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Sample records for thermionically enhanced sputtering

  1. Near-field enhanced thermionic energy conversion for renewable energy recycling

    Science.gov (United States)

    Ghashami, Mohammad; Cho, Sung Kwon; Park, Keunhan

    2017-09-01

    This article proposes a new energy harvesting concept that greatly enhances thermionic power generation with high efficiency by exploiting the near-field enhancement of thermal radiation. The proposed near-field enhanced thermionic energy conversion (NETEC) system is uniquely configured with a low-bandgap semiconductor cathode separated from a thermal emitter with a subwavelength gap distance, such that a significant amount of electrons can be photoexcited by near-field thermal radiation to contribute to the enhancement of thermionic current density. We theoretically demonstrate that the NETEC system can generate electric power at a significantly lower temperature than the standard thermionic generator, and the energy conversion efficiency can exceed 40%. The obtained results reveal that near-field photoexcitation can enhance the thermionic power output by more than 10 times, making this hybrid system attractive for renewable energy recycling.

  2. Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

    Directory of Open Access Journals (Sweden)

    Alex Croot

    2017-11-01

    Full Text Available Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

  3. Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

    Science.gov (United States)

    Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

    1999-01-01

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

  4. Thermodynamics of photon-enhanced thermionic emission solar cells

    International Nuclear Information System (INIS)

    Reck, Kasper; Hansen, Ole

    2014-01-01

    Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE solar cells including an analysis of the entropy production due to thermionic emission of general validity. The model is applied to find the maximum efficiency of a PETE cell for given cathode and anode work functions and temperatures

  5. Thermodynamics of photon-enhanced thermionic emission solar cells

    DEFF Research Database (Denmark)

    Reck, Kasper; Hansen, Ole

    2014-01-01

    Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE...

  6. Photon enhanced thermionic emission

    Science.gov (United States)

    Schwede, Jared; Melosh, Nicholas; Shen, Zhixun

    2014-10-07

    Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200.degree. C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.

  7. Cesium-plasma-conductivity enhancement in the advanced thermionic energy converter. Final report

    International Nuclear Information System (INIS)

    Manikopoulos, C.N.

    Two methods of plasma conductivity enhancement in a cesium vapor thermionic energy converter have been studied. The first involved resonance photoabsorption of several cesium lines and the second utilized cesium plasma sustenance by application of microwave power. An extensive study of ionization processes in a cesium discharge in the presence of resonance ionization was made. Calculations were made of expected percentage excitation levels for several cesium resonance transitions for different values of neutral density and temperature as well as incident radiation power levels. The results of some of these computations were tabulated. Several ionization schemes were considered. A number of cesium transitions were investigated in the range of 799 to 870 nanometers for four different cesium reservoir temperatures, 467, 511, 550 and 591 K. The related absorption coefficients of the radiation lines in the plasma were deduced and tabulated. The resulting plasma conductivity increase was recorded and the associated ionization enhancement was deduced. A microwave cavity was built where the emitter and collector of a simple thermionic converter made up two of the cavity walls and resonant microwave power was externally applied. The I-V characteristics of the thermionic converter were studied under several microwave power levels in the range of 0 to 2 watts. Significant shifts to higher currents were observed as the microwave power levels were raised. In conclusion, both methods show promise as auxiliary ionization mechanisms for the thermionic energy converter, especially at low emitter temperatures

  8. Photophysics of fullerenes: Thermionic emission

    International Nuclear Information System (INIS)

    Compton, R.N.; Tuinman, A.A.; Huang, J.

    1996-01-01

    Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C 60 excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs + is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C 60 in the energy range from 8 to 12 eV results in C 60 anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements

  9. Photophysics of fullerenes: Thermionic emission

    Energy Technology Data Exchange (ETDEWEB)

    Compton, R.N. [Univ. of Tennessee, Knoxville, TN (United States)]|[Oak Ridge National Lab., TN (United States); Tuinman, A.A. [Univ. of Tennessee, Knoxville, TN (United States); Huang, J. [Ames Lab., IA (United States)

    1996-09-01

    Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C{sub 60} excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs{sup +} is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C{sub 60} in the energy range from 8 to 12 eV results in C{sub 60} anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements.

  10. THERMIONIC EMISSION ENHANCEMENT FROM CESIUM COATED RHENIUM IN ELECTRIC FIELDS

    Energy Technology Data Exchange (ETDEWEB)

    de Steese, J. G.; Zollweg, R. J.

    1963-04-15

    The plasma-anode technique was used to observe anomalously high thermionic emission from a rhenium surface with small cesium coverage, where the work function of the composite surface is greater than the ionization potential of cesium. Data suggest that emission enhancement is caused by increased cesium coverage because of cesiumion trapping near the emitter surface under the influence of an ion-rich sheath. (auth)

  11. Research and Development of a New Field Enhanced Low Temperature Thermionic Cathode that Enables Fluorescent Dimming and Loan Shedding without Auxiliary Cathode Heating

    Energy Technology Data Exchange (ETDEWEB)

    Feng Jin

    2009-01-07

    This is the final report for project entitled 'Research and development of a new field enhanced low temperature thermionic cathode that enables fluorescent dimming and load shedding without auxiliary cathode heating', under Agreement Number: DE-FC26-04NT-42329. Under this project, a highly efficient CNT based thermionic cathode was demonstrated. This cathode is capable of emitting electron at a current density two order of magnitude stronger then a typical fluorescent cathode at same temperatures, or capable of emitting at same current density but at temperature about 300 C lower than that of a fluorescent cathode. Detailed fabrication techniques were developed including CVD growth of CNTs and sputter deposition of oxide thin films on CNTs. These are mature technologies that have been widely used in industry for large scale materials processing and device fabrications, thus, with further development work, the techniques developed in this project can be scaled-up in manufacturing environment. The prototype cathodes developed in this project were tested in lighting plasma discharge environment. In many cases, they not only lit and sustain the plasma, but also out perform the fluorescent cathodes in key parameters such like cathode fall voltages. More work will be needed to further evaluate more detailed and longer term performance of the prototype cathode in lighting plasma.

  12. Thermionic and Photo-excited Electron Emission for Energy Conversion Processes

    Directory of Open Access Journals (Sweden)

    Patrick T. McCarthy

    2014-12-01

    Full Text Available This article describes advances in thermionic and photoemission materials and applications dating back to the work on thermionic emission by Guthrie in 1873 and the photoelectric effect by Hertz in 1887. Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photoemission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk and surface structure.

  13. Thermionic and Photo-Excited Electron Emission for Energy-Conversion Processes

    Energy Technology Data Exchange (ETDEWEB)

    McCarthy, Patrick T. [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States); Reifenberger, Ronald G. [Birck Nanotechnology Center, School of Physics, Purdue University, West Lafayette, IN (United States); Fisher, Timothy S., E-mail: tsfisher@purdue.edu [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States)

    2014-12-09

    This article describes advances in thermionic and photo-emission materials and applications dating back to the work on thermionic emission by Guthrie (1873) and the photoelectric effect by Hertz (1893). Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron-emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photo-emission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk, and surface structure.

  14. Negative space charge effects in photon-enhanced thermionic emission solar converters

    International Nuclear Information System (INIS)

    Segev, G.; Weisman, D.; Rosenwaks, Y.; Kribus, A.

    2015-01-01

    In thermionic energy converters, electrons in the gap between electrodes form a negative space charge and inhibit the emission of additional electrons, causing a significant reduction in conversion efficiency. However, in Photon Enhanced Thermionic Emission (PETE) solar energy converters, electrons that are reflected by the electric field in the gap return to the cathode with energy above the conduction band minimum. These electrons first occupy the conduction band from which they can be reemitted. This form of electron recycling makes PETE converters less susceptible to negative space charge loss. While the negative space charge effect was studied extensively in thermionic converters, modeling its effect in PETE converters does not account for important issues such as this form of electron recycling, nor the cathode thermal energy balance. Here, we investigate the space charge effect in PETE solar converters accounting for electron recycling, with full coupling of the cathode and gap models, and addressing conservation of both electric and thermal energy. The analysis shows that the negative space charge loss is lower than previously reported, allowing somewhat larger gaps compared to previous predictions. For a converter with a specific gap, there is an optimal solar flux concentration. The optimal solar flux concentration, the cathode temperature, and the efficiency all increase with smaller gaps. For example, for a gap of 3 μm the maximum efficiency is 38% and the optimal flux concentration is 628, while for a gap of 5 μm the maximum efficiency is 31% and optimal flux concentration is 163

  15. The advanced thermionics initiative...program update

    International Nuclear Information System (INIS)

    Lamp, T.R.; Donovan, B.D.

    1993-01-01

    The United States Air Force has had a long standing interest in thermionic space power dating back to the early 1960s when a heat pipe cooled thermionic converter was demonstrated through work at the predecessor to Wright Laboratory (WL). With the exception of the short hiatus in the mid-70s, Air Force thermionics work at Wright Laboratory has continued to the present time with thermionic technology programs including the burst power thermionic phase change concepts, heat pipe cooled planar diodes, and advanced in-core concept developments such as composite materials, insulators and oxygenation. The Advanced Thermionics Initiative (ATI) program was organized to integrate thermionic technology advances into a converter suitable for in-core reactor applications in the 10 to 40 kWe power range. As an advanced thermionics technology program, the charter and philosophy of the ATI program is to provide the needed advanced converter concepts in support of national thermionic space power programs

  16. Deposition and characterization of sputtered hexaboride coatings

    International Nuclear Information System (INIS)

    Waldhauser, W.

    1996-06-01

    Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  17. Hybrid thermionic-photovoltaic converter

    Energy Technology Data Exchange (ETDEWEB)

    Datas, A. [Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid (Spain)

    2016-04-04

    A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligible electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.

  18. High-efficiency AlxGa1-xAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters

    Science.gov (United States)

    Feng, Cheng; Zhang, Yijun; Qian, Yunsheng; Wang, Ziheng; Liu, Jian; Chang, Benkang; Shi, Feng; Jiao, Gangcheng

    2018-04-01

    A theoretical emission model for AlxGa1-xAs/GaAs cathode with complex structure based on photon-enhanced thermionic emission is developed by utilizing one-dimensional steady-state continuity equations. The cathode structure comprises a graded-composition AlxGa1-xAs window layer and an exponential-doping GaAs absorber layer. In the deduced model, the physical properties changing with the Al composition are taken into consideration. Simulated current-voltage characteristics are presented and some important factors affecting the conversion efficiency are also illustrated. Compared with the graded-composition and uniform-doping cathode structure, and the uniform-composition and uniform-doping cathode structure, the graded-composition and exponential-doping cathode structure can effectively improve the conversion efficiency, which is ascribed to the twofold built-in electric fields. More strikingly, this graded bandgap structure is especially suitable for photon-enhanced thermionic emission devices since a higher conversion efficiency can be achieved at a lower temperature.

  19. Thermionic photovoltaic energy converter

    Science.gov (United States)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  20. Heat-pipe thermionic reactor concept

    DEFF Research Database (Denmark)

    Storm Pedersen, E.

    1967-01-01

    Main components are reactor core, heat pipe, thermionic converter, secondary cooling system, and waste heat radiator; thermal power generated in reactor core is transported by heat pipes to thermionic converters located outside reactor core behind radiation shield; thermionic emitters are in direct...

  1. Photocathode operation of a thermionic RF gun

    International Nuclear Information System (INIS)

    Thorin, S.; Cutic, N.; Lindau, F.; Werin, S.; Curbis, F.

    2009-01-01

    The thermionic RF gun using a BaO cathode at the MAX-lab linac injector has been successfully commissioned for additional operation as a photocathode gun. By retaining the BaO cathode, lowering the temperature below thermal emission and illuminating it with a UV (263 nm) 9 ps laser pulse a reduced emittance and enhanced emission control has been achieved. Measurements show a normalised emittance of 5.5 mm mrad at 200 pC charge and a maximum quantum efficiency of 1.1x10 -4 . The gun is now routinely switched between storage ring injections in thermionic mode and providing a beam for the MAX-lab test FEL in photocathode mode.

  2. NUCLEAR THERMIONIC SPACE POWER SYSTEMS

    Energy Technology Data Exchange (ETDEWEB)

    Howard, R. C.; Rasor, N. S.

    1963-03-15

    The various concepts for utilizing thermionic conversion in space reactor power plants are described and evaluated. The problems (and progress toward their solution) of the in-core concept, particularly, are considered. Progress in thermionic conversion technology is then reviewed from both the hardware and research points of view. Anticipated progress in thermionic conversion and the possible consequences for the performance of electrical propulsion systems are summarized. 46 references. (D.C.W.)

  3. System modeling for the advanced thermionic initiative single cell thermionic space nuclear reactor

    International Nuclear Information System (INIS)

    Lee, H.H.; Lewis, B.R.; Klein, A.C.; Pawlowski, R.A.

    1993-01-01

    Incore thermionic space reactor design concepts which operate in a nominal power output range of 20 to 40 kWe are described. Details of the neutronics, thermionic, shielding, and heat rejection performance are presented. Two different designs, ATI-Driven and ATI-Driverless, are considered. Comparison of the core overall performance of these two configurations are described. The comparison of these two cores includes the overall conversion efficiency, reactor mass, shield mass, and heat rejection mass. An overall system design has been developed to model the advanced incore thermionic energy conversion based nuclear reactor systems for space applications in this power range

  4. Thermionic nuclear reactor systems

    International Nuclear Information System (INIS)

    Kennel, E.B.

    1986-01-01

    Thermionic nuclear reactors can be expected to be candidate space power supplies for power demands ranging from about ten kilowatts to several megawatts. The conventional ''ignited mode'' thermionic fuel element (TFE) is the basis for most reactor designs to date. Laboratory converters have been built and tested with efficiencies in the range of 7-12% for over 10,000 hours. Even longer lifetimes are projected. More advanced capabilities are potentially achievable in other modes of operation, such as the self-pulsed or unignited diode. Coupled with modest improvements in fuel and emitter material performance, the efficiency of an advanced thermionic conversion system can be extended to the 15-20% range. Advanced thermionic power systems are expected to be compatible with other advanced features such as: (1) Intrinsic subcritically under accident conditions, ensuring 100% safety upon launch abort; (2) Intrinsic low radiation levels during reactor shutdown, allowing manned servicing and/or rendezvous; (3) DC to DC power conditioning using lightweight power MOSFETS; and (4) AC output using pulsed converters

  5. DOD's advanced thermionics program an overview

    International Nuclear Information System (INIS)

    Drake, T.R.

    1998-01-01

    The Defense Special Weapons Agency (DSWA) manages a congressionally mandated program in advanced thermionics research. Guided by congressional language to advance the state-of-the-art in the US and support the Integrated Solar Upper Stage (ISUS) program, DSWA efforts concentrate on four areas: an electrically testable design of a high-performance, in-core thermionic fuel element (TFE), the ISUS program, a microminiature thermionic converter and several modeling efforts. The DSWA domestic program is augmented by several small contracts with Russian institutes, awarded under the former TOPAZ International Program that the Ballistic Missile Defense Organization transferred to DSWA. The design effort at General Atomics will result in an electrically testable, multi-cell TFE for in-core conversion, involving system design and advanced collector and emitter technologies. For the ISUS program, DSWA funded a portion of the engine ground demonstration, including development of the power management system and the planar diodes. Current efforts supporting ISUS include continued diode testing and developing an advanced planar diode. The MTC program seeks to design a mass producable, close-spaced thermionic converter using integrated circuit technologies. Modeling and analysis at DSWA involves development of the Reactor System Mass with Thermionics estimation model (RSMASS-T), developing a new thermionic theory, and reviewing applications for the MTC technology. The Russian deliverables include several reports and associated hardware that describe many of its state-of-the-art thermionic technologies and processes

  6. Thermionic emission from monolayer graphene, sheath formation and its feasibility towards thermionic converters

    Science.gov (United States)

    Misra, Shikha; Upadhyay Kahaly, M.; Mishra, S. K.

    2017-02-01

    A formalism describing the thermionic emission from a single layer graphene sheet operating at a finite temperature and the consequent formation of the thermionic sheath in its proximity has been established. The formulation takes account of two dimensional densities of state configuration, Fermi-Dirac (f-d) statistics of the electron energy distribution, Fowler's treatment of electron emission, and Poisson's equation. The thermionic current estimates based on the present analysis is found to be in reasonably good agreement with experimental observations (Zhu et al., Nano Res. 07, 1 (2014)). The analysis has further been simplified for the case where f-d statistics of an electron energy distribution converges to Maxwellian distribution. By using this formulation, the steady state sheath features, viz., spatial dependence of the surface potential and electron density structure in the thermionic sheath are derived and illustrated graphically for graphene parameters; the electron density in the sheath is seen to diminish within ˜10 s of Debye lengths. By utilizing the graphene based cathode in configuring a thermionic converter (TC), an appropriate operating regime in achieving the efficient energy conversion has been identified. A TC configured with the graphene based cathode (operating at ˜1200 K/work function 4.74 V) along with the metallic anode (operating at ˜400 K/ work function 2.0 V) is predicted to display ˜56% of the input thermal flux into the electrical energy, which infers approximately ˜84% of the Carnot efficiency.

  7. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    Science.gov (United States)

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  8. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

  9. Radioisotope thermionic converters for space applications

    International Nuclear Information System (INIS)

    Miskolczy, G.; Lieb, D.P.

    1990-01-01

    The recent history of radioisotope thermionics is reviewed, with emphasis on the U.S. programs, and the prospects for the future are assessed. In radioisotope thermionic converters the emitter heat is generated by the decay of a radioactive isotope. The thermionic converter emitter is mounted directly on a capsule containing the isotope. The rest of the capsule is generally insulated to reduce thermal loss. The development of isotope-fueled thermionic power systems for space application has been pursued since the late 1950's. The U.S. effort was concentrated on modular systems with alpha emitters as the isotope heat source. In the SNAP-13 program, the heat sources were Cerium isotopes and each module produced about 100 watts. The converters were planar diodes and the capsule was insulated with multi-foil insulation

  10. MATERIALS REQUIREMENTS FOR THERMIONIC ENERGY CONVERSION

    Energy Technology Data Exchange (ETDEWEB)

    Allen, R. C.; Skeen, C. H.

    1963-03-15

    The fundamentals of the thermionic energy conversion and its potential applications are reviewed. Materials problems associated with thermionic emitters are considered in relation to the following: work function; emissivity; vaporization; thermal, mechanical, and electrical properties; chemical stability; permeation; and stability under nuclear radiation. Cesium purity and materials suitable for collectors, electrical leads, support structures, insulators, and seals are also discussed. Experimental work on problems involved is reviewed. It is concluded that significant developments have occurred recently in all areas of thermionic energy conversion. (40 references) (A.G.W.)

  11. The effect of samarium doping on structure and enhanced thermionic emission properties of lanthanum hexaboride fabricated by spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shenlin; Hu, Qianglin [College of Mathematics and Physics, Jinggangshan University, Jian (China); Zhang, Jiuxing; Liu, Danmin [Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing (China); Huang, Qingzhen [NIST Center for Neutron Research, National Institute of Standards and Technology, MD (United States)

    2014-03-15

    Single-phase polycrystalline solid solutions (La{sub 1-x}Sm{sub x})B{sub 6} (x = 0, 0.2, 0.4, 0.8, 1) are fabricated by spark plasma sintering (SPS). This study demonstrates a systematic investigation of structure-property relationships in Sm-doped LaB{sub 6} ternary rare-earth hexaborides. The microstructure, crystallographic orientation, electrical resistivity, and thermionic emission performance of these compounds are investigated. Analysis of the results indicates that samarium (Sm) doping has a noticeable effect on the structure and performance of lanthanum hexaboride (LaB{sub 6}). The analytical investigation of the electron backscatter diffraction confirms that (La{sub 0.6}Sm{sub 0.4})B{sub 6} exhibits a clear (001) texture that results in a low work function. Work functions are determined by pulsed thermionic diode measurements at 1500-1873 K. The (La{sub 0.6}Sm{sub 0.4})B{sub 6} possesses improved thermionic emission properties compared to LaB{sub 6}. The current density of (La{sub 0.6}Sm{sub 0.4})B{sub 6} is 42.4 A cm{sup -2} at 1873 K, which is 17.5% larger than that of LaB{sub 6}. The values of Φ{sub R} for (La{sub 0.6}Sm{sub 0.4})B{sub 6} and LaB{sub 6} are 1.98 ± 0.03 and 1.67 ± 0.03 eV, respectively. Furthermore, the Sm substitution of lanthanum (La) effectively increases the electrical resistivity. These results reveal that Sm doping lead to significantly enhanced thermionic emission properties of LaB{sub 6}. The compound (La{sub 0.6}Sm{sub 0.4})B{sub 6} appears most promising as a future emitter material. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Oscillating thermionic conversion for high-density space power

    International Nuclear Information System (INIS)

    Jacobson, D.L.; Morris, J.F.

    1988-01-01

    The compactness, maneuverability, and productive weight utilization of space nuclear reactors benefit from the use of thermionic converters at high temperature. Nuclear-thermionic-conversion power requirements are discussed, and the role of oscillations in thermionic energy conversion (TEC) history is examined. Proposed TEC oscillations are addressed, and the results of recent studies of TEC oscillations are reviewed. The possible use of high-frequency TEC oscillations to amplify low-frequency ones is considered. The accomplishments of various programs studying the use of high-temperature thermionic oscillators are examined. 16 references

  13. O2-enhanced methanol oxidation reaction at novel Pt-Ru-C co-sputtered electrodes

    International Nuclear Information System (INIS)

    Umeda, Minoru; Matsumoto, Yosuke; Inoue, Mitsuhiro; Shironita, Sayoko

    2013-01-01

    Highlights: ► Novel Pt-Ru-C electrodes were prepared by a co-sputtering technique. ► Co-sputtered electrodes with C result in highly efficient O 2 -enhanced methanol oxidation. ► Pt–Ru-alloy-based co-sputtered electrode induces a negative onset potential of methanol oxidation. ► The Pt-Ru-C electrodes allow a negative onset potential of O 2 -enhanced methanol oxidation. ► The optimum atomic ratios of Pt-Ru-C are Pt: 0.24–0.80, Ru: 0.14–0.61, C: 0.06–0.37. -- Abstract: A Pt-Ru-C electrode has been developed using a co-sputtering technique for use as the anode catalyst of a mixed-reactant fuel cell. The physical and electrochemical characteristics of the electrodes demonstrate that co-sputtered Pt and Ru form a Pt–Ru alloy. The crystallite sizes of the catalysts investigated in this study are reduced by the addition of C to the Pt–Ru alloy. Cu stripping voltammograms suggest that the sputtering of C and the formation of the Pt–Ru alloy synergically increase the electrochemical surface area of the electrodes. The methanol oxidation performances of the prepared electrodes were evaluated in N 2 and O 2 atmospheres; the Pt-Ru-C electrodes achieve an O 2 -induced negative shift in the onset potential of the methanol oxidation (E onset ) and enhance the methanol oxidation current density in the O 2 atmosphere. The mechanism of O 2 -enhanced methanol oxidation with a negative E onset at the Pt-Ru-C electrodes is attributed to a change in the electronic structure of Pt due to the formation of Pt–Ru alloy and the generation of O-based adsorption species by the reduction of O 2 . Finally, the composition of the Pt-Ru-C electrode for the O 2 -enhanced methanol oxidation with a negative E onset was found to be optimal at an atomic ratio of Pt: 0.24–0.80, Ru: 0.14–0.61, and C: 0.06–0.37

  14. Thermionics basic principles of electronics

    CERN Document Server

    Jenkins, J; Ashhurst, W

    2013-01-01

    Basic Principles of Electronics, Volume I : Thermionics serves as a textbook for students in physics. It focuses on thermionic devices. The book covers topics on electron dynamics, electron emission, and the themionic vacuum diode and triode. Power amplifiers, oscillators, and electronic measuring equipment are studied as well. The text will be of great use to physics and electronics students, and inventors.

  15. Deposition and characterization of sputtered hexaboride coatings; Abscheidung und Charakterisierung aufgestaeubter Hexaboridschichten

    Energy Technology Data Exchange (ETDEWEB)

    Waldhauser, W

    1996-06-01

    Hexaborides of the rare-earth elements ReB{sub 6} are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB{sub 6} or single LaB{sub 6} crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB{sub 6}, CeB{sub 6}, SmB{sub 6} and YB{sub 6} targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB{sub 6}, CeB{sub 6} and SmB{sub 6} to YB{sub 6}. The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB{sub 6} coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

  16. High temperature cogeneration with thermionic burners

    International Nuclear Information System (INIS)

    Fitzpatrick, G.O.; Britt, E.J.; Dick, R.S.

    1981-01-01

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging

  17. High temperature cogeneration with thermionic burners

    Science.gov (United States)

    Fitzpatrick, G. O.; Britt, E. J.; Dick, R. S.

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging.

  18. Thermionic detector with multiple layered ionization source

    International Nuclear Information System (INIS)

    Patterson, P. L.

    1985-01-01

    Method and apparatus for analyzing specific chemical substances in a gaseous environment comprises a thermionic source formed of multiple layers of ceramic material composition, an electrical current instrumentality for heating the thermionic source to operating temperatures in the range of 100 0 C. to 1000 0 C., an instrumentality for exposing the surface of the thermionic source to contact with the specific chemical substances for the purpose of forming gas phase ionization of the substances by a process of electrical charge emission from the surface, a collector electrode disposed adjacent to the thermiomic source, an instrumentality for biasing the thermionic source at an electrical potential which causes the gas phase ions to move toward the collector, and an instrumentality for measuring the ion current arriving at the collector. The thermionic source is constructed of a metallic heater element molded inside a sub-layer of hardened ceramic cement material impregnated with a metallic compound additive which is non-corrosive to the heater element during operation. The sub-layer is further covered by a surface-layer formed of hardened ceramic cement material impregnated with an alkali metal compound in a manner that eliminates corrosive contact of the alkali compounds with the heater element. The sub-layer further protects the heater element from contact with gas environments which may be corrosive. The specific ionization of different chemical substances is varied over a wide range by changing the composition and temperature of the thermionic source, and by changing the composition of the gas environment

  19. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  20. Thermionic nuclear reactor with internal heat distribution and multiple duct cooling

    Science.gov (United States)

    Fisher, C.R.; Perry, L.W. Jr.

    1975-11-01

    A Thermionic Nuclear Reactor is described having multiple ribbon-like coolant ducts passing through the core, intertwined among the thermionic fuel elements to provide independent cooling paths. Heat pipes are disposed in the core between and adjacent to the thermionic fuel elements and the ribbon ducting, for the purpose of more uniformly distributing the heat of fission among the thermionic fuel elements and the ducts.

  1. Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

    Science.gov (United States)

    Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

    2018-03-01

    The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

  2. Thermionic cogeneration burner design

    Science.gov (United States)

    Miskolczy, G.; Goodale, D.; Moffat, A. L.; Morgan, D. T.

    Since thermionic converters receive heat at very high temperatures (approximately 1800 K) and reject heat at moderately high temperatures (approximately 800 K), they are useful for cogeneration applications involving high temperature processes. The electric power from thermionic converters is produced as a high amperage, low-voltage direct current. An ideal cogeneration application would be to utilize the reject heat at the collector temperature and the electricity without power conditioning. A cogeneration application in the edible oil industry fulfills both of these requirements since both direct heat and hydrogen gas are required in the hydrogenation of the oils. In this application, the low-voltage direct current would be used in a hydrogen electrolyzer.

  3. Thermionic reactors for space nuclear power

    Science.gov (United States)

    Homeyer, W. G.; Merrill, M. H.; Holland, J. W.; Fisher, C. R.; Allen, D. T.

    1985-01-01

    Thermionic reactor designs for a variety of space power applications spanning the range from 5 kWe to 3 MWe are described. In all of these reactors, nuclear heat is converted directly to electrical energy in thermionic fuel elements (TFEs). A circulating reactor coolant carries heat from the core of TFEs directly to a heat rejection radiator system. The recent design of a thermionic reactor to meet the SP-100 requirements is emphasized. Design studies of reactors at other power levels show that the same TFE can be used over a broad range in power, and that design modifications can extend the range to many megawatts. The design of the SP-100 TFE is similar to that of TFEs operated successfully in test reactors, but with design improvements to extend the operating lifetime to seven years.

  4. A new concept of thermionic converter

    International Nuclear Information System (INIS)

    Musa, G.

    1978-10-01

    The parameters of a new type of thermionic converter which has a number of concentric electrodes, is computed. The obtained theoretical efficiency of this new type of converter is nearly the efficiency of the ideal thermionic converter. The obtained results are explained by the reduction of the radiation loss from the emitter due to the electrode configuration. Efficiencies as high as 20% are expected from this type of converter now in construction. (author)

  5. Development of a thermionic-reactor space-power system. Final summary report

    International Nuclear Information System (INIS)

    1973-01-01

    Initial experimental work led to the award of the first AEC thermionic contract on May 1, 1962, for the development of fission heated thermionic cells with an operating life of 10,000 hours or more. Two types of converters were fabricated: (1) electrically heated, and (2) fission heated where the fuel was either uranium carbide or uranium oxide. Competition between GGA and GE was climaxed on July 1, 1970 by the award to GGA of a contract to develop an in-core thermionic reactor. This report is divided into the following: thermionic research, materials technology, thermionic fuel element development, reactor technology, and systems technology

  6. Thermionic phenomena the collected works of Irving Langmuir

    CERN Document Server

    Suits, C Guy

    1961-01-01

    Thermionic Phenomena is the third volume of the series entitled The Collected Works of Irving Langmuir. This volume compiles articles written during the 1920's and early 1930's, the period when the science of thermionics is beginning to be of importance. This text is divided into two parts. The first part discusses vacuum pumps, specifically examining the effect of space charge and residual gases on thermionic currents in high vacuum. This part also explains fundamental phenomena in electron tubes having tungsten cathodes and the use of high-power vacuum tubes. The second part of this text loo

  7. HEAT Sensor: Harsh Environment Adaptable Thermionic Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Limb, Scott J. [Palo Alto Research Center, Palo Alto, CA (United States)

    2016-05-31

    This document is the final report for the “HARSH ENVIRONMENT ADAPTABLE THERMIONIC SENSOR” project under NETL’s Crosscutting contract DE-FE0013062. This report addresses sensors that can be made with thermionic thin films along with the required high temperature hermetic packaging process. These sensors can be placed in harsh high temperature environments and potentially be wireless and self-powered.

  8. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  9. The Thermionic System Evaluation Test (TSET): Descriptions, limitations, and the involvement of the space nuclear power community

    International Nuclear Information System (INIS)

    Morris, D.B.

    1993-01-01

    Project and test planning for the Thermionic System Evaluation Test (TSET) Project began in August 1990. Since the formalization of the contract agreement two years ago, the TOPAZ-II testing hardware was delivered in May 1992. In the months since the delivery of the test hardware, Russians and Americans working side-by-side installed the equipment and are preparing to begin testing in early 1993. The procurement of the Russian TOPAZ-II unfueled thermionic space nuclear power system (SNP) provides a unique opportunity to understand a complete thermionic system and enhances the possibility for further study of this type of power conversion for space applications. This paper will describe the program and test article, facility and test article limitations, and how the government and industry are encouraged to be involved in the program

  10. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, A.G. [Rzhanov Institute of Semiconductor Physics, Pr. Lavrentieva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation); Alperovich, V.L., E-mail: alper@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Pr. Lavrentieva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)

    2017-02-15

    Highlights: • Electronic properties of Cs/GaAs surface are studied at elevated temperatures. • Heating to ∼100 °C strongly affects photoemission current and surface band bending. • For θ < 0.4 ML photoemission current relaxation is due to band bending. • A spectral proof of the PETE process is obtained at Cs/GaAs thermal cycling. - Abstract: The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °C leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

  11. Barium-Dispenser Thermionic Cathode

    Science.gov (United States)

    Wintucky, Edwin G.; Green, M.; Feinleib, M.

    1989-01-01

    Improved reservoir cathode serves as intense source of electrons required for high-frequency and often high-output-power, linear-beam tubes, for which long operating lifetime important consideration. High emission-current densities obtained through use of emitting surface of relatively-low effective work function and narrow work-function distribution, consisting of coat of W/Os deposited by sputtering. Lower operating temperatures and enhanced electron emission consequently possible.

  12. Thermionic integrated circuit technology for high power space applications

    International Nuclear Information System (INIS)

    Yadavalli, S.R.

    1984-01-01

    Thermionic triode and integrated circuit technology is in its infancy and it is emerging. The Thermionic triode can operate at relatively high voltages (up to 2000V) and at least tens of amperes. These devices, including their use in integrated circuitry, operate at high temperatures (800 0 C) and are very tolerant to nuclear and other radiations. These properties can be very useful in large space power applications such as that represented by the SP-100 system which uses a nuclear reactor. This paper presents an assessment of the application of thermionic integrated circuitry with space nuclear power system technology. A comparison is made with conventional semiconductor circuitry considering a dissipative shunt regulator for SP-100 type nuclear power system rated at 100 kW. The particular advantages of thermionic circuitry are significant reductions in size and mass of heat dissipation and radiation shield subsystems

  13. A50-kW(el) solar energy thermionic power generator for spacecraft

    International Nuclear Information System (INIS)

    Sahin, S.

    1978-01-01

    The technical limits of thermionic reactors in space craft and the potentials of solar energy thermionic converters are discussed. The technical design of a solar energy thermionic generator for 50 kW(el) as a secondary energy source in unmanned space craft is presented. (GG) [de

  14. Enhanced pool boiling critical heat flux induced by capillary wicking effect of a Cr-sputtered superhydrophilic surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Son, Hong Hyun; Seo, Gwang Hyeok; Kim, Sung Joong [Hanyang University, Seoul (Korea, Republic of)

    2016-10-15

    In light of boiling heat transfer, the smooth surface potentially reduces active nucleation of bubbles and rewetting of dry spots near the critical heat flux (CHF). This kind of process is highly likely to deteriorate the CHF. Thus, it is essential to produce appropriate microstructures on the surface for the enhancement of the CHF. In this study, to investigate the microstructural effect of thin film-fabricated surfaces on the pool boiling CHF, we controlled the surface roughness in a narrow range of 0.1-0.25 μm and its morphologies, in the form of micro-scratches using PVD sputtering technique. Specifically for DC magnetron sputtering, pure chromium (Cr) was selected as a target material owing to its high oxidation resistance. In order to analyze the CHF trend with changes in roughness, we introduced existing capillary wicking-based models because superhydrophilic characteristics of microstructures are highly related to the capillary wicking behaviors in micro-flow channels. After Cr sputtering under given conditions, the Cr-sputtered surfaces showed superhydrophilic characteristics and its capability became more enhanced with an increase of surface roughness. Judging from spreading behavior of a liquid droplet, the presence of micro-wicking channels, coupled with Cr nanostructures, effectively enhanced the advancing rate of drop base diameter. The CHF exhibited an increasing trend with increasing surface roughness. However, the enhancement ratio agreed poorly with the predictions of the roughness factor-based models, all of which originated from a conventional static force balance.

  15. Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

    Directory of Open Access Journals (Sweden)

    Franz A. M. Koeck

    2017-12-01

    Full Text Available Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range. These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission. In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to

  16. Bare and protected sputtered-noble-metal films for surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Talaga, David; Bonhommeau, Sébastien

    2014-11-01

    Sputtered silver and gold films with different surface morphologies have been prepared and coated with a benzenethiol self-assembled monolayer. Rough noble metal films showed strong Raman features assigned to adsorbed benzenethiol molecules upon irradiation over a wide energy range in the visible spectrum, which disclosed the occurrence of a significant surface-enhanced Raman scattering with maximal enhancement factors as high as 6 × 106. In addition, the adsorption of ethanethiol onto silver surfaces hinders their corrosion over days while preserving mostly intact enhancement properties of naked silver. This study may be applied to develop stable and efficient metalized probes for tip-enhanced Raman spectroscopy.

  17. Mechanism of explosive emission excitation in thermionic energy conversion processes

    Energy Technology Data Exchange (ETDEWEB)

    Bulyga, A.V.

    1983-01-01

    A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

  18. Thermionic system evaluated test (TSET) facility description

    Science.gov (United States)

    Fairchild, Jerry F.; Koonmen, James P.; Thome, Frank V.

    1992-01-01

    A consortium of US agencies are involved in the Thermionic System Evaluation Test (TSET) which is being supported by the Strategic Defense Initiative Organization (SDIO). The project is a ground test of an unfueled Soviet TOPAZ-II in-core thermionic space reactor powered by electrical heat. It is part of the United States' national thermionic space nuclear power program. It will be tested in Albuquerque, New Mexico at the New Mexico Engineering Research Institute complex by the Phillips Laboratoty, Sandia National Laboratories, Los Alamos National Laboratory, and the University of New Mexico. One of TSET's many objectives is to demonstrate that the US can operate and test a complete space nuclear power system, in the electrical heater configuration, at a low cost. Great efforts have been made to help reduce facility costs during the first phase of this project. These costs include structural, mechanical, and electrical modifications to the existing facility as well as the installation of additional emergency systems to mitigate the effects of utility power losses and alkali metal fires.

  19. A PVTC system integrating photon-enhanced thermionic emission and methane reforming for efficient solar power generation

    Institute of Scientific and Technical Information of China (English)

    Wenjia Li; Hongsheng Wang; Yong Hao

    2017-01-01

    A new photovoltaic-thermochemical (PVTC) conceptual system integrating photon-enhanced thermionic emission (PETE) and methane steam reforming is proposed.Major novelty of the system lies in its potential adaptivity to primary fuels (e.g.methane) and high efficiencies of photovoltaic and thermochemical power generation,both of which result from its operation at much elevated temperatures (700-1000 ℃)compared with conventional photovoltaic-thermal (PVT) systems.Analysis shows that an overall power generation efficiency of 45.3% and a net solar-to-electric efficiency of 39.1% could be reached at an operating temperature of 750 ℃,after considering major losses during solar energy capture and conversion processes.The system is also featured by high solar share (37%) in the total power output,as well as high energy storage capability and very low CO2 emissions,both enabled by the integration of methane reforming with photovoltaic generation at high temperatures.

  20. A NEW THERMIONIC RF ELECTRON GUN FOR SYNCHROTRON LIGHT SOURCES

    Energy Technology Data Exchange (ETDEWEB)

    Kutsaev, Sergey; Agustsson, R.; Hartzell, J; Murokh, A.; Nassiri, A.; Savin, E.; Smirnov, A.V.; Smirnov, A. Yu; Sun, Y.; Verma, A; Waldschmidt, Geoff; Zholents, A.

    2017-06-02

    A thermionic RF gun is a compact and efficient source of electrons used in many practical applications. RadiaBeam Systems and the Advanced Photon Source at Argonne National Laboratory collaborate in developing of a reliable and robust thermionic RF gun for synchrotron light sources which would offer substantial improvements over existing thermionic RF guns and allow stable operation with up to 1A of beam peak current at a 100 Hz pulse repetition rate and a 1.5 μs RF pulse length. In this paper, we discuss the electromagnetic and engineering design of the cavity and report the progress towards high power tests of the cathode assembly of the new gun.

  1. The mechanism of explosive emission excitation in thermionic energy conversion processes

    Science.gov (United States)

    Bulyga, A. V.

    A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

  2. Thermionic conversion reactor technology assessment. Final report

    International Nuclear Information System (INIS)

    1984-02-01

    The in-core thermionic space nuclear power supply may be the only identified reactor-power concept that can meet the SP-100 size functional requirements with demonstrated state-of-the-art reactor system and space-qualified power system component temperatures. The SP-100 configuration limits provide a net 40 m 2 of primary non-deployed radiator area. If a reasonable 7-year degradation allowance of 15% to 20% is provided then the beginning of life (BOL) net power output requirement is about 120 kWe. Consequently, the SP-100 power system must produce a P/A of 2.7 kWe/m 2 . This non-deployed radiator area power density performance can only be reasonably achieved by the thermionic in-core convertr system, the potassium Rankine turbine system and the Stirling engine system. The purpose of this study is to examine past and current tests and data, and to assess the potential for successful development of suitable fueled-thermionic converters that will meet SP-100 and growth requirements. The basis for the assessment will be provided and the recommended key developments plan set forth

  3. Materials for thermionic energy converters

    NARCIS (Netherlands)

    Wolff, L.R.; Hermans, J.M.; Adriaansen, J.K.M.; Gubbels, G.H.M.; Vincenzini, P.

    1987-01-01

    This paper deals with the design and construction of a combustion heated Thermionic Energy Converter (TEC). Main components of this TEC are: 1. A ''Hot Shell'' protecting the TEC from the combustion environment 2. A ''Ceramic Seal'' electrically insulating the emitter from the collector 3. A

  4. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  5. Sputtering-growth of seeded Au nanoparticles for nanogap-assisted surface-enhanced Raman scattering (SERS) biosensing

    Science.gov (United States)

    Fu, Chit Yaw; U. S., Dinish; Rautela, Shashi; Goh, Douglas Wenda; Olivo, Malini

    2011-12-01

    Gold-coated array patterned with tightly-packed nanospheres was developed as a substrate base for constructing SERSenriched nanogaps with Au-nanoparticles (GNPs). Using 1,2-ethanedithiol as a linker, Au-NPs (=17-40nm) were anchored covalently on the sphere-array. Thin Au layer was sputtered on the substrate to mask the citrate coating of GNPs that could demote the sensing mechanism. The negatively-charged GNP surface warrants the colloidal stability, but the resulting repulsive force keeps the immobilized NPs apart by about 40nm. The attained gap size is inadequately narrow to sustain any intense enhancement owing to the near-field nature of SERS. Minimal amount of NaCl was then added to slightly perturb the colloidal stability by reducing their surface charge. Notably, the interparticle-gap reduces at increasing amount of salt, giving rise to increased packing density of GNPs. The SERS enhancement is also found to exponentially increase at decreasing gap size. Nevertheless, the minimum gap achieved is limited to merely 7nm. Excessive addition of salt would eventually induce complete aggregation of particles, forming clustered NPs on the array. A simple sputtering-growth approach is therefore proposed to further minimize the interparticle gap by enlarging the seeded NPs based on mild sputtering. The SEM images confirm that the gap below 7nm is achievable. With advent of the colloidal chemistry, the combined salt-induced aggregation and sputtering-growth techniques can be applied to engineer interparticle gap that is crucial to realize an ultrasensitive SERS biosensor. The proposed two-step preparation can be potentially adopted to fabricate the SERS-enriched nanogaps on the microfluidics platform.

  6. Thermionics. A bibliography with abstracts. Search period covered: 1970--Apr 1975. [190 references

    Energy Technology Data Exchange (ETDEWEB)

    Grooms, D.W.

    1975-04-01

    Research on thermionic power generation, power plant design, converter design, and basic research on thermionic materials are cited in the bibliography. Spacecraft applications are included. (Contains 190 abstracts).

  7. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [College of Engineering and Technology, Northeast Forestry University, Harbin 150040 (China); State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China)

    2016-08-15

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  8. An economic analysis of the deposition of electrochromic WO3 via sputtering or plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Garg, D.; Henderson, P.B.; Hollingsworth, R.E.; Jensen, D.G.

    2005-01-01

    The costs of manufacturing electrochromic WO 3 thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO 3 for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF 6 , sputtering cost is dominated by labor and depreciation

  9. Isotopic Thermionic Generator

    International Nuclear Information System (INIS)

    Clemot, M.; Devin, B.; Durand, J.P.

    1967-01-01

    This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [fr

  10. Influence of surface topography on the sputtering yields of silver

    International Nuclear Information System (INIS)

    Pan Jisheng; Wang Zhenxia; Tao Zhenlan; Zhang Jiping

    1992-01-01

    The sputtering yields of silver have been measured as a function of the fluence of incident Ar + ions (27 keV) using the collector technique and RBS analysis. The irradiated surface was examined by scanning electron microscopy (SEM). It is shown that the sputtering yields of surfaces with topography are enhanced relative to smooth surfaces of silver, but the extent of the enhancement depends on the irradiation dose. The experimental results can be explained assuming that the surface topography and sputtering yield are a function of incident angle. It is obvious that the surface topography is an important factor to influence the sputtering yield. The term ''apparent sputtering yield'' has specifically been used when referring to the experimental sputtering yield of a surface with topography, to emphasize the difference with a smooth surface. (orig.)

  11. Low-dose effects in the sputtering of evaporated films

    Energy Technology Data Exchange (ETDEWEB)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

    1983-05-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile.

  12. Thermionic integrated circuits: electronics for hostile environments

    International Nuclear Information System (INIS)

    Lynn, D.K.; McCormick, J.B.; MacRoberts, M.D.J.; Wilde, D.K.; Dooley, G.R.; Brown, D.R.

    1985-01-01

    Thermionic integrated circuits combine vacuum tube technology with integrated circuit techniques to form integrated vacuum triode circuits. These circuits are capable of extended operation in both high-temperature and high-radiation environments

  13. NASA thermionic-conversion program

    International Nuclear Information System (INIS)

    Morris, J.F.

    1977-01-01

    NASA's program for applied research and technology (ART) in thermionic energy conversion (TEC) has made worthwhile contributions in a relatively short time: Many of these accomplishments are incremental, yet important. And their integration has yielded gains in performance as well as in the knowledge necessary to point productive directions for future work. Both promise and problems derive from the degrees of freedom allowed by the current programmatic emphasis on out-of-core thermionics. Materials and designs previously prohibited by in-core nucleonics and geometries now offer new potentialities. But as a result a major TEC-ART responsibility is the efficient reduction of the glitter of diverse possibilities to the hard glint of reality. As always high-temperature material effects are crucial to the level and duration of TEC performance: New electrodes must increase and maintain power output regardless of emitter-vapor deposition on collectors. They must also serve compatibly with hot-shell alloys. And while space TEC must face high-temperature vaporization problems externally as well as internally, terrestrial TEC must tolerate hot corrosive atmospheres outside and near-vacuum inside. Furthermore, some modes for decreasing interelectrode losses appear to require rather demanding converter geometries to produce practical power densities. In these areas and others significant progress is being made in the NASA TEC-ART Program

  14. Low-dose effects in the sputtering of evaporated films

    International Nuclear Information System (INIS)

    Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.

    1983-01-01

    We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile. (author)

  15. CID thermionic gun system

    International Nuclear Information System (INIS)

    Koontz, R.F.

    1981-10-01

    A new high-current thermionic gun has been installed on the CID injector at SLAC and brought into operation. The gun and pulser system generate three nanosecond pulses of about six amps peak which, when bunched in the subharmonic buncher system, produce in excess of 10 11 electrons in a single S-band accelerated bunch. Preliminary operation of the gun is described, and details of the avalanche cathode drive pulser are presented

  16. CID thermionic gun system

    International Nuclear Information System (INIS)

    Koontz, R.F.

    1982-01-01

    A new high-current thermionic gun has been installed on the CID injector at SLAC and brought into operation. The gun and pulser system generate three nanosecond pulses of about six amps peak which, when bunched in the subharmonic buncher system, produce in excess of 10 11 electrons in a single S-band accelerated bunch. Preliminary operation of the gun is described, and details of the avalanche cathode drive pulser are presented

  17. Advanced thermionic reactor systems design code

    International Nuclear Information System (INIS)

    Lewis, B.R.; Pawlowski, R.A.; Greek, K.J.; Klein, A.C.

    1991-01-01

    An overall systems design code is under development to model an advanced in-core thermionic nuclear reactor system for space applications at power levels of 10 to 50 kWe. The design code is written in an object-oriented programming environment that allows the use of a series of design modules, each of which is responsible for the determination of specific system parameters. The code modules include a neutronics and core criticality module, a core thermal hydraulics module, a thermionic fuel element performance module, a radiation shielding module, a module for waste heat transfer and rejection, and modules for power conditioning and control. The neutronics and core criticality module determines critical core size, core lifetime, and shutdown margins using the criticality calculation capability of the Monte Carlo Neutron and Photon Transport Code System (MCNP). The remaining modules utilize results of the MCNP analysis along with FORTRAN programming to predict the overall system performance

  18. High Efficiency Thermionics (HET-IV) and Converter Advancement (CAP) programs. Final reports

    Energy Technology Data Exchange (ETDEWEB)

    Geller, C.B.; Murray, C.S.; Riley, D.R. [Bettis Atomic Power Lab., West Mifflin, PA (United States); Desplat, J.L.; Hansen, L.K.; Hatch, G.L.; McVey, J.B.; Rasor, N.S. [Rasor Associates, Inc., Sunnyvale, CA (United States)

    1996-04-01

    This report contains the final report of the High Efficiency Thermionics (HET-IV) Program, Attachment A, performed at Rasor Associates, Inc. (RAI); and the final report of the Converter Advancement Program (CAP), performed at the Bettis Atomic Power Laboratory, Attachment B. The phenomenology of cesium-oxygen thermionic converters was elucidated in these programs, and the factors that had prevented the achievement of stable, enhanced cesium-oxygen converter performance for the previous thirty years were identified. Based on these discoveries, cesium-oxygen vapor sources were developed that achieved stable performance with factor-of-two improvements in power density and thermal efficiency, relative to conventional, cesium-only ignited mode thermionic converters. Key achievements of the HET-IV/CAP programs are as follows: a new technique for measuring minute traces of oxygen in cesium atmospheres; the determination of the proper range of oxygen partial pressures for optimum converter performance--10{sup {minus}7} to 10{sup {minus}9} torr; the discovery, and analysis of the cesium-oxygen liquid migration and compositional segregation phenomena; the successful use of capillary forces to contain the migration phenomenon; the use of differential heating to control compositional segregation, and induce vapor circulation; the development of mechanically and chemically stable, porous reservoir structures; the development of precise, in situ oxygen charging methods; stable improvements in emitter performance, up to effective emitter bare work functions of 5.4 eV; stable improvements in barrier index, to value below 1.8 Volts; the development of detailed microscopic models for cesium-oxygen reservoir dynamics and collector work function behavior; and the discovery of new relationships between electrode geometry and Schock Instability.

  19. New features of the MAX IV thermionic pre-injector

    Energy Technology Data Exchange (ETDEWEB)

    Andersson, J., E-mail: joel.andersson@maxiv.lu.se; Olsson, D., E-mail: david.olsson@maxiv.lu.se; Curbis, F.; Malmgren, L.; Werin, S.

    2017-05-21

    The MAX IV facility in Lund, Sweden consists of two storage rings for production of synchrotron radiation. The smaller 1.5 GeV ring is presently under construction, while the larger 3 GeV ring is being commissioned. Both rings will be operating with top-up injections from a full-energy injector. During injection, the electron beam is first delivered to the main injector from a thermionic pre-injector which consists of a thermionic RF gun, a chopper system, and an energy filter. In order to reduce losses of high-energy electrons along the injector and in the rings, the electron beam provided by the thermionic pre-injector should have the correct time structure and energy distribution. In this paper, the design of the MAX IV thermionic pre-injector with all its sub components is presented. The electron beam delivered by the pre-injector and its dependence on parameters such as optics, cathode temperature, and RF power are studied. Measurements are here compared with simulation results obtained by particle tracking and electromagnetic codes. The chopper system is described in detail, and different driving schemes that optimize the injection efficiency for the two storage rings are investigated. During operation, it was discovered that the structure of the beam delivered by the gun is affected by mode beating between the accelerating and a low-order mode. This mode beating is also studied in detail. Finally, initial measurements of the electron beam delivered to the 3 GeV ring during commissioning are presented.

  20. Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

    Science.gov (United States)

    Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

    2011-01-01

    A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

  1. Dexter - A one-dimensional code for calculating thermionic performance of long converters.

    Science.gov (United States)

    Sawyer, C. D.

    1971-01-01

    This paper describes a versatile code for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are given.

  2. An economic analysis of the deposition of electrochromic WO{sub 3} via sputtering or plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Garg, D. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States); Henderson, P.B. [Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195-7201 (United States)]. E-mail: henderpb@airproducts.co; Hollingsworth, R.E. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States); Jensen, D.G. [ITN Energy Systems Inc., 8130 Shaffer Pkwy, Littleton, CO 80127 (United States)

    2005-06-15

    The costs of manufacturing electrochromic WO{sub 3} thin films deposited by either radio frequency plasma enhanced chemical vapor deposition (PECVD) or DC reactive magnetron sputtering of metal targets were modeled. Both inline systems for large area glass substrates and roll-to-roll systems for flexible webs were compared. Costs of capital, depreciation, raw materials, labor, power, and other miscellaneous items were accounted for in the model. The results predict that on similar sized systems, PECVD can produce electrochromic WO{sub 3} for as little as one-third the cost, and have more than 10 times the annual production capacity of sputtering. While PECVD cost is dominated by raw materials, primarily WF{sub 6}, sputtering cost is dominated by labor and depreciation.

  3. DEXTER: A one-dimensional code for calculating thermionic performance of long converters

    Science.gov (United States)

    Sawyer, C. D.

    1971-01-01

    A versatile code is described for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are included along with a user's manual.

  4. Physical sputtering of metallic systems by charged-particle impact

    International Nuclear Information System (INIS)

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

  5. Evidence for cluster shape effects on the kinetic energy spectrum in thermionic emission.

    Science.gov (United States)

    Calvo, F; Lépine, F; Baguenard, B; Pagliarulo, F; Concina, B; Bordas, C; Parneix, P

    2007-11-28

    Experimental kinetic energy release distributions obtained for the thermionic emission from C(n) (-) clusters, 10theory, these different features are analyzed and interpreted as the consequence of contrasting shapes in the daughter clusters; linear and nonlinear isomers have clearly distinct signatures. These results provide a novel indirect structural probe for atomic clusters associated with their thermionic emission spectra.

  6. On thermionic emission from plasma-facing components in tokamak-relevant conditions.

    Czech Academy of Sciences Publication Activity Database

    Komm, Michael; Ratynskaia, S.; Tolias, P.; Cavalier, Jordan; Dejarnac, Renaud; Gunn, J. P.; Podolník, Aleš

    2017-01-01

    Roč. 59, č. 9 (2017), č. článku 094002. ISSN 0741-3335 R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : thermionic * PIC * tungsten * tokamak * thermionic emission * plasma facing components * particle-in-cell Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.392, year: 2016 http://iopscience.iop.org/article/10.1088/1361-6587/aa78c4/pdf

  7. Thermionic energy conversion heat - electric power; Termojonisk energiomvandling vaerme-elektrisk energi

    Energy Technology Data Exchange (ETDEWEB)

    Holmlid, L; Svensson, R [Gothenburg Univ. and Chalmers Univ. of Technology (Sweden)

    1993-09-15

    Research and development related to Thermionic Energy Converters (TEC) in Holland and Sweden is directed towards terrestrial applications, while the development work in Russia and the US primarily is directed towards thermionic nuclear reactor for use in space. We have during the project continued our work on the utilization of the so called Rydberg matter in converters. Our patented construction has very good (low) values of the barrier index (figure of merit for the converter), probably the lowest ones ever measured. International patents have been applied for as well. We can summarize the achievements of the project such that solutions to practically all the problems related to the inner function of thermionic converters have been found. During this year a large number of studies have been carried out concerning the properties of the Rydberg matter in the TEC, and related to the highly excited states of Cs which exist in the TEC, partially in cooperation with an American research company. An international conference within the TEC field has been arranged in Gothenburg. Two Ph.D. theses are also under completion within the project

  8. Thermionic combustor application to combined gas and steam turbine power plants

    Science.gov (United States)

    Miskolczy, G.; Wang, C. C.; Lieb, D. P.; Margulies, A. E.; Fusegni, L. J.; Lovell, B. J.

    A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air; the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh.

  9. Thermionic combustor application to combined gas and steam turbine power plants

    International Nuclear Information System (INIS)

    Miskolczy, G.; Wang, C.C.; Lieb, D.P.

    1981-01-01

    A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air, the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh

  10. SP-100 thermionic technology program annual integrated technical progress report for the period ending September 30, 1984

    International Nuclear Information System (INIS)

    Holland, J.W.

    1984-11-01

    The thermionic technology program addresses the feasibility issues of a seven-year-life thermionic fuel element (TFE) for the SP-100 Thermionic Reactor Space Power System. These issues relate to the extension of TFE lifetime from three to seven years, one of the SP-100 requirements. The technology to support three-year lifetimes was demonstrated in the earlier TFE development program conducted in the late-1960s and 1970s. Primary life-limiting factors were recognized to be thermionic emitter dimensional increases due to swelling of the nuclear fuel and electrical structural damage from fast neutrons. The 1984-85 technology program is investigating the fueled emitter and insulator lifetime issues, both experimentally and analytically. The goal is to analytically project the lifetime of the fueled emitter and insulator and to experimentally verify these projection methods. In 1984, the efforts were largely devoted to the design and building of fueled emitters for irradiation in 1985, validation of fuel-emitter models, development of irradiation-resistant metal-ceramic seal and sheath insulator, modeling of insulator lifetime, and development of wide-spread, high-performance thermionic converters

  11. Enhanced saturation of sputtered amorphous SiN film frameworks using He- and Ne-Penning effects

    Science.gov (United States)

    Sugimoto, Iwao; Nakano, Satoko; Kuwano, Hiroki

    1994-06-01

    Optical emission spectroscopy reveals that helium and neon gases enhance the nitridation reactivity of the nitrogen plasma by Penning effects during magnetron sputtering of the silicon target. These excited nitrogen plasmas promote the saturation of frameworks of the resultant silicon nitride films. X-ray photoelectron spectroscopy, electron spin resonance, and x-ray diffraction analyses provide insight into the structure of these films, and thermal desorption mass spectroscopy reveals the behavior of volatile species in these films.

  12. Thermionic emission of cermets made of refractory carbides

    International Nuclear Information System (INIS)

    Samsonow, G.W.; Bogomol, I.W.; Ochremtschuk, L.N.; Podtschernjajewa, I.A.; Fomenko, W.S.

    1975-01-01

    In order to improve the resistance to thermal variations of refractory carbides having good behavior for thermionic emission, they have been combined with transition metals d. Thermionic emission was studied with cermets in compact samples. Following systems were examined: TiC-Nb, TiC-Mo, TiC-W, ZrC-Nb, ZrC-Mo, ZrC-W, WC-Mo with compositions of: 75% M 1 C-25% M 2 , 50%M 1 C-50%M 2 , 25%M 1 C-75%M 2 . When following the variation of electron emission energy phi versus the composition, it appears that in the range of mixed crystals (M 1 M 2 )C, phi decreases and the resistance to thermal variations of these phases is higher than that of individual carbides. The study of obtained cermets shows that their resistance to thermal variations is largely superior to the one of starting carbides; TiC and ZrC carbides, combined with molybdenum and tungsten support the highest number of thermic cycles

  13. Gridded thermionic gun and integral superconducting ballistic bunch compression cavity

    Energy Technology Data Exchange (ETDEWEB)

    Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

    2015-11-16

    Electron-Ion colliders such as the Medium energy Electron Ion Collider (MEIC) being developed by JLAB require high current electrons with low energy spread for electron cooling of the collider ring. Accelerator techniques for improving bunch charge, average current, emittance, and energy spread are required for Energy Recovery Linacs (ERLs) and Circulator Rings (CR) for next generation colliders for nuclear physics experiments. Example candidates include thermionic-cathode electron guns with RF accelerating structures. Thermionic cathodes are known to produce high currents and have excellent lifetime. The success of the IR and THz Free-Electron Laser (FEL) designed and installed by Advanced Energy Systems at the Fritz Haber Institute (FHI) of the Max Planck Society in Berlin [1,2] demonstrates that gridded thermionic cathodes and rf systems be considered for next generation collider technology. In Phase 1 Advanced Energy Systems (AES) developed and analyzed a design concept using a superconducting cavity pair and gridded thermionic cathode. Analysis included Beam Dynamics and thermal analysis to show that a design of this type is feasible. The latest design goals for the MEIC electron cooler were for electron bunches of 420 pC at a frequency of 952.6 MHz with a magnetic field on the cathode of 2kG. This field magnetizes the beam imparting angular momentum that provides for helical motion of the electrons in the cooling solenoid. The helical motion increases the interaction time and improves the cooling efficiency. A coil positioned around the cathode providing 2kG field was developed. Beam dynamics simulations were run to develop the particle dynamics near the cathode and grid. Lloyd Young added capability to Tstep to include space charge effects between two plates and include image charge effects from the grid. He also added new pepper-pot geometry capability to account for honeycomb grids. These additions were used to develop the beam dynamics for this gun. The

  14. Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

    Science.gov (United States)

    Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

    2012-01-01

    Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  15. Sputtering and mixing of supported nanoparticles

    International Nuclear Information System (INIS)

    Jiménez-Sáez, J.C.; Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J.

    2013-01-01

    Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed

  16. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  17. Sputtering of nano-grains by energetic ions

    CERN Document Server

    Bringa, E M

    2002-01-01

    Sputtering from grains with a size of tens of nanometers is important in a number of astrophysical environments having a variety of plasma properties and can have applications in nano-technology. Since energy deposition by incident ions or electrons can create 'hot' regions in a small grain, thermal spike (TS) models have been applied to estimate the sputtering. The excitations produced by a fast ion are often assumed to form a 'hot' cylindrical track. In this paper we use molecular dynamics (MD) calculations to describe the energy transport and sputtering due to the creation of a 'hot' track in a grain with one quarter million atoms. We show the enhancement due to grain size and find that TS models work over a limited range of excitation densities. Discrepancies of several orders of magnitude are found when comparing our MD results for sputtering of small dust grains to those obtained by the astrophysical community using spike models.

  18. Investigation of cellular microstructure and enhanced coercivity in sputtered Sm2(CoCuFeZr)17 film

    International Nuclear Information System (INIS)

    Bhatt, Ranu; Schütz, G.; Bhatt, Pramod

    2014-01-01

    We have investigated the effect of annealing temperature on the microstructure and magnetic properties of Sm 2 (CoCuFeZr) 17 films prepared using ion beam sputtering at room temperature. The as-deposited film shows randomly oriented polycrystalline grains and exhibits small coercivity (H C ) of 0.04 T at room temperature. Post annealing of these films at 700 °C under Ar atmosphere shows significant changes in the microstructure transforming it to the development of cellular growth, concomitant with enhanced coercivity up to 1.3 T. The enhanced coercivity is explained using the domain wall pinning mechanism

  19. Sputtered catalysts

    International Nuclear Information System (INIS)

    Tyerman, W.J.R.

    1978-01-01

    A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

  20. X-Band Thermionic Cathode RF Gun at UTNL

    CERN Document Server

    Fukasawa, Atsushi; Dobashi, Katsuhiro; Ebina, Futaro; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Matsuo, Kennichi; Ogino, Haruyuki; Sakae, Hisaharu; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji

    2005-01-01

    The X-band (11.424 GHz) linac for compact Compton scattering hard X-ray source are under construction at Nuclear Engineering Research Laboratory, University of Tokyo. This linac designed to accelerate up to 35 MeV, and this electron beam will be used to produce hard X-ray by colliding with laser. It consists of a thermionic cathode RF gun, an alpha magnet, and a traveling wave tube. The gun has 3.5 cells (unloaded Q is 8250) and will be operated at pi-mode. A dispenser cathode is introduced. Since the energy spread of the beam from the gun is predicted to be broad due to the continuous emission from the thermionic cathode, a slit is placed in the alpha magnet to eliminate low energy electrons. The simulation on the injector shows the beam energy 2.9 MeV, the charge 23 pC/bunch, and the emittance less than 10 mm.mrad. The experiment on the gun is planed in the beginning of 2005, and the details will be discussed on the spot.

  1. Thermionic cogeneration burner assessment study. Third quarterly technical progress report, April-June, 1983

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    The specific tasks of this study are to mathematically model the thermionic cogeneration burner, experimentally confirm the projected energy flows in a thermal mock-up, make a cost estimate of the burner, including manufacturing, installation and maintenance, review industries in general and determine what groups of industries would be able to use the electrical power generated in the process, select one or more industries out of those for an in-depth study, including determination of the performance required for a thermionic cogeneration system to be competitive in that industry. Progress is reported. (WHK)

  2. The effect of FR enhancement in reactive ion beam sputtered Bi, Gd, Al-substituted iron- garnets: Bi2O3 nanocomposite films

    OpenAIRE

    Berzhansky, V.; Shaposhnikov, A.; Karavainikov, A.; Prokopov, A.; Mikhailova, T.; Lukienko, I.; Kharchenko, Yu.; Miloslavskaya, O.; Kharchenko, N.

    2012-01-01

    The effect of considerable Faraday rotation (FR) and figure of merit (Q) enhancement in Bi, Gd, Al-substituted iron garnets: Bi2O3 nano-composite films produced by separate reactive ion beam sputtered Bi:YIG and Bi2O3 films was found. It reached threefold enhancement of the FR and twofold of the Q one on GGG substrates.

  3. Advanced capabilities and applications of a sputter-RBS system

    International Nuclear Information System (INIS)

    Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

    1999-01-01

    In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

  4. SERS spectra of pyridine adsorbed on nickel film prepared by magnetron sputtering

    Science.gov (United States)

    Li, Daoyong; Ouyang, Yu; Chen, Li; Cao, Weiran; Shi, Shaohua

    2011-02-01

    As a repeating well and cheaper enhancement substrate, the nickel film was fabricated with magnetron sputtering coating instrument. Surface enhanced Raman spectra (SERS) of pyridine adsorbed on this nickel film are compared with the experimental values of gaseous pyridine, the theoretical value of pyridine solution listed in other literatures and our method is better than electro-chemical etching electrode method for large scale preparation. The enhancement factor of the nickel film is calculated and the result indicates that magnetron sputtering coating technology is feasible for obtaining good SERS active surface.

  5. Isotope puzzle in sputtering

    International Nuclear Information System (INIS)

    Zheng Liping

    1998-01-01

    Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

  6. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Science.gov (United States)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-08-01

    Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor-liquid-solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  7. Processes of preparation, deposition and analysis of thermionic emissive substances

    International Nuclear Information System (INIS)

    Romao, B.M. Verdelli; Muraro Junior, A.; Tessaroto, L.A.B.; Takahashi, J.

    1992-09-01

    This paper shows the results of the optimization of the process of preparation and deposition of thermionic emissive substances that are used in the oxide-cathodes which are utilized in the gun of the IEAv linear electron accelerator. (author). 5 refs., 5 figs

  8. Non-equilibrium thermionic electron emission for metals at high temperatures

    Science.gov (United States)

    Domenech-Garret, J. L.; Tierno, S. P.; Conde, L.

    2015-08-01

    Stationary thermionic electron emission currents from heated metals are compared against an analytical expression derived using a non-equilibrium quantum kappa energy distribution for the electrons. The latter depends on the temperature decreasing parameter κ ( T ) , which decreases with increasing temperature and can be estimated from raw experimental data and characterizes the departure of the electron energy spectrum from equilibrium Fermi-Dirac statistics. The calculations accurately predict the measured thermionic emission currents for both high and moderate temperature ranges. The Richardson-Dushman law governs electron emission for large values of kappa or equivalently, moderate metal temperatures. The high energy tail in the electron energy distribution function that develops at higher temperatures or lower kappa values increases the emission currents well over the predictions of the classical expression. This also permits the quantitative estimation of the departure of the metal electrons from the equilibrium Fermi-Dirac statistics.

  9. Carbon-based sputtered coatings for enhanced chitosan-based films properties

    Science.gov (United States)

    Fernandes, C.; Calderon V., S.; Ballesteros, Lina F.; Cerqueira, Miguel A.; Pastrana, L. M.; Teixeira, José A.; Ferreira, P. J.; Carvalho, S.

    2018-03-01

    In order to make bio-based packaging materials competitive in comparison to petroleum-based one, some of their properties need to be improved, among which gas permeability is of crucial importance. Thus, in this work, carbon-based coatings were applied on chitosan-based films by radiofrequency reactive magnetron sputtering aiming to improve their barrier properties. Chemical and morphological properties were evaluated in order to determine the effect of the coatings on the chemical structure, surface hydrophobicity and barrier properties of the system. Chemical analysis, performed by electron energy loss spectroscopy and Fourier transform infrared spectroscopy, suggests similar chemical characteristics among all coatings although higher incorporation of hydrogen as the acetylene flux increases was observed. On the other hand, scanning transmission electron microscopy revealed that the porosity of the carbon layer can be tailored by the acetylene flux. More importantly, the chitosan oxygen permeability showed a monotonic reduction as a function of the acetylene flux. This study opens up new opportunities to apply nanostructured coatings on bio-based polymer for enhanced oxygen barrier properties.

  10. Small sample analysis using sputter atomization/resonance ionization mass spectrometry

    International Nuclear Information System (INIS)

    Christie, W.H.; Goeringer, D.E.

    1986-01-01

    We have used secondary ion mass spectrometry (SIMS) to investigate the emission of ions via argon sputtering from U metal, UO 2 , and U 3 O 8 samples. We have also used laser resonance ionization techniques to study argon-sputtered neutral atoms and molecules emitted from these same samples. For the case of U metal, a significant enhancement in detection sensitivity for U is obtained via SA/RIMS. For U in the fully oxidized form (U 3 O 8 ), SA/RIMS offers no improvement in U detection sensitivity over conventional SIMS when sputtering with argon. 9 refs., 1 fig., 2 tabs

  11. Thermionic reactor power conditioner design for nuclear electric propulsion.

    Science.gov (United States)

    Jacobsen, A. S.; Tasca, D. M.

    1971-01-01

    Consideration of the effects of various thermionic reactor parameters and requirements upon spacecraft power conditioning design. A basic spacecraft is defined using nuclear electric propulsion, requiring approximately 120 kWe. The interrelationships of reactor operating characteristics and power conditioning requirements are discussed and evaluated, and the effects on power conditioner design and performance are presented.

  12. A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

    Science.gov (United States)

    Morris, J. F.; Merrill, O. S.; Reddy, H. K.

    1981-01-01

    Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

  13. A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

    Science.gov (United States)

    Morris, J. F.; Merrill, O. S.; Reddy, H. K.

    Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

  14. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-05-15

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

  15. Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

    International Nuclear Information System (INIS)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

    2013-01-01

    Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

  16. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    International Nuclear Information System (INIS)

    Setti, Grazielle O.; Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J.; Joanni, Ednan; Jesus, Dosil P.

    2015-01-01

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets

  17. Sputtered gold-coated ITO nanowires by alternating depositions from Indium and ITO targets for application in surface-enhanced Raman scattering

    Energy Technology Data Exchange (ETDEWEB)

    Setti, Grazielle O. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Mamián-López, Mónica B.; Pessoa, Priscila R.; Poppi, Ronei J. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil); Joanni, Ednan, E-mail: ednan.joanni@cti.gov.br [Renato Archer Information Technology Center, Rodovia Dom Pedro I (SP-65), Km 143,6 – Amarais, 13069-901 Campinas, SP (Brazil); Jesus, Dosil P. [Institute of Chemistry, University of Campinas, Campinas, P.O. Box 6154, 13083-970 Campinas, SP (Brazil)

    2015-08-30

    Graphical abstract: - Highlights: • ITO nanowires were grown by the sputtering method using a new synthesis procedure. • By changing the deposition parameters the morphology and dimensions of the nanostructures were modified. • Seed layer thickness was an important factor for obtaining branched nanowires. • SERS substrates having good performance and a high application potential were produced. • The first Raman results for our substrates are already comparable to commercial substrates. - Abstract: Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.

  18. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  19. Alternative model of space-charge-limited thermionic current flow through a plasma

    Science.gov (United States)

    Campanell, M. D.

    2018-04-01

    It is widely assumed that thermionic current flow through a plasma is limited by a "space-charge-limited" (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. Here, we formulate a fundamentally different current-limited mode. In the "inverse" mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. The inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

  20. Reactive magnetron sputtering deposition of bismuth tungstate onto titania nanoparticles for enhancing visible light photocatalytic activity

    Energy Technology Data Exchange (ETDEWEB)

    Ratova, Marina, E-mail: marina_ratova@hotmail.com [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Kelly, Peter J.; West, Glen T. [Surface Engineering Group, School of Engineering, Manchester Metropolitan University, Manchester, M1 5GD (United Kingdom); Tosheva, Lubomira; Edge, Michele [School of Science and the Environment, Manchester Metropolitan University, Manchester M1 5GD (United Kingdom)

    2017-01-15

    Highlights: • Bismuth tungstate coatings were deposited by reactive magnetron sputtering. • Oscillating bowl was introduced to the system to enable coating of nanopartulates. • Deposition of Bi{sub 2}WO{sub 6} enhanced visible light activity of titania nanoparticles. • The best results were obtained for coating with Bi:W ratio of approximately 2:1. • Deposition of Bi{sub 2}WO{sub 6} onto TiO{sub 2} resulted in more efficient electron-hole separation. - Abstract: Titanium dioxide − bismuth tungstate composite materials were prepared by pulsed DC reactive magnetron sputtering of bismuth and tungsten metallic targets in argon/oxygen atmosphere onto anatase and rutile titania nanoparticles. The use of an oscillating bowl placed beneath the two magnetrons arranged in a co-planar closed field configuration enabled the deposition of bismuth tungstate onto loose powders, rather than a solid substrate. The atomic ratio of the bismuth/tungsten coatings was controlled by varying the power applied to each target. The effect of the bismuth tungstate coatings on the phase, optical and photocatalytic properties of titania was investigated by X-ray diffraction, energy-dispersive X-ray spectroscopy (EDX), Brunauer–Emmett–Teller (BET) surface area measurements, transmission electron microscopy (TEM), UV–vis diffuse reflectance spectroscopy and an acetone degradation test. The latter involved measurements of the rate of CO{sub 2} evolution under visible light irradiation of the photocatalysts, which indicated that the deposition of bismuth tungstate resulted in a significant enhancement of visible light activity, for both anatase and rutile titania particles. The best results were achieved for coatings with a bismuth to tungsten atomic ratio of 2:1. In addition, the mechanism by which the photocatalytic activity of the TiO{sub 2} nanoparticles was enhanced by compounding it with bismuth tungstate was studied by microwave cavity perturbation. The results of these

  1. Investigation of cellular microstructure and enhanced coercivity in sputtered Sm{sub 2}(CoCuFeZr){sub 17} film

    Energy Technology Data Exchange (ETDEWEB)

    Bhatt, Ranu, E-mail: rbhatt@barc.gov.in; Schütz, G. [Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstr. 3, 70569 Stuttgart (Germany); Bhatt, Pramod [Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2014-03-14

    We have investigated the effect of annealing temperature on the microstructure and magnetic properties of Sm{sub 2}(CoCuFeZr){sub 17} films prepared using ion beam sputtering at room temperature. The as-deposited film shows randomly oriented polycrystalline grains and exhibits small coercivity (H{sub C}) of 0.04 T at room temperature. Post annealing of these films at 700 °C under Ar atmosphere shows significant changes in the microstructure transforming it to the development of cellular growth, concomitant with enhanced coercivity up to 1.3 T. The enhanced coercivity is explained using the domain wall pinning mechanism.

  2. Photocatalytic activity of bipolar pulsed magnetron sputter deposited TiO{sub 2}/TiWO{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Weng, Ko-Wei; Hu, Chung-Hsuan; Hua, Li-Yu; Lee, Chin-Tan [Department of Electronic Engineering, National Quemoy University, 1 Daxue Road, Jinning Township, Kinmen 89250, Taiwan, ROC (China); Zhao, Yu-Xiang [Department of Computer Science and Information Engineering, National Quemoy University, Taiwan, ROC (China); Chang, Julian; Yang, Shu-Yi [Department of Applied English, National Quemoy University, Taiwan, ROC (China); Han, Sheng, E-mail: shenghan@nutc.edu.tw [Center for General Education, National Taichung University of Science and Technology, 129 San-min Road, Section 3, Taichung 40401, Taiwan, ROC (China)

    2016-08-15

    Highlights: • TiO{sub 2}/TiWO{sub x} films were fabricated by a bipolar pulsed magnetron sputtering apparatus. • Titanium oxide being sputtered tungsten enhanced the highly oriented of TiO{sub 2} (1 0 1) plane of the specimen assemblies. • The mechanism WO{sub 3}(h{sup +}, e{sup −})/TiO{sub 2}(h{sup +}, e{sup −}) → WO{sub 3}(e{sup −})/TiO{sub 2}(h{sup +}) shows the higher hydrophilicity and lower contact angle. - Abstract: Titanium oxide films were formed by sputtering and then TiWO{sub x} films were deposited by bipolar pulsed magnetron sputtering with pure titanium and tungsten metal targets. The sputtering of titanium oxide with tungsten enhanced the orientation of the TiO{sub 2} (1 0 1) plane of the specimen assemblies. The main varying parameter was the tungsten pulse power. Titanium oxide sputtered with tungsten using a pulsing power of 50 W exhibited a superior hydrophilic property, and a contact angle of 13.1°. This fabrication conditions maximized the photocatalytic decomposition of methylene blue solution. The mechanism by which the titanium oxide was sputtered with tungsten involves the photogeneration of holes and electron traps, inhibiting the hole–electron recombination, enhancing hydrophilicity and reducing the contact angle.

  3. Contributions of solar-wind induced potential sputtering to the lunar surface erosion rate and it's exosphere

    Science.gov (United States)

    Alnussirat, S. T.; Barghouty, A. F.; Edmunson, J. E.; Sabra, M. S.; Rickman, D. L.

    2018-04-01

    Sputtering of lunar regolith by solar-wind protons and heavy ions with kinetic energies of about 1 keV/amu is an important erosive process that affects the lunar surface and exosphere. It plays an important role in changing the chemical composition and thickness of the surface layer, and in introducing material into the exosphere. Kinetic sputtering is well modeled and understood, but understanding of mechanisms of potential sputtering has lagged behind. In this study we differentiate the contributions of potential sputtering from the standard (kinetic) sputtering in changing the chemical composition and erosion rate of the lunar surface. Also we study the contribution of potential sputtering in developing the lunar exosphere. Our results show that potential sputtering enhances the total characteristic sputtering erosion rate by about 44%, and reduces sputtering time scales by the same amount. Potential sputtering also introduces more material into the lunar exosphere.

  4. 3-D simulation study for a thermionic RF gun using an FDTD method

    Energy Technology Data Exchange (ETDEWEB)

    Hama, H. E-mail: hama@lns.tohoku.ac.jp; Hinode, F.; Shinto, K.; Miyamoto, A.; Tanaka, T

    2004-08-01

    Beam dynamics in a thermionic RF gun for a new pre-injector in a future synchrotron radiation facility at Tohoku university has been studied by developing a 3-D Maxwell's equation solver. Backbombardment (BB) effect on a cathode, which is a crucial problem for performance of the thermionic RF gun, has been investigated. It is found that an external dipole magnetic field applying around the cathode is effective to reduce high-energy backstreaming electrons from the accelerating cell. However, the low-energy electrons coming back from the first cell inevitably hit the cathode, so that characteristics of the cathode material seems to be crucial for reduction of the BB effect.

  5. Dependence of energy per molecule on sputtering yields with reactive gas cluster ions

    International Nuclear Information System (INIS)

    Toyoda, Noriaki; Yamada, Isao

    2010-01-01

    Gas cluster ions show dense energy deposition on a target surface, which result in the enhancement of chemical reactions. In reactive sputtering with gas cluster ions, the energy per atom or molecule plays an important role. In this study, the average cluster size (N, the number of atoms or molecules in a cluster ion) was controlled; thereby the dependences of the energy per molecule on the sputtering yields of carbon by CO 2 cluster ions and that of Si by SF 6 /Ar mixed gas cluster ions were investigated. Large CO 2 cluster ions with energy per molecule of 1 eV showed high reactive sputtering yield of an amorphous carbon film. However, these ions did not cause the formation of large craters on a graphite surface. It is possible to achieve very low damage etching by controlling the energy per molecule of reactive cluster ions. Further, in the case of SF 6 /Ar mixed cluster ions, it was found that reactive sputtering was enhanced when a small amount of SF 6 gas (∼10%) was mixed with Ar. The reactive sputtering yield of Si by one SF 6 molecule linearly increased with the energy per molecule.

  6. A thermionic energy converter with a molybdenum-alumina cermet emitter

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.

    1990-01-01

    A study is made of the properties of cermets as electrode materials for thermionic energy converters. For thermodynamic reasons it is expected that all cermets composed of pure Mo and refractory oxides have the same bare work function. From data on the work function of Mo in an oxygen atmosphere

  7. Silver nanoparticles deposited on anodic aluminum oxide template using magnetron sputtering for surface-enhanced Raman scattering substrate

    Energy Technology Data Exchange (ETDEWEB)

    Wong-ek, Krongkamol [Nanoscience and Technology Program, Chulalongkorn University, Bangkok 10330 (Thailand); Eiamchai, Pitak; Horprathum, Mati; Patthanasettakul, Viyapol [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Limnonthakul, Puenisara [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); Chindaudom, Pongpan [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand); Nuntawong, Noppadon, E-mail: noppadon.nuntawong@nectec.or.t [National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Rd., Klong Luang, Pathumthani 12120 (Thailand)

    2010-09-30

    Low-cost and highly sensitive surface-enhanced Raman scattering (SERS) substrates have been fabricated by a simple anodizing process and a magnetron sputtering deposition. The substrates, which consist of silver nanoparticles embedded on anodic aluminum oxide (AAO) templates, are investigated by a scanning electron microscope and a confocal Raman spectroscopy. The SERS activities are demonstrated by Raman scattering from adsorbed solutions of methylene blue and pyridine on the SERS substrate surface. The most optimized SERS substrate contains the silver nanoparticles, with a size distribution of 10-30 nm, deposited on the AAO template. From a calculation, the SERS enhancement factor is as high as 8.5 x 10{sup 7}, which suggests strong potentials for direct applications in the chemical detection and analyses.

  8. Control for nuclear thermionic power source

    International Nuclear Information System (INIS)

    Fletcher, J.C.; Sawyer, C.D.

    1978-01-01

    A control for a power source is described which includes nuclear fuel interspersed with thermionic converters, including a power regulator that maintains a substantially constant output voltage to a variable load, and a control circuit that drives a neutron flux regulator in accordance with the current supplied to the power regulator and the neutron flux density in the region of the converters. The control circuit generates a control signal which is the difference between the neutron flux density and a linear fucntion of the current, and which drives the neutron regulator in a direction to decrease or increase the neutron flux according to the polarity of the control signal

  9. Development of integrated thermionic circuits for high-temperature applications

    International Nuclear Information System (INIS)

    McCormick, J.B.; Wilde, D.; Depp, S.; Hamilton, D.J.; Kerwin, W.; Derouin, C.; Roybal, L.; Dooley, R.

    1981-01-01

    A class of devices known as integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500 0 C is described. The evolution of the ITC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500 0 C environments for extended periods of time

  10. Design study on an independently-tunable-cells thermionic RF gun

    International Nuclear Information System (INIS)

    Hama, H.; Tanaka, T.; Hinode, F.; Kawai, M.

    2006-01-01

    Characteristics of a thermionic RF gun have been studied by a 3-D simulation code developed using an FDTD (Finite Difference Time Domain) method as a Maxwell's equations solver. The gun is consists of two independent power feeding cavities, so that we call it independently-tunable-cells (ITC)'-RF gun. The first cell is the cathode cell and the second one is an accelerating cell. The ITC gun can be operated at various modes of different RF-power ratio and phase between two cavities. Simulation study shows a velocity-bunching like effect may be occurred in the gun, so that the short pulse beam from the thermionic RF gun is a better candidate to produce the coherent THz synchrotron radiation. Expected bunch length with a total charge of ∼20 pC (1% energy width from the top energy) is around 200 fs (fwhm). Even the beam energy extracted from the gun is varied by which the input powers are changed, almost same shape of the longitudinal phase space can be produced by tuning the phase. (author)

  11. Work function and surface stability of tungsten-based thermionic electron emission cathodes

    Science.gov (United States)

    Jacobs, Ryan; Morgan, Dane; Booske, John

    2017-11-01

    Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

  12. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    International Nuclear Information System (INIS)

    Li Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

  13. A thermionic energy converter with A molybdenum alumina cermet emitter

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.; Yogi Goswami, D.

    1988-01-01

    The I-V characteristics of a thermionic converter equipped with a Mo-1w/o AI203 emitter and a Mo collector were measured. The conditions were varied over a limited range without, as well as with Cs. Work functions of Mo as well as Mo-1w/o AI203 were determined. Measurements were carried out in a

  14. System modeling and reactor design studies of the Advanced Thermionic Initiative space nuclear reactor

    International Nuclear Information System (INIS)

    Lee, H.H.; Abdul-Hamid, S.; Klein, A.C.

    1996-01-01

    In-core thermionic space reactor design concepts that operate at a nominal power output range of 20 to 50 kW(electric) are described. Details of the neutronic, thermionic, thermal hydraulics, and shielding performance are presented. Because of the strong absorption of thermal neutrons by natural tungsten and the large amount of natural tungsten within the reactor core, two designs are considered. An overall system design code has been developed at Oregon State University to model advanced in-core thermionic energy conversion-based nuclear reactor systems for space applications. The results show that the driverless single-cell Advanced Thermionic Initiative (ATI) configuration, which does not have driver fuel rods, proved to be more efficient than the driven core, which has driver rods. The results also show that the inclusion of the true axial and radial power distribution decrease the overall conversion efficiency. The flattening of the radial power distribution by three different methods would lead to a higher efficiency. The results show that only one TFE works at the optimum emitter temperature; all other TFEs are off the optimum performance and result in a 40% decrease of the efficiency of the overall system. The true axial profile is significantly different as there is a considerable amount of neutron leakage out of the top and bottom of the reactor. The analysis reveals that the axial power profile actually has a chopped cosine shape. For this axial profile, the reactor core overall efficiency for the driverless ATI reactor version is found to be 5.84% with a total electrical power of 21.92 kW(electric). By considering the true axial power profile instead of the uniform power profile, each TFE loses ∼80 W(electric)

  15. Highly aligned carbon nanotube arrays fabricated by bias sputtering

    International Nuclear Information System (INIS)

    Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system

  16. Communication: IR spectroscopy of neutral transition metal clusters through thermionic emission

    NARCIS (Netherlands)

    Lapoutre, V. J. F.; Haertelt, M.; Meijer, G.; Fielicke, A.; Bakker, J. M.

    2013-01-01

    The resonant multiple photon excitation of neutral niobium clusters using tunable infrared (IR) radiation leads to thermionic emission. By measuring the mass-resolved ionization yield as a function of IR wavenumber species selective IR spectra are obtained for Nb-n (n = 5-20) over the 200-350 cm(-1)

  17. Sputtering of water ice

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

  18. Electronic sputtering

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1989-01-01

    Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

  19. Serial co-sputtering. Development of a versatile coating technology and its characterization using the example of rate enhancement of metal oxides by co-doping; Serielles Co-Sputtern. Entwicklung einer flexiblen Beschichtungstechnologie und deren Charakterisierung am Beispiel der Ratenerhoehung von Metalloxiden durch Co-Dotierung

    Energy Technology Data Exchange (ETDEWEB)

    Austgen, Michael

    2011-09-19

    Focus of this work is the design and characterization of a versatile coating system based on magnetron sputter deposition. This technology consists of a rotary target (primary target) that will be sputtered at one position and also can be coated at a different position with a secondary material by another sputter process. This simultaneous operation and the serial order of two sputter processes is the serial co-sputter process. A highly elaborated gas separation allows the operation of the primary sputter process in a reactive gas atmosphere whereas the secondary process can be driven in a non-reactive atmosphere. Compared to conventional co-sputtering the gas separation enables a stable operation of the secondary sputter process even if reactive gas is added to the primary sputter process. To develop an understanding of the process dynamics of serial co-sputtering the rate enhancement of metal oxides by co-doping with heavy atoms has been investigated first. If heavy elements are added to the target material the collision cascades can be reflected back towards the target surface by a more efficient momentum transfer and therefore increase the sputtering rate. The addition of heavy atoms can be achieved by serial co-sputtering. In the secondary sputter process the heavy element will be sputter deposited onto the rotary target. When entering the erosion zone of the primary sputter process the heavy atoms will be partially sputtered away and partially recoil implanted beneath the target surface. The later will contribute to the sputter yield amplification effect described above. In this work the sputter yield amplification effect has been investigated for the metal oxides Al{sub 2}O{sub 3} and TiO{sub 2} by co-doping of a aluminum and titanium rotary target with the heavy element tungsten (Z=74) and bismuth (Z=83). The primary process variables are the O{sub 2}-gas flow which determines the working point of the primary sputtering process, the rotation speed of the

  20. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  1. Beam emittance measurement from CERN thermionic guns

    International Nuclear Information System (INIS)

    Kester, O.; Rao, R.; Rinolfi, L.

    1992-01-01

    In the LEP Injector Linacs (LIL) a thermionic gun provides electron beams with different peak intensities at an energy of 80 keV. The beam emittances were estimated from the EGUN programme. Since the gun is of triode type, the main contribution to the emittance comes from the grid. The simulation programme does not model the real geometry by assuming a cylindrical symmetry, while the grid does not have such symmetry. A Gun Test Facility (GTF), allowing emittance measurements, based on the 3-gradients-method was installed. The experimental results are presented. (author) 6 refs.; 6 figs

  2. High power impulse magnetron sputtering and its applications

    Science.gov (United States)

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  3. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    Brooks, J.N.; Ruzic, D.N.

    1990-01-01

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  4. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  5. Small ex-core heat pipe thermionic reactor concept (SEHPTR)

    International Nuclear Information System (INIS)

    Jacox, M.G.; Bennett, R.G.; Lundberg, L.B.; Miller, B.G.; Drexler, R.L.

    1991-01-01

    The Idaho National Engineering Laboratory (INEL) has developed an innovative space nuclear power concept with unique features and significant advantages for both Defense and Civilian space missions. The Small Ex-core Heat Pipe Thermionic Reactor (SEHPTR) concept was developed in response to Air Force needs for space nuclear power in the range of 10 to 40 kilowatts. This paper describes the SEHPTR concept and discusses the key technical issues and advantages of such a system

  6. Solid-State Thermionic Nuclear Power for Megawatt Propulsion, Planetary Surface and Commercial Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Thermionic (TI) power conversion is a promising technology first investigated for power conversion in the 1960’s, and of renewed interest due to modern...

  7. X-ray Diffraction Studies of the Structure and Thermochemistry of Alkaline-Earth Oxide-Coated Thermionic Cathodes

    Science.gov (United States)

    Karikari, E. K.; Bassey, E.; Wintucky, Edwin G.

    1998-01-01

    NASA LeRC has a broad, active cathode technology development program in which both experimental and theoretical studies are being employed to further development of thermionic cathodes for use as electron sources in vacuum devices for communications and other space applications. One important type of thermionic cathode under development is the alkaline-earth oxide-coated (BaO, SrO, CaO) cathode. Significant improvements in the emission characteristics of this cathode have been obtained through modification of the chemical composition and morphology of the oxide coating, with the best result thus far coming from the addition of In2O3 and Sc2O3. Whereas the In2O3 produces a finer, more uniform particle structure, the exact chemical state and role of the Sc2O3 in the emission enhancement is unknown. The purpose of this cooperative agreement is to combine the studies of the surface chemistry and electron emission at NASA LeRC of chemically modified oxide coatings with a study of the thermochemistry and crystal structure using X-ray diffraction equipment and expertise at Clark Atlanta University (CAU). The study at CAU is intended to provide the description and understanding of the structure and thermochemistry needed for further improvement and optimization of the modified coatings. A description of the experimental procedure, preliminary X-ray diffraction test results, together with the design of an ultrahigh vacuum chamber necessary for high temperature thermochemistry studies will be presented.

  8. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  9. Thermionic Properties of Carbon Based Nanomaterials Produced by Microhollow Cathode PECVD

    Science.gov (United States)

    Haase, John R.; Wolinksy, Jason J.; Bailey, Paul S.; George, Jeffrey A.; Go, David B.

    2015-01-01

    Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon-based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.

  10. Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

    International Nuclear Information System (INIS)

    Meyer, Fred W.; Harris, Peter R.; Taylor, C.N.; Meyer, Harry M. III; Barghouty, N.; Adams, J. Jr.

    2011-01-01

    We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have higher physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.

  11. Kinetic and Potential Sputtering Enhancements of Lunar Regolith Erosion: The Contribution of the Heavy Multicharged (Minority) Solar Wind Constituents

    Science.gov (United States)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    We report preliminary results for H+, Ar+1, Ar+6 and Ar+9 ion sputtering of JSC-1A lunar regolith simulant at solar wind velocities, obtain ed at the ORNL Multicharged Ion Research Facility using quadrupole ma ss spectrometry. The multi-charged Ar ions were used as proxies for i ntermediate mass solar wind multicharged ions. Prior to the Ar beam e xposures, the sample was exposed to high fluence H+ irradiation to si mulate H-loading due to the dominant solar wind constituent. A x80 en hancement of oxygen sputtering by Ar+ over same velocity H+ was measu red and an additional x2 increase for Ar+9 over same velocity Ar+ was demonstrated, giving clear evidence of the importance of potential s puttering by multicharged ions. This enhancement was observed to pers ist to the maximum fluences investigated (approx 10(exp 16)/sq cm). As discussed in a companion abstract by N. Barghouty, such persistent s puttering enhancement has significant implications on weathering and aging of lunar regolith. In addition, XPS measurements showed strong evidence of Fe reduction for those target areas that had been exposed to high fluence Ar+ and Ar+8 beams. Preferential oxidation of the Fe -reduced beam-exposed regions during transfer to the XPS system led t o enhanced O concentrations in those regions as well. On the basis of these very promising preliminary results, a NASA-LASER project on mo re extensive measurements was recently selected for funding. The prop osal expands the collaboration with NASA-MSFC for the simulation effort, and adds a new collaboration with NASA-GSFC for lunar mission-rele vant measurements.

  12. Advantages and implications of U233 fueled thermionic space power energy conversion

    International Nuclear Information System (INIS)

    Terrell, C.W.

    1992-01-01

    In this paper two recent analyses are reported which demonstrate advantages of a U233 fueled thermionic fuel element (TFE) compared to 93 w/o U235, and that application (mission) has broad latitude in how space power reactor systems could or should be optimized. A reference thermionic reactor system was selected to provide the basis for the fuel comparisons. Both oxide and metal fuel forms were compared. Of special interest was to estimate the efficiencies of the four fuel forms to produce electrical power. A figure of merit (FOM) was defined which is directly proportional to the electrical average electrical power produced is proportional to the electrical power produced per unit uranium mass. In a TFE the average electrical power produced is proportional to the emitter surface area (Esa), hence the ratio Esa/Mu was selected as the FOM. Results indicate that the choice of fuel type and form leads to wide variations in critical and system masses FOM values, and system total power

  13. Plasma properties of RF magnetron sputtering system using Zn target

    Energy Technology Data Exchange (ETDEWEB)

    Nafarizal, N.; Andreas Albert, A. R.; Sharifah Amirah, A. S.; Salwa, O.; Riyaz Ahmad, M. A. [Microelectronic and Nanotechnology - Shamsuddin Research Centre (MiNT-SRC), Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia 86400 Parit Raja, Batu Pahat, Johor (Malaysia)

    2012-06-29

    In the present work, we investigate the fundamental properties of magnetron sputtering plasma using Zn target and its deposited Zn thin film. The magnetron sputtering plasma was produced using radio frequency (RF) power supply and Argon (Ar) as ambient gas. A Langmuir probe was used to collect the current from the plasma and from the current intensity, we calculate the electron density and electron temperature. The properties of Zn sputtering plasma at various discharge conditions were studied. At the RF power ranging from 20 to 100 W and gas pressure 5 mTorr, we found that the electron temperature was almost unchanged between 2-2.5 eV. On the other hand, the electron temperature increased drastically from 6 Multiplication-Sign 10{sup 9} to 1 Multiplication-Sign 10{sup 10}cm{sup -3} when the discharge gas pressure increased from 5 to 10 mTorr. The electron microscope images show that the grain size of Zn thin film increase when the discharge power is increased. This may be due to the enhancement of plasma density and sputtered Zn density.

  14. Nano-textured W shows improvement of thermionic emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Barmina, E.V.; Serkov, A.A.; Shafeev, G.A. [General Physics Institute of the Russian Academy of Sciences, Wave Research Center of A.M. Prokhorov, Moscow (Russian Federation); Stratakis, E. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Materials Science and Technology Department, Heraklion (Greece); Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Physics Department, Heraklion (Greece); Stolyarov, V.N.; Stolyarov, I.N. [Roentgenprom, Protvino, Moscow (Russian Federation)

    2012-01-15

    Laser-assisted nano-texturing of W substrates cathodes via ablation in liquid environment is experimentally realized. Two laser sources are used, either a Ti:sapphire femtosecond laser or a Nd:YAG laser with pulse duration of 350 ps. Laser exposure of W results in the formation of hemi-spherical nanostructures situated on top of periodic ripples. Nano-textured thermionic W cathode demonstrates the decrease of the efficient work function by 0.3 eV compared to pristine surface. (orig.)

  15. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  16. Current transmission and nonlinear effects in un-gated thermionic cathode RF guns

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P. [Fermilab; Harris, J. R. [Air Force Weapons Lab

    2017-05-03

    Un-gated thermionic cathode RF guns are well known as a robust source of electrons for many accelerator applications. These sources are in principle scalable to high currents without degradation of the transverse emittance due to control grids but they are also known for being limited by back-bombardment. While back-bombardment presents a significant limitation, there is still a lack of general understanding on how emission over the whole RF period will affect the nature of the beams produced from these guns. In order to improve our understanding of how these guns can be used in general we develop analytical models that predict the transmission efficiency as a function of the design parameters, study how bunch compression and emission enhancement caused by Schottky barrier lowering affect the output current profile in the gun, and study the onset of space-charge limited effects and the resultant virtual cathode formation leading to a modulation in the output current distribution.

  17. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  18. Enhanced electrical properties of AZO thin films grown on different substrates by using a facing-target sputtering system with hetero targets

    Science.gov (United States)

    Lee, ChangHyun; Bae, Kang; Jin, IkHyeon; Kim, HwaMin; Sohn, SunYoung

    2015-09-01

    Al-doped ZnO (AZO) films were deposited on glass, polyethylene naphthalate (PEN) and polyethylene terephthalate (PET) at room temperature by using conventional rf-magneton sputtering (CMS) and a facing-target sputtering (FTS) with hetero targets of Al2O3 and ZnO. Their structural, surface morphology, electrical and optical properties were characterized by using X-ray diffractometry (XRD), atomic force microscopy (AFM), Hall-effect measurement and ultravioletvisible spectrophotometry, respectively. The films exhibit highly c-axis preferred orientation and a closely packed nanocrystalline. Structure the FTS-films deposited on plastic substrate are found to receive much less stress due to bombardment of high-energy particles compress to the CMS-films deposited on plastic substrates, during the sputtering process, which can enhance the electrical properties and crystalline quality of the FTS-films compared with those of the CMS-films. The resistivities of the FTS-films are 6.50 × 10-4 Ω·cm on glass, 7.0 × 10-4 Ω·cm on PEN and 7.4 × 10-4 Ω·cm on PET while the values for the CMS-films are 7.6 × 10-4 Ω·cm on glass, 1.20 × 10-3 Ω·cm on PEN and 1.58 × 10-3 Ω·cm on PET.

  19. Thermionic system evaluation test (TSET) facility construction: A United States and Russian effort

    International Nuclear Information System (INIS)

    Wold, S.K.

    1993-01-01

    The Thermionic System Evaluation Test (TSET) is a ground test of an unfueled Russian TOPAZ-II in-core thermionic space reactor powered by electric heaters. The facility that will be used for testing of the TOPAZ-II systems is located at the New Mexico Engineering Research Institute (NMERI) complex in Albuquerque, NM. The reassembly of the Russian test equipment is the responsibility of International Scientific Products (ISP), a San Jose, CA, company and Inertek, a Russian corporation, with support provided by engineers and technicians from Phillips Laboratory (PL), Sandia National Laboratories (SNL), Los Alamos National Laboratory (LANL), and the University of New Mexico (UNM). This test is the first test to be performed under the New Mexico Strategic Alliance agreement. This alliance consists of the PL, SNL, LANL, and UNM. The testing is being funded by the Strategic Defense Initiative Organization (SDIO) with the PL responsible for project execution

  20. Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

    2012-01-01

    Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

  1. Sputtering of solid deuterium by He-ions

    DEFF Research Database (Denmark)

    Schou, Jørgen; Stenum, B.; Pedrys, R.

    2001-01-01

    Sputtering of solid deuterium by bombardment of 3He+ and 4He+ ions was studied. Some features are similar to hydrogen ion bombardment of solid deuterium, but for the He-ions a significant contribution of elastic processes to the total yield can be identified. The thin-film enhancement is more pro...... pronounced than that for hydrogen projectiles in the same energy range....

  2. Ti-Al-Si-C-N hard coatings synthesized by hybrid arc enhanced magnetron sputtering

    International Nuclear Information System (INIS)

    Wu, Guizhi; Liu, Sitao; Ma, Shengli; Xu, Kewei; Vincent, Ji; Chu, Paul K.

    2010-01-01

    Ti-Al-Si-C-N coatings are deposited by hybrid arc-enhanced magnetic sputtering and characterized by various micro- and macro-tools. X-ray diffraction, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy reveal that the coatings are nanocomposites consisting of nanocrystallites and amorphous phases. They are generally in the form of nc-(Ti,Al)(C,N)/a-Si_3N_4/a-C depending on the composition of the coatings. With increasing Al concentrations, the X-ray diffraction peaks shift to a lower angle indicating compressive stress in the coatings. The measured hardness also diminishes implying reduced contributions from the self-organized stable nanostructure. The dry friction coefficients of the Ti-Al-Si-C-N coatings are found to be about 0.3 which is lower than that of conventional Ti-Si-N coatings. These coatings can find potential applications requiring high temperature with heavy contact loading. (author)

  3. Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

    Science.gov (United States)

    Stark, C. R.; Diver, D. A.

    2018-04-01

    Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aim. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods: Using example sub-stellar atmospheres from DRIFT-PHOENIX, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results: Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is ≳10-4. Loosely bound grains with surface binding energies of the order of 0.1-1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions: The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

  4. A high-brightness thermionic microwave electron gun

    Energy Technology Data Exchange (ETDEWEB)

    Borland, Michael [Stanford Univ., CA (United States)

    1991-02-01

    In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun`s performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ``State-of-the-art`` microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of < 10 π • mec • μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 109e- per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically < 30 π • me • μm.

  5. A high-brightness thermionic microwave electron gun

    International Nuclear Information System (INIS)

    Borland, M.

    1991-02-01

    In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun's performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ''State-of-the-art'' microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of e c · μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 10 9 e - per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically e · μm

  6. Fermi level splitting and thermionic current improvement in low-dimensional multi-quantum-well (MQW) p-i-n structures

    International Nuclear Information System (INIS)

    Varonides, Argyrios C.

    2006-01-01

    Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents

  7. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi

    1994-01-01

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  8. On the control of deposition process for enhanced mechanical properties of nc-TiC/a-C: H coatings with DC magnetron sputtering at low or high ion flux

    Czech Academy of Sciences Publication Activity Database

    Souček, P.; Schmidtová, T.; Zábranský, L.; Buršíková, V.; Vašina, P.; Caha, O.; Buršík, Jiří; Peřina, Vratislav; Mikšová, Romana; Pei, Y.; de Hosson, J. T. M.

    Roč. 255, 25 September (2014), s. 8-14 ISSN 0257-8972 Institutional support: RVO:68081723 ; RVO:61389005 Keywords : enhanced mechanical properties * ion flux on the substrate * magnetron sputtering Subject RIV: BL - Plasma and Gas Discharge Physics Impact factor: 1.998, year: 2014

  9. The statistics of sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1993-01-01

    The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

  10. Formation and stability of sputtered clusters

    International Nuclear Information System (INIS)

    Andersen, H.H.

    1989-01-01

    Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

  11. Study of the chemical sputtering in Tore-Supra

    International Nuclear Information System (INIS)

    Cambe, A.

    2002-01-01

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C 2 D x and C 3 D y ) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD 4 (Y CD4 ) is highly flux (φ) dependent, showing a variation of the form: Y CD4 ∝ φ -0.23 . The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y CD4 . The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

  12. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Z.L.

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

  13. Numerical simulations of the thermionic electron gun for electron-beam welding and micromachining

    Czech Academy of Sciences Publication Activity Database

    Jánský, Pavel; Zlámal, J.; Lencová, Bohumila; Zobač, Martin; Vlček, Ivan; Radlička, Tomáš

    2009-01-01

    Roč. 84, č. 2 (2009), s. 357-362 ISSN 0042-207X R&D Projects: GA AV ČR IAA100650805 Institutional research plan: CEZ:AV0Z20650511 Keywords : Numerical simulation * Thermionic emission * Electron gun Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.975, year: 2009

  14. Simple model for the description of a thermionic Cs diode in operation

    International Nuclear Information System (INIS)

    Tschersich, K.G.

    1975-01-01

    Because of the small voltage loss in the space between the electrodes, Cs is the most common work medium in thermionic diodes. With the model calculations of the processes in the space between the electrodes, the author aims to explain the formation of Cs ions and the current transport through the electrode gap at these low voltages. (RW/AK) [de

  15. Measures to alleviate the back bombardment effect of thermionic rf electron gun

    International Nuclear Information System (INIS)

    Huang, Y.; Xie, J.

    1991-01-01

    Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

  16. Fracture-resistant ultralloys for space-power systems: nuclear-thermionic-conversion implications of W,27Re

    International Nuclear Information System (INIS)

    Moraga, N.O.; Jacobsen, D.L.; Morris, J.F.

    1989-01-01

    Rhenium (Re) added to tungsten (W) improves the creep strength, recrystallization resistance and ductility. W,27Re is a good workable ultra alloy for use in space nuclear reactor (SNR) systems and perhaps its most practical processing procedure is sintering. A promising SNR application for such ultralloys is very-high-temperature thermionic energy conversion. Therefore determinations of thermionic and thermal emissive characteristics for sintered W,27Re at temperatures near and above 2000 K in hard vacuum enable both scientific and pragmatic progress. Such research results comprise the data and interpretive presentations in this paper. These findings emphasize the fallacy of characterizing ultralloys similar to W,27Re with single-valued thermophysicochemical properties - such as the work function. They further stress the necessity for investigations of this type to determine and demonstrate effective prototypic ultralloy compositions and processing methods. (author)

  17. Reactive sputtering of TiN films at large substrate to target distances

    International Nuclear Information System (INIS)

    Musil, J.; Kadlec, S.

    1990-01-01

    This paper is a critical review of the present status of the magnetron ion sputter plating of thin CiN films. Thus different possibilities of extracting high ion currents 1 s from the magnetron discharge to substrates located not only at standard target to substrate distances d S-T of about 50 mm but also at larger distances d S-T are discussed in detail. Special attention is devoted to magnetron sputtering systems with enhanced ionization, to plasma confinement in the magnetron sputtering systems and to the discharge characteristics of an unbalanced magnetron (UM). It is shown that a UM can be operated in the regime of a double-site-sustained discharge (DSSD) and in this case large 1 s can be extracted to substrates located in large D S-T of about 200 mm and even at high pressures p = 5 Pa. A physical comparison of the conventional magnetron (CM), UM and DSSD is also given. Considerable attention is also devoted to the effect of ion bombardment on properties of TiN films created in the sputtering system using DSSD. (author)

  18. Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

    Science.gov (United States)

    Trushin, Maxim

    2018-04-01

    The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

  19. Development of Kabila rocket: A radioisotope heated thermionic plasma rocket engine

    Directory of Open Access Journals (Sweden)

    Kalomba Mboyi

    2015-04-01

    Full Text Available A new type of plasma rocket engine, the Kabila rocket, using a radioisotope heated thermionic heating chamber instead of a conventional combustion chamber or catalyst bed is introduced and it achieves specific impulses similar to the ones of conventional solid and bipropellant rockets. Curium-244 is chosen as a radioisotope heat source and a thermal reductive layer is also used to obtain precise thermionic emissions. The self-sufficiency principle is applied by simultaneously heating up the emitting material with the radioisotope decay heat and by powering the different valves of the plasma rocket engine with the same radioisotope decay heat using a radioisotope thermoelectric generator. This rocket engine is then benchmarked against a 1 N hydrazine thruster configuration operated on one of the Pleiades-HR-1 constellation spacecraft. A maximal specific impulse and power saving of respectively 529 s and 32% are achieved with helium as propellant. Its advantages are its power saving capability, high specific impulses and simultaneous ease of storage and restart. It can however be extremely voluminous and potentially hazardous. The Kabila rocket is found to bring great benefits to the existing spacecraft and further research should optimize its geometric characteristics and investigate the physical principals of its operation.

  20. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  1. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

    1979-01-01

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

  2. Nano-scale investigations of electric-dipole-layer enhanced field and thermionic emission from high current density cathodes

    Science.gov (United States)

    Vlahos, Vasilios

    Cesium iodide coated graphitic fibers and scandate cathodes are two important electron emission technologies. The coated fibers are utilized as field emitters for high power microwave sources. The scandate cathodes are promising thermionic cathode materials for pulsed power vacuum electron devices. This work attempts to understand the fundamental physical and chemical relationships between the atomic structure of the emitting cathode surfaces and the superior emission characteristics of these cathodes. Ab initio computational modeling in conjunction with experimental investigations was performed on coated fiber cathodes to understand the origin of their very low turn on electric field, which can be reduced by as much as ten-fold compared to uncoated fibers. Copious amounts of cesium and oxygen were found co-localized on the fiber, but no iodine was detected on the surface. Additional ab initio studies confirmed that cesium oxide dimers could lower the work function significantly. Surface cesium oxide dipoles are therefore proposed as the source of the observed reduction in the turn on electric field. It is also proposed that emission may be further enhanced by secondary electrons from cesium oxide during operation. Thermal conditioning of the coated cathode may be a mechanism by which surface cesium iodide is converted into cesium oxide, promoting the depletion of iodine by formation of volatile gas. Ab initio modeling was also utilized to investigate the stability and work functions of scandate structures. The work demonstrated that monolayer barium-scandium-oxygen surface structures on tungsten can dramatically lower the work function of the underlying tungsten substrate from 4.6 eV down to 1.16 eV, by the formation of multiple surface dipoles. On the basis of this work, we conclude that high temperature kinetics force conventional dispenser cathodes (barium-oxygen monolayers on tungsten) to operate in a non-equilibrium compositional steady state with higher than

  3. Nuclear thermionic power plant integration problems

    International Nuclear Information System (INIS)

    Fraas, A.P.

    1967-02-01

    The numerous boundary conditions to be met in preparing a well proportioned, properly integrated design for a thermionic cell reactor are discussed with the emphasis on materials and fabrication problems. Pertinent experience with fuel elements, tube header sheets, electric heaters, and pressure vessels is cited to highlight key limitations that have been encountered in structurally similar equipment. A reference design is presented to indicate how one might attempt to satisfy all of the many boundary conditions. The study indicates that it will be difficult to get a reactor core power density greater than about 35 w/cm 3 and that, while it is possible to minimize the ill effects of failures within individual cells by employing series-parallel connections, the study further indicates that there is inherently a high probability of leaks and electrical shorts and arcs within the reactor so that it is doubtful that good reliability can be obtained

  4. Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

    Directory of Open Access Journals (Sweden)

    Bogdanov R.V.

    2015-03-01

    Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

  5. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  6. Simulation experiments and solar wind sputtering

    International Nuclear Information System (INIS)

    Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

    1978-01-01

    In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

  7. Deuterium sputtering of Li and Li-O films

    Science.gov (United States)

    Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

    2017-10-01

    Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

  8. Thermal conductivities of thin, sputtered optical films

    International Nuclear Information System (INIS)

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO 2 /Si 3 N 4 ) n and Al(Al 2 O 3 /AIN) n . Sputtered films of more conventional materials like SiO 2 , Al 2 O 3 , Ta 2 O 5 , Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented

  9. Tungsten self-sputtering yield with different incidence angles and target temperatures

    International Nuclear Information System (INIS)

    Bandourko, V.; Nakamura, K.; Akiba, M.; Jimbou, R.

    1998-01-01

    The self-sputtering of different types of tungsten due to 1 keV W + bombardment at temperatures of 25 C and 600 C and incident angles in the range of 30-60 was studied by means of the weight loss method. The experimental data at room temperature agreed reasonably with the results of TRIM calculations. Enhanced self-sputtering yields due to beam-induced desorption of WO 2 were found at a temperature of 600 C. The weight loss of W-Cu composite is larger than that of the CVD-W and ps-W under the same irradiation conditions due to the selective removal of copper. (orig.)

  10. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  11. Prospects for the use of thermionic nuclear power plants for interorbital transfers of space vehicles in near space

    International Nuclear Information System (INIS)

    Andreev, P.V.; Zhabotinskii, E.E.; Nikonov, A.M.

    1993-01-01

    In a previous study the authors considered the use of thermionic nuclear power plants with a thermal reactor for interorbital transfers of space vehicles by electrojet propulsion systems (EJPSs), opening up broad prospects for putting payloads into a high orbit with relatively inexpensive means for a launch into a reference orbit, e.g., the Proton launch vehicle. This is of major importance for the commercial use of space technology, in particular, for erecting technological platforms for the production of various materials. In the work reported here the authors continue the study of interorbital transfers and explore the potentialities of thermionic NPPs with a thermal reactor and with a fast reactor. In boosted operation the electrical power of the latter may reach several hundred kilowatts. What type of NPP is desirable for testing an electrojet propulsion system in interorbital transfers from a reference orbit to a high orbit, providing that the time is limited, depends on the class of the launch vehicle characterized by the mass M o that the vehicle can carry into the reference orbit, where radiation safety conditions allow the NPP to be started up. Results of studies are presented that give an idea of the rational choice of type of thermionic NPP for the organization in interorbital transfers

  12. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  13. Isotopic Thermionic Generator; Generateur thermoionique isotopique

    Energy Technology Data Exchange (ETDEWEB)

    Clemot, M; Devin, B; Durand, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1967-07-01

    This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [French] Ce rapport decrit la structure d'un generateur spatial d'electricite a conversion directe du type thermoionique. La source d'energie est un radioisotope. Deux isotopes sont envisages: le Pu 238 et le Cm 244. Le systeme comporte pour l'emetteur un caloduc concentreur de flux thermique et pour le collecteur, un caloduc evacuateur vers l'enveloppe du generateur utilise, en panneau rayonnant. Les calculs ont ete conduits dans le cas particulier d'une puissance convertie de 100 watts electriques. (auteurs)

  14. Thermionic detection of the ionic fragments of continiuum-state pair absorption systems

    International Nuclear Information System (INIS)

    Hotop, R.; Niemax, K.; Richter, J.; Weber, K.H.

    1981-01-01

    Using a thermionic diode we have detected the ionic fragments formed by associative ionization and dissociation after continuum-state pair absorption processes in Cs-Cs and Cs-K systems. Assuming an ionization probability of unity of the excited species and calibrating the pair absorption bands by taking into account the known photoionization cross section of the atoms we found excellent agreement with data from classical absorption measurements. (orig.)

  15. Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

    International Nuclear Information System (INIS)

    Auciello, O.; Ameen, M.S.; Kingon, A.I.

    1989-01-01

    Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

  16. Using Multispectral Imaging to Measure Temperature Profiles and Emissivity of Large Thermionic Dispenser, Cathodes

    International Nuclear Information System (INIS)

    Simmons, D.F.; Fortgang, C.M.; Holtkamp, D.B.

    2001-01-01

    Thermionic dispenser cathodes are widely used in modern high-power microwave tubes. Use of these cathodes has led to significant improvement in performance. In recent years these cathodes have been used in electron linear accelerators (LINACs), particularly in induction LINACs, such as the Experimental Test Accelerator at Lawrence Livermore National Laboratory and the Relativistic Test Accelerator at Lawrence Berkeley National Laboratory. For induction LINACs, the thermionic dispenser cathode provides greater reproducibility, longer pulse lengths, and lower emittance beams than does a field emission cathode. Los Alamos National Laboratory is fabricating a dual-axis X-ray radiography machine called dual-axis radiograph hydrodynamic test (DARHT). The second axis of DARHT consists of a 2-kA, 20-MeV induction LINAC that uses a 3.2-MeV electron gun with a tungsten thermionic-dispenser cathode. Typically the DARHT cathode current density is 10 A/cm 2 at 1050 C. Under these conditions current density is space-charge limited, which is desirable since current density is independent of temperature. At lower temperature (the temperature-limited regime) there are variations in the local current density due to a nonuniform temperature profile. To obtain the desired uniform current density associated with space-charge limited operation, the coolest area on the cathode must be at a sufficiently high temperature so that the emission is space-charge limited. Consequently, the rest of the cathode is emitting at the same space-charge-limited current density but is at a higher temperature than necessary. Because cathode lifetime is such a strong function of cathode temperature, there is a severe penalty for nonuniformity in the cathode temperature. For example, a temperature increase of 50 C means cathode lifetime will decrease by a factor of at least four. Therefore, we are motivated to measure the temperature profiles of our large-area cathodes

  17. Simulations of thermionic suppression during tungsten transient melting experiments.

    Czech Academy of Sciences Publication Activity Database

    Komm, Michael; Tolias, P.; Ratynskaia, S.; Dejarnac, Renaud; Gunn, J. P.; Krieger, K.; Podolník, Aleš; Pitts, R.A.; Pánek, Radomír

    T170, December (2017), č. článku 014069. ISSN 0031-8949. [PFMC 2017: 16th International Conference on Plasma-Facing Materials and Components for Fusion Applications. Düsseldorf, 16.05.2017-19.05.2017] R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : tokamak * thermionic emission * tungsten * melt * plasma-facing component Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: 1.3 Physical sciences Impact factor: 1.280, year: 2016 http://iopscience.iop.org/article/10.1088/1402-4896/aa9209

  18. Design and operation of a thermionic converter in air

    International Nuclear Information System (INIS)

    Horner, M.H.; Begg, L.L.; Smith, J.N. Jr.; Geller, C.B.; Kallnowski, J.E.

    1995-01-01

    An electrically heated thermionic converter has been designed, built and successfully tested in air. Several unique features were incorporated in this converter: an integral cesium reservoir, innovative ceramic-to-metal seals, a heat rejection system coupling the collector to a low temperature heat sink and an innovative cylindrical heater filament. The converter was operated for extended periods of time with the emitter at about 1900 K. the collector at about 700 K, and a power density of over 2 w(e)/sq. cm. Input power transients were run between 50% and 100% thermal power, at up to 1% per second, without instabilities in performance

  19. Multi-channel pulser for the SLC thermionic electron source

    International Nuclear Information System (INIS)

    Browne, M.J.; Clendenin, J.E.; Corredoura, P.L.; Jobe, R.K.; Koontz, R.F.; Sodja, J.

    1985-01-01

    A new pulser developed for the SLC thermionic gun has been operational since September 1984. It consists of two planar triode amplifiers with a common output triode driving the gun cathode to produce two independent pulses of up to 9A with a 3 nsec FWHM pulse width. Three long-pulse amplifiers are also connected to the cathode to produce pulses with widths controllable between 100 nsec and 1.6 μsec. Each amplifier has independent timing and amplitude control through a fiber optic link to the high voltage plane of the gun cathode-grid structure. The pulser and its operating characteristics are described. 15 refs., 3 figs

  20. Synthesis, thermionic emission and magnetic properties of (NdxGd1–x)B6

    International Nuclear Information System (INIS)

    Bao Li-Hong; Zhang Jiu-Xing; Zhou Shen-Lin; Tegus

    2011-01-01

    Polycrystalline rare-earth hexaborides (Nd x Gd 1–x )B 6 (x = 0, 0.2, 0.6, 0.8, 1) were prepared by the reactive spark plasma sintering (SPS) method using mixed powder of GdH 2 , NdH 2 and B. The effects of Nd doping on the crystal structure, the grain orientation, the thermionic emission and the magnetic properties of the hexaboride were investigated by X-ray diffraction, electron backscattered diffraction and magnetic measurements. It is found that all the samples sintered by the SPS method exhibit high densities (> 95%) and high values of Vickers hardness (2319 kg/mm 2 ). The values are much higher than those obtained in the traditional method. With the increase of Nd content, the thermionic emission current density increases from 11 to 16.30 A/cm 2 and the magnetic phase transition temperature increases from 5.85 to 7.95 K. Thus, the SPS technique is a suitable method to synthesize the dense rare-earth hexaborides with excellent properties. (interdisciplinary physics and related areas of science and technology)

  1. Argonne inverted sputter source

    International Nuclear Information System (INIS)

    Yntema, J.L.; Billquist, P.J.

    1983-01-01

    The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

  2. Sputtering and reflection of self-bombardment of tungsten material

    International Nuclear Information System (INIS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2015-01-01

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

  3. Sputtering and reflection of self-bombardment of tungsten material

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

    2015-04-15

    In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

  4. Data compilation of angular distributions of sputtered atoms

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

    1990-01-01

    Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

  5. Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

    International Nuclear Information System (INIS)

    Qian, H X; Zeng, X R; Zhou, W

    2010-01-01

    Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

  6. Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

    International Nuclear Information System (INIS)

    Zhang, Lili; Xu, Xue; Wu, Yuejin

    2013-01-01

    Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

  7. Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, André; Yushkov, Georgy Yu.

    2009-04-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  8. Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

  9. Chemical sputtering of graphite by H+ ions

    International Nuclear Information System (INIS)

    Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

    1976-01-01

    In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

  10. Surface properties of ceramic/metal composite materials for thermionic converter applications

    International Nuclear Information System (INIS)

    Davis, P.R.; Bozack, M.J.; Swanson, L.W.

    1983-01-01

    Ceramic/metal composite electrode materials are of interest for thermionic energy conversion (TEC) applications for several reasons. These materials consist of submicron metal fibers or islands in an oxide matrix and therefore provide a basis for fabricating finely structured electrodes, with projecting or recessed metallic regions for more efficient electron emission or collection. Furthermore, evaporation and surface diffusion of matrix oxides may provide oxygen enhancement of cesium adsorption and work function lowering at both the collecting and emitting electrode surfaces of the TEC. Finally, the high work function oxide matrix or oxide-metal interfaces may provide efficient surface ionization of cesium for space-charge reduction in the device. The authors are investigating two types of ceramic/metal composite materials. One type is a directionally solidified eutectic consisting of a bulk oxide matrix such as UO 2 or stabilized ZrO 2 with parallel metal fibers (W) running through the oxide being exposed at the surface by cutting perpendicular to the fiber direction. The second type of material, called a surface eutectic, consists of a refractory substrate (Mo) with a thin layer of deposited and segregated material (Mo-Cr 2 O 3 -A1 2 O 3 ) on the surface. The final configuration of this layer is an oxide matrix with metallic islands scattered throughout

  11. Angular dependence of preferential sputtering and composition in aluminum--copper thin films

    International Nuclear Information System (INIS)

    Rudeck, P.J.; Harper, J.M.E.; Fryer, P.M.

    1989-01-01

    The copper concentration in aluminum--copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al--Cu alloys as a function of the Cu concentration (5--13 at. %) and the angle of ion incidence (0--40 0 from normal). During deposition, the films were partially resputtered by 500-eV Ar + ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40 0 incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that in multicomponent film deposition under ion bombardment, the film composition will vary as a function of the surface topography. We will also show how the level of argon left trapped in the films varies inversely with respect to the ion flux

  12. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...... the minimum represents the value closest to a bulk-yield induced by electron bombardment. It may also include contributions from the mechanisms that enhance the yield for thin and very thick films....

  13. Fluence-dependent sputtering yield of micro-architectured materials

    Energy Technology Data Exchange (ETDEWEB)

    Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

    2017-06-15

    Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

  14. Computer simulation of sputtering: A review

    International Nuclear Information System (INIS)

    Robinson, M.T.; Hou, M.

    1992-08-01

    In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

  15. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  16. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  17. Sputtering on cobalt with noble gas ions

    International Nuclear Information System (INIS)

    Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

    1983-01-01

    Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

  18. Electrical resistivity of sputtered molybdenum films

    International Nuclear Information System (INIS)

    Nagano, J.

    1980-01-01

    The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

  19. Reducing Energy Degradation Due to Back-bombardment Effect with Modulated RF Input in S-band Thermionic RF Gun

    Science.gov (United States)

    Kii, Toshiteru; Nakai, Yoko; Fukui, Toshio; Zen, Heishun; Kusukame, Kohichi; Okawachi, Norihito; Nakano, Masatsugu; Masuda, Kai; Ohgaki, Hideaki; Yoshikawa, Kiyoshi; Yamazaki, Tetsuo

    2007-01-01

    Energy degradation due to back-bombardment effect is quite serious to produce high-brightness electron beam with long macro-pulse with thermionic rf gun. To avoid the back-bombardment problem, a laser photo cathode is used at many FEL facilities, but usually it costs high and not easy to operate. Thus we have studied long pulse operation of the rf gun with thermionic cathode, which is inexpensive and easy to operate compared to the photocathode rf gun. In this work, to reduce the energy degradation, we controlled input rf power amplitude by controlling pulse forming network of the power modulator for klystron. We have successfully increased the pulse duration up to 4 μs by increasing the rf power from 7.8 MW to 8.5 MW during the macro pulse.

  20. Effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films deposited by RF-ICPIS enhanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Li, Dongke [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Chen, JunFang, E-mail: chenjf@scnu.edu.com [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China); Research Resources Center, SCNU, Guangzhou 510000 (China); Zou, Changwei, E-mail: qingyihaiyanas@163.com [Department of Physics and Development Center for New Materials Engineering and Technology in University of Guangdong, Zhanjiang Normal University, Zhanjiang 524048 (China); Ma, Junhui; Li, Pengfei; Li, Ye [The School of Physics and Telecommunication Engineering, SCNU, Guangzhou 510000 (China)

    2014-10-01

    Highlights: • RF-ICPIS enhanced magnetron sputtering technique is used for Ti–Al–N deposition. • Al contents has closed relation with total gas pressure. • Ti–Al–N films with high Al contents of 34.16 at.% are obtained. • Effects of Al on the microstructure and mechanical properties are discussed. - Abstract: Ti–Al–N films were deposited on Si (1 0 0) and mirror-polished stainless steel at 300 °C by RF-ICPIS enhanced magnetron sputtering technique. Focusing on the effects of Al concentrations on the microstructure and mechanical properties of Ti–Al–N films, the structure and the growth morphology were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM). Ti–Al–N films with highest Al contents of were deposited at total gas pressure of 1.0 Pa. XRD experiments exhibited that the Ti–Al–N films were f.c.c structure with diffraction peaks at 2θ = 37.1°, 43.5°, 63.2°, and 75.1°, respectively. The FWHM values of (1 1 1) diffraction peaks showed a decrease while the (2 2 0) diffraction peaks showed an increase trend with the increasing of Al concentrations. With the variation of total gas pressure from 0.5 to 1.5 Pa, the RMS values of Ti–Al–N films increased from 1.286 to 7.751 nm. The hardness of the Ti–Al–N films was in the range of 28.4–36.2 GPa while the friction coefficients were in the range of 0.339–0.732.

  1. Design, construction and measurements of an alpha magnet as a solution for compact bunch compressor for the electron beam from Thermionic RF Gun

    Science.gov (United States)

    Rajabi, A.; Jazini, J.; Fathi, M.; Sharifian, M.; Shokri, B.

    2018-03-01

    The beam produced by a thermionic RF gun has wide energy spread that makes it unsuitable for direct usage in photon sources. Here in the present work, we optimize the extracted beam from a thermionic RF gun by a compact economical bunch compressor. A compact magnetic bunch compressor (Alpha magnet) is designed and constructed. A comparison between simulation results and experimental measurements shows acceptable conformity. The beam dynamics simulation results show a reduction of the energy spread as well as a compression of length less than 1 ps with 2.3 mm-mrad emittance.

  2. Sputtering properties of tungsten 'fuzzy' surfaces

    International Nuclear Information System (INIS)

    Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

    2011-01-01

    Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

  3. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  4. Influence of ion source configuration and its operation parameters on the target sputtering and implantation process.

    Science.gov (United States)

    Shalnov, K V; Kukhta, V R; Uemura, K; Ito, Y

    2012-06-01

    In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to α-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N(2)-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

  5. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

    2015-12-30

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

  6. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.

    2015-01-01

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

  7. Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Saiz, Fernan [Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London, SW7 2A7 (United Kingdom); Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California, 92697 (United States)

    2016-06-15

    The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

  8. Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

    International Nuclear Information System (INIS)

    Saiz, Fernan; Gamero-Castaño, Manuel

    2016-01-01

    The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

  9. CH₃NH₃PbI₃-based planar solar cells with magnetron-sputtered nickel oxide.

    Science.gov (United States)

    Cui, Jin; Meng, Fanping; Zhang, Hua; Cao, Kun; Yuan, Huailiang; Cheng, Yibing; Huang, Feng; Wang, Mingkui

    2014-12-24

    Herein we report an investigation of a CH3NH3PbI3 planar solar cell, showing significant power conversion efficiency (PCE) improvement from 4.88% to 6.13% by introducing a homogeneous and uniform NiO blocking interlayer fabricated with the reactive magnetron sputtering method. The sputtered NiO layer exhibits enhanced crystallization, high transmittance, and uniform surface morphology as well as a preferred in-plane orientation of the (200) plane. The PCE of the sputtered-NiO-based perovskite p-i-n planar solar cell can be further promoted to 9.83% when a homogeneous and dense perovskite layer is formed with solvent-engineering technology, showing an impressive open circuit voltage of 1.10 V. This is about 33% higher than that of devices using the conventional spray pyrolysis of NiO onto a transparent conducting glass. These results highlight the importance of a morphology- and crystallization-compatible interlayer toward a high-performance inverted perovskite planar solar cell.

  10. Formation of large clusters during sputtering of silver

    International Nuclear Information System (INIS)

    Staudt, C.; Heinrich, R.; Wucher, A.

    2000-01-01

    We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

  11. Microfiber Bragg grating hydrogen sensor base on co-sputtered Pd/Ni composite film

    Science.gov (United States)

    Wang, Gaopeng; Yang, Minghong; Dai, Jixiang; Cheng, Cheng; Yuan, Yinqian

    2015-07-01

    A novel hydrogen sensor based on Pd/Ni co-sputtered coating on micro fiber Bragg grating (MFBG) is proposed and experimentally demonstrated. The microfiber is stretched uniformly and the Bragg grating is directly inscribed on the microfiber without hydrogen loading using 193 nm ArF excimer laser and a phase mask. Palladium and nickel coatings are co-sputtered on the micro fiber Bragg grating for hydrogen sensing. The MFBG hydrogen sensors are characterized concerning their response to the hydrogen, ambient temperature and ambient refractive index, respectively. The performance of the proposed MFBG hydrogen sensor is obviously enhanced, especially when compared to standard FBG hydrogen sensors.

  12. Sputtering calculations with the discrete ordinated method

    International Nuclear Information System (INIS)

    Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

    1977-01-01

    The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

  13. Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

    International Nuclear Information System (INIS)

    Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

    2008-01-01

    Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

  14. Transport theory of sputtering I: Depth of origin of sputtered atoms

    International Nuclear Information System (INIS)

    Zhang, Zhu Lin

    1999-01-01

    Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

  15. Evaluation of precision in measurements of uranium isotope ratio by thermionic mass spectrometry

    International Nuclear Information System (INIS)

    Moraes, N.M.P. de; Rodrigues, C.

    1977-01-01

    The parameters which affect the precision and accuracy of uranium isotopic ratios measurements by thermionic mass spectrometry are discussed. A statistical designed program for the analysis of the internal and external variances are presented. It was done an application of this statistical methods, in order to get mass discrimination factor, and its standard mean deviation, by using some results already published for 235 U/ 238 U ratio in NBS uranium samples, and natural uranium [pt

  16. Sputtering induced surface composition changes in copper-palladium alloys

    International Nuclear Information System (INIS)

    Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

    1981-01-01

    It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

  17. MD simulation of cluster formation during sputtering

    International Nuclear Information System (INIS)

    Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

    2001-01-01

    The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

  18. Experimental and analytical study of the sputtering phenomena

    International Nuclear Information System (INIS)

    Howard, P.A.

    1976-03-01

    One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

  19. Measurements of beryllium sputtering yields at JET

    Science.gov (United States)

    Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

    2011-08-01

    The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

  20. Preparation and characterization of RF magnetron sputtered CuO/CaTi{sub 4}O{sub 9} thin films with enhanced third-order nonlinear optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yin, Congfei; Liang, Xiaojuan, E-mail: lxj6126@126.com; Hu, Guangcai; Hu, Xie; Chen, Xipeng; Li, Pengzhi; Xiang, Weidong, E-mail: xiangweidong001@126.com

    2017-04-15

    The titanate, is a material of interest for various energy applications, including photovoltaics, catalysts, and high-rate energy storage devices. Herein, its related materials, CuO/CaTi{sub 4}O{sub 9} [CCTO] thin films, were successfully fabricated on SrTiO{sub 3} (100) substrates by RF magnetron sputtering assisted with subsequent oxygen annealing. This obtained CCTO thin films were then systemically studied by X-ray powder diffraction (XRD), atomic force microscopy (AFM), scan electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). It was found that CuO and CaTi{sub 4}O{sub 9} (001) particles were closely accumulated together on the surface of the substrate in the annealing process after comparing with that of the as-prepared thin film, which was verified by SEM and AFM results. Furthermore, we investigated the third-order nonlinear optical (NLO) properties of the as-prepared and annealed CCTO thin film by means of the Z-scan technique using 650 nm femtosecond laser pulse. Post-deposition oxygen annealing was found to modify the morphological characteristics of the films, resulting in enhancing their NLO properties. The observation of NLO performance of annealed CCTO thin film indicates that RF magnetron sputtering is a feasible method for the fabrication of optical thin films, which can be expanded to fabricate other NLO materials from the corresponding dispersions. Naturally, we concluded that the CCTO thin film occupy a better NLO property, and thus enlarge its application in nonlinear optics. - Highlights: • The CCTO thin film was prepared using the RF magnetron sputtering and oxygen annealing. • The film was prepared on the SrTiO{sub 3}(100) substrates with a Ca{sub 2}CuO{sub 3} target. • The oxygen annealing was found can effectively enhance the film quality and NLO property. • The film was characterized using XPS, SEM, AFM, TEM, XRD and Z-scan techniques.

  1. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  2. Laser sputtering. Pt. 1

    International Nuclear Information System (INIS)

    Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

    1985-01-01

    Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

  3. Analysis of thermionic DC electron gun for 125 MeV linac

    International Nuclear Information System (INIS)

    Kanno, K.; Sato, Isamu; Sato, K.

    2000-01-01

    The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

  4. Analysis of thermionic DC electron gun for 125 MeV linac

    Energy Technology Data Exchange (ETDEWEB)

    Kanno, K. [Graduate School of Science and Technology, Nihon Univ., Funabashi, Chiba (Japan); Sato, Isamu; Sato, K. [Nihon Univ., Funabashi, Chiba (Japan). Atomic Energy Research Inst] [and others

    2000-07-01

    The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

  5. Sputtering and inelastic processes

    International Nuclear Information System (INIS)

    Baranov, I.A.; Tsepelevic, S.O.

    1987-01-01

    Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

  6. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  7. Large Area Sputter Coating on Glass

    Science.gov (United States)

    Katayama, Yoshihito

    Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

  8. Particle Simulations of a Thermionic RF Gun with Gridded Triode Structure for Reduction of Back-Bombardment

    CERN Document Server

    Kusukame, K; Kii, T; Masuda, K; Nakai, Y; Ohgaki, H; Yamazaki, T; Yoshikawa, K; Zen, H

    2005-01-01

    Thermionic RF guns show advantageous features compared with photocathode ones such as easy operation and much higher repetition rate of micropulses, both of which are suitable for their application to high average power FELs. They however suffer from the back-bombardment effect [1], i.e., in conventional RF guns, electrons are extracted from cathode also in the latter half of accelerating phase and tend to back-stream to hit the cathode, and as a result the macropulse duration is limited down to severalμsec Against this adverse effect in thermionic RF guns, introduction of the triode structure has been proposed [2], where the accelerating phase and amplitude nearby the cathode can be controlled regardless of the phase of the first accelerating cell in the conventional RF gun. Our one-dimensional particle simulation results predict that the back-bombardment power can be reduced by 99 % only with 30-40 kW RF power fed to the grid in the present triode structure with an optimal phase difference from th...

  9. Enhancement in dye-sensitized solar cells based on MgO-coated TiO2 electrodes by reactive DC magnetron sputtering

    International Nuclear Information System (INIS)

    Wu Sujuan; Han Hongwei; Tai Qidong; Zhang Jing; Xu Sheng; Zhou Conghua; Yang Ying; Hu Hao; Chen Bolei; Sebo, Bobby; Zhao Xingzhong

    2008-01-01

    A surface modification method was carried out by reactive DC magnetron sputtering to fabricate TiO 2 electrodes coated with insulating MgO for dye-sensitized solar cells. The MgO-coated TiO 2 electrode had been characterized by x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), scanning electron microscopy (SEM), UV-vis spectrophotometer, cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The study results revealed that the TiO 2 modification increases dye adsorption, decreases trap states and suppresses interfacial recombination. The effects of sputtering MgO for different times on the performance of DSSCs were investigated. It indicated that sputtering MgO for 3 min on TiO 2 increases all cell parameters, resulting in increasing efficiency from 6.45% to 7.57%

  10. Computer simulation of the self-sputtering of uranium

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1983-01-01

    The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

  11. Performance review of thermionic electron gun developed for RF linear accelerators at RRCAT

    International Nuclear Information System (INIS)

    Wanmode, Yashwant; Mulchandani, J.; Reddy, T.S.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

    2015-01-01

    RRCAT is engaged in development of RF electron linear accelerator for irradiation of industrial and agricultural products. Thermionic electron gun is primary source for this accelerator as beam current in the RF accelerator is modest and thermionic emission is most prevalent option for electron gun development. An electron gun has to meet high cathode emission capability, low filament power, good accessibility for cathode replacement and should provide short time for maintenance. Electron linear accelerator up to beam energy of 10 MeV require electron source of 45-50 keV beam energy and emission current of 1 A. Electron optics of gun and electron beam profile simulations were carried out using CST's particle tracking code and EGUN code. Triode type electron gun of cathode voltage 50 kV pulsed has been designed, developed and integrated with 10 MeV electron linear accelerators at RRCAT. Beam current of more than 600 mA has been measured with faraday cup in the test stand developed for characterizing the electron gun. Two accelerators one is imported and another one developed indigenously has been energized using this electron gun. Beam energy of 5-10 MeV has been achieved with beam current of 250-400 mA by integrating this electron gun with the linear accelerator. This paper reviews the performance of indigenously developed electron gun for both linear accelerators. (author)

  12. Reactive dual magnetron sputtering for large area application

    International Nuclear Information System (INIS)

    Struempfel, J.

    2002-01-01

    Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

  13. Design and implementation of a fs-resolved transmission electron microscope based on thermionic gun technology

    Energy Technology Data Exchange (ETDEWEB)

    Piazza, L., E-mail: luca.piazza@epfl.ch [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland); Masiel, D.J. [Integrated Dynamic Electron Solutions, Inc., 455 Bolero Drive, Danville, CA 94526 (United States); LaGrange, T.; Reed, B.W. [Condensed Matter and Materials Division Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-356, Livermore, CA 94550 (United States); Barwick, B. [Department of Physics, Trinity College, 300 Summit St., Hartford, CT 06106 (United States); Carbone, Fabrizio [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland)

    2013-09-23

    Highlights: • We present the implementation of a femtosecond-resolved ultrafast TEM. • This is the first ultrafast TEM based on a thermionic gun geometry. • An additional condenser lens has been used to maximize the electron count. • We achieved a time resolution of about 300 fs and an energy resolution of 1 eV. - Abstract: In this paper, the design and implementation of a femtosecond-resolved ultrafast transmission electron microscope is presented, based on a thermionic gun geometry. Utilizing an additional magnetic lens between the electron acceleration and the nominal condenser lens system, a larger percentage of the electrons created at the cathode are delivered to the specimen without degrading temporal, spatial and energy resolution significantly, while at the same time maintaining the femtosecond temporal resolution. Using the photon-induced near field electron microscopy effect (PINEM) on silver nanowires the cross-correlation between the light and electron pulses was measured, showing the impact of the gun settings and initiating laser pulse duration on the electron bunch properties. Tuneable electron pulses between 300 fs and several ps can be obtained, and an overall energy resolution around 1 eV was achieved.

  14. Development of a thermionic magnicon amplifier at 11.4 GHz. Technical progress report, 16 May 1994--31 December 1995

    International Nuclear Information System (INIS)

    Gold, S.H.; Fliflet, A.W.; Manheimer, W.M.

    1995-01-01

    This is a progress report on a four-year research program entitled 'Development of a Thermionic Magnicon Amplifier at 11.4 GHz', which is under way in the Plasma Physics Division of the Naval Research Laboratory (NRL) under Interagency Agreement DE-AI02-94ER40681. This report covers the period 16 May 1994 through 31 December 1995. The magnicon is an advanced microwave tube with potential application to future high gradient linear accelerators such as TeV colliders. Under this program, NRL plans to build and test a thermionic magnicon amplifier tube powered by a 500 kV, 200 A, 10 Hz modulator with a 1 μsec pulse. However, the experiments that were carried out during the period covered by this report were driven by a single-shot Marx generator, and the electron beam was produced from a graphite plasma cathode

  15. Matted-fiber divertor tagets for sputter resistance

    International Nuclear Information System (INIS)

    Gierszewski, P.J.; Todreas, N.E.; Mikic, B.; Yang, T.F.

    1981-06-01

    Reductions in net sputtering yields can be obtained by altering the surface topography to maximize redeposition of sputtered atoms. A simple analysis is used to indicate a potential reduction by a factor of 2 to 5 for matted fiber divertor targets, relatively independent of incident, reflected and sputtered atom distributions. The fiber temperature is also shown to be acceptable, even up to 10 MW/m 2 , for reasonably combinations of materials, fiber diameter and fiber spacing

  16. Development of a high temperature solar receiver for high-efficient thermionic conversion systems; Fukugo netsuden henkan system yo chokoon taiyo junetsuki no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Umeoka, T; Naito, H; Yugami, H; Arashi, H [Tohoku University, Sendai (Japan). Faculty of Engineering

    1996-10-27

    For thermionic conversion systems (TIC) using concentrated sunlight as heat source, the newly developed solar receiver was tested. Concentrated sunlight aims at the inner surface of the cavity type solar receiver. The emitter of TIC installed in the rear of the solar receiver is uniformly heated over 1700K by thermal radiation from the rear of the solar receiver, emitting thermion. Electric power is generated by collecting the thermion by collector. Mo is used as emitter material, however, because of poor heat absorption of Mo, high-absorptive TiC is used for heat absorption surface to heat Mo by thermal conduction from high-temperature TiC. Functionally gradient material (FGM) with an intermediate layer of gradient TiC/Mo ratios between TiC and Mo is used as emitter material. The emitter is thus uniformly heated at high temperatures of 1723{plus_minus}12K. As a result, the developed solar receiver is applicable to heat the emitter of TIC. Heat flux measurement at the graphite cavity clarified that cavity temperature of as high as 1780K and heat flow of 50W/cm{sup 2} are obtained at 4.7kW in input. 6 figs.

  17. Sputtering of a silicon surface: Preferential sputtering of surface impurities

    Czech Academy of Sciences Publication Activity Database

    Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

    -, č. 303 (2013), s. 205-208 ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

  18. Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux

    International Nuclear Information System (INIS)

    Bogaerts, Annemie; Okhrimovskyy, Andriy; Baguer, Neyda; Gijbels, Renaat

    2005-01-01

    A model is developed for a cylindrical hollow cathode discharge (HCD), with an axial gas flow (entering through a hole in the cathode bottom). The model combines a commercial computational fluid dynamics program 'FLUENT' to compute the gas flow, with home-developed Monte Carlo and fluid models for the plasma behaviour. In this paper, we focus on the behaviour of the sputtered atoms, and we investigate how the gas flow affects the sputtered atom density profiles and the fluxes, which is important for sputter deposition. The sputtered atom density profiles are not much affected by the gas flow. The flux, on the other hand, is found to be significantly enhanced by the gas flow, but in the present set-up it is far from uniform in the radial direction at the open end of the HCD, where a substrate for deposition could be located

  19. Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

    Science.gov (United States)

    Khun, N W; Liu, E

    2011-06-01

    Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

  20. Physics of ion sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1984-04-01

    The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures

  1. Variables affecting simulated Be sputtering yields

    Energy Technology Data Exchange (ETDEWEB)

    Björkas, C., E-mail: carolina.bjorkas@helsinki.fi; Nordlund, K.

    2013-08-15

    Since beryllium is a strong candidate for the main plasma-facing material in future fusion reactors, its sputtering behaviour plays an important role in predicting the reactor’s life-time. Consensus about the actual sputtering yields has not yet been achieved, as observations are influenced by experimental method and/or studied sample. In this work, the beryllium sputtering due to deuterium and beryllium self-bombardment is analyzed using molecular dynamics simulations. The main methodological aspects that influence the outcome, such as flux and fluence of the bombardment, are highlighted, and it is shown that the simulated yields also depend on the sample structure and deuterium content.

  2. FY1995 study to create the high density magnetic recording devices by using an ultra clean sputtering process; 1995 nendo choseijo sputter process ni yoru chokomitsudo jiki kiroku device no sosei

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    It is important to control microstructure of thin film magnetic devices such as recording heads and media, in order to induce excellent magnetic properties. Since the impurities in the sputtering atmosphere is easily thought to affect strongly on the initial film growth, we will develop the highly purified sputtering atmosphere to establish a fabrication technology of ultra thin metallic films with desirable microstructure. A specialized multi-sputtering system which has extremely clean atmosphere (impurity level: 1/10000 compared to conventional systems) were realized by (a) decreasing out-gassing rate from vacuum chamber, pumping system, cathode, robot, etc. and (b) using ultra-clean processing gas. The base pressure was 8 x 10{sup -12} Torr (XHV) and the build-up rate was less than 1 x 10{sup -8} Torrl/sec. From the correlation between the microstructure and magnetic properties of a part of spin-valve GMR films, the guiding principle for the microstructural design were clarified to induce the exchange coupling effectively at the ferro/antiferromagnetic interface and to enhance the GMR effect at the magnetic/non-magnetic interface. The mechanism of' Cr segregation on the grain boundaries was clarified, in thin film media deposited under ultra clean sputtering process. The material specification of the magnetic ultra thin film media for high density recording with low media noise were designed from view of the thermal agitation. (NEDO)

  3. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2008-01-01

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

  4. Sensitivity and stability of sputtered sandwich photocells

    International Nuclear Information System (INIS)

    Murray, H.; Piel, A.

    1979-01-01

    The physical parameters of sputtered Metal-Semiconductor-Metal photocells are described in view of solar energy conversion. Specific properties of sputtered films lead to a particular stability of physical parameters such as dark conduction, capacitance and dielectric losses. Interband transitions occur when the photon energy is larger than the bandgap of the photoconductor. The transport of photo-excited carriers in the built-in electric field involves the existence of a photovoltaic effect. The influence of sputtering on the specific properties of solar energy conversion is discussed. (author)

  5. Design study of a low-emittance high-repetition rate thermionic rf gun

    Directory of Open Access Journals (Sweden)

    A. Opanasenko

    2017-05-01

    Full Text Available We propose a novel gridless continuous-wave radiofrequency (rf thermionic gun capable of generating nC ns electron bunches with a rms normalized slice emittance close to the thermal level of 0.3 mm mrad. In order to gate the electron emission, an externally heated thermionic cathode is installed into a stripline-loop conductor. Two high-voltage pulses propagating towards each other in the stripline-loop overlap in the cathode region and create a quasielectrostatic field gating the electron emission. The repetition rate of pulses is variable and can reach up to one MHz with modern solid-state pulsers. The stripline attached to a rf gun cavity wall has with the wall a common aperture that allows the electrons to be injected into the rf cavity for further acceleration. Thanks to this innovative gridless design, simulations suggest that the bunch emittance is approximately at the thermal level after the bunch injection into the cavity provided that the geometry of the cathode and aperture are properly designed. Specifically, a concave cathode is adopted to imprint an Ƨ-shaped distribution onto the beam transverse phase-space to compensate for an S-shaped beam distribution created by the spherical aberration of the aperture-cavity region. In order to compensate for the energy spread caused by rf fields of the rf gun cavity, a 3rd harmonic cavity is used. A detailed study of the electrodynamics of the stripline and rf gun cavity as well as the beam optics and bunch dynamics are presented.

  6. The design of a 3 GHz thermionic RF-gun and energy filter for MAX-lab

    CERN Document Server

    Anderberg, B; Demirkan, M; Eriksson, M; Malmgren, L; Werin, S

    2002-01-01

    A new pre-injector has been designed for the MAX-laboratory. It consists of an RF-gun and a magnetic energy filter. The newly designed RF-gun geometry will be operated at 3 GHz in the thermionic mode using a BaO cathode. The pre-injector will provide a 2.3 MeV electron beam in 3 ps micro pulses to a new injector system currently under construction.

  7. Comparative assessment of out-of-core nuclear thermionic power systems

    International Nuclear Information System (INIS)

    Estabrook, W.C.; Koenig, D.R.; Prickett, W.Z.

    1975-01-01

    The hardware selections available for fabrication of a nuclear electric propulsion stage for planetary exploration were explored. The investigation was centered around a heat-pipe-cooled, fast-spectrum nuclear reactor for an out-of-core power conversion system with sufficient detail for comparison with the in-core system studies completed previously. A survey of competing power conversion systems still indicated that the modular reliability of thermionic converters makes them the desirable choice to provide the 240-kWe end-of-life power for at least 20,000 full power hours. The electrical energy will be used to operate a number of mercury ion bombardment thrusters with a specific impulse in the range of about 4,000-5,000 seconds. (Author)

  8. Atomic and plasma-material interaction data for fusion. V. 7, part B. Particle induced erosion of Be, C and W in fusion plasmas. Part B: Physical sputtering and radiation-enhanced sublimation

    International Nuclear Information System (INIS)

    Eckstein, W.; Stephens, J.A.; Clark, R.E.H.; Davis, J.W.; Haasz, A.A.; Vietzke, E.; Hirooka, Y.

    2001-01-01

    The present volume of Atomic and Plasma-Material Interaction Data for Fusion is devoted to a critical review of the physical sputtering and radiation enhanced sublimation (RES) behaviour of fusion plasma-facing materials, in particular carbon, beryllium and tungsten. The present volume is intended to provide fusion reactor designers a detailed survey and parameterization of existing, critically assessed data for the chemical erosion of plasma-facing materials by particle impact. The survey and data compilation is presented for a variety of materials containing the elements C, Be and W (including dopants in carbon materials) and impacting plasma species. The dependencies of physical sputtering and RES yields on the material temperature, incident projectile energy, and incident flux are considered. The main data compilation is presented as separate data sheets indicating the material, impacting plasma species, experimental conditions, and parameterizations in terms of analytic functions

  9. Low work-function thermionic emission and orbital-motion-limited ion collection at bare-tether cathodic contact

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin, E-mail: xin.chen@upm.es; Sanmartín, J. R., E-mail: juanr.sanmartin@upm.es [Departamento de Física Aplicada, Escuela Técnica Superior de Ingeniería Aeronáutica y del Espacio, Universidad Politécnica de Madrid, Plaza Cardenal Cisneros, 3, 28040 Madrid (Spain)

    2015-05-15

    With a thin coating of low-work-function material, thermionic emission in the cathodic segment of bare tethers might be much greater than orbital-motion-limited (OML) ion collection current. The space charge of the emitted electrons decreases the electric field that accelerates them outwards, and could even reverse it for high enough emission, producing a potential hollow. In this work, at the conditions of high bias and relatively low emission that make the potential monotonic, an asymptotic analysis is carried out, extending the OML ion-collection analysis to investigate the probe response due to electrons emitted by the negatively biased cylindrical probe. At given emission, the space charge effect from emitted electrons increases with decreasing magnitude of negative probe bias. Although emitted electrons present negligible space charge far away from the probe, their effect cannot be neglected in the global analysis for the sheath structure and two thin layers in between sheath and the quasineutral region. The space-charge-limited condition is located. It is found that thermionic emission increases the range of probe radius for OML validity and is greatly more effective than ion collection for cathodic contact of tethers.

  10. Raman spectroscopy of sputtered metal-graphene and metal-oxide-graphene interfaces

    Science.gov (United States)

    Chen, Ching-Tzu; Gajek, Marcin; Freitag, Marcus; Kuroda, Marcelo; Perebeinos, Vasili; Raoux, Simone

    2012-02-01

    In this talk, we report our recent development in sputtering deposition of magnetic and non-magnetic metal and metal-oxide thin films on graphene for applications in spintronics and nanoeleoctronics. TEM and SEM images demonstrate homogeneous coverage, uniform thickness, and good crystallinity of the sputtered films. Raman spectroscopy shows that the structure of the underlying graphene is well preserved, and the spectral weight of the defect D mode is comparable to that of the e-beam evaporated samples. Most significantly, we report the first observation of graphene-enhanced surface excitations of crystalline materials. Specifically, we discover two pronounced dispersive Raman modes at the interface of graphene and the nickel-oxide and cobalt-oxide films which we attribute to the strong light absorption and high-order resonant scattering process in the graphene layer. We will present the frequency-dependent, polarization-dependent Raman data of these two modes and discuss their microscopic origin.

  11. Sputtering of two-phase AgxCuγ alloys

    International Nuclear Information System (INIS)

    Bibic, N.; Milosavljevic, M.; Perusko, D.; Wilson, I.H.

    1992-01-01

    Elemental sputtering yields from two phase AgCu alloys were measured for 20, 40 and 50 at % Ag. Argon ion bombardment energies were in the range 35-55 keV and the ion dose was 1 x 10 19 ions cm -2 . The sputtering yield for silver was found to be considerably below what was expected by simple selective sputtering of a two component alloy. Analysis by electron probe X-ray microanalysis and scanning electron microscopy of the eroded surface indicated that surface diffusion of copper from copper rich grains and geometrical constraints in the dense cone forest on Cu/Ag eutectic regions combine to reduce the sputtering yield for silver. (author)

  12. Low-temperature thermionics in space nuclear power systems with the safe-type fast reactor

    International Nuclear Information System (INIS)

    Zrodnikov, A.V.; Yarygin, V.I.; Lazarenko, G.E.; Zabudko, A.N.; Ovcharenko, M.K.; Pyshko, A.P.; Mironov, V.S.; Kuznetsov, R.V.

    2007-01-01

    The potentialities of the use of the low-temperature thermionic converters (TIC) with the emitter temperature ≤ 1500 K in the space nuclear power system (SNPS) with the SAFE-type (Safe Affordable Fission Engine) fast reactor proposed and developed by common efforts of American experts have been considered. The main directions of the 'SAFE-300-TEG' SNPS (300 kW(thermal)) design update by replacing the thermoelectric converters with the low-temperature high-performance thermionic converters (with the barrier index V B ≤ 1.9 eV and efficiency ≥ 10%) meant for a long-term operation (5 years at least) as the components of the SAFE-300-TIC SNPS for a Lunar base have been discussed. The concept of the SNPS with the SAFE-type fast reactor and low-temperature TICs with specific electric power of about 1.45 W/cm 2 as the components of the SAFE-300-TIC system meeting the Nasa's initial requirements to a Lunar base with the electric power demand of about 30 kW(electrical) for robotic mission has been considered. The results, involving optimization and mass-and-size estimation, show that the SAFE-300-TIC system meets the initial requirements by Nasa to the lunar base power supply. The main directions of the system update aimed at the output electric power increase up to 100 kW(electrical) have also been presented. (authors)

  13. Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector

    Science.gov (United States)

    Olawole, Olukunle C.; De, Dilip Kumar

    2018-01-01

    Thermionic energy conversion (TEC) using nanomaterials is an emerging field of research. It is known that graphene can withstand temperatures as high as 4600 K in vacuum, and it has been shown that its work function can be engineered from a high value (for monolayer/bilayer) of 4.6 eV to as low as 0.7 eV. Such attractive electronic properties (e.g., good electrical conductivity and high dielectric constant) make engineered graphene a good candidate as an emitter and collector in a thermionic energy converter for harnessing solar energy efficiently. We have used a modified Richardson-Dushman equation and have adopted a model where the collector temperature could be controlled through heat extraction in a calculated amount and a magnet can be attached on the back surface of the collector for future control of the space-charge effect. Our work shows that the efficiency of solar energy conversion also depends on power density falling on the emitter surface, and that a power conversion efficiency of graphene-based solar TEC as high as 55% can be easily achieved (in the absence of the space-charge effect) through proper choice of work functions, collector temperature, and emissivity of emitter surfaces. Such solar energy conversion would reduce our dependence on silicon solar panels and offers great potential for future renewable energy utilization.

  14. Analysis of instability growth and collisionless relaxation in thermionic converters using 1-D PIC simulations

    International Nuclear Information System (INIS)

    Kreh, B.B.

    1994-12-01

    This work investigates the role that the beam-plasma instability may play in a thermionic converter. The traditional assumption of collisionally dominated relaxation is questioned, and the beam-plasma instability is proposed as a possible dominant relaxation mechanism. Theory is developed to describe the beam-plasma instability in the cold-plasma approximation, and the theory is tested with two common Particle-in-Cell (PIC) simulation codes. The theory is first confirmed using an unbounded plasma PIC simulation employing periodic boundary conditions, ES1. The theoretically predicted growth rates are on the order of the plasma frequencies, and ES1 simulations verify these predictions within the order of 1%. For typical conditions encountered in thermionic converters, the resulting growth period is on the order of 7 x 10 -11 seconds. The bounded plasma simulation PDP1 was used to evaluate the influence of finite geometry and the electrode boundaries. For this bounded plasma, a two-stream interaction was supported and resulting in nearly complete thermalization in approximately 5 x 10 -10 seconds. Since the electron-electron collision rate of 10 9 Hz and the electron atom collision rate of 10 7 Hz are significantly slower than the rate of development of these instabilities, the instabilities appear to be an important relaxation mechanism

  15. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  16. Low-damage high-throughput grazing-angle sputter deposition on graphene

    International Nuclear Information System (INIS)

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-01-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

  17. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Science.gov (United States)

    Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

    2013-07-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  18. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Science.gov (United States)

    Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

    2018-06-01

    This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

  19. Conceptual engineering design study of thermionic topping of fossil power plants

    Energy Technology Data Exchange (ETDEWEB)

    1978-02-15

    Primary objectives of this study are to investigate alternative design concepts of thermal coupling of thermionic energy converters (TECs) to the steam cycle and the mechanical and electrical aspects of integrating TEC design into the steam power station. The specific tasks include: (1) evaluate design concepts of TEC topping of solvent refined liquified coal-fired steam power plants, with main emphasis devoted to thermal, mechanical, and electrical design aspects. (2) Develop preliminary conceptual design of a modular TEC assembly. (3) Develop preliminary cost estimates of the design modification to a liquified coal-fired steam power plant with TEC topping. (4) Provide support to Thermo Electron Corporation in planning TEC hardware testing. Results are presented in detail.

  20. Effects of ion sputtering on semiconductor surfaces

    International Nuclear Information System (INIS)

    McGuire, G.E.

    1978-01-01

    Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

  1. Tests of a new axial sputtering technique in an ECRIS

    International Nuclear Information System (INIS)

    Scott, R.; Pardo, R.; Vondrasek, R.

    2012-01-01

    Axial and radial sputtering techniques have been used over the years to create beams from an ECRIS at multiple accelerator facilities. Operational experience has shown greater beam production when using the radial sputtering method versus axial sputtering. At Argonne National Laboratory, previous work with radial sputtering has demonstrated that the position of the sputter sample relative to the plasma chamber wall influences sample drain current, beam production and charge state distribution. The possibility of the chamber wall acting as a ground plane which influences the sputtering of material has been considered, and an attempt has been made to mimic this possible ground plane effect with a coaxial sample introduced from the injection end. Results of these tests will be shown as well as comparisons of outputs using the two methods. The paper is followed by the associated poster. (authors)

  2. HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2014-03-24

    Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

  3. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

    1993-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  4. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

    1994-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  5. End point detection in ion milling processes by sputter-induced optical emission spectroscopy

    International Nuclear Information System (INIS)

    Lu, C.; Dorian, M.; Tabei, M.; Elsea, A.

    1984-01-01

    The characteristic optical emission from the sputtered material during ion milling processes can provide an unambiguous indication of the presence of the specific etched species. By monitoring the intensity of a representative emission line, the etching process can be precisely terminated at an interface. Enhancement of the etching end point is possible by using a dual-channel photodetection system operating in a ratio or difference mode. The installation of the optical detection system to an existing etching chamber has been greatly facilitated by the use of optical fibers. Using a commercial ion milling system, experimental data for a number of etching processes have been obtained. The result demonstrates that sputter-induced optical emission spectroscopy offers many advantages over other techniques in detecting the etching end point of ion milling processes

  6. Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

    International Nuclear Information System (INIS)

    Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

    2012-01-01

    Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

  7. Sputtering of sub-micrometer aluminum layers as compact, high-performance, light-weight current collector for supercapacitors

    Science.gov (United States)

    Busom, J.; Schreiber, A.; Tolosa, A.; Jäckel, N.; Grobelsek, I.; Peter, N. J.; Presser, V.

    2016-10-01

    Supercapacitors are devices for rapid and efficient electrochemical energy storage and commonly employ carbon coated aluminum foil as the current collector. However, the thickness of the metallic foil and the corresponding added mass lower the specific and volumetric performance on a device level. A promising approach to drastically reduce the mass and volume of the current collector is to directly sputter aluminum on the freestanding electrode instead of adding a metal foil. Our work explores the limitations and performance perspectives of direct sputter coating of aluminum onto carbon film electrodes. The tight and interdigitated interface between the metallic film and the carbon electrode enables high power handling, exceeding the performance and stability of a state-of-the-art carbon coated aluminum foil current collector. In particular, we find an enhancement of 300% in specific power and 186% in specific energy when comparing aluminum sputter coated electrodes with conventional electrodes with Al current collectors.

  8. The Kansas State University revolving sputter source

    International Nuclear Information System (INIS)

    Tipping, T.N.

    1989-01-01

    It has been that the perfect ion source is one which runs in a very stable mode, runs continuously, and has the ability to change ion species without sacrificing the previous two requirements. This paper presents an approximation to the perfect ion source, the KSU Revolving Sputter Source. The source consists of an Aarhus-geometry sputter source with the addition of a rotating wheel which holds eight sputter cathodes. The wheel consists of a front plate with eight fixed Macor insulators and a back plate with eight Macor insulators held in place by the tension of eight springs. The cathode assembly consists of a copper cartridge with a threaded rod on one end and a sputter cathode with a threaded hole on the back. The cathode is screwed onto the cartridge and the whole assembly may be loaded into the wheel. A small spring on the side of the cartridge holds the assembly in the wheel

  9. Fabrication of black-gold coatings by glancing angle deposition with sputtering

    Directory of Open Access Journals (Sweden)

    Alan Vitrey

    2017-02-01

    Full Text Available The fabrication of black-gold coatings using sputtering is reported here. Glancing angle deposition with a rotating substrate is needed to obtain vertical nanostructures. Enhanced light absorption is obtained in the samples prepared in the ballistic regime with high tilt angles. Under these conditions the diameter distribution of the nanostructures is centered at about 60 nm and the standard deviation is large enough to obtain black-metal behavior in the visible range.

  10. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  11. Faraday screen sputtering on TPX

    International Nuclear Information System (INIS)

    Ehst, D.A.

    1994-12-01

    The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author's emphasis will be on both impurity generation as a possible source of increased Z eff , and also on actual erosion-lifetime of the materials under worst case conditions

  12. Progress in radiation immune thermionic integrated circuits

    International Nuclear Information System (INIS)

    Lynn, D.K.; McCormick, J.B.

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs

  13. Progress in radiation immune thermionic integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Lynn, D.K.; McCormick, J.B. (comps.)

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

  14. Pulsed dc self-sustained magnetron sputtering

    International Nuclear Information System (INIS)

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-01-01

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

  15. Energy balance measurements for the determination of physical and technical operation parameters of thermionic converters

    International Nuclear Information System (INIS)

    Ritz, K.

    1975-01-01

    An introduction into the fundamental theoretical principles of the thermionic Cs converter is followed by the set-up of a special measuring converter as proposed by J. Bohdansky which permits the defined setting of the electrode distance under service conditions. Measurements thus carried out present quantitative data on efficiency, on energy transfer between the electrodes by means of radiation and heat transfer, and on the actual collector potential, the latter which surprisingly shows a distance dependency. (orig./GG) [de

  16. Simulation of carbon sputtering due to molecular hydrogen impact

    International Nuclear Information System (INIS)

    Laszlo, J.

    1993-01-01

    Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

  17. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    Energy Technology Data Exchange (ETDEWEB)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  18. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  19. Control and enhancement of the oxygen storage capacity of ceria films by variation of the deposition gas atmosphere during pulsed DC magnetron sputtering

    Science.gov (United States)

    Eltayeb, Asmaa; Vijayaraghavan, Rajani K.; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A.; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen

    2015-04-01

    In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4+ to Ce3+ and indicates a chemically reduced state of CeO2 due to the formation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) × 10-4 F and (4.3 ± 0.5) × 10-4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere.

  20. Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

    Energy Technology Data Exchange (ETDEWEB)

    Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

    2013-09-15

    Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

  1. Responses and mechanisms of positive electron affinity molecules in the N2 mode of the thermionic ionization detector and the electron-capture detector

    International Nuclear Information System (INIS)

    Jones, C.S.

    1989-01-01

    Very little knowledge has been acquired in the past on the mechanistic pathway by which molecules respond in the N 2 mode of the thermionic ionization detector. An attempt is made here to elucidate the response mechanism of the detector. The basic response mechanisms are known for the electron capture detector, and an attempt is made to identify the certain mechanism by which selected molecules respond. The resonance electron capture rate constant has been believed to be temperature independent, and investigations of the temperature dependence of electron capture responses are presented. Mechanisms for the N 2 mode of the thermionic ionization detector have been proposed by examining the detector response to positive electron affinity molecules and by measurement of the ions produced by the detector. Electron capture mechanisms for selected molecules have been proposed by examining their temperature dependent responses in the electron capture detector and negative ion mass spectra of the samples. In studies of the resonance electron capture rate constant, the relative responses of selected positive electron affinity molecules and their temperature dependent responses were investigated. Positive electron affinity did not guarantee large responses in the N 2 mode thermionic ionization detector. High mass ions were measured following ionization of samples in the detector. Responses in the electron capture detector varied with temperature and electron affinity

  2. Transition to chaos in periodically driven thermionic diodes at low pressure

    International Nuclear Information System (INIS)

    Klinger, T.; Timm, R.; Piel, A.

    1992-01-01

    The static I(U) characteristic of thermionic diodes at mbar pressures shows a large hysteresis, which describes the transition from the 'anode-glow-mode' (AGM), with essentially negative plasma potential, to the 'temperature-limited-mode' (TLM), with positive plasma potential. Many features of these modes are also found in magnetic-box discharges with filament cathodes at pressures of 10 -2 -10 -1 Pa. Although these two pressure regimes are basically different concerning the transport properties (diffusion vs. free streaming), the elementary processes that establish the AGM in the low pressure regime are very similar to the high pressure regime. Ions are produced in that part of the anode sheath where the potential exceeds the ionization energy. The production rate is enhanced by multiple reflections of electrons between the magnetic fields of the permanent magnet array at the anode and the repulsive potential of the cathode plasma. Although the mean free path for charge exchange or elastic collisions substantially exceeds the anode-cathode distance, some few ions are stopped and trapped within the potential well of the virtual cathode. This accumulation of ions forms a cathodic plasma, which is essentially at cathode potential. Plasma formation in the anode sheath is suppressed as long as the ion production time is larger than the ion transit time through the sheath. These model ideas are supported by 1d-Particle-in-cell simulations using a modified PDP1-code. The AGM is attractive for studies of nonlinear dynamics because of its feedback processes and oscillations, which occur close to the hysteresis point. (author) 7 refs., 3 figs

  3. Modelling of low energy ion sputtering from oxide surfaces

    International Nuclear Information System (INIS)

    Kubart, T; Nyberg, T; Berg, S

    2010-01-01

    The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

  4. On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

    International Nuclear Information System (INIS)

    Chadderton, L.T.

    1977-01-01

    It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

  5. RF sputtering: A viable tool for MEMS fabrication

    Indian Academy of Sciences (India)

    being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

  6. Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections

    Energy Technology Data Exchange (ETDEWEB)

    Onishi, Takashi [Advanced Technology Information Center, Shinko Research Co., Ltd., 2-7, 4-Chome, Iwaya-Nakamachi, Nada-ku, Kobe 657-0845 (Japan); Mizuno, Masao [Technical Development Group, Electronics Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271 (Japan); Yoshikawa, Tetsuya; Munemasa, Jun [Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago 676-8670 (Japan); Mizuno, Masataka; Kihara, Teruo; Araki, Hideki [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita 565-0871 (Japan); Shirai, Yasuharu [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2011-08-01

    An attempt to improve the reflow characteristics of sputtered Cu films was made by alloying the Cu with various elements. We selected Y, Sb, Nd, Sm, Gd, Dy, In, Sn, Mg, and P for the alloys, and ''the elasto-plastic deformation behavior at high temperature'' and ''the filling level of Cu into via holes'' were estimated for Cu films containing each of these elements. From the results, it was found that adding a small amount of Sb or Dy to the sputtered Cu was remarkably effective in improve the reflow characteristics. The microstructure and imperfections in the Cu films before and after high-temperature high-pressure annealing were investigated by secondary ion micrographs and positron annihilation spectroscopy. The results imply that the embedding or deformation mechanism is different for the Cu-Sb alloy films compared to the Cu-Dy alloy films. We consider that the former is embedded by softening or deformation of the Cu matrix, which has a polycrystalline structure, and the latter is embedded by grain boundary sliding.

  7. Transient and steady-state analyses of an electrically heated Topaz-II Thermionic Fuel Element

    International Nuclear Information System (INIS)

    El-Genk, M.S.; Xue, H.

    1992-01-01

    Transient and steady-state analyses of electrically heated, Thermionic Fuel Elements (TFEs) for Topaz-II space power system are performed. The calculated emitter and collector temperatures, load electric power and conversion efficiency are in good agreement with reported data. In this paper the effects or Cs pressure, thermal power input, and load resistance on the steady-state performance of the TFE are also investigated. In addition, the thermal response of the ZrH moderator during a startup transient and following a change in the thermal power input is examined

  8. Sputtering mechanisms of polycrystalline platinum by low energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    1999-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  9. Development and fabrication of insulator seals for thermionic diodes

    Science.gov (United States)

    Poirier, V. L.

    1972-01-01

    Eight different types of cermet seals for thermionic diodes were investigated: (1) 1 micron Al2O3 with Nb spheres; (2) 200 A Al2O3 with Nb spheres; (3) 1 micron Al2O3 with Nb 1% Zr spheres; (4) 200 A Al2O3 with Nb 1% Zr spheres; (5) Pure Y2O3 with Nb 1% Zr spheres; (6) Y2O3 3% ZrO2 with Nb 1% Zr spheres; (7) Y2O3 10% ZrO2 with Nb 1% Zr spheres; and (8) ZrO2 12% Y2O3 with Nb 1% Zr spheres. Investigations were made to determine the most favorable fabrication techniques and the effect of the bonding cycle, (length of bonding time and shutdown sequences). The analysis of the seals included tensile test, vacuum test, electrical test and metallurgical examination. At the conclusion of the development phase, 36 seals were fabricated for delivery for evaluation.

  10. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    Science.gov (United States)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  11. Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi, E-mail: hamaguch@ppl.eng.osaka-u.ac.jp [Center for Atomic and Molecular Technologies, Osaka University, Yamadaoka 2-1, Suita 565-0871 (Japan); Fukasawa, Masanaga; Nagahata, Kazunori; Tatsumi, Tetsuya [Device and Material R& D Group, RDS Platform, Sony Corporation, Kanagawa 243-0014 (Japan)

    2015-11-15

    Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

  12. Depth resolution and preferential sputtering in depth profiling of sharp interfaces

    International Nuclear Information System (INIS)

    Hofmann, S.; Han, Y.S.; Wang, J.Y.

    2017-01-01

    Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

  13. Depth resolution and preferential sputtering in depth profiling of sharp interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, S. [Max Planck Institute for Intelligent Systems (formerly MPI for Metals Research), Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Han, Y.S. [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China)

    2017-07-15

    Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

  14. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  15. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  16. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    Science.gov (United States)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  17. Investigation of ion sputtering for eutectic Cu-37 at% Ag alloys

    International Nuclear Information System (INIS)

    Wang Zhenxia; Pan Jisheng; Zhang Jiping; Tao Zhenlan; Zhu Fuying; Zhao Lie; Zhang Huiming

    1994-01-01

    Angular distributions of sputtered atoms and the phenomenon of element locally rich relative to micro-topographic feature (ELR-MTF) of sputtered target surface have been investigated for Cu-37 at% Ag alloys by means of RBS, SEM and EPMA measurements. In the paper,emphasis will be put on the correlation between surface topography caused by Ar + ion bombardment with different doses and angular distribution of sputtered atoms ejecting from various micro-zones at topographical surface during sputtering. The experiment result was explained with the so-called ELR-MTF model which can qualitatively interpret the shape of the angular distributions and the variation of the preferential sputtering curves

  18. Nanopatterning of swinging substrates by ion-beam sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

    2016-05-28

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  19. Nanopatterning of swinging substrates by ion-beam sputtering

    International Nuclear Information System (INIS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-01-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  20. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  1. Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Cumpson, Peter J.; Portoles, Jose F.; Barlow, Anders J.; Sano, Naoko [National EPSRC XPS User' s Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

    2013-09-28

    Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

  2. Sputtering as a means of depth profiling

    International Nuclear Information System (INIS)

    Whitton, J.L.

    1978-01-01

    Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

  3. Quantitative sputter profiling at surfaces and interfaces

    International Nuclear Information System (INIS)

    Kirschner, J.; Etzkorn, H.W.

    1981-01-01

    The key problem in quantitative sputter profiling, that of a sliding depth scale has been solved by combined Auger/X-ray microanalysis. By means of this technique and for the model system Ge/Si (amorphous) the following questions are treated quantitatively: shape of the sputter profiles when sputtering through an interface and origin of their asymmetry; precise location of the interface plane on the depth profile; broadening effects due to limited depth of information and their correction; origin and amount of bombardment induced broadening for different primary ions and energies; depth dependence of the broadening, and basic limits to depth resolution. Comparisons are made to recent theoretical calculations based on recoil mixing in the collision cascade and very good agreement is found

  4. X-ray photoelectron spectroscopy study of radiofrequency-sputtered refractory compound steel interfaces

    Science.gov (United States)

    Wheeler, D. R.; Brainard, W. A.

    1978-01-01

    Radiofrequency sputtering was used to deposit Mo2C, Mo2B5, and MoSi2 coatings on 440C steel substrates. Both sputter etched and preoxidized substrates were used, and the films were deposited with and without a substrate bias of -300 V. The composition of the coatings was measured as a function of depth by X-ray photoelectron spectroscopy combined with argon ion etching. In the interfacial region there was evidence that bias produced a graded interface in Mo2B5 but not in Mo2C. Oxides of iron and of all film constituents except carbon were presented in all cases but the iron oxide concentration was higher and the layer thicker on the preoxidized substrates. The film and iron oxides were mixed in the MoSi2 and Mo2C films but layered in the Mo2B5 film. The presence of mixed oxides correlates with enhanced film adhesion.

  5. The corrosion and passivity of sputtered Mg–Ti alloys

    International Nuclear Information System (INIS)

    Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2016-01-01

    Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  6. Ambient-temperature fabrication of microporous carbon terminated with graphene walls by sputtering process for hydrogen storage applications

    International Nuclear Information System (INIS)

    Banerjee, Arghya Narayan; Joo, Sang Woo; Min, Bong-Ki

    2013-01-01

    similar graphitic carbon nanostructures and may enhance the hydrogen storage capacity for energy-related applications. - Highlights: • Graphitic microporous carbon formation from amorphous carbon by sputtering • A dual, simultaneous effect of activation and crystallization is manifested. • The number of graphene wall formation is dependent on sputtering voltages. • Sputtering plasma manifests activation via dry-etching. • Charged nanoparticle/ion bombardment provides knock-on graphitization

  7. INFLUENCE OF LOW-ENERGY AR-SPUTTERING ON THE ELECTRONIC-PROPERTIES OF INAS-BASED QUANTUM-WELL STRUCTURES

    NARCIS (Netherlands)

    Magnee, P.H.C.; den Hartog, S.G.; Wees, B.J.van; Klapwijk, T.M; van de Graaf, W.; Borghs, G.

    1995-01-01

    The influence of low energy (80-500 eV) Ar-ion milling cleaning techniques on InAs based quantum well structures is investigated. It is found that both etching with a Kaufmann source and sputter-etching with a rf-plasma enhances the electron density and reduces the mobility. An anneal at 180 degrees

  8. Communication: Effects of thermionic-gun parameters on operating modes in ultrafast electron microscopy

    Directory of Open Access Journals (Sweden)

    Erik Kieft

    2015-09-01

    Full Text Available Ultrafast electron microscopes with thermionic guns and LaB6 sources can be operated in both the nanosecond, single-shot and femtosecond, single-electron modes. This has been demonstrated with conventional Wehnelt electrodes and absent any applied bias. Here, by conducting simulations using the General Particle Tracer code, we define the electron-gun parameter space within which various modes may be optimized. The properties of interest include electron collection efficiency, temporal and energy spreads, and effects of laser-pulse duration incident on the LaB6 source. We find that collection efficiencies can reach 100% for all modes, despite there being no bias applied to the electrode.

  9. The microstructure and properties of titanium dioxide films synthesized by unbalanced magnetron sputtering

    International Nuclear Information System (INIS)

    Leng, Y.X.; Chen, J.Y.; Yang, P.; Sun, H.; Huang, N.

    2007-01-01

    In this work, titanium oxide films were deposited on Ti6Al4V and Si (1 0 0) by DC unbalanced magnetron sputtering method at different oxygen pressure. X-ray diffraction (XRD), microhardness tests, pin-on-disk wear experiments, surface contact angle tests and platelet adhesion investigation were conducted to evaluate the properties of the films. The corrosion behavior of titanium dioxide films was characterized by potentiodynamic polarization. The results showed that titanium oxide films deposited by unbalance magnetron sputtering were compact and could obviously enhance microhardness, wear resistance of titanium alloy substrate. Potentiodynamic polarization curves showed that Ti-6Al-4V deposited with titanium dioxide films had lower dissolution currents than that of the uncoated one. The results of in vitro hemocompatibility analyses indicated that the blood compatibility of the titanium dioxide films with bandgap 3.2 eV have better blood compatibility

  10. Effect of sputtering on self-damaged ITER-grade tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Voitsenya, V.S., E-mail: voitseny@ipp.kharkov.ua [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Bardamid, A.F. [Taras Shevchenko National University, 01033 Kiev (Ukraine); Belyaeva, A.I. [National Technical University “Kharkov Polytechnical Institute”, 61002 Kharkov (Ukraine); Bondarenko, V.N.; Skoryk, O.O.; Shtan’, A.F.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Sterligov, V.A. [Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kiev (Ukraine); Tyburska-Püschel, B. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany)

    2014-10-15

    Simulation of neutron irradiation and sputtering on ITER-grade tungsten was studied. The effects of neutron-induced displacement damage have been simulated by irradiation of tungsten target with W{sup 6+} ions of 20 MeV energy. Bombardment by Ar{sup +} ions with energy 600 eV was used as imitation of impact of charge exchange atoms in ITER. The sputtering process was interrupted to perform in between measurements of the optical properties of the eroded surface and the mass loss. After sputtering was finished, the surface was thoroughly investigated by different methods for characterizing the surface relief developed due to sputtering. The damaging to, at least, the level that would be achieved in ITER does not lead to a decisive additional contribution to the processes under impact of charge exchange atoms only.

  11. Sputtering of Au induced by single Xe ion impacts

    International Nuclear Information System (INIS)

    Birtcher, R. C.; Donnelly, S. E.

    1999-01-01

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

  12. AFM characterization of nonwoven material functionalized by ZnO sputter coating

    International Nuclear Information System (INIS)

    Deng Bingyao; Yan Xiong; Wei Qufu; Gao Weidong

    2007-01-01

    Sputter coatings provide new approaches to the surface functionalization of textile materials. In this study, polyethylene terephthalate (PET) nonwoven material was used as a substrate for creating functional nanostructures on the fiber surfaces. A magnetron sputter coating was used to deposit functional zinc oxide (ZnO) nanostructures onto the nonwoven substrate. The evolution of the surface morphology of the fibers in the nonwoven web was examined using atomic force microscopy (AFM). The AFM observations revealed a significant difference in the morphology of the fibers before and after the sputter coating. The AFM images also indicated the effect of the sputtering conditions on the surface morphology of the fibers. The increase in the sputtering time led to the growth of the ZnO grains on the fiber surfaces. The higher pressure in the sputtering chamber could cause the formation of larger grains on the fiber surfaces. The higher power used also generated larger grains on the fiber surfaces

  13. Arc generation from sputtering plasma-dielectric inclusion interactions

    International Nuclear Information System (INIS)

    Wickersham, C.E. Jr.; Poole, J.E.; Fan, J.S.

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al 2 O 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λ d , is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λ d and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

  14. Monte Carlo calculations of ligth-ion sputtering as a function of the incident angle

    International Nuclear Information System (INIS)

    Haggmark, L.G.; Biersack, J.P.

    1980-01-01

    The sputtering of metal surfaces by light ions has been studied as a function of the incident angle using an extension of the TRIM Monte Carlo computer program. Sputtering yields were calculated at both normal and oblique angles of incidence for H, D, T, and 4 He impinging on Ni, Mo, and Au targets with energies <= 10 keV. Direct comparisons are made with the most recent experimental and theoretical results. There is generally good agreement with the experimental data although our calculated maximum in the yield usually occurs at a smaller incident angle, measured from the surface normal. The enhancement of the yield at large incident angles over that at normal incidence is observed to be a complex function of the incident ion's energy and mass and the target's atomic weight and surface binding energy. (orig.)

  15. Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

    International Nuclear Information System (INIS)

    Wernsman, Bernard

    1997-01-01

    A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

  16. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    Energy Technology Data Exchange (ETDEWEB)

    Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

    2016-10-15

    Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

  17. Evaluation of residual stress in sputtered tantalum thin-film

    Energy Technology Data Exchange (ETDEWEB)

    Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

    2016-05-15

    Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

  18. UV-Enhanced Ethanol Sensing Properties of RF Magnetron-Sputtered ZnO Film.

    Science.gov (United States)

    Huang, Jinyu; Du, Yu; Wang, Quan; Zhang, Hao; Geng, Youfu; Li, Xuejin; Tian, Xiaoqing

    2017-12-26

    ZnO film was deposited by the magnetron sputtering method. The thickness of ZnO film is approximately 2 μm. The influence of UV light illumination on C₂H₅OH sensing properties of ZnO film was investigated. Gas sensing results revealed that the UV-illuminated ZnO film displays excellent C₂H₅OH characteristics in terms of high sensitivity, excellent selectivity, rapid response/recovery, and low detection limit down to 0.1 ppm. The excellent sensing performance of the sensor with UV activation could be attributed to the photocatalytic oxidation of ethanol on the surface of the ZnO film, the planar film structure with high utilizing efficiency of UV light, high electron mobility, and a good surface/volume ratio of of ZnO film with a relatively rough and porous surface.

  19. Secondary ion formation during electronic and nuclear sputtering of germanium

    Science.gov (United States)

    Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

    2018-06-01

    Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

  20. Comparison between arc drops in ignited thermionic converters with and without ion reflections at the emitter

    International Nuclear Information System (INIS)

    Lundgren, L.

    1985-01-01

    The output performance of two thermionic energy converters is compared. One converter has a normal emitter, working with zero field at the emitter which is close to the optimum working point, and the other has a low work function emitter and ion reflection at the emitter. A simple model of the plasma and the sheaths shows that a converter working with a low work function emitter and ion reflections gives a worse performance than a similar converter with a normal emitter

  1. Energy sharing and sputtering in low-energy collision cascades

    International Nuclear Information System (INIS)

    Weller, R.A.; Weller, M.R.

    1982-01-01

    Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

  2. Magnetospheric ion sputtering and water ice grain size at Europa

    Science.gov (United States)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  3. Photonometers for coating and sputtering machines

    Science.gov (United States)

    Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

    2013-04-01

    The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  4. High-frequency cold ignition of fluorescent lamps

    International Nuclear Information System (INIS)

    Haverlag, M.; Sormani, J.; Heuvelmans, J.; Geven, A.; Kaldenhoven, L.; Heijne, G.; Kraus, A.

    2002-01-01

    Experimental and theoretical investigations have been performed on the ignition process of low-pressure mercury-noble gas fluorescent lamps operating on a 50 kHz electronic driver circuit. In case the electrodes of the lamp are not heated prior to the ignition process, the ignition process can, under certain conditions, lead to premature fracture of the coiled-coil electrode, which means that the lamp ceases to operate before the emitter is consumed completely. Experimental studies of this process have shown that the erosion process responsible for this premature end-of-life consists of localized sputtering of the tungsten electrode by energetic ions from the glow discharge that is present during the ignition process. In order to understand the basic process that leads to localized sputtering of the electrodes in a glow discharge, a simple glow-discharge fluid model, in combination with a finite-element model of the heat transport in the electrode, has been built. The model shows that thermionic emission can supply a significant fraction of the electrons already at temperatures far below the normal operating temperature in fluorescent lamps. This thermionic emission is responsible for a contraction process. After the beginning of the discharge contraction it takes typically a few milliseconds before the glow-to-arc transition is observed in the lamp voltage and the normal electrode operating temperature is reached. During this time localized sputtering takes place, which eventually leads to coil fracture. (author)

  5. The effect of sputtering gas pressure on the structure and optical properties of MgNiO films grown by radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wuze; Jiao, Shujie, E-mail: shujiejiao@gmail.com; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Yu, Qingjiang; Li, Hongtao

    2017-05-31

    Highlights: • MgNiO thin films were fabricated by radio frequency magnetron sputtering. • The structure and optical properties of MgNiO films were studied. • The mechanism of phase separation was discussed in detail. • The effect of different sputtering pressure also was discussed. - Abstract: In this study, MgNiO thin films were grown on quartz substrates by radio frequency (RF) magnetron sputtering. The influence of different sputtering pressures on the crystalline and optical properties of MgNiO thin films has been studied. X-ray diffraction measurement indicates that the MgNiO films are cubic structure with (200) preferred orientation. UV–vis transmission spectra show that all the MgNiO thin films show more than 75% transmission at visible region, and the absorption edges of all thin films locate at solar-blind region (220 nm–280 nm). The lattice constant and Mg content of MgNiO samples were calculated using X-ray diffraction and transmission spectra data. The phase separation is observed both in the X-ray diffraction patterns and transmission spectra, and the phase separation is studied in detail based on the crystal growth theory and sputtering process.

  6. Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)

    International Nuclear Information System (INIS)

    Burnett, J.W.; Biersack, J.P.; Gruen, D.M.; Joergensen, B.; Krauss, A.R.; Pellin, M.J.; Schweitzer, E.L.; Yates, J.T. Jr.; Young, C.E.

    1987-01-01

    The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar + . The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transport of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab

  7. Crystalline silicon films grown by pulsed dc magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reinig, Peter; Fenske, Frank; Fuhs, Walther; Selle, Burkhardt [Hahn-Meitner-Institut Berlin, Abt. Silizium-Photovoltaik, Kekulestr. 5, D-12489 Berlin (Germany)

    2002-04-01

    Pulsed dc magnetron sputtering is used as a novel method for the deposition of crystalline silicon films on glass substrates. Hydrogen-free polycrystalline Si-films are deposited with high deposition rates at temperatures of 400-450 C and pulse frequencies f in the range 0-250 kHz. Strong preferential (100) orientation of the crystallites is observed with increasing f. High frequency and similarly high negative substrate bias cause an increase of the Ar content and an enhancement of structural disorder. Measurements of the transient floating potential suggest that the observed structural effects are related to bombardment of the growing film by Ar{sup +} ions of high energy.

  8. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    International Nuclear Information System (INIS)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-01-01

    The (Ba, Sr) TiO 3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 deg. C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 deg. C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO 3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO 3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 deg. C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 deg. C. The (Ba, Sr) TiO 3 film deposited at higher temperatures (upwards of 400 deg. C) shows preferred orientation, while the film deposited at 330 deg. C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO 3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO 3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO 3 film on the ruthenium electrode at low temperatures of less than 400 deg. C

  9. Low temperature rf sputtering deposition of (Ba, Sr) TiO3 thin film with crystallization enhancement by rf power supplied to the substrate

    Science.gov (United States)

    Yoshimaru, Masaki; Takehiro, Shinobu; Abe, Kazuhide; Onoda, Hiroshi

    2005-05-01

    The (Ba, Sr) TiO3 thin film deposited by radio frequency (rf) sputtering requires a high deposition temperature near 500 °C to realize a high relative dielectric constant over of 300. For example, the film deposited at 330 °C contains an amorphous phase and shows a low relative dielectric constant of less than 100. We found that rf power supplied not only to the (Ba, Sr) TiO3 sputtering target, but also to the substrate during the initial step of film deposition, enhanced the crystallization of the (Ba, Sr) TiO3 film drastically and realized a high dielectric constant of the film even at low deposition temperatures near 300 °C. The 50-nm-thick film with only a 10 nm initial layer deposited with the substrate rf biasing is crystallized completely and shows a high relative dielectric constant of 380 at the deposition temperature of 330 °C. The (Ba, Sr) TiO3 film deposited at higher temperatures (upwards of 400 °C) shows preferred orientation, while the film deposited at 330 °C with the 10 nm initial layer shows a preferred orientation on a -oriented ruthenium electrode. The unit cell of (Ba, Sr) TiO3 (111) plane is similar to that of ruthenium (001) plane. We conclude that the rf power supplied to the substrate causes ion bombardments on the (Ba, Sr) TiO3 film surface, which assists the quasiepitaxial growth of (Ba, Sr) TiO3 film on the ruthenium electrode at low temperatures of less than 400 °C.

  10. High performance emitter for thermionic diode obtained by chemical vapor deposition

    International Nuclear Information System (INIS)

    Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

    1973-01-01

    Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

  11. Thermionic RF Gun and Linac Pre-Injector for SPEAR3

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.

    2003-08-11

    Preparations are underway to upgrade the Spear2 to the third generation light source. Installation of all the subsystems will start in April 2003. Although the Spear3 RF system is entirely different from the present form, the pre-injector gun/linac and booster synchrotron will remain the same even after the upgrade. The thermionic rf gun reliability and stability are to be improved to inject 500 mA of stored current in shortest possible time. When a top-up mode is enforced, where the stored beam decay is replenished to maintain the constant current and thus constant light intensity, the Spear3 will take injection every few minutes. In that case the gun, linac, and booster must stay on at all times. In this report we will describe some improvements made on the gun and linac in the recent past, as well as their present performance and future upgrade to be made.

  12. Generation of multi-branch beam with thermionic gun for the Japan linear collider

    International Nuclear Information System (INIS)

    Naito, T.; Akemoto, M.; Matsumonto, H.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

    1992-01-01

    We report on the development of a thermionic gun that is capable of producing multi-bunch beam to be used at the KEK Accelerator Test Facility for the Japan Linear Collider project. Two types of grid pulse generators have been developed. One is an avalanche pulse generator. A Y-646E cathode was successfully operated to generate double-bunch beam with a pulse width shorter than 700 ps, bunch spacing 1.4 ns, and a peak current 4.3 A. The other grid pulse generator is a fast ECL circuit with an RF power amplifier. Generation of 20-pulse trains with 2.1 ns time spacing has been demonstrated. (Author) 4 refs., 6 figs

  13. Reflector drums as control mechanism for craft thermionic reactors with constant emitter heating containing U-233 as fuel and beryllium as moderator

    International Nuclear Information System (INIS)

    Sahin, S.; Selvi, S.

    1980-01-01

    The suitability of borated reflector drums has been investigated and shown as a control mechanism for space craft thermionic reactors with constant emitter heating using U-233 as fuel and beryllium to be moderator, mainly due to their extremce compactness and their very soft neutron sepctrum. The achievable change in ksub(eff) allows long-term control operation with success. The use of reflector drums keeps the cone diameter and the mass of the radiation shield on minimum. The distortion of the emitter heating field remains under acceptable tolerances, mainly due to the enhanced neutron production at the outer core region and the remaining reflector part between the boron layer and the core. All neutron physics calculations have been carried out using the multigroup Ssub(N) methods. Three data groups for r-theta-calculations in S 4 -P 1 approximation (16 space angles) have been evaluated from a 123-energy-groups data library using transport theoretical methods. (orig.) [de

  14. Shape memory effect and microstructures of sputter-deposited Cu-Al-Ni films

    International Nuclear Information System (INIS)

    Minemura, T.; Andoh, H.; Kita, Y.; Ikuta, I.

    1985-01-01

    The shape memory effect has been found in many alloy systems which exhibit a thermoelastic martensite transformation. Cu-Al-Ni alloys exhibit an excellent shape memory effect in single crystalline states, but they have not yet been commercially used due to their brittle fracture along the grain boundaries in polycrystalline states. This letter reports the shape memory effect and microstructures of the sputter-deposited Cu-Al-Ni films. Cu-14%Al-4%Ni alloy ingot was prepared. A target for sputter deposition was cut from the ingot. Aluminium foils (20 μm thick) were used for the substrates of sputter deposition. The microstructures and crystal structures of the films were investigated by transmission electron microscopy (TEM) and X-ray diffraction using CuKα radiation, respectively. The effect of the sputtering conditions such as substrate temperature, partial pressure of argon gas, and the sputtering power on the structures of sputter-deposited Cu-14%Al-4%Ni films were investigated by X-ray diffraction. Results are shown and discussed. Photographs demonstrate shape memory behaviour of Cu-14%Al-4%Ni films sputter-deposited on aluminium foils from (a) liquid nitrogen temperature to (d) room temperature. (author)

  15. Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beck, Patrick R. [California Polytechnic State Univ. (CalPoly), San Luis Obispo, CA (United States)

    2010-01-07

    Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current or leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.

  16. Spatial distributions of Cu polycrystal sputtered atoms

    International Nuclear Information System (INIS)

    Abgaryan, V.K.; Semenov, A.A.; Shkarban, I.I.

    2004-01-01

    The results of the experimental determination of the Cu atoms spatial distribution, sputtered from the polycrystalline copper target, irradiated by the Xe + ions with the energy of 300 eV, are presented. The spatial distributions of the sputtered particles, calculated through the quasistable-dynamic model of the cascade modeling (CAMO) are presented also for the case of the polycrystalline copper irradiation by the Ar + and Xe + ions with the energy of 300-1000 eV [ru

  17. Sputtering of sodium on the planet Mercury

    Science.gov (United States)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  18. Proton sputtering. Final report

    International Nuclear Information System (INIS)

    Finfgeld, C.R.

    1975-01-01

    This research provides sputtering yields as a function of energy for H + and D + on several representative pure metallic elements, in the absence of surface contaminants. The experimental technique and apparatus are described. Data are given for Au, Co, Ta, W, and Mo

  19. Study of the ion sputter-machining, 1

    International Nuclear Information System (INIS)

    Miyamoto, Iwao; Taniguchi, Norio

    1979-01-01

    A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

  20. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-12-15

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  1. Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

    International Nuclear Information System (INIS)

    Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

    2016-01-01

    Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

  2. Sputtering yield calculation for binary target

    International Nuclear Information System (INIS)

    Jimenez-Rodriguez, J.J.; Rodriguez-Vidal, M.; Valles-Abarca, J.A.

    1979-01-01

    The generalization for binary targets, of the ideas proposed by Sigmund for monoatomic targets, leads to a set of coupled intergrodifferential equations for the sputtering functions. After moment decomposition, the final formulae are obtained by the standard method based on the Laplace Transform, where the inverse transform is made with the aid of asymptotic expansions in the limit of very high projectile energy as compared to the surface binding energy. The possible loss of stoichiometry for binary targets is analyzed. Comparison of computed values of sputtering yield for normal incidence, with experimental results shows good agreement. (author)

  3. Photonometers for coating and sputtering machines

    Directory of Open Access Journals (Sweden)

    Václavík J.

    2013-05-01

    Full Text Available The concept of photonometers (alternative name of optical monitor of a vacuum deposition process for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  4. Sputtering of solid nitrogen by keV helium ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Sørensen, H.

    1993-01-01

    Solid nitrogen has become a standard material among the frozen molecular gases for electronic sputtering. We have combined measurements of sputtering yields and energy spectra from nitrogen bombarded by 4-10 keV helium ions. The data show that the erosion is electronic rather than knockon...

  5. Composition changes in sputter deposition of Y-Ba-Cu-O films

    International Nuclear Information System (INIS)

    Hoshi, Y.; Naoe, M.

    1989-01-01

    The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

  6. Observation of Repetition-Rate Dependent Emission From an Un-Gated Thermionic Cathode Rf Gun

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P.; Sun, Y.; Harris, J.R.; Lewellen, J.W.

    2017-06-02

    Recent work at Fermilab in collaboration with the Advanced Photon Source and members of other national labs, designed an experiment to study the relationship between the RF repetition rate and the average current per RF pulse. While existing models anticipate a direct relationship between these two parameters we observed an inverse relationship. We believe this is a result of damage to the barium coating on the cathode surface caused by a change in back-bombardment power that is unaccounted for in the existing theories. These observations shed new light on the challenges and fundamental limitations associated with scaling an ungated thermionic cathode RF gun to high average current.

  7. Physicochemical model for reactive sputtering of hot target

    Energy Technology Data Exchange (ETDEWEB)

    Shapovalov, Viktor I., E-mail: vishapovalov@mail.ru; Karzin, Vitaliy V.; Bondarenko, Anastasia S.

    2017-02-05

    A physicochemical model for reactive magnetron sputtering of a metal target is described in this paper. The target temperature in the model is defined as a function of the ion current density. Synthesis of the coating occurs due to the surface chemical reaction. The law of mass action, the Langmuir isotherm and the Arrhenius equation for non-isothermal conditions were used for mathematical description of the reaction. The model takes into consideration thermal electron emission and evaporation of the target surface. The system of eight algebraic equations, describing the model, was solved for the tantalum target sputtered in the oxygen environment. It was established that the hysteresis effect disappears with the increase of the ion current density. - Highlights: • When model is applied for a cold target, hysteresis width is proportional to the ion current density. • Two types of processes of hot target sputtering are possible, depending on the current density: with and without the hysteresis. • Sputtering process is dominant at current densities less than 50 A/m{sup 2} and evaporation can be neglected. • For current densities over 50 A/m{sup 2} the hysteresis width reaches its maximum and the role of evaporation increases.

  8. Facing-target sputtering deposition of ZnO films with Pt ultra-thin layers for gas-phase photocatalytic application

    International Nuclear Information System (INIS)

    Zhang Zhonghai; Hossain, Md. Faruk.; Arakawa, Takuya; Takahashi, Takakazu

    2010-01-01

    In this paper, various zinc oxide (ZnO) films are deposited by a versatile and effective dc-reactive facing-target sputtering method. The ratios of Ar to O 2 in the mixture gas are varied from 8:2 to 6:4 at a fixed sputtering pressure of 1.0 Pa. X-ray diffraction, spectrophotometer and scanning electron microscope are used to study the crystal structure, optical property and surface morphology of the as-deposited films. The Pt ultra-thin layer, ∼2 nm thick, is deposited on the surface of ZnO film by dc diode sputtering with a mesh mask controlling the coated area. The photocatalytic activity of ZnO films and Pt-ZnO films is evaluated by decomposition of methanol under UV-vis light irradiation. The variation of photocatalytic activity depends on the ratios of Ar to O 2 , which is mainly attributed to the different grain size and carrier mobility. Though the pure ZnO film normally shows a low gas-phase photocatalytic activity, its activity is significantly enhanced by depositing Pt ultra-thin layer.

  9. Depth of origin of atoms sputtered from crystalline targets

    International Nuclear Information System (INIS)

    Shapiro, M.H.; Trovato, E.; Tombrello, T.A.

    2001-01-01

    Recently, V.I. Shulga and W. Eckstein (Nucl. Instr. and Meth. B 145 (1998) 492) investigated the depth of origin of atoms sputtered from random elemental targets using the Monte Carlo code TRIM.SP and the lattice code OKSANA. They found that the mean depth of origin is proportional to N -0.86 , where N is the atomic density; and that the most probable escape depth is ∼λ 0 /2, where λ 0 is the mean atomic distance. Since earlier molecular dynamics simulations with small crystalline elemental targets typically produced a most probable escape depth of zero (i.e., most sputtered atoms came from the topmost layer of the target), we have carried out new molecular dynamics simulations of sputtered atom escape depths with much larger crystalline targets. Our new results, which include the bcc targets Cs, Rb and W, as well as the fcc targets Cu and Au predict that the majority of sputtered atoms come from the first atomic layer for the bcc(1 0 0), bcc(1 1 1), fcc(1 0 0) and fcc(1 1 1) targets studied. For the high-atomic density targets Cu, Au and W, the mean depth of origin of sputtered atoms typically is less than 0.25λ 0 . For the low-atomic density targets Cs and Rb, the mean depth of origin of sputtered atoms is considerably larger, and depends strongly on the crystal orientation. We show that the discrepancy between the single-crystal and amorphous target depth of origin values can be resolved by applying a simple correction to the single-crystal results

  10. The influences of noble gas on the volt-ampere characteristics of a thermionic Cs diode

    International Nuclear Information System (INIS)

    Tschersich, K.G.

    1975-10-01

    The influence of the distance between electrodes and of the partial pressure of added xenon on the voltage drop in the electrode gap is investigated by measuring current density-voltage curves on plane parallel thermionic test diodes. With unchanged diode parameters, an addition of xenon reduces the voltage drop when the product of Cs vapour pressure and electrode gap is smaller than an optimum value of about 5 x 10 -2 cm.Torr. The xenon influences the mobility and thus the duration of the Cs ions. These procedures are explained and discussed using a relatively simple mathematical model. (GG/LH) [de

  11. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    International Nuclear Information System (INIS)

    Rodríguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martín, Francisco; Schrebler, Ricardo; Ramos-Barrado, José R.; Dalchiele, Enrique A.

    2012-01-01

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

  12. Sputtering of Ge(001): transition between dynamic scaling regimes

    DEFF Research Database (Denmark)

    Smilgies, D.-M.; Eng, P.J.; Landemark, E.

    1997-01-01

    We have studied the dynamic behavior of the Ge(001) surface during sputtering in situ and in real time using synchrotron X-ray diffraction. We find two dynamic regimes as a function of surface temperature and sputter current which are separated by a sharp transition. The boundary between these two...

  13. Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

    International Nuclear Information System (INIS)

    Han, Jeon G

    2009-01-01

    The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

  14. Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

    Science.gov (United States)

    Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

    2016-08-01

    Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. © 2015 Wiley Periodicals, Inc.

  15. Simple model of surface roughness for binary collision sputtering simulations

    Energy Technology Data Exchange (ETDEWEB)

    Lindsey, Sloan J. [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Hobler, Gerhard, E-mail: gerhard.hobler@tuwien.ac.at [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Maciążek, Dawid; Postawa, Zbigniew [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30348 Kraków (Poland)

    2017-02-15

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  16. Simple model of surface roughness for binary collision sputtering simulations

    International Nuclear Information System (INIS)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-01-01

    Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

  17. Simple model of surface roughness for binary collision sputtering simulations

    Science.gov (United States)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-02-01

    It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

  18. Time-dependent angular distribution of sputtered particles from amorphous targets

    International Nuclear Information System (INIS)

    Yamamura, Yasunori

    1990-01-01

    Using the time-evolution computer simulation code DYACAT, the time-dependent behavior of sputtering phenomena has been investigated. The DYACAT program is based on the binary collision approximation, and the cascade development in solids is followed time-evolutionally. The total sputtering yield, the angular distribution and the energy distribution of sputtered atoms are calculated as a function of time for 1 keV Ar→Cu, where the angle of incidence is the inverse surface normal. It is found that the angular distribution of the prompt collisional phase of the sputtering process shows an under-cosine and that the corresponding energy spectrum has a peak near 10 eV. The slow collisional phase of 1 keV Ar→Cu will start after 3x10 -14 s, and its angular distribution shows an over-cosine distribution. (orig.)

  19. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  20. Ion source with radiofrequency mass filter for sputtering purposes

    International Nuclear Information System (INIS)

    Sielanko, J.; Sowa, M.

    1990-01-01

    The Kaufman ion source with radiofrequency mass filter is described. The construction as well as operating characteristics of ion source are presented. The arrangement is suitable for range distribution measurements of implanted layers, where the sputtering rate has to be constant over the wide range of sputtering time. 4 figs., 17 refs. (author)

  1. Development of an inductively coupled impulse sputtering source for coating deposition

    Science.gov (United States)

    Loch, Daniel Alexander Llewellyn

    In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

  2. Silicon transport in sputter-deposited tantalum layers grown under ion bombardment

    International Nuclear Information System (INIS)

    Gallais, P.; Hantzpergue, J.J.; Remy, J.C.; Roptin, D.

    1988-01-01

    Tantalum was sputter deposited on (111) Si substrate under low-energy ion bombardment in order to study the effects of the ion energy on the silicon transport into the Ta layer. The Si substrate was heated up to 500 0 C during growth. For ion energies up to 180 eV silicon is not transported into tantalum and the growth temperature has no effect. An ion bombardment energy of 280 eV enhances the transport of silicon throughout the tantalum layer. Growth temperatures up to 300 0 C have no effect on the silicon transport which is mainly enhanced by the ion bombardment. For growth temperatures between 300 and 500 0 C, the silicon transport is also enhanced by the thermal diffusion. The experimental depth distribution of silicon is similar to the theoretical depth distribution calculated for the case of an interdiffusion. The ion-enhanced process of silicon transport is characterized by an activation energy of 0.4 eV. Silicon into the layers as-grown at 500 0 C is in both states, amorphous silicide and microcrystalline cubic silicon

  3. Angular distributions of particles sputtered from multicomponent targets with gas cluster ions

    Energy Technology Data Exchange (ETDEWEB)

    Ieshkin, A.E. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Ermakov, Yu.A., E-mail: yuriermak@yandex.ru [Skobeltsyn Nuclear Physics Research Institute, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Chernysh, V.S. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

    2015-07-01

    The experimental angular distributions of atoms sputtered from polycrystalline W, Cd and Ni based alloys with 10 keV Ar cluster ions are presented. RBS was used to analyze a material deposited on a collector. It has been found that the mechanism of sputtering, connected with elastic properties of materials, has a significant influence on the angular distributions of sputtered components. The effect of non-stoichiometric sputtering at different emission angles has been found for the alloys under cluster ion bombardment. Substantial smoothing of the surface relief was observed for all targets irradiated with cluster ions.

  4. The influence of landing points on the sputtering of mono-crystal solids due to cluster impacting

    Energy Technology Data Exchange (ETDEWEB)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi, E-mail: zsyang@ipp.ac.cn; Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn

    2017-01-15

    The mechanism of sputtering due to cluster impacting which has been widely studied is an important but unsolved problem. In present research, we discuss the effect of the landing point on the sputtering with the method of molecular dynamics. The results show that the landing points play significant roles on sputter yield when the temperature of target is low. Specific landing points can cause particular sputtering patterns which lead to different sputtering yield and moving directions of sputtered atoms. The mechanism of this phenomenon is that specific landing keeps symmetries and anisotropies of target lattice, which influence the sputtering yield.

  5. Recent advancements in sputter-type heavy negative ion sources

    International Nuclear Information System (INIS)

    Alton, G.D.

    1989-01-01

    Significant advancement have been made in sputter-type negative ion sources which utilize direct surface ionization, or a plasma to form the positive ion beam used to effect sputtering of samples containing the material of interest. Typically, such sources can be used to generate usable beam intensities of a few μA to several mA from all chemically active elements, depending on the particular source and the electron affinity of the element in question. The presentation will include an introduction to the fundamental processes underlying negative ion formation by sputtering from a low work function surface and several sources will be described which reflect the progress made in this technology. 21 refs., 9 figs., 1 tab

  6. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  7. Changes in X-ray photoelectron spectra of yttria-tetragonal zirconia polycrystal by ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Eiko; Yoshinari, Masao [Tokyo Dental College, Oral Health Science Center, Tokyo, Chiyoda-ku (Japan)

    2016-04-15

    This paper reports changes in X-ray photoelectron spectroscopy spectra of yttria-tetragonal zirconia polycrystal (Y-TZP) brought about by Ar ion sputtering. The changes in the core-level spectra of Y-TZP suggest that preferential sputtering of oxygen occurred. A new peak was observed near 0 eV binding energy accompanied with changes in the core-level spectra by the sputtering. After 18 h in a high vacuum following the sputtering, the spectra changed by the sputtering were returned to their original shapes. In contrast, the color of Y-TZP was changed from white to pale brown by X-ray irradiation and was changed from pale brown to dark gray by ion sputtering. However, when the new peak near 0 eV decreased after 18 h, no color change was observed. Therefore, it is thought that the new peak was mainly derived from electrons trapped in various kinds of oxygen vacancies created by the sputtering in other than color centers. (orig.)

  8. Carbonaceous Particles Production in a Sputtering Discharge

    International Nuclear Information System (INIS)

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-01-01

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms

  9. Enhancement of as-sputtered silver-tantalum oxide thin film coating on biomaterial stainless steel by surface thermal treatment

    Science.gov (United States)

    Alias, Rodianah; Mahmoodian, Reza; Shukor, Mohd Hamdi Abd; Yew, Been Seok; Muhamad, Martini

    2018-04-01

    Stainless steel 316L (SS316L) is extensively used as surgical/clinical tools due to its low carbon content and excellent mechanical characteristic. The fabrication of metal ceramic based on this metallic biomaterial favor its biofunctionality properties. However, instability phase of amorphous thin film lead to degradation, corrosion and oxidation. Thus, thin film coating requires elevated adhesion strength and higher surface hardness to meet clinical tools criteria. In this study, the SS316L was deposited with micron thickness of Ag-TaO thin film by using magnetron sputtering. The microstructure, elemental analysis and phase identification of Ag-TaO thin film were characterized by using FESEM, EDX and XRD, respectively; whereas the micro scratch test and micro hardness test were performed by using Micro Scratch Testing System and Vickers Micro Hardness Tester, respectively. It was found that the coating thin film's adhesion and hardness strength were improved from 672 to 2749 mN and 142 to 158 Hv respectively. It was found that the as-deposited surface were treated at 500 °C of temperatures with 2 °C/min ramping rate enhance 4.1 times of the adhesion strength value. Furthermore, FESEM characterization revealed coarsening structure of the thin film coating which can provide high durability service.

  10. Carbon Back Sputter Modeling for Hall Thruster Testing

    Science.gov (United States)

    Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John T.

    2016-01-01

    In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) program, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Centers Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 3 4 mkhour in a fully carbon-lined chamber. A more detailed numerical monte carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values, on the order of 1.5- 2 microns/khour.

  11. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  12. Change of wettability of PTFE surface by sputter etching and excimer laser. Sputter etching oyobi excimer laser ni yoru PTFE hyomen no shinsuika

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, S. (Nitto Denko Corp., Osaka (Japan)); Kubo, U. (Kinki University, Osaka (Japan))

    1994-06-20

    The wettability of PTFE (polytetrafluoroethylene) surfaces was improved by sputter etching and excimer laser irradiation. In sputter etching, the PTFE surface was treated by reactive sputter etching with H2O gas to give active groups on the surface. In laser irradiation, the surface was irradiated in pure water by high-energy KrF excimer laser. As the surface wettability was evaluated with a contact angle to water, the contact angle decreased remarkably in both treatments resulting in a good improvement effect. In sputter etching, various new chemical bonds such as F-C=O, F2C-FC-O, F2C-C-O and C-O were observed because of a decrease in F and incorporation of oxygen. Such chemical bonds could be eliminated by ultraviolet ray irradiation, and the treated surface condition approached the initial condition after irradiation of 200 hours. In laser irradiation, it was suggested that C-F bonds were broken, and OH groups were added to the surface by dissociation of H2O to H and OH. 7 refs., 8 figs., 1 tab.

  13. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    International Nuclear Information System (INIS)

    Onufriyev, Valery V.

    2001-01-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

  14. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    Science.gov (United States)

    Onufriyev, Valery. V.

    2001-02-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

  15. Sputtering of copper (110) by 3 keV argon - a computer simulation

    International Nuclear Information System (INIS)

    Weygandt, A.; King, B.V.

    1998-01-01

    The aims of this study are to investigate the angular distribution of atoms sputtered from {110} surface of a copper monocrystal due to normal incidence 3 keV Argon impact as well as to examine the change of sputtering behaviour with temperature from 0 K to 670 K. We have used the Molecular Dynamics (MD) code SPUT93 to study sputtering. In MD codes Newton's equations of motion are solved simultanously for all atoms of a crystal. The forces acting on a particle are found from derivatives of a model potential function. For the present study an embedded atom method (EAM) potential was used. It was found that the total sputter yield for the warm crystal (670K) of 3.13 ± 0.03 is in agreement with experimental results and indicate that the temperature of the target has generally no direct influence on the sputtering yield. It was estimated that heating the crystal only causes more uniform emission. It was also found that ejection due to the collisions between atoms in the top layers along closed-packed directions become important. The mechanisms which determine the angular distributions of atoms sputtered from a copper crystal were identified

  16. Effect of argon ion sputtering of surface on hydrogen permeation through vanadium

    International Nuclear Information System (INIS)

    Yamawaki, Michio; Namba, Takashi; Yoneoka, Toshiaki; Kanno, Masayoshi; Shida, Koji.

    1983-01-01

    In order to measure the hydrogen permeation rate through V with atomically cleaned surface, an Ar ion sputtering apparatus has been installed in the hydrogen permeability measuring system. The permeation rate of the initial specimen was found to be increased by about one order of magnitude after Ar ion sputtering of its upstream side surface. Repeating of such a sputter-cleaning was not so much effective in increasing the steady state permeation rate as the initial sputtering was, but it accelerated the transient response rate by a factor of 2 or 3. The transient response rate was also accelerated by the increase of hydrogen pressure, but this effect tended to be diminished by the sputter-cleaning of specimen surface. The surface impurity layer on the downstream side of specimen was also inferred to act as a diffusion barrier affecting the steady state permeation rate. The present value of activation energy for hydrogen permeation through V at temperatures below 873K was the smallest one ever obtained, showing that the surface effect was minimized in the present study on account of the surface sputter-cleaning in addition to the ultra high vacuum system. (author)

  17. Visible light active Au:TiO2 nanocomposite photoanodes for water splitting: Sol-gel vs. sputtering

    International Nuclear Information System (INIS)

    Naseri, N.; Sangpour, P.; Moshfegh, A.Z.

    2011-01-01

    In this study, pure TiO 2 and Au:TiO 2 nanocomposite thin films are both synthesized using sol-gel and RF reactive co-sputtering methods. Physical and photoelectrochemical properties of the thin films deposited by each method are compared. The optical density spectra and scanning electron microscopy images of the Au:TiO 2 films reveal formation of gold nanoparticles in the all nanocomposite films synthesized by two methods. Moreover, the optical bandgap energy of the thin films decreases with addition of Au nanoparticles. X-ray photoelectron spectroscopy indicates that the presence of gold in metallic state and the formation of TiO 2 is stoichiometric. The photoelectrochemical properties of the TiO 2 and Au:TiO 2 thin films are characterized by using a compartment cell containing KOH solution as electrolyte. It is found that in the pure systems, TiO 2 sputtered films shows a higher photocurrent under visible light illumination while a reverse result is obtained for the Au:TiO 2 systems. In addition, photoirradiation on electrode/electrolyte (EE) and substrate/electrode (SE) interfaces for the sputtered samples reveals the EE illumination enhances the photoresponse of the layers as compared to SE case.

  18. Sputtering in a glow discharge ion source - pressure dependence: theory and experiment

    International Nuclear Information System (INIS)

    Mason, R.S.; Pichilingi, Melanie

    1994-01-01

    A simplified theoretical expression has been developed for a glow discharge to show how the average cathode erosion rate (expressed as the number of atoms per ion of the total bombarding flux) varies with primary sputter yield, pressure, 'diffusion length' and sputtered atom 'stopping' cross section. An inverse pressure dependence is predicted which correlates well with experiment in the 2 and He, tend to converge. It is suggested that this could be due to a change in the mechanism to self-sputtering. Under constant conditions, the erosion rates of different cathode materials still correlate quite well with the differences in their primary sputter yields. (author)

  19. Measuring current emission and work functions of large thermionic cathodes

    International Nuclear Information System (INIS)

    Fortgang, C.M.

    2001-01-01

    As one component of the nations Stockpile Stewardship program, Los Alamos National Laboratory is constructing a 20 MeV, 2 kA (with a 4 kA upgrade capability), 3ps induction linac for doing x-ray radiography of explosive devices. The linac is one leg of a facility called the Dual-Axis Radiography Hydrodynamic Test Facility (DARHT). The electron gun is designed to operate at 3.2 MV. The gun is a Pierce type design and uses a 6.5' cathode for 2 kA operation and an 8' cathode for 4 kA operation. We have constructed a small facility called the Cathode Test Stand (CTS) to investigate engineering and physics issues regarding large thermionic dispenser-cathodes. In particular, we have looked at the issues of temperature uniformity on the cathode surface and cathode quality as measured by its work function. We have done thermal imaging of both 8' and 6.5' cathodes. Here we report on measurements of the cathode work function, both the average value and how it vanes across the face of the cathode.

  20. The outlook for application of powerful nuclear thermionic reactor -powered space electric jet propulsion engines

    International Nuclear Information System (INIS)

    Semyonov, Y.P.; Bakanov, Y.A.; Synyavsky, V.V.; Yuditsky, V.D.

    1997-01-01

    This paper summarizes main study results for application of powerful space electric jet propulsion unit (EJPUs) which is powered by Nuclear Thermionic Power Unit (NTPU). They are combined in Nuclear Power/Propulsion Unit (NPPU) which serves as means of spacecraft equipment power supply and spacecraft movement. Problems the paper deals with are the following: information satellites delivery and their on-orbit power supply during 10-15 years, removal of especially hazardous nuclear wastes, mining of asteroid resources and others. Evaluations on power/time/mass relationship for this type of mission are given. EJPU parameters are compatible with Russian existent or being under development launch vehicle. (author)

  1. Intrinsic Photocatalytic Assessment of Reactively Sputtered TiO2 Films

    NARCIS (Netherlands)

    Rafieian Boroujeni, Damon; Driessen, Rick Theodorus; Driessen, Rick T.; Ogieglo, Wojciech; Lammertink, Rob G.H.

    2015-01-01

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during

  2. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  3. Development of ion beam sputtering techniques for actinide target preparation

    Science.gov (United States)

    Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

    1985-06-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

  4. Electronic sputtering of biomolecules and its application in mass spectrometry

    International Nuclear Information System (INIS)

    Haakansson, P.; Sundqvist, B.U.R.

    1989-01-01

    In 1974 Macfarlane discovered that fast heavy ions from a 252-Cf source can desorb and ionize molecules from a solid surface. The mass of the molecules was determined by time-of-flight technique. It has been shown that the desorption mechanism is associated with the electron part of the stopping power of the primary ion and the name 'electron sputtering' has been adopted for the phenomenon to distinguish it from the well-known sputtering process with ions of KeV energy. A review of electronic sputtering of biomolecules will be given as well as recent measurements on Langmuir-Blodgett films. One important application of electronic sputtering is in the field of mass spectrometry. With this technique large and nonvolatile molecules can be studied. Particularly adsorption of biomolecules to a nitrocellulose backing has proven to be very useful. Examples will be given of mass spectra from peptides with a molecular weight above 20,000 u. (author)

  5. Angular distributions of sputtered particles from NiTi alloy

    International Nuclear Information System (INIS)

    Neshev, I.; Hamishkeev, V.; Chernysh, V.S.; Postnikov, S.; Mamaev, B.

    1993-01-01

    The angular distributions of sputtered Ni and Ti from a polycrystalline NiTi (50-50%) alloy are investigated by Auger electron spectroscopy and Rutherford backscattering spectroscopy. A difference in the angular distributions is observed with Ni being sputtered preferentially near the surface normal. A computer program for the calculation of the angular distributions of constituents sputtered from binary targets is created and used. The mechanisms responsible for the observed differences in the angular distributions are discussed. It is found that the collisional cascade theory is not directly applicable to the results of the constituents' angular distributions obtained in the presence of oxygen. The fitted coefficients of bombardment-induced segregation are found to be greater than the experimentally obtained ones. (author)

  6. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  7. ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

    2016-09-28

    In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

  8. Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

    KAUST Repository

    Wei, Binbin

    2018-04-09

    Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

  9. Magnetron sputtered TiN thin films toward enhanced performance supercapacitor electrodes

    KAUST Repository

    Wei, Binbin; Liang, Hanfeng; Zhang, Dongfang; Qi, Zhengbing; Shen, Hao; Wang, Zhoucheng

    2018-01-01

    Supercapacitors as a new type of energy storage devices bridging the gap between conventional capacitors and batteries have aroused widespread concern. Herein, binder-free titanium nitride (TiN) thin film electrodes for supercapacitors prepared by reactive magnetron sputtering technology are reported. The effect of N2 content on the supercapacitor performance is evaluated. A highest specific capacitance of 27.3 mF cm−2 at a current density of 1.0 mA cm−2, together with excellent cycling performance (98.2% capacitance retention after 20,000 cycles at 2.0 mA cm−2) is achieved in a 0.5 M H2SO4 aqueous electrolyte. More importantly, a symmetric supercapacitor device assembled on the basis of TiN thin films can deliver a maximum energy density of 17.6 mWh cm−3 at a current density of 0.2 mA cm−2 and a maximum power density of 10.8 W cm−3 at a current density of 2 mA cm−2 with remarkable cycling stability. As a consequence, TiN thin films demonstrate great potential as promising supercapacitor electrode materials.

  10. Effect of Oblique-Angle Sputtered ITO Electrode in MAPbI3 Perovskite Solar Cell Structures.

    Science.gov (United States)

    Lee, Kun-Yi; Chen, Lung-Chien; Wu, Yu-June

    2017-10-03

    This investigation reports on the characteristics of MAPbI 3 perovskite films on obliquely sputtered ITO/glass substrates that are fabricated with various sputtering times and sputtering angles. The grain size of a MAPbI 3 perovskite film increases with the oblique sputtering angle of ITO thin films from 0° to 80°, indicating that the surface properties of the ITO affect the wettability of the PEDOT:PSS thin film and thereby dominates the number of perovskite nucleation sites. The optimal power conversion efficiency (Eff) is achieved 11.3% in a cell with an oblique ITO layer that was prepared using a sputtering angle of 30° for a sputtering time of 15 min.

  11. Theory of thermal sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1977-01-01

    An energetic ion which is incident on a solid target causes a momentary temperature increase in the impact region, i.e., a so-called thermal spike occurs. Such spikes are capable of causing (or supplementing) disordering, precipitation, crystallization, electronic excitation, stoichiometry change, desorption, and sputtering, it being the contribution to sputtering that is considered here. The approach used is compatible with modern damage-distribution theory. Thus the temperature profile left by the incident ion is taken as a three-dimensional Gaussian with parameters appropriate to power-law scattering, and is used as the initial condition for solving the heat-conduction equation. Let us write this solution as T = T(t, y), where t is time and y is a dimension parallel to the target surface. The vaporization flux from a solid surface is taken as pnsup(1/2)(2π 2 >kT)sup(-1/2), where p, the equilibrium pressure of a vapor species containing n atoms, can be written as p 0 exp(-L/T), p 0 and L are constants largely independent of temperature, and 2 > is the mean mass per atom of target. An equation for the thermal sputtering coefficient is given: after integration the final result takes the form: Ssub(thermal)=pnsup(1/2)[2π 2 >k(Tsub(infinity)+cΔT 0 )]sup(-1/2)πlambda 2 tsub(eff.)atoms/ion, where Tsub(infinity) is the macroscopic target temperature, cΔT 0 is the maximum temperature increase at x = y = 0, p is to be evaluated at T = Tsub(infinity) + cΔT 0 , lambda is the mean atomic spacing of the target, and tsub(eff.) is a quantity with units of time. (author)

  12. Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ru Lili; Huang Jianjun; Gao Liang; Qi Bing

    2010-01-01

    Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp 3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1 x 10 9 Ω · cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas.

  13. Non-imaging ray-tracing for sputtering simulation with apodization

    Science.gov (United States)

    Ou, Chung-Jen

    2018-04-01

    Although apodization patterns have been adopted for the analysis of sputtering sources, the analytical solutions for the film thickness equations are yet limited to only simple conditions. Empirical formulations for thin film sputtering lacking the flexibility in dealing with multi-substrate conditions, a suitable cost-effective procedure is required to estimate the film thickness distribution. This study reports a cross-discipline simulation program, which is based on discrete particle Monte-Carlo methods and has been successfully applied to a non-imaging design to solve problems associated with sputtering uniformity. Robustness of the present method is first proved by comparing it with a typical analytical solution. Further, this report also investigates the overall all effects cause by the sizes of the deposited substrate, such that the determination of the distance between the target surface and the apodization index can be complete. This verifies the capability of the proposed method for solving the sputtering film thickness problems. The benefit is that an optical thin film engineer can, using the same optical software, design a specific optical component and consider the possible coating qualities with thickness tolerance, during the design stage.

  14. RF Magnetron Sputtering Coating Of Hydroxyapatite On Alkali Solution Treated Titanate Nanorods

    Directory of Open Access Journals (Sweden)

    Lee K.

    2015-06-01

    Full Text Available Hydroxyapatite (HA is a material with outstanding biocompatibility. It is chemically similar to natural bone tissue, and has therefore been favored for use as a coating material for dental and orthopedic implants. In this study, RF magnetron sputtering was applied for HA coating. And Alkali treatment was performed in a 5 M NaOH solution at 60°C. The coated HA thin film was heat-treated at a range of temperatures from 300 to 600°C. The morphological characterization and crystal structures of the coated specimens were then obtained via FE-SEM, XRD, and FT-IR. The amorphous thin film obtained on hydrothermally treated nanorods transformed into a crystalline thin film after the heat treatment. The change in the phase transformation, with an enhanced crystallinity, showed a reduced wettability. The hydrothermally treated nanorods with an amorphous thin film, on the other hand, showed an outstanding wettability. The HA thin film perpendicularly coated the nanorods in the upper and inner parts via RF magnetron sputtering, and the FT-IR results confirmed that the molecular bonding of the coated film had an HA structure.

  15. The effect of the molecular mass on the sputtering by electrosprayed nanodroplets

    Energy Technology Data Exchange (ETDEWEB)

    Borrajo-Pelaez, Rafael; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu

    2015-07-30

    Highlights: • We study the effect of the molecular mass on nanodroplet sputtering of silicon. • The impact phenomenology is a strong function of the projectile’s molecular mass. • Nanodroplet sputtering intrinsically is a molecular scale phenomenon. - Abstract: Energetic bombardment of covalently bonded materials by electrosprayed nanodroplets causes sputtering and topographic changes on the surface of the target. This work investigates the influence of the projectile's molecular mass on these phenomena by sputtering single-crystal silicon wafers with a variety of liquids (molecular masses between 45.0 and 773.3 amu), and acceleration voltages. The electrosprays are characterized via time of flight to determine the charge to mass ratio of the nanodroplets which, together with the acceleration voltage, yield the impact velocity, the stagnation pressure, and the molecular kinetic energy of the projectile. The estimated range of droplet diameters is 20–79 nm, while the impact velocity, the stagnation pressure and the molecular kinetic energy range between 2.9–10 km/s, 4.7–63 GPa, and 2.1–98 eV. We find that the damage on the surface of the targets strongly depends on the molecular mass of the projectile: liquids with low molecular mass sputter significantly less and produce nanometric indentations and low surface roughness, the latter increasing moderately with stagnation pressure; in contrast, the roughness and sputtering caused by the impacts of droplets with larger molecular mass reach significantly higher values, and exhibit non-monotonic behaviors. The maximum sputtering yields for formamide, EAN, EMI-BF{sub 4}, EMI-Im, TES, and TPP are 0.20, 0.75, 1.20, 2.80, 4.00 and 2.90 silicon atoms per molecule in the projectile. These trends indicate that despite their rather large diameters, the sputtering by electrosprayed nanodroplets is intrinsically a molecular scale phenomenon.

  16. Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

    Science.gov (United States)

    Tak, Young Jun; Ahn, Byung Du; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-02-23

    Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively.

  17. Dependence of sputtering coefficient on ion dose

    International Nuclear Information System (INIS)

    Colligon, J.S.; Patel, M.H.

    1977-01-01

    The sputtering coefficient of polycrystalline gold bombarded by 10-40 keV Ar + ions had been measured as a function of total ion dose and shown to exhibit oscillations in magnitude between 30 and 100%. Possible experimental errors which would give rise to such an oscillation have been considered, but it is apparent that these factors are unable to explain the measurements. It is proposed that a change in the Sublimation Energy associated with either bulk damage or formation of surface topographical features arising during ion bombardment may be responsible for the observed variations in sputtering coefficient. (author)

  18. Basic electrochemical properties of sputtered gold film electrodes

    International Nuclear Information System (INIS)

    Libansky, Milan; Zima, Jiri; Barek, Jiri; Reznickova, Alena; Svorcik, Vaclav; Dejmkova, Hana

    2017-01-01

    Gold nanolayers made by sputtering of pure gold (physical vapour deposition) are commonly used for many biophysical and material applications. However, the use of sputtering method for fabrication of working electrodes for electroanalytical purposes is less common. This paper focuses on the testing and characterization of sputtered working roughened gold nanostructured film electrodes, which fall into category of upcoming desirable new generation of nanostructured gold working electrodes. Gold nanostructured films (80 nm thin) were sputtered onto 50 μm thin PTFE substrates with three different types of treatment: pristine, plasma treated, and plasma treated and subsequently spontaneously grafted with biphenyl-4,4′-dithiol. The characterization of gold nanostructured film electrodes was carried out by examination of the electrode reaction of standard redox probes (ferrocyanide/ferricyanide, hydroquinone/benzoquinone) in different types of supporting electrolytes (BR buffers of various pH, KCl, KNO 3 , H 2 SO 4 ), by exploration of the electrode surface by scanning electron microscopy, by atomic force microscopy accompanied by elementary analysis and contact angle measurements. The testing of electrodes was complemented by an attempt to calculate their real surface areas from Randles-Sevcik equation. All results were compared to conventional bulk gold electrode. The practical applicability of the nanostructured gold electrodes as sensors for the determination of environmental pollutants was verified by voltammetric determination of hydroquinone as a model electrochemically oxidisable organic environmental pollutant.

  19. Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

    International Nuclear Information System (INIS)

    Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

    1980-01-01

    The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

  20. Co-deposition of silver nanoclusters and sputtered alumina for sensor devices

    International Nuclear Information System (INIS)

    Schultes, Guenter; Schmidt, Michael; Truar, Marcel; Goettel, Dirk; Freitag-Weber, Olivia; Werner, Ulf

    2007-01-01

    Heterogeneous thin films may be beneficial for sensoring devices. The electrical conductivity of nanoscale metallic particles being embedded in a matrix of non conducting material should exhibit higher sensitivity to mechanical stress and strain compared to homogeneous films. The production of heterogeneous films may follow different routes. This paper describes the attempt to embed Ag nanoclusters emitted from a gas aggregation cluster source into a growing matrix of alumina originating from sputter sources. The characteristics of the cluster source are first resumed, with their mean masses ranging from approx. 1000 to 100,000 atoms per cluster. The expelled and soft landed clusters are extensively examined by transmission electron microscopy verifying their crystalline form. Yet the use of a radio frequency driven sputter source for the embed material destroys and annihilates the Ag clusters even at very low sputter power. If a reactive direct current sputter process is performed within an oxidising sputter gas instead, the Ag clusters are oxidised to different oxides, but they survive as crystalline entities as verified by X-ray diffraction investigations. A simple subsequent heat treatment reduces the Ag oxides to metallic Ag clusters

  1. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    International Nuclear Information System (INIS)

    Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

    2016-01-01

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  2. Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

    2016-11-15

    Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

  3. Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

    International Nuclear Information System (INIS)

    Kree, R.; Yasseri, T.; Hartmann, A.K.

    2009-01-01

    We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

  4. Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

    International Nuclear Information System (INIS)

    Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

    1994-01-01

    Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

  5. C60 ion sputtering of layered organic materials

    International Nuclear Information System (INIS)

    Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

    2008-01-01

    Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

  6. Preparation and characterization of thick metastable sputter deposits

    International Nuclear Information System (INIS)

    Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

    1975-01-01

    High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

  7. Arc generation from sputtering plasma-dielectric inclusion interactions

    CERN Document Server

    Wickersham, C E J; Fan, J S

    2002-01-01

    Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al sub 2 O sub 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect...

  8. Transmission sputtering of gold thin-films by low-energy (< 1 keV) xenon ions: I. The system and the measurement

    International Nuclear Information System (INIS)

    Ayrault, G.; Seidman, D.N.

    1978-01-01

    A novel system for direct measurement of the transmission sputtering yields of ion-irradiated thin films is described. The system was specifically designed for the study of the transmission sputtering caused by low energy ( 0 A thick) which was mounted in a JEM 200 transmission electron-microscope holder. The temperature of the specimen could be varied between approx. 25 and 300 K employing a continuous-transfer liquid-helium cryostat. The particles (atoms or ions) ejected from the unirradiated surface of the gold thin-film were detected by two channetron electron-multiplier arrays in the Chevron configuration; the Chevron detector was able to detect individual transmission sputtered particles when operated in the saturated mode. To further enhance resolution the electron cascades, produced by the CEMA, were amplified and shaped electronically into uniform square pulses. The shaped signals were detected with an Ithaco 391A lock-in amplifier (LIA). With the aid of a ratiometer feature in the LIA we were able to measure directly the ratio of the transmission sputtered-current (I/sub t/) to the incident ion-current (I/sub b/); for I/sub b/ = μA cm -2 a ratio of I/sub t//I/sub b/ as small as 1 x 10 -9 was measured. A detailed discussion of the calibration procedure and the experimental errors, involved in this technique, are also presented. 45 references

  9. Study of the chemical sputtering in Tore-Supra; Etude de l'erosion chimique dans le tokamak Tore-Supra

    Energy Technology Data Exchange (ETDEWEB)

    Cambe, A

    2002-06-28

    The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C{sub 2}D{sub x} and C{sub 3}D{sub y}) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD{sub 4} (Y{sub CD4}) is highly flux ({phi}) dependent, showing a variation of the form: Y{sub CD4} {proportional_to} {phi}{sup -0.23}. The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y{sub CD4}. The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, {mu}m wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 {mu}m of tungsten. (author)

  10. Life Testing and Diagnostics of a Planar Out-of-Core Thermionic Converter

    Science.gov (United States)

    Thayer, Kevin L.; Ramalingam, Mysore L.; Young, Timothy J.; Lamp, Thomas R.

    1994-07-01

    This paper details the design and performance of an automated computer data acquisition system for a planar, out-of-core thermionic converter with CVD rhenium electrodes. The output characteristics of this converter have been mapped for emitter temperatures ranging from approximately 1700K to 2000K, and life testing of the converter is presently being performed at the design point of operation. An automated data acquisition system has been constructed to facilitate the collection of current density versus output voltage (J-V) and temperature data from the converter throughout the life test. This system minimizes the amount of human interaction necessary during the lifetest to measure and archive the data and present it in a usable form. The task was accomplished using a Macintosh Ilcx computer, two multiple-purpose interface boards, a digital oscilloscope, a sweep generator, and National Instrument's LabVIEW application software package.

  11. Electric strength of metal-ceramic brazed units of thermionic energy converters in cesium vapours

    International Nuclear Information System (INIS)

    Belousenko, A.P.; Vasilchenko, A.V.; Nikolaev, Y.V.

    1989-01-01

    The investigation of electric strength characteristics of the hollow metal-ceramic brazed units of thermionic energy converters with the insulator 1 = 10-50 mm from polycrystal aluminum oxide at the temperature T = 450-750 degrees and the cesium vapour pressure P Cs = 10 - 1 -10 3 Pa has been carried out. The experimental dependencies of the break-down voltage of the brazed units on the temperature, parameter P Cs · 1 and the value of surface electric resistance of the insulators are given as well as the empiric equations obtained with the help of experimental data for calculating the break-down voltage. A mechanism of ceramic insulator influence on electric strength characteristics of the cesium gap is investigated. A breakdown model explaining this influence is proposed

  12. Influence of R.F. sputter parameters on the magnetic orientation of Co-Cr layers

    NARCIS (Netherlands)

    Lodder, J.C.; Wielinga, T.

    1984-01-01

    Co-Cr layers for the perpendicular recording mode were deposited by means of RF-sputtering. The most important sputter parameters, i.e. the RF sputter high voltage VRF, the argon pressure Par and the substrate holder temperature Tsh, gave an optimum value for perpendicular orientation of the

  13. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    Andersson, Joakim; Ni, Pavel; Anders, André

    2013-01-01

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

  14. Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

    International Nuclear Information System (INIS)

    Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

    2009-01-01

    We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

  15. Observing Planets and Small Bodies in Sputtered High Energy Atom (SHEA) Fluxes

    Science.gov (United States)

    Milillo, A.; Orsini, S.; Hsieh, K. C.; Baragiola, R.; Fama, M.; Johnson, R.; Mura, A.; Plainaki, Ch.; Sarantos, M.; Cassidy, T. A.; hide

    2012-01-01

    The evolution of the surfaces of bodies unprotected by either strong magnetic fields or thick atmospheres in the Solar System is caused by various processes, induced by photons, energetic ions and micrometeoroids. Among these processes, the continuous bombardment of the solar wind or energetic magnetospheric ions onto the bodies may significantly affect their surfaces, with implications for their evolution. Ion precipitation produces neutral atom releases into the exosphere through ion sputtering, with velocity distribution extending well above the particle escape limits. We refer to this component of the surface ejecta as sputtered high-energy atoms (SHEA). The use of ion sputtering emission for studying the interaction of exposed bodies (EB) with ion environments is described here. Remote sensing in SHEA in the vicinity of EB can provide mapping of the bodies exposed to ion sputtering action with temporal and mass resolution. This paper speculates on the possibility of performing remote sensing of exposed bodies using SHEA The evolution of the surfaces of bodies unprotected by either strong magnetic fields or thick atmospheres in the Solar System is caused by various processes, induced by photons, energetic ions and micrometeoroids. Among these processes, the continuous bombardment of the solar wind or energetic magnetospheric ions onto the bodies may significantly affect their surfaces, with implications for their evolution. Ion precipitation produces neutral atom releases into the exosphere through ion sputtering, with velocity distribution extending well above the particle escape limits. We refer to this component of the surface ejecta as sputtered high-energy atoms (SHEA). The use of ion sputtering emission for studying the interaction of exposed bodies (EB) with ion environments is described here. Remote sensing in SHEA in the vicinity of EB can provide mapping of the bodies exposed to ion sputtering action with temporal and mass resolution. This paper

  16. Nanoporous zinc oxide films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

    2011-01-01

    In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

  17. Coating multilayer material with improved tribological properties obtained by magnetron sputtering

    Science.gov (United States)

    Mateescu, A. O.; Mateescu, G.; Balasoiu, M.; Pompilian, G. O.; Lungu, M.

    2017-02-01

    This work is based on the Patent no. RO 128094 B1, granted by the Romanian State Office for Inventions and Trademarks. The goal of the work is to obtain for investigations tribological coatings with multilayer structure with improved tribological properties, deposited by magnetron sputtering process from three materials (sputtering targets). Starting from compound chemical materials (TiC, TiB2 and WC), as sputtering targets, by deposition in argon atmosphere on polished stainless steel, we have obtained, based on the claims of the above patent, thin films of multilayer design with promising results regarding their hardness, elastic modulus, adherence, coefficient of friction and wear resistance. The sputtering process took place in a special sequence in order to ensure better tribological properties to the coating, comparing to those of the individual component materials. The tribological properties, such as the coefficient of friction, are evaluated using the tribometer test.

  18. Observation of self-sputtering in energetic condensation of metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2004-01-01

    The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-state-averaged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased substrates exposed to streaming Zr and Au vacuum arc plasma. The self-sputtering yields for both metals were estimated to be about 0.05 in the absence of bias, and exceeding 0.5 when bias reached-50 V. These surprisingly high values can be reconciled with binary collision theory and molecular dynamics calculations taking high the kinetic and potential energy of vacuum arc ions into account

  19. Sputtering of amorphous carbon layers studied by laser induced fluorescence

    International Nuclear Information System (INIS)

    Pasch, E.

    1992-07-01

    In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

  20. The disclosed transformation of pre-sputtered Ti films into nanoparticles via controlled thermal oxidation

    Science.gov (United States)

    Awad, M. A.; Raaif, M.

    2018-05-01

    Nanoparticles of TiO2 were successfully prepared from pre-sputtered Ti films using the controlled thermal oxidation. The effect of oxidation temperature on structural, morphological and optical properties in addition to photocatalysis activity of the sputtered films was tested and explained. Analysis of XRD and EDAX elucidated the enhancement in crystallization and oxygen content with the increase of oxidation temperature. SEM depicted the formation of very fine nanoparticles with no specific border on the films oxidized at 550 and 600 °C, whilst crystallites with larger size of approximately from 16 to 23 nm have been observed for the film oxidized at 650 °C. Both optical transmission and refractive index were increased with increasing the oxidation temperature. A red shift in the absorption edge was obtained for the films oxidized at 650 °C compared to that oxidized at 600 °C. The photocatalysis tests demonstrated the priority of 600 °C nanoparticle films to decompose methyl orange (MO) more than 650 °C treated film.

  1. Study on the electrical properties of ITO films deposited by facing target sputter deposition

    International Nuclear Information System (INIS)

    Kim, Youn J; Jin, Su B; Kim, Sung I; Choi, Yoon S; Choi, In S; Han, Jeon G

    2009-01-01

    This study examined the mechanism for the change in the electrical properties (carrier concentration (n) and mobility (μ)) of tin-doped indium oxide (ITO) films deposited by magnetron sputtering in a confined facing magnetic field. The relationship between the carrier concentration and the mobility was significantly different from the results reported for ITO films deposited by other magnetron sputtering processes. The lowest resistivity obtained for ITO films deposited in a confined facing magnetic field at low substrate temperatures (approximately 120 0 C) was 4.26 x 10 -4 Ω cm at a power density of 3 W cm -2 . Crystalline ITO films were obtained at a low power density range from 3 to 5 W cm -2 due to the increase in the substrate temperature from 120 to 162 0 C. This contributed to the increased carrier concentration and decreased electrical resistivity. X-ray photoelectron spectroscopy revealed an increase in the concentration of the Sn 4+ states. This was attributed to the formation of a crystalline ITO film, which effectively enhanced the carrier concentration and reduced the carrier mobility.

  2. Using elastic peak electron spectroscopy for enhanced depth resolution in sputter profiling

    International Nuclear Information System (INIS)

    Hofmann, S.; Kesler, V.

    2002-01-01

    Elastic peak electron spectroscopy (EPES) is an alternative to AES in sputter depth profiling of thin film structures. In contrast to AES, EPES depth profiling is not influenced by chemical effects. The high count rate ensures a good signal to noise ratio, that is lower measurement times and/or higher precision. In addition, because of the elastically scattered electrons travel twice through the sample, the effective escape depth is reduced, an important factor for the depth resolution function. Thus, the depth resolution is increased. EPES depth profiling was successfully applied to a Ge/Si multilayer structure. For an elastic peak energy of 1.0 keV the information depth is considerably lower (0.8 nm) as compared to the Ge (LMM, 1147 eV) peak (1.6 nm) used in AES depth profiling, resulting in a respectively improved depth resolution for EPES profiling under otherwise similar profiling conditions. EPES depth profiling is successfully applied to measure small diffusion lengths at Ge/Si interfaces of the order of 1 nm. (Authors)

  3. Preparation and characterization of photocatalytic performance of hierarchical heterogeneous nanostructured ZnO/TiO2 films made by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Le Phuc Quy; Vu Thi Hanh Thu

    2013-01-01

    With the aim to enhance photocatalytic properties and anti-Ecoli bacteria abilities of TiO 2 thin films; hierarchical heterogeneous nanostructured ZnO/TiO 2 (HN s ) films were deposited by DC magnetron sputtering. The obtained results showed that both the photocatalytic performance and anti-Ecoli bacteria ability of HN s films exhibited enhancement in comparison with standard TiO 2 films. This enhancement was explained due to the reduction of the electron - hole recombination and the red shift of absorption edge of the HNs films. (author)

  4. Angular distribution of sputtered atoms from Al-Sn alloy and surface topography

    International Nuclear Information System (INIS)

    Wang Zhenxia; Pan Jisheng; Zhang Jiping; Tao Zhenlan

    1992-01-01

    If an alloy is sputtered the angular distribution of the sputtered atoms can be different for each component. At high ion energies in the range of linear cascade theory, different energy distributions for components of different mass in the solid are predicted. Upon leaving the surface, i.e. overcoming the surface binding energy, these differences should show up in different angular distributions. Differences in the angular distribution are of much practical interest, for example, in thin-film deposition by sputtering and surface analysis by secondary-ion mass spectroscopy and Auger electron spectroscopy. Recently our experimental work has shown that for Fe-W alloy the surface microtopography becomes dominant and determines the shape of the angular distribution of the component. However, with the few experimental results available so far it is too early to draw any general conclusions for the angular distribution of the sputtered constituents. Thus, the aim of this work was to study further the influence of the surface topography on the shape of the angular distribution of sputtered atoms from an Al-Sn alloy. (Author)

  5. Simultaneous study of sputtering and secondary ion emission of binary Fe-based alloys

    International Nuclear Information System (INIS)

    Riadel, M.M.; Nenadovic, T.; Perovic, B.

    1976-01-01

    The sputtering and secondary ion emission of binary Fe-based alloys of simple phase diagrams have been studied simultaneously. A series FeNi and FeCr alloys in the concentration range of 0-100% have been bombarded by 4 keV Kr + ions in a secondary ion mass spectrometer. The composition of the secondary ions has been analysed and also a fraction of the sputtered material has been collected and analysed by electron microprobe. The surface topography of the etched samples has been studied by scanning electron microscope. The relative sputtering coefficients of the metals have been determined, and the preferential sputtering of the alloying component of lower S have been proved. The etching pictures of samples are in correlation with the sputtering rates. Also the degree of secondary ionization has been calculated from the simultaneously measured ion emission and sputtering data. α + shows the change in the concentration range of the melting point minimum. This fact emphasizes the connection between the physico-chemical properties of alloys and their secondary emission process. From the dependence of the emitted homo- and hetero-cluster ions, conclusions could be shown concerning the production mechanism of small metallic aggregates

  6. Sputtering yields of carbon based materials under high particle flux with low energy

    Science.gov (United States)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-04-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

  7. Sputtering yields of carbon based materials under high particle flux with low energy

    International Nuclear Information System (INIS)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-01-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

  8. Non-stoichiometry of MoS2 phase prepared by sputtering

    International Nuclear Information System (INIS)

    Ito, T.; Nakajima, K.

    1978-01-01

    The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

  9. Measurements of sputtering yields for low-energy plasma ions

    International Nuclear Information System (INIS)

    Nishi, M.; Yamada, M.; Suckewer, S.; Rosengaus, E.

    1979-04-01

    Sputtering yields of various wall/limiter materials of fusion devices have been extensively measured in the relevant plasma environment for low-energy light ions (E 14 cm -3 and electron temperature up to 10eV. Target materials used were C (graphite), Ti, Mo, Ta, W, and Fe (stainless steel). In order to study the dependence of the sputtering yields on the incident energy of ions, the target samples were held at negative bias voltage up to 300V. The sputtering yields were determined by a weight-loss method and by spectral line intensity measurements. The data obtained in the present experiment agree well with those previously obtained at the higher energies (E greater than or equal to 200eV) by other authors using different schemes; the present data also extend to substantially lower energies (E approx. > 30eV) than hitherto

  10. A theoretical approach to sputtering due to molecular ion bombardment, 1

    International Nuclear Information System (INIS)

    Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

    1981-01-01

    A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

  11. Room temperature growth of nanocrystalline anatase TiO2 thin films by dc magnetron sputtering

    International Nuclear Information System (INIS)

    Singh, Preetam; Kaur, Davinder

    2010-01-01

    We report, the structural and optical properties of nanocrystalline anatase TiO 2 thin films grown on glass substrate by dc magnetron sputtering at room temperature. The influence of sputtering power and pressure over crystallinity and surface morphology of the films were investigated. It was observed that increase in sputtering power activates the TiO 2 film growth from relative lower surface free energy to higher surface free energy. XRD pattern revealed the change in preferred orientation from (1 0 1) to (0 0 4) with increase in sputtering power, which is accounted for different surface energy associated with different planes. Microstructure of the films also changes from cauliflower type to columnar type structures with increase in sputtering power. FESEM images of films grown at low pressure and low sputtering power showed typical cauliflower like structure. The optical measurement revealed the systematic variation of the optical constants with deposition parameters. The films are highly transparent with transmission higher than 90% with sharp ultraviolet cut off. The transmittance of these films was found to be influenced by the surface roughness and film thickness. The optical band gap was found to decrease with increase in the sputtering power and pressure. The refractive index of the films was found to vary in the range of 2.50-2.24 with increase in sputtering pressure or sputtering power, resulting in the possibility of producing TiO 2 films for device applications with different refractive index, by changing the deposition parameters.

  12. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  13. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Science.gov (United States)

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H.

    2012-03-01

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB6), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB6 layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB6 are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB6/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB6) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 1018 cm-3) free carrier density in the sputtered polycrystalline LaB6.

  14. High power densities from high-temperature material interactions. [in thermionic energy conversion and metallic fluid heat pipes

    Science.gov (United States)

    Morris, J. F.

    1981-01-01

    Thermionic energy conversion (TEC) and metallic-fluid heat pipes (MFHPs), offering unique advantages in terrestrial and space energy processing by virtue of operating on working-fluid vaporization/condensation cycles that accept great thermal power densities at high temperatures, share complex materials problems. Simplified equations are presented that verify and solve such problems, suggesting the possibility of cost-effective applications in the near term for TEC and MFHP devices. Among the problems discussed are: the limitation of alkali-metal corrosion, protection against hot external gases, external and internal vaporization, interfacial reactions and diffusion, expansion coefficient matching, and creep deformation.

  15. The effect of substrate bias voltages on impact resistance of CrAlN coatings deposited by modified ion beam enhanced magnetron sputtering

    Science.gov (United States)

    Chunyan, Yu; Linhai, Tian; Yinghui, Wei; Shebin, Wang; Tianbao, Li; Bingshe, Xu

    2009-01-01

    CrAlN coatings were deposited on silicon and AISI H13 steel substrates using a modified ion beam enhanced magnetron sputtering system. The effect of substrate negative bias voltages on the impact property of the CrAlN coatings was studied. The X-ray diffraction (XRD) data show that all CrAlN coatings were crystallized in the cubic NaCl B1 structure, with the (1 1 1), (2 0 0) (2 2 0) and (2 2 2) diffraction peaks observed. Two-dimensional surface morphologies of CrAlN coatings were investigated by atomic force microscope (AFM). The results show that with increasing substrate bias voltage the coatings became more compact and denser, and the microhardness and fracture toughness of the coatings increased correspondingly. In the dynamic impact resistance tests, the CrAlN coatings displayed better impact resistance with the increase of bias voltage, due to the reduced emergence and propagation of the cracks in coatings with a very dense structure and the increase of hardness and fracture toughness in coatings.

  16. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyun-Ju [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Jeong, Yong-Hoon [Biomechanics and Tissue Engineering Laboratory, Division of Orthodontics, College of Dentistry, The Ohio State University, Columbus, OH (United States); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials, Research Center of Nano-Interface Activation for Biomaterials, and Research Center for Oral Disease Regulation of the Aged, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Prosthodontics and Restorative Science, College of Dentistry, The Ohio State University, Columbus, OH (United States)

    2014-12-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO{sub 3}){sub 2} + 3 mM NH{sub 4}H{sub 2}PO{sub 4}. Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings.

  17. Hydroxyapatite formation on biomedical Ti–Ta–Zr alloys by magnetron sputtering and electrochemical deposition

    International Nuclear Information System (INIS)

    Kim, Hyun-Ju; Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

    2014-01-01

    The purpose of this study was to investigate hydroxyapatite formation on Ti-25Ta-xZr titanium alloys resulting from radio-frequency magnetron sputtering and electrochemical deposition. Electrochemical deposition of hydroxyapatite (HA) was first carried out using a cyclic voltammetry (CV) method at 80 °C in 5 mM Ca (NO 3 ) 2 + 3 mM NH 4 H 2 PO 4 . Then a physical vapor deposition (PVD) coating was obtained by a radio-frequency (RF) magnetron sputtering technique. The microstructures, phase transformations, and morphologies of the hydroxyapatite films deposited on the titanium alloys were analyzed by optical microscopy (OM), X-ray diffractometer (XRD), energy dispersive X-ray spectroscopy (EDS) and field-emission scanning electron microscopy (FE-SEM). The morphologies of electrochemically deposited HA showed plate-like shapes on the titanium alloys, and the morphologies of the RF-sputtered HA coating had the appearance droplet particles on the plate-like precipitates that had formed by electrochemical deposition. For the RF-sputtered HA coatings, the Ca/P ratio was increased, compared to that for the electrochemically deposited HA surface. Moreover, the RF-sputtered HA coating, consisting of agglomerated droplet particles on the electrochemically deposited HA surface, had better wettability compared to the bulk titanium alloy surface. - Highlights: • Hydroxyapatite (HA) was deposited on Ti–Ta–Zr alloys by radio-frequency (RF) magnetron sputtering and a cyclic voltammetry. • The morphologies of the RF-sputtered HA coating on electrochemical deposits presented plate-like shapes with a droplet particle. • The Ca/P ratio for RF-sputtered HA coatings was greater than that for electrochemical deposited HA coatings. • The RF-sputtered and electrochemical HA coatings had superior wettability compared to the electrochemically deposited coatings

  18. Reactive magnetron sputtering model at making Ti-TiOx coatings

    International Nuclear Information System (INIS)

    Luchkin, A G; Kashapov, N F

    2014-01-01

    Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

  19. Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Pei, Y.T.; Chen, C.Q.; Shaha, K.P.; De Hosson, J.Th.M.; Bradley, J.W.; Voronin, S.A.; Cada, M.

    2008-01-01

    In this paper, we report some striking results on the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering. The interface morphology and microstructure evolution as a function of pulse frequency and duty cycle were scrutinized using atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy techniques. It is shown that, with increasing pulse frequency, the nanocomposite coatings exhibit evolutions in morphology of the growing interface from rough to smooth and in the microstructure from strongly columnar to fully columnar-free. In addition, the smoothly growing interface favors the formation of a tailor-made multilayered nanocomposite structure. The fundamental mechanisms are analyzed with the assistance of plasma diagnostic experiments. Ion mass/energy spectrometry measurements reveal that, depending on the frequency and duty cycle of DC pulses, pulsing of the magnetrons can control the flux and energy distribution of Ar + ions over a very broad range for concurrent impingement on the growing interface of deposited coatings, in comparison with DC sputtering. The significantly enhanced energy flux density is thought to be responsible for the 'adatom transfer' in interface smoothening and thus the restraint of columnar growth

  20. Binding energy effects in cascade evolution and sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1995-06-01

    The MARLOWE model was extended to include a binding energy dependent on the local crystalline order, so that atoms are bound less strongly to their lattice sites near surfaces or associated damage. Sputtering and cascade evolution were studied on the examples of self-ion irradiations of Cu and Au monocrystals. In cascades, the mean binding energy is reduced ∼8% in Cu with little dependence on the initial recoil energy; in Au, it is reduced ∼9% at 1 keV and ∼15% at 100 keV. In sputtering, the mean binding energy is reduced ∼8% in Cu and ∼15% in Au with little energy dependence; the yields are increased about half as much. Most sites from which sputtered atoms originate are isolated in both metals. Small clusters of such sites occur in Cu, but there are some large clusters in Au, especially in [111] targets. There are always more large clusters with damage-dependent binding than with a constant binding energy, but only a few clusters are compact enough to be regarded as pits

  1. Monocrystal sputtering by the computer simulation code ACOCT

    International Nuclear Information System (INIS)

    Yamamura, Yasunori; Takeuchi, Wataru.

    1987-09-01

    A new computer code ACOCT has been developed in order to simulate the atomic collisions in the crystalline target within the binary collision approximation. The present code is more convenient as compared with the MARLOWE code, and takes the higher-order simultaneous collisions into account. To cheke the validity of the ACOCT program, we have calculated sputtering yields for various ion-target combinations and compared with the MARLOWE results. It is found that the calculated yields by the ACOCT program are in good agreements with those by the MARLOWE code. The ejection patterns of sputtered atoms were also calculated for the major surfaces of fcc, bcc, diamond and hcp structures, and we have got reasonable agreements with experimental results. In order to know the effects of the simultaneous collision in the slowing down process the sputtering yields and the projected ranges are calculated, changeing the parameter of the criterion for the simultaneous collision, and the effect of the simultaneous collision is found to depend on the crystal orientation. (author)

  2. Prototype inverted sputter source for negative heavy ions

    International Nuclear Information System (INIS)

    Minehara, Eisuke; Kobayashi, Chiaki; Kikuchi, Shiroh

    1977-10-01

    A sputter source from which negative heavy ion beam is extracted through a tungsten wire and disc ionizer was built and tested. An alkali metal surface ionization gun with the ionizer is described, and also performance of the surface ionization gun and of the sputter source for negative heavy ions using the gun is reported. The gun was tested for three alkali metals, i.e. sodium, potassium and cesium. Total potassium beam current of 1-2mA was obtained at entrance aperture of the magnet. Sputtering materials and gases for producing negative heavy ions are carbon, copper, aluminium, molybdenum, oxygen and air. With carbon and leakage air, the beam intensities analyzed are: 2-5μA (at Faraday cup) and 4.6-11μA (at exit slit) for C - , 3-5μA (at Faraday cup) and 6.8-11μA (at exit slit) for 2C - , and 11-15μA (at Faraday cup) and 25-34μA (at exit slit) for O - . Total beam current at the entrance aperture was 200-400μA. (auth.)

  3. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  4. Properties of tungsten films prepared by magnetron sputtering

    International Nuclear Information System (INIS)

    Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

    1986-01-01

    High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

  5. Adherence of diamond films on refractory metal substrates for thermionic applications

    International Nuclear Information System (INIS)

    Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

    1991-01-01

    Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

  6. Tribological properties, corrosion resistance and biocompatibility of magnetron sputtered titanium-amorphous carbon coatings

    International Nuclear Information System (INIS)

    Dhandapani, Vishnu Shankar; Subbiah, Ramesh; Thangavel, Elangovan; Arumugam, Madhankumar; Park, Kwideok; Gasem, Zuhair M.; Veeraragavan, Veeravazhuthi; Kim, Dae-Eun

    2016-01-01

    Highlights: • a-C:Ti nanocomposite coatings were prepared on 316L stainless steel by using R.F. magnetron sputtering method. • Properties of the nanocomposite coatings were analyzed with respect to titanium content. • Corrosion resistance, biocompatibility and hydrophobicity of nanocomposite coating were enhanced with increasing titanium content. • Coating with 2.33 at.% titanium showed superior tribological properties compared to other coatings. - Abstract: Amorphous carbon incorporated with titanium (a-C:Ti) was coated on 316L stainless steel (SS) by magnetron sputtering technique to attain superior tribological properties, corrosion resistance and biocompatibility. The morphology, topography and functional groups of the nanostructured a-C:Ti coatings in various concentrations were analyzed using atomic force microscopy (AFM), Raman, X-Ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Raman and XPS analyses confirmed the increase in sp"2 bonds with increasing titanium content in the a-C matrix. TEM analysis confirmed the composite nature of the coating and the presence of nanostructured TiC for Ti content of 2.33 at.%. This coating showed superior tribological properties compared to the other a-C:Ti coatings. Furthermore, electrochemical corrosion studies were performed against stimulated body fluid medium in which all the a-C:Ti coatings showed improved corrosion resistance than the pure a-C coating. Preosteoblasts proliferation and viability on the specimens were tested and the results showed that a-C:Ti coatings with relatively high Ti (3.77 at.%) content had better biocompatibility. Based on the results of this work, highly durable coatings with good biocompatibility could be achieved by incorporation of optimum amount of Ti in a-C coatings deposited on SS by magnetron sputtering technique.

  7. Towards a magnetic field separation in Ion Beam Sputtering processes

    Energy Technology Data Exchange (ETDEWEB)

    Malobabic, Sina, E-mail: s.malobabic@lzh.de [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Jupé, Marco [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany); Kadhkoda, Puja [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Ristau, Detlev [Laser Zentrum Hannover e.V., Hollerithallee 8, 30419 Hannover (Germany); Quest: Centre of Quantum Engineering and Space-Time Research, Leibniz Universität Hannover (Germany)

    2015-10-01

    Defects embedded in coatings due to particle contamination are considered as a primary factor limiting the quality of optical coatings in Ion Beam Sputtering. An approach combining the conventional Ion Beam Sputtering process with a magnetic separator in order to remove these particles from film growth is presented. The separator provides a bent axial magnetic field that guides the material flux towards the substrate positioned at the exit of the separator. Since there is no line of sight between target and substrate, the separator prevents that the particles generated in the target area can reach the substrate. In this context, optical components were manufactured that reveal a particle density three times lower than optical components which were deposited using a conventional Ion Beam Sputtering process. - Highlights: • We use bent magnetic fields to guide and separate the sputtered deposition material. • No line of sight between substrate and target prevents thin films from particles. • The transport efficiency of binary and ternary oxides is investigated. • The defect statistics of manufactured dielectric ternary multilayers are evaluated. • The phase separation leads to a drastically reduction of particle contamination.

  8. Investigations into the Anti-Felting Properties of Sputtered Wool Using Plasma Treatment

    International Nuclear Information System (INIS)

    Borghei, S. M.; Shahidi, S.; Ghoranneviss, M.; Abdolahi, Z.

    2013-01-01

    In this research the effects of mordant and plasma sputtering treatments on the crystallinity and morphological properties of wool fabrics were investigated. The felting behavior of the treated samples was also studied. We used madder as a natural dye and copper sulfate as a metal mordant. We also used copper as the electrode material in a DC magnetron plasma sputtering device. The anti-felting properties of the wool samples before and after dying was studied, and it was shown that the shrink resistance and anti-felting behavior of the wool had been significantly improved by the plasma sputtering treatment. In addition, the percentage of crystallinity and the size of the crystals were investigated using an X-ray diffractometer, and a scanning electron microscope was used for morphological analysis. The amount of copper particles on the surface of the mordanted and sputtered fabrics was studied using the energy dispersive X-ray (EDX) method, and the hydrophobic properties of the samples were examined using the water drop test. The results show that with plasma sputtering treatment, the hydrophobic properties of the surface of wool become super hydrophobic.

  9. Effects of a FeCrAl layer fabricated by sputtering process on pool boiling critical heat flux

    International Nuclear Information System (INIS)

    Seo, Gwang Hyeok; Son, Hong Hyun; Jeun, Gyoodong; Kim, Sung Joong

    2016-01-01

    The thermal safety margin of a FeCrAl-layered heater was investigated measuring pool boiling critical heat flux (CHF). Boiling experiments were conducted in a pool of deionized water at atmospheric pressure. For a comparison work, bare and FeCrAl-layered heater samples were prepared. The sputtering technique was employed to fabricate the FeCrAl layer. It was confirmed that the key sputtering parameters on the surface structure were substrate temperature and deposition time. As compared to the bare sample, surface wettability and roughness increased. Higher values of the surface roughness were observed at temperatures of 150degC and 600degC. The FeCrAl-layered heaters showed improved CHF up to ∼40%. The highest enhancement of 42% was observed for the heater sample fabricated at a substrate temperature of 150degC. With employing recent CHF models that incorporate the surface effects, it was evaluated that increased roughness at the micrometer scale mainly contributed to the CHF enhancement. Furthermore, visual observations showed at least 2 msec reduction in the rewetting times for the FeCrAl-layered heaters, and the improved CHF may be attributed to the suppressed hot dry spots due to the rewetting phenomena. (author)

  10. Contribution to the study of sputtering and damage of uranium dioxide by fast heavy ions

    International Nuclear Information System (INIS)

    Schlutig, S.

    2001-03-01

    Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO 2 targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models proposed in the literature and it seems that the supersonic gas flow model is well suited to describe our results. Finally, the sputtering yields are compared with a set of earlier experimental data on uranium dioxide damage obtained by T. Wiss and we observe that only a small fraction of UO 2 monolayers are sputtered. (author)

  11. Intrinsic ZnO films fabricated by DC sputtering from oxygen-deficient targets for Cu(In,Ga)Se2 solar cell application

    Institute of Scientific and Technical Information of China (English)

    Chongyin Yang; DongyunWan; Zhou Wang; Fuqiang Huang

    2011-01-01

    Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (In, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.%Intrinsic zinc oxide films,normally deposited by radio frequency (RF) sputtering,are fabricated by direct current (DC) sputtering.The oxygen-deficient targets are prepared via a newly developed double crucible method.The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film.This is achieved by the widely used RF sputtering,which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells.The optimal ZnO film is used in a Cu (In,Ga) Se2 (C1GS) solar cell with a high efficiency of 11.57%.This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.High resistance transparent intrinsic zinc oxide (i-ZnO)thin film has been widely nsed as the front electrode in transparent electronics and photovoltaic devices because of its low cost and nontoxicity.Owing to its unique characteristics of high transparency and adjustable resistivity in a certain range,the use of i-ZnO thin films as diffusion barrier layers of a-Si/μc-Si,CdTe,and CIGS thin-film solar cells has been advantageous

  12. Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

    2013-01-01

    We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

  13. Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system

    International Nuclear Information System (INIS)

    Iwase, Hideo; Hoshi, Youichi; Kameyama, Makoto

    2006-01-01

    Distribution of the electrical properties of indium-tin oxide (ITO) film prepared by both a planar-magnetron sputtering system (PMSS) and a facing-targets sputtering system (FTSS) at room temperature were investigated. It was found that the outstanding non-uniformities of the electrical properties in noncrystalline ITO films are mainly due to the variation of the oxygen stoichiometry dependent on film positions on substrate surfaces. Furthermore, ITO film with uniform distribution of electrical properties was obtainable using FTSS

  14. Investigation of magnetic anisotropy and role of underlayer in obliquely sputtered metallic thin films

    International Nuclear Information System (INIS)

    Lisfi, A.; Nguyen, L.T.; Lodder, J.C.; Williams, C.M.

    2004-01-01

    Co and Co-Ni films have been obliquely sputtered on polyethylene terephthalate (PET) with and without Cr underlayer. The spin-reorientation observed in films directly deposited on PET is related to the low magnetocrystalline anisotropy of Co (FCC) and change in microstructure from columns to elongated nuclei. Cr underlayer enhances magnetic anisotropy due to HCP structure of Co, which dominates the shape of columns. The double switching in Co/Cr films grown at 70 deg. is a consequence of low packing density of Cr columns of the underlayer

  15. Effect of positively charged particles on sputtering damage of organic electro-luminescent diodes with Mg:Ag alloy electrodes fabricated by facing target sputtering

    Directory of Open Access Journals (Sweden)

    Kouji Suemori

    2017-04-01

    Full Text Available We investigated the influence of the positively charged particles generated during sputtering on the performances of organic light-emitting diodes (OLEDs with Mg:Ag alloy electrodes fabricated by sputtering. The number of positively charged particles increased by several orders of magnitude when the target current was increased from 0.1 A to 2.5 A. When a high target current was used, many positively charged particles with energies higher than the bond energy of single C–C bonds, which are typically found in organic molecules, were generated. In this situation, we observed serious OLED performance degradation. On the other hand, when a low target current was used, OLED performance degradation was not observed when the number of positively charged particles colliding with the organic underlayer increased. We concluded that sputtering damage caused by positively charged particles can be avoided by using a low target current.

  16. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Mi, Shu, E-mail: mishu@buaa.edu.cn; Liu, Rui, E-mail: liurui1987@buaa.edu.cn; Li, Yuanyuan, E-mail: buaaliyuan@163.com; Ye, Jun, E-mail: yejun@iphy.ac.cn; Xie, Yong, E-mail: xiey@buaa.edu.cn; Chen, Ziyu, E-mail: chenzy@buaa.edu.cn

    2016-04-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1{sub 0} phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  17. Effect of sputter pressure on magnetotransport properties of FePt nanocomposites

    International Nuclear Information System (INIS)

    Mi, Shu; Liu, Rui; Li, Yuanyuan; Ye, Jun; Xie, Yong; Chen, Ziyu

    2016-01-01

    FePt films were prepared by magnetron sputtering deposition using Ar as the sputtering gas under different working pressures (0.3–0.7 Pa). The effect of sputtering gas pressure on the microstructure, magnetic, and magnetoresistance properties has been investigated. The results show that the crystallization of FePt films is strongly dependent on the Ar sputter pressure. With the decrease of Ar working pressures, the fct phase forms and the coercivity (Hc) of FePt films rises under the same annealing temperature. As a result, the giant magnetoresistance (GMR) increases by 20% at the room temperature. At 0.7 Pa, the anisotropy magnetoresistance (AMR) can be observed clearly at a low field. However, as the Ar pressure decreases, the increase of GMR leads to a degradation of AMR effect. We believe that the improvement of GMR effect results from the increase of magnetic anisotropy and spin polarization in the process of transformation from the soft magnetic fcc phase to the hard magnetic fct phase. - Highlights: • FePt films were sputtered under different Ar working pressures. • The low Ar pressure promotes the formation of L1 0 phase. • The Hc of FePt films enlarges with the reduction of Ar pressure. • As the Ar pressure decreases, the MR increases by 20%. • The total MR results from the competition of GMR and AMR.

  18. Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

    Energy Technology Data Exchange (ETDEWEB)

    Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

    2009-03-15

    Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

  19. Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and X-ray photoelectron spectroscopy (XPS. Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111 underlayer enhanced the (001 orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111 textured film at 700 °C and directly onto (100 Si wafers showed relatively larger (011 and diminished intensity (00ℓ diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er and resistivity (r of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively.

  20. Formation of carbon nanotubes in the graphite surface by Ar ion sputtering

    International Nuclear Information System (INIS)

    Wang Zhenxia; Zhu Fuying; Wang Wenmin; Yu Guoqing; Ruan Meiling; Zhang Huiming; Zhu Jingping

    1998-01-01

    The authors have investigated structures and topography features of sputtered graphite surface using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), and demonstrated that carbon nanotubes can be grown up by sputtered-atom deposition on a protrusion of topography feature

  1. Rf reactive sputtering of indium-tin-oxide films

    International Nuclear Information System (INIS)

    Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

    1986-01-01

    Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

  2. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  3. Cholesterol biosensor based on rf sputtered zinc oxide nanoporous thin film

    International Nuclear Information System (INIS)

    Singh, S. P.; Arya, Sunil K.; Pandey, Pratibha; Malhotra, B. D.; Saha, Shibu; Sreenivas, K.; Gupta, Vinay

    2007-01-01

    Cholesterol oxidase (ChOx) has been immobilized onto zinc oxide (ZnO) nanoporous thin films grown on gold surface. A preferred c-axis oriented ZnO thin film with porous surface morphology has been fabricated by rf sputtering under high pressure. Optical studies and cyclic voltammetric measurements show that the ChOx/ZnO/Au bioelectrode is sensitive to the detection of cholesterol in 25-400 mg/dl range. A relatively low value of enzyme's kinetic parameter (Michaelis-Menten constant) ∼2.1 mM indicates enhanced enzyme affinity of ChOx to cholesterol. The observed results show promising application of nanoporous ZnO thin film for biosensing application without any functionalization

  4. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  5. Surface functionalization of nanostructured LaB{sub 6}-coated Poly Trilobal fabric by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yan, E-mail: wuyanchn@hotmail.com [Mechanical and Electrical Engineering Branch, Jiaxing Nanyang Polytechnic Institute, Jiaxing 314003 (China); Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Zhang, Lin, E-mail: zhanglin2007@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Min, Guanghui, E-mail: ghmin@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China); Yu, Huashun; Gao, Binghuan; Liu, Huihui; Xing, Shilong; Pang, Tao [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061 (China)

    2016-10-30

    Highlights: • Nanostructured LaB{sub 6} films were deposited on flexible textile substrates by dc magnetron sputtering. • The pronounced influence of the working pressure on the morphologies and optical properties of LaB{sub 6} films has been revealed. • The concept of Ultraviolet Protection Factor (UPF) was employed and LaB{sub 6}-coated PET textiles with ultraviolet protection ability were obtained. - Abstract: Nanostructured LaB{sub 6} films were deposited on flexible Poly Trilobal substrates (PET textiles) through direct current magnetron sputtering in order to broaden its applications and realize surface functionalization of polyester fabrics. Characterizations and performances were investigated by employing a scanning electron microscope (SEM), Fourier transformation infrared spectroscopy (FT-IR) and ultraviolet-visible (UV–vis) spectrophotometer. Ultraviolet Protection Factor (UPF) conducted by the integral conversion was employed to measure the ultraviolet protection ability. As expected, the growth of LaB{sub 6} film depending on the pressure variation enhanced UV-blocking ability (UPF rating at 30.17) and absorption intensity of the textiles.

  6. Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2015-04-16

    In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

  7. Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

    Science.gov (United States)

    Tak, Young Jun; Du Ahn, Byung; Park, Sung Pyo; Kim, Si Joon; Song, Ae Ran; Chung, Kwun-Bum; Kim, Hyun Jae

    2016-01-01

    Indium–gallium–zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M–O) bonds through the decomposition-rearrangement of M–O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm2/Vs, 3.96 × 107 to 1.03 × 108, and 11.2 to 7.2 V, respectively. PMID:26902863

  8. The crystallization and properties of sputter deposited lithium niobite

    Energy Technology Data Exchange (ETDEWEB)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W., E-mail: alan.doolittle@ece.gatech.edu

    2016-06-30

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO{sub 2}) is performed by co-deposition from a lithium oxide (Li{sub 2}O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO{sub 2}. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO{sub 2} films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO{sub 2}) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material.

  9. The crystallization and properties of sputter deposited lithium niobite

    International Nuclear Information System (INIS)

    Shank, Joshua C.; Brooks Tellekamp, M.; Alan Doolittle, W.

    2016-01-01

    Sputter deposition of the thin film memristor material, lithium niobite (LiNbO_2) is performed by co-deposition from a lithium oxide (Li_2O) and a niobium target. Crystalline films that are textured about the (101) orientation are produced under room temperature conditions. This material displays memristive hysteresis and exhibits XPS spectra similar to MBE and bulk grown LiNbO_2. Various deposition parameters were investigated resulting in variations in the deposition rate, film crystallinity, oxygen to niobium ratio, and mean niobium oxidation state. The results of this study allow for the routine production of large area LiNbO_2 films at low substrate temperature useful in hybrid-integration of memristor, optical, and energy storage applications. - Highlights: • Room temperature sputter deposition of crystalline lithium niobite (LiNbO_2) • Contrast with previous high temperature corrosive growth methods • Analysis of sputter deposition parameters on the chemical and physical properties of the deposited material

  10. Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

    Science.gov (United States)

    Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

    2015-04-29

    Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed.

  11. Energy dependence of sputtering yields of Be, Be-C and Be-W films by Be{sup +}-ions

    Energy Technology Data Exchange (ETDEWEB)

    Korshunov, S.N.; Guseva, M.I.; Gureev, V.M.; Neumoin, V.E.; Stoljarova, V.G. [Russian Research Center Kurchatov Inst., Moscow (Russian Federation)

    1998-01-01

    The energy dependence measurements of Be, Be-C and Be-W deposited layer sputtering yields by Be{sup +}-ions were performed. The ion energy was varied in the range (0.3-5.0) keV. The temperature in the process of irradiation was sustained at the level of 670 K. The mixed layers were prepared by simultaneous sputtering of pair targets, Be and C, Be and W, and Be-targets with Ar{sup +}- and Be{sup +}-ions and codeposition of the sputtered atoms on silicon collectors The codeposited layer thickness was changed in the range of (500-1000) nm. The content of oxigen in the Be, Be-C, Be-W deposited layers did not exceed 20 at.%. The mixed layer sputtering yields were compared with the experimental and calculated data, obtained for the self-sputtering yields of beryllium and carbon. It was found that the sputtering yields of the Be-C and Be deposited layers by Be{sup +}-ions in the energy range (0.3-5.0) keV are within the range between the corresponding self-sputtering yields for Be and C. The sputtering yields for the mixture Be-W are close to the corresponding self-sputtering yields of beryllium. (author)

  12. Angular distributions of particles sputtered from polycrystalline platinum by low-energy ions

    International Nuclear Information System (INIS)

    Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

    2000-01-01

    The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 3-9 keV Ne + bombardment at normal ion incidence are presented. It was found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of an ion energy. Comparison with the previously obtained data for He + and Ar + ions have shown that the shape of the angular distribution does not depend on the bombarding ion species. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for Ne ion bombardment were performed and the comparison with corresponding data for He and Ar bombarding was made. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

  13. Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

    Science.gov (United States)

    Bescond, M.; Logoteta, D.; Michelini, F.; Cavassilas, N.; Yan, T.; Yangui, A.; Lannoo, M.; Hirakawa, K.

    2018-02-01

    We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green’s function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.

  14. Copper deposition on fabrics by rf plasma sputtering for medical applications

    International Nuclear Information System (INIS)

    Segura, G; Guzmán, P; Barrantes, Y; Navarro, G; Asenjo, J; Guadamuz, S; Vargas, VI; Zuñiga, P; Chaves, S; Chaves, J

    2015-01-01

    The present work is about preparation and characterization of RF sputtered Cu films on cotton by the usage of a Magnetron Sputter Source and 99.995% purity Cu target at room temperature. Cotton fabric samples of 1, 2 and 4 min of sputtering time at discharge pressure of 1×10 −2 Torr and distance between target and sample of 8 cm were used. The main goal was to qualitatively test the antimicrobial action of copper on fabrics. For that purpose, a reference strain of Escherichia Coli ATCC 35218 that were grown in TSA plates was implemented. Results indicated a decrease in the growth of bacteria by contact with Cu; for fabric samples with longer sputtering presented lower development of E. coli colonies. The scope of this research focused on using these new textiles in health field, for example socks can be made with this textile for the treatment of athlete's foot and the use in pajamas, sheets, pillow covers and robes in hospital setting for reducing the spread of microorganisms. (paper)

  15. I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

    Directory of Open Access Journals (Sweden)

    M. Erkovan

    2013-01-01

    Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

  16. Determination of rare earth elements in high purity rare earth oxides by liquid chromatography, thermionic mass spectrometry and combined liquid chromatography/thermionic mass spectrometry

    International Nuclear Information System (INIS)

    Stijfhoorn, D.E.; Stray, H.; Hjelmseth, H.

    1993-01-01

    A high-performance liquid chromatographic (HPLC) method for the determination of rare earth elements in rocks has been modified and used for the determination of rare earth elements (REE) in high purity rare earth oxides. The detection limit was 1-1.5 ng or 2-3 mg/kg when a solution corresponding to 0.5 mg of the rare earth oxide was injected. The REE determination was also carried out by adding a mixture of selected REE isotopes to the sample and analysing the collected HPLC-fractions by mass spectrometry (MS) using a thermionic source. Since the matrix element was not collected, interference from this element during the mass spectrometric analysis was avoided. Detection limits as low as 0.5 mg/kg could then be obtained. Detection limits as low as 0.05 mg/kg were possible by MS without HPLC-pre-separation, but this approach could only be used for those elements that were not affected by the matrix. Commercial samples of high purity Nd 2 O 3 , Gd 2 O 3 and Dy 2 O 3 were analysed in this study, and a comparison of results obtained by HPLC, combined HPLC/MS and direct MS is presented. (Author)

  17. Sputtering of solid nitrogen and oxygen by keV hydrogen ions

    DEFF Research Database (Denmark)

    Ellegaard, O.; Schou, Jørgen; Stenum, B.

    1994-01-01

    Electronic sputtering of solid nitrogen and oxygen by keV hydrogen ions has been studied at two low-temperature setups. The yield of the sputtered particles has been determined in the energy regime 4-10 keV for H+, H-2+ and H-3+ ions. The yield for oxygen is more than a factor of two larger than...... that for nitrogen. The energy distributions of the sputtered N2 and O2 molecules were measured for hydrogen ions in this energy regime as well. The yields from both solids turn out to depend on the sum of the stopping power of all atoms in the ion. The yield increases as a quadratic function of the stopping power...

  18. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  19. Enhancement of Ti-containing hydrogenated carbon (Ti-C:H) films by high-power plasma-sputtering

    International Nuclear Information System (INIS)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-01-01

    Ti-containing amorphous hydrogenated carbon (Ti-C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C 2 H 2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Ti-TiC-DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Ti-C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

  20. Enhancement of Ti-containing hydrogenated carbon (Tisbnd C:H) films by high-power plasma-sputtering

    Science.gov (United States)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-02-01

    Ti-containing amorphous hydrogenated carbon (Tisbnd C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Tisbnd TiCsbnd DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Tisbnd C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.