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Sample records for thermally poled ge-doped

  1. Effect of nitrogen doping on the thermal conductivity of GeTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fallica, Roberto; Longo, Massimo; Wiemer, Claudia [Laboratorio MDM, IMM-CNR, Agrate Brianza (Italy); Varesi, Enrico; Fumagalli, Luca; Spadoni, Simona [Micron Semiconductor Italia, Agrate Brianza (Italy)

    2013-12-15

    The 3{omega} method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (-25%) than in the crystalline one (-40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO{sub 2}, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Secondary electron emission yield on poled silica based thick films

    DEFF Research Database (Denmark)

    Braga, D.; Poumellec, B.; Cannas, V.

    2004-01-01

    Studies on the distribution of the electric field produced by a thermal poling process in a layer of Ge-doped silica on silicon substrate, by using secondary electron emission yield (SEEY) measurements () are presented. Comparing 0 between poled and unpoled areas, the SEEY at the origin of electr...

  3. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang; Anjum, Dalaver H.; Zhang, Xixiang; Xia, Guangrui

    2016-01-01

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  4. Study of Si-Ge interdiffusion with phosphorus doping

    KAUST Repository

    Cai, Feiyang

    2016-10-28

    Si-Ge interdiffusion with phosphorus doping was investigated by both experiments and modeling. Ge/Si1-x Ge x/Ge multi-layer structures with 0.75Ge<1, a mid-1018 to low-1019 cm−3 P doping, and a dislocation density of 108 to 109 cm−2 range were studied. The P-doped sample shows an accelerated Si-Ge interdiffusivity, which is 2–8 times of that of the undoped sample. The doping dependence of the Si-Ge interdiffusion was modelled by a Fermi-enhancement factor. The results show that the Si-Ge interdiffusion coefficient is proportional to n2/n2i for the conditions studied, which indicates that the interdiffusion in a high Ge fraction range with n-type doping is dominated by V2− defects. The Fermi-enhancement factor was shown to have a relatively weak dependence on the temperature and the Ge fraction. The results are relevant to the structure and thermal processing condition design of n-type doped Ge/Si and Ge/SiGe based devices such as Ge/Si lasers.

  5. Thermoelectric Performance of Na-Doped GeSe

    NARCIS (Netherlands)

    Shaabani, Laaya; Aminorroaya-Yamini, Sima; Byrnes, Jacob; Akbar Nezhad, Ali; Blake, Graeme R

    2017-01-01

    Recently, hole-doped GeSe materials have been predicted to exhibit extraordinary thermoelectric performance owing largely to extremely low thermal conductivity. However, experimental research on the thermoelectric properties of GeSe has received less attention. Here, we have synthesized

  6. Ultrafast crystallization and thermal stability of In-Ge doped eutectic Sb70Te30 phase change material

    International Nuclear Information System (INIS)

    Lee Meiling; Miao Xiangshui; Ting Leehou; Shi Luping

    2008-01-01

    Effect of In and Ge doping in the form of In 2 Ge 8 Sb 85 Te 5 on optical and thermal properties of eutectic Sb 70 Te 30 alloys was investigated. Crystalline structure of In 2 Ge 8 Sb 85 Te 5 phase change material consists of a mixture of phases. Thermal analysis shows higher crystallization temperature and activation energy for crystallization. Isothermal reflectivity-time measurement shows a growth-dominated crystallization mechanism. Ultrafast crystallization speed of 30 ns is realized upon irradiation by blue laser beam. The use of ultrafast and thermally stable In 2 Ge 8 Sb 85 Te 5 phase change material as mask layer in aperture-type super-resolution near-field phase change disk is realized to increase the carrier-to-noise ratio and thermal stability

  7. Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

    Energy Technology Data Exchange (ETDEWEB)

    Xu, L.; Li, Y.; Yu, N. N.; Zhong, Y. P.; Miao, X. S., E-mail: miaoxs@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-01-19

    We demonstrate the impacts of Ag doping on the local atomic structure of amorphous GeTe phase-change material. The variations of phonon vibrational modes, boding nature, and atomic structure are shown by Raman, X-ray photoelectron spectroscopy, and ab initio calculation. Combining the experiments and simulations, we observe that the number of Ge atoms in octahedral site decreases and that in tetrahedral site increases. This modification in local order of GeTe originating from the low valence element will affect the crystallization behavior of amorphous GeTe, which is verified by differential scanning calorimetry and transmission electron microscope results. This work not only gives the analysis on the structural change of GeTe with Ag dopants but also provides a method to enhance the thermal stability of amorphous phase-change materials for memory and brain-inspired computing applications.

  8. Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Yu-Jen; Tsai, Min-Chuan; Wang, Chiung-Hsin; Hsieh, Tsung-Eong, E-mail: tehsieh@mail.nctu.edu.tw

    2012-02-29

    Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 Degree-Sign C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. - Highlights: Black-Right-Pointing-Pointer Ce doping increased phase-change temperature of GST from 159 to 236 Degree-Sign C. Black-Right-Pointing-Pointer No suppression of resistivity level in amorphous Ce-doped GST. Black-Right-Pointing-Pointer Resistance ratio of amorphous and crystalline Ce-doped GST was preserved at 10{sup 5}. Black-Right-Pointing-Pointer p-type semiconducting behavior of GST was enhanced by Ce-doping. Black-Right-Pointing-Pointer Ce-doping improved the thermal stability of threshold voltage of GST PCM device.

  9. Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates

    Science.gov (United States)

    Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng

    2017-09-01

    Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.

  10. Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites.

    Science.gov (United States)

    Zhao, Wenjun; Sun, Ying; Liu, Yufei; Shi, Kewen; Lu, Huiqing; Song, Ping; Wang, Lei; Han, Huimin; Yuan, Xiuliang; Wang, Cong

    2018-01-01

    Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of -285.23 × 10 -6 K -1 (192-305 K) and -1167.09 × 10 -6 K -1 (246-305 K) have been obtained in Mn 0.90 Fe 0.10 NiGe and MnNi 0.90 Fe 0.10 Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn 0.92 Fe 0.08 NiGe/ x %Cu, the CTE gradually changes from -64.92 × 10 -6 K -1 (125-274 K) to -4.73 × 10 -6 K -1 (173-229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

  11. Negative Thermal Expansion over a Wide Temperature Range in Fe-Doped MnNiGe Composites

    Directory of Open Access Journals (Sweden)

    Wenjun Zhao

    2018-02-01

    Full Text Available Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE behaviors with the coefficients of thermal expansion (CTE of −285.23 × 10−6 K−1 (192–305 K and −1167.09 × 10−6 K−1 (246–305 K have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K to −4.73 × 10−6 K−1 (173–229 K with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM state into ferromagnetic (FM state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

  12. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.

  13. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    International Nuclear Information System (INIS)

    Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li

    2013-01-01

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21  cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K

  14. Ge{sup 4+} doped TiO{sub 2} for stoichiometric degradation of warfare agents

    Energy Technology Data Exchange (ETDEWEB)

    Stengl, Vaclav, E-mail: stengl@iic.cas.cz [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Grygar, Tomas Matys [Department of Solid State Chemistry, Institute of Inorganic Chemistry AS CR v.v.i., 250 68 Rez (Czech Republic); Oplustil, Frantisek; Nemec, Tomas [Military Technical Institute of Protection Brno, Veslarska 230, 628 00 Brno (Czech Republic)

    2012-08-15

    Highlights: Black-Right-Pointing-Pointer We prepared nanodisperse Ge{sup 4+} doped titania by a novel synthesis method. Black-Right-Pointing-Pointer Synthesis does not involve organic solvents, organometallics nor thermal processes. Black-Right-Pointing-Pointer The prepared materials are efficient in removal of chemical warfare agents. Black-Right-Pointing-Pointer Ge{sup 4+} doping improves rate of removal of soman and agent VX by TiO{sub 2}. - Abstract: Germanium doped TiO{sub 2} was prepared by homogeneous hydrolysis of aqueous solutions of GeCl{sub 4} and TiOSO{sub 4} with urea. The synthesized samples were characterized by X-ray diffraction, scanning electron microscopy, EDS analysis, specific surface area (BET) and porosity determination (BJH). Ge{sup 4+} doping increases surface area and content of amorphous phase in prepared samples. These oxides were used in an experimental evaluation of their reactivity with chemical warfare agent, sulphur mustard, soman and agent VX. Ge{sup 4+} doping worsens sulphur mustard degradation and improves soman and agent VX degradation. The best degree of removal (degradation), 100% of soman, 99% of agent VX and 95% of sulphur mustard, is achieved with sample with 2 wt.% of germanium.

  15. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  16. Ge nitride formation in N-doped amorphous Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Jung, M.-C.; Lee, Y. M.; Kim, H.-D.; Kim, M. G.; Shin, H. J.; Kim, K. H.; Song, S. A.; Jeong, H. S.; Ko, C. H.; Han, M.

    2007-01-01

    The chemical state of N in N-doped amorphous Ge 2 Sb 2 Te 5 (a-GST) samples with 0-14.3 N at. % doping concentrations was investigated by high-resolution x-ray photoelectron spectroscopy (HRXPS) and Ge K-edge x-ray absorption spectroscopy (XAS). HRXPS showed negligible change in the Te 4d and Sb 4d core-level spectra. In the Ge 3d core-level spectra, a Ge nitride (GeN x ) peak developed at the binding energy of 30.2 eV and increased in intensity as the N-doping concentration increased. Generation of GeN x was confirmed by the Ge K-edge absorption spectra. These results indicate that the N atoms bonded with the Ge atoms to form GeN x , rather than bonding with the Te or Sb atoms. It has been suggested that the formation of Ge nitride results in increased resistance and phase-change temperature

  17. Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

    International Nuclear Information System (INIS)

    Beaty, J.S.; Rolfe, J.L.; Vandersande, J.; Fleurial. J.P.

    1992-01-01

    This paper reports that a theoretical model has been developed that predicts that the addition of ultra-fine, inert, phonon-scattering centers to SiGe thermoelectric material will reduce its thermal conductivity and improve its figure-of-merit. To investigate this prediction, ultra-fine particulates (20 Angstrom to 200 Angstrom) of boron nitride have been added to boron doped, p-type, 80/20 SiGe. All previous SiGe samples produced from ultra-fine SiGe powder without additions had lower thermal conductivities than standard SiGe, but high temperature (1525 K) heat treatment increased their thermal conductivity back to the value for standard SiGe. Transmission Electron Microscopy has been used to confirm the presence of occluded particulates and X-ray diffraction has been used to determine the composition to be BN

  18. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  19. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  20. Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    International Nuclear Information System (INIS)

    Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

    2013-01-01

    Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

  1. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Science.gov (United States)

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  2. Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Saito, K.; Ikushima, A.J.

    2002-01-01

    The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)

  3. Radiation resistance of GeO2-doped silica core optical fibers

    International Nuclear Information System (INIS)

    Shibata, Shuichi; Nakahara, Motohiro; Omori, Yasuharu

    1985-01-01

    Effects of hlogen addition to silica glass on the loss in optical fibers are examined by using halogen-free, chlorine-containing and fluorine-containing GeO 2 -doped silica core optical fibers. Measurements are made for dependence of induced loss in these optical fibers on various factors such as wavelength and total dose of gamma radiation as well as GeO 2 content. Ultraviolet absorption spectra are also observed. In addition, effects of halogens added to pure silica fibers are considered on the basis of Raman spectra of three different optical fibers (pure, F-doped, and F- and GeO 2 -codoped silica core). Thus, it is concluded that (1) addition of halogens (F and Cl) serves to decrease GeO defects and Ge(3) defects in GeO 2 -doped silica optical fibers ; (2) addition of halogens suppresses the increase in loss in GeO 2 -doped silica optical fibers induced by gamma radiation ; and (3) there are close relations between the increase in loss induced by gamma radiation and defects originally existing in the fibers. Effects of halogens added to GeO 2 -doped and pure silica optical fibers can be explained on the basis of the latter relations. (Nogami, K.)

  4. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    International Nuclear Information System (INIS)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Vincent, B.; Gencarelli, F.; Clarysse, T.; Vandervorst, W.; Caymax, M.; Loo, R.; Jensen, A.; Petersen, D.H.; Zaima, S.

    2012-01-01

    We have investigated the Ga and Sn content dependence of the crystallinity and electrical properties of Ga-doped Ge 1-x Sn x layers that are heteroepitaxially grown on Ge(001) substrates. The doping of Ga to levels as high as the solubility limit of Ga at the growth temperature leads to the introduction of dislocations, due to the increase in the strain of the Ge 1-x Sn x layers. We achieved the growth of a fully strained Ge 0.922 Sn 0.078 layer on Ge with a Ga concentration of 5.5 × 10 19 /cm 3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge 1-x Sn x layer decreased as the Sn content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge 1-x Sn x epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge 0.950 Sn 0.050 layer annealed at 600°C for 1 min is 3.6 times less than that of the Ga-doped Ge/Ge sample. - Highlights: ► Heavy Ga-doping into fully strained GeSn layers without the introduction of dislocations ► The uniform Ga depth profile allowed the introduction of Sn ► The decrease in resistivity with an increase in the activation level of Ga was caused by the introduction of Sn

  5. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  6. Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

    Science.gov (United States)

    Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

    2018-06-01

    The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

  7. Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru; Antonov, A. V.; Drozdov, M. N.; Schmagin, V. B.; Novikov, A. V. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod (Russian Federation); Spirin, K. E. [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)

    2015-10-14

    Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb segregation ratio in Ge on growth temperature was revealed experimentally and modeled theoretically taking into account both the terrace-mediated and step-edge-mediated segregation mechanisms. A nearly 5-orders-of-magnitude increase in the Sb segregation ratio in a relatively small temperature range of 180–350 °C was obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries and high crystalline quality using the temperature switching method that was proposed earlier for Si-based structures. This technique was employed for fabrication of different kinds of n-type Ge structures which can be useful for practical applications like heavily doped n{sup +}-Ge films or δ-doped layers. Estimation of the doping profiles sharpness yielded the values of 2–5 nm per decade for the concentration gradient at the leading edge and 2–3 nm for the full-width-half-maximum of the Ge:Sb δ-layers. Electrical characterization of grown Ge:Sb structures revealed nearly full electrical activation of Sb atoms and the two-dimensional nature of charge carrier transport in δ-layers.

  8. Ex situ n+ doping of GeSn alloys via non-equilibrium processing

    Science.gov (United States)

    Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

    2018-06-01

    Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

  9. Flat Ge-doped optical fibres for food irradiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N. Mohd; Jusoh, M. A. [Department of Imaging, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Razis, A. F. Abdull [Food Safety Research Centre, Faculty of Food Science and Technology, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Laboratory of UPM-MAKNA Cancer Research, Institute of Bioscience, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Alawiah, A. [Faculty of Engineering and Technology, Multimedia University, 75450 Malacca (Malaysia); Bradley, D. A. [Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  10. Flat Ge-doped optical fibres for food irradiation dosimetry

    International Nuclear Information System (INIS)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-01-01

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%

  11. Phase change behaviors of Zn-doped Ge2Sb2Te5 films

    International Nuclear Information System (INIS)

    Wang Guoxiang; Nie Qiuhua; Shen Xiang; Fu Jing; Xu Tiefeng; Dai Shixun; Wang, R. P.; Wu Liangcai

    2012-01-01

    Zn-doped Ge 2 Sb 2 Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16 (Ge 2 Sb 2 Te 5 ) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2 Sb 2 Te 5 . The proper Zn atom added into Ge 2 Sb 2 Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

  12. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.; Hsu, W.; James, J.; Onyegam, E. U.; Guchhait, S.; Banerjee, S. K.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm

  13. Magnetocaloric effect and negative thermal expansion in hexagonal Fe doped MnNiGe compounds with a magnetoelastic AFM-FM-like transition.

    Science.gov (United States)

    Xu, Kun; Li, Zhe; Liu, Enke; Zhou, Haichun; Zhang, Yuanlei; Jing, Chao

    2017-01-30

    We report a detailed study of two successive first-order transitions, including a martensitic transition (MT) and an antiferromagnetic (AFM)-ferromagnetic (FM)-like transition, in Mn 1-x Fe x NiGe (x = 0, 0.06, 0.11) alloys by X-ray diffraction, differential scanning calorimetry, magnetization and linear thermal expansion measurements. Such an AFM-FM-like transition occurring in the martensitic state has seldom been observed in the M(T) curves. The results of Arrott plot and linear relationship of the critical temperature with M 2 provide explicit evidence of its first-order magnetoelastic nature. On the other hand, their performances as magnetocaloric and negative thermal expansion materials were characterized. The isothermal entropy change for a field change of 30 kOe reaches an impressive value of -25.8 J/kg K at 203 K for x = 0.11 compared to the other two samples. It demonstrates that the magneto-responsive ability has been significantly promoted since an appropriate amount of Fe doping can break the local Ni-6Mn AFM configuration. Moreover, the Fe-doped samples reveal both the giant negative thermal expansion and near-zero thermal expansion for different temperature ranges. For instance, the average thermal expansion coefficient ā of x = 0.06 reaches -60.7 × 10 -6 /K over T = 231-338 K and 0.6 × 10 -6 /K over T = 175-231 K during cooling.

  14. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan

    2018-04-03

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  15. Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

    KAUST Repository

    Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

    2018-01-01

    Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown, annealed and characterized by several different material characterization methods. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. B doped Ge films have threading dislocations above 1 × 10 cm, while P and As doping can reduce the threading dislocation density to be less than 10 cm without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x range was established including the dislocationmediated diffusion. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications.

  16. Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

    International Nuclear Information System (INIS)

    Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

    2015-01-01

    The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

  17. Effects of Ge- and Sb-doping and annealing on the tunable bandgaps of SnS films

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Hsuan-Tai; Chiang, Ming-Hung; Huang, Chen-Hao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Wen-Tai, E-mail: wtlin@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Fu, Yaw-Shyan [Department of Greenergy, National University of Tainan, Tainan 700, Taiwan (China); Guo, Tzung-Fang [Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China)

    2015-06-01

    SnS, Ge- and Sb-doped SnS films with single orthorhombic SnS phase were fabricated via solvothermal routes and subsequent spin-coating, respectively. The substitution solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. The bandgaps of Ge- and Sb-doped SnS films can be tuned in the ranges of 1.25–1.35 and 1.30–1.39 eV, respectively. The possible mechanisms for the tunable bandgaps of Ge- and Sb-doped SnS films are discussed. For the Ge- and Sb-doped SnS films subjected to annealing at 200–350 °C in N{sub 2}, the bandgaps of 200 °C-annealed films remain unchanged, while those of 300 °C- and 350 °C-annealed films decrease with the annealing temperature because of the evaporation of Ge and Sb respectively. - Highlights: • Ge- and Sb-doped SnS films were fabricated via spin-coating. • The solubilities of Ge and Sb in SnS are about 6 and 5 at.%, respectively. • The bandgaps of SnS films can be tuned by Ge and Sb doping respectively. • Annealing above 300 °C reduces the bandgaps of Ge- and Sb-doped SnS films.

  18. Characterization of Ge-doped optical fibres for MV radiotherapy dosimetry

    International Nuclear Information System (INIS)

    Noor, Noramaliza M.; Hussein, M.; Kadni, T.; Bradley, D.A.; Nisbet, A.

    2014-01-01

    Ge-doped optical fibres offer promising thermoluminescence (TL) properties together with small physical size and modest cost. Their use as dosimeters for postal radiotherapy dose audits of megavoltage photon beams has been investigated. Key dosimetric characteristics including reproducibility, linearity, dose rate, temperature and angular dependence have been established. A methodology of measuring absorbed dose under reference conditions was developed. The Ge-doped optical fibres offer linearity between TL yield and dose, with a reproducibility of better than 5%, following repeated measurements (n=5) for doses from 5 cGy to 1000 cGy. The fibres also offer dose rate, angular and temperature independence, while an energy-dependent response of 7% was found over the energy range 6 MV to 15 MV (TPR 20,10 of 0.660, 0.723 and 0.774 for 6, 10 and 15 MV respectively). The audit methodology has been developed with an expanded uncertainty of 4.22% at 95% confidence interval for the photon beams studied. - Highlights: • We investigate dosimetric characteristics of commercial Ge-doped optical fibres. • We develop audit methodology for measuring absorbed dose under reference conditions. • Ge-doped optical fibres offer promising thermoluminescence (TL) properties. • Audit methodology has been developed with an expanded uncertainty of 4.22%

  19. Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material

    International Nuclear Information System (INIS)

    Zhang, Linchuan; Sa, Baisheng; Zhou, Jian; Sun, Zhimei; Song, Zhitang

    2014-01-01

    GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

  20. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  1. Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

    Science.gov (United States)

    Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

    2016-05-01

    Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit

  2. Electronic structure of O-doped SiGe calculated by DFT + U method

    Science.gov (United States)

    Zhao, Zong-Yan; Yang, Wen; Yang, Pei-Zhi

    2016-12-01

    To more in depth understand the doping effects of oxygen on SiGe alloys, both the micro-structure and properties of O-doped SiGe (including: bulk, (001) surface, and (110) surface) are calculated by DFT + U method in the present work. The calculated results are as follows. (i) The (110) surface is the main exposing surface of SiGe, in which O impurity prefers to occupy the surface vacancy sites. (ii) For O interstitial doping on SiGe (110) surface, the existences of energy states caused by O doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. (iii) The finding about decreased surface work function of O-doped SiGe (110) surface can confirm previous experimental observations. (iv) In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-SiGe-based solar cells in the future. Project supported by the Natural Science Foundation of Yunnan Province, China (Grant No. 2015FB123), the 18th Yunnan Province Young Academic and Technical Leaders Reserve Talent Project, China (Grant No. 2015HB015), and the National Natural Science Foundation of China (Grant No. U1037604).

  3. Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfO{sub x} films

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y.; Zhang, S.Y.; Zhang, T.; Wang, R.X.; Li, L.T.; Zhang, Y. [Southwest University, School of Physical Science and Technology, Chongqing (China); Dai, J.Y. [The Hong Kong Polytechnic University, Department of Applied Physics, Hong Kong (China)

    2016-09-15

    Amorphous Ge-doped HfO{sub x} films have been deposited on p-Si(100) substrates by means of RF magnetron sputtering. Microstructural investigations reveal the partial oxidation of doped Ge atoms in the amorphous HfO{sub x} matrix and the existence of HfSiO{sub x} interfacial layer. Capacitance-voltage hysteresis of the Ag-/Ge-doped HfO{sub x}/Si/Ag memory capacitor exhibits a memory window of 3.15 V which can maintain for >5 x 10{sup 4} cycles. Current-voltage characteristics reveal that Poole-Frenkel tunneling is responsible for electron transport in the Ge-doped HfO{sub x} film. (orig.)

  4. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  5. Thermal poling of multi-wire array optical fiber

    DEFF Research Database (Denmark)

    Huang, Lin; An, Honglin; Hayashi, Juliano G.

    2018-01-01

    We demonstrate in this paper thermal poling of multi-wire array fibers, which extends poling of fibers with two anodes to similar to 50 and similar to 500 wire array anodes. The second harmonic microscopy observations show that second order nonlinearity (SON) layers are developed surrounding all...... the rings of wires in the similar to 50 anode array fiber with poling of 1.8kV, 250 degrees C and 30min duration, and the outer rings of the similar to 500 anode array fiber at lower poling temperature. Our simulations based on a two-dimensional charge dynamics model confirm this can be explained...

  6. The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

    International Nuclear Information System (INIS)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

    2013-01-01

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

  7. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  8. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  9. Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers

    International Nuclear Information System (INIS)

    Bogumilowicz, Y.; Hartmann, J.M.

    2014-01-01

    We have studied the in-situ boron (B) doping of germanium (Ge) and silicon (Si) in Reduced Pressure-Chemical Vapor Deposition. Three growth temperatures have been investigated for the B-doping of Ge: 400, 600 and 750 °C at a constant growth pressure of 13300 Pa (i.e. 100 Torr). The B concentration in the Ge:B epilayer increases linearly with the diborane concentration in the gaseous phase. Single-crystalline Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. For the in-situ B doping of Si at 850 °C, two dichlorosilane mass flow ratios (MFR) have been assessed: F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0025 and F[SiH 2 Cl 2 ]/F[H 2 ] = 0.0113 at a growth pressure of 2660 Pa (i.e. 20 Torr). Linear boron incorporation with the diborane concentration in the gas phase has been observed and doping levels in-between 3.5 ∙ 10 17 and 1 ∙ 10 20 cm −3 were achieved. We almost kept the same ratio of B versus Si atoms in the gas phase and in the Si epilayer. By contrast, roughly half of the B atoms present in the gas phase were incorporated in the Ge:B layers irrespective of the growth temperature. X-Ray Diffraction (XRD) allowed us to extract from the angular position of the Ge:B layer diffraction peak the substitutional B concentration. Values close to the B concentrations obtained by 4-probe resistivity measurements were obtained. Ge:B layers were smooth (< 1 m root mean square roughness associated with 20 × 20 μm 2 Atomic Force Microscopy images). Only for high F[B 2 H 6 ]/F[GeH 4 ] MFR (3.2 10 −3 ) did the Ge:B layers became rough; they were however still mono-crystalline (XRD). Above this MFR value, Ge:B layers became polycrystalline. - Highlights: • Boron doping of germanium and silicon in Reduced Pressure-Chemical Vapor Deposition • Linear boron incorporation in Ge:B and Si:B with the diborane flow • Single-crystal Ge:B layers with B concentrations in-between 9 ∙ 10 17 and 1 ∙ 10 20 cm −3 • Single-crystal Si

  10. Oxidation-resistant Ge-doped silicide coating on Cr-Cr2Nb alloys by pack cementation

    International Nuclear Information System (INIS)

    He Yirong

    1997-01-01

    The halide-activated pack cementation process was modified to produce a Ge-doped silicide diffusion coating on Cr-Cr 2 Nb alloys in a single processing step. The morphology and composition of the coating depended both on the pack composition and processing schedule and also on the composition and microstructure of the substrate. Higher Ge content in the pack suppressed the formation of CrSi 2 and reduced the growth kinetics of the coating. Ge was not homogeneously distributed in the coatings. Under cyclic and isothermal oxidation conditions, the Ge-doped silicide coating protected the Cr-Nb alloys from significant oxidation and from pesting by the formation of a Ge-doped silica film. (orig.)

  11. Stress-Induced Crystallization of Ge-Doped Sb Phase-Change Thin Films

    NARCIS (Netherlands)

    Eising, Gert; Pauza, Andrew; Kooi, Bart J.

    The large effects of moderate stresses on the crystal growth rate in Ge-doped Sb phase-change thin films are demonstrated using direct optical imaging. For Ge6Sb94 and Ge7Sb93 phase-change films, a large increase in crystallization temperature is found when using a polycarbonate substrate instead of

  12. Thermal conductivity of sputtered amorphous Ge films

    International Nuclear Information System (INIS)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-01-01

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids

  13. Electron irradiation response on Ge and Al-doped SiO{sub 2} optical fibres

    Energy Technology Data Exchange (ETDEWEB)

    Yaakob, N.H.; Wagiran, H. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Hossain, I., E-mail: imamhossain@utm.m [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ramli, A.T. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Bradley, D.A [Department of Physics, University of Surrey, Guildford GU2 7XH (United Kingdom); Hashim, S. [Department of Physics, Universiti Teknologi Malaysia, 81310 Skudai, Johor Darul Takzim (Malaysia); Ali, H. [Department of Radiotherapy and Oncology, Hospital Sultan Ismail, Johor Darul Takzim (Malaysia)

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO{sub 2} optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO{sub 2} optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  14. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer

    KAUST Repository

    Mantey, J.

    2013-01-01

    Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer. © 2013 AIP Publishing LLC.

  15. Thermal Stability and Optical Activity of Erbium Doped Chalcogenide Glasses for Photonics

    Science.gov (United States)

    Tonchev, D.; Koughia, K.; Kasap, S. O.; Maeda, K.; Sakai, T.; Ikuta, J.; Ivanova, Z. G.

    The glass transition and crystallization temperatures (T g , T c ), heat capacity, thermal stability and glass uniformity of GeSGa, GeSeGa, Ge(SeTe)Ga chalcogenide glasses doped with Er3+ by the addition of Er2S3 have been investigated by conventional differential scanning calorimetry (DSC) and Temperature-Modulated DSC (TMDSC). While some of the glasses have two crystallization peaks, these glasses were nonetheless optically actively and uniform. Essential optical properties have been evaluated, such as the photoluminescence (PL) intensity and lifetime as a function of the glass composition. We present typical results to emphasize some of the important characteristics of these systems and discuss trends within a glass system; and also highlight differences between glass systems.

  16. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  17. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

    International Nuclear Information System (INIS)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi; Liu, Bo; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin; Huo, Ruru

    2015-01-01

    Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge 2 Sb 2 Te 5 (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr 10 (Ge 2 Sb 2 Te 5 ) 90 (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention

  18. Thermoluminescence characteristics of Ge-doped optical fibers with different dimensions for radiation dosimetry

    International Nuclear Information System (INIS)

    Begum, Mahfuza; Rahman, A.K.M. Mizanur; Abdul-Rashid, H.A.; Yusoff, Z.; Begum, Mahbuba; Mat-Sharif, K.A.; Amin, Y.M.; Bradley, D.A.

    2015-01-01

    Important thermoluminescence (TL) properties of five (5) different core sizes Ge-doped optical fibers have been studied to develop new TL material with better response. These are drawn from same preform applying different speed and tension during drawing phase to produce Ge-doped optical fibers with five (5) different core sizes. The results of the investigations are also compared with most commonly used standard TLD-100 chips (LiF:Mg,Ti) and commercial multimode Ge-doped optical fiber (Yangtze Optical Fiber, China). Scanning Electron Microscope (SEM) and EDX analysis of the fibers are also performed to map Ge distribution across the deposited region. Standard Gamma radiation source in Secondary Standard Dosimetry Lab (SSDL) was used for irradiation covering dose range from 1 Gy to 10 Gy. The essential dosimetric parameters that have been studied are TL linearity, reproducibility and fading. Prior to irradiation all samples ∼0.5 cm length are annealed at temperature of 400 °C for 1 h period to standardize their sensitivities and background. Standard TLD-100 chips are also annealed for 1 h at 400 °C and subsequently 2 h at 100 °C to yield the highest sensitivity. TL responses of these fibers show linearity over a wide gamma radiation dose that is an important property for radiation dosimetry. Among all fibers used in this study, 100 μm core diameter fiber provides highest response that is 2.6 times than that of smallest core (20 μm core) optical fiber. These fiber-samples demonstrate better response than commercial multi-mode optical fiber and also provide low degree of fading about 20% over a period of fifteen days for gamma radiation. Effective atomic number (Z eff ) is found in the range (13.25–13.69) which is higher than soft tissue (7.5) however within the range of human-bone (11.6–13.8). All the fibers can also be re-used several times as a detector after annealing. TL properties of the Ge-doped optical fibers indicate promising applications in

  19. Strange resonance poles from Kπ scattering below 1.8 GeV

    Energy Technology Data Exchange (ETDEWEB)

    Pelaez, J.R.; Rodas, A. [Universidad Complutense de Madrid, Departamento de Fisica Teorica II, Madrid (Spain); Ruiz de Elvira, J. [Universitaet Bonn, Helmholtz-Institut fuer Strahlen- und Kernphysik (Theorie) and Bethe Center for Theoretical Physics, Bonn (Germany); University of Bern, Albert Einstein Center for Fundamental Physics, Institute for Theoretical Physics, Bern (Switzerland)

    2017-02-15

    In this work we present a determination of the mass, width, and coupling of the resonances that appear in kaon-pion scattering below 1.8 GeV. These are: the much debated scalar κ-meson, nowadays known as K{sub 0}{sup *}(800), the scalar K{sub 0}{sup *}(1430), the K*(892) and K{sub 1}{sup *}(1410) vectors, the spin-two K{sub 2}{sup *}(1430) as well as the spin-three K{sup *}{sub 3}(1780). The parameters will be determined from the pole associated to each resonance by means of an analytic continuation of the Kπ scattering amplitudes obtained in a recent and precise data analysis constrained with dispersion relations, which were not well satisfied in previous analyses. This analytic continuation will be performed by means of Pade approximants, thus avoiding a particular model for the pole parameterization. We also pay particular attention to the evaluation of uncertainties. (orig.)

  20. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  1. Poling effect of a charge-trapping layer in glass waveguides

    DEFF Research Database (Denmark)

    Ren, Yitao; Marckmann, Carl Johan; Jacobsen, Rune Shim

    2004-01-01

    Germanium-doped multi-layer waveguides containing a silicon oxy-nitride layer as a charge trapper are thermally poled in an air environment. Compared to the waveguides without the trapping layer, the induced linear electro-optic coefficient increases more than 20%. A comparable rise in the intern...

  2. Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x-yGe xC y film deposited by ultraclean LPCVD

    International Nuclear Information System (INIS)

    Shim, Hyunyoung; Sakuraba, Masao; Murota, Junichi

    2006-01-01

    The effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline (poly) Si 1-x -y Ge x C y films was investigated. Poly-Si 1-x -y Ge x C y films were deposited on thermally oxidized Si(100) at 500-650 deg. C in a SiH 4 -GeH 4 -SiH 3 CH 3 -H 2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition. B and P were doped into the films by ion implantation and diffusion by heat-treatment. The electrical properties are characterized by grain size, width of disordered region near grain boundaries, carrier trap density and the amount of impurity segregation at grain boundaries. In the B-doped poly-Si 1-x -y Ge x C y films heat-treated at 900 deg. C, the increase of carrier concentration n poly and the decrease of resistivity ρ poly with Ge addition are caused by the narrowing of the width of disordered regions, i.e., crystallization of disordered regions induced by Ge atoms. The decrease of n poly and the increase of ρ poly with C addition are explained by the suppression of crystallization of disordered region due to C atom segregation at grain boundaries. In the P-doped poly-Si 1-x -y Ge x C y films, it is found that n poly and ρ poly are influenced by P atom segregation at grain boundaries due to lowering solid solubility of P in grain by the existence of Ge

  3. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  4. Elevated transition temperature in Ge doped VO2 thin films

    Science.gov (United States)

    Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

    2017-07-01

    Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

  5. Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis

    Science.gov (United States)

    Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro

    2018-04-01

    The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.

  6. The thermoluminescence response of Ge-doped flat fibre for proton beam measurements: A preliminary study

    International Nuclear Information System (INIS)

    Hassan, M F; Fadzil, M S Ahmad; Noor, N Mohd; Abdul Rahman, W N Wan; Tominaga, T; Geso, M; Akasaka, H; Bradley, D A

    2017-01-01

    The aim of this study was to investigate the thermoluminescence (TL) response of fabricated 2.3 mol% and 6.0 mol% germanium (Ge) doped flat optical fibres to proton irradiation. The fundamental dosimetric characteristics of the fibres have been investigated including dose linearity, reproducibility and fading. The thermoluminescent dosimeters (TLDs) were used as a reference dosimeter to allow the relative response of the fibres. The results show that Ge-doped flat fibres offer excellent dose linearity over the dose range from 1 Gy up to 10 Gy with correlation of determination (R 2 ) of 0.99. The fibres also demonstrated good reproducibility within the standard deviation (SD) of 0.86% to 6.41%. After 96 days post-irradiation, TLD-100 chips gave rise to the least loss in TL signal at around 18% followed by fabricated 2.3 mol% Ge-doped flat fibres about 24%. This preliminary study has demonstrated that the proposed fabricated Ge-doped flat fibre offers a promising potential for use in proton beam measurements. (paper)

  7. The composition dependence of magnetic, electronic and optical properties of Mn-doped SixGe1-x nanowires

    Science.gov (United States)

    Wei, Jianglin; Lan, Mu; Zhang, Xi; Xiang, Gang

    2017-07-01

    Mn-doped SixGe1-x nanowires (NWs) with different Ge concentrations have been studied by first-principles calculations. It is found that the spin dependent energy bands of the NWs show rich variations both in bandgap width and type (from indirect to direct) as the Ge concentration changes. The Mn-doped SixGe1-x NWs exhibit half-metallic characteristics for all Ge concentrations, and the ground states of the NWs are found to be ferromagnetic (FM). The net magnetization mapping and spin density of states calculations reveal that Mn 3d electrons have a strong hybridization effect with nearest Ge 4p electrons, which results in the Ge’s nontrivial contribution to the magnetic moment of the NWs. Further magnon dispersion studies show that the magnetic order stability of the NWs is influenced by Ge concentrations. Finally, the dependence of the optical properties of the magnetic NWs on the Ge concentration is demonstrated. Our results suggest that Mn-doped SixGe1-x NWs may be useful in spintronic and optoelectronic devices.

  8. Simulation of hole-mobility in doped relaxed and strained Ge layers

    Science.gov (United States)

    Watling, Jeremy R.; Riddet, Craig; Chan, Morgan Kah H.; Asenov, Asen

    2010-11-01

    As silicon based metal-oxide-semiconductor field-effect transistors (MOSFETs) are reaching the limits of their performance with scaling, alternative channel materials are being considered to maintain performance in future complementary metal-oxide semiconductor technology generations. Thus there is renewed interest in employing Ge as a channel material in p-MOSFETs, due to the significant improvement in hole mobility as compared to Si. Here we employ full-band Monte Carlo to study hole transport properties in Ge. We present mobility and velocity-field characteristics for different transport directions in p-doped relaxed and strained Ge layers. The simulations are based on a method for over-coming the potentially large dynamic range of scattering rates, which results from the long-range nature of the unscreened Coulombic interaction. Our model for ionized impurity scattering includes the affects of dynamic Lindhard screening, coupled with phase-shift, and multi-ion corrections along with plasmon scattering. We show that all these effects play a role in determining the hole carrier transport in doped Ge layers and cannot be neglected.

  9. Oxygen transport and GeO2 stability during thermal oxidation of Ge

    Science.gov (United States)

    da Silva, S. R. M.; Rolim, G. K.; Soares, G. V.; Baumvol, I. J. R.; Krug, C.; Miotti, L.; Freire, F. L.; da Costa, M. E. H. M.; Radtke, C.

    2012-05-01

    Oxygen transport during thermal oxidation of Ge and desorption of the formed Ge oxide are investigated. Higher oxidation temperatures and lower oxygen pressures promote GeO desorption. An appreciable fraction of oxidized Ge desorbs during the growth of a GeO2 layer. The interplay between oxygen desorption and incorporation results in the exchange of O originally present in GeO2 by O from the gas phase throughout the oxide layer. This process is mediated by O vacancies generated at the GeO2/Ge interface. The formation of a substoichiometric oxide is shown to have direct relation with the GeO desorption.

  10. Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

    Science.gov (United States)

    Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

    2015-11-16

    Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

  11. Thermal transport property of Ge34 and d-Ge investigated by molecular dynamics and the Slack's equation

    International Nuclear Information System (INIS)

    Han-Fu, Wang; Wei-Guo, Chu; Yan-Jun, Guo; Hao, Jin

    2010-01-01

    In this study, we evaluate the values of lattice thermal conductivity κ L of type II Ge clathrate (Ge 34 ) and diamond phase Ge crystal (d-Ge) with the equilibrium molecular dynamics (EMD) method and the Slack's equation. The key parameters of the Slack's equation are derived from the thermodynamic properties obtained from the lattice dynamics (LD) calculations. The empirical Tersoff's potential is used in both EMD and LD simulations. The thermal conductivities of d-Ge calculated by both methods are in accordance with the experimental values. The predictions of the Slack's equation are consistent with the EMD results above 250 K for both Ge 34 and d-Ge. In a temperature range of 200–1000 K, the κ L value of d-Ge is about several times larger than that of Ge 34 . (condensed matter: structure, thermal and mechanical properties)

  12. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

    Science.gov (United States)

    Simov, K. R.; Glans, P.-A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

    2018-01-01

    Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn-Mn bonding.

  13. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

    DEFF Research Database (Denmark)

    Shimura, Y.; Takeuchi, S.; Nakatsuka, O.

    2012-01-01

    to the introduction of dislocations, due to the increase in the strain of the Ge1-xSnx layers. We achieved the growth of a fully strained Ge0.922Sn0.078 layer on Ge with a Ga concentration of 5.5×1019 /cm3 without any dislocations and stacking faults. The resistivity of the Ga-doped Ge1-xSnx layer decreased as the Sn...... content was increased. This decrease was due to an increase in the carrier concentration, with an increase in the activation level of Ga atoms in the Ge1-xSnx epitaxial layers being induced by the introduction of Sn. As a result, we found that the resistivity for the Ge0.950Sn0.050 layer annealed at 600°C...

  14. Junction-less poly-Ge FinFET and charge-trap NVM fabricated by laser-enabled low thermal budget processes

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Wen-Hsien; Shen, Chang-Hong; Wang, Hsing-Hsiang; Yang, Chih-Chao; Hsieh, Tung-Ying; Hsieh, Jin-Long; Yeh, Wen-Kuan [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Huang, Tzu-En [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

    2016-06-13

    A doping-free poly-Ge film as channel material was implemented by CVD-deposited nano-crystalline Ge and visible-light laser crystallization, which behaves as a p-type semiconductor, exhibiting holes concentration of 1.8 × 10{sup 18 }cm{sup −3} and high crystallinity (Raman FWHM ∼ 4.54 cm{sup −1}). The fabricated junctionless 7 nm-poly-Ge FinFET performs at an I{sub on}/I{sub off} ratio over 10{sup 5} and drain-induced barrier lowering of 168 mV/V. Moreover, the fast programming speed of 100 μs–1 ms and reliable retention can be obtained from the junctionless poly-Ge nonvolatile-memory. Such junctionless poly-Ge devices with low thermal budget are compatible with the conventional CMOS technology and are favorable for 3D sequential-layer integration and flexible electronics.

  15. Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2017-02-15

    Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Structural and compositional evolution of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} film under different annealing conditions

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ki-Hong; Kyoung, Yong-Koo; Yun, Dong-Jin [AS group, CAS center, SAIT, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of); Choi, Sang-Jun, E-mail: sangjun5545.choi@samsung.com [Device Architecture Lab, Semiconductor R and D center, Samsung Electronics Co. Ltd., Yongin 446-712 (Korea, Republic of)

    2013-12-02

    Changes in the microstructural and electrical properties of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} during thermal annealing under N{sub 2} and air atmospheres are investigated. The occurrence of compositional and structural changes was found to depend on the annealing conditions, and in particular, on the out-diffusion of germanium atoms. The thick oxidation layer generated during air annealing prevented germanium out-diffusion, leading to structural changes but no compositional changes. In contrast, germanium out-diffusion occurred during annealing under N{sub 2}, leading to compositional changes but preventing structural changes. - Highlights: • We investigate the stability of 10% carbon-doped Ge2Sb2Te5 alloys. • The compositional and structural changes depend on the annealing conditions. • Germanium out-diffusion occurs during N2 annealing, leading to compositional changes. • The oxidation layer generated during air annealing prevents germanium out-diffusion.

  17. The nitrogen doping effect on the properties of Ge-In-Sb-Te phase-change recording media investigated by blue-light laser

    International Nuclear Information System (INIS)

    Yeh, T.-T.; Hsieh, T.-E.; Shieh, H.-P.D.

    2005-01-01

    This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge-In-Sb-Te (GIST) phase-change material when irradiated by blue-light laser. The experimental results showed that nitrogen doping at the condition of N 2 /Ar sputtering gas flow ratio equals to 3% might enhance the recrystallization speed of GIST recording layer up to 1.5 times. However, the disk failed when too much nitrogen (N 2 /Ar ≥ 5.0%) was introduced. The data obtained by differential scanning calorimetry, X-ray diffraction and ellipsometry revealed changes of thermal and optical properties due to the nitrogen doping in GIST. When appropriate amount of nitrogen was added, the activation energy (E a ) of amorphous-crystalline phase transition of GIST decreased and the optical constants of amorphous and crystalline phases (except the k value of amorphous phase) gradually reduced with the increase of wavelength in the range of 600-750 nm. Modulation simulation based on the reflectively of doped GIST layers obtained from static test indicated that appropriate nitrogen doping benefited the signal characteristics of optical disks. Transmission electron microscopy observed numerous tiny precipitates uniformly distributed in the doped GIST layers. These were believed to be nitride particles generated by nitrogen doping that might offer the preferential sites for amorphous-crystalline phase transition so that the recrystallization speed was accelerated

  18. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge

    Directory of Open Access Journals (Sweden)

    K. R. Simov

    2018-01-01

    Full Text Available Mn doping of group-IV semiconductors (Si/Ge is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

  19. Crystallization behavior of Ge-doped eutectic Sb70Te30 films in optical disks

    International Nuclear Information System (INIS)

    Khulbe, Pramod K.; Hurst, Terril; Mansuripur, Masud; Horie, Michikazu

    2002-01-01

    We report laser-induced crystallization behavior of binary Sb-Te and ternary Ge-doped eutectic Sb70Te30 thin film samples in a typical quadrilayer stack as used in phase-change optical disk data storage. Several experiments have been conducted on a two-laser static tester in which one laser operating in pulse mode writes crystalline marks on amorphous film or amorphous marks on crystalline film, while the second laser operating at low-power cw mode simultaneously monitors the progress of the crystalline or amorphous mark formation in real time in terms of the reflectivity variation. The results of this study show that the crystallization kinetics of this class of film is strongly growth dominant, which is significantly different from the crystallization kinetics of stochiometric Ge-Sb-Te compositions. In Sb-Te and Ge-doped eutectic Sb70Te30 thin-film samples, the crystallization behavior of the two forms of amorphous states, namely, as-deposited amorphous state and melt-quenched amorphous state, remains approximately same. We have also presented experiments showing the effect of the variation of the Sb/Te ratio and Ge doping on the crystallization behavior of these films

  20. The metallization of Ge-doped plastics

    International Nuclear Information System (INIS)

    Huser, G.; Recoules, V.; Salin, G.; Galmiche, D.; Ozaki, N.; Miyanishi, K.; Kodama, R.; Sano, T.; Sakawa, Y.

    2013-01-01

    Ge-doped plastics are used in inertial fusion targets. Doped plastics are complex mixtures and the validation of their properties in a broad range of thermodynamic conditions requires an experimental validation. The metallization of plastics appears when shock waves generated by power lasers create pressures around 10 6 bar and temperatures around 10.000 K. The shock front propagating in the plastic becomes reflective. We have performed experiments to test the mathematical models describing the compressibility of such materials. We have compared the Thomas-Fermi model that is implemented in the QEOS formalism (Quotidian Equation of State) with 2 other models: the Sommerfeld metal model and a model that allows the closure of the semi-conducting gap. It appears that the Thomas-Fermi model predicts satisfactorily the compressibility of a mixture compressed at a few 10 6 bars, but over-estimates the average ionisation by a factor up to 10 which leads to an over-estimation of the metallization step

  1. Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

    Science.gov (United States)

    Flores, Mauricio A.

    2018-01-01

    We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

  2. Phosphorus atomic layer doping in SiGe using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Heinemann, Bernd; Murota, Junichi; Tillack, Bernd

    2014-01-01

    Phosphorus (P) atomic layer doping in SiGe is investigated at temperatures between 100 °C to 600 °C using a single wafer reduced pressure chemical vapor deposition system. SiGe(100) surface is exposed to PH 3 at different PH 3 partial pressures by interrupting SiGe growth. The impact of the SiGe buffer/cap growth condition (total pressure/SiGe deposition precursors) on P adsorption, incorporation, and segregation are investigated. In the case of SiH 4 -GeH 4 -H 2 gas system, steeper P spikes due to lower segregation are observed by SiGe cap deposition at atmospheric (ATM) pressure compared with reduced pressure (RP). The steepness of P spike of ∼ 5.7 nm/dec is obtained for ATM pressure without reducing deposition temperature. This result may be due to the shift of equilibrium of P adsorption/desorption to desorption direction by higher H 2 pressure. Using Si 2 H 6 -GeH 4 -H 2 gas system for SiGe cap deposition in RP, lowering the SiGe growth temperature is possible, resulting in higher P incorporation and steeper P profile due to reduced desorption and segregation. In the case of Si 2 H 6 -GeH 4 -H 2 gas system, the P dose could be simulated assuming a Langmuir-type kinetics model. Incorporated P shows high electrical activity, indicating P is adsorbed mostly in lattice position. - Highlights: • Phosphorus (P) atomic layer doping in SiGe (100) is investigated using CVD. • P adsorption is suppressed by the hydrogen termination of Ge surface. • By SiGe cap deposition at atmospheric pressure, P segregation was suppressed. • By using Si 2 H 6 -based SiGe cap, P segregation was also suppressed. • The P adsorption process is self-limited and follows Langmuir-type kinetics model

  3. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping.

    Science.gov (United States)

    Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi

    2012-02-02

    Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.

  4. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  5. Poling of Planar Silica Waveguides

    DEFF Research Database (Denmark)

    Arentoft, Jesper; Kristensen, Martin; Jensen, Jesper Bo

    1999-01-01

    UV-written planar silica waveguides are poled using two different poling techniques, thermal poling and UV-poling. Thermal poling induces an electro-optic coefficient of 0.067 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. The induced electro-optic effect shows a linear dependence...

  6. Tailoring thermal transport properties of graphene by nitrogen doping

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tingting; Li, Jianhua; Cao, Yuwei; Zhu, Liyan, E-mail: lyzhu@hytc.edu.cn; Chen, Guibin, E-mail: gbchen@hytc.edu.cn [Huaiyin Normal University, School of Physics and Electronic & Electrical Engineering (China)

    2017-02-15

    The influence of two different nitrogen doping configurations, graphite-like and pyridinic-like nitrogen doping (denoted as graphite-N and pyridinic-N hereafter, respectively), on the thermal conduction of graphene is carefully studied via non-equilibrium molecular dynamic (NEMD) simulations. The thermal conductivity is more strongly suppressed in the pyridinic-N-doped graphene than that in the graphite-N-doped sample, which can be well understood from the changes in bond strength between nitrogen and carbon atoms, phonon group velocities, phonon density of states, participation ratio, and phonon transmission. Our study indicates that the pyridinic-N doping is an efficient method to tune the thermal conduction in graphene, especially for the situation where low thermal conductivity is requested, e.g., thermoelectric applications and thermal shielding.

  7. Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); ShanghaiTech University, Shanghai 200031 (China)

    2015-11-30

    Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.

  8. Thermoluminescence of Ge- and Al-doped SiO2 optical fibers subjected to 0.2-4.0 Gy external photon radiotherapeutic dose

    International Nuclear Information System (INIS)

    Hossain, I.; Wagiran, H.; Yaakob, N.H.

    2013-01-01

    In this work, we studied the thermoluminescence response of Ge- and Al-doped optical fibers, its linearity, energy dependence, and sensitivity. The Ge-doped optical fibers demonstrate useful TL properties and represent an excellent candidate for use in TL dosimetry of ionizing radiation. The TL response increases monotonically over a wide photon dose range, from 0.2 Gy to 4.0 Gy. The TL results for these fibers have been compared with similar TL data for phosphor TLD-100. Commercially available Al- and Ge-doped optical fibers have both been found to yield a linear dose-TL signal relationship, although the Al-doped fiber provides only 5 % of the sensitivity of the Ge-doped fibers. The TL characteristics of Ge-doped optical fiber, plus its small size (125 μm diameter), high flexibility, ease of handling, and low cost compared with other TL materials, make this commercial optical fiber a very promising TL material for use in medicine, industry, reactor operation, and a variety of other areas. (author)

  9. Pr3 + -doped GeSx-based glasses for fiber amplifiers at 1.3 µm

    Science.gov (United States)

    Simons, D. R.; Faber, A. J.; de Waal, H.

    1995-03-01

    The photoluminescence properties of Pr3+ -doped GeS x -based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-containing glasses in the telecommunications window at 1.3 mu m is discussed.

  10. The change of electric field and of some other insulating properties during isochronal annealing in thermally poled Ge-doped silica films

    DEFF Research Database (Denmark)

    Liu, Q.M.; Poumellec, B.; Braga, D.

    2005-01-01

    induced electric field and other insulating properties like electron traps population and conductivity in high field. Concerning the change of the contrast at low dose arising from the poling electric field, we show that this field begins to disappear at around 450 degrees C and is erased completely...... at 650 degrees C. Using a larger dose allows measuring the change in conductivity contrast. We find a stability similar to the electric field with a disappearance around 450 similar to 650 degrees C. On the contrary, for intermediate dose, the contrast remains for larger annealing temperature. It allows...

  11. Luminescence of one dimensional ZnO, GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanostructure through thermal evaporation of Zn and Ge powder mixture

    Energy Technology Data Exchange (ETDEWEB)

    Pham, Vuong-Hung, E-mail: vuong.phamhung@hust.edu.vn; Kien, Vu Trung; Tam, Phuong Dinh; Huy, Pham Thanh

    2016-07-15

    Graphical abstract: - Highlights: • ZnO and GeO{sub 2}–ZnGeO{sub 4} nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture. • Morphology of specimens were observed to have a nanowire structure to rod-like morphology. • Strong NBE emission band with suppressed visible green emission band were observed on the dominant ZnO nanowires. • Strong emission of ∼530 nm were observed on the GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires. - Abstract: This paper reports the first attempt for fabrication of thermal evaporated Zn–Ge powder mixture to achieve near-band-edge (NBE) emission of ZnO and visible emission of GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires with controllable intensities. The nanowires were fabricated by thermal evaporation of Zn and Ge powder mixture, particularly, by using different Zn:Ge ratio, temperature and evaporated times. The morphology of nanowires was depended on the Zn and Ge ratio that was observed to have a nanowire structure to rod-like morphology. The thermal evaporation of Zn:Ge powder mixture resulted in formation of dominant ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires as a function of evaporated parameters. These results suggest that the application of thermal evaporation of Zn and Ge mixture for potential application in synthesis of ZnO or GeO{sub 2}–Zn{sub 2}GeO{sub 4} nanowires for optoelectronic field.

  12. Pr3+-doped GeSx-based glasses for fiber amplifiers at 1.3 mm

    NARCIS (Netherlands)

    Simons, D.R.; Faber, A.J.; Waal, de H.

    1995-01-01

    The luminescence of Pr3+-doped GeSx-based glasses were studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeSx-contg. glasses in the telecommunications window at 1.3 mm is discussed. [on SciFinder (R)

  13. 'Kazichzne-Ravno pole' hydro thermal spring - a source and accumulator of heat energy

    International Nuclear Information System (INIS)

    Gasharov, S.

    2001-01-01

    There are more than 1000 thermal sources found on the territory of Bulgaria, but only about 250 are utilized. The paper presents different schemes for the use of thermal energy. The characteristics of the thermal spring 'Kazichene-Ravno pole' are given and the energy balance is made. Directions for the further development of the thermal energy production are outlined

  14. Enhanced Electrical Activation in In-Implanted Si0.35Ge0.65 by C Co-Doping

    International Nuclear Information System (INIS)

    Feng, Ruixing; Kremer, Felipe; Sprouster, David J.; Mirzaei, Sahar; Decoster, Stefan

    2016-01-01

    In this report, we have achieved a significant increase in the electrically active dopant fraction in Indium (In)-implanted Si 0.35 Ge 0.65 , by co-doping with the isovalent element Carbon (C). Electrical measurements have been correlated with X-ray absorption spectroscopy to determine the electrical properties and the In atom lattice location. With C+In co-doping, the solid solubility of In in Si 0.35 Ge 0.65 was at least tripled from between 0.02 and 0.06 at% to between 0.2 and 0.6 at% as a result of C–In pair formation, which suppressed In metal precipitation. A dramatic improvement of electrical properties was thus attained in the co-doped samples.

  15. Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

    Science.gov (United States)

    Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

    2018-06-01

    In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

  16. Crystal growth and optical properties of CdS-doped lead silicate glass

    International Nuclear Information System (INIS)

    Liu Hao; Liu Qiming; Zhao Xiujian

    2007-01-01

    The crystal growth and optical properties of CdS microcrystallite-doped lead silicate glass is investigated in this paper. The existence of CdS nanocrystals was confirmed via X-ray diffraction (XRD) and transmission electron microscopy (TEM). Results reveal that a two-stage heat-treat procedure can produce a better size distribution of CdS nanocrystals than a one-stage heat-treat procedure in glasses. The second harmonic generation (SHG) from the base glass and CdS microcrystallite doped glasses was observed, and the effects of the heat treatments and the thermal poling temperature on the crystallization of CdS and second-order harmonic (SH) intensity were discussed, respectively. It is indicated that samples doped with CdS microcrystallite showed larger SH intensity than that of the base glass. Use of a higher thermal poling temperature than the glass transformation temperature does not result in a good SH intensity in glasses

  17. Correlated photon-pair generation in a periodically poled MgO doped stoichiometric lithium tantalate reverse proton exchanged waveguide

    NARCIS (Netherlands)

    Lobino, M.; Marshall, G.D.; Xiong, C.; Clark, A.S.; Bonneau, D.; Natarajan, C.M.; Tanner, M.G.; Hadfield, R.H.; Dorenbos, S.N.; Zijlstra, T.; Zwiller, V.; Marangoni, M.; Ramponi, R.; Thompson, M.G.; Eggleton, B.J.; O'Brien, J.L.

    2011-01-01

    We demonstrate photon-pair generation in a reverse proton exchanged waveguide fabricated on a periodically poled magnesium doped stoichiometric lithium tantalate substrate. Detected pairs are generated via a cascaded second order nonlinear process where a pump laser at wavelength of 1.55 ?m is first

  18. Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

    Science.gov (United States)

    Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

    2018-01-01

    Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

  19. Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

    International Nuclear Information System (INIS)

    Han Le; Zhang Xiong; Wang Sheng-Kai; Xue Bai-Qing; Liu Hong-Gang; Wu Wang-Ran; Zhao Yi

    2014-01-01

    We propose a modified thermal oxidation method in which an Al 2 O 3 capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO x interfacial layer, and obtain a superior Al 2 O 3 /GeO x /Ge gate stack. The GeO x interfacial layer is formed in oxidation reaction by oxygen passing through the Al 2 O 3 OBL, in which the Al 2 O 3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO x interfacial layer would dramatically decrease as the thickness of Al 2 O 3 OBL increases, which is beneficial to achieving an ultrathin GeO x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO x interfacial layer has little influence on the passivation effect of the Al 2 O 3 /Ge interface. Ge (100) p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) using the Al 2 O 3 /GeO x /Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I on /I off ) ratio of above 1×10 4 , a subthreshold slope of ∼ 120 mV/dec, and a peak hole mobility of 265 cm 2 /V·s are achieved. (condensed matter: structural, mechanical, and thermal properties)

  20. Thermal diffusion boron doping of single-crystal natural diamond

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Wu, Henry; Morgan, Dane [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Blanchard, James P. [Department of Nuclear Engineering and Engineering Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhou, Weidong [Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas 76019 (United States); Gong, Shaoqin [Department of Biomedical Engineering and Wisconsin Institute for Discovery, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-05-28

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  1. Thermal diffusion boron doping of single-crystal natural diamond

    International Nuclear Information System (INIS)

    Seo, Jung-Hun; Mikael, Solomon; Mi, Hongyi; Venkataramanan, Giri; Ma, Zhenqiang; Wu, Henry; Morgan, Dane; Blanchard, James P.; Zhou, Weidong; Gong, Shaoqin

    2016-01-01

    With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

  2. Threshold for strong thermal dephasing in periodically poled KTP in external cavity frequency doubling

    DEFF Research Database (Denmark)

    Lundeman, Jesper Holm; Jensen, Ole Bjarlin; Andersen, Peter E.

    2009-01-01

    We present a measurement series of the efficiency of periodically poled KTP used for second-harmonic generation in an external phase-locked cavity. Due to the high absorption (0.01 cm^−1) in the PPKTP crystal at the pump wavelength a strong thermal dephasing of the periodically poled grating...

  3. Poling of UV-written Waveguides

    DEFF Research Database (Denmark)

    Arentoft, Jesper; Kristensen, Martin; Hübner, Jörg

    1999-01-01

    We report poling of UV-written silica waveguides. Thermal poling induces an electro-optic coefficient of 0.05 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. No measurable decay in the induced electro-optic effect was detected after nine months......We report poling of UV-written silica waveguides. Thermal poling induces an electro-optic coefficient of 0.05 pm/V. We also demonstrate simultaneous UV-writing and UV-poling. No measurable decay in the induced electro-optic effect was detected after nine months...

  4. Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Qi, E-mail: alfred_02030210@163.com; Wei, Yuan

    2014-03-15

    Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model.

  5. Molecular dynamics study on the thermal conductivity and thermal rectification in graphene with geometric variations of doped boron

    International Nuclear Information System (INIS)

    Liang, Qi; Wei, Yuan

    2014-01-01

    Thermal conductivity and thermal rectification of graphene with geometric variations have been investigated by using classical non-equilibrium molecular dynamics simulation, and analyzed theoretically the cause of the changes of thermal conductivity and thermal rectification. Two different structural models, triangular single-boron-doped graphene (SBDG) and parallel various-boron-doped graphene (VBDG), were considered. The results indicated that the thermal conductivities of two different models are about 54–63% lower than pristine graphene. And it was also found that the structure of parallel various-boron-doped graphene is inhibited more strongly on the heat transfer than that of triangular single-boron-doped graphene. The reduction in the thermal conductivities of two different models gradually decreases as the temperature rises. The thermal conductivities of triangular boron-doped graphene have a large difference in both directions, and the thermal rectification of this structure shows the downward trend with increasing temperature. However, the thermal conductivities of parallel various-boron-doped graphene are similar in both directions, and the thermal rectification effect is not obvious in this structure. The phenomenon of thermal rectification exits in SBDG. It implies that the SBDG might be a potential promising structure for thermal rectifier by controlling the boron-doped model

  6. Amplitudes and exchange mechanisms for K*(890) and K*(1420) production. [Exchange degenerate Regge poles, 13 GeV/c, nonevasive cuts

    Energy Technology Data Exchange (ETDEWEB)

    Estabrooks, P; Martin, A D [Durham Univ. (UK); Brandenburg, G W; Carnegie, R K; Cashmore, R J; Davier, M; Dunwoodie, W M; Lasinski, T A; Leith, D W.G.S.; Matthews, J A.J.

    1976-02-16

    The anti K*(890) and antiK*(1420) production amplitudes are determined using data on the reaction K/sup -/p..-->..K/sup -/..pi../sup +/n at 13 GeV/c. The energy dependence of anti K*(890) production is investigated by using in addition the corresponding data at 4 GeV/c. A simple model, based on exchange degenerate Regge poles together with non-evasive 'cut' contributions is found to provide a good description of all features of the data.

  7. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    International Nuclear Information System (INIS)

    Chawanda, A.; Coelho, S.M.M.; Auret, F.D.; Mtangi, W.; Nyamhere, C.; Nel, J.M.; Diale, M.

    2012-01-01

    Highlights: ► Ir/n-Ge (1 0 0) Schottky diodes were characterized using I–V, C–V and SEM techniques under various annealing conditions. ► The variation of the electrical and structural properties can be due to effects phase transformation during annealing. ► Thermal stability of these diodes is maintained up to 500 °C anneal. ► SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current–voltage (I–V) and capacitance–voltage (C–V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 °C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 °C.

  8. Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

    Science.gov (United States)

    Liu, Xiangyu; Hu, Huiyong; Wang, Bin; Wang, Meng; Han, Genquan; Cui, Shimin; Zhang, Heming

    2017-02-01

    In this paper, a novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The simulation results show that Ion = 5.5 × 10-5A/μm is achieved. The junctionless device structure enhances Ion effectively and increases the region where significant BTBT occurs, comparing with the normal Ge-nTEFT. The impact of the lightly doped drain (LDD) region is investigated. A comparison of Ion and Ioff of the junctionless Ge n-TFET with different channel doping concentration ND and LDD doping concentration NLDD is studied. Ioff is reduced 1 order of magnitude with the optimized ND and NLDD are 1 × 1018cm-3 and 1 × 1017 cm-3, respectively. To reduce the gate induced drain leakage (GIDL) current, the impact of the sloped gate oxide structure is also studied. By employing the sloped gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved at Ion = 4.05 × 10-5A/μm and Ion/Ioff = 5.7 × 106.

  9. Interface bond relaxation on the thermal conductivity of Si/Ge core-shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Weifeng; He, Yan; Ouyang, Gang, E-mail: gangouy@hunnu.edu.cn [Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications(SICQEA), Hunan Normal University, Changsha 410081 (China); Sun, Changqing [School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2016-01-15

    The thermal conductivity of Si/Ge core-shell nanowires (CSNWs) is investigated on the basis of atomic-bond-relaxation consideration and continuum mechanics. An analytical model is developed to clarify the interface bond relaxation of Si/Ge CSNWs. It is found that the thermal conductivity of Si core can be modulated through covering with Ge epitaxial layers. The change of thermal conductivity in Si/Ge CSNWs should be attributed to the surface relaxation and interface mismatch between inner Si nanowire and outer Ge epitaxial layer. Our results are in well agreement with the experimental measurements and simulations, suggesting that the presented method provides a fundamental insight of the thermal conductivity of CSNWs from the atomistic origin.

  10. Significant reduction of thermal conductivity in Si/Ge core-shell nanowires.

    Science.gov (United States)

    Hu, Ming; Giapis, Konstantinos P; Goicochea, Javier V; Zhang, Xiaoliang; Poulikakos, Dimos

    2011-02-09

    We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.

  11. The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrov, D.; Shieh, H.-P.D

    2004-03-15

    Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks.

  12. Fabrication of Ge nanocrystals doped silica-on-silicon waveguides and observation of their strong quantum confinement effect

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rottwitt, Karsten

    2009-01-01

    Germanium (Ge) nanocrystals embedded in silica matrix is an interesting material for new optoelectronic devices. In this paper, standard silica-on-silicon waveguides with a core doped by Ge nanocrystals were fabricated using plasma enhanced chemical vapour deposition and reactive ion etching...

  13. Activation and thermal stability of ultra-shallow B+-implants in Ge

    DEFF Research Database (Denmark)

    Yates, B. R.; Darby, B. L.; Petersen, Dirch Hjorth

    2012-01-01

    The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge...... from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed...... was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging...

  14. First-principles calculation on oxygen ion migration in alkaline-earth doped La2GeO5

    International Nuclear Information System (INIS)

    Thuy Linh, Tran Phan; Sakaue, Mamoru; Aspera, Susan Meñez; Alaydrus, Musa; Wungu, Triati Dewi Kencana; Hoang Linh, Nguyen; Kasai, Hideaki; Mohri, Takahiro; Ishihara, Tatsumi

    2014-01-01

    By using first-principles calculations based on the density functional theory, we investigated the doping effects of alkaline-earth metals (Ba, Sr and Ca) in monoclinic lanthanum germanate La 2 GeO 5 on its oxygen ion conduction. Although the lattice parameters of the doped systems changed due to the ionic radii mismatch, the crystal structures remained monoclinic. The contribution of each atomic orbital to electronic densities of states was evaluated from the partial densities of states and partial charge densities. It was confirmed that the materials behaved as ionic crystals comprising of cations of La and dopants and anions of oxygen and covalently formed GeO 4 . The doping effect on the activation barrier for oxygen hopping to the most stable oxygen vacancy site was investigated by the climbing-image nudged elastic band method. By tracing the charge density change during the hopping, it was confirmed that the oxygen motion is governed by covalent interactions. The obtained activation barriers showed excellent quantitative agreements with an experiment for the Ca- and Sr-doped systems in low temperatures as well as the qualitative trend, including the Ba-doped system. (paper)

  15. Thermal behavior of GeO{sub 2} doped PbO-B{sub 2}O{sub 3}-ZnO-Bi{sub 2}O{sub 3} glasses

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Yin [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Xiao Hanning [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)]. E-mail: hnxiao@hnu.cn; Guo Weiming [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Guo Wenming [College of Materials Science and Engineering, Hunan University, Changsha 410082 (China)

    2006-05-15

    PbO-B{sub 2}O{sub 3}-ZnO-Bi{sub 2}O{sub 3} glass is a representative system for vacuum and electronic sealing. Effects of GeO{sub 2} on thermal properties of the glass have been investigated in this paper. Activation energy for crystallization, glass structure, the type of crystals were characterized by differential scanning calorimetry, infrared spectroscopy, X-ray diffraction and optical microscopy. Results indicate that the addition of GeO{sub 2} (0.4-2 wt.%) to PbO-B{sub 2}O{sub 3}-ZnO-Bi{sub 2}O{sub 3} glass can suppress crystallization of the glass and decrease the sealing temperature. With the increase of GeO{sub 2} content, germanate crystals were revealed, resulting in a slight increase of sealing temperature. When the content of GeO{sub 2} is 0.7 wt.%, the glass possesses the highest stability and lowest sealing temperature (400 deg. C), which is desirable for low-temperature sealing. The coefficient of thermal expansion of PbO-B{sub 2}O{sub 3}-ZnO-Bi{sub 2}O{sub 3} glass was measured by dilatometry. The result shows that the coefficient of thermal expansion of the glass increases with the content of GeO{sub 2}. The adjustability of the coefficient of thermal expansion would expand the applications of PbO-B{sub 2}O{sub 3}-ZnO-Bi{sub 2}O{sub 3} glass. A flexural strength of 28.3 MPa was obtained at the GeO{sub 2} content of 0.7 wt.%, showing good mechanical property for sealing process.

  16. Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, A., E-mail: albert.chawanda@up.ac.za [Department of Physics, University of Pretoria, 0002 (South Africa); Department of Physics, Midlands State University, Bag 9055, Gweru (Zimbabwe); Coelho, S.M.M.; Auret, F.D.; Mtangi, W. [Department of Physics, University of Pretoria, 0002 (South Africa); Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, Box 77000, Port Elizabeth 6031 (South Africa); Nel, J.M.; Diale, M. [Department of Physics, University of Pretoria, 0002 (South Africa)

    2012-02-05

    Highlights: Black-Right-Pointing-Pointer Ir/n-Ge (1 0 0) Schottky diodes were characterized using I-V, C-V and SEM techniques under various annealing conditions. Black-Right-Pointing-Pointer The variation of the electrical and structural properties can be due to effects phase transformation during annealing. Black-Right-Pointing-Pointer Thermal stability of these diodes is maintained up to 500 Degree-Sign C anneal. Black-Right-Pointing-Pointer SEM results depicts that the onset temperature for agglomeration in 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C. - Abstract: Iridium (Ir) Schottky barrier diodes were deposited on bulk grown (1 0 0) Sb-doped n-type germanium by using the electron beam deposition system. Electrical characterization of these contacts using current-voltage (I-V) and capacitance-voltage (C-V) measurements was performed under various annealing conditions. The variation of the electrical properties of these Schottky diodes can be attributed to combined effects of interfacial reaction and phase transformation during the annealing process. Thermal stability of the Ir/n-Ge (1 0 0) was observed up to annealing temperature of 500 Degree-Sign C. Furthermore, structural characterization of these samples was performed by using a scanning electron microscopy (SEM) at different annealing temperatures. Results have also revealed that the onset temperature for agglomeration in a 20 nm Ir/n-Ge (1 0 0) system occurs between 600 and 700 Degree-Sign C.

  17. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  18. Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires.

    Science.gov (United States)

    Das, Suvankar; Moitra, Amitava; Bhattacharya, Mishreyee; Dutta, Amlan

    2015-01-01

    The present study employs the method of atomistic simulation to estimate the thermal stress experienced by Si/Ge and Ge/Si, ultrathin, core/shell nanowires with fixed ends. The underlying technique involves the computation of Young's modulus and the linear coefficient of thermal expansion through separate simulations. These two material parameters are combined to obtain the thermal stress on the nanowires. In addition, the thermally induced stress is perceived in the context of buckling instability. The analysis provides a trade-off between the geometrical and operational parameters of the nanostructures. The proposed methodology can be extended to other materials and structures and helps with the prediction of the conditions under which a nanowire-based device might possibly fail due to elastic instability.

  19. Effects of dopants on the amorphous-to-fcc transition in Ge{sub 2}Sb{sub 2}Te{sub 5} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Privitera, S. [R and D Department, Micro, Power, Analog (MPA) Group, STMicroelectronics, MP8, Stradale Primosole 50, 95121 Catania (Italy)]. E-mail: stefania.privitera@st.com; Rimini, E. [Istituto di Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Stradale Primosole 50, 95121 Catania (Italy); Bongiorno, C. [Istituto di Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Stradale Primosole 50, 95121 Catania (Italy); Pirovano, A. [FTM, Advanced R and D, NVMTD, STMicroelectronics, Via Olivetti 2, 20041, Agrate Brianza (Italy); Bez, R. [FTM, Advanced R and D, NVMTD, STMicroelectronics, Via Olivetti 2, 20041, Agrate Brianza (Italy)

    2007-04-15

    The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge{sub 2}Sb{sub 2}Te{sub 5} thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge{sub 2}Sb{sub 2}Te{sub 5}. Larger effects have been found in the case of nitrogen doping. On the contrary, doping with Fluorine produced a decrease in the crystallization temperature. The electrical properties have been related to the structural phase change through in situ transmission electron microscopy analysis. The comparison between undoped and doped Ge{sub 2}Sb{sub 2}Te{sub 5} shows that the introduction of oxygen or nitrogen modifies in a different way the kinetics of the amorphous-to-fcc transition and gives new insight on the effects of doping with light elements in GeSbTe alloys.

  20. Investigation of the spatial distribution of second-order nonlinearity in thermally poled optical fibers.

    Science.gov (United States)

    An, Honglin; Fleming, Simon

    2005-05-02

    The spatial distribution of second-order nonlinearity in thermally poled optical fibers was characterized by second-harmonic microscopy. The second-order nonlinearity was found to be confined to a thin layer close to the anode surface and progressed further into the silica as the poling time increased. Position uncertainty of the anode metal wire was observed to have an effect, as the nonlinear layers were found not always symmetrically located around the nearest points between the anode and cathode. Optical microscopy results were obtained on etched poled fiber cross-sections and compared with those from second-harmonic microscopy.

  1. First-principles study on the gas sensing property of the Ge, As, and Br doped PtSe2

    Science.gov (United States)

    Zhang, Jing; Yang, Gui; Tian, Junlong; Ma, Dongwei; Wang, Yuanxu

    2018-03-01

    Based on first-principles calculations, the adsorption behaviors of H2, O2, CO, CO2, NH3, NO, and NO2 molecules on the Ge-, As- and Br-doped PtSe2 monolayers are theoretically investigated. The results indicate that it is viable for the dopant atoms to be filled into the Se vacancies under Pt-rich conditions. Ge and As act as p-type dopants, while Br acts as n-type dopant. For the adsorption of molecules, the geometrical structures, adsorption energies, charge transfers and the electronic and magnetic properties of the most stable configurations are presented and discussed. It is found that the Ge-doped PtSe2 monolayers exhibit greatly enhanced sensitivity toward O2, CO, NH3, NO and NO2 molecules and the As-doped PtSe2 monolayers are more sensitive toward O2, NH3, NO and NO2 molecules than the pristine ones. This is evident from large adsorption energies, charge transfers, and obvious changes of the electronic states due to the molecule adsorption. However, Br doping cannot enhance the sensing sensitivity of the PtSe2 monolayer. The possible reason is that when substituting for the Se atom, the doped Br with more 4p electrons and less empty orbitals are already chemically saturated by the two of the three neighboring Pt atoms, and thus lose the ability of charge exchange with the adsorbed molecules. On the contrary, the Ge and As as p-type dopants have sizable empty 4p orbitals near the Fermi level to exchange the electrons with the adsorbed molecules, and thus form strong bonds with them.

  2. Thermal transport in Si and Ge nanostructures in the 'confinement' regime.

    Science.gov (United States)

    Kwon, Soonshin; Wingert, Matthew C; Zheng, Jianlin; Xiang, Jie; Chen, Renkun

    2016-07-21

    Reducing semiconductor materials to sizes comparable to the characteristic lengths of phonons, such as the mean-free-path (MFP) and wavelength, has unveiled new physical phenomena and engineering capabilities for thermal energy management and conversion systems. These developments have been enabled by the increasing sophistication of chemical synthesis, microfabrication, and atomistic simulation techniques to understand the underlying mechanisms of phonon transport. Modifying thermal properties by scaling physical size is particularly effective for materials which have large phonon MFPs, such as crystalline Si and Ge. Through nanostructuring, materials that are traditionally good thermal conductors can become good candidates for applications requiring thermal insulation such as thermoelectrics. Precise understanding of nanoscale thermal transport in Si and Ge, the leading materials of the modern semiconductor industry, is increasingly important due to more stringent thermal conditions imposed by ever-increasing complexity and miniaturization of devices. Therefore this Minireview focuses on the recent theoretical and experimental developments related to reduced length effects on thermal transport of Si and Ge with varying size from hundreds to sub-10 nm ranges. Three thermal transport regimes - bulk-like, Casimir, and confinement - are emphasized to describe different governing mechanisms at corresponding length scales.

  3. Electrical and Optical Properties of GeSi−:H Thin Films Prepared by Thermal Evaporation Method

    Directory of Open Access Journals (Sweden)

    A. A. J. Al-Douri

    2010-01-01

    Full Text Available Thin a-GeSi1−:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As, and substrate temperature, were employed. Stoichiometry of the thin films composition was confirmed using standard surface techniques. The structure of all films was amorphous. Film composition and deposition parameters were investigated for their bearing on film electrical and optical properties. More than one transport mechanism is indicated. It was observed that increasing substrate temperature, Ge contents, and dopant concentration lead to a decrease in the optical energy gap of those films. The role of the deposition conditions on values of the optical constants was determined. Accordingly, models of the density of states for the Ge0.5Si0.5:H thin films as pure, doped with 3.5% of Al (p-type and that doped with 3.5% As (n-type, were proposed.

  4. Thermoluminescence characteristics of different dimensions of Ge-doped optical fibers in radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Begum, M.; Mizanur R, A. K. M.; Abdul R, H. A.; Yusoff, Z. [Multimedia University, Faculty of Engineering, 63100 Cyberjaya, Selangor Darul Ehsan (Malaysia); Begum, M. [Bangladesh Atomic Energy Commission, E-12/A, Agargaon, Sher-e-Blanga Nagar Dhaka-1207 (Bangladesh); Mat-Sharif, K. A. [Lingkaran Teknokrat Timur, Telekom Research and Development, 63000 Cyberjaya, Selangor Darul Ehsan (Malaysia); Amin, Y. M. [University of Malaya, Faculty of Science, Depatment of Physics, 50603 Kuala Lumpur (Malaysia); Bradley, D. A., E-mail: go2munmun@yahoo.com [University of Surrey, Department of Physics, Guildford GU2 7XH (United Kingdom)

    2014-08-15

    Important thermoluminescence (Tl) properties of five (5) different core sizes Ge doped optical fibers have been studied to develop new Tl material with better response. These are drawn from same preform applying different speed and tension during drawing phase. The results of the investigations are also compared with most commonly used standard TLD-100 chips (LiF:Mg,Ti) and commercial multimode Ge doped optical fiber (Yangtze Optical Fiber, China). Scanning Electron Microscope (Sem) and EDX analysis of the fibers are also performed to map Ge distribution across the deposited region. Standard Gamma radiation source in SSDL (Secondary Standard Dosimetry Lab) was used for irradiation covering dose range from 1 Gy to 10 Gy. The essential dosimetric parameters that have been studied are Tl linearity, reproducibility and fading. Prior to irradiation all samples ∼0.5 cm length are annealed at temperature of 400 grades C for 1 hour period to standardize their sensitivities and background. Standard TLD-100 chips are also annealed for 1 hour at 400 grades C and subsequently 2 hours at 100 grades C to yield the highest sensitivity. Tl responses of these fibers show linearity over a wide gamma radiation dose that is an important property for radiation dosimetry. Among all fibers used in this study, 100 μm core diameter fiber provides highest response that is 2.6 times than that of smallest core (20 μm core) optical fiber. These fiber-samples demonstrate better response than commercial multi-mode optical fiber and also provide low degree of fading about 20% over a period of fifteen days for gamma radiation. Effective atomic number (Z{sub eff}) is found in the range (13.25 to 13.69) that is higher than soft tissue (7.5) however within the range of human-bone (11.6-13.8). All the fibers can also be re-used several times as a detector after annealing. Tl properties of the Ge-doped optical fibers indicate promising applications in ionizing radiation dosimetry. (author)

  5. Thermoluminescence characteristics of different dimensions of Ge-doped optical fibers in radiation dosimetry

    International Nuclear Information System (INIS)

    Begum, M.; Mizanur R, A. K. M.; Abdul R, H. A.; Yusoff, Z.; Begum, M.; Mat-Sharif, K. A.; Amin, Y. M.; Bradley, D. A.

    2014-08-01

    Important thermoluminescence (Tl) properties of five (5) different core sizes Ge doped optical fibers have been studied to develop new Tl material with better response. These are drawn from same preform applying different speed and tension during drawing phase. The results of the investigations are also compared with most commonly used standard TLD-100 chips (LiF:Mg,Ti) and commercial multimode Ge doped optical fiber (Yangtze Optical Fiber, China). Scanning Electron Microscope (Sem) and EDX analysis of the fibers are also performed to map Ge distribution across the deposited region. Standard Gamma radiation source in SSDL (Secondary Standard Dosimetry Lab) was used for irradiation covering dose range from 1 Gy to 10 Gy. The essential dosimetric parameters that have been studied are Tl linearity, reproducibility and fading. Prior to irradiation all samples ∼0.5 cm length are annealed at temperature of 400 grades C for 1 hour period to standardize their sensitivities and background. Standard TLD-100 chips are also annealed for 1 hour at 400 grades C and subsequently 2 hours at 100 grades C to yield the highest sensitivity. Tl responses of these fibers show linearity over a wide gamma radiation dose that is an important property for radiation dosimetry. Among all fibers used in this study, 100 μm core diameter fiber provides highest response that is 2.6 times than that of smallest core (20 μm core) optical fiber. These fiber-samples demonstrate better response than commercial multi-mode optical fiber and also provide low degree of fading about 20% over a period of fifteen days for gamma radiation. Effective atomic number (Z eff ) is found in the range (13.25 to 13.69) that is higher than soft tissue (7.5) however within the range of human-bone (11.6-13.8). All the fibers can also be re-used several times as a detector after annealing. Tl properties of the Ge-doped optical fibers indicate promising applications in ionizing radiation dosimetry. (author)

  6. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    Science.gov (United States)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S. K.

    2014-06-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge2Sb2Te5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In2Te3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation α hν = β (hν - E_{{g }} )2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials.

  7. Theoretical and experimental investigations of the properties of Ge2Sb2Te5 and indium-doped Ge2Sb2Te5 phase change material

    International Nuclear Information System (INIS)

    Singh, Gurinder; Kaura, Aman; Mukul, Monika; Singh, Janpreet; Tripathi, S.K.

    2014-01-01

    We have carried out comprehensive computational and experimental study on the face-centered cubic Ge 2 Sb 2 Te 5 (GST) and indium (In)-doped GST phase change materials. Structural calculations, total density of states and crystal orbital Hamilton population have been calculated using first-principle calculation. 5 at.% doping of In weakens the Ge-Te, Sb-Te and Te-Te bond lengths. In element substitutes Sb to form In-Te-like structure in the GST system. In-Te has a weaker bond strength compared with the Sb-Te bond. However, both GST and doped alloy remain in rock salt structure. It is more favorable to replace Sb with In than with any other atomic position. X-ray diffraction (XRD) analysis has been carried out on thin film of In-doped GST phase change materials. XRD graph reveals that In-doped phase change materials have rock salt structure with the formation of In 2 Te 3 crystallites in the material. Temperature dependence of impedance spectra has been calculated for thin films of GST and doped material. Thickness of the as-deposited films is calculated from Swanepoel method. Absorption coefficient (α) has been calculated for amorphous and crystalline thin films of the alloys. The optical gap (indirect band gap) energy of the amorphous and crystalline thin films has also been calculated by the equation αhν = β(hν - E g ) 2 . Optical contrast (C) of pure and doped phase change materials have also been calculated. Sufficient optical contrast has been found for pure and doped phase change materials. (orig.)

  8. Chemical states and optical properties of thermally evaporated Ge-Te and Ge-Sb-Te amorphous thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Singh, D.; Shandhu, S. [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India); Thangaraj, R., E-mail: rthangaraj@rediffmail.com [Semiconductor Laboratory, Department of Physics, Guru Nanak Dev University Amritsar (India)

    2012-07-15

    Thin amorphous films of Ge{sub 22}Sb{sub 22}Te{sub 56} and Ge{sub 50}Te{sub 50} have been prepared from their respective polycrystalline bulk on glass substrates by thermal evaporation technique. The amorphous nature of the films was checked with X-ray diffraction studies. Amorphous-to-crystalline transition of the films has been induced by thermal annealing and the structural phases have been identified by X-ray diffraction. The phase transformation temperature of the films was evaluated by temperature dependent sheet resistance measurement. The chemical structure of the amorphous films has been investigated using X-ray photoelectron spectroscopy and the role of Sb in phase change Ge{sub 22}Sb{sub 22}Te{sub 56} film is discussed. Survey and core level (Ge 3d, Te 3d, Te 4d, Sb 3p, Sb 3d, O 1s, C 1s) band spectra has been recorded and analyzed. For optical studies, the transmittance and the reflectance spectra were measured over the wavelength ranges 400-2500 nm using UV-vis-NIR spectroscopy. The optical band gap, refractive index and extinction coefficient are also presented for thermally evaporated amorphous thin films.

  9. Thermal, structural and optical properties of new TeO2sbnd Sb2O3sbnd GeO2 ternary glasses

    Science.gov (United States)

    Pereira, C.; Barbosa, J.; Cassanjes, F. C.; Gonçalves, R. R.; Ribeiro, S. J. L.; Poirier, G.

    2016-12-01

    In this work the novel glass system TeO2sbnd Sb2O3sbnd GeO2 was investigated and promising glass compositions were selected for further specific studies. Glass samples in the (80-0.8x)TeO2-(20-0.2x)Sb2O3-xGeO2 molar composition were prepared by the melt-quenching method with a glass-forming domain from x = 10 to x = 90. Samples were investigated by XRD, DSC, FTIR, Raman spectroscopy and UV-visible absorption. The XRD and DSC results bring informations about the non-crystalline state and thermal properties of these materials. It has been observed that higher GeO2 contents lead to higher glass transition temperatures and thermal stabilities against crystallization. FTIR and Raman spectroscopies suggest a progressive incorporation of GeO2 in the covalent network of TeO2 with conversion of structural units TeO4 to TeO3. Absorption spectra revealed the high visible transparency of these samples and an increase of the optical band gap with GeO2 addition, in agreement with a decreasing polarizability of the glass network. Er3+ doped and Er3+/Yb3+ codoped samples were also studied with respect to their infrared emission properties and higher GeO2 contents lead to an increase in IR emission intensity at 1,5 μm as well as longer radiative lifetimes. Finally, upconversion emission in the visible were also recorded and were shown to be strongly dependent of the composition.

  10. Increasing the thermoelectric power factor of Ge17Sb2Te20 by adjusting the Ge/Sb ratio

    Science.gov (United States)

    Williams, Jared B.; Mather, Spencer P.; Page, Alexander; Uher, Ctirad; Morelli, Donald T.

    2017-07-01

    We have investigated the thermoelectric properties of Ge17Sb2Te20. This compound is a known phase change material with electronic properties that depend strongly on temperature. The thermoelectric properties of this compound can be tuned by altering the stoichiometry of Ge and Sb without the use of additional foreign elements during synthesis. This tuning results in a 26% increase in the thermoelectric power factor at 723 K. Based on a single parabolic band model we show that the pristine material is optimally doped, and thus, a reduction in the lattice thermal conductivity of pure Ge17Sb2Te20 should result in an enhanced thermoelectric figure of merit.

  11. Thermokinetic behaviour of Ag-doped (GeS2)50(Sb2S3)50 glasses.

    Czech Academy of Sciences Publication Activity Database

    Svoboda, R.; Fraenkl, M.; Frumarová, Božena; Wágner, T.; Málek, J.

    2016-01-01

    Roč. 449, 1 October (2016), s. 12-19 ISSN 0022-3093 Institutional support: RVO:61389013 Keywords : DSC * Ag doping * Ge-Sb-S glass Subject RIV: CA - Inorganic Chemistry Impact factor: 2.124, year: 2016

  12. Hydrostatic pressure effect on the magnetocaloric behavior of Ga-doped MnNiGe magnetic equiatomic alloy

    International Nuclear Information System (INIS)

    Dutta, P; Das, D; Chatterjee, S; Pramanick, S; Majumdar, S

    2016-01-01

    The magnetocaloric properties of a new class of ferromagnetic shape memory alloys of nominal composition MnNiGe 0.928 Ga 0.072 have been investigated in ambient conditions as well as in the presence of external hydrostatic pressure. Both inverse (6.35 Jkg −1 K −1 for 0  −  50 kOe around 160 K) and conventional (−4.54 Jkg −1 K −1 for 0–50 kOe around 210 K) magnetocaloric effects (MCEs) have been observed around the structural and magnetic transitions respectively. The sample can be thought of as being derived from the parent MnNiGe alloy, where Ga was doped at the expense of the Ge atom. Ga doping at Ge sites brings down the martensitic transition temperature to below room temperature and induces ferromagnetism by affecting the lattice volume of the alloy. However, below the first-order martensitic transition the alloy loses its ferromagnetism. Application of external hydrostatic pressure results in a revival of ferromagnetic interactions in the martensitic phase of the alloy and a considerable increase in the refrigeration capacity around the conventional MCE region. (paper)

  13. Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

    Science.gov (United States)

    Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

    2018-06-01

    Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

  14. Electrical and Thermal Conductivity and Conduction Mechanism of Ge2Sb2Te5 Alloy

    Science.gov (United States)

    Lan, Rui; Endo, Rie; Kuwahara, Masashi; Kobayashi, Yoshinao; Susa, Masahiro

    2017-11-01

    Ge2Sb2Te5 alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge2Sb2Te5 alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge2Sb2Te5 alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann-Franz law using the resistivity results. At room temperature, Ge2Sb2Te5 alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge2Sb2Te5 alloy accounts for the thermal conduction mechanism.

  15. Thermal analysis of sulfide Ge-Ga glasses doped by praseodymium

    Czech Academy of Sciences Publication Activity Database

    Drabik, M.; Kozak, T.; Ležal, Dimitrij; Poulain, M.; Kalužný, J.

    2002-01-01

    Roč. 67, č. 1 (2002), s. 223-227 ISSN 1418-2874 Institutional research plan: CEZ:AV0Z4032918 Keywords : glass transition * Pr dopand * sulfide Ge-Ga glasses Subject RIV: CA - Inorganic Chemistry Impact factor: 0.598, year: 2002

  16. Investigation of thermal stability and spectroscopic properties in Er3+ doped bismuth-boron-germanium glasses

    International Nuclear Information System (INIS)

    Nie Qiuhua; Lu Longjun; Dai Shixun; Xu Tiefeng; Shen Xiang; Zhang Xudong; Liang Xiaowei; Zhang Xianghua

    2007-01-01

    A series of Er 3+ -doped 50Bi 2 O 3 -(50-x)B 2 O 3 -xGeO 2 +0.5 wt% Er 2 O 3 (x=0, 5, 10, 15, 20 mol%) glasses were prepared. The thermal stability, absorption spectra, emission spectra and lifetime of the 4 I 13 / 2 level of Er 3+ ions were measured and studied. It is found that the absorption cross-section of Er 3+ , emission intensity and lifetime of the 4 I 13 / 2 level of Er 3+ increase with increasing GeO 2 content in the glass composition, while the fluorescence full-width at half-maximum (FWHM) at 1.5 μm of Er 3+ is about 79 nm in x=20 mol% glass sample under 970 nm pump. The obtained data suggest that this system glass can be used as a candidate host material for potential broadband optical amplifiers

  17. A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

    Science.gov (United States)

    Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

    2015-06-11

    Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.

  18. Atomistic simulation of the thermal conductivity in amorphous SiO2 matrix/Ge nanocrystal composites

    Science.gov (United States)

    Kuryliuk, Vasyl V.; Korotchenkov, Oleg A.

    2017-04-01

    We use nonequilibrium molecular dynamics computer simulations with the Tersoff potential aiming to provide a comprehensive picture of the thermal conductivity of amorphous SiO2 (a-SiO2) matrix with embedded Ge nanocrystals (nc-Ge). The modelling predicts the a-SiO2 matrix thermal conductivity in a temperature range of 50 fair agreement with experiment at around room temperature. It is worth noticing that the predicted room-temperature thermal conductivity in a-SiO2 is in very good agreement with the experimental result, which is in marked contrast with the thermal conductivity calculated employing the widely used van Beest-Kramer-van Santen (BKS) potential. We show that the thermal conductivity of composite nc-Ge/a-SiO2 systems decreases steadily with increasing the volume fraction of Ge inclusions, indicative of enhanced interface scattering of phonons imposed by embedded Ge nanocrystals. We also observe that increasing the volume fractions above a certain threshold value results in a progressively increased thermal conductivity of the nanocomposite, which can be explained by increasing volume fraction of a better thermally conducting Ge. Finally, non-equilibrium molecular dynamics simulations with the Tersoff potential are promising for computing the thermal conductivity of nanocomposites based on amorphous SiO2 and can be readily scaled to more complex composite structures with embedded nanoparticles, which thus help design nanocomposites with desired thermal properties.

  19. Effect of Sn Composition in Ge1- x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Kil, Yeon-Ho; Kang, Sukill; Jeong, Tae Soo; Shim, Kyu-Hwan; Kim, Dae-Jung; Choi, Yong-Dae; Kim, Mi Joung; Kim, Taek Sung

    2018-05-01

    The Ge1- x Sn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order to obtain effect of the Sn composition on the structural and the optical characteristics, we utilized highresolution X-ray diffraction (HR-XRD), etch pit density (EPD), atomic force microscopy (AFM), Raman spectroscopy, and photocurrent (PC) spectra. The Sn compositions in the Ge1- x Sn x layers were found to be of x = 0.00%, 0.51%, 0.65%, and 0.83%. The root-mean-square (RMS) of the surface roughness of the Ge1- x Sn x layer increased from 2.02 nm to 3.40 nm as the Sn composition was increased from 0.51% to 0.83%, and EPD was on the order of 108 cm-2. The Raman spectra consist of only one strong peak near 300 cm-1, which is assigned to the Ge-Ge LO peaks and the Raman peaks shift to the wave number with increasing Sn composition. Photocurrent spectra show near energy band gap peaks and their peak energies decrease with increasing Sn composition due to band-gap bowing in the Ge1- x Sn x layer. An increase in the band gap bowing parameter was observed with increasing Sn composition.

  20. Optical and thermal investigation of GeO2–PbO thin films doped with Au and Ag nanoparticles

    International Nuclear Information System (INIS)

    Carvalho, E.A.; Carmo, A.P.; Bell, M.J.V.; Anjos, V.; Kassab, L.R.P.; Silva, D.M. da

    2012-01-01

    The present work reports on the thermo-optical study of germanate thin films doped with Au and Ag nanoparticles. Transmission Electron Microscopy images, UV–visible absorption and Micro-Raman scattering evidenced the presence of nanoparticles and the formation of collective excitations, the so called surface plasmons. Moreover, the effects of the metallic nanoparticles in the thermal properties of the films were observed. The thermal lens technique was proposed to evaluate the Thermal Diffusivity (D) of the samples. It furnishes superficial spatial resolution of about 100 μm, so it is appropriate to study inhomogeneous samples. It is shown that D may change up to a factor 3 over the surface of a film because of the differences in the nanoparticles concentration distribution.

  1. Enhanced persistent red luminescence in Mn2+-doped (Mg,Zn)GeO3 by electron trap and conduction band engineering

    Science.gov (United States)

    Katayama, Yumiko; Kayumi, Tomohiro; Ueda, Jumpei; Tanabe, Setsuhisa

    2018-05-01

    The effect of Zn substitution on the persistent luminescence properties of MgGeO3:Mn2+-Ln3+ (Ln = Eu and Yb) red phosphors was investigated. The intensity of the persistent luminescence of the Eu3+ co-doped phosphors increased with increasing Zn content, whereas that of the Yb3+ co-doped samples decreased. For both series of lanthanide co-doped samples, the thermoluminescence (TL) glow peak shifted to the lower temperature side with increasing Zn content. These persistent luminescence properties were well explained in terms of lowering of the bottom of the conduction band relative to the ground state of the divalent lanthanide ions. Especially, in Eu3+ co-doped system, TL peak shifted from 520 K to 318 K by 50% Zn substitution. The persistent radiance of the (Mg0.5 Zn0.5)GeO3: Mn2+-Eu3+ sample at 1 h after ceasing UV light was 46 times stronger than that of MgGeO3:Mn2+-Eu3+, and 11 times stronger than that of ZnGa2O4: Cr3+ standard deep red persistent phosphor.

  2. Effect of tungsten on the phase-change properties of Ge8Sb2Te11 thin films for the phase-change device

    Science.gov (United States)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-07-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge8Sb2Te11 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge8Sb2Te11 and W-doped Ge8Sb2Te11 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si ( p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the 0 - 400 ° C temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer's Law equation, the optical-energy band gap ( E op ), slope B 1/2, and slope 1/ F were calculated. For the crystalline materials, an increase in the slope B 1/2 and 1/ F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge8Sb2Te11 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature ( T c ). An increase in the T c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance ( R s ) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  3. The computational study of adsorption of carbon monoxide on pristine and Ge-doped (6,0 zigzag models of BNNTs

    Directory of Open Access Journals (Sweden)

    Mahdi Rezaei Sameti

    2014-07-01

    Full Text Available The aim of this research is studying the effects of Ge-doped on CO adsorption on the outer and inner surfaces of (6, 0 zigzag model of boron nitride nanotube (BNNTs by using DFT theory. For this purpose, eight models of CO adsorption on the surfaces of BNNTs are considered. At first step, all structures were optimized at B3LYP and 6-31G (d standard base set and then the electronic structure, adsorption energy, HOMO - LUMO orbitals, gap energy, quantum molecular descriptors, and NQR parameters were determined. The bond lengths neighborhood sites of Ge-doped of BNNTs at all models were increased and the bond angles decreased. The small ad-sorption energy value and large interaction distance show that the adsorption of CO on BNNTs is weakly physical adsorption due to weak Van der Waals interaction. Our calculated results show that the adsorption of CO on the surface of undoped models is more favorable than Ge-doped models. The NQR parameters of the first layer in all the models are larger than those other layers.

  4. Optical characterization of Tm3+ doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2

    Science.gov (United States)

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-01-01

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd–Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm3+ ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH− absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10−21 cm2) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm3+: 4F3 → 3H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation (3H6 + 3H4 → 3F4 + 3F4) rate. Our results suggest that the Tm3+ doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system. PMID:27506152

  5. Optical characterization of Tm(3+) doped Bi2O3-GeO2-Ga2O3 glasses in absence and presence of BaF2.

    Science.gov (United States)

    Han, Kexuan; Zhang, Peng; Wang, Shunbin; Guo, Yanyan; Zhou, Dechun; Yu, Fengxia

    2016-08-10

    In this paper, Two new Bi2O3-GeO2-Ga2O3 glasses (one presence of BaF2) doped with 1mol% Tm2O3 were prepared by melt-quenching technique. Differential thermal analysis (DTA), the absorption, Raman, IR spectra and fluorescence spectra were measured. The Judd-Ofelt intensity parameters, emission cross section, absorption cross section, and gain coefficient of Tm(3+) ions were comparatively investigated. After the BaF2 introduced, the glass showed a better thermal stability, lower phonon energy and weaker OH(-) absorption coefficient, meanwhile, a larger ~1.8 μm emission cross section σem (7.56 × 10(-21) cm(2)) and a longer fluorescence lifetime τmea (2.25 ms) corresponding to the Tm(3+): (4)F3 → (3)H6 transition were obtained, which is due to the addition of fluoride in glass could reduce the quenching rate of hydroxyls and raise the cross-relaxation ((3)H6 + (3)H4 → (3)F4 + (3)F4) rate. Our results suggest that the Tm(3+) doped Bi2O3-GeO2-Ga2O3 glass with BaF2 might be potential to the application in efficient ~1.8 μm lasers system.

  6. Evolution of magnetostructural transition and magnetocaloric effect with Al doping in MnCoGe1-xAlx compounds

    KAUST Repository

    Bao, Lifu; Hu, Fengxia; Wu, Rongrong; Wang, Jianping; Chen, Liming; Sun, Jirong; Shen, Baogen; Li, Lain-Jong; Zhang, Bei; Zhang, Xixiang

    2014-01-01

    The effect of Al doping in MnCoGe1-xAlx compounds has been investigated. The substitution of Al for Ge enhances Mn-Mn covalent bonding by shortening the distance of nearest Mn atom layers, and thus stabilizes the hexagonal structure. As a result, first-order magnetostructural transition between ferromagnetic martensite and paramagnetic austenite takes place for the optimized compositions (x = 0.01, 0.02). Accompanied with the magnetostructural transition, large magnetocaloric effect (MCE) is observed. More doping of Al(x = 0.03, 0.04) leads to the separation of magnetic and structural transitions and remarkable reduction of MCE. © 2014 IOP Publishing Ltd.

  7. Evolution of magnetostructural transition and magnetocaloric effect with Al doping in MnCoGe1-xAlx compounds

    KAUST Repository

    Bao, Lifu

    2014-01-03

    The effect of Al doping in MnCoGe1-xAlx compounds has been investigated. The substitution of Al for Ge enhances Mn-Mn covalent bonding by shortening the distance of nearest Mn atom layers, and thus stabilizes the hexagonal structure. As a result, first-order magnetostructural transition between ferromagnetic martensite and paramagnetic austenite takes place for the optimized compositions (x = 0.01, 0.02). Accompanied with the magnetostructural transition, large magnetocaloric effect (MCE) is observed. More doping of Al(x = 0.03, 0.04) leads to the separation of magnetic and structural transitions and remarkable reduction of MCE. © 2014 IOP Publishing Ltd.

  8. Tailoring Thermal Radiative Properties with Doped-Silicon Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhuomin [Georgia Inst. of Technology, Atlanta, GA (United States)

    2017-08-28

    Aligned doped-silicon nanowire (D-SiNW) arrays form a hyperbolic metamaterial in the mid-infrared and have unique thermal radiative properties, such as broadband omnidirectional absorption, low-loss negative refraction, etc. A combined theoretical and experimental investigation will be performed to characterize D-SiNW arrays and other metamaterials for tailoring thermal radiative properties. Near-field thermal radiation between anisotropic materials with hyperbolic dispersions will also be predicted for potential application in energy harvesting. A new kind of anisotropic metamaterial with a hyperbolic dispersion in a broad infrared region has been proposed and demonstrated based on aligned doped-silicon nanowire (D-SiNW) arrays. D-SiNW-based metamaterials have unique thermal radiative properties, such as broadband omnidirectional absorption whose width and location can be tuned by varying the filling ratio and/or doping level. Furthermore, high figure of merit (FOM) can be achieved in a wide spectral region, suggesting that D-SiNW arrays may be used as a negative refraction material with much less loss than other structured materials, such as layered semiconductor materials. We have also shown that D-SiNWs and other nanostructures can significantly enhance near-field thermal radiation. The study of near-field radiative heat transfer between closely spaced objects and the electromagnetic wave interactions with micro/nanostructured materials has become an emerging multidisciplinary field due to its importance in advanced energy systems, manufacturing, local thermal management, and high spatial resolution thermal sensing and mapping. We have performed extensive study on the energy streamlines involving anisotropic metamaterials and the applicability of the effective medium theory for near-field thermal radiation. Graphene as a 2D material has attracted great attention in nanoelectronics, plasmonics, and energy harvesting. We have shown that graphene can be used to

  9. Thermal properties of black phosphorene and doped phosphorene (C, N & O): A DFT study

    Science.gov (United States)

    Devi, Anjna; Singh, Amarjeet

    2018-04-01

    In this work, we present the results from a DFT based computational study of pristine phosphorene and doped (C, N & O) phosphorene. We systematically investigated the lattice thermal properties of black phosphorene and the effect of doping on its thermal properties. We first determined the vibrational properties of pristine and doped phosphorene and from these results we calculated their thermal properties. We doped the phosphorene with C, N and O and observed that the structural stability of doped phosphorene decreases, while the thermal stability is increased as compared to pristine phosphorene. The presence of finite temperature effects in the doped system can contribute to acceleration of progress in future nano-scale technology.

  10. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  11. Effect of tungsten on the phase-change properties of Ge_8Sb_2Te_1_1 Thin Films for the Phase-change device

    International Nuclear Information System (INIS)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin

    2017-01-01

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge_8Sb_2Te_1_1 thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge_8Sb_2Te_1_1 and W-doped Ge_8Sb_2Te_1_1 films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E_o_p), slope B"1"/"2, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B"1"/"2 and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge_8Sb_2Te_1_1 had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T_c). An increase in the T_c increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R_s) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  12. Diffusion Mechanisms and Lattice Locations of Thermal-Equilibrium Defects in Si-Ge Alloys

    CERN Multimedia

    Lyutovich, K; Touboltsev, V; Laitinen, P O; Strohm, A

    2002-01-01

    It is generally accepted that Ge and Si differ considerably with respect to intrinsic-point-defect-mediated diffusion. In Ge, the native point defects dominating under thermal-equilibium conditions at all solid-state temperatures accessible in diffusion experiments are vacancies, and therefore Ge self-diffusion is vacancy-controlled. In Si, by contrast, self-interstitials and vacancies co-exist in thermal equilibrium. Whereas in the most thoroughly investigated temperature regime above about 1000$^\\circ$C Si self-diffusion is self-interstitial-controlled, it is vacancy-controlled at lower temperatures. According to the scenario displayed above, self-diffusion in Si-Ge alloys is expected to change from an interstitialcy mechanism on the Si side to a vacancy mechanism on the Ge side. Therefore, $^{71}$Ge self-diffusion experiments in Si$_{1- \\it y}$Ge$_{\\it y}$ as a function of composition Y are highly interesting. In a first series of experiments the diffusion of Ge in 0.4 to 10 $\\mu$m thick, relaxed, low-disl...

  13. Local structure and thermoelectric properties of Mg{sub 2}Si{sub 0.977−x}Ge{sub x}Bi{sub 0.023} (0.1 ⩽ x ⩽ 0.4)

    Energy Technology Data Exchange (ETDEWEB)

    Farahi, Nader [Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1 (Canada); Prabhudev, Sagar; Botton, Gianluigi A. [Materials Science and Engineering Department, McMaster University, Hamilton, ON L8S 4L8 (Canada); Zhao, Jianbao; Tse, John S. [Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, SK S7N 5E2 (Canada); Liu, Zhenxian [Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015 (United States); Salvador, James R. [General Motors Research & Development Center, Warren, MI 48090 (United States); Kleinke, Holger, E-mail: kleinke@uwaterloo.ca [Department of Chemistry and Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, ON N2L 3G1 (Canada)

    2015-09-25

    Highlights: • Incorporating Ge into Bi-doped Mg{sub 2}Si decreases the thermal conductivity and enhances the thermoelectric performance. • Ge-rich domains, identified via TEM, contribute to these changes. • Interstitial sites are in part filled with Mg atoms, as revealed via TEM. • Doping with Bi is advantageous over doping with Sb, resulting in an increase of 48% of the thermoelectric figure of merit. • The highest figure-of-merit of these materials is zT{sub max} = 0.7 at 773 K, realized for Mg{sub 2}Si{sub 0.677}Ge{sub 0.3}Bi{sub 0.023}. - Abstract: We investigated the effect of germanium substitution for silicon in bismuth doped Mg{sub 2}Si. This alloying reduces the thermal conductivity from above 7 W m{sup −1} K{sup −1} to 2.7 W m{sup −1} K{sup −1} at around 300 K in part due to the added mass contrast. High resolution transmission electron microscopy (HRTEM) revealed the presence of Ge-rich domains within the Mg{sub 2}(Si,Ge,Bi) particles, contributing to decreasing thermal conductivity with increasing Ge content up to 0.3 Ge per formula unit. The electrical conductivity also decreases with Ge alloying because of the increasing amount of scattering centers, while the Seebeck coefficient increased only very slightly. In total, the positive effect of Ge substitution on the thermoelectric properties of Bi doped Mg{sub 2}Si resulted in a figure of merit of 0.7 at 773 K for Mg{sub 2}Si{sub 0.677}Ge{sub 0.3}Bi{sub 0.023} sample. The optimum amount of Bi seems to be 0.023 per formula unit (0.77 at%), since lower Bi content resulted in electrical conductivity that is too low, and higher Bi content generated the Mg{sub 3}Bi{sub 2} intermetallic phase.

  14. Activation and thermal stability of ultra-shallow B+-implants in Ge

    International Nuclear Information System (INIS)

    Yates, B. R.; Darby, B. L.; Jones, K. S.; Petersen, D. H.; Hansen, O.; Lin, R.; Nielsen, P. F.; Romano, L.; Doyle, B. L.; Kontos, A.

    2012-01-01

    The activation and thermal stability of ultra-shallow B + implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B + implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B + implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 10 13 to 5.0 × 10 15 cm −2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H + beam by utilizing the 11 B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

  15. Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Kedong, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China); Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie; Pettes, Michael T.; Shi, Li, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn [Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712 (United States); Matsushita, Satoshi; Akagi, Kazuo [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Goh, Munju [Department of Polymer Chemistry, Kyoto University, Kyoto 615-8510 (Japan); Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Eunha-ri san 101, Bondong-eup, Wanju-gun, Jeolabuk-do 565-905 (Korea, Republic of)

    2013-11-21

    Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m{sup −1} K{sup −1} near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion.

  16. Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

    International Nuclear Information System (INIS)

    Bi, Kedong; Weathers, Annie; Pettes, Michael T.; Shi, Li; Matsushita, Satoshi; Akagi, Kazuo; Goh, Munju

    2013-01-01

    Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m −1  K −1 near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, the PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion

  17. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    International Nuclear Information System (INIS)

    Ghandi, R.; Kolahdouz, M.; Hallstedt, J.; Wise, R.; Wejtmans, Hans; Radamson, H.H.

    2008-01-01

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si 1-x Ge x (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers

  18. Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Ghandi, R. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: ghandi@kth.se; Kolahdouz, M.; Hallstedt, J. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden); Wise, R.; Wejtmans, Hans [Texas Instrument, 13121 TI Boulevard, Dallas, Tx 75243 (United States); Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-11-03

    In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si{sub 1-x}Ge{sub x} (x = 0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

  19. Establishment of Ge-doped optical fibres as thermoluminescence dosimeters for brachytherapy

    International Nuclear Information System (INIS)

    Issa, Fatma; Abdul Rahman, A.T.; Hugtenburg, Richard P.; Bradley, David A.; Nisbet, Andrew

    2012-01-01

    This study aims to establish the sensitive, ∼120 μm high spatial resolution, high dynamic range Ge-doped optical fibres as thermoluminescence (TL) dosimeters for brachytherapy dose distribution. This requires investigation to accommodate sensitivity of detection, both for the possibility of short range dose deposition from beta components as well as gamma/x-mediated dose. In-air measurements are made at distances close to radionuclide sources, evaluating the fall off in dose along the transverse axis of 133 Ba and 60 Co radioactive sources, at distances from 2 mm up to 20 mm from their midpoints. Measurements have been compared with Monte Carlo code DOSRZnrc simulations for photon-mediated dose only, agreement being obtained to within 3% and 1% for the 133 Ba and 60 Co sources, respectively. As such, in both cases it is determined that as intended, beta dose has been filtered out by source encapsulation. - Highlights: ► We seek to establish Ge-doped optical fibres as TLDs for brachytherapy. ► Dose was evaluated along the central axis of 133 Ba and 60 Co, at 2 mm–20 mm. ► We verify values using DOSRZnrc Monte Carlo code simulations. ► Good agreement is between dose measurements and calculation to within 3% and 1%. ► Methodology is to be used in obtaining doses around 125 I and 192 Ir sources.

  20. Thermal properties of Rhea's Poles: Evidence for a Meter-Deep Unconsolidated Subsurface Layer

    Science.gov (United States)

    Howett, C. J. A.; Spencer, J. R.; Hurford, T.; Verbiscer, A.; Segura, M.

    2016-01-01

    Cassini's Composite Infrared Spectrometer (CIRS) observed both of Rhea's polar regions during a close (2000 km) flyby on 9th March 2013 during orbit 183. Rhea's southern pole was again observed during a more distant (51,000 km) flyby on 10th February 2015 during orbit 212. The results show Rhea's southern winter pole is one of the coldest places directly observed in our Solar System: surface temperatures of 25.4 +/-7.4 K and 24.7 +/-6.8 K are inferred from orbit 183 and 212 data, respectively. The surface temperature of the northern summer pole inferred from orbit 183 data is warmer: 66.6 +/-0.6 K. Assuming the surface thermophysical properties of the two polar regions are comparable then these temperatures can be considered a summer and winter seasonal temperature constraint for the polar region. Orbit 183 will provide solar longitude ( LS ) coverage at 133 deg and 313 deg for the summer and winter poles respectively, while orbit 212 provides an additional winter temperature constraint at LS 337 deg. Seasonal models with bolometric albedo values between 0.70 and 0.74 and thermal inertia values between 1 and 46 J m( exp -2) K( exp -1) s (exp -1/2) (otherwise known as MKS units) can provide adequate fits to these temperature constraints (assuming the winter temperature is an upper limit). Both these albedo and thermal inertia values agree within the uncertainties with those previously observed on both Rhea's leading and trailing hemispheres. Investigating the seasonal temperature change of Rhea's surface is particularly important, as the seasonal wave is sensitive to deeper surface temperatures ( approximately tens of centimeters to meter depths) than the more commonly reported diurnal wave (typically less than a centimeter), the exact depth difference dependent upon the assumed surface properties. For example, if a surface porosity of 0.5 and thermal inertia of 25 MKS is assumed then the depth of the seasonal thermal wave is 76 cm, which is much deeper than the

  1. Doping dependence of electrical and thermal conductivity of nanoscale polyaniline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin Jiezhu; Wang Qing [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Haque, M A [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2010-05-26

    We performed simultaneous characterization of electrical and thermal conductivity of 55 nm thick polyaniline (PANI) thin films doped with different levels of camphor sulfonic acids (CSAs). The effect of the doping level is more pronounced on electrical conductivity than on thermal conductivity of PANIs, thereby greatly affecting their ratio that determines the thermoelectric efficiency. At the 60% (the molar ratio of CSA to phenyl-N repeat unit of PANI) doping level, PANI exhibited the maximum electrical and thermal conductivity due to the formation of mostly delocalized structures. Whereas polarons are the charge carriers responsible for the electrical conduction, phonons are believed to play a dominant role in the heat conduction in nanoscale doped PANI thin films.

  2. Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

    Science.gov (United States)

    Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

    2017-01-01

    Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity

  3. Local structural environments of Ge doped in eutectic Sb-Te film before and after crystallization

    Science.gov (United States)

    Shin, Sang Yeol; Cheong, Byung-ki; Choi, Yong Gyu

    2018-06-01

    Electrical phase change device using the Ge-doped eutectic Sb-Te (e.g., Ge1Sb8Te2) film is known to exhibit improved energy efficiency thanks to lowered threshold voltage as well as decreased power consumption for the reset operation, as compared with Ge2Sb2Te5 film. Ge K-edge EXAFS analysis is employed in this study in an effort to elucidate such merits of Ge1Sb8Te2 film in connection with its local atomic arrangements. It is then verified that a Ge atom is four-fold coordinated in its nearest-neighboring shell both in the as-deposited and in the annealed films. It needs to be highlighted that approximately two Sb atoms constitute the Ge tetrahedral units in its amorphous state; however, after being crystallized, heteropolar Ge-Sb bonds hardly exist in this Ge1Sb8Te2 film. It has been known that crystallization temperature and activation energy for crystallization of this Ge1Sb8Te2 composition are greater than those of Ge2Sb2Te5 composition. In addition, these two phase change materials exhibit distinctly different crystallization mechanisms, i.e., nucleation-dominant for Ge2Sb2Te5 film but growth-dominant for Ge1Sb8Te2 film. These discrepancies in the crystallization-related properties are delineated in terms of the local structural changes verified from the present EXAFS analysis.

  4. Thermal conductivity of mesoporous films measured by Raman spectroscopy

    Science.gov (United States)

    Stoib, B.; Filser, S.; Petermann, N.; Wiggers, H.; Stutzmann, M.; Brandt, M. S.

    2014-04-01

    We measure the in-plane thermal conductance of mesoporous Ge and SiGe thin films using the Raman-shift method and, based on a finite differences simulation accounting for the geometry of the sample, extract the in-plane thermal conductivity. For a suspended thin film of laser-sintered SiGe nanoparticles doped with phosphorus, we find an effective in-plane thermal conductivity of 0.05 W/m K in vacuum for a temperature difference of 400 K and a mean temperature of 500 K. Under similar conditions, the effective in-plane thermal conductivity of a laser-sintered undoped Ge nanoparticle film is 0.5 W/m K. Accounting for a porosity of approximately 50%, the normalized thermal conductivities are 0.1 W/m K and 1 W/m K, respectively. The thermoelectric performance is discussed, considering that the electrical in-plane conductivity is also affected by the mesoporosity.

  5. Behaviour of Ti-doped CFCs under thermal fatigue tests

    Energy Technology Data Exchange (ETDEWEB)

    Centeno, A. [Instituto Nacional del Carbon (CSIC), Apdo. 73, 33080 Oviedo (Spain); Pintsuk, G.; Linke, J. [Forschungszentrum Juelich GmbH, EURATOM Association, 52425 Juelich (Germany); Gualco, C. [Ansaldo Energia, I-16152 Genoa (Italy); Blanco, C., E-mail: clara@incar.csic.es [Instituto Nacional del Carbon (CSIC), Apdo. 73, 33080 Oviedo (Spain); Santamaria, R.; Granda, M.; Menendez, R. [Instituto Nacional del Carbon (CSIC), Apdo. 73, 33080 Oviedo (Spain)

    2011-01-15

    In spite of the remarkable progress in the design of in-vessel components for the divertor of the first International Thermonuclear Experimental Reactor (ITER), a great effort is still put into the development of manufacturing technologies for carbon armour with improved properties. Newly developed 3D titanium-doped carbon fibre reinforced composites and their corresponding undoped counterparts were brazed to a CuCrZr heat sink to produce actively cooled flat tile mock-ups. By exposing the mock-ups to thermal fatigue tests in an electron beam test facility, the material behaviour and the brazing between the individual constituents in the mock-up was qualified. The mock-ups with titanium-doped CFCs exhibited a significantly improved thermal fatigue resistance compared with those undoped materials. The comparison of these mock-ups with those produced using pristine NB31, one of the reference materials as plasma facing material for ITER, showed almost identical results, indicating the high potential of Ti-doped CFCs due to their improved thermal shock resistance.

  6. Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses for fiber amplifiers at 1.3 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Simons, D.R.; Faber, A.J.; de Waal, H. [Glass Technology, Eindhoven University of Technology, P.O. Box 595, 5600 AN Eindhoven (Netherlands)

    1995-03-01

    The photoluminescence properties of Pr{sup 3+}-doped GeS{sub {ital x}}-based glasses are studied and compared with those of other sulfide and fluoride glasses. The possibility of highly pump-power-efficient fiber amplifiers based on these GeS{sub {ital x}}-containing glasses in the telecommunications window at 1.3 {mu}m is discussed.

  7. Thermal conductivity of hexagonal Si, Ge, and Si1-xGex alloys from first-principles

    Science.gov (United States)

    Gu, Xiaokun; Zhao, C. Y.

    2018-05-01

    Hexagonal Si and Ge with a lonsdaleite crystal structure are allotropes of silicon and germanium that have recently been synthesized. These materials as well as their alloys are promising candidates for novel applications in optoelectronics. In this paper, we systematically study the phonon transport and thermal conductivity of hexagonal Si, Ge, and their alloys by using the first-principle-based Peierls-Boltzmann transport equation approach. Both three-phonon and four-phonon scatterings are taken into account in the calculations as the phonon scattering mechanisms. The thermal conductivity anisotropy of these materials is identified. While the thermal conductivity parallel to the hexagonal plane for hexagonal Si and Ge is found to be larger than that perpendicular to the hexagonal plane, alloying effectively tunes the thermal conductivity anisotropy by suppressing the thermal conductivity contributions from the middle-frequency phonons. The importance of four-phonon scatterings is assessed by comparing the results with the calculations without including four-phonon scatterings. We find that four-phonon scatterings cannot be ignored in hexagonal Si and Ge as the thermal conductivity would be overestimated by around 10% (40%) at 300 K (900) K. In addition, the phonon mean free path distribution of hexagonal Si, Ge, and their alloys is also discussed.

  8. Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Tuomisto, F.; Slotte, J.

    2011-01-01

    Evolution of the chemical surroundings of vacancy complexes in Sb-doped ([Sb] = 2 × 1018 and 2 × 1019 cm−3) Si0.8Ge0.2 was studied with positron annihilation spectroscopy in Doppler broadening mode. The study was performed by annealing the samples both isochronally and isothermally. Defect...... evolution was observed at the temperature range 450–650 K. Both treatments were shown to induce changes in the chemical surroundings of the E-centers via introduction of Ge near the defects. Moreover, Sb was found to hinder these changes by stabilizing the E-centers and thus preventing them from finding Ge....... The stable state reached after the anneals was found to differ from that measured from an as-grown sample. This difference was deemed to be the result of Ge gathering in small clusters during the annealing thus breaking the initially random Ge distribution....

  9. Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

    International Nuclear Information System (INIS)

    Mikryukova, E.V.; Morozov, A.N.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

    1988-01-01

    Peculiarities of dislocation and microdefect formation in InP monocrystals doped with donor (S,Ge) and acceptor (Zn) impurities are investigated by the metallography. Dependence of dislocation density on the concentration of alloying impurity is established. Microdefects leading to the appearance of 5 different types of etch figures are shown to be observed in doped InP monocrystals. The mechanism of microdefect formation is suggested

  10. The Relationship between Nanocluster Precipitation and Thermal Conductivity in Si/Ge Amorphous Multilayer Films: Effects of Cu Addition

    Directory of Open Access Journals (Sweden)

    Ahmad Ehsan Mohd Tamidi

    2016-01-01

    Full Text Available We have used a molecular dynamics technique to simulate the relationship between nanocluster precipitation and thermal conductivity in Si/Ge amorphous multilayer films, with and without Cu addition. In the study, the Green-Kubo equation was used to calculate thermal conductivity in these materials. Five specimens were prepared: Si/Ge layers, Si/(Ge + Cu layers, (Si + Cu/(Ge + Cu layers, Si/Cu/Ge/Cu layers, and Si/Cu/Ge layers. The number of precipitated nanoclusters in these specimens, which is defined as the number of four-coordinate atoms, was counted along the lateral direction of the specimens. The observed results of precipitate formation were considered in relation to the thermal conductivity results. Enhancement of precipitation of nanoclusters by Cu addition, that is, densification of four-coordinate atoms, can prevent the increment of thermal conductivity. Cu dopant increases the thermal conductivity of these materials. Combining these two points, we concluded that Si/Cu/Ge is the best structure to improve the conversion efficiency of the Si/Ge amorphous multilayer films.

  11. Establishment of Ge-doped optical fibres as thermoluminescence dosimeters for brachytherapy

    Energy Technology Data Exchange (ETDEWEB)

    Issa, Fatma, E-mail: f.issa@surrey.ac.uk [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Radiotherapy, Tripoli Medical Centre (TMC), Tripoli (Libya); Abdul Rahman, A.T. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia, Campus of Negeri Sembilan, 72000 Kuala Pilah (Malaysia); Hugtenburg, Richard P. [Department of Medical Physics and Clinical Engineering, Abertawe Bro Morgannwg UHB and School of Medicine, Swansea University, Swansea, SA2 8PP (United Kingdom); Bradley, David A. [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Radiological Sciences, King Saud University, P.O. Box 10219, Riyadh 11432 (Saudi Arabia); Nisbet, Andrew [Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Department of Medical Physics, Royal Surrey County Hospital NHS Foundation Trust, Guildford, GU2 7XX (United Kingdom)

    2012-07-15

    This study aims to establish the sensitive, {approx}120 {mu}m high spatial resolution, high dynamic range Ge-doped optical fibres as thermoluminescence (TL) dosimeters for brachytherapy dose distribution. This requires investigation to accommodate sensitivity of detection, both for the possibility of short range dose deposition from beta components as well as gamma/x-mediated dose. In-air measurements are made at distances close to radionuclide sources, evaluating the fall off in dose along the transverse axis of {sup 133}Ba and {sup 60}Co radioactive sources, at distances from 2 mm up to 20 mm from their midpoints. Measurements have been compared with Monte Carlo code DOSRZnrc simulations for photon-mediated dose only, agreement being obtained to within 3% and 1% for the {sup 133}Ba and {sup 60}Co sources, respectively. As such, in both cases it is determined that as intended, beta dose has been filtered out by source encapsulation. - Highlights: Black-Right-Pointing-Pointer We seek to establish Ge-doped optical fibres as TLDs for brachytherapy. Black-Right-Pointing-Pointer Dose was evaluated along the central axis of {sup 133}Ba and {sup 60}Co, at 2 mm-20 mm. Black-Right-Pointing-Pointer We verify values using DOSRZnrc Monte Carlo code simulations. Black-Right-Pointing-Pointer Good agreement is between dose measurements and calculation to within 3% and 1%. Black-Right-Pointing-Pointer Methodology is to be used in obtaining doses around {sup 125}I and {sup 192}Ir sources.

  12. Crystal structure of a Zn-doped derivative of the Li17Ge4 compound

    International Nuclear Information System (INIS)

    Lacroix-Orio, L.; Tillard, M.; Belin, C.

    2008-01-01

    The compound Li 17-ε Zn ε Ge 4 has been obtained as a side product during the preparation of the intermetallic compound Li 8 Zn 2 Ge 3 from the elements. Its structure has been determined from single crystal X-ray diffraction intensities measured at 173 K. It crystallizes in the cubic system, F4-bar3m space group, a = 18.842(1) A, Z = 20. Its crystal structure is slightly different from those so far reported in the literature for the Zn-free phase Li 17 Ge 4 , particularly concerned are the positions and the site occupations of Li atoms. Most likely, these structural variations result from the presence of a small Zn concentration in the compound. The Zn doping atom has been found only at the specific Li 4d site (about 3 at.% Zn)

  13. Fiber-optic thermometer application of thermal radiation from rare-earth end-doped SiO2 fiber

    International Nuclear Information System (INIS)

    Katsumata, Toru; Morita, Kentaro; Komuro, Shuji; Aizawa, Hiroaki

    2014-01-01

    Visible light thermal radiation from SiO 2 glass doped with Y, La, Ce, Pr, Nd, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu were studied for the fiber-optic thermometer application based on the temperature dependence of thermal radiation. Thermal radiations according to Planck's law of radiation are observed from the SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu at the temperature above 1100 K. Thermal radiations due to f-f transitions of rare-earth ions are observed from the SiO 2 fibers doped with Nd, Dy, Ho, Er, Tm, and Yb at the temperature above 900 K. Peak intensities of thermal radiations from rare-earth doped SiO 2 fibers increase sensitively with temperature. Thermal activation energies of thermal radiations by f-f transitions seen in Nd, Dy, Ho, Er, Tm, and Yb doped SiO 2 fibers are smaller than those from SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu. Thermal radiation due to highly efficient f-f transitions in Nd, Dy, Ho, Er, Tm, and Yb ions emits more easily than usual thermal radiation process. Thermal radiations from rare-earth doped SiO 2 are potentially applicable for the fiber-optic thermometry above 900 K

  14. Vacuum thermal evaporation of polyaniline doped with camphor sulfonic acid

    Energy Technology Data Exchange (ETDEWEB)

    Boyne, Devon; Menegazzo, Nicola; Pupillo, Rachel C.; Rosenthal, Joel; Booksh, Karl S., E-mail: kbooksh@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2015-05-15

    Intrinsically conducting polymers belong to a class of organic polymers with intriguing electronic and physical properties specifically for electro-optical applications. Significant interest into doped polyaniline (PAni) can be attributed to its high conductivity and environmental stability. Poor dissolution in most solvents has thus far hindered the successful integration of PAni into commercial applications, which in turn, has led to the investigations of various deposition and acidic doping methods. Physical vapor deposition methods, including D.C. magnetron sputtering and vacuum thermal evaporation, have shown exceptional control over physical film properties (thickness and morphology). However, resulting films are less conductive than films deposited by conventional methods (i.e., spin and drop casting) due to interruption of the hyperconjugation of polymer chains. Specifically, vacuum thermal evaporation requires a postdoping process, which results in incorporation of impurities and oxidation of surface moieties. In this contribution, thermally evaporated films, sequentially doped by vacuum evaporation of an organic acid (camphorsulfonic acid, CSA) is explored. Spectroscopic evidence confirms the successful doping of PAni with CSA while physical characterization (atomic force microscopy) suggests films retain good morphology and are not damaged by the doping process. The procedure presented herein also combines other postpreparation methods in an attempt to improve conductivity and/or substrate adhesion.

  15. Thermal expansion of the superconducting ferromagnet UCoGe

    NARCIS (Netherlands)

    Gasparini, A.; Huang, Y.K.; Hartbaum, J.; v. Löhneysen, H.; de Visser, A.

    2010-01-01

    We report measurements of the coefficient of linear thermal expansion, α(T), of the superconducting ferromagnet UCoGe. The data taken on a single-crystalline sample along the orthorhombic crystal axes reveal a pronounced anisotropy with the largest length changes along the b axis. The large values

  16. Photo-isomerization induced rapid photo-degradation of optical nonlinearity in cyano substituted stilbene derivative doped poled polymer

    International Nuclear Information System (INIS)

    Yan Jieyun; Liu Liying; Ji Liyong; Ye Mingxin; Xu Lei; Wang Wencheng

    2004-01-01

    We found that, although alpha'-cyano-4'-nitro-4-N, N-dimethylaminostilbene has larger hyperpolarizability than that of conventional 4'-N, N-dimethylamino-nitrostilbene, the addition of the cyano group makes it much more easy to photo-isomerize, thus destroying the molecular ordering in poled chromophore doped polymers. Experimental evidence was obtained by monitoring the second-harmonic generation intensity, UV-Vis absorption spectrum, and FTIR spectrum. The photo-isomerization reaction process was monitored by optical pump induced absorption anisotropy measurement. Comparisons with the behaviour of a azobenzene dye are also made

  17. High power, ultra-broadband supercontinuum source based on highly GeO2 doped silica fiber

    DEFF Research Database (Denmark)

    Jain, Deepak; Sidharthan, Raghuraman; Moselund, Peter M.

    2017-01-01

    We demonstrate a 74 mol % GeO2 doped fiber for mid-infrared supercontinuum generation. Experiments ensure a highest output power for a broadest spectrum from 700nm to 3200nm from this fiber, while being pumped by a broadband 4 stage Erbium fiber based MOPA. The effect of repetition rate of pump...

  18. Effect of tungsten on the phase-change properties of Ge{sub 8}Sb{sub 2}Te{sub 11} Thin Films for the Phase-change device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Cheol-Jin; Kong, Heon; Lee, Hyun-Yong; Yeo, Jong-Bin [Chonnam National University, Gwangju (Korea, Republic of)

    2017-07-15

    In this study, the electrical, optical, and structural properties of tungsten (W)-doped Ge{sub 8}Sb{sub 2}Te{sub 11} thin films were investigated. Previously, GeSbTe alloys were doped with various materials in an attempt to improve the thermal stability. Ge{sub 8}Sb{sub 2}Te{sub 11} and W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} films with a thickness of 200 nm were fabricated by using an RF magnetron reactive co-sputtering system at room temperature on Si (p-type, 100) and glass substrate. The fabricated thin films were annealed in a furnace in the ∼ 0 - 400 ℃ temperature range. The optical properties were analyzed using a UV-Vis-IR spectrophotometer, and by using Beer’s Law equation, the optical-energy band gap (E{sub op}), slope B{sup 1/2}, and slope 1/F were calculated. For the crystalline materials, an increase in the slope B{sup 1/2} and 1/F was observed, exhibiting a good effect on the thermal stability in the amorphous state after the phase change. The structural properties were analyzed by X-ray diffraction, and the result showed that the W-doped Ge{sub 8}Sb{sub 2}Te{sub 11} had a face-centered-cubic (fcc) crystalline structure increased crystallization temperature (T{sub c}). An increase in the T{sub c} increased the thermal stability in the amorphous state. The electrical properties were analyzed using a 4-point probe, exhibiting an increase in the sheet resistance (R{sub s}) in the amorphous and the crystalline states indicating a reduced programming current in the memory device.

  19. Addition of Mn to Ge quantum dot surfaces—interaction with the Ge QD {105} facet and the Ge(001) wetting layer

    International Nuclear Information System (INIS)

    Nolph, C A; Kassim, J K; Floro, J A; Reinke, P

    2013-01-01

    The interaction of Mn with Ge quantum dots (QD), which are bounded by {105} facets, and the strained Ge wetting layer (WL), terminated by a (001) surface, is investigated with scanning tunneling microscopy (STM). These surfaces constitute the growth surfaces in the growth of Mn-doped QDs. Mn is deposited on the Ge QD and WL surface in sub-monolayer concentrations, and subsequently annealed up to a temperature of 400 ° C. The changes in bonding and surface topography are measured with STM during the annealing process. Mn forms flat islands on the Ge{105} facet, whose shape and position are guided by the rebonded step reconstruction of the facet. Voltage-dependent STM images reflect the Mn-island interaction with the empty and filled states of the Ge{105} reconstruction. Scanning tunneling spectra (STS) of the Ge{105} facet and as-deposited Mn-islands show a bandgap of 0.8 eV, and the Mn-island spectra are characterized by an additional empty state at about 1.4 eV. A statistical analysis of Mn-island shape and position on the QD yields a slight preference for edge positions, whereas the QD strain field does not impact Mn-island position. However, the formation of ultra-small Mn-clusters dominates on the Ge(001) WL, which is in contrast to Mn interaction with unstrained Ge(001) surfaces. Annealing to T 5 Ge 3 from a mass balance analysis. This reaction is accompanied by the disappearance of the original Mn-surface structures and de-wetting of Mn is complete. This study unravels the details of Mn–Ge interactions, and demonstrates the role of surface diffusion as a determinant in the growth of Mn-doped Ge materials. Surface doping of Ge-nanostructures at lower temperatures could provide a pathway to control magnetism in the Mn–Ge system. (paper)

  20. Intense 2.7 µm emission and structural origin in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass.

    Science.gov (United States)

    Guo, Yanyan; Li, Ming; Hu, Lili; Zhang, Junjie

    2012-01-15

    The 2.7 μm emission properties in Er3+-doped bismuthate (Bi2O3-GeO2-Ga2O3-Na2O) glass were investigated in the present Letter. An intense 2.7 μm emission in Er3+-doped bismuthate glass was observed. It is found that Er3+-doped bismuthate glass possesses high spontaneous transition probability A (65.26 s(-1)) and large 2.7 μm emission cross section σ(em) (9.53×10(-21) cm2) corresponding to the stimulated emission of Er3+:4I11/2→4I13/2 transition. The emission characteristic and energy transfer process upon excitation of a conventional 980 nm laser diode in bismuthate glass were analyzed. Additionally, the structure of bismuthate glass was analyzed by the Raman spectrum. The advantageous spectroscopic characteristics of Er3+ single-doped bismuthate glass together with the prominent thermal property indicate that bismuthate glass might become an attractive host for developing solid-state lasers around 2.7 μm.

  1. C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

    International Nuclear Information System (INIS)

    Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

    2016-01-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  2. Simple Regge pole model for Compton scattering of protons

    International Nuclear Information System (INIS)

    Saleem, M.; Fazal-e-Aleem

    1978-01-01

    It is shown that by a phenomenological choice of the residue functions, the differential cross section for ν p → ν p, including the very recent measurements up to - t=4.3 (GeV/c) 2 , can be explained at all measured energies greater than 2 GeV with simple Regge pole model

  3. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Ramirez-Garcia, E; Valdez-Monroy, L A; Rodriguez-Mendez, L M; Valdez-Perez, D; Galaz-Larios, M C; Enciso-Aguilar, M A; Zerounian, N; Aniel, F

    2014-01-01

    We describe a reliable technique to separate the different contributions to the apparent base resistance (R B  = R Bx  + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs. (paper)

  4. Germanium-doped gallium phosphide obtained by neutron irradiation

    Science.gov (United States)

    Goldys, E. M.; Barczynska, J.; Godlewski, M.; Sienkiewicz, A.; Heijmink Liesert, B. J.

    1993-08-01

    Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.

  5. Investigation of thermal stability and spectroscopic properties in Er3+/Yb3+-codoped TeO2-Li2O-B2O3-GeO2 glasses.

    Science.gov (United States)

    Nie, Qiu-Hua; Gao, Yuan; Xu, Tie-Feng; Shen, Xiang

    2005-06-01

    The new Er3+/Yb3+ co-doped 70TeO2-5Li2O-(25-x)B2O3-xGeO2 (x = 0, 5, 10, 15 fand 20 mol.%) glasses were prepared. The thermal stability, absorption spectra, emission spectra and lifetime of the 4I(13/2) level of Er3+ ions were measured and studied. The FT-IR spectra were carried out in order to investigate the structure of local arrangements in glasses. It is found that the thermal stability, absorption cross-section of Yb3+, emission intensity and lifetime of the 4I(13/2) level of Er3+ increase with increasing GeO2 content in the glass composition, while the fluorescence width at half maximum (FWHM) at 1.5 um of Er3+ is about 70 nm. The obtained data suggest that this system glass can be used as a candidate host material for potential broadband optical amplifiers.

  6. Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGe y/strained-Si heterostructure grown on a relaxed Si1-xGe x buffer

    International Nuclear Information System (INIS)

    Gupta, Saurabh; Lee, Minjoo L.; Isaacson, David M.; Fitzgerald, Eugene A.

    2005-01-01

    A dual channel heterostructure consisting of strained-Si/strained-Si 1-y Ge y on relaxed Si 1-x Ge x (y > x), provides a platform for fabricating metal-oxide-semiconductor field-effect transistors (MOSFETs) with high hole mobilities (μ eff ) which depend directly on Ge concentration and strain in the strained-Si 1-y Ge y layer. Ge out-diffuses from the strained-Si 1-y Ge y layer into relaxed Si 1-x Ge x during high temperature processing, reducing peak Ge concentration and strain in the strained-Si 1-y Ge y layer and degrades hole μ eff in these dual channel heterostructures. A heterostructure consisting of strained-Si/strained-Si 1-y Ge y /strained-Si, referred to as a trilayer heterostructure, grown on relaxed Si 1-x Ge x has much reduced Ge out-flux from the strained-Si 1-y Ge y layer and retains higher μ eff after thermal processing. Improved hole μ eff over similar dual channel heterostructures is also observed in this heterostructure. This could be a result of preventing the hole wavefunction tunneling into the low μ eff relaxed Si 1-x Ge x layer due to the additional valence band offset provided by the underlying strained-Si layer. A diffusion coefficient has been formulated and implemented in a finite difference scheme for predicting the thermal budget of the strained SiGe heterostructures. It shows that the trilayer heterostructures have superior thermal budgets at higher Ge concentrations. Ring-shaped MOSFETs were fabricated on both platforms and subjected to various processing temperatures in order to compare the extent of μ eff reduction with thermal budget. Hole μ eff enhancements are retained to a much higher extent in a trilayer heterostructure after high temperature processing as compared to a dual channel heterostructure. The improved thermal stability and hole μ eff of a trilayer heterostructure makes it an ideal platform for fabricating high μ eff MOSFETs that can be processed over higher temperatures without significant losses in hole

  7. Stress and phase changes in a low-thermal-expansion Al-3at.%Ge alloy film on oxidized silicon wafers

    International Nuclear Information System (INIS)

    Tu, K.N.; Rodbell, K.P.; Herd, S.R.; Mikalsen, D.J.

    1993-01-01

    The alloy of Al-3at.%Ge has been found to have a low thermal expansion and contraction in the temperature range of room temperature to 400 C. The reason for the low thermal contraction (or expansion) is the precipitation (or dissolution) of Ge in the alloy. The Ge precipitates have a diamond structure in which each Ge atom occupies a much larger atomic volume than a Ge atom dissolved substitutionally in Al. The volume difference compensates for the effect of thermal expansion and contraction with changing temperature which in turn reduces the thermal stress due to thermal mismatch. The technique of wafer bending was used to determine the stress of the alloy film on oxidized silicon wafers upon thermal cycling; indeed, it is much lower than that of pure Al on identical wafers. The morphology of precipitation and dissolution of Ge in Al has been studied by transmission and scanning electron microscopy. It is found that the precipitation follows a discontinuous mode and occurs predominantly along grain boundaries. In dissolving the Ge precipitates into Al, voids are left behind because of the volume difference. It is proposed that this may explain the enhancement of nucleation of voids in the alloy film upon thermal cycling. (orig.)

  8. Low thermal budget surface preparation of Si and SiGe

    International Nuclear Information System (INIS)

    Abbadie, A.; Hartmann, J.M.; Holliger, P.; Semeria, M.N.; Besson, P.; Gentile, P.

    2004-01-01

    Using a two-step cleaning, we have investigated the low thermal budget surface preparation of Si and Si 1-x Ge x (x=0.2-0.33). It consists of an ex situ 'HF-last' wet-cleaning and an in situ low thermal budget H 2 bake in a reduced pressure-chemical vapor deposition reactor. Using secondary ion mass spectrometry, we have evaluated the effects of different H 2 bake temperatures (in between 750 and 850 deg. C for 2 min) on the removal efficiency of C, O and F atoms still present on the surface of Si and SiGe virtual substrates after the 'HF-last' wet-cleaning. We have then examined the impact of the (wet-cleaning+H 2 bake) combination on the surface cross-hatch of SiGe as-grown virtual substrates, focusing on the analysis, notably by atomic force microscopy, of the surface topography before and after the miscellaneous thermal treatments. In situ hydrogen baking steps in between 775 and 850 deg. C do not modify the surface morphology and roughness. An easy and rapid optical characterization method, i.e. the optical interferometry, is presented as well to monitor in line the morphological changes induced by such processing steps as chemical mechanical polishing, wet-cleaning, H 2 bake, etc. Despite the lower resolution of the optical profilometer, the surface roughness values coming from it have been correctly correlated with those obtained from AFM. An optimized 'HF-last' wet-cleaning using a diluted chemistry in conjunction with a H 2 bake at 800 deg. C for 2 min (775 deg. C, 2') is a good compromise for SiGe (Si) surface preparation

  9. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  10. Thermoluminescence response of Ge-, Al- and Nd- doped optical fibers by 6 MeV - electron and 6 MeV - photon irradiations

    International Nuclear Information System (INIS)

    Hossain, I.; Moburak, A. A.; Saeed, M.A.; Wagiran, H.; Hida, N.; Yaakob, H.N.

    2015-01-01

    In this paper, we report the prediction of thermoluminescence responses of Neodymium-doped SiO 2 optical fibre with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MeV - electron irradiations without requirement for experimental measurements. A technique has been developed to calculate prediction of 6 MeV - electron response of Neodymium-doped SiO 2 optical fibre by observing the measured TL response of 6 MV - photon and the ratio of known measured photon/electron yield ratio distribution for Ge-doped, Al-doped optical fibre and standard TLD 100 dosimeter. The samples were kept in gelatin capsule an irradiated with 6 MV - photon at the dose range from 0.5 Gy to 4.0 Gy. Siemens model Primus 3368 linear accelerator located at Hospital Sultan Ismail, Johor Bahru has been used to deliver the photon beam to the samples. We found the average response ratio of 6 MV - photon and 6 MeV - electron in Ge-doped, Al-doped optical fibre and standard TLD-100 dosimeter are 0.83(3). Observing the measured value of 6 MV - photon irradiation this average ratio is useful to find the prediction of thermoluminescence responses by 6 MeV - electron irradiation of Neodymium-doped SiO 2 optical fibre by the requirement for experimental measurements with various dose ranges from 0.5 Gy to 4.0 Gy by 6 MV - photon irradiations.

  11. Long afterglow properties of Eu2+/Mn2+ doped Zn2GeO4

    International Nuclear Information System (INIS)

    Wan, Minhua; Wang, Yinhai; Wang, Xiansheng; Zhao, Hui; Li, Hailing; Wang, Cheng

    2014-01-01

    Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized via a high temperature solid state reaction. X-ray diffraction (XRD), afterglow spectra, decay curves and thermoluminescence curves were utilized to characterize the samples. The X-ray diffraction phases indicate that the doping of small amount of transition metal ions or rare earth ions has no significant influence on the crystal structure of Zn 2 GeO 4 . According to the afterglow spectra, we found that the Zn 2 GeO 4 :Eu 2+ 0.01 exhibits a broad band emission with a peak at 474 nm, which could be ascribed to Eu 2+ transition between 4f 6 5d 1 and 4f 7 electron configurations. The Zn 2 GeO 4 :Mn 2+ 0.01 shows a narrow band emission peaking at 532 nm corresponding to the characteristic transition of Mn 2+ ( 4 T 1 → 6 A 1 ). The thermoluminescence (TL) curves above room temperature are employed for the discussion of the origin of the traps and the mechanism of the persistent luminescence. The results indicate that Zn 2 GeO 4 may be an excellent host material for the rare earth ions or transition metal ions long afterglows. -- Highlights: • Zn 2 GeO 4 :Eu 2+ 0.01 and Zn 2 GeO 4 :Mn 2+ 0.01 long afterglow phosphors were synthesized. • Found that these phosphors possess a persistent luminescence property. • The long afterglow spectra were measured. • Found that these phosphors possess a trap level by thermoluminescence

  12. Synthesis and characterization of Ge–Cr-based intermetallic compounds: GeCr3, GeCCr3, and GeNCr3

    International Nuclear Information System (INIS)

    Lin, S.; Tong, P.; Wang, B.S.; Huang, Y.N.; Song, W.H.; Sun, Y.P.

    2014-01-01

    Highlights: • Polycrystalline samples of GeCr 3 , GeCCr 3 , and GeNCr 3 are synthesized by using solid state reaction method. • A good quality of our samples is verified by the Rietveld refinement and electrical transport measurement. • We present a comprehensive understanding of physical properties of GeCr 3 , GeCCr 3 , and GeNCr 3 . -- Abstract: We report the synthesis of GeCr 3 , GeCCr 3 , and GeNCr 3 polycrystalline compounds, and present a systematic study of this series by the measurements of X-ray diffraction (XRD), magnetism, electrical/thermal transport, specific heat, and Hall coefficient. Good quality of our samples is verified by quite small value of residual resistivity and considerably large residual resistivity ratio. Based on the Rietveld refinement of XRD data, the crystallographic parameters are obtained, and, correspondingly, the sketches of crystal structure are plotted for all the samples. The ground states of GeCr 3 , GeCCr 3 , and GeNCr 3 are paramagnetic/antiferromagnetic metal, and even a Fermi-liquid behavior is observed in electrical transport at low temperatures. Furthermore, the analysis of the thermal conductivity data suggests the electron thermal conductivity plays a major role in total thermal conductivity for GeCr 3 at low temperatures, while the phonon thermal conductivity is dominant for GeCCr 3 and GeNCr 3 at high temperatures. The negative value of Seebeck coefficient and Hall coefficient indicate that the charge carriers are electron-type for GeCr 3 , GeCCr 3 , and GeNCr 3

  13. Mn-doped Ge self-assembled quantum dots via dewetting of thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aouassa, Mansour, E-mail: mansour.aouassa@yahoo.fr [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Jadli, Imen [LMON, Faculté des Sciences de Monastir, Avenue de l’environnement Monastir 5019 (Tunisia); Bandyopadhyay, Anup [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Kim, Sung Kyu [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of); Karaman, Ibrahim [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Lee, Jeong Yong [Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Yuseong-daero 1689-gil, Yuseong-gu, Daejeon (Korea, Republic of); Department of Materials Science and Engineering, KAIST 291 Daehak-ro, Yuseong-gu, Daejeon (Korea, Republic of)

    2017-03-01

    Highlights: • We report the new fabrication approach for producing a self- assembled Mn dpoed Ge quantum dots (QDs) on SiO{sub 2} thin film with a Curie temperature above room temperature. These magnetic QDs are crystalline, monodisperse and have a well-defined shape and a controlled size. The investigation opens new routes for elaboration of self-assembled magnetic nanocrystals - Abstract: In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO{sub 2} thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO{sub 2} thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology.

  14. XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(0 0 1) substrates

    International Nuclear Information System (INIS)

    Franco, N.; Barradas, N.P.; Alves, E.; Vallera, A.M.; Morris, R.J.H.; Mironov, O.A.; Parker, E.H.C.

    2005-01-01

    Ge/Si 1-x Ge x inverted modulation doped heterostructures with Ge channel thickness of 16 and 20 nm were grown by a method of hybrid epitaxy followed by ex situ annealing at 650 deg. C for p-HMOS application. The thicker layers of the virtual substrate (6000 nm graded SiGe up to x = 0.6 and 1000 nm uniform composition with x = 0.6) were produced by ultrahigh vacuum chemical vapor deposition (UHV-CVD) while the thinner, Si(2 nm)-SiGe(20 nm)-Ge-SiGe(15 nm + 5 nm B-doped + 20 nm) active layers were grown by low temperature solid-source (LT-SS) MBE at T = 350 deg. C. As-grown and annealed samples were measured by X-ray diffraction (XRD). Reciprocal space maps (RSMs) allowed us to determine non-destructively the precise composition (∼1%) and strain of the Ge channel, along with similar information regarding the other layers that made up the whole structure. Layer thickness was determined with complementary high-resolution Rutherford backscattering (RBS) experiments

  15. Thermal conductivity and heat transport properties of nitrogen-doped graphene.

    Science.gov (United States)

    Goharshadi, Elaheh K; Mahdizadeh, Sayyed Jalil

    2015-11-01

    In the present study, the thermal conductivity (TC) and heat transport properties of nitrogen doped graphene (N-graphene) were investigated as a function of temperature (107-400K) and N-doped concentration (0.0-7.0%) using equilibrium molecular dynamics simulation based on Green-Kubo method. According to the results, a drastic decline in TC of graphene observed at very low N-doped concentration (0.5 and 1.0%). Substitution of just 1.0% of carbon atoms with nitrogens causes a 77.2, 65.4, 59.2, and 53.7% reduction in TC at 107, 200, 300, and 400K, respectively. The values of TC of N-graphene at different temperatures approach to each other as N-doped concentration increases. The results also indicate that TC of N-graphene is much less sensitive to temperature compared with pristine graphene and the sensitivity decreases as N-doped concentration increases. The phonon-phonon scattering relaxation times and the phonon mean free path of phonons were also calculated. The contribution of high frequency optical phonons for pristine graphene and N-graphene with 7.0% N-doped concentration is 0-2% and 4-8%, respectively. These findings imply that it is potentially feasible to control heat transfer on the nanoscale when designing N-graphene based thermal devices. Copyright © 2015 Elsevier Inc. All rights reserved.

  16. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

    International Nuclear Information System (INIS)

    Simon, Roland B.; Anaya, Julian; Kuball, Martin

    2014-01-01

    The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates

  17. Higher-order quasi-phase matched second harmonic generation in periodically poled MgO-doped stoichiometric LiTaO3

    International Nuclear Information System (INIS)

    Yu, Nan Ei; Kurimura, Sunao; Kitamura, Kenji

    2005-01-01

    A periodically poled device was investigated by using fourth-order quasi-phase-matched (QPM) second harmonic generation (SHG) in MgO-doped stoichiometric lithium tantalate (LiTaO 3 ). The effective nonlinear coefficient was found be 2.4 pm/V by using fourth-order QPM SHG at the fundamental wavelength of 1064 nm. For first-order QPM SHG, the effective value of d 33 could be 9.2 pm/V. Using the sensitive higher-order QPM SHG method, we investigated the relationship between the domain duty ratio and the conversion efficiency.

  18. Photoluminescence measurements of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As

    International Nuclear Information System (INIS)

    Furtado, M.T.; Weid, J.P. von der.

    1984-01-01

    The photoluminescence of the 1,55 eV band of Ge doped Al sub(x)Ga sub(1-x)As, with x=0.30-0.33, grown by liquid phase epitaxy is presented. The broad shape was found to be due to a lattice relaxation upon optical transitions. Resonant modes with (h/2π)ω sub(q) approx. 35 + - 2 meV and (h/2π) ω sub(q) approx. 45 + - 2 meV are found for the optical band, yielding a zero phonon transition energy - 1.73 + - 0.02 eV and a Franck-Condon shift approx. 0.17-0.20 eV for the optical center. The activation energy of thermal quenching yields an associated donnor binding energy of 0.17 + - 0.04 eV. Possible mechanisms for the radiative transitions are discussed. (Author) [pt

  19. Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

    2015-10-01

    We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

  20. An investigation of the thermoluminescence of Ge-doped SiO2 optical fibres for application in interface radiation dosimetry

    International Nuclear Information System (INIS)

    Abdul Rahman, A.T.; Hugtenburg, R.P.; Abdul Sani, Siti Fairus; Alalawi, A.I.M.; Issa, Fatma; Thomas, R.; Barry, M.A.; Nisbet, A.; Bradley, D.A.

    2012-01-01

    We investigate the ability of high spatial resolution (∼ 120 μm) Ge-doped SiO 2 TL dosimeters to measure photoelectron dose enhancement resulting from the use of a moderate to high-Z target (an iodinated contrast media) irradiated by 90 kVp X-rays. We imagine its application in a novel radiation synovectomy technique, modelled by a phantom containing a reservoir of I 2 molecules at the interface of which the doped silica dosimeters are located. Measurements outside of the iodine photoelectron range are provided for using a stepped-design that allows insertion of the fibres within the phantom. Monte Carlo simulation (MCNPX) is used for verification. At the phantom medium I 2 -interface additional photoelectron generation is observed, ∼60% above that in the absence of the I 2 , simulations providing agreement to within 3%. Percentage depth doses measured away from the iodine contrast medium reservoir are bounded by published PDDs at 80 kVp and 100 kVp. - Highlights: ▶ Studies of dosimetric characteristic of commercially available doped silica optical fibres. ▶ Investigation of the potential of the dosimeter in dose enhancement measurement. ▶ Use of photoelectron dose enhancement as might be applied in radiation synovectomy. ▶ Measurement of the percentage depth dose recorded by Ge-doped silica optical fibres. ▶ The Monte Carlo simulation provides comparison against measured data.

  1. Neutron Transmutation Doped (NTD) germanium thermistors for sub-mm bolometer applications

    Science.gov (United States)

    Haller, E. E.; Itoh, K. M.; Beeman, J. W.

    1996-01-01

    Recent advances in the development of neutron transmutation doped (NTD) semiconductor thermistors fabricated from natural and controlled isotopic composition germanium are reported. The near ideal doping uniformity that can be achieved with the NTD process, the device simplicity of NTD Ge thermistors and the high performance of cooled junction field effect transistor preamplifiers led to the widespread acceptance of these thermal sensors in ground-based, airborne and spaceborne radio telescopes. These features made possible the development of efficient bolometer arrays.

  2. Thermal analysis and improvement of cascode GaN device package for totem-pole bridgeless PFC rectifier

    International Nuclear Information System (INIS)

    She, Shuojie; Zhang, Wenli; Liu, Zhengyang; Lee, Fred C.; Huang, Xiucheng; Du, Weijing; Li, Qiang

    2015-01-01

    The totem-pole bridgeless power factor correction (PFC) rectifier has a simpler topology and higher efficiency than other boost-type bridgeless PFC rectifiers. Its promising performance is enabled by using high-voltage gallium nitride (GaN) high-electron-mobility transistors, which have considerably better figures of merit (e.g., lower reverse recovery charges and less switching losses) than the state-of-the-art silicon metal-oxide-semiconductor field-effect transistors. Cascode GaN devices in traditional packages, i.e., the TO-220 and power quad flat no-lead, are used in the totem-pole PFC boost rectifier. But the parasitic inductances induced by the traditional packages not only significantly deteriorate the switching characteristics of the discrete GaN device but also adversely affect the performance of the built PFC rectifier. A new stack-die packaging structure with an embedded capacitor has been introduced and proven to be efficient in reducing parasitic ringing at the turn-off transition and achieving true zero-voltage-switching turn-on. However, the thermal dissipation capability of the device packaged in this configuration becomes a limitation on further pushing the operating frequency and the output current level for high-efficiency power conversion. This paper focuses on the thermal analysis of the cascode GaN devices in different packages and the GaN-based multichip module used in a two-phase totem-pole bridgeless PFC boost rectifier. A series of thermal models are built based on the actual structures and materials of the packaged devices to evaluate their thermal performance. Finite element analysis (FEA) simulation results of the cascode GaN device in a flip-chip format demonstrate the possibility of increasing the device switching speed while maintaining the peak temperature of the device below 125 °C. Thermal analysis of the GaN-based power module in a very similar structure is also conducted using the FEA method. Experimental data measured using

  3. Novel high resolution 125I brachytherapy source dosimetry using Ge-doped optical fibres

    International Nuclear Information System (INIS)

    Issa, Fatma; Hugtenburg, Richard P.; Nisbet, Andrew; Bradley, David A.

    2013-01-01

    The steep dose gradients close to brachytherapy sources limit the ability to obtain accurate measurements of dose. Here we use a novel high spatial resolution dosimeter to measure dose around a 125 I source and compare against simulations. Ge-doped optical fibres, used as thermoluminescent dosimeters, offer sub-mm spatial resolution, linear response from 10 cGy to >1 kGy and dose-rate independence. For a 125 I brachytherapy seed in a PMMA phantom, doses were obtained for source-dosimeter separations from 0.1 cm up to several cm, supported by EGSnrc/DOSRZznrc Monte Carlo simulations and treatment planning system data. The measurements agree with simulations to within 2.3%±0.3% along the transverse and perpendicular axes and within 3.0%±0.5% for measurements investigating anisotropy in angular dose distribution. Measured and Veriseed™ brachytherapy treatment planning system (TPS) values agreed to within 2.7%±0.5%. Ge-doped optical fibre dosimeters allow detailed dose mapping around brachytherapy sources, not least in situations of high dose gradient. - Highlights: • We evaluate fall-off in dose for distances from an 125 I source of 1 mm to 60 mm. • The TL of optical fibres accommodate high dose gradients and doses that reduce by a factor of 10 3 across the range of separations. • We verify measured values using DOSRZnrc Monte Carlo code simulations and the Variseed™ Treatment Planning System. • Measured radial and angular dose are obtained with ≤3% uncertainty

  4. Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

    Science.gov (United States)

    Zhang, Zhen-Ying; Chen, Fen; Lu, Shun-Bin; Wang, Yong-Hui; Shen, Xiang; Dai, Shi-Xun; Nie, Qiu-Hua

    2015-06-01

    Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb-Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices. Project supported by the National Key Basic Research Program of China (Grant No. 2012CB722703), the National Natural Science Foundation of China (Grant No. 61377061), the Young Leaders of Academic Climbing Project of the Education Department of Zhejiang Province, China (Grant No. pd2013092), the Program for Innovative Research Team of Ningbo City, China (Grant No. 2009B217), and the K. C. Wong Magna Fund in Ningbo University, China.

  5. Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Tianzhuo Zhan

    2015-04-01

    Full Text Available In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for two simulation cells of different sizes. The resulting thermal boundary resistance decreased with increasing temperature. The thermal boundary resistance was smaller for the large cell than for the small cell. Furthermore, the MD-predicted values were lower than the diffusion mismatch model (DMM-predicted values. The phonon density of states (DOS was calculated for all the cases to examine the underlying nature of the temperature dependence and size effect of thermal boundary resistance. We found that the phonon DOS was modified in the interface regions. The phonon DOS better matched between Si and Ge in the interface region than in the bulk region. Furthermore, in interface Si, the population of low-frequency phonons was found to increase with increasing temperature and cell size. We suggest that the increasing population of low-frequency phonons increased the phonon transmission coefficient at the interface, leading to the temperature dependence and size effect on thermal boundary resistance.

  6. Thermal hypersensitisation and grating evolution in Ge-doped optical fibre

    DEFF Research Database (Denmark)

    Sørensen, Henrik Rokkjær; Canning, John; Kristensen, Martin

    2005-01-01

    Low temperature (sub 1000°C) thermal hypersensitisation is reported in germanosilicate optical waveguides. Gratings are written using a CW 266nm laser source. In contrast to laser hypersensitisation, thermal excitation is generally dispersive involving a range of specific glass sites. More comple...... grating profiles presenting evidence of solid-state autocatalysis and bistability at increasingly high sensitisation temperatures are observed. More specifically, at 500°C, a behaviour resembling type IIA grating response is observed....

  7. Effects of alkali ions on thermal stability and spectroscopic properties of Er{sup 3+}-doped gallogermanate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Shi, D.M.; Zhao, Y.G.; Wang, X.F.; Liao, G.H. [Department of Materials Science and Engineering, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Zhao, C. [Department of Physics, South China University of Technology, Guangzhou 510641 (China); MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Peng, M.Y. [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China); Zhang, Q.Y., E-mail: qyzhang@scut.edu.c [MOE Key Lab of Specially Functional Materials and Institute of Optical Communication Materials, South China University of Technology, Guangzhou 510641 (China)

    2011-02-01

    Since information transportation capacity of optical communication network increases rapidly, new optical materials are always demanded with gain bandwidth desirably much broader than traditional erbium-doped silica fiber amplifier (EDFA). We show here in this paper the erbium-doped gallogermanate glasses with a full-width at half-maximum (FWHM) more than 50 nm. Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier. -- Research highlights: {yields} We report on spectroscopic properties of Er{sup 3+}-doped Ga{sub 2}O{sub 3}-GeO{sub 2}-R{sub 2}O (GGR, R=Li, Na and K) glasses for 1.53 {mu}m fiber amplifier. Effects of alkali metal ions on the thermal stability and spectroscopic properties of Er{sup 3+}-doped GGR glasses have been investigated. {yields} Incorporation of alkali ions such as Li{sup +}, Na{sup +}, K{sup +} into the system can on the one hand improve the thermal stability of the glasses, and on the other hand enhance the emission at 1.5 {mu}m due to the {sup 4}I{sub 13/2{yields}}{sup 4}I{sub 15/2} transition of Er{sup 3+} and suppress the upconversion process at the same time. This particularly works best for the case of K{sup +} inclusion. This work might give a general idea on controlling the Er{sup 3+} luminescence by simply adjusting the glass component and find a potential laser glass applicable to developing new broadband fiber amplifier.

  8. Scale of corrections to the t-pole approximation in the quasielastic knockout of pions from nucleon by high energy electrons

    CERN Document Server

    Neudachin, V G; Yudin, N P

    2002-01-01

    Investigation of the dominant role of the simplest t-pole diagrams is completed in the processes of pion electroproduction on nucleons at quasielastic knock out kinematics and electron energies of a few GeV. Competition role of pi- and rho-meson t-pole diagrams and s-pole diagram (tree diagram) is regarded. When virtual photon mass is large enough (Q sup 2 >= 2 (GeV/c) sup 2), the latter amplitude is not essential both for longitudinal (d sigma sub L /dt) and for transverse (d sigma sub T /dt) cross sections. At Q sup 2 = 0.7 (GeV/c) sup 2 in the longitudinal cross section the interference term between pion t-pole and s-pole amplitudes is still essential. Vertex functions g subrho sub N sub N (t), obtained from the cross sections of the quasielastic knockout of rho mesons and from cross section of pion photoproduction, are compared. Their discrepancy must give impulse to the development of gauge invariant theory of pion photoproduction

  9. Effect of Fe and C doping on the thermal release of helium from aluminum

    International Nuclear Information System (INIS)

    Xiang, X.; Chen, C.A.; Liu, K.Z.; Peng, L.X.; Rao, Y.C.

    2010-01-01

    The effect of Fe and C doping on the thermal release of helium from Al implanted with 10 keV, 4.0 x 10 21 ion/m 2 He at room temperature (RT) has been investigated by thermal helium desorption spectrometry (THDS) and transmission electron microscope (TEM). The results show that Fe and C doping have significant impact on the release of helium from Al and the extent depends on the doping fluence. Proper fluence of Fe and C doping would lead to the retardation of the release of helium from Al, while excessive fluence of Fe and C doping would result in more desorption peaks and the release of helium in lower temperature ranges. Fe and C doping have different influence on the release of helium from Al, and the difference is related with the secondary phases forming in the samples.

  10. GeP and (Ge1−xSnx)(P1−yGey) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    International Nuclear Information System (INIS)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-01-01

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge 0.93(3) P 0.95(1) Sn 0.12(3) : a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder

  11. Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

    International Nuclear Information System (INIS)

    Zhang, R.; Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S.

    2016-01-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO 2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO x interfacial layer. It is found that the cubic phase is dominant in the HfO 2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO 2 film on a 1-nm-thick GeO x form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO 2 can be induced by the formation of six-fold crystalline GeO x structures in the underlying GeO x interfacial layer

  12. Thermal decomposition study of Mn doped Fe3O4 nanoparticles

    Science.gov (United States)

    Malek, Tasmira J.; Chaki, S. H.; Tailor, J. P.; Deshpande, M. P.

    2016-05-01

    Fe3O4 is an excellent magnetic material among iron oxides. It has a cubic inverse spinel structure exhibiting distinguished electric and magnetic properties. In this paper the authors report the synthesis of Mn doped Fe3O4 nanoparticles by wet chemical reduction technique at ambient temperature and its thermal characterization. Ferric chloride hexa-hydrate (FeCl3•6H2O), manganese chloride tetra-hydrate (MnCl2•4H2O) and sodium boro-hydrate (NaBH4) were used for synthesis of Fe3O4 nanoparticles at ambient temperature. The elemental composition of the as-synthesized Mn doped Fe3O4 nanoparticles were determined by energy dispersive analysis of X-rays (EDAX) technique. Thermogravimetric (TG) and differential thermal analysis (DTA) were carried out on the Mn doped Fe3O4 nanoparticles in the temperature range of ambient to 1124 K. The thermo-curves revealed that the particles decompose by four steps. The kinetic parameters were evaluated using non-mechanistic equations for the thermal decomposition.

  13. Effect of Al doping on phase formation and thermal stability of iron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Tayal, Akhil [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Mukul, E-mail: mgupta@csr.res.in [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Pandey, Nidhi [Amity Center for Spintronic Materials, Amity University, Sector 125, Noida 201 303 (India); Gupta, Ajay [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India); Horisberger, Michael [Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Stahn, Jochen [Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland)

    2015-11-25

    In the present work, we systematically studied the effect of Al doping on the phase formation of iron nitride (Fe–N) thin films. Fe–N thin films with different concentration of Al (Al = 0, 2, 3, 6, and 12 at.%) were deposited using dc magnetron sputtering by varying the nitrogen partial pressure between 0 and 100%. The structural and magnetic properties of the films were studied using x-ray diffraction and polarized neutron reflectivity. It was observed that at the lowest doping level (2 at.% of Al), nitrogen rich non-magnetic Fe–N phase gets formed at a lower nitrogen partial pressure as compared to the un-doped sample. Interestingly, we observed that as Al doping is increased beyond 3 at.%, nitrogen rich non-magnetic Fe–N phase appears at higher nitrogen partial pressure as compared to un-doped sample. The thermal stability of films were also investigated. Un-doped Fe–N films deposited at 10% nitrogen partial pressure possess poor thermal stability. Doping of Al at 2 at.% improves it marginally, whereas, for 3, 6 and 12 at.% Al doping, it shows significant improvement. The obtained results have been explained in terms of thermodynamics of Fe–N and Al–N. - Highlights: • Doping effects of Al on Fe–N phase formation is studied. • Phase formation shows a non-monotonic behavior with Al doping. • Low doping levels of Al enhance and high levels retard the nitridation process. • Al doping beyond 3 at.% improve thermal stability of Fe–N films.

  14. Method and closing pores in a thermally sprayed doped lanthanum chromite interconnection layer

    Science.gov (United States)

    Singh, Prabhakar; Ruka, Roswell J.

    1995-01-01

    A dense, substantially gas-tight electrically conductive interconnection layer is formed on an air electrode structure of an electrochemical cell by (A) providing an air electrode surface; (B) forming on a selected portion of the electrode surface, a layer of doped LaCrO.sub.3 particles doped with an element or elements selected from Ca, Sr, Ba, Mg, Co, Ni, Al and mixtures thereof by thermal spraying doped LaCrO.sub.3 particles, either by plasma arc spraying or flame spraying; (C) depositing a mixture of CaO and Cr.sub.2 O.sub.3 on the surface of the thermally sprayed layer; and (D) heating the doped LaCrO.sub.3 layer coated with CaO and Cr.sub.2 O.sub.3 surface deposit at from about 1000.degree. C. to 1200.degree. C. to substantially close the pores, at least at a surface, of the thermally sprayed doped LaCrO.sub.3 layer. The result is a dense, substantially gas-tight, highly doped, electrically conductive interconnection material bonded to the electrode surface. A solid electrolyte layer can be applied to the nonselected portion of the air electrode. A fuel electrode can be applied to the solid electrolyte, to form an electrochemical cell, for example for generation of electrical power.

  15. A novel red phosphor Mg2GeO4 doped with Eu3+ for PDP applications

    International Nuclear Information System (INIS)

    Yang Hongmei; Shi Jianxin; Liang Hongbin; Gong Menglian

    2006-01-01

    A novel red emitting phosphor, Eu 3+ -doped Mg 2 GeO 4 , was prepared by the solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the formation of Mg 2 GeO 4 :Eu 3+ . Field-emission-scanning electron microscopy (FE-SEM) observation indicated a narrow size-distribution of about 0.5-2 μm nm for the particles with spindle-like shape. Photoluminescence (PL) and vacuum ultraviolet (VUV) excitation characteristics of the phosphor Mg 2 GeO 4 :Eu 3+ were studied. We have also studied the effect of preparation conditions such as temperature, heating time on the PL data. Photoluminescence measurements indicated that the phosphor exhibits bright red emission at about 609 nm under UV excitation. And the vacuum ultraviolet spectra present that the novel red phosphor Mg 2 GeO 4 :Eu 3+ shows strong absorption in the VUV region, which ensures the efficient absorption of the Xe plasma emission lines. The phosphor Mg 2 GeO 4 :Eu 3+ shows the strongest emission at 613 nm corresponding to the electric dipole 5 D - 7 F 2 transition of Eu 3+ excited at 147 nm. The optical properties study suggests that it is a potential candidate for plasma display panels (PDPs) application

  16. A density functional theory investigation on amantadine drug interaction with pristine and B, Al, Si, Ga, Ge doped C60 fullerenes

    Science.gov (United States)

    Parlak, Cemal; Alver, Özgür

    2017-06-01

    Amantadine is a well-known drug for its treatment effect on Parkinson's disease and influenza infection or hepatitis. Heteroatom doped fullerenes have been extensively examined for their possible usage in sensor technology and medical applications as drug delivery vehicles. In this research, pristine and B, Al, Si, Ga, Ge doped C60 fullerenes and their interaction with amantadine drug molecule were investigated based on the density functional theory calculations. Findings suggest that doped C60 fullerenes might be used to detect the presence of amantadine and they might be used as drug delivery vehicles because of their moderately high adsorption energies with amantadine.

  17. Thermal property of holmium doped lithium lead borate glasses

    Science.gov (United States)

    Usharani, V. L.; Eraiah, B.

    2018-04-01

    The new glass system of holmium doped lithium lead borate glasses were prepared by conventional melt quenching technique. The thermal stability of the different compositions of Ho3+ ions doped lithium lead borate glasses were studied by using TG-DTA. The Tg values are ranging from 439 to 444 °C with respect to the holmium concentration. Physical parameters like polaron radius(rp), inter-nuclear distance (ri), field strength (F) and polarizability (αm) of oxide ions were calculated using appropriate formulae.

  18. 70Ge, 72Ge, 74Ge, 76Ge(d,3He)69Ga, 71Ga, 73Ga, 75Ga reactions at 26 MeV

    International Nuclear Information System (INIS)

    Rotbard, G.; La Rana, G.; Vergnes, M.; Berrier, G.; Kalifa, J.; Guilbaut, G.; Tamisier, R.

    1978-01-01

    The 70 Ge, 72 Ge, 74 Ge, 76 Ge(d, 3 He) 69 Ga, 71 Ga, 73 Ga, 75 Ga reactions have been studied at 26 MeV with 15 keV resolution (F.W.H.M), using the Orsay MP tandem accelerator and a split pole magnetic spectrometer. The spectroscopic factors are determined for 15 levels in 69 Ga and 11 levels in each of the 3 other Ga isotopes. Level schemes are proposed for the practically unknown 73 Ga and 75 Ga. Very simple model wave functions previously proposed for Ge nuclei are seen to reproduce quite well the measured occupation numbers for the proton orbitals. Anomalies in these occupation numbers are observed between Z=31 and 32 and between N=40 and 42, this last one corresponding to the structural transition observed recently in a comparison of the (p,t) and (t,p) reactions. These anomalies could be related to changes in the nuclear shape

  19. Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

    Science.gov (United States)

    Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

  20. Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

    Science.gov (United States)

    Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

    2016-05-01

    Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

  1. C and Si delta doping in Ge by CH{sub 3}SiH{sub 3} using reduced pressure chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Yuji, E-mail: yamamoto@ihp-microelectronics.com [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ueno, Naofumi; Sakuraba, Masao [Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1, Katahira, Aoba-Ku, Sendai 980-8577 (Japan); Murota, Junichi [Micro System Integration Center, Tohoku University, 519-1176, Aramaki aza Aoba, Aoba-ku, Sendai 980-0845 (Japan); Mai, Andreas [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Tillack, Bernd [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin (Germany)

    2016-03-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH{sub 3}SiH{sub 3} is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H{sub 2} or N{sub 2} carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N{sub 2} as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH{sub 3}SiH{sub 3} is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H{sub 2} as carrier gas, lower incorporated C is observed in comparison to Si. CH{sub 3}SiH{sub 3} injected with H{sub 2} carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N{sub 2} at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH{sub 3}SiH{sub 3} exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH{sub 3}SiH{sub 3} adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  2. Volume-change-free GeTeN films for high-performance phase-change memory

    International Nuclear Information System (INIS)

    Yin, You; Hosaka, Sumio; Zhang, Hui; Liu, Yang; Yu, Qi

    2013-01-01

    N-doping into GeTe is investigated with the aim of reducing the volume change upon crystallization, which usually induces a huge internal stress in phase-change memory devices. It is demonstrated that the thickness change upon crystallization of a N-doped GeTe (GeTeN) film is almost zero when N is doped in an appropriate amount. Cracks resulting from the stress caused by volume change disappear and the mean crystal size decreases by more than 50% upon N-doping into GeTe. It is thought that the volume-change-free behaviour is due to the formation of low-density nitride and grain refinement. (paper)

  3. Thermal expansion and magnetostriction of clathrate compound Pr3Pd20Ge6

    Science.gov (United States)

    Matsumoto, K.; Sekiguchi, Y.; Iwakami, O.; Ono, T.; Abe, S.; Ano, G.; Akatsu, M.; Mitsumoto, K.; Nemoto, Y.; Goto, T.; Takeda, N.; Kitazawa, H.

    2018-03-01

    In Pr3Pd20Ge6, the Pr ions are located at two different crystallographic sites, 4a and 8c site. Antiferro-quadrupole ordering (AFQ) of the 8c site occurs at 250 mK. Ac susceptibility measurement indicated that antiferromagnetic ordering (AFM) of the 4a site and Hyperfine-enhanced Pr nuclear magnetic ordering of the 8c site occur at 77 and 9 mK, respectively. To clarify the magnetic and quadrupole properties of Pr3Pd20Ge6, thermal expansion and magnetostriction measurements on single crystal sample were carried out along the [001] direction up to 8 T down to 500 μK using a capacitive dilatometer. In zero field, relative length change ΔL/L in [001] direction had a dip at AFQ and abrupt decrease at AFM ordering. From thermal expansion and isothermal magnetostriction measurements, magnetic phase diagram of Pr3Pd20Ge6 along [001] direction was obtained.

  4. Ge nanoclusters in PECVD-deposited glass caused only by heat treatment

    DEFF Research Database (Denmark)

    Ou, Haiyan; Rørdam, Troels Peter; Rottwitt, Karsten

    2008-01-01

    This paper reports the formation of Ge nanoclusters in a multi-layer structure consisting of alternating thin films of Ge-doped silica glass and SiGe, deposited by plasma-enhanced chemical vapor deposition (PECVD) and post annealed at 1100 °C in N2 atmosphere. We studied the annealed samples...... embedded with Ge nanoclusters after annealing. These nanoclusters are crystalline and varied in size. There were no clusters in the Ge-doped glass layer. Raman spectra verified the existence of crystalline Ge clusters. The positional shift of the Ge vibrational peak with the change of the focus depth...

  5. Tuning the Electrical and Thermal Conductivities of Thermoelectric Oxides through Impurity Doping

    Science.gov (United States)

    Torres Arango, Maria A.

    Waste heat and thermal gradients available at power plants can be harvested to power wireless networks and sensors by using thermoelectric (TE) generators that directly transform temperature differentials into electrical power. Oxide materials are promising for TE applications in harsh industrial environments for waste heat recovery at high temperatures in air, because they are lightweight, cheaply produced, highly efficient, and stable at high temperatures in air. Ca3Co4O9(CCO) with layered structure is a promising p-type thermoelectric oxide with extrapolated ZT value of 0.87 in single crystal form [1]. However the ZT values for the polycrystalline ceramics remain low of ˜0.1-0.3. In this research, nanostructure engineering approaches including doping and addition of nanoinclusions were applied to the polycrystalline CCO ceramic to improve the energy conversion efficiency. Polycrystalline CCO samples with various Bi doping levels were prepared through the sol-gel chemical route synthesis of powders, pressing and sintering of the pellets. Microstructure features of Bi doped ceramic bulk samples such as porosity, development of crystal texture, grain boundary dislocations and segregation of Bi dopants at various grain boundaries are investigated from microns to atomic scale. The results of the present study show that the Bi-doping is affecting both the electrical conductivity and thermal conductivity simultaneously, and the optimum Bi doping level is strongly correlated with the microstructure and the processing conditions of the ceramic samples. At the optimum doping level and processing conditions of the ceramic samples, the Bi substitution of Ca results in the increase of the electrical conductivity, decrease of the thermal conductivity, and improvement of the crystal texture. The atomic resolution Scanning Transmission Electron Microscopy (STEM) Z-contrast imaging and the chemistry analysis also reveal the Bi-segregation at grain boundaries of CCO

  6. Thermal expansion of the magnetorefrigerant Gd5(Si,Ge)4

    NARCIS (Netherlands)

    Brück, E.H.; Nazih, M.; de Visser, A.; Zhang, L.; Tegus, O.

    2003-01-01

    We report thermal expansion measurements carried out on a single-crystal of the giant magnetocaloric effect material Gd5(Si0.43Ge0.57)4. At the magneto-structural phase transition at T0~240 K, large steps in the relative length change ÄL/L along the principle crystallographic axes are observed. The

  7. Organic light emitting diodes with environmentally and thermally stable doped graphene electrodes

    DEFF Research Database (Denmark)

    Kuruvila, Arun; Kidambi, Piran R.; Kling, Jens

    2014-01-01

    We present a comparative study of the environmental and thermal stability of graphene charge transfer doping using molybdenum– trioxide (MoO3), vanadium–pentoxide (V2O5) and tungsten–trioxide (WO3). Our results show that all these metal oxides allow a strong and stable p-type doping of graphene...

  8. An investigation of the thermoluminescence of Ge-doped SiO{sub 2} optical fibres for application in interface radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Abdul Rahman, A.T., E-mail: a.t.abdulrahman@surrey.ac.uk [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, GU2 7XH Guildford (United Kingdom); School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia (UiTM), Campus of Negeri Sembilan, 72000 Kuala Pilah (Malaysia); Hugtenburg, R.P. [Department of Medical Physics and Clinical Engineering, Abertawe Bro Morgannwg UHB and School of Medicine, Swansea University, Swansea SA2 8PP (United Kingdom); Abdul Sani, Siti Fairus; Alalawi, A.I.M. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, GU2 7XH Guildford (United Kingdom); Issa, Fatma [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, GU2 7XH Guildford (United Kingdom); Department of Radiotherapy, Tripoli Medical Centre (TMC), Tripoli (Libya); Thomas, R. [Radiation Dosimetry Team, National Physical Laboratory, Teddington (United Kingdom); Barry, M.A. [Department of Medical Physics, The Royal Surrey County Hospital (RSCH) NHS Trust, Guildford, GU2 7XX Surrey (United Kingdom); Nisbet, A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, GU2 7XH Guildford (United Kingdom); Department of Medical Physics, The Royal Surrey County Hospital (RSCH) NHS Trust, Guildford, GU2 7XX Surrey (United Kingdom); Bradley, D.A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, GU2 7XH Guildford (United Kingdom); Department of Radiological Sciences, King Saud University, P.O. Box 10219, Riyadh 11432 (Saudi Arabia)

    2012-07-15

    We investigate the ability of high spatial resolution ({approx} 120 {mu}m) Ge-doped SiO{sub 2} TL dosimeters to measure photoelectron dose enhancement resulting from the use of a moderate to high-Z target (an iodinated contrast media) irradiated by 90 kVp X-rays. We imagine its application in a novel radiation synovectomy technique, modelled by a phantom containing a reservoir of I{sub 2} molecules at the interface of which the doped silica dosimeters are located. Measurements outside of the iodine photoelectron range are provided for using a stepped-design that allows insertion of the fibres within the phantom. Monte Carlo simulation (MCNPX) is used for verification. At the phantom medium I{sub 2}-interface additional photoelectron generation is observed, {approx}60% above that in the absence of the I{sub 2}, simulations providing agreement to within 3%. Percentage depth doses measured away from the iodine contrast medium reservoir are bounded by published PDDs at 80 kVp and 100 kVp. - Highlights: Black-Right-Pointing-Triangle Studies of dosimetric characteristic of commercially available doped silica optical fibres. Black-Right-Pointing-Triangle Investigation of the potential of the dosimeter in dose enhancement measurement. Black-Right-Pointing-Triangle Use of photoelectron dose enhancement as might be applied in radiation synovectomy. Black-Right-Pointing-Triangle Measurement of the percentage depth dose recorded by Ge-doped silica optical fibres. Black-Right-Pointing-Triangle The Monte Carlo simulation provides comparison against measured data.

  9. Characterization of Si sub 1 sub - sub x Ge sub x thin films prepared by sputtering

    CERN Document Server

    Noguchi, T

    2000-01-01

    By bombarding solid targets, we deposited Si sub 1 sub - sub x Ge sub x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B sup + -implanted Si sub 1 sub - sub x Ge sub x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si sub 1 sub - sub x Ge sub x films with a high Ge content (X approx 0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p sup + and n sup + polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage.

  10. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids.

    Science.gov (United States)

    Li, Bin; Jiang, Peng; Zhai, Famin; Chen, Junhong; Bei, Guo-Ping; Hou, Xinmei; Chou, Kuo-Chih

    2018-06-04

    In this paper, the fabrication and thermal conductivity of water-based nanofluids using boron (B) doped SiC as dispersions are reported. Doping B into β-SiC phase leads to the shrinkage of SiC lattice due to the substitution of Si atoms (radius: 0.134 nm) by smaller B atoms (radius: 0.095 nm). The presence of B in SiC phase also promotes crystallization and grain growth of obtained particles. The tailored crystal structure and morphology of B doped SiC nanoparticles are beneficial for the thermal conductivity improvement of the nanofluids by using them as dispersions. Serving B doped SiC nanoparticles as dispersions for nanofluids, a remarkable improvement of the stability was achieved in SiC-B6 nanofluid at pH 11 by means of the Zeta potential measurement. Dispersing B doped SiC nanoparticles in water based fluids, the thermal conductivity of the as prepared nanofluids containing only 0.3 vol. % SiC-B6 nanoparticles is remarkably raised up to 39.3 % at 30 °C compared to the base fluids and is further enhanced with the increased temperature. The main reasons for the improvement of thermal conductivity of SiC-B6 nanofluids are more stable dispersion and intensive charge ions vibration around the surface of nanoparticles as well as the enhanced thermal conductivity of the SiC-B dispersions. © 2018 IOP Publishing Ltd.

  11. Photon Irradiation Response on Ge and Al-Doped SiO2 Optical Fibres

    Science.gov (United States)

    Yaakob, Nor Haliza; Wagiran, Husin; Ramli, Ahmad Termizi; Ali, Hassan; Asni, Hazila

    2010-07-01

    Recently, research groups have reported a number of radiation effects on the applications of SiO2 optical fibres with possible use as dosimeter material because these optical fibre provide a good basis for medical radiation dosimetry. The objective of this study is to investigate the thermoluminescence response and fading characteristic for germanium and aluminium doped SiO2 optical fibres with photon irradiation. These optical fibres are placed in solid phantom and irradiated to 6 and 10 MV photon beam at dose ranging from 0.06 Gy to 0.24 Gy using Primus MLC 3339 linear accelerator at Hospital Sultan Ismail, Johor Bahru. In fading studies, the TL measurements were continued up to 14 days period. The optical fibres will produce glow curves whereby the information is then analyzed. Al and Ge-doped optical fibres have a linear dose-TL signal relationship that is proportionality between the TL signal and the doses. Comparison for TL response between different linear accelerator showed a good agreement because these optical fibres also have a linear dose-TL signal relationship even using different equipments.

  12. Dual-wavelength green laser with a 4.5 THz frequency difference based on self-frequency- doubling in Nd3+ -doped aperiodically poled lithium niobate.

    Science.gov (United States)

    Maestre, H; Torregrosa, A J; Fernández-Pousa, C R; Rico, M L; Capmany, J

    2008-05-01

    We report a dual-wavelength continuous-wave laser at 542.4 and 546.8 nm based on an Nd(3+)-doped aperiodically poled lithium niobate crystal. Two fundamental infrared (IR) wavelengths at 1084.8 and 1093.6 nm are simultaneously oscillated and self-frequency-doubled to green. The aperiodic domain distribution patterned in the crystal allows for quasi-phase matched self-frequency-doubling of both IR fundamentals while avoiding their sum-frequency mixing.

  13. Simultaneous thermal stability and phase change speed improvement of Sn15Sb85 thin film through erbium doping

    Science.gov (United States)

    Zou, Hua; Zhu, Xiaoqin; Hu, Yifeng; Sui, Yongxing; Sun, Yuemei; Zhang, Jianhao; Zheng, Long; Song, Zhitang

    2016-12-01

    In general, there is a trade off between the phase change speed and thermal stability in chalcogenide phase change materials, which leads to sacrifice the one in order to ensure the other. For improving the performance, doping is a widely applied technological process. Here, we fabricated Er doped Sn15Sb85 thin films by magnetron sputtering. Compared with the pure Sn15Sb85, we show that Er doped Sn15Sb85 thin films exhibit simultaneous improvement over the thermal stability and the phase change speed. Thus, our results suggest that Er doping provides the opportunity to solve the contradiction. The main reason for improvement of both thermal stability and crystallization speed is due to the existence of Er-Sb and Er-Sn bonds in Er doped Sn15Sb85 films. Hence, Er doped Sn15Sb85 thin films are promising candidates for the phase change memory application, and this method could be extended to other lanthanide-doped phase change materials.

  14. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  15. Dopant concentration and thermoluminescence (TL) properties of tailor-made Ge-doped SiO2 fibres

    International Nuclear Information System (INIS)

    Zahaimi, Nurul Arina; Ooi Abdullah, Mohd Haris Ridzuan; Zin, Hafiz; Abdul Rahman, Ahmad Lutfi; Hashim, Suhairul; Saripan, Mohd Iqbal; Paul, Mukul Chandra; Bradley, D.A.; Abdul Rahman, Ahmad Taufek

    2014-01-01

    Study focuses on characterisation of diverse concentrations of Ge-doped SiO 2 fibre as a potential thermoluminescence (TL) system for radiotherapy dosimetry. Irradiations were made using a linear accelerator providing 6 MV and 10 MV photon beams. Investigation has been done on various doped core diameter Ge-doped SiO 2 glass fibres such as commercial telecommunication fibres of 8 µm and 9 µm (CorActive High Tech, Canada), tailor-made fibres of 23 and 50 µm produced by the Central Glass and Ceramic Research Institute Kolkata, and tailor-made fibres of 11 µm produced by the University of Malaya Photonics Research Centre. The fibres have been characterised for TL sensitivity, reproducibility, dose- and energy-dependence. The area under the TL glow curve increases with increasing core diameter. For repeat irradiations at a fixed dose the dosimeter produces a flat response better than 4% (1SD) of the mean of the TL distribution. Minimal TL signal fading was found, less than 0.5% per day post irradiation. Linearity of TL has been observed with a correlation coefficient (r 2 ) of better than 0.980 (at 95% confidence level). For particular dopant concentrations, the least square fits show the change in TL yield, in counts per second per unit mass, obtained from 50 µm core diameter fibres irradiated at 6 MV of photon to be 8 times greater than that of 8 µm core diameter fibre. With respect to energy response, the TL yield at 10 MV decreases by∼5% compared to that at 6 MV, primarily due to the lower mass energy absorption coefficient at higher photon energy. These early results indicate that selectively screened fibres can be developed into a promising TL system, offering high spatial resolution capability and, with this, verification of complex radiotherapy dose distributions. - Highlights: • We examined the TL glow curve intensity for various diameter sizes of germanium doped silica glass fibre. • TL sensitivity increased with the increase of fibre core

  16. Comparison of silicon pin diode detector fabrication processes using ion implantation and thermal doping

    International Nuclear Information System (INIS)

    Zhou, C.Z.; Warburton, W.K.

    1996-01-01

    Two processes for the fabrication of silicon p-i-n diode radiation detectors are described and compared. Both processes are compatible with conventional integrated-circuit fabrication techniques and yield very low leakage currents. Devices made from the process using boron thermal doping have about a factor of 2 lower leakage current than those using boron ion implantation. However, the boron thermal doping process requires additional process steps to remove boron skins. (orig.)

  17. Noise Analysis of Second-Harmonic Generation in Undoped and MgO-Doped Periodically Poled Lithium Niobate

    Directory of Open Access Journals (Sweden)

    Yong Wang

    2008-01-01

    Full Text Available Noise characteristics of second-harmonic generation (SHG in periodically poled lithium niobate (PPLN using the quasiphase matching (QPM technique are analyzed experimentally. In the experiment, a0.78 μm second-harmonic (SH wave was generated when a 1.56 μm fundamental wave passed through a PPLN crystal (bulk or waveguide. The time-domain and frequency-domain noise characteristics of the fundamental and SH waves were analyzed. By using the pump-probe method, the noise characteristics of SHG were further analyzed when a visible light (532 nm and an infrared light (1090 nm copropagated with the fundamental light, respectively. The noise characterizations were also investigated at different temperatures. It is found that for the bulk and waveguide PPLN crystals, the SH wave has a higher relative noise level than the corresponding fundamental wave. For the same fundamental wave, the SH wave has lower noise in a bulk crystal than in a waveguide, and in MgO-doped PPLN than in undoped PPLN. The 532 nm irradiation can lead to higher noise in PPLN than the 1090 nm irradiation. In addition, increasing temperature of device can alleviate the problem of noise in conjunction with the photorefractive effect incurred by the irradiation light. This is more significant in undoped PPLN than in MgO-doped one.

  18. /sup 74/Ge: Transitions and levels excited in thermal-neutron capture

    International Nuclear Information System (INIS)

    Hofmeyr, C.; Franklyn, C.; Barreau, G.; Boerner, H.; Brissot, R.; Faust, H.; Schreckenbach, K.

    1985-01-01

    Gamma-ray transitions due to thermal-neutron capture in /sup 73/Ge were measured at ILL, Grenoble, using the curved-crystal spectrometers GAMS 1, 2 and 3, a pair spectrometer and a Ge(Li) spectrometer. Some 750 transitions were identified, of which 450 were placed in a level and decay scheme with the aid of an interactive program. Selected energy regions were scanned with the internal-conversion electron spectrometer BILL, yielding 18 transitions corresponding to δ-rays and sixteen unmatched candidates. The levels up to 4 MeV are presented together with the degree of corroboration obtained from published (p, t) and (t, p) results and β-decay data

  19. Plotter of pole figure using data from x-ray diffraction

    International Nuclear Information System (INIS)

    Lima, A.F.

    1990-01-01

    Any polycrystalline aggregate normally has a preferred crystallographic orientation, or texture which depends on its thermal and or mechanical history. Preferred orientation is best described by means of a pole figure. A pole figure is a stereographic projection which shows the variation in pole density with pole orientation, for a selected set of crystal planes. In this work, computer programs was developed to plot pole figures. The corrected intensities are calculated and directly transmitted to the plotter. The different intensities levels are represented by different colors in the pole figure. (author)

  20. Morphology and thermal stability of Ti-doped copper nitride films

    International Nuclear Information System (INIS)

    Fan Xiaoyan; Wu Zhiguo; Li Huajun; Geng Baisong; Li Chun; Yan Pengxun

    2007-01-01

    A weakly Ti-doped copper nitride (Cu 3 N) film was prepared by cylindrical magnetron sputtering. The XPS results indicate that Ti atoms do not substitute for the Cu atoms but probably locate at the grain boundaries. The columnar grains size is about half of that of the undoped Cu 3 N film and the surface is smoother. For weakly Ti-doped Cu 3 N films, a dense layer appears on top of the columnar crystals. The RMS of the Cu film formed by annealing of the weakly Ti-doped Cu 3 N film is more than twice larger than that of the film before annealing. Compared with the undoped Cu 3 N film, it possesses fine thermal stability both in vacuum and in atmosphere

  1. Effect of cobalt doping on thermal conductivity of YBa2Cu3O7-δ superconductor

    International Nuclear Information System (INIS)

    Suleiman, B.M.; Boerjesson, L.; Berastegui, P.

    1996-01-01

    The thermal conductivity of YBa 2 Cu 3 O 7-δ and YBa 2 Cu 3-x Co x O 7-δ (x=0.1) sintered compounds has been measured to investigate the effect of Co doping on the thermal conduction processes. The measurements were performed using the transient-plane-source technique. The thermal conductivity of the doped sample qualitatively resembles that of the corresponding undoped sample, but with values a factor of 2 lower. This decrease in thermal conductivity is attributed to scattering mechanisms due to enhancement of the microstructural imperfections and the decoupling between the conducting Cu-O planes as a result of Co-doping in the chain sites. An attempt was made to interpret the peak of the thermal conductivity below T c in terms of a theoretical model based on weakly damped collective electron excitations of the Bose type, with an acoustic dispersion relation (acoustic plasmons), inside the superconducting gap 2Δ(T). copyright 1996 The American Physical Society

  2. Low temperature formation of higher-k cubic phase HfO{sub 2} by atomic layer deposition on GeO{sub x}/Ge structures fabricated by in-situ thermal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, R., E-mail: zhang@mosfet.t.u-tokyo.ac.jp [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027 (China); Huang, P.-C.; Taoka, N.; Yokoyama, M.; Takenaka, M.; Takagi, S. [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-02-01

    We have demonstrated a low temperature formation (300 °C) of higher-k HfO{sub 2} using atomic layer deposition (ALD) on an in-situ thermal oxidation GeO{sub x} interfacial layer. It is found that the cubic phase is dominant in the HfO{sub 2} film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO{sub 2} film on a 1-nm-thick GeO{sub x} form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO{sub 2} can be induced by the formation of six-fold crystalline GeO{sub x} structures in the underlying GeO{sub x} interfacial layer.

  3. A precise determination of the top-quark pole mass

    International Nuclear Information System (INIS)

    Wang, Sheng-Quan; Wu, Xing-Gang; Si, Zong-Guo; Brodsky, Stanley J.

    2018-01-01

    The Principle of Maximum Conformality (PMC) provides a systematic way to eliminate the renormalization scheme and renormalization scale uncertainties for high-energy processes. We have observed that by applying PMC scale setting, one obtains comprehensive and self-consistent pQCD predictions for the top-quark pair total cross section and the top-quark pair forward-backward asymmetry in agreement with the measurements at the Tevatron and LHC. As a step forward, in the present paper, we determine the top-quark pole mass via a detailed comparison of the top-quark pair cross section with the measurements at the Tevatron and LHC. The results for the top-quark pole mass are m t = 174.6 +3.1 -3.2 GeV for the Tevatron with √(S) = 1.96 TeV, m t = 173.7 ± 1.5 and 174.2 ± 1.7 GeV for the LHC with √(S) = 7 and 8 TeV, respectively. Those predictions agree with the average, 173.34 ± 0.76 GeV, obtained from various collaborations via direct measurements. The consistency of the pQCD predictions using the PMC with all of the collider measurements at different energies provides an important verification of QCD. (orig.)

  4. A precise determination of the top-quark pole mass

    Science.gov (United States)

    Wang, Sheng-Quan; Wu, Xing-Gang; Si, Zong-Guo; Brodsky, Stanley J.

    2018-03-01

    The Principle of Maximum Conformality (PMC) provides a systematic way to eliminate the renormalization scheme and renormalization scale uncertainties for high-energy processes. We have observed that by applying PMC scale setting, one obtains comprehensive and self-consistent pQCD predictions for the top-quark pair total cross section and the top-quark pair forward-backward asymmetry in agreement with the measurements at the Tevatron and LHC. As a step forward, in the present paper, we determine the top-quark pole mass via a detailed comparison of the top-quark pair cross section with the measurements at the Tevatron and LHC. The results for the top-quark pole mass are m_t=174.6^{+3.1}_{-3.2} GeV for the Tevatron with √{S}=1.96 TeV, m_t=173.7± 1.5 and 174.2± 1.7 GeV for the LHC with √{S} = 7 and 8 TeV, respectively. Those predictions agree with the average, 173.34± 0.76 GeV, obtained from various collaborations via direct measurements. The consistency of the pQCD predictions using the PMC with all of the collider measurements at different energies provides an important verification of QCD.

  5. Gamma-ray irradiation resistance of silver doped GeS2–Ga2S3–AgI chalcohalide glasses

    International Nuclear Information System (INIS)

    Shen, W.; Baccaro, S.; Cemmi, A.; Ren, J.; Zhang, Z.; Zhou, Y.; Yang, Y.; Chen, G.

    2014-01-01

    Highlights: • The γ-ray irradiation resistance of Ag doped chalcohalide glasses (GeS 2 –Ga 2 S 3 –AgI) has been investigated. • The introduction of silver ions plays a specific role in the modification of the gamma-ray irradiation resistance of glasses. • The sulfur exerts an important effect on the photo-sensitivity of chalcogenide glasses. - Abstract: In the present work, series of silver doped Ge–Ga–S–AgI chalcohalide glasses have been prepared and their optical transmission spectra are compared before and after γ-ray irradiation at different doses. The differential transmission spectra of the irradiated samples with and without Ag doping have been compared to characterize the γ-ray irradiation induced red-shift of electronic absorption and formation of color centers. Ag doping plays an important role in increasing γ-ray irradiation resistance of the chalcohalide glasses due to its specific effect on the valence band and the network structure of glasses

  6. Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology

    Science.gov (United States)

    Faheem, M.; Zhang, Y.; Dai, X.

    2018-03-01

    The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.

  7. Ionizing Radiation Detectors Based on Ge-Doped Optical Fibers Inserted in Resonant Cavities

    Directory of Open Access Journals (Sweden)

    Saverio Avino

    2015-02-01

    Full Text Available The measurement of ionizing radiation (IR is a crucial issue in different areas of interest, from environmental safety and industrial monitoring to aerospace and medicine. Optical fiber sensors have recently proven good candidates as radiation dosimeters. Here we investigate the effect of IR on germanosilicate optical fibers. A piece of Ge-doped fiber enclosed between two fiber Bragg gratings (FBGs is irradiated with gamma radiation generated by a 6 MV medical linear accelerator. With respect to other FBG-based IR dosimeters, here the sensor is only the bare fiber without any special internal structure. A near infrared laser is frequency locked to the cavity modes for high resolution measurement of radiation induced effects on the fiber optical parameters. In particular, we observe a variation of the fiber thermo-optic response with the radiation dose delivered, as expected from the interaction with Ge defect centers, and demonstrate a detection limit of 360 mGy. This method can have an impact in those contexts where low radiation doses have to be measured both in small volumes or over large areas, such as radiation therapy and radiation protection, while bare optical fibers are cheap and disposable.

  8. Structural, optoelectronic, luminescence and thermal properties of Ga-doped zinc oxide thin films

    International Nuclear Information System (INIS)

    Shinde, S.S.; Shinde, P.S.; Oh, Y.W.; Haranath, D.; Bhosale, C.H.; Rajpure, K.Y.

    2012-01-01

    Highlights: ► The ecofriendly deposition of Ga-doped zinc oxide. ► Influence of Ga doping onto physicochemical properties in aqueous media. ► Electron–phonon coupling by Raman. ► Chemical bonding structure and valence band analysis by XPS. - Abstract: Ga-doped ZnO thin films are synthesized by chemical spray pyrolysis onto corning glass substrates in aqueous media. The influence of gallium doping on to the photoelectrochemical, structural, Raman, XPS, morphological, optical, electrical, photoluminescence and thermal properties have been investigated in order to achieve good quality films. X-ray diffraction study depicts the films are polycrystalline and fit well with hexagonal (wurtzite) crystal structure with strong orientations along the (0 0 2) and (1 0 1) planes. Presence of E 2 high mode in Raman spectra indicates that the gallium doping does not change the wurtzite structure. The coupling strength between electron and LO phonon has experimentally estimated. In order to understand the chemical bonding structure and electronic states of the Ga-doped ZnO thin films XPS analysis have been studied. SEM images shows the films are adherent, compact, densely packed with hexagonal flakes and spherical grains. Optical transmittance and reflectance measurements have been carried out. Room temperature PL spectra depict violet, blue and green emission in deposited films. The specific heat and thermal conductivity study shows the phonon conduction behavior is dominant in these polycrystalline films.

  9. Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide : effect of aluminum doping

    NARCIS (Netherlands)

    Groenen, R.; Kieft, E.R.; Linden, J.L.; Sanden, van de M.C.M.

    2006-01-01

    Aluminum-doped zinc oxide films exhibiting a rough surface morphol. are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in

  10. Structure and Stability of GeAun, n = 1-10 clusters: A Density Functional Study

    International Nuclear Information System (INIS)

    Priyanka,; Dharamvir, Keya; Sharma, Hitesh

    2011-01-01

    The structures of Germanium doped gold clusters GeAu n (n = 1-10) have been investigated using ab initio calculations based on density functional theory (DFT). We have obtained ground state geometries of GeAu n clusters and have it compared with Silicon doped gold clusters and pure gold clusters. The ground state geometries of the GeAu n clusters show patterns similar to silicon doped gold clusters except for n = 5, 6 and 9. The introduction of germanium atom increases the binding energy of gold clusters. The binding energy per atom of germanium doped cluster is smaller than the corresponding silicon doped gold cluster. The HUMO-LOMO gap for Au n Ge clusters have been found to vary between 0.46 eV-2.09 eV. The mullikan charge analysis indicates that charge of order of 0.1e always transfers from germanium atom to gold atom.

  11. Photoluminescence, reddish orange long persistent luminescence and photostimulated luminescence properties of praseodymium doped CdGeO3 phosphor

    International Nuclear Information System (INIS)

    Jin, Yahong; Hu, Yihua; Chen, Li; Fu, Yinrong; Mu, Zhongfei; Wang, Tao; Lin, Jun

    2014-01-01

    Highlights: • A novel phosphor CdGeO 3 :Pr 3+ was synthesized successfully. • The persistent luminescence properties of CdGeO 3 :Pr 3+ were studied. • The photostimulated luminescence properties of CdGeO 3 :Pr 3+ were investigated. • The persistent and photostimulated luminescence mechanisms were discussed in detail. - Abstract: Praseodymium doped CdGeO 3 phosphors were prepared successfully by a conventional high temperature solid-state reaction method. It showed reddish orange long persistent luminescence (LPL) after the short UV-irradiation. The reddish orange photostimulated luminescence (PSL) was also observed upon near infrared stimulation at 980 nm after per-exposure into UV light. The origin of LPL and PSL was identified with the emission from Pr 3+ ions with the aid of traps in host lattice. The optimal concentration of Pr 3+ ions for the brightest photoluminescence (PL) emission and the best LPL characteristic were experimentally to be about 3% and 0.5 mol%, respectively. The trapping and de-trapping processes of charge carriers between shallower and deep traps were illustrated. A model was proposed on the basis of experimental results to study the mechanisms of LPL and PSL

  12. Synthesis of GeSe2 Nanobelts Using Thermal Evaporation and Their Photoelectrical Properties

    Directory of Open Access Journals (Sweden)

    Lijie Zhang

    2014-01-01

    Full Text Available GeSe2 nanobelts were synthesized via a simple thermal-evaporation process by using gold particles as catalyst and GeSe2 flakes as starting materials. The morphology, crystal structure, and composition were characterized with scanning electron microscopy (SEM, high-resolution transmission electron microscopy (TEM, X-ray diffraction spectroscopy (XRD, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. SEM micrographs show that most of GeSe2 nanobelts have distinct segmented structures (wide belt, zigzag belt, and narrow belt. A possible mechanism was proposed for the growth of segmented nanobelts. It is possible that the growth of the segmented nanobelts is dominated by both vapor-liquid-solid and vapor-solid mechanisms. Devices made of single GeSe2 nanobelt have been fabricated and their photoelectrical property has been investigated. Results indicate that these nanobelt devices are potential building blocks for optoelectronic applications.

  13. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  14. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M.C.; Elliman, R.G.; Rao, M.R. [Australian National Univ., Canberra, ACT (Australia); Baribeau, J.M. [National Research Council of Canada, Ottawa, ON (Canada)

    1993-12-31

    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  15. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Ridgway, M C; Elliman, R G; Rao, M R [Australian National Univ., Canberra, ACT (Australia); Baribeau, J M [National Research Council of Canada, Ottawa, ON (Canada)

    1994-12-31

    Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.

  16. First-principles study of bandgap tuning in Ge1-xPbxSe

    Science.gov (United States)

    Lohani, Himanshu

    2018-03-01

    Narrow bandgap and its tuning are important aspects of materials for their technological applications. In this context group IV-VI semiconductors are one of the interesting candidates. In this paper, we explore the possibility of bandgap tuning in one of the family member of this family GeSe by using isoelectronic Pb doping. Our study is first-principles based electronic structure calculations of Ge1-xPbxSe. This study reveals that the Ge-p and Se-p states are strongly hybridized in GeSe and shows a gap in the DOS at Ef in GeSe. This gap reduces systematically with simultaneous enhancement of the states in the near Ef region as a function of Pb doping. This leads tuning of the indirect bandgap in GeSe via Pb doping. The results of the indirect bandgap decrement are consistent with the experimental findings. We propose a mechanism where the electrostatic effect of dopant Pb cation could be responsible for these changes in the electronic structure of GeSe.

  17. Thermal analyzes of phosphate glasses doped with Yb{sup 3+} and ZnTe nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Freitas, A.M.; Bell, M.J.V. [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Anjos, V., E-mail: virgilio@fisica.ufjf.br [Laboratório de Espectroscopia de Materiais, Departamento de Física, ICE, Universidade Federal de Juiz de Fora, 36036-330 Juiz de Fora, MG (Brazil); Pinheiro, A.S.; Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física da Universidade Federal de Uberlândia, CP 593, CEP 38400-902 Uberlândia, MG (Brazil)

    2016-01-15

    This work studies the thermal properties of a glass matrix called PZABP doped with ZnTe and co-doped with Yb{sup 3+} with nominal composition 60P{sub 2}O{sub 5}, 15ZnO, 5Al{sub 2}O{sub 3}, 10BaO, and 10 PbO (mol%). The presence of ZnTe results in the formation of nanocrystals which are evidenced by optical absorption, X-Ray Diffraction (XRD) and Raman scattering. Thermal lens and Volumetric Heat Capacity techniques were used to investigate thermal diffusivity (D), thermal conductivity (K) and optical path variation with temperature (ds/dT). The outcomes indicate high values for the thermal diffusivity and a relatively small thermal conductivity, i.e., around 2.6×10{sup −3} cm{sup 2}/s and 3.4×10{sup −3} W cm{sup −1} K{sup −1}, respectively. On the other hand, a low ds/dT value, 1.0×10{sup −6} K{sup −1}, was obtained as required for an active laser medium. Moreover, it has been observed that the matrix allows high concentration of dopants without compromising its thermal properties. As a result, PZABP glasses may be pointed out as a promising material to applications in high power photonics devices. - Highlights: • UV transparentglass matrix (PZABP) is used for Yb{sup 3+}doping. • Bulk like and quantum dots like crystals of ZnTe were grown. • Thermal properties point out PZABP as a material to high power photonics devices.

  18. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  19. Thermal Conductivity and Specific Heat Capacity of Dodecylbenzenesulfonic Acid-Doped Polyaniline Particles—Water Based Nanofluid

    Directory of Open Access Journals (Sweden)

    Tze Siong Chew

    2015-07-01

    Full Text Available Nanofluid has attracted great attention due to its superior thermal properties. In this study, chemical oxidative polymerization of aniline was carried out in the presence of dodecylbenzenesulfonic acid (DBSA as a dopant. Particles of DBSA-doped polyaniline (DBSA-doped PANI with the size range of 15 to 50 nm were obtained, as indicated by transmission electron microscope (TEM. Results of ultra violet-visible (UV-Vis absorption and Fourier transform infrared (FTIR spectroscopies as well as thermogravimetric analysis showed that PANI nanoparticles were doped with DBSA molecules. The doping level found was 36.8%, as calculated from elemental analysis data. Thermal conductivity of water was enhanced by 5.4% when dispersed with 1.0 wt% of DBSA-PANI nanoparticles. Specific heat capacity of water-based nanofluids decreased with increasing amount of DBSA-PANI nanoparticles.

  20. Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

    Science.gov (United States)

    Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

    2010-03-01

    It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

  1. Production and thermal stability of pure and Cr3+ -doped hydroxyapatite

    International Nuclear Information System (INIS)

    De Araujo, T S; De Souza, S O; De Sousa, E M B; Araujo, M S

    2010-01-01

    Hydroxyapatite (HAP) have been used as starting material for biomedical applications. The pure and Cr 3+ -doped hydroxyapatite were prepared by chemical precipitation reactions at 100, 500 e 800 0 C in order to investigate the thermal stability of these materials. The characterization of the thermal behavior of this phosphate, especially on the structural changes with heating, is very important for production of sunscreens The powders were characterized using chemical analysis: X-ray diffraction (XRD) and thermal analysis. The present study was successful in the preparation of pure hydroxyapatite and chromium substituted hydroxyapatites with good thermal stability and nanoparticles formation.

  2. Second harmonic generation from corona-poled polymer thin films ...

    Indian Academy of Sciences (India)

    2014-02-09

    Feb 9, 2014 ... We characterize thermal stability of second harmonic generation (SHG) properties of four different Y-type polymers poled using corona poling method. These polymers are based on donor–acceptor–donor-type repeating unit with different aromatic moieties acting as donors and dicyanomethylene acting as ...

  3. Thermal grafting of fluorinated molecular monolayers on doped amorphous silicon surfaces

    International Nuclear Information System (INIS)

    Sabbah, H.; Zebda, A.; Ababou-Girard, S.; Solal, F.; Godet, C.; Conde, J. P.; Chu, V.

    2009-01-01

    Thermally induced (160-300 deg. C) gas phase grafting of linear alkene molecules (perfluorodecene) was performed on hydrogenated amorphous silicon (a-Si:H) films, either nominally undoped or doped with different boron and phosphorus concentrations. Dense and smooth a-Si:H films were grown using plasma decomposition of silane. Quantitative analysis of in situ x-ray photoelectron spectroscopy indicates the grafting of a single layer of organic molecules. The hydrophobic properties of perfluorodecene-modified surfaces were studied as a function of surface coverage. Annealing experiments in ultrahigh vacuum show the covalent binding and the thermal stability of these immobilized layers up to 370 deg. C; this temperature corresponds to the Si-C bond cleavage temperature. In contrast with hydrogenated crystalline Si(111):H, no heavy wet chemistry surface preparation is required for thermal grafting of alkene molecules on a-Si:H films. A threshold grafting temperature is observed, with a strong dependence on the doping level which produces a large contrast in the molecular coverage for grafting performed at 230 deg. C

  4. Structural, thermal, and photoacoustic study of nanocrystalline Cr{sub 3}Ge produced by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S. [Departamento de Engenharia Mecânica, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Poffo, C. M. [Universidade Federal de Santa Catarina, Campus de Araranguá, 88900-000 Araranguá, Santa Catarina (Brazil); Borges, Z. V. [Departamento de Física, Universidade Federal do Amazonas, 3000 Japiim, 69077-000 Manaus, Amazonas (Brazil); Lima, J. C. de, E-mail: fsc1jcd@fisica.ufsc.br [Departamento de Física, Universidade Federal de Santa Catarina, Campus Universitário Trindade, S/N, C.P. 476, 88040-900 Florianópolis, Santa Catarina (Brazil); Biasi, R. S. de [Seção de Engenharia Mecânica e de Materiais, Instituto Militar de Engenharia, 22290-270 Rio de Janeiro (Brazil)

    2015-10-21

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr{sub 3}Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr{sub 11}Ge{sub 19} and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr{sub 3}Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr{sub 3}Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr{sub 3}Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  5. Electrical properties of phosphorene systems doped with fourth-period elements

    Science.gov (United States)

    Wang, Ke; Wang, Hai; Zhang, Min; Liu, Yan; Zhao, Wei

    2018-05-01

    In this work, we use a first-principles calculation to investigate the structure, binding energies, and electrical properties of monolayer phosphorene systems doped with fourth-period main group elements at a doping concentration of 6.25%. The calculation results reveal that, although large deformations exist, all doped systems are stable and non-spin polarized. In addition, the Ca, Se, and Br atoms are electron acceptors in the doped systems, whereas the Ga, Ge and As atoms are donors. Thus, there is an ionic bonding character between the dopants and neighboring phosphorus atoms in the Ca-, Ga-, Ge-, As-, Se-, and Br-doped systems. From band structures, we find that the K-, Ga-, As-, and Br-doped systems present semiconducting states with indirect gaps, whereas the Ca-, Ge-, and Se-doped systems have metallic states. We conclude that the metallicity of a phosphorene system doped with main-group elements depends on the number of valence electrons of the dopant. This investigation provides directions for manipulating the electrical properties of phosphorene by substitutional doping, which would broaden its possible applications in optoelectronics.

  6. Optical waveguide based on amorphous Er{sup 3+}-doped Ga-Ge-Sb-S(Se) pulsed laser deposited thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nazabal, V., E-mail: virginie.nazabal@univ-rennes1.f [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Nemec, P. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Jurdyc, A.M [Laboratoire de Physico-Chimie des Materiaux Luminescents (LPCML), UMR CNRS 5620, Universite Claude Bernard-Lyon 1, Villeurbanne (France); Zhang, S.; Charpentier, F. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France); Lhermite, H. [IETR-Microelectronique, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Charrier, J. [FOTON, UMR 6082-ENSSAT, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Guin, J.P. [LARMAUR, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Moreac, A. [Institut de Physique de Rennes, UMR CNRS 6251, Universite de Rennes 1, 35042 Rennes (France); Frumar, M. [Department of General and Inorganic Chemistry and Research Center, Faculty of Chemical Technology, University of Pardubice, Legions Sq. 565, 53210, Pardubice (Czech Republic); Adam, J.-L. [Sciences Chimiques de Rennes (SCR), UMR CNRS 6226, Equipe Verres et Ceramiques, Universite de Rennes 1, Rennes (France)

    2010-06-30

    Amorphous chalcogenide films play a motivating role in the development of integrated planar optical circuits due to their potential functionality in near infrared (IR) and mid-IR spectral regions. More specifically, the photoluminescence of rare earth ions in amorphous chalcogenide films can be used in laser and amplifier devices in the IR spectral domain. The aim of the present investigation was to optimize the deposition conditions for the fabrication of undoped and Er{sup 3+} doped sulphide and selenide thin films with nominal composition Ga{sub 5}Ge{sub 20}Sb{sub 10}S(Se){sub 65} or Ga{sub 5}Ge{sub 23}Sb{sub 5}S{sub 67} by pulsed laser deposition (PLD). The study of compositional, morphological and structural characteristics of the layers was realized by scanning electron microscopy-energy dispersive spectroscopy, atomic force microscopy and Raman spectroscopy analyses, respectively. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and optical losses were investigated as well. The clear identification of near-IR photoluminescence of Er{sup 3+} ions was obtained for both selenide and sulphide films. The decay of the {sup 4}I{sub 13/2} {yields} {sup 4}I{sub 15/2} transition at 1.54 {mu}m in Er{sup 3+} doped Ga{sub 5}Ge{sub 20}Sb{sub 10}S{sub 65} PLD sulphide films was studied to assess the effects of film thickness, rare earth concentration and multilayer PLD deposition on their spectroscopic properties.

  7. Evolution of microstructural defects of TiO2 nanocrystals by Zr4+ or/and Ge4+ doping lead to high disinfection efficiency for CWAs

    Science.gov (United States)

    Shen, Zhong; Zhong, Jin-Yi; Chai, Na-Na; He, Xin; Zang, Jian-Zheng; Xu, Hui; Han, Xiao-Yuan; Zhang, Peng

    2017-06-01

    Zr4+, Ge4+ doped and co-doped TiO2 nanoparticles were prepared by a 'one-pot' homogeneous precipitation method. The photocatalytic reaction kinetics of DMMP and the disinfection efficiency of HD, GD and VX on the samples were investigated. By means of a variety of characterization methods, especially the positron annihilation lifetime spectroscopy, the changes in structure and property of TiO2 across doping were studied. The results show that the reasonable engineering design of novel photocatalysts in the field of CWAs decontamination can be realized by adjusting the bulk-to-surface defects ratio, except for crystal structure, specific surface area, pore size distribution and light utilization.

  8. Correlation of infrared spectra and phase transitions in annealed proton-exchanged MgO doped LiNbO3

    International Nuclear Information System (INIS)

    Sun, Jian; Xu, Chang-qing

    2015-01-01

    Infrared spectra of OH − groups in annealed proton-exchanged (APE) 5 mol. % MgO-doped LiNbO 3 (MgO:LiNbO 3 ) crystals were studied using the Fourier transform infrared spectroscopy technique. Samples were prepared by benzoic acid proton-exchange followed with thermal annealing in oxygen. Evolutions of absorption peaks in APE MgO:LiNbO 3 crystals were recorded and analyzed. Comparing with none-doped APE LiNbO 3 crystals, a different phase transition behavior was found during thermal annealing. A periodically poled MgO:LiNbO 3 slab waveguide was prepared using identical procedures, and the second harmonic generation (SHG) signals were measured. Comparing the obtained SHG results with the infrared spectra, relationships between the phase transitions and the recovery of second-order nonlinear coefficients during thermal annealing were investigated. Finally, a method for optimizing the performance of MgO:LiNbO 3 waveguides was proposed

  9. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Energy Technology Data Exchange (ETDEWEB)

    Morrison, C., E-mail: c.morrison.2@warwick.ac.uk; Casteleiro, C.; Leadley, D. R.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-09-05

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm{sup 2}/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m{sub 0}. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  10. Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

    Science.gov (United States)

    Morrison, C.; Casteleiro, C.; Leadley, D. R.; Myronov, M.

    2016-09-01

    The complex quantum transport of a strained Ge quantum well (QW) modulation doped heterostructure with two types of mobile carriers has been observed. The two dimensional hole gas (2DHG) in the Ge QW exhibits an exceptionally high mobility of 780 000 cm2/Vs at temperatures below 10 K. Through analysis of Shubnikov de-Haas oscillations in the magnetoresistance of this 2DHG below 2 K, the hole effective mass is found to be 0.065 m0. Anomalous conductance peaks are observed at higher fields which deviate from standard Shubnikov de-Haas and quantum Hall effect behaviour due to conduction via multiple carrier types. Despite this complex behaviour, analysis using a transport model with two conductive channels explains this behaviour and allows key physical parameters such as the carrier effective mass, transport, and quantum lifetimes and conductivity of the electrically active layers to be extracted. This finding is important for electronic device applications, since inclusion of highly doped interlayers which are electrically active, for enhancement of, for example, room temperature carrier mobility, does not prevent analysis of quantum transport in a QW.

  11. Polymer poling characterization using second harmonic generation (SHG)

    Science.gov (United States)

    Tellier, Gildas; Averty, Dominique; Blart, Errol; Boisrobert, Christian; Gundel, Hartmut; Le Tacon, Sylvain; Monnereau, Cyrille; Odobel, Fabrice; Seveno, Raynald

    2006-04-01

    Several polymer molecules have structures which are suitable for the non-linear optic applications. We report on the design and fabrication of a high performance electro-optic modulator made of polymer thin films. The polymer we study contains a chromophore based on Disperse Red One covalently grafted to a host-matrix. The polymer materials are deposited in thin layers on a glass substrate by chemical solution deposition, either by spin-coating or by dip-coating. The thickness of the films is ranging from a hundred nanometers to several micrometers. Initially, the polymer molecules are randomly oriented and the films are isotropic, hence no electro-optic effect can be observed. In order to break the symmetry and align the chromophores, the films are submitted to the so-called corona poling process. As a result, their structure become non-centrosymmetric and the second-order susceptibility is no longer zero. The corona poling method consists of applying a high electric field to the polymer by means of a needle electrode, placed above the polymer film which is posed on a grounded sample support electrode. Thermal regulation of the support electrode allows to control the temperature during the poling of the films. Once the poling process has been established, a chemical cross-linking function is thermally activated in order to fix the orientation of the chromophores in the polymer matrix. The orientation and its stability in time is evaluated with a Second Harmonic Generation measurement set-up using the Makers Fringes configuration. We studied the influence of the poling temperature, the distance between the corona needle electrode and the sample, the high voltage applied, and the duration of the poling process on the efficiency of chromophore orientation in order to optimize the poling procedure. Finally, aging of poled polymer samples has been investigated at elevated temperatures, confirming the stability of the cross-linking process.

  12. Field induced modification of defect complexes in magnesium-doped lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Nadège; Granzow, Torsten [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Nataf, Guillaume F., E-mail: nataf@lippmann.lu [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); CEA, DSM/IRAMIS/SPEC, F-91191 Gif-sur-Yvette Cedex (France)

    2014-12-28

    Dielectric constant, thermally stimulated depolarization currents (TSDC), and conductivity of undoped and 5% Mg-doped LiNbO{sub 3} single crystals between −100 °C and 200 °C have been investigated. A Debye-like dielectric relaxation with an activation energy of 135 meV is observed in the Mg-doped material, but not in undoped crystals. On heating this relaxation disappears near 140 °C and does not reappear after cooling. Anomalies observed in TSDC around this temperature are attributed to the motion of lithium vacancies, in agreement with conductivity measurements. It is proposed that in thermal equilibrium the electrons from the Mg{sub Li}{sup •} donors are trapped in (4Mg{sub Li}{sup •}+4V{sub Li}{sup ′}) defect complexes. High-temperature poling breaks these defect complexes. The transition of the liberated electrons between the Mg{sub Li}{sup •} donor centers and the Nb{sub Nb} forming the conduction band gives rise to the observed dielectric relaxation.

  13. Crystal structure and thermal expansion of Mn(1-x)Fe(x)Ge.

    Science.gov (United States)

    Dyadkin, Vadim; Grigoriev, Sergey; Ovsyannikov, Sergey V; Bykova, Elena; Dubrovinsky, Leonid; Tsvyashchenko, Anatoly; Fomicheva, L N; Chernyshov, Dmitry

    2014-08-01

    A series of temperature-dependent single-crystal and powder diffraction experiments has been carried out using synchrotron radiation in order to characterize the monogermanides of Mn, Fe and their solid solutions. The MnGe single crystal is found to be enantiopure and we report the absolute structure determination. The thermal expansion, parametrized with the Debye model, is discussed from the temperature-dependent powder diffraction measurements for Mn(1-x)Fe(x)Ge (x = 0, 0.1, 0.2, 0.25, 0.3, 0.4, 0.5, 0.6, 0.7, 0.75, 0.8, 0.9). Whereas the unit-cell dimension and the Debye temperature follow a linear trend as a function of composition, the thermal expansion coefficient deviates from linear dependence with increasing Mn content. No structural phase transformations have been observed for any composition in the temperature range 80-500 K for both single-crystal and powder diffraction, indicating that the phase transition previously observed with neutron powder diffraction most probably has a magnetic origin.

  14. Thermal conductivity of nanocrystalline SiGe alloys using molecular dynamics simulations

    Science.gov (United States)

    Abs da Cruz, Carolina; Katcho, Nebil A.; Mingo, Natalio; Veiga, Roberto G. A.

    2013-10-01

    We have studied the effect of nanocrystalline microstructure on the thermal conductivity of SiGe alloys using molecular dynamics simulations. Nanograins are modeled using both the coincidence site lattice and the Voronoi tessellation methods, and the thermal conductivity is computed using the Green-Kubo formalism. We analyze the dependence of the thermal conductivity with temperature, grain size L, and misorientation angle. We find a power dependence of L1/4 of the thermal conductivity with the grain size, instead of the linear dependence shown by non-alloyed nanograined systems. This dependence can be derived analytically underlines the important role that disorder scattering plays even when the grains are of the order of a few nm. This is in contrast to non-alloyed systems, where phonon transport is governed mainly by the boundary scattering. The temperature dependence is weak, in agreement with experimental measurements. The effect of angle misorientation is also small, which stresses the main role played by the disorder scattering.

  15. Spectroscopic properties and energy transfer analysis of Tm3+-doped BaF2-Ga2O3-GeO2-La2O3 glass.

    Science.gov (United States)

    Yu, Shenglei; Yang, Zhongmin; Xu, Shanhui

    2010-05-01

    This paper reports on the spectroscopic properties and energy transfer analysis of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)-La(2)O(3) glasses with different Tm(2)O(3) doping concentrations (0.2, 0.5, 2.0, 2.5, 3.0, 3.5, 3.5, 4.0 wt%). Mid-IR fluorescence intensities in the range of 1,300 nm-2,200 nm have been measured when excited under an 808 nm LD for all the samples with the same pump power. Energy level structure and Judd-Ofelt parameters have been calculated based on the absorption spectra of Tm(3+), cross-relaxation rates and multi-phonon relaxation rates have been estimated with different Tm(2)O(3) doping concentrations. The maximum fluorescence intensity at around 1.8 mum has been obtained in Tm(2)O(3)-3 wt% sample and the maximum value of calculated stimulated emission cross-section of Tm(3+) in this sample is about 0.48 x 10(-20) cm(2) at 1,793 nm, and there is not any crystallization peak in the DSC curve of this sample, which indicate the potential utility of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)- La(2)O(3) glass for 2.0-microm optical fiber laser.

  16. Study of radioactive impurities in neutron transmutation doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Mathimalar, S.; Dokania, N.; Singh, V. [India-based Neutrino Observatory, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Homi Bhabha National Institute, Anushaktinagar, Mumbai 400 094 (India); Nanal, V., E-mail: nanal@tifr.res.in [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Pillay, R.G. [Department of Nuclear and Atomic Physics, Tata Institute of Fundamental Research, Mumbai 400 005 (India); Shrivastava, A. [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India); Jagadeesan, K.C.; Thakare, S.V. [Isotope Production and Applications Division, Bhabha Atomic Research Centre, Mumbai 400 085 (India)

    2015-02-21

    A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of {sup 65}Zn, {sup 110m}Ag and {sup 182}Ta impurities, which can be reduced by chemical etching of approximately ∼50μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of {sup 123}Sb in bulk Ge is estimated to be ∼1Bq/g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of ∼2 years would be necessary to reduce the radioactive background to ≤1mBq/g.

  17. Research Update: Strain and composition effects on ferromagnetism of Mn0.05Ge0.95 quantum dots

    Directory of Open Access Journals (Sweden)

    Liming Wang

    2016-04-01

    Full Text Available Mn0.05Ge0.95 quantum dots (QDs samples were grown by molecular beam epitaxy on Si substrates and 15-nm-thick fully strained Si0.8Ge0.2 virtual substrates, respectively. The QDs samples grown on the Si0.8Ge0.2 virtual substrates show a significant ferromagnetism with a Curie temperature of 227 K, while the QDs samples grown on the Si substrates are non-ferromagnetic. Microstructures of the QDs samples were characterized by high resolution transmission electron microscopy and synchrotron radiation X-ray diffraction. Interdependence between microstructure and ferromagnetism of Mn-doped Ge QDs was investigated. For the QDs sample grown on the strained Si0.8Ge0.2 virtual substrate, although the ferromagnetic phase Mn5Ge3 clusters were found to be formed in small dome-shaped dots, the significant ferromagnetism observed in that sample is attributed to ferromagnetic phase Mn-doped large dome-shaped Ge QDs, rather than to the ferromagnetic phase Mn5Ge3 clusters. The fully strained Si0.8Ge0.2 virtual substrates would result in a residual strain into the QDs and an increase in Ge composition in the QDs. Both consequences favor the formations of ferromagnetic phase Mn-doped Ge QDs from points of view of quantum confinement effect as well as Mn doping at substitutional sites.

  18. The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

    International Nuclear Information System (INIS)

    Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

    2017-01-01

    Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

  19. Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te₃.

    Science.gov (United States)

    Kim, Hyun-Sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-Il; Kim, Sung Wng

    2017-07-06

    Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi₂Te₃-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi 0.48 Sb 1.52 Te₃. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi 0.48-x Pb x Sb 1.52 Te₃ due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14-22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye-Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction.

  20. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10 8 photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H 2 atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs

  1. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  2. Room Temperature Direct Band Gap Emission from Ge p-i-n Heterojunction Photodiodes

    Directory of Open Access Journals (Sweden)

    E. Kasper

    2012-01-01

    Full Text Available Room temperature direct band gap emission is observed for Si-substrate-based Ge p-i-n heterojunction photodiode structures operated under forward bias. Comparisons of electroluminescence with photoluminescence spectra allow separating emission from intrinsic Ge (0.8 eV and highly doped Ge (0.73 eV. Electroluminescence stems from carrier injection into the intrinsic layer, whereas photoluminescence originates from the highly n-doped top layer because the exciting visible laser wavelength is strongly absorbed in Ge. High doping levels led to an apparent band gap narrowing from carrier-impurity interaction. The emission shifts to higher wavelengths with increasing current level which is explained by device heating. The heterostructure layer sequence and the light emitting device are similar to earlier presented photodetectors. This is an important aspect for monolithic integration of silicon microelectronics and silicon photonics.

  3. Enhanced Charge Extraction of Li-Doped TiO₂ for Efficient Thermal-Evaporated Sb₂S₃ Thin Film Solar Cells.

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-02-28

    We provided a new method to improve the efficiency of Sb₂S₃ thin film solar cells. The TiO₂ electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb₂S₃ solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO₂ films. Compared with the undoped TiO₂, Li-doped mesoporous TiO₂ dramatically improved the photo-voltaic performance of the thermal-evaporated Sb₂S₃ thin film solar cells, with the average power conversion efficiency ( PCE ) increasing from 1.79% to 4.03%, as well as the improved open-voltage ( V oc ), short-circuit current ( J sc ) and fill factors. The best device based on Li-doped TiO₂ achieved a power conversion efficiency up to 4.42% as well as a V oc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb₂S₃ solar cells. This study showed that Li-doping on TiO₂ can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb₂S₃-based solar cells.

  4. Theoretical insights into the minority carrier lifetime of doped Si—A computational study

    Science.gov (United States)

    Iyakutti, K.; Lavanya, R.; Rajeswarapalanichamy, R.; Mathan Kumar, E.; Kawazoe, Y.

    2018-04-01

    Using density functional theory, we have analyzed the ways and means of improving the minority carrier lifetime (MCL) by calculating the band structure dependent quantities contributing to the MCL. We have computationally modeled silicon doped with different elements like B, C, N, O, P, Ti, Fe, Ga, Ge, As, In, Sn, Sb, and Pt and looked at the effect of doping on MCL. In co-doping, the systems Si-B-Ga, Si-B-Ge, Si-B-2Ge, Si-B-Pt, Si-Ga-Ge, Si-Ga-2Ge, and Si-Ga-Pt are investigated. From our calculation, it is found that by doping and co-doping of Si with suitable elements having "s" and "p" electrons, there is a decrease in the recombination activity. The predicted effective minority carrier lifetime indicates the possibility of significant improvements. Based on the above studies, it is now maybe possible, with suitable choice of dopant and co-dopant material, to arrive at part of a standard production process for solar grade Si material.

  5. Effect of electrical and mechanical poling history on domain orientation and piezoelectric properties of soft and hard PZT ceramics

    International Nuclear Information System (INIS)

    Marsilius, Mie; Granzow, Torsten; Jones, Jacob L

    2011-01-01

    The superior piezoelectric properties of all polycrystalline ferroelectrics are based on the extent of non-180 0 domain wall motion under electrical and mechanical poling loads. To distinguish between 180 0 and non-180 0 domain wall motion in a soft-doped and a hard-doped lead zirconate titanate (PZT) ceramic, domain texture measurements were performed using x-ray and neutron diffraction after different loading procedures. Comparing the results to measurements of the remanent strain and piezoelectric coefficient allowed the differentiation between different microstructural contributions to the macroscopic parameters. Both types of ceramic showed similar behavior under electric field, but the hard-doped material was more susceptible to mechanical load. A considerable fraction of the piezoelectric coefficient originated from poling by the preferred orientation of 180 0 domains.

  6. Effect of electrical and mechanical poling history on domain orientation and piezoelectric properties of soft and hard PZT ceramics

    Science.gov (United States)

    Marsilius, Mie; Granzow, Torsten; Jones, Jacob L.

    2011-02-01

    The superior piezoelectric properties of all polycrystalline ferroelectrics are based on the extent of non-180° domain wall motion under electrical and mechanical poling loads. To distinguish between 180° and non-180° domain wall motion in a soft-doped and a hard-doped lead zirconate titanate (PZT) ceramic, domain texture measurements were performed using x-ray and neutron diffraction after different loading procedures. Comparing the results to measurements of the remanent strain and piezoelectric coefficient allowed the differentiation between different microstructural contributions to the macroscopic parameters. Both types of ceramic showed similar behavior under electric field, but the hard-doped material was more susceptible to mechanical load. A considerable fraction of the piezoelectric coefficient originated from poling by the preferred orientation of 180° domains.

  7. Processing line for industrial radiation-thermal synthesis of doped lithium ferrite powders

    Science.gov (United States)

    Surzhikov, A. P.; Galtseva, O. V.; Vasendina, E. A.; Vlasov, V. A.; Nikolaev, E. V.

    2016-02-01

    The paper considers the issues of industrial production of doped lithium ferrite powders by radiation-thermal method. A technological scheme of the processing line is suggested. The radiation-thermal technological scheme enables production of powders with technical characteristics close to the required ones under relatively low temperature annealing conditions without intermediate mixing. The optimal conditions of the radiation-thermal synthesis are achieved isothermally under irradiation by the electron beam with energy of 2.5 MeV in the temperature range of 700-750 0C within- 120 min.

  8. High-power, continuous-wave, single-frequency, all-periodically-poled, near-infrared source.

    Science.gov (United States)

    Devi, Kavita; Chaitanya Kumar, S; Ebrahim-Zadeh, M

    2012-12-15

    We report a high-power, single-frequency, continuous-wave (cw) source tunable across 775-807 nm in the near-infrared, based on internal second harmonic generation (SHG) of a cw singly-resonant optical parametric oscillator (OPO) pumped by a Yb-fiber laser. The compact, all-periodically-poled source employs a 48-mm-long, multigrating MgO doped periodically poled lithium niobate (MgO:PPLN) crystal for the OPO and a 30-mm-long, fan-out grating MgO-doped stoichiometric periodically poled lithium tantalate (MgO:sPPLT) crystal for intracavity SHG, providing as much as 3.7 W of near-infrared power at 793 nm, together with 4 W of idler power at 3232 nm, at an overall extraction efficiency of 28%. Further, the cw OPO is tunable across 3125-3396 nm in the idler, providing as much as 4.3 W at 3133 nm with >3.8  W over 77% of the tuning range together with >3  W of near-infrared power across 56% of SHG tuning range, in high-spatial beam-quality with M2<1.4. The SHG output has an instantaneous linewidth of 8.5 MHz and exhibits a passive power stability better than 3.5% rms over more than 1 min.

  9. Structural, optical and photo thermal properties of Er3+:Y2O3 doped PMMA nanocomposite

    Science.gov (United States)

    Tabanli, Sevcan; Eryurek, Gonul

    2018-02-01

    Thermal decomposition technique was employed to synthesize of phosphors of yttria (Y2O3) doped with erbium (Er3+) ions. After the synthesized procedure, the nano-sized crystalline powders were annealed at 800oC for 24 h. Annealed powders were embedded in poly(methyl methacrylate) (PMMA) by free radical polymerization to fabricate nanocomposite polymer materials. The crystalline structure of the powder and doped PMMA nanocomposite samples were determined using X-ray diffraction technique. Scherrer's equation and the FW1/5/4/5M method were used to determine average crystalline size and grain size distributions, respectively. The spectroscopic properties of the powders and doped PMMA nanocomposites were studied by measuring the upconversion emission spectra under near-infrared laser excitation at room temperature. The laser-induced photo thermal behaviors of Er3+:Y2O3 nano-powders and doped PMMA nanocomposite were investigated using the fluorescence intensity ratio (FIR) technique.

  10. Top-quark mass and top-quark pole mass measurements with the ATLAS detector

    CERN Document Server

    Barillari, Teresa; The ATLAS collaboration

    2017-01-01

    Results of top-quark mass measurements in the di-lepton and in the all-jets top-antitop decay channels with the ATLAS detector are presented. The measurements are obtained using proton--proton collisions at a centre-of-mass energy \\sqrt{s} = 8 TeV at the CERN Large Hadron Collider. The data set used corresponds to an integrated luminosity of 20.2 fb-1. The top-quark mass in the di-lepton channel is measured to be 172.99 +/-0.41 (stat.) +/- 0.74 (syst.) GeV. In the all-jets analysis the top-quark mass is measured to be 173.72 +/- 0.55 (stat.)+/- 1.01 (syst.) GeV. In addition, the top-quark pole mass is determined from inclusive cross-section measurements in the top-antitop di-lepton decay channel with the ATLAS detector. The measurements are obtained using data at \\sqrt{s} = 7 TeV and \\sqrt{s} =8 TeV corresponding to an integrated luminosity of 4.6 fb-1 and 20.2 fb-1 respectively. The top-quark pole mass is measured to be 172.9^{+2.5}_{-2.6} GeV.

  11. Optimal process parameters for phosphorus spin-on-doping of germanium

    Energy Technology Data Exchange (ETDEWEB)

    Boldrini, Virginia [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Carturan, Sara Maria, E-mail: sara.carturan@lnl.infn.it [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Maggioni, Gianluigi; Napolitani, Enrico [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Napoli, Daniel Ricardo [INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy); Camattari, Riccardo [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara, Via Saragat 1, 44122, Ferrara (Italy); De Salvador, Davide [Dipartimento di Fisica e Astronomia, Università degli Studi di Padova, Via Marzolo 8, I-35131 Padova (Italy); INFN-LNL, Viale dell’Università 2, I-35020 Legnaro, Padova (Italy)

    2017-01-15

    Highlights: • Optimized protocol for the application of phosphorus spin-on-doping to Ge surface. • Homogeneous n-type Ge layers, fully electrically active, are obtained. • Crucial parameters for SOD curing are relative humidity, time and temperature. • Characterization of Ge loss from the surface into the SOD film by diffusion. • Spike annealing in standard tube chamber furnace are performed. - Abstract: The fabrication of homogeneously doped germanium layers characterized by total electrical activation is currently a hot topic in many fields, such as microelectronics, photovoltaics, optics and radiation detectors. Phosphorus spin-on-doping technique has been implemented on Ge wafers, by developing a protocol for the curing process and subsequent diffusion annealing for optimal doping. Parameters such as relative humidity and curing time turned out to affect the surface morphology, the degree of reticulation reached by the dopant source and the amount of dopant available for diffusion. After spike annealing in a conventional furnace, diffusion profiles and electrical properties have been measured. Ge loss from the surface during high-temperature annealing, due to diffusion into the source film, has been observed and quantified.

  12. Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

    Energy Technology Data Exchange (ETDEWEB)

    Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R. [International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Taramani, Chennai-600113 (India); Pradipkanti, L.; Satapathy, Dillip K. [Department of Physics, Indian Institute of Technology Madras, Chennai-600036 (India)

    2016-07-15

    We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773 K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.

  13. The Role of Ge Wetting Layer and Ge Islands in Si MSM Photodetectors

    International Nuclear Information System (INIS)

    Mahmodi, H.; Hashim, M. R.

    2010-01-01

    In this work, Ge thin films were deposited on silicon substrates by radio frequency magnetron sputtering to form Ge islands from Ge layer on Si substrate during post-growth rapid thermal annealing (RTA). The size of the islands decreases from 0.6 to 0.1 as the rapid thermal annealing time increases from 30 s to 60 s at 900 deg. C. Not only that the annealing produces Ge islands but also wetting layer. Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscopy (SEM) were employed for structural analysis of Ge islands. Metal-Semiconductor-Metal photodetectors (MSM PDs) were fabricated on Ge islands (and wetting layer)/Si. The Ge islands and wetting layer between the contacts of the fabricated devices are etched in order to see their effects on the device. The performance of the Ge islands MSM-PD was evaluated by dark and photo current-voltage (I-V) measurements at room temperature (RT). It was found that the device with island and wetting layer significantly enhance the current gain (ratio of photo current to dark current) of the device.

  14. A high-sensitivity fiber-optic evanescent wave sensor with a three-layer structure composed of Canada balsam doped with GeO2.

    Science.gov (United States)

    Zhong, Nianbing; Zhao, Mingfu; Zhong, Lianchao; Liao, Qiang; Zhu, Xun; Luo, Binbin; Li, Yishan

    2016-11-15

    In this paper, we present a high-sensitivity polymer fiber-optic evanescent wave (FOEW) sensor with a three-layer structure that includes bottom, inter-, and surface layers in the sensing region. The bottom layer and inter-layer are POFs composed of standard cladding and the core of the plastic optical fiber, and the surface layer is made of dilute Canada balsam in xylene doped with GeO2. We examine the morphology of the doped GeO2, the refractive index and composition of the surface layer and the surface luminous properties of the sensing region. We investigate the effects of the content and morphology of the GeO2 particles on the sensitivity of the FOEW sensors by using glucose solutions. In addition, we examine the response of sensors incubated with staphylococcal protein A plus mouse IgG isotype to goat anti-mouse IgG solutions. Results indicate very good sensitivity of the three-layer FOEW sensor, which showed a 3.91-fold improvement in the detection of the target antibody relative to a conventional sensor with a core-cladding structure, and the novel sensor showed a lower limit of detection of 0.2ng/l and a response time around 320s. The application of this high-sensitivity FOEW sensor can be extended to biodefense, disease diagnosis, biomedical and biochemical analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

  15. Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

    International Nuclear Information System (INIS)

    Bayani, Amir Hossein; Vali, Mehran; Dideban, Daryoosh; Moezi, Negin

    2016-01-01

    In this paper, a scheme of the germanene nanoribbon tunneling field effect transistor (GeNR-TFET) is proposed. The characteristics and analog performance of the device were theoretically investigated by exploiting the electrical properties of a germanene nanoribbon and applying the doping concentration in the source and drain regions at 300 K and 4 K temperatures. The device parameters were obtained using a non-equilibrium Green’s function (NEGF) method within the tight binding (TB) Hamiltonian. The TB Hamiltonian was extracted from the density functional theory (DFT) through the Wannier function. We find that by increasing the doping concentration the I on current increases which leads to an improvement of the I on /I off ratio to 10 5 . Moreover, decreasing the temperature from 300 K to 4 K causes the I off to become ten times smaller. We find that the device output characteristic displays a negative differential conductance with a good peak-to-valley ratio which is improved by increasing the doping concentration. The analog performance of the device is also investigated in the subthreshold regime of operation by varying the doping concentration. It is observed that by increasing the device doping concentration, the analog figures of merit can be improved. (paper)

  16. Improvement of thermal shock resistance of isotropic graphite by ti-doping

    International Nuclear Information System (INIS)

    Lopez-Galilea, I.; Ordas, N.; Garcia-Rosales, C.; Lindig, S.

    2007-01-01

    Full text of publication follows: Carbon fiber reinforced carbon (CFC) is the present candidate material for the strike point area of the ITER divertor due to its ability to withstand excessive heat loads during ELMs and plasma disruptions. However, chemical erosion of carbon under hydrogen bombardment from the plasma involves serious disadvantages for this application (replacement and safety problems due to tritium co-deposition). In addition, the manufacturing process of present CFC candidate materials is long and complex resulting in high costs, and CFC materials are inherently anisotropic. Doping of carbon with small amounts (several at. %) of titanium has proved to be effective in reducing chemical erosion while maintaining or even improving the mechanical properties. furthermore, TiC as dopant contributes to increase significantly the thermal conductivity and consequently the thermal shock resistance, due to the catalytic effect of this carbide on the graphitization. The aim of this work is to improve substantially the thermal shock resistance of fine-grained isotropic graphite by doping it with small amounts of TiC, reducing at the same time the chemical erosion. By this way Ti-doped graphites could be competitive with present CFC candidate materials for next step fusion devices. To achieve this, a synthetic naphthalene-derived mesophase pitch named AR is used as carbon precursor; this raw material exhibits excellent graphitizability, high chemical purity and consistent quality. Due to the low viscosity at the softening point of AR, resulting in swelling during the carbonization treatment, it is necessary to modify the initial viscosity of AR by an adequate oxidative stabilization treatment. As dopant, TiC powder with 130 nm average particle size is added. The influence of several manufacturing parameters such as oxidative stabilization treatment, carbonization cycle, graphitization temperature and dwell time during graphitization have been investigated in

  17. Improvement of thermal shock resistance of isotropic graphite by ti-doping

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Galilea, I.; Ordas, N.; Garcia-Rosales, C. [Navarrra Univ., CEPT, San Sebastian (Spain); Lindig, S. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Garching (Germany)

    2007-07-01

    Full text of publication follows: Carbon fiber reinforced carbon (CFC) is the present candidate material for the strike point area of the ITER divertor due to its ability to withstand excessive heat loads during ELMs and plasma disruptions. However, chemical erosion of carbon under hydrogen bombardment from the plasma involves serious disadvantages for this application (replacement and safety problems due to tritium co-deposition). In addition, the manufacturing process of present CFC candidate materials is long and complex resulting in high costs, and CFC materials are inherently anisotropic. Doping of carbon with small amounts (several at. %) of titanium has proved to be effective in reducing chemical erosion while maintaining or even improving the mechanical properties. furthermore, TiC as dopant contributes to increase significantly the thermal conductivity and consequently the thermal shock resistance, due to the catalytic effect of this carbide on the graphitization. The aim of this work is to improve substantially the thermal shock resistance of fine-grained isotropic graphite by doping it with small amounts of TiC, reducing at the same time the chemical erosion. By this way Ti-doped graphites could be competitive with present CFC candidate materials for next step fusion devices. To achieve this, a synthetic naphthalene-derived mesophase pitch named AR is used as carbon precursor; this raw material exhibits excellent graphitizability, high chemical purity and consistent quality. Due to the low viscosity at the softening point of AR, resulting in swelling during the carbonization treatment, it is necessary to modify the initial viscosity of AR by an adequate oxidative stabilization treatment. As dopant, TiC powder with 130 nm average particle size is added. The influence of several manufacturing parameters such as oxidative stabilization treatment, carbonization cycle, graphitization temperature and dwell time during graphitization have been investigated in

  18. Optical properties and thermal stability of germanium oxide (GeO2) nanocrystals with α-quartz structure

    International Nuclear Information System (INIS)

    Ramana, C.V.; Carbajal-Franco, G.; Vemuri, R.S.; Troitskaia, I.B.; Gromilov, S.A.; Atuchin, V.V.

    2010-01-01

    Germanium dioxide (GeO 2 ) crystals were prepared by a chemical precipitation method at a relatively low-temperature (100 o C). The grown crystals were characterized by studying their microstructure, optical properties and thermal stability. The results indicate that the grown GeO 2 crystals exhibit α-quartz type crystal structure. The lattice parameters obtained from XRD were a = 4.987(4) A and c = 5.652(5) A. Electron microscopy analysis indicates a high structural quality of GeO 2 crystals grown using the present approach. Optical absorption measurements indicate a direct bandgap of 5.72 eV without any additional bands arising from localized or defect states. Thermogravimetric measurements indicate the temperature stability of the grown GeO 2 nanocrystals. Microscopic analysis coupled with energy dispersive X-ray spectroscopy of the GeO 2 crystals with α-quartz type crystal structure indicates their stability in chemical composition up to a temperature of 400 deg. C. The surface morphology of GeO 2 crystals, however, found to be changing with the increase in temperature.

  19. Mobility and Device Applications of Heavily Doped Silicon and Strained SILICON(1-X) Germanium(x) Layers

    Science.gov (United States)

    Carns, Timothy Keith

    With the advent of Si molecular beam epitaxy (Si -MBE), a significant amount of research has occurred to seek alternative high conductivity Si-based materials such as rm Si_{1-x}Ge_ {x} and delta-doped Si. These materials have brought improvements in device speeds and current drives with the added advantage of monolithic integration into Si VLSI circuits. The bulk of research in Si-based materials has been devoted to the implementation of strained rm Si_{1-x}Ge_{x} as the base layer of a rm Si_ {1-x}Ge_{x}/Si heterojunction bipolar transistor (HBT). Because of the valence band offset, the rm Si_{1-x}Ge _{x} layer can be heavily doped, leading to lower base sheet resistances and hence, improved speed performances. The Ge content in the base can also be graded to increase the drift field in the base. However, very few hole mobility measurements have been done in these strained layers, leading to limitations in device modeling and in understanding the transport behavior in this important material. In addition to rm Si_{1 -x}Ge_{x}, much potential also exists in using delta-doping in Si for improved conductivities over those of bulk Si. However, as of yet, delta-doped Si has received little attention. Therefore, this dissertation is dedicated to the investigation of both of these Si-based materials (strained rm Si_{1-x}Ge_{x } and delta-doped Si and rm Si_{1-x}Ge_ {x}) for the purpose of obtaining higher conductivities than comparably doped bulk Si. This work is divided into three parts to accomplish this objective. The first part is contained in Chapter 3 and is comprised of a comprehensive characterization of the hole mobility in compressively strained rm Si_{1 -x}Ge_{x}. Few results have been obtained prior to this research which has led to many inaccuracies in device modeling. The second part of this dissertation in Chapters 4 and 5 is devoted to the study of the mobility behavior in both boron and antimony delta-doped Si and rm Si_ {1-x}Ge_{x}. The important

  20. In Situ Poling and Imidization of Amorphous Piezoelectric Polyimides

    Science.gov (United States)

    Park, Cheol; Ounaies, Zoubeida; Wise, Kristopher E.; Harrison, Joycelyn S.; Bushnell, Dennis M. (Technical Monitor)

    2002-01-01

    An amorphous piezoelectric polyimide containing polar functional groups has been developed using a combination of experimental and molecular modeling for potential use in high temperature applications. This amorphous polyimide, (Beta-CN)APB/ODPA, has exhibited good thermal stability and piezoelectric response at temperatures up to 150C. Density functional calculations predicted that a partially cured amic acid (open imide ring) possesses a dipole moment four times larger than the fully imidized closed ring. In situ poling and imidization of the partially cured (Beta-CN)APB/ODPA, was studied in an attempt to maximize the degree of dipolar orientation and the resultant piezoelectric response. A positive corona poling was used to minimize localized arcing during poling and to allow use of higher poling fields without dielectric breakdown. The dielectric relaxation strength, remanent polarization, and piezoelectric response were evaluated as a function of the poling profile. The partially cured, corona poled polymers exhibited higher dielectric relaxation strength (delta varepsilon), remanent polarization (Pr) and piezoelectric strain coefficient (d33) than the fully cured, conventionally poled ones.

  1. Comparative study of thermal lensing in low-doped Nd:YVO4 and Nd:GdVO4 of equal doping concentration

    CSIR Research Space (South Africa)

    Strauss

    2009-06-01

    Full Text Available stream_source_info Strauss_2009.pdf.txt stream_content_type text/plain stream_size 4705 Content-Encoding UTF-8 stream_name Strauss_2009.pdf.txt Content-Type text/plain; charset=UTF-8 Comparative Study of Thermal Lensing... in Low-doped Nd:YVO4 and Nd:GdVO4 of Equal Doping Concentration H. J. Strauss1,2, C. Bollig1, H. M. von Bergmann2 and M. J. D. Esser1 1. National Laser Centre, Council for Scientific and Industrial Research, PO Box 395, Pretoria 0001, South Africa 2...

  2. A first-principles study of group IV and VI atoms doped blue phosphorene

    Science.gov (United States)

    Bai, Ruimin; Chen, Zheng; Gou, Manman; Zhang, Yixin

    2018-02-01

    Using first-principles calculations, we have systematically investigated the structural, electronic and magnetic properties of blue phosphorene doped by group IV and VI atoms, including C, Si, Ge, Sn, O, S, Se and Te. All the doped systems are energetically stable. Only C, Si, Ge and O-substituted systems show the characteristics of spin polarization and the magnetic moments are all 1.0 μB. Moreover, we found that C, Si, Ge and O doped systems are indirect bandgap semiconductors, while Sn, S, Se and Te doped systems present metallic property. These results show that blue phosphorene can be used prospectively in optoelectronic and spintronic devices.

  3. Scattering of thermal photons by a 46 GeV positron beam at LEP

    International Nuclear Information System (INIS)

    Bini, C.; De Zorzi, G.; Diambrini-Palazzi, G.; Di Cosimo, G.; Di Domenico, A.; Gauzzi, P.; Zanello, D.

    1991-01-01

    The scattering of thermal photons present in the vacuum pipe of LEP against the high energy positron beam has been detected. The spectrum of the back-scattered photons is presented for a positron beam energy of 46.1 GeV. Measurements have been performed in the interaction region 1 with the LEP-5 experiment calorimeter. (orig.)

  4. Thermo-optical properties of Nd{sup 3+} doped phosphate glass determined by thermal lens and lifetime measurements

    Energy Technology Data Exchange (ETDEWEB)

    Martins, V.M. [Instituto de Física, Universidade Federal de Uberlândia, CEP38408-902 Uberlandia, Minas Gerais (Brazil); CIMAP – Centre de recherche sur les Ions, les Matériaux et la Photonique UMR 6252 CEA-CNRS-ENSICAEN-Université de Caen, 14050 Caen Cedex 4 (France); Messias, D.N., E-mail: dnmessias@infis.ufu.br [Instituto de Física, Universidade Federal de Uberlândia, CEP38408-902 Uberlandia, Minas Gerais (Brazil); Doualan, J.L.; Braud, A.; Camy, P. [CIMAP – Centre de recherche sur les Ions, les Matériaux et la Photonique UMR 6252 CEA-CNRS-ENSICAEN-Université de Caen, 14050 Caen Cedex 4 (France); Dantas, N.O. [Instituto de Física, Universidade Federal de Uberlândia, CEP38408-902 Uberlandia, Minas Gerais (Brazil); CIMAP – Centre de recherche sur les Ions, les Matériaux et la Photonique UMR 6252 CEA-CNRS-ENSICAEN-Université de Caen, 14050 Caen Cedex 4 (France); Instituto de Física de São Carlos, Universidade de São Paulo, USP, CEP 13560-970 São Carlos, SP (Brazil); Catunda, T. [Instituto de Física de São Carlos, Universidade de São Paulo, USP, CEP 13560-970 São Carlos, SP (Brazil); Pilla, V.; Andrade, A.A. [Instituto de Física, Universidade Federal de Uberlândia, CEP38408-902 Uberlandia, Minas Gerais (Brazil); and others

    2015-06-15

    In this paper the Normalized Lifetime Thermal Lens technique was applied to a set of Nd-doped phosphate samples in order to obtain its thermal and optical properties. Moreover, radiative emission properties were obtained by the Judd–Ofelt theory. The luminescence quantum efficiency obtained by both methods agreed very well, indicating that this thermal lens approach can be used in more complex systems where no radiative property is available. - Highlights: • Normalized Lifetime Thermal Lens was used to investigate Nd-doped samples. • Experimental setup and data analysis are simpler than in conventional techniques. • Luminescence quantum yield agrees with that obtained through standard techniques. • This approach, to obtain the quantum yield, can be extended to more complex systems.

  5. Space-filling, multifractal, localized thermal spikes in Si, Ge and ZnO

    Science.gov (United States)

    Ahmad, Shoaib; Abbas, Muhammad Sabtain; Yousuf, Muhammad; Javeed, Sumera; Zeeshan, Sumaira; Yaqub, Kashif

    2018-04-01

    The mechanism responsible for the emission of clusters from heavy ion irradiated solids is proposed to be thermal spikes. Collision cascade-based theories describe atomic sputtering but cannot explain the consistently observed experimental evidence for significant cluster emission. Statistical thermodynamic arguments for thermal spikes are employed here for qualitative and quantitative estimation of the thermal spike-induced cluster emission from Si, Ge and ZnO. The evolving cascades and spikes in elemental and molecular semiconducting solids are shown to have fractal characteristics. Power law potential is used to calculate the fractal dimension. With the loss of recoiling particles' energy the successive branching ratios get smaller. The fractal dimension is shown to be dependent upon the exponent of the power law interatomic potential D = 1/2m. Each irradiating ion has the probability of initiating a space-filling, multifractal thermal spike that may sublime a localized region near the surface by emitting clusters in relative ratios that depend upon the energies of formation of respective surface vacancies.

  6. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

    OpenAIRE

    Khomenkova, L.; Lehninger, D.; Kondratenko, O.; Ponomaryov, S.; Gudymenko, O.; Tsybrii, Z.; Yukhymchuk, V.; Kladko, V.; von Borany, J.; Heitmann, J.

    2017-01-01

    Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The ?...

  7. Basic thermal-mechanical properties and thermal shock, fatigue resistance of swaged + rolled potassium doped tungsten

    Science.gov (United States)

    Zhang, Xiaoxin; Yan, Qingzhi; Lang, Shaoting; Xia, Min; Ge, Changchun

    2014-09-01

    The potassium doped tungsten (W-K) grade was achieved via swaging + rolling process. The swaged + rolled W-K alloy exhibited acceptable thermal conductivity of 159.1 W/m K and ductile-to-brittle transition temperature of about 873 K while inferior mechanical properties attributed to the coarse pores and small deformation degree. Then the thermal shock, fatigue resistance of the W-K grade were characterized by an electron beam facility. Thermal shock tests were conducted at absorbed power densities varied from 0.22 to 1.1 GW/m2 in a step of 0.22 GW/m2. The cracking threshold was in the range of 0.44-0.66 GW/m2. Furthermore, recrystallization occurred in the subsurface of the specimens tested at 0.66-1.1 GW/m2 basing on the analysis of microhardness and microstructure. Thermal fatigue tests were performed at 0.44 GW/m2 up to 1000 cycles and no cracks emerged throughout the tests. Moreover, recrystallization occurred after 1000 cycles.

  8. Improvement of thermal shock resistance of isotropic graphite by Ti-doping

    International Nuclear Information System (INIS)

    Lopez-Galilea, I.; Ordas, N.; Garcia-Rosales, C.; Lindig, S.

    2009-01-01

    Ti-doped isotropic graphite is a promising candidate material for the strike point area of the ITER divertor due to its reduced chemical erosion by hydrogen bombardment and its high thermal shock resistance, mainly due the catalytic effect of TiC on the graphitization leading to an increase of thermal conductivity and to higher mechanical strength. Several manufacturing parameters such as oxidative stabilization treatment, carbonization cycle, graphitization temperature and dwell time during graphitization have been investigated in order to establish a relationship between these parameters and the final properties.

  9. Improvement of thermal shock resistance of isotropic graphite by Ti-doping

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Galilea, I. [Inmaculada Lopez-Galilea, CEIT and Tecnun (University of Navarra), Po de Manuel Lardizabal, 15 E-20018 San Sebastian (Spain)], E-mail: ilopez@ceit.es; Ordas, N.; Garcia-Rosales, C. [Inmaculada Lopez-Galilea, CEIT and Tecnun (University of Navarra), Po de Manuel Lardizabal, 15 E-20018 San Sebastian (Spain); Lindig, S. [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, D-85748 Garching (Germany)

    2009-04-30

    Ti-doped isotropic graphite is a promising candidate material for the strike point area of the ITER divertor due to its reduced chemical erosion by hydrogen bombardment and its high thermal shock resistance, mainly due the catalytic effect of TiC on the graphitization leading to an increase of thermal conductivity and to higher mechanical strength. Several manufacturing parameters such as oxidative stabilization treatment, carbonization cycle, graphitization temperature and dwell time during graphitization have been investigated in order to establish a relationship between these parameters and the final properties.

  10. Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF6 crystal

    International Nuclear Information System (INIS)

    Fukuda, Kentaro; Yanagida, Takayuki; Fujimoto, Yutaka

    2015-01-01

    Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF 6 crystal. Eu doped and Eu, Y co-doped LiCaAlF 6 were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded

  11. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  12. Force interaction and 3D pole movement in double poling.

    Science.gov (United States)

    Stöggl, T; Holmberg, H-C

    2011-12-01

    The aim of this study was to analyze double poling using combined kinetic and 3D kinematic analysis at high skiing speeds as regards pole force components, pole angles and pole behavior during the poling and swing phase. The hypothesis was that a horizontal pole force is more predictive for maximal skiing speed (V(max)) than the resultant pole force. Sixteen elite skiers performed a double-poling V(max) test while treadmill roller skiing. Pole forces and 3D kinematics of pole movement at a speed of 30 km/h were analyzed and related to V(max). The duration of the "preparation phase" showed the strongest relationship with V(max) (r=0.87, Pmax) compared with the resultant pole force. Impact force was not related to V(max). At high skiing speeds, skiers should aim to combine high pole forces with appropriate timing of pole forces and appropriate pole and body positions during the swing and poling phase. The emphasis in training should be on the development of specific strength capacities for pole force production and the utilization of these capacities in double-poling training sessions. © 2011 John Wiley & Sons A/S.

  13. Gas-generated thermal oxidation of a coordination cluster for an anion-doped mesoporous metal oxide.

    Science.gov (United States)

    Hirai, Kenji; Isobe, Shigehito; Sada, Kazuki

    2015-12-18

    Central in material design of metal oxides is the increase of surface area and control of intrinsic electronic and optical properties, because of potential applications for energy storage, photocatalysis and photovoltaics. Here, we disclose a facile method, inspired by geochemical process, which gives rise to mesoporous anion-doped metal oxides. As a model system, we demonstrate that simple calcination of a multinuclear coordination cluster results in synchronic chemical reactions: thermal oxidation of Ti8O10(4-aminobenzoate)12 and generation of gases including amino-group fragments. The gas generation during the thermal oxidation of Ti8O10(4-aminobenzoate)12 creates mesoporosity in TiO2. Concurrently, nitrogen atoms contained in the gases are doped into TiO2, thus leading to the formation of mesoporous N-doped TiO2. The mesoporous N-doped TiO2 can be easily synthesized by calcination of the multinuclear coordination cluster, but shows better photocatalytic activity than the one prepared by a conventional sol-gel method. Owing to an intrinsic designability of coordination compounds, this facile synthetic will be applicable to a wide range of metal oxides and anion dopants.

  14. Vacancy-induced brittle to ductile transition of W-M co-doped Al3Ti (M=Si, Ge, Sn and Pb).

    Science.gov (United States)

    Zhu, Mingke; Wu, Ping; Li, Qiulin; Xu, Ben

    2017-10-25

    We investigated the effect of vacancy formation on brittle (D0 22 ) to ductile (L1 2 -like) transition in Al 3 Ti using DFT calculations. The well-known pseudogap on the density of states of Al 3 Ti migrates towards its Fermi level from far above, via a W - M co-doping strategy, where M is Si, Ge, Sn or Pb respectively. In particular, by a W - M co-doping the underline electronic structure of the pseudogap approaches an octahedral (L1 2 : t 2g , e g ) from the tetragonal (D0 22 : e g , b 2g , a 1g , b 1g ) crystal field. Our calculations demonstrated that (1) a W-doping is responsible for the close up of the energy gap between a 1g and b 1g so that they tend to merge into an e g symmetry, and (2) all M-doping lead to a narrower gap between e g and b 2g (moving towards a t 2g symmetry). Thus, a brittle to ductile transition in Al 3 Ti is possible by adopting this W - M co-doping strategy. We further recommend the use of W-Pb co-doped Al 3 Ti to replace the less anodic Al electrode in Al-battery, due to its improved ductility and high Al diffusivity. Finally this study opens a new field in physics to tailor mechanical properties by manipulating electron energy level(s) towards higher symmetry via vacancy optimization.

  15. Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

    International Nuclear Information System (INIS)

    Bera, M.K.; Mahata, C.; Bhattacharya, S.; Chakraborty, A.K.; Armstrong, B.M.; Gamble, H.S.; Maiti, C.K.

    2008-01-01

    A comparative study on the nature of defects and their relationship to charge trapping with enhanced photosensitivity has been investigated through magnetic resonance and internal photoemission (IPE) experiments for rapid thermal grown oxides (RTO) on strained-Si/Si 0.8 Ge 0.2 and on co-processed bulk-Si (1 0 0) substrates. Both the band and defect-related electronic states were characterized through EPR, IPE, C-V and I-V measurements under UV-illumination. Surface chemical characterization of as-grown ultrathin oxides (5-7 nm) has been performed using high-resolution XPS. Enhancement in Ge-segregation with increasing oxidation temperature is reported. Comparative studies on interface properties and leakage current behavior of rapid thermal oxides have also been studied through fabricating metal-oxide-semiconductor capacitor structures. A degraded electrical property with increasing oxidation temperature is reported. Constant voltage stressing (CVS) in the range of 5.5-7 V was used to study the breakdown characteristics of different samples. We observe a distinguishably different time-to-breakdown (t bd ) phenomenon for bulk-Si and strained-Si/SiGe samples. Whereas the oxide on bulk-Si shows a typical breakdown behavior, the RTO grown oxide on strained-Si/SiGe samples showed a quasi-or soft-breakdown with lower t bd value. It may be pointed out that quasi-breakdown may be a stronger reliability limiting factor for strained-Si/SiGe devices in the oxide thickness range studied

  16. Forward-Backward Charge Asymmetry of Electron Pairs Above the Z0 Pole at CDF

    Science.gov (United States)

    CDF Collaboration

    1996-05-01

    We present a measurement of the forward-backward charge asymmetry of the process pbar p arrow Z0 / γ+X, Z0 / γ arrow e+e- at Q2 > MZ2, using pbar p collisions at √s = 1.8 TeV. The results are from 110 pb-1 of data collected at the Collider Detector at Fermilab during the 1992-1993 and 1994-1995 runs of the Fermilab Tevatron. We measure the asymmetry in a region above the Z0 pole for which Mee > 105 GeV/c2 and in a region near the Z0 pole for which 75 GeV/c2 Fisica Nucleare; the Ministry of Education, Science and Culture of Japan; the Natural Sciences and Engineering Research Council of Canada; the National Science Council of the Republic of China; and the A. P. Sloan Foundation. Supported by U.S. NSF PHY-9406402.

  17. Thermal process induced change of conductivity in As-doped ZnO

    Science.gov (United States)

    Su, S. C.; Fan, J. C.; Ling, C. C.

    2012-02-01

    Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method with different substrate temperature TS. Growing with the low substrate temperature of TS=200°C yielded n-type semi-insulating sample. Increasing the substrate temperature would yield p-type ZnO film and reproducible p-type film could be produced at TS~450°C. Post-growth annealing of the n-type As-doped ZnO sample grown at the low substrate temperature (TS=200°C) in air at 500°C also converted the film to p-type conductivity. Further increasing the post-growth annealing temperature would convert the p-type sample back to n-type. With the results obtained from the studies of positron annihilation spectroscopy (PAS), photoluminescence (PL), cathodoluminescence (CL), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and nuclear reaction analysis (NRA), we have proposed mechanisms to explain for the thermal process induced conduction type conversion as observed in the As-doped ZnO films.

  18. Thermally and optically tunable lasing properties from dye-doped holographic polymer dispersed liquid crystal in capillaries

    Science.gov (United States)

    Chen, Maozhou; Dai, Haitao; Wang, Dongshuo; Yang, Yue; Luo, Dan; Zhang, Xiaodong; Liu, Changlong

    2018-03-01

    In this paper, we investigated tunable lasing properties from the dye-doped holographic polymer dispersed liquid crystal (HPDLC) gratings in capillaries with thermal and optical manners. The thermally tunable range of the lasing from the dye-doped HPDLC reached 8.60 nm with the temperature ranging from 23 °C to 50 °C. The optically tunable laser emission was achieved by doping azo-dye in HPDLC. The transition of azo-dye from trans- to cis-state could induce the reorientation of LC molecules after UV light irradiation, which resulted in the variation of refractive index contrast of LC-rich/polymer-rich layer in HPDLC. Experimentally, the emission wavelength of lasing showed a blueshift (about 2 nm) coupled with decreasing output intensities. The tunable laser based on HPDLC may enable more applications in laser displays, optical communication, biosensors, etc.

  19. Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb : Te ratio

    International Nuclear Information System (INIS)

    Jeong, Jeung-hyun; Lee, Hyun Seok; Lee, Suyoun; Lee, Taek Sung; Kim, Won Mok; Wu Zhe; Cheong, Byung-ki; Kim, Seul Cham; Oh, Kyu Hwan

    2009-01-01

    A phase change memory (PCM) utilizes resistivity changes accompanying fast transitions from an amorphous to a crystalline phase (SET) and vice versa (RESET). An investigation was made on the SET characteristics of PCM cells with Ge-doped SbTe (Ge-ST) materials of two different Sb : Te ratios (4.53 and 2.08). For the material of higher Sb : Te (4.53), a SET operation was completed within several tens of nanoseconds via nucleation-free crystallization whereas the material of lower Sb : Te (2.08) rendered a slower SET operation requiring several hundred nanoseconds for a nucleation-mediated crystallization. From measurements of nucleation and growth kinetics via laser-induced crystallization, the observed SET characteristics of the former case were found to derive from a growth time about 10 3 times shorter than the nucleation time and those of the latter from a much shorter nucleation time as well as a longer growth time than in the former case. The measured nucleation kinetics of the lower Sb : Te (2.08) material is unexpected from the existing data, which has led us to advance an interesting finding that there occurs a trend-reversing change in the nucleation kinetics of the Ge-ST materials around the eutectic composition (Sb : Te ∼2.6); nucleation is accelerated with the increase in the Sb : Te ratio above Sb : Te of 2.6, but with a decrease in the Sb : Te ratio below it.

  20. Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

    Directory of Open Access Journals (Sweden)

    P. P. Paskov

    2017-09-01

    Full Text Available The effect of Si doping on the thermal conductivity of bulk GaN was studied both theoretically and experimentally. The thermal conductivity of samples grown by Hydride Phase Vapor Epitaxy (HVPE with Si concentration ranging from 1.6×1016 to 7×1018 cm-3 was measured at room temperature and above using the 3ω method. The room temperature thermal conductivity was found to decrease with increasing Si concentration. The highest value of 245±5 W/m.K measured for the undoped sample was consistent with the previously reported data for free-standing HVPE grown GaN. In all samples, the thermal conductivity decreased with increasing temperature. In our previous study, we found that the slope of the temperature dependence of the thermal conductivity gradually decreased with increasing Si doping. Additionally, at temperatures above 350 K the thermal conductivity in the highest doped sample (7×1018 cm-3 was higher than that of lower doped samples. In this work, a modified Callaway model adopted for n-type GaN at high temperatures was developed in order to explain such unusual behavior. The experimental data was analyzed with examination of the contributions of all relevant phonon scattering processes. A reasonable match between the measured and theoretically predicted thermal conductivity was obtained. It was found that in n-type GaN with low dislocation densities the phonon-free-electron scattering becomes an important resistive process at higher temperatures. At the highest free electron concentrations, the electronic thermal conductivity was suggested to play a role in addition to the lattice thermal conductivity and compete with the effect of the phonon-point-defect and phonon-free-electron scattering.

  1. High-pressure effect in spectroscopic and structural properties of Sm{sup 3+} doped GeO{sub 2}-PbO glass

    Energy Technology Data Exchange (ETDEWEB)

    Rovani, Pablo Roberto; Herrera, Alvaro; Azevedo, Gustavo de Medeiros; Balzaretti, Naira Maria, E-mail: rovani.pr@gmail.com [Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre (Brazil)

    2016-07-01

    Full text: The effect of densification under high pressure (7.7 GPa) on spectroscopic and structural properties of Ge{sub 2}O-PbO glass doped with Sm{sup 3+} ion were investigated. Raman spectroscopy and Extended X-ray Absorption Fine Structure (EXAFS) were used to investigate the effect of high pressure on the structural properties. The spectroscopic properties were investigated through the absorption and luminescence spectra recorded at room temperature The splitting in the VIS-NIR fluorescence bands increased after densification. Judd-Ofelt (J-O) theory was applied to evaluate phenomenological JO intensity parameters Ω (λ = 2, 4 and 6). The effect of high pressure on the transition probabilities (A{sub R}), radiative lifetimes (t{sub R}), branching ratio (b{sub R}) and stimulated emission cross-section s(l{sub p}) was also investigated. The results obtained from EXAFS indicated changes around the vicinity of Sm{sup 3+} ion which would explain the quenching in emission intensities in the visible range. A novel band related to the transition {sup 4}G{sub 5/2} to {sup 6}F{sub 11/2} was observed in the Sm{sup 3+} doped GeO{sub 2}-PbO. The obtained results may be useful for compact light sources, optical devices in the visible region and optoelectronic devices. (author)

  2. Magnetotransport, structural and optical characterization of p-type modulation doped heterostructures with high Ge content Si1-xGex channel grown by SS-MBE on Si1-yGey/Si(001) virtual substrates

    International Nuclear Information System (INIS)

    Myronov, M.

    2001-04-01

    This thesis is a report on experimental investigations of magnetotransport, structural and optical properties of p-type modulation doped (MOD) heterostructures with Si 1-x Ge x channel of high Ge content (0.6 1-y Ge y /Si(001) virtual substrate (VS). The active layers of MOD heterostructures were grown by solid source molecular beam epitaxy (SS-MBE). The VSs were grown either by SS-MBE or low-pressure chemical vapour deposition (LP-CVD). The influence of thermal annealing on magnetotransport, structural and optical properties of Si 1-x Ge x /Si 1-y Ge y heterostructures was studied by performing the post growth furnace thermal annealing (FTA) treatments in the temperature range of 600-900C for 30min and rapid thermal annealing (RTA) treatments at temperature 750C for 30sec. Structural and optical analysis of p-type MOD Si 1-x Ge x /Si 1-y Ge y heterostructures involved the techniques of cross-sectional transmission electron microscopy, ultra low energy secondary ion mass spectrometry, photoluminescence spectroscopy, micro-Raman spectroscopy and scanning white-light interferometry. From the combinations of experimental results obtained by these techniques the Ge composition in the SiGe heteroepilayers, their thicknesses, state of strain in the heteroepilayers and dislocations microstructure in VSs were obtained. After post growth thermal annealing treatments were observed broadening of the Si 1-x Ge x channel accompanied with the reduction of Ge content in the channel and smearing of Si 1-x Ge x /Si 1-y Ge y interfaces. The Si 0.7 Ge 0.3 on low-temperature Si buffer VSs with very good structural properties were designed and grown by SS-MBE. These include: relatively thin 850nm total thickness of VS, 4-6nm Peak-to-Valley values of surface roughness, less than 10 5 cm -2 threading dislocations density and more than 95% degree of relaxation in the top layers of VS. The Hall mobility and sheet carrier density of as-grown and annealed p-type MOD Si 1-x Ge x /Si 1-y Ge y

  3. Thermal evolution of exchange interactions in lightly doped barium hexaferrites

    Energy Technology Data Exchange (ETDEWEB)

    Trukhanov, S.V., E-mail: truhanov@ifttp.bas-net.by [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanov, A.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Kostishyn, V.G.; Panina, L.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); Turchenko, V.A. [Joint Institute for Nuclear Research, Joliot-Curie Str., 141980 Dubna (Russian Federation); Donetsk Institute of Physics and Technology named after A.A. Galkin of the NAS of Ukraine, 72 R.Luxemburg Str., 83114 Donetsk (Ukraine); Kazakevich, I.S. [SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanov, An.V. [National University of Science and Technology MISiS, Leninsky Prospekt, 4, 119049 Moscow (Russian Federation); SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Trukhanova, E.L.; Natarov, V.O. [SSPA “Scientific and practical materials research centre of NAS of Belarus”, P. Brovki Str., 19, 220072 Minsk, Belorussia (Belarus); Balagurov, A.M. [Joint Institute for Nuclear Research, Joliot-Curie Str., 141980 Dubna (Russian Federation)

    2017-03-15

    The lightly doped BaFe{sub 12−x}D{sub x}O{sub 19} (D=Al{sup 3+}, In{sup 3+}; x=0.1 and 0.3) polycrystalline hexaferrite samples have been investigated by powder neutron diffractometry as well as by vibration sample magnetometry in a wide temperature range from 4 K up to 740 K and in magnetic field up to 14 T to establish the nature of Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) – O{sup 2-} - Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) indirect exchange interactions. The crystal structure features such as the ionic coordinates and lattice parameters have been defined and Rietveld refined. The Invar effect has been observed in low temperature range below 150 K. It was explained by the thermal oscillation anharmonicity of ions. It is established that the ferrimagnet-paramagnet phase transition is a standard second-order one. From the macroscopic magnetization measurement the Curie temperature and ordered magnetic moment per nominal iron ion are obtained. From the microscopic diffraction measurement the magnetic moments at all the nonequivalent ionic positions and total magnetic moment per iron ion have been obtained at different temperatures down to 4 K. The light diamagnetic doping mechanism and magnetic structure model are proposed. The effect of light diamagnetic doping on nature of Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) – O{sup 2-} - Fe{sup 3+}(Al{sup 3+}, In{sup 3+}) indirect exchange interactions with temperature increase is discussed. - Highlights: • Crystal structure for lightly doped barium hexaferrites was investigated. • Atomic coordinates and lattice parameters were Rietveld refined. • Magnetic properties for lightly doped barium hexaferrites was investigated. • Magnetic structure for lightly doped barium hexaferrites was investigated. • Magnetic moments at different position and total moment per iron ion were defined.

  4. First-principles study of nitrogen doping in cubic and amorphous Ge2Sb2Te5

    Science.gov (United States)

    Caravati, S.; Colleoni, D.; Mazzarello, R.; Kühne, T. D.; Krack, M.; Bernasconi, M.; Parrinello, M.

    2011-07-01

    We investigated the structural, electronic and vibrational properties of amorphous and cubic Ge2Sb2Te5 doped with N at 4.2 at.% by means of large scale ab initio simulations. Nitrogen can be incorporated in molecular form in both the crystalline and amorphous phases at a moderate energy cost. In contrast, insertion of N in the atomic form is very energetically costly in the crystalline phase, though it is still possible in the amorphous phase. These results support the suggestion that N segregates at the grain boundaries during the crystallization of the amorphous phase, resulting in a reduction in size of the crystalline grains and an increased crystallization temperature.

  5. Thermal shock resistance of thick boron-doped diamond under extreme heat loads

    NARCIS (Netherlands)

    De Temmerman, G.; Dodson, J.; Linke, J.; Lisgo, S.; Pintsuk, G.; Porro, S.; Scarsbrook, G.

    2011-01-01

    Thick free-standing boron-doped diamonds were prepared by microwave plasma assisted chemical vapour deposition. Samples with a final thickness close to 5 mm and with lateral dimensions 25 x 25 mm were produced. The thermal shock resistance of the material was tested by exposure in the JUDITH

  6. Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

    Science.gov (United States)

    Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

  7. Preparation method and thermal properties of samarium and europium-doped alumino-phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Sava, B.A., E-mail: savabogdanalexandru@yahoo.com [National Institute of Research and Development for Optoelectronics, Department for Optospintronics, 409 Atomistilor Street, P.O. Box MG – 5, RO-77125 Magurele (Romania); Elisa, M., E-mail: astatin18@yahoo.com [National Institute of Research and Development for Optoelectronics, Department for Optospintronics, 409 Atomistilor Street, P.O. Box MG – 5, RO-77125 Magurele (Romania); Boroica, L., E-mail: boroica_lucica@yahoo.com [National Institute for Lasers, Plasma and Radiation Physics, 77125 Magurele (Romania); Monteiro, R.C.C., E-mail: rcm@fct.unl.pt [Center of Materials Research/Institute for Nanostructures, Nanomodelling and Nanofabrication, (CENIMAT/I3N), Department of Materials Sciences, Faculty of Sciences and Technology, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal)

    2013-12-01

    Highlights: • Improved preparation method of rare-earth-doped phosphate glasses was done. • Working and annealing temperatures were lower than for undoped phosphate glass. • Doped glass viscosity is also lower and has quasi-linear variation with temperature. • Exothermic peak appears at about 555 °C and 685 °C, due to devitrification in glass. -- Abstract: The present work investigates alumino-phosphate glasses from Li{sub 2}O–BaO–Al{sub 2}O{sub 3}–La{sub 2}O{sub 3}–P{sub 2}O{sub 5} system containing Sm{sup 3+} and Eu{sup 3+} ions, prepared by two different ways: a wet raw materials mixing route followed by evaporation and melt-quenching, and by remelting of shards. The linear thermal expansion coefficient measured by dilatometry is identical for both rare-earth-doped phosphate glasses. Comparatively to undoped phosphate glass the linear thermal expansion coefficient increases with 2 × 10{sup −7} K{sup −1} when dopants are added. The characteristic temperatures very slowly decrease but can be considered constant with atomic weight, atomic number and f electrons number of the doping ions in the case of T{sub g} (vitreous transition temperature) and T{sub sr} (high annealing temperature) but slowly increase in the case of T{sub ir} (low annealing temperature–strain point) and very slowly increase, being practically constant in the case of T{sub D} (dilatometric softening temperature). Comparatively to undoped phosphate glass the characteristic temperatures of Sm and Eu-doped glasses present lower values. The higher values of electrical conductance for both doped glasses, comparatively to usual soda-lime-silicate glass, indicate a slightly reduced stability against water. The viscosity measurements, showed a quasi-linear variation with temperature the mean square deviation (R{sup 2}) being ranged between 0.872% and 0.996%. The viscosity of doped glasses comparatively to the undoped one is lower at the same temperature. Thermogravimetric

  8. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  9. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  10. The cos2φ azimuthal asymmetry of unpolarized dilepton production at the Z pole

    International Nuclear Information System (INIS)

    Lu Zhun; Schmidt, Ivan

    2011-01-01

    We calculate the Boer-Mulders effect contribution to the cos2φ azimuthal asymmetry of unpolarized dilepton production near the Z-pole. Based on the tree-level expression in the transverse momentum dependent factorization framework, we show that the corresponding asymmetry near the Z-pole is negative, which is opposite to the asymmetry in the low Q 2 region, dominated by the production via a virtual photon. We calculate the asymmetry generated by the Boer-Mulders effect near the Z-pole at the Relativistic Heavy Ion Collider (RHIC), with √(s)=500 GeV. We find that the magnitude of the asymmetry is several percent, and therefore it is measurable. The experimental confirmation of this sign change of the asymmetry from the low Q 2 region to the Z-pole provides direct evidence of the chiral-odd structure of quarks inside an unpolarized nucleon.

  11. Dose-rate and the reciprocity law: TL response of Ge-doped SiO2 optical fibers at therapeutic radiation doses

    International Nuclear Information System (INIS)

    Abdul Rahman, A.T.; Nisbet, A.; Bradley, D.A.

    2011-01-01

    An investigation has been made on commercially available Ge-doped SiO 2 optical fibers as a novel thermoluminescence system for radiotherapy dosimetry. This dosimeter has previously been shown by the group to provide sensitive dosimetry over a wide range of electron and photon dose, suitable for the needs of radiotherapy. In addition the optical fiber offers small physical size (125 μm diameter) and hence high spatial resolution. The reciprocity between thermoluminescence (TL) yield of Ge-doped SiO 2 optical fibers and dose has been investigated for fixed radiation dose for a range of photon and electron dose rates. For electron beams of nominal energies in the range of 9-20 MeV, we have investigated the TL response of these fibers for dose rates between 100 and 1000 cGy min -1 . For photon beams of nominal energies in the range of 6-15 MV, we have used dose rates of 100-600 cGy min -1 . Reproducibility and fading at fixed absorbed dose (3 Gy) and dose rate for the optical fibers were also investigated. At fixed dose rates, the TL optical fibers were found to produce a flat TL yield within 4% (1σ) and 3% (1σ) for electron and photon beams, respectively. The optical fibers demonstrated good reproducibility (±1.5%), low residual signal for a readout temperature of 300 o C and negligible fading. A weak dependence on dose-rate has been observed in the range of 3.4-3.9% for electrons (with an associated uncertainty of 4%) and 2.4-2.9% for photons (with an associated uncertainty of <4%). For electron and photon energies we note a consistent trend towards lower response in the TL yield of between 3.4-3.9% and 2.4-2.7%, respectively, at the higher dose rates in comparison with the response at lower dose rates. In addition we note an appreciable systematic energy dependence for both electron and photon beams. It is important to take such factors into account for providing precise and accurate radiotherapy dosimetry. It is also apparent that the optical fibers can be re

  12. Thermal conductivity of electron-doped CaMnO3 perovskites: Local lattice distortions and optical phonon thermal excitation

    International Nuclear Information System (INIS)

    Wang Yang; Sui Yu; Wang Xianjie; Su Wenhui; Liu Xiaoyang; Fan, Hong Jin

    2010-01-01

    The thermal transport properties of a series of electron-doped CaMnO 3 perovskites have been investigated. Throughout the temperature range 5-300 K, phonon thermal conductivity is dominant, and both electron and spin wave contributions are negligible. The short phonon mean free paths in this system result in the relatively low thermal conductivities. The strong phonon scatterings stem from the A-site mismatch and bond-length fluctuations induced by local distortions of MnO 6 octahedra. The thermal conductivity in the magnetically ordered state is enhanced as a result of the decrease in spin-phonon scattering. The results also indicate that above the magnetic ordering temperature, observable thermal excitation of optical phonons occurs. The contribution of optical phonons to thermal conductivity becomes non-negligible and is proposed to play an important role in the glass-like thermal transport behavior (i.e. positive temperature dependence of the thermal conductivity) in the paramagnetic state. These features can be understood in terms of an expression of thermal conductivity that includes both acoustic and optical phonon terms.

  13. Electrically active, doped monocrystalline silicon nanoparticles produced by hot wire thermal catalytic pyrolysis

    CSIR Research Space (South Africa)

    Scriba, MR

    2011-05-01

    Full Text Available Doped silicon nanoparticles have successfully been produced by hot wire thermal catalytic pyrolysis at 40 mbar and a filament temperature of 1800 °C, using a mixture of silane and diborane or phosphine. All particles are monocrystalline with shapes...

  14. Thermally and optically stimulated radiative processes in Eu and Y co-doped LiCaAlF{sub 6} crystal

    Energy Technology Data Exchange (ETDEWEB)

    Fukuda, Kentaro, E-mail: ken-fukuda@tokuyama.co.jp [Tokuyama Corporation, 1-1 Mikage-cho, Shunan-shi, Yamaguchi 745-8648 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu, Fukuoka 808-0196 (Japan)

    2015-06-01

    Yttrium co-doping was attempted to enhance dosimeter performance of Eu doped LiCaAlF{sub 6} crystal. Eu doped and Eu, Y co-doped LiCaAlF{sub 6} were prepared by the micro-pulling-down technique, and their dosimeter characteristics such as optically stimulated luminescence (OSL) and thermally stimulated luminescence (TSL) were investigated. By yttrium co-doping, emission intensities of OSL and TSL were enhanced by some orders of magnitude. In contrast, scintillation characteristics of yttrium co-doped crystal such as intensity of prompt luminescence induced by X-ray and light yield under neutron irradiation were degraded.

  15. Fabrication of multilayered Ge nanocrystals embedded in SiOxGeNy films

    International Nuclear Information System (INIS)

    Gao Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang Yidan; Perez-Wurfl, Ivan; Flynn, Chris

    2008-01-01

    Multilayered Ge nanocrystals embedded in SiO x GeN y films have been fabricated on Si substrate by a (Ge + SiO 2 )/SiO x GeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 deg. C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1 , which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2 ) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction

  16. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Martin Steglich

    2013-07-01

    Full Text Available The growth of Ge on Si(100 by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C, films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  17. Thermal and chemical durability of nitrogen-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Liu Hao; Zhang Yong; Li Ruying; Sun Xueliang; Abou-Rachid, Hakima

    2012-01-01

    Nitrogen-doped carbon nanotubes (CN x tubes) with nitrogen content of 7.6 at.% are synthesized on carbon papers. Thermal and chemical stability of the nanotubes are investigated by thermogravimetric analysis, differential scanning calorimetry and X-ray photoelectron spectroscopy techniques. The results indicate that the nitrogen can be firmly kept in the nanotubes after annealing at 300 °C in air. Under an argon atmosphere, the nitrogen would not release until 670 °C, and half of the nitrogen incorporated is released after annealing at 700 °C for 30 min. Chemical stability investigation indicates that the nitrogen incorporated in the nanotubes is very stable under the thermal and acid environment comparable to working condition of proton exchange membrane (PEM) fuel cells. Profile of the nitrogen species inside the nanotubes reveals that graphite-like nitrogen releases slower than any other kind of nitrogen in the nanotubes during the chemical stability measurement. These CN x tubes synthesized by this simple chemical vapor deposition method are expected to be suitable for many applications, such as PEM fuel cells that work under both thermal and corrosive conditions and some other mild thermal environments.

  18. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    International Nuclear Information System (INIS)

    Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin

    2013-01-01

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm 2 /V s and an on–off current ratio over 10 6 . •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm 2 /V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm 2 /V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10 6 . Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films

  19. Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Su, Bo-Yuan [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Chu, Sheng-Yuan, E-mail: chusy@mail.ncku.edu.tw [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Center for Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Juang, Yung-Der [Department of Materials Science, National University of Tainan, Tainan 700, Taiwan (China); Liu, Ssu-Yin [Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2013-12-15

    Graphical abstract: Mg-doped IGZO TFTs showed improved TFT performance and thermal stability due to fewer oxygen deficiencies and less interface electron trapping. Highlights: •We fabricated Mg-doped IGZO TFTs with improved performance using solution-process. •Mg doping reduced the oxygen deficiencies and less interface electron trapping of a-IGZO films. •Mg dope-TFT showed high mobility of 2.35 cm{sup 2}/V s and an on–off current ratio over 10{sup 6}. •For better device stability (gate-bias and thermal stability) was proved. -- Abstract: The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0–10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol–gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm{sup 2}/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm{sup 2}/V s and 0.74 V/dec, respectively), and an on–off current ratio of over 10{sup 6}. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

  20. Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures.

    Science.gov (United States)

    Khomenkova, L; Lehninger, D; Kondratenko, O; Ponomaryov, S; Gudymenko, O; Tsybrii, Z; Yukhymchuk, V; Kladko, V; von Borany, J; Heitmann, J

    2017-12-01

    Ge-rich ZrO 2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO 2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO 2 . The "start point" of this process is in the range of 640-700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO 2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO 2 matrix. The mechanism of phase separation is discussed in detail.

  1. Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing

    International Nuclear Information System (INIS)

    Chen Liang; Zhang Wan-Rong; Jin Dong-Yue; Shen Pei; Xie Hong-Yun; Ding Chun-Bao; Xiao Ying; Sun Bo-Tao; Wang Ren-Qing

    2011-01-01

    A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. (interdisciplinary physics and related areas of science and technology)

  2. Silver environment and covalent network rearrangement in GeS3–Ag glasses

    International Nuclear Information System (INIS)

    Rátkai, L; Jóvári, P; Kaban, I; Wágner, T; Kolář, J; Valková, S; Voleská, Iva; Beuneu, B

    2013-01-01

    The structure of Ag-doped GeS 3 glasses (0, 15, 20, 25 at.% Ag) was investigated by diffraction techniques and extended x-ray absorption fine structure measurements. Structural models were obtained by fitting the experimental datasets simultaneously by the reverse Monte Carlo simulation technique. It is observed that Ge has mostly S neighbours in GeS 3 , but Ge–Ge bonds appear already at 15% Ag content. Sulfur has ∼2 S/Ge neighbours over the whole concentration range, while the S–Ag coordination number increases with increasing Ag content. Ag–Ag pairs can already be found at 15% Ag. The Ag–S mean coordination number changes from 2.17 ± 0.2 to 2.86 ± 0.2 between 15% and 25% Ag content. Unlike the As–S network in AsS 2 –25Ag glass, the Ge–S network is not fragmented upon Ag-doping of GeS 3 glass. (paper)

  3. Thermal lens and all optical switching of new organometallic compound doped polyacrylamide gel

    Science.gov (United States)

    Badran, Hussain Ali

    In this work thermal lens spectrometry (TLS) is applied to investigate the thermo-optical properties of new organometallic compound containing azomethine group, Dichloro bis [2-(2-hydroxybenzylideneamino)-5-methylphenyl] telluride platinum(II), doped polyacrylamide gel using transistor-transistor logic (TTL) modulated cw 532 nm laser beam as an excitation beam modulated at 10 Hz frequency and probe beam wavelength 635 nm at 14 mW. The technique is applied to determine the thermal diffusivities, ds/dT and the linear thermal expansion coefficient of the sample. All-optical switching effects with low background and high stability are demonstrated.

  4. Thermal Conductivity and Specific Heat Capacity of Dodecylbenzenesulfonic Acid-Doped Polyaniline Particles—Water Based Nanofluid

    OpenAIRE

    Chew, Tze; Daik, Rusli; Hamid, Muhammad

    2015-01-01

    Nanofluid has attracted great attention due to its superior thermal properties. In this study, chemical oxidative polymerization of aniline was carried out in the presence of dodecylbenzenesulfonic acid (DBSA) as a dopant. Particles of DBSA-doped polyaniline (DBSA-doped PANI) with the size range of 15 to 50 nm were obtained, as indicated by transmission electron microscope (TEM). Results of ultra violet-visible (UV-Vis) absorption and Fourier transform infrared (FTIR) spectroscopies as well ...

  5. Thermal Effect on the Structural, Electrical, and Optical Properties of In-Line Sputtered Aluminum Doped Zinc Oxide Films Explored with Thermal Desorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Shang-Chou Chang

    2014-01-01

    Full Text Available This work investigates the thermal effect on the structural, electrical, and optical properties of aluminum doped zinc oxide (AZO films. The AZO films deposited at different temperatures were measured using a thermal desorption system to obtain their corresponding thermal desorption spectroscopy (TDS. In addition to obtaining information of thermal desorption, the measurement of TDS also has the effect of vacuum annealing on the AZO films. The results of measuring TDS imply part of the doped aluminum atoms do not stay at substituted zinc sites in AZO films. The (002 preferential direction of the AZO films in X-ray diffraction spectra shifts to a lower angle after measurement of TDS. The grain size grows and surface becomes denser for all AZO films after measurement of TDS. The carrier concentration, mobility, and average optical transmittance increase while the electrical resistivity decreases for AZO films after measurement of TDS. These results indicate that the AZO films deposited at 200°C are appropriate selections if the AZO films are applied in device fabrication of heat-produced process.

  6. Highly reproducible alkali metal doping system for organic crystals through enhanced diffusion of alkali metal by secondary thermal activation.

    Science.gov (United States)

    Lee, Jinho; Park, Chibeom; Song, Intek; Koo, Jin Young; Yoon, Taekyung; Kim, Jun Sung; Choi, Hee Cheul

    2018-05-16

    In this paper, we report an efficient alkali metal doping system for organic single crystals. Our system employs an enhanced diffusion method for the introduction of alkali metal into organic single crystals by controlling the sample temperature to induce secondary thermal activation. Using this system, we achieved intercalation of potassium into picene single crystals with closed packed crystal structures. Using optical microscopy and Raman spectroscopy, we confirmed that the resulting samples were uniformly doped and became K 2 picene single crystal, while only parts of the crystal are doped and transformed into K 2 picene without secondary thermal activation. Moreover, using a customized electrical measurement system, the insulator-to-semiconductor transition of picene single crystals upon doping was confirmed by in situ electrical conductivity and ex situ temperature-dependent resistivity measurements. X-ray diffraction studies showed that potassium atoms were intercalated between molecular layers of picene, and doped samples did not show any KH- nor KOH-related peaks, indicating that picene molecules are retained without structural decomposition. During recent decades, tremendous efforts have been exerted to develop high-performance organic semiconductors and superconductors, whereas as little attention has been devoted to doped organic crystals. Our method will enable efficient alkali metal doping of organic crystals and will be a resource for future systematic studies on the electrical property changes of these organic crystals upon doping.

  7. Conductance relaxation in GeBiTe: Slow thermalization in an open quantum system

    Science.gov (United States)

    Ovadyahu, Z.

    2018-02-01

    This work describes the microstructure and transport properties of GeBixTey films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbxTey , is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p -type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced photoconductive response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. Persistent photoconductivity is observable in GeBixTey films at the entire range of sheet resistances studied in this work (≈103Ω to ≈55 M Ω ). The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched exponential (Kohlrausch law). Intrinsic electron-glass effects, on the other hand, are observable in thin films of GeBixTey only for samples that are strongly localized just like it was noted with the seven electron glasses previously studied. These include a memory dip which is the defining attribute of the phenomenon. The memory dip in GeBixTey is the widest amongst the germanium-telluride alloys studied to date consistent with the high carrier concentration N ≥1021cm-3 of this compound. The thermalization process exhibited in either the PPC state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some nontrivial effects, in particular, the visibility of the memory dip is enhanced in the PPC state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle interaction and quench disorder is discussed.

  8. Integrated fiber Michelson interferometer based on poled hollow twin-core fiber.

    Science.gov (United States)

    Liu, Zhihai; Bo, Fusen; Wang, Lei; Tian, Fengjun; Yuan, Libo

    2011-07-01

    We propose an integrated fiber Michelson interferometer based on a poled hollow twin-core fiber. The Michelson interferometer can be used as an electro-optic modulator by thermal poling one core of the twin-core fiber and introducing second-order nonlinearity in the fiber. The proposed fiber Michelson interferometer is experimentally demonstrated under driving voltages at the frequency range of 149 to 1000 Hz. The half-wave voltage of the poled fiber is 135 V, and the effective second-order nonlinear coefficient χ² is 1.23 pm/V.

  9. Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

    International Nuclear Information System (INIS)

    Ogawa, Shingo; Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji; Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi

    2015-01-01

    The thermal diffusion of germanium and oxygen atoms in HfO 2 /GeO 2 /Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that 18 O-tracers composing the GeO 2 underlayers diffuse within the HfO 2 overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO 2 also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO 2 surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO x interlayers between the HfO 2 and GeO 2 layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks

  10. Dielectric, thermal and mechanical properties of ADP doped PVA composites

    Science.gov (United States)

    Naik, Jagadish; Bhajantri, R. F.; Ravindrachary, V.; Rathod, Sunil G.; Sheela, T.; Naik, Ishwar

    2015-06-01

    Polymer composites of poly(vinyl alcohol) (PVA), doped with different concentrations of ammonium dihydrogen phosphate (ADP) has been prepared by solution casting. The formation of complexation between ADP and PVA was confirmed with the help of Fourier transforms infrared (FTIR) spectroscopy. Thermogravimetric analysis (TGA) shows thermal stability of the prepared composites. Impedance analyzer study revealed the increase in dielectric constant and loss with increase the ADP concentration and the strain rate of the prepared composites decreases with ADP concentration.

  11. Physical, thermal, infrared and optical properties of Nd3+ doped lithium–lead-germanate glasses

    International Nuclear Information System (INIS)

    Veeranna Gowda, V.C.

    2015-01-01

    The structure–property relationships of neodymium doped lithium–lead-germanate glasses were investigated. The density was found to increase with the increase of Nd 2 O 3 concentration and its variation is explained in terms of its molecular mass, structural transformation and packing density. Addition of modifier oxide to lead-germanate glass suggests a decreased free space within the glass matrix, resulting in the formation of stiff network. The increase in glass transition temperature specifies strengthening of glass by forming bridging oxygens. The optical properties of glass were measured employing UV–visible spectroscopy. The refractive index values varied nonlinearly with Nd 2 O 3 concentration and were speculated to depend on the electronic polarizability of oxide glasses. The frequencies of the infrared absorption bands were affected marginally and the absorption peaks revealed that the glass matrix consists of [GeO 4/2 ], [GeO 6/2 ] and [PbO 4/2 ] structural units

  12. First principles study of the ground state properties of Si, Ga, and Ge doped Fe50Al50

    Science.gov (United States)

    Pérez, Carlos Ariel Samudio; dos Santos, Antonio Vanderlei

    2018-06-01

    The first principles calculation of the structural, electronic and associated properties of the Fe50Al50 alloy (B2 phase) doped by s-p elements (Im = Si, Ga, and Ge) are performed as a function of the atomic concentration on the basis of the Full Potential Linear Augmented Plane Wave (FP-LAPW) method as implemented in the WIEN2k code. The Al substitution by Im (Si and Ge) atoms (principally at a concentration of 6.25 at%) induces a pronounced redistribution of the electronic charge leading to a strong Fe-Im interaction with covalent bonding character. At the same time, decrease the lattice volume (V) while increase the bulk modulus (B). For the alloys containing Ga, the Fe-Ga interaction is also observed but the V and B of the alloy are very near to that of pure Fe-Al alloy. The magnetic moment and hyperfine parameters observed at the lattice sites of studied alloys also show variations, they increase or decrease in relation to that in Fe50Al50 according to the Im that substitutes Al.

  13. Monolithic Ge-on-Si lasers for large-scale electronic-photonic integration

    Science.gov (United States)

    Liu, Jifeng; Kimerling, Lionel C.; Michel, Jurgen

    2012-09-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500-1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  14. Monolithic Ge-on-Si lasers for large-scale electronic–photonic integration

    International Nuclear Information System (INIS)

    Liu, Jifeng; Kimerling, Lionel C; Michel, Jurgen

    2012-01-01

    A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic–photonic integration in future generations of high-performance computation and communication systems. In this paper we present a comprehensive review on the development of monolithic Ge-on-Si lasers for this application. Starting with a historical review of light emission from the direct gap transition of Ge dating back to the 1960s, we focus on the rapid progress in band-engineered Ge-on-Si lasers in the past five years after a nearly 30-year gap in this research field. Ge has become an interesting candidate for active devices in Si photonics in the past decade due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS) processing. In 2007, we proposed combing tensile strain with n-type doping to compensate the energy difference between the direct and indirect band gap of Ge, thereby achieving net optical gain for CMOS-compatible diode lasers. Here we systematically present theoretical modeling, material growth methods, spontaneous emission, optical gain, and lasing under optical and electrical pumping from band-engineered Ge-on-Si, culminated by recently demonstrated electrically pumped Ge-on-Si lasers with >1 mW output in the communication wavelength window of 1500–1700 nm. The broad gain spectrum enables on-chip wavelength division multiplexing. A unique feature of band-engineered pseudo-direct gap Ge light emitters is that the emission intensity increases with temperature, exactly opposite to conventional direct gap semiconductor light-emitting devices. This extraordinary thermal anti-quenching behavior greatly facilitates monolithic integration on Si microchips where temperatures can reach up to 80 °C during operation. The same band-engineering approach can be extended to other pseudo-direct gap semiconductors, allowing us to achieve efficient light emission at wavelengths previously

  15. Dose-rate and the reciprocity law: TL response of Ge-doped SiO{sub 2} optical fibers at therapeutic radiation doses

    Energy Technology Data Exchange (ETDEWEB)

    Abdul Rahman, A.T., E-mail: a.t.abdulrahman@surrey.ac.uk [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom); School of Physics and Material Studies, Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia (UiTM), Campus of Negeri Sembilan, 72000 Kuala Pilah (Malaysia); Nisbet, A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom); Departments of Medical Physics, the Royal Surrey County Hospital (RSCH) NHS Trust, Edgerton Road, Guildford GU2 7XX, Surrey (United Kingdom); Bradley, D.A. [Centre for Nuclear and Radiation Physics, Department of Physics, University of Surrey, Guildford GU2 7XH, Surrey (United Kingdom)

    2011-10-01

    An investigation has been made on commercially available Ge-doped SiO{sub 2} optical fibers as a novel thermoluminescence system for radiotherapy dosimetry. This dosimeter has previously been shown by the group to provide sensitive dosimetry over a wide range of electron and photon dose, suitable for the needs of radiotherapy. In addition the optical fiber offers small physical size (125 {mu}m diameter) and hence high spatial resolution. The reciprocity between thermoluminescence (TL) yield of Ge-doped SiO{sub 2} optical fibers and dose has been investigated for fixed radiation dose for a range of photon and electron dose rates. For electron beams of nominal energies in the range of 9-20 MeV, we have investigated the TL response of these fibers for dose rates between 100 and 1000 cGy min{sup -1}. For photon beams of nominal energies in the range of 6-15 MV, we have used dose rates of 100-600 cGy min{sup -1}. Reproducibility and fading at fixed absorbed dose (3 Gy) and dose rate for the optical fibers were also investigated. At fixed dose rates, the TL optical fibers were found to produce a flat TL yield within 4% (1{sigma}) and 3% (1{sigma}) for electron and photon beams, respectively. The optical fibers demonstrated good reproducibility ({+-}1.5%), low residual signal for a readout temperature of 300 {sup o}C and negligible fading. A weak dependence on dose-rate has been observed in the range of 3.4-3.9% for electrons (with an associated uncertainty of 4%) and 2.4-2.9% for photons (with an associated uncertainty of <4%). For electron and photon energies we note a consistent trend towards lower response in the TL yield of between 3.4-3.9% and 2.4-2.7%, respectively, at the higher dose rates in comparison with the response at lower dose rates. In addition we note an appreciable systematic energy dependence for both electron and photon beams. It is important to take such factors into account for providing precise and accurate radiotherapy dosimetry. It is also

  16. Ge-on-Si : Single-Crystal Selective Epitaxial Growth in a CVD Reactor

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.B.; Nanver, L.K.

    2012-01-01

    A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the

  17. Development of high responsivity Ge:Ga photoconductors

    International Nuclear Information System (INIS)

    Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

    1984-06-01

    Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

  18. Three-dimensional fabrication and characterisation of core-shell nano-columns using electron beam patterning of Ge-doped SiO2

    DEFF Research Database (Denmark)

    Gontard, Lionel C.; Jinschek, Joerg R.; Ou, Haiyan

    2012-01-01

    electron tomography. The results show that transformations in insulators that have been subjected to intense irradiation using charged particles can be studied directly in three dimensions. The fabricated structures include core-shell nano-columns, sputtered regions, voids, and clusters. (C) 2012 American......A focused electron beam in a scanning transmission electron microscope (STEM) is used to create arrays of core-shell structures in a specimen of amorphous SiO2 doped with Ge. The same electron microscope is then used to measure the changes that occurred in the specimen in three dimensions using...

  19. Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

    Science.gov (United States)

    Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

    2016-08-01

    A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

  20. N-doped Sb2Te phase change materials for higher data retention

    International Nuclear Information System (INIS)

    Zhu Min; Wu Liangcai; Rao Feng; Song Zhitang; Li Xuelai; Peng Cheng; Zhou Xilin; Ren Kun; Yao Dongning; Feng Songlin

    2011-01-01

    Highlights: → Crystallization temperatures of the N-doped Sb 2 Te films increase remarkably. → The E a of N-doped Sb 2 Te films increase first, and then decrease. → The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN1 films. → The power consumption of PCRAM test cell based on Sb 2 TeN1 film is low. - Abstract: Crystallization temperatures of the Sb 2 Te films increase remarkably from 139.4 deg. C to 223.0 deg. C as the N 2 flow rates increasing from 0 sccm to 1.5 sccm. Electrical conduction activation energies for amorphous and crystalline states increase by doping nitrogen. A small amount of nitrogen atoms can locate at interstitial sites in the hexagonal structure, generating a strain field, and improving the thermal stability of amorphous state. The best 10-years lifetime at temperature up to 141 deg. C is found in Sb 2 TeN 1 films. Doping excessively high nitrogen in Sb 2 Te film will form nitride and make Te separate out. As a result, the activation energy for crystallization decreases instead, accompanying with the deterioration of thermal stability. The power consumption of PCRAM test cell based on Sb 2 TeN 1 film is ten times lower than that of PCRAM device using Ge 2 Sb 2 Te 5 films.

  1. Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Geenen, F.A., E-mail: Filip.Geenen@UGent.be [Ghent University, Department of Solid-State Sciences, Krijgslaan 281 (S1), 9000 Gent (Belgium); Knaepen, W.; De Keyser, K. [Ghent University, Department of Solid-State Sciences, Krijgslaan 281 (S1), 9000 Gent (Belgium); Opsomer, K. [Interuniversitair Micro-Electronica Centrum (IMEC), Kapeldreef 75, 3001 Leuven (Belgium); Vanmeirhaeghe, R.L. [Ghent University, Department of Solid-State Sciences, Krijgslaan 281 (S1), 9000 Gent (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown (United States); Detavernier, C. [Ghent University, Department of Solid-State Sciences, Krijgslaan 281 (S1), 9000 Gent (Belgium)

    2014-01-31

    The solid state reaction between 30 nm Pd films and various Ge substrates (Ge(100), Ge(111), polycrystalline Ge and amorphous Ge) was studied by means of in situ X-ray diffraction and in situ sheet resistance measurements. The reported phase sequence of Pd{sub 2}Ge followed by PdGe was verified on all substrates. The texture of the germanides was analysed by pole figure measurements on samples quenched in the Pd{sub 2}Ge and in the PdGe phase on both Ge(100) and (111) substrates. We report an epitaxial growth of Pd{sub 2}Ge on Ge(111) and on Ge(100). The formed PdGe has an axiotaxial alignment on Ge(111). On Ge(100), the axiotaxial texture is observed together with a fibre texture. The higher formation temperature of PdGe on Ge(111) could be related to the epitaxial alignment of the Pd{sub 2}Ge parent phase on Ge(111). - Highlights: • Solid-state reaction is studied on a Pd film with Ge substrates. • Pd2Ge grains have an epitaxial texture on both Ge 100 and Ge 111. • PdGe grains are found to grow with an axiotaxial texture. • Retarded PdGe formation on Ge111 is related with strong epitaxy of Pd2Ge.

  2. Thermal neutron imaging with rare-earth-ion-doped LiCaAlF{sub 6} scintillators and a sealed {sup 252}Cf source

    Energy Technology Data Exchange (ETDEWEB)

    Kawaguchi, Noriaki, E-mail: famicom@mail.tagen.tohoku.ac.jp [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fukuda, Kentaro; Suyama, Toshihisa [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579 (Japan)

    2011-10-01

    Thermal neutron imaging with Ce-doped LiCaAlF{sub 6} crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF{sub 6} scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF{sub 6} single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm{sup 2} was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The {sup 252}Cf source (<1 MBq) was sealed with 43 mm of polyethylene for neutron thermalization. Alphabet-shaped Cd pieces with a thickness of 2 mm were used as a mask for the thermal neutrons. After corrections for the pedestals and gain of each pixel, we successfully obtained two-dimensional neutron images using Ce-doped LiCaAlF{sub 6}.

  3. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    Science.gov (United States)

    Wang, Wei-Fu; Cheng, Kai-Yuan; Hsieh, Kuang-Chien

    2018-01-01

    Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS) profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3) along with diffused germanium donors whose concentration (>>1018/cm3) determined by electro-chemical capacitance-voltage (ECV) profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL) shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA) centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  4. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    Directory of Open Access Journals (Sweden)

    Wei-Fu Wang

    2018-01-01

    Full Text Available Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3 along with diffused germanium donors whose concentration (>>1018/cm3 determined by electro-chemical capacitance-voltage (ECV profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  5. Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

    Science.gov (United States)

    Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

    2017-11-01

    Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

  6. Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

    International Nuclear Information System (INIS)

    Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

    2008-01-01

    We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500-700 deg. C were applied to δ-doped layers encapsulated at 250 deg. C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited

  7. 2-μm optical time domain reflectometry measurements from novel Al-, Ge-, CaAlSi- doped and standard single-mode fibers

    Science.gov (United States)

    Rodriguez-Novelo, J. C.; Sanchez-Nieves, J. A.; Sierra-Calderon, A.; Sanchez-Lara, R.; Alvarez-Chavez, J. A.

    2017-08-01

    The development of novel Al-, Ge- doped and un-doped standard single mode fibers for future optical communication at 2μm requires the integration of, among other pieces of equipment, an optical time domain reflectometry (OTDR) technique for precise spectral attenuation characterization, including the well-known cut-back method. The integration of a state of the art OTDR at 2μm could provide valuable attenuation information from the aforementioned novel fibers. The proposed setup consists of a 1.7 mW, 1960nm pump source, a 30 dB gain Thulium doped fibre amplifier at 2μm, an 0.8mm focal length lens with a 0.5 NA, a 30 MHz acusto-optic modulator, a 3.1 focal length lens with a 0.68NA, an optical circulator at 2μm, an InGaAs photodetector for 1.2 nm-2.6 nm range, a voltage amplifier and an oscilloscope. The propagated pulse rate is 50 KHz, with 500 ns, 200 ns, 100 ns and 50 ns pulse widths. Attenuation versus novel fibers types for lengths ranging from 400- to 1000- meter samples were obtained using the proposed setup.

  8. Investigation of thermal quenching and abnormal thermal quenching in mixed valence Eu co-doped LaAlO{sub 3} phosphor

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jingjing [Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Zhao, Yang [China academy of civil aviation science and technology, Beijing 100028 (China); Mao, Zhiyong, E-mail: mzhy1984@163.com [Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Wang, Dajian [Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China); Bie, Lijian, E-mail: ljbie@tjut.edu.cn [Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2017-06-15

    Temperature dependent luminescence of mixed valence Eu co-doped LaAlO{sub 3} phosphors are deeply investigated in this work. Different temperature properties of Eu{sup 2+} and Eu{sup 3+} luminescence are observed as the phosphor excited by different incident light. Eu{sup 3+} luminescence shows normal thermal quenching when excited at 320 nm and abnormal thermal quenching as the excitation light changed into 365 nm, while Eu{sup 2+} luminescence exhibits a normal thermal quenching independent on the incident excitation lights. The origin of these novel normal/abnormal thermal quenching phenomena are analyzed and discussed by the excitation-emission processes in terms of the configuration coordinate model. The presented important experimental and analysis results give insights into the temperature properties of phosphors.

  9. Large optical second-order nonlinearity of poled WO3-TeO2 glass.

    Science.gov (United States)

    Tanaka, K; Narazaki, A; Hirao, K

    2000-02-15

    Second-harmonic generation, one of the second-order nonlinear optical properties of thermally and electrically poled WO>(3)-TeO>(2) glasses, has been examined. We poled glass samples with two thicknesses (0.60 and 0.86 mm) at various temperatures to explore the effects of external electric field strength and poling temperature on second-order nonlinearity. The dependence of second-harmonic intensity on the poling temperature is maximum at a specific poling temperature. A second-order nonlinear susceptibility of 2.1 pm/V was attained for the 0.60-mm-thick glass poled at 250 degrees C. This value is fairly large compared with those for poled silica and tellurite glasses reported thus far. We speculate that the large third-order nonlinear susceptibility of WO>(3)- TeO>(2) glasses gives rise to the large second-order nonlinearity by means of a X((2)) = 3X((3)) E(dc) process.

  10. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings

    DEFF Research Database (Denmark)

    Lu, Weifang; Li, Cheng; Lin, Guangyang

    2015-01-01

    Curled Ge nanobelts were fabricated by secondary oxidation of self-assembly SiGe rings, which were exfoliated from the SiGe stripes on the insulator. The Ge-rich SiGe stripes on insulator were formed by hololithography and modified Ge condensation processes of Si0.82Ge0.18 on SOI substrate. Ge...... nanobelts under a residual compressive strain of 2% were achieved, and the strain should be higher before partly releasing through bulge islands and breakage of the curled Ge nanobelts during the secondary oxidation process. The primary factor leading to compressive strain is thermal shrinkage of Ge...... nanobelts, which extrudes to Ge nanobelts in radial and tangent directions during the cooling process. This technique is promising for application in high-mobility Ge nano-scale transistors...

  11. Water activated doping and transport in multilayered germanane crystals

    International Nuclear Information System (INIS)

    Young, Justin R; Johnston-Halperin, Ezekiel; Chitara, Basant; Cultrara, Nicholas D; Arguilla, Maxx Q; Jiang, Shishi; Fan, Fan; Goldberger, Joshua E

    2016-01-01

    The synthesis of germanane (GeH) has opened the door for covalently functionalizable 2D materials in electronics. Herein, we demonstrate that GeH can be electronically doped by incorporating stoichiometric equivalents of phosphorus dopant atoms into the CaGe 2 precursor. The electronic properties of these doped materials show significant atmospheric sensitivity, and we observe a reduction in resistance by up to three orders of magnitude when doped samples are measured in water-containing atmospheres. This variation in resistance is a result of water activation of the phosphorus dopants. Transport measurements in different contact geometries show a significant anisotropy between in-plane and out-of-plane resistances, with a much larger out-of-plane resistance. These measurements along with finite element modeling results predict that the current distribution in top-contacted crystals is restricted to only the topmost, water activated crystal layers. Taken together, these results pave the way for future electronic and optoelectronic applications utilizing group IV graphane analogues. (paper)

  12. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Science.gov (United States)

    Lan, Chunfeng; Luo, Jingting; Lan, Huabin; Fan, Bo; Peng, Huanxin; Zhao, Jun; Sun, Huibin; Zheng, Zhuanghao; Liang, Guangxing; Fan, Ping

    2018-01-01

    We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE) increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc), short-circuit current (Jsc) and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells. PMID:29495612

  13. Enhanced Charge Extraction of Li-Doped TiO2 for Efficient Thermal-Evaporated Sb2S3 Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Chunfeng Lan

    2018-02-01

    Full Text Available We provided a new method to improve the efficiency of Sb2S3 thin film solar cells. The TiO2 electron transport layers were doped by lithium to improve their charge extraction properties for the thermal-evaporated Sb2S3 solar cells. The Mott-Schottky curves suggested a change of energy band and faster charge transport in the Li-doped TiO2 films. Compared with the undoped TiO2, Li-doped mesoporous TiO2 dramatically improved the photo-voltaic performance of the thermal-evaporated Sb2S3 thin film solar cells, with the average power conversion efficiency (PCE increasing from 1.79% to 4.03%, as well as the improved open-voltage (Voc, short-circuit current (Jsc and fill factors. The best device based on Li-doped TiO2 achieved a power conversion efficiency up to 4.42% as well as a Voc of 0.645 V, which are the highest values among the reported thermal-evaporated Sb2S3 solar cells. This study showed that Li-doping on TiO2 can effectively enhance the charge extraction properties of electron transport layers, offering a new strategy to improve the efficiency of Sb2S3-based solar cells.

  14. Spectroscopic properties and thermal stability of Er3+-doped tungsten-tellurite glass for waveguide amplifier application

    International Nuclear Information System (INIS)

    Zhao Shilong; Wang Xiuli; Fang Dawei; Xu Shiqing; Hu Lili

    2006-01-01

    Tungsten-tellurite glass with molar composition of 60TeO 2 -30WO 3 -10Na 2 O has been investigated for developing planar broadband waveguide amplifier application. Spectroscopic properties and thermal stability of Er 3+ -doped tungsten-tellurite glass have been discussed. The results show that the introduction of WO 3 increases significantly the glass transition temperature and the maximum phonon energy. Er 3+ -doped tungsten-tellurite glass exhibits high glass transition temperature (377 deg. C), large emission cross-section (0.91 x 10 -20 cm 2 ) at 1532 nm and broad full width at half maximum (FWHM), which make it preferable for broadband Er 3+ -doped waveguide amplifier application

  15. Thermal spin filtering effect and giant magnetoresistance of half-metallic graphene nanoribbon co-doped with non-metallic Nitrogen and Boron

    Science.gov (United States)

    Huang, Hai; Zheng, Anmin; Gao, Guoying; Yao, Kailun

    2018-03-01

    Ab initio calculations based on density functional theory and non-equilibrium Green's function are performed to investigate the thermal spin transport properties of single-hydrogen-saturated zigzag graphene nanoribbon co-doped with non-metallic Nitrogen and Boron in parallel and anti-parallel spin configurations. The results show that the doped graphene nanoribbon is a full half-metal. The two-probe system based on the doped graphene nanoribbon exhibits various excellent spin transport properties, including the spin-filtering effect, the spin Seebeck effect, the single-spin negative differential thermal resistance effect and the sign-reversible giant magnetoresistance feature. Excellently, the spin-filtering efficiency can reach nearly 100% in the parallel configuration and the magnetoresistance ratio can be up to -1.5 × 1010% by modulating the electrode temperature and temperature gradient. Our findings indicate that the metal-free doped graphene nanoribbon would be a promising candidate for spin caloritronic applications.

  16. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M., E-mail: mmoreno@inaoep.mx [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Delgadillo, N. [Universidad Autónoma de Tlaxcala, Av. Universidad No. 1, Z. P. 90006 Tlaxcala (Mexico); Torres, A. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico); Ambrosio, R. [Technology and Engineering Institute, Ciudad Juarez University UACJ, Av. Del Charro 450N, Z. P. 32310 Chihuahua (Mexico); Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W. [National Institute of Astrophysics, Optics and Electronics, INAOE, P.O. Box 51 and 216, Puebla, Z. P. 72840 Puebla (Mexico)

    2013-12-02

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E{sub a}) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ{sub RT}), E{sub a} and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E{sub a}, TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors.

  17. Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications

    International Nuclear Information System (INIS)

    Moreno, M.; Delgadillo, N.; Torres, A.; Ambrosio, R.; Rosales, P.; Kosarev, A.; Reyes-Betanzo, C.; Hidalga-Wade, J. de la; Zuniga, C.; Calleja, W.

    2013-01-01

    In this work we have studied boron doping of hydrogenated amorphous germanium a-Ge:H and polymorphous germanium (pm-Ge:H) in low regimes, in order to compensate the material from n-type (due to oxygen contamination that commonly occurs during plasma deposition) to intrinsic, and in this manner improve the properties that are important for infrared (IR) detection, as activation energy (E a ) and temperature coefficient of resistance (TCR). Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (σ RT ), E a and current–voltage characteristics under IR radiation were performed in the compensated a-Ge:H and pm-Ge:H films. Our results demonstrate that, effectively, the values of E a , TCR and IR detection are improved on the a-Ge:H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. - Highlights: • We reported boron doping compensation of amorphous and polymorphous germanium. • The films were deposited by plasma enhanced chemical vapor deposition. • The aim is to use the films as thermo-sensing elements in un-cooled microbolometers. • Those films have advantages over boron doped a-Si:H used in commercial detectors

  18. Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 °C

    Science.gov (United States)

    Um, Jae Gwang; Jang, Jin

    2018-04-01

    We report the electrical properties and thermal stability of heavily doped, amorphous indium-gallium-zinc-oxide (a-IGZO) treated with fluorine (F) plasma. When the F doping concentration in a-IGZO is 17.51 × 1021/cm-3, the a-IGZO exhibits a carrier concentration of 6 × 1019 cm-3, a resistivity of 3 × 10-3 Ω cm, and a Hall mobility of 20 cm2/V s. This indicates that F is a suitable n-type dopant in a-IGZO. The similarity of the ionic radius of F to that of oxygen (O) allows substitutional doping by replacing O with F or the occupation of the oxygen vacancy (VO) site by F and consequent reduction in defect density. The semiconducting property of a-IGZO can change into metallic behavior by F doping. The defect passivation by F incorporation is confirmed by the XPS depth profile, which reveals the significant reduction in the VO concentration due to the formation of In-F bonds. The heavily doped a-IGZO exhibits thermally stable conductivity up to 600 °C annealing and thus can be widely used for the ohmic contact of a-IGZO devices.

  19. Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

    Directory of Open Access Journals (Sweden)

    Saharin Nurul Syazlin Binti

    2017-01-01

    Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

  20. Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures.

    Science.gov (United States)

    Nogales, E; Hidalgo, P; Lorenz, K; Méndez, B; Piqueras, J; Alves, E

    2011-07-15

    Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga(2)O(3) and GeO(2) structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the (5)D(0)-(7)F(2) Eu(3+) intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga(2)O(3), which is assigned to the lattice recovery. Gd(3+) as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd(3+) is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd(3+) (6)P(7/2)-(8)S(7/2) intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

  1. Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures

    International Nuclear Information System (INIS)

    Nogales, E; Hidalgo, P; Mendez, B; Piqueras, J; Lorenz, K; Alves, E

    2011-01-01

    Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by a thermal evaporation method and were subsequently doped with gadolinium or europium ions by ion implantation. No significant changes in the morphologies of the nanostructures were observed after ion implantation and thermal annealing. The luminescence emission properties have been studied with cathodoluminescence (CL) in a scanning electron microscope (SEM). Both β-Ga 2 O 3 and GeO 2 structures implanted with Eu show the characteristic red luminescence peak centered at around 610 nm, due to the 5 D 0 - 7 F 2 Eu 3+ intraionic transition. Sharpening of the luminescence peaks after thermal annealing is observed in Eu implanted β-Ga 2 O 3 , which is assigned to the lattice recovery. Gd 3+ as-implanted samples do not show rare earth related luminescence. After annealing, optical activation of Gd 3+ is obtained in both matrices and a sharp ultraviolet peak centered at around 315 nm, associated with the Gd 3+ 6 P 7/2 - 8 S 7/2 intraionic transition, is observed. The influence of the Gd ion implantation and the annealing temperature on the gallium oxide broad intrinsic defect band has been analyzed.

  2. Magnet pole tips

    Science.gov (United States)

    Thorn, Craig E.; Chasman, Chellis; Baltz, Anthony J.

    1984-04-24

    An improved magnet which more easily provides a radially increasing magnetic field, as well as reduced fringe field and requires less power for a given field intensity. The subject invention comprises a pair of spaced, opposed magnetic poles which further comprise a pair of pole roots, each having a pole tip attached to its center. The pole tips define the gap between the magnetic poles and at least a portion of each pole tip is separated from its associated pole root. The separation begins at a predetermined distance from the center of the pole root and increases with increasing radial distance while being constant with azimuth within that portion. Magnets in accordance with the subject invention have been found to be particularly advantageous for use in large isochronous cyclotrons.

  3. Growth and Characterization of Indium Doped ZnO Nano wires Using Thermal Evaporation Method

    International Nuclear Information System (INIS)

    Abrar Ismardi; Dee, C.F.; Majlis, B.Y.

    2011-01-01

    Indium doped ZnO nano wires were grown on silicon substrate using vapor thermal deposition method without using any catalyst. Morphological structures were extensively investigated using field emission scanning electron microscopy (FESEM) and show that the nano wires have uniformly hexagonal nano structures with diameters less than 100 nm and lengths from one to a few microns. The sample was measured for elemental composition with energy dispersive X-ray (EDX) spectroscopy, Zn, In and O elements were found on the sample. XRD spectrum of indium doped ZnO nano wires revealed that the nano wires have a high crystalline structure. (author)

  4. Basic thermal–mechanical properties and thermal shock, fatigue resistance of swaged + rolled potassium doped tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiaoxin; Yan, Qingzhi, E-mail: qzyan@ustb.edu.cn; Lang, Shaoting; Xia, Min; Ge, Changchun

    2014-09-15

    Highlights: • The potassium doped tungsten grade was achieved via swaging + rolling process. • The cracking threshold of the W–K alloy was in the range of 0.44–0.66 GW/m{sup 2}. • Recrystallization occurred at 0.66–1.1 GW/m{sup 2} during the thermal shock tests. • No cracks emerged during the thermal fatigue tests (0.44 GW/m{sup 2}, 1000 cycles). • Recrystallization occurred after 1000 cycles during the thermal fatigue tests. - Abstract: The potassium doped tungsten (W–K) grade was achieved via swaging + rolling process. The swaged + rolled W–K alloy exhibited acceptable thermal conductivity of 159.1 W/m K and ductile-to-brittle transition temperature of about 873 K while inferior mechanical properties attributed to the coarse pores and small deformation degree. Then the thermal shock, fatigue resistance of the W–K grade were characterized by an electron beam facility. Thermal shock tests were conducted at absorbed power densities varied from 0.22 to 1.1 GW/m{sup 2} in a step of 0.22 GW/m{sup 2}. The cracking threshold was in the range of 0.44–0.66 GW/m{sup 2}. Furthermore, recrystallization occurred in the subsurface of the specimens tested at 0.66–1.1 GW/m{sup 2} basing on the analysis of microhardness and microstructure. Thermal fatigue tests were performed at 0.44 GW/m{sup 2} up to 1000 cycles and no cracks emerged throughout the tests. Moreover, recrystallization occurred after 1000 cycles.

  5. The PTB thermal neutron reference field at GeNF

    International Nuclear Information System (INIS)

    Boettger, R.; Friedrich, H.; Janssen, H.

    2004-01-01

    The experimental setup and procedure for the characterization of the thermal neutron reference field established at the Geesthacht neutron facility (GeNF) of the GKSS is described. The neutron beam, free in air, with a maximum flux of 10 6 s -1 , can easily be reduced to less than 10 4 s -1 by using a diaphragm variable in size and without changing the beam divergence. Also, the spectral distribution with a mean energy of 45 meV, measured by time-of-flight over a 6.6 m long flight path, is independent of the beam current chosen. In the 2002/2003 experiments reported here, a 6 Li glass detector was employed to determine the absolute beam current and to calibrate the 3 He transmission beam monitor. In addition, activation measurements of gold foils were carried out at a reduced beam divergence. The results agree within ±2%. Furthermore, the beam is characterized by a low gamma background intensity and a negligible fraction of epithermal neutrons. Irradiations in combination with a scanner device to achieve a homogeneously illuminated scan field have shown that the thermal beam is well suited for dosemeter development and for the calibration of radiation protection instruments. (orig.)

  6. The PTB thermal neutron reference field at GeNF

    Energy Technology Data Exchange (ETDEWEB)

    Boettger, R.; Friedrich, H.; Janssen, H.

    2004-07-01

    The experimental setup and procedure for the characterization of the thermal neutron reference field established at the Geesthacht neutron facility (GeNF) of the GKSS is described. The neutron beam, free in air, with a maximum flux of 10{sup 6} s{sup -1}, can easily be reduced to less than 10{sup 4} s{sup -1} by using a diaphragm variable in size and without changing the beam divergence. Also, the spectral distribution with a mean energy of 45 meV, measured by time-of-flight over a 6.6 m long flight path, is independent of the beam current chosen. In the 2002/2003 experiments reported here, a {sup 6}Li glass detector was employed to determine the absolute beam current and to calibrate the {sup 3}He transmission beam monitor. In addition, activation measurements of gold foils were carried out at a reduced beam divergence. The results agree within {+-}2%. Furthermore, the beam is characterized by a low gamma background intensity and a negligible fraction of epithermal neutrons. Irradiations in combination with a scanner device to achieve a homogeneously illuminated scan field have shown that the thermal beam is well suited for dosemeter development and for the calibration of radiation protection instruments. (orig.)

  7. Mn doped GaN nanoparticles synthesized by rapid thermal treatment in ammonia

    International Nuclear Information System (INIS)

    Šimek, P.; Sedmidubský, D.; Huber, Š.; Klímová, K.; Maryško, M.; Mikulics, M.; Sofer, Z.

    2015-01-01

    We present a novel route for the synthesis of manganese doped GaN nanoparticles. Nanoparticles in the form of hexagonal discs were synthesized by rapid thermal treatment of manganese doped ammonium hexafluorogallate in ammonium atmosphere. The morphology of GaN:Mn nanoparticles was investigated using scanning electron microscopy. A concentration over 0.7 wt.% of Mn was observed by X-ray fluorescence and electron microprobe. Structural and electronic properties were investigated using X-ray diffraction, Raman spectroscopy and micro-photoluminescence with excitation wavelength of 325 nm and 532 nm. The magnetic properties between 4.5 K and 300 K were investigated by a superconducting quantum interference device (SQUID) magnetometer. GaN:Mn nanoparticles show a purely paramagnetic behavior which can be interpreted in terms of Mn 2+ ions exhibiting an antiferromagnetic interaction. - Highlights: • A new method for the synthesis of Mn doped GaN nanoparticles. • GaN:Mn nanoparticles form hexagonal discs. • None ferromagnetic ordering observed in GaN:Mn nanoparticles. • The concentration of Mn in GaN:Mn nanoparticles reach up to 0.8 wt.%

  8. Thermal stability of atom configurations around Er atoms doped in InP by OMVPE

    International Nuclear Information System (INIS)

    Ofuchi, Hironori; Ito, Takashi; Kawamoto, Takeshi; Tabuchi, Masao; Fujiwara, Yasufumi; Takeda, Yoshikazu

    1999-01-01

    It has been found that there is a threshold growth temperature between 550 deg C and 580 deg C for the change of local structure around Er atoms in InP doped Er atoms grown by organometallic vapor phase epitaxy (OMVPE). To understand whether the structure change is induced at the growing surface or during the growth as an in situ annealing, the thermal stability of the local structures around the Er atoms doped in InP by the OMVPE at 530 deg C has been investigated by the extended X-ray absorption fine structure (EXAFS). The EXAFS analysis revealed that the local structure around the Er atoms, which existed substitutionally on In sites in the InP lattice, was stable against the post-growth annealing even for 1 h at 650 deg C. Therefore, it is concluded that the local structures are formed on the growth front, and not in the volume of InP by thermal annealing during or after the growth. (author)

  9. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  10. Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence

    International Nuclear Information System (INIS)

    Reed, M.L.; Reed, M.J.; Jagannadham, K.; Verghese, K.; Bedair, S.M.; El-Masry, N.; Butler, J.E.

    2004-01-01

    A sample of 10 B isotope doped diamond was neutron irradiated to a thermal fluence of 1.3x10 19 neutron cm -2 . The diamond sample was cooled continuously during irradiation in a nuclear reactor. 7 Li is formed by nuclear transmutation reaction from 10 B. Characterization for electrical conductance in the temperature range of 160 K 10 B doped sample and the 10 B doped and irradiated sample. The unirradiated diamond sample showed p-type conductance at higher temperature (T>200 K) and p-type surface conductance at lower temperature (T 7 Li that is formed by nuclear transmutation reaction from 10 B atoms. Also, compensation of n-type carriers from 7 Li by p-type carriers from 10 B is used to interpret the conductance above 400 K. A low concentration of radiation induced defects, absence of defect complexes, and the low activation energy of n-type 7 Li are thought responsible for the observed variation of conductance in the irradiated diamond. The present results illustrate that neutron transmutation from 10 B doped diamond is a useful method to achieve n-type conductivity in diamond

  11. Fibreglass as an alternative to wood poles : Transmission and distribution poles and crossarms : use of fiber reinforced composite materials for overhead electric utility lines

    Energy Technology Data Exchange (ETDEWEB)

    Wiles, J.R. [Shakespeare Composites and Electronics, Newberry, SC (United States)

    2002-07-01

    For over thirty years, Shakespeare Composites and Electronics has manufactured fiberglass composite lighting and utility poles, as well as being the number one maker of composite crossarms. Composite poles have a few advantages, such as being lightweight, they do no rust, are woodpecker and termite resistant, use no harmful chemicals, and have long life. A chart displaying the comparative pole weights is presented. The key design factors of fiberglass composite utility poles are: pole diameter, fiberglass type and wind angle, layers (thickness) of fiberglass, resin type and formulation, resin mix consistency, cure cycle and maximum curing temperature, and others. Two charts were also displayed presenting 40 feet class 4 pole bending strengths and 40 feet class 2 pole bending strengths. The author indicated that composite poles have a better strength consistency than wood, while being as consistent as steel and prestressed concrete. The design is based on an overload factor of safety of 2.5 for numerous installations. Some of the analytical methods used include mechanical testing, finite element modeling, and thermal analysis. The author describes in detail the concerns associated with attachments. Coating consists of a system of ultra violet blockers in the resin followed by an added resin rich polyester veil outer surface. In addition, there is a proprietary coating process with additional ultra violet blockers. Quality control is effected at the plant. The weathering system lasts 80 years. figs.

  12. A comprehensive analysis about thermal conductivity of multi-layer graphene with N-doping, -CH3 group, and single vacancy

    Science.gov (United States)

    Si, Chao; Li, Liang; Lu, Gui; Cao, Bing-Yang; Wang, Xiao-Dong; Fan, Zhen; Feng, Zhi-Hai

    2018-04-01

    Graphene has received great attention due to its fascinating thermal properties. The inevitable defects in graphene, such as single vacancy, doping, and functional group, greatly affect the thermal conductivity. The sole effect of these defects on the thermal conductivity has been widely studied, while the mechanisms of the coupling effects are still open. We studied the combined effect of defects with N-doping, the -CH3 group, and single vacancy on the thermal conductivity of multi-layer graphene at various temperatures using equilibrium molecular dynamics with the Green-Kubo theory. The Taguchi orthogonal algorithm is used to evaluate the sensitivity of N-doping, the -CH3 group, and single vacancy. Sole factor analysis shows that the effect of single vacancy on thermal conductivity is always the strongest at 300 K, 700 K, and 1500 K. However, for the graphene with three defects, the single vacancy defect only plays a significant role in the thermal conductivity modification at 300 K and 700 K, while the -CH3 group dominates the thermal conductivity reduction at 1500 K. The phonon dispersion is calculated using a spectral energy density approach to explain such a temperature dependence. The combined effect of the three defects further decreases the thermal conductivity compared to any sole defect at both 300 K and 700 K. The weaker single vacancy effect is due to the stronger Umklapp scattering at 1500 K, at which the combined effect seriously covers almost all the energy gaps in the phonon dispersion relation, significantly reducing the phonon lifetimes. Therefore, the temperature dependence only appears on the multi-layer graphene with combined defects.

  13. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

    KAUST Repository

    Dong, Y.

    2014-07-26

    Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.

  14. Thermal barrier coating by electron beam-physical vapor deposition of zirconia co-doped with yttria and niobia

    Directory of Open Access Journals (Sweden)

    Daniel Soares de Almeida

    2010-08-01

    Full Text Available The most usual ceramic material for coating turbine blades is yttria doped zirconia. Addition of niobia, as a co-dopant in the Y2O3-ZrO2 system, can reduce the thermal conductivity and improve mechanical properties of the coating. The purpose of this work was to evaluate the influence of the addition of niobia on the microstructure and thermal properties of the ceramic coatings. SEM on coatings fractured cross-section shows a columnar structure and the results of XRD show only zirconia tetragonal phase in the ceramic coating for the chemical composition range studied. As the difference NbO2,5-YO1,5 mol percent increases, the tetragonality increases. A significant reduction of the thermal conductivity, measured by laser flash technique in the zirconia coating co-doped with yttria and niobia when compared with zirconia-yttria coating was observed.

  15. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    Science.gov (United States)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  16. Effect of B, N, Ge, Sn, K doping on electronic-transport properties of (5, 0) zigzag carbon nanotube

    Science.gov (United States)

    Kamalian, Monir; Seyed Jalili, Yousef; Abbasi, Afshin

    2018-04-01

    In this paper the effect of impurity on the electronic properties and quantum conductance of zigzag (5, 0) carbon nanotube have been studied by using the Density Functional Theory (DFT) combined with Non-Equilibrium Green’s Function (NEGF) formalism with TranSIESTA software. The effect of Boron (B), Nitrogen (N), Germanium (Ge), Tin (Sn) and Potassium (K) impurities on the CNT conduction behavior and physical characteristics, like density of states (DOS), band structure, transmission coefficients and quantum conductance was considered and discussed simultaneously. The current‑voltage (I‑V) curves of all the proposed models were studied for comparative study under low-bias conditions. The distinct changes in conductance reported as the positions, number and type of dopants was varied in central region of the CNT between two electrodes at different bias voltages. This suggested conductance enhancement mechanism for the charge transport in the doped CNT at different positions is important for the design of CNT based nanoelectronic devices. The results show that Germanium, Tin and Potassium dopant atoms has increased the conductance of the model manifold than other doping atoms furthermore 10 Boron and 10 Nitrogen dopant atoms showed the amazing property of Negative Differential Resistance (NDR).

  17. Surface segregation of Ge during Si growth on Ge/Si(0 0 1) at low temperature observed by high-resolution RBS

    International Nuclear Information System (INIS)

    Nakajima, K.; Hosaka, N.; Hattori, T.; Kimura, K.

    2002-01-01

    The Si/Ge/Si(0 0 1) multilayer with about 1 ML Ge layer is fabricated by evaporating Si overlayer on a Ge/Si(0 0 1) surface at 20-300 deg. C. The depth profile of the Ge atoms is observed by high-resolution Rutherford backscattering spectroscopy to investigate the possibility of Ge delta doping in Si. The observed profile of the Ge atoms spreads over several atomic layers even at 20 deg. C and a significant amount of Ge is located in the surface layer at higher temperatures. The results at 20-150 deg. C are well explained with two-layer model for surface segregation of the Ge atoms and the segregation rates are estimated. The activation energy for surface segregation of Ge atoms in amorphous Si is evaluated to be 0.035 eV, which is much smaller than the value reported for Si deposition at 500 deg. C. The small activation energy suggests that local heating during the Si deposition is dominant at low temperature

  18. On the difference between the pole and the MS masses of the top quark at the electroweak scale

    Energy Technology Data Exchange (ETDEWEB)

    Jegerlehner, Fred [Humboldt-Universitaet, Berlin (Germany). Inst. fuer Physik; Deutsches Elektronen-Synchrotron (DESY), Zeuthen (Germany); Kalmykov, Mikhail Yu.; Kniehl, Bernd A. [Hamburg Univ. (Germany). 2. Inst. fuer Theoretische Physik

    2012-12-15

    We argue that for a Higgs boson mass M{sub H} {proportional_to} 125 GeV, as estimated from recent Higgs searches at the LHC, the inclusion of the electroweak radiative corrections in the relationship between the pole and MS masses of the top quark reduces the difference to about 1 GeV. This fact is relevant for the scheme dependence of electroweak observables as well as for the extraction of the top quark mass from experimental data.

  19. Improved thermal stability of methylsilicone resins by compositing with N-doped graphene oxide/Co3O4 nanoparticles

    International Nuclear Information System (INIS)

    Jiang, Bo; Zhao, Liwei; Guo, Jiang; Yan, Xingru; Ding, Daowei; Zhu, Changcheng; Huang, Yudong; Guo, Zhanhu

    2016-01-01

    Nanoparticles play important roles in enhancing the thermal-resistance of hosting polymer resins. Despite tremendous efforts, developing thermally stable methylsilicone resin at high temperatures is still a challenge. Herein, we report a strategy to increase the activation energy to slow down the decomposition/degradation of methylsilicone resin using synergistic effects between the Co 3 O 4 nanoparticles and the nitrogen doped graphene oxide. The N-doped graphene oxides composited with Co 3 O 4 nanoparticles were prepared by hydrolysis of cobalt nitrate hexahydrate in the presence of graphene oxide and were incorporated into the methylsilicone resin. Two-stage decompositions were observed, i.e., 200–300 and 400–500 °C. The activation energy for the low temperature region was enhanced by 47.117 kJ/mol (vs. 57.76 kJ/mol for pure resin). The enhanced thermal stability was due to the fact that the nanofillers prevented the silicone hydroxyl chain ends ‘‘biting’’ to delay the degradation. The activation energy for high-temperature region was enhanced by 11.585 kJ/mol (vs. 171.95 kJ/mol for pure resin). The nanofillers formed a protective layer to isolate oxygen from the hosting resin. The mechanism for the enhanced thermal stability through prohibited degradation with synergism of these nitrogen-doped graphene oxide nanocomposites was proposed as well.Graphical Abstract

  20. Selective growth of Ge nanowires by low-temperature thermal evaporation.

    Science.gov (United States)

    Sutter, Eli; Ozturk, Birol; Sutter, Peter

    2008-10-29

    High-quality single-crystalline Ge nanowires with electrical properties comparable to those of bulk Ge have been synthesized by vapor-liquid-solid growth using Au growth seeds on SiO(2)/Si(100) substrates and evaporation from solid Ge powder in a low-temperature process at crucible temperatures down to 700 °C. High nanowire growth rates at these low source temperatures have been identified as being due to sublimation of GeO from substantial amounts of GeO(2) on the powder. The Ge nanowire synthesis from GeO is highly selective at our substrate temperatures (420-500 °C), i.e., occurs only on Au vapor-liquid-solid growth seeds. For growth of nanowires of 10-20 µm length on Au particles, an upper bound of 0.5 nm Ge deposition was determined in areas of bare SiO(2)/Si substrate without Au nanoparticles.

  1. Thermal transport properties of polycrystalline tin-doped indium oxide films

    International Nuclear Information System (INIS)

    Ashida, Toru; Miyamura, Amica; Oka, Nobuto; Sato, Yasushi; Shigesato, Yuzo; Yagi, Takashi; Taketoshi, Naoyuki; Baba, Tetsuya

    2009-01-01

    Thermal diffusivity of polycrystalline tin-doped indium oxide (ITO) films with a thickness of 200 nm has been characterized quantitatively by subnanosecond laser pulse irradiation and thermoreflectance measurement. ITO films sandwiched by molybdenum (Mo) films were prepared on a fused silica substrate by dc magnetron sputtering using an oxide ceramic ITO target (90 wt %In 2 O 3 and 10 wt %SnO 2 ). The resistivity and carrier density of the ITO films ranged from 2.9x10 -4 to 3.2x10 -3 Ω cm and from 1.9x10 20 to 1.2x10 21 cm -3 , respectively. The thermal diffusivity of the ITO films was (1.5-2.2)x10 -6 m 2 /s, depending on the electrical conductivity. The thermal conductivity carried by free electrons was estimated using the Wiedemann-Franz law. The phonon contribution to the heat transfer in ITO films with various resistivities was found to be almost constant (λ ph =3.95 W/m K), which was about twice that for amorphous indium zinc oxide films

  2. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  3. Fabrication of prototypes of Ge(li) semiconductor detector

    International Nuclear Information System (INIS)

    Santos, W.M.S.; Marti, G.V.; Rizzo, P.; Barros, S. de.

    1987-01-01

    The fabrication process of Ge(Li) semiconductor detector prototypes, from specific chemical treatments of doped monocrystal with receptor impurities (p + semicondutor) is presented. The detector characteristics, such as resulotion and operation tension are shown. (M.C.K.) [pt

  4. Lattice thermal expansion and solubility limits of neodymium-doped ceria

    International Nuclear Information System (INIS)

    Zhang, Jinhua; Ke, Changming; Wu, Hongdan; Yu, Jishun; Wang, Jingran

    2016-01-01

    Nd x Ce 1−x O 2−0.5x (x=0–1.0) powders were prepared by reverse coprecipitation-calcination method and characterized by XRD. The crystal structure of product powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value. An empirical equation simulating the lattice parameter of neodymium doped ceria was established based on the experimental data. The lattice parameters of the fluorite structure solid solutions increased with extensive adoption of Nd 3+ , and the heating temperature going up. The average thermal expansion coefficients of neodymium doped ceria with fluorite structure are higher than 13.5×10 −6 °C −1 from room temperature to 1200 °C. - Graphical abstract: The crystal structure of Nd x Ce 1−x O 2−0.5x (x=0–1.0) powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value.

  5. Sulfur-doped graphene via thermal exfoliation of graphite oxide in H2S, SO2, or CS2 gas.

    Science.gov (United States)

    Poh, Hwee Ling; Šimek, Petr; Sofer, Zdeněk; Pumera, Martin

    2013-06-25

    Doping of graphene with heteroatoms is an effective way to tailor its properties. Here we describe a simple and scalable method of doping graphene lattice with sulfur atoms during the thermal exfoliation process of graphite oxides. The graphite oxides were first prepared by Staudenmaier, Hofmann, and Hummers methods followed by treatments in hydrogen sulfide, sulfur dioxide, or carbon disulfide. The doped materials were characterized by scanning electron microscopy, high-resolution X-ray photoelectron spectroscopy, combustible elemental analysis, and Raman spectroscopy. The ζ-potential and conductivity of sulfur-doped graphenes were also investigated in this paper. It was found that the level of doping is more dramatically influenced by the type of graphite oxide used rather than the type of sulfur-containing gas used during exfoliation. Resulting sulfur-doped graphenes act as metal-free electrocatalysts for an oxygen reduction reaction.

  6. Low-temperature photoluminescence in chalcogenide glasses doped with rare-earth ions

    Energy Technology Data Exchange (ETDEWEB)

    Kostka, Petr, E-mail: petr.kostka@irsm.cas.cz [Institute of Rock Structure and Mechanics AS CR, V Holešovičkách 41, 182 09 Praha 8 (Czech Republic); Zavadil, Jiří [Institute of Photonics and Electronics AS CR, Chaberská 57, 182 51 Praha 8, Kobylisy (Czech Republic); Iovu, Mihail S. [Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 5, MD-28 Chisinau, Republic of Moldova (Moldova, Republic of); Ivanova, Zoya G. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Furniss, David; Seddon, Angela B. [Mid-Infrared Photonics Group, George Green Institute for Electromagnetics Research, University of Nottingham, University Park, Nottingham NG7 2RD (United Kingdom)

    2015-11-05

    Sulfide and oxysulfide bulk glasses Ga-La-S-O, Ge-Ga-S and Ge-Ga-As-S doped, or co-doped, with various rare-earth (RE{sup 3+}) ions are investigated for their room temperature transmission and low-temperature photoluminescence. Photoluminescence spectra are collected by using external excitation into the Urbach tail of the fundamental absorption edge of the host-glass. The low-temperature photoluminescence spectra are dominated by the broad-band luminescence of the host glass, with superimposed relatively sharp emission bands due to radiative transitions within 4f shells of RE{sup 3+} ions. In addition, the dips in the host-glass luminescence due to 4f-4f up-transitions of RE{sup 3+} ions are observed in the Ge-Ga-S and Ge-Ga-As-S systems. These superimposed narrow effects provide a direct experimental evidence of energy transfer between the host glass and respective RE{sup 3+} dopants. - Highlights: • An evidence of energy transfer from host-glass to doped-in RE ions is presented. • Energy transfer is manifested by dips in host-glass broad-band luminescence. • This channel of energy transfer is documented on selected RE doped sulfide glasses. • Photoluminescence spectra are dominated by broad band host-glass luminescence. • Presence of RE ions is manifested by superimposed narrow 4f-4f transitions.

  7. Reddish-orange, neutral and warm white emissions in Eu3+, Dy3+ and Dy3+/Eu3+ doped CdO-GeO2-TeO2 glasses

    Science.gov (United States)

    Rodríguez-Carvajal, David A.; Meza-Rocha, A. N.; Caldiño, U.; Lozada-Morales, R.; Álvarez, E.; Zayas, Ma. E.

    2016-11-01

    Eu3+, Dy3+ and Dy3+/Eu3+ doped CdO-GeO2-TeO2 glasses were prepared using the melt-quenching process and analyzed by X-diffraction, Raman spectroscopy, excitation and emission spectra, and emission decay time profiles. The lack of X ray diffraction peaks revealed that all samples are amorphous. Vibrational modes associated with Tesbnd Osbnd Te and Gesbnd Osbnd Ge related bonds and molecular oxygen were detected by Raman spectroscopy. The luminescence characteristics were studied upon excitations that correspond with the emission of InGaN (370-420 nm) based LEDs. The Eu3+ singly doped glass displayed reddish-orange global emission, with x = 0.601 and y = 0.349 CIE1931 chromaticity coordinates, upon 393 nm excitation. Neutral emission with x = 0.373 and y = 0.412 CIE1931 chromaticity coordinates and correlated color temperature (CCT) of 4400 K, was achieved in the Dy3+ singly doped glass excited at 388 nm. The Dy3+/Eu3+ co-doped glass exhibited warm, neutral and soft warm white emissions with CCT values of 3435, 4153 and 2740 K, under excitations at 382, 388 and 393 nm, respectively, depending mainly on the Dy3+ and Eu3+ relative excitation. The Dy3+ excitation bands observed in the Dy3+/Eu3+ glass by monitoring the 611 nm Eu3+ emission, suggest that Dy3+ → Eu3+ energy transfer takes place, despite the fact that the Dy3+ emission decays in the Dy3+ and Dy3+/Eu3+ doped glass, remain without changes. The shortening of Eu3+ decay in presence of Dy3+ was attributed to an Eu3+ → Dy3+ non-radiative energy transfer process, which according with the Inokuti-Hirayama model might be dominated through an electric quadrupole-quadrupole interaction, with efficiency and probability of 5.5% and 51.6 s-1, respectively.

  8. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  9. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    International Nuclear Information System (INIS)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel; Mondiali, Valeria; Isella, Giovanni; Bollani, Monica

    2014-01-01

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  10. Introduction of performance boosters like Ge as channel material for the future of CMOS

    Energy Technology Data Exchange (ETDEWEB)

    Samia, Slimani, E-mail: slimani.samia@gmail.com [Faculty of Electrical and Computer Engineering Mouloud Mammeri University (UMMTO), BP 17 RP 15000, Tizi-Ouzou (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria); Bouaza, Djellouli, E-mail: djelbou@hotmail.fr [University of Saida, Department of Electronic (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria)

    2016-06-10

    High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.

  11. Micromachined single-level nonplanar polycrystalline SiGe thermal microemitters for infrared dynamic scene projection

    Science.gov (United States)

    Malyutenko, V. K.; Malyutenko, O. Yu.; Leonov, V.; Van Hoof, C.

    2009-05-01

    The technology for self-supported membraneless polycrystalline SiGe thermal microemitters, their design, and performance are presented. The 128-element arrays with a fill factor of 88% and a 2.5-μm-thick resonant cavity have been grown by low-pressure chemical vapor deposition and fabricated using surface micromachining technology. The 200-nm-thick 60×60 μm2 emitting pixels enforced with a U-shape profile pattern demonstrate a thermal time constant of 2-7 ms and an apparent temperature of 700 K in the 3-5 and 8-12 μm atmospheric transparency windows. The application of the devices to the infrared dynamic scene simulation and their benefit over conventional planar membrane-supported emitters are discussed.

  12. First-principles study of nitrogen doping in cubic and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5}

    Energy Technology Data Exchange (ETDEWEB)

    Caravati, S; Mazzarello, R; Kuehne, T D; Parrinello, M [Computational Science, Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Via Giuseppe Buffi 13, CH-6900 Lugano (Switzerland); Colleoni, D; Bernasconi, M [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via R Cozzi 53, I-20125 Milano (Italy); Krack, M [Paul Scherrer Institut, CH-5232 Villigen (Switzerland)

    2011-07-06

    We investigated the structural, electronic and vibrational properties of amorphous and cubic Ge{sub 2}Sb{sub 2}Te{sub 5} doped with N at 4.2 at.% by means of large scale ab initio simulations. Nitrogen can be incorporated in molecular form in both the crystalline and amorphous phases at a moderate energy cost. In contrast, insertion of N in the atomic form is very energetically costly in the crystalline phase, though it is still possible in the amorphous phase. These results support the suggestion that N segregates at the grain boundaries during the crystallization of the amorphous phase, resulting in a reduction in size of the crystalline grains and an increased crystallization temperature.

  13. Meshed doped silicon photonic crystals for manipulating near-field thermal radiation

    Science.gov (United States)

    Elzouka, Mahmoud; Ndao, Sidy

    2018-01-01

    The ability to control and manipulate heat flow is of great interest to thermal management and thermal logic and memory devices. Particularly, near-field thermal radiation presents a unique opportunity to enhance heat transfer while being able to tailor its characteristics (e.g., spectral selectivity). However, achieving nanometric gaps, necessary for near-field, has been and remains a formidable challenge. Here, we demonstrate significant enhancement of the near-field heat transfer through meshed photonic crystals with separation gaps above 0.5 μm. Using a first-principle method, we investigate the meshed photonic structures numerically via finite-difference time-domain technique (FDTD) along with the Langevin approach. Results for doped-silicon meshed structures show significant enhancement in heat transfer; 26 times over the non-meshed corrugated structures. This is especially important for thermal management and thermal rectification applications. The results also support the premise that thermal radiation at micro scale is a bulk (rather than a surface) phenomenon; the increase in heat transfer between two meshed-corrugated surfaces compared to the flat surface (8.2) wasn't proportional to the increase in the surface area due to the corrugations (9). Results were further validated through good agreements between the resonant modes predicted from the dispersion relation (calculated using a finite-element method), and transmission factors (calculated from FDTD).

  14. Effect of rapid thermal treatment on optical properties of porous silicon surface doped lithium

    Energy Technology Data Exchange (ETDEWEB)

    Haddadi, Ikbel, E-mail: haded.ikbel@yahoo.fr; Slema, Sonia Ben; Amor, Sana Ben; Bousbih, Rabaa; Bardaoui, Afrah; Dimassi, Wissem; Ezzaouia, Hatem

    2015-04-15

    In this paper, we have studied the effect of rapid thermal annealing on the optical properties of porous silicon layers doped with lithium (Li/PS). Surface modification of As-deposited Li/PS samples through thermal annealing were investigated by varying the temperature from 100 °C to 800 °C in an infrared (IR) heated belt furnace. A decrease in the reflectivity to about 6% for Li/PS annealed at 200 °C was obtained. From Photoluminescence (PL) spectra, a blue-shift of the gap was observed when the temperature is increased to 800 °C; we correlate these results to the change in chemical composition of the layers in order to find the optimized conditions for a potential application in silicon solar cells. - Highlights: • We have varied the annealing temperature of PS doped with Li. • PL intensity shows significant variation as function of temperature. • We observe reduce of Si–O–Li bands with increasing temperature. • Concurrent with the loss of Li we observe a decrease of the PL.

  15. Simultaneous aluminizing and chromizing of steels to form (Fe,Cr){sub 3}Al coatings and Ge-doped silicide coatings of Cr-Zr base alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, M.; He, Y.R.; Rapp, R.A. [Ohio State Univ., Columbus, OH (United States). Dept. of Materials Science and Engineering

    1997-12-01

    A halide-activated cementation pack involving elemental Al and Cr powders has been used to achieve surface compositions of approximately Fe{sub 3}Al plus several percent Cr for low alloy steels (T11, T2 and T22) and medium carbon steel (1045 steel). A two-step treatment at 925 C and 1150 C yields the codeposition and diffusion of aluminum and chromium to form dense and uniform ferrite coatings of about 400 {micro}m thickness, while preventing the formation of a blocking chromium carbide at the substrate surfaces. Upon cyclic oxidation in air at 700 C, the coated steel exhibits a negligible 0.085 mg/cm{sup 2} weight gain for 1900 one-hour cycles. Virtually no attack was observed on coated steels tested at ABB in simulated boiler atmospheres at 500 C for 500 hours. But coatings with a surface composition of only 8 wt% Al and 6 wt% Cr suffered some sulfidation attack in simulated boiler atmospheres at temperatures higher than 500 C for 1000 hours. Two developmental Cr-Zr based Laves phase alloys (CN129-2 and CN117(Z)) were silicide/germanide coated. The cross-sections of the Ge-doped silicide coatings closely mimicked the microstructure of the substrate alloys. Cyclic oxidation in air at 1100 C showed that the Ge-doped silicide coating greatly improved the oxidation resistance of the Cr-Zr based alloys.

  16. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator.

    Science.gov (United States)

    Balcı, Erdem; Akkuş, Ünal Özden; Berber, Savas

    2018-04-18

    The electronic structures of Si and Ge substitutionally doped Sc 2 C(OH) 2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc 2 C(OH) 2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  17. Doped Sc2C(OH)2 MXene: new type s-pd band inversion topological insulator

    Science.gov (United States)

    Balcı, Erdem; Özden Akkuş, Ünal; Berber, Savas

    2018-04-01

    The electronic structures of Si and Ge substitutionally doped Sc2C(OH)2 MXene monolayers are investigated in density functional theory. The doped systems exhibit band inversion, and are found to be topological invariants in Z 2 theory. The inclusion of spin orbit coupling results in band gap openings. Our results point out that the Si and Ge doped Sc2C(OH)2 MXene monolayers are topological insulators. The band inversion is observed to have a new mechanism that involves s and pd states.

  18. Ion-beam doping of amorphous silicon with germanium isovalent impurity

    International Nuclear Information System (INIS)

    Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

    1988-01-01

    Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

  19. Synthesis of Doped and non-Doped Nano MgO Ceramic Membranes

    Directory of Open Access Journals (Sweden)

    Shiraz Labib

    2013-12-01

    Full Text Available Doped and non-doped MgO coated thin films on alumina substrates were prepared using a chelating sol-gel method under controlled conditions to prepare nanomaterials with unprecedented properties. The effect of doping of ZnO on thermal, surface and structural properties was investigated using DTA-TG, BET and XRD respectively. Also microstructural studies and coating thickness measurements of MgO thin film were conducted using SEM. An increase in the thermal stability of MgO with increasing ZnO doping percent was observed. The increase of ZnO doping percent showed a marked decrease in the average particle size of MgO powder as a result of the replacement of some Mg2+ by Zn2+ which has similar ionic radius as Mg2+. This decrease in particle size of MgO was also related to the decrease of the degree of MgO crystalinity. The increase of ZnO doping also showed a marked decrease in coating thickness values of the prepared membranes. This decrease was related to the  mechanism of ZnO doping into a MgO crystal lattice.

  20. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F

    International Nuclear Information System (INIS)

    Hsu, William; Kim, Taegon; Chou, Harry; Rai, Amritesh; Palard, Marylene; Benítez-Lara, Alfredo; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Dolocan, Andrei; Banerjee, Sanjay K.

    2016-01-01

    Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B"+ implantation, the use of the heavier BF_2"+ ions or even BF"+ is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B"+, BF"+, and BF_2"+ implants in crystalline and pre-amorphized Ge, employing rapid thermal annealing at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF"+, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p"+/n junctions formed by BF"+ implantation was evaluated.

  1. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

    KAUST Repository

    Young, N.G.

    2016-10-01

    We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

  2. Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

    KAUST Repository

    Young, N.G.; Farrell, R.M.; Iza, M.; Nakamura, S.; DenBaars, S.P.; Weisbuch, C.; Speck, J.S.

    2016-01-01

    We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

  3. Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

    Science.gov (United States)

    Wang, Yong; Zheng, Yonghui; Liu, Guangyu; Li, Tao; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Song, Sannian; Ren, Kun; Song, Zhitang

    2018-03-01

    To bridge the gap of access time between memories and storage systems, the concept of storage class memory has been put forward based on emerging nonvolatile memory technologies. For all the nonvolatile memory candidates, the unpleasant tradeoff between operation speed and retention seems to be inevitable. To promote both the write speed and the retention of phase change memory (PCM), Sc doped Ge2Sb2Te5 (SGST) has been proposed as the storage medium. Octahedral Sc-Te motifs, acting as crystallization precursors to shorten the nucleation incubation period, are the possible reason for the high write speed of 6 ns in PCM cells, five-times faster than that of Ge2Sb2Te5 (GST) cells. Meanwhile, an enhanced 10-year data retention of 119 °C has been achieved. Benefiting from both the increased crystalline resistance and the inhibited formation of the hexagonal phase, the SGST cell has a 77% reduction in power consumption compared to the GST cell. Adhesion of the SGST/SiO2 interface has been strengthened, attributed to the reduced stress by forming smaller grains during crystallization, guaranteeing the reliability of the device. These improvements have made the SGST material a promising candidate for PCM application.

  4. Behavior of Sn atoms in GeSn thin films during thermal annealing: Ex-situ and in-situ observations

    Science.gov (United States)

    Takase, Ryohei; Ishimaru, Manabu; Uchida, Noriyuki; Maeda, Tatsuro; Sato, Kazuhisa; Lieten, Ruben R.; Locquet, Jean-Pierre

    2016-12-01

    Thermally induced crystallization processes for amorphous GeSn thin films with Sn concentrations beyond the solubility limit of the bulk crystal Ge-Sn binary system have been examined by X-ray photoelectron spectroscopy, grazing incidence X-ray diffraction, and (scanning) transmission electron microscopy. We paid special attention to the behavior of Sn before and after recrystallization. In the as-deposited specimens, Sn atoms were homogeneously distributed in an amorphous matrix. Prior to crystallization, an amorphous-to-amorphous phase transformation associated with the rearrangement of Sn atoms was observed during heat treatment; this transformation is reversible with respect to temperature. Remarkable recrystallization occurred at temperatures above 400 °C, and Sn atoms were ejected from the crystallized GeSn matrix. The segregation of Sn became more pronounced with increasing annealing temperature, and the ejected Sn existed as a liquid phase. It was found that the molten Sn remains as a supercooled liquid below the eutectic temperature of the Ge-Sn binary system during the cooling process, and finally, β-Sn precipitates were formed at ambient temperature.

  5. Silver antimony Ohmic contacts to moderately doped n-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-21

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

  6. Regge pole plus cut model for proton-antiproton elastic scattering at collider and tevatron energies

    International Nuclear Information System (INIS)

    Aleem, Fazal; Saleem, Mohammad

    1988-01-01

    The Regge pole plus cut model has been used to explain the data at the collider energies √=546 and 630 GeV and the most recent differential cross-section results at √=1.8 TeV. Predictions of the model at 1.8 and 40 TeV are compared with those of Bourrely et al. (1984). (author). 22 refs., 7 figs

  7. Synthesis, structural, thermal and optical properties of TeO2-Bi2O3-GeO2-Li2O glasses

    Science.gov (United States)

    Dimowa, Louiza; Piroeva, Iskra; Atanasova-Vladimirova, S.; Petrova, Nadia; Ganev, Valentin; Titorenkova, Rositsa; Yankov, Georgi; Petrov, Todor; Shivachev, Boris L.

    2016-10-01

    In this study, synthesis and characterization of novel quaternary tellurite glass system TeO2-Bi2O3-GeO2-Li2O is presented. The compositions include TeO2 and GeO2 as glass formers while different proportion of Bi2O3 and Li2O act as network modifiers. Differential thermal analysis, X-ray diffraction, scanning electron microscopy energy dispersive X-ray spectroscopy, laser ablation inductively coupled plasma mass spectrometry, UV-Vis and Raman spectroscopy are applied to study the structural, thermal and optical properties of the studied glasses. Obtained glasses possess a relatively low glass transition temperature (around 300 °C) if compared to other tellurite glasses, show good thermal transparency in the visible and near infra-red (from 2.4 to 0.4 μm) and can double the frequency of laser light from its original wavelength of 1064 nm to its second-harmonic at 532 nm (i.e. second harmonic generation).

  8. Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-10-09

    The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

  9. Heavy Ion Current Transients in SiGe HBTs

    Science.gov (United States)

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  10. Enhanced surface transfer doping of diamond by V{sub 2}O{sub 5} with improved thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Crawford, Kevin G., E-mail: k.crawford.2@research.gla.ac.uk; Moran, David A. J. [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom); Cao, Liang [High Magnetic Field Laboratory, Chinese Academy of Sciences, 350 Shushanhu Road, Hefei 230031, Anhui (China); Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore); Qi, Dongchen, E-mail: d.qi@latrobe.edu.au [Department of Chemistry and Physics, La Trobe Institute for Molecular Science, La Trobe University, Melbourne, Victoria 3086 (Australia); Tallaire, Alexandre [LSPM-CNRS, Université Paris 13, Villetaneuse 93430 (France); Limiti, E.; Verona, C. [Department of Industrial Engineering, “Tor Vergata” University, Rome 00173 (Italy); Wee, Andrew T. S. [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, Singapore 117542 (Singapore)

    2016-01-25

    Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V{sub 2}O{sub 5} as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V{sub 2}O{sub 5} as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V{sub 2}O{sub 5} deposition shows an increase in hole carrier concentration in the diamond from 3.0 × 10{sup 12} to 1.8 × 10{sup 13 }cm{sup −2} at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V{sub 2}O{sub 5} in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V{sub 2}O{sub 5} is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping.

  11. Group-13 and group-15 doping of germanane

    Directory of Open Access Journals (Sweden)

    Nicholas D. Cultrara

    2017-08-01

    Full Text Available Germanane, a hydrogen-terminated graphane analogue of germanium has generated interest as a potential 2D electronic material. However, the incorporation and retention of extrinsic dopant atoms in the lattice, to tune the electronic properties, remains a significant challenge. Here, we show that the group-13 element Ga and the group-15 element As, can be successfully doped into a precursor CaGe2 phase, and remain intact in the lattice after the topotactic deintercalation, using HCl, to form GeH. After deintercalation, a maximum of 1.1% As and 2.3% Ga can be substituted into the germanium lattice. Electronic transport properties of single flakes show that incorporation of dopants leads to a reduction of resistance of more than three orders of magnitude in H2O-containing atmosphere after As doping. After doping with Ga, the reduction is more than six orders of magnitude, but with significant hysteretic behavior, indicative of water-activation of dopants on the surface. Only Ga-doped germanane remains activated under vacuum, and also exhibits minimal hysteretic behavior while the sheet resistance is reduced by more than four orders of magnitude. These Ga- and As-doped germanane materials start to oxidize after one to four days in ambient atmosphere. Overall, this work demonstrates that extrinsic doping with Ga is a viable pathway towards accessing stable electronic behavior in graphane analogues of germanium.

  12. thermally poled channel waveguides with polarization independent electro-optic effect

    DEFF Research Database (Denmark)

    Ren, Yitao; Marckmann, Carl Johan; Arentoft, Jesper

    2002-01-01

    We present a systematic investigation of the poling-induced electrooptic (EO) effect in germanium and nitrogen codoped channel waveguides. The channel waveguides show attractive properties: (1) almost polarization independent EO effect; (2) a flat frequency response with the modulation frequency up...... to 100 kHz; and (3) low linear loss and low polarization dependent loss, which demonstrate great technological potential...

  13. Wavelength dependence of the Brillouin spectral width of boron doped germanosilicate optical fibers.

    Science.gov (United States)

    Law, Pi-Cheng; Dragic, Peter D

    2010-08-30

    Boron co-doped germanosilicate fibers are investigated via the Brillouin light scattering technique using two wavelengths, 1534 nm and 1064 nm. Several fibers are investigated, including four drawn from the same preform but at different draw temperatures. The Stokes' shifts and the Brillouin spectral widths are found to increase with increasing fiber draw temperature. A frequency-squared law has adequately described the wavelength dependence of the Brillouin spectral width of conventional Ge-doped fibers. However, it is found that unlike conventional Ge-doped fibers these fibers do not follow the frequency-squared law. This is explained through a frequency-dependent dynamic viscosity that modifies this law.

  14. Lattice thermal expansion and solubility limits of neodymium-doped ceria

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jinhua, E-mail: jhzhang1212@126.com [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); State Key laboratory of Geological Process and Mineral Resources, China University of Geosciences, Wuhan 430074 (China); Ke, Changming [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China); Wu, Hongdan [College of Resources and Enviromental Engineering, Wuhan University of Science and Technology, Wuhan 430081 (China); Yu, Jishun [State Key laboratory of Geological Process and Mineral Resources, China University of Geosciences, Wuhan 430074 (China); Wang, Jingran [The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081 (China)

    2016-11-15

    Nd{sub x}Ce{sub 1−x}O{sub 2−0.5x} (x=0–1.0) powders were prepared by reverse coprecipitation-calcination method and characterized by XRD. The crystal structure of product powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value. An empirical equation simulating the lattice parameter of neodymium doped ceria was established based on the experimental data. The lattice parameters of the fluorite structure solid solutions increased with extensive adoption of Nd{sup 3+}, and the heating temperature going up. The average thermal expansion coefficients of neodymium doped ceria with fluorite structure are higher than 13.5×10{sup −6} °C{sup −1} from room temperature to 1200 °C. - Graphical abstract: The crystal structure of Nd{sub x}Ce{sub 1−x}O{sub 2−0.5x} (x=0–1.0) powders transformed from single fluorite structure to the complex of fluorite and C-type cubic structure, and finally to trigonal structure with the increase of x-value.

  15. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Directory of Open Access Journals (Sweden)

    J. W. Zhang

    2017-10-01

    Full Text Available As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC. In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  16. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Science.gov (United States)

    Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

    2017-10-01

    As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  17. Growth of two-dimensional Ge crystal by annealing of heteroepitaxial Ag/Ge(111) under N2 ambient

    Science.gov (United States)

    Ito, Koichi; Ohta, Akio; Kurosawa, Masashi; Araidai, Masaaki; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-06-01

    The growth of a two-dimensional crystal of Ge atoms on an atomically flat Ag(111) surface has been demonstrated by the thermal annealing of a heteroepitaxial Ag/Ge structure in N2 ambient at atmospheric pressure. The surface morphology and chemical bonding features of heteroepitaxial Ag(111) grown on wet-cleaned Ge(111) after annealing at different temperatures and for various times have been systematically investigated to control the surface segregation of Ge atoms and the planarization of the heteroepitaxial Ag(111) surface.

  18. Effects of time-temperature profiles on glow curves of germanium-doped optical fibre

    Science.gov (United States)

    Lam, S. E.; Alawiah, A.; Bradley, D. A.; Mohd Noor, N.

    2017-08-01

    The Germanium (Ge) doped silica optical fibres have demonstrated the great potential to be developed as a thermoluminescent (TL) dosimeter that can be used in various applications in radiotherapy, diagnostic radiology, UV dosimetry system and food irradiation industry. Different time-temperature profile (TTP) parameters of the TL reader have been employed by many researchers in various of TL studies. Nevertheless, none of those studies adequately addressed the effects of the reader's preheat temperature and heating rate on the kinetic parameters of the TL glow curve specifically, the Ge-doped silica optical fibres. This research addresses the issue of TTP parameters with special attention to the determination of the kinetic parameters of the glow curve. The glow curve responses were explored and the kinetic parameters were analyzed by the WinGCF software, to show the effect of the preheat temperature and heating rate of the reader on Ge-doped fibre irradiated with 18 Gy of 6 MV photons radiation. The effect of TTP parameters was discussed and compared against the commercial fibre and tailored made fibre of 6 mol% Ge-doped of flat and cylindrical shape. The deconvolution of glow peaks and the kinetic parameters were obtained by the WinGCF software. This enables to fit accurately (1.5%Ge-doped silica optical fibres.

  19. Reduction in the formation temperature of Poly-SiGe alloy thin film in Si/Ge system

    Science.gov (United States)

    Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Sarguna, R. M.; Magudapathy, P.; Ilango, S.

    2018-04-01

    The role of deposition temperature in the formation of poly-SiGe alloy thin film in Si/Ge system is reported. For the set ofsamples deposited without any intentional heating, initiation of alloying starts upon post annealingat ˜ 500 °C leading to the formation of a-SiGe. Subsequently, poly-SiGe alloy phase could formonly at temperature ≥ 800 °C. Whereas, for the set of samples deposited at 500 °C, in-situ formation of poly-SiGe alloy thin film could be observed. The energetics of the incoming evaporated atoms and theirsubsequent diffusionsin the presence of the supplied thermal energy is discussed to understand possible reasons for lowering of formation temperature/energyof the poly-SiGe phase.

  20. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  1. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  2. Effect of ZDDP concentration on the thermal film formation on steel, hydrogenated non-doped and Si-doped DLC

    Science.gov (United States)

    Akbari, S.; Kovač, J.; Kalin, M.

    2016-10-01

    This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.

  3. Monolithically Integrated Ge-on-Si Active Photonics

    Directory of Open Access Journals (Sweden)

    Jifeng Liu

    2014-07-01

    Full Text Available Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interesting candidate for active photonic devices in Si photonics due to its pseudo-direct gap behavior and compatibility with Si complementary metal oxide semiconductor (CMOS processing. In this paper, we present a review of the recent progress in Ge-on-Si active photonics materials and devices for photon detection, modulation, and generation. We first discuss the band engineering of Ge using tensile strain, n-type doping, Sn alloying, and separate confinement of Γ vs. L electrons in quantum well (QW structures to transform the material towards a direct band gap semiconductor for enhancing optoelectronic properties. We then give a brief overview of epitaxial Ge-on-Si materials growth, followed by a summary of recent investigations towards low-temperature, direct growth of high crystallinity Ge and GeSn alloys on dielectric layers for 3D photonic integration. Finally, we review the most recent studies on waveguide-integrated Ge-on-Si photodetectors (PDs, electroabsorption modulators (EAMs, and laser diodes (LDs, and suggest possible future research directions for large-scale monolithic electronic-photonic integrated circuits on a Si platform.

  4. Insights into thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks and their suppressed reaction with atomically thin AlO{sub x} interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Ogawa, Shingo, E-mail: Shingo-Ogawa@trc.toray.co.jp [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Asahara, Ryohei; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Sako, Hideki; Kawasaki, Naohiko; Yamada, Ichiko; Miyamoto, Takashi [Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan)

    2015-12-21

    The thermal diffusion of germanium and oxygen atoms in HfO{sub 2}/GeO{sub 2}/Ge gate stacks was comprehensively evaluated by x-ray photoelectron spectroscopy and secondary ion mass spectrometry combined with an isotopic labeling technique. It was found that {sup 18}O-tracers composing the GeO{sub 2} underlayers diffuse within the HfO{sub 2} overlayers based on Fick's law with the low activation energy of about 0.5 eV. Although out-diffusion of the germanium atoms through HfO{sub 2} also proceeded at the low temperatures of around 200 °C, the diffusing germanium atoms preferentially segregated on the HfO{sub 2} surfaces, and the reaction was further enhanced at high temperatures with the assistance of GeO desorption. A technique to insert atomically thin AlO{sub x} interlayers between the HfO{sub 2} and GeO{sub 2} layers was proven to effectively suppress both of these independent germanium and oxygen intermixing reactions in the gate stacks.

  5. Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition

    International Nuclear Information System (INIS)

    Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; Kaufmann, Rolf; Kaenel, Hans von

    2008-01-01

    We have fabricated a series of p-i-n Ge/Si heterojunction photodetectors with different thicknesses of the intrinsic Ge layer, different doping levels of the p and n layers and different diode diameters. Epitaxial Ge was deposited on Si(100) using low-energy plasma-enhanced CVD (LEPECVD) followed by cyclic annealing. Dark current values as low as 0.04 mA/cm 2 were achieved for 1 μm thick p-i-n photodiodes on lightly doped substrates at - 1 V bias, and external quantum efficiencies of 56% at 1.30 μm and 44% at 1.55 μm for 3 μm thick p + -i-n + photodiodes on highly doped substrates under 0.5 V reverse bias. For a 30 μm diameter diode a RC frequency of 21 GHz is obtained at a reverse bias of 1 V. With such characteristics, these diodes are attractive for telecommunication and optoelectronic applications

  6. Intermixing between HfO2 and GeO2 films deposited on Ge(001) and Si(001): Role of the substrate

    International Nuclear Information System (INIS)

    Soares, G. V.; Krug, C.; Miotti, L.; Bastos, K. P.; Lucovsky, G.; Baumvol, I. J. R.; Radtke, C.

    2011-01-01

    Thermally driven atomic transport in HfO 2 /GeO 2 /substrate structures on Ge(001) and Si(001) was investigated in N 2 ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO 2 /Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO 2 /GeO 2 stacks are stable only if isolated from the Ge substrate.

  7. Quantum confinement effects on the thermoelectric figure of merit in Si/Si{sub 1{minus}x}Ge{sub x} system

    Energy Technology Data Exchange (ETDEWEB)

    Sun, X; Dresselhaus, M S; Wang, K L; Tanner, M O

    1997-07-01

    The Si/Si{sub 1{minus}x}Ge{sub x} quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. The authors report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of {delta}-doping within the barrier layers. The {delta}-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, {kappa}. The {delta}-doping should further reduce {kappa} in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.

  8. Effect of alkaline earth metal doping on thermal, optical, magnetic and dielectric properties of BiFeO3 nanoparticles

    International Nuclear Information System (INIS)

    Bhushan, B; Das, D; Basumallick, A; Bandopadhyay, S K; Vasanthacharya, N Y

    2009-01-01

    Substrate-free pure-phase BiFeO 3 (BFO) nanoparticles doped with alkaline earth metals (Ba, Sr and Ca) have been synthesized by a sol-gel route and their thermal, optical, dielectric and magnetic properties are discussed. The characteristic structural phase transitions of BFO nanoparticles are found to occur at much lower temperatures. A reduction of the Neel temperature has been observed in the doped samples in comparison with the pristine one, whereas the band gap shows a reverse trend. Iron was found to be only in the Fe 3+ valence state in all the doped samples. Magnetoelectric coupling is seen in our samples. Weak ferromagnetism is observed at room temperature in all of the doped and undoped BFO nanoparticles with the largest value of coercive field ∼1.78 kOe and saturation magnetization ∼2.38 emu g -1 for Ba and Ca doped BFO nanoparticles, respectively.

  9. Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

    CSIR Research Space (South Africa)

    Chawanda, A

    2011-05-01

    Full Text Available The authors have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2...

  10. Effect of doping on all TMC vertical heterointerfaces

    Science.gov (United States)

    Nair, Salil; Joy, Jolly; Patel, K. D.; Pataniya, Pratik; Solanki, G. K.; Pathak, V. M.; Sumesh, C. K.

    2018-05-01

    The present work reports the growth and basic characterizations of GeSePbx (x=0, 0.02, 0.04) layered mono chalcogenide single crystal substrates for preparation of heterojunction devices. These crystals are grown by Direct Vapour Transport (DVT) Technique [1,2]. Heterojunction interfaces on these substrates are prepared using thermal evaporation of nanocrystalline SnSe thin films having 5kÅ thickness. The electrical characterizations reveal the rectifying behavior of the devices based on which its ideality factor, barrier height, saturation current, series resistance etc. have been determined using thermionic emission model [3,4]. The device parameters have been determined and analyzed by three different methods viz. LnI-V, Cheung's method and Norde method [5]. The variation in the device parameters in light of doping is reported in the present work.

  11. Interaction of slow neutrons with 74Ge single crystals

    International Nuclear Information System (INIS)

    Pshenichnyj, V.A.; Pak En Men; Vorobkalo, F.M.; Vertebnyj, V.P.

    1986-01-01

    The total cross section of monocrystal from germanium-74 isotope by the time-of-flight method in the 0.017-10 eV range is measured. At room temperatures the above monocrystal possesses the capability of separating from the white reactor spectrum intensive beams of thermal neutrons. It is shown that the 74 Ge monocrystal by its filtering properties approaches to the Si monocrystal. The observed cross sections for Si, Ge, 74 Ge monocrystals in the thermal region of neutron energy are indicated in the study

  12. Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

    International Nuclear Information System (INIS)

    Jund, Philippe; Viennois, Romain; Tédenac, Jean-Claude; Colinet, Catherine; Hug, Gilles; Fèvre, Mathieu

    2013-01-01

    We report an ab initio study of the semiconducting Mg 2 X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the formation energy of Mg 2 Ge is 50% larger than that of Mg 2 Si, in agreement with the experimental tendency. From a study of the stability and the electronic properties of the most stable defects, taking into account the growth conditions, we show that the main cause of the n doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg 2 Ge than in Mg 2 Si, this explains why Mg 2 Ge can be of n or p type, in contrast to Mg 2 Si. The finding that the most stable defects are different in Mg 2 Si and Mg 2 Ge and depend on the growth conditions is important and must be taken into account in the search for the optimal doping to improve the thermoelectric properties of these materials.

  13. Synthesis and photocatalytic activity of Eu3+-doped nanoparticulate TiO2 sols and thermal stability of the resulting xerogels

    International Nuclear Information System (INIS)

    Borlaf, Mario; Moreno, Rodrigo; Ortiz, Angel L.; Colomer, María T.

    2014-01-01

    The synthesis of nanoparticulate TiO 2 sols without and with Eu 3+ doping (1, 2, or 3 mol%) by the colloidal sol–gel method in aqueous media was investigated, with emphasis on the effect of the Eu 3+ doping on the peptization time and rheological properties of the sols. It was found that the addition of Eu 3+ increasingly retards the peptization process, and also results in sols with greater aggregate sizes which are therefore more viscous, although in all cases the distributions of aggregate sizes are unimodal and the flow behavior is Newtonian. The shifting of the isoelectric point of the sols toward greater pH with increasing Eu 3+ doping indicates that the aforementioned trends are due to the chemical adsorption of europium ionic complexes in the form of solvated species. Furthermore, the effect of Eu 3+ doping on the ultraviolet–visible spectrum and photocatalytic activity of the peptized sols was also explored. It was found that the Eu 3+ doping increasingly shifts slightly the absorption edge from the ultraviolet to the visible range, and that its effect on the photocatalytic activity is certainly complex because this is enhanced only if the Eu 3+ cations have some electronic transition (charge transfer transition or transitions between the ground state and the excited states) at the wavelength of the incident radiation, in which case the photocatalytic activity first increases with increasing Eu 3+ content and then decreases perhaps due to occurrence of Eu–Eu interactions or simply to the greater aggregation state. Finally, the influence of the Eu 3+ doping on the thermal stability of the nanoparticulate xerogels resulting from the drying of the peptized sols was also examined by X-ray thermo-diffractometry together with transmission electron microscopy, selected area electron diffractometry, and X-ray energy-dispersive spectrometry. It was found that although the xerogels crystallize all as anatase phase, this is increasingly more thermally stable

  14. Electronic structure of Ge-2 and Ge-2 and thermodynamic properties of Ge-2 from all electron ab initio investigations and Knudsen effusion mass spectroscopic measurements

    DEFF Research Database (Denmark)

    Shim, Irene; Baba, M. Sai; Gingerich, K.A.

    2002-01-01

    The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term and for t......The low-lying states of the molecule Ge-2 and of the ion Ge-2(-) have been investigated by all electron ab initio multiconfiguration self-consistent field (CASSCF) and multi-reference configuration interaction (MRCI) calculations. The relativistic corrections for the Darwin contact term...... excited states are presented. Thermal functions based on the theoretically determined molecular parameters were used to derive the thermodynamic properties of the Ge-2 molecule from new mass spectrometric equilibrium data. The literature value for the dissociation energy of Ge-2 has been re...

  15. Effect of Fe Doping by Thermal in-Diffusion on the Defect Structure of Lithium Niobate

    Energy Technology Data Exchange (ETDEWEB)

    Mignoni, S; Zaltron, A; Ciampolillo, M V; Bazzan, M; Argiolas, N; Sada, C; Fontana, M D, E-mail: zaltronam@padova.infm.it

    2010-11-15

    In this work we investigate the iron incorporation in thermally diffused Fe doped LN, by combining two experimental techniques, i.e. micro-Raman spectroscopy and proton induced X rays emission. Our results point out that in substituting for Li, Fe ions induces a decrease of Nb{sub Li} antisite defects and rearrangement of the Nb sublattice.

  16. Coupling between Ge-nanocrystals and defects in SiO2

    International Nuclear Information System (INIS)

    Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

    2006-01-01

    Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

  17. Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

    International Nuclear Information System (INIS)

    Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

    2012-01-01

    The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

  18. Reactivity of silicon and germanium doped CNTs toward aromatic sulfur compounds: A theoretical approach

    International Nuclear Information System (INIS)

    Galano, Annia; Francisco-Marquez, Misaela

    2008-01-01

    Adsorption processes of thiophene and benzothiophene on pristine carbon nanotubes (CNTs), and on CNTs doped with Si or Ge, have been modeled with Density Functional. This is the first study on the chemical reactivity of such doped tubes. The calculated data suggest that the presence of silicon or germanium atoms in CNTs increases their reactivity toward thiophene, and benzothiophene. The adsorption of these species on pristine CNTs seems very unlikely to occur, while the addition products involving doped CNTs were found to be very stable, with respect to the isolated reactants, in terms of Gibbs free energy. Several of these adsorption processes were found to be significantly exergonic (ΔG < 0) in non-polar liquid phase. The results reported in this work suggest that Si and Ge defects on CNTs increase their reactivity toward unsaturated species, and could make them useful in the removal processes of aromatic sulfur compounds from oil-hydrocarbons. However, according to our results, CNTs doped with Si atoms are expected to be more efficient as aromatic sulfur compounds scavengers than those doped with Ge. These results also suggest that the presence of silicon and germanium atoms in the CNTs structures enhances their reactivity toward nucleophilic molecules, compared to pristine carbon nanotubes

  19. New results on 68Ge by means of the (p,t) reaction

    International Nuclear Information System (INIS)

    Guilbault, F.; Ardouin, D.; Tamisier, R.; Avignon, P.; Vergnes, M.; Rotbard, G.; Berrier, G.; Seltz, R.

    1976-11-01

    The 70 Ge(p,t) 68 Ge reaction has been studied at 26MeV incident energy with an overall resolution of 10keV using a split-pole spectrometer. Forty-one 68 Ge levels, among which twenty-eight are observed for the first time are populated below 5.2MeV excitation energy. Angular distributions are obtained and comparison with distorted-wave Born approximation calculations allows spin and parity assignments. Some interesting results are the discovery of the first excited 0 + level at 1.753 MeV, of the first level Jsup(π)=3 - at 2.651MeV and the observation of seven 0 + levels above 2MeV excitation energy. A level at 4.456MeV is postulated Jsup(π)=6 +

  20. Defining the Thermal Stability of Ba8Ga16Ge30 and its Future in Thermoelectrics

    DEFF Research Database (Denmark)

    Reardon, Hazel; Iversen, Bo Brummerstedt; Blichfeld, Anders Bank

    The majority of research on the auspicious n/p-Ba8Ga16-xGe30+x (BGG) Type-I thermoelectric clathrates has been focused on property measurements at low temperature. High temperature property measurements have also been reported for BGG, although they have not yet been fully explained. Therefore...... to evaluate the underlying chemistry of the anomalies seen in thermoelectric property measurements. Using X-ray diffraction and DTA-TG, we have discovered that BGG is not chemically stable at high temperatures over a range of thermal treatment periods. Our variable temperature synchrotron XRD measurements...... and longer term annealing experiments reveal that Ge evolution is the first indicator of BGG decomposition. This presentation summarizes the results from these research activities and highlight that the slow decomposition kinetics of BGG have been overlooked on the timescales typically used...

  1. Characterizing Background Events in Neutron Transmutation Doped Thermistors for CUORE-0

    Science.gov (United States)

    Dutta, Suryabrata; Cuore Collaboration

    2017-09-01

    The Cryogenic Underground Observatory for Rare Events (CUORE) is a ton-scale neutrinoless double-beta decay experiment operating at the Laboratori Nazionali del Gran Sasso (LNGS). The experiment is comprised of 988 TeO2 bolometric crystals arranged into 19 towers and operated at a temperature of 15 mK. A neutron-transmutation-doped (NTD) Ge thermistor measures the thermal response from particles incident on the crystals. However, bulk and surface contamination of the NTD thermistors themselves produce distorted thermal responses inside the thermistor volume. Although these pulses are efficiently removed from the double-beta decay analysis by pulse shape cuts, they can be used to extract information about thermistor contamination. I will present a multifaceted approach to characterize these events, in which I implement an improved hot-electron thermal model, Geant4 Monte Carlo simulations of background events, and data from a previous experiment, CUORE-0, reprocessed with a new optimal filter. Using this approach, rates and energy deposition from contamination inside the NTD thermistors are measured, giving us better understanding of a CUORE background source.

  2. Thermal neutron imaging with rare-earth-ion-doped LiCaAlF6 scintillators and a sealed 252Cf source

    International Nuclear Information System (INIS)

    Kawaguchi, Noriaki; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Fukuda, Kentaro; Suyama, Toshihisa; Watanabe, Kenichi; Yamazaki, Atsushi; Chani, Valery; Yoshikawa, Akira

    2011-01-01

    Thermal neutron imaging with Ce-doped LiCaAlF 6 crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF 6 scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF 6 single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm 2 was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The 252 Cf source ( 6 .

  3. Negative thermal expansion and magnetocaloric effect in Mn-Co-Ge-In thin films

    Science.gov (United States)

    Liu, Y.; Qiao, K. M.; Zuo, S. L.; Zhang, H. R.; Kuang, H.; Wang, J.; Hu, F. X.; Sun, J. R.; Shen, B. G.

    2018-01-01

    MnCoGe-based alloys with magnetostructural transition show giant negative thermal expansion (NTE) behavior and magnetocaloric effects (MCEs) and thus have attracted a lot of attention. However, the drawback of bad mechanical behavior in these alloys obstructs their practical applications. Here, we report the growth of Mn-Co-Ge-In films with thickness of about 45 nm on (001)-LaAlO3, (001)-SrTiO3, and (001)-Al2O3 substrates. The films grown completely overcome the breakable nature of the alloy and promote its multifunctional applications. The deposited films have a textured structure and retain first-order magnetostructural transition. NTE and MCE behaviors associated with the magnetostructural transition have been studied. The films exhibit a completely repeatable NTE around room temperature. NTE coefficient α can be continuously tuned from the ultra-low expansion (α ˜ -2.0 × 10-7/K) to α ˜ -6.56 × 10-6/K, depending on the growth and particle size of the films on different substrates. Moreover, the films exhibit magnetic entropy changes comparable to the well-known metamagnetic films. All these demonstrate potential multifunctional applications of the present films.

  4. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    International Nuclear Information System (INIS)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-01-01

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

  5. Ge-intercalated graphene: The origin of the p-type to n-type transition

    KAUST Repository

    Kaloni, Thaneshwor P.

    2012-09-01

    Recently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.

  6. A molecular dynamics study of thermal transport in nanoparticle doped Argon like solid

    Energy Technology Data Exchange (ETDEWEB)

    Shahadat, Muhammad Rubayat Bin, E-mail: rubayat37@gmail.com; Ahmed, Shafkat; Morshed, A. K. M. M. [Department of Mechanical Engineering Bangladesh University of Engineering and Technology (BUET) Dhaka (Bangladesh)

    2016-07-12

    Interfacial phenomena such as mass and type of the interstitial atom, nano scale material defect influence heat transfer and the effect become very significant with the reduction of the material size. Non Equilibrium Molecular Dynamics (NEMD) simulation was carried out in this study to investigate the effect of the interfacial phenomena on solid. Argon like solid was considered in this study and LJ potential was used for atomic interaction. Nanoparticles of different masses and different molecular defects were inserted inside the solid. From the molecular simulation, it was observed that a large interfacial mismatch due to change in mass in the homogenous solid causes distortion of the phonon frequency causing increase in thermal resistance. Position of the doped nanoparticles have more profound effect on the thermal conductivity of the solid whereas influence of the mass ratio is not very significant. Interstitial atom positioned perpendicular to the heat flow causes sharp reduction in thermal conductivity. Structural defect caused by the molecular defect (void) also observed to significantly affect the thermal conductivity of the solid.

  7. The effect of poling conditions on the performance of piezoelectric energy harvesters fabricated by wet chemistry

    KAUST Repository

    Fuentes-Fernandez, Erika Maria-Anai

    2015-03-25

    The effect of poling conditions on the power output of piezoelectric energy harvesters using sol-gel based Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 piezoelectric thin-films has been investigated. A strong correlation was established between the poling efficiency and harvester output. A method based on simple capacitance-voltage measurements is shown to be an effective approach to estimate the power output of harvesters poled under different conditions. The poling process was found to be thermally activated with an activation energy of 0.12 eV, and the optimum poling conditions were identified (200 kV cm-1, 250 °C for 50 min). The voltage output and power density obtained under optimum poling conditions were measured to be 558 V cm-2 and 325 μW cm-2, respectively. © The Royal Society of Chemistry.2015.

  8. Thermal conductivity of high-porosity heavily doped biomorphic silicon carbide prepared from sapele wood biocarbon

    Science.gov (United States)

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Cabezas-Rodriguez, R.; Ramirez-Rico, J.

    2012-08-01

    The electrical resistivity and thermal conductivity of high-porosity (˜52 vol %, channel-type pores) bio-SiC samples prepared from sapele wood biocarbon templates have been measured in the temperature range 5-300 K. An analysis has been made of the obtained results in comparison with the data for bio-SiC samples based on beech and eucalyptus, as well as for polycrystalline β-SiC. The conclusion has been drawn that the electrical resistivity and thermal conductivity of bio-SiC samples based on natural wood are typical of heavily doped polycrystalline β-SiC.

  9. Thermal, optical and structural properties of Dy3+ doped sodium aluminophosphate glasses

    Science.gov (United States)

    Kaur, Manpreet; Singh, Anupinder; Thakur, Vanita; Singh, Lakhwant

    2016-03-01

    Trivalent Dysprosium doped sodium aluminophosphate glasses with composition 50P2O5-10Al2O3-(20-x)Na2O-20CaO-xDy2O3 (x varying from 0 to 5 mol%) were prepared by melt quench technique. The density of the prepared samples was measured using Archimedes principle and various physical properties like molar volume, rare earth ion concentration, polaron radius, inter nuclear distance and field strength were calculated using different formulae. The differential scanning calorimetry (DSC) was carried out to study the thermal stability of prepared glasses. The UV Visible absorption spectra of the dysprosium doped glasses were found to be comprised of ten absorption bands which correspond to transitions from ground state 6H15/2 to various excited states. The indirect optical band gap energy of the samples was calculated by Tauc's plot and the optical energy was found to be attenuated with Dy3+ ions. The photoluminescence spectrum revealed that Dy3+ doped aluminophosphate glasses have strong emission bands in the visible region. A blue emission band centred at 486 nm, a bright yellow band centred at 575 nm and a weak red band centred at 668 nm were observed in the emission spectrum due to excitation at 352 nm wavelength. Both FTIR and Raman spectra assert slight structural changes induced in the host glass network with Dy3+ ions.

  10. Structural, thermal and spectroscopic properties of highly Er3+-doped novel oxyfluoride glasses for photonic application

    Energy Technology Data Exchange (ETDEWEB)

    Kesavulu, C.R. [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Sreedhar, V.B.; Jayasankar, C.K. [Department of Physics, Sri Venkateswara University, Tirupati 517502 (India); Jang, Kiwan [Department of Physics, Changwon National University, Changwon 641-773 (Korea, Republic of); Shin, Dong-Soo [Department of Chemistry, Changwon National University, Changwon 641-773 (Korea, Republic of); Yi, Soung Soo, E-mail: ssyi@silla.ac.kr [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of)

    2014-03-01

    Graphical abstract: - Highlights: • Er{sup 3+}-doped novel oxyfluoride glasses have been prepared by melt quenching technique. • Structural, thermal and spectroscopic properties have been carried out. • SALSFEr glasses exhibit intense green and weak red emissions at 365 nm excitation. • Major laser transition for Er{sup 3+} ion in SALSFEr glasses is {sup 4}I{sub 13/2} → {sup 4}I{sub 15/2} (1.53 μm). • These results suggest the possibility of using SALSFEr glasses as photonic devices. - Abstract: The Er{sup 3+}-doped novel oxyfluoride glasses of composition (43 − x)SiO{sub 2}–10Al{sub 2}O{sub 3}–24LiF–23SrF{sub 2}–xEr{sub 2}O{sub 3}, where x = 1.0, 2.0, 4.0 and 6.0 mol%, have been prepared by conventional melt quenching technique and are characterized through X-ray diffraction (XRD), differential thermal analysis (DTA), Raman, Fourier transform infrared (FT-IR) analysis, optical absorption spectra, visible (vis) and near-infrared (NIR) emission spectra measurements. Judd–Ofelt (JO) intensity parameters (Ω{sub λ}, λ = 2, 4 and 6) have been derived from the absorption spectrum of 1.0 mol% Er{sub 2}O{sub 3} doped glass and are in turn used to calculate radiative properties for the important luminescent levels of Er{sup 3+} ions. The studied glasses show intense green and weak red visible emissions under 365 nm excitation. The decrease in visible emission intensities with concentration of Er{sup 3+} ions has been explained due to energy transfer processes between Er{sup 3+} ions. Upon excitation at 980 nm laser diode, an intense 1.53 μm NIR emission has been observed with the maximum full width at half maximum (FWHM) for Er{sup 3+}-doped oxyfluoride glasses. The higher Er{sup 3+} ion doping capability and relatively high gain and broad emission at 1.5 μm are the most notable features of these glasses to realize efficient short-length optical amplifiers.

  11. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  12. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  13. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  14. Study of thermal properties and the effect of carrier concentration in the ternary compound Ag6Ge10P12

    International Nuclear Information System (INIS)

    Ahmad, K.A.

    1990-01-01

    In this work the thermal properties of the ternary semiconducting compounds (Ag6Ge10P12) have been investigated. Single crystal samples prepared by Bridgman technique low temperature cryostat are illustrated which is suitable to control temperature from liquid nitrogen up to room temperature. The work contains theoretical and experimental study on binary and ternary semiconductors. Also it illustrates the experimental results of thermoelectric properties of AG6Ge10P12 samples as well as the calculated effective mass, Fermi energy and their analysis throughout the temperature range between 80-300 K. 3 tabs.; 18 figs.; 57 refs

  15. Surface etching mechanism of carbon-doped Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material in fluorocarbon plasma

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Lanlan [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China); Graduate School of the Chinese Academy of Sciences, Beijing (China); Song, Sannian; Song, Zhitang; Li, Le; Guo, Tianqi; Cheng, Yan; Lv, Shilong; Wu, Liangcai; Liu, Bo; Feng, Songlin [Chinese Academy of Sciences, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Shanghai (China)

    2016-09-15

    Recently, carbon-doped Ge2Sb2Te5 (CGST) phase change material has been widely researched for being highly promising material for future phase change memory application. In this paper, the reactive-ion etching of CGST film in CF{sub 4}/Ar plasma is studied. Compared with GST, the etch rate of CGST is relatively lower due to the existence of carbon which reduce the concentration of F or CF{sub x} reactive radicals. It was found that Argon plays an important role in defining the sidewall edge acuity. Compared with GST, more physical bombardment is required to obtain vertical sidewall of CGST. The effect of fluorocarbon gas on the damage of the etched CGST film was also investigated. A Ge- and Sb-deficient layer with tens of nanometers was observed by TEM combining with XPS analysis. The reaction between fluorocarbon plasma and CGST is mainly dominated by the diffusion and consumption of reactive fluorine radicals through the fluorocarbon layer into the CGST substrate material. The formation of damage layer is mainly caused by strong chemical reactivity, low volatility of reaction compounds and weak ion bombardment. (orig.)

  16. Two-body hypercharge-exchange reactions in K-p and π+p interactions at 10 and 16 GeV/c

    International Nuclear Information System (INIS)

    Girtler, P.; Otter, G.; Sliwa, K.; Barnham, K.W.J.; Eason, R.M.; Newham, P.; Pollock, B.; Wells, J.; Mandl, F.; Markytan, M.

    1979-01-01

    Cross section values or upper limits are presented for twenty-five two-body hypercharge-exchange reactions in K - p and π + p interactions at 10 and 16 GeV/c. The 16 GeV/c results are compared with some predictions of line-reversal plus exchange-degenerate Regge poles, of SU(3) and of the additive quark model. Agreement is found in all cases. (author)

  17. Low Thermal Conductivity of Bulk Amorphous Si1- x Ge x Containing Nano-Sized Crystalline Particles Synthesized by Ball-Milling Process

    Science.gov (United States)

    Muthusamy, Omprakash; Nishino, Shunsuke; Ghodke, Swapnil; Inukai, Manabu; Sobota, Robert; Adachi, Masahiro; Kiyama, Makato; Yamamoto, Yoshiyuki; Takeuchi, Tsunehiro; Santhanakrishnan, Harish; Ikeda, Hiroya; Hayakawa, Yasuhiro

    2018-06-01

    Amorphous Si0.65Ge0.35 powder containing a small amount of nano-sized crystalline particles was synthesized by means of the mechanical alloying process. Hot pressing for 24 h under the pressure of 400 MPa at 823 K, which is below the crystallization temperature, allowed us to obtain bulk amorphous Si-Ge alloy containing a small amount of nanocrystals. The thermal conductivity of the prepared bulk amorphous Si-Ge alloy was extremely low, showing a magnitude of less than 1.35 Wm-1 K-1 over the entire temperature range from 300 K to 700 K. The sound velocity of longitudinal and transverse waves for the bulk amorphous Si0.65Ge0.35 were measured, and the resulting values were 5841 m/s and 2840 m/s, respectively. The estimated mean free path of phonons was kept at the very small value of ˜ 4.2 nm, which was mainly due to the strong scattering limit of phonons in association with the amorphous structure.

  18. Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

    International Nuclear Information System (INIS)

    Nie Tianxiao; Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin; Chen Zhigang; Zou Jin

    2011-01-01

    A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

  19. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  20. Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

    Directory of Open Access Journals (Sweden)

    Shoichi Kabuyanagi

    2016-01-01

    Full Text Available We discuss the impact of free carriers on the zone-center optical phonon frequency in germanium (Ge. By taking advantage of the Ge-on-insulator structure, we measured the Raman spectroscopy by applying back-gate bias. Phonon softening by accumulating holes in Ge film was clearly observed. This fact strongly suggests that the phonon softening in heavily-doped Ge is mainly attributed to the free carrier effect rather than the dopant atom counterpart. Furthermore, we propose that the free carrier effect on phonon softening is simply understandable from the viewpoint of covalent bonding modification by free carriers.

  1. Studies on the optoelectronic properties of the thermally evaporated tin-doped indium oxide nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Ko-Ying [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Lin, Liang-Da [Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China); Chang, Li-Wei [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Shih, Han C., E-mail: hcshih@mx.nthu.edu.tw [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, ROC (China); Institute of Materials Science and Nanotechnology, Chinese Culture University, Taipei 111, Taiwan, ROC (China)

    2013-05-15

    Indium oxide (In{sub 2}O{sub 3}) nanorods, nanotowers and tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods have been fabricated by thermal evaporation. The morphology, microstructure and chemical composition of these three nanoproducts are characterized by FE-SEM, HRTEM and XPS. To further investigate the optoelectronic properties, the I–V curves and cathodoluminescence (CL) spectra are measured. The electrical resistivity of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods are 1.32 kΩ, 0.65 kΩ and 0.063 kΩ, respectively. CL spectra of these three nanoproducts clearly indicate that tin-doped (Sn:In = 1:100) indium oxide (ITO) nanorods cause a blue shift. No doubt ITO nanorods obtain the highest performance among these three nanoproducts, and this also means that Sn-doped In{sub 2}O{sub 3} nanostructures would be the best way to enhance the optoelectronic properties. Additionally, the growing mechanism and the optoelectronic properties of these three nanostructures are discussed. This study is beneficial to the applications of In{sub 2}O{sub 3} nanorods, nanotowers and ITO nanorods in optoelectronic nanodevices.

  2. Iron doping of lithium niobate by thermal diffusion from thin film: study of the treatment effect

    Energy Technology Data Exchange (ETDEWEB)

    Ciampolillo, Maria Vittoria; Zaltron, Annamaria; Bazzan, Marco; Argiolas, Nicola; Sada, Cinzia [Universita di Padova (Italy); CNISM, Dipartimento di Fisica ' ' G. Galilei' ' , Padova (Italy); Mignoni, Sabrina; Fontana, Marc [Universite de Metz et Supelec, Laboratoire Materiaux Optiques, Photoniques et Systemes, UMR CNRS 7132, Metz (France)

    2011-07-15

    Thermal diffusion from thin film is one of the most widespread approaches to prepare iron doped regions in lithium niobate with limited size for photorefractive applications. In this work, we investigate the doping process with the aim of determining the best process conditions giving a doped region with the characteristics required for photorefractive applications. Six samples were prepared by changing the atmosphere employed in the diffusion treatment in order to obtain different combination of diffusion profiles and reduction degrees and also to check the effect of employing a wet atmosphere. The compositional, optical, and structural properties are then extensively characterized by combining Secondary ion Mass Spectrometry, UV, visible and IR spectrophotometry, High Resolution X-Rays Diffraction, and Micro-Raman Spectroscopy. Moreover, the sample topography was checked by Atomic Force Microscopy. An analysis of all our data shows that the best results are obtained performing a double step process, i.e. diffusion in oxidizing atmosphere and subsequent reduction at lower temperature in an hydrogen-containing atmosphere. (orig.)

  3. Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

    2012-01-01

    In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

  4. Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

    Directory of Open Access Journals (Sweden)

    Kenichi Miyazaki

    2016-05-01

    Full Text Available We investigated the effects of chromium (Cr and niobium (Nb co-doping on the temperature coefficient of resistance (TCR and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2 films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

  5. The Impact of HCl Precleaning and Sulfur Passivation on the Al2O3/Ge Interface in Ge Metal-Oxide-Semiconductor Capacitors

    International Nuclear Information System (INIS)

    Xue Bai-Qing; Chang Hu-Dong; Sun Bing; Wang Sheng-Kai; Liu Hong-Gang

    2012-01-01

    Surface treatment for Ge substrates using hydrogen chlorine cleaning and chemical passivation are investigated on AuTi/Al 2 O 3 /Ge metal-oxide-semiconductor capacitors. After hydrogen chlorine cleaning, a smooth Ge surface almost free from native oxide is demonstrated by atomic force microscopy and x-ray photoelectron spectroscopy observations. Passivation using a hydrogen chlorine solution is found to form a chlorine-terminated surface, while aqueous ammonium sulfide pretreatment results in a surface terminated by Ge-S bonding. Compared with chlorine-passivated samples, the sulfur-passivated ones show less frequency dispersion and better thermal stability based on capacitance-voltage characterizations. The samples with HCl pre-cleaning and (NH 4 ) 2 S passivation show less frequency dispersion than the HF pre-cleaning and (NH 4 ) 2 S passivated ones. The surface treatment process using hydrogen chlorine cleaning followed by aqueous ammonium sulfide passivation demonstrates a promising way to improve gate dielectric/Ge interface quality. (condensed matter: structure, mechanical and thermal properties)

  6. Effect of Ge Addition on the Optical Band Gap and Refractive Index of Thermally Evaporated As2Se3 Thin Films

    Directory of Open Access Journals (Sweden)

    Pankaj Sharma

    2008-01-01

    Full Text Available The present paper reports the effect of Ge addition on the optical band gap and refractive index of As2Se3 thin films. Thin films of As2Se3 and (As2Se390Ge10 were prepared by thermal evaporation technique at base pressure 10−4 Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to As2Se3. The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.

  7. Radiation-damage-assisted ferroelectric domain structuring in magnesium-doped lithium niobate

    Science.gov (United States)

    Jentjens, L.; Peithmann, K.; Maier, K.; Steigerwald, H.; Jungk, T.

    2009-06-01

    Irradiation of 5% magnesium-doped lithium niobate crystals (LiNbO3:Mg) with high-energy, low-mass 3He ions, which are transmitted through the crystal, changes the domain reversal properties of the material. This enables easier domain engineering compared to non-irradiated material and assists the formation of small-sized periodically poled domains in LiNbO3:Mg. Periodic domain structures exhibiting a width of ≈520 nm are obtained in radiation-damaged sections of the crystals. The ferroelectric poling behavior between irradiated and non-treated material is compared.

  8. Optical properties of Mn doped ZnO films and wires synthesized by thermal oxidation of ZnMn alloy

    International Nuclear Information System (INIS)

    Sima, M.; Mihut, L.; Vasile, E.; Sima, Ma.; Logofatu, C.

    2015-01-01

    Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn 2+ ions into the Zn 2+ site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn 2+ ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A 1 (LO) vibrational modes, from 482 and 567 cm −1 to 532 and 580 cm −1 , respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600–750 cm −1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cm −1 confirms the insertion of Mn 2+ ions in ZnO lattice. - Highlights: • Mn doped ZnO films and wires grown by thermal oxidation of ZnMn alloy • Incorporation of Mn 2+ ions into Zn 2+ site of ZnO lattice • Appearance of a strong Raman line in the spectral range 600–800 cm −1 at high Mn concentration • Compensation of the oxygen vacancy at higher Mn concentration in ZnO lattice

  9. Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2

    International Nuclear Information System (INIS)

    Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G.

    2006-01-01

    Germanium interactions are studied on HfO 2 surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO 2 . Germanium chemical vapor deposition at 870 K on HfO 2 produces a GeO x adhesion layer, followed by growth of semiconducting Ge 0 . PVD of 0.7 ML Ge (accomplished by thermally cracking GeH 4 over a hot filament) also produces an initial GeO x layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge 0 . Temperature programed desorption experiments of ∼1.0 ML Ge from HfO 2 at 400-1100 K show GeH 4 desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO 2 where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO 2 and SiO 2 allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO 2 surfaces that is demonstrated

  10. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    Energy Technology Data Exchange (ETDEWEB)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A., E-mail: alberto.tagliaferri@polimi.it [CNISM-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Nicotra, G. [IMM-CNR, Stradale Primosole 50, I-95121 Catania (Italy); Bollani, M. [CNR-IFN, LNESS, Via Anzani 42, I-22100 Como (Italy); Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F. [Dipartimento di Scienza dei Materiali and L-NESS, Università Milano-Bicocca, via Cozzi 53, I-20125 Milano (Italy); Capellini, G. [Department of Sciences at the Università Roma Tre, Via Vasca Navale 79, 00146 Roma (Italy); Isella, G. [CNISM, LNESS, Dipartimento di Fisica, Politecnico di Milano (Polo di Como), Via Anzani 42, I-22100 Como (Italy); Osmond, J. [ICFO–The Institute of Photonic Sciences, Av. Carl Friedrich Gauss, 3, E-08860 Castelldefels (Barcelona) (Spain)

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  11. High-throughput heterodyne thermoreflectance: Application to thermal conductivity measurements of a Fe-Si-Ge thin film alloy library

    Science.gov (United States)

    d'Acremont, Quentin; Pernot, Gilles; Rampnoux, Jean-Michel; Furlan, Andrej; Lacroix, David; Ludwig, Alfred; Dilhaire, Stefan

    2017-07-01

    A High-Throughput Time-Domain ThermoReflectance (HT-TDTR) technique was developed to perform fast thermal conductivity measurements with minimum user actions required. This new setup is based on a heterodyne picosecond thermoreflectance system. The use of two different laser oscillators has been proven to reduce the acquisition time by two orders of magnitude and avoid the experimental artefacts usually induced by moving the elements present in TDTR systems. An amplitude modulation associated to a lock-in detection scheme is included to maintain a high sensitivity to thermal properties. We demonstrate the capabilities of the HT-TDTR setup to perform high-throughput thermal analysis by mapping thermal conductivity and interface resistances of a ternary thin film silicide library FexSiyGe100-x-y (20 deposited by wedge-type multi-layer method on a 100 mm diameter sapphire wafer offering more than 300 analysis areas of different ternary alloy compositions.

  12. Operation of a five-pole superconducting wiggler in the DCI positron ring and design of the beamline

    International Nuclear Information System (INIS)

    Bazin, C.; Dubuisson, J.M.; Labeque, A.; Level, M.P.; Raoux, D.; Sommer, M.; Zyngier, H.; Chomillier, J.; Frouin, J.; Garreau, Y.; Loupias, G.; Tarbes, J.

    1989-01-01

    A five-pole superconducting wiggler has been installed in the DCI positron ring and operated without disturbing the machine characteristics at full energy (1.85 GeV) and maximum current (300 mA). Three beamlines have been built which feed six beam ports. The first two-crystal monochromator to be used for Compton scattering has been commissioned although the sagittal focusing has not yet been tested

  13. Thermal Expansion and Luminescent Properties of Triorthogermanates CaLa2- x Eu x Ge3O10 ( x = 0.0-0.6)

    Science.gov (United States)

    Lipina, O. A.; Surat, L. L.; Baklanova, Ya. V.; Berger, I. F.; Tyutyunnik, A. P.; Zubkov, V. G.

    2018-02-01

    Solid solutions CaLa2- x Eu x Ge3O10 ( x = 0.0-0.6, Δ x = 0.1) have been synthesized for the first time. The compounds are isostructural to CaLa2Ge3O10, they crystallize in the monoclinic system, space group P21/ c, Z = 4. The low-temperature X-ray diffraction studies have revealed the strain anisotropy of germanate CaLa2Ge3O10 crystal lattice in the temperature range 80-298 K, and the linear thermal expansion coefficients have been calculated. The optical properties of the activated phases have been studied, and the influence of the dopant concentration and the excitation wavelength on the luminescence characteristics of the synthesized compounds has been established.

  14. Low Thermal Conductivity of RE-Doped SrO(SrTiO3)1 Ruddlesden Popper Phase Bulk Materials Prepared by Molten Salt Method

    Science.gov (United States)

    Putri, Yulia Eka; Said, Suhana Mohd; Refinel, Refinel; Ohtaki, Michitaka; Syukri, Syukri

    2018-04-01

    The SrO(SrTiO3)1 (Sr2TiO4) Ruddlesden Popper (RP) phase is a natural superlattice comprising of alternately stacking perovskite-type SrTiO3 layers and rock salt SrO layers along the crystallographic c direction. This paper discusses the properties of the Sr2TiO4 and (La, Sm)-doped Sr2TiO4 RP phase synthesized via molten salt method, within the context of thermoelectric applications. A good thermoelectric material requires high electrical conductivity, high Seebeck coefficient and low thermal conductivity. All three conditions have the potential to be fulfilled by the Sr2TiO4 RP phase, in particular, the superlattice structure allows a higher degree of phonon scattering hence resulting in lowered thermal conductivity. In this work, the Sr2TiO4 RP phase is doped with Sm and La respectively, which allows injection of charge carriers, modification of its electronic structure for improvement of the Seebeck coefficient, and most significantly, reduction of thermal conductivity. The particles with submicron size allows excessive phonon scattering along the boundaries, thus reduces the thermal conductivity by fourfold. In particular, the Sm-doped sample exhibited even lower lattice thermal conductivity, which is believed to be due to the mismatch in the ionic radius of Sr and Sm. This finding is useful as a strategy to reduce thermal conductivity of Sr2TiO4 RP phase materials as thermoelectric candidates, by employing dopants of differing ionic radius.

  15. A simple model for the prediction of thermal conductivity of Ge2Sb2Te5 thin film

    International Nuclear Information System (INIS)

    Jin, Jae Sik

    2013-01-01

    A modified version of the Mayadas-Shatzkes (MS) model is proposed for the prediction of the thermal conductivity of both amorphous and crystalline of Ge 2 Sb 2 Te 5 (GST) phase-change materials at room temperature. The structural parameters of the original MS model are extended to describe the additional disorder scattering effects caused by the ternary components of the GST. The effect of disorder due to the alloy composition on the grain boundary scattering can be interpreted with the aid of thermal models. It is also found that for all phases of GST, the contribution of disorder scattering to the thermal resistance is nearly uniform. This is consistent with the fact that the GST phase changes without any destruction of the structural basis such as the building blocks.

  16. Oxygen-doped Sb{sub 4}Te phase change films for high-temperature data retention and low-power application

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yifeng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); School of Mathematics and Physics, Jiangsu Teachers University of Technology, Changzhou 213001 (China); Sun, Mingcheng [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China); Song, Sannian; Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Zhai, Jiwei, E-mail: apzhai@tongji.edu.cn [Functional Materials Research Laboratory, Tongji University, Shanghai 200092 (China)

    2013-02-25

    Highlights: Black-Right-Pointing-Pointer O-doped Sb{sub 4}Te phase-change films were reported. Black-Right-Pointing-Pointer The amorphous-to-crystalline transitions of O-doped Sb{sub 4}Te films were studied. Black-Right-Pointing-Pointer By doping oxygen, the stability of Sb{sub 4}Te films is improved greatly. Black-Right-Pointing-Pointer The resistance of the Sb{sub 4}Te films increases by doping oxygen. - Abstract: The amorphous-to-crystalline transitions of oxygen-doped Sb{sub 4}Te (STO) films are investigated by in situ film resistance measurements. The crystalline temperature and resistance of the oxygen-doped films increase. The analysis of X-ray diffractomer (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the films with doping of a small amount of oxygen atoms can refine the grain size and form oxide, improving the resistance and thermal stability of phase change films. Excessive oxygen in Sb{sub 4}Te will make Te separate, resulting in deteriorating the stability. As a result, STO2 film has the relatively high activation energy for crystallization. The 10-year lifetime is raised from 29 Degree-Sign C of undoped Sb{sub 4}Te film to 102 Degree-Sign C of STO3 film. Phase transition from amorphous state to crystalline state is observed at relatively lower power, compared with a device using Ge{sub 2}Sb{sub 2}Te{sub 5} film.

  17. Thermally conductive of nanofluid from surfactant doped polyaniline nanoparticle and deep eutectic ionic liquid

    Science.gov (United States)

    Siong, Chew Tze; Daik, Rusli; Hamid, Muhammad Azmi Abdul

    2014-09-01

    Nanofluid is a colloidal suspension of nano-size particles in a fluid. Spherical shape dodecylbenzenesulfonic acid doped polyaniline (DBSA-PANI) nanoparticles were synthesized via reverse micellar polymerization in isooctane with average size of 50 nm- 60 nm. The aim of study is to explore the possibility of using deep eutectic ionic liquid (DES) as a new base fluid in heat transfer application. DES was prepared by heating up choline chloride and urea with stirring. DES based nanofluids containing DBSA-PANI nanoparticles were prepared using two-step method. Thermal conductivity of nanofluids was measured using KD2 Pro Thermal Properties Analyzer. When incorporated with DBSA-PANI nanoparticles, DES with water was found to exhibit a bigger increase in thermal conductivity compared to that of the pure DES. The thermal conductivity of DES with water was increased by 4.67% when incorporated with 0.2 wt% of DBSA-PANI nanoparticles at 50°C. The enhancement in thermal conductivity of DES based nanofluids is possibly related to Brownian motion of nanoparticles as well as micro-convection of base fluids and also interaction between dopants and DES ions.

  18. Effect of nitrogen-doped graphene nanofluid on the thermal performance of the grooved copper heat pipe

    DEFF Research Database (Denmark)

    Mehrali, Mohammad; Sadeghinezhad, Emad; Azizian, Reza

    2016-01-01

    Thermal performance of a grooved heat pipe using aqueous nitrogen-doped graphene (NDG) nanofluids was analysed. This study in particular focused on the effect of varying NDG nanosheets concentrations, heat pipe inclination angles and input heating powers. The results indicated that the inclination...... observed for NDG nanofluid with concentration of 0.06wt%, inclination angle of θ=90° and a heating power of 120W in comparison to DI-water under the exact same condition. Additionally, the surface temperature distribution was decreased by employing NDG nanosheets, which can in return increase the thermal...... performance of a grooved heat pipe. The present investigation indicated that the thermal performance of the grooved heat pipe can be improved significantly by using NDG nanofluids....

  19. Highly efficient periodically poled KTP-isomorphs with large apertures and extreme domain aspect-ratios

    Science.gov (United States)

    Canalias, Carlota; Zukauskas, Andrius; Tjörnhamman, Staffan; Viotti, Anne-Lise; Pasiskevicius, Valdas; Laurell, Fredrik

    2018-02-01

    Since the early 1990's, a substantial effort has been devoted to the development of quasi-phased-matched (QPM) nonlinear devices, not only in ferroelectric oxides like LiNbO3, LiTaO3 and KTiOPO4 (KTP), but also in semiconductors as GaAs, and GaP. The technology to implement QPM structures in ferroelectric oxides has by now matured enough to satisfy the most basic frequency-conversion schemes without substantial modification of the poling procedures. Here, we present a qualitative leap in periodic poling techniques that allows us to demonstrate devices and frequency conversion schemes that were deemed unfeasible just a few years ago. Thanks to our short-pulse poling and coercive-field engineering techniques, we are able to demonstrate large aperture (5 mm) periodically poled Rb-doped KTP devices with a highly-uniform conversion efficiency over the whole aperture. These devices allow parametric conversion with energies larger than 60 mJ. Moreover, by employing our coercive-field engineering technique we fabricate highlyefficient sub-µm periodically poled devices, with periodicities as short as 500 nm, uniform over 1 mm-thick crystals, which allow us to realize mirrorless optical parametric oscillators with counter-propagating signal and idler waves. These novel devices present unique spectral and tuning properties, superior to those of conventional OPOs. Furthermore, our techniques are compatible with KTA, a KTP isomorph with extended transparency in the mid-IR range. We demonstrate that our highly-efficient PPKTA is superior both for mid-IR and for green light generation - as a result of improved transmission properties in the visible range. Our KTP-isomorph poling techniques leading to highly-efficient QPM devices will be presented. Their optical performance and attractive damage thresholds will be discussed.

  20. Color stable manganese-doped phosphors

    Science.gov (United States)

    Lyons, Robert Joseph [Burnt Hills, NY; Setlur, Anant Achyut [Niskayuna, NY; Deshpande, Anirudha Rajendra [Twinsburg, OH; Grigorov, Ljudmil Slavchev [Sofia, BG

    2012-08-28

    A process for preparing color stable Mn.sup.+4 doped phosphors includes providing a phosphor of formula I; A.sub.x[MF.sub.y]:Mn.sup.+4 I and contacting the phosphor in particulate form with a saturated solution of a composition of formula II in aqueous hydrofluoric acid; A.sub.x[MF.sub.y]; II wherein A is Li, Na, K, Rb, Cs, NR.sub.4 or a combination thereof; M is Si, Ge, Sn, Ti, Zr, Al, Ga, In, Sc, Y, La, Nb, Ta, Bi, Gd, or a combination thereof; R is H, lower alkyl, or a combination thereof; x is the absolute value of the charge of the [MF.sub.y] ion; and y is 5, 6 or 7. In particular embodiments, M is Si, Ge, Sn, Ti, Zr, or a combination thereof. A lighting apparatus capable of emitting white light includes a semiconductor light source; and a phosphor composition radiationally coupled to the light source, and which includes a color stable Mn.sup.+4 doped phosphor.