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Sample records for teutonic deity inn

  1. The capture of the Marienwerder Castle, or where the Teutonic Order’s expansion to the East was stopped

    OpenAIRE

    Vytenis Almonaitis

    2017-01-01

    The capture of the Marienwerder Castle, or where the Teutonic Order’s expansion to the East was stopped This paper analyzes the construction, features, and significance of the Marienwerder castle, and its capture by Lithuanian forces in 1384. Located in what is now Kaunas, the castle represented the furthest eastern point of the Teutonic Order’s penetration into the Grand Duchy of Lithuania. As the sparse historiography on it suggests, the event seems to have been overlooked by contempora...

  2. The enhancement of visuospatial processing efficiency through Buddhist Deity meditation.

    Science.gov (United States)

    Kozhevnikov, Maria; Louchakova, Olga; Josipovic, Zoran; Motes, Michael A

    2009-05-01

    This study examined the effects of meditation on mental imagery, evaluating Buddhist monks' reports concerning their extraordinary imagery skills. Practitioners of Buddhist meditation were divided into two groups according to their preferred meditation style: Deity Yoga (focused attention on an internal visual image) or Open Presence (evenly distributed attention, not directed to any particular object). Both groups of meditators completed computerized mental-imagery tasks before and after meditation. Their performance was compared with that of control groups, who either rested or performed other visuospatial tasks between testing sessions. The results indicate that all the groups performed at the same baseline level, but after meditation, Deity Yoga practitioners demonstrated a dramatic increase in performance on imagery tasks compared with the other groups. The results suggest that Deity meditation specifically trains one's capacity to access heightened visuospatial processing resources, rather than generally improving visuospatial imagery abilities.

  3. Ischiopagus and diprosopus in India: two pairs of conjoined twins perceived as incarnations of Hindu deities.

    Science.gov (United States)

    Tubbs, R Shane; Ditty, Benjamin; Bosmia, Anand N; Bosmia, Arpan N

    2015-02-01

    This article briefly reviews two specific types of conjoined twins, ischiopagus and diprosopus, and discusses recent cases of such twins born in India. Some members of the Hindu community worshiped these conjoined twins as incarnations of Hindu deities. In discussing this phenomenon, the authors aim to elucidate certain features of the faith tradition of Hinduism itself. The reception of these conjoined twins as incarnations of Hindu deities can be understood by examining two salient features of Hindu polytheism: the pictorial depiction of Hindu deities with multiple appendages and the concept of an incarnation, or avatar, of a Hindu deity.

  4. AHP 35: An Abandoned Mountain Deity

    Directory of Open Access Journals (Sweden)

    Limusishiden (Li Dechun 李得春

    2015-02-01

    Full Text Available Lasizi are cairns where mountain deities dwell, and the same word also refers to the deities that dwell in these cairns. There are many lasizi in Tu areas in Huzhu Tu Autonomous County, Haidong Municipality, Qinghai Province. The most famous are: Chileb, located in the north part of both Danma Town and Donggou Township Durizang, located in the northern part of Wushi Town Lawa, located atop a mountain on the border between Danma Town and Wushi Town. The mountain is referred to as Lawa Lasizi. Lawa Village is located at the foot of Lawa Lasizi's west side, which is within Danma Town territory. Tughuan Village is located at the foot of Lawa Lasizi's east side, which belongs is within Wushi Town jurisdiction. Sughua, located atop a mountain on the border between Danma Town and Dongshan Township. The mountain is locally known as Sughua Lasizi. Qighaan Dawa Village is located at the foot of Sughua Lasizi's west side, which is part of Dongshan Township. Sughua Village is located at the foot of Sughua Lasizi's east side, which is part of belongs Danma Town. Walighuan, located atop a mountain in Hongyazigou Township and Sunduu, located on the border between Songduo and Bazha (two autonomous Tibetan townships in Huzhu County and Ledu Region. ...

  5. High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE

    International Nuclear Information System (INIS)

    Muto, D.; Araki, T.; Kitagawa, S.; Kurouchi, M.; Nanishi, Y.; Naoi, H.; Na, H.

    2006-01-01

    We have succeeded in dramatically decreasing the density of dislocations in InN by regrowing InN films on micro-facetted N-polar InN templates. The micro-facetted N-polar InN templates were formed by wet etching in a 10 mol/l KOH solution. InN films were regrown on the micro-facetted N-polar InN templates and on flat surface N-polar InN templates for comparison by radio-frequency plasma-assisted molecular beam epitaxy. InN regrown on micro-facetted InN had considerably smaller twist distribution than that grown on the flat InN templates. From transmission electron microscopy observation, it was confirmed that the InN grown on the micro-facetted InN template had much lower density of dislocations than that grown on the flat InN template, and moreover the propagation of edge dislocations was almost completely terminated at the interface between the regrown InN and the micro-facetted InN template. Based on the results, we propose that regrowth of InN on micro-facetted InN templates is an effective way to obtain high-quality InN films. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

    International Nuclear Information System (INIS)

    Chao, Nie; Rong, Zhang; Zi-Li, Xie; Xiang-Qiang, Xiu; Bin, Liu; De-Yi, Fu; Qi-Jia, Liu; Ping, Han; Shu-Lin, Gu; Yi, Shi; You-Dou, Zheng

    2008-01-01

    One-dimensional wurtzite InN nanowires and zincblende InN nanorods are prepared by chemical vapour deposition (CVD) method on natural cleavage plane (110) of GaAs. The growth direction of InN nanowires is [100], with wurtzite structure. The stable crystal structure of InN is wurtzite (w-InN), zincblende structure (z-InN) is only reported for 2D InN crystals before. However, in this work, the zincblende InN nanorods [011] are synthesized and characterized. The SEM and TEM images show that every nanorod shapes a conical tip, which can be explained by the anisotropy of growth process and the theory of Ehrlich–Schwoebel barrier. (condensed matter: structure, mechanical and thermal properties)

  7. The capture of the Marienwerder Castle, or where the Teutonic Order’s expansion to the East was stopped

    Directory of Open Access Journals (Sweden)

    Vytenis Almonaitis

    2017-12-01

    Full Text Available The capture of the Marienwerder Castle, or where the Teutonic Order’s expansion to the East was stopped This paper analyzes the construction, features, and significance of the Marienwerder castle, and its capture by Lithuanian forces in 1384. Located in what is now Kaunas, the castle represented the furthest eastern point of the Teutonic Order’s penetration into the Grand Duchy of Lithuania. As the sparse historiography on it suggests, the event seems to have been overlooked by contemporary historians. In fact, this castle of the Teutonic Order was not just an ordinary fortress, but a mighty stronghold. A detailed analysis of primary sources allows classifying the capture of Marienwerder as a major event in the war between the Order and the Grand Duchy of Lithuania as well as one of the major victories scored by the latter. It may be concluded that the Teutonic Order’s expansion to the east, which had been started from Torun, was then stopped at Kaunas.   Zajęcie zamku Marienwerder albo gdzie zakończyła się ekspansja zakonu krzyżackiego na wschód W artykule analizowane są budowa, znaczenie i zajęcie w 1384 r. zamku zakonu krzyżackiego Marienwerder, który mieścił się na terytorium miasta Kowna. Był to najbardziej wysunięty na wschód zamek krzyżacki, który najgłębiej wchodził w terytorium Wielkiego Księstwa Litewskiego. Skromna historiografia świadczy o tym, że został on zapomniany przez współczesnych historyków. A jednak mowa jest tu nie o zwykłej rezydencji zakonu, a o potężnej twierdzy. Szczegółowa analiza źródeł pierwotnych pozwala uważać zajęcie zamku Marienwerder za jedno z najważniejszych wydarzeń w wojnie między zakonem krzyżackim a Wielkim Księstwem Litewskim, jak również jednym z największych zwycięstw tego ostatniego. Można również twierdzić, że ekspansja zakonu na wschód, rozpoczęta od Torunia, zakończyła się na Kownie.

  8. InN layers grown by the HVPE

    International Nuclear Information System (INIS)

    Syrkin, A.L.; Ivantsov, V.; Usikov, A.; Dmitriev, V.A.; Chambard, G.; Ruterana, P.; Davydov, A.V.; Sundaresan, S.G.; Lutsenko, E.; Mudryi, A.V.; Readinger, E.D.; Chern-Metcalfe, G.D.; Wraback, M.

    2008-01-01

    We report on the properties of high quality HVPE InN and on successful subsequent MBE growth of InN layers with improved characteristics on HVPE InN template substrates. InN layers were grown by HVPE on GaN/sapphire HVPE templates. The (00.2) XRD rocking curve of the best InN layer (RC) had the FWHM of about 375 arc sec, being the narrowest XRD RCs ever reported for HVPE InN. Transmission Electron Microscopy (TEM) revealed that at the GaN/InN interface, the threading dislocations that come from GaN were transmitted into the InN layer. We estimated the dislocation density in HVPE grown InN to be in the low 10 9 cm -2 range. Reflection high energy electron diffraction (RHEED) confirmed monocrystalline structure of the InN layers surface. Layers photoluminescence (PL) showed edge emission around 0.8 eV. Hall measured free electron concentration was in the range of 10 19 -10 20 cm -3 and electron mobility was ∝200 cm 2 /V s. MBE growth of InN was performed on the HVPE grown InN template substrate demonstrating the improvement of material quality in the case of homo-epitaxial growth of InN. Demonstration of the high quality HVPE InN materials opens a new way for InN substrate development. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers

    International Nuclear Information System (INIS)

    Shikata, G.; Hirano, S.; Inoue, T.; Hijikata, Y.; Orihara, M.; Yaguchi, H.; Yoshida, S.

    2008-01-01

    We report on the improvement of the surface morphology of a-plane InN films grown by RF molecular beam epitaxy. By using low-temperature (LT) InN buffer layers, we could successfully obtain InN films with a smooth surface. The full width at half maximum values of the X-ray diffraction (11-20) rocking curve along the [0001]InN direction were 2870 arcsec and 3410 arcsec for a-plane InN samples grown at 500 C with and without LT-InN buffer layers, respectively. Thus, we could improve also the crystalline quality of a-plane InN films by using LT-InN buffer layers. We observed strong polarization anisotropy in the photoluminescence spectra of a-plane InN, which is typical of nonpolar wurtzite III-nitride films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Mg doped InN and confirmation of free holes in InN

    International Nuclear Information System (INIS)

    Wang, K.; Yamaguchi, T.; Miller, N.; Mayer, M. A.; Haller, E. E.; Iwamoto, R.; Araki, T.; Nanishi, Y.; Yu, K. M.; Walukiewicz, W.; Ager, J. W. III

    2011-01-01

    We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined with thermopower measurements find p-type conduction over an Mg concentration range. For InN:Mg in this p-type 'window' the Seebeck coefficients dramatically change their signs from negative to positive when the thickness of undoped InN interlayer decreases to zero. This notable sign change of Seebeck coefficient explains the previous inconsistency between ECV and thermopower results and confirms the existence of mobile holes in the InN:Mg. Taking into account the undoped InN interlayer, the hole density and mobility are extracted.

  11. Growth and characterizations of semipolar (1122) InN

    International Nuclear Information System (INIS)

    Dinh, Duc V.; Skuridina, D.; Solopow, S.; Frentrup, M.; Pristovsek, M.; Vogt, P.; Kneissl, M.; Ivaldi, F.; Kret, S.; Szczepańska, A.

    2012-01-01

    We report on metal-organic vapor phase epitaxial growth of (1122) InN on (1122) GaN templates on m-plane (1010) sapphire substrates. The in-plane relationship of the (1122) InN samples is [1123] InN ‖‖[0001] sapphire and [1100] InN ‖‖[1210] sapphire , replicating the in-plane relationship of the (1122) GaN templates. The surface of the (1122) InN samples and the (1122) GaN templates shows an undulation along [1100] InN,GaN , which is attributed to anisotropic diffusion of indium/gallium atoms on the (1122) surfaces. The growth rate of the (1122) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (1122) InN layers and the (1122) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (1122) GaN templates but they were terminated at the InN/(1122) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (1122) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (1122) InN sample, indicating an In-polar (1122) InN. The valence band maximum was determined to be at (1.7 ± 0.1) eV for the (1122) InN sample, comparable to In-polar c-plane InN.

  12. A historical vignette. The imagination and medical nomenclature; Teutonic mythology as a presence in ENT and related fields.

    Science.gov (United States)

    Tainmont, J

    2008-01-01

    The imagination is one of the sources of inspiration for medical nomenclature, as can be seen when nomenclature reflects mythology. In this paper, we consider Teutonic (Scandinavian, Germanic) mythology as it appears in the field of minerals, in the field of hearing and in the field of respiration. As far as hearing is concerned, the author suggests naming "Heimdall's ear" physiological hyperacusis.

  13. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    International Nuclear Information System (INIS)

    Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

    2012-01-01

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  14. Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

    2012-01-31

    We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

  15. The Profile of Romanian Urban Inns

    Directory of Open Access Journals (Sweden)

    Monica Maria Coroș

    2016-11-01

    Full Text Available This paper is the third of a series of studies dedicated to tourist inns on the Romanian market. The previous papers focused on the identification of the tourist inns that currently function on the domestic market. Further, their potential as rural facilities was highlighted and their authenticity was discussed. The relevance of this research is linked to the fact that in the early 1990s tourist inns were excluded from the lists of lodging and food-serving facilities, ceasing to be officially ranked. Consequently, the inns’ owners were forced to reclassify as other accepted types or, even worse, to function in the shadow economy , without any official ranking. Moreover, the absence of inns on the market and the incoherent development of certain types of lodgings in Romania, have also led to the fact that entrepreneurs and tourists tend to be confused and, sometimes, not able to differentiate one type of accommodation unit from another. The main purpose of this research is to determine the extent to which urban inns can contribute to the authenticity of the Romanian tourism. From a methodological perspective, the paper relies on both official data (collected and processed based on the official Lists of Hospitality Facilities and on the information available on specialized websites. Thorough analyses have been run in order to identify the tourist structures pretending to be inns, to further categorize and discuss them according to various criteria. The main findings and conclusions of this paper reveal that inns have the potential to contribute to the authenticity of Romania’s hospitality industry .

  16. Suitable Assimilation Model of Culture, Beliefs and Rites Concerning Deities of Buddhism and Hindu-Brahmanism for Peace of Thai Society in Bangkok and Circumferences

    OpenAIRE

    Phra M.K. Kaewchaiya; Suoneth Photisan; Makhawin Purisuttamo

    2011-01-01

    Problem statement: At present, Thai society widely assimilates culture, beliefs and rites concerning deities of Buddhism and Hindu-Brahmanism by worshipping the deity images at the temples or the abodes of gods in Bangkok and circumferences. A typical worship is to pray the deity for help. As a matter of fact, people should help themselves first and use a prayer as willpower. The purpose of this research were these; (1) to investigate the background of culture, belief and rites concerning dei...

  17. Bandtail characteristics in InN thin films

    International Nuclear Information System (INIS)

    Shen, W.Z.; Jiang, L.F.; Yang, H.F.; Meng, F.Y.; Ogawa, H.; Guo, Q.X.

    2002-01-01

    The Urbach bandtail characteristics in InN thin films grown by radio-frequency magnetron sputtering on sapphire (0001) substrates have been investigated both theoretically and experimentally. The bandtail parameter in InN thin films has been obtained by temperature-dependent transmission spectra, with the aid of a detailed calculation of the transmission profile. A bandtail model based on the calculation of density of occupied states and the carrier-phonon interaction has been employed to analyze the temperature-dependent bandtail characteristics. The bandtail parameter is in the range of 90-120 meV in the InN thin film. It is found that the carrier-phonon interaction in InN is weak and the structural disorder contribution (∼90 meV) dominates over the interactive terms. The high structural disorder in InN thin films may relate to the high nonradiative recombination centers

  18. The Knight Brothers from the Low Countries in the Conflict between the Westphalians and the Rhinelanders in the Livonian Branch of the Teutonic Order

    NARCIS (Netherlands)

    Mol, J.A.

    2016-01-01

    In the fifeenth century the Livonian branch of the Teutonic Order was internally divided by a long-lasting conflict between two groups of knight brethren, the Westphalians and the Rhinelanders, who were united according to regional origin. They each strived to control the most important offces,

  19. Structural anisotropy of nonpolar and semipolar InN epitaxial layers

    Science.gov (United States)

    Darakchieva, V.; Xie, M.-Y.; Franco, N.; Giuliani, F.; Nunes, B.; Alves, E.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

    2010-10-01

    We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO2, respectively, and semipolar (101¯1) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

  20. Structural anisotropy of nonpolar and semipolar InN epitaxial layers

    International Nuclear Information System (INIS)

    Darakchieva, V.; Xie, M.-Y.; Franco, N.; Alves, E.; Giuliani, F.; Nunes, B.; Hsiao, C. L.; Chen, L. C.; Yamaguchi, T.; Takagi, Y.; Kawashima, K.; Nanishi, Y.

    2010-01-01

    We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a- and m-plane surface orientations on r-plane sapphire and (100) γ-LiAlO 2 , respectively, and semipolar (1011) InN grown on r-plane sapphire. The on-axis rocking curve (RC) widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN [0001] for the a-plane films, and maxima at InN [0001] for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN(111)A and InN(111)B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a- and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

  1. Superconductivity in MBE grown InN

    Energy Technology Data Exchange (ETDEWEB)

    Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, Colchester (United Kingdom); Tiras, E.; Ardali, S. [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir (Turkey); Ajagunna, A.O.; Iliopoulos, E.; Georgakilas, A. [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion, Crete (Greece)

    2011-05-15

    We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n{sub 3D}=1.185x10{sup 19} cm{sup -3}. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10{sup 19} cm{sup -3}, 1.38x10{sup 19} cm{sup -3}, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x10{sup 17} cm{sup -3}) and the superconductivity to metal transition (7x10{sup 20} cm{sup -3}). We believe that at lower temperatures ({sup 3}He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Structural and elastic properties of InN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Quddus, Ehtesham B.; Wilson, Alina; Liu, Jie; Cai, Zhihua; Veereddy, Deepak; Tao, Xinyong; Li, Xiaodong; Koley, Goutam [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Webb, Richard A. [Department of Physics and Astronomy and USC Nanocenter, University of South Carolina, Columbia, SC 29208 (United States)

    2012-04-15

    Structural and elastic properties of InN nanowires (NWs) have been investigated. It was observed that the NWs bend spontaneously or upon meeting an obstacle in their growth path at angles that are multiples of 30 . Lithographically patterned trenches and barriers were found to influence the growth direction of the NWs, which depending on the angle of incidence, grew along the barrier or got deflected from it. Young's modulus of InN NWs, measured by three point bending method using a NW suspended across a trench, was found to be 266 GPa, which is in between the moduli of bulk and thin film InN. Overall, the InN NW properties were found to be very suitable for applications in nanoelectromechanical systems (NEMS) and sensors. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Formation of InN phase by sequential ion implantation

    International Nuclear Information System (INIS)

    Santhana Raman, P.; Ravichandran, V.; Nair, K.G.M.; Kesavamoorthy, R.; Kalavathi, S.; Panigrahi, B.K.; Dhara, S.

    2006-01-01

    Formation of InN phase by sequentially implanting nitrogen on indium implanted silica was demonstrated. The growth of embedded InN phase on as-implanted and post-implantation annealed sample was studied using Glancing Incidence X-Ray Diffraction (GIXRD) and Raman spectroscopy. Existence of both cubic and hexagonal phases of InN was observed. Results of irradiation induced ripening of In nanoclusters due to N + ion implantation was also studied. (author)

  4. Improved theoretical model of InN optical properties

    International Nuclear Information System (INIS)

    Ferreira da Silva, A.; Chubaci, J.F.D.; Matsuoka, M.; Freitas, J.A. Jr.; Tischler, J.G.; Baldissera, G.; Persson, C.

    2014-01-01

    The optical properties of InN are investigated theoretically by employing the projector augmented wave (PAW) method within Green's function and the screened Coulomb interaction approximation (GW o ). The calculated results are compared to previously reported calculations which use local density approximation combined with the scissors-operator approximation. The results of the present calculation are compared with reported values of the InN bandgap and with low temperature near infrared luminescence measurements of InN films deposited by a modified Ion Beam Assisted Deposition technique. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Direct current magnetron sputtering deposition of InN thin films

    International Nuclear Information System (INIS)

    Cai Xingmin; Hao Yanqing; Zhang Dongping; Fan Ping

    2009-01-01

    In this paper, InN thin films were deposited on Si (1 0 0) and K9 glass by reactive direct current magnetron sputtering. The target was In metal with the purity of 99.999% and the gases were Ar (99.999%) and N 2 (99.999%). The properties of InN thin films were studied. Scanning electron microscopy (SEM) shows that the film surface is very rough and energy dispersive X-ray spectroscopy (EDX) shows that the film contains In, N and very little O. X-ray diffraction (XRD) and Raman scattering reveal that the film mainly contains hexagonal InN. The four-probe measurement shows that InN film is conductive. The transmission measurement demonstrates that the transmission of InN deposited on K9 glass is as low as 0.5% from 400 nm to 800 nm.

  6. Growth of InN films on spinel substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Mitamura, K. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Ohta, J.; Fujioka, H. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Megruro-ku, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Takatsu-ku, Kanagawa 213-0012 (Japan); Oshima, M. [Department of Applied Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2007-10-15

    We have grown InN films on MgAl{sub 2}O{sub 4}(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe{sub 2}O{sub 4}(111) substrates. It has been revealed that InN(0001) films grow on MgAl{sub 2}O{sub 4}(111) with an in-plane epitaxial relationship of InN[1 anti 100]//MgAl{sub 2}O{sub 4}[1 anti 10], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30 rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl{sub 2}O{sub 4} and those on (Mn,Zn)Fe{sub 2}O{sub 4} led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. SIMS and Raman studies of Mg-doped InN

    International Nuclear Information System (INIS)

    Davydov, V.Yu.; Kitaev, Yu.E.; Smirnov, A.N.; Lundina, E.Y.; Klochikhin, A.A.; Smirnov, M.B.; Lu, Hai; Schaff, William J.; Lee, H.M.; Lin, H.W.; Hong, Y.L.; Gwo, S.

    2008-01-01

    Raman and SIMS studies of Mg-doped InN films with a Mg content from N Mg =3.3 x 10 19 to 5.5 x 10 21 cm -3 are reported. Lattice dynamics of hexagonal InN with substitutional impurities and vacancies has been investigated theoretically and calculated Raman spectra were compared with experimental ones. It is concluded that Raman spectroscopy is a good tool for quantitative characterization of Mg-doped InN. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. InN: Fermi level stabilization by low-energy ion bombardment

    International Nuclear Information System (INIS)

    Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J.

    2006-01-01

    The near-surface electronic properties of InN have been investigated with high-resolution electron-energy loss spectroscopy. Low-energy (∝400 eV) nitrogen ion bombardment followed by low temperature annealing (<300 C) was found to dramatically increase the n-type conductivity of InN, close to the surface. This is explained in terms of the formation of amphoteric defects from the ion bombardment and annealing combined with the band structure of InN. Low-energy ion bombardment and annealing is shown to result in a damage-induced, donor-like defect-profile instead of the expected electron accumulation for InN. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Infrared reflectance measurement for InN thin film characterization

    International Nuclear Information System (INIS)

    Fukui, K.; Kugumiya, Y.; Nakagawa, N.; Yamamoto, A.

    2006-01-01

    Infrared reflectance measurements of a series of InN thin films have been performed and attempt to derive carrier concentration and other physical constants for InN thin film characterization. Fitting calculations are performed by use of the dielectric function equation based on phonon-plasmon coupling model. Longitudinal and transverse optical phonon frequencies, plasma frequency and their damping parameters can be derived from fitting. From those results, electrical and phonon properties of InN and characterization of films are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. InN Quantum Dot Based Infra-Red Photodetectors.

    Science.gov (United States)

    Shetty, Arjun; Kumar, Mahesh; Roull, Basanta; Vinoy, K J; Krupanidhj, S B

    2016-01-01

    Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.

  11. Anomalous phase transition of InN nanowires under high pressure

    International Nuclear Information System (INIS)

    Tang Shun-Xi; Zhu Hong-Yang; Jiang Jun-Ru; Wu Xiao-Xin; Dong Yun-Xuan; Zhang Jian; Cui Qi-Liang; Yang Da-Peng

    2015-01-01

    Uniform InN nanowires were studied under pressures up to 35.5 GPa by using in situ synchrotron radiation x-ray diffraction technique at room temperature. An anomalous phase transition behavior has been discovered. Contrary to the results in the literature, which indicated that InN undergoes a fully reversible phase transition from the wurtzite structure to the rocksalt type structure, the InN nanowires in this study unusually showed a partially irreversible phase transition. The released sample contained the metastable rocksalt phase as well as the starting wurtzite one. The experimental findings of this study also reveal the potentiality of high pressure techniques to synthesize InN nanomaterials with the metastable rocksalt type structure, in addition to the generally obtained zincblende type one. (paper)

  12. Evaluation of threading dislocation densities in In- and N-face InN

    International Nuclear Information System (INIS)

    Gallinat, C. S.; Koblmueller, G.; Wu, Feng; Speck, J. S.

    2010-01-01

    The threading dislocation (TD) structure and density has been studied in In- and N-face InN films grown on GaN by plasma-assisted molecular beam epitaxy. The TD densities were determined by nondestructive x-ray diffraction rocking curve measurements in on-axis symmetric and off-axis skew symmetric geometries and calibrated by transmission electron microscopy measurements. TD densities were dominated by edge-type TDs with screw-component TDs accounting for less than 10% of the total TD density. A significant decrease in edge-type TD density was observed for In-face InN films grown at increasingly higher substrate temperatures. In-face InN films grown with excess In exhibited lower TD densities compared to films grown under N-rich conditions. The edge-type TD density of N-face InN films was independent of substrate temperature due to the higher allowable growth temperatures for N-face InN compared to In-face InN. TD densities in In-face InN also showed a strong dependence on film thickness. Films grown at a thickness of less than 1 μm had higher TD densities compared with films grown thicker than 1 μm. The lowest measured TD density for an In-face InN film was ∼1.5x10 10 /cm 2 for 1 μm thick films.

  13. Effects of film polarities on InN growth by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xu, K.; Yoshikawa, A.

    2003-01-01

    Effects of the film polarity on InN growth were investigated in molecular-beam epitaxy (MBE). It was found that N-polarity InN could be grown at higher temperatures than In-polarity one. For the In-polarity films, which were grown on Ga-polar GaN template, the highest growth temperature was limited below 500 deg. C, and the surface morphology and crystal quality tended to be poor mainly because of the tolerated low growth temperature. While for the N-polarity InN films, which were grown on MBE-grown N-polar GaN, the growth temperature could be as high as 600 deg. C. The step-flow-like growth morphology was achieved for the InN films grown with N polarity at 580 deg. C. The resulting full widths of half maximum of x-ray rocking curve around InN (002) and (102) reflections were about 200-250 and 950-1100 arc sec, respectively. The photoluminescence of the InN films peaked at 0.697 eV. The recording Hall mobility of InN film grown in N polarity is 1400 cm 2 /V s with a background carrier concentration of 1.56x10 18 cm -3 at room temperature. For both-polarity films, we found N-rich condition was necessary for the stable InN growth

  14. Generation of InN nanocrystals in organic solution through laser ablation of high pressure chemical vapor deposition-grown InN thin film

    International Nuclear Information System (INIS)

    Alkis, Sabri; Alevli, Mustafa; Burzhuev, Salamat; Vural, Hüseyin Avni; Okyay, Ali Kemal; Ortaç, Bülend

    2012-01-01

    We report the synthesis of colloidal InN nanocrystals (InN-NCs) in organic solution through nanosecond pulsed laser ablation of high pressure chemical vapor deposition-grown InN thin film on GaN/sapphire template substrate. The size, the structural, the optical, and the chemical characteristics of InN-NCs demonstrate that the colloidal InN crystalline nanostructures in ethanol are synthesized with spherical shape within 5.9–25.3, 5.45–34.8, 3.24–36 nm particle-size distributions, increasing the pulse energy value. The colloidal InN-NCs solutions present strong absorption edge tailoring from NIR region to UV region.

  15. Convergence of valence bands for high thermoelectric performance for p-type InN

    International Nuclear Information System (INIS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-01-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  16. Two-dimensional electron gas in monolayer InN quantum wells

    International Nuclear Information System (INIS)

    Pan, W.; Wang, G. T.; Dimakis, E.; Moustakas, T. D.; Tsui, D. C.

    2014-01-01

    We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 × 10 15  cm −2 (or 1.25 × 10 14  cm −2 per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES

  17. Anomalous magnetism of superconducting Mg-doped InN film

    Directory of Open Access Journals (Sweden)

    P. H. Chang

    2016-02-01

    Full Text Available We report on the Meissner effect of Mg-doped InN film with superconducting transition onset temperature Tc,onset of 5 K. Mg-doped InN is magnetically ordered and exhibits a simultaneous first-order magnetic and electric transition near 50 K. Its behavior is similar to that of iron-based superconductors. A strong correlation is proposed to exist between structural distortion and superconductivity when Mg is doped into InN. The suppression of magnetic ordering close to Tc by doping is further demonstrated by anisotropic magnetoresistance and M-H measurements. The findings suggest that the superconducting mechanism in the system may not be conventional BCS.

  18. Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE

    International Nuclear Information System (INIS)

    Ri-Qing, Zhang; Xiang-Lin, Liu; Ting-Ting, Kang; Wei-Guo, Hu; Shao-Yan, Yang; Chun-Mei, Jiao; Qing-Sheng, Zhu

    2008-01-01

    We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films

  19. Molecular beam epitaxy of InN nanowires on Si

    Science.gov (United States)

    Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Laskar, Masihhur R.; May, Brelon J.; Myers, Roberto C.

    2015-10-01

    We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron microscopy, X-ray diffraction spectroscopy, energy dispersive X-ray spectroscopy, and photoluminescence are carried out to map out the variation in structural and optical properties versus growth conditions. Statistical averages of areal density, height, and radius are mapped as a function of substrate temperature and III/V ratio. Three different morphological phases are identified on the growth surface: InN, α-In and β-In. Based on SEM image analysis of samples grown at different conditions, the formation mechanism of these phases is proposed. Finally, the growth phase diagram of PAMBE grown InN on Si under N-rich condition is presented, and tapered versus non-tapered growth conditions are identified. It is found that high growth temperature and low III/V ratio plays a critical role in the growth of non-tapered InN nanowires.

  20. Growth of cubic InN on r-plane sapphire

    International Nuclear Information System (INIS)

    Cimalla, V.; Pezoldt, J.; Ecke, G.; Kosiba, R.; Ambacher, O.; Spiess, L.; Teichert, G.; Lu, H.; Schaff, W.J.

    2003-01-01

    InN has been grown directly on r-plane sapphire substrates by plasma-enhanced molecular-beam epitaxy. X-ray diffraction investigations have shown that the InN layers consist of a predominant zinc blende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase which content increases with proceeding growth. The lattice constant for zinc blende InN was found to be a=4.986 A. For this unusual growth of a metastable cubic phase on a noncubic substrate an epitaxial relationship was proposed where the metastable zinc blende phase grows directly on the r-plane sapphire while the wurtzite phase arises as the special case of twinning in the cubic structure

  1. InN{0001} polarity by ion scattering spectroscopy

    International Nuclear Information System (INIS)

    Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

    2005-01-01

    The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

    International Nuclear Information System (INIS)

    Miyajima, Takao; Kudo, Yoshihiro; Wakahara, Akihiro; Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi

    2006-01-01

    We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9±0.5 and n(In)=12.4±0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In 2 O 3 , and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In 2 O 3 , and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In 2 O 3 , which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Transport and mobility properties of wurtzite InN and GaN

    International Nuclear Information System (INIS)

    Yarar, Zeki

    2007-01-01

    The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material parameters of InN, therefore the recently reported and the traditionally accepted parameter values for InN are used in simulations and the results are compared. The steady-state and transient electron transport characteristics are analyzed and the valley populations of electrons are determined as a function of electric field. The low-field mobility of electrons is also obtained as a function of temperature and over a wide range of carrier concentrations. It is seen that with the recently published material parameters the peak velocity of carriers in InN increases significantly, while the field at which it is attained decreases. The calculated maximum low field mobility at 300 K in InN with the recent material parameters is about 10000 cm 2 /V s for low carrier concentrations. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Growth of M-plane (10-10)InN on LiAlO2(100) substrate

    International Nuclear Information System (INIS)

    Takagi, Yusuke; Muto, Daisuke; Araki, Tsutomu; Nanishi, Yasushi; Yamaguchi, Tomohiro

    2009-01-01

    In this study, we report the growth and characterization of M-plane InN films on LiAlO 2 (100) substrates by radio-frequency plasma assisted molecular beam epitaxy (RF-MBE). InN films were grown at various temperatures and under various V/III ratios on the substrates. Pure M -plane InN films were successfully grown at a high temperature of 450 C and under a slightly In-rich condition, while the incorporation of C-plane phase was observed in M -plane InN films grown at low temperatures of less than 400 C or under a N-rich condition. These indicate that controls of growth temperature and V/III ratio are important for the growth of pure M-plane InN films. The in-plane epitaxial relationships of M -plane InN on LiAlO 2 (100) were[0001] InN //[010] LiAlO 2 and[1-210] InN //[001] LiAlO 2 . A surface electron accumulation layer on the obtained M-plane InN film is also discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  6. Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia (Spain); Fundacio General de la Universitat de Valencia, Valencia (Spain); Iikawa, F. [Instituto de Fisica ' ' Gleb Wataghin' ' , UNICAMP, Campinas-SP (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

    2009-06-15

    InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Optical properties of InN nanocolumns: Electron accumulation at InN non-polar surfaces and dependence on the growth conditions

    International Nuclear Information System (INIS)

    Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-01-01

    InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present at the non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the density of free electrons can be somehow controlled by the growth parameters. It was observed that In-BEP and substrate temperature leading to shorter In diffusion lengths diminished the effects of the electron accumulation layer on the optical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. MBE-growth, characterization and properties of InN and InGaN

    International Nuclear Information System (INIS)

    Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

    2003-01-01

    Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. MBE-growth, characterization and properties of InN and InGaN

    Energy Technology Data Exchange (ETDEWEB)

    Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

    2003-11-01

    Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Structure and electronic properties of InN and In-rich group III-nitride alloys

    International Nuclear Information System (INIS)

    Walukiewicz, W; III, J W Ager; Yu, K M; Liliental-Weber, Z; Wu, J; Li, S X; Jones, R E; Denlinger, J D

    2006-01-01

    The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed. Recent advances in thin film growth have produced single crystal epitaxial layers of InN which are similar in structural quality to GaN films made under similar conditions and which can have electron concentrations below 1 x 10 18 cm -3 and mobilities exceeding 2000 cm 2 (Vs) -1 . Optical absorption, photoluminescence, photo-modulated reflectance and soft x-ray spectroscopy measurements were used to establish that the room temperature band gap of InN is 0.67 ± 0.05 eV. Experimental measurements of the electron effective mass in InN are presented and interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap. Energetic particle irradiation is shown to be an effective method to control the electron concentration, n, in undoped InN. Optical studies of irradiated InN reveal a large Burstein-Moss shift of the absorption edge with increasing n. Fundamental studies of the energy levels of defects in InN and of electron transport are also reviewed. Finally, the current experimental evidence for p-type activity in Mg-doped InN is evaluated. (topical review)

  11. InN grown by migration enhanced afterglow (MEAglow)

    International Nuclear Information System (INIS)

    Butcher, Kenneth Scott A.; Alexandrov, Dimiter; Terziyska, Penka; Georgiev, Vasil; Georgieva, Dimka; Binsted, Peter W.

    2012-01-01

    InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Analysis of the local structure of InN with a bandgap energy of 0.8 and 1.9 eV and annealed InN using X-ray absorption fine structure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao [Materials Laboratories, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Yoshihiro [Materials Analysis Lab., Sony Corporation, 4-18-1 Okada, Atsugi, Kanagawa 243-0021 (Japan); Wakahara, Akihiro [Deptm. of Electrical and Electronic Engineering, Toyohashi Univ. of Tech., Toyohashi 441-8580 (Japan); Yamaguchi, Tomohiro; Araki, Tsutomu; Nanishi, Yasushi [Deptm. of Photonics, Ritsumeikan Univ., 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan)

    2006-06-15

    We compared the local structure around In atoms in microwave-excited MOCVD- and MBE-grown InN film which indicates an absorption edge at 1.9 and 0.8 eV, respectively. The co-ordination numbers of the 1st-nearest neighbor N atoms and the 2nd-nearest neighbor In atoms for MBE-grown InN were n(N)=3.9{+-}0.5 and n(In)=12.4{+-}0.9, which are close to the ideal value of n(N)=4 and n(In)=12 for InN without defects, respectively. By thermal annealing, the structure of MBE-grown InN was changed from InN to In{sub 2}O{sub 3}, and the absorption edge was changed from 0.8 to 3.5 eV. However, the microwave-excited MOCVD-grown InN had no structure of In{sub 2}O{sub 3}, and had the reduced co-ordination numbers of the 2nd-nearest neighbor In atoms of n(In)=10.6-11.7. From these results, we conclude that the origin of the 1.9-eV absorption edge of InN is the imperfections (defects) of the In lattice sites of InN, rather than the generation of In{sub 2}O{sub 3}, which has a bandgap energy of 3.5 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

    International Nuclear Information System (INIS)

    Jamil, Muhammad; Arif, Ronald A.; Ee, Yik-Khoon; Tong, Hua; Tansu, Nelson; Higgins, John B.

    2008-01-01

    This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH 3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650 C and >3 x 10 5 , respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ∝0.3 nm on 2 μm x 2 μm area, while the RMS roughness of the InN film grown on GaN/Si(111) templates is found as ∝0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN(0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Polarity and microstructure in InN thin layers grown by MOVPE

    International Nuclear Information System (INIS)

    Kuwano, N.; Nakahara, Y.; Amano, H.

    2006-01-01

    Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Electron transport in wurtzite InN

    Indian Academy of Sciences (India)

    InN transport; mobility; energy and momentum relaxation; impurity scattering. ... future generation solar cell because the nitride alloys can cover the whole ... We apply the ensemble Monte Carlo method to investigate the electron transport in.

  16. Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Min Hwa; Moon, Dae Young; Park, Jinsub; Nanishi, Yasushi; Yi, Gyu-Chul; Yoon, Euijoon

    2012-01-01

    We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al 2 O 3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Unusual photoluminescence properties of vertically aligned InN nanorods grown by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Shen, C.H.; Chen, H.Y.; Lin, H.W.; Wu, C.Y.; Gwo, S.; Klochikhin, A.A.; Davydov, V.Yu.

    2007-01-01

    We report the unusual photoluminescence (PL) properties of vertically aligned InN nanorod arrays grown on Si(111) with a Si 3 N 4 buffer layer. The optimum growth conditions of InN nanorods are obtained by controlling the III/V ratio and the growth temperature. Structural characterization by X-ray diffraction and scanning electron microscopy indicates that individual nanorods are wurtzite InN single crystals with the growth direction along the c-axis. Near-infrared PL from InN nanorods is clearly observed at room temperature. However, in comparison to the PL from InN epitaxial films, the PL from InN nanorods is significantly lower in efficiency and exhibit anomalous temperature dependence. We propose that these unusual PL properties are results of considerable structural disorder (especially for the low-temperature grown InN nanorods) and strong surface electron accumulation effect. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Effects of Cp2Mg supply on MOVPE growth behavior of InN

    International Nuclear Information System (INIS)

    Sugita, K.; Sasamoto, K.; Hashimoto, A.; Yamamoto, A.

    2011-01-01

    This report shows the effect of Cp 2 Mg supply on MOVPE growth behavior of InN. At low growth temperature (∝600 C), the formation of adducts occurred, which degenerates the crystal quality. With increasing the growth temperature, the adduct formation was suppressed because the decomposition of Cp 2 Mg was enhanced and thus the incorporation of carbon into the film was suppressed. The use of Cp 2 Mg during InN growth increases the growth rate in the lateral direction. Non-doped InN film grown on GaN buffer has an In-face of the top side. On the other hand, the inversion domains seems to be formed in the highly Mg-doped InN. Tilt distribution decreases from 65 to 30 arcmin with the increase of Cp 2 Mg/TMI molar ratio 0 to 0.06. The donor is produced in highly Mg-doped MOVPE-grown InN (Cp 2 Mg/TMI molar ratio > 0.005). Therefore, the effect of Cp 2 Mg supply on MOVPE growth behavior of InN is found to improve a macro-scale crystal quality but also produces the donor (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Investigations on the structural and optical properties of sphere-shaped indium nitride (InN)

    Energy Technology Data Exchange (ETDEWEB)

    Bagavath, C.; Kumar, J. [Anna University, Crystal Growth Centre, Chennai, Tamil Nadu (India); Nasi, L. [IMEM-CNR, Parma (Italy)

    2017-04-15

    Indium nitride (InN) sphere-shaped micro crystals and nano crystals were made using sol-gel method. The crystalline size of the samples were calculated using X-ray diffraction, which were found to increase with the increase of nitridation temperature and time. High resolution-transmission electron microscopy images exhibited the distinct sphere shape of InN with different size of micro and nanometers. The calculated band gap of InN spheres using photo luminescence and UV-visible absorption spectra, was found to be 1.2 eV. Optical phonon modes of InN were determined from micro-Raman studies. (orig.)

  20. Double resonance Raman effects in InN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Domenech-Amador, N.; Cusco, R.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Calarco, R. [Institute of Bio- and Nanosystems, Research Center Juelich GmbH, Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Berlin (Germany); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2012-04-15

    We study the excitation wavelength dependence of the Raman spectra of InN nanowires. The E{sub 1}(LO) phonon mode, which is detected in backscattering configuration because of light entering through lateral faces, exhibits an upward frequency shift that can be explained by Martin's double resonance. The E{sub 1} (LO)/E{sub 2}{sup h} intensity ratio increases with the excitation wavelength more rapidly than the A{sub 1}(LO)/E{sub 2}{sup h} ratio measured in InN thin films. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Growth modes of InN (000-1) on GaN buffer layers on sapphire

    International Nuclear Information System (INIS)

    Liu Bing; Kitajima, Takeshi; Chen Dongxue; Leone, Stephen R.

    2005-01-01

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesalike with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered

  2. Crystallographic deterioration of MOVPE InN during the growth

    International Nuclear Information System (INIS)

    Sugita, K.; Nagai, Y.; Houchin, Y.; Hashimoto, A.; Yamamoto, A.

    2007-01-01

    This paper reports the crystallographic degradation of MOVPE InN during the growth. Using FWHMs of X-ray rocking curve, tilt ((0002)) and twist ((10-10)) angle distributions are evaluated and effects of the major growth parameters, such as growth temperature, growth time and with/without GaN buffer in the degradation, are revealed. With increasing either thickness of grown InN or growth temperature up to 600 C, the tilt angle distribution is markedly increased, indicating the crystallographic degradation of grown films. The use of a GaN buffer reduces such degradation. Since the twist angle distribution is scarcely changed by such growth parameters, the destruction of InN crystals during growth and annealing is concluded to be anisotropic. The trends of the crystallographic degradation revealed here are in good agreement with those for the electrical and optical degradation previously reported. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Spectral dependence of third-order nonlinear optical properties in InN

    International Nuclear Information System (INIS)

    Ahn, H.; Lee, M.-T.; Chang, Y.-M.

    2014-01-01

    We report on the nonlinear optical properties of InN measured in a wide near-infrared spectral range with the femtosecond Z-scan technique. The above-bandgap nonlinear absorption in InN is found to originate from the saturation of absorption by the band-state-filling and its cross-section increases drastically near the bandgap energy. With below-bandgap excitation, the nonlinear absorption undergoes a transition from saturation absorption (SA) to reverse-SA (RSA), attributed to the competition between SA of band-tail states and two-photon-related RSA. The measured large nonlinear refractive index of the order of 10 −10 cm 2 /W indicates InN as a potential material for all-optical switching and related applications

  4. Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

    Science.gov (United States)

    Segura-Ruiz, J.; Molina-Sánchez, A.; Garro, N.; García-Cristóbal, A.; Cantarero, A.; Iikawa, F.; Denker, C.; Malindretos, J.; Rizzi, A.

    2010-09-01

    Photoluminescence excitation (PLE) spectra have been measured for a set of self-assembled InN nanowires (NWs) and a high-crystalline quality InN layer grown by molecular-beam epitaxy. The PLE experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN NW. The differences in the PLE spectra can be accounted for the inhomogeneous electron distribution within the NWs caused by a bulk donor concentration (ND+) and a two-dimensional density of ionized surface states (Nss+) . For NW radii larger than 30 nm, ND+ and Nss+ modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data.

  5. LDA+U and tight-binding electronic structure of InN nanowires

    Science.gov (United States)

    Molina-Sánchez, A.; García-Cristóbal, A.; Cantarero, A.; Terentjevs, A.; Cicero, G.

    2010-10-01

    In this paper we employ a combined ab initio and tight-binding approach to obtain the electronic and optical properties of hydrogenated Indium nitride (InN) nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by ab initio techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

  6. Nitridation effects of Si(1 1 1) substrate surface on InN nanorods grown by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Shan [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tan, Jin, E-mail: jintan_cug@163.com [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074 (China); Li, Bin; Song, Hao; Wu, Zhengbo; Chen, Xin [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China)

    2015-02-05

    Graphical abstract: The morphology evolution of InN nanorods in samples (g)–(i). The alignment of InN nanorods is improved and the deviation angle distribution narrows down with increase in nitriding time. It suggests that extending the nitriding time can enhance the vertical orientation of InN nanorods. - Highlights: • InN nanorods were grown on surface nitrided Si(1 1 1) substrate using PAMBE system. • Nitridation of substrate surface has a strong effect on morphology of InN nanorods. • InN nanorods cannot be formed with 1 min nitridation of Si(1 1 1) substrate. • Increasing nitriding time will increase optimum growth temperature of InN nanorods. • Increasing nitriding time can enhance vertical orientation of InN nanorods. - Abstract: The InN nanorods were grown on Si(1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE) system, with a substrate nitridation process. The effect of nitriding time of Si(1 1 1) substrate on morphology, orientation and growth temperature of InN nanorods was characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). The deviation angle of InN nanorods was measured to evaluate the alignment of arrays. The results showed that InN nanorods could not be formed with 1 min nitridation of Si(1 1 1) substrate, but they could be obtained again when the nitriding time was increased to more than 10 min. In order to get aligned InN nanorods, the growth temperature needed to increase with longer nitriding time. The vertical orientation of InN nanorods could be enhanced with increase in nitriding time. The influence of the substrate nitridation on the photoluminescence (PL) spectra of InN nanorods has been investigated.

  7. Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions

    Energy Technology Data Exchange (ETDEWEB)

    Lo, Yun-Yo [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Huang, Man-Fang, E-mail: mfhuang@cc.ncue.edu.tw [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Chiang, Yu-Chia [Institute of Photonics, National Changhua University of Education, Changhua, Taiwan, ROC (China); Fan, Jenn-Chyuan [Department of Electronic Engineering, Nan Kai University of Technology, Nantou, Taiwan, ROC (China)

    2015-08-31

    This study investigated the influence of indium accumulation happened on the surface of a-plane InN grown under different growth conditions. Three different growth rates with N/In ratio from stoichiometric to N-rich were used to grow a-plane InN epifilms on GaN-buffered r-plane sapphires by plasma-assisted molecular beam epitaxy. When a-plane InN was grown above 500 °C with a high growth rate, abnormally high in-situ reflectivity was found during a-plane InN growth, which was resulted from indium accumulation on surface owing to In-N bonding difficulty on certain crystal faces of a-plane InN surface. Even using excess N-flux, indium accumulation could still be found in initial growth and formed 3-dimension-like patterns on a-plane InN surface which resulted in rough surface morphology. By reducing growth rate, surface roughness was improved because indium atoms could have more time to migrate to suitable position. Nonetheless, basal stacking fault density and crystal anisotropic property were not affected by growth rate. - Highlights: • High growth temperature could cause indium accumulation on a-plane InN surface. • Indium accumulation on a-plane InN surface causes rough surface. • Low growth rate improves surface morphology but not crystal quality.

  8. Structure analysis of InN film using extended X-ray absorption fine structure method

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, T.; Kobayashi, T.; Hirata, S. [Core Technology Development Center, Core Technology and Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014 (Japan); Kudo, Y.; Liu, K.L. [Technology Solutions Center, Sony Corporation, 4-16-1 Okata, Atsugi, Kanagawa 243-0021 (Japan); Uruga, T.; Honma, T. [Japan Synchrotron Radiation Research Institute, Mikazuki-cho, Hyogo 679-5198 (Japan); Saito, Y.; Hori, M.; Nanishi, Y. [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2002-12-01

    We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d{sub In-N}=0.215 nm and d{sub In-In}=0.353 nm, respectively. The In-N bond length of d{sub In-In}=0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  9. Structure analysis of InN film using extended X-ray absorption fine structure method

    International Nuclear Information System (INIS)

    Miyajima, T.; Kobayashi, T.; Hirata, S.; Kudo, Y.; Liu, K.L.; Uruga, T.; Honma, T.; Saito, Y.; Hori, M.; Nanishi, Y.

    2002-01-01

    We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N =0.215 nm and d In-In =0.353 nm, respectively. The In-N bond length of d In-In =0.353 nm was closed to the a-axis lattice constant of a=0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  10. Impact of potassium and water on the electronic properties of InN(0001) surfaces

    International Nuclear Information System (INIS)

    Reiss, S.; Eisenhardt, A.; Krischok, S.; Himmerlich, M.

    2014-01-01

    In this work we investigate the interaction of potassium and water with 2 x 2 reconstructed InN(0001) surfaces prepared by plasma-assisted molecular beam epitaxy. The influence of adsorbate-substrate-interaction on surface properties is characterized in-situ by photoelectron spectroscopy. Potassium exposure leads to a strong reduction in the work function Φ to 1.6 eV revealing a charge transfer from the adsorbate to the InN surface. In parallel, a reduction of the surface downward band bending by 0.2 eV and hence a reduced electron accumulation density is observed. While interaction of water with clean InN(0001)-2 x 2 surfaces induces only minor changes in the surface band bending, water adsorption at potassium covered InN(0001) leads to a reversal of the K-induced reduction in surface band bending and a slight increase of Φ to 2.4 eV. These results show that surrounding water modifies the interaction of potassium with InN(0001) surfaces. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Radiation defects in InN irradiated with high-energy electrons

    International Nuclear Information System (INIS)

    Zhivul'ko, V.D.; Mudryj, A.V.; Yakushev, M.V.; Martin, R.; Shaff, V.; Lu, Kh.; Gurskij, A.L.

    2013-01-01

    The influence of high energy (6 MeV, fluencies 10 15 – 10 18 cm -2 ) electron irradiation on the fundamental absorption and luminescence properties of InN thin films which were grown on sapphire substrates by molecular bean epitaxial has been studied. It is found that electron irradiation increases the electron concentration and band gap energy E g of InN. The shift of the band gap energy E g is a manifestation of the Burshtein-Mossa effect. (authors)

  12. Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

    2012-01-01

    The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

    International Nuclear Information System (INIS)

    Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M.

    2013-01-01

    Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructed surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.

  14. Epitaxial growth of InN on c-plane sapphire by pulsed laser deposition with r.f. nitrogen radical source

    International Nuclear Information System (INIS)

    Ohta, J.; Fujioka, H.; Honke, T.; Oshima, M.

    2004-01-01

    We have grown InN films on c-plane sapphire substrates by pulsed laser deposition (PLD) with a radio frequency nitrogen radical source for the first time and investigated the effect of the substrate surface nitridation on the structural and electrical properties of InN films with reflection high energy electron diffraction (RHEED), atomic force microscope, the Hall effect measurements and high-resolution X-ray diffraction (HRXRD). RHEED and HRXRD characterizations revealed that high-quality InN grows epitaxially on sapphire by PLD and its epitaxial relationship is InN (0 0 0 1) parallel sapphire (0 0 0 1) and InN [2 -1 -1 0] parallel sapphire [1 0 -1 0]. The InN crystalline quality and the electron mobility are improved by the substrate nitridation process. The area of the pits at the InN surface is reduced by the substrate nitridation process probably due to the reduction in the interface energy between InN and the substrate. The full width at half maximum of the -1 -1 2 4 X-ray rocking curve for InN grown by the present technique without using any buffer layers was as small as 34.8 arcmin. These results indicate that the present technique is promising for the growth of the high-quality InN films

  15. Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

    International Nuclear Information System (INIS)

    Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

    2012-01-01

    We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Kazimierz Pospieszny, Domus Malbork. Zamek krzyżacki w typie regularnym [Domus Malbork. Castle of the Teutonic Order of a regular type] (Monografie Uniwersytetu Mikołaja Kopernika w Toruniu), Wydawnictwo Naukowe Uniwersytetu Mikołaja Kopernika

    OpenAIRE

    Raczkowski, Juliusz

    2017-01-01

    Kazimierz Pospieszny, Domus Malbork. Zamek krzyżacki w typie regularnym [Domus Malbork. Castle of the Teutonic Order of a regular type] (Monografie Uniwersytetu Mikołaja Kopernika w Toruniu), Wydawnictwo Naukowe Uniwersytetu Mikołaja Kopernika, Toruń 2014, 336 pp., 283 black-and-white figures., 30 coloured figures, ISBN: 978-83-231-3084-0

  17. Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Yee Ling; Peng Xingyu; Liao, Ying Chieh; Yao Shude; Chen, Li Chyong; Chen, Kuei Hsien; Feng, Zhe Chuan

    2011-01-01

    A series of InN thin films was grown on sapphire substrates via plasma-assisted molecular beam epitaxy (PA-MBE) with different nitrogen plasma power. Various characterization techniques, including Hall, photoluminescence, Raman scattering and Rutherford backscattering, have been employed to study these InN films. Good crystalline wurtzite structures have been identified for all PA-MBE grown InN films on sapphire substrate, which have narrower XRD wurtzite (0002) peaks, showed c-axis Raman scattering allowed longitudinal optical (LO) modes of A 1 and E 1 plus E 2 symmetry, and very weak backscattering forbidden transverse optical (TO) modes. The lower plasma power can lead to the lower carrier concentration, to have the InN film close to intrinsic material with the PL emission below 0.70 eV. With increasing the plasma power, high carrier concentration beyond 1 x 10 20 cm -3 can be obtained, keeping good crystalline perfection. Rutherford backscattering confirmed most of InN films keeping stoichiometrical In/N ratios and only with higher plasma power of 400 W leaded to obvious surface effect and interdiffusion between the substrate and InN film.

  18. Four bars inn; Four bars inn

    Energy Technology Data Exchange (ETDEWEB)

    Nishiumi, T. [National Defense Academy, Kanagawa (Japan)

    1999-05-15

    The name Four Bars Inn puns on four drinking bars and four bars on a musical score. It is a public house sited on the busy St. Mary Street, Cardiff, England. During my stay in that town, I often attended the regular jam session that opened at the bar at nine o`clock every Monday evening. A jam session is an event in which any amateur player, and a professional artist occasionally, is allowed to come on the stage freely and to play jazz, the participation fee as low as 300-yen. It is an occasion that provides a friendly meeting of man and woman, young and old, everyone carrying a pint of ale. Senior people happily talking to young ones aged like their grandchildren certainly presents a heart-warming scene, which we scarcely encounter in Japan. The affection that the British entertain toward their domestic furnishings relayed down through many a generation may lead to their respect for senior citizens. I heartily look forward detecting like scenes some day at drinking spots in Japan where the consumption-happy days are over. (NEDO)

  19. A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∝650 C)

    International Nuclear Information System (INIS)

    Sugita, K.; Hashimoto, A.; Yamamoto, A.

    2009-01-01

    This paper indicates an evidence for the deterioration of the MOVPE InN during the growth at high temperature (∝650 C). It is noted that the deterioration occurs near the interface and InN film becomes porous layer during the further growth. The porous layer has high electron density. The rate-limiting process of N-face InN decomposition depends on atomic hydrogen. The atomic hydrogen produced by the decomposition of NH 3 is responsible for the deterioration of InN film. The crystal quality of InN improves with decreasing the porous layer which is important for MOVPE InN. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Adsorption of gas molecules on graphene-like InN monolayer: A first-principle study

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiang; Yang, Qun [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Meng, Ruishen [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Tan, Chunjian [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Liang, Qiuhua [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Jiang, Junke [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Ye, Huaiyu [Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China); Chen, Xianping, E-mail: xianpingchen@cqu.edu.cn [Faculty of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, 541004 Guilin (China); Key Laboratory of Optoelectronic Technology & Systems, Education Ministry of China, Chongqing University and College of Optoelectronic Engineering, Chongqing University, 400044 Chongqing (China)

    2017-05-15

    Highlights: • A comprehensive adsorption mechanism of InN monolayer is theoretical studied to distinguish the physic/chemi-sorption. • Different adsorption sites for different gases are systematically discussed. • The influence (enhanced or weakened) of external electric field to InN-gas system is well investigated. • The influences of gas adsorption to the optical properties (work function and light adsorption ability) of InN monolayer are also researched. - Abstract: Using first-principles calculation within density functional theory (DFT), we study the gas (CO, NH{sub 3}, H{sub 2}S, NO{sub 2}, NO, SO{sub 2}) adsorption properties on the surface of single-layer indium nitride (InN). Four different adsorption sites (Bridge, In, N, Hollow) are chosen to explore the most sensitive adsorption site. On the basis of the adsorption energy, band gap and charge transfer, we find that the most energetic favourable site is changeable between In site and N site for different gases. Moreover, our results reveal that InN is sensitive to NH{sub 3}, SO{sub 2}, H{sub 2}S and NO{sub 2}, by a physisorption or a chemisorption nature. We also perform a perpendicular electric field to the system and find that the applied electric field has a significant effect for the adsorption process. Besides, we also observed the desorption effects on NH{sub 3} adsorbed at the hollow site of InN when the electric field applied. In addition, the optical properties of InN monolayer affected by different gases are also discussed. Most of the gas adsorptions will cause the inhibition of light adsorption while the others can reduce the work function or enhance the adsorption ability in visible region. Our theoretical results indicate that monolayer InN is a promising candidate for gas sensing applications.

  2. Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111 Substrates

    Directory of Open Access Journals (Sweden)

    Yao Guo

    2016-01-01

    Full Text Available The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ (111 substrates are investigated using first-principles calculations based on density functional theory with GGA + U method. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111 surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001 // CeSZ (111 and InN [112¯0] // CeSZ [11¯0]. In addition, density of states (DOS analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111 surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

  3. In-situ SiN{sub x}/InN structures for InN field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

    2016-04-04

    Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

  4. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

    2010-09-01

    100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

  5. A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

    International Nuclear Information System (INIS)

    Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

    2006-01-01

    The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Near-infrared InN quantum dots on high-In composition InGaN

    Energy Technology Data Exchange (ETDEWEB)

    Soto Rodriguez, Paul E. D.; Gomez, Victor J.; Kumar, Praveen; Calleja, Enrique; Noetzel, Richard [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2013-04-01

    We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

  7. Customer Satisfaction at the Hospitality Industry: Holiday Inn Helsinki-Vantaa Airport

    OpenAIRE

    Eld, Anna

    2015-01-01

    The intention of this Bachelor’s Degree thesis was to examine and observe the customer service and especially customer satisfaction in a hotel industry, and Holiday Inn Helsinki-Vantaa Airport was selected to be an example for this survey. This survey and thesis is carried out by the author in collaboration with Holiday Inn Helsinki-Vantaa Airport, which was the commissioner of this Bachelor’s Degree thesis. This hotel was chosen since the author of this thesis did her second internship there...

  8. Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

    International Nuclear Information System (INIS)

    Shu, G W; Wu, P F; Liu, Y W; Wang, J S; Shen, J L; Lin, T Y; Pong, P J; Chi, G C; Chang, H J; Chen, Y F; Lee, Y C

    2006-01-01

    We studied the optical and electrical properties of InN epilayers with rapid thermal annealing (RTA). The intensity of the photoluminescence (PL) and the carrier mobility were found to increase as the temperature of RTA was increased. We suggest that the formation of compensating acceptors (indium vacancies) after RTA is responsible for the improvement of the quality in InN. The dependence of the PL emission peak on carrier concentration provides a possible method for estimating the carrier concentration in degenerate InN. (letter to the editor)

  9. PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING

    Directory of Open Access Journals (Sweden)

    Roberto Bernal Correa

    2014-01-01

    Full Text Available InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100, Si (111, and glass. The substrate temperature Ts was varied (300-500 oC in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates  ~ 0.5 mm and ~ 50 nm of different geometries.

  10. Molecular beam epitaxy of InN layers on Sapphire, GaN and indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Denker, Christian; Landgraf, Boris; Schuhmann, Henning; Malindretos, Joerg; Seibt, Michael; Rizzi, Angela [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany); Segura-Ruiz, Jaime; Gomez-Gomez, Maribel; Cantarero, Andres [Materials Science Institute, University of Valencia, Paterna (Spain)

    2009-07-01

    Among the group-III nitrides semiconductors, InN is the one with the narrowest gap (0.67 eV), lowest effective electron mass and highest peak drift velocity. It is therefore a very interesting material for several applications, in particular semiconductor solar cells. Furthermore, the high electron affinity makes it suitable also as electrode material for organic solar cells. InN layers were grown by molecular beam epitaxy on MOCVD GaN templates, on bare c-plane sapphire and on polycrystalline indium tin oxide. On all substrates the III-V ratio as well as the substrate temperature was varied. A RHEED analysis of InN growth on GaN showed a relatively sharp transition from N-rich and columnar growth to In-rich growth with droplet formation by increasing the In flux impinging on the surface. The InN layers on single crystalline substrates were characterized by SEM, AFM, XRD, PL and Raman. The InN layers on ITO were mainly analyzed with respect to the surface morphology with SEM. HRTEM in cross section gives insight into the structure of the interface to the ITO substrate.

  11. Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

    2010-07-15

    InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  12. Morte, Sacrifício Humano e Renascimento : uma interpretação Iconográfica da Runestone Viking de Hammar I

    OpenAIRE

    Langer, Johnni

    2003-01-01

    The present article still interprets an iconographic source without detailed academic studies, the Viking runestone of Hammar I, originary of the island of Gotland (Sweden). An important document on the religious mentality of the Scandinavians, its mythological conceptions on the deities, human sacrifices, life after the death and some important symbols for the cult to the Óðinn god. Another basic aspect of our interpretation is the possibility to compare the classic Icelandic source...

  13. Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Dimakis, E.; Domagala, J.; Iliopoulos, E.; Adikimenakis, A.; Georgakilas, A.

    2007-01-01

    The in-plane lattice parameters of InN, GaN and Al 2 O 3 in a InN/GaN/Al 2 O 3 (0001) heterostructure have been measured as a function of temperature in the range of 25-350 C, using high resolution X-ray diffraction. The results reveal that both the GaN and InN crystals follow the in-plane thermal expansion of the Al 2 O 3 substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al 2 O 3 interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two-dimensional (2D) or three-dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Maria Spławska-Korczak, Zamek krzyżacki w Świeciu. Próba rekonstrukcji zamku wysokiego w średniowieczu [The Teutonic Order’s Castle in Schwetz. An attempt at reconstructing the High Castle in the Middle Ages], Wydawnictwo Naukowe UMK ...

    OpenAIRE

    Kwiatkowski, Krzyszof

    2017-01-01

    Maria Spławska-Korczak, Zamek krzyżacki w Świeciu. Próba rekonstrukcji zamku wysokiego w średniowieczu [ The Teutonic Order’s Castle in Schwetz. An attempt at reconstructing the High Castle in the Middle Ages ], Wydawnictwo Naukowe Uniwersytetu Mikołaja Kopernika, Toruń 2014, 222 pp. + 70 illustrations, ISBN: 978-83-231-3247-9

  15. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

    International Nuclear Information System (INIS)

    Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

    2008-01-01

    High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

  16. Growth and properties of InN, InGaN, and InN/InGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, H.; Na, H. [Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Kurouchi, M.; Muto, D.; Takado, S.; Araki, T.; Nanishi, Y. [Dept. of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan); Miyajima, T. [Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

    2006-01-01

    This paper describes our recent progress on InN, In-rich In{sub x}Ga{sub 1-x}N, and InN/In{sub x}Ga{sub 1-x}N quantum wells (QWs) grown by radio-frequency plasma-assisted molecular-beam epitaxy. Among the essential growth sequences to obtain high-quality InN, the nitridation process of (0001) sapphire substrates was reexamined. It was found that the lower-temperature and longer-period nitridation-process was very effective in improving crystalline quality of InN films. We succeeded in dramatically improving c -axis orientation of InN films without deteriorating their a -axis orientation by nitridating the substrates at a relatively low-temperature of 300 C for a relatively long period of 2 h. The full widths at half maximum (FWHMs) of (0002) X-ray rocking curves as narrow as 1 arcmin were obtained from only 400 nm thick InN films. These FWHMs are the narrowest value ever reported for InN and moreover approximately a twentieth part of the values obtained from our conventional InN films with a similar thickness, which were grown via the conventional nitridation process carried out at 550 C for 1 h. Furthermore interference fringes in X-ray diffraction ({omega}-2{theta} scan) were observed from these improved InN films. These high crystalline quality InN layers have been employed as a template for the growth of In-rich In{sub x}Ga{sub 1-x}N layers (0.70{<=}x{<=}0.94). The resultant In{sub x}Ga{sub 1-x}N layers have shown dramatic improvements in not only the surface morphology but also both the a- and c-axis orientations. By employing In{sub 0.8}Ga{sub 0.2}N layers of improved quality as the bottom barrier layer, InN/In{sub 0.8}Ga{sub 0.2}N multiple quantum well (MQW) and single quantum well (SQW) structures with different well widths were fabricated. Clear satellite peaks of X-ray diffraction were observed from these MQW structures. Both of these SQW and MQW structures have exhibited a blue shift of the photoluminescence peak energy with decreasing well width

  17. Evaluation of the Environmental Health Conditions of Qom Hotels & Inns

    Directory of Open Access Journals (Sweden)

    B. Farzinnia

    2009-02-01

    Full Text Available Background and ObjectivesTourism is one of the three major global industries with 4 percent annual economic growth. Qom with roughly 17 million tourists in 2005 was the second religious tourism center in Iran. This study was designed to determine the environmental health criteria of Qom hotels and inns in 2007.MethodsThis descriptive - cross sectional study was carried out based on a standard check list of substance of edible, drinkable, cosmetic and hygienic products law from ministry of health and medical sciences. The checklist included 73 questions which were completed by face to face interviews and sanitary inspections. After analyzing the results of each residential center, the questionnaires were classified into three categories: hygienic (over 80 score, sanitary (40-79 and unacceptable centers (less than 40. The data were presented and analyzed by descriptive and analytical statistical methods such as X 2 and Fisher exact test.ResultsThe percentages of hygienic, sanitary and unacceptable conditions of hotels and inns were 35.5, 54.8 and 9.7, respectively. There was a direct relationship between academic degree of residential managers and the validity of employees health card (P=0.042 ConclusionBased on this the research, the environmental status of Qom hotels and inns was in relatively desirable conditions. Residential places with unacceptable condition were almost located in the old region of the city (e.g. around the Holly Shrine. Due to the structural failures, architectural problems and tremendous cost for repairs, it’s better that their activities be stopped and banned by government. With regard to the high percentage of hotels with sanitary conditions, at least improvements in health conditions accompanied by training and supervision are recommended. Keywords: Environmental Health; Environment and Public Health; Hotel; Inn; Qom, Iran.

  18. 4th INNS Symposia Series on Computational Intelligence in Information Systems

    CERN Document Server

    Au, Thien

    2015-01-01

    This book constitutes the refereed proceedings of the Fourth International Neural Network Symposia series on Computational Intelligence in Information Systems, INNS-CIIS 2014, held in Bandar Seri Begawan, Brunei in November 2014. INNS-CIIS aims to provide a platform for researchers to exchange the latest ideas and present the most current research advances in general areas related to computational intelligence and its applications in various domains. The 34 revised full papers presented in this book have been carefully reviewed and selected from 72 submissions. They cover a wide range of topics and application areas in computational intelligence and informatics.  

  19. Ab-initio study of Mg-doped InN(0001 surface

    Directory of Open Access Journals (Sweden)

    A. Belabbes

    2013-01-01

    Full Text Available We study the incorporation of Mg atoms into the InN(0001 surface. Energies and atomic geometries are described within density functional theory, while the electronic structure is investigated by an approximate quasiparticle method that yields a gap value of 0.7 eV for bulk InN. The formation of substitutional Mg is energetically favored in the surface layer. The surface electronic structure is less influenced by Mg-derived states. The Fermi level is pinned by In-derived surface states. With increasing depth of Mg beneath the surface the Fermi-level position moves toward the valence band top, suggesting formation of holes and, hence, p-doping of Mg in bulk-like layers.

  20. Crystallinity, Surface Morphology, and Photoelectrochemical Effects in Conical InP and InN Nanowires Grown on Silicon.

    Science.gov (United States)

    Parameshwaran, Vijay; Xu, Xiaoqing; Clemens, Bruce

    2016-08-24

    The growth conditions of two types of indium-based III-V nanowires, InP and InN, are tailored such that instead of yielding conventional wire-type morphologies, single-crystal conical structures are formed with an enlarged diameter either near the base or near the tip. By using indium droplets as a growth catalyst, combined with an excess indium supply during growth, "ice cream cone" type structures are formed with a nanowire "cone" and an indium-based "ice cream" droplet on top for both InP and InN. Surface polycrystallinity and annihilation of the catalyst tip of the conical InP nanowires are observed when the indium supply is turned off during the growth process. This growth design technique is extended to create single-crystal InN nanowires with the same morphology. Conical InN nanowires with an enlarged base are obtained through the use of an excess combined Au-In growth catalyst. Electrochemical studies of the InP nanowires on silicon demonstrate a reduction photocurrent as a proof of photovolatic behavior and provide insight as to how the observed surface polycrystallinity and the resulting interface affect these device-level properties. Additionally, a photovoltage is induced in both types of conical InN nanowires on silicon, which is not replicated in epitaxial InN thin films.

  1. Growth of InN on 6H-SiC by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Brown, April S.; Kim, Tong-Ho; Choi, Soojeong; Wu, Pae; Morse, Michael [Department of Electrical and Computer Engineering, Duke University, 128 Hudson Hall, Durham, NC (United States); Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Moto, Akihiro [Innovation Core SEI, Inc., 3235 Kifer Road, Santa Clara, CA 95051 (United States)

    2006-06-15

    We have investigated the growth of InN films by plasma assisted molecular beam epitaxy on the Si-face of 6H-SiC(0001). Growth is performed under In-rich conditions using a two-step process consisting of the deposition of a thin, low-temperature 350 C InN buffer layer, followed by the subsequent deposition of the InN epitaxial layer at 450 C. The effect of buffer annealing is investigated. The structural and optical evolution of the growing layer has been monitored in real time using RHEED and spectroscopic ellipsometry. Structural, morphological, electrical and optic properties are discussed. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.; Kehagias, Th.; Komninou, Ph.; Georgakilas, A.

    2005-01-01

    The thermodynamic aspects of indium-face InN growth by radio frequency plasma-assisted molecular-beam epitaxy (rf-MBE) and the nucleation of InN on gallium-face GaN (0001) surface were investigated. The rates of InN decomposition and indium desorption from the surface were measured in situ using reflected high-energy electron diffraction and the rf-MBE 'growth window' of In-face InN (0001) was identified. It is shown that sustainable growth can be achieved only when the arrival rate of active nitrogen species on the surface is higher than the arrival rate of indium atoms. The maximum substrate temperature permitting InN growth as a function of the active nitrogen flux was determined. The growth mode of InN on Ga-face GaN (0001) surface was investigated by reflected high-energy electron diffraction and atomic force microscopy. It was found to be of the Volmer-Weber-type for substrate temperatures less than 350 deg. C and of the Stranski-Krastanov for substrate temperatures between 350 and 520 deg. C. The number of monolayers of initial two-dimensional growth, in the case of Stranski-Krastanov mode, varies monotonically with substrate temperature, from 2 ML at 400 deg. C to about 12 ML at 500 deg. C. The evolution and coalescence of nucleated islands were also investigated as a function of substrate temperature. It was found that at higher temperature their coalescence is inhibited leading to porous-columnar InN thin films, which exhibit growth rates higher than the nominal value. Therefore, in order to achieve continuous InN layers on GaN (0001) a two-step growth approach is introduced. In that approach, InN is nucleated at low temperatures on GaN and the growth continues until full coalescence of the nucleated islands. Subsequently, this nucleation layer is overgrown at higher substrate temperature in order to achieve high-quality continuous films. The InN films grown by the two-step method were investigated by x-ray diffraction, Hall-effect measurements, and

  3. Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

    Energy Technology Data Exchange (ETDEWEB)

    Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey); Bilkent University, Institute of Materials Science and Nanotechnology, Ankara (Turkey); Tuzakli, Refik [Bilkent University, Materials Science and Nanotechnology Department, UNAM-National Nanotechnology Research Center, Ankara (Turkey)

    2017-03-15

    Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

  4. Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution

    International Nuclear Information System (INIS)

    Kursungoez, Canan; Uzcengiz Simsek, Elif; Ortac, Buelend; Tuzakli, Refik

    2017-01-01

    Nanostructures of InN have been extensively investigated since nano-size provides a number of advantages allowing applications in nanoscale electronic and optoelectronic devices. It is quite important to obtain pure InN nanocrystals (InN-NCs) to reveal the characteristic features, which gain interest in the literature. Here, we proposed a new approach for the synthesis of ultra-small hexagonal InN-NCs by using suspension of micron-sized InN powder in ethanol with pulsed laser ablation method. The liquid environment, laser energy and ablation time were optimized and a post-synthesis treatment, centrifugation, was performed to achieve InN-NCs with the smallest size. Besides, the micron-sized InN powder suspension, as a starting material, enabled us to obtain InN-NCs having diameters smaller than 5 nm. We also presented a detailed characterization of InN-NCs and demonstrated that the formation mechanism mainly depends on the fragmentation due to laser irradiation of the suspension. (orig.)

  5. Determination of dislocation densities in InN

    Energy Technology Data Exchange (ETDEWEB)

    Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

    2012-03-15

    The magneto-transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann transport equation. It is found that dislocation scattering is the dominant scattering mechanisms at low temperatures because of the large lattice mismatch with the substrate and hence the high density of dislocations in these material systems. Nevertheless, InN epilayers are characterized by a high background carrier density, probably associated with unwanted impurities. Therefore, we also included in our calculations the ionized impurity scattering. However, the effect of ionized impurity scattering as well as the acoustic phonon scattering, remote- background-ionized impurity scattering, and interface roughness scattering on electron mobility are much smaller than that of dislocation scattering. The dislocation densities, in samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m, are then determined from the best fit to the experimental data for the low-temperature transport mobility (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Effective electron mass and phonon modes in n-type hexagonal InN

    Science.gov (United States)

    Kasic, A.; Schubert, M.; Saito, Y.; Nanishi, Y.; Wagner, G.

    2002-03-01

    Infrared spectroscopic ellipsometry and micro-Raman scattering are used to study vibrational and electronic properties of high-quality hexagonal InN. The 0.22-μm-thick highly n-conductive InN film was grown on c-plane sapphire by radio-frequency molecular-beam epitaxy. Combining our results from the ellipsometry data analysis with Hall-effect measurements, the isotropically averaged effective electron mass in InN is determined as 0.14m0. The resonantly excited zone center E1 (TO) phonon mode is observed at 477 cm-1 in the ellipsometry spectra. Despite the high electron concentration in the film, a strong Raman mode occurs in the spectral range of the unscreened A1(LO) phonon. Because an extended carrier-depleted region at the sample surface can be excluded from the ellipsometry-model analysis, we assign this mode to the lower branch of the large-wave-vector LO-phonon-plasmon coupled modes arising from nonconserving wave-vector scattering processes. The spectral position of this mode at 590 cm-1 constitutes a lower limit for the unscreened A1(LO) phonon frequency.

  7. Synthesis of InN nanoparticles by rapid thermal ammonolysis

    Czech Academy of Sciences Publication Activity Database

    Šimek, P.; Sedmidubský, D.; Klimová, K.; Huber, Š.; Brázda, Petr; Mikulics, M.; Jankovský, O.; Sofer, Z.

    2014-01-01

    Roč. 16, č. 12 (2014), "2805-1"-"2805-11" ISSN 1388-0764 R&D Projects: GA ČR GA13-20507S Institutional support: RVO:68378271 Keywords : InN * nanoparticles * nanocrystals Subject RIV: CA - Inorganic Chemistry Impact factor: 2.184, year: 2014

  8. Photomodulated reflectance study on optical property of InN thin films grown by reactive gas-timing rf magnetron sputtering

    International Nuclear Information System (INIS)

    Porntheeraphat, S.; Nukeaw, J.

    2008-01-01

    The photoreflectance (PR) spectroscopy has been applied to investigate the band-gap energy (E g ) of indium nitride (InN) thin films grown by rf magnetron sputtering. A novel reactive gas-timing technique applied for the sputtering process has been successfully employed to grow InN thin films without neither substrate heating nor post annealing. The X-ray diffraction (XRD) patterns exhibit strong peaks in the orientation along (0 0 2) and (1 0 1) planes, corresponding to the polycrystalline hexagonal-InN structure. The band-gap transition energy of InN was determined by fitting the PR spectra to a theoretical line shape. The PR results show the band-gap energy at 1.18 eV for hexagonal-InN thin films deposited at the rf powers of 100 and 200 W. The high rf sputtering powers in combination with the gas-timing technique should lead to a high concentration of highly excited nitrogen ions in the plasma, which enables the formation of InN without substrate heating. Auger electron spectroscopy (AES) measurements further reveal traces of oxygen in these InN films. This should explain the elevated band-gap energy, in reference to the band-gap value of 0.7 eV for pristine InN films

  9. The Dikpālas of ancient Java revisited: A new identification for the 24 directional deities on the Śiva temple of the Loro Jonggrang complex

    Directory of Open Access Journals (Sweden)

    Andrea Acri

    2012-09-01

    Full Text Available Caṇḍi Śiva, sacred centre of the famous ninth-century Loro Jonggrang temple complex at Prambanan, Central Java, is decorated with numerous iconic and narrative reliefs. Starting from the eastern staircase and traversing the perambulatory in a clockwise direction, we find the narrative reliefs of the Rāmāyaṇa on the balustrade wall on our left, and the iconic reliefs of twenty-four seated male deities, each flanked by several attendants – collectively referred to in the accompanying iconographic plan as ‘Lokapālas with attendants’– on our right, that is, on the temple body proper. The prime objective of the present inquiry is propose a new identification of this set of twenty-four deities forming Śiva’s entourage, which remains an unresolved issue in the art history of Central Java. Our findings will have implications for our understanding of the iconographical master plan of Loro Jonggrang, and, in a wider sense, of certain developments in Indo-Javanese and Balinese iconography.

  10. A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

    International Nuclear Information System (INIS)

    Isamoto, K.; Uesaka, Y.; Yamamoto, A.; Hashimoto, A.

    2006-01-01

    We have investigated about a control technique of oxygen contamination into the InN layers by simultaneous irradiation of Ga beam during RF-MOMBE growth using the combination of the TMIn and the RF-plasma nitrogen sources. Red shifts of the band gap energy and the improvement of the electrical properties have been achieved by the Ga beam irradiation. The suppression mechanism of the oxygen contamination has been discussed from the experimental results of the InN growth by the RF-MOMBE with the Ga beam irradiation. The present results strongly indicate that the simultaneous irradiation of the Ga beam would be useful to suppress the oxygen contamination into the InN layers during the growth. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport

    Directory of Open Access Journals (Sweden)

    Zervos Matthew

    2008-01-01

    Full Text Available Abstract We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated carriers near and above the optical absorption edge of InN NWs where an interplay of state filling, photoinduced absorption, and band-gap renormalization have been observed. The interface between states filled by free carriers intrinsic to the InN NWs and empty states has been determined to be at 1.35 eV using CW optical transmission measurements. Transient absorption measurements determined the absorption edge at higher energy due to the additional injected photogenerated carriers following femtosecond pulse excitation. The non-degenerate white light pump-probe measurements revealed that relaxation of the photogenerated carriers occurs on a single picosecond timescale which appears to be carrier density dependent. This fast relaxation is attributed to the capture of the photogenerated carriers by defect/surface related states. Furthermore, intensity dependent measurements revealed fast energy transfer from the hot photogenerated carriers to the lattice with the onset of increased temperature occurring at approximately 2 ps after pulse excitation.

  12. Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

    International Nuclear Information System (INIS)

    Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

    2013-01-01

    Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

  13. High electron mobility InN

    International Nuclear Information System (INIS)

    Jones, R. E.; Li, S. X.; Haller, E. E.; van Genuchten, H. C. M.; Yu, K. M.; Ager, J. W. III; Liliental-Weber, Z.; Walukiewicz, W.; Lu, H.; Schaff, W. J.

    2007-01-01

    Irradiation of InN films with 2 MeV He + ions followed by thermal annealing below 500 deg. C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated samples is limited by triply charged donor defects. Subsequent thermal annealing removes a fraction of the defects, decreasing the electron concentration. There is a large increase in electron mobility upon annealing; the mobilities approach those of the as-grown films, which have 10 to 100 times smaller electron concentrations. Spatial ordering of the triply charged defects is suggested to cause the unusual increase in electron mobility

  14. Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

    International Nuclear Information System (INIS)

    Ohba, R.; Ohta, J.; Shimomoto, K.; Fujii, T.; Okamoto, K.; Aoyama, A.; Nakano, T.; Kobayashi, A.; Fujioka, H.; Oshima, M.

    2009-01-01

    Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been found that the use of HfN (100) buffer layers allows us to grow cubic InN (100) films with an in-plane epitaxial relationship of [001] InN //[001] HfN //[001] MgO . X-ray diffraction and electron back-scattered diffraction measurements have revealed that the phase purity of the cubic InN films was as high as 99%, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD. - Graphical abstract: Cubic InN films have been grown on MgO substrates with HfN buffer layers by pulsed laser deposition (PLD). It has been revealed that the phase purity of the cubic InN films was as high as 99 %, which can be attributed to the use of HfN buffer layers and the enhanced surface migration of the film precursors by the use of PLD.

  15. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Tangi, Malleswararao; De, Arpan; Shivaprasad, S. M.

    2018-01-01

    We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer and nano-wall network (NWN) templates deposited on c-sapphire by varying the film thickness up to 1 μm. The careful experiments are directed towards obtaining high mobility InN layers having a low band gap with improved crystal quality. The dislocation density is quantified by using high resolution X-ray diffraction rocking curve broadening values of symmetric and asymmetric reflections, respectively. We observe that the dislocation density of the InN films grown on GaN NWN is less than that of the films grown on the GaN epilayer. This is attributed to the nanoepitaxial lateral overlayer growth (ELOG) process, where the presence of voids at the interface of InN/GaN NWN prevents the propagation of dislocation lines into the InN epilayers, thereby causing less defects in the overgrown InN films. Thus, this new adaptation of the nano-ELOG growth process enables us to prepare InN layers with high electron mobility. The obtained electron mobility of 2121 cm2/Vs for 1 μm thick InN/GaN NWN is comparable with the literature values of similar thickness InN films. Furthermore, in order to understand the reasons that limit electron mobility, the charge neutrality condition is employed to study the variation of electron mobility as a function of dislocation density and carrier concentration. Overall, this study provides a route to attaining improved crystal quality and electronic properties of InN films.

  16. Observation of Significant enhancement in the efficiency of a DSSC by InN nanoparticles over TiO 2-nanoparticle films

    Science.gov (United States)

    Wang, Tsai-Te; Raghunath, P.; Lu, Yun-Fang; Liu, Yu-Chang; Chiou, Chwei-Huawn; Lin, M. C.

    2011-06-01

    We have studied the effect of InN deposited over TiO2 nanoparticle (NP) films on the performance of dye-sensitized solar cells (DSSCs) using N3 dye with I/I3- electrolyte. A 10-20% increase in efficiency was observed for InN deposited, N3 sensitized 5-8.5 μm thick TiO2 films as compared to similar non-treated films. The deposition of InN was carried out in the temperature range of 573-723 K organometallic chemical vapor deposition (OMCVD). Spectral shifts and DFT calculations with a model anchoring group (R‧COOH) both suggest binding of the N3 dye directly to both InN and the InN/TiO2 sites.

  17. Growth of vertically oriented InN nanorods from In-rich conditions on unintentionally patterned sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Terziyska, Penka T., E-mail: pterziy1@lakeheadu.ca [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); Butcher, Kenneth Scott A. [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada); Rafailov, Peter [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Alexandrov, Dimiter [Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Road, Thunder Bay, ON P7B 5E1 (Canada); MEAglow Ltd., Box 398, 2400 Nipigon Road, Thunder Bay, ON P7C4W1 (Canada)

    2015-10-30

    Highlights: • Vertical InN nanorods are grown on selective areas of sapphire substrates. • In metal droplets nucleate on the sharp needle apexes on the selective areas. • The preferred orientation and the growth direction of the nanorods are (0 0 0 1). • The nanorods grow from the supersaturated indium melt on their tops. - Abstract: Vertically oriented InN nanorods were grown on selective areas of unintentionally patterned c-oriented sapphire substrates exhibiting sharp needles that preferentially accommodate In-metal liquid droplets, using Migration Enhanced Afterglow (MEAglow) growth technique. We point out that the formation of AlN needles on selected areas can be reproduced intentionally by over-nitridation of unmasked areas of sapphire substrates. The liquid indium droplets serve as a self-catalyst and the nanorods grow from the supersaturated indium melt in the droplet in a vertical direction. X-ray diffraction measurements indicate the presence of hexagonal InN only, with preferred orientation along (0 0 0 1) crystal axis, and very good crystalline quality. The room temperature Raman spectrum shows the presence of the A{sub 1}(TO), E{sub 2}(high) and A{sub 1}(LO) phonon modes of the hexagonal InN.

  18. Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers

    International Nuclear Information System (INIS)

    Ruterana, P.; Abouzaid, M.; Gloux, F.; Maciej, W.; Doualan, J.L.; Drago, M.; Schmidtling, T.; Pohl, U.W.; Richter, W.

    2006-01-01

    In this work we investigate the microstructure of InN layers grown by MOCVD on different buffer layers using TEM (InN, GaN). The large mismatch between the various lattices (InN, sapphire or GaN) leads to particular interface structures. Our local analysis allows to show that at atomic scale, the material has the InN lattice parameters and that no metallic In precipitates are present, meaning that the PL emission below 0.8 eV is a genuine property of the InN semiconductor. It is also shown that the N polar layers, which exhibit a 2D growth, have poorer PL emission than In polar layers. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Morphology Controlled Fabrication of InN Nanowires on Brass Substrates

    Directory of Open Access Journals (Sweden)

    Huijie Li

    2016-10-01

    Full Text Available Growth of semiconductor nanowires on cheap metal substrates could pave the way to the large-scale manufacture of low-cost nanowire-based devices. In this work, we demonstrated that high density InN nanowires can be directly grown on brass substrates by metal-organic chemical vapor deposition. It was found that Zn from the brass substrates is the key factor in the formation of nanowires by restricting the lateral growth of InN. The nanowire morphology is highly dependent on the growth temperature. While at a lower growth temperature, the nanowires and the In droplets have large diameters. At the elevated growth temperature, the lateral sizes of the nanowires and the In droplets are much smaller. Moreover, the nanowire diameter can be controlled in situ by varying the temperature in the growth process. This method is very instructive to the diameter-controlled growth of nanowires of other materials.

  20. Inhomogeneous electron distribution in InN nanowires: Influence on the optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Molina-Sanchez, A.; Garro, N.; Garcia-Cristobal, A.; Cantarero, A. [Instituto de Ciencia de los Materiales, Universidad de Valencia (Spain); Segura-Ruiz, J. [European Synchrotron Radiation Facility, Experiments Div., Grenoble (France); Iikawa, F. [Instituto de Fisica Gleb Wataghin - Unicamp, CP 6165, Campinas (Brazil); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

    2012-03-15

    In this work, we study theoretically and experimentally the influence of the surface electron accumulation on the optical properties of InN nanowires. For this purpose, the photoluminescence and photoluminescence excitation spectra have been measured for a set of self-assembled InN NWs grown under different conditions. The photoluminescence excitation experimental lineshapes have been reproduced by a self-consistent calculation of the absorption in a cylindrical InN nanowires. With the self-consistent model we can explore how the optical absorption depends on nanowires radius and doping concentration. Our model solves the Schroedinger equation for a cylindrical nanowire of infinite length, assuming a parabolic conduction band. The columnar geometry introduces effects in both the electron density and in the self-consistent conduction band profile, with no equivalence in planar layer. On the other hand, the differences in the photoluminescence excitation spectra are related to the inhomogeneous electron distribution inside the nanowires, caused by a bulk donor concentration and a two-dimensional density of ionized surface states. For nanowire radii larger than 30 nm, such concentrations modify the absorption edge and the lineshape, respectively, and can be determined from the comparison with the experimental data (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. First-principles study of Mg incorporation at wurtzite InN (0 0 0 1) and (0001-bar) surfaces

    International Nuclear Information System (INIS)

    Ding, S.F.; Qu, X.P.; Fan, G.H.

    2009-01-01

    In this article we investigate the energetics of Mg adsorption and incorporation at the InN(0 0 0 1) and InN(0001-bar) surfaces by the method of total energy plane-wave expansions with ultra-soft pseudo potential technology based on the density functional theory (DFT) in the generalized approximation (GGA). It is found that for a 1/4 monolayer (ML) coverage of the InN(0 0 0 1) surface, Mg atoms preferentially adsorb at the bridge sites and T4 sites, but they are unstable when compared with Mg incorporated in the first three layers. For a 1/4 ML coverage of the InN(0001-bar) surface, Mg atoms preferentially adsorb at the H3 sites with the formation energy of -3.49 (eV/(2x2) supercell), which is lower than that of the T4 sites, and the formation energy increases with increasing magnesium coverage. Further study shows that the formation energy for Mg atom is lower than that of In atom, which indicates that magnesium adsorption is more favorable in these conditions.

  3. “The movies had not prepared him for this Teutonic version here”: The Significance of the Hansel and Gretel Fairy Tale in Thomas Pynchon’s Gravity’s Rainbow

    Directory of Open Access Journals (Sweden)

    Anahita Rouyan

    2013-11-01

    Full Text Available Among the cultural texts used by Thomas Pynchon in 'Gravity’s Rainbow' (1973 figures a classic fairy tale of “Hansel and Gretel”. It is here that the author initially develops the theme of bad parents and victimized children, a subject elaborated throughout 'Gravity’s Rainbow'. By placing the fairy tale in a broader framework of Teutonic mythology, with its heathen gods and goddesses, Pynchon demonstrates the workings of cultural conditioning not only on individual characters, but also on narratives initially unfit in the dominant culture. The theme of “Hansel and Gretel” refers to one of the central questions of 'Gravity’s Rainbow' as well, that of the possibility of freedom for a culturally conditioned entity, be it an individual or a narrative.

  4. R&W Club Frederick Raises $1,500 for The Children’s Inn at Annual Golf Tournament | Poster

    Science.gov (United States)

    Forty-four government and contractor employees, along with their friends and family members, took to the Maryland National Golf Club course this fall for a cause. The R&W Club Frederick held its third annual golf tournament at the Middletown, Md., golf course on Sept. 14 to raise funds for The Children’s Inn at NIH, which celebrated its 25th anniversary this year. The Inn

  5. "Could I return to my life?" Integrated Narrative Nursing Model in Education (INNE).

    Science.gov (United States)

    Artioli, Giovanna; Foà, Chiara; Cosentino, Chiara; Sulla, Francesco; Sollami, Alfonso; Taffurelli, Chiara

    2018-03-28

    The Integrated Narrative Nursing Model (INNM) is an approach that integrates the qualitative methodology typical of the human sciences, with the quantitative methodology more often associated with the natural sciences. This complex model, which combines a focus on narrative with quantitative measures, has recently been effectively applied to the assessment of chronic patients. In this study, the model is applied to the planning phase of education (Integrated Narrative Nursing Education, INNE), and proves to be a valid instrument for the promotion of the current educational paradigm that is centered on the engagement of both the patient and the caregiver in their own path of care. The aim of this study is therefore to describe the nurse's strategy in the planning of an educational intervention by using the INNE model. The case of a 70-year-old woman with pulmonary neoplasm is described at her first admission to Hospice. Each step conducted by the reference nurse, who uses INNE to record the nurse-patient narrative and collect subsequent questionnaires in order to create a shared educational plan, is also described. The information collected was submitted, starting from a grounded methodology to the following four levels of analysis: I. Needs Assessment, II. Narrative Diagnosis, III. Quantitative Outcome, IV. Integrated Outcome. Step IV, which is derived from the integration of all levels of analysis, allows a nurse to define, even graphically, the conceptual map of a patient's needs, resources and perspectives, in a completely tailored manner. The INNE model offers a valid methodological support for the professional who intends to educate the patient through an inter-subjective and engaged pathway, between the professional, their patient and the socio-relational context. It is a matter of adopting a complex vision that combines processes and methods that require a steady scientific basis and advanced methodological expertise with active listening and empathy

  6. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tuna, Oecal

    2013-07-18

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH{sub 3} relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH{sub 3} dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques

  7. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuna, Oecal

    2013-01-01

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

  8. Observation of complete oxidation of InN to In2O3 in air at elevated temperatures by using X-ray photoemission spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ik-Jae; Yu, Chung-Jong; Hur, Tae-Bong; Kim, Hyung-Kook; Kim, Chae-Ok; Kim, Jae-Yong

    2006-01-01

    We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures. The analysis of the X-ray diffraction data demonstrated that the oxidation process started around 450 .deg. C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while the In3d peaks had not changed. These results strongly indicate that the oxidation transformed the structure of InN film to In 2 O 3 .

  9. High temperature electron cyclotron resonance etching of GaN, InN, and AlN

    International Nuclear Information System (INIS)

    Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

    1995-01-01

    Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

  10. Healers, deities, saints and doctors: elements for the analysis of medical systems.

    Science.gov (United States)

    Pedersen, D; Baruffati, V

    1989-01-01

    This article provides the basic elements for the discussion and analysis of medical systems and their inter-dependency, with special reference to Latin America and, in particular, to the Andean countries. In a culturally diverse and socially stratified population, such as in contemporary Latin America, medical systems constitute a social representation resulting from the historical relationship between autochtonous medical cultures and those from other latitudes. The impregnation of scientific and popular knowledge results not only in the incorporation (and often expropriation) of folk in professional or scientific medicine, but also in the increasing 'medicalisation' of popular and traditional therapeutic practices. The emergent 'popular' medical system draws from both the professional and folk models, and in its actual practice, integrates both popular beliefs and materia medica with elements drawn from popular religions and pre-Hispanic deities. The degree of competitiveness, co-operation or 'integration' among medical systems depends mainly on the asymmetrical distribution of power and resources, and is conditioned by the population's behaviour in the management of disease. Existing pluralist systems of health care reveal a valuable array of survival strategies, which far outreach the proposals for integration called for by official sectors. On the other hand, knowledge derived from traditional medicine can contribute to the development of new models of clinical practice and to the expansion of the conventional epidemiological model.

  11. Surface acoustic waves and elastic constants of InN epilayers determined by Brillouin scattering

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Rioboo, R.J.; Prieto, C. [Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid (Spain); Cusco, R.; Domenech-Amador, N.; Artus, L. [Institut Jaume Almera, Consell Superior d' Investigacions Cientifiques (CSIC), Lluis Sole i Sabaris s.n., Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Noji-Higashi, Kusatsu, Shiga (Japan)

    2012-06-15

    The surface acoustic wave velocity in InN has been experimentally determined by means of Brillouin scattering experiments on c - and m -face epilayers. From simulations based on the Green's function formalism we determine the shear elastic constants c{sub 66} and c{sub 44} and propose a complete set of elastic constants for wurtzite InN. The analysis of the sagittal and azimuthal dependence of the surface acoustic wave velocity indicates a slightly different elastic behavior of the m -face sample that basically affects the c{sub 44} elastic constant. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Formation of InN atomic-size wires by simple N adsorption on the In/Si(111)–(4 × 1) surface

    International Nuclear Information System (INIS)

    Guerrero-Sánchez, J.; Takeuchi, Noboru

    2016-01-01

    Highlights: • N atoms on the surface form bonds with two In atoms and one Si atom. • Surface formation energy calculations show two stable structures with formation of InN atomic-size wires. • Projected density of states shows a tendency to form In−N and Si−N bonds on the surface. • Charge density corroborates the covalent character of the In−N bonds. - Abstract: We have carried out first principles total energy calculations to study the formation of InN atomic-size wires on the In/Si(111)–(4 × 1) surface. In its most favorable adsorption site, a single N atom forms InN arrangements. The deposit of 0.25 monolayers (MLs) of N atoms, result in the breaking of one of the original In chains and the formation of an InN atomic size wire. Increasing the coverage up to 0.5 ML of N atoms results in the formation of two of those wires. Calculated surface formation energies show that for N-poor conditions the most stable configuration is the original In/Si(111)–(4 × 1) surface with no N atoms. Increasing the N content, and in a reduced range of chemical potential, the formation of an InN wire is energetically favorable. Instead, from intermediate to N-rich conditions, two InN atomic wires are more stable. Projected density of states calculations have shown a trend to form covalent bonds between the In−p and N−p orbitals in these stable models.

  13. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Anyebe, E A; Zhuang, Q; Kesaria, M; Krier, A

    2014-01-01

    We report the catalyst free growth of wurtzite InN nanorods (NRs) and microislands on bare Si (111) by plasma-assisted molecular beam epitaxy at various temperatures. The morphological evolution from NRs to three dimensional (3D) islands as a function of growth temperature is investigated. A combination of tapered, non-tapered, and pyramidal InN NRs are observed at 490 °C, whereas the InN evolves to faceted microislands with an increase in growth temperature to 540 °C and further developed to indented and smooth hemispherical structures at extremely high temperatures (630 °C). The evolution from NRs to microislands with increase in growth temperature is attributed to the lowering of the surface free energy of the growing crystals with disproportionate growth velocities along different growth fronts. The preferential adsorption of In atoms on the (0001) c-plane and (10-10) m-plane promotes the growth of NRs at relatively low growth temperature and 3D microislands at higher temperatures. The growth rate imbalance along different planes facilitates the development of facets on 3D microislands. A strong correlation between the morphological and structural properties of the 3D films is established. XRD studies reveal that the NRs and the faceted microislands are crystalline, whereas the hemispherical microislands grown at extremely high growth temperature contain In adlayers. Finally, photoluminescent emissions were observed at ∼0.75 eV from the InN NRs. (paper)

  14. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    Science.gov (United States)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  15. Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

    2013-01-01

    The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

  16. X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

    Science.gov (United States)

    Moret, Matthieu; Briot, Olivier; Gil, Bernard

    2015-03-01

    Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

  17. A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

    Science.gov (United States)

    Kao, Kun-Wei; Hsu, Ming-Che; Chang, Yuh-Hwa; Gwo, Shangjr; Yeh, J. Andrew

    2012-01-01

    An indium nitride (InN) gas sensor of 10 nm in thickness has achieved detection limit of 0.4 ppm acetone. The sensor has a size of 1 mm by 2.5 mm, while its sensing area is 0.25 mm by 2 mm. Detection of such a low acetone concentration in exhaled breath could enable early diagnosis of diabetes for portable physiological applications. The ultrathin InN epilayer extensively enhances sensing sensitivity due to its strong electron accumulation on roughly 5–10 nm deep layers from the surface. Platinum as catalyst can increase output current signals by 2.5-fold (94 vs. 37.5 μA) as well as reduce response time by 8.4-fold (150 vs. 1,260 s) in comparison with bare InN. More, the effect of 3% oxygen consumption due to breath inhalation and exhalation on 2.4 ppm acetone gas detection was investigated, indicating that such an acetone concentration can be analyzed in air. PMID:22969342

  18. The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

    International Nuclear Information System (INIS)

    Wang, H; Jiang, D S; Zhu, J J; Zhao, D G; Liu, Z S; Wang, Y T; Zhang, S M; Yang, H

    2009-01-01

    The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 °C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 °C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved

  19. Conservation of the Sinclair Inn Museum, and the Painted Room Annapolis Royal, Nova Scotia, Canada

    Science.gov (United States)

    Shaftel, A.; Ward, J.

    2017-08-01

    Conservation of the historic 18thC. Sinclair Inn Museum, and of the recently discovered late 18th/early 19thC. unique panoramic wall paintings located in an upstairs room, are co-dependent. This project was carried out with Canadian Conservation Institute (CCI) staff, and Conservator in Private Practice Ann Shaftel. This paper will introduce the Sinclair Inn Museum, outline the CCI murals and building investigations of 2011-15, the mural investigation of 2015-16, which confirmed that the mural extended to all four walls of the function room, now referred to as the Painted Room, and to describe how it has been revealed and conserved to date.

  20. Auger recombination as the dominant nonradiative recombination channel in InN

    NARCIS (Netherlands)

    Cho, Y.; Lue, X.; Wienold, M.; Ramsteiner, M.; Grahn, H.T.; Brandt, O.

    2013-01-01

    We investigate the dependence of the photoluminescence intensity of degenerately doped (6×10 17 -to1×10 20 -cm -3 ) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by

  1. Golf Tournament Drives in a Win for the Children’s Inn | Poster

    Science.gov (United States)

    By Carolynne Keenan, Contributing Writer On September 23, golfers took to the Clustered Spires golf course in Frederick, Md., for a cause. The R&W Club Frederick hosted its inaugural golf tournament, with proceeds benefiting the National Institutes of Health (NIH) Children’s Inn.

  2. A Dance Class, a Drag King, & the Pedagogical Possibilities of Performative Hip-Hop: An Interview with Carmen Morrison & Alex U. Inn

    Science.gov (United States)

    Schönfeldt-Aultman, Scott M.; Morrison, Carmen

    2015-01-01

    Alex U. Inn is the co-founder and one of the two MCs of the hip-hop drag king group, Momma's Boyz. Momma's Boyz celebrated their tenth anniversary in 2014. Carmen Morrison is the offstage name of Alex U. Inn, though "Carmen" now goes by Alex offstage, as well. Within this interview, the names "Carmen" and "Alex" are…

  3. Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra

    International Nuclear Information System (INIS)

    Katsidis, C. C.; Ajagunna, A. O.; Georgakilas, A.

    2013-01-01

    Fourier Transform Infrared (FTIR) reflectance spectroscopy has been implemented as a non-destructive, non-invasive, tool for the optical characterization of a set of c-plane InN single heteroepitaxial layers spanning a wide range of thicknesses (30–2000 nm). The c-plane (0001) InN epilayers were grown by plasma-assisted molecular beam epitaxy (PAMBE) on GaN(0001) buffer layers which had been grown on Al 2 O 3 (0001) substrates. It is shown that for arbitrary multilayers with homogeneous anisotropic layers having their principal axes coincident with the laboratory coordinates, a 2 × 2 matrix algebra based on a general transfer-matrix method (GTMM) is adequate to interpret their optical response. Analysis of optical reflectance in the far and mid infrared spectral range has been found capable to discriminate between the bulk, the surface and interface contributions of free carriers in the InN epilayers revealing the existence of electron accumulation layers with carrier concentrations in mid 10 19 cm −3 at both the InN surface and the InN/GaN interface. The spectra could be fitted with a three-layer model, determining the different electron concentration and mobility values of the bulk and of the surface and the interface electron accumulation layers in the InN films. The variation of these values with increasing InN thickness could be also sensitively detected by the optical measurements. The comparison between the optically determined drift mobility and the Hall mobility of the thickest sample reveals a value of r H = 1.49 for the Hall factor of InN at a carrier concentration of 1.11 × 10 19 cm −3 at 300°Κ.

  4. Effects of GaN capping on the structural and the optical properties of InN nanostructures grown by using MOCVD

    International Nuclear Information System (INIS)

    Sun, Yuanping; Cho, Yonghoon; Wang, Hui; Wang, Lili; Zhang, Shuming; Yang, Hui

    2010-01-01

    InN nanostructures with and without GaN capping layers were grown by using metal-organic chemical vapor deposition. Morphological, structural, and optical properties were systematically studied by using atomic force microscopy, X-ray diffraction (XRD) and temperature-dependent photoluminescence (PL). XRD results show that an InGaN structure is formed for the sample with a GaN capping layer, which will reduce the quality and the IR PL emission of the InN. The lower emission peak at ∼0.7 eV was theoretically fitted and assigned as the band edge emission of InN. Temperature-dependent PL shows a good quantum efficiency for the sample without a GaN capping layers; this corresponds to a lower density of dislocations and a small activation energy.

  5. Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

    International Nuclear Information System (INIS)

    Winden, A; Mikulics, M; Grützmacher, D; Hardtdegen, H

    2013-01-01

    Important technological steps are discussed and realized for future room-temperature operation of III-nitride single photon emitters. First, the growth technology of positioned single pyramidal InN nanostructures capped by Mg-doped GaN is presented. The optimization of their optical characteristics towards narrowband emission in the telecommunication wavelength range is demonstrated. In addition, a device concept and technology was developed so that the nanostructures became singularly addressable. It was found that the nanopyramids emit in the telecommunication wavelength range if their size is chosen appropriately. A p-GaN contacting layer was successfully produced as a cap to the InN pyramids and the top p-contact was achievable using an intrinsically conductive polymer PEDOT:PSS, allowing a 25% increase in light transmittance compared to standard Ni/Au contact technology. Single nanopyramids were successfully integrated into a high-frequency device layout. These decisive technology steps provide a promising route to electrically driven and room-temperature operating InN based single photon emitters in the telecommunication wavelength range. (paper)

  6. Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

    2016-01-01

    The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  7. Quasi-two-dimensional superconductivity in wurtzite-structured InN films

    International Nuclear Information System (INIS)

    Ling, D.C.; Cheng, J.H.; Lo, Y.Y.; Du, C.H.; Chiu, A.P.; Chang, P.H.; Chang, C.A.

    2007-01-01

    C-axis oriented InN films with wurtzite structure were grown on sapphire(0001) substrate by MOCVD method. Superconductivity with transition onset temperature T c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1 x 10 19 cm -3 to 7 x 10 20 cm -3 . Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR/R∝(H/R) 2 , indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H c2 ab (0) and H c2 c (0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

    OpenAIRE

    Ángel Guillermo Félix Mendoza; Danny Daniel Cobeña López; Lisbeth Alexandra Párraga Muñoz; Lorena Carreño Mendoza

    2015-01-01

    El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores...

  9. Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique

    Science.gov (United States)

    Barick, B. K.; Saroj, Rajendra Kumar; Prasad, Nivedita; Sutar, D. S.; Dhar, S.

    2018-05-01

    Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [ 1 1 2 bar 0 ] and [0 0 0 1] directions leading to the formation of such a network structure, where the vertically [0 0 0 1] oriented tapered walls are laterally align along one of the three [ 1 1 2 bar 0 ] directions. Inclined facets of these walls are identified as semipolar (1 1 2 bar 2) -planes of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the surface of the side facets [(1 1 2 bar 2) -planes] of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.

  10. 2nd INNS Conference on Big Data

    CERN Document Server

    Manolopoulos, Yannis; Iliadis, Lazaros; Roy, Asim; Vellasco, Marley

    2017-01-01

    The book offers a timely snapshot of neural network technologies as a significant component of big data analytics platforms. It promotes new advances and research directions in efficient and innovative algorithmic approaches to analyzing big data (e.g. deep networks, nature-inspired and brain-inspired algorithms); implementations on different computing platforms (e.g. neuromorphic, graphics processing units (GPUs), clouds, clusters); and big data analytics applications to solve real-world problems (e.g. weather prediction, transportation, energy management). The book, which reports on the second edition of the INNS Conference on Big Data, held on October 23–25, 2016, in Thessaloniki, Greece, depicts an interesting collaborative adventure of neural networks with big data and other learning technologies.

  11. In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

    Science.gov (United States)

    Suzuki, Akira; Bungi, Yu; Araki, Tsutomu; Nanishi, Yasushi; Mori, Yasuaki; Yamamoto, Hiroaki; Harima, Hiroshi

    2009-05-01

    To improve crystal quality of InN, an in-situ cyclic rapid pulse annealing during growth was carried out using infrared-lamp-heated molecular beam epitaxy. A cycle of 4 min growth of InN at 400 °C and 3 s pulse annealing at a higher temperature was repeated 15 times on AlN on Si substrate. Annealing temperatures were 550, 590, 620, and 660 °C. The back of Si was directly heated by lamp irradiation through a quartz rod. A total InN film thickness was about 200 nm. With increasing annealing temperature up to 620 °C, crystal grain size by scanning electron microscope showed a tendency to increase, while widths of X-ray diffraction rocking curve of (0 0 0 2) reflection and E 2 (high) mode peak of Raman scattering spectra decreased. A peak of In (1 0 1) appeared in X-ray diffraction by annealing higher than 590 °C, and In droplets were found on the surface by annealing at 660 °C.

  12. Minibaaritoiminnan kehittäminen Holiday Inn Helsinki-Vantaa Airportissa

    OpenAIRE

    Raunio, Reijo

    2009-01-01

    Tämä tutkimustyyppinen opinnäytetyö käsittelee Restel Oy:n operoiman Holiday Inn Helsinki-Vantaa Airportin minibaaritoiminnan kehittämistä. Työn on tarkoitus toimia hotellin johdon apuvälineenä pohdittaessa toimenpiteitä, joilla voitaisiin tehostaa minibaaritoiminnan tuottoja ja parantaa sen kannattavuutta. Koska kannattavuuden käsitteen avaamiselle syntyy näin ollen olennainen tarve, se saa pääroolin viitekehyksessä. Kannattavuuden osalta käsitellään paitsi sen yleistä määrittelyä myös ...

  13. Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, Tokuo; Yona, Hiroaki; Ando, Hironori; Nosei, Daiki; Harada, Yoshiyuki

    2002-01-01

    We observed strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick InN buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy. The InN film on the Si(001) substrate exhibited strong band edge photoluminescence (PL) emission at 1.814 eV at 8.5 K, tentatively assigned as donor to acceptor pair [DAP (α-InN)] emission from wurtzite-InN (α-InN) crystal grains, while those on Si(111) showed other stronger band edge PL emissions at 1.880, 2.081 and 2.156 eV, tentatively assigned as donor bound exciton [D 0 X(α-InN)] from α-InN grains, DAP (β-InN) and D 0 X (β-InN) emissions from zinc blende-InN (β-InN) grains, respectively

  14. Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

    International Nuclear Information System (INIS)

    Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

    2000-01-01

    Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

  15. An Analysis of Open-Ended Online Reviews about Bed and Breakfast and Inns in Portugal

    Directory of Open Access Journals (Sweden)

    Sara Evans Machado dos Santos

    2014-03-01

    Full Text Available Researches about User-Generated Content (UGC have gained attention in the fields of Tourism and Hospitality in the last years. This study focus on online reviews about alternative accommodations – B&Bs and Inns. The development of this work was realized applying inductive methods and using an exploratory approach. We collected a sample of 450 online reviews and analyzed them segment by segment, making a total of 4621 segments. We used the Appraisal Theory to assess what attitudes online reviewers are expressing about B&Bs and Inns in Lisbon. We verified that positive appreciation is the most frequent attitude while expressions of affect and judgment are more rare. This study contributes to the academy as it brings a new parameter of analysis of UGC using the Appraisal Theory in the field of Hospitality.

  16. Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

    International Nuclear Information System (INIS)

    Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N.; Rajpalke, Mohana K.; Sinha, Neeraj; Kalghatgi, A. T.; Krupanidhi, S. B.

    2011-01-01

    One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (∼8%), the dots formed from the Strannski–Krastanow (S–K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

  17. Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

    Energy Technology Data Exchange (ETDEWEB)

    Penner, J

    2007-12-20

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

  18. Structural and magnetic properties of Cr and Mn doped InN

    International Nuclear Information System (INIS)

    Ney, A.; Rajaram, R.; Arenholz, E.; Harris, J.S.; Samant, M.; Farrow, R.F.C.; Parkin, S.S.P.

    2006-01-01

    We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior

  19. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

    2017-03-13

    The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

  20. HOUSE DUST MITE CONTAMINATION IN HOTELS AND INNS IN BANDAR ABBAS, SOUTH OF IRAN

    Directory of Open Access Journals (Sweden)

    M. Soleimani, J. Rafinejad

    2008-07-01

    Full Text Available House dust mites have been shown to be strongly associated with allergic respiratory diseases such as, bronchial asthma, rhinitis and atopic dermatitis in the world. The climatic conditions of Bandar-Abbas, which is located in a coastal area and has a humid subtropical climate, provide a suitable place to proliferate mites. The aim of this study was to determine the contamination rate and analyze the house dust mite fauna in hotels and inns in Bandar-Abbas that had not been investigated previously. In this study 6 hotels and 6 inns were selected randomly in six areas of Bandar-Abbas. Two dust samples were collected from each place with a vacuum cleaner. One square meter of carpets and mattresses were vacuumed for a period of 1 min. Then the samples were cleared in lactic acid and then mites were mounted in Hoyer's medium for study and identification. A total of 2644 mites were collected and identified. The major mite family was Pyroglyphidae (98%. Dermatophagoides pteronyssinus was the most frequent and most numerous species recorded, occurring in 91% of samples examined and forming 88% of the Pyroglyphidae and 86% of the total mite populations. The family Cheyletidae was less commonly found with Cheyletus malaccensis (2%. Most of the mites were isolated from the carpets (57.5%, and a smaller number from mattresses (42.5%. Mites were present in 96% of the dust samples. Results revealed that all inns and 83% of hotels were contaminated by more than one species of mite and 34% of them had a population of more than 100 mites /g dust. This rate of contamination can be a major risk factor in asthma and other respiratory allergic diseases

  1. High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

    International Nuclear Information System (INIS)

    Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

    2014-01-01

    High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

  2. A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

    International Nuclear Information System (INIS)

    Hashimoto, A.; Iwao, K.; Yamamoto, A.

    2008-01-01

    In the InN growth on sapphire substrates, it is difficult to control both of tilt and twist angle fluctuations at same time. It is necessary to understand initial growth stage such as the role of nitridation process to improve the mosaicity. Low-temperature nitridation technique brings the drastically improvement of the tilt angle fluctuation, although the twist angle fluctuation becomes worse. Such experimental results strongly indicate that there is some trade-off relation between the tilt and the twist angle fluctuations as a function of the nitridation condition such as the nitridation time. In this paper, we discuss about such trade-off relation in the direct growth of InN on the nitridation sapphire substrates and also propose a simple model of initial nitridation process to explain it. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

    International Nuclear Information System (INIS)

    Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S.

    2007-01-01

    The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for 1 ML InN insertion can be remarkably higher, the proposed MQW structure can avoid/reduce generation of misfit dislocation, resulting in higher quality MQW-structure nature in principle than former InN-based MQWs. The proposed InN/GaN MQWs are potentially applicable to room temperature operating excitonic devices working in short-wavelength visible colors

  4. Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

    International Nuclear Information System (INIS)

    Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

    2010-01-01

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  5. Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

    International Nuclear Information System (INIS)

    Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

    2010-01-01

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  6. Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

    Science.gov (United States)

    Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

    2010-08-06

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  7. High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

    Energy Technology Data Exchange (ETDEWEB)

    Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

    2014-05-12

    High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

  8. R&W Club Frederick Hosts Second Annual Golf Tourney for The Children’s Inn | Poster

    Science.gov (United States)

    By Carolynne Keenan, Contributing Writer On Sept. 8, more than 40 NCI at Frederick and Leidos Biomedical Research employees, along with family and friends, swapped work clothes for golf gear at Maryland National Golf Club in Middletown. The golfers didn’t just play for fun; they participated in the second annual R&W Club Frederick Golf Tournament to support The Children’s Inn

  9. Theoretical investigation on structural stability of InN thin films on 3C-SiC(0 0 1)

    International Nuclear Information System (INIS)

    Ito, Takumi; Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori

    2008-01-01

    The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate

  10. Local lattice environment of indium in GaN, AlN, and InN

    International Nuclear Information System (INIS)

    Penner, J.

    2007-01-01

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

  11. Determination of the Mg occupation site in MOCVD- and MBE-grown Mg-doped InN using X-ray absorption fine-structure measurements

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Uemura, Shigeaki; Kudo, Yoshihiro [Materials Laboratories, Sony Corporation, Atsugi, Kanagawa (Japan); Kitajima, Yoshinori [Photon Factory, High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan); Yamamoto, Akio [Graduate School of Engineering, University of Fukui, Fukui (Japan); Muto, Daisuke; Nanishi, Yasushi [Department of Photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577 (Japan)

    2008-07-01

    We analyzed the atomic structure around Mg atoms in MOCVD- and MBE-grown Mg-doped InN using Mg K-edge X-ray absorption fine-structure (XAFS) measurements. Our experimental data closely fit to the simulated data in which Mg atoms occupy the substitutional sites of In atoms. From this result, we conclude that Mg atoms essentially occupy not N atoms sites but In atoms sites, meaning that Mg atoms can act as acceptors in InN. We believe that observations of p-type conductivity are prevented by problems such as carrier compensation and electron accumulation at the surface. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

    International Nuclear Information System (INIS)

    Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

    1996-01-01

    The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

  13. Influences of residual oxygen impurities, cubic indium oxide grains and indium oxy-nitride alloy grains in hexagonal InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yodo, T.; Nakamura, T.; Kouyama, T.; Harada, Y.

    2005-01-01

    We investigated the influences of residual oxygen (O) impurities, cubic indium oxide (β-In 2 O 3 ) grains and indium oxy-nitride (InON) alloy grains in 200 nm-thick hexagonal (α)-InN crystalline films grown on Si(111) substrates by electron cyclotron resonance plasma-assisted molecular beam epitaxy. Although β-In 2 O 3 grains with wide band-gap energy were formed in In film by N 2 annealing, they were not easily formed in N 2 -annealed InN films. Even if they were not detected in N 2 -annealed InN films, the as-grown films still contained residual O impurities with concentrations of less than 0.5% ([O]≤0.5%). Although [O]∝1% could be estimated by investigating In 2 O 3 grains formed in N 2 -annealed InN films, [O]≤0.5% could not be measured by it. However, we found that they can be qualitatively measured by investigating In 2 O 3 grains formed by H 2 annealing with higher reactivity with InN and O 2 , using X-ray diffraction and PL spectroscopy. In this paper, we discuss the formation mechanism of InON alloy grains in InN films. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

    International Nuclear Information System (INIS)

    Segura-Ruiz, J.; Cantarero, A.; Garro, N.; Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A.

    2008-01-01

    InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E 2 h mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Photoluminescence and Raman spectroscopy of MBE-grown InN nanocolumns

    Energy Technology Data Exchange (ETDEWEB)

    Segura-Ruiz, J.; Cantarero, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Garro, N. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Fundacio General de la Universitat de Valencia, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Denker, C.; Werner, F.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August Universitaet Goettingen (Germany)

    2008-07-01

    InN nanocolumns grown under different conditions by plasma-assisted molecular beam epitaxy on p-Si (111) substrates are studied by micro-Raman and photoluminescence (PL) spectroscopies. The nanocolumns are free of strain and have an improved crystal quality as shown by the frequency and linewidth of the nonpolar E{sub 2}{sup h} mode. Uncoupled polar modes coexist with a couple LO phonon-plasmon mode and are sensitive to the nanocolumn morphology. Variations in the growth conditions also modify the PL spectra significantly. An increase in the PL energy also involves a reduction of the integrated intensity and an increase of the PL linewidth. This overall phenomenology highlights the role of the surface accumulation layer in these nanostructures. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Solar hot water system installed at Quality Inn, Key West, Florida

    Science.gov (United States)

    1980-04-01

    The solar energy hot water system installed in the Quality Inn, Key West, Florida, which consists of four buildings is described. Three buildings are low-rise, two-story buildings containing 100 rooms. The fourth is a four-story building with 48 rooms. The solar system was designed to provide approximately 50 percent of the energy required for the domestic hot water system. The solar system consists of approximately 1400 square feet of flat plate collector, two 500 gallon storage tanks, a circulating pump, and a controller. Operation of the system was begun in April 1978, and has continued to date with only three minor interruptions for pump repair. In the first year of operation, it was determined that the use of the solar facility resulted in forty percent fuel savings.

  17. Study of Stark Effect in n-doped 1.55 μm InN0.92yP1-1.92yBiy/InP MQWs

    Science.gov (United States)

    Bilel, C.; Chakir, K.; Rebey, A.; Alrowaili, Z. A.

    2018-05-01

    The effect of an applied electric field on electronic band structure and optical absorption properties of n-doped InN0.92y P1-1.92y Bi y /InP multiple quantum wells (MQWs) was theoretically studied using a self-consistent calculation combined with the 16-band anti-crossing model. The incorporation of N and Bi atoms into an InP host matrix leads to rapid reduction of the band gap energy covering a large infrared range. The optimization of the well parameters, such as the well/barrier widths, N/Bi compositions and doping density, allowed us to obtain InN0.92y P1-1.92y Bi y /InP MQWs operating at the wavelength 1.55 μm. Application of the electric field causes a red-shift of the fundamental transition energy T 1 accompanied by a significant change in the spatial distribution of confined electron density. The Stark effect on the absorption coefficient of n-doped InN0.92y P1-1.92y Bi y /InP MQWs was investigated. The Bi composition of these MQWs was adjusted for each electric field value in order to maintain the wavelength emission at 1.55 μm.

  18. R&W Club Frederick Hosts 4th Annual Golf Tournament Benefiting The Children’s Inn at NIH | Poster

    Science.gov (United States)

    The R&W Club Frederick’s 4th Annual Golf Tournament to benefit the Children’s Inn at NIH teed off on time despite cloudy weather and scattered showers. Employees from NCI at Frederick, the main NIH campus, and Leidos Biomed, along with family and friends, came to enjoy an afternoon at the beautiful Maryland National Golf Club in Middletown and to support a wonderful charity.

  19. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  20. Magnetic-field and temperature dependence of the energy gap in InN nanobelt

    Directory of Open Access Journals (Sweden)

    K. Aravind

    2012-03-01

    Full Text Available We present tunneling measurements on an InN nanobelt which shows signatures of superconductivity. Superconducting transition takes place at temperature of 1.3K and the critical magnetic field is measured to be about 5.5kGs. The energy gap extrapolated to absolute temperature is about 110μeV. As the magnetic field is decreased to cross the critical magnetic field, the device shows a huge zero-bias magnetoresistance ratio of about 400%. This is attributed to the suppression of quasiparticle subgap tunneling in the presence of superconductivity. The measured magnetic-field and temperature dependence of the superconducting gap agree well with the reported dependences for conventional metallic superconductors.

  1. Identifying Sustainable Design Opportunities in Tribal Hotels and Casinos: Mescalero Inn of the Mountain Gods Hotel and Casino

    Energy Technology Data Exchange (ETDEWEB)

    Fuller, Diana [Univ. of Illinois, Springfield, IL (United States); Martino, Anthony [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies; Begay, Sandra K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Materials, Devices, & Energy Technologies

    2016-10-01

    The Indian Gaming Regulatory Act, passed by Congress on October 17, 1988 provided tribes with the Federal statute to pursue gaming activities on tribal lands. Many Native communities contribute to larger regional economies and tourism industries. These casino facilities often include resort-style hotel amenities. Not surprisingly, they are also large consumers of energy, operating 24 hours a day and 7 days a week. Tribes with hotels and casinos can implement sustainable design features and not only receive economic gain, but also environmental and community benefits. The intention of this paper is to identify sustainable design opportunities at the Inn of the Mountain Gods Hotel and Casino. This research stems from previous work the researcher conducted and subsequently published for the Illinois Green Business Association. First, the paper reviews what sustainable design is and points of interest when considering sustainable construction. Next, the paper explores the precedents set by the Blue Lake Rancheria, Rincon Band of Luiseno Indians, and the Forest County Potawatomi Tribe. Then, the research examines areas to collect baseline information and identify opportunities in sustainable design for the Mescalero Apache Tribe, Inn of the Mountain Gods Hotel and Casino located in New Mexico. Lastly, the work explores the resources and funding options available to the tribe.

  2. Abstracts. 1978 AFOSR Contractors Meeting on Air-Breathing Combustion Dynamics and Kinetics, Ramada Inn-Downtown Dayton, Ohio, 10 - 13 October 1978

    Science.gov (United States)

    1978-10-13

    Combustion in G.D. Smith, C.E. Peters High Speed Flows AEDC/ARO (PO-78-0012) 5:00 ADJOURN 6:30 Social Hour (Cash Bar) Ramada Inn Banquet 12 Oct. 78...which would sustain the instability structures observed in a number of problemA . During the initial phase of the development of the instabilities, the

  3. Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy

    International Nuclear Information System (INIS)

    Ooi, P.K.; Lee, S.C.; Ng, S.S.; Hassan, Z.; Abu Hassan, H.; Chen, W.L.

    2011-01-01

    Room temperature polarized infrared reflectance technique is employed to study the optical properties of wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy. The reflection spectra are compared to the calculated spectra generated based on the anisotropic dielectric function model. Good agreement between the measured and calculated spectra is obtained. From the fit of the experimental curve, the reststrahlen parameters at the center of Brillouin zone, the carrier concentration and mobility as well as the epilayers thicknesses are determined. The values of the carrier concentration and mobility are in good agreement with the results obtained from the Hall effects measurements.

  4. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  5. Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

    Science.gov (United States)

    Segura-Ruiz, J.; Garro, N.; Cantarero, A.; Denker, C.; Malindretos, J.; Rizzi, A.

    2009-03-01

    Vertically self-aligned InN nanocolumns have been investigated by means of scanning electron microscopy, Raman scattering, and photoluminescence spectroscopy. Different nanocolumn morphologies corresponding to different molecular beam epitaxy growth conditions have been studied. Raman spectra revealed strain-free nanocolumns with high crystalline quality for the full set of samples studied. Longitudinal optical modes both uncoupled and coupled to an electron plasma coexist in the Raman spectra pointing to the existence of two distinctive regions in the nanocolumn: a surface layer of degenerated electrons and a nondegenerated inner core. The characteristics of the low-temperature photoluminescence and its dependence on temperature and excitation power can be explained by a model considering localized holes recombining with degenerated electrons close to the nonpolar surface. The differences observed in the optical response of different samples showing similar crystalline quality have been attributed to the variation in the electron accumulation layer with the growth conditions.

  6. Phase mapping of aging process in InN nanostructures: oxygen incorporation and the role of the zinc blende phase

    International Nuclear Information System (INIS)

    Gonzalez, D; Lozano, J G; Herrera, M; Morales, F M; GarcIa, R; Ruffenach, S; Briot, O

    2010-01-01

    Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by transmission electron microscopy (TEM)-related techniques. The parent wurtzite InN (InN-w) phase disappears from the surface and gradually forms a highly textured cubic layer that completely wraps up a InN-w nucleus which still remains from the original single-crystalline quantum dots. The good reticular relationships between the different crystals generate low misfit strains and explain the apparent easiness for phase transformations at room temperature and pressure conditions, but also disable the classical methods to identify phases and grains from TEM images. The application of the geometrical phase algorithm in order to form numerical moire mappings and RGB multilayered image reconstructions allows us to discern among the different phases and grains formed inside these nanostructures. Samples aged for shorter times reveal the presence of metastable InN:O zinc blende (zb) volumes, which act as the intermediate phase between the initial InN-w and the most stable cubic In 2 O 3 end phase. These cubic phases are highly twinned with a proportion of 50:50 between both orientations. We suggest that the existence of the intermediate InN:O-zb phase should be seriously considered to understand the reason for the widely scattered reported fundamental properties of thought to be InN-w, as its bandgap or superconductivity.

  7. Indian gift unveiled at CERN: the statue of the Indian deity Shiva was unveiled by His Excellency K M Chandrasekhar, ambassador (WTO Geneva), shown above signing the visitors' book, Anil Kakodkar, chairman of the Atomic Energy Commission and secretary of the Indian Department of Energy, and CERN's director-general, Robert Aymar.

    CERN Multimedia

    Maximilien Brice

    2004-01-01

    On 18 June CERN unveiled an unusual new landmark - a statue of the Indian deity Shiva. The statue is a gift from CERN's Indian collaborators to celebrate CERN's long association with India, which began in the 1960s. The statue was made in India in the traditional style. The original sculpture was a wax model, around which a soil mould was made. Melting the wax left a hollow into which liquid metal was poured, and once cooled the mould was split and the statue polished and given its antique finish.

  8. Sensibilidad postratamiento de blanquamiento dental con la solución de McInnes en pacientes con fluorosis dental grado TF4

    OpenAIRE

    Paredes Balseca, Jenny Carolina

    2017-01-01

    The dental sensibility is one of the problems caused by multiple factors, one of them is the posttreatment sensibility to the dental clearance, nevertheless it is the most used method at present in the persons who has dental fluorosis with the purpose of improving the color of the tooth and the esthetics, in the present investigation there was studied the behavior of the application of solution of McInnes in this type of teeth by relation to the sensibility Objective: To evaluate the degree o...

  9. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Science.gov (United States)

    Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

    2015-05-01

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  10. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Energy Technology Data Exchange (ETDEWEB)

    Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  11. Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Thomas Fabian

    2008-12-19

    This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

  12. PLAN DE MARKETING PARA EL HOTEL CARRIZAL INN

    Directory of Open Access Journals (Sweden)

    Ángel Guillermo Félix Mendoza

    2015-06-01

    Full Text Available El objetivo principal de esta investigación fue la elaboración de un plan de marketing para el Hotel Carrizal Inn ubicado en la ciudad de Calceta, provincia de Manabí, Ecuador. Se estructuraron tres fases metodológicas, el diagnóstico situacional, estudio de mercado y plan turístico. En la primera fase se delimitó el área de estudio; además se efectuó un análisis interno y externo, utilizando matrices de diagnóstico como la evaluación de factores internos y externos, matriz de competidores y matriz de diagnóstico de fortalezas, oportunidades, debilidades y amenazas. En el estudio de mercado se analizaron los componentes de oferta y demanda del hotel, se determinaron algunas fallas en la denominación utilizada, según los criterios para la categorización hotelera manejada por el Ministerio de Turismo. En función del diagnóstico FODA, se generaron estrategias para el posicionamiento y comercialización del hotel. Mediante las encuestas realizadas a los huéspedes se pudo conocer el perfil del visitante que llega al hotel y se elaboró un plan publicitario, en el cual sobresale el logotipo y slogan, tríptico promocional, la promoción en página web y redes sociales. Se establecieron estrategias del mix para minimizar falencias operativas en el hotel. Se concluye que la principal nomenclatura utilizada no concuerda con los parámetros establecidos por el Ministerio de Turismo, por lo que se plantea reestructurar ciertas áreas específicas como la cantidad de habitaciones o cambiar la denominación a hostal.

  13. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Directory of Open Access Journals (Sweden)

    B. K. Barick

    2015-05-01

    Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  14. Ibani (Niger Delta) Traditional Religion and Social Morality | Jaja ...

    African Journals Online (AJOL)

    The Ibani is of the Ijo extraction in the Niger Delta of Nigeria. The belief in a Supreme Being called Tamuno but also on multitude of deities because of the environment in which they live. They believe that these deities perform social functions that stabilize society. Ibani cosmology revolve round the tripod – God, deities and ...

  15. Evaluation of testing strategies for the radiation tolerant ATLAS n **+-in-n pixel sensor

    CERN Document Server

    Klaiber Lodewigs, Jonas M

    2003-01-01

    The development of particle tracker systems for high fluence environments in new high-energy physics experiments raises new challenges for the development, manufacturing and reliable testing of radiation tolerant components. The ATLAS pixel detector for use at the LHC, CERN, is designed to cover an active sensor area of 1.8 m**2 with 1.1 multiplied by 10 **8 read-out channels usable for a particle fluence up to 10 **1**5 cm**-**2 (1 MeV neutron equivalent) and an ionization dose up to 500 kGy of mainly charged hadron radiation. To cope with such a harsh environment the ATLAS Pixel Collaboration has developed a radiation hard n **+-in-n silicon pixel cell design with a standard cell size of 50 multiplied by 400 mum**2. Using this design on an oxygenated silicon substrate, sensor production has started in 2001. This contribution describes results gained during the development of testing procedures of the ATLAS pixel sensor and evaluates quality assurance procedures regarding their relevance for detector operati...

  16. Molten Salt-Based Growth of Bulk GaN and InN for Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Waldrip, Karen Elizabeth [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Power Sources Technology Dept.; Tsao, Jeffrey Yeenien [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Energy Sciences Dept.; Kerley, Thomas M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Materials Sciences Dept.

    2006-09-01

    An atmospheric pressure approach to growth of bulk group III-nitrides is outlined. Native III-nitride substrates for optoelectronic and high power, high frequency electronics are desirable to enhance performance and reliability of these devices; currently, these materials are available in research quantities only for GaN, and are unavailable in the case of InN. The thermodynamics and kinetics of the reactions associated with traditional crystal growth techniques place these activities on the extreme edges of experimental physics. The technique described herein relies on the production of the nitride precursor (N3-) by chemical and/or electrochemical methods in a molten halide salt. This nitride ion is then reacted with group III metals in such a manner as to form the bulk nitride material. The work performed during the period of funding (July 2004-September 2005) focused on the initial measurement of the solubility of GaN in molten LiCl as a function of temperature, the construction of electrochemical cells, the modification of a commercial glove box (required for handling very hygroscopic LiCl), and on securing intellectual property for the technique.

  17. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

    2005-01-01

    We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Beaulieu-Boycott-Innes syndrome: an intellectual disability syndrome with characteristic facies.

    Science.gov (United States)

    Casey, Jillian; Jenkinson, Allan; Magee, Alex; Ennis, Sean; Monavari, Ahmad; Green, Andrew; Lynch, Sally A; Crushell, Ellen; Hughes, Joanne

    2016-10-01

    We report a female child from an Irish Traveller family presenting with severe intellectual disability, dysmorphic features, renal anomalies, dental caries and cyclical vomiting. Current health issues include global developmental delay, mild concentric left ventricular hypertrophy, dental malocclusion and caries and a single duplex left kidney. The proband and her mother also have multiple epiphyseal dysplasia. Whole-exome sequencing was performed to identify the underlying genetic cause. DNA from the proband was enriched with the Agilent Sure Select v5 Exon array and sequenced on an Illumina HiSeq. Rare homozygous variants were prioritized. Whole-exome sequencing identified three linked homozygous missense variants in THOC6 (c.298T>A, p.Trp100Arg; c.700G>C, p.Val234Leu; c.824G>A, p.Gly275Asp) as the likely cause of this child's intellectual disability syndrome, resulting in a molecular diagnosis of Beaulieu-Boycott-Innes syndrome (BBIS). This is the first report of BBIS in Europe. BBIS has been reported previously in two Hutterite families and one Saudi family. A review of all patients to date shows a relatively homogenous phenotype. Core clinical features include low birth weight with subsequent growth failure, short stature, intellectual disability with language delay, characteristic facies, renal anomalies and dental malocclusion with caries. Some patients also have cardiac defects. All patients show characteristic dysmorphic facial features including a tall forehead with high anterior hairline and deep-set eyes with upslanting palpebral fissures. The coexistence of intellectual disability together with these characteristic facies should provide a diagnostic clue for BBIS during patient evaluation.

  19. Religious Festivals in Cherokee Life.

    Science.gov (United States)

    Perry, Samuel D.

    1979-01-01

    This article examines the Cherokee relationship to Yohewa, their Supreme Deity, Asga-Ya-Galun-Lati (father of the human family), Earth (mother of the human family), and describes the ceremonies honoring their deities. (RTS)

  20. Electronic and thermoelectric properties of InN studied using ab initio density functional theory and Boltzmann transport calculations

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P. D., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu; Scolfaro, L., E-mail: pdborges@gmail.com, E-mail: lscolfaro@txstate.edu [Department of Physics, Texas State University, San Marcos, Texas 78666 (United States)

    2014-12-14

    The thermoelectric properties of indium nitride in the most stable wurtzite phase (w-InN) as a function of electron and hole concentrations and temperature were studied by solving the semiclassical Boltzmann transport equations in conjunction with ab initio electronic structure calculations, within Density Functional Theory. Based on maximally localized Wannier function basis set and the ab initio band energies, results for the Seebeck coefficient are presented and compared with available experimental data for n-type as well as p-type systems. Also, theoretical results for electric conductivity and power factor are presented. Most cases showed good agreement between the calculated properties and experimental data for w-InN unintentionally and p-type doped with magnesium. Our predictions for temperature and concentration dependences of electrical conductivity and power factor revealed a promising use of InN for intermediate and high temperature thermoelectric applications. The rigid band approach and constant scattering time approximation were utilized in the calculations.

  1. Retrospective forecasts of the upcoming winter season snow accumulation in the Inn headwaters (European Alps)

    Science.gov (United States)

    Förster, Kristian; Hanzer, Florian; Stoll, Elena; Scaife, Adam A.; MacLachlan, Craig; Schöber, Johannes; Huttenlau, Matthias; Achleitner, Stefan; Strasser, Ulrich

    2018-02-01

    This article presents analyses of retrospective seasonal forecasts of snow accumulation. Re-forecasts with 4 months' lead time from two coupled atmosphere-ocean general circulation models (NCEP CFSv2 and MetOffice GloSea5) drive the Alpine Water balance and Runoff Estimation model (AWARE) in order to predict mid-winter snow accumulation in the Inn headwaters. As snowpack is hydrological storage that evolves during the winter season, it is strongly dependent on precipitation totals of the previous months. Climate model (CM) predictions of precipitation totals integrated from November to February (NDJF) compare reasonably well with observations. Even though predictions for precipitation may not be significantly more skilful than for temperature, the predictive skill achieved for precipitation is retained in subsequent water balance simulations when snow water equivalent (SWE) in February is considered. Given the AWARE simulations driven by observed meteorological fields as a benchmark for SWE analyses, the correlation achieved using GloSea5-AWARE SWE predictions is r = 0.57. The tendency of SWE anomalies (i.e. the sign of anomalies) is correctly predicted in 11 of 13 years. For CFSv2-AWARE, the corresponding values are r = 0.28 and 7 of 13 years. The results suggest that some seasonal prediction of hydrological model storage tendencies in parts of Europe is possible.

  2. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  3. 116 THE IGALA TRADITIONAL RELIGIOUS BELIEF SYSTEM ...

    African Journals Online (AJOL)

    Ike Odimegwu

    supreme God called Ọjọ, but that it is a function of intercourse between ..... other deities at the same time; implicit monotheism,. i.e. a belief in a supreme deity yet no definite denial of other gods; and lastly, explicit monotheism, a belief in a ...

  4. Providential History in the Chronicles of the Baltic Crusades

    DEFF Research Database (Denmark)

    Nielsen, Torben Kjersgaard

    2017-01-01

    This article examines two medieval chronicles dealing with the crusades in the Baltic. The Chronicon Livoniae by Henry, a German priest — and interpreter — in the region, provides an account of the crusades in Livonia and Estonia from c.1184 to c.1227. Henry was an eyewitness, even if surely biased...... chronicle examined in this article is the Chronicon terre Prussie. This chronicle, authored by a Teutonic Knight named Peter of Dusburg and written c.1326, relates the arrival and history of the Teutonic Order in Prussia from c.1230, also covering the initial submission of the Prussian pagans to Christian......, creating a struggle for autonomy and dominance. The two chronicles made considerable use of Scripture, albeit in different ways. This article investigates the uses of the Bible in both chronicles with a special eye to how ideas of providential history — that is the role assigned by the authors...

  5. Humanizing the Deities of Jazz

    Science.gov (United States)

    Jeppesen, Scott

    2017-01-01

    As musicians, we have been taught to idolize certain figures in music history. These individuals are considered untouchable, unassailable, and unquestionably brilliant. This practice is increasingly evident in jazz. Figures like Duke Ellington, Louis Armstrong, Charlie Parker, and Miles Davis have all undergone a virtual apotheosis. While there is…

  6. An Overview of the Geological and Geotechnical Aspects of the New Railway Line in the Lower Inn Valley

    Science.gov (United States)

    Eder, Stefan; Poscher, Gerhard; Sedlacek, Christoph

    The new railway line in the lower Inn-valley is part of the Brenner railway axis from Munich to Verona (feeder north). The first section between the villages of Kundl and Radfeld, west of Wörgl, and the village of Baumkirchen, east of Innsbruck, will become one of the biggest infrastructure projects ever built in Austria, with a length of approx. 43 km and an underground portion of approx. 80%. The article gives an overview of the various geologic formations - hard rock sections in the valley slopes, different water-saturated gravel and sand formations in the valley floor and geotechnically difficult conditions in sediments of Quaternary terraces. It also describes the methodology of the soil reconnaissance using groundwater models for hydrogeologic estimations, core drillings for evaluating geologic models and describes the experiences gained from the five approx. 7.5 km long reconnaissance tunnels for geotechnical and hydrogeological testing. The results of the soil reconnaissance were used to plan different construction methods, such as excavation in soft rock under a jet grouting roof and compressed-air, as well as mechanised shield with fluid support.

  7. Validation of a simple distributed sediment delivery approach in selected sub-basins of the River Inn catchment area

    Science.gov (United States)

    Reid, Lucas; Kittlaus, Steffen; Scherer, Ulrike

    2015-04-01

    For large areas without highly detailed data the empirical Universal Soil Loss Equation (USLE) is widely used to quantify soil loss. The problem though is usually the quantification of actual sediment influx into the rivers. As the USLE provides long-term mean soil loss rates, it is often combined with spatially lumped models to estimate the sediment delivery ratio (SDR). But it gets difficult with spatially lumped approaches in large catchment areas where the geographical properties have a wide variance. In this study we developed a simple but spatially distributed approach to quantify the sediment delivery ratio by considering the characteristics of the flow paths in the catchments. The sediment delivery ratio was determined using an empirical approach considering the slope, morphology and land use properties along the flow path as an estimation of travel time of the eroded particles. The model was tested against suspended solids measurements in selected sub-basins of the River Inn catchment area in Germany and Austria, ranging from the high alpine south to the Molasse basin in the northern part.

  8. Gods, Germs, and Petri Dishes: Toward a Nonsecular Medical Anthropology.

    Science.gov (United States)

    Roberts, Elizabeth F S

    2016-01-01

    This commentary calls on medical anthropology to become programmatically non-secular. Despite recent anthropological critiques of secularity, within and outside of anthropology, most contemporary medical anthropologists continue to leave deities and religiosity out of their examinations of healing practices, especially in their accounts of biomedicine. Through a critical, relational constructionist lens, which traces how all entities are both constructed and real, a non-secular medical anthropology would insist that when deities are part of medical practice, they are integral to analysis. Importantly then, within the symmetrical nature of this same constructionist lens, biomedical entities like germs and petri dishes need to be accounted for just as much as deities.

  9. Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.

    Energy Technology Data Exchange (ETDEWEB)

    United States. Bonneville Power Administration.

    1985-04-01

    The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

  10. Dgroup: DG01664 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available /INN) D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetical recombination) (JAN...) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetical recombination) (JAN) D0825...6 ... Nateplase (INN) D03695 ... Desmoteplase (USAN/INN) D04665 ... Lanoteplase (USAN/INN); Lanoteplase (genetical re...combination) (JAN) D09814 ... Silteplase (INN); Silteplase (genetical recombination) (JAN) D09823 ... Duteplase (INN); Duteplase (genetica... DG01664 DGroup Tissue plasminogen activator (t-PA) -teplase ... D02837 ... Alteplase (USP/INN); Alteplase (geneti

  11. Dgroup: DG01707 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available gen activator (t-PA) ... D02837 ... Alteplase (USP/INN); Alteplase (genetical recombination) (JAN) ... D02947 ... Ani...streplase (USAN/INN) ... D05721 ... Reteplase (USAN/INN) ... D06070 ... Tenecteplase (USAN/INN) ... D05412 ... Monteplase (INN); Monteplase (genetic...al recombination) (JAN) ... D05410 ... Pamiteplase (INN); Pamiteplase (genetica... ... Lanoteplase (USAN/INN); Lanoteplase (genetical recombination) (JAN) ... D09814 ... Silteplase (INN); Silteplase (genetica...l recombination) (JAN) ... D09823 ... Duteplase (INN); Duteplase (genetical re

  12. Development of ZnO:Al-based transparent contacts deposited at low-temperature by RF-sputtering on InN layers

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Abril, O. de [ISOM and Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

    2012-03-15

    Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low-temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as-deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 {omega}.cm{sup 2} were achieved for the contact with 90 nm thick ZnO:Al layer without any post-deposition treatment (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Dgroup: DG01709 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available omiparin (USAN); Semuloparin (USAN); Heparin (BAN) ... D02112 ... Heparin sodium (JP17/USP/INN); Parnaparin sodium... (INN) ... D04427 ... Heparin calcium (JP17); Nadroparin calcium (INN) ... D03674 ... Enoxaparin sodium (JAN/USAN/...INN) ... D04977 ... Parnaparin sodium (JP17) ... D02980 ... Ardeparin sodium (USAN/INN) ... D03337 ... Reviparin sodiu...m (JAN) ... D03353 ... Dalteparin sodium (JAN/USAN/INN) ... D03673 ... Deligoparin sodium... (USAN/INN) ... D06398 ... Tinzaparin sodium (USAN) ... D09860 ... Adomiparin sodium (USAN); Semuloparin sodium (USAN/INN); Ardeparin sodium

  14. (In) Famous Spirituality : Harriet Beecher Stowe's Uncle Tom

    NARCIS (Netherlands)

    Visser, I.

    2008-01-01

    After the Egyptian and the Indian, the Greek and Roman, the Teuton and Mongolian, the Negro is a sort of seventh son, born with a veil, and gifted with second sight in this American world-a world which yields him no true self-consciousness, but only lets him see himself through the revelation of the

  15. Distribution of air pollutants in the Inn Valley atmosphere during high concentration events in winter 2006

    International Nuclear Information System (INIS)

    Schnitzhofer, R.; Norman, M; Dunkl, J.; Wistaler, A.; Hansel, A.; Neininger, B.; Gohm, A.

    2006-01-01

    Full text: The goal of the INNOX field campaign, which took place during January and February 2006 near the town of Schwaz, was to obtain a three-dimensional picture of the spatial distribution of air pollutants in the Inn Valley during wintertime. For this purpose continuous ground based measurements and, on six chosen days, vertical profiles within the lowest 200 m above ground level (AGL) of the valley atmosphere of certain VOCs (benzene, toluene, etc.) and CO were performed using a proton-transfer-reaction mass spectrometry instrument (PTR-MS). For the soundings a 200-m long teflon line was fixed on a tethered balloon through which the air was sucked to the PTR-MS instrument and to a CO analyser. Next to the inlet on the tethered balloon meteorological data, such as air temperature, pressure, wind, were measured as well. Above the lowest 200 m AGL a research aircraft from MetAir AG (Switzerland), equipped with various instruments for in-situ measurements of air pollutants and meteorological data, was operated. A typical flight pattern consisted of five vertical cross sections between about 150 to 2500 m AGL and lasted about three hours. Altogether 25 hours of aircraft measurements were carried out on six different days. The combination of low-level balloon measurements and upper-level aircraft observations yields vertical profiles of various parameters which cover the whole valley atmosphere. Preliminary results which show strong vertical but also horizontal gradients of air pollutant concentrations will be presented. (author)

  16. Dgroup: DG01493 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available utide, -natide ... D04121 ... Exenatide (JAN/USAN/INN) ... D06404 ... Liraglutide (USAN/INN); Liraglutide (genetical r...ecombination) (JAN) ... D09729 ... Lixisenatide (JAN/INN) ... D08843 ... Albiglutide (USAN); Albiglutide (genetical ...recombination) (JAN) ... D09889 ... Dulaglutide (USAN/INN); Dulaglutide (genetical re...combination) (JAN) ... D09723 ... Taspoglutide (USAN/INN) D10025 ... Semaglutide (USAN/INN); Semaglutide (genetical

  17. Dgroup: DG01491 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available copolamine butylbromide (JP17) ... D01463 ... Diponium bromide (JAN/INN) D01491 ... Butropium bromide (JP17/INN) ... ...ide (JP17/INN) D01875 ... Tiquizium bromide (JAN/INN) ... D01929 ... Tiotropium bromide ...hydrate (JAN) ... D01946 ... Oxitropium bromide (JAN/INN) D01976 ... N-Methylscopolamine methylsulfate (JAN) ... D02212 ... Ipratropium... bromide (USAN); Ipratropium bromide hydrate (JP17) ... D02417 ... Flutropium bromide (JAN) D025...N/USAN/INN) ... D08838 ... Acotiamide hydrochloride (USAN); Acotiamide hydrochloride hydrate (JAN) ... D09402 ... Darotropium bromide (USAN/INN) Neuropsychiatric agent ...

  18. Dgroup: DG01501 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available N) ... D03077 ... Benazeprilat (USAN/INN) D03440 ... Ceronapril (USAN/INN) D03756 ... Indolapril hydrochloride (USAN) ... (USAN) ... D00383 ... Trandolapril (JAN/INN) ... DG00342 ... Spirapril ... D08529 ... Spirapril (INN) ... D03765 ... Spirapril ...USAN); Cilazapril hydrate (JP17) ... DG00341 ... Fosinopril ... D07992 ... Fosinopril (INN) ... D00622 ... Fosinopril sodium

  19. Eesti ajaloolaste ülemaailmne auhind : dr. Artur Puksovi auhind 2003 / Helmut Piirimäe

    Index Scriptorium Estoniae

    Piirimäe, Helmut, 1930-

    2003-01-01

    Laureaadid: Enn Küng (monograafia "Rootsi majanduspoliitika Narva kaubanduse küsimuses 17. sajandi teisel poolel"); Anti Selart (monograafia "Liivimaa ja Vene 13. sajandil. Uurimus poliitilisest ajaloost"); Tiina Kala (raamat "Euroopa kirjakultuur hiliskeskaegsetes õppetekstides. Tallinna dominiiklase David Sliperi taskuraamat"); Juhan Kreem (monograafia "The Town and Its Lord: Reval and the Teutonic Order"); Andres Tvauri (monograafia "Muinas- Tartu Uurimus Tartu muinaslinnuse ja asula asustusajaloost")

  20. Dgroup: DG01718 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01718 DGroup Drugs for addictive disorder ... DG01715 ... Drugs for nicotine dependence ... DG00994 ... Nicotine ... D03365 ... Nicotine (USP) ... D05156 ... Nicotine bitartrate (USAN) ... D05157 ... Nicotine polacrilex (USAN) ... DG00995 ... Varenicline ... D08669 ... Varenicline (INN) ... D06282 ... Varenicline tartrate (JAN/USAN) ... DG01716 ... Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) ... DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) ... D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) DG01717 ... Drugs for opioid dependence ... DG00820 ... Buprenorphine ... D07132 ... Buprenorphine (JAN/INN) ... D00836 ... Buprenorphine hydrochloride (JP17/USP) ... DG00999 ... Methadone ... D08195 ... Methadone (BAN) ... D02102 ... Methadone hydrochloride (JAN/USP) ... DG01000 ... Levacetylmethadol ... D04716 ... Levomethadyl acetate (USAN); Levacetylmethadol (INN) ... D00840 ... Levomethadyl acetate hydrochloride (USAN) ... DG01001 ... Lofexidine ... D08141 ... Lofexidine (INN) ... D04765 ... Lofexidine hydrochloride (USAN) ... DG01002 ... Levomethadone ... D08121 ... Levomethadone (INN) ... D08122 ... Levomethadone hydrochloride ... DG01003 ... Diamorphine ... D07286 ... Diamorphine (BAN) ... D07810 ... Diacetylmorphine hydrochloride ... D10250 ... Buprenorphine - naloxone mixt ... DG01151 ... Nalorphine ... D08247 ... Nalorphine (INN) ... D08248 ... Nalorphine hydrochloride (USP) ... DG01155 ... Naloxone ... D08249 ... Naloxone (INN) ... D01340 ... Naloxone hydrochloride (JP17/USP

  1. Dgroup: DG01457 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available fine granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D0...zide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17...); Naftopidil orally disintegrating tablets (JP17) ... D01965 ... Silodosin (JP17/INN) ... D02995 ... Asenapine male

  2. Dgroup: DG01635 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D00896 ... Efavirenz (JAN/INN) ... D01615 ... Dexamethasone palmitate (JAN) ... D01832 ... Moda...finil (JAN/USAN/INN) ... D03012 ... Avasimibe (USAN/INN) D03215 ... Armodafinil (USAN/INN) ... D03669 ... Deferasir

  3. Dgroup: DG01554 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01554 DGroup 5-Nitrofuran antiprotozoal nifur- ... D00830 ... Furazolidone (USP/INN) D... Nifuroxime (INN) D04714 ... Levofuraltadone (USAN/INN) D05165 ... Nifursemizone (USAN/INN) D05166 ... Nifursol (USAN) Antiparasitic ... Antiprotozoals ...

  4. Dgroup: DG02018 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... C... ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flurocitabine (USAN/INN)

  5. Dgroup: DG01958 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available USP) ... D03546 ... Clofarabine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG...Enocitabine (JAN/INN) ... D01651 ... Ancitabine hydrochloride (JAN) ... D04134 ... Fazarabine (USAN/INN) ... D04233 ... Flu

  6. Low Temperature Growth of In2O3and InN Nanocrystals on Si(111 via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

    Directory of Open Access Journals (Sweden)

    Tsokkou Demetra

    2009-01-01

    Full Text Available Abstract Indium oxide (In2O3 nanocrystals (NCs have been obtained via atmospheric pressure, chemical vapour deposition (APCVD on Si(111 via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl which is incorporated into the In under a gas flow of nitrogen (N2. Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forT G < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111 where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111. The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111 with an average diameter of 300 nm.

  7. Dgroup: DG01439 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ine (JAN/USAN/INN) ... D05134 ... Nelarabine (JAN/USAN/INN); Nelzarabine (USAN) ... DG00686 ... Cytarabine ... D00168 ... ...tabine hydrochloride (JAN) D04134 ... Fazarabine (USAN/INN) D04233 ... Flurocitabine (USAN/INN) D06100 ... Tezacitabi

  8. Dgroup: DG01458 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01458 DGroup Carbapenem -penem DG01458.gif DG00591 ... Meropenem ... D08185 ... Meropenem (INN) ... D02222 ... Meropene...m (USP); Meropenem hydrate (JP17) ... DG00592 ... Ertapenem ... D07908 ... Ertapenem (INN) ... D04049 ... Ertapene...m sodium (USAN) ... DG00593 ... Doripenem ... D03895 ... Doripenem (USAN/INN) ... D01836 ... Doripenem hydr...ate (JAN) ... DG01212 ... Imipenem ... D04515 ... Imipenem (INN) ... D00206 ... Imipenem (USP); Imipene...m hydrate (JP17) D01048 ... Panipenem (JP17/INN) D01057 ... Biapenem (JAN/USAN/INN) ... D01058 ... Lenapenem hyd

  9. Influence of defects on the absorption edge of InN thin films: The band gap value

    Science.gov (United States)

    Thakur, J. S.; Danylyuk, Y. V.; Haddad, D.; Naik, V. M.; Naik, R.; Auner, G. W.

    2007-07-01

    We investigate the optical-absorption spectra of InN thin films whose electron density varies from ˜1017tõ1021cm-3 . The low-density films are grown by molecular-beam-epitaxy deposition while highly degenerate films are grown by plasma-source molecular-beam epitaxy. The optical-absorption edge is found to increase from 0.61to1.90eV as the carrier density of the films is increased from low to high density. Since films are polycrystalline and contain various types of defects, we discuss the band gap values by studying the influence of electron degeneracy, electron-electron, electron-ionized impurities, and electron-LO-phonon interaction self-energies on the spectral absorption coefficients of these films. The quasiparticle self-energies of the valence and conduction bands are calculated using dielectric screening within the random-phase approximation. Using one-particle Green’s function analysis, we self-consistently determine the chemical potential for films by coupling equations for the chemical potential and the single-particle scattering rate calculated within the effective-mass approximation for the electron scatterings from ionized impurities and LO phonons. By subtracting the influence of self-energies and chemical potential from the optical-absorption edge energy, we estimate the intrinsic band gap values for the films. We also determine the variations in the calculated band gap values due to the variations in the electron effective mass and static dielectric constant. For the lowest-density film, the estimated band gap energy is ˜0.59eV , while for the highest-density film, it varies from ˜0.60tõ0.68eV depending on the values of electron effective mass and dielectric constant.

  10. The Emergence of the White Supremacist Movement: A Criminal Justice Issue

    Science.gov (United States)

    1988-07-25

    violent means to achieve their goals. Some activities included arson, harassment , operating a paramilitary organization, and conspiring to bomb a...was formed in 1975 and its use of the nazi culture may be attributed to sexual practices of sado- masochism.3 Policy: Gay fascist National Socialist...Video: Hollywood , CA Orientation: Nazi History: This supply company features films and videos of national socialism and Nazi Germany. Teutonic Unity

  11. Dgroup: DG01716 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01716 DGroup Drugs for alcohol dependence ... DG00996 ... Acamprosate ... D07058 ... Acamprosate (INN) ... D02780 ... Acamprosate calcium (JAN/USAN) ... DG00997 ... Naltrexone ... D05113 ... Naltrexone (USAN/INN) ... D02095 ... Naltrexone hydrochloride (USP) ... DG00998 ... Nalmefene ... D05111 ... Nalmefene (USAN/INN) ... D02104 ... Nalmefene hydrochloride ... D10812 ... Nalmefene hydrochloride hydrate (JAN) DG01756 ... Ondelopran ... D10143 ... Ondelopran (USAN/INN) ... D10144 ... Ondelopran hydrochloride (USAN) D00123 ... Cyanamide (JP17) ... D00131 ... Disulfiram (JP17/USP/INN) ... D03288 ... Calcium carbimide (INN) Other ... DG01718 ... Drugs for addictive disorder ATC code: N07BB Drugs of addictive disorder ...

  12. Myth and Philosophy in ancient Greek

    Directory of Open Access Journals (Sweden)

    Ionuţ ŞTEFAN

    2011-01-01

    Full Text Available nto mythological horizon, universe is thinking in relation to the primordial deities. Doesn't exist a specialized concept, or a term for thinking the universe. What is important is the sacrifice originating mytholigical horizon, the first primordial deities. These gods must "die" at the birth of the universe; and this is the primordial sacrifice. Theme of the original sacrifice will survive until today. Into the philosophical horizon the Universe is thought through the concept. The first concept is the original concept of the anaximandrian infinity which is called apeiron.

  13. Dgroup: DG01620 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01620 DGroup Tamoxifene-type antineoplastic -ifen(e) ... DG00734 ... Tamoxifen ... D08559 ... Tam...oxifen (INN) ... D00966 ... Tamoxifen citrate (JP17/USP) ... DG00735 ... Toremifene ... D08620 ... Toremifene (INN) ... D0...USAN/INN) D09380 ... Sivifene (USAN/INN) Other ... DG01619 ... Clomifene and tamoxifen derivative ... Antiestrogens or e

  14. Dgroup: DG01465 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D08064 ... Ifenprodil (INN) ... D01445 ... Ifenprodil tartrate (JP17); Ifenprodil tartrate fine granules (JP17); Ifenprodil tartrate tablet...NN) ... D00560 ... Pimozide (JP17/USP/INN) ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... D019

  15. Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures

    International Nuclear Information System (INIS)

    Wang, C.Y.; Hauguth, S.; Polyakov, V.; Schwierz, F.; Cimalla, V.; Kups, T.; Himmerlich, M.; Schaefer, J.A.; Krischok, S.; Ambacher, O.; Morales, F.M.; Lozano, J.G.; Gonzalez, D.; Lebedev, V.

    2008-01-01

    The structural, chemical and electron transport properties of In 2 O 3 /InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In 2 O 3 /InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Due inediti rotoli pergamenacei. L'Ordine Teutonico e la sua organizzazione archivistica al principio del XIV secolo

    Directory of Open Access Journals (Sweden)

    Barbara Bombi

    2013-01-01

    Full Text Available After a brief overwiew on the archival history of the Teutonic Order in the thirteenth and early fourteenth century, the article focuses on the problem of conservation practices and record keeping that the Order adopted during the period of displacement and reorganization of its archives. Two parchment rolls are analyzed, both preserved in the Geheimes Staatsarchiv Preussischer Kulturbesitz in Berlin and containing headings of mostly papal documents issued in favor of the Order in the thirteenth century. The first roll was drawn up at the beginning of the fourteenth century on the documents preserved in the Roman church of Santa Maria in Domnica: the roll is one of the last witnesses of the size of the Roman archive of the Order before its dispersion. The second roll was commissioned in 1318 by the procurator generalis of the Order in the Avignon Curia and was compiled to affirm, first of all, the lawsuit of the Teutonic Knights on rights in Livonia against the archbishop of Riga. The authors of this second roll used, in all probability, compilations made by the will of procuratores of the Order at the Papal Curia ​​in the thirteenth century and based on registers of Papal Chancery.

  17. Dgroup: DG01936 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01936 DGroup TNF inhibitor ... D00742 ... Etanercept (USAN/INN); Etanercept (genetica...l recombination) (JAN); Etanercept (genetical recombination) [etanercept biosimilar 1] (JAN) ... D02598 ... Infl...iximab (USAN/INN); Infliximab (genetical recombination) (JAN); Infliximab (genetical recombination) [Inflixi...mab biosimilar1] (JAN); Infliximab (genetical recombination) [Infliximab biosimil...ar2] (JAN) ... D07436 ... Afelimomab (INN) D02597 ... Adalimumab (USAN/INN); Adalimumab (genetical recombination) (

  18. Dining in the lions� den � Bel and the dragon, verses 28�42 (Old Greek/Theodotion

    Directory of Open Access Journals (Sweden)

    Joseph J. de Bruyn

    2015-03-01

    Full Text Available This article is part of a series of articles written on Bel and the dragon. This series of articles is an investigation into the Greek editor/author�s use of body, space, narrative and genre in creating a new reality regarding the Jewish deity. A spatial framework is used to specifically examine the third episode of Bel and the dragon, entitled Dining in the lions� den. It is suggested that the third episode of Bel and the dragon should be read in a reciprocal relationship with not only Bel and the dragon but also the larger book of Daniel. Firstly, such an analysis indicates that the smaller episode is part of a larger clash of deities. Secondly, it shows that the editor/ author utilises the episode to recreate a new cosmology. In this new cosmology, the God of Israel is an almighty deity whilst other deities are revealed as false and not real living gods. In his own way, the editor/author contributes to the way in which Jews regarded their God within the reality of the diaspora.Intradisciplinary and/or interdisciplinary implications: The aim with this article was to analyse Daniel 14 by means of new insights from developments in language studies. Until now, scholars tended to repeat each other in their analysis of Daniel 14. No attention was given to space, body or other aspects of new developments in the field of language. This article challenges the repetitive research previously done on Daniel 14.

  19. Dgroup: DG01645 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available done (INN) ... D08122 ... Levomethadone hydrochloride DG01015 ... Hydroxychloroquine ... D08050 ... Hydroxychloroquine (INN) ... D02114 ... Hydroxychloroq...uine sulfate (JAN/USP) ... DG01021 ... Halofantrine ... D08033 ... Halofantrine (INN) ... D02485

  20. The electronic band structures of InNxAs1-x, InNxSb1-x and InAsxSb1-x alloys

    International Nuclear Information System (INIS)

    Mohammad, Rezek; Katircioglu, Senay

    2009-01-01

    The band gap bowings of InN x As 1-x , InN x Sb 1-x , and InAs x Sb 1-x alloys defined by the optimized lattice constants are investigated using empirical tight binding (ETB) method. The present ETB energy parameters which take the nearest neighbor interactions into account with sp 3 d 2 basis are determined to be sufficient to provide a typical feature for the band gap bowings of the alloys. The band gap bowing parameter is found to be relatively large in both InN x As 1-x and InN x Sb 1-x compared to InAs x Sb 1-x alloys. Moreover, the variation of the fundamental band gaps of InN x Sb 1-x alloys is sharper than that of InN x As 1-x alloys for small concentrations of N. Besides, a small amount of nitrogen is determined to be more effective in InN x Sb 1-x than in InN x As 1-x alloys to decrease the corresponding effective masses of the electrons around Γ points

  1. Public and Private Cults of Hygieia (Particularly Focusing on Crete

    Directory of Open Access Journals (Sweden)

    Giampiera Arrigoni

    2012-07-01

    Full Text Available Aim of this article is a survey of the cults dedicated to Hygieia in public and private spheres. This is the occasion of analyzing the conception of health and Hygieia among the archaic poets, and the process by which Hygieia from personification became a deity. Also analyzed is the link of Hygieia with other deities or personifications, the symbolism of certain attributes and epithets in poetry and cult and the meaning of certain gestures. Particular attention is paid to Crete (especially Gortyna and finally to the presence of Hygieia in baths and thermae.

  2. Dgroup: DG02000 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available AN/INN) DG01828 ... Deleobuvir ... D10554 ... Deleobuvir (USAN/INN) ... D10622 ... Deleobuvir sodium (JAN/USAN) D10477 ... Mericitabine (USAN/INN) Antiviral ... Treatment of hepatitis C NS5B polymerase ...

  3. Dgroup: DG01752 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available (USAN/INN); Interferon alfa-2a (genetical recombination) (JAN) ... D02745 ... Interferon alfa-2b (USAN); Interferon alfa-2b (genetica... Interferon alfa-n3 (USAN) DG01751 ... Interferon beta ... D00746 ... Interferon beta-1b (USAN/INN); Interferon beta-1b (genetica...D00747 ... Interferon gamma-1b (USAN/INN) ... D03357 ... Interferon gamma-1a (genetical recombination) (JAN) ... D...08805 ... Interferon gamma-n1 (JAN) D02744 ... Interferon alfacon-1 (USAN/INN); Interferon alfacon-1 (genetical re...combination) (JAN) D02747 ... Peginterferon alfa-2a (USAN/INN); Peginterferon alfa-2a (genetica

  4. Dgroup: DG01642 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 7/USAN/INN); Fluconazole capsules (JP17) ... D01429 ... Fosfluconazole (JAN/INN) ... DG00375 ... Terbinafine ... D02375 ... Terbinafine... (USAN/INN) ... D02219 ... Terbinafine hydrochloride (JP17/USP) ... DG00441 ... Diclofenac ... D07816 ... Dicl

  5. Dgroup: DG01636 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available analogue, fast-acting ... D04477 ... Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... ... ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genetical recombination) (JAN) ... D04540 ... Insulin glu...lisine (USAN/INN); Insulin glulisine (genetical recombination) (JAN) ... DG01797 ... Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombinat...ion) (JP17); Insulin glargine (genetical recombination) injection (JP17); Insulin glargine (genetical recomb

  6. Dgroup: DG01801 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available Insulin lispro (USP/INN); Insulin lispro (genetical recombination) (JAN) ... D04475 ... Insulin aspart (USAN/INN); Insulin aspart (genet...ical recombination) (JAN) ... D04540 ... Insulin glulisine (USAN/INN); Insulin glulisine (genetica...250 ... Insulin glargine (USAN/INN); Insulin glargine (genetical recombination) (JP17); Insulin glargine (genetica...l recombination) injection (JP17); Insulin glargine (genetical recombination [Insulin glargin biosimilar ...1] (JAN); Insulin glargine (genetical recombination) [Insulin glargin biosimilar

  7. Dgroup: DG01754 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ... Taranabant (USAN/INN) D09349 ... Ibipinabant (USAN/INN) D10314 ... Giminabant (USAN/INN) Other ... DG01706 ... Antiobesity... ... DG01705 ... Anoretic ATC code: A08AX Antiobesity agents CNR1 [HSA:1268] [KO:K04277] ...

  8. Dgroup: DG01466 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available granules (JP17); Ifenprodil tartrate tablets (JP17) ... DG00320 ... Labetalol ... D08106 ... Labetalol (INN) ... D... ... D00561 ... Sertindole (USAN/INN) ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablets (JP17); Naftopidil orally disintegrating tablet

  9. Dgroup: DG01592 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available e (INN) ... D00633 ... Dopamine hydrochloride (JP17/USP) ... DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bupivacaine... hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... D00059 ... Levodopa (JP17/USP/INN) ... Cardiovascular agent ...

  10. Dgroup: DG00177 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00177 Chemical ... DGroup Erythropoietin ... D03231 ... Epoetin alfa (USAN/INN); Epoetin... alfa (genetical recombination) (JP17) ... D03232 ... Epoetin beta (USAN/INN); Epoetin beta (genetical recombina...tion) (JP17) ... D04032 ... Epoetin delta (USAN) D09737 ... Epoetin kappa (INN); Epoetin kappa (genetical recombination) (Epoet...in alfa biosimilar 1) (JAN) ... D09998 ... Epoetin beta pegol (genetical ...recombination) (JAN) ... D10000 ... Epoetin epsilon (INN); Epoetin epsilon (genetical recombination) (JAN) D10846 ... Epoet

  11. Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength

    Science.gov (United States)

    Polash, Md. Mobarak Hossain; Alam, M. Shah; Biswas, Saumya

    2018-03-01

    A single quantum well semiconductor laser based on wurtzite-nitride is designed and analyzed for short distance communication wavelength (at around 1300 nm). The laser structure has 12 Å well layer of InN, 15 Å barrier layer of In0.25Ga0.75N, and 54 Å separate confinement heterostructure layer of GaN. To calculate the electronic characteristics of the structure, a self-consistent method is used where Hamiltonian with effective mass approximation is solved for conduction band while six-bands Hamiltonian matrix with k · p formalism including the polarization effect, valence-band mixing effect, and strain effect is solved for valence band. The interband optical transition elements, optical gain, differential gain, radiative current density, spontaneous emission rate, and threshold characteristics have been calculated. The wave function overlap integral is found to be 45.93% for TE-polarized structure. Also, the spontaneous emission rate is found to be 6.57 × 1027 s - 1 cm - 3 eV - 1 at 1288.21 nm with the carrier density of 5 × 1019 cm - 3. Furthermore, the radiative current density and the radiative recombination rate are found to be 121.92 A cm - 2 and 6.35 × 1027 s - 1 cm - 3, respectively, while the TE-polarized optical gain of the structure is 3872.1 cm - 1 at 1301.7 nm.

  12. Dgroup: DG01986 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01986 DGroup Estrogen ... DG00461 ... Ethinylestradiol ... D00554 ... Ethinyl estradiol (US...P); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estr...adiol benzoate (JP17) ... D04061 ... Estradiol acetate (USAN) ... D04063 ... Estr...adiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradiol undecylate (USAN/INN) ... D07918 ... Estr

  13. A new perspective on soil erosion: exploring a thermodynamic approach in a small area of the River Inn catchment

    Science.gov (United States)

    Reid, Lucas; Scherer, Ulrike; Zehe, Erwin

    2016-04-01

    Soil erosion modeling has always struggled with compensating for the difference in time and spatial scale between model, data and the actual processes involved. This is especially the case with non-event based long-term models based on the Universal Soil Loss Equation (USLE), yet USLE based soil erosion models are among the most common and widely used for they have rather low data requirements and can be applied to large areas. But the majority of mass from soil erosion is eroded within short periods of times during heavy rain events, often within minutes or hours. Advancements of the USLE (eg. the Modified Universal Soil Loss Equation, MUSLE) allow for a daily time step, but still apply the same empirical methods derived from the USLE. And to improve the actual quantification of sediment input into rivers soil erosion models are often combined with a Sediment Delivery Ratio (SDR) to get results within the range of measurements. This is still a viable approach for many applications, yet it leaves much to be desired in terms of understanding and reproducing the processes behind soil erosion and sediment input into rivers. That's why, instead of refining and retuning the existing methods, we explore a more comprehensive, physically consistent description on soil erosion. The idea is to describe soil erosion as a dissipative process (Kleidon et al., 2013) and test it in a small sub-basin of the River Inn catchment area in the pre-Alpine foothills. We then compare the results to sediment load measurements from the sub-basin and discuss the advantages and issues with the application of such an approach.

  14. Osoba niepełnosprawna - inne rodzicielstwo, inne braterstwo?

    OpenAIRE

    Stelter, Żaneta

    2012-01-01

    Urodzenie dziecka niepełnosprawnego, to wydarzenie, które ma wpływ na jakość życia rodziny. W artykule przedstawiono w jaki sposób niepełnosprawność dziecka określa sytuację życiową pozostałych członków rodziny. Opisano specyfikę realizacji ról rodzicielskich w rodzinie z dzieckiem niepełnosprawnym oraz przeanalizowano sytuacje psychospołeczną zdrowego rodzeństwa.

  15. Study of High Quality Indium Nitride Films Grown on Si(100 Substrate by RF-MOMBE with GZO and AlN Buffer Layers

    Directory of Open Access Journals (Sweden)

    Wei-Chun Chen

    2012-01-01

    Full Text Available Wurtzite structure InN films were prepared on Si(100 substrates using radio-frequency metal-organic molecular beam epitaxy (RF-MOMBE system. Ga-doped ZnO (GZO and Amorphous AlN (a-AlN film were used as buffer layers for InN films growth. Structural, surface morphology and optical properties of InN films were investigated by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, and photoluminescence (PL. XRD results indicated that all InN films exhibited preferred growth orientation along the c-axis with different intermediate buffers. TEM images exhibit the InN/GZO growth by two-dimensional mode and thickness about 900 nm. Also, the InN films can be obtained by growth rate about ~1.8 μm/h. Optical properties indicated that the band gap of InN/GZO is about 0.79 eV. These results indicate that the control of buffer layer is essential for engineering the growth of InN on silicon wafer.

  16. InN-based layers grown by modified HVPE

    International Nuclear Information System (INIS)

    Syrkin, A.; Usikov, A.; Soukhoveev, V.; Kovalenkov, O.; Ivantsov, V.; Dmitriev, V.; Collins, C.; Readinger, E.; Shmidt, N.; Davydov, V.; Nikishin, S.; Kuryatkov, V.; Song, D.; Rosenbladt, D.; Holtz, Mark

    2006-01-01

    This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric pressure in a hot wall reactor in the temperature range from 500 to 750 and ordm;C. Continuous InN layers are grown on GaN/sapphire template substrates. Textured InN layers are deposited on AlN/sapphire and AlGaN/sapphire templates. Arrays of nano-crystalline InN rods with various shapes are grown directly on sapphire substrates. X-ray diffraction rocking curves for the (002)InN reflection have the full width at half maximum (FWHM) as narrow as 270 arcsec for the nano-rods and 460 arcsec for the continuous layers. In x Ga 1-x N layers with InN content up to 10 mol.% are grown on GaN/sapphire templates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. الحياة السياسية في الأندلس (95-138هـ/714-755م Political life in Andalusia

    Directory of Open Access Journals (Sweden)

    Dr. FirasSalimHayawi أ.د.فراس سليم حياوي

    2016-10-01

    Full Text Available The Arab history Andalusian is part of the Arab-Muslim history, cherish the Arab nation and the title by other nations, because of its especially in the hearts of her sons niche, because they were a link between East and West, and cultural bridge however, and a dam stopped the advance of AlbrberhTeutons and Normans in the direction of Morocco the main islands in the Mediterranean, has witnessed the history of Muslims in Andalusia years of victory, and years of refraction.

  18. An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

    Directory of Open Access Journals (Sweden)

    Saima Zaman

    2013-10-01

    Full Text Available Low-dimensional InN/InGaN quantum dots (QDs are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications.

  19. An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis

    Science.gov (United States)

    Alvi, Naveed ul Hassan; Gómez, Victor J.; Rodriguez, Paul E.D. Soto; Kumar, Praveen; Zaman, Saima; Willander, Magnus; Nötzel, Richard

    2013-01-01

    Low-dimensional InN/InGaN quantum dots (QDs) are demonstrated for realizing highly sensitive and efficient potentiometric biosensors owing to their unique electronic properties. The InN QDs are biochemically functionalized. The fabricated biosensor exhibits high sensitivity of 97 mV/decade with fast output response within two seconds for the detection of cholesterol in the logarithmic concentration range of 1 × 10−6 M to 1 × 10−3 M. The selectivity and reusability of the biosensor are excellent and it shows negligible response to common interferents such as uric acid and ascorbic acid. We also compare the biosensing properties of the InN QDs with those of an InN thin film having the same surface properties, i.e., high density of surface donor states, but different morphology and electronic properties. The sensitivity of the InN QDs-based biosensor is twice that of the InN thin film-based biosensor, the EMF is three times larger, and the response time is five times shorter. A bare InGaN layer does not produce a stable response. Hence, the superior biosensing properties of the InN QDs are governed by their unique surface properties together with the zero-dimensional electronic properties. Altogether, the InN QDs-based biosensor reveals great potential for clinical diagnosis applications. PMID:24132228

  20. Dgroup: DG01781 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available grastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (genetical recombination) [Filgr...astim biosimilar 1] (JAN); Filgrastim (genetical recombination) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetica...USAN/INN); Lenograstim (genetical recombination) (JP17) ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetica...l recombination) (JAN) ... D10242 ... Lipegfilgrastim (USAN) D03245 ... Nartograstim (genetical recombination) (...l recombination) [Filgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (

  1. Dgroup: DG01797 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ical recombination) (JP17); Insulin glargine (genetical recombination) injection (J...P17); Insulin glargine (genetical recombination [Insulin glargin biosimilar 1] (JAN); Insulin glargine (genetica...mir (USAN/INN); Insulin detemir (genetical recombination) (JAN) ... D09727 ... Insulin degludec (USAN/INN); Insulin degludec (genetica... DG01797 DGroup Insulin analogue, long-acting ... D03250 ... Insulin glargine (USAN/INN); Insulin glargine (genet

  2. Dgroup: DG01753 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ocyte colony stimulating factor (G-CSF) ... D03235 ... Filgrastim (USAN/INN); Filgrastim (genetical recombination) (JP17); Filgrastim (gene...tical recombination) [Filgrastim biosimilar 1] (JAN); Filgrastim (genetical recombi...nation) [Filgrastim biosimilar 2] (JAN); Filgrastim (genetical recombination) [Fi...lgrastim biosimilar3] (JAN) ... D03247 ... Lenograstim (USAN/INN); Lenograstim (genetical recombination) (JP17)... ... D06889 ... Pegfilgrastim (INN); Pegfilgrastim (genetical recombination) (JAN) ... D10242 ... Lipegfilgrastim

  3. MALBORK REVITALIZATION PROCESS

    Directory of Open Access Journals (Sweden)

    ŁUKASZ DOPIERAŁA

    2012-04-01

    Full Text Available Malbork is a medium-sized town that arose in the middle ages, near the Teutonic Castle upon Nogat River, one of UNESCO World Heritage Site. The town layout is an expression of its turbulent history, reflected in the mix of new residential and service structures with old industrial buildings and monuments, an urban chaos that caused negative aesthetic feelings among residents and tourists. The following paper presents the key investments made in the town, since 2007, when Malbork adopted a Local Revitalization Program, and their impact upon its residents and tourists.

  4. [Poet-physicians in German literature].

    Science.gov (United States)

    Perels, C

    1991-12-17

    Starting with standards arising from the relationship between medicine and art in classical antiquity, biblical tradition and teutonic-pagan antiquity, this article roams through german literature from the Middle Ages up to the 20th century, from Hildegard of Bingen to Gottfried Benn and Alfred Döblin, guided by the question, how strongly medical knowledge and medical practise are reflected in the poetry of writing physicians. Individual dispositions and epoque-specific features are discussed. Special attention is given to Paul Fleming and Angelus Silesius, Albrecht von Haller and Friedrich Schiller, romanticism and Georg Büchner.

  5. La Prima guerra mondiale e l'uso pubblico della storia in Lituania: i nuovi Cavalieri teutonici

    Directory of Open Access Journals (Sweden)

    Andrea Griffante

    2014-10-01

    Full Text Available At the outburst of the First World War, the mobilization of masses represented, even if for different reasons, an unavoidable goal for both the Imperial powers and national intellectual groups operating in the Tsarist Empire. Symbols and elements of national mythology were often used as cultural mobilization instruments. Lithuanian intellectuals based their mobilization work mainly on the memory of the Battle of Grünwald (1410. When the German occupation began, the Lithuanians used the category of “Teutonic bestiality” to make sense of their experience.

  6. Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

    Energy Technology Data Exchange (ETDEWEB)

    Abdulmalik, Osheiza [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena [Virginia Commonwealth University, Richmond, VA 23298 (United States); Chen, Qiukan; Yang, Jisheng [The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States); Nnamani, Ijeoma [Duke University Medical Center, Durham, NC 27710 (United States); Danso-Danquah, Richmond [Virginia Commonwealth University, Richmond, VA 23298 (United States); Eseonu, Dorothy N. [Virginia Union University, Richmond, VA 23220 (United States); Asakura, Toshio [Duke University Medical Center, Durham, NC 27710 (United States); Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K., E-mail: msafo@vcu.edu [Virginia Commonwealth University, Richmond, VA 23298 (United States); The Children’s Hospital of Philadelphia, Philadelphia, PA 19104 (United States)

    2011-11-01

    Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization.

  7. Crystallographic analysis of human hemoglobin elucidates the structural basis of the potent and dual antisickling activity of pyridyl derivatives of vanillin

    International Nuclear Information System (INIS)

    Abdulmalik, Osheiza; Ghatge, Mohini S.; Musayev, Faik N.; Parikh, Apurvasena; Chen, Qiukan; Yang, Jisheng; Nnamani, Ijeoma; Danso-Danquah, Richmond; Eseonu, Dorothy N.; Asakura, Toshio; Abraham, Donald J.; Venitz, Jurgen; Safo, Martin K.

    2011-01-01

    Pyridyl derivatives of vanillin increase the fraction of the more soluble oxygenated sickle hemoglobin and/or directly increase the solubility of deoxygenated sickle hemoglobin. Crystallographic analysis reveals the structural basis of the potent and dual antisickling activity of these derivatives. Vanillin has previously been studied clinically as an antisickling agent to treat sickle-cell disease. In vitro investigations with pyridyl derivatives of vanillin, including INN-312 and INN-298, showed as much as a 90-fold increase in antisickling activity compared with vanillin. The compounds preferentially bind to and modify sickle hemoglobin (Hb S) to increase the affinity of Hb for oxygen. INN-312 also led to a considerable increase in the solubility of deoxygenated Hb S under completely deoxygenated conditions. Crystallographic studies of normal human Hb with INN-312 and INN-298 showed that the compounds form Schiff-base adducts with the N-terminus of the α-subunits to constrain the liganded (or relaxed-state) Hb conformation relative to the unliganded (or tense-state) Hb conformation. Interestingly, while INN-298 binds and directs its meta-positioned pyridine-methoxy moiety (relative to the aldehyde moiety) further down the central water cavity of the protein, that of INN-312, which is ortho to the aldehyde, extends towards the surface of the protein. These studies suggest that these compounds may act to prevent sickling of SS cells by increasing the fraction of the soluble high-affinity Hb S and/or by stereospecific inhibition of deoxygenated Hb S polymerization

  8. Attitudes of physicians and pharmacists towards International Non-proprietary Name prescribing in Belgium.

    Science.gov (United States)

    Van Bever, Elien; Elseviers, Monique; Plovie, Marijke; Vandeputte, Lieselot; Van Bortel, Luc; Vander Stichele, Robert

    2015-03-01

    International Non-proprietary Name (INN) prescribing is the use of the name of the active ingredient(s) instead of the brand name for prescribing. In Belgium, INN prescribing began in 2005 and a major policy change occurred in 2012. The aim was to explore the opinions of Dutch-speaking general practitioners (GPs) and pharmacists. An electronic questionnaire with 39 five-point Likert scale statements and one open question was administered in 2013. Multivariate analysis was performed with multiple linear regression on a sum score for benefit statements and for drawback statements. Answers to the open question were qualitatively analysed. We received 745 valid responses with a representable sample for both subgroups. Participants perceived the motives to introduce INN prescribing as purely economic (to reduce pharmaceutical expenditures for the government and the patient). Participants accepted the concept of INN prescribing, but 88% stressed the importance of guaranteed treatment continuity, especially in older, chronic patients, to prevent patient confusion, medication non-adherence and erroneous drug use. In conclusion, the current way in which INN prescribing is applied in Belgium leads to many concerns among primary health professionals about patient confusion and medication adherence. Slightly adapting the current concept of INN prescribing to these concerns can turn INN prescribing into one of the major policies in Belgium to reduce pharmaceutical expenditures and to stimulate rational drug prescribing. © 2014 Nordic Association for the Publication of BCPT (former Nordic Pharmacological Society).

  9. MEG source localization using invariance of noise space.

    Directory of Open Access Journals (Sweden)

    Junpeng Zhang

    Full Text Available We propose INvariance of Noise (INN space as a novel method for source localization of magnetoencephalography (MEG data. The method is based on the fact that modulations of source strengths across time change the energy in signal subspace but leave the noise subspace invariant. We compare INN with classical MUSIC, RAP-MUSIC, and beamformer approaches using simulated data while varying signal-to-noise ratios as well as distance and temporal correlation between two sources. We also demonstrate the utility of INN with actual auditory evoked MEG responses in eight subjects. In all cases, INN performed well, especially when the sources were closely spaced, highly correlated, or one source was considerably stronger than the other.

  10. PAULINE INSPIRATIONS FOR THE STUDY OF IGBO DEITIES Jude ...

    African Journals Online (AJOL)

    Dr Ike

    2009-09-10

    Sep 10, 2009 ... the studies of African Traditional Religion, and the theologico- pastoral ... the Igbo and Christian worldviews and takes St. Paul's experiences and letters as guide. .... sought in the segmented Igbo societies and their particular.

  11. Dgroup: DG01358 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01358 Chemical ... DGroup Trastuzumab ... D03257 ... Trastuzumab (INN); Trastuzumab (genetica...l recombination) (JAN) ... D09980 ... Trastuzumab emtansine (USAN/INN); Trastuzumab emtansine (genetical re

  12. Dgroup: DG01456 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomidine... (INN) ... D03702 ... Detomidine hydrochloride (USAN) ... DG0132

  13. Dgroup: DG01613 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01613 DGroup Xantine-type antiparkinsonian agent -fylline ... D02964 ... Apaxifylline ...(USAN/INN) D04641 ... Istradefylline (JAN/USAN/INN) ... Neuropsychiatric agent ... DG01967 ... Antiparkinson agent ...

  14. Dgroup: DG01789 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ) DG01442 ... Tedizolid ... D09685 ... Tedizolid (USAN/INN) ... D09686 ... Tedizolid phosphate (JAN/USAN) ... D10167 ... Sutezolid (USAN/INN) Antibacterial ... Antibiotics 50S ribosomal subunit ...

  15. Dgroup: DG01644 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available xetine ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine...0967 ... Dexamfetamine ... D03740 ... Dextroamphetamine (USAN); Dexamfetamine (INN) ... D02078 ... Dextroamphetamine sulfate (USP) ... DG00970 ... Atomo

  16. Dgroup: DG01584 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01584 DGroup Estrogen receptor agonist -estr- ... DG00461 ... Ethinylestradiol ... D00554... ... Ethinyl estradiol (USP); Ethinylestradiol (JP17/INN) ... D07928 ... Ethinylestradiol propanesulfonate DG00462 ... Estradiol ... D00105 ... Estr...adiol (JAN/USP/INN) ... D01413 ... Estradiol valerate (JAN/USP/INN) ... D01617 ... Estrad...iol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) ... D04061 ... Estradiol a...cetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) ... D04065 ... Estradio

  17. Changes to International Nonproprietary Names for antibody therapeutics 2017 and beyond: of mice, men and more.

    Science.gov (United States)

    Parren, Paul W H I; Carter, Paul J; Plückthun, Andreas

    Active pharmaceutical substances require an International Nonproprietary Name (INN) assigned by the World Health Organization (WHO) to obtain market authorization as a medicinal product. INNs are selected to represent a unique, generic name for a drug enabling unambiguous identification by stakeholders worldwide. INNs may be requested after initiating clinical development of an investigational drug. Pharmaceutical classes are indicated by a common stem or suffix. Currently, INNs for monoclonal antibody-based drugs are recognized by the suffix, -mab, preceded by a source infix such as -xi- (chimeric), -zu- (humanized) or -u- (human) designating the species from which the antibody was derived. However, many technological advances have made it increasingly difficult to accurately capture an antibody's source in its name. In 2014, the WHO and the United States Adopted Names (USAN) Council approached this challenge by implementing changes to antibody source infix definitions. Unfortunately, gaps and ambiguities in the definitions and procedures resulted in inconsistent source category assignments and widespread confusion. The Antibody Society, extensively supported by academic and industry scientists, voiced concerns leading to constructive dialog during scheduled consultations with WHO and USAN Council representatives. In June 2017, the WHO announced that use of the source infix will be discontinued for new antibody INNs effective immediately. We fully support this change as it better aligns antibody INNs with current and foreseeable future innovations in antibody therapeutics. Here we review the changes implemented. Additionally, we analyzed antibody INNs recently assigned under the previous 2014 definitions and provide recommendations for further alignment.

  18. Dgroup: DG01704 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D05454 ... Phenmetrazine hydrochloride (USP) D07114 ... Etilamfetamine (INN) D07115 ... Clobenzorex (INN) Other ... DG01706 ... Antiobesity ... DG01705 ... Anoretic ATC code: A08AA Anoretics ...

  19. Dgroup: DG01970 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ylphenidate (USAN/INN) ... D01296 ... Methylphenidate hydrochloride (JAN/USP) ... DG00970 ... Atomoxetine... ... D07473 ... Atomoxetine (USP/INN) ... D02574 ... Atomoxetine hydrochloride (JAN/USP) ... DG00972 ... De

  20. Dgroup: DG01967 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available de (INN) ... D00502 ... Pergolide mesylate (USP); Pergolide mesilate (JAN) ... D07836 ... Dihydroergocryptine mesilate DG00862 ... Ropini...role ... D08489 ... Ropinirole (USAN/INN) ... D00784 ... Ropinirole hydrochlo

  1. Development of Advanced Ill-Nitride Materials

    Science.gov (United States)

    2008-09-24

    tant to note that growth conditions have little effect on In- vacancy concentration as determined by positron annihilation spectroscopy .27 The In... applications in de- vices. These limitations are in part caused by an electron accumulation layer at the InN surface due to surface Fermi level pinning in the...conduction band,1 restricting the fabrica- tion of p-type InN layers.2 To facilitate pure p-type InN and drive research toward device applications

  2. Dgroup: DG01639 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available amine ... D07984 ... Fluvoxamine (INN) ... D00824 ... Fluvoxamine maleate (JP17/USAN) ... DG00947 ... Escitalopram ... D07913 ... Escitalopram... (INN) ... D02567 ... Escitalopram oxalate (JAN/USAN) ... DG00951 ... Mianserin

  3. Dgroup: DG01975 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 91 ... Enprostil (JAN/USAN/INN) D01451 ... Scopolamine butylbromide (JP17) ... DG02008 ... Gastric mucosal protectant ... DG00025 ... Sucralfate... ... C07314 ... Sucralfate ... D00446 ... Sucralfate (USP/INN); Sucralfate

  4. Dgroup: DG01703 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available AN) DG01610 ... Xanthine-type cardiotonics ... D07151 ... Cafedrine (BAN) ... D07155 ... Theodrenaline (INN) ... D07933 ... Etofy... ... Ciclafrine hydrochloride (USAN) ... D07150 ... Gepefrine (INN) ... D07151 ... Cafedrine (BA

  5. Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

    2007-01-01

    The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

  6. Dgroup: DG01675 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available aine ... D01152 ... Oxethazaine (JP17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride ... DG00801 ... Bupivacaine ... D07552 ... Bupiva...caine (USAN/INN) ... D01450 ... Bupivacaine hydrochloride (USP); Bupivacaine hydrochl

  7. HOTEL INFORMATION

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    Holiday Inn Central Plaza Beijing Tyrone Tang is the newly appointed general manager of Holiday Inn Central Plaza, Beijing.Tang joined IHGin2002.He was transferred from the position of operations manager.

  8. Dgroup: DG01720 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available P17); Cyclophosphamide tablets (JP17) ... DG01514 ... Palifosfamide ... D09364 ... Palifosfamide (USAN/INN) ... D10373 ... P...yclophosphamide ... D07760 ... Cyclophosphamide (INN) ... D00287 ... Cyclophosphamide (USP); Cyclophosphamide hydrate (J

  9. Dgroup: DG01673 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available P17/USAN); Oxetacaine (INN) ... D08311 ... Oxetacaine hydrochloride DG00801 ... Bupivacaine ... D07552 ... Bupivacaine (USAN/INN) ... D01450 ... Bup...ivacaine hydrochloride (USP); Bupivacaine hydrochloride hydrate (JP17) ... DG00802 ...

  10. Dgroup: DG01655 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 130 ... Apraclonidine ... D07461 ... Apraclonidine (INN) ... D01008 ... Apraclonidine hydrochloride (JAN/USP) ... DG01318 ... Detomidine ... D07795 ... Detomi...dine (INN) ... D03702 ... Detomidine hydrochloride (USAN) DG01320 ... Medetomidine ... D08165 ...

  11. Dgroup: DG00462 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00462 Chemical ... DGroup Estradiol ... D00105 ... Estradiol (JAN/USP/INN) ... D01413 ... Estr...adiol valerate (JAN/USP/INN) ... D01617 ... Estradiol dipropionate (JAN) ... D01953 ... Estradiol benzoate (JP17) D04061 ... Estr...adiol acetate (USAN) ... D04063 ... Estradiol cypionate (USP) ... D04064 ... Estradiol enanthate (USAN) D04065 ... Estr...adiol undecylate (USAN/INN) D07918 ... Estradiol hemihydrate D07919 ... Estr...adiol 17 beta-hemisuccinate Other ... DG01584 ... Estrogen receptor agonist ... DG01986 ... Estrogen Cyp substrate ... DG0

  12. Dgroup: DG01600 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01600 DGroup Bisphosphonate -dronic acid, -dronate ... DG00780 ... Etidronic acid ... D02373 ... Etidron...ic acid (USAN/INN) ... D00314 ... Etidronate disodium (JP17/USP) ... DG00781 ... Clodronic acid ... D03545 ... Clodron...ic acid (USAN/INN) ... D03544 ... Clodronate disodium (USAN); Sodium clodronate hydrate (JAN) ... D07720 ... Clodron...ic acid disodium salt DG00782 ... Pamidronic acid ... D07281 ... Pamidronic acid (INN) ... D00941 ... Pamidron...ate disodium (USAN); Pamidronate disodium hydrate (JAN) ... DG00783 ... Alendronic acid ... D07119 ... Alendron

  13. Dgroup: DG01495 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available n (USAN/INN) ... D00626 ... Candesartan cilexetil (JP17/USAN) ... D00627 ... Telmisartan (JP17/USAN/INN); Telmisartan tablet...N); Olmesartan medoxomil tablets (JP17) ... DG00351 ... Azilsartan ... D08864 ... Azilsarta

  14. La función guerrera en la mitología de la Gallaecia antigua. Contribución a la sociología de la cultura castreña

    Directory of Open Access Journals (Sweden)

    José Carlos BERMEJO BARRERA

    2009-12-01

    Full Text Available RESUMEN: En este trabajo, partiendo de la descripción dada por Estrabón (III, 3, 7 [155] acerca del culto tributado por los pueblos del Norte de la Península aun dios similar al Ares griego, se deduce la existencia de una deidad céltica de la Segunda Función similar al Mars romano, al Ares griego y a los dioses de la guerra célticos, que aparece representado en los términos derivados de la raíz coso- en la epigrafía latina de la región. Esta divinidad, como las restantes divinidades de la guerra, aparece asociada a un grupo social muy concreto: la aristocracia militar, formada por guerreros profesionales.ABSTRACT: In this work, starting from the description given by Strabo (III, 3, 7 [155] about the homage paid by the North Iberian Peninsula people to a God of War similar to the Greek Ares, a conclusion is reach regarding the existence of a Celtic deity of the Second Function similar to the Roman Mars, the Greek Ares and the Celtic War Gods, that appears symbolized in the terms derived from the root coso- in the Latin inscriptions of the region. This deity —like the remaining martial deities that are similar— appears linked to a very concrete social group: the military aristocracy, formed by professional warriors.

  15. The triad Zeus, Herakles and Dionysos a contribution to the study of ancient cults in upper Moesia

    Directory of Open Access Journals (Sweden)

    Pilipović Sanja

    2008-01-01

    Full Text Available The triad Zeus, Herakles and Dionysos has been attested in Upper Moesia by the relief from the village of Bukovo near Negotin, eastern Serbia. The Roman supreme god was frequently shown in association with other deities but the presence of Bacchus and Hercules in such associations is Greek rather than Roman in origin. The association of Liber and Hercules was promoted by the emperor Septimius Severus, a native of the city of Leptis Magna whose patron gods were concurrently Liber and Hercules. Septimius even granted the dii patrii a sort of official recognition as patrons of the dynasty he founded. The village of Bukovo where the relief was found had not been known as an archaeological site. There is no specific evidence for the worship of Jupiter in that area, while the worship of Herakles is attested on the sites of Rovine and Tamnič near Negotin. The relief is close to north-Macedonian reliefs in style, and reflects Hellenistic and Thracian influence in associating the cults of Dionysos and Herakles. The depicted deities are compatible and close to Septimius Severus’ official religion. The central position of the supreme god indicates his importance as well as the fact that the other two deities are associated to him, as his children patrons of nature and fertility in the underground and aboveground worlds. It is also important to note that the relief confirms Hellenistic religious influences in the area of the Upper Moesian limes.

  16. Racismo no sul do Brasil: Heranças de um mito

    Directory of Open Access Journals (Sweden)

    Marionilde Dias Brepohl de Magalhães

    1994-12-01

    Full Text Available This study is a discussion of some viewpoints toward Pan-Germanism in southern Brazil and its relation with racism. Ethnos and idiom, uses and customs are elements of identification and necessary to studies about historical diversity. Beginning with a reconstitution of the Pan-Germanic League's activities in Latin America, more specifically in Brazil, the author analyzes the strengthening of a patriotic and nacionalistic conscience of German immigrants. Using documents dated after World War I, new attitudes of the Teutonic descendents are revealed and discussed. The mythical construction of tne German heroic past is one of the issues.

  17. Yoruba Ethnoastronomy - "Orisha/Vodun" or How People's Conceptions of the Sky Constructed Science

    Science.gov (United States)

    Sègla, Dafon Aimé

    For the Yoruba, the Sky is the domain of the Supreme God. They believe that "Olorun" or "Olodumaré" owns the Sky and communicates through secondary, intermediary deities sent to Earth by the Supreme God. These deities are "Orisha" but are also named by the Fon in the Republic of Benin as Vodun. Nowadays, Orisha, more widely known as Vodun, is regarded as satanic, magical, and demonic. Using basic archaeology of cosmological concepts, this false picture can be rejected and replaced by a logical and realistic one based on scientific evidence whereby Orisha/Vodun is conceived as a variant of several existing world views, a "science of the local". Given that Western skepticism concerning African cultures' knowledge arises mainly from misleading comparisons, there is a need for a reconciliation between non-Western and Western world views.

  18. Dgroup: DG01683 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available /INN) D05739 ... Rivoglitazone (USAN/INN) Antidiabetic agent ... DG01685 ... Insulin sensitizer ... DG01795 ... PPAR gamma... agonist Other ... DG01733 ... PPAR agonist Unclassified ... DG02044 ... Hypoglycemics ATC code: A10BG Antidiabetic

  19. Dgroup: DG01794 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available rtugliflozin (USAN/INN) D10669 ... Sotagliflozin (USAN/INN) Antidiabetic agent Uncla...ssified ... DG02044 ... Hypoglycemics ATC code: A10BK Antidiabetics SLC5A2 (SGLT2) [HSA:6524] [KO:K14382] ...

  20. Dgroup: DG01567 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available am (JP17/USP/INN) ... D00280 ... Clonazepam (JP17/USP/INN); Clonazepam fine granules (JP17); Clonazepam tablets ...N); Etizolam fine granules (JP17); Etizolam tablets (JP17) ... D01593 ... Nimetazepam

  1. 78 FR 29374 - National Institute of Environmental Health Sciences Amended; Notice of Meeting

    Science.gov (United States)

    2013-05-20

    ....m. to June 6, 2013, 05:00 p.m., Hilton Garden Inn Durham Southpoint Hotel, 7007 Fayetteville Road... meeting location from the Hilton Garden Inn Durham Southpoint Hotel to the DoubleTree by Hilton Hotel. The...

  2. Dgroup: DG01573 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ate semisodium (INN) ... D00710 ... Valproate sodium (USAN); Sodium valproate (JP17) ... D08667 ... Calcium valproate DG01006 ... Flunar...izine ... D07971 ... Flunarizine (INN) ... D01303 ... Flunarizine hydrochloride (JAN/USAN) DG01382 ... E

  3. Dgroup: DG01430 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01430 Chemical ... DGroup Paclitaxel ... D00491 ... Paclitaxel (JAN/USP/INN) ... D05333 ... Paclitax...el poliglumex (USAN/INN) ... Antineoplastics, taxane TUBB [HSA:10381 10382 10383 203068 347688 347733 7280 81027 84617] [KO:K07375] ...

  4. The Need to Re-Conceptualize African 'Traditional' Religion

    African Journals Online (AJOL)

    First Lady

    definitions of religion, point out the areas of misconception about African religion ... concrete deity or not‖ by William James (1902) opens up the idea of religion .... a belief which is also very central in the Judeo-Christian faith, especially in.

  5. Dgroup: DG01630 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01630 DGroup beta-Estrogen receptor agonist -berel ... D06631 ... Prinaberel (USAN/INN...) D09899 ... Erteberel (USAN/INN) Other ... DG01584 ... Estrogen receptor agonist ... NR3A2 (ESR2) [HSA:2100] [KO:K08551] ...

  6. Concept of restaurant reservations information system

    OpenAIRE

    Štok, Janez

    2016-01-01

    In our home place we have only one inn. It's occupied mostly from Italian guests. Times are changing and buying power of Italians has declining since world financial collapse. Some fellow villagers has got an idea to rent some rooms for tourists. Inn is popular choice among guests, because is in walking distance of rooms. There is a problem with knowledge of languages, with that in mind owner of inn decided to contact me and explain the problem. There is need to create some sort of Android ap...

  7. Dgroup: DG01152 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01152 Chemical ... DGroup Edetate ... D00052 ... Edetic acid (NF/INN) D00571 ... Edetate calcium disodium... anhydrous (USP) D01802 ... Edetate disodium (USP); Disodium edetate hydrate (JP17) D03943 ... Edetate calcium disodium... (USP); Calcium sodium edetate hydrate (JP17); Sodium calcium edetate (INN) ... D03944 ... Ed...etate dipotassium (USAN) D03945 ... Disodium edetate D03946 ... Edetate sodium (USAN) D03947 ... Edetate trisodium... (USAN) D07934 ... Edetate calcium disodium D07935 ... Dicobalt edetate (INN) Other ... DG01692 ... Chelator ATC code: V03AB03 Antidotes, Chelating agents ...

  8. Novel transformation-based response prediction of shear building ...

    Indian Academy of Sciences (India)

    c Indian Academy of Sciences ... structural response of multi-storey shear buildings subject to earthquake motion. The INN is first ... China has been presented by Xie et al. (2011). ... research works have been done using INN in other fields.

  9. The Place Where Hope Lives

    Science.gov (United States)

    ... Inn at NIH comforts kids and their families. Children need the comfort and security of their families—especially when they are being treated for a life-threatening illness far from home. The Children's Inn is a private, non-profit, family-centered ...

  10. HOTEL INFORMATION

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Holiday Inn Chang An West Beijing On March 28,Conformity Assessment Services Co.under China Certification and Inspection Group held a grand ceremony to award certificates to Holiday Inn Chang An West Beijing,which has successfully passed the four managem

  11. Goddess Traditions in Tantric Hinduism

    DEFF Research Database (Denmark)

    Hinduism cannot be understood without the Great Goddess and the goddess-orientated Śākta traditions. The Goddess pervades Hinduism at all levels, from aniconic village deities to high-caste pan-Hindu goddesses to esoteric, tantric goddesses. Nevertheless, the highly influential tantric forms...

  12. Dgroup: DG01455 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ... D05206 ... Norepinephrine bitartr...USP); Isoprenaline sulfate (JAN) ... D02150 ... l-Isoprenaline hydrochloride (JP17) ... DG00212 ... Norepinephrine ... D00076 ... Noradrenaline...DG00212 ... Norepinephrine ... D00076 ... Noradrenaline (JP17); Norepinephrine (INN) ...

  13. En ny flugt ind i skoven

    DEFF Research Database (Denmark)

    Haarder, Jon Helt

    2008-01-01

    Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner......Thure Erik Lund: IND. (Inn). Oversat fra norsk af Sara Koch. 192 sider, 199 kr. Gyldendal. UDKOMMER I DAG. Fire stjerner...

  14. InN-based heterojunction photodetector with extended infrared response

    KAUST Repository

    Hsu, Lung-Hsing

    2015-11-21

    © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

  15. InN-based heterojunction photodetector with extended infrared response

    KAUST Repository

    Hsu, Lung-Hsing; Kuo, Chien-Ting; Huang, Jhih-Kai; Hsu, Shun-Chieh; Lee, Hsin-Ying; Kuo, Hao-Chung; Lee, Po-Tsung; Tsai, Yu-Lin; Hwang, Yi-Chia; Su, Chen-Feng; He, Jr-Hau; Lin, Shih-Yen; Cheng, Yuh-Jen; Lin, Chien-Chung

    2015-01-01

    © 2015 Optical Society of America. The combination of ZnO, InN, and GaN epitaxial layers is explored to provide long wavelength photodetection capability in the GaN based materials. Growth temperature optimization was performed to obtain the best quality of InN epitaxial layer in the MOCVD system. The temperature dependent photoluminescence (PL) can provide the information about thermal quenching in the InN PL transitions and at least two nonradiative processes can be observed. X-ray diffraction and energy dispersive spectroscopy are applied to confirm the inclusion of indium and the formation of InN layer. The band alignment of such system shows a typical double heterojunction, which is preferred in optoelectronic device operation. The photodetector manufactured by this ZnO/GaN/InN layer can exhibit extended long-wavelength quantum efficiency, as high as 3.55%, and very strong photocurrent response under solar simulator illumination.

  16. Roman religion and indigenous religion in Celtiberian cities | Religión romana y religión indígena en las ciudades de la céltica hispana

    Directory of Open Access Journals (Sweden)

    Juan Carlos Olivares Pedreño

    2003-12-01

    Full Text Available The present paper studies the interaction between the Roman and indigenous cults in the cities of the Celtic area of the Iberian Peninsula. The diffusion of the cult to Roman deities in Hispania is evident, but it didn't have as consequence the elimination of autochthonous deities, since these stayed with a considerable solidity. It was in the cities where the religious romanization was more intense and it caused that only certain indigenous divinities were worshiped in them, mainly feminine and of popular character, related with the family and the fecundity, while the masculine indigenous deities with public character stayed in the rural communities. | El presente artículo estudia la interacción entre los cultos romanos e indígenas en las ciudades del área céltica de la Península Ibérica. La difusión del culto a deidades romanas en Hispania es evidente, pero ello no tuvo como consecuencia la eliminación de las deidades autóctonas, puesto que éstas pervivieron con una considerable solidez. Fue en las ciudades donde la romanización religiosa fue más intensa y ello contribuyó a que sólo determinadas divinidades indígenas fueran veneradas en ellas, principalmente femeninas y de carácter popular, relacionadas con la familia y la fecundidad, mientras que las deidades indígenas masculinas con un acusado carácter público y de identidad colectiva pervivieron en las comunidades rurales.

  17. Bronze railing from Mediana

    Directory of Open Access Journals (Sweden)

    Vasić Miloje R.

    2003-01-01

    Full Text Available The hoard containing components of bronze railing was discovered in trench 7 during excavations at Mediana in 2000. Railing consists of cancelli and herms with busts of deities between them. Railing was constructed in such a way that it was possible to disassemble and reassemble it. Three cancelli one fragmented semicancellus cast together with herm and herms, one with bust of Aesculapius and other with bust of Luna. It could be concluded that railing consisted of two segments with passage between them. Male deities were represented on the left segment of the railing and female deities on the right segment. Detailed analysis revealed that Aesculapius as well as Luna bear strong mark of classical Greek and Hellenistic art, which experienced some kind of renaissance in the time of Constantine I. It is very probable that we can recognize the portrait of Faustina, Constantine’s wife in the portrait of Luna. According to the historical events the railing could have been produced before 325 AD when Constantine definitively accepted Christianity at Council of Nicaea. It is difficult to say where the railing had been produced. It had been most probably brought to Mediana during the stay of emperor Julian in Niš in 361. The sculptures found in one room of the villa with peristyle had probably been brought at the same time. The apse of triclinium of this villa had most likely been arranged as small shrine with bronze railing at its entrance. The railing was buried in 378 after battle of Adrianople and invasion of Goths in diocese Dacia.

  18. Roman religion and indigenous religion in Celtiberian cities | Religión romana y religión indígena en las ciudades de la céltica hispana

    Directory of Open Access Journals (Sweden)

    Juan Carlos Olivares Pedreño

    2005-12-01

    Full Text Available The present paper studies the interaction between the Roman and indigenous cults in the cities of the Celtic area of the Iberian Peninsula. The diffusion of the cult to Roman deities in Hispania is evident, but it didn't have as consequence the elimination of autochthonous deities, since these stayed with a considerable solidity. It was in the cities where the religious romanization was more intense and it caused that only certain indigenous divinities were worshiped in them, mainly feminine and of popular character, related with the family and the fecundity, while the masculine indigenous deities with public character stayed in the rural communities. | El presente artículo estudia la interacción entre los cultos romanos e indígenas en las ciudades del área céltica de la Península Ibérica. La difusión del culto a deidades romanas en Hispania es evidente, pero ello no tuvo como consecuencia la eliminación de las deidades autóctonas, puesto que éstas pervivieron con una considerable solidez. Fue en las ciudades donde la romanización religiosa fue más intensa y ello contribuyó a que sólo determinadas divinidades indígenas fueran veneradas en ellas, principalmente femeninas y de carácter popular, relacionadas con la familia y la fecundidad, mientras que las deidades indígenas masculinas con un acusado carácter público y de identidad colectiva pervivieron en las comunidades rurales.

  19. HOTEL INFORMATION

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The Holiday Inn Beijing Focus Square Holiday Inn Beijing Focus Square is the newest and tallest international mid-scale hotel at Wangjing’s famous business hub which is within walking distance of many multinational companies and surrounded by a variety of dining and shopping outlets.

  20. VIKOR Method for Interval Neutrosophic Multiple Attribute Group Decision-Making

    Directory of Open Access Journals (Sweden)

    Yu-Han Huang

    2017-11-01

    Full Text Available In this paper, we will extend the VIKOR (VIsekriterijumska optimizacija i KOmpromisno Resenje method to multiple attribute group decision-making (MAGDM with interval neutrosophic numbers (INNs. Firstly, the basic concepts of INNs are briefly presented. The method first aggregates all individual decision-makers’ assessment information based on an interval neutrosophic weighted averaging (INWA operator, and then employs the extended classical VIKOR method to solve MAGDM problems with INNs. The validity and stability of this method are verified by example analysis and sensitivity analysis, and its superiority is illustrated by a comparison with the existing methods.

  1. Undead Blond Hair in the Victorian Imagination: The Hungarian Roots of Bram Stoker’s "The Secret of the Growing Gold"

    Directory of Open Access Journals (Sweden)

    Abigail Heiniger

    2011-01-01

    Full Text Available The Hungarian folktale “Woman with Hair of Gold” is a part of what Nina Auerbach calls feminine mythos in Woman and the Demon. It is a story about the murder and revenge of a “very strange but beautiful woman with golden hair as fine as spun gold.” This paper explores how Bram Stoker’s short story “The Secret of the Growing Gold” reworks this folktale, stripping away its uniquely feminine voice, to create a story expressing British Victorian racial anxieties. The message of Teutonic superiority, which Stoker links with Hungarian folklore, is this author’s most dangerous and nefarious fiction.

  2. Lodging in Boulder and Louisville, Colorado | NREL

    Science.gov (United States)

    Leadership Community Education Center Economic Impact Environment, Health, & Safety Sustainability Energy : 720-587-3014 Comfort Inn 1196 W. Dillon Road Louisville, CO 80027 Phone: 303-604-0181 Courtyard by Marriott 948 West Dillon Road Louisville, CO 303-604-0007 Hampton Inn 912 W. Dillon Road Louisville, CO

  3. Something of Value: How Franchise Sellers Make Training Pay

    Science.gov (United States)

    Berger, Gladys

    1975-01-01

    Training can be the most important benefit included in the purchase of a franchise. Several of these training programs used by franchise sellers (Castro Convertibles, Roto-Rooter, H and R Block, Dunhill Personnel Systems Inc., Carvel, Holiday Inns, Sheraton Inns Inc., McDonald's) are discussed. (Author/BP)

  4. Influence of the GaN spacer thickness on the structural and photoluminescence properties of multi-stack InN/GaN quantum dots

    International Nuclear Information System (INIS)

    Ke, Wen-Cheng; Lee, Shuo-Jen; Chen, Shiow-Long; Kao, Chia-Yu; Houng, Wei-Chung; Wei, Chih-An; Su, Yi-Ru

    2012-01-01

    Highlights: ► We present structural and photoluminescence characteristics of multi-stack InN/GaN QDs. ► A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs. ► The PL intensity of the three-layer stacked sample is about 3 times that of the single-layer sample. - Abstract: This paper reports the structural and photoluminescence (PL) characteristics of single-layer and multi-stack InN/GaN quantum dots (QDs) with varying spacer thickness. A single crystalline 10-nm thick GaN capping layer is grown on the InN QDs by the flow-rate modulation epitaxy (FME) method. The PL peak is red shifted down to 18 meV and its full width at half maximum (FWHM) was narrowed from 104 meV to 77 meV as increasing GaN capping layer thickness to 20-nm. The red-shift and the linewidth narrowing of the PL spectra for the single-layer InN QDs as a result of the increase in capping thickness are believed to be due to the fact that the GaN capping layer decreases the surface defect density thereby decreasing the surface electron concentration of the InN QDs. However, the PL intensity decreases rapidly with the increase in GaN spacer thickness for the three-layer stacked InN/GaN QDs. Because of kinetic roughening, the 20-nm thick GaN capping layer shows a roughened surface. This roughened GaN capping layer degrades the InN QDs growth in the next layer of multi-stack InN QDs. In addition, the increased compressive strain on the InN QDs with the increase in GaN spacer thickness increases the defect density at the InN/GaN capped interface and will further decrease the PL intensity. After the GaN spacer thickness is modified, the PL intensity of the three-layer stacked sample with a 10-nm thick GaN spacer layer is about 3 times that of the single-layer sample.

  5. The changing landscape of sacred groves in Kerala (India): A critical view on the role of religion in nature conservation

    NARCIS (Netherlands)

    Notermans, C.D.; Nugteren, A.; Sunny, S.

    2016-01-01

    Sacred groves are an age-old and world-wide phenomenon, traditionally consisting of forest zones, protected by people based on their spiritual relationship with the deities or ancestral spirits believed to reside there. India alone counts nearly 50,000 sacred groves, with 2000 in Kerala where they

  6. Five Stones – Four Rivers – One Town

    DEFF Research Database (Denmark)

    Aktor, Mikael

    2016-01-01

    in northern Nepal to Vallam Town in Tamil Nadu. The chapter examines each of these stones – their visual qualities and their mythological and iconographical associations with their respective deities, the collection, manufacturing and marketing, as well as their present ritual use. It will bring to light...

  7. 76 FR 12340 - Gulf of Mexico Fishery Management Council; Public Meetings

    Science.gov (United States)

    2011-03-07

    ...: Tuesday, March 22, 2011, Hilton St. Petersburg Carillon Parkway, 950 Lake Carillon Drive, St. Petersburg...., Key West, FL, telephone: (305) 295-5000; Monday, March 28, 2011, Hilton Garden Inn, 4535 Williams Blvd., Kenner, LA, telephone: (504) 712-0504 Tuesday, March 29, 2011, Hilton Garden Inn, 14108 Airport Rd...

  8. Journal of Earth System Science | Indian Academy of Sciences

    Indian Academy of Sciences (India)

    Present paper uses powerful technique of interval neural network (INN) to simulate and estimate structural response of multi-storey shear buildings subject to earthquake motion. The INN is first trained for a real earthquake data, viz., the ground acceleration as input and the numerically generated responses of different ...

  9. Dgroup: DG01746 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 48 ... Loop diuretic ... Loop diuretics, sulfonamide SLC12A1 (NKCC2) [HSA:6557] [KO:K14425] SLC12A2 (NKCC1) [HSA:6558] [KO:K10951] ... ...P17/USP/INN) ... D01634 ... Piretanide (JAN/USAN/INN) Cardiovascular agent ... DG01690 ... Sulfonamide diuretic ... DG017

  10. 77 FR 36396 - Safety Zones; Fireworks Displays in Captain of the Port Long Island Sound Zone

    Science.gov (United States)

    2012-06-19

    ... viewing or submitting material to the docket, call Renee V. Wright, Program Manager, Docket Operations... Fireworks. South Bay off Snapper Inn Restaurant, Oakdale, NY. 5. North Bay 4th of July Fireworks... p.m. Location: A point on the Connetquot River off Snapper Inn Restaurant, Oakdale, NY in...

  11. Practical approaches to spiritual pain.

    Science.gov (United States)

    Brunjes, George B

    2010-01-01

    Spiritual pain/suffering is commonly experienced by persons with life-limiting illness and their families. Physical pain itself can be exacerbated by non-physical causes such as fear, anxiety, grief, unresolved guilt, depression and unmet spiritual meets. Likewise, the inability to manage physical pain well can be due to emotional and spiritual needs. This is why a holistic, interdisciplinary assessment of pain and suffering is required for each patient and family. The mind, body and spirit are understood in relationship to each other and, in those cases, in relationship to a deity or deities are important to understand. Cultural interpretations of pain and suffering may conflict with the goals of palliative care. Understanding the spiritual framework of the patient and family can help to assure that the physical and spiritual suffering of the patient can be eliminated to provide a peaceful death. Spiritual practices may help in the management of physical pain.

  12. Spiritual pain and suffering.

    Science.gov (United States)

    Brunjes, George B

    2010-01-01

    Spiritual pain/suffering is commonly experienced by persons with life-limiting illness and their families. Physical pain itself can be exacerbated by non-physical causes such as fear, anxiety, grief, unresolved guilt, depression and unmet spiritual meets. Likewise, the inability to manage physical pain well can be due to emotional and spiritual needs. This is why a holistic, interdisciplinary assessment of pain and suffering is required for each patient and family. The mind, body and spirit are understood in relationship to each other and, in those cases, in relationship to a deity or deities are important to understand. Cultural interpretations of pain and suffering may conflict with the goals of palliative care. Understanding the spiritual framework of the patient and family can help to assure that the physical and spiritual suffering of the patient can be eliminated to provide a peaceful death. Spiritual practices may help in the management of physical pain.

  13. Vergil, Georgics 1.1-42 and the pompa circensis

    Directory of Open Access Journals (Sweden)

    Jocelyne Nelis-Clément

    2011-11-01

    Full Text Available In this paper we attempt to show that the prologue of the first book of the Georgics, in which a series of deities is invoked to preside over the beginning of Vergil’s text, should be related to the pompa circensis, the grand procession of deities which preceded the celebration of the ludi circenses. The Vergilian passage is compared with the descriptions of the pompa to be found in Dionysius of Halicarnassus, Roman Antiquities 7.72.1-18 and Ovid, Amores 3.2. It is also discussed in relation to the prologue of Georgics 3, where a pompa is explicitly mentioned. In addition, we relate the prologue’s prediction of Octavian’s apotheosis to the fact that the pompa circensis was Rome’s most remarkable display of images of the gods and hence a major focus for the categorization of the divine, particularly in Triumviral and early Augustan Rome.

  14. Chemical synthesis of hexagonal indium nitride nanocrystallines at low temperature

    Science.gov (United States)

    Wang, Liangbiao; Shen, Qianli; Zhao, Dejian; Lu, Juanjuan; Liu, Weiqiao; Zhang, Junhao; Bao, Keyan; Zhou, Quanfa

    2017-08-01

    In this study, hexagonal indium nitride nanocystallines with high crystallinity have been prepared by the reaction of InCl3·4H2O, sulfur and NaNH2 in an autoclave at 160 °C. The crystal structures and morphologies of the obtained InN sample are characterized by X-ray diffraction and scanning electron microscope. As InCl3·4H2O is substituted by In(NO3)3·4.5H2O, InN nanocrystallines could also be obtained by using the similar method. The photoluminescence spectrum shows that the InN emits a broad peak positioned at 2.3 eV.

  15. 75 FR 65263 - Virginia Graeme Baker Pool and Spa Safety Act; Public Accommodation; Withdrawal of Proposed Rule

    Science.gov (United States)

    2010-10-22

    ...'' or ``Act'') as ``an inn, hotel, motel, or other place of lodging, except for an establishment located... interpretive rule to interpret ``public accommodations facility'' in the VGB Act as ``an inn, hotel, motel, or... CONSUMER PRODUCT SAFETY COMMISSION 16 CFR Part 1450 Virginia Graeme Baker Pool and Spa Safety Act...

  16. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  17. Longitudinal polar optical phonons in InN/GaN single and double het- erostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ardali, Sukru; Tiras, Engin [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, Eskisehir 26470 (Turkey); Gunes, Mustafa; Balkan, Naci [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ (United Kingdom); Ajagunna, Adebowale Olufunso; Iliopoulos, Eleftherios; Georgakilas, Alexandros [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion-Crete (Greece)

    2011-05-15

    Longitudinal optical phonon energy in InN epi-layers has been determined independently from the Raman spectroscopy and temperature dependent Hall mobility measurements. Raman spectroscopy technique can be used to obtain directly the LO energy where LO phonon scattering dominates transport at high temperature. Moreover, the Hall mobility is determined by the scattering of electrons with LO phonons so the data for the temperature dependence of Hall mobility have been used to calculate the effective energy of longitudinal optical phonons.The samples investigated were (i) single heterojunction InN with thicknesses of 1.08, 2.07 and 4.7 {mu}m grown onto a 40 nm GaN buffer and (ii) GaN/InN/AlN double heterojunction samples with InN thicknesses of 0.4, 0.6 and 0.8 {mu}m. Hall Effect measurements were carried out as a function of temperature in the range between T = 1.7 and 275 K at fixed magnetic and electric fields. The Raman spectra were obtained at room temperature. In the experiments, the 532 nm line of a nitrogen laser was used as the excitation source and the light was incident onto the samples along of the growth direction (c-axis). The results, obtained from the two independent techniques suggest the following: (1) LO phonon energies obtained from momentum relaxation experiments are generally slightly higher than those obtained from the Raman spectra. (2) LO phonon energy for the single heterojunctions does not depend on the InN thickness. (3) In double heterostructures, with smaller InN thicknesses and hence with increased strain, LO phonon energy increases by 3% (experimental accuracy is < 1%) when the InN layer thickness increases from 400 to 800 nm (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Patient Safety in Medication Nomenclature: Orthographic and Semantic Properties of International Nonproprietary Names.

    Directory of Open Access Journals (Sweden)

    Rachel Bryan

    Full Text Available Confusion between look-alike and sound-alike (LASA medication names (such as mercaptamine and mercaptopurine accounts for up to one in four medication errors, threatening patient safety. Error reduction strategies include computerized physician order entry interventions, and 'Tall Man' lettering. The purpose of this study is to explore the medication name designation process, to elucidate properties that may prime the risk of confusion.We analysed the formal and semantic properties of 7,987 International Non-proprietary Names (INNs, in relation to naming guidelines of the World Health Organization (WHO INN programme, and have identified potential for errors. We explored: their linguistic properties, the underlying taxonomy of stems to indicate pharmacological interrelationships, and similarities between INNs. We used Microsoft Excel for analysis, including calculation of Levenshtein edit distance (LED. Compliance with WHO naming guidelines was inconsistent. Since the 1970s there has been a trend towards compliance in formal properties, such as word length, but longer names published in the 1950s and 1960s are still in use. The stems used to show pharmacological interrelationships are not spelled consistently and the guidelines do not impose an unequivocal order on them, making the meanings of INNs difficult to understand. Pairs of INNs sharing a stem (appropriately or not often have high levels of similarity (<5 LED, and thus have greater potential for confusion.We have revealed a tension between WHO guidelines stipulating use of stems to denote meaning, and the aim of reducing similarities in nomenclature. To mitigate this tension and reduce the risk of confusion, the stem system should be made clear and well ordered, so as to avoid compounding the risk of confusion at the clinical level. The interplay between the different WHO INN naming principles should be further examined, to better understand their implications for the problem of LASA

  19. Dgroup: DG00410 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00410 Chemical ... DGroup Methylprednisolone ... D00407 ... Methylprednisolone (JP17/USP.../INN) ... D00751 ... Methylprednisolone sodium succinate (JAN/USP) ... D00979 ... Methylprednisolone acetate (JAN/US...P) ... D05000 ... Methylprednisolone hemisuccinate (USP); Methylprednisolone succinate (JP17) D05001 ... Methylprednisolo...ne sodium phosphate (USAN) D05002 ... Methylprednisolone suleptanate (USAN/INN) D07203 ... Methylprednisol

  20. 78 FR 34349 - Schedules for Atlantic Shark Identification Workshops and Protected Species Safe Handling...

    Science.gov (United States)

    2013-06-07

    ...; Kenner, LA; Charleston, SC; and Corpus Christi, TX. See SUPPLEMENTARY INFORMATION for further details on... Inn & Suites, 3312 Vista Drive, Rosenberg, TX 77471. 3. September 12, 2013, 12 p.m.-4 p.m., Holiday..., Kenner, LA 70062. 5. September 10, 2013, 9 a.m.-5 p.m., Holiday Inn, 301 Savannah Highway, Charleston, SC...

  1. Regulering, ikke kriminalisering

    DEFF Research Database (Denmark)

    Ludvigsen, Stian Skår; Sieberg, Katri K.

    2007-01-01

    Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye.......Kriminalisering av horekunder vil føre til at markedet for seksuelle tjenester skyves inn i det skjulte.  Skjer dette, kan kostnadene bli høye....

  2. Transformation of the Image

    DEFF Research Database (Denmark)

    Middlemas, Jill

    2009-01-01

    reveals that in every case the book of Ezekiel establishes a distance between divinity and forms. How items of a visual nature are employed contribute to a wider discussion about the imago dei and theories about the closest representations of the deity of ancient Israel as a human being, most frequently...

  3. The "others" in a lex sacra from the Attic deme Phrearrhioi (SEG 35.113)

    NARCIS (Netherlands)

    Wijma, Sara

    2013-01-01

    Previous scholarship has mainly focussed on the issuing body, the nature of the rites and deities mentioned in the decree and possible associations with known polis festival, and the nature of the Eleusinion named thrice (9; 18; 23). Here, I want to focus on the group of participants who are

  4. Hymns

    DEFF Research Database (Denmark)

    Lech, Marcel Lysgaard

    2017-01-01

    Hymns as sung prayers to deities. Just as these were frequent in the everyday life of an Athenian, hymns occur frequently in Old Comedy. In its use of hymns comedy reflects this everyday practice, but the comic playwrights also use hymns light-heartedly for comic purposes such as parody. Hymns...

  5. 78 FR 36748 - Caribbean Fishery Management Council; Scoping Meetings

    Science.gov (United States)

    2013-06-19

    .... ADDRESSES: The scoping meetings will be held in Puerto Rico and in the U.S. Virgin Islands. See....--Holiday Inn Ponce & Tropical Casino, 3315 Ponce By Pass, Ponce, Puerto Rico. July 10, 2013-7 p.m.--Mayag[uuml]ez Holiday Inn, 2701 Hostos Avenue, Mayag[uuml]ez, Puerto Rico. July 11, 2013-7 p.m.--Asociaci...

  6. Counselling People with Special Needs in Rural Settings | Ajobiewe ...

    African Journals Online (AJOL)

    The traditional healer has a peculiar way of consulting with the spirits or deity using various tools, such as, alcoholic drinks, kolanuts, palm wine, chicken/goats etc. They are professionals in their own field and people in their immediate communities, disabled or not disabled, have easy access to their services. However, in ...

  7. Growth and characterisation of group-III nitride-based nanowires for devices

    Energy Technology Data Exchange (ETDEWEB)

    Meijers, R J

    2007-08-30

    One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature T{sub sub} has been studied leading to the conclusion that the III-V ratio determines the growth mode. Ga desorption limits the temperature range to grow GaN nanowires and dissociation of InN is the limiting factor for InN nanowire growth. A reduction of the surface diffusivity on polar surfaces under N-rich conditions explains the anisotropic growth. Growth kinetics of the nanowires show that there are two important contributions to the growth. The first is growth by direct impingement and its contribution is independent of the nanowire diameter. The second contribution comes from atoms, which absorb on the substrate or wire sidewalls and diffuse along the sidewalls to the top of the wire, which acts as an effective sink for the adatoms due to a reduced surface mobility on the polar top of the wires. This diffusion channel, which is enhanced at higher T{sub sub}, becomes more significant for smaller wire diameters, because its contribution scales like 1/d. Experiments with an interruption of the growth and sharp interfaces in TEM images of heterostructures show that the suggestion in literature of a droplet-mediated PA-MBE nitride growth has to be discarded. Despite a thin amorphous silicon nitride wetting layer on the substrate surface, both GaN and InN nanowires grow in the wurtzite structure and epitaxially in a one-to-one relation to the Si(111) substrate surface. There is no evidence for cubic phases. TEM images and optical studies display a high crystalline and optical quality of GaN and InN nanowires. The substrate induces some strain in the bottom part of the nanowires, especially in InN due to the lower T{sub sub} than for GaN, which is released without the formation of dislocations. Only some stacking

  8. 124 The Relevance of Ali (Earth Deity): Ritual Forms And Processes ...

    African Journals Online (AJOL)

    Tracie1

    remained a rhythm of significance in man's response to the sacred and his experience within the .... prototypes the repetition of the action of divine beings or mythical ancestors,” a .... changing and moving concerns of life. For the African, the ...

  9. Business Case Analysis: Increasing Air Force Dining Hall Use as an Alternative to Closure

    Science.gov (United States)

    2011-12-01

    work on 3 new food stations at the Sierra Inn, as well as a daily buffet line. They introduced a new deli, grill, and salad bar as well as a “Just4U...courses, starches, and vegetables, it is not uncommon for the Sierra Inn to offer six to eight main courses, a sandwich bar, soup and salad bar, and

  10. Prime Contract Awards Alphabetically by Contractor, by State or Country, and Place, Fiscal Year 1987. Part 17. Southwest Ordnance Supply-Taylor-Made Hose, Incorporated.

    Science.gov (United States)

    1987-01-01

    COI0)000 .....0)00)0)0)00)CO0)0M0)0)0 0 0 0 0 0 0 -0 004 �I( lf~l- 0 0 0 0 0 0 GAO 001,- I-I I 04) 0 𔃺)00) 1 4 .I ww1- 0)00) I C14 ’) N 4 -1 0) N4...LAVLOc)n 40 MI-4 0 4 04 N 4 NJ(’J 0 C IN N 1 1 1 nCci ( CA INN "N INN eq4 IN N C04(󈧈 M 740-40 IC4 4 ൌ’J" (𔃾INNV (𔃾 INN C/-J (d)N NC𔃾("’C44 (- JiNI "N

  11. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    International Nuclear Information System (INIS)

    Koukoula, T.; Kioseoglou, J.; Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-01-01

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001 ¯ ) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN

  12. Transformation in Dang-ki Healing: The Embodied Self and Perceived Legitimacy.

    Science.gov (United States)

    Lee, Boon-Ooi

    2016-09-01

    Since spirit possession in mediumship and shamanism resembles psychotic symptoms, early researchers perceived spirit mediums and shamans as psychiatric patients whose psychopathology was culturally sanctioned. However, other researchers have not only challenged this assumption, but also proposed that spirit possession has transformative benefits. The idiom of spirit possession provides cultural meanings for spirit mediums and shamans to express and transform their personal experiences. The present case study focuses on dang-ki healing, a form of Chinese mediumship practiced in Singapore, in which a deity possesses a human (i.e., dang-ki) to offer aid to supplicants. This study seeks to explore whether involvement in dang-ki healing is transformative; and if so, how the dang-ki's transformation is related to his self and the perceived legitimacy of his mediumship. At a shrine, I interviewed 20 participants, including a male dang-ki, 10 temple assistants, and nine clients. The results obtained were supportive of the therapeutic nature of spirit possession. First, there is a relationship between his self-transformation and the perceived legitimacy of his mediumship. As his clients and community have recognized his spirit possession as genuine, and the healing power of his possessing god, he is able to make use of mediumship as a means for spiritual development. Second, he has developed his spirituality by internalizing his god's positive traits (e.g., compassion). Deities worshipped in dang-ki healing can be conceptualized as ideal selves who represent a wide range of positive traits and moral values of Chinese culture. Thus, the possession of a deity is the embodiment of an ideal self. Finally, the dang-ki's transformation may run parallel to his god's transformation. In Chinese religions, gods have to constantly develop their spirituality even though they are already gods. An understanding of the god's spiritual development further sheds light on the dang-ki's self-transformation.

  13. An artistic and mythological study of a Nabatean female Sphinx from Petra, Jordan.

    Science.gov (United States)

    Almasri, Eyad R.; Al-Ajlouny, Fardous K.; Alghazawi, Raed Y.

    In 1967 the Group of Sculptures was discovered in Petra during clearance works organized by the Department of Antiquities in Jordan in the Temenos of Qasr el Bint around the Temenos Gate. One of these sculptures was a high relief statue of a female sphinx. Due to the paucity of information about this statue, this paper has been written to answer a number of questions: What was its original site or monument? When was it made? Who was the deity or deities it represented? Could there be another interpretation of its existence? The answers to the above provide enlightenment of Nabataean styles of carvings and an insight into their religious thoughts. Rgarding the interpretation of the Female Sphinx. Three ideas have been suggested. First, it can be the main Nabataean goddess Allat, "the mother of the gods". Second, it is an image of Petra as a goddess. Third, it is carved on the Temenos Gate as a guardian of Petra city in general and its holy monuments like temples and tombs in particular.

  14. Design strategies for enhancing carrier localization in InGaN-based light-emitting diodes

    International Nuclear Information System (INIS)

    Yang, Yujue; Ma, Ping; Wei, Xuecheng; Yan, Dan; Wang, Yafang; Zeng, Yiping

    2014-01-01

    By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced by demonstrating temperature-dependent photoluminescence (PL) measurements. Two emission peaks corresponding to In-rich localized state and quantum well ground state emissions are observed from the electroluminescence (EL) spectra, which demonstrates that the phase separation takes place in our designed structures and the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization and hence improved light-emission characteristics. Therefore, it is suggested that enhancing localization is possible, to some extent, by modulating the QW structures with the introduction of the GaN and InN interlayers for superior light-emission performances in InGaN-based light-emitting diodes (LEDs). Moreover, the nonradiative channel probably associated with InN droplet is proved to be existent from the Arrhenius plots in our InGaN–delta-InN MQW structure. - Highlights: • By designing the quantum well structure with the introduction of GaN and InN interlayers into the InGaN wells, the carrier localization is enhanced. • Two emission peaks observed from electroluminescence (EL) spectra demonstrate that the enhanced phase separation is most likely the dominated mechanism for the formation of In-rich localized states, accounting for the stronger localization. • The nonradiative channel associated with InN droplet is proved to be existent from the Arrhenius plots

  15. InN/GaN short-period superlattices as ordered InGaN ternary alloys

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

    2016-01-01

    Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Effect of nitrogen addition on the structural, electrical, and optical properties of In-Sn-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Junjun, E-mail: jia@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Torigoshi, Yoshifumi; Suko, Ayaka; Nakamura, Shin-ichi [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan); Kawashima, Emi; Utsuno, Futoshi [Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293 (Japan); Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp [Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara, Kanagawa 252-5258 (Japan)

    2017-02-28

    Highlights: • Nitrogen addition induces the structure of ITZO film change from amorphous phase to a c-axis oriented InN polycrystalline phase. • Nitrogen addition suppressed the formation of oxygen-related vacancies in ITZO films. • A red-shift in the optical band edge for ITZO films was observed as the nitrogen flow ratio increased, which was due to the generation of InN crystallites. - Abstract: Indium-tin-zinc oxide (ITZO) films were deposited at various nitrogen flow ratios using magnetron sputtering. At a nitrogen flow ratio of 40%, the structure of ITZO film changed from amorphous, with a short-range-ordered In{sub 2}O{sub 3} phase, to a c-axis oriented InN polycrystalline phase, where InN starts to nucleate from an amorphous In{sub 2}O{sub 3} matrix. Whereas, nitrogen addition had no obvious effect on the structure of indium-gallium-zinc oxide (IGZO) films even at a nitrogen flow ratio of 100%. Nitrogen addition also suppressed the formation of oxygen-related vacancies in ITZO films when the nitrogen flow ratio was less than 20%, and higher nitrogen addition led to an increase in carrier density. Moreover, a red-shift in the optical band edge was observed as the nitrogen flow ratio increased, which could be attributed to the generation of InN crystallites. We anticipate that the present findings demonstrating nitrogen-addition induced structural changes can help to understand the environment-dependent instability in amorphous IGZO or ITZO based thin-film transistors (TFTs).

  17. AFRREV, 9(1), S/NO 36, JANUARY, 2015

    African Journals Online (AJOL)

    EMILIA

    values are fast shifting with changes in Ikwerre religious beliefs and practices. Records such ... to Ali deity. However, the story of the impact of Christianity and other agents .... eat food cooked by a woman in menstruation, or to sit or have sexual intercourse on .... It was the fear that one might die bad death either with swollen ...

  18. “You are my rock and fortress”. Refuge metaphors in Psalm 31. a ...

    African Journals Online (AJOL)

    The psalms of lamentation are prayers of a beleaguered individual or nation. The one under constant attack of the enemy has no other option but to implore the deity to intervene on his behalf. Yahweh is invoked to save the supplicant and to destroy the adversaries. Apart from this recurrent plea, Yahweh is often depicted as ...

  19. Teaching "Doctor Faustus" through the "Ars Moriendi" Tradition

    Science.gov (United States)

    Fike, Matthew

    2008-01-01

    The rough edges in Christopher Marlowe's intellectual life serve as a foil to the mainstream Christianity in "Doctor Faustus": the playwright had a reputation for atheism or at least for unorthodox opinions; papers allegedly found in a writing room that he shared with Thomas Kyd denied the deity of Christ; and twelve days before he was…

  20. The Hindu pañcāyatanapūjā in the aniconism spectrum

    DEFF Research Database (Denmark)

    Aktor, Mikael

    2017-01-01

    The Hindu pañcāyatanapūjā is the worship of five deities that can be in the form of five stones collected from various locations in South Asia. Each of these stones has visual properties which form points of reference to the iconography of the same gods’ anthropomorphic forms. And although the ri...

  1. Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Songrui Zhao

    2017-09-01

    Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

  2. Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

    International Nuclear Information System (INIS)

    Oliva, R.; Segura, A.; Ibáñez, J.; Artús, L.; Yamaguchi, T.; Nanishi, Y.

    2014-01-01

    We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε ∞ . Negative pressure coefficients of −8.8 × 10 −2  GPa −1 and −14.8 × 10 −2  GPa −1 are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases

  3. Dgroup: DG01727 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01727 DGroup Anthraquinone antineoplastic -antrone DG01727.gif DG00701 ... Mitoxantrone ... D08224 ... Mitoxantron...e (INN) ... D02166 ... Mitoxantrone hydrochloride (JAN/USP) ... DG00704 ... Pixantrone ... D05522 ... Pixantron...e (USAN/INN) ... D09654 ... Pixantrone dimaleate (USAN) D02894 ... Ametantrone acetate (USAN) D04685 ... Ledoxantron...e trihydrochloride (USAN) D04783 ... Losoxantrone hydrochloride (USAN) D05510 ... Piroxantron...e hydrochloride (USAN) D06059 ... Teloxantrone hydrochloride (USAN) D06190 ... Topixantrone (USAN/IN

  4. Religious Attachment and the Sense of Life Purpose among Emerging Adults

    Directory of Open Access Journals (Sweden)

    Julian Culver

    2017-12-01

    Full Text Available The salubrious association between religious involvement and well-being is evident among the general population of religious individuals. In particular, the sense of attachment to a deity is linked to promoting healthy behavior and positive well-being. The link between religious attachment and well-being is particularly salient for emerging adults during a life stage where they are developing their own sense of self while also renegotiating religious commitments. The current study uses OLS regression and a lagged dependent variable model to analyze how perceived closeness to God is linked to the sense of life purpose among a diverse, national sample of emerging adults. We find that relative to those perceiving closeness to God, those who reported feeling neutral or did not believe in God experienced lower levels of life purpose. Respondents who reported feeling distant from God had the lowest scores on the Life Purpose Index. The findings are examined within the framework of religion and attachment theory literature. The study encourages researchers to consider attachment to a deity as an important link in explaining well-being outcomes, especially among religious individuals.

  5. Dazzles, decoys, and deities : the Janus face of anti-facial recognition masks

    NARCIS (Netherlands)

    de Vries, P.B.

    2017-01-01

    Over the past few years a growing number of artists have critiqued the ubiquity of identity recognition technologies. Specifically, the use of these technologies by state security programs, tech-giants and multinational corporations has met with opposition and controversy. A popular form of

  6. Dgroup: DG00093 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00093 Chemical ... DGroup Prednisolone ... D00472 ... Prednisolone (JP17/USP/INN) ... D00980 ... Prednisolo...ne acetate (JP17/USP/INN) ... D00981 ... Prednisolone sodium phosphate (JP17/USP) ... D00982 ... Prednisolo...ne tebutate (JAN/USP) D01239 ... Prednisolone sodium succinate (JP17/USP) ... D01998 ... Prednisolone farnesy...late (JAN) ... D02156 ... Prednisolone hemisuccinate (USP); Prednisolone succinate (JP17) D03301 ... Prednisolo...ne valerate acetate (JAN) ... D08412 ... Prednisolone pivalate D08413 ... Prednisolone sodiu

  7. Cultural diversity in hospitality management : how to improve cultural diversity workforce

    OpenAIRE

    Korjala, Veera

    2013-01-01

    The bachelor´s thesis investigates cultural diversity in the hospitality management. It aims at presenting effective ways to improve cultural diversity in a workplace. This study was commissioned by JW Marriott San Antonio Hill Country Resort & Spa in Texas, USA and three hotels in Stillwater, Oklahoma, USA: Atherton Hotel, Hampton Inn & Suites and Residence Inn. The bachelor´s thesis incorporates culture theories and their applications to the workplace. Additionally, it focuses on cultural d...

  8. Solar hot water system installed at Las Vegas, Nevada. Final report

    Energy Technology Data Exchange (ETDEWEB)

    None

    1981-01-01

    The solar hot water system installed at LaQuinta Motor Inn Inc., at Las Vegas, Nevada is described. The Inn is a three-story building with a flat roof for installation of the solar panels. The system consists of 1200 square feet of liquid flat plate collectors, a 2500 gallon insulated vertical steel storage tank, two heat exchangers and pumps and controls. The system was designed to supply approximately 74 percent of the total hot water load.

  9. An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

    International Nuclear Information System (INIS)

    Wang, Shulong; Liu, Hongxia; Song, Xin; Guo, Yulong; Yang, Zhaonian

    2014-01-01

    This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ-A and Γ-M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell-Weisskopf and Brooks-Herring method) are also considered. (orig.)

  10. Pressure dependence of the refractive index in wurtzite and rocksalt indium nitride

    Energy Technology Data Exchange (ETDEWEB)

    Oliva, R. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Segura, A. [MALTA-Consolider Team, Departament de Física Aplicada, ICMUV, Universitat de València, c/Dr. Moliner 50, 46100 Burjassot, València (Spain); Ibáñez, J., E-mail: jibanez@ictja.csic.es; Artús, L. [Institut Jaume Almera, Consell Superior d' Investigacions Científiques (CSIC), Lluís Solé i Sabarís s.n., 08028 Barcelona, Catalonia (Spain); Yamaguchi, T.; Nanishi, Y. [Faculty of Science and Engineering, Ritsumeikan University, Shiga 525-8577 (Japan)

    2014-12-08

    We have performed high-pressure Fourier transform infrared reflectance measurements on a freestanding InN thin film to determine the refractive index of wurtzite InN and its high-pressure rocksalt phase as a function of hydrostatic pressure. From a fit to the experimental refractive-index curves including the effect of the high-energy optical gaps, phonons, free carriers, and the direct (fundamental) band-gap in the case of wurtzite InN, we obtain pressure coefficients for the low-frequency (electronic) dielectric constant ε{sub ∞}. Negative pressure coefficients of −8.8 × 10{sup −2 }GPa{sup −1} and −14.8 × 10{sup −2 }GPa{sup −1} are obtained for the wurtzite and rocksalt phases, respectively. The results are discussed in terms of the electronic band structure and the compressibility of both phases.

  11. Gods behaving badly.

    Science.gov (United States)

    Retsas, Spyros

    2015-02-01

    This paper addresses the myths surrounding the birth and death of Asclepios, the popular healing God of the Greeks and his place among other deities of the Greek Pantheon. The enigmatic invocation of Asclepios by Socrates, the Athenian philosopher condemned to take the hemlock, in his final moments is also discussed. © The Author(s) 2013 Reprints and permissions: sagepub.co.uk/journalsPermissions.nav.

  12. Spatial Analysis of Urban Master Plans of Towns in North-Eastern Poland in the Context of Urban Revalorisation

    Science.gov (United States)

    Zagroba, Marek; Klopotowski, Maciej

    2017-12-01

    The research subject raised in this study is the urban structure of small towns in Warmia, a region rich in history, situated in the north-eastern Poland. This area, together with the neighbouring region of Mazury, is referred to as the Land of a Thousand Lakes. The historical events, such as the conquest of this territory by the Teutonic Order in 13th century, gave rise to the foundation of twelve towns in Warmia, which have survived until our time. Of these settlements, only one, which is Olsztyn, grew to a larger size over the centuries and eventually became the capital of Warmia. The others are still small towns, with a population from a few to less than twenty thousand inhabitants. The policy and economic goals of the Teutonic Order underlay the spread of a uniform type of urban master plan in the entire region. The establishment of urban centres was dictated by military considerations - all towns had fortified castles and were 15-30 km distant from one another, which stemmed from the organisation of the Teutonic State. The location of new towns in Warmia coincided in time with the general urban planning principles governing urban development in the Middle Ages. The medieval towns, which grew on the foundations of ancient cultures, were developed on a regular grid of streets, delineating land lots for compact town houses and a central square serving as a market place. Within this structure, the town’s most significant spatial dominants, such as a town hall, a church and a fortified castle, were situated. The castle often stood on the outskirts of a town, as it had to be connected to the town’s fortifications. The location of medieval towns in Warmia proceeded according to a similar concept. All these towns are distinguished by characteristically medieval, regular urban layouts, which - while being similar - have certain intrinsic features. Differences can be seen in the design of main streets, the size and proportions of market squares, the ways in which

  13. InN/GaN Superlattices: Band Structures and Their Pressure Dependence

    DEFF Research Database (Denmark)

    Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

    2013-01-01

    Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

  14. Invaders in hot water: a simple decontamination method to prevent the accidental spread of aquatic invasive non-native species.

    Science.gov (United States)

    Anderson, Lucy G; Dunn, Alison M; Rosewarne, Paula J; Stebbing, Paul D

    Watersports equipment can act as a vector for the introduction and spread of invasive non native species (INNS) in freshwater environments. To support advice given to recreational water users under the UK Government's Check Clean Dry biosecurity campaign and ensure its effectiveness at killing a range of aquatic INNS, we conducted a survival experiment on seven INNS which pose a high risk to UK freshwaters. The efficacy of exposure to hot water (45 °C, 15 min) was tested as a method by which waters users could 'clean' their equipment and was compared to drying and a control group (no treatment). Hot water had caused 99 % mortality across all species 1 h after treatment and was more effective than drying at all time points (1 h: χ 2  = 117.24, p  clean equipment. We recommend that it is advocated in future biosecurity awareness campaigns.

  15. Broad supernatural punishment but not moralizing high gods precede the evolution of political complexity in Austronesia

    OpenAIRE

    Watts, Joseph; Greenhill, Simon J.; Atkinson, Quentin D.; Currie, Thomas E.; Bulbulia, Joseph; Gray, Russell D.

    2015-01-01

    Supernatural belief presents an explanatory challenge to evolutionary theorists—it is both costly and prevalent. One influential functional explanation claims that the imagined threat of supernatural punishment can suppress selfishness and enhance cooperation. Specifically, morally concerned supreme deities or ‘moralizing high gods' have been argued to reduce free-riding in large social groups, enabling believers to build the kind of complex societies that define modern humanity. Previous cro...

  16. Eg høyrer og eg gløymer, eg ser og eg huskar, eg gjer og eg forstår

    OpenAIRE

    Liavåg, Sturla Sætre

    2017-01-01

    Høgskulen på Vestlandet Avdeling for helsefag/ Institutt for sjukepleie/Campus Førde Slik som sjukepleiaryrket utviklar seg no til dags får sjukepleiaren meir og meir ansvar. Dette gjeld både sjukepleiarar som yrkesgruppe men og som enkeltpersonar. Ein kan oppleve å gå rett frå sjukepleiarstudiet og inn på ein arbeidsplass, og der oppleve å vere einaste sjukepleiar, og med stort ansvar. Som sjukepleiar stiller samfunnet både formelle og uformelle krav til kva ein skal site inne me...

  17. Det er fullt her inne!

    OpenAIRE

    Hay, Simen Formo

    2018-01-01

    Program og foto. Teaterforestilling vist 12., 13., 14., 16.-18. april 2018 på Seilduken Scene 6 Bacheloroppgave i regi, fra Teaterhøgskolen, med regi av Simen F.H.. Et avgangsprosjekt, med skuespillerne Ina Svenningdal, Sindre Hansen, Sarah Francesca Brænne, Brede Fristad, William Greni Arnø, Lars Halvor Andreassen. Bandet Elon Musk deltar, og kleskolleksjon lanseres av Alva Brosten / Hijacked. Foto: S. Hutton?

  18. India Basin 900 Innes Remediation

    Science.gov (United States)

    Lower Walnut Creek Restoration Project will restore and enhance coastal wetlands along southern shoreline of Suisun Bay from Suisun Bay upstream along Walnut Creek, improving habitat quality, diversity, and connectivity along three miles of creek channel.

  19. Powder-XRD and (14) N magic angle-spinning solid-state NMR spectroscopy of some metal nitrides.

    Science.gov (United States)

    Kempgens, Pierre; Britton, Jonathan

    2016-05-01

    Some metal nitrides (TiN, ZrN, InN, GaN, Ca3 N2 , Mg3 N2 , and Ge3 N4 ) have been studied by powder X-ray diffraction (XRD) and (14) N magic angle-spinning (MAS) solid-state NMR spectroscopy. For Ca3 N2 , Mg3 N2 , and Ge3 N4 , no (14) N NMR signal was observed. Low speed (νr  = 2 kHz for TiN, ZrN, and GaN; νr  = 1 kHz for InN) and 'high speed' (νr  = 15 kHz for TiN; νr  = 5 kHz for ZrN; νr  = 10 kHz for InN and GaN) MAS NMR experiments were performed. For TiN, ZrN, InN, and GaN, powder-XRD was used to identify the phases present in each sample. The number of peaks observed for each sample in their (14) N MAS solid-state NMR spectrum matches perfectly well with the number of nitrogen-containing phases identified by powder-XRD. The (14) N MAS solid-state NMR spectra are symmetric and dominated by the quadrupolar interaction. The envelopes of the spinning sidebands manifold are Lorentzian, and it is concluded that there is a distribution of the quadrupolar coupling constants Qcc 's arising from structural defects in the compounds studied. Copyright © 2015 John Wiley & Sons, Ltd.

  20. Sacred Groves: Myths, Beliefs, and Biodiversity Conservation—A Case Study from Western Himalaya, India

    Directory of Open Access Journals (Sweden)

    Sushma Singh

    2017-01-01

    Full Text Available Religious and traditional beliefs, cultural mores, and practices play a crucial role in the conservation of environment and biodiversity. The present paper describes a case study of two sacred groves in Western Himalaya. Sacred groves (SGs are patches of land that are communally protected with religious zeal. A preliminary survey was conducted in these SGs to study their role in biodiversity conservation. The data collected included the general information regarding the SGs and the associated deity, nearest human habitation, access to them, and their floral and faunal diversity. Ethnomedicinal property of plants was collected from the indigenous communities. Many taboos are associated with both the SGs, which help in managing resources well through ritual representation. Different festivals are organized, where the local communities reaffirm their commitment to the forest and the deity. Sacred groves, in general, are a valuable tool of biodiversity conservation. But people’s changing attitudes, erosion of traditional beliefs, and human impact have caused degradation of sacred groves over the years. Their conservation would not be possible without the active participation of the local people. By improving their living standards and by giving benefits of conservation to them, long-term conservation goals in these SGs can be achieved.

  1. Radiological protection and calibration of an activity meter with cesium and barium sources in a nuclear medicine center

    International Nuclear Information System (INIS)

    Morales L, M.E.

    2005-01-01

    Presently work is shown the results when gauging a team Deluxe Isotope (Caliper 11) with some sources of Cesium 137 and Barium 133, in a Center of Medicine Nuclear that operates from the anus 1983 in a modern building inside the one Institute of Illnesses Neoplasia (Inn). This Center was equipped initially with teams donated by the International Organism of Atomic Energy (Oa) with those that it develops assistance, educational works and of investigation, giving services to patient of the Inn and other public and private medical centers. (Author)

  2. Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids

    International Nuclear Information System (INIS)

    Lai, Wei-Jung; Li, Shao-Sian; Lin, Chih-Cheng; Kuo, Chun-Chiang; Chen, Chun-Wei; Chen, Kuei-Hsien; Chen, Li-Chyong

    2010-01-01

    We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current-voltage characteristic of the hybrid device demonstrates the typical p-n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The device shows a photoresponse range of 900-1260 nm under various reverse biases. An external quantum efficiency of 3.4% at 900 nm operated at -10 V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems.

  3. Radiological protection and calibration of an activity meter with cesium and barium sources in a nuclear medicine center; Proteccion radiologica y calibracion de un activimetro con fuentes de cesio y bario en un centro de medicina nuclear

    Energy Technology Data Exchange (ETDEWEB)

    Morales L, M.E. [IPEN INEN Centro de Medicina Nuclear, Av. Aviacion 3799, Lima 34 (Peru)

    2005-07-01

    Presently work is shown the results when gauging a team Deluxe Isotope (Caliper 11) with some sources of Cesium 137 and Barium 133, in a Center of Medicine Nuclear that operates from the anus 1983 in a modern building inside the one Institute of Illnesses Neoplasia (Inn). This Center was equipped initially with teams donated by the International Organism of Atomic Energy (Oa) with those that it develops assistance, educational works and of investigation, giving services to patient of the Inn and other public and private medical centers. (Author)

  4. Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

    OpenAIRE

    P. Sangeetha; K. Jeganathan; V. Ramakrishnan

    2013-01-01

    The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high) phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is foun...

  5. Kashi and Cosmos: Spatial manifestation and the five pilgrimage journeys of Banaras

    OpenAIRE

    Singh, Rana P.B., PhD, FJF, FAAI, FACLA; Rana, Pravin S

    2016-01-01

    Historically, Hindu rituals, sacred journeys, festivities, deities and their symmetrical links, have come together to form sacred spatial systems that are still observed by both pilgrims and devotees. These pilgrimage traditions are deeply rooted in local space / place, as well as in the cultural inheritance and mentality of their adherents. This structure is reflected symbolically in the spatial frame of Hinduism in which both complexity and temporal stability meet, mediating between people ...

  6. Swapnaushadhi: the embedded logic of dreams and medical innovation in Bengal.

    Science.gov (United States)

    Mukharji, Projit Bihari

    2014-09-01

    Numerous medicines in South Asia have their origins in dreams. Deities, saints and other supernatural beings frequently appear in dreams to instruct dreamers about specific remedies, therapeutic techniques, modes of care etc. These therapies challenge available models of historicising dreams. Once we overcome these challenges and unearth the embedded logic of these dreams, we begin to discern in them a dynamic institution that enabled and sustained therapeutic change within a 'traditional' medical milieu.

  7. Religiös-mythologische Vorstellungen bei den austronesischen Völkern Taiwans

    OpenAIRE

    Yamada, Hitoshi

    2003-01-01

    The present dissertation focuses on religious and mythological beliefs, customs and traditions of the Austronesian peoples in Taiwan. The peoples in question have been studied in such various fields as anthropology (including ethnology or ethnography), linguistics, archaeology and so on since the 17th century. Chapter 1 is a brief survey of its research history. Chapter 2 discusses religious notions and practices like supernatural beings, deities and spirits, soul, right and left, and shamani...

  8. Daniel 6: There and back again – A deity's tale | de Bruyn | HTS ...

    African Journals Online (AJOL)

    This article states that, with his narrative, the author of Daniel 6 creates the presence of Elohim outside Jerusalem and Israel, within non-Israelite environments. Applying a body-space frameset to the texts of Daniel 6 helps to read the text as a construction of concepts. With his narrative the author creates the presence of ...

  9. Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

    KAUST Repository

    Wang, Ping

    2015-12-22

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  10. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires; Phasenkohaerenter Transport und Spin-Bahn-Wechselwirkung in III/V-Halbleiternanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Estevez Hernandez, Sergio

    2009-10-16

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e{sup 2}/h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties

  11. Phase-coherent transport and spin-orbit-coupling in III/V-semiconductor nanowires

    International Nuclear Information System (INIS)

    Estevez Hernandez, Sergio

    2009-01-01

    Semiconductor nanowires fabricated by a bottom-up approach are not only interesting for the realization of future nanoscaled devices but also appear to be very attractive model systems to tackle fundamental questions concerning the transport in strongly confined systems. In order to avoid the problem connected with carrier depletion, narrowband gap semiconductors, i.e., InAs or InN, or core-shell Nanowires, i.e., GaAs/AlGaAs, are preferred. The underlying reason is that in InAs or InN the Fermi-level pinning in the conduction band results in a carrier accumulation at the surface. In fact, the tubular topology of the surface electron gas opens up the possibility to observe unconventional quantum transport phenomena. When the phase-coherence length in the nanowire is comparable to its dimensions the conductance fluctuates if a magnetic field is applied or if the electron concentration is changed by means of a gate electrode. These so-called universal conductance fluctuations being in the order of e 2 /h originate from the fact that in small disordered samples, electron interference effects are not averaged out. In this work are analyzed universal conductance fluctuations to study the quantum transport properties in InN, InAs and GaAs/AlGaAs nanowires. With the use of a magnetic field and a back-gate electrode the universal conductance fluctuations and localizations effects were analyzed. Since InN and InAs are narrow band gap semiconductors, one naturally expects spin-orbit coupling effects. Because this phenomena is of importance for spin electronic applications. However, owing to the cylindrical symmetry of the InN and InAs nanowires, the latter effect was observable and actually be used to determine the strength of spin-orbit coupling. In order to clearly separate the weak antilocalization effect from the conductance fluctuations, the averaging of the magnetoconductance at different gate voltages was essential. The low-temperature quantum transport properties of

  12. Daniel Dragonslayer – Bel and the dragon, Verses 23−27 (OG/Th

    Directory of Open Access Journals (Sweden)

    Joseph J. de Bruyn

    2015-04-01

    Full Text Available In this article, aspects of narrative critique, genre, editorial critique, the body and space are uniquely combined into a body-space framework. This spatial framework is used to examine the second episode of ‘Bel and the Dragon’, called ‘Daniel Dragonslayer’. It is postulated that the second episode of ‘Bel and the Dragon’ should be read in a reciprocal relationship with not only ‘Bel and the Dragon’, but also the larger Book of Daniel. Firstly, such an analysis indicates that the smaller episode is part of a larger clash of deities. Secondly, it shows that the editor /author utilises the episode to create a new cosmology. In this new cosmology, the Jewish deity is an almighty one, whilst other deities are seen as false and not real living gods. In his own way, the editor or author contributes to the way in which Jews regarded their God within the reality of the diaspora. Daniel Dragonslayer − Bel en die draak, Verse 23−27 (VAN/Die. In hierdie artikel word aspekte van narratiewe-kritiek, genre, redaksie-kritiek, die liggaam en ruimte op ’n unieke wyse gekombineer om ’n beliggaamde ruimteraamwerk te vorm. Hierdie beliggaamde ruimteraamwerk word gebruik om die tweede episode van ‘Bel en die Draak’, naamlik ‘Daniël, die Draakjagter’, te analiseer. Die artikel stel voor dat hierdie tweede episode van ‘Bel en die Draak’ in ’n resiproke verhouding met ‘Bel en die Draak’, sowel as met die boek Daniël gelees moet word. Indien die teks op hierdie voorgestelde wyse ontleed word, kom verskeie punte na vore. Eerstens word aangedui dat die kleiner episode deel van ’n groter gode-oorlog vorm. Tweedens, die skrywer/redakteur gebruik die kleiner episode as deel van ’n proses om ’n nuwe kosmologie te skep. Volgens hierdie nuwe kosmologie is die Joodse God ’n almagtige God, terwyl ander gode vals en nie ware lewende gode is nie. Op sy eie manier lewer die skrywer/redakteur ’n bydrae tot die

  13. Fabrication and structural studies of opal-III nitride nanocomposites

    Science.gov (United States)

    Davydov, V. Yu; Golubev, V. G.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Brogueira, P.; Schwarz, R.

    2000-12-01

    In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.

  14. Weak Interaction processes in core-collapse supernova

    International Nuclear Information System (INIS)

    Martinez-Pinedo, Gabriel

    2008-01-01

    In this manuscript we review the role that weak interaction processes play in supernova. This includes electron captures and inelastic neutrino-nucleus scattering (INNS). Electron captures during the collapse occur mainly in heavy nuclei, however the proton contribution is responsible for the convergence of different models to a 'norm' stellar trajectory. Neutrino-nucleus cross sections at supernova neutrino energies can be determined from precise data on the magnetic dipole strength. The results agree well with large-scale shell-model calculations. When incorporated in core-collapse simulations INNS increases the neutrino opacities noticeably and strongly reduces the high-energy part of the supernova spectrum

  15. Results of the benchmark for blade structural models, part A

    DEFF Research Database (Denmark)

    Lekou, D.J.; Chortis, D.; Belen Fariñas, A.

    2013-01-01

    A benchmark on structural design methods for blades was performed within the InnWind.Eu project under WP2 “Lightweight Rotor” Task 2.2 “Lightweight structural design”. The present document is describes the results of the comparison simulation runs that were performed by the partners involved within...... Task 2.2 of the InnWind.Eu project. The benchmark is based on the reference wind turbine and the reference blade provided by DTU [1]. "Structural Concept developers/modelers" of WP2 were provided with the necessary input for a comparison numerical simulation run, upon definition of the reference blade...

  16. orignal paper: Beyond natural selection and divine intervention: The Lamarckian implication of Adam Smith's invisible hand

    OpenAIRE

    Elias L. Khalil

    2000-01-01

    Adam Smith's invisible hand metaphor (IH) is examined in light of two different accounts of the origin of traits: Charles Darwin's theory of evolutionary optimization and William Paley's theory of divine intervention. Smith's stand supersedes both accounts. For Smith, intermediating drives, such as the sexual one, neither arise accidentally and favored according to their fitness , la Darwin nor planted by the Deity , la Paley. For Smith, such drives are adopted in light of their ultimate end....

  17. The Invisible Hand of God in Adam Smith

    OpenAIRE

    Denis, A.

    2005-01-01

    Adam Smith is revered as the father of modern economics. Analysis of his writings, however, reveals a profoundly medieval outlook. Smith is preoccupied with the need to preserve order in society. His scientific methodology emphasises reconciliation with the world we live in rather than investigation of it. He invokes a version of natural law in which the universe is a harmonious machine administered by a providential deity. Nobody is uncared for and, in real happiness, we are all substantiall...

  18. Yhwh, the Goddess and Evil: Is 'monotheism' an adequate concept to describe the Hebrew Bible's discourses about the God of Israel?

    OpenAIRE

    Römer, Thomas C.

    2013-01-01

    The concept of �monotheism� has become a matter of debate in Hebrew Bible scholarship. This article investigates whether the concept should still be used, starting with Second Isaiah, who in the early Persian period elaborated a discourse that presented Yhwh as the only god. Therefore he had to integrate into this deity functions traditionally attributed to goddesses and to demons or evil gods. However, this attempt did not succeed. The goddess, whose elimination is probably reflected in Zech...

  19. Two Galatian Cults in Dacia

    OpenAIRE

    Mitchell, Stephen

    2017-01-01

    Two Galatian Cults in DaciaAn unpublished inscription from Ancyra or itsterritory contains a dedication to Zeus Erusenos.  This deity is also attested on two Latininscriptions found in Roman Dacia (Roumania), and the cult, like several otherlocal cults from Galatia or eastern Bithynia, was exported from Asia Minor tothe new province of Dacia after it was conquered and annexed by the emperorTrajan. A Greek dedication to Zeus Sittakomikos recorded in Dacia shouldbe emended to Zeus Heptakomikos,...

  20. AHP 40: SOCIALIZING WITH GODS IN THE MONGGHUL BOG RITUAL

    OpenAIRE

    Limusishiden (Li Dechun); Gerald Roche

    2016-01-01

    This article introduces a communal ritual, known as Bog, as practiced among the Mongghul, a linguistically and culturally distinct group of people of the northeast Tibetan Plateau. The main activity of the Bog ritual involves deities and ancestral souls being invited to a sumptuous "banquet" where religious practitioners, called fashi, chant scriptures, sing, dance, joke, and burn incense to delight the "guests." This essay provides a thick description of the ritual. To provide context for th...

  1. The great war correspondent: Francis McCullagh, 1874–1956

    OpenAIRE

    Horgan, John

    2009-01-01

    Trotsky of Russia knows Francis McCullagh. So does President Calles of Mexico. Peter, the King of Serbia, was McCullagh’s friend. The headhunters of the upper Amazon list Francis McCullagh as one of their principal deities. The warring tribes of Morocco call him blood brother. A room is always ready for him in the imperial palace of Siam. The latchstrings of hundreds of Siberian peasant huts are out in anticipation of his coming.

  2. Dicty_cDB: VSB521 [Dicty_cDB

    Lifescience Database Archive (English)

    Full Text Available efqslkmklml*iyy*mksqkvlkscalavvplmksvs rkfisvmilhsstfikrf*lyqlinklmlvkml*phntfyhl*lqspklemfmlptlqvp elavslll...ESVRARWAYKVPGSMIQNLLGM KHGAPNKHHIILIKKLLGY*inn*kk Frame B: ---hqamkp*wklsri*kprtt

  3. The Characteristics and Social Function of the Tujia People’s Tima Sacred Songs

    Institute of Scientific and Technical Information of China (English)

    Chen Qian

    2016-01-01

    word of the Tujia language: ‘Ti ’ means ‘to worship dei-ties’ and ‘Ma ’ means ‘people ’ . Thus basically‘Tima’ means ‘the people who worship deities’ and indeed tima shenge were especially sung dur-ing the performance of worship rituals. Looking at all expression of Tujia musical culture, only Tima songs are connected to elements of religion such as deities, scriptures, worship etc. In addition, the knowledge of Tima songs usually was transmitted from father to son, from generation to generation. The melody of Tima sacred songs was origina-ted from the melody of ox horn played by ancient Tujia tribes. Tima sacred songs were part of a com-prehensive musical form, which combined enter-tainment, worship of deities, communication with deities, lengthy instrumental pieces, poetry, and dance. It usually was aimed at certain practical re-sults such as e. g. exorcisms of demons, worship of‘heaven and earth’ , worship of ancestors, invita-tion of certain ‘gods ’ , realization of certain wi-shes, prevention and/or removal of disasters and other evils, blessing of animals, giving thanks for good weather for crops etc. In addition, there are two types of Tima performances: ( i) a large-scale collective type of worship called tiao baishou ( dancing and waving of hands ) and ( ii ) a more intimate or family type of worship called wan pusa ( praying for blessings from Bodhisattva) . Of these two, the family-scale Tima ritual-wan pusa-of-fers the easiest introduction to Tima and the Tujia people’ s religious beliefs. While Tima sacred songs support the personal religious convictions of members of the Tujia peo-ple, they also promoted the common ideology of the Tujia. In addition, as Tima-shamans ( or sor-cerers) also practiced medicine there were many Tima-shamans whose medical skills reached quite high levels. Such Tima-sorcerers were indeed re-garded as very capable people that had access to, and influence in, the world of gods and demons. These

  4. The Sumerian Goddess Inanna (3400-2200 BC

    Directory of Open Access Journals (Sweden)

    Paul Collins

    1994-11-01

    Full Text Available Of the myriad Sumerian deities that have emerged from the cuneiform records of ancient Mesopotamia perhaps the most famous - but least understood - is the goddess Inanna, the' lady of heaven'. As a patron of sexuality and aggression she appears in many ancient myths and legends and continues to exert a fascination over contemporary minds. Southern Mesopotamia, called Sumer, witnessed the development of the world's oldest writing system during the Late Uruk period. However, there are few references to Inanna in the extant cuneiform records before the Dynasty of Akkad. Any reconstruction of the cult of Inanna at the dawn of history must, therefore, rely initially on textual evidence of much later periods: the vast repertoire of myths, hymns and prayers to the goddess have been attributed to the 3rd Dynasty of Ur III and the Isin-Larsa Dynasties. Certain details in these stories may reflect beliefs and practices from earlier periods but, these elements are difficult to identify. However, the archaeological record of the late fourth and third millennia has revealed evidence for numerous temples dedicated to Inanna, testifyingto an important and widespread cult. This paper first discusses the archaeological record, before going on to attempt to define the role of Inanna and investigate a proposed syncretism of the goddess wi th the Semitic deity Ishtar.

  5. Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

    Directory of Open Access Journals (Sweden)

    Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi and Masatomo Sumiya

    2013-01-01

    Full Text Available Core-level and valence band spectra of InxGa1−xN films were measured using hard x-ray photoemission spectroscopy (HX-PES. Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (~20 nm, the spectra contain both surface and bulk information due to the surface band bending. The InxGa1−xN films (x = 0–0.21 exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.

  6. Exponential operations and aggregation operators of interval neutrosophic sets and their decision making methods.

    Science.gov (United States)

    Ye, Jun

    2016-01-01

    An interval neutrosophic set (INS) is a subclass of a neutrosophic set and a generalization of an interval-valued intuitionistic fuzzy set, and then the characteristics of INS are independently described by the interval numbers of its truth-membership, indeterminacy-membership, and falsity-membership degrees. However, the exponential parameters (weights) of all the existing exponential operational laws of INSs and the corresponding exponential aggregation operators are crisp values in interval neutrosophic decision making problems. As a supplement, this paper firstly introduces new exponential operational laws of INSs, where the bases are crisp values or interval numbers and the exponents are interval neutrosophic numbers (INNs), which are basic elements in INSs. Then, we propose an interval neutrosophic weighted exponential aggregation (INWEA) operator and a dual interval neutrosophic weighted exponential aggregation (DINWEA) operator based on these exponential operational laws and introduce comparative methods based on cosine measure functions for INNs and dual INNs. Further, we develop decision-making methods based on the INWEA and DINWEA operators. Finally, a practical example on the selecting problem of global suppliers is provided to illustrate the applicability and rationality of the proposed methods.

  7. Photoluminescence and pressure effects in short period InN/nGaN superlattices

    DEFF Research Database (Denmark)

    Staszczak, G.; Gorczyca, I.; Suski, T.

    2013-01-01

    Measurements of photoluminescence and its dependence on hydrostatic pressure are performed on a set of InN/nGaN superlattices with one InN monolayer and with different numbers of GaN monolayers. The emission energies, EPL, measured at ambient pressure, are close to the value of the band gap, Eg......, in bulk GaN, in agreement with other experimental findings. The pressure dependence of the emission energies, dEPL/dp, however, resembles that of the InN energy gap. Further, the magnitudes of both EPL and dEPL/dp are significantly higher than those obtained from ab-initio calculations for 1In...

  8. Ungdom og fortelling - en narrativ analyse av Gen 37 med et særlig henblikk på forkynnelse av gammeltestamentlige fortellinger til ungdom

    OpenAIRE

    Sæbø, Linn

    2011-01-01

    Det er mange som har skrevet om hvordan en kan forkynne det gamle testamentet, og det er mange som har skrevet om hvordan forkynne for ungdom, men få har satt disse to fagområdene sammen. I denne oppgaven vil jeg prøve å gjøre akkurat det. Jeg vil først gå inn på emnet; ungdom og fortellinger. Der vil jeg se på Plan for trosopplæring og RLE-planen med henblikk på hvor mye av ”pensum” som er fortellingsstoff. Jeg vil også komme inn på temaet; hvem er ungdom, og ungdom og identitet....

  9. Dgroup: DG01579 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 3047 ... Bacitracin methylene disalicylate (USP) ... D03048 ... Bacitracin zinc (USP) D02927 ... Amphomycin (USAN) D10380 ... Surotomycin (USAN/INN) Antibacterial ... Antibiotics ...

  10. Dgroup: DG01685 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01685 DGroup Insulin sensitizer ... DG01684 ... Biguanide antidiabetic ... DG00112 ... Phen...litazar (USAN/INN) ... D09350 ... Indeglitazar (USAN) Antidiabetic agent ... Antidiabetics ...

  11. Dicty_cDB: VHN654 [Dicty_cDB

    Lifescience Database Archive (English)

    Full Text Available *snisgi*kafkricniy irsc*h**tkwssnskrn*kcsyilflhkws*siriqwcq*snskkysrskqiifc*inn ctknatn*INKKKKIIXKLFYLIYXLKKK--- ---QINNLY*kmsx...**kklevflhsift*melkyqnsvvpmkql*evl*kqtnnflln**l ykkcnklnk*kkknnsqiilfnlxfkkk--- ---QINNLY*kmsxvihisfnexldkxl

  12. Effects of nitrogen incorporation in HfO(2) grown on InP by atomic layer deposition: an evolution in structural, chemical, and electrical characteristics.

    Science.gov (United States)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Kang, Hang-Kyu; Jeong, Kwang-Sik; Cho, Mann-Ho; Ko, Dae-Hong; Kim, Hyoungsub; Seo, Jung-Hye; Kim, Dong-Chan

    2014-03-26

    We investigated the effects of postnitridation on the structural characteristics and interfacial reactions of HfO2 thin films grown on InP by atomic layer deposition (ALD) as a function of film thickness. By postdeposition annealing under NH3 vapor (PDN) at 600 °C, an InN layer formed at the HfO2/InP interface, and ionized NHx was incorporated in the HfO2 film. We demonstrate that structural changes resulting from nitridation of HfO2/InP depend on the film thickness (i.e., a single-crystal interfacial layer of h-InN formed at thin (2 nm) HfO2/InP interfaces, whereas an amorphous InN layer formed at thick (>6 nm) HfO2/InP interfaces). Consequently, the tetragonal structure of HfO2 transformed into a mixture structure of tetragonal and monoclinic because the interfacial InN layer relieved interfacial strain between HfO2 and InP. During postdeposition annealing (PDA) in HfO2/InP at 600 °C, large numbers of oxidation states were generated as a result of interfacial reactions between interdiffused oxygen impurities and out-diffused InP substrate elements. However, in the case of the PDN of HfO2/InP structures at 600 °C, nitrogen incorporation in the HfO2 film effectively blocked the out-diffusion of atomic In and P, thus suppressing the formation of oxidation states. Accordingly, the number of interfacial defect states (Dit) within the band gap of InP was significantly reduced, which was also supported by DFT calculations. Interfacial InN in HfO2/InP increased the electron-barrier height to ∼0.6 eV, which led to low-leakage-current density in the gate voltage region over 2 V.

  13. What has Athens to do with Mormonism?

    OpenAIRE

    Harman, Benjamin Wade

    2012-01-01

    In his lecture, Terryl Givens presents one with a new way to approach the prophecy of Enoch that was received by Joseph Smith. Contained in this short narrative is a new, innovative conception about God that differs greatly from traditional Christianity. This notion is that of a passible deity, a God that is susceptible to feeling and emotion. It is a God who weeps, a God who is vulnerable and suffers emotional pain. God, as defined by the Christian creeds, is one who lacks passions.1 Givens,...

  14. Ezekiel and the politics of Yahweh : a study in the kingship of God

    OpenAIRE

    Bechtel, Christopher Ronald

    2012-01-01

    The book of Ezekiel, like much of the Hebrew Bible, depicts Yahweh as a king. However, Ezekiel’s presentation of Yahweh’s kingship has been largely ignored by modern scholarship, and, when it has been addressed, has been categorized as a grand metaphor for Yahweh’s divine superiority. In contrast, this study argues that Yahweh’s kingship is a genuine political force, not merely a cipher for the exalted status of Israel’s deity. To answer the objection that ‘Yahweh is king’ i...

  15. The importance of the sea in Lima religion: an interdisciplinary proposal

    OpenAIRE

    Vargas Nalvarte, Pedro

    2017-01-01

    This article proposes the existence of a cult dedicated to a female sea deity on the Central Coast of Peru during the Early Intermediate Period (200-700 AD). This research is based on archaeological evidence of ritual activity as well as ethnohistoric, ethnographic, and linguistic data that supports the proposal. A goddess of the sea, with a court of marine life, linked to the feminine aspects of the cosmos could have had Huaca Pucllana as one of its centers of worship, with the abundance of ...

  16. Dgroup: DG02570 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02570 Chemical ... DGroup Tebipenem ... D09598 ... Tebipenem pivoxil (JAN/INN) ... Anti...bacterial, Cell wall biosynthesis inhibitor beta-Lactam, Carbapenem penicillin binding protein ...

  17. Drug: D06120 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D06120 Drug Thyrotropin alfa (USAN/INN); Thyrotropin alfa (genetical recombination...) (JAN); Thyrotropin human alfa (genetical recombination); Thyrogen (TN) ... Therapeutic category: 7990 A

  18. Drug: D02994 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D02994 Drug Rituximab (USAN/INN); Rituximab (genetical recombination) (JAN); Ritux...imab (genetical recombination) [Rituximab biosimilar 1] (JAN); Rituxan (TN) ... Therapeutic category: 429

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    Lifescience Database Archive (English)

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  20. Dgroup: DG02612 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02612 Chemical ... DGroup Rituximab ... D02994 ... Rituximab (USAN/INN); Rituximab (gene...tical recombination) (JAN); Rituximab (genetical recombination) [Rituximab biosimilar 1] (JAN) ... ATC code:

  1. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Electronics Department, University of Alcala, Alcala de Henares (Spain); Rigutti, Lorenzo; Julien, Francois H. [Institut d' Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, Orsay (France); Lacroix, Bertrand; Ruterana, Pierre [Centre de Recherche sur les Ions les Materiaux et la Photonique (CIMAP), UMR 6252, CNRS, ENSICAEN, CEA, UCBN, Caen (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, CIEMAT, Madrid (Spain); Monroy, Eva [CEA Grenoble, INAC/SP2M, Grenoble (France)

    2012-01-15

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In{sub 0.9}Ga{sub 0.1}N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-{mu}m-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at {proportional_to}0.73 eV with a full width at half maximum of {proportional_to}86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperaure, explained in terms of carrier localization. A carrier localization energy of {proportional_to}12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of {proportional_to}16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

    International Nuclear Information System (INIS)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel; Rigutti, Lorenzo; Julien, Francois H.; Lacroix, Bertrand; Ruterana, Pierre; Fernandez, Susana; Monroy, Eva

    2012-01-01

    We report on the thermal evolution of the photoluminescence (PL) from high In-content InN/In 0.9 Ga 0.1 N multiple-quantum wells (MQWs) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire templates. The structural quality and the well/barrier thickness uniformity in the MQW structure are assessed by X-ray diffraction and transmission electron microscopy measurements. PL results are compared with the luminescence from a 1-μm-thick InN reference sample. In both cases, the dominant low-temperature (5 K) PL emission peaks at ∝0.73 eV with a full width at half maximum of ∝86 meV. The InN layer displays an S-shape evolution of the emission peak energy with temperature, explained in terms of carrier localization. A carrier localization energy of ∝12 meV is estimated for the InN layer, in good agreement with the expected carrier concentration. In the case of the MQW structure, an enhancement of the carrier localization associated to the piezoelectric field results in an improved thermal stability of the PL intensity, reaching an internal quantum efficiency of ∝16%. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

    Science.gov (United States)

    Sangeetha, P.; Jeganathan, K.; Ramakrishnan, V.

    2013-06-01

    The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high) and A1 (LO) phonon mode of InN core at 490 and 590 cm-1 respectively and E2 (high) phonon mode of GaN shell at 573 cm-1. The free carrier concentration of InN core is found to be low in the order ˜ 1016 cm-3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ˜15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ˜0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high) phonon mode of GaN shell at 573 cm-1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

  4. Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111 substrate

    Directory of Open Access Journals (Sweden)

    P. Sangeetha

    2013-06-01

    Full Text Available The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE on Si (111 substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E2 (high and A1 (LO phonon mode of InN core at 490 and 590 cm−1 respectively and E2 (high phonon mode of GaN shell at 573 cm−1. The free carrier concentration of InN core is found to be low in the order ∼ 1016 cm−3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E2 (high phonon mode of GaN shell at 573 cm−1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

  5. Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

    International Nuclear Information System (INIS)

    Sangeetha, P.; Ramakrishnan, V.; Jeganathan, K.

    2013-01-01

    The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E 2 (high) and A 1 (LO) phonon mode of InN core at 490 and 590 cm −1 respectively and E 2 (high) phonon mode of GaN shell at 573 cm −1 . The free carrier concentration of InN core is found to be low in the order ∼ 10 16 cm −3 due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of ∼15 nm. The phonon-life time of core-shell nanowire structure is estimated to be ∼0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E 2 (high) phonon mode of GaN shell at 573 cm −1 as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

  6. Doped indium nitride thin film by sol-gel spin coating method

    Science.gov (United States)

    Lee, Hui San; Ng, Sha Shiong; Yam, Fong Kwong

    2017-12-01

    In this study, magnesium doped indium nitride (InN:Mg) thin films grown on silicon (100) substrate were prepared via sol-gel spin coating method followed by nitridation process. A custom-made tube furnace was used to perform the nitridation process. Through this method, the low dissociation temperature issue of InN:Mg thin films can be solved. The deposited InN:Mg thin films were investigated using various techniques. The X-rays diffraction results revealed that two intense diffraction peaks correspond to wurtzite structure InN (100), and InN (101) were observed at 29° and 33.1° respectively. Field emission scanning electron microscopy images showed that the surface of the films exhibits densely packed grains. The elemental composition of the deposited thin films was analyzed using energy dispersive X-rays spectroscopy. The detected atomic percentages for In, N, and Mg were 43.22 %, 3.28 %, and 0.61 % respectively. The Raman spectra showed two Raman- and infrared-active modes of E2 (High) and A1 (LO) of the wurtzite InN. The band gap obtained from the Tauc plot showed around 1.74 eV. Lastly, the average surface roughness measured by AFM was around 0.133 µm.

  7. Comparison of gamma knife validation film's analysis results of different film dose analysis software

    International Nuclear Information System (INIS)

    Cheng Xiaojun; Zhang Conghua; Liu Han; Dai Fuyou; Hu Chuanpeng; Liu Cheng; Yao Zhongfu

    2011-01-01

    Objective: To compare the analytical result of different kinds of film dose analysis software for the same gamma knife, analyze the reasons of difference caused, and explore the measurements and means for quality control and quality assurance during testing gamma knife and analyzing its result. Methods: To test the Moon Deity gamma knife with Kodak EDR2 film and γ-Star gamma knife with GAFCHROMIC® EBT film, respectively. All the validation films are scanned to proper imagine format for dose analysis software by EPSON PERFECTION V750 PRO scanner. Then imagines of Moon Deity gamma knife are analyzed with Robot Knife Adjuvant 1.09 and Fas-09 1.0, and imagines of γ-Star gamma knife with Fas-09 and MATLAB 7.0. Results: There is no significant difference in the maximum deviation of radiation field size (Full Width at Half Maximum, FWHM) and its nominal value between Robot Knife Adjuvant and Fas-09 for Moon Deity gamma knife (t=-2.133, P>0.05). The analysis on the radiation field's penumbra region width of collimators which have different sizes indicated that the differences are significant (t=-8.154, P<0.05). There is no significant difference in the maximum deviation of FWHM and its nominal value between Fas-09 and MATLAB for γ-Star gamma knife (t=-1.384, P>0.05). However, following national standards,analysis of φ4 mm width of collimators can obtain different results according to the two kinds software, and the result of Fas-09 is not qualified while MATLAB is qualified. The analysis on the radiation field's penumbra region width of collimators which have different sizes indicates that the differences are significant (t=3.074, P<0.05). The imagines are processed with Fas-09. The analysis of imagine in the pre-and the post-processing indicates that there is no significant difference in the maximum deviation of FWHM and its nominal value (t=0.647, P>0.05), and the analytical result of the radiation field's penumbra region width indicates that there is

  8. William Paley's lost "intelligent design".

    Science.gov (United States)

    Shapiro, Adam R

    2009-01-01

    William Paley's Natural Theology has experienced a resurgence in popularity in recent decades with the continuing controversies over the teaching of evolution and the emergence of a new "intelligent design" movement. But while both the movement's supporters and detractors agree that Paley is an intellectual forefather of the present-day movement, this agreement is forged at the expense of historical accuracy. Paley's intelligent design has almost nothing in common with the present day movement and, in fact, suggests theological arguments against the type of reasoning used by the modern movement. Paley wrote in reaction to Hume and in response to the evolutionary theories of Buffon and Erasmus Darwin. In this light, the Natural Theology suggests a different reading than it is usually given. Paley's narrowly-argued theology relies upon the ability to detect the presence of "purpose" in nature without relying upon knowing what those purposes are. His empirically-argued theology leads him to a God who operates through natural law, not in its contravention, and his concern goes far beyond proving the existence of a deity to undertaking the theological project of determining the attributes and characteristics of the deity. Though not himself an evolutionist, Paley put forth a theological worldview consistent with evolution. In fact, given his arguments that the observation of great contrivance increases the testimony of nature to God's power, Paley's philosophy might be more consistent with a theistic Darwinian evolution than with special creation.

  9. Markerless Augmented Reality Utilizing Gyroscope to Demonstrate the Position of Dewata Nawa Sanga

    Directory of Open Access Journals (Sweden)

    I Wayan Andis Indrawan

    2018-01-01

    Full Text Available Dewata Nawa Sanga in Hinduism has an important role as the foundation of the religious concept implemented by Hindus in Bali, Indonesia. It has the meaning of nine deities or manifestations of Ida Sang Hyang Widhi Wasa (God Almighty  that guard or control the nine wind direction. Dewata Nawa Sanga in terms of education in Bali has been learned by the elementary school students. However, in social life the concept of Dewata Nawa Sanga itself has not been attached and understood by all Balinese Hinduism yet. Based on the problem in social life, there is an idea to develop Markerless Augmented Reality Utilizing Gyroscope to Demonstrate the Position of Dewata Nawa Sanga. This application is designed to know, recognize, and understand the characteristics of Dewata Nawa Sanga using gyroscope. This sensor serves to fulfill the object of the deities in the coordinates to be determined. Furthermore, it serves to provide information about Dewata Nawa Sanga along with the innovative and informative 3D animation. The result of usefulness questionnaire of this application percentage value average is 88.4%. It can be concluded that AR Dewata Nawa Sanga is very useful and helpful for learners in exploring the Dewata Nawa Sanga position in a real-world environment. The result of usability and satisfaction questionnaire of this application percentage value average is 84.8%. It shows that the application is very useful for the participants to learn Dewata Nawa Sanga and very satisfied to use.

  10. Dgroup: DG02007 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02007 DGroup Antianxiety, carbamate derivatives ... D00376 ... Meprobamate (JAN/USP/I...NN) ... D07317 ... Emylcamate (INN) D01807 ... Mebutamate (JAN/USAN) Neuropsychiatric agent ... Antianxiety ...

  11. Did Christianity lead to schizophrenia? Psychosis, psychology and self reference.

    Science.gov (United States)

    Littlewood, Roland; Dein, Simon

    2013-06-01

    Both geographically and historically, schizophrenia may have emerged from a psychosis that was more florid, affective, labile, shorter lived and with a better prognosis. It is conjectured that this has occurred with a reflexive self-consciousness in Western and globalising societies, a development whose roots lie in Christianity. Every theology also presents a psychology. Six novel aspects of Christianity may be significant for the emergence of schizophrenia-an omniscient deity, a decontexualised self, ambiguous agency, a downplaying of immediate sensory data, and a scrutiny of the self and its reconstitution in conversion.

  12. Francis Bacon's Valerius Terminus and the Voyage to the "Great Instauration".

    Science.gov (United States)

    Serjeantson, Richard

    2017-01-01

    Francis Bacon's earliest surviving natural philosophical treatise (composed circa 1603) bears the title Valerius Terminus of the Interpretation of Nature. This study, resting on fresh attention to the surviving authorial manuscript, has three goals. It begins by identifying a lost precursor work apparently entitled "Of Active Knowledge." It then examines the significance of the pseudonyms Bacon chose to introduce his ideas, considering especially his invocation of Erasmus's emblem, the Roman deity Terminus. Finally, it shows how the Valerius Terminus's global vision of contemporary knowledge ultimately helped shape the iconography of Bacon's published Instauratio magna.

  13. Biblical Ethics and Plotinus

    DEFF Research Database (Denmark)

    Pontoppidan, Maria

    2013-01-01

    This article focuses on the question of unification versus relationality in ethics. It compares two different ethical approaches from Late Antiquity, highlighting the contrast between Plotinian (Neoplatonic) ethics as striving for perfect unification of the human soul with the divinity...... - and Biblical ethics as a relational ethics, where alterity remains operative in the encounter with the deity, and where the primary ethical demand is to relate properly to fellow creatures and God as other. The latter demand is exemplified by the figure of Job, whose righteousness is interpreted as his...

  14. The Iconography and Symbolism of Sun God in Urartian Art

    Science.gov (United States)

    Poghosyan, Gayane

    2016-12-01

    The predominating symbol of the winged sun disc in Urartian religious iconography testifies the significant role and importance of the sun in worship. The stylistic variation and peculiar iconographic features of the winged discs, sacred animals and divine images associated with solar deity shows the relationship between the cult of the sun god, sequence of the different phases of the year and constellations in Urartian culture. Such kind of iconography is possibly formed and stylized in result of interaction of ancient human imaginations, influence of rock paintings and religious beliefs.

  15. The mythology of the divine in P. Beroaldo's Commentaries on Book 11 of Apuleius' Metamorphoses

    Directory of Open Access Journals (Sweden)

    Sonja Weiss

    2011-12-01

    Full Text Available The article investigates Beroaldo's approach to the theological themes of Book 11 of Apuleius' Metamorphoses focusing on his interpretation of the figure of Isis, represented by Apuleius as the Moon goddess of many names. A symbol of Nature, Fortune and Fate, at the same time changeable and motionless, Isis is no less than the transcendent deity ruling the universe. In Beroaldo's commentaries, Antiquity not only coexists with Christianity but actually stimulates it, and their symbiosis is an edifying model proposed by Beroaldo to the audience of his readers and students.

  16. Dgroup: DG01771 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01771 Chemical ... DGroup Docusate ... D00305 ... Docusate sodium (USP); Sodium dioctyl ...sulfosuccinate (INN); Dioctyl sodium sulfosuccinate (JAN) ... D03885 ... Docusate calcium (USP) D03886 ... Docusate

  17. Dgroup: DG01987 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01987 Chemical ... DGroup Eglumegad Eglumetad ... D08908 ... Eglumegad (INN) D03966 ... Eglumetad (USAN) ... Antianxie...ty, Smoking cessation ajunct GRM2 [HSA:2912] [KO:K04605] ...

  18. Dgroup: DG02590 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02590 Chemical ... DGroup Laropiprant ... D08940 ... Laropiprant (INN/USAN) ... Anti-atherosclerotic, Antidyslipide...mia, Prostaglandin D2 receptor antagonist Target: PTGDR [HSA:5729] [KO:K04332] ...

  19. Dgroup: DG02662 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02662 Chemical ... DGroup Apolizumab ... D02967 ... Apolizumab (USAN/INN) ... Antineoplastic, Anti-HLA-DR antibody... Monoclonal antibody HLA-DRB [HSA:3123 3125 3126 3127] [KO:K06752] ...

  20. Dgroup: DG02658 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02658 Chemical ... DGroup Cysteamine Mercaptamine ... D03634 ... Cysteamine (USAN); Merc...aptamine (INN) D03635 ... Cysteamine hydrochloride (USAN) ... D10468 ... Cysteamine bitartrate (JAN) ... Cystine concentration-lowering agent ...

  1. Dgroup: DG02008 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02008 DGroup Gastric mucosal protectant ... DG00025 ... Sucralfate ... C07314 ... Sucralfate ... D00446 ... Sucralfate... (USP/INN); Sucralfate hydrate (JP17) ... D00177 ... Methylmethionine sulfonium chloride (J

  2. Dgroup: DG00901 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available hloride (JP17) ... Neuropsychiatric agent ... DG01941 ... Benzamide antipsychotic ... DG01478 ... Dopamine antagonist ... D... DG00901 Chemical ... DGroup Tiapride ... D08590 ... Tiapride (INN) D01522 ... Tiapride hydroc

  3. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Soto Rodriguez, Paul E. D., E-mail: p.soto@isom.upm.es; Aseev, Pavel; Gómez, Victor J.; Kumar, Praveen; Ul Hassan Alvi, Naveed; Calleja, Enrique [Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Mánuel, José M.; Jiménez, Juan J.; García, Rafael [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); Morales, Francisco M. [Dep. Ciencia de los Materiales e IM y QI., F. Ciencias, Universidad de Cádiz, 11510-Puerto Real, Cádiz (Spain); IMEYMAT: Institute of Research on Electron Microscopy and Materials of the University of Cádiz, Cádiz (Spain); Senichev, Alexander [Max Planck Institute of Microstructure Physics, Weinberg 2, Halle 06120 (Germany); Lienau, Christoph [Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26129 Oldenburg (Germany); Nötzel, Richard, E-mail: noetzel500@gmail.com [L-NESS and Dipartimento di Scienza dei Materiali, Universitá di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy)

    2015-01-12

    The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In{sub 0.73}Ga{sub 0.27}N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 10{sup 9} cm{sup −2}. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

  4. High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

    International Nuclear Information System (INIS)

    Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

    2006-01-01

    Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

  5. Conduction band offset at the InN/GaN heterojunction

    International Nuclear Information System (INIS)

    Wang Kejia; Lian Chuanxin; Su Ning; Jena, Debdeep; Timler, John

    2007-01-01

    The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ∼0.94 eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95 eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be ΔE C =1.68±0.1 eV

  6. Dgroup: DG02651 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available ody Monoclonal antibody IL2RA (CD25) [HSA:3559] [KO:K05068] ... ... DG02651 Chemical ... DGroup Daclizumab ... D03639 ... Daclizumab (USAN/INN) ... Immunosuppressant, Anti-CD25 antib

  7. Dgroup: DG00637 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00637 Chemical ... DGroup Micafungin ... D08218 ... Micafungin (INN) D02465 ... Micafungin ...sodium (JAN/USAN) ... D11010 ... Micafungin sodium hydrate (JAN) ... ATC code: J02AX05 Antibiotics ...

  8. Dgroup: DG01735 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available glinide (JP17/USAN/INN) ... D01854 ... Mitiglinide calcium hydrate (JP17) ... Antidiabetic agent Unclassified ... DG02044 ... Hypoglycemics ... Antidiabetics ABCC8 (SUR1) [HSA:6833] [KO:K05032] ...

  9. 76 FR 24463 - Caribbean Fishery Management Council; Public Meeting

    Science.gov (United States)

    2011-05-02

    ... Inn Hotel, 6530 Isla Verde Avenue, Carolina, Puerto Rico 00979. FOR FURTHER INFORMATION CONTACT... (OFL) vs. Acceptable Biological Catch (ABC) and legal implications of each. b. Role of SSC and how...

  10. Sociální a společenské aspekty hostinského prostoru

    Czech Academy of Sciences Publication Activity Database

    Altman, Karel

    2013-01-01

    Roč. 47, č. 2 (2013), s. 139-152 ISSN 0862-1209 Institutional support: RVO:68378076 Keywords : public houses and inns * regular guests * social relations Subject RIV: AC - Archeology, Anthropology, Ethnology

  11. Yeast Interacting Proteins Database: YNL152W, YMR032W [Yeast Interacting Proteins Database

    Lifescience Database Archive (English)

    Full Text Available YNL152W INN1 Essential protein that associates with the contractile actomyosin ring... Bait description Essential protein that associates with the contractile actomyosin ring, required for ingre

  12. Dicty_cDB: VSI646 [Dicty_cDB

    Lifescience Database Archive (English)

    Full Text Available vwsm*snisgi*kafkricniy irsc*h**tkwssnskrn*kcsyilflqkws*siriqwcq*snskkysrskqiifc*inn ctknatn*inkkkkiixkxfxli*kk--- ---HGSDQINNLY*kmsx...lhgvvhveqylrylksfqtnl*hl hsfmltlin*vviq**kklevflhsiftemelkyqnsvvpmkql*evl*kqtnnflln** lykkcnklnk*KKKNNSQIXXF...NLKKK--- ---HGSDQINNLY*kmsxvihisxnexlxxhlqaexlvidfsaawcgpcxxxxpxfekls nefxtftfvhvdidklsghpivkxixsvptfyfyxnga

  13. Dgroup: DG02469 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02469 Chemical ... DGroup Naftopidil ... D01674 ... Naftopidil (JP17/INN); Naftopidil tablet...s (JP17); Naftopidil orally disintegrating tablets (JP17) ... Antidysuria, alpha1-Adrenergic receptor a

  14. Dgroup: DG00872 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00872 Chemical ... DGroup Cyamemazine ... D07307 ... Cyamemazine (INN) D07756 ... Cyamemazine tartrate Neuropsychiat...ric agent ... DG01905 ... Phenothiazine antipsychotics ATC code: N05AA06 Phenothiazine antipsychotics ...

  15. Dgroup: DG00887 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00887 Chemical ... DGroup Melperone ... D07309 ... Melperone (INN) D08172 ... Melperone hydrochloride Neuropsychiatr...ic agent ... DG01940 ... Butyrophenone derivative ATC code: N05AD03 Butyrophenone antipsychotics ...

  16. Dgroup: DG01339 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available il citrate (USAN) Neuropsychiatric agent ... DG01564 ... Opioid receptor agonist ... DG01563 ... mu-Opioid receptor ago... DG01339 Chemical ... DGroup Carfentanil ... D07620 ... Carfentanil (INN) D03405 ... Carfentan

  17. Dgroup: DG00979 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00979 Chemical ... DGroup Pirisudanol ... D07347 ... Pirisudanol (INN) D08390 ... Pirisudanol dimaleate Neuropsychia...tric agent ... DG01972 ... Nootropic ATC code: N06BX08 Nervous system stimulant ...

  18. Dgroup: DG00823 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00823 Chemical ... DGroup Tilidine ... D08597 ... Tilidine (INN) D06147 ... Tilidine hydrochloride (USAN) Neuropsych...iatric agent ... DG01564 ... Opioid receptor agonist ... DG01563 ... mu-Opioid receptor agonis

  19. Dgroup: DG00760 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00760 Chemical ... DGroup Glucosamine ... D04334 ... Glucosamine (USAN/INN) D08022 ... Glucosa...mine hydrochloride D08023 ... Glucosamine sulfate ... ATC code: M01AX05 Nonsteroidal antiinflammatory drug, Antirheumatics ...

  20. 78 FR 60297 - Center for Scientific Review; Notice of Closed Meetings

    Science.gov (United States)

    2013-10-01

    ..., Rockville, MD 20852. Contact Person: Leonid V. Tsap, Ph.D., Scientific Review Officer, Center for Scientific...: Residence Inn Bethesda, 7335 Wisconsin Avenue, Bethesda, MD 20814. Contact Person: Patrick K Lai, Ph.D...

  1. Dgroup: DG01946 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available nofibrate - pravastatin mixt D10857 ... Fenofibrate - simvastatin mist D10385 ... Ezetimibe - atorvastatin mixt ... ... D08488 ... Amlodipine besilate - atorvastatin calcium mixt ... D01291 ... Nicomol (JP17/INN) ... D01892 ... Icosapent

  2. Dgroup: DG02379 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02379 Chemical ... DGroup Brinzolamide ... D00652 ... Brinzolamide (JAN/USP/INN) ... ATC code: S01EC04 Antiglauco...ma, Carbonic anhydrase inhibitor CA2 [HSA:760] [KO:K18245] ...

  3. Isoseismals for the Kutch earthquake of 26th January 2001

    Indian Academy of Sciences (India)

    R. Narasimhan (Krishtel eMaging) 1461 1996 Oct 15 13:05:22

    2001-01-26

    Jan 26, 2001 ... of schools, hospitals, community inns and govern- ment offices. The survey ... Failure of columns occurred at ground storey level in most multistoreyed ... Acknowledgements. Professor and Head, Department of Earthquake.

  4. 77 FR 10539 - National Institute of Dental & Craniofacial Research; Notice of Closed Meeting

    Science.gov (United States)

    2012-02-22

    ... Research Special Emphasis Panel; RFA DE12-004 & 005 Functional Restoration of Salivary Glands. Date: March... Garden Inn, 7301 Waverly St., Bethesda, MD 20814. Contact Person: Marilyn Moore-Hoon, Ph.D., Scientific...

  5. NCBI nr-aa BLAST: CBRC-XTRO-01-0737 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-XTRO-01-0737 ref|YP_772985.1| binding-protein-dependent transport systems inne...r membrane component [Burkholderia cepacia AMMD] gb|ABI86651.1| binding-protein-dependent transport systems

  6. Dgroup: DG02388 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02388 Chemical ... DGroup Diazepam ... D00293 ... Diazepam (JP17/USP/INN) ... ATC code: ...N05BA01 Antianxiety, Minor tranquilizer, Sedative-hypnotic Benzodiazepine derivative GABRA/GABRB/GABRD/GABRE

  7. Alpha-mangostin attenuates oxidative stress and inflammation in ...

    African Journals Online (AJOL)

    implicated in autoimmune diseases because of ... Inflammation then induces joint disease and synovial damage ..... Anti-inflammatory and lysosomal stability actions of. Cleome ... McInnes IB, Schett G. The pathogenesis of rheumatoid arthritis.

  8. Drug: D07623 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available 01942 ... Iminobenzyl antipsychotic Chemical group: DG01312 ... Tricyclic antidepressant, Iminodibenzyl derivativ... D07623 Drug Carpipramine (INN) ... C28H38N4O D07623.gif ... Neuropsychiatric agent ... DG

  9. Dgroup: DG01918 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available litinib ... D09689 ... Varlitinib (USAN/INN) ... D09690 ... Varlitinib tosylate (USAN) ... DG01361 ... Crenolanib ... D10102 ... Crenolan...ib (USAN) ... D10103 ... Crenolanib besylate (USAN) ... DG01363 ... Toceranib ... D085

  10. "Bioneeride" Lisa Kiviristi ja John Ivanko ökohotell kogub USAs tuntust / Dagmar Lamp

    Index Scriptorium Estoniae

    Lamp, Dagmar

    2006-01-01

    Eesti juurtega Kivirist ja tema elukaaslane Ivanko peavad bed & breakfast-tüüpi hotelli Inn Serendipity, mis kasutab täielikult taastuvenergiat, kogu nende hotellindus põhineb mahepõllumajandusel ja taaskasutamisel

  11. 40 CFR 79.66 - Neuropathology assessment.

    Science.gov (United States)

    2010-07-01

    ... for vascular perfusion may be found in the text by Zeman and Innes (1963), Hayat (1970), and Spencer..., and necrosis) and tissue changes (e.g., gliosis, leukocytic infiltration, and cystic formation) shall...

  12. Dgroup: DG00980 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00980 Chemical ... DGroup Nizofenone ... D08280 ... Nizofenone (INN) D01465 ... Nizofenone fumarate (JAN) Neuropsych...iatric agent ... DG01972 ... Nootropic ATC code: N06BX10 Nervous system stimulant ...

  13. Dea Computrix - another deity for the Roman Pantheon? Journeys in the Roman Empire CD-Rom

    Directory of Open Access Journals (Sweden)

    T. Sam N. Moorhead

    2002-08-01

    Full Text Available This article outlines a personal view on the content and production of a CD-Rom on the Roman world produced by The British Museum, Channel 4, Verulamium Museum and Braunarts: Journeys in the Roman Empire. I discuss some of the benefits of and problems with multimedia production and outline feedback from various evaluation projects of the CD-Rom. I also briefly discuss the future of CD-Roms in the face of a rapidly expanding internet with reference to other multimedia projects at The British Museum.

  14. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    Science.gov (United States)

    Pérez-Caro, M.; Rodríguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-07-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>1019 cm-3), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  15. Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sangeetha, P.; Ramakrishnan, V. [Department of Laser Studies, School of Physics, Madurai Kamaraj University, Madurai-625 021 (India); Jeganathan, K. [Centre for Nanoscience and Nanotechnology, School of Physics, Bharathidasan University, Tiruchirappalli-620 024 (India)

    2013-06-15

    The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the characteristic E{sub 2} (high) and A{sub 1} (LO) phonon mode of InN core at 490 and 590 cm{sup -1} respectively and E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1}. The free carrier concentration of InN core is found to be low in the order {approx} 10{sup 16} cm{sup -3} due to the screening of charge carriers by thin GaN shell. Diameter of InN core evaluated using the spatial correlation model is consistent with the transmission electron microscopic measurement of {approx}15 nm. The phonon-life time of core-shell nanowire structure is estimated to be {approx}0.4 ps. The micro-Raman mapping and its corresponding localised spectra for 325 nm excitation exhibit intense E{sub 2} (high) phonon mode of GaN shell at 573 cm{sup -1} as the decrease of laser interaction length and the signal intensity is quenched at the voids due to high spacing of NWs.

  16. Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

    International Nuclear Information System (INIS)

    Perez-Caro, M.; Rodriguez, A. G.; Vidal, M. A.; Navarro-Contreras, H.

    2010-01-01

    Infrared optical studies were carried out in a group of cubic InN samples grown by gas source molecular beam epitaxy on MgO (001) substrates. Room temperature (RT) reflectance and low-temperature (LT) transmittance measurements were performed by using fast Fourier transform infrared spectrometry. Reflectance fittings allowed to establish that β-InN films have large free-carrier concentrations present (>10 19 cm -3 ), a result that is corroborated by Hall effect measurements. Each sample explored exhibited a different optical absorption edge. The Varshni parameters that describe adequately the optical absorption edge responses with temperature are obtained for the set of samples studied. The observed temperatures changes, from LT to RT, are the lowest reported for III-V semiconductor binary compounds. The temperature coefficient of the conduction band depends on the strength of the electron-phonon interaction (e-ph-i), as well as on the thermal expansion. It has been predicted that cubic InN has one of the smallest e-ph-i of all III-V compounds, which is corroborated by these results. The variation in values of absorption edges is clearly consistent with the Burstein-Moss and band renormalization effects, produced by high free electron concentrations. It is shown that the conduction band in β-InN, analogous to wurtzite InN, follows a nonparabolic behavior.

  17. Dgroup: DG02667 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02667 Chemical ... DGroup Teplizumab ... D09013 ... Teplizumab (USAN/INN) ... Antidiabetic, Anti-CD3 antibody... Monoclonal antibody CD3 [HSA:915 916 917] [KO:K06450 K06451 K06452] ...

  18. Dgroup: DG00694 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00694 Chemical ... DGroup Docetaxel ... D07866 ... Docetaxel (JAN/INN) ... D02165 ... Docetaxel (USAN); Doc...etaxel hydrate (JP17); Docetaxel injection (JP17); Docetaxel for injection (JP17) ... Cyp subs

  19. Dgroup: DG01196 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG01196 Chemical ... DGroup Samarium (153Sm) lexidronam ... D08504 ... Samarium (153Sm) lexidron...am (INN) D05795 ... Samarium Sm 153 lexidronam pentasodium (USAN); Samarium (153Sm) lexidronam sodium (JA

  20. Hotel Stouffer's Atlanta Inn. - Georgia (EE. UU.

    Directory of Open Access Journals (Sweden)

    Heery, -

    1976-04-01

    Full Text Available On a large 4-storey base structure rises a long, rather narrow 27-story tower. The 37,000 m2 of the hotel are distributed in the following manner: 525 hotel rooms, special suites, convention hall, meeting rooms; three restaurants with different interior decorations; ball room; cafeterias, shops; swimming-pools; additional installations that correspond to this hotel category. A chapter of great importance in the construction of the hotel was the interior planning and design. Different colour schemes, special furniture and a most varied selection of decorative and functional elements have been used. The materials and design of the exterior have been chosen with utmost care, whereby a contrast, though not a clash, with the adjacent buildings has been achieved. The hotel is completed with a 1,000-car parking deck, situated across the street and connected with the hotel by means of an over Street bridge.Está constituido por una amplia base de cuatro plantas, sobre la que se eleva una alta y esbelta torre de 27 plantas. En sus 37.000 m2 de superficie total se distribuyen: 525 habitaciones para clientes, incluyendo suites de categorías distintas; gran salón de congresos y salas de juntas y reuniones; tres restaurantes con distintas ambientaciones; sala de baile; cafeterías, tiendas; piscinas; y toda una serie de servicios propios de un hotel de esta categoría. Un capítulo de gran importancia en la construcción del hotel fue la ambientación interior, conseguida con diferentes esquemas de color, mobiliario especial y los más variados elementos decorativos y funcionales. El exterior también fue muy cuidado, empleándose materiales y diseños que contrastan, sin desentonar, con los edificios vecinos. El hotel se completa con un aparcamiento cubierto, de 1.000 plazas, situado al otro lado de la calle, y al que se une mediante un puente elevado.

  1. 75 FR 12519 - Notice of Intent To Prepare an Environmental Impact Statement for Beddown of Training F-35A Aircraft

    Science.gov (United States)

    2010-03-16

    ..., at Buena High School Cafeteria, 5225 Buena School Road, Sierra Vista, Arizona; Holloman Air Force... Mexico; Wednesday, April 14, 2010 at La Quinta Inn and Suites, 200 E 19th Street, Roswell, New Mexico...

  2. 77 FR 27742 - Notice of Public Meetings for the Draft Environmental Impact Statement/Overseas Environmental...

    Science.gov (United States)

    2012-05-11

    ..., VA; 5. June 12, 2012 (Tuesday) at Hampton Inn and Suites Swansboro, 215 Old Hammock Road, Swansboro... 32202. 14. Kill Devil Hills Branch Library, Main Library, 400 Mustian Street, Kill Devil Hills, NC 27948...

  3. Dgroup: DG02722 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available stic, TRAIL receptor 1 antibody Agonistic monoclonal antibody TNFRSF10A (TRAILR1, CD261) [HSA:8797] [KO:K04722] ... ... DG02722 Chemical ... DGroup Mapatumumab ... D04858 ... Mapatumumab (USAN/INN) ... Antineopla

  4. Dgroup: DG02668 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG02668 Chemical ... DGroup Visilizumab ... D06314 ... Visilizumab (USAN/INN) ... Immunosuppressant, Anti-CD3 antibod...y Monoclonal antibody CD3 [HSA:915 916 917] [KO:K06450 K06451 K06452] ...

  5. Dgroup: DG01732 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available (USAN/INN) D09350 ... Indeglitazar (USAN) Antidiabetic agent ... DG01685 ... Insulin sens...itizer ... DG01795 ... PPAR gamma agonist Other ... DG01733 ... PPAR agonist ... Antidiabetics, PPAR agonist NR1C1 (PPARA)

  6. Synovial fluid analysis

    Science.gov (United States)

    Joint fluid analysis; Joint fluid aspiration ... El-Gabalawy HS. Synovial fluid analysis, synovial biopsy, and synovial pathology. In: Firestein GS, Budd RC, Gabriel SE, McInnes IB, O'Dell JR, eds. Kelly's Textbook of ...

  7. NCBI nr-aa BLAST: CBRC-XTRO-01-0560 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-XTRO-01-0560 ref|YP_995556.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56538.1| binding-protein-dependent transport systems

  8. NCBI nr-aa BLAST: CBRC-CPOR-01-1994 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-CPOR-01-1994 ref|YP_995620.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56602.1| binding-protein-dependent transport systems

  9. NCBI nr-aa BLAST: CBRC-XTRO-01-0287 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-XTRO-01-0287 ref|YP_997917.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM58899.1| binding-protein-dependent transport systems

  10. NCBI nr-aa BLAST: CBRC-XTRO-01-0887 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-XTRO-01-0887 ref|YP_995619.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM56601.1| binding-protein-dependent transport systems

  11. NCBI nr-aa BLAST: CBRC-XTRO-01-0534 [SEVENS

    Lifescience Database Archive (English)

    Full Text Available CBRC-XTRO-01-0534 ref|YP_994945.1| binding-protein-dependent transport systems inne...r membrane component [Verminephrobacter eiseniae EF01-2] gb|ABM55927.1| binding-protein-dependent transport systems

  12. Light-Emitting Diodes: Research, Manufacturing, and Applications III

    National Research Council Canada - National Science Library

    Schubert, E

    1999-01-01

    .... Red LEDs with an emission wavelength of 680 nm which emission energy was smaller than the band-gap energy of InN were fabricated mainly resulting from the piezoelectric field due to the strain...

  13. Drug: D00107 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available D00107 Drug Tacrolimus (USAN/INN); Tacrolimus hydrate (JP17); Prograf (TN); Protopic... liver transplant [DS:H00083] Organ rejection in heart transplant [DS:H00083] Atopic dermatitis [DS:H01358

  14. Galileo's Telescopy and Jupiter's Tablet

    Science.gov (United States)

    Usher, P. D.

    2003-12-01

    A previous paper (BAAS 33:4, 1363, 2001) reported on the dramatic scene in Shakespeare's Cymbeline that features the descent of the deity Jupiter. The paper suggested that the four ghosts circling the sleeping Posthumus denote the four Galilean moons of Jupiter. The god Jupiter commands the ghosts to lay a tablet upon the prone Posthumus, but says that its value should not be overestimated. When Posthumus wakens he notices the tablet, which he calls a "book." Not only has the deity's "tablet" become the earthling's "book," but it appears that the book has covers which Posthumus evidently recognizes because without even opening the book he ascribes two further properties to it: rarity, and the very property that Jupiter had earlier attributed, viz. that one must not read too much into it. The mystery deepens when the Jovian gift undergoes a second metamorphosis, to "label." With the help of the OED, the potentially disparate terms "tablet," "book," and "label," may be explained by terms appropriate either to supernatural or worldly beings. "Tablet" may recognize the Mosaic artifact, whereas "book" and "label" are probably mundane references to Galileo's Sidereus Nuncius which appeared shortly before Cymbeline. The message of the Olympian god indicates therefore that the book is unique even as its contents have limited value. The first property celebrates the fact that Galileo's book is the first of its kind, and the second advises that all results except the discovery of Jupiter's moons have been reported earlier, in Hamlet.

  15. Tua Ji Peh: The Intricacies of Liminality in the Deification of Chinese non-Buddhist Supernatural Beings in Chinese-Malaysian Communities

    Directory of Open Access Journals (Sweden)

    Whitney Webb

    2012-05-01

    Full Text Available The pragmatic, responsive, and syncretic nature of popular Chinese religion is well known and is thought to result, in part, from the religion’s close connection to the fluxes of the social system in which its adherents live. These characteristics often result in considerable change when the social fabric is greatly disrupted, such as in the immigration of Chinese to new and unfamiliar places. This process of change is commonly seen among Chinese deities. Tua Peh大伯 and Ji Peh 二伯 (in Hokkien dialect “First Uncle” and “Second Uncle”, two ghostly deities of popular Chinese Malaysian religion, are understood to have an ambiguous status in the Chinese pantheon as they possess characteristics of both gods and ghosts. In China, these figures were simply part of the otherworldly bureaucracy of the hell realm with a very limited role and were worshipped infrequently. In the past 20 years, their worship has become extremely ubiquitous, with many shrines and temples proliferating. Now a variety of people come to them for wealth, for healings, and for protection. This coincides during a time in which the economic situation of Chinese Malaysians has become more difficult which parallels a significant rise in political tensions between Malays and non-Malays. This has caused a shift towards favorability in the deities’ reputation, the demographics of their worshippers, and the reasons patrons seek their assistance. Overall, the elevation of Tua Ji Peh seems to work towards lending legitimacy to those desperately seeking efficacious aid in a increasingly discriminatory and poltically unstable environment with harsher realities.

  16. Microstructures of group III-nitrides after implantation with gallium

    International Nuclear Information System (INIS)

    Kench, P.J.

    2001-05-01

    High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

  17. Dgroup: DG00591 [KEGG MEDICUS

    Lifescience Database Archive (English)

    Full Text Available DG00591 Chemical ... DGroup Meropenem ... D08185 ... Meropenem (INN) D02222 ... Meropenem (USP); Meropene...n group ... DG01458 ... Carbapenem ATC code: J01DH02 beta-Lactam antibiotics, carbapenem penicillin binding protein ...

  18. Aed, imelise rahu paik / Merilen Mentaal

    Index Scriptorium Estoniae

    Mentaal, Merilen, 1972-

    2008-01-01

    Chelsea Flower Show 2008 võistelnud aedadest. Kujundajateks Philip Nash, Andy Sturgeon, Buono Gazerwitz, Trevor Tooth, Philip Nixon, Thomas Hoblyn, Robert Myers, Tom Stuart-Smith, Yvonne Innes ja Olivia Harrison. 11 värv. ill

  19. Mitmekesine, mitmel viisil kesine / Ly Lestberg

    Index Scriptorium Estoniae

    Lestberg, Ly, 1965-

    2004-01-01

    Arvustus: Robbe-Grillet, Alain. Džinn : punane auk ebaühtlaste sillutuskivide vahel : moodsa aja lugemik = Djinn : un trou rouge entre les pavés disjoints / Heli Alliku tõlge. [Tallinn] : Valgus, 2004. (Homo ludens)

  20. [Raamat] / Tarmo Rajamets

    Index Scriptorium Estoniae

    Rajamets, Tarmo, 1969-

    2004-01-01

    Tutvustus: Robbe-Grillet, Alain. Džinn : punane auk ebaühtlaste sillutuskivide vahel : moodsa aja lugemik = Djinn : un trou rouge entre les pavés disjoints / Heli Alliku tõlge. [Tallinn] : Valgus, 2004. (Homo ludens)