Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

Directory of Open Access Journals (Sweden)

Alex Croot

2017-11-01

Full Text Available Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

International Nuclear Information System (INIS)

Onufriyev, Valery V.

2001-01-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

Science.gov (United States)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Electron injection in diodes with field emission

International Nuclear Information System (INIS)

Denavit, J.; Strobel, G.L.

1986-01-01

This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

Transition to chaos in periodically driven thermionic diodes at low pressure

International Nuclear Information System (INIS)

Klinger, T.; Timm, R.; Piel, A.

1992-01-01

The static I(U) characteristic of thermionic diodes at mbar pressures shows a large hysteresis, which describes the transition from the 'anode-glow-mode' (AGM), with essentially negative plasma potential, to the 'temperature-limited-mode' (TLM), with positive plasma potential. Many features of these modes are also found in magnetic-box discharges with filament cathodes at pressures of 10 -2 -10 -1 Pa. Although these two pressure regimes are basically different concerning the transport properties (diffusion vs. free streaming), the elementary processes that establish the AGM in the low pressure regime are very similar to the high pressure regime. Ions are produced in that part of the anode sheath where the potential exceeds the ionization energy. The production rate is enhanced by multiple reflections of electrons between the magnetic fields of the permanent magnet array at the anode and the repulsive potential of the cathode plasma. Although the mean free path for charge exchange or elastic collisions substantially exceeds the anode-cathode distance, some few ions are stopped and trapped within the potential well of the virtual cathode. This accumulation of ions forms a cathodic plasma, which is essentially at cathode potential. Plasma formation in the anode sheath is suppressed as long as the ion production time is larger than the ion transit time through the sheath. These model ideas are supported by 1d-Particle-in-cell simulations using a modified PDP1-code. The AGM is attractive for studies of nonlinear dynamics because of its feedback processes and oscillations, which occur close to the hysteresis point. (author) 7 refs., 3 figs

Near-field enhanced thermionic energy conversion for renewable energy recycling

Science.gov (United States)

Ghashami, Mohammad; Cho, Sung Kwon; Park, Keunhan

2017-09-01

This article proposes a new energy harvesting concept that greatly enhances thermionic power generation with high efficiency by exploiting the near-field enhancement of thermal radiation. The proposed near-field enhanced thermionic energy conversion (NETEC) system is uniquely configured with a low-bandgap semiconductor cathode separated from a thermal emitter with a subwavelength gap distance, such that a significant amount of electrons can be photoexcited by near-field thermal radiation to contribute to the enhancement of thermionic current density. We theoretically demonstrate that the NETEC system can generate electric power at a significantly lower temperature than the standard thermionic generator, and the energy conversion efficiency can exceed 40%. The obtained results reveal that near-field photoexcitation can enhance the thermionic power output by more than 10 times, making this hybrid system attractive for renewable energy recycling.

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Thermionic integrated circuit technology for high power space applications

International Nuclear Information System (INIS)

Yadavalli, S.R.

1984-01-01

Thermionic triode and integrated circuit technology is in its infancy and it is emerging. The Thermionic triode can operate at relatively high voltages (up to 2000V) and at least tens of amperes. These devices, including their use in integrated circuitry, operate at high temperatures (800 0 C) and are very tolerant to nuclear and other radiations. These properties can be very useful in large space power applications such as that represented by the SP-100 system which uses a nuclear reactor. This paper presents an assessment of the application of thermionic integrated circuitry with space nuclear power system technology. A comparison is made with conventional semiconductor circuitry considering a dissipative shunt regulator for SP-100 type nuclear power system rated at 100 kW. The particular advantages of thermionic circuitry are significant reductions in size and mass of heat dissipation and radiation shield subsystems

In-pile and out-of-pile testing of a molybdenum-uranium dioxide cermet fueled themionic diode

Science.gov (United States)

Diianni, D. C.

1972-01-01

The behavior of Mo-UO2 cermet fuel in a diode for thermionic reactor application was studied. The diode had a Mo-0.5 Ti emitter and niobium collector. Output power ranged from 1.4 to 2.8 W/cm squared at emitter and collector temperatures of 1500 deg and 540 C. Thermionic performance was stable within the limits of the instrumentation sensitivity. Through 1000 hours of in-pile operation the emitter was dimensionally stable. However, some fission gases (15 percent) leaked through an inner clad imperfection that occurred during fuel fabrication.

The Thermionic System Evaluation Test (TSET): Descriptions, limitations, and the involvement of the space nuclear power community

International Nuclear Information System (INIS)

Morris, D.B.

1993-01-01

Project and test planning for the Thermionic System Evaluation Test (TSET) Project began in August 1990. Since the formalization of the contract agreement two years ago, the TOPAZ-II testing hardware was delivered in May 1992. In the months since the delivery of the test hardware, Russians and Americans working side-by-side installed the equipment and are preparing to begin testing in early 1993. The procurement of the Russian TOPAZ-II unfueled thermionic space nuclear power system (SNP) provides a unique opportunity to understand a complete thermionic system and enhances the possibility for further study of this type of power conversion for space applications. This paper will describe the program and test article, facility and test article limitations, and how the government and industry are encouraged to be involved in the program

Photophysics of fullerenes: Thermionic emission

International Nuclear Information System (INIS)

Compton, R.N.; Tuinman, A.A.; Huang, J.

1996-01-01

Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C 60 excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs + is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C 60 in the energy range from 8 to 12 eV results in C 60 anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements

Photophysics of fullerenes: Thermionic emission

Energy Technology Data Exchange (ETDEWEB)

Compton, R.N. [Univ. of Tennessee, Knoxville, TN (United States)]|[Oak Ridge National Lab., TN (United States); Tuinman, A.A. [Univ. of Tennessee, Knoxville, TN (United States); Huang, J. [Ames Lab., IA (United States)

1996-09-01

Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C{sub 60} excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs{sup +} is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C{sub 60} in the energy range from 8 to 12 eV results in C{sub 60} anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements.

Thermionic reactors for space nuclear power

Science.gov (United States)

Homeyer, W. G.; Merrill, M. H.; Holland, J. W.; Fisher, C. R.; Allen, D. T.

1985-01-01

Thermionic reactor designs for a variety of space power applications spanning the range from 5 kWe to 3 MWe are described. In all of these reactors, nuclear heat is converted directly to electrical energy in thermionic fuel elements (TFEs). A circulating reactor coolant carries heat from the core of TFEs directly to a heat rejection radiator system. The recent design of a thermionic reactor to meet the SP-100 requirements is emphasized. Design studies of reactors at other power levels show that the same TFE can be used over a broad range in power, and that design modifications can extend the range to many megawatts. The design of the SP-100 TFE is similar to that of TFEs operated successfully in test reactors, but with design improvements to extend the operating lifetime to seven years.

Thermionic conversion reactor technology assessment. Final report

International Nuclear Information System (INIS)

1984-02-01

The in-core thermionic space nuclear power supply may be the only identified reactor-power concept that can meet the SP-100 size functional requirements with demonstrated state-of-the-art reactor system and space-qualified power system component temperatures. The SP-100 configuration limits provide a net 40 m 2 of primary non-deployed radiator area. If a reasonable 7-year degradation allowance of 15% to 20% is provided then the beginning of life (BOL) net power output requirement is about 120 kWe. Consequently, the SP-100 power system must produce a P/A of 2.7 kWe/m 2 . This non-deployed radiator area power density performance can only be reasonably achieved by the thermionic in-core convertr system, the potassium Rankine turbine system and the Stirling engine system. The purpose of this study is to examine past and current tests and data, and to assess the potential for successful development of suitable fueled-thermionic converters that will meet SP-100 and growth requirements. The basis for the assessment will be provided and the recommended key developments plan set forth

System modeling and reactor design studies of the Advanced Thermionic Initiative space nuclear reactor

International Nuclear Information System (INIS)

Lee, H.H.; Abdul-Hamid, S.; Klein, A.C.

1996-01-01

In-core thermionic space reactor design concepts that operate at a nominal power output range of 20 to 50 kW(electric) are described. Details of the neutronic, thermionic, thermal hydraulics, and shielding performance are presented. Because of the strong absorption of thermal neutrons by natural tungsten and the large amount of natural tungsten within the reactor core, two designs are considered. An overall system design code has been developed at Oregon State University to model advanced in-core thermionic energy conversion-based nuclear reactor systems for space applications. The results show that the driverless single-cell Advanced Thermionic Initiative (ATI) configuration, which does not have driver fuel rods, proved to be more efficient than the driven core, which has driver rods. The results also show that the inclusion of the true axial and radial power distribution decrease the overall conversion efficiency. The flattening of the radial power distribution by three different methods would lead to a higher efficiency. The results show that only one TFE works at the optimum emitter temperature; all other TFEs are off the optimum performance and result in a 40% decrease of the efficiency of the overall system. The true axial profile is significantly different as there is a considerable amount of neutron leakage out of the top and bottom of the reactor. The analysis reveals that the axial power profile actually has a chopped cosine shape. For this axial profile, the reactor core overall efficiency for the driverless ATI reactor version is found to be 5.84% with a total electrical power of 21.92 kW(electric). By considering the true axial power profile instead of the uniform power profile, each TFE loses ∼80 W(electric)

Current transport across the pentacene/CVD-grown graphene interface for diode applications

International Nuclear Information System (INIS)

Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

2012-01-01

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole-Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole-Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole-Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface. (paper)

Current transport across the pentacene/CVD-grown graphene interface for diode applications.

Science.gov (United States)

Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

2012-06-27

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole–Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole–Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole–Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

Thermionic system evaluation test (TSET) facility construction: A United States and Russian effort

International Nuclear Information System (INIS)

Wold, S.K.

1993-01-01

The Thermionic System Evaluation Test (TSET) is a ground test of an unfueled Russian TOPAZ-II in-core thermionic space reactor powered by electric heaters. The facility that will be used for testing of the TOPAZ-II systems is located at the New Mexico Engineering Research Institute (NMERI) complex in Albuquerque, NM. The reassembly of the Russian test equipment is the responsibility of International Scientific Products (ISP), a San Jose, CA, company and Inertek, a Russian corporation, with support provided by engineers and technicians from Phillips Laboratory (PL), Sandia National Laboratories (SNL), Los Alamos National Laboratory (LANL), and the University of New Mexico (UNM). This test is the first test to be performed under the New Mexico Strategic Alliance agreement. This alliance consists of the PL, SNL, LANL, and UNM. The testing is being funded by the Strategic Defense Initiative Organization (SDIO) with the PL responsible for project execution

Thermionic emission from monolayer graphene, sheath formation and its feasibility towards thermionic converters

Science.gov (United States)

Misra, Shikha; Upadhyay Kahaly, M.; Mishra, S. K.

2017-02-01

A formalism describing the thermionic emission from a single layer graphene sheet operating at a finite temperature and the consequent formation of the thermionic sheath in its proximity has been established. The formulation takes account of two dimensional densities of state configuration, Fermi-Dirac (f-d) statistics of the electron energy distribution, Fowler's treatment of electron emission, and Poisson's equation. The thermionic current estimates based on the present analysis is found to be in reasonably good agreement with experimental observations (Zhu et al., Nano Res. 07, 1 (2014)). The analysis has further been simplified for the case where f-d statistics of an electron energy distribution converges to Maxwellian distribution. By using this formulation, the steady state sheath features, viz., spatial dependence of the surface potential and electron density structure in the thermionic sheath are derived and illustrated graphically for graphene parameters; the electron density in the sheath is seen to diminish within ˜10 s of Debye lengths. By utilizing the graphene based cathode in configuring a thermionic converter (TC), an appropriate operating regime in achieving the efficient energy conversion has been identified. A TC configured with the graphene based cathode (operating at ˜1200 K/work function 4.74 V) along with the metallic anode (operating at ˜400 K/ work function 2.0 V) is predicted to display ˜56% of the input thermal flux into the electrical energy, which infers approximately ˜84% of the Carnot efficiency.

Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

International Nuclear Information System (INIS)

Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

2013-01-01

Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

Investigation of significantly high barrier height in Cu/GaN Schottky diode

Directory of Open Access Journals (Sweden)

Manjari Garg

2016-01-01

Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

MATERIALS REQUIREMENTS FOR THERMIONIC ENERGY CONVERSION

Energy Technology Data Exchange (ETDEWEB)

Allen, R. C.; Skeen, C. H.

1963-03-15

The fundamentals of the thermionic energy conversion and its potential applications are reviewed. Materials problems associated with thermionic emitters are considered in relation to the following: work function; emissivity; vaporization; thermal, mechanical, and electrical properties; chemical stability; permeation; and stability under nuclear radiation. Cesium purity and materials suitable for collectors, electrical leads, support structures, insulators, and seals are also discussed. Experimental work on problems involved is reviewed. It is concluded that significant developments have occurred recently in all areas of thermionic energy conversion. (40 references) (A.G.W.)

A NEW THERMIONIC RF ELECTRON GUN FOR SYNCHROTRON LIGHT SOURCES

Energy Technology Data Exchange (ETDEWEB)

Kutsaev, Sergey; Agustsson, R.; Hartzell, J; Murokh, A.; Nassiri, A.; Savin, E.; Smirnov, A.V.; Smirnov, A. Yu; Sun, Y.; Verma, A; Waldschmidt, Geoff; Zholents, A.

2017-06-02

A thermionic RF gun is a compact and efficient source of electrons used in many practical applications. RadiaBeam Systems and the Advanced Photon Source at Argonne National Laboratory collaborate in developing of a reliable and robust thermionic RF gun for synchrotron light sources which would offer substantial improvements over existing thermionic RF guns and allow stable operation with up to 1A of beam peak current at a 100 Hz pulse repetition rate and a 1.5 μs RF pulse length. In this paper, we discuss the electromagnetic and engineering design of the cavity and report the progress towards high power tests of the cathode assembly of the new gun.

Oscillating thermionic conversion for high-density space power

International Nuclear Information System (INIS)

Jacobson, D.L.; Morris, J.F.

1988-01-01

The compactness, maneuverability, and productive weight utilization of space nuclear reactors benefit from the use of thermionic converters at high temperature. Nuclear-thermionic-conversion power requirements are discussed, and the role of oscillations in thermionic energy conversion (TEC) history is examined. Proposed TEC oscillations are addressed, and the results of recent studies of TEC oscillations are reviewed. The possible use of high-frequency TEC oscillations to amplify low-frequency ones is considered. The accomplishments of various programs studying the use of high-temperature thermionic oscillators are examined. 16 references

High performance emitter for thermionic diode obtained by chemical vapor deposition

International Nuclear Information System (INIS)

Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

1973-01-01

Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

Comparative assessment of out-of-core nuclear thermionic power systems

International Nuclear Information System (INIS)

Estabrook, W.C.; Koenig, D.R.; Prickett, W.Z.

1975-01-01

The hardware selections available for fabrication of a nuclear electric propulsion stage for planetary exploration were explored. The investigation was centered around a heat-pipe-cooled, fast-spectrum nuclear reactor for an out-of-core power conversion system with sufficient detail for comparison with the in-core system studies completed previously. A survey of competing power conversion systems still indicated that the modular reliability of thermionic converters makes them the desirable choice to provide the 240-kWe end-of-life power for at least 20,000 full power hours. The electrical energy will be used to operate a number of mercury ion bombardment thrusters with a specific impulse in the range of about 4,000-5,000 seconds. (Author)

Isotopic Thermionic Generator

International Nuclear Information System (INIS)

Clemot, M.; Devin, B.; Durand, J.P.

1967-01-01

This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [fr

Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Science.gov (United States)

Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

2018-04-01

A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

High temperature cogeneration with thermionic burners

International Nuclear Information System (INIS)

Fitzpatrick, G.O.; Britt, E.J.; Dick, R.S.

1981-01-01

The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging

High temperature cogeneration with thermionic burners

Science.gov (United States)

Fitzpatrick, G. O.; Britt, E. J.; Dick, R. S.

The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging.

Powering laser diode systems

CERN Document Server

Trestman, Grigoriy A

2017-01-01

This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Thermionic detector with multiple layered ionization source

International Nuclear Information System (INIS)

Patterson, P. L.

1985-01-01

Method and apparatus for analyzing specific chemical substances in a gaseous environment comprises a thermionic source formed of multiple layers of ceramic material composition, an electrical current instrumentality for heating the thermionic source to operating temperatures in the range of 100 0 C. to 1000 0 C., an instrumentality for exposing the surface of the thermionic source to contact with the specific chemical substances for the purpose of forming gas phase ionization of the substances by a process of electrical charge emission from the surface, a collector electrode disposed adjacent to the thermiomic source, an instrumentality for biasing the thermionic source at an electrical potential which causes the gas phase ions to move toward the collector, and an instrumentality for measuring the ion current arriving at the collector. The thermionic source is constructed of a metallic heater element molded inside a sub-layer of hardened ceramic cement material impregnated with a metallic compound additive which is non-corrosive to the heater element during operation. The sub-layer is further covered by a surface-layer formed of hardened ceramic cement material impregnated with an alkali metal compound in a manner that eliminates corrosive contact of the alkali compounds with the heater element. The sub-layer further protects the heater element from contact with gas environments which may be corrosive. The specific ionization of different chemical substances is varied over a wide range by changing the composition and temperature of the thermionic source, and by changing the composition of the gas environment

Fracture-resistant ultralloys for space-power systems: nuclear-thermionic-conversion implications of W,27Re

International Nuclear Information System (INIS)

Moraga, N.O.; Jacobsen, D.L.; Morris, J.F.

1989-01-01

Rhenium (Re) added to tungsten (W) improves the creep strength, recrystallization resistance and ductility. W,27Re is a good workable ultra alloy for use in space nuclear reactor (SNR) systems and perhaps its most practical processing procedure is sintering. A promising SNR application for such ultralloys is very-high-temperature thermionic energy conversion. Therefore determinations of thermionic and thermal emissive characteristics for sintered W,27Re at temperatures near and above 2000 K in hard vacuum enable both scientific and pragmatic progress. Such research results comprise the data and interpretive presentations in this paper. These findings emphasize the fallacy of characterizing ultralloys similar to W,27Re with single-valued thermophysicochemical properties - such as the work function. They further stress the necessity for investigations of this type to determine and demonstrate effective prototypic ultralloy compositions and processing methods. (author)

New features of the MAX IV thermionic pre-injector

Energy Technology Data Exchange (ETDEWEB)

Andersson, J., E-mail: joel.andersson@maxiv.lu.se; Olsson, D., E-mail: david.olsson@maxiv.lu.se; Curbis, F.; Malmgren, L.; Werin, S.

2017-05-21

The MAX IV facility in Lund, Sweden consists of two storage rings for production of synchrotron radiation. The smaller 1.5 GeV ring is presently under construction, while the larger 3 GeV ring is being commissioned. Both rings will be operating with top-up injections from a full-energy injector. During injection, the electron beam is first delivered to the main injector from a thermionic pre-injector which consists of a thermionic RF gun, a chopper system, and an energy filter. In order to reduce losses of high-energy electrons along the injector and in the rings, the electron beam provided by the thermionic pre-injector should have the correct time structure and energy distribution. In this paper, the design of the MAX IV thermionic pre-injector with all its sub components is presented. The electron beam delivered by the pre-injector and its dependence on parameters such as optics, cathode temperature, and RF power are studied. Measurements are here compared with simulation results obtained by particle tracking and electromagnetic codes. The chopper system is described in detail, and different driving schemes that optimize the injection efficiency for the two storage rings are investigated. During operation, it was discovered that the structure of the beam delivered by the gun is affected by mode beating between the accelerating and a low-order mode. This mode beating is also studied in detail. Finally, initial measurements of the electron beam delivered to the 3 GeV ring during commissioning are presented.

Solar electron source and thermionic solar cell

Directory of Open Access Journals (Sweden)

Parham Yaghoobi

2012-12-01

Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

Monte Carlo modelling of Schottky diode for rectenna simulation

Science.gov (United States)

Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

2017-09-01

Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

Thermionic nuclear reactor with internal heat distribution and multiple duct cooling

Science.gov (United States)

Fisher, C.R.; Perry, L.W. Jr.

1975-11-01

A Thermionic Nuclear Reactor is described having multiple ribbon-like coolant ducts passing through the core, intertwined among the thermionic fuel elements to provide independent cooling paths. Heat pipes are disposed in the core between and adjacent to the thermionic fuel elements and the ribbon ducting, for the purpose of more uniformly distributing the heat of fission among the thermionic fuel elements and the ducts.

Low-temperature thermionics in space nuclear power systems with the safe-type fast reactor

International Nuclear Information System (INIS)

Zrodnikov, A.V.; Yarygin, V.I.; Lazarenko, G.E.; Zabudko, A.N.; Ovcharenko, M.K.; Pyshko, A.P.; Mironov, V.S.; Kuznetsov, R.V.

2007-01-01

The potentialities of the use of the low-temperature thermionic converters (TIC) with the emitter temperature ≤ 1500 K in the space nuclear power system (SNPS) with the SAFE-type (Safe Affordable Fission Engine) fast reactor proposed and developed by common efforts of American experts have been considered. The main directions of the 'SAFE-300-TEG' SNPS (300 kW(thermal)) design update by replacing the thermoelectric converters with the low-temperature high-performance thermionic converters (with the barrier index V B ≤ 1.9 eV and efficiency ≥ 10%) meant for a long-term operation (5 years at least) as the components of the SAFE-300-TIC SNPS for a Lunar base have been discussed. The concept of the SNPS with the SAFE-type fast reactor and low-temperature TICs with specific electric power of about 1.45 W/cm 2 as the components of the SAFE-300-TIC system meeting the Nasa's initial requirements to a Lunar base with the electric power demand of about 30 kW(electrical) for robotic mission has been considered. The results, involving optimization and mass-and-size estimation, show that the SAFE-300-TIC system meets the initial requirements by Nasa to the lunar base power supply. The main directions of the system update aimed at the output electric power increase up to 100 kW(electrical) have also been presented. (authors)

Thermionic and Photo-excited Electron Emission for Energy Conversion Processes

Directory of Open Access Journals (Sweden)

Patrick T. McCarthy

2014-12-01

Full Text Available This article describes advances in thermionic and photoemission materials and applications dating back to the work on thermionic emission by Guthrie in 1873 and the photoelectric effect by Hertz in 1887. Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photoemission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk and surface structure.

Thermionic and Photo-Excited Electron Emission for Energy-Conversion Processes

Energy Technology Data Exchange (ETDEWEB)

McCarthy, Patrick T. [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States); Reifenberger, Ronald G. [Birck Nanotechnology Center, School of Physics, Purdue University, West Lafayette, IN (United States); Fisher, Timothy S., E-mail: tsfisher@purdue.edu [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States)

2014-12-09

This article describes advances in thermionic and photo-emission materials and applications dating back to the work on thermionic emission by Guthrie (1873) and the photoelectric effect by Hertz (1893). Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron-emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photo-emission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk, and surface structure.

Thermionic cogeneration burner design

Science.gov (United States)

Miskolczy, G.; Goodale, D.; Moffat, A. L.; Morgan, D. T.

Since thermionic converters receive heat at very high temperatures (approximately 1800 K) and reject heat at moderately high temperatures (approximately 800 K), they are useful for cogeneration applications involving high temperature processes. The electric power from thermionic converters is produced as a high amperage, low-voltage direct current. An ideal cogeneration application would be to utilize the reject heat at the collector temperature and the electricity without power conditioning. A cogeneration application in the edible oil industry fulfills both of these requirements since both direct heat and hydrogen gas are required in the hydrogenation of the oils. In this application, the low-voltage direct current would be used in a hydrogen electrolyzer.

A new concept of thermionic converter

International Nuclear Information System (INIS)

Musa, G.

1978-10-01

The parameters of a new type of thermionic converter which has a number of concentric electrodes, is computed. The obtained theoretical efficiency of this new type of converter is nearly the efficiency of the ideal thermionic converter. The obtained results are explained by the reduction of the radiation loss from the emitter due to the electrode configuration. Efficiencies as high as 20% are expected from this type of converter now in construction. (author)

Thermionic phenomena the collected works of Irving Langmuir

CERN Document Server

Suits, C Guy

1961-01-01

Thermionic Phenomena is the third volume of the series entitled The Collected Works of Irving Langmuir. This volume compiles articles written during the 1920's and early 1930's, the period when the science of thermionics is beginning to be of importance. This text is divided into two parts. The first part discusses vacuum pumps, specifically examining the effect of space charge and residual gases on thermionic currents in high vacuum. This part also explains fundamental phenomena in electron tubes having tungsten cathodes and the use of high-power vacuum tubes. The second part of this text loo

HEAT Sensor: Harsh Environment Adaptable Thermionic Sensor

Energy Technology Data Exchange (ETDEWEB)

Limb, Scott J. [Palo Alto Research Center, Palo Alto, CA (United States)

2016-05-31

This document is the final report for the “HARSH ENVIRONMENT ADAPTABLE THERMIONIC SENSOR” project under NETL’s Crosscutting contract DE-FE0013062. This report addresses sensors that can be made with thermionic thin films along with the required high temperature hermetic packaging process. These sensors can be placed in harsh high temperature environments and potentially be wireless and self-powered.

Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

International Nuclear Information System (INIS)

Chand, Subhash; Bala, Saroj

2007-01-01

The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

Development of a high temperature solar receiver for high-efficient thermionic conversion systems; Fukugo netsuden henkan system yo chokoon taiyo junetsuki no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

Umeoka, T; Naito, H; Yugami, H; Arashi, H [Tohoku University, Sendai (Japan). Faculty of Engineering

1996-10-27

For thermionic conversion systems (TIC) using concentrated sunlight as heat source, the newly developed solar receiver was tested. Concentrated sunlight aims at the inner surface of the cavity type solar receiver. The emitter of TIC installed in the rear of the solar receiver is uniformly heated over 1700K by thermal radiation from the rear of the solar receiver, emitting thermion. Electric power is generated by collecting the thermion by collector. Mo is used as emitter material, however, because of poor heat absorption of Mo, high-absorptive TiC is used for heat absorption surface to heat Mo by thermal conduction from high-temperature TiC. Functionally gradient material (FGM) with an intermediate layer of gradient TiC/Mo ratios between TiC and Mo is used as emitter material. The emitter is thus uniformly heated at high temperatures of 1723{plus_minus}12K. As a result, the developed solar receiver is applicable to heat the emitter of TIC. Heat flux measurement at the graphite cavity clarified that cavity temperature of as high as 1780K and heat flow of 50W/cm{sup 2} are obtained at 4.7kW in input. 6 figs.

Gridded thermionic gun and integral superconducting ballistic bunch compression cavity

Energy Technology Data Exchange (ETDEWEB)

Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

2015-11-16

Electron-Ion colliders such as the Medium energy Electron Ion Collider (MEIC) being developed by JLAB require high current electrons with low energy spread for electron cooling of the collider ring. Accelerator techniques for improving bunch charge, average current, emittance, and energy spread are required for Energy Recovery Linacs (ERLs) and Circulator Rings (CR) for next generation colliders for nuclear physics experiments. Example candidates include thermionic-cathode electron guns with RF accelerating structures. Thermionic cathodes are known to produce high currents and have excellent lifetime. The success of the IR and THz Free-Electron Laser (FEL) designed and installed by Advanced Energy Systems at the Fritz Haber Institute (FHI) of the Max Planck Society in Berlin [1,2] demonstrates that gridded thermionic cathodes and rf systems be considered for next generation collider technology. In Phase 1 Advanced Energy Systems (AES) developed and analyzed a design concept using a superconducting cavity pair and gridded thermionic cathode. Analysis included Beam Dynamics and thermal analysis to show that a design of this type is feasible. The latest design goals for the MEIC electron cooler were for electron bunches of 420 pC at a frequency of 952.6 MHz with a magnetic field on the cathode of 2kG. This field magnetizes the beam imparting angular momentum that provides for helical motion of the electrons in the cooling solenoid. The helical motion increases the interaction time and improves the cooling efficiency. A coil positioned around the cathode providing 2kG field was developed. Beam dynamics simulations were run to develop the particle dynamics near the cathode and grid. Lloyd Young added capability to Tstep to include space charge effects between two plates and include image charge effects from the grid. He also added new pepper-pot geometry capability to account for honeycomb grids. These additions were used to develop the beam dynamics for this gun. The

A50-kW(el) solar energy thermionic power generator for spacecraft

International Nuclear Information System (INIS)

Sahin, S.

1978-01-01

The technical limits of thermionic reactors in space craft and the potentials of solar energy thermionic converters are discussed. The technical design of a solar energy thermionic generator for 50 kW(el) as a secondary energy source in unmanned space craft is presented. (GG) [de

The effect of samarium doping on structure and enhanced thermionic emission properties of lanthanum hexaboride fabricated by spark plasma sintering

Energy Technology Data Exchange (ETDEWEB)

Zhou, Shenlin; Hu, Qianglin [College of Mathematics and Physics, Jinggangshan University, Jian (China); Zhang, Jiuxing; Liu, Danmin [Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing (China); Huang, Qingzhen [NIST Center for Neutron Research, National Institute of Standards and Technology, MD (United States)

2014-03-15

Single-phase polycrystalline solid solutions (La{sub 1-x}Sm{sub x})B{sub 6} (x = 0, 0.2, 0.4, 0.8, 1) are fabricated by spark plasma sintering (SPS). This study demonstrates a systematic investigation of structure-property relationships in Sm-doped LaB{sub 6} ternary rare-earth hexaborides. The microstructure, crystallographic orientation, electrical resistivity, and thermionic emission performance of these compounds are investigated. Analysis of the results indicates that samarium (Sm) doping has a noticeable effect on the structure and performance of lanthanum hexaboride (LaB{sub 6}). The analytical investigation of the electron backscatter diffraction confirms that (La{sub 0.6}Sm{sub 0.4})B{sub 6} exhibits a clear (001) texture that results in a low work function. Work functions are determined by pulsed thermionic diode measurements at 1500-1873 K. The (La{sub 0.6}Sm{sub 0.4})B{sub 6} possesses improved thermionic emission properties compared to LaB{sub 6}. The current density of (La{sub 0.6}Sm{sub 0.4})B{sub 6} is 42.4 A cm{sup -2} at 1873 K, which is 17.5% larger than that of LaB{sub 6}. The values of Φ{sub R} for (La{sub 0.6}Sm{sub 0.4})B{sub 6} and LaB{sub 6} are 1.98 ± 0.03 and 1.67 ± 0.03 eV, respectively. Furthermore, the Sm substitution of lanthanum (La) effectively increases the electrical resistivity. These results reveal that Sm doping lead to significantly enhanced thermionic emission properties of LaB{sub 6}. The compound (La{sub 0.6}Sm{sub 0.4})B{sub 6} appears most promising as a future emitter material. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

SP-100 thermionic technology program annual integrated technical progress report for the period ending September 30, 1984

International Nuclear Information System (INIS)

Holland, J.W.

1984-11-01

The thermionic technology program addresses the feasibility issues of a seven-year-life thermionic fuel element (TFE) for the SP-100 Thermionic Reactor Space Power System. These issues relate to the extension of TFE lifetime from three to seven years, one of the SP-100 requirements. The technology to support three-year lifetimes was demonstrated in the earlier TFE development program conducted in the late-1960s and 1970s. Primary life-limiting factors were recognized to be thermionic emitter dimensional increases due to swelling of the nuclear fuel and electrical structural damage from fast neutrons. The 1984-85 technology program is investigating the fueled emitter and insulator lifetime issues, both experimentally and analytically. The goal is to analytically project the lifetime of the fueled emitter and insulator and to experimentally verify these projection methods. In 1984, the efforts were largely devoted to the design and building of fueled emitters for irradiation in 1985, validation of fuel-emitter models, development of irradiation-resistant metal-ceramic seal and sheath insulator, modeling of insulator lifetime, and development of wide-spread, high-performance thermionic converters

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

OpenAIRE

H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

2014-01-01

The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

Science.gov (United States)

Mamedov, R. K.; Aslanova, A. R.

2018-06-01

The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

Mechanism of explosive emission excitation in thermionic energy conversion processes

Energy Technology Data Exchange (ETDEWEB)

Bulyga, A.V.

1983-01-01

A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

Thermionic cogeneration burner assessment study. Third quarterly technical progress report, April-June, 1983

Energy Technology Data Exchange (ETDEWEB)

1983-01-01

The specific tasks of this study are to mathematically model the thermionic cogeneration burner, experimentally confirm the projected energy flows in a thermal mock-up, make a cost estimate of the burner, including manufacturing, installation and maintenance, review industries in general and determine what groups of industries would be able to use the electrical power generated in the process, select one or more industries out of those for an in-depth study, including determination of the performance required for a thermionic cogeneration system to be competitive in that industry. Progress is reported. (WHK)

Thermionic emission of cermets made of refractory carbides

International Nuclear Information System (INIS)

Samsonow, G.W.; Bogomol, I.W.; Ochremtschuk, L.N.; Podtschernjajewa, I.A.; Fomenko, W.S.

1975-01-01

In order to improve the resistance to thermal variations of refractory carbides having good behavior for thermionic emission, they have been combined with transition metals d. Thermionic emission was studied with cermets in compact samples. Following systems were examined: TiC-Nb, TiC-Mo, TiC-W, ZrC-Nb, ZrC-Mo, ZrC-W, WC-Mo with compositions of: 75% M 1 C-25% M 2 , 50%M 1 C-50%M 2 , 25%M 1 C-75%M 2 . When following the variation of electron emission energy phi versus the composition, it appears that in the range of mixed crystals (M 1 M 2 )C, phi decreases and the resistance to thermal variations of these phases is higher than that of individual carbides. The study of obtained cermets shows that their resistance to thermal variations is largely superior to the one of starting carbides; TiC and ZrC carbides, combined with molybdenum and tungsten support the highest number of thermic cycles

Advantages and implications of U233 fueled thermionic space power energy conversion

International Nuclear Information System (INIS)

Terrell, C.W.

1992-01-01

In this paper two recent analyses are reported which demonstrate advantages of a U233 fueled thermionic fuel element (TFE) compared to 93 w/o U235, and that application (mission) has broad latitude in how space power reactor systems could or should be optimized. A reference thermionic reactor system was selected to provide the basis for the fuel comparisons. Both oxide and metal fuel forms were compared. Of special interest was to estimate the efficiencies of the four fuel forms to produce electrical power. A figure of merit (FOM) was defined which is directly proportional to the electrical average electrical power produced is proportional to the electrical power produced per unit uranium mass. In a TFE the average electrical power produced is proportional to the emitter surface area (Esa), hence the ratio Esa/Mu was selected as the FOM. Results indicate that the choice of fuel type and form leads to wide variations in critical and system masses FOM values, and system total power

Thermodynamics of photon-enhanced thermionic emission solar cells

International Nuclear Information System (INIS)

Reck, Kasper; Hansen, Ole

2014-01-01

Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE solar cells including an analysis of the entropy production due to thermionic emission of general validity. The model is applied to find the maximum efficiency of a PETE cell for given cathode and anode work functions and temperatures

Graphite based Schottky diodes formed semiconducting substrates

Science.gov (United States)

Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

2010-03-01

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

The mechanism of explosive emission excitation in thermionic energy conversion processes

Science.gov (United States)

Bulyga, A. V.

A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

Directory of Open Access Journals (Sweden)

H. MAZARI

2014-05-01

Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

Materials for thermionic energy converters

NARCIS (Netherlands)

Wolff, L.R.; Hermans, J.M.; Adriaansen, J.K.M.; Gubbels, G.H.M.; Vincenzini, P.

1987-01-01

This paper deals with the design and construction of a combustion heated Thermionic Energy Converter (TEC). Main components of this TEC are: 1. A ''Hot Shell'' protecting the TEC from the combustion environment 2. A ''Ceramic Seal'' electrically insulating the emitter from the collector 3. A

Thermionic refrigeration at CNT-CNT junctions

Science.gov (United States)

Li, C.; Pipe, K. P.

2016-10-01

Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

Thermionics. A bibliography with abstracts. Search period covered: 1970--Apr 1975. [190 references

Energy Technology Data Exchange (ETDEWEB)

Grooms, D.W.

1975-04-01

Research on thermionic power generation, power plant design, converter design, and basic research on thermionic materials are cited in the bibliography. Spacecraft applications are included. (Contains 190 abstracts).

The classical Pierce diode: Using particle simulations on linear and nonlinear behavior and final states

International Nuclear Information System (INIS)

Crystal, T.L.; Kuhn, S.; Birdsall, C.K.

1984-01-01

The classical Pierce diode is a simple 1-d system of two shorted metal plates, a cold beam of electrons injected from one side and a neutralizing background of rigid ions. While the plasma medium is technically stable, the finiteness of the Pierce system allows stable and unstable operation. It is usefully studied as an archetypical bounded plasma system, related e.g., to Q-machines, particle accelerators, thermionic converters. New particle simulations of the Pierce diode have successfully recovered many novel linear phenomena including the dominant linear eigenmodes (seen in the internal electrostatic fields), and the dominant and subdominant eigenfrequencies, (seen both in the internal electrostatics and in the external circuit current, J/sub ext/(t)). These simulation results conform very well to detailed predictions of a new linear analysis. The final (nonlinear) state recovered can show critical dependence on initial (linear perturbation) conditions, and can be made steady-state (d.c.) or periodic-oscillatory by simply changing the initial conditions by a factor of 10/sup -4/ or less. A third class of final state is also possible which has oscillations which seem to be nonperiodic

Hybrid thermionic-photovoltaic converter

Energy Technology Data Exchange (ETDEWEB)

Datas, A. [Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid (Spain)

2016-04-04

A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligible electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.

100 years of the physics of diodes

Science.gov (United States)

Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

2017-03-01

The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

Photocathode operation of a thermionic RF gun

International Nuclear Information System (INIS)

Thorin, S.; Cutic, N.; Lindau, F.; Werin, S.; Curbis, F.

2009-01-01

The thermionic RF gun using a BaO cathode at the MAX-lab linac injector has been successfully commissioned for additional operation as a photocathode gun. By retaining the BaO cathode, lowering the temperature below thermal emission and illuminating it with a UV (263 nm) 9 ps laser pulse a reduced emittance and enhanced emission control has been achieved. Measurements show a normalised emittance of 5.5 mm mrad at 200 pC charge and a maximum quantum efficiency of 1.1x10 -4 . The gun is now routinely switched between storage ring injections in thermionic mode and providing a beam for the MAX-lab test FEL in photocathode mode.

Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

Directory of Open Access Journals (Sweden)

Moonsang Lee

2018-06-01

Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

Wavelength stabilized multi-kW diode laser systems

Science.gov (United States)

Köhler, Bernd; Unger, Andreas; Kindervater, Tobias; Drovs, Simon; Wolf, Paul; Hubrich, Ralf; Beczkowiak, Anna; Auch, Stefan; Müntz, Holger; Biesenbach, Jens

2015-03-01

We report on wavelength stabilized high-power diode laser systems with enhanced spectral brightness by means of Volume Holographic Gratings. High-power diode laser modules typically have a relatively broad spectral width of about 3 to 6 nm. In addition the center wavelength shifts by changing the temperature and the driving current, which is obstructive for pumping applications with small absorption bandwidths. Wavelength stabilization of high-power diode laser systems is an important method to increase the efficiency of diode pumped solid-state lasers. It also enables power scaling by dense wavelength multiplexing. To ensure a wide locking range and efficient wavelength stabilization the parameters of the Volume Holographic Grating and the parameters of the diode laser bar have to be adapted carefully. Important parameters are the reflectivity of the Volume Holographic Grating, the reflectivity of the diode laser bar as well as its angular and spectral emission characteristics. In this paper we present detailed data on wavelength stabilized diode laser systems with and without fiber coupling in the spectral range from 634 nm up to 1533 nm. The maximum output power of 2.7 kW was measured for a fiber coupled system (1000 μm, NA 0.22), which was stabilized at a wavelength of 969 nm with a spectral width of only 0.6 nm (90% value). Another example is a narrow line-width diode laser stack, which was stabilized at a wavelength of 1533 nm with a spectral bandwidth below 1 nm and an output power of 835 W.

The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

Energy Technology Data Exchange (ETDEWEB)

Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

2011-03-30

Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

Science.gov (United States)

Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

2017-07-01

Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

International Nuclear Information System (INIS)

Guo-Ping, Ru; Rong, Yu; Yu-Long, Jiang; Gang, Ruan

2010-01-01

This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V-T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V j , excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V j needs to be smaller than the barrier height ø. With proper scheme of series resistance connection where the condition of V j > ø is guaranteed, I-V-T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I-V-T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I-V-T curves only for small barrier height inhomogeneity. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

Work function and surface stability of tungsten-based thermionic electron emission cathodes

Science.gov (United States)

Jacobs, Ryan; Morgan, Dane; Booske, John

2017-11-01

Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

Thermionic integrated circuits: electronics for hostile environments

International Nuclear Information System (INIS)

Lynn, D.K.; McCormick, J.B.; MacRoberts, M.D.J.; Wilde, D.K.; Dooley, G.R.; Brown, D.R.

1985-01-01

Thermionic integrated circuits combine vacuum tube technology with integrated circuit techniques to form integrated vacuum triode circuits. These circuits are capable of extended operation in both high-temperature and high-radiation environments

NASA thermionic-conversion program

International Nuclear Information System (INIS)

Morris, J.F.

1977-01-01

NASA's program for applied research and technology (ART) in thermionic energy conversion (TEC) has made worthwhile contributions in a relatively short time: Many of these accomplishments are incremental, yet important. And their integration has yielded gains in performance as well as in the knowledge necessary to point productive directions for future work. Both promise and problems derive from the degrees of freedom allowed by the current programmatic emphasis on out-of-core thermionics. Materials and designs previously prohibited by in-core nucleonics and geometries now offer new potentialities. But as a result a major TEC-ART responsibility is the efficient reduction of the glitter of diverse possibilities to the hard glint of reality. As always high-temperature material effects are crucial to the level and duration of TEC performance: New electrodes must increase and maintain power output regardless of emitter-vapor deposition on collectors. They must also serve compatibly with hot-shell alloys. And while space TEC must face high-temperature vaporization problems externally as well as internally, terrestrial TEC must tolerate hot corrosive atmospheres outside and near-vacuum inside. Furthermore, some modes for decreasing interelectrode losses appear to require rather demanding converter geometries to produce practical power densities. In these areas and others significant progress is being made in the NASA TEC-ART Program

High-power green diode laser systems for biomedical applications

DEFF Research Database (Denmark)

Müller, André

propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

Small ex-core heat pipe thermionic reactor concept (SEHPTR)

International Nuclear Information System (INIS)

Jacox, M.G.; Bennett, R.G.; Lundberg, L.B.; Miller, B.G.; Drexler, R.L.

1991-01-01

The Idaho National Engineering Laboratory (INEL) has developed an innovative space nuclear power concept with unique features and significant advantages for both Defense and Civilian space missions. The Small Ex-core Heat Pipe Thermionic Reactor (SEHPTR) concept was developed in response to Air Force needs for space nuclear power in the range of 10 to 40 kilowatts. This paper describes the SEHPTR concept and discusses the key technical issues and advantages of such a system

Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

Science.gov (United States)

Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

2011-01-01

A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

Dexter - A one-dimensional code for calculating thermionic performance of long converters.

Science.gov (United States)

Sawyer, C. D.

1971-01-01

This paper describes a versatile code for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are given.

High power cascade diode lasers emitting near 2 μm

Energy Technology Data Exchange (ETDEWEB)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

Directory of Open Access Journals (Sweden)

A. Pitanti

2011-08-01

Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

InGaAs-based planar barrier diode as microwave rectifier

Science.gov (United States)

Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

2018-06-01

In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory.

Science.gov (United States)

Lee, Hong-Sub; Park, Hyung-Ho

2016-06-22

Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

John Ambrose Fleming and the Beginning of Electronics

Energy Technology Data Exchange (ETDEWEB)

Fred Dylla; Steve Corneliussen

2004-11-01

2004 was the centenary of John Ambrose Fleming's momentous patent on the thermionic diode that can be called the birth of electronics. The ''Edison effect'' was discovered in 1882; this was later shown to be the result of thermionic emission of electrons from a heated filament into a vacuum. Edison did not make any significant devices based on this discovery, and the effect was ignored for more than 8 years. In 1890 Fleming explained the effect and showed that the thermionic diode could be used as a rectifier. Fourteen years later Fleming filed his 1904 patent on the thermionic diode. It was the first public announcement of the electron tube; this revolutionized the development of radio and led to the invention of the thermionic triode by Lee de Forest in 1906. The background to these events will be described.

DEXTER: A one-dimensional code for calculating thermionic performance of long converters

Science.gov (United States)

Sawyer, C. D.

1971-01-01

A versatile code is described for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are included along with a user's manual.

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Jin, Jidong [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Du, Lulu; Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); School of Physics, Shandong University, Jinan 250100 (China)

2015-08-31

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

A high-brightness thermionic microwave electron gun

Energy Technology Data Exchange (ETDEWEB)

Borland, Michael [Stanford Univ., CA (United States)

1991-02-01

In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun`s performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ``State-of-the-art`` microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of < 10 π • m_ec • μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 10⁹e^- per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically < 30 π • m_e • μm.

A high-brightness thermionic microwave electron gun

International Nuclear Information System (INIS)

Borland, M.

1991-02-01

In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun's performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ''State-of-the-art'' microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of e c · μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 10 9 e - per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically e · μm

Evidence for cluster shape effects on the kinetic energy spectrum in thermionic emission.

Science.gov (United States)

Calvo, F; Lépine, F; Baguenard, B; Pagliarulo, F; Concina, B; Bordas, C; Parneix, P

2007-11-28

Experimental kinetic energy release distributions obtained for the thermionic emission from C(n) (-) clusters, 10theory, these different features are analyzed and interpreted as the consequence of contrasting shapes in the daughter clusters; linear and nonlinear isomers have clearly distinct signatures. These results provide a novel indirect structural probe for atomic clusters associated with their thermionic emission spectra.

Method and system for homogenizing diode laser pump arrays

Science.gov (United States)

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

Charge injection and transport properties of an organic light-emitting diode

Directory of Open Access Journals (Sweden)

Peter Juhasz

2016-01-01

Full Text Available The charge behavior of organic light emitting diode (OLED is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport.

Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

Science.gov (United States)

Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

2015-05-21

Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

On thermionic emission from plasma-facing components in tokamak-relevant conditions.

Czech Academy of Sciences Publication Activity Database

Komm, Michael; Ratynskaia, S.; Tolias, P.; Cavalier, Jordan; Dejarnac, Renaud; Gunn, J. P.; Podolník, Aleš

2017-01-01

Roč. 59, č. 9 (2017), č. článku 094002. ISSN 0741-3335 R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : thermionic * PIC * tungsten * tokamak * thermionic emission * plasma facing components * particle-in-cell Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.392, year: 2016 http://iopscience.iop.org/article/10.1088/1361-6587/aa78c4/pdf

A PVTC system integrating photon-enhanced thermionic emission and methane reforming for efficient solar power generation

Institute of Scientific and Technical Information of China (English)

Wenjia Li; Hongsheng Wang; Yong Hao

2017-01-01

A new photovoltaic-thermochemical (PVTC) conceptual system integrating photon-enhanced thermionic emission (PETE) and methane steam reforming is proposed.Major novelty of the system lies in its potential adaptivity to primary fuels (e.g.methane) and high efficiencies of photovoltaic and thermochemical power generation,both of which result from its operation at much elevated temperatures (700-1000 ℃)compared with conventional photovoltaic-thermal (PVT) systems.Analysis shows that an overall power generation efficiency of 45.3％ and a net solar-to-electric efficiency of 39.1％ could be reached at an operating temperature of 750 ℃,after considering major losses during solar energy capture and conversion processes.The system is also featured by high solar share (37％) in the total power output,as well as high energy storage capability and very low CO2 emissions,both enabled by the integration of methane reforming with photovoltaic generation at high temperatures.

Isotopic Thermionic Generator; Generateur thermoionique isotopique

Energy Technology Data Exchange (ETDEWEB)

Clemot, M; Devin, B; Durand, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1967-07-01

This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [French] Ce rapport decrit la structure d'un generateur spatial d'electricite a conversion directe du type thermoionique. La source d'energie est un radioisotope. Deux isotopes sont envisages: le Pu 238 et le Cm 244. Le systeme comporte pour l'emetteur un caloduc concentreur de flux thermique et pour le collecteur, un caloduc evacuateur vers l'enveloppe du generateur utilise, en panneau rayonnant. Les calculs ont ete conduits dans le cas particulier d'une puissance convertie de 100 watts electriques. (auteurs)

Thermionic energy conversion heat - electric power; Termojonisk energiomvandling vaerme-elektrisk energi

Energy Technology Data Exchange (ETDEWEB)

Holmlid, L; Svensson, R [Gothenburg Univ. and Chalmers Univ. of Technology (Sweden)

1993-09-15

Research and development related to Thermionic Energy Converters (TEC) in Holland and Sweden is directed towards terrestrial applications, while the development work in Russia and the US primarily is directed towards thermionic nuclear reactor for use in space. We have during the project continued our work on the utilization of the so called Rydberg matter in converters. Our patented construction has very good (low) values of the barrier index (figure of merit for the converter), probably the lowest ones ever measured. International patents have been applied for as well. We can summarize the achievements of the project such that solutions to practically all the problems related to the inner function of thermionic converters have been found. During this year a large number of studies have been carried out concerning the properties of the Rydberg matter in the TEC, and related to the highly excited states of Cs which exist in the TEC, partially in cooperation with an American research company. An international conference within the TEC field has been arranged in Gothenburg. Two Ph.D. theses are also under completion within the project

Thermionic combustor application to combined gas and steam turbine power plants

Science.gov (United States)

Miskolczy, G.; Wang, C. C.; Lieb, D. P.; Margulies, A. E.; Fusegni, L. J.; Lovell, B. J.

A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air; the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh.

Thermionic combustor application to combined gas and steam turbine power plants

International Nuclear Information System (INIS)

Miskolczy, G.; Wang, C.C.; Lieb, D.P.

1981-01-01

A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air, the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh

Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

International Nuclear Information System (INIS)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-01-01

We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

Science.gov (United States)

Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

2015-12-01

We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

Monolayer WS{sub 2} crossed with an electro-spun PEDOT-PSS nano-ribbon: Fabricating a Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Ortiz, Deliris N.; Vedrine, Josee [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Naylor, Carl H.; Charlie Johnson, A.T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States)

2016-12-15

Highlights: • First report on a Schottky diode formed from monolayer WS{sub 2} and PEDOT-PSSA nano-ribbon. • Straightforward and unique fabrication technique. • Diode operation is stable in air. - Abstract: WS{sub 2} and PEDOT-PSS were individually characterized with the goal of analyzing charge transport across a hetero-junction formed by these two materials. In thermal equilibrium electron flow from the WS{sub 2} conduction band into the polymer LUMO level leads to band bending that creates a potential barrier preventing further current. The measured current-voltage (I{sub DS}-V{sub DS}) curve across the hetero-junction was non-linear and asymmetric similar to a diode, with a turn-on voltage of 1.4 V and a rectification ratio of 12. The device I–V data were analyzed using the standard thermionic emission model of a Schottky junction and yielded an ideality parameter of 1.9 and a barrier height of 0.58 eV. This facile technique is the first report on a nano-diode fabricated using WS{sub 2} and PEDOT-PSS, opening up the possibility of extending this work to include other layered transition metal dichalcogenides and conducting polymers.

Prospects for the use of thermionic nuclear power plants for interorbital transfers of space vehicles in near space

International Nuclear Information System (INIS)

Andreev, P.V.; Zhabotinskii, E.E.; Nikonov, A.M.

1993-01-01

In a previous study the authors considered the use of thermionic nuclear power plants with a thermal reactor for interorbital transfers of space vehicles by electrojet propulsion systems (EJPSs), opening up broad prospects for putting payloads into a high orbit with relatively inexpensive means for a launch into a reference orbit, e.g., the Proton launch vehicle. This is of major importance for the commercial use of space technology, in particular, for erecting technological platforms for the production of various materials. In the work reported here the authors continue the study of interorbital transfers and explore the potentialities of thermionic NPPs with a thermal reactor and with a fast reactor. In boosted operation the electrical power of the latter may reach several hundred kilowatts. What type of NPP is desirable for testing an electrojet propulsion system in interorbital transfers from a reference orbit to a high orbit, providing that the time is limited, depends on the class of the launch vehicle characterized by the mass M o that the vehicle can carry into the reference orbit, where radiation safety conditions allow the NPP to be started up. Results of studies are presented that give an idea of the rational choice of type of thermionic NPP for the organization in interorbital transfers

Cesium-plasma-conductivity enhancement in the advanced thermionic energy converter. Final report

International Nuclear Information System (INIS)

Manikopoulos, C.N.

Two methods of plasma conductivity enhancement in a cesium vapor thermionic energy converter have been studied. The first involved resonance photoabsorption of several cesium lines and the second utilized cesium plasma sustenance by application of microwave power. An extensive study of ionization processes in a cesium discharge in the presence of resonance ionization was made. Calculations were made of expected percentage excitation levels for several cesium resonance transitions for different values of neutral density and temperature as well as incident radiation power levels. The results of some of these computations were tabulated. Several ionization schemes were considered. A number of cesium transitions were investigated in the range of 799 to 870 nanometers for four different cesium reservoir temperatures, 467, 511, 550 and 591 K. The related absorption coefficients of the radiation lines in the plasma were deduced and tabulated. The resulting plasma conductivity increase was recorded and the associated ionization enhancement was deduced. A microwave cavity was built where the emitter and collector of a simple thermionic converter made up two of the cavity walls and resonant microwave power was externally applied. The I-V characteristics of the thermionic converter were studied under several microwave power levels in the range of 0 to 2 watts. Significant shifts to higher currents were observed as the microwave power levels were raised. In conclusion, both methods show promise as auxiliary ionization mechanisms for the thermionic energy converter, especially at low emitter temperatures

Thermodynamics of photon-enhanced thermionic emission solar cells

DEFF Research Database (Denmark)

Reck, Kasper; Hansen, Ole

2014-01-01

Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE...

Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

Science.gov (United States)

Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

1999-01-01

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

Directory of Open Access Journals (Sweden)

Hassan Maktuff Jaber Al-Ta'ii

2015-05-01

Full Text Available Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

Directory of Open Access Journals (Sweden)

Franz A. M. Koeck

2017-12-01

Full Text Available Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range. These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission. In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Energy Technology Data Exchange (ETDEWEB)

Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

Science.gov (United States)

Erdoğan, Erman; Kundakçı, Mutlu

2017-02-01

Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Science.gov (United States)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Photon enhanced thermionic emission

Science.gov (United States)

Schwede, Jared; Melosh, Nicholas; Shen, Zhixun

2014-10-07

Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200.degree. C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.

Blue laser diode (450 nm) systems for welding copper

Science.gov (United States)

Silva Sa, M.; Finuf, M.; Fritz, R.; Tucker, J.; Pelaprat, J.-M.; Zediker, M. S.

2018-02-01

This paper will discuss the development of high power blue laser systems for industrial applications. The key development enabling high power blue laser systems is the emergence of high power, high brightness laser diodes at 450 nm. These devices have a high individual brightness rivaling their IR counterparts and they have the potential to exceed their performance and price barriers. They also have a very high To resulting in a 0.04 nm/°C wavelength shift. They have a very stable lateral far-field profile which can be combined with other diodes to achieve a superior brightness. This paper will report on the characteristics of the blue laser diodes, their integration into a modular laser system suitable for scaling the output power to the 1 kW level and beyond. Test results will be presented for welding of copper with power levels ranging from 150 Watts to 600 Watts

Design and operation of a thermionic converter in air

International Nuclear Information System (INIS)

Horner, M.H.; Begg, L.L.; Smith, J.N. Jr.; Geller, C.B.; Kallnowski, J.E.

1995-01-01

An electrically heated thermionic converter has been designed, built and successfully tested in air. Several unique features were incorporated in this converter: an integral cesium reservoir, innovative ceramic-to-metal seals, a heat rejection system coupling the collector to a low temperature heat sink and an innovative cylindrical heater filament. The converter was operated for extended periods of time with the emitter at about 1900 K. the collector at about 700 K, and a power density of over 2 w(e)/sq. cm. Input power transients were run between 50% and 100% thermal power, at up to 1% per second, without instabilities in performance

X-Band Thermionic Cathode RF Gun at UTNL

CERN Document Server

Fukasawa, Atsushi; Dobashi, Katsuhiro; Ebina, Futaro; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Matsuo, Kennichi; Ogino, Haruyuki; Sakae, Hisaharu; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji

2005-01-01

The X-band (11.424 GHz) linac for compact Compton scattering hard X-ray source are under construction at Nuclear Engineering Research Laboratory, University of Tokyo. This linac designed to accelerate up to 35 MeV, and this electron beam will be used to produce hard X-ray by colliding with laser. It consists of a thermionic cathode RF gun, an alpha magnet, and a traveling wave tube. The gun has 3.5 cells (unloaded Q is 8250) and will be operated at pi-mode. A dispenser cathode is introduced. Since the energy spread of the beam from the gun is predicted to be broad due to the continuous emission from the thermionic cathode, a slit is placed in the alpha magnet to eliminate low energy electrons. The simulation on the injector shows the beam energy 2.9 MeV, the charge 23 pC/bunch, and the emittance less than 10 mm.mrad. The experiment on the gun is planed in the beginning of 2005, and the details will be discussed on the spot.

Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

2012-06-25

Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

International Nuclear Information System (INIS)

Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

2009-01-01

In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

International Nuclear Information System (INIS)

Rodríguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martín, Francisco; Schrebler, Ricardo; Ramos-Barrado, José R.; Dalchiele, Enrique A.

2012-01-01

n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

Processes of preparation, deposition and analysis of thermionic emissive substances

International Nuclear Information System (INIS)

Romao, B.M. Verdelli; Muraro Junior, A.; Tessaroto, L.A.B.; Takahashi, J.

1992-09-01

This paper shows the results of the optimization of the process of preparation and deposition of thermionic emissive substances that are used in the oxide-cathodes which are utilized in the gun of the IEAv linear electron accelerator. (author). 5 refs., 5 figs

Non-equilibrium thermionic electron emission for metals at high temperatures

Science.gov (United States)

Domenech-Garret, J. L.; Tierno, S. P.; Conde, L.

2015-08-01

Stationary thermionic electron emission currents from heated metals are compared against an analytical expression derived using a non-equilibrium quantum kappa energy distribution for the electrons. The latter depends on the temperature decreasing parameter κ ( T ) , which decreases with increasing temperature and can be estimated from raw experimental data and characterizes the departure of the electron energy spectrum from equilibrium Fermi-Dirac statistics. The calculations accurately predict the measured thermionic emission currents for both high and moderate temperature ranges. The Richardson-Dushman law governs electron emission for large values of kappa or equivalently, moderate metal temperatures. The high energy tail in the electron energy distribution function that develops at higher temperatures or lower kappa values increases the emission currents well over the predictions of the classical expression. This also permits the quantitative estimation of the departure of the metal electrons from the equilibrium Fermi-Dirac statistics.

K+ ion source for the heavy ion Induction Linac System Experiment ILSE

International Nuclear Information System (INIS)

Eylon, S.; Henestroza, E.; Chupp, W.W.; Yu, S.

1993-05-01

Low emittance singly charged potassium thermionic ion sources are being developed for the ILSE injector. The ILSE, now under study at LBL, will address the physics issues of particle beams in a heavy ion fusion driver scenario. The K + ion beam is emitted thermionically into a diode gap from alumina-silicate layers (zeolite) coated uniformly on a porous tungsten cup. The Injector diode design requires a large diameter (4in. to 7in.) source able to deliver high current (∼800 mA) low emittance (E n < .5 π mm-mr) beam. The SBTE (Single Beam Test Experiment) 120 keV gun was redesigned and modified with the aid of diode optics calculations using the EGUN code to enable the extraction of high currents of about 90 mA out of a one-inch diameter source. We report on the 1in. source fabrication technique and performance, including total current and current density profile measurements using Faraday cups, emittance and phase space profile measurements using the double slit scanning technique, and life time measurements. Furthermore, we shall report on the extension of the fabricating technique to large diameter sources (up to 7in.), measured ion emission performance, measured surface temperature uniform heating power considerations for large sources

K+ ion source for the heavy ion induction linac system experiment ILSE

International Nuclear Information System (INIS)

Eylon, S.; Henestroza, E.; Chupp, W.W.; Yu, S.

1993-01-01

Low emittance singly charged potassium thermionic ion sources are being developed for the ILSE injector. The ILSE, now under study at LBL, will address the physics issues of particle beams in a heavy ion fusion driver scenario. The K + ion beam is emitted thermionically into a diode gap from alumino-silicate layers (zeolite) coated uniformly on a porous tungsten cup. The Injector diode design requires a large diameter (4 inches to 7 inches) source able to deliver high current (∼ 800 mA) low emittance (E n < .5 π mm-mr) beam. The SBTE (Single Beam Test Experiment) 120 keV gun was redesigned and modified with the aid of diode optics calculations using the EGUN code to enable the extraction of high currents of about 90 mA out of a one-inch diameter source. The authors report on the 1 inch source fabrication technique and performance, including total current and current density profile measurements using Faraday cups, emittance and phase space profile measurements using the double slit scanning technique, and life time measurements. Furthermore, they shall report on the extension of the fabricating technique to large diameter sources (up to 7 inches), measured ion emission performance, measured surface temperature uniformity and heating power considerations for large sources

A new design of pulsed laser diode driver system for multistate quantum key distribution

Science.gov (United States)

Abdullah, M. S.; Jamaludin, M. Z.; Witjaksono, G.; Mokhtar, M. H. H.

2011-07-01

In this paper, we describe a new design of laser diode driver system based on MOSFET current mirror and digital signal controller (DSC). The system is designed to emit stream pairs of photons from three semiconductor laser diodes. The DSC is able to switch between the three laser diodes at constant rate. The duty cycle is maintained at 1% in order to reduce its thermal effect and thus prolong the laser diodes' life cycles. The MOSFET current mirror circuits are capable of delivering constant modulation current with peak current up to 58 mA to each laser diode. This laser driver system will allow the generating biphotons automatically with qubit rate around 8-13% for μ less than or equal to 1, thus making it practical for six-states quantum key distribution implementation.

Thermionic reactor power conditioner design for nuclear electric propulsion.

Science.gov (United States)

Jacobsen, A. S.; Tasca, D. M.

1971-01-01

Consideration of the effects of various thermionic reactor parameters and requirements upon spacecraft power conditioning design. A basic spacecraft is defined using nuclear electric propulsion, requiring approximately 120 kWe. The interrelationships of reactor operating characteristics and power conditioning requirements are discussed and evaluated, and the effects on power conditioner design and performance are presented.

Diode-laser-illuminated automotive lamp systems

Science.gov (United States)

Marinelli, Michael A.; Remillard, Jeffrey T.

1998-05-01

We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

Energy Technology Data Exchange (ETDEWEB)

Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

2010-08-15

In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

System and method for high power diode based additive manufacturing

Science.gov (United States)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2016-04-12

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

System and method for high power diode based additive manufacturing

Energy Technology Data Exchange (ETDEWEB)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2018-01-02

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

The design of a 3 GHz thermionic RF-gun and energy filter for MAX-lab

CERN Document Server

Anderberg, B; Demirkan, M; Eriksson, M; Malmgren, L; Werin, S

2002-01-01

A new pre-injector has been designed for the MAX-laboratory. It consists of an RF-gun and a magnetic energy filter. The newly designed RF-gun geometry will be operated at 3 GHz in the thermionic mode using a BaO cathode. The pre-injector will provide a 2.3 MeV electron beam in 3 ps micro pulses to a new injector system currently under construction.

In Vivo Diode Dosimetry for Imrt Treatments Generated by Pinnacle Treatment Planning System

International Nuclear Information System (INIS)

Alaei, Parham; Higgins, Patrick D.; Gerbi, Bruce J.

2009-01-01

Dose verification using diodes has been proposed and used for intensity modulated radiation therapy (IMRT) treatments. We have previously evaluated diode response for IMRT deliveries planned with the Eclipse/Helios treatment planning system. The Pinnacle treatment planning system generates plans that are delivered in a different fashion than Eclipse. Whereas the Eclipse-generated segments are delivered in organized progression from one side of each field to the other, Pinnacle-generated segments are delivered in a much more randomized fashion to different areas within the field. This makes diode measurements at a point more challenging because the diode may be exposed fully or partially to multiple small segments during one single field's treatment as opposed to being exposed to very few segments scanning across the diode during an Eclipse-generated delivery. We have evaluated in vivo dosimetry for Pinnacle-generated IMRT plans and characterized the response of the diode to various size segments on phantom. We present results of patient measurements on approximately 300 fields, which show that 76% of measurements agree to within 10% of the treatment-plan generated calculated doses. Of the other 24%, about 11% are within 15% of the calculated dose. Comparison of these with phantom measurements indicates that many of the discrepancies are due to diode positioning on patients and increased diode response at short source-to-surface distances (SSDs), with the remainder attributable to other factors such as segment size and partial irradiation of the diode

Contributions to the study of positive ion kinetics in gases

International Nuclear Information System (INIS)

Popescu, A.

1978-01-01

Extensive studies on cesium ion kinetics in cesium and cesium-noble gas mixtures were performed. The obtained data are correlated with the measured parameters of the thermionic diodes. The mobility of atomic and molecular cesium ions at low electric fields, including zero electric field, in cesium and cesium krypton mixtures were measured using the time of flight method and a special thermionic ion detector. The atomic ion conversion into molecular ions is theoretically considered in the diffusion equation of the charged particles and the obtained analytical relation is in good agreement with the experimental cesium measured data. The reaction rate of the ion conversion in cesium is considered from these measurements. Measurements on the diffused plasma through the anode (provided with holes) of the cesium thermionic diode supply data on the anode sheath, the ratio of electronic and ionic current, electron temperature and the nature of the cesium ions (atomic or molecular) for various modes of the low voltage arc discharge. The obtained data have been used for the optimization of the thermionic diode parameters, as well as for the development of a new type of device for the detection of impurities in the air. (author)

Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique

International Nuclear Information System (INIS)

Keskenler, E.F.; Tomakin, M.; Doğan, S.; Turgut, G.; Aydın, S.; Duman, S.; Gürbulak, B.

2013-01-01

Highlights: ► Ag/n-ZnO/p-Si/Al heterojunction diode was grown via sol–gel technique. ► The characterization of ZnO material was investigated. ► The heterojunction structure showed a rectification behavior. ► Ideality factor and barrier height were found to be 2.03 and 0.71 eV, respectively. - Abstract: Polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol–gel method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (0 0 2) preferred direction. Scanning electron microscope image of ZnO showed that the obtained ZnO thin films had more porous character. High purity vacuum evaporated silver (Ag) and aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Ag/n-ZnO/p-Si/Al diode were investigated by using current–voltage measurements. Ag/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found to be 2.03 and 0.71 eV by applying a thermionic emission theory, respectively. The values of series resistance from dV/d (ln I) versus I and H(I) versus I curves were found to be 42.1 and 198.3 Ω, respectively.

3-D simulation study for a thermionic RF gun using an FDTD method

Energy Technology Data Exchange (ETDEWEB)

Hama, H. E-mail: hama@lns.tohoku.ac.jp; Hinode, F.; Shinto, K.; Miyamoto, A.; Tanaka, T

2004-08-01

Beam dynamics in a thermionic RF gun for a new pre-injector in a future synchrotron radiation facility at Tohoku university has been studied by developing a 3-D Maxwell's equation solver. Backbombardment (BB) effect on a cathode, which is a crucial problem for performance of the thermionic RF gun, has been investigated. It is found that an external dipole magnetic field applying around the cathode is effective to reduce high-energy backstreaming electrons from the accelerating cell. However, the low-energy electrons coming back from the first cell inevitably hit the cathode, so that characteristics of the cathode material seems to be crucial for reduction of the BB effect.

Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

International Nuclear Information System (INIS)

Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Srour, Hussein

2011-01-01

Based on current voltage (I—V g ) and capacitance voltage (C—V g ) measurements, a reliable procedure is proposed to determine the effective surface potential V d (V g ) in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C—V g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C—V g , which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information. (semiconductor devices)

A thermionic energy converter with a molybdenum-alumina cermet emitter

NARCIS (Netherlands)

Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.

1990-01-01

A study is made of the properties of cermets as electrode materials for thermionic energy converters. For thermodynamic reasons it is expected that all cermets composed of pure Mo and refractory oxides have the same bare work function. From data on the work function of Mo in an oxygen atmosphere

Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

Energy Technology Data Exchange (ETDEWEB)

Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

2012-12-15

n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

A mathematical modeling framework to evaluate the performance of single diode and double diode based SPV systems

Directory of Open Access Journals (Sweden)

Sangram Bana

2016-11-01

Full Text Available In order to predict the performance of a PV system, a reliable and accurate simulation design of PV systems before being installed is a necessity. The present study concerns the development of single and double diode model of solar PV system and ensures the best suited model under specific environmental condition for accurate performance prediction. The information provided in the manufacturers’ data sheet is not sufficient for developing a Simulink based single and double diode models of PV module. These parameters are crucial to predict accurate performance of a PV module. These parameters of the proposed solar PV models have been calculated using an efficient iterative technique. This paper compares the simulation results of both the models with manufacturer’s data sheet to investigate the accuracy and validity. A MATLAB/Simulink based comparative performance analysis of these models under inconsistent atmospheric conditions and the effect of variations in model parameters has been carried out. Despite the simplicity, these models are highly sensitive and respond to a slight variation in temperature and insolation. It is observed that double diode PV model is more accurate under low intensity insolation or shading condition. The performance evaluation of the models under present study will be helpful to understand the I-V curves, which will enable us in predicting the solar PV system power production under variable input conditions.

Negative space charge effects in photon-enhanced thermionic emission solar converters

International Nuclear Information System (INIS)

Segev, G.; Weisman, D.; Rosenwaks, Y.; Kribus, A.

2015-01-01

In thermionic energy converters, electrons in the gap between electrodes form a negative space charge and inhibit the emission of additional electrons, causing a significant reduction in conversion efficiency. However, in Photon Enhanced Thermionic Emission (PETE) solar energy converters, electrons that are reflected by the electric field in the gap return to the cathode with energy above the conduction band minimum. These electrons first occupy the conduction band from which they can be reemitted. This form of electron recycling makes PETE converters less susceptible to negative space charge loss. While the negative space charge effect was studied extensively in thermionic converters, modeling its effect in PETE converters does not account for important issues such as this form of electron recycling, nor the cathode thermal energy balance. Here, we investigate the space charge effect in PETE solar converters accounting for electron recycling, with full coupling of the cathode and gap models, and addressing conservation of both electric and thermal energy. The analysis shows that the negative space charge loss is lower than previously reported, allowing somewhat larger gaps compared to previous predictions. For a converter with a specific gap, there is an optimal solar flux concentration. The optimal solar flux concentration, the cathode temperature, and the efficiency all increase with smaller gaps. For example, for a gap of 3 μm the maximum efficiency is 38% and the optimal flux concentration is 628, while for a gap of 5 μm the maximum efficiency is 31% and optimal flux concentration is 163

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

Science.gov (United States)

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

2016-03-01

We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

International Nuclear Information System (INIS)

Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

2011-01-01

We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

Progress in radiation immune thermionic integrated circuits

International Nuclear Information System (INIS)

Lynn, D.K.; McCormick, J.B.

1985-08-01

This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs

Progress in radiation immune thermionic integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Lynn, D.K.; McCormick, J.B. (comps.)

1985-08-01

This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

Control for nuclear thermionic power source

International Nuclear Information System (INIS)

Fletcher, J.C.; Sawyer, C.D.

1978-01-01

A control for a power source is described which includes nuclear fuel interspersed with thermionic converters, including a power regulator that maintains a substantially constant output voltage to a variable load, and a control circuit that drives a neutron flux regulator in accordance with the current supplied to the power regulator and the neutron flux density in the region of the converters. The control circuit generates a control signal which is the difference between the neutron flux density and a linear fucntion of the current, and which drives the neutron regulator in a direction to decrease or increase the neutron flux according to the polarity of the control signal

Development of integrated thermionic circuits for high-temperature applications

International Nuclear Information System (INIS)

McCormick, J.B.; Wilde, D.; Depp, S.; Hamilton, D.J.; Kerwin, W.; Derouin, C.; Roybal, L.; Dooley, R.

1981-01-01

A class of devices known as integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500 0 C is described. The evolution of the ITC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500 0 C environments for extended periods of time

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

Science.gov (United States)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

Energy Technology Data Exchange (ETDEWEB)

Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

2015-01-01

The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ{sub b} vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ{sub b,mean} assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact.

Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

International Nuclear Information System (INIS)

Venter, A.; Murape, D.M.; Botha, J.R.; Auret, F.D.

2015-01-01

The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ b vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ b,mean assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact

Design study on an independently-tunable-cells thermionic RF gun

International Nuclear Information System (INIS)

Hama, H.; Tanaka, T.; Hinode, F.; Kawai, M.

2006-01-01

Characteristics of a thermionic RF gun have been studied by a 3-D simulation code developed using an FDTD (Finite Difference Time Domain) method as a Maxwell's equations solver. The gun is consists of two independent power feeding cavities, so that we call it independently-tunable-cells (ITC)'-RF gun. The first cell is the cathode cell and the second one is an accelerating cell. The ITC gun can be operated at various modes of different RF-power ratio and phase between two cavities. Simulation study shows a velocity-bunching like effect may be occurred in the gun, so that the short pulse beam from the thermionic RF gun is a better candidate to produce the coherent THz synchrotron radiation. Expected bunch length with a total charge of ∼20 pC (1% energy width from the top energy) is around 200 fs (fwhm). Even the beam energy extracted from the gun is varied by which the input powers are changed, almost same shape of the longitudinal phase space can be produced by tuning the phase. (author)

A thermionic energy converter with A molybdenum alumina cermet emitter

NARCIS (Netherlands)

Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.; Yogi Goswami, D.

1988-01-01

The I-V characteristics of a thermionic converter equipped with a Mo-1w/o AI203 emitter and a Mo collector were measured. The conditions were varied over a limited range without, as well as with Cs. Work functions of Mo as well as Mo-1w/o AI203 were determined. Measurements were carried out in a

Communication: IR spectroscopy of neutral transition metal clusters through thermionic emission

NARCIS (Netherlands)

Lapoutre, V. J. F.; Haertelt, M.; Meijer, G.; Fielicke, A.; Bakker, J. M.

2013-01-01

The resonant multiple photon excitation of neutral niobium clusters using tunable infrared (IR) radiation leads to thermionic emission. By measuring the mass-resolved ionization yield as a function of IR wavenumber species selective IR spectra are obtained for Nb-n (n = 5-20) over the 200-350 cm(-1)

Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Science.gov (United States)

Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

2015-07-01

The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

Design and implementation of a fs-resolved transmission electron microscope based on thermionic gun technology

Energy Technology Data Exchange (ETDEWEB)

Piazza, L., E-mail: luca.piazza@epfl.ch [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland); Masiel, D.J. [Integrated Dynamic Electron Solutions, Inc., 455 Bolero Drive, Danville, CA 94526 (United States); LaGrange, T.; Reed, B.W. [Condensed Matter and Materials Division Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-356, Livermore, CA 94550 (United States); Barwick, B. [Department of Physics, Trinity College, 300 Summit St., Hartford, CT 06106 (United States); Carbone, Fabrizio [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland)

2013-09-23

Highlights: • We present the implementation of a femtosecond-resolved ultrafast TEM. • This is the first ultrafast TEM based on a thermionic gun geometry. • An additional condenser lens has been used to maximize the electron count. • We achieved a time resolution of about 300 fs and an energy resolution of 1 eV. - Abstract: In this paper, the design and implementation of a femtosecond-resolved ultrafast transmission electron microscope is presented, based on a thermionic gun geometry. Utilizing an additional magnetic lens between the electron acceleration and the nominal condenser lens system, a larger percentage of the electrons created at the cathode are delivered to the specimen without degrading temporal, spatial and energy resolution significantly, while at the same time maintaining the femtosecond temporal resolution. Using the photon-induced near field electron microscopy effect (PINEM) on silver nanowires the cross-correlation between the light and electron pulses was measured, showing the impact of the gun settings and initiating laser pulse duration on the electron bunch properties. Tuneable electron pulses between 300 fs and several ps can be obtained, and an overall energy resolution around 1 eV was achieved.

Beam emittance measurement from CERN thermionic guns

International Nuclear Information System (INIS)

Kester, O.; Rao, R.; Rinolfi, L.

1992-01-01

In the LEP Injector Linacs (LIL) a thermionic gun provides electron beams with different peak intensities at an energy of 80 keV. The beam emittances were estimated from the EGUN programme. Since the gun is of triode type, the main contribution to the emittance comes from the grid. The simulation programme does not model the real geometry by assuming a cylindrical symmetry, while the grid does not have such symmetry. A Gun Test Facility (GTF), allowing emittance measurements, based on the 3-gradients-method was installed. The experimental results are presented. (author) 6 refs.; 6 figs

Daily check of the electron beams with a diode system

Energy Technology Data Exchange (ETDEWEB)

Pilette, P [Hospital Civil de Charleroi (Belgium). Centre for Radiotherapy

1995-12-01

A fast systems to check all the accelerator beams on a daily basis has been developed. A cheap home-made detector, based on non-medical diodes (type 1N5408), has been used since July 1992 to verify all the electron beams every day. The relative energy and Top-cGy correspondence is verified with one single irradiation of less than 1 minute by 6 diodes fixed in a polystyrene phantom. The principle of construction, software implementation and results are presented.

Transient and steady-state analyses of an electrically heated Topaz-II Thermionic Fuel Element

International Nuclear Information System (INIS)

El-Genk, M.S.; Xue, H.

1992-01-01

Transient and steady-state analyses of electrically heated, Thermionic Fuel Elements (TFEs) for Topaz-II space power system are performed. The calculated emitter and collector temperatures, load electric power and conversion efficiency are in good agreement with reported data. In this paper the effects or Cs pressure, thermal power input, and load resistance on the steady-state performance of the TFE are also investigated. In addition, the thermal response of the ZrH moderator during a startup transient and following a change in the thermal power input is examined

Pre-clinical evaluation of a diode-based In vivo dosimetry system

International Nuclear Information System (INIS)

Trujillo, G.

1998-01-01

Diode detector systems are routinely used in a number of departments for the quality assurance of the delivered dose in radiation oncology (1,2,3,4,5). The main advantage of diode detectors for in vivo dosimetry (over TLDs, film dosimetry, ionization chambers) is that results are immediately available in real time, do not need external bias voltage and are more sensitive for the same detection volume than ionization chambers thereby allowing a direct and immediate check of the treatment accuracy. Also, is important to mention that is possible to obtain different accuracy levels. For example, in the case of the measurements designed for evaluating the dosimetric accuracy of a new treatment technique for dose escalation studies the action level should be tighter (the order of 2 % to 4 %, 2 standard deviations) than for routine measurements aiming to discover and correct for errors in the treatment of individual patients (± 5 % - 10 % or to avoid mis administrations (10 % - 15 %). This work describes the calibration method adopted and the evaluation of the accuracy and precision of in vivo dosimetry at Co 60 and 23 MV photon energies. Extensive phantoms measurements were made to determine the influence of physical conditions on the diode response. Parameters investigated included diode linearity, leakage, and measurement reproducibility, as well as the field size, SSD, and angular dependence. the practical consequences of these measurements are reported. There is still some controversy as to whether in vivo (diode) dosemeters are required for routine quality assurance purposes. Our work has shown that while care must be taken in choosing and handling diode detector systems they are able to provide an efficient and effective method of ensuring the dose delivered to the patient during treatment is within acceptable limits. (Author)

Solid-State Thermionic Nuclear Power for Megawatt Propulsion, Planetary Surface and Commercial Power Project

Data.gov (United States)

National Aeronautics and Space Administration — Thermionic (TI) power conversion is a promising technology first investigated for power conversion in the 1960’s, and of renewed interest due to modern...

Thermionic field emission in gold nitride Schottky nanodiodes

Science.gov (United States)

Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

2012-11-01

We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

2012-02-29

The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

Thermionic Properties of Carbon Based Nanomaterials Produced by Microhollow Cathode PECVD

Science.gov (United States)

Haase, John R.; Wolinksy, Jason J.; Bailey, Paul S.; George, Jeffrey A.; Go, David B.

2015-01-01

Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon-based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.

Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Ren, Jian; Yan, Dawei, E-mail: daweiyan@jiangnan.edu.cn; Yang, Guofeng; Wang, Fuxue; Xiao, Shaoqing; Gu, Xiaofeng [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

2015-04-21

Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

THERMIONIC EMISSION ENHANCEMENT FROM CESIUM COATED RHENIUM IN ELECTRIC FIELDS

Energy Technology Data Exchange (ETDEWEB)

de Steese, J. G.; Zollweg, R. J.

1963-04-15

The plasma-anode technique was used to observe anomalously high thermionic emission from a rhenium surface with small cesium coverage, where the work function of the composite surface is greater than the ionization potential of cesium. Data suggest that emission enhancement is caused by increased cesium coverage because of cesiumion trapping near the emitter surface under the influence of an ion-rich sheath. (auth)

Alternative model of space-charge-limited thermionic current flow through a plasma

Science.gov (United States)

Campanell, M. D.

2018-04-01

It is widely assumed that thermionic current flow through a plasma is limited by a "space-charge-limited" (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. Here, we formulate a fundamentally different current-limited mode. In the "inverse" mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. The inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

Nano-textured W shows improvement of thermionic emission properties

Energy Technology Data Exchange (ETDEWEB)

Barmina, E.V.; Serkov, A.A.; Shafeev, G.A. [General Physics Institute of the Russian Academy of Sciences, Wave Research Center of A.M. Prokhorov, Moscow (Russian Federation); Stratakis, E. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Materials Science and Technology Department, Heraklion (Greece); Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Physics Department, Heraklion (Greece); Stolyarov, V.N.; Stolyarov, I.N. [Roentgenprom, Protvino, Moscow (Russian Federation)

2012-01-15

Laser-assisted nano-texturing of W substrates cathodes via ablation in liquid environment is experimentally realized. Two laser sources are used, either a Ti:sapphire femtosecond laser or a Nd:YAG laser with pulse duration of 350 ps. Laser exposure of W results in the formation of hemi-spherical nanostructures situated on top of periodic ripples. Nano-textured thermionic W cathode demonstrates the decrease of the efficient work function by 0.3 eV compared to pristine surface. (orig.)

Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

Energy Technology Data Exchange (ETDEWEB)

Sakr, G.B. [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Fouad, S.S. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semicondcutor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel Basset, D.M. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

2013-02-15

Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

International Nuclear Information System (INIS)

Wernsman, Bernard

1997-01-01

A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

High Efficiency Thermionics (HET-IV) and Converter Advancement (CAP) programs. Final reports

Energy Technology Data Exchange (ETDEWEB)

Geller, C.B.; Murray, C.S.; Riley, D.R. [Bettis Atomic Power Lab., West Mifflin, PA (United States); Desplat, J.L.; Hansen, L.K.; Hatch, G.L.; McVey, J.B.; Rasor, N.S. [Rasor Associates, Inc., Sunnyvale, CA (United States)

1996-04-01

This report contains the final report of the High Efficiency Thermionics (HET-IV) Program, Attachment A, performed at Rasor Associates, Inc. (RAI); and the final report of the Converter Advancement Program (CAP), performed at the Bettis Atomic Power Laboratory, Attachment B. The phenomenology of cesium-oxygen thermionic converters was elucidated in these programs, and the factors that had prevented the achievement of stable, enhanced cesium-oxygen converter performance for the previous thirty years were identified. Based on these discoveries, cesium-oxygen vapor sources were developed that achieved stable performance with factor-of-two improvements in power density and thermal efficiency, relative to conventional, cesium-only ignited mode thermionic converters. Key achievements of the HET-IV/CAP programs are as follows: a new technique for measuring minute traces of oxygen in cesium atmospheres; the determination of the proper range of oxygen partial pressures for optimum converter performance--10{sup {minus}7} to 10{sup {minus}9} torr; the discovery, and analysis of the cesium-oxygen liquid migration and compositional segregation phenomena; the successful use of capillary forces to contain the migration phenomenon; the use of differential heating to control compositional segregation, and induce vapor circulation; the development of mechanically and chemically stable, porous reservoir structures; the development of precise, in situ oxygen charging methods; stable improvements in emitter performance, up to effective emitter bare work functions of 5.4 eV; stable improvements in barrier index, to value below 1.8 Volts; the development of detailed microscopic models for cesium-oxygen reservoir dynamics and collector work function behavior; and the discovery of new relationships between electrode geometry and Schock Instability.

Life Testing and Diagnostics of a Planar Out-of-Core Thermionic Converter

Science.gov (United States)

Thayer, Kevin L.; Ramalingam, Mysore L.; Young, Timothy J.; Lamp, Thomas R.

1994-07-01

This paper details the design and performance of an automated computer data acquisition system for a planar, out-of-core thermionic converter with CVD rhenium electrodes. The output characteristics of this converter have been mapped for emitter temperatures ranging from approximately 1700K to 2000K, and life testing of the converter is presently being performed at the design point of operation. An automated data acquisition system has been constructed to facilitate the collection of current density versus output voltage (J-V) and temperature data from the converter throughout the life test. This system minimizes the amount of human interaction necessary during the lifetest to measure and archive the data and present it in a usable form. The task was accomplished using a Macintosh Ilcx computer, two multiple-purpose interface boards, a digital oscilloscope, a sweep generator, and National Instrument's LabVIEW application software package.

Vortex diode jet

Science.gov (United States)

Houck, Edward D.

1994-01-01

A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Optical diagnosis system for intense electron beam diode plasma

International Nuclear Information System (INIS)

Yang Jie; Shu Ting; Zhang Jun; Fan Yuwei; Yang Jianhua; Liu Lie; Yin Yi; Luo Ling

2012-01-01

A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera (HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic (TTL) signal (5 V) with rise time of about 1.5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasma within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasma were acquired. (authors)

Fermi level splitting and thermionic current improvement in low-dimensional multi-quantum-well (MQW) p-i-n structures

International Nuclear Information System (INIS)

Varonides, Argyrios C.

2006-01-01

Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents

Time-dependent beam focusing at the DARHT-II injector diode

International Nuclear Information System (INIS)

Eylon, S.; Henestroza, E.; Fawley, W.; Yu, S.

1999-01-01

The injector for the second axis of the Dual-Axis Radiographic Hydrotest Facility (DARHT) is being designed and constructed at LBNL. The injector consists of a single gap diode extracting 2(micro)s, 2kA, 3.2 MeV electron beam from a 6.5 inches diameter thermionic dispenser cathode. The injector is powered through a ceramic column by a Marx generator. We also investigated the possibility of extracting a beam current of 4 kA. The focusing system for the electron beam consists of a Pierce electrostatic focusing electrode at the cathode and three solenoidal focusing magnets positioned between the anode and induction accelerator input. The off-energy components (beam-head) during the 400 ns energy rise time are overfocused, leading to beam envelope mismatch and growth resulting in the possibility of beam hitting the accelerator tube walls. The anode focusing magnets can be tuned to avoid the beam spill in the 2kA case. To allow beam-head control for the 4kA case we are considering the introduction of time-varying magnetic focusing field along the accelerator axis generated by a single-loop solenoid magnet positioned in the anode beam tube. We will present the beam-head dynamics calculations as well as the solenoid design and preliminary feasibility test results

Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurements

International Nuclear Information System (INIS)

Harrabi, Z.; Jomni, S.; Beji, L.; Bouazizi, A.

2010-01-01

In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φ b0 -bar of about 0.67 and 0.54 V and standard deviations σ s 2 of about 8.4x10 -3 and 4.2x10 -3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cm -2 K -2 ) of p-type GaAs and the mean barrier height Φ b0 -bar is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.

Laterally injected light-emitting diode and laser diode

Science.gov (United States)

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

International Nuclear Information System (INIS)

Lin, Yow-Jon; Lin, Jian-Huang

2014-01-01

Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

Numerical simulations of the thermionic electron gun for electron-beam welding and micromachining

Czech Academy of Sciences Publication Activity Database

Jánský, Pavel; Zlámal, J.; Lencová, Bohumila; Zobač, Martin; Vlček, Ivan; Radlička, Tomáš

2009-01-01

Roč. 84, č. 2 (2009), s. 357-362 ISSN 0042-207X R&D Projects: GA AV ČR IAA100650805 Institutional research plan: CEZ:AV0Z20650511 Keywords : Numerical simulation * Thermionic emission * Electron gun Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.975, year: 2009

Measures to alleviate the back bombardment effect of thermionic rf electron gun

International Nuclear Information System (INIS)

Huang, Y.; Xie, J.

1991-01-01

Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

Theoretical Current-Voltage Curve in Low-Pressure Cesium Diode for Electron-Rich Emission

Science.gov (United States)

Coldstein, C. M.

1964-01-01

Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.

Development of a Laser Induced Fluorescence (LIF) System with a Tunable Diode Laser

International Nuclear Information System (INIS)

Woo, Hyun Jong; Do, Jeong Jun; You, Hyun Jong; Choi, Geun Sik; Lee, Myoung Jae; Chung, Kyu Sun

2005-01-01

The Laser Induced Fluorescence (LIF) is known as one of the most powerful techniques for measurements of ion velocity distribution function (IVDF) and ion temperature by means of Doppler broadening and Doppler shift. The dye lasers are generally used for LIF system with 611.66 nm (in vac.) for Ar ion, the low power diode laser was also proposed by Severn et al with the wavelength of 664.55 nm and 668.61 nm (in vac.) for Ar ion. Although the diode laser has the disadvantages of low power and small tuning range, it can be used for LIF system at the low temperature plasmas. A tunable diode laser with 668.614 nm of center wavelength and 10 GHz mode hop free tuning region has been used for our LIF system and it can be measured the ion temperature is up to 1 eV. The ion temperature and velocity distribution function have been measured with LaB6 plasma source, which is about 0.23 eV with Ar gas and 2.2 mTorr working pressure

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Energy Technology Data Exchange (ETDEWEB)

Mayimele, M A, E-mail: meehleketo@gmail.com; Rensburg, J P van. Janse; Auret, F D; Diale, M

2016-01-01

We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm{sup −2} K{sup −2} were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

Science.gov (United States)

Trushin, Maxim

2018-04-01

The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

Development of Kabila rocket: A radioisotope heated thermionic plasma rocket engine

Directory of Open Access Journals (Sweden)

Kalomba Mboyi

2015-04-01

Full Text Available A new type of plasma rocket engine, the Kabila rocket, using a radioisotope heated thermionic heating chamber instead of a conventional combustion chamber or catalyst bed is introduced and it achieves specific impulses similar to the ones of conventional solid and bipropellant rockets. Curium-244 is chosen as a radioisotope heat source and a thermal reductive layer is also used to obtain precise thermionic emissions. The self-sufficiency principle is applied by simultaneously heating up the emitting material with the radioisotope decay heat and by powering the different valves of the plasma rocket engine with the same radioisotope decay heat using a radioisotope thermoelectric generator. This rocket engine is then benchmarked against a 1 N hydrazine thruster configuration operated on one of the Pleiades-HR-1 constellation spacecraft. A maximal specific impulse and power saving of respectively 529 s and 32% are achieved with helium as propellant. Its advantages are its power saving capability, high specific impulses and simultaneous ease of storage and restart. It can however be extremely voluminous and potentially hazardous. The Kabila rocket is found to bring great benefits to the existing spacecraft and further research should optimize its geometric characteristics and investigate the physical principals of its operation.

RSMASS system model development

International Nuclear Information System (INIS)

Marshall, A.C.; Gallup, D.R.

1998-01-01

1998. A radioisotope space power system model RISMASS is also under development. RISMASS will optimize and predict system masses for radioisotope power sources coupled with close-spaced thermionic diodes. Although RSMASS-D models have been developed for a broad variety of space nuclear power and propulsion systems, only a few concepts will be included in the releasable RSMASS-T computer code. A follow-on effort is recommended to incorporate all previous models as well as solar power system models into one general code. The proposed Space Power and propulsion system MASS (SPMASS) code would provide a consistent analysis tool for comparing a very broad range of alternative power and propulsion systems for any required power level and operating conditions. As for RSMASS-T the SPMASS model should be a certified, fully documented computer code available for general use. The proposed computer program would provide space mission planners with the capability to quickly and cost effectively explore power system options for any space mission. The code should be applicable for power requirements from as low as a few milliwatts (solar and isotopic system options) to many megawatts for reactor power and propulsion systems

Few-photon optical diode

OpenAIRE

Roy, Dibyendu

2010-01-01

We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

Nuclear thermionic power plant integration problems

International Nuclear Information System (INIS)

Fraas, A.P.

1967-02-01

The numerous boundary conditions to be met in preparing a well proportioned, properly integrated design for a thermionic cell reactor are discussed with the emphasis on materials and fabrication problems. Pertinent experience with fuel elements, tube header sheets, electric heaters, and pressure vessels is cited to highlight key limitations that have been encountered in structurally similar equipment. A reference design is presented to indicate how one might attempt to satisfy all of the many boundary conditions. The study indicates that it will be difficult to get a reactor core power density greater than about 35 w/cm 3 and that, while it is possible to minimize the ill effects of failures within individual cells by employing series-parallel connections, the study further indicates that there is inherently a high probability of leaks and electrical shorts and arcs within the reactor so that it is doubtful that good reliability can be obtained

Thermionic RF Gun and Linac Pre-Injector for SPEAR3

Energy Technology Data Exchange (ETDEWEB)

Park, S.

2003-08-11

Preparations are underway to upgrade the Spear2 to the third generation light source. Installation of all the subsystems will start in April 2003. Although the Spear3 RF system is entirely different from the present form, the pre-injector gun/linac and booster synchrotron will remain the same even after the upgrade. The thermionic rf gun reliability and stability are to be improved to inject 500 mA of stored current in shortest possible time. When a top-up mode is enforced, where the stored beam decay is replenished to maintain the constant current and thus constant light intensity, the Spear3 will take injection every few minutes. In that case the gun, linac, and booster must stay on at all times. In this report we will describe some improvements made on the gun and linac in the recent past, as well as their present performance and future upgrade to be made.

Patient dosimetry quality assurance program with a commerical diode system

International Nuclear Information System (INIS)

Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.

1994-01-01

The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs

885-nm laser diode array pumped ceramic Nd:YAG master oscillator power amplifier system

Science.gov (United States)

Yu, Anthony W.; Li, Steven X.; Stephen, Mark A.; Seas, Antonios; Troupaki, Elisavet; Vasilyev, Aleksey; Conley, Heather; Filemyr, Tim; Kirchner, Cynthia; Rosanova, Alberto

2010-04-01

The objective of this effort is to develop more reliable, higher efficiency diode pumped Nd:YAG laser systems for space applications by leveraging technology investments from the DoD and other commercial industries. Our goal is to design, build, test and demonstrate the effectiveness of combining 885 nm laser pump diodes and the use of ceramic Nd:YAG for future flight missions. The significant reduction in thermal loading on the gain medium by the use of 885 nm pump lasers will improve system efficiency.

Diode laser based light sources for biomedical applications

DEFF Research Database (Denmark)

Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

2013-01-01

Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

Energy Technology Data Exchange (ETDEWEB)

Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

2016-09-28

In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

Investigation into the accuracy of a proposed laser diode based multilateration machine tool calibration system

International Nuclear Information System (INIS)

Fletcher, S; Longstaff, A P; Myers, A

2005-01-01

Geometric and thermal calibration of CNC machine tools is required in modern machine shops with volumetric accuracy assessment becoming the standard machine tool qualification in many industries. Laser interferometry is a popular method of measuring the errors but this, and other alternatives, tend to be expensive, time consuming or both. This paper investigates the feasibility of using a laser diode based system that capitalises on the low cost nature of the diode to provide multiple laser sources for fast error measurement using multilateration. Laser diode module technology enables improved wavelength stability and spectral linewidth which are important factors for laser interferometry. With more than three laser sources, the set-up process can be greatly simplified while providing flexibility in the location of the laser sources improving the accuracy of the system

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-08-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

International Nuclear Information System (INIS)

Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.

2016-01-01

In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

DEFF Research Database (Denmark)

Reck, Kasper; Dionigi, Fabio; Hansen, Ole

2014-01-01

electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

Science.gov (United States)

Mahato, Somnath; Puigdollers, Joaquim

2018-02-01

Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

Science.gov (United States)

Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

2017-09-13

A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

Using Multispectral Imaging to Measure Temperature Profiles and Emissivity of Large Thermionic Dispenser, Cathodes

International Nuclear Information System (INIS)

Simmons, D.F.; Fortgang, C.M.; Holtkamp, D.B.

2001-01-01

Thermionic dispenser cathodes are widely used in modern high-power microwave tubes. Use of these cathodes has led to significant improvement in performance. In recent years these cathodes have been used in electron linear accelerators (LINACs), particularly in induction LINACs, such as the Experimental Test Accelerator at Lawrence Livermore National Laboratory and the Relativistic Test Accelerator at Lawrence Berkeley National Laboratory. For induction LINACs, the thermionic dispenser cathode provides greater reproducibility, longer pulse lengths, and lower emittance beams than does a field emission cathode. Los Alamos National Laboratory is fabricating a dual-axis X-ray radiography machine called dual-axis radiograph hydrodynamic test (DARHT). The second axis of DARHT consists of a 2-kA, 20-MeV induction LINAC that uses a 3.2-MeV electron gun with a tungsten thermionic-dispenser cathode. Typically the DARHT cathode current density is 10 A/cm 2 at 1050 C. Under these conditions current density is space-charge limited, which is desirable since current density is independent of temperature. At lower temperature (the temperature-limited regime) there are variations in the local current density due to a nonuniform temperature profile. To obtain the desired uniform current density associated with space-charge limited operation, the coolest area on the cathode must be at a sufficiently high temperature so that the emission is space-charge limited. Consequently, the rest of the cathode is emitting at the same space-charge-limited current density but is at a higher temperature than necessary. Because cathode lifetime is such a strong function of cathode temperature, there is a severe penalty for nonuniformity in the cathode temperature. For example, a temperature increase of 50 C means cathode lifetime will decrease by a factor of at least four. Therefore, we are motivated to measure the temperature profiles of our large-area cathodes

Simulations of thermionic suppression during tungsten transient melting experiments.

Czech Academy of Sciences Publication Activity Database

Komm, Michael; Tolias, P.; Ratynskaia, S.; Dejarnac, Renaud; Gunn, J. P.; Krieger, K.; Podolník, Aleš; Pitts, R.A.; Pánek, Radomír

T170, December (2017), č. článku 014069. ISSN 0031-8949. [PFMC 2017: 16th International Conference on Plasma-Facing Materials and Components for Fusion Applications. Düsseldorf, 16.05.2017-19.05.2017] R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : tokamak * thermionic emission * tungsten * melt * plasma-facing component Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: 1.3 Physical sciences Impact factor: 1.280, year: 2016 http://iopscience.iop.org/article/10.1088/1402-4896/aa9209

Multi-channel pulser for the SLC thermionic electron source

International Nuclear Information System (INIS)

Browne, M.J.; Clendenin, J.E.; Corredoura, P.L.; Jobe, R.K.; Koontz, R.F.; Sodja, J.

1985-01-01

A new pulser developed for the SLC thermionic gun has been operational since September 1984. It consists of two planar triode amplifiers with a common output triode driving the gun cathode to produce two independent pulses of up to 9A with a 3 nsec FWHM pulse width. Three long-pulse amplifiers are also connected to the cathode to produce pulses with widths controllable between 100 nsec and 1.6 μsec. Each amplifier has independent timing and amplitude control through a fiber optic link to the high voltage plane of the gun cathode-grid structure. The pulser and its operating characteristics are described. 15 refs., 3 figs

Control by hardware of government systems for laser diodes with STM32F4 and Peltier cells

International Nuclear Information System (INIS)

Ulloa Solano, Natalia Irina

2013-01-01

A low cost prototype of a government system is developed for laser diodes with STM32F4 microcontrollers and Peltier cooling. Commercial and homemade government system (with STM32F4 microcontrollers ) are investigated with the objective of adequately control the current of a laser diode. Characteristics of STM32F4 microcontrollers are described. The low cost platforms as the Arduino and Raspberry Pi are compared. A bibliographical and documentary compilation is realized for the preliminary study of the components and tools to use in the prototype. The theory related with the heat transfer between a laser diode and the outside, and a Peltier cell and outside is summarized. A heat dissipation model is proposed of a system formed by a laser diode and Peltier cell. A control system of current and fed back temperature is designed and implemented to allow adequately control laser diodes without and with photodiode (2 pickups and 3 pickups respectively). The viability of control with free software is studied and corroborated. The temperature control of the laser diode using a Peltier cell as cooler has been possible through a simple control of ON/OFF mode. The integration of devices such as ADC, DAC, timers and facilities of STM32F4 microcontroller, have allowed to optimize costs by hardware, save time and costs. Also, the incorporation of the Cortex-M4 processor has optimized the consumption of operational resources and has executed much of its instruction set of efficient way. Because of this, the project has complied with its maximum as to low cost is concerned [es

Synthesis, thermionic emission and magnetic properties of (NdxGd1–x)B6

International Nuclear Information System (INIS)

Bao Li-Hong; Zhang Jiu-Xing; Zhou Shen-Lin; Tegus

2011-01-01

Polycrystalline rare-earth hexaborides (Nd x Gd 1–x )B 6 (x = 0, 0.2, 0.6, 0.8, 1) were prepared by the reactive spark plasma sintering (SPS) method using mixed powder of GdH 2 , NdH 2 and B. The effects of Nd doping on the crystal structure, the grain orientation, the thermionic emission and the magnetic properties of the hexaboride were investigated by X-ray diffraction, electron backscattered diffraction and magnetic measurements. It is found that all the samples sintered by the SPS method exhibit high densities (> 95%) and high values of Vickers hardness (2319 kg/mm 2 ). The values are much higher than those obtained in the traditional method. With the increase of Nd content, the thermionic emission current density increases from 11 to 16.30 A/cm 2 and the magnetic phase transition temperature increases from 5.85 to 7.95 K. Thus, the SPS technique is a suitable method to synthesize the dense rare-earth hexaborides with excellent properties. (interdisciplinary physics and related areas of science and technology)

Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

Science.gov (United States)

Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

2015-03-01

In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

A homogeneous focusing system for diode lasers and its applications in metal surface modification

Science.gov (United States)

Wang, Fei; Zhong, Lijing; Tang, Xiahui; Xu, Chengwen; Wan, Chenhao

2018-06-01

High power diode lasers are applied in many different areas, including surface modification, welding and cutting. It is an important technical trend in laser processing of metals in the future. This paper aims to analyze the impact of the shape and homogeneity of the focal spot of the diode laser on surface modification. A focusing system using the triplet lenses for a direct output diode laser which can be used to eliminate coma aberrations is studied. A rectangular stripe with an aspect ratio from 8:1 to 25:1 is obtained, in which the power is homogeneously distributed along the fast axis, the power is 1117.6 W and the peak power intensity is 1.1587 × 106 W/cm2. This paper also presents a homogeneous focusing system by use of a Fresnel lens, in which the incident beam size is 40 × 40 mm2, the focal length is 380 mm, and the dimension of the obtained focal spot is 2 × 10 mm2. When the divergence angle of the incident light is in the range of 12.5-20 mrad and the pitch is 1 mm, the obtained homogeneity in the focal spot is the optimum (about 95.22%). Experimental results show that the measured focal spot size is 2.04 × 10.39 mm2. This research presents a novel design of homogeneous focusing systems for high power diode lasers.

Design of interferometer system for Keda Torus eXperiment using terahertz solid-state diode sources

International Nuclear Information System (INIS)

Xie, Jinlin; Wang, Haibo; Li, Hong; Lan, Tao; Liu, Adi; Liu, Wandong; Yu, Changxuan; Ding, Weixing

2014-01-01

A solid-state source based terahertz (THz) interferometer diagnostic system has been designed and characterized for the Keda Torus eXperiment (KTX). The THz interferometer utilizes the planar diodes based frequency multiplier (X48) to provide the probing beam at fixed frequency 0.650 THz, and local oscillator is provided by an independent solid-state diode source with tunable frequency (0.650 THz +/− 10 MHz). Both solid-state sources have approximately 1 mW power. The planar-diode mixers optimized for high sensitivity, ∼750 mV/mW, are used in the heterodyne detection system, which permits multichannel interferometer on KTX with a low phase noise. A sensitivity of e l> min = 4.5 × 10 16 m −2 and a temporal resolution of 0.2 μs have been achieved during the initial bench test

Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

Directory of Open Access Journals (Sweden)

Ricardo Vera

2010-04-01

Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurements

International Nuclear Information System (INIS)

Dökme, Ilbilge; Altındal, Şemsettin; Afandiyeva, Izzet M

2008-01-01

The forward and reverse bias current–voltage (I–V) characteristics of Al–TiW–Pd 2 Si/n-Si Schottky barrier diodes (SBDs) were measured in the temperature range of 300–400 K. The estimated zero-bias barrier height Φ B0 and the ideality factor n assuming thermionic emission (TE) theory show a strong temperature dependence. While n decreases, Φ B0 increases with increasing temperature. The Richardson plot is found to be linear in the temperature range measured, but the activation energy value of 0.378 eV and the Richardson constant (A*) value of 15.51 A cm −2 K −2 obtained in this plot are much lower than the known values. Such behavior is attributed to Schottky barrier inhomogeneities by assuming a Gaussian distribution of barrier heights (BHs) due to BH inhomogeneities that prevail at the interface. Also, the Φ B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and Φ B0 = 0.535 eV and σ 0 = 0.069 V for the mean BH and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, the modified ln(I 0 /T 2 ) − q 2 σ 2 0 /2k 2 T 2 versus q/kT plot gives Φ B0 and A* as 0.510 eV and 121.96 A cm −2 K −2 , respectively. This value of the Richardson constant 121.96 A cm −2 K −2 is very close to the theoretical value of 120 A K −2 cm −2 for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of the Al–TiW–Pd 2 Si/n-Si Schottky barrier diodes can be successfully explained on the basis of a thermionic emission mechanism with a Gaussian distribution of the BHs

Practical microwave electron devices

CERN Document Server

Meurant, Gerard

2013-01-01

Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions.

Thermic diode performance characteristics and design manual

Science.gov (United States)

Bernard, D. E.; Buckley, S.

1979-01-01

Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

Reducing Energy Degradation Due to Back-bombardment Effect with Modulated RF Input in S-band Thermionic RF Gun

Science.gov (United States)

Kii, Toshiteru; Nakai, Yoko; Fukui, Toshio; Zen, Heishun; Kusukame, Kohichi; Okawachi, Norihito; Nakano, Masatsugu; Masuda, Kai; Ohgaki, Hideaki; Yoshikawa, Kiyoshi; Yamazaki, Tetsuo

2007-01-01

Energy degradation due to back-bombardment effect is quite serious to produce high-brightness electron beam with long macro-pulse with thermionic rf gun. To avoid the back-bombardment problem, a laser photo cathode is used at many FEL facilities, but usually it costs high and not easy to operate. Thus we have studied long pulse operation of the rf gun with thermionic cathode, which is inexpensive and easy to operate compared to the photocathode rf gun. In this work, to reduce the energy degradation, we controlled input rf power amplitude by controlling pulse forming network of the power modulator for klystron. We have successfully increased the pulse duration up to 4 μs by increasing the rf power from 7.8 MW to 8.5 MW during the macro pulse.

Performance of the cold powered diodes and diode leads in the main magnets of the LHC

CERN Document Server

Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

2015-01-01

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

Design, construction and measurements of an alpha magnet as a solution for compact bunch compressor for the electron beam from Thermionic RF Gun

Science.gov (United States)

Rajabi, A.; Jazini, J.; Fathi, M.; Sharifian, M.; Shokri, B.

2018-03-01

The beam produced by a thermionic RF gun has wide energy spread that makes it unsuitable for direct usage in photon sources. Here in the present work, we optimize the extracted beam from a thermionic RF gun by a compact economical bunch compressor. A compact magnetic bunch compressor (Alpha magnet) is designed and constructed. A comparison between simulation results and experimental measurements shows acceptable conformity. The beam dynamics simulation results show a reduction of the energy spread as well as a compression of length less than 1 ps with 2.3 mm-mrad emittance.

Spin-current diode with a ferromagnetic semiconductor

International Nuclear Information System (INIS)

Sun, Qing-Feng; Xie, X. C.

2015-01-01

Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

International Nuclear Information System (INIS)

Peng Yingquan; Lu Feiping

2006-01-01

The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

Evaluation of precision in measurements of uranium isotope ratio by thermionic mass spectrometry

International Nuclear Information System (INIS)

Moraes, N.M.P. de; Rodrigues, C.

1977-01-01

The parameters which affect the precision and accuracy of uranium isotopic ratios measurements by thermionic mass spectrometry are discussed. A statistical designed program for the analysis of the internal and external variances are presented. It was done an application of this statistical methods, in order to get mass discrimination factor, and its standard mean deviation, by using some results already published for 235 U/ 238 U ratio in NBS uranium samples, and natural uranium [pt

Electromagnetic wave analogue of electronic diode

OpenAIRE

Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

2010-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

Science.gov (United States)

Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

2017-07-01

This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

Science.gov (United States)

Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

2011-08-01

We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

Developments in lead-salt diode lasers

International Nuclear Information System (INIS)

Partin, D.L.

1985-01-01

Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

Infrared cavity ring-down spectroscopy with a CW diode laser system

NARCIS (Netherlands)

Hemerik, M.M.; Kroesen, G.M.W.; Doebele, H.F.; Muraoka, K.

1999-01-01

We report on the first measurements with our CRDS setup. Although the diode laser system was out of order, we were able to test the most important parts with the use of a CO laser. The first results show a ring-down time of 1.54 ~is, which is in perfect agreement with the predicted reflectivity of

Analysis of thermionic DC electron gun for 125 MeV linac

International Nuclear Information System (INIS)

Kanno, K.; Sato, Isamu; Sato, K.

2000-01-01

The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

Analysis of thermionic DC electron gun for 125 MeV linac

Energy Technology Data Exchange (ETDEWEB)

Kanno, K. [Graduate School of Science and Technology, Nihon Univ., Funabashi, Chiba (Japan); Sato, Isamu; Sato, K. [Nihon Univ., Funabashi, Chiba (Japan). Atomic Energy Research Inst] [and others

2000-07-01

The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

Adherence of diamond films on refractory metal substrates for thermionic applications

International Nuclear Information System (INIS)

Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

1991-01-01

Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

KAUST Repository

Lee, Changmin; Shen, Chao; Farrell, Robert M.; Nakamura, Shuji; Ooi, Boon S.; Bowers, John E.; DenBaars, Steven P.; Speck, James S.; Cozzan, Clayton; Alyamani, Ahmed Y.

2018-01-01

diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both

Particle Simulations of a Thermionic RF Gun with Gridded Triode Structure for Reduction of Back-Bombardment

CERN Document Server

Kusukame, K; Kii, T; Masuda, K; Nakai, Y; Ohgaki, H; Yamazaki, T; Yoshikawa, K; Zen, H

2005-01-01

Thermionic RF guns show advantageous features compared with photocathode ones such as easy operation and much higher repetition rate of micropulses, both of which are suitable for their application to high average power FELs. They however suffer from the back-bombardment effect [1], i.e., in conventional RF guns, electrons are extracted from cathode also in the latter half of accelerating phase and tend to back-stream to hit the cathode, and as a result the macropulse duration is limited down to severalμsec Against this adverse effect in thermionic RF guns, introduction of the triode structure has been proposed [2], where the accelerating phase and amplitude nearby the cathode can be controlled regardless of the phase of the first accelerating cell in the conventional RF gun. Our one-dimensional particle simulation results predict that the back-bombardment power can be reduced by 99 % only with 30-40 kW RF power fed to the grid in the present triode structure with an optimal phase difference from th...

Development of Radiation-Resistant In-Water Wireless Transmission System Using Light Emitting Diodes and Photo Diodes

Science.gov (United States)

Takeuchi, T.; Shibata, H.; Otsuka, N.; Uehara, T.; Tsuchiya, K.; Shibagaki, T.; Komanome, H.

2016-10-01

Several kinds of commercially available light emitting diodes (LED) and photo diodes (PD) were irradiated with 60Co gamma ray up to 1 MGy for development of a radiation-resistant in-water wireless transmission system using visible light. The lens parts of the LEDs turned brown by the irradiation and their colors became dark with the absorbed dose. The total luminous fluxes decreased with the absorbed dose and the LED with shorter emission wavelength had the higher decrease rate. Meanwhile, the current-voltage characteristics hardly changed. These results indicate that the decreases of the total luminous flux of the LEDs were mainly caused not by the degradation of the semiconductor parts but by the coloring of the lens parts by the irradiation. On the other hand, the light sensitivities of the PDs decreased with the absorbed dose. The PDs with the window part which turned a darker color had the higher decrease rate. These results indicate that the decreases of light sensitivities of the PDs were also mainly caused by the coloring of the resin parts by the irradiation. If the wireless transmission is performed using the candidate LED and PD between 5 meters in water, using a few LEDs and PDs, the PD's output current generated by the emission light of the LED is estimated to be detectable even considering the effects of the absorption of the light in water and the increased dark current by the irradiation. Therefore, a radiation resistant in-water transmission system can be constructed using commercially available LEDs and PDs in principle.

Performance review of thermionic electron gun developed for RF linear accelerators at RRCAT

International Nuclear Information System (INIS)

Wanmode, Yashwant; Mulchandani, J.; Reddy, T.S.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

2015-01-01

RRCAT is engaged in development of RF electron linear accelerator for irradiation of industrial and agricultural products. Thermionic electron gun is primary source for this accelerator as beam current in the RF accelerator is modest and thermionic emission is most prevalent option for electron gun development. An electron gun has to meet high cathode emission capability, low filament power, good accessibility for cathode replacement and should provide short time for maintenance. Electron linear accelerator up to beam energy of 10 MeV require electron source of 45-50 keV beam energy and emission current of 1 A. Electron optics of gun and electron beam profile simulations were carried out using CST's particle tracking code and EGUN code. Triode type electron gun of cathode voltage 50 kV pulsed has been designed, developed and integrated with 10 MeV electron linear accelerators at RRCAT. Beam current of more than 600 mA has been measured with faraday cup in the test stand developed for characterizing the electron gun. Two accelerators one is imported and another one developed indigenously has been energized using this electron gun. Beam energy of 5-10 MeV has been achieved with beam current of 250-400 mA by integrating this electron gun with the linear accelerator. This paper reviews the performance of indigenously developed electron gun for both linear accelerators. (author)

Development of a thermionic magnicon amplifier at 11.4 GHz. Technical progress report, 16 May 1994--31 December 1995

International Nuclear Information System (INIS)

Gold, S.H.; Fliflet, A.W.; Manheimer, W.M.

1995-01-01

This is a progress report on a four-year research program entitled 'Development of a Thermionic Magnicon Amplifier at 11.4 GHz', which is under way in the Plasma Physics Division of the Naval Research Laboratory (NRL) under Interagency Agreement DE-AI02-94ER40681. This report covers the period 16 May 1994 through 31 December 1995. The magnicon is an advanced microwave tube with potential application to future high gradient linear accelerators such as TeV colliders. Under this program, NRL plans to build and test a thermionic magnicon amplifier tube powered by a 500 kV, 200 A, 10 Hz modulator with a 1 μsec pulse. However, the experiments that were carried out during the period covered by this report were driven by a single-shot Marx generator, and the electron beam was produced from a graphite plasma cathode

A Fabry-Pérot electro-optic sensing system using a drive-current-tuned wavelength laser diode.

Science.gov (United States)

Kuo, Wen-Kai; Wu, Pei-Yu; Lee, Chang-Ching

2010-05-01

A Fabry-Pérot enhanced electro-optic sensing system that utilizes a drive-current-tuned wavelength laser diode is presented. An electro-optic prober made of LiNbO(3) crystal with an asymmetric Fabry-Pérot cavity is used in this system. To lock the wavelength of the laser diode at resonant condition, a closed-loop power control scheme is proposed. Experiment results show that the system can keep the electro-optic prober at high sensitivity for a long working time when the closed-loop control function is on. If this function is off, the sensitivity may be fluctuated and only one-third of the best level in the worst case.

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-01-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

Studies of cold protection diodes

International Nuclear Information System (INIS)

Carcagno, R.; Zeigler, J.

1990-03-01

The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

Thermionic source design

International Nuclear Information System (INIS)

True, R.

1988-01-01

This paper describes codes and methods used to design high quality diode and gridded Pierce guns. Such guns are used in travelling wave tubes, klystrons, linear accelerators, free-electron lasers, and other E-beam devices. PC code TMLBMC is discussed. Either this code (or PRCGUN) can be used to obtain a preliminary gun design. Two methods useful in determining the electrode contours external to the beam (focus electrode and anode with hole) are presented. These are based on matching the fields along the beam edge and in the center of the Pierce gun. An analytic method, and a numerical method based on the solution of Laplace's equation (in combination with data from TMLBMC), are presented

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Next generation diode lasers with enhanced brightness

Science.gov (United States)

Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

2018-02-01

High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

A new light emitting diode-light emitting diode portable carbon dioxide gas sensor based on an interchangeable membrane system for industrial applications.

Science.gov (United States)

de Vargas-Sansalvador, I M Pérez; Fay, C; Phelan, T; Fernández-Ramos, M D; Capitán-Vallvey, L F; Diamond, D; Benito-Lopez, F

2011-08-12

A new system for CO(2) measurement (0-100%) based on a paired emitter-detector diode arrangement as a colorimetric detection system is described. Two different configurations were tested: configuration 1 (an opposite side configuration) where a secondary inner-filter effect accounts for CO(2) sensitivity. This configuration involves the absorption of the phosphorescence emitted from a CO(2)-insensitive luminophore by an acid-base indicator and configuration 2 wherein the membrane containing the luminophore is removed, simplifying the sensing membrane that now only contains the acid-base indicator. In addition, two different instrumental configurations have been studied, using a paired emitter-detector diode system, consisting of two LEDs wherein one is used as the light source (emitter) and the other is used in reverse bias mode as the light detector. The first configuration uses a green LED as emitter and a red LED as detector, whereas in the second case two identical red LEDs are used as emitter and detector. The system was characterised in terms of sensitivity, dynamic response, reproducibility, stability and temperature influence. We found that configuration 2 presented a better CO(2) response in terms of sensitivity. Copyright © 2011 Elsevier B.V. All rights reserved.

High-efficiency AlxGa1-xAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters

Science.gov (United States)

Feng, Cheng; Zhang, Yijun; Qian, Yunsheng; Wang, Ziheng; Liu, Jian; Chang, Benkang; Shi, Feng; Jiao, Gangcheng

2018-04-01

A theoretical emission model for AlxGa1-xAs/GaAs cathode with complex structure based on photon-enhanced thermionic emission is developed by utilizing one-dimensional steady-state continuity equations. The cathode structure comprises a graded-composition AlxGa1-xAs window layer and an exponential-doping GaAs absorber layer. In the deduced model, the physical properties changing with the Al composition are taken into consideration. Simulated current-voltage characteristics are presented and some important factors affecting the conversion efficiency are also illustrated. Compared with the graded-composition and uniform-doping cathode structure, and the uniform-composition and uniform-doping cathode structure, the graded-composition and exponential-doping cathode structure can effectively improve the conversion efficiency, which is ascribed to the twofold built-in electric fields. More strikingly, this graded bandgap structure is especially suitable for photon-enhanced thermionic emission devices since a higher conversion efficiency can be achieved at a lower temperature.

A single-molecule diode

Science.gov (United States)

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-01-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

PWM Regulation of Grid-Tied PV System on the Base of Photovoltaic-Fed Diode-Clamped Inverters

Directory of Open Access Journals (Sweden)

Oleschuk V.I.

2015-12-01

Full Text Available Investigation of grid-tied photovoltaic system on the base of two diode-clamped inverters, controlled by specific algorithms of pulse-width modulation (PWM, has been done. This system includes two strings of photovoltaic panels feeding two diode-clamped inverters. The outputs of inverters are connected with the corresponding windings on the primary side of three-phase transformer, connected with a grid. In order to reduce phase voltage distortion and to increase efficiency of operation of the system, special scheme of control and modulation of inverters has been used, providing minimization of common-mode voltages and voltage waveforms symmetries under different operating conditions. Detailed simulation of processes in this photovoltaic-fed power conversion system has been executed. The results of simulations verify good performance of photovoltaic system regulated in accordance with specific strategy of control and modulation.

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

Science.gov (United States)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

OpenAIRE

Defu Chen; Huifen Zheng; Zhiyong Huang; Huiyun Lin; Zhidong Ke; Shusen Xie; Buhong Li

2012-01-01

The aim of this study is to develop a light-emitting diode- (LED-) based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT). This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irrad...

Design study of a low-emittance high-repetition rate thermionic rf gun

Directory of Open Access Journals (Sweden)

A. Opanasenko

2017-05-01

Full Text Available We propose a novel gridless continuous-wave radiofrequency (rf thermionic gun capable of generating nC ns electron bunches with a rms normalized slice emittance close to the thermal level of 0.3 mm mrad. In order to gate the electron emission, an externally heated thermionic cathode is installed into a stripline-loop conductor. Two high-voltage pulses propagating towards each other in the stripline-loop overlap in the cathode region and create a quasielectrostatic field gating the electron emission. The repetition rate of pulses is variable and can reach up to one MHz with modern solid-state pulsers. The stripline attached to a rf gun cavity wall has with the wall a common aperture that allows the electrons to be injected into the rf cavity for further acceleration. Thanks to this innovative gridless design, simulations suggest that the bunch emittance is approximately at the thermal level after the bunch injection into the cavity provided that the geometry of the cathode and aperture are properly designed. Specifically, a concave cathode is adopted to imprint an Ƨ-shaped distribution onto the beam transverse phase-space to compensate for an S-shaped beam distribution created by the spherical aberration of the aperture-cavity region. In order to compensate for the energy spread caused by rf fields of the rf gun cavity, a 3rd harmonic cavity is used. A detailed study of the electrodynamics of the stripline and rf gun cavity as well as the beam optics and bunch dynamics are presented.

Dual-wavelength high-power diode laser system based on an external-cavity tapered amplifier with tunable frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2012-01-01

knowledge, this is the broadest tuning range of the frequency difference from a dual-wavelength diode laser system. The spectrum, output power, and beam quality of the diode laser system are characterized. The power stability of each wavelength is measured, and the power fluctuations of the two wavelengths......A dual-wavelength high-power semiconductor laser system based on a tapered amplifier with double-Littrow external cavity is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 10.0 THz. To our...

Dosimetric validation of new semiconductor diode dosimetry system for intensity modulated radiotherapy

Directory of Open Access Journals (Sweden)

Rajesh Kinhikar

2012-01-01

Full Text Available Introduction: The new diode Isorad was validated for intensity modulated radiotherapy (IMRT and the observations during the validation are reported. Materials and Methods: The validation includes intrinsic precision, post-irradiation stability, dose linearity, dose-rate effect, angular response, source to surface (SSD dependence, field size dependence, and dose calibration. Results: The intrinsic precision of the diode was more than 1% (1 σ. The linearity found in the whole range of dose analyzed was 1.93% (R 2 = 1. The minimum and maximum variation in the measured and calculated dose were found to be 0.78% (with 25 MU at ioscentre and 4.8% (with 1000 MU at isocentre, respectively. The maximal variation in angular response with respect to arbitrary angle 0° found was 1.31%. The diode exhibited a 51.7% and 35% decrease in the response in the 35 cm and 20 cm SSD range, respectively. The minimum and the maximum variation in the measured dose from the diode and calculated dose were 0.82% (5 cm × 5 cm and 3.75% (30 cm × 30 cm, respectively. At couch 270°, the response of the diode was found to vary maximum by 1.4% with ΁ 60 gantry angle. Mean variation between measured dose with diode and planned dose by TPS was found to be 1.3% (SD 0.75 for IMRT patient-specific quality assurance. Conclusion: For the evaluation of IMRT, use of cylindrical diode is strongly recommended.

Does laser diode irradiation improve the degree of conversion of simplified dentin bonding systems?

Directory of Open Access Journals (Sweden)

Leticia Ferreira de Freitas BRIANEZZI

Full Text Available Abstract Simplified dentin-bonding systems are clinically employed for most adhesive procedures, and they are prone to hydrolytic degradation. Objective This study aimed to investigate the effect of laser diode irradiation on the degree of conversion (DC, water sorption (WS, and water solubility (WSB of these bonding systems in an attempt to improve their physico-mechanical resistance. Material and Methods Two bonding agents were tested: a two-step total-etch system [Adper™ Single Bond 2, 3M ESPE (SB] and a universal system [Adper™ Single Bond Universal, 3M ESPE (SU]. Square-shaped specimens were prepared and assigned into 4 groups (n=5: SB and SU (control groups – no laser irradiation and SB-L and SU-L [SB and SU laser (L – irradiated groups]. DC was assessed using Fourier transform infrared spectroscopy with attenuated total reflectance. Additional uncured resin samples (≈3.0 µL, n=5 of each adhesive were also scanned for final DC calculation. For WS/WSB tests, similar specimens (n=10 were prepared and measured by monitoring the mass changes after dehydration/water storage cycles. For both tests, adhesive fluids were dropped into standardized Teflon molds (6.0×6.0×1.0 mm, irradiated with a 970-nm laser diode, and then polymerized with an LED-curing unit (1 W/cm2. Results Laser irradiation immediately before photopolymerization increased the DC (% of the tested adhesives: SB-L>SB>SU-L>SU. For WS/WSB (μg/mm3, only the dentin bonding system (DBS was a significant factor (pSU. Conclusion Irradiation with a laser diode improved the degree of conversion of all tested simplified dentin bonding systems, with no impact on water sorption and solubility.

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

Low work-function thermionic emission and orbital-motion-limited ion collection at bare-tether cathodic contact

Energy Technology Data Exchange (ETDEWEB)

Chen, Xin, E-mail: xin.chen@upm.es; Sanmartín, J. R., E-mail: juanr.sanmartin@upm.es [Departamento de Física Aplicada, Escuela Técnica Superior de Ingeniería Aeronáutica y del Espacio, Universidad Politécnica de Madrid, Plaza Cardenal Cisneros, 3, 28040 Madrid (Spain)

2015-05-15

With a thin coating of low-work-function material, thermionic emission in the cathodic segment of bare tethers might be much greater than orbital-motion-limited (OML) ion collection current. The space charge of the emitted electrons decreases the electric field that accelerates them outwards, and could even reverse it for high enough emission, producing a potential hollow. In this work, at the conditions of high bias and relatively low emission that make the potential monotonic, an asymptotic analysis is carried out, extending the OML ion-collection analysis to investigate the probe response due to electrons emitted by the negatively biased cylindrical probe. At given emission, the space charge effect from emitted electrons increases with decreasing magnitude of negative probe bias. Although emitted electrons present negligible space charge far away from the probe, their effect cannot be neglected in the global analysis for the sheath structure and two thin layers in between sheath and the quasineutral region. The space-charge-limited condition is located. It is found that thermionic emission increases the range of probe radius for OML validity and is greatly more effective than ion collection for cathodic contact of tethers.

Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector

Science.gov (United States)

Olawole, Olukunle C.; De, Dilip Kumar

2018-01-01

Thermionic energy conversion (TEC) using nanomaterials is an emerging field of research. It is known that graphene can withstand temperatures as high as 4600 K in vacuum, and it has been shown that its work function can be engineered from a high value (for monolayer/bilayer) of 4.6 eV to as low as 0.7 eV. Such attractive electronic properties (e.g., good electrical conductivity and high dielectric constant) make engineered graphene a good candidate as an emitter and collector in a thermionic energy converter for harnessing solar energy efficiently. We have used a modified Richardson-Dushman equation and have adopted a model where the collector temperature could be controlled through heat extraction in a calculated amount and a magnet can be attached on the back surface of the collector for future control of the space-charge effect. Our work shows that the efficiency of solar energy conversion also depends on power density falling on the emitter surface, and that a power conversion efficiency of graphene-based solar TEC as high as 55% can be easily achieved (in the absence of the space-charge effect) through proper choice of work functions, collector temperature, and emissivity of emitter surfaces. Such solar energy conversion would reduce our dependence on silicon solar panels and offers great potential for future renewable energy utilization.

Diode pumped solid state laser by two diodes

International Nuclear Information System (INIS)

Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

1995-01-01

A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

Ex vivo evaluation of super pulse diode laser system with smart temperature feedback for contact soft-tissue surgery

Science.gov (United States)

Yaroslavsky, Ilya; Boutoussov, Dmitri; Vybornov, Alexander; Perchuk, Igor; Meleshkevich, Val; Altshuler, Gregory

2018-02-01

Until recently, Laser Diodes (LD) have been limited in their ability to deliver high peak power levels, which, in turn, limited their clinical capabilities. New technological developments made possible advent of "super pulse" LD (SPLD). Moreover, advanced means of smart thermal feedback enable precise control of laser power, thus ensuring safe and optimally efficacious application. In this work, we have evaluated a prototype SPLD system ex vivo. The device provided up to 25 W average and up to 150 W pulse power at 940 nm wavelength. The laser was operated in the thermal feedback-controlled mode, where power of the laser was varied automatically as a function of real-time thermal feedback to maintain constant tip temperature. The system was also equipped with a fiber tip initiated with advanced TiO2 /tungsten technique. Evaluation methods were designed to assess: 1) Speed and depth of cutting; 2) Dimensions of coagulative margin. The SPLD system was compared with industry-leading conventional diode and CO2 devices. The results indicate that the SPLD system provides increase in speed of controlled cutting by a factor of >2 in comparison with the conventional diode laser and approaching that of CO2 device. The produced ratio of the depth of cut to the thermal damage margin was significantly higher than conventional diodes and close to that of the CO2 system, suggesting optimal hemostasis conditions. SPLD technology with real-time temperature control has a potential for creating a new standard of care in the field of precision soft tissue surgery.

Analysis of instability growth and collisionless relaxation in thermionic converters using 1-D PIC simulations

International Nuclear Information System (INIS)

Kreh, B.B.

1994-12-01

This work investigates the role that the beam-plasma instability may play in a thermionic converter. The traditional assumption of collisionally dominated relaxation is questioned, and the beam-plasma instability is proposed as a possible dominant relaxation mechanism. Theory is developed to describe the beam-plasma instability in the cold-plasma approximation, and the theory is tested with two common Particle-in-Cell (PIC) simulation codes. The theory is first confirmed using an unbounded plasma PIC simulation employing periodic boundary conditions, ES1. The theoretically predicted growth rates are on the order of the plasma frequencies, and ES1 simulations verify these predictions within the order of 1%. For typical conditions encountered in thermionic converters, the resulting growth period is on the order of 7 x 10 -11 seconds. The bounded plasma simulation PDP1 was used to evaluate the influence of finite geometry and the electrode boundaries. For this bounded plasma, a two-stream interaction was supported and resulting in nearly complete thermalization in approximately 5 x 10 -10 seconds. Since the electron-electron collision rate of 10 9 Hz and the electron atom collision rate of 10 7 Hz are significantly slower than the rate of development of these instabilities, the instabilities appear to be an important relaxation mechanism

Controlling Fringe Sensitivity of Electro-Optic Holography Systems Using Laser Diode Current Modulation

Science.gov (United States)

Bybee, Shannon J.

2001-01-01

Electro-Optic Holography (EOH) is a non-intrusive, laser-based, displacement measurement technique capable of static and dynamic displacement measurements. EOH is an optical interference technique in which fringe patterns that represent displacement contour maps are generated. At excessively large displacements the fringe density may be so great that individual fringes are not resolvable using typical EOH techniques. This thesis focuses on the development and implementation of a method for controlling the sensitivity of the EOH system. This method is known as Frequency Translated Electro-Optic Holography (FTEOH). It was determined that by modulating the current source of the laser diode at integer multiples of the object vibration, the fringe pattern is governed by higher order Bessel function of the first kind and the number of fringes that represent a given displacement can be controlled. The reduction of fringes is theoretically unlimited but physically limited by the frequency bandwidth of the signal generator, providing modulation to the laser diode. Although this research technique has been verified theoretically and experimentally in this thesis, due to the current laser diode capabilities it is a tedious and time consuming process to acquire data using the FTEOH technique.

[Signal analysis and spectrum distortion correction for tunable diode laser absorption spectroscopy system].

Science.gov (United States)

Bao, Wei-Yi; Zhu, Yong; Chen, Jun; Chen, Jun-Qing; Liang, Bo

2011-04-01

In the present paper, the signal of a tunable diode laser absorption spectroscopy (TDLAS) trace gas sensing system, which has a wavelength modulation with a wide range of modulation amplitudes, is studied based on Fourier analysis method. Theory explanation of spectrum distortion induced by laser intensity amplitude modulation is given. In order to rectify the spectrum distortion, a method of synchronous amplitude modulation suppression by a variable optical attenuator is proposed. To validate the method, an experimental setup is designed. Absorption spectrum measurement experiments on CO2 gas were carried out. The results show that the residual laser intensity modulation amplitude of the experimental system is reduced to -0.1% of its original value and the spectrum distortion improvement is 92% with the synchronous amplitude modulation suppression. The modulation amplitude of laser intensity can be effectively reduced and the spectrum distortion can be well corrected by using the given correction method and system. By using a variable optical attenuator in the TDLAS (tunable diode laser absorption spectroscopy) system, the dynamic range requirements of photoelectric detector, digital to analog converter, filters and other aspects of the TDLAS system are reduced. This spectrum distortion correction method can be used for online trace gas analyzing in process industry.

Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

Science.gov (United States)

Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

2017-06-01

N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

Conceptual engineering design study of thermionic topping of fossil power plants

Energy Technology Data Exchange (ETDEWEB)

1978-02-15

Primary objectives of this study are to investigate alternative design concepts of thermal coupling of thermionic energy converters (TECs) to the steam cycle and the mechanical and electrical aspects of integrating TEC design into the steam power station. The specific tasks include: (1) evaluate design concepts of TEC topping of solvent refined liquified coal-fired steam power plants, with main emphasis devoted to thermal, mechanical, and electrical design aspects. (2) Develop preliminary conceptual design of a modular TEC assembly. (3) Develop preliminary cost estimates of the design modification to a liquified coal-fired steam power plant with TEC topping. (4) Provide support to Thermo Electron Corporation in planning TEC hardware testing. Results are presented in detail.

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Portable Diode Laser Diagnostic System for Collaborative Research on Air-Breathing Combustion

National Research Council Canada - National Science Library

Hanson, Ronald

2003-01-01

This equipment grant focused on four areas: (1) portable diode laser sensors with new fiber-coupled diode lasers and the support equipment to provide higher power with extended wavelength tuning range and speed; (2...

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.

Science.gov (United States)

Shtepliuk, Ivan; Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

2016-01-01

A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium-graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I - V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

Directory of Open Access Journals (Sweden)

Ivan Shtepliuk

2016-11-01

Full Text Available A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

Tunable high-power narrow-linewidth green external-cavity GaN diode laser

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system.......A tunable high-power green external-cavity diode laser is demonstrated. Up to 290 mW output power and a 9.2 nm tuning is achieve. This constitutes the highest output power from a tunable green diode laser system....

Personal neutron diode dosemeter

International Nuclear Information System (INIS)

Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

1993-01-01

The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

Temperature issues with white laser diodes, calculation and approach for new packages

Science.gov (United States)

Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

2015-01-01

Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

Energy balance measurements for the determination of physical and technical operation parameters of thermionic converters

International Nuclear Information System (INIS)

Ritz, K.

1975-01-01

An introduction into the fundamental theoretical principles of the thermionic Cs converter is followed by the set-up of a special measuring converter as proposed by J. Bohdansky which permits the defined setting of the electrode distance under service conditions. Measurements thus carried out present quantitative data on efficiency, on energy transfer between the electrodes by means of radiation and heat transfer, and on the actual collector potential, the latter which surprisingly shows a distance dependency. (orig./GG) [de

Electromagnetic wave analogue of an electronic diode

International Nuclear Information System (INIS)

Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

2011-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

Photovoltaic power generation system free of bypass diodes

Science.gov (United States)

Lentine, Anthony L.; Okandan, Murat; Nielson, Gregory N.

2015-07-28

A photovoltaic power generation system that includes a solar panel that is free of bypass diodes is described herein. The solar panel includes a plurality of photovoltaic sub-modules, wherein at least two of photovoltaic sub-modules in the plurality of photovoltaic sub-modules are electrically connected in parallel. A photovoltaic sub-module includes a plurality of groups of electrically connected photovoltaic cells, wherein at least two of the groups are electrically connected in series. A photovoltaic group includes a plurality of strings of photovoltaic cells, wherein a string of photovoltaic cells comprises a plurality of photovoltaic cells electrically connected in series. The strings of photovoltaic cells are electrically connected in parallel, and the photovoltaic cells are microsystem-enabled photovoltaic cells.

Coaxial foilless diode

OpenAIRE

Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

2014-01-01

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

International Nuclear Information System (INIS)

Chand, Subhash; Kumar, Rajender

2014-01-01

Highlights: • The Ni/n-ZnO/p-Si/Al heterojunction diodes are fabricated by pulsed laser deposition. • The band gap of the deposit ZnO films was found to be 3.43 eV. • Forward I–V data of Ni/n-ZnO/p-Si/Al hetrojunction are interpreted in terms of thermionic emission–diffusion mechanism. • The C–V characteristics of the Ni/n-ZnO/p-Si/Al hetrojunction diode are measured in the temperature range 80–300 K. • The barrier height of Ni/n-ZnO/p-Si/Al hetrojunction diode is also calculated from C–V measurements. - Abstract: The ZnO thin films are grown on the p-Si for the heterojunction fabrication by pulsed laser deposition method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (0 0 2) plane as preferred direction. High purity vacuum evaporated nickel and aluminum metals were used to make contacts to the n-ZnO and p-Si, respectively. The current–voltage characteristics of Ni/n-ZnO/p-Si(1 0 0)/Al hetero structure measured over the temperature range 80–300 K have been studied on the basis of thermionic emission diffusion mechanism. The equivalent Schottky barrier height and diode ideality factor are determined by fitting of measured current–voltage data in to thermionic diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. These characteristics are attributed to the Gaussian distribution of barrier heights. The capacitance–voltage characteristics of Ni/n-ZnO/p-Si(1 0 0)/Al heterojunction diode are also studied over wide temperature range. From the measured capacitance–voltage data the built in voltage and impurity concentration in n-type ZnO is estimated

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

Responses and mechanisms of positive electron affinity molecules in the N2 mode of the thermionic ionization detector and the electron-capture detector

International Nuclear Information System (INIS)

Jones, C.S.

1989-01-01

Very little knowledge has been acquired in the past on the mechanistic pathway by which molecules respond in the N 2 mode of the thermionic ionization detector. An attempt is made here to elucidate the response mechanism of the detector. The basic response mechanisms are known for the electron capture detector, and an attempt is made to identify the certain mechanism by which selected molecules respond. The resonance electron capture rate constant has been believed to be temperature independent, and investigations of the temperature dependence of electron capture responses are presented. Mechanisms for the N 2 mode of the thermionic ionization detector have been proposed by examining the detector response to positive electron affinity molecules and by measurement of the ions produced by the detector. Electron capture mechanisms for selected molecules have been proposed by examining their temperature dependent responses in the electron capture detector and negative ion mass spectra of the samples. In studies of the resonance electron capture rate constant, the relative responses of selected positive electron affinity molecules and their temperature dependent responses were investigated. Positive electron affinity did not guarantee large responses in the N 2 mode thermionic ionization detector. High mass ions were measured following ionization of samples in the detector. Responses in the electron capture detector varied with temperature and electron affinity

High-temperature Schottky diode characteristics of bulk ZnO

Energy Technology Data Exchange (ETDEWEB)

Guer, Emre; Tuezemen, S; Kilic, Bayram; Coskun, C [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)

2007-05-16

Current-voltage (I-V) measurements of Ag/n-ZnO have been carried out at temperatures of 200-500 K in order to understand the temperature dependence of the diode characteristics. Forward-bias I-V analysis results in a Schottky barrier height of 0.82 eV and an ideality factor of 1.55 at room temperature. The barrier height of 0.74 eV and Richardson constant of 0.248 A K{sup -2} cm{sup -2} were also calculated from the Richardson plot, which shows nearly linear characteristics in the temperature range 240-440 K. From the nk{sub b}T/q versus k{sub b}T/q graph, where n is ideality factor, k{sub b} the Boltzmann constant, T the temperature and q the electronic charge we deduce that thermionic field emission (TFE) is dominant in the charge transport mechanism. At higher sample temperatures (>440 K), a trap-assisted tunnelling mechanism is proposed due to the existence of a deep donor situated at E{sub c}-0.62 eV with 3.3 x 10{sup -15} cm{sup 2} capture cross section observed by both deep-level transient spectroscopy (DLTS) and lnI{sub 0} versus 1/k{sub b}T plots. The ideality factor almost remains constant in the temperature range 240-400 K, which shows the stability of the Schottky contact in this temperature range.

Diode Laser Application in Soft Tissue Oral Surgery

Science.gov (United States)

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors

International Nuclear Information System (INIS)

Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns

2012-01-01

Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental

Compact laser-diode-based femtosecond sources

International Nuclear Information System (INIS)

Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

2004-01-01

This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

Diode laser (980nm) cartilage reshaping

Science.gov (United States)

El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

2011-03-01

Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

Performance evaluation and parametric optimum design of a vacuum thermionic solar cell

International Nuclear Information System (INIS)

Liao, Tianjun; Chen, Xiaohang; Chen, Jincan; Lin, Bihong

2016-01-01

A model of the vacuum thermionic solar cell (VTSC) consisting of a solar concentrator, an emitter, and a collector is proposed, in which the various heat losses including the far- and near-field thermal radiation are taken into account. Formula for the overall efficiency of the system is analytically derived. For given values of the ratio of the front surface area of the absorber to that of the emitter and the vacuum gap between the emitter and the collector, the operating temperatures of the emitter and collector are determined by solving the energy balance equations. The maximum efficiency of the VTSC are calculated for given values of the work functions of the emitter and collector materials, and some key parameters such as the net current density of the VTSC, operating temperatures of the emitter and collector, vacuum gap between the emitter and the collector, and area ratio of the absorber to the emitter are optimally determined. Furthermore, the effects of the work functions and the concentration ratio of the solar irradiation on the performance of the VTSC are discussed and several parametric selection criteria are obtained

Efficient thermal diode with ballistic spacer

Science.gov (United States)

Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

2018-03-01

Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

Hybrid daylight/light-emitting diode illumination system for indoor lighting.

Science.gov (United States)

Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

2014-03-20

A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

Science.gov (United States)

Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

2018-03-01

Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

I-V Characteristics of PtxCo1−x (x = 0.2, 0.5, and 0.7 Thin Films

Directory of Open Access Journals (Sweden)

M. Erkovan

2013-01-01

Full Text Available Three different chemical ratios of PtxCo1−x thin films were grown on p-type native oxide Si (100 by Magneto Sputtering System with cosputtering technique at 350°C temperature to investigate electrical prosperities. X-ray photoelectron spectroscopy analysis technique was used to specify chemical ratios of these films. The current-voltage (I-V measurements of metal-semiconductor (MS Schottky diodes were carried out at room temperature. From the I-V analysis of the samples, ideality factor (n, barrier height (ϕ, and contact resistance values were determined by using thermionic emission (TE theory. Some important parameters such as barrier height, ideality factor, and serial resistance were calculated from the I-V characteristics based on thermionic emission mechanism. The ideality factors of the samples were not much greater than unity, and the serial resistances of the samples were also very low.

Coaxial foilless diode

Energy Technology Data Exchange (ETDEWEB)

Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

2014-05-15

A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

Integrated power conditioning for laser diode arrays

International Nuclear Information System (INIS)

Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

1995-01-01

This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

Communication: Effects of thermionic-gun parameters on operating modes in ultrafast electron microscopy

Directory of Open Access Journals (Sweden)

Erik Kieft

2015-09-01

Full Text Available Ultrafast electron microscopes with thermionic guns and LaB6 sources can be operated in both the nanosecond, single-shot and femtosecond, single-electron modes. This has been demonstrated with conventional Wehnelt electrodes and absent any applied bias. Here, by conducting simulations using the General Particle Tracer code, we define the electron-gun parameter space within which various modes may be optimized. The properties of interest include electron collection efficiency, temporal and energy spreads, and effects of laser-pulse duration incident on the LaB6 source. We find that collection efficiencies can reach 100% for all modes, despite there being no bias applied to the electrode.

High-energy, high-repetition-rate picosecond pulses from a quasi-CW diode-pumped Nd:YAG system.

Science.gov (United States)

Noom, Daniel W E; Witte, Stefan; Morgenweg, Jonas; Altmann, Robert K; Eikema, Kjeld S E

2013-08-15

We report on a high-power quasi-CW pumped Nd:YAG laser system, producing 130 mJ, 64 ps pulses at 1064 nm wavelength with a repetition rate of 300 Hz. Pulses from a Nd:YVO(4) oscillator are first amplified by a regenerative amplifier to the millijoule level and then further amplified in quasi-CW diode-pumped Nd:YAG modules. Pulsed diode pumping enables a high gain at repetition rates of several hundred hertz, while keeping thermal effects manageable. Birefringence compensation and multiple thermal-lensing-compensated relay-imaging stages are used to maintain a top-hat beam profile. After frequency doubling, 75 mJ pulses are obtained at 532 nm. The intensity stability is better than 1.1%, which makes this laser an attractive pump source for a high-repetition-rate optical parametric amplification system.

Investigation into diode pumped modelocked Nd based laser oscillators for the CLIC-3 photoinjector system

NARCIS (Netherlands)

Valentine, G.J.; Burns, D.; Bente, E.A.J.M.; Berghmans, F.; Thienpont, H.; Danckaert, J.; Desmet, L.

2001-01-01

The photo-injector system envisaged for the proposed CLIC linear e+-e- accelerator at CERN has a demanding set of specifications on output pulse structure, power and timing stability. This paper reports on results obtained with quasi-CW diode pumped laser oscillators with output stabilisation. A

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

KAUST Repository

Lee, Changmin

2018-02-23

We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

Diode-pumped laser with improved pumping system

Science.gov (United States)

Chang, Jim J.

2004-03-09

A laser wherein pump radiation from laser diodes is delivered to a pump chamber and into the lasing medium by quasi-three-dimensional compound parabolic concentrator light channels. The light channels have reflective side walls with a curved surface and reflective end walls with a curved surface. A flow tube between the lasing medium and the light channel has a roughened surface.

Coaxial foilless diode

Directory of Open Access Journals (Sweden)

Long Kong

2014-05-01

Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-05-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

KAUST Repository

Al-Saggaf, Abeer

2015-01-01

The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

Comparison between arc drops in ignited thermionic converters with and without ion reflections at the emitter

International Nuclear Information System (INIS)

Lundgren, L.

1985-01-01

The output performance of two thermionic energy converters is compared. One converter has a normal emitter, working with zero field at the emitter which is close to the optimum working point, and the other has a low work function emitter and ion reflection at the emitter. A simple model of the plasma and the sheaths shows that a converter working with a low work function emitter and ion reflections gives a worse performance than a similar converter with a normal emitter

Simulations of Large-Area Electron Beam Diodes

Science.gov (United States)

Swanekamp, S. B.; Friedman, M.; Ludeking, L.; Smithe, D.; Obenschain, S. P.

1999-11-01

Large area electron beam diodes are typically used to pump the amplifiers of KrF lasers. Simulations of large-area electron beam diodes using the particle-in-cell code MAGIC3D have shown the electron flow in the diode to be unstable. Since this instability can potentially produce a non-uniform current and energy distribution in the hibachi structure and lasing medium it can be detrimental to laser efficiency. These results are similar to simulations performed using the ISIS code.(M.E. Jones and V.A. Thomas, Proceedings of the 8^th) International Conference on High-Power Particle Beams, 665 (1990). We have identified the instability as the so called ``transit-time" instability(C.K. Birdsall and W.B. Bridges, Electrodynamics of Diode Regions), (Academic Press, New York, 1966).^,(T.M. Antonsen, W.H. Miner, E. Ott, and A.T. Drobot, Phys. Fluids 27), 1257 (1984). and have investigated the role of the applied magnetic field and diode geometry. Experiments are underway to characterize the instability on the Nike KrF laser system and will be compared to simulation. Also some possible ways to mitigate the instability will be presented.

Impact of the use of low or medium enriched uranium on the masses of space nuclear reactor power systems

International Nuclear Information System (INIS)

1994-12-01

The design process for determining the mass increase for the substitution of low-enriched uranium (LEU) for high-enriched uranium (HEU) in space nuclear reactor systems is an optimization process which must simultaneously consider several variables. This process becomes more complex whenever the reactor core operates on an in-core thermionic power conversion, in which the fissioning of the nuclear fuel is used to directly heat thermionic emitters, with the subsequent elimination of external power conversion equipment. The increased complexity of the optimization process for this type of system is reflected in the work reported herein, where considerably more information has been developed for the moderated in-core thermionic reactors

Development of a thermionic magnicon amplifier at 11.4 GHz

International Nuclear Information System (INIS)

Gold, S.H.; Hafizi, B.; Fliflet, A.W.; Kinkead, A.K.; True, R.

1997-01-01

The magnicon is a scanning-beam microwave amplifier tube that is being developed as an rf source for the proposed TeV Next Linear Collider. In it, a solid electron beam is spun up to high transverse momentum in a series of deflection cavities containing synchronously rotating TM modes, and then spun down again in an output cavity whose mode is synchronous with that of the deflection cavities. A recent magnicon experiment at NRL, using a ∼ 650 kV, 225 A, 5.5-mm-diam. electron beam produced from a cold cathode driven by a single-shot Marx generator, demonstrated 14 MW (±3 dB) at 11.12 GHz with 105 efficiency in the synchronous magnicon mode, but was limited by plasma loading in the deflection cavities to a regime in which the last cavity of the deflection system (the penultimate cavity) was unstable. A new 11.4 GHz rep-rated thermionic magnicon experiment is being assembled, using an advanced ultra-high-convergence electron gun driven by a 10 Hz, 1.5 microsecond modulator top produce a 500 kV, 210 A, 2-mm diameter electron beam. The magnicon circuit has been optimized for minimum surface rf fields and maximum efficiency, and will be engineered for high temperature bakeout and high vacuum operation. This experiment should begin operation in the Summer of 1997. The predicted power is 60 MW at ∼ 60% efficiency

High Power Diode Lasers with External Feedback: Overview and Prospects

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2012-01-01

In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

High Power High Efficiency Diode Laser Stack for Processing

Science.gov (United States)

Gu, Yuanyuan; Lu, Hui; Fu, Yueming; Cui, Yan

2018-03-01

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As diode laser is simple in structure, small size, longer life expectancy with the advantages of low prices, it is widely used in the industry processing, such as heat treating, welding, hardening, cladding and so on. Respectively, diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. At this power level, it can have many important applications, such as surgery, welding of polymers, soldering, coatings and surface treatment of metals. But there are some applications, which require much higher power and brightness, e.g. hardening, key hole welding, cutting and metal welding. In addition, High power diode lasers in the military field also have important applications. So all developed countries have attached great importance to high-power diode laser system and its applications. This is mainly due their low performance. In this paper we will introduce the structure and the principle of the high power diode stack.

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Science.gov (United States)

Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

2018-01-01

β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

Characterization of the inhomogeneous barrier distribution in a Pt/(100β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Directory of Open Access Journals (Sweden)

Guangzhong Jian

2018-01-01

Full Text Available β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current–voltage and capacitance–voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A·cm−2·K−2, which is close to the theoretical value of 41.11 A·cm−2·K−2. The differences between the barrier heights determined using the capacitance–voltage and current–voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

High temperature semiconductor diode laser pumps for high energy laser applications

Science.gov (United States)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Generation of multi-branch beam with thermionic gun for the Japan linear collider

International Nuclear Information System (INIS)

Naito, T.; Akemoto, M.; Matsumonto, H.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

1992-01-01

We report on the development of a thermionic gun that is capable of producing multi-bunch beam to be used at the KEK Accelerator Test Facility for the Japan Linear Collider project. Two types of grid pulse generators have been developed. One is an avalanche pulse generator. A Y-646E cathode was successfully operated to generate double-bunch beam with a pulse width shorter than 700 ps, bunch spacing 1.4 ns, and a peak current 4.3 A. The other grid pulse generator is a fast ECL circuit with an RF power amplifier. Generation of 20-pulse trains with 2.1 ns time spacing has been demonstrated. (Author) 4 refs., 6 figs

Usability of light-emitting diodes in precision approach path indicator systems by individuals with marginal color vision.

Science.gov (United States)

2014-05-01

To save energy, the FAA is planning to convert from incandescent lights to light-emitting diodes (LEDs) in : precision approach path indicator (PAPI) systems. Preliminary work on the usability of LEDs by color vision-waivered pilots (Bullough, Skinne...

High brightness K+ ion source for heavy ion fusion linear induction accelerators

International Nuclear Information System (INIS)

Henestroza, E.; Eylon, S.; Chupp, W.; Rutkowski, H.

1992-01-01

Low emittance, high current, singly charged potassium thermionic ion sources are being developed for the Induction Linac System Experiment injector, ILSE. The ILSE, now in study at LBL, will address the physics issues of particle beams in a heavy ion fusion driver scenario. The K + ion beam considered is emitted thermionically into a diode gap from alumino-silicate layers (zeolite) coated on a porous tungsten cup. The Single Beam Transport Experiment (SBTE) 120keV cesium source was redesigned and modified with the aid of an ion optics and gun design program (EGUN) to enable the evaluation of the K + source performance at high extraction currents of about 80mA from a one inch diameter source. The authors report on the source fabrication technique and performance, including total current and current density profile measurements using Faraday cups, phase space distributions using the double slit scanning technique, and source emitting surface temperature dependence on heating power using a wire pyrometer

Wideband 4-diode sampling circuit

Science.gov (United States)

Wojtulewicz, Andrzej; Radtke, Maciej

2016-09-01

The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

Development and optimization of a diode laser for photodynamic therapy.

Science.gov (United States)

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Observation of Repetition-Rate Dependent Emission From an Un-Gated Thermionic Cathode Rf Gun

Energy Technology Data Exchange (ETDEWEB)

Edelen, J. P.; Sun, Y.; Harris, J.R.; Lewellen, J.W.

2017-06-02

Recent work at Fermilab in collaboration with the Advanced Photon Source and members of other national labs, designed an experiment to study the relationship between the RF repetition rate and the average current per RF pulse. While existing models anticipate a direct relationship between these two parameters we observed an inverse relationship. We believe this is a result of damage to the barium coating on the cathode surface caused by a change in back-bombardment power that is unaccounted for in the existing theories. These observations shed new light on the challenges and fundamental limitations associated with scaling an ungated thermionic cathode RF gun to high average current.

X-ray Diffraction Studies of the Structure and Thermochemistry of Alkaline-Earth Oxide-Coated Thermionic Cathodes

Science.gov (United States)

Karikari, E. K.; Bassey, E.; Wintucky, Edwin G.

1998-01-01

NASA LeRC has a broad, active cathode technology development program in which both experimental and theoretical studies are being employed to further development of thermionic cathodes for use as electron sources in vacuum devices for communications and other space applications. One important type of thermionic cathode under development is the alkaline-earth oxide-coated (BaO, SrO, CaO) cathode. Significant improvements in the emission characteristics of this cathode have been obtained through modification of the chemical composition and morphology of the oxide coating, with the best result thus far coming from the addition of In2O3 and Sc2O3. Whereas the In2O3 produces a finer, more uniform particle structure, the exact chemical state and role of the Sc2O3 in the emission enhancement is unknown. The purpose of this cooperative agreement is to combine the studies of the surface chemistry and electron emission at NASA LeRC of chemically modified oxide coatings with a study of the thermochemistry and crystal structure using X-ray diffraction equipment and expertise at Clark Atlanta University (CAU). The study at CAU is intended to provide the description and understanding of the structure and thermochemistry needed for further improvement and optimization of the modified coatings. A description of the experimental procedure, preliminary X-ray diffraction test results, together with the design of an ultrahigh vacuum chamber necessary for high temperature thermochemistry studies will be presented.

Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

Energy Technology Data Exchange (ETDEWEB)

Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

2012-05-15

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

In vivo dosimetry with silicon diodes in total body irradiation

International Nuclear Information System (INIS)

Oliveira, F.F.; Amaral, L.L.; Costa, A.M.; Netto, T.G.

2014-01-01

The aim of this work is the characterization and application of silicon diode detectors for in vivo dosimetry in total body irradiation (TBI) treatments. It was evaluated the diode response with temperature, dose rate, gantry angulations and field size. A maximum response variation of 2.2% was obtained for temperature dependence. The response variation for dose rate and angular was within 1.2%. For field size dependence, the detector response increased with field until reach a saturation region, where no more primary radiation beam contributes for dose. The calibration was performed in a TBI setup. Different lateral thicknesses from one patient were simulated and then the calibration factors were determined by means of maximum depth dose readings. Subsequent to calibration, in vivo dosimetry measurements were performed. The response difference between diode readings and the prescribed dose for all treatments was below 4%. This difference is in agreement as recommended by the International Commission on Radiation Units and Measurements (ICRU), which is ±5%. The present work to test the applicability of a silicon diode dosimetry system for performing in vivo dose measurements in TBI techniques presented good results. These measurements demonstrated the value of diode dosimetry as a treatment verification method and its applicability as a part of a quality assurance program in TBI treatments. - Highlights: ► Characterization of a silicon diode dosimetry system. ► Application of the diodes for in vivo dosimetry in total body irradiation treatments. ► Implementation of in vivo dosimetry as a part of a quality assurance program in radiotherapy

Optimization of light quality from color mixing light-emitting diode systems for general lighting

DEFF Research Database (Denmark)

Thorseth, Anders

2012-01-01

are simulated using radiometrically measured single LED spectra. The method uses electrical input powers as input parameters and optimizes the resulting spectral power distribution with regard to color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal......To address the problem of spectral light quality from color mixing light-emitting diode systems, a method for optimizing the spectral output of multicolor LED system with regards to standardized quality parameters has been developed. The composite spectral power distribution from the LEDs...

Light-Emitting Diode-Based Illumination System for In Vitro Photodynamic Therapy

Directory of Open Access Journals (Sweden)

Defu Chen

2012-01-01

Full Text Available The aim of this study is to develop a light-emitting diode- (LED- based illumination system that can be used as an alternative light source for in vitro photodynamic therapy (PDT. This illumination system includes a red LED array composed of 70 LEDs centered at 643 nm, an air-cooling unit, and a specific-designed case. The irradiance as a function of the irradiation distance between the LED array and the sample, the homogeneity and stability of irradiation, and the effect of long-time irradiation on culture medium temperature were characterized. Furthermore, the survival rate of the CNE1 cells that sensitized with 5-aminolevulinic acid after PDT treatment was evaluated to demonstrate the efficiency of the new LED-based illumination system. The obtained results show that the LED-based illumination system is a promising light source for in vitro PDT that performed in standard multiwell plate.

Iodine-stabilized single-frequency green InGaN diode laser.

Science.gov (United States)

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Refractive index gradient diagnostics: analysis of different optical systems and application to COBRA ion diode

Energy Technology Data Exchange (ETDEWEB)

Knyazev, B A; Greenly, J B; Hammer, D A; Krastelev, E G [Cornell Univ., Ithaca, NY (United States). Laboratory of Plasma Studies; Cuneo, M E [Sandia National Laboratories, Albuquerque, NM (United States)

1997-12-31

Different optical system variations for refractive index gradient diagnostics with a laser beam probe have been analyzed. A `three-telescope` optical system which permits simultaneous measurement of both the laser beam centroid deflection by a bi-cell photodiode and the spatial Fourier spectrum of the deflected beam by a streak camera has been implemented on the COBRA ion diode. The dynamics of the anode plasma layer was studied with these techniques. (author). 3 figs., 8 refs.

Neutron activation system for spectral measurements of pulsed ion diode neutron production

International Nuclear Information System (INIS)

Hanson, D.L.; Kruse, L.W.

1980-02-01

A neutron energy spectrometer has been developed to study intense ion beam-target interactions in the harsh radiation environment of a relativistic electron beam source. The main component is a neutron threshold activation system employing two multiplexed high efficiency Ge(Li) detectors, an annihilation gamma coincidence system, and a pneumatic sample transport. Additional constraints on the neutron spectrum are provided by total neutron yield and time-of-flight measurements. A practical lower limit on the total neutron yield into 4π required for a spectral measurement with this system is approx. 10 10 n where the neutron yield is predominantly below 4 MeV and approx. 10 8 n when a significant fraction of the yield is above 4 MeV. Applications of this system to pulsed ion diode neutron production experiments on Hermes II are described

Spin-Wave Diode

Directory of Open Access Journals (Sweden)

Jin Lan (兰金

2015-12-01

Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

A digital frequency stabilization system of external cavity diode laser based on LabVIEW FPGA

Science.gov (United States)

Liu, Zhuohuan; Hu, Zhaohui; Qi, Lu; Wang, Tao

2015-10-01

Frequency stabilization for external cavity diode laser has played an important role in physics research. Many laser frequency locking solutions have been proposed by researchers. Traditionally, the locking process was accomplished by analog system, which has fast feedback control response speed. However, analog system is susceptible to the effects of environment. In order to improve the automation level and reliability of the frequency stabilization system, we take a grating-feedback external cavity diode laser as the laser source and set up a digital frequency stabilization system based on National Instrument's FPGA (NI FPGA). The system consists of a saturated absorption frequency stabilization of beam path, a differential photoelectric detector, a NI FPGA board and a host computer. Many functions, such as piezoelectric transducer (PZT) sweeping, atomic saturation absorption signal acquisition, signal peak identification, error signal obtaining and laser PZT voltage feedback controlling, are totally completed by LabVIEW FPGA program. Compared with the analog system, the system built by the logic gate circuits, performs stable and reliable. User interface programmed by LabVIEW is friendly. Besides, benefited from the characteristics of reconfiguration, the LabVIEW program is good at transplanting in other NI FPGA boards. Most of all, the system periodically checks the error signal. Once the abnormal error signal is detected, FPGA will restart frequency stabilization process without manual control. Through detecting the fluctuation of error signal of the atomic saturation absorption spectrum line in the frequency locking state, we can infer that the laser frequency stability can reach 1MHz.

Diode-rectified multiphase AC arc for the improvement of electrode erosion characteristics

Science.gov (United States)

Tanaka, Manabu; Hashizume, Taro; Saga, Koki; Matsuura, Tsugio; Watanabe, Takayuki

2017-11-01

An innovative multiphase AC arc (MPA) system was developed on the basis of a diode-rectification technique to improve electrode erosion characteristics. Conventionally, electrode erosion in AC arc is severer than that in DC arc. This originated from the fact that the required properties for the cathode and anode are different, although an AC electrode works as the cathode and the anode periodically. To solve this problem, a separation of AC electrodes into pairs of thoriated tungsten cathode and copper anode by diode-rectification was attempted. A diode-rectified multiphase AC arc (DRMPA) system was then successfully established, resulting in a drastic improvement of the erosion characteristics. The electrode erosion rate in the DRMPA was less than one-third of that in the conventional MPA without the diode rectification. In order to clarify its erosion mechanism, electrode phenomena during discharge were visualized by a high-speed camera system with appropriate band-pass filters. Fluctuation characteristics of the electrode temperature in the DRMPA were revealed.

Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System

DEFF Research Database (Denmark)

Berg, Alexander; Yazdi, Sadegh; Nowzari, Ali

2016-01-01

layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy......Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active...... dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum....

The effects of spots (or grains) and the mean work function of a polycrystalline emitter

International Nuclear Information System (INIS)

Devin, B.; Phuc Nguyen, Xuan

1964-01-01

The direct conversion of thermal energy at high temperature to electrical energy using plasma diodes is studied in the Electronic Physics Service of the French Atomic Energy Commission. Research concerns the adaptation of these diodes to nuclear reactors with a view especially to providing power for operating the instruments of space vehicles. In parallel with the semi-industrial realizations and tests, an important part of the activity of the service is directed towards fundamental research into physical phenomena convected with thermionic emission with a view to improving present performances. (authors) [fr

Photovoltaic power generation system with photovoltaic cells as bypass diodes

Science.gov (United States)

Lentine, Anthony L.; Nielson, Gregory N.; Tauke-Pedretti, Anna; Cruz-Campa, Jose Luis; Okandan, Murat

2017-11-28

A photovoltaic power generation system that includes a solar panel is described herein. The solar panel includes a photovoltaic sub-module, which includes a group of microsystem enabled photovoltaic cells. The group includes a first string of photovoltaic cells, a second string of photovoltaic cells, and a differing photovoltaic cell. Photovoltaic cells in the first string are electrically connected in series, and photovoltaic cells in the second string are electrically connected in series. Further, the first string of photovoltaic cells, the second string of photovoltaic cells, and the differing photovoltaic cell are electrically connected in parallel. Moreover, the differing photovoltaic cell is used as a bypass diode for the first string of photovoltaic cells and the second string of photovoltaic cells.

Research on the electrical characteristics of the Pt/CdS Schottky diode

Science.gov (United States)

Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

2013-08-01

With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

Green high-power tunable external-cavity GaN diode laser at 515 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Measuring current emission and work functions of large thermionic cathodes

International Nuclear Information System (INIS)

Fortgang, C.M.

2001-01-01

As one component of the nations Stockpile Stewardship program, Los Alamos National Laboratory is constructing a 20 MeV, 2 kA (with a 4 kA upgrade capability), 3ps induction linac for doing x-ray radiography of explosive devices. The linac is one leg of a facility called the Dual-Axis Radiography Hydrodynamic Test Facility (DARHT). The electron gun is designed to operate at 3.2 MV. The gun is a Pierce type design and uses a 6.5' cathode for 2 kA operation and an 8' cathode for 4 kA operation. We have constructed a small facility called the Cathode Test Stand (CTS) to investigate engineering and physics issues regarding large thermionic dispenser-cathodes. In particular, we have looked at the issues of temperature uniformity on the cathode surface and cathode quality as measured by its work function. We have done thermal imaging of both 8' and 6.5' cathodes. Here we report on measurements of the cathode work function, both the average value and how it vanes across the face of the cathode.

The outlook for application of powerful nuclear thermionic reactor -powered space electric jet propulsion engines

International Nuclear Information System (INIS)

Semyonov, Y.P.; Bakanov, Y.A.; Synyavsky, V.V.; Yuditsky, V.D.

1997-01-01

This paper summarizes main study results for application of powerful space electric jet propulsion unit (EJPUs) which is powered by Nuclear Thermionic Power Unit (NTPU). They are combined in Nuclear Power/Propulsion Unit (NPPU) which serves as means of spacecraft equipment power supply and spacecraft movement. Problems the paper deals with are the following: information satellites delivery and their on-orbit power supply during 10-15 years, removal of especially hazardous nuclear wastes, mining of asteroid resources and others. Evaluations on power/time/mass relationship for this type of mission are given. EJPU parameters are compatible with Russian existent or being under development launch vehicle. (author)

The collision cross sections for excitation energy transfer in Rb*(5P3/2)+K(4S1/2)→Rb(5S1/2)+K*(4PJ) processes

International Nuclear Information System (INIS)

Horvatic, V.; Vadla, C.; Movre, M.

1993-01-01

The collisional excitation transfer for the processes Rb * (5P 3/2 ) + K(4S 1/2 ) → Rb(5S 1/2 ) + K * (4P J ), J = 1/2, 3/2, was investigated using two-photon laser excitation techniques with a thermionic heat-pipe diode as a detector. The population densities of the K 4P J levels induced by collisions with excited Rb atoms as well as those produced by direct laser excitation of the potassium atoms were probed through the measurement of the thermionic signals generated due to the ionization of the potassium atoms emerging from the K(4P J ) → K(7S 1/2 ) excitation channel. (orig./WL)

Design of laser diode driver with constant current and temperature control system

Science.gov (United States)

Wang, Ming-cai; Yang, Kai-yong; Wang, Zhi-guo; Fan, Zhen-fang

2017-10-01

A laser Diode (LD) driver with constant current and temperature control system is designed according to the LD working characteristics. We deeply researched the protection circuit and temperature control circuit based on thermos-electric cooler(TEC) cooling circuit and PID algorithm. The driver could realize constant current output and achieve stable temperature control of LD. Real-time feedback control method was adopted in the temperature control system to make LD work on its best temperature point. The output power variety and output wavelength shift of LD caused by current and temperature instability were decreased. Furthermore, the driving current and working temperature is adjustable according to specific requirements. The experiment result showed that the developed LD driver meets the characteristics of LD.

A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

Science.gov (United States)

Morris, J. F.; Merrill, O. S.; Reddy, H. K.

1981-01-01

Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

Science.gov (United States)

Morris, J. F.; Merrill, O. S.; Reddy, H. K.

Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

Mis-diode as a low-energy X- and γ-ray spectrometer

International Nuclear Information System (INIS)

Konova, A.

1980-01-01

Considered are main peculiarities of apparata called MIS-diods having metal-thin isolating semiconductor structure and used as detectors of low-energy gamma and X-ray radiation. Discussed are advantages of tunnel MIS-diods based on non-primitive carriers. Presented are results of experimental measurements carried out using system of metal-silion oxide-silicon with the oxide layer width of 10-25 A (silicon with acceptor concentration of 10 19 m -3 ). Data presented show that MIS-diods can be considered as diods with p-n - transition in which n + - region is an inversion layer near the semiconductor surface, and further a leant region is situated. When voltage is applied only the depth of the leant region changes. In case of high quality diods the leakage currents are very small. Results of the investigation performed show that MIS-diods with oxide film wiolth of 10-22 A (the film covering p-silicon with high specific resistance) can be used as spectrometers of low-energy photons having particularly high energetic solution at room temperature. An advantage of new diods is the reverse current significantly lower in comparison with that of usual detectors with the Schottky barrier

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Effect of the electric field during annealing of organic light emitting diodes for improving its on/off ratio.

Science.gov (United States)

Sharma, Rahul K; Katiyar, Monica; Rao, I V Kameshwar; Unni, K N Narayanan; Deepak

2016-01-28

If an organic light emitting diode is to be used as part of a matrix addressed array, it should exhibit low reverse leakage current. In this paper we present a method to improve the on/off ratio of such a diode by simultaneous application of heat and electric field post device fabrication. A green OLED with excellent current efficiency was seen to be suffering from a poor on/off ratio of 10(2). After examining several combinations of annealing along with the application of a reverse bias voltage, the on/off ratio of the same device could be increased by three orders of magnitude, specifically when the device was annealed at 80 °C under reverse bias (-15 V) followed by slow cooling also under the same bias. Simultaneously, the forward characteristics of the device were relatively unaffected. The reverse leakage in the OLED is mainly due to the injection of minority carriers in the hole transport layer (HTL) and the electron transport layer (ETL), in this case, of holes in tris-(8-hydroxyquinoline)aluminum(Alq3) and electrons in 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA). Hence, to investigate these layers adjacent to the electrodes, we fabricated their single layer devices. The possibility of bulk traps present adjacent to electrodes providing states for injection was ruled out after estimating the trap density both before and after the reverse biased annealing. The temperature independent current in reverse bias ruled out the possibility of thermionic injection. The origin of the reverse bias current is attributed to the availability of interfacial hole levels in Alq3 at the cathode work function level in the as-fabricated device; the suppression of the same being attributed to the fact that these levels in Alq3 are partly removed after annealing under an electric field.

Thermal diode made by nematic liquid crystal

Energy Technology Data Exchange (ETDEWEB)

Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

2016-09-07

This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

Science.gov (United States)

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Laser source for dimensional metrology: investigation of an iodine stabilized system based on narrow linewidth 633 nm DBR diode

Science.gov (United States)

Rerucha, Simon; Yacoot, Andrew; Pham, Tuan M.; Cizek, Martin; Hucl, Vaclav; Lazar, Josef; Cip, Ondrej

2017-04-01

We demonstrated that an iodine stabilized distributed Bragg reflector (DBR) diode based laser system lasing at a wavelength in close proximity to λ =633 nm could be used as an alternative laser source to the helium-neon lasers in both scientific and industrial metrology. This yields additional advantages besides the optical frequency stability and coherence: inherent traceability, wider optical frequency tuning range, higher output power and high frequency modulation capability. We experimentally investigated the characteristics of the laser source in two major steps: first using a wavelength meter referenced to a frequency comb controlled with a hydrogen maser and then on an interferometric optical bench testbed where we compared the performance of the laser system with that of a traditional frequency stabilized He-Ne laser. The results indicate that DBR diode laser system provides a good laser source for applications in dimensional (nano)metrology, especially in conjunction with novel interferometric detection methods exploiting high frequency modulation or multiaxis measurement systems.

Gamma and electron high dose dosimetry with rad-hard Si diodes

International Nuclear Information System (INIS)

Pascoalino, Kelly Cristina da Silva

2014-01-01

In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ( 60 Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that the

Disruptive laser diode source for embedded LIDAR sensors

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

Diode-pumped, single frequency Nd:YLF laser for 60-beam OMEGA laser pulse-shaping system

International Nuclear Information System (INIS)

Okishev, A.V.; Seka, W.

1997-01-01

The operational conditions of the OMEGA pulse-shaping system require an extremely reliable and low-maintenance master oscillator. The authors have developed a diode-pumped, single-frequency, pulsed Nd:YLF laser for this application. The laser generates Q-switched pulses of ∼160-ns duration and ∼10-microJ energy content at the 1,053-nm wavelength with low amplitude fluctuations (<0.6% rms) and low temporal jitter (<7 ns rms). Amplitude and frequency feedback stabilization systems have been used for high long-term amplitude and frequency stability

Electric strength of metal-ceramic brazed units of thermionic energy converters in cesium vapours

International Nuclear Information System (INIS)

Belousenko, A.P.; Vasilchenko, A.V.; Nikolaev, Y.V.

1989-01-01

The investigation of electric strength characteristics of the hollow metal-ceramic brazed units of thermionic energy converters with the insulator 1 = 10-50 mm from polycrystal aluminum oxide at the temperature T = 450-750 degrees and the cesium vapour pressure P Cs = 10 - 1 -10 3 Pa has been carried out. The experimental dependencies of the break-down voltage of the brazed units on the temperature, parameter P Cs · 1 and the value of surface electric resistance of the insulators are given as well as the empiric equations obtained with the help of experimental data for calculating the break-down voltage. A mechanism of ceramic insulator influence on electric strength characteristics of the cesium gap is investigated. A breakdown model explaining this influence is proposed

Pseudo-diode based on protonic/electronic hybrid oxide transistor

Science.gov (United States)

Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

2018-01-01

Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

Radiation monitoring with CVD diamonds and PIN diodes at BaBar

Energy Technology Data Exchange (ETDEWEB)

Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

2007-12-11

The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

Intensity Noise Transfer Through a Diode-pumped Titanium Sapphire Laser System

DEFF Research Database (Denmark)

Tawfieq, Mahmoud; Hansen, Anders Kragh; Jensen, Ole Bjarlin

2017-01-01

higher RIN than a setup with only a single nonlinear crystal. The Ti:S is shown to have a cut-off frequency around 500 kHz, which means that noise structures of the pump laser above this frequency are strongly suppressed. Finally, the majority of the Ti:S noise seems to originate from the laser itself......In this paper, we investigate the noise performance and transfer in a titanium sapphire (Ti:S) laser system. This system consists of a DBR tapered diode laser, which is frequency doubled in two cascaded nonlinear crystals and used to pump the Ti:S laser oscillator. This investigation includes...... electrical noise characterizations of the utilized power supplies, the optical noise of the fundamental light, the second harmonic light, and finally the optical noise of the femtosecond pulses emitted by the Ti:S laser. Noise features originating from the electric power supply are evident throughout...

Computer-assisted experiments with a laser diode

Energy Technology Data Exchange (ETDEWEB)

Kraftmakher, Yaakov, E-mail: krafty@mail.biu.ac.il [Department of Physics, Bar-Ilan University, Ramat-Gan 52900 (Israel)

2011-05-15

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10{sup 7} Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Computer-assisted experiments with a laser diode

International Nuclear Information System (INIS)

Kraftmakher, Yaakov

2011-01-01

A laser diode from an inexpensive laser pen (laser pointer) is used in simple experiments. The radiant output power and efficiency of the laser are measured, and polarization of the light beam is shown. The h/e ratio is available from the threshold of spontaneous emission. The lasing threshold is found using several methods. With a data-acquisition system, the measurements are possible in a short time. The frequency response of the laser diode is determined in the range 10-10 7 Hz. The experiments are suitable for undergraduate laboratories and for classroom demonstrations on semiconductors.

Equilibrium double layers in extended Pierce diodes

International Nuclear Information System (INIS)

Ciubotariu-Jassy, C.I.

1992-01-01

The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

Tunable diode-pumped-LNA laser

International Nuclear Information System (INIS)

Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

1987-01-01

Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

Science.gov (United States)

Jin, Haoming; Hebard, Arthur

Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

Energy Technology Data Exchange (ETDEWEB)

Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

2000-04-01

Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

Science.gov (United States)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Thermographic and spectrophotometric analysis of the extrinsic tooth bleaching using a diode laser and a LED system. In vitro

International Nuclear Information System (INIS)

Micheli, Paola Racy de

2004-01-01

The aim of this study was to evaluate the intra-pulpal temperature change, as well as to compare the bleaching power of a 38% hydrogen peroxide (Opalescence Xtra Boost- Ultradent. Inc), when activated with a diode laser, with a LED system and without activation, in the extrinsic tooth bleaching in vitro. Ten mandibular human incisors, a thermocouple, 45 bovine incisors and a spectrophotometer (Shade Eye- Shofu) for the color analysis. The samples were divided into 3 groups: 38% hydrogen peroxide activated by a diode laser (ZAP lasers, wavelength 808 nm ± 5, power of 1,4 W); 38% hydrogen peroxide activated by LED (Bright LEC-Mmoptics, wavelength 470 nm ± 25, power of 380 mW); 38% hydrogen peroxide without activation. After the artificial pigmentation, the bleaching agent acted for the same time in the 3 groups, differing only by the type of activation. The results of temperature showed that the LED activation was safer than the diode laser, which, in some measures exceeded the limit of 5.6 deg C. The luminosity of the samples did not show significantly statistics differences in none of the groups and moments of this study. The diode laser and LED activation did not influenced at the bleaching power of the peroxide, which showed effective for removing stains, with great capacity of bleaching bovine tooth artificially darkened. (author)

Magnetically insulated H- diodes

International Nuclear Information System (INIS)

Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

1993-01-01

At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

Narrow-line external cavity diode laser micro-packaging in the NIR and MIR spectral range

Science.gov (United States)

Jiménez, A.; Milde, T.; Staacke, N.; Aßmann, C.; Carpintero, G.; Sacher, J.

2017-07-01

Narrow-linewidth tunable diode lasers are an important tool for spectroscopic instrumentation. Conventional external cavity diode lasers offer high output power and narrow linewidth. However, most external cavity diode lasers are designed as laboratory instrument and do not allow portability. In comparison, other commonly used lasers, like distributed feedback lasers (DFB) that are capable of driving a handheld device, are limited in power and show linewidths which are not sufficiently narrow for certain applications. We present new miniaturized types of tunable external cavity diode laser which overcome the drawbacks of conventional external cavity diode lasers and which preserve the advantages of this laser concept. Three different configurations are discussed in this article. The three types of miniaturized external cavity diode laser systems achieve power values of more than 50 mW within the 1.4 μm water vapor absorption band with excellent side-mode suppression and linewidth below 100 kHz. Typical features outstand with respect to other type of laser systems which are of extended use such as DFB laser diodes. The higher output power and the lower linewidth will enable a higher sensitivity and resolution for a wide range of applications.

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Modeling transient thermal hydraulic behavior of a thermionic fuel element for nuclear space reactors

International Nuclear Information System (INIS)

Al-Kheliewi, A.S.; Klein, A.C.

1994-01-01

A transient code (TFETC) for determining the temperature distribution throughout the radial and axial positions of a thermionic fuel element (TFE) during changes in operating conditions has been successfully developed and tested. A fully implicit method is used to solve the system of equations for temperatures at each time step. Presently, TFETC has the ability to handle the following transients: startup, loss of flow accidents, and shutdown. The code has been applied to the startup of the ATI single cell configuration which appears to start up and shut down in an orderly and reasonable fashion. No unexpected transient features were observed. The TFE also appears to function robustly under loss of flow accident conditions. It appears hat sufficient time is available to shut the reactor down safely without melting point the fuel. The model shows that during a complete loss of flow accident (without shutdown) the coolant reaches its boiling point in approximately 35 seconds. The fuel may exceed its melting point after this time as the NaK coolant will boil if the reactor is not shut down. For 1/2, 1/3, and 1/4 pump failures, the fuel temperatures never exceed the fuel melting point even if the reactor is not shut down

High sensitivity thermal sensors on insulating diamond

Energy Technology Data Exchange (ETDEWEB)

Job, R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Denisenko, A.V. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Zaitsev, A.M. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices; Melnikov, A.A. [Belarussian State Univ., Minsk (Belarus). HEII and FD; Werner, M. [VDI/VDE-IT, Teltow (Germany); Fahrner, W.R. [Fernuniversitaet Hagen (Gesamthochschule) (Germany). Electron. Devices

1996-12-15

Diamond is a promising material to develop sensors for applications in harsh environments. To increase the sensitivity of diamond temperature sensors the effect of thermionic hole emission (TE) over an energetic barrier formed in the interface between highly boron-doped p-type and intrinsic insulating diamond areas has been suggested. To study the TE of holes a p-i-p diode has been fabricated and analyzed by electrical measurements in the temperature range between 300 K and 700 K. The experimental results have been compared with numerical simulations of its electrical characteristics. Based on a model of the thermionic emission of carriers into an insulator it has been suggested that the temperature sensitivity of the p-i-p diode on diamond is strongly affected by the re-emission of holes from a group of donor-like traps located at a level of 0.7-1.0 eV above the valence band. The mechanism of thermal activation of the current includes a spatial redistribution of the potential, which results in the TE regime from a decrease of the immobilized charge of the ionized traps within the i-zone of the diode and the correspondent lowering of the forward biased barrier. The characteristics of the p-i-p diode were studied with regard to temperature sensor applications. The temperature coefficient of resistance (TCR=-0.05 K{sup -1}) for temperatures above 600 K is about four times larger than the maximal attainable TCR for conventional boron-doped diamond resistors. (orig.)

A single-molecule diode

Science.gov (United States)

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-06-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Liquid diode

International Nuclear Information System (INIS)

1976-01-01

The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

High power densities from high-temperature material interactions. [in thermionic energy conversion and metallic fluid heat pipes

Science.gov (United States)

Morris, J. F.

1981-01-01

Thermionic energy conversion (TEC) and metallic-fluid heat pipes (MFHPs), offering unique advantages in terrestrial and space energy processing by virtue of operating on working-fluid vaporization/condensation cycles that accept great thermal power densities at high temperatures, share complex materials problems. Simplified equations are presented that verify and solve such problems, suggesting the possibility of cost-effective applications in the near term for TEC and MFHP devices. Among the problems discussed are: the limitation of alkali-metal corrosion, protection against hot external gases, external and internal vaporization, interfacial reactions and diffusion, expansion coefficient matching, and creep deformation.

Reliable Operation for 14500 h of a Wavelength-Stabilized Diode Laser System on a Microoptical Bench at 671 nm

DEFF Research Database (Denmark)

Sumpf, Bernd; Maiwald, Martin; Müller, André

2012-01-01

Reliability tests for wavelength-stabilized compact diode laser systems emitting at 671 nm are presented. The devices were mounted on microoptical benches with the dimensions of 13 mm $\\times\\,$4 mm. Reflecting Bragg gratings were used for wavelength stabilization and emission width narrowing...

Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

Science.gov (United States)

Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

2018-05-01

We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

Operation and maintenance manual for diode performance analysis program DIODE0

International Nuclear Information System (INIS)

Boyer, W.B.

1977-03-01

This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

Space Launch System Base Heating Test: Tunable Diode Laser Absorption Spectroscopy

Science.gov (United States)

Parker, Ron; Carr, Zak; MacLean, Mathew; Dufrene, Aaron; Mehta, Manish

2016-01-01

This paper describes the Tunable Diode Laser Absorption Spectroscopy (TDLAS) measurement of several water transitions that were interrogated during a hot-fire testing of the Space Launch Systems (SLS) sub-scale vehicle installed in LENS II. The temperature of the recirculating gas flow over the base plate was found to increase with altitude and is consistent with CFD results. It was also observed that the gas above the base plate has significant velocity along the optical path of the sensor at the higher altitudes. The line-by-line analysis of the H2O absorption features must include the effects of the Doppler shift phenomena particularly at high altitude. The TDLAS experimental measurements and the analysis procedure which incorporates the velocity dependent flow will be described.

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H2O mole fraction

International Nuclear Information System (INIS)

Xu, Lijun; Liu, Chang; Jing, Wenyang; Cao, Zhang; Xue, Xin; Lin, Yuzhen

2016-01-01

To monitor two-dimensional (2D) distributions of temperature and H 2 O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors’ knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H 2 O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm −1 (1343.3 nm) and 7185.6 cm −1 (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H 2 O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H 2 O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis

High power diode pumped solid state (DPSS) laser systems active media robust modeling and analysis

Science.gov (United States)

Kashef, Tamer M.; Mokhtar, Ayman M.; Ghoniemy, Samy A.

2018-02-01

Diode side-pumped solid-state lasers have the potential to yield high quality laser beams with high efficiency and reliability. This paper summarizes the results of simulation of the most predominant active media that are used in high power diode pumped solid-state (DPSS) laser systems. Nd:YAG, Nd:glass, and Nd:YLF rods laser systems were simulated using the special finite element analysis software program LASCAD. A performance trade off analysis for Nd:YAG, Nd:glass, and Nd:YLF rods was performed in order to predict the system optimized parameters and to investigate thermally induced thermal fracture that may occur due to heat load and mechanical stress. The simulation results showed that at the optimized values Nd:YAG rod achieved the highest output power of 175W with 43% efficiency and heat load of 1.873W/mm3. A negligible changes in laser output power, heat load, stress, and temperature distributions were observed when the Nd:YAG rod length was increased from 72 to 80mm. Simulation of Nd:glass at different rod diameters at the same pumping conditions showed better results for mechanical stress and thermal load than that of Nd:YAG and Nd:YLF which makes it very suitable for high power laser applications especially for large rod diameters. For large rod diameters Nd:YLF is mechanically weaker and softer crystal compared to Nd:YAG and Nd:glass due to its poor thermomechanical properties which limits its usage to only low to medium power systems.

Laser diode package with enhanced cooling

Science.gov (United States)

Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

2011-09-13

A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

Taming Instabilities in Plasma Discharges

International Nuclear Information System (INIS)

Klinger, T.; Krahnstover, N. O.; Mausbach, T.; Piel, A.

2000-01-01

Recent experimental work on taming instabilities in plasma discharges is discussed. Instead of suppressing instabilities, it is desired to achieve control over their dynamics, done by perturbing appropriately the current flow in the external circuit of the discharge. Different discrete and continuous feedback as well as open-loop control schemes are applied. Chaotic oscillations in plasma diodes are controlled using the OGY discrete feedback scheme. This is demonstrated both in experiment and computer simulation. Weakly developed ionization wave turbulence is tamed by continuous feedback control. Open-loop control of stochastic fluctuations - stochastic resonance - is demonstrated in a thermionic plasma diode. (author)

Foil-less plasma-filled diode for HPM generator

International Nuclear Information System (INIS)

Eltchaninov, A A; Kovalchuk, B M; Kurkan, I K; Zherlitsyn, A A

2014-01-01

Plasma-filled diode regarded as perspective source of electron beam feeding HPM generator of GW power level, comparing to conventional explosive emission vacuum diode. Electron beam generation occurs in plasma double layer, where plasma boundary plays as an anode. It allows cancelling the usage of anode foils or grids in HPM generators with the virtual cathode, which could limit its life time to few shots. The presence of ions in the e-beam drift space could raise the limiting current for a drift space, but it could affect to microwave generation also. Sectioned plasma-filled diode with beam current of about 100 kA, electron beam energy of about 0.5 MV and beam current density of 1-10 kA/cm 2 was realized. Cylindrical transport channel with the diameter of 200 mm and the length of about 30 cm was attached to the diode. Beam current measurements in a drift space were performed. Computer simulations of electron beam transport with the presence of ions were carried out with the 2.5D axisymmetric version of PiC-code KARAT. Obtained results would help optimizing electrodynamic system of HPM generator subjected to the presence of ions

Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

Science.gov (United States)

Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

2004-01-01

Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

Current transmission and nonlinear effects in un-gated thermionic cathode RF guns

Energy Technology Data Exchange (ETDEWEB)

Edelen, J. P. [Fermilab; Harris, J. R. [Air Force Weapons Lab

2017-05-03

Un-gated thermionic cathode RF guns are well known as a robust source of electrons for many accelerator applications. These sources are in principle scalable to high currents without degradation of the transverse emittance due to control grids but they are also known for being limited by back-bombardment. While back-bombardment presents a significant limitation, there is still a lack of general understanding on how emission over the whole RF period will affect the nature of the beams produced from these guns. In order to improve our understanding of how these guns can be used in general we develop analytical models that predict the transmission efficiency as a function of the design parameters, study how bunch compression and emission enhancement caused by Schottky barrier lowering affect the output current profile in the gun, and study the onset of space-charge limited effects and the resultant virtual cathode formation leading to a modulation in the output current distribution.

Highly modular high-brightness diode laser system design for a wide application range

Science.gov (United States)

Fritsche, Haro; Kruschke, Bastian; Koch, Ralf; Ferrario, Fabio; Kern, Holger; Pahl, Ullrich; Ehm, Einar; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang

2015-03-01

For an economic production it is important to serve as many applications as possible while keeping the product variations minimal. We present our modular laser design, which is based on single emitters and various combining technics. In a first step we accept a reduction of the very high brightness of the single emitters by vertical stacking. Those emitters can be wavelength stabilized by an external resonator, providing the very same feedback to each of those laser diodes which leads to an output power of about 100W with BPP of BPP. These "500W building blocks" are consequently designed in a way that without any system change new wavelengths can be implemented by only exchanging parts but without change of the production process. This design principal offers the option to adapt the wavelength of those blocks to any applications, from UV, visible into the far IR. From laser pumping and scientific applications to materials processing such as cutting and welding of copper aluminum or steel and also medical application. Operating at wavelengths between 900 nm and 1100 nm, these systems are mainly used in cutting and welding, but the technology can also be adapted to other wavelength ranges, such as 793 nm and 1530 nm. Around 1.5 μm the diodes are already successfully used for resonant pumping of Erbium lasers.[1] Furthermore, the fully integrated electronic concept allows addressing further applications, as it is capable of very short μs pulses up to cw mode operation by simple software commands.

High power diode pumped solid state lasers

International Nuclear Information System (INIS)

Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

1992-01-01

Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

Powerful infrared emitting diodes

Directory of Open Access Journals (Sweden)

Kogan L. M.

2012-02-01

Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

Determination of reference data of REB diodes by using a numerical method for different applications

International Nuclear Information System (INIS)

Sinman, S.; Sinman, A.

1982-01-01

In this study, some reference data of a REB diode are presented functionally. These given characteristics are consisted of the computational results. Generally the numerical scheme depends upon the essential parameters of the charged transmission line and Child-Langmuir's diode model. By this system, further the correlation functions, some other definite functions such as the voltage of transmission line Vsub(L)(t), the diode voltage Vsub(d)(t), the diode current Isub(d)(t), the diode impedance Rsub(d)(t), the diode input power Wsub(d)(t), the dissipated energy Usub(d)(t), the efficiency phi, the beam density nsub(b)(t), the relativistic beam energy Usub(b)(t), and the intrinsic impedance Zsub(int)(t) have also been investigated. (author)

A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

Science.gov (United States)

Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

2014-05-01

A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

International Nuclear Information System (INIS)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source. A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm 2 dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current after 30 ns, coupling 60% of the diode energy into ions

Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

International Nuclear Information System (INIS)

Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

1994-01-01

The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

Summary of space nuclear reactor power systems, 1983--1992

Energy Technology Data Exchange (ETDEWEB)

Buden, D.

1993-08-11

This report summarizes major developments in the last ten years which have greatly expanded the space nuclear reactor power systems technology base. In the SP-100 program, after a competition between liquid-metal, gas-cooled, thermionic, and heat pipe reactors integrated with various combinations of thermoelectric thermionic, Brayton, Rankine, and Stirling energy conversion systems, three concepts:were selected for further evaluation. In 1985, the high-temperature (1,350 K), lithium-cooled reactor with thermoelectric conversion was selected for full scale development. Since then, significant progress has been achieved including the demonstration of a 7-y-life uranium nitride fuel pin. Progress on the lithium-cooled reactor with thermoelectrics has progressed from a concept, through a generic flight system design, to the design, development, and testing of specific components. Meanwhile, the USSR in 1987--88 orbited a new generation of nuclear power systems beyond the, thermoelectric plants on the RORSAT satellites. The US has continued to advance its own thermionic fuel element development, concentrating on a multicell fuel element configuration. Experimental work has demonstrated a single cell operating time of about 1 1/2-y. Technology advances have also been made in the Stirling engine; an advanced engine that operates at 1,050 K is ready for testing. Additional concepts have been studied and experiments have been performed on a variety of systems to meet changing needs; such as powers of tens-to-hundreds of megawatts and highly survivable systems of tens-of-kilowatts power.

Summary of space nuclear reactor power systems, 1983--1992

International Nuclear Information System (INIS)

Buden, D.

1993-01-01

This report summarizes major developments in the last ten years which have greatly expanded the space nuclear reactor power systems technology base. In the SP-100 program, after a competition between liquid-metal, gas-cooled, thermionic, and heat pipe reactors integrated with various combinations of thermoelectric thermionic, Brayton, Rankine, and Stirling energy conversion systems, three concepts:were selected for further evaluation. In 1985, the high-temperature (1,350 K), lithium-cooled reactor with thermoelectric conversion was selected for full scale development. Since then, significant progress has been achieved including the demonstration of a 7-y-life uranium nitride fuel pin. Progress on the lithium-cooled reactor with thermoelectrics has progressed from a concept, through a generic flight system design, to the design, development, and testing of specific components. Meanwhile, the USSR in 1987--88 orbited a new generation of nuclear power systems beyond the, thermoelectric plants on the RORSAT satellites. The US has continued to advance its own thermionic fuel element development, concentrating on a multicell fuel element configuration. Experimental work has demonstrated a single cell operating time of about 1 1/2-y. Technology advances have also been made in the Stirling engine; an advanced engine that operates at 1,050 K is ready for testing. Additional concepts have been studied and experiments have been performed on a variety of systems to meet changing needs; such as powers of tens-to-hundreds of megawatts and highly survivable systems of tens-of-kilowatts power

Manufacture of axially insulated large-area diodes

International Nuclear Information System (INIS)

Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

1999-01-01

The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

Electron inertia effects for an electron fluid model by the applied-B ion diode

Energy Technology Data Exchange (ETDEWEB)

Gordeev, A V; Levchenko, S V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

1997-12-31

Numerical calculations within the framework of the one-dimensional vortex-like electron fluid model in applied-B ion diodes, taking account the electron inertia effects, are presented. The existence of the additional relation between the magnetic field and the electric potential offers an opportunity to reduce the ion diode problem to the system of the algebraic equations for the constants introduced. The ion current density in an ion diode is determined only by the magnetic flux cut out by the virtual cathode. As an illustration, the ion diode impedance for the KALIF device was calculated. (author). 2 figs., 6 refs.

Enhanced vbasis laser diode package

Science.gov (United States)

Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

2014-08-19

A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

OpenAIRE

Cappuccio, Joseph C., Jr.

1988-01-01

Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

The Properties of Binary and Ternary Ti Based Coatings Produced by Thermionic Vacuum Arc (TVA Technology

Directory of Open Access Journals (Sweden)

Aurelia Mandes

2018-03-01

Full Text Available A series of the multicomponent thin films (binary: Ti-C; Ti-Ag and ternary: Ti-C-Ag; Ti-C-Al were fabricated by Thermionic Vacuum Arc (TVA technology in order to study the wear resistance and the anticorrosion properties. The effects of Ti amount on the microstructure, tribological and morphological properties were subsequently investigated. TVA is an original deposition method using a combination of anodic arc and electron gun systems for the growth of films. The samples were characterized using scanning electron microscope (SEM and a transmission electron microscope (TEM accompanied by selected area electron diffraction (SAED. Tribological properties were studied by a ball-on-disc tribometer in the dry regime and the wettability was assessed by measuring the contact angle with the See System apparatus. Wear Rate results indicate an improved sliding wear behavior for Ti-C-Ag: 1.31 × 10−7 mm3/N m (F = 2 N compared to Ti-C-Al coating wear rate: 4.24 × 10−7 mm3/N m. On the other hand, by increasing the normal load to 3 N an increase to the wear rate was observed for Ti-C-Ag: 2.58 × 10−5 mm3 compared to 2.33 × 10−6 mm3 for Ti-C-Al coating.

Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

Science.gov (United States)

Bescond, M.; Logoteta, D.; Michelini, F.; Cavassilas, N.; Yan, T.; Yangui, A.; Lannoo, M.; Hirakawa, K.

2018-02-01

We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green’s function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.

Tuning range and output power optimization of an external-cavity GaN diode laser at 455 nm

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2016-01-01

In this paper we discuss how different feedback gratings affect the tuning range and the output power of external feedback diode laser systems. A tunable high-power narrow-spectrum external-cavity diode laser system around 455 nm is investigated. The laser system is based on a high-power GaN diode...... laser in a Littrow external-cavity. Both a holographic diffraction grating and a ruled diffraction grating are used as feedback elements in the external cavity. The output power, spectral bandwidth, and tunable range of the external cavity diode laser system are measured and compared with the two...... gratings at different injected currents. When the holographic grating is used, the laser system can be tuned over a range of 1.4 nm with an output power around 530 mW. When the ruled grating is used, the laser system can be tuned over a range of 6.0 nm with an output power around 80 mW. The results can...

High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

DEFF Research Database (Denmark)

Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

2011-01-01

Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

The use of laser diodes for control of uranium vaporization rates

International Nuclear Information System (INIS)

Hagans, K.; Galkowski, J.

1993-09-01

Within the Atomic Vapor Laser Isotope Separation (AVLIS) program we have successfully used the laser absorption spectroscopy technique (LAS) to diagnose process physics performance and control vaporization rate. In the LAS technique, a narrow line-width laser is tuned to an absorption line of the species to be measured. The laser light that is propagated through the sample is and, from this data, the density of the species can be calculated. These laser systems have exclusively consisted of expensive, cumbersome, and difficult to maintain argon-ion-pumped ring dye lasers. While the wavelength flexibility of dye lasers is very useful in a laboratory environment, these laser systems are not well suited for the industrial process control system under development for an AVLIS plant. Diode-lasers offer lower system costs, reduced man power requirements, reduced space requirements, higher system availability, and improved operator safety. We report the. successful deployment and test of a prototype laser diode based uranium vapor rate control system. Diode-laser generated LAS data was used to control the uranium vaporization rate in a hands-off mode for greater than 50 hours. With one minor adjustment the system successfully controlled the vaporization rate for greater than 147 hours. We report excellent agreement with ring dye laser diagnostics and uranium weigh-back measurements

Determination of rare earth elements in high purity rare earth oxides by liquid chromatography, thermionic mass spectrometry and combined liquid chromatography/thermionic mass spectrometry

International Nuclear Information System (INIS)

Stijfhoorn, D.E.; Stray, H.; Hjelmseth, H.

1993-01-01

A high-performance liquid chromatographic (HPLC) method for the determination of rare earth elements in rocks has been modified and used for the determination of rare earth elements (REE) in high purity rare earth oxides. The detection limit was 1-1.5 ng or 2-3 mg/kg when a solution corresponding to 0.5 mg of the rare earth oxide was injected. The REE determination was also carried out by adding a mixture of selected REE isotopes to the sample and analysing the collected HPLC-fractions by mass spectrometry (MS) using a thermionic source. Since the matrix element was not collected, interference from this element during the mass spectrometric analysis was avoided. Detection limits as low as 0.5 mg/kg could then be obtained. Detection limits as low as 0.05 mg/kg were possible by MS without HPLC-pre-separation, but this approach could only be used for those elements that were not affected by the matrix. Commercial samples of high purity Nd 2 O 3 , Gd 2 O 3 and Dy 2 O 3 were analysed in this study, and a comparison of results obtained by HPLC, combined HPLC/MS and direct MS is presented. (Author)

Tunable diode laser absorption spectroscopy-based tomography system for on-line monitoring of two-dimensional distributions of temperature and H{sub 2}O mole fraction

Energy Technology Data Exchange (ETDEWEB)

Xu, Lijun, E-mail: lijunxu@buaa.edu.cn; Liu, Chang; Jing, Wenyang; Cao, Zhang [School of Instrument Science and Opto-Electronic Engineering, Beihang University, Beijing 100191 (China); Ministry of Education’s Key Laboratory of Precision Opto-Mechatronics Technology, Beijing 100191 (China); Xue, Xin; Lin, Yuzhen [School of Energy and Power Engineering, Beihang University, Beijing 100191 (China)

2016-01-15

To monitor two-dimensional (2D) distributions of temperature and H{sub 2}O mole fraction, an on-line tomography system based on tunable diode laser absorption spectroscopy (TDLAS) was developed. To the best of the authors’ knowledge, this is the first report on a multi-view TDLAS-based system for simultaneous tomographic visualization of temperature and H{sub 2}O mole fraction in real time. The system consists of two distributed feedback (DFB) laser diodes, a tomographic sensor, electronic circuits, and a computer. The central frequencies of the two DFB laser diodes are at 7444.36 cm{sup −1} (1343.3 nm) and 7185.6 cm{sup −1} (1391.67 nm), respectively. The tomographic sensor is used to generate fan-beam illumination from five views and to produce 60 ray measurements. The electronic circuits not only provide stable temperature and precise current controlling signals for the laser diodes but also can accurately sample the transmitted laser intensities and extract integrated absorbances in real time. Finally, the integrated absorbances are transferred to the computer, in which the 2D distributions of temperature and H{sub 2}O mole fraction are reconstructed by using a modified Landweber algorithm. In the experiments, the TDLAS-based tomography system was validated by using asymmetric premixed flames with fixed and time-varying equivalent ratios, respectively. The results demonstrate that the system is able to reconstruct the profiles of the 2D distributions of temperature and H{sub 2}O mole fraction of the flame and effectively capture the dynamics of the combustion process, which exhibits good potential for flame monitoring and on-line combustion diagnosis.

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Effect of the work function and emission of the collector on the parameters of thermionic converters (TC)

International Nuclear Information System (INIS)

Kaibyshev, V.Z.

1986-01-01

In the optimal, relative to the temperature of the collector, state of modern thermionic converters (TC) the emission of the electrons from it has a substantial effect on the voltage drop in the gap. This paper preents an analysis of the boundary conditions at the collector of the TC. Calculations are presented which show that with a constant current the plasma parameters at the boundary with the collector are virtually independent of the emission from the collector right up to vanishing of the potential jump. The optimal regime with respect to temperatuer and work function of the collector is examined. The collector with a nonuniform work function is discussed

Performance review and reengineering of the protection diodes of the LHC main superconducting magnets

CERN Document Server

Savary, F; Bednarek, M J; Dahlerup-Petersen, K; D'Angelo, G; Dib, G; Giloux, C; Grand-Clement, L; Izquierdo Bermudez, S; Moron-Ballester, R; Prin, H; Roger, V; Verweij, A; Willering, G

2014-01-01

The LHC main superconducting circuits are composed of up to 154 series-connected dipole magnets and 51 series-connected quadrupole magnets. These magnets operate at 1.9 K in superfluid helium at a nominal current of 11.85 kA. Cold diodes are connected in parallel to each magnet in order to bypass the current in case of a quench in the magnet while ramping down the current in the entire circuit. Both the diodes and the diode leads should therefore be capable of conducting this exponentially decaying current with time constants of up to 100 s. The diode stacks consist of the diodes and their heat sinks, and are essential elements of the protection system from which extremely high reliability is expected. The electrical resistance of 24 diode leads was measured in the LHC machine during operation. Unexpectedly high resistances of the order of 40 μΩ were measured at a few locations, which triggered a comprehensive review of the diode behaviour and of the associated current leads and bolted contacts. In this pap...

Development of a System for Absolute Quantum Efficiency Determination of Hybrid Photo Diodes

CERN Document Server

Hammarstedt, P

2001-01-01

At CERN, the European Laboratory for Particle Physics, a new particle accelerator, the Large Hadron Collider (LHC), is under development. The detectors at LHC require development of highly sophisticated technologies, including Hybrid Photo Diodes (HPD) for high efficiency, high resolution single photon detection with a large area coverage. During the HPD development phase, one of the crucial parameters in the optimization of the photocathode creation process is the quantum efficiency. The aim of this Master Thesis has been to design and implement a system for high precision, high resolution quantum efficiency determination over a large, 200-700 nm photon wavelength range. Commercially available components have been obtained, an optomechanical system has been designed and built, and all the necessary data acquisition, control and analysis software has been implemented. The relative precision of the measurement system has been determined to 2%, with additional possible systematic errors less than 2%. Various qu...

Focusing experiments with light ion diodes

International Nuclear Information System (INIS)

Johnson, D.L.

1978-01-01

A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Laser diodes for sensing applications: adaptive cruise control and more

Science.gov (United States)

Heerlein, Joerg; Morgott, Stefan; Ferstl, Christian

2005-02-01

Adaptive Cruise Controls (ACC) and pre-crash sensors require an intelligent eye which can recognize traffic situations and deliver a 3-dimensional view. Both microwave RADAR and "Light RADAR" (LIDAR) systems are well suited as sensors. In order to utilize the advantages of LIDARs -- such as lower cost, simpler assembly and high reliability -- the key component, the laser diode, is of primary importance. Here, we present laser diodes which meet the requirements of the automotive industry.

Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

Science.gov (United States)

2012-09-01

Optics Letters, 28(23):2336–2338, 2003. 48. Lavan, M. “High Energy Laser Systems for Short Range Defense”. Acta Physica Polonica -Series A General Physics...able diode laser spectrometer for the remote sensing of vehicle emissions”. Spec- trochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 60...P. “A review of recent advances in semiconductor laser based gas mon- itors”. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 54

Near-infrared tunable laser diode spectroscopy: an easy way for gas sensing

Science.gov (United States)

Larive, Marc; Henriot, V.

1997-05-01

A gas sensor using optical spectrometry and dedicated to a specific gas is studied. It should be able to operate out of laboratories with a very long life and a low maintenance requirement. It is based on TLDS (tunable laser diode spectroscopy) and uses a standard Perot-Fabry laser diode already developed for telecommunications. The mode selection is realized by a passband filter and the wavelength tuning is performed via the diode temperature or its injection current. A PIN photodiode is used for detection, however a rough photoacoustic solution is intended for the future. Absorptions as low as 3.10-3 are detected with this rough system and a limit detection of 10-3 is available with a signal to noise ratio of unity. Experiments have shown that this system is strongly selective for the specified gas (currently the methane). A simulation has been performed which very well fits the experiment and allows us to extrapolate the performances of the system for other gases.

Novel diode-based laser system for combined transcutaneous monitoring and computer-controlled intermittent treatment of jaundiced neonates

Science.gov (United States)

Hamza, Mostafa; El-Ahl, Mohammad H. S.; Hamza, Ahmad M.

2001-06-01

The high efficacy of laser phototherapy combined with transcutaneous monitoring of serum bilirubin provides optimum safety for jaundiced infants from the risk of bilirubin encephalopathy. In this paper the authors introduce the design and operating principles of a new laser system that can provide simultaneous monitoring and treatment of several jaundiced babies at one time. The new system incorporates diode-based laser sources oscillating at selected wavelengths to achieve both transcutaneous differential absorption measurements of bilirubin concentration in addition to the computer controlled intermittent laser therapy through a network of optical fibers. The detailed description and operating characteristics of this system are presented.

700 W blue fiber-coupled diode-laser emitting at 450 nm

Science.gov (United States)

Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

2018-02-01

A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

High power multiple wavelength diode laser stack for DPSSL application without temperature control

Science.gov (United States)

Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

2018-02-01

High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

Atomic spectroscopy with diode lasers

International Nuclear Information System (INIS)

Tino, G.M.

1994-01-01

Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

Optimization of light quality from color mixing light-emitting diode systems for general lighting

Science.gov (United States)

Thorseth, Anders

2012-03-01

Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Thermometric characteristics of silicon semiconductor diodes

International Nuclear Information System (INIS)

Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

1975-01-01

To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

Electron dosimetry in irradiation processing with rad-hard diodes

International Nuclear Information System (INIS)

Santos, Thais Cavalheri dos

2012-01-01

This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

Mission operations for unmanned nuclear electric propulsion outer planet exploration with a thermionic reactor spacecraft.

Science.gov (United States)

Spera, R. J.; Prickett, W. Z.; Garate, J. A.; Firth, W. L.

1971-01-01

Mission operations are presented for comet rendezvous and outer planet exploration NEP spacecraft employing in-core thermionic reactors for electric power generation. The selected reference missions are the Comet Halley rendezvous and a Jupiter orbiter at 5.9 planet radii, the orbit of the moon Io. The characteristics of the baseline multi-mission NEP spacecraft are presented and its performance in other outer planet missions, such as Saturn and Uranus orbiters and a Neptune flyby, are discussed. Candidate mission operations are defined from spacecraft assembly to mission completion. Pre-launch operations are identified. Shuttle launch and subsequent injection to earth escape by the Centaur D-1T are discussed, as well as power plant startup and the heliocentric mission phases. The sequence and type of operations are basically identical for all missions investigated.

5.5 W of Diffraction-Limited Green Light Generated by SFG of Tapered Diode Lasers in a Cascade of Nonlinear Crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Jensen, Ole Bjarlin; Andersen, Peter Eskil

2015-01-01

Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems.......Diode-based high power visible lasers are perfect pump sources for, e.g., titaniumsapphire lasers. The combination of favorable scaling laws in both SFG and cascading of nonlinear crystals allows access to unprecedented powers in diode-based systems....

10 KWe dual-mode space nuclear power system for military and scientific applications

International Nuclear Information System (INIS)

Malloy, J.; Westerman, K.; Rochow, R.; Scoles, S.

1992-01-01

This paper discusses a 10 KWe dual-mode space power system concept which has been identified and is based on INEL's Small Externally-fueled Heat Pipe Thermionic Reactor (SEHPTR) concept. This power system will enhance user capabilities by providing reliable electric power and by providing two propulsion systems; electric power for an arc-jet electric propulsion system and direct thrust by heating hydrogen propellant inside the reactor. The low thrust electric thrusters allow efficient station keeping and long-term maneuvering. This paper will focus on the nuclear power system design, including: the reactor with its UO 2 fuel in tungsten clad, 36 thermionic heat pipe modules (THPMs) which produce electricity within the reactor and remove waste heat, radiation shielding, waste heat radiators, and reactivity control systems. The use of non-vented fuel elements for short lifetime missions (under five years) will be described

Some properties of low-vapor-pressure braze alloys for thermionic converters

Science.gov (United States)

Bair, V. L.

1978-01-01

Density, dc electrical resistivity, thermal conductivity, and linear thermal expansion are measured for arc-melted rod-shaped samples of binary eutectics of Zr, Hf, Ru, Nb, Ir, Mo, Ta, Os, Re, and W selected as very-low-pressure braze fillers for thermionic converters. The first two properties are measured at 296 K for Zr-21.7 at% Ru, Zr-13 wt% W, Zr-19 wt% W, Zr-22.3 at% Nb, Nb-66.9 at% Ru, Hf-25.3 wt% Re, Zr-25.7 at% Ta, Hf-22.5 at% W, and Nb-35 wt% Mo. The last property is measured from 293 K to 2/3 melting point for specified alloys of different compositions. Resistivities of 0.000055 to 0.000181 ohm-cm are observed with the alloys having resistivities about ten times that of the less resistive constituent metal and about three times that of the more resistive constituent metal, except for Zr-19 wt% W and Nb-35 wt% Mo (greater resistivities). Thermal expansion coefficients vary from 0.000006 to 0.0000105/K. All brazes exhibit linear thermal expansion near that of their constituent metals.

Respiratory complications after diode-laser-assisted tonsillotomy.

Science.gov (United States)

Fischer, Miloš; Horn, Iris-Susanne; Quante, Mirja; Merkenschlager, Andreas; Schnoor, Jörg; Kaisers, Udo X; Dietz, Andreas; Kluba, Karsten

2014-08-01

Children with certain risk factors, such as comorbidities or severe obstructive sleep apnea syndrome (OSAS) are known to require extended postoperative monitoring after adenotonsillectomy. However, there are no recommendations available for diode-laser-assisted tonsillotomy. A retrospective chart review of 96 children who underwent diode-laser-assisted tonsillotomy (07/2011-06/2013) was performed. Data for general and sleep apnea history, power of the applied diode-laser (λ = 940 nm), anesthesia parameters, the presence of postoperative respiratory complications and postoperative healing were evaluated. After initially uncomplicated diode-laser-assisted tonsillotomy, an adjustment of post-anesthesia care was necessary in 16 of 96 patients due to respiratory failure. Respiratory complications were more frequent in younger children (3.1 vs. 4.0 years, p = 0.049, 95 % CI -1.7952 to -0.0048) and in children who suffered from nocturnal apneas (OR = 5.00, p diode-laser power higher than 13 W could be identified as a risk factor for the occurrence of a postoperative oropharyngeal edema (OR = 3.45, p diode-laser-assisted tonsillotomy. We recommend a reduced diode-laser power (<13 W) to reduce oropharyngeal edema.

Performance Analysis of Single Photon Avalanche Diode Underwater VLC System Using ARQ

KAUST Repository

Shafiqu, Taniya

2017-08-24

Single photon avalanche diode (SPAD) has recently been introduced as a powerful detector for long distance underwater visible light (UVLC) communication. In this paper, the performance of the SPAD detector in UVLC is analyzed considering the effect of the turbulence induced fading resulting from air bubbles in addition to the combined effect of attenuation and scattering. Automatic repeat request (ARQ) system is adopted to mitigate different underwater impairments and reduce the error probability at the receiver side. Approximate packet error rate (PER) expressions are derived using Laguerre Gauss polynomial for a finite number of transmission. Next, the average energy efficiency and throughput are analyzed to account for the increased energy consumption cost and the decreased effective transmission rate, which results from adopting the ARQ scheme. Finally, different numerical results are introduced to verify the derived PER expressions, demonstrate the ability of the proposed ARQ system in extending the transmission range, and show the trade-off between energy efficiency (EE) and throughput.

Plasma filled diodes and application to a PEOS

International Nuclear Information System (INIS)

Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.

1985-01-01

Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens

Recent advancements in spectroscopy using tunable diode lasers

International Nuclear Information System (INIS)

Nasim, Hira; Jamil, Yasir

2013-01-01

Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

Quasi-CW Laser Diode Bar Life Tests

Science.gov (United States)

Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

1997-01-01

NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

Carbon nanotube Schottky diode: an atomic perspective

International Nuclear Information System (INIS)

Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

2008-01-01

The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

Non-linear thermal fluctuations in a diode

NARCIS (Netherlands)

Kampen, N.G. van

As an example of non-linear noise the fluctuations in a circuit consisting of a diode and a condenser C are studied. From the master equation for this system the following results are derived. 1. (i) The equilibrium distribution of the voltage is rigorously Gaussian, the average voltage being

A one-dimensional Q-machine model taking into account charge-exchange collisions

International Nuclear Information System (INIS)

Maier, H.; Kuhn, S.

1992-01-01

The Q-machine is a nontrivial bounded plasma system which is excellently suited not only for fundamental plasma physics investigations but also for the development and testing of new theoretical methods for modeling such systems. However, although Q-machines have now been around for over thirty years, it appears that there exist no comprehensive theoretical models taking into account their considerable geometrical and physical complexity with a reasonable degree of self-consistency. In the present context we are concerned with the low-density, single-emitter Q-machine, for which the most widely used model is probably the (one-dimensional) ''collisionless plane-diode model'', which has originally been developed for thermionic diodes. Although the validity of this model is restricted to certain ''axial'' phenomena, we consider it a suitable starting point for extensions of various kinds. While a generalization to two-dimensional geometry (with still collisionless plasma) is being reported elsewhere, the present work represents a first extension to collisional plasma (with still one-dimensional geometry). (author) 12 refs., 2 figs

Clinical experience with routine diode dosimetry for electron beam radiotherapy

International Nuclear Information System (INIS)

Yaparpalvi, Ravindra; Fontenla, Doracy P.; Vikram, Bhadrasain

2000-01-01

Purpose: Electron beam radiotherapy is frequently administered based on clinical setups without formal treatment planning. We felt, therefore, that it was important to monitor electron beam treatments by in vivo dosimetry to prevent errors in treatment delivery. In this study, we present our clinical experience with patient dose verification using electron diodes and quantitatively assess the dose perturbations caused by the diodes during electron beam radiotherapy. Methods and Materials: A commercial diode dosimeter was used for the in vivo dose measurements. During patient dosimetry, the patients were set up as usual by the therapists. Before treatment, a diode was placed on the patient's skin surface and secured with hypoallergenic tape. The patient was then treated and the diode response registered and stored in the patient radiotherapy system database via our in-house software. A customized patient in vivo dosimetry report showing patient details, expected and measured dose, and percent difference was then generated and printed for analysis and record keeping. We studied the perturbation of electron beams by diodes using film dosimetry. Beam profiles at the 90% prescription isodose depths were obtained with and without the diode on the beam central axis, for 6-20 MeV electron beams and applicator/insert sizes ranging from a 3-cm diameter circular field to a 25 x 25 cm open field. Results: In vivo dose measurements on 360 patients resulted in the following ranges of deviations from the expected dose at the various anatomic sites: Breast (222 patients) -20.3 to +23.5% (median deviation 0%); Head and Neck (63 patients) -21.5 to +14.8% (median -0.7%); Other sites (75 patients) -17.6 to +18.8% (median +0.5%). Routine diode dosimetry during the first treatment on 360 patients (460 treatment sites) resulted in 11.5% of the measurements outside our acceptable ±6% dose deviation window. Only 3.7% of the total measurements were outside ±10% dose deviation. Detailed

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

2017-01-01

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

KAUST Repository

Khan, A.A.

2017-07-27

For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

A practical guide to handling laser diode beams

CERN Document Server

Sun, Haiyin

2015-01-01

This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

New Type Far IR and THz Schottky Barrier Detectors for Scientific and Civil Application

Directory of Open Access Journals (Sweden)

V. G. Ivanov

2011-01-01

Full Text Available The results of an experimental investigation into a new type of VLWIR detector based on hot electron gas emission and architecture of the detector are presented and discussed. The detectors (further referred to as HEGED take advantage of the thermionic emission current change effect in a semiconductor diode with a Schottky barrier (SB as a result of the direct transfer of the absorbed radiation energy to the system of electronic gas in the quasimetallic layer of the barrier. The possibility of detecting radiation having the energy of quantums less than the height of the Schottky diode potential barrier and of obtaining a substantial improvement of a cutoff wavelength to VLWIR of the PtSi/Si detector has been demonstrated. The complementary contribution of two physical mechanisms of emanation detection—“quantum” and hot electrons gas emission—has allowed the creation of a superwideband IR detector using standard silicon technology.

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Diode for providing X-rays

International Nuclear Information System (INIS)

Rix, W.H.; Shannon, J.P.

1991-01-01

This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end

Diode-Assisted Buck-Boost Voltage-Source Inverters

DEFF Research Database (Denmark)

Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

2009-01-01

, a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

Ion current reduction in pinched electron beam diodes

International Nuclear Information System (INIS)

Quintenz, J.P.; Poukey, J.W.

1977-01-01

A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

Pseudo-Random Modulation of a Laser Diode for Generating Ultrasonic Longitudinal Waves

Science.gov (United States)

Madaras, Eric I.; Anatasi, Robert F.

2004-01-01

Laser generated ultrasound systems have historically been more complicated and expensive than conventional piezoelectric based systems, and this fact has relegated the acceptance of laser based systems to niche applications for which piezoelectric based systems are less suitable. Lowering system costs, while improving throughput, increasing ultrasound signal levels, and improving signal-to-noise are goals which will help increase the general acceptance of laser based ultrasound. One current limitation with conventional laser generated ultrasound is a material s damage threshold limit. Increasing the optical power to generate more signal eventually damages the material being tested due to rapid, high heating. Generation limitations for laser based ultrasound suggests the use of pulse modulation techniques as an alternate generation method. Pulse modulation techniques can spread the laser energy over time or space, thus reducing laser power densities and minimizing damage. Previous experiments by various organizations using spatial or temporal pulse modulation have been shown to generate detectable surface, plate, and bulk ultrasonic waves with narrow frequency bandwidths . Using narrow frequency bandwidths improved signal detectability, but required the use of expensive and powerful lasers and opto-electronic systems. The use of a laser diode to generate ultrasound is attractive because of its low cost, small size, light weight, simple optics and modulation capability. The use of pulse compression techniques should allow certain types of laser diodes to produce usable ultrasonic signals. The method also does not need to be limited to narrow frequency bandwidths. The method demonstrated here uses a low power laser diode (approximately 150 mW) that is modulated by controlling the diode s drive current and the resulting signal is recovered by cross correlation. A potential application for this system which is briefly demonstrated is in detecting signals in thick

Calculational models of close-spaced thermionic converters

International Nuclear Information System (INIS)

McVey, J.B.

1983-01-01

Two new calculational models have been developed in conjunction with the SAVTEC experimental program. These models have been used to analyze data from experimental close-spaced converters, providing values for spacing, electrode work functions, and converter efficiency. They have also been used to make performance predictions for such converters over a wide range of conditions. Both models are intended for use in the collisionless (Knudsen) regime. They differ from each other in that the simpler one uses a Langmuir-type formulation which only considers electrons emitted from the emitter. This approach is implemented in the LVD (Langmuir Vacuum Diode) computer program, which has the virtue of being both simple and fast. The more complex model also includes both Saha-Langmuir emission of positive cesium ions from the emitter and collector back emission. Computer implementation is by the KMD1 (Knudsen Mode Diode) program. The KMD1 model derives the particle distribution functions from the Vlasov equation. From these the particle densities are found for various interelectrode motive shapes. Substituting the particle densities into Poisson's equation gives a second order differential equation for potential. This equation can be integrated once analytically. The second integration, which gives the interelectrode motive, is performed numerically by the KMD1 program. This is complicated by the fact that the integrand is often singular at one end point of the integration interval. The program performs a transformation on the integrand to make it finite over the entire interval. Once the motive has been computed, the output voltage, current density, power density, and efficiency are found. The program is presently unable to operate when the ion richness ratio β is between about .8 and 1.0, due to the occurrence of oscillatory motives

Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications

KAUST Repository

Shen, Chao

2017-02-16

III-nitride light emitters, such as light-emitting diodes (LEDs) and laser diodes (LDs), have been demonstrated and studied for solid-state lighting (SSL) and visible-light communication (VLC) applications. However, for III-nitride LEDbased SSL-VLC system, its efficiency is limited by the

Arbitrary waveform generator to improve laser diode driver performance

Science.gov (United States)

Fulkerson, Jr, Edward Steven

2015-11-03

An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

Science.gov (United States)

Aydin, H.; Bacaksiz, C.; Yagmurcukardes, N.; Karakaya, C.; Mermer, O.; Can, M.; Senger, R. T.; Sahin, H.; Selamet, Y.

2018-01-01

We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1‧:3″-terphenyl-5‧ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1‧:3‧1‧-terphenyl-5‧ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π-π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.

Moderately converging ion and electron flows in two-dimensional diodes

International Nuclear Information System (INIS)

Cavenago, M.

2012-01-01

Flow of particles in diodes is solved selfconsistently assuming an approximated system of flow lines, that can be easily represented by an analytic transformation in a complex plane, with assumed uniformity in the third spatial direction. Beam current compression is tunable by an angle parameter α 0 ; transformed coordinate lines are circular arcs, exactly matching to the curved cathode usually considered by rectilinear converging flows. The curvature of flow lines allows to partly balance the transverse effect of space charge. A self-contained discussion of the whole theory is reported, ranging from analytical solution for selfconsistent potential to electrode drawing to precise numerical simulation, which serves as a verification and as an illustration of typical electrode shapes. Motion and Poisson equation are written in a curved flow line system and their approximate consistency is shown to imply an ordinary differential equation for the beam edge potential. Transformations of this equation and their series solutions are given and discussed, showing that beam edge potential has a maximum, so supporting both diode (with α 0 ≅π/3) and triode design. Numerical simulations confirm the consistency of these solution. Geometrical details of diode design are discussed: the condition of a zero divergence beam, with the necessary anode lens effect included, is written and solved, as a function of beam compression; accurate relations for diode parameters and perveance are given. Weakly relativistic effects including self-magnetic field are finally discussed as a refinement.

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2013-01-01

Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback....... The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Spectroscopic amplifier for pin diode

International Nuclear Information System (INIS)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

2014-10-01

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Status and plans for the next generation magnetically immersed diodes on RITS

International Nuclear Information System (INIS)

Rovang, Dean; Kincy, Mark; Maenchen, John; Menge, Peter; Molina, Isidro; Olson, Craig; Welch, Dale; Oliver, Bryan; Ives, Harry; VanDeValde, David; Johnson, David L.; Lesch, Benny; Swenson, Chuck

2002-01-01

Sandia National Laboratories is investigating and developing high-dose, high-brightness flash radiographic sources. We are in the process of designing; fabricating and conducting engineering tests on the next-generation magnetically immersed electron diodes. These diodes employ unique, large-bore (80-110 mm), high-field (28-45 T), cryogenically-cooled solenoid magnets to help produce an intense electron beam from a needle-like cathode 'immersed' in the strong Bz field of the magnet. The diode designs and status of the engineering development are described. Later this year we plan to conduct experiments with these sources on the new Radiographic Integrated Test Stand (RITS), now in operation at Sandia. In its present three-stage configuration, RITS provides a 4-MV, 150-kA, 70-ns pulse to the diode. Fully three-dimensional particle in cell LSP code simulations are used to investigate relevant physics issues and the expected radiographic performance (spot size and dose) of this system. Preliminary results from these simulations are described

The impact of plasma dynamics on the self-magnetic-pinch diode impedance

International Nuclear Information System (INIS)

Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; Gignac, Raymond E.; Molina, Isidro; Obregon, Robert; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.; Webb, Timothy J.; Mazarakis, Michael G.; Kiefer, Mark L.; Johnston, Mark D.; Leckbee, Joshua J.; Nielsen, Dan; Romero, Tobias; Simpson, Sean; Ziska, Derek

2015-01-01

The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standing theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. The results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v r × B θ acceleration into the gap

THz and Sub-THz Capabilities of a Table-Top Radiation Source Driven by an RF Thermionic Electron Gun

Energy Technology Data Exchange (ETDEWEB)

Smirnov, Alexei V.; Agustsson, R.; Boucher, S.; Campese, Tara; Chen, Y.C.; Hartzell, Josiah J.; Jocobson, B.T.; Murokh, A.; O' Shea, F.H.; Spranza, E.; Berg, W.; Borland, M.; Dooling, J. C.; Erwin, L.; Lindberg, R. R.; Pasky, S.J.; Sereno, N.; Sun, Y.; Zholents, A.

2017-06-01

Design features and experimental results are presented for a sub-mm wave source [1] based on APS RF thermionic electron gun. The setup includes compact alpha-magnet, quadrupoles, sub-mm-wave radiators, and THz optics. The sub-THz radiator is a planar, oversized structure with gratings. Source upgrade for generation frequencies above 1 THz is discussed. The THz radiator will use a short-period undulator having 1 T field amplitude, ~20 cm length, and integrated with a low-loss oversized waveguide. Both radiators are integrated with a miniature horn antenna and a small ~90°-degree in-vacuum bending magnet. The electron beamline is designed to operate different modes including conversion to a flat beam interacting efficiently with the radiator. The source can be used for cancer diagnostics, surface defectoscopy, and non-destructive testing. Sub-THz experiment demonstrated a good potential of a robust, table-top system for generation of a narrow bandwidth THz radiation. This setup can be considered as a prototype of a compact, laser-free, flexible source capable of generation of long trains of Sub-THz and THz pulses with repetition rates not available with laser-driven sources.

Properties of a novel radiophotoluminescent readout system using a cw modulated UV laser diode and phase-sensitive technique

International Nuclear Information System (INIS)

Zhao, C.; Kurobori, T.; Miyamoto, Y.; Yamamoto, T.

2011-01-01

We have proposed and constructed a novel readout system for measuring a dose-dependent radiophotoluminescence (RPL) signal of a silver-activated phosphate glass dosimeter. The present reader consists of a modulated continuous-wave (cw) ultraviolet (UV) laser diode at 375 nm as an excitation and a phase-sensitive technique using a lock-in amplifier. Preliminary results using a home-made reader are compared with those of the conventional technique based on a combination of a pulsed UV N 2 laser excitation at 337 nm and a photon counting system.

Radiation effects in semiconductor laser diode arrays

International Nuclear Information System (INIS)

Carson, R.F.

1988-01-01

The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

Quantum Effect in a Diode Included Nonlinear Inductance-Capacitance Mesoscopic Circuit

International Nuclear Information System (INIS)

Yan Zhanyuan; Zhang Xiaohong; Ma Jinying

2009-01-01

The mesoscopic nonlinear inductance-capacitance circuit is a typical anharmonic oscillator, due to diodes included in the circuit. In this paper, using the advanced quantum theory of mesoscopic circuits, which based on the fundamental fact that the electric charge takes discrete value, the diode included mesoscopic circuit is firstly studied. Schroedinger equation of the system is a four-order difference equation in p-circumflex representation. Using the extended perturbative method, the detail energy spectrum and wave functions are obtained and verified, as an application of the results, the current quantum fluctuation in the ground state is calculated. Diode is a basis component in a circuit, its quantization would popularize the quantum theory of mesoscopic circuits. The methods to solve the high order difference equation are helpful to the application of mesoscopic quantum theory.

Temperature persistent bistability and threshold switching in a single barrier heterostructure hot-electron diode

DEFF Research Database (Denmark)

Stasch, R.; Hey, R.; Asche, M.

1996-01-01

Bistable current–voltage characteristics caused by competition of tunneling through and field-enhanced thermionic emission across a single barrier are investigated in an n–-GaAs/Al0.34Ga0.66As/n+-GaAs structure. The S-shaped part of the characteristic persists in the whole temperature regime...

Microclump effects in magnetically-immersed electron diodes

International Nuclear Information System (INIS)

Olson, C.L.

1998-01-01

Magnetically-immersed electron diodes are being developed to produce needle-like, high-current, electron beams for radiography applications. An immersed diode consists of a needle cathode and a planar anode/bremmstrahlung converter which are both immersed in a strong solenoidal magnetic field (12--50 T); nominal parameters are 10 MV, 40 kA, 0.5 mm radius cathode, and 5--35 cm anode-cathode gaps. A physical picture of normal and abnormal diode behavior is emerging. Normal diode behavior occurs for times 0 ≤ t ≤ τ, where the transition time τ is typically 30 ns; during this time, bipolar space-charge limited flow occurs, which scales well to desired radiography parameters of high dose and small spot size. Abnormal diode behavior occurs for t ≥ τ, which results in substantial increases in spot size and current (impedance reduction). This abnormal behavior appears to be caused by an increase in ion charge in the gap, which may result from poor vacuum, impurity ions undergoing ion-ion stripping collisions during transit, or microclumps undergoing stripping collisions during transit. The potential effects of microclumps on diode behavior are reported here

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Fixed-wavelength H2O absorption spectroscopy system enhanced by an on-board external-cavity diode laser

International Nuclear Information System (INIS)

Brittelle, Mack S; Simms, Jean M; Sanders, Scott T; Gord, James R; Roy, Sukesh

2016-01-01

We describe a system designed to perform fixed-wavelength absorption spectroscopy of H 2 O vapor in practical combustion devices. The system includes seven wavelength-stabilized distributed feedback (WSDFB) lasers, each with a spectral accuracy of  ±1 MHz. An on-board external cavity diode laser (ECDL) that tunes 1320–1365 nm extends the capabilities of the system. Five system operation modes are described. In one mode, a sweep of the ECDL is used to monitor each WSDFB laser wavelength with an accuracy of  ±30 MHz. Demonstrations of fixed-wavelength thermometry at 10 kHz bandwidth in near-room-temperature gases are presented; one test reveals a temperature measurement error of ∼0.43%. (paper)

Surface properties of ceramic/metal composite materials for thermionic converter applications

International Nuclear Information System (INIS)

Davis, P.R.; Bozack, M.J.; Swanson, L.W.

1983-01-01

Ceramic/metal composite electrode materials are of interest for thermionic energy conversion (TEC) applications for several reasons. These materials consist of submicron metal fibers or islands in an oxide matrix and therefore provide a basis for fabricating finely structured electrodes, with projecting or recessed metallic regions for more efficient electron emission or collection. Furthermore, evaporation and surface diffusion of matrix oxides may provide oxygen enhancement of cesium adsorption and work function lowering at both the collecting and emitting electrode surfaces of the TEC. Finally, the high work function oxide matrix or oxide-metal interfaces may provide efficient surface ionization of cesium for space-charge reduction in the device. The authors are investigating two types of ceramic/metal composite materials. One type is a directionally solidified eutectic consisting of a bulk oxide matrix such as UO 2 or stabilized ZrO 2 with parallel metal fibers (W) running through the oxide being exposed at the surface by cutting perpendicular to the fiber direction. The second type of material, called a surface eutectic, consists of a refractory substrate (Mo) with a thin layer of deposited and segregated material (Mo-Cr 2 O 3 -A1 2 O 3 ) on the surface. The final configuration of this layer is an oxide matrix with metallic islands scattered throughout

Cold cathode diode X-ray source

International Nuclear Information System (INIS)

Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

1983-01-01

A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

Cern DD4424 ROM Diode Matrix

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

A Diode Matrix model M792

CERN Multimedia

A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

Research and Development of a New Field Enhanced Low Temperature Thermionic Cathode that Enables Fluorescent Dimming and Loan Shedding without Auxiliary Cathode Heating

Energy Technology Data Exchange (ETDEWEB)

Feng Jin

2009-01-07

This is the final report for project entitled 'Research and development of a new field enhanced low temperature thermionic cathode that enables fluorescent dimming and load shedding without auxiliary cathode heating', under Agreement Number: DE-FC26-04NT-42329. Under this project, a highly efficient CNT based thermionic cathode was demonstrated. This cathode is capable of emitting electron at a current density two order of magnitude stronger then a typical fluorescent cathode at same temperatures, or capable of emitting at same current density but at temperature about 300 C lower than that of a fluorescent cathode. Detailed fabrication techniques were developed including CVD growth of CNTs and sputter deposition of oxide thin films on CNTs. These are mature technologies that have been widely used in industry for large scale materials processing and device fabrications, thus, with further development work, the techniques developed in this project can be scaled-up in manufacturing environment. The prototype cathodes developed in this project were tested in lighting plasma discharge environment. In many cases, they not only lit and sustain the plasma, but also out perform the fluorescent cathodes in key parameters such like cathode fall voltages. More work will be needed to further evaluate more detailed and longer term performance of the prototype cathode in lighting plasma.