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Sample records for thermal chemical vapor

  1. Combustion chemical vapor desposited coatings for thermal barrier coating systems

    Energy Technology Data Exchange (ETDEWEB)

    Hampikian, J.M.; Carter, W.B. [Georgia Institute of Technology, Atlanta, GA (United States)

    1995-10-01

    The new deposition process, combustion chemical vapor deposition, shows a great deal of promise in the area of thermal barrier coating systems. This technique produces dense, adherent coatings, and does not require a reaction chamber. Coatings can therefore be applied in the open atmosphere. The process is potentially suitable for producing high quality CVD coatings for use as interlayers between the bond coat and thermal barrier coating, and/or as overlayers, on top of thermal barrier coatings.

  2. Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

    Science.gov (United States)

    Haven, Victor E.

    1999-01-01

    Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

  3. Chemical Vapor Detection with a Multispectral Thermal Imager

    National Research Council Canada - National Science Library

    Althouse, Mark L. G; Chang, Chein-I

    1991-01-01

    .... Real-time autonomous detection and alarm is also required. A detection system model by Warren, based on a Gaussian vapor concentration distribution is the basis for detection algorithms. Algorithms recursive in both time and spectral frequency have been derived using Kalman filter theory. Adaptive filtering is used for preprocessing clutter rejection. Various components of the detection system have been tested individually and an integrated system is now being fabricated.

  4. Photoluminescence characterization of the grain boundary thermal stability in chemical vapor deposition grown WS2

    Science.gov (United States)

    Cai, Shuang; Zhao, Weiwei; Zafar, Amina; Wu, Zhangting; Tao, Yi; Bi, Kedong; Wei, Zhiyong; Ni, Zhenhua; Chen, Yunfei

    2017-10-01

    Monolayer transition metal dichalcogenides (TMDs) such as MoS2 and WS2 have been considered as promising candidate materials in nanophotonic applications. However, the structure stability of TMDs based optoelectronic devices is highly sensitive to the working environment. Here we present a successive photoluminescence study of the thermal stability characterization of grain boundary in chemical vapor deposition grown monolayer WS2. Results show that PL intensity enhancement in grain boundaries can be significantly weakened during the annealing process. Transformation temperature starts around 210 °C, substantially lower than the surrounding non-grain-boundary area. First-principle calculations results show that the PL quenching of grain boundaries is caused by the increased structural defects induced by annealing process, which makes the transition of electrons more difficult. Our results provide a route for characterizing the structure stability of two dimensional (2D) semiconductors, calling for extra attention to nanophotonic device working condition.

  5. Synthesis of boron nitride nanotubes by Argon supported Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Ahmad, Pervaiz; Khandaker, Mayeen Uddin; Amin, Yusoff Mohd

    2015-03-01

    Thermal Chemical Vapor Deposition technique is modified with the use of Argon gas flow inside the chamber as an alternative for vacuum and orientation of one end closed quartz test tube. The use of Argon gas not only simplified the experimental set up, but also made it ~ 18 % cost effective compared to the conventional set up. Field Emission Scanning Electron Microscopy micrographs show straight and long BNNTs along with some cotton like morphologies. Transmission electron microscopy revealed bamboo like structure inside the tube and ~0.34 nm interlayer spacing for highly crystalline nature of boron nitride nanotubes. X-ray photon spectroscopy shows B 1s peak at 191.08 eV and N 1s peak at 398.78 eV that represents h-BN. Whereas, Raman spectrum indicates a major peak at ~1379.60 (cm-1) that correspond to E2g mode of h-BN.

  6. Thermal barrier coatings on gas turbine blades: Chemical vapor deposition (Review)

    Science.gov (United States)

    Igumenov, I. K.; Aksenov, A. N.

    2017-12-01

    Schemes are presented for experimental setups (reactors) developed at leading scientific centers connected with the development of technologies for the deposition of coatings using the CVD method: at the Technical University of Braunschweig (Germany), the French Aerospace Research Center, the Materials Research Institute (Tohoku University, Japan) and the National Laboratory Oak Ridge (USA). Conditions and modes for obtaining the coatings with high operational parameters are considered. It is established that the formed thermal barrier coatings do not fundamentally differ in their properties (columnar microstructure, thermocyclic resistance, thermal conductivity coefficient) from standard electron-beam condensates, but the highest growth rates and the perfection of the crystal structure are achieved in the case of plasma-chemical processes and in reactors with additional laser or induction heating of a workpiece. It is shown that CVD reactors can serve as a basis for the development of rational and more advanced technologies for coating gas turbine blades that are not inferior to standard electron-beam plants in terms of the quality of produced coatings and have a much simpler and cheaper structure. The possibility of developing a new technology based on CVD processes for the formation of thermal barrier coatings with high operational parameters is discussed, including a set of requirements for industrial reactors, high-performance sources of vapor precursors, and promising new materials.

  7. Materials characterization of rapid thermal chemical vapor deposition of titanium disilicide

    Science.gov (United States)

    Gladden-Green, Dannellia Banay

    Technological advancements of novel processes and materials involving refractory metal silicides for ultra large scale integration is of paramount importance to the semiconductor industry. Scaling of devices to meet the demands for increased packing density and speed requires such novel processes and materials. Rapid thermal chemical vapor deposition (RTCVD) of titanium disilicide (TiSisb2) was investigated in an effort to meet some of the challenges of ultra large scale integration (ULSI) technology. Selective RTCVD of TiSisb2 offers an optimal technological vehicle for achieving contacts to ultra-shallow junctions. Of all of the metal silicides, TiSisb2 has the lowest resistivity and meets the microelectronics demands for a thermally stable contact. The research results presented in this dissertation explores the mechanisms of selective RTCVD of TiSisb2 in terms of thermodynamic trends and kinetic driving forces for nucleation and growth. The present research addresses the qualitative and quantitative parameters that affect the controlling mechanisms for nucleation and therefore the results provide significant data and theoretical insights into a state-of-the-art process. Just as the fundamental building block in understanding the kinetic constraints of a process lie in the realm of thermodynamic exploration, understanding the complex processes involved in RTCVD TiSisb2 begin with characterization of the mechanisms governing thin film nucleation. In this work, the early stages of growth are investigated as they offer insight into how process parameters are optimized to render desired silicide film properties. Equilibrium simulations have been used to model the CVD reaction with very good trend indicating accuracy. Empirical investigations of CVD TiSisb2 took place in a low-pressure rapid-thermal environment using the SiHsb4 + TiClsb4 gas system on silicon (100) substrates. Secondary ion mass spectroscopy (SIMS) has been used to qualify the benefits of vacuum and

  8. Synthesis of boron nitride nanostructures from catalyst of iron compounds via thermal chemical vapor deposition technique

    Science.gov (United States)

    da Silva, Wellington M.; Ribeiro, Hélio; Ferreira, Tiago H.; Ladeira, Luiz O.; Sousa, Edésia M. B.

    2017-05-01

    For the first time, patterned growth of boron nitride nanostructures (BNNs) is achieved by thermal chemical vapor deposition (TCVD) technique at 1150 °C using a mixture of FeS/Fe2O3 catalyst supported in alumina nanostructured, boron amorphous and ammonia (NH3) as reagent gas. This innovative catalyst was synthesized in our laboratory and systematically characterized. The materials were characterized by X-ray diffraction (XRD), Raman spectroscopy, Fourier-transform infrared spectroscopy (FTIR), Thermogravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The X-ray diffraction profile of the synthesized catalyst indicates the coexistence of three different crystal structures showing the presence of a cubic structure of iron oxide and iron sulfide besides the gamma alumina (γ) phase. The results show that boron nitride bamboo-like nanotubes (BNNTs) and hexagonal boron nitride (h-BN) nanosheets were successfully synthesized. Furthermore, the important contribution of this work is the manufacture of BNNs from FeS/Fe2O3 mixture.

  9. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.; Li, J.P. (Univ. of Cincinnati, OH (United States))

    1992-08-28

    Rapid thermal chemical vapor deposition growth of [beta]-SiC ultrathin films on Si (100) was achieved using the carbonization reaction of the silicon substrate with C[sub 3]H[sub 8] gas. Growth rates of 0.5-2 nm s[sup -1] have been achieved at 1100-1300degC using C[sub 3]H[sub 8] flow rates of 7-9 standard cm[sup 3] min[sup -1]. X-ray and electron diffraction indicate single-crystal growth. Therefore nanometer-scale SiC films can be grown by controlling the reaction time to a few seconds. The activation energy at atmospheric pressure is 3.12 eV. The growth rate was found to decrease significantly at higher C[sub 3]H[sub 8] flow rates, leading to films of constant thickness beyond a certain critical reaction time. Using this regime of self-limiting growth, SiC films of 3-5 nm have been grown with relatively little sensitivity to the growth time. (orig.).

  10. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  11. A rapid fabrication of C/C composites by a thermal gradient chemical vapor infiltration method with vaporized kerosene as a precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jiping [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)]. E-mail: buickwang@hotmail.com; Qian Junmin [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Qiao Guanjun [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Jin Zhihao [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2007-01-15

    A thermal gradient, atmospheric pressure chemical vapor infiltration method with simultaneous vaporized kerosene as a precursor for rapid fabrication of C/C composites was studied. By this method, carbon felts (bulk density {approx}0.2 g cm{sup -3}) were densified to C/C composites with density of 1.67 and 1.71 g cm{sup -3} when prepared at 1050 and 1150 deg. C for 6 h, respectively. X-ray diffraction result indicates that the composites have a strong ability to graphitize and the higher deposition temperature leads to the increased graphitization degree. Polarized light microscope and scanning electron microscope images reveal that fibers of the composites prepared for 6 h are surrounded by ring-shaped pyrocarbon matrix with a thickness of {approx}20 {mu}m, and that the matrix is delaminated to 4-6 layer-like regions. The deposition process is analyzed by dividing the reactor into four regions associated with specific functions and the reasons for the rapid fabrication are proposed as the short convection and diffusion path for the precursor and the existing of thermal gradient across the preform.

  12. Thermal conductivity of amorphous and nanocrystalline silicon films prepared by hot-wire chemical-vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jugdersuren, B.; Kearney, B. T.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Chervin, C. N.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2017-07-01

    We report 3..omega.. thermal conductivity measurements of amorphous and nanocrystalline silicon thin films from 85 to 300 K prepared by hot-wire chemical-vapor deposition, where the crystallinity of the films is controlled by the hydrogen dilution during growth. The thermal conductivity of the amorphous silicon film is in agreement with several previous reports of amorphous silicon prepared by a variety of deposition techniques. The thermal conductivity of the as-grown nanocrystalline silicon film is 70% higher and increases 35% more after an anneal at 600 degrees C. They all have similarly weak temperature dependence. Structural analysis shows that the as-grown nanocrystalline silicon is approximately 60% crystalline, nanograins and grain boundaries included. The nanograins, averaging 9.1 nm in diameter in the as-grown film, are embedded in an amorphous matrix. The grain size increases to 9.7 nm upon annealing, accompanied by the disappearance of the amorphous phase. We extend the models of grain boundary scattering of phonons with two different non-Debye dispersion relations to explain our result of nanocrystalline silicon, confirming the strong grain size dependence of heat transport for nanocrystalline materials. However, the similarity in thermal conductivity between amorphous and nanocrystalline silicon suggests the heat transport mechanisms in both structures may not be as dissimilar as we currently understand.

  13. Optical and structural properties of ZnO hexagonal rods prepared by thermal chemical vapor deposition technique

    Directory of Open Access Journals (Sweden)

    A Reyhani

    2014-11-01

    Full Text Available In this research, ZnO nanostructure hexagonal pyramid rods with high optical and structural quality were synthesized by the simple thermal chemical vapor deposition of Zn powder without a metal catalyst. Surface morphologies were characterized by scanning electron microscopy (SEM. XRD analyses demonstrated that ZnO hexagonal pyramid rods had a wurtzite structure with the orientation of (002. Investigation of optical properties of samples by photoluminescence spectrum exhibited a sharp UV emission peak at 380nm. The quality and composition of the ZnO pyramid rods were characterized using the Fourier transform infrared spectrum (FTIR at room temperature. In addition, the growth mechanism of ZnO hexagonal rods is also briefly discussed.

  14. Vaporization or Chemical Reaction: Which controls the fate of contaminants treated by in situ thermal remediation?

    Science.gov (United States)

    Thermal remediation technologies, which includes steam enhanced extraction, electrical resistance heating, and thermal conductive heating, have been developed based on technologies employed by the enhanced oil recovery industry. Although mobilization and/or volatilization of con...

  15. High Temperature Nanocomposites For Nuclear Thermal Propulsion and In-Space Fabrication by Hyperbaric Pressure Laser Chemical Vapor Deposition

    Science.gov (United States)

    Maxwell, J. L.; Webb, N. D.; Espinoza, M.; Cook, S.; Houts, M.; Kim, T.

    Nuclear Thermal Propulsion (NTP) is an indispensable technology for the manned exploration of the solar system. By using Hyperbaric Pressure Laser Chemical Vapor Deposition (HP-LCVD), the authors propose to design and build a promising next-generation fuel element composed of uranium carbide UC embedded in a latticed matrix of highly refractory Ta4HfC5 for an NTP rocket capable of sustaining temperatures up to 4000 K, enabling an Isp of up to 1250 s. Furthermore, HP-LCVD technology can also be harnessed to enable 3D rapid prototyping of a variety of materials including metals, ceramics and composites, opening up the possibility of in-space fabrication of components, replacement parts, difficult-to-launch solar sails and panels and a variety of other space structures. Additionally, rapid prototyping with HP-LCVD makes a feasible "live off the land" strategy of interplanetary and interstellar exploration ­ the precursors commonly used in the technology are found, often in abundance, on other solar system bodies either as readily harvestable gas (e.g. methane) or as a raw material that could be converted into a suitable precursor (e.g. iron oxide into ferrocene on Mars).

  16. Chemical vapor deposition and analysis of thermally insulating ZrO{sub 2} layers on injection molds

    Energy Technology Data Exchange (ETDEWEB)

    Atakan, Burak; Khlopyanova, Victoria; Mausberg, Simon; Kandzia, Adrian; Pflitsch, Christian [Thermodynamik (IVG) and Cenide, Universitaet Duisburg-Essen, Lotharstr. 1, 47057 Duisburg (Germany); Mumme, Frank [Kunststoff-Institut Luedenscheid, Karolinenstrasse 8, 58507 Luedenscheid (Germany)

    2015-07-15

    High quality injection molding requires a precise control of cooling rates. Thermal barrier coating (TBC) of zirconia with a thickness of 20-40 μm on polished stainless steel molds could provide the necessary insulating effect. This paper presents results of zirconia deposition on stainless steel substrates using chemical vapor deposition (CVD) aiming to provide the process parameters for the deposition of uniform zirconia films with such a thickness. The deposition was performed with zirconium (IV) acetylacetonate (Zr(C{sub 5}H{sub 7}O{sub 2}){sub 4}) as precursor and synthetic air as co-reactant, which allows deposition at temperatures below 600 C. The experiments were carried out in a hot-wall reactor at pressures between 7.5 mbar and 500 mbar and in a temperature range from 450 C to 600 C. Important growth parameters were characterized and growth rates between 1 and 2.5 μm/h were achieved. Thick and well adhering zirconia layers of 38 μm could be produced on steel within 40 h. The transient heat transfer rate upon contact with a hot surface was also evaluated experimentally with the thickest coatings. These exhibit a good TBC performance. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yih, P.H.; Li, J.P.; Steckl, A.J. (Univ. of Cincinnati, OH (United States). Dept. of Electrical and Computer Engineering)

    1994-03-01

    SiC/Si heterojunction diodes have been fabricated by two different rapid thermal chemical vapor deposition (RTCVD) processes: a localized self-selective growth and blanket growth. The self-selective growth of crystalline cubic ([beta]) SiC was obtained by propane carbonization of the Si substrate in regions unprotected by an SiO[sub 2] layer, producing planar diodes. Mesa diodes were fabricated using the blanket growth of polycrystalline [beta]-SiC produced by the decomposition of methylsilane (CH[sub 3]SiH[sub 3]). The SiC/Si heterojunction diodes show good rectifying properties for both device structures. Reverse breakdown voltage of 50 V was obtained with the self-selective SiC/Si diode. The mesa diodes exhibited even higher breakdown voltages (V[sub br]) of 150 V and excellent ideality factors of 1.06 at 25 C. The high V[sub br] and good forward rectifying characteristics indicate that the SiC/Si heterojunction diode represents a promising approach for the fabrication of wide-gap emitter SiC/Si heterojunction bipolar transistors.

  18. Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application

    OpenAIRE

    Ikuo Kurachi; Kentaro Yoshioka

    2016-01-01

    An atmospheric pressure chemical vapor deposition (AP-CVD) system has been newly developed for boron silicate glass (BSG) film deposition dedicating to solar cell manufacturing. Using the system, thermal boron diffusion from the BSG film is investigated and confirmed in terms of process stability for surface property before BSG deposition and BSG thickness. No degradation in carrier lifetime is also confirmed. A boron diffusion simulator has been newly developed and demonstrated for optimizat...

  19. Zno Micro/Nanostructures Grown on Sapphire Substrates Using Low-Temperature Vapor-Trapped Thermal Chemical Vapor Deposition: Structural and Optical Properties

    Directory of Open Access Journals (Sweden)

    Po-Sheng Hu

    2017-12-01

    Full Text Available In this research, the Zn(C5H7O22·xH2O-based growth of ZnO micro/nanostructures in a low temperature, vapor-trapped chemical vapor deposition system was attempted to optimize structural and optical properties for potential biomedical applications. By trapping in-flow gas molecules and Zinc vapor inside a chamber tube by partially obstructing a chamber outlet, a high pressure condition can be achieved, and this experimental setup has the advantages of ease of synthesis, being a low temperature process, and cost effectiveness. Empirically, the growth process proceeded under a chamber condition of an atmospheric pressure of 730 torr, a controlled volume flow rate of input gas, N2/O2, of 500/500 Standard Cubic Centimeters per Minute (SCCM, and a designated oven temperature of 500 °C. Specifically, the dependence of structural and optical properties of the structures on growth duration and spatially dependent temperature were investigated utilizing scanning electron microscopy, X-ray diffraction (XRD, photoluminescence (PL, and ultraviolet-visible transmission spectroscopy. The experimental results indicate that the grown thin film observed with hexagonal structures and higher structural uniformity enables more prominent structural and optical signatures. XRD spectra present the dominant peaks along crystal planes of (002 and (101 as the main direction of crystallization. In addition, while the structures excited with laser wavelength of 325 nm emit a signature radiation around 380 nm, an ultraviolet lamp with a wavelength of 254 nm revealed distinctive photoluminescence peaks at 363.96 nm and 403.52 nm, elucidating different degrees of structural correlation as functions of growth duration and the spatial gradient of temperature. Transmittance spectra of the structures illustrate typical variation in the wavelength range of 200 nm to 400 nm, and its structural correlation is less significant when compared with PL.

  20. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  1. Chemical vapor infiltration process modeling and optimization

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P. [Oak Ridge National Lab., TN (United States); Matlin, W.M. [Tennessee Univ., Knoxville, TN (United States). Dept. of Materials Science and Engineering

    1995-12-31

    Chemical vapor infiltration is a unique method for preparing continuous fiber ceramic composites that spares the strong but relatively fragile fibers from damaging thermal, mechanical, and chemical degradation. The process is relatively complex and modeling requires detailed phenomenological knowledge of the chemical kinetics and mass and heat transport. An overview of some of the current understanding and modeling of CVI and examples of efforts to optimize the processes is given. Finally, recent efforts to scale-up the process to produce tubular forms are described.

  2. Chemical vapor deposition of sialon

    Science.gov (United States)

    Landingham, R.L.; Casey, A.W.

    A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

  3. Overview of chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

    1993-06-01

    Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

  4. Use of the Thermal Chemical Vapor Deposition to Fabricate Light-Emitting Diodes Based on ZnO Nanowire/p-GaN Heterojunction

    Directory of Open Access Journals (Sweden)

    Sheng-Po Chang

    2011-01-01

    Full Text Available The fabrication and characteristics of grown ZnO nanowire/p-GaN heterojunction light-emitting diodes are reported. Vertically aligned ZnO nanowire arrays were grown on a p-GaN substrate by thermal chemical vapor deposition in quartz tube. The rectifying current-voltage characteristics indicate that a p-n junction was formed with a heterostructure of n-ZnO nanowire/p-GaN. The room temperature electroluminescent emission peak at 425 nm was attributed to the band offset at the interface between the n-ZnO nanowire and p-GaN and to defect-related emission from GaN; it was also found that the there exist the yellow band in the hetrojunction. It would be attributed to the deep defect level in the heterojunction.

  5. From Amorphous to Nanocrystalline: The Effect of Nanograins in Amorphous Matrix on the Thermal Conductivity of Hot-Wire Chemical-Vapor Deposited Silicon Films

    Energy Technology Data Exchange (ETDEWEB)

    Nemeth, William M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kearney, B. T. [Naval Research Laboratory; Jugdersuren, B. [Sotera Defense Solutions Inc.; Queen, D. R. [Naval Research Laboratory; Metcalf, Thomas H. [Naval Research Laboratory; Culbertson, J. C. [Naval Research Laboratory; Desario, P. A. [Naval Research Laboratory; Stroud, R. M. [Naval Research Laboratory; Wang, Q. [Formerly NREL; Liu, Xiao [Naval Research Laboratory

    2017-12-28

    We have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume fraction is determined by the hydrogen (H2) dilution ratio to the processing silane gas (SiH4), R=H2/SiH4. We varied R from 1 to 10, where the films transform from amorphous for R < 3 to mostly nanocrystalline for larger R. Structural analyses show that the nanograins, averaging from 2 to 9nm in sizes with increasing R, are dispersed in the amorphous matrix. The crystalline volume fraction increases from 0 to 65% as R increases from 1 to 10. The thermal conductivities of the two amorphous silicon films are similar and consistent with the most previous reports with thicknesses no larger than a few um deposited by a variety of techniques. The thermal conductivities of the three nanocrystalline silicon films are also similar, but are about 50-70% higher than those of their amorphous counterparts. The heat conduction in nanocrystalline silicon films can be understood as the combined contribution in both amorphous and nanocrystalline phases, where increased conduction through improved nanocrystalline percolation path outweighs increased interface scattering between silicon nanocrystals and the amorphous matrix.

  6. From amorphous to nanocrystalline: the effect of nanograins in an amorphous matrix on the thermal conductivity of hot-wire chemical-vapor deposited silicon films

    Science.gov (United States)

    Kearney, B. T.; Jugdersuren, B.; Queen, D. R.; Metcalf, T. H.; Culbertson, J. C.; Desario, P. A.; Stroud, R. M.; Nemeth, W.; Wang, Q.; Liu, Xiao

    2018-02-01

    We have measured the thermal conductivity of amorphous and nanocrystalline silicon films with varying crystalline content from 85 K to room temperature. The films were prepared by the hot-wire chemical-vapor deposition, where the crystalline volume fraction is determined by the hydrogen (H2) dilution ratio to the processing silane gas (SiH4), R  =  H2/SiH4. We varied R from 1 to 10, where the films transform from amorphous for R  conductivities of the two amorphous silicon films are similar and consistent with the most previous reports with thicknesses no larger than a few μm deposited by a variety of techniques. The thermal conductivities of the three nanocrystalline silicon films are also similar, but are about 50–70% higher than those of their amorphous counterparts. The heat conduction in nanocrystalline silicon films can be understood as the combined contribution in both amorphous and nanocrystalline phases, where increased conduction through improved nanocrystalline percolation path outweighs increased interface scattering between silicon nanocrystals and the amorphous matrix.

  7. Synthesis, Characterization and Growth Mechanism of ZnO Nano-flower by Thermal Chemical Vapor Deposition Method at Low Deposition Temperature

    Science.gov (United States)

    Hartini, A. R.; Amizam, S.; Mamat, M. H.; Abdullah, S.; Rusop, M.

    2008-05-01

    Photoluminescence and morphology studies of Zinc Oxide (ZnO) thin films prepared by using Thermal Chemical Vapor Deposition (Thermal-CVD) were investigated. The ZnO compound was synthesized from zinc acetate dehydrate which act as a starting material to form the ZnO thin films. It was deposited on silicon with low deposition temperature ranging from 400-600 °C with Au as a catalyst assisted. Surface morphology of the samples was examined by Scanning Electron Microscope and photoluminescence properties were studied using Photoluminescence Spectrometer. The surface morphologies of the ZnO nano-flower structure was obviously obtained at deposition temperature of 400 °C. The individual nano-rods diameter of nano-flower is about 100-350 nm, but the end of nano-rods are very sharp which is the size is less than 50 nm. Possible growth mechanism of ZnO nano-flower also discussed. Room temperature PL spectra from the ZnO nano-flower revealed a strong UV emission and broad green emission. This result is very useful for sensor, probe tip and light emitter applications.

  8. The Surface Interface Characteristics of Vertically Aligned Carbon Nanotube and Graphitic Carbon Fiber Arrays Grown by Thermal and Plasma Enhanced Chemical Vapor Deposition

    Science.gov (United States)

    Delzeit, Lance; Nguyen, Cattien; Li, Jun; Han, Jie; Meyyappan, M.

    2002-01-01

    The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.

  9. Study of using aqueous NH{sub 3} to synthesize GaN nanowires on Si(1 1 1) by thermal chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saron, K.M.A., E-mail: kamalmohammedabdalla@yahoo.com [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, Penang 11800 (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia, Penang 11800 (Malaysia)

    2013-03-20

    Highlights: ► This study presents a facile, low cost and safe method to synthesize high quality GaN NWs, by using NH{sub 3} solution as N source. ► Moderating the N{sub 2} flow rate improved the crystalline quality of the NWs and also produced zigzag shaped NWs. ► Raman spectra showed that the synthesized GaN NWs had hexagonal wurtzite structures as a result of increased tensile stress. ► By moderating N{sub 2} flow, strong NBE emission peaks at about 364 nm and YB is subsided. -- Abstract: High-quality GaN nanowires (NWs) and zigzag-shaped NWs were grown on catalyst-free Si(1 1 1) substrate by thermal chemical vapor deposition (TCVD). Gallium (Ga) metal and aqueous NH{sub 3} solution are used as a source of materials. Ga vapor was directly reacts with gaseous NH{sub 3} under controlled nitrogen flow at 1050 °C. Scanning electron microscopy (SEM) images showed that the morphology of GaN displayed various densities of NWs and zigzag NWs depending on the gas flow rate, and increased nitrogen flow rate caused density reduction. The GaN NWs exhibited clear X-ray diffraction analysis (XRD) peaks that corresponded to GaN with hexagonal wurtzite structures. The photoluminescence spectra showed that the ultraviolet band emission of GaN NWs had a strong near band-edge emission (NBE) at 361–367 nm. Yellow band emissions were observed at low and high flow rates due to nitrogen and Ga vacancies, respectively. Moderate N{sub 2} flow resulted in a strong NBE emission and a high optical quality of the NWs. This study shows the possibility of low-cost synthesis of GaN nanostructures on Si wafers using aqueous NH{sub 3} solution.

  10. Effects of the gas feeding method on the properties of 3C-SiC/Si(111) grown by rapid thermal chemical vapor deposition

    CERN Document Server

    Shim, H W; Suh, E K

    1998-01-01

    High-quality crystalline 3C-SiC thin films are grown by rapid thermal chemical vapor deposition (RTCVD) on Si(111) by using two different growth processes. The films are grown along the [111] direction at 1200 .deg. C. The quality of the films are investigated by X-ray diffraction, transmission electron microscopy, and transmission electron diffraction. The SiC film grown by flowing the tetramethylsilane (TMS) gas before heating the substrate up to the growth temperature does not contain many voids at the SiC/Si interface, while the SiC grown by heating the substrate before supplying the TMS gas possesses many voids at the interface. The unintentionally doped SiC film grown by gas flow before heating the substrate appears to be n-type with a carrier concentration of 1.48 x 10 sup 1 sup 6 cm sup - sup 3 , a electron mobility of 884 cm sup 2 /V centre dot s, and a resistivity of 0.462 OMEGA centre dot cm. The physical properties, such as the electrical properties, the surface morphology, and the crystallinity, ...

  11. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Arata, E-mail: a.watanabe.106@nitech.jp; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, Takashi, E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  12. Chemical vapor deposited fiber coatings and chemical vapor infiltrated ceramic matrix composites

    Energy Technology Data Exchange (ETDEWEB)

    Kmetz, M.A.

    1992-01-01

    Conventional Chemical Vapor Deposition (CVD) and Organometallic Chemical Vapor Deposition (MOCVD) were employed to deposit a series of interfacial coatings on SiC and carbon yarn. Molybdenum, tungsten and chromium hexacarbonyls were utilized as precursors in a low temperature (350[degrees]C) MOCVD process to coat SiC yarn with Mo, W and Cr oxycarbides. Annealing studies performed on the MoOC and WOC coated SiC yarns in N[sub 2] to 1,000[degrees]C establish that further decomposition of the oxycarbides occurred, culminating in the formation of the metals. These metals were then found to react with Si to form Mo and W disilicide coatings. In the Cr system, heating in N[sub 2] above 800[degrees]C resulted in the formation of a mixture of carbides and oxides. Convention CVD was also employed to coat SiC and carbon yarn with C, Bn and a new interface designated BC (a carbon-boron alloy). The coated tows were then infiltrated with SiC, TiO[sub 2], SiO[sub 2] and B[sub 4]C by a chemical vapor infiltration process. The B-C coatings were found to provide advantageous interfacial properties over carbon and BN coatings in several different composite systems. The effectiveness of these different coatings to act as a chemically inert barrier layer and their relationship to the degree of interfacial debonding on the mechanical properties of the composites were examined. The effects of thermal stability and strength of the coated fibers and composites were also determined for several difference atmospheres. In addition, a new method for determining the tensile strength of the as-received and coated yarns was also developed. The coated fibers and composites were further characterized by AES, SEM, XPS, IR and X-ray diffraction analysis.

  13. Enhanced Photoluminescence and Raman Properties of Al-Doped ZnO Nanostructures Prepared Using Thermal Chemical Vapor Deposition of Methanol Assisted with Heated Brass

    OpenAIRE

    Tamil Many K Thandavan; Siti Meriam Abdul Gani; Chiow San Wong; Roslan Md Nor

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as ...

  14. Automated semiconductor vacuum chemical vapor deposition facility

    Science.gov (United States)

    1982-01-01

    A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

  15. Nuclear vapor thermal reactor propulsion technology

    Energy Technology Data Exchange (ETDEWEB)

    Maya, I.; Diaz, N.J.; Dugan, E.T.; Watanabe, Y. (Innovative Nuclear Space Power and Propulsion Institute, University of Florida, Gainesville, Florida 32611 (United States)); McClanahan, J.A.; Wen-Hsiung Tu; Carman, R.L. (Rocketdyne Division/Rockwell International Corporation, P.O. Box 7922, Canoga Park, California 91309-7922 (United States))

    1993-01-20

    The conceptual design of a nuclear rocket based on the vapor core reactor is presented. The Nuclear Vapor Thermal Rocket (NVTR) offers the potential for a specific impulse of 1000 to 1200 s at thrust-to-weight ratios of 1 to 2. The design is based on NERVA geometry and systems with the solid fuel replaced by uranium tetrafluoride (UF[sub 4]) vapor. The closed-loop core does not rely on hydrodynamic confinement of the fuel. The hydrogen propellant is separated from the UF[sub 4] fuel gas by graphite structure. The hydrogen is maintained at high pressure ([similar to]100 atm), and exits the core at 3,100 K to 3,500 K. Zirconium carbide and hafnium carbide coatings are used to protect the hot graphite from the hydrogen. The core is surrounded by beryllium oxide reflector. The nuclear reactor core has been integrated into a 75 klb engine design using an expander cycle and dual turbopumps. The NVTR offers the potential for an incremental technology development pathway to high performance gas core reactors. Since the fuel is readily available, it also offers advantages in the initial cost of development, as it will not require major expenditures for fuel development.

  16. Making Ceramic Fibers By Chemical Vapor

    Science.gov (United States)

    Revankar, Vithal V. S.; Hlavacek, Vladimir

    1994-01-01

    Research and development of fabrication techniques for chemical vapor deposition (CVD) of ceramic fibers presented in two reports. Fibers of SiC, TiB2, TiC, B4C, and CrB2 intended for use as reinforcements in metal-matrix composite materials. CVD offers important advantages over other processes: fibers purer and stronger and processed at temperatures below melting points of constituent materials.

  17. Chemical vapor infiltration in single fiber bundles

    Energy Technology Data Exchange (ETDEWEB)

    Devlin, D.J.; Barbero, R.S.; Currier, R.P.

    1990-01-01

    Chemical vapor infiltration (CVI) in single fiber bundles is studied under isothermal conditions. Understanding infiltration dynamics in single bundles is essential to process design and modeling efforts. Deposition of pyrolytic carbon in carbon-fiber bundles is chosen as the experimental system, with densification data obtained from thermogravimetric analysis. Data are then compared to predictions from a recently proposed CVI model for fiber bundle densification. 10 refs., 5 figs., 1 tab.

  18. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  19. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  20. Study the Effect of Annealing Temperature on Optical and Structural Properties of Zinc Oxide Thin Film Prepared by Thermal Chemical Vapor Deposition

    Science.gov (United States)

    Adawiah, R.; Rafaie, H. A.; Rusop, M.

    2009-06-01

    Zinc oxide (ZnO) thin films deposited on silicon and glass substrate were prepared using chemical vapor deposition (CVD) method utilizing zinc acetate dihydrate as the zinc sources. The deposited film then annealed at 300° C to 500° C for 1 hour. The optical and structural properties of ZnO thin films were characterized using photoluminescence (PL) and Scanning Electron Microscopy (SEM) respectively. SEM images show that the ZnO thin film on silicon substrate formed unique morphology of flower-like and ball-shaped structures at annealing temperature 300° C and 400° C. Increasing annealing temperature to 450° C for ZnO deposited on glass substrate had increased the grain size of particle which implies the improvement of crystalline grain of thin film. PL results observed that the defect of oxygen vacancy decreased after annealing process for films deposited on silicon substrate. The blue peak emission at 437 nm appears only on the glass substrate. Based on the highest PL intensity value, the optimum annealing temperature for silicon and glass substrate is 350° C and 450° C respectively.

  1. Advances in modeling of chemical vapor infiltration for tube fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

    1998-04-01

    The forced flow/thermal gradient chemical vapor infiltration process (FCVI) can be used for fabrication of tube-shaped components of ceramic matrix composites. Recent experimental work at Oak Ridge National Laboratory (ORNL) includes process and materials development studies using a small tube reactor. Use of FCVI for this geometry involves significant changes in fixturing as compared to disk-shaped preforms previously fabricated. The authors have used their computer model of the CVI process to simulate tube densification and to identify process modifications that will decrease processing time. This report presents recent model developments and applications.

  2. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Matlin, W.M. [Univ. of Tennessee, Knoxville, TN (United States); Stinton, D.P.; Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1995-08-01

    A two-step forced chemical vapor infiltration process was developed that reduced infiltration times for 4.45 cm dia. by 1.27 cm thick Nicalon{sup +} fiber preforms by two thirds while maintaining final densities near 90 %. In the first stage of the process, micro-voids within fiber bundles in the cloth were uniformly infiltrated throughout the preform. In the second stage, the deposition rate was increased to more rapidly fill the macro-voids between bundles within the cloth and between layers of cloth. By varying the thermal gradient across the preform uniform infiltration rates were maintained and high final densities achieved.

  3. Fabrication of fiber-reinforced composites by chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; McLaughlin, J.C. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.; Probst, K.J.; Anderson, T.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering; Starr, T.L. [Georgia Inst. of Tech., Atlanta, GA (United States). Dept. of Materials Science and Engineering

    1997-12-01

    Silicon carbide-based heat exchanger tubes are of interest to energy production and conversion systems due to their excellent high temperature properties. Fiber-reinforced SiC is of particular importance for these applications since it is substantially tougher than monolithic SiC, and therefore more damage and thermal shock tolerant. This paper reviews a program to develop a scaled-up system for the chemical vapor infiltration of tubular shapes of fiber-reinforced SiC. The efforts include producing a unique furnace design, extensive process and system modeling, and experimental efforts to demonstrate tube fabrication.

  4. Chemical vapor deposition of group IIIB metals

    Science.gov (United States)

    Erbil, A.

    1989-11-21

    Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

  5. The Influence of Chemical Composition on LNG Pool Vaporization

    OpenAIRE

    Yu Zhidong

    2017-01-01

    A model is used to examine the influence of chemical composition on the vaporization rate of LNG during spreading. Calculations have been performed whereby the vaporization rate of the LNG mixtures has been compared to the vaporization of pure methane under the initial conditions. The detailed results indicate that the vaporization rate LNG mixture is different to that of pure methane. LNG as the liquid mixture gets rich in ethane and isobaric latent heat increases rapidly, leading to the rat...

  6. Chemical agent simulant release from clothing following vapor exposure.

    Science.gov (United States)

    Feldman, Robert J

    2010-02-01

    Most ambulatory victims of a terrorist chemical attack will have exposure to vapor only. The study objective was to measure the duration of chemical vapor release from various types of clothing. A chemical agent was simulated using methyl salicylate (MeS), which has similar physical properties to sulfur mustard and was the agent used in the U.S. Army's Man-In-Simulant Test (MIST). Vapor concentration was measured with a Smiths Detection Advanced Portable Detector (APD)-2000 unit. The clothing items were exposed to vapor for 1 hour in a sealed cabinet; vapor concentration was measured at the start and end of each exposure. Clothing was then removed and assessed every 5 minutes with the APD-2000, using a uniform sweep pattern, until readings remained 0. Concentration and duration of vapor release from clothing varied with clothing composition and construction. Lightweight cotton shirts and jeans had the least trapped vapor; down outerwear, the most. Vapor concentration near the clothing often increased for several minutes after the clothing was removed from the contaminated environment. Compression of thick outerwear released additional vapor. Mean times to reach 0 ranged from 7 minutes for jeans to 42 minutes for down jackets. This simulation model of chemical vapor release demonstrates persistent presence of simulant vapor over time. This implies that chemical vapor may be released from the victims' clothing after they are evacuated from the site of exposure, resulting in additional exposure of victims and emergency responders. Insulated outerwear can release additional vapor when handled. If a patient has just moved to a vapor screening point, immediate assessment before additional vapor can be released from the clothing can lead to a false-negative assessment of contamination.

  7. Waterproof Silicone Coatings of Thermal Insulation and Vaporization Method

    Science.gov (United States)

    Cagliostro, Domenick E. (Inventor)

    1999-01-01

    Thermal insulation composed of porous ceramic material can be waterproofed by producing a thin silicone film on the surface of the insulation by exposing it to volatile silicone precursors at ambient conditions. When the silicone precursor reactants are multi-functional siloxanes or silanes containing alkenes or alkynes carbon groups higher molecular weight films can be produced. Catalyst are usually required for the silicone precursors to react at room temperature to form the films. The catalyst are particularly useful in the single component system e.g. dimethylethoxysilane (DNMS) to accelerate the reaction and decrease the time to waterproof and protect the insulation. In comparison to other methods, the chemical vapor technique assures better control over the quantity and location of the film being deposited on the ceramic insulation to improve the waterproof coating.

  8. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  9. Characterization of Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    Jesser, W. A.

    1998-01-01

    A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

  10. Chemical Vapor Deposition at High Pressure in a Microgravity Environment

    Science.gov (United States)

    McCall, Sonya; Bachmann, Klaus; LeSure, Stacie; Sukidi, Nkadi; Wang, Fuchao

    1999-01-01

    In this paper we present an evaluation of critical requirements of organometallic chemical vapor deposition (OMCVD) at elevated pressure for a channel flow reactor in a microgravity environment. The objective of using high pressure is to maintain single-phase surface composition for materials that have high thermal decomposition pressure at their optimum growth temperature. Access to microgravity is needed to maintain conditions of laminar flow, which is essential for process analysis. Based on ground based observations we present an optimized reactor design for OMCVD at high pressure and reduced gravity. Also, we discuss non-intrusive real-time optical monitoring of flow dynamics coupled to homogeneous gas phase reactions, transport and surface processes. While suborbital flights may suffice for studies of initial stages of heteroepitaxy experiments in space are essential for a complete evaluation of steady-state growth.

  11. Bronchoscopic thermal vapor ablation in a canine model of emphysema

    Directory of Open Access Journals (Sweden)

    Tuck SA

    2012-01-01

    Full Text Available Stephanie A Tuck1, Vanessa Lopes-Berkas2, Sheree Beam3, Joseph C Anderson11Uptake Medical Corp, Seattle, WA, 2American Preclinical Services, Coon Rapids, MN, 3Preclinical Pathology Consulting Services, Ham Lake, MN, USAAbstract: Clinical studies indicate the potential of bronchoscopic thermal vapor ablation to result in clinically relevant improvements in severe chronic obstructive pulmonary disease patients with upper lobe-predominant emphysema. However, the mechanisms by which vapor ablation results in lung volume reduction are not fully known. This study determined the 3-month safety and efficacy of vapor ablation in a canine model of emphysema and described the histopathological changes in the lung. The cranial lobes of papain-exposed dogs were treated with a vapor dose of ten calories per gram of lung tissue (n = 8 or were sham treated (n = 3. Safety was monitored peri- and postoperatively for 3 months. Animals were then sacrificed, estimates of lung volume reduction performed, and the lungs processed for histology. Vapor ablation was associated with an average of 20% volume reduction of the treated lobes and an absence of serious adverse events. The amount of lobar volume reduction was correlated with the amount of fibrosis and atelectasis in the treated lobe. Bronchoscopic thermal vapor ablation at a dose of 10 cal/g results in lobar volume reduction associated with remodeling of the targeted tissue characterized by mature collagen formation in the absence of major adverse events.Keywords: animal models, chronic obstructive pulmonary disease, bronchoscopy, lung volume reduction

  12. Bronchoscopic thermal vapor ablation in a canine model of emphysema.

    Science.gov (United States)

    Tuck, Stephanie A; Lopes-Berkas, Vanessa; Beam, Sheree; Anderson, Joseph C

    2012-01-01

    Clinical studies indicate the potential of bronchoscopic thermal vapor ablation to result in clinically relevant improvements in severe chronic obstructive pulmonary disease patients with upper lobe-predominant emphysema. However, the mechanisms by which vapor ablation results in lung volume reduction are not fully known. This study determined the 3-month safety and efficacy of vapor ablation in a canine model of emphysema and described the histopathological changes in the lung. The cranial lobes of papain-exposed dogs were treated with a vapor dose of ten calories per gram of lung tissue (n = 8) or were sham treated (n = 3). Safety was monitored peri- and postoperatively for 3 months. Animals were then sacrificed, estimates of lung volume reduction performed, and the lungs processed for histology. Vapor ablation was associated with an average of 20% volume reduction of the treated lobes and an absence of serious adverse events. The amount of lobar volume reduction was correlated with the amount of fibrosis and atelectasis in the treated lobe. Bronchoscopic thermal vapor ablation at a dose of 10 cal/g results in lobar volume reduction associated with remodeling of the targeted tissue characterized by mature collagen formation in the absence of major adverse events.

  13. Mechanical properties of chemical vapor deposited diamond

    Science.gov (United States)

    Kant, Avinash

    The hardness, elastic modulus, subcritical crack growth and fracture toughness of chemical vapor deposited (CVD) polycrystalline diamond films have been investigated on thick (˜100 to 300 mum) free-standing films with regard to the composition, microstructure, failure mechanisms and measurement techniques. The rationale for this study was the uncertainty in measuring these properties in previous research and the variability in the composition and microstructure of the material, which may affect these properties. Two predominant micro-hardness measurement techniques, namely Vickers and Knoop indentation, were employed. Existing Young's modulus measurement techniques such as dynamic resonance and nano-indentation were reviewed for modulus measurement on these films. The validity of indentation fracture toughness measurement for CVD diamond films using micro-hardness indentation has been established based on comparison with the conventional method of tensile testing of pre-notched compact-tension samples. The fracture toughness, Ksbc, of diamond was measured using indentation methods and for the first time by the tensile testing of pre-notched fracture-mechanics type compact-tension samples. Measured Ksbc values were found to be between 5 and 7 MPa-msp{1/2} by either method. Studies on subcritical crack growth (i.e., at stress intensities less than Ksbc) indicated that CVD diamond is essentially immune to stress-corrosion cracking under sustained loads in room air, water and acid environments. Extensive studies of the microstructure and mechanisms of failure were conducted. A commonly known toughening mechanism for ceramics by weakening the grain boundary in order to promote intergranular failure and grain bridging, has been implemented to improve the toughness of CVD diamond films. Several films with nominally the same thickness but small differences in their non-diamond content were studied and a significant variation in the toughness measurements was observed

  14. Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

    2015-03-02

    A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

  15. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  16. Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

    Science.gov (United States)

    Pilatos, George; Perdikaki, Anna V.; Sapalidis, Andreas; Pappas, George S.; Giannakopoulou, Tatiana; Tsoutsou, Dimitra; Xenogiannopoulou, Evangelia; Boukos, Nikos; Dimoulas, Athanasios; Trapalis, Christos; Kanellopoulos, Nick K.; Karanikolos, Georgios N.

    2016-02-01

    Growth of few-layer graphene using ferrocene as precursor by chemical vapor deposition is reported. The growth did not involve any additional carbon or catalyst source or external hydrocarbon gases. Parametric investigation was performed using different conditions, namely, varying growth temperature from 600 to1000 °C, and growth duration from 5 min to 3 h, as well as using fast quenching or gradual cooling after the thermal treatment, in order to examine the effect on the quality of the produced graphene. The growth took place on silicon wafers and resulted, under optimal conditions, in formation of graphene with 2-3 layers and high graphitic quality, as evidenced by Raman spectroscopy, with characteristic full width at half maximum of the 2D band of 49.46 cm-1, and I2D/IG and ID/IG intensity ratios of 1.15 and 0.26, respectively. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to further evaluate graphene characteristics and enlighten growth mechanism. Electrochemical evaluation of the developed material was performed using cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge measurements.

  17. Hybrid Vapor Compression Adsorption System: Thermal Storage Using Hybrid Vapor Compression Adsorption System

    Energy Technology Data Exchange (ETDEWEB)

    None

    2012-01-04

    HEATS Project: UTRC is developing a new climate-control system for EVs that uses a hybrid vapor compression adsorption system with thermal energy storage. The targeted, closed system will use energy during the battery-charging step to recharge the thermal storage, and it will use minimal power to provide cooling or heating to the cabin during a drive cycle. The team will use a unique approach of absorbing a refrigerant on a metal salt, which will create a lightweight, high-energy-density refrigerant. This unique working pair can operate indefinitely as a traditional vapor compression heat pump using electrical energy, if desired. The project will deliver a hot-and-cold battery that provides comfort to the passengers using minimal power, substantially extending the driving range of EVs.

  18. Microstructure of C/C composites prepared by chemical vapor infiltration method with vaporized kerosene as a precursor

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jiping [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)]. E-mail: jipingwang@gmail.com; Qian Junmin [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Jin Zhihao [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Qiao Guanjun [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China)

    2006-03-15

    The microstructures of two types of C/C composites prepared from different carbon felts by a rapid densification method, thermal gradient chemical vapor infiltration with vaporized kerosene as a precursor, at 1080-1120 deg. C for 6 h were characterized by polarized light microscopy (PLM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman micro-spectrometry techniques. The experimental results show that the fibers in the two composites are both surrounded by ring-shaped pyrocarbons with rough laminar texture, but the thickness, the surface morphology of the pyrocarbons and the graphitizability of the composites depend much on the configurations of carbon felts. The C/C composite fabricated from a higher porosity carbon felt possesses larger thickness and rougher surface of pyrocarbon, and has a lower graphitizability after heat treatment at 2300 deg. C for 2 h.

  19. Simple Graphene Synthesis via Chemical Vapor Deposition

    Science.gov (United States)

    Jacobberger, Robert M.; Machhi, Rushad; Wroblewski, Jennifer; Taylor, Ben; Gillian-Daniel, Anne Lynn; Arnold, Michael S.

    2015-01-01

    Graphene's unique combination of exceptional mechanical, electronic, and thermal properties makes this material a promising candidate to enable next-generation technologies in a wide range of fields, including electronics, energy, and medicine. However, educational activities involving graphene have been limited due to the high expense and…

  20. Graphene-Based Chemical Vapor Sensors for Electronic Nose Applications

    Science.gov (United States)

    Nallon, Eric C.

    An electronic nose (e-nose) is a biologically inspired device designed to mimic the operation of the olfactory system. The e-nose utilizes a chemical sensor array consisting of broadly responsive vapor sensors, whose combined response produces a unique pattern for a given compound or mixture. The sensor array is inspired by the biological function of the receptor neurons found in the human olfactory system, which are inherently cross-reactive and respond to many different compounds. The use of an e-nose is an attractive approach to predict unknown odors and is used in many fields for quantitative and qualitative analysis. If properly designed, an e-nose has the potential to adapt to new odors it was not originally designed for through laboratory training and algorithm updates. This would eliminate the lengthy and costly R&D costs associated with materiel and product development. Although e-nose technology has been around for over two decades, much research is still being undertaken in order to find new and more diverse types of sensors. Graphene is a single-layer, 2D material comprised of carbon atoms arranged in a hexagonal lattice, with extraordinary electrical, mechanical, thermal and optical properties due to its 2D, sp2-bonded structure. Graphene has much potential as a chemical sensing material due to its 2D structure, which provides a surface entirely exposed to its surrounding environment. In this configuration, every carbon atom in graphene is a surface atom, providing the greatest possible surface area per unit volume, so that electron transport is highly sensitive to adsorbed molecular species. Graphene has gained much attention since its discovery in 2004, but has not been realized in many commercial electronics. It has the potential to be a revolutionary material for use in chemical sensors due to its excellent conductivity, large surface area, low noise, and versatile surface for functionalization. In this work, graphene is incorporated into a

  1. Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

    Science.gov (United States)

    Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

    1995-01-01

    Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

  2. Plasma-enhanced chemical vapor deposition for YBCO film fabrication of superconducting fault-current limiter

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Byung Hyuk; Kim, Chan Joong

    2006-05-15

    Since the high-temperature superconductor of oxide type was founded, many researches and efforts have been performed for finding its application field. The YBCO superconducting film fabricated on economic metal substrate with uniform critical current density is considered as superconducting fault-current limiter (SFCL). There are physical and chemical processes to fabricate superconductor film, and it is understood that the chemical methods are more economic to deposit large area. Among them, chemical vapor deposition (CVD) is a promising deposition method in obtaining film uniformity. To solve the problems due to the high deposition temperature of thermal CVD, plasma-enhanced chemical vapor deposition (PECVD) is suggested. This report describes the principle and fabrication trend of SFCL, example of YBCO film deposition by PECVD method, and principle of plasma deposition.

  3. SAW Sensors for Chemical Vapors and Gases

    Science.gov (United States)

    Devkota, Jagannath; Ohodnicki, Paul R.; Greve, David W.

    2017-01-01

    Surface acoustic wave (SAW) technology provides a sensitive platform for sensing chemicals in gaseous and fluidic states with the inherent advantages of passive and wireless operation. In this review, we provide a general overview on the fundamental aspects and some major advances of Rayleigh wave-based SAW sensors in sensing chemicals in a gaseous phase. In particular, we review the progress in general understanding of the SAW chemical sensing mechanism, optimization of the sensor characteristics, and the development of the sensors operational at different conditions. Based on previous publications, we suggest some appropriate sensing approaches for particular applications and identify new opportunities and needs for additional research in this area moving into the future. PMID:28397760

  4. Vaporization of heavy metals during thermal treatment of model solid waste in a fluidized bed incinerator.

    Science.gov (United States)

    Yu, Jie; Sun, Lushi; Xiang, Jun; Hu, Song; Su, Sheng; Qiu, Jianrong

    2012-03-01

    This paper investigated the volatilization behavior of heavy metals during thermal treatment of model solid waste in a fluidized bed reactor. Four metal chlorides (Cd, Pb, Cu and Zn) were chosen as metal sources. The influence of redox conditions, water and mineral matrice on heavy metal volatilization was investigated. In general, Cd shows significant vaporization especially when HCl was injected, while Cu and Pb vaporize moderately and Zn vaporization is negligible. Increasing oxygen concentration can lower heavy metal vaporization. Heavy metal interactions with the mineral matter can result in the formation of stable metallic species thus playing a negative effect on their behavior. However, HCl can promote the heavy metal release by preventing the formation of stable metallic species. The chemical sorption (either physical or chemical) inside the pores, coupled with the internal diffusion of gaseous metal species, may also control the vaporization process. With SO(2) injected, Cd and Pb show a higher volatility as a result of SO(2) reducing characteristics. From the analysis, the subsequent order of heavy metal volatility can be found: Cd>Cu≥Pb≫Zn. Copyright © 2012 Elsevier Ltd. All rights reserved.

  5. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  6. Acoustic Droplet Vaporization for the Enhancement of Ultrasound Thermal Therapy

    Science.gov (United States)

    Zhang, Man; Fabiilli, Mario; Carson, Paul; Padilla, Frederic; Swanson, Scott; Kripfgans, Oliver; Fowlkes, Brian

    2011-01-01

    Acoustic droplet vaporization (ADV) is an ultrasound method for converting biocompatible microdroplets into microbubbles. The objective is to demonstrate that ADV bubbles can enhance high intensity focused ultrasound (HIFU) therapy by controlling and increasing energy absorption at the focus. Thermal phantoms were made with or without droplets. Compound lesions were formed in the phantoms by 5-second exposures with 5-second delays. Center to center spacing of individual lesions was 5.5 mm in either a linear pattern or a spiral pattern. Prior to the HIFU, 10 cycle tone bursts with 0.25% duty cycle were used to vaporize the droplets, forming an “acoustic trench” within 30 seconds. The transducer was then focused in the middle of the back bubble wall to form thermal lesions in the trench. All lesions were imaged optically and with 2T MRI. With the use of ADV and the acoustic trench, a uniform thermal ablation volume of 15 cm3 was achieved in 4 minutes; without ADV only less than 15% of this volume was filled. The commonly seen tadpole shape characteristic of bubble-enhanced HIFU lesions was not evident with the acoustic trench. In conclusion, ADV shows promise for the spatial control and dramatic acceleration of thermal lesion production by HIFU. PMID:21804749

  7. Chemical and thermal stability of insulin

    DEFF Research Database (Denmark)

    Huus, Kasper; Havelund, Svend; Olsen, Helle B

    2006-01-01

    To study the correlation between the thermal and chemical stability of insulin formulations with various insulin hexamer ligands.......To study the correlation between the thermal and chemical stability of insulin formulations with various insulin hexamer ligands....

  8. Ultra-sensitive chemical vapor detection using micro-cavity photothermal spectroscopy.

    Science.gov (United States)

    Hu, Juejun

    2010-10-11

    In this paper, I systematically investigated Micro-Cavity PhotoThermal Spectroscopy (MC-PTS), a novel technique for ultra-sensitive detection of chemical molecular species. I first derive the photothermal enhancement factor and noise characteristics of the technique using a generic theoretical model, followed by numerical analysis of a design example using chalcogenide glass micro-disk cavities. Guidelines for sensor material selection and device design are formulated based on the theoretical insight. The numerical analysis shows that this technique features a record photothermal enhancement factor of 10(4) with respect to conventional cavity-enhanced (multi-pass) infrared absorption spectroscopy, and is capable of detecting non-preconcentrated chemical vapor molecules down to the ppt level with a moderate cavity quality factor of 10(5) and a pump laser power of 0.1 W. Such performance qualifies this technique as one of the most sensitive methods for chemical vapor spectroscopic analysis.

  9. Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

    Science.gov (United States)

    Cardelino, Carlos

    1999-01-01

    A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

  10. Vaporization response of evaporating drops with finite thermal conductivity

    Science.gov (United States)

    Agosta, V. D.; Hammer, S. S.

    1975-01-01

    A numerical computing procedure was developed for calculating vaporization histories of evaporating drops in a combustor in which travelling transverse oscillations occurred. The liquid drop was assumed to have a finite thermal conductivity. The system of equations was solved by using a finite difference method programmed for solution on a high speed digital computer. Oscillations in the ratio of vaporization of an array of repetitivity injected drops in the combustor were obtained from summation of individual drop histories. A nonlinear in-phase frequency response factor for the entire vaporization process to oscillations in pressure was evaluated. A nonlinear out-of-phase response factor, in-phase and out-of-phase harmonic response factors, and a Princeton type 'n' and 'tau' were determined. The resulting data was correlated and is presented in graphical format. Qualitative agreement with the open literature is obtained in the behavior of the in-phase response factor. Quantitatively the results of the present finite conductivity spray analysis do not correlate with the results of a single drop model.

  11. Synthesis of single-crystalline anisotropic gold nano-crystals via chemical vapor deposition

    Science.gov (United States)

    Manna, Sohini; Kim, Jong Woo; Takahashi, Yukiko; Shpyrko, Oleg G.; Fullerton, Eric E.

    2016-05-01

    We report on a novel one-step catalyst-free, thermal chemical vapor deposition procedure to synthesize gold nanocrystals on silicon substrates. This approach yields single-crystal nanocrystals with various morphologies, such as prisms, icosahedrons, and five-fold twinned decahedrons. Our approach demonstrates that high-quality anisotropic crystals composed of fcc metals can be produced without the need for surfactants or templates. Compared with the traditional wet chemical synthesis processes, our method enables direct formation of highly pure and single crystalline nanocrystals on solid substrates which have applications in catalysis. We investigated the evolution of gold nanocrystals and established their formation mechanism.

  12. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

    Science.gov (United States)

    Bhat, Ishwara B.

    The properties of silicon carbide materials are first reviewed, with special emphasis on properties related to power device applications. Epitaxial growth methods for SiC are then discussed with emphasis on recent results for epitaxial growth by the hot-wall chemical vapor deposition method. The growth mechanism for maintaining the polytype, namely step-controlled epitaxy, is discussed. Also described is the selective epitaxial growth carried out on SiC at the author's laboratory, including some unpublished work.

  13. Research on chemical vapor deposition processes for advanced ceramic coatings

    Science.gov (United States)

    Rosner, Daniel E.

    1993-01-01

    Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

  14. Modeling of chemical vapor deposition. I. General considerations

    Science.gov (United States)

    Korec, J.; Heyen, M.

    1982-12-01

    In this study a general analysis of chemical vapor deposition (CVD) processes carried out in open flow systems is presented. In this treatment the successive process steps, namely mass transport in the gas phase, adsorption, chemical reaction and surface diffusion are included. The proposed approach allows computation of the activity of the material to be deposited; this quantity is determined by a balance between the rates of gas phase diffusion and of surface processes. An expression is presented relating the activity near the interface to the growth rate of the deposited layer. It is shown that the same approach can be used for etching conditions.

  15. Vertically aligned carbon nanotube field emitter arrays with Ohmic base contact to silicon by Fe-catalyzed chemical vapor deposition

    NARCIS (Netherlands)

    Morassutto, M.; Tiggelaar, Roald M.; Smithers, M.A.; Smithers, M.A.; Gardeniers, Johannes G.E.

    2016-01-01

    Abstract In this study, dense arrays of aligned carbon nanotubes are obtained by thermal catalytic chemical vapor deposition, using Fe catalyst dispersed on a thin Ta layer. Alignment of the carbon nanotubes depends on the original Fe layer thickness from which the catalyst dispersion is obtained by

  16. Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, I; Roessler, J; Frimmer, M; Fontcuberta i Morral, A [Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall, D-85748 Garching (Germany); Yu, L; Alet, Pierre Jean; Roca i Cabarrocas, P [LPICM, Ecole Polytechnique, CNRS, F-91128 Palaiseau (France); Conesa-Boj, S; Estrade, S; Peiro, F; Arbiol, J; Morante, J R [EME/XaRMAE/IN2UB, Departamento d' Electronica, Universitat de Barcelona, MartIi Franques, E-08028, Barcelona (Spain)

    2009-04-15

    Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between <111> and <112>, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

  17. Implications of Thermal Annealing on the Benzene Vapor Sensing Behavior of PEVA-Graphene Nanocomposite Threads.

    Science.gov (United States)

    Patel, Sanjay V; Cemalovic, Sabina; Tolley, William K; Hobson, Stephen T; Anderson, Ryan; Fruhberger, Bernd

    2018-02-14

    The effect of thermal treatments, on the benzene vapor sensitivity of polyethylene (co-)vinylacetate (PEVA)/graphene nanocomposite threads, used as chemiresistive sensors, was investigated using DC resistance measurements, differential scanning calorimetry (DSC), and scanning electron microscopy (SEM). These flexible threads are being developed as low-cost, easy-to-measure chemical sensors that can be incorporated into smart clothing or disposable sensing patches. Chemiresistive threads were solution-cast or extruded from PEVA and resistance with successive anneals. Threads heated to ≥80 °C showed improved limits of detection, resulting from improved signal-noise, when exposed to benzene vapor in dry air. In addition, annealing increased the speed of response and recovery upon exposure to and removal of benzene vapor. DSC results showed that the presence of graphene raises the freezing point, and may allow greater crystallinity, in the nanocomposite after annealing. SEM images confirm increased surface roughness/area, which may account for the increase response speed after annealing. Benzene vapor detection at 5 ppm is demonstrated with limits of detection estimated to be as low as 1.5 ppm, reflecting an order of magnitude improvement over unannealed threads.

  18. Coupling a thermal atomic vapor to an integrated ring resonator

    CERN Document Server

    Ritter, Ralf; Pernice, Wolfram; Kübler, Harald; Pfau, Tilman; Löw, Robert

    2016-01-01

    Strongly interacting atom-cavity systems within a network with many nodes constitute a possible realization for a quantum internet which allows for quantum communication and computation on the same platform. To implement such large-scale quantum networks, nanophotonic resonators are promising candidates because they can be scalably fabricated and interconnected with waveguides and optical fibers. By integrating arrays of ring resonators into a vapor cell we show that thermal rubidium atoms above room temperature can be coupled to photonic cavities as building blocks for chip-scale hybrid circuits. Although strong coupling is not yet achieved in this first realization, our approach provides a key step towards miniaturization and scalability of atom-cavity systems.

  19. Combustion chamber and thermal vapor stream producing apparatus and method

    Science.gov (United States)

    Sperry, John S.; Krajicek, Richard W.; Cradeur, Robert R.

    1978-01-01

    A new and improved method and apparatus for burning a hydrocarbon fuel for producing a high pressure thermal vapor stream comprising steam and combustion gases for injecting into a subterranean formation for the recovery of liquefiable minerals therefrom, wherein a high pressure combustion chamber having multiple refractory lined combustion zones of varying diameters is provided for burning a hydrocarbon fuel and pressurized air in predetermined ratios injected into the chamber for producing hot combustion gases essentially free of oxidizing components and solid carbonaceous particles. The combustion zones are formed by zones of increasing diameters up a final zone of decreasing diameter to provide expansion zones which cause turbulence through controlled thorough mixing of the air and fuel to facilitate complete combustion. The high pressure air and fuel is injected into the first of the multiple zones where ignition occurs with a portion of the air injected at or near the point of ignition to further provide turbulence and more complete combustion.

  20. Charge-induced optical bistability in thermal Rydberg vapor

    CERN Document Server

    Weller, Daniel; Rico, Andy; Löw, Robert; Kübler, Harald

    2016-01-01

    We investigate the phenomenon of optical bistability in a driven ensemble of Rydberg atoms. By performing two experiments with thermal vapors of rubidium and cesium, we are able to shed light onto the underlying interaction mechanisms causing such a non-linear behavior. Due to the different properties of these two atomic species, we conclude that the large polarizability of Rydberg states in combination with electric fields of spontaneously ionized Rydberg atoms is the relevant interaction mechanism. In the case of rubidium, we directly measure the electric field in a bistable situation via two-species spectroscopy. In cesium, we make use of the different sign of the polarizability for different l-states and the possibility of applying electric fields. Both these experiments allow us to rule out dipole-dipole interactions, and support our hypothesis of a charge-induced bistability.

  1. Liquid fuel vaporizer and combustion chamber having an adjustable thermal conductor

    Science.gov (United States)

    Powell, Michael R; Whyatt, Greg A; Howe, Daniel T; Fountain, Matthew S

    2014-03-04

    The efficiency and effectiveness of apparatuses for vaporizing and combusting liquid fuel can be improved using thermal conductors. For example, an apparatus having a liquid fuel vaporizer and a combustion chamber can be characterized by a thermal conductor that conducts heat from the combustion chamber to the vaporizer. The thermal conductor can be a movable member positioned at an insertion depth within the combustion chamber that corresponds to a rate of heat conduction from the combustion chamber to the vaporizer. The rate of heat conduction can, therefore, be adjusted by positioning the movable member at a different insertion depth.

  2. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  3. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  4. Atmospheric water vapor retrieval from Landsat 8 thermal infrared images

    Science.gov (United States)

    Ren, Huazhong; Du, Chen; Liu, Rongyuan; Qin, Qiming; Yan, Guangjian; Li, Zhao-Liang; Meng, Jinjie

    2015-03-01

    Atmospheric water vapor (wv) is required for the accurate retrieval of the land surface temperature from remote sensing data and other applications. This work aims to estimate wv from Landsat 8 Thermal InfraRed Sensor (TIRS) images using a new modified split-window covariance-variance ratio (MSWCVR) method on the basis of the brightness temperatures of two thermal infrared bands. Results show that the MSWCVR method can theoretically retrieve wv with an accuracy better than 0.3 g/cm2 for dry atmosphere (wv Robotic Network) ground-measured data and MODIS (Moderate Resolution Imaging Spectroradiometer) products. The results show that the retrieved wv from the TIRS data is highly correlated with the wv of AERONET and MODIS but is generally larger. This difference was probably attributed to the uncertainty of radiometric calibration and stray light coming outside from field of view of TIRS instrument in the current images. Consequently, the data quality and radiometric calibration of the TIRS data should be improved in the future.

  5. Chemical etching of copper foils for single-layer graphene growth by chemical vapor deposition

    Science.gov (United States)

    Yoshihara, Naoki; Noda, Masaru

    2017-10-01

    Chemical etching on copper surface is essential as a pre-treatment for single-layer graphene growth by chemical vapor deposition (CVD). Here, we investigated the effect of chemical etching treatment on copper foils for single-layer graphene CVD growth. The chemical etching conditions, such as the type of chemical etchants and the treatment time, were found to strongly influence the graphene domain size. Moreover, a drastic change in the layer structure of graphene sheets, which was attributed to the surface morphology of the etched copper foil, was confirmed by graphene transmittance and Raman mapping measurements.

  6. Chemical preconcentrator with integral thermal flow sensor

    Science.gov (United States)

    Manginell, Ronald P.; Frye-Mason, Gregory C.

    2003-01-01

    A chemical preconcentrator with integral thermal flow sensor can be used to accurately measure fluid flow rate in a microanalytical system. The thermal flow sensor can be operated in either constant temperature or constant power mode and variants thereof. The chemical preconcentrator with integral thermal flow sensor can be fabricated with the same MEMS technology as the rest of the microanlaytical system. Because of its low heat capacity, low-loss, and small size, the chemical preconcentrator with integral thermal flow sensor is fast and efficient enough to be used in battery-powered, portable microanalytical systems.

  7. [Chemical and Thermal Eye Burns].

    Science.gov (United States)

    Struck, H-G

    2016-11-01

    Background: This review gives a therapeutic approach for the early treatment of chemical and thermal burns of the ocular surface (CTOS). Method: Based on a review of international literature, the experiences of University Hospital Aachen and Halle/Saale, Eye Clinic Cologne as well as experimental data of the research institute (An-Institut) at RWTH Aachen University are considered and discussed. Results: As the risk depends on the stage of CTOS, recommendations are given for acute treatment for different stages. Pathophysiological considerations will be discussed. Special treatment options for exceptional situations and for late phase CTOS are demonstrated. Conclusion: According to the latest data, the most important clinical recommendation for the acute phase of CTOS is the application of a suitable rinsing solution. Furthermore, anti-inflammatory treatment is of central importance. For the therapy of severe CTOS, approved and advanced surgical methods need to be applied. In this way, anti-inflammatory and tissue-protecting mechanisms are activated simultaneously. Georg Thieme Verlag KG Stuttgart · New York.

  8. Development and study of chemical vapor deposited tantalum base alloys

    Science.gov (United States)

    Meier, G. H.; Bryant, W. A.

    1976-01-01

    A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

  9. Immobilization of whole cells by chemical vapor deposition of silica.

    Science.gov (United States)

    Sizemore, Susan R; Nichols, Robert; Tatum, Randi; Atanassov, Plamen; Johnson, Glenn R; Luckarift, Heather R

    2013-01-01

    Effective entrapment of whole bacterial cells onto solid-phase materials can significantly improve bioprocessing and other biotechnology applications. Cell immobilization allows integration of biocatalysts in a manner that maintains long-term cell viability and typically enhances process output. A wide variety of functionalized materials have been explored for microbial cell immobilization, and specific advantages and limitations were identified. The method described here is a simple, versatile, and scalable one-step process for the chemical vapor deposition of silica to encapsulate and stabilize viable, whole bacterial cells. The immobilized bacterial population is prepared and captured at a predefined physiological state so as to affix bacteria with a selected metabolic or catalytic capability to compatible materials and surfaces. Immobilization of Shewanella oneidensis to carbon electrodes and immobilization of Acinetobacter venetianus to adsorbent mats are described as model systems.

  10. Structural evolution during chemical vapor deposition of diamond thin films

    Science.gov (United States)

    Morell, G.; Cancel, L. M.; Figueroa, O. L.; González, J. A.; Weiner, B. R.

    2000-11-01

    In situ phase-modulated ellipsometry was employed to monitor the nucleation and growth processes of diamond thin films fabricated by chemical vapor deposition. The effective extinction coefficient (k) at 1.96 eV was used as a basis for dividing the deposition process into intervals. The film growth was aborted at various k values yielding diamond film samples that represent snapshots of the growth process at different stages. Ex situ characterization of the films was performed using Raman spectroscopy, scanning electron microscopy, and x-ray diffraction. The results indicate that the diamond film deposition process consists of various stages in which the crystalline quality, the net compressive stress, and the relative amount of non-sp3 carbon follow different trends. A correlation between the effective k value measured in situ and the film microstructure characterized ex situ was established which enables the monitoring of the diamond film growth process in real time.

  11. Measurement of gas transport properties for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering

    1996-12-01

    In the chemical vapor infiltration (CVI) process for fabricating ceramic matrix composites (CMCs), transport of gas phase reactant into the fiber preform is a critical step. The transport can be driven by pressure or by concentration. This report describes methods for measuring this for CVI preforms and partially infiltrated composites. Results are presented for Nicalon fiber cloth layup preforms and composites, Nextel fiber braid preforms and composites, and a Nicalon fiber 3-D weave composite. The results are consistent with a percolating network model for gas transport in CVI preforms and composites. This model predicts inherent variability in local pore characteristics and transport properties, and therefore, in local densification during processing; this may lead to production of gastight composites.

  12. Mass transport measurements and modeling for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Chiang, D.Y.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Engineering

    1997-12-01

    This project involves experimental and modeling investigation of densification behavior and mass transport in fiber preforms and partially densified composites, and application of these results to chemical vapor infiltration (CVI) process modeling. This supports work on-going at ORNL in process development for fabrication of ceramic matrix composite (CMC) tubes. Tube-shaped composite preforms are fabricated at ORNL with Nextel{trademark} 312 fiber (3M Corporation, St. Paul, MN) by placing and compressing several layers of braided sleeve on a tubular mandrel. In terms of fiber architecture these preforms are significantly different than those made previously with Nicalon{trademark} fiber (Nippon Carbon Corp., Tokyo, Japan) square weave cloth. The authors have made microstructure and permeability measurements on several of these preforms and a few partially densified composites so as to better understand their densification behavior during CVI.

  13. Synthesis of mullite coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mulpuri, R.P.; Auger, M.; Sarin, V.K. [Boston Univ., MA (United States)

    1996-08-01

    Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Mullite is a solid solution of Al{sub 2}O{sub 3} and SiO{sub 2} with a composition of 3Al{sub 2}O{sub 3}{circ}2SiO{sub 2}. Thermodynamic calculations performed on the AlCl{sub 3}-SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. With the aid of these diagrams and consideration of kinetic rate limiting factors, initial process parameters were determined. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  14. Diamond-coated fiber Bragg grating through the hot filament chemical vapor process for chemical durability improvement.

    Science.gov (United States)

    Alberto, Nélia; José Kalinowski, Hypolito; Neto, Victor; Nogueira, Rogério

    2017-02-20

    In recent years, the coating of fiber Bragg gratings (FBGs) with a specific material has opened up the possibility to broaden the limits of applicability of this technology. Diamond has a set of properties that makes it an attractive candidate to protect the optical fiber against chemically harsh environments, whose sensing is also a great challenge. One of the most used techniques to obtain these coatings is through the hot filament chemical vapor deposition (HFCVD); in this process, the temperature reaches, typically, around 850°C-900°C. In this work, the regeneration of a seed FBG during its coating with a nanocrystalline diamond thin film through the HFCVD process is presented. Simultaneously, the thermal monitoring of the process was also performed using the same grating. The resistance test in a corrosive medium reveals an improvement on the durability of the sensing properties of the diamond-coated FBG compared with an uncoated FBG, foreseeing a vast range of applications.

  15. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    Science.gov (United States)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  16. Macrokinetics of carbon nanotubes synthesis by the chemical vapor deposition method

    Science.gov (United States)

    Rukhov, Artem; Dyachkova, Tatyana; Tugolukov, Evgeny; Besperstova, Galina

    2017-11-01

    A new approach to studying and developing basic processes which take place on the surface of a metal catalyst during the thermal decomposition of carbonaceous substances in the carbon nanotubes synthesis by the chemical vapor deposition method was proposed. In addition, an analysis was made of the interrelationships between these thermal, diffusion, hydrodynamic and other synthesis processes. A strong effect of the catalyst regeneration stage on the stage of nanotube formation has been shown. Based on the developed approach, a mathematical model was elaborated. Comparison of the calculation and the experiment carried out with the NiO-MgO catalyst at propane flow rate of 50 mL/min (standard conditions) and ethanol flow rate 0.3 mL/min (liq.) has revealed a discrepancy of less than 10%.

  17. METHODS OF SAMPLE THERMAL MODIFICATION BY MEANS DOUBLE VAPORIZATION IN TWO STEP ATOMIZER FOR ATOMIC ABSORPTION ANALYSIS

    OpenAIRE

    Grinshtein, Ilia; Vilpan, Yuri; Saraev, Alexei; Vasilieva, Lubov

    2000-01-01

    After sample vaporization in two-step atomizer with a purged vaporizer sample vapors can be transferred into preheated or into non-heated atomizer. In the last case the atomizer walls trap the vapors and then the sample is second time vaporized and atomized by heating the atomizer. Thermal pre-treatment of a sample using this double vaporization makes possible the direct analysis of samples with strongly interfering matrices including solids. The technique was used for the direct determinatio...

  18. Numerical study of a three-dimensional chemical vapor deposition reactor with detailed chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Ern, A. [CERMICS-ENPC, Noisy-le-Grand (France); Giovangigli, V. [Encole Polytechnique, Palaiseau (France); Smooke, M.D. [Yale Univ., New Haven, CT (United States)

    1996-06-01

    A numerical model of a three-dimensional, horizontal channel, chemical vapor deposition reactor is presented in order to study gallium arenide growth from trimethylgallium and arsine source reactants. Fluid flow and temperature predictions inside the reactor are obtained using the vorticity-velocity form of the three-dimensional, study-state Navier-Stokes equations coupled with a detailed energy balance equation inside the reactor and on its walls. Detailed gas phase and surface chemistry mechanisms are used to predict the chemical species profiles inside the reactor, the growth rate distribution on the substrate, and the level of carbon incorporation into the grown layer. The species diffusion velocities are written using the recent theory of iterative transport algorithms and account for both thermal diffusion and multicomponent diffusion processes. The influence of susceptor temperature and inlet composition on growth rate and carbon incorporation is found to agree well with previous numerical and experimental work. 46 refs., 15 figs., 3 tabs.

  19. Anisotropic hydrogen etching of chemical vapor deposited graphene.

    Science.gov (United States)

    Zhang, Yi; Li, Zhen; Kim, Pyojae; Zhang, Luyao; Zhou, Chongwu

    2012-01-24

    We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 °C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared to other temperatures (700, 900, and 1000 °C), etching of graphene at 800 °C is most efficient and anisotropic. Of the angles of graphene edges after etching, 80% are 120°, indicating the etching is highly anisotropic. No increase of the D band along the etched edges indicates that the crystallographic orientation of etching is in the zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO(2) under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size and may enable the etching of graphene into nanoribbons for electronic applications. © 2011 American Chemical Society

  20. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    Science.gov (United States)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  1. Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis

  2. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted,

  3. Polymer Thin Films and Surface Modification by Chemical Vapor Deposition: Recent Progress.

    Science.gov (United States)

    Chen, Nan; Kim, Do Han; Kovacik, Peter; Sojoudi, Hossein; Wang, Minghui; Gleason, Karen K

    2016-06-07

    Chemical vapor deposition (CVD) polymerization uses vapor phase monomeric reactants to synthesize organic thin films directly on substrates. These thin films are desirable as conformal surface engineering materials and functional layers. The facile tunability of the films and their surface properties allow successful integration of CVD thin films into prototypes for applications in surface modification, device fabrication, and protective films. CVD polymers also bridge microfabrication technology with chemical and biological systems. Robust coatings can be achieved via CVD methods as antifouling, anti-icing, and antihydrate surfaces, as well as stimuli-responsive or biocompatible polymers and novel nanostructures. Use of low-energy input, modest vacuum, and room-temperature substrates renders CVD polymerization compatible with thermally sensitive substrates and devices. Compared with solution-based methods, CVD is particularly useful for insoluble materials, such as electrically conductive polymers and controllably crosslinked networks, and has the potential to reduce environmental, health, and safety impacts associated with solvents. This review discusses the relevant background and selected applications of recent advances by two methods that display and use the high retention of the organic functional groups from their respective monomers, initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization.

  4. Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

    Science.gov (United States)

    Chung, Yung-Bin; Park, Hyung-Ki; Lee, Dong-Kwon; Jo, Wook; Song, Jean-Ho; Lee, Sang-Hoon; Hwang, Nong-Moon

    2011-07-01

    Although the deposition of crystalline silicon on a glass substrate has been pursued using hot wire chemical vapor deposition or plasma enhanced chemical vapor deposition for applications in flat panel displays and solar cells, the process has been only partly successful because of the inevitable formation of an amorphous incubation layer on a glass substrate. Currently, the crystalline silicon films are prepared by depositing an amorphous silicon film on a glass substrate and then crystallizing it by excimer laser annealing (ELA), metal induced crystallization or rapid thermal annealing (RTA). Here we report a new process, which can remove the amorphous incubation layer and thereby deposit crystalline silicon directly on glass using HCl. The intrinsic crystalline silicon film has a conductivity of 3.7×10 -5 Scm -1 and the n-type doped crystalline silicon film has the Hall mobility of 15.8 cm 2V -1 s -1, whose values are comparable to those prepared by ELA and RTA, respectively.

  5. Chemical vapor deposition growth of two-dimensional heterojunctions

    Science.gov (United States)

    Cui, Yu; Li, Bo; Li, JingBo; Wei, ZhongMing

    2018-01-01

    The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.

  6. Chemical vapor infiltration of TiB{sub 2} composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Miller, J.H.; Cooley, K.C.; Lowden, R.A. [Oak Ridge National Lab., TN (United States); Starr, T.L. [Georgia Tech Research Inst., Atlanta, GA (United States)

    1993-01-01

    Efficiency of the Hall-Heroult electrolytic reduction of aluminum can be substantially improved by the use of a TiB{sub 2} cathode surface. The use of TiB{sub 2}, however, has been hampered by the brittle nature of the material and the grain-boundary attack of sintering-aid phases by molten aluminum. In the current work, TiB{sub 2} is toughened through the use of reinforcing fibers, with chemical vapor infiltration (CVI) used to produce pure TiB{sub 2}. It has been observed, however, that the formation of TiB{sub 2} from chloride precursors at fabrication temperatures below 900 to 1000{degrees}C alloys the retention of destructive levels of chlorine in the material. At higher fabrication temperatures and under appropriate infiltration conditions, as determined from the use of a process model, a TIB{sub 2}THORNEL P-25 fiber composite, 45 mm in diam and 6 mm thick, has been fabricated in 20 h. The material has been demonstrated to be stable in molten aluminum in short-duration tests.

  7. Chemical vapor infiltration of TiB[sub 2] composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M.; Miller, J.H.; Cooley, K.C.; Lowden, R.A. (Oak Ridge National Lab., TN (United States)); Starr, T.L. (Georgia Tech Research Inst., Atlanta, GA (United States))

    1993-01-01

    Efficiency of the Hall-Heroult electrolytic reduction of aluminum can be substantially improved by the use of a TiB[sub 2] cathode surface. The use of TiB[sub 2], however, has been hampered by the brittle nature of the material and the grain-boundary attack of sintering-aid phases by molten aluminum. In the current work, TiB[sub 2] is toughened through the use of reinforcing fibers, with chemical vapor infiltration (CVI) used to produce pure TiB[sub 2]. It has been observed, however, that the formation of TiB[sub 2] from chloride precursors at fabrication temperatures below 900 to 1000[degrees]C alloys the retention of destructive levels of chlorine in the material. At higher fabrication temperatures and under appropriate infiltration conditions, as determined from the use of a process model, a TIB[sub 2]THORNEL P-25 fiber composite, 45 mm in diam and 6 mm thick, has been fabricated in 20 h. The material has been demonstrated to be stable in molten aluminum in short-duration tests.

  8. Growth of graphene underlayers by chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Mopeli Fabiane

    2013-11-01

    Full Text Available We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD. Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT to yield poly (methyl methacrylate (PMMA/graphene/glass or (2 inverted transfer (IT to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM and atomic force microscopy (AFM were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  9. Growth of graphene underlayers by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fabiane, Mopeli; Khamlich, Saleh; Bello, Abdulhakeem; Dangbegnon, Julien; Momodu, Damilola; Manyala, Ncholu, E-mail: ncholu.manyala@up.ac.za [Department of Physics, Institute of Applied Materials, SARChI Chair in Carbon Technology and Materials, University of Pretoria, Pretoria 0028 (South Africa); Charlie Johnson, A. T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

    2013-11-15

    We present a simple and very convincing approach to visualizing that subsequent layers of graphene grow between the existing monolayer graphene and the copper catalyst in chemical vapor deposition (CVD). Graphene samples were grown by CVD and then transferred onto glass substrates by the bubbling method in two ways, either direct-transfer (DT) to yield poly (methyl methacrylate) (PMMA)/graphene/glass or (2) inverted transfer (IT) to yield graphene/PMMA/glass. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were used to reveal surface features for both the DT and IT samples. The results from FE-SEM and AFM topographic analyses of the surfaces revealed the underlayer growth of subsequent layers. The subsequent layers in the IT samples are visualized as 3D structures, where the smaller graphene layers lie above the larger layers stacked in a concentric manner. The results support the formation of the so-called “inverted wedding cake” stacking in multilayer graphene growth.

  10. Optical Diagnostics in the Combustion Chemical Vapor Deposition Proces

    Science.gov (United States)

    Luten, Henry; Oljaca, Miodrag; Tomov, Trifon; Metzger, Timothy

    1999-11-01

    Optical emission spectroscopy and IR temperature measurements are used to investigate the structure of a sub-micron droplet spray flame in the Combustion Chemical Vapor Deposition (CCVD) process. The specific system examined in this study is the deposition of barium-strontium-titanate (BaxSr1-xTiO3), a high performance ferroelectric. Spectral measurements were used to determine the decomposition rates of the precursors as well as the lifetimes and relative concentrations of the primary decomposition products. The emissions from atomic and unimolecular species reach a maximum value early in the flame and then decrease sharply, indicating very fast reaction rates. This data, however, is a function of the flame temperature. In order to arrive at proper relative concentration data, the optical emission data must be normalized using measured temperature. Two-dimensional temperature maps were obtained using a non-contact, infrared temperature sensor with peak sensitivity at 4.5 microns. It was found that the sodium emission intensity correlates with the flame temperature, and the sodium emission was used as an internal standard for removing the temperature factor and isolating the relative concentration data. While the flame temperature reaches maximum value at approximately 2 cm, the normalized emission for most species reaches peak intensity closer to the nozzle exit.

  11. Backbone-Degradable Polymers Prepared by Chemical Vapor Deposition.

    Science.gov (United States)

    Xie, Fan; Deng, Xiaopei; Kratzer, Domenic; Cheng, Kenneth C K; Friedmann, Christian; Qi, Shuhua; Solorio, Luis; Lahann, Joerg

    2017-01-02

    Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad acceptance in research and industrial applications. However, their intrinsic lack of degradability has limited wider applicability in many areas, such as biomedical devices or regenerative medicine. Herein, we demonstrate, for the first time, a backbone-degradable polymer directly synthesized via CVD. The CVD co-polymerization of [2.2]para-cyclophanes with cyclic ketene acetals, specifically 5,6-benzo-2-methylene-1,3-dioxepane (BMDO), results in well-defined, hydrolytically degradable polymers, as confirmed by FTIR spectroscopy and ellipsometry. The degradation kinetics are dependent on the ratio of ketene acetals to [2.2]para-cyclophanes as well as the hydrophobicity of the films. These coatings address an unmet need in the biomedical polymer field, as they provide access to a wide range of reactive polymer coatings that combine interfacial multifunctionality with degradability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Micro thermal diode with glass thermal insulation structure embedded in a vapor chamber

    Science.gov (United States)

    Tsukamoto, Takashiro; Hirayanagi, Takashi; Tanaka, Shuji

    2017-04-01

    This paper reports a micro thermal diode based on one-way working fluid circulation driven by surface tension force. In forward mode, working fluid evaporates and condenses at a heated and cooled area, respectively, and the condensed liquid returns to the evaporation area due to the wettability difference. By this vapor-liquid phase change mechanism, the overall heat transfer coefficient becomes high. On the other hand, in reverse mode, no continuous evaporation-condensation cycle exists. The conductive heat loss in reverse mode was minimized by an embedded glass thermal isolation structure, which makes overall heat transfer coefficient low. The test device was made by a standard MEMS process combined with glass reflow and gold bump sealing. The overall heat transfer coefficients of 13 300 \\text{W}~{{\\text{m}}-2}~\\text{K} for forward mode and 4790 \\text{W}~{{\\text{m}}-2}~\\text{K} for reverse mode were measured. The performance index of the micro thermal diode was about 2.8.

  13. Thermal luminescence spectroscopy chemical imaging sensor.

    Science.gov (United States)

    Carrieri, Arthur H; Buican, Tudor N; Roese, Erik S; Sutter, James; Samuels, Alan C

    2012-10-01

    The authors present a pseudo-active chemical imaging sensor model embodying irradiative transient heating, temperature nonequilibrium thermal luminescence spectroscopy, differential hyperspectral imaging, and artificial neural network technologies integrated together. We elaborate on various optimizations, simulations, and animations of the integrated sensor design and apply it to the terrestrial chemical contamination problem, where the interstitial contaminant compounds of detection interest (analytes) comprise liquid chemical warfare agents, their various derivative condensed phase compounds, and other material of a life-threatening nature. The sensor must measure and process a dynamic pattern of absorptive-emissive middle infrared molecular signature spectra of subject analytes to perform its chemical imaging and standoff detection functions successfully.

  14. Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

    Science.gov (United States)

    Schmidt, Marek E.; Xu, Cigang; Cooke, Mike; Mizuta, Hiroshi; Chong, Harold M. H.

    2014-04-01

    This paper reports on large area, metal-free deposition of nanocrystalline graphene (NCG) directly onto wet thermally oxidized 150 mm silicon substrates using parallel-plate plasma-enhanced chemical vapor deposition. Thickness non-uniformities as low as 13% are achieved over the whole substrate. The cluster size {{L}_{\\text{a}}} of the as-obtained films is determined from Raman spectra and lies between 1.74 and 2.67 nm. The film uniformity was further confirmed by Raman mapping. The sheet resistance {{R}_{\\text{sq}}} of 3.73 \\text{k}\\Omega and charge carrier mobility μ of 2.49\\;\\text{c}{{\\text{m}}^{2}}\\;{{\\text{V}}^{-1}}\\;{{\\text{s}}^{-1}} are measured. We show that the NCG films can be readily patterned by reactive ion etching. NCG is also successfully deposited onto quartz and sapphire substrates and showed >85% optical transparency in the visible light spectrum.

  15. Silicon Chemical Vapor Deposition Process Using a Half-Inch Silicon Wafer for Minimal Manufacturing System

    Science.gov (United States)

    Li, Ning; Habuka, Hitoshi; Ikeda, Shin-ichi; Hara, Shiro

    A chemical vapor deposition reactor for producing thin silicon films was designed and developed for achieving a new electronic device production system, the Minimal Manufacturing, using a half-inch wafer. This system requires a rapid process by a small footprint reactor. This was designed and verified by employing the technical issues, such as (i) vertical gas flow, (ii) thermal operation using a highly concentrated infrared flux, and (iii) reactor cleaning by chlorine trifluoride gas. The combination of (i) and (ii) could achieve a low heating power and a fast cooling designed by the heat balance of the small wafer placed at a position outside of the reflector. The cleaning process could be rapid by (iii). The heating step could be skipped because chlorine trifluoride gas was reactive at any temperature higher than room temperature.

  16. Modeling the Thermal Destruction of Chemical Warfare ...

    Science.gov (United States)

    Symposium Paper In the event of a terrorist attack with chemical warfare agents (CWAs), large quantities of materials, both indoor and outdoor, may be treated with thermal incineration during the site remediation process. This paper reports on a study to examine the thermal decomposition of surrogate CWAs and formation of decomposition by-products bound in model building materials (in this case, ceiling tile) in a pilot-scale rotary kiln incinerator simulator.

  17. Microwave Plasma Enhanced Chemical Vapor Deposition of Diamond in Vapor of Methanol-Based Liquid Solutions

    National Research Council Canada - National Science Library

    Tzeng, Yonhua

    2000-01-01

    .... An electrical discharge is generated by microwave power in a metal cavity in order to dissociate the vapor mixture from one of the liquid solutions, from which radicals such as OH, O, and H that etch...

  18. Development of a new laser heating system for thin film growth by chemical vapor deposition

    Science.gov (United States)

    Fujimoto, Eiji; Sumiya, Masatomo; Ohnishi, Tsuyoshi; Lippmaa, Mikk; Takeguchi, Masaki; Koinuma, Hideomi; Matsumoto, Yuji

    2012-09-01

    We have developed a new laser heating system for thin film growth by chemical vapor deposition (CVD). A collimated beam from a high-power continuous-wave 808 nm semiconductor laser was directly introduced into a CVD growth chamber without an optical fiber. The light path of the heating laser inside the chamber was isolated mechanically from the growth area by bellows to protect the optics from film coating. Three types of heat absorbers, (10 × 10 × 2 mm3) consisting of SiC, Ni/NiOx, or pyrolytic graphite covered with pyrolytic BN (PG/PBN), located at the backside of the substrate, were tested for heating performance. It was confirmed that the substrate temperature could reach higher than 1500 °C in vacuum when a PG/PBN absorber was used. A wide-range temperature response between 400 °C and 1000 °C was achieved at high heating and cooling rates. Although the thermal energy loss increased in a H2 gas ambient due to the higher thermal conductivity, temperatures up to 1000°C were achieved even in 200 Torr H2. We have demonstrated the capabilities of this laser heating system by growing ZnO films by metalorganic chemical vapor deposition. The growth mode of ZnO films was changed from columnar to lateral growth by repeated temperature modulation in this laser heating system, and consequently atomically smooth epitaxial ZnO films were successfully grown on an a-plane sapphire substrate.

  19. Continuous Fabrication of SiC Fiber Tows by Chemical Vapor Deposition

    Science.gov (United States)

    1993-01-01

    Niobium Carbonitride Films on Carbon Fibers," pp. 300-14 in Proceedings on the Seventh International Conference on Chemical Vapor Deposition, The...34Modeling of the Chemical Vapor Deposition of YI3a 2Cu30z, TiB•, and SiC Thin Films Onto Continuous Ceramic Tows," Ph.D. Dissertation, School of...SUJRJ Ct 7URM’S 15. NUMBER OF PAGES 98 Fibers, Silicon (Carbide. Chemical Vapor Deposition 16. PRICE CODE F SFSCURV C’A1 ’,’-,(AH.T,.)I•sJ $ ,,ui T 7

  20. Self-catalytic growth of tin oxide nanowires by chemical vapor deposition process

    CSIR Research Space (South Africa)

    Thabethe, BS

    2013-01-01

    Full Text Available The authors report on the synthesis of tin oxide (SnO(sub2)) nanowires by a chemical vapor deposition (CVD) process. Commercially bought SnO nanopowders were vaporized at 1050°C for 30 minutes with argon gas continuously passing through the system...

  1. A new productivity function and stability criterion in chemical vapor transport processes

    NARCIS (Netherlands)

    Klosse, K.

    1975-01-01

    The crystal growth rate in a chemical vapor transport process using a closed system is analyzed on the basis of a one-dimensional configuration. A simplified model of vapor transport enables one to obtain a set of equations yielding the rates of reaction without a complete evaluation of the partial

  2. Vanadyl precursors used to modify the properties of vanadium oxide thin films obtained by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Barreca, D.; Franzato, E.; Rizzi, G.A.; Tondello, E.; Vettori, U. [Univ. di Padova (Italy); Depero, L.E.; Sangaletti, L. [Univ. di Brescia (Italy). Dipt. di Chimica e Fisica per i Materiali

    1999-02-01

    Vanadium oxide thin films were prepared by chemical vapor deposition using as precursors a series of vanadyl complexes of general formula VO(L){sub 2}(H), where L is a {beta}-diketonate ligand. The depositions were carried out on {alpha}-Al{sub 2}O{sub 3} substrates in O{sub 2}, N{sub 2}, and N{sub 2} + H{sub 2}O atmospheres. In order to elucidate the role played by different ligands and synthesis conditions on the properties of the obtained films, the chemical composition of the samples was investigated by X-ray photoelectron spectroscopy, while their microstructure and surface morphology were analyzed by X-ray diffraction, Raman and atomic force microscopy. The thermal decomposition of the precursors, with particular attention to their reactivity in the presence of water vapor, was studied by mass spectrometry and Fourier transform infrared spectroscopy.

  3. Electrical characteristics and hydrogen concentration of chemical vapor deposited silicon dioxide films: Effect of water treatment

    Science.gov (United States)

    Li, S. C.; Murarka, S. P.

    1992-11-01

    The effect of exposing chemical vapor deposited silicon dioxide directly to water has been investigated. Unlike the effect of the water-related traps in thermally grown silicon dioxide, the capacitance-voltage (C-V) shift due to diffused-in water molecules is directly observed without using the method of avalanche injection. The resonate nuclear reaction technique with 15N ion beam has been used to measure the hydrogen concentration of water-boiled, as-deposited, and rapid thermal-annealed silicon dioxide films. These depth profiles show that the hydrogen-containing species, that are most likely water molecules, diffuse in and out and redistribute in the as-deposited and rapid thermal-annealed films. These hydrogen depth profiles also indicate that the amount of diffused-in water molecules in the oxide is limited by the solubility of the water in the oxide. The solubility of water in the oxide annealed at high temperatures is found to be significantly lower than that in the as-deposited oxide. It is found that diffused-in water molecules, in order to satisfy the water solubility of the oxide, play a compensating role in controlling the oxide charges. Water molecules would continue to diffuse in, and interact with oxide charges and produce charges with reverse polarity that compensate the existing oxide charges until water solubility is satisfied.

  4. The Annual Cycle of Water Vapor on Mars as Observed by the Thermal Emission Spectrometer

    Science.gov (United States)

    Smith, Michael D.; Vondrak, Richard R. (Technical Monitor)

    2001-01-01

    Spectra taken by the Mars Global Surveyor Thermal Emission Spectrometer (TES) have been used to monitor the latitude, longitude, and seasonal dependence of water vapor for over one full Martian year (March 1999-March 2001). A maximum in water vapor abundance is observed at high latitudes during mid-summer in both hemispheres, reaching a maximum value of approximately 100 pr-micrometer in the north and approximately 50 pr-micrometer in the south. Low water vapor abundance (water vapor. The latitudinal and seasonal dependence of the decay of the northern summer water vapor maximum implies cross-equatorial transport of water to the southern hemisphere, while there is little or no corresponding transport during the decay of the southern hemisphere summer maximum. The latitude-longitude dependence of annually-averaged water vapor (corrected for topography) has a significant positive correlation with albedo and significant negative correlations with thermal inertia and surface pressure. Comparison of TES results with those retrieved from the Viking Orbiter Mars Atmospheric Water Detectors (MAWD) experiments shows some similar features, but also many significant differences. The southern hemisphere maximum observed by TES was not observed by MAWD and the large latitudinal gradient in annually-averaged water vapor observed by MAWD does not appear in the TES results.

  5. Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

    Science.gov (United States)

    Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

    2013-08-01

    Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  6. Low-Pressure Chemical Vapor (LPCVD) Graphene Growth Study and Raman Characterization

    Science.gov (United States)

    2013-12-01

    films deposited for a growth study is discussed. Low pressure chemical vapor deposition was utilized to grow graphene layers onto copper foil substrates...exfoliation method (3); however, recent efforts have focused on graphene synthesis by conventional methods, such as chemical vapor deposition ( CVD ) and...ultrahigh vacuum, high temperature annealing (i.e., epitaxial graphene from SiC) (4, 5). CVD , in particular, is a promising growth technique because

  7. Design, demonstration and evaluation of a thermal enhanced vapor extraction system

    Energy Technology Data Exchange (ETDEWEB)

    Phelan, J.; Reavis, B.; Swanson, J. [and others

    1997-08-01

    The Thermal Enhanced Vapor Extraction System (TEVES), which combines powerline frequency heating (PLF) and radio frequency (RF) heating with vacuum soil vapor extraction, was used to effectively remove volatile organic compounds (VOCs) and semi-volatile organic compounds (SVOCs) from a pit in the chemical waste landfill (CWL) at Sandia National Laboratories (SNL) within a two month heating period. Volume average temperatures of 83{degrees}C and 112{degrees}C were reached for the PLF and RF heating periods, respectively, within the 15 ft x 45 ft x 18.5 ft deep treated volume. This resulted in the removal of 243 lb of measured toxic organic compounds (VOCs and SVOCs), 55 gallons of oil, and 11,000 gallons of water from the site. Reductions of up to 99% in total chromatographic organics (TCO) was achieved in the heated zone. Energy balance calculations for the PLF heating period showed that 36.4% of the heat added went to heating the soil, 38.5% went to evaporating water and organics, 4.2% went to sensible heat in the water, 7.1% went to heating the extracted air, and 6.6% was lost. For the RF heating period went to heating the soil, 23.5% went to evaporating water and organics, 2.4% went to sensible heat in the water, 7.5% went to heating extracted air, and 9.7% went to losses. Energy balance closure was 92.8% for the PLF heating and 98% for the RF heating. The energy input requirement per unit soil volume heated per unit temperature increase was 1.63 kWH/yd{sup 3}-{degrees}C for PLF heating and 0.73 kWH/yd{sup 3}{degrees}C for RF heating.

  8. Chemical vapor deposition of fluorine-doped zinc oxide

    Science.gov (United States)

    Gordon, Roy G.; Kramer, Keith; Liang, Haifan

    2000-06-06

    Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

  9. The Effect of Water Vapor on the Thermal Decomposition of Pyrite in N2 Atmosphere

    Directory of Open Access Journals (Sweden)

    Nesrin BOYABAT

    2009-03-01

    Full Text Available In this study, the effect of water vapor on the thermal decomposition of pyrite mineral in nitrogen atmosphere has been investigated in a horizontal tube furnace. Temperature, time and water vapor concentration were used as experimental parameters. According to the data obtained at nitrogen/ water vapor environment, it was observed that the water vapor on the decomposition of pyrite increased the decomposition rate. The decomposition reaction is well represented by the "shrinking core" model and can be divided into two regions with different rate controlling step. The rate controlling steps were determined from the heat transfer through the gas film for the low conversions, while it was determined from the mass transfer through product ash layer for the high conversions. The activation energies of this gas and ash film mechanisms were found to be 77 and 81 kJ/mol-1, respectively.

  10. Efficiency enhancement of the ocean thermal energy conversion system with a vapor–vapor ejector

    Directory of Open Access Journals (Sweden)

    Ho-Saeng Lee

    2015-03-01

    Full Text Available In this article, 20 kW ocean thermal energy conversion with a vapor–vapor ejector is newly proposed. As a vapor–vapor ejector is installed in the system, the pressure difference between the turbine inlet and outlet increases. Therefore, the amount of the working fluid required for the total turbine work of 20 kW is less than when no vapor–vapor ejector is installed. Therefore, installing a vapor–vapor ejector in the system decreases the evaporation capacity and the pump work. The performance analysis considered the outlet pressure of the high-stage turbine, the mass flow ratio of the working fluid at the outlet of a separator just after the high-stage turbine, and the nozzle diameters of the vapor–vapor ejector. As the outlet pressure of high-stage turbine becomes lower, the turbine gross power of high-stage turbine and system efficiency increase although lower outlet pressure of high-stage turbine results in lower ejector performance. Similarly, in terms of mass flow ratio, the highest system efficiency was shown at mass flow ratio of 0.4 at the outlet of a separator just after the high-stage turbine. On the other hand, the performance of the ejector at mass flow ratio of 0.5 at the outlet of a separator was largest. When the nozzle diameters of the vapor–vapor ejector are properly designed, the vapor–vapor ejector shows the highest performance. After the optimization of the operation parameters, system efficiency of the proposed ocean thermal energy conversion power cycle was 2.47%, relatively 15% higher than that of the basic ocean thermal energy conversion power cycle (2.2%.

  11. Numerical modeling of physical vapor transport under microgravity conditions: Effect of thermal creep and stress

    Science.gov (United States)

    Mackowski, Daniel W.; Knight, Roy W.

    1993-01-01

    One of the most promising applications of microgravity (micro-g) environments is the manufacture of exotic and high-quality crystals in closed cylindrical ampoules using physical vapor transport (PVT) processes. The quality enhancements are believed to be due to the absence of buoyant convection in the weightless environment - resulting in diffusion-limited transport of the vapor. In a typical experiment, solid-phase sample material is initially contained at one end of the ampoule. The sample is made to sublime into the vapor phase and deposit onto the opposite end by maintaining the source at an elevated temperature with respect to the deposit. Identification of the physical factors governing both the rates and uniformity of crystal growth, and the optimization of the micro-g technology, will require an accurate modeling of the vapor transport within the ampoule. Previous micro-g modeling efforts have approached the problem from a 'classical' convective/diffusion formulation, in which convection is driven by the action of buoyancy on thermal and solutal density differences. The general conclusion of these works have been that in low gravity environments the effect of buoyancy on vapor transport is negligible, and vapor transport occurs in a diffusion-limited mode. However, it has been recently recognized than in the non-isothermal (and often low total pressure) conditions encountered in ampoules, the commonly-assumed no-slip boundary condition to the differential equations governing fluid motion can be grossly unrepresentative of the actual situation. Specifically, the temperature gradients can give rise to thermal creep flows at the ampoule side walls. In addition, temperature gradients in the vapor itself can, through the action of thermal stress, lead to bulk fluid convection.

  12. Potentiometric detection of chemical vapors using molecularly imprinted polymers as receptors

    Science.gov (United States)

    Liang, Rongning; Chen, Lusi; Qin, Wei

    2015-07-01

    Ion-selective electrode (ISE) based potentiometric gas sensors have shown to be promising analytical tools for detection of chemical vapors. However, such sensors are only capable of detecting those vapors which can be converted into ionic species in solution. This paper describes for the first time a polymer membrane ISE based potentiometric sensing system for sensitive and selective determination of neutral vapors in the gas phase. A molecularly imprinted polymer (MIP) is incorporated into the ISE membrane and used as the receptor for selective adsorption of the analyte vapor from the gas phase into the sensing membrane phase. An indicator ion with a structure similar to that of the vapor molecule is employed to indicate the change in the MIP binding sites in the membrane induced by the molecular recognition of the vapor. The toluene vapor is used as a model and benzoic acid is chosen as its indicator. Coupled to an apparatus manifold for preparation of vapor samples, the proposed ISE can be utilized to determine volatile toluene in the gas phase and allows potentiometric detection down to parts per million levels. This work demonstrates the possibility of developing a general sensing principle for detection of neutral vapors using ISEs.

  13. High-strength carbon nanotube/carbon composite fibers via chemical vapor infiltration.

    Science.gov (United States)

    Lee, Jaegeun; Kim, Teawon; Jung, Yeonsu; Jung, Kihoon; Park, Junbeom; Lee, Dong-Myeong; Jeong, Hyeon Su; Hwang, Jun Yeon; Park, Chong Rae; Lee, Kun-Hong; Kim, Seung Min

    2016-12-07

    In this study, we have developed an efficient and scalable method for improving the mechanical properties of carbon nanotube (CNT) fibers. The mechanical properties of as-synthesized CNT fibers are primarily limited by their porous structures and the weak bonding between adjacent CNTs. These result in inefficient load transfer, leading to low tensile strength and modulus. In order to overcome these limitations, we have adopted chemical vapor infiltration (CVI) to efficiently fill the internal voids of the CNT fibers with carbon species which are thermally decomposed from gas phase hydrocarbon. Through the optimization of the processing time, temperature, and gas flow velocity, we have confirmed that carbon species formed by the thermal decomposition of acetylene (C2H2) gas successfully infiltrated into porous CNT fibers and densified them at relatively low temperatures (650-750 °C). As a result, after CVI processing of the as-synthesized CNT fibers under optimum conditions, the tensile strength and modulus increased from 0.6 GPa to 1.7 GPa and from 25 GPa to 127 GPa, respectively. The CVI technique, combined with the direct spinning of CNT fibers, can open up a route to the fast and scalable fabrication of high performance CNT/C composite fibers. In addition, the CVI technique is a platform technology that can be easily adapted into other nano-carbon based yarn-like fibers such as graphene fibers.

  14. Dzyaloshinskii-Moriya interaction in Pt/Co/Pt films prepared by chemical vapor deposition with various substrate temperatures

    Directory of Open Access Journals (Sweden)

    M. Quinsat

    2017-05-01

    Full Text Available We deposited perpendicularly magnetized Co(∼1nm/Pt(6nm bilayers by thermal chemical vapor deposition (CVD on top of 3nm thick Pt layer using various deposition temperature. Observed Ms increased with the increase of deposition temperature Ts, and reached the value of pure-Co at Ts = 500°C. We measured a (left-handed negative Dzyaloshinskii-Moriya interaction in CVD films indicating a dominant role of the bottom Pt/Co interface.

  15. Processing Research on Chemically Vapor Deposited Silicon Nitride.

    Science.gov (United States)

    1979-12-01

    34 sea urchins ") predominated, suggesting that formation was primarily from the vapor phase with little of the nodular growths seen at only slightly...deposition parameters on crystallite size, morphology and deposition rate. Geometries include a cold-wall, flat plate reactor (CW) and 4-inch and 1-inch...typical crossections of banded deposits and deposits which showed transitions from amorphous to crystalline morphologies , respectively. Figure 2-5

  16. A mathematical model and simulation results of plasma enhanced chemical vapor deposition of silicon nitride films

    NARCIS (Netherlands)

    Konakov, S.A.; Krzhizhanovskaya, V.V.

    2015-01-01

    We developed a mathematical model of Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon nitride thin films from SiH4-NH3-N2-Ar mixture, an important application in modern materials science. Our multiphysics model describes gas dynamics, chemical physics, plasma physics and electrodynamics.

  17. Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

    Science.gov (United States)

    Smith, York R.; Fuchs, Alan; Meyyappan, M.

    2010-01-01

    Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

  18. Chemical vapor deposition of amorphous tungsten nitride for applications in ultra-large scale interconnect technologies

    Science.gov (United States)

    Kelsey, Jean E.

    Increasing demands on computer chip technology require exploration of novel materials and deposition techniques. The driving need to reduce device dimensions without increasing device delay time has forced a move towards copper interconnects. Copper interconnects require an encapsulating barrier layer to prevent diffusion into the dielectric layer, as well as a passivation layer to protect against oxidation. One potential material for the barrier layer is tungsten nitride (WNx). Tungsten nitride is expected to perform well as a barrier because of its refractory nature and excellent thermal, chemical, and mechanical properties. In addition, it can be deposited in amorphous form. Amorphous materials have no grain boundaries, thereby making grain boundary diffusion, a fast path diffusion mechanism, impossible. In this work, a chemical vapor deposition (CVD) process was developed for the deposition of tungsten nitride. CVD was selected because it has the potential to deposit highly conformal film. High conformality is critical in a barrier layer in order to ensure viable coverage at the bottom and sides of device structures without sacrificing critical space that would be better used by the copper metal. In this manner, the total resistivity of the interconnect is minimized. The CVD WNx process was systematically optimized for film conformality, resistivity and growth rate. This was achieved by thoroughly examining film nucleation and growth characteristics, and analyzing resulting film properties. Adhesion of copper to the CVD films was qualified using stud pull tests, while X-ray diffraction was implemented to determine crystallization temperature of the amorphous phase. Additionally, diffusion barrier properties of the CVD tungsten nitride were assessed using sputter deposited copper, and compared to those of sputter deposited tungsten nitride. Thermally activated barrier failure was studied as a function of barrier thickness using Rutherford backscattering

  19. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  20. A chemical kinetic model for chemical vapor deposition of carbon nanotubes

    Science.gov (United States)

    Raji, K.; Thomas, Shijo; Sobhan, C. B.

    2011-10-01

    Carbon nanotubes (CNTs) are classified among the most promising novel materials due to their exceptional physical properties. Still, optimal fabrication of carbon nanotubes involves a number of challenges. Whatever be the fabrication method, a process optimization can be evolved only on the basis of a good theoretical model to predict the parametric influences on the final product. The work reported here investigates the dependence of the deposition parameters on the controllable parameters for carbon nanotube growth during Chemical vapor deposition (CVD), through a chemical kinetic model. The theoretical model consisted of the design equations and the energy balance equations, based on the reaction kinetics, for the plug flow and the batch reactor, which simulate the CVD system. The numerical simulation code was developed in-house in a g++ environment. The results predicted the growth conditions for CNT: the deposition temperature, pressure and number of atoms, which were found to be influenced substantially by the initial controllable parameters namely the temperature, volumetric flow rate of the carbon precursor, and the reaction time. An experimental study was also conducted on a CVD system developed in the laboratory, to benchmark the computational results. The experimental results were found to agree well with the theoretical predictions obtained from the model.

  1. Biodegradable multifunctional oil production chemicals: Thermal polyaspartates

    Energy Technology Data Exchange (ETDEWEB)

    Ross, R.J. [Donlar Corporation (United States); Ravenscroft, P.D. [BP Exploration Operating Company, (United Kingdom)

    1996-12-31

    The paper deals with biodegradable oil production chemicals. Control of both mineral scale and corrosion with a single, environmentally acceptable material is an ambitious goal. Polyaspartate polymers represent a significant milestone in the attainment of this goal. Thermal polyaspartates (TPA) are polycarboxylate polymers derived via thermal condensation of the naturally occurring amino acid aspartic acid. These protein-like polymers are highly biodegradable and non-toxic, and are produced by an environmentally benign manufacturing process. TPAs exhibit excellent mineral scale inhibition activity and CO{sub 2} corrosion control. Laboratory data on scale inhibition and corrosion control in the North Sea oil field production applications is presented. 8 refs., 2 figs., 6 tabs.

  2. Electron emission from nano-structured carbon films fabricated by hot-filament chemical-vapor deposition and microwave plasma-enhanced chemical vapor deposition

    CERN Document Server

    Park, K H; Lee, K M; Oh, S G; Lee, S I; Koh, K H

    2000-01-01

    The electron-emission characteristics of nano-structured carbon films fabricated by using the HFCVD (hot- filament chemical-vapor deposition) and the MPECVD (microwave plasma-enhanced chemical-vapor deposition) methods with a metal catalyst are presented. According to our observation, neither the formation nor the alignment of nano tubes is absolutely necessary to realize carbon-based electron emitters. However, utilization of chrome as an interlayer between Si substrates and metal catalyst particles results in a great improvement in the emission characteristics and the mechanical stability. Also, fabrication of good electron-emitting carbon films on glass substrates, with sputter-deposited chrome electrodes,at a nominal temperature approx 615 .deg. C was demonstrated.

  3. Germanium-on-Silicon Strain Engineered Materials for Improved Device Performance Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Bharathan, Jayesh Moorkoth

    The primary goal of this research is to develop a chemical vapor deposition process for growing epitaxial films of germanium on silicon (001) substrates with two-dimensional (2-D) morphology, and a low density of threading dislocations. Growth was carried out in a reduced-pressure chemical vapor deposition (RPCVD) system by a two-step growth technique. An accurate knowledge of elastic constants of thin films is important in understanding the effect of strain on material properties. Residual thermal strain was used to measure the Poisson ratio of Ge films grown on Si(001) substrates, by the sin2Psi method and highresolution x-ray diffraction. The Poisson ratio of the Ge films was measured to be 0.25, compared to the bulk value of 0.27. The result was found to be independent of film thickness and defect density, which confirmed that the strain is associated with the elastic response of the film. The study showed that the use of Poisson ratio instead of bulk compliance values yields a more accurate description of the state of in-plane strain present in the film. The experimentally measured in-plane strain in Ge films was found to be lower than the theoretical calculations based on the differential thermal expansion coefficients of Si and Ge. The mechanism of thermal misfit strain relaxation in epitaxial Ge films grown on Si(001) substrates was investigated by x-ray diffraction, and transmission electron microscopy. Lattice misfit strain associated with Ge/(001)Si mismatched epitaxy is relieved by a network of Lomer edge misfit dislocations during the first step of the growth technique. However, thermal misfit strain energy during growth is relieved by interdiffusion mechanism at the heterointerface. Two SiGe compositions containing 0.5 and 6.0 atomic percent Si were detected that relieve the thermal mismatch strain associated with the two steps of the growth process. This study discusses the importance of interdiffusion mechanism in relieving small misfit strains

  4. Chemical Vapor Deposition and Atomic Layer Deposition of Coatings for Mechanical Applications

    Science.gov (United States)

    Doll, G. L.; Mensah, B. A.; Mohseni, H.; Scharf, T. W.

    2010-01-01

    Chemical vapor deposition (CVD) of films and coatings involves the chemical reaction of gases on or near a substrate surface. This deposition method can produce coatings with tightly controlled dimensions and novel structures. Furthermore, the non-line-of-sight-deposition capability of CVD facilitates the coating of complex-shaped mechanical components. Atomic layer deposition (ALD) is also a chemical gas phase thin film deposition technique, but unlike CVD, it utilizes “self-limiting” surface adsorption reactions (chemisorption) to control the thickness of deposited films. This article provides an overview of CVD and ALD, discusses some of their fundamental and practical aspects, and examines their advantages and limitations versus other vapor processing techniques such as physical vapor deposition in regard to coatings for mechanical applications. Finally, site-specific cross-sectional transmission electron microscopy inside the wear track of an ALD ZnO/ZrO2 8 bilayers nanolaminate coating determined the mechanisms that control the friction and wear.

  5. A new technique to assess dermal absorption of chemical vapor in vitro by thermogravimetric analysis (TGA)

    OpenAIRE

    Rauma, Matias

    2008-01-01

    There is a huge lack of dermal uptake data for chemicals, and it is frequent with large variations in reported permeability coefficients for chemicals with more than one data set, showing the need for a new and standardized in vitro method. The overall aim of this thesis was to develop the new method of measuring dermal absorption of chemical vapor using the TGA method. Assessment of dermal absorption by TGA (Study I) Round pieces (ø8 mm) of pig epidermis were placed on ...

  6. Pediatric hand burns: thermal, electrical, chemical.

    Science.gov (United States)

    Choi, Mark; Armstrong, Milton B; Panthaki, Zubin J

    2009-07-01

    Young children often use their hands for exploration of their surroundings, and this often leads to the hand being the primary site of injury. Because of this and many associated factors, burns of the pediatric hands are relatively common, with thermal injuries being the most frequent. Electrical and chemical etiologies contribute a minor portion of the burn injuries in the pediatric population. Some key differences should be considered in the management of hand burns in a pediatric patient versus an adult. In general, minor superficial burns will heal satisfactorily only with topical care. Deeper partial-thickness and full-thickness burns, however, require surgical interventions. Special care should always be taken in the management of electrical and chemical burns because the pathophysiology of these injuries are unique. Treatment of pediatric hand burns should also involve close and thorough follow-up to assess not only for healing and restoration of function of the injury but also for psychologic and emotional trauma.

  7. Assessment and control of chemical risk from organic vapors for attendants in a gas station

    Directory of Open Access Journals (Sweden)

    Stephanie Ehmig Santillán

    2015-12-01

    Full Text Available This research comprises monitoring, assessment and recommendations for chemical risk originating from organic vapors (benzene, toluene and xylene of fuel (super and extra gasoline to which attendants at a gas station are exposed. Given the concentration measured of organic vapors (benzene, toluene and xylene the chemical risk to which attendants are exposed in the supply area is acceptable. Control measures are recommended to ensure healthy working conditions for gas station attendants and also to avoid occurrence of occupational diseases in the medium or long term

  8. Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

    2017-03-01

    Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

  9. Lapping of chemical vapor deposited diamond films using copper vapor laser

    Energy Technology Data Exchange (ETDEWEB)

    Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

    1999-04-01

    Laser lapping of diamond films is performed with focused beam of copper vapor laser. Both spherical and rod-shape laser beam are used. Diamond surface is scanned at various scan speeds(0.125, 0.5, 0.75 mm/sec) and beam shifts(5, 10, 20, 40, 100 {mu}m). At 0.125 mm/sec, 10 {mu}m scan condition, the level difference of diamond surface of about 700 {mu}m over 20 mm is reduced to 200 {mu}m. In addition, surface roughness is also improved from 3.53 {mu}m to 2.47 {mu}m at 5 {mu}m beam shift. But, at higher beam shift than 10{mu}m, laser scan makes the surface rougher, which is considered to be due to the non uniform spatial distribution of laser energy. It is concluded that homogenized laser beam with high average power is needed for large area laser lapping of diamond films at appreciable rates. 12 refs., 9 figs.

  10. Copper Oxidation through Nucleation Sites of Chemical Vapor Deposited Graphene

    DEFF Research Database (Denmark)

    Luo, Birong; Whelan, Patrick Rebsdorf; Shivayogimath, Abhay

    2016-01-01

    and amorphous carbon. These defects would serve as a pathway for the diffusion of 02 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has...

  11. Improved thermal lattice Boltzmann model for simulation of liquid-vapor phase change

    Science.gov (United States)

    Li, Qing; Zhou, P.; Yan, H. J.

    2017-12-01

    In this paper, an improved thermal lattice Boltzmann (LB) model is proposed for simulating liquid-vapor phase change, which is aimed at improving an existing thermal LB model for liquid-vapor phase change [S. Gong and P. Cheng, Int. J. Heat Mass Transfer 55, 4923 (2012), 10.1016/j.ijheatmasstransfer.2012.04.037]. First, we emphasize that the replacement of ∇ .(λ ∇ T ) /∇.(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) is an inappropriate treatment for diffuse interface modeling of liquid-vapor phase change. Furthermore, the error terms ∂t 0(T v ) +∇ .(T vv ) , which exist in the macroscopic temperature equation recovered from the previous model, are eliminated in the present model through a way that is consistent with the philosophy of the LB method. Moreover, the discrete effect of the source term is also eliminated in the present model. Numerical simulations are performed for droplet evaporation and bubble nucleation to validate the capability of the model for simulating liquid-vapor phase change. It is shown that the numerical results of the improved model agree well with those of a finite-difference scheme. Meanwhile, it is found that the replacement of ∇ .(λ ∇ T ) /∇ .(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) leads to significant numerical errors and the error terms in the recovered macroscopic temperature equation also result in considerable errors.

  12. Hierarchical chrysanthemum-flower-like carbon nanomaterials grown by chemical vapor deposition

    Science.gov (United States)

    Ding, Er-Xiong; Geng, Hong-Zhang; Wang, Jing; Luo, Zhi-Jia; Li, Guangfen; Wang, Wen-Yi; Li, Lin-Ge; Yang, Hai-Jie; Da, Shi-Xun; Wang, Jie; Jiang, Hua; Kauppinen, Esko I.

    2016-02-01

    Novel hierarchical chrysanthemum-flower-like carbon nanomaterials (CFL-CNMs) were synthesized by thermal chemical vapor deposition based on acetylene decomposition. A scanning electron microscope and a transmission electron microscope were employed to observe the morphology and structure of the unconventional nanostructures. It is found that the CFL-CNMs look like a blooming chrysanthemum with a stem rather than a spherical flower. The carbon flower has an average diameter of 5 μm, an average stem diameter of 150 nm, branch diameters ranging from 20 to 70 nm, and branch lengths ranging from 0.5 to 3 μm. The morphologies of the CFL-CNMs are unlike any of those previously reported. Fishbone-like carbon nanofibers with a spindle-shaped catalyst locating at the tip can also be found. Furthermore, the catalyst split was proposed to elucidate the formation mechanism of CFL-CNMs. A large and glomerate catalyst particle at the tip of the carbon nanofiber splits into smaller catalyst particles which are catalytic-active points for branch formation, resulting in the formation of CFL-CNMs.

  13. Initiated chemical vapor deposited nanoadhesive for bonding National Ignition Facility's targets

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Tom [Univ. of California, Berkeley, CA (United States)

    2016-05-19

    Currently, the target fabrication scientists in National Ignition Facility Directorate at Lawrence Livermore National Laboratory (LLNL) is studying the propagation force resulted from laser impulses impacting a target. To best study this, they would like the adhesive used to glue the target substrates to be as thin as possible. The main objective of this research project is to create adhesive glue bonds for NIF’s targets that are ≤ 1 μm thick. Polyglycidylmethacrylate (PGMA) thin films were coated on various substrates using initiated chemical vapor deposition (iCVD). Film quality studies using white light interferometry reveal that the iCVD PGMA films were smooth. The coated substrates were bonded at 150 °C under vacuum, with low inflow of Nitrogen. Success in bonding most of NIF’s mock targets at thicknesses ≤ 1 μm indicates that our process is feasible in bonding the real targets. Key parameters that are required for successful bonding were concluded from the bonding results. They include inert bonding atmosphere, sufficient contact between the PGMA films, and smooth substrates. Average bond strength of 0.60 MPa was obtained from mechanical shearing tests. The bonding failure mode of the sheared interfaces was observed to be cohesive. Future work on this project will include reattempt to bond silica aerogel to iCVD PGMA coated substrates, stabilize carbon nanotube forests with iCVD PGMA coating, and kinetics study of PGMA thermal crosslinking.

  14. Synthesis of Hybrid Silica-Carbon Tubular Structures by Chemical Vapor Deposition with Methane or Ethene

    Directory of Open Access Journals (Sweden)

    Victor R. Sepulveda

    2017-12-01

    Full Text Available Silica microtube and carbon nanotube hybrid structures have been synthesized by catalytic chemical vapor deposition using either methane or ethene as the carbon source, and cobalt-grafted or impregnated silica tubes (200–800 nm as catalyst. The cobalt-grafted catalyst shows a high resistance to reduction (>1000 °C and selectivity to single-wall carbon nanotubes (SWCNT. While ethene deposition produces more carbonaceous material, methane experiments show higher selectivity for SWCNT. After removing the silica with an excess of HF, the carbon nanostructure endured, resulting in a coaxial carbon nanostructure. The novel hybrid nanostructures obtained consist of a submicron-sized tube, with walls that are formed by a succession of carbon/silica/carbon layers to which multiwall (20–25 nm and/or single-wall (0.6–2.0 nm carbon nanotubes are attached. This synthesis approach combines the mechanical properties of carbon nanotubes and the thermal properties of silica tubes into a synergetic nanostructured material, opening further possibilities for polymer reinforcement and potential applications in catalysis.

  15. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  16. Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

    KAUST Repository

    Hussain, Aftab M.

    2013-04-01

    Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

  17. Vaporization of zinc during thermal treatment of ZnO with tetrabromobisphenol A (TBBPA)

    Energy Technology Data Exchange (ETDEWEB)

    Grabda, Mariusz, E-mail: mariusz@mail.tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 1,1 Katahira, 2-Chome, Aoba-ku, Sendai 980-8577 (Japan); Institute of Environmental Engineering of the Polish Academy of Sciences, M. Sklodowska-Curie 34, 41-819 Zabrze (Poland); Oleszek-Kudlak, Sylwia [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 1,1 Katahira, 2-Chome, Aoba-ku, Sendai 980-8577 (Japan); Institute of Environmental Engineering of the Polish Academy of Sciences, M. Sklodowska-Curie 34, 41-819 Zabrze (Poland); Shibata, Etsuro; Nakamura, Takashi [Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 1,1 Katahira, 2-Chome, Aoba-ku, Sendai 980-8577 (Japan)

    2011-03-15

    In the present work we investigate the vaporization of zinc or its compounds during thermal treatment of ZnO with tetrabromobisphenol A. Samples of 2 g of ZnO:TBBPA (3.34:1) were isothermally heated in a laboratory-scale furnace at temperatures from 490 deg, C to 950 deg. C, and the solid, condensed and gaseous products formed were analyzed by X-ray diffraction analysis, electron probe microanalysis, inductively coupled plasma analysis, ion chromatography, and gas chromatography coupled with mass spectrometry. The results obtained indicate that the vaporization of ZnBr{sub 2} formed strongly depends on heating time and temperature, yet is restrained by char, if formed with sufficient yield (above 15 wt%). Starting from 850 deg. C, this char commences carbothermic reduction of any remaining ZnO, which from then begins to evaporate as zinc metal vapor. Volatilization of zinc is completed at 950 deg. C. The presence of 5 vol.% of oxygen has no significant effect on the vaporization of formed ZnBr{sub 2}, the carbothermic reduction or the volatilization of metallic zinc. Strongly oxidizing conditions (20 vol.% of oxygen), however, boost the oxidation of char and thus the vaporization of ZnBr{sub 2}, but prevent carbothermic reduction of any un-reacted ZnO by depleting this char.

  18. Thin cuprous oxide films prepared by thermal oxidation of copper foils with water vapor

    Energy Technology Data Exchange (ETDEWEB)

    Liang Jianbo, E-mail: liangjienbo1980@yahoo.co.jp [Department of Frontier Materials,Nagoya Institute of Technology, Nagoya 4668555 (Japan); Kishi, Naoki; Soga, Tetsuo [Department of Frontier Materials,Nagoya Institute of Technology, Nagoya 4668555 (Japan); Jimbo, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya 4668555 (Japan); Ahmed, Mohsin [Department of Frontier Materials,Nagoya Institute of Technology, Nagoya 4668555 (Japan)

    2012-01-31

    We present an improved preparation method for the growth of high quality crystals of cuprous oxide films grown by thermal oxidation of cupper foils with water vapor. This method proved to be good for preparing cuprous oxide films with high purity and large grain size. X-ray diffraction studies revealed the formation of Cu{sub 2}O films with preferred (111) orientation. The cuprous oxide diodes fabricated by the above technique have been studied using current-voltage method.

  19. Modeling of chemical vapor deposition. III. Silicon epitaxy from chlorosilanes

    Science.gov (United States)

    Korec, J.

    1983-02-01

    The approach presented in part I is applied here to model epitaxial growth of silicon from SiH 2Cl 2, SiHCl 3 and SiCl 4. We adopt the system of chemical reactions proposed by Nishizawa and Nihira and we assume the rate determining step to be the chemical reaction between adsorbed SiCl 2 and gaseous H 2. The basis of this approach is the computation of the activity of silicon in the gas phase near the substrate surface from the balance between the rate of mass transport in the gas phase and surface processes. The considered surface processes are: adsorption and surface diffusion of SiCl 2 and heterogenous chemical reaction. The calculated growth rate of the film agrees with experimental data for a wide range of technological conditions.

  20. Vacuum Vaporization Technique for Latent Fingerprints Development on Thermal Papers using Lawsone Natural Products

    Science.gov (United States)

    Phungyimnoi, N.; Eksinitkun, G.; Phutdhawong, W.

    2017-09-01

    The vacuum vaporization technique is widely used to develop of visualized latent fingerprints on substrate surface for forensics investigation. In this study, we reported the first utilization of lawsone in the vacuum vaporization technique. The lawsone was sublimation in vacuum and showed the detected latent fingerprints on thermal papers. The method involves hanging the thermal paper samples 5, 10, 15 cm above a heating source with dispersed lawsone solids in a vacuum chamber. The optimized condition for lawsone sublimation are 50, 100, 150 mg with low-vacuum (0.1 mbar) and vaporizing temperature at 40-60°C. The sample fingerprints were left for 1, 3, 7 and 30 days before examination comparison between lawsone and fingerprint ink pad using an Automated Fingerprint Identification (AFIS). The resulted showed that using 100 mg lawsone sublimation on thermal paper at the range of 10 cm evidenced the clear, detectable minutiae which can be used for visualization and identification of latent prints without the background black staining known. Thus, this study might be interested application for developing latent fingerprints as a solvent free technique and non-hazardous materials.

  1. Evaluation of Chemical Warfare Agent Percutaneous Vapor Toxicity: Derivation of Toxicity Guidelines for Assessing Chemical Protective Ensembles.

    Energy Technology Data Exchange (ETDEWEB)

    Watson, A.P.

    2003-07-24

    Percutaneous vapor toxicity guidelines are provided for assessment and selection of chemical protective ensembles (CPEs) to be used by civilian and military first responders operating in a chemical warfare agent vapor environment. The agents evaluated include the G-series and VX nerve agents, the vesicant sulfur mustard (agent HD) and, to a lesser extent, the vesicant Lewisite (agent L). The focus of this evaluation is percutaneous vapor permeation of CPEs and the resulting skin absorption, as inhalation and ocular exposures are assumed to be largely eliminated through use of SCBA and full-face protective masks. Selection of appropriately protective CPE designs and materials incorporates a variety of test parameters to ensure operability, practicality, and adequacy. One aspect of adequacy assessment should be based on systems tests, which focus on effective protection of the most vulnerable body regions (e.g., the groin area), as identified in this analysis. The toxicity range of agent-specific cumulative exposures (Cts) derived in this analysis can be used as decision guidelines for CPE acceptance, in conjunction with weighting consideration towards more susceptible body regions. This toxicity range is bounded by the percutaneous vapor estimated minimal effect (EME{sub pv}) Ct (as the lower end) and the 1% population threshold effect (ECt{sub 01}) estimate. Assumptions of exposure duration used in CPE certification should consider that each agent-specific percutaneous vapor cumulative exposure Ct for a given endpoint is a constant for exposure durations between 30 min and 2 hours.

  2. Physico-chemical mechanism for the vapors sensitivity of photoluminescent InP quantum dots

    Science.gov (United States)

    Prosposito, P.; De Angelis, R.; De Matteis, F.; Hatami, F.; Masselink, W. T.; Zhang, H.; Casalboni, M.

    2016-03-01

    InP/InGaP surface quantum dots are interesting materials for optical chemical sensors since they present an intense emission at room temperature, whose intensity changes rapidly and reversibly depending on the composition of the environmental atmosphere. We present here their emission properties by time resolved photoluminescence spectroscopy investigation and we discuss the physico-chemical mechanism behind their sensitivity to the surrounding atmosphere. Photoluminescence transients in inert atmosphere (N2) and in solvent vapours of methanol, clorophorm, acetone and water were measured. The presence of vapors of clorophorm, acetone and water showed a very weak effect on the transient times, while an increase of up to 15% of the decay time was observed for methanol vapour exposure. On the basis of the vapor molecule nature (polarity, proticity, steric hindrance, etc.) and of the interaction of the vapor molecules with the quantum dots surface a sensing mechanism involving quantum dots non-radiative surface states is proposed.

  3. Ballistic transport in graphene grown by chemical vapor deposition

    NARCIS (Netherlands)

    Calado, V.E.; Zhu, S.E.; Goswami, S.; Xu, Q.; Watanabe, K.; Taniguchi, T.; Janssen, G.C.A.M.; Vandersypen, L.M.K.

    2014-01-01

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be

  4. Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets

    NARCIS (Netherlands)

    Kwieciñski, Wojciech; Sotthewes, Kai; Poelsema, Bene; Zandvliet, Harold J.W.; Bampoulis, Pantelis

    2017-01-01

    Direct growth of flat micrometer-sized bilayer graphene islands in between molybdenum disulfide sheets is achieved by chemical vapor deposition of ethylene at about 800 °C. The temperature assisted decomposition of ethylene takes place mainly at molybdenum disulfide step edges. The carbon atoms

  5. Growth Process Conditions of Tungsten Oxide Thin Films Using Hot-Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Houweling, Z.S.|info:eu-repo/dai/nl/251874486; Geus, J.W.; de Jong, M.; Harks, P.P.R.M.L.; van der Werf, C.H.M.; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2011-01-01

    We report the growth conditions of nanostructured tungsten oxide (WO3−x) thin films using hot-wire chemical vapor deposition (HWCVD). Two tungsten filaments were resistively heated to various temperatures and exposed to an air flow at various subatmospheric pressures. The oxygen partial pressure was

  6. Chemical Vapor Deposition of Atomically-Thin Molybdenum Disulfide (MoS2)

    Science.gov (United States)

    2015-03-01

    DISULFIDE ( MoS2 ) Daniel Kaplan Kendall Mills Venkataraman Swaminathan March 2015 Approved for public release...4. TITLE AND SUBTITLE CHEMICAL VAPOR DEPOSITION OF ATOMICALLY-THIN MOLYBDENUM DISULFIDE ( MoS2 ) 5a. CONTRACT NUMBER 5b. GRANT NUMBER...distribution is unlimited. 13. SUPPLEMENTARY NOTES 14. ABSTRACT A method of synthesizing monolayers of molybdenum disulfide ( MoS2 ) via

  7. Single Molecule Source Reagents for Chemical Vapor Deposition of B- Silicon Carbide

    Science.gov (United States)

    1992-12-10

    Phase I conclusively showed the feasibility of rational design of single molecule -source reagents that could lead to improvements in the chemical...vapor deposition of stoichiometric Beta silicon carbide. Four single molecule sources were synthesized, their decomposition pathways studied, and their

  8. Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

    NARCIS (Netherlands)

    Mohammadi, V.; De Boer, W.B.; Scholtes, T.L.M.; Nanver, L.K.

    2012-01-01

    The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and

  9. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  10. Plasma enhanced chemical vapor deposition silicon oxynitride optimized for application in integrated optics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Driessen, A.; Lambeck, Paul; Hilderink, L.T.H.; Linders, Petrus W.C.; Popma, T.J.A.

    1999-01-01

    Silicon Oxynitride layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition. The process is optimized with respect to deposition of layers with excellent uniformity in the layer thickness, high homogeneity of the refractive index and good reproducibility of the layer

  11. Influence of the catalyst type on the growth of carbon nanotubes via methane chemical vapor deposition

    NARCIS (Netherlands)

    Jodin, Lucie; Dupuis, Anne-Claire; Rouvière, Emmanuelle; Reiss, Peter

    2006-01-01

    The preparation of the catalyst is one of the key parameters which governs the quality of carbon nanotubes (CNTs) grown by catalyzed chemical vapor deposition (CVD). We investigated the influence of three different procedures of catalyst preparation on the type and diameter of CNTs formed under

  12. Tip-based chemical vapor deposition with a scanning nano-heater

    NARCIS (Netherlands)

    Gaitas, A.

    2013-01-01

    In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely

  13. Tandem solar cells deposited using hot-wire chemical vapor deposition

    NARCIS (Netherlands)

    Veen, M.K. van

    2003-01-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique

  14. Optimization of plasma-enhanced chemical vapor deposition silicon oxynitride layers for integrated optics applications

    NARCIS (Netherlands)

    Hussein, M.G.; Worhoff, Kerstin; Sengo, G.; Sengo, G.; Driessen, A.

    2007-01-01

    Silicon oxynitride $(SiO_{x}N_{y}:H)$ layers were grown from 2% $SiH_{4}/N_{2}$ and $N_{2}O$ gas mixtures by plasma-enhanced chemical vapor deposition (PECVD). Layer properties such as refractive index, deposition rate, thickness non-uniformity and hydrogen bond content were correlated to the

  15. Kinetic Study of the Chemical Vapor Deposition of Tantalum in Long Narrow Channels

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Petrushina, Irina

    2016-01-01

    A kinetic study of the chemical vapor deposition of tantalum in long narrow channels is done to optimize the industrial process for the manufacture of tantalum coated plate heat exchangers. The developed model fits well at temperatures between 750 and 850 °C, and in the pressure range of25–990 mbar...

  16. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    NARCIS (Netherlands)

    Deelen, J. van; Illiberi, A.; Kniknie, B.; Beckers, E.H.A.; Simons, P.J.P.M.; Lankhorst, A.

    2014-01-01

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/min were obtained. The reaction

  17. Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

    NARCIS (Netherlands)

    Deelen, J. van; Illiberi, A.; Kniknie, B.; Beckers, E.H.A.; Simons, P.J.P.M.; Lankhorst, A.

    2013-01-01

    The deposition of zinc oxide has been performed by atmospheric pressure chemical vapor deposition and trends in growth rates are compared with the literature. Diethylzinc and tertiary butanol were used as the primary reactants and deposition rates above 800 nm/minwere obtained. The reaction

  18. Silicon nitride at high growth rate using hot wire chemical vapor deposition

    NARCIS (Netherlands)

    Verlaan, V.

    2008-01-01

    Amorphous silicon nitride (SiNx) is a widely studied alloy with many commercial applications. This thesis describes the application of SiNx deposited at high deposition rate using hot wire chemical vapor deposition (HWCVD) for solar cells and thin film transistors (TFTs). The deposition process of

  19. Low-level doping of nitrogen to multilayered graphene by chemical vapor deposition of methane including melamine vapor

    Science.gov (United States)

    Bandow, Shunji; Yoshida, Takahiro

    2017-12-01

    Growth of graphene doped with the low level of nitrogen is carried out on the copper foil by conventional chemical vapor deposition. Melamine is used as nitrogen source. Melamine vapor is generated by heating and carried by an argon flow (carrier flow) to a main flow of Ar including methane. Ratio of the number of molecules, melamine/methane, is controlled by changing the mixing rate of the carrier flow and the main flow. Measurements of Raman scattering, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopy and sheet resistance clarify the feature of prepared sample. At low melamine/methane ratio in the order of 10-3, quaternary N doped graphene is grown. Then the growth of pyridinic N doped graphene is going to start as increasing the melamine/methane ratio in the order of 10-2. Magnitude of the sheet resistance per one graphene layer decreases by 75% when the nitrogen is in the quaternary site, while it increases twice or more when the pyridine-like configuration increases.

  20. Photo, thermal and chemical degradation of riboflavin

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Sheraz

    2014-08-01

    Full Text Available Riboflavin (RF, also known as vitamin B2, belongs to the class of water-soluble vitamins and is widely present in a variety of food products. It is sensitive to light and high temperature, and therefore, needs a consideration of these factors for its stability in food products and pharmaceutical preparations. A number of other factors have also been identified that affect the stability of RF. These factors include radiation source, its intensity and wavelength, pH, presence of oxygen, buffer concentration and ionic strength, solvent polarity and viscosity, and use of stabilizers and complexing agents. A detailed review of the literature in this field has been made and all those factors that affect the photo, thermal and chemical degradation of RF have been discussed. RF undergoes degradation through several mechanisms and an understanding of the mode of photo- and thermal degradation of RF may help in the stabilization of the vitamin. A general scheme for the photodegradation of RF is presented.

  1. Chemical vapor deposition and characterization of titanium dioxide thin films

    Science.gov (United States)

    Gilmer, David Christopher

    1998-12-01

    The continued drive to decrease the size and increase the speed of micro-electronic Metal-Oxide-Semiconductor (MOS) devices is hampered by some of the properties of the SiOsb2 gate dielectric. This research has focused on the CVD of TiOsb2 thin films to replace SiOsb2 as the gate dielectric in MOS capacitors and transistors. The relationship of CVD parameters and post-deposition anneal treatments to the physical and electrical properties of thin films of TiOsb2 has been studied. Structural and electrical characterization of TiOsb2 films grown from the CVD precursors tetraisopropoxotitanium (IV) (TTIP) and TTIP plus Hsb2O is described in Chapter 3. Both types of deposition produced stoichiometric TiOsb2 films comprised of polycrystalline anatase, but the interface properties were dramatically degraded when water vapor was added. Films grown with TTIP in the presence of Hsb2O contained greater than 50% more hydrogen than films grown using only TTIP and the hydrogen content of films deposited in both wet and dry TTIP environments decreased sharply with a post deposition Osb2 anneal. A significant thickness variation of the dielectric constant was observed which could be explained by an interfacial oxide and the finite accumulation thickness. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 38, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 4 discusses the low temperature CVD of crystalline TiOsb2 thin films deposited using the precursor tetranitratotitanium (IV), TNT, which produces crystalline TiOsb2 films of the anatase phase in UHV-CVD at temperatures as low as 184sp°C. Fabricated TiOsb2 capacitors exhibited electrically equivalent SiOsb2 gate dielectric thicknesses and leakage current densities as low as 17, and 1×10sp{-8} Amp/cmsp2 respectively. Chapter 5 describes the results of a comparison of physical and electrical properties between TiOsb2 films grown via LPCVD using

  2. Ballistic transport in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Calado, V. E.; Goswami, S.; Xu, Q.; Vandersypen, L. M. K., E-mail: l.m.k.vandersypen@tudelft.nl [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Zhu, Shou-En; Janssen, G. C. A. M. [Micro and Nano Engineering Laboratory, Precision and Microsystems Engineering, Delft University of Technology, 2628 CD Delft (Netherlands); Watanabe, K.; Taniguchi, T. [Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-01-13

    In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

  3. Water vapor flow and high thermal resistance insulation systems for metal buildings

    Energy Technology Data Exchange (ETDEWEB)

    Kelso, R.M.

    1983-01-01

    In response to increasing energy costs, high thermal resistance insulation systems are being marketed for pre-engineered metal buildings. Historically, blanket insulation has been installed between the skin and the structure of these buildings. The new insulation systems generally are installed inside the structure; thus the structure is colder and, unless an effective retarder is included, water vapor condensation problems can result. While the vapor permeance of various insulation facing materials is documented, the effect of such field conditions as seams and penetrations is less well known. Permeance tests were performed on samples of foil-kraft paper insulation facing with two seams and two penetration configurations. The tests show that seams can multiply the permeance of the vapor retarder by factors of 1.2 or more and penetrations can multiply the permeance by 3 or more. The theory of vapor flow analysis is reviewed and compared with the test results and presented graphically. Possible applications and suggestions for further investigation are discussed.

  4. Water vapor flow and high thermal resistance insulation systems for metal buildings

    Energy Technology Data Exchange (ETDEWEB)

    Kelso, R.M.

    1981-12-01

    In response to increasing energy costs, high thermal resistance insulation systems are being marketed for pre-engineered metal buildings. Historically, blanket insulation has been installed between the skin and the structure of these buildings. The new insulation systems generally are installed inside the structure; thus the structure is colder and, unless an effective retarder is included, water vapor condensation problems can result. While the vapor permeance of various insulation facing materials is documented, the effect of such field conditions as seams and penetrations is less well known. Permeance tests were performed on samples of foil-kraft paper insulation facing with two seams and two penetration configurations. The tests show that seams can multiply the permeance of the vapor retarder by factors of 1.2 or more and penetrations can multiply the permeance by 3 or more. The theory of vapor flow analysis is reviewed and compared with the test results and presented graphically. Possible applications and suggestions for further investigation are discussed.

  5. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  6. Alcohol vapor sensing by cadmium-doped zinc oxide thick films based chemical sensor

    Science.gov (United States)

    Zargar, R. A.; Arora, M.; Chackrabarti, S.; Ahmad, S.; Kumar, J.; Hafiz, A. K.

    2016-04-01

    Cadmium-doped zinc oxide nanoparticles were derived by simple chemical co-precipitation route using zinc acetate dihydrate and cadmium acetate dihydrate as precursor materials. The thick films were casted from chemical co-precipitation route prepared nanoparticles by economic facile screen printing method. The structural, morphological, optical and electrical properties of the film were characterized relevant to alcohol vapor sensing application by powder XRD, SEM, UV-VIS and DC conductivity techniques. The response and sensitivity of alcohol (ethanol) vapor sensor are obtained from the recovery curves at optimum working temperature range from 20∘C to 50∘C. The result shows that maximum sensitivity of the sensor is observed at 25∘C operating temperature. On varying alcohol vapor concentration, minor variation in resistance has been observed. The sensing mechanism of sensor has been described in terms of physical adsorption and chemical absorption of alcohol vapors on cadmium-doped zinc oxide film surface and inside film lattice network through weak hydrogen bonding, respectively.

  7. Investigation of Thermal Creep and Thermal Stress Effects in Microgravity Physical Vapor Transport

    Science.gov (United States)

    Mackowski, D. W. (Principal Investigator); Knight, R. W. (Principal Investigator)

    1996-01-01

    Reported here are the results of our numerical investigation into the mechanisms which affect the transport and growth processes in physical vapor transport (PVT) crystal growth ampoules. The first part of the report consists of a brief summary of the major accomplishments and conclusions of our work. The second part consists of two manuscripts, submitted to the Journal of Crystal Growth, which provided a detailed description of the findings in our investigation.

  8. Chemical vapor deposition of atomically thin materials for membrane dialysis applications

    Science.gov (United States)

    Kidambi, Piran; Mok, Alexander; Jang, Doojoon; Boutilier, Michael; Wang, Luda; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Atomically thin 2D materials like graphene and h-BN represent a new class of membranes materials. They offer the possibility of minimum theoretical membrane transport resistance along with the opportunity to tune pore sizes at the nanometer scale. Chemical vapor deposition has emerged as the preferable route towards scalable, cost effective synthesis of 2D materials. Here we show selective molecular transport through sub-nanometer diameter pores in graphene grown via chemical vapor deposition processes. A combination of pressure driven and diffusive transport measurements shows evidence for size selective transport behavior which can be used for separation by dialysis for applications such as desalting of biomolecular or chemical solutions. Principal Investigator

  9. Thermal properties of graphite oxide, thermally reduced graphene and chemically reduced graphene

    Science.gov (United States)

    Jankovský, Ondřej; Sedmidubský, David; Lojka, Michal; Sofer, Zdeněk

    2017-07-01

    We compared thermal behavior and other properties of graphite oxide, thermally reduced graphene and chemically reduced graphene. Graphite was oxidized according to the Hofmann method using potassium chlorate as oxidizing agent in strongly acidic environment. In the next step, the formed graphite oxide was chemically or thermally reduced yielding graphene. The mechanism of thermal reduction was studied using STA-MS. Graphite oxide and both thermally and chemically reduced graphenes were analysed by SEM, EDS, elemental combustion analysis, XPS, Raman spectroscopy, XRD and BET. These findings will help for the large scale production of graphene with appropriate chemical composition.

  10. Biomedical photoacoustics beyond thermal expansion using triggered nanodroplet vaporization for contrast-enhanced imaging.

    Science.gov (United States)

    Wilson, Katheryne; Homan, Kimberly; Emelianov, Stanislav

    2012-01-10

    Since being discovered by Alexander Bell, photoacoustics may again be seeing major resurgence in biomedical imaging. Photoacoustics is a non-ionizing, functional imaging modality capable of high contrast images of optical absorption at depths significantly greater than traditional optical imaging techniques. Optical contrast agents have been used to extend photoacoustics to molecular imaging. Here we introduce an exogenous contrast agent that utilizes vaporization for photoacoustic signal generation, providing significantly higher signal amplitude than that from the traditionally used mechanism, thermal expansion. Our agent consists of liquid perfluorocarbon nanodroplets with encapsulated plasmonic nanoparticles, entitled photoacoustic nanodroplets. Upon pulsed laser irradiation, liquid perfluorocarbon undergoes a liquid-to-gas phase transition generating giant photoacoustic transients from these dwarf nanoparticles. Once triggered, the gaseous phase provides ultrasound contrast enhancement. We demonstrate in phantom and animal studies that photoacoustic nanodroplets act as dual-contrast agents for both photoacoustic and ultrasound imaging through optically triggered vaporization.

  11. Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors.

    Science.gov (United States)

    Walters, Diane M; Antony, Lucas; de Pablo, Juan J; Ediger, M D

    2017-07-20

    High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that the structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.

  12. Synthesis of chemical vapor deposition graphene on tantalum wire for supercapacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Li, Mingji, E-mail: limingji@163.com [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Guo, Wenlong [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China); Li, Hongji, E-mail: hongjili@yeah.net [Tianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384 (China); Xu, Sheng [School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 (China); Qu, Changqing; Yang, Baohe [Tianjin Key Laboratory of Film Electronic and Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384 (China)

    2014-10-30

    Highlights: • The capacitance of graphene/tantalum (Ta) wire electrodes is firstly reported. • Graphene was grown on the Ta surface by hot-filament chemical vapor deposition. • Graphene/Ta wire structure is favorable for fast ion and electron transfer. • The graphene/Ta wire electrode shows high capacitive properties. - Abstract: This paper studies the synthesis and electrochemical characterization of graphene/tantalum (Ta) wires as high-performance electrode material for supercapacitors. Graphene on Ta wires is prepared by the thermal decomposition of methane under various conditions. The graphene nanosheets on the Ta wire surface have an average thickness of 1.3–3.4 nm and consist typically of a few graphene monolayers, and TaC buffer layers form between the graphene and Ta wire. A capacitor structure is fabricated using graphene/Ta wire with a length of 10 mm and a diameter of 0.6 mm as the anode and Pt wire of the same size as the cathode. The electrochemical behavior of the graphene/Ta wires as supercapacitor electrodes is characterized by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy in 1 M Na{sub 2}SO{sub 4} aqueous electrolyte. The as-prepared graphene/Ta electrode has highest capacitance of 345.5 F g{sup −1} at current density of 0.5 A g{sup −1}. The capacitance remains at about 84% after 1000 cycles at 10 A g{sup −1}. The good electrochemical performance of the graphene/Ta wire electrode is attributed to the unique nanostructural configuration, high electrical conductivity, and large specific surface area of the graphene layer. This suggests that graphene/Ta wire electrode materials have potential applications in high-performance energy storage devices.

  13. Thermal and Chemical Evolution of Collapsing Filaments

    Energy Technology Data Exchange (ETDEWEB)

    Gray, William J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Scannapieco, Evan [Arizona State Univ., Mesa, AZ (United States). School of Earth and Space Exploration

    2013-01-15

    Intergalactic filaments form the foundation of the cosmic web that connect galaxies together, and provide an important reservoir of gas for galaxy growth and accretion. Here we present very high resolution two-dimensional simulations of the thermal and chemical evolution of such filaments, making use of a 32 species chemistry network that tracks the evolution of key molecules formed from hydrogen, oxygen, and carbon. We study the evolution of filaments over a wide range of parameters including the initial density, initial temperature, strength of the dissociating UV background, and metallicity. In low-redshift, Z ≈ 0.1Z filaments, the evolution is determined completely by the initial cooling time. If this is sufficiently short, the center of the filament always collapses to form dense, cold core containing a substantial fraction of molecules. In high-redshift, Z = 10-3Z filaments, the collapse proceeds much more slowly. This is due mostly to the lower initial temperatures, which leads to a much more modest increase in density before the atomic cooling limit is reached, making subsequent molecular cooling much less efficient. Finally, we study how the gravitational potential from a nearby dwarf galaxy affects the collapse of the filament and compare this to NGC 5253, a nearby starbusting dwarf galaxy thought to be fueled by the accretion of filament gas. In contrast to our fiducial case, a substantial density peak forms at the center of the potential. This peak evolves faster than the rest of the filament due to the increased rate at which chemical species form and cooling occur. We find that we achieve similar accretion rates as NGC 5253, but our two-dimensional simulations do not recover the formation of the giant molecular clouds that are seen in radio observations.

  14. THERMAL AND CHEMICAL EVOLUTION OF COLLAPSING FILAMENTS

    Energy Technology Data Exchange (ETDEWEB)

    Gray, William J. [Lawrence Livermore National Laboratory, P.O. Box 808, L-038, Livermore, CA 94550 (United States); Scannapieco, Evan [School of Earth and Space Exploration, Arizona State University, P.O. Box 871404, Tempe, AZ 85287-1494 (United States)

    2013-05-10

    Intergalactic filaments form the foundation of the cosmic web that connect galaxies together, and provide an important reservoir of gas for galaxy growth and accretion. Here we present very high resolution two-dimensional simulations of the thermal and chemical evolution of such filaments, making use of a 32 species chemistry network that tracks the evolution of key molecules formed from hydrogen, oxygen, and carbon. We study the evolution of filaments over a wide range of parameters including the initial density, initial temperature, strength of the dissociating UV background, and metallicity. In low-redshift, Z Almost-Equal-To 0.1 Z{sub Sun} filaments, the evolution is determined completely by the initial cooling time. If this is sufficiently short, the center of the filament always collapses to form a dense, cold core containing a substantial fraction of molecules. In high-redshift, Z = 10{sup -3} Z{sub Sun} filaments, the collapse proceeds much more slowly. This is mostly due to the lower initial temperatures, which lead to a much more modest increase in density before the atomic cooling limit is reached, making subsequent molecular cooling much less efficient. Finally, we study how the gravitational potential from a nearby dwarf galaxy affects the collapse of the filament and compare this to NGC 5253, a nearby starbursting dwarf galaxy thought to be fueled by the accretion of filament gas. In contrast to our fiducial case, a substantial density peak forms at the center of the potential. This peak evolves faster than the rest of the filament due to the increased rate at which chemical species form and cooling occurs. We find that we achieve similar accretion rates as NGC 5253 but our two-dimensional simulations do not recover the formation of the giant molecular clouds that are seen in radio observations.

  15. Stretchable Electronic Sensors of Nanocomposite Network Films for Ultrasensitive Chemical Vapor Sensing.

    Science.gov (United States)

    Yan, Hong; Zhong, Mengjuan; Lv, Ze; Wan, Pengbo

    2017-11-01

    A stretchable, transparent, and body-attachable chemical sensor is assembled from the stretchable nanocomposite network film for ultrasensitive chemical vapor sensing. The stretchable nanocomposite network film is fabricated by in situ preparation of polyaniline/MoS2 (PANI/MoS2 ) nanocomposite in MoS2 suspension and simultaneously nanocomposite deposition onto prestrain elastomeric polydimethylsiloxane substrate. The assembled stretchable electronic sensor demonstrates ultrasensitive sensing performance as low as 50 ppb, robust sensing stability, and reliable stretchability for high-performance chemical vapor sensing. The ultrasensitive sensing performance of the stretchable electronic sensors could be ascribed to the synergistic sensing advantages of MoS2 and PANI, higher specific surface area, the reliable sensing channels of interconnected network, and the effectively exposed sensing materials. It is expected to hold great promise for assembling various flexible stretchable chemical vapor sensors with ultrasensitive sensing performance, superior sensing stability, reliable stretchability, and robust portability to be potentially integrated into wearable electronics for real-time monitoring of environment safety and human healthcare. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Bifunctional catalyst of graphite-encapsulated iron compound nanoparticle for magnetic carbon nanotubes growth by chemical vapor deposition

    Science.gov (United States)

    Saraswati, Teguh Endah; Prasiwi, Oktaviana Dewi Indah; Masykur, Abu; Anwar, Miftahul

    2017-01-01

    The carbon nanotube has widely taken great attractive in carbon nanomaterial research and application. One of its preparation methods is catalytic chemical vapor deposition (CCVD) using catalyst i.e. iron, nickel, etc. Generally, except the catalyst, carbon source gasses as the precursor are still required. Here, we report the use of the bifunctional material of Fe3O4/C which has an incorporated core/shell structures of carbon-encapsulated iron compound nanoparticles. The bifunctional catalyst was prepared by submerged arc discharge that simply performed using carbon and carbon/iron oxide electrodes in ethanol 50%. The prepared material was then used as a catalyst in thermal chemical vapor deposition at 800°C flown with ethanol vapor as the primer carbon source in a low-pressure condition. This catalyst might play a dual role as a catalyst and secondary carbon source for growing carbon nanotubes at the time. The synthesized products were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD) analysis. The successful formation of carbon nanotubes was assigned by the shifted X-ray diffracted peak of carbon C(002), the iron oxides of Fe3O4 and γ-Fe2O3, and the other peaks which were highly considered to the other carbon allotropes with sp2 hybridization structures. The other assignment was studied by electron microscopy which successfully observed the presence of single-wall carbon nanotubes. In addition, the as-prepared carbon nanotubes have a magnetic property which was induced by the remaining of metal catalyst inside the CNT.

  17. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition

    Science.gov (United States)

    Uno, Kazuyuki; Yamasaki, Yuichiro; Tanaka, Ichiro

    2017-01-01

    The growth mechanisms of zinc oxide and zinc sulfide films by mist chemical vapor deposition (mist-CVD) were experimentally investigated from the viewpoint of mist behaviors and chemical reactions. The proper growth model, either vaporization or the Leidenfrost model, was studied by supplying two kinds of mists with different kinds of sources, such as H2 16O and H2 18O for ZnO growth and ZnCl2 and thiourea for ZnS growth. Moreover, the origin of the oxygen atoms of ZnO was investigated using a quantitative analysis. The role of chloro complex of zinc in the growth of ZnS from aqueous solutions was also examined by systematic studies.

  19. Analysis of Saturn's Thermal Emission at 2.2-cm Wavelength: Spatial Distribution of Ammonia Vapor

    Science.gov (United States)

    Laraia, A. L.; Ingersoll, A. P.; Janssen, Michael A.; Gulkis, Samuel; Oyafuso, Fabiano A.; Allison, Michael D.

    2013-01-01

    This work focuses on determining the latitudinal structure of ammonia vapor in Saturn's cloud layer near 1.5 bars using the brightness temperature maps derived from the Cassini RADAR (Elachi et al., 2004) instrument, which works in a passive mode to measure thermal emission from Saturn at 2.2-cm wavelength. We perform an analysis of five brightness temperature maps that span epochs from 2005 to 2011, which are presented in a companion paper by Janssen et al. (2013a, this issue). The brightness temperature maps are representative of the spatial distribution of ammonia vapor, since ammonia gas is the only effective opacity source in Saturn's atmosphere at 2.2-cm wavelength. Relatively high brightness temperatures indicate relatively low ammonia relative humidity (RH), and vice versa. We compare the observed brightness temperatures to brightness temperatures computed using the Juno atmospheric microwave radiative transfer (JAMRT) program which includes both the means to calculate a tropospheric atmosphere model for Saturn and the means to carry out radiative transfer calculations at microwave frequencies. The reference atmosphere to which we compare has a 3x solar deep mixing ratio of ammonia (we use 1.352x10(exp -4) for the solar mixing ratio of ammonia vapor relative to H2; see Atreya, 2010) and is fully saturated above its cloud base. The maps are comprised of residual brightness temperatures-observed brightness temperature minus the model brightness temperature of the saturated atmosphere.

  20. Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

    Science.gov (United States)

    Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

    2017-12-01

    Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

  1. Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

    Science.gov (United States)

    Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

    2017-09-01

    Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

  2. Synthesis of Cobalt Oxides Thin Films Fractal Structures by Laser Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    P. Haniam

    2014-01-01

    Full Text Available Thin films of cobalt oxides (CoO and Co3O4 fractal structures have been synthesized by using laser chemical vapor deposition at room temperature and atmospheric pressure. Various factors which affect the density and crystallization of cobalt oxides fractal shapes have been examined. We show that the fractal structures can be described by diffusion-limited aggregation model and discuss a new possibility to control the fractal structures.

  3. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

    OpenAIRE

    Wu, Angjian; Li, Xiaodong; Yang, Jian; Du, Changming; Shen, Wangjun; Yan, Jianhua

    2017-01-01

    Vertical graphene (VG) sheets were single-step synthesized via inductively coupled plasma (ICP)-enhanced chemical vapor deposition (PECVD) using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H2, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper tem...

  4. Metal-Organic Covalent Network Chemical Vapor Deposition for Gas Separation.

    Science.gov (United States)

    Boscher, Nicolas D; Wang, Minghui; Perrotta, Alberto; Heinze, Katja; Creatore, Mariadriana; Gleason, Karen K

    2016-09-01

    The chemical vapor deposition (CVD) polymerization of metalloporphyrin building units is demonstrated to provide an easily up-scalable one-step method toward the deposition of a new class of dense and defect-free metal-organic covalent network (MOCN) layers. The resulting hyper-thin and flexible MOCN layers exhibit outstanding gas-separation performances for multiple gas pairs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V. [Boston Univ., MA (United States)

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  6. Proposed Occupational Exposure Limits for Non-Carcinogenic Hanford Waste Tank Vapor Chemicals

    Energy Technology Data Exchange (ETDEWEB)

    Poet, Torka S.; Timchalk, Chuck

    2006-03-24

    A large number of volatile chemicals have been identified in the headspaces of tanks used to store mixed chemical and radioactive waste at the U.S. Department of Energy (DOE) Hanford Site, and there is concern that vapor releases from the tanks may be hazardous to workers. Contractually established occupational exposure limits (OELs) established by the Occupational Safety and Health Administration (OSHA) and American Conference of Governmental Industrial Hygienists (ACGIH) do not exist for all chemicals of interest. To address the need for worker exposure guidelines for those chemicals that lack OSHA or ACGIH OELs, a procedure for assigning Acceptable Occupational Exposure Limits (AOELs) for Hanford Site tank farm workers has been developed and applied to a selected group of 57 headspace chemicals.

  7. Rapid and highly efficient growth of graphene on copper by chemical vapor deposition of ethanol

    Energy Technology Data Exchange (ETDEWEB)

    Lisi, Nicola, E-mail: nicola.lisi@enea.it [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Buonocore, Francesco; Dikonimos, Theodoros; Leoni, Enrico [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy); Faggio, Giuliana; Messina, Giacomo [Dipartimento di Ingegneria dell' Informazione, delle Infrastrutture e dell' Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria (Italy); Morandi, Vittorio; Ortolani, Luca [CNR-IMM Bologna, Via Gobetti 101, 40129 Bologna (Italy); Capasso, Andrea [ENEA, Materials Technology Unit, Surface Technology Laboratory, Casaccia Research Centre, Via Anguillarese 301, 00123 Rome (Italy)

    2014-11-28

    The growth of graphene by chemical vapor deposition on metal foils is a promising technique to deliver large-area films with high electron mobility. Nowadays, the chemical vapor deposition of hydrocarbons on copper is the most investigated synthesis method, although many other carbon precursors and metal substrates are used too. Among these, ethanol is a safe and inexpensive precursor that seems to offer favorable synthesis kinetics. We explored the growth of graphene on copper from ethanol, focusing on processes of short duration (up to one min). We investigated the produced films by electron microscopy, Raman and X-ray photoemission spectroscopy. A graphene film with high crystalline quality was found to cover the entire copper catalyst substrate in just 20 s, making ethanol appear as a more efficient carbon feedstock than methane and other commonly used precursors. - Highlights: • Graphene films were grown by fast chemical vapor deposition of ethanol on copper. • High-temperature/short-time growth produced highly crystalline graphene. • The copper substrate was entirely covered by a graphene film in just 20 s. • Addition of H{sub 2} had a negligible effect on the crystalline quality.

  8. CHANGES IN THE CHEMICAL STRUCTURE OF THERMALLY TREATED WOOD

    OpenAIRE

    Birol Uner; Gokhan Gunduz; Ibrahim Tumen; Deniz Aydemir; Hakan Cetin

    2010-01-01

    Changes in the chemical structure of hornbeam and uludag fir woods during thermal treatment were investigated at three temperatures (170, 190, and 210 oC) and three durations (4, 8, and 12 hours). After thermal treatment, the extents of degradation in the chemical structure of the samples were determined, and the effects on the chemical composition of hornbeam wood and uludag fir wood were investigated. The data obtained were analyzed using variance analysis, and Tukey’s test was used to dete...

  9. Energy recovery from waste glycerol by utilizing thermal water vapor plasma.

    Science.gov (United States)

    Tamošiūnas, Andrius; Valatkevičius, Pranas; Gimžauskaitė, Dovilė; Jeguirim, Mejdi; Mėčius, Vladas; Aikas, Mindaugas

    2017-04-01

    Glycerol, considered as a waste feedstock resulting from biodiesel production, has received much attention in recent years due to its properties, which offer to recover energy. The aim of this study was to investigate the use of a thermal water vapor plasma for waste (crude) glycerol conversion to synthesis gas, or syngas (H2 + CO). In parallel of crude glycerol, a pure glycerol (99.5%) was used as a reference material in order to compare the concentrations of the formed product gas. A direct current (DC) arc plasma torch stabilized by a mixture of argon/water vapor was utilized for the effective glycerol conversion to hydrogen-rich synthesis gas. It was found that after waste glycerol treatment, the main reaction products were gases with corresponding concentrations of H2 50.7%, CO 23.53%, CO2 11.45%, and CH4 3.82%, and traces of C2H2 and C2H6, which concentrations were below 0.5%. The comparable concentrations of the formed gas products were obtained after pure glycerol conversion-H2 46.4%, CO 26.25%, CO2 11.3%, and CH4 4.7%. The use of thermal water vapor plasma producing synthesis gas is an effective method to recover energy from both crude and pure glycerol. The performance of the glycerol conversion system was defined in terms of the produced gas yield, the carbon conversion efficiency, the cold gas efficiency, and the specific energy requirements.

  10. Controlled assembly of organic whispering-gallery-mode microlasers as highly sensitive chemical vapor sensors.

    Science.gov (United States)

    Gao, Miaomiao; Wei, Cong; Lin, Xianqing; Liu, Yuan; Hu, Fengqin; Zhao, Yong Sheng

    2017-03-09

    We demonstrate the fabrication of organic high Q active whispering-gallery-mode (WGM) resonators from π-conjugated polymer by a controlled emulsion-solvent-evaporation method, which can simultaneously provide optical gain and act as an effective resonant cavity. By measuring the shift of their lasing modes on exposure to organic vapor, we successfully monitored the slight concentration variation in the chemical gas. These microlaser sensors demonstrated high detection sensitivity and good signal repeatability under continuous chemical gas treatments. The results offer an effective strategy to design miniaturized optical sensors.

  11. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  12. Effects of water vapor absorption on the physical and chemical stability of amorphous sodium indomethacin.

    Science.gov (United States)

    Tong, Ping; Zografi, George

    2004-03-12

    This study reports on the effects that water absorbed into amorphous sodium indomethacin (NaIMC) can have on simultaneous tendencies to crystallize to its trihydrate form and to undergo base-catalyzed hydrolysis because of the plasticizing effects of water on molecular mobility. Measurement of water vapor absorption at 30 degrees C and powder x-ray diffraction patterns as a function of relative humidity (RH) reveal that upon exposure to 21% RH, NaIMC does not crystallize over a 2-month period. Measurements of the glass transition temperature as a function of such exposure reveals a change in T(g) from 121 degrees C, dry, to 53 degrees C at 21% RH, such that T(g) at 21% RH is approximately 13 degrees C above the highest storage temperature of 40 degrees C used in the study. At 56% RH and higher, however, crystallization to the trihydrate occurs rapidly; although over the 2-month period, crystallization was never complete. Assessment of chemical degradation by high-performance liquid chromatography analysis revealed significant instability at 21% RH; whereas at higher RH, the extent of chemical degradation was reduced, reflecting the greater crystallization to the more chemically stable crystalline form. It is concluded that when amorphous forms of salts occur in solid dosage forms, the simultaneous effects of enhanced water vapor sorption on crystallization and chemical degradation must be considered, particularly when assessing solid-state chemical degradation at higher temperatures and RH (eg, 40 degrees C 75% RH).

  13. Predicting the visibility of a chemical vapor plume using schlieren optics

    Science.gov (United States)

    Bigger, Rory; Settles, Gary

    2008-11-01

    Chemicals plumes from a freely-evaporating liquid surface and from the exit of a circular pipe are considered. For the freely-evaporating case, the visibility of fourteen chemicals was tested in two schlieren optical systems. One system was a modest bench-top system and the other was a lard system of extraordinary sensitivity. Plume visibility was found to be a function of the vapor pressure and vapor refractive index. An empirical fit to the plume-visibility data, compared with the sensitivities of these systems (measured using a standard-lens method), suggests guidelines for predicting the visibility of plumes of other chemicals using other schlieren equipment. For the circular opening case, plume visibility of the same chemicals was found to be a function of plume geometry and refractive index. The peak light-ray deflections (also measured with a standard lens) caused by plumes of two different sizes were found to scale based on plume geometry. This scaling information and plume refractive index can be used to predict plume visibility for arbitrary chemicals in arbitrary systems, if the system sensitivity is known. One application of this work lies in the optical detection of plumes emitted by contraband material.

  14. Efficient, high rep rate, large-bore kinetically enhanced copper vapor laser with low (thermal assembly.

    Science.gov (United States)

    Singh, Bijendra; Subramaniam, V V; Daultabad, S R; Chakraborty, Ashim

    2009-10-01

    Large-bore kinetically enhanced copper vapor laser (CVL) based on new thermal assembly consisting of different density zones of insulation material (alumina fiber) around the discharge tube is demonstrated for the first time with efficiency eta > or = 1% at extremely low specific input power (SIP) of insulation material, efficiency of approximately 1.2% was achieved at lowest SIP of approximately 0.75 kW/l. Net reduction in the input power of approximately 1 kW was observed on using this thermal assembly as compared to nonprofiled thermal assembly. These results show significant improvement (25%-30%) at low input requirements of the laser on using new thermal assembly around the discharge tube with overall electro-optical efficiency eta > or = 1%. Maximum laser power achieved from the laser was approximately 78 W at approximately 9.8 kHz rep rate with efficiency of approximately 1.4%. This large-bore CVL is also capable of operating efficiently (eta approximately 1%) at high rep rate of -17 kHz with maximum laser power of approximately 50 W. Performance of the laser under various operating conditions is also presented in this short paper.

  15. Synthesis and characterization of diamond microcrystals and nanorods deposited by hot cathode direct current plasma chemical vapor deposition method

    NARCIS (Netherlands)

    Zeng, L.; Peng, H.; Wang, W.; Chen, Y.; Lei, D.; Qi, W.; Liang, J.; Zhao, J.; Kong, X.; Zhang, H.

    2008-01-01

    (111) diamond microcrystals and (100) diamond microcrystals and nanorods were synthesized on Si substrate by hot cathode direct current plasma chemical vapor deposition method. The morphology, structure, and optical properties of the diamond films were characterized by scanning electron microscopy,

  16. Study of Rydberg blockade mediated optical non-linearity in thermal vapor using optical heterodyne detection technique

    CERN Document Server

    Bhowmick, Arup; Mohapatra, Ashok K

    2016-01-01

    We demonstrate the phenomenon of blockade in two-photon excitations to the Rydberg state in thermal vapor. A technique based on optical heterodyne is used to measure the dispersion of a probe beam far off resonant to the D2 line of rubidium in the presence of a strong laser beam that couples to the Rydberg state via two-photon resonance. Density dependent suppression of the dispersion peak is observed while coupling to the Rydberg state with principal quantum number, n = 60. The experimental observation is explained using the phenomenon of Rydberg blockade. The blockade radius is measured to be about 2.2 {\\mu}m which is consistent with the scaling due to the Doppler width of 2-photon resonance in thermal vapor. Our result promises the realization of single photon source and strong single photon non-linearity based on Rydberg blockade in thermal vapor.

  17. Synthesis, mechanical, thermal and chemical properties of ...

    Indian Academy of Sciences (India)

    Cardanol, an excellent monomer for polymer production, has been isolated from CNSL and allowed to react with formaldehyde in a particular mole ratio in the presence of glutaric acid catalyst to give ... Differential thermal analysis (DTA) and thermo-gravimetric analysis (TGA) were undertaken for thermal characterization.

  18. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate.

    Science.gov (United States)

    Kim, Hyungki; Song, Intek; Park, Chibeom; Son, Minhyeok; Hong, Misun; Kim, Youngwook; Kim, Jun Sung; Shin, Hyun-Joon; Baik, Jaeyoon; Choi, Hee Cheul

    2013-08-27

    We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

  19. Sequential microcontroller-based control for a chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    Edgar Serrano Pérez

    2017-12-01

    Full Text Available A cost-effective direct liquid injection system is developed for a chemical vapor deposition process using a microcontroller. The precursor gas phase is controlled by the precise sequential injection of a liquid precursor solution to a vaporizing chamber prior deposition. The electronic control system allows the human–machine interface through a LCD display and a keypad matrix. The core of the electronic system is based on an electro mechanical injector operated in time and frequency as a sequential control system by a popular PIC16F877A chip. The software has been developed in the BASIC language and it can be easily modified through an ICSP programmer for different sequential automatized routines. The injection calibration test has proven the linearity of the injection control system for different operation parameters. The results reported the sequential injection MOCVD deposition of alumina thin film.

  20. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

    2014-09-23

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  1. Chemical vapor deposition of carbon nanotubes: a review on growth mechanism and mass production.

    Science.gov (United States)

    Kumar, Mukul; Ando, Yoshinori

    2010-06-01

    This review article deals with the growth mechanism and mass production of carbon nanotubes (CNTs) by chemical vapor deposition (CVD). Different aspects of CNT synthesis and growth mechanism are reviewed in the light of latest progresses and understandings in the field. Materials aspects such as the roles of hydrocarbon, catalyst and catalyst support are discussed. Many new catalysts and new carbon sources are described. Growth-control aspects such as the effects of temperature, vapor pressure and catalyst concentration on CNT diameter distribution and single- or multi-wall formation are explained. Latest reports of metal-catalyst-free CNT growth are considered. The mass-production aspect is discussed from the perspective of a sustainable CNT technology. Existing problems and challenges of the process are addressed with future directions.

  2. Reactive Chemical Vapor Deposition Method as New Approach for Obtaining Electroluminescent Thin Film Materials

    Directory of Open Access Journals (Sweden)

    Valentina V. Utochnikova

    2012-01-01

    Full Text Available The new reactive chemical vapor deposition (RCVD method has been proposed for thin film deposition of luminescent nonvolatile lanthanide aromatic carboxylates. This method is based on metathesis reaction between the vapors of volatile lanthanide dipivaloylmethanate (Ln(dpm3 and carboxylic acid (HCarb orH2Carb′ and was successfully used in case of HCarb. Advantages of the method were demonstrated on example of terbium benzoate (Tb(bz3 and o-phenoxybenzoate thin films, and Tb(bz3 thin films were successfully examined in the OLED with the following structure glass/ITO/PEDOT:PSS/TPD/Tb(bz3/Ca/Al. Electroluminescence spectra of Tb(bz3 showed only typical luminescent bands, originated from transitions of the terbium ion. Method peculiarities for deposition of compounds of dibasic acids H2Carb′ are established on example of terbium and europium terephtalates and europium 2,6-naphtalenedicarboxylate.

  3. Facile synthesis of graphene on single mode fiber via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, C. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Man, B.Y., E-mail: byman@sdnu.edu.cn [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Jiang, S.Z. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); State Key Lab of Crystal Materials Shandong University, Jinan 250100 (China); Yang, C.; Liu, M.; Chen, C.S.; Xu, S.C. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China); Feng, D.J. [School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Bi, D.; Liu, F.Y.; Qiu, H.W. [College of Physics and Electronics, Shandong Normal University, Jinan 250014 (China)

    2014-07-01

    Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H{sub 2} and Ar before the growth process plays a crucial role for the direct deposition of the graphene film and the layers of the graphene can be controlled by the growth time. With a large gas flow, Cu atoms are carried off with the gas flow and hard to deposit on the surface of the single mode fiber before the growth process. Consequently, uniform graphene film is obtained in this case. On the contrary, with a lower one, Cu atoms is facile to deposit on the surface of the single mode fiber and form nanodots acting as active catalytic sites for the growth of carbon nanotubes. This method presents us a promising transfer-free technique for fabrication of the photonic applications.

  4. Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

    Science.gov (United States)

    Grigorian, Leonid [Raymond, OH; Hornyak, Louis [Evergreen, CO; Dillon, Anne C [Boulder, CO; Heben, Michael J [Denver, CO

    2008-10-07

    The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

  5. Chemically and Thermally Stable High Energy Density Silicone Composites Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Thermal energy storage systems with 300 ? 1000 kJ/kg energy density through either phase changes or chemical heat absorption are sought by NASA. This proposed effort...

  6. Physical vapor deposited films of a perylene derivative: supramolecular arrangement and thermal stability

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, Jose Diego; Alessio, Priscila; Silva, Matheus Rodrigues Medeiros; Aroca, Ricardo Flavio; Souza, Agda Eunice de; Constantino, Carlos Jose Leopoldo, E-mail: case@fct.unesp.br [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), Presidente Prudente, SP (Brazil). Dept. de Fisica

    2017-07-15

    The analysis of supramolecular arrangement is essential to understand the role of this key factor on the optical and electrical properties of organic thin films. In this work, thin solid films of bis(phenethylimido) perylene (PhPTCD) fabricated using physical vapor deposition (PVD) technique (thermal evaporation), deposited simultaneously onto different substrates (Ag mirror, Ge, and quartz plates) contingent on the characterization technique. The main objective is to study the PhPTCD supramolecular arrangement and the thermal stability of this arrangement in PVD films. The ultraviolet-visible absorption reveals a controlled growth of the PVD films, and the micro-Raman scattering data show that the PhPTCD molecule is not thermally degraded in the conditions of these experiments. The microscopy also shows a homogeneous morphological surface of the PVD film at macro and micro scales, with molecular aggregates at nanoscale. Besides, the PVD film roughness does not follow substrate roughness. The X-ray diffraction indicates a crystalline structure for PhPTCD powder and an amorphous form for PhPTCD PVD film. The infrared absorption spectroscopy points to a preferential flat-on organization of the molecules in the PVD films. In addition, the annealing process (200 deg C for 20 minutes) does not affect the supramolecular arrangement of the PhPTCD PVD films. (author)

  7. Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

    Science.gov (United States)

    Doi, Takuma; Takeuchi, Wakana; Jin, Yong; Kokubun, Hiroshi; Yasuhara, Shigeo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

  8. Kinetic vaporization of heavy metals during fluidized bed thermal treatment of municipal solid waste.

    Science.gov (United States)

    Yu, Jie; Sun, Lushi; Xiang, Jun; Hu, Song; Su, Sheng

    2013-02-01

    Heavy metals volatilization during thermal treatment of model solid waste was theoretically and experimentally investigated in a fluidized bed reactor. Lead, cadmium, zinc and copper, the most four conventional heavy metals were investigated. Particle temperature model and metal diffusion model were established to simulate the volatilization of CdCl(2) evaporation and investigate the possible influencing factors. The diffusion coefficient, porosity and particle size had significant effects on metal volatilization. The higher diffusion coefficient and porosity resulted in the higher metal evaporation. The influence of redox conditions, HCl, water and mineral matrice were also investigated experimentally. The metal volatilization can be promoted by the injection of HCl, while oxygen played a negative role. The diffusion process of heavy metals within particles also had a significant influence on kinetics of their vaporization. The interaction between heavy metals and mineral matter can decrease metal evaporation amount by forming stable metallic species. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Chemical, thermal and mechanical stabilities of metal-organic frameworks

    Science.gov (United States)

    Howarth, Ashlee J.; Liu, Yangyang; Li, Peng; Li, Zhanyong; Wang, Timothy C.; Hupp, Joseph T.; Farha, Omar K.

    2016-03-01

    The construction of thousands of well-defined, porous, metal-organic framework (MOF) structures, spanning a broad range of topologies and an even broader range of pore sizes and chemical functionalities, has fuelled the exploration of many applications. Accompanying this applied focus has been a recognition of the need to engender MOFs with mechanical, thermal and/or chemical stability. Chemical stability in acidic, basic and neutral aqueous solutions is important. Advances over recent years have made it possible to design MOFs that possess different combinations of mechanical, thermal and chemical stability. Here, we review these advances and the associated design principles and synthesis strategies. We focus on how these advances may render MOFs effective as heterogeneous catalysts, both in chemically harsh condensed phases and in thermally challenging conditions relevant to gas-phase reactions. Finally, we briefly discuss future directions of study for the production of highly stable MOFs.

  10. Chemical Species in the Vapor Phase of Hanford Double-Shell Tanks: Potential Impacts on Waste Tank Corrosion Processes

    Energy Technology Data Exchange (ETDEWEB)

    Felmy, Andrew R.; Qafoku, Odeta; Arey, Bruce W.; Boomer, Kayle D.

    2010-09-22

    The presence of corrosive and inhibiting chemicals on the tank walls in the vapor space, arising from the waste supernatant, dictate the type and degree of corrosion that occurs there. An understanding of how waste chemicals are transported to the walls and the affect on vapor species from changing supernatant chemistry (e.g., pH, etc.), are basic to the evaluation of risks and impacts of waste changes on vapor space corrosion (VSC). In order to address these issues the expert panel workshop on double-shell tank (DST) vapor space corrosion testing (RPP-RPT-31129) participants made several recommendations on the future data and modeling needs in the area of DST corrosion. In particular, the drying of vapor phase condensates or supernatants can form salt or other deposits at the carbon steel interface resulting in a chemical composition at the near surface substantially different from that observed directly in the condensates or the supernatants. As a result, over the past three years chemical modeling and experimental studies have been performed on DST supernatants and condensates to predict the changes in chemical composition that might occur as condensates or supernatants equilibrate with the vapor space species and dry at the carbon steel surface. The experimental studies included research on both the chemical changes that occurred as the supernatants dried as well as research on how these chemical changes impact the corrosion of tank steels. The chemical modeling and associated experimental studies were performed at the Pacific Northwest National Laboratory (PNNL) and the research on tank steel corrosion at the Savannah River National Laboratory (SRNL). This report presents a summary of the research conducted at PNNL with special emphasis on the most recent studies conducted in FY10. An overall summary of the project results as well as their broader implications for vapor space corrosion of the DST’s is given at the end of this report.

  11. Geochemistry of summit fumarole vapors and flanking thermal/mineral waters at Popocatepetl Volcano, Mexico

    Energy Technology Data Exchange (ETDEWEB)

    Werner, C.; Goff, F. [Los Alamos National Lab., NM (United States); Janik, C.J. [Geological Survey, Menlo Park, CA (United States)] [and others

    1997-06-01

    Popocatepetl Volcano is potentially devastating to populations living in the greater Mexico City area. Systematic monitoring of fumarole gases and flanking thermal/mineral springs began in early 1994 after increased fumarolic and seismic activity were noticed in 1991. These investigations had two major objectives: (1) to determine if changes in magmatic conditions beneath Popocatepetl might be reflected by chemical changes in fumarolic discharges and (2) to determine if thermal/mineral spring waters in the vicinity of Popocatepetl are geochemically related to or influences by the magmatic system. This report summarizes results from these two discrete studies.

  12. Decomposition Characteristics of Toluene Vapor Using Titanium Dioxide Photocatalyst and Zeolite Thermally Sprayed on an Aluminum Fiber Filter.

    Science.gov (United States)

    Hori, Hajime; Hinoue, Mitsuo; Ishimatsu, Sumiyo; Fueta, Yukiko; Ishidao, Toru; Takabatake, Kaori; Yakiyama, Natsumi; Yamamoto, Kiyoshi

    Decomposition characteristics of toluene vapor by titanium dioxide photocatalyst and zeolite that are prepared by thermal spraying on an aluminum fiber filter (photocatalyst filter) were investigated. Toluene vapor was injected into a small chamber made of stainless steel, and an air cleaner equipped with the photocatalyst filter was operated. The vapor concentration in the chamber decreased exponentially. The decreasing rate of toluene vapor in the chamber depended on the initial toluene concentration, and the higher the initial vapor concentration was, the lower the decreasing rate was obtained. The decreasing rate was constant during each decomposition experiment, although the concentration decreased with time. To investigate the effect of zeolite on the reduction of the vapor concentration, we compared the decreasing rates of toluene vapor by photocatalyst filters with and without zeolite.The decreasing rate of toluene concentration using the filter without zeolite was larger than that with zeolite. The reason for this would be that photocatalyst decomposed toluene not only in air but also adsorbed in zeolite.

  13. Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

    Energy Technology Data Exchange (ETDEWEB)

    King, Donald B. (Albuquerque, NM); Sadwick, Laurence P. (Salt Lake City, UT); Wernsman, Bernard R. (Clairton, PA)

    2002-06-25

    Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

  14. Time variant layer control in atmospheric pressure chemical vapor deposition based growth of graphene

    KAUST Repository

    Qaisi, Ramy M.

    2013-04-01

    Graphene is a semi-metallic, transparent, atomic crystal structure material which is promising for its high mobility, strength and transparency - potentially applicable for radio frequency (RF) circuitry and energy harvesting and storage applications. Uniform (same number of layers), continuous (not torn or discontinuous), large area (100 mm to 200 mm wafer scale), low-cost, reliable growth are the first hand challenges for its commercialization prospect. We show a time variant uniform (layer control) growth of bi- to multi-layer graphene using atmospheric chemical vapor deposition system. We use Raman spectroscopy for physical characterization supported by electrical property analysis. © 2013 IEEE.

  15. Influence of alcohol on grain growth of tin oxide in chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Matsui, Yuji [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan)]. E-mail: yuuji-matsui@agc.co.jp; Mitsuhashi, Michio [New Products Development Center, Technology Development Division, Japan/Asia Pacific General Division Automotive Glass Company, Asahi Glass Co. Ltd., 426-1 Sumida, Aikawa-machi, Aiko-gun, Kanagawa 243-0301 (Japan); Yamamoto, Yuichi [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan); Higashi, Seiji [Research Center, Asahi Glass Co. Ltd., 1150 Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa 221-8755 (Japan)

    2007-01-22

    Morphologies of tin oxide micro-grains in the early stage of film growth were analyzed for films deposited by chemical vapor deposition using tin chloride as a source material. Atomic force microscopy observations revealed increased micro-grain density and decreased size by adding methanol into the reaction system, but X-ray photoelectron spectroscopy analyses suggested that the total deposited volume was unchanged. The relative amount of chlorine contamination at the bottom of alcohol-added films increased in the order of isopropyl alcohol < ethanol < methanol. A model of chlorine desorption through reaction with alcohol, which occurred in the early stage of film growth, can explain the results.

  16. Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition

    OpenAIRE

    Lenski, Daniel R.; Fuhrer, Michael S.

    2010-01-01

    We synthesize large-area graphene via atmospheric-pressure (AP) chemical vapor deposition (CVD) on copper, and transfer to SiO2 wafers. In contrast to low-pressure (LP) CVD on copper, optical contrast and atomic force microscopy measurements show AP-CVD graphene contains significant multi-layer areas. Raman spectroscopy always shows a single Lorentzian 2D peak, however systematic differences are observed in the 2D peak energy, width, and intensity for single- and multi-layer regions. We concl...

  17. Porous tungsten prepared by atmospheric-pressure chemical vapor deposition with WF6 and its characterization

    Science.gov (United States)

    Li, Ying; Yu, Xiaodong; Tan, Chengwen; Wang, Fuchi; Ma, Honglei; Yue, Jintao

    2017-05-01

    Porous tungsten (W) is used in aeronautic and aerospace engineering, power electronics field and metallurgical industry. In this study, porous W with 98wt% W was prepared on a carbon foam substrate by atmospheric-pressure chemical vapor deposition (CVD) with tungsten fluoride (WF6) as the precursor. The porous W with 78.1346% porosity displayed a pure α-W phase and the uniform surface. The mode pore diameter of porous W is 208.0 µm. In a compression test, the fracture strength of porous W is 20.3 MPa.

  18. Chemical Vapor Synthesis of Titanium Aluminides by Reaction of Aluminum Subchloride and Titanium Tetrachloride

    Science.gov (United States)

    Zakirov, Roman A.; Parfenov, Oleg G.; Solovyov, Leonid A.

    2017-11-01

    A new process for developing titanium aluminides (TiAls) using chemical vapor synthesis was investigated in a laboratory experiment. Aluminum subchloride (AlCl) was used as the reducing agent in the reaction with TiCl4 and the source of aluminum for Ti-Al alloy. Two types of products, with large crystals and fine particles, were fabricated. The large crystals were determined to be TiAl, with small amounts of Ti and Ti3Al phases. The composition of fine particles, on the other hand, varied in wide range.

  19. Transmission electron microscopy studies of YBCO coated conductor deposited using multiple-stage chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, H. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan)]. E-mail: hisasaki@jfcc.or.jp; Kato, T. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Sasaki, Y. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Hirayama, T. [Japan Fine Ceramics Center, Material Research and Development Laboratory, 2-4-1, Mutsuno, Atsuta-ku, Nagoya, Aichi 456-8587 (Japan); Kashima, N. [Electric Power Research and Development Center, Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya, Aichi 459-8522 (Japan); Nagaya, S. [Electric Power Research and Development Center, Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya, Aichi 459-8522 (Japan); Izumi, T. [Superconductivity Research Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Shiohara, Y. [Superconductivity Research Center, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

    2005-10-01

    A YBCO film was deposited on Hastelloy tape with highly oriented CeO{sub 2}/Gd{sub 2}Zr{sub 2}O{sub 7} multilayer using multiple-stage chemical vapor deposition. The microstructures of the YBCO coated conductor were examined in detail using transmission electron microscopy. Analysis indicated a YBCO film about 1 {mu}m thick was deposited and consisted mainly of c-axis oriented grains. However, a-axis oriented grains were also observed in the YBCO film, and these a-axis oriented grains grew larger with increasing thickness of the YBCO film.

  20. ZnO nanowall network grown by chemical vapor deposition technique

    Science.gov (United States)

    Mukherjee, Amrita; Dhar, Subhabrata

    2015-06-01

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  1. ZnO nanowall network grown by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-06-24

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  2. Fabrication of GaAs-Mo-Si structures by metalorganic chemical vapor deposition and laser annealing

    Science.gov (United States)

    Okakmoto, K.; Imai, T.

    1983-06-01

    After depositing undoped polycrystalline GaAs layers on Mo layers by means of metal-organic chemical vapor deposition, the samples were immersed in SnCl2-dissolved methanol in order to undergo annealing through irradiation by a Q-switched ruby laser. Recrystallization and doping of the GaAs layers was carried out succesfully, and Schottky characteristics were observed between the top GaAs layer and the Mo layer underneath. The barrier height was measured to be 0.53 eV.

  3. Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

    Science.gov (United States)

    Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

    1974-01-01

    Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

  4. Fabrication and characterization of a planar gradient-index, plasma-enhanced chemical vapor deposition lens.

    Science.gov (United States)

    Beltrami, D R; Love, J D; Durandet, A; Samo, A; Cogswell, C J

    1997-10-01

    A thin, one-dimensional, gradient-index slab lens with a parabolic profile was designed and fabricated in fluorine-doped silica by use of plasma-enhanced chemical vapor deposition in a Helicon plasma reactor. The refractive-index profile of the fabricated lens was determined by the application of an inversion technique to the values of modal effective index measured with a prism coupler. The periodic refocusing property of the lens and the independence of the wavelength were measured with the fluorescence of a specially doped, thin polymer layer spin-coated onto the surface of the lens.

  5. Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

    OpenAIRE

    Masumoto, H.; Hirai, T.

    1995-01-01

    Bismuth titanate (Bi4Ti3O12 : BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi2O3 was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H7O)4] as a CVD source. The composition of films was controlled by changing RF power (PRF) of Bi2O3 target and Ti source temperature (TTi). The stoichiometric BIT film was prepared under the condition of PRF=500W, TTi=6...

  6. Remote microwave plasma enhanced chemical vapor deposition (RMPECVD) of silica and alumina films

    Energy Technology Data Exchange (ETDEWEB)

    Desmaison, J.; Hidalgo, H.; Tristant, P.; Naudin, F.; Merle, D. [Limoges Univ. (France). Lab. de Sciences des Procedes Ceramiques et Traitements de Surface

    2002-07-01

    Alumina or silica are attractive as insulation and protective layers for sensitive substrates. Oxides are deposited by remote microwave plasma enhanced chemical vapor deposition (RMPECVD) using an oxygen plasma and a mixture of precursor gas silane or trimethylaluminum (TMA) diluted in argon, respectively for silica and alumina, injected in the afterglow. This technique allows to deposit films of SiO{sub 2} and Al{sub 2}O{sub 3} with satisfactory characteristics (density, etch rate, stoichiometry) and high deposition rate. The comparison of the best deposition conditions reveals that in case of alumina higher temperatures and lower pressures are needed. (orig.)

  7. MgB2 ultrathin films fabricated by hybrid physical chemical vapor deposition and ion milling

    Directory of Open Access Journals (Sweden)

    Narendra Acharya

    2016-08-01

    Full Text Available In this letter, we report on the structural and transport measurements of ultrathin MgB2 films grown by hybrid physical-chemical vapor deposition followed by low incident angle Ar ion milling. The ultrathin films as thin as 1.8 nm, or 6 unit cells, exhibit excellent superconducting properties such as high critical temperature (Tc and high critical current density (Jc. The results show the great potential of these ultrathin films for superconducting devices and present a possibility to explore superconductivity in MgB2 at the 2D limit.

  8. Growth and characterization of Bi2Se3 crystals by chemical vapor transport

    Directory of Open Access Journals (Sweden)

    W. H. Jiao

    2012-06-01

    Full Text Available Regularly-shaped high-quality Bi2Se3 crystals were grown by a chemical vapor transport using iodine as the transport agent. In addition to exhibiting a characteristic Dirac cone for a topological insulator, the Bi2Se3 crystals show some outstanding properties including additional crystallographic surfaces, large residual resistance ratio (∼10, and high mobility (∼8000 cm2·V−1·s−1. The low-temperature resistivity abnormally increases with applying pressures up to 1.7 GPa, and no superconductivity was observed down to 0.4 K.

  9. Chemical and thermal unfolding of calreticulin

    DEFF Research Database (Denmark)

    Duus, K.; Larsen, N.; Tran, T. A. T.

    2013-01-01

    Calreticulin is a soluble endoplasmic reticulum chaperone, which has a relatively low melting point due to its remarkable structure with a relatively high content of flexible structural elements. Using far ultraviolet circular dichroism (CD) spectroscopy and a fluorescent dye binding thermal shift...... was found to obtain a molten structure in urea concentrations between 1-1.5 M urea, and to unfold/aggregate at high and low pH values. The results demonstrated that the fluorescent dye binding assay could measure the thermal stability of calreticulin in aqueous buffers with results comparable to melting...

  10. Effect of atomic noise on optical squeezing via polarization self-rotation in a thermal vapor cell

    DEFF Research Database (Denmark)

    Hsu, M.T.L.; Hetet, G.; Peng, A.

    2006-01-01

    The traversal of an elliptically polarized optical field through a thermal vapor cell can give rise to a rotation of its polarization axis. This process, known as polarization self-rotation (PSR), has been suggested as a mechanism for producing squeezed light at atomic transition wavelengths. We...

  11. Chemical sensing of copper phthalocyanine sol-gel glass through organic vapors

    Energy Technology Data Exchange (ETDEWEB)

    Ridhi, R.; Gawri, Isha; Abbas, Saeed J.; Saini, G. S. S.; Tripathi, S. K. [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (INDIA) Fax: +91-172-2783336; Tel.:+91-172-2544362 (India)

    2015-05-15

    The sensitivities of metallophthalocyanine to vapor phase electron donors has gained significance in many areas and disciplines due to their sensing properties and ease of operation. In the present study the interaction mechanism of organic vapors in Copper Phthalocyanine (CuPc) sol-gel glass has been studied. The interaction mechanism is affected by many factors like morphology, electrical or optical properties of film. CuPc sol-gel glass has been synthesized using chemical route sol-gel method. Its structural characterization was conducted using XRD and the amorphous nature of the silicate glass was observed with characteristic α polymorph phase of CuPc at around 6.64° with 13.30Å interplanar spacing. The size of the particle as determined using Debbye Scherre’s formula comes out around 15.5 nm. The presence of α phase of CuPc was confirmed using FTIR with the appearance of crystal parameter marker band at 787 cm-1. Apart from this A2u and Eu symmetry bands of CuPc have also been observed. The UV absorption spectrum of CuPc exhibits absorption peaks owing to π→ π* and n→ π* transitions. A blue shift in the prepared CuPc glass has been observed as compared to the dopant CuPc salt indicating increase of band gap. A split in B (Soret) band and Q band appears as observed with the help of Lorentzian fitting. CuPc sol gel glass has been exposed with chemical vapors of Methanol, Benzene and Bromine individually and the electrical measurements have been carried out. These measurements show the variation in conductivity and the interaction mechanism has been analyzed.

  12. Laterally Stitched Heterostructures of Transition Metal Dichalcogenide: Chemical Vapor Deposition Growth on Lithographically Patterned Area

    KAUST Repository

    Li, Henan

    2016-10-31

    Two-dimensional transition metal dichalcogenides (TMDCs) have shown great promise in electronics and optoelectronics due to their unique electrical and optical properties. Heterostructured TMDC layers such as the laterally stitched TMDCs offer the advantages of better electronic contact and easier band offset tuning. Here, we demonstrate a photoresist-free focused ion beam (FIB) method to pattern as-grown TMDC monolayers by chemical vapor deposition, where the exposed edges from FIB etching serve as the seeds for growing a second TMDC material to form desired lateral heterostructures with arbitrary layouts. The proposed lithographic and growth processes offer better controllability for fabrication of the TMDC heterostrucuture, which enables the construction of devices based on heterostructural monolayers. © 2016 American Chemical Society.

  13. Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Liu, Changran; Camacho, Joaquin; Wang, Hai

    2017-10-23

    Nano-scale titanium oxide (TiO2) is a material useful for a wide range of applications. In a previous study, we showed that TiO2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. While rutile was unexpectedly dominant in oxygen-lean synthesis conditions, anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO2 nanocrystals with controllable crystal phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  15. Development of Single Crystal Chemical Vapor Deposition Diamonds for Detector Applications

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Harris; Kass, Richard; Gan, K. K.

    2014-01-23

    With the LHC upgrades in 2013, and further LHC upgrades scheduled in 2018, most LHC experiments are planning for detector upgrades which require more radiation hard technologies than presently available. At present all LHC experiments now have some form of diamond detector. As a result Chemical Vapor Deposition (CVD) diamond has now been used extensively in beam conditions monitors as the innermost detectors in the highest radiation areas of all LHC experiments. Moreover CVD diamond is now being discussed as an alternative sensor material for tracking very close to the interaction region of the HL-LHC where the most extreme radiation conditions will exist. Our work addressed the further development of the new material, single-crystal Chemical Vapor Deposition diamond, towards reliable industrial production of large pieces and new geometries needed for detector applications. Our accomplishments include: • Developed a two U.S.companies to produce electronic grade diamond, • Worked with companies and acquired large area diamond pieces, • Performed radiation hardness tests using various proton energies: 70 MeV (Cyric, Japan), 800 MeV (Los Alamos), and 24 GeV (CERN).

  16. Process Parameters for Successful Synthesis of Carbon Nanotubes by Chemical Vapor Deposition: Implications for Chemical Mechanisms and Life-cycle Assessment

    Science.gov (United States)

    Xue, Ke

    Manufacturing of carbon nanotubes (CNTs) via chemical vapor deposition (CVD) calls for thermal treatment associated with gas-phase rearrangement and catalyst deposition to achieve high cost efficiency and limited influence on environmental impact. Taking advantage of higher degree of structure control and economical efficiency, catalytic chemical vapor deposition (CCVD) has currently become the most prevailing synthesis approach for the synthesis of large-scale pure CNTs in past years. Because the synthesis process of CNTs dominates the potential ecotoxic impacts, materials consumption, energy consumption and greenhouse gas emissions should be further limited to efficiently reduce life cycle ecotoxicity of carbon naotubes. However, efforts to reduce energy and material requirements in synthesis of CNTs by CCVD are hindered by a lack of mechanistic understanding. In this thesis, the effect of operating parameters, especially the temperature, carbon source concentration, and residence time on the synthesis were studied to improve the production efficiency in a different angle. Thus, implications on the choice of operating parameters could be provided to help the synthesis of carbon nanotubes. Here, we investigated the typical operating parameters in conditions that have yielded successful CNT production in the published academic literature of over seventy articles. The data were filtered by quality of the resultant product and deemed either "successful" or "unsuccessful" according to the authors. Furthermore, growth rate data were tabulated and used as performance metric for the process whenever possible. The data provided us an opportunity to prompt possible and common methods for practioners in the synthesis of CNTs and motivate routes to achieve energy and material minimization. The statistical analysis revealed that methane and ethylene often rely on thermal conversion process to form direct carbon precursor; further, methane and ethylene could not be the direct

  17. Initiated Chemical Vapor Deposition (iCVD) of Highly Cross-Linked Polymer Films for Advanced Lithium-Ion Battery Separators.

    Science.gov (United States)

    Yoo, Youngmin; Kim, Byung Gon; Pak, Kwanyong; Han, Sung Jae; Song, Heon-Sik; Choi, Jang Wook; Im, Sung Gap

    2015-08-26

    We report an initiated chemical vapor deposition (iCVD) process to coat polyethylene (PE) separators in Li-ion batteries with a highly cross-linked, mechanically strong polymer, namely, polyhexavinyldisiloxane (pHVDS). The highly cross-linked but ultrathin pHVDS films can only be obtained by a vapor-phase process, because the pHVDS is insoluble in most solvents and thus infeasible with conventional solution-based methods. Moreover, even after the pHVDS coating, the initial porous structure of the separator is well preserved owing to the conformal vapor-phase deposition. The coating thickness is delicately controlled by deposition time to the level that the pore size decreases to below 7% compared to the original dimension. The pHVDS-coated PE shows substantially improved thermal stability and electrolyte wettability. After incubation at 140 °C for 30 min, the pHVDS-coated PE causes only a 12% areal shrinkage (versus 90% of the pristine separator). The superior wettability results in increased electrolyte uptake and ionic conductivity, leading to significantly improved rate performance. The current approach is applicable to a wide range of porous polymeric separators that suffer from thermal shrinkage and poor electrolyte wetting.

  18. Synthesis, mechanical, thermal and chemical properties of ...

    Indian Academy of Sciences (India)

    Unknown

    Department of Chemistry, Manonmaniam Sundaranar University, Abishekapatti, Tirunelveli 627 012, India. MS received 28 August 2003; ... thanes were characterized with respect to their resistance to chemical reagents and mechanical properties such as tensile strength, ..... Recent advances (ed.) I S. Bhardwajj (New ...

  19. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  20. Jet quenching and holographic thermalization with a chemical potential

    Energy Technology Data Exchange (ETDEWEB)

    Caceres, Elena [Facultad de Ciencias, Universidad de Colima,Bernal Diaz del Castillo 340, Colima (Mexico); Theory Group, Department of Physics,University of Texas at Austin, Austin, TX 78712 (United States); Kundu, Arnab [Theory Group, Department of Physics,University of Texas at Austin, Austin, TX 78712 (United States); Yang, Di-Lun [Department of Physics, Duke University,Durham, North Carolina 27708 (United States)

    2014-03-17

    We investigate jet quenching of virtual gluons and thermalization of a strongly-coupled plasma with a non-zero chemical potential via the gauge/gravity duality. By tracking a charged shell falling in an asymptotic AdS{sub d+1} background for d=3 and d=4, which is characterized by the AdS-Reissner-Nordström-Vaidya (AdS-RN-Vaidya) geometry, we extract a thermalization time of the medium with a non-zero chemical potential. In addition, we study the falling string as the holographic dual of a virtual gluon in the AdS-RN-Vaidya spacetime. The stopping distance of the massless particle representing the tip of the falling string in such a spacetime could reveal the jet quenching of an energetic light probe traversing the medium in the presence of a chemical potential. We find that the stopping distance decreases when the chemical potential is increased in both AdS-RN and AdS-RN-Vaidya spacetimes, which correspond to the thermalized and thermalizing media respectively. Moreover, we find that the soft gluon with an energy comparable to the thermalization temperature and chemical potential in the medium travels further in the non-equilibrium plasma. The thermalization time obtained here by tracking a falling charged shell does not exhibit, generically, the same qualitative features as the one obtained studying non-local observables. This indicates that — holographically — the definition of thermalization time is observer dependent and there is no unambiguos definition.

  1. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH){sub 2}. Ba(OH){sub 2} is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO{sub 2}/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH){sub 2}. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO{sub 2}/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH){sub 2} for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and Li

  2. Growth mechanism of long aligned multiwall carbon nanotube arrays by water-assisted chemical vapor deposition.

    Science.gov (United States)

    Yun, YeoHeung; Shanov, Vesselin; Tu, Yi; Subramaniam, Srinivas; Schulz, Mark J

    2006-11-30

    Highly aligned arrays of multiwalled carbon nanotube (MWCNT) on layered Si substrates have been synthesized by chemical vapor deposition (CVD). The effect of the substrate design and the process parameters on the growth mechanism were studied. Adding water vapor to the reaction gas mixture of hydrogen and ethylene enhanced the growth which led to synthesis of longer CNT arrays with high density. Environmental scanning electron microscopy (ESEM), energy-dispersive spectroscopy (EDS), and atomic force microscopy (AFM) were used to analyze the CNT morphology and composition. Quadrupole mass spectroscopy (QMS) provided in-situ information on the gas spices within the reaction zone. On the basis of results, we verified the top growth mechanism and evaluated the reason of decline and stoppage of the CNT growth after extended period of deposition. Multilayered Si substrates with a top film of Al2O3, having appropriate roughness, provide favorable conditions to form catalyst islands with uniform distribution and size. Using water-assisted CVD process and optimized substrate design, our group succeeded to grow vertically aligned, patterned MWCNT up to 4-mm long. The arrays were of high purity and weak adhesion which allowed to be peeled off easily from the substrate.

  3. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  4. Characterization of outcomes 1 year after endoscopic thermal vapor ablation for patients with heterogeneous emphysema

    Directory of Open Access Journals (Sweden)

    Herth FJ

    2012-07-01

    Full Text Available Felix JF Herth,1 Armin Ernst,2 Kimberly M Baker,3 Jim J Egan,4 Mark H Gotfried,5 Peter Hopkins,6 Franz Stanzel,7 Arschang Valipour,8 Manfred Wagner,9 Christian Witt,10 Steven Kesten,11 Gregory Snell121Pneumology and Critical Care Medicine, Thoraxklinik Heidelberg, Heidelberg, Germany; 2St Elizabeth's Medical Center, Boston, MA, USA; 3University of Iowa, Iowa City, IA, USA; 4Advanced Lung Disease Program, Mater Misericordiae University Hospital, Dublin, Ireland; 5Pulmonary Associates, Phoenix, AZ, USA; 6Lung Transplant Unit, Prince Charles Hospital, Chermside, Australia; 7Zentrum für Pneumologie, Hemer, Germany; 8Ludwig-Boltzmann-Institute for COPD, Otto-Wagner-Hospital, Vienna, Austria; 9Klinikum Nürnberg, Nürnberg, Germany; 10Pneumology, Charité Campus-Mitte, Berlin, Germany; 11Uptake Medical Corp, Tustin, CA, USA; 12Allergy Immunology and Respiratory Medicine, The Alfred Hospital, Melbourne, AustraliaIntroduction: Endoscopic lung volume reduction has been developed as a therapeutic option for advanced emphysema. Six-month results following treatment with endoscopic thermal vapor ablation (InterVapor™; Uptake Medical, Tustin, CA were described previously, and here we report observations from the 12-month assessment.Methods: Two multicenter, international, single-arm trials of InterVapor (unilateral upper lobe treatment in patients with upper lobe predominant emphysema were conducted. Inclusion criteria: forced expiratory volume in 1 second (FEV1 15%–45% predicted, residual volume > 150%, total lung capacity > 100%, 6-minute walk distance (6MWD > 140 m, and diffusing capacity for carbon monoxide > 20% predicted. Efficacy endpoints: spirometry, body plethysmography, lung volumes by high-resolution computed tomography, St George's Respiratory Questionnaire, modified Medical Research Council dyspnea scale, and 6MWD. All adverse events were collected and independently adjudicated.Results: Forty four patients were treated at a mean (standard

  5. Vapor feed direct methanol fuel cells with passive thermal-fluids management system

    Science.gov (United States)

    Guo, Zhen; Faghri, Amir

    The present paper describes a novel technology that can be used to manage methanol and water in miniature direct methanol fuel cells (DMFCs) without the need for a complex micro-fluidics subsystem. At the core of this new technology is a unique passive fuel delivery system that allows for fuel delivery at an adjustable rate from a reservoir to the anode. Furthermore, the fuel cell is designed for both passive water management and effective carbon dioxide removal. The innovative thermal management mechanism is the key for effective operation of the fuel cell system. The vapor feed DMFC reached a power density of 16.5 mW cm -2 at current density of 60 mA cm -2. A series of fuel cell prototypes in the 0.5 W range have been successfully developed. The prototypes have demonstrated long-term stable operation, easy fuel delivery control and are scalable to larger power systems. A two-cell stack has successfully operated for 6 months with negligible degradation.

  6. Effect of wettability of a porous stainless steel on thermally induced liquid–vapor interface behavior

    Science.gov (United States)

    Oka, C.; Odagiri, K.; Nagano, H.

    2017-12-01

    Control of thermally induced liquid–vapor interface behavior at the contact surface of porous media is crucial for development of two-phase heat transfer devices such as loop heat pipes. The behavior experiences three modes with increase of heat flux, and the middle mode possesses the highest heat transfer performance. In this paper, the effect of improving wettability of the porous media is demonstrated experimentally and numerically for the first time, in particular with regard to the effect on a domain of the middle mode. Ethanol wettability of a porous stainless steel was improved via a facile method, which was a simple acid treatment. As a result, the domain of the middle mode was extended as a consequence of the wettability improvement. The mode transfers from the middle to the last one when the pressure drop in the liquid supply exceeds the capillary pressure of liquid bridges formed between the heating plate and the porous medium. Hence, the extension of the domain suggested that the capillary pressure was increased by the wettability improvement. This was verified via numerical calculation. The calculated capillary pressure was increased by 7% after improving wettability, which resulted in the extension of the domain of the middle mode.

  7. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical–chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-02-16

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20–25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical–chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg–Cu alloy layer with occasional intrusion of Mg–Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  8. Growth of magnesium diboride films on 2 inch diameter copper discs by hybrid physical-chemical vapor deposition

    Science.gov (United States)

    Withanage, Wenura K.; Xi, X. X.; Nassiri, Alireza; Lee, Namhoon; Wolak, Matthäus A.; Tan, Teng; Welander, Paul B.; Franzi, Matthew; Tantawi, Sami; Kustom, Robert L.

    2017-04-01

    Magnesium diboride (MgB2) coating is a potential candidate to replace bulk niobium (Nb) for superconducting radio frequency cavities due to the appealing superconducting properties of MgB2. MgB2 coating on copper may allow cavity operation near 20-25 K as a result of the high transition temperature (T c) of MgB2 and excellent thermal conductivity of Cu. We have grown MgB2 films on 2 inch diameter Cu discs by hybrid physical-chemical vapor deposition for radio frequency characterization. Structural and elemental analyses showed a uniform MgB2 coating on top of a Mg-Cu alloy layer with occasional intrusion of Mg-Cu alloy regions. High T c values of around 37 K and high critical current density (J c) on the order of 107 A cm-2 at zero field were observed. Radio frequency measurements at 11.4 GHz confirmed a high T c and showed a quality factor (Q 0) much higher than for Cu and close to that of Nb.

  9. Cobalt(I) Olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films.

    Science.gov (United States)

    Hamilton, Jeff A; Pugh, Thomas; Johnson, Andrew L; Kingsley, Andrew J; Richards, Stephen P

    2016-07-18

    We report the synthesis and characterization of a family of organometallic cobalt(I) metal precursors based around cyclopentadienyl and diene ligands. The molecular structures of the complexes cyclopentadienyl-cobalt(I) diolefin complexes are described, as determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis and thermal stability studies of the complexes highlighted the isoprene, dimethyl butadiene, and cyclohexadiene derivatives [(C5H5)Co(η(4)-CH2CHC(Me)CH2)] (1), [(C5H5)Co(η(4)-CH2C(Me)C(Me)CH2)] (2), and [(C5H5)Co(η(4)-C6H8)] (4) as possible cobalt metal organic chemical vapor deposition (MOCVD) precursors. Atmospheric pressure MOCVD was employed using precursor 1, to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface.

  10. Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition.

    Science.gov (United States)

    Egberts, Philip; Han, Gang Hee; Liu, Xin Z; Johnson, A T Charlie; Carpick, Robert W

    2014-05-27

    Single asperity friction experiments using atomic force microscopy (AFM) have been conducted on chemical vapor deposited (CVD) graphene grown on polycrystalline copper foils. Graphene substantially lowers the friction force experienced by the sliding asperity of a silicon AFM tip compared to the surrounding oxidized copper surface by a factor ranging from 1.5 to 7 over loads from the adhesive minimum up to 80 nN. No damage to the graphene was observed over this range, showing that friction force microscopy serves as a facile, high contrast probe for identifying the presence of graphene on Cu. Consistent with studies of epitaxially grown, thermally grown, and mechanically exfoliated graphene films, the friction force measured between the tip and these CVD-prepared films depends on the number of layers of graphene present on the surface and reduces friction in comparison to the substrate. Friction results on graphene indicate that the layer-dependent friction properties result from puckering of the graphene sheet around the sliding tip. Substantial hysteresis in the normal force dependence of friction is observed with repeated scanning without breaking contact with a graphene-covered region. Because of the hysteresis, friction measured on graphene changes with time and maximum applied force, unless the tip slides over the edge of the graphene island or contact with the surface is broken. These results also indicate that relatively weak binding forces exist between the copper foil and these CVD-grown graphene sheets.

  11. Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution

    Science.gov (United States)

    Alias, Afishah; Hazawa, Kouta; Kawashima, Nobuaki; Fukuda, Hisashi; Uesugi, Katsuhiro

    2011-01-01

    Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature (TG) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at TG = 350 °C was found to exhibit a relatively low saturation mobility (µsat). However, µsat increased from 1 to 14 cm2·V-1·s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.

  12. Rapid assessment of mid-infrared refractive index anisotropy using a prism coupler: chemical vapor deposited ZnS.

    Science.gov (United States)

    Qiao, H A; Lipschultz, Kristen A; Anheier, N C; McCloy, J S

    2012-05-01

    A state-of-the-art mid-infrared prism coupler was used to study suspected anisotropy in the refractive index of forward-looking-infrared grade chemical vapor deposited (CVD) zinc sulfide. Samples were prepared with columnar grain structure in and perpendicular to the sample plane, as well as from different depths in the CVD growth body. This study was motivated by the growing industry concern among optical design engineers, as well as developers of mid-infrared systems, over the reliability of historically accepted index data. Prior photoluminescence and x-ray diffraction measurements have suggested that refractive index may vary according to sample orientation with respect to the grain structure. Measurements were conducted to provide optical dispersion and thermal index (dn/dT) data at discrete laser wavelengths between 0.633 and 10.591 μm at two temperature set points (30 °C and 90 °C). Refractive index measurements between samples exhibited an average standard deviation comparable to the uncertainty of the prism coupler measurement (0.0004 refractive index units), suggesting that the variation in refractive index as a function of sample orientation and CVD deposition time is negligible and should have no impact on subsequent optical designs. Measured dispersion data at mid-infrared wavelengths were also found to agree well with prior published measurements.

  13. Structural, optical and electrical study of undoped GaN layers obtained by metalorganic chemical vapor deposition on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Kuoppa, Victor-Tapio, E-mail: tapio.rangel@gmail.co [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Aguilar, Cesia Guarneros [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico); Sanchez-Resendiz, Victor, E-mail: victors@sees.cinvestav.m [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07360, Mexico, Distrito Federal (Mexico)

    2011-01-31

    We investigate optical, structural and electrical properties of undoped GaN grown on sapphire. The layers were prepared in a horizontal reactor by low pressure metal organic chemical vapor deposition at temperatures of 900 {sup o}C and 950 {sup o}C on a low temperature grown (520 {sup o}C) GaN buffer layer on (0001) sapphire substrate. The growth pressure was kept at 10,132 Pa. The photoluminescence study of such layers revealed a band-to-band emission around 366 nm and a yellow band around 550 nm. The yellow band intensity decreases with increasing deposition temperature. X-ray diffraction, atomic force microscopy and scanning electron microscopy studies show the formation of hexagonal GaN layers with a thickness of around 1 {mu}m. The electrical study was performed using temperature dependent Hall measurements between 35 and 373 K. Two activation energies are obtained from the temperature dependent conductivity, one smaller than 1 meV and the other one around 20 meV. For the samples grown at 900 {sup o}C the mobilities are constant around 10 and 20 cm{sup 2} V{sup -1} s{sup -1}, while for the sample grown at 950 {sup o}C the mobility shows a thermally activated behavior with an activation energy of 2.15 meV.

  14. Catalytic Chemical Vapor Deposition of Methane to Carbon Nanotubes: Copper Promoted Effect of Ni/MgO Catalysts

    Directory of Open Access Journals (Sweden)

    Wen Yang

    2014-01-01

    Full Text Available The Ni/MgO and Ni-Cu/MgO catalysts were prepared by sol-gel method and used as the catalysts for synthesis of carbon nanotubes by thermal chemical vapor deposition. The effect of Cu on the carbon yield and structure was investigated, and the effects of calcination temperature and reaction temperature were also investigated. The catalysts and synthesized carbon materials were characterized by temperature programmed reduction (TPR, thermogravimetric analysis (TGA, and scanning electron microscopy (SEM. Results showed that the addition of Cu promoted the reduction of nickel species, subsequently improving the growth and yield of CNTs. Meanwhile, CNTs were synthesized by the Ni/MgO and Ni-Cu/MgO catalysts with various calcination temperatures and reaction temperatures, and results suggested that the obtained CNTs on Ni-Cu/MgO catalyst with the calcination temperature of 500°C and the reaction temperature of 650°C were of the greatest yield and quantity of 927%.

  15. Development of polishing methods for Chemical Vapor Deposited Silicon Carbide mirrors for synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fuchs, B.A.; Brown, N.J.

    1987-01-01

    Material properties of Chemical Vapor Deposited Silicon Carbide (CVD SiC) make it ideal for use in mirrors for synchrotron radiation experiments. We developed methods to grind and polish flat samples of CVD SiC down to measured surface roughness values as low as 1.1 Angstroms rms. We describe the processing details, including observations we made during trial runs with alternative processing recipes. We conclude that pitch polishing using progressively finer diamond abrasive, augmented with specific water based lubricants and additives, produces superior results. Using methods based on these results, a cylindrical and a toroidal mirror, each about 100 x 300mm, were respectively finished by Continental Optical and Frank Cooke, Incorporated. WYCO Interferometry shows these mirrors have surface roughness less than 5.7 Angstroms rms. These mirrors have been installed on the LLNL/UC X-ray Calibration and Standards Facility at the Stanford Synthrotron Radiation Laboratory.

  16. Current Issues and Problems in the Chemical Vapor Deposition of Diamond

    Science.gov (United States)

    Yarbrough, Walter A.; Messier, Russell

    1990-02-01

    Current issues and problems in the chemical vapor deposition (CVD) of diamond are those which relate to its characterization, its nucleation on foreign surfaces, the question of its formation in preference to the other phases of solid carbon (for example, graphite, chaoite, or lonsdaleite), why different morphologies and crystallographic orientations (textures) are seen in different experiments or with different parameters in the same experiment, and finally whether well-crystallized metastable phases can be obtained by CVD in other material systems or are only a peculiarity of carbon chemistry. Whether a given carbon coating is justly described as diamond has been such an issue, and coatings should clearly show evidence for diamond by x-ray diffraction and Raman spectroscopy before the claim of diamond is made. Experimental results have not been consistent in many cases, and much work remains to be done before an accurate assessment can be made of the technological impact of the development.

  17. Graphene-laminated architectures obtained by chemical vapor deposition: From graphene to graphite

    Science.gov (United States)

    Kitayama, Hiroki; Shimizu, Kengo; Ohba, Tomonori

    2017-11-01

    Graphene and graphite are of great interest in materials science. Using chemical vapor deposition at various CH4:H2 ratios, we synthesized materials with graphene-laminated architectures, ranging from graphene to graphite. A lower proportion of CH4 and lower synthesis temperature produced fewer graphene layers. The transparent properties changed from transparent to semi-transparent, black, and silver as the number of graphene layers was increased. The sheet electrical resistivity ranged from 106 to 0.2 Ω □-1, and the smaller resistivity was nearly equaled as the values of highly orientated pyrolytic graphite and glassy carbon. The graphene-laminated materials featured a wide range of transmittance, reflectance, and electrical conductance properties.

  18. X-ray Tomographic Study of Chemical Vapor Infiltration Processing of Ceramic Composites.

    Science.gov (United States)

    Kinney, J H; Breunig, T M; Starr, T L; Haupt, D; Nichols, M C; Stock, S R; Butts, M D; Saroyan, R A

    1993-05-07

    The fabrication of improved ceramic-matrix composites will require a better understanding of processing variables and how they control the development of the composite microstructure. Noninvasive, high-resolution methods of x-ray tomography have been used to measure the growth of silicon carbide in a woven Nicalon-fiber composite during chemical vapor infiltration. The high spatial resolution allows one to measure the densification within individual fiber tows and to follow the closure of macroscopic pores in situ. The experiments provide a direct test of a recently proposed model that describes how the surface area available for matrix deposition changes during infiltration. The measurements indicate that this surface area is independent of the fiber architecture and location within the preform and is dominated by large-scale macroporosity during the final stages of composite consolidation. The measured surface areas are in good agreement with the theoretical model.

  19. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zardo, I.; Conesa-Boj, S.; Estradé, S.; Yu, L.; Peiro, F.; Roca I Cabarrocas, P.; Morante, J. R.; Arbiol, J.; Fontcuberta I Morral, A.

    2010-07-01

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the , or growth direction. When growing on the and directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm-1, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.

  20. Carrier dynamics in InS nanowires grown via chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Othonos, Andreas [Department of Physics, Research Centre of Ultrafast Science, University of Cyprus, P.O. Box 20537, 1678 Nicosia (Cyprus); Zervos, Matthew [Department of Mechanical and Manufacturing Engineering, Nanostructured Materials and Devices Laboratory, Materials Science Group, University of Cyprus, P.O. Box 20537, 1678 Nicosia (Cyprus)

    2010-10-15

    Transient femtosecond absorption spectroscopy and time-correlating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the relaxation mechanisms in these nanostructures. Intensity dependent measurements revealed that Auger recombination plays an important role in the relaxation of photogenerated carriers at fluences larger than 0.4 x 10{sup 15} photons/cm{sup 2}. Calculations provided an estimated of the Auger recombination coefficient to be 1.1 {+-} 0.5 x 10{sup -31} cm{sup 6}/s. At the low fluence regime TCSPC PL revealed three relaxation mechanisms with time constants ranging from ps to nanosecond providing evidence of the importance of non-radiative decay channels associated with defect/trap states within the NWs. Auger recombination appears to dominate the carrier dynamics in InS NWs with increasing incident photon flux. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  1. Chemical vapor infiltration of TiB{sub 2} fibrous composites

    Energy Technology Data Exchange (ETDEWEB)

    Besmann, T.M. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    This program is designed to develop a Hall-Heroult aluminum smelting cathode with substantially improved properties. The carbon cathodes in current use require significant anode-to-cathode spacing in order to prevent shorting, causing significant electrical inefficiencies. This is due to the non-wettability of carbon by aluminum which causes instability in the cathodic aluminum pad. It is suggested that a fiber reinforced-TiB{sub 2} matrix composite would have the requisite wettability, strength, strain-to-failure, cost, and lifetime to solve this problem. The approach selected to fabricate such a cathode material is chemical vapor infiltration (CVI). This process produces high purity matrix TiB{sub 2} without damaging the relatively fragile fibers. The program is designed to evaluate potential fiber reinforcements, fabricate test specimens, and scale the process to provide demonstration components.

  2. Characterization of catalytic chemical vapor-deposited SiCN thin film coatings

    Science.gov (United States)

    Neethirajan, Suresh; Ono, Takahita; Masayoshi, Esashi

    2012-06-01

    Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using ammonia and hexamethyldisilazane gas sources using catalytic chemical vapor deposition process. Compositions of silicon, carbon and nitrogen in the SiCN films were varied by changing the flow rate of ammonia gas. The effect of deposition conditions on the structural, optical and mechanical properties of SiCN thin films was examined. X-ray photoelectron spectroscopy analysis indicated that the higher flow rate of ammonia gas results in higher nitrogen and lower carbon content in the deposited thin films. The measurement of stress as a function of substrate temperature in the SiCN film showed that the stress changes from compressive to tensile in the range of 275°C to 325°C. With these preliminary characterization tests, it is expected that SiCN nano-thin films can be used for developing sensors for harsh environment.

  3. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shukrullah, S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Mohamed, N. M., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Shaharun, M. S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia); Yasar, M., E-mail: Muhammad.yasar@ieee.org [Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia)

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  4. Carbon agent chemical vapor transport growth of Ga2O3 crystal

    Science.gov (United States)

    Jie, Su; Tong, Liu; Jingming, Liu; Jun, Yang; Guiying, Shen; Yongbiao, Bai; Zhiyuan, Dong; Youwen, Zhao

    2016-10-01

    Beta-type gallium oxide (β-Ga2O3) is a new attractive material for optoelectronic devices. Different methods had been tried to grow high quality β-Ga2O3 crystals. In this work, crystal growth of Ga2O3 has been carried out by chemical vapor transport (CVT) method in a closed quartz tube using C as transport agent and sapphire wafer as seed. The CVT mass flux has been analyzed by theoretical calculations based on equilibrium thermodynamics and 1D diffusional mass transport. The crystal growth experimental results are in agreement with the theoretical predictions. Influence factors of Ga2O3 crystal growth, such as temperature distribution, amount of C as transport agent used, have also been discussed. Structural (XRD) and optical (Raman spectroscopy, photoluminescence spectrum) properties of the CVT-Ga2O3 crystal are presented. Project supported by the National Natural Science Foundation of China (Nos. 61474104, 61504131).

  5. Large single crystals of graphene on melted copper using chemical vapor deposition.

    Science.gov (United States)

    Wu, Yimin A; Fan, Ye; Speller, Susannah; Creeth, Graham L; Sadowski, Jerzy T; He, Kuang; Robertson, Alex W; Allen, Christopher S; Warner, Jamie H

    2012-06-26

    A simple method is presented for synthesizing large single crystal graphene domains on melted copper using atmospheric pressure chemical vapor deposition (CVD). This is achieved by performing the reaction above the melting point of copper (1090 °C) and using a molybdenum or tungsten support to prevent balling of the copper from dewetting. By controlling the amount of hydrogen during growth, individual single crystal domains of monolayer graphene greater than 200 μm are produced within a continuous film. Stopping growth before a complete film is formed reveals individual hexagonal domains of graphene that are epitaxially aligned in their orientation. Angular resolved photoemission spectroscopy is used to show that the graphene grown on copper exhibits a linear dispersion relationship and no sign of doping. HRTEM and electron diffraction reveal a uniform high quality crystalline atomic structure of monolayer graphene.

  6. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper.

    Science.gov (United States)

    Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

    2015-07-01

    Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm(2) V(-1) s(-1), thus rivaling exfoliated graphene.

  7. Uniformity of large-area bilayer graphene grown by chemical vapor deposition

    Science.gov (United States)

    Sheng, Yuewen; Rong, Youmin; He, Zhengyu; Fan, Ye; Warner, Jamie H.

    2015-10-01

    Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.

  8. Effect of cooling condition on chemical vapor deposition synthesis of graphene on copper catalyst.

    Science.gov (United States)

    Choi, Dong Soo; Kim, Keun Soo; Kim, Hyeongkeun; Kim, Yena; Kim, TaeYoung; Rhy, Se-hyun; Yang, Cheol-Min; Yoon, Dae Ho; Yang, Woo Seok

    2014-11-26

    Here, we show that chemical vapor deposition growth of graphene on copper foil is strongly affected by the cooling conditions. Variation of cooling conditions such as cooling rate and hydrocarbon concentration in the cooling step has yielded graphene islands with different sizes, density of nuclei, and growth rates. The nucleation site density on Cu substrate is greatly reduced when the fast cooling condition was applied, while continuing methane flow during the cooling step also influences the nucleation and growth rate. Raman spectra indicate that the graphene synthesized under fast cooling condition and methane flow on cool-down exhibit superior quality of graphene. Further studies suggest that careful control of the cooling rate and CH4 gas flow on the cooling step yield a high quality of graphene.

  9. Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

    Directory of Open Access Journals (Sweden)

    Garima Saraswat

    2014-05-01

    Full Text Available NbN films are grown on chemical vapor deposited graphene using dc magnetron sputtering. The orientation and transition temperature of the deposited films is studied as a function of substrate temperature. A superconducting transition temperature of 14 K is obtained for highly oriented (111 films grown at substrate temperature of 150 °C, which is comparable to epitaxial films grown on MgO and sapphire substrates. These films show a considerably high upper critical field of ∼33 T. In addition, we demonstrate a process for obtaining flexible, free-standing NbN films by delaminating graphene from the substrate using a simple wet etching technique. These free-standing NbN layers can be transferred to any substrate, potentially enabling a range of novel superconducting thin-film applications.

  10. Characterization of ultra-short pulsed discharge plasma for CVD processing. [Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mizuno, Akira (Toyohashi Univ. of Technology (Japan). Dept. of Ecological Engineering); Okazaki, Ken (Tokyo Inst. of Technology (Japan). Research Center for Carbon Recycling and Utilization); Takekoshi, Takashi (Mitsubishi Kasei Co., Okayama (Japan). Mizushima Works); Tobe, Ryoki (Anelva Corp., Tokyo (Japan). Research Development Center)

    Characteristics of pulsed discharge plasma of methane-hydrogen gas mixture and Ar gas have been studied for active control of plasma chemical vapor deposition (CVD) processing. Voltage-current characteristics, time-lag of the current pulse, and the photon emission intensity profile have been investigated using high-voltage pulses of 50-1000 ns duration. In such a pulse discharge, voltages much higher than those in a dc glow discharge can be applied without any plasma nonuniformity or arcing because voltage amplitude falls to zero before glow to arc transition. A current value of more than 10[sup 3] times those in a glow discharge can be established. Very high photon emission intensity from CH radicals and H ions have been observed near the anode in a pulsed plasma. This is different in dc plasma, where the negative glow region near the cathode is the brightest.

  11. Preparation of γ-Al2O3 films by laser chemical vapor deposition

    Science.gov (United States)

    Gao, Ming; Ito, Akihiko; Goto, Takashi

    2015-06-01

    γ- and α-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce α-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced γ-Al2O3 films when used at a high total pressure. γ-Al2O3 films had a cauliflower-like structure, while the α-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted γ-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed.

  12. Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Juanjuan Liu

    2016-11-01

    Full Text Available Hexagonal boron nitrite (h-BN is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.

  13. Synthesis of Y-Tip Graphitic Nanoribbons from Alcohol Catalytic Chemical Vapor Deposition on Piezoelectric Substrate

    Directory of Open Access Journals (Sweden)

    Zainab Yunusa

    2015-01-01

    Full Text Available We report the synthesis of Graphitic Nanoribbons (GNRs using Alcohol Catalytic Chemical Vapor Deposition (ACCVD. Bulk GNR was synthesized directly on a piezoelectric substrate using one-step ACCVD. The synthesized GNRs were characterized by X-Ray Diffraction (XRD, Scanning Electron Microscope (SEM, Transmission Electron Microscope (TEM, Energy Dispersive X-Ray (EDX, Atomic Force Microscopy (AFM, and Raman spectroscopy. The characterization results showed Y-tip morphology of bulk and filamentous as-grown GNR having varying width that lies between tens and hundreds of nm and length of several microns. Based on the thickness obtained from the AFM and the analysis from the Raman spectroscopy, it was concluded that the synthesized GNRs are multiple-layered and graphitic in nature. With the direct synthesis of GNR on a piezoelectric substrate, it could have applications in the sensor industries, while the Y-tip GNR could have potentialities in semiconductor applications.

  14. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  15. Minimizing artifact formation in magnetorheological finishing of chemical vapor deposition ZnS flats

    Science.gov (United States)

    Kozhinova, Irina A.; Romanofsky, Henry J.; Maltsev, Alexander; Jacobs, Stephen D.; Kordonski, William I.; Gorodkin, Sergei R.

    2005-08-01

    The polishing performance of magnetorheological (MR) fluids prepared with a variety of magnetic and nonmagnetic ingredients was studied on four types of initial surface for chemical vapor deposition (CVD) ZnS flats from domestic and foreign sources. The results showed that it was possible to greatly improve smoothing performance of magnetorheological finishing (MRF) by altering the fluid composition, with the best results obtained for nanoalumina abrasive used with soft carbonyl iron and altered MR fluid chemistry. Surface roughness did not exceed 20 nm peak to valley and 2 nm rms after removal of 2 μm of material. The formation of orange peel and the exposure of a pebblelike structure inherent in ZnS from the CVD process were suppressed.

  16. Chemical vapor deposition polymerization the growth and properties of parylene thin films

    CERN Document Server

    Fortin, Jeffrey B

    2004-01-01

    Chemical Vapor Deposition Polymerization - The Growth and Properties of Parylene Thin Films is intended to be valuable to both users and researchers of parylene thin films. It should be particularly useful for those setting up and characterizing their first research deposition system. It provides a good picture of the deposition process and equipment, as well as information on system-to-system variations that is important to consider when designing a deposition system or making modifications to an existing one. Also included are methods to characterizae a deposition system's pumping properties as well as monitor the deposition process via mass spectrometry. There are many references that will lead the reader to further information on the topic being discussed. This text should serve as a useful reference source and handbook for scientists and engineers interested in depositing high quality parylene thin films.

  17. Comparison between ZnO nanowires grown by chemical vapor deposition and hydrothermal synthesis

    Science.gov (United States)

    Podrezova, L. V.; Porro, S.; Cauda, V.; Fontana, M.; Cicero, G.

    2013-11-01

    Vertically aligned zinc oxide nanowires (NWs) were synthesized by two different techniques: chemical vapor deposition (CVD) and hydrothermal synthesis. To compare the effects of different growth conditions, both F-doped SnO2 (FTO) coated-glass and silicon wafers were used as substrates. Before NWs growth, all the substrates were covered with a ZnO seed layer film obtained with the same procedure, which acts as nucleation site for the subsequent growth of the nanowires both during CVD and hydrothermal synthesis. We studied the influence of the two synthesis techniques and the growth duration on the final morphology, orientation, and density of the ZnO NWs using electron microscopy and X-ray diffraction, while the NWs optical quality was addressed by UV-Vis spectroscopy. By discussing advantages and disadvantages of both synthesis methods, we finally show that the application purpose often drives the choice of the NWs growth process and the substrate to be used.

  18. Low-Temperature Deposition of Zinc Oxide Film by Plasma-Assisted Mist Chemical Vapor Deposition

    Science.gov (United States)

    Takenaka, Kosuke; Okumura, Yusuke; Setsuhara, Yuichi

    2012-08-01

    Zinc oxide (ZnO) film deposition using a plasma-assisted mist chemical vapor deposition (CVD) with an inductively-coupled plasma source has been performed and the effects of the plasma exposure on film properties have been investigated with oxygen mixture ratio as a parameter. With increasing oxygen mixture ratio to Ar+O2(10%), the X-ray diffraction (XRD) results showed evident peaks of ZnO(0002), indicating that highly c-axis-oriented films were grown at low substrate temperatures below 200 °C. The deposition rate of ZnO films was as high as 100 nm/min. ZnO films with an optical transmittance of 75% for the visible region and a band gap energy of 3.32 eV have been obtained by using plasma-assisted mist CVD.

  19. Plasma-Assisted Mist Chemical Vapor Deposition of Zinc Oxide Films Using Solution of Zinc Acetate

    Science.gov (United States)

    Takenaka, Kosuke; Okumura, Yusuke; Setsuhara, Yuichi

    2013-01-01

    Zinc oxide (ZnO) film deposition has been carried out by plasma-assisted mist chemical vapor deposition (CVD) using a solution of zinc acetate [Zn(CH3COO)2], and the effects of plasma exposure on film properties have been investigated in terms of RF power. With increasing RF power, the results of the X-ray diffraction (XRD) patterns of ZnO films with plasma exposure showed the existence of crystallized ZnO films with plasma exposure. Under this condition, the substrate temperature was as low as 200 °C for a plasma exposure time of 20 min. The surface morphology shown by scanning electron microscopy (SEM) images shows that the ZnO films were textured with round grains, which is attributed to the effect of the use of mist with the precursor.

  20. Carbon nanowalls grown by microwave plasma enhanced chemical vapor deposition during the carbonization of polyacrylonitrile fibers

    Energy Technology Data Exchange (ETDEWEB)

    Li Jiangling; Su Shi; Kundrat, Vojtech; Abbot, Andrew M.; Ye, Haitao [School of Engineering and Applied Science, Aston University, Birmingham B4 7ET (United Kingdom); Zhou Lei [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Mushtaq, Fajer [Department of Mechanical Engineering, ETH Zurich, Zurich 8092 (Switzerland); Ouyang Defang [School of Life and Health Science, Aston University, Birmingham B4 7ET (United Kingdom); James, David; Roberts, Darren [Thermo Fisher Scientific, Stafford House, Hemel Hempstead HP2 7GE (United Kingdom)

    2013-01-14

    We used microwave plasma enhanced chemical vapor deposition (MPECVD) to carbonize an electrospun polyacrylonitrile (PAN) precursor to form carbon fibers. Scanning electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy were used to characterize the fibers at different evolution stages. It was found that MPECVD-carbonized PAN fibers do not exhibit any significant change in the fiber diameter, whilst conventionally carbonized PAN fibers show a 33% reduction in the fiber diameter. An additional coating of carbon nanowalls (CNWs) was formed on the surface of the carbonized PAN fibers during the MPECVD process without the assistance of any metallic catalysts. The result presented here may have a potential to develop a novel, economical, and straightforward approach towards the mass production of carbon fibrous materials containing CNWs.

  1. Macroscopic Synthesis of Vertically Aligned Carbon Nanotubes Using Floating Catalyst Chemical Vapor Deposition Method

    Science.gov (United States)

    Mirbagheri, S. Ahmad; Kazemzadeh, Asghar; Abedin Maghanaki, Amir

    2012-01-01

    In this paper, we report an efficient process to grow well-aligned carbon nanotube (CNT) arrays with a good area distribution density (about 5.6 ×107 CNT/mm2). Vertically aligned carbon nanotubes (VA-CNTs) have been produced by controlling flow rate, temperature and catalyst nanoparticles using a floating catalyst chemical vapor deposition (FC-CVD) technique. They were synthesized on quartz substrates at 800 °C from toluene as a carbon source. VA-CNT samples were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy and their surface area and pore size were determined by nitrogen adsorption analysis. The synthesized CNTs have a length of 500 µm and diameters ranging from 120±40 nm. The CNT filaments form a strength structure and exhibit a good vertical alignment. The remarkable properties of CNTs make them attractive for separation applications, especially for water and wastewater treatment.

  2. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device

    Directory of Open Access Journals (Sweden)

    W. J. Liu

    2016-01-01

    Full Text Available We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer. It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements. The memory window is 5.6 V for a dual sweep of ±12 V at room temperature. Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.

  3. Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Scifres, D.R.; Burnham, R.D.; Bernstein, M.; Chung, H.; Endicott, F.; Mosby, W.; Tramontana, J.; Walker, J.; Yingling, R.D. Jr.

    1982-09-15

    The threshold current density, laser wavelength, grown layer thickness, reverse breakdown voltage, and far-field radiation pattern as a function of position on the grown wafer are reported for broad area multiple quantum well GaAlAs heterostructure lasers grown by metalorganic chemical vapor deposition. It is found that the layer thickness varies across a 1.5-in. sample by as much as 20% at the outer edges of the water, leading to a lasing wavelength shift of as much as 150 A owing to the quantum size effect. It is shown that this thickness variation has only a small effect on the threshold current density across the water such that the uniformity of threshold current density is comparable to that reported previously for molecular beam epitaxy-grown conventional double heterostructure lasers.

  4. Improved carrier mobility of chemical vapor deposition-graphene by counter-doping with hydrazine hydrate

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Zhiying; Zhang, Yanhui; Zhang, Haoran; Sui, Yanping; Zhang, Yaqian; Ge, Xiaoming; Yu, Guanghui, E-mail: ghyu@mail.sim.ac.cn; Xie, Xiaoming; Li, Xiaoliang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Jin, Zhi; Liu, Xinyu [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)

    2015-03-02

    We developed a counter-doping method to tune the electronic properties of chemical vapor deposition (CVD)-grown graphene by varying the concentration and time of graphene exposure to hydrazine hydrate (N{sub 2}H{sub 4}·H{sub 2}O). The shift of G and 2D peaks of Raman spectroscopy is analyzed as a function of N{sub 2}H{sub 4}·H{sub 2}O concentration. The result revealed that N{sub 2}H{sub 4}·H{sub 2}O realized n-type doping on CVD grown graphene. X-ray photoelectron spectroscopy measurement proved the existence of nitrogen, which indicated the adsorption of N{sub 2}H{sub 4} on the surface of graphene. After counter-doping, carrier mobility, which was measured by Hall measurements, increased three fold.

  5. Fabrication of Rare Earth-Doped Transparent Glass Ceramic Optical Fibers by Modified Chemical Vapor Deposition

    CERN Document Server

    Blanc, Wilfried; Nguyen, Luan; Bhaktha, S N B; Sebbah, Patrick; Pal, Bishnu P; Dussardier, Bernard

    2011-01-01

    Rare earth (RE) doped silica-based optical fibers with transparent glass ceramic (TGC) core was fabricated through the well-known modified chemical vapor deposition (MCVD) process without going through the commonly used stage of post-ceramming. The main characteristics of the RE-doped oxyde nanoparticles namely, their density and mean diameter in the fibers are dictated by the concentration of alkaline earth element used as phase separating agent. Magnesium and erbium co-doped fibers were fabricated. Optical transmission in term of loss due to scattering as well as some spectroscopic characteristics of the erbium ions was studied. For low Mg content, nano-scale particles could be grown with and relatively low scattering losses were obtained, whereas large Mg-content causes the growth of larger particles resulting in much higher loss. However in the latter case, certain interesting alteration of the spectroscopic properties of the erbium ions were observed. These initial studies should be useful in incorporati...

  6. Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method

    Science.gov (United States)

    Lee, Yoobeen; Jeong, Heekyung; Park, Yi-Seul; Han, Seulki; Noh, Jaegeun; Lee, Jin Seok

    2018-02-01

    Anisotropic transition metal dichalcogenide (TMDC) domains have stimulated a growing interest mainly due to their electronic properties that depend on the size, shape, and edge structures of the domains. In this work, we investigated the anisotropic morphogenesis and edge terminations of tungsten diselenide (WSe2) domains grown on sapphire substrates by chemical vapor deposition (CVD) using tungsten oxide (WO3) and selenium (Se) powders as precursors. We varied the amount of Se powder and growth temperature during the CVD process, which in turn caused variations in the growth mechanism and kinetic energies of precursors. We succeeded in synthesizing hexagonal, square, circular, and triangular anisotropic WSe2 domains. They were characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) analyses, and atomic force microscopy (AFM). Furthermore, we proposed the growth mechanism of anisotropic WSe2 domains with different edge terminations based on experimental observations through scanning tunneling microscope (STM).

  7. Catalytic Chemical Vapor Deposition Synthesis of Carbon Aerogels of High-Surface Area and Porosity

    Directory of Open Access Journals (Sweden)

    Armando Peña

    2012-01-01

    Full Text Available In this work carbon aerogels were synthesized by catalytic chemical vapor deposition method (CCVD. Ferrocene were employed as a source both of catalytic material (Fe and of carbon. Gaseous hydrogen and argon were used as reductant and carrier gas, respectively. The products of reaction were collected over alumina. The morphology and textural properties of the soot produced in the reaction chamber were investigated using Scanning Electron Microscopy, High-Resolution Transmission Electron Microscopy, X-ray photoelectron spectroscopy, and N2 physisorption (BET and BHJ methods. After the evaluation of the porous structure of the synthesized products, 780 ± 20 m2/g of SBET and 0.55 ± 0.02 cm3/g of VBJH were found. The presence of iron carbide and the partial oxidation of carbon nanostructures were revealed by XPS.

  8. Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Muñoz, R; Munuera, C; Martínez, J I; Azpeitia, J; Gómez-Aleixandre, C; García-Hernández, M

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  9. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  10. Development of aerosol assisted chemical vapor deposition for thin film fabrication

    Science.gov (United States)

    Maulana, Dwindra Wilham; Marthatika, Dian; Panatarani, Camellia; Mindara, Jajat Yuda; Joni, I. Made

    2016-02-01

    Chemical vapor deposition (CVD) is widely used to grow a thin film applied in many industrial applications. This paper report the development of an aerosol assisted chemical vapor deposition (AACVD) which is one of the CVD methods. Newly developed AACVD system consists of a chamber of pyrex glass, two wire-heating elements placed to cover pyrex glass, a substrate holder, and an aerosol generator using an air brush sprayer. The temperature control system was developed to prevent condensation on the chamber walls. The control performances such as the overshoot and settling time were obtained from of the developed temperature controller. Wire-heating elements were controlled at certain setting value to heat the injected aerosol to form a thin film in the substrate. The performance of as-developed AACVD system tested to form a thin film where aerosol was sprayed into the chamber with a flow rate of 7 liters/minutes, and vary in temperatures and concentrations of precursor. The temperature control system have an overshoot around 25 °C from the desired set point temperature, very small temperature ripple 2 °C and a settling time of 20 minutes. As-developed AACVD successfully fabricated a ZnO thin film with thickness of below 1 µm. The performances of system on formation of thin films influenced by the generally controlled process such as values of setting temperature and concentration where the aerosol flow rate was fixed. Higher temperature was applied, the more uniform ZnO thin films were produced. In addition, temperature of the substrate also affected on surface roughness of the obtained films, while concentration of ZnO precursor determined the thickness of produce films. It is concluded that newly simple AACVD can be applied to produce a thin film.

  11. Prediction of aqueous solubility, vapor pressure and critical micelle concentration for aquatic partitioning of perfluorinated chemicals.

    Science.gov (United States)

    Bhhatarai, Barun; Gramatica, Paola

    2011-10-01

    The majority of perfluorinated chemicals (PFCs) are of increasing risk to biota and environment due to their physicochemical stability, wide transport in the environment and difficulty in biodegradation. It is necessary to identify and prioritize these harmful PFCs and to characterize their physicochemical properties that govern the solubility, distribution and fate of these chemicals in an aquatic ecosystem. Therefore, available experimental data (10-35 compounds) of three important properties: aqueous solubility (AqS), vapor pressure (VP) and critical micelle concentration (CMC) on per- and polyfluorinated compounds were collected for quantitative structure-property relationship (QSPR) modeling. Simple and robust models based on theoretical molecular descriptors were developed and externally validated for predictivity. Model predictions on selected PFCs were compared with available experimental data and other published in silico predictions. The structural applicability domains (AD) of the models were verified on a bigger data set of 221 compounds. The predicted properties of the chemicals that are within the AD, are reliable, and they help to reduce the wide data gap that exists. Moreover, the predictions of AqS, VP, and CMC of most common PFCs were evaluated to understand the aquatic partitioning and to derive a relation with the available experimental data of bioconcentration factor (BCF).

  12. Synthesis of scalable and tunable slightly oxidized graphene via chemical vapor deposition.

    Science.gov (United States)

    Sagar, Rizwan Ur Rehman; Namvari, Mina; Navale, Sachin T; Stadler, Florian J

    2017-03-15

    Semiconducting, large sheets of carbon as an active material in optoelectronic research are missing and reduced graphene oxide (rGO) can be a good candidate. However, chemical synthesis cannot produce large sheets of rGO (i.e. maximum: 20-30μm) as well as high quality rGO due to the restraints of fabrication method. Thus, a novel strategy for the synthesis of large sheets of semiconducting rGO is urgently required. Large area slightly oxidized graphene (SOG) is fabricated at the interface of silicon dioxide (SiO2) and silicon via Chemical Vapor Deposition (CVD) method, herein for the first time. Carbon atoms bond with oxygen functionalities (i.e. CO, COH) at the time of diffusion in SiO2 allowing for C/O ratios from 7 to 10 adjustable by the variation of SiO2 thickness, indicating the tunable oxidation. Moreover, electronic structure and morphology of SOG are similar to the chemically grown rGO. The fabrication mechanism of SOG is also investigated. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate by oxidative/initiated chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Alper Balkan

    2017-04-01

    Full Text Available Vapor-phase synthesis techniques of polymeric nanostructures offer unique advantages over conventional, solution-based techniques because of their solventless nature. In this work, we report the fabrication of coaxial polymer nanotubes using two different chemical vapor deposition methods. The fabrication process involves the deposition of an outer layer of the conductive polyaniline (PANI by oxidative chemical vapor deposition, followed by the deposition of the inner layer of poly(2-hydroxyethyl methacrylate (pHEMA hydrogel by initiated chemical vapor deposition. The vapor-phase techniques allowed for fine-tuning of the thickness of the individual layers, keeping the functionalities of the polymers intact. The response of the single components and the coaxial nanotubes to changes in humidity was investigated for potential humidity sensor applications. For single-component conductive PANI nanotubes, the resistance changed parabolically with relative humidity because of competing effects of doping and swelling of the PANI polymer under humid conditions. Introducing a hydrogel inner layer increased the overall resistance, and enhanced swelling, which caused the resistance to continuously increase with relative humidity.

  14. Synthesis of coaxial nanotubes of polyaniline and poly(hydroxyethyl methacrylate) by oxidative/initiated chemical vapor deposition.

    Science.gov (United States)

    Balkan, Alper; Armagan, Efe; Ozaydin Ince, Gozde

    2017-01-01

    Vapor-phase synthesis techniques of polymeric nanostructures offer unique advantages over conventional, solution-based techniques because of their solventless nature. In this work, we report the fabrication of coaxial polymer nanotubes using two different chemical vapor deposition methods. The fabrication process involves the deposition of an outer layer of the conductive polyaniline (PANI) by oxidative chemical vapor deposition, followed by the deposition of the inner layer of poly(2-hydroxyethyl methacrylate) (pHEMA) hydrogel by initiated chemical vapor deposition. The vapor-phase techniques allowed for fine-tuning of the thickness of the individual layers, keeping the functionalities of the polymers intact. The response of the single components and the coaxial nanotubes to changes in humidity was investigated for potential humidity sensor applications. For single-component conductive PANI nanotubes, the resistance changed parabolically with relative humidity because of competing effects of doping and swelling of the PANI polymer under humid conditions. Introducing a hydrogel inner layer increased the overall resistance, and enhanced swelling, which caused the resistance to continuously increase with relative humidity.

  15. Ni–Mo and Co–Mo alloy nanoparticles for catalytic chemical vapor deposition synthesis of carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Lobiak, E.V., E-mail: lobiakev@niic.sbras.ru [Nikolaev Institute of Inorganic Chemistry, SB RAS, 3 Acad. Lavrentiev Ave., 630090 Novosibirsk (Russian Federation); Shlyakhova, E.V.; Bulusheva, L.G.; Plyusnin, P.E.; Shubin, Yu.V.; Okotrub, A.V. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 3 Acad. Lavrentiev Ave., 630090 Novosibirsk (Russian Federation); Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090 (Russian Federation)

    2015-02-05

    Highlights: • Thermal decomposition of the ε-Keggin-type polyoxomolybdate clusters Mo{sub 12}O{sub 28}(μ{sub 2}-OH){sub 12}{Ni(H_2O)_3}{sub 4} and Mo{sub 12}O{sub 28}(μ{sub 2}-OH){sub 12}{Co(H_2O)_3}{sub 4} produces NiMoO{sub 4} and CoMoO{sub 4} phases. • The NiMoO{sub 4} and CoMoO{sub 4} phases are converted in alloys with a metal ratio of 1:1. • The Ni–Mo and Co–Mo alloy nanoparticles catalyze a CCVD growth of carbon nanotubes. - Abstract: Here, we show for the first time a catalytic chemical vapor deposition (CCVD) synthesis of carbon nanotubes (CNTs) using polyoxomolybdate clusters Mo{sub 12}O{sub 28}(μ{sub 2}-OH){sub 12}{Ni(H_2O)_3}{sub 4} and Mo{sub 12}O{sub 28}(μ{sub 2}-OH){sub 12}{Co(H_2O)_3}{sub 4} as a source of catalyst nanoparticles. X-ray diffraction analyses indicated that the products of thermal decomposition of the clusters contain NiMoO{sub 4} and CoMoO{sub 4} phases, which are converted into Ni–Mo and Co–Mo alloys at 900 °C in hydrogen environment. High-resolution transmission electron microscopy in combination with energy-dispersive X-ray spectroscopy confirmed the CNT growth from bimetallic nanoparticles. Synergism between two metals in an alloy resulted in large-scale production of non-bundled few-walled CNTs with narrow diameter distribution and high quality.

  16. Differential effects of thermal and chemical stressors on tissue balls ...

    African Journals Online (AJOL)

    Coral cell aggregates (tissue balls) from four species (Acropora muricata, Fungia repanda, Pavona cactus and Pocillopora damicornis) were used as an indicator to investigate the effects on the corals of thermal stress and of chemical extracts from three sponges (Adocia sp., Haliclona sp. and Lissodendoryx sp.) and one ...

  17. Fuels and chemicals from biomass using solar thermal energy

    Science.gov (United States)

    Giori, G.; Leitheiser, R.; Wayman, M.

    1981-01-01

    The significant nearer term opportunities for the application of solar thermal energy to the manufacture of fuels and chemicals from biomass are summarized, with some comments on resource availability, market potential and economics. Consideration is given to the production of furfural from agricultural residues, and the role of furfural and its derivatives as a replacement for petrochemicals in the plastics industry.

  18. Chemical and thermal properties of VIP latrine sludge | Zuma | Water ...

    African Journals Online (AJOL)

    The samples were analysed for: moisture content; volatile solids; chemical oxygen demand; ammonia; total Kjeldahl nitrogen; pH; orthophosphate; thermal conductivity; calorific value and heat capacity. These properties will facilitate the design of faecal sludge emptying and treatment equipment. A manual sorting of the pit ...

  19. An Assay of some Thermal Characteristics, Chemical and ...

    African Journals Online (AJOL)

    ADOWIE PERE

    JASEM ISSN 1119-8362. All rights reserved. J. Appl. Sci. Environ. Manage. August 2017. Vol. 21 (5) 931-935. Full-text Available Online at www.ajol.infoand www.bioline.org.br/ja. An Assay of some Thermal Characteristics, Chemical and Phytochemical Constituents of Hymenocarida Acida Timber. *. 1. UDEOZO, IP;. 2.

  20. Engineered Barrier Systems Thermal-Hydraulic-Chemical Column Test Report

    Energy Technology Data Exchange (ETDEWEB)

    W.E. Lowry

    2001-12-13

    The Engineered Barrier System (EBS) Thermal-Hydraulic-Chemical (THC) Column Tests provide data needed for model validation. The EBS Degradation, Flow, and Transport Process Modeling Report (PMR) will be based on supporting models for in-drift THC coupled processes, and the in-drift physical and chemical environment. These models describe the complex chemical interaction of EBS materials, including granular materials, with the thermal and hydrologic conditions that will be present in the repository emplacement drifts. Of particular interest are the coupled processes that result in mineral and salt dissolution/precipitation in the EBS environment. Test data are needed for thermal, hydrologic, and geochemical model validation and to support selection of introduced materials (CRWMS M&O 1999c). These column tests evaluated granular crushed tuff as potential invert ballast or backfill material, under accelerated thermal and hydrologic environments. The objectives of the THC column testing are to: (1) Characterize THC coupled processes that could affect performance of EBS components, particularly the magnitude of permeability reduction (increases or decreases), the nature of minerals produced, and chemical fractionation (i.e., concentrative separation of salts and minerals due to boiling-point elevation). (2) Generate data for validating THC predictive models that will support the EBS Degradation, Flow, and Transport PMR, Rev. 01.

  1. Pore-scale modeling of vapor transport in partially saturated capillary tube with variable area using chemical potential

    DEFF Research Database (Denmark)

    Addassi, Mouadh; Schreyer, Lynn; Johannesson, Björn

    2016-01-01

    Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters and the nu......Here we illustrate the usefulness of using the chemical potential as the primary unknown by modeling isothermal vapor transport through a partially saturated cylindrically symmetric capillary tube of variable cross-sectional area using a single equation. There are no fitting parameters...... and the numerical solutions to the equation are compared with experimental results with excellent agreement. We demonstrate that isothermal vapor transport can be accurately modeled without modeling the details of the contact angle, microscale temperature fluctuations, or pressure fluctuations using a modification...

  2. High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

    Science.gov (United States)

    Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

    1997-01-01

    The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

  3. Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Groenland, A.W.; Sanders, Remco G.P.; Gardeniers, Johannes G.E.

    2009-01-01

    The results of a study on electrical conduction in low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C are described. Current density versus electrical field characteristics are measured as a function of temperature for 100 and 200 nm thick stoichiometric

  4. Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

    NARCIS (Netherlands)

    Popadic, M.; Scholtes, T.L.M.; De Boer, W.; Sarubbi, F.; Nanver, L.K.

    2009-01-01

    An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation

  5. Extension of the lifetime of tantalum filaments in the hot-wire (Cat) 3 Chemical Vapor Deposition process

    CSIR Research Space (South Africa)

    Knoesen, D

    2008-01-01

    Full Text Available One of the prime components of a hot-wire (Cat) Chemical Vapor Deposition system is the filament used to pyro-catalytically crack the gases like silane. Burnt out tantalum filaments were studied to determine the possible improvement of lifetime...

  6. Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

    DEFF Research Database (Denmark)

    Storgaard-Larsen, Torben; Leistiko, Otto

    1997-01-01

    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been...

  7. The influence of methanol addition during the film growth of SnO 2 by atmospheric pressure chemical vapor deposition

    NARCIS (Netherlands)

    Volintiru, I.; Graaf, A. de; Deelen, J. van; Poodt, P.W.G.

    2011-01-01

    Undoped tin oxide (SnO2) thin films have been deposited in a stagnant point flow chemical vapor deposition reactor from a water/tin tetrachloride mixture. By adding methanol during the deposition process the film electrical properties change significantly: ten times more conductive SnO 2 films are

  8. Microstructural and frictional control of diamond-like carbon films deposited on acrylic rubber by plasma assisted chemical vapor deposition

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Schenkel, M.; Pei, Y.T.; Hosson, J.Th.M. De

    2011-01-01

    In this paper we concentrate on the microstructure of diamond-like carbon films prepared by plasma assisted chemical vapor deposition on acrylic rubber. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was monitored and controlled as a

  9. Laser-induced chemical vapor deposition of nanostructured silicon carbonitride thin films

    Science.gov (United States)

    Besling, W. F. A.; Goossens, A.; Meester, B.; Schoonman, J.

    1998-01-01

    Laser-induced chemical vapor deposition of silicon carbonitride thin films has been investigated using a continuous wave CO2 laser in parallel configuration with the substrate. The reactant gases in this process, hexamethyl disilazane and ammonia, are rapidly heated by CO2 laser radiation due to their absorption of the laser energy. Polymerlike silicon carbonitride films or agglomerated nanosized particles are formed depending on process conditions. Dense, smooth films or nanostructured deposits have been synthesized at low substrate temperatures (Tssilicon and can be obtained with controlled microstructures. Surface morphology, composition, and type of chemical bonding have been studied with electron microscopy and spectroscopic analysis and are correlated to the most important laser process parameters. X-ray photoelectron spectroscopy and reflectance Fourier transform infrared spectroscopy show that the deposits consist of Si-N, Si-C, and Si-O bonds, linked together in a x-ray amorphous, polymerlike structure. The nitrogen content is about 40% and can be varied by adding ammonia to the reactant gas flow. The layers are readily contaminated with oxygen after exposure to air, caused by hydrolysis and/or oxidation.

  10. A directly patternable click-active polymer film via initiated chemical vapor deposition (iCVD)

    Energy Technology Data Exchange (ETDEWEB)

    Im, Sung Gap; Kim, Byeong-Su; Tenhaeff, Wyatt E.; Hammond, Paula T. [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Gleason, Karen K., E-mail: kkg@mit.ed [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2009-04-30

    A new 'click chemistry' active functional polymer film was directly obtained from a commercially available monomer of propargyl acrylate (PA) via easy, one-step process of initiated chemical vapor deposition (iCVD). Fourier transform infrared (FTIR) spectra confirmed that significant amount of the click-active acetylene functional group was retained after the iCVD process. The degree of crosslinking could be controlled by intentionally adding crosslinker, such as ethylene glycol diacrylate (EGDA) that was polymerized with PA to form click-active, completely insoluble copolymer. The formed iCVD polymers could also be grafted on various inorganic substrates with silane coupling agents. These crosslinking and grafting techniques give iCVD polymers chemical and mechanical stability, which allows iCVD polymers applicable to various click chemistry without any modification of reaction conditions. Pre-patterned iCVD polymer could be obtained via photolithography and an azido-functionalized dye molecule was also successfully attached on iCVD polymer via click chemistry. Moreover, pPA film demonstrated sensitivity to e-beam irradiation, which enabled clickable substrates having nanometer scale patterns without requiring the use of an additional e-beam resist. Direct e-beam exposure of this multifunctional iCVD layer, a 200 nm pattern, and QD particles were selectively conjugated on the substrates via click chemistry. Thus, iCVD pPA has shown dual functionality as of 'clickable' e-beam sensitive material.

  11. Chemical vapor deposition growth of boron–carbon–nitrogen layers from methylamine borane thermolysis products

    Science.gov (United States)

    Leardini, Fabrice; Flores, Eduardo; Galvis E, Andrés R.; Ferrer, Isabel J.; Ramón Ares, José; Sánchez, Carlos; Molina, Pablo; van der Meulen, Herko P.; Gómez Navarro, Cristina; López Polin, Guillermo; Urbanos, Fernando J.; Granados, Daniel; García-García, F. Javier; Demirci, Umit B.; Yot, Pascal G.; Mastrangelo, Filippo; Grazia Betti, Maria; Mariani, Carlo

    2018-01-01

    This work investigates the growth of B–C–N layers by chemical vapor deposition using methylamine borane (MeAB) as the single-source precursor. MeAB has been synthesized and characterized, paying particular attention to the analysis of its thermolysis products, which are the gaseous precursors for B–C–N growth. Samples have been grown on Cu foils and transferred onto different substrates for their morphological, structural, chemical, electronic and optical characterizations. The results of these characterizations indicate a segregation of h-BN and graphene-like (Gr) domains. However, there is an important presence of B and N interactions with C at the Gr borders, and of C interacting at the h-BN-edges, respectively, in the obtained nano-layers. In particular, there is a significant presence of C–N bonds, at Gr/h-BN borders and in the form of N doping of Gr domains. The overall B:C:N contents in the layers is close to 1:3:1.5. A careful analysis of the optical bandgap determination of the obtained B–C–N layers is presented, discussed and compared with previous seminal works with samples of similar composition.

  12. Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

    KAUST Repository

    Chang, Yung-Huang

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.

  13. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis

    2010-05-25

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4- ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness (∼ 0.9 nm) and offered sheet resistance down to 230 Ω/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (η) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138°, whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60°. Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications. © 2010 American Chemical Society.

  14. Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration.

    Science.gov (United States)

    Chen, Zongping; Zhang, Wen; Palma, Carlos-Andres; Lodi Rizzini, Alberto; Liu, Bilu; Abbas, Ahmad; Richter, Nils; Martini, Leonardo; Wang, Xiao-Ye; Cavani, Nicola; Lu, Hao; Mishra, Neeraj; Coletti, Camilla; Berger, Reinhard; Klappenberger, Florian; Kläui, Mathias; Candini, Andrea; Affronte, Marco; Zhou, Chongwu; De Renzi, Valentina; Del Pennino, Umberto; Barth, Johannes V; Räder, Hans Joachim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus

    2016-11-30

    Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the heteroatom doping and heterojunctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.

  15. Synthesis of carbon nanotubes by arc-discharge and chemical vapor deposition method with analysis of its morphology, dispersion and functionalization characteristics

    Directory of Open Access Journals (Sweden)

    Ritu Sharma

    2015-12-01

    Full Text Available In this paper, multi-walled carbon nanotubes are synthesized by arc-discharge and chemical vapor decomposition methods. Multi-walled carbon nanotubes are synthesized on thin film of nickel sputtered on silicon substrate by thermal chemical vapor deposition of acetylene at a temperature of 750°C. The flow of current in arc-discharge method varies in the range 50–200 A. Further arc-synthesized carbon nanotubes are characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and the results are compared with nanotubes grown by chemical vapor deposition method. XRD result shows a characteristic peak (0 0 2 at 26.54° corresponding to the presence of carbon nanotubes. SEM and TEM results give morphology of as-synthesized multi-walled nanotubes. TEM results indicate synthesis of well-graphitized carbon nanotubes by arc-discharge method. Dispersion of arc-synthesized nanotubes in SDS solution under the effect of different sonication times is studied. Dispersion of nanotubes in SDS solution is analyzed using UV–vis–NIR spectroscopy and it shows an absorption peak at 260 nm. It was found that with the increase in sonication time, the absorption peak in UV–vis–NIR spectra will increase and optimum sonication time was 2 hours. Functionalization of synthesized carbon nanotubes by H2SO4 and HNO3 acids has been studied and analysis of functionalized groups has been done using FT-IR spectroscopy and compared and the results are reported in this paper. FT-IR spectroscopy verifies the presence of carboxylic groups attached to carbon nanotubes. These functional groups may change properties of carbon nanotubes and may be used in vast applications of carbon nanotubes.

  16. Symmetry Switching of Negative Thermal Expansion by Chemical Control.

    Science.gov (United States)

    Senn, Mark S; Murray, Claire A; Luo, Xuan; Wang, Lihai; Huang, Fei-Ting; Cheong, Sang-Wook; Bombardi, Alessandro; Ablitt, Chris; Mostofi, Arash A; Bristowe, Nicholas C

    2016-05-04

    The layered perovskite Ca3-xSrxMn2O7 is shown to exhibit a switching from a material exhibiting uniaxial negative to positive thermal expansion as a function of x. The switching is shown to be related to two closely competing phases with different symmetries. The negative thermal expansion (NTE) effect is maximized when the solid solution is tuned closest to this region of phase space but is switched off suddenly on passing though the transition. Our results show for the first time that, by understanding the symmetry of the competing phases alone, one may achieve unprecedented chemical control of this unusual property.

  17. Thermal performance of a vapor chamber-based plate of high-power light-emitting diodes filled with Al2O3 nanofluid.

    Science.gov (United States)

    Wang, Jung-Chang; Lin, Cherng-Yuan; Chen, Teng-Chieh

    2013-04-01

    Nanofluid that contains Al2O3 nanoparticles evenly dispersed in deionized water is considered to have superior heat transfer characteristics due to the significant increase in both collision frequency and contact surface area between the nanoparticles and the deionized water. The thermal performance of the vapor chamber-based plate of a high power light-emitting diode (LED) filled with Al2O3 nanofluid was experimentally investigated. The thermal characteristics of the vapor chamber were also compared with those of copper- and aluminum-based plates exposed to the heating source of four single-crystal LEDs. The experimental results show that the effective thermal conductivity of the vapor chamber increased with an increase in heat flux. A higher heating power caused an increase in the temperature variation in the vapor chamber, the illumination of the vapor chamber-, copper-, and aluminum-based plates, and the material resistance of the copper- and aluminum-based plates. In contrast, the spreading, convective, and total thermal resistance all decreased with an increase in heating power for all three base plates. The total thermal resistance of the vapor chamber is mostly due to its spreading thermal resistance, and appeared to be lower than that of the copper- and aluminum-based plates under a heating power of over 5 Watts.

  18. Behavior and kinetic of hydrolysis of amine boranes in acid media employed in chemical vapor generation.

    Science.gov (United States)

    D'Ulivo, Lucia; Spiniello, Roberto; Onor, Massimo; Campanella, Beatrice; Mester, Zoltan; D'Ulivo, Alessandro

    2018-01-15

    The behavior of NaBH4 (THB) and the amine boranes, NH3BH3 (AB), tertbutylNH2BH3 (TBAB), Me2NHBH3 (DMAB) was investigated in continuous flow chemical vapor generation of H2Se from aqueous Se(IV) coupled with atomic absorption spectrometry. Unexpected higher efficiency of H2Se generation was obtained with amine boranes compared to THB (TBAB > AB > THB) using millimolar concentration of reductant (0.001-0.1 mol L(-1)) under strongly acidic conditions (HCl, HClO4, H2SO4, HNO3, 0.5-5 mol L(-1) H(+)). Analytical applicability of the CVG system was tested by the determination of Se(IV) in natural water samples certified reference materials, using 0.01 mol L(-1) TBAB in 0.5 M H2SO4. In order to explain this unexpected higher efficiency of amine boranes with respect of THB, the kinetic of hydrolysis of AB, TBAB and DMAB was investigated in acid media typically employed in chemical vapor generation for trace element determination. The kinetic was investigated by monitoring the rate the hydrogen gas evolved during hydrolysis, using a laboratory made thermostated reaction cell. Kinetics were measured for AB, TBAB and DMAB in 0.1, 0.5, 5 mol L(-1) HCl or HClO4 reaction media and in 0.1 mol L(-1) cysteine +0.1 mol L(-1) HCl or HClO4 buffer, for reaction times from 0 to 30 min. Under strongly acidic conditions, the rates of hydrogen evolution produced by amine boranes hydrolysis appear to be much slower than those predicted by a pseudo-first order reaction and using the rate constants reported in the literature. This suggests that, at elevated acidities (5 mol L(-1) HCl or HClO4), the hydrolysis of amine boranes takes place in two steps, generating a first amount of H2 (0.67-1.15 mol) much faster than the remaining about 2 mol. This evidence indicates a different mechanism of hydrolysis to the one accepted in the literature for amine boranes. The relatively high efficiencies of H2Se observed with amine borane reduction of inorganic Se(IV) at elevated

  19. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  20. Virtual test bench as a complement to study thermal area: application in vapor compression systems

    National Research Council Canada - National Science Library

    Juan Manuel Belman-Flores; Juan Manuel Barroso-Maldonado; Santos Mendez-Díaz; Simón Martínez-Martínez

    2015-01-01

    Este artículo describe un simulador educativo desarrollado en el software Engineering Equation Solver para representar el comportamiento de un sistema de compresión de vapor. La aplicación está enfocada...

  1. Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In₂O₃ from In(tmhd)₃ as a solid precursor.

    Science.gov (United States)

    Szkutnik, P D; Angélidès, L; Todorova, V; Jiménez, C

    2016-02-01

    A solid delivery system consisting of a source canister, a gas management, and temperature controlled enclosure designed and manufactured by Air Liquide Electronics Systems was tested in the context of gas-phase delivery of the In(tmhd)3 solid precursor. The precursor stream was delivered to a thermal metalorganic chemical vapor deposition reactor to quantify deposition yield under various conditions of carrier gas flow and sublimation temperature. The data collected allowed the determination of characteristic parameters such as the maximum precursor flow rate (18.2 mg min(-1) in specified conditions) and the critical mass (defined as the minimum amount of precursor able to attain the maximum flow rate) found to be about 2.4 g, as well as an understanding of the influence of powder distribution inside the canister. Furthermore, this qualification enabled the determination of optimal delivery conditions which allowed for stable and reproducible precursor flow rates over long deposition times (equivalent to more than 47 h of experiment). The resulting In2O3 layers was compared with those elaborated via pulsed liquid injection obtained in the same chemical vapor deposition chamber and under the same deposition conditions.

  2. Qualification of a sublimation tool applied to the case of metalorganic chemical vapor deposition of In2O3 from In(tmhd)3 as a solid precursor

    Science.gov (United States)

    Szkutnik, P. D.; Angélidès, L.; Todorova, V.; Jiménez, C.

    2016-02-01

    A solid delivery system consisting of a source canister, a gas management, and temperature controlled enclosure designed and manufactured by Air Liquide Electronics Systems was tested in the context of gas-phase delivery of the In(tmhd)3 solid precursor. The precursor stream was delivered to a thermal metalorganic chemical vapor deposition reactor to quantify deposition yield under various conditions of carrier gas flow and sublimation temperature. The data collected allowed the determination of characteristic parameters such as the maximum precursor flow rate (18.2 mg min-1 in specified conditions) and the critical mass (defined as the minimum amount of precursor able to attain the maximum flow rate) found to be about 2.4 g, as well as an understanding of the influence of powder distribution inside the canister. Furthermore, this qualification enabled the determination of optimal delivery conditions which allowed for stable and reproducible precursor flow rates over long deposition times (equivalent to more than 47 h of experiment). The resulting In2O3 layers was compared with those elaborated via pulsed liquid injection obtained in the same chemical vapor deposition chamber and under the same deposition conditions.

  3. Advanced Organic Vapor Cycles for Improving Thermal Conversion Efficiency in Renewable Energy Systems

    OpenAIRE

    Ho, Tony

    2012-01-01

    The Organic Flash Cycle (OFC) is proposed as a vapor power cycle that could potentially increase power generation and improve the utilization efficiency of renewable energy and waste heat recovery systems. A brief review of current advanced vapor power cycles including the Organic Rankine Cycle (ORC), the zeotropic Rankine cycle, the Kalina cycle, the transcritical cycle, and the trilateral flash cycle is presented. The premise and motivation for the OFC concept is that essentially by impro...

  4. Estimation of the Total Atmospheric Water Vapor Content and Land Surface Temperature Based on AATSR Thermal Data

    Science.gov (United States)

    Zhang, Tangtang; Wen, Jun; van der Velde, Rogier; Meng, Xianhong; Li, Zhenchao; Liu, Yuanyong; Liu, Rong

    2008-01-01

    The total atmospheric water vapor content (TAWV) and land surface temperature (LST) play important roles in meteorology, hydrology, ecology and some other disciplines. In this paper, the ENVISAT/AATSR (The Advanced Along-Track Scanning Radiometer) thermal data are used to estimate the TAWV and LST over the Loess Plateau in China by using a practical split window algorithm. The distribution of the TAWV is accord with that of the MODIS TAWV products, which indicates that the estimation of the total atmospheric water vapor content is reliable. Validations of the LST by comparing with the ground measurements indicate that the maximum absolute derivation, the maximum relative error and the average relative error is 4.0K, 11.8% and 5.0% respectively, which shows that the retrievals are believable; this algorithm can provide a new way to estimate the LST from AATSR data. PMID:27879795

  5. X-ray absorption study of diamond films grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, X.; Ruckman, M.W.; Skotheim, T.A. (Brookhaven National Laboratory, Upton, New York 11973 (USA)); den Boer, M.; Zheng, Y. (The City University of New York, New York, New York 10021 (USA)); Badzian, A.R.; Badzian, T.; Messier, R. (The Pennsylvania State University, University Park, Pennsylvania 16802 (USA)); Srivatsa, A.R. (Moltech Corporation, Stony Brook, New York 11974 (USA))

    1991-05-01

    Carbon {ital k}-edge x-ray absorption fine structure (XAFS) is used to study the structure and bonding of chemical vapor deposition (CVD) grown diamond and diamond-like carbon films. Diamond films grown at 875 {degree}C on silicon using a 1% CH{sub 4} /H{sub 2} mixture have near-edge spectra resembling type 1(a) natural diamond. The {ital k}-edges of the diamond-like films grown by electron cyclotron resonance CVD at 200 {degree}C using 10{sup {minus}4} Torr of CH{sub 4} show a broad main peak lacking the sharp structure of graphite or diamond. Comparing the near edges of the CVD diamond film with other carbon compounds (i.e., graphite) and the CVD diamond film, the diamond-like film shows a strong {pi}* feature at 285 eV indicative of sp{sup 2} bonded carbon and a feature at 289 eV, the {sigma}*(C--H) resonance indicating C--H bonds. The relatively weak extended x-ray absorption fine structure (EXAFS) shows that the diamond-like carbon film is highly disordered on an atomic level.

  6. Robust numerical simulation of porosity evolution in chemical vapor infiltration III: three space dimension

    CERN Document Server

    Jin Shi

    2003-01-01

    Chemical vapor infiltration (CVI) process is an important technology to fabricate ceramic matrix composites (CMC's). In this paper, a three-dimension numerical model is presented to describe pore microstructure evolution during the CVI process. We extend the two-dimension model proposed in [S. Jin, X.L. Wang, T.L. Starr, J. Mater. Res. 14 (1999) 3829; S. Jin. X.L. Wang, T.L. Starr, X.F. Chen, J. Comp. Phys. 162 (2000) 467], where the fiber surface is modeled as an evolving interface, to the three space dimension. The 3D method keeps all the virtue of the 2D model: robust numerical capturing of topological changes of the interface such as the merging, and fast detection of the inaccessible pores. For models in the kinetic limit, where the moving speed of the interface is constant, some numerical examples are presented to show that this three-dimension model will effectively track the change of porosity, close-off time, location and shape of all pores.

  7. Control of nanoparticle agglomeration through variation of the time-temperature profile in chemical vapor synthesis

    Science.gov (United States)

    Djenadic, Ruzica; Winterer, Markus

    2017-02-01

    The influence of the time-temperature history on the characteristics of nanoparticles such as size, degree of agglomeration, or crystallinity is investigated for chemical vapor synthesis (CVS). A simple reaction-coagulation-sintering model is used to describe the CVS process, and the results of the model are compared to experimental data. Nanocrystalline titania is used as model material. Titania nanoparticles are generated from titanium-tetraisopropoxide (TTIP) in a hot-wall reactor. Pure anatase particles and mixtures of anatase, rutile (up to 11 vol.%), and brookite (up to 29 vol.%) with primary particle sizes from 1.7 nm to 10.5 nm and agglomerate particle sizes from 24.3 nm to 55.6 nm are formed depending on the particle time-temperature history. An inductively heated furnace with variable inductor geometry is used as a novel system to control the time-temperature profile in the reactor externally covering a large wall temperature range from 873 K to 2023 K. An appropriate choice of inductor geometry, i.e. time-temperature profile, can significantly reduce the degree of agglomeration. Other particle characteristics such as crystallinity are also substantially influenced by the time-temperature profile.

  8. Water-assisted growth of graphene on carbon nanotubes by the chemical vapor deposition method.

    Science.gov (United States)

    Feng, Jian-Min; Dai, Ye-Jing

    2013-05-21

    Combining carbon nanotubes (CNTs) with graphene has been proved to be a feasible method for improving the performance of graphene for some practical applications. This paper reports a water-assisted route to grow graphene on CNTs from ferrocene and thiophene dissolved in ethanol by the chemical vapor deposition method in an argon flow. A double injection technique was used to separately inject ethanol solution and water for the preparation of graphene/CNTs. First, CNTs were prepared from ethanol solution and water. The injection of ethanol solution was suspended and water alone was injected into the reactor to etch the CNTs. Thereafter, ethanol solution was injected along with water, which is the key factor in obtaining graphene/CNTs. Transmission electron microscopy, scanning electron microscopy, X-ray diffraction, and Raman scattering analyses confirmed that the products were the hybrid materials of graphene/CNTs. X-ray photo-electron spectroscopy analysis showed the presence of oxygen rich functional groups on the surface of the graphene/CNTs. Given the activity of the graphene/CNT surface, CdS quantum dots adhered onto it uniformly through simple mechanical mixing.

  9. Biocompatibility of Titania Nanotube Coatings Enriched with Silver Nanograins by Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Piotr Piszczek

    2017-09-01

    Full Text Available Bioactivity investigations of titania nanotube (TNT coatings enriched with silver nanograins (TNT/Ag have been carried out. TNT/Ag nanocomposite materials were produced by combining the electrochemical anodization and chemical vapor deposition methods. Fabricated coatings were characterized by scanning electron microscopy (SEM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. The release effect of silver ions from TNT/Ag composites immersed in bodily fluids, has been studied using inductively coupled plasma mass spectrometry (ICP-MS. The metabolic activity assay (MTT was applied to determine the L929 murine fibroblasts adhesion and proliferation on the surface of TNT/Ag coatings. Moreover, the results of immunoassays (using peripheral blood mononuclear cells—PBMCs isolated from rats allowed the estimation of the immunological activity of TNT/Ag surface materials. Antibacterial activity of TNT/Ag coatings with different morphological and structural features was estimated against two Staphylococcus aureus strains (ATCC 29213 and H9. The TNT/Ag nanocomposite layers produced revealed a good biocompatibility promoting the fibroblast adhesion and proliferation. A desirable anti-biofilm activity against the S. aureus reference strain was mainly noticed for these TiO2 nanotube coatings, which contain dispersed Ag nanograins deposited on their surface.

  10. Microwave plasma-assisted chemical vapor deposition of porous carbon film as supercapacitive electrodes

    Science.gov (United States)

    Wu, Ai-Min; Feng, Chen-Chen; Huang, Hao; Paredes Camacho, Ramon Alberto; Gao, Song; Lei, Ming-Kai; Cao, Guo-Zhong

    2017-07-01

    Highly porous carbon film (PCF) coated on nickel foam was prepared successfully by microwave plasma-assisted chemical vapor deposition (MPCVD) with C2H2 as carbon source and Ar as discharge gas. The PCF is uniform and dense with 3D-crosslinked nanoscale network structure possessing high degree of graphitization. When used as the electrode material in an electrochemical supercapacitor, the PCF samples verify their advantageous electrical conductivity, ion contact and electrochemical stability. The test results show that the sample prepared under 1000 W microwave power has good electrochemical performance. It displays the specific capacitance of 62.75 F/g at the current density of 2.0 A/g and retains 95% of its capacitance after 10,000 cycles at the current density of 2.0 A/g. Besides, its near-rectangular shape of the cyclic voltammograms (CV) curves exhibits typical character of an electric double-layer capacitor, which owns an enhanced ionic diffusion that can fit the requirements for energy storage applications.

  11. Thin CdS films prepared by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hiroshi Uda; Yonezawa, Hideo; Ohtsubo, Yoshikazu; Kosaka, Manabu; Sonomura, Hajimu [Kinki Univ., Osaka (Japan). Faculty of Science and Technology

    2003-01-01

    Polycrystalline CdS thin films have been deposited on borosilicate glass substrates coated with ITO film by metalorganic chemical vapor deposition using dimethyl cadmium and diethyl sulfide as source materials. The growth of CdS film occurred at substrate temperatures within the range of 280-360{sup o}C. The deposition rate increased with increasing VI/II molar ratio at any substrate temperature and showed a maximum value at the VI/II molar ratio of 4. The grain size of as-deposited CdS film prepared at substrate temperatures from 300{sup o}C to 360{sup o}C was about 0.1 {mu}m. The CdS films consist of hexagonal form with a preferential orientation of the (0 0 2) plane parallel to the substrate. Thin CdS film with high optical transmittance was prepared at 350{sup o}C with the VI/II molar ratio of 4. The CdS film deposited by MOCVD may be used as a window layer for CdS/CdTe solar cell.(author)

  12. H2-dependent attachment kinetics and shape evolution in chemical vapor deposition graphene growth

    Science.gov (United States)

    Meca, Esteban; Shenoy, Vivek B.; Lowengrub, John

    2017-09-01

    Experiments on graphene growth through chemical vapor deposition (CVD) involving methane (CH4) and hydrogen (H2) gases reveal a complex shape evolution and a non-monotonic dependence on the partial pressure of H2 ({{p}{{\\text{H}2}}} ). To explain these intriguing observations, we develop a microkinetic model for the stepwise decomposition of CH4 into mobile radicals and consider two possible mechanisms of attachment to graphene crystals: CH radicals to hydrogen-decorated edges of the crystals and C radicals to bare crystal edges. We derive an effective mass flux and an effective kinetic coefficient, both of which depend on {{p}{{\\text{H}2}}} , and incorporate these into a phase field model. The model reproduces both the non-monotonic dependence on {{p}{{\\text{H}2}}} and the characteristic shapes of graphene crystals observed in experiments. At small {{p}{{\\text{H}2}}} , growth is limited by the kinetics of attachment while at large {{p}{{\\text{H}2}}} growth is limited because the effective mass flux is small. We also derive a simple analytical model that captures the non-monotone behavior, enables the two mechanisms of attachment to be distinguished and provides guidelines for CVD growth of defect-free 2D crystals.

  13. Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zardo, I. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Conesa-Boj, S.; Estrade, S.; Peiro, F. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Yu, L.; Roca i Cabarrocas, P. [Ecole Polytechnique, CNRS, LPICM, Palaiseau (France); Morante, J.R. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Catalonia Institute for Energy Research, Barcelona, CAT (Spain); Arbiol, J. [Universitat de Barcelona, Departament d' Electronica, Barcelona, CAT (Spain); Institucio Catalana de Recerca i Estudis Avancats (ICREA) and Institut de Ciencia de Materials de Barcelona, CSIC, Bellaterra, CAT (Spain); Fontcuberta i.Morral, A. [Technische Universitaet Muenchen, Walter Schottky Institut and Physik Department, Garching (Germany); Ecole Polytechnique Federale de Lausanne, Laboratoire des Materiaux Semiconducteurs, Institut des Materiaux, Lausanne (Switzerland)

    2010-07-15

    Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the <111>, <112> or <001> growth direction. When growing on the <112> and <111> directions, they revealed a similar crystal quality and the presence of a high density of twins along the {l_brace}111{r_brace} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm{sup -1}, in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth. (orig.)

  14. Effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kwong, Philip; Seidel, Scott; Gupta, Malancha, E-mail: malanchg@usc.edu [Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, 925 Bloom Walk, Los Angeles, California 90089 (United States)

    2015-05-15

    In this work, the effect of transition metal salts on the initiated chemical vapor deposition of polymer thin films was studied using x-ray photoelectron spectroscopy. The polymerizations of 4-vinyl pyridine and 1H,1H,2H,2H-perfluorodecyl acrylate were studied using copper(II) chloride (CuCl{sub 2}) and iron(III) chloride (FeCl{sub 3}) as the transition metal salts. It was found that the surface coverages of both poly(4-vinyl pyridine) (P4VP) and poly(1H,1H,2H,2H-perfluorodecyl acrylate) were decreased on CuCl{sub 2}, while the surface coverage of only P4VP was decreased on FeCl{sub 3}. The decreased polymer surface coverage was found to be due to quenching of the propagating radicals by the salt, which led to a reduction of the oxidation state of the metal. The identification of this reaction mechanism allowed for tuning of the effectiveness of the salts to decrease the polymer surface coverage through the adjustment of processing parameters such as the filament temperature. Additionally, it was demonstrated that the ability of transition metal salts to decrease the polymer surface coverage could be extended to the fabrication of patterned cross-linked coatings, which is important for many practical applications such as sensors and microelectronics.

  15. Structure and photoluminescence of molybdenum selenide nanomaterials grown by hot filament chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wang, B.B. [College of Chemistry and Chemical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054 (China); Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhu, M.K. [College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124 (China); Ostrikov, K., E-mail: kostya.ostrikov@qut.edu.au [Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organization, P. O. Box 218, Lindfield, NSW 2070 (Australia); Institute for Future Environments, School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000 (Australia); Plasma Nanoscience, School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shao, R.W.; Zheng, K. [Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)

    2015-10-25

    Molybdenum selenide nanomaterials with different structures are synthesized on silicon substrates coated with gold films by hot filament chemical vapor deposition (HFCVD) in nitrogen environment, where molybdenum trioxide and selenium powders are used as source materials. The structure and composition of the synthesized molybdenum selenide nanomaterials are studied using field emission scanning electron microscopy, transmission electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy. The results indicate that the structures of molybdenum selenide change from nanoflakes to nanoparticles with the increase of content of molybdenum trioxide precursor. The photoluminescence (PL) excitation using the 325 nm line of He–Cd laser as the excitation source generates green light with the wavelength of about 512–516 nm. The formation of molybdenum selenide nanomaterials is determined by the decomposition rates of molybdenum trioxide in HFCVD. The possible factors that affect the generation of green PL bands are analyzed. These outcomes of this work enrich our knowledge on the synthesis of transition metal dichalcogenides and contribute to the development of applications of these materials in optoelectronic devices. - Highlights: • Molybdenum selenide nanoflakes, nanoparticles and hybrids produced by HFCVD. • Uncommon MoO{sub 3} and Se precursor co-location and mixing and effective MoO{sub 3} decomposition. • Morphology change from nanoflakes to nanoparticles with higher ratio of MoO{sub 3} precursor. • Strong photoluminescence emission of green light with a wavelength of ∼512–516 nm.

  16. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2.

    Science.gov (United States)

    Alharbi, Abdullah; Armstrong, Darren; Alharbi, Somayah; Shahrjerdi, Davood

    2017-11-27

    Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS2) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.

  17. Chemical vapor deposition growth of large grapheme single crystal from ethanol

    Science.gov (United States)

    Chen, Xiao; Zhao, Pei; Chiashi, Shohei; Maruyama, Shigeo

    2014-03-01

    Ethanol as a precursor has proven effective in the chemical vapor deposition (CVD) synthesis of graphene on both Ni foils and Cu capsule substrates. For applications of graphene in field effect transistors or as transparent conducting electrodes, larger singe-crystal graphene without any grain boundaries shows superior electrical performance and has attracted enormous interests. Here we report a protocol to synthesize large graphene single crystals (up to 600 μm) using ethanol as precursor on commercially-available polycrystalline Cu foils. We explored the mechanism by studying the influences of different growth parameters such as pressure, flow rate and temperature. Low partial pressure and low flow rate of ethanol is essential in achieving low nucleation density over the metal surface and therefore large graphene grains can be obtained. We found that growth temperature dramatically affects the crystallinity and the growth rate of graphene grains. Moreover, this CVD growth of large graphene single crystals involves no electro-polishing or annealing treatments to the metal surface, presenting a significant simplification to the current graphene synthesis process.

  18. TiOx thin films grown on Pd(100) and Pd(111) by chemical vapor deposition

    Science.gov (United States)

    Farstad, M. H.; Ragazzon, D.; Grönbeck, H.; Strømsheim, M. D.; Stavrakas, C.; Gustafson, J.; Sandell, A.; Borg, A.

    2016-07-01

    The growth of ultrathin TiOx (0≤x≤2) films on Pd(100) and Pd(111) surfaces by chemical vapor deposition (CVD), using Titanium(IV)isopropoxide (TTIP) as precursor, has been investigated by high resolution photoelectron spectroscopy, low energy electron diffraction and scanning tunneling microscopy. Three different TiOx phases and one Pd-Ti alloy phase have been identified for both surfaces. The Pd-Ti alloy phase is observed at the initial stages of film growth. Density functional theory (DFT) calculations for Pd(100) and Pd(111) suggest that Ti is alloyed into the second layer of the substrate. Increasing the TTIP dose yields a wetting layer comprising Ti2 + species (TiOx, x ∼0.75). On Pd(100), this phase exhibits a mixture of structures with (3 × 5) and (4 × 5) periodicity with respect to the Pd(100) substrate, while an incommensurate structure is formed on Pd(111). Most importantly, on both surfaces this phase consists of a zigzag pattern similar to observations on other reactive metal surfaces. Further increase in coverage results in growth of a fully oxidized (TiO2) phase on top of the partially oxidized layer. Preliminary investigations indicate that the fully oxidized phase on both Pd(100) and Pd(111) may be the TiO2(B) phase.

  19. Control of nanoparticle agglomeration through variation of the time-temperature profile in chemical vapor synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Djenadic, Ruzica; Winterer, Markus, E-mail: markus.winterer@uni-due.de [Universität Duisburg-Essen, Nanoparticle Process Technology, Faculty of Engineering and CENIDE (Germany)

    2017-02-15

    The influence of the time-temperature history on the characteristics of nanoparticles such as size, degree of agglomeration, or crystallinity is investigated for chemical vapor synthesis (CVS). A simple reaction-coagulation-sintering model is used to describe the CVS process, and the results of the model are compared to experimental data. Nanocrystalline titania is used as model material. Titania nanoparticles are generated from titanium-tetraisopropoxide (TTIP) in a hot-wall reactor. Pure anatase particles and mixtures of anatase, rutile (up to 11 vol.%), and brookite (up to 29 vol.%) with primary particle sizes from 1.7 nm to 10.5 nm and agglomerate particle sizes from 24.3 nm to 55.6 nm are formed depending on the particle time-temperature history. An inductively heated furnace with variable inductor geometry is used as a novel system to control the time-temperature profile in the reactor externally covering a large wall temperature range from 873 K to 2023 K. An appropriate choice of inductor geometry, i.e. time-temperature profile, can significantly reduce the degree of agglomeration. Other particle characteristics such as crystallinity are also substantially influenced by the time-temperature profile.

  20. Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

    Directory of Open Access Journals (Sweden)

    Sandipan Pramanik

    2013-09-01

    Full Text Available Current-perpendicular-to-plane (CPP magnetoresistance (MR effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG is grown on a metallic substrate by chemical vapor deposition (CVD. We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100% are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions.

  1. Layer-selective synthesis of bilayer graphene via chemical vapor deposition

    Science.gov (United States)

    Yang, Ning; Choi, Kyoungjun; Robertson, John; Park, Hyung Gyu

    2017-09-01

    A controlled synthesis of high-quality AB-stacked bilayer graphene by chemical vapor deposition demands a detailed understanding of the mechanism and kinetics. By decoupling the growth of the two layers via a growth-and-regrowth scheme, we report the kinetics and termination mechanisms of the bilayer graphene growth on copper. We observe, for the first time, that the secondary layer growth follows Gompertzian kinetics. Our observations affirm the postulate of a time-variant transition from a mass-transport-limited to a reaction-limited regimes and identify the mechanistic disparity between the monolayer growth and the secondary-layer expansion underneath the monolayer cover. It is the continuous carbon supply that drives the expansion of the graphene secondary layer, rather than the initially captured carbon amount, suggesting an essential role of the surface diffusion of reactant adsorbates in the interspace between the top graphene layer and the underneath copper surface. We anticipate that the layer selectivity of the growth relies on the entrance energetics of the adsorbed reactants to the graphene-copper interspace across the primary-layer edge, which could be engineered by tailoring the edge termination state. The temperature-reliant saturation area of the secondary-layer expansion is understood as a result of competitive attachment of carbon and hydrogen adatoms to the secondary-layer graphene edge.

  2. High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

    Science.gov (United States)

    Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

    2012-01-01

    Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

  3. Uniformly Distributed Graphene Domain Grows on Standing Copper via Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2013-01-01

    Full Text Available Uniformly distributed graphene domains were synthesized on standing copper foil by a low-pressure chemical vapor deposition system. This method improved the distribution of the graphene domains at different positions on the same piece of copper foil along the forward direction of the gas flow. Scanning electron microscopy (SEM showed the average size of the graphene domains to be about ~20 m. This results show that the sheet resistance of monolayer graphene on a polyethylene terephthalate (PET substrate is about ~359 /□ whereas that of the four-layer graphene films is about ~178 /□, with a transmittance value of 88.86% at the 550 nm wavelength. Furthermore, the sheet resistance can be reduced with the addition of HNO3 resulting in a value of 84 /□. These values meet the absolute standard for touch sensor applications, so we believe that this method can be a candidate for some transparent conductive electrode applications.

  4. Role of hydrogen in graphene chemical vapor deposition growth on a copper surface.

    Science.gov (United States)

    Zhang, Xiuyun; Wang, Lu; Xin, John; Yakobson, Boris I; Ding, Feng

    2014-02-26

    Synthesizing bilayer graphene (BLG), which has a band gap, is an important step in graphene application in microelectronics. Experimentally, it was broadly observed that hydrogen plays a crucial role in graphene chemical vapor deposition (CVD) growth on a copper surface. Here, by using ab initio calculations, we have revealed a crucial role of hydrogen in graphene CVD growth, terminating the graphene edges. Our study demonstrates the following. (i) At a low hydrogen pressure, the graphene edges are not passivated by H and thus tend to tightly attach to the catalyst surface. As a consequence, the diffusion of active C species into the area beneath the graphene top layer (GTL) is prohibited, and therefore, single-layer graphene growth is favored. (ii) At a high hydrogen pressure, the graphene edges tend to be terminated by H, and therefore, its detachment from the catalyst surface favors the diffusion of active C species into the area beneath the GTL to form the adlayer graphene below the GTL; as a result, the growth of BLG or few-layer graphene (FLG) is preferred. This insightful understanding reveals a crucial role of H in graphene CVD growth and paves a way for the controllable synthesis of BLG or FLG. Besides, this study also provides a reasonable explanation for the hydrogen pressure-dependent graphene CVD growth behaviors on a Cu surface.

  5. Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition.

    Science.gov (United States)

    Li, Xuesong; Colombo, Luigi; Ruoff, Rodney S

    2016-08-01

    Over the past decade, graphene has advanced rapidly as one of the most promising materials changing human life. Development of production-worthy synthetic methodologies for the preparation of various types of graphene forms the basis for its investigation and applications. Graphene can be used in the forms of either microflake powders or large-area thin films. Graphene powders are prepared by the exfoliation of graphite or the reduction of graphene oxide, while graphene films are prepared predominantly by chemical vapor deposition (CVD) on a variety of substrates. Both metal and dielectric substrates have been explored; while dielectric substrates are preferred over any other substrate, much higher quality graphene large-area films have been grown on metal substrates such as Cu. The focus here is on the progress of graphene synthesis on Cu foils by CVD, including various CVD techniques, graphene growth mechanisms and kinetics, strategies for synthesizing large-area graphene single crystals, graphene transfer techniques, and, finally, challenges and prospects are discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Chemical vapor deposition of high quality graphene films from carbon dioxide atmospheres.

    Science.gov (United States)

    Strudwick, Andrew James; Weber, Nils Eike; Schwab, Matthias Georg; Kettner, Michel; Weitz, R Thomas; Wünsch, Josef R; Müllen, Klaus; Sachdev, Hermann

    2015-01-27

    The realization of graphene-based, next-generation electronic applications essentially depends on a reproducible, large-scale production of graphene films via chemical vapor deposition (CVD). We demonstrate how key challenges such as uniformity and homogeneity of the copper metal substrate as well as the growth chemistry can be improved by the use of carbon dioxide and carbon dioxide enriched gas atmospheres. Our approach enables graphene film production protocols free of elemental hydrogen and provides graphene layers of superior quality compared to samples produced by conventional hydrogen/methane based CVD processes. The substrates and resulting graphene films were characterized by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and Raman microscopy, sheet resistance and transport measurements. The superior quality of the as-grown graphene films on copper is indicated by Raman maps revealing average G band widths as low as 18 ± 8 cm(-1) at 514.5 nm excitation. In addition, high charge carrier mobilities of up to 1975 cm(2)/(V s) were observed for electrons in transferred films obtained from a carbon dioxide based growth protocol. The enhanced graphene film quality can be explained by the mild oxidation properties of carbon dioxide, which at high temperatures enables an uniform conditioning of the substrates by an efficient removal of pre-existing and emerging carbon impurities and a continuous suppression and in situ etching of carbon of lesser quality being co-deposited during the CVD growth.

  7. One-step synthesis of chlorinated graphene by plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Liwei; Zhang, Hui; Zhang, Pingping; Sun, Xuhui, E-mail: xhsun@suda.edu.cn

    2015-08-30

    Highlights: • We developed a simple approach to synthesize the single layer chlorinated graphene. • CuCl{sub 2} on Cu surface is used as Cl source under the plasma treatment. • The formation of covalent C−Cl bond has been investigated by Raman and XPS. • Raman results indicate the p-type doping effect of chlorination. - Abstract: We developed an approach to synthesize the chlorinated single layer graphene (Cl-G) by one-step plasma enhanced chemical vapor deposition. Copper foil was simply treated with hydrochloric acid and then CuCl{sub 2} formed on the surface was used as Cl source under the assistance of plasma treatment. Compared with other two-step methods by post plasma/photochemical treatment of CVD-grown single layer graphene (SLG), one-step Cl-G synthesis approach is quite straightforward and effective. X-ray photoelectron spectroscopy (XPS) revealed that ∼2.45 atom% Cl remained in SLG. Compared with the pristine SLG, the obvious blue shifts of G band and 2D band along with the appearance of D’ band and D + G band in the Raman spectra indicate p-type doping of Cl-G.

  8. Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition.

    Science.gov (United States)

    Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

    2015-06-21

    We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.

  9. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  10. Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Sheng, Yuewen; Wang, Xiaochen; Fujisawa, Kazunori; Ying, Siqi; Elias, Ana Laura; Lin, Zhong; Xu, Wenshuo; Zhou, Yingqiu; Korsunsky, Alexander M; Bhaskaran, Harish; Terrones, Mauricio; Warner, Jamie H

    2017-05-03

    We show that hexagonal domains of monolayer tungsten disulfide (WS2) grown by chemical vapor deposition (CVD) with powder precursors can have discrete segmentation in their photoluminescence (PL) emission intensity, forming symmetric patterns with alternating bright and dark regions. Two-dimensional maps of the PL reveal significant reduction within the segments associated with the longest sides of the hexagonal domains. Analysis of the PL spectra shows differences in the exciton to trion ratio, indicating variations in the exciton recombination dynamics. Monolayers of WS2 hexagonal islands transferred to new substrates still exhibit this PL segmentation, ruling out local strain in the regions as the dominant cause. High-power laser irradiation causes preferential degradation of the bright segments by sulfur removal, indicating the presence of a more defective region that is higher in oxidative reactivity. Atomic force microscopy (AFM) images of topography and amplitude modes show uniform thickness of the WS2 domains and no signs of segmentation. However, AFM phase maps do show the same segmentation of the domain as the PL maps and indicate that it is caused by some kind of structural difference that we could not clearly identify. These results provide important insights into the spatially varying properties of these CVD-grown transition metal dichalcogenide materials, which may be important for their effective implementation in fast photo sensors and optical switches.

  11. Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

    2017-10-01

    High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

  12. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition.

    Science.gov (United States)

    Wu, Angjian; Li, Xiaodong; Yang, Jian; Du, Changming; Shen, Wangjun; Yan, Jianhua

    2017-10-12

    Vertical graphene (VG) sheets were single-step synthesized via inductively coupled plasma (ICP)-enhanced chemical vapor deposition (PECVD) using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H₂, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper temperature and H₂ concentration was indispensable for the synthesis of VG sheets. Rich defects of VG were formed with a high I D / I G ratio (1.29), consistent with the dense edges structure observed in electron microscopy. Additionally, the morphologies, crystalline degree, and wettability of nanostructure carbon induced by PECVD and ICP separately were comparatively analyzed. The present work demonstrated the potential of our PECVD recipe to synthesize VG from abundant natural waste oil, which paved the way to upgrade the low-value hydrocarbons into advanced carbon material.

  13. Upcycling Waste Lard Oil into Vertical Graphene Sheets by Inductively Coupled Plasma Assisted Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Angjian Wu

    2017-10-01

    Full Text Available Vertical graphene (VG sheets were single-step synthesized via inductively coupled plasma (ICP-enhanced chemical vapor deposition (PECVD using waste lard oil as a sustainable and economical carbon source. Interweaved few-layer VG sheets, H2, and other hydrocarbon gases were obtained after the decomposition of waste lard oil. The influence of parameters such as temperature, gas proportion, ICP power was investigated to tune the nanostructures of obtained VG, which indicated that a proper temperature and H2 concentration was indispensable for the synthesis of VG sheets. Rich defects of VG were formed with a high I D / I G ratio (1.29, consistent with the dense edges structure observed in electron microscopy. Additionally, the morphologies, crystalline degree, and wettability of nanostructure carbon induced by PECVD and ICP separately were comparatively analyzed. The present work demonstrated the potential of our PECVD recipe to synthesize VG from abundant natural waste oil, which paved the way to upgrade the low-value hydrocarbons into advanced carbon material.

  14. Modeling of Sheath Ion-Molecule Reactions in Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

    Science.gov (United States)

    Hash, David B.; Govindan, T. R.; Meyyappan, M.

    2004-01-01

    In many plasma simulations, ion-molecule reactions are modeled using ion energy independent reaction rate coefficients that are taken from low temperature selected-ion flow tube experiments. Only exothermic or nearly thermoneutral reactions are considered. This is appropriate for plasma applications such as high-density plasma sources in which sheaths are collisionless and ion temperatures 111 the bulk p!asma do not deviate significantly from the gas temperature. However, for applications at high pressure and large sheath voltages, this assumption does not hold as the sheaths are collisional and ions gain significant energy in the sheaths from Joule heating. Ion temperatures and thus reaction rates vary significantly across the discharge, and endothermic reactions become important in the sheaths. One such application is plasma enhanced chemical vapor deposition of carbon nanotubes in which dc discharges are struck at pressures between 1-20 Torr with applied voltages in the range of 500-700 V. The present work investigates The importance of the inclusion of ion energy dependent ion-molecule reaction rates and the role of collision induced dissociation in generating radicals from the feedstock used in carbon nanotube growth.

  15. Band gap engineering of chemical vapor deposited graphene by in situ BN doping.

    Science.gov (United States)

    Chang, Cheng-Kai; Kataria, Satender; Kuo, Chun-Chiang; Ganguly, Abhijit; Wang, Bo-Yao; Hwang, Jeong-Yuan; Huang, Kay-Jay; Yang, Wei-Hsun; Wang, Sheng-Bo; Chuang, Cheng-Hao; Chen, Mi; Huang, Ching-I; Pong, Way-Faung; Song, Ker-Jar; Chang, Shoou-Jinn; Guo, Jing-Hua; Tai, Yian; Tsujimoto, Masahiko; Isoda, Seiji; Chen, Chun-Wei; Chen, Li-Chyong; Chen, Kuei-Hsien

    2013-02-26

    Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.

  16. Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection.

    Science.gov (United States)

    Chang, Yung-Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu; Pu, Jiang; Chang, Jan-Kai; Hsu, Wei-Ting; Huang, Jing-Kai; Hsu, Chang-Lung; Chiu, Ming-Hui; Takenobu, Taishi; Li, Henan; Wu, Chih-I; Chang, Wen-Hao; Wee, Andrew Thye Shen; Li, Lain-Jong

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

  17. Composition and Morphology Control of Metal Dichalcogenides via Chemical Vapor Deposition for Photovoltaic and Nanoelectronic Applications

    Science.gov (United States)

    Samad, Leith L. J.

    The body of work reviewed here encompasses a variety of metal dichalcogenides all synthesized using chemical vapor deposition (CVD) for solar and electronics applications. The first reported phase-pure CVD synthesis of iron pyrite thin films is presented with detailed structural and electrochemical analysis. The phase-pure thin film and improved crystal growth on a metallic backing material represents one of the best options for potential solar applications using iron pyrite. Large tin-sulfur-selenide solid solution plates with tunable bandgaps were also synthesized via CVD as single-crystals with a thin film geometry. Solid solution tin-sulfur-selenide plates were demonstrated to be a new material for solar cells with the first observed solar conversion efficiencies up to 3.1%. Finally, a low temperature molybdenum disulfide vertical heterostructure CVD synthesis with layered controlled growth was achieved with preferential growth enabled by Van der Waals epitaxy. Through recognition of additional reaction parameters, a fully regulated CVD synthesis enabled the controlled growth of 1-6 molybdenum disulfide monolayers for nanoelectronic applications. The improvements in synthesis and materials presented here were all enabled by the control afforded by CVD such that advances in phase purity, growth, and composition control of several metal dichalcogenides were achieved. Further work will be able to take full advantage of these advances for future solar and electronics technologies.

  18. Ultraviolet-light-driven doping modulation in chemical vapor deposition grown graphene.

    Science.gov (United States)

    Iqbal, M Z; Iqbal, M W; Khan, M F; Eom, Jonghwa

    2015-08-28

    The tuning of charge carrier density of graphene is an essential factor to achieve the integration of high-efficiency electronic and optoelectronic devices. We demonstrate the reversible doping in graphene using deep ultraviolet (UV) irradiation and treatment with O2 and N2 gases. The Dirac point shift towards a positive gate voltage of chemical vapor deposition grown graphene field-effect transistors confirms the p-type doping, which is observed under UV irradiation and treatment with O2 gas, while it restores its pristine state after treatment with N2 gas under UV irradiation. The emergence of an additional peak in the X-ray photoelectron spectra during UV irradiation and treatment with O2 gas represents the oxidation of graphene, and the elimination of this peak during UV irradiation and treatment with N2 gas reveals the restoration of graphene in its pristine state. The shift in the G and 2D bands in Raman spectra towards higher and then lower wavenumber also suggests p-type doping and then reversible doping in graphene. The controlled doping and its reversibility in large area grown graphene offer a new vision for electronic applications.

  19. Substrate Effect on Plasma Clean Efficiency in Plasma Enhanced Chemical Vapor Deposition System

    Directory of Open Access Journals (Sweden)

    Shiu-Ko JangJian

    2007-01-01

    Full Text Available The plasma clean in a plasma-enhanced chemical vapor deposition (PECVD system plays an important role to ensure the same chamber condition after numerous film depositions. The periodic and applicable plasma clean in deposition chamber also increases wafer yield due to less defect produced during the deposition process. In this study, the plasma clean rate (PCR of silicon oxide is investigated after the silicon nitride deposited on Cu and silicon oxide substrates by remote plasma system (RPS, respectively. The experimental results show that the PCR drastically decreases with Cu substrate compared to that with silicon oxide substrate after numerous silicon nitride depositions. To understand the substrate effect on PCR, the surface element analysis and bonding configuration are executed by X-ray photoelectron spectroscopy (XPS. The high resolution inductively coupled plasma mass spectrometer (HR-ICP-MS is used to analyze microelement of metal ions on the surface of shower head in the PECVD chamber. According to Cu substrate, the results show that micro Cu ion and the CuOx bonding can be detected on the surface of shower head. The Cu ion contamination might grab the fluorine radicals produced by NF3 ddissociation in the RPS and that induces the drastic decrease on PCR.

  20. Selective Chemical Vapor Deposition Growth of Cubic FeGe Nanowires That Support Stabilized Magnetic Skyrmions.

    Science.gov (United States)

    Stolt, Matthew J; Li, Zi-An; Phillips, Brandon; Song, Dongsheng; Mathur, Nitish; Dunin-Borkowski, Rafal E; Jin, Song

    2017-01-11

    Magnetic skyrmions are topologically stable vortex-like spin structures that are promising for next generation information storage applications. Materials that host magnetic skyrmions, such as MnSi and FeGe with the noncentrosymmetric cubic B20 crystal structure, have been shown to stabilize skyrmions upon nanostructuring. Here, we report a chemical vapor deposition method to selectively grow nanowires (NWs) of cubic FeGe out of three possible FeGe polymorphs for the first time using finely ground particles of cubic FeGe as seeds. X-ray diffraction and transmission electron microscopy (TEM) confirm that these micron-length NWs with ∼100 nm to 1 μm diameters have the cubic B20 crystal structure. Although Fe 13 Ge 8 NWs are also formed, the two types of NWs can be readily differentiated by their faceting. Lorentz TEM imaging of the cubic FeGe NWs reveals a skyrmion lattice phase under small applied magnetic fields (∼0.1 T) at 233 K, a skyrmion chain state at lower temperatures (95 K) and under high magnetic fields (∼0.4 T), and a larger skyrmion stability window than bulk FeGe. This synthetic approach to cubic FeGe NWs that support stabilized skyrmions opens a route toward the exploration of new skyrmion physics and devices based on similar nanostructures.

  1. Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition.

    Science.gov (United States)

    Elibol, Kenan; Susi, Toma; O Brien, Maria; Bayer, Bernhard C; Pennycook, Timothy J; McEvoy, Niall; Duesberg, Georg S; Meyer, Jannik C; Kotakoski, Jani

    2017-01-26

    Molybdenum disulfide (MoS 2 ) is a particularly interesting member of the family of two-dimensional (2D) materials due to its semiconducting and tunable electronic properties. Currently, the most reliable method for obtaining high-quality industrial scale amounts of 2D materials is chemical vapor deposition (CVD), which results in polycrystalline samples. As grain boundaries (GBs) are intrinsic defect lines within CVD-grown 2D materials, their atomic structure is of paramount importance. Here, through atomic-scale analysis of micrometer-long GBs, we show that covalently bound boundaries in 2D MoS 2 tend to be decorated by nanopores. Such boundaries occur when differently oriented MoS 2 grains merge during growth, whereas the overlap of grains leads to boundaries with bilayer areas. Our results suggest that the nanopore formation is related to stress release in areas with a high concentration of dislocation cores at the grain boundaries, and that the interlayer interaction leads to intrinsic rippling at the overlap regions. This provides insights for the controlled fabrication of large-scale MoS 2 samples with desired structural properties for applications.

  2. Fabrication of Nanocarbon Composites Using In Situ Chemical Vapor Deposition and Their Applications.

    Science.gov (United States)

    He, Chunnian; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; Li, Jiajun

    2015-09-23

    Nanocarbon (carbon nanotubes (CNTs) and graphene (GN)) composites attract considerable research interest due to their fascinating applications in many fields. Here, recent developments in the field of in situ chemical vapor deposition (CVD) for the design and controlled preparation of advanced nanocarbon composites are highlighted, specifically, CNT-reinforced bulk structural composites, as well as CNT, GN, and CNT/GN functional composites, together with their practical and potential applications. In situ CVD is a very attractive approach for the fabrication of composites because of its engaging features, such as its simplicity, low-cost, versatility, and tunability. The morphologies, structures, dispersion, and interface of the resulting nanocarbon composites can be easily modulated by varying the experimental parameters (such as temperature, catalysts, carbon sources, templates or template catalysts, etc.), which enables a great potential for the in situ synthesis of high-quality nanocarbons with tailored size and dimension for constructing high-performance composites, which has not yet been achieved by conventional methods. In addition, new trends of the in situ CVD toward nanocarbon composites are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Tribological Property of C/C-SiC Composites Fabricated by Isothermal Chemical Vapor Infiltration

    Directory of Open Access Journals (Sweden)

    WANG Yueming

    2017-08-01

    Full Text Available Four kinds of C/C-SiC composites were fabricated by isothermal chemical vapor infiltration (ICVI, and the 2.5D needle-punching carbon felt was taken as the preform. The volume fraction of carbon fiber in felt is 30%. The density of C/C-SiC composites is similar (1.87-1.91 g/cm3, while the weight ratio of SiC is decreased from 56% to 15%. The microstructure and phase composition of C/C-SiC composites were observed by SEM and XRD respectively. Friction and wear behavior of the C/C-SiC composites were investigated with the MM-1000 friction machine. The results show that the average macro hardness of matrix is decreased from 98.2HRA to 65.1HRA with the decrease of SiC content from 56% to 15%, and uniformity of hardness distribution is significantly decreased. Finally, by the analysis of microtopography of friction surface and wear debris, it is found that the superficial hardness has an obvious influence on mechanism of wear during braking process. The wear mechanism of the C/C-SiC composites transforms from grain wear to the combination of grain wear and adherent wear with the decrease of surface hardness. At the same time, the average friction coefficient and mass wear rate is increased obviously during breaking process.

  4. Aspects of nitrogen surface chemistry relevant to TiN chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Schulberg, M.T.; Allendorf, M.D.; Outka, D.A.

    1996-08-01

    NH{sub 3} is an important component of many chemical vapor deposition (CVD) processes for TiN films, which are used for diffusion barriers and other applications in microelectronic circuits. In this study, the interaction of NH{sub 3} with TiN surfaces is examined with temperature programmed desorption (TPD) and Auger electron spectroscopy. NH{sub 3} has two adsorption states on TiN: a chemisorbed state and a multilayer state. A new method for analyzing TPD spectra in systems with slow pumping speeds yields activation energies for desorption for the two states of 24 kcal/mol and 7.3 kcal/mol, respectively. The sticking probability into the chemisorption state is {approximately}0.06. These results are discussed in the context of TiN CVD. In addition, the high temperature stability of TiN is investigated. TiN decomposes to its elements only after heating to 1300 K, showing that decomposition is unlikely to occur under CVD conditions.

  5. Optical spectroscopic characterization of amorphous germanium carbide materials obtained by X-Ray Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Paola Antoniotti

    2015-05-01

    Full Text Available Amorphous germanium carbides have been prepared by X-ray activated Chemical Vapor Deposition from germane/allene systems. The allene percentage and irradiation time (total dose were correlated to the composition, the structural features, and the optical coefficients of the films, as studied by IR and UV-VIS spectroscopic techniques. The materials composition is found to change depending on both the allene percentage in the mixture and the irradiation time. IR spectroscopy results indicate that the solids consist of randomly bound networks of carbon and germanium atoms with hydrogen atoms terminating all the dangling bonds. Moreover, the elemental analysis results, the absence of both unsaturated bonds and CH3 groups into the solids and the absence of allene autocondensation reactions products, indicate that polymerization reactions leading to mixed species, containing Ge-C bonds, are favored. Eopt values around 3.5 eV have been found in most of the cases, and are correlated with C sp3-bonding configuration. The B1/2 value, related to the order degree, has been found to be dependent on solid composition, atoms distribution in the material and hydrogenation degree of carbon atoms.

  6. Feasibility study of the microforming combined with selective chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Koshimizu Kazushi

    2015-01-01

    Full Text Available Microforming has been received much attention in the recent decades due to the wide use of microparts in electronics and medical applications. For the further functionalization of these micro devices, high functional surfaces with noble metals and nanomaterials are strongly required in bio- and medical fields, such as bio-sensors. To realize an efficient manufacturing process, which can deform the submillimeter scale bulk structure and can construct the micro to nanometer scale structures in one process, the present study proposes a combined process of microforming for metal foils with a selective chemical vapor deposition (SCVD on the active surfaces of the working material. To demonstrate feasibility of this proposed process, feasibility of SCVD of functional materials onto active surfaces of titanium (Ti was investigated. CVD of iron (Fe and carbon nanotubes (CNTs which construct CNTs on the patterned surfaces of the active Ti and non-active Ti oxidation layers were conducted. Ti thin films on silicon substrate and Fe were used as working materials and functional materials respectively. CNTs were grown only on the Ti surface. Consequently, selectivity of the active surface of Ti to the synthesis of Fe particles in CVD was confirmed.

  7. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane

    Science.gov (United States)

    Chan, Silvia H.; Keller, Stacia; Koksaldi, Onur S.; Gupta, Chirag; DenBaars, Steven P.; Mishra, Umesh K.

    2017-04-01

    The alloying of Al2O3 films with Si is a promising route to improve gate dielectric properties in Si- and wide-bandgap- based MOS devices. Here we present a comprehensive investigation of alloyed film growth by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum, disilane, and oxygen precursors over a variety of temperature and flow conditions. Binary growth rates of Al2O3 and SiO2 were evaluated to explain the aggregate growth kinetics of Si-alloyed Al2O3 films, and refractive indices were used to monitor Si incorporation efficiencies. The temperature dependence of the reaction rate of disilane with oxygen was found to be similar to that of trimethylaluminum and oxygen, leading to well-behaved deposition behavior in the kinetic and mass-transport controlled growth regimes. Compositional predictability and stability was achieved over a wider growth space with disilane-based growths as compared to previous work, which used silane as the Si precursor instead. In situ (Al,Si)O/n-GaN MOS gate stacks were grown and showed increasing reduction of net positive fixed charges with higher Si composition.

  8. Plasma-Assisted Mist Chemical Vapor Deposition of Zinc Oxide Films for Flexible Electronics

    Science.gov (United States)

    Takenaka, Kosuke; Uchida, Giichiro; Setsuhara, Yuichi

    2015-09-01

    Plasma-assisted mist chemical vapor deposition of ZnO films was performed for transparent conductive oxide formation of flexible electronics. In this study, ZnO films deposition using atmospheric-pressure He plasma generated by a micro-hollow cathode-type plasma source has been demonstrated. To obtain detail information according to generation of species in the plasma, the optical emission spectra of the atmospheric pressure He plasma with and without mist were measured. The result without mist shows considerable emissions of He lines, emissions attributed to the excitation and dissociation of air including N2 and O2 (N, O, and NO radials, and N2 molecule; N2 second positive band and first positive band), while the results with mist showed strong emissions attributed to the dissociation of H2O (OH and H radicals). The deposition of ZnO films was performed using atmospheric-pressure He plasma. The XRD patterns showed no crystallization of the ZnO films irradiated with pure He. On the other hand, the ZnO film crystallized with the irradiation with He/O2 mixture plasma. These results indicate that the atmospheric-pressure He/O2 mixture plasma has sufficient reactivity necessary for the crystallization of ZnO films at room temperature. This work was supported partly by The Grant-in-Aid for Scientific Research (KAKENHI) (Grant-in-Aid for Scientific Research(C)) from the Japan Society for the Promotion of Science (JSPS).

  9. Laser-assisted chemical vapor deposition setup for fast synthesis of graphene patterns

    Science.gov (United States)

    Zhang, Chentao; Zhang, Jianhuan; Lin, Kun; Huang, Yuanqing

    2017-05-01

    An automatic setup based on the laser-assisted chemical vapor deposition method has been developed for the rapid synthesis of graphene patterns. The key components of this setup include a laser beam control and focusing unit, a laser spot monitoring unit, and a vacuum and flow control unit. A laser beam with precision control of laser power is focused on the surface of a nickel foil substrate by the laser beam control and focusing unit for localized heating. A rapid heating and cooling process at the localized region is induced by the relative movement between the focalized laser spot and the nickel foil substrate, which causes the decomposing of gaseous hydrocarbon and the out-diffusing of excess carbon atoms to form graphene patterns on the laser scanning path. All the fabrication parameters that affect the quality and number of graphene layers, such as laser power, laser spot size, laser scanning speed, pressure of vacuum chamber, and flow rates of gases, can be precisely controlled and monitored during the preparation of graphene patterns. A simulation of temperature distribution was carried out via the finite element method, providing a scientific guidance for the regulation of temperature distribution during experiments. A multi-layer graphene ribbon with few defects was synthesized to verify its performance of the rapid growth of high-quality graphene patterns. Furthermore, this setup has potential applications in other laser-based graphene synthesis and processing.

  10. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Amani, Matin; Burke, Robert A; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

    2016-07-26

    One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5-10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.

  11. Chemical vapor deposition-prepared sub-nanometer Zr clusters on Pd surfaces: promotion of methane dry reforming.

    Science.gov (United States)

    Mayr, Lukas; Shi, Xue-Rong; Köpfle, Norbert; Milligan, Cory A; Zemlyanov, Dmitry Y; Knop-Gericke, Axel; Hävecker, Michael; Klötzer, Bernhard; Penner, Simon

    2016-11-23

    An inverse Pd-Zr model catalyst was prepared by chemical vapor deposition (CVD) using zirconium-t-butoxide (ZTB) as an organometallic precursor. Pd-Zr interaction was then investigated with focus on the correlation of reforming performance with the oxidation state of Zr. As test reactions, dry reforming of methane (DRM) and methanol steam reforming (MSR) were chosen. Depending on treatments, either ZrOxHy or ZrO2 overlayers or Zr as sub-nanometer clusters could be obtained. Following the adsorption of ZTB on Pd(111), a partially hydroxylated Zr4+-containing layer was formed, which can be reduced to metallic Zr by thermal annealing in ultrahigh vacuum, leading to redox-active Zr0 sub-nanometer clusters. Complementary density functional theoretical (DFT) calculations showed that a single layer of ZrO2 on Pd(111) can be more easily reduced toward the metallic state than a double- and triple layer. Also, the initial and resulting layer compositions greatly depend on gas environment. The lower the water background partial pressure, the faster and more complete the reduction of Zr4+ species to Zr0 on Pd takes place. Under methanol steam reforming conditions, water activation by hydroxylation of Zr occurs. In excess of methanol, strong coking is induced by the Pd/ZrOxHy interface. In contrast, dry reforming of methane is effectively promoted if these initially metallic Zr species are present in the pre-catalyst, leading to a Pd/ZrOxHy phase boundary by oxidative activation under reaction conditions. These reaction-induced active sites for DRM are stable with respect to carbon blocking or coking. In essence, Zr doping of Pd opens specific CO2 activation channels, which are absent on pure metallic Pd.

  12. Efficient copper vapor laser using metal (Cu, Ag) chlorides in thermal insulation and performance with new prism resonator configurations.

    Science.gov (United States)

    Singh, Bijendra

    2012-12-01

    A copper vapor laser based on the use of copper chloride and silver chloride mixture embedded inside the laser head thermal insulation is successfully demonstrated. The use of external HCl generator cell containing zirconium chloride normally used for its kinetically enhanced mode of operation is completely eliminated. With this new configuration laser power of ~70 W was achieved from a wide aperture ~47-50 mm bore discharge tube with input power of ~5 kW and overall high efficiency of ~1.4% without external supply of HCl vapors to the laser head. In a typical operational cycle the laser initially operates as low temperature CuCl laser with startup time of few minutes and output power of ~10 W during low tube temperature range of ~300-500 °C. Thereafter, the laser transforms itself into efficient kinetically enhanced copper vapor laser (CVL) at high temperature range of ~1200-1600 °C with maximum laser output power of ~70 W. This dual mode of operation observed in a single CVL system is unique and has not been reported so far in any high temperature copper vapor laser. New resonator configurations, namely, the prism resonator in stable and unstable form are successfully demonstrated for the first time in a copper vapor laser to achieve low divergence beam with dramatic increase in misalignment tolerance to ~25 mrad, which is an improvement of about ~50 times compared to standard CVLs with conventional spherical or plane-plane resonators. With these new resonator configurations the CVL functions almost as an "alignment free laser" system with significantly reduced beam divergence of ~0.2 mrad and high optical extraction efficiency of ~70%-80%.

  13. On the limits of detection of a chemical vapor plume in air using the schlieren optical method

    Science.gov (United States)

    Bigger, Rory; Settles, Gary

    2007-11-01

    A modest benchtop z-type schlieren optical system employing twin parabolic mirrors is characterized in terms of its sensitivity limit using the standard-lens method of calibration. A measurement by this method of the free-convection boundary layer on a heated vertical plate in air compares well with known theory. A mixing tube and oxygen sensor are then used to image laminar plumes of both helium and carbon dioxide in air at various mixture ratios, revealing a minimum value of the refractive-index gradient across the plume-air mixing boundary at its origin that is required for visibility. Thus the schlieren detection of a chemical vapor plume must depend upon the concentration of vapor in the air and the vapor refractive index. A range of chemicals is explored in order to determine the detectable concentration limit by this means. The results are discussed in terms of the possible use of schlieren optics to detect explosive vapor plumes in air.

  14. Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.

    Science.gov (United States)

    Yang, Zai-Xing; Liu, Lizhe; Yip, SenPo; Li, Dapan; Shen, Lifan; Zhou, Ziyao; Han, Ning; Hung, Tak Fu; Pun, Edwin Yue-Bun; Wu, Xinglong; Song, Aimin; Ho, Johnny C

    2017-04-25

    Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

  15. On-line coating of glass with tin oxide by atmospheric pressure chemical vapor deposition.

    Energy Technology Data Exchange (ETDEWEB)

    Allendorf, Mark D.; Sopko, J.F. (PPF Industries, Pittsburgh, PA); Houf, William G.; Chae, Yong Kee; McDaniel, Anthony H.; Li, M. (PPF Industries, Pittsburgh, PA); McCamy, J.W. (PPF Industries, Pittsburgh, PA)

    2006-11-01

    Atmospheric pressure chemical vapor deposition (APCVD) of tin oxide is a very important manufacturing technique used in the production of low-emissivity glass. It is also the primary method used to provide wear-resistant coatings on glass containers. The complexity of these systems, which involve chemical reactions in both the gas phase and on the deposition surface, as well as complex fluid dynamics, makes process optimization and design of new coating reactors a very difficult task. In 2001 the U.S. Dept. of Energy Industrial Technologies Program Glass Industry of the Future Team funded a project to address the need for more accurate data concerning the tin oxide APCVD process. This report presents a case study of on-line APCVD using organometallic precursors, which are the primary reactants used in industrial coating processes. Research staff at Sandia National Laboratories in Livermore, CA, and the PPG Industries Glass Technology Center in Pittsburgh, PA collaborated to produce this work. In this report, we describe a detailed investigation of the factors controlling the growth of tin oxide films. The report begins with a discussion of the basic elements of the deposition chemistry, including gas-phase thermochemistry of tin species and mechanisms of chemical reactions involved in the decomposition of tin precursors. These results provide the basis for experimental investigations in which tin oxide growth rates were measured as a function of all major process variables. The experiments focused on growth from monobutyltintrichloride (MBTC) since this is one of the two primary precursors used industrially. There are almost no reliable growth-rate data available for this precursor. Robust models describing the growth rate as a function of these variables are derived from modeling of these data. Finally, the results are used to conduct computational fluid dynamic simulations of both pilot- and full-scale coating reactors. As a result, general conclusions are

  16. Observation of interference effects via four photon excitation of highly excited Rydberg states in thermal cesium vapor

    CERN Document Server

    Kondo, Jorge M; Guttridge, Alex; Wade, Christopher G; De Melo, Natalia R; Adams, Charles S; Weatherill, Kevin J

    2015-01-01

    We report on the observation of Electromagnetically Induced Transparency (EIT) and Absorption (EIA) of highly-excited Rydberg states in thermal Cs vapor using a 4-step excitation scheme. The advantage of this 4-step scheme is that the final transition to the Rydberg state has a large dipole moment and one can achieve similar Rabi frequencies to 2 or 3 step excitation schemes using two orders of magnitude less laser power. Consequently each step is driven by a relatively low power infra-red diode laser opening up the prospect for new applications. The observed lineshapes are in good agreement with simulations based on multilevel optical Bloch equations.

  17. Chemical Vapor Deposition of Bi-Te-Ni-Fe on Magnesium Oxide Substrate and Its Seebeck Effect

    Directory of Open Access Journals (Sweden)

    Yong X. Gan

    2017-10-01

    Full Text Available In this work, a Bi-Te-Ni-Fe complex coating material was obtained on magnesium oxide substrate by a single step ambient pressure chemical vapor deposition (CVD. Nickel acetate, bismuth acetate, iron (III nitrate, and tellurium (IV chloride dissolved in N,N-dimethylformamide (DMF served as the metal sources for Ni, Bi, Fe, and Te, respectively. Hydrogen was used as the carrier gas. The substrate was kept at 500 °C in a quartz tube reaction chamber. The chemical vapor deposition time was two hours. Scanning electron microscopic observation revealed porous morphology of the deposited material with a needle-like submicron fine structure. These needle-like entities form networks with fairly uniform distribution on the substrate. Thermoelectric property test showed that the coating is p-type with a Seebeck coefficient of 179 µV/K. Time-dependent potential data were obtained to show the sensitivity of the Seebeck effect to temperature changes.

  18. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  19. Characterization of Plasma Enhanced Chemical Vapor Deposition-Physical Vapor Deposition transparent deposits on textiles to trigger various antimicrobial properties to food industry textiles

    Energy Technology Data Exchange (ETDEWEB)

    Brunon, Celine [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Chadeau, Elise; Oulahal, Nadia [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Grossiord, Carol [Science et Surface, 64, Chemin des Mouilles, F-69130 Ecully (France); Dubost, Laurent [HEF, ZI SUD, Rue Benoit Fourneyron, F-42166 Andrezieux Boutheon (France); Bessueille, Francois [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France); Simon, Farida [TDV Industrie, 43 Rue du Bas des Bois, BP 121, F-53012 Laval Cedex (France); Degraeve, Pascal [Universite de Lyon, Universite Lyon 1, Laboratoire de Recherche en Genie Industriel Alimentaire (LRGIA, E.A. 3733), Rue Henri de Boissieu, F-01000 Bourg en Bresse (France); Leonard, Didier, E-mail: didier.leonard@univ-lyon1.fr [Universite de Lyon, Universite Lyon 1, Laboratoire des Sciences Analytiques (LSA), CNRS, UMR 5180, Bat. J. Raulin 5eme etage, F-69622 Villeurbanne Cedex (France)

    2011-07-01

    Textiles for the food industry were treated with an original deposition technique based on a combination of Plasma Enhanced Chemical Vapor Deposition and Physical Vapor Deposition to obtain nanometer size silver clusters incorporated into a SiOCH matrix. The optimization of plasma deposition parameters (gas mixture, pressure, and power) was focused on textile transparency and antimicrobial properties and was based on the study of both surface and depth composition (X-ray Photoelectron Spectroscopy (XPS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), as well as Transmission Electron Microscopy, Atomic Force Microscopy, SIMS depth profiling and XPS depth profiling on treated glass slides). Deposition conditions were identified in order to obtain a variable and controlled quantity of {approx} 10 nm size silver particles at the surface and inside of coatings exhibiting acceptable transparency properties. Microbiological characterization indicated that the surface variable silver content as calculated from XPS and ToF-SIMS data directly influences the level of antimicrobial activity.

  20. Selective growth of graphene in layer-by-layer via chemical vapor deposition

    Science.gov (United States)

    Park, Jaehyun; An, Hyosub; Choi, Dong-Chul; Hussain, Sajjad; Song, Wooseok; An, Ki-Seok; Lee, Won-Jun; Lee, Naesung; Lee, Wan-Gyu; Jung, Jongwan

    2016-07-01

    Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (~40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene

  1. Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

    Science.gov (United States)

    Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

    2017-12-01

    Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

  2. In Situ Infrared Spectroscopy of the Gaseous Species Present in a Diamond Chemical Vapor Deposition System

    Science.gov (United States)

    Morell, G.; Weiner, B. R.

    1998-01-01

    We interfaced a Hot-Filament Chemical Vapor Deposition (HFCVD) system to the emission port of an FT-IR spectrometer, in order to study the gas phase species present during the deposition of diamond thin films. The implementation of the infrared (IR) emission technique in situ allowed the study of various carbon-containing species believed to be crucial in diamond film growth. The two IR-active vibrational fundamentals of methane, v(3)(f2) and v(4)(f2), were observed at three different filament temperatures: 1000, 1500 and 2000 C. However, the net signal of v(3) was emission, while that of v(4) was absorption. These results indicate that the v(4) fundamental is excited beyond equilibrium, while the v(3) fundamental remains mostly in the ground state. This is due to the small concentration of methane, the low energy of v(4) compared to v(3) or to the Hz vibrational mode, and symmetry considerations that forbid interaction among the four fundamentals of methane. Thus, the excitation of v(3) is more likely than its decay under HFCVD conditions, producing a non-equilibrium population. At a filament temperature of 2000 C, the v(3) (sigma(+)(3)) fundamental of acetylene and a band at 1328 cm-l also ascribed to acetylene (v5 (pi(U)) + v4) appear in net absorption. This correlates well with the onset of molecular hydrogen breaking by the filament, which occurs at temperatures around 2000 C and above. The hydrogen atoms produced in this heterogeneous reaction give rise to a chain of reactions that lead to acetylene, among other carbonaceous species.

  3. Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bartlome, Richard, E-mail: richard.bartlome@alumni.ethz.ch; De Wolf, Stefaan; Demaurex, Bénédicte; Ballif, Christophe [Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue de la Maladière 71b, 2000 Neuchâtel (Switzerland); Amanatides, Eleftherios; Mataras, Dimitrios [University of Patras, Department of Chemical Engineering, Plasma Technology Laboratory, P.O. Box 1407, 26504 Patras (Greece)

    2015-05-28

    We clarify the difference between the SiH{sub 4} consumption efficiency η and the SiH{sub 4} depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, η is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH{sub 4} consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure η as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH{sub 4} concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases η and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases η and favors the formation of powder. Unlike η, D is a location-dependent quantity. It is related to the SiH{sub 4} concentration in the plasma c{sub p}, and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH{sub 4} density measurements throughout the ignition and the termination of a plasma.

  4. Studies in graphene growth and processing using atmospheric pressure chemical vapor deposition

    Science.gov (United States)

    Merrell, Andrew Nephi

    This dissertation focuses on graphene, a promising two-dimensional, carbon material with many favorable electronic properties. The prospect of implementing graphene into a wide variety of potential device applications is enticing, but many factors stand in the way before this goal is realized. Atmospheric pressure chemical vapor deposition (APCVD) is a graphene production method that may be compatible with large-scale growth. Motivated by the need to more fully understand APCVD growth of graphene, a system is constructed, and several studies are carried out. Specifically, a detailed study is presented which involves the effects of hydrogen and contaminant oxygen in APCVD-grown graphene. The research shows that hydrogen is an important factor to control during the cooling stage of APCVD, as it has a direct effect on the formation of oxides on the copper foil (copper is used as the catalyst for graphene growth in APCVD). It is also determined that hydrogen, as well as the reaction chamber, play an important role in the formation of SiO2 nanoparticles, which accumulate on the copper surface during graphene growth. Methods for patterning and processing graphene are also explored in this dissertation, as such methods are crucial in the realization of graphene-based devices. The method of e-beam assisted metal deposition used in conjunction with masked-CVD growth is proposed as an effective alternative to conventional processing methods such as photolithography and electron-beam lithography. The proposed methods have several advantages, which pave the way for lowering graphene/metal contact resistance, and preserving the intrinsic properties of graphene during device fabrication.

  5. Automation of a remote plasma-enhanced chemical vapor deposition system using LabVIEW

    Science.gov (United States)

    Sharma, Rajan; Fretwell, John L.; Vaihinger, Jochen; Banerjee, Sanjay K.

    1997-08-01

    The remote plasma-enhanced chemical vapor deposition (RPCVD) system is an experimental low temperature Si/Si-Ge epitaxy system. This paper describes an integrated hardware/software automation package developed for the RPCVD system. Aspects of the system controlled by the package include pneumatic gas valves, mass flow controllers (MFCs), and a temperature controller. The package was developed on an Apple Quadra 950 platform using LabVIEWTM 3.1 and associated data acquisition and control hardware supplied by National Instruments and other vendors. The software interface allows the user to operate the system through a virtual control panel which displays critical system parameters such as chamber pressure, chamber temperature and gas flow rates, along with the states of the gas valves and the MFCs. The system can also be run in the recipe mode, in which a sequence of steps are read in from an ExcelTM file. A simulation routine scans each recipe for possible errors such as violation of valve interlocks while the recipe is being loaded. All actions, whether in the manual mode or the recipe mode, are recorded in a log file. Finally, since many of the gases used in the RPCVD process are toxic and/or flammable, there is an emphasis on safety in the entire control scheme. A safety monitor routine constantly checks for valve interlocks and pressure-valve interlocks. Upon detecting an illegal state, it automatically takes necessary action to bring the system into a safe state. In addition to these software safety features, there are also hardware interlocks to deal with such situations as power outages.

  6. Chemical vapor deposition on chabazite (CHA) zeolite membranes for effective post-combustion CO2 capture.

    Science.gov (United States)

    Kim, Eunjoo; Lee, Taehee; Kim, Hyungmin; Jung, Won-Jin; Han, Doug-Young; Baik, Hionsuck; Choi, Nakwon; Choi, Jungkyu

    2014-12-16

    Chabazite (CHA) zeolites with a pore size of 0.37 × 0.42 nm(2) are expected to separate CO2 (0.33 nm) from larger N2 (0.364 nm) in postcombustion flue gases by recognizing their minute size differences. Furthermore, the hydrophobic siliceous constituent in CHA membranes can allow for maintaining the CO2/N2 separation performance in the presence of H2O in contrast with the CO2 affinity-based membranes. In an attempt to increase the molecular sieving ability, the pore mouth size of all silica CHA (Si-CHA) particles was reduced via the chemical vapor deposition (CVD) of a silica precursor (tetraethyl orthosilicate). Accordingly, an increase of the CVD treatment duration decreased the penetration rate of CO2 into the CVD-treated Si-CHA particles. Furthermore, the CVD process was applied to siliceous CHA membranes in order to improve their CO2/N2 separation performance. Compared to the intact CHA membranes, the CO2/N2 maximum separation factor (max SF) for CVD-treated CHA membranes was increased by ∼ 2 fold under dry conditions. More desirably, the CO2/N2 max SF was increased by ∼ 3 fold under wet conditions at ∼ 50 °C, a representative temperature of the flue gas stream. In fact, the presence of H2O in the feed disfavored the permeation of N2 more than that of CO2 through CVD-modified CHA membranes and thus, contributed to the increased CO2/N2 separation factor.

  7. Structure and properties of braided sleeve preforms for chemical vapor infiltration

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.; Fiadzo, O.G.; Hablutzel, N. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Materials Science and Technology

    1998-04-01

    In all composites the properties and structure of the reinforcement strongly influence the performance of the material. For some composites, however, the reinforcement also affects the fabrication process itself exerting an additional, second order influence on performance. This is the case for the chemical vapor infiltration (CVI) process for fabrication of ceramic matrix composites. In this process the matrix forms progressively as a solid deposit, first onto the fiber surfaces, then onto the previous layer of deposit, ultimately growing to fill the inter-fiber porosity. The transport of reactants to the surfaces and the evolved morphology of the matrix depend on the initial reinforcement structure. This structure can vary greatly and is controlled by such factors as fiber size and cross-section, the number of filaments and amount of twist per tow or yarn, and the weave or braid architecture. Often the choice of reinforcement is based on mechanical performance analysis or on the cost and availability of the material or on the temperature stability of the fiber. Given this choice, the composite densification process--CVI--must be optimized to attain a successful material. Ceramic fiber in the form of cylindrical braided sleeve is an attractive choice for fabrication of tube-form ceramic matrix composites. Multiple, concentric layers of sleeve can be placed over a tubular mandrel, compressed and fixed with a binder to form a freestanding tube preform. This fiber architecture is different than that created by layup of plain weave cloth--the material used in most previous CVI development. This report presents the results of the investigation of CVI densification of braided sleeve preforms and the evolution of their structure and transport properties during processing.

  8. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Takahiro [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan); Kawaharamura, Toshiyuki [Research Institute, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); School of Systems Engineering, Kochi University of Technology, Kami, Kochi 780-8502 (Japan); Fujita, Shizuo, E-mail: fujitasz@kuee.kyoto-u.ac.jp [Photonics and Electronics Science and Engineering Center, Kyoto University, Katsura, Nishikyo-ku, Kyoto 615-8520 (Japan); Orita, Hiroyuki [New Energy and Environmental Business Division, Toshiba Mitsubishi-Electric Industrial Systems Corporation, Kobe International Business Center (KIBC) 509, 5-5-2 Minatojima-Minami, Chuo-Ku, Kobe 650-0047 (Japan)

    2015-12-31

    Atmospheric pressure mist chemical vapor deposition (Mist–CVD) systems have been developed to grow zinc-oxide-based (ZnO-based) transparent conductive oxide (TCO) films. Low-resistive aluminum-doped ZnO (AZO) TCOs, showing resistivity of the order on 10{sup −4} Ωcm, previously were grown using a safe source material zinc acetate [Zn(ac){sub 2}], at a growth temperature as high as 500 °C. To grow superior TCOs at lower temperatures, we proposed the addition of NH{sub 3} to accelerate the reaction of acetylacetonate compounds. As the result, we could grow gallium-doped ZnO (GZO) TCOs with a resistivity of 2.7 × 10{sup −3} Ω cm and transmittance higher than 90% at 300 °C by using zinc acetylacetonate [Zn(acac){sub 2}] as the Zn source. To grow boron-doped ZnO (BZO) TCOs at a lower growth temperature of 200 °C, we used boron doping along with a toluene solution of diethylzinc (DEZ), that maintained high reactivity without being flammable. These BZO TCOs showed a resistivity of 1.5 × 10{sup −3} Ω cm and transmittance higher than 90%, despite the use of a non-vacuum-based open-air technology. - Highlights: • Introduction of Mist–CVD as a non-vacuum-based, safe, and cost-effective growth technology • Process evolution of the growth technology to lower the growth temperature. • Achievement of low resistive ZnO films at 200oC.

  9. Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wintrebert-Fouquet, M.; Butcher, K.S.A.; Chen, P.P.T. [Physics Department, Macquarie University, Sydney, NSW 2109 (Australia); Wuhrer, R. [Microstructural Analysis Unit, Faculty of Science, University of Technology, Sydney, Broadway, NSW 2007 (Australia)

    2007-06-15

    Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 C for GaN and between 350 and 570 C for InN on different substrates. For GaN vast improvements in film morphology and quality have resulted from reductions in background impurities when compared to previous reports. Epitaxial material can now be grown at 650 C under optimized growth conditions. Columnar growth still occurs for growth on some substrates, however film coalescence is observed when using appropriate buffer layers and epitaxial growth can also be observed. High resolution SEM images show examples of this. The root-mean-square surface roughness of epitaxial samples, as measured using atomic force microscopy, shows values of as little as 10 Angstroms. While X-ray diffraction shows that these surfaces are not amorphous but have a strong (0001) preferred axis with FWHM limited by instrumental effects to (2{theta}) 0.085 degrees. The improvement in film quality has allowed heavily doped n-type films to be grown with an electron mobility of 160 cm{sup 2}/V.s for a carrier concentration of {proportional_to}1 x 10{sup 19} cm{sup -3} at 650 C. Moss-Burstein shifted absorption data confirms the high doping level. For InN film growth by RPECVD, columnar growth is commonly observed in the temperature region of interest for films grown directly on sapphire, however film coalescence and epitaxial films are also observed for this material. X-ray diffraction indicates very sharp (0002) peaks with FWHM of (2{theta}) 0.07 degrees. High resolution SEM images show examples of film morphology at different growth temperatures. Electron backscattered diffraction images indicate a wurtzite structure even for InN films with strong deviations from the accepted lattice parameters. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Chemical Vapor Deposition Growth. Final Report, December 29, 1975 -- August 31, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

    1978-10-01

    The objective of this study was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array (LSSA) Project. The results of 20 months of experimental work are summarized. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures by OCLI, using impurity diffusion and other standard and near-standard processing techniques, supplemented late in the program by the in situ CVD growth of n exp + /p/p exp + sheet structures subsquently processed into experimental cells. The principal CVD process used was silane (SiH sub 4 ) pyrolysis, although a few experiments were done with the dichlorosilane (SiH sub 2 Cl sub 2 ) process for Si deposition. The evaluation of various possiblesubstrate materials, the CVD parameter investigations, and the experimental solar cell fabrication and characterization are described in considerable detail. Specific conclusions of the work are discussed, and recommendations for continued investigations in certain areas are given.

  11. Integration of polytetrafluoroethylene low-k dielectric material in a chemical vapor deposited aluminum metallization scheme

    Science.gov (United States)

    Wickland, Heidi Lee

    In order to increase speed and functionality, computer chip technology continues its evolution towards higher device density and reduced feature size. As interconnect signal delay has become prohibitively high for traditional Al/SiO2 architectures, there is a pressing need to pursue integration of low-k materials into back-end-of-the-line interconnect architectures. To this end, polytetrafluoroethylene (PTFE) was integrated with aluminum, implementing titanium nitride as a barrier layer. SPEEDFILM, a version of PTFE, has a low dielectric constant of 1.9--2.0. With the use of an adhesion promoter, SPEEDFILM can be easily spun-cast onto patterned aluminum substrates, allowing for implementation into existing interconnect process flows. CVD aluminum/PVD TiN binary stacks have been successfully grown on spin-cast films of PTFE. Elemental analysis revealed compositionally pure aluminum, showing virtually no fluorine contamination in as-deposited and annealed binary stacks, and resistivity as low as 3.2 muO-cm have been obtained. Thermal annealing studies indicate titanium nitride is an effective barrier against thermally-driven fluorine diffusion from PTFE. A fabrication flow for a two-level Al/PTFE test structure was identified in order to examine key integration issues and produce an electrically testable demonstration vehicle. Many integration milestones have been met. In particular, XPS studies of plasma-treated PTFE surfaces demonstrated that an NH3 plasma can defluorinate the PTFE surface, allowing sufficient adhesion of a subsequently-deposited SiO2 cap to survive chemical-mechanical polishing. First pass work also indicated promising etching and photoresist stripping results of SiO2/PTFE stacks, which are designed for use at the via level of this two-level structure. This is a particularly useful result since low-k dielectrics are often difficult to pattern due to their degradation upon exposure to traditional photoresist stripping chemistries. Finally, in

  12. Acetylated rice starches films with different levels of amylose: Mechanical, water vapor barrier, thermal, and biodegradability properties.

    Science.gov (United States)

    Colussi, Rosana; Pinto, Vânia Zanella; El Halal, Shanise Lisie Mello; Biduski, Bárbara; Prietto, Luciana; Castilhos, Danilo Dufech; Zavareze, Elessandra da Rosa; Dias, Alvaro Renato Guerra

    2017-04-15

    Biodegradable films from native or acetylated starches with different amylose levels were prepared. The films were characterized according to the mechanical, water vapor barrier, thermal, and biodegradability properties. The films from acetylated high amylose starches had higher moisture content and water solubility than the native high amylose starch film. However, the acetylation did not affect acid solubility of the films, regardless of the amylose content. Films made from high and medium amylose rice starches were obtained; however low amylose rice starches, whether native or acetylated, did not form films with desirable characteristics. The acetylation decreased the tensile strength and increased the elongation of the films. The acetylated starch-based films had a lower decomposition temperature and higher thermal stability than native starch films. Acetylated starches films exhibited more rapid degradation as compared with the native starches films. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Thermal and chemical freeze-out in spectator fragmentation

    Science.gov (United States)

    Trautmann, W.; Bassini, R.; Begemann-Blaich, M.; Ferrero, A.; Fritz, S.; Gaff-Ejakov, S. J.; Groß, C.; Immé, G.; Iori, I.; Kleinevoß, U.; Kunde, G. J.; Kunze, W. D.; Fèvre, A. Le; Lindenstruth, V.; Łukasik, J.; Lynen, U.; Maddalena, V.; Mahi, M.; Möhlenkamp, T.; Moroni, A.; Müller, W. F. J.; Nociforo, C.; Ocker, B.; Odeh, T.; Orth, H.; Petruzzelli, F.; Pochodzalla, J.; Raciti, G.; Riccobene, G.; Romano, F. P.; Rubehn, Th.; Saija, A.; Sann, H.; Schnittker, M.; Schüttauf, A.; Schwarz, C.; Seidel, W.; Serfling, V.; Sfienti, C.; Trzciński, A.; Tucholski, A.; Verde, G.; Wörner, A.; Xi, Hongfei; Zwiegliński, B.

    2007-12-01

    Isotope temperatures from double ratios of hydrogen, helium, lithium, beryllium, and carbon isotopic yields, and excited-state temperatures from yield ratios of particle-unstable resonances in He4, Li5, and Be8, were determined for spectator fragmentation, following collisions of Au197 with targets ranging from C to Au at incident energies of 600 and 1000 MeV per nucleon. A deviation of the isotopic from the excited-state temperatures is observed which coincides with the transition from residue formation to multi-fragment production, suggesting a chemical freeze-out prior to thermal freeze-out in bulk disintegrations.

  14. Extremely Cost-Effective and Efficient Solar Vapor Generation under Nonconcentrated Illumination Using Thermally Isolated Black Paper.

    Science.gov (United States)

    Liu, Zhejun; Song, Haomin; Ji, Dengxin; Li, Chenyu; Cheney, Alec; Liu, Youhai; Zhang, Nan; Zeng, Xie; Chen, Borui; Gao, Jun; Li, Yuesheng; Liu, Xiang; Aga, Diana; Jiang, Suhua; Yu, Zongfu; Gan, Qiaoqiang

    2017-02-27

    Passive solar vapor generation represents a promising and environmentally benign method of water purification/desalination. However, conventional solar steam generation techniques usually rely on costly and cumbersome optical concentration systems and have relatively low efficiency due to bulk heating of the entire liquid volume. Here, an efficient strategy using extremely low-cost materials, i.e., carbon black (powder), hydrophilic porous paper, and expanded polystyrene foam is reported. Due to the excellent thermal insulation between the surface liquid and the bulk volume of the water and the suppressed radiative and convective losses from the absorber surface to the adjacent heated vapor, a record thermal efficiency of ≈88% is obtained under 1 sun without concentration, corresponding to the evaporation rate of 1.28 kg (m2 h)-1. When scaled up to a 100 cm2 array in a portable solar water still system and placed in an outdoor environment, the freshwater generation rate is 2.4 times of that of a leading commercial product. By simultaneously addressing both the need for high-efficiency operation as well as production cost limitations, this system can provide an approach for individuals to purify water for personal needs, which is particularly suitable for undeveloped regions with limited/no access to electricity.

  15. Chemical Characterization and Thermal Stressing Studies of Perfluorohexane Fluids for Space-Based Applications

    Science.gov (United States)

    Arnold, William A.; Hartman, Thomas G.; McQuillen, John

    2006-01-01

    Perfluorohexane (PFH), C6F14, is a perfluorocarbon fluid. Several PFH fluids with different isomer concentrations were evaluated for use in an upcoming NASA space experiment. Samples tested included two commercially obtained high-purity n-perfluorohexane (n-PFH) fluids and a technical grade mixture of C6F14 branched and linear isomers (FC-72(TradeMark)). These fluids were evaluated for exact chemical composition, impurity purity and high temperature degradation behavior (pyrolysis). Our investigation involved simulated thermal stressing studies of PFH fluids under conditions likely to occur in the event of an atmospheric breach within the International Space Station (ISS) and subsequent exposure of the vapors to the high temperature and catalyst present in its Trace Contaminant Control Subsystem (TCCS). Exposure to temperatures in the temperature range of 200-450 C in an inert or oxidizing atmosphere, with and without the presence of catalyst was investigated. The most aggressive conditions studied were exposure of PFH vapors to 450 C in air and in the presence of TCCS (palladium) catalyst. Gas chromatography-mass spectrometry (GC-MS) and gas chromatography (GC) analyses were conducted on the perfluorohexane samples before and after pyrolysis. The FC-72 and n-PFH samples showed no significant degradation following pyrolysis even under the most aggressive study conditions. Some trace level impurities associated with the PFH samples such as linear perfluorocarbon monohydrides or monoiodides were destroyed by pyrolysis at the upper limit. Other trace level impurities such as olefinic or cycloolefinic perfluorocarbons were converted into oxidation products by pyrolysis. The purity of PFH following pyrolysis actually increased slightly as a consequence since these trace contaminants were effectively scrubbed from the samples. However, since the initial concentrations of the thermally-impacted impurities were so low, the net effect was trivial. A potential byproduct of

  16. Carbon nanotube synthesis via the catalytic chemical vapor deposition of methane in the presence of iron, molybdenum, and iron-molybdenum alloy thin layer catalysts

    Science.gov (United States)

    Yahyazadeh, Arash; Khoshandam, Behnam

    In this study, we documented the catalytic chemical vapor deposition synthesis of carbon nanotubes (CNTs) using ferrocene and molybdenum hexacarbonyl as catalyst nanoparticle precursors and methane as a nontoxic and economical carbon source for the first time. Field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, wavelength dispersive X-ray spectrometry and transmission electron microscopy of the thin layer catalyst as a simple and cost effective catalyst preparation after methane decomposition reaction, along with Fourier transform infrared spectroscopy and Raman spectroscopy confirmed the growth of CNTs, from bimetallic nanoparticles, which are converted into iron-molybdenum alloy nanoparticles at 700 °C for pretreatment by hydrogen after chemical vapor deposition of thin layers. An investigation of the weight percentages of the chemical elements present in the CNTs synthesized from iron-molybdenum catalyst using quartz sheet substrate at 750 °C, confirmed a significant carbon yield of 75.4% which represents high catalyst activity. Additionally, multi-walled carbon nanotubes (∼16-55 nm in diameter and 1.2 μm in length) were observed in the iron-molybdenum alloy sample after methane decomposition reaction at 750 °C for 35 min. To show the role of iron and molybdenum coated on silicon substrate as two thin layer catalysts, samples were considered for CNTs growth (diameter ∼47-69 nm) at 800 °C and 830 °C, respectively. Moreover, the effect of hydrogen pretreatment was evaluated in terms of active metal coating properly. The best graphitic structure due to Raman spectroscopy outcomes (ID/IG ratio) was obtained for iron coated on a quartz sheet, which was estimated at 0.8505. Thermogravimetric analysis proved the thermal stability of the synthesized CNTs using iron thin-layer catalyst up to 350 °C.

  17. Control of lithium-t-butoxide addition during chemical vapor deposition of Li-doped diamond films by optical emission spectroscopy

    OpenAIRE

    Schreck, Matthias

    1999-01-01

    Control of lithium-t-butoxide addition during chemical vapor deposition of Li-doped diamond films by optical emission spectroscopy / B. Stritzker ... – In: Physica status solidi. A. 174. 1999. S. 65-72

  18. Analysis of Thermally Denatured Depth in Laser Vaporization for Benign Prostatic Hyperplasia using a Simulation of Light Propagation and Heat Transfer (secondary publication)

    Science.gov (United States)

    Takada, Junya; Honda, Norihiro; Hazama, Hisanao; Ioritani, Naomasa

    2016-01-01

    Background and Aims: Laser vaporization of the prostate is expected as a less invasive treatment for benign prostatic hyperplasia (BPH), via the photothermal effect. In order to develop safer and more effective laser vaporization of the prostate, it is essential to set optimal irradiation parameters based on quantitative evaluation of temperature distribution and thermally denatured depth in prostate tissue. Method: A simulation model was therefore devised with light propagation and heat transfer calculation, and the vaporized and thermally denatured depths were estimated by the simulation model. Results: The results of the simulation were compared with those of an ex vivo experiment and clinical trial. Based on the accumulated data, the vaporized depth strongly depended on the distance between the optical fiber and the prostate tissue, and it was suggested that contact laser irradiation could vaporize the prostate tissue most effectively. Additionally, it was suggested by analyzing thermally denatured depth comprehensively that laser irradiation at the distance of 3 mm between the optical fiber and the prostate tissue was useful for hemostasis. Conclusions: This study enabled quantitative and reproducible analysis of laser vaporization for BPH and will play a role in clarification of the safety and efficacy of this treatment. PMID:28765672

  19. ANALYSIS OF THERMAL-CHEMICAL CHARACTERISTICS OF BIOMASS ENERGY PELLETS

    Directory of Open Access Journals (Sweden)

    Zorica Gluvakov

    2014-09-01

    Full Text Available In modern life conditions, when emphasis is on environmental protection and sustainable development, fuels produced from biomass are increasingly gaining in importance, and it is necessary to consider the quality of end products obtained from biomass. Based on the existing European standards, collected literature and existing laboratory methods, this paper presents results of testing individual thermal - chemical properties of biomass energy pellets after extrusion and cooling the compressed material. Analysing samples based on standard methods, data were obtained on the basis of which individual thermal-chemical properties of pellets were estimated. Comparing the obtained results with the standards and literature sources, it can be said that moisture content, ash content and calorific values are the most important parameters for quality analysis which decide on applicability and use-value of biomass energy pellets, as biofuel. This paper also shows the impact of biofuels on the quality of environmental protection. The conclusion provides a clear statement of quality of biomass energy pellets.

  20. Chemical kinetic performance losses for a hydrogen laser thermal thruster

    Science.gov (United States)

    Mccay, T. D.; Dexter, C. E.

    1985-01-01

    Projected requirements for efficient, economical, orbit-raising propulsion systems have generated investigations into several potentially high specific impulse, moderate thrust, advanced systems. One of these systems, laser thermal propulsion, utilizes a high temperature plasma as the enthalpy source. The plasma is sustained by a focused laser beam which maintains the plasma temperature at levels near 20,000 K. Since such temperature levels lead to total dissociation and high ionization, the plasma thruster system potentially has a high specific impulse decrement due to recombination losses. The nozzle flow is expected to be sufficiently nonequilibrium to warrant concern over the achievable specific impluse. This investigation was an attempt at evaluation of those losses. The One-Dimensional Kinetics (ODK) option of the Two-Dimensional Kinetics (TDK) Computer Program was used with a chemical kinetics rate set obtained from available literature to determine the chemical kinetic energy losses for typical plasma thruster conditions. The rates were varied about the nominal accepted values to band the possible losses. Kinetic losses were shown to be highly significant for a laser thermal thruster using hydrogen. A 30 percent reduction in specific impulse is possible simply due to the inability to completely extract the molecular recombination energy.

  1. Thermal and chemical degradation of inorganic membrane materials. Topical report

    Energy Technology Data Exchange (ETDEWEB)

    Krishnan, G.N.; Sanjurjo, A.; Wood, B.J.; Lau, K.H.

    1994-04-01

    This report describes the results of a literature review to evaluate the long-term thermal and chemical degradation of inorganic membranes that are being developed to separate gaseous products produced by the gasification or combustion of coal in fixed-, fluidized-, and entrained-bed gasifiers, direct coal-fired turbines, and pressurized-fluidized-bed combustors. Several impurities, such as H{sub 2}S, NH{sub 3}, SO{sub 2}, NO{sub x}, and trace metal compounds are generated during coal conversion, and they must be removed from the coal gas or the combustor flue gas to meet environmental standards. The use of membranes to separate these noxious gases is an attractive alternative to their removal by sorbents such as zinc titanate or calcium oxide. Inorganic membranes that have a high separation efficiency and exhibit both thermal and chemical stability would improve the economics of power generation from coal. The U.S. Department of Energy is supporting investigations to develop inorganic membranes for separating hydrogen from coal gas streams and noxious impurities from hot coal- and flue-gas streams. Membrane materials that have been investigated in the past include glass (silica), alumina, zirconia, carbon, and metals (Pd and Pt).

  2. The Tribological Behaviors of Three Films Coated on Biomedical Titanium Alloy by Chemical Vapor Deposition

    Science.gov (United States)

    Wang, Song; Liao, Zhenhua; Liu, Yuhong; Liu, Weiqiang

    2015-11-01

    Three thin films (DLC, a-C, and TiN) were performed on Ti6Al4V by chemical vapor deposition. Carbon ion implantation was pretreated for DLC and a-C films while Ti transition layer was pretreated for TiN film to strengthen the bonding strength. X-ray diffraction, Raman measurement, nano-hardness and nano-scratch tester, and cross-section etching by FIB method were used to analyze film characteristics. Tribological behaviors of these coatings were studied by articulation with both ZrO2 and UHMWPE balls using ball-on-disk sliding. The thickness values reached ~0.46, ~0.33, and ~1.67 μm for DLC, a-C, and TiN film, respectively. Nano-hardness of the coatings compared with that of untreated and bonding strength (critical load in nano-scratch test) values of composite coatings compared with that of monolayer film all increased significantly, respectively. Under destructive test (ZrO2 ball conterface) in bovine serum lubrication, TiN coating revealed the best wear resistance while DLC showed the worst. Film failure was mainly attributed to the plowing by hard ZrO2 ball characterized by abrasive and adhesive wear. Under normal test (UHMWPE ball conterface), all coatings showed significant improvement in wear resistance both in dry sliding and bovine serum lubrication. Both DLC and a-C films showed less surface damage than TiN film due to the self-lubricating phenomenon in dry sliding. TiN film showed the largest friction coefficient both in destructive and normal tests, devoting to the big TiN grains thus leading to much rougher surface and then a higher value. The self-lubricating film formed on DLC and a-C coating could also decrease their friction coefficients. The results indicated that three coatings revealed different wear mechanisms, and thick DLC or a-C film was more promising in application in lower stress conditions such as artificial cervical disk.

  3. The mechanical properties of various chemical vapor deposition diamond structures compared to the ideal single crystal

    Science.gov (United States)

    Hess, Peter

    2012-03-01

    The structural and electronic properties of the diamond lattice, leading to its outstanding mechanical properties, are discussed. These include the highest elastic moduli and fracture strength of any known material. Its extreme hardness is strongly connected with the extreme shear modulus, which even exceeds the large bulk modulus, revealing that diamond is more resistant to shear deformation than to volume changes. These unique features protect the ideal diamond lattice also against mechanical failure and fracture. Besides fast heat conduction, the fast vibrational movement of carbon atoms results in an extreme speed of sound and propagation of crack tips with comparable velocity. The ideal mechanical properties are compared with those of real diamond films, plates, and crystals, such as ultrananocrystalline (UNC), nanocrystalline, microcrystalline, and homo- and heteroepitaxial single-crystal chemical vapor deposition (CVD) diamond, produced by metastable synthesis using CVD. Ultrasonic methods have played and continue to play a dominant role in the determination of the linear elastic properties, such as elastic moduli of crystals or the Young's modulus of thin films with substantially varying impurity levels and morphologies. A surprising result of these extensive measurements is that even UNC diamond may approach the extreme Young's modulus of single-crystal diamond under optimized deposition conditions. The physical reasons for why the stiffness often deviates by no more than a factor of two from the ideal value are discussed, keeping in mind the large variety of diamond materials grown by various deposition conditions. Diamond is also known for its extreme hardness and fracture strength, despite its brittle nature. However, even for the best natural and synthetic diamond crystals, the measured critical fracture stress is one to two orders of magnitude smaller than the ideal value obtained by ab initio calculations for the ideal cubic lattice. Currently

  4. Computational thermal, chemical, fluid, and solid mechanics for geosystems management.

    Energy Technology Data Exchange (ETDEWEB)

    Davison, Scott; Alger, Nicholas; Turner, Daniel Zack; Subia, Samuel Ramirez; Carnes, Brian; Martinez, Mario J.; Notz, Patrick K.; Klise, Katherine A.; Stone, Charles Michael; Field, Richard V., Jr.; Newell, Pania; Jove-Colon, Carlos F.; Red-Horse, John Robert; Bishop, Joseph E.; Dewers, Thomas A.; Hopkins, Polly L.; Mesh, Mikhail; Bean, James E.; Moffat, Harry K.; Yoon, Hongkyu

    2011-09-01

    This document summarizes research performed under the SNL LDRD entitled - Computational Mechanics for Geosystems Management to Support the Energy and Natural Resources Mission. The main accomplishment was development of a foundational SNL capability for computational thermal, chemical, fluid, and solid mechanics analysis of geosystems. The code was developed within the SNL Sierra software system. This report summarizes the capabilities of the simulation code and the supporting research and development conducted under this LDRD. The main goal of this project was the development of a foundational capability for coupled thermal, hydrological, mechanical, chemical (THMC) simulation of heterogeneous geosystems utilizing massively parallel processing. To solve these complex issues, this project integrated research in numerical mathematics and algorithms for chemically reactive multiphase systems with computer science research in adaptive coupled solution control and framework architecture. This report summarizes and demonstrates the capabilities that were developed together with the supporting research underlying the models. Key accomplishments are: (1) General capability for modeling nonisothermal, multiphase, multicomponent flow in heterogeneous porous geologic materials; (2) General capability to model multiphase reactive transport of species in heterogeneous porous media; (3) Constitutive models for describing real, general geomaterials under multiphase conditions utilizing laboratory data; (4) General capability to couple nonisothermal reactive flow with geomechanics (THMC); (5) Phase behavior thermodynamics for the CO2-H2O-NaCl system. General implementation enables modeling of other fluid mixtures. Adaptive look-up tables enable thermodynamic capability to other simulators; (6) Capability for statistical modeling of heterogeneity in geologic materials; and (7) Simulator utilizes unstructured grids on parallel processing computers.

  5. Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions

    Science.gov (United States)

    Tzeng, Yonhua (Inventor)

    2009-01-01

    Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

  6. Investigation of Hot Filament Chemical Vapor Deposition (HFCVD) of Heavily Boron Doped Superconductive Diamond for Device Applications

    Science.gov (United States)

    Green, Delroy Earl

    ABSTRACT Diamond has a wide bandgap of 5.47 eV at room temperature and is the hardest known naturally occurring material with a Knoop hardness of 10,400 kg/mm2 or 10 on the Mohs scale [1]. Due to the structure of the covalent bonding of its carbon atoms, diamond is extremely strong having each carbon atom bonded to four neighboring carbon atoms. Although diamond is hard, its toughness, when compared to most engineering materials, is poor. However, because of its hardness, it can be used as an efficient cutting and drilling tool. With the exception of naturally occurring blue diamonds, which are semiconductors, diamond is a good electrical insulator. However, unlike most insulators, diamond has the highest thermal conductivity of 22 W/cm-K [1, 2] among naturally occurring materials. Although diamond is a good electrical insulator, it also shows semiconducting properties when doped with impurities. When diamond is heavily doped with boron the resulting material possess excess holes and as such it is classified as a p-type material. If excess boron doping is achieved, then the resulting material is found to behave like a superconductor at very low temperatures. In this superconducting state, the doped diamond conducts electricity. A series of boron-doped diamond films were grown by hot filament chemical vapor deposition (HFCVD) and tested to determine the optimum technique for doping diamond with boron for superconductivity. The first sets of experiments were conducted by utilizing boron powder, paste or solid (B2O3) to dope the seeded diamond during growth on various substrates. The second technique, which was conducted at Blue Wave Semiconductors Inc. commercial laboratory, involves doping with diborane gas (B6H2). Various processing parameters were optimized for diamond quality, structure, morphology, and doping. A combined analysis of scanning electron microscope, Raman mapping and Hall measurements at various temperatures were conducted to ascertain the

  7. Model-aided fabrication of fiber-reinforced ceramic composite tubes using forced-flow chemical vapor infiltration

    Science.gov (United States)

    Probst, Kent Joseph

    Fiber-reinforced ceramic composites possess high thermal conductivity, high fracture toughness, and corrosion resistance, having potential for use in fossil-energy steam plants, where corrosive environments at high temperature and pressure exist. The utilization of fiber-reinforced ceramic composite tubes may enable plant operation at higher temperatures, and may extend the lifetime of specific plant operations, improving overall efficiencies and reducing down-time. Dense, fiber-reinforced ceramic composite tubes were fabricated using forced-flow, chemical vapor infiltration. This process involved gaseous ceramic precursor infiltration throughout a fibrous preform, where a temperature gradient was applied and a ceramic precursor was forced through its surface at lower temperature. The application of a suitable temperature gradient and total flow enabled the ceramic matrix deposition to preferentially translate from the preform hot-surface to the cold-surface, resulting in a dense, ceramic composite in a reasonable total process time. Fibrous tube preforms were fabricated with Nextel(TM) 312 fiber. Silicon carbide was the reinforced ceramic matrix, which was deposited throughout the tube preform using methyltrichlorosilane. A standard set of process conditions was attempted to evaluate the feasibility in achieving dense composites. Tube preform infiltrations with variation in temperature and total flow were performed to determine effects on final density and total process time. Density characterization was performed on tube preforms infiltrated with the same process conditions for various time lengths to study the transient tube densification. Tube density profiles were characterized using X-ray computed tomography and digital image analysis, and the results from both were compared for their effectiveness in the prediction of the transient tube densification. A comprehensive process model simulated the transient tube infiltration using multiple, steady

  8. The growth and characterization of group III-nitride transistor devices grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Wong, Michael Ming

    The InAlGaN, or III-nitride, material system has received much interest from the research community. A direct wide bandgap semiconductor, GaN offers a high breakdown field (>3 x 106 V/cm) due to its large bandgap energy of 3.4 eV, high electron saturation velocity (1.5 x 10 7 cm/s, predicted peak up to 2.7 x 107 cm/s), good thermal conductivity (≥1.7 W/cm K), and reasonable mobility (800 cm 2/V s). In an AlGaN/GaN heterostructure, the formation of a two-dimensional electron gas (2DEG) leads to a higher electron mobility (2000 cm2/V s) and a high sheet density (1--5 x 1013 cm -2). This makes transistors based on the III-nitride material system ideal for high-temperature, high-power, and high-frequency applications. Two such transistors include the heterojunction field-effect transistor (HFET) and bipolar junction transistor (BJT), which includes the heterojunction bipolar transistor (HBT). Both HFETs and HBTs were studied, and the epitaxial heterostructures were grown by the metalorganic chemical vapor deposition (MOCVD) technique. The MOCVD process and system are described, along with the growth details. As material characterization is important for the optimization of growth, several of the techniques used are discussed. An extensive study to improve the performance of AlGaN/GaN HFETs is detailed. Through the use of a delta-doped, binary barrier novel device structure, the highest reported maximum drain current and transconductance is reported: IDSmax = 1.82 A/mm and gm = 331 mS/mm. The device also exhibits excellent RF characteristics. HBTs based on the III-nitride material system face a more difficult challenge associated with p-type material. Development of HBTs is still in the early stages, although there are reports of working devices. The gain is still below its potential, but many of the issues have been identified. Two novel structures are reported for the first time, a GaN/InGaN/GaN pnp HBT and a AlGaN/GaN npn graded-base and collector-up HBT. The

  9. Effect of thermal, chemical and thermo-chemical pre-treatments to enhance methane production

    Energy Technology Data Exchange (ETDEWEB)

    Rafique, Rashad; Nizami, Abdul-Sattar; Murphy, Jerry D.; Kiely, Gerard [Department of Civil and Environmental Engineering, University College Cork (Ireland); Poulsen, Tjalfe Gorm [Department of Biotechnology, Chemistry and Environmental Engineering, Aalborg University (Denmark); Asam, Zaki-ul-Zaman [Department of Civil Engineering, National University of Ireland Galway (Ireland)

    2010-12-15

    The rise in oil price triggered the exploration and enhancement of various renewable energy sources. Producing biogas from organic waste is not only providing a clean sustainable indigenous fuel to the number of on-farm digesters in Europe, but also reducing the ecological and environmental deterioration. The lignocellulosic substrates are not completely biodegraded in anaerobic digesters operating at commercial scale due to their complex physical and chemical structure, which result in meager energy recovery in terms of methane yield. The focus of this study is to investigate the effect of pre-treatments: thermal, thermo-chemical and chemical pre-treatments on the biogas and methane potential of dewatered pig manure. A laboratory scale batch digester is used for these pre-treatments at different temperature range (25 C-150 C). Results showed that thermo-chemical pretreatment has high effect on biogas and methane potential in the temperature range (25-100 C). Maximum enhancement is observed at 70 C with increase of 78% biogas and 60% methane production. Thermal pretreatment also showed enhancement in the temperature range (50-10 C), with maximum enhancement at 100 C having 28% biogas and 25% methane increase. (author)

  10. Superluminal propagation of pulsed pseudo-thermal light in atomic vapor.

    Science.gov (United States)

    Bae, In-Ho; Cho, Young-Wook; Lee, Hee Jung; Kim, Yoon-Ho; Moon, Han Seb

    2010-09-13

    We report an experimental demonstration of slow and superluminal propagation of pseudo-thermal (chaotic) light in the Λ-type system of the 5S(1/2)-5P(1/2) transition of (87)Rb atom. The slowed propagation of pulsed pseudo-thermal light was demonstrated in an electromagnetically-induced transparency medium while the superluminal propagation was demonstrated with the enhanced absorption scheme where the coupling field takes the form of a standing wave.We have also demonstrated that the photon number statistics of the pseudo-thermal light is preserved for both the subluminal and superluminal cases.

  11. A coupled THC model of the FEBEX in situ test with bentonite swelling and chemical and thermal osmosis

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, L.; Samper, J.; Montenegro, L.

    2011-04-01

    The performance assessment of a geological repository for radioactive waste requires quantifying the geochemical evolution of the bentonite engineered barrier. This barrier will be exposed to coupled thermal (T), hydrodynamic (H), mechanical (M) and chemical (C) processes. This paper presents a coupled THC model of the FEBEX (Full-scale Engineered Barrier EXperiment) in situ test which accounts for bentonite swelling and chemical and thermal osmosis. Model results attest the relevance of thermal osmosis and bentonite swelling for the geochemical evolution of the bentonite barrier while chemical osmosis is found to be almost irrelevant. The model has been tested with data collected after the dismantling of heater 1 of the in situ test. The model reproduces reasonably well the measured temperature, relative humidity, water content and inferred geochemical data. However, it fails to mimic the solute concentrations at the heater-bentonite and bentonite-granite interfaces because the model does not account for the volume change of bentonite, the CO{sub 2}(g) degassing and the transport of vapor from the bentonite into the granite. The inferred HCO{sub 3}{sup -} and pH data cannot be explained solely by solute transport, calcite dissolution and protonation/deprotonation by surface complexation, suggesting that such data may be affected also by other reactions.

  12. Aerosol - assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods

    Czech Academy of Sciences Publication Activity Database

    Vallejos, S.; Pizúrová, Naděžda; Čechal, J.; Grácia, I.; Cané, C.

    2017-01-01

    Roč. 2017, Č. 127 (2017), č. článku e56127. ISSN 1940-087X Institutional support: RVO:68081723 Keywords : Zinc oxide * columnar structures * rods * AACVD * non-catalyzed growth * vapor-solid mechanism Subject RIV: CA - Inorganic Chemistry OBOR OECD: Polymer science Impact factor: 1.232, year: 2016 https://www.jove.com/video/56127

  13. Semi-continuous high speed gas analysis of generated vapors of chemical warfare agents

    NARCIS (Netherlands)

    Trap, H.C.; Langenberg, J.P.

    1999-01-01

    A method is presented for the continuous analysis of generated vapors of the nerve agents soman and satin and the blistering agent sulfur mustard. By using a gas sampling valve and a very short (15 cm) column connected to an on-column injector with a 'standard length' column, the system can either

  14. Complete Numerical Simulation of Subcooled Flow Boiling in the Presence of Thermal and Chemical Interactions

    Energy Technology Data Exchange (ETDEWEB)

    V.K. Dhir

    2003-04-28

    At present, guidelines for fuel cycle designs to prevent axial offset anomalies (AOA) in pressurized water reactor (PWR) cores are based on empirical data from several operating reactors. Although the guidelines provide an ad-hoc solution to the problem, a unified approach based on simultaneous modeling of thermal-hydraulics, chemical, and nuclear interactions with vapor generation at the fuel cladding surface does not exist. As a result, the fuel designs are overly constrained with a resulting economic penalty. The objective of present project is to develop a numerical simulation model supported by laboratory experiments that can be used for fuel cycle design with respect to thermal duty of the fuel to avoid economic penalty, as well as, AOA. At first, two-dimensional numerical simulation of the growth and departure of a bubble in pool boiling with chemical interaction is considered. A finite difference scheme is used to solve the equations governing conservation of mass, momentum, energy, and species concentration. The Level Set method is used to capture the evolving liquid-vapor interface. A dilute aqueous boron solution is considered in the simulation. From numerical simulations, the dynamic change in concentration distribution of boron during the bubble growth shows that the precipitation of boron can occur near the advancing and receding liquid-vapor interface when the ambient boron concentration level is 3,000 ppm by weight. Secondly, a complete three-dimensional numerical simulation of inception, growth and departure of a single bubble subjected to forced flow parallel to the heater surface was developed. Experiments on a flat plate heater with water and with boron dissolved in the water were carried out. The heater was made out of well-polished silicon wafer. Numbers of nucleation sites and their locations were well controlled. Bubble dynamics in great details on an isolated nucleation site were obtained while varying the wall superheat, liquid subcooling

  15. Thermal Conductivity and Water Vapor Stability of Ceramic HfO2-Based Coating Materials

    Science.gov (United States)

    Zhu, Dong-Ming; Fox, Dennis S.; Bansal, Narottam P.; Miller, Robert A.

    2004-01-01

    HfO2-Y2O3 and La2Zr2O7 are candidate thermal/environmental barrier coating materials for gas turbine ceramic matrix composite (CMC) combustor liner applications because of their relatively low thermal conductivity and high temperature capability. In this paper, thermal conductivity and high temperature phase stability of plasma-sprayed coatings and/or hot-pressed HfO2-5mol%Y2O3, HfO2-15mol%Y2O3 and La2Zr2O7 were evaluated at temperatures up to 1700 C using a steady-state laser heat-flux technique. Sintering behavior of the plasma-sprayed coatings was determined by monitoring the thermal conductivity increases during a 20-hour test period at various temperatures. Durability and failure mechanisms of the HfO2-Y2O3 and La2Zr2O7 coatings on mullite/SiC Hexoloy or CMC substrates were investigated at 1650 C under thermal gradient cyclic conditions. Coating design and testing issues for the 1650 C thermal/environmental barrier coating applications will also be discussed.

  16. Virtual test bench as a complement to study thermal area: application in vapor compression systems

    Directory of Open Access Journals (Sweden)

    Juan Manuel Belman-Flores

    2015-01-01

    Full Text Available Este artículo describe un simulador educativo desarrollado en el software Engineering Equation Solver para representar el comportamiento de un sistema de compresión de vapor. La aplicación está enfocada con propósitos educativos, particularmente para que estudiantes de ingeniería adquieran habilidades en el manejo de instalaciones de refrigeración. Mediante el uso de este simulador, los estudiantes tendrán la capacidad de analizar fácilmente la infl uencia que tienen parámetros medidos experimentalmente (como la velocidad de rotación del compresor, el fl ujo volumétrico y la temperatura de fl uidos secundarios sobre la efi ciencia energética del sistema y sus componentes principales. El banco virtual consta de una pantalla principal que muestra un esquema general del sistema de compresión de vapor con parámetros de entrada y de salida. Desde la pantalla principal, el desempeño de los componentes principales puede ser analizado. Finalmente, este banco de pruebas virtual ha sido probado por estudiantes de ingeniería, concluyendo que el simulador es una herramienta de apoyo que permite mejorar el aprendizaje de las diferentes áreas del conocimiento.

  17. Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Lee, In-Hwan; Polyakov, Alexander Y.; Smirnov, Nikolai B.; Yakimov, Eugene B.; Tarelkin, Sergey A.; Turutin, Andery V.; Shemerov, Ivan V.; Pearton, Stephen J.

    2016-06-01

    For a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) using both straight MOCVD and epitaxial lateral overgrowth techniques (ELOG proper or pendeo overgrowth), the spectra of deep traps were measured by deep-level transient spectroscopy (DLTS) with electrical or optical injection (ODLTS). The results were compared with diffusion length measurement results obtained from electron-beam-induced current experiments. The results strongly indicate that deep electron traps near E c - 0.56 eV could be the major recombination centers determining the diffusion length values in pendeo samples.

  18. Characterization of Boron Carbonitride (BCN) Thin Films Deposited by Radiofrequency and Microwave Plasma Enhanced Chemical Vapor Deposition

    OpenAIRE

    M. A. Mannan; Nagano, M.; K. Shigezumi; Kida, T.; Hirao, N.; Baba, Y.

    2008-01-01

    Boron carbonitride (BCN) thin films with a thickness of ~4 µ­m were synthesized on Si (100) substrate by radiofrequency and microwave plasma enhanced chemical vapor deposition using trimethylamine borane [(CH3)3N.BH3)] as a molecular precursor. The microstructures of the films were evaluated using field emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze t...

  19. Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

    2010-05-01

    Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

  20. In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    S. Nunomura

    2014-09-01

    Full Text Available The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.

  1. Direct Fabrication of Carbon Nanotubes STM Tips by Liquid Catalyst-Assisted Microwave Plasma-Enhanced Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Fa-Kuei Tung

    2009-01-01

    Full Text Available Direct and facile method to make carbon nanotube (CNT tips for scanning tunneling microscopy (STM is presented. Cobalt (Co particles, as catalysts, are electrochemically deposited on the apex of tungsten (W STM tip for CNT growth. It is found that the quantity of Co particles is well controlled by applied DC voltage, concentration of catalyst solution, and deposition time. Using optimum growth condition, CNTs are successfully synthesized on the tip apex by catalyst-assisted microwave-enhanced chemical vapor deposition (CA-MPECVD. A HOPG surface is clearly observed at an atomic scale using the present CNT-STM tip.

  2. Effects of substrates on Raman spectroscopy in chemical vapor deposition grown graphene transferred with poly (methyl methacrylate)

    Science.gov (United States)

    Gui, Yangyang; Sun, Hengchao; Yan, Hui; Wang, Hao; Zhang, Yongzhe; Song, Xue Mei; Jia, Rui

    2017-09-01

    Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/Si, boron-doped Si, phosphorus-doped Si have been studied. It is found that all the material varieties, morphology and lattice of substrates can influence the Raman scattering spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.

  3. Adsorption and desorption of P on (001) InP surface in metalorganic chemical vapor deposition by surface photoabsorption

    CERN Document Server

    Lee, T W; Moon, Y B; Yoon, E J; Kim, Y D

    1999-01-01

    We studied the surface structure of (001) InP in metalorganic chemical vapor deposition (MOCVD) ambient by surface photoabsorption (SPA). A P-dimer peak at 430 nm and an In-dimer peak at 600 nm were observed from the SPA subtraction spectra. A maximum SPA reflectivity change of 8 % between the P-stabilized and the In-stabilized surfaces was obtained at 470 nm. A first-order desorption kinetics was assumed to curve-fit the SPA signal and an activation energy of 3.36 eV was obtained.

  4. Electromechanical studies of YBaCuO tape fabricated by metal-organic chemical vapor deposition for coil applications

    Energy Technology Data Exchange (ETDEWEB)

    Shikimachi, K [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Kashima, N [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Nagaya, S [Chubu Electric Power Co., Inc., 20-1, Kitasekiyama, Ohdaka-cho, Midori-ku, Nagoya 459-8522 (Japan); Miyata, S [Nagoya Coated Conductor Center ISTEC-SRL, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567 (Japan); Yamada, Y [Nagoya Coated Conductor Center ISTEC-SRL, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8567 (Japan); Izumi, T [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Nakao, K [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan); Shiohara, Y [ISTEC-SRL, 1-10-13, Shinonome, Koto-ku, Tokyo 135-0062 (Japan)

    2006-06-01

    YBCO coated conductor has high prospects for coils used in high magnetic fields, but not only its higher transport characteristics but also its adequate workability are required for coil applications. In these studies, mechanical properties of YBCO tape fabricated by multistage chemical vapor deposition were investigated by flat-wise and edgewise bend strain tests. After estimation of influences of its bend strain and its self magnetic field, a small coil of the long YBCO tape could be manufactured. Basic characteristics of the coil were investigated and maximum magnetic field of 0.4 T class was achieved in decompressed liquid nitrogen by the small YBCO coil.

  5. Oxygen source-oriented control of atmospheric pressure chemical vapor deposition of VO2 for capacitive applications

    Directory of Open Access Journals (Sweden)

    Dimitra Vernardou

    2016-06-01

    Full Text Available Vanadium dioxides of different crystalline orientation planes have successfully been fabricated by chemical vapor deposition at atmospheric pressure using propanol, ethanol and O2 gas as oxygen sources. The thick a-axis textured monoclinic vanadium dioxide obtained through propanol presented the best electrochemical response in terms of the highest specific discharge capacity of 459 mAh g-1 with a capacitance retention of 97 % after 1000 scans under constant specific current of 2 A g-1. Finally, the electrochemical impedance spectroscopy indicated that the charge transfer of Li+ through the vanadium dioxide / electrolyte interface was easier for this sample enhancing significantly its capacitance performance.

  6. Flexible Electronics: High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells (Adv. Mater. 28/2016).

    Science.gov (United States)

    He, Rongrui; Day, Todd D; Sparks, Justin R; Sullivan, Nichole F; Badding, John V

    2016-07-01

    On page 5939, J. V. Badding and co-workers describe the unrolling of a flexible hydrogenated amorphous silicon solar cell, deposited by high-pressure chemical vapor deposition. The high-pressure deposition process is represented by the molecules of silane infiltrating the small voids between the rolled up substrate, facilitating plasma-free deposition over a very large area. The high-pressure approach is expected to also find application for 3D nanoarchitectures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Hot-Wire Chemical Vapor Deposition Of Polycrystalline Silicon : From Gas Molecule To Solar Cell

    Science.gov (United States)

    van Veenendaal, P. A. T. T.

    2002-10-01

    Although the effort to investigate the use of renewable energy sources, such as wind and solar energy, has increased, their contribution to the total energy consumption remains insignificant. The conversion of solar energy into electricity through solar cells is one of the most promising techniques, but the use of these cells is limited by the high cost of electricity. The major contributions to these costs are the material and manufacturing costs. Over the past decades, the development of silicon based thin film solar cells has received much attention, because the fabrication costs are low. A promising material for use in thin film solar cells is polycrystalline silicon (poly-Si:H). A relatively new technique to deposit poly-Si:H is Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD), in which the reactant gases are catalytically decomposed at the surface of a hot filament, mainly tungsten and tantalum. The main advantages of Hot-Wire CVD over PE-CVD are absence of ion bombardment, high deposition rate, low equipment cost and high gas utilization. This thesis deals with the full spectrum of deposition, characterization and application of poly-Si:H thin films, i.e. from gas molecule to solar cell. Studies on the decomposition of silane on the filament showed that the process is catalytic of nature and that silane is decomposed into Si and 4H. The dominant gas phase reaction is the reaction of Si and H with silane, resulting in SiH3, Si2H6, Si3H6 and H2SiSiH2. The film growth precursors are Si, SiH3 and Si2H4. Also, XPS results on used tantalum and tungsten filaments are discussed. The position dependent measurements show larger silicon contents at the ends of the tungsten filament, as compared to the middle, due to a lower filament temperature. This effect is insignificant for a tantalum filament. Deposition time dependent measurements show an increase in silicon content of the tungsten filament with time, while the silicon content on the tantalum filament saturates

  8. The impact of hydrogen and oxidizing impurities in chemical vapor deposition of graphene on copper

    Science.gov (United States)

    Choubak, Saman

    Graphene, the single-atom layer of carbon, has attracted scientists and technologists due to its outstanding physical and opto/electronic properties. The use of graphene in practical applications requires a reliable and cost-effective method to produce large area graphene films with low defects and controlled thicknesses. Direct growth of graphene using chemical vapor deposition (CVD) on copper, in which carbonaceous gaseous species react with the metal substrate in the presence of hydrogen at high temperatures (850-1100° C), led to high coverage of high quality graphene, opening up a promising future for methods of this type and a large step towards commercial realization of graphene products. The present thesis deals with the synthesis of graphene via low pressure CVD (LP-CVD) on copper catalyst using methane as the carbon precursor. The focus is mainly on the determination of the role of hydrogen and oxidizing impurities during graphene formation with an ultimate purpose: to elucidate a viable and reproducible method for the production of high quality graphene films compatible with industrial manufacturing processes. The role of molecular hydrogen in graphene CVD is explored in the first part of the thesis. Few studies claimed that molecular hydrogen etches graphene films on copper by conducting annealing experiments. On the other hand, we speculated that this graphene etching reaction is due to the presence of trace amount of oxygen in the furnace atmosphere. Thus, we took another approach and designed systematic annealing experiments to investigate the role of hydrogen in the etching reaction of graphene on copper foils. No evidence of graphene etching on copper was observed when purified ultra high purity (UHP) hydrogen was used at 825 °C and 500 mTorr. Nevertheless, graphene films exposed to the unpurified UHP hydrogen were etched due to the presence of oxidizing impurities. Our results show that hydrogen is not responsible for graphene etching reaction

  9. Nanostructured Thin Film Synthesis by Aerosol Chemical Vapor Deposition for Energy Storage Applications

    Science.gov (United States)

    Chadha, Tandeep S.

    Renewable energy sources offer a viable solution to the growing energy demand while mitigating concerns for greenhouse gas emissions and climate change. This has led to a tremendous momentum towards solar and wind-based energy harvesting technologies driving efficiencies higher and costs lower. However, the intermittent nature of these energy sources necessitates energy storage technologies, which remain the Achilles heel in meeting the renewable energy goals. This dissertation focusses on two approaches for addressing the needs of energy storage: first, targeting direct solar to fuel conversion via photoelectrochemical water-splitting and second, improving the performance of current rechargeable batteries by developing new electrode architectures and synthesis processes. The aerosol chemical vapor deposition (ACVD) process has emerged as a promising single-step approach for nanostructured thin film synthesis directly on substrates. The relationship between the morphology and the operating parameters in the process is complex. In this work, a simulation based approach has been developed to understand the relationship and acquire the ability of predicting the morphology. These controlled nanostructured morphologies of TiO2 , compounded with gold nanoparticles of various shapes, are used for solar water-splitting applications. Tuning of light absorption in the visible-light range along with reduced electron-hole recombination in the composite structures has been demonstrated. The ACVD process is further extended to a novel single-step synthesis of nanostructured TiO2 electrodes directly on the current collector for applications as anodes in lithium-ion batteries, mainly for electric vehicles and hybrid electric vehicles. The effect of morphology of the nanostructures has been investigated via experimental studies and electrochemical transport modelling. Results demonstrate the exceptional performance of the single crystal one-dimensional nanostructures over granular

  10. Evidence of Non-local Chemical, Thermal and Gravitational Effects

    Directory of Open Access Journals (Sweden)

    Hu H.

    2007-04-01

    Full Text Available Quantum entanglement is ubiquitous in the microscopic world and manifests itself macroscopically under some circumstances. But common belief is that it alone cannot be used to transmit information nor could it be used to produce macroscopic non- local effects. Yet we have recently found evidence of non-local effects of chemical substances on the brain produced through it. While our reported results are under independent verifications by other groups, we report here our experimental findings of non-local chemical, thermal and gravitational effects in simple physical systems such as reservoirs of water quantum-entangled with water being manipulated in a remote reservoir. With the aids of high-precision instruments, we have found that the pH value, temperature and gravity of water in the detecting reservoirs can be non-locally affected through manipulating water in the remote reservoir. In particular, the pH value changes in the same direction as that being manipulated; the temperature can change against that of local environment; and the gravity apparently can also change against local gravity. These non-local effects are all reproducible and can be used for non-local signalling and many other purposes. We suggest that they are mediated by quantum entanglement between nuclear and/or electron spins in treated water and discuss the implications of these results.

  11. Desktop Systems for Manufacturing Carbon Nanotube Films by Chemical Vapor Deposition

    National Research Council Canada - National Science Library

    Kuhn, David S

    2007-01-01

    Carbon nanotubes (CNTs) exhibit exceptional electrical, thermal, and mechanical properties that could potentially transform such diverse fields as composites, electronics, cooling, energy storage, and biological sensing...

  12. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

    KAUST Repository

    Hussain, Aftab M.

    2013-08-16

    We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Optimization of Gas Composition Used in Plasma Chemical Vaporization Machining for Figuring of Reaction-Sintered Silicon Carbide with Low Surface Roughness.

    Science.gov (United States)

    Sun, Rongyan; Yang, Xu; Ohkubo, Yuji; Endo, Katsuyoshi; Yamamura, Kazuya

    2018-02-05

    In recent years, reaction-sintered silicon carbide (RS-SiC) has been of interest in many engineering fields because of its excellent properties, such as its light weight, high rigidity, high heat conductance and low coefficient of thermal expansion. However, RS-SiC is difficult to machine owing to its high hardness and chemical inertness and because it contains multiple components. To overcome the problem of the poor machinability of RS-SiC in conventional machining, the application of atmospheric-pressure plasma chemical vaporization machining (AP-PCVM) to RS-SiC was proposed. As a highly efficient and damage-free figuring technique, AP-PCVM has been widely applied for the figuring of single-component materials, such as Si, SiC, quartz crystal wafers, and so forth. However, it has not been applied to RS-SiC since it is composed of multiple components. In this study, we investigated the AP-PCVM etching characteristics for RS-SiC by optimizing the gas composition. It was found that the different etching rates of the different components led to a large surface roughness. A smooth surface was obtained by applying the optimum gas composition, for which the etching rate of the Si component was equal to that of the SiC component.

  14. Modeling of chemical vapor deposition. II. Gas phase epitaxy of (100) GaAs

    Science.gov (United States)

    Korec, J.; Heyen, M.

    1982-12-01

    The approach described in part I of this paper is applied here to model the CVD of GaAs in a halide transport system. A quantitative description of the effect of growth temperature on the growth rate is obtained. Also the effect of GaCl and arsenic vapor pressure on the growth rate is described. The theoretical estimate of the transition point between etching and growth is close to the experimental value.

  15. Chemical contrast observed in thermal images of blood-stained fabrics exposed to steam.

    Science.gov (United States)

    O'Brien, Wayne L; Boltin, Nicholas D; Lu, Zhenyu; Cassidy, Brianna M; Belliveau, Raymond G; Straub, Emory J; DeJong, Stephanie A; Morgan, Stephen L; Myrick, M L

    2015-09-21

    Thermal imaging is not ordinarily a good way to visualize chemical contrast. In recent work, however, we observed strong and reproducible images with chemical contrasts on blood-stained fabrics, especially on more hydrophobic fabrics like acrylic and polyester.

  16. Thermal barrier coating by electron beam-physical vapor deposition of zirconia co-doped with yttria and niobia

    Directory of Open Access Journals (Sweden)

    Daniel Soares de Almeida

    2010-08-01

    Full Text Available The most usual ceramic material for coating turbine blades is yttria doped zirconia. Addition of niobia, as a co-dopant in the Y2O3-ZrO2 system, can reduce the thermal conductivity and improve mechanical properties of the coating. The purpose of this work was to evaluate the influence of the addition of niobia on the microstructure and thermal properties of the ceramic coatings. SEM on coatings fractured cross-section shows a columnar structure and the results of XRD show only zirconia tetragonal phase in the ceramic coating for the chemical composition range studied. As the difference NbO2,5-YO1,5 mol percent increases, the tetragonality increases. A significant reduction of the thermal conductivity, measured by laser flash technique in the zirconia coating co-doped with yttria and niobia when compared with zirconia-yttria coating was observed.

  17. Resolving the nanostructure of plasma-enhanced chemical vapor deposited nanocrystalline SiOx layers for application in solar cells

    Science.gov (United States)

    Klingsporn, M.; Kirner, S.; Villringer, C.; Abou-Ras, D.; Costina, I.; Lehmann, M.; Stannowski, B.

    2016-06-01

    Nanocrystalline silicon suboxides (nc-SiOx) have attracted attention during the past years for the use in thin-film silicon solar cells. We investigated the relationships between the nanostructure as well as the chemical, electrical, and optical properties of phosphorous, doped, nc-SiO0.8:H fabricated by plasma-enhanced chemical vapor deposition. The nanostructure was varied through the sample series by changing the deposition pressure from 533 to 1067 Pa. The samples were then characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometry, Raman spectroscopy, aberration-corrected high-resolution transmission electron microscopy, selected-area electron diffraction, and a specialized plasmon imaging method. We found that the material changed with increasing pressure from predominantly amorphous silicon monoxide to silicon dioxide containing nanocrystalline silicon. The nanostructure changed from amorphous silicon filaments to nanocrystalline silicon filaments, which were found to cause anisotropic electron transport.

  18. Remote nitrogen microwave plasma chemical vapor deposition from a tetramethyldisilazane precursor. 2. Properties of deposited silicon carbonitride films

    Energy Technology Data Exchange (ETDEWEB)

    Blaszczyk-Lezak, I. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland); Wrobel, A.M. [Centre of Molecular and Macromolecular Studies, Polish Academy of Sciences, Sienkiewicza 112, PL-90-363 Lodz (Poland)]. E-mail: amwrobel@bilbo.cbmm.lodz.pl; Bielinski, D.M. [Institute of Polymers, Faculty of Chemistry, Technical University of Lodz, 90-924 Lodz (Poland)

    2006-02-21

    The physical, optical, and mechanical properties of silicon carbonitride (Si:C:N) films produced by the remote nitrogen plasma chemical vapor deposition (RP-CVD) from tetramethyldisilazane have been investigated in relation to their chemical composition and structure. The films deposited at different substrate temperature (30-400 deg. C) were characterized in terms of their density, refractive index, hardness, elastic modulus, and friction coefficient. The correlations between the film compositional parameters, expressed by the atomic concentration ratios N / Si, C / Si, and N / C, as well as structural parameters described by the relative integrated intensities of the infrared absorption bands from the Si-N, Si-C, and SiMe units (controlled by substrate temperature) were investigated. On the basis of the results of these studies, reasonable structure-property relationships have been determined.

  19. The role of surface chemical analysis in a study to select replacement processes for TCA vapor degreasing

    Science.gov (United States)

    Lesley, Michael W.; Davis, Lawrence E.; Moulder, John F.; Carlson, Brad A.

    1995-01-01

    The role of surface-sensitive chemical analysis (ESCA, AES, and SIMS) in a study to select a process to replace 1, 1, 1-trichloroethane (TCA) vapor degreasing as a steel and aluminum bonding surface preparation method is described. The effort was primarily concerned with spray-in-air cleaning processes involving aqueous alkaline and semi-aqueous cleaners and a contamination sensitive epoxy-to-metal bondline. While all five cleaners tested produced bonding strength results equal to or better than those produced by vapor degreasing, the aqueous alkaline cleaners yielded results which were superior to those produced by the semi-aqueous cleaners. The main reason for the enhanced performance appears to be a silicate layer left behind by the aqueous alkaline cleaners. The silicate layer increases the polarity of the surface and enhances epoxy-to-metal bonding. On the other hand, one of the semi-aqueous cleaners left a nonpolar carbonaceous residue which appeared to have a negative effect on epoxy-to-metal bonding. Differences in cleaning efficiency between cleaners/processes were also identified. These differences in surface chemistry, which were sufficient to affect bonding, were not detected by conventional chemical analysis techniques.

  20. Crack-free yttria stabilized zirconia thin films by aerosol assisted chemical vapor deposition: Influence of water and carrier gas

    Energy Technology Data Exchange (ETDEWEB)

    Schlupp, M.V.F., E-mail: Meike.Schlupp@mat.ethz.ch [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Binder, S.; Martynczuk, J.; Prestat, M. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); Gauckler, L.J. [Nonmetallic Inorganic Materials, ETH Zuerich, Wolfgang-Pauli-Str. 10, 8093 Zuerich (Switzerland); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395 (Japan)

    2012-11-01

    Yttria stabilized zirconia thin films are deposited on silicon single crystal substrates by aerosol assisted chemical vapor deposition from precursor solutions of zirconium and yttrium 2,4-pentanedionate in ethanol. Continuous films are obtained using pure oxygen, pure nitrogen, or mixtures of both as carrier gas. In the simultaneous presence of water and oxygen, crack formation is observed for films deposited at intermediate substrate temperatures (450 Degree-Sign C), while those deposited at low (300 Degree-Sign C) and high (600 Degree-Sign C) temperatures remain crack-free. Crack-free films can be deposited at 450 Degree-Sign C in a water-free setting, or in the presence of water using pure nitrogen as carrier gas. The addition of water to the precursor solutions also significantly reduces film growth rates. - Highlights: Black-Right-Pointing-Pointer Thin film deposition by aerosol assisted chemical vapor deposition (AA-CVD) Black-Right-Pointing-Pointer Yttria stabilized zirconia (YSZ) thin films deposited between 300 Degree-Sign C and 600 Degree-Sign C Black-Right-Pointing-Pointer Water decreases growth rates and leads to crack formation in AA-CVD of YSZ. Black-Right-Pointing-Pointer Crack-free YSZ thin films deposited using oxygen and/or nitrogen as carrier gas Black-Right-Pointing-Pointer YSZ thin films deposited by AA-CVD show low shrinkage on annealing at 1000 Degree-Sign C.

  1. Synthesis by aerosol assisted chemical vapor deposition and microstructural characterization of PbTiO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Cano, J.; Hurtado-Macías, A.; Antúnez-Flores, W.; Fuentes-Cobas, L.; González-Hernández, J.; Amézaga-Madrid, P.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2013-03-01

    Thin films of PbTiO{sub 3} were deposited onto (001) silicon single-crystal substrates by aerosol assisted chemical vapor deposition method at different temperatures, using organometallic precursors. With the objective of stabilizing and homogenizing the perovskite phase, the films were annealed at 800 °C, in a Pb-rich atmosphere, for 4 and 6 h. The evolution of compositions and microstructure of the films was characterized before and after annealing, by grazing incidence X-ray diffraction, two-dimensional detection of grazing incidence diffraction with synchrotron radiation, scanning electron microscopy and high resolution transmission electron microscopy. X-ray diffraction results showed that the crystalline structure of optimized PbTiO{sub 3} films corresponded to a tetragonal perovskite-type, with lattice parameters a = 0.387(4) nm and c = 0.406(4) nm. In addition, the inverse pole figure of the fiber texture representation, had a Gaussian (1, 1, 0) component and distribution width Ω = 15°. - Highlights: ► We report the synthesis of homogeneous PbTiO{sub 3} thin films on Si substrates. ► They were synthesized by aerosol assisted chemical vapor deposition method. ► Detailed characterization by X-ray diffraction and electron microscopy was performed. ► Crystalline structure of PbTiO{sub 3} films corresponded to a tetragonal perovskite-type. ► The fiber texture representation had a Gaussian (1, 1, 0) component.

  2. Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

    Science.gov (United States)

    Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

    2016-10-05

    In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

  3. Scanning Thermal Lithography for Nanopatterning of Polymers. Transient Heat Transport and Thermal Chemical Functionalization Across the Length Scales

    NARCIS (Netherlands)

    Duvigneau, Joost

    2011-01-01

    The research described in this Thesis comprises the development of Scanning Thermal Lithography (SThL) as an alternative approach for the spatially controlled, highly localized thermal chemical surface modification of polymer films for the development of e.g. (bio)sensors. In the Thesis, the range

  4. Calibrated vapor generator source

    Science.gov (United States)

    Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

    1995-09-26

    A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

  5. Synthesis of carbon nanomaterials by catalytic chemical vapor deposition: growth mechanisms on metal powders and foils

    OpenAIRE

    Romero Rodríguez, Pablo

    2017-01-01

    Actualmente, las excelentes propiedades proporcionadas a escala nanométrica por los nanomateriales de carbono, como nanotubos y grafeno, motivan la propuesta teórica de un gran número de aplicaciones. Estos nanomateriales se pueden producir por deposición química en fase vapor (CVD), que consiste en la descomposición térmica de hidrocarburos sobre catalizadores metálicos. La técnica de CVD permite, a través del control de las condiciones de síntesis y la composición y morfología del catalizad...

  6. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Dan; Tang, Xiaohong, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn; Li, Xianqiang [OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wang, Kai, E-mail: exhtang@ntu.edu.sg, E-mail: wangk@sustc.edu.cn [Department of Electrical & Electronic Engineering, South University of Science and Technology of China, 1088 Xueyuan Avenue, Shenzhen 518055 (China); Olivier, Aurelien [CINTRA UMI 3288, School of Electrical and Electronic Engineering, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553 Singapore (Singapore)

    2016-03-07

    After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.

  7. Ni nanoparticles prepared by simple chemical method for the synthesis of Ni/NiO-multi-layered graphene by chemical vapor deposition

    Science.gov (United States)

    Ali, Mokhtar; Remalli, Nagarjuna; Gedela, Venkataramana; Padya, Balaji; Jain, Pawan Kumar; Al-Fatesh, Ahmed; Rana, Usman Ali; Srikanth, Vadali V. S. S.

    2017-02-01

    A new chemical method was used to obtain a high yield of nickel nanoparticles (Ni-NPs). The effect of solvent (distilled water, ethylene glycol, and ethanol) and surfactant (oleic acid and polyvinyl pyrrolidinone) on the morphology and crystallinity of the synthesized Ni-NPs has been investigated. The experimental results revealed that among the solvents mentioned above, ethanol gives the best results in terms of complete reduction, controlled morphology and size distribution of Ni-NPs. The surfactants played an important role in impeding the agglomeration and surface oxidation of Ni-NPs. The surfactants also affected the morphology of the Ni-NPs. The synthesized Ni-NPs are found to be quite stable in air. The best of the synthesized Ni-NPs were effectively used as catalysts for the synthesis of Ni/NiO-multi-layered graphene using catalytic chemical vapor deposition technique.

  8. Tandem solar cells deposited using hot-wire chemical vapor deposition

    Science.gov (United States)

    van Veen, M. K.

    2003-05-01

    In this thesis, the application of the hot-wire chemical vapor deposition (HWCVD) technique for the deposition of silicon thin films is described. The HWCVD technique is based on the dissociation of silicon-containing gasses at the catalytic surface of a hot filament. Advantages of this technique are the high deposition rate, the low equipment costs, and the scalability. The main goal of this thesis is the optimization of the material properties of both hydrogenated amorphous silicon and microcrystalline silicon, so that these materials can be incorporated as the absorbing layers in tandem solar cells. Firstly, the influence of specific deposition parameters on the material quality of hydrogenated amorphous silicon was investigated. With the use of tantalum filaments, the deposition temperature could be decreased to moderate temperatures, while the (electronic) properties of the amorphous silicon were improved. However, at these low filament temperatures the silicide formation at the filaments was enhanced, resulting in a decrease in the deposition rate and a deterioration of the material quality over time. For extensive silicide formation, even epitaxial growth on crystalline wafers was observed. By preheating the filaments at elevated temperature before deposition, the influence of silicide formation could be minimized, which resulted in an improvement in the reproducibility of the material quality. Solar cells, in which the absorbing layer was made at moderate temperature, had high open-circuit voltages and high fill factors. The best n-i-p structured cell on plain stainless steel had an initial efficiency of 7.2 %. The incorporation of amorphous silicon in p-i-n structured cells with a textured front contact resulted in a higher short-circuit current density and a higher efficiency. Occasionally, many n-i-p structured cells showed shunting problems. The number of working cells was directly correlated to the age of the filaments. The presence of silicides on the

  9. First vapor explosion calculations performed with MC3D thermal-hydraulic code

    Energy Technology Data Exchange (ETDEWEB)

    Brayer, C.; Berthoud, G. [CEA Centre d`Etudes de Grenoble, 38 (France). Direction des Reacteurs Nucleaires

    1998-01-01

    This paper presents the first calculations performed with the `explosion` module of the multiphase computer code MC3D, which is devoted to the fine fragmentation and explosion phase of a fuel coolant interaction. A complete description of the physical laws included in this module is given. The fragmentation models, taking into account two fragmentation mechanisms, a thermal one and an hydrodynamic one, are also developed here. Results to some calculations to test the numerical behavior of MC3D and to test the explosion models in 1D or 2D are also presented. (author)

  10. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Duarte, Fabio Andrei; Bizzi, Cezar Augusto; Goldschmidt Antes, Fabiane; Dressler, Valderi Luiz [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil); Flores, Erico Marlon de Moraes [Departamento de Quimica, Universidade Federal de Santa Maria, 97105-900 Santa Maria, RS (Brazil)], E-mail: flores@quimica.ufsm.br

    2009-06-15

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L{sup - 1} KBr in 6 mol L{sup - 1} HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L{sup - 1} HCl and 2.5% m/v NaBH{sub 4} solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 deg. C and the atomization temperature was set at 650 deg. C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g{sup - 1} for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  11. Organic, inorganic and total mercury determination in fish by chemical vapor generation with collection on a gold gauze and electrothermal atomic absorption spectrometry

    Science.gov (United States)

    Duarte, Fábio Andrei; Bizzi, Cezar Augusto; Antes, Fabiane Goldschmidt; Dressler, Valderi Luiz; Flores, Érico Marlon de Moraes

    2009-06-01

    A method for organic, inorganic and total mercury determination in fish tissue has been developed using chemical vapor generation and collection of mercury vapor on a gold gauze inside a graphite tube and further atomization by electrothermal atomic absorption spectrometry. After drying and cryogenic grinding, potassium bromide and hydrochloric acid solution (1 mol L - 1 KBr in 6 mol L - 1 HCl) was added to the samples. After centrifugation, total mercury was determined in the supernatant. Organomercury compounds were selectively extracted from KBr solution using chloroform and the resultant solution was back extracted with 1% m/v L-cysteine. This solution was used for organic Hg determination. Inorganic Hg remaining in KBr solution was directly determined by chemical vapor generation electrothermal atomic absorption spectrometry. Mercury vapor generation from extracts was performed using 1 mol L - 1 HCl and 2.5% m/v NaBH 4 solutions and a batch chemical vapor generation system. Mercury vapor was collected on the gold gauze heated resistively at 80 °C and the atomization temperature was set at 650 °C. The selectivity of extraction was evaluated using liquid chromatography coupled to chemical vapor generation and determination by inductively coupled plasma mass spectrometry. The proposed method was applied for mercury analysis in shark, croaker and tuna fish tissues. Certified reference materials were used to check accuracy and the agreement was better than 95%. The characteristic mass was 60 pg and method limits of detection were 5, 1 and 1 ng g - 1 for organic, inorganic and total mercury, respectively. With the proposed method it was possible to analyze up to 2, 2 and 6 samples per hour for organic, inorganic and total Hg determination, respectively.

  12. Synthesis of diamond films by pulsed liquid injection chemical vapor deposition using a mixture of acetone and water as precursor

    Energy Technology Data Exchange (ETDEWEB)

    Apatiga, L.M., E-mail: apatiga@servidor.unam.m [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma deMexico, A.P. 1-1010, C.P. 76000 Queretaro, Qro (Mexico); Morales, J., E-mail: ippajmc@yahoo.com.m [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma deMexico, A.P. 1-1010, C.P. 76000 Queretaro, Qro (Mexico); Facultad de Ciencias Fisico Matematicas, Universidad Autonoma de Nuevo Leon, Av. Universidad S/N, C.P. 66450 San Nicolas Nuevo Leon (Mexico)

    2009-04-02

    A chemical vapor deposition reactor based on the flash evaporation of an organic liquid precursor was used to grow diamond films on Si substrates. An effective pulsed liquid injection mechanism consisting of an injector, normally used for fuel injection in internal combustion engines, injects micro-doses of the precursor to the evaporation zone at 280 {sup o}C and is instantly evaporated. The resulting vapor mixture is transported by a carrier gas to the high-temperature reaction chamber where the diamond nucleates and grows on the substrate surface at temperatures ranging from 750 to 850 {sup o}C. The injection frequency, opening time, number of pulses and other injector parameters are controlled by a computer-driven system. The diamond film morphology and structure were characterized by scanning electron microscopy and Raman spectroscopy. The as-deposited diamond films show a ball-shaped morphology with a grain size that varies from 100 to 400 nm, as well as the characteristic diamond Raman band at 1332 cm{sup -1}. The effects of the experimental parameters and operation principle on the diamond films quality are analyzed and discussed in terms of crystallinity, composition, structure, and morphology.

  13. Plasma-enhanced chemical vapor deposition of graphene on copper substrates

    Directory of Open Access Journals (Sweden)

    Nicolas Woehrl

    2014-04-01

    Full Text Available A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO2 substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm2. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.

  14. A chemically stable europium metal-organic framework for bifunctional chemical sensor and recyclable on-off-on vapor response

    Science.gov (United States)

    Wang, Dongbo; Liu, Jingjuan; Liu, Zhiliang

    2017-07-01

    A ratiometric luminescence sensing method is developed and makes the chemically stable Eu metal-organic framework to be the first bifunctional chemical sensor for Cd2+ and F- ions with naked-eye observation in the field of sensing applications utilizing luminescent Ln-MOFs. This is the first example of luminescent colorimetric sensor caused by the direct dual emissions of a single Ln-MOF. A recyclable vapoluminescent sensor for HCl and NH3 by the naked eye has also been realized.

  15. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hanearl [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Doyoung [School of Electrical and Electronic Engineering, Ulsan College, 57 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2014-04-01

    Highlights: • Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. • Effects of Ga doping using TMGa in Ga doped ZnO were investigated. • Degraded properties from excessive doping were analyzed using chemical bondings. - Abstract: The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O{sub 2} gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O{sub 2} ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O{sub 2} from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10{sup −3} Ω cm for undoped ZnO to 2.05 × 10{sup −3} Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

  16. Heat flow in vapor dominated areas of the Yellowstone Plateau volcanic field: implications for the thermal budget of the Yellowstone Caldera

    Science.gov (United States)

    Hurwitz, Shaul; Harris, Robert; Werner, Cynthia Anne; Murphy, Fred

    2012-01-01

    Characterizing the vigor of magmatic activity in Yellowstone requires knowledge of the mechanisms and rates of heat transport between magma and the ground surface. We present results from a heat flow study in two vapor dominated, acid-sulfate thermal areas in the Yellowstone Caldera, the 0.11 km2 Obsidian Pool Thermal Area (OPTA) and the 0.25 km2 Solfatara Plateau Thermal Area (SPTA). Conductive heat flux through a low permeability layer capping large vapor reservoirs is calculated from soil temperature measurements at >600 locations and from laboratory measurements of soil properties. The conductive heat output is 3.6 ± 0.4 MW and 7.5 ± 0.4 MW from the OPTA and the SPTA, respectively. The advective heat output from soils is 1.3 ± 0.3 MW and 1.2 ± 0.3 MW from the OPTA and the SPTA, respectively and the heat output from thermal pools in the OPTA is 6.8 ± 1.4 MW. These estimates result in a total heat output of 11.8 ± 1.4 MW and 8.8 ± 0.4 MW from OPTA and SPTA, respectively. Focused zones of high heat flux in both thermal areas are roughly aligned with regional faults suggesting that faults in both areas serve as conduits for the rising acid vapor. Extrapolation of the average heat flux from the OPTA (103 ± 2 W·m−2) and SPTA (35 ± 3 W·m−2) to the ~35 km2 of vapor dominated areas in Yellowstone yields 3.6 and 1.2 GW, respectively, which is less than the total heat output transported by steam from the Yellowstone Caldera as estimated by the chloride inventory method (4.0 to 8.0 GW).

  17. Polymer layers by initiated chemical vapor deposition for thin film gas barrier encapsulation

    NARCIS (Netherlands)

    Spee, D.A.|info:eu-repo/dai/nl/325843090; Bakker, R.|info:eu-repo/dai/nl/304826677; van der Werf, C.H.M.; van Steenbergen, M.J.|info:eu-repo/dai/nl/304839302; Rath, J.K.|info:eu-repo/dai/nl/304830585; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2011-01-01

    A combination of SiNx and polymer layers, in our case poly(glycidyl methacrylate) (PGMA) is very suitable as a permeation barrier layer on sensitive electronic devices. Our experiments thus far concentrate on increasing the stability and deposition rate of the polymer layers. To reach the thermal

  18. Chemical Vapor Sensing Using Dual Channel Hybrid Organic/Inorganic Field-Effect Transistors

    Science.gov (United States)

    Lewis, Shannon; Schoefer, Sebastian; Sharma, Deepak; Dodabalapur, Ananth

    2008-03-01

    We have developed a field-effect chemical sensing device architecture in which two semiconducting channels are employed, one of which is exposed to the analyte and is chemically sensitive. The second channel (usually silicon) is used for signal transduction/amplification. Such sensors work can work in many device modes including one that can be described as a ``chemical memory mode''. For the chemically sensitive channel, several classes of materials can be employed including small molecule organic semiconductors, conjugated polymers, and inorganic oxides such as SnOx. With organic semiconductor channels, it is possible to demonstrate charge trapping of volatile organic molecules with significant dipole moments such as ketones and alcohols. We will describe the physics of operation of such sensors in various modes and also outline how the selectivity/sensitivity can be enhanced by incorporating organic receptors.

  19. Amorphous silicon-carbon nanospheres synthesized by chemical vapor deposition using cheap methyltrichlorosilane as improved anode materials for Li-ion batteries.

    Science.gov (United States)

    Zhang, Zailei; Zhang, Meiju; Wang, Yanhong; Tan, Qiangqiang; Lv, Xiao; Zhong, Ziyi; Li, Hong; Su, Fabing

    2013-06-21

    We report the preparation and characterization of amorphous silicon-carbon (Si-C) nanospheres as anode materials in Li-ion batteries. These nanospheres were synthesized by a chemical vapor deposition at 900 °C using methyltrichlorosilane (CH3SiCl3) as both the Si and C precursor, which is a cheap byproduct in the organosilane industry. The samples were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, nitrogen adsorption, thermal gravimetric analysis, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the synthesized Si-C nanospheres composed of amorphous C (about 60 wt%) and Si (about 40 wt%) had a diameter of 400-600 nm and a surface area of 43.8 m(2) g(-1). Their charge capacities were 483.6, 331.7, 298.6, 180.6, and 344.2 mA h g(-1) at 50, 200, 500, 1000, and 50 mA g(-1) after 50 cycles, higher than that of the commercial graphite anode. The Si-C amorphous structure could absorb a large volume change of Si during Li insertion and extraction reactions and hinder the cracking or crumbling of the electrode, thus resulting in the improved reversible capacity and cycling stability. The work opens a new way to fabricate low cost Si-C anode materials for Li-ion batteries.

  20. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    KAUST Repository

    Hwang, David

    2017-12-13

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  1. InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

    Science.gov (United States)

    Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, Hongqi; Yang, Tao

    2017-06-01

    We report the growth of InAs/GaSb core-shell heterostructure nanowires with smooth sidewalls on Si substrates using metal-organic chemical vapor deposition (MOCVD) with no assistance from foreign catalysts. Sb adatoms were observed to strongly influence the morphology of the GaSb shell. In particular, Ga droplets form on the nanowire tips when a relatively low TMSb flow rate is used, whereas the droplets are missing and the radial growth of the GaSb is enhanced due to a reduction in the diffusion length of the Ga adatoms when the TMSb flow rate is increased. Moreover, transmission electron microscopy measurements revealed that the GaSb shell coherently grew on the InAs core without any misfit dislocations.

  2. Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kratzer, Markus, E-mail: markus.kratzer@unileoben.ac.at; Teichert, Christian [Institute of Physics, Montanuniversitaet Leoben, Franz Josef Straße 18, A 8700 Leoben (Austria); Bayer, Bernhard C. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Faculty of Physics, University of Vienna, Boltzmanngasse 5, A 1090 Vienna (Austria); Kidambi, Piran R. [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Matković, Aleksandar; Gajić, Radoš [Institute of Physics, Department for Solid State Physics and New Materials, University of Belgrade, Pregrevica 118, 11080 Belgrade (Serbia); Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Hofmann, Stephan [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2015-03-09

    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H{sub 2} annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.

  3. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2

    Directory of Open Access Journals (Sweden)

    Rajesh Kappera

    2014-09-01

    Full Text Available Two dimensional transition metal dichalcogenides (2D TMDs offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS2. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS2 on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.

  4. Ultraviolet to violet lasing from CdxZn1-xO microdisks produced by chemical vapor deposition

    Science.gov (United States)

    Chen, Zuxin; Chen, Xuechen; Chu, Sheng; Peng, Rufang

    2017-10-01

    High quality (HQ) hexagonal CdxZn1-xO microdisks, with bandgap from 3.02 eV to 3.22 eV, are grown by chemical vapor deposition (CVD). Structural and composition analyses indicate that the microdisks have hexagonal shape, single crystalline and tunable Cd concentration. By optical pumping, the microdisk functions as whispering-gallery-mode (WGM) resonator. Lasing from ultravoilet (UV, 385 nm) to violet (410 nm) is demonstrated at room temperature. The HQ factor (1283) is observed, only because of the WGM type resonance. The results demonstrate that the lasing characteristics of WGM cavity from CdxZn1-xO microdisks show promising applications in low threshold violet lasers and light emitting devices.

  5. On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    M. Aceves-Mijares

    2012-01-01

    Full Text Available Silicon Rich Oxide (SRO has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD. In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

  6. Room Temperature Ferromagnetism of (Mn,Fe Codoped ZnO Nanowires Synthesized by Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Yongqin Chang

    2011-01-01

    Full Text Available (Mn,Fe codoped ZnO nanowires were synthesized on silicon substrates in situ using a chemical vapor deposition method. The structure and property of the products were investigated by X-ray, electron microscopy, Raman, photoluminescence, and superconducting quantum interference device magnetometer. The doped nanowires are of pure wurtzite phase with single crystalline, and the elements distribute homogeneously in the doped nanowires. Photoluminescence spectrum of the doped nanowires is dominated by a deep-level emission with a negligible near-band-edge emission. The magnetic hysteresis curve with a coercive field of 35 Oe is clearly observed at 300 K, resulting from room-temperature ferromagnetic ordering in the (Mn,Fe codoped ZnO nanowires, which has great potential applications for spintronics devices.

  7. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

    Science.gov (United States)

    Oshima, Takayoshi; Niwa, Mifuyu; Mukai, Akira; Nagami, Tomohito; Suyama, Toshihisa; Ohtomo, Akira

    2014-01-01

    ZnGa2O4 films were grown on (100) MgAl2O4 substrates by mist chemical vapor deposition. A growth window for obtaining single spinel phase was revealed by systematic variations of precursor Zn/Ga ratio and growth temperature, where the cation stoichiometry was maintained through sublimation of excess Zn species before crystalized into ZnO. The epitaxial relationship to the substrate was identified to be cube on cube with no rotation domain. The optical properties of the fully relaxed film were characterized by using cathodoluminescence (CL) and absorption spectroscopies. A large Stokes shift was found between the CL peak energy (3.4 eV) and fundamental absorption edge (4.6 eV), reflecting typical property of Ga-based wide-band-gap oxide semiconductors.

  8. Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactor

    Science.gov (United States)

    Bekdüz, B.; Beckmann, Y.; Meier, J.; Rest, J.; Mertin, W.; Bacher, G.

    2017-05-01

    The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a complex interplay of substrate preparation, substrate temperature, pressure and flow of reactive gases. A large variety of recipes have been suggested in literature, often quite specific to the reactor, which is being used. Here, we report on a relation between growth rate and quality of graphene grown in a scalable 4″ CVD reactor. The growth rate is varied by substrate pre-treatment, chamber pressure, and methane to hydrogen (CH4:H2) ratio, respectively. We found that at lower growth rates graphene grains become hexagonal rather than randomly shaped, which leads to a reduced defect density and a sheet resistance down to 268 Ω/sq.

  9. Chemical Vapor Deposited Graphene-Based Derivative As High-Performance Hole Transport Material for Organic Photovoltaics.

    Science.gov (United States)

    Capasso, Andrea; Salamandra, Luigi; Faggio, Giuliana; Dikonimos, Theodoros; Buonocore, Francesco; Morandi, Vittorio; Ortolani, Luca; Lisi, Nicola

    2016-09-14

    The development of efficient charge transport layers is a key requirement for the fabrication of efficient and stable organic solar cells. A graphene-based derivative with planar resistivity exceeding 10(5) Ω/□ and work function of 4.9 eV is here produced by finely tuning the parameters of the chemical vapor deposition process on copper. After the growth, the film is transferred to glass/indium tin oxide and used as hole transport layer in organic solar cells based on a PBDTTT-C-T:[70]PCBM blend. The cells attained a maximum power conversion efficiency of 5%, matching reference cells made with state-of-the-art PSS as the hole transport layer. Our results indicate that functionalized graphene could represent an effective alternative to PSS as hole transport/electron blocking layer in solution-processed organic photovoltaics.

  10. Origin of donor and acceptor species in undoped ZnSe grown by low-pressure metalorganic chemical vapor deposition

    Science.gov (United States)

    Morimoto, Keizo

    1988-11-01

    Effects of the [H2 Se]/[Dimethylzinc] source ratio on the electrical properties in the temperature range of 15-300 K and on the cathodoluminescence properties at 77 K have been investigated for undoped ZnSe films grown in one deposition run on (100)GaAs substrates at 350 °C by metalorganic chemical vapor deposition. The properties correlated with each other and depended on the degrees of deviation from stoichiometry. The dominant donor is identified with selenium vacancy from the dependence of donor concentration on the ratio and on the film thickness. Two kinds of acceptors were introduced according to the deviation from stoichiometry. They are tentatively associated with NSe and NaZn . Extended lattice defects which reduce the electron mobility are favored at the high ratios and they seem a principal factor of the high-resistive property of this material.

  11. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hart, John, E-mail: hartjt@udel.edu [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States); Hazbun, Ramsey; Eldridge, David; Hickey, Ryan [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States); Fernando, Nalin [Department of Physics, University of New Mexico, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003-8001 (United States); Adam, Thomas [College of Nanoscale Science and Engineering, SUNY, New York 12203 (United States); Zollner, Stefan [Department of Physics, University of New Mexico, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003-8001 (United States); Kolodzey, James [Department of Electrical Engineering, University of Delaware, 140 Evans Hall, Newark, DE 19716 (United States)

    2016-04-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak.

  12. Causal knowledge extraction by natural language processing in material science: a case study in chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Yuya Kajikawa

    2006-11-01

    Full Text Available Scientific publications written in natural language still play a central role as our knowledge source. However, due to the flood of publications, the literature survey process has become a highly time-consuming and tangled process, especially for novices of the discipline. Therefore, tools supporting the literature-survey process may help the individual scientist to explore new useful domains. Natural language processing (NLP is expected as one of the promising techniques to retrieve, abstract, and extract knowledge. In this contribution, NLP is firstly applied to the literature of chemical vapor deposition (CVD, which is a sub-discipline of materials science and is a complex and interdisciplinary field of research involving chemists, physicists, engineers, and materials scientists. Causal knowledge extraction from the literature is demonstrated using NLP.

  13. Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Hwang, David; Mughal, Asad J.; Wong, Matthew S.; Alhassan, Abdullah I.; Nakamura, Shuji; DenBaars, Steven P.

    2018-01-01

    Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10‑5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.

  14. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    Directory of Open Access Journals (Sweden)

    Prashanta Dhoj Adhikari

    2014-01-01

    Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

  15. Pressure dependence of in situ boron-doped silicon films prepared by low-pressure chemical vapor deposition. II. Resistivity

    Science.gov (United States)

    Haji, L.; Hamedi, L.; Loisel, B.; Gauneau, M.; Joubert, P.; Sarret, M.

    1989-11-01

    The effects of silane pressure and temperature on the in situ boron incorporation and resistivity of low-pressure chemical vapor deposited polycrystalline silicon films were studied in the ranges of 2.5×10-3-1 Torr and 515-700 °C. By lowering the silane pressure, the boron concentration increases (up to 1×1022 cm-3) and the resistivity decreases down to about 2×10-3 Ω cm without annealing. For high deposition pressure (≥0.1 Torr), the resistivity decreases as the temperature is lowered. In this latter case the secondary-ion mass spectrometry profiles reveal a boron accumulation at the layer-substrate interface, which is always observed independently of the substrate nature.

  16. Pressure dependence of in situ boron-doped silicon films prepared by low-pressure chemical vapor deposition. I. Microstructure

    Science.gov (United States)

    Joubert, P.; Sarret, M.; Haji, L.; Hamedi, L.; Loisel, B.

    1989-11-01

    In situ boron-doped silicon films have been deposited by the low-pressure chemical vapor deposition technique in the pressure and temperature ranges of 1-2.5×10-3 Torr and 515-700 °C, respectively. These films have been investigated by means of x-ray diffraction and transmission electron microscopy in order to study the influence of the silane partial pressure and deposition temperature on the microstructure of the doped films. X-ray experiments combined with gradual etching were performed in order to check the in-depth distribution of the crystallite textures. The microstructure of the boron-doped and undoped polysilicon films are compared.

  17. Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

    Science.gov (United States)

    Jeon, Hye-ji; Lee, Seul-Gi; Kim, H.; Park, Jin-Seong

    2014-05-01

    Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ˜100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.

  18. The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells

    Science.gov (United States)

    Chen, Bitao; Zhang, Yingke; Ouyang, Qiuping; Chen, Fei; Zhan, Xinghua; Gao, Wei

    2017-07-01

    SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3 passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

  19. Sensitivity of chemical vapor deposition diamonds to DD and DT neutrons at OMEGA and the National Ignition Facility

    Science.gov (United States)

    Kabadi, N. V.; Sio, H.; Glebov, V.; Gatu Johnson, M.; MacPhee, A.; Frenje, J. A.; Li, C. K.; Seguin, F.; Petrasso, R.; Forrest, C.; Knauer, J.; Rinderknecht, H. G.

    2016-11-01

    The particle-time-of-flight (pTOF) detector at the National Ignition Facility (NIF) is used routinely to measure nuclear bang-times in inertial confinement fusion implosions. The active detector medium in pTOF is a chemical vapor deposition diamond. Calibration of the detectors sensitivity to neutrons and protons would allow measurement of nuclear bang times and hot spot areal density (ρR) on a single diagnostic. This study utilizes data collected at both NIF and Omega in an attempt to determine pTOF's absolute sensitivity to neutrons. At Omega pTOF's sensitivity to DT-n is found to be stable to within 8% at different bias voltages. At the NIF pTOF's sensitivity to DD-n varies by up to 59%. This variability must be decreased substantially for pTOF to function as a neutron yield detector at the NIF. Some possible causes of this variability are ruled out.

  20. Role of defects in tuning the electronic properties of monolayer WS{sub 2} grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jie; Zheliuk, Oleksandr; Lu, Jianming; Ye, Jianting [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Gordiichuk, Pavlo [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Department of Chemistry, Northwestern University, Evanston, IL (United States); Herrmann, Andreas [Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands); Molecular Biophysics, Department of Biology, Humboldt-Universitaet Berlin (Germany)

    2017-10-15

    Two-dimensional transition metal dichalcogenides have already attracted enormous research interest. To understand the dependence of electronic properties on the quality and defect morphology is vital for synthesizing high quality materials and the realization of functional devices. Here, we demonstrate the mapping of the conductive variations by conducting atomic force microscopy (C-AFM) in the monolayer tungsten disulfide (WS{sub 2}) grown by chemical vapor deposition. The electronic properties are strongly affected by the formation of vacancies in monolayer WS{sub 2} during growth, which is also verified by the photoluminescence. This spatial study of defects provides opportunities for optimization of the growth process for enhancing devices performance of TMDs monolayers. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)