resulting in a large improvement of the power factor. By optimizing the annealing process, we achieved a maximum thermoelectric figure-of-merit, ZT, of 0.32 at room temperature, which is slightly higher than that of bulk Sb 2 Te 3 . Because screen-printing is a simple and low-cost process and given that it is easy to scale up to large sizes, this result will be useful for the realization of large, film-type thermoelectric devices

Note: Wide-operating-range control for thermoelectric coolers

Science.gov (United States)

Peronio, P.; Labanca, I.; Ghioni, M.; Rech, I.

2017-11-01

A new algorithm for controlling the temperature of a thermoelectric cooler is proposed. Unlike a classic proportional-integral-derivative (PID) control, which computes the bias voltage from the temperature error, the proposed algorithm exploits the linear relation that exists between the cold side's temperature and the amount of heat that is removed per unit time. Since this control is based on an existing linear relation, it is insensitive to changes in the operating point that are instead crucial in classic PID control of a non-linear system.

Thermoelectric properties of atomically thin silicene and germanene nanostructures

Science.gov (United States)

Yang, K.; Cahangirov, S.; Cantarero, A.; Rubio, A.; D'Agosta, R.

2014-03-01

The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principles density functional techniques and linear response for the thermal and electrical transport. We have considered here the two-dimensional silicene and germanene, together with nanoribbons of different widths. For the nano ribbons, we have also investigated the possibility of nano structuring these systems by mixing silicon and germanium. We found that the figure of merit at room temperature of these systems is remarkably high, up to 2.5.

Enhanced thermoelectric properties of N-type polycrystalline In4Se3-x compounds via thermally induced Se deficiency

Science.gov (United States)

Zhao, Ran; Shu, Yu-Tian; Guo, Fu

2014-03-01

In4Se3-x compound is considered as a potential thermoelectric material due to its comparably low thermal conductivity among all existing ones. While most studies investigated In4Se3-x thermoelectric properties by controlling selennium or other dopants concentrations, in the current study, it was found that even for a fixed initial In/Se ratio, the resulting In/Se ratio varied significantly with different thermal processing histories (i.e., melting and annealing), which also resulted in varied thermoelectric properties as well as fracture surface morphologies of In4Se3-x polycrystalline specimens. Single phase polycrystalline In4Se3-x compounds were synthesized by combining a sequence of melting, annealing, pulverizing, and spark plasma sintering. The extension of previous thermal history was observed to significantly improve the electrical conductivity (about 121%) and figure of merit (about 53%) of In4Se3-x polycrystalline compounds. The extended thermal history resulted in the increase of Se deficiency (x) from 0.39 to 0.53. This thermally induced Se deficiency was observed to associate with increasing carrier mobility but decreasing concentration, which differs from the general trend observed for the initially adjusted Se deficiency at room temperature. Unusually large dispersed grains with nanosize layers were observed in specimens with the longest thermal history. The mechanism(s) by which previous thermal processing enhances carrier mobility and affect microstructural evolution are briefly discussed.

Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

Science.gov (United States)

Kim, Il-Ho

2018-05-01

Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

Impact of parasitic thermal effects on thermoelectric property measurements by Harman method

International Nuclear Information System (INIS)

Kwon, Beomjin; Baek, Seung-Hyub; Keun Kim, Seong; Kim, Jin-Sang

2014-01-01

Harman method is a rapid and simple technique to measure thermoelectric properties. However, its validity has been often questioned due to the over-simplified assumptions that this method relies on. Here, we quantitatively investigate the influence of the previously ignored parasitic thermal effects on the Harman method and develop a method to determine an intrinsic ZT. We expand the original Harman relation with three extra terms: heat losses via both the lead wires and radiation, and Joule heating within the sample. Based on the expanded Harman relation, we use differential measurement of the sample geometry to measure the intrinsic ZT. To separately evaluate the parasitic terms, the measured ZTs with systematically varied sample geometries and the lead wire types are fitted to the expanded relation. A huge discrepancy (∼28%) of the measured ZTs depending on the measurement configuration is observed. We are able to separately evaluate those parasitic terms. This work will help to evaluate the intrinsic thermoelectric property with Harman method by eliminating ambiguities coming from extrinsic effects

Magneto-electronic, thermal, and thermoelectric properties of some Co-based quaternary alloys

Science.gov (United States)

Bhat, Tahir Mohiuddin; Gupta, Dinesh C.

2018-01-01

In this study, quaternary Heusler alloys CoFeCrZ (Z = Si, As, Sb) were investigated based on the modified Becke-Johnson exchange potential. The electronic structures demonstrated that CoFeCrZ (Z = Si, As, Sb) alloys are completely spin polarized with indirect bandgap and has an integer magnetic moment according to the Slater-Pauling rule. Pugh's and Poisson's ratios showed that these materials are highly ductile with high melting temperatures. The thermal properties comprising the thermal expansion coefficient, heat capacity, and Grüneisen parameter were evaluated at various pressures from 0 to 20 GPa. The Grüneisen parameter values indicated the strong anharmonicity of the lattice vibrations that predominated in these compounds. We also studied the dependency of the thermoelectric transport properties on the temperature, i.e., the thermal conductivity and Seebeck coefficient. These alloys exhibited low lattice thermal conductivity and good Seebeck coefficients at room temperature. The half-metallic structures of these compounds with large band gaps and adequate Seebeck coefficients mean that they are suitable for use in spintronic and thermoelectric device applications.

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

Science.gov (United States)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Microstructure and thermoelectric properties of β-FeSi2 ceramics fabricated by hot-pressing and spark plasma sintering

International Nuclear Information System (INIS)

Qu Xiurong; Lue Shuchen; Hu Jianmin; Meng Qingyu

2011-01-01

Highlights: → With increasing hot-pressing (HP) temperature, the thermoelectric figure of merit of β-FeSi 2 ceramics is improved slightly. → The grain size of the sample sintered by the spark plasma sintering (SPS) process is smaller than that by the HP process. → The SPS sample shows excellent thermoelectric performance attributed to low thermal conductivity. - Abstract: The microstructure and thermoelectric properties of β-FeSi 2 ceramics by hot pressing (HP) and spark plasma sintering (SPS) are investigated. With increasing hot-pressing temperature, the density, electronic conductivity and thermal conductivity of the samples increase significantly, the thermoelectric figure of merit is improved slightly. The microstructure study indicates that the sizes of the β-FeSi 2 and ε-FeSi phases in the sample sintered by the SPS process are smaller than that by the HP process. The SPS sample shows excellent thermoelectric performance due to the low thermal conductivity.

Effects of Synthesis and Processing on the Thermoelectric Properties of Ca3Co4O9+δ

DEFF Research Database (Denmark)

Wu, NingYu; Holgate, Tim; Van Nong, Ngo

In the present study, Ca3Co4O9+δ was synthesized by solid-state and sol-gel reactions followed by spark plasma sintering (SPS) under different conditions such as sintering temperatures, applied pressures and ramping rates. The materials were then characterized with respect to their microstructure......, phase purity and thermoelectric properties. With the identical optimal SPS process, the power factor of about 400 µW/m•K2 and 465 µW/m•K2 (at 800 °C) is measured from samples produced by solid-state and sol-gel reactions respectively, both of these values are higher than the value reported so far....... The thermoelectric performance improvement observed for the solid-state and sol-gel reactions suggests that the particle sizes may be a predominant key parameter of the Ca3Co4O9+δ thermoelectric properties. Smaller particle size (500 nm) as produced in this study by sol-gel synthesis method with optimal SPS process...

Revealing the optoelectronic and thermoelectric properties of the Zintl quaternary arsenides ACdGeAs{sub 2} (A = K, Rb)

Energy Technology Data Exchange (ETDEWEB)

Azam, Sikander; Khan, Saleem Ayaz [New Technologies—Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Goumri-Said, Souraya, E-mail: Souraya.Goumri-Said@chemistry.gatech.edu [School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, Atlanta, GA 30332-0400 (United States)

2015-10-15

Highlights: • Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) are chalcopyrite and semiconductors. • Their direct band gap is suitable for PV, optolectronic and thermoelectric applications. • Combination of DFT and Boltzmann transport theory is employed. • The present arsenides are found to be covalent materials. - Abstract: Chalcopyrite semiconductors have attracted much attention due to their potential implications in photovoltaic and thermoelectric applications. First principle calculations were performed to investigate the electronic, optical and thermoelectric properties of the Zintl tetragonal phase ACdGeAs{sub 2} (A = K, Rb) using the full potential linear augmented plane wave method and the Engle–Vosko GGA (EV–GGA) approximation. The present compounds are found semiconductors with direct band gap and covalent bonding character. The optical transitions are investigated via the dielectric function (real and imaginary parts) along with other related optical constants including refractive index, reflectivity and energy-loss spectrum. Combining results from DFT and Boltzmann transport theory, we reported the thermoelectric properties such as the Seebeck’s coefficient, electrical and thermal conductivity, figure of merit and power factor as function of temperatures. The present chalcopyrite Zintl quaternary arsenides deserve to be explored for their potential applications as thermoelectric materials and for photovoltaic devices.

Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

Science.gov (United States)

Snyder, G. Jeffrey; Christensen, Mogens; Nishibori, Eiji; Caillat, Thierry; Brummerstedt Iversen, Bo

2004-01-01

By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

International Nuclear Information System (INIS)

Chen, Xi; Shi, Li; Zhou, Jianshi; Goodenough, John B.

2015-01-01

Highlights: • The already low κ L of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Directory of Open Access Journals (Sweden)

James (Zi-Jian Ju

2016-04-01

Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

Thermoelectric Properties for a Suspended Microribbon of Quasi-One-Dimensional TiS3

Science.gov (United States)

Sakuma, Tasuku; Nishino, Shunsuke; Miyata, Masanobu; Koyano, Mikio

2018-06-01

Transition-metal trichalcogenides MX3 (M = Ti, Zr, Nb, Ta; X = S, Se) are well-known inorganic quasi-one-dimensional conductors. Among them, we have investigated the thermoelectric properties of titanium trisulfide TiS3 microribbon. The electrical resistivity ρ, thermal conductivity κ, and thermoelectric power S were measured using 3 ω method. The weight mean values were found to be ρ = 5 mω m and κ = 10 W K-1 m-1 along the one-dimensional direction ( b-axis) of the TiS3 microribbon. Combined with the thermoelectric power S = -530 μV K-1, the figure of merit was calculated as ZT = 0.0023. This efficiency is the same as that of randomly oriented bulk TiS3. We also estimated the anisotropy of σ and κ using the present results and those for randomly oriented bulk material. The obtained weak anisotropy for TiS3 is attributable to strong coupling between triangular columns consisting of TiS3 units. These experimental results are consistent with theoretical results obtained using density functional theory (DFT) calculations.

Thermoelectric Properties for a Suspended Microribbon of Quasi-One-Dimensional TiS3

Science.gov (United States)

Sakuma, Tasuku; Nishino, Shunsuke; Miyata, Masanobu; Koyano, Mikio

2018-02-01

Transition-metal trichalcogenides MX3 (M = Ti, Zr, Nb, Ta; X = S, Se) are well-known inorganic quasi-one-dimensional conductors. Among them, we have investigated the thermoelectric properties of titanium trisulfide TiS3 microribbon. The electrical resistivity ρ, thermal conductivity κ, and thermoelectric power S were measured using 3ω method. The weight mean values were found to be ρ = 5 mω m and κ = 10 W K-1 m-1 along the one-dimensional direction (b-axis) of the TiS3 microribbon. Combined with the thermoelectric power S = -530 μV K-1, the figure of merit was calculated as ZT = 0.0023. This efficiency is the same as that of randomly oriented bulk TiS3. We also estimated the anisotropy of σ and κ using the present results and those for randomly oriented bulk material. The obtained weak anisotropy for TiS3 is attributable to strong coupling between triangular columns consisting of TiS3 units. These experimental results are consistent with theoretical results obtained using density functional theory (DFT) calculations.

Doping site dependent thermoelectric properties of epitaxial strontium titanate thin films

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Mehdizadeh Dehkordi, Arash; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

We demonstrate that the thermoelectric properties of epitaxial strontium titanate (STO) thin films can be improved by additional B-site doping of A-site doped ABO3 type perovskite STO. The additional B-site doping of A-site doped STO results in increased electrical conductivity, but at the expense of Seebeck coefficient. However, doping on both sites of the STO lattice significantly reduces the lattice thermal conductivity of STO by adding more densely and strategically distributed phononic scattering centers that attack wider phonon spectra. The additional B-site doping limits the trade-off relationship between the electrical conductivity and total thermal conductivity of A-site doped STO, leading to an improvement in the room-temperature thermoelectric figure of merit, ZT. The 5% Pr3+ and 20% Nb5+ double-doped STO film exhibits the best ZT of 0.016 at room temperature. This journal is

Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

Energy Technology Data Exchange (ETDEWEB)

Ouardi, Siham

2012-03-19

This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications. The first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co{sub 2}MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound. A major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. This thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi{sub 1-x}M{sub x}Sn (where M=Sc, V and 0properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The pure compounds showed n-type behavior, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 {mu}V/K (350 K) was obtained for NiTi{sub 0.26}Sc{sub 0.04}Zr{sub 0.35}Hf{sub 0.35}Sn. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi{sub 0.3}Zr{sub 0.35}Hf{sub 0.35}Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk

Thermoelectricity: materials and applications

International Nuclear Information System (INIS)

Elberg, S.; Mathonnet, P.

1975-01-01

After a brief recall of the basic principles of thermoelectricity, the essential characteristics intervening in the different thermoelectric devices operating modes are defined. Properties of the materials the most used nowadays and performances of the apparatus that they allow to realize are indicated. Advantages and drawbacks of the principal applications in the form of electrical generators, refrigerators and heat pumps are pointed out [fr

Thermoelectric properties of V{sub 2}O{sub 5} thin films deposited by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Santos, R.; Loureiro, J., E-mail: joa.loureiro@gmail.com; Nogueira, A.; Elangovan, E.; Pinto, J.V.; Veiga, J.P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I., E-mail: imf@fct.unl.pt

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V{sub 2}O{sub 5}) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V{sub 2}O{sub 5} phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of −218 μV/K and electrical conductivity of 5.5 (Ω m){sup −1}. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Thermoelectric Properties of the Chemically Doped Ca3Co4O9 System: A Structural Perspective

Science.gov (United States)

Wu, Tao; Tyson, Trevor; Wang, Hsin; Li, Qiang

2010-03-01

Cu doped and Y doped [Ca2CoO3][CoO2]1.61 (referred to as Ca3Co4O9) were prepared by solid state reaction. Temperature dependent thermoelectric properties, resistivity (ρ), Seeback coefficient (S) and thermal conductivity (κ), were measured. As seen before, it is found that doping by Cu and Y significantly enhances the thermoelectric properties. In order to understand the origin of these changes in properties in terms of the atomic structure, synchrotron x-ray diffraction and x-ray absorption spectroscopy were applied to probe the change in the average structure and the location of the dopants. The details of the location and coordination of Co and Y in the host lattice and the effect on the figure of merit are discussed. This work is supported by DOE Grant DE-FG02-07ER46402.

Electronic, optical, and thermoelectric properties of Fe2+xV1−xAl

Directory of Open Access Journals (Sweden)

D. P. Rai

2017-04-01

Full Text Available We report the electronic, optical, and thermoelectric properties of full-Heusler alloy Fe2VAl with Fe antisite doping (Fe2+xV1−xAl as obtained from the first-principles Tran-Blaha modified Becke-Johnson potential. The results are discussed in relation to the available experimental data and show good agreements for the band gap, magnetic moment, and optical spectra. Exploring our transport data for thermoelectric applicability suggest that Fe2+xV1−xAl is a good candidate with a high figure of merit (ZT 0.75(0.65 for x = 0.25(0.50 at room temperature.

Thermoelectric properties of high electron concentration materials under large temperature gradients

International Nuclear Information System (INIS)

Bulat, L.P.; Stefansky, V.A.

1994-01-01

Theoretical methods of investigating of transport properties in solids under large temperature gradients are grounded. The nonlinear and non-local expressions for current density and heat flow are obtained with degenerated of current carriers gas. A number of new effects with large temperature gradients have been tested. Use of large temperature gradients leads to the increasing of the thermoelectric figure of merit. copyright 1995 American Institute of Physics

Prospects for Engineering Thermoelectric Properties in La1/3NbO3 Ceramics Revealed via Atomic-Level Characterization and Modeling.

Science.gov (United States)

Kepaptsoglou, Demie; Baran, Jakub D; Azough, Feridoon; Ekren, Dursun; Srivastava, Deepanshu; Molinari, Marco; Parker, Stephen C; Ramasse, Quentin M; Freer, Robert

2018-01-02

A combination of experimental and computational techniques has been employed to explore the crystal structure and thermoelectric properties of A-site-deficient perovskite La 1/3 NbO 3 ceramics. Crystallographic data from X-ray and electron diffraction confirmed that the room temperature structure is orthorhombic with Cmmm as a space group. Atomically resolved imaging and analysis showed that there are two distinct A sites: one is occupied with La and vacancies, and the second site is fully unoccupied. The diffuse superstructure reflections observed through diffraction techniques are shown to originate from La vacancy ordering. La 1/3 NbO 3 ceramics sintered in air showed promising high-temperature thermoelectric properties with a high Seebeck coefficient of S 1 = -650 to -700 μV/K and a low and temperature-stable thermal conductivity of k = 2-2.2 W/m·K in the temperature range of 300-1000 K. First-principles electronic structure calculations are used to link the temperature dependence of the Seebeck coefficient measured experimentally to the evolution of the density of states with temperature and indicate possible avenues for further optimization through electron doping and control of the A-site occupancies. Moreover, lattice thermal conductivity calculations give insights into the dependence of the thermal conductivity on specific crystallographic directions of the material, which could be exploited via nanostructuring to create high-efficiency compound thermoelectrics.

Magnetic and thermoelectric properties of three different atomic ratio of Bi/Mn in BiMn2O5: DFT approach

International Nuclear Information System (INIS)

Khan, Wilayat; Reshak, A.H.; Rafezi Ahmad, Khairel; Alahmed, Z.A.

2014-01-01

Electronic structure and magnetic properties of the three different samples of BiMn 2 O 5 , are calculated using the density functional theory (DFT). These samples have different Bi/Mn concentration. For simplicity, we suggest to call them as A, B and C. The calculated band structures show half metallicity for all samples, and possess 100% spin polarization at the Fermi level. The spin up/down density of states are calculated using Engel–Vosko generalized gradient approximation (EV-GGA). We have discussed the effect of Mn magnetic moment (μ B ) on the electronic and magnetic properties of the entire samples. The temperature dependent thermoelectric properties like electrical and thermal conductivity, Seebeck coefficient and power factor are also calculated, employing the Boltzmann transport theory under the BoltzTraP code. Our results indicated that these properties are strongly dependent on Bi/Mn concentration. - Highlights: • FPLAPW method used for calculating the electronic Structure. • The band structure shows that the calculated compounds are half metallic. • The magnetic properties have been calculated. • Thermoelectric properties were also calculated using Boltzmann theory. • Calculated power factor shows that sample B are good thermoelectric material

Structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr, Ba)

Science.gov (United States)

Benahmed, A.; Bouhemadou, A.; Alqarni, B.; Guechi, N.; Al-Douri, Y.; Khenata, R.; Bin-Omran, S.

2018-05-01

First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.

Electronic structure and physical properties of Heusler compounds for thermoelectric and spintronic applications

International Nuclear Information System (INIS)

Ouardi, Siham

2012-01-01

This thesis focuses on synthesis as well as investigations of the electronic structure and properties of Heusler compounds for spintronic and thermoelectric applications. The first part reports on the electronic and crystal structure as well as the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co 2 MnGe. The crystalline structure was examined in detail by extended X-ray absorption fine structure spectroscopy and anomalous X-ray diffraction. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab-initio calculations. Transport measurements and hard X-ray photoelectron spectroscopy (HAXPES) were performed to explain the electronic structure of the compound. A major part of the thesis deals with a systematical investigation of Heusler compounds for thermoelectric applications. This thesis focuses on the search for new p-type Heusler compounds with high thermoelectric efficiency. The substitutional series NiTi 1-x M x Sn (where M=Sc, V and 0 0.26 Sc 0.04 Zr 0.35 Hf 0.35 Sn. HAXPES valence band measurement show massive in gap states for the parent compounds NiTiSn, CoTiSb and NiTi 0.3 Zr 0.35 Hf 0.35 Sn. This proves that the electronic states close to the Fermi energy play a key role for the behavior of the transport properties. Furthermore, the electronic structure of the gapless Heusler compounds PtYSb, PtLaBi and PtLuSb were investigated by bulk sensitive HAXPES. The linear behavior of the spectra close to εF proves the bulk origin of Dirac-cone type density of states. Furthermore, a systematic study on the optical and transport properties of PtYSb is presented. The compound exhibits promising thermoelectric properties with a high figure of merit (ZT=0.2) and a Hall mobility μh of 300 cm 2 /Vs at 350 K. The last part of this thesis describes the linear dichroism in angular-resolved photoemission from the valence band

Carbon-Nanotube-Based Thermoelectric Materials and Devices

Energy Technology Data Exchange (ETDEWEB)

Blackburn, Jeffrey L. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Ferguson, Andrew J. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Cho, Chungyeon [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA; Grunlan, Jaime C. [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA

2018-01-22

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.

Thermoelectric Properties of SnO2 Ceramics Doped with Sb and Zn

DEFF Research Database (Denmark)

Yanagiya, S.; Van Nong, Ngo; Xu, Jianxiao Jackie

2011-01-01

Polycrystalline SnO2-based samples (Sn0.97−x Sb0.03Zn x O2, x = 0, 0.01, 0.03) were prepared by solid-state reactions. The thermoelectric properties of SnO2 doped with Sb and Zn were investigated from 300 K to 1100 K. X-ray diffraction (XRD) analysis revealed all XRD peaks of all the samples...

Thermoelectric properties of the misfit cobaltate Ca3Co4O9

KAUST Repository

Amin, Bin; Eckern, Ulrich; Schwingenschlö gl, Udo

2017-01-01

The layered misfit cobaltate CaCoO, also known as CaCoO[CoO], is a promising p-type thermoelectric oxide. Employing density functional theory, we study its electronic structure and determine, on the basis of Boltzmann theory within the constant-relaxation-time approximation, the thermoelectric transport coefficients. The dependence on strain and temperature is determined. In particular, we find that the XX-component of the thermopower is strongly enhanced, while the yy-component is strongly reduced, when applying 2% tensile strain. A similar anisotropy is also found in the power factor. The temperature dependence of the conductivity in the a-b plane is found to be rather weak above 200 K, which clearly indicates that the experimentally observed transport properties are dominated by inhomogeneities arising during sample growth, i.e., they are not intrinsic.

Thermoelectric properties of the misfit cobaltate Ca3Co4O9

KAUST Repository

Amin, Bin

2017-06-09

The layered misfit cobaltate CaCoO, also known as CaCoO[CoO], is a promising p-type thermoelectric oxide. Employing density functional theory, we study its electronic structure and determine, on the basis of Boltzmann theory within the constant-relaxation-time approximation, the thermoelectric transport coefficients. The dependence on strain and temperature is determined. In particular, we find that the XX-component of the thermopower is strongly enhanced, while the yy-component is strongly reduced, when applying 2% tensile strain. A similar anisotropy is also found in the power factor. The temperature dependence of the conductivity in the a-b plane is found to be rather weak above 200 K, which clearly indicates that the experimentally observed transport properties are dominated by inhomogeneities arising during sample growth, i.e., they are not intrinsic.

CuAlTe{sub 2}: A promising bulk thermoelectric material

Energy Technology Data Exchange (ETDEWEB)

Gudelli, Vijay Kumar [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Telangana (India)

2015-11-05

Transport properties of Cu-based chalcopyrite materials are presented using the full potential linear augmented plane wave method and Boltzmann Semi-classical theory. All the studied compounds appear to be direct band gap semiconductors evaluated based on the Tran-Blaha modified Becke-Johnson potential. The heavy and light band combination found near the valence band maximum (VBM) drive these materials to possess good thermoelectric properties. Among the studied compounds, CuAlTe{sub 2} is found to be more promising, in comparison with CuGaTe{sub 2}, which is reported to be an efficient thermoelectric material with appreciable figure of merit. Another interesting fact about CuAlTe{sub 2} is the comparable thermoelectric properties possessed by both n- type and p-type carriers, which might attract good device applications and are explained in detail using the electronic structure calculations. - Highlights: • Band structure calculation of Cu(Al,Ga)Ch{sub 2} compounds with the TB-mBJ functional. • Mixed heavy-light bands near Fermi level might favour good thermoelectric properties. • Among the investigated compounds CuAlTe{sub 2} appears to be more promising. • Thermoelectric properties of CuAlTe{sub 2} are almost comparable with CuGaTe{sub 2}. • Both n,p-type thermoelectric properties of CuAlTe{sub 2} can attract device applications.

High Temperature Integrated Thermoelectric Ststem and Materials

Energy Technology Data Exchange (ETDEWEB)

Mike S. H. Chu

2011-06-06

The final goal of this project is to produce, by the end of Phase II, an all ceramic high temperature thermoelectric module. Such a module design integrates oxide ceramic n-type, oxide ceramic p-type materials as thermoelectric legs and oxide ceramic conductive material as metalizing connection between n-type and p-type legs. The benefits of this all ceramic module are that it can function at higher temperatures (> 700 C), it is mechanically and functionally more reliable and it can be scaled up to production at lower cost. With this all ceramic module, millions of dollars in savings or in new opportunities recovering waste heat from high temperature processes could be made available. A very attractive application will be to convert exhaust heat from a vehicle to reusable electric energy by a thermoelectric generator (TEG). Phase I activities were focused on evaluating potential n-type and p-type oxide compositions as the thermoelectric legs. More than 40 oxide ceramic powder compositions were made and studied in the laboratory. The compositions were divided into 6 groups representing different material systems. Basic ceramic properties and thermoelectric properties of discs sintered from these powders were measured. Powders with different particles sizes were made to evaluate the effects of particle size reduction on thermoelectric properties. Several powders were submitted to a leading thermoelectric company for complete thermoelectric evaluation. Initial evaluation showed that when samples were sintered by conventional method, they had reasonable values of Seebeck coefficient but very low values of electrical conductivity. Therefore, their power factors (PF) and figure of merits (ZT) were too low to be useful for high temperature thermoelectric applications. An unconventional sintering method, Spark Plasma Sintering (SPS) was determined to produce better thermoelectric properties. Particle size reduction of powders also was found to have some positive benefits

Exploring the thermoelectric and magnetic properties of uranium selenides: Tl2Ag2USe4 and Tl3Cu4USe6

International Nuclear Information System (INIS)

Azam, Sikander; Khan, Saleem Ayaz; Din, Haleem Ud; Khenata, Rabah; Goumri-Said, Souraya

2016-01-01

The electronic, magnetic and thermoelectric properties of Tl 2 Ag 2 USe 4 and Tl 3 Cu 4 USe 6 compounds were investigated using the full potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). The exchange correlation was treated with the generalized gradient approximation plus optimized effective Hubbard parameter and spin–orbit coupling (GGA+U+SOC). The present uranium selenides show narrow direct energy band gap values of 0.7 and 0.875 eV for Tl 2 Ag 2 USe 4 and Tl 3 Cu 4 USe 6 respectively. For both selenides U-d/f states are responsible for electrical transport properties. Uranium atoms were the most contributors in the magnetic moment compared to other atoms and show ferromagnetic nature. The spin density isosurfaces show the polarization of neighboring atoms of Uranium, such as silver/copper and selenium. Thermoelectric calculations reveal that Tl 3 Cu 4 USe 6 is more suitable for thermoelectric device applications than Tl 2 Ag 2 USe 4 . - Highlights: • Electronic, magnetic and thermoelectric properties of uranium selenides are investigated with DFT. • They show a narrow direct energy band gap of 0.7 and 0.875 eV. • U-d/f states are responsible for electrical transport properties. • Tl 3 Cu 4 USe 6 is more suitable for thermoelectric device applications than Tl 2 Ag 2 USe 4 .

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

KAUST Repository

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Darroudi, Taghi; Zeng, Xiaoyu; Alshareef, Husam N.; Tritt, Terry M.

2015-01-01

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties

KAUST Repository

Mehdizadeh Dehkordi, Arash

2015-08-15

We demonstrate a novel synthesis strategy for the preparation of Pr-doped SrTiO3 ceramics via a combination of solid state reaction and spark plasma sintering techniques. Polycrystalline ceramics possessing a unique morphology can be achieved by optimizing the process parameters, particularly spark plasma sintering heating rate. The phase and morphology of the synthesized ceramics were investigated in detail using X-ray diffraction, scanning electron microcopy and energy-dispersive X-ray spectroscopy It was observed that the grains of these bulk Pr-doped SrTiO3 ceramics were enhanced with Pr-rich grain boundaries. Electronic and thermal transport properties were also investigated as a function of temperature and doping concentration Such a microstructure was found to give rise to improved thermoelectric properties. Specifically, it resulted in a significant improvement in carrier mobility and the thermoelectric power factor. Simultaneously, it also led to a marked reduction in the thermal conductivity. As a result, a significant improvement (> 30%) in the thermoelectric figure of merit was achieved for the whole temperature range over all previously reported maximum values for SrTiO3-based ceramics. This synthesis demonstrates the steps for the preparation of bulk polycrystalline ceramics of non-uniformly Pr-doped SrTiO3.

Effects of ball milling on microstructures and thermoelectric properties of higher manganese silicides

Energy Technology Data Exchange (ETDEWEB)

Chen, Xi [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Shi, Li, E-mail: lishi@mail.utexas.edu [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States); Zhou, Jianshi; Goodenough, John B. [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, TX 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712 (United States)

2015-08-25

Highlights: • The already low κ{sub L} of HMS can be suppressed further by decreasing the grain size. • The ball milling process can lead to the formation of secondary MnSi and W/C-rich phases. • The formation of the MnSi ad W/C rich phases is found to suppress the thermoelectric power factor. - Abstract: Bulk nanostructured higher manganese silicide (HMS) samples with different grain size are prepared by melting, subsequent ball milling (BM), and followed by spark plasma sintering (SPS). The effects of BM time on the microstructures and thermoelectric properties of these samples are investigated. It is found that BM effectively reduces the grain size to about 90 nm in the sample after SPS, which leads to a decrease in both the thermal conductivity and electrical conductivity. By prolonging the BM time, MnSi and tungsten/carbon-rich impurity phases are formed due to the impact-induced decomposition of HMS and contamination from the tungsten carbide jar and balls during the BM, respectively. These impurities result in a reduced Seebeck coefficient and increased thermal conductivity above room temperature. The measured size-dependent lattice thermal conductivities agree qualitatively with the reported calculation results based on a combined phonon and diffuson model. The size effects are found to be increasingly significant as temperature decreases. Because of the formation of the impurity phases and a relatively large grain size, the ZT values are not improved in the ball-milled HMS samples. These findings suggest the need of alternative approaches for the synthesis of pure HMS with further reduced grain size and controlled impurity doping in order to enhance the thermoelectric figure-of-merit of HMS via nanostructuring.

Synthesis, thermal behavior and thermoelectric properties of disordered tellurides with structures derived from the rocksalt type

Energy Technology Data Exchange (ETDEWEB)

Schroeder, Thorsten

2014-06-17

GeBi{sub 2}Te{sub 4} is proposed as phase-change material. Nanostructures in metastable GeBi{sub 2}Te{sub 4} were obtained by high-pressure synthesis and thermal quenching, - depending on temperature and pressure different modifications were found. The differences in the electrical characteristics can be attributed to the variation of grain boundary concentration and the grain size distribution. Two synthesis approaches were used to prepare Ag{sub 3.4}In{sub 3.7}Sb{sub 76.4}Te{sub 16.5} bulk samples and studied with respect to their transport and thermal properties. A high pressure route to prepare thermoelectrics with low thermal conductivity was developed for AgIn{sub x}Sb{sub 1-x}Te{sub 2}. Disorder and and transport studies on In{sub 3}SbTe{sub 2} were performed using X-ray, neutron and electron diffraction measurements. Nanostructures in Te/Sb/Ge/Ag (TAGS) thermoelectric materials were induced by phase transitions associated with vacancy ordering. Further studies concerned solid solution series (GeTe){sub x}(LiSbTe{sub 2}){sub 2} (1 smaller or equal x smaller or equal 11) and their thermoelectric properties.

Thermoelectric properties of semiconductor nanowire networks

Science.gov (United States)

Roslyak, Oleksiy; Piryatinski, Andrei

2016-03-01

To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

Thermoelectric Performance of Na-Doped GeSe

NARCIS (Netherlands)

Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

2017-01-01

Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Development of Perovskite-Type Materials for Thermoelectric Application

Directory of Open Access Journals (Sweden)

Tingjun Wu

2018-06-01

Full Text Available Oxide perovskite materials have a long history of being investigated for thermoelectric applications. Compared to the state-of-the-art tin and lead chalcogenides, these perovskite compounds have advantages of low toxicity, eco-friendliness, and high elemental abundance. However, because of low electrical conductivity and high thermal conductivity, the total thermoelectric performance of oxide perovskites is relatively poor. Variety of methods were used to enhance the TE properties of oxide perovskite materials, such as doping, inducing oxygen vacancy, embedding crystal imperfection, and so on. Recently, hybrid perovskite materials started to draw attention for thermoelectric application. Due to the low thermal conductivity and high Seebeck coefficient feature of hybrid perovskites materials, they can be promising thermoelectric materials and hold the potential for the application of wearable energy generators and cooling devices. This mini-review will build a bridge between oxide perovskites and burgeoning hybrid halide perovskites in the research of thermoelectric properties with an aim to further enhance the relevant performance of perovskite-type materials.

Carbon-Nanotube-Based Thermoelectric Materials and Devices.

Science.gov (United States)

Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

2018-03-01

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

Science.gov (United States)

Chen, Xin; Parker, David; Singh, David J.

2013-01-01

We present an analysis of the thermoelectric properties of of n-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 e per formula unit (7–9 × 1019 cm−3 depending on material). Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit n-type performance exceeding that of the lead chalcogenides. PMID:24196778

Mechanical Response of Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, Andrew A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Case, Eldon D. [Michigan State Univ., East Lansing, MI (United States)

2015-05-01

A sufficient mechanical response of thermoelectric materials (TEMats) to structural loadings is a prerequisite to the exploitation of any candidate TEMat's thermoelectric efficiency. If a TEMat is mechanically damaged or cracks from service-induced stresses, then its thermal and electrical functions can be compromised or even cease. Semiconductor TEMats tend to be quite brittle and have a high coefficient of thermal expansion; therefore, they can be quite susceptible to mechanical failure when subjected to operational thermal gradients. Because of this, sufficient mechanical response (vis-a-vis, mechanical properties) of any candidate TEMat must be achieved and sustained in the context of the service-induced stress state to which it is subjected. This report provides an overview of the mechanical responses of state-of-the-art TEMats; discusses the relevant properties that are associated with those responses and their measurement; and describes important, nonequilibrium phenomena that further complicate their use in thermoelectric devices. For reference purposes, the report also includes several appendixes that list published data on elastic properties and strengths of a variety of TEMats.

High-temperature thermoelectric properties of AgxYyCa2⋅ 8Co4O9 ...

Indian Academy of Sciences (India)

temperature thermoelectric properties of AgYCa2.8Co4O9 + ceramics. Youjin Zheng Hui Zhou Tengzhou Ma Guihong Zuo Hongtao Li Taichao Su Chunlei Wu Hailiang Huang Dan Wang Longcheng Yin. Volume 37 Issue 5 August 2014 pp 963- ...

Thermoelectric transport in superlattices

Energy Technology Data Exchange (ETDEWEB)

Reinecke, T L; Broido, D A

1997-07-01

The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2.

Science.gov (United States)

Huang, Wen; Luo, Xin; Gan, Chee Kwan; Quek, Su Ying; Liang, Gengchiau

2014-06-14

Molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) are prototypical layered two-dimensional transition metal dichalcogenide materials, with each layer consisting of three atomic planes. We refer to each layer as a trilayer (TL). We study the thermoelectric properties of 1-4TL MoS2 and WSe2 using a ballistic transport approach based on the electronic band structures and phonon dispersions obtained from first-principles calculations. Our results show that the thickness dependence of the thermoelectric properties is different under n-type and p-type doping conditions. Defining ZT1st peak as the first peak in the thermoelectric figure of merit ZT as doping levels increase from zero at 300 K, we found that ZT1st peak decreases as the number of layers increases for MoS2, with the exception of 2TL in n-type doping, which has a slightly higher value than 1TL. However, for WSe2, 2TL has the largest ZT1st peak in both n-type and p-type doping, with a ZT1st peak value larger than 1 for n-type WSe2. At high temperatures (T > 300 K), ZT1st peak dramatically increases when the temperature increases, especially for n-type doping. The ZT1st peak of n-type 1TL-MoS2 and 2TL-WSe2 can reach 1.6 and 2.1, respectively.

Influence of Oxygen Partial Pressure during Processing on the Thermoelectric Properties of Aerosol-Deposited CuFeO₂.

Science.gov (United States)

Stöcker, Thomas; Exner, Jörg; Schubert, Michael; Streibl, Maximilian; Moos, Ralf

2016-03-24

In the field of thermoelectric energy conversion, oxide materials show promising potential due to their good stability in oxidizing environments. Hence, the influence of oxygen partial pressure during synthesis on the thermoelectric properties of Cu-Delafossites at high temperatures was investigated in this study. For these purposes, CuFeO₂ powders were synthetized using a conventional mixed-oxide technique. X-ray diffraction (XRD) studies were conducted to determine the crystal structures of the delafossites associated with the oxygen content during the synthesis. Out of these powders, films with a thickness of about 25 µm were prepared by the relatively new aerosol-deposition (AD) coating technique. It is based on a room temperature impact consolidation process (RTIC) to deposit dense solid films of ceramic materials on various substrates without using a high-temperature step during the coating process. On these dense CuFeO₂ films deposited on alumina substrates with electrode structures, the Seebeck coefficient and the electrical conductivity were measured as a function of temperature and oxygen partial pressure. We compared the thermoelectric properties of both standard processed and aerosol deposited CuFeO₂ up to 900 °C and investigated the influence of oxygen partial pressure on the electrical conductivity, on the Seebeck coefficient and on the high temperature stability of CuFeO₂. These studies may not only help to improve the thermoelectric material in the high-temperature case, but may also serve as an initial basis to establish a defect chemical model.

GEO-TEP. Development of thermoelectric materials for geothermal energy conversion systems. Final report 2008

Energy Technology Data Exchange (ETDEWEB)

Bocher, L.; Weidenkaff, A.

2008-07-01

Geothermal heat can be directly converted into electricity by using thermoelectric converters. Thermoelectric conversion relies on intrinsic materials properties which have to be optimised. In this work novel environmentally friendly and stable oxide ceramics were developed to fulfil this task. Thus, manganate phases were studied regarding their potential thermoelectric properties for converting geothermal heat into electricity. Perovskite-type phases were synthesized by applying different methods: the ceramic route, and innovative synthesis routes such as the 'chimie douce' method by bulk thermal decomposition of the citrate precursor or using an USC process, and also the polyol-mediated synthesis route. The crystal structures of the manganate phases are evaluated by XRPD, NPD, and ED techniques while specific microstructures such as twinned domains are highlighted by HRTEM imaging. Besides, the thermal stability of the Mn-oxide phases in air atmosphere are controlled over a wide temperature range (T < 1300 K). The thermoelectric figure of merit ZT was enhanced from 0.021 to 0.3 in a broad temperature range for the studied phases which makes these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures. (author)

Thermoelectric properties of ternary phases of thallium-tin-tellurium system

Energy Technology Data Exchange (ETDEWEB)

Dichi, E. [Equipe materiaux et sante, faculte de pharmacie, universite Paris XI, 5, rue J.B, EA 401, Clement 92296 Chatenay-Malabry (France)], E-mail: emma.dichi@cep.u-psud.fr; Sghaier, M. [Equipe materiaux et sante, faculte de pharmacie, universite Paris XI, 5, rue J.B, EA 401, Clement 92296 Chatenay-Malabry (France); Kra, G. [Laboratoire de chimie minerale, universite de Cocody, 22, BP 582, Abidjan 22, Cote d' Ivoire (France)

2008-06-30

In this paper, we present the measurements of conductivity and of thermoelectric power. Measurements were taken for the temperature range of 100-330 K for the three ternary phases of Tl-Sn-Te system. The potential of these compounds as thermoelectric materials was studied.

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

Holistic quantum design of thermoelectric niobium oxynitride

Science.gov (United States)

Music, Denis; Bliem, Pascal; Hans, Marcus

2015-06-01

We have applied holistic quantum design to thermoelectric NbON (space group Pm-3m). Even though transport properties are central in designing efficient thermoelectrics, mechanical properties should also be considered to minimize their thermal fatigue during multiple heating/cooling cycles. Using density functional theory, elastic constants of NbON were predicted and validated by nanoindentation measurements on reactively sputtered thin films. Based on large bulk-to-shear modulus ratio and positive Cauchy pressure, ceramic NbON appears ductile. These unusual properties may be understood by analyzing the electronic structure. Nb-O bonding is of covalent-ionic nature with metallic contributions. Second neighbor O-N bonds exhibit covalent-ionic character. Upon shear loading, these O-N bonds break giving rise to easily shearable planes. Ductile NbON, together with large Seebeck coefficient and low thermal expansion, is promising for thermoelectric applications.

Modeling of interface roughness in thermoelectric composite materials

International Nuclear Information System (INIS)

Gather, F; Heiliger, C; Klar, P J

2011-01-01

We use a network model to calculate the influence of the mesoscopic interface structure on the thermoelectric properties of superlattice structures consisting of alternating layers of materials A and B. The thermoelectric figure of merit of such a composite material depends on the layer thickness, if interface resistances are accounted for, and can be increased by proper interface design. In general, interface roughness reduces the figure of merit, again compared to the case of ideal interfaces. However, the strength of this reduction depends strongly on the type of interface roughness. Smooth atomic surface diffusion leading to alloying of materials A and B causes the largest reduction of the figure of merit. Consequently, in real structures, it is important not only to minimize interface roughness, but also to control the type of roughness. Although the microscopic effects of interfaces are only empirically accounted for, using a network model can yield useful information about the dependence of the macroscopic transport coefficients on the mesoscopic disorder in structured thermoelectric materials.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

International Nuclear Information System (INIS)

Blumers, Mathias

2012-01-01

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

KAUST Repository

Pu, Jiang

2016-07-27

The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor off-state in the ambipolar WSe2 transistor as the majority carrier density switches from electron to hole. The thermopower and thermoelectric power factor of monolayer samples are one order of magnitude larger than that of bulk materials, and their carrier-density dependences exhibit a quantitative agreement with the semiclassical Mott relation based on the two-dimensional energy band structure, concluding the thermoelectric properties are enhanced by the low-dimensional effect.

The thermoelectric performance of bulk three-dimensional graphene

Energy Technology Data Exchange (ETDEWEB)

Yang, Zhi, E-mail: yangzhi@tyut.edu.cn [Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education and Shanxi Province, Taiyuan University of Technology, Taiyuan 030024 (China); College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Lan, Guoqiang; Ouyang, Bin [Department of Mining and Materials Engineering, McGill University, Montreal H3A 0C5 (Canada); Xu, Li-Chun; Liu, Ruiping [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Liu, Xuguang, E-mail: liuxuguang@tyut.edu.cn [Key Lab of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China); College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Song, Jun [Department of Mining and Materials Engineering, McGill University, Montreal H3A 0C5 (Canada)

2016-11-01

The electronic and thermoelectric properties of a new carbon bulk material, three-dimensional (3D) graphene, are investigated in this study. Our results show that 3D graphene has unique electronic structure, i.e., near the Fermi level there exist Dirac cones. More importantly, the thermoelectric performance of 3D graphene is excellent, at room temperature the thermoelectric figure of merit (ZT) is 0.21, an order of magnitude higher than that of graphene. By introducing line defects, the ZT of 3D graphene could be enhanced to 1.52, indicating 3D graphene is a powerful candidate for constructing novel thermoelectric materials. - Highlights: • There exist Dirac cones in three-dimensional (3D) graphene. • The thermoelectric performance of 3D graphene is excellent. • The defective 3D graphene has better thermoelectric performance.

Distributed detection and control of defective thermoelectric generation modules using sensor nodes

DEFF Research Database (Denmark)

Chen, Min

2014-01-01

are described, respectively. Defective and potentially healing conditions are dynamically monitored by a voltage sensor node and a temperature sensor node, both of which can judge the defective TEM and decide the related switching actions in a nearly independent way. The periodical wireless transmission from......To maximize the energy productivity, effective in-field detection and real-time control of defective thermoelectric modules (TEMs) are critical in constituting a thermoelectric generation system (TEGS). In this paper, autonomous and distributed sensor nodes are designed to implement the wireless...... a considerable power improvement is illustrated with the proposed measuring method and setup....

Some thermoelectric properties of the light rare earth sesquiselenides (R2Se/sub 3-x/)

International Nuclear Information System (INIS)

Takeshita, T.; Beaudry, B.J.; Gschneidner, K.A. Jr.

1981-01-01

Rare earth sesquiselenides of the Th 3 P 4 structure show variable electric properties over their homogeneity range, i.e., ranging from metallic (R 3 Se 4 ) to semimetallic (R 2 Se/sub 3-x/, where 0.14 > x > 0) to semiconducting (R 2 Se 3 ). The composition change is due to the formation of metal vacancies in the Th 3 P 4 structure with no vacancies at R 3 Se 4 and 4.75 at. % vacancies at R 2 Se 3 . The rare earth sesquiselenides are also refractory materials and therefore are of interest for high temperature thermoelectric applications. Preliminary results of thermoelectric power and electrical resistivity measurements on the light lanthanide sesquiselenides (La through Sm) are presented

Low-temperature thermoelectric power factor enhancement by controlling nanoparticle size distribution.

Science.gov (United States)

Zebarjadi, Mona; Esfarjani, Keivan; Bian, Zhixi; Shakouri, Ali

2011-01-12

Coherent potential approximation is used to study the effect of adding doped spherical nanoparticles inside a host matrix on the thermoelectric properties. This takes into account electron multiple scatterings that are important in samples with relatively high volume fraction of nanoparticles (>1%). We show that with large fraction of uniform small size nanoparticles (∼1 nm), the power factor can be enhanced significantly. The improvement could be large (up to 450% for GaAs) especially at low temperatures when the mobility is limited by impurity or nanoparticle scattering. The advantage of doping via embedded nanoparticles compared to the conventional shallow impurities is quantified. At the optimum thermoelectric power factor, the electrical conductivity of the nanoparticle-doped material is larger than that of impurity-doped one at the studied temperature range (50-500 K) whereas the Seebeck coefficient of the nanoparticle doped material is enhanced only at low temperatures (∼50 K).

Influence of nanosized inclusions on the room temperature thermoelectrical properties of a p-type bismuth–tellurium–antimony alloy

International Nuclear Information System (INIS)

Bernard-Granger, Guillaume; Addad, Ahmed; Navone, Christelle; Soulier, Mathieu; Simon, Julia; Szkutnik, Pierre-David

2012-01-01

Transmission electron microscopy observations and thermoelectrical property measurements (electrical conductivity, Seebeck coefficient and thermal conductivity) at room temperature have been completed on two fully dense polycrystalline p-type bismuth–tellurium–antimony alloy samples. It is shown that the presence of antimony oxide-based nanosized inclusions (controlled as to volume fraction and size distribution), homogeneously dispersed in the surrounding matrix leads to a dimensionless figure of merit (ZT) of ∼1.3 at room temperature. For comparison, when such inclusions are missing the ZT value is only 0.6.

Functionally Graded Thermoelectric Material though One Step Band Gap and Dopant Engineering

DEFF Research Database (Denmark)

Jensen, Ellen Marie; Borup, Kasper Andersen; Cederkrantz, Daniel

, and dopant concentration. Parameters relevant to the thermoelectric properties have been determined along the pulling direction. All of these properties exhibit the wanted gradient. It has thereby been shown that engineering of the electrical contributions to the thermoelectric properties of a material...

Searching for new thermoelectrics in chemically and structurally complex bismuth chalcogenides

Energy Technology Data Exchange (ETDEWEB)

Chung, D Y; Hogan, T; Schindler, J; Iordanidis, L; Brazis, P; Kannewurf, C R; Chen, B; Uher, C; Kanatzidis, M G

1997-07-01

A solid state chemistry synthetic approach towards identifying new materials with potentially superior thermoelectric properties is presented. Materials with complex compositions and structures also have complex electronic structures which may give rise to high thermoelectric powers and at the same time possess low thermal conductivities. The structures and thermoelectric properties of several new promising compounds with K-Bi-Se, K-Bi-S, Ba-Bi-Te, Cs-Bi-Te, and Rb-bi-Te are reported.

Development in Zn4Sb-based thermoelectric materials

DEFF Research Database (Denmark)

Yin, Hao

or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

Thermoelectric properties of electrodeposited tellurium films and the sodium lignosulfonate effect

International Nuclear Information System (INIS)

Abad, Begoña; Rull-Bravo, Marta; Hodson, Stephen L.; Xu, Xianfan; Martin-Gonzalez, Marisol

2015-01-01

The effect of the addition of a surfactant, sodium lignosulfonate (SLS), on the thermoelectric properties of tellurium films prepared by electrochemical deposition is studied. The growth mechanism is found to have an important role in the thermoelectric properties since the grain size of the films is sharply reduced when the surfactant is added to the solution. For this reason, the electrical resistivity of the tellurium films when the surfactant is not added is 229 μΩ·m, which is lower than 798 μΩ·m with SLS. The Seebeck coefficient values are not influenced, with values in the vicinity of 285 μV/K for both solutions. The power factor resulted higher values than previous works, reaching values of 280 μW/m·K 2 (without SLS) and 82 μW/m·K 2 (with SLS) at room temperature. Finally, the thermal conductivity was measured by means of the Photoacoustic technique, which showed values of the order of 1 W/m·K for both solutions, which is a factor of 3 less than the bulk value of tellurium. A notable observation is that the power factor and the thermal conductivity of electrodeposited tellurium films have the same order of magnitude of bismuth telluride films grown by electrodeposition. The figure of merit is estimated to be approximately one order of magnitude higher than the bulk value, 0.09 without SLS and 0.03 with SLS, both at room temperature

Advanced thermoelectric materials and systems for automotive applications in the next millennium

Energy Technology Data Exchange (ETDEWEB)

Morelli, D T

1997-07-01

A combination of environmental, economic, and technological drivers has led to a reassessment of the potential for using thermoelectric devices in several automotive applications. In order for this technology to achieve its ultimate potential, new materials with enhanced thermoelectric properties are required. Experimental results on the fundamental physical properties of some new thermoelectric materials, including filled skutterudites and 1-1-1 intermetallic semiconductors, are presented.

Thermoelectric transport in rare-earth compounds

International Nuclear Information System (INIS)

Koehler, Ulrike

2007-01-01

This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce 3 Rh 4 Sn 13 are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu 1-x Yb x Rh 2 Si 2 and Ce x La 1-x Ni 2 Ge 2 by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

Thermoelectric effects in a rectangular Aharonov-Bohm geometry

Science.gov (United States)

Pye, A. J.; Faux, D. A.; Kearney, M. J.

2016-04-01

The thermoelectric transport properties of a rectangular Aharonov-Bohm ring at low temperature are investigated using a theoretical approach based on Green's functions. The oscillations in the transmission coefficient as the field is varied can be used to tune the thermoelectric response of the ring. Large magnitude thermopowers are obtainable which, in conjunction with low conductance, can result in a high thermoelectric figure of merit. The effects of single site impurities and more general Anderson disorder are considered explicitly in the context of evaluating their effect on the Fano-type resonances in the transmission coefficient. Importantly, it is shown that even for moderate levels of disorder, the thermoelectric figure of merit can remain significant, increasing the appeal of such structures from the perspective of specialist thermoelectric applications.

Magnetic and thermoelectric properties of electron doped Ca{sub 0.85}Pr{sub 0.15}MnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Hossain Khan, Momin [Department of Physics, University of Kalyani, Kalyani 741235, West Bengal (India); Pal, Sudipta, E-mail: sudipta.pal@rediffmail.com [Department of Physics, University of Kalyani, Kalyani 741235, West Bengal (India); Bose, Esa [Department of Engineering Physics, B. P. P. I. M.T, Kolkata 700052, West Bengal (India)

2015-10-01

We have investigated temperature-dependent magnetization (M), magnetic susceptibility (χ) and thermoelectric (S) properties of the electron-doped Ca{sub 0.85}Pr{sub 0.15}MnO{sub 3}. With decrease of temperature, paramagnetic (PM) to antiferromagnetic (AFM) phase transition occurs with a well-defined Néel temperature (T{sub N}=122 K). Magnetic susceptibility measurements reveal that the paramagnetic state involves modified Curie–Weiss paramagnetism. Field cooled and zero field cooled magnetization measurements indicate a signature of magnetic frustration. Ferromagnetic (FM) double-exchange interactions associated with doped e{sub g} electrons are favored over competing AFM interactions below T{sub irr}=112 K. Magnetization data also shows a second-order phase transition. The sign reversal in S(T) has been interpreted in terms of the change in the electronic structure relating to the orbital degrees of freedom of the doped e{sub g} electron. Low temperature (5–140 K) thermoelectric power, S (T) signifies the importance of electron–magnon scattering process. - Highlights: • Magnetic and thermoelectric properties have been investigated in Ca{sub 0.85}Pr{sub 0.15}MnO{sub 3}. • It shows a PM–AFM second order phase transition at T{sub N}=122 K. • PM state involves modified Curie–Weiss paramagnetism. • The electron–magnon scattering dominates temperature dependent thermoelectric power.

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2

International Nuclear Information System (INIS)

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-01-01

Boron-added CoSi, CoSi_0_._9_8B_0_._0_2, possesses a very high thermoelectric power factor of 60 μW cm"−"1 K"−"2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Dynamic thermoelectricity in uniform bipolar semiconductor

Energy Technology Data Exchange (ETDEWEB)

Volovichev, I.N., E-mail: vin@ire.kharkov.ua

2016-07-01

The theory of the dynamic thermoelectric effect has been developed. The effect lies in an electric current flowing in a closed circuit that consists of a uniform bipolar semiconductor, in which a non-uniform temperature distribution in the form of the traveling wave is created. The calculations are performed for the one-dimensional model in the quasi-neutrality approximation. It was shown that the direct thermoelectric current prevails, despite the periodicity of the thermal excitation, the circuit homogeneity and the lack of rectifier properties of the semiconductor system. Several physical reasons underlining the dynamic thermoelectric effect are found. One of them is similar to the Dember photoelectric effect, its contribution to the current flowing is determined by the difference in the electron and hole mobilities, and is completely independent of the carrier Seebeck coefficients. The dependence of the thermoelectric short circuit current magnitude on the semiconductor parameters, as well as on the temperature wave amplitude, length and velocity is studied. It is shown that the magnitude of the thermoelectric current is proportional to the square of the temperature wave amplitude. The dependence of the thermoelectric short circuit current on the temperature wave length and velocity is the nonmonotonic function. The optimum values for the temperature wave length and velocity, at which the dynamic thermoelectric effect is the greatest, have been deduced. It is found that the thermoelectric short circuit current changes its direction with decreasing the temperature wave length under certain conditions. The prospects for the possible applications of the dynamic thermoelectric effect are also discussed.

The effect of a distinct diameter variation on the thermoelectric properties of individual Bi0.39Te0.61 nanowires

International Nuclear Information System (INIS)

Kojda, D; Mitdank, R; Fischer, S F; Mogilatenko, A; Töllner, W; Nielsch, K; Wang, Z; Kröner, M; Woias, P

2014-01-01

The reduction of the thermal conductivity induced by nano-patterning is one of the major approaches for tailoring thermoelectric material properties. In particular, the role of surface roughness and morphology is under debate. Here, we choose two individual bismuth telluride nanowires (NWs), one with a strong diameter variation between 190 nm and 320 nm (NW1) and the other of 187 nm diameter with smooth sidewalls (NW2). Both serve as model systems for which bulk properties are expected if surface properties do not contribute. We investigate the role of the diameter variation by means of a combined full-thermoelectrical, structural and chemical characterization. By transmission electron microscopy the structure, chemical composition and morphology were determined after the thermoelectrical investigation. The NWs showed an oriented growth along the [110] direction and the same composition. The Seebeck coefficients of both NWs are comparable to each other. The electrical conductivity of both NWs exceeds the bulk value indicating the presence of a topological surface state. Whereas the thermal conductivity of NW2 compares to the bulk, the thermal conductivity of NW1 is about half of NW2 which is discussed with respect to its distinct diameter variation. (invited article)

Hierarchical thermoelectrics : Crystal grain boundaries as scalable phonon scatterers

NARCIS (Netherlands)

Selli, Daniele; Boulfelfel, Salah Eddine; Schapotschnikow, PZ; Donadio, Davide; Leoni, Stefano

2016-01-01

Thermoelectric materials are strategically valuable for sustainable development, as they allow for the generation of electrical energy from wasted heat. In recent years several strategies have demonstrated some efficiency in improving thermoelectric properties. Dopants affect carrier

Development of thermoelectric power generation system utilizing heat of combustible solid waste

International Nuclear Information System (INIS)

Kajikawa, T.; Ito, M.; Katsube, I.; Shibuya, E.

1994-01-01

The paper presents the development of thermoelectric power generation system utilizing heat of municipal solid waste. The systematic classification and design guideline are proposed in consideration of the characteristics of solid waste processing system. The conceptual design of thermoelectric power generation system is carried out for a typical middle scale incinerator system (200 ton/day) by the local model. Totally the recovered electricity is 926.5 kWe by 445 units (569,600 couples). In order to achieve detailed design, one dimensional steady state model taking account of temperature dependency of the heat transfer performance and thermoelectric properties is developed. Moreover, small scale on-site experiment on 60 W class module installed in the real incinerator is carried out to extract various levels of technological problems. In parallel with the system development, high temperature thermoelectric elements such as Mn-Si and so on are developed aiming the optimization of ternary compound and high performance due to controlled fine-grain boundary effect. The manganese silicide made by shrinking-rate controlled sintering method performs 5 (μW/cm K2) in power factor at 800 K. copyright 1995 American Institute of Physics

Thermoelectric properties of periodic quantum structures in the Wigner-Rode formalism

Science.gov (United States)

Kommini, Adithya; Aksamija, Zlatan

2018-01-01

Improving the thermoelectric Seebeck coefficient, while simultaneously reducing thermal conductivity, is required in order to boost thermoelectric (TE) figure of merit (ZT). A common approach to improve the Seebeck coefficient is electron filtering where ‘cold’ (low energy) electrons are restricted from participating in transport by an energy barrier (Kim and Lundstrom 2011 J. Appl. Phys. 110 034511, Zide et al 2010 J. Appl. Phys. 108 123702). However, the impact of electron tunneling through thin barriers and resonant states on TE properties has been given less attention, despite the widespread use of quantum wells and superlattices (SLs) in TE applications. In our work, we develop a comprehensive transport model using the Wigner-Rode formalism. We include the full electronic bandstructure and all the relevant scattering mechanisms, allowing us to simulate both energy relaxation and quantum effects from periodic potential barriers. We study the impact of barrier shape on TE performance and find that tall, sharp barriers with small period lengths lead to the largest increase in both Seebeck coefficient and conductivity, thus boosting power factor and TE efficiency. Our findings are robust against additional elastic scattering such as atomic-scale roughness at side-walls of SL nanowires.

Thermoelectric properties of Al doped Mg{sub 2}Si material

Energy Technology Data Exchange (ETDEWEB)

Kaur, Kulwinder, E-mail: kulwindercmp@gmail.com; Kumar, Ranjan [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Rani, Anita [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India); Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India)

2015-08-28

In the present paper we have calculated thermoelectric properties of Al doped Mg{sub 2}Si material (Mg{sub 2−x}Al{sub x}Si, x=0.06) using Pseudo potential plane wave method based on DFT and Semi classical Boltzmann theory. The calculations showed n-type conduction, indicating that the electrical conduction are due to electron. The electrical conductivity increasing with increasing temperature and the negative value of Seebeck Coefficient also show that the conduction is due to electron. The thermal conductivity was increased slightly by Al doping with increasing temperature due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity.

Temperature dependent thermoelectric property of reduced graphene oxide-polyaniline composite

Energy Technology Data Exchange (ETDEWEB)

Mitra, Mousumi, E-mail: mousumimitrabesu@gmail.com; Banerjee, Dipali, E-mail: dipalibanerjeebesu@gmail.com [Department of Physics, Indian Institute of Engineering Science and Technology (IIEST), Howrah-711103 (India); Kargupta, Kajari, E-mail: karguptakajari2010@gmail.com [Department of Chemical Engineering, Jadavpur University, Kolkata (India); Ganguly, Saibal, E-mail: gangulysaibal2011@gmail.com [Chemical Engineering department, Universiti Teknologi Petronas, Perak, Tronoh (Malaysia)

2016-05-06

A composite material of reduced graphene oxide (rG) nanosheets with polyaniline (PANI) protonated by 5-sulfosalicylic acid has been synthesized via in situ oxidative polymerization method. The morphological and spectral characterizations have been done using FESEM and XRD measurements. The thermoelectric (TE) properties of the reduced graphene oxide-polyaniline composite (rG-P) has been studied in the temperature range from 300-400 K. The electrical conductivity and the Seebeck coefficient of rG-P is higher than the of pure PANI, while the thermal conductivity of the composite still keeps much low value ensuing an increase in the dimensionless figure of merit (ZT) in the whole temperature range.

Modeling a Thermoelectric Generator Applied to Diesel Automotive Heat Recovery

Science.gov (United States)

Espinosa, N.; Lazard, M.; Aixala, L.; Scherrer, H.

2010-09-01

Thermoelectric generators (TEGs) are outstanding devices for automotive waste heat recovery. Their packaging, lack of moving parts, and direct heat to electrical conversion are the main benefits. Usually, TEGs are modeled with a constant hot-source temperature. However, energy in exhaust gases is limited, thus leading to a temperature decrease as heat is recovered. Therefore thermoelectric properties change along the TEG, affecting performance. A thermoelectric generator composed of Mg2Si/Zn4Sb3 for high temperatures followed by Bi2Te3 for low temperatures has been modeled using engineering equation solver (EES) software. The model uses the finite-difference method with a strip-fins convective heat transfer coefficient. It has been validated on a commercial module with well-known properties. The thermoelectric connection and the number of thermoelements have been addressed as well as the optimum proportion of high-temperature material for a given thermoelectric heat exchanger. TEG output power has been estimated for a typical commercial vehicle at 90°C coolant temperature.

New thinking on modeling of thermoelectric devices

International Nuclear Information System (INIS)

Zhang, T.

2016-01-01

Highlights: • New model was developed for performance calculation of thermoelectric devices. • The model takes into account the temperature-dependent material properties. • It takes into account the spatial-dependent heat flow rate in thermoelement. • It can take into account the heat and electricity losses at the junctions. • It can probe a broad range of parameters for module performance optimization. - Abstract: The performance of a thermoelectric power generation (TEPG) module and a device designed to convert engine exhaust heat directly into electricity was studied under different operating conditions using a proposed thermoelectric (TE) model in this work. The proposed model was obtained from the first law of thermodynamics, Ohm’s law, nonlinear analytical solution of thermoelectric transport equation, and a control volume that represents a typical TEPG module or device such that the temperature-dependent material properties of, the spatial-dependent heat flow rate through the TE element, and the interfacial electrical and thermal losses can be taken into account in the performance calculation. The performance of a typical TEPG module under a broad range of cold-side temperatures and the temperature differences between its hot-side and cold-side was calculated by the proposed model and the results agree very well with the existing model predictions. Comparison between the model predictions and the experimental results confirmed that reducing the interfacial electric resistance can enhance the module performance. The inter-dependence of the key thermal and TEPG system design and optimization parameters was examined for a real TEPG device using the proposed model and an optimal module fill factor of 0.35 was found within the given mass flow rates between 0.0154 and 0.052 kg/s of exhaust stream.

Enhanced thermoelectric properties of polycrystalline Bi2Te3 core fibers with preferentially oriented nanosheets

Directory of Open Access Journals (Sweden)

Min Sun

2018-03-01

Full Text Available Bi2Te3-based materials have been reported to be one of the best room-temperature thermoelectric materials, and it is a challenge to substantially improve their thermoelectric properties. Here novel Bi2Te3 core fibers with borosilicate glass cladding were fabricated utilizing a modified molten core drawing method. The Bi2Te3 core of the fiber was found to consist of hexagonal polycrystalline nanosheets, and polycrystalline nanosheets had a preferential orientation; in other words, the hexagonal Bi2Te3 lamellar cleavage more tended to be parallel to the symmetry axis of the fibers. Compared with a homemade 3-mm-diameter Bi2Te3 rod, the polycrystalline nanosheets’ preferential orientation in the 89-μm-diameter Bi2Te3 core increased its electrical conductivity, but deduced its Seebeck coefficient. The Bi2Te3 core exhibits an ultrahigh ZT of 0.73 at 300 K, which is 232% higher than that of the Bi2Te3 rod. The demonstration of fibers with oriented nano-polycrystalline core and the integration with an efficient fabrication technique will pave the way for the fabrication of high-performance thermoelectric fibers.

Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

Science.gov (United States)

Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

THERMOELECTRIC PROPERTIES OF HOT-PRESSED p-TYPE Mg2Si0.3Sn0.7 SOLID SOLUTION

Directory of Open Access Journals (Sweden)

G. N. Isachenko

2014-05-01

Full Text Available It is shown that thermoelectric energy conversion which gives the possibility for utilizing a low potential heat is one of the ways for adoption of energy-saving technologies; and semiconductor materials with p-type and n-type conductivities having high thermoelectric figure of merit are necessary for operation of thermoelectric generators. The paper deals with possibility of usage of the p-Mg2Si0.3Sn0.7 solid solution (with a nanostructured modification as a couple for the well studied thermoelectric material based on n-Mg2Si-Mg2Sn. A technological scheme for fabrication of heavily doped Mg2Si0.3Sn0.7 solid solution of p-type by hot pressing from nanopowder is developed. The given technology has made it possible to reduce duration of a homogeneous material fabrication and has improved its physical and chemical properties. The samples were made by three ways: direct fusion for polycrystals fabrication; hot pressing from microparticles; nanostructuring, i.e. hot pressing from nanoparticles. By X-ray diffraction it is shown that sizes of structural elements in the fabricated samples are about 40 nm. The probe technique is used for measurement of electric conductivity and Seebeck coefficient. The stationary absolute method is used for measurement of thermal conductivity. Thermoelectric figure of merit is defined by measured values of kinetic coefficients in the temperatures range of 77 – 800 K. It was demonstrated, that electric conductivity, Seebeck coefficient and the power factor do not depend practically on a way of solid solution preparation. Thermal conductivity of samples pressed from nanoparticles has appeared to be higher, than of samples, obtained by direct fusion; i.e. in this case nanostructuring has not led to increase of thermoelectric figure of merit. The conclusion is drawn, that polycrystalline semiconductor Mg2Si0.3Sn0.7 can be used as a p-branch for a thermoelectric generator though nanostructuring has not led to the figure of

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te₃.

Science.gov (United States)

Hao, Feng; Qiu, Pengfei; Song, Qingfeng; Chen, Hongyi; Lu, Ping; Ren, Dudi; Shi, Xun; Chen, Lidong

2017-03-01

Recently, Cu-containing p-type Bi 0.5 Sb 1.5 Te₃ materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi 0.5 Sb 1.5 Te₃ is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi 0.5 Sb 1.5 Te₃ materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance-with a maximum thermoelectric figure of merit of around 1.4 at 430 K-has been achieved in Cu 0.005 Bi 0.5 Sb 1.495 Te₃, which is 70% higher than the Bi 0.5 Sb 1.5 Te₃ matrix.

Thermoelectric transport properties of high mobility organic semiconductors

Science.gov (United States)

Venkateshvaran, Deepak; Broch, Katharina; Warwick, Chris N.; Sirringhaus, Henning

2016-09-01

Transport in organic semiconductors has traditionally been investigated using measurements of the temperature and gate voltage dependent mobility of charge carriers within the channel of organic field-effect transistors (OFETs). In such measurements, the behavior of charge carrier mobility with temperature and gate voltage, studied together with carrier activation energies, provide a metric to quantify the extent of disorder within these van der Waals bonded materials. In addition to the mobility and activation energy, another potent but often-overlooked transport coefficient useful in understanding disorder is the Seebeck coefficient (also known as thermoelectric power). Fundamentally, the Seebeck coefficient represents the entropy per charge carrier in the solid state, and thus proves powerful in distinguishing materials in which charge carriers move freely from those where a high degree of disorder causes the induced carriers to remain trapped. This paper briefly covers the recent highlights in the field of organic thermoelectrics, showing how significant strides have been made both from an applied standpoint as well as from a viewpoint of fundamental thermoelectric transport physics. It shall be illustrated how thermoelectric transport parameters in organic semiconductors can be tuned over a significant range, and how this tunability facilitates an enhanced performance for heat-to-electricity conversion as well as quantifies energetic disorder and the nature of the density of states (DOS). The work of the authors shall be spotlighted in this context, illustrating how Seebeck coefficient measurements in the polymer indacenodithiophene-co-benzothiadiazole (IDTBT) known for its ultra-low degree of torsion within the polymer backbone, has a trend consistent with low disorder. 1 Finally, using examples of the small molecules C8-BTBT and C10-DNTT, it shall be discussed how the Seebeck coefficient can aid the estimation of the density and distribution of trap states

Synthesis and Characterization of Thermoelectric Oxides at Macro- and Nano-scales

Science.gov (United States)

Ma, Feiyue

Thermoelectric materials can directly convert a temperature difference into electrical voltage and vice versa. Due to this unique property, thermoelectric materials are widely used in industry and scientific laboratories for temperature sensing and thermal management applications. Waste heat harvesting, another potential application of thermoelectric materials, has long been limited by the low conversion efficiency of the materials. Potential high temperature applications, such as power plant waste heat harvesting and combustion engine exhaust heat recovery, make thermoelectric oxides a very promising class of thermoelectric materials. In this thesis, the synthesis and characterization of thermoelectric oxide materials are explored. In the first part of this thesis, the measurement methodologies and instrumentation processes employed to investigate different thermoelectric properties, such as the Seebeck coefficient and carrier concentration at the bulk scale and the thermal conductivity at the nanoscale, are detailed. Existing scientific and engineering challenges associated with these measurements are also reviewed. To overcome such problems, original parts and methodologies have been designed. Three fully functional systems were ultimately developed for the characterization of macroscale thermoelectric properties as well as localized thermal conductivity. In the second part of the thesis, the synthesis of NaxCo 2O4, a thermoelectric oxide material, is discussed. Modification of both composition and structure were carried out so as to optimize the thermoelectric performance of NaxCo2O4. Nanostructuring methods, such as ball milling, electrospinning, auto-combustion synthesis, and core-shell structure fabrication, have been developed to refine the grain size of NaxCo2O4 in order to reduce its thermal conductivity. However, the structure of the nanostructured materials is very unstable at high temperature and limited improvement on thermoelectric performance is

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02}

Energy Technology Data Exchange (ETDEWEB)

Sun, Hui, E-mail: huisun3@iflytek.com [Department of Basic Teaching, Anhui Institute of Information Technology, Wuhu, Anhui 241000 (China); Lu, Xu [College of Physics, Chongqing University, Chongqing 401331 (China); Morelli, Donald T. [Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824 (United States)

2016-07-21

Boron-added CoSi, CoSi{sub 0.98}B{sub 0.02}, possesses a very high thermoelectric power factor of 60 μW cm{sup −1} K{sup −2} at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02} has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Thermoelectric transport in rare-earth compounds

Energy Technology Data Exchange (ETDEWEB)

Koehler, Ulrike

2007-07-01

This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce{sub 3}Rh{sub 4}Sn{sub 13} are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu{sub 1-x}Yb{sub x}Rh{sub 2}Si{sub 2} and Ce{sub x}La{sub 1-x}Ni{sub 2}Ge{sub 2} by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

Nano-Micro Materials Enabled Thermoelectricity From Window Glasses

KAUST Repository

Inayat, Salman Bin

2012-11-03

With growing world population and decreasing fossil fuel reserves we need to explore and utilize variety of renewable and clean energy sources to meet the imminent challenge of energy crisis. Solar energy is considered as the leading promising alternate energy source with the pertinent challenge of off sunshine period and uneven worldwide distribution of usable sun light. Although thermoelectricity is considered as a reasonable energy harvester from wasted heat, its mass scale usage is yet to be developed. By transforming window glasses into generators of thermoelectricity, this doctoral work explores engineering aspects of using the temperature gradient between the hot outdoor heated by the sun and the relatively cold indoor of a building for mass scale energy generation. In order to utilize the two counter temperature environments simultaneously, variety of techniques, including: a) insertion of basic metals like copper and nickel wire, b) sputtering of thermoelectric films on side walls of individual glass strips to form the thickness depth of the glass on subsequent curing of the strips, and c) embedding nano-manufactured thermoelectric pillars, have been implemented for innovative integration of thermoelectric materials into window glasses. The practical demonstration of thermoelectric windows has been validated using a finite element model to predict the behavior of thermoelectric window under variety of varying conditions. MEMS based characterization platform has been fabricated for thermoelectric characterization of thin films employing van der Pauw and four probe modules. Enhancement of thermoelectric properties of the nano- manufactured pillars due to nano-structuring, achieved through mechanical alloying of micro-sized thermoelectric powders, has been explored. Modulation of thermoelectric properties of the nano-structured thermoelectric pillars by addition of sulfur to nano-powder matrix has also been investigated in detail. Using the best possible p

Controlling the thermoelectric effect by mechanical manipulation of the electron's quantum phase in atomic junctions.

Science.gov (United States)

Aiba, Akira; Demir, Firuz; Kaneko, Satoshi; Fujii, Shintaro; Nishino, Tomoaki; Tsukagoshi, Kazuhito; Saffarzadeh, Alireza; Kirczenow, George; Kiguchi, Manabu

2017-08-11

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

Effective thermal conductivity in thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Baranowski, LL; Snyder, GJ; Toberer, ES

2013-05-28

Thermoelectric generators (TEGs) are solid state heat engines that generate electricity from a temperature gradient. Optimizing these devices for maximum power production can be difficult due to the many heat transport mechanisms occurring simultaneously within the TEG. In this paper, we develop a model for heat transport in thermoelectric materials in which an "effective thermal conductivity" (kappa(eff)) encompasses both the one dimensional steady-state Fourier conduction and the heat generation/consumption due to secondary thermoelectric effects. This model is especially powerful in that the value of kappa(eff) does not depend upon the operating conditions of the TEG but rather on the transport properties of the TE materials themselves. We analyze a variety of thermoelectric materials and generator designs using this concept and demonstrate that kappa(eff) predicts the heat fluxes within these devices to 5% of the exact value. (C) 2013 AIP Publishing LLC.

A Chemical, High-Temperature Way to Ag1.9Te via Quasi-Topotactic Reaction of Stuetzite-type Ag1.54Te: Structural and Thermoelectric Properties.

Science.gov (United States)

Baumer, Franziska; Nilges, Tom

2017-11-20

Semiconducting silver tellurides gained reasonable interest in the past years due to its thermoelectric, magneto-caloric, and nonlinear optic properties. Nanostructuring has been frequently used to address quantum-confinement effects of minerals and synthetic compounds in the Ag-Te system. Here, we report on the structural, thermal, and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te. By a quasi-topotactic reaction upon tellurium evaporation Ag 1.54 Te can be transferred to Ag 1.9 Te after heat treatment. Crystal structures, thermal and thermoelectric properties of stuetzite-like Ag 1.54 Te (or Ag 4.63 Te 3 ) and Ag 1.9 Te were determined by ex situ and in situ experiments. This method represents an elegant chemical way to Ag 1.9 Te, which was so far only accessible electrochemically via electrochemical removal of silver from the mineral hessite (Ag 2 Te). The mixed conductors show reasonable high total electric conductivities, very low thermal conductivities, and large Seebeck coefficients, which result in a significant high thermoelectric figure of 0.57 at 680 K.

Designing high-Performance layered thermoelectric materials through orbital engineering

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Madsen, Georg K. H.

2016-01-01

Thermoelectric technology, which possesses potential application in recycling industrial waste heat as energy, calls for novel high-performance materials. The systematic exploration of novel thermoelectric materials with excellent electronic transport properties is severely hindered by limited...... insight into the underlying bonding orbitals of atomic structures. Here we propose a simple yet successful strategy to discover and design high-performance layered thermoelectric materials through minimizing the crystal field splitting energy of orbitals to realize high orbital degeneracy. The approach...... naturally leads to design maps for optimizing the thermoelectric power factor through forming solid solutions and biaxial strain. Using this approach, we predict a series of potential thermoelectric candidates from layered CaAl2Si2-type Zintl compounds. Several of them contain nontoxic, low-cost and earth...

Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers

KAUST Repository

Pu, Jiang; Kanahashi, Kaito; Cuong, Nguyen Thanh; Chen, Chang-Hsiao; Li, Lain-Jong; Okada, Susumu; Ohta, Hiromichi; Takenobu, Taishi

2016-01-01

The carrier-density-dependent conductance and thermoelectric properties of large-area MoS2 and WSe2 monolayers are simultaneously investigated using the electrolyte gating method. The sign of the thermoelectric power changes across the transistor

Improvement of thermoelectric properties for half-Heusler TiNiSn by interstitial Ni defects

International Nuclear Information System (INIS)

Hazama, Hirofumi; Matsubara, Masato; Asahi, Ryoji; Takeuchi, Tsunehiro

2011-01-01

We have synthesized off-stoichiometric Ti-Ni-Sn half-Heusler thermoelectrics in order to investigate the relation between randomly distributed defects and thermoelectric properties. A small change in the composition of Ti-Ni-Sn causes a remarkable change in the thermal conductivity. An excess content of Ni realizes a low thermal conductivity of 2.93 W/mK at room temperature while keeping a high power factor. The low thermal conductivity originates in the defects generated by an excess content of Ni. To investigate the detailed defect structure, we have performed first-principles calculations and compared with x ray photoemission spectroscopy measurement. Based on these analyses, we conclude that the excess Ni atoms randomly occupy the vacant sites in the half-Heusler structure, which play as phonon scattering centers, resulting in significant improvement of the figure of merit without any substitutions of expensive heavy elements, such as Zr and Hf.

Methods of synthesizing thermoelectric materials

Science.gov (United States)

Ren, Zhifeng; Chen, Shuo; Liu, Wei-Shu; Wang, Hengzhi; Wang, Hui; Yu, Bo; Chen, Gang

2016-04-05

Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

Thermoelectric Energy Conversion: Materials, Devices, and Systems

International Nuclear Information System (INIS)

Chen, Gang

2015-01-01

This paper will present a discussion of challenges, progresses, and opportunities in thermoelectric energy conversion technology. We will start with an introduction to thermoelectric technology, followed by discussing advances in thermoelectric materials, devices, and systems. Thermoelectric energy conversion exploits the Seebeck effect to convert thermal energy into electricity, or the Peltier effect for heat pumping applications. Thermoelectric devices are scalable, capable of generating power from nano Watts to mega Watts. One key issue is to improve materials thermoelectric figure- of-merit that is linearly proportional to the Seebeck coefficient, the square of the electrical conductivity, and inversely proportional to the thermal conductivity. Improving the figure-of-merit requires good understanding of electron and phonon transport as their properties are often contradictory in trends. Over the past decade, excellent progresses have been made in the understanding of electron and phonon transport in thermoelectric materials, and in improving existing and identify new materials, especially by exploring nanoscale size effects. Taking materials to real world applications, however, faces more challenges in terms of materials stability, device fabrication, thermal management and system design. Progresses and lessons learnt from our effort in fabricating thermoelectric devices will be discussed. We have demonstrated device thermal-to-electrical energy conversion efficiency ∼10% and solar-thermoelectric generator efficiency at 4.6% without optical concentration of sunlight (Figure 1) and ∼8-9% efficiency with optical concentration. Great opportunities exist in advancing materials as well as in using existing materials for energy efficiency improvements and renewable energy utilization, as well as mobile applications. (paper)

Thinking Like a Chemist: Intuition in Thermoelectric Materials.

Science.gov (United States)

Zeier, Wolfgang G; Zevalkink, Alex; Gibbs, Zachary M; Hautier, Geoffroy; Kanatzidis, Mercouri G; Snyder, G Jeffrey

2016-06-06

The coupled transport properties required to create an efficient thermoelectric material necessitates a thorough understanding of the relationship between the chemistry and physics in a solid. We approach thermoelectric material design using the chemical intuition provided by molecular orbital diagrams, tight binding theory, and a classic understanding of bond strength. Concepts such as electronegativity, band width, orbital overlap, bond energy, and bond length are used to explain trends in electronic properties such as the magnitude and temperature dependence of band gap, carrier effective mass, and band degeneracy and convergence. The lattice thermal conductivity is discussed in relation to the crystal structure and bond strength, with emphasis on the importance of bond length. We provide an overview of how symmetry and bonding strength affect electron and phonon transport in solids, and how altering these properties may be used in strategies to improve thermoelectric performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic structure and thermoelectric transport properties of the golden Th2S3-type Ti2O3 under pressure

Directory of Open Access Journals (Sweden)

Bin Xu

2016-05-01

Full Text Available A lot of physical properties of Th2S3-type Ti2O3 have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30GP to 35GP, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease with increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.

Thermoelectric Properties of Hot-Pressed and PECS-Sintered Magnesium-Doped Copper Aluminum Oxide

Science.gov (United States)

Liu, Chang; Morelli, Donald T.

2011-05-01

Copper aluminum oxide (CuAlO2) is considered as a potential candidate for thermoelectric applications. Partially magnesium-doped CuAlO2 bulk pellets were fabricated using solid-state reactions, hot-pressing, and pulsed electric current sintering (PECS) techniques. X-ray diffraction and scanning electron microscopy were adopted for structural analysis. High-temperature transport property measurements were performed on hot-pressed samples. Electrical conductivity increased with Mg doping before secondary phases became significant, while the Seebeck coefficient displayed the opposite trend. Thermal conductivity was consistently reduced as the Mg concentration increased. Effects of Mg doping, preparation conditions, and future modification on this material's properties are discussed.

Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Schindler, J L; Hogan, T P; Brazis, P W; Kannewurf, C R; Chung, D Y; Kanatzidis, M G

1997-07-01

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi{sub 4}Te{sub 6} have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of {approx}+110 {micro}V/K at room temperature. A second compound, {beta}-K{sub 2}Bi{sub 8}Se{sub 13} shows lower conductivity {approx}240 S/cm, but a larger n-type thermopower {approx}{minus}200 {micro}V/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi{sub 2}Te{sub 3}. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi{sub 4}Te{sub 6} reaches ZT {approx} 0.32 at 260 K and for {beta}-K{sub 2}Bi{sub 8}Se{sub 13} ZT {approx} 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

The thermoelectric figure of merit of poor thermal conductors

International Nuclear Information System (INIS)

Dixon, A.J.

1977-01-01

Calculations are given to show that for low thermal conductivity materials the radiation losses at even moderate temperatures preclude the use of the Harman technique for measuring the thermoelectric figure of merit. Measurements on liquid Tl 66 Se 34 , which has suitable thermoelectric properties, confirm this. (author)

The Effect of (Ag, Ni, Zn)-Addition on the Thermoelectric Properties of Copper Aluminate

DEFF Research Database (Denmark)

Yanagiya, Shun-ichi; Van Nong, Ngo; Xu, Jianxiao Jackie

2010-01-01

Polycrystalline bulk copper aluminate Cu1-x-yAgxByAlO2 with B = Ni or Zn were prepared by spark plasma sintering and subsequent thermal treatment. The influence of partial substitution of Ag, Ni and Zn for Cu-sites in CuAlO2 on the high temperature thermoelectric properties has been studied......, indicating a significant improvement compared with the non-doped CuAlO2 sample...

Thermoelectric properties and microstructure of Mg3Sb2

International Nuclear Information System (INIS)

Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

2006-01-01

Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

High thermoelectric performance of graphite nanofibers.

Science.gov (United States)

Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

2018-02-22

Graphite nanofibers (GNFs) have been demonstrated to be a promising material for hydrogen storage and heat management in electronic devices. Here, by means of first-principles and transport simulations, we show that GNFs can also be an excellent material for thermoelectric applications thanks to the interlayer weak van der Waals interaction that induces low thermal conductance and a step-like shape in the electronic transmission with mini-gaps, which are necessary ingredients to achieve high thermoelectric performance. This study unveils that the platelet form of GNFs in which graphite layers are perpendicular to the fiber axis can exhibit outstanding thermoelectric properties with a figure of merit ZT reaching 3.55 in a 0.5 nm diameter fiber and 1.1 in a 1.1 nm diameter one. Interestingly, by introducing 14 C isotope doping, ZT can even be enhanced up to more than 5, and more than 8 if we include the effect of finite phonon mean free path, which demonstrates the amazing thermoelectric potential of GNFs.

Microstructure and thermoelectric properties of screen-printed thick-films of misfit-layered cobalt oxides with Ag addition

DEFF Research Database (Denmark)

Van Nong, Ngo; Samson, Alfred Junio; Pryds, Nini

2012-01-01

Thermoelectric properties of thick (~60 μm) films prepared by a screen-printing technique using p-type misfit-layered cobalt oxide Ca3Co4O9+δ with Ag addition have been studied. The screen-printed films were sintered in air at various temperatures ranging from 973 K to 1223 K. After each sintering...... process, crystal and microstructure analyses were carried out to determine the optimal sintering condition. The results show that the thermoelectric properties of pure Ca3Co4O9+δ thick film are comparable to those of cold isostatic pressing (CIP) samples. We found that the maximum power factor...... was improved by about 67% (to 0.3 mW/m K2) for film with proper silver (Ag) metallic inclusions as compared with 0.18 mW/m K2 for pure Ca3Co4O9+δ film under the same sintering condition of 1223 K for 2 h in air....

Study for material analogs of FeSb2: Material design for thermoelectric materials

Science.gov (United States)

Kang, Chang-Jong; Kotliar, Gabriel

2018-03-01

Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

Fine Art of Thermoelectricity.

Science.gov (United States)

Brus, Viktor V; Gluba, Marc; Rappich, Jörg; Lang, Felix; Maryanchuk, Pavlo D; Nickel, Norbert H

2018-02-07

A detailed study of hitherto unknown electrical and thermoelectric properties of graphite pencil traces on paper was carried out by measuring the Hall and Seebeck effects. We show that the combination of pencil-drawn graphite and brush-painted poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films on regular office paper results in extremely simple, low-cost, and environmentally friendly thermoelectric power generators with promising output characteristics at low-temperature gradients. The working characteristics can be improved even further by incorporating n-type InSe flakes. The combination of pencil-drawn n-InSe:graphite nanocomposites and brush-painted PEDOT:PSS increases the power output by 1 order of magnitude.

Structure and thermoelectric property of Te doped paracostibite CoSb1-xTexS compounds

Science.gov (United States)

You, Yonghui; Su, Xianli; Liu, Wei; Yan, Yonggao; Fu, Jiefei; Cheng, Xin; Zhang, Cheng; Tang, Xinfeng

2018-06-01

Paracostibite (CoSbS), a newly developed thermoelectric material, has aroused lots of interest due to its highly earth abundant and inexpensive constituent elements and potential application for thermoelectric power generation in the intermediate temperature range. Herein, a series of CoSb1-xTexS (x = 0-0.09) compounds were prepared by vacuum melting and annealing followed by SPS processing, and the effects of Te doping on the structure and thermoelectric properties were systematically investigated. Doping Te on the Sb site increases the carrier concentration up to 7.24 × 1020 cm-3 for CoSb0.93Te0.07S compound which is several orders of magnitude higher than that of un-doped CoSbS, and enhances the power factor. The maximum power factor of 14.07 μW cm-1 K-2 is attained at 900 K. Concomitantly, doping with Te on the Sb site leads to effective scattering of heat carrying phonon, accompanying with a strong suppression of the thermal conductivity with the increase of Te content, resulting in an increase of the ZT. A maximum ZT of 0.43 at 900 K is attained for CoSb0.93Te0.07S compound, which is 139% higher than that of un-doped CoSbS compound.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

Directory of Open Access Journals (Sweden)

Feng Hao

2017-03-01

Full Text Available Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix.

Yb14MnSb11 as a High-Efficiency Thermoelectric Material

Science.gov (United States)

Snyder, G. Jeffrey; Gascoin, Franck; Brown, Shawna; Kauzlarich, Susan

2009-01-01

Yb14MnSb11 has been found to be wellsuited for use as a p-type thermoelectric material in applications that involve hotside temperatures in the approximate range of 1,200 to 1,300 K. The figure of merit that characterizes the thermal-to-electric power-conversion efficiency is greater for this material than for SiGe, which, until now, has been regarded as the state-of-the art high-temperature ptype thermoelectric material. Moreover, relative to SiGe, Yb14MnSb11 is better suited to incorporation into a segmented thermoelectric leg that includes the moderate-temperature p-type thermoelectric material CeFe4Sb12 and possibly other, lower-temperature p-type thermoelectric materials. Interest in Yb14MnSb11 as a candidate high-temperature thermoelectric material was prompted in part by its unique electronic properties and complex crystalline structure, which place it in a class somewhere between (1) a class of semiconducting valence compounds known in the art as Zintl compounds and (2) the class of intermetallic compounds. From the perspective of chemistry, this classification of Yb14MnSb11 provides a first indication of a potentially rich library of compounds, the thermoelectric properties of which can be easily optimized. The concepts of the thermoelectric figure of merit and the thermoelectric compatibility factor are discussed in Compatibility of Segments of Thermo - electric Generators (NPO-30798), which appears on page 55. The traditional thermoelectric figure of merit, Z, is defined by the equation Z = alpha sup 2/rho K, where alpha is the Seebeck coefficient, rho is the electrical resistivity, and k is the thermal conductivity.

Effect of Printing Parameters on Tensile, Dynamic Mechanical, and Thermoelectric Properties of FDM 3D Printed CABS/ZnO Composites

Directory of Open Access Journals (Sweden)

Yah Yun Aw

2018-03-01

Full Text Available Fused deposition modelling (FDM has been widely used in medical appliances, automobile, aircraft and aerospace, household appliances, toys, and many other fields. The ease of processing, low cost and high flexibility of FDM technique are strong advantages compared to other techniques for thermoelectric polymer composite fabrication. This research work focuses on the effect of two crucial printing parameters (infill density and printing pattern on the tensile, dynamic mechanical, and thermoelectric properties of conductive acrylonitrile butadiene styrene/zinc oxide (CABS/ZnO composites fabricated by FDM technique. Results revealed significant improvement in tensile strength and Young’s modulus, with a decrease in elongation at break with infill density. Improvement in dynamic storage modulus was observed when infill density changed from 50% to 100%. However, the loss modulus and damping factor reduced gradually. The increase of thermal conductivity was relatively smaller compared to the improvement of electrical conductivity and Seebeck coefficient, therefore, the calculated figure of merit (ZT value increased with infill density. Line pattern performed better than rectilinear, especially in tensile properties and electrical conductivity. From the results obtained, FDM-fabricated CABS/ZnO showed much potential as a promising candidate for thermoelectric application.

Effect of Printing Parameters on Tensile, Dynamic Mechanical, and Thermoelectric Properties of FDM 3D Printed CABS/ZnO Composites.

Science.gov (United States)

Aw, Yah Yun; Yeoh, Cheow Keat; Idris, Muhammad Asri; Teh, Pei Leng; Hamzah, Khairul Amali; Sazali, Shulizawati Aqzna

2018-03-22

Fused deposition modelling (FDM) has been widely used in medical appliances, automobile, aircraft and aerospace, household appliances, toys, and many other fields. The ease of processing, low cost and high flexibility of FDM technique are strong advantages compared to other techniques for thermoelectric polymer composite fabrication. This research work focuses on the effect of two crucial printing parameters (infill density and printing pattern) on the tensile, dynamic mechanical, and thermoelectric properties of conductive acrylonitrile butadiene styrene/zinc oxide (CABS/ZnO composites fabricated by FDM technique. Results revealed significant improvement in tensile strength and Young's modulus, with a decrease in elongation at break with infill density. Improvement in dynamic storage modulus was observed when infill density changed from 50% to 100%. However, the loss modulus and damping factor reduced gradually. The increase of thermal conductivity was relatively smaller compared to the improvement of electrical conductivity and Seebeck coefficient, therefore, the calculated figure of merit (ZT) value increased with infill density. Line pattern performed better than rectilinear, especially in tensile properties and electrical conductivity. From the results obtained, FDM-fabricated CABS/ZnO showed much potential as a promising candidate for thermoelectric application .

Thermoelectric properties of an interacting quantum dot based heat engine

Science.gov (United States)

Erdman, Paolo Andrea; Mazza, Francesco; Bosisio, Riccardo; Benenti, Giuliano; Fazio, Rosario; Taddei, Fabio

2017-06-01

We study the thermoelectric properties and heat-to-work conversion performance of an interacting, multilevel quantum dot (QD) weakly coupled to electronic reservoirs. We focus on the sequential tunneling regime. The dynamics of the charge in the QD is studied by means of master equations for the probabilities of occupation. From here we compute the charge and heat currents in the linear response regime. Assuming a generic multiterminal setup, and for low temperatures (quantum limit), we obtain analytical expressions for the transport coefficients which account for the interplay between interactions (charging energy) and level quantization. In the case of systems with two and three terminals we derive formulas for the power factor Q and the figure of merit Z T for a QD-based heat engine, identifying optimal working conditions which maximize output power and efficiency of heat-to-work conversion. Beyond the linear response we concentrate on the two-terminal setup. We first study the thermoelectric nonlinear coefficients assessing the consequences of large temperature and voltage biases, focusing on the breakdown of the Onsager reciprocal relation between thermopower and Peltier coefficient. We then investigate the conditions which optimize the performance of a heat engine, finding that in the quantum limit output power and efficiency at maximum power can almost be simultaneously maximized by choosing appropriate values of electrochemical potential and bias voltage. At last we study how energy level degeneracy can increase the output power.

Investigation of the correlation between stoichiometry and thermoelectric properties in a PtSb2 single crystal

DEFF Research Database (Denmark)

Søndergaard, Martin; Christensen, Mogens; Bjerg, Lasse

2012-01-01

utilizing X-Ray Diffraction and Energy Dispersive X-Ray Spectroscopy. The correlation between Pt/Sb ratio and physical property parameters - Seebeck coefficient, mobility, resistivity and charge carrier concentration - was studied. Elemental analysis by Energy Dispersive X-Ray Spectroscopy, X......The thermoelectric properties of a PtSb2 single crystal containing a stoichiometric gradient were investigated. The gradient was produced by employing a Stockbarger synthesis technique. The gradient was observed through the use of spatial resolved Seebeck coefficient measurements and verified...

A review of thermoelectric cooling: Materials, modeling and applications

International Nuclear Information System (INIS)

Zhao, Dongliang; Tan, Gang

2014-01-01

This study reviews the recent advances of thermoelectric materials, modeling approaches, and applications. Thermoelectric cooling systems have advantages over conventional cooling devices, including compact in size, light in weight, high reliability, no mechanical moving parts, no working fluid, being powered by direct current, and easily switching between cooling and heating modes. In this study, historical development of thermoelectric cooling has been briefly introduced first. Next, the development of thermoelectric materials has been given and the achievements in past decade have been summarized. To improve thermoelectric cooling system's performance, the modeling techniques have been described for both the thermoelement modeling and thermoelectric cooler (TEC) modeling including standard simplified energy equilibrium model, one-dimensional and three-dimensional models, and numerical compact model. Finally, the thermoelectric cooling applications have been reviewed in aspects of domestic refrigeration, electronic cooling, scientific application, and automobile air conditioning and seat temperature control, with summaries for the commercially available thermoelectric modules and thermoelectric refrigerators. It is expected that this study will be beneficial to thermoelectric cooling system design, simulation, and analysis. - Highlights: •Thermoelectric cooling has great prospects with thermoelectric material's advances. •Modeling techniques for both thermoelement and TEC have been reviewed. •Principle thermoelectric cooling applications have been reviewed and summarized

Interfacial reactions in thermoelectric modules

KAUST Repository

Wu, Hsin-jay; Wu, Albert T.; Wei, Pei-chun; Chen, Sinn-wen

2018-01-01

Engineering transport properties of thermoelectric (TE) materials leads to incessantly breakthroughs in the zT values. Nevertheless, modular design holds a key factor to advance the TE technology. Herein, we discuss the structures of TE module

Correlated evolution of colossal thermoelectric effect and Kondo insulating behavior

Directory of Open Access Journals (Sweden)

M. K. Fuccillo

2013-12-01

Full Text Available We report the magnetic and transport properties of the Ru1−xFexSb2 solid solution, showing how the colossal thermoelectric performance of FeSb2 evolves due to changes in the amount of 3d vs. 4d electron character. The physical property trends shed light on the physical picture underlying one of the best low-T thermoelectric power factors known to date. Some of the compositions warrant further study as possible n- and p-type thermoelements for Peltier cooling well below 300 K. Our findings enable us to suggest possible new Kondo insulating systems that might behave similarly to FeSb2 as advanced thermoelectrics.

Thermoelectric properties of ZnSb films grown by MOCVD

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Watko, E; Colpitts, T

1997-07-01

The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

Science.gov (United States)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Maximum Power Point Tracking Control of a Thermoelectric Generation System Using the Extremum Seeking Control Method

Directory of Open Access Journals (Sweden)

Ssennoga Twaha

2017-12-01

Full Text Available This study proposes and implements maximum power Point Tracking (MPPT control on thermoelectric generation system using an extremum seeking control (ESC algorithm. The MPPT is applied to guarantee maximum power extraction from the TEG system. The work has been carried out through modelling of thermoelectric generator/dc-dc converter system using Matlab/Simulink. The effectiveness of ESC technique has been assessed by comparing the results with those of the Perturb and Observe (P&O MPPT method under the same operating conditions. Results indicate that ESC MPPT method extracts more power than the P&O technique, where the output power of ESC technique is higher than that of P&O by 0.47 W or 6.1% at a hot side temperature of 200 °C. It is also noted that the ESC MPPT based model is almost fourfold faster than the P&O method. This is attributed to smaller MPPT circuit of ESC compared to that of P&O, hence we conclude that the ESC MPPT method outperforms the P&O technique.

Green thermoelectrics: Observation and analysis of plant thermoelectric response

Directory of Open Access Journals (Sweden)

Goupil Christophe

2016-01-01

Full Text Available Plants are sensitive to thermal and electrical effects; yet the coupling of both, known as thermoelectricity, and its quantitative measurement in vegetal systems never were reported. We recorded the thermoelectric response of bean sprouts under various thermal conditions and stress. The obtained experimental data unambiguously demonstrate that a temperature difference between the roots and the leaves of a bean sprout induces a thermoelectric voltage between these two points. Basing our analysis of the data on the force-flux formalism of linear response theory, we found that the strength of the vegetal equivalent to the thermoelectric coupling is one order of magnitude larger than that in the best thermoelectric materials. Experimental data also show the importance of the thermal stress variation rate in the plant’s electrophysiological response. therefore, thermoelectric effects are sufficiently important to partake in the complex and intertwined processes of energy and matter transport within plants.

Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

Energy Technology Data Exchange (ETDEWEB)

Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

2014-12-14

The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

Thermoelectric properties of Nd0.75Sr1.25CoO4 thin films

International Nuclear Information System (INIS)

Huang, S.L.; Ruan, K.Q.; Jiao, X.L.; Wu, H.Y.; Lv, Z.M.; Pang, Z.Q.; Liu, J.; Yang, H.S.; Wu, W.B.; Cao, L.Z.; Li, X.G.

2007-01-01

Temperature dependence of the electrical resistivity (ρ) and thermopower (S) in the ab-plane of Nd 0.75 Sr 1.25 CoO 4 thin films have been investigated systematically in the temperature range 70 K< T<310 K. The specimen presents a p-type semiconducting transport property. The S nearly keeps constant at high temperatures and decreases at low ones with an additional step-like decrease, which was argued to be intimately related with the magnetic properties of the specimen. The resistivity follows the Arrhenius law. And the large value of the power factor suggests the films may be a good candidate for the thermoelectric material

Significant enhancement of thermoelectric properties and metallization of Al-doped Mg2Si under pressure

International Nuclear Information System (INIS)

Morozova, Natalia V.; Korobeinikov, Igor V.; Karkin, Alexander E.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.; Takarabe, Ken-ichi; Mori, Yoshihisa; Nakamura, Shigeyuki

2014-01-01

We report results of investigations of electronic transport properties and lattice dynamics of Al-doped magnesium silicide (Mg 2 Si) thermoelectrics at ambient and high pressures to and beyond 15 GPa. High-quality samples of Mg 2 Si doped with 1 at. % of Al were prepared by spark plasma sintering technique. The samples were extensively examined at ambient pressure conditions by X-ray diffraction studies, Raman spectroscopy, electrical resistivity, magnetoresistance, Hall effect, thermoelectric power (Seebeck effect), and thermal conductivity. A Kondo-like feature in the electrical resistivity curves at low temperatures indicates a possible magnetism in the samples. The absolute values of the thermopower and electrical resistivity, and Raman spectra intensity of Mg 2 Si:Al dramatically diminished upon room-temperature compression. The calculated thermoelectric power factor of Mg 2 Si:Al raised with pressure to 2–3 GPa peaking in the maximum the values as high as about 8 × 10 −3 W/(K 2 m) and then gradually decreased with further compression. Raman spectroscopy studies indicated the crossovers near ∼5–7 and ∼11–12 GPa that are likely related to phase transitions. The data gathered suggest that Mg 2 Si:Al is metallized under moderate pressures between ∼5 and 12 GPa.

High temperature thermoelectric properties of p-type skutterudites BaxYbyCo4-zFezSb12

KAUST Repository

Dong, Y.

2012-01-01

Several polycrystalline p-type skutterudites with compositions Ba xYb yCo 4-zFe zSb 12, with varying filler concentrations x and y, and z = 1 to 2, were synthesized by reacting the constituents and subsequent solid state annealing, followed by densification by hot-pressing. Their thermoelectric properties were evaluated from 300 to 820 K. The Yb filling fraction increased with Fe content while the amount of Fe substitution had little influence on the Ba filling fraction. High purity specimens were obtained when the Fe content was low. Bipolar conduction contributed to the thermal conductivity at elevated temperatures. A maximum ZT value of 0.7 was obtained at 750 K for the specimen with the highest Fe content and filling fraction. The potential for thermoelectric applications is also discussed. © 2012 American Institute of Physics.

Effects of Fe3O4 Magnetic Nanoparticles on the Thermoelectric Properties of Heavy-Fermion YbAl3 Materials

Science.gov (United States)

He, Danqi; Mu, Xin; Zhou, Hongyu; Li, Cuncheng; Ma, Shifang; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

The magnetic nanocomposite thermoelectric materials xFe3O4/YbAl3 ( x = 0%, 0.3%, 0.6%, 1.0%, and 1.5%) have been prepared by the combination of ultrasonic dispersion and spark plasma sintering process. The nanocomposites retain good chemical stability in the presence of the second-phase Fe3O4. The second-phase Fe3O4 magnetic nanoparticles are distributed on the interfaces and boundaries of the matrix. The x dependences of thermoelectric properties indicate that Fe3O4 magnetic nanoparticles can significantly decrease the thermal conductivity and electrical conductivity. The magnetic nanoparticles embedded in YbAl3 matrix are not only the phonon scattering centers of nanostructures, but also the electron scattering centers due to the Kondo-like effect between the magnetic moment of Fe3O4 nanoparticles and the spin of electrons. The ZT values of the composites are first increased in the x range 0%-1.0% and then decreased when x > 1.0%. The highest ZT value reaches 0.3 at 300 K for the nanocomposite with x = 1.0%. Our work demonstrates that the Fe3O4 magnetic nanoparticles can greatly increase the thermoelectric performance of heavy-fermion YbAl3 thermoelectric materials through simultaneously scattering electrons and phonons.

Thermoelectric response of bulk and monolayer MoSe2 and WSe2

KAUST Repository

Sarath Kumar, S. R.

2015-02-24

We study the thermoelectric properties of bulk and monolayer MoSe2 and WSe2 by first-principles calculations and semiclassical Boltzmann transport theory. The lattice thermal conductivity is calculated using the self-consistent iterative approach as well as the single-mode relaxation time approximation. The acoustical and optical contributions to the lattice thermal conductivity are evaluated along with the influence of the phonon mean free path. The employed methodology enables a quantitative comparison of the thermoelectric properties of transition-metal dichalcogenides. In particular, WSe2 is found to be superior to MoSe2 for thermoelectric applications.

Thermoelectric response of bulk and monolayer MoSe2 and WSe2

KAUST Repository

Sarath Kumar, S. R.; Schwingenschlö gl, Udo

2015-01-01

We study the thermoelectric properties of bulk and monolayer MoSe2 and WSe2 by first-principles calculations and semiclassical Boltzmann transport theory. The lattice thermal conductivity is calculated using the self-consistent iterative approach as well as the single-mode relaxation time approximation. The acoustical and optical contributions to the lattice thermal conductivity are evaluated along with the influence of the phonon mean free path. The employed methodology enables a quantitative comparison of the thermoelectric properties of transition-metal dichalcogenides. In particular, WSe2 is found to be superior to MoSe2 for thermoelectric applications.

Numerical analysis of the performance prediction for a thermoelectric generator

Energy Technology Data Exchange (ETDEWEB)

Kim, Chang Nyung [Kyung Hee University, Yongin (Korea, Republic of)

2015-09-15

The present study develops a two-dimensional numerical code that can predict the performance of a thermoelectric generator module including a p-leg/n-leg pair and top and bottom electrodes. The present code can simulate the detailed thermoelectric phenomena including the heat flow, electric current, Joule heating, Peltier heating, and Thomson heating, together with the efficiency of the modules whose properties depend on the temperature. The present numerical code can be used for the design optimization of a thermoelectric power generator.

Thermoelectric Properties of Solution-Processed n-Doped Ladder-Type Conducting Polymers

DEFF Research Database (Denmark)

Wang, Suhao; Sun, Hengda; Ail, Ujwala

2016-01-01

Ladder-type "torsion-free" conducting polymers (e.g., polybenzimidazobenzophenanthroline (BBL)) can outperform "structurally distorted" donor-acceptor polymers (e.g., P(NDI2OD-T2)), in terms of conductivity and thermoelectric power factor. The polaron delocalization length is larger in BBL than...... in P(NDI2OD-T2), resulting in a higher measured polaron mobility. Structure-function relationships are drawn, setting material-design guidelines for the next generation of conducting thermoelectric polymers....

Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

Energy Technology Data Exchange (ETDEWEB)

Schmitz, Andreas

2013-04-30

The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while its thermoelectric

Lead telluride with increased mechanical stability for cylindrical thermoelectric generators; Bleitellurid mit erhoehter mechanischer Stabilitaet fuer zylindrische thermoelektrische Generatoren

Energy Technology Data Exchange (ETDEWEB)

Schmitz, Andreas

2013-04-30

The aim of this work is to improve the mechanical stability of lead telluride (PbTe), trying to vary its mechanical properties independently from its thermoelectric properties. Thus the influence of material preparation as well as different dopants on the mechanical and thermoelectric properties of lead telluride is being analysed. When using appropriately set process parameters, milling and sintering of lead telluride increases the material's hardness. With sintering temperatures exceeding 300 C stable material of high relative density can be achieved. Milling lead telluride generates lattice defects leading to a reduction of the material's charge carrier density. These defects can be reduced by increased sintering temperatures. Contamination of the powder due to the milling process leads to bloating during thermal cycling and thus reduced density of the sintered material. In addition to that, evaporation of tellurium at elevated temperatures causes instability of the material's thermoelectric properties. Based on the experimental results obtained in this work, the best thermoelectric and mechanical properties can be obtained by sintering coarse powders at around 400 C. Within this work a concept was developed to vary the mechanical properties of lead telluride via synthesis of PbTe with electrically nondoping elements, which thus may keep the thermoelectric properties unchanged. Therefore, the mechanical and thermoelectric properties of Pb{sub 1-x}Ca{sub x}Te were investigated. Doping pure PbTe with calcium causes a significant increase of the material's hardness while only slightly decreasing the charge carrier density and thus keeping the thermoelectric properties apart from a slight reduction of the electrical conductivity nearly unchanged. The abovementioned concept is proven using sodium doped lead telluride, as it is used for thermoelectric generators: The additional doping with calcium again increases the material's hardness while

High-Temperature High-Efficiency Solar Thermoelectric Generators

Energy Technology Data Exchange (ETDEWEB)

Baranowski, LL; Warren, EL; Toberer, ES

2014-03-01

Inspired by recent high-efficiency thermoelectric modules, we consider thermoelectrics for terrestrial applications in concentrated solar thermoelectric generators (STEGs). The STEG is modeled as two subsystems: a TEG, and a solar absorber that efficiently captures the concentrated sunlight and limits radiative losses from the system. The TEG subsystem is modeled using thermoelectric compatibility theory; this model does not constrain the material properties to be constant with temperature. Considering a three-stage TEG based on current record modules, this model suggests that 18% efficiency could be experimentally expected with a temperature gradient of 1000A degrees C to 100A degrees C. Achieving 15% overall STEG efficiency thus requires an absorber efficiency above 85%, and we consider two methods to achieve this: solar-selective absorbers and thermally insulating cavities. When the TEG and absorber subsystem models are combined, we expect that the STEG modeled here could achieve 15% efficiency with optical concentration between 250 and 300 suns.

Thermoelectric materials having porosity

Science.gov (United States)

Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

2014-08-05

A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Enhanced low-temperature thermoelectrical properties of BiTeCl grown by topotactic method

International Nuclear Information System (INIS)

Jacimovic, J.; Mettan, X.; Pisoni, A.; Gaal, R.; Katrych, S.; Demko, L.; Akrap, A.; Forro, L.; Berger, H.; Bugnon, P.; Magrez, A.

2014-01-01

We developed a topotactic strategy to grow BiTeCl single crystals. Structural characterization by means of X-ray diffraction was performed, and the high crystallinity of the material was proven. Measurements of the thermoelectrical coefficients electrical resistivity, thermoelectric power and thermal conductivity show an enhanced room temperature power factor of 20 μW cm −1 K −2 . The high value of the figure of merit (ZT = 0.17) confirms that BiTeCl is a promising material for engineering in thermoelectric applications at low temperature

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO_2 with transition metal additions

International Nuclear Information System (INIS)

Music, Denis; Geyer, Richard W.; Hans, Marcus

2016-01-01

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO_2 with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m"−"1 K"−"2 for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO_2 and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

High performance p-type half-Heusler thermoelectric materials

Science.gov (United States)

Yu, Junjie; Xia, Kaiyang; Zhao, Xinbing; Zhu, Tiejun

2018-03-01

Half-Heusler compounds, which possess robust mechanical strength, good high temperature thermal stability and multifaceted physical properties, have been verified as a class of promising thermoelectric materials. During the last two decades, great progress has been made in half-Heusler thermoelectrics. In this review, we summarize some representative work of p-type half-Heusler materials, the thermoelectric performance of which has been remarkably enhanced in recent years. We introduce the features of the crystal and electronic structures of half-Heusler compounds, and successful strategies for optimizing electrical and thermal transport in the p-type RFeSb (R  =  V, Nb, Ta) and MCoSb (M  =  Ti, Zr, Hf) based systems, including band engineering, the formation of solid solutions and hierarchical phonon scattering. The outlook for future research directions of half-Heusler thermoelectrics is also presented.

Research Update: Phonon engineering of nanocrystalline silicon thermoelectrics

Directory of Open Access Journals (Sweden)

Junichiro Shiomi

2016-10-01

Full Text Available Nanocrystalline silicon thermoelectrics can be a solution to improve the cost-effectiveness of thermoelectric technology from both material and integration viewpoints. While their figure-of-merit is still developing, recent advances in theoretical/numerical calculations, property measurements, and structural synthesis/fabrication have opened up possibilities to develop the materials based on fundamental physics of phonon transport. Here, this is demonstrated by reviewing a series of works on nanocrystalline silicon materials using calculations of multiscale phonon transport, measurements of interfacial heat conduction, and synthesis from nanoparticles. Integration of these approaches allows us to engineer phonon transport to improve the thermoelectric performance by introducing local silicon-oxide structures.

High-temperature thermoelectric properties of La-doped BaSnO3 ceramics

International Nuclear Information System (INIS)

Yasukawa, Masahiro; Kono, Toshio; Ueda, Kazushige; Yanagi, Hiroshi; Hosono, Hideo

2010-01-01

To elucidate the thermoelectric properties at high temperatures, perovskite-type La-doped BaSnO 3 ceramics were fabricated by a polymerized complex (PC) method and subsequent spark plasma sintering (SPS) technique. Fine powders of Ba 1-x La x SnO 3 (x = 0.00-0.07) were prepared by the PC method using citrate complexes, and SPS treatment converted the powders into dense ceramics with relative densities of 93-97%. The La content dependence of the lattice parameter suggested that the solubility of La for Ba sites was approximately x = 0.03. The temperature dependence of the electrical conductivity σ and Seebeck coefficient S showed that each La-doped ceramic was an n-type degenerate semiconductor in the measured temperature range of 373-1073 K. The La content dependence of the S values indicated that the electron carrier concentration increased successively up to x = 0.03, which was the solubility limit of the La atoms. The thermoelectric power factors S 2 σ increased drastically with La doping, and reached a maximum for x = 0.01 with values of 0.8 x 10 -4 W m -1 K -2 at 373 K to 2.8 x 10 -4 W m -1 K -2 at 1073 K.

Exploring the thermoelectric and magnetic properties of uranium selenides: Tl{sub 2}Ag{sub 2}USe{sub 4} and Tl{sub 3}Cu{sub 4}USe{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Azam, Sikander; Khan, Saleem Ayaz [New Technologies – Research Center, University of West Bohemia, Univerzitni 8, 30614 Pilsen (Czech Republic); Din, Haleem Ud [Department of Physics, Hazara University, Mansehra (Pakistan); Khenata, Rabah [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, Mascara 29000 (Algeria); Goumri-Said, Souraya, E-mail: sosaid@alfaisal.edu [College of Science, Physics department, Alfaisal University, P.O. Box 50927, Riyadh 11533 (Saudi Arabia)

2016-09-01

The electronic, magnetic and thermoelectric properties of Tl{sub 2}Ag{sub 2}USe{sub 4} and Tl{sub 3}Cu{sub 4}USe{sub 6} compounds were investigated using the full potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). The exchange correlation was treated with the generalized gradient approximation plus optimized effective Hubbard parameter and spin–orbit coupling (GGA+U+SOC). The present uranium selenides show narrow direct energy band gap values of 0.7 and 0.875 eV for Tl{sub 2}Ag{sub 2}USe{sub 4} and Tl{sub 3}Cu{sub 4}USe{sub 6} respectively. For both selenides U-d/f states are responsible for electrical transport properties. Uranium atoms were the most contributors in the magnetic moment compared to other atoms and show ferromagnetic nature. The spin density isosurfaces show the polarization of neighboring atoms of Uranium, such as silver/copper and selenium. Thermoelectric calculations reveal that Tl{sub 3}Cu{sub 4}USe{sub 6} is more suitable for thermoelectric device applications than Tl{sub 2}Ag{sub 2}USe{sub 4}. - Highlights: • Electronic, magnetic and thermoelectric properties of uranium selenides are investigated with DFT. • They show a narrow direct energy band gap of 0.7 and 0.875 eV. • U-d/f states are responsible for electrical transport properties. • Tl{sub 3}Cu{sub 4}USe{sub 6} is more suitable for thermoelectric device applications than Tl{sub 2}Ag{sub 2}USe{sub 4}.

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

Science.gov (United States)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Enhanced thermoelectric property of oxygen deficient nickel doped SnO2 for high temperature application

Science.gov (United States)

Paulson, Anju; Sabeer, N. A. Muhammad; Pradyumnan, P. P.

2018-04-01

Motivated by the detailed investigation on the thermoelectric performance of oxide materials our work concentrated on the influence of acceptor dopants and defect density in the lattice plane for the enhancement of thermoelectric power. The series of Sn1‑x Nix O2 (0.01 ≤ x ≤ 0.05) compositions were prepared by solid state reaction mechanism and found that 3 atomic percentage Ni doped SnO2 can be considered as a good candidate due to its promising electrical and transport properties. Defect lattices were introduced in the sample and the deviation from oxygen stochiometry was ensured using photoluminescence measurement. High power factor was obtained for the 3 atomic percentage nickel doped SnO2 due to the effective number of charge carrier concentration and the depletion of oxygen rich layers. Defect centered and acceptor doped SnO2 lattice opens a new door for energy harvesting at higher temperatures.

Thermoelectric properties of fine-grained FeVSb half-Heusler alloys tuned to p-type by substituting vanadium with titanium

International Nuclear Information System (INIS)

Zou, Minmin; Li, Jing-Feng; Kita, Takuji

2013-01-01

Fine-grained Ti-doped FeVSb half-Heusler alloys were synthesized by combining mechanical alloying and spark plasma sintering and their thermoelectric properties were investigated with an emphasis on the influences of Ti doping and phase purity. It was found that substituting V with Ti can change the electrical transport behavior from n-type to p-type due to one less valence electron of Ti than V, and the sample with nominal composition FeV 0.8 Ti 0.4 Sb exhibits the largest Seebeck coefficient and the maximum power factor. By optimizing the sintering temperature and applying annealing treatment, the power factor is significantly improved and the thermal conductivity is reduced simultaneously, resulting in a ZT value of 0.43 at 500 °C, which is relatively high as for p-type half-Heusler alloys containing earth-abundant elements. - Graphical abstract: Fine-grained Ti-doped FeVSb alloys were prepared by the MA-SPS method. The maximum ZT value reaches 0.43 at 500 °C, which is relatively high for p-type half-Heusler alloys. Highlights: ► Ti-doped FeVSb half-Heusler alloys were synthesized by combining MA and SPS. ► Substituting V with Ti changes the electrical behavior from n-type to p-type. ► Thermoelectric properties are improved by optimizing sintering temperature. ► Thermoelectric properties are further improved by applying annealing treatment. ► A high ZT value of 0.43 is obtained at 500 °C for p-type Ti-doped FeVSb alloys.

Thermoelectric micro converters for cooling and energy-scavenging systems

International Nuclear Information System (INIS)

Goncalves, L M; Couto, C; Correia, J H; Alpuim, P

2008-01-01

This paper describes the fabrication process of thermoelectric microconverters, based on n-type bismuth telluride (Bi 2 Te 3 ) and p-type antimony telluride (Sb 2 Te 3 ) thin films. The films are fabricated by thermal co-evaporation with thermoelectric properties comparable to those reported for the same materials in bulk form (used in conventional macro-scale Peltier modules). The absolute value of the Seebeck coefficient in the range of 150–250 µV K −1 and an in-plane electrical resistivity of 7–15 µΩ m were obtained. The influence of fabrication parameters on thermoelectric properties is reported. The films were patterned by photolithography and wet-etching techniques, using HNO 3 /HCl-based etchants. The influence of composition and concentration of etchants in the lithographic process is reported. A microcooler was fabricated

WS2 as an excellent high-temperature thermoelectric material

KAUST Repository

Gandi, Appala; Schwingenschlö gl, Udo

2014-01-01

The potential of WS2 as a thermoelectric material is assessed. The electronic contribution to the thermoelectric properties is calculated within the constant relaxation time approximation from the electronic band structure, whereas the lattice contribution is evaluated using self-consistently calculated phonon lifetimes. In addition, the dependence of the lattice thermal conductivity on the mean free path of the phonons is determined.

WS2 as an excellent high-temperature thermoelectric material

KAUST Repository

Gandi, Appala

2014-11-25

The potential of WS2 as a thermoelectric material is assessed. The electronic contribution to the thermoelectric properties is calculated within the constant relaxation time approximation from the electronic band structure, whereas the lattice contribution is evaluated using self-consistently calculated phonon lifetimes. In addition, the dependence of the lattice thermal conductivity on the mean free path of the phonons is determined.

Thermoelectric effects in magnetic nanostructures

NARCIS (Netherlands)

Hatami, Moosa; Bauer, Gerrit E.W.; Zhang, Q.F.; Kelly, Paul J.

2009-01-01

We model and evaluate the Peltier and Seebeck effects in magnetic multilayer nanostructures by a finite-element theory of thermoelectric properties. We present analytical expressions for the thermopower and the current-induced temperature changes due to Peltier cooling/heating. The thermopower of a

Wearable thermoelectric generators for body-powered devices

NARCIS (Netherlands)

Leonov, V.; Vullers, R.J.M.

2009-01-01

This paper presents a discussion on energy scavenging for wearable devices in conjunction with human body properties. Motivation, analysis of the relevant properties of the human body, and results of optimization of a thermopile and a thermoelectric generator for wearable and portable devices are

Compatibility of Segments of Thermoelectric Generators

Science.gov (United States)

Snyder, G. Jeffrey; Ursell, Tristan

2009-01-01

A method of calculating (usually for the purpose of maximizing) the power-conversion efficiency of a segmented thermoelectric generator is based on equations derived from the fundamental equations of thermoelectricity. Because it is directly traceable to first principles, the method provides physical explanations in addition to predictions of phenomena involved in segmentation. In comparison with the finite-element method used heretofore to predict (without being able to explain) the behavior of a segmented thermoelectric generator, this method is much simpler to implement in practice: in particular, the efficiency of a segmented thermoelectric generator can be estimated by evaluating equations using only hand-held calculator with this method. In addition, the method provides for determination of cascading ratios. The concept of cascading is illustrated in the figure and the definition of the cascading ratio is defined in the figure caption. An important aspect of the method is its approach to the issue of compatibility among segments, in combination with introduction of the concept of compatibility within a segment. Prior approaches involved the use of only averaged material properties. Two materials in direct contact could be examined for compatibility with each other, but there was no general framework for analysis of compatibility. The present method establishes such a framework. The mathematical derivation of the method begins with the definition of reduced efficiency of a thermoelectric generator as the ratio between (1) its thermal-to-electric power-conversion efficiency and (2) its Carnot efficiency (the maximum efficiency theoretically attainable, given its hot- and cold-side temperatures). The derivation involves calculation of the reduced efficiency of a model thermoelectric generator for which the hot-side temperature is only infinitesimally greater than the cold-side temperature. The derivation includes consideration of the ratio (u) between the

A design approach for integrating thermoelectric devices using topology optimization

International Nuclear Information System (INIS)

Soprani, S.; Haertel, J.H.K.; Lazarov, B.S.; Sigmund, O.; Engelbrecht, K.

2016-01-01

Highlights: • The integration of a thermoelectric (TE) cooler into a robotic tool is optimized. • Topology optimization is suggested as design tool for TE integrated systems. • A 3D optimization technique using temperature dependent TE properties is presented. • The sensitivity of the optimization process to the boundary conditions is studied. • A working prototype is constructed and compared to the model results. - Abstract: Efficient operation of thermoelectric devices strongly relies on the thermal integration into the energy conversion system in which they operate. Effective thermal integration reduces the temperature differences between the thermoelectric module and its thermal reservoirs, allowing the system to operate more efficiently. This work proposes and experimentally demonstrates a topology optimization approach as a design tool for efficient integration of thermoelectric modules into systems with specific design constraints. The approach allows thermal layout optimization of thermoelectric systems for different operating conditions and objective functions, such as temperature span, efficiency, and power recovery rate. As a specific application, the integration of a thermoelectric cooler into the electronics section of a downhole oil well intervention tool is investigated, with the objective of minimizing the temperature of the cooled electronics. Several challenges are addressed: ensuring effective heat transfer from the load, minimizing the thermal resistances within the integrated system, maximizing the thermal protection of the cooled zone, and enhancing the conduction of the rejected heat to the oil well. The design method incorporates temperature dependent properties of the thermoelectric device and other materials. The 3D topology optimization model developed in this work was used to design a thermoelectric system, complete with insulation and heat sink, that was produced and tested. Good agreement between experimental results and

Eco-friendly p-type Cu2SnS3 thermoelectric material: crystal structure and transport properties

Science.gov (United States)

Shen, Yawei; Li, Chao; Huang, Rong; Tian, Ruoming; Ye, Yang; Pan, Lin; Koumoto, Kunihito; Zhang, Ruizhi; Wan, Chunlei; Wang, Yifeng

2016-01-01

As a new eco-friendly thermoelectric material, copper tin sulfide (Cu2SnS3) ceramics were experimentally studied by Zn-doping. Excellent electrical transport properties were obtained by virtue of 3-dimensionally conductive network for holes, which are less affected by the coexistence of cubic and tetragonal phases that formed upon Zn subsitition for Sn; a highest power factors ~0.84 mW m−1 K−2 at 723 K was achieved in the 20% doped sample. Moreover, an ultralow lattice thermal conductivity close to theoretical minimum was observed in these samples, which could be related to the disordering of atoms in the coexisting cubic and tetragonal phases and the interfaces. Thanks to the phonon-glass-electron-crystal features, a maximum ZT ~ 0.58 was obtained at 723 K, which stands among the tops for sulfide thermoelectrics at the same temperature. PMID:27666524

Discussion on the electrical and thermoelectrical properties of amorphous In-Sb-Te Films

Energy Technology Data Exchange (ETDEWEB)

Aly, K.A. [University of Jeddah, Physics Department, Faculty of Science and Arts, Khulais, Jeddah (Saudi Arabia); Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Saddeek, Y. [Al-Azhar University, Assiut Branch, Physics Department, Faculty of Science, Asyut (Egypt); Dahshan, A. [Port Said University, Department of Physics, Faculty of Science, Port Said (Egypt); King Khalid University, Department of Physics, Faculty of Science for Girls, Abha (Saudi Arabia)

2016-03-15

Different compositions of (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} (0.50 ≤ x ≤ 0.65) thin films were prepared by thermal evaporated technique, onto pre-cleaned glass substrates at ∝298 K. Both dark electrical resistivity (ρ) and thermoelectric power (S) were measured in the temperature range 300-420 K. The concentration of the free carriers is obtained from DC conductivity and thermoelectric power measurements. Seebeck coefficient was found to be positive over entire temperature range, indicating that (In{sub 0.5}Sb{sub 0.5}){sub 1-x}Te{sub x} films are p-type semiconducting materials. Also, the variation of the mobility with temperature has been estimated. Increasing tellurium concentration is found to affect the DC conductivity and thermoelectric power of the studied films. The activation energies obtained from the DC conductivity and thermoelectric power increase with increasing tellurium content. The obtained results were interpreted according to the chemical bond approach. (orig.)

Thermoelectric enhancement at low temperature in nonstoichiometric lead-telluride compounds

International Nuclear Information System (INIS)

Wang Heng; Li Jingfeng; Kita, Takuji

2007-01-01

Pb 1.17 Te thermoelectric polycrystalline materials were fabricated by mechanical alloying (MA) and spark plasma sintering (SPS). The property measurement and microstructural characterization showed that the present material has special features different from traditional Pb 1+x Te ingots with secondary Pb phase. An attractive enhancement of the thermoelectric figure of merit ZT = 0.64 was obtained at 450 K, with a low thermal conductivity of 1.11 W m -1 K -1 at this temperature. Transmission electron microscopy observation showed the existence of randomly dispersed nano features that are responsible for such enhancement, some of which are similar to the nanostructures reported in the AgPb m SbTe m+2 system. The origin of these regions is discussed and their influence on thermal conductivity is revealed. The results confirm the effectiveness of such a kind of nano feature in improving thermoelectric properties, especially in reducing thermal conductivity. They also indicate a new way of obtaining thermoelectric materials with such a kind of nano feature via MA and SPS

FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu4Sb12

International Nuclear Information System (INIS)

Shankar, A.; Rai, D.P.; Chettri, Sandeep; Khenata, R.; Thapa, R.K.

2016-01-01

We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu 4 Sb 12 using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconducting nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.

Nanocluster metal films as thermoelectric material for radioisotope mini battery unit

International Nuclear Information System (INIS)

Borisyuk, P.V.; Krasavin, A.V.; Tkalya, E.V.; Lebedinskii, Yu.Yu.; Vasiliev, O.S.; Yakovlev, V.P.; Kozlova, T.I.; Fetisov, V.V.

2016-01-01

The paper is devoted to studying the thermoelectric and structural properties of films based on metal nanoclusters (Au, Pd, Pt). The experimental results of the study of single nanoclusters’ tunneling conductance obtained with scanning tunneling spectroscopy are presented. The obtained data allowed us to evaluate the thermoelectric power of thin film consisting of densely packed individual nanoclusters. It is shown that such thin films can operate as highly efficient thermoelectric materials. A scheme of miniature thermoelectric radioisotope power source based on the thorium-228 isotope is proposed. The efficiency of the radioisotope battery using thermoelectric converters based on nanocluster metal films is shown to reach values up to 1.3%. The estimated characteristics of the device are comparable with the parameters of up-to-date radioisotope batteries based on nickel-63.

The enhanced thermoelectric properties of BiMnO3 ceramics by Sr-doped

Science.gov (United States)

Yu, X. Y.; Wang, Y.; Peng, J. J.; Wang, B. L.; Wei, K. L.; Liu, J. M.; He, Q. Y.

2018-04-01

A series of Bi1‑xSrxMnO3 (x = 0.40, 0.45, 0.50, 0.55) samples labeled as BSMO040, BSMO045, BSMO050, and BSMO055, respectively, have been fabricated by the modified solid-state reaction method. The crystal structural, microstructures, and chemical states of the elements and the thermoelectric properties were investigated with respect to the partial substitution of Sr2+ for Bi3+. The samples were characterized by x-ray diffraction (XRD) at 723 K, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS). Moreover, their electrical conductivities (σ), Seebeck coefficients (S), and thermal conductivities (κ) were determined. All the samples exhibited orthorhombic structure. The partial substitution of Sr2+ for Bi3+ caused valence shift of some Mn ions from +3 to +4 to maintain electric charge balance. The change in electric charge led to an increase in electron concentration, and thus, the electrical conductivity as well as the absolute value of Seebeck coefficient increased. Consequently, the power factor also increased. The highest power factor (0.3 × 10‑4 Wm‑1 K‑1) was obtained for BSMO055 at 1023 K. Moreover, the highest dimensionless figure-of-merit (ZT) obtained in this study was 0.015 for BSMO055 at 1073 K. It can be concluded that the partial substitution of Sr2+ for Bi3+ in the Bi1‑xSrxMnO3 samples (x = 0.40, 0.45, 0.50, and 0.55) improved the thermoelectric properties effectively.

Nanoscale thermoelectric materials

International Nuclear Information System (INIS)

Failamani, F.

2015-01-01

Thermoelectric (TE) materials directly convert thermal energy to electrical energy when subjected to a temperature gradient, whereas if electricity is applied to thermoelectric materials, a temperature gradient is formed. The performance of thermoelectric materials is characterized by a dimensionless figure of merit (ZT = S2T/ρλ), which consists of three parameters, Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (λ). To achieve good performance of thermoelectric power generation and cooling, ZT's of thermoelectric materials must be as high as possible, preferably above unity. This thesis comprises three main parts, which are distributed into six chapters: (i) nanostructuring to improve TE performance of trivalent rare earth-filled skutterudites (chapter 1 and 2), (ii) interactions of skutterudite thermolectrics with group V metals as potential electrode or diffusion barrier for TE devices (chapter 3 and 4), and (iii) search for new materials for TE application (chapter 5 and 6). Addition of secondary phases, especially nano sized phases can cause additional reduction of the thermal conductivity of a filled skutterudite which improves the figure of merit (ZT) of thermoelectric materials. In chapter 1 we investigated the effect of various types of secondary phases (silicides, borides, etc.) on the TE properties of trivalent rare earth filled Sb-based skutterudites as commercially potential TE materials. In this context the possibilty to introduce borides as nano-particles (via ball-milling in terms of a skutterudite/boride composite) is also elucidated in chapter 2. As a preliminary study, crystal structure of novel high temperature FeB-type phases found in the ternary Ta-{Ti,Zr,Hf,}-B systems were investigated. In case of Ti and Hf this phase is the high temperature stabilization of binary group IV metal monoborides, whereas single crystal study of (Ta,Zr)B proves that it is a true ternary phase as no stable monoboride exist in the

A Review on the Fabrication of Polymer-Based Thermoelectric Materials and Fabrication Methods

Science.gov (United States)

Kamarudin, Muhammad Akmal; Sahamir, Shahrir Razey; Datta, Robi Shankar; Long, Bui Duc; Mohd Sabri, Mohd Faizul; Mohd Said, Suhana

2013-01-01

Thermoelectricity, by converting heat energy directly into useable electricity, offers a promising technology to convert heat from solar energy and to recover waste heat from industrial sectors and automobile exhausts. In recent years, most of the efforts have been done on improving the thermoelectric efficiency using different approaches, that is, nanostructuring, doping, molecular rattling, and nanocomposite formation. The applications of thermoelectric polymers at low temperatures, especially conducting polymers, have shown various advantages such as easy and low cost of fabrication, light weight, and flexibility. In this review, we will focus on exploring new types of polymers and the effects of different structures, concentrations, and molecular weight on thermoelectric properties. Various strategies to improve the performance of thermoelectric materials will be discussed. In addition, a discussion on the fabrication of thermoelectric devices, especially suited to polymers, will also be given. Finally, we provide the challenge and the future of thermoelectric polymers, especially thermoelectric hybrid model. PMID:24324378

High-throughput exploration of thermoelectric and mechanical properties of amorphous NbO{sub 2} with transition metal additions

Energy Technology Data Exchange (ETDEWEB)

Music, Denis, E-mail: music@mch.rwth-aachen.de; Geyer, Richard W.; Hans, Marcus [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, 52074 Aachen (Germany)

2016-07-28

To increase the thermoelectric efficiency and reduce the thermal fatigue upon cyclic heat loading, alloying of amorphous NbO{sub 2} with all 3d and 5d transition metals has systematically been investigated using density functional theory. It was found that Ta fulfills the key design criteria, namely, enhancement of the Seebeck coefficient and positive Cauchy pressure (ductility gauge). These quantum mechanical predictions were validated by assessing the thermoelectric and elastic properties on combinatorial thin films, which is a high-throughput approach. The maximum power factor is 2813 μW m{sup −1} K{sup −2} for the Ta/Nb ratio of 0.25, which is a hundredfold increment compared to pure NbO{sub 2} and exceeds many oxide thermoelectrics. Based on the elasticity measurements, the consistency between theory and experiment for the Cauchy pressure was attained within 2%. On the basis of the electronic structure analysis, these configurations can be perceived as metallic, which is consistent with low electrical resistivity and ductile behavior. Furthermore, a pronounced quantum confinement effect occurs, which is identified as the physical origin for the Seebeck coefficient enhancement.

Experimental and analytical study on thermoelectric self cooling of devices

International Nuclear Information System (INIS)

Martinez, A.; Astrain, D.; Rodriguez, A.

2011-01-01

This paper presents and studies the novel concept of thermoelectric self cooling, which can be introduced as the cooling and temperature control of a device using thermoelectric technology without electricity consumption. For this study, it is designed a device endowed with an internal heat source. Subsequently, a commonly used cooling system is attached to the device and the thermal performance is statistically assessed. Afterwards, it is developed and studied a thermoelectric self cooling system appropriate for the device. Experimental and analytical results show that the thermal resistance between the heat source and the environment reduced by 25-30% when the thermoelectric self cooling system is installed, and indicates the promising applicability of this technology to devices that generate large amounts of heat, such as electrical power converters, transformers and control systems. Likewise, it was statistically proved that the thermoelectric self cooling system leads to significant reductions in the temperature difference between the heat source and the environment, and, what is more, this reduction increases as the heat flow generated by the heat source increases, which makes evident the fact that thermoelectric self cooling systems work as temperature controllers. -- Highlights: → Novel concept of thermoelectric self cooling is presented and studied. → No extra electricity is needed. → Thermal resistance between the heat source and the environment reduces by 25-30%. → Increasing reduction in temperature difference between heat source and environment. → Great applicability to any device that generates heat and must be cooled.

Thermoelectric effect in nano-scaled lanthanides doped ZnO

Energy Technology Data Exchange (ETDEWEB)

Otal, E H; Canepa, H R; Walsoee de Reca, N E [Centro de Investigacion en Solidos, CITEFA, San Juan Bautista de La Salle 4397 (B1603ALO) Villa Martelli, Buenos Aires (Argentina); Schaeuble, N; Aguirre, M H, E-mail: canepa@citefa.gov.a, E-mail: myriam.aguirre@empa.c [Solid State Chemistry and Catalysis, Empa, Swiss Federal Laboratories for Materials Testing and Research, Ueberlandstrasse 129, CH-8600 Duebendorf (Switzerland)

2009-05-01

Start Nano-scaled ZnO with 1% Er doping was prepared by soft chemistry methods. The synthesis was carried out in anhydrous polar solvent to achieve a crystal size of a few nanometers. Resulting particles were processed as precipitates or multi layer films. Structural characterization was evaluated by X-Ray diffraction and transmission and scanning electron microscopy. In the case of films, UV-Vis characterization was made. The thermoelectrical properties of ZnO:Er were evaluated and compared with a typical good thermoelectric material ZnO:Al. Both materials have also shown high Seebeck coefficients and they can be considered as potential compounds for thermoelectric conversion.

Effects of Li and Na intercalation on electronic, bonding and thermoelectric transport properties of MX{sub 2} (M = Ta; X = S or Se) dichalcogenides – Ab initio investigation

Energy Technology Data Exchange (ETDEWEB)

Meziane, Souheyr; Feraoun, Houda [Unité de Recherche Matériaux et Energies Renouvelables – URMER, Université de Tlemcen (Algeria); Ouahrani, Tarik [Laboratoire de Physique Théorique, Ecole Préparatoire en Sciences et Techniques, B.P. 230, 13000 Tlemcen (Algeria); Esling, Claude, E-mail: claude.esling@univ-lorraine.fr [Laboratoire d’Etude des Microstructures et de Mécanique des Matériaux, LEM3 UMR CNRS 7239, Université de Lorraine UL, Metz 57045 (France); Laboratoire d’Excellence “DAMAS”: Design of Metal Alloys for low-mAss Structures, Université de Lorraine – Metz, Ile du Saulcy, 57045 Metz Cedex 01 (France)

2013-12-25

Highlights: •Topological method is used to analyze the chemical bonding in Li(Na)TaX{sub 2} dichalcogenide compounds. •For the first time, Seebeck coefficient, electrical resistivity and thermal conductivity were estimated. •The best figure of merit is established for 2H-LiTaS{sub 2}. •Some new thermoelectric compounds are found. -- Abstract: Using the pseudo-potential method and semi-classical Boltzmann theory, electronic, chemical bonding and thermoelectric transport properties of sample and Li or Na intercalated Ta(S, Se){sub 2} dichalcogenides have been reported. The chemical bonding is studied using the Quantum Theory of Atoms in Molecules (QTAIM). Then, the Seebeck coefficient, electrical resistivity, electrical conductivity, thermal conductivity and figure of merit have been calculated in the temperature range 100–700 K. It was shown that the thermoelectric transport properties strongly depend on the Alkali metals doping and the two main structures 1T- or 2H- as well as the temperature. 2H-LiTaS{sub 2} have been selected as the best candidate for thermoelectrical applications with zT = 1.1.

Thermoelectric properties of boron and boron phosphide CVD wafers

Energy Technology Data Exchange (ETDEWEB)

Kumashiro, Y.; Yokoyama, T.; Sato, A.; Ando, Y. [Yokohama National Univ. (Japan)

1997-10-01

Electrical and thermal conductivities and thermoelectric power of p-type boron and n-type boron phosphide wafers with amorphous and polycrystalline structures were measured up to high temperatures. The electrical conductivity of amorphous boron wafers is compatible to that of polycrystals at high temperatures and obeys Mott`s T{sup -{1/4}} rule. The thermoelectric power of polycrystalline boron decreases with increasing temperature, while that of amorphous boron is almost constant in a wide temperature range. The weak temperature dependence of the thermal conductivity of BP polycrystalline wafers reflects phonon scattering by grain boundaries. Thermal conductivity of an amorphous boron wafer is almost constant in a wide temperature range, showing a characteristic of a glass. The figure of merit of polycrystalline BP wafers is 10{sup -7}/K at high temperatures while that of amorphous boron is 10{sup -5}/K.

Preparation by Poly(Acrylic Acid) Sol-Gel Method and Thermoelectric Properties of γ-Na x CoO2 Bulk Materials

Science.gov (United States)

Li, Xiaoyu; Zhang, Li; Tang, Xinfeng

2017-11-01

γ-Na x CoO2 single-phase powders have been synthesized by a poly(acrylic acid) (PAA) sol-gel (SG) method, and γ-Na x CoO2 bulk ceramic fabricated using spark plasma sintering. The effects of the PAA concentration on the sample phase composition and morphology were investigated. The thermoelectric properties of the γ-Na x CoO2 bulk ceramic were also studied. The results show that the PAA concentration did not significantly affect the crystalline phase of the product. However, agglomeration of γ-Na x CoO2 crystals was suppressed by the steric effect of PAA. The Na x CoO2 bulk ceramic obtained using the PAA SG method had higher crystallographic anisotropy, better chemical homogeneity, and higher density than the sample obtained by solid-state reaction (SSR), leading to improved thermoelectric performance. The PAA SG sample had power factor (in-plane PF = σS 2) of 0.61 mW m-1 K-2 and dimensionless figure of merit ( ZT) along the in-plane direction of 0.19 at 900 K, higher than for the SSR sample (in-plane PF = 0.51 mW m-1 K-2, in-plane ZT = 0.17). These results demonstrate that a simple and feasible PAA SG method can be used for synthesis of Na x CoO2 ceramics with improved thermoelectric properties.

Alkaline earth filled nickel skutterudite antimonide thermoelectrics

Science.gov (United States)

Singh, David Joseph

2013-07-16

A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.

The electric and thermoelectric properties of Cu(II)-Schiff base nano-complexes

Science.gov (United States)

Ibrahim, E. M. M.; Abdel-Rahman, Laila H.; Abu-Dief, Ahmed M.; Elshafaie, A.; Hamdan, Samar Kamel; Ahmed, A. M.

2018-05-01

The physical properties, such as electric and optical properties, of metal-Schiff base complexes have been widely investigated. However, their thermoelectric (TE) properties remain unreported. This work presents Cu(II)-Schiff base complexes as promising materials for TE power generation. Therefore, three Cu(II)-Schiff base complexes (namely, [Cu(C32H22N4O2)].3/2H2O, [Cu(C23H17N4O7Br)], and [Cu(C27H22N4O8)].H2O) have been synthesized in nanosized scale. The electric and TE properties have been studied and comprehensive discussions have been presented to promote the nano-complexes (NCs) practical applications in the field of TE power generation. The electrical measurements confirm that the NCs are semiconductors and the electrical conduction process is governed by intermolecular and intramolecular transfer of the charge carriers. The TE measurements reveal that the Cu(II)-Schiff base NCs are nondegenerate P-type semiconductors. The measured Seebeck coefficient values were higher compared to the values reported in previous works for other organic materials indicating that the complexes under study are promising candidates for theremoelectric applications if the electrical conductivity could be enhanced.

Giant Pressure-Induced Enhancement of Seebeck Coefficient and Thermoelectric Efficiency in SnTe

Energy Technology Data Exchange (ETDEWEB)

Baker, Jason; Kumar, Ravhi; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew; Velisavljevic, Nenad (CIW); (LANL); (UNLV)

2017-10-30

The thermoelectric properties of polycrystalline SnTe have been measured up to 4.5 GPa at 330 K. SnTe shows an enormous enhancement in Seebeck coefficient, greater than 200 % after 3 GPa, which correlates to a known pressure-induced structural phase transition that is observed through simultaneous in situ X-ray diffraction measurement. Electrical resistance and relative changes to the thermal conductivity were also measured, enabling the determination of relative changes in the dimensionless figure of merit (ZT), which increases dramatically after 3 GPa, reaching 350 % of the lowest pressure ZT value. The results demonstrate a fundamental relationship between structure and thermoelectric behaviours and suggest that pressure is an effective tool to control them.

LaBiTe3: An unusual thermoelectric material

KAUST Repository

Singh, Nirpendra

2014-06-18

Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

LaBiTe3: An unusual thermoelectric material

KAUST Repository

Singh, Nirpendra; Schwingenschlö gl, Udo

2014-01-01

Using first-principles calculations and semi-classical Boltzmann transport theory, the thermoelectric properties of LaBiTe3 are studied. The band gap and, hence, the thermoelectric response are found to be easily tailored by application of strain. Independent of the temperature, the figure of merit turns out to be maximal at a doping of about 1.6 × 1021 cm-3. At room temperature we obtain values of 0.4 and 0.5 for unstrained and moderately strained LaBiTe3, which increases to 1.1 and 1.3 at 800 K. A large spin splitting is observed in the conduction band at the T point. Therefore, LaBiTe3 merges characteristics that are interesting for thermoelectric as well as spintronic devices.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

Energy Technology Data Exchange (ETDEWEB)

Lopez, Luis-David Patino [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Dilhaire, Stefan [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Grauby, Stephane [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Salhi, M Amine [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Ezzahri, Younes [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Claeys, Wilfrid [Universite de Bordeaux 1, Centre de Physique Moleculaire Optique et Hertzienne, 351, cours de la liberation, 33405 Talence (France); Batsale, Jean-Christophe [Laboratoire TREFLE, Esplanade des Arts et Metiers, 33405 Talence Cedex (France)

2005-05-21

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties.

Characterization of thermoelectric devices by laser induced Seebeck electromotive force (LIS-EMF) measurement

International Nuclear Information System (INIS)

Lopez, Luis-David Patino; Dilhaire, Stefan; Grauby, Stephane; Salhi, M Amine; Ezzahri, Younes; Claeys, Wilfrid; Batsale, Jean-Christophe

2005-01-01

An in-depth study related to a new method of characterizing properties in thermoelectrics is proposed in this paper. This technique is appropriate for single or multi-layered thermoelectric devices. A modulated laser beam is used as a heater in order to generate a Seebeck electromotive force (EMF). The laser beam, line shaped, can be focused at any location along the sample surface, allowing spatially resolved measurements. Seebeck EMF measurements, associated with a versatile model based on the thermal quadrupoles method, allow determination of the sample Seebeck EMF profile and identifying of the sample thermal contact resistances, and should be useful for identification of devices and material thermoelectric properties

Enhanced electrical transport and thermoelectric properties in Ni doped Cu3SbSe4

Science.gov (United States)

Kumar, Aparabal; Dhama, P.; Das, Anish; Sarkar, Kalyan Jyoti; Banerji, P.

2018-05-01

In this study, we report the enhanced thermoelectric performance of Cu3SbSe4 by Ni doping at Cu site. Cu3-xNixSbSe4 (x = 0, 0.01, 0.03, 0.05) were prepared by melt growth, ball milling followed by spark plasma sintering. Structural characterization, phase analysis and surface morphology were carried out using X-ray diffraction, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy. Electrical and thermal properties of all the samples were investigated in the temperature range 300 - 650 K. Decrease in electrical resistivity with Ni doping due to increase in carrier concentration with enhanced Seebeck coefficient via increase in density of state near the Fermi level gives a remarkably high power factor. At the same time, thermal conductivity was found to decrease due to increased carrier-phonon scattering and acoustic phonon scattering. Consequently, a remarkable enhancement in the thermoelectric figure of merit (ZT˜ 0.65) of Cu3-xNixSbSe4 was achieved for x = 0.01 sample. Thus, Ni doping is an effective approach to improve the efficiency of Cu3SbSe4.

Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

Science.gov (United States)

Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

2017-07-01

We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

Optimal operation of thermoelectric cooler driven by solar thermoelectric generator

International Nuclear Information System (INIS)

Khattab, N.M.; El Shenawy, E.T.

2006-01-01

The possibility of using a solar thermoelectric generator (TEG) to drive a small thermoelectric cooler (TEC) is studied in the present work. The study includes the theory of both the TEG and the TEC, giving special consideration to determination of the number of TEG modules required to power the TEC to achieve the best performance of the TEG-TEC system all year round. Commercially available thermoelectric modules (TE) are used in the system. The TEG contains 49 thermocouples and the TEC contains 127 thermocouples. A simple arrangement of plane reflectors that are designed to receive maximum solar energy during noon time is used to heat the TEG. Performance tests are conducted to determine both the physical properties and the performance curves of the available TE modules. Also, empirical relations describing the performance of the TEG and TEC modules have been established. These relations are used to develop a mathematical model simulating the TEG-TEC system to predict its performance all year round under the actual climatic conditions of Cairo, Egypt (30 deg. N latitude). The model results are used to determine the number of TEG modules required to drive a single TEC module at maximum cooling capacity. The results show that five thermocouples of the TEG can drive one thermocouple of the TEC, which coincides with the previous theory of the TEG-TEC. This means that 10 of the used TEG modules are required to power the used TEC at optimum performance most times of the year

High efficiency semimetal/semiconductor nanocomposite thermoelectric materials

International Nuclear Information System (INIS)

Zide, J. M. O.; Bahk, J.-H.; Zeng, G.; Bowers, J. E.; Singh, R.; Zebarjadi, M.; Bian, Z. X.; Shakouri, A.; Lu, H.; Gossard, A. C.; Feser, J. P.; Xu, D.; Singer, S. L.; Majumdar, A.

2010-01-01

Rare-earth impurities in III-V semiconductors are known to self-assemble into semimetallic nanoparticles which have been shown to reduce lattice thermal conductivity without harming electronic properties. Here, we show that adjusting the band alignment between ErAs and In 0.53 Ga 0.47-X Al X As allows energy-dependent scattering of carriers that can be used to increase thermoelectric power factor. Films of various Al concentrations were grown by molecular beam epitaxy, and thermoelectric properties were characterized. We observe concurrent increases in electrical conductivity and Seebeck coefficient with increasing temperatures, demonstrating energy-dependent scattering. We report the first simultaneous power factor enhancement and thermal conductivity reduction in a nanoparticle-based system, resulting in a high figure of merit, ZT=1.33 at 800 K.

Synthesis, characterization and thermoelectric properties of metal borides, boron carbides and carbaborides; Synthese, Charakterisierung und thermoelektrische Eigenschaften ausgewaehlter Metallboride, Borcarbide und Carbaboride

Energy Technology Data Exchange (ETDEWEB)

Guersoy, Murat

2015-07-06

This work reports on the solid state synthesis and structural and thermoelectrical characterization of hexaborides (CaB{sub 6}, SrB{sub 6}, BaB{sub 6}, EuB{sub 6}), diboride dicarbides (CeB{sub 2}C{sub 2}, LaB{sub 2}C{sub 2}), a carbaboride (NaB{sub 5}C) and composites of boron carbide. The characterization was performed by X-ray diffraction methods and Rietveld refinements based on structure models from literature. Most of the compounds were densified by spark plasma sintering at 100 MPa. As high-temperature thermoelectric properties the Seebeck coefficients, electrical conductivities, thermal diffusivities and heat capacities were measured between room temperature and 1073 K. ZT values as high as 0.5 at 1273 K were obtained for n-type conducting EuB{sub 6}. High-temperature X-ray diffraction also confirmed its thermal stability. The solid solutions Ca{sub x}Sr{sub 1-x}B{sub 6}, Ca{sub x}Ba{sub 1-x}B{sub 6} and Sr{sub x}Ba{sub 1-x}B{sub 6} (x = 0, 0.25, 0.5, 0.75, 1) are also n-type but did not show better ZT values for the ternary compounds compared to the binaries, but for CaB{sub 6} the values of the figure of merit (ca. 0.3 at 1073 K) were significantly increased (ca. 50 %) compared to earlier investigations which is attributed to the densification process. Sodium carbaboride, NaB{sub 5}C, was found to be the first p-type thermoelectric material that crystallizes with the hexaboride-structure type. Seebeck coefficients of ca. 80 μV . K{sup -1} were obtained. Cerium diboride dicarbide, CeB{sub 2}C{sub 2}, and lanthanum diboride dicarbide, LaB{sub 2}C{sub 2}, are metallic. Both compounds were used as model compounds to develop compacting strategies for such layered borides. Densities obtained at 50 MPa were determined to be higher than 90 %. A new synthesis route using single source precursors that contain boron and carbon was developed to open the access to new metal-doped boron carbides. It was possible to obtain boron carbide, but metal-doping could not be

The Influence of Spark Plasma Sintering Temperature on the Microstructure and the Thermoelectric Properties of Al, Ga dually-doped ZnO

DEFF Research Database (Denmark)

Han, Li; Le, Thanh Hung; Van Nong, Ngo

2012-01-01

Al, Ga dually-doped ZnO was prepared by spark plasma sintering with different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples with a sintering temperature above 1223K obtained higher relative densities...

Investigation of the Anisotropic Thermoelectric Properties of Oriented Polycrystalline SnSe

Directory of Open Access Journals (Sweden)

Yulong Li

2015-06-01

Full Text Available Polycrystalline SnSe was synthesized by a melting-annealing-sintering process. X-ray diffraction reveals the sample possesses pure phase and strong orientation along [h00] direction. The degree of the orientations was estimated and the anisotropic thermoelectric properties are characterized. The polycrystalline sample shows a low electrical conductivity and a positive and large Seebeck coefficient. The low thermal conductivity is also observed in polycrystalline sample, but slightly higher than that of single crystal. The minimum value of thermal conductivity was measured as 0.3 W/m·K at 790 K. With the increase of the orientation factor, both electrical and thermal conductivities decrease, but the thermopowers are unchanged. As a consequence, the zT values remain unchanged in the polycrystalline samples despite the large variation in the degree of orientation.

Thermoelectric properties of cobalt–antimonide thin films prepared by radio frequency co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz; Han, Seungwoo, E-mail: swhan@kimm.re.kr

2015-07-31

Co–Sb thin films with an Sb content in the range 65–76 at.%, were deposited on a thermally oxidized Si (100) substrate preheated at 200 °C using radio-frequency co-sputtering. Evaluation using scanning electron microscopy images and X-ray diffraction reveals that the films were polycrystalline, with a grain size in the range 100–250 nm. Energy-dispersive spectroscopy analysis indicates single-phase CoSb{sub 2} and CoSb{sub 3} films, as well as multiphase thin films with either CoSb{sub 2} or CoSb{sub 3} as the dominant phase. The electrical and thermoelectric properties were measured and found to be strongly dependent on the observed phases and the defect concentrations. The CoSb{sub 2} thin films were found to exhibit a significant n-type thermoelectric effect, which, coupled with the very low electrical resistivity, resulted in a larger power factor than that of the CoSb{sub 3} thin films. We find power factors of 0.73 mWm{sup −1} K{sup −2} and 0.67 mWm{sup −1} K{sup −2} for the CoSb{sub 2} and CoSb{sub 3} thin films, respectively. - Highlights: • Polycrystalline Co–Sb thin films were obtained by present deposition strategy. • CoSb{sub 2} and CoSb{sub 3} have semimetal and semiconductor characteristics respectively. • The Seebeck coefficient depends heavily on defect concentration and impurity phases. • Film properties in the second heating cycle were different from the first. • CoSb{sub 2} is found to possess significant n-type thermopower.

Thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics in different oxygen-reduction conditions

Science.gov (United States)

Li, Yi; Liu, Jian; Wang, Chun-Lei; Su, Wen-Bin; Zhu, Yuan-Hu; Li, Ji-Chao; Mei, Liang-Mo

2015-04-01

The thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics, reduced in different conditions, are investigated in the temperature range from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the thermal-activated polaron hopping in the low temperature range, the Fermi glass behavior in the middle temperature range, and the Anderson localized behavior in the high temperature range. The thermal conductivity presents a plateau at high-temperatures, indicating a glass-like thermal conduction behavior. Both the thermoelectric power factor and the thermal conductivity increase with the increase of the degree of oxygen-reduction. Taking these two factors into account, the oxygen-reduction can still contribute to promoting the thermoelectric figure of merit. The highest ZT value is obtained to be ˜0.19 at 1073 K in the heaviest oxygen reduced sample. Project supported by the National Basic Research Program of China (Grant No. 2013CB632506) and the National Natural Science Foundation of China (Grant Nos. 51202132 and 51002087).

Robust Temperature Control of a Thermoelectric Cooler via μ -Synthesis

Science.gov (United States)

Kürkçü, Burak; Kasnakoğlu, Coşku

2018-02-01

In this work robust temperature control of a thermoelectric cooler (TEC) via μ -synthesis is studied. An uncertain dynamical model for the TEC that is suitable for robust control methods is derived. The model captures variations in operating point due to current, load and temperature changes. A temperature controller is designed utilizing μ -synthesis, a powerful method guaranteeing robust stability and performance. For comparison two well-known control methods, namely proportional-integral-derivative (PID) and internal model control (IMC), are also realized to benchmark the proposed approach. It is observed that the stability and performance on the nominal model are satisfactory for all cases. On the other hand, under perturbations the responses of PID and IMC deteriorate and even become unstable. In contrast, the μ -synthesis controller succeeds in keeping system stability and achieving good performance under all perturbations within the operating range, while at the same time providing good disturbance rejection.

Electronic Structure Properties and a Bonding Model of Thermoelectric Half-Heusler and Boride Phases

Science.gov (United States)

Simonson, Jack William

Half-Heusler alloys MNiSn and MCoSb (M = Ti, Zr, Hf) and layered boride intermetallics with structure types YCrB4 and Er 3CrB7 were designed, synthesized, and characterized. The thermoelectric properties of these two classes of alloys were measured from room temperature to 1100 K with the intent of indirectly studying their electronic structure properties and gauging not only their suitability but that of related alloys for high temperature thermoelectric power generation. In the case of the half-Heusler alloys, transition metals were substituted to both the M and Ni/Co sites to study the resultant modifications of the d-orbital-rich portion of the electronic structure near the Fermi energy. This modification and subsequent pinning of the Fermi energy within the gap is discussed herein in terms of first principles electronic structure calculations from the literature. In the half-Heusler alloys, it was found that substitution of transition metals invariably led to a decrease in the thermopower, while the resistivity typically maintained its semiconducting trend. On the other hand, Sn doping in MCoSb type alloys -- a dopant that has been known for some time to be efficient -- was shown to result in high ZT at temperatures in excess of 1000 K. Moreover, the band gaps of the transition metal-doped alloys measured in this work offer insight into the discrepancy between the predicted and measured band gaps in the undoped parent compositions. In the case of the layered boride alloys, on the other hand, few electronic calculations have been published, thus prompting the generalization of a well-known electron counting rule -- which is typically used to study molecular organometallics, boranes, and metallocenes -- to predict the trends in the densities of states of crystalline solids that possess the requisite deltahedral bonding geometry. In accordance with these generalized electronic counting rules, alloys of the form RMB4 (R = Y, Gd, Ho; M = Cr, Mo, W) were measured to

Strategies for discovery and optimization of thermoelectric materials: Role of real objects and local fields

Science.gov (United States)

Zhu, Hao; Xiao, Chong

2018-06-01

Thermoelectric materials provide a renewable and eco-friendly solution to mitigate energy shortages and to reduce environmental pollution via direct heat-to-electricity conversion. Discovery of the novel thermoelectric materials and optimization of the state-of-the-art material systems lie at the core of the thermoelectric society, the basic concept behind these being comprehension and manipulation of the physical principles and transport properties regarding thermoelectric materials. In this mini-review, certain examples for designing high-performance bulk thermoelectric materials are presented from the perspectives of both real objects and local fields. The highlights of this topic involve the Rashba effect, Peierls distortion, local magnetic field, and local stress field, which cover several aspects in the field of thermoelectric research. We conclude with an overview of future developments in thermoelectricity.

Strain-induced bi-thermoelectricity in tapered carbon nanotubes

Science.gov (United States)

Algharagholy, L. A. A.; Pope, T.; Lambert, C. J.

2018-03-01

We show that carbon-based nanostructured materials are a novel testbed for controlling thermoelectricity and have the potential to underpin the development of new cost-effective environmentally-friendly thermoelectric materials. In single-molecule junctions, it is known that transport resonances associated with the discrete molecular levels play a key role in the thermoelectric performance, but such resonances have not been exploited in carbon nanotubes (CNTs). Here we study junctions formed from tapered CNTs and demonstrate that such structures possess transport resonances near the Fermi level, whose energetic location can be varied by applying strain, resulting in an ability to tune the sign of their Seebeck coefficient. These results reveal that tapered CNTs form a new class of bi-thermoelectric materials, exhibiting both positive and negative thermopower. This ability to change the sign of the Seebeck coefficient allows the thermovoltage in carbon-based thermoelectric devices to be boosted by placing CNTs with alternating-sign Seebeck coefficients in tandem.

Thermoelectricity in liquid crystals

Science.gov (United States)

Mohd Said, Suhana; Nordin, Abdul Rahman; Abdullah, Norbani; Balamurugan, S.

2015-09-01

The thermoelectric effect, also known as the Seebeck effect, describes the conversion of a temperature gradient into electricity. A Figure of Merit (ZT) is used to describe the thermoelectric ability of a material. It is directly dependent on its Seebeck coefficient and electrical conductivity, and inversely dependent on its thermal conductivity. There is usually a compromise between these parameters, which limit the performance of thermoelectric materials. The current achievement for ZT~2.2 falls short of the expected threshold of ZT=3 to allow its viability in commercial applications. In recent times, advances in organic thermoelectrics been significant, improving by over 3 orders of magnitude over a period of about 10 years. Liquid crystals are newly investigated as candidate thermoelectric materials, given their low thermal conductivity, inherent ordering, and in some cases, reasonable electrical conductivity. In this work the thermoelectric behaviour of a discotic liquid crystal, is discussed. The DLC was filled into cells coated with a charge injector, and an alignment of the columnar axis perpendicular to the substrate was allowed to form. This thermoelectric behavior can be correlated to the order-disorder transition. A reasonable thermoelectric power in the liquid crystal temperature regime was noted. In summary, thermoelectric liquid crystals may have the potential to be utilised in flexible devices, as a standalone power source.

Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates

Science.gov (United States)

Burmistrova, Polina V.; Maassen, Jesse; Favaloro, Tela; Saha, Bivas; Salamat, Shuaib; Rui Koh, Yee; Lundstrom, Mark S.; Shakouri, Ali; Sands, Timothy D.

2013-04-01

Epitaxial ScN(001) thin films were grown on MgO(001) substrates by dc reactive magnetron sputtering. The deposition was performed in an Ar/N2 atmosphere at 2 × 10-3 Torr at a substrate temperature of 850 °C in a high vacuum chamber with a base pressure of 10-8 Torr. In spite of oxygen contamination of 1.6 ± 1 at. %, the electrical resistivity, electron mobility, and carrier concentration obtained from a typical film grown under these conditions by room temperature Hall measurements are 0.22 mΩ cm, 106 cm2 V-1 s-1, and 2.5 × 1020 cm-3, respectively. These films exhibit remarkable thermoelectric power factors of 3.3-3.5 × 10-3 W/mK2 in the temperature range of 600 K to 840 K. The cross-plane thermal conductivity is 8.3 W/mK at 800 K yielding an estimated ZT of 0.3. Theoretical modeling of the thermoelectric properties of ScN calculated using a mean-free-path of 23 nm at 300 K is in very good agreement with the experiment. These results also demonstrate that further optimization of the power factor of ScN is possible. First-principles density functional theory combined with the site occupancy disorder technique was used to investigate the effect of oxygen contamination on the electronic structure and thermoelectric properties of ScN. The computational results suggest that oxygen atoms in ScN mix uniformly on the N site forming a homogeneous solid solution alloy. Behaving as an n-type donor, oxygen causes a shift of the Fermi level in ScN into the conduction band without altering the band structure and the density of states.

Ambient growth of highly oriented Cu{sub 2}S dendrites of superior thermoelectric behaviour

Energy Technology Data Exchange (ETDEWEB)

Mulla, Rafiq; Rabinal, M.K., E-mail: mkrabinal@yahoo.com

2017-03-01

Highlights: • A simple and ambient route to synthesize highly oriented dendrites of copper sulfide is proposed. • Remarkable enhancement is observed in Seebeck coefficient by room temperature, solution phase doping. • High thermoelectric power factor is observed at room temperature, indicating promising behaviour. - Abstract: Low-cost, non-toxic and efficient material is an urgent need for the thermoelectric energy conversion. Here, a rapid and ambient chemical route has been developed to grow dense and highly oriented dendrites of copper sulfide (Cu{sub 2}S) on copper substrate in a very simple approach, these films are uniform and covered with dense nanosheets. Room temperature solution doping of copper ions is carried out to improve thermoelectric performance. The Seebeck coefficient increased from ∼100 to 415 μV K{sup −1} with a slight decrease in electrical conductivity, this gives a high power factor (S{sup 2}σ) of about ∼400 μW m{sup −1} K{sup −2}. The improved thermoelectric properties in these films are accounted for resonant energy level doping and high phonon scattering. Such films with improved thermoelectric behaviour can be promising materials for energy conversion. The earth abundant, low cost, non toxic with a good thermoelectric property makes copper sulfide as a promising thermoelectric material for future applications.

Influence of germanium nano-inclusions on the thermoelectric power factor of bulk bismuth telluride alloy

International Nuclear Information System (INIS)

Satyala, Nikhil; Zamanipour, Zahra; Norouzzadeh, Payam; Krasinski, Jerzy S.; Vashaee, Daryoosh; Tahmasbi Rad, Armin; Tayebi, Lobat

2014-01-01

Nanocomposite thermoelectric compound of bismuth telluride (Bi 2 Te 3 ) with 5 at. % germanium nano-inclusions was prepared via mechanically alloying and sintering techniques. The influence of Ge nano-inclusions and long duration annealing on the thermoelectric properties of nanostructured Bi 2 Te 3 were investigated. It was found that annealing has significant effect on the carrier concentration, Seebeck coefficient, and the power factor of the thermoelectric compound. The systematic heat treatment also reduced the density of donor type defects thereby decreasing the electron concentration. While the as-pressed nanocomposite materials showed n-type properties, it was observed that with the increase of annealing time, the nanocomposite gradually transformed to an abundantly hole-dominated (p-type) sample. The long duration annealing (∼500 h) resulted in a significantly enhanced electrical conductivity pertaining to the augmentation in the density and the structural properties of the sample. Therefore, a simultaneous enhancement in both electrical and Seebeck coefficient characteristics resulted in a remarkable increase in the thermoelectric power factor.

BiCuSeO Thermoelectrics: An Update on Recent Progress and Perspective

Directory of Open Access Journals (Sweden)

Xiaoxuan Zhang

2017-02-01

Full Text Available A BiCuSeO system has been reported as a promising thermoelectric material and has attracted great attention in the thermoelectric community since 2010. Recently, several remarkable studies have been reported and the ZT of BiCuSeO was pushed to a higher level. It motivates us to systematically summarize the recent reports on the BiCuSeO system. In this short review, we start with several attempts to optimize thermoelectric properties of BiCuSeO. Then, we introduce several opinions to explore the origins of low thermal conductivity for BiCuSeO. Several approaches to enhance thermoelectric performance are also summarized, including modulation doping, introducing dual-vacancies, and dual-doping, etc. At last, we propose some possible strategies for enhancing thermoelectric performance of BiCuSeO in future research.

Effect of Sb content on the thermoelectric properties of annealed CoSb_3 thin films deposited via RF co-sputtering

International Nuclear Information System (INIS)

Ahmed, Aziz; Han, Seungwoo

2017-01-01

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb_3 phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb_2 phase possess the largest power factor. - Abstract: A series of CoSb_3 thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb_3 thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb_2 and CoSb_3 components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb_3 thin films. The CoSb_2 phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb_3 thin films. We report maximum power factor of 7.92 mW/m K"2 for the CoSb_2-containing mixed phase thin film and 1.26 mW/m K"2 for the stoichiometric CoSb_3 thin film.

Thermoelectric properties of ZnSb films grown by MOCVD

International Nuclear Information System (INIS)

Venkatasubramanian, R.; Watko, E.; Colpitts, T.

1997-04-01

The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

Thermal Stress Analysis and Structure Parameter Selection for a Bi2Te3-Based Thermoelectric Module

Science.gov (United States)

Gao, Jun-Ling; Du, Qun-Gui; Zhang, Xiao-Dan; Jiang, Xin-Qiang

2011-05-01

The output power and conversion efficiency of thermoelectric modules (TEMs) are mainly determined by their material properties, i.e., Seebeck coefficient, electrical resistivity, and thermal conductivity. In practical applications, due to the influence of the harsh environment, the mechanical properties of TEMs should also be considered. Using the finite-element analysis (FEA) model in ANSYS software, we present the thermal stress distribution of a TEM based on the anisotropic mechanical properties and thermoelectric properties of hot-pressed materials. By analyzing the possibilities of damage along the cleavage plane of Bi2Te3-based thermoelectric materials and by optimizing the structure parameters, a TEM with better mechanical performance is obtained. Thus, a direction for improving the thermal stress resistance of TEMs is presented.

An oxide-based thermoelectric generator: Transversal thermoelectric strip-device

Science.gov (United States)

Teichert, S.; Bochmann, A.; Reimann, T.; Schulz, T.; Dreßler, C.; Töpfer, J.

2015-07-01

A special design of an oxide-based transversal thermoelectric device utilizing thermoelectric oxides in combination with a ceramic multilayer technology is proposed. Metal strips within the ceramic matrix replace the tilted stack of alternating layers used in artificial anisotropic transversal thermoelectric devices. Numerical three-dimensional simulations of both device types reveal better thermoelectric performance data for the device with metal stripes. A monolithic transversal strip-device based on the material combination La1.97Sr0.03CuO4/Ag6Pd1 was prepared and electrically characterized. A maximum power output of 4.0 mW was determined at ΔT = 225 K for the monolithic device. The observed results are in remarkable agreement with three-dimensional numerical simulations utilizing the transport parameters of the two materials and the geometry data of the device.

Design Optimization of a Thermoelectric Cooling Module Using Finite Element Simulations

Science.gov (United States)

Abid, Muhammad; Somdalen, Ragnar; Rodrigo, Marina Sancho

2018-05-01

The thermoelectric industry is concerned about the size reduction, cooling performance and, ultimately, the production cost of thermoelectric modules. Optimization of the size and performance of a commercially available thermoelectric cooling module is considered using finite element simulations. Numerical simulations are performed on eight different three-dimensional geometries of a single thermocouple, and the results are further extended for a whole module as well. The maximum temperature rise at the hot and cold sides of a thermocouple is determined by altering its height and cross-sectional area. The influence of the soldering layer is analyzed numerically using temperature dependent and temperature independent thermoelectric properties of the solder material and the semiconductor pellets. Experiments are conducted to test the cooling performance of the thermoelectric module and the results are compared with the results obtained through simulations. Finally, cooling rate and maximum coefficient of performance (COPmax) are computed using convective and non-convective boundary conditions.

Thermoelectric-figure-of-merit enhancement of silicon-germanium through nanocomposite concept

Science.gov (United States)

Wang, Dezhi

SiGe alloy has been the thermoelectric material element of RTGs (Radioisotope thermoelectric power generators) for more than 20 years because of its good performance at high temperature. It also has a very high potential application in converting exhaust heat into useful electricity, which currently attracts a lot of research interest in the automotive industry where 40% of the energy was rejected as exhaust heat. However, its low conversion efficiency (8%) is a major concern although it is the best in practice. A new concept, namely Si-Ge nanocomposite, was proposed to enhance thermoelectric figure-of-merit. Fast heating pressure sintering was found to be an appropriate synthesizing method and a lab-made direct current-induced hot press system was established. It can reach l200°C within several minutes and many parameters can be controlled. The uniquely designed graphite die assembly can stand l60MPa pressure which is better than the best commercial products (127MPa). Numerous Si-Ge nanocomposite samples were pressed using our DC hot press. Fully dense n-type Si-Ge nanocomposite samples of nanoSi80nanoGe20P were finally obtained. The nanocomposite structure was characterized via XRD, SEM, EDS, and TEM. The proposed nanocomposite structure, dots in a matrix, was observed. Most importantly, the thermoelectric property measurements showed that the Si-Ge nanocomposite of n-type nanoSi80nanoGe20 possessed higher electrical conductivity but lower thermal conductivity, thus a higher ZT than that of n-type nanoSi80microGe20. This result proved that thermoelectric-figure-of-merit enhancement through the nanocomposite concept was the right direction.

Insight into the optoelectronic and thermoelectric properties of Ca-based Zintl phase CaCd2X2 (X = P, As) from first principles calculation

Science.gov (United States)

Belfarh, T.; Batouche, M.; Seddik, T.; Uğur, G.; Omran, S. Bin; Bouhemadou, A.; Sandeep; Wang, Xiaotian; Sun, Xiao-Wei; Khenata, R.

2018-06-01

We have studied the structural, optical, electronic and thermoelectric properties of the CaCd2X2 (X = P, As) compounds by using the full-potential augmented plane wave plus local orbitals method (FP-APW + lo). The exchange-correlation potential was treated using both the gradient generalized approximation (WC-GGA) and local density approximation (LDA). The estimated structural parameters, including the lattice parameters and internal coordinates agree well with the available experimental data. Our computed band structure shows that both studied compounds are semiconductors, with direct band gaps (Γ-Γ) of approximately 1.78 eV and 1.2 eV for CaCd2P2 and CaCd2As2, respectively, using GGA-TB-mBJ approach. The calculated optical spectra reveal a strong response of these materials in the energy range between the visible light and extreme UV regions, making them a good candidate for optoelectronic devices. Thermoelectric parameters, such as thermal conductivity, electrical conductivity, Seebeck coefficient, power factor and figure of merit were calculated. We note that both the CaCd2P2 and CaCd2As2 compounds show promising thermoelectric properties.

FP-LAPW calculations of the elastic, electronic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12}

Energy Technology Data Exchange (ETDEWEB)

Shankar, A., E-mail: amitshan2009@gmail.com [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India); Rai, D.P. [Department of Physics, Pachhunga University College, Aizawl 796001 (India); Chettri, Sandeep [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India); Khenata, R. [Laboratoire de Physique Quantique et de Modélisation Mathématique (LPQ3M), Département de Technologie, Université de Mascara, 29000 (Algeria); Thapa, R.K. [Condensed Matter Theory Group, Department of Physics, Mizoram University, 796004 (India)

2016-08-15

We have investigated the electronic structure, elastic and thermoelectric properties of the filled skutterudite CeRu{sub 4}Sb{sub 12} using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) approach is used to perform the calculations presented here. The electronic structure calculation suggests an indirect band gap semiconducting nature of the material with energy band gap of 0.08 eV. The analysis of the elastic constants at relaxed positions reveals the ductile nature of the sample material with covalent contribution in the inter-atomic bonding. The narrow band gap semiconducting nature with high value of Seebeck coefficient suggests the possibility of the thermoelectric application of the material. The analysis of the thermal transport properties confirms the result obtained from the energy band structure of the material with high thermopower and dimensionless figure of merit 0.19 at room temperature.

Engineering half-Heusler thermoelectric materials using Zintl chemistry

Science.gov (United States)

Zeier, Wolfgang G.; Schmitt, Jennifer; Hautier, Geoffroy; Aydemir, Umut; Gibbs, Zachary M.; Felser, Claudia; Snyder, G. Jeffrey

2016-06-01

Half-Heusler compounds based on XNiSn and XCoSb (X = Ti, Zr or Hf) have rapidly become important thermoelectric materials for converting waste heat into electricity. In this Review, we provide an overview on the electronic properties of half-Heusler compounds in an attempt to understand their basic structural chemistry and physical properties, and to guide their further development. Half-Heusler compounds can exhibit semiconducting transport behaviour even though they are described as ‘intermetallic’ compounds. Therefore, it is most useful to consider these systems as rigid-band semiconductors within the framework of Zintl (or valence-precise) compounds. These considerations aid our understanding of their properties, such as the bandgap and low hole mobility because of interstitial Ni defects in XNiSn. Understanding the structural and bonding characteristics, including the presence of defects, will help to develop different strategies to improve and design better half-Heusler thermoelectric materials.

An On-Site Thermoelectric Cooling Device for Cryotherapy and Control of Skin Blood Flow.

Science.gov (United States)

Mejia, Natalia; Dedow, Karl; Nguy, Lindsey; Sullivan, Patrick; Khoshnevis, Sepideh; Diller, Kenneth R

2015-12-01

Cryotherapy involves the surface application of low temperatures to enhance the healing of soft tissue injuries. Typical devices embody a remote source of chilled water that is pumped through a circulation bladder placed on the treatment site. In contrast, the present device uses thermoelectric refrigeration modules to bring the cooling source directly to the tissue to be treated, thereby achieving significant improvements in control of therapeutic temperature while having a reduced size and weight. A prototype system was applied to test an oscillating cooling and heating protocol for efficacy in regulating skin blood perfusion in the treatment area. Data on 12 human subjects indicate that thermoelectric coolers (TECs) delivered significant and sustainable changes in perfusion for both heating (increase by (±SE) 173.0 ± 66.0%, P device for cryotherapy with local temperature regulation.

Thermoelectric properties of c-GeSb{sub 0.75}Te{sub 0.5} to h-GeSbTe{sub 0.5} thin films through annealing treatment effects

Energy Technology Data Exchange (ETDEWEB)

Vora-ud, Athorn, E-mail: athornvora-ud@snru.ac.th [Program of Physics, Faculty of Science and Technology, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Thermoelectrics Research Center, Research and Development Institution, Sakon Nakhon Rajabhat University, Mueang District, Sakon Nakhon 47000 (Thailand); Horprathum, Mati, E-mail: mati.horprathum@nectec.or.th [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Eiamchai, Pitak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Muthitamongkol, Pennapa; Chayasombat, Bralee; Thanachayanont, Chanchana [National Metal and Materials Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Pankiew, Apirak [National Electronics and Computer Technology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Klamchuen, Annop [National Nanotechnology Center, National Science and Technology Development Agency, Pathumthani 12120 (Thailand); Naenkieng, Daengdech; Plirdpring, Theerayuth; Harnwunggmoung, Adul [Thermoelectric and Nanotechnology Research Center, Faculty of Science and Technology, Rajamangala University of Technology Suvarnabhumi, Huntra Phranakhon, Si Ayutthaya 13000 (Thailand); Charoenphakdee, Anek [NANO-Thermoelectrics Research Center, Division of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Mueng Nakorn Ratchasima 30000 Thailand (Thailand); Somkhunthot, Weerasak [Program of Physics, Faculty of Science and Technology, Loei Rajabhat University, Muang District, Loei 42000 (Thailand); and others

2015-11-15

Germanium–Antimony–Tellurium (Ge–Sb–Te) thin films were deposited on silicon wafers with 1-μm silicon dioxide (SiO{sub 2}/Si) by pulsed dc magnetron sputtering from a 99.99% GeSbTe target of 1:1:1 ratio at ambient temperature. The samples were annealed at 573, 623, 673, and 723 K for 3600 s in a vacuum state. The effects of the annealing treatment on phase identification, atomic composition, morphology and film thickness, carrier concentration, mobility, and Seebeck coefficient of the Ge–Sb–Te samples have been investigated by grazing-incidence X-ray diffraction, auger electron spectroscopy, field-emission scanning electron microscopy, Hall-effect measurements, and steady state method, respectively. The results demonstrated that the as-deposited Ge–Sb–Te sample was amorphous. Atomic composition of as-deposited and annealed films at 573 K and 623 K were GeSb{sub 0.75}Te{sub 0.5} while annealed films at 673 K and 723 K were GeSbTe{sub 0.5} due to Sb-rich GeSb{sub 0.75}Te{sub 0.5}. The samples annealed at 573 K and 623 K showed the crystal phases of cubic structure (c-GeSb{sub 0.75}Te{sub 0.5}) into hexagonal structure (h-GeSbTe{sub 0.5}) after annealing at 673 K and 723 K. The study demonstrated the insulating condition from the as-deposited GeSbTe film, and the changes towards the thermoelectric properties from the annealing treatments. The GeSbTe films annealed at 673 K yielded excellent thermoelectric properties with the electrical resistivity, Seebeck coefficient, and power factor at approximately 1.45 × 10{sup −5} Ωm, 71.07 μV K{sup −1}, and 3.48 × 10{sup −4} W m{sup −1} K{sup −2}, respectively. - Highlights: • GeSbTe thin films were successfully sputtered for thermoelectric properties. • GeSbTe films were examined among physical, electrical and thermoelectric properties. • Thermoelectric properties were discussed based on composition of the films.

Effects of hydrostatic pressure on the thermoelectric properties of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds: an ab initio study

Science.gov (United States)

Elsayed, H.; Olguín, D.; Cantarero, A.

2017-12-01

This work presents an ab initio study of the effects of hydrostatic pressure on the Seebeck coefficients and thermoelectric power factors of the ɛ-polytype of InSe, GaSe, and InGaSe2 semiconductor compounds. Our study is performed using the semi-classical Boltzmann theory and the rigid band approach. The electronic band structures of these materials are calculated using the full-potential linearized augmented plane-wave method. The obtained thermoelectric properties are discussed in terms of the results of the electronic structure calculations. As we will show, our calculated Seebeck coefficient values indicate that these materials are good alternatives to other well-studied thermoelectric systems.

Study of aluminum content in a welding metal by thermoelectric measurements

Science.gov (United States)

Carreón, H.; Ramirez, S.; Coronado, C.; Salazar, M.

2018-03-01

This work investigates the effect caused by the aluminum content in a welding metal and its variation in mechanical properties through the use of a non-destructive thermoelectric technique. It is known that aluminum has positive effects as deoxidizer in low percentages and alloying element together with Niobium and Vanadium. Aluminum has a positive and negative effect, initially improves the mechanical properties of the metal, as it acts as a grain refiner, increasing the yield strength, but in larger quantities, important mechanical properties such as hardness and toughness are seriously affected. For this purpose, HSLA ASTM 572 Gr. 50 steel was used as the base metal, where the weld metal was deposited, after which the specimens were fabricated and the mechanical tests and non-destructive tests were carried out. The sensitivity of the thermoelectric potential technique to microstructural and chemical composition changes was confirmed. The evolution of absolute thermoelectric potential (TEP) values with respect to the percentage of aluminum added to the weld was observed, being also quite sensitive to defects such as micro-cracks.

Ab initio description of the thermoelectric properties of heterostructures in the diffusive limit of transport

DEFF Research Database (Denmark)

Hinsche, Nicki Frank; Rittweger, Florian; Hölzer, Martin

2016-01-01

The scope of this review is to present the recent progress in the understanding of the microscopic origin of thermoelectric transport in semiconducting heterostructures and to identify and elucidate mechanisms which could lead to enhanced thermoelectric conversion efficiency. Based on first-princ...

Two-Dimensional Tellurene as Excellent Thermoelectric Material

KAUST Repository

Sharma, Sitansh; Singh, Nirpendra; Schwingenschlö gl, Udo

2018-01-01

We study the thermoelectric properties of two-dimensional tellurene by first-principles calculations and semiclassical Boltzmann transport theory. The HSE06 hybrid functional results in a moderate direct band gap of 1.48 eV at the Γ point. A high

Tunable thermoelectricity in monolayers of MoS2 and other group-VI dichalcogenides

KAUST Repository

Tahir, M

2014-10-31

We study the thermoelectric properties of monolayers of MoS2 and other group-VI dichalcogenides under circularly polarized off-resonant light. Analytical expressions are derived for the Berry phase mediated magnetic moment, orbital magnetization, as well as thermal and Nernst conductivities. Tuning of the band gap by off-resonant light enhances the spin splitting in both the valence and conduction bands and, thus, leads to a dramatic improvement of the spin and valley thermoelectric properties.

Tunable thermoelectricity in monolayers of MoS2 and other group-VI dichalcogenides

KAUST Repository

Tahir, M; Schwingenschlö gl, Udo

2014-01-01

We study the thermoelectric properties of monolayers of MoS2 and other group-VI dichalcogenides under circularly polarized off-resonant light. Analytical expressions are derived for the Berry phase mediated magnetic moment, orbital magnetization, as well as thermal and Nernst conductivities. Tuning of the band gap by off-resonant light enhances the spin splitting in both the valence and conduction bands and, thus, leads to a dramatic improvement of the spin and valley thermoelectric properties.

Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

Science.gov (United States)

Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

2014-07-01

The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

Notes on Computational Methodology and Tools of Thermoelectric Energy Systems

DEFF Research Database (Denmark)

Chen, Min; Bach, Inger Palsgaard; Rosendahl, Lasse

2007-01-01

The SPICE model allows the concurrent simulation of thermoelectric devices and application electric sub-models. It is an important step to implement the thermoelectric modeling at the system level. In this paper, temperature dependent material properties in the SPICE model, temperature and heat...... flow obtained by the code ANSYS Multiphysics and SPICE (Simulation Program with Integrated Circuit Emphasis), as well as some notes on the 3-D extension of the SPICE model are introduced....

Thermoelectric power generator with intermediate loop

Science.gov (United States)

Bell, Lon E; Crane, Douglas Todd

2013-05-21

A thermoelectric power generator is disclosed for use to generate electrical power from heat, typically waste heat. An intermediate heat transfer loop forms a part of the system to permit added control and adjustability in the system. This allows the thermoelectric power generator to more effectively and efficiently generate power in the face of dynamically varying temperatures and heat flux conditions, such as where the heat source is the exhaust of an automobile, or any other heat source with dynamic temperature and heat flux conditions.

Laser deposition and direct-writing of thermoelectric misfit cobaltite thin films

Science.gov (United States)

Chen, Jikun; Palla-Papavlu, Alexandra; Li, Yulong; Chen, Lidong; Shi, Xun; Döbeli, Max; Stender, Dieter; Populoh, Sascha; Xie, Wenjie; Weidenkaff, Anke; Schneider, Christof W.; Wokaun, Alexander; Lippert, Thomas

2014-06-01

A two-step process combining pulsed laser deposition of calcium cobaltite thin films and a subsequent laser induced forward transfer as micro-pixel is demonstrated as a direct writing approach of micro-scale thin film structures for potential applications in thermoelectric micro-devices. To achieve the desired thermo-electric properties of the cobaltite thin film, the laser induced plasma properties have been characterized utilizing plasma mass spectrometry establishing a direct correlation to the corresponding film composition and structure. The introduction of a platinum sacrificial layer when growing the oxide thin film enables a damage-free laser transfer of calcium cobaltite thereby preserving the film composition and crystallinity as well as the shape integrity of the as-transferred pixels. The demonstrated direct writing approach simplifies the fabrication of micro-devices and provides a large degree of flexibility in designing and fabricating fully functional thermoelectric micro-devices.

Combustion synthesis: A new approach for preparation of thermoelectric zinc antimonide compounds

Energy Technology Data Exchange (ETDEWEB)

Rouessac, F., E-mail: Florence.Rouessac@univ-montp2.fr [Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM2-ENSCM-UM1, C2M Universite Montpellier 2, CC 1504 Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France); Ayral, R.-M. [Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM2-ENSCM-UM1, C2M Universite Montpellier 2, CC 1504 Place Eugene Bataillon, 34095 Montpellier Cedex 5 (France)

2012-07-25

Highlights: Black-Right-Pointing-Pointer Reliable preparation method of thermoelectric materials. Black-Right-Pointing-Pointer Formation of zinc antimonide by the combustion synthesis method is investigated. Black-Right-Pointing-Pointer XRD and Raman spectroscopy as a function of temperature. Black-Right-Pointing-Pointer SHS: a new way for synthesizing thermoelectric materials. - Abstract: Due to the interesting properties of Zn{sub 4}Sb{sub 3} thermoelectric material, a reliable preparation method of this material is required. In this study, the formation of zinc antimonides by the combustion synthesis method is investigated and subjected to characterization using X-ray diffraction and Raman spectroscopy as a function of temperature. The results show that combustion synthesis can be a new way for synthesizing these thermoelectric materials.

The Influence of α- and γ-Al2O3 Phases on the Thermoelectric Properties of Al-doped ZnO

DEFF Research Database (Denmark)

Han, Li; Van Nong, Ngo; Le, Thanh Hung

2013-01-01

A systematic investigation on the microstructure and thermoelectric properties of Al-doped ZnO using α- and γ-Al2O3 as dopants was conducted in order to understand the doping effect and its mechanism. The samples were prepared by the spark plasma sintering technique from precursors calcined...... at various temperatures. Clear differences in microstructure and thermoelectric properties were observed between the samples doped with α- and γ-Al2O3. At any given calcination temperature, γ-Al2O3 resulted in the formation of a larger amount of the ZnAl2O4 phase in the Al-doped ZnO samples. The average...... grain size was found to be smaller for the γ-Al2O3-doped samples than that for the α-Al2O3-doped ones under the same sintering condition. It is proposed that the ZnAl2O4 phase is the reason for the observed suppression of grain growth and also for the slightly reduced lattice thermal conductivity...

Microstructure analyses and thermoelectric properties of Ag1−xPb18Sb1+yTe20

International Nuclear Information System (INIS)

Perlt, S.; Höche, Th.; Dadda, J.; Müller, E.; Bauer Pereira, P.; Hermann, R.; Sarahan, M.; Pippel, E.; Brydson, R.

2012-01-01

This study reports microstructural investigations of long-term annealed Ag 1−x Pb m Sb 1+y Te 2+m (m=18, x=y=0, hereinafter referred to as AgPb 18 SbTe 20 ) (Lead–Antimony–Silver–Tellurium, LAST-18) as well as of Ag 1−x Pb 18 Sb 1+y Te 20 , i.e. Ag-deficient and Sb-excess LAST-18 (x≠0,y≠0), respectively. Two different length scales are explored. The micrometer scale was evaluated by SEM to analyze the volume fraction and the number of secondary phases as well as the impact of processing parameters on the homogeneity of bulk samples. For AgPb 18 SbTe 20 , site-specific FIB liftout of TEM lamellae from thermoelectrically characterized samples was accomplished to investigate the structure on the nanometer scale. High-resolution TEM and energy-filtered TEM were performed to reveal shape and size distribution of nanoprecipitates, respectively. A hypothesis concerning the structure–property relationship is set out within the frame of a gradient annealing experiment. This study is completed by results dealing with inhomogeneities on the micrometer scale of Ag 1−x Pb 18 Sb 1+y Te 20 and its electronic properties. Highlights: ► SEM and TEM microstructure investigation of long-term annealed AgPb 18 SbTe 20 . ► SEM and thermoelectric studies on Ag 1−x Pb 18 Sb 1+y Te 20 . ► Discussion concerning structure–property relationship in long-term annealed AgPb 18 SbTe 20 . ► Correlation between Ag 1−x Pb 18 Sb 1+y Te 20 microscale structure and electronic properties.

Tetradymites as thermoelectrics and topological insulators

Science.gov (United States)

Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

2017-10-01

Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

Processing and nanostructure influences on mechanical properties of thermoelectric materials

Science.gov (United States)

Schmidt, Robert David

Thermoelectric (TE) materials are materials that can generate an electric current from a thermal gradient, with possible service in recovery of waste heat such as engine exhaust. Significant progress has been made in improving TE conversion efficiency, typically reported according to the figure of merit, ZT, with several recent papers publishing ZT values above 2. Furthermore, cost reductions may be made by the use of lower cost elements such as Mg, Si, Sn, Pb, Se and S in TE materials, while achieving ZT values between 1.3 and 1.8. To be used in a device, the thermoelectric material must be able to withstand the applied thermal and mechanical forces without failure. However, these materials are brittle, with low fracture toughness typically less than 1.5 MPa-m1/2, and often less than 0.5 MPa-m1/2. For comparison, window glass is approximately 0.75 MPa-m1/2. They have been optimized with nanoprecipitates, nanoparticles, doping, alterations in stoichiometry, powder processing and other techniques, all of which may alter the mechanical properties. In this study, the effect of SiC nanoparticle additions in Mg2Si, SnTe and Ag nanoparticle additions in the skutterudite Ba0.3Co 4Sb12 on the elastic moduli, hardness and fracture toughness are measured. Large changes (˜20%) in the elastic moduli in SnTe 1+x as a function of x at 0 and 0.016 are shown. The effect on mechanical properties of doping and precipitates of CdS or ZnS in a PbS or PbSe matrix have been reported. Changes in sintering behavior of the skutterudite with the Ag nanoparticle additions were explored. Possible liquid phase sintering, with associated benefits in lower processing temperature, faster densification and lower cost, has been shown. A technique has been proposed for determining additional liquid phase sintering aids in other TE materials. The effects of porosity, grain size, powder processing method, and sintering method were explored with YbAl3 and Ba0.3Co4Sb 12, with the porosity dependence of

The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Science.gov (United States)

Kucukgok, Bahadir; Wu, Xuewang; Wang, Xiaojia; Liu, Zhiqiang; Ferguson, Ian T.; Lu, Na

2016-02-01

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x = 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K-1 and 21.84 × 10-4 Wm-1K-1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

Effect of Sb content on the thermoelectric properties of annealed CoSb{sub 3} thin films deposited via RF co-sputtering

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Aziz, E-mail: aziz_ahmed@ust.ac.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of); Han, Seungwoo, E-mail: swhan@kimm.re.kr [Department of Nano-Mechatronics, Korea University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 305-350 (Korea, Republic of); Department of Nano-Mechanics, Korea Institute of Machinery and Materials (KIMM), 156 Gajeongbuk-ro, Yuseong-gu, Daejeon, 305-343 (Korea, Republic of)

2017-06-30

Graphical abstract: The X-ray diffraction patterns and temperature dependence of the Seebeck coefficient of the annealed Co–Sb thin films. - Highlights: • CoSb{sub 3} phase thin films were prepared using RF co sputtering method. • Thin film thermoelectric properties were hugely dependent on Sb content. • All thin films shows n-type conduction behavior at high temperatures. • The thin films with excess Sb possess the largest Seebeck coefficient. • The thin films with CoSb{sub 2} phase possess the largest power factor. - Abstract: A series of CoSb{sub 3} thin films with Sb contents in the range 70–79 at.% were deposited at room temperature via RF co-sputtering. The thin films were amorphous in the as-deposited state and annealed at 300 °C for 3 h to obtain crystalline samples. The annealed thin films were characterized using scanning electron microscopy and X-ray diffraction (XRD), and these data indicate that the films exhibited good crystallinity. The XRD patterns indicate single-phase CoSb{sub 3} thin films in the Sb-rich samples. For the Sb-deficient samples, however, mixed-phase thin films consisting of CoSb{sub 2} and CoSb{sub 3} components were obtained. The electrical and thermoelectric properties were measured at temperatures up to 760 K and found to be highly sensitive to the phases that were present. We observed a change in the thermoelectric properties of the films from p-type at low temperatures to n-type at high temperatures, which indicates potential applications as n-type thermoelectric thin films. A large Seebeck coefficient and power factor was obtained for the single-phase CoSb{sub 3} thin films. The CoSb{sub 2} phase thin films were also found to possess a significant Seebeck coefficient, which coupled with the much smaller electrical resistivity, provided a larger power factor than the single-phase CoSb{sub 3} thin films. We report maximum power factor of 7.92 mW/m K{sup 2} for the CoSb{sub 2}-containing mixed phase thin film and 1

Potential thermoelectric performance of hole-doped Cu2O

International Nuclear Information System (INIS)

Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

2013-01-01

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

Pressure induced structural transitions in Lead Chalcogenides and its influence on thermoelectric properties

Science.gov (United States)

Petersen, John; Spinks, Michael; Borges, Pablo; Scolfaro, Luisa

2012-03-01

Lead chalcogenides, most notably PbTe and PbSe, have become an active area of research due to their thermoelectric (TE) properties. The high figure of merit (ZT) of these materials has brought much attention to them, due to their ability to convert waste heat into electricity, with a possible application being in engine exhaust. Here, we examine the effects of altering the lattice parameter on total ground state energy and the band gap using first principles calculations performed within Density Functional Theory and the Projector Augmented Wave approach and the Vienna Ab-initio Simulation Package (VASP-PAW) code. Both PbTe and PbSe, in NaCl, orthorhombic, and CsCl structures are considered. It is found that altering the lattice parameter, which is analogous to applying external pressure on the material experimentally, has notable effects on both ground state energy and the band gap. The implications of this behavior in the TE properties of these materials are analyzed.

High Performance Bulk Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Ren, Zhifeng [Boston College, Chestnut Hill, MA (United States)

2013-03-31

Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

Structural and thermoelectric properties of the type-I Sn clathrates Cs8Sn46−n(n=0,2) from Density Functional Theory (DFT)

KAUST Repository

Egbele, Peter O.

2018-02-08

Sn clathrates are promising phonon glass, electron crystal materials (PGEC), in which the phonon free paths are short and the electron free paths are long. We analysed the relaxed structure of Sn clathrates using four different Density Funtional Exchange-Correlation functionals. The phonon structures were investigated as a first step in order to determine the phonon contribution to the thermal conductivity. We determined the Seebeck coefficient and electrical conductivity of the clathrate compound and the thermoelectric figure of merit. A glimpse into the dynamics of the system for the evaluation of the thermoelectric and electronic properties is presented.

Effect of quantum confinement on thermoelectric properties of vanadium dioxide nanofilms

Energy Technology Data Exchange (ETDEWEB)

Khan, G.R.; Ahmad, Bilal [National Institute of Technology Srinagar, Nanotech Research Lab, Department of Physics, Kashmir (India)

2017-12-15

The quantum confinement effect on thermoelectric properties of pristine vanadium dioxide (VO{sub 2}) nanofilms across semiconductor to metal phase transition (SMT) has been demonstrated by studying VO{sub 2} nanofilms of 15 nm thickness in comparison to microfilms of 290 nm thickness synthesized via inorganic sol-gel method casted on glass substrates by spin coating technique. The ebbing of phase transition temperature in nanofilms across SMT was consistent with the results obtained from resistance-temperature hysteresis contour during SMT dynamics of the nanofilms. The temperature dependent Hall and Seebeck measurements revealed that electrons were the charge carriers in the nanofilms and that the value of charge carrier concentration increased as much as 4 orders of magnitude while going across SMT which stood responsible almost entirely for resistance variations. The decline in carrier mobility and escalation in Seebeck coefficient in the low temperature semiconducting region were splendidly witnessed across SMT. (orig.)

Decoupling interrelated parameters for designing high performance thermoelectric materials.

Science.gov (United States)

Xiao, Chong; Li, Zhou; Li, Kun; Huang, Pengcheng; Xie, Yi

2014-04-15

synergistically enhanced thermoelectric properties. This occurs through a significant reduction of thermal conductivity, without the deterioration of thermopower and electrical conductivity. In addition, we introduce the concept of spin entropy in wide band gap semiconductor nanocrystals, which acts to fully disentangle the otherwise interconnected quantities for synergistically optimized thermoelectric performance. Finally, we discuss a new concept we developed that is based on an ultrathin-nanosheet composite that we fabricated from ultrathin nanosheets of atomic thickness. These retain the original strong two-dimensional electron gas (2DEG) and allow for decoupled optimization of the three thermoelectric parameters, which improves thermoelectric performance.

A 3D TCAD simulation of a thermoelectric module configured for thermoelectric power generation, cooling and heating

Science.gov (United States)

Gould, C. A.; Shammas, N. Y. A.; Grainger, S.; Taylor, I.; Simpson, K.

2012-06-01

This paper documents the 3D modeling and simulation of a three couple thermoelectric module using the Synopsys Technology Computer Aided Design (TCAD) semiconductor simulation software. Simulation results are presented for thermoelectric power generation, cooling and heating, and successfully demonstrate the basic thermoelectric principles. The 3D TCAD simulation model of a three couple thermoelectric module can be used in the future to evaluate different thermoelectric materials, device structures, and improve the efficiency and performance of thermoelectric modules.

Thermoelectric properties, crystal and electronic structure of semiconducting RECuSe2 (RE = Pr, Sm, Gd, Dy and Er)

International Nuclear Information System (INIS)

Esmaeili, Mehdi; Tseng, Yu-Chih; Mozharivskyj, Yurij

2014-01-01

Highlights: • Crystal and electronic structure of monoclinic and trigonal RECuSe 2 phases. • Thermoelectric properties of the RECuSe 2 phases. • Temperature stability of the RECuSe 2 phases. - Abstract: The ternary RECuSe 2 phases have been prepared and structurally characterized. They adopt either a monoclinic structure (P2 1 /c, z = 4) for lighter rare earths (RE = Pr, Sm and Gd) or Cu-disordered trigonal structure for heavier rare-earths (P3 ¯ m1, z = 1, RE = Dy and Er). The resistivity and Seebeck coefficient measurements on GdCuSe 2 , DyCuSe 2 and ErCuSe 2 indicate that the studied phases are p-type semiconductors with relatively small activation energies (0.045–0.11 eV). However, their electrical resistivities are too high (0.45–220 Ω cm at room temperature) to make them competitive thermoelectric materials. Electronic structure calculations indicate presence of a band gap in the RECuSe 2 phases

Encapsulation of high temperature thermoelectric modules

Energy Technology Data Exchange (ETDEWEB)

Salvador, James R.; Sakamoto, Jeffrey; Park, Youngsam

2017-07-11

A method of encapsulating a thermoelectric device and its associated thermoelectric elements in an inert atmosphere and a thermoelectric device fabricated by such method are described. These thermoelectric devices may be intended for use under conditions which would otherwise promote oxidation of the thermoelectric elements. The capsule is formed by securing a suitably-sized thin-walled strip of oxidation-resistant metal to the ceramic substrates which support the thermoelectric elements. The thin-walled metal strip is positioned to enclose the edges of the thermoelectric device and is secured to the substrates using gap-filling materials. The strip, substrates and gap-filling materials cooperatively encapsulate the thermoelectric elements and exclude oxygen and water vapor from atmospheric air so that the elements may be maintained in an inert, non-oxidizing environment.

Optimized Characterization of Thermoelectric Generators for Automotive Application

Science.gov (United States)

Tatarinov, Dimitri; Wallig, Daniel; Bastian, Georg

2012-06-01

New developments in the field of thermoelectric materials bring the prospect of consumer devices for recovery of some of the waste heat from internal combustion engines closer to reality. Efficiency improvements are expected due to the development of high-temperature thermoelectric generators (TEG). In contrast to already established radioisotope thermoelectric generators, the temperature difference in automotive systems is not constant, and this imposes a set of specific requirements on the TEG system components. In particular, the behavior of the TEGs and interface materials used to link the heat flow from the heat source through the TEG to the heat sink must be examined. Due to the usage patterns of automobiles, the TEG will be subject to cyclic thermal loads, which leads to module degradation. Additionally, the automotive TEG will be exposed to an inhomogeneous temperature distribution, leading to inhomogeneous mechanical loads and reduced system efficiency. Therefore, a characterization rig is required to allow determination of the electrical, thermal, and mechanical properties of such high-temperature TEG systems. This paper describes a measurement setup using controlled adjustment of cold-side and warm-side temperatures as well as controlled feed-in of electrical power for evaluation of TEGs for application in vehicles with combustion engines. The temperature profile in the setup can be varied to simulate any vehicle usage pattern, such as the European standard driving cycle, allowing the power yield of the TEGs to be evaluated for the chosen cycle. The spatially resolved temperature distribution of a TEG system can be examined by thermal imaging. Hotspots or cracks on thermocouples of the TEGs and the thermal resistance of thermal interface materials can also be examined using this technology. The construction of the setup is briefly explained, followed by detailed discussion of the experimental results.

A bottom-up route to enhance thermoelectric figures of merit in graphene nanoribbons

DEFF Research Database (Denmark)

Sevincli, Haldun; Sevik, Cem; Cagin, Tahir

2013-01-01

We propose a hybrid nano-structuring scheme for tailoring thermal and thermoelectric transport properties of graphene nanoribbons. Geometrical structuring and isotope cluster engineering are the elements that constitute the proposed scheme. Using first-principles based force constants and Hamilto......We propose a hybrid nano-structuring scheme for tailoring thermal and thermoelectric transport properties of graphene nanoribbons. Geometrical structuring and isotope cluster engineering are the elements that constitute the proposed scheme. Using first-principles based force constants...... and Hamiltonians, we show that the thermal conductance of graphene nanoribbons can be reduced by 98.8% at room temperature and the thermoelectric figure of merit, ZT, can be as high as 3.25 at T = 800 K. The proposed scheme relies on a recently developed bottom-up fabrication method, which is proven to be feasible...

Thermal conductivity engineering in width-modulated silicon nanowires and thermoelectric efficiency enhancement

Science.gov (United States)

Zianni, Xanthippi

2018-03-01

Width-modulated nanowires have been proposed as efficient thermoelectric materials. Here, the electron and phonon transport properties and the thermoelectric efficiency are discussed for dimensions above the quantum confinement regime. The thermal conductivity decreases dramatically in the presence of thin constrictions due to their ballistic thermal resistance. It shows a scaling behavior upon the width-modulation rate that allows for thermal conductivity engineering. The electron conductivity also decreases due to enhanced boundary scattering by the constrictions. The effect of boundary scattering is weaker for electrons than for phonons and the overall thermoelectric efficiency is enhanced. A ZT enhancement by a factor of 20-30 is predicted for width-modulated nanowires compared to bulk silicon. Our findings indicate that width-modulated nanostructures are promising for developing silicon nanostructures with high thermoelectric efficiency.

Parametric optimization of thermoelectric elements footprint for maximum power generation

DEFF Research Database (Denmark)

Rezania, A.; Rosendahl, Lasse; Yin, Hao

2014-01-01

The development studies in thermoelectric generator (TEG) systems are mostly disconnected to parametric optimization of the module components. In this study, optimum footprint ratio of n- and p-type thermoelectric (TE) elements is explored to achieve maximum power generation, maximum cost......-performance, and variation of efficiency in the uni-couple over a wide range of the heat transfer coefficient on the cold junction. The three-dimensional (3D) governing equations of the thermoelectricity and the heat transfer are solved using the finite element method (FEM) for temperature dependent properties of TE...... materials. The results, which are in good agreement with the previous computational studies, show that the maximum power generation and the maximum cost-performance in the module occur at An/Ap

Controlling the transmission line shape of molecular t-stubs and potential thermoelectric applications

DEFF Research Database (Denmark)

Stadler, Robert; Markussen, Troels

2011-01-01

Asymmetric line shapes can occur in the transmission function describing electron transport in the vicinity of a minimum caused by quantum interference effects. Such asymmetry can be used to increase the thermoelectric efficiency of molecular junctions. So far, however, asymmetric line shapes hav...... calculations for a variety of t-stub molecules and also address their suitability for thermoelectric applications....

Compliant Interfacial Layers in Thermoelectric Devices

Science.gov (United States)

Firdosy, Samad A. (Inventor); Li, Billy Chun-Yip (Inventor); Ravi, Vilupanur A. (Inventor); Fleurial, Jean-Pierre (Inventor); Caillat, Thierry (Inventor); Anjunyan, Harut (Inventor)

2017-01-01

A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.

Interference enhanced thermoelectricity in quinoid type structures

Energy Technology Data Exchange (ETDEWEB)

Strange, M., E-mail: strange@chem.ku.dk; Solomon, G. C. [Nano-Science Center and Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen Ø (Denmark); Seldenthuis, J. S.; Verzijl, C. J. O.; Thijssen, J. M. [Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft (Netherlands)

2015-02-28

Quantum interference (QI) effects in molecular junctions may be used to obtain large thermoelectric responses. We study the electrical conductance G and the thermoelectric response of a series of molecules featuring a quinoid core using density functional theory, as well as a semi-empirical interacting model Hamiltonian describing the π-system of the molecule which we treat in the GW approximation. Molecules with a quinoid type structure are shown to have two distinct destructive QI features close to the frontier orbital energies. These manifest themselves as two dips in the transmission, that remain separated, even when either electron donating or withdrawing side groups are added. We find that the position of the dips in the transmission and the frontier molecular levels can be chemically controlled by varying the electron donating or withdrawing character of the side groups as well as the conjugation length inside the molecule. This feature results in a very high thermoelectric power factor S{sup 2}G and figure of merit ZT, where S is the Seebeck coefficient, making quinoid type molecules potential candidates for efficient thermoelectric devices.

Test System for Thermoelectric Modules and Materials

Science.gov (United States)

Hejtmánek, J.; Knížek, K.; Švejda, V.; Horna, P.; Sikora, M.

2014-10-01

We present a design for a complex measuring device that enables its user to assess the parameters of power-generating thermoelectric modules (TEMs) (or bulk thermoelectric materials) under a wide range of temperatures ( T cold = 25°C to 90°C, T hot TEM, the actual heat flow through the module, and its mechanical load, which can be varied during the measurement. Key components of our testing setup are (i) a measuring chamber where the TEM/material is compressed between thermally shielded heating blocks equipped with a mechanical loading system and water-cooled copper-based cooler, (ii) an electrical load system, (iii) a type K thermocouple array connected to a data acquisition computer, and (iv) a thermostatic water-based cooling system with electronically controlled flow rate and temperature of cooling water. Our testing setup represents a useful tool able to assess, e.g., the thermoelectric parameters of newly developed TEMs and materials or to evaluate the thermoelectric parameters of commercially available modules and materials for comparison with values declared by the manufacturer.

Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

Energy Technology Data Exchange (ETDEWEB)

Duong, Anh Tuan; Rhim, S. H., E-mail: sonny@ulsan.ac.kr; Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2015-01-19

We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

High-entropy alloys as high-temperature thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Shafeie, Samrand [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Guo, Sheng, E-mail: sheng.guo@chalmers.se [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Hu, Qiang [Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Fahlquist, Henrik [Bruker AXS Nordic AB, 17067 Solna (Sweden); Erhart, Paul [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Palmqvist, Anders, E-mail: anders.palmqvist@chalmers.se [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

2015-11-14

Thermoelectric (TE) generators that efficiently recycle a large portion of waste heat will be an important complementary energy technology in the future. While many efficient TE materials exist in the lower temperature region, few are efficient at high temperatures. Here, we present the high temperature properties of high-entropy alloys (HEAs), as a potential new class of high temperature TE materials. We show that their TE properties can be controlled significantly by changing the valence electron concentration (VEC) of the system with appropriate substitutional elements. Both the electrical and thermal transport properties in this system were found to decrease with a lower VEC number. Overall, the large microstructural complexity and lower average VEC in these types of alloys can potentially be used to lower both the total and the lattice thermal conductivity. These findings highlight the possibility to exploit HEAs as a new class of future high temperature TE materials.

Preparation, characterization and thermoelectric properties of a polyaniline matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite

Energy Technology Data Exchange (ETDEWEB)

Ma, Sude; Zeng, Hao; Zhang, Changxing; Liu, Chun; Xu, Qian [Xihua Univ., Chengdu (China). Center for Advanced Materials and Energy; Zhang, Jianjun [Xihua Univ., Chengdu (China). School of Materials Science and Engineering

2017-11-01

In times of industrialization, much low temperature waste heat is released and no viable technology exists which can produce electricity from this low energy density heat. So the long sought-after class thermoelectric (TE) material which directly achieves conversion between thermal and electrical energy obtains much attention. However, the traditional TE materials are alloys of inorganic materials and expensive, and most of them have some level of toxicity, so the research on organic TE materials is very important. The polyaniline (PANI, i. e., a conducting polymer) and PANI matrix Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te composite material were prepared. The chemical structure, microstructure and thermoelectric properties were investigated by FTIR, XRD, SEM and ZEM. Results showed that the molecule chains in the PANI were not ranged very neatly, and Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te in the composite material formed interconnected network as 20 wt.-% Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was added. Power factor of the composite material increased greatly while its ZT was almost two times of PANI. The addition of Ge{sub 0.94}Pb{sub 0.01}Bi{sub 0.05}Te was an effective method to increase the thermoelectric properties of PANI.

Fabrication of flexible thermoelectric microcoolers using planar thin-film technologies

OpenAIRE

Gonçalves, L. M.; Rocha, J. G.; Couto, Carlos; Alpuim, P.; Min, Gao; Rowe, D. M.; Correia, J. H.

2007-01-01

The present work reports on the fabrication and characterization of a planar Peltier cooler on a flexible substrate. The device was fabricated on a 12 νm thick Kapton(c) polyimide substrate using Bi2Te3 and Sb2Te3 thermoelectric elements deposited by thermal co-evaporation. The cold area of the device is cooled with four thermoelectric junctions, connected in series using metal contacts. Plastic substrates add uncommon mechanical properties to the composite film-substrate and enable integrati...

High-pressure densified solid solutions of alkaline earth hexaborides (Ca/Sr, Ca/Ba, Sr/Ba) and their high-temperature thermoelectric properties

International Nuclear Information System (INIS)

Gürsoy, M.; Takeda, M.; Albert, B.

2015-01-01

Solid solutions of alkaline earth hexaborides were synthesized and densified by spark plasma sintering at 100 MPa. The high-temperature thermoelectric properties (Seebeck coefficients, electrical and thermal diffusivities, heat capacities) were measured between room temperature and 1073 K. CaB 6 , SrB 6 , BaB 6 and the ternary hexaborides Ca x Sr 1−x B 6 , Ca x Ba 1−x B 6 , Sr x Ba 1−x B 6 (x = 0.25, 0.5, 0.75) are n-type conducting compounds over the whole compositional and thermal ranges. The values of the figure of merit ZT for CaB 6 (ca. 0.3 at 1073 K) were found to be significantly increased compared to earlier investigations which is attributed to the densification process. - Highlights: • Solid solutions of alkaline earth hexaborides were synthesized. • High-temperature thermoelectric properties of mixed calcium borides are excellent. • Spark plasma source densification results in high ZT values. • Borides are rare-earth free and refractory materials

P-type Al-doped Cr-deficient CrN thin films for thermoelectrics

DEFF Research Database (Denmark)

Febvrier, Arnaud le; Van Nong, Ngo; Abadias, Gregory

2018-01-01

Thermoelectric properties of chromium nitride (CrN)-based films grown on c-plane sapphire by dc reactive magnetron sputtering were investigated. In this work, aluminum doping was introduced in CrN (degenerate n-type semiconductor) by co-deposition. Under the present deposition conditions, over......-type/n-type thermoelectric materials based on chromium nitride films, which are cheap and routinely grown on the industrial scale....

Arsenene and Antimonene: Two-Dimensional Materials with High Thermoelectric Figures of Merit

KAUST Repository

Sharma, S.

2017-10-25

We study the thermoelectric properties of As and Sb monolayers (arsenene and antimonene) using density-functional theory and the semiclassical Boltzmann transport approach. The materials show large band gaps combined with low lattice thermal conductivities. Specifically, the small phonon frequencies and group velocities of antimonene lead to an excellent thermoelectric response at room temperature. We show that n-type doping enhances the figure of merit.

Promising bulk nanostructured Cu₂Se thermoelectrics via high throughput and rapid chemical synthesis

DEFF Research Database (Denmark)

Tafti, Mohsen Y.; Ballikaya, Sedat; Khachatourian, Adrine Malek

2016-01-01

of Cu2Se were synthesized. Powder samples and compacted pellets have been characterized in detail for their structural, microstructural and transport properties. α to β phase transition of Cu2Se was confirmed using temperature dependent X-ray powder diffraction and differential scanning calorimetry...... truncated morphology. Through a detailed investigation of different parameters in the compaction process, such as applied load, heating rate, and cooling profiles, pellets with preserved nanostructured grains were obtained. An applied load during the controlled cooling profile was demonstrated to have a big...... impact on the final thermoelectric efficiency of the consolidated pellets. A very high thermoelectric figure of merit (ZT) above 2 was obtained at 900 K for SPS-compacted Cu2Se nanopowders in the absence of the applied load during the controlled cooling step. The obtained ZT exceeds the state of the art...

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k-cubic spin-orbit coupling.

Science.gov (United States)

Mawrie, Alestin; Verma, Sonu; Ghosh, Tarun Kanti

2017-09-01

We investigate effect of k-cubic spin-orbit interaction on electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions θ = (2n+1)π/3 with n=1,2,3. We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of k-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant. © 2017 IOP Publishing Ltd.

Electrical and thermoelectric transport properties of two-dimensional fermionic systems with k-cubic spin-orbit coupling

Science.gov (United States)

Mawrie, Alestin; Verma, Sonu; Kanti Ghosh, Tarun

2017-11-01

We investigate the effect of k-cubic spin-orbit interaction on the electrical and thermoelectric transport properties of two-dimensional fermionic systems. We obtain exact analytical expressions of the inverse relaxation time (IRT) and the Drude conductivity for long-range Coulomb and short-range delta scattering potentials. The IRT reveals that the scattering is completely suppressed along the three directions θ^\\prime = (2n+1)π/3 with n=1, 2, 3 . We also obtain analytical results of the thermopower and thermal conductivity at low temperature. The thermoelectric transport coefficients obey the Wiedemann-Franz law, even in the presence of k-cubic Rashba spin-orbit interaction (RSOI) at low temperature. In the presence of a quantizing magnetic field, the signature of the RSOI is revealed through the appearance of the beating pattern in the Shubnikov-de Haas (SdH) oscillations of thermopower and thermal conductivity in the low magnetic field regime. The empirical formulae for the SdH oscillation frequencies accurately describe the locations of the beating nodes. The beating pattern in magnetothermoelectric measurement can be used to extract the spin-orbit coupling constant.

The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Directory of Open Access Journals (Sweden)

Bahadir Kucukgok

2016-02-01

Full Text Available The III-Nitrides are promising candidate for high efficiency thermoelectric (TE materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x =  0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K−1 and 21.84 × 10−4 Wm−1K−1 were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature.

The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior

Energy Technology Data Exchange (ETDEWEB)

Kucukgok, Bahadir; Lu, Na, E-mail: Luna@purdue.edu [Lyles School of Civil Engineering, Purdue University, West Lafayette, IN 47907 (United States); Wu, Xuewang; Wang, Xiaojia [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liu, Zhiqiang [Institute of Semiconductors, Chinese Academy of Science, Beijing (China); Ferguson, Ian T. [College of Engineering and Computing, Missouri University of Science and Technology, Rolla, MO 65409 (United States)

2016-02-15

The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown In{sub x}Ga{sub 1-x}N were investigated for x =  0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 μV K{sup −1} and 21.84 × 10{sup −4} Wm{sup −1}K{sup −1} were observed, respectively for In{sub 0.07}Ga{sub 0.93}N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In{sub 0.20}Ga{sub 0.80}N alloy at room temperature.

Large thermoelectric efficiency of doped polythiophene junction: A density functional study

Science.gov (United States)

Golsanamlou, Zahra; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

2018-06-01

The thermoelectric properties of polythiophene (PT) coupled to the Au (111) electrodes are studied based on density functional theory with nonequilibrium Green function formalism. Specially, the effect of Li and Cl adsorbents on the thermoelectric efficiency of the PT junction is investigated in different concentrations of the dopants for two lengths of the PT. Results show that the presence of dopants can bring the structural changes in the oligomer and modify the arrangement of the molecular levels leading to the dramatic changes in the transmission spectra of the junction. Therefore, the large enhancement in thermopower and consequently figure of merit is obtained by dopants which makes the doped PT junction as a beneficial thermoelectric device.

Solar thermoelectric generator

Science.gov (United States)

Toberer, Eric S.; Baranowski, Lauryn L.; Warren, Emily L.

2016-05-03

Solar thermoelectric generators (STEGs) are solid state heat engines that generate electricity from concentrated sunlight. A novel detailed balance model for STEGs is provided and applied to both state-of-the-art and idealized materials. STEGs can produce electricity by using sunlight to heat one side of a thermoelectric generator. While concentrated sunlight can be used to achieve extremely high temperatures (and thus improved generator efficiency), the solar absorber also emits a significant amount of black body radiation. This emitted light is the dominant loss mechanism in these generators. In this invention, we propose a solution to this problem that eliminates virtually all of the emitted black body radiation. This enables solar thermoelectric generators to operate at higher efficiency and achieve said efficient with lower levels of optical concentration. The solution is suitable for both single and dual axis solar thermoelectric generators.

Modeling and Experimentation of New Thermoelectric Cooler–Thermoelectric Generator Module

Directory of Open Access Journals (Sweden)

Khaled Teffah

2018-03-01

Full Text Available In this work, a modeling and experimental study of a new thermoelectric cooler–thermoelectric generator (TEC-TEG module is investigated. The studied module is composed of TEC, TEG and total system heatsink, all connected thermally in series. An input voltage (1–5 V passes through the TEC where the electrons by means of Peltier effect entrain the heat from the upper side of the module to the lower one creating temperature difference; TEG plays the role of a partial heatsink for the TEC by transferring this waste heat to the total system heatsink and converting an amount of this heat into electricity by a phenomenon called Seebeck effect, of the thermoelectric modules. The performance of the TEG as partial heatsink of TEC at different input voltages is demonstrated theoretically using the modeling software COMSOL Multiphysics. Moreover, the experiment validates the simulation result which smooths the path for a new manufacturing thermoelectric cascade model for the cooling and the immediate electric power generation.

Thermoelectric power in ionic and electronic mixed conductors

Energy Technology Data Exchange (ETDEWEB)

Kamata, Masahiro; Jin-nouchi, Kenji; Esaka, Takao [Tottori Univ. (Japan). Faculty of Engineering

1996-08-01

In order to study the thermoelectric property of the oxide ionic and electronic mixed conductor of 10 mol% CaO-doped CeO{sub 2} (CDC), a new type of thermocell was prepared, in which platinum electrodes were embedded in the tube-type sample to diminish the large temperature gradient over the electrodes due to the local heat radiation from heating furnace. Using this thermocell, reproducible data were obtained. The thermoelectric power measured in CDC under various oxygen atmospheres (Po{sub 2}) from 1.0 to about 10{sup -15} atm showed that the sign of Seebeck coefficients changed from minus to plus. This variation of Seebeck coefficients vs. Po{sub 2} was well interpreted by considering that (1) the thermoelectric power could be a driving force to make actual and electrochemical oxygen transfer in the mixed conductor and (2) the electrode processes had limiting rates due to slow oxygen diffusion (or oxygen gas exhaustion at the cathode and evolution at the anode). (author)

A lightweight scalable agarose-gel-synthesized thermoelectric composite

Science.gov (United States)

Kim, Jin Ho; Fernandes, Gustavo E.; Lee, Do-Joong; Hirst, Elizabeth S.; Osgood, Richard M., III; Xu, Jimmy

2018-03-01

Electronic devices are now advancing beyond classical, rigid systems and moving into lighweight flexible regimes, enabling new applications such as body-wearables and ‘e-textiles’. To support this new electronic platform, composite materials that are highly conductive yet scalable, flexible, and wearable are needed. Materials with high electrical conductivity often have poor thermoelectric properties because their thermal transport is made greater by the same factors as their electronic conductivity. We demonstrate, in proof-of-principle experiments, that a novel binary composite can disrupt thermal (phononic) transport, while maintaining high electrical conductivity, thus yielding promising thermoelectric properties. Highly conductive Multi-Wall Carbon Nanotube (MWCNT) composites are combined with a low-band gap semiconductor, PbS. The work functions of the two materials are closely matched, minimizing the electrical contact resistance within the composite. Disparities in the speed of sound in MWCNTs and PbS help to inhibit phonon propagation, and boundary layer scattering at interfaces between these two materials lead to large Seebeck coefficient (> 150 μV/K) (Mott N F and Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon), p 47) and a power factor as high as 10 μW/(K2 m). The overall fabrication process is not only scalable but also conformal and compatible with large-area flexible hosts including metal sheets, films, coatings, possibly arrays of fibers, textiles and fabrics. We explain the behavior of this novel thermoelectric material platform in terms of differing length scales for electrical conductivity and phononic heat transfer, and explore new material configurations for potentially lightweight and flexible thermoelectric devices that could be networked in a textile.

Thermoelectric neutron dosimetry: a short introduction

International Nuclear Information System (INIS)

Mathieu, F.; Meier, R.; Debrue, J.; Leonard, F.; Schubert, W.

1977-01-01

The paper gives a short introduction and state-of-the-art account of an unconventional, non destructive neutron dosimetry method based on monitoring the neutron fluence dependent changes of the thermoelectric properties of base metals and alloys. The basic principles are exposed and illustrated with experimental data obtained during an exploratory irradiation in the BR2 reactor

Microstructure and mechanical properties of thermoelectric nanostructured n-type silicon-germanium alloys synthesized employing spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Bathula, Sivaiah [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Department of Applied Physics, Delhi Technological University, Delhi (India); Gahtori, Bhasker; Tripathy, S. K.; Tyagi, Kriti; Srivastava, A. K.; Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Jayasimhadri, M. [Department of Applied Physics, Delhi Technological University, Delhi (India)

2014-08-11

Owing to their high thermoelectric (TE) figure-of-merit, nanostructured Si{sub 80}Ge{sub 20} alloys are evolving as a potential replacement for their bulk counterparts in designing efficient radio-isotope TE generators. However, as the mechanical properties of these alloys are equally important in order to avoid in-service catastrophic failure of their TE modules, we report the strength, hardness, fracture toughness, and thermal shock resistance of nanostructured n-type Si{sub 80}Ge{sub 20} alloys synthesized employing spark plasma sintering of mechanically alloyed nanopowders of its constituent elements. These mechanical properties show a significant enhancement, which has been correlated with the microstructural features at nano-scale, delineated by transmission electron microscopy.

Effect of bath temperature on structure, morphology and thermoelectric properties of CoSb{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Suchitra, E-mail: suchitrayadav87@gmail.com; Pandya, Dinesh K.; Chaudhary, Sujeet [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi-110016 (India)

2016-05-23

CoSb{sub 3} thin films are deposited on conducting glass substrates (FTO) by electrodeposition at different bath temperatures (60°C, 70°C and 80°C) and the resulting influence of the bath temperature on the structure, morphology and electrical properties of films is investigated. X-ray diffraction confirms the formation of CoSb{sub 3} phase in the films. Scanning electron microscopy reveals that different morphologies ranging from branched nano-flakes to nano-needles evolve as bath temperature increases. It is concluded that a growth temperature of 80°C is suitable for producing CoSb{sub 3} films with such properties that show potential feasibility for thermoelectric applications.

Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

Directory of Open Access Journals (Sweden)

Sarita Boolchandani

2018-01-01

Full Text Available The indium selenium (InSe bilayer thin films of various thickness ratios, InxSe(1-x (x = 0.25, 0.50, 0.75, were deposited on a glass substrate keeping overall the same thickness of 2500 Ǻ using thermal evaporation method under high vacuum atmosphere. Electrical, optical, and structural properties of these bilayer thin films have been compared before and after thermal annealing at different temperatures. The structural and morphological characterization was done using XRD and SEM, respectively. The optical bandgap of these thin films has been calculated by Tauc’s relation that varies within the range of 1.99 to 2.05 eV. A simple low-cost thermoelectrical power measurement setup is designed which can measure the Seebeck coefficient “S” in the vacuum with temperature variation. The setup temperature variation is up to 70°C. This setup contains a Peltier device TEC1-12715 which is kept between two copper plates that act as a reference metal. Also, in the present work, the thermoelectric power of indium selenide (InSe and aluminum selenide (AlSe bilayer thin films prepared and annealed in the same way is calculated. The thermoelectric power has been measured by estimating the Seebeck coefficient for InSe and AlSe bilayer thin films. It was observed that the Seebeck coefficient is negative for InSe and AlSe thin films.

Thermoelectric properties of In-substituted Ge-based clathrates prepared by HPHT

Directory of Open Access Journals (Sweden)

Binwu Liu

2018-03-01

Full Text Available Bulk materials Ba8Ga16InxGe30-x (x = 0.5, 1.0, 1.5 were prepared by High-Pressure and High-Temperature (HPHT method and the crystal structure has been confirmed by X-ray diffraction and cell refinement. The actual In composition was much lower than the starting composition, and lattice constants increased with the increase of substitution. As the temperature increased, the Seebeck coefficient and electrical resistivity increased first and then decreased, while the thermal conductivity was the opposite, which leads to significant enhancement on thermoelectric properties of the clathrates. The substitution of indium elements decreased the seebeck coefficient and electrical resistivity, and also changed the microstructure of the compounds. A minimum thermal conductivity of 0.84 Wm−1K−1 was obtained, and a good ZT value of 0.52 was achieved. The grain boundaries and lattice defects generated by high pressure can effectively scatter phonons of different frequencies, which reduce the lattice thermal conductivity.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

Science.gov (United States)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Thermoelectric Power Factor Limit of a 1D Nanowire

Science.gov (United States)

Chen, I.-Ju; Burke, Adam; Svilans, Artis; Linke, Heiner; Thelander, Claes

2018-04-01

In the past decade, there has been significant interest in the potentially advantageous thermoelectric properties of one-dimensional (1D) nanowires, but it has been challenging to find high thermoelectric power factors based on 1D effects in practice. Here we point out that there is an upper limit to the thermoelectric power factor of nonballistic 1D nanowires, as a consequence of the recently established quantum bound of thermoelectric power output. We experimentally test this limit in quasiballistic InAs nanowires by extracting the maximum power factor of the first 1D subband through I -V characterization, finding that the measured maximum power factors conform to the theoretical limit. The established limit allows the prediction of the achievable power factor of a specific nanowire material system with 1D electronic transport based on the nanowire dimension and mean free path. The power factor of state-of-the-art semiconductor nanowires with small cross section and high crystal quality can be expected to be highly competitive (on the order of mW /m K2 ) at low temperatures. However, they have no clear advantage over bulk materials at, or above, room temperature.

Design of improved controller for thermoelectric generator used in distributed generation

Energy Technology Data Exchange (ETDEWEB)

Molina, M.G. [CONICET, Instituto de Energia Electrica, Universidad Nacional de San Juan, Av. Libertador San Martin Oeste, 1109, J5400ARL, San Juan (Argentina); Juanico, L.E. [CONICET, Centro Atomico Bariloche, 8400 Bariloche (Argentina); Rinalde, G.F.; Taglialavore, E.; Gortari, S. [Centro Atomico Bariloche, 8400 Bariloche (Argentina)

2010-06-15

This paper investigates the application of thermal generation based on solid-state devices such as thermoelectric generators (TEGs) as a novel technological alternative of distributed generation (DG). The full detailed modeling and the dynamic simulation of a three-phase grid-connected TEG used as a dispersed generator is studied. Moreover, a new control scheme of the TEG is proposed, which consists of a multi-level hierarchical structure and incorporates a maximum power point tracker (MPPT) for better use of the thermal resource. In addition, reactive power compensation of the electric grid is included, operating simultaneously and independently of the active power generation. Validation of models and control schemes is performed by using the MATLAB/Simulink environment. Moreover, a small-scale TEG experimental set-up was employed to demonstrate the accuracy of proposed models. (author)

Thermoelectric Properties in the TiO2/SnO2 System

Science.gov (United States)

Dynys, F.; Sayir, A.; Sehirlioglu, A.; Berger, M.

2009-01-01

Nanotechnology has provided a new interest in thermoelectric technology. A thermodynamically driven process is one approach in achieving nanostructures in bulk materials. TiO2/SnO2 system exhibits a large spinodal region with exceptional stable phase separated microstructures up to 1400 C. Fabricated TiO2/SnO2 nanocomposites exhibit n-type behavior with Seebeck coefficients greater than -300 .V/K. Composites exhibit good thermal conductance in the range of 7 to 1 W/mK. Dopant additions have not achieved high electrical conductivity (<1000 S/m). Formation of oxygen deficient composites, TixSn1-xO2-y, can change the electrical conductivity by four orders of magnitude. Achieving higher thermoelectric ZT by oxygen deficiency is being explored. Seebeck coeffcient, thermal conductivity, electrical conductance and microstructure will be discussed in relation to composition and doping.

High Tc Superconducting Magnet Excited by a Semiconductor Thermoelectric Element

Science.gov (United States)

Kuriyama, T.; Ono, M.; Tabe, S.; Oguchi, A.; Okamura, T.

2006-04-01

A high Tc superconducting (HTS) magnet excited by a thermal electromotive force of a thermoelectric element is studied. This HTS magnet has the advantages of compactness, lightweight and continuous excitation in comparison with conventional HTS magnets, because this HTS magnet does not need a large external power source. In this system, a heat input into the cryogenic environment is necessary to excite the thermoelectric element for constant operation. This heat generation, however, causes a rise in temperature of an HTS coil and reduces the system performance. In this paper, a newly designed magnet system which adopted a two-stage GM cryocooler was investigated. It enabled us to control the temperature of a thermoelectric element and that of an HTS coil independently. The temperature of the HTS coil could be kept at 10-20 K at the second stage of the GM cryocooler, while the thermoelectric element could be excited at higher temperature in the range of 50-70 K at the first stage, where the performance of the thermoelectric element was higher. The experimental results on this HTS magnet are shown and the possibility of the thermoelectric element as a main power source of the HTS magnets is discussed.

Universal Majorana thermoelectric noise

Science.gov (United States)

Smirnov, Sergey

2018-04-01

Thermoelectric phenomena resulting from an interplay between particle flows induced by electric fields and temperature inhomogeneities are extremely insightful as a tool providing substantial knowledge about the microscopic structure of a given system. By tuning, e.g., parameters of a nanoscopic system coupled via tunneling mechanisms to two contacts, one may achieve various situations where the electric current induced by an external bias voltage competes with the electric current excited by the temperature difference of the two contacts. Even more exciting physics emerges when the system's electronic degrees freedom split to form Majorana fermions which make the thermoelectric dynamics universal. Here, we propose revealing these unique universal signatures of Majorana fermions in strongly nonequilibrium quantum dots via noise of the thermoelectric transport beyond linear response. It is demonstrated that whereas mean thermoelectric quantities are only universal at large-bias voltages, the noise of the electric current excited by an external bias voltage and the temperature difference of the contacts is universal at any bias voltage. We provide truly universal, i.e., independent of the system's parameters, thermoelectric ratios between nonlinear response coefficients of the noise and mean current at large-bias voltages where experiments may easily be performed to uniquely detect these truly universal Majorana thermoelectric signatures.

NREL Research Yields Significant Thermoelectric Performance | News | NREL

Science.gov (United States)

Chemical and Materials Science and Technology center, said the introduction of SWCNT into fabrics could from an exemplary SWNCT thin film improved thermoelectric properties. The newest paper revealed that that the same SWCNT thin film achieved identical performance when doped with either positive or

Thermoelectric Materials

Science.gov (United States)

Gao, Peng; Berkun, Isil; Schmidt, Robert D.; Luzenski, Matthew F.; Lu, Xu; Bordon Sarac, Patricia; Case, Eldon D.; Hogan, Timothy P.

2014-06-01

Mg2(Si,Sn) compounds are promising candidate low-cost, lightweight, nontoxic thermoelectric materials made from abundant elements and are suited for power generation applications in the intermediate temperature range of 600 K to 800 K. Knowledge on the transport and mechanical properties of Mg2(Si,Sn) compounds is essential to the design of Mg2(Si,Sn)-based thermoelectric devices. In this work, such materials were synthesized using the molten-salt sealing method and were powder processed, followed by pulsed electric sintering densification. A set of Mg2.08Si0.4- x Sn0.6Sb x (0 ≤ x ≤ 0.072) compounds were investigated, and a peak ZT of 1.50 was obtained at 716 K in Mg2.08Si0.364Sn0.6Sb0.036. The high ZT is attributed to a high electrical conductivity in these samples, possibly caused by a magnesium deficiency in the final product. The mechanical response of the material to stresses is a function of the elastic moduli. The temperature-dependent Young's modulus, shear modulus, bulk modulus, Poisson's ratio, acoustic wave speeds, and acoustic Debye temperature of the undoped Mg2(Si,Sn) compounds were measured using resonant ultrasound spectroscopy from 295 K to 603 K. In addition, the hardness and fracture toughness were measured at room temperature.

Simple experiments with a thermoelectric module

International Nuclear Information System (INIS)

Kraftmakher, Yaakov

2005-01-01

The Seebeck and Peltier effects are explored with a commercially available thermoelectric module and a data-acquisition system. Five topics are presented: (i) thermoelectric heating and cooling, (ii) the Seebeck coefficient, (iii) efficiency of a thermoelectric generator, (iv) the maximum temperature difference provided by a thermoelectric cooler and (v) the Peltier coefficient and the coefficient of performance. Using a data-acquisition system, the measurements are carried out in a reasonably short time. It is shown how to deduce quantities important for the theory and applications of thermoelectric devices

Controlled thermoelectric response of a tunable Rashba coupled metal-insulator-superconductor junction

Science.gov (United States)

Kapri, Priyadarshini; Adhikary, Priyanka; Sinha, Shubham; Basu, Saurabh

2018-05-01

Thermoelectric effect for metal, insulator and the superconductor junctions has been studied with Rashba spin-orbit coupling (RSOC) being present at the interfaces via modified Blonder-Tinkham-Klapwijk (BTK) theory. We find that the thermopower, as a function of an effective barrier potential that characterizes the intermediate insulating layer, displays an oscillatory behavior. Interesting interplay between the strength of RSOC and the effective barrier potential has been carried out in details in this regard. For specific ranges of the effective barrier potential, RSOC enhances the thermopower, while the reverse happens for other values. Moreover it is found that the effective barrier potential plays a crucial role in determining the thermopower spectrum. For a tunable Rashba coupling, the thermopower of the junction can be controlled with precision, which may useful for the thermoelectric applications, at low temperatures. Further the efficiency of the system is obtained for different pairing correlations of the superconducting lead where we find that the system with a d-wave symmetry is more efficient as compared to a s-wave correlation, in some selective regions of effective barrier potential. It is found that for some selective regions of effective barrier potential, the efficiency of the system increases with RSOC and the opposite happens for other values.

3D printing of shape-conformable thermoelectric materials using all-inorganic Bi2Te3-based inks

Science.gov (United States)

Kim, Fredrick; Kwon, Beomjin; Eom, Youngho; Lee, Ji Eun; Park, Sangmin; Jo, Seungki; Park, Sung Hoon; Kim, Bong-Seo; Im, Hye Jin; Lee, Min Ho; Min, Tae Sik; Kim, Kyung Tae; Chae, Han Gi; King, William P.; Son, Jae Sung

2018-04-01

Thermoelectric energy conversion offers a unique solution for generating electricity from waste heat. However, despite recent improvements in the efficiency of thermoelectric materials, the widespread application of thermoelectric generators has been hampered by challenges in fabricating thermoelectric materials with appropriate dimensions to perfectly fit heat sources. Herein, we report an extrusion-based three-dimensional printing method to produce thermoelectric materials with geometries suitable for heat sources. All-inorganic viscoelastic inks were synthesized using Sb2Te3 chalcogenidometallate ions as inorganic binders for Bi2Te3-based particles. Three-dimensional printed materials with various geometries showed homogenous thermoelectric properties, and their dimensionless figure-of-merit values of 0.9 (p-type) and 0.6 (n-type) were comparable to the bulk values. Conformal cylindrical thermoelectric generators made of 3D-printed half rings mounted on an alumina pipe were studied both experimentally and computationally. Simulations show that the power output of the conformal, shape-optimized generator is higher than that of conventional planar generators.

Thermoelectric Response in Single Quintuple Layer Bi2Te3

KAUST Repository

Sharma, S.

2016-10-05

Because Bi2Te3 belongs to the most important thermoelectric materials, the successful exfoliation of a single quintuple layer has opened access to an interesting two-dimensional material. For this reason, we study the thermoelectric properties of single quintuple layer Bi2Te3 by considering both the electron and phonon transport. On the basis of first-principles density functional theory, the electronic and phononic contributions are calculated by solving Boltzmann transport equations. The dependence of the lattice thermal conductivity on the phonon mean free path is evaluated along with the contributions of the acoustic and optical branches. We find that the thermoelectric response is significantly better for p- than for n-doping. By optimizing the carrier concentration, at 300 K, a ZT value of 0.77 is achieved, which increases to 2.42 at 700 K.

Apparatuses And Systems For Embedded Thermoelectric Generators

KAUST Repository

Hussain, Muhammad M.; Inayat, Salman Bin; Smith, Casey Eben

2013-01-01

An apparatus and a system for embedded thermoelectric generators are disclosed. In one embodiment, the apparatus is embedded in an interface where the ambient temperatures on two sides of the interface are different. In one embodiment, the apparatus is fabricated with the interface in integrity as a unitary piece. In one embodiment, the apparatus includes a first thermoelectric material embedded through the interface. The apparatus further includes a second thermoelectric material embedded through the interface. The first thermoelectric material is electrically coupled to the second thermoelectric material. In one embodiment, the apparatus further includes an output structure coupled to the first thermoelectric material and the second thermoelectric material and configured to output a voltage.

Apparatuses And Systems For Embedded Thermoelectric Generators

KAUST Repository

Hussain, Muhammad M.

2013-08-08

An apparatus and a system for embedded thermoelectric generators are disclosed. In one embodiment, the apparatus is embedded in an interface where the ambient temperatures on two sides of the interface are different. In one embodiment, the apparatus is fabricated with the interface in integrity as a unitary piece. In one embodiment, the apparatus includes a first thermoelectric material embedded through the interface. The apparatus further includes a second thermoelectric material embedded through the interface. The first thermoelectric material is electrically coupled to the second thermoelectric material. In one embodiment, the apparatus further includes an output structure coupled to the first thermoelectric material and the second thermoelectric material and configured to output a voltage.

Thermoelectric properties of unoxidized graphene/Bi{sub 2}Te{sub 2.7}Se{sub 0.3} composites synthesized by exfoliation/re-assembly method

Energy Technology Data Exchange (ETDEWEB)

Kim, Jin Il; Lee, Eun Sil; Kim, Jong-Young [Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Gyeonggi-do (Korea, Republic of); Choi, Soon-Mok [School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan (Korea, Republic of); Lee, Kyu Hyoung [Materials R and D Center, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Won-Seon [Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul (Korea, Republic of)

2014-04-15

Nanocomposites of n-type thermoelectric Bi{sub 2}Te{sub 2.7}Se{sub 0.3} (BTS) and unoxidized graphene (UG) were prepared from the exfoliated BTS and UG nanoplatelets. Polycrystalline BTS ingots were exfoliated into nanoscroll-type crystals by chemical exfoliation, and were re-assembled with UG nanoplatelets. The composites were chemically reduced by hydrazine hydrate and sintered by a spark-plasma-sintering method. The thermoelectric properties of the sintered composites were evaluated and exhibited decreased carrier concentration and increased thermal conductivity due to the embedded graphene. The peak ZT values for the UG/BTS-US and UG/BTS-EX composites were ∝0.8 at the UG concentration of 0.05 wt%. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The Influence of Spark Plasma Sintering Temperature on the Microstructure and Thermoelectric Properties of Al,Ga Dual-Doped ZnO

DEFF Research Database (Denmark)

Han, Li; Le, Thanh Hung; Van Nong, Ngo

2013-01-01

ZnO dual-doped with Al and Ga was prepared by spark plasma sintering using different sintering temperatures. The microstructural evolution and thermoelectric properties of the samples were investigated in detail. The samples obtained with sintering temperature above 1223 K had higher relative...... of ZnO particles and microstructure evolution at different sintering temperatures were investigated by simulation of the self-Joule-heating effect of the individual particles....

Doping in controlling the type of conductivity in bulk and nanostructured thermoelectric materials

International Nuclear Information System (INIS)

Fuks, D.; Komisarchik, G.; Kaller, M.; Gelbstein, Y.

2016-01-01

Doping of materials for thermoelectric applications is widely used nowadays to control the type of conductivity. We report the results of ab-initio calculations aimed at developing the consistent scheme for determining the role of impurities that may change the type of conductivity in two attractive thermoelectric classes of materials. It is demonstrated that alloying of TiNiSn with Cu makes the material of n-type, and alloying with Fe leads to p-type conductivity. Similar calculations for PbTe with small amount of Na substituting for Pb leads to p-type conductivity, while Cl substituting for Te makes PbTe an n-type material. It is shown also that for nano-grained materials the n-type conductivity should be observed. The effect of impurities segregating to the grain boundaries in nano-structured PbTe is also discussed. - Highlights: • Bulk and nano-grained TE materials were analyzed by DFT. • The electronic effects on both PbTe and TiNiSn were demonstrated. • The role of impurities on the conductivity type was analyzed. • Interfacial states in nano-grained PbTe affect the conductivity type.

Thermoelectric characterization of Sb{sub 2}Te{sub 3} thin films deposited by ALD

Energy Technology Data Exchange (ETDEWEB)

Zastrow, Sebastian; Schumacher, Christian; Nielsch, Kornelius [University of Hamburg (Germany); Regus, Matthias [University of Kiel (Germany); Schulz, Stephan [University of Duisburg-Essen (Germany)

2012-07-01

Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb{sub 2}Te{sub 3}) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb{sub 2}Te{sub 3} ALD thin films have not been reported yet. Based on the work of Pore et al., Sb{sub 2}Te{sub 3} is deposited with a home-made reactor on SiO{sub 2} by using (Et{sub 3}Si){sub 2}Te and SbCl{sub 3}. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K. The authors would like to thank the ''Karl-Vossloh-Stiftung''.

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

Science.gov (United States)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Science.gov (United States)

Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

2015-06-01

N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

Correlating thermoelectric properties with microstructure in Bi0.8Sb0.2 thin films

Science.gov (United States)

Siegal, M. P.; Lima-Sharma, A. L.; Sharma, P. A.; Rochford, C.

2017-04-01

The room temperature electronic transport properties of 100 nm-thick thermoelectric Bi0.8Sb0.2 films, sputter-deposited onto quartz substrates and post-annealed in an ex-situ furnace, systematically correlate with the overall microstructural quality, improving with increasing annealing temperature until close to the melting point for the alloy composition. The optimized films have high crystalline quality with ˜99% of the grains oriented with the trigonal axis perpendicular to the substrate surface. Film resistivities and Seebeck coefficients are accurately measured by preventing deleterious surface oxide formation via a SiN capping layer and using Nd-doped Al for contacts. The resulting values are similar to single crystals and significantly better than previous reports from films and polycrystalline bulk alloys.

Thermoelectric detection of inclusions in metallic biomaterials by magnetic sensing

Directory of Open Access Journals (Sweden)

Hector Carreon

2017-05-01

Full Text Available The detectability of small inclusions and subtle imperfections by magnetic measurements that senses thermoelectric currents produced by a temperature gradient is ultimately limited by the intrinsic thermoelectric anisotropy and inhomogeneity of the material to be inspected. The probability of detection (POD of a given material flaw is determined by the resulting signal-to-noise ratio rather than by the absolute magnitude of the signal itself. The strength of the magnetic field to be detected greatly depends on the physical nature of the host medium and dimensions of the imperfection. This paper presents experimental data for the magnetic field produced by thermoelectric currents around tin inclusions in different host medium such as 316LVM stainless steel and Ti-6Al-4V titanium alloy under external thermal excitation. The diameter of the inclusions and the lift-off distance varied from 0.39 to 3.175 mm and from 1 to 10 mm, respectively. A 0.6 °C/cm temperature gradient in the samples produced peak magnetic flux densities ranging from 0.1 to 280 nT, that was measured by a fluxgate magnetometer. The numerical results were found to be in good agreement with theoretical predictions and demonstrated that both property anisotropy and gradient in thermoelectric materials can significantly influence the induced thermoelectric currents and magnetic fields.

Thermoelectric detection of inclusions in metallic biomaterials by magnetic sensing

Science.gov (United States)

Carreon, Hector

2017-05-01

The detectability of small inclusions and subtle imperfections by magnetic measurements that senses thermoelectric currents produced by a temperature gradient is ultimately limited by the intrinsic thermoelectric anisotropy and inhomogeneity of the material to be inspected. The probability of detection (POD) of a given material flaw is determined by the resulting signal-to-noise ratio rather than by the absolute magnitude of the signal itself. The strength of the magnetic field to be detected greatly depends on the physical nature of the host medium and dimensions of the imperfection. This paper presents experimental data for the magnetic field produced by thermoelectric currents around tin inclusions in different host medium such as 316LVM stainless steel and Ti-6Al-4V titanium alloy under external thermal excitation. The diameter of the inclusions and the lift-off distance varied from 0.39 to 3.175 mm and from 1 to 10 mm, respectively. A 0.6 °C/cm temperature gradient in the samples produced peak magnetic flux densities ranging from 0.1 to 280 nT, that was measured by a fluxgate magnetometer. The numerical results were found to be in good agreement with theoretical predictions and demonstrated that both property anisotropy and gradient in thermoelectric materials can significantly influence the induced thermoelectric currents and magnetic fields.

Impact of the Topological Surface State on the Thermoelectric Transport in Sb2Te3 Thin Films.

Science.gov (United States)

Hinsche, Nicki F; Zastrow, Sebastian; Gooth, Johannes; Pudewill, Laurens; Zierold, Robert; Rittweger, Florian; Rauch, Tomáš; Henk, Jürgen; Nielsch, Kornelius; Mertig, Ingrid

2015-04-28

Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb2Te3 films are presented. The thickness-dependent electrical conductivity and the thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Contributions of the bulk and the surface to the transport coefficients are separated, which enables to identify a clear impact of the topological surface state on the thermoelectric properties. When the charge carrier concentration is tuned, a crossover between a surface-state-dominant and a Fuchs-Sondheimer transport regime is achieved. The calculations are corroborated by thermoelectric transport measurements on Sb2Te3 films grown by atomic layer deposition.

Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

Energy Technology Data Exchange (ETDEWEB)

Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

2015-03-25

Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

Impact of thermoelectric phenomena on phase-change memory performance metrics and scaling

International Nuclear Information System (INIS)

Lee, Jaeho; Asheghi, Mehdi; Goodson, Kenneth E

2012-01-01

The coupled transport of heat and electrical current, or thermoelectric phenomena, can strongly influence the temperature distribution and figures of merit for phase-change memory (PCM). This paper simulates PCM devices with careful attention to thermoelectric transport and the resulting impact on programming current during the reset operation. The electrothermal simulations consider Thomson heating within the phase-change material and Peltier heating at the electrode interface. Using representative values for the Thomson and Seebeck coefficients extracted from our past measurements of these properties, we predict a cell temperature increase of 44% and a decrease in the programming current of 16%. Scaling arguments indicate that the impact of thermoelectric phenomena becomes greater with smaller dimensions due to enhanced thermal confinement. This work estimates the scaling of this reduction in programming current as electrode contact areas are reduced down to 10 nm × 10 nm. Precise understanding of thermoelectric phenomena and their impact on device performance is a critical part of PCM design strategies. (paper)

Powder metallurgical processing of functionally graded p-Pb1-x Sn x Te materials for thermoelectric applications

International Nuclear Information System (INIS)

Gelbstein, Y.; Dashevsky, Z.; Dariel, M.P.

2007-01-01

Lead tin telluride-based compounds are p-type materials for thermoelectric applications, in the 50-600 deg. C temperature range. The electronic transport properties of PbTe and Pb 1- x Sn x Te materials are strongly dependent on the processing approach. Powder metallurgy is a suitable approach for the preparation of Functionally graded materials (FGMs) but its effects on the electronic properties have to be carefully checked. Powder metallurgical processing may introduce atomic defects and local strains into the material and, thereby, alter the carrier concentration. Such material may be in non-equilibrium conditions at the operating temperature with unstable thermoelectric properties. This effect can be reduced and eliminated by appropriate annealing procedures. In FGMs, annealing up to the stabilization of the thermoelectric properties is mandatory for achieving the desired carrier concentration profile along the sample. The design procedures of the FGMs, as well as the annealing effects on cold compacted and sintered Pb 1- x Sn x Te samples are described in details

Thermoelectric Conversion of Waste Heat to Electricity in an IC Engine Powered Vehicle

Energy Technology Data Exchange (ETDEWEB)

None

2012-01-31

The thermoelectric generator shorting system provides the capability to monitor and short-out individual thermoelectric couples in the event of failure. This makes the series configured thermoelectric generator robust to individual thermoelectric couple failure. Open circuit detection of the thermoelectric couples and the associated short control is a key technique to ensure normal functionality of the TE generator under failure of individual TE couples. This report describes a five-year effort whose goal was the understanding the issues related to the development of a thermoelectric energy recovery device for a Class-8 truck. Likely materials and important issues related to the utility of this generator were identified. Several prototype generators were constructed and demonstrated. The generators developed demonstrated several new concepts including advanced insulation, couple bypass technology and the first implementation of skutterudite thermoelectric material in a generator design. Additional work will be required to bring this system to fruition. However, such generators offer the possibility of converting energy that is otherwise wasted to useful electric power. Uur studies indicate that this can be accomplished in a cost-effective manner for this application.

Thermoelectricity Generation and Electron-Magnon Scattering in a Natural Chalcopyrite Mineral from a Deep-Sea Hydrothermal Vent.

Science.gov (United States)

Ang, Ran; Khan, Atta Ullah; Tsujii, Naohito; Takai, Ken; Nakamura, Ryuhei; Mori, Takao

2015-10-26

Current high-performance thermoelectric materials require elaborate doping and synthesis procedures, particularly in regard to the artificial structure, and the underlying thermoelectric mechanisms are still poorly understood. Here, we report that a natural chalcopyrite mineral, Cu1+x Fe1-x S2 , obtained from a deep-sea hydrothermal vent can directly generate thermoelectricity. The resistivity displayed an excellent semiconducting character, and a large thermoelectric power and high power factor were found in the low x region. Notably, electron-magnon scattering and a large effective mass was detected in this region, thus suggesting that the strong coupling of doped carriers and antiferromagnetic spins resulted in the natural enhancement of thermoelectric properties during mineralization reactions. The present findings demonstrate the feasibility of thermoelectric energy generation and electron/hole carrier modulation with natural materials that are abundant in the Earth's crust. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-Dimensional Tellurene as Excellent Thermoelectric Material

KAUST Repository

Sharma, Sitansh

2018-04-20

We study the thermoelectric properties of two-dimensional tellurene by first-principles calculations and semiclassical Boltzmann transport theory. The HSE06 hybrid functional results in a moderate direct band gap of 1.48 eV at the Γ point. A high room temperature Seebeck coefficient (Sxx = 0.38 mV/K, Syy = 0.36 mV/K) is combined with anisotropic lattice thermal conductivity (κxxl = 0.43 W/m K, κyyl = 1.29 W/m K). Phonon band structures demonstrate a key role of optical phonons in the record low thermal conductivity that leads to excellent thermoelectric performance of tellurene. At room temperature and moderate hole doping of 1.2 × 10–11 cm–2, for example, a figure of merit of ZTxx = 0.8 is achieved.

Nanocomposites with High Thermoelectric Figures of Merit

Science.gov (United States)

Chen, Gang (Inventor); Dresselhaus, Mildred (Inventor); Ren, Zhifeng (Inventor)

2015-01-01

The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5k(sub B)T, wherein k(sub B) is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Thermoelectric properties of β-boron and some boron compounds. Final report, August 1981-September 1984

International Nuclear Information System (INIS)

Slack, G.A.; Rosolowski, J.H.; Miller, M.L.; Huseby, I.C.

1984-12-01

The thermoelectric properties, that is the Seebeck coefficient, and electrical and thermal conductivity, of doped β-boron have been measured from 300 to 1600 K. Most of the useful doping elements are transition metals and occupy interstitial sites in the lattice. The highest figure of merit so far achieved at 1000 K is ZT = 0.11 for P-type, polycrystalline, hot-pressed β-boron doped with copper. Higher values may be achievable once a better P-type dopant is found. Some experiments on B 68 Y, α-B 12 Al, B 4 C, and B 6 Si are described. Transition metals appear to be effective dopants for B 68 Y and B 4 C

Mechanical characterization of hydroxyapatite, thermoelectric materials and doped ceria

Science.gov (United States)

Fan, Xiaofeng

For a variety of applications of brittle ceramic materials, porosity plays a critical role structurally and/or functionally, such as in engineered bone scaffolds, thermoelectric materials and in solid oxide fuel cells. The presence of porosity will affect the mechanical properties, which are essential to the design and application of porous brittle materials. In this study, the mechanical property versus microstructure relations for bioceramics, thermoelectric (TE) materials and solid oxide fuel cells were investigated. For the bioceramic material hydroxyapatite (HA), the Young's modulus was measured using resonant ultrasound spectroscopy (RUS) as a function of (i) porosity and (ii) microcracking damage state. The fracture strength was measured as a function of porosity using biaxial flexure testing, and the distribution of the fracture strength was studied by Weibull analysis. For the natural mineral tetrahedrite based solid solution thermoelectric material (Cu10Zn2As4S13 - Cu 12Sb4S13), the elastic moduli, hardness and fracture toughness were studied as a function of (i) composition and (ii) ball milling time. For ZiNiSn, a thermoelectric half-Heusler compound, the elastic modulus---porosity and hardness---porosity relations were examined. For the solid oxide fuel cell material, gadolina doped ceria (GDC), the elastic moduli including Young's modulus, shear modulus, bulk modulus and Poisson's ratio were measured by RUS as a function of porosity. The hardness was evaluated by Vickers indentation technique as a function of porosity. The results of the mechanical property versus microstructure relations obtained in this study are of great importance for the design and fabrication of reliable components with service life and a safety factor. The Weibull modulus, which is a measure of the scatter in fracture strength, is the gauge of the mechanical reliability. The elastic moduli and Poisson's ratio are needed in analytical or numerical models of the thermal and

Apparatus, System, and Method for On-Chip Thermoelectricity Generation

KAUST Repository

Hussain, Muhammad Mustafa

2012-01-26

An apparatus, system, and method for a thermoelectric generator. In some embodiments, the thermoelectric generator comprises a first thermoelectric region and a second thermoelectric region, where the second thermoelectric region may be coupled to the first thermoelectric region by a first conductor. In some embodiments, a second conductor may be coupled to the first thermoelectric region and a third conductor may be coupled to the second thermoelectric region. In some embodiments, the first conductor may be in a first plane, the first thermoelectric region and the second thermoelectric region may be in a second plane, and the second conductor and the third conductor may be in a third plane.

Apparatus, System, and Method for On-Chip Thermoelectricity Generation

KAUST Repository

Hussain, Muhammad Mustafa; Fahad, Hossain M.; Rojas, Jhonathan Prieto

2012-01-01

An apparatus, system, and method for a thermoelectric generator. In some embodiments, the thermoelectric generator comprises a first thermoelectric region and a second thermoelectric region, where the second thermoelectric region may be coupled to the first thermoelectric region by a first conductor. In some embodiments, a second conductor may be coupled to the first thermoelectric region and a third conductor may be coupled to the second thermoelectric region. In some embodiments, the first conductor may be in a first plane, the first thermoelectric region and the second thermoelectric region may be in a second plane, and the second conductor and the third conductor may be in a third plane.

A thermoelectric voltage effect in polyethylene oxide

International Nuclear Information System (INIS)

Martin, Bjoern; Wagner, Achim; Kliem, Herbert

2003-01-01

The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depends on the energy-barrier heights in the multi-well potential

A thermoelectric voltage effect in polyethylene oxide

CERN Document Server

Martin, B; Kliem, H

2003-01-01

The conductivity of polyethylene oxide (PEO) is described with a three-dimensional hopping model considering electrostatic interactions between the ions. Ions fluctuate over energy-barriers in a multi-well potential. To decide whether positive or negative charges are responsible for this conductivity, the thermoelectric voltage is measured. The samples are embedded between two aluminium-electrodes. The oxide on the interface between the electrodes and the PEO serves as a blocking layer. The temperature of each electrode is controlled by a Peltier element. A temperature step is applied to one electrode by changing the temperature of one of the Peltier elements. Due to this temperature gradient, the mobile charges fluctuate thermally activated from the warmer side to the colder side of the sample. The direction of the measured thermoelectric voltage indicates the type of mobile charges. It is found that positive charges are mobile. Further, it is shown that the absolute value of the thermoelectric voltage depen...

Control of a deareador level of a thermoelectric power station using modern control techniques; Control de nivel de un deareador de una central termoelectrica utilizando tecnicas de control moderno

Energy Technology Data Exchange (ETDEWEB)

Chavez Estrada, Jose Israel

1997-01-01

The present work shows the implementation of the scheme of predictive control IMC (Internal Model Control) in order to control the level of the deareador of a combined cycle thermoelectric power station of (C.C.T.S.). The implementation has the purpose of looking for alternative strategies of control to the classic ones (PID`s) that more efficiently control the variables of interest, in addition to getting into the new control techniques of control. Following the philosophy of predictive control IMC the form to applying this technique is shown, as well as the implementation of this type of controllers. A comparison of predictive control IMC is made with the scheme of conventional control (three control elements PID`s ) used at present to control the level of the deareador in the Combined Cycle Thermoelectric Power stations of Dos Bocas, Veracruz, Mexico and of Gomez Palacio, Durango, Mexico. [Espanol] El presente trabajo muestra la implementacion del esquema de control predictivo IMC (Control con Modelo Interno) con el objeto de controlar el nivel del deareador de una Central Termoelectrica de Ciclo Combinado (C.T.C.C.). La implementacion tiene la finalidad de buscar estrategias de control alternas a las clasicas (PID`s) que controlen mas eficientemente la variable de interes, ademas de incursionar en las nuevas tecnicas de control. Siguiendo la filosofia del control predictivo IMC se muestra la forma de aplicar esta tecnica, asi como la implementacion de este tipo de controladores. Se hace una comparacion del control predictivo IMC con el esquema de control convencional (control de tres elementos PID`s) utilizando actualmente para controlar el nivel del deareador en las centrales termoelectricas de ciclo combinado de Dos Bocas, Veracruz y de Gomez Palacio, Durango en Mexico.

Thermoelectric generators: A review of applications

International Nuclear Information System (INIS)

Champier, Daniel

2017-01-01

Highlights: • This paper reviews the state of the art of thermoelectric generators. • The latest thermoelectric modules are introduced. • Waste heat recovery in transport and industry with thermoelectric generators. • Domestic and industrial applications of thermoelectric generators. • Thermoelectric generators in space, micro-generation and solar conversion. - Abstract: In past centuries, men have mainly looked to increase their production of energy in order to develop their industry, means of transport and quality of life. Since the recent energy crisis, researchers and industrials have looked mainly to manage energy in a better way, especially by increasing energy system efficiency. This context explains the growing interest for thermoelectric generators. Today, thermoelectric generators allow lost thermal energy to be recovered, energy to be produced in extreme environments, electric power to be generated in remote areas and microsensors to be powered. Direct solar thermal energy can also be used to produce electricity. This review begins with the basic principles of thermoelectricity and a presentation of existing and future materials. Design and optimization of generators are addressed. Finally in this paper, we developed an exhaustive presentation of thermoelectric generation applications covering electricity generation in extreme environments, waste heat recovery in transport and industry, domestic production in developing and developed countries, micro-generation for sensors and microelectronics and solar thermoelectric generators. Many recent applications are presented, as well as the future applications which are currently being studied in research laboratories or in industry. The main purpose of this paper is to clearly demonstrate that, almost anywhere in industry or in domestic uses, it is worth checking whether a TEG can be added whenever heat is moving from a hot source to a cold source.

Bottom-up processing of thermoelectric nanocomposites from colloidal nanocrystal building blocks: the case of Ag2Te–PbTe

International Nuclear Information System (INIS)

Cadavid, Doris; Ibáñez, Maria; Gorsse, Stéphane; López, Antonio M.; Cirera, Albert; Morante, Joan Ramon; Cabot, Andreu

2012-01-01

Nanocomposites are highly promising materials to enhance the efficiency of current thermoelectric devices. A straightforward and at the same time highly versatile and controllable approach to produce nanocomposites is the assembly of solution-processed nanocrystal building blocks. The convenience of this bottom-up approach to produce nanocomposites with homogeneous phase distributions and adjustable composition is demonstrated here by blending Ag 2 Te and PbTe colloidal nanocrystals to form Ag 2 Te–PbTe bulk nanocomposites. The thermoelectric properties of these nanocomposites are analyzed in the temperature range from 300 to 700 K. The evolution of their electrical conductivity and Seebeck coefficient is discussed in terms of the blend composition and the characteristics of the constituent materials.

Thermoelectric performance enhancement of SrTiO3 by Pr doping

KAUST Repository

Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

2014-01-01

We investigate Pr doping at the Sr site as a possible route to enhance the thermoelectric behavior of SrTiO3-based materials, using first principles calculations in full-potential density functional theory. The effects of the Pr dopant on the local electronic structure and resulting transport properties are compared to common Nb doping. We demonstrate a substantial enhancement of the thermoelectric figure of merit and develop an explanation for the positive effects, which opens new ways for materials optimization by substitutional doping at the perovskite B site. © 2014 the Partner Organisations.

Thermoelectric properties, crystal and electronic structure of semiconducting RECuSe{sub 2} (RE = Pr, Sm, Gd, Dy and Er)

Energy Technology Data Exchange (ETDEWEB)

Esmaeili, Mehdi [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada); Tseng, Yu-Chih [CANMET Materials, Natural Resources Canada, 183 Longwood Road South, Hamilton, Ontario L8P 0A5 (Canada); Mozharivskyj, Yurij, E-mail: mozhar@mcmaster.ca [Department of Chemistry and Chemical Biology, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4M1 (Canada)

2014-10-15

Highlights: • Crystal and electronic structure of monoclinic and trigonal RECuSe{sub 2} phases. • Thermoelectric properties of the RECuSe{sub 2} phases. • Temperature stability of the RECuSe{sub 2} phases. - Abstract: The ternary RECuSe{sub 2} phases have been prepared and structurally characterized. They adopt either a monoclinic structure (P2{sub 1}/c, z = 4) for lighter rare earths (RE = Pr, Sm and Gd) or Cu-disordered trigonal structure for heavier rare-earths (P3{sup ¯}m1, z = 1, RE = Dy and Er). The resistivity and Seebeck coefficient measurements on GdCuSe{sub 2}, DyCuSe{sub 2} and ErCuSe{sub 2} indicate that the studied phases are p-type semiconductors with relatively small activation energies (0.045–0.11 eV). However, their electrical resistivities are too high (0.45–220 Ω cm at room temperature) to make them competitive thermoelectric materials. Electronic structure calculations indicate presence of a band gap in the RECuSe{sub 2} phases.

Analysis of a Temperature-Controlled Exhaust Thermoelectric Generator During a Driving Cycle

Science.gov (United States)

Brito, F. P.; Alves, A.; Pires, J. M.; Martins, L. B.; Martins, J.; Oliveira, J.; Teixeira, J.; Goncalves, L. M.; Hall, M. J.

2016-03-01

Thermoelectric generators can be used in automotive exhaust energy recovery. As car engines operate under wide variable loads, it is a challenge to design a system for operating efficiently under these variable conditions. This means being able to avoid excessive thermal dilution under low engine loads and being able to operate under high load, high temperature events without the need to deflect the exhaust gases with bypass systems. The authors have previously proposed a thermoelectric generator (TEG) concept with temperature control based on the operating principle of the variable conductance heat pipe/thermosiphon. This strategy allows the TEG modules’ hot face to work under constant, optimized temperature. The variable engine load will only affect the number of modules exposed to the heat source, not the heat transfer temperature. This prevents module overheating under high engine loads and avoids thermal dilution under low engine loads. The present work assesses the merit of the aforementioned approach by analysing the generator output during driving cycles simulated with an energy model of a light vehicle. For the baseline evaporator and condenser configuration, the driving cycle averaged electrical power outputs were approximately 320 W and 550 W for the type-approval Worldwide harmonized light vehicles test procedure Class 3 driving cycle and for a real-world highway driving cycle, respectively.

Experimental study of a thermoelectrically-driven liquid chiller in terms of COP and cooling down period

International Nuclear Information System (INIS)

Faraji, Amir Yadollah; Goldsmid, H.J.; Akbarzadeh, Aliakbar

2014-01-01

Highlights: • A COP of 0.8 is achievable for a thermoelectrically-driven water chiller. • With two market available TEC modules with ZT around 0.7 sub-zero temperatures became applicable. • Forced air convection heat exchangers have better COP and CDP compared with natural convection. • A PID controller has several advantages against on–off controller for controlling TEC module. - Abstract: To study COP and other cooling parameters of a thermoelectically-driven liquid chiller, a 430 ml capacity liquid chiller incorporating two commercially available thermoelectric modules as its active components, has been designed, built and assessed. The system can use natural or forced air convection in heat exchangers attached to the thermoelectric module surfaces. The coefficient of performance (COP) and cooling down period (CDP) of the system for different thermoelectric input voltages have been measured. The COP of the thermoelectric chiller was found to be in the range 0.2–1.4 for forced convection and 0.2–1 for natural convection at a cooled liquid temperature of 10 °C and an ambient temperature of 18 °C. For the chiller, heat pumping capacity, minimum achievable water temperature, and temperature difference across the thermoelectric surfaces were investigated for input voltages of 3 V, 5 V, 7 V, 10 V and 12 V. Furthermore, as a basis for reliable and convenient control of the chiller, a proportional integral derivative (PID) controller has been proposed

Nanostructured Bulk Thermoelectric Generator for Efficient Power Harvesting for Self-powered Sensor Networks

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yanliang [Idaho National Lab. (INL), Idaho Falls, ID (United States); Butt, Darryl [Idaho National Lab. (INL), Idaho Falls, ID (United States); Agarwal, Vivek [Idaho National Lab. (INL), Idaho Falls, ID (United States)

2015-07-01

The objective of this Nuclear Energy Enabling Technology research project is to develop high-efficiency and reliable thermoelectric generators for self-powered wireless sensors nodes utilizing thermal energy from nuclear plant or fuel cycle. The power harvesting technology has crosscutting significance to address critical technology gaps in monitoring nuclear plants and fuel cycle. The outcomes of the project will lead to significant advancement in sensors and instrumentation technology, reducing cost, improving monitoring reliability and therefore enhancing safety. The self-powered wireless sensor networks could support the long-term safe and economical operation of all the reactor designs and fuel cycle concepts, as well as spent fuel storage and many other nuclear science and engineering applications. The research is based on recent breakthroughs in high-performance nanostructured bulk (nanobulk) thermoelectric materials that enable high-efficiency direct heat-to-electricity conversion over a wide temperature range. The nanobulk thermoelectric materials that the research team at Boise State University and University of Houston has developed yield up to a 50% increase in the thermoelectric figure of merit, ZT, compared with state-of-the-art bulk counterparts. This report focuses on the selection of optimal thermoelectric materials for this project. The team has performed extensive study on two thermoelectric materials systems, i.e. the half-Heusler materials, and the Bismuth-Telluride materials. The report contains our recent research results on the fabrication, characterization and thermoelectric property measurements of these two materials.

Thermoelectrics and its energy harvesting

National Research Council Canada - National Science Library

Rowe, David Michael

2012-01-01

.... It details the latest techniques for the preparation of thermoelectric materials employed in energy harvesting, together with advances in the thermoelectric characterisation of nanoscale material...

Electronic cooling using thermoelectric devices

Energy Technology Data Exchange (ETDEWEB)

Zebarjadi, M., E-mail: m.zebarjadi@rutgers.edu [Department of Mechanical and Aerospace Engineering, Rutgers University, Piscataway, New Jersey 08854 (United States); Institute of Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)

2015-05-18

Thermoelectric coolers or Peltier coolers are used to pump heat in the opposite direction of the natural heat flux. These coolers have also been proposed for electronic cooling, wherein the aim is to pump heat in the natural heat flux direction and from hot spots to the colder ambient temperature. In this manuscript, we show that for such applications, one needs to use thermoelectric materials with large thermal conductivity and large power factor, instead of the traditionally used high ZT thermoelectric materials. We further show that with the known thermoelectric materials, the active cooling cannot compete with passive cooling, and one needs to explore a new set of materials to provide a cooling solution better than a regular copper heat sink. We propose a set of materials and directions for exploring possible materials candidates suitable for electronic cooling. Finally, to achieve maximum cooling, we propose to use thermoelectric elements as fins attached to copper blocks.

Compressive strain induced enhancement in thermoelectric-power-factor in monolayer MoS2 nanosheet

International Nuclear Information System (INIS)

Dimple; Jena, Nityasagar; De Sarkar, Abir

2017-01-01

Strain and temperature induced tunability in the thermoelectric properties in monolayer MoS 2 (ML-MoS 2 ) has been demonstrated using density functional theory coupled to semi-classical Boltzmann transport theory. Compressive strain, in general and uniaxial compressive strain (along the zig-zag direction), in particular, is found to be most effective in enhancing the thermoelectric power factor, owing to the higher electronic mobility and its sensitivity to lattice compression along this direction. Variation in the Seebeck coefficient and electronic band gap with strain is found to follow the Goldsmid–Sharp relation. n-type doping is found to raise the relaxation time-scaled thermoelectric power factor higher than p-type doping and this divide widens with increasing temperature. The relaxation time-scaled thermoelectric power factor in optimally n-doped ML-MoS 2 is found to undergo maximal enhancement under the application of 3% uniaxial compressive strain along the zig-zag direction, when both the ( direct ) electronic band gap and the Seebeck coefficient reach their maximum, while the electron mobility drops down drastically from 73.08 to 44.15 cm 2 V −1 s −1 . Such strain sensitive thermoelectric responses in ML-MoS 2 could open doorways for a variety of applications in emerging areas in 2D-thermoelectrics, such as on-chip thermoelectric power generation and waste thermal energy harvesting. (paper)

From phase-change materials to thermoelectrics?

Energy Technology Data Exchange (ETDEWEB)

Schneider, Matthias N.; Rosenthal, Tobias; Oeckler, Oliver [Dept. of Chemistry, Ludwig Maximilian Univ. Munich (Germany); Stiewe, Christian [German Aerospace Center, Cologne (Germany)

2010-07-01

Metastable tellurides play an important role as phase-change materials in data storage media and non-volatile RAM devices. The corresponding crystalline phases with very simple basic structures are not stable as bulk materials at ambient conditions, however, for a broad range of compositions they represent stable high-temperature phases. In the system Ge/Sb/Te, rocksalt-type high-temperature phases are characterized by a large number of vacancies randomly distributed over the cation position, which order as 2D vacancy layers upon cooling. Short-range order in quenched samples produces pronounced nanostructures by the formation of twin domains and finite intersecting vacancy layers. As phase-change materials are usually semimetals or small-bandgap semiconductors and efficient data storage requires low thermal conductivity, bulk materials with similar compositions and properties can be expected to exhibit promising thermoelectric characteristics. Nanostructuring by phase transitions that involve partial vacancy ordering may enhance the efficiency of such thermoelectrics. We have shown that germanium antimony tellurides with compositions close to those used as phase-change materials in rewritable Blu-Ray Discs, e.g. (GeTe){sub 12}Sb{sub 2}Te{sub 3}, exhibit thermoelectric figures of merit of up to ZT = 1.3 at 450 C if a nanodomain structure is induced by rapidly quenching the cubic high-temperature phase. Structural changes have been elucidated by X-ray diffraction and high-resolution electron microscopy. (orig.)

Thermoelectric property of fine-grained CoSb3 skutterudite compound fabricated by mechanical alloying and spark plasma sintering

International Nuclear Information System (INIS)

Liu Weishu; Zhang Boping; Li Jingfeng; Zhao Lidong

2007-01-01

Skutterudite CoSb 3 polycrystalline materials were prepared using a combined process of mechanical alloying (MA) and spark plasma sintering (SPS). The influence of SPS temperature on the thermoelectric properties was focused in this work with a special emphasis on the analysis of the size effects of grains. The average grain sizes decreased from 300 to 50 nm with decreasing SPS temperatures from 600 to 300 deg. C. The electrical resistivities of samples spark plasma sintered at 300-600 deg. C all decreased with increasing temperature, indicating a classic intrinsic conduction behaviour of semiconductors. The samples spark plasma sintered at 300-500 deg. C showed a positive Seebeck coefficient while the sample spark plasma sintered at 600 deg. C showed a negative Seebeck coefficient. The room-temperature thermal conductivities were reduced from 4.30 to 2.92 W m -1 K -1 as the grain sizes were decreased from 300 to 100 nm corresponding to SPS at 600 and 400 deg. C, respectively. The present work indicates that MA and SPS is a good combination for fabricating fine-grained CoSb 3 thermoelectric materials

PV-hybrid and thermoelectric collectors

Energy Technology Data Exchange (ETDEWEB)

Rockendorf, G.; Sillmann, R. [Institut fuer Solarenergieforschung GmbH, Emmerthal (Germany); Podlowski, L.; Litzenburger, B. [SolarWerk GmbH, Teltow (Germany)

1999-07-01

Two different principles of thermoelectric cogeneration solar collectors have been realized and investigated. Concerning the first principle, the thermoelectric collector (TEC) delivers electricity indirectly by first producing heat and subsequently generating electricity by means of a thermoelectric generator. Concerning the second principle, the photovoltaic-hybrid collector (PVHC) uses photovoltaic cells, which are cooled by a liquid heat-transfer medium. The characteristics of both collector types are described. Simulation modules have been developed and implemented in TRNSYS 14.1 (1994), in order to simulate their behaviour in typical domestic hot-water systems. The discussion of the results shows that the electric output of the PV-hybrid collector is significantly higher than that of the thermoelectric collector. (author)

Examination of applicability of thermoelectric power measurement for thermal aging evaluation of cast duplex stainless steel to real components in nuclear power plants

International Nuclear Information System (INIS)

Joubouji, Katsuo

2006-01-01

It is known the mechanical properties of cast duplex stainless steel, which is used for main coolant pipes of pressurized water reactor type nuclear power plants, change due to thermal aging. Non-destructive evaluation method for thermal aging using thermoelectric power measurement has been studied in INSS. And it has been found that there was some relation between mechanical properties and thermoelectric power in the case of accelerated aging sample and change in thermoelectric power was caused by change in microstructure due to thermal aging. In this study, n-site measurement of thermoelectric power of a main coolant pipe with the measurement device which has been used in a laboratory was carried out. As a result, thermoelectric power of the main coolant pipe was almost measured within the range from -2.2 to -2μ V/degC, and that was corresponding to the relation of accelerated aging samples between thermoelectric power and the product of ferrite content and aging parameter considering the standard error. Moreover, applying the measured thermoelectric power to the relation of accelerated aging samples between thermoelectric power and impact value, change in the impact value of the pipe seemed to be corresponding to about 40% of the maximum change assumed by thermal aging. (author)

Thermoelectric transport and Peltier cooling of cold atomic gases

Science.gov (United States)

Grenier, Charles; Kollath, Corinna; Georges, Antoine

2016-12-01

This brief review presents the emerging field of mesoscopic physics with cold atoms, with an emphasis on thermal and 'thermoelectric' transport, i.e. coupled transport of particles and entropy. We review in particular the comparison between theoretically predicted and experimentally observed thermoelectric effects in such systems. We also show how combining well-designed transport properties and evaporative cooling leads to an equivalent of the Peltier effect with cold atoms, which can be used as a new cooling procedure with improved cooling power and efficiency compared to the evaporative cooling currently used in atomic gases. This could lead to a new generation of experiments probing strong correlation effects of ultracold fermionic atoms at low temperatures.

Bottom-up processing of thermoelectric nanocomposites from colloidal nanocrystal building blocks: the case of Ag{sub 2}Te-PbTe

Energy Technology Data Exchange (ETDEWEB)

Cadavid, Doris [Catalonia Institute for Energy Research, IREC (Spain); Ibanez, Maria [Universitat de Barcelona, Departament d' Electronica (Spain); Gorsse, Stephane [Universite de Bordeaux, ICMCB, CNRS (France); Lopez, Antonio M. [Universitat Politecnica de Catalunya, Departament d' Enginyeria Electronica (Spain); Cirera, Albert [Universitat de Barcelona, Departament d' Electronica (Spain); Morante, Joan Ramon; Cabot, Andreu, E-mail: acabot@irec.cat [Catalonia Institute for Energy Research, IREC (Spain)

2012-12-15

Nanocomposites are highly promising materials to enhance the efficiency of current thermoelectric devices. A straightforward and at the same time highly versatile and controllable approach to produce nanocomposites is the assembly of solution-processed nanocrystal building blocks. The convenience of this bottom-up approach to produce nanocomposites with homogeneous phase distributions and adjustable composition is demonstrated here by blending Ag{sub 2}Te and PbTe colloidal nanocrystals to form Ag{sub 2}Te-PbTe bulk nanocomposites. The thermoelectric properties of these nanocomposites are analyzed in the temperature range from 300 to 700 K. The evolution of their electrical conductivity and Seebeck coefficient is discussed in terms of the blend composition and the characteristics of the constituent materials.

Thermoelectric Exhaust Heat Recovery with Heat Pipe-Based Thermal Control

Science.gov (United States)

Brito, F. P.; Martins, Jorge; Hançer, Esra; Antunes, Nuno; Gonçalves, L. M.

2015-06-01

Heat pipe (HP)-based heat exchangers can be used for very low resistance heat transfer between a hot and a cold source. Their operating temperature depends solely on the boiling point of their working fluid, so it is possible to control the heat transfer temperature if the pressure of the HP can be adjusted. This is the case of the variable conductance HPs (VCHP). This solution makes VCHPs ideal for the passive control of thermoelectric generator (TEG) temperature levels. The present work assesses, both theoretically and experimentally, the merit of the aforementioned approach. A thermal and electrical model of a TEG with VCHP assist is proposed. Experimental results obtained with a proof of concept prototype attached to a small single-cylinder engine are presented and used to validate the model. It was found that the HP heat exchanger indeed enables the TEG to operate at a constant, optimal temperature in a passive and safe way, and with a minimal overall thermal resistance, under part load, it effectively reduces the active module area without deprecating the temperature level of the active modules.

Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

Energy Technology Data Exchange (ETDEWEB)

Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Schmitz, Andreas [Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany); Hartung, David; Klar, Peter J. [Institute of Experimental Physics I, Justus-Liebig-University, Heinrich-Buff-Ring 16, D-35392 Giessen (Germany); Dankwort, Torben; Kienle, Lorenz [Institute for Material Science, Christian-Albrechts-University, Kaiserstrasse 2, D-24143 Kiel (Germany); Mueller, Eckhard, E-mail: Eckhard.Mueller@dlr.de [Institute for Inorganic and Analytical Chemistry, Justus-Liebig-University, Heinrich-Buff-Ring 17, D-35392 Giessen (Germany); Institute of Materials Research, German Aerospace Center (DLR), D-51170 Cologne (Germany)

2016-06-07

We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Room temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.

Microwatt thermoelectric generator

International Nuclear Information System (INIS)

Goslee, D.E.

1976-01-01

A microwatt thermoelectric generator suitable for implanting in the body is described. The disclosed generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile

Microwatt thermoelectric generator

International Nuclear Information System (INIS)

Goslee, D.E.; Bustard, T.S.

1976-01-01

A microwatt thermoelectric generator suitable for implanting in the body is described. The generator utilizes a nuclear energy source. Provision is made for temporary electrical connection to the generator for testing purposes, and for ensuring that the heat generated by the nuclear source does not bypass the pile. Also disclosed is a getter which is resistant to shrinkage during sintering, and a foil configuration for controlling the radiation of heat from the nuclear source to the hot plate of the pile

Optimal Design of an Automotive Exhaust Thermoelectric Generator

Science.gov (United States)

Fagehi, Hassan; Attar, Alaa; Lee, Hosung

2018-07-01

The consumption of energy continues to increase at an exponential rate, especially in terms of conventional automobiles. Approximately 40% of the applied fuel into a vehicle is lost as waste exhausted to the environment. The desire for improved fuel efficiency by recovering the exhaust waste heat in automobiles has become an important subject. A thermoelectric generator (TEG) has the potential to convert exhaust waste heat into electricity as long as it is improving fuel economy. The remarkable amount of research being conducted on TEGs indicates that this technology will have a bright future in terms of power generation. The current study discusses the optimal design of the automotive exhaust TEG. An experimental study has been conducted to verify the model that used the ideal (standard) equations along with effective material properties. The model is reasonably verified by experimental work, mainly due to the utilization of the effective material properties. Hence, the thermoelectric module that was used in the experiment was optimized by using a developed optimal design theory (dimensionless analysis technique).

Optimal Design of an Automotive Exhaust Thermoelectric Generator

Science.gov (United States)

Fagehi, Hassan; Attar, Alaa; Lee, Hosung

2018-04-01

The consumption of energy continues to increase at an exponential rate, especially in terms of conventional automobiles. Approximately 40% of the applied fuel into a vehicle is lost as waste exhausted to the environment. The desire for improved fuel efficiency by recovering the exhaust waste heat in automobiles has become an important subject. A thermoelectric generator (TEG) has the potential to convert exhaust waste heat into electricity as long as it is improving fuel economy. The remarkable amount of research being conducted on TEGs indicates that this technology will have a bright future in terms of power generation. The current study discusses the optimal design of the automotive exhaust TEG. An experimental study has been conducted to verify the model that used the ideal (standard) equations along with effective material properties. The model is reasonably verified by experimental work, mainly due to the utilization of the effective material properties. Hence, the thermoelectric module that was used in the experiment was optimized by using a developed optimal design theory (dimensionless analysis technique).

Potential thermoelectric material open framework Si24 from a first-principles study

International Nuclear Information System (INIS)

Ouyang, Tao; Zhang, Pei; Xiao, Huaping; Tang, Chao; Li, Jin; He, Chaoyu; Zhong, Jianxin

2017-01-01

Open framework Si 24 is a new synthesis cage-like silicon allotrope with a quasi-direct bandgap and predicted to exhibit outstanding adsorption efficiency, foreshowing the potential applications in the photovoltaic community. In this paper, the thermoelectric property of such new Si structures is investigated by combining first-principles calculation and semiclassical Boltzmann transport theory. The calculations show that the Si 24 possesses a superb Seebeck coefficient, and obviously anisotropic electronic conductivity. Owing to more energy extremums existing in the conduction band region, the power factor of Si 24 in the n-type doping is always better than that in p-type samples. Anisotropic phonon transport property is observed as well in Si 24 with average lattice thermal conductivity of 45.35 W m −1 K −1 at room temperature. Based on the electron relaxation time estimated from the experiment, the thermoelectric figure of merit of Si 24 is found to be as high as 0.69 (n-type doping at 700 K) and 0.51 (p-type doping at 700 K) along the xx crystal direction, which is about two orders of magnitude larger than that of diamond Si ( d -Si). The findings presented in this work shed light on the thermoelectric performance of Si 24 and qualify that such new Si allotrope is a promising platform for achieving the recombination of photovoltaic and thermoelectric technologies together. (paper)

Evaluation of high step-up power electronics stages in thermoelectric generator systems

DEFF Research Database (Denmark)

Sun, Kai; Ni, Longxian; Chen, Min

2013-01-01

To develop practical thermoelectric generator (TEG) systems, especially radioisotope thermoelectric power supplies for deep-space exploration, a power conditioning stage with high step-up gain is indispensable. This stage is used to step up the low output voltage of thermoelectric generators...... to the required high level. Furthermore, maximum power point tracking control for TEG modules needs to be implemented into the power electronics stages. In this paper, the temperature-dependent electrical characteristics of a thermoelectric generator are analyzed in depth. Three typical high step-up power...... converters suitable for TEG applications are discussed: an interleaved boost converter, a boost converter with a coupled inductor and an interleaved boost converter with an auxiliary transformer. A general comparison of the three high step-up converters is conducted to study the step-up gain, conversion...

Measurement of the thermoelectric properties of quasicrystalline AlPdRe and AlCuFe alloys

Energy Technology Data Exchange (ETDEWEB)

Wilson, M L; LeGault, S; Stroud, R M; Tritt, T M

1997-07-01

The authors report the measurement of the thermal conductivity, electrical resistivity, and thermoelectric power on two quasicrystalline compounds, Al{sub 70}Pd{sub 20}Re{sub 10} and Al{sub 62.5}Cu{sub 25}Fe{sub 12.5}. These materials are found to possess a thermal conductivity of order 1 W/m{center{underscore}dot}K, while retaining their semimetallic conductivity. These features coupled with moderately large thermopowers, up to 55 {micro}V/K, imply that the general class of quasicrystalline compounds warrants careful investigation for their potential as new thermoelectric materials.

TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn superlattices for thermoelectrics

Energy Technology Data Exchange (ETDEWEB)

Jaeger, Tino; Jakob, Gerhard [Institut fuer Physik, Universitaet Mainz, 55099 Mainz (Germany); Schwall, Michael; Kozina, Xeniya; Balke, Benjamin; Felser, Claudia [Institut fuer Analytische und Anorganische Chemie, Universitaet Mainz, 55099 Mainz (Germany); Populoh, Sascha; Weidenkaff, Anke [EMPA, Ueberlandstrasse 129, 8600 Duebendorf (Switzerland)

2012-07-01

In order to increase the attractiveness of thermoelectric devices, their efficiency must be increased. Beside others, the properties of the thermoelectric material can be improved. That can be achieved by either increasing Seebeck coefficient or conductivity or by a depressed thermal conductivity along the thermal gradient. For thin films, superlattices or multilayers can be used to lower the cross plane thermal conductivity. As a bottom up approach, artificially layered films with a periodicity of about 5-6 nm are assumed to generate the most phonon scattering at the interfaces. If electrical properties remain unchanged or less effected, the thermoelectric efficiency is enhanced. Semiconducting Half-Heuslers are well studied thermoelectric bulk materials. Among others, TiNiSn and Zr{sub 0.5}Hf{sub 0.5}NiSn are potential candidates. Essentially, their similar lattice constants enable epitaxial layers on top of each other. Furthermore, varied atomic masses of Ti, Zr and Hf generate the aspired alternating mass distribution. By rotating the substrate in between simultaneously burning cathodes, significant film thicknesses can be achieved by sputter deposition.

Investigation of doped Perovskite systems RAIO3 using density functional theory based electronic structure and thermoelectric studies

International Nuclear Information System (INIS)

Sandeep; Ghimire, M. P.; Thapa, R. K.; Rai, D. P.; Shankar, A

2016-01-01

Samarium doping effects on the thermoelectric properties in Eu 1-x Sm x AlO 3 (x=0%, 50%, and 100%) were studied using first principles calculations based thermal transport property measurement. The result indicate that the compound is an intrinsic n-type material. Samarium doping has a positive effect on the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 system, with sharp increase in figure of merit (ZT) observed when x=0, 50 and 100% up to 150K. Compared to x=0 and 100%, the case of x=50% was found to have more positive increment in ZT value suggesting that the doing to have positive effect on figure of merit in Eu 1-x Sm x AlO 3 . Furthermore, all the samples show stable thermoelectric compatibility factors over a broad temperature range from 700 to 1000 K, which could have great benefits for their practical applications. It is concluded that the overall thermoelectric performance of the Eu 1-x Sm x AlO 3 could be highly enhanced using doping techniques. (paper)