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Sample records for thermal annealing effect

  1. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  2. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  3. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  4. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  5. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  6. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  7. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  8. Effect of thermal annealing on property changes of neutron-irradiated non-graphitized carbon materials and nuclear graphite

    International Nuclear Information System (INIS)

    Matsuo, Hideto

    1991-06-01

    Changes in dimension of non-graphitized carbon materials and nuclear graphite, and the bulk density, electrical resistivity, Young's modulus and thermal expansivity of nuclear graphite were studied after neutron irradiation at 1128-1483 K and the successive thermal annealing up to 2573 K. Carbon materials showed larger and anisotropic dimensional shrinkage than that of nuclear graphite after the irradiation. The irradiation-induced dimensional shrinkage of carbon materials decreased during annealing at temperatures from 1773 to 2023 K, followed by a slight increase at higher temperatures. On the other hand, the irradiated nuclear graphite hardly showed the changes in length, density and thermal expansivity under the thermal annealing, but the electrical resistivity and Young's modulus showed a gradual decrease with annealing temperature. It has been clarified that there exists significant difference in the effect of thermal annealing on irradiation-induced dimensional shrinkage between graphitized nuclear graphite and non-graphitized carbon materials. (author)

  9. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  10. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  11. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1996-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  12. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  13. Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

    International Nuclear Information System (INIS)

    Wu, K.-M.; Wang, Y.-H.; Chen, Wei-Chuan; Yang, S.-Y.; Shen, Kuei-Hung; Kao, M.-J.; Tsai, M.-J.; Kuo, C.-Y.; Wu, J.-C.; Horng, Lance

    2007-01-01

    Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co 60 Fe 20 B 20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 deg. C to 250 deg. C . Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 deg. C rapid annealing and still shows about 25% TMR even after 400 deg. C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature

  14. Organic products from Ca14Co3 autoradiolysis: effects of thermal annealing

    International Nuclear Information System (INIS)

    Albarran S, M.G.; Collins, K.E.; Collins, C.H.

    1986-01-01

    Autoradiolysis of Ca 14 Co 3 produces several different low molecular mass organic compounds which can be conveniently observed after ion exclusion-partition chromatographic separation of the dissolved sample, provided that the solid was prepared with high specific activity carbon-14 and has been stored for a sufficiently long period. Subsequent thermal annealing changes the distribution of these observed compounds, demonstrating that chemical reactions of the precursor species take place in the solid Ca 14 Co 3 matrix. Specifically, the following products were observed after an autoradiolytic dose of 5 MGy: methanol, formaldehyde, formic acid, oxalic acid, glyoxylic acid, glycolic acid and acetic acid, with-G-values ranging from 5x10 -6 to 2x10 -3 . Isochronal annealing to 500 0 C markedly changes the yields of carbon-14 labelled formic and acetic acids but has lesser effects on the other acidic products. This indicates that several different precursor species are present in the autoradiolyzed solid. (Author) [pt

  15. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  16. The effect of low temperature neutron irradiation and annealing on the thermal conductivity of advanced carbon-based materials

    International Nuclear Information System (INIS)

    Barabash, V.; Mazul, I.; Latypov, R.; Pokrovsky, A.; Wu, C.H.

    2002-01-01

    Several carbon-based materials (carbon fibre composites NB 31, NS 31 and UAM-92, doped graphite RGTi-91), were irradiated at about 90 deg. C in the damage dose range 0.0021-0.13 dpa. Significant reduction of the thermal conductivity of all materials was observed (e.g. at damage dose of ∼0.13 dpa the thermal conductivity degraded up to level of ∼2-3% of the initial values). However, saturation of this effect was observed starting at a dose of ∼0.06 dpa. The effect of annealing at 250 and 350 deg. C on the recovery of thermal conductivity of NB 31 and NS 31 was studied and it was shown this annealing can significantly improve thermal conductivity (∼2.5-3 times). The data on the degradation of the thermal conductivity after additional irradiation after annealing is also reported

  17. Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Gorkem Memisoglu

    2012-01-01

    Full Text Available A solution-processed organic ultraviolet photodetector (UV-PD is introduced. The active layer of the UV-PD consists of poly(9,9-dioctyl fluorenyl-2,7–yleneethynylene (PFE and N,N′-bis-n-butyl-1,4,5,8- naphthalenediimide (BNDI with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80∘C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm2 UV light at 368 nm when 60∘C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.

  18. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1994-01-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

  19. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  20. Thermal annealing and pressure effects on BaFe2-xCoxAs2 single crystals.

    Science.gov (United States)

    Shin, Dongwon; Jung, Soon-Gil; Prathiba, G; Seo, Soonbeom; Choi, Ki-Young; Kim, Kee Hoon; Park, Tuson

    2017-11-26

    We investigate the pressure and thermal annealing effects on BaFe2-xCoxAs2 (Co-Ba122) single crystals with x = 0.1 and 0.17 via electrical transport measurements. The thermal annealing treatment not only enhances the superconducting transition temperature (Tc) from 9.6 to 12.7 K for x = 0.1 and from 18.1 to 21.0 K for x = 0.17, but also increases the antiferromagnetic transition temperature (TN). Simultaneous enhancement of Tc and TN by the thermal annealing treatment indicates that thermal annealing could substantially improve the quality of the Co-doped Ba122 samples. Interestingly, Tc of the Co-Ba122 compounds shows a scaling behavior with a linear dependence on the resistivity value at 290 K, irrespective of tuning parameters, such as chemical doping, pressure, and thermal annealing. These results not only provide an effective way to access the intrinsic properties of the BaFe2As2 system, but also may shed a light on designing new materials with higher superconducting transition temperature. © 2017 IOP Publishing Ltd.

  1. Effects of thermal annealing on C/FePt granular multilayers: in situ and ex situ studies

    International Nuclear Information System (INIS)

    Babonneau, D; Abadias, G; Toudert, J; Girardeau, T; Fonda, E; Micha, J S; Petroff, F

    2008-01-01

    The comprehensive study of C/FePt granular multilayers prepared by ion-beam sputtering at room temperature and subsequent annealing is reported. The as-deposited multilayers consist of carbon-encapsulated FePt nanoparticles (average size ∼3 nm) with a disordered face-centered-cubic structure. The effects of thermal annealing on the structural and magnetic properties are investigated by using dedicated ex situ and in situ techniques, including high-resolution transmission electron microscopy, extended x-ray absorption fine structure, magnetometry, and coupled grazing incidence small-angle x-ray scattering and x-ray diffraction. Our structural data show that the particle size and interparticle distance increase slightly with annealing at temperatures below 790 K by thermally activated migration of Fe and Pt atoms. We find that thermal annealing at temperatures above 870 K results in the dramatic growth of the FePt nanoparticles by coalescence and their gradual L1 0 ordering. In addition, we observe a preferential graphitization of the carbon matrix, which provides protection against oxidation for the FePt nanoparticles. Magnetization measurements indicate that progressive magnetic hardening occurs after annealing. The dependences of the blocking temperature, saturation magnetization, coercivity, and magnetocrystalline anisotropy energy on the annealing temperature are discussed on the basis of the structural data

  2. Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

    International Nuclear Information System (INIS)

    Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

    2012-01-01

    The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

  3. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

    Science.gov (United States)

    2013-01-01

    Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

  4. Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M

    2015-01-01

    The effect of post-growth rapid thermal annealing on structural and optical properties of InP 1−x Bi x thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions. (paper)

  5. Effect of thermal annealing on optical properties of implanted GaAs

    NARCIS (Netherlands)

    Kulik, M; Komarov, FF; Maczka, D

    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

  6. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.

    2012-05-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  7. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.; Koros, William J.; Johnson, J.R.; Karvan, Oguz

    2012-01-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  8. Annealing effect on thermal conductivity and microhardness of carbon nanotube containing Se80Te16Cu4 glassy composites

    Science.gov (United States)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2018-02-01

    This study deals with the effect of thermal annealing on structural/microstructural, thermal and mechanical behavior of pristine Se80Te16Cu4 and carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composites. Pristine Se80Te16Cu4, 3 and 5 wt%CNTs-Se80Te16Cu4 glassy composites are annealed in the vicinity of glass transition temperature to onset crystallization temperature (340-380 K). X-ray diffraction (XRD) pattern revealed formation of polycrystalline phases of hexagonal CuSe and trigonal selenium. The indexed d-values in XRD patterns are in well conformity with the d-values obtained after the indexing of the ring pattern of selected area electron diffraction pattern of TEM images. The SEM investigation exhibited that the grain size of the CNTs containing Se80Te16Cu4 glassy composites increased with increasing annealing temperature and decreased at further higher annealing temperature. Thermal conductivity, microhardness exhibited a substantial increase with increasing annealing temperature of 340-360 K and slightly decreases for 380 K. The variation of thermal conductivity and microhardness can be explained by cross-linking formation and voids reduction.

  9. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  10. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  11. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric

    2010-08-18

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric; Mondal, Rajib; Bettinger, Christopher J.; Sok, Seihout; Toney, Michael F.; Bao, Zhenan

    2010-01-01

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-09-01

    We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

  14. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    Science.gov (United States)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  15. Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

    International Nuclear Information System (INIS)

    Kim, Jonggi; Lee, Kyumin; Kim, Yonjae; Na, Heedo; Ko, Dae-Hong; Sohn, Hyunchul; Lee, Sunghoon

    2013-01-01

    In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO 2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO 2 films in the Pt/ZrO 2 /TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO 2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO x N y layer between the ZrO 2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiO x N y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching. - Highlights: • Effect of thermal annealing on resistive switching of ZrO 2 was investigated. • Both unipolar and bipolar switching were shown in the Pt/ZrO 2 /TiN stack. • TiO x N y interface layer was enlarged with increasing annealing temperature. • TiO x N y interface plays an important role in resistive switching properties

  16. Effect of thermal annealing treatment with titanium chelate on buffer layer in inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhiyong [College of Science, Shenyang Agricultural University, Shenyang 110866 (China); Wang, Ning, E-mail: ning_wang@outlook.com [School of Electrical and Electronic and Engineering, Nanyang Technological University 639798 (Singapore); Fu, Yan, E-mail: 1060945062@qq.com [College of Science, Shenyang Agricultural University, Shenyang 110866 (China)

    2016-12-15

    Highlights: • The TIPD layer as electron extraction layer and instead of Ca or LiF. • Impact of the work function of TIPD layer by thermal annealing treatment. • Importance of TIPD layer as electron extraction layer for work function and potential barrier. - Abstract: The solution processable electron extraction layer (EEL) is crucial for polymer solar cells (PSCs). Here, we investigated titanium (diisopropoxide) bis(2,4-pentanedionate) (TIPD) as an EEL and fabricated inverted PSCs with a blend of poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) acting as the photoactive layer, with a structure of ITO/TIPD/P3HT:ICBA/MoO{sub 3}/Ag. After thermal annealing treatment at 150 °C for 15 min, the PSC performances increased from 3.85% to 6.84% and they achieve stable power conversion efficiency (PCE), with a similar PCE compared with TiO{sub 2} as an EEL by the vacuum evaporated method. Fourier transform infrared spectroscopy (FTIR) and ultraviolet photoelectron spectroscopy (UPS) confirmed that the TIPD decomposed and formed the Ti=O bond, and the energy level of the lowest unoccupied molecular orbital and the highest occupied molecular orbital increased. The space charge limited current (SCLC) measurements further confirmed the improvement in electron collection and the transport ability using TIPD as the EEL and thermal annealing.

  17. Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, R. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg, 26111 Oldenburg (Germany); Kirilov, Kiril [Department of Solid State Physics and Microelectronics, Sofia Univ. (Bulgaria); Levi, Zelma; Manolov, E. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nedev, N. [Instituto de Ingenieria Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico (Mexico)

    2007-07-01

    Silicon nanocrystals embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 1000 C in N{sub 2} atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the {+-}12 V scanning range (E{sub ox}={+-}2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO{sub 2} interface and a smaller value of the fixed oxide charge close to this interface.

  18. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  19. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  20. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500°C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H.

  1. All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

    Science.gov (United States)

    Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

    2018-01-01

    We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

  2. Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

    International Nuclear Information System (INIS)

    Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

    2006-01-01

    We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

  3. Effects of Annealing Conditions on Mixed Lead Halide Perovskite Solar Cells and Their Thermal Stability Investigation.

    Science.gov (United States)

    Yang, Haifeng; Zhang, Jincheng; Zhang, Chunfu; Chang, Jingjing; Lin, Zhenhua; Chen, Dazheng; Xi, He; Hao, Yue

    2017-07-21

    In this work, efficient mixed organic cation and mixed halide (MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃) perovskite solar cells are demonstrated by optimizing annealing conditions. AFM, XRD and PL measurements show that there is a better perovskite film quality for the annealing condition at 100 °C for 30 min. The corresponding device exhibits an optimized PCE of 16.76% with V OC of 1.02 V, J SC of 21.55 mA/cm² and FF of 76.27%. More importantly, the mixed lead halide perovskite MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃ can significantly increase the thermal stability of perovskite film. After being heated at 80 °C for 24 h, the PCE of the MA 0.7 FA 0.3 Pb(I 0.9 Br 0.1 )₃ device still remains at 70.00% of its initial value, which is much better than the control MAPbI₃ device, where only 46.50% of its initial value could be preserved. We also successfully fabricated high-performance flexible mixed lead halide perovskite solar cells based on PEN substrates.

  4. Thermal Annealing Effect on Poly(3-hexylthiophene: Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

    Directory of Open Access Journals (Sweden)

    H. Derouiche

    2013-01-01

    Full Text Available We have fabricated poly(3-hexylthiophene (P3HT/copper phthalocyanine (CuPc/fullerene (C60 ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO/poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT/PSS photoanode and a bathocuproine (BCP/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

  5. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  6. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  7. Modeling the effects of ion dose and crystallographic symmetry on the morphological evolution of embedded precipitates under thermal annealing

    International Nuclear Information System (INIS)

    Li, Kun-Dar

    2014-01-01

    Highlights: •We model the faceted precipitates formation by post-implantation annealing. •The anisotropic interfacial energy and diffusion kinetics play crucial roles. •The evolutions of faceted precipitates, including Ostwald ripening, are revealed. •The mechanism of the nucleation and growth is based on the atomic diffusion. •The effects of ion dose and crystallographic symmetry are also investigated. -- Abstract: Thermal annealing is one of the most common techniques to synthesize embedded precipitates by ion implantation process. In this study, an anisotropic phase field model is presented to investigate the effects of ion dose and crystallographic symmetry on the morphological formation and evolution of embedded precipitates during post-implantation thermal annealing process. This theoretical model provides an efficient numerical approach to understand the phenomenon of faceted precipitates formation by ion implantation. As a theoretical analysis, the interfacial energy and diffusion kinetics play prominent roles in the mechanism of atomic diffusion for the precipitates formation. With a low ion dose, faceted precipitates are developed by virtue of the anisotropic interfacial energy. As an increase of ion dose, connected precipitates with crystallographic characters on the edge are appeared. For a high ion dose, labyrinth-like nanostructures of precipitates are produced and the characteristic morphology of crystallographic symmetry becomes faint. These simulation results for the morphological evolutions of embedded precipitates by ion implantation are corresponded with many experimental observations in the literatures. The quantitative analyses of the simulations are also well described the consequence of precipitates formation under different conditions

  8. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  9. Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

    Energy Technology Data Exchange (ETDEWEB)

    Oniya, Ebenezer O., E-mail: ebenezer.oniya@aaua.edu.ng [Physics and Electronics Department, Adekunle Ajasin University, 342111 Akungba Akoko (Nigeria); Polymeris, George S. [Institute of Nuclear Sciences, Ankara University, Beşevler 06100, Ankara (Turkey); Jibiri, Nnamdi N. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Tsirliganis, Nestor C. [Department of Archaeometry and Physicochemical Measurements, R.C. ‘Athena’, P.O. Box 159, Kimmeria University Campus, 67100 Xanthi (Greece); Babalola, Israel A. [Department of Physics, University of Ibadan, Ibadan (Nigeria); Kitis, George [Nuclear Physics Laboratory, Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2017-06-01

    The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

  10. Pure thermal sensitisation and pre-dose effect of OSL in both unfired and annealed quartz samples

    International Nuclear Information System (INIS)

    Oniya, Ebenezer O.; Polymeris, George S.; Jibiri, Nnamdi N.; Tsirliganis, Nestor C.; Babalola, Israel A.; Kitis, George

    2017-01-01

    The sensitisation of quartz has attracted much attention since its thorough understanding is important in luminescence studies and dating applications. The present investigation examines the influence of pure thermal activation and predose treatments on the sensitisation of different components of linearly modulated optically stimulated luminescence (LM-OSL) measured at room temperature (RT) thereby eliminating undesired thermal quenching effects. Annealed and unfired quartz samples from Nigeria were used. The OSL measurements were carried out using an automated RISØTL/OSL reader (model-TL/OSL–DA–15). A new approach was adopted to match each of the resolved components of the RT-LM-OSL to respective thermoluminescence (TL) peaks that share the same electron trap and recombination centers. Pure thermal activation and pre-dose treatments respectively affect the sensitisation of all the components of the RT-LM-OSL in a similar manner as the one reported for the 110 °C TL peak but without thermal quenching contributions. Component C4 in annealed samples that was identified to share the same electron trap and recombination centers with the 110 °C TL peak was also proved appropriate for RT-LM-OSL, instead of the initial part of the continuous wave (CW) OSL signal, thus the methods can serve as complementary dating methods.

  11. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    International Nuclear Information System (INIS)

    Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

    2009-01-01

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  12. Time effects in the thermal annealing of Fe/V multilayers

    CERN Document Server

    Borges, J F M

    2003-01-01

    We report a study on the structural and magnetic properties of iron-vanadium thin films grown in multilayer form and mixed by thermal treatment. The multilayer samples were annealed at 610 deg. C for times ranging from 10 to 540 min. The samples were structurally characterized by means of x-ray diffraction (XRD) and by x-ray absorption spectroscopy (XAS). The magnetic characterization was carried out with a conventional alternating gradient magnetometer (AGM) and by conversion electron Moessbauer spectroscopy (CEMS). The XRD result for the as-deposited multilayer shows a high degree of crystallinity while the CEMS result suggests an abrupt interface, since no significant contribution from vanadium in iron is observed. After the thermal treatment, the results from XRD show a phase transformation of the disordered body-centred-cubic structure (alpha-phase) into a tetragonal structure (sigma-phase) and a subsequent return to the alpha-phase. This alpha-sigma-alpha oscillation is not reported in the literature av...

  13. Response of neutron-irradiated RPV steels to thermal annealing

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

  14. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  15. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  16. Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell

    Directory of Open Access Journals (Sweden)

    Lifei Yang

    2015-01-01

    Full Text Available Graphene-silicon (Gr-Si Schottky solar cell has attracted much attention recently as promising candidate for low-cost photovoltaic application. For the fabrication of Gr-Si solar cell, the Gr film is usually transferred onto the Si substrate by wet transfer process. However, the impurities induced by this process at the graphene/silicon (Gr/Si interface, such as H2O and O2, degrade the photovoltaic performance of the Gr-Si solar cell. We found that the thermal annealing process can effectively improve the photovoltaic performance of the Gr-Si solar cell by removing these impurities at the Gr/Si interface. More interestingly, the photovoltaic performance of the Gr-Si solar cell can be improved, furthermore, when exposed to air environment after the thermal annealing process. Through investigating the characteristics of the Gr-Si solar cell and the properties of the Gr film (carrier density and sheet resistance, we point out that this phenomenon is caused by the natural doping effect of the Gr film.

  17. Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

    International Nuclear Information System (INIS)

    Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

    2011-01-01

    Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

  18. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  19. Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

    International Nuclear Information System (INIS)

    Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

  20. Effect of thermal annealing on the properties of transparent conductive In–Ga–Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ling [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049, China and School of Information Science and Engineering, Shandong University, Jinan 250100 (China); Fan, Lina; Li, Yanhuai; Song, Zhongxiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Chunliang, E-mail: mafei@mail.xjtu.edu.cn, E-mail: chlliu@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi' an 710049 (China)

    2014-03-15

    Amorphous In–Ga–Zn oxide (IGZO) thin films were prepared using radio frequency magnetron sputtering at room temperature. Upon thermal annealing at temperatures even up to 500 °C, the amorphous characteristics were still maintained, but the electronic properties could be considerably enhanced. This could be ascribed to the increased optical band gap and the increased oxygen vacancies, as corroborated by the microstructure characterizations. In addition, the surface became smoother upon thermal annealing, guaranteeing good interface contact between electrode and a-IGZO. The optical transmittance at 400–800 nm exceeded 90% for all samples. All in all, thermal annealing at appropriate temperatures is expected to improve the performances of relevant a-IGZO thin film transistors.

  1. Annealing effect of thermal spike in MgO thin film prepared by cathodic vacuum arc deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Daoyun, E-mail: zhudy@gdut.edu.cn [Experiment Teaching Department, Guangdong University of Technology, Guangzhou 510006 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); Zhao, Shoubai [School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510400 (China); Zheng, Changxi; Chen, Dihu [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China); He, Zhenhui, E-mail: stshzh@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)

    2013-12-16

    MgO films were prepared by using pulsed cathodic vacuum arc deposition technique. The substrate bias voltage was in the range of −150 to −750 V. Film structure was investigated by X-ray diffraction (XRD). The annealing effect of thermal spike produced by the impacting of energetic ions was analyzed. The calculated results showed that the lifetime of a thermal spike generated by an energetic ion with the energy of 150 eV was less than one picosecond and it was sufficient to allow Mg{sup 2+} or O{sup 2-} to move one bond length to satisfy the intrinsic stress relief in the affected volume. The MgO(200) lattice spacings of the films deposited at different bias voltages were all larger than the ideal value of 2.1056 Å. As the bias amplitude increased the lattice spacing decreased, which indicated that the compressive stress in the film was partially relieved with increasing impacting ion energy. The stress relief also could be reflected from the film orientation with bias voltage. The biaxial elastic modulus for MgO(100), MgO(110) and MgO(111) planes were calculated and they were M{sub (100)} = 199 GPa, M{sub (110)} = 335 GPa and M{sub (111)} = 340 GPa, respectively. The M values indicated that the preferred orientation will be MgO(200) due to the minimum energy configuration when the lattice strain was large. It was confirmed by the XRD results in our experiments. - Highlights: • MgO thin films with preferred orientation were obtained by CVAD technique. • Annealing effect of a thermal spike in MgO film was discussed. • Lattice spacing of MgO film decreased with the increase of bias voltage. • Film preferred orientation changed from (200) to (220) as the bias voltage increased.

  2. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  3. Thermal effect on structural and magnetic properties of Fe78B13Si9 annealed amorphous ribbons

    Science.gov (United States)

    Soltani, Mohamed Larbi; Touares, Abdelhay; Aboki, Tiburce A. M.; Gasser, Jean-Georges

    2017-08-01

    In the present work, we study the influence of thermal treatments on the magnetic properties of as-quenched and pre-crystallized Fe78Si9B13 after stress relaxation. The crystallization behavior of amorphous and treated Fe78Si9B13 ribbons was revisited. The measurements were carried out by means of Differential Scanning Calorimetry, by X-ray diffraction and by Vibrating Sample Magnetometer, Susceptometer and fluxmeter. Relaxed samples were heated in the resistivity device up to 700°C and annealed near the onset temperature about 420°C for respectively 1, 3, 5, 8 hours. In as-quenched samples, two transition points occur at about 505°C and 564°C but in relaxed sample, the transition points have been found about 552°C and 568°C. Kinetics of crystallization was deduced for all studied samples. Annealing of the as-purchased ribbon shows the occurrence of α-Fe and tetragonal Fe3B resulting from the crystallization of the remaining amorphous phase. The effects on magnetic properties were pointed out by relating the structural evolution of the samples. The magnetic measurements show that annealing change the saturation magnetization and the coercive magnetic field values, hence destroying the good magnetic properties of the material. The heat treatment shows that the crystallization has greatly altered the shape of the cycles and moved the magnetic saturation point of the samples. The effect of treatment on the magneto-crystalline anisotropy is also demonstrated.

  4. Effect of thermal annealing on the structural and optical properties of tris-(8-hydroxyquinoline)aluminum(III) (Alq3 ) films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-05-01

    Tris-(8-hydroxyquionoline)aluminum (Alq3 ) was synthesized and coated on to a glass substrate using the dip coating method. The structural and optical properties of the Alq3 film after thermal annealing from 50°C to 300°C in 50° steps was studied. The films have been prepared with 2 to 16 layers (42-324 nm). The thickness and thermal annealing of Alq3 films were optimized for maximum luminescence yield. The Fourier transform infrared spectrum confirms the formation of quinoline with absorption in the region 700 - 500/cm. Partial sublimation and decomposition of quinoline ion was observed with the Alq3 films annealed at 300°C. The X-ray diffraction pattern of the Alq3 film annealed at 50°C to 150°C reveals the amorphous nature of the films. The Alq3 film annealed above 150°C were crystalline nature. Film annealed at 150°C exhibits a photoluminescence intensity maximum at 512 nm when excited at 390 nm. The Alq3 thin film deposited with 10 layers (220 nm) at 150°C exhibited maximum luminescence yield. Copyright © 2014 John Wiley & Sons, Ltd.

  5. Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu2O-absorber solar cell

    Directory of Open Access Journals (Sweden)

    Dimopoulos T.

    2014-07-01

    Full Text Available Heterojunction solar cells were fabricated by electrochemical deposition of p-type, cuprous oxide (Cu2O absorber on sputtered, n-type ZnO layer. X-ray diffraction measurements revealed that the as-deposited absorber consists mainly of Cu2O, but appreciable amounts of metallic Cu and cupric oxide (CuO are also present. These undesired oxidation states are incorporated during the deposition process and have a detrimental effect on the photovoltaic properties of the cells. The open circuit voltage (VOC, short circuit current density (jSC, fill factor (FF and power conversion efficiency (η of the as-deposited cells are 0.37 V, 3.71 mA/cm2, 35.7% and 0.49%, respectively, under AM1.5G illumination. We show that by thermal annealing in vacuum, at temperatures up to 300 °C, compositional purity of the Cu2O absorber could be obtained. A general improvement of the heterojunction and bulk materials quality is observed, reflected upon the smallest influence of the shunt and series resistance on the transport properties of the cells in dark and under illumination. Independent of the annealing temperature, transport is dominated by the space-charge layer generation-recombination current. After annealing at 300 °C the solar cell parameters could be significantly improved to the values of: VOC = 0.505 V, jSC = 4.67 mA/cm2, FF = 47.1% and η = 1.12%.

  6. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Fernández-Delgado, N., E-mail: natalia.fernandezdelgado@alum.uca.es [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Herrera, M. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain); Chisholm, M.F. [Scanning Transmission Electron Microscopy Group, Oak Ridge National Laboratory, TN (United States); Kamarudin, M.A. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400, UPM Serdang, Selangor (Malaysia); Zhuang, Q.D.; Hayne, M. [Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom); Molina, S.I. [Department of Material Science, Metallurgical Engineering and Inorganic Chemistry, IMEYMAT, University of Cádiz, 11510, Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • GaSb QDs are more elongated and Sb is less concentrated after the thermal annealing. • The density of misfit dislocations in GaSb QDs is reduced after the annealing. • Threading dislocations in GaSb/GaAs QDs are Sb-rich after the thermal annealing. • The gliding of a threading dislocation favors Sb diffusion in GaSb/GaAs QDs. - Abstract: In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

  7. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  8. Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

    International Nuclear Information System (INIS)

    Kling, A.; Soares, J.C.; Rodriguez, A.; Rodriguez, T.; Avella, M.; Jimenez, J.

    2006-01-01

    Silicon capped by thermal oxide has been implanted with 1 x 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage

  9. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  10. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  11. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  12. Effect of thermal annealing on the microstructures and photocatalytic performance of silver orthophosphate: The synergistic mechanism of Ag vacancies and metallic Ag

    International Nuclear Information System (INIS)

    Yan, Tingjiang; Guan, Wenfei; Xiao, Ying; Tian, Jun; Qiao, Zheng; Zhai, Huishan; Li, Wenjuan; You, Jinmao

    2017-01-01

    Highlights: • Ag_3PO_4 was initially prepared via ion-exchange reaction and then annealed in air. • Thermal annealing also resulted in the formation of metallic Ag and Ag vacancies. • The annealed samples exhibited superior activity to the pristine sample. • Both Ag vacancies and metallic Ag contributed to the high activity. - Abstract: In this work, a simple thermal annealing route has been developed to improve the photocatalytic performance of silver orthophosphate (Ag_3PO_4) photocatalyst toward organic pollutants degradation under visible light irradiation. The experimental results indicated that thermal treatment of Ag_3PO_4 led to an obvious lattice shift towards right and significantly narrowed band gap energies due to the formation of Ag vacancies and metallic Ag during Ag_3PO_4 decomposition. These structural variations notably affected the photocatalytic performance of Ag_3PO_4 photocatalysts. The activity of the annealed samples was found to be significantly enhanced toward the degradation of MO dye. The highest activity was observed over the sample annealed at 400 °C, which exceeded that of pristine Ag_3PO_4 by a factor of about 21 times. By means of photoluminescence spectroscopy and photoelectrochemical measurements, we propose that the enormous enhancement in activity was mainly attributed to the efficient separation of photogenerated electrons and holes driven by the synergistic effect of Ag vacancies and metallic Ag. The strong interaction between annealed particles also inhibited the dissolution of Ag"+ from Ag_3PO_4 into aqueous solution, contributing to an improved photocatalytic stability. The strategy presented here provides an ideal platform for the design of other highly efficient and stable Ag-based photocatalysts for broad applications in the field of photocatalysis.

  13. Thermal-annealing effects on the structural and magnetic properties of 10% Fe-doped SnO{sub 2} nanoparticles synthetized by a polymer precursor method

    Energy Technology Data Exchange (ETDEWEB)

    Aragón, F.H., E-mail: fermin964@hotmail.com [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); Coaquira, J.A.H. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Nagamine, L.C.C.M.; Cohen, R. [Instituto de Física, Universidade de São Paulo, São Paulo SP 05508-090 (Brazil); Silva, S.W. da [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília DF 70910-900 (Brazil); Instituto de Ciências Biológicas, Pós-graduação em Nanociência e Nanobiotecnologia, Universidade de Brasília, Brasilia DF 70919-970 (Brazil); and others

    2015-02-01

    In this work, we present the experimental results of Sn{sub 0.9}Fe{sub 0.1}O{sub 2} nanoparticles synthesized by a polymer precursor method. Studies were performed in the as-prepared (AP) and thermally-annealed (TA) samples. The X-ray diffraction (XRD) data analysis carried out using the Rietveld refinement method shows the formation of only the rutile-type structure in the AP sample and this phase remains stable for the TA sample. Additionally, the mean crystallite size shows an increase from ∼4 nm to ∼17 nm after the annealing and a clear reduction of the residual strain has also been determined. Micro-Raman spectroscopy measurements show the formation of an iron oxide phase (likely α-Fe{sub 2}O{sub 3}) after the thermal treatment. Magnetic measurements show a paramagnetic behavior for the AP sample and the coexistence of a weak ferromagnetism and paramagnetism for the TA sample. The magnetically-ordered contribution of the TA sample has been assigned to the formation of the hematite phase. DC and AC magnetic features of the TA sample are consistent with a cluster-glass behavior which seems to be related to the magnetic disorder of spins located at the particle surface. Those spins clusters seem to be formed due to the diffusion of iron ions from the core of the particle to the surface caused by the annealing process. - Highlights: • Thermal annealing effects in the 10% Fe-doped SnO{sub 2} nanoparticles have been studied. • XRD data analysis shows the formation of the rutile-type structure. • Raman measurements show the formation of small amount of α-Fe{sub 2}O{sub 3} after the annealing. • Paramagnetic and magnetically ordered phases were determined after the annealing. • Spin clusters likely at the particle surface have been formed after the annealing.

  14. Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

    Science.gov (United States)

    Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

    2016-04-01

    In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

  15. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  16. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  17. Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells

    International Nuclear Information System (INIS)

    Sasaki, T.; Arafune, K.; Lee, H.S.; Ekins-Daukes, N.J.; Tanaka, S.; Ohshita, Y.; Yamaguchi, M.

    2006-01-01

    Lattice-mismatched In 0.16 Ga 0.84 As solar cells were grown on GaAs substrates using graded In x Ga 1- x As buffer layers and homogenous In 0.16 Ga 0.84 As buffer layers. The indium composition x in the graded buffer changed from 0% to 16% continuously. Thermal cycle annealing (TCA) was performed after the growth of the graded buffer layers. The effects of TCA on the solar cell open-circuit voltage and quantum efficiency have been investigated. The minority carrier lifetime is observed to increase in the p-type In 0.16 Ga 0.84 As layer after applying the TCA process. Electron-beam-induced current microscopy also shows a related reduction in dislocation density in the p-type In 0.16 Ga 0.84 As layer after TCA processing. Cross-sectional transmission electron microscopy performed on the graded buffer layer suggests that the strain present in the cell layers is reduced after the TCA process, implying that the TCA treatment promotes strain relaxation in the graded buffer layers

  18. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  19. Thermal Annealing Effect on Optical Properties of Binary TiO2-SiO2 Sol-Gel Coatings

    Directory of Open Access Journals (Sweden)

    Xiaodong Wang

    2012-12-01

    Full Text Available TiO2-SiO2 binary coatings were deposited by a sol-gel dip-coating method using tetrabutyl titanate and tetraethyl orthosilicate as precursors. The structure and chemical composition of the coatings annealed at different temperatures were analyzed by Raman spectroscopy and Fourier Transform Infrared (FTIR spectroscopy. The refractive indices of the coatings were calculated from the measured transmittance and reflectance spectra. An increase in refractive index with the high temperature thermal annealing process was observed. The Raman and FTIR results indicate that the refractive index variation is due to changes in the removal of the organic component, phase separation and the crystal structure of the binary coatings.

  20. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

    Science.gov (United States)

    Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

    2018-04-01

    The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

  1. Effect of thermal annealing on the redistribution of alkali metals in Cu(In,Ga)Se2 solar cells on glass substrate

    Science.gov (United States)

    Kamikawa, Yukiko; Nishinaga, Jiro; Ishizuka, Shogo; Tayagaki, Takeshi; Guthrey, Harvey; Shibata, Hajime; Matsubara, Koji; Niki, Shigeru

    2018-03-01

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  2. Effect of Thermal Annealing on the Redistribution of Alkali Metals in Cu(In,Ga)Se2 Solar Cells on Glass Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guthrey, Harvey L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kamikawa, Yukiko [National Institute of Advanced Industrial Science and Technology (AIST); Nishinaga, Jiro [National Institute of Advanced Industrial Science and Technology (AIST); Ishizuka, Shogo [National Institute of Advanced Industrial Science and Technology (AIST); Tayagaki, Takeshi [National Institute of Advanced Industrial Science and Technology (AIST); Shibata, Hajime [National Institute of Advanced Industrial Science and Technology (AIST); Matsubara, Koji [National Institute of Advanced Industrial Science and Technology (AIST); Niki, Shigeru [National Institute of Advanced Industrial Science and Technology (AIST)

    2018-03-02

    The precise control of alkali-metal concentrations in Cu(In,Ga)Se2 (CIGS) solar cells via post deposition treatment (PDT) has recently attracted attention. When PDT is performed at an elevated temperature, an accompanying annealing effect is expected. Here, we investigate how thermal annealing affects the redistribution of alkali metals in CIGS solar cells on glass substrates and the properties of the solar cells. In addition, we investigate the origin of non-homogeneous alkali-metal depth profiles that are typical of CIGS grown using a three-stage process. In particular, we use secondary-ion mass spectrometry measurements of the ion concentration as a function of distance from the CIGS surface to investigate the impact of thermal annealing on the distribution of alkali metals (Na, Ka, and Rb) and constituent elements (Ga and In) in the CIGS absorbers. We find that the depth profiles of the alkali metals strongly reflect the density of sites that tend to accommodate alkali metals, i.e., vacancies. Annealing at elevated temperature caused a redistribution of the alkali metals. The thermal-diffusion kinetics of alkali metals depends strongly on the species involved. We introduced low flux potassium fluoride (KF) to study a side effect of KF-PDT, i.e., Na removal from CIGS, separately from its predominant effects such as surface modification. When sufficient amounts of Na are supplied from the soda lime glass via annealing at an elevated temperature, the negative effect was not apparent. Conversely, when the Na supply was not sufficient, it caused a deterioration of the photovoltaic properties.

  3. In-place thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1985-04-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  4. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    International Nuclear Information System (INIS)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-01-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 deg. C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 deg. C increments from 100 to 300 deg. C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60 Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 deg. C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 deg. C/30 min and that similarities between fossil and MEQ spectra after the 300 deg. C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history

  5. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  6. The effect of pre-heating and pre-irradiation with gamma rays on thermal annealing in bis [n-benzoil-n-phenyl hydroxilaminate] copper (II)

    International Nuclear Information System (INIS)

    Nakanishi, C.; Silva, C.P.G. da.

    1988-10-01

    The main purpose of this work was to make a contribution to the study of the chemical effects of the (n,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gamma-rays on the retention and thermal annealing of bis-[N-benzoil-N-phenlhydroxilaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-Point, elemental analysis, infra-red and vesible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis and radiolysis on the retention. It seems that heat gamma-radiation can produce deffects which will lower the susceptibility of the compound to thermal annealing. On the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing aasuming the capture of free electrons and also the existence of holes. (author) [pt

  7. The effect of pre-heating and pre-irradiation with gamma-rays on thermal annealing in-bis-[n-benzoil-n-(o) tolylhydroxylaminate] cooper (II)

    International Nuclear Information System (INIS)

    Nakanishi, C.; Silva, C.P.G. da.

    1990-02-01

    The main purpose of this work was to make a contribution on the study of the chemical effects of the (N,γ) reaction on copper chelate. The influence of some factors such as pre-heating and pre-irradiation with gama-rays on the retention and thermal annealing of bis [N-benzoyl-N-(o)tolylhydroxylaminate] copper (II) was investigated. The complex was synthesized and later characterized by means of: determination of the melting-point, elemental analysis, infra-red and visible range absortion spectrophotometry. The compound was heated and also irradiated with gamma-rays in order to verify the effect of thermolysis on the retention. It seems that heat and gamma-radiaition can produce deffects which will lower the susceptibility of the compound to thermal annealling. On the basis on the model envolving electronic species some explanation of ours results were made and a mechanism was proposed for the retention and thermal annealing assuming the capture of free electrons and also the existence of holes. (author) [pt

  8. Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

    2005-11-21

    A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

  9. Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

    Energy Technology Data Exchange (ETDEWEB)

    Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

    1975-01-01

    The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

  10. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  11. Effect of rapid thermal annealing on the Mo back contact properties for Cu_2ZnSnSe_4 solar cells

    International Nuclear Information System (INIS)

    Placidi, Marcel; Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus; Alcobé, Xavier; Pérez-Rodríguez, Alejandro; Saucedo, Edgardo

    2016-01-01

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu_2ZnSnSe_4 (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  12. Effect of rapid thermal annealing on the Mo back contact properties for Cu{sub 2}ZnSnSe{sub 4} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: mplacidi@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Alcobé, Xavier [Centres Científics i Tecnològics (CCiTUB), Lluis Solé i Sabarís 1, 08028 Barcelona (Spain); Pérez-Rodríguez, Alejandro [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona (Spain); Saucedo, Edgardo [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain)

    2016-08-05

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu{sub 2}ZnSnSe{sub 4} (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  13. Effect of electric-spark alloying and subsequent annealing on the thermal stability of metallic structural materials

    International Nuclear Information System (INIS)

    Vdovin, S.F.; Reshetnikov, S.M.

    2000-01-01

    The effect of annealing on resistive properties of electric-spark coatings on the carbon steels is studied. The steels 10 and 20 samples with electric spark coatings of various compositions and control ones without annealing and coating are chosen for the study. The steels cr27 and 12cr18ni10ti, the nichrome (cr20ni80) alloy, aluminium as well as compositions of these materials: aluminium + cr27 and aluminium + nichrome were used as coating materials. It is shown that aluminium coatings increase the steel 10 heat resistance more them by 4 times, the aluminium + nichrome coatings - more than by 6 times and aluminium + cr27 coatings - more than by 6 times. In contrast to the electric-spark coating of the carbon steel surface by chromium-nickel alloys, the composition aluminium-containing coatings with annealing in vacuum provide for reliability of long-term protection of these steels from air oxidation with the temperature above the aluminium melting [ru

  14. Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

    Science.gov (United States)

    Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

    2018-05-01

    Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

  15. Study of annealing effects in Al–Sb bilayer thin films

    Indian Academy of Sciences (India)

    There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

  16. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    Science.gov (United States)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-06-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 °C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 °C increments from 100 to 300 °C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 °C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 °C/30 min and that similarities between fossil and MEQ spectra after the 300 °C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history.

  17. The effect of residual thermal stresses on the fatigue crack growth of laser-surface-annealed AISI 304 stainless steel Part I: computer simulation

    International Nuclear Information System (INIS)

    Shiue, R.K.; Chang, C.T.; Young, M.C.; Tsay, L.W.

    2004-01-01

    The effect of residual thermal stresses on the fatigue crack growth of the laser-surface-annealed AISI 304 stainless steel, especially the effect of stress redistribution ahead of the crack tip was extensively evaluated in the study. Based on the finite element simulation, the longitudinal residual tensile stress field has a width of roughly 20 mm on the laser-irradiated surface and was symmetric with respect to the centerline of the laser-annealed zone (LAZ). Meanwhile, residual compressive stresses distributed over a wide region away from the LAZ. After introducing a notch perpendicular to the LAZ, the distribution of longitudinal residual stresses became unsymmetrical about the centerline of LAZ. High residual compressive stresses exist within a narrow range ahead of notch tip. The improved crack growth resistance of the laser-annealed specimen might be attributed to those induced compressive stresses. As the notch tip passed through the centerline of the LAZ, the residual stress ahead of the notch tip was completely reverted into residual tensile stresses. The existence of unanimous residual tensile stresses ahead of the notch tip was maintained, even if the notch tip extended deeply into the LAZ. Additionally, the presence of the residual tensile stress ahead of the notch tip did not accelerate the fatigue crack growth rate in the compact tension specimen

  18. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing: Solvent and Thickness Effects

    Directory of Open Access Journals (Sweden)

    Qiuyan Yang

    2017-10-01

    Full Text Available Solvent vapor annealing of block copolymer (BCP thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for nanolithography and hybrid materials preparation. However, precise control of the arising morphologies is essential, but in most cases difficult to achieve. In this work, we investigated the solvent and thickness effects on the morphology of poly(styrene-b-2 vinyl pyridine (PS-b-P2VP thin films with a film thickness range from 0.4 L0 up to 0.8 L0. Ordered perpendicular structures were achieved. One of the main merits of our work is that the phase behavior of the ultra-high molecular weight BCP thin films, which hold a 100-nm sized domain distance, can be easily monitored via current available techniques, such as scanning electron microscope (SEM, atomic force microscope (AFM, and transmission electron microscope (TEM. Systematic monitoring of the self-assembly behavior during solvent vapor annealing can thus provide an experimental guideline for the optimization of processing conditions of related BCP films systems.

  19. Effect of thermal annealing on the structural and optical properties of Cu2FeSnS4 thin films grown by vacuum evaporation method

    Science.gov (United States)

    Oueslati, H.; Rabeh, M. Ben; Kanzari, M.

    2018-02-01

    In this work, the effect of different types of thermal annealing on the properties of Cu2FeSnS4 (CFTS) thin films deposited by thermal evaporation at room temperature on glass substrate were investigated. CFTS powder was synthesized by direct melting of the constituent elements taken in stoichiometry compositions. The X-ray diffraction experimental data indicating that the Cu2FeSnS4 powder illustrating a stannite structure in space group I\\bar {4}2m. From the XRD analysis we have found that the polycrystalline CFTS thin film was only obtained by thermal annealed in sulfur atmosphere under a high vacuum of 400 °C temperature during 2 h. Optical study reveals that the thin films have relatively high absorption coefficients (≈ 105cm-1) and the values of optical band gap energy ranged between 1.38 and 1.48 eV. Other optical parameters were evaluated according to the models of Wemple Di-Domenico and Spitzer-Fan. Finally, hot probe measurements of CFTS thin films reveal p-type conductivity.

  20. Effect of In Situ Thermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Alaa Ayad Al-mebir

    2016-01-01

    Full Text Available An in situ thermal annealing process (iTAP has been introduced before the common ex situ cadmium chloride (CdCl2 annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

  1. Effect of Hf underlayer on structure and magnetic properties of rapid thermal annealed FePt thin films

    International Nuclear Information System (INIS)

    Shen, C.Y.; Yuan, F.T.; Chang, H.W.; Lin, M.C.; Su, C.C.; Chang, S.T.; Wang, C.R.; Mei, J.K.; Hsiao, S.N.; Chen, C.C.; Shih, C.W.; Chang, W.C.

    2014-01-01

    FePt(20 nm) and FePt(20 nm)/Hf(10 nm) thin films prepared on the glass substrates by sputtering and post annealing are studied. For both samples, the as deposited films are disordered and L1 0 -ordering is triggered by a 400 °C-annealing. At T a ≥600 °C, Hf–Pt intermetallic compound forms with increasing T a , which consumes Pt in FePt layer and results in the formation of Fe 3 Pt phase. The film becomes soft magnetic at T a =800 °C. The optimized condition of FePt/Hf film is in the T a range of 500 to 600 °C where the interdiffusion between Hf and FePt layer is not extensive. The value of H c is 8.9 kOe and M r is 650–670 emu/cm 3 . Unlike FePt films, the Hf-undelayered samples show significantly reduced out-of-plane remanent and coercivity. The values for both are around 50% smaller than that of the FePt films. Additionally, Hf underlayer markedly reduces the FePt grain size and narrows the distribution, which enhances magnetic intergrain coupling. Good in-plane magnetic properties are preferred for the uses like a hard biasing magnet in a spintronic device. - Highlights: • Effect of Hf underlayer on structure and magnetic properties of FePt films are studied. • Hf underlayer reduces size, narrows the distribution of grains and thus enhances intergrain coupling. • Higher T a ≥600 °C makes Hf–Pt intermetallic compound and thus Fe 3 Pt phase form. • Good in-plane magnetic property is proper for uses in hard biasing magnet in spintronic devices

  2. Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hao; Harasawa, Ryo; Yasue, Yuya; Aritake, Takanori; Jiang, Canyu; Tackeuchi, Atsushi, E-mail: atacke@waseda.jp [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Ji, Lian; Lu, Shulong [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou (China)

    2016-08-15

    The effect of thermal annealing on the electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  3. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

    Directory of Open Access Journals (Sweden)

    Hao Wu

    2016-08-01

    Full Text Available The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4 ns at 10 (300 K, which was more than two (four times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  4. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  5. Significant improvement in the thermal annealing process of optical resonators

    Science.gov (United States)

    Salzenstein, Patrice; Zarubin, Mikhail

    2017-05-01

    Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

  6. Recovery of the irradiated JFETs by thermal annealing

    International Nuclear Information System (INIS)

    Assaf, J.

    2007-10-01

    Study about the recovering of irradiated JFET transistors has been reported. The JFETs were damaged totally or partially by exposition to Gamma ray and neutrons. Electronics noise has used to evaluate the effect of radiation and the recovery. The study focused on the recovery by thermal annealing, where samples have been heated gradually until 140 centigrade degree (410 K). The recovery ratio given by this method was higher than that resulted from the relaxation method (time recovery) carried out in the room temperature (300 K), especially for Gamma irradiated samples.(author)

  7. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Beirau, Tobias; Mihailova, Boriana; Groat, Lee A.; Chudy, Thomas; Shelyug, Anna; Navrotsky, Alexandra; Ewing, Rodney C.; Schlüter, Jochen; Škoda, Radek; Bismayer, Ulrich

    2017-01-01

    Abstract

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400–1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1·10

  8. Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

    International Nuclear Information System (INIS)

    Liu Wen-Feng; Zhang Min-Gang; Zhang Ke-Wei; Zhang Hai-Jie; Chai Yue-Sheng; Xu Xiao-Hong

    2016-01-01

    Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. (paper)

  9. Reduction of thermal quenching of biotite mineral due to annealing

    International Nuclear Information System (INIS)

    Kalita, J.M.; Wary, G.

    2014-01-01

    Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

  10. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

  11. Perpendicular Structure Formation of Block Copolymer Thin Films during Thermal Solvent Vapor Annealing : Solvent and Thickness Effects

    NARCIS (Netherlands)

    Yang, Qiuyan; Loos, Katja

    2017-01-01

    Solvent vapor annealing of block copolymer (BCP) thin films can produce a range of interesting morphologies, especially when the perpendicular orientation of micro-domains with respect to the substrate plays a role. This, for instance, allows BCP thin films to serve as useful templates for

  12. Combined effect of non-equilibrium solidification and thermal annealing on microstructure evolution and hardness behavior of AZ91 magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Z.Z.; Yang, W., E-mail: weiyang@mail.nwpu.edu.cn; Chen, S.H.; Yu, H.; Xu, Z.F.

    2014-06-15

    Non-equilibrium solidification of commercial AZ91 magnesium alloy was performed by copper mold spray-casting technique and the thermal stability property of as-formed meta-stable microstructure was investigated by subsequent annealing at different temperatures and times. Remarkable grain refinement appears with increasing cooling rate during solidification process, which is accompanied by a visible cellular/dendrite transition for the grain morphology of primary phase. Moreover, the non-equilibrium solidified alloy exhibits obvious precipitation hardening effect upon annealing at 200 °C, and the precipitation mode of β-Mg{sub 17}Al{sub 12} phase changes from discontinuous to continuous with extending isothermal time from 4 h to 16 h, which generates an increase of resultant micro-hardness value. After solid solution treatment at the elevated temperature of 420 °C, the volume fraction of β-Mg{sub 17}Al{sub 12} phase decreases and a notable grain growth phenomenon occurs, which give rise to a reduction of hardness in comparison with that of as-quenched alloy.

  13. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    International Nuclear Information System (INIS)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-01-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10 26 m −2 ) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min −1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h

  14. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Science.gov (United States)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-08-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  15. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hara, Masanori [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Otsuka, Teppei [Kyushu University, Interdisciplinary Graduate School of Engineering Science, Higashi-ku, Fukuoka (Japan); Oya, Yasuhisa [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

    2015-08-15

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10{sup 26} m{sup −2}) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min{sup −1} up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  16. Thermal annealing studies in muscovite and in quartz

    International Nuclear Information System (INIS)

    Roberts, J.H.; Gold, R.; Ruddy, F.H.

    1979-06-01

    In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

  17. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  18. Thermal annealing of gamma irradiated ammonium chloride (Preprint no. RC-37)

    International Nuclear Information System (INIS)

    Kalkar, C.D.; Lala, Neeta

    1991-01-01

    Ammonium chloride produces N 2 H 4 + and Cl 2 as the main radiolytic products on gamma irradiation. Thermal annealing has a marked effect on the stability of N 2 H 4 + and Cl 2 . During the thermal annealing the chemical yield of nitrite and iodine was studied by dissolving irradiated ammonium chloride in aqueous sodium nitrate and potassium iodide respectively. The yield of iodine in isochronal annealing showed an exponential behaviour with temperature while that of nitrite showed a decrease and then increases at higher temperatures. The results are explained on the basis of dissociation and recombination of N 2 H 4 + with temperature. (author). 3 refs., 2 figs

  19. Far-infrared spectroscopy of thermally annealed tungsten silicide films

    International Nuclear Information System (INIS)

    Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

    1991-01-01

    The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

  20. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  1. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case.

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.

  2. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  3. Structural evolution of tunneling oxide passivating contact upon thermal annealing.

    Science.gov (United States)

    Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

    2017-10-16

    We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

  4. Thermal Annealing Effect on Structural, Morphological, and Sensor Performance of PANI-Ag-Fe Based Electrochemical E. coli Sensor for Environmental Monitoring

    Directory of Open Access Journals (Sweden)

    Norshafadzila Mohammad Naim

    2015-01-01

    Full Text Available PANI-Ag-Fe nanocomposite thin films based electrochemical E. coli sensor was developed with thermal annealing. PANI-Ag-Fe nanocomposite thin films were prepared by oxidative polymerization of aniline and the reduction process of Ag-Fe bimetallic compound with the presence of nitric acid and PVA. The films were deposited on glass substrate using spin-coating technique before they were annealed at 300°C. The films were characterized using XRD, UV-Vis spectroscopy, and FESEM to study the structural and morphological properties. The electrochemical sensor performance was conducted using I-V measurement electrochemical impedance spectroscopy (EIS. The sensitivity upon the presence of E. coli was measured in clean water and E. coli solution. From XRD analysis, the crystallite sizes were found to become larger for the samples after annealing. UV-Vis absorption bands for samples before and after annealing show maximum absorbance peaks at around 422 nm–424 nm and 426 nm–464 nm, respectively. FESEM images show the diameter size for nanospherical Ag-Fe alloy particles increases after annealing. The sensor performance of PANI-Ag-Fe nanocomposite thin films upon E. coli cells in liquid medium indicates the sensitivity increases after annealing.

  5. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  6. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    International Nuclear Information System (INIS)

    Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-01-01

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

  7. Effects of implantation temperature and thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in a-SiC:H

    Energy Technology Data Exchange (ETDEWEB)

    Tsvetkova, T., E-mail: tania_tsvetkova@yahoo.co.uk [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Wright, C.D. [University of Exeter, College of Engineering, Mathematics and Physical Sciences, Harrison Building, North Park Rd, Exeter EX4 4QF (United Kingdom); Kitova, S. [Institute of Optical Materials and Technologies, Bulgarian Academy of Sciences, 109 Acad. G. Bontchev St., 1113 Sofia (Bulgaria); Bischoff, L. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314 Dresden (Germany); Zuk, J. [Institute of Physics, Maria Curie-Sklodovska University, Pl. M.Curie-Sklodovskiej 1, 20-031 Lublin (Poland)

    2013-07-15

    The effects of implantation temperature and post-implantation thermal annealing on the Ga{sup +} ion beam induced optical contrast formation in hydrogenated silicon–carbon alloy films have been studied. As a result of the implantation a well-expressed “darkening” effect (i.e. absorption edge shift to the longer-wavelength/lower-photon-energy region) has been registered. It is accompanied by a remarkable increase of the absorption coefficient up to 2 orders of magnitude in the measured photon energy range (1.5–3.1 eV). The optical contrast thus obtained (between implanted and unimplanted regions of the film material) has been made use of in the form of optical pattern formation by computer-operated Ga{sup +}-focused ion beam. Possible applications of this effect in the area of submicron lithography and high-density optical data storage have been suggested with regard to the most widely spread focused micro-beam systems based on Ga{sup +} liquid metal ion sources. The fact that Ga has a very low melting point (T{sub m} = 29.8 °C) and an unusual feature of volume contraction on melting are factors which favour Ga incorporation upon ion-implantation as dispersed clusters, or small nanoparticles. It has been previously noted that Ga precipitation into nanoparticles can vary dramatically (in terms of particle size) with Ga concentration and small changes in surface implant temperature, thus affecting the optical properties of the target. The precise role of implantation temperature effects, i.e. the target temperature during Ga{sup +} ion irradiation, on the optical contrast obtainable, has been therefore a key part of this study. Appropriate post-implantation annealing treatments were also studied, since these are expected to offer further benefits in reducing the required ion dose and enhancing contrast, thus increasing the cost-effectiveness of the bit-writing method.

  8. Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) films

    Energy Technology Data Exchange (ETDEWEB)

    Laskarakis, A., E-mail: alask@physics.auth.gr; Karagiannidis, P.G.; Georgiou, D.; Nikolaidou, D.M.; Logothetidis, S.

    2013-08-31

    Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible–far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. - Highlights: • Optical study of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) • The Drude model provides information for PEDOT:PSS conductivity. • The addition of dimethylsulfoxide increases the electrical conductivity of PEDOT:PSS. • The increase in conductivity is correlated to increase of PEDOT grain size. • The thermal treatment has a smaller effect on PEDOT:PSS properties.

  9. Optical investigations of the effect of solvent and thermal annealing on the optoelectronic properties of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) films

    International Nuclear Information System (INIS)

    Laskarakis, A.; Karagiannidis, P.G.; Georgiou, D.; Nikolaidou, D.M.; Logothetidis, S.

    2013-01-01

    Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is one of the most promising conducting polymers that can be used as transparent electrode or as buffer layer for organic electronic devices. However, when used as an electrode, its conductivity has to be optimized either by the addition of solvents or by post-deposition processing. In this work, we investigate the effect of the addition of the polar solvent dimethylsulfoxide (DMSO) to an aqueous PEDOT:PSS solution on its optical and electrical properties by the implementation of the Drude model for the analysis of the measured pseudo-dielectric function by Spectroscopic Ellipsometry from the near infrared to the visible–far ultraviolet spectral range. The results show that the addition of DMSO increases significantly the film conductivity, which reaches a maximum value at an optimum DMSO concentration as it has confirmed by experimentally measured conductivity values. The post-deposition thermal annealing has been found to have a smaller effect on the film conductivity. - Highlights: • Optical study of Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) • The Drude model provides information for PEDOT:PSS conductivity. • The addition of dimethylsulfoxide increases the electrical conductivity of PEDOT:PSS. • The increase in conductivity is correlated to increase of PEDOT grain size. • The thermal treatment has a smaller effect on PEDOT:PSS properties

  10. Effects of thermal annealing on the optical, spectroscopic, and structural properties of tris (8-hydroxyquinolinate) gallium films grown on quartz substrates

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, Fahmi Fariq, E-mail: fahmi982@gmail.com [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Department of Physics, Faculty of Science and Engineering, University of Koya, Koya, Kurdistan Region (Iraq); Sulaiman, Khaulah [Low Dimensional Materials Research Center, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2011-10-03

    Highlights: {yields} Achieving a broad absorption band for Gaq3 covering the whole UV and some parts of visible spectra. {yields} Increasing photoluminescence emission to five times stronger than that of pristine film. {yields} Conformational changes towards the formation of crystalline {alpha}-Gaq3 polymorph. {yields} Determination of glass transition temperature for Gaq3 (T{sub g} 182 deg. C) and Alq3 (T{sub g} = 173 deg. C). {yields} Improving and understanding the physical properties of Gaq3 film by means of thermal treatment. - Abstract: In this study we report the optical, spectroscopic, and structural properties of vacuum deposited tris (8-hydroxyquinolinate) gallium film upon thermal annealing in the temperature range from 85 deg. C to 255 deg. C under a flowing nitrogen gas for 10 min. The optical UV-vis-NIR and luminescence spectroscopy measurements were performed to estimate the absorption bands, optical energy gap (E{sub g}), and photoluminescence (PL) of the films. Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) techniques were used to probe the spectroscopic and structural nature of the films. We show that, by annealing the films from 85 deg. C to 235 deg. C, it is possible to achieve an enhanced absorption and increased photoluminescence to five times stronger than that of the pristine film. The PL quenching at 255 deg. C was attributed to the presence of plainer chains allow easy going for excitons to a long distance due to the crystalline region formation of {alpha}-Gaq3 polymorph. The reduction in E{sub g} and infrared absorption bands upon annealing were referred to the enhancement in {pi}-{pi} interchain interaction and conformational changes by re-arrangement of the Gaq3 quinolinate ligands, respectively. Stokes shift for the films were observed and calculated. From the differential scanning calorimetry, DSC measurements, higher glass transition temperature was observed for Gaq3 (T{sub g} = 182 deg. C) compared to

  11. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kusworo, T. D., E-mail: tdkusworo@che.undip.ac.id; Aryanti, N., E-mail: nita.aryanti@gmail.com; Firdaus, M. M. H.; Sukmawati, H. [Chemical Engineering, Faculty of Engineering, Diponegoro University Prof. Soedarto Street, Tembalang, Semarang, 50239, Phone/Fax : (024)7460058 (Indonesia)

    2015-12-29

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second.

  12. Surface modification of cellulose acetate membrane using thermal annealing to enhance produced water treatment

    International Nuclear Information System (INIS)

    Kusworo, T. D.; Aryanti, N.; Firdaus, M. M. H.; Sukmawati, H.

    2015-01-01

    This study is performed primarily to investigate the effect of surface modification of cellulose acetate using thermal annealing on the enhancement of membrane performance for produced water treatment. In this study, Cellulose Acetate membranes were casted using dry/wet phase inversion technique. The effect of additive and post-treatment using thermal annealing on the membrane surface were examined for produced water treatment. Therma annealing was subjected to membrane surface at 60 and 70 °C for 5, 10 and 15 second, respectively. Membrane characterizations were done using membrane flux and rejection with produced water as a feed, Scanning Electron Microscopy (SEM) and Fourier Transform Infra Red (FTIR) analysis. Experimental results showed that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion technique. The results from the Scanning Electron Microscopy (FESEM) analysis was also confirmed that polyethylene glycol as additivie in dope solution and thermal annealing was affected the morphology and membrane performance for produced water treatment, respectively. Scanning electron microscopy micrographs showed that the selective layer and the substructure of membrane became denser and more compact after the thermal annealing processes. Therefore, membrane rejection was significantly increased while the flux was slighty decreased, respectively. The best membrane performance is obtained on the composition of 18 wt % cellulose acetate, poly ethylene glycol 5 wt% with thermal annealing at 70° C for 15 second

  13. Effect of thermal annealing on scintillation properties of Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12} under different atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chao; Ding, Dongzhou; Wu, Yuntao; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Wang, Qingqing; Ye, Le; Ren, Guohao [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

    2017-05-15

    Cerium-doped 1% Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12}(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O{sub 2} and N{sub 2} atmospheres from 350 to 1400 C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on ''as-grown'' and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O{sub 2} was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O{sub 2} containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77-650 K were found to be related to oxygen vacancies. (orig.)

  14. Effect of Thermal Annealing and Second Harmonic Generation on Bulk Damage Performance of Rapid-Growth KDP Type I Doublers at 1064 nm

    International Nuclear Information System (INIS)

    Runkel, M; Maricle, S; Torres, R; Auerbach, J; Floyd, R; Hawley-Fedder, R; Burnham, A K

    2000-01-01

    This paper discusses the results of thermal annealing and in-situ second harmonic generation (SHG) damage tests performed on six rapid growth KDP type 1 doubler crystals at 1064 nm (1 ω) on the Zeus automated damage test facility. Unconditioned (S/1) and conditioned (R/1) damage probability tests were performed before and after thermal annealing, then with and without SHG on six doubler crystals from the NIF-size, rapid growth KDP boule F6. The tests revealed that unannealed, last-grown material from the boule in either prismatic or pyramidal sectors exhibited the highest damage curves. After thermal annealing at 160 C for seven days, the prismatic sector samples increased in performance ranging from 1.6 to 2.4X, while material from the pyramidal sector increased only modestly, ranging from 1.0 to 1.4X. Second harmonic generation decreased the damage fluence by an average of 20 percent for the S/1 tests and 40 percent for R/1 tests. Conversion efficiencies under test conditions were measured to be 20 to 30 percent and compared quite well to predicted behavior, as modeled by LLNL frequency conversion computer codes. The damage probabilities at the 1 ω NIF redline fluence (scaled to 10 ns via t 0.5 ) for S/1 tests for the unannealed samples ranged from 20 percent in one sample to 90-100 percent for the other 5 samples. Thermal annealing reduced the damage probabilities to less than 35 percent for 3 of the poor-performing crystals, while two pyramidal samples remained in the 80 to 90 percent range. Second harmonic generation in the annealed crystal increased the S/1 damage probabilities on all the crystals and ranged from 40 to 100 percent. In contrast, R/1 testing of an unannealed crystal resulted in a damage probability at the NIF redline fluence of 16%. Annealing increased the damage performance to the extent that all test sites survived NIF redline fluences without damage. Second harmonic generation in the R/1 test yielded a damage probability of less than 2

  15. Thermal annealing of an embrittled reactor pressure vessel

    International Nuclear Information System (INIS)

    Mager, T.R.; Dragunov, Y.G.; Leitz, C.

    1998-01-01

    As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

  16. Effects of thickness and annealing condition on magnetic properties and thermal stabilities of Ta/Nd/NdFeB/Nd/Ta sandwiched films

    Science.gov (United States)

    Liu, Wen-Feng; Zhang, Min-Gang; Zhang, Ke-Wei; Zhang, Hai-Jie; Xu, Xiao-Hong; Chai, Yue-Sheng

    2016-11-01

    Ta/Nd/NdFeB/Nd/Ta sandwiched films are deposited by magnetron sputtering on Si (100) substrates, and subsequently annealed in vacuum at different temperatures for different time. It is found that both the thickness of NdFeB and Nd layer and the annealing condition can affect the magnetic properties of Ta/Nd/NdFeB/Nd/Ta films. Interestingly, the thickness and annealing temperature show the relevant behaviors that can affect the magnetic properties of the film. The high coercivity of 24.1 kOe (1 Oe = 79.5775 A/m) and remanence ratio (remanent magnetization/saturation magnetization) of 0.94 can be obtained in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed for 3 min at 1023 K. In addition, the thermal stability of the film is also linked to the thickness of NdFeB and Nd layer and the annealing temperature as well. The excellent thermal stability can be achieved in a Ta/Nd(250 nm)/NdFeB(600 nm)/Nd(250 nm)/Ta film annealed at 1023 K. Program supported by the National Natural Science Foundation of China (Grant No. 51305290), the Higher Education Technical Innovation Project of Shanxi Province, China (Grant No. 2013133), the Fund Program for the Scientific Activities of Selected Returned Overseas Professionals of Shanxi Province, China (Grant No. 2015003), and the Program for the Key Team of Scientific and Technological Innovation of Shanxi Province, China (Grant No. 2013131009).

  17. Effects of deposition and post-annealing conditions on electrical properties and thermal stability of TiAlN films by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Lee, S.-Y.; Wang, S.-C.; Chen, J.-S.; Huang, J.-L.

    2006-01-01

    TiAlN films were deposited by ion beam sputter deposition (IBSD) using a Ti-Al (90/10) alloy target in a nitrogen atmosphere on thermal oxidized Si wafers. Effects of ion beam voltage, substrate temperature (T s ) and post-annealing conditions on electrical properties and oxidation resistance of TiAlN films were studied. According to the experimental results, the proper kinetic energy provided good crystallinity and a dense structure of the films. Because of their better crystallinity and predomination of (200) planes, TiAlN films deposited with 900 V at low T s (50 deg. C) have shown lower resistivity than those at high T s (250 deg. C). They also showed better oxidation resistance. If the beam voltage was too high, it caused some damage to the film surfaces, which caused poor oxidation resistance of films. When sufficient kinetic energy was provided by the beam voltage, the mobility of adatoms was too high due to their extra thermal energy, thus reducing the crystallinity and structure density of the films. A beam voltage of 900 V and a substrate temperature of 50 deg. C were the optimum deposition conditions used in this research. They provided good oxidation resistance and low electrical resistivity for IBSD TiAlN films

  18. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

    2010-01-01

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  19. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  20. Thermodynamic analysis of the effect of annealing on the thermal stability of a Cu–Al–Ni–Mn shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Mazzer, E.M., E-mail: ericmazzer@gmail.com [Postgraduate Program in Materials Science and Engineering, Federal University of São Carlos, São Carlos, SP (Brazil); Kiminami, C.S.; Bolfarini, C.; Cava, R.D.; Botta, W.J.; Gargarella, P. [Department of Materials Engineering, Federal University of São Carlos, São Carlos, SP (Brazil)

    2015-05-20

    Highlights: • We evaluated the effect of annealing on a Cu-based shape memory alloy. • Stabilization was clarified in terms of the chemical and non-chemical energies. • Stabilization was related to the shift of transformations temperatures. • Insights into the role of stabilization of phases by thermodynamics approach. - Abstract: Shape memory alloys (SMA) usually exhibit shifts in the transformation temperatures with increasing the number of thermal cycles. These shifts result from an increased stability of the martensite during cycling and have an important role in the functionality of the material. The structural reasons for these changes are not fully understood and are investigated here by a thermodynamic approach. The variation in the transformation temperatures and in the chemical and non-chemical energy terms of the total energy involved in the transformation of a Cu–Al–Ni–Mn SMA was studied. Powder of this alloy was produced by gas atomization with size in the range of 32–45 μm and subsequently heat-treated at 180 °C, 250 °C and 300 °C during different times. The as-cast and heat-treated samples were investigated by differential scanning calorimetry, X-ray diffraction and scanning and transmission electron microscopy. Only a single martensitic β′ phase was formed at room temperature. It was observed an increase in the austenitic start transformation temperature (A{sub s}) as well as in the austenitic finish transformation temperature (A{sub f}) with increasing the annealing time and temperature. The shift in the transformation temperatures to higher values is attributed to a decrease of the latent heat of transformation and non-chemical energy term, caused by changes in the structural order of the martensite. This study shows that the variation of the transformation temperatures is strongly linked to the total energy components, which can give important information about the stability of the alloy.

  1. Residual stress change by thermal annealing in amorphous Sm-Fe-B thin films

    International Nuclear Information System (INIS)

    Na, S.M.; Suh, S.J.; Kim, H.J.; Lim, S.H.

    2002-01-01

    The change in the residual stress and its effect on mechanical bending and magnetic properties of sputtered amorphous Sm-Fe-B thin films are investigated as a function of annealing temperature. Two stress components of intrinsic compressive stress and tensile stress due to the difference of the thermal expansion coefficients between the substrate and thin film are used to explain the stress state in as-deposited thin films, and the annealing temperature dependence of residual stress, mechanical bending and magnetic properties

  2. Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

    International Nuclear Information System (INIS)

    Liu Fang; Qin Zhixin

    2016-01-01

    Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al 0.45 Ga 0.55 N, which aimed at the solar-blind wavelength. After fluorine plasma treatment and before depositing the Ni/Au Schottky, the samples were thermal annealed in the N 2 gas at 400 °C. The reverse leakage current density of Al 0.45 Ga 0.55 N Schottky diode was reduced by 2 orders of magnitude at −10 V. The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing. Further capacitance–frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies. The capacitance–frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment. (paper)

  3. A comparative study of thermal annealing effects under various atmospheres on nano-structured CdS thin films prepared by CBD

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Lingjun; Li, Jianmin; Chen, Guilin; Zhu, Changfei, E-mail: cfzhu@ustc.edu.cn; Liu, Weifeng, E-mail: liuwf@ustc.edu.cn

    2013-10-05

    Highlights: •Smooth and uniform CdS thin films were deposited successfully by CBD method. •The influence of CdCl{sub 2}-assisted annealing under various atmospheres of CdS films has been investigated. •We gave a more detailed research on annealing temperature after identified the most optimal annealing method. •High quality CdS films were obtained with air–CdCl{sub 2}-assisted treatments at 400 °C for 0.5 h. •GIXRD was used as a new analysis method of CdS in this paper. -- Abstract: Cadmium sulfide (CdS) nanofilms have been deposited on the glass substrate using the chemical bath technique. The effects of CdCl{sub 2}-assisted annealing under different atmosphere (vacuum, Ar and air) on the structural, morphological and optical properties of CdS nanofilms have been studied. After identifying the optimal annealing atmosphere, we also investigated the CdS thin film annealed at different annealing temperature (300, 400 and 500 °C). Films have been characterized by GI-XRD analysis, scanning electron microscopy, and UV–Vis–NIR spectrophotometer. The as-deposited CdS films have been found to be nanocrystalline in nature with a mixture of two crystallographic phases: a hexagonal phase and a cubic phase. After annealed in air with a CdCl{sub 2} coating layer at 400 °C, the films showed pure hexagonal phase, indicating the phase transition of CdS. It was found that the treatment in air with a CdCl{sub 2} coating layer increased the crystallinity and the mean grain size of CdS film, which are advantageous to the application in solar cells as a window layer material.

  4. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  5. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

    2013-01-01

    The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

  6. Effects of thermal annealing on the structural, mechanical, and tribological properties of hard fluorinated carbon films deposited by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Maia da Costa, M. E. H.; Baumvol, I. J. R.; Radke, C.; Jacobsohn, L. G.; Zamora, R. R. M.; Freire, F. L.

    2004-11-01

    Hard amorphous fluorinated carbon films (a-C:F) deposited by plasma enhanced chemical vapor deposition were annealed in vacuum for 30 min in the temperature range of 200-600 °C. The structural and compositional modifications were followed by several analytical techniques: Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. Nanoidentation measurements and lateral force microscopy experiments were carried out in order to provide the film hardness and the friction coefficient, respectively. The internal stress and contact angle were also measured. RBS, ERDA, and XPS results indicate that both fluorine and hydrogen losses occur for annealing temperatures higher than 300 °C. Raman spectroscopy shows a progressive graphitization upon annealing, while the surface became slightly more hydrophobic as revealed by the increase of the contact angle. Following the surface wettability reduction, a decrease of the friction coefficient was observed. These results highlight the influence of the capillary condensation on the nanoscale friction. The film hardness and the internal stress are constant up to 300 °C and decrease for higher annealing temperatures, showing a direct correlation with the atomic density of the films. Since the thickness variation is negligible, the mass loss upon thermal treatment results in amorphous structures with a lower degree of cross-linking, explaining the deterioration of the mechanical properties of the a-C:F films.

  7. Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Yuxiao Guo

    2018-02-01

    Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

  8. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

    2017-03-01

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

  9. Effects of Al substitution and thermal annealing on magnetoelectric Ba0.5Sr1.5Zn2Fe12O22 investigated by the enhancement factor of 57Fe nuclear magnetic resonance.

    Science.gov (United States)

    Kwon, Sangil; Kang, Byeongki; Kim, Changsoo; Jo, Euna; Lee, Soonchil; Chai, Yi Sheng; Chun, Sae Hwan; Kim, Kee Hoon

    2014-04-09

    The magnetoelectric properties of hexaferrite Ba0.5Sr1.5Zn2Fe12O22 are significantly improved by Al substitution and thermal annealing. Measuring the enhancement factor of 57Fe NMR, we found direct microscopic evidence that the magnetic moments of the L and S blocks are rotated by a magnetic field in such a way as to increase the net magnetic moment of a magnetic unit, even after the field is removed. Al substitution makes magnetoelectric property arise easily by suppressing the easy-plane anisotropy. The effect of thermal annealing is to stabilize the multiferroic state by reducing the number of pinning sites and the electron spin fluctuation. The transverse conic structure gradually changes to the alternating longitudinal conic structure where spins fluctuate more severely.

  10. Thermal annealing response following irradiation of a CMOS imager for the JUICE JANUS instrument

    Science.gov (United States)

    Lofthouse-Smith, D.-D.; Soman, M. R.; Allanwood, E. A. H.; Stefanov, K. D.; Holland, A. D.; Leese, M.; Turne, P.

    2018-03-01

    ESA's JUICE (JUpiter ICy moon Explorer) spacecraft is an L-class mission destined for the Jovian system in 2030. Its primary goals are to investigate the conditions for planetary formation and the emergence of life, and how does the solar system work. The JANUS camera, an instrument on JUICE, uses a 4T back illuminated CMOS image sensor, the CIS115 designed by Teledyne e2v. JANUS imager test campaigns are studying the CIS115 following exposure to gammas, protons, electrons and heavy ions, simulating the harsh radiation environment present in the Jovian system. The degradation of 4T CMOS device performance following proton fluences is being studied, as well as the effectiveness of thermal annealing to reverse radiation damage. One key parameter for the JANUS mission is the Dark current of the CIS115, which has been shown to degrade in previous radiation campaigns. A thermal anneal of the CIS115 has been used to accelerate any annealing following the irradiation as well as to study the evolution of any performance characteristics. CIS115s have been irradiated to double the expected End of Life (EOL) levels for displacement damage radiation (2×1010 protons, 10 MeV equivalent). Following this, devices have undergone a thermal anneal cycle at 100oC for 168 hours to reveal the extent to which CIS115 recovers pre-irradiation performance. Dark current activation energy analysis following proton fluence gives information on trap species present in the device and how effective anneal is at removing these trap species. Thermal anneal shows no quantifiable change in the activation energy of the dark current following irradiation.

  11. Optical property of silicon quantum dots embedded in silicon nitride by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baek Hyun, E-mail: bhkim@andrew.cmu.ed [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Davis, Robert F. [Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United Sates (United States); Park, Seong-Ju [Nanophotonic Semiconductors Laboratory, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 500-712 (Korea, Republic of)

    2010-01-01

    We present the effects on the thermal annealing of silicon quantum dots (Si QDs) embedded in silicon nitride. The improved photoluminescence (PL) intensities and the red-shifted PL spectra were obtained with annealing treatment in the range of 700 to 1000 {sup o}C. The shifts of PL spectra were attributed to the increase in the size of Si QDs. The improvement of the PL intensities was also attributed to the reduction of point defects at Si QD/silicon nitride interface and in the silicon nitride due to hydrogen passivation effects.

  12. Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

    International Nuclear Information System (INIS)

    Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

    1996-01-01

    Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

  13. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  14. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  15. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C., E-mail: Paul.Dastoor@newcastle.edu.au [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Feron, Krishna [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); CSIRO Energy Technology, P. O. Box 330, Newcastle NSW 2300 (Australia)

    2014-05-12

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.

  16. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Pankaj; Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C.; Feron, Krishna

    2014-01-01

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and P3HT:indene-C 60 bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles

  17. Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

    Science.gov (United States)

    Tarsoly, Gergely; Pyo, Seungmoon

    2018-06-01

    We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

  18. Self-Healing Thermal Annealing: Surface Morphological Restructuring Control of GaN Nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Conroy, Michele; Li, Haoning; Zubialevich, Vitaly Z.; Kusch, Gunnar; Schmidt, Michael; Collins, Timothy; Glynn, Colm; Martin, Robert W.; O’Dwyer, Colm; Morris, Michael D.; Holmes, Justin D.; Parbrook, Peter J.

    2016-12-07

    With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.

  19. Rapid thermal annealing of FePt and FePt/Cu thin films

    Energy Technology Data Exchange (ETDEWEB)

    Brombacher, Christoph

    2011-01-10

    Chemically ordered FePt is one of the most promising materials to reach the ultimate limitations in storage density of future magnetic recording devices due to its high uniaxial magnetocrystalline anisotropy and a corrosion resistance superior to rare-earth based magnets. In this study, FePt and FePt/Cu bilayers have been sputter deposited at room temperature onto thermally oxidized silicon wafers, glass substrates and self-assembled arrays of spherical SiO{sub 2} particles with diameters down to 10 nm. Millisecond flash lamp annealing, as well as conventional rapid thermal annealing was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1{sub 0} phase. The influence of the annealing temperature, annealing time and the film thickness on the ordering transformation and (001) texture evolution of FePt films with near equiatomic composition was studied. Whereas flash lamp annealed FePt films exhibit a polycrystalline morphology with high chemical L1{sub 0} order, rapid thermal annealing can lead to the formation of chemically ordered FePt films with (001) texture on amorphous SiO{sub 2}/Si substrates. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, rapid thermal annealing to temperatures exceeding 600 C leads to a break up of the continuous FePt film into separated islands. This dewetting behavior was utilized to create regular arrays of FePt nanostructures on SiO{sub 2} particle templates with periods down to 50 nm. The addition of Cu improves the (001) texture formation and chemical ordering for annealing temperatures T{sub a} {<=}600 C. In addition, the magnetic anisotropy and the coercivity of the ternary FePtCu alloy can be effectively tailored by adjusting the Cu content. The prospects of FePtCu based exchange spring media, as well as the magnetic properties of FePtCu nanostructures fabricated

  20. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    Smedskjaer, L.C.

    1981-06-01

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  1. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    International Nuclear Information System (INIS)

    Prado, A. del; San Andres, E.; Martil, I.; Gonzalez-Diaz, G.; Bravo, D.; Lopez, F.J.; Fernandez, M.; Martinez, F.L.

    2003-01-01

    The effect of rapid thermal annealing (RTA) processes on the structural properties of SiO x N y H z films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH 4 , O 2 and N 2 as precursor gases. For SiO x N y H z films with composition close to that of SiO 2 , which have a very low H content, RTA induces thermal relaxation of the lattice and improvement of the structural order. For films of intermediate composition and of compositions close to SiN y H z , the main effect of RTA is the release of H at high temperatures (T>700 deg. C). This H release is more significant in films containing both Si-H and N-H bonds, due to cooperative reactions between both kinds of bonds. In these films the degradation of structural order associated to H release prevails over thermal relaxation, while in those films with only N-H bonds, thermal relaxation predominates. For annealing temperatures in the 500-700 deg. C range, the passivation of dangling bonds by the nonbonded H in the films and the transition from the paramagnetic state to the diamagnetic state of the K center result in a decrease of the density of paramagnetic defects. The H release observed at high annealing temperatures is accompanied by an increase of density of paramagnetic defects

  3. Fast thermal annealing of implantation defects in silicon. Solid phase epitaxy and residual imperfection recovery

    International Nuclear Information System (INIS)

    Adekoya, O.A.

    1987-06-01

    Basic processes ruling the crystal reconstitution in solid phase during fast thermal annealing are studied; the role of electronic and thermodynamic effects at the interface is precised, following the implantations of a donor element (p + ), an acceptor element (B + ) and an intrinsic element (Ge + ). Then, after recrystallization, the electric role of residual point defects is shown together with the possibility of total recovery and an important electric activation of the doping [fr

  4. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Veen, A. van; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3 He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed

  5. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Science.gov (United States)

    van Veen, A.; Schut, H.; Fedorov, A. V.; Labohm, F.; Neeft, E. A. C.; Konings, R. J. M.

    1999-01-01

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV 3He ions with doses varying from 10 15 to 10 16 cm -2 and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2 × 10 15 cm -2 annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  6. The formation of microvoids in MgO by helium ion implantation and thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Veen, A. van E-mail: avveen@iri.tudelft.nl; Schut, H.; Fedorov, A.V.; Labohm, F.; Neeft, E.A.C.; Konings, R.J.M

    1999-01-02

    The formation of microvoids in metal oxides by helium implantation and thermal annealing is observed under similar conditions as has been shown earlier for silicon. Cleaved MgO (1 0 0) single crystals were implanted with 30 keV {sup 3}He ions with doses varying from 10{sup 15} to 10{sup 16} cm{sup -2} and subsequently thermally annealed from RT to 1500 K. Monitoring of the defect depth profile and the retained amount of helium was performed by positron beam analysis and neutron depth profiling, respectively. For a dose larger than 2x10{sup 15} cm{sup -2} annealing of the defects was observed in two stages: at 1000 K helium filled monovacancies dissociated, and other defects still retaining the helium were formed, and at 1300 K all helium left the sample while an increase of positron-valence-electron annihilations was observed, indicating an increase of the volume available in the defects. The voids of nm size were located at shallower depth than the implanted helium. At lower dose no voids were left after high temperature annealing. Voids can also be created, and even more effectively, by hydrogen or deuterium implantation. The voids are stable to temperatures of 1500 K. The use of the nanovoids as a precursor state for nanoprecipitates of metals or other species is discussed.

  7. Evolution of structural and magnetic properties of sputtered nanocrystalline Co thin films with thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Dileep; Gupta, Ajay

    2007-01-01

    Ultrafine grain films of cobalt prepared using ion-beam sputtering have been studied using X-ray diffraction (XRD), X-ray reflectivity (XRR), atomic force microscopy (AFM) and magneto-optical Kerr effect (MOKE) measurements. As-prepared films have very smooth surface owing to the ultrafine nature of the grains. Evolution of the structure and morphology of the film with thermal annealing has been studied and the same is correlated with the magnetic properties. Above an annealing temperature of 300 deg. C, the film gradually transforms from HCP to FCC phase that remains stable at room temperature. A significant contribution of the surface energy, due to small grain size, results in stabilisation of the FCC phase at room temperature. It is found that other processes like stress relaxation, grain texturing and growth also exhibit an enhanced rate above 300 deg. C, and may be associated with an enhanced mobility of the atoms above this temperature. Films possess a uniaxial anisotropy, which exhibits a non-monotonous behaviour with thermal annealing. The observed variation in the anisotropy and coercivity with annealing can be understood in terms of variations in the internal stresses, surface roughness, and grain structure

  8. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  9. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Science.gov (United States)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  10. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  11. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P., E-mail: pmilani@mi.infn.it [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); Sogne, E. [CIMAINA and Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, 20133 Milano (Italy); European School of Molecular Medicine (SEMM), IFOM-IEO, Milano (Italy); Merlini, M. [Dipartimento di Scienze della Terra “Ardito Desio”, Università degli Studi di Milano, via Mangiagalli 32, 20133 Milano (Italy); Ducati, C. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2016-08-07

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  12. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    International Nuclear Information System (INIS)

    Borghi, F.; Lenardi, C.; Podestà, A.; Milani, P.; Sogne, E.; Merlini, M.; Ducati, C.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments.

  13. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.; Sogne, Elisa; Lenardi, C.; Podestà , A.; Merlini, M.; Ducati, C.; Milani, P.

    2016-01-01

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  14. Cluster-assembled cubic zirconia films with tunable and stable nanoscale morphology against thermal annealing

    KAUST Repository

    Borghi, F.

    2016-08-05

    Nanostructured zirconium dioxide (zirconia) films are very promising for catalysis and biotechnological applications: a precise control of the interfacial properties of the material at different length scales and, in particular, at the nanoscale, is therefore necessary. Here, we present the characterization of cluster-assembled zirconia films produced by supersonic cluster beam deposition possessing cubic structure at room temperature and controlled nanoscale morphology. We characterized the effect of thermal annealing in reducing and oxidizing conditions on the crystalline structure, grain dimensions, and topography. We highlight the mechanisms of film growth and phase transitions, which determine the observed interfacial morphological properties and their resilience against thermal treatments. Published by AIP Publishing.

  15. Thermal annealing study on P3HT: PCBM based bulk heterojunction organic solar cells using impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gollu, Sankara Rao, E-mail: sankar.gollu@gmail.com [Plastic Electronics and Energy Lab (PEEL), Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India); Sharma, Ramakant, E-mail: diptig@iitb.ac.in; G, Srinivas, E-mail: diptig@iitb.ac.in; Gupta, Dipti, E-mail: diptig@iitb.ac.in [Plastic Electronics and Energy Lab (PEEL) Department of Metallurgical Engineering and Material Science, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2014-10-15

    Recently, Thermal annealing is an important process for bulk heterojunction organic solar cells (BHJ OSCs) to improve the device efficiency and performance of the organic solar cells. Here in, we have examined the changes in the efficiency and morphology of P3HT: PCBM film according to the thermal annealing temperature to find the changes during the annealing process by measuring the optical absorption, atomic force microscope and X-ray diffraction. We also investigated the effect of different annealing process conditions (without, pre- and post-annealing) on the device performance of the inverted bulk heterojunction organic solar cells consist the structure of ITO/ ZnO / P3HT: PCBM / MoO{sub 3}/ Al by measuring AC impedance characteristics. Particularly, the power conversion efficiency (PCE), crystalline nature of the polymer, light absorption and the surface smoothness of P3HT: PCBM films are significantly improved after the annealing process. These results indicated the improvement in terms of PCE, interface smoothness between the P3HT: PCBM and MoO{sub 3} layers of the post annealed device originated from the decrease of series resistance between P3HT: PCBM layer and Al electrodes, which could be due to decrease in the effective life time of charge carriers.

  16. Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

    International Nuclear Information System (INIS)

    Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

    2008-01-01

    Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

  17. Origin of two maxima in specific heat in enthalpy relaxation under thermal history composed of cooling, annealing, and heating.

    Science.gov (United States)

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2016-12-01

    The origin of two maxima in specific heat observed at the higher and the lower temperatures in the glass-transition region in the heating process has been studied for polymethyl methacrylate and polyvinyl chloride using differential scanning calorimetry, and the calculation was done using the phenomenological model equation under a thermal history of the typical annealing experiment composed of cooling, annealing, and heating. The higher maximum is observed above the glass-transition temperature, and it remains almost unchanged independent of annealing time t_{a}, while the lower one is observed above an annealing temperature T_{a} and shifts toward the higher one, increasing its magnitude with t_{a}. The analysis by the phenomenological model equation proposed in order to interpret the memory effect in the glassy state clarifies that under a typical annealing history, two maxima in specific heat essentially appear. The shift of the lower maximum toward higher temperatures from above T_{a} is caused by an increase in the amount of relaxation during annealing with t_{a}. The annealing temperature and the amount of relaxation during annealing play a major role in the determination of the number of maxima in the specific heat.

  18. Annealing and etching effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A.F.; Sáez-Rodríguez, D.

    2017-01-01

    Thermal annealing and chemical etching effects on the strain and stress sensitivity of polymer optical fibre based sensors are investigated. Bragg grating sensors have been photo-inscribed in PMMA optical fibre and their strain and stress sensitivity has been characterised before and after any...... annealing or etching process. The annealing and etching processes have been tried in different sequence in order to investigate their impact on the sensor's performance. Results show with high confidence that fibre annealing can improve both strain and stress sensitivities. The fibre etching can also...... provide stress sensitivity enhancement, however the strain sensitivity changes seems to be random....

  19. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  20. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  1. Thermal annealing of recoil 56Mn in strontium permanganate under (n,γ) process

    International Nuclear Information System (INIS)

    Mishra, Shuddhodan P.; Vijaya

    2002-01-01

    Chemical stabilization of recoil 56 Mn in strontium permanganate (hydrous and anhydrous) has been investigated with a special reference to pre-and post-activation thermal annealing treatments. The retention of 56 Mn in neutron irradiated strontium permanganate showed significant variation on thermal annealing in both pre-and post-activation heated target. The recoil re-entry process obeys simple first order kinetics and the activation energy deduced for thermal annealing process is very low as computed by classical Arrhenius plots. The results observed are discussed in the light of existing ideas for understanding the recoil stabilization mechanism of parent reformation and the nature of precursors in permanganates. (author)

  2. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    Science.gov (United States)

    Wang, Dong; Chen, Z. Q.; Wang, D. D.; Gong, J.; Cao, C. Y.; Tang, Z.; Huang, L. R.

    2010-11-01

    High purity Fe 2O 3/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2O 3/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2O 4. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2O 3/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.

  3. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    Energy Technology Data Exchange (ETDEWEB)

    Wang Dong [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Chen, Z.Q., E-mail: chenzq@whu.edu.c [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Wang, D.D.; Gong, J. [Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072 (China); Cao, C.Y.; Tang, Z. [Department of Electronic and Engineering, East China Normal University, Shanghai 200241 (China); Huang, L.R. [Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2010-11-15

    High purity Fe{sub 2}O{sub 3}/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 {sup o}C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe{sub 2}O{sub 3}/ZnO nanocomposites were investigated by X-ray diffraction 2{theta} scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe{sub 2}O{sub 4}. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe{sub 2}O{sub 3}/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 {sup o}C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 {sup o}C, suggesting that it is not related with the interfacial defects.

  4. Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

    International Nuclear Information System (INIS)

    Wang Dong; Chen, Z.Q.; Wang, D.D.; Gong, J.; Cao, C.Y.; Tang, Z.; Huang, L.R.

    2010-01-01

    High purity Fe 2 O 3 /ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 o C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2 O 3 /ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2 O 4 . Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2 O 3 /ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 o C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 o C, suggesting that it is not related with the interfacial defects.

  5. A perspective on thermal annealing of reactor pressure vessel materials from the viewpoint of experimental results

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1996-01-01

    It is believed that in the next decade or so, several nuclear reactor pressure vessels (RPVs) may exceed the reference temperature limits set by the pressurized thermal shock screening criteria. One of the options to mitigate the effects of irradiation on RPVs is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory to study the annealing response, or ''recovery'' of several irradiated RPV steels. The fracture toughness is one of the important properties used in the evaluation of the integrity of RPVs. Optimally, the fracture toughness is measured directly by fracture toughness specimens, such as compact tension or precracked Charpy specimens, but is often inferred from the results of Charpy V-notch impact specimens. The experimental results are compared to the predictions of models for embrittlement recovery which have been developed by Eason et al. Some of the issues in annealing that still need to be resolved are discussed

  6. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Directory of Open Access Journals (Sweden)

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  7. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Science.gov (United States)

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  8. Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

    Directory of Open Access Journals (Sweden)

    Manizheh Navasery

    2012-11-01

    Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

  9. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

    International Nuclear Information System (INIS)

    Lim, Way Foong; Quah, Hock Jin; Lu, Qifeng; Mu, Yifei; Ismail, Wan Azli Wan; Rahim, Bazura Abdul; Esa, Siti Rahmah; Kee, Yeh Yee; Zhao, Ce Zhou

    2016-01-01

    Graphical abstract: - Highlights: • Studies of RTA temperatures on La doped ZrO2 atomic layer deposited on 4HSiC. • Oxygen vacancies improved insulating and catalytic properties of La doped ZrO2. • 700 °C annealed sample showed the highest EB, k value, and sensitivity on O2. • La doped ZrO2 was proposed as a potential metal reactive oxide on 4H-SiC. - Abstract: Effects of rapid thermal annealing at different temperatures (700–900 °C) on structural, chemical, and electrical characteristics of lanthanum (La) doped zirconium oxide (ZrO_2) atomic layer deposited on 4H-SiC substrates have been investigated. Chemical composition depth profiling analysis using X-ray photoelectron spectroscopy (XPS) and cross-sectional studies using high resolution transmission electron microscopy equipped with energy dispersive X-ray spectroscopy line scan analysis were insufficient to justify the presence of La in the investigated samples. The minute amount of La present in the bulk oxide was confirmed by chemical depth profiles of time-of-flight secondary ion mass spectrometry. The presence of La in the ZrO_2 lattice led to the formation of oxygen vacancies, which was revealed through binding energy shift for XPS O 1s core level spectra of Zr−O. The highest amount of oxygen vacancies in the sample annealed at 700 °C has yielded the acquisition of the highest electric breakdown field (∼ 6.3 MV/cm) and dielectric constant value (k = 23) as well as the highest current–time (I–t) sensor response towards oxygen gas. The attainment of both the insulating and catalytic properties in the La doped ZrO_2 signified the potential of the doped ZrO_2 as a metal reactive oxide on 4H-SiC substrate.

  10. Composition dependent thermal annealing behaviour of ion tracks in apatite

    Energy Technology Data Exchange (ETDEWEB)

    Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

    2016-07-15

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  11. Influence of thermal annealing on the morphology and structural properties of a conjugated polymer in blends with an organic acceptor material

    CSIR Research Space (South Africa)

    Motaung, DE

    2009-06-01

    Full Text Available variation in morphology during annealing due to the crystallization of C60. The as-prepared P3HT:C60 films have a higher surface roughness and larger cluster size compared to the as-prepared P3HT films. The thermal annealing effects on the optical microscopy...

  12. Sintering Characteristics of Multilayered Thermal Barrier Coatings Under Thermal Gradient and Isothermal High Temperature Annealing Conditions

    Science.gov (United States)

    Rai, Amarendra K.; Schmitt, Michael P.; Bhattacharya, Rabi; Zhu, Dongming; Wolfe, Douglas E.

    2014-01-01

    Pyrochlore oxides have most of the relevant attributes for use as next generation thermal barrier coatings such as phase stability, low sintering kinetics and low thermal conductivity. One of the issues with the pyrochlore oxides is their lower toughness and therefore higher erosion rate compared to the current state-of-the-art TBC material, yttria (6 to 8 wt%) stabilized zirconia (YSZ). In this work, sintering characteristics were investigated for novel multilayered coating consisted of alternating layers of pyrochlore oxide viz Gd2Zr2O7 and t' low k (rare earth oxide doped YSZ). Thermal gradient and isothermal high temperature (1316 C) annealing conditions were used to investigate sintering and cracking in these coatings. The results are then compared with that of relevant monolayered coatings and a baseline YSZ coating.

  13. Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

    Science.gov (United States)

    Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

    2018-01-22

    The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

  14. Effect of annealing temperature on the thermal stress and dislocation density of mc-Si ingot grown by DS process for solar cell application

    Science.gov (United States)

    Sanmugavel, S.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2018-04-01

    90% of the solar industries are using crystalline silicon. Cost wise the multi-crystalline silicon solar cells are better compared to mono crystalline silicon. But because of the presence of grain boundaries, dislocations and impurities, the efficiency of the multi-crystalline silicon solar cells is lower than that of mono crystalline silicon solar cells. By reducing the defect and dislocation we can achieve high conversion efficiency. The velocity of dislocation motion increases with stress. By annealing the grown ingot at proper temperature we can decrease the stress and dislocation. Our simulation results show that the value of stress and dislocation density is decreased by annealing the grown ingot at 1400K and the input parameters can be implemented in real system to grow a better mc-Si ingot for energy harvesting applications.

  15. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon; Fu, Dejun; Yoon, Hyungdo

    2011-01-01

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  16. Improved electrical conduction properties in unintentionally-doped ZnO thin films treated by rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Youngmin; Lee, Choeun; Shim, Eunhee; Jung, Eiwhan; Lee, Jinyong; Kim, Deukyoung; Lee, Sejoon [Dongguk University-Seoul, Seoul (Korea, Republic of); Fu, Dejun [Wuhan University, Wuhan (China); Yoon, Hyungdo [Korea Electronics Technology Institute, Seongnam (Korea, Republic of)

    2011-10-15

    The effects of thermal treatments on the electrical conduction properties for the unintentionally doped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.

  17. Effect of thermal annealing on structural properties of SrGa2S4:Ce thin films prepared by flash evaporation

    International Nuclear Information System (INIS)

    Gambarov, E.F.; Bayramov, A.I.

    2009-01-01

    In the present report the preparation technology and structural characterization of Ce 3 +activated SrGa 2 S 4 thin films are given. SrGa 2 S 4 : e thin films are prepared by so called flash evaporation which is simple and inexpensive method for thin film deposition. X-ray diffraction shows that the as deposited films exhibit amorphous behavior, but after annealing in H S stream, the polycrystalline one. EPMA results indicate nearly stoichiometric composition of the thin films

  18. Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Zhou, L.H.; Zhang, C.H.; Yang, Y.T.; Li, B.S.; Zhang, L.Q.; Fu, Y.C.; Zhang, H.H.

    2009-01-01

    In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 deg. C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.

  19. An assessment of the economic consequences of thermal annealing of a nuclear reactor pressure vessel

    International Nuclear Information System (INIS)

    Griesbach, T.J.; Server, W.L.

    1991-01-01

    The use of a thermal heat treatment to recover mechanical properties which were degraded by neutron radiation exposure is a potential method for assuring reactor pressure vessel licensing life and possible license renewal. 'Wet anneals' at temperatures less than 343degC have been conducted on test reactors in Alaska (SM-1A) and Belgium (BR3). The Soviets have also performed 'dry anneals' at higher temperatures near or above 450degC on several commercial reactor vessels. Technical and economic uncertainties have made utilities in the United States reluctant to seriously consider thermal annealing of large commercial reactor vessels except as a last resort option. However, as a utility begins to experience significant radiation embrittlement or considers extending the operating license life of the vessel, thermal annealing can be a viable option depending upon many considerations. These considerations include other possible remedial measures that can be taken (i.e., flux reduction), economic issues with regard to utility finances, and corporate philosophy. A decision analysis model has been developed to analyze the thermal anneal option in comparison to other alternatives for a number of possible combinations and timing. The results for a postulated vessel and embrittlement condition are presented to show that thermal annealing can be a viable management option which should be taken seriously. (author)

  20. Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application

    Science.gov (United States)

    Aravindan, G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2017-10-01

    Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.

  1. Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

    International Nuclear Information System (INIS)

    Allen Hiser, J.R.

    1993-01-01

    In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on 'Format and Content of Application for Approval for Thermal Annealing of RPV' are also proposed

  2. Proposed rule package on fracture toughness and thermal annealing requirements and guidance for light water reactor vessels

    Energy Technology Data Exchange (ETDEWEB)

    Allen Hiser, J R [UKAEA Harwell Lab. (United Kingdom). Engineering Div.

    1994-12-31

    In the framework of updating and clarification of the fracture toughness and thermal annealing requirements and guidance for light water reactor pressure vessels, proposed revisions concerning the pressurized thermal shock rule, fracture toughness requirements and reactor vessel material surveillance program requirements, are described. A new rule concerning thermal annealing requirements and a draft regulatory guide on `Format and Content of Application for Approval for Thermal Annealing of RPV` are also proposed.

  3. Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

    Science.gov (United States)

    Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

    2018-02-01

    Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

    International Nuclear Information System (INIS)

    Kim, Byung-Jae; Hwang, Ya-Hsi; Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Lu, Liu; Ren, Fan; Holzworth, M. R.; Jones, Kevin S.; Pearton, Stephen J.; Smith, David J.; Kim, Jihyun; Zhang, Ming-Lan

    2015-01-01

    The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing

  5. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  6. Dependence of TL-property changes of natural quartzes on aluminium contents accompanied by thermal annealing treatment

    International Nuclear Information System (INIS)

    Hashimoto, T.; Sakaue, S.; Aoki, H.; Ichino, M.

    1994-01-01

    The TL properties were investigated using both an IPDA (Intensified Photo-Diode Array) spectrometric system and a TLCI (Thermoluminescence Colour Image) method after thermal annealing treatment at several temperatures. An apparent colour change from original blue- (BTL) to red-TL(RTL) has unexpectedly occurred in a Z-cut slice of Madagascar quartz, after an annealing treatment around 1000 o C. From the TL-colour change studies of the Z-cut slice, it was confirmed that original BTL intensities are inversely proportional to the Al contents; the TLCI-patterns of the original or annealed Z-cut slice gave stripe patterns corresponding to Al impurity contents along the crystal growth direction particularly yielding an intense appearance of RTL on higher Al contents after the annealing treatment. This changeability of TL-colour towards RTL after thermal annealing treatment was found to be intimately correlated with the square of Al concentrations, although BTL clearly changed as linearly proportional to Al impurity contents. Finally, the cleavage of Al-O-Al bonds or some sites in the vicinity of Al-O-Al bonds were plausibly considered to play an important role for the formation of RTL colour centres in natural quartzes as a result of the operation of high temperature effects. (Author)

  7. Thermal annealing of fission tracks in fluorapatite, chlorapatite, manganoanapatite, and Durango apatite: experimental results

    International Nuclear Information System (INIS)

    Ravenhurst, C.E.; Roden-Tice, M.K.; Miller, D.S.

    2003-01-01

    It is well known that the optically measured lengths of fission tracks in apatite crystals are a function of etching conditions, crystallographic orientation of the track, composition of the crystal, and the state of thermal annealing. In this study we standardize etching conditions and optimize track length measurability by etching until etch pits formed at the surface of each apatite crystal reached widths of about 0.74 μm. Etching times using 5M HNO 3 at 21 o C were 31 s for Otter Lake, Quebec, fluorapatite; 47 s for Durango, Mexico, apatite; 33 s for Portland, Connecticut, manganoanapatite; and 11 s for Bamle, Norway, chlorapatite. An etching experiment using two etchant strengths (5M and 1.6M HNO 3 ) revealed that, despite significant differences in etch pit shape, fission-track length anisotropy with respect to crystallographic orientation of the tracks is not a chemical etching effect. A series of 227 constant-temperature annealing experiments were carried out on nuclear reactor induced tracks in oriented slices of the apatites. After etching, crystallographic orientations of tracks were measured along with their lengths. The 200-300 track lengths measured for each slice were ellipse-fitted to give the major (c crystallographic direction) and minor (a crystallographic direction) semi-axes used to calculate equivalent isotropic lengths. The equivalent isotropic length is more useful than mean length for thermal history analysis because the variation caused by anisotropy has been removed. Using normalized etching procedures and equivalent isotropic length data, we found that the fluorapatite anneals most readily, followed by Durango apatite, manganoanapatite, and lastly chlorapatite. (author)

  8. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo, K.; Pryds, N.; Theil Kuhn, L.; Esposito, V.; Linderoth, S. [Technical University of Denmark, Fuel Cells and Solid State Chemistry Division, Risoe DTU, Roskilde (Denmark); Heiroth, S.; Lippert, T. [Paul Scherrer Institute, General Energy Research Department, Villigen PSI (Switzerland); Schou, J. [Technical University of Denmark, Department of Photonics Engineering, Roskilde (Denmark)

    2011-09-15

    Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400 C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions {<=}{proportional_to}11 nm. The films show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat treatment at 400 C and 800 C. The effect of the grain coarsening on the electrical characteristics of the layers is investigated and discussed in the context of a variation of the number density of grain boundaries. The results are evaluated with regard to the use of ultrathin CGO10 films as seeding templates for the moderate temperature growth of thick solid electrolyte films with improved oxygen transport properties. (orig.)

  9. Annealing effects on cathodoluminescence of zircon

    Science.gov (United States)

    Tsuchiya, Y.; Nishido, H.; Noumi, Y.

    2011-12-01

    U-Pb zircon dating (e. g., SHRIMP) is an important tool to interpret a history of the minerals at a micrometer-scale, where cathodoluminescence (CL) imaging allows us to recognize internal zones and domains with different chemical compositions and structural disorder at high spatial resolution. The CL of zircon is attributed by various types of emission centers, which are extrinsic ones such as REE impurities and intrinsic ones such as structural defects. Metamictization resulted from radiation damage to the lattice by alpha particles from the decay of U and Th mostly causes an effect on the CL features of zircon as a defect center. However, slightly radiation-damaged zircon, which is almost nondetectable by XRD, has not been characterized using CL method. In this study, annealing effects on CL of zircon has been investigated to clarify a recovery process of the damaged lattice at low radiation dose. A single crystal of zircon from Malawi was selected for CL measurements. It contains HfO2: 2.30 w.t %, U: 241 ppm and Th: 177 ppm. Two plate samples perpendicular to c and a axes were prepared for annealing experiments during 12 hours from room temperature to 1400 degree C. Color CL images were captured using a cold-cathode microscope (Luminoscope: Nuclide ELM-3R). CL spectral measurements were conducted using an SEM (JEOL: JSM-5410) combined with a grating monochromator (Oxford: Mono CL2) to measure CL spectra ranging from 300 to 800 nm in 1 nm steps with a temperature controlled stage. The dispersed CL was collected by a photoncounting method using a photomultiplier tube (Hamamatsu: R2228) and converted to digital data. All CL spectra were corrected for the total instrumental response. Spectral analysis reveals an anisotropy of the CL emission bands related to intrinsic defect center in blue region, radiation-induced defect center from 500 to 700 nm, and trivalent Dy impurity center at 480 and 580 nm, but their relative intensities are almost constant. CL on the

  10. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  11. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  12. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching [Department of Physics and Taiwan SPIN Research Center, National Changhua University of Education, Changhua 50007 (China); Kao, Ming-Jer; Tsai, Ming-Jinn [Industrial Technology Research Institute, Hsinchu 31040 (China); Horng, Lance

    2007-12-15

    In this study, the transient annealing effect on the switching behavior of microstructured Co{sub 60}Fe{sub 20}B{sub 20}-based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200{proportional_to}250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching; Kao, Ming-Jer; Tsai, Ming-Jinn; Horng, Lance

    2007-01-01

    In this study, the transient annealing effect on the switching behavior of microstructured Co 60 Fe 20 B 20 -based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∝250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Pryds, Nini

    2011-01-01

    show high density within the thickness probed in the X-ray reflectivity experiments. Thermally activated grain growth, density decrease, and film surface roughening, which may result in the formation of incoherent CGO10 islands by dewetting below a critical film thickness, are observed upon heat...

  15. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  16. Review of in-service thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1984-01-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper-shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. A test reactor pressure vessel has been wet annealed at less than 343 0 C (650 0 F), and annealing of the Belgian BR-3 reactor vessel has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place is feasible, but solvable engineering problems do exist. The materials with highest radiation sensitivity in the older reactor vessels are submerged-arc weld metals with high copper and nickel concentrations. The limited Charpy V-notch and fracture toughness data available for five such welds were reviewed. The review suggested that significant recovery results from annealing at 454 0 C (850 0 F) for one week. Two of the main concerns with a localized heat treatment at 454 0 C (850 0 F) are the degree of distortion that may occur after the annealing cycle and the extent of residual stresses. A thermal and structural analysis of a reactor vessel for distortions and residual stresses found no problems with the reactor vessel itself but did indicate a rotation at the nozzle region of the vessel that would plastically deform the attached primary piping. Further analytical studies are needed. An American Society for Testing and Materials (ASTM) task group is upgrading and revising the ASTM Recommended Guide for In-Service Annealing of WaterCooled Nuclear Reactor Vessels (E 509-74) with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (for example, the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  17. Effect of annealing on the compositional modulation of InAlAsSb

    Energy Technology Data Exchange (ETDEWEB)

    Baladés, N., E-mail: nuria.balades@uca.es [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Sales, D.L.; Herrera, M.; Delgado, F.J. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); González, M. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701 (United States); Clark, K.; Pinsunkajana, P. [Intelligent Epitaxy Technology, Inc. Richardson, TX, 75801 (United States); Hoven, N.; Hubbard, S. [Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623 (United States); Tomasulo, S.; Walters, J.R. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Molina, S.I. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • A post-growth annealing under As overpressure over 500 °C for several minutes induces a blue-shift in the InAlAsSb emission. • TEM analysis evidences that the small compositional fluctuations of the as-grown samples disappear after being annealed. • Annealing stimulates atomic diffusion of the quaternary, homogenizing their constituents and enhancing structural quality. - Abstract: The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM). This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL) measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.

  18. Thermal engineering of FAPbI3 perovskite material via radiative thermal annealing and in situ XRD

    Science.gov (United States)

    Pool, Vanessa L.; Dou, Benjia; Van Campen, Douglas G.; Klein-Stockert, Talysa R.; Barnes, Frank S.; Shaheen, Sean E.; Ahmad, Md I.; van Hest, Maikel F. A. M.; Toney, Michael F.

    2017-01-01

    Lead halide perovskites have emerged as successful optoelectronic materials with high photovoltaic power conversion efficiencies and low material cost. However, substantial challenges remain in the scalability, stability and fundamental understanding of the materials. Here we present the application of radiative thermal annealing, an easily scalable processing method for synthesizing formamidinium lead iodide (FAPbI3) perovskite solar absorbers. Devices fabricated from films formed via radiative thermal annealing have equivalent efficiencies to those annealed using a conventional hotplate. By coupling results from in situ X-ray diffraction using a radiative thermal annealing system with device performances, we mapped the processing phase space of FAPbI3 and corresponding device efficiencies. Our map of processing-structure-performance space suggests the commonly used FAPbI3 annealing time, 10 min at 170 °C, can be significantly reduced to 40 s at 170 °C without affecting the photovoltaic performance. The Johnson-Mehl-Avrami model was used to determine the activation energy for decomposition of FAPbI3 into PbI2. PMID:28094249

  19. Development of a supplemental surveillance program for reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Server, W.L.; Rosinski, S.T.

    1997-01-01

    The technical decision to thermally anneal a nuclear reactor pressure vessel (RPV) depends upon the level of embrittlement in the RPV steels, the amount of recovery of fracture toughness properties expected from the anneal, and the rate of re-embrittlement after the vessel is placed back into service. The recovery of Charpy impact toughness properties after annealing can be estimated initially by using a recovery model developed using experimental measurements of recovery (such as that developed by Eason et al. for U.S. vessel materials). However, actual validation measurements on plant-specific archived vessel materials (hopefully in the existing surveillance program) are needed; otherwise, irradiated surrogate materials, essentially the same as the RPV steels or bounding in expected behavior, must be utilized. The efficient use of any of these materials requires a supplemental surveillance program focused at both recovery and reirradiation embrittlement. Reconstituted Charpy specimens and new surveillance capsules will most likely be needed as part of this supplemental surveillance program. A new version of ASTM E 509 has recently been approved which provides guidance on thermal annealing in general and specifically for the development of an annealing supplemental surveillance program. The post-anneal re-embrittlement properties are crucial for continued plant operation, and the use of a re-embrittlement model, such as the lateral shift approach, may be overly conservative. This paper illustrates the new ASTM E 509 Standard Guide methodology for an annealing supplemental surveillance program. As an example, the proposed program for the Palisades RPV beltline steels is presented which covers the time from annealing to the end of operating license and beyond, if license renewal is pursued. The Palisades nuclear power plant RPV was planned to be annealed in 1998, but that plant is currently being re-evaluated. The proposed anneal was planned to be conducted at a

  20. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    Science.gov (United States)

    Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-03-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

  1. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    International Nuclear Information System (INIS)

    Wu Shen; Sun Aizhi; Zhai Fuqiang; Wang Jin; Zhang Qian; Xu Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-01-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites. - Highlights: ► Silicone uniformly coated the powder, increased the operating frequency of SMCs. ► The annealing treatment increased the DC properties of SMCs. ► Annealing at 580 °C increased the maximum permeability by 72.5%. ► Compared with epoxy coated, the SMCs had higher resistivity annealing at 580 °C.

  2. Improved silicon surface passivation of APCVD Al2O3 by rapid thermal annealing

    NARCIS (Netherlands)

    Black, L.E.; Allen, T.; McIntosh, K.R.; Cuévas, A.

    2016-01-01

    Short-duration post-deposition thermal treatments at temperatures above those normally used for annealing activation have the potential to further improve the already excellent passivation of crystalline silicon (c-Si) achieved by Al2O3, but have so far received little attention. In this work we

  3. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  4. Magnetic structure of Fe-based amorphous and thermal annealed microwires

    International Nuclear Information System (INIS)

    Olivera, J.; Provencio, M.; Prida, V.M.; Hernando, B.; Santos, J.D.; Perez, M.J.; Gorria, P.; Sanchez, M.L.; Belzunce, F.J.

    2005-01-01

    The magnetic structure of amorphous and thermal annealed glass coated microwires is studied by thermomagnetic, DSC, and Bitter domain pattern techniques. The long-range dipolar interaction between parallel aligned microwires and the appearance of large Barkhausen jumps steps in the axially magnetized loops are discussed in terms of reversal magnetization process

  5. A novel method for biopolymer surface nanostructuring by platinum deposition and subsequent thermal annealing

    Czech Academy of Sciences Publication Activity Database

    Slepička, P.; Juřík, P.; Kolská, Z.; Malinský, Petr; Macková, Anna; Michaljaničová, I.; Švorčík, V.

    2012-01-01

    Roč. 7, č. 671 (2012), s. 1-6 ISSN 1931-7573 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:61389005 Keywords : nanopattering * surface morphology * biopolymer * platinum sputtering * thermal annealing Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.524, year: 2012

  6. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  7. Characterization and luminescent properties of thermally annealed olivines

    International Nuclear Information System (INIS)

    Colin-Garcia, Maria; Correcher, Virgilio; Garcia-Guinea, Javier; Heredia-Barbero, Alejandro; Roman-Lopez, Jesus; Ortega-Gutierrez, Fernando; Negron-Mendoza, Alicia; Ramos-Bernal, Sergio

    2013-01-01

    Olivine is an iron-magnesium solid solution silicate (Mg,Fe) 2 SiO 4 and it is probably one of the most abundant mineral phase in the Solar System, it is present in the primitive carbonaceous meteorites (i.e Allende), and in ordinary chondritic meteorite, comets or terrestrial planets. The olivine grains in those bodies have been exposed to different radiation sources like UV, electrons, cosmic radiation, etc. Here, we explore the effect of ionizing and non ionizing radiation on the luminescence emission of the two well-characterised olivine samples from Mexico and Spain by means of cathodoluminescence and thermoluminescence. The analyses by X-ray dispersive energies in the scanning electron microscopy show differences between the samples in the amount of iron and magnesium and also show traces of rare elements. Olivine exhibits spectral cathodoluminescence emissions of low intensity, explained for the quenching of the luminescence of the iron, and sharp signals assigned as impurities. Cathodoluminescence and thermoluminescence glow curves of the natural, and UV induced olivine samples were obtained. Our results show that thermal treatments at 1100 °C change the mineral molecular structure and the luminescence properties of this mineral phase. These results confirm an active participation of physical factors influencing the luminescent properties of olivine. -- Highlights: ► Luminescent properties of two olivines samples (Mexican and Spanish) were explored. ► EDS show different iron and magnesium content and traces of rare elements on both. ► Olivine exhibits spectral CL emissions of low intensity due to the quenching of iron. ► Treatments at 1100 °C change the mineral structure and its response to UV radiation

  8. Simulation of the diffusion of implanted impurities in silicon structures at the rapid thermal annealing

    International Nuclear Information System (INIS)

    Komarov, F.F.; Komarov, A.F.; Mironov, A.M.; Makarevich, Yu.V.; Miskevich, S.A.; Zayats, G.M.

    2011-01-01

    Physical and mathematical models and numerical simulation of the diffusion of implanted impurities during rapid thermal treatment of silicon structures are discussed. The calculation results correspond to the experimental results with a sufficient accuracy. A simulation software system has been developed that is integrated into ATHENA simulation system developed by Silvaco Inc. This program can simulate processes of the low-energy implantation of B, BF 2 , P, As, Sb, C ions into the silicon structures and subsequent rapid thermal annealing. (authors)

  9. Thermal design and analysis of the HTGR fuel element vertical carbonizing and annealing furnace

    International Nuclear Information System (INIS)

    Llewellyn, G.H.

    1977-06-01

    Computer analyses of the thermal design for the proposed HTGR fuel element vertical carbonizing and annealing furnace were performed to verify its capability and to determine the required power input and distribution. Although the furnace is designed for continuous operation, steady-state temperature distributions were obtained by assuming internal heat generation in the fuel elements to simulate their mass movement. The furnace thermal design, the analysis methods, and the results are discussed herein

  10. Improved luminescence intensity and stability of thermal annealed ZnO incorporated Alq3 composite films.

    Science.gov (United States)

    Cuba, M; Muralidharan, G

    2015-11-01

    The 30 wt% of ZnO (weight percentage of ZnO has been optimised) incorporated tris- (8-hydroxyquinoline)aluminum (Alq3) has been synthesised and coated on to glass substrates using dip coating method. The structural and optical properties of the Alq3/ZnO composite film after thermal annealing from 50 to 300 °C insteps 50° has been studied and reported. XRD pattern reveals the presence of crystalline ZnO in all the annealed films. The films annealed above 150 °C reveal the presence of crystalline Alq3 along with crystalline ZnO. The FTIR spectra confirm the presence of hydroxyquinoline and ZnO vibration in all the annealed composite films. The composite films annealed above 150 °C show a partial sublimation and degradation of hydroxyquinoline compounds. The ZnO incorporated composite films (Alq3/ZnO) exhibit two emission peaks, one corresponding to ZnO at 487 nm and another at 513 nm due to Alq3. The films annealed at 200 °C exhibit maximum photoluminescence (PL) intensity than pristine film at 513 nm when excited at 390 nm.

  11. Characterization for Ceramic-coated magnets using E-beam and thermal annealing methods

    International Nuclear Information System (INIS)

    Kim, Hyug Jong; Kim, Hee Gyu; Kang, In Gu; Kim, Min Wan; Yang, Ki Ho; Lee, Byung Cheol; Choi, Byung Ho

    2009-01-01

    Hard magnet was usually used by coating SiO 2 ceramic thick films followed by the thermal annealing process. In this work, the alternative annealing process for NdFeB magnets using e-beam sources(1∼2 MeV, 50∼400 kGy) was investigated. NdFeB magnets was coated with ceramic thick films using the spray method. The optimal annealing parameter for e-beam source reveals to be 1 MeV and 300 kGy. The sample prepared at 1 MeV and 300 kGy was characterized by the analysis of the surface morphology, film hardness, adhesion and chemical stability. The mechanical property of thick film, especially film hardness, is better than that of thermal annealed samples at 180 .deg. C. As a result, e-beam annealing process will be one of candidate and attractive heat treatment process. In future, manufacturing process will be carried out in cooperation with the magnet company

  12. Phase transformation from cubic ZnS to hexagonal ZnO by thermal annealing

    Science.gov (United States)

    Mahmood, K.; Asghar, M.; Amin, N.; Ali, Adnan

    2015-03-01

    We have investigated the mechanism of phase transformation from ZnS to hexagonal ZnO by high-temperature thermal annealing. The ZnS thin films were grown on Si (001) substrate by thermal evaporation system using ZnS powder as source material. The grown films were annealed at different temperatures and characterized by X-ray diffraction (XRD), photoluminescence (PL), four-point probe, scanning electron microscope (SEM) and energy dispersive X-ray diffraction (EDX). The results demonstrated that as-deposited ZnS film has mixed phases but high-temperature annealing leads to transition from ZnS to ZnO. The observed result can be explained as a two-step process: (1) high-energy O atoms replaced S atoms in lattice during annealing process, and (2) S atoms diffused into substrate and/or diffused out of the sample. The dissociation energy of ZnS calculated from the Arrhenius plot of 1000/T versus log (resistivity) was found to be 3.1 eV. PL spectra of as-grown sample exhibits a characteristic green emission at 2.4 eV of ZnS but annealed samples consist of band-to-band and defect emission of ZnO at 3.29 eV and 2.5 eV respectively. SEM and EDX measurements were additionally performed to strengthen the argument.

  13. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    Science.gov (United States)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  14. Structural, morphological and optical properties of thermal annealed TiO thin films

    International Nuclear Information System (INIS)

    Zribi, M.; Kanzari, M.; Rezig, B.

    2008-01-01

    Structural, morphological and optical properties of TiO thin films grown by single source thermal evaporation method were studied. The films were annealed from 300 to 520 deg. C in air after evaporation. Qualitative film analysis was performed with X-ray diffraction, atomic force microscopy and optical transmittance and reflectance spectra. A correlation was established between the optical properties, surface roughness and growth morphology of the evaporated TiO thin films. The X-ray diffraction spectra indicated the presence of the TiO 2 phase for the annealing temperature above 400 deg. C

  15. Synthesis of borides in molybdenum implanted by B+ ions under thermal and electron annealing

    International Nuclear Information System (INIS)

    Kazdaev, Kh.R.; Akchulakov, M.T.; Bayadilov, E.M.; Ehngel'ko, V.I.; Lazarenko, A.V.; Chebukov, E.S.

    1989-01-01

    The possibility of formation of borides in the near surface layers of monocrystalline molybdenum implanted by boron ions at 35 keV energy under thermal and pulsed electron annealing by an electon beam at 140 keV energy is investigated. It is found that implantation of boron ions into molybdenum with subsequent thermal annealing permits to produce both molybdenum monoboride (α-MoB) and boride (γ-Mo 2 B) with rather different formation mechanisms. Formation of the α-MoB phase occurs with the temperature elevation from the centers appeared during implantation, while the γ-Mo 2 B phase appears only on heating the implanted layers up to definite temperature as a result of the phase transformation of the solid solution into a chemical compound. Pulsed electron annealing instead of thermal annealing results mainly in formation of molybdenum boride (γ-Mo 2 B), the state of structure is determined by the degree of heating of implanted layers and their durable stay at temperatures exceeding the threshold values

  16. Comparison between thermal annealing and ion mixing of alloyed Ni-W films on Si. I

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between Ni-W alloys and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by sputtering of Ni-W alloys, both Ni-rich and W-rich, onto the Si substrates, and followed by either furnace annealing (200--900 0 C) or ion mixing (2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). In general, thermal annealing and ion mixing lead to similar reactions. Phase separation between Ni and W with Ni silicides formed next to the Si substrate and W silicide formed on the surface was observed for both Ni-rich and W-rich samples under thermal annealing. Phase separation was also observed for Ni-rich samples under ion mixing; however, a Ni-W-Si ternary compound was possibly formed for ion-mixed W-rich samples. These reactions were rationalized in terms of the mobilities of various atoms and the energetics of the systems

  17. Effect of annealing on field emission properties of nanodiamond coating

    International Nuclear Information System (INIS)

    Zhai, C.X.; Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y.

    2011-01-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  18. Effect of annealing on field emission properties of nanodiamond coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, C.X., E-mail: zhaicatty@126.co [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China); Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y. [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China)

    2011-03-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  19. Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

    Science.gov (United States)

    Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

    2015-03-01

    In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

  20. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  1. Steel impurity element effects on postirradiation properties recovery by annealing

    International Nuclear Information System (INIS)

    Hawthorne, J.R.

    1987-01-01

    The influence of copper content and phosphorus content on notch ductility recovery by 399 0 C postirradiation heat treatment was explored for A 533-B and A 302-B pressure vessel steels. Charpy-V (C/sub V/) specimens for the investigation were obtained from ten plates produced from four (4-way split) laboratory melts. The plates were 15.2 mm thick but were heat treated to reproduce the microstructure of 150-mm and thicker A 302-B plates at the quarter-thickness location. The C/sub V/ specimens were irradiated in two assemblies at 288 0 C (550 0 F) to a fluence of --2.5 x 10/sup 19/ n/cm/sup 2/ in a light-water-cooled and moderated test reactor. Notch ductility properties in the asirradiated and 399 0 C, 168 h postirradiation-annealed conditions were determined. In addition, separate sets of specimens were thermally conditioned at 288 0 C and at 288 0 C followed by 399 0 C to benchmark the effects of temperature in the absence of irradiation. The results indicate that copper has a significant influence on the magnitude of residual embrittlement after annealing. In contrast, phosphorus contents in the range of 0.002 to 0.025% were found not to have an effect on residual embrittlement either in high or low copper steels. Essentially full recovery in 41-J transition temperature was observed for high phosphorus, low copper content steels. Effects of nickel alloying on recovery behavior were also investigated through data comparisons for A 302-B versus A 533-B plates

  2. An anti-bacterial approach to nanoscale roughening of biomimetic rice-like pattern PP by thermal annealing

    Science.gov (United States)

    Jafari Nodoushan, Emad; Ebrahimi, Nadereh Golshan; Ayazi, Masoumeh

    2017-11-01

    In this paper, we introduced thermal annealing treatment as an effective way of increasing the nanoscale roughness of a semi-crystalline polymer surface. Annealing treatment applied to a biomimetic microscale pattern of rice leaf to achieve a superhydrophobic surface with a hierarchical roughness. Resulted surfaces was characterized by XRD, AFM and FE-SEM instruments and showed an increase of roughness and cristallinity within both time and temperature of treatment. These two parameters also impact on measured static contact angle up to 158°. Bacterial attachment potency has an inverse relationship with the similarity of surface pattern dimensions and bacterial size and due to that, thermal annealing could be an effective way to create anti-bacterial surface beyond its effect on water repellency. Point in case, the anti-bacterial properties of produced water-repellence surfaces of PP were measured and counted colonies of both gram-negative (E. coli) and gram-positive (S. aureus) bacteria reduced with the nature of PP and hierarchical pattern on that. Anti-bacterial characterization of the resulted surface reveals a stunning reduction in adhesion of gram-positive bacteria to the surface. S. aureus reduction rates equaled to 95% and 66% when compared to control blank plate and smooth surface of PP. Moreover, it also could affect the other type of bacteria, gram-negative (E. coli). In the latter case, adhesion reduction rates calculated 66% and 53% when against to the same controls, respectively.

  3. Influence of Rapid Thermal Annealing on the Characteristics of InGaN/GaN MQWs

    Directory of Open Access Journals (Sweden)

    Tian Yuan

    2016-01-01

    Full Text Available N-type InGaN/GaN multiple-quantum-wells (MQWs were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD. The crystal quality and optical properties of samples after rapid thermal annealing (RTA at different temperatures in a range from 400 to 800°C are investigated by X-ray diffraction (XRD and photoluminescence (PL spectrum. The experimental results show that the peaks of InGaN, InN and In can be observed in all samples. And the results are induced by the phase separation and In-clusters. The luminescence peak of the samples annealed showed a red shift. It is caused by strain stress relaxation during the RTA process. Furthermore, some defects can be eliminated and the best annealing temperature is from 500°C to 700°C.

  4. Recent evaluation of 'wet' thermal annealing to resolve reactor pressure vessel embrittlement

    International Nuclear Information System (INIS)

    Server, W.L.; Biemiller, E.C.

    1993-01-01

    Prior to the decision to close the Yankee Rowe plant in 1992, a great deal of effort was expended in trying to resolve the degree of neutron embrittlement that the reactor pressure vessel had experienced after 30 years of operation. One mitigative measure that was examined in detail was the possibility of performing a relatively low temperature thermal anneal (at approximately 650 deg. F) to partially restore the original design level of mechanical properties of the reactor pressure vessel beltline region which were lost due to the neutron radiation exposure. This low temperature anneal was to involve heating of the primary coolant water using pump heat in a similar manner as that used to anneal the Belgian BR-3 reactor pressure vessel in the early 1980s. This 'wet' anneal was successful in recovering mechanical properties for the BR-3 vessel, but the extent of the recovery, as well as the rate of re-embrittlement after the anneal, were issues that were difficult to quantify since the exact reactor pressure vessel steels were not available for experimental verification. For the case of Yankee Rowe, material was available from past surveillance programs for at least one of the materials in the vessel, as well as materials obtained from various sources which could act as bounding surrogates. An irradiation /annealing/reirradiation program was developed to better quantify the degree of recovery and re-embrittlement for these materials, but this program was halted before significant test results were obtained. Prior to the initiation of the testing program, a review of past annealing data was performed and the data were scrutinized for direct relevance to the annealing response of the Yankee Rowe vessel. This paper discusses the results derived from this review. The results from the critical review of the past annealing data indicated that a 'wet' anneal of the Yankee Rowe vessel may have been successful in reducing the degree of embrittlement to the point that the

  5. Epitaxial CdSe-Au nanocrystal heterostructures by thermal annealing.

    Science.gov (United States)

    Figuerola, Albert; van Huis, Marijn; Zanella, Marco; Genovese, Alessandro; Marras, Sergio; Falqui, Andrea; Zandbergen, Henny W; Cingolani, Roberto; Manna, Liberato

    2010-08-11

    The thermal evolution of a collection of heterogeneous CdSe-Au nanosystems (Au-decorated CdSe nanorods, networks, vertical assemblies) prepared by wet-chemical approaches was monitored in situ in the transmission electron microscope. In contrast to interfaces that are formed during kinetically controlled wet chemical synthesis, heating under vacuum conditions results in distinct and well-defined CdSe/Au interfaces, located at the CdSe polar surfaces. The high quality of these interfaces should make the heterostructures more suitable for use in nanoscale electronic devices.

  6. Phosphorus-defect interactions during thermal annealing of ion implanted silicon

    Science.gov (United States)

    Keys, Patrick Henry

    Ion implantation of dopant atoms into silicon generates nonequilibrium levels of crystal defects that can lead to the detrimental effects of transient enhanced diffusion (TED), incomplete dopant activation, and p-n junction leakage. In order to control these effects, it is vital to have a clear understanding of dopant-defect interactions and develop models that account for these interactions. This research focuses on experimentally investigating and modeling the clustering of phosphorus dopant atoms with silicon interstitials. Damage recovery of 40keV Si+ implants in phosphorus doped wells is experimentally analyzed. The effects of background phosphorus concentration, self implant dose, and anneal temperature are investigated. Phosphorus concentrations ranging from 2.0 x 1017 to 4.0 x 1019 cm-3 and Si+ doses ranging from 5.0 x 1013 cm-2 to 2.0 x 1014 cm-2 are studied during 650-800°C anneals. A dramatic reduction in the number of interstitials bound in {311} defects with increasing phosphorus background concentration is observed. It is suggested that the reduction of interstitials in {311} defects at high phosphorus concentrations is due to the formation of phosphorus-interstitial clusters (PICs). The critical concentration for clustering (approximately 1.0 x 1019 cm-3 at 750°C) is strongly temperature dependent and in close agreement with the kink concentration of phosphorus diffusion. Information gained from these "well experiments" is applied to the study of direct phosphorus implantation. An experimental study is conducted on 40keV phosphorus implanted to a dose of 1.0 x 1014 cm-2 during 650-800°C anneals. Electrically inactive PICs are shown to form at concentrations below the solid solubility limit due to high interstitial supersaturations. Data useful for developing a model to accurately predict phosphorus diffusion under nonequilibrium conditions are extracted from the experimental results. A cluster-mediated diffusion model is developed using the

  7. Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2015-03-28

    We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

  8. Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation

    International Nuclear Information System (INIS)

    Song, Ji Eun; Ko, Taeg Yeoung; Ryu, Sun Min

    2010-01-01

    Raman spectroscopy was combined with AFM to investigate the effects of thermal annealing on the graphene samples prepared by the widely used micromechanical exfoliation method. Following annealing cycles, adhesive residues were shown to contaminate graphene sheets with thin molecular layers in their close vicinity causing several new intense Raman bands. Detailed investigation shows that the Raman scattering is very strong and may be enhanced by the interaction with graphene. Although the current study does not pinpoint detailed origins for the new Raman bands, the presented results stress that graphene prepared by the above method may require extra cautions when treated with heat or possibly solvents. Since its isolation from graphite, graphene has drawn a lot of experimental and theoretical research. These efforts have been mostly in pursuit of various applications such as electronics, sensors, stretchable transparent electrodes, and various composite materials. To accomplish such graphene-based applications, understanding chemical interactions of this new material with environments during various processing treatments will become more important. Since thermal annealing is widely used in various research of graphene for varying purposes such as cleaning, nanostructuring, reactions, etc., understanding annealing-induced effects is prerequisite to many fundamental studies of graphene. In this regard, it is to be noted that there has been a controversy on the cause of the annealing-induced hole doping in graphene

  9. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation of compressive strain by 0.41 ± 0.04 GPa. The strain relief promises a marked reduction in threading dislocation for subsequent epitaxial growth.

  10. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    International Nuclear Information System (INIS)

    Mtangi, W.; Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van; Nyamhere, C.

    2012-01-01

    Highlights: ► Highly rectifying Pd/ZnO contacts have been fabricated. ► The rectification behaviour decrease with annealing temperature. ► The surface donor concentration increases with increase in annealing temperature. ► The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current–voltage (IV) and capacitance–voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at −1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 ± 0.03) eV after annealing at 550 °C. The reverse current has been measured as (2.10 ± 0.01) × 10 −10 A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 °C to (1.56 ± 0.01) × 10 −5 A. The depletion layer width measured at −2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 μm after annealing at 200 °C to 0.24 μm after annealing at 500 °C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 × 10 15 cm −3 at 200 °C to 6.06 × 10 16 cm −3 after annealing at 550 °C. This increase in the volume concentration has been explained as an effect of a conductive channel that shifts closer to the surface after sample annealing. The series resistance has been observed to decrease with increase in annealing temperature. The Pd contacts have shown high stability up to an annealing temperature of 250 °C as revealed by the IV

  11. Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Auret, F.D.; Chawanda, A.; Janse van Rensburg, P.J.; Coelho, S.M.M.; Nel, J.M.; Diale, M.; Schalkwyk, L. van [Department of Physics, University of Pretoria, Private Bag X20, Hatfield 0028 (South Africa); Nyamhere, C. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Highly rectifying Pd/ZnO contacts have been fabricated. Black-Right-Pointing-Pointer The rectification behaviour decrease with annealing temperature. Black-Right-Pointing-Pointer The surface donor concentration increases with increase in annealing temperature. Black-Right-Pointing-Pointer The depletion layer width at a specific reverse voltage decreases with increase in annealing temperature. - Abstract: Current-voltage (IV) and capacitance-voltage (CV) measurement techniques have successfully been employed to study the effects of annealing highly rectifying Pd/ZnO Schottky contacts. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 {+-} 0.02) eV has been calculated by assuming pure thermionic emission for the as-deposited material and as (0.56 {+-} 0.03) eV after annealing at 550 Degree-Sign C. The reverse current has been measured as (2.10 {+-} 0.01) Multiplication-Sign 10{sup -10} A for the as-deposited and increases by 5 orders of magnitude after annealing at 550 Degree-Sign C to (1.56 {+-} 0.01) Multiplication-Sign 10{sup -5} A. The depletion layer width measured at -2.0 V has shown a strong dependence on thermal annealing as it decreases from 1.09 {mu}m after annealing at 200 Degree-Sign C to 0.24 {mu}m after annealing at 500 Degree-Sign C, resulting in the modification of the dopant concentration within the depletion region and hence the current flowing through the interface from pure thermionic emission to thermionic field emission with the donor concentrations increasing from 6.90 Multiplication-Sign 10{sup 15} cm{sup -3} at 200 Degree-Sign C to 6.06 Multiplication-Sign 10{sup 16} cm{sup -3} after annealing at 550 Degree-Sign C. This increase in the volume concentration has been explained as an effect of a conductive channel

  12. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  13. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  14. Study on the influence of annealing effects in GaN VPE

    International Nuclear Information System (INIS)

    Furtado, M.

    1983-06-01

    The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt

  15. Evolution of interface and surface structures of ZnO/Al2 O3 multilayers upon rapid thermal annealing

    Science.gov (United States)

    Liu, H. H.; Chen, Q. Y.; Chang, C. F.; Hsieh, W. C.; Wadekar, P. V.; Huang, H. C.; Liao, H. H.; Seo, H. W.; Chu, W. K.

    2015-03-01

    ZnO ∖Al2O3 multilayers were deposited on sapphires by atomic layer deposition at 85°C. This low substrate temperature ensures good interface smoothness useful for study of interfacial reaction or interdiffusion. Our study aimed at the effects of rapid thermal annealing at different annealing temperatures, times and PAr:PO2. XRR and XRD techniques were used to investigate the kinetics from which various terms of the activation energies could be determined. HR-TEM and electron diffraction were carried out to correlate the microstructures and interfacial alignments as a result of the reactions. AFM were used to assist SEM profiling of the surface morphological evolution in association with the TEM observations.

  16. Mechanism of magnetoresistance ratio enhancement in MgO/NiFe/MgO heterostructure by rapid thermal annealing

    Science.gov (United States)

    Zhao, Chong-Jun; Liu, Yang; Zhang, Jing-Yan; Sun, Li; Ding, Lei; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Yu, Guang-Hua

    2012-08-01

    To reveal thermal effects on the film quality/microstructure evolution and the resulted magnetoresistance (MR) ratio in MgO/NiFe/MgO heterostructures, positron annihilation spectroscopy studies have been performed. It is found that the ionic interstitials in the MgO layers recombine with the nearby vacancies at lower annealing temperatures (200-300 °C) and lead to a slow increase in sample MR. Meanwhile, vacancy defects agglomeration/removal and ordering acceleration in MgO will occur at higher annealing temperatures (450-550 °C) and the improved MgO and MgO/NiFe interfaces microstructure are responsible for the observed significant MR enhancement.

  17. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  18. The preliminary results of the thermal annealing processes performed on the RPVs NPP V-1 in Jaslovske Bohunice

    Energy Technology Data Exchange (ETDEWEB)

    Kupca, L; Brezina, M; Beno, P [Vyskumny Ustav Jadrovych Elektrarni, Trnava (Slovakia)

    1994-12-31

    Samples of weld and base metal above and below the weld were taken from RPV material in the V-230 type NPP V-1 in Bohunice; hardness measurements were carried out across the weld on the external surface of the RPV under the thermal shielding, before and after annealing. Results are presented and the annealing procedure efficiency is discussed. (authors). 13 refs., 5 figs.

  19. Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

    International Nuclear Information System (INIS)

    Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

    2005-01-01

    This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

  20. Annealing effects in low upper-shelf welds (series 9)

    International Nuclear Information System (INIS)

    Iskander, S.K.; Nanstad, R.K.

    1995-01-01

    The purpose of the Ninth Irradiation Series is to evaluate the correlation between fracture toughness and CVN impact energy during irradiation, annealing, and reirradiation (IAR). Results of annealing CVN specimens from the low-USE welds from the Midland beltline and nozzle course welds, as well as HSST plate 02 and HSSI weld 73W are given. Also presented is the effect of annealing on the initiation fracture toughness of annealed material from Midland beltline weld and HSST plate 02. The results from capsule 10-5 specimens of weld 73W confirm those previously obtained on the so-called undersize specimens that were irradiated in the Fifth Irradiation Series, namely that the recovery due to annealing at 343 degrees C (650 degrees F) for 1 week is insignificant. The fabrication of major components for the IAR facility for two positions on the east side of the FNR at the University of Michigan has begun. Fabrication of two reusable capsules (one for temperature verification and the other for dosimetry verification), as well as two capsules for IAR, studies is also under way. The design of a reusable capsule capable of reirradiating previously irradiated and annealed CVN and 1T C(T) specimens is also progressing. The data acquisition and control (DAC) instrumentation for the first two IAR facilities is essentially complete and awaiting completion of the IAR facilities and temperature test capsule for checkout and control algorithm development

  1. Effect of oxidation and annealing temperature on optical and ...

    Indian Academy of Sciences (India)

    Administrator

    Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

  2. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    Science.gov (United States)

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In 2 Se 3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In 2 Se 3 vapor and produce the high uniformity In 2 Se 3 nanowires. The in situ annealing TEM is used to realize the effect of heating

  3. Photo annealing effect on p-doped inverted organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.; Jiang, Xiaomei, E-mail: xjiang@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2014-06-28

    We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

  4. Post-deposition thermal annealing studies of hydrogenated microcrystalline silicon deposited at 40 deg. C

    International Nuclear Information System (INIS)

    Bronsveld, P.C.P.; Wagt, H.J. van der; Rath, J.K.; Schropp, R.E.I.; Beyer, W.

    2007-01-01

    Post-deposition thermal annealing studies, including gas effusion measurements, measurements of infrared absorption versus annealing state, cross-sectional transmission electron microscopy (X-TEM) and atomic force microscopy (AFM), are used for structural characterization of hydrogenated amorphous and microcrystalline silicon films, prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at low substrate temperature (T S ). Such films are of interest for application in thin semiconductor devices deposited on cheap plastics. For T S ∼ 40 deg. C, H-evolution shows rather complicated spectra for (near-) microcrystalline material, with hydrogen effusion maxima seen at ∼ 200-250 deg. C, 380 deg. C and ∼ 450-500 deg. C, while for the amorphous material typical spectra for good-quality dense material are found. Effusion experiments of implanted He demonstrate for the microcrystalline material the presence of a rather open (void-rich) structure. A similar tendency can be concluded from Ne effusion experiments. Fourier Transform infrared (FTIR) spectra of stepwise annealed samples show Si-H bond rupture already at annealing temperatures of 150 deg. C. Combined AFM/X-TEM studies reveal a columnar microstructure for all of these (near-) microcrystalline materials, of which the open structure is the most probable explanation of the shift of the H-effusion maximum in (near-) microcrystalline material to lower temperature

  5. Improved behavior of cooper-amine complexes during thermal annealing for conductive thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Ayag, Kevin Ray; Panama, Gustavo; Paul, Shrabani; Kim, Hong Doo [Dept. of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin (Korea, Republic of)

    2017-02-15

    Previous studies successfully produced conductive thin films from organo-metallic-compounds-based inks. Some inks like those made from copper salt and amines, however, tend to move during thermal annealing and, thus, affect the conductive pattern on the substrate. In this study, conductive inks were synthesized by forming complexes of copper with amines and/or blended amines. To build-up an organo-metallic framework and preserve the pattern throughout the annealing period, diamine was added to the complex in different proportions. The prepared inks were coated on glass substrate and were annealed on a hot plate at 170°C under the gaseous mixture of formic acid and alcohol for 5 min. The metallic film was observed to retain the original pattern of the ink during and after annealing. Adhesion on the substrate was also improved. Inks with blended amines produced films with lower resistivities. The lowest electrical resistivity recorded was 4.99 μΩ cm, three times that of bulk copper.

  6. The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4 H-SiC

    Science.gov (United States)

    Omotoso, E.; Auret, F. D.; Igumbor, E.; Tunhuma, S. M.; Danga, H. T.; Ngoepe, P. N. M.; Taleatu, B. A.; Meyer, W. E.

    2018-05-01

    The effects of isochronal annealing on the electrical, morphological and structural characteristics of Au/Ni/4 H-SiC Schottky barrier diodes (SBDs) have been studied. Current-voltage ( I- V), capacitance-voltage ( C- V), deep-level transient spectroscopy, scanning electron microscope (SEM) and X-ray diffraction measurements were employed to study the thermal effect on the characteristics of the SBDs. Prior to thermal annealing of Schottky contacts, the I- V measurements results confirmed the good rectification behaviour with ideality factor of 1.06, Schottky barrier height of 1.20 eV and series resistance of 7 Ω. The rectification properties after annealing was maintained up to an annealing temperature of 500 °C, but deviated slightly above 500 °C. The uncompensated ionized donor concentration decreased with annealing temperature, which could be attributed to out-diffusion of the 4 H-SiC into the Au/Ni contacts and decrease in bonding due to formation of nickel silicides. We observed the presence of four deep-level defects with energies 0.09, 0.11, 0.16 and 0.65 eV below the conduction band before and after the isochronal annealing up to 600 °C. The conclusion drawn was that annealing did not affect the number of deep-level defects present in Au/Ni/4 H-SiC contacts. The variations in electrical properties of the devices were attributed to the phase transformations and interfacial reactions that occurred after isochronal annealing.

  7. Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

    International Nuclear Information System (INIS)

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

    2013-01-01

    The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

  8. Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing

    International Nuclear Information System (INIS)

    Kahen, K.B.; Rajeswaran, G.; Lee, S.T.

    1988-01-01

    A mechanism for the transient-enhanced interdiffusion of GaAs-AlGaAs interfaces during rapid thermal annealing of ion-implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post-implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three-dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity-enhanced diffusion remains a weak effect

  9. Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1993-01-01

    process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

  10. Thermal Annealing Reduces Geminate Recombination in TQ1:N2200 All-Polymer Solar Cells

    KAUST Repository

    Karuthedath, Safakath

    2018-03-27

    A combination of steady-state and time-resolved spectroscopic measurements is used to investigate the photophysics of the all-polymer bulk heterojunction system TQ1:N2200. Upon thermal annealing a doubling of the external quantum efficiency and an improved fill factor (FF) is observed, resulting in an increase in the power conversion efficiency. Carrier extraction is similar for both blends, as demonstrated by time-resolved electric-field-induced second harmonic generation experiments in conjunction with transient photocurrent studies, spanning the ps-µs time range. Complementary transient absorption spectroscopy measurements reveal that the different quantum efficiencies originate from differences in charge carrier separation and recombination at the polymer-polymer interface: in as-spun samples ~35 % of the charges are bound in interfacial charge-transfer states and recombine geminately, while this pool is reduced to ~7 % in thermally-annealed sample, resulting in higher short-circuit currents. Time-delayed collection field experiments demonstrate a field-dependent charge generation process in as-spun samples, which reduces the FF. In contrast, field-dependence of charge generation is weak in annealed films. While both devices exhibit significant non-geminate recombination competing with charge extraction, causing low FFs, our results demonstrate that the donor/acceptor interface in all-polymer solar cells can be favourably altered to enhance charge separation, without compromising charge transport and extraction.

  11. Comparison between thermal annealing and ion mixing of multilayered Ni-W films on Si. II

    International Nuclear Information System (INIS)

    Pai, C.S.; Lau, S.S.; Poker, D.B.; Hung, L.S.

    1985-01-01

    The reactions between bilayered Ni/W films and Si substrates induced by thermal annealing and ion mixing were investigated and compared. Samples were prepared by electron-beam sequential deposition of Ni and W onto the Si substrates and following by either furnace annealing (approx. 200--900 0 C) or ion mixing (approx. 2 x 10 15 -- 4 x 10 16 86 Kr + ions/cm 2 ). The reactions were analyzed by Rutherford backscattering and x-ray diffraction (Read camera). Thermal annealing of both W/Ni/Si and Ni/W/Si samples led to the formation of Ni silicide next to the Si substrate and W silicide on the sample surface (layer reversal between Ni and W in the Ni/W/Si case). Ion mixing of W/Ni/Si samples led to the formation of Ni silicide with a thin layer of Ni-W-Si mixture located at the sample surface. For Ni/W/Si samples a ternary amorphous mixture of Ni-W-Si was obtained with ion mixing. These reactions were rationalized in terms of the mobilities of various atoms and the intermixings between layers

  12. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  13. Thermal annealing and recoil reactions of 128I atoms in thermal neutron activated iodate-nitrate mixed crystals

    International Nuclear Information System (INIS)

    Mishra, S.P.; Sharma, R.B.

    1983-01-01

    Recoil reaction of 128 I atoms in neutron irradiated mixed crystals (iodate-nitrate) have been studied by thermal annealing methods. The retention of 128 I (i.e. radioactivity of 128 I retained in the parent chemi cal form) decreases sharply in the beginning and then attains saturation value with the increase in concentration of nitrate. The annealing followed the usual characteristic pattern, viz., a steep rise in retention within the first few minutes and then a saturation value thereafter but these saturation values in case of mixed crystals are lower in comparison to those of pure iodate targets. The process obeys simple first order kinetics and the activation energy obtained are of lower order than those obtained in case of pure targets. The results are discussed in the light of present ideas and the role of nitrate ion and its radiolytic products have also been invoked. (author)

  14. Effect of annealing on photoluminescence properties of neon implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Zhu, J J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Wang, Y T [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Lu, G J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W B [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, L Q [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, Z S [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhao, D G [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, S M [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Jiang, D S; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

    2008-01-21

    The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10{sup 14} to 9 x 10{sup 15} cm{sup -2} and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10{sup 15} cm{sup -2}. The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V{sub Ga}O{sub N} complexes caused by high energy ion implantation.

  15. Effect of annealing on photoluminescence properties of neon implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Zhu, J J; Wang, Y T; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Zhao, D G; Zhang, S M; Jiang, D S; Yang, H

    2008-01-01

    The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10 14 to 9 x 10 15 cm -2 and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10 15 cm -2 . The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V Ga O N complexes caused by high energy ion implantation

  16. Sintering and annealing effects on undoped yttria transparent ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Letue, Laetitia; Petit, Johan, E-mail: johan.petit@onera.fr; Ritti, Marie-Hélène; Lalanne, Sylvie; Landais, Stéphane

    2017-06-15

    Transparent yttrium oxide (Y{sub 2}O{sub 3}) ceramics were processed by several densifications steps without any doping species. The green bodies were obtained by the aqueous way and sintered at high temperature under vacuum and then under high pressure. We studied the effects of different sintering cycles and air annealing at different steps of the process on the density and the grain growth. We also focused on the reaction between yttria ceramics and BN-coated graphite crucible which occurs during HIP. We noted that a low heating rate and two annealing steps are necessary to improve our samples’ transparency. - Highlights: • The quality of transparent ceramics is compared with the tested process parameters. • Air annealing is critical when using a carbon environment in the process. • Intra-granular pores, and so the final transparency, are directly linked to the sintering heating rates.

  17. Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

    International Nuclear Information System (INIS)

    Babinski, Adam; Jasinski, J.; Bozek, R.; Szepielow, A.; Baranowski, J. M.

    2001-01-01

    The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 C). QDs cannot be distinguished after RTA at temperature 800 C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 C, the peak is due to the QDs. After RTA at 800 C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface

  18. The effects of Mg incorporation and annealing temperature on the ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

  19. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    Effects of nitrogen annealing on structural and magnetic properties of Co/Si (100) up to 700◦C has been studied in this ... are dictated by uniformity of interdiffusion parallel to inter- ..... AFM images confirmed increase in the nanocrystalline.

  20. Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

    International Nuclear Information System (INIS)

    Goh, K. E. J.; Augarten, Y.; Oberbeck, L.; Simmons, M. Y.

    2008-01-01

    We address the use of rapid thermal anneal (RTA) to enhance electron mobility and phase coherent transport in Si:P δ-doped devices encapsulated by low temperature Si molecular beam epitaxy while minimizing dopant diffusion. RTA temperatures of 500-700 deg. C were applied to δ-doped layers encapsulated at 250 deg. C. From 4.2 K magnetotransport measurements, we find that the improved crystal quality after RTA increases the mobility/mean free path by ∼40% and the phase coherence length by ∼25%. Our results suggest that the initial capping layer has near optimal crystal quality and transport improvement achieved by a RTA is limited

  1. Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung Nam; Kim, Seung Bin [Pohang University of Science and Technology, Pohang (Korea, Republic of); Choi, Hyun Chul [Chonnam National University, Gwangju (Korea, Republic of)

    2012-01-15

    In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn- O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm{sup -1}.

  2. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  3. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  4. Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

    International Nuclear Information System (INIS)

    Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

    2012-01-01

    In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

  5. The effect of thermal and vapor annealing treatments on the self-assembly of TiO2 /PS-b-PMMA nanocomposites generated via the sol-gel process

    International Nuclear Information System (INIS)

    Gutierrez, J; Tercjak, A; Garcia, I; Mondragon, I

    2009-01-01

    Polystyrene-block-poly(methyl methacrylate) (SMMA) block copolymer has been used as a structure-directing agent for generating TiO 2 /SMMA nanocomposites via the sol-gel process using a hydrophobic surfactant. The aim of the work has been focused on the preparation of well-defined nanostructured composites based on the self-assembling capability of the block copolymer using two different annealing methods: thermal- and solvent-induced microphase separation. The addition of different amounts of nanoparticles caused strong variations in the self-assembled morphology of the TiO 2 /SMMA nanocomposites with respect to the block copolymer, as observed by atomic force microscopy (AFM). To verify the confinement of the nanoparticles in the PMMA block 3D AFM images and corresponding AFM profiles have also been reported. UV light irradiation of the nanocomposite films provoked the removal of the organic matrix and consequently led to an array of TiO 2 nanoparticles on the substrate surface.

  6. Thermal annealing of carbon nanotubes reveals a toxicological impact of the structural defects

    Energy Technology Data Exchange (ETDEWEB)

    Figarol, Agathe, E-mail: figarol@emse.fr [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France); Pourchez, Jérémie, E-mail: pourchez@emse.fr [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Boudard, Delphine [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Forest, Valérie [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Berhanu, Sarah [Armines - Mines ParisTech, Centre des Matériaux, CNRS UMR 7633 (France); Tulliani, Jean-Marc [Politecnico di Torino, Department of Applied Science and Technology (Italy); Lecompte, Jean-Pierre [Centre Européen de la céramique CNRS: UMR 7315, SPCTS (France); Cottier, Michèle [Université Jean Monnet Saint-Etienne, EA 4624, SFR IFRESIS, LINA (France); Bernache-Assollant, Didier [Ecole Nationale Supérieure des Mines, CIS-EMSE, EA 4624, SFR IFRESIS, LINA (France); Grosseau, Philippe [Ecole Nationale Supérieure des Mines, SPIN-EMSE, CNRS: UMR 5307, LGF (France)

    2015-04-15

    The biological response to pristine and annealed multi-walled carbon nanotubes (MWCNT) was assessed on murine macrophages (RAW 264.7). First, the physicochemical features of the as-produced MWCNT and annealed at 2125 °C for 1 h were fully characterized. A decrease in structural defects, hydrophobicity and catalytic impurities was detected after annealing. Thereafter, their impact on cytotoxicity, oxidative stress, and pro-inflammatory response was investigated at concentrations ranging from 15 to 120 µg mL{sup −1}. No effect of the 2125 °C treatment was detected on the cytotoxicity. In contrast, the annealed carbon nanotubes showed a significant increase of the pro-inflammatory response. We assumed that this behavior was due to the reduction in structural defects that may modify the layer of adsorbed biomolecules. Surprisingly, the purification of metallic catalysts did not have any significant impact on the oxidative stress. We suggested that the structural improvements from the 2125 °C treatment can decrease the carbon nanotube scavenging capacity and thus allow a higher free radical release which may counterbalance the decrease of oxidative stress due to a lower content of metallic impurities.

  7. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    Science.gov (United States)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

    2015-02-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

  8. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

    2015-01-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

  9. Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

    Science.gov (United States)

    Kumar, Pushpendra; Huber, Patrick

    2016-04-01

    Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.

  10. Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

    International Nuclear Information System (INIS)

    Margapoti, Emanuela

    2010-01-01

    To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t A = 30 s at temperatures from T A = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L D ) and the activation energy (E A ) have been determined thereof. For the studied QDs, E A has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t A kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

  11. Optical properties of thermally annealed CdZnSe/ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Margapoti, Emanuela

    2010-07-01

    To analyse the diffusion characteristics, photoluminescence (PL) spectroscopy has been carried out in extensive detail on single, as well as, ensembles of thermally annealed (TA) CdSe/ZnSe QDs. For a series of QD-ensembles, each annealed for t{sub A} = 30 s at temperatures from T{sub A} = 300-550 C, the change in the QD-composition has been calculated from the blue-shift of the exciton ground-state PL-emission, using a concentration function based on Fick's laws of diffusion. The diffusion length (L{sub D}) and the activation energy (E{sub A}) have been determined thereof. For the studied QDs, E{sub A} has been evaluated to be 2.2 eV. Additionally, TA results also in an enhancement of the PL-intensity and reduction of the full-width-at-half maximum (FWHM) of the spectra. This point towards an increased homogeneity of the QD-size and composition, and decrease in the concentration of defects around the QDs. For single CdSe/ZnSe QDs, TA has been varied from 100-240 C, in steps for 20 C, with t{sub A} kept fixed at 30 s. Finally, the evolution of the magneto-optic response with post-growth thermal annealing has been studied for both individual QDs and QD-ensembles. An external magnetic field, applied perpendicular to the plane of the QDs (Faraday configuration), results in Zeeman spin splitting of the ground exciton state. The emissions from the Zeeman-split states are left and right circularly polarized and from the degree of circular polarization (DCP), as well as, the spectral separation of the PL-peaks, the g-factor can be estimated. For CdSe/ZnSe QD-ensembles, the g-factor has been observed to change sign with TA. (orig.).

  12. Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

    Science.gov (United States)

    Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

    2018-06-01

    Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

  13. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr [Faculty of Education, Hakkari Universty, 30000, Hakkari (Turkey); Gumus, Cebrail [Faculty of Science and Letters, Cukurova University, 01330, Adana (Turkey)

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  14. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

    International Nuclear Information System (INIS)

    Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

    2011-01-01

    We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

  15. Development of a rapid thermal annealing process for polycrystalline silicon thin-film solar cells on glass

    Energy Technology Data Exchange (ETDEWEB)

    Rau, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)], E-mail: bjoern.rau@helmholtz-berlin.de; Weber, T.; Gorka, B.; Dogan, P.; Fenske, F.; Lee, K.Y.; Gall, S.; Rech, B. [Helmholtz Centre Berlin for Materials and Energy, Kekulestr. 5, D-12489 Berlin (Germany)

    2009-03-15

    In this report, we discuss the influence of rapid thermal annealing (RTA) on the performance of polycrystalline Si (poly-Si) thin-film solar cells on glass where the poly-Si layers are differently prepared. The first part presents a comprehensive study of RTA treatments on poly-Si thin-films made by solid phase crystallization (SPC) (standard material of CSG Solar AG, Thalheim). By varying both plateau temperature (up to 1050 deg. C) and duration (up to 1000 s) of the annealing profile, we determined the parameters for a maximum open-circuit voltage (V{sub OC}). In addition, we applied our standard plasma hydrogenation treatment in order to passivate the remaining intra-grain defects and grain boundaries by atomic hydrogen resulting in a further increase of V{sub OC}. We found, that the preceding RTA treatment increases the effect of hydrogenation already at comparable low RTA temperatures. The effect on hydrogenation increases significantly with RTA temperature. In a second step we investigated the effect of the RTA and hydrogenation on large-grained poly-Si films based on the epitaxial thickening of poly-Si seed layers.

  16. Effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy

    International Nuclear Information System (INIS)

    Kim, T. K.; Choi, B. S.; Baek, J. H.; Choi, B. K.; Jeong, Y. H.; Lee, D. J.; Jang, M. H.; Jeong, Y. H.

    2002-01-01

    In order to determine the annealing condition after cold rolling, the effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy were evaluated. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. The results of hardness test also revealed that the hardness was independent of the annealing, However, the results of corrosion test in an ammoniated water of pH 9.98 at 360 .deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 120 days also increased with the annealing temperature. It may be attributed to the growth of α' precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  17. The effect of annealing ambient on surface segregation in indium implanted sapphire

    International Nuclear Information System (INIS)

    Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

    1991-01-01

    A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

  18. The effects of annealing temperature on the permittivity and electromagnetic attenuation performance of reduced graphene oxide

    Science.gov (United States)

    Wu, Fan; Zeng, Qiao; Xia, Yilu; Sun, Mengxiao; Xie, Aming

    2018-05-01

    Reduced graphene oxide (RGO) has been prepared through the thermal reduction method with different annealing temperatures to explore the effects of temperature on the permittivity and electromagnetic attenuation performance. The real and imaginary parts of permittivity increase along with the decrease in the oxygen functional group and the increase in the filler loading ratio. A composite only loaded with 1 wt. % of RGO can possess an effective electromagnetic absorption bandwidth of 7.60 GHz, when graphene oxide was reduced under 300 °C for 2 h. With the annealing temperature increased to 700 °C and the well reduced RGO loaded 7 wt. % in the composite, the electromagnetic interference shielding efficiency can get higher than 35 dB from 2 to 18 GHz. This study shows that controlling the oxygen functional groups on the RGO surface can also obtain an ideal electromagnetic attenuation performance without any other decorated nanomaterials.

  19. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Science.gov (United States)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  20. Effect of annealing on parameters of synthetic opal

    International Nuclear Information System (INIS)

    Gajiev, G M; Kurdyukov, D A; Travnikov, V V

    2006-01-01

    We report on the effect of high temperature annealing on the reflection spectra of synthetic opals. The analysis of conditions for simultaneous diffraction on the (111) planes parallel and inclined to the sample surface has shown that both annealed and unannealed opals are compressed along the growth [111] axis and the shape of the SiO 2 balls forming the opals' close packed structure can be described as spheroidal. The structure parameters were evaluated from the analysis of the angular dependences of the peak positions in the Bragg reflection spectra of unfilled and glycerol-filled samples. The major effect of annealing is due to the sintering (interpenetration) of the structural elements of opals. The maximum temperature of 1050 deg. C leads to a 10-fold increase in the degree of spheroid sintering. As a result, the interspheroid spacing decreases by over 10%, while the filling factor increases from 0.75 to 0.96 together with the effective dielectric constant of the opal as a whole (from 1.74 to 2.08). Sintering takes place not only between spheroids, but also inside spheroids between the α-SiO 2 nanoparticles constituting them. This results in a noticeable (by ∼7%) increase in the dielectric constant of opal spheroids

  1. Effects of hydroxyl-functionalization and sub-Tg thermal annealing on high pressure pure- and mixed-gas CO2/CH4 separation by polyimide membranes based on 6FDA and triptycene-containing dianhydrides

    KAUST Repository

    Swaidan, Raja

    2015-02-01

    A sub-Tg thermally-annealed (250°C, 24h) ultra-microporous PIM-polyimide bearing a 9,10-diisopropyl-triptycene contortion center and hydroxyl-functionalized diamine (2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, APAF) exhibited plasticization resistance up to 50bar for a 1:1 CO2/CH4 feed mixture, with a 9-fold higher CO2 permeability (30Barrer) and 2-fold increase in CO2/CH4 permselectivity (~50) over conventional dense cellulose acetate membranes at 10bar CO2 partial pressure. Interestingly, mixed-gas CO2/CH4 permselectivities were 10-20% higher than those evaluated under pure-gas conditions due to reduction of mixed-gas CH4 permeability by co-permeation of CO2. Gas transport, physisorption and fluorescence studies indicated a sieving pore-structure engaged in inter-chain charge transfer complexes (CTCs), similar to that of low-free-volume 6FDA-APAF polyimide. The isosteric heat of adsorption of CO2 as well as CO2/CH4 solubility selectivities varied negligibly upon replacement of OH with CH3 but CTC formation was hindered, CO2 sorption increased, CO2 permeability increased ~3-fold, CO2/CH4 permselectivity dropped to ~30 and CH4 mixed-gas co-permeation increased. These results suggest that hydroxyl-functionalization did not cause preferential polymer-gas interactions but primarily elicited diffusion-dominated changes owing to a tightened microstructure more resistant to CO2-induced dilations. Solution-processable hydroxyl-functionalized PIM-type polyimides provide a new platform of advanced materials that unites the high selectivities of low-free-volume polymers with the high permeabilities of PIM-type materials particularly for natural gas sweetening applications.

  2. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  3. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    International Nuclear Information System (INIS)

    Burke, M.G.; Freyer, P.D.; Mager, T.R.

    1993-01-01

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ''precipitation-type'' and a ''damage-type'' component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs

  4. Irradiation embrittlement of reactor pressure vessel steels: Considerations for thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Burke, M G; Freyer, P D; Mager, T R

    1994-12-31

    In this paper, an overview of the irradiation embrittlement phenomenon is presented from a structure-properties viewpoint. Effects of irradiation conditions on embrittlement are first reviewed: irradiation temperature, fluence, flux, and steel or alloy composition. Then, the techniques for identifying/characterizing the irradiation-induced microstructural features are described: TEM/STEM (electron microscopy), small angle neutron scattering, atom probe field-ion microscopy, positron annihilation lifetime spectroscopy. Mechanisms of hardening and embrittlement generally consist of a ``precipitation-type`` and a ``damage-type`` component and the potential of annealing treatments for restoring the most of the original pressure vessel material toughness is examined; its conditions and mechanisms involved are discussed. Feasibility and economic evaluation of annealing costs is also carried out. 90 refs., 4 figs.

  5. Investigation of Near-Surface Defects Induced by Spike Rapid Thermal Annealing in c-SILICON Solar Cells

    Science.gov (United States)

    Liu, Guodong; Ren, Pan; Zhang, Dayong; Wang, Weiping; Li, Jianfeng

    2016-01-01

    The defects induced by a spike rapid thermal annealing (RTA) process in crystalline silicon (c-Si) solar cells were investigated by the photoluminescence (PL) technique and the transmission electron microscopy (TEM), respectively. Dislocation defects were found to form in the near-surface junction region of the monocrystalline Si solar cell after a spike RTA process was performed at 1100∘C. Photo J-V characteristics were measured on the Si solar cell before and after the spike RTA treatments to reveal the effects of defects on the Si cell performances. In addition, the Silvaco device simulation program was used to study the effects of defects density on the cell performances by fitting the experimental data of RTA-treated cells. The results demonstrate that there was an obvious degradation in the Si solar cell performances when the defect density after the spike RTA treatment was above 1×1013cm-3.

  6. The effect of annealing temperature on the optical properties of a ruthenium complex thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

    2016-08-01

    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

  7. Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 1. Program overview. Final report

    International Nuclear Information System (INIS)

    Mager, T.R.

    1983-01-01

    An EPRI sponsored program was carried out by Westinghouse to determine the extent of fracture toughness recovery as a function of annealing time and temperature for neutron embrittlement sensitive reactor vessel material and to develop an optimal thermal anneal procedure for field applications. Program materials were three weldments fabricated by Combustion Engineering, Inc., from the same heat of A533 Grade B Class 1 plate material and the same heat of MnMoNi weld wire. The only variables were the target copper level and the welding flux which was Linde Grade 80 and Linde 0091. Weldments of 0.22, 0.36, and 0.41 wt % copper were produced. It was concluded from this study that excellent recovery of all properties could be achieved by annealing at 850 0 F (454 0 C) and above for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the rate which would have been expected had no anneal been performed. System limitations were identified for both wet and dry annealing methods

  8. Enhanced light emission efficiency and current stability by morphology control and thermal annealing of organic light emitting diode devices

    Energy Technology Data Exchange (ETDEWEB)

    Caria, S [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Como, E Da [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Murgia, M [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Zamboni, R [Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Via P Gobetti 101, 40129 Bologna (Italy); Melpignano, P [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy); Biondo, V [Centro Ricerche Plast-Optica (CRP), via Jacopo Linussio 1, 33020 Amaro (UD) (Italy)

    2006-08-23

    The electro-optical behaviour of organic light emitting diode devices (OLEDs) is greatly influenced by the morphology of the films. A major parameter is due to the important role that the morphology of the active organic thin films plays in the phenomena that lead to light emission. For vacuum-grown OLEDs, the morphology of the specific thin films can be varied by modification of the deposition conditions. We have assessed the method (ultrahigh-vacuum organic molecular beam deposition) and conditions (variation of the deposition rate) for electro-emission (EL) optimization in a standard {alpha}-NPB (N,N'-bis-(1-naphthyl)-N,N' diphenyl-1,1' biphenyl-4-4' diamine)/Alq3 (tris-(8-hydroxyquinoline) aluminium) vacuum-grown OLED device. The best EL performances have been obtained for OLEDs made in ultrahigh vacuum with the Alq3 layer deposited with a differential deposition rate ranging from 1.0 to 0.3Angsts{sup -1}. The results are consistent with a model of different Alq3 morphologies, allowing efficient charge injection at the metal/organic interface, and of the minimization of grain boundaries at the electron-hole recombination interface, allowing efficient radiative excitonic decay. At the same time, with the objective of controlling and stabilizing the morphology changes and stabilizing the charge transport over a long OLED operating time, we have studied the effect of thermal annealing processing in the standard current behaviour of OLEDs. The large current fluctuations typically observed for standard vacuum-grown OLEDs have been smeared out and kept constant over a long operating time by the given thermal annealing conditions. The results are interpreted in terms of the stabilization of intrinsic polymorphism of the organic film's structure induced by thermal energy and leading the morphology to a lowest-energetic configuration.

  9. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  10. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  11. Impact of Thermal Annealing on Organic Photovoltaic Cells Using Regioisomeric Donor-Acceptor-Acceptor Molecules.

    Science.gov (United States)

    Zhang, Tao; Han, Han; Zou, Yunlong; Lee, Ying-Chi; Oshima, Hiroya; Wong, Ken-Tsung; Holmes, Russell J

    2017-08-02

    We report a promising set of donor-acceptor-acceptor (D-A-A) electron-donor materials based on coplanar thieno[3,2-b]/[2,3-b]indole, benzo[c][1,2,5]thiadiazole, and dicyanovinylene, which are found to show broadband absorption with high extinction coefficients. The role of the regioisomeric electron-donating thienoindole moiety on the physical and structural properties is examined. Bulk heterojunction (BHJ) organic photovoltaic cells (OPVs) based on the thieno[2,3-b]indole-based electron donor NTU-2, using C 70 as an electron acceptor, show a champion power conversion efficiency of 5.2% under AM 1.5G solar simulated illumination. This efficiency is limited by a low fill factor (FF), as has previously been the case in D-A-A systems. In order to identify the origin of the limited FF, further insight into donor layer charge-transport behavior is realized by examining planar heterojunction OPVs, with emphasis on the evolution of film morphology with thermal annealing. Compared to as-deposited OPVs that exhibit insufficient donor crystallinity, crystalline OPVs based on annealed thin films show an increase in the short-circuit current density, FF, and power conversion efficiency. These results suggest that that the crystallization of D-A-A molecules might not be realized spontaneously at room temperature and that further processing is needed to realize efficient charge transport in these materials.

  12. Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices.

    Science.gov (United States)

    Cheng, Zengguang; Zhou, Qiaoyu; Wang, Chenxuan; Li, Qiang; Wang, Chen; Fang, Ying

    2011-02-09

    By combining atomic force microscopy and trans-port measurements, we systematically investigated effects of thermal annealing on surface morphologies and electrical properties of single-layer graphene devices fabricated by electron beam lithography on silicon oxide (SiO(2)) substrates. Thermal treatment above 300 °C in vacuum was required to effectively remove resist residues on graphene surfaces. However, annealing at high temperature was found to concomitantly bring graphene in close contact with SiO(2) substrates and induce increased coupling between them, which leads to heavy hole doping and severe degradation of mobilities in graphene devices. To address this problem, a wet-chemical approach employing chloroform was developed in our study, which was shown to enable both intrinsic surfaces and enhanced electrical properties of graphene devices. Upon the recovery of intrinsic surfaces of graphene, the adsorption and assisted fibrillation of amyloid β-peptide (Aβ1-42) on graphene were electrically measured in real time.

  13. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

    Science.gov (United States)

    Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

    2018-03-01

    Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

  14. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

    2015-11-15

    Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  15. Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

    Science.gov (United States)

    Sun, Yijun; Cheng, Zhiyuan; Zhou, Qiang; Sun, Ying; Sun, Jiabao; Liu, Yanhua; Wang, Meifang; Cao, Zhen; Ye, Zhi; Xu, Mingsheng; Ding, Yong; Chen, Peng; Heuken, Michael; Egawa, Takashi

    2018-02-01

    The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

  16. Carbon nanotubes growing on rapid thermal annealed Ni and their application to a triode-type field emission device

    International Nuclear Information System (INIS)

    Uh, Hyung Soo; Park, Sang Sik

    2006-01-01

    In this paper, we demonstrate a new triode-type field emitter arrays using carbon nanotubes (CNTs) as an electron emitter source. In the proposed structure, the gate electrode is located underneath the cathode electrode and the extractor electrode is surrounded by CNT emitters. CNTs were selectively grown on the patterned Ni catalyst layer by using plasma-enhanced chemical vapor deposition (PECVD). Vertically aligned CNTs were grown with gas mixture of acetylene and ammonia under external DC bias. Compared with a conventional under-gate structure, the proposed structure reduced the turn-on voltage by about 30%. In addition, with a view to controlling the density of CNTs, Ni catalyst thickness was varied and rapid thermal annealing (RTA) treatment was optionally adopted before CNT growth. With controlled Ni thickness and RTA condition, field emission efficiency was greatly improved by reducing the density of CNTs, which is due to the reduction of the electric field screening effect caused by dense CNTs

  17. Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

    2013-12-01

    The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

  18. Activated Carbon Fibers "Thickly Overgrown" by Ag Nanohair Through Self-Assembly and Rapid Thermal Annealing

    Science.gov (United States)

    Yan, Xuefeng; Xu, Sijun; Wang, Qiang; Fan, Xuerong

    2017-11-01

    Anisotropic nanomaterial-modified carbon fibers attract increasing attention because of their superior properties over traditional ones. In this study, activated carbon fibers (ACFs) "thickly overgrown" by Ag nanohair were prepared through self-assembly and rapid thermal annealing. Viscose fibers with well-dispersed silver nanoparticles (AgNPs) on surfaces were first prepared through self-assembly of hyperbranched poly(amino-amine) (HBPAA)-capped AgNPs on viscose surfaces. HBPAA endowed the AgNP surfaces with negative charges and abundant amino groups, allowing AgNPs to monodispersively self-assemble to fiber surfaces. Ag nanohair-grown ACFs were prepared by sequential pre-oxidation and carbonization. Because the carbonization furnace was open-ended, ACFs are immediately transferrable to the outside of the furnace. Therefore, the Ag liquid adsorbed by ACF pores squeezed out to form Ag nanowires through thermal contraction. FESEM characterization indicated that Ag nanohairs stood on ACF surface and grew from ACF caps. XPS and XRD characterization showed that Ag successfully assembled to fiber surfaces and retained its metallic state even after high-temperature carbonization. TG analysis suggested that Ag nanohair-grown ACFs maintained their excellent thermal stabilities. Finally, the fabricated ACFs showed excellent and durable antibacterial activities, and the developed method may provide a potential strategy for preparing metal nanowire-grown ACFs.

  19. Studies of thermal annealing and dope composition on the enhancement of separation performance cellulose acetate membrane for brackish water treatment from Jepara

    Directory of Open Access Journals (Sweden)

    Tutuk Djoko Kusworo

    2014-08-01

    Full Text Available Membrane is an alternative technology of water treatment with filtration principle that is being widely developed and used for water treatment. The main objective of this study was to make an asymmetric membrane using cellulose acetate polymer and study the effect of additive and annealing treatment on the morphology structure and performance of cellulose acetate membranes in brackish water treatment. Asymmetric membranes for brackish water treatment were casted using a casting machine process from dope solutions containing cellulose acetates and acetone as a solvent. Membranes was prepared by phase inversion method  with variation of polyethylene glycol (PEG concentration of 1 and 5 wt% and with thermal annealing at 60 oC in 10 seconds and without thermal annealing behavior. Membrane characterization consists of calculation of membrane flux and rejection with brackish water as a feed from Jepara. The research concluded that asymmetric cellulose acetate membrane can be made by dry/wet phase inversion method. The more added concentration of PEG will be resulted the larger pore of membrane. Meanwhile the higher temperature and the longer time of annealing treatment, the skin layer of membrane become denser. Membrane with the composition of 18 wt% cellulose acetate, 5 wt% PEG, 1 wt% distilled water, with heat treatment at temperature of 60 oC for 10 seconds is obtained optimal performance.

  20. Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

    International Nuclear Information System (INIS)

    Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

    1997-01-01

    Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

  1. Irradiation, Annealing, and Reirradiation Effects on American and Russian Reactor Pressure Vessel Steels

    International Nuclear Information System (INIS)

    Chernobaeva, A.A.; Korolev, Y.N.; Nanstad, R.K.; Nikolaev, Y.A.; Sokolov, M.A.

    1998-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. Even though a postirradiation anneal may be deemed successful, a critical aspect of continued RPV operation is the rate of embrittlement upon reirradiation. There are insufficient data available to allow for verification of available models of reirradiation embrittlement or for the development of a reliable predictive methodology. This is especially true in the case of fracture toughness data. Under the U.S.-Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS), Working Group 3 on Radiation Embrittlement, Structural Integrity, and Life Extension of Reactor Vessels and Supports agreed to conduct a comparative study of annealing and reirradiation effects on RPV steels. The Working Group agreed that each side would irradiate, anneal, reirradiate (if feasible ), and test two materials of the other. Charpy V-notch (CVN) and tensile specimens were included. Oak Ridge National Laboratory (ORNL) conducted such a program (irradiation and annealing, including static fracture toughness) with two weld metals representative of VVER-440 and VVER-1000 RPVs, while the Russian Research Center-Kurchatov Institute (RRC-KI) conducted a program (irradiation, annealing, reirradiation, and reannealing) with Heavy-Section Steel Technology (HSST) Program Plate 02 and Heavy-Section Steel Irradiation (HSSI) Program Weld 73W. The results for each material from each laboratory are compared with those from the other laboratory. The ORNL experiments with the VVER welds included irradiation to about 1 x 10 19 n/cm 2 (>1 MeV), while the RRC-KI experiments with the U.S. materials included irradiations from about 2 to 18 x 10 19 n/cm 2 (>l MeV). In both cases, irradiations were conducted at ∼290 C and annealing treatments were conducted at ∼454 C. The ORNL and RRC

  2. Effects of annealing time on the recovery of Charpy V-notch properties of irradiated high-copper weld metal

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1994-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. An important issue to be resolved is the effect on the toughness properties of reirradiating a vessel that has been annealed. This paper describes the annealing response of irradiated high-copper submerged-arc weld HSSI 73W. For this study, the weld has been annealed at 454 C (850 F) for lengths of time varying between 1 and 14 days. The Charpy V-notch 41-J (30-ft-lb) transition temperature (TT 41J ) almost fully recovered for the longest period studied, but recovered to a lesser degree for the shorter periods. No significant recovery of the TT 41J was observed for a 7-day anneal at 343 C (650 F). At 454 C for the durations studied, the values of the upper-shelf impact energy of irradiated and annealed weld metal exceeded the values in the unirradiated condition. Similar behavior was observed after aging the unirradiated weld metal at 460 and 490 C for 1 week

  3. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  4. Effect of hydration on the annealing of chemical radiation damage in gamma-irradiated strontium bromate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; Sahish, T.S.

    1991-01-01

    Rehydration of γ-irradiated anhydrous strontium bromate induces direct recovery of damage. The recovery process is unimolecular and the rehydrated salt is susceptible to thermal annealing. (author) 11 refs.; 2 figs

  5. Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

    International Nuclear Information System (INIS)

    He, H.Y.; Huang, J.F.; Cao, L.Y.; Wang, L.S.

    2006-01-01

    Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (200) /I (117) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 deg. C followed by rapid thermal annealing for 3, 10 and 20 min at 700 deg. C, respectively (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 deg. C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 0.719 were obtained by preheating the film from room temperature at 20 deg. C/min followed by annealing for 10 min at 700 deg. C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 deg. C for 10 min followed by rapid thermal annealing for 3 min at 700 deg. C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 deg. C without preannealing resulted in columnar crystallite perpendicular to substrate surface

  6. Annealing effects of Ga2O3-ZnO core-shell heteronanowires

    International Nuclear Information System (INIS)

    Kim, Hyoun Woo; Lee, Jong Woo; Kebede, Mesfin Abayneh; Kim, Hyo Sung; Lee, Chongmu

    2009-01-01

    We prepared ZnO-coated Ga 2 O 3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800 deg. C, defect-associated PL peaks (2.2 and 2.6 eV) have been intensified with respect to the UV peak, and a new 2.8 eV-peak has been generated. Possible emission mechanisms are also discussed.

  7. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  8. Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

    Science.gov (United States)

    Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

    2017-08-09

    High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

  9. Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

    2015-01-01

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

  10. Characterization of damaging in apatitic materials irradiated with heavy ions and thermally annealed

    International Nuclear Information System (INIS)

    Tisserand, R.

    2004-12-01

    Some minerals belonging to the family of apatite are seen to be potential candidates for use as conditioning matrices or transmutation targets for high level nuclear waste management. Indeed, studies of natural nuclear reactors (Oklo) highlighted the strong ability of these minerals to anneal irradiation damage. In order to determine the global behaviour of these materials, we performed a fundamental study on the evolution of irradiation damage induced by various heavy ions in two apatites: a natural phospho-calcic fluor-apatite from Durango and a synthetic sintered mono-silicated fluor-apatite, called britholite. The damage in these materials was measured by using channelling R.B.S. and X-ray diffraction respectively and by determining an amorphization effective radius Re. The results revealed a similar behaviour for both apatites according to the electronic energy deposit at the entrance of the material. In addition, the effect of an isothermal annealing at 300 C was quantified on a mono-silicated britholite previously irradiated with Kr ions. We highlighted in this case the return of the lattice parameters to their initial values, followed by a partial and slow rebuilding of the crystalline lattice versus the annealing time. Finally, we followed the changes in the morphology of etch pits in the Durango fluor-apatite after acid dissolution as a function of the energy deposit by the ions. We showed that the influence of crystallography leads quickly to opening angles close to 30 degrees. The calculation of etching velocities within the irradiated material highlighted that there is a range of deposit energy where the velocity ratio increases strongly before becoming constant. (author)

  11. PLEPS study of thermal annealing influence on binary Fe-11.62 % Cr alloys

    International Nuclear Information System (INIS)

    Sojak, S.; Slugen, V.; Petriska, V.; Stancek, S.; Vitazek, K.; Stacho, M.; Veternikova, J.; Sabelova, V.; Krsjak, V.; Egger, W.; Ravelli, L.; Skarba, M.; Priputen, P.

    2012-01-01

    Lifetime of structural materials is one of the crucial factors for operation of nuclear power plants (NPP). Therefore, high expectations and requirements are put on these materials from the radiation, heat and mechanical resistance point of view. Even higher stresses are expected in new generations of nuclear power plants, such as Generation IV and fusion reactors. Therefore, investigation of new structural materials is among others focused on study of reduced activation ferritic/martensitic (RAFM) steels with good characteristics as lower activation, good resistance to volume swelling, good radiation, and heat resistance (up to 550 grad C). Our research is focused on study of radiation damage simulated by ion implantations and thermal treatment evaluation of RAFM steels in form of binary Fe-Cr model alloys. Due to the defect production by ions, there was applied an approach for restoration of initial physical and mechanical characteristics of structural materials in the form of thermal annealing, with goal to decrease size and amount of accumulated defects. Experimental analysis of material damage at microstructural level was performed by Pulsed Low Energy Positron System (PLEPS) at the high intensity positron source NEPOMUC at the Munich research reactor FRM-II. (authors)

  12. Interface reactions between Pd thin films and SiC by thermal annealing and SHI irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Njoroge, E.G., E-mail: eric.njoroge@up.ac.za [Department of Physics, University of Pretoria, Pretoria (South Africa); Theron, C.C. [Department of Physics, University of Pretoria, Pretoria (South Africa); Skuratov, V.A. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Wamwangi, D. [School of Physics, University of Witwatersrand, Johannesburg (South Africa); Hlatshwayo, T.T. [Department of Physics, University of Pretoria, Pretoria (South Africa); Comrie, C.M. [MRD, iThemba LABS, P.O. Box 722, Somerset West 7129 (South Africa); Malherbe, J.B. [Department of Physics, University of Pretoria, Pretoria (South Africa)

    2016-03-15

    The solid-state reactions between Pd thin films and 6H-SiC substrates induced by thermal annealing, room temperature swift heavy ion (SHI) irradiation and high temperature SHI irradiation have been investigated by in situ and real-time Rutherford backscattering spectrometry (RBS) and Grazing incidence X-ray diffraction (GIXRD). At room temperature, no silicides were detected to have formed in the Pd/SiC samples. Two reaction growth zones were observed in the samples annealed in situ and analysed by real time RBS. The initial reaction growth region led to formation of Pd{sub 3}Si or (Pd{sub 2}Si + Pd{sub 4}Si) as the initial phase(s) to form at a temperature of about 450 °C. Thereafter, the reaction zone did not change until a temperature of 640 °C was attained where Pd{sub 2}Si was observed to form in the reaction zone. Kinetic analysis of the initial reaction indicates very fast reaction rates of about 1.55 × 10{sup 15} at cm{sup −2}/s and the Pd silicide formed grew linear with time. SHI irradiation of the Pd/SiC samples was performed by 167 MeV Xe{sup 26+} ions at room temperature at high fluences of 1.07 × 10{sup 14} and 4 × 10{sup 14} ions/cm{sup 2} and at 400 °C at lower fluences of 5 × 10{sup 13} ions/cm{sup 2}. The Pd/SiC interface was analysed by RBS and no SHI induced diffusion was observed for room temperature irradiations. The sample irradiated at 400 °C, SHI induced diffusion was observed to occur accompanied with the formation of Pd{sub 4}Si, Pd{sub 9}Si{sub 2} and Pd{sub 5}Si phases which were identified by GIXRD analysis.

  13. Annealing effects in solid-state track recorders

    International Nuclear Information System (INIS)

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-01-01

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

  14. In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Ambrosini, S.; Wagner, Jakob Birkedal; Booth, Tim

    2011-01-01

    Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stacking...... faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment....

  15. The effect of humidity on annealing of polymer optical fibre bragg gratings

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Nielsen, Kristian; Bang, Ole

    2015-01-01

    The effect of humidity on annealing of PMMA based microstructured polymer optical fiber (mPOF) Bragg gratings is studied. Polymer optical fibers (POFs) are annealed in order to release stress formed during the fabrication process. Un-annealed fibers will have high hysteresis and low sensitivity...... to humidity, particularly when operated at high temperature. Typically annealing of PMMA POFs is done at 80oC in an oven with no humidity control and therefor at low humidity. The response to humidity of PMMA FBGs annealed at different levels of humidity at the same temperature has also been studied. PMMA...

  16. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  17. Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

    International Nuclear Information System (INIS)

    Liang, J.H.; Sang, Y.J.; Wang, C.-H.; Wang, T.W.; Hsu, J.Y.; Niu, H.; Tseng, M.S.

    2005-01-01

    This study examines the post-annealing-dependent behaviors of the shallow junction produced by implanting 10 15 cm -2 20 keV BGe ions into n-type silicon specimens. Post-annealing treatments consisted of one- and two-step annealing including both furnace annealing (FA) and rapid thermal annealing (RTA). Comparison of the one-step FA at 550 deg. C and the one-step RTA at 1050 deg. C revealed that boron depth profiles were slightly diffused in the former but exhibited considerable transient-enhanced diffusion (TED) in the latter. However, both the one-step FA- and RTA-annealed germanium depth profiles barely diffused, while the latter diffusing slightly deeper than the former. The optimum value of junction depth (x j ) times sheet resistance (R s ) was obtained with one-step FA at 550 deg. C for 1 h. The two-step annealing (FA at 550 deg. C and RTA at 1050 deg. C) results showed that the RTA-induced TED in the boron depth profiles could be effectively retarded only when FA took place for more than 3 h. Again, germanium depth profiles are also barely diffused while the corresponding TEDs were larger than those in one-step FA but smaller than those in one-step RTA. Furthermore, the two-step annealing of FA at 550 deg. C for 3 h followed by RTA at 1050 deg. C for 30 s is suggested when attempting to obtain an optimum value of x j R s

  18. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  19. Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

    2014-10-15

    TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

  20. Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

  1. The precipitation in annealing and its effect on permittivity of Fe–Si–Al powders

    International Nuclear Information System (INIS)

    Li, Gang; Cui, Yin; Zhang, Nan; Wang, Xin; Xie, Jian Liang

    2016-01-01

    SEM images show that some precipitates distributed on the surface of as-annealed Fe–Si–Al powders. Subsequent experimental results indicate that both morphology and microstructure of as-annealed Fe–Si–Al powders change with increasing annealing temperature. Meanwhile, dielectric properties analysis suggesting that both real part ε′ and imaginary part ε″ of the Fe–Si–Al powders decrease significantly after annealed at 450 °C or higher temperature. We assume that it’s the precipitates with low electrical conductivity developed on the surface of powders that increase the surface resistivity of as-annealed powders and leading to a lower imagine part of permittivity. The drop of real part ε′ ascribed to the weakened interfacial polarization which resulted from the decrease of structural defects such as grain boundaries and interfaces during annealing process. - Highlights: • As-milled Fe–Si–Al powders were annealed at various temperature. • The change of morphology and microstructure of as-annealed Fe–Si–Al was examined. • Complex permittivity decrease significantly after annealed over 400 °C and permeability increase as annealing temperature rises. • The precipitation process in annealing and its effect on permittivity were analyzed.

  2. Annealing effect on the microstructure and magnetic properties of 14%Cr-ODS ferritic steel

    International Nuclear Information System (INIS)

    Ding, H.L.; Gao, R.; Zhang, T.; Wang, X.P.; Fang, Q.F.; Liu, C.S.

    2015-01-01

    Graphical abstract: TEM images of microstructure for 14%Cr-ODS ferritic steel annealed for 2 h at different temperatures: (a) 600 °C, (b) 800 °C, (c) 950 °C, and (d) 1150 °C, and the evolution trends of coercivity field (H_C) and Vickers microhardness for samples annealed at above temperatures for 2 h and 50 h. - Highlights: • The thermal stability of annealed 14%Cr-ODS ferritic steel was investigated. • The particle size keeps fairly constant with increasing annealing temperature. • The grain size is still 2–4 μm even after annealing for 50 h at 1150 °C. • The hardness and H_C are almost unchanged after annealing from 800 °C to 1150 °C. - Abstract: The microstructure and magnetic properties of the 14%Cr oxide dispersion strengthened (ODS) ferritic steel fabricated by sol–gel and HIP method were investigated by annealing in vacuum for 2 h (at 300, 600, 800, 950 and 1150 °C) and 50 h (at 600, 800, 950 and 1150 °C). Microstructure analysis shows that as the annealing temperature increases, the size of oxide nanoparticles becomes smaller and their dispersion in matrix becomes more homogeneous. Grain size remains stable when the annealing temperature is below 800 °C, while above 800 °C, grain size grows with the increasing annealing temperature and time. The Vickers microhardness and coercivity (H_C) display almost similar evolution trend with annealing temperature for 2 h and 50 h. No obvious recrystallization appears after 1150 °C annealing, which indicates the high microstructural stability of 14%Cr-ODS ferritic steel. The possible mechanism for above behaviors is discussed in this paper.

  3. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    CERN Document Server

    Rhee, J Y

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

  4. Thermal annealing behavior of niobium-implanted {alpha}-Al{sub 2}O{sub 3} under reducing environment

    Energy Technology Data Exchange (ETDEWEB)

    Jianer, Zeng; Naramoto, Hiroshi; Aoki, Yasushi; Yamamoto, Shunya; Mingle, Gan; Takeshita, Hidefumi [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Thermal annealing behavior is studied in {alpha}-Al{sub 2}O{sub 3} implanted with {sup 93}Nb{sup +} using RBS/channeling technique and optical absorption spectrometry. The samples with <0001> and <112-bar0> orientations are implanted with 300 keV and 400 keV {sup 93}Nb{sup +} ions. Thermal annealing under reducing environment (Ar+3%H{sub 2}) is employed in the temperature range from 600 to 1000degC to explore unusual materials phase. The annealing up to 1000degC for an hour does not show any essential change in RBS/channeling spectra in two kinds of samples but the significant decrease in the visible region is observed in optical absorption spectra. After annealing at 1000degC for 10 hours, the recovery of the lattice damage is detected by RBS/channeling analysis especially in (112-bar0) sample. In the optical absorption spectra, new absorption envelope appears in the ultraviolet region. The results are related to the formation of niobium metal fine particles, and the sharp distribution is realized especially in (0001) sample. (author)

  5. Ion-beam mixing and thermal annealing of Al--Nb and Al--Ta thin films

    International Nuclear Information System (INIS)

    Rai, A.K.; Bhattacharya, R.S.; Mendiratta, M.G.; Subramanian, P.R.; Dimiduk, D.M.

    1988-01-01

    Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattering. The individual layer thicknesses were adjusted to obtain the overall compositions as Al 3 Nb and Al 3 Ta. The films were ion mixed with 1 MeV Au + ions at a dose of 1 x 10 16 ions cm/sup -2/ . Uniform mixing and amorphization were achieved for both Al--Nb and Al--Ta systems. Equilibrium crystalline Al 3 Nb and Al 3 Ta phases were formed after annealing of ion mixed amorphous films at 400 0 C for 6 h. Unmixed films, however, remained unreacted at 400 0 C for 1 h. Partial reaction was observed in the unmixed film of Al--Nb at 400 0 C for 6 h. After annealing at 500 0 C for 1 h, a complete reaction and formation of Al 3 Nb and Al 3 Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed

  6. The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

    International Nuclear Information System (INIS)

    Pagonis, Vasilis

    1998-01-01

    Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

  7. Rapid phase segregation of P3HT:PCBM composites by thermal annealing for high-performance bulk-heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Fan, X.; Fang, G.J.; Qin, P.L.; Cheng, F.; Zhao, X.Z. [Wuhan University, Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan (China)

    2011-12-15

    The performances of bulk-heterojunction (BHJ) solar cells are investigated for time-dependent thermal annealing with different morphology evolution scales, having special consideration for the diffusion and aggregation of fullerene derivative molecules based on blends of poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM). Meaningfully, rapid formation of dot-like and needle-like crystalline PCBM structures of a few micrometers up to 60 {mu}m in size is obtained with thermal annealing treatment from 2 to 15 min, which dynamically reflects a fast process of PCBM molecule and cluster aggregation. Upon ultrasonic-assisted processing and annealing treatment, the scale of P3HT crystals is drastically increased in view of X-ray diffraction (XRD) patterns, leading to a high hole mobility. And, the P3HT domains can be gradually converted into larger P3HT crystals approved by the decreased full width at half-maximum in the XRD patterns. Corresponding current-voltage curves are measured in quantity and we propose a model to explain the effect of the crystalline degree of P3HT domains and aggregation of PCBM molecules and clusters on the phase segregation, expressing a viewpoint towards high performance of BHJ solar cells. (orig.)

  8. Implantation and annealing effects in molecular organic films

    CERN Document Server

    Pakhomov, G L; Shashkin, V I; Tura, J M; Ribo, J M; Ottaviano, L

    2002-01-01

    Ion implantation and annealing effects on the surface of phthalocyanine thin films have been studied by means of atomic force microscopy and electron spectroscopy for chemical analysis. Both the topology and the chemical composition of the surface are affected by irradiation. The influence of the irradiation dose is shown. The chemical degradation of the layer results mainly in the decrease of atomic concentration of nitrogen and chlorine, and in the increase of atomic concentration of oxygen. At highest dose, carbonization becomes important. Furthermore, N 1s, C 1s and Cl 2p core levels testify that the formation of new chemical species occurs in implanted pthalocyanine films. All these processes are modified by subsequent heat treatment in different ways, depending on the applied implantation fluence.

  9. Memory effect of ball-milled and annealed nanosized hematite

    International Nuclear Information System (INIS)

    Bercoff, P.G.; Bertorello, H.R.; Oliva, M.I.

    2007-01-01

    Fine particles of hematite (mean size 55 nm) were produced by ball milling a mixture of hematite and pure Fe and annealing at 1000 o C. X-ray diffraction (XRD) and Moessbauer spectroscopy show that only α-Fe 2 O 3 is present in the final product, with lattice and Moessbauer parameters that correspond to bulk hematite. ZFC and FC magnetization measurements were performed from 5 to 300 K, at different applied fields. Two magnetic regimes were observed: one at low temperatures (≤100 K) that we ascribe to the magnetic moments in the outer shell of the particles that couple to the magnetic moments in the core, and another at higher temperature that corresponds to the Morin transition, finding that the Morin temperature is T M =246 K. The memory effect is clearly observed in magnetic measurements that start from different remanence states and explained as dependent on the ordering of the magnetic moments within the particles

  10. Formation of oxygen related donors in step-annealed CZ–silicon

    Indian Academy of Sciences (India)

    The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal ...

  11. Effect of heat moisture treatment and annealing on physicochemical ...

    African Journals Online (AJOL)

    Red sorghum starch was physically modified by annealing and heat moisture treatment. The swelling power and solubility increased with increasing temperature range (60-90°), while annealing and heatmoisture treatment decreased swelling power and solubility of starch. Solubility and swelling were pH dependent with ...

  12. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    Science.gov (United States)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  13. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.

    Science.gov (United States)

    Huang, Yu-Chih; Yang, Po-Yu; Huang, Hau-Yuan; Wang, Shui-Jinn; Cheng, Huang-Chung

    2012-07-01

    The influence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 degrees C for 30 mins exhibited a maximum field effect mobility (max muFE) of 9.36 cm2/V x s, on/off current ratio of 6.12 x 10(10), and a subthreshold slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max muFE of 6.61 cm2/V x s, on/off current ratio of 4.58 x 10(8), and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 degrees C for 30 mins in the nitrogen ambient would be degraded to have a max muFE of 0.18 cm2/V x s, on/off current ratio of 2.22 x 10(4), and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.

  14. Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

    Science.gov (United States)

    Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-07-01

    The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

  15. Electrode Materials, Thermal Annealing Sequences, and Lateral/Vertical Phase Separation of Polymer Solar Cells from Multiscale Molecular Simulations

    KAUST Repository

    Lee, Cheng-Kuang

    2014-12-10

    © 2014 American Chemical Society. The nanomorphologies of the bulk heterojunction (BHJ) layer of polymer solar cells are extremely sensitive to the electrode materials and thermal annealing conditions. In this work, the correlations of electrode materials, thermal annealing sequences, and resultant BHJ nanomorphological details of P3HT:PCBM BHJ polymer solar cell are studied by a series of large-scale, coarse-grained (CG) molecular simulations of system comprised of PEDOT:PSS/P3HT:PCBM/Al layers. Simulations are performed for various configurations of electrode materials as well as processing temperature. The complex CG molecular data are characterized using a novel extension of our graph-based framework to quantify morphology and establish a link between morphology and processing conditions. Our analysis indicates that vertical phase segregation of P3HT:PCBM blend strongly depends on the electrode material and thermal annealing schedule. A thin P3HT-rich film is formed on the top, regardless of bottom electrode material, when the BHJ layer is exposed to the free surface during thermal annealing. In addition, preferential segregation of P3HT chains and PCBM molecules toward PEDOT:PSS and Al electrodes, respectively, is observed. Detailed morphology analysis indicated that, surprisingly, vertical phase segregation does not affect the connectivity of donor/acceptor domains with respective electrodes. However, the formation of P3HT/PCBM depletion zones next to the P3HT/PCBM-rich zones can be a potential bottleneck for electron/hole transport due to increase in transport pathway length. Analysis in terms of fraction of intra- and interchain charge transports revealed that processing schedule affects the average vertical orientation of polymer chains, which may be crucial for enhanced charge transport, nongeminate recombination, and charge collection. The present study establishes a more detailed link between processing and morphology by combining multiscale molecular

  16. The effect of annealing on the time-dependent behavior of isotactic polypropylene at finite strains

    DEFF Research Database (Denmark)

    Drozdov, Aleksey D.; Christiansen, Jesper de Claville

    2002-01-01

    Four series of tensile relaxation tests are performed on isotactic polypropylene at elongations up to the necking point. In the first series of experiments, injection-molded samples are used without thermal pre-treatment. In the other series, the specimens are annealed for 24 h prior to testing a...... at annealing. In the post-critical region (large strains), an increase in the fraction of active amorphous domains is attributed to disintegration of primary (thick) lamellae....

  17. Effect of tensile stress on the annealed structure of a metallic glass

    International Nuclear Information System (INIS)

    Vianco, P.T.; Li, J.C.M.

    1987-01-01

    The low-temperature (120 0 --245 0 C) structural relaxation of Metglas/sup R/ 2826B (Ni 49 Fe 29 P 14 B 6 Si 2 ) amorphous alloy was investigated for samples subjected to a tensile stress in the range of 20--400 MPa during annealing. The stress-annealed samples demonstrated a much smaller increase of microhardness than was observed in similarly annealed ribbons without a stress. Further heat treatment of the stress-annealed specimens, this time without the stress, was capable of increasing the microhardnesses of only some ribbons to values equal to those of samples similarly heat treated initially without a stress. An additional exothermic peak in the differential scanning calorimetry (DSC) thermograms of the stress-annealed specimens indicated the presence of a more disordered structure at room temperature, which was found to correlate with the lower microhardness values. Otherwise, those artifacts of the DSC thermograms that were characteristic of samples annealed without a stress were still present in the stress-annealed ribbons. No effect on the crystallization temperature was noted but the glass transition temperature was increased in the stress-annealed case with respect to values attained when the stress was absent during heat treatment. A reduction in the degree of embrittlement of those samples annealed with a tensile stress was a further indication of more disorder in the stress-annealed ribbons

  18. Neutron flux and annealing effects on irradiation hardening of RPV materials

    Science.gov (United States)

    Chaouadi, R.; Gérard, R.

    2011-11-01

    This paper aims to examine an eventual effect of neutron flux, sometimes referred to as dose rate effect, on irradiation hardening of a typical A533B reactor pressure vessel steel. Tensile tests on both low flux (reactor surveillance data) and high flux (BR2 reactor) were performed in a large fluence range. The obtained results indicate two features. First, the surveillance data exhibit a constant (˜90 MPa) higher yield strength than the high flux data. However, this difference cannot be explained from a flux effect but most probably from differences in the initial tensile properties. The hardening kinetic of both low and high flux is the same. Annealing at low temperature, 345 °C/40 h, to eventually reveal unstable matrix damage did not affect both BR2 and surveillance specimens. This is confirmed by other annealing experimental data including both tensile and hardness measurements and tensile data on A508 forging and weld. It is suggested that the absence of flux effect on the tensile properties while different radiation-induced microstructures can be attributed to thermal ageing effects.

  19. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  20. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

    International Nuclear Information System (INIS)

    Fu Mingyue; Tsai, J.-H.; Yang, C.-F.; Liao, C.-H.

    2008-01-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3x10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

  1. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    International Nuclear Information System (INIS)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-01-01

    A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

  2. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  3. Effect of pressure on the radiation annealing of recoil atoms in chromates

    International Nuclear Information System (INIS)

    Stamouli, M.I.

    1986-01-01

    The effect of pressure on the annealing of recoil atoms by gamma radiation in neutron irradiated potassium chromate, ammonium chromate and ammonium dichromate was studied. In potassium chromate the pressure applied before the gamma-irradiation was found to retard the radiation annealing process. In ammonium chromate and ammonium dichromate the radiation annealing was found to be enhanced in the compressed samples in comparison to the noncompressed ones. (author)

  4. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond; Lee, Jong Suk; Koros, William J.

    2010-01-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  5. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond

    2010-07-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  6. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  7. Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

    International Nuclear Information System (INIS)

    Biggeri, U.

    1995-01-01

    High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

  8. Enhanced antiadhesive properties of chitosan/hyaluronic acid polyelectrolyte multilayers driven by thermal annealing: Low adherence for mammalian cells and selective decrease in adhesion for Gram-positive bacteria.

    Science.gov (United States)

    Muzzio, Nicolás E; Pasquale, Miguel A; Diamanti, Eleftheria; Gregurec, Danijela; Moro, Marta Martinez; Azzaroni, Omar; Moya, Sergio E

    2017-11-01

    The development of antifouling coatings with restricted cell and bacteria adherence is fundamental for many biomedical applications. A strategy for the fabrication of antifouling coatings based on the layer-by-layer assembly and thermal annealing is presented. Polyelectrolyte multilayers (PEMs) assembled from chitosan and hyaluronic acid were thermally annealed in an oven at 37°C for 72h. The effect of annealing on the PEM properties and topography was studied by atomic force microscopy, ζ-potential, circular dichroism and contact angle measurements. Cell adherence on PEMs before and after annealing was evaluated by measuring the cell spreading area and aspect ratio for the A549 epithelial, BHK kidney fibroblast, C2C12 myoblast and MC-3T3-E1 osteoblast cell lines. Chitosan/hyaluronic acid PEMs show a low cell adherence that decreases with the thermal annealing, as observed from the reduction in the average cell spreading area and more rounded cell morphology. The adhesion of S. aureus (Gram-positive) and E. coli (Gram-negative) bacteria strains was quantified by optical microscopy, counting the number of colony-forming units and measuring the light scattering of bacteria suspension after detachment from the PEM surface. A 20% decrease in bacteria adhesion was selectively observed in the S. aureus strain after annealing. The changes in mammalian cell and bacteria adhesion correlate with the changes in topography of the chitosan/hyaluronic PEMs from a rough fibrillar 3D structure to a smoother and planar surface after thermal annealing. Copyright © 2017. Published by Elsevier B.V.

  9. Comparison of different experimental and analytical measures of the thermal annealing response of neutron-irradiated RPV steels

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    The thermal annealing response of several materials as indicated by Charpy transition temperature (TT) and upper-shelf energy (USE), crack initiation toughness, K Jc , predictive models, and automated-ball indentation (ABI) testing are compared. The materials investigated are representative reactor pressure vessel (RPV) steels (several welds and a plate) that were irradiated for other tasks of the Heavy-Section Steel Irradiation (HSSI) Program and are relatively well characterized in the unirradiated and irradiated conditions. They have been annealed at two temperatures, 343 and 454 C (650 and 850 F) for varying lengths of time. The correlation of the Charpy response and the fracture toughness, ABI, and the response predicted by the annealing model of Eason et al. for these conditions and materials appears to be reasonable. The USE after annealing at the temperature of 454 C appears to recover at a faster rate than the TT, and even over-recovers (i.e., the recovered USE exceeds that of the unirradiated material)

  10. Development of Bake Hardening Effect by Plastic Deformation and Annealing Conditions

    Directory of Open Access Journals (Sweden)

    Kvačkaj, T.

    2006-01-01

    Full Text Available The paper deals with the classification of steel sheets for automotives industry on the basis of strength and structural characteristics. Experimental works were aimed to obtain the best possible strengthening parameters as well as work hardening and solid solution ferrite hardening, which are the result of thermal activation of interstitial carbon atoms during paint-baking of auto body. Hardening process coming from interstitial atoms is realized as two-step process. The first step is BH (bake hardening effect achieved by interaction of interstitial atoms with dislocations. The Cottrels atmosphere is obtained. The second step of BH effect is to produced the hardening from precipitation of the carbon atoms in e-carbides, or formation of Fe32C4 carbides. WH (work hardening effect is obtained as dislocation hardening from plastic deformations during sheet deep drawing. Experimental works were aimed at as to achieve such plastic material properties after cold rolling, annealing and skin-pass rolling, which would be able to classify the material ZStE220BH into the drawing categories at the level of DQ – DDQ. As resulting from the experimental results, the optimal treatment conditions for the maximal sum (WH+BH = 86 MPa are as follows: total cold rolling deformation ecold = 65 %, annealing temperature Tanneal. = 700 °C.

  11. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  12. Study of the optical properties and the carbonaceous clusters in thermally-annealed CR-39 and Makrofol-E polymer-based solid-state nuclear track detectors

    International Nuclear Information System (INIS)

    El Ghazaly, M.

    2012-01-01

    The induced modifications in the optical properties of CR-39 and Makrofol-E polymer-based solid state nuclear track detectors were investigated after thermal annealing at a temperature of 200 .deg. C for different durations. The optical properties were studied using an UV-visible spectrophotometer. From the UV-visible spectra, the direct and the indirect optical band gaps, Urbach's energies, and the number of carbon atoms in a cluster were determined. The absorbance of CR-39 plastic detector was found to decrease with increasing annealing time while the absorbance of Makrofol-E decreased with increasing annealing time. The width of the tail of localized states in the band gap ΔE was evaluated with the Urbach method. The optical energy band gaps were obtained from the direct and the indirect allowed transitions in K-space. Both of the direct and the indirect band gaps of the annealed CR-39 detector decrease with increasing annealing time while in Makrofol-E, they decreased after an annealing time of 15 minute and then showed no remarkable changes for a prolonged annealing times. Urbach's energy decreased significantly for both CR-39 and Makrofol-E with increasing annealing time. The number of carbon atoms in a cluster increased in the CR-39 detector with increasing annealing time while it decreased with increasing annealing time for Makrofol-E. We may conclude that the CR-39 detector undergoes greater modifications than the Makrofol-E detector upon thermal annealing at 200 .deg. C. In conclusion, the induced modifications in the optical properties of CR-39 and Makrofol-E are correlated with the temperature and the duration of annealing.

  13. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Shriniwas, E-mail: sniwas89@gmail.com; Kaur, Inderpreet, E-mail: inderpreety@yahoo.co.in [Academy of Scientific and Innovative Research- Central Scientific Instruments Organisation (AcSIR-CSIO), Sector-30C, Chandigarh (India); Council of Scientific and Industrial Research- Central Scientific Instruments Organisation (CSIR-CSIO), Sector-30C, Chandigarh (India)

    2016-04-13

    Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  14. Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

    International Nuclear Information System (INIS)

    Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

    2011-01-01

    Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

  15. Annealing effects on strain and stress sensitivity of polymer optical fibre based sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Zubel, M. G.

    2016-01-01

    The annealing effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors after their photoinscription are investigated. PMMA optical fibre based Bragg grating sensors are first photo-inscribed and then they were placed into hot water for annealing. Strain, stress...... fibre tends to increase the strain, stress and force sensitivity of the photo-inscribed sensor....

  16. Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

    Science.gov (United States)

    Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

    2018-05-01

    The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

  17. Current-induced metal-insulator transition in VO x thin film prepared by rapid-thermal-annealing

    International Nuclear Information System (INIS)

    Cho, Choong-Rae; Cho, SungIl; Vadim, Sidorkin; Jung, Ranju; Yoo, Inkyeong

    2006-01-01

    The phenomenon of metal-insulator transition (MIT) in polycrystalline VO x thin films and their preparations have been studied. The films were prepared by sputtering of vanadium thin films succeeded by Rapid Thermal Annealing (RTA) in oxygen ambient at 500 deg. C. Crystalline, compositional, and morphological characterizations reveal a continuous change of phase from vanadium metal to the highest oxide phase, V 2 O 5 , with the time of annealing. Electrical MIT switching has been observed in these films. Sweeping mode, electrode area, and temperature dependent MIT has been studied in Pt/VO x /Pt vertical structure. The important parameters for MIT in VO x have been found to be the current density and the electric field, which depend on carrier density in the films

  18. Investigation of Annealing and Blend Concentration Effects of Organic Solar Cells Composed of Small Organic Dye and Fullerene Derivative

    Directory of Open Access Journals (Sweden)

    Yasser A. M. Ismail

    2011-01-01

    Full Text Available We have fabricated bulk heterojunction organic solar cells using coumarin 6 (C6 as a small organic dye, for light harvesting and electron donation, with fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM, acting as an electron acceptor, by spin-coating technique. We have investigated thermal annealing and blend concentration effects on light harvesting, photocurrent, and performance parameters of the solar cells. In this work, we introduced an experimental method by which someone can easily detect the variation in the contact between active layer and cathode due to thermal annealing after cathode deposition. We have showed, in this work, unusual behavior of solar cell composed of small organic molecules under the influence of thermal annealing at different conditions. This behavior seemed uncommon for polymer solar cells. We try from this work to understand device physics and to locate a relationship between production parameters and performance parameters of the solar cell based on small organic molecules.

  19. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  20. Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

  1. Growth stress buildup in ion beam sputtered Mo thin films and comparative study of stress relaxation upon thermal annealing or ion irradiation

    International Nuclear Information System (INIS)

    Debelle, A.; Abadias, G.; Michel, A.; Jaouen, C.; Pelosin, V.

    2007-01-01

    In an effort to address the understanding of the origin of growth stress in thin films deposited under very energetic conditions, the authors investigated the stress state and microstructure of Mo thin films grown by ion beam sputtering (IBS) as well as the stress relaxation processes taking place during subsequent thermal annealing or ion irradiation. Different sets of samples were grown by varying the IBS deposition parameters, namely, the energy E 0 and the flux j of the primary ion beam, the target-to-sputtering gas mass ratio M 1 /M 2 as well as film thickness. The strain-stress state was determined by x-ray diffraction using the sin 2 ψ method and data analyzed using an original stress model which enabled them to correlate information at macroscopic (in terms of stress) and microscopic (in terms of defect concentration) levels. Results indicate that these refractory metallic thin films are characterized by a high compressive growth stress (-2.6 to -3.8 GPa), resulting from the creation of a large concentration (up to ∼1.4%) of point or cluster defects, due to the atomic peening mechanism. The M 1 /M 2 mass ratio enables tuning efficiently the mean deposited energy of the condensing atoms; thus, it appears to be the more relevant deposition parameter that allows modifying both the microstructure and the stress level in a significant way. The growth stress comes out to be highly unstable. It can be easily relaxed either by postgrowth thermal annealing or ion irradiation in the hundred keV range at very low dose [<0.1 dpa (displacement per atom)]. It is shown that thermal annealing induces deleterious effects such as oxidation of the film surface, decrease of the film density, and in some cases adhesion loss at the film/substrate interface, while ion irradiation allows controlling the stress level without generating any macroscopic damage

  2. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

    2007-01-01

    Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

  4. Annealing effect on the microstructure modification and tribological properties of amorphous carbon nitride films

    Science.gov (United States)

    Wang, Zhou; Wang, Chengbing; Wang, Qi; Zhang, Junyan

    2008-10-01

    The influences of thermal annealing on the microstructural and tribological properties of amorphous carbon nitride films were investigated. X-ray photoelectron spectroscopy, Raman spectroscopy, and Fourier transform infrared spectrometer were utilized to characterize bond configuration and chemical state of the films. The results indicated that at low annealing temperatures (200 and 300 °C), the volatile species and surface contamination are easily dissociated without obvious bulk modification; while at high annealing temperatures (400 and 500 °C), the microstructure of carbon nitride films changed and favored a graphitization process, which indicated the growth of more graphitic film structures. The faint Raman signal of C≡N decreased with annealing temperature (TA) and completely disappeared at TA of 500 °C, indicating that nitrile bonds were thermal unstable under high temperature. Surprisingly, the tribological properties of the films showed a remarkably decreasing in friction coefficient as the TA increased; it is attributed to the graphitization of carbon nitride films during thermal annealing, which favored transfer film formation between the carbon nitride films and counterface materials. The transfer films benefit the decrease in coefficient of friction.

  5. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  6. Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

    Science.gov (United States)

    Kalita, J. M.; Wary, G.

    2017-07-01

    We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

  7. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  8. Thermal defect annealing of swift heavy ion irradiated ThO2

    Science.gov (United States)

    Palomares, Raul I.; Tracy, Cameron L.; Neuefeind, Joerg; Ewing, Rodney C.; Trautmann, Christina; Lang, Maik

    2017-08-01

    Isochronal annealing, neutron total scattering, and Raman spectroscopy were used to characterize the structural recovery of polycrystalline ThO2 irradiated with 2-GeV Au ions to a fluence of 1 × 1013 ions/cm2. Neutron diffraction patterns show that the Bragg signal-to-noise ratio increases and the unit cell parameter decreases as a function of isochronal annealing temperature, with the latter reaching its pre-irradiation value by 750 °C. Diffuse neutron scattering and Raman spectroscopy measurements indicate that an isochronal annealing event occurs between 275-425 °C. This feature is attributed to the annihilation of oxygen point defects and small oxygen defect clusters.

  9. Feasibility of and methodology for thermal annealing an embrittled reactor vessel. Volume 2. Detailed technical description of the work. Final report

    International Nuclear Information System (INIS)

    Mager, T.R.

    1982-11-01

    Program materials were three weldments fabricated from A533 Grade B class 1 plate material and Mn Mo Ni weld wire. Specimens fabricated from the three submerged arc weldments included Type A Charpy V-notch impact, small size tensile, and 1/2T compact tension specimens. After encapsulation, the specimens were irradiated at the UVAR to two fluence levels, 8 x 10 18 n/cm 2 and 1.5 x 10 19 n/cm 2 (E > 1 MeV). Specimens were subjected to sequences of irradiation and anneals and then tested. Metallurgial/mechanistic analyses were also performed. It was concluded that excellent recovery of all properties could be achieved by annealing at greater than or equal to 850 0 F (454 0 C) for 168 hours. Such an annealing resulted in ductile-brittle transition temperature shift recovery of 80 to 100%, and reirradiation after this annealing indicated that the ductile-brittle transition temperature shift appears to continue at the expected rate. Several drawbacks were identified for wet thermal annealing. A conceptual dry in-situ thermal annealing procedure was developed for thermal annealing embrittled reactor vessels

  10. Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

    Directory of Open Access Journals (Sweden)

    Valeria Bragaglia

    2017-08-01

    Full Text Available A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111 oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.

  11. The influence of thermal annealing on structure and oxidation of iron nanowires

    Directory of Open Access Journals (Sweden)

    Krajewski Marcin

    2015-03-01

    Full Text Available Raman spectroscopy as well as Mössbauer spectroscopy were applied in order to study the phase composition of iron nanowires and its changes, caused by annealing in a neutral atmosphere at several temperatures ranging from 200°C to 800°C. As-prepared nanowires were manufactured via a simple chemical reduction in an external magnetic field. Both experimental techniques proved formation of the surface layer covered by crystalline iron oxides, with phase composition dependent on the annealing temperature (Ta. At higher Ta, hematite was the dominant phase in the nanowires.

  12. Instantons in Quantum Annealing: Thermally Assisted Tunneling Vs Quantum Monte Carlo Simulations

    Science.gov (United States)

    Jiang, Zhang; Smelyanskiy, Vadim N.; Boixo, Sergio; Isakov, Sergei V.; Neven, Hartmut; Mazzola, Guglielmo; Troyer, Matthias

    2015-01-01

    Recent numerical result (arXiv:1512.02206) from Google suggested that the D-Wave quantum annealer may have an asymptotic speed-up than simulated annealing, however, the asymptotic advantage disappears when it is compared to quantum Monte Carlo (a classical algorithm despite its name). We show analytically that the asymptotic scaling of quantum tunneling is exactly the same as the escape rate in quantum Monte Carlo for a class of problems. Thus, the Google result might be explained in our framework. We also found that the transition state in quantum Monte Carlo corresponds to the instanton solution in quantum tunneling problems, which is observed in numerical simulations.

  13. Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P{sup +}-implanted Si studied using monoenergetic positron beams

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kitano, Tomohisa; Watanabe, Masahito; Kawano, Takao; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa

    1996-04-01

    Effects of oxygen atoms recoiled from SiO{sub 2} films on depth profiles of defects and annealing processes in P{sup +}-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P{sup +}-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700degC. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO{sub 2}/Si interface, and such defects were dissociated by annealing at 1000degC. (author)

  14. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  15. Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

    Science.gov (United States)

    Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

    2018-04-01

    In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

  16. Effect of Intermediate Annealing on Microstructure and Property of 5182 Aluminum Alloy Sheet for Automobile

    Directory of Open Access Journals (Sweden)

    WANG Yu

    2016-09-01

    Full Text Available Effect of intermediate annealing on the microstructure and properties of 5182 aluminum alloy sheet with full annealed state (5182-O was investigated by means of optical microscope, scanning electron microscope and universal testing machine. The results indicate that compared with 5182-O sheet without intermediate annealing, 5182-O sheet with intermediate annealing possesses too fine grain size, intermetallic compounds not broken enough, larger size intermetallic particles, less dispersed phase. Yield strength and ultimate tensile strength, work hardening exponent and normal anisotropy of plastic strain ratio decrease but planner anisotropy of plastic strain ratio increases. The mechanical properties and forming ability of 5182-O aluminum alloy sheet and its microstructure are not improved significantly after intermediate annealing.

  17. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    Science.gov (United States)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  18. Effect of Solution Annealing on Susceptibility to Intercrystalline Corrosion of Stainless Steel with 20% Cr and 8% Ni

    Science.gov (United States)

    Taiwade, R. V.; Patil, A. P.; Patre, S. J.; Dayal, R. K.

    2013-06-01

    In general, as-received (AR) austenitic stainless steels (ASSs) contain complex carbide precipitates due to manufacturing operations, subsequent annealing treatment, or due to the fabrication processes such as welding. The presence of pre-existing carbides leads to cumulative sensitization and make the steel susceptible to intercrystalline corrosion (ICC)/intergranular corrosion (IGC) which causes premature failure during service. Solution annealing (SA) is one of the ways to deal with such situations. In this present investigation, the AR (hot rolled and mill annealed) chromium-nickel (Cr-Ni) ASS is compared with SA Cr-Ni ASS. The extent of ICC/IGC was evaluated qualitatively and quantitatively by various electrochemical tests including ASTM standard A-262 Practice A and Practice E, double loop electrochemical potentiokinetic reactivation and electrochemical impedance spectroscopy. The degree of sensitization for hot rolled mill annealed AR condition is found to be substantially higher (51.55%) than that of SA condition (26.9%) for thermally aged samples (at 700 °C). The chemical composition across the grain boundary was measured using electron probe micro-analyzer for both (AR and SA) conditions and confirms that the pre-sensitization effect was completely removed after SA treatment.

  19. 1-Dimensional simulation of thermal annealing in a commercial nuclear power plant reactor pressure vessel wall section

    International Nuclear Information System (INIS)

    Nakos, J.T.; Rosinski, S.T.; Acton, R.U.

    1994-11-01

    The objective of this work was to provide experimental heat transfer boundary condition and reactor pressure vessel (RPV) section thermal response data that can be used to benchmark computer codes that simulate thermal annealing of RPVS. This specific protect was designed to provide the Electric Power Research Institute (EPRI) with experimental data that could be used to support the development of a thermal annealing model. A secondary benefit is to provide additional experimental data (e.g., thermal response of concrete reactor cavity wall) that could be of use in an annealing demonstration project. The setup comprised a heater assembly, a 1.2 in x 1.2 m x 17.1 cm thick [4 ft x 4 ft x 6.75 in] section of an RPV (A533B ferritic steel with stainless steel cladding), a mockup of the open-quotes mirrorclose quotes insulation between the RPV and the concrete reactor cavity wall, and a 25.4 cm [10 in] thick concrete wall, 2.1 in x 2.1 in [10 ft x 10 ft] square. Experiments were performed at temperature heat-up/cooldown rates of 7, 14, and 28 degrees C/hr [12.5, 25, and 50 degrees F/hr] as measured on the heated face. A peak temperature of 454 degrees C [850 degrees F] was maintained on the heated face until the concrete wall temperature reached equilibrium. Results are most representative of those RPV locations where the heat transfer would be 1-dimensional. Temperature was measured at multiple locations on the heated and unheated faces of the RPV section and the concrete wall. Incident heat flux was measured on the heated face, and absorbed heat flux estimates were generated from temperature measurements and an inverse heat conduction code. Through-wall temperature differences, concrete wall temperature response, heat flux absorbed into the RPV surface and incident on the surface are presented. All of these data are useful to modelers developing codes to simulate RPV annealing

  20. Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

    Czech Academy of Sciences Publication Activity Database

    Horák, Pavel; Remeš, Zdeněk; Bejšovec, Václav; Vacík, Jiří; Daniš, S.; Kormunda, M.

    2017-01-01

    Roč. 640, č. 10 (2017), s. 52-59 ISSN 0040-6090 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR(CZ) GA14-05053S; GA MŠk LM2015056 Institutional support: RVO:61389005 ; RVO:68378271 Keywords : NiO * ion beam sputtering * thermal annealing * nuclear analytical methods * optical properties Subject RIV: JK - Corrosion ; Surface Treatment of Materials; BM - Solid Matter Physics ; Magnetism (FZU-D) OBOR OECD: Coating and films; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D) Impact factor: 1.879, year: 2016

  1. Optical and photoelectric properties of nanolamellar structures obtained by thermal annealing of InSe plates in Zn vapours

    Energy Technology Data Exchange (ETDEWEB)

    Untila, Dumitru; Evtodiev, Igor [Faculty of Physics and Engineering, Moldova State University, Chisinau (Moldova, Republic of); Ghitu Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of); Caraman, Iuliana [Engineering Department ' ' Vasile Alecsandri' ' , University of Bacau (Romania); Spalatu, Nicolae [Department of Materials Science, Tallinn University of Technology (Estonia); Dmitroglo, Liliana; Caraman, Mihail [Faculty of Physics and Engineering, Moldova State University, Chisinau (Moldova, Republic of)

    2018-02-15

    The structural, optical and photoelectric properties of InSe crystals grown by Bridgman-Stockbarger method and ZnSe/InSe structures obtained on InSe by thermal annealing in Zn vapours are studied in this paper. The study of structural properties confirms that ZnSe compound is formed. The analysis of photoelectric properties reveal that both the ZnSe-InSe composite layer and the composite/InSe heterojunction are photosensitive in the VIS-NIR spectral region. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  3. Interlayer growth in Mo/B4C multilayered structures upon thermal annealing

    International Nuclear Information System (INIS)

    Nyabero, S. L.; Kruijs, R. W. E. van de; Yakshin, A. E.; Zoethout, E.; Bosgra, J.; Loch, R. A.; Blanckenhagen, G. von; Bijkerk, F.

    2013-01-01

    Both multilayer period thickness expansion and compaction were observed in Mo/B 4 C multilayers upon annealing, and the physical causes for this were explored in detail. Using in situ time-dependent grazing incidence X-ray reflectometry, period changes down to picometer-scale were resolved. It was shown that the changes depend on the thickness of the B 4 C layers, annealing temperature, and annealing time. Although strong stress relaxation during annealing was observed, it was excluded as a cause for period expansion. Auger electron spectroscopy and wide angle X-ray diffraction measurements revealed the growth of interlayers, with associated period changes influenced by the supply of B and C atoms to the growing compound interlayers. For multilayers with a Mo thickness of 3 nm, two regimes were recognized, depending on the deposited B 4 C thickness: in multilayers with B 4 C ≤ 1.5 nm, the supply of additional Mo into the already formed MoB x C y interlayer was dominant and led to densification, resulting in period compaction. For multilayers with B 4 C ≥ 2 nm, the B and C enrichment of interlayers formed low density compounds and yielded period expansion.

  4. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    International Nuclear Information System (INIS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-01-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

  5. Air atmosphere annealing effects on LSO:Ce crystal

    Czech Academy of Sciences Publication Activity Database

    Ding, D.; Feng, H.; Ren, G.; Nikl, Martin; Qin, L.; Pan, S.; Yang, F.

    2010-01-01

    Roč. 57, č. 3 (2010), s. 1272-1277 ISSN 0018-9499 R&D Projects: GA MŠk ME08034 Institutional research plan: CEZ:AV0Z10100521 Keywords : annealing * cerium * LSO * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.519, year: 2010

  6. Effect of annealing process of iron powder on magnetic properties ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Iron powder magnetic cores are used as soft magnetic rotors, in micro special motors such as BS brake motors, refrigerator compressor motors and brushless servo motors. Heat treatment of iron powder played an important role in the magnetic properties and loss of the motor cores. After the annealing process,.

  7. Effects of thermal treatment on the anodic growth of tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Chai, Y., E-mail: yqchai85@gmail.com; Tam, C.W.; Beh, K.P.; Yam, F.K.; Hassan, Z.

    2015-08-03

    This work reports the investigation of the effects of thermal treatment on anodic growth tungsten oxide (WO{sub 3}). The increase of the thermal treatment temperature above 400 °C significantly influences WO{sub 3} film where high porosity structure reduces to more compact film. As-grown film is amorphous, which transforms to monoclinic/orthorhombic phase upon annealing at 300–600 °C. With the reducing of porous structure, preferential growth of (002) plane shifts to (020) plane at 600 °C with more than twentyfold increase of peak's intensity compared to the film annealed at 500 °C. Films annealed at low thermal treatment show better ion intercalation and reversibility during electrochemical measurements; however, it has larger optical band gap. Photoelectrochemical measurement reveals that film annealed at 400 °C exhibits the best photocatalytic performance among the films annealed at 300–600 °C. - Highlights: • Porosity of the WO{sub 3} reduces as annealing temperature increases above 400 °C. • As-grown film is amorphous which transforms to monoclinic/orthorhombic upon annealing. • As-grown film shows better ion intercalation in electrochemical process. • Optical band gap of WO{sub 3} reduces as the annealing temperature increases. • Film annealed at 400 °C exhibits best photocatalytic performance.

  8. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  9. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Hlatshwayo, T.T., E-mail: thulani.hlatshwayo@up.ac.za [Physics Department, University of Pretoria, Pretoria (South Africa); Sebitla, L.D. [Physics Department, University of Pretoria, Pretoria (South Africa); Physics Department, University of Botswana, Gaborone (Botswana); Njoroge, E.G.; Mlambo, M.; Malherbe, J.B. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2017-03-15

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 10{sup 16} ions/cm{sup 2} and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  10. Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

    International Nuclear Information System (INIS)

    Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

    2004-01-01

    Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

  11. Chemical and electrical characterisation of the segregation of Al from a CuAl alloy (90%:10% wt) with thermal anneal

    Energy Technology Data Exchange (ETDEWEB)

    Byrne, C., E-mail: conor.byrne2@mail.dcu.ie [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); Brady, A.; Walsh, L.; McCoy, A.P.; Bogan, J. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); McGlynn, E. [School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland); Rajani, K.V. [School of Electronic Engineering, Dublin City University, Dublin 9 (Ireland); Hughes, G. [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland); School of Physical Sciences, National Centre for Plasma Science and Technology, Dublin City University, Dublin 9 (Ireland)

    2016-01-29

    A copper–aluminium (CuAl) alloy (90%:10% wt) has been investigated in relation to segregation of the alloying element Al, from the alloy bulk during vacuum anneal treatments. X-ray photoelectron spectroscopy (XPS) measurements were used to track the surface enrichment of Al segregating from the alloy bulk during in situ ultra-high vacuum anneals. Secondary ion mass spectroscopy (SIMS) indicates a build-up of Al at the surface of the annealed alloy relative to the bulk composition. Metal oxide semiconductor (MOS) CuAl/SiO{sub 2}/Si structures show a shift in flatband voltage upon thermal anneal consistent with the segregation of the Al to the alloy/SiO{sub 2} interface. Electrical four point probe measurements indicate that the segregation of Al from the alloy bulk following thermal annealing results in a decrease in film resistivity. X-ray diffraction data shows evidence for significant changes in crystal structure upon annealing, providing further evidence for expulsion of Al from the alloy bulk. - Highlights: • CuAl alloy (90%:Al 10% wt) deposited and vacuum annealed • XPS and SIMS data show segregation of Al from the alloy bulk. • Chemical changes seen indicate the reduction of Cu oxide and growth of Al Oxide. • Electrical measurements indicate a chemical change at the metal/SiO{sub 2} interface. • All data consistent with Cu diffusion barrier layer formed.

  12. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    International Nuclear Information System (INIS)

    Malek, M.F.; Mamat, M.H.; Musa, M.Z.; Soga, T.; Rahman, S.A.; Alrokayan, Salman A.H.; Khan, Haseeb A.; Rusop, M.

    2015-01-01

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T a ) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T a was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T a . All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T a temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T a temperature

  13. Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM) Pulau Pinang, Jalan Permatang Pauh, 13500 Permatang Pauh, Pulau Pinang (Malaysia); Soga, T. [Department of Frontier Materials, Nagoya Institute of Technology (NITech), Nagoya 466-8555 (Japan); Rahman, S.A. [Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A.H.; Khan, Haseeb A. [Department of Biochemistry, College of Science, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2015-04-15

    We report on the growth of Al-doped ZnO (ZAO) thin films prepared by the sol–gel technique associated with dip-coating onto Corning 7740 glass substrates. The influence of varying thermal annealing (T{sub a}) temperature on crystallisation behaviour, optical and electrical properties of ZAO films has been systematically investigated. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The metamorphosis of strain/stress effects in ZAO thin films has been investigated using X-ray diffraction. The as growth films have a large compressive stress of 0.55 GPa, which relaxed to 0.25 GPa as the T{sub a} was increased to 500 °C. Optical parameters such as optical transmittance, absorption coefficient, refractive index and optical band gap energy have been studied and discussed with respect to T{sub a}. All films exhibit a transmittance above 80–90% along the visible–NIR range up to 1500 nm and a sharp absorption onset below 400 nm corresponding to the fundamental absorption edge of ZnO. Experimental results show that the tensile stress in the films reveals an incline pattern with the optical band gap energy, while the compressive stress shows opposite relation. - Highlights: • Minimum stress of highly c-axis oriented ZAO was grown at suitable T{sub a} temperature. • The ZAO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZAO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on T{sub a} temperature.

  14. Effect of annealing on microstructure evolution in CoFeB/MgO/CoFeB heterostructures by positron annihilation

    Science.gov (United States)

    Zhao, Chong-Jun; Lu, Xiang-An; Zhao, Zhi-Duo; Li, Ming-Hua; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Zhang, Jing-Yan; Yu, Guang-Hua

    2013-09-01

    As one of the most powerful tools for investigation of defects of materials, positron annihilation spectroscopy was employed to explore the thermal effects on the film microstructure evolution in CoFeB/MgO/CoFeB heterostructures. It is found that high annealing temperature can drive vacancy defects agglomeration and ordering acceleration in the MgO barrier. Meanwhile, another important type of defects, vacancy clusters, which are formed via the agglomeration of vacancy defects in the MgO barrier after annealing, still exists inside the MgO barrier. All these behaviors in the MgO barrier could potentially impact the overall performance in MgO based magnetic tunnel junctions.

  15. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  16. Annealing Effects on the Magnetization of Co-Ni-B Amorphous Nanoparticles

    International Nuclear Information System (INIS)

    Vargas, J.M.

    2001-01-01

    Chemically prepared (Co x Ni 1-x ) 1 00 -y B y (x=0.5, 0.75, 1; y∼30) amorphous fine particles were characterized by x-ray diffraction, DTA and TGA, and in-situ magnetic measurement as a function of annealing temperature in an inert atmosphere.Magnetic measurement performed in as prepared and ∼150C degree annealed samples show an increase of the saturation magnetization and magnetic moment after thermal tretment.Room temperature magnetization increases by factors of ∼3 in average.These measurements may indicate a local re-ordering of the amorphous phase at temperatures much lower than the full crystallization temperature

  17. Formation of VO{sub 2} by rapid thermal annealing and cooling of sputtered vanadium thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ba, Cheikhou O. F., E-mail: cheikhou.ba.1@ulaval.ca; Fortin, Vincent; Bah, Souleymane T.; Vallée, Réal [Centre d' optique, photonique et laser (COPL), Université Laval, Québec G1V 0A6 (Canada); Pandurang, Ashrit [Thin Films and Photonics Research Group (GCMP), Department of Physics and Astronomy, Université de Moncton, Moncton, New Brunswick E1A 3E9 (Canada)

    2016-05-15

    Sputtered vanadium-rich films were subjected to rapid thermal annealing-cooling (RTAC) in air to produce vanadium dioxide (VO{sub 2}) thin films with thermochromic switching behavior. High heating and cooling rates in the thermal oxidation process provided an increased ability to control the film's microstructure. X-ray diffraction patterns of the films revealed less intense VO{sub 2} peaks compared to traditional polycrystalline samples fabricated with a standard (slower) cooling time. Such films also exhibit a high optical switching reflectance contrast, unlike the traditional polycrystalline VO{sub 2} thin films, which show a more pronounced transmittance switching. The authors find that the RTAC process stabilizes the VO{sub 2} (M2) metastable phase, enabling a rutile-semiconductor phase transition (R-M2), followed by a semiconductor–semiconductor phase transition (M2-M1).

  18. The influence of thermal annealing on the characteristics of different AL2O3 thermoluminescence dosimeters

    International Nuclear Information System (INIS)

    Ranogajec-Komor, M.; Vincekovic, M.; Knezevic, Z.; Miljanic, S.

    2002-01-01

    The manufacturers of TL detectors usually recommend the annealing temperature and time, however they do not give instructions about the heating and cooling rates. From the aspect of practical routine work, every laboratory has to find the optimum heating and cooling method. In this work the influence of various parameters of annealing on the properties of TL dosimeters (sensitivity, reproducibility, the shape of the glow curve) was investigated. Various Al 2 O 3 :dosimeters were used. The TL dosimeters based on Al 2 O 3 can be used in different dose ranges depending on the crystal structure of the dosimeter material as well as the kind and concentration of the activator. In this work Al 2 O 3 :C 4 and Al 2 O 3 :Mg,Y with 0.5% and 1% of activator were investigated

  19. Thermoluminiscence and thermal annealing of F centres in KCL gamma irradiated

    International Nuclear Information System (INIS)

    Ausin Alonso, Vicente.

    1976-01-01

    The thermoluminiscence spectrum and phosphorescence decays of Harshaw KCl samples gamma irradiated at room temperature have been studied up to 400 0 C. For the six peaks found, the order of recombination kinetics, the pre-exponential factor and the activation energy have been obtained. It has been observed that the area under the thermoluminiscence curve is always proportional to the F centre concentration in the sample before heating. It was also found that there is an annealing step of F centres corresponding to each thermoluminiscence peak, when the temperature of the sample is raised at a constant rate. It is concluded that the F centres play the role of recombination centres in the annealing process, the interstitials being the mobile entities moving towards there combination centre. At some stage in the process light is emitted. (author)

  20. Effects of annealing time on the structure, morphology, and stress of gold–chromium bilayer film

    International Nuclear Information System (INIS)

    Zhang Hong; Wang Hu; Huang Hao-Peng; Jin Yun-Xia; Kong Fang-Yu; Cui Yun

    2016-01-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. (paper)

  1. Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

    International Nuclear Information System (INIS)

    Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

    2015-01-01

    Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

  2. Effect of cold working and annealing on stress corrosion cracking of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Yeon, Y.M.; Kwun, S.I.

    1983-01-01

    A study was made of the effects of cold working and annealing on the stress corrosion cracking of AISI 304 stainless steel in boiling 42% MgCl 2 solution. When the 60% or 76% of yield stress was applied, the resistance to SCC showed maximum at 30% of cold work. However, when the same load was applied to the annealed specimens after cold working, the resistance to SCC decreased abruptly at 675degC annealing. The fracture mode changed mode change mixed → intergranular → transgranular as the amount of cold work increased. (Author)

  3. Study of defects created in silicon during thermal annealings - Correlation with the presence of oxygen

    International Nuclear Information System (INIS)

    Olivier, Michel

    1975-01-01

    Defects generation and precipitation phenomena in Czochralski silicon crystals annealed ten of hours at 1000 C have been observed. The defects (perfect dislocation loops emitted by semi-coherent precipitates, Frank loops in correlation with coherent precipitates) are studied by Transmission Electron Microscopy, X-Ray Topography and chemical etching. The generation of defects is connected to the precipitation of interstitial oxygen as it is shown by studying the infrared absorption at 9 μm. We present a lot of experimental results which indicates that the precipitates are SiO 2 clusters; in particular, we show that this hypothesis can explain the presence, after annealing, of an infrared absorption band at 8,2 μm. Some results on Czochralski silicon crystals annealed at 1150 deg. C and 1250 deg. C are then presented. In particular, X-Ray Topography studies show the presence of large (∼100 μm) Frank loops which seem connected to oxygen precipitation. (author) [fr

  4. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  5. Toward the understanding of annealing effects on (GaIn)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

    2015-01-01

    (GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

  6. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  7. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  8. Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

    Directory of Open Access Journals (Sweden)

    Vojs M.

    2012-07-01

    Full Text Available Thin films of gallium-doped zinc oxide (ZnO:Ga were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1 × 1015 ÷ 2 × 1016 cm-2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550 °C resulted in n-type conductivity films with the highest electron concentration of 1.4 × 1020 cm-3. It was found that the annealing parameters had a profound impact on the film’s properties. A p-type conductivity (a hole concentration of 2.8 × 1019 cm-3, mobility of 0.6 cm2/V s was observed in a sample implanted with 1 × 1016 cm-2 after a rapid thermal annealing (RTA in N2 at 400 °C. Optical transmittance of all films was >84% in the wavelength range of 390–1100 nm. The SIMS depth profile of the complex 30NO− ions reproduces well a Gaussian profile of ion implantation. XRD patterns reveal a polycrystalline structure of N-implanted ZnO:Ga films with a c-axis preferred orientation of the crystallites. Depending on the annealing conditions, the estimated crystallite size increased 25 ÷ 42 nm and average micro-strains decreased 1.19 × 10-2 ÷ 6.5 × 10-3 respectively.

  9. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  10. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    Science.gov (United States)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  11. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  12. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    International Nuclear Information System (INIS)

    Rhee, Joo Yull

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder → order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by presumption that the recrystallization would be realized in such a way that the average atomic spacing would be reduced

  13. Effects of solvent evaporation conditions on solvent vapor annealed cylinder-forming block polymer thin films

    Science.gov (United States)

    Grant, Meagan; Jakubowski, William; Nelson, Gunnar; Drapes, Chloe; Baruth, A.

    Solvent vapor annealing is a less time and energy intensive method compared to thermal annealing, to direct the self-assembly of block polymer thin films. Periodic nanostructures have applications in ultrafiltration, magnetic arrays, or other structures with nanometer dimensions, driving its continued interest. Our goal is to create thin films with hexagonally packed, perpendicular aligned cylinders of poly(lactide) in a poly(styrene) matrix that span the thickness of the film with low anneal times and low defect densities, all with high reproducibility, where the latter is paramount. Through the use of our computer-controlled, pneumatically-actuated, purpose-built solvent vapor annealing chamber, we have the ability to monitor and control vapor pressure, solvent concentration within the film, and solvent evaporation rate with unprecedented precision and reliability. Focusing on evaporation, we report on two previously unexplored areas, chamber pressure during solvent evaporation and the flow rate of purging gas aiding the evaporation. We will report our exhaustive results following atomic force microscopy analysis of films exposed to a wide range of pressures and flow rates. Reliably achieving well-ordered films, while occurring within a large section of this parameter space, was correlated with high-flow evaporation rates and low chamber pressures. These results have significant implications on other methods of solvent annealing, including ``jar'' techniques.

  14. Transformation of photoluminescence and Raman scattering spectra of Si-rich Al{sub 2}O{sub 3} films at thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Vergara Hernandez, E. [UPIITA-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Torchynska, T.V., E-mail: ttorch@esfm.ipn.mx [ESFM-Instituto Politecnico Nacional, Mexico DF 07320 (Mexico); Jedrzejewski, J.; Balberg, I. [Racah Institute of Physics, Hebrew University, 91904 Jerusalem (Israel)

    2014-11-15

    The effect of thermal annealing on optical properties of Al{sub 2}O{sub 3} films with the different Si contents was investigated using the photoluminescence and Raman scattering methods. Si-rich Al{sub 2}O{sub 3} films were prepared by RF magnetron co-sputtering of Si and Al{sub 2}O{sub 3} targets on long quartz glass substrates. Photoluminescence (PL) spectra of as grown Si-rich Al{sub 2}O{sub 3} films are characterized by four PL bands with the peak positions at 2.90, 2.70, 2.30 and 1.45 eV. The small intensity Raman peaks related to the scattering in the amorphous Si phase has been detected in as grown films as well. Thermal annealing at 1150 °C for 90 min stimulates the formation of Si nanocrystals (NCs) in the film area with the Si content exceeded 50%. The Raman peak related to the scattering on optic phonons in Si NCs has been detected for this area. After thermal annealing the PL intensity of all mentioned PL bands decreases in the film area with smaller Si content (≤50%) and increases in the film area with higher Si content (≥50%). Simultaneously the new PL band with the peak position at 1.65 eV appears in the film area with higher Si content (≥50%). The new PL band (1.65 eV) is attributed to the exciton recombination inside of small size Si NCs (2.5–2.7 nm). In bigger size Si NCs (3.5–5.0 nm) the PL band at 1.65 eV has been not detected due to the impact, apparently, of elastic strain appeared at the Si/Al{sub 2}O{sub 3} interface. Temperature dependences of PL spectra for the Si-rich Al{sub 2}O{sub 3} films have been studied in the range of 10–300 K with the aim to reveal the mechanism of recombination transitions for the mentioned above PL bands 2.90, 2.70, 2.30 and 1.45 eV in as grown films. The thermal activation of PL intensity and permanent PL peak positions in the temperature range 10–300 K permit to assign these PL bands to defect related emission in Al{sub 2}O{sub 3} matrix.

  15. Effect of annealing temperature on the mechanical properties of zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. Hoop creep characteristics of zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The critical annealing temperature at which a minimum creep strain occurs decreases as the applied stress increases. An additional test at 700F and 30 ksi hoop stress was conducted to demonstrate that the critical annealing temperature is essentially independent of the test temperature. Plausible explanations based on differing substructures developed in cold-worked stress-relieved material are forwarded. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. R-parameters were determined from in situ transverse strain gage measurements in uniaxial tensile tests. P-parameters were calculated from uniaxial test data (R and yield stress) and hoop yield stress determined in biaxial, closed-end internal pressurization tests

  16. Continuous anneal method for characterizing the thermal stability of ultraviolet Bragg gratings

    DEFF Research Database (Denmark)

    Rathje, Jacob; Kristensen, Martin; Pedersen, Jens Engholm

    2000-01-01

    We present a new method for determining the long-term stability of UV-induced fiber Bragg gratings. We use a continuous temperature ramp method in which systematic variation of the ramp speed probes both the short- and long-term stability. Results are obtained both for gratings written in D2 loaded...... we resolve two separate energy distributions, suggesting that two different defects are involved. The experiments show that complicated decays originating from various energy distributions can be analyzed with this continuous isochronal anneal method. The results have both practical applications...

  17. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  18. The annealing effects on irradiated SiC piezo resistive pressure sensor

    International Nuclear Information System (INIS)

    Almaz, E.; Blue, T. E.; Zhang, P.

    2009-01-01

    The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

  19. Annealing Effect on Corrosion Behavior of the Beta-Quenched HANA Alloy

    International Nuclear Information System (INIS)

    Kim, Hyun Gil; Kim, Il Hyun; Choi, Byung Kwan; Park, Sang Yoon; Park, Jeong Yong; Jeong, Yong Hwan

    2009-01-01

    The advanced fuel cladding materials named as HANA cladding have been developed at KAERI for application of high burn-up and that cladding showed an improved performance in both in-pile and out-of-pile conditions. However, the cladding performance could be changed by the annealing conditions during the tube manufacturing process. Especially, the corrosion resistance is considerably sensitive to their microstructure which is determined by a manufacturing process in the high Nb-containing zirconium alloys. They reported that the corrosion properties of the Nb-containing Zr alloys were considerably affected by the microstructure conditions such as the Nb concentration in the matrix and the second phase types. Therefore, the corrosion behavior of HANA cladding having the high Nb could be considerably affected by the annealing time and temperatures. The purpose of this study is focused on the annealing effect of the beta quenched HANA alloy to obtain the optimum annealing conditions

  20. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  1. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    1993-01-01

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  2. Irradiation embrittlement and optimisation of annealing

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

  3. Shift in room-temperature photoluminescence of low-fluence Si{sup +}-implanted SiO{sub 2} films subjected to rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mingyue, Fu [Department of Avionics Engineering, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Tsai, J -H [Department of Mathematics and Physics, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan (China); Yang, C -F [Department of Chemical and Materials Engineering, National Kaohsiung University, Nan-Tzu District, Kaohsiung 811, Taiwan (China); Liao, C.-H. [Department of Physics, Chinese Military Academy, Fengshan, Kaohsiung 830, Taiwan (China)], E-mail: fumy@cc.cafa.edu.tw

    2008-12-15

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO{sub 2} films implanted by different doses of Si{sup +} ions. Room-temperature PL from 400-nm-thick SiO{sub 2} films implanted to a dose of 3x10{sup 16} cm{sup -2} shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO{sub 2} films followed by RTA may be effective for tuning Si-based photonic devices.

  4. Investigation of modified thin SnO2 layers treated by rapid thermal annealing by means of hollow cathode spectroscopy and AFM technique

    International Nuclear Information System (INIS)

    Djulgerova, R; Popova, L; Beshkov, G; Petrovic, Z Lju; Rakocevic, Z; Mihailov, V; Gencheva, V; Dohnalik, T

    2006-01-01

    By means of hollow cathode spectroscopy and atomic force microscopy the surface morphology and composition of SnO 2 thin film, modified with hexamethyldisilazane after rapid thermal annealing treatment (800-1200 deg. C), are investigated. Formation of crystalline structure is suggested at lower temperatures. Depolimerization, destruction and dehydration are developed at temperatures of 1200 deg. C. It is shown that the rapid thermal annealing treatment could modify both the surface morphology and the composition of the layer, thus changing the adsorption ability of the sensing layer. The results confirm the ability of hollow cathode emission spectroscopy for depth profiling of new materials especially combined with standard techniques

  5. Thermal diffusivity effect in opto-thermal skin measurements

    International Nuclear Information System (INIS)

    Xiao, P; Imhof, R E; Cui, Y; Ciortea, L I; Berg, E P

    2010-01-01

    We present our latest study on the thermal diffusivity effect in opto-thermal skin measurements. We discuss how thermal diffusivity affects the shape of opto-thermal signal, and how to measure thermal diffusivity in opto-thermal measurements of arbitrary sample surfaces. We also present a mathematical model for a thermally gradient material, and its corresponding opto-thermal signal. Finally, we show some of our latest experimental results of this thermal diffusivity effect study.

  6. Effects of optical interference and annealing on the performance of poly (3-hexylthiophene): fullerene based solar cells

    International Nuclear Information System (INIS)

    Hai-Long, You; Chun-Fu, Zhang

    2009-01-01

    In this paper, the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail. Due to the optical interference effect, short circuit current density (J SC ) shows obvious oscillatory behaviour with the variation of active layer thickness. With the help of the simulated results, the devices are optimized around the first two optical interference peaks. It is found that the optimized thicknesses are 80 and 208 nm. The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing. Based on post-annealing, different annealing temperatures are tested. The optimized annealing condition is 160° C for 10 min in a nitrogen atmosphere. The device shows that the open circuit voltage V OC achieves about 0.65V and the power conversion efficiency is as high as 4.0 % around the second interference peak

  7. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  8. Evolution of free volume in ultrasoft magnetic FeZrN films during thermal annealing

    NARCIS (Netherlands)

    Chechenin, NG; van Veen, A; Schut, H; Chezan, AR; Boerma, DO; Vystavel, T; De Hosson, JTM; DeHaven, PW; Field, DP; Harkness, SD; Sutliff, JA; Szpunar, JA; Tang, L; Thomson, T; Vaudin, MD

    2002-01-01

    The thermal stability of nanocrystalline ultra-soft magnetic (Fe98Zr2)(1-x)N-x films with x=0.10-0.25 was studied using high-resolution transmission electron microscopy (HRTEM), positron beam analysis (PBA) and thermal desorption spectrometry (TDS). The results demonstrate that grain growth during

  9. Characteristics of rapid-thermal-annealed LiCoO2 cathode film for an all-solid-state thin film microbattery

    International Nuclear Information System (INIS)

    Kim, Han-Ki; Yoon, Young Soo

    2004-01-01

    We report on the fabrication of a LiCoO 2 film for an all-solid-state thin film microbattery by using a rapid-thermal-annealing (RTA) process. The LiCoO 2 films were grown by rf magnetron sputtering using a synthesized LiCoO 2 target in a [O 2 /(Ar+O 2 )] ratio of 10%. Scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) analysis results showed that the surface layer on the as-deposited LiCoO 2 film was completely removed by rapid thermal annealing process in oxygen ambient for 20 min. In addition, the thin film microbattery fabricated with the annealed LiCoO 2 film shows fairly stable cyclability with a specific discharge capacity of 56.49 μAh/cm2 μm. These results show the possibility of the RTA LiCoO 2 film and rapid thermal annealing process being a promising cathode material and annealing process for thin film microbatteries, respectively

  10. Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

    2010-06-01

    Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

  11. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  12. Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.

    Science.gov (United States)

    Wang, Xiaodan; Estradé, Sonia; Lin, Yuanjing; Yu, Feng; Lopez-Conesa, Lluis; Zhou, Hao; Gurram, Sanjeev Kumar; Peiró, Francesca; Fan, Zhiyong; Shen, Hao; Schaefer, Lothar; Braeuer, Guenter; Waag, Andreas

    2017-12-01

    Recently, colored H-doped TiO 2 (H-TiO 2 ) has demonstrated enhanced photoelectrochemical (PEC) performance due to its unique crystalline core-disordered shell nanostructures and consequent enhanced conduction behaviors between the core-shell homo-interfaces. Although various hydrogenation approaches to obtain H-TiO 2 have been developed, such as high temperature hydrogen furnace tube annealing, high pressure hydrogen annealing, hydrogen-plasma assisted reaction, aluminum reduction and electrochemical reduction etc., there is still a lack of a hydrogenation approach in a controlled manner where all processing parameters (temperature, time and hydrogen flux) were precisely controlled in order to improve the PEC performance of H-TiO 2 and understand the physical insight of enhanced PEC performance. Here, we report for the first time a controlled and local rapid thermal annealing (RTA) approach to prepare hydrogenated core-shell H-TiO 2 nanorods grown on F:SnO 2 (FTO) substrate in order to address the degradation issue of FTO in the typical TiO 2 nanorods/FTO system observed in the conventional non-RTA treated approaches. Without the FTO degradation in the RTA approach, we systematically studied the intrinsic relationship between the annealing temperature, structural, optical, and photoelectrochemical properties in order to understand the role of the disordered shell on the improved photoelectrochemical behavior of H-TiO 2 nanorods. Our investigation shows that the improvement of PEC performance could be attributed to (i) band gap narrowing from 3.0 to 2.9 eV; (ii) improved optical absorption in the visible range induced by the three-dimensional (3D) morphology and rough surface of the disordered shell; (iii) increased proper donor density; (iv) enhanced electron-hole separation and injection efficiency due to the formation of disordered shell after hydrogenation. The RTA approach developed here can be used as a suitable hydrogenation process for TiO 2 nanorods

  13. Enhancement Performance of Hybrid Membrane Zeolite/PES for Produced Water Treatment With Membrane Modification Using Combination of Ulta Violet Irradiation, Composition of Zeolite and Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Djoko Kusworo Tutuk

    2018-01-01

    Full Text Available Produced water is a wastewater from oil production that must be treated well. Membrane is one alternative of water treatments technology based on filtration method. However, in the use of membrane, there’s no exact optimal variable that influences membrane performance.This underlying research to assess factors that influences membrane performance to obtain optimal condition. Therefore, the objectives of this study are determining the effect of variable process in membrane fabrication and several modification techniques on membrane performance. The membranes were fabricated via dry-wet phase inversion method. The process variables of this experiment are varying the Zeolite concentration by low level 1% weight and 3% weight, UV irradiation time low level 2 minutes and high level 6 minutes, thermal annealing temperature low level 160°C and high level 180°C. The experiment runs were designed using central composite design. From the research that has been perfromed, PES/Zeolit membrane has a higher permeability after being irradiated by UV light and denser pore after heating and the longer of annealing time.

  14. Neutron scattering studies of the phase-transitions of ices by thermal-annealing

    International Nuclear Information System (INIS)

    Wang, Y.; Kolesnikov, A.; Li, J.C.

    1999-01-01

    Complete text of publication follows. Inelastic incoherent neutron scattering was used to study the phase-transition process of high-density amorphous (hda) ice produced by pressurising ice-Ih at 16 kbar and 77 K to low-density amorphous (Ida) ice, ice-Ic and ice-Ih by thermobaric treatments. The results show that when annealing temperature is lower than 136 K no obvious phase-transition was observed and transformation of the hda to the lda ice occurs between 136 and 144 K which is very closed to the theoretically calculated value 135 K (1). Comparing the lda spectrum with the vapour deposited low-density amorphous ice (2) shows a number of differences in the translational and vibrational regions, such as the low energy cut off of the vibrational band. On the other hand, the recovered lda from the hda ice has a similar spectrum as ice-Ih. (author)

  15. Structural Reorganization of CNC in Injection-Molded CNC/PBAT Materials under Thermal Annealing.

    Science.gov (United States)

    Mariano, Marcos; El Kissi, Nadia; Dufresne, Alain

    2016-10-04

    Composite materials were prepared by extrusion and injection molding from polybutyrate adipate terephthalate (PBAT) and high aspect ratio cellulose nanocrystals (CNCs) extracted from capim dourado fibers. Three CNC contents were used, corresponding to 0.5, 1, and 2 times the theoretical percolation threshold. Small-amplitude oscillary shear (SAOS) experiments show that as the CNC content increases, a more elastic behavior is observed but no percolating network can form within the polymeric matrix as a result of the high shear rates involved during the injection-molding process. Annealing of the samples at 170 °C was performed, and the possible reorganization of the nanofiller was investigated. This reorganization was further elucidated using 2D-SAOS and creep experiments.

  16. The fraction of substitutional boron in silicon during ion implantation and thermal annealing

    International Nuclear Information System (INIS)

    Caturla, M.J.; Johnson, M.D.; Diaz de la Rubia, T.

    1998-01-01

    We present results from a kinetic Monte Carlo simulation of boron transient enhanced diffusion (TED) in silicon. Our approach avoids the use of phenomenological fits to experimental data by using a complete and self-consistent set of values for defect and dopant energetics derived mostly from ab initio calculations. The results predict that, during annealing of 40 keV B-implanted Si at 800 degree C, there exists a time window during which all the implanted boron atoms are substitutional. At earlier or later times, the interactions between free silicon self-interstitials and boron atoms drive the growth of boron clusters and result in an inactive boron fraction. The results show that the majority of boron TED takes place during the growth period of interstitial clusters and not during their dissolution. copyright 1998 American Institute of Physics

  17. Structural relaxation dynamics and annealing effects of sodium silicate glass.

    Science.gov (United States)

    Naji, Mohamed; Piazza, Francesco; Guimbretière, Guillaume; Canizarès, Aurélien; Vaills, Yann

    2013-05-09

    Here we report high-precision measurements of structural relaxation dynamics in the glass transition range at the intermediate and short length scale for a strong sodium silicate glass during long annealing times. We evidence for the first time the heterogeneous dynamics at the intermediate range order by probing the acoustic longitudinal frequency in the GHz region by Brillouin light scattering spectroscopy. Or, from in-situ Raman measurements, we show that relaxation is indeed homogeneous at the interatomic length scale. Our results show that the dynamics at the intermediate range order contains two distinct relaxation time scales, a fast and a slow component, differing by about a 10-fold factor below Tg and approaching to one another past the glass transition. The slow relaxation time agrees with the shear relaxation time, proving that Si-O bond breaking constitutes the primary control of structural relaxation at the intermediate range order.

  18. Rapid thermal annealing of Ti-rich TiNi thin films: A new approach to fabricate patterned shape memory thin films

    International Nuclear Information System (INIS)

    Motemani, Y.; Tan, M.J.; White, T.J.; Huang, W.M.

    2011-01-01

    This paper reports the rapid thermal annealing (RTA) of Ti-rich TiNi thin films, synthesized by the co-sputtering of TiNi and Ti targets. Long-range order of aperiodic alloy could be achieved in a few seconds with the optimum temperature of 773 K. Longer annealing (773 K/240 s), transformed the film to a poorly ordered vitreous phase, suggesting a novel method for solid state amorphization. Reitveld refinement analyses showed significant differences in structural parameters of the films crystallized by rapid and conventional thermal annealing. Dependence of the elastic modulus on the valence electron density (VED) of the crystallized films was studied. It is suggested that RTA provides a new approach to fabricate patterned shape memory thin films.

  19. Effect of Anneal temperature and Time on Change of Texture and Hardness of Al-Cu-Mg

    International Nuclear Information System (INIS)

    Masrukan; Adolf Asih, S.

    2000-01-01

    Observation of the effect of annealing temperature to its texture and hardness of the Al-Cu-Mg has been done. In this experiments aluminium alloy powder and 5 pieces cubes of this alloy with size of 8 x 8 x 8 mm 3 were used. The powder was not annealed, 2 pieces cube were annealed for 20 hours at temperatures of 200 o C and 300 o respectively, finally 3 pieces cube were annealed at temperature of 400 o C. Texture measurement was done using x-ray diffraction with wave length of 1.78892 A using inverse pole figure method. The hardness testing results at constant temperature of 400 o C and various time indicated that the hardness values are decreased with increasing annealed time. Also, at hardness testing for constant time and various annealing temperatures indicated that the hardness values decreased with increasing annealing temperature

  20. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  1. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  2. Effects of annealing on the microstructure and magnetic property of the mechanically alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Xiaoxia; Zhou, Xuan; Yu, Shuaishuai; Wei, Congcong; Xu, Jing; Wang, Yan, E-mail: mse_wangy@ujn.edu.cn

    2017-05-15

    The effects of annealing treatment on the microstructure, thermal stability, and magnetic properties of the mechanical alloyed FeSiBAlNiM (M=Co, Cu, Ag) amorphous high entropy alloys (HEAs) have been investigated in this project. The simple crystallization products in FeSiBAlNi amorphous HEAs with Co and Ag addition reveal the high phase stability during heating process. At high annealing treatment, the crystallized HEAs possess the good semi-hard magnetic property. It can conclude that crystallization products containing proper FeSi-rich and FeB-rich phases are beneficial to improve the magnetic property. Annealing near the exothermic peak temperature presents the best enhancing effect on the semi-hard magnetic property of FeSiBAlNiCo. It performs both large saturated magnetization and remanence ratio of 13.0 emu/g and near 45%, which exhibit 465% and 105% enhancement compared with as-milled state, respectively. - Highlights: • Co, Cu, Ag additions affect crystallization behavior of FeSiBAlNi amorphous HEAs. • Crystallization products in FeSiBAlNi Co/Ag reveal high phase stability. • Proper FeSi-rich and FeB-rich phases are beneficial to improve magnetic property. • Annealing treatment improves semi-hard magnetic property compared to as-milled state. • Annealing near exothermic peak temperature shows best enhancing effect on magnetism.

  3. Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

    2015-11-02

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

  4. Effect of stress relief annealing temperature and atmosphere on the magnetic properties of silicon steel

    International Nuclear Information System (INIS)

    Paolinelli, Sebastiao C.; Cunha, Marco A. da

    2006-01-01

    Fully processed non-oriented silicon steel samples 0.50 mm thick were sheared and submitted to stress relief annealing under different conditions of temperature and atmosphere to investigate the effect of this treatment on the recovery of magnetic properties. Two different compositions were used, with different Si and Al contents. Temperature was varied in the range of 600-900 deg. C and four atmospheres were used: N 2 and N 2 +10%H 2 combined with dew points of -10 and 15 deg. C. The results showed that annealing atmosphere has very important effect on the magnetic properties and that the beneficial effect of stress relief annealing can be overcome by the detrimental effect of the atmosphere under certain conditions, due to oxidation and nitration

  5. Enhancement of electron transfer from CdSe core/shell quantum dots to TiO2 films by thermal annealing

    International Nuclear Information System (INIS)

    Shao, Cong; Meng, Xiangdong; Jing, Pengtao; Sun, Mingye; Zhao, Jialong; Li, Haibo

    2013-01-01

    We demonstrated the enhancement of electron transfer from CdSe/ZnS core/shell quantum dots (QDs) to TiO 2 films via thermal annealing by means of steady-state and time-resolved photoluminescence (PL) spectroscopy. The significant decrease in PL intensities and lifetimes of the QDs on TiO 2 films was clearly observed after thermal annealing at temperature ranging from 100 °C to 300 °C. The obtained rates of electron transfer from CdSe core/shell QDs with red, yellow, and green emissions to TiO 2 films were significantly enhanced from several times to an order of magnitude (from ∼10 7 s −1 to ∼10 8 s −1 ). The improvement in efficiencies of electron transfer in the TiO 2 /CdSe QD systems was also confirmed. The enhancement could be considered to result from the thermal annealing reduced distance between CdSe QDs and TiO 2 films. The experimental results revealed that thermal annealing would play an important role on improving performances of QD based optoelectronic devices. -- Highlights: • Annealing-induced enhancement of electron transfer from CdSe to TiO 2 is reported. • CdSe QDs on TiO 2 and SiO 2 films are annealed at various temperatures. • Steady-state and time-resolved PL spectroscopy of CdSe QDs is studied. • The enhancement is related to the reduced distance between CdSe QDs and TiO 2

  6. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Xu, Shuyan; Ma, Xinxin; Wen, Huiying; Tang, Guangze; Li, Chunwei

    2014-01-01

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15

  7. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shuyan, E-mail: xsynefu@126.com [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Ma, Xinxin [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, Huiying [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Tang, Guangze [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Chunwei [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China)

    2014-09-15

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15.

  8. High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

    2006-01-01

    High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

  9. Reflectance improvement by thermal annealing of sputtered Ag/ZnO back reflectors in a-Si:H thin film silicon solar cells

    DEFF Research Database (Denmark)

    Haug, Franz-Josef; Söderström, Karin; Pahud, Céline

    2011-01-01

    Silver can be used as the back contact and reflector in thin film silicon solar cells. When deposited on textured substrates, silver films often exhibit reduced reflectance due to absorption losses by the excitation of surface plasmon resonances. We show that thermal annealing of the silver back...

  10. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

    International Nuclear Information System (INIS)

    Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

    1979-01-01

    Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

  11. Effect of reversion annealing on the formation of nano/ultrafine grained structure in 201 austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Moallemi, Mohammad; Najafizadeh, Abbas; Kermanpur, Ahmad [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Rezaee, Ahad, E-mail: a.rezaee@ma.iut.ac.ir [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The secondary increase in the martensite content after reversion annealing. Black-Right-Pointing-Pointer Formation of thermally induced martensite due to carbide precipitation. Black-Right-Pointing-Pointer The smallest average grain size of 70 nm is achieved by annealing at 850 Degree-Sign C for 15 s. Black-Right-Pointing-Pointer A fully austenitic structure with grain size of 100 nm and 1370 MPa yield strength. - Abstract: The formation of nano/ultrafine grain structure in a 201 austenitic stainless steel was investigated by the martensite thermomechanical treatment. Cast ingots were first homogenized, then hot-forged and solution-annealed to reduce the initial grain size. Cold rolling was then conducted down to 90% reduction in thickness, followed by reversion annealing at a temperature in the range of 1023-1173 K for 15-1800 s. The effect of reversion parameters on grain refinement was investigated. The resulting microstructures were characterized by a scanning electron microscopy equipped with X-ray energy-dispersive spectrometer, an X-ray diffractometer and a Feritscope. The hardness was measured by the Vickers method. The results show that a nano/ultrafine-grained structure formed in the initial stages of the reversion, but significant grain growth took place during the entire course of reversion. Initially lowered, the volume fraction of martensite increased again during the reversion treatment due to carbide precipitation. A fully austenitic nano grained 201 stainless steel with the average grain size of 100 nm was produced, possessing a yield strength of about 1370 MPa.

  12. Hydration-annealing of chemical radiation damage in calcium nitrate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; James, C.

    1984-01-01

    The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

  13. NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

    International Nuclear Information System (INIS)

    Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kanda, Kazuhiro; Matsui, Shinji; Kometani, Reo

    2007-01-01

    Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from ≅2.2% of the as-deposited FIB-CVD DLC to ≅1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C

  14. Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness.

    Science.gov (United States)

    Ayyıldız, Simel; Soylu, Elif Hilal; Ide, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

    2013-11-01

    The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments.

  15. Reversible p-type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mannam, Ramanjaneyulu, E-mail: ramu.nov9@gmail.com [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India); Kumar, E. Senthil [SRM Research Institute, Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India); DasGupta, Nandita [Microelectronics and MEMS Laboratory, Electrical Engineering Department, Indian Institute of Technology Madras, Chennai 600036 (India); Ramachandra Rao, M.S., E-mail: msrrao@iitm.ac.in [Department of Physics, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036 (India)

    2017-04-01

    Highlights: • Electrical transport measurements revel that the (P, N) codoped ZnO thin films exhibited change in conductivity from p-type to n-type over a span of 120 days. • Hydrogen and carbon are found to be the main unintentional impurities in n-type (P, N) codoped ZnO thin films. • Rapid thermal annealing has been used to remove both H and C from the films. • Carbon can be removed at an annealing temperature of 600 °C, whereas, the dissociation of N−H complex takes place only at 800 °C. • The n-type (P, N) codoped ZnO thin film exhibited change in conductivity to p-type at an annealing temperature of 800 °C. - Abstract: We demonstrate reversible p-type nature of pulsed laser deposited (P, N) codoped ZnO thin films using rapid thermal annealing process. As grown thin films exhibited change in conductivity from p to n-type over a span of 120 days. Non-annealed n-type thin films contain unintentional donor impurities such as hydrogen and carbon. X-ray photoelectron spectroscopy and Raman measurements conclusively show that hydrogen passivates nitrogen acceptors by forming N−H complex. Carbon can be annealed out at 600 °C, whereas, the dissociation of N−H complex takes place at 800 °C. The films revert its p-type nature at an annealing temperature of 800 °C.

  16. Novel thermal donors generated in Cz silicon by prolonged annealing at 470oC

    International Nuclear Information System (INIS)

    Kamiura, Y.; Hashimoto, F.; Yoneta, M.

    1989-01-01

    A new family of shallower double donors (New TD's) than the normal family of thermal donors (TD's) currently studied has been discovered by DLTS (Deep Level Transient Spectroscopy) and Hall measurements. The both families exhibit qualitatively the same kinetic behaviors at 470 o C, but New TD's have smaller generation rates and higher thermal stability, correlating strongly with the NL10 EPR center. The hypothesis that an unknown nucleus involved in the core of New TD's plays an essential role in lowering their level ionization energies and stabilizing their donor activity is proposed to explain the results. (author) 11 refs., 6 figs

  17. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  18. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  19. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  20. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

    Directory of Open Access Journals (Sweden)

    Hans F. Wardenga

    2015-02-01

    Full Text Available Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS and ex situ by X-ray diffraction (XRD, optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

  1. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    Energy Technology Data Exchange (ETDEWEB)

    Touihri, S., E-mail: s_touihri@yahoo.fr [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Arfaoui, A.; Tarchouna, Y. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Labidi, A. [Laboratoire Matériaux, Molécules et Applications, IPEST, BP 51 La Marsa 2070, Tunis (Tunisia); Amlouk, M. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Bernede, J.C. [LUNAM, Universite de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la houssiniere, BP 92208, Nantes F-44322 (France)

    2017-02-01

    Highlights: • Thermally grown molybdenum oxide films are amorphous, oxygen deficient and gas sensing. • Air or vacuum annealing transforms them into a sub-stoichiometric MoO{sub 3−x} phase. • The samples annealed at 500 °C in oxygen were crystallized and identified as pure orthorhombic MoO{sub 3} phase. • The conduction process and sensing mechanism of MoO{sub 3-x} to ethanol have been studied. - Abstract: This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoO{sub x} properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  2. Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Belayachi, A.; Heiser, T.; Schunck, J.P.; Bourdais, S.; Bloechl, P.; Huber, A.; Kempf, A

    2003-09-15

    The transient ion drift (TID) technique has been recently proposed for copper trace detection in silicon. Cu atoms may be present either in the vicinity of the Si surface or within the volume. In the latter case they are either gathered at secondary defects or form precipitates believed to be silicides. In order to become detectable by TID Cu atoms must be put into the highly mobile interstitial state. Depending on the initial configuration of the Cu/Si system different physical mechanisms may enable Cu atoms to become 'TID active'. In this work we study the Cu activation process using rapid thermal processing (RTP) in an attempt to minimise the thermal budget required to achieve a complete activation. Both, surface and volume contaminated samples are investigated. During RTP treatments the activation of surface Cu atoms is found to proceed significantly faster than during standard furnace anneal. We tentatively attribute this behaviour to the UV light exposure associated with the RTP, which may enhance the release of copper atoms from the surface. The dissolution kinetics of the Cu precipitates occurring during RTPs are found to be only limited by Cu diffusion. The RTP/TID process is used to study the low temperature reaction path of supersaturated Cu. If prior to the RTP process, Cu atoms are chemically removed from the surface or near surface region, TID measures only the residual bulk Cu atoms. Our results show that out-diffusion and near-surface precipitation are reducing mostly the copper supersaturation.

  3. The Effect of Annealing on the Elastic Modulus of Orthodontic Wires

    Science.gov (United States)

    Higginbottom, Kyle

    Introduction: Nickel Titanium orthodontic wires are currently used in orthodontic treatment due to their heat activated properties and their delivery of constant force. The objective of this study was to determine the effect of annealing on the elastic modulus of Nickel Titanium, Stainless Steel and Beta-titanium (TMA) wires. Different points along the wire were tested in order to determine how far from the annealed ends the elastic modulus of the wires was affected. Methods: Eighty (80) orthodontic wires consisting of 4 equal groups (SS/TMA/Classic NitinolRTM/Super Elastic NitinolRTM) were used as the specimens for this study. All wires were measured and marked at 5mm measurements, and cut into 33.00mm sections. The wires were heated with a butane torch until the first 13.00mm of the wires were red hot. Load deflection tests using an InstronRTM universal testing machine were run at 5mm distances from the end of the wire that had been annealed. The change in elastic modulus was then determined. Results: There was a significant difference (F = 533.001, p = 0.0005) in the change in elastic modulus for the four distances. There was also a significant difference (F = 57.571, p = 0.0005) in the change in elastic modulus for the four wire types. There was a significant interaction (F = 19.601, p = 0.005) between wire type and distance, however this interaction negated the differences between the wires. Conclusion: 1) There are significant differences in the changes in elastic modulus between the areas of the wires within the annealed section and those areas 5mm and 10mm away from the annealed section. The change in elastic modulus within the annealed section was significantly greater at 8 mm than it was at 13mm, and this was significantly greater than 18mm and 23mm (5mm and 10mm beyond the annealed section). However, there was no statistical difference in the change in elastic modulus between 5mm and 10mm away from the annealed section (18mm and 23mm respectively). 2

  4. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  5. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  6. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  7. Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge

    International Nuclear Information System (INIS)

    Ramos-Rivera, L.; Escobar, D.; Benavides-Palacios, V.; Arango, P.J.; Restrepo-Parra, E.

    2012-01-01

    In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500 °C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25 Pa and the discharge was performed at 310 V. The TiC layer was grown in a methane atmosphere at 30 Pa and 270 V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400 °C, TiO 2 phase begun to appear and it was well observed at 500 °C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases.

  8. Effect of pre-annealing on NO32- centers in synthetic hydroxyapatite

    International Nuclear Information System (INIS)

    Nosenko, V.V.; Vorona, I.P.; Ishchenko, S.S.; Baran, N.P.; Zatovsky, I.V.; Gorodilova, N.A.; Povarchuk, V.Yu.

    2012-01-01

    Effect of pre-annealing of synthetic hydroxyapatite (HAP) on properties of γ- and UV- induced NO 3 2- centers was studied by electron paramagnetic resonance (EPR). Nitrate-containing hydroxyapatite powders ((N)HAP)) and the powders with an admixture of carbonate and nitrate ions ((C,N)HAP) were annealed in the temperature range T ann = 20 °C − 600 °C before irradiation. It was found that pre-annealing of (N)HAP samples changes the parameters of NO 3 2- centers while no changes took place in (C,N)HAP. Moreover, at the pre-annealing temperatures T ann > 200 °C two new NO 3 2- centers were observed in (N)HAP samples; they are characterized by larger value of A ⊥ (3.67 and 4.41 mT) as compared to the known centers. It was also found that the dependence of NO 3 2- centers amount on T ann is non-monotonous in both types of samples. Presumably this is caused by the escape of water molecules from HAP during the annealing and essential modification of the defect subsystem of HAP.

  9. Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sihui Hou

    2018-03-01

    Full Text Available Nitrogen dioxide (NO2 sensors based on organic thin-film transistors (OTFTs were fabricated by conventional annealing (horizontal and vertical annealing processes of organic semiconductor (OSC films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl-pentacene (TIPS-pentacene films were characterized by atomic force microscopy (AFM in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.

  10. Si diffusion in compositional disordering of Si-implanted GaAs/AlGaAs superlattices induced by rapid thermal annealing

    International Nuclear Information System (INIS)

    Uematsu, Masashi; Yanagawa, Fumihiko

    1988-01-01

    The Si diffusion in Si-implanted GaAs/Al 0.5 Ga 0.5 As superlattices intermixed in the disrodering process induced by rapid thermal annealing (RTA), is investigated by means of secondary ion mass spectroscopy (SIMS). The SIMS profiles indicate that no fast Si diffusion occurs during the disordering, and the disordering occurs when the Si concentration exceeds 1 x 10 19 cm -3 , which is about three times larger than the threshold value for the disordering by furnace annealing (FA). The number of Si atoms which are allowed to pass through the heterointerface is considered to be essential for disordering. (author)

  11. Effect of water vapor on annealing scale formation on 316 SS

    International Nuclear Information System (INIS)

    Cheng, S.-Y.; Kuan, S.-L.; Tsai, W.-T.

    2006-01-01

    The oxidation behavior of 316 stainless steel (SS) annealed in air containing 0.1 atm water vapor at temperatures ranging from 800 to 1030 deg. C was investigated. A kinetic study of the oxidation was made by employing thermal-gravimetric analysis (TGA). The morphology, composition and structure of the scale were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The experimental results showed that significant breakaway oxidation occurred, resulting in substantial weight increase, as the steel was annealed in moist air at temperatures above 950 deg. C. The scaling behavior of 316 SS in wet air at 1030 deg. C could be divided into two stages based on the a