Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

Science.gov (United States)

Quast, Thorben

2018-02-01

As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5-1.0 cm2 interspersed with absorbers. Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end ASIC (designed by the CALICE collaboration for ILC). In 2017, the setup has been extended with CALICE's AHCAL prototype, a scinitillator based sampling calorimeter, and it was further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end ASIC was used for the first time. We highlight final results from our studies in 2016, including position resolution as well as precision timing-measurements. Furthermore, the extended setup in 2017 is discussed and first results from beam tests with electrons and pions are shown.

Initial beam test results from a silicon-strip detector with VLSI readout

International Nuclear Information System (INIS)

Adolphsen, C.; Litke, A.; Schwarz, A.

1986-01-01

Silicon detectors with 256 strips, having a pitch of 25 μm, and connected to two 128 channel NMOS VLSI chips each (Microplex), have been tested in relativistic charged particle beams at CERN and at the Stanford Linear Accelerator Center. The readout chips have an input channel pitch of 47.5 μm and a single multiplexed output which provides voltages proportional to the integrated charge from each strip. The most probable signal height from minimum ionizing tracks was 15 times the rms noise in any single channel. Two-track traversals with a separation of 100 μm were cleanly resolved

Ion beam figuring of silicon aspheres

Science.gov (United States)

Demmler, Marcel; Zeuner, Michael; Luca, Alfonz; Dunger, Thoralf; Rost, Dirk; Kiontke, Sven; Krüger, Marcus

2011-03-01

Silicon lenses are widely used for infrared applications. Especially for portable devices the size and weight of the optical system are very important factors. The use of aspherical silicon lenses instead of spherical silicon lenses results in a significant reduction of weight and size. The manufacture of silicon lenses is more challenging than the manufacture of standard glass lenses. Typically conventional methods like diamond turning, grinding and polishing are used. However, due to the high hardness of silicon, diamond turning is very difficult and requires a lot of experience. To achieve surfaces of a high quality a polishing step is mandatory within the manufacturing process. Nevertheless, the required surface form accuracy cannot be achieved through the use of conventional polishing methods because of the unpredictable behavior of the polishing tools, which leads to an unstable removal rate. To overcome these disadvantages a method called Ion Beam Figuring can be used to manufacture silicon lenses with high surface form accuracies. The general advantage of the Ion Beam Figuring technology is a contactless polishing process without any aging effects of the tool. Due to this an excellent stability of the removal rate without any mechanical surface damage is achieved. The related physical process - called sputtering - can be applied to any material and is therefore also applicable to materials of high hardness like Silicon (SiC, WC). The process is realized through the commercially available ion beam figuring system IonScan 3D. During the process, the substrate is moved in front of a focused broad ion beam. The local milling rate is controlled via a modulated velocity profile, which is calculated specifically for each surface topology in order to mill the material at the associated positions to the target geometry. The authors will present aspherical silicon lenses with very high surface form accuracies compared to conventionally manufactured lenses.

Beam test performance of the SKIROC2 ASIC

CERN Document Server

Frisson, T; Anduze, M; Augustin, J.E; Bonis, J; Boudry, V; Bourgeois, C; Brient, J.C; Callier, S; Cerutti, M; Chen, S; Cornat, R; Cornebise, P; Cuisy, D; David, J; De la Taille, C; Dulucq, F; Frotin, M; Gastaldi, F; Ghislain, P; Giraud, J; Gonnin, A; Grondin, D; Guliyev, E; Hostachy, J.Y; Jeans, D; Kamiya, Y; Kawagoe, K; Kozakai, C; Lacour, D; Lavergne, L; Lee, S.H; Magniette, F; Ono, H; Poeschl, R; Rouëné, J; Seguin-Moreau, N; Song, H.S; Sudo, Y; Thiebault, A; Tran, H; Ueno, H; Van der Kolk, N; Yoshioka, T

2015-01-01

Beam tests of the first layers of CALICE silicon tungsten ECAL technological prototype were performed in April and July 2012 using 1–6 GeV electron beam at DESY. This paper presents an analysis of the SKIROC2 readout ASIC performance under test beam conditions.

Guided ultrasonic wave beam skew in silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2018-04-01

In the photovoltaic industry, monocrystalline silicon wafers are employed for solar cells with high conversion efficiency. Micro-cracks induced by the cutting process in the thin wafers can lead to brittle wafer fracture. Guided ultrasonic waves would offer an efficient methodology for the in-process non-destructive testing of wafers to assess micro-crack density. The material anisotropy of the monocrystalline silicon leads to variations of the guided wave characteristics, depending on the propagation direction relative to the crystal orientation. Selective guided ultrasonic wave excitation was achieved using a contact piezoelectric transducer with custom-made wedges for the A0 and S0 Lamb wave modes and a transducer holder to achieve controlled contact pressure and orientation. The out-of-plane component of the guided wave propagation was measured using a non-contact laser interferometer. The phase slowness (velocity) of the two fundamental Lamb wave modes was measured experimentally for varying propagation directions relative to the crystal orientation and found to match theoretical predictions. Significant wave beam skew was observed experimentally, especially for the S0 mode, and investigated from 3D finite element simulations. Good agreement was found with the theoretical predictions based on nominal material properties of the silicon wafer. The important contribution of guided wave beam skewing effects for the non-destructive testing of silicon wafers was demonstrated.

Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

CERN Document Server

Quast, Thorben

2017-01-01

As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5 - 1.0 cm$^2$ interspersed with absorbers.Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end chip (designed for the CALICE experiment for ILC). This year, the setup is extended with CALICE's AHCAL prototype and it is further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end chip is used for the first time.We present final results from our studies in 2016, including noise performance, calibration with MIPs, energy and p...

Ion beam heating of thin silicon membranes

International Nuclear Information System (INIS)

Tissot, P.E.; Hart, R.R.

1993-01-01

For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

Investigation of beam effect on porous silicon

Energy Technology Data Exchange (ETDEWEB)

Kotai, E. E-mail: kotai@rmki.kfki.hu; Paszti, F.; Szilagyi, E

2000-03-01

When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction.

Investigation of beam effect on porous silicon

International Nuclear Information System (INIS)

Kotai, E.; Paszti, F.; Szilagyi, E.

2000-01-01

When performing Rutherford Backscattering Spectroscopy (RBS) measurements combined with channeling on 'columnar' porous silicon (PS) samples with beam aligned to the direction of the pores, a strong beam effect was observed. The minimum yield as a function of the beam dose for different porous samples was compared with the yield measured on single crystal silicon. It was demonstrated that the beam effect strongly depends on the porosity of the sample. Bombardment in the random direction caused about 10% higher change in the minimum yield than in the channel direction

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Studies for a silicon telescope to extend the magnet facility at the DESY test beam

Energy Technology Data Exchange (ETDEWEB)

Tsionou, Dimitra [Deutsches Elektronen-Synchrotron (DESY), Notkestrasse 85, 22607 Hamburg (Germany)

2016-07-01

The International Large Detector is a detector concept for the International Linear Collider (ILC) which uses a Time Projection Chamber (TPC) as its main tracking detector. Within the framework of the LCTPC collaboration, a large prototype (LP) TPC has been built as a demonstrator. The LP has been equipped with Micro-Pattern Gas Detector modules and studied with an electron beam (1-6 GeV) in a 1 Tesla magnetic field at DESY. To extend the capabilities of the test beam setup, an external silicon tracker to be installed inside the magnet will be discussed. The silicon detector will provide high precision space points in front and behind the TPC inside the magnet. It will provide reference tracks that will allow to determine the momentum of the tracks passing the TPC, and which will help in correcting for field distortion effects in the LPTPC volume. In order to meet these requirements, simulation studies have been performed to determine the layout of the system and have placed stringent requirements on the sensor spatial resolution of better than 10 μ m. These studies will be presented along with the hardware options under evaluation.

First results from a beam test of a high-granularity silicon-based calorimeter for CMS at HL-LHC

CERN Document Server

Chatterjee, Rajdeep Mohan

2016-01-01

A prototype of the electromagnetic calorimeter for the CMS High Granularity Calorimeter that is being designed for the High Luminosity LHC (HL-LHC) was tested in a test beam at the Fermilab Test Beam Facility (FTBF). The detector consisted of 16 sampling layers of silicon sensors interspersed withtungsten plates for a total thickness of 15.3 X$_{0}$. Each of the hexagonal sensors were sub-divided into 128 cells, predominantly hexagonal in shape, of area ~1.1 cm$^2$. The analog signal from the 2048 cells was readout using the 64-channel SKIROC2 ASIC, developed by the LLR OMEGA group for the CALICE collaboration. Data were collected with a custom data acquisition system developed for these tests. The detector was calibrated using signals obtained with 120 GeV protons.We report here the design of the prototype detector and the results obtained from analyzing the data collected in July 2016, with electron beams at energies ranging from 4 to 32 GeV.

A beam monitor using silicon pixel sensors for hadron therapy

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

2017-03-21

We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

Energy Technology Data Exchange (ETDEWEB)

Kurfürst, C.; Dehning, B.; Sapinski, M.; Bartosik, M.R.; Eisel, T.; Fabjan, C.; Rementeria, C.A. [CERN, Geneva (Switzerland); Griesmayer, E. [CIVIDEC Instrumentation, GmbH, Vienna (Austria); Eremin, V. [Ioffe Institute, St. Petersburg (Russian Federation); Verbitskaya, E., E-mail: elena.verbitskaya@cern.ch [Ioffe Institute, St. Petersburg (Russian Federation); Zabrodskii, A.; Fadeeva, N.; Tuboltsev, Y.; Eremin, I. [Ioffe Institute, St. Petersburg (Russian Federation); Egorov, N. [Research Institute of Material Science and Technology, Zelenograd, Moscow (Russian Federation); Härkönen, J.; Luukka, P.; Tuominen, E. [Helsinki Institute of Physics, Helsinki (Finland)

2015-05-11

As a result of the foreseen increase in the luminosity of the Large Hadron Collider, the discrimination between the collision products and possible magnet quench-provoking beam losses of the primary proton beams is becoming more critical for safe accelerator operation. We report the results of ongoing research efforts targeting the upgrading of the monitoring system by exploiting Beam Loss Monitor detectors based on semiconductors located as close as possible to the superconducting coils of the triplet magnets. In practice, this means that the detectors will have to be immersed in superfluid helium inside the cold mass and operate at 1.9 K. Additionally, the monitoring system is expected to survive 20 years of LHC operation, resulting in an estimated radiation fluence of 1×10{sup 16} proton/cm{sup 2}, which corresponds to a dose of about 2 MGy. In this study, we monitored the signal degradation during the in situ irradiation when silicon and single-crystal diamond detectors were situated in the liquid/superfluid helium and the dependences of the collected charge on fluence and bias voltage were obtained. It is shown that diamond and silicon detectors can operate at 1.9 K after 1×10{sup 16} p/cm{sup 2} irradiation required for application as BLMs, while the rate of the signal degradation was larger in silicon detectors than in the diamond ones. For Si detectors this rate was controlled mainly by the operational mode, being larger at forward bias voltage. - Highlights: • Silicon and diamond detectors are proposed for beam loss monitoring at LHC. • The first in situ radiation test of Si and diamond detectors at 1.9 K is described. • Both diamond and silicon detectors survived after 1×10{sup 16} p/cm{sup 2} irradiation at 1.9 K. • The rate of Si detectors degradation depends on bias polarity and is larger at V{sub forw}. • Sensitivity of Si detectors irradiated to 1×10{sup 16} p/cm{sup 2} is independent on resistivity.

arXiv Construction and beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

CERN Document Server

INSPIRE-00664095

2018-02-26

As part of its HL-LHC upgrade program, CMS is developing a High Granularity Calorimeter (HGCAL) to replace the existing endcap calorimeters. The HGCAL will be realised as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5–1.0 cm2 interspersed with absorbers. Prototype modules, based on 6-inch hexagonal silicon pad sensors with 128 channels, have been constructed and include many of the features required for this challenging detector. In 2016, beam tests of sampling configurations made from these modules have been conducted both at FNAL and at CERN using the Skiroc2 front-end ASIC (designed by the CALICE collaboration for ILC). In 2017, the setup has been extended with CALICE's AHCAL prototype, a scinitillator based sampling calorimeter, and it was further tested in dedicated beam tests at CERN. There, the new Skiroc2-CMS front-end ASIC was used for the first time. We highlight final results from our studies in 2016, including ...

GTK beam test 2017

CERN Document Server

Vostinic, Snezana

2017-01-01

The GTK is in operation at NA62 since 2014 and is among the few silicon pixel detectors performing 4D tracking. This summer, a beam test was conducted to study the phenomena determining the detector time resolution. The project described here contributed to the beam test preparation, data taking and data analyses. One of the main goals of the test was to understand the weight field contribution to the detector time resolution. This field is distorting the signal pulse shape at the edge of the pixel. Hence, to study this effect, the position of the hits inside the pixel has to be determined. An external telescope was therefore used for this purpose.

Laboratory and test beam results from a large-area silicon drift detector

CERN Document Server

Bonvicini, V; Giubellino, P; Gregorio, A; Idzik, M; Kolojvari, A A; Montaño-Zetina, L M; Nouais, D; Petta, C; Rashevsky, A; Randazzo, N; Reito, S; Tosello, F; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A very large-area (6.75*8 cm/sup 2/) silicon drift detector with integrated high-voltage divider has been designed, produced and fully characterised in the laboratory by means of ad hoc designed MOS injection electrodes. The detector is of the "butterfly" type, the sensitive area being subdivided into two regions with a maximum drift length of 3.3 cm. The device was also tested in a pion beam (at the CERN PS) tagged by means of a microstrip detector telescope. Bipolar VLSI front-end cells featuring a noise of 250 e/sup -/ RMS at 0 pF with a slope of 40 e/sup -//pF have been used to read out the signals. The detector showed an excellent stability and featured the expected characteristics. Some preliminary results will be presented. (12 refs).

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

Use of Silicon Carbide as Beam Intercepting Device Material: Tests, Issues and Numerical Simulations

CERN Document Server

Delonca, M; Gil Costa, M; Vacca, A

2014-01-01

Silicon Carbide (SiC) stands as one of the most promising ceramic material with respect to its thermal shock resistance and mechanical strengths. It has hence been considered as candidate material for the development of higher performance beam intercepting devices at CERN. Its brazing with a metal counterpart has been tested and characterized by means of microstructural and ultrasound techniques. Despite the positive results, its use has to be evaluated with care, due to the strong evidence in literature of large and permanent volumetric expansion, called swelling, under the effect of neutron and ion irradiation. This may cause premature and sudden failure, and can be mitigated to some extent by operating at high temperature. For this reason limited information is available for irradiation below 100°C, which is the typical temperature of interest for beam intercepting devices like dumps or collimators. This paper describes the brazing campaign carried out at CERN, the results, and the theoretical and numeric...

Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

CERN Document Server

Adriani, O

1997-01-01

We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

Electron beam silicon purification

Energy Technology Data Exchange (ETDEWEB)

Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

2014-11-15

Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electron and ion beam degradation effects in AES analysis of silicon nitride thin films

International Nuclear Information System (INIS)

Fransen, F.; Vanden Berghe, R.; Vlaeminck, R.; Hinoul, M.; Remmerie, J.; Maes, H.E.

1985-01-01

Silicon nitride films are currently investigated by AES combined with ion profiling techniques for their stoichiometry and oxygen content. During this analysis, ion beam and primary electron effects were observed. The effect of argon ion bombardment is the preferential sputtering of nitrogen, forming 'covalent' silicon at the surface layer (AES peak at 91 eV). The electron beam irradiation results in a decrease of the covalent silicon peak, either by an electron beam annealing effect in the bulk of the silicon nitride film, or by an ionization enhanced surface diffusion process of the silicon (electromigration). By the electron beam annealing, nitrogen species are liberated in the bulk of the silicon nitride film and migrate towards the surface where they react with the covalent silicon. The ionization enhanced diffusion originates from local charging of the surface, induced by the electron beam. (author)

Test-Beam Results on <100> Silicon Prototype Detectors with APV6 Front-End Chip Readout

CERN Document Server

Winkler, Matthias

2000-01-01

Results are presented using data collected during the X5 test-beam performed in August 1999. To achieve a good estimate of signal and noise values, the raw data are processed off-line by a dedicated reconstruction program. In particular, an efficient algorithm for pedestal, noise and common mode calculation was developed and tested. The intrinsic performances of an AC-coupled CMS silicon micro-strip multi-geometry prototype detector, with a <100> crystal orientation and a low resistivity ( 1~k Omega cm), are investigated. This detector was exposed to an irradiation fluence of 3 imes10^{14} p/cm ^2 , equivalent to 10 years of operation at LHC. The signal-to-noise ratio and the ghost rates per strip and per cm ^2 are presented, as a function of the bias voltage.

Beam tests of lead tungstate crystal matrices and a silicon strip preshower detector for the CMS electromagnetic calorimeter

CERN Document Server

Auffray, Etiennette; Barney, D; Bassompierre, Gabriel; Benhammou, Ya; Blick, A M; Bloch, P; Bonamy, P; Bourotte, J; Buiron, L; Cavallari, F; Chipaux, Rémi; Cockerill, D J A; Dafinei, I; Davies, G; Depasse, P; Deiters, K; Diemoz, M; Dobrzynski, Ludwik; Donskov, S V; Mamouni, H E; Ercoli, C; Faure, J L; Felcini, Marta; Gautheron, F; Géléoc, M; Givernaud, Alain; Gninenko, S N; Godinovic, N; Graham, D J; Guillaud, J P; Guschin, E; Haguenauer, Maurice; Hillemanns, H; Hofer, H; Ille, B; Inyakin, A V; Jääskeläinen, S; Katchanov, V A; Kirn, T; Kloukinas, Kostas C; Korzhik, M V; Lassila-Perini, K M; Lebrun, P; Lecoq, P; Lecoeur, Gérard; Lecomte, P; Leonardi, E; Locci, E; Loos, R; Longo, E; MacKay, C K; Martin, E; Mendiburu, J P; Musienko, Yu V; Nédélec, P; Nessi-Tedaldi, F; Organtini, G; Paoletti, S; Pansart, J P; Peigneux, J P; Puljak, I; Qian, S; Reid, E; Renker, D; Rosowsky, A; Rosso, E; Rusack, R W; Rykaczewski, H; Schneegans, M; Seez, Christopher J; Semeniouk, I N; Shagin, P M; Sillou, D; Singovsky, A V; Sougonyaev, V; Soric, I; Verrecchia, P; Vialle, J P; Virdee, Tejinder S; Zhu, R Y

1998-01-01

Tests of lead tungstate crystal matrices carried out in high-energy electron beams in 1996, using new crystals, new APDs and an improved test set-up, confirm that an energy resolution of better than 0 .6% at 100 GeV can be obtained when the longitudinal uniformity of the struck crystal is adequate. Light loss measurements under low dose irradiation are reported. It is shown that there is no loss of energy resolution after irradiation and that the calibration change due to light loss can be tracked with a precision monitoring system. Finally, successuful tests with a preshower device, equipped wi th silicon strip detector readout, are described.

Construction and first beam-tests of silicon-tungsten prototype modules for the CMS High Granularity Calorimeter for HL-LHC

CERN Document Server

Romeo, Francesco

2017-01-01

The High Granularity Calorimeter (HGCAL) is the technology choice of the CMS collaboration for the endcap calorimetry upgrade planned to cope with the harsh radiation and pileup environment at the High Luminosity-LHC. The HGCAL is realized as a sampling calorimeter, including an electromagnetic compartment comprising 28 layers of silicon pad detectors with pad areas of 0.5 - 1.0 square centimetres interspersed with absorbers. Prototype modules, based on hexagonal silicon pad sensors, with 128 channels, have been constructed and tested in beams at FNAL and at CERN. The modules include many of the features required for this challenging detector, including a PCB glued directly to the sensor, using through-hole wire-bonding for signal readout and ~5mm spacing between layers - including the front-end electronics and all services. Tests in 2016 have used an existing front-end chip - Skiroc2 (designed for the CALICE experiment for ILC). We present results from first tests of these modules both in the laboratory and ...

Silicon radiation detector analysis using back electron beam induced current

International Nuclear Information System (INIS)

Guye, R.

1987-01-01

A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Cartiglia, N., E-mail: cartiglia@to.infn.it [INFN, Torino (Italy); Staiano, A.; Sola, V. [INFN, Torino (Italy); Arcidiacono, R. [INFN, Torino (Italy); Università del Piemonte Orientale (Italy); Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R. [INFN, Torino (Italy); Università di Torino, Torino (Italy); Bellora, A.; Durando, S. [Università di Torino, Torino (Italy); Mandurrino, M. [Politecnico di Torino, Torino (Italy); Minafra, N. [University of Kansas, KS (United States); Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E. [SCIPP, University of California Santa Cruz, CA 95064 (United States); and others

2017-04-01

In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm{sup 2}. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Science.gov (United States)

Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Bogdanov, A.; Shepelev, A.; Dehning, B.; Bartosik, M. R.; Alexopoulos, A.; Glaser, M.; Ravotti, F.; Sapinski, M.; Härkönen, J.; Egorov, N.; Galkin, A.

2017-03-01

Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9-4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9-4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

Test-beam evaluation of heavily irradiated silicon strip modules for ATLAS Phase-II Strip Tracker Upgrade

CERN Document Server

Blue, Andrew; The ATLAS collaboration

2018-01-01

The planned HL-LHC (High Luminosity LHC) is being designed to maximise the physics potential of the LHC with 10 years of operation at instantaneous luminosities of 7.5x1034cm−2s−1. A consequence of this increased luminosity is the expected radiation damage requiring the tracking detectors to withstand hadron equivalences to over 1x1015 1 MeV neutron equivalent per cm2 in the ATLAS Strips system. The silicon strip tracker exploits the concept of modularity. Fast readout electronics, deploying 130nm CMOS front-end electronics are glued on top of a silicon sensor to make a module. The radiation hard n-in-p micro-strip sensors used have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics. A series of tests were performed at the DESY-II and CERN SPS test beam facilities to investigate the detailed performance of a strip module with both 2.5cm and 5cm length strips before and after irradiation with 8x1014neqcm−2 protons and a total ionising dose of 37.2MRad. The DURA...

Muon flux measurement with silicon detectors in the CERN neutrino beams

International Nuclear Information System (INIS)

Heijne, E.H.M.

1983-01-01

The neutrino beam installations at the CERN SPS accelerator are described, with emphasis on the beam monitoring systems. Especially the muon flux measurement system is considered in detail, and the calibration procedure and systematic aspects of the measurements are discussed. An introduction is given to the use of silicon semiconductor detectors and their related electronics. Other special chapters concern non-linear phenomena in the silicon detectors, radiation damage in silicon detectors, energy loss and energy deposition in silicon and a review of energy loss phenomena for high energy muons in matter. (orig.)

Construction and test of a silicon drift chamber

International Nuclear Information System (INIS)

Holl, P.

1985-06-01

The present thesis presents the first fully applicable silicon detectors which work as drift chambers. Four different types of detectors were constructed. By a suitable geometry and electronic lay-out one- and two-dimensional position measurements were made possible. Chapter 2 describes function and construction of the detectors, chapter 3 their fabrication process. In chapter 4 construction and results of the test of a silicon drift chamber under laboratory conditions are described. By variation of the applied voltages the optimal operational conditions could be determined and material properties of the silicon, as for instance the electron mobility measured. A position resolution better than 5 μm at a drift length up to 4 mm was reached. Chapter 5 presents the results of the test of a silicon drift chamber under real experimental conditions in a particle beam of the super proton synchroton (SPS) of CERN. The best position resolution measured there is 10 μm. Chapter 6 summarizes the obtained results and discusses finally application possibilities and improvement proposals for silicon drift chambers. (orig./HSI) [de

Beam delivery system with a non-digitized diffractive beam splitter for laser-drilling of silicon

Science.gov (United States)

Amako, J.; Fujii, E.

2016-02-01

We report a beam-delivery system consisting of a non-digitized diffractive beam splitter and a Fourier transform lens. The system is applied to the deep-drilling of silicon using a nanosecond pulse laser in the manufacture of inkjet printer heads. In this process, a circularly polarized pulse beam is divided into an array of uniform beams, which are then delivered precisely to the process points. To meet these requirements, the splitter was designed to be polarization-independent with an efficiency>95%. The optical elements were assembled so as to allow the fine tuning of the effective overall focal length by adjusting the wavefront curvature of the beam. Using the system, a beam alignment accuracy ofbeam array and the throughput was substantially improved (10,000 points on a silicon wafer drilled in ~1 min). This beam-delivery scheme works for a variety of laser applications that require parallel processing.

Pulse Shape Characterization of Silicon Diodes for HGCal with data from Beam Test at CERN

CERN Document Server

De Silva, Malinda

2016-01-01

The High Luminosity phase of the LHC (starting operation in 2025) will provide unprecedented instantaneous and integrated luminosity, with 25 ns bunch crossing intervals and up to 140 pileup events. A challenge is to provide excellent physics performance in such a harsh environment to fully exploit the HL-LHC potentialities and explore new physics frontiers. In this context, the High Granularity Calorimeter is the detector designed to provide electromagnetic and hadronic energy coverage and reconstruction in the forward direction of the upgraded CMS. In April 2016 and June 2016, a set of 36 diodes were tested in order to understand various characteristics of its performance, in order to use them in the upgraded HG Calorimeter. Here, the silicon diodes were mounted onto a test bench at CERN’s beam test area and exposed to electron showers. Data received from these diodes were acquired and analysed separately. The objective of this report is to show the variation of Time Rise, Time Over Threshold with various...

Hybrid Design, Procurement and Testing for the LHCb Silicon Tracker

CERN Document Server

Bay, A; Frei, R; Jiménez-Otero, S; Perrin, A; Tran, MT; Van Hunen, J J; Vervink, K; Vollhardt, A; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Knöpfle, K T; Löchner, S; Schmelling, M; Schwingenheuer, B; Smale, N J; Adeva, B; Esperante-Pereira, D; Lois, C; Vázquez, P; Lehner, F; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Needham, M; Steinkamp, O; Straumann, U; Volyanskyy, D; Voss, H; Wenger, A

2005-01-01

The Silicon Tracker of the LHCb experiment consists of four silicon detector stations positioned along the beam line of the experiment. The detector modules of each station are constructed from wide pitch silicon microstrip sensors. Located at the module's end, a polyimide hybrid is housing the front-end electronics. The assembly of the more than 600 hybrids has been outsourced to industry. We will report on the design and production status of the hybrids for the LHCb Silicon Tracker and describe the quality assurance tests. Particular emphasis is laid on the vendor qualifying and its impact on our hybrid design that we experienced during the prototyping phase.

Test Beam Results of a 3D Diamond Detector

CERN Document Server

Dunser, Marc

2015-01-01

3D pixel technology has been used successfully in the past with silicon detectors for tracking applications. Recently, a first prototype of the same 3D technology has been produced on a chemical vapour deposited single-crystal diamond sensor. This device has been subsequently tested in a beam test at CERN’s SPS accelerator in a beam of 120 GeV protons. Details on the production and results of testbeam data are presented.

Production and test of the LHCf microstrip silicon system

International Nuclear Information System (INIS)

Bonechi, L.; Adriani, O.; Bongi, M.; Castellini, G.; D'Alessandro, R.; Faus, A.; Haguenauer, M.; Itow, Y.; Kasahara, K.; Macina, D.; Mase, T.; Masuda, K.; Matsubara, Y.; Matsumoto, H.; Menjo, H.; Mizuishi, M.; Muraki, Y.; Papini, P.; Perrot, A.L.; Ricciarini, S.

2008-01-01

After a preliminary installation test, successfully performed in 2007, both the detectors of the LHCf experiment are now ready to be installed at the CERN LHC accelerator for the first physics run. A beam test at SPS in September 2007 allowed to verify the performance of the apparata. Production and test of the silicon tracker developed for one of them are shortly discussed in this work.

Proceedings of the 2. International Linear Collider Test-beam workshop - LCTW'09

International Nuclear Information System (INIS)

Wormser, G.; Poeschl, R.; Takeshi, M.; Yu, J.; Hauptman, J.; Jeans, D.; Velthuis, J.; Repond, J.; Stanitzki, M.; Chefdeville, M.; Pauletta, G.; Hauptman, J.; Kulis, S.; Charpy, A.; Rivera, R.; Turchetti, M.; Vos, M.; Dehmelt, K.; Settles, R.; Decotigny, D.; Killenberg, M.; Haas, D.; Gaede, F.; Graf, N.; Wing, M.; Gaede, F.; Karstensen, S.; Meyners, N.; Hast, C.; Vrba, V.; Takeshita, T.; Kawagoe, K.; Linssen, L.; Ramberg, E.; Demarteau, M.; Fisk, H.E.; Savoy-Navarro, A.; Videau, H.; Boudry, V.; Hauptman, J.; Lipton, R.; Nelson, T.

2009-01-01

At this workshop detector and simulation experts have described and discussed the necessary ILC (International Linear Collider) detector research and development program in view of its need for test beams. This workshop has provided an opportunity to evaluate the capabilities and shortcomings of existing facilities in the context of planned test beam activities. This document gathers together the slides of the presentations. The presentations have been classified into 4 topics: -) plans of sub-detectors - calorimetry, silicon and gaseous tracking, -) data acquisition, -) test beam facilities, and -) resources and infrastructure for future test beams

Inverse design engineering of all-silicon polarization beam splitters

DEFF Research Database (Denmark)

Frandsen, Lars Hagedorn; Sigmund, Ole

2016-01-01

Utilizing the inverse design engineering method of topology optimization, we have realized high-performing all-silicon ultra-compact polarization beam splitters. We show that the device footprint of the polarization beam splitter can be as compact as similar to 2 µm2 while performing experimentally...

Test beam demonstration of silicon microstrip modules with transverse momentum discrimination for the future CMS tracking detector

Science.gov (United States)

Adam, W.; Bergauer, T.; Brondolin, E.; Dragicevic, M.; Friedl, M.; Frühwirth, R.; Hoch, M.; Hrubec, J.; König, A.; Steininger, H.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Lauwers, J.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Beghin, D.; Brun, H.; Clerbaux, B.; De Lentdecker, G.; Delannoy, H.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Léonard, A.; Luetic, J.; Maerschalk, T.; Marinov, A.; Postiau, N.; Randle-Conde, A.; Seva, T.; Vanlaer, P.; Vannerom, D.; Yonamine, R.; Wang, Q.; Yang, Y.; Zenoni, F.; Zhang, F.; Abu Zeid, S.; Blekman, F.; De Bruyn, I.; De Clercq, J.; D'Hondt, J.; Deroover, K.; Lowette, S.; Moortgat, S.; Moreels, L.; Python, Q.; Skovpen, K.; Van Mulders, P.; Van Parijs, I.; Bakhshiansohi, H.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Delaere, C.; Delcourt, M.; De Visscher, S.; Francois, B.; Giammanco, A.; Jafari, A.; Cabrera Jamoulle, J.; De Favereau De Jeneret, J.; Komm, M.; Krintiras, G.; Lemaitre, V.; Magitteri, A.; Mertens, A.; Michotte, D.; Musich, M.; Piotrzkowski, K.; Quertenmont, L.; Szilasi, N.; Vidal Marono, M.; Wertz, S.; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G. H.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Vander Donckt, M.; Viret, S.; Agram, J.-L.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.-M.; Chabert, E.; Chanon, N.; Charles, L.; Conte, E.; Fontaine, J.-Ch.; Gross, L.; Hosselet, J.; Jansova, M.; Tromson, D.; Autermann, C.; Feld, L.; Karpinski, W.; Kiesel, K. M.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Rauch, M.; Schael, S.; Schomakers, C.; Schulz, J.; Schwering, G.; Wlochal, M.; Zhukov, V.; Pistone, C.; Fluegge, G.; Kuensken, A.; Pooth, O.; Stahl, A.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garay Garcia, J.; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schuetze, P.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Klanner, R.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmeyer, A.; Kudella, S.; Muller, Th.; Printz, M.; Simonis, H. J.; Steck, P.; Weber, M.; Weiler, Th.; Anagnostou, G.; Asenov, P.; Assiouras, P.; Daskalakis, G.; Kyriakis, A.; Loukas, D.; Paspalaki, L.; Siklér, F.; Veszprémi, V.; Bhardwaj, A.; Dalal, R.; Jain, G.; Ranjan, K.; Dutta, S.; Chowdhury, S. Roy; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; Creanza, D.; De Palma, M.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Saizu, M. A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Latino, G.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Scarlini, E.; Sguazzoni, G.; Strom, D.; Viliani, L.; Ferro, F.; Lo Vetere, M.; Robutti, E.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Riceputi, E.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Alunni Solestizi, L.; Biasini, M.; Bilei, G. M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Magazzu, G.; Martini, L.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Bellan, R.; Costa, M.; Covarelli, R.; Da Rocha Rolo, M.; Demaria, N.; Rivetti, A.; Dellacasa, G.; Mazza, G.; Migliore, E.; Monteil, E.; Pacher, L.; Ravera, F.; Solano, A.; Fernandez, M.; Gomez, G.; Jaramillo Echeverria, R.; Moya, D.; Gonzalez Sanchez, F. J.; Vila, I.; Virto, A. L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Bonnaud, J.; Caratelli, A.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Auria, A.; Detraz, S.; Deyrail, D.; Dondelewski, O.; Faccio, F.; Frank, N.; Gadek, T.; Gill, K.; Honma, A.; Hugo, G.; Jara Casas, L. M.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Krammer, M.; Lenoir, P.; Mannelli, M.; Marchioro, A.; Marconi, S.; Mersi, S.; Martina, S.; Michelis, S.; Moll, M.; Onnela, A.; Orfanelli, S.; Pavis, S.; Peisert, A.; Pernot, J.-F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.-C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.-H.; Dietz, C.; Grundler, U.; Hou, W.-S.; Lu, R.-S.; Moya, M.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; Seif El Nasr-Storey, S.; Cole, J.; Hoad, C.; Hobson, P.; Morton, A.; Reid, I. D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; James, T.; Magnan, A.-M.; Pesaresi, M.; Raymond, D. M.; Uchida, K.; Braga, D.; Coughlan, J. A.; Harder, K.; Jones, L.; Ilic, J.; Murray, P.; Prydderch, M.; Tomalin, I. R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B. R.; Gerosa, R.; Sharma, V.; Vartak, A.; Yagil, A.; Zevi Della Porta, G.; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; Mullin, S.; Qu, H.; White, D.; Dominguez, A.; Bartek, R.; Cumalat, J. P.; Ford, W. T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S. R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J. N.; Cheung, H. W. K.; Chramowicz, J.; Christian, D.; Cooper, W. E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Lei, C. M.; Lipton, R.; Lopes De Sá, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D. R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Evdokimov, O.; Gerber, C. E.; Hofman, D. J.; Makauda, S.; Mills, C.; Sandoval Gonzalez, I. D.; Alimena, J.; Antonelli, L. J.; Francis, B.; Hart, A.; Hill, C. S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D. H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J. G.; Cremaldi, L. M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Claes, D. R.; Fangmeier, C.; Gonzalez Suarez, R.; Monroy, J.; Siado, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Ramirez Vargas, J. E.; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K. M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Covarelli, R.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Patel, R.; Perloff, A.; Ulmer, K. A.; Delannoy, A. G.; D'Angelo, P.; Johns, W.

2018-03-01

A new CMS Tracker is under development for operation at the High Luminosity LHC from 2026 onwards. It includes an outer tracker based on dedicated modules that will reconstruct short track segments, called stubs, using spatially coincident clusters in two closely spaced silicon sensor layers. These modules allow the rejection of low transverse momentum track hits and reduce the data volume before transmission to the first level trigger. The inclusion of tracking information in the trigger decision is essential to limit the first level trigger accept rate. A customized front-end readout chip, the CMS Binary Chip (CBC), containing stub finding logic has been designed for this purpose. A prototype module, equipped with the CBC chip, has been constructed and operated for the first time in a 4 GeemVem/emc positron beam at DESY. The behaviour of the stub finding was studied for different angles of beam incidence on a module, which allows an estimate of the sensitivity to transverse momentum within the future CMS detector. A sharp transverse momentum threshold around 2 emVem/emc was demonstrated, which meets the requirement to reject a large fraction of low momentum tracks present in the LHC environment on-detector. This is the first realistic demonstration of a silicon tracking module that is able to select data, based on the particle's transverse momentum, for use in a first level trigger at the LHC . The results from this test are described here.

Construction and beam-tests of silicon-tungsten and scintillator-SiPM modules for the CMS High Granularity Calorimeter for HL-LHC

CERN Document Server

Chang, Yung-wei

2018-01-01

A High Granularity Calorimeter (HGCAL) is being designed to replace the existing endcap calorimeters in CMS for the HL-LHC era. It features unprecedented transverse and longitudinal segmentation for both electromagnetic (ECAL) and hadronic (HCAL) compartments, with silicon sensors being chosen for the high-pseudorapidity regions due to their radiation tolerance. The remainder of the HGCAL, in the lower radiation environment, will use plastic scintillator with on-tile SiPM readout. Prototype hexagonal silicon modules, featuring a new Skiroc2-CMS front-end chip, together with a modified version of the scintillator-SiPM CALICE AHCAL, have been built and tested in beams at CERN in 2017. In this poster, we present measurements of noise, calibration, shower shapes and performance with electrons, pions and muons.

The cryogenic silicon Beam Tracker of NA60 for heavy ion and proton beams

International Nuclear Information System (INIS)

Rosinsky, P.; Borer, K.; Casagrande, L.; Devaux, A.; Granata, V.; Guettet, N.; Hess, M.; Heuser, J.; Jarron, P.; Li, Z.; Lourenco, C.; Manso, F.; Niinikoski, T.O.; Palmieri, V.G.; Radermacher, E.; Shahoyan, R.; Sonderegger, P.

2003-01-01

The cryogenic silicon Beam Tracker of NA60 is the first detector based on the Lazarus effect used in a high-energy physics experiment. It employs single-sided silicon strip sensors of 50 μm pitch operated at a temperature of 130 K. Two tracking stations determine the transverse coordinates of the interaction point at the target with 20 μm resolution, to improve the determination of the offset of secondary vertices. This impact parameter measurement allows NA60 to distinguish between prompt dimuons and muon pairs from D-meson decays. The detector concept and technical feasibility have been demonstrated in beam time periods between 1999 and 2002

Effects of laser fluence on silicon modification by four-beam laser interference

International Nuclear Information System (INIS)

Zhao, Le; Li, Dayou; Wang, Zuobin; Yue, Yong; Zhang, Jinjin; Yu, Miao; Li, Siwei

2015-01-01

This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm 2 , 495 mJ/cm 2 , and 637 mJ/cm 2 , the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7–9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications

Test-beam results of a SOI pixel detector prototype

CERN Document Server

Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

2018-01-01

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

Alignment of the Pixel and SCT Modules for the 2004 ATLAS Combined Test Beam

Energy Technology Data Exchange (ETDEWEB)

ATLAS Collaboration; Ahmad, A.; Andreazza, A.; Atkinson, T.; Baines, J.; Barr, A.J.; Beccherle, R.; Bell, P.J.; Bernabeu, J.; Broklova, Z.; Bruckman de Renstrom, P.A.; Cauz, D.; Chevalier, L.; Chouridou, S.; Citterio, M.; Clark, A.; Cobal, M.; Cornelissen, T.; Correard, S.; Costa, M.J.; Costanzo, D.; Cuneo, S.; Dameri, M.; Darbo, G.; de Vivie, J.B.; Di Girolamo, B.; Dobos, D.; Drasal, Z.; Drohan, J.; Einsweiler, K.; Elsing, M.; Emelyanov, D.; Escobar, C.; Facius, K.; Ferrari, P.; Fergusson, D.; Ferrere, D.; Flick,, T.; Froidevaux, D.; Gagliardi, G.; Gallas, M.; Gallop, B.J.; Gan, K.K.; Garcia, C.; Gavrilenko, I.L.; Gemme, C.; Gerlach, P.; Golling, T.; Gonzalez-Sevilla, S.; Goodrick, M.J.; Gorfine, G.; Gottfert, T.; Grosse-Knetter, J.; Hansen, P.H.; Hara, K.; Hartel, R.; Harvey, A.; Hawkings, R.J.; Heinemann, F.E.W.; Henss, T.; Hill, J.C.; Huegging, F.; Jansen, E.; Joseph, J.; Unel, M. Karagoz; Kataoka, M.; Kersten, S.; Khomich, A.; Klingenberg, R.; Kodys, P.; Koffas, T.; Konstantinidis, N.; Kostyukhin, V.; Lacasta, C.; Lari, T.; Latorre, S.; Lester, C.G.; Liebig, W.; Lipniacka, A.; Lourerio, K.F.; Mangin-Brinet, M.; Marti i Garcia, S.; Mathes, M.; Meroni, C.; Mikulec, B.; Mindur, B.; Moed, S.; Moorhead, G.; Morettini, P.; Moyse, E.W.J.; Nakamura, K.; Nechaeva, P.; Nikolaev, K.; Parodi, F.; Parzhitskiy, S.; Pater, J.; Petti, R.; Phillips, P.W.; Pinto, B.; Poppleton, A.; Reeves, K.; Reisinger, I.; Reznicek, P.; Risso, P.; Robinson, D.; Roe, S.; Rozanov, A.; Salzburger, A.; Sandaker, H.; Santi, L.; Schiavi, C.; Schieck, J.; Schultes, J.; Sfyrla, A.; Shaw, C.; Tegenfeldt, F.; Timmermans, C.J.W.P.; Toczek, B.; Troncon, C.; Tyndel, M.; Vernocchi, F.; Virzi, J.; Anh, T. Vu; Warren, M.; Weber, J.; Weber, M.; Weidberg, A.R.; Weingarten, J.; Wellsf, P.S.; Zhelezkow, A.

2008-06-02

A small set of final prototypes of the ATLAS Inner Detector silicon tracking system(Pixel Detector and SemiConductor Tracker), were used to take data during the 2004 Combined Test Beam. Data were collected from runs with beams of different flavour (electrons, pions, muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent methods were used to align the silicon modules. The corrections obtained were validated using the known momenta of the beam particles and were shown to yield consistent results among the different alignment approaches. From the residual distributions, it is concluded that the precision attained in the alignmentof the silicon modules is of the order of 5 mm in their most precise coordinate.

Structuring of silicon with low energy focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

The defect production in silicon induced by focused ion beam irradiation as a function of energy and projectile mass has been investigated and compared to the measured sputter yield. The aim was to find optimal beam parameters for the structuring of semiconductors with a minimum amount of defects produced per removed atom. (author) 2 figs., 2 refs.

Manufacturing and characterization of bent silicon crystals for studies of coherent interactions with negatively charged particles beams

Energy Technology Data Exchange (ETDEWEB)

Germogli, G.; Mazzolari, A.; Bandiera, L.; Bagli, E.; Guidi, V.

2015-07-15

Efficient steering of GeV-energy negatively charged particle beams was demonstrated to be possible with a new generation of thin bent silicon crystals. Suitable crystals were produced at the Sensor Semiconductor Laboratory of Ferrara starting from Silicon On Insulator wafers, adopting proper revisitation of silicon micromachining techniques such as Low Pressure Chemical Vapor Deposition, photolithography and anisotropic chemical etching. Mechanical holders, which allow to properly bend the crystal and to reduce unwanted torsions, were employed. Crystallographic directions and crystal holder design were optimized in order to excite quasi-mosaic effect along (1 1 1) planes. Prior to exposing the crystal to particle beams, a full set of characterizations were performed. Infrared interferometry was used to measure crystal thickness with high accuracy. White-light interferometry was employed to characterize surface deformational state and its torsion. High-resolution X-rays diffraction was used to precisely measure crystal bending angle along the beam. Manufactured crystals were installed and tested at the MAMI MAinz MIcrotron to steer sub-GeV electrons, and at SLAC to deflect an electron beam in the 1 to 10 GeV energy range.

Study on Size-Dependent Young’s Modulus of a Silicon Nano beam by Molecular Dynamics Simulation

International Nuclear Information System (INIS)

Yu, H.; Sun, C.; Zhang, W.W.; Lei, S.Y.; Huang, K.A.

2013-01-01

Young’s modulus of a silicon nano beam with a rectangular cross-section is studied by molecular dynamics method. Dynamic simulations are performed for doubly clamped silicon nano beams with lengths ranging from 4.888 to 12.491 nm and cross-sections ranging from 1.22 nm ×1.22 nm to 3.39 nm × 3.39 nm. The results show that Young’s moduli of such small silicon nano beams are much higher than the value of Young’s modulus for bulk silicon. Moreover, the resonant frequency and Young’s modulus of the Si nano beam are strongly dependent not only on the size of the nano beam but also on surface effects. Young’s modulus increases significantly with the decreasing of the thickness of the silicon nano beam. This result qualitatively agrees with one of the conclusions based on a semi continuum model, in which the surface relaxation and the surface tension were taken into consideration. The impacts of the surface reconstruction with (2 ×1) dimmers on the resonant frequency and Young’s modulus are studied in this paper too. It is shown that the surface reconstruction makes the silicon nano beam stiffer than the one without the surface reconstruction, resulting in a higher resonant frequency and a larger Young’s modulus

Silicon photo-multiplier radiation hardness tests with a beam controlled neutron source

International Nuclear Information System (INIS)

Angelone, M.; Pillon, M.; Faccini, R.; Pinci, D.; Baldini, W.; Calabrese, R.; Cibinetto, G.; Cotta Ramusino, A.; Malaguti, R.; Pozzati, M.

2010-01-01

Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7x10 10 1-MeV-equivalent neutrons per cm 2 . Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10 8 1-MeV-equivalent neutrons per cm 2 was reached.

Liquid gallium cooling of silicon crystals in high intensity photon beams

International Nuclear Information System (INIS)

Smither, R.K.; Forster, G.A.; Bilderback, D.H.; Bedzyk, M.; Finkelstein, K.; Henderson, C.; White, J.; Berman, L.E.; Stefan, P.; Oversluizen, T.

1989-01-01

The high-brilliance, insertion-device-based photon beams of the next generation of synchrotron sources (Argonne's APS and Grenoble's ESRF) will deliver large thermal loads (1--10 kW) to the first optical elements. Considering the problems that present synchrotron users are experiencing with beams from recently installed insertion devices, new and improved methods of cooling these first optical elements, particularly when they are diffraction crystals, are clearly needed. A series of finite element calculations were performed to test the efficiency of new cooling geometries and various cooling fluids. The best results were obtained with liquid Ga metal flowing in channels just below the surface of the crystal. Ga was selected because of its good thermal conductivity and thermal capacity, low melting point, high boiling point, low kinetic viscosity, and very low vapor pressure. Its very low vapor pressure, even at elevated temperatures, makes it especially attractive in UHV conditions. A series of experiments were conducted at CHESS in February of 1988 that compared liquid gallium-cooled silicon diffraction crystals with water-cooled crystals. A six-pole wiggler beam was used to perform these tests on three different Si crystals, two with new cooling geometries and the one presently in use. A special high-pressure electromagnetic induction pump, recently developed at Argonne, was used to circulate the liquid gallium through the silicon crystals. In all experiments, the specially cooled crystal was used as the first crystal in a two crystal monochromator. An infrared camera was used to monitor the thermal profiles and correlated them with rocking curve measurements. A second set of cooling experiments were conducted in June of 1988 that used the intense, highly collimated beam from the newly installed ANL/CHESS undulator

Charging effects during focused electron beam induced deposition of silicon oxide

NARCIS (Netherlands)

de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

2011-01-01

This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

Science.gov (United States)

Kurfürst, C.; Dehning, B.; Sapinski, M.; Bartosik, M. R.; Eisel, T.; Fabjan, C.; Rementeria, C. A.; Griesmayer, E.; Eremin, V.; Verbitskaya, E.; Zabrodskii, A.; Fadeeva, N.; Tuboltsev, Y.; Eremin, I.; Egorov, N.; Härkönen, J.; Luukka, P.; Tuominen, E.

2015-05-01

As a result of the foreseen increase in the luminosity of the Large Hadron Collider, the discrimination between the collision products and possible magnet quench-provoking beam losses of the primary proton beams is becoming more critical for safe accelerator operation. We report the results of ongoing research efforts targeting the upgrading of the monitoring system by exploiting Beam Loss Monitor detectors based on semiconductors located as close as possible to the superconducting coils of the triplet magnets. In practice, this means that the detectors will have to be immersed in superfluid helium inside the cold mass and operate at 1.9 K. Additionally, the monitoring system is expected to survive 20 years of LHC operation, resulting in an estimated radiation fluence of 1×1016 proton/cm2, which corresponds to a dose of about 2 MGy. In this study, we monitored the signal degradation during the in situ irradiation when silicon and single-crystal diamond detectors were situated in the liquid/superfluid helium and the dependences of the collected charge on fluence and bias voltage were obtained. It is shown that diamond and silicon detectors can operate at 1.9 K after 1×1016 p/cm2 irradiation required for application as BLMs, while the rate of the signal degradation was larger in silicon detectors than in the diamond ones. For Si detectors this rate was controlled mainly by the operational mode, being larger at forward bias voltage.

Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

Science.gov (United States)

Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

2016-03-21

Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

Ion beam induces nitridation of silicon

International Nuclear Information System (INIS)

Petravic, M.; Williams, J.S.; Conway, M.

1998-01-01

High dose ion bombardment of silicon with reactive species, such as oxygen and nitrogen, has attracted considerable interest due to possible applications of beam-induced chemical compounds with silicon. For example, high energy oxygen bombardment of Si is now routinely used to form buried oxide layers for device purposes, the so called SIMOX structures. On the other hand, Si nitrides, formed by low energy ( 100 keV) nitrogen beam bombardment of Si, are attractive as oxidation barriers or gate insulators, primarily due to the low diffusivity of many species in Si nitrides. However, little data exists on silicon nitride formation during bombardment and its angle dependence, in particular for N 2 + bombardment in the 10 keV range, which is of interest for analytical techniques such as SIMS. In SIMS, low energy oxygen ions are more commonly used as bombarding species, as oxygen provides stable ion yields and enhances the positive secondary ion yield. Therefore, a large body of data can be found in the literature on oxide formation during low energy oxygen bombardment. Nitrogen bombardment of Si may cause similar effects to oxygen bombardment, as nitrogen and oxygen have similar masses and ranges in Si, show similar sputtering effects and both have the ability to form chemical compounds with Si. In this work we explore this possibility in some detail. We compare oxide and nitride formation during oxygen and nitrogen ion bombardment of Si under similar conditions. Despite the expected similar behaviour, some large differences in compound formation were found. These differences are explained in terms of different atomic diffusivities in oxides and nitrides, film structural differences and thermodynamic properties. (author)

Bright luminance from silicon dioxide film with carbon nanotube electron beam exposure

Energy Technology Data Exchange (ETDEWEB)

Lee, Su Woong; Hong, Ji Hwan; Kang, Jung Su; Callixte, Shikili; Park, Kyu Chang, E-mail: kyupark@khu.ac.kr

2016-02-15

We observed the bright bluish-white luminescence with naked eye from carbon nanotube electron beam exposed silicon dioxide (SiO{sub 2}) thin film on Si substrate. The luminescence shows a peak intensity at 2.7 eV (460 nm) with wide spread up to 600 nm after the C-beam exposed on SiO{sub 2} thin film. The C-beam exposure system is composed of carbon nanotube emitters as electron beam source. The brightness strongly depend on the exposure condition. Luminescence characteristic was optimized by C-beam adjustment to observe with the naked eye. The cause of luminescence in the C-beam exposed SiO{sub 2} thin film is analyzed by CL microscopy, FT-IR, AFM and ellipsometer. Decrease of Si–O bonding was observed after C-beam exposure, and this reveals that oxygen deficient defects which are irradiation-sensitive cause 2.7 eV peak of luminescence. - Highlights: • We observed bright luminescence for SiO{sub 2} thin film with naked eye by carbon nanotube electron beam (C-beam) exposure technique. • The bright luminance from C-beam exposed SiO{sub 2} film will open novel silicon optoelectronics.

Radiation monitoring and beam dump system of the OPAL silicon microvertex detector

CERN Document Server

Braibant, S

1997-01-01

The OPAL microvertex silicon detector radiation monitoring and beam dump system is described. This system was designed and implemented in order to measure the radiation dose received at every beam crossing and to induce a fast beam dump if the radiation dose exceeds a given threshold.

Laser-beam-induced current mapping evaluation of porous silicon-based passivation in polycrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Rabha, M. Ben; Bessais, B. [Laboratoire de Nanomateriaux et des Systemes pour l' Energie, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia); Dimassi, W.; Bouaicha, M.; Ezzaouia, H. [Laboratoire de photovoltaique, des semiconducteurs et des nanostructures, Centre de Recherches et des Technologies de l' Energie - Technopole de Borj-Cedria BP 95, 2050 Hammam-Lif (Tunisia)

2009-05-15

In the present work, we report on the effect of introducing a superficial porous silicon (PS) layer on the performance of polycrystalline silicon (pc-Si) solar cells. Laser-beam-induced current (LBIC) mapping shows that the PS treatment on the emitter of pc-Si solar cells improves their quantum response and reduce the grain boundaries (GBs) activity. After the porous silicon treatment, mapping investigation shows an enhancement of the LBIC and the internal quantum efficiency (IQE), due to an improvement of the minority carrier diffusion length and the passivation of recombination centers at the GBs as compared to the reference substrate. It was quantitatively shown that porous silicon treatment can passivate both the grains and GBs. (author)

Depth profiling of boron implanted silicon by positron beam

International Nuclear Information System (INIS)

Oevuenc, S.

2004-01-01

Positron depth profiling analyses of low energy implants of silicon aim to observe tbe structure and density of the vacancies generating by implantation and the effect of annealing. This work present the results to several set of data starting S and W parameters. Boron implanted Silicon samples with different implantation energies,20,22,24,and 26 keV are analyzed by Slow positron beam (0-40 keV and 10 5 e + /s )(Variable Energy Positron) at the Positron Centre Delf-HOLLAND

Design of a synchrotron radiation detector for the test beam lines at the Superconducting Super Collider Laboratory

International Nuclear Information System (INIS)

Hutton, R.D.

1994-01-01

As part of the particle- and momentum-tagging instrumentation required for the test beam lines of the Superconducting Super Collider (SSC), the synchrotron radiation detector (SRD) was designed to provide electron tagging at momentum above 75 GeV. In a parallel effort to the three test beam lines at the SSC, schedule demands required testing and calibration operations to be initiated at Fermilab. Synchrotron radiation detectors also were to be installed in the NM and MW beam lines at Femilab before the test beam lines at the SSC would become operational. The SRD is the last instrument in a series of three used in the SSC test beam fines. It follows a 20-m drift section of beam tube downstream of the last silicon strip detector. A bending dipole just in of the last silicon strip detector produces the synchrotron radiation that is detected in a 50-mm-square cross section NaI crystal. A secondary scintillator made of Bicron BC-400 plastic is used to discriminate whether it is synchrotron radiation or a stray particle that causes the triggering of the NaI crystal's photo multiplier tube (PMT)

Heavy ion beam test results of the silicon charge detector for the CREAM cosmic ray balloon mission

International Nuclear Information System (INIS)

Park, I.H.; Ahn, H.S.; Bok, J.B.; Ganel, O.; Hahn, J.H.; Han, W.; Hyun, H.J.; Kim, H.J.; Kim, M.Y.; Kim, Y.J.; Lee, J.K.; Lee, M.H.; Lutz, L.; Min, K.W.; Malinine, A.; Nam, S.W.; Nam, W.; Park, H.; Park, N.H.; Seo, E.S.; Seon, K.I.; Sone, J.H.; Yang, J.; Zinn, S.Y.

2004-01-01

The Cosmic Ray Energetics And Mass (CREAM) experiment is designed to measure cosmic ray elemental spectra to help understand the source and acceleration mechanisms of ultra-high-energy cosmic rays. The payload is planned to launch in December 2004 from McMurdo Station, Antarctica as a balloon mission. A Silicon Charge Detector (SCD) was designed and constructed for the CREAM experiment to provide precision charge measurements of incident cosmic rays with a resolution of 0.2 charge unit or better. The SCD was exposed to heavy ion beams at CERN's H2 beam line in November 2003. The results reported here show the SCD performs as designed

Heavy ion beam test results of the silicon charge detector for the CREAM cosmic ray balloon mission

CERN Document Server

Park, I H; Bok, J B; Ganel, O; Hahn, J H; Han, W; Hyun, H J; Kim, H J; Kim, M Y; Kim, Y J; Lee, J K; Lutz, L; Malinine, A; Min, K W; Nam, S W; Nam, W; Park, H; Park, N H; Seo, E S; Seon, K I; Sone, J H; Yang, J; Zinn, S Y

2004-01-01

The Cosmic Ray Energetics And Mass (CREAM) experiment is designed to measure cosmic ray elemental spectra to help understand the source and acceleration mechanisms of ultra-high-energy cosmic rays. The payload is planned to launch in December 2004 from McMurdo Station, Antarctica as a balloon mission. A Silicon Charge Detector (SCD) was designed and constructed for the CREAM experiment to provide precision charge measurements of incident cosmic rays with a resolution of 0.2 charge unit or better. The SCD was exposed to heavy ion beams at CERN's H2 beam line in November 2003. The results reported here show the SCD performs as designed.

Ion beam figuring of CVD silicon carbide mirrors

Science.gov (United States)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

Formation of aluminum films on silicon by ion beam deposition: a comparison with ionized cluster beam deposition

International Nuclear Information System (INIS)

Zuhr, R.A.; Haynes, T.E.; Galloway, M.D.; Tanaka, S.; Yamada, A.; Yamada, I.

1991-01-01

The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically analyzed ion beam to low energies (10-200 eV) for direct deposition onto the substrate under UHV conditions. The aluminum-on-silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. This technique has produced intriguing results for aluminum, with oriented crystalline films being formed at room temperature in spite of the 25% mismatch in lattice constant between aluminum and silicon. In this work, we have studied the formation of such films by IBD, with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40 to 300degC and with ion energies of 30-120 eV per ion. Completed films were analyzed by ion scattering, X-ray diffraction, scanning-electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are comparable to those for similar films grown by ICB deposition. (orig.)

Beam loss studies on silicon strip detector modules for the CMS experiment

CERN Document Server

Fahrer, Manuel

2006-01-01

The large beam energy of the LHC demands for a save beam abort system. Nevertheless, failures cannot be excluded with last assurance and are predicted to occur once per year. As the CMS experiment is placed in the neighboured LHC octant, it is affected by such events. The effect of an unsynchronized beam abort on the silicon strip modules of the CMS tracking detector has been investigated in this thesis by performing one accelerator and two lab experiments. The dynamical behaviour of operational parameters of modules and components has been recorded during simulated beam loss events to be able to disentangle the reasons of possible damages. The first study with high intensive proton bunches at the CERN PS ensured the robustness of the module design against beam losses. A further lab experiment with pulsed IR LEDs clarified the physical and electrical processes during such events. The silicon strip sensors on a module are protected against beam losses by a part of the module design that originally has not been...

Modeling silicon diode energy response factors for use in therapeutic photon beams.

Science.gov (United States)

Eklund, Karin; Ahnesjö, Anders

2009-10-21

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Modeling silicon diode energy response factors for use in therapeutic photon beams

International Nuclear Information System (INIS)

Eklund, Karin; Ahnesjoe, Anders

2009-01-01

Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm 2 , 10 x 10 cm 2 and 20 x 20 cm 2 fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

Silicon drift detectors in alice experiment at lhc, performance tests and simulations

International Nuclear Information System (INIS)

ALICE collaboration

2001-01-01

A brief introduction to the silicon drift detector (SDD) in ALICE experiment at LHC CERN. Excellent agreement are found between the results from the simulation code (Ali Root) and the results of the test beam data for SDD s. A study of SDD performance and double track separation capability are shown

Superconductive silicon nanowires using gallium beam lithography.

Energy Technology Data Exchange (ETDEWEB)

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Construction, Test And Calibration of the GLAST Silicon Tracker

Energy Technology Data Exchange (ETDEWEB)

Sgro, C.; Atwood, W.B.; Baldini, L.; Barbiellini, G.; Bellazzini, R.; Belli, F.; Bonamente, E.; Borden, T.; Bregeon, J.; Brez, A.; Brigida, M.; Caliandro, G.A.; Cecchi, C.; Cohen-Tanugi, J.; De Angelis, A.; Drell, P.; Favuzzi, C.; Fukazawa, Y.; Fusco, P.; Gargano, F.; Germani, S.; /INFN, Pisa /Pisa U. /UC, Santa Cruz /INFN, Trieste /Rome U.,Tor Vergata /SLAC /INFN, Bari /Bari U. /INFN, Perugia /Perugia U. /Udine U. /Hiroshima U. /Maryland U., JCA /Tokyo Inst. Tech. /JAXA, Sagamihara /INFN, Padua /Padua U. /Pisa, Scuola Normale Superiore /NASA, Goddard

2009-06-05

The Gamma-ray Large Area Space Telescope represents a great advance in space application of silicon detectors. With a surface of 80 m{sup 2} and about 1 M readout channels it is the largest silicon tracker ever built for a space experiment. GLAST is an astro-particle mission that will study the mostly unexplored, high energy (20 MeV-300 GeV) spectrum coming from active sources or diffused in the Universe. The detector integration and test phase is complete. The full instrument underwent environmental testing and the spacecraft integration phase has just started: the launch is foreseen in late 2007. In the meanwhile the spare modules are being used for instrument calibration and performance verification employing the CERN accelerator complex. A Calibration Unit has been exposed to photon, electron and hadron beams from a few GeV up to 300 GeV. We report on the status of the instrument and on the calibration campaign.

Charge reconstruction of the DAMPE Silicon-Tungsten Tracker: A preliminary study with ion beams

Science.gov (United States)

Qiao, Rui; Peng, Wen-Xi; Guo, Dong-Ya; Zhao, Hao; Wang, Huan-Yu; Gong, Ke; Zhang, Fei; Wu, Xin; Azzarello, Phillip; Tykhonov, Andrii; Asfandiyarov, Ruslan; Gallo, Valentina; Ambrosi, Giovanni

2018-04-01

The DArk Matter Particle Explorer (DAMPE) is one of the four satellites within Strategic Pioneer Research Program in Space Science of the Chinese Academy of Science (CAS). DAMPE can detect electrons, photons in a wide energy range (5 GeV to 10 TeV) and ions up to iron (100 GeV to 100 TeV). The silicon-Tungsten Tracker (STK) is one of the four subdetectors in DAMPE, providing photon-electron conversion, track reconstruction and charge identification for ions. An ion beam test was carried out in CERN with 60 GeV/u Lead primary beams. Charge reconstruction and charge resolution of the STK detectors were investigated.

arXiv Charge reconstruction study of the DAMPE Silicon-Tungsten Tracker with ion beams

CERN Document Server

Qiao, Rui; Guo, Dong-Ya; Zhao, Hao; Wang, Huan-Yu; Gong, Ke; Zhang, Fei; Wu, Xin; Azzarello, Phillip; Tykhonov, Andrii; Asfandiyarov, Ruslan; Gallo, Valentina; Ambrosi, Giovanni; Mazziotta, Nicola; De Mitri, Ivan

The DArk Matter Particle Explorer (DAMPE) is one of the four satellites within Strategic Pioneer Research Program in Space Science of the Chinese Academy of Science (CAS). DAMPE can detect electrons, photons in a wide energy range (5 GeV to 10 TeV) and ions up to iron (100GeV to 100 TeV). Silicon-Tungsten Tracker (STK) is one of the four subdetectors in DAMPE, providing photon-electron conversion, track reconstruction and charge identification for ions. Ion beam test was carried out in CERN with 60GeV/u Lead primary beams. Charge reconstruction and charge resolution of STK detectors were investigated.

Comparison between electron-beam and chemical crosslinking of silicone rubber

Energy Technology Data Exchange (ETDEWEB)

Frounchi, Masoud [Polymer Engineering Group, Department of Chemical and Petroleum Engineering, Sharif University of Technology, Azadi Ave, Tehran (Iran, Islamic Republic of)]. E-mail: frounchi@sharif.edu; Dadbin, Susan [Yazd Processing Center, Atomic Energy Organization of Iran, Tehran (Iran, Islamic Republic of); Panahinia, Farhad [Polymer Engineering Group, Department of Chemical and Petroleum Engineering, Sharif University of Technology, Azadi Ave, Tehran (Iran, Islamic Republic of)

2006-02-15

Silicone rubber (SR) was irradiated by electron beam over a dose range of 50-300 kGy in the absence of chemical reagents. Molecular weight between crosslinks (M {sub c}) in the network of SB was determined by two methods of solvent swelling and modulus of elasticity. The network structure of the elastomer crosslinked by electron beam irradiation and chemical vulcanization was compared. Mechanical tests were performed to determine shore hardness, tensile elongation, strength and modulus of the samples. It was found that SR is effectively crosslinked by electron beam irradiation. The tensile strength, hardness, modulus and elongation of irradiated SR were higher than peroxide-crosslinked SR. The optimum dose for the neat rubber was 150 kGy which reduced to 50 kGy with addition of 10 wt.% fumed silica. The synergistic effect of fumed silica was verified by M {sub c} measurements which showed a dramatic decrease in presence of fumed silica in the rubber. The synergism in properties was also verified by comparing the modulus values calculated from the Guth-Smallwood equation and experimental data. Absence of chemical reagents in irradiated SR samples makes them a proper choice for medical applications.

Investigation of the silicon ion density during molecular beam epitaxy growth

CERN Document Server

Eifler, G; Ashurov, K; Morozov, S

2002-01-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate betw...

High resolution silicon detectors for colliding beam physics

International Nuclear Information System (INIS)

Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bottigli, U.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Raso, G.; Ristori, L.; Scribano, A.; Stefanini, A.; Tenchini, R.; Tonelli, G.; Triggiani, G.

1984-01-01

Resolution and linearity of the position measurement of Pisa multi-electrode silicon detectors are presented. The detectors are operated in slightly underdepleted mode and take advantage of their intrinsic resistivity for resistive charge partition between adjacent strips. 22 μm resolution is achieved with readout lines spaced 300 μm. Possible applications in colliding beam experiments for the detection of secondary vertices are discussed. (orig.)

Compact high-efficiency vortex beam emitter based on a silicon photonics micro-ring

DEFF Research Database (Denmark)

Li, Shimao; Ding, Yunhong; Guan, Xiaowei

2018-01-01

Photonic integrated devices that emit vortex beam carrying orbital angular momentum are becoming key components for multiple applications. Here we propose and demonstrate a high-efficiency vortex beam emitter based on a silicon micro-ring resonator integrated with a metal mirror. Such a compact...

Tests of a silicon wafer based neutron collimator

International Nuclear Information System (INIS)

Cussen, L.D.; Vale, C.J.; Anderson, I.S.; Hoeghoj, P.

2001-01-01

A Soller slit neutron collimator has been prepared by stacking 160 μm thick single crystal silicon wafers coated on one surface with 4 μm of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators

Tests of a silicon wafer based neutron collimator

CERN Document Server

Cussen, L D; Anderson, I S; Hoeghoj, P

2001-01-01

A Soller slit neutron collimator has been prepared by stacking 160 mu m thick single crystal silicon wafers coated on one surface with 4 mu m of gadolinium metal. The collimator has an angular width of 20 min full width at half maximum and an effective length of 2.75 cm. The collimator has beam dimensions of 1 cm wide by 5.3 cm high. Tests at neutron wavelengths 7.5A and 1.8A showed a peak transmission of 88% within 2% of the optimum theoretical possibility. The background suppression in the wings is comparable with that of conventional neutron collimators.

Test of the CMS microstrip silicon tracker readout and control system

CERN Document Server

Zghiche, A

2001-01-01

The Microstrip Silicon tracker of the CMS detector is designed to provide robust particle tracking and vertex reconstruction within a strong magnetic field in the high luminosity environment of the LHC. The Tracker readout system employs Front-End Driver cards to digitize and buffer the analogue data arriving via optical links from on detector pipeline chips. The control chain of the front-end electronic is built to operate via optical fibers in order to shield the communications from the outside noise. Components close to the final design have been assembled to be tested in the X5 beam area at CERN where a dedicated 25 ns temporal structure beam has been made available by the SPS. This paper describes the hardware and the software developed for readout and control of data acquired by the front-end electronics operating at 40 MHz, Some preliminary results of the tests performed in the 25 ns beam are also given. (8 refs).

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Test beam results for an upgraded forward tagger of the L3 experiment at LEP II

International Nuclear Information System (INIS)

Chemarin, M.; Depasse, P.; Fay, J.; Felcini, M.; Fredj, L.; Ille, B.; Nessi-Tedaldi, F.; Susinno, G.F.

1994-01-01

We have tested new scintillator modules with silicon photodiode readout for the upgraded Active Lead Rings (ALR) of the L3 detector at LEP II. Results are presented from data recorded in muon and electron test beams with particular emphasis on the light production and collection as a function of the particle impact position on the scintillator modules. The results from the beam test data will be used for the design of the readout and trigger electronics in conjunction with the required ALR performance as an electron tagger and beam background monitor at LEP II. ((orig.))

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

Science.gov (United States)

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Irradiation and beam tests qualification for ATLAS IBL Pixel Modules

International Nuclear Information System (INIS)

Rubinskiy, Igor

2013-01-01

The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013–2014). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing Pixel Detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase in the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the Pixel Detector. An overview of the sensor technologies' qualification with particular emphasis on irradiation and beam tests is presented. -- Highlights: ► The ATLAS inner tracker will be extended with a so called Insertable B-Layer (IBL). ► The IBL modules are required to withstand irradiation up to 5×10 15 n eq /cm 2 . ► Two types of silicon pixel detector technologies (Planar and 3D) were tested in beam. ► The irradiated sensor efficiency exceeds 97% both with and without magnetic field. ► The leakage current, power dissipation, module active area ratio requirements are met.

Test Beam Coordination: 2003 ATLAS Combined Test Beam

CERN Multimedia

Di Girolamo, B.

The 2003 Test Beam Period The 2003 Test Beam period has been very fruitful for ATLAS. In spite of several days lost because of the accelerator problems, ATLAS has been able to achieve many results: FCAL has completed the calibration program in H6 Tilecal has completed the calibration program in H8 Pixel has performed extensive studies with normal and high intensity beams (up to 1.4*108 hadrons/spill) SCT has completed a variety of studies with quite a high number of modules operated concurrently TRT has performed several studies at high, low and very low energy (first use of the new H8 beam in the range 1 to 9 GeV) Muons (MDT,RPC and TGC) have been operating a large setup for about 5 months. The almost final MDT ROD (MROD) has been integrated in the readout and the final trigger electronics for TGC and RPC has been tested and certified with normal beam and during dedicated 40 MHz beam periods. The TDAQ has exploited a new generation prototype successfully and the new Event Filter infrastructure f...

3D-FBK Pixel sensors: recent beam tests results with irradiated devices

CERN Document Server

Micelli, A; Sandaker, H; Stugu, B; Barbero, M; Hugging, F; Karagounis, M; Kostyukhin, V; Kruger, H; Tsung, J W; Wermes, N; Capua, M; Fazio, S; Mastroberardino, A; Susinno, G; Gallrapp, C; Di Girolamo, B; Dobos, D; La Rosa, A; Pernegger, H; Roe, S; Slavicek, T; Pospisil, S; Jakobs, K; Kohler, M; Parzefall, U; Darbo, G; Gariano, G; Gemme, C; Rovani, A; Ruscino, E; Butter, C; Bates, R; Oshea, V; Parker, S; Cavalli-Sforza, M; Grinstein, S; Korokolov, I; Pradilla, C; Einsweiler, K; Garcia-Sciveres, M; Borri, M; Da Via, C; Freestone, J; Kolya, S; Lai, C H; Nellist, C; Pater, J; Thompson, R; Watts, S J; Hoeferkamp, M; Seidel, S; Bolle, E; Gjersdal, H; Sjobaek, K N; Stapnes, S; Rohne, O; Su, D; Young, C; Hansson, P; Grenier, P; Hasi, J; Kenney, C; Kocian, M; Jackson, P; Silverstein, D; Davetak, H; DeWilde, B; Tsybychev, D; Dalla Betta, G F; Gabos, P; Povoli, M; Cobal, M; Giordani, M P; Selmi, L; Cristofoli, A; Esseni, D; Palestri, P; Fleta, C; Lozano, M; Pellegrini, G; Boscardin, M; Bagolini, A; Piemonte, C; Ronchin, S; Zorzi, N; Hansen, T E; Hansen, T; Kok, A; Lietaer, N; Kalliopuska, J; Oja, A

2011-01-01

The Pixel detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider (LHC), and plays a key role in the reconstruction of the primary and secondary vertices of short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration (VLSI) and Micro-Electro-Mechanical-Systems (MEMS) where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradi...

Structural defects in laser- and electron-beam annealed silicon

International Nuclear Information System (INIS)

Narayan, J.

1979-01-01

Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

Investigation of the silicon ion density during molecular beam epitaxy growth

Science.gov (United States)

Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

2002-05-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

Comparison of proton microbeam and gamma irradiation for the radiation hardness testing of silicon PIN diodes

Science.gov (United States)

Jakšić, M.; Grilj, V.; Skukan, N.; Majer, M.; Jung, H. K.; Kim, J. Y.; Lee, N. H.

2013-09-01

Simple and cost-effective solutions using Si PIN diodes as detectors are presently utilized in various radiation-related applications in which excessive exposure to radiation degrades their charge transport properties. One of the conventional methods for the radiation hardness testing of such devices is time-consuming irradiation with electron beam or gamma-ray irradiation facilities, high-energy proton accelerators, or with neutrons from research reactors. Recently, for the purpose of radiation hardness testing, a much faster nuclear microprobe based approach utilizing proton irradiation has been developed. To compare the two different irradiation techniques, silicon PIN diodes have been irradiated with a Co-60 gamma radiation source and with a 6 MeV proton microbeam. The signal degradation in the silicon PIN diodes for both irradiation conditions has been probed by the IBIC (ion beam induced charge) technique, which can precisely monitor changes in charge collection efficiency. The results presented are reviewed on the basis of displacement damage calculations and NIEL (non-ionizing energy loss) concept.

Laser tests of silicon detectors

International Nuclear Information System (INIS)

Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

2007-01-01

This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

Development and Testing of the AMEGO Silicon Tracker System

Science.gov (United States)

Griffin, Sean; Amego Team

2018-01-01

The All-sky Medium Energy Gamma-ray Observatory (AMEGO) is a probe-class mission in consideration for the 2020 decadal review designed to operate at energies from ˜ 200 keV to > 10 GeV. Operating a detector in this energy regime is challenging due to the crossover in the interaction cross-section for Compton scattering and pair production. AMEGO is made of four major subsystems: a plastic anticoincidence detector for rejecting cosmic-ray events, a silicon tracker for measuring the energies of Compton scattered electrons and pair-production products, a CZT calorimeter for measuring the energy and location of Compton scattered photons, and a CsI calorimeter for measuring the energy of the pair-production products at high energies. The tracker comprises layers of dual-sided silicon strip detectors which provide energy and localization information for Compton scattering and pair-production events. A prototype tracker system is under development at GSFC; in this contribution we provide details on the verification, packaging, and testing of the prototype tracker, as well as present plans for the development of the front-end electronics, beam tests, and a balloon flight.

Test beam results of a depleted monolithic active pixel sensor (DMAPS) prototype

Energy Technology Data Exchange (ETDEWEB)

Obermann, Theresa; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Bonn Univ. (Germany); Schwenker, Benjamin [Goettingen Univ. (Germany); Collaboration: ATLAS Pixel-Collaboration

2016-07-01

New monolithic detector concepts are currently being explored for future particle physics experiments, in particular for the upgrade of the ATLAS detector. Common to monolithic pixel detectors is the integration of the front-end circuitry and the sensor on the same silicon substrate. The DMAPS concept makes use of high resistive silicon as substrate. It enables the application of a high bias voltage to create a drift field for the charge collection in the sensor part as well as the full usage of CMOS logic in the same piece of silicon. DMAPS prototypes from several foundries are available since three years and have been extensively characterized in the lab. In this talk, results of test beam campaigns, with neutron irradiated prototypes implemented in the ESPROS process, are presented.

Development of a beam test telescope based on the Alibava readout system

International Nuclear Information System (INIS)

Marco-Hernandez, R

2011-01-01

A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectronica (CNM) of Barcelona and Instituto de Fisica Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two Beetle ASICs for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two Beetle ASICs. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Development of a beam test telescope based on the Alibava readout system

Energy Technology Data Exchange (ETDEWEB)

Marco-Hernandez, R, E-mail: rmarco@ific.uv.es [Intituto de Fisica Corpuscular (CSIC-UV), Edificicio Institutos de Investigacion, PolIgono de La Coma, s/n. E-46980 Paterna (Valencia) (Spain)

2011-01-15

A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectronica (CNM) of Barcelona and Instituto de Fisica Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two Beetle ASICs for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two Beetle ASICs. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Development of a beam test telescope based on the Alibava readout system

Science.gov (United States)

Marco-Hernández, R.

2011-01-01

A telescope for a beam test have been developed as a result of a collaboration among the University of Liverpool, Centro Nacional de Microelectrónica (CNM) of Barcelona and Instituto de Física Corpuscular (IFIC) of Valencia. This system is intended to carry out both analogue charge collection and spatial resolution measurements with different types of microstrip or pixel silicon detectors in a beam test environment. The telescope has four XY measurement as well as trigger planes (XYT board) and it can accommodate up to twelve devices under test (DUT board). The DUT board uses two Beetle ASICs for the readout of chilled silicon detectors. The board could operate in a self-triggering mode. The board features a temperature sensor and it can be mounted on a rotary stage. A peltier element is used for cooling the DUT. Each XYT board measures the track space points using two silicon strip detectors connected to two Beetle ASICs. It can also trigger on the particle tracks in the beam test. The board includes a CPLD which allows for the synchronization of the trigger signal to a common clock frequency, delaying and implementing coincidence with other XYT boards. An Alibava mother board is used to read out and to control each XYT/DUT board from a common trigger signal and a common clock signal. The Alibava board has a TDC on board to have a time stamp of each trigger. The data collected by each Alibava board is sent to a master card by means of a local data/address bus following a custom digital protocol. The master board distributes the trigger, clock and reset signals. It also merges the data streams from up to sixteen Alibava boards. The board has also a test channel for testing in a standard mode a XYT or DUT board. This board is implemented with a Xilinx development board and a custom patch board. The master board is connected with the DAQ software via 100M Ethernet. Track based alignment software has also been developed for the data obtained with the DAQ software.

Beam Simulation Studies of Plasma-Surface Interactions in Fluorocarbon Etching of Silicon and Silicon Dioxide

Science.gov (United States)

Gray, David C.

1992-01-01

A molecular beam apparatus has been constructed which allows the synthesis of dominant species fluxes to a wafer surface during fluorocarbon plasma etching. These species include atomic F as the primary etchant, CF _2 as a potential polymer forming precursor, and Ar^{+} or CF _{rm x}^{+} type ions. Ionic and neutral fluxes employed are within an order of magnitude of those typical of fluorocarbon plasmas and are well characterized through the use of in -situ probes. Etching yields and product distributions have been measured through the use of in-situ laser interferometry and line-of-sight mass spectrometry. XPS studies of etched surfaces were performed to assess surface chemical bonding states and average surface stoichiometry. A useful design guide was developed which allows optimal design of straight -tube molecular beam dosers in the collisionally-opaque regime. Ion-enhanced surface reaction kinetics have been studied as a function of the independently variable fluxes of free radicals and ions, as well as ion energy and substrate temperature. We have investigated the role of Ar ^{+} ions in enhancing the chemistries of F and CF_2 separately, and in combination on undoped silicon and silicon dioxide surfaces. We have employed both reactive and inert ions in the energy range most relevant to plasma etching processes, 20-500 eV, through the use of Kaufman and ECR type ion sources. The effect of increasing ion energy on the etching of fluorine saturated silicon and silicon dioxide surfaces was quantified through extensions of available low energy physical sputtering theory. Simple "site"-occupation models were developed for the quantification of the ion-enhanced fluorine etching kinetics in these systems. These models are suitable for use in topography evolution simulators (e.g. SAMPLE) for the predictive modeling of profile evolution in non-depositing fluorine-based plasmas such as NF_3 and SF_6. (Copies available exclusively from MIT Libraries, Rm. 14

Liquid gallium cooling of silicon crystals in high intensity photon beam

International Nuclear Information System (INIS)

Smither, R.K.; Forster, G.A.; Bilderback, D.H.

1988-11-01

The high-brilliance, insertion-device-based, photon beams of the next generation of synchrotron sources will deliver large thermal loads (1 kW to 10 kW) to the first optical elements. Considering the problems that present synchrotron users are experiencing with beams from recently installed insertion devices, new and improved methods of cooling these first optical elements, particularly when they are diffraction crystals, are clearly needed. A series of finite element calculations were performed to test the efficiency of new cooling geometries and new cooling fluids. The best results were obtained with liquid Ga metal flowing in channels just below the surface of the crystal. Ga was selected because of its good thermal conductivity and thermal capacity, low melting point, high boiling point, low kinetic viscosity, and very low vapor pressure. Its very low vapor pressure, even at elevated temperatures, makes it especially attractive in uhv conditions. A series of experiments were conducted at CHESS in February of 1988 that compared liquid gallium cooled silicon diffraction crystals with water cooled crystals. 2 refs., 16 figs., 1 tab

Operation of the CDF Silicon Vertex Detector with colliding beams at Fermilab

International Nuclear Information System (INIS)

Bedeschi, F.; Bolognesi, V.; Dell'Agnello, S.; Galeotti, S.; Grieco, G.; Mariotti, M.; Menzione, A.; Punzi, G.; Raffaelli, F.; Ristori, L.; Tartarelli, F.; Turini, N.; Wenzel, H.; Zetti, F.; Bailey, M.W.; Garfinkel, A.F.; Kruse, M.C.; Shaw, N.M.; Carithers, W.C.; Ely, R.; Haber, C.; Holland, S.; Kleinfelder, S.; Merrick, T.; Schneider, O.; Wester, W.; Wong, M.; Yao, W.; Carter, H.; Flaugher, B.; Nelson, C.; Segler, S.; Shaw, T.; Tkaczyk, S.; Turner, K.; Wesson, T.R.; Barnett, B.; Boswell, C.; Skarha, J.; Snider, F.D.; Spies, A.; Tseng, J.; Vejcik, S.; Amidei, D.; Derwent, P.F.; Song, T.Y.; Dunn, A.; Gold, M.; Matthews, J.; Bacchetta, N.; Azzi, P.; Bisello, D.; Busetto, G.; Castro, A.; Loreti, M.; Pescara, L.; Tipton, P.; Watts, G.

1992-10-01

In this paper we briefly describe the main features of the CDF Silicon Vertex Detector (SVX) and discuss its performance during actual colliding beam operation at the Fermilab Tevatron. Details on S/N ratio, alignment, resolution and efficiency are given

Analyses of test beam data for the ATLAS upgrade readout chip (ABC130)

Energy Technology Data Exchange (ETDEWEB)

Peschke, Richard [DESY, Hamburg (Germany); Collaboration: ATLAS-Collaboration

2015-07-01

As part of the ATLAS phase II upgrade it is planned to replace the current tracker with an all silicon tracker. The outer part of the new tracker will consist of silicon strip detectors. For the readout of the strip detector a new Analog to Binary Converter chip (ABC130) was designed. The chip is processed in the 130 nm technology. In laboratory measurements the preamplifier of the new ABC130 showed a significant lower gain than expected. From the measurements in the laboratory it was not possible to distinguish if the malfunction is in the preamplifier or in the test circuit. Therefore an unbiased test was mandatory. Among other measurements, one was a test beam campaign at the Stanford Linear Accelerator Collider (SLAC). The result of measurement is shown in the presentation.

Stoichiometry of Silicon Dioxide Films Obtained by Ion-Beam Sputtering

Science.gov (United States)

Telesh, E. V.; Dostanko, A. P.; Gurevich, O. V.

2018-03-01

The composition of SiOx films produced by ion-beam sputtering (IBS) of silicon and quartz targets were studied by infrared spectrometry. Films with thicknesses of 150-390 nm were formed on silicon substrates. It was found that increase in the partial pressure of oxygen in the working gas, increase in the temperature of the substrate, and the presence of a positive potential on the target during reactive IBS of silicon shifted the main absorption band νas into the high-frequency region and increased the composition index from 1.41 to 1.85. During IBS of a quartz target the stoichiometry of the films deteriorates with increase of the energy of the sputtering argon ions. This may be due to increase of the deposition rate. Increase in the current of the thermionic compensator, increase of the substrate temperature, and addition of oxygen led to the formation of SiOx films with improved stoichiometry.

Position sensitive silicon detectors inside the Tevatron collider

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1986-01-01

Four position sensitive silicon detectors have been tested inside the Tevatron beam pipe at Fermilab. The system is the prototype of the small angle silicon spectrometer designed to study primarily p-anti p elastic and diffractive cross-sections at the Collider of Fermilab (CDF). Particles in the beam halo during p-anti p storage tests were used to study the performance of the detectors. Efficiency, linearity of response and spatial resolution are shown. Measurements performed at different distances from the beam axis have shown that the detectors could be operated at 8.5 mm from the beam with low rates and no disturbance to the circulating beams. This distance corresponds to about 11 times the standard half-width of the local beam envelope. The behaviour of the detectors with the radiation dose has also been investigated. (orig.)

Specific features of doping with antimony during the ion-beam crystallization of silicon

Energy Technology Data Exchange (ETDEWEB)

Pashchenko, A. S., E-mail: as.pashchenko@gmail.com; Chebotarev, S. N.; Lunin, L. S. [Russian Academy of Sciences, Southern Scientific Center (Russian Federation); Irkha, V. A. [Special Engineering and Technology Department “Inversiya” Ltd. (Russian Federation)

2016-04-15

A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10{sup 18} cm{sup –3} are grown. It is shown that, as the evaporator temperature is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~10{sup 0} to ~10{sup –3}.

Analysis of test beam data of ALPIDE, the final Monolithic Active Pixel Sensor (MAPS) prototype for the ALICE ITS upgrade

CERN Document Server

Emriskova, Natalia

2017-01-01

The ALICE collaboration is currently preparing a major upgrade of its apparatus, planned for installation during the second long shutdown of the Large Hadron Collider in 2019-20. The main pillar of the upgrade is the replacement of the current Inner Tracking System (ITS) with a new, low-material, high resolution silicon pixel detector, made of Monolithic Active Pixel Sensors (MAPS). This technology, combining front-end circuitry and sensitive layer in a single device, will lead to a higher granularity of the detector and therefore a better pointing resolution. The silicon pixel chips, called ALPIDEs, developed specifically for the new ITS, are currently characterized using test beams. A part of this characterization is presented in this work. The project involves the very first analysis of test beam data with inclined tracks. The tested ALPIDE is rotated with respect to the beam, hence the particles cross the chip with an inclined incidence angle. The influence of these rotations on the efficiency profile...

Silicon-based photonic crystals fabricated using proton beam writing combined with electrochemical etching method.

Science.gov (United States)

Dang, Zhiya; Breese, Mark Bh; Recio-Sánchez, Gonzalo; Azimi, Sara; Song, Jiao; Liang, Haidong; Banas, Agnieszka; Torres-Costa, Vicente; Martín-Palma, Raúl José

2012-07-23

A method for fabrication of three-dimensional (3D) silicon nanostructures based on selective formation of porous silicon using ion beam irradiation of bulk p-type silicon followed by electrochemical etching is shown. It opens a route towards the fabrication of two-dimensional (2D) and 3D silicon-based photonic crystals with high flexibility and industrial compatibility. In this work, we present the fabrication of 2D photonic lattice and photonic slab structures and propose a process for the fabrication of 3D woodpile photonic crystals based on this approach. Simulated results of photonic band structures for the fabricated 2D photonic crystals show the presence of TE or TM gap in mid-infrared range.

Direct deposition of gold on silicon with focused ion beams

Energy Technology Data Exchange (ETDEWEB)

Nebiker, P.W.; Doebeli, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muehle, R. [Eidgenoessische Technische Hochschule, Zurich (Switzerland)

1997-09-01

Irradiation with ions at very low energies (below 500 eV) no longer induces a removal of substrate material, but the ions are directly deposited on the surface. In this way, gold has been deposited on silicon with focused ion beam exposure and the properties of the film have been investigated with atomic force microscopy and Auger electron spectroscopy. (author) 3 figs., 1 ref.

Ion-beam doping of amorphous silicon with germanium isovalent impurity

International Nuclear Information System (INIS)

Khokhlov, A.F.; Mashin, A.I.; Ershov, A.V.; Mashin, N.I.; Ignat'eva, E.A.

1988-01-01

Experimental data on ion-beam doping of amorphous silicon containing minor germanium additions by donor and acceptor impurity are presented. Doping of a-Si:Ge films as well as of a-Si layers was performed by implantation of 40 keV energy B + ions or 120 keV energy phosphorus by doses from 3.2x10 13 up to 1.3x10 17 cm -2 . Ion current density did not exceed 1 μA/cm 2 . Radiation defect annealing was performed at 400 deg C temperature during 30 min. Temperature dependences of conductivity in the region of 160-500 K were studied. It is shown that a-Si:Ge is like hydrogenized amorphous silicon in relation to doping

Measurement of Nuclear Interaction Rates in Crystal Using the CERN-SPS North Area Test Beams

CERN Document Server

Losito, R; Taratin, A

2010-01-01

A number of tests were performed in the North area of the SPS in view of investigating crystal-particles interactions for future application in hadron colliders. The rate of nuclear interactions was measured with 400 GeV proton beams directed into a silicon bent crystal. In this way the background induced by the crystal either in amorphous or in channeling orientation was revealed. The results provide fundamental information to put in perspective the use of silicon crystals to assist halo collimation in hadron colliders, whilst minimizing the induced loss.

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

Beam tests of prototype fiber detectors for the H1 forward proton spectrometer

International Nuclear Information System (INIS)

Baehr, J.; Hiller, K.; Hoffmann, B.; Luedecke, H.; Menchikov, A.; Nahnhauer, R.; Roloff, H.E.; Tonisch, F.; Voelkert, R.

1994-07-01

Different prototypes of fiber detectors with an internal trigger system were tested in a 5 GeV electron beam at DESY. A silicon microstrip telescope was used for an external reference measurement of the beam to study the spatial resolution of the fiber detectors. On average 75% of all crossing electron tracks could be reconstructed with a precision better than 150 μm. These successful methodical investigations led to the installation of similar detectors in the proton beamline 81 m downstream of the central H1-detector at HERA as part of a forward proton spectrometer in spring 1994. (orig.)

Beam tests of prototype fiber detectors for the H1 forward proton spectrometer

International Nuclear Information System (INIS)

Baehr, J.; Hiller, K.; Hoffmann, B.; Luedecke, H.; Menchikov, A.; Nahnhauer, R.; Roloff, H.E.; Tonisch, F.; Voelkert, R.

1995-01-01

Different prototypes of fiber detectors with an internal trigger system were tested in a 5 GeV electron beam at DESY. A silicon microstrip telescope was used for an external reference measurement of the beam to study the spatial resolution of the fiber detectors. On average 75% of all crossing electron tracks could be reconstructed with a precision better than 150 μm. These successful methodical investigations led to the installation of similar detectors in the proton beamline 81 m downstream of the central H1-detector at HERA as part of a forward proton spectrometer in spring 1994. (orig.)

High-Efficiency Volume Reflection of an Ultrarelativistic Proton Beam with a Bent Silicon Crystal

CERN Document Server

Scandale, Walter; Carnera, Alberto; Della Mea, Gianantonio; De Salvador, Davide; Milan, Riccardo; Vomiero, Alberto; Baricordi, Stefano; Dalpiaz, Pietro; Fiorini, Massimiliano; Guidi, Vincenzo; Martinelli,Giuliano; Mazzolari, Andrea; Milan, Emiliano; Ambrosi, Giovanni; Azzarello, Philipp; Battiston, Roberto; Bertucci, Bruna; Burger, William J; Ionica, Maria; Zuccon, Paolo; Cavoto, Gianluca; Santacesaria, Roberta; Valente, Paolo; Vallazza, Erik; Afonin, Alexander G; Baranov, Vladimir T; Chesnokov, Yury A; Kotov, Vladilen I; Maisheev, Vladimir A; Yaznin, Igor A; Afansiev, Sergey V; Kovalenko, Alexander D; Taratin, Alexander M; Denisov, Alexander S; Gavrikov, Yury A; Ivanov, Yuri M; Ivochkin, Vladimir G; Kosyanenko, Sergey V; Petrunin, Anatoli A; Skorobogatov, Vyacheslav V; Suvorov, Vsevolod M; Bolognini, Davide; Foggetta,Luca; Hasan, Said; Prest, Michela

2007-01-01

The volume reflection phenomenon was detected while investigating 400 GeV proton interactions with bent silicon crystals in the external beam H8 of the CERN Super Proton Synchrotron. Such a process was observed for a wide interval of crystal orientations relative to the beam axis, and its efficiency exceeds 95%, thereby surpassing any previously observed value. These observations suggest new perspectives for the manipulation of high-energy beams, e.g., for collimation and extraction in new-generation hadron colliders, such as the CERN Large Hadron Collider.

The assembly of the silicon tracker for the GLAST beam test engineering model

International Nuclear Information System (INIS)

Allport, P.; Atwood, E.; Atwood, W.; Beck, G.; Bhatnager, B.; Bloom, E.; Broeder, J.; Chen, V.; Clark, J.; Cotton, N.; Couto e Silva, E. do; Feerick, B.; Giebels, G.; Godfrey, G.; Handa, T.; Hernando, J.A.; Hirayama, M.; Johnson, R.P.; Kamae, T.; Kashiguine, S.; Kroeger, W.; Milbury, C.; Miller, W.; Millican, O.; Nikolaou, M.; Nordby, M.; Ohsugi, T.; Paliaga, G.; Ponslet, E.; Rowe, W.; Sadrozinski, H.F.-W.; Spencer, E.; Stromberg, S.; Swensen, E.; Takayuki, M.; Tournear, D.; Webster, A.; Winkler, G.; Yamamoto, K.; Yamamura, K.; Yoshida, S.

2001-01-01

The silicon tracker for the engineering model of the GLAST Large Area Telescope (LAT) to date represents the largest surface of silicon microstrip detectors assembled in a tracker (2.7 m 2 ). It demonstrates the feasibility of employing this technology for satellite based experiments, in which large effective areas and high reliability are required. This note gives an overview of the assembly of this silicon tracker and discusses in detail studies performed to track quality assurance: leakage current, mechanical alignment and production yields

The ATLAS inner detector semiconductor tracker (Si and GaAs strips): review of the 1995 beam tests at the CERN SPS H8 beamline

International Nuclear Information System (INIS)

Moorhead, G.F.

1995-01-01

This talk will consist of a brief review of the ATLAS Inner Detector (ID) Semiconductor Tracker (SCT) strip detector (both silicon and gallium arsenide) beam tests conducted at the ATLAS test beam facility at the CERN SPS H8 beamline. It will include a brief overview of the H8 facilities, the experimental layout of the SCT/Strip apparatus, the data acquisition system, some of the online software tools and the high precision silicon hodoscope and timing modules used. A very brief indication of some of the main varieties of detector systems tested and the measurements performed will be given. Throughout some emphasis will be placed on the contributions and-interests of members of the Melbourne group. (author)

Raman study of localized recrystallization of amorphous silicon induced by laser beam

KAUST Repository

Tabet, Nouar A.

2012-06-01

The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

Raman study of localized recrystallization of amorphous silicon induced by laser beam

KAUST Repository

Tabet, Nouar A.; Al-Sayoud, Abduljabar; Said, Seyed; Yang, Xiaoming; Yang, Yang; Syed, Ahad A.; Diallo, Elhadj; Wang, Zhihong; Wang, Xianbin; Johlin, Eric; Simmons, Christine; Buonassisi, Tonio

2012-01-01

The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter. © 2012 IEEE.

On the evening of June 15, 2008, ALICE physicists saw the first tracks at LHC during the first injection test in transfer line TI 2. The Silicon Pixel detector recorded muon tracks produced in the beam dump near Point 2 of the LHC.

CERN Multimedia

Manzari, Vito

2008-01-01

On the evening of June 15, 2008, ALICE physicists saw the first tracks at LHC during the first injection test in transfer line TI 2. The Silicon Pixel detector recorded muon tracks produced in the beam dump near Point 2 of the LHC

The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

Science.gov (United States)

Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

2017-10-01

Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

A probe station for testing silicon sensors

CERN Multimedia

Ulysse, Fichet

2017-01-01

A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

Limitations to laser machining of silicon using femtosecond micro-Bessel beams in the infrared

International Nuclear Information System (INIS)

Grojo, David; Mouskeftaras, Alexandros; Delaporte, Philippe; Lei, Shuting

2015-01-01

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 10 11  W cm −2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams

Formation of hexagonal silicon carbide by high energy ion beam irradiation on Si (1 0 0) substrate

International Nuclear Information System (INIS)

Bhuyan, H; Favre, M; Valderrama, E; Avaria, G; Chuaqui, H; Mitchell, I; Wyndham, E; Saavedra, R; Paulraj, M

2007-01-01

We report the investigation of high energy ion beam irradiation on Si (1 0 0) substrates at room temperature using a low energy plasma focus (PF) device operating in methane gas. The unexposed and ion exposed substrates were characterized by x-ray diffraction, scanning electron microscopy (SEM), photothermal beam deflection, energy-dispersive x-ray analysis and atomic force microscopy (AFM) and the results are reported. The interaction of the pulsed PF ion beams, with characteristic energy in the 60-450 keV range, with the Si surface, results in the formation of a surface layer of hexagonal silicon carbide. The SEM and AFM analyses indicate clear step bunching on the silicon carbide surface with an average step height of 50 nm and a terrace width of 800 nm

Compact wavelength-insensitive fabrication-tolerant silicon-on-insulator beam splitter.

Science.gov (United States)

Rasigade, Gilles; Le Roux, Xavier; Marris-Morini, Delphine; Cassan, Eric; Vivien, Laurent

2010-11-01

A star coupler-based beam splitter for rib waveguides is reported. A design method is presented and applied in the case of silicon-on-insulator rib waveguides. Experimental results are in good agreement with simulations. Excess loss lower than 1 dB is experimentally obtained for star coupler lengths from 0.5 to 1 μm. Output balance is better than 1 dB, which is the measurement accuracy, and broadband transmission is obtained over 90 nm.

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

Initial testing of a pixelated silicon detector prototype in proton therapy.

Science.gov (United States)

Wroe, Andrew J; McAuley, Grant; Teran, Anthony V; Wong, Jeannie; Petasecca, Marco; Lerch, Michael; Slater, James M; Rozenfeld, Anatoly B

2017-09-01

As technology continues to develop, external beam radiation therapy is being employed, with increased conformity, to treat smaller targets. As this occurs, the dosimetry methods and tools employed to quantify these fields for treatment also have to evolve to provide increased spatial resolution. The team at the University of Wollongong has developed a pixelated silicon detector prototype known as the dose magnifying glass (DMG) for real-time small-field metrology. This device has been tested in photon fields and IMRT. The purpose of this work was to conduct the initial performance tests with proton radiation, using beam energies and modulations typically associated with proton radiosurgery. Depth dose and lateral beam profiles were measured and compared with those collected using a PTW parallel-plate ionization chamber, a PTW proton-specific dosimetry diode, EBT3 Gafchromic film, and Monte Carlo simulations. Measurements of the depth dose profile yielded good agreement when compared with Monte Carlo, diode and ionization chamber. Bragg peak location was measured accurately by the DMG by scanning along the depth dose profile, and the relative response of the DMG at the center of modulation was within 2.5% of that for the PTW dosimetry diode for all energy and modulation combinations tested. Real-time beam profile measurements of a 5 mm 127 MeV proton beam also yielded FWHM and FW90 within ±1 channel (0.1 mm) of the Monte Carlo and EBT3 film data across all depths tested. The DMG tested here proved to be a useful device at measuring depth dose profiles in proton therapy with a stable response across the entire proton spread-out Bragg peak. In addition, the linear array of small sensitive volumes allowed for accurate point and high spatial resolution one-dimensional profile measurements of small radiation fields in real time to be completed with minimal impact from partial volume averaging. © 2017 The Authors. Journal of Applied Clinical Medical Physics published

Test beam results of the first CMS double-sided strip module prototypes using the CBC2 read-out chip

Energy Technology Data Exchange (ETDEWEB)

Harb, Ali, E-mail: ali.harb@desy.de; Mussgiller, Andreas; Hauk, Johannes

2017-02-11

The CMS Binary Chip (CBC) is a prototype version of the front-end read-out ASIC to be used in the silicon strip modules of the CMS outer tracking detector during the high luminosity phase of the LHC. The CBC is produced in 130 nm CMOS technology and bump-bonded to the hybrid of a double layer silicon strip module, the so-called 2S-p{sub T} module. It has 254 input channels and is designed to provide on-board trigger information to the first level trigger system of CMS, with the capability of cluster-width discrimination and high-p{sub T} track identification. In November 2013 the first 2S-p{sub T} module prototypes equipped with the CBC chips were put to test at the DESY-II test beam facility. Data were collected exploiting a beam of positrons with an energy ranging from 2 to 4 GeV. In this paper the test setup and the results are presented.

Silicon-on-insulator-based polarization-independent 1×3 broadband beam splitter with adiabatic coupling

Science.gov (United States)

Gong, Yuanhao; Liu, Lei; Chang, Limin; Li, Zhiyong; Tan, Manqing; Yu, Yude

2017-10-01

We propose and numerically simulate a polarization-independent 1×3 broadband beam splitter based on silicon-on-insulator (SOI) technology with adiabatic coupling. The designed structure is simulated by beam-propagation-method (BPM) and gets simulated transmission uniformity of three outputs better than 0.3dB for TE-polarization and 0.8dB for TM-polarization in a broadband of 180nm.

Collimation: a silicon solution

CERN Multimedia

2007-01-01

Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

Science.gov (United States)

Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

2017-04-03

We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

Polarized photons from a silicon crystal in a 31 GeV electron beam at the Serpukhov proton accelerator

International Nuclear Information System (INIS)

Frolov, A.M.; Maisheev, V.A.; Arakelyan, E.A.; Armaganyan, A.A.; Avakyan, R.O.; Bayatyan, G.L.; Grigoryan, N.K.; Kechechyan, A.O.; Knyazyan, S.G.; Margaryan, A.T.

1980-01-01

Tagged photons coherently emitted in a silicon crystal by the 31 GeV electron beam of intensity 4 x 10 4 ppp and beam pulse duration of up to 1.7 s have been obtained at the Serpukhov proton accelerator. The photon intensities were I approx. 10 -1 - 10 -2 γ/e - in five almost equal energy bins within the total range k = (8.2-24.2) GeV. The calculated linear polarizations were P approx. 50-20%, respectively. Narrow peaks in the radiation intensity were observed when varying the orientation of a silicon crystal which could not be explained. The method for the experimental alignment of a crystal in electron beams at the proton accelerator has been described. (orig.)

Commissioning of the LHCb Silicon Tracker using data from the LHC injection tests

CERN Document Server

Knecht, M; Blanc, F; Bettler, M-O; Conti, G; Fave, V; Frei, R; Gauvin, N; Haefeli, G; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Perrin, A; Potterat, C; Schneider, O; Tran, M; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Anderson, J; Buechler, A; Chiapolini, N; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Van Tilburg, J; Tobin, M; Vollhardt, A; Adeva, B; Fungueiri no Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Rodriguez Perez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2011-01-01

LHCb is a single-arm forward spectrometer dedicated to the study of the CP-violation and rare decays in the b-quark sector. An efficient and high precision tracking system is a key requirement of the experiment. The LHCb Silicon Tracker Project consists of two sub-detectors that make use of silicon micro-strip technology: the Tracker Turicensis located upstream of the spectrometer magnet and the Inner Tracker which covers the innermost part of the tracking stations after the magnet. In total an area of 12 m^2 is covered by silicon. In September 2008 and June 2009, injection tests from the SPS to the LHC were performed. Bunches of order 5x10^9 protons were dumped onto a beam stopper (TED) located upstream of LHCb. This produced a spray of ~10 GeV muons in the LHCb detector. Though the occupancy in this environment is relatively large, these TED runs have allowed a first space and time alignment of the tracking system. Results of these studies together and the overall detector performance obtained in the TED ru...

Development and operation of a novel PC-based high speed beam telescope for particle tracking using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Treis, J.

2002-08-01

A PC based high speed silicon microstrip beam telescope consisting of several independent modules is presented. Every module contains an AC-coupled double sided silicon microstrip sensor and a complete set of analog and digital signal processing electronics. A digital bus connects the modules with the DAQ PC. A trigger logic unit coordinates the operation of all modules of the telescope. The system architecture allows easy integration of any kind of device under test into the data acquisition chain. Signal digitization, pedestal correction, hit detection and zero suppression are done by hardware inside the modules, so that the amount of data per event is reduced by a factor of 80 compared to conventional readout systems. In combination with a two level data acquisition scheme, this allows event rates up to 7.6 kHz. This is a factor of 40 faster than conventional VME based beam telescopes while comparable analog performance is maintained achieving signal to noise ratios of up to 70:1. The telescope has been tested in the SPS testbeam at CERN. It has been adopted as the reference instrument for testbeam studies for the ATLAS pixel detector development. (orig.)

Commissioning and Performance of the LHCb Silicon Tracker

CERN Multimedia

van Tilburg, J; Buechler, A; Bursche , A; Chiapolini, N; Elsaesser, C; Hangartner, V; Salzmann, C; Steiner, S; Steinkamp, O; Staumann, U; Tobin, M; Vollhardt, A; Bay, A; Bettler, M O; Blanc, F; Bressieux, J; Conti, G; Fave, V; Frei, R; Gauvin, N; Gonzalez, R; Haefeli, G; Hicheur, A; Keune, A; Luisier, J; Muresan, R; Nakada, T; Needham, M; Nicolas, L; Knecht, M; Perrin, A; Potterat, C; Schneider, O; Tran, M; Aquines Gutierrez, O; Bauer, C; Britsch, M; Hofmann, W; Maciuc, F; Schmelling, M; Voss, H; Adeva, B; Esperante, D; Fungueiriño Pazos, J; Gallas, A; Pazos-Alvarez, A; Pérez-Trigo, E; Pló Casasús, M; Rogríguez Pérez, P; Saborido, J; Vázquez, P; Iakovenko, V; Okhrimenko, O; Pugatch, V

2010-01-01

The LHCb Silicon Tracker is a silicon micro-strip detector with a sensitive area of 12 m$^2$ and a total of 272k readout channels. The Silicon Tracker consists of two parts that use different detector modules. The detector installation was completed by early summer 2008 and the commissioning without beam has reached its finals stage, successfully overcoming most of the encountered problems. Currently, the detector has more than 99% of the channels fully functioning. Commissioning with particles has started using beam-induced events from the LHC injection tests in 2008 and 2009. These events allowed initial studies of the detector performance. Especially, the detector modules could be aligned with an accuracy of about 20 $\\mu$m. Furthermore, with the first beam collisions that took place end of 2009 we could further study the performance and improve the alignment of the detector.

Electrical Characterisation of electron beam exposure induced Defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

2016-01-01

The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

Fabrication of nanopores in multi-layered silicon-based membranes using focused electron beam induced etching with XeF_2 gas

International Nuclear Information System (INIS)

Liebes-Peer, Yael; Bandalo, Vedran; Sökmen, Ünsal; Tornow, Marc; Ashkenasy, Nurit

2016-01-01

The emergent technology of using nanopores for stochastic sensing of biomolecules introduces a demand for the development of simple fabrication methodologies of nanopores in solid state membranes. This process becomes particularly challenging when membranes of composite layer architecture are involved. To overcome this challenge we have employed a focused electron beam induced chemical etching process. We present here the fabrication of nanopores in silicon-on-insulator based membranes in a single step process. In this process, chemical etching of the membrane materials by XeF_2 gas is locally accelerated by an electron beam, resulting in local etching, with a top membrane oxide layer preventing delocalized etching of the silicon underneath. Nanopores with a funnel or conical, 3-dimensional (3D) shape can be fabricated, depending on the duration of exposure to XeF_2, and their diameter is dominated by the time of exposure to the electron beam. The demonstrated ability to form high-aspect ratio nanopores in comparably thick, multi-layered silicon based membranes allows for an easy integration into current silicon process technology and hence is attractive for implementation in biosensing lab-on-chip fabrication technologies. (author)

Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests

International Nuclear Information System (INIS)

Merle, B.; Goeken, M.

2011-01-01

A bulge test setup was used to determine the fracture toughness of amorphous low-pressure chemical vapor deposited (LPCVD) silicon nitride films with various thicknesses in the range 40-108 nm. A crack-like slit was milled in the center of each free-standing film with a focused ion beam, and the membrane was deformed in the bulge test until failure occurred. The fracture toughness K IC was calculated from the pre-crack length and the stress at failure. It is shown that the membrane is in a transition state between pure plane-stress and plane-strain which, however, had a negligible influence on the measurement of the fracture toughness, because of the high brittleness of silicon nitride and its low Young's modulus over yield strength ratio. The fracture toughness K IC was found to be constant at 6.3 ± 0.4 MPa m 1/2 over the whole thickness range studied, which compares well with bulk values. This means that the fracture toughness, like the Young's modulus, is a size-independent quantity for LPCVD silicon nitride. This presumably holds true for all amorphous brittle ceramic materials.

Methods of optimising ion beam induced charge collection of polycrystalline silicon photovoltaic cells

International Nuclear Information System (INIS)

Witham, L.C.G.; Jamieson, D.N.; Bardos, R.A.

1998-01-01

Ion Beam Induced Charge (IBIC) is a valuable method for the mapping of charge carrier transport and recombination in silicon solar cells. However performing IBIC analysis of polycrystalline silicon solar cells is problematic in a manner unlike previous uses of IBIC on silicon-based electronic devices. Typical solar cells have a surface area of several square centimeters and a p-n junction thickness of only few microns. This means the cell has a large junction capacitance in the many nanoFarads range which leads to a large amount of noise on the preamplifier inputs which typically swamps the transient IBIC signal. The normal method of improving the signal-to-noise (S/N) ratio by biasing the junction is impractical for these cells as the low-quality silicon used leads to a large leakage current across the device. We present several experimental techniques which improve the S/N ratio which when used together should make IBIC analysis of many low crystalline quality devices a viable and reliable procedure. (authors)

Depth control of a silicon structure fabricated by 100q keV Ar ion beam lithography

Energy Technology Data Exchange (ETDEWEB)

Kawasegi, Noritaka [Graduate School of Science and Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: kawasegi@eng.u-toyama.ac.jp; Morita, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: nmorita@eng.u-toyama.ac.jp; Yamada, Shigeru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: syamada@eng.u-toyama.ac.jp; Takano, Noboru [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: takano@eng.u-toyama.ac.jp; Oyama, Tatsuo [Department of Mechanical and Intellectual Systems Engineering, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)]. E-mail: ohyama@eng.u-toyama.ac.jp; Momota, Sadao [Department of Intelligent Mechanical Systems Engineering, Kochi University of Technology, 185 Tosayamada, Kami, Kochi 782-8502 (Japan)]. E-mail: momota.sadao@kochi-tech.ac.jp; Taniguchi, Jun [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: junt@te.noda.tus.ac.jp; Miyamoto, Iwao [Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510 (Japan)]. E-mail: iwao@te.noda.tus.ac.jp

2007-01-15

Ion beam lithography of a silicon surface using an Ar ion beam with an ion energy in the order of hundreds of keV is demonstrated in this study. A specially designed ion irradiation facility was employed that enabled generation and irradiation with a highly accelerated and highly charged Ar ion beam. An ion-beam-induced amorphous layer on a silicon substrate can be selectively etched in hydrofluoric acid, whereas, a non-irradiated area is scarcely etched and, consequently, a concave structure can be fabricated on the irradiated area. To control the depth of the structure, parameters for dependence of the depth on ion irradiation were investigated. As a result, the depth of irradiated area can be controlled by the ion energy that is adjusted by the acceleration voltage and the ion charge. In addition, the etch resistance of the irradiated area increases with an increase in ion energy due to the crystalline layer formed on the surface. Simulation results reveal that the depth is strongly related to the defect distribution induced by ion irradiation. These results indicate the potential use of this method for novel three-dimensional lithography.

Ion-beam mixing in silicon and germanium at low temperatures

International Nuclear Information System (INIS)

Clark, G.J.; Marwick, A.D.; Poker, D.B.

1982-01-01

Ion-beam mixing of thin marker layers in amorphous silicon and germanium was studied using irradiations with Xe ions at temperatures of 34k and 77k. The marker species, ion energies and doses were: in silicon, markers of Ge and Pt irradiated with 200-keV Xe up to 2.7x10 16 ions cm -2 ; and in germanium, markers of Al and Si bombarded with 295-keV Xe up to 1.63x10 16 ions cm -2 . In silicon, Pt markers were found to broaden at about the same rate at 34k and 77k; and the rate of broadening was similar to that found by other workers when expressed as an efficiency of mixing, i.e., when dependence on ion dose and deposited energy was factored out. However, a Ge marker irradiated at 34k did not broaden from its original thickness. In germanium, markers of both Al and Si were mixed by irradiation at 34k, but at 77k only the Al marker broadened; the Si marker did not. The broadening of the markers is ascribed to ballistic mixing, while the cases where no broadening occurred are explicable if diffusion by a defect mechanism transported displaced marker atoms back to traps near their original sites

Combined analyses of ion beam synthesized layers in porous silicon

International Nuclear Information System (INIS)

Ramos, A.R.; Silva, M.F. da; Silva, M.R. da; Soares, J.C.; Paszti, F.; Horvath, Z.E.; Vazsonyi, E.; Conde, O.

2001-01-01

High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers several μm thick were implanted with 170 KeV Cr + ions to fluences of 3x10'1 7 ions/cm 2 both at room temperature and 450 o C. Similar samples were implanted with 100 keV Co + ions to fluences of 2x10 17 ions/cm 2 at room temperature and 350 o C and 450 o C. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densities during implantation, but the underlying porous silicon remains intact. The layer structure as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing. (author)

Study of the thermal effect on silicon surface induced by ion beam from plasma focus device

Energy Technology Data Exchange (ETDEWEB)

Ahmad, Z., E-mail: pscientific5@aec.org.sy [Scientific Service Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Ahmad, M. [IBA Laboratory, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Chemistry Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic); Al-Hawat, Sh.; Akel, M. [Physics Department, Atomic Energy Commission of Syria, P.O. Box: 6091, Damascus (Syrian Arab Republic)

2017-04-01

Structural modifications in form of ripples and cracks are induced by nitrogen ions from plasma focus on silicon surface. The investigation of such structures reveals correlation between ripples and cracks formation in peripheral region of the melt spot. The reason of such correlation and structure formation is explained as result of thermal effect. Melting and resolidification of the center of irradiated area occur within one micro second of time. This is supported by a numerical simulation used to investigate the thermal effect induced by the plasma focus ion beams on the silicon surface. This simulation provides information about the temperature profile as well as the dynamic of the thermal propagation in depth and lateral directions. In accordance with the experimental observations, that ripples are formed in latter stage after the arrival of last ion, the simulation shows that the thermal relaxation takes place in few microseconds after the end of the ion beam arrival. Additionally, the dependency of thermal propagation and relaxation on the distance of the silicon surface from the anode is presented.

Ion beam analysis of thin films. Applications to porous silicon

International Nuclear Information System (INIS)

Ortega, C.; Grosman, A.; Morazzani, V.

1995-01-01

The aim of this paper is twofold: (1)- to present a summary of the fundamental interactions between ion beam (such as proton, deuteron or helium) of MeV energy and solids, interactions that are used in material analysis techniques such as Rutherford Backscattering Spectrometry (RBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA), and (2)- to illustrate the use of these techniques to determine the composition of the surface and outer microns of material. Some examples will be given concerning porous silicon layers. (authors). 38 refs., 25 figs., 3 tabs

A data acquisition system for silicon microstrip detectors

International Nuclear Information System (INIS)

Adriani, O.; Civinini, C.; D'Alessandro, R.; Meschini, M.; Pieri, M.; Castellini, G.

1998-01-01

Following initial work on the readout of the L3 silicon microvertex detector, the authors have developed a complete data acquisition system for silicon microstrip detectors for use both in their home institute and at the various test beam facilities at the CERN laboratory. The system uses extensive decoupling schemes allowing a fully floating connection to the detector. This feature has many advantages especially in the readout of the latest double-sided silicon microstrip detectors

Growth of Gold-assisted Gallium Arsenide Nanowires on Silicon Substrates via Molecular Beam Epitaxy

Directory of Open Access Journals (Sweden)

Ramon M. delos Santos

2008-06-01

Full Text Available Gallium arsenide nanowires were grown on silicon (100 substrates by what is called the vapor-liquid-solid (VLS growth mechanism using a molecular beam epitaxy (MBE system. Good quality nanowires with surface density of approximately 108 nanowires per square centimeter were produced by utilizing gold nanoparticles, with density of 1011 nanoparticles per square centimeter, as catalysts for nanowire growth. X-ray diffraction measurements, scanning electron microscopy, transmission electron microscopy and Raman spectroscopy revealed that the nanowires are epitaxially grown on the silicon substrates, are oriented along the [111] direction and have cubic zincblende structure.

Study of Silicon Microstrip Detector Properties for the LHCb Silicon Tracker

CERN Document Server

Lois-Gómez, C; Vázquez-Regueiro, P

2006-01-01

The LHCb experiment, at present under construction at the Large Hadron Collider at CERN, has been designed to perform high-precision measurements of CP violating phenomena and rare decays in the B meson systems. The need of a good tracking performance and the high density of particles close to the beam pipe lead to the use of silicon microstrip detectors in a significant part of the LHCb tracking system. The Silicon Tracker (ST) will be built using p-on-n silicon detectors with strip pitches of approximately 200 $\\mu$m and readout strips up to 38 cm in length. This thesis describes the tests carried out on silicon microstrip detectors for the ST, starting from the characterization of different prototypes up to the final tests on the detectors that are being installed at CERN. The results can be divided in three main blocks. The first part comprises an exhaustive characterization of several prototype sensors selected as suitable candidates for the detector and was performed in order to decide some design param...

Hydrogen passivation of silicon sheet solar cells

International Nuclear Information System (INIS)

Tsuo, Y.S.; Milstein, J.B.

1984-01-01

Significant improvements in the efficiencies of dendritic web and edge-supported-pulling silicon sheet solar cells have been obtained after hydrogen ion beam passivation for a period of ten minutes or less. We have studied the effects of the hydrogen ion beam treatment with respect to silicon material damage, silicon sputter rate, introduction of impurities, and changes in reflectance. The silicon sputter rate for constant ion beam flux of 0.60 +- 0.05 mA/cm 2 exhibits a maximum at approximately 1400-eV ion beam energy

Copper nanorod array assisted silicon waveguide polarization beam splitter.

Science.gov (United States)

Kim, Sangsik; Qi, Minghao

2014-04-21

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Compact polarization beam splitter for silicon photonic integrated circuits with a 340-nm-thick silicon core layer.

Science.gov (United States)

Li, Chenlei; Dai, Daoxin

2017-11-01

A polarization beam splitter (PBS) is proposed and realized for silicon photonic integrated circuits with a 340-nm-thick silicon core layer by introducing an asymmetric directional coupler (ADC), which consists of a silicon-on-insulator (SOI) nanowire and a subwavelength grating (SWG) waveguide. The SWG is introduced to provide an optical waveguide which has much higher birefringence than a regular 340-nm-thick SOI nanowire, so that it is possible to make the phase-matching condition satisfied for TE polarization only in the present design when the waveguide dimensions are optimized. Meanwhile, there is a significant phase mismatching for TM polarization automatically. In this way, the present ADC enables strong polarization selectivity to realize a PBS that separates TE and TM polarizations to the cross and through ports, respectively. The realized PBS has a length of ∼2  μm for the coupling region. For the fabricated PBS, the extinction ratio (ER) is 15-30 dB and the excess loss is 0.2-2.6 dB for TE polarization while the ER is 20-27 dB and the excess loss is 0.3-2.8 dB for TM polarization when operating in the wavelength range of 1520-1580 nm.

Dosimetric characteristics of a new unshielded silicon diode and its application in clinical photon and electron beams

International Nuclear Information System (INIS)

Griessbach, Irmgard; Lapp, Markus; Bohsung, Joerg; Gademann, Guenther; Harder, Dietrich

2005-01-01

Shielded p-silicon diodes, frequently applied in general photon-beam dosimetry, show certain imperfections when applied in the small photon fields occurring in stereotactic or intensity modulated radiotherapy (IMRT), in electron beams and in the buildup region of photon beam dose distributions. Using as a study object the shielded p-silicon diode PTW 60008, well known for its reliable performance in general photon dosimetry, we have identified these imperfections as effects of electron scattering at the metallic parts of the shielding. In order to overcome these difficulties a new, unshielded diode PTW 60012 has been designed and manufactured by PTW Freiburg. By comparison with reference detectors, such as thimble and plane-parallel ionization chambers and a diamond detector, we could show the absence of these imperfections. An excellent performance of the new unshielded diode for the special dosimetric tasks in small photon fields, electron beams and build-up regions of photon beams has been observed. The new diode also has an improved angular response. However, due to its over-response to low-energy scattered photons, its recommended range of use does not include output factor measurements in large photon fields, although this effect can be compensated by a thin auxiliary lead shield

Synthesis and analysis of gold nanoclusters on silicon substrates by ion beams

International Nuclear Information System (INIS)

Sood, D.K.; Venkatachalam, D.K.; Bhargava, S.K.; Evans, P.J.

2005-01-01

To facilitate the growth of silica nanowires on silicon substrates, two different seeding techniques: 1) ion implantation and 2) chemical deposition of as-synthesised gold colloids have been compared for the formation of catalysing gold nanoclusters. The prepared substrates of both types were analysed using Rutherford backscattering spectrometry at ANSTO to determine the amount of gold and its depth distribution. The topography of the substrates deposited with chemically synthesised gold nanoparticles were studied under SEM. The preliminary ion beam (RBS) analysis has shown ion implantation as a novel technique for seeding Au nanoclusters on silicon substrates facilitating growth of nanowires. This method holds a great potential for using any metal across the periodic table that can act as catalysing seed nanoclusters for nanowire growth. The use of chemical deposition as a seeding technique to deposit as-synthesised gold nanoparticles requires further investigations. RBS results show significant difference in the depth distribution of the gold nanoparticles on silicon substrates seeded by two different techniques. (author). 6 refs., 4 figs

Silicon microphotonic waveguides

International Nuclear Information System (INIS)

Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

2004-01-01

Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Science.gov (United States)

Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

2018-04-01

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

Modelling of diffusion in presurface silicon layer under the action of pulsed high-intensity ion beam

International Nuclear Information System (INIS)

Aktaev, N.E.; Remnev, G.E.

2015-01-01

The influence of the pulsed high-intensity ion beam on the silicon is studied by use the developed theoretical model. The input parameters of the model were the settings of the experimental setup of the TEMP-4. It is shown, that at the short-pulsed implantation regime of the TEMP-4 the silicon surface does not melt. However, the regime leads to the high temperature gradient which promotes the diffusion process from the surface into the depth the silicon simple. The diffused particles are the carbon atoms adsorbed on the silicon surface by the various cases. Thus, it is shown that the carbon atom diffused from the surface make the main contribution to the forming of the concentration profile. The concentration of the implanted carbon ions less more than tree orders compared with the concentration of the diffused carbon atoms. (authors)

10 μ m-thick four-quadrant transmissive silicon photodiodes for beam position monitor application: electrical characterization and gamma irradiation effects

Science.gov (United States)

Rafí, J. M.; Pellegrini, G.; Quirion, D.; Hidalgo, S.; Godignon, P.; Matilla, O.; Juanhuix, J.; Fontserè, A.; Molas, B.; Pothin, D.; Fajardo, P.

2017-01-01

Silicon photodiodes are very useful devices as X-ray beam monitors in synchrotron radiation beamlines. Owing to Si absorption, devices thinner than 10 μ m are needed to achieve transmission over 90% for energies above 10 keV . In this work, new segmented four-quadrant diodes for beam alignment purposes are fabricated on both ultrathin (10 μ m-thick) and bulk silicon substrates. Four-quadrant diodes implementing different design parameters as well as auxiliary test structures (single diodes and MOS capacitors) are studied. An extensive electrical characterization, including current-voltage (I-V) and capacitance-voltage (C-V) techniques, is carried out on non-irradiated and gamma-irradiated devices up to 100 Mrad doses. Special attention is devoted to the study of radiation-induced charge build-up in diode interquadrant isolation dielectric, as well as its impact on device interquadrant resistance. Finally, the devices have been characterized with an 8 keV laboratory X-ray source at 108 ph/s and in BL13-XALOC ALBA Synchroton beamline with 1011 ph/s and energies from 6 to 16 keV . Sensitivity, spatial resolution and uniformity of the devices have been evaluated.

Silicon etch process

International Nuclear Information System (INIS)

Day, D.J.; White, J.C.

1984-01-01

A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

International Nuclear Information System (INIS)

Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

2011-01-01

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

Flexural strength of proof-tested and neutron-irradiated silicon carbide

Science.gov (United States)

Price, R. J.; Hopkins, G. R.

1982-08-01

Proof testing before service is a valuable method for ensuring the reliability of ceramic structures. Silicon carbide has been proposed as a very low activation first-wall and blanket structural material for fusion devices, where it would experience a high flux of fast neutrons. Strips of three types of silicon carbide were loaded in four-point bending to a stress sufficient to break about a third of the specimens. Groups of 16 survivors were irradiated to 2 × 10 26n/ m2 ( E>0.05 MeV) at 740°C and bend tested to failure. The strength distribution of chemically vapor-deposited silicon carbide (Texas Instruments) was virtually unchanged by irradiation. The mean strength of sintered silicon carbide (Carborundum Alpha) was reduced 34% by irradiation, while the Weibull modulus and the truncated strength distribution characteristic of proof-tested material were retained. Irradiation reduced the mean strength of reaction-bonded silicon carbide (Norton NC-430) by 58%, and the spread in strength values was increased. We conclude that for the chemically vapor-deposited and the sintered silicon carbide the benefits of proof testing to eliminate low strength material are retained after high neutron exposures.

Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods

International Nuclear Information System (INIS)

Somatri-Bouamrane, R.

1996-01-01

Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions 12 C(α,α), 14 N(α,α), 16 O(α,α), 28 Si(α,α) and 14 N(α,p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

PAL-XFEL cavity beam position monitor pick-up design and beam test

Energy Technology Data Exchange (ETDEWEB)

Lee, Sojeong, E-mail: sojung8681@postech.ac.kr; Park, Young Jung; Kim, Changbum; Kim, Seung Hwan; Shin, Dong Cheol; Han, Jang-Hui; Ko, In Soo

2016-08-11

As an X-ray Free Electron Laser, PAL-XFEL is about to start beam commissioning. X-band cavity beam position monitor (BPM) is used in the PAL-XFEL undulator beam line. Prototypes of cavity BPM pick-up were designed and fabricated to test the RF characteristics. Also, the beam test of a cavity BPM pick-up was done in the Injector Test Facility (ITF). In the beam test, the raw signal properties of the cavity BPM pick-up were measured at a 200 pC bunch charge. According to the RF test and beam test results, the prototype cavity BPM pick-up design was confirmed to meet the requirements of the PAL-XFEL cavity BPM system.

GLAST beam test at SLAC

International Nuclear Information System (INIS)

Engovatov, D.; Anthony, P.; Atwood, W.

1996-10-01

In May and June, a beam test for GLAST calorimeter technologies was conducted. A parasitic low intensity electron/tagged photon beam line into the End Station A at SLAC was commissioned and used. The preliminary stage of the test was devoted to measuring the performance of the parasitic beam. In the main test we studied the response of GLAST prototype CsI and scintillating fiber calorimeters to the electrons and photons. Results of this work are discussed

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

Science.gov (United States)

Ghosh, P.

2014-07-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 1014neqcm-2. Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors.

Systematic characterization and quality assurance of silicon micro-strip sensors for the Silicon Tracking System of the CBM experiment

International Nuclear Information System (INIS)

Ghosh, P

2014-01-01

The Silicon Tracking System (STS) is the central detector of the Compressed Baryonic Matter (CBM) experiment at future Facility for Anti-proton and Ion Research (FAIR) at Darmstadt. The task of the STS is to reconstruct trajectories of charged particles originating at relatively high multiplicities from the high rate beam-target interactions. The tracker comprises of 300 μm thick silicon double-sided micro-strip sensors. These sensors should be radiation hard in order to reconstruct charged particles up to a maximum radiation dose of 1 × 10 14 n eq cm −2 . Systematic characterization allows us to investigate the sensor response and perform quality assurance (QA) tests. In this paper, systematic characterization of prototype double-sided silicon micro-strip sensors will be discussed. This procedure includes visual, passive electrical, and radiation hardness test. Presented results include tests on three different prototypes of silicon micro-strip sensors

Silicon telescope for prototype sensor characterisation using particle beam and cosmic rays

CERN Multimedia

Fu, Jinlin

2016-01-01

We present the design and the performance of a silicon strip telescope that we have built and recently used as reference tracking system for prototype sensor characterisation. The telescope was operated on beam at the CERN SPS and also using cosmic rays in the laboratory. We will describe the data acquisition system, based on a custom electronic board that we have developed, and the online monitoring system to control the quality of the data in real time.

Experimental Program for the CLIC test facility 3 test beam line

CERN Document Server

Adli, E; Dobert, S; Olvegaard, M; Schulte, D; Syratchev, I; Lillestol, Reidar

2010-01-01

The CLIC Test Facility 3 Test Beam Line is the first prototype for the CLIC drive beam decelerator. Stable transport of the drive beam under deceleration is a mandatory component in the CLIC two-beam scheme. In the Test Beam Line more than 50% of the total energy will be extracted from a 150 MeV, 28 A electron drive beam, by the use of 16 power extraction and transfer structures. A number of experiments are foreseen to investigate the drive beam characteristics under deceleration in the Test Beam Line, including beam stability, beam blow up and the efficiency of the power extraction. General benchmarking of decelerator simulation and theory studies will also be performed. Specially designed instrumentation including precision BPMs, loss monitors and a time-resolved spectrometer dump will be used for the experiments. This paper describes the experimental program foreseen for the Test Beam Line, including the relevance of the results for the CLIC decelerator studies.

The LHCb Silicon Inner Tracker

International Nuclear Information System (INIS)

Sievers, P.

2002-01-01

A silicon strip detector has been adopted as baseline technology for the LHCb Inner Tracker system. It consists of nine planar stations covering a cross-shaped area around the LHCb beam pipe. Depending on the final layout of the stations the sensitive surface of the Inner Tracker will be of the order of 14 m 2 . Ladders have to be 22 cm long and the pitch of the sensors should be as large as possible in order to reduce costs of the readout electronics. Major design criteria are material budget, short shaping time and a moderate spatial resolution of about 80 μm. After an introduction on the requirements of the LHCb Inner Tracker we present a description and characterization of silicon prototype sensors. First, laboratory and test beam results are discussed

Polarization Beam Splitter Based on a Self-Collimation Michelson Interferometer in a Silicon Photonic Crystal

International Nuclear Information System (INIS)

Chen Xi-Yao; Lin Gui-Min; Li Jun-Jun; Xu Xiao-Fu; Jiang Jun-Zhen; Qiang Ze-Xuan; Qiu Yi-Shen; Li Hui

2012-01-01

A polarization beam splitter based on a self-collimation Michelson interferometer (SMI) in a hole-type silicon photonic crystal is proposed and numerically demonstrated. Utilizing the polarization dependence of the transmission spectra of the SMI and polarization peak matching method, the SMI can work as a polarization beam splitter (PBS) by selecting an appropriate path length difference in the structure. Based on its novel polarization beam splitting mechanics, the polarization extinction ratios (PERs) for TM and TE modes are as high as 18.4 dB and 24.3 dB, respectively. Since its dimensions are only several operating wavelengths, the PBS may have practical applications in photonic integrated circuits. (fundamental areas of phenomenology(including applications))

FIRST BEAM TESTS OF THE MUON COLLIDER TARGET TEST BEAM LINE AT THE AGS

International Nuclear Information System (INIS)

BROWN, K.A.; GASSNER, D.; GLENN, J.W.; PRIGL, R.; SIMOS, N.; SCADUTO, J.; TSOUPAS, N.

2001-01-01

In this report we will describe the muon collider target test beam line which operates off one branch of the AGS switchyard. The muon collider target test facility is designed to allow a prototype muon collider target system to be developed and studied. The beam requirements for the facility are ambitious but feasible. The system is designed to accept bunched beams of intensities up to 1.6 x 10 13 24 GeV protons in a single bunch. The target specifications require beam spot sizes on the order of 1 mm, 1 sigma rms at the maximum intensity. We will describe the optics design, the instrumentation, and the shielding design. Results from the commissioning of the beam line will be shown

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

LYSO crystal calorimeter readout with silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Berra, A., E-mail: alessandro.berra@gmail.com [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Bonvicini, V. [INFN sezione di Trieste (Italy); Cecchi, C.; Germani, S. [INFN sezione di Perugia (Italy); Guffanti, D. [Università degli Studi dell' Insubria (Italy); Lietti, D. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Lubrano, P.; Manoni, E. [INFN sezione di Perugia (Italy); Prest, M. [Università degli Studi dell' Insubria (Italy); INFN sezione di Milano Bicocca (Italy); Rossi, A. [INFN sezione di Perugia (Italy); Vallazza, E. [INFN sezione di Trieste (Italy)

2014-11-01

Large area Silicon PhotoMultipliers (SiPMs) are the new frontier of the development of readout systems for scintillating detectors. A SiPM consists of a matrix of parallel-connected silicon micropixels operating in limited Geiger–Muller avalanche mode, and thus working as independent photon counters with a very high gain (∼10{sup 6}). This contribution presents the performance in terms of linearity and energy resolution of an electromagnetic homogeneous calorimeter composed of 9∼18X{sub 0} LYSO crystals. The crystals were readout by 36 4×4 mm{sup 2} SiPMs (4 for each crystal) produced by FBK-irst. This calorimeter was tested at the Beam Test Facility at the INFN laboratories in Frascati with a single- and multi-particle electron beam in the 100–500 MeV energy range.

Beam tests of an integrated prototype of the ATLAS Forward Proton detector

CERN Document Server

INSPIRE-00397348

2016-09-19

The ATLAS Forward Proton (AFP) detector is intended to measure protons scattered at small angles from the ATLAS interaction point. To this end, a combination of 3D Silicon pixel tracking modules and Quartz-Cherenkov time-of-flight (ToF) detectors is installed 210m away from the interaction point at both sides of ATLAS. Beam tests with an AFP prototype detector combining tracking and timing sub-detectors and a common readout have been performed at the CERN-SPS test-beam facility in November 2014 and September 2015 to complete the system integration and to study the detector performance. The successful tracking-timing integration was demonstrated. Good tracker hit efficiencies above 99.9% at a sensor tilt of 14{\\deg}, as foreseen for AFP, were observed. Spatial resolutions in the short pixel direction with 50 {\\mu}m pitch of 5.5 +/- 0.5 {\\mu}m per pixel plane and of 2.8 +/- 0.5 {\\mu}m for the full four-plane tracker at 14{\\deg} were found, largely surpassing the AFP requirement of 10 {\\mu}m. The timing detector...

Muon flux measurement with silicon detectors in the CERN neutrino beams

International Nuclear Information System (INIS)

Heijne, H.M.

1983-01-01

The present work mainly describes the 'Neutrino Flux Monitoring' system (NFM), which has been built for the 400-GeV Super Proton Synchrotron (SPS) neutrino beams. A treatment is given of some general subjects related to the utilization of silicon detectors and the properties of high-energy muons. Energy loss of minimal-ionizing particles, which has to be distinguished from energy deposition in the detector, is considered. Secondary radiation, also called 'spray', consisting of 'delta rays' and other cascade products, is shown to play an important role in the muon flux measurement inside a shield, especially for muons of high energy (> 100 GeV). Radiation induced damage in the detectors, which determines the long term performance, is discussed. The relation between the detector response and the real muon flux is determined. The use of NFM system for on-line beam monitoring is described. (Auth.)

The LHCb Silicon Tracker Project

International Nuclear Information System (INIS)

Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

2006-01-01

Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

Test beam results of LHCb scintillating fibre tracker prototypes

Energy Technology Data Exchange (ETDEWEB)

Bachmann, Sebastian; Comerma, Albert; Gerick, David; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich; Han, Xiaoxue [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

2016-07-01

During the Long Shutdown 2 of the LHC, the LHCb detector will undergo a major upgrade to meet the challenges of running at a higher luminosity. The current Inner and Outer Tracking system will not be sufficient to deal with the envisaged increased detector occupancy and higher radiation levels and will be replaced by a single tracking detector based on 0.250 mm diameter plastic scintillating fibres. The fibres are wound to multilayer ribbons 2.4 m long and read out by 128 channel silicon photomultiplier arrays. The Scintillating Fibre (SciFi) tracker will cover a total active area of 360 m{sup 2}, arranged in 12 layers. The performances of prototype modules having 6 and 8 layers of fibre have been tested at the SPS at CERN. This talk focuses on basic properties of the prototype modules such as spatial resolution, single hit efficiency and light yield measured during the test beam campaigns in 2015.

Quenching mechanisms of porous silicon photoluminescence with an electron beam at different intensity

CERN Document Server

Kostishko, B M

2001-01-01

The effect of the particles flux density by the electron irradiation of the porous silicon on the kinetics of the surface complexes desorption and correspondingly on the photoluminescence quenching degree is studied. It is shown, that by the electron beam density above 5.5 x 10 sup 1 sup 3 cm sup - sup 2 s sup - sup 1 there occurs the surface charging and decrease in its adsorption ability relative to the donor molecular groups

Test~of~Beam~Extraction~by~Crystal~Channeling~at~the~SPS: A First Step towards a LHC Extracted Beam

CERN Multimedia

2002-01-01

% RD22 \\\\ \\\\ The availability of a beam extracted out of the LHC accelerator would open up very interesting possibilities for B-physics, in particular for the study of CP-violation. Channeling in bent crystals appears to be the most promising method to produce an extracted beam of intensity $\\sim$~10$^{8}$ p/sec. This would provide as many as 10$^{10}$ $ B \\bar{B} $ pairs per year of run, two orders of magnitude more than could be produced by an e$^+$e$^-$ B-factory with L~=~10$^{34}$ cm$^{-2}$s$^{-1}$ We propose a R\\&D program to study beam extraction at the CERN SPS, using a silicon bent crystal to be installed in the SPS beam pipe and placed next to the beam in such a way as to intercept the beam halo. Transverse excitation of the beam in presence of non-linearities will be used to create halo conditions similar to what are expected for LHC.

LHCb: Installation and operation of the LHCb Silicon Tracker detector

CERN Multimedia

Esperante Pereira, D

2009-01-01

The LHCb experiment has been designed to perform high-precision measurements of CP violation and rare decays of B hadrons. The construction and installation phases of the Silicon Tracker (ST) of the experiment were completed by early summer 2008. The LHCb Silicon Tracker sums up to a total sensitive area of about 12 m^2 using silicon micro-strip technology and withstands charged particle fluxes of up to 5 x 10^5cm^−2s^−1. We will report on the preparation of the detectors for the first LHC beams. Selected results from the commissioning in LHCb are shown, including the first beam-related events accumulated during LHC injection tests in September 2008. Lessons are drawn from the experience gathered during the installation and commissioning.

Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

Science.gov (United States)

Shen, Jie; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Shahid, Ijaz; Zhang, Xiaofu; Yan, Sha; Le, Xiaoyun

2018-04-01

Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

Test setup for long term reliability investigation of Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Beczkowski, Szymon

2013-01-01

Silicon Carbide MOSFETs are now widely available and have frequently been demonstrated to offer numerous advantages over Silicon based devices. However, reliability issues remain a significant concern in their realisation in commercial power electronic systems. In this paper, a test bench...... is designed that enables an accelerated power cycling test to be performed on packaged Silicon Carbide MOSFETs (TO-247) under realistic operating conditions. An accelerated power cycling test is then performed, with on-state resistance selected as the observed parameter to detect degradation. On......-state resistance is routinely monitored online through the use of an innovative voltage measurement system. The packaged Silicon Carbide MOSFET is shown to exhibit a 25% increase in on-state resistance as the device ages throughout its lifetime, with the test still on-going....

MUST: A silicon strip detector array for radioactive beam experiments

International Nuclear Information System (INIS)

Blumenfeld, Y.; Auger, F.; Sauvestre, J.E.; Marechal, F.; Ottini, S.; Alamanos, N.; Barbier, A.; Beaumel, D.; Bonnereau, B.; Charlet, D.; Clavelin, J.F.; Courtat, P.; Delbourgo-Salvador, P.; Douet, R.; Engrand, M.; Ethvignot, T.; Gillibert, A.; Khan, E.; Lapoux, V.; Lagoyannis, A.; Lavergne, L.; Lebon, S.; Lelong, P.; Lesage, A.; Le Ven, V.; Lhenry, I.; Martin, J.M.; Musumarra, A.; Pita, S.; Petizon, L.; Pollacco, E.; Pouthas, J.; Richard, A.; Rougier, D.; Santonocito, D.; Scarpaci, J.A.; Sida, J.L.; Soulet, C.; Stutzmann, J.S.; Suomijaervi, T.; Szmigiel, M.; Volkov, P.; Voltolini, G.

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and analog channels of the array in one crate placed adjacent to the reaction chamber and fully remote controlled, including pulse visualization on oscilloscopes. A stand alone data acquisition system devoted to the MUST array has been developed. Isotope identification of light charged particles over the full energy range has been achieved, and the capability of the system to measure angular distributions of states populated in inverse kinematics reactions has been demonstrated

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Science.gov (United States)

Cattaneo, P. W.; Cervi, T.; Menegolli, A.; Oddone, M.; Prata, M.; Prata, M. C.; Rossella, M.

2017-07-01

Radiation hardness is an important requirement for solid state readout devices operating in high radiation environments common in particle physics experiments. The MEG II experiment, at PSI, Switzerland, investigates the forbidden decay μ+ → e+ γ. Exploiting the most intense muon beam of the world. A significant flux of non-thermal neutrons (kinetic energy Ek>= 0.5 MeV) is present in the experimental hall produced along the beam-line and in the hall itself. We present the effects of neutron fluxes comparable to the MEG II expected doses on several Silicon Photomultiplier (SiPMs). The tested models are: AdvanSiD ASD-NUV3S-P50 (used in MEG II experiment), AdvanSiD ASD-NUV3S-P40, AdvanSiD ASD-RGB3S-P40, Hamamatsu and Excelitas C30742-33-050-X. The neutron source is the thermal Sub-critical Multiplication complex (SM1) moderated with water, located at the University of Pavia (Italy). We report the change of SiPMs most important electric parameters: dark current, dark pulse frequency, gain, direct bias resistance, as a function of the integrated neutron fluency.

Electron beam irradiation after reconstruction with silicone gel implant in breast cancer

International Nuclear Information System (INIS)

Krishnan, L.; Krishnan, E.C.

1986-01-01

Irradiation for breast cancer in the presence of a silicone gel breast prosthesis is sometimes necessary. There is a concern among radiation and other oncologists as to whether the presence of the prosthetic implant would interfere with delivery of the needed irradiation doses. Electron beams, with their finite penetration and rapid fall-off, offer a mode of adequately treating the recurrence and minimizing the radiation to the underlying normal structures, such as the lung and the heart. The dose distribution using 9-20 MeV electrons in the presence of a breast prosthesis is compared to the dose distribution without the implant in a tissue equivalent water phantom. The results reveal no significant difference in the dose delivered due to the presence of the prosthesis. Clinical verification of the dosimetry in the presence of the prosthesis confirmed that the presence of the silicone gel implant does not compromise treatment by irradiation in the management of breast cancer

Dosimetric properties characterization of silicon diodes used in photon beam radiotherapy

International Nuclear Information System (INIS)

Bizetto, Cesar Augusto

2013-01-01

In the current work it was studied the performance of epitaxial (EPI) and float zone (FZ) silicon diodes as on-line dosimeters for megavoltage (EPI diode) and orthovoltage (EPI and FZ diode) photon beam radiotherapy. In order to be used as dosimeters the diodes were enclosed in black polymethylmethacrylate (PMMA) probes. The devices were then connected, on photovoltaic mode, to an electrometer Keithley® 6517B to allow measurements of the photocurrent. The irradiations were performed with 6 and 18 MV photon beams (Siemens Primus® linear accelerator), 6 and 15 MV (Novalis TX®) and 10, 25, 30 and 50 kV of a Pantak / Seifert X ray radiation device. During the measurements with the Siemens Primus the diodes were held between PMMA plates placed at 10.0 cm depth. When using Novalis TX® the devices were held between solid water plates placed at 50 cm depth. In both cases the diodes were centered in a radiation field of 10 x 10 cm 2 , with the source-to-surface distance (SSD) kept at 100 cm. In measurements with orthovoltage photon beams the diodes were placed 50.0 cm from the tube in a radiation field of 8 cm diameter. The dose-rate dependency was studied for 6 and 15 MV (varying the dose-rate from 100 to 600 monitor units per minute) and for the 50 kV beam by varying the current tube from 2 to 20 mA. All devices showed linear response with dose rate and, within uncertainties the charge collected is independent of dose rate. The current signals induced showed good instantaneous repeatability of the diodes, characterized by coefficients of variation of current (CV) smaller than 1.14% (megavoltage beams) and 0.15% for orthovoltage beams and coefficients of variation of charge (CV) smaller than 1.84% (megavoltage beams) and 1.67% (orthovoltage beams). The dose response curves were quite linear with linear correlation coefficients better than 0.9999 for all diodes. (author)

Development of Silicon Detectors for the High Luminosity LHC

International Nuclear Information System (INIS)

Eichhorn, Thomas Valentin

2015-07-01

The Large Hadron Collider (LHC) at CERN will be upgraded to a High Luminosity LHC in the year 2022, increasing the instantaneous luminosity by a factor of five. This will have major impacts on the experiments at the LHC, such as the Compact Muon Solenoid (CMS) experiment, and especially for their inner silicon tracking systems. Among other things, the silicon sensors used therein will be exposed to unprecedented levels of radiation damage, necessitating a replacement of the entire tracking detector. In order to maintain the excellent current performance, a new tracking detector has to be equipped with sensors of increased radiation hardness and higher granularity. The CMS experiment is undertaking an extensive R and D campaign in the search for the future silicon sensor technology baseline to be used in this upgrade. This thesis presents two methods suitable for use in this search: finite element TCAD simulations and test beam measurements. The simulations are focussed on the interstrip capacitance between sensor strips and are compared to measurements before and after the inclusion of radiation damage effects. A geometrical representation of the strip sensors used in the campaign has been found, establishing the predictive power of simulations. The test beam measurements make use of the high-precision pixel telescopes available at the DESY-II test beam facility. The performance of these telescopes has been assessed and their achievable pointing resolution has been found to be below 2 μm. Thin, epitaxial silicon is a candidate material for usage in radiation hard sensors for the future CMS tracking detector. Sample strip sensors of this material have been irradiated to fluences of up to 1.3 x 10 16 n eq /cm 2 with 800 MeV or 23 GeV protons. Test beam measurements with 5 GeV electrons have been performed to investigate the radiation hardness of epitaxial sensors using the pixel beam telescopes. The epitaxial device under test (DUT) has been integrated into the

Performance characterization of silicon pore optics

Science.gov (United States)

Collon, M. J.; Kraft, S.; Günther, R.; Maddox, E.; Beijersbergen, M.; Bavdaz, M.; Lumb, D.; Wallace, K.; Krumrey, M.; Cibik, L.; Freyberg, M.

2006-06-01

The characteristics of the latest generation of assembled silicon pore X-ray optics are discussed in this paper. These very light, stiff and modular high performance pore optics (HPO) have been developed [1] for the next generation of astronomical X-ray telescopes, which require large collecting areas whilst achieving angular resolutions better than 5 arcseconds. The suitability of 12 inch silicon wafers as high quality optical mirrors and the automated assembly process are discussed elsewhere in this conference. HPOs with several tens of ribbed silicon plates are assembled by bending the plates into an accurate cylindrical shape and directly bonding them on top of each other. The achievable figure accuracy is measured during assembly and in test campaigns at X-ray testing facilities like BESSY-II and PANTER. Pencil beam measurements allow gaining information on the quality achieved by the production process with high spatial resolution. In combination with full beam illumination a complete picture of the excellent performance of these optics can be derived. Experimental results are presented and discussed in detail. The results of such campaigns are used to further improve the production process in order to match the challenging XEUS requirements [2] for imaging resolution and mass.

Deployment Testing of Flexible Composite Hinges in Bi-Material Beams

Science.gov (United States)

Sauder, Jonathan F.; Trease, Brian

2016-01-01

Composites have excellent properties for strength, thermal stability, and weight. However, they are traditionally highly rigid, and when used in deployable structures require hinges bonded to the composite material, which increases complexity and opportunities for failure. Recent research in composites has found by adding an elastomeric soft matrix, often silicone instead of an epoxy, the composite becomes flexible. This work explores the deployment repeatability of silicone matrix composite hinges which join rigid composite beams. The hinges were found to have sub-millimeter linear deployment repeatability, and sub-degree angular deployment repeatability. Also, an interesting relaxation effect was discovered, as a hinges deployment error would decrease with time.

Silicon vertex tracker for RHIC PHENIX experiment

Energy Technology Data Exchange (ETDEWEB)

Taketani, A [RIKEN, Nishina Ctr Accelerator Based Sci, Wako, Saitama, Japan; Cianciolo, Vince [ORNL; Enokizono, Akitomo [Oak Ridge National Laboratory (ORNL); PHENIX, Collaboration [The

2010-01-01

The PHENIX experiment at Relativistic Heavy Ion Collider will be equipped with Silicon Vertex tracker to enhance its physics capability. There are four layers of silicon sensor to reconstruct charged tracks with 50 {micro}m resolution of decay length measurement. The VTX surrounds the collision point. The inner two layers and the outer two layers are composed of 30 pixel ladders and 44 stripixel ladders, respectively. We have been developing these detectors and done a performance test with 120 GeV proton beam.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

High energy Xe{sup +} ion beam induced ripple structures on silicon

Energy Technology Data Exchange (ETDEWEB)

Hanisch, Antje; Grenzer, Joerg; Facsko, Stefan; Winkler, Ingolf [Forschungszentrum Dresden-Rossendorf, Institute for Ion Beam Physics and Materials Research, Dresden (Germany); Biermanns, Andreas; Grigorian, Souren; Pietsch, Ullrich [University of Siegen (Germany). Institute of Physics

2008-07-01

Ion beam bombardment on semiconductor surfaces leads to well-defined morphological structures in the nanoscale range. Due to the impact of ions a self-organized wave-like surface structure develops. Ion bombardment causes an amorphization of a surface-adjacent layer of several nanometers and creates a periodical structure on the surface as well as at the amorphous-crystalline interface. We investigate the dependence of the periodicity on the crystallography of (100) silicon bombarded with Xe{sup +} ions, the ion beam incidence and the azimutal angle of the sample surface. So far we found that the ripple wavelength scales with the ion energy in a range of 5 to 70 keV. In order to understand the initiation of the ripple formation we also ask the question which role the initial surface structure plays. Therefore we investigate the formation of ripples on pre-structured and rough surfaces such as wafers with an intentional miscut. Therefore, we not only introduce a certain initial roughness but also vary the orientation of the (100) lattice plane in respect to the surface. We distinguish between ion beam induced surface effects (sputter erosion) and the influence of the crystalline Si lattice (strain) on the ripple formation.

Studying signal collection in the punch-through protection area of a silicon micro-strip sensor using a micro-focused X-ray beam

CERN Document Server

Poley, Anne-luise; The ATLAS collaboration

2018-01-01

For the Phase-II Upgrade of the ATLAS detector, a new, all-silicon tracker will be constructed in order to cope with the increased track density and radiation level of the High-Luminosity Large Hadron Collider. While silicon strip sensors are designed to minimise the fraction of dead material and maximise the active area of a sensor, concessions must be made to the requirements of operating a sensor in a particle physics detector. Sensor geometry features like the punch-through protection deviate from the standard sensor architecture and thereby affect the charge collection in that area. In order to study the signal collection of silicon strip sensors over their punch-through-protection area, ATLAS silicon strip sensors were scanned with a micro-focused X-ray beam at the Diamond Light Source. Due to the highly focused X-ray beam ($\\unit[2\\times3]{\\upmu\\text{m}}^2$) and the short average path length of an electron after interaction with an X-ray photon ($\\unit[\\leq2]{\\upmu\\text{m}}$), local signal collection i...

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

Energy Technology Data Exchange (ETDEWEB)

Barabanenkov, M.Yu. E-mail: barab@ipmt-hpm.ac.ru; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I

2000-11-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10{sup 17} cm{sup -2}, respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion.

Polyenergy ion beam synthesis of buried oxynitride layer in silicon

International Nuclear Information System (INIS)

Barabanenkov, M.Yu.; Agafonov, Yu.A.; Mordkovich, V.N.; Pustovit, A.N.; Vyatkin, A.F.; Zinenko, V.I.

2000-01-01

The efficiency of silicon oxynitride synthesis in silicon crystals implanted with substoichiometric doses of oxygen and nitrogen ions is investigated both experimentally and theoretically. Si crystals are implanted with oxygen and nitrogen ions with doses of 1.5 and 4.5x10 17 cm -2 , respectively, at fixed oxygen ion energy of 150 keV and nitrogen ion energies varied from 80 to 180 keV. The samples annealed at 1200 deg C for 2 h were analysed by secondary ion mass spectroscopy (SIMS). Theoretically, a `diffusion-alternative sinks' model is applied to the annealing stage of ion beam synthesis of a buried layer of a new phase in solids. It is shown that the maximum of the ternary phase production is attained when nitrogen ions are implanted deeper than oxygen ions. An explanation of this fact is given in terms of that (i) the segregation of oxygen and nitrogen species on the surface of oxide nuclei removes the kinetic restriction of nuclei growth, characteristic of oxide growth, at the expense of only oxygen atoms, and (ii) the higher the implantation energy the smoother the shape of ion range distribution in the target, which, in its turn, causes the predominance of the impurity sink over the impurity diffusion

Monitoring the beam flux in molecular beam epitaxy using laser multiphoton ionization

International Nuclear Information System (INIS)

Chien, R.; Sogard, M.R.

1990-01-01

In this paper, we will describe a method using laser nonresonant multiphoton ionization to measure beam flux in molecular beam epitaxy (MBE) systems. The results were obtained in a test chamber where a focused excimer laser beam was used to photoionize a small fraction of the atomic and molecular beams. The constituents of the beams were identified by a time-of-flight mass spectrometer. Ion signal strength was found to be directly correlated to the temperature of the atomic beam oven. Good stability and sensitivity on gallium, aluminum, and silicon atomic beams was demonstrated. Arsenic was also detected. We demonstrated very sensitive detection of contaminant atomic and molecular constituents of our system. We have also detected the presence of short-term fluctuations in the gallium flux from an effusion source. These fluctuations, previously suspected, can be in excess of ±10%

Cold Leak Tests of LHC Beam Screens

CERN Document Server

Collomb-Patton, C; Jenninger, B; Kos, N

2009-01-01

In order to guide the high energy proton beams inside its two 27 km long vacuum rings, the Large Hadron Collider (LHC) at CERN, Geneva, makes use of superconducting technology to create the required magnetic fields. More than 4000 beam screens, cooled at 7 20 K, are inserted inside the 1.9 K beam vacuum tubes to intercept beam induced heat loads and to provide dynamic vacuum stability. As extremely high helium leak tightness is required, all beam screens have been leak tested under cold conditions in a dedicated test stand prior to their installation. After describing the beam screen design and its functions, this report focuses on the cold leak test sequence and discusses the results.

Using short silicon crystals for beam extraction and collimation at U-70 proton synchrotron

International Nuclear Information System (INIS)

Afonin, A.G.; Baranov, V.T.; Biryukov, V.M.; Kotov, V.I.; Maisheev, V.A.; Terekhov, V.I.; Troyanov, E.F.; Fedotov, Yu.S.; Chepegin, V.N.; Chesnonkov, Yu.A.

2002-01-01

Results of investigations into escape and collimation of proton beams at the IHEP U-70 synchrotron with the application of short flexed silicon monocrystals in length 2 - 4 mm are demonstrated. Good agreement between the measured and calculated efficiency of the flexed crystal is available. Lowering efficiency with the decreasing proton energy is explained by growth of root-mean-square angle of the multiple Coulomb scattering and drop of dechanneling length [ru

A white beam neutron spin splitter

International Nuclear Information System (INIS)

Krist, T.; Klose, F.; Felcher, G.P.

1997-01-01

The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co 0.11 Fe 0.89 supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 angstrom -1 , whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths

A white beam neutron spin splitter

Energy Technology Data Exchange (ETDEWEB)

Krist, T. [Hahn Meitner Institute, Berlin (Germany); Klose, F.; Felcher, G.P. [Argonne National Lab., IL (United States)

1997-07-23

The polarization of a narrow, highly collimated polychromatic neutron beam is tested by a neutron spin splitter that permits the simultaneous measurement of both spin states. The device consists of a Si-Co{sub 0.11} Fe{sub 0.89} supermirror, which totally reflects one spin state up to a momentum transfer q=0.04 {angstrom}{sup -1}, whilst transmits neutrons of the opposite spin state. The supermirror is sandwitched between two thick silicon wafers and is magnetically saturated by a magnetic field of 400 Oe parallel to its surface. The neutron beam enters through the edge of one of the two silicon wavers, its spin components are split by the supermirror and exit from the opposite edges of the two silicon wafers and are recorded at different channels of a position-sensitive detector. The device is shown to have excellent efficiency over a broad range of wavelengths.

Planar edgeless silicon detectors for the TOTEM experiment

CERN Document Server

Ruggiero, G; Noschis, E

2007-01-01

Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

Ion beam analysis of PECVD silicon oxide thin films

International Nuclear Information System (INIS)

Fernandez-Lima, F.; Rodriguez, J.A.; Pedrero, E.; Fonseca Filho, H.D.; Llovera, A.; Riera, M.; Dominguez, C.; Behar, M.; Zawislak, F.C.

2006-01-01

A study of ion beam analysis techniques of plasma enhanced chemical vapor deposited (PECVD) silicon oxide thin films (1 μm thick) obtained from silane (SiH 4 ) and nitrous oxide (N 2 O) is reported. The film, elemental composition and surface morphology were determined as function of the reactant gas flow ratio, R = [N 2 O]/[SiH 4 ] in the 22-110 range using the Rutherford backscattering spectrometry, nuclear reaction analysis and atomic force microscopy techniques. The density of the films was determined by combining the RBS and thickness measurements. All the experiments were done at a deposition temperature of 300 deg. C. In all the cases almost stoichiometric oxides were obtained being the impurity content function of R. It was also observed that physical properties such as density, surface roughness and shape factor increase with R in the studied interval

VO production with 14.5 GeV/c silicon beams

International Nuclear Information System (INIS)

Saulys, A.C.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Miettinen, H.E.; Mutchler, G.S.; Nessi, M.; Nessi-Tedaldi, F.; Roberts, J.B.; Chan, C.S.; Kramer, M.A.; Hallman, T.J.; Madansky, L.; Lindebaum, S.J.

1990-01-01

This talk deals with Λ, Κ s O and bar Λ production with 14.5 GeV/c silicon beams. Why study V O production? Because the study of strangeness is an important part of the search for Quark Gluon Plasma (QGP). Many models predict an enhancement of strangeness in a QGP as compared to the amount of strangeness produced in a superposition of nucleon-nucleon interactions. The amount of enhancement varies from model to model. Even if no QGP is detected at AGS energies using Si beams, it is important to understand the production mechanisms in quantitative detail so that standard nucleon-nucleon production mechanism can be distinguished from QGP formation. The advantage of measuring strangeness production by measuring V O production is that V O 's can be identified by kinematics without the use of any special particle ID detectors. The disadvantage is that usually large aperture detectors are required. Experiment 810 has the needed large aperture. This talk describes the technique and results of V O production from ∼ 9,000 interactions of Si in a 1 mil (25 micron) Au target recorded in June, 1989

Properties of amorphous silicon thin films synthesized by reactive particle beam assisted chemical vapor deposition

International Nuclear Information System (INIS)

Choi, Sun Gyu; Wang, Seok-Joo; Park, Hyeong-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho; Park, Hyung-Ho

2010-01-01

Amorphous silicon thin films were formed by chemical vapor deposition of reactive particle beam assisted inductively coupled plasma type with various reflector bias voltages. During the deposition, the substrate was heated at 150 o C. The effects of reflector bias voltage on the physical and chemical properties of the films were systematically studied. X-ray diffraction and Raman spectroscopy results showed that the deposited films were amorphous and the films under higher reflector voltage had higher internal energy to be easily crystallized. The chemical state of amorphous silicon films was revealed as metallic bonding of Si atoms by using X-ray photoelectron spectroscopy. An increase in reflector voltage induced an increase of surface morphology of films and optical bandgap and a decrease of photoconductivity.

Test-to-Failure of Crystalline Silicon Modules: Preprint

Energy Technology Data Exchange (ETDEWEB)

Hacke, P.; Terwilliger, K.; Glick, S.; Trudell, D.; Bosco, N.; Johnston, S.; Kurtz, S. R.

2010-10-01

Accelerated lifetime testing of five crystalline silicon module designs was carried out according to the Terrestrial Photovoltaic Module Accelerated Test-to-Failure Protocol. This protocol compares the reliability of various module constructions on a quantitative basis. The modules under test are subdivided into three accelerated lifetime testing paths: 85..deg..C/85% relative humidity with system bias, thermal cycling between ?40..deg..C and 85..deg..C, and a path that alternates between damp heat and thermal cycling. The most severe stressor is damp heat with system bias applied to simulate the voltages that modules experience when connected in an array. Positive 600 V applied to the active layer with respect to the grounded module frame accelerates corrosion of the silver grid fingers and degrades the silicon nitride antireflective coating on the cells. Dark I-V curve fitting indicates increased series resistance and saturation current around the maximum power point; however, an improvement in junction recombination characteristics is obtained. Shunt paths and cell-metallization interface failures are seen developing in the silicon cells as determined by electroluminescence, thermal imaging, and I-V curves in the case of negative 600 V bias applied to the active layer. Ability to withstand electrolytic corrosion, moisture ingress, and ion drift under system voltage bias are differentiated.

Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

International Nuclear Information System (INIS)

Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

1978-11-01

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

Characterisation of edgeless technologies for pixellated and strip silicon detectors with a micro-focused X-ray beam

Science.gov (United States)

Bates, R.; Blue, A.; Christophersen, M.; Eklund, L.; Ely, S.; Fadeyev, V.; Gimenez, E.; Kachkanov, V.; Kalliopuska, J.; Macchiolo, A.; Maneuski, D.; Phlips, B. F.; Sadrozinski, H. F.-W.; Stewart, G.; Tartoni, N.; Zain, R. M.

2013-01-01

Reduced edge or ``edgeless'' detector design offers seamless tileability of sensors for a wide range of applications from particle physics to synchrotron and free election laser (FEL) facilities and medical imaging. Combined with through-silicon-via (TSV) technology, this would allow reduced material trackers for particle physics and an increase in the active area for synchrotron and FEL pixel detector systems. In order to quantify the performance of different edgeless fabrication methods, 2 edgeless detectors were characterized at the Diamond Light Source using an 11 μm FWHM 15 keV micro-focused X-ray beam. The devices under test were: a 150 μm thick silicon active edge pixel sensor fabricated at VTT and bump-bonded to a Medipix2 ROIC; and a 300 μm thick silicon strip sensor fabricated at CIS with edge reduction performed by SCIPP and the NRL and wire bonded to an ALiBaVa readout system. Sub-pixel resolution of the 55 μm active edge pixels was achieved. Further scans showed no drop in charge collection recorded between the centre and edge pixels, with a maximum deviation of 5% in charge collection between scanned edge pixels. Scans across the cleaved and standard guard ring edges of the strip detector also show no reduction in charge collection. These results indicate techniques such as the scribe, cleave and passivate (SCP) and active edge processes offer real potential for reduced edge, tiled sensors for imaging detection applications.

Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

International Nuclear Information System (INIS)

Agosteo, S.; Cirrone, G.A.P.; Colautti, P.; Cuttone, G.; D'Angelo, G.; Fazzi, A.; Introini, M.V.; Moro, D.; Pola, A.; Varoli, V.

2010-01-01

A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 μm in thickness and 9 μm in diameter) coupled to a residual energy measurement stage E (about 500 μm in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

Study of a silicon telescope for solid state microdosimetry: Preliminary measurements at the therapeutic proton beam line of CATANA

Energy Technology Data Exchange (ETDEWEB)

Agosteo, S. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Cirrone, G.A.P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); Colautti, P. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Cuttone, G. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali del Sud, via S. Sofia 44, 95123 Catania (Italy); D' Angelo, G.; Fazzi, A.; Introini, M.V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Moro, D. [Istituto Nazionale di Fisica Nucleare, Laboratori Nazionali di Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Pola, A., E-mail: andrea.pola@polimi.i [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy); Varoli, V. [Politecnico di Milano, Dipartimento di Energia, Sezione di Ingegneria Nucleare, via Ponzio 34/3, 20133 Milano (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano, via Celoria 16, 20133 Milano (Italy)

2010-12-15

A monolithic silicon device consisting of a matrix of micrometric cylindrical diodes (about 2 {mu}m in thickness and 9 {mu}m in diameter) coupled to a residual energy measurement stage E (about 500 {mu}m in thickness) was proposed and studied for assessing the quality of a therapeutic proton beam. The device was placed at different depths inside a polymethyl-methacrylate phantom and irradiated with a modulated 62 MeV proton beam at the Centro di AdroTerapia e Applicazioni Nucleari Avanzate (CATANA) of the Laboratori Nazionali del Sud (LNS, Catania, Italy) of the Istituto Nazionale di Fisica Nucleare (INFN). At each phantom depth, the energy imparted in the two detector stages was measured event-by-event in coincidence mode. The distributions of the energy imparted to the cylindrical diodes were corrected for tissue-equivalence by applying an optimized procedure. In order to perform a comparison with literature data measured with a cylindrical TEPC, the distributions derived with the silicon detector were corrected for shape-equivalence. The agreement with the microdosimetric spectra measured with the TEPC was satisfactory above the detection limit imposed by the electronic noise of the silicon-based system.

Report of test beam subgroup

International Nuclear Information System (INIS)

Nodulman, L.; Groom, D.; Harrison, M.; Toohig, T.; Gustafson, R.; Kirk, T.

1986-01-01

Tasks reported on include: exploration of issues of demand for test beams, and particularly for high energy; fleshing out the possibilities of the High Energy Booster beams; and seeking inexpensive ways of providing high energy facilities

IOP Latest R&D news and beam test performance of the highly granular SiW-ECAL technological prototype for the ILC

CERN Document Server

Irles, Adrián

2018-02-22

High precision physics at future colliders as the International Linear Collider (ILC) require unprecedented high precision in the determination of the energy of final state particles. The needed precision will be achieved thanks to the Particle Flow algorithms (PF) which require highly granular and hermetic calorimeters systems. The physical proof of concept of the PF was performed in the previous campaign of beam tests of physic prototypes within the CALICE collaboration. One of these prototypes was the physics prototype of the Silicon-Tungsten Electromagnetic Calorimeter (SiW-ECAL) for the International Large Detector at the ILC. In this document we present the latest nes on R&D of the next generation prototype, the technological prototype with fully embedded very front-end (VFE) electronics, of the SiW-ECAL. Special emphasis is given to the presentation and discussion of the first results from the beam test done at DESY in June 2017. The physics program for such beam test consisted in the calibration a...

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

Energy Technology Data Exchange (ETDEWEB)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Minden 11800 Penang (Malaysia)

2015-04-24

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

Science.gov (United States)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

2015-04-01

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as an absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×1016 atoms/cm3) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.

Test and control computer user's guide for a digital beam former test system

Science.gov (United States)

Alexovich, Robert E.; Mallasch, Paul G.

1992-01-01

A Digital Beam Former Test System was developed to determine the effects of noise, interferers and distortions, and digital implementations of beam forming as applied to the Tracking and Data Relay Satellite 2 (TDRS 2) architectures. The investigation of digital beam forming with application to TDRS 2 architectures, as described in TDRS 2 advanced concept design studies, was conducted by the NASA/Lewis Research Center for NASA/Goddard Space Flight Center. A Test and Control Computer (TCC) was used as the main controlling element of the digital Beam Former Test System. The Test and Control Computer User's Guide for a Digital Beam Former Test System provides an organized description of the Digital Beam Former Test System commands. It is written for users who wish to conduct tests of the Digital Beam forming Test processor using the TCC. The document describes the function, use, and syntax of the TCC commands available to the user while summarizing and demonstrating the use of the commands wtihin DOS batch files.

Beam test performance of the APV5 chip

International Nuclear Information System (INIS)

De Fez-Laso, M.D.M.; Gill, K.; MacEvoy, B.; Millmore, M.; Potts, A.; Raymond, M.

1996-01-01

The performance of the latest prototype of the radiation hard front end chip to be used by the CMS collaboration for analogue readout of the microstrip tracker has been evaluated with a silicon microstrip detector in a beam at CERN. The circuit, developed by the RD20 collaboration, consists of 128 channels of amplifier, pipeline memory, analogue signal processor and a serial multiplexer. As a result of these studies improvements in the circuit design have been devised which will be implemented in the next version. (orig.)

ORNL 150 keV neutral beam test facility

International Nuclear Information System (INIS)

Gardner, W.L.; Kim, J.; Menon, M.M.; Schilling, G.

1977-01-01

The 150 keV neutral beam test facility provides for the testing and development of neutral beam injectors and beam systems of the class that will be needed for the Tokamak Fusion Test Reactor (TFTR) and The Next Step (TNS). The test facility can simulate a complete beam line injection system and can provide a wide range of experimental operating conditions. Herein is offered a general description of the facility's capabilities and a discussion of present system performance

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Bond strength tests between silicon wafers and duran tubes (fusion bonded fluidic interconnects)

NARCIS (Netherlands)

Fazal, I.; Berenschot, Johan W.; de Boer, J.H.; Jansen, Henricus V.; Elwenspoek, Michael Curt

2005-01-01

The fusion bond strength of glass tubes with standard silicon wafers is presented. Experiments with plain silicon wafers and those coated with silicon oxide and silicon nitride are presented. Results obtained are discussed in terms of homogeneity and strength of fusion bond. High pressure testing

Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

Energy Technology Data Exchange (ETDEWEB)

Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi [Nagaoka Univ. of Technology, Extreme Energy-Density Research Inst., Nagaoka, Niigata (Japan)

2002-06-01

The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

Substrate bias effect on crystallinity of polycrystalline silicon thin films prepared by pulsed ion-beam evaporation method

International Nuclear Information System (INIS)

Ali, Fazlat; Gunji, Michiharu; Yang, Sung-Chae; Suzuki, Tsuneo; Suematsu, Hisayuki; Jiang, Weihua; Yatsui, Kiyoshi

2002-01-01

The deposition of polycrystalline silicon thin films has been tried by a pulsed ion-beam evaporation method, where high crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity and the deposition rate were improved by applying bias voltage to the substrate, where instantaneous substrate heating might have occurred by ion-bombardment. (author)

The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

International Nuclear Information System (INIS)

Sievilae, Paeivi; Chekurov, Nikolai; Tittonen, Ilkka

2010-01-01

Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10 13 ions cm -2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines μm -1 .

Electron-beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. (UK)

Beam splash effects on ATLAS silicon microstrip detectors evaluated using 1-w Nd YAG laser

CERN Document Server

Hara, K; Kohriki, T; Kuwano, T; Moorhead, G F; Terada, S; Unno, Y

2005-01-01

On an incident of accelerator beam loss, the tracking detector located close to the beam line is subjected to receive intensive radiation in a short period. We used a 1-W focused Nd: YAG laser and simulated the effects on the ATLAS microstrip detector. The laser corresponds to intensity of up to 1 multiplied by 109mips/pulse with a pulse width of about 10 ns. We observed breaks on Al strips on extreme conditions, depending on the laser intensity and bias voltage applied to the silicon sensor. The break can be interpreted as the oxide breakdown due to a large voltage locally created across the oxide by the intensive signal charges. The robustness of the Semiconductor Tracker (SCT) module including readout ASICs is also evaluated.

Test-beam measurements and simulation studies of thin pixel sensors for the CLIC vertex detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00574329; Dannheim, Dominik

The multi-$TeV$ $e^{+}e^{-}$ Compact Linear Collider (CLIC) is one of the options for a future high-energy collider for the post-LHC era. It would allow for searches of new physics and simultaneously offer the possibility for precision measurements of standard model processes. The physics goals and experimental conditions at CLIC set high precision requirements on the vertex detector made of pixel detectors: a high pointing resolution of 3 $\\mu m$, very low mass of 0.2% $X_{0}$ per layer, 10 ns time stamping capability and low power dissipation of 50 mW/$cm^{2}$ compatible with air-flow cooling. In this thesis, hybrid assemblies with thin active-edge planar sensors are characterised through calibrations, laboratory and test-beam measurements. Prototypes containing 50 $\\mu m$ to 150 $\\mu m$ thin planar silicon sensors bump-bonded to Timepix3 readout ASICs with 55 $\\mu m$ pitch are characterised in test beams at the CERN SPS in view of their detection efficiency and single-point resolution. A digitiser for AllP...

Position-sensitive silicon strip detector characterization using particle beams

CERN Document Server

Maenpaeae, Teppo

2012-01-01

Silicon strip detectors are fast, cost-effective and have an excellent spatial resolution.They are widely used in many high-energy physics experiments. Modern high energyphysics experiments impose harsh operation conditions on the detectors, e.g., of LHCexperiments. The high radiation doses cause the detectors to eventually fail as a resultof excessive radiation damage. This has led to a need to study radiation tolerance usingvarious techniques. At the same time, a need to operate sensors approaching the endtheir lifetimes has arisen.The goal of this work is to demonstrate that novel detectors can survive the environment that is foreseen for future high-energy physics experiments. To reach this goal,measurement apparatuses are built. The devices are then used to measure the propertiesof irradiated detectors. The measurement data are analyzed, and conclusions are drawn.Three measurement apparatuses built as a part of this work are described: two telescopes measuring the tracks of the beam of a particle acceler...

The final focus test beam project

International Nuclear Information System (INIS)

Burke, D.

1991-05-01

An overview is given of the Final Focus Test Beam (FFTB) that is being constructed as a prototype final focus system for a future electron-positron linear collider. This beam line will use as input the 50 GeV electron beam from the SLC linac, and is designed to reduce the transverse dimensions of the beam spot at the focal point to 1 μm. 5 refs., 2 figs., 1 tab

V0 production with 14.5 GeV/c silicon beams

International Nuclear Information System (INIS)

Bonner, B.E.; Buchanan, J.A.; Chiou, C.N.; Clement, J.M.; Corcoran, M.D.; Kruk, J.W.; Miettinen, H.E.; Mutchler, G.S.; Nessi, M.; Nessi-Tedaldi, F.; Roberts, J.B.; Chan, C.S.; Kramer, M.A.; Etkin, A.; Foley, K.J.; Hackenburg, R.W.; Longacre, R.S.; Love, W.A.; Morris, T.W.; Platner, E.D.; Saulys, A.C.; Hallman, T.J.; Madansky, L.; Lindenbaum, S.J.

1990-01-01

This talk deals with Λ, K s 0 and bar Λ production with 14.5 GeV/c Silicon beams. Why study Λ 0 production? Because the study of strangeness is an important part of the search for Quark Gluon Plasma (QGP). Many models predict an enhancement of strangeness in a QGP as compared to the amount of strangeness produced in a superposition of nucleon-nucleon interactions. The amount of enhancement varies from model to model. Even if no QGP is detected at AGS energies using Si beams, it is important to understand the production mechanisms in quantitative detail so that standard nucleon-nucleon production mechanism can be distinguished from QGP formation. The advantage of measuring strangeness production by measuring V 0 production is that V 0 's can be identified by kinematics without the use of any special particle ID detectors. The disadvantage is that usually large aperture detectors are required. Experiment 810 has the needed large aperture. This talk describes the technique and results of V 0 production from ∼9000 interactions of Si in a 1 mil (25 micron) Au target recorded in June 1989. 13 figs., 1 tab

Ion beam deposited epitaxial thin silicon films

International Nuclear Information System (INIS)

Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

1991-01-01

Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

Electron beam lithography

International Nuclear Information System (INIS)

Harriott, L.; Liddle, A.

1997-01-01

As part of a commemorative series of articles to mark the hundredth anniversary of the discovery of the electron, this article describes the use of electron beams to write features on silicon wafers. Recent advances in electron beam lithography, as it is known, could enable this technology to be used for the mass manufacture of silicon chips. The validation of space-charge optimization and evaluation of printing techniques is underway. 5 figs

Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

Energy Technology Data Exchange (ETDEWEB)

Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

2013-09-25

We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

Mechanical and tribological properties of silicon nitride films synthesized by ion beam enhanced deposition

International Nuclear Information System (INIS)

Chen Yuanru; Li Shizhuo; Zhang Xushou; Liu Hong; Yang Genqing; Qu Baochun

1991-01-01

This article describes preliminary investigations of mechanical and tribological properties of silicon nitride film formed by ion beam enhanced deposition (IBED) on GH37 (Ni-based alloys) steel. The films were synthesized by silicon vapor deposition with a rate of 1 A/s and by 40 keV nitrogen ion bombardment simultaneously. The thickness of the film was about 5000 A. X-ray photoelectron spectroscopy and infrared absorption spectroscopy revealed that a stoichiometric Si 3 N 4 film was formed. The observation of TEM showed that the IBED Si 3 N 4 film normally had an amorphous structure. However, electron diffraction patterns revealed a certain crystallinity. The mechanical and tribological properties of the films were investigated with a scratch tester, microhardness meter, and a ball-on-disc tribometer respectively. Results show that the adhesive strength between film and substrate is about 51 N, the Vickers microhardness with a load of 0.2 N is 980, the friction coefficient measured for steel against silicon nitride film ranges from 0.1 to 0.15, and the wear rate of coatings is about 6.8x10 -5 mm 3 /(mN). Finally, the relationship among thermal annealing, crystallinity and tribological characteristics of the Si 3 N 4 film is discussed. (orig.)

Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition

International Nuclear Information System (INIS)

Shima, Yukari; Hasuyama, Hiroki; Kondoh, Toshiharu; Imaoka, Yasuo; Watari, Takanori; Baba, Koumei; Hatada, Ruriko

1999-01-01

Silicon oxynitride (SiO x N y ) films (0.1-0.7 μm) were produced on Si (1 0 0), glass and 316L stainless steel substrates by ion beam assisted deposition (IBAD) using Si evaporation and the concurrent bombardment with a mixture of 200 eV N 2 and Ar, or O 2 and Ar ions. Adhesion was evaluated by pull-off tests. Film hardness was measured by a nanoindentation system with AFM. The measurement of internal stress in the films was carried out by the Stoney method. The film structure was examined by GXRD. XPS was employed to measure the composition of films and to analyze the chemical bonds. The dependence of mechanical properties on the film thickness and the processing temperature during deposition was studied. Finally, the relations between the mechanical properties of the films and the correlation with corrosion-protection ability of films are discussed and summarized

HV Test of the CTS Edgeless Silicon Detector in Vacuum and Close to a Grounded Plate

CERN Document Server

Eremin, Vladimir; Ruggiero, Gennaro

2007-01-01

The TOTEM Roman Pot Silicon sensors will be operated in vacuum to minimise the mechanical stress of the thin metal window which separates the detector package from the ultra high vacuum of the beam. To approach the beam axis as close as possible the detectors will be mounted with their edge at a distance of the order 100 - 200 um from the thin metal window. As the detectors will be run in overdepletion mode to allow the full charge collection within the shaping time of the readout electronics, there will be a potential drop of more than 100 V across their edge. Moreover this potential drop might need to be further increased with the accumulated radiation dose. The main goals of the tests described in this note are: - Characterisation of the voltage-current characteristics when the detector edge is in the direct vicinity of a grounded metal plate which simulates the above mentioned vacuum window; - Demonstration of the detector operation in vacuum at different pressures.

Results of Final Focus Test Beam

Energy Technology Data Exchange (ETDEWEB)

Walz, Dieter R

2003-06-13

The beam experiments of Final Focus Test Beam (FFTB) started in September 1993 at SLAC, and have produced a 1.7 {micro}m x 75 nm spot of 46 GeV electron beam. A number of new techniques involving two nanometer spot-size monitors have been developed. Several beam diagnostic/tuning schemes are applied to achieve and maintain the small spot. This experiment opens the way toward the nanometer world for future linear colliders.

Alkali-developable silicone-based negative photoresist (SNP) for deep UV, electron beam, and X-ray lithographies

International Nuclear Information System (INIS)

Ban, Hiroshi; Tanaka, Akinobu; Kawai, Yoshio; Deguchi, Kimiyoshi

1989-01-01

A new silicone-based negative photoresist (SNP) developable with alkaline aqueous solutions is prepared. SNP composed of acetylated phenylsilsesquioxane oligomer and azidopyrene is applied to deep UV, electron beam (EB), and X-ray lithographies. SNP slightly swells in alkaline developers, thus exhibiting exceptionally high resolution characteristics for a negative resist. The resistance of SNP to oxygen reactive ion etching is approximately 30 times greater than that of conventional novolac resists. (author)

Latest R&D news and beam test performance of the highly granular SiW-ECAL technological prototype for the ILC

Science.gov (United States)

Irles, A.

2018-02-01

High precision physics at future colliders as the International Linear Collider (ILC) require unprecedented high precision in the determination of the energy of final state particles. The needed precision will be achieved thanks to the Particle Flow algorithms (PF) which require highly granular and hermetic calorimeters systems. The physical proof of concept of the PF was performed in the previous campaign of beam tests of physic prototypes within the CALICE collaboration. One of these prototypes was the physics prototype of the Silicon-Tungsten Electromagnetic Calorimeter (SiW-ECAL) for the ILC. In this document we present the latest news on R&D of the next generation prototype, the technological prototype with fully embedded very front-end (VFE) electronics, of the SiW-ECAL. Special emphasis is given to the presentation and discussion of the first results from the beam test done at DESY in June 2017. The physics program for such beam test consisted in the calibration and commissioning of the current set of available SiW ECAL modules; the test of performance of individual slabs under 1T magnetic fields; and the study of electromagnetic showers events.

New x-ray parallel beam facility XPBF 2.0 for the characterization of silicon pore optics

Science.gov (United States)

Krumrey, Michael; Müller, Peter; Cibik, Levent; Collon, Max; Barrière, Nicolas; Vacanti, Giuseppe; Bavdaz, Marcos; Wille, Eric

2016-07-01

A new X-ray parallel beam facility (XPBF 2.0) has been installed in the laboratory of the Physikalisch-Technische Bundesanstalt at the synchrotron radiation facility BESSY II in Berlin to characterize silicon pore optics (SPOs) for the future X-ray observatory ATHENA. As the existing XPBF which is operated since 2005, the new beamline provides a pencil beam of very low divergence, a vacuum chamber with a hexapod system for accurate positioning of the SPO to be investigated, and a vertically movable CCD-based camera system to register the direct and the reflected beam. In contrast to the existing beamline, a multilayer-coated toroidal mirror is used for beam monochromatization at 1.6 keV and collimation, enabling the use of beam sizes between about 100 μm and at least 5 mm. Thus the quality of individual pores as well as the focusing properties of large groups of pores can be investigated. The new beamline also features increased travel ranges for the hexapod to cope with larger SPOs and a sample to detector distance of 12 m corresponding to the envisaged focal length of ATHENA.

Tests of Local Hadron Calibration Approaches in ATLAS Combined Beam Tests

International Nuclear Information System (INIS)

Grahn, Karl-Johan; Kiryunin, Andrey; Pospelov, Guennadi

2011-01-01

Three ATLAS calorimeters in the region of the forward crack at |η| 3.2 in the nominal ATLAS setup and a typical section of the two barrel calorimeters at |η| = 0.45 of ATLAS have been exposed to combined beam tests with single electrons and pions. Detailed shower shape studies of electrons and pions with comparisons to various Geant4 based simulations utilizing different physics lists are presented for the endcap beam test. The local hadron calibration approach as used in the full Atlas setup has been applied to the endcap beam test data. An extension of it using layer correlations has been tested with the barrel test beam data. Both methods utilize modular correction steps based on shower shape variables to correct for invisible energy inside the reconstructed clusters in the calorimeters (compensation) and for lost energy deposits outside of the reconstructed clusters (dead material and out-of-cluster deposits). Results for both methods and comparisons to Monte Carlo simulations are presented.

Fabricating a silicon nanowire by using the proximity effect in electron beam lithography for investigation of the Coulomb blockade effect

International Nuclear Information System (INIS)

Zhang Xiangao; Fang Zhonghui; Chen Kunji; Xu Jun; Huang Xinfan

2011-01-01

We present an approach to fabricate a silicon nanowire relying on the proximity effect in electron beam lithography with a low acceleration voltage system by designing the exposure patterns with a rhombus sandwiched between two symmetric wedges. The reproducibility is investigated by changing the number of rhombuses. A device with a silicon nanowire is constructed on a highly doped silicon-on-insulator wafer to measure the electronic transport characteristics. Significant nonlinear behavior of current-voltage curves is observed at up to 150 K. The dependence of current on the drain voltage and back-gate voltage shows Coulomb blockade oscillations at 5.4 K, revealing a Coulomb island naturally formed in the nanowire. The mechanism of formation of the Coulomb island is discussed.

Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

Energy Technology Data Exchange (ETDEWEB)

Poley, Luise; Lohwasser, Kristin [DESY, Hamburg (Germany); Blue, Andrew [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

2016-11-15

The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

Investigations into the impact of bond pads and p-stop implants on the detection efficiency of silicon micro-strip sensors

International Nuclear Information System (INIS)

Poley, Luise; Lohwasser, Kristin; Blue, Andrew

2016-11-01

The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 μm. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the responding area of a sensor strip.

Experimental testing on free vibration behaviour for silicone rubbers proposed within lumbar disc prosthesis

Energy Technology Data Exchange (ETDEWEB)

Rotaru, Iuliana, E-mail: rotaruiuliana2000@gmail.com [“Gheorghe Asachi” Technical University of Iasi, Faculty of Mechanical Engineering, Department of Mechanical Engineering, Mechatronics and Robotics, 61-63 Bd. Dimitrie Mangeron, 700050 Iasi (Romania); “Gr. T. Popa” University of Medicine and Pharmacy of Iasi, Faculty of Medical Bioengineering, Department of Biomedical Sciences, 9-13 M. Kogalniceanu Street, 700454 Iasi (Romania); Bujoreanu, Carmen [“Gheorghe Asachi” Technical University of Iasi, Faculty of Mechanical Engineering, Department of Mechanical Engineering, Mechatronics and Robotics, 61-63 Bd. Dimitrie Mangeron, 700050 Iasi (Romania); Bele, Adrian; Cazacu, Maria [“Petru Poni” Institute of Macromolecular Chemistry, Aleea Gr. Ghica Voda 41 A, 700487 Iasi (Romania); Olaru, Dumitru [“Gheorghe Asachi” Technical University of Iasi, Faculty of Mechanical Engineering, Department of Mechanical Engineering, Mechatronics and Robotics, 61-63 Bd. Dimitrie Mangeron, 700050 Iasi (Romania)

2014-09-01

This research was focused on the damping capacity study of two types of silicone rubbers proposed as layers within total lumbar disc prostheses of ball-and-socket model. In order to investigate the damping capacity, the two silicone rubber types mainly differing by the molecular mass of polymeric matrix and the filler content, as was emphasized by scanning electron microscopy and differential scanning calorimetry, were subjected to free vibration testing. Using an adapted experimental installation, three kinds of damping testing were realised: tests without samples and tests with three samples of each type of silicone rubber (69 ShA and 99 ShA). The free vibration tests were performed at a frequency of about 6 Hz using a weight of 11.8 kg. The relative damping coefficient was determined by measuring of two successive amplitudes on the vibrogram and calculating of the logarithmic decrement. The test results with silicone rubber samples showed a relative damping coefficient of 0.058 and respectively 0.077, whilst test results without samples showed a relative damping coefficient of 0.042. These silicone rubbers were found to have acceptable damping properties to be used as layers placed inside the prosthetic components. - Highlights: • Two types of silicone rubber were proposed within the total lumbar disc prostheses. • The filler content of elastomers was highlighted by microscopy investigation. • Damping capacity of the two elastomers was evaluated using free vibration analysis. • The logarithmic decrement and the relative damping coefficient were determined. • The silicone rubbers prepared in our work showed acceptable damping properties.

Experimental testing on free vibration behaviour for silicone rubbers proposed within lumbar disc prosthesis

International Nuclear Information System (INIS)

Rotaru, Iuliana; Bujoreanu, Carmen; Bele, Adrian; Cazacu, Maria; Olaru, Dumitru

2014-01-01

This research was focused on the damping capacity study of two types of silicone rubbers proposed as layers within total lumbar disc prostheses of ball-and-socket model. In order to investigate the damping capacity, the two silicone rubber types mainly differing by the molecular mass of polymeric matrix and the filler content, as was emphasized by scanning electron microscopy and differential scanning calorimetry, were subjected to free vibration testing. Using an adapted experimental installation, three kinds of damping testing were realised: tests without samples and tests with three samples of each type of silicone rubber (69 ShA and 99 ShA). The free vibration tests were performed at a frequency of about 6 Hz using a weight of 11.8 kg. The relative damping coefficient was determined by measuring of two successive amplitudes on the vibrogram and calculating of the logarithmic decrement. The test results with silicone rubber samples showed a relative damping coefficient of 0.058 and respectively 0.077, whilst test results without samples showed a relative damping coefficient of 0.042. These silicone rubbers were found to have acceptable damping properties to be used as layers placed inside the prosthetic components. - Highlights: • Two types of silicone rubber were proposed within the total lumbar disc prostheses. • The filler content of elastomers was highlighted by microscopy investigation. • Damping capacity of the two elastomers was evaluated using free vibration analysis. • The logarithmic decrement and the relative damping coefficient were determined. • The silicone rubbers prepared in our work showed acceptable damping properties

Test-beam with Python

CERN Multimedia

CERN. Geneva

2016-01-01

The talk will show the current implementation of the software tool developed by Silab (Bonn) and Oxford University to analyze test beam data with Mimosa telescope. Data collected from the telescope are merged with hits recorded on pixel detectors with a FE-I4 chips, the official read-out chip of the Atlas Pixel Detector. The software tool used to collect data, pyBAR, is developed with Python as well. The test-beam analysis tool parses the data-sets, recreates the tracks, aligns the telescope planes and allows to investigate the detectors spatial properties with high resolution. This has just allowed to study the properties of brand new devices that stand as possible candidate to replace the current pixel detector in Atlas.

Crystal Collimation with Lead Ion Beams at Injection Energy in the LHC

CERN Document Server

Rossi, Roberto; Andreassen, Arvid; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; Galluccio, Francesca; CERN. Geneva. ATS Department

2015-01-01

During this MD, performed on December 2nd 2015, bent silicon crystals were tested with ion beams for a possible usage of crystal-assisted collimation. Tests were performed at injection energy, using both horizontal and vertical crystals. Ion channeling was observed for the first time with LHC beams at the record energy of 450 GeV and the channeled beams were probed with scans performed with secondary collimators. Measurements of cleaning efficiency of a crystal-based collimation system were also performed.

arXiv Signal coupling to embedded pitch adapters in silicon sensors

CERN Document Server

Artuso, M.; Bezshyiko, I.; Blusk, S.; Bruendler, R.; Bugiel, S.; Dasgupta, R.; Dendek, A.; Dey, B.; Ely, S.; Lionetto, F.; Petruzzo, M.; Polyakov, I.; Rudolph, M.; Schindler, H.; Steinkamp, O.; Stone, S.

2018-01-01

We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.

Simulation of Particle Fluxes at the DESY-II Test Beam Facility

International Nuclear Information System (INIS)

Schuetz, Anne

2015-05-01

In the course of this Master's thesis ''Simulation of Particle Fluxes at the DESY-II Test Beam Facility'' the test beam generation for the DESY test beam line was studied in detail and simulated with the simulation software SLIC. SLIC uses the Geant4 toolkit for realistic Monte Carlo simulations of particles passing through detector material.After discussing the physics processes relevant for the test beam generation and the principles of the beam generation itself, the software used is introduced together with a description of the functionality of the Geant4 Monte Carlo simulation. The simulation of the test beam line follows the sequence of the test beam generation. Therefore, it starts with the simulation of the beam bunch of the synchrotron accelerator DESY-II, and proceeds step by step with the single test beam line components. An additional benefit of this thesis is the provision of particle flux and trajectory maps, which make fluxes directly visible by following the particle tracks through the simulated beam line. These maps allow us to see each of the test beam line components, because flux rates and directions change rapidly at these points. They will also guide the decision for placements of future test beam line components and measurement equipment.In the end, the beam energy and its spread, and the beam rate of the final test beam in the test beam area were studied in the simulation, so that the results can be compared to the measured beam parameters. The test beam simulation of this Master's thesis will serve as a key input for future test beam line improvements.

Neutron beam testing of triblades

Energy Technology Data Exchange (ETDEWEB)

Michalak, Sarah E [Los Alamos National Laboratory; Du Bois, Andrew J [Los Alamos National Laboratory; Storlie, Curtis B [Los Alamos National Laboratory; Rust, William N [Los Alamos National Laboratory; Du Bois, David H [Los Alamos National Laboratory; Modl, David G [Los Alamos National Laboratory; Quinn, Heather M [Los Alamos National Laboratory; Blanchard, Sean P [Los Alamos National Laboratory; Manuzzato, Andrea [UNIV DEGLI STUDI DI PADOVA ITALY

2010-12-16

Four IBM Triblades were tested in the Irradiation of Chips and Electronics facility at the Los Alamos Neutron Science Center. Triblades include two dual-core Opteron processors and four PowerXCell 8i (Cell) processors. The Triblades were tested in their field configuration while running different applications, with the beam aimed at the Cell processor or the Opteron running the application. Testing focused on the Cell processors, which were tested while running five different applications and an idle condition. While neither application nor Triblade was statistically important in predicting the hazard rate, the hazard rate when the beam was aimed at the Opterons was significantly higher than when it was aimed at the Cell processors. In addition, four Cell blades (one in each Triblade) suffered voltage shorts, leading to their inoperability. The hardware tested is the same as that in the Roadrunner supercomputer.

Characterization and Beam Tests Results of Non-Uniformly Irradiated 3D Pixel Sensors for HEP Experiments

International Nuclear Information System (INIS)

Lopez, I.; Grinstein, S.; Micelli, A.; Tsiskaridze, S.

2013-06-01

3D Pixel detectors, with cylindrical electrodes that penetrate the silicon substrate, offer advantages over standard planar sensors in terms of radiation hardness, since the charge collection distance can be reduced independently of the bulk thickness. In the framework of the ATLAS Forward Physics (AFP) program, work has been carried out to study the suitability of 3D pixel devices for forward proton tracking. The AFP tracker unit will consist of an array of five pixel sensors placed at 2-3 mm from the Large Hadron Collider (LHC) proton beam. The proximity to the beam is essential for the AFP physics program as it directly increases the sensitivity of the experiment. Thus, there are two critical requirements for the AFP pixel detector. First, the dead region of the sensor has to be minimized. Second, the device has to be able to cope with a very inhomogeneous radiation distribution. Recent results of the characterization and beam test studies of in-homogeneously irradiated 3D pixel sensors produced at CNM-Barcelona will be presented. (authors)

Selective formation of porous silicon

Science.gov (United States)

Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

1993-01-01

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Prospects for and tests of hadron calorimetry with silicon

Energy Technology Data Exchange (ETDEWEB)

Brau, James E. [Univ. of Oregon, OR (United States). Dept. of Physics; Gabriel, Tony A. [Oak Ridge National Lab., TN (United States); Rancoita, P. G. [INFN, Milan (Italy)

1989-03-01

Hadron calorimetry with silicon may provide crucial capabilities in experiments at the high luminosity, high energy colliders of the future, particularly due to silicon's fast intrinsic speed and absolute calibration. The important underlying processes of our understanding of hadron calorimeters are reviewed to set the framework for the presentation of recent calculations of the expected performance of silicon detector based hadron calorimeters. Such devices employing uranium are expected to achieve the compensation condition (that is, the ratio of the most probable electron signal to hadron signal (e/h) is approx.1.0) based on the understanding that has been derived from the uranium-liquid argon and uranium-plastic scintillator systems. In fact, even lead-silicon calorimeters are found to achieve the attractive value for the e/h ratio of 1.16 at 10 GeV. An experimental test of these predictions is underway at CERN by the SICAPO Collaboration. 64 refs., 19 figs.

Prospects for and tests of hadron calorimetry with silicon

International Nuclear Information System (INIS)

Brau, J.E.; Gabriel, T.A.; Rancoita, P.G.

1989-03-01

Hadron calorimetry with silicon may provide crucial capabilities in experiments at the high luminosity, high energy colliders of the future, particularly due to silicon's fast intrinsic speed and absolute calibration. The important underlying processes of our understanding of hadron calorimeters are reviewed to set the framework for the presentation of recent calculations of the expected performance of silicon detector based hadron calorimeters. Such devices employing uranium are expected to achieve the compensation condition (that is, the ratio of the most probable electron signal to hadron signal (e/h) is ∼1.0) based on the understanding that has been derived from the uranium-liquid argon and uranium-plastic scintillator systems. In fact, even lead-silicon calorimeters are found to achieve the attractive value for the e/h ratio of 1.16 at 10 GeV. An experimental test of these predictions is underway at CERN by the SICAPO Collaboration. 64 refs., 19 figs

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse

International Nuclear Information System (INIS)

Yoo, Jae-Hyuck; Zheng, Cheng; Grigoropoulos, Costas P; In, Jung Bin; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim

2015-01-01

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures. (paper)

Directed dewetting of amorphous silicon film by a donut-shaped laser pulse.

Science.gov (United States)

Yoo, Jae-Hyuck; In, Jung Bin; Zheng, Cheng; Sakellari, Ioanna; Raman, Rajesh N; Matthews, Manyalibo J; Elhadj, Selim; Grigoropoulos, Costas P

2015-04-24

Irradiation of a thin film with a beam-shaped laser is proposed to achieve site-selectively controlled dewetting of the film into nanoscale structures. As a proof of concept, the laser-directed dewetting of an amorphous silicon thin film on a glass substrate is demonstrated using a donut-shaped laser beam. Upon irradiation of a single laser pulse, the silicon film melts and dewets on the substrate surface. The irradiation with the donut beam induces an unconventional lateral temperature profile in the film, leading to thermocapillary-induced transport of the molten silicon to the center of the beam spot. Upon solidification, the ultrathin amorphous silicon film is transformed to a crystalline silicon nanodome of increased height. This morphological change enables further dimensional reduction of the nanodome as well as removal of the surrounding film material by isotropic silicon etching. These results suggest that laser-based dewetting of thin films can be an effective way for scalable manufacturing of patterned nanostructures.

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

BEAM LINE DESIGN FOR THE CERN HIRADMAT TEST FACILITY

CERN Document Server

Hessler, C; Goddard, B; Meddahi, M; Weterings, W

2009-01-01

The LHC phase II collimation project requires beam shock and impact tests of materials used for beam intercepting devices. Similar tests are also of great interest for other accelerator components such as beam entrance/exit windows and protection devices. For this purpose a dedicated High Radiation Material test facility (HiRadMat) is under study. This facility may be installed at CERN at the location of a former beam line. This paper describes the associated beam line which is foreseen to deliver a 450 GeV proton beam from the SPS with an intensity of up to 3×1013 protons per shot. Different beam line designs will be compared and the choice of the beam steering and diagnostic elements will be discussed, as well as operational issues.

Beam Line Design for the CERN Hiradmat Test Facility

CERN Document Server

Hessler, C; Goddard, B; Meddahi, M; Weterings, W

2010-01-01

The LHC phase II collimation project requires beam shock and impact tests of materials used for beam intercepting devices. Similar tests are also of great interest for other accelerator components such as beam entrance/exit windows and protection devices. For this purpose a dedicated High Radiation Material test facility (HiRadMat) is under study. This facility may be installed at CERN at the location of a former beam line. This paper describes the associated beam line which is foreseen to deliver a 450 GeV proton beam from the SPS with an intensity of up to 3×10**13 protons per shot. Different beam line designs will be compared and the choice of the beam steering and diagnostic elements will be discussed, as well as operational issues.

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

International Nuclear Information System (INIS)

Chen, J.; Sekiguchi, T.; Xie, R.; Ahmet, P.; Chikyo, T.; Yang, D.; Ito, S.; Yin, F.

2005-01-01

Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs

Waveguiding properties of Er-implanted silicon-rich oxides

International Nuclear Information System (INIS)

Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

2007-01-01

The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

Lamb wave propagation in monocrystalline silicon wafers.

Science.gov (United States)

Fromme, Paul; Pizzolato, Marco; Robyr, Jean-Luc; Masserey, Bernard

2018-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. Guided ultrasonic waves offer the potential to efficiently detect micro-cracks in the thin wafers. Previous studies of ultrasonic wave propagation in silicon focused on effects of material anisotropy on bulk ultrasonic waves, but the dependence of the wave propagation characteristics on the material anisotropy is not well understood for Lamb waves. The phase slowness and beam skewing of the two fundamental Lamb wave modes A 0 and S 0 were investigated. Experimental measurements using contact wedge transducer excitation and laser measurement were conducted. Good agreement was found between the theoretically calculated angular dependency of the phase slowness and measurements for different propagation directions relative to the crystal orientation. Significant wave skew and beam widening was observed experimentally due to the anisotropy, especially for the S 0 mode. Explicit finite element simulations were conducted to visualize and quantify the guided wave beam skew. Good agreement was found for the A 0 mode, but a systematic discrepancy was observed for the S 0 mode. These effects need to be considered for the non-destructive testing of wafers using guided waves.

Experimental testing on free vibration behaviour for silicone rubbers proposed within lumbar disc prosthesis.

Science.gov (United States)

Rotaru, Iuliana; Bujoreanu, Carmen; Bele, Adrian; Cazacu, Maria; Olaru, Dumitru

2014-09-01

This research was focused on the damping capacity study of two types of silicone rubbers proposed as layers within total lumbar disc prostheses of ball-and-socket model. In order to investigate the damping capacity, the two silicone rubber types mainly differing by the molecular mass of polymeric matrix and the filler content, as was emphasized by scanning electron microscopy and differential scanning calorimetry, were subjected to free vibration testing. Using an adapted experimental installation, three kinds of damping testing were realised: tests without samples and tests with three samples of each type of silicone rubber (69 ShA and 99 ShA). The free vibration tests were performed at a frequency of about 6 Hz using a weight of 11.8 kg. The relative damping coefficient was determined by measuring of two successive amplitudes on the vibrogram and calculating of the logarithmic decrement. The test results with silicone rubber samples showed a relative damping coefficient of 0.058 and respectively 0.077, whilst test results without samples showed a relative damping coefficient of 0.042. These silicone rubbers were found to have acceptable damping properties to be used as layers placed inside the prosthetic components. Copyright © 2014 Elsevier B.V. All rights reserved.

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

International Nuclear Information System (INIS)

Gentile, C.A.; Fan, H.M.; Hartfield, J.W.; Hawryluk, R.J.; Hegeler, F.; Heitzenroeder, P.J.; Jun, C.H.; Ku, L.P.; LaMarche, P.H.; Myers, M.C.; Parker, J.J.; Parsells, R.F.; Payen, M.; Raftopoulos, S.; Sethian, J.D.

2002-01-01

The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W · cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated with 500 nm thin-film silicon nitride (Si 3 N 4 ), has been fabricated. The window consists of 81 square panes with a thickness of 0.019 mm ± 0.001 mm. Stiffened (orthogonal) sections are 0.065 mm in width and 0.500 mm thick (approximate). Appended drawing (Figure 1) depicts the window configuration. Assessment of silicon (and silicon nitride) material properties and CAD modeling and analysis of the window design suggest that silicon may be a viable solution to inherent parameters and constraints

Segmented scintillation detectors with silicon photomultiplier readout for measuring antiproton annihilations

CERN Document Server

Sótér, A.; Kobayashi, T.; Barna, D.; Horváth, D.; Hori, M.

2014-01-01

The Atomic Spectroscopy and Collisions Using Slow Antiprotons (ASACUSA) experiment at the Antiproton Decelerator (AD) facility of CERN constructed segmented scintillators to detect and track the charged pions which emerge from antiproton annihilations in a future superconducting radiofrequency Paul trap for antiprotons. A system of 541 cast and extruded scintillator bars were arranged in 11 detector modules which provided a spatial resolution of 17 mm. Green wavelength-shifting fibers were embedded in the scintillators, and read out by silicon photomultipliers which had a sensitive area of 1 x 1 mm^2. The photoelectron yields of various scintillator configurations were measured using a negative pion beam of momentum p ~ 1 GeV/c. Various fibers and silicon photomultipliers, fiber end terminations, and couplings between the fibers and scintillators were compared. The detectors were also tested using the antiproton beam of the AD. Nonlinear effects due to the saturation of the silicon photomultiplier were seen a...

A doublet of 3" cylindrical silicon drift detectors in the CERES/NA45 experiment

CERN Document Server

Faschingbauer, U; Baur, R; Ceretto, F; Drees, A; Fraenkel, Zeev; Fuchs, C; Gatti, E; Glässel, P; Hemberger, M; Pérez de los Heros, C; Hess, F; Holl, P; Irmscher, D; Jacob, C; Kemmer, J; Minaev, Yu I; Panebratsev, Yu A; Pfeiffer, A; Ravinovich, I; Razin, S V; Rehak, P; Sampietro, M; Schükraft, Jürgen; Shimansky, S S; Socol, E; Specht, H J; Tel-Zur, G; Tserruya, Itzhak; Ullrich, T S; Voigt, C A; Wurm, J P; Yurevich, V I

1995-01-01

We report on the performance of a doublet of 3" cylindrical silicon drift detectors installed as an upgrade of the CERES/NA45 electron pair spectrometer for the Pb-beam at the CERN SPS. The silicon detectors provide external particle tracking and background rejection of conversions and close Dalitz pairs. Results on vertex reconstruction and rejection from Pb test-run in 1994 are presented.

Crystal Collimation Cleaning Measurements with Proton Beams in LHC

CERN Document Server

Rossi, Roberto; Andreassen, Odd Oyvind; Butcher, Mark; Dionisio Barreto, Cristovao Andre; Masi, Alessandro; Mirarchi, Daniele; Montesano, Simone; Lamas Garcia, Inigo; Redaelli, Stefano; Scandale, Walter; Serrano Galvez, Pablo; Rijllart, Adriaan; Valentino, Gianluca; CERN. Geneva. ATS Department

2016-01-01

During this MD, performed on July 29th, 2016, bent silicon crystal were tested with proton beams for a possible usage of crystal-assisted collimation. Tests were performed at both injection energy and flat top using horizontal and vertical crystal. Loss maps with crystals at 6.5 TeV were measured.

Double and triple crystal diffraction investigation on ion implanted and electron beam annealed silicon

International Nuclear Information System (INIS)

Servidori, M.; Cembali, F.; Winter, U.; Zaumseil, P.; Richter, H.

1985-01-01

Double (DCD) and triple crystal (TCD) diffractometry was used to investigate radiation damage produced in silicon by silicon bombardment and its evolution after electron beam annealing. The implantation processes were carried out at 60 keV energy and at doses of 0.5, 1, 5, 10, 50, 100, and 200 x 10 13 ions/cm 2 . As to the annealing treatments, an electron gun was used, operating in the ranges 7.5 to 24 W/cm 2 and 2 to 20 seconds. DCD rocking curves were analyzed by means of the dynamical theory of X-ray diffraction. The formalism introduced by Taupin was used to simulate the experimental intensity profiles. From the resulting best fits, the lattice strain vs. depth profiles were obtained, indicating an increase of the damage with dose for the as-implanted samples up to 1 x 10 14 cm -2 dose, whereas amorphous layers are produced for the higher doses. After annealing, lowering of the residual strain was observed to be directly proportional to the implanted dose. In particular, a complete recovery of the damage occurred for the 0.5 and 1 x 10 13 cm -2 samples. The results obtained by the fitting procedure were substantially independent from the power densities and times used during electron beam irradiation. TCD as a very sensitive method to investigate lattice defects after implantation was used to obtain information about the crystallographic perfection of the surface layer. The absence of diffuse scattering indicates that the annealed layers do not contain microdefects within the detection limits. (author)

Low-temperature epitaxy of silicon by electron beam evaporation

Energy Technology Data Exchange (ETDEWEB)

Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

2007-07-16

In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

Energy Technology Data Exchange (ETDEWEB)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L. [Nanjing Hydraulic Research Institute, Nanjing (China); Shen, M. X. [Hehai University, Nanjing (China)

2017-06-15

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Status and Prospect of Test Methods of Quality Silicone Water Repellent for Protecting Reinforced Concrete

International Nuclear Information System (INIS)

Sun, H. Y.; Yuan, Z. Y.; Yang, Z.; Shan, G. L.; Shen, M. X.

2017-01-01

Impregnating with quality silicone water repellent on the concrete surface is an effective method of protecting concrete. Quality silicone water repellent has been widely used in the engineering profession because of its desirable properties such as hydrophobicity, keeping concrete breathable and preserving the original appearance of the concrete. The companies in China that produce silicone water repellent are listed. Test methods in the specifications or standards about silicone water repellent in China are summed. The test methods relative to durability of concrete impregnated with silicone water repellent (such as resistant to chloride ion penetration, resistant to alkali, resistance to freezing and thawing and weather ability etc.) and the constructive quality (such as water absorption rate, impregnating depth and the dry velocity coefficient etc.) are compared and analyzed. The results indicate that there are differences among test methods relative to different specifications with the same index and therefore, confusion has ensued when selecting test methods. All test methods with the exception of the method of water absorption rate by using a Karsten flask are not non-destructive methods or conducted in a laboratory. Finally, further research on silicone water repellent during application is proposed.

Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I

Czech Academy of Sciences Publication Activity Database

Kohn, V.G.; Khikhlukha, Danila

2016-01-01

Roč. 72, May (2016), s. 349-356 ISSN 2053-2733 R&D Projects: GA MŠk EF15_008/0000162; GA MŠk ED1.1.00/02.0061 Grant - others:ELI Beamlines(XE) CZ.02.1.01/0.0/0.0/15_008/0000162; ELI Beamlines(XE) CZ.1.05/1.1.00/02.0061 Institutional support: RVO:68378271 Keywords : X-ray diffraction * silicon crystal * six-beam diffraction * section topography * computer simulations Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 5.725, year: 2016

Design of multi-megawatt actively cooled beam dumps for the Neutral-Beam Engineering Test Facility

International Nuclear Information System (INIS)

Paterson, J.A.; Koehler, G.; Wells, R.P.

1981-10-01

The Neutral Beam Engineering Test Facility will test Neutral Beam Sources up to 170 keV, 65 Amps, with 30 second beam-on times. For this application actively cooled beam dumps for both the neutral and ionized particles will be required. The dumps will be able to dissipate a wide range of power density profiles by utilizing a standard modular panel design which is incorporated into a moveable support structure. The thermal hydraulic design of the panels permit the dissipation of 2 kW/cm 2 anywhere on the panel surface. The water requirements of the dumps are optimized by restricting the flow to panel sections where the heat flux falls short of the design value. The mechanical design of the beam-dump structures is described along with tests performed on a prototype panel. The prototype tests were performed on two different panel designs, one manufactured by Mc Donnell Douglas (MDAC) the other by United Technologies (UT). The dissipation capabilities of the panels were tested at the critical regions to verify their use in the beam dump assemblies

Quality assurance of double-sided silicon microstrip sensors for the silicon tracking system in the CBM experiment at FAIR

Energy Technology Data Exchange (ETDEWEB)

Larionov, Pavel [Goethe Universitaet, Frankfurt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Silicon Tracking System (STS) is the core tracking detector of the CBM experiment at FAIR. The system's task is to reconstruct the trajectories of the charged particles produced in the beam-target interactions, provide their momentum determination, and enable the detection of decay topologies. The STS will comprise 1220 double-sided silicon microstrip sensors. After production each sensor will go through a number of Quality Assurance procedures to verify their validity for performance in the STS and also to confirm the manufacturer's data. In this talk, results of the quality assurance procedures that are being applied to the latest STS prototype sensors, including detailed tests of the quality of each single strip, long-term stability and preparations for volume tests during series production, are presented.

Final focus test beam

International Nuclear Information System (INIS)

1991-03-01

This report discusses the following: the Final Focus Test Beam Project; optical design; magnets; instrumentation; magnetic measurement and BPM calibration; mechanical alignment and stabilization; vacuum system; power supplies; control system; radiation shielding and personnel protection; infrastructure; and administration

Performance test results of ion beam transport for SST-1 neutral beam injector

Energy Technology Data Exchange (ETDEWEB)

Jana, M R; Mattoo, S K [Institute for Plasma Research Bhat, Gandhinagar-382428, Gujarat (India); Uhlemann, R, E-mail: mukti@ipr.res.i [Forschungszentrum Juelich, Institute fur Energieforschung IEF-4, Plasmaphysik D-52425 Juelich (Germany)

2010-02-01

A neutral beam injector is built at IPR to heat the plasma of SST-1 and its upgrade. It delivers a maximum beam power of 1.7 MW for 55 kV Hydrogen beam or 80 kV Deuterium beam. At lower beam voltage, the delivered power falls to 500 kW at 30 kV Hydrogen beam which is adequate to heat SST-1 plasma ions to {approx} 1 keV. Process of acceleration of ions to the required beam voltage, conversion of ions to neutrals and removal of un-neutralized ions and the beam diagnostic systems occupy a large space. The consequence is that linear extent of the neutral beam injector is at least a few meters. Also, port access provides a very narrow duct. Even a very good injector design and fabrication practices keep beam divergence at a very low but finite value. The result is beam transport becomes an important issue. Since a wide area beam is constructed by hundreds of beam lets, it becomes essential they be focused in such a way that beam transport loss is minimized. Horizontal and vertical focal lengths are two parameters, in addition to beam divergence, which give a description of the beam transport. We have obtained these two parameters for our injector by using beam transport code; making several hundred simulation runs by varying optical parameters of the beam. The selected parameters set has been translated into the engineering features of the extractor grid set of the ion source. Aperture displacement technique is used to secure the horizontal beam focusing at 5.4 m. Combination of both aperture displacement and inclining of two grid halves to {approx} 17 mrad are secured for vertical beam focusing at 7 m from earth grid of the ion source. The gaps between the design, engineered and performance tested values usually arise due to lack of exercising control over fabrication processes or due to inaccuracies in the assumption made in the model calculations of beam optics and beam transport. This has been the case with several injectors, notably with JET injector. To overcome

Nanostructures by ion beams

Science.gov (United States)

Schmidt, B.

Ion beam techniques, including conventional broad beam ion implantation, ion beam synthesis and ion irradiation of thin layers, as well as local ion implantation with fine-focused ion beams have been applied in different fields of micro- and nanotechnology. The ion beam synthesis of nanoparticles in high-dose ion-implanted solids is explained as phase separation of nanostructures from a super-saturated solid state through precipitation and Ostwald ripening during subsequent thermal treatment of the ion-implanted samples. A special topic will be addressed to self-organization processes of nanoparticles during ion irradiation of flat and curved solid-state interfaces. As an example of silicon nanocrystal application, the fabrication of silicon nanocrystal non-volatile memories will be described. Finally, the fabrication possibilities of nanostructures, such as nanowires and chains of nanoparticles (e.g. CoSi2), by ion beam synthesis using a focused Co+ ion beam will be demonstrated and possible applications will be mentioned.

LSST beam simulator

International Nuclear Information System (INIS)

Tyson, J A; Klint, M; Sasian, J; Claver, C; Muller, G; Gilmor, K

2014-01-01

It is always important to test new imagers for a mosaic camera before device acceptance and constructing the mosaic. This is particularly true of the LSST CCDs due to the fast beam illumination: at long wavelengths there can be significant beam divergence (defocus) inside the silicon because of the long absorption length for photons near the band gap. Moreover, realistic sky scenes need to be projected onto the CCD focal plane Thus, we need to design and build an f/1.2 re-imaging system. The system must simulate the entire LSST 1 operation, including a sky with galaxies and stars with approximately black-body spectra superimposed on a spatially diffuse night sky emission with its complex spectral features

Comparison between rad-hard standard float zone (FZ) and magnetic Czochralski (MCZ) silicon diodes in radiotherapy electron beam dosimetry

Energy Technology Data Exchange (ETDEWEB)

Santos, T.C. dos; Goncalves, J.A.C.; Vasques, M.M.; Tobias, C.C.B. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Tecnologia das Radiacoes; Neves-Junior, W.F.P.; Haddad, C.M.K. [Hospital Sirio Libanes, Sao Paulo, SP (Brazil). Sociedade Beneficente de Senhoras; Harkonen, J. [Helsinki University of Technology (Denmark). Helsinki Inst. of Physics

2010-07-01

Full text. The use of semiconductor detectors has increased in radiotherapy practice since 1980s due to mainly their fast processing time, small sensitive volume and high relative sensitivity to ionizing radiation. Other major advantages of Si devices are excellent repeatability, good mechanical stability, high spatial resolution and the energy independence of mass collision stopping powers ratios (between silicon and water for electron beams with energy from 4 up to 20 MeV). However, ordinary silicon devices are very prone to radiation damage effects. In the last years, the development of radiation tolerant silicon detectors for High Energy Physics experiments has overcome this drawback. In this work we present the preliminary results obtained with a rad-hard epitaxial silicon diode as on-line clinical electron beam dosimeter. The diodes with 25 mm{sup 2} active area, were housed in a PMMA probe and connected, in a photovoltaic mode, to a Keithley 6517B electrometer. During all measurements, the diodes were held between PMMA plates, placed at Zref and centered in a radiation field of 10 cm x 10 cm, with the SSD kept at 100 cm. The devices dosimetric response was evaluated for 6, 9, 12, 15, 18 e 21 MeV electron beams from a Siemens KD 2 Radiotherapy Linear Accelerator, located at Sirio-Libanes Hospital. The radiation induced current in the diodes was registered as a function of the exposure time during 60 s for a fixed 300 MU. To study the short term repeatability, current signals were registered for the same radiation dose, for all energies. The dose-response of the diodes was achieved through the integration of the current signals as a function of the exposure time. The results obtained in the energy range of 6 up to 21 MeV evidenced that, for the same average dose rate of 5.0 cGy/s, the current signals are very stable and repeatable in both cases. For all energies, data shows good instantaneous repeatability with a percentage variation coefficient better than 2

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Science.gov (United States)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

Science.gov (United States)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Data acquisition system for PLT Neutral Beam Test Stand

International Nuclear Information System (INIS)

Francis, J.E. Jr.; Hammons, C.E.

1977-01-01

The PLT Neutral Beam Test Stand at Oak Ridge National Laboratory was constructed to test and condition powerful neutral beam sources for the Princeton Large Torus experiment at Princeton Plasma Physics Laboratory. The data acquisition system for the test stand monitors the beam characteristics and power output to determine if the beam is operating at its design specifications. The high speed of the computer system is utilized to provide near-real-time analysis of experimental data. The analysis of the data is presented as numerical tabulation and graphic display

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

Science.gov (United States)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Beam tests of the 12 MHz RFQ RIB injector for ATLAS

International Nuclear Information System (INIS)

Clifft, B. E.; Kaye, R. A.; Kedzie, M.; Shepard, K. W.

1999-01-01

Beam tests of the ANL 12 MHz Radio-Frequency Quadruple (RFQ), designed for use as the initial element of an injector system for radioactive beams into the existing ATLAS accelerators, are in progress. Recent high-voltage tests of the RFQ without beam achieved the design intervane voltage of 100 kV CW, enabling beam tests with A/q as large as 132 using beams from the ANL Physics Division 4 MV Dynamitron accelerator facility. Although the RFQ was designed for bunched beams, initial tests have been performed with unbunched beams. Experiments with stable, unbunched beams of singly-charged 132 Xe and 84 Kr measured the output beam energy distribution as a function of the RFQ operating voltage. The observed energies are in excellent agreement with numerical beam simulations

Beam tests of the 12 MHz RFQ RIB injector for ATLAS.

Energy Technology Data Exchange (ETDEWEB)

Clifft, B. E.; Kaye, R. A.; Kedzie, M.; Shepard, K. W.

1999-05-06

Beam tests of the ANL 12 MHz Radio-Frequency Quadruple (RFQ), designed for use as the initial element of an injector system for radioactive beams into the existing ATLAS accelerators, are in progress. Recent high-voltage tests of the RFQ without beam achieved the design intervane voltage of 100 kV CW, enabling beam tests with A/q as large as 132 using beams from the ANL Physics Division 4 MV Dynamitron accelerator facility. Although the RFQ was designed for bunched beams, initial tests have been performed with unbunched beams. Experiments with stable, unbunched beams of singly-charged {sup 132}Xe and {sup 84}Kr measured the output beam energy distribution as a function of the RFQ operating voltage. The observed energies are in excellent agreement with numerical beam simulations.

The edge transient-current technique (E-TCT) with high energy hadron beam

Energy Technology Data Exchange (ETDEWEB)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor [J. Stefan Institute, Ljubljana (Slovenia); Mikuž, Marko [J. Stefan Institute, Ljubljana (Slovenia); University of Ljubljana (Slovenia); Muškinja, Miha; Zavrtanik, Marko [J. Stefan Institute, Ljubljana (Slovenia)

2016-09-21

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

Electron beam irradiation of porous silicon for application in micromachining and sensing

International Nuclear Information System (INIS)

Borini, S.; Rocchia, M.; Rossi, A.M.; Boarino, L.; Amato, G.

2005-01-01

We have studied the effect of the electron beam (EB) irradiation on porous silicon (PS), in order to find new possibilities for the local modification of the material at the submicrometer scale. The interaction between the accelerated electrons and PS has been investigated by means of two main techniques: infrared spectroscopy and profilometric measurements. All the results show that a strong increase of reactivity is induced on PS surface under exposure to the EB, due to the hydrogen desorption provoked by the incident electrons. We demonstrate that this phenomenon can be exploited for both the lateral structuring and the local functionalization of PS, at the submicrometer scale, depending on the different treatments applied to the samples after the EB bombardment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

Science.gov (United States)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Beam instrumentation for an ISOL test stand

International Nuclear Information System (INIS)

Mackenzie, G.H.; Dombsky, M.; Rawnsley, W.; Stanford, G.; Yin, Y.; Novikov, A.

1995-09-01

TRIUMF is constructing a test bed for the first stages of the proposed TISAC accelerated radioactive beam facility. The authors will present the requirements for the diagnostic system for this test stand and describe the design and development work underway. Scintillators, beamstops and a Faraday Cup have been tested using stable, mass analyzed, 12 keV beams of ions from mass 14 to 132. The design of a linear drive, with 10 microm resolution, for scanning wires and slits has begun

Beam instrumentation for an ISOL test stand

International Nuclear Information System (INIS)

Mackenzie, G.H.; Dombsky, M.; Rawnsley, W.; Stanford, G.; Yin, Y.; Novikov, A.

1995-09-01

TRIUMF is constructing a test bed for the first stages of the proposed TISAC accelerated radioactive beam facility. We will present the requirements for the diagnostic system for this test stand and describe the design and development work underway. Scintillators, beamstops and Faraday Cup have been tested using stable, mass analyzed, 12 keV beams of ions from mass 14 to 132. The design of a linear drive, with 10 μm resolution, for scanning wires and slits has begun. (author)

Performance of a beam telescope using double sided silicon microstrip detectors

International Nuclear Information System (INIS)

Fischer, P.; Menke, S.; Wermes, N.

1995-04-01

A beam telescope consisting of four double sided, DC coupled microstrip detectors with VLSI readout electronics has been built and tested in a 70 GeV μ - beam at CERN. A signal to noise ratio of 53:1 and a spatial resolution of 2.7 μm (junction side) and 4.8 μm (ohmic side) have been observed on the best detectors. A telescope performance for a particle track of σ xy =2-3 μm and σ slope =2-3 μrad on the front face of a test object was achieved. (orig.)

Building blocks for future detectors: Silicon test masses and 1550 nm laser light

International Nuclear Information System (INIS)

Schnabel, R; Britzger, M; Burmeister, O; Danzmann, K; Duck, J; Eberle, T; Friedrich, D; Luck, H; Mehmet, M; Steinlechner, S; Willke, B; Brueckner, F; Nawrodt, R

2010-01-01

Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection.

A test beam upgrade based on the BEPC-LINAC

International Nuclear Information System (INIS)

Li Jiacai; Wu Yuanming; Cui Xiangzong; Zhang Liangsheng; Zhou Baoqing; Liu Zhengquan; Zhang Shaoping; Sun Changchun; Zhang Zhuxiang; Zhang Caidi; Zheng Linsheng; Liu Shixing; Shen Ji; Yin Zejie; Zhang Yongming; Chen Ziyu

2004-01-01

A total of three beam lines, E1, E2 and E3 have based on the LINAC of BEPC. The E1 beam is to be used for intense slow-positron facility. The E2 is a primary positron or electron beam with an energy of 1.3-1.5 GeV. The E3 is a secondary electron or pion test beam with a momentum can be adjustable continuously. The position accuracy of a detected particle is 0.2-0.4 mm with an event rate of 3 - 4 Hz. This beam has been successfully used for some detectors beam test. (author)

Thermal endurance tests on silicone rubber specimens

International Nuclear Information System (INIS)

Warburton, C.

1977-07-01

Thermal endurance tests have been performed on a range of silicone rubber specimens at temperature above 300 0 C. It is suggested that the rubber mix A2426, the compound from which Wylfa sealing rings are manufactured, will fail at temperatures above 300 0 C within weeks. Hardness measurements show that this particular rubber performs in a similar manner to Walker's S.I.L./60. (author)

Characterization of the Goubau line for testing beam diagnostic instruments

Science.gov (United States)

Kim, S. Y.; Stulle, F.; Sung, C. K.; Yoo, K. H.; Seok, J.; Moon, K. J.; Choi, C. U.; Chung, Y.; Kim, G.; Woo, H. J.; Kwon, J.; Lee, I. G.; Choi, E. M.; Chung, M.

2017-12-01

One of the main characteristics of the Goubau line is that it supports a low-loss, non-radiated surface wave guided by a dielectric-coated metal wire. The dominant mode of the surface wave along the Goubau line is a TM01 mode, which resembles the pattern of the electromagnetic fields induced in the metallic beam pipe when the charged particle beam passes through it. Therefore, the Goubau line can be used for the preliminary bench test and performance optimization of the beam diagnostic instruments without requiring charged particle beams from the accelerators. In this paper, we discuss the basic properties of the Goubau line for testing beam diagnostic instruments and present the initial test results for button-type beam position monitors (BPMs). The experimental results are consistent with the theoretical estimations, which indicates that Goubau line allows effective testing of beam diagnostic equipment.

Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature

Energy Technology Data Exchange (ETDEWEB)

Taioli, Simone [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Chemistry, University of Bologna, Bologna (Italy); Garberoglio, Giovanni [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Simonucci, Stefano [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Physics, University of Camerino, Camerino (Italy); Beccara, Silvio a [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Aversa, Lucrezia [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Nardi, Marco [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Institut fuer Physik, Humboldt-Universitaet zu Berlin, Berlin (Germany); Verucchi, Roberto [Institute of Materials for Electronics and Magnetism, FBK-CNR, Trento (Italy); Iannotta, Salvatore [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Parma (Italy); Dapor, Maurizio [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Padova (Italy); and others

2013-01-28

In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nanostructures with different stoichiometric character. We show that in these out-of-equilibrium conditions, it is necessary to go beyond the standard implementations of density functional theory, as ab initio methods based on the Born-Oppenheimer approximation fail to capture the excited-state dynamics. In particular, we analyse the Si-C{sub 60} collision within the non-adiabatic nuclear dynamics framework, where stochastic hops occur between adiabatic surfaces calculated with time-dependent density functional theory. This theoretical description of the C{sub 60} impact on the Si surface is in good agreement with our experimental findings.

Tests of a Roman Pot Prototype for the TOTEM Experiment

CERN Document Server

Deile, M.; Anelli, G.M.; Antchev, G.A.; Ayache, M.; Caspers, F.; Dimovasili, E.; Dinapoli, R.; Drouhin, F.D.; Eggert, K.; Escourrou, L.; Fochler, O.; Gill, K.; Grabit, R.; Haug, F.; Jarron, P.; Kaplon, J.; Kroyer, T.; Luntama, T.; Macina, D.; Mattelon, E.; Mirabito, L.; Niewiadomski, H.; Noschis, E.P.; Oriunno, M.; Park, A.; Perrot, A.L.; Pirotte, O.; Quetsch, J.M.; Regnier, F.; Ruggiero, G.; Saramad, S.; Siegrist, P.; Snoeys, W.; Souissi, T.; Szczygiel, R.; Troska, J.; Vasey, F.; Verdier, A.; Avati, V.; Jarvinen, M.; Kalliokoski, M.; Kalliopuska, J.; Kurvinen, K.; Lauhakangas, R.; Oljemark, F.; Orava, R.; Palmieri, V.; Saarikko, H.; Soininen, A.; Osterberg, K.; Berardi, V.; Catanesi, M.G.; Radicioni, E.; Boccone, V.; Bozzo, M.; Buzzo, A.; Cuneo, S.; Ferro, F.; Macri, M.; Minutoli, S.; Morelli, A.; Musico, P.; Negri, M.; Santroni, A.; Sette, G.; Sobol, A.; Da Via, C.; Hasi, J.; Kok, A.; Watts, S.; Kasper, J.; Kundrat, V.; Lokajicek, M.; Smotlacha, J.

2005-01-01

The TOTEM collaboration has developed and tested the first prototype of its Roman Pots to be operated in the LHC. TOTEM Roman Pots contain stacks of 10 silicon detectors with strips oriented in two orthogonal directions. To measure proton scattering angles of a few microradians, the detectors will approach the beam centre to a distance of 10 sigma + 0.5 mm (= 1.3 mm). Dead space near the detector edge is minimised by using two novel "edgeless" detector technologies. The silicon detectors are used both for precise track reconstruction and for triggering. The first full-sized prototypes of both detector technologies as well as their read-out electronics have been developed, built and operated. The tests took place first in a fixed-target muon beam at CERN's SPS, and then in the proton beam-line of the SPS accelerator ring. We present the test beam results demonstrating the successful functionality of the system despite slight technical shortcomings to be improved in the near future.

Tests of a Roman Pot prototype for the TOTEM experiment

Science.gov (United States)

Deile, M.; Alagoz, E.; Anelli, G.; Antchev, G.; Ayache, M.; Caspers, F.; Dimovasili, E.; Dinapoli, R.; Drouhin, F.; Eggert, K.; Escourrou, J.L; Fochler, O.; Gill, K.; Grabit, R.; Haung, F.; Jarron, P.; Kaplon, J.; Kroyer, T.; Luntama, T.; Macina, D.; Mattelon, E.; Niewiadomski, H.; Mirabito, L.; Noschis, E.P.; Oriunno, M.; Park, a.; Perrot, A.-L.; Pirotte, O.; Quetsch, J.M.; Regnier, F.; Ruggiero, G.; Saramad, S.; Siegrist, P.; Snoeys, W.; sSouissi, T.; Szczygiel, R.; Troska, J.; Vasey, F.; Verdier, A.; Da Vià, C.; Hasi, J.; Kok, A.; Watts, S.; Kašpar, J.; Kundrát, V.; Lokajíček, M.V.; Smotlacha, J.; Avati, V.; Järvinen, M.; Kalliokoski, M.; Kalliopuska, J.; Kurvinen, K.; Lauhakangas, R.; Oljemark, F.; Orava, R.; Österberg, K.; Palmieri, V.; Saarikko, H.; Soininen, A.; Boccone, V.; Bozzo, M.; Buzzo, A.; Cuneo, S.; Ferro, F.; Macrí, M.; Minutoli, S.; Morelli, A.; Musico, P.; Negri, M.; Santroni, A.; Sette, G.; Sobol, A.; sBerardi, V.; Catanesi, M.G.; Radicioni, E.

The TOTEM collaboration has developed and tested the first prototype of its Roman Pots to be operated in the LHC. TOTEM Roman Pots contain stacks of 10 silicon detectors with strips oriented in two orthogonal directions. To measure proton scattering angles of a few microradians, the detectors will approach the beam centre to a distance of 10 sigma + 0.5 mm (= 1.3 mm). Dead space near the detector edge is minimised by using two novel "edgeless" detector technologies. The silicon detectors are used both for precise track reconstruction and for triggering. The first full-sized prototypes of both detector technologies as well as their read-out electronics have been developed, built and operated. The tests took place first in a fixed-target muon beam at CERN's SPS, and then in the proton beam-line of the SPS accelerator ring. We present the test beam results demonstrating the successful functionality of the system despite slight technical shortcomings to be improved in the near future.

Cryogenic beam loss monitoring for the LHC

International Nuclear Information System (INIS)

Kurfürst, C.

2013-01-01

. All the selected detector technologies are based on ionisation and subsequent charge carrier transport within the detector bulk. Therefore laboratory measurements were performed to measure the charge carrier characteristics in the detector material in the temperature range from 1.6 to 300 K. In the silicon detector, charges were generated using laser light and alpha-particles. For diamond detectors the measurements were done with alpha-particles only. The temperature dependence of the drift velocity and of the mobility of the charge carriers was measured. To measure the detector’s characteristics with respect to particle detection at liquid helium temperatures, low intensity beam tests with minimum ionising protons were carried out. They allowed to prove that all tested detectors work at 1.9 K. The silicon detector Full Width Half Maximum (FWHM) of the signal from a MIP is 2.5 ± 0.7 ns at liquid helium temperatures. For the diamond detector the FWHM is 3.6 ± 0.8 ns. The signal width decrease from room temperature to liquid helium temperatures is of 54 % for silicon material and 28 % for diamond material. This allows bunch by bunch resolution of the LHC losses, as already demonstrated at room temperature. The radiation hardness of the solid-state detectors over 20 years of LHC operation was addressed during high intensity beam tests carried out at CERN in a liquid helium environment. A complete cryogenic system was installed in the irradiation area of the CERN East Hall. Data from the continuous monitoring of the signal development during irradiation and measurements from test cycles enabled the advantages and disadvantages of each detector technology to be identified. The expected reduction in detector sensitivity over 20 years (2 MGy) of LHC operation is of a factor of 14 ± 3 for the diamond detector. For the silicon detector the expected signal reduction is of a factor of 25 ± 5. Using liquid helium as particle detection medium has the advantage of no

Beam tests of the ZEUS barrel calorimeter

Energy Technology Data Exchange (ETDEWEB)

Bernstein, A; Bienz, T; Caldwell, A; Chen, L; Derrick, M; Gialas, I; Hamri, A; Imlay, R; Kartik, S; Kim, H J; Kinnel, T; Kreutzmann, H; Li, C G; Lim, J N; Loveless, R; Lu, B; Mallik, U; McLean, K W; McNeil, R; Metcalf, W; Musgrave, B; Oh, B Y; Park, S; Parsons, J A; Reeder, D; Repond, J; Ritz, S; Roco, M T.P.; Sandler, P H; Sciulli, F; Smith, W H; Talaga, R L; Tzanakos, G; Wai, L; Wang, M Z; Whitmore, J; Wu, J; Yang, S [Argonne National Lab., IL (United States) Columbia Univ., New York, NY (United States) Nevis Labs., Irvington-on-Hudson, NY (United States) Univ. of Iowa, Iowa City, IA (United States) Louisiana State Univ., Baton Rouge, LA (United States) Ohio State Univ., Columbus, OH (United States) Pennsylvania State Univ., University Park, PA (United States) Virginia Polytechnic Inst., and State Univ., Blacksburg, VA (United States) Univ. of Wisconsin, Madison, WI (United States)

1993-11-15

A fully compensating uranium-scintillator calorimeter was constructed for the ZEUS detector at HERA. Several of the barrel calorimeter modules were subjected to beam tests at Fermilab before shipping them to DESY for installation. The calibrations of the modules used beams of electrons and hadrons, measuring the uniformity of the response, and checking the resolution. The runs also provided opportunity to test a large fraction of the actual ZEUS calorimeter readout system in an integrated beam environment more than one year before HERA turn on. The experiment utilized two computer controlled mechanical structures, one of which was capable of holding up to four modules in order to study shower containment, and a magnetic spectrometer with a high resolution beam tracking system. During two running periods, beams of 6 to 110 GeV containing e, [mu], [pi], and anti p were used. The results show energy resolutions of 35%/[radical]E for hadrons and 19%/[radical]E for electrons, uniformities at the 1% level, energy nonlinearity less than 1%, and equal response for electrons and hadrons. (orig.)

Construction and testing of a large scale prototype of a silicon tungsten electromagnetic calorimeter for a future lepton collider

International Nuclear Information System (INIS)

Rouëné, Jérémy

2013-01-01

The CALICE collaboration is preparing large scale prototypes of highly granular calorimeters for detectors to be operated at a future linear electron positron collider. After several beam campaigns at DESY, CERN and FNAL, the CALICE collaboration has demonstrated the principle of highly granular electromagnetic calorimeters with a first prototype called physics prototype. The next prototype, called technological prototype, addresses the engineering challenges which come along with the realisation of highly granular calorimeters. This prototype will comprise 30 layers where each layer is composed of four 9×9 cm 2 silicon wafers. The front end electronics is integrated into the detector layers. The size of each pixel is 5×5 mm 2 . This prototype enters its construction phase. We present results of the first layers of the technological prototype obtained during beam test campaigns in spring and summer 2012. According to these results the signal over noise ratio of the detector exceeds the R and D goal of 10:1

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

International Nuclear Information System (INIS)

Poley, Luise; Blue, Andrew; Bates, Richard

2016-03-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1 x 10 35 cm -2 s -1 after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb -1 , requiring the tracking detectors to withstand hadron equivalences to over 1 x 10 16 1 MeV neutrons per cm 2 . With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). Sub-strip resolution of the 74.5 μm strips was achieved for both detectors. Investigation of the p-stop diffusion layers between strips is shown in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stops regions between the strips rather than the strip pitch. The collected signal allowed for the identification of operating thresholds for both devices, making it possible to compare signal response between different versions of silicon strip detector modules.

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Energy Technology Data Exchange (ETDEWEB)

Poley, Luise [DESY, Hamburg (Germany); Blue, Andrew; Bates, Richard [Glasgow Univ. (United Kingdom). SUPA School of Physics and Astronomy; and others

2016-03-15

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity, totalling 1 x 10{sup 35} cm{sup -2}s{sup -1} after 10 years of operation. A consequence of this increased luminosity is the expected radiation damage at 3000 fb{sup -1}, requiring the tracking detectors to withstand hadron equivalences to over 1 x 10{sup 16} 1 MeV neutrons per cm{sup 2}. With the addition of increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (Endcap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). Sub-strip resolution of the 74.5 μm strips was achieved for both detectors. Investigation of the p-stop diffusion layers between strips is shown in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stops regions between the strips rather than the strip pitch. The collected signal allowed for the identification of operating thresholds for both devices, making it possible to compare signal response between different versions of silicon strip detector modules.

A time-pulsed positronium beam and a study of oxides on silicon using positrons

International Nuclear Information System (INIS)

Khatri, R.K.

1993-01-01

The studies on rare gas solid moderators were carried out with a 350 μCi 22 Na radioactive source. The corrected efficiency for neon moderator in conical geometrical configuration was as high as (1.4 ± 0.2)%. The conical configuration moderator performed better by a factor of (2.2 ± 0.2) than the cylindrical configuration. A time pulsed positron beam was built to carry out investigations on the positronium formation processes and positronium beam. This beam has the capability to store low energy e + in a magnetic bottle, with a magnetic bottle at one end and an electrostatic mirror at the other. These stored e + are then bunched to form a pulse with a buncher. The bunched beam had a FWHM of 17 nsec and contained 1 to 2 e + /pulse. A thin carbon foil of 50 angstrom thickness was used for positronium formation by process of charge exchange. Positronium Annihilation Spectroscopy (PAS) was utilized to carry out studies on the activation energy of hydrogen at the interface of oxide and silicon substrate and the effect of irradiation on the oxides in SiO 2 /Si(100) sample. The activation energy of hydrogen at the interface of SiO 2 /Si(100) samples with n- and p-type substrate was measured to be 2.60(6) eV and 2.47(6) eV respectively. The investigations of the samples irradiated with x-ray and γ-ray led to the first time identification of creation of E' centers with PAS

Numerical simulation of electron-beam-induced current near a silicon grain boundary and impact of a p-n junction space charge region

Energy Technology Data Exchange (ETDEWEB)

Corkish, R.; Altermatt, P.P.; Heiser, G. [Photovoltaics Special Research Centre, University of New South Wales, 2052 Sydney (Australia)

2001-01-01

Three-dimensional numerical simulations of electron-beam-induced current (EBIC) near a vertical silicon grain boundary are demonstrated. They are compared with an analytical model which excludes the effect of carrier generation other than in the bulk base region of a solar cell structure. We demonstrate that in a wide range of solar cell structures recombination in the space charge region (SCR) significantly affects the EBIC results and hence needs to be included in the data evaluation. Apart from these findings, simulations of a realistic silicon solar cell structure (thick emitter, field-dependent mobility, etc.) are demonstrated.

Characterization of electron beam evaporated carbon films and compound formation on titanium and silicon

International Nuclear Information System (INIS)

Luthin, J.; Linsmeier, C.

2001-01-01

The formation of carbon-based mixed materials is unavoidable on the plasma-facing components (e.g. first wall and divertor) of fusion devices when carbon is used together with other materials. On the surfaces of these components very different conditions with respect to particle and energy impact occur. To predict the mixed material formation under these conditions the precise knowledge of the fundamental mechanisms governing these interactions is essential. In this paper we present the results of carbon interaction with titanium and silicon, as model substances for metallic and covalent carbides, during thermal treatment. To perform basic studies of the reactions of carbon with different elements, thin carbon films are produced by electron beam evaporation on the different substrates under UHV conditions. All measurements for chemical analysis are performed using X-ray photoelectron spectroscopy (XPS). We discuss first the properties of the deposited carbon films. The carbon films are characterized on inert gold surfaces and are compared to bulk graphite. Annealing of the carbon films up to 970 K leads to a transition from a disordered carbon network into a graphitic structure. Preparation of carbon films at room temperature on titanium or silicon leads to a limited carbide formation at the carbon/substrate interface. Carbon deposited in excess of several monolayers is present in elementary form. Annealing of the samples leads to complete carbidization consuming the available carbon in both cases. Titanium reacts to TiC and additional substoichiometric carbide, silicon forms SiC with exact stoichiometry. (orig.)

Lateral epitaxial overgrowth of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy

International Nuclear Information System (INIS)

Wang, Yongjin; Hu, Fangren; Hane, Kazuhiro

2011-01-01

We report here the lateral epitaxial overgrowth (LEO) of GaN on a patterned GaN-on-silicon substrate by molecular beam epitaxy (MBE) growth with radio frequency nitrogen plasma as a gas source. Two kinds of GaN nanostructures are defined by electron beam lithography and realized on a GaN substrate by fast atom beam etching. The epitaxial growth of GaN by MBE is performed on the prepared GaN template, and the selective growth of GaN takes place with the assistance of GaN nanostructures. The LEO of GaN produces novel GaN epitaxial structures which are dependent on the shape and the size of the processed GaN nanostructures. Periodic GaN hexagonal pyramids are generated inside the air holes, and GaN epitaxial strips with triangular section are formed in the grating region. This work provides a promising way for producing novel GaN-based devices by the LEO of GaN using the MBE technique

Fatigue Testing of Maglev-Hybrid Box Beam

Science.gov (United States)

2009-03-02

04142009 3. DATES COVERED: (From - To) 23052006-14092008 4. TITLE AND SUBTITLE Fatigue Testing of Maglev -Hybrid Box Beam 5a. CONTRACT NUMBER NA...was previously built under collaboration between Maglev Inc. and Lehigh University. The girder was instrumented with strain gages and LVDT’s to monitor...report March 2,2009 Contract N00014-06-1-0872 Project: Fatigue Testing of Maglev -Hybrid Box Beam Prepared by Dr. J.L. Grenestedt and Dr. R. Sause

Imaging monolithic silicon detector telescopes

International Nuclear Information System (INIS)

Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

2008-01-01

We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

Quality Tests of Double-Sided Silicon Strip Detectors

CERN Document Server

Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

1997-01-01

The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

FEM simulation of static loading test of the Omega beam

Science.gov (United States)

Bílý, Petr; Kohoutková, Alena; Jedlinský, Petr

2017-09-01

The paper deals with a FEM simulation of static loading test of the Omega beam. Omega beam is a precast prestressed high-performance concrete element with the shape of Greek letter omega. Omega beam was designed as a self-supporting permanent formwork member for construction of girder bridges. FEM program ATENA Science was exploited for simulation of load-bearing test of the beam. The numerical model was calibrated using the data from both static loading test and tests of material properties. Comparison of load-displacement diagrams obtained from the experiment and the model was conducted. Development of cracks and crack patterns were compared. Very good agreement of experimental data and the FEM model was reached. The calibrated model can be used for design of optimized Omega beams in the future without the need of expensive loading tests. The calibrated material model can be also exploited in other types of FEM analyses of bridges constructed with the use of Omega beams, such as limit state analysis, optimization of shear connectors, prediction of long-term deflections or prediction of crack development.

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

CERN Document Server

Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

2013-01-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.

Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au

International Nuclear Information System (INIS)

Chee, See Wee; Kammler, Martin; Balasubramanian, Prabhu; Reuter, Mark C.; Hull, Robert; Ross, Frances M.

2013-01-01

We use focused beams of Ga + , Au + and Si ++ ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga + and Au + , precipitates remain after recrystallization, while for Si ++ , dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. - Highlights: ► Ga + , Au + and Si ++ were implanted into thin membranes of Si. ► Samples were imaged and annealed in situ in a transmission electron microscope. ► Focused ion beam implantation created an array of amorphous spots. ► After recrystallization, precipitates form for Ga + and Au + , dislocation loops for Si ++ . ► Controlled placement of the dislocation loops possible

Silicon dioxide etching process for fabrication of micro-optics employing pulse-modulated electron-beam-excited plasma

International Nuclear Information System (INIS)

Takeda, Keigo; Ohta, Takayuki; Ito, Masafumi; Hori, Masaru

2006-01-01

Silicon dioxide etching process employing a pulse-modulated electron-beam-excited plasma (EBEP) has been developed for a fabrication process of optical micro-electro-mechanical systems (MEMSs). Nonplanar dielectric materials were etched by using self-bias induced by the electron beam generating the plasma. In order to investigate the effect of pulse modulation on electron beam, plasma diagnostics were carried out in the EBEP employing C 4 F 8 gas diluted with Ar gas by using a Langmuir single probe and time resolved optical emission spectroscopy. It was found that the pulse-modulated EBEP has an excellent potential to reduce the plasma-induced thermal damage on a photoresist film on a substrate to get the uniform etching and the anisotropic SiO 2 etching in comparison with the conventional EBEP. The pulse-modulated EBEP enabled us to get the high etch rate of SiO 2 of 375 nm/min without any additional bias power supply. Furthermore, the microfabrication on the core area of optical fiber was realized. These results indicate that the pulse-modulated EBEP will be a powerful tool for the application to optical MEMS process

Beam tests and operation of superconducting cavities

International Nuclear Information System (INIS)

Akai, Kazunori

1990-01-01

Beam tests and operation of superconducting cavities conducted since the third workshop on RF superconductivity (Argonne, Sep. 1987) are reported in this paper. The paper is concerned particularly with electron machines. Storage and acceleration of the beam are discussed, focusing on the CERN test in SPS, the DESY test in PETRA, the superconducting injector at Darmstadt, and the KEK beam tests in T-AR. Then, long-term performance of the cavity in the ring is discussed focusing on Eacc (max) and O-value, environmental conditions, and operational experience in T-MR. RF controllability is addressed, centering on the Robinson stability, cavity tuning loop, quench detection and interlocks, recovery procedure, field calibration, and phase adjustment. Higher order modes are also discussed. Superconducting cavities have been operated successfully in accelerators. It has been confirmed that the superconducting cavities can be used stably for experimental use. For more than 5000 hours the cavities have indicated no essential degradation of the cavity performance. The study of long-term performance should be continued in longer range of period. (N.K.)

Data acquisition system for medium power neutral beam test facility

International Nuclear Information System (INIS)

Stewart, C.R. Jr.; Francis, J.E. Jr.; Hammons, C.E.; Dagenhart, W.K.

1978-06-01

The Medium Power Neutral Beam Test Facility at Oak Ridge National Laboratory was constructed in order to develop, test, and condition powerful neutral beam lines for the Princeton Large Torus experiment at Princeton Plasma Physics Laboratory. The data acquisition system for the test stand monitors source performance, beam characteristics, and power deposition profiles to determine if the beam line is operating up to its design specifications. The speed of the computer system is utilized to provide near-real-time analysis of experimental data. Analysis of the data is presented as numerical tabulation and graphic display

Personal extrapolation of CDF test beam use to the SSC

International Nuclear Information System (INIS)

Nodulman, L.

1986-01-01

The author's personal experience in test beam usage at CDF is used to predict SSC needs at the point of turn-on. It is concluded that the test beam demand will reflect the scale of effort involved in SSC detectors rather than the total number of them. Provision for later expansion is recommended. It is also recommended that the test beam facilities, as well as detector electronics, should reflect the available dynamic range; particularly, a single high energy beam derived from the SSC could be shared by several groups

Personal extrapolation of CDF test beam use to the SSC

Energy Technology Data Exchange (ETDEWEB)

Nodulman, L.

1986-06-23

The author's personal experience in test beam usage at CDF is used to predict SSC needs at the point of turn-on. It is concluded that the test beam demand will reflect the scale of effort involved in SSC detectors rather than the total number of them. Provision for later expansion is recommended. It is also recommended that the test beam facilities, as well as detector electronics, should reflect the available dynamic range; particularly, a single high energy beam derived from the SSC could be shared by several groups. (LEW)

3D silicon strip detectors

International Nuclear Information System (INIS)

Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-06-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

Pulsed beam tests at the SANAEM RFQ beamline

Science.gov (United States)

Turemen, G.; Akgun, Y.; Alacakir, A.; Kilic, I.; Yasatekin, B.; Ergenlik, E.; Ogur, S.; Sunar, E.; Yildiz, V.; Ahiska, F.; Cicek, E.; Unel, G.

2017-07-01

A proton beamline consisting of an inductively coupled plasma (ICP) source, two solenoid magnets, two steerer magnets and a radio frequency quadrupole (RFQ) is developed at the Turkish Atomic Energy Authority’s (TAEA) Saraykoy Nuclear Research and Training Center (SNRTC-SANAEM) in Ankara. In Q4 of 2016, the RFQ was installed in the beamline. The high power tests of the RF power supply and the RF transmission line were done successfully. The high power RF conditioning of the RFQ was performed recently. The 13.56 MHz ICP source was tested in two different conditions, CW and pulsed. The characterization of the proton beam was done with ACCTs, Faraday cups and a pepper-pot emittance meter. Beam transverse emittance was measured in between the two solenoids of the LEBT. The measured beam is then reconstructed at the entrance of the RFQ by using computer simulations to determine the optimum solenoid currents for acceptance matching of the beam. This paper will introduce the pulsed beam test results at the SANAEM RFQ beamline. In addition, the high power RF conditioning of the RFQ will be discussed.

Wedge silicon detectors for the inner trackering system of CMS

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

1997-01-01

One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test

CERN Document Server

AUTHOR|(CDS)2091318; Stamoulis, G; Vavougios, D

The Beam Loss Monitoring system of the Large Hadron Collider is responsible for the pro- tection of the machine from damage and for the prevention of a magnet quench. Near the interaction points of the LHC, in the triplet magnets area, the BLMs are sensitive to the collision debris, limiting their ability to distinguish beam loss signal from signal caused due to the collision products. Placing silicon & diamond detectors inside the cold mass of the mag- nets, in liquid helium temperatures, would provide significant improvement to the precision of the measurement of the energy deposition in the superconducting coil of the magnet. To further study the signal formation and the shape of the transient current pulses of the aforementioned detectors in cryogenic temperatures, a simulation application has been developed. The application provides a fast way of determining the electric field components inside the detectors bulk and then introduces an initial charge distribution based on the properties of the radiat...

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

Science.gov (United States)

Lin, T. L.; Liu, J. K.; Sadwick, L.; Wang, K. L.; Kao, Y. C.

1987-01-01

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Structural testing of the technology integration box beam

Science.gov (United States)

Griffin, C. F.

1992-01-01

A full-scale section of a transport aircraft wing box was designed, analyzed, fabricated, and tested. The wing box section, which was called the technology integration box beam, contained blade stiffened covers and T-stiffened channel spars constructed using graphite/epoxy materials. Covers, spars, and the aluminum ribs were assembled using mechanical fasteners. The box beam was statically tested for several loading conditions to verify the stiffness and strength characteristics of the composite wing design. Failure of the box beam occurred at 125 percent of design limit load during the combined upbending and torsion ultimate design load test. It appears that the failure initiated at a stiffener runout location in the upper cover which resulted in rupture of the upper cover and portions of both spars.

Beam test with the HIMAC RF control system

International Nuclear Information System (INIS)

Kanazawa, M.; Sato, K.; Itano, A.

1992-01-01

RF system of the HIMAC synchrotron has been developed and tested in the factory. With the high power system, we could sweep the acceleration frequency from 1MHz to 8MHz with the acceleration voltage of 6KV. The performance of the RF control system has been confirmed with a developed simulator of the synchrotron oscillation. Following these two tests in the factory, we had a beam test of the RF control system at TARN-II in INS (Institute for Nuclear Study, University of Tokyo). This paper describes the beam test and its results. (author)

Study of the interactions of pions in the CALICE silicon-tungsten calorimeter prototype

CERN Document Server

Adloff, C.; Repond, J.; Yu, J.; Eigen, G.; Mikami, Y.; Watson, N.K.; Wilson, J.A.; Goto, T.; Mavromanolakis, G.; Thomson, M.A.; Ward, D.R.; Yan, W.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Apostolakis, J.; Ribon, A.; Uzhinskiy, V.; Benyamna, M.; Carloganu, C.; Fehr, F.; Gay, P.; Blazey, G.C.; Chakraborty, D.; Dyshkant, A.; Francis, K.; Hedin, D.; Lima, J.G.; Zutshi, V.; Hostachy, J.Y.; Krastev, K.; Morin, L.; D'Ascenzo, N.; Cornett, U.; David, D.; Fabbri, R.; Falley, G.; Gadow, K.; Garutti, E.; Gottlicher, P.; Jung, T.; Karstensen, S.; Lucaci-Timoce, A.I.; Lutz, B.; Meyer, N.; Morgunov, V.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Vargas-Trevino, A.; Wattimena, N.; Wendt, O.; Feege, N.; Groll, M.; Haller, J.; Heuer, R.D.; Morozov, S.; Richter, S.; Samson, J.; Kaplan, A.; Schultz-Coulon, H.C.; Shen, W.; Tadday, A.; Bilki, B.; Norbeck, E.; Onel, Y.; Kim, E.J.; Kim, G.; Kim, D.W.; Lee, K.; Lee, S.C.; Kawagoe, K.; Tamura, Y.; Dauncey, P.D.; Magnan, A.M.; Yilmaz, H.; Zorba, O.; Bartsch, V.; Postranecky, M.; Warren, M.; Wing, M.; Green, M.G.; Salvatore, F.; Bedjidian, M.; Kieffer, R.; Laktineh, I.; Fouz, M.C.; Bailey, D.S.; Barlow, R.J.; Kelly, M.; Thompson, R.J.; Danilov, M.; Tarkovsky, E.; Baranova, N.; Karmanov, D.; Korolev, M.; Merkin, M.; Voronin, A.; Frey, A.; Lu, S.; Seidel, K.; Simon, F.; Soldner, C.; Weuste, L.; Bonis, J.; Bouquet, B.; Callier, S.; Cornebise, P.; Doublet, Ph; Faucci Giannelli, M.; Fleury, J.; Li, H.; Martin-Chassard, G.; Richard, F.; de la Taille, Ch.; Poeschl, R.; Raux, L.; Seguin-Moreau, N.; Wicek, F.; Anduze, M.; Boudry, V.; Brient, J.C.; Gaycken, G.; Jeans, D.; Mora de Freitas, P.; Musat, G.; Reinhard, M.; Rouge, A.; Ruan, M.; Vanel, J.C.; Videau, H.; Park, K.H.; Zacek, J.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Belhorma, B.; Belmir, M.; Nam, S.W.; Park, I.H.; Yang, J.; Chai, J.S.; Kim, J.T.; Kim, G.B.; Kang, J.; Kwon, Y.J.

2010-01-01

A prototype silicon-tungsten electromagnetic calorimeter for an ILC detector was tested in 2007 at the CERN SPS test beam. Data were collected with electron and hadron beams in the energy range 8 to 80 GeV. The analysis described here focuses on the interactions of pions in the calorimeter. One of the main objectives of the CALICE program is to validate the Monte Carlo tools available for the design of a full-sized detector. The interactions of pions in the Si-W calorimeter are therefore confronted with the predictions of various physical models implemented in the GEANT4 simulation framework.

Neutron measurements from beam-target reactions at the ELISE neutral beam test facility

International Nuclear Information System (INIS)

Xufei, X.; Fan, T.; Nocente, M.; Gorini, G.; Bonomo, F.; Franzen, P.; Fröschle, M.; Grosso, G.; Tardocchi, M.; Grünauer, F.; Pasqualotto, R.

2014-01-01

Measurements of 2.5 MeV neutron emission from beam-target reactions performed at the ELISE neutral beam test facility are presented in this paper. The measurements are used to study the penetration of a deuterium beam in a copper dump, based on the observation of the time evolution of the neutron counting rate from beam-target reactions with a liquid scintillation detector. A calculation based on a local mixing model of deuterium deposition in the target up to a concentration of 20% at saturation is used to evaluate the expected neutron yield for comparison with data. The results are of relevance to understand neutron emission associated to beam penetration in a solid target, with applications to diagnostic systems for the SPIDER and MITICA Neutral Beam Injection prototypes

Collider detector beam line test table: a structural analysis

International Nuclear Information System (INIS)

Leininger, M.B.

1983-01-01

The apparatus which sweeps calorimeter and endwall modules through the beam during testing is called a beam line test table. Because of rather stringent requirements for the physical positioning of the modules an analysis is done here to determine the modifications to the current test table design which will minimize deflections of the table under load

The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

Energy Technology Data Exchange (ETDEWEB)

Roeder, B.T., E-mail: broeder@comp.tamu.ed [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Cherubini, S. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Davinson, T. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Goldberg, V.Z. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Gulino, M. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Pizzone, R.G. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Simmons, E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Sparta, R. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Spiridon, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Spitaleri, C. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Wallace, J.P. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Tribble, R.E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Woods, P.J. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom)

2011-04-01

We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d({sup 14}C,p){sup 15}C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

International Nuclear Information System (INIS)

Roeder, B.T.; McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A.; Cherubini, S.; Davinson, T.; Goldberg, V.Z.; Gulino, M.; Pizzone, R.G.; Simmons, E.; Sparta, R.; Spiridon, A.; Spitaleri, C.; Wallace, J.P.; Tribble, R.E.; Woods, P.J.

2011-01-01

We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d( 14 C,p) 15 C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

Silicon pore optics for the international x-ray observatory

Science.gov (United States)

Wille, E.; Wallace, K.; Bavdaz, M.; Collon, M. J.; Günther, R.; Ackermann, M.; Beijersbergen, M. W.; Riekerink, M. O.; Blom, M.; Lansdorp, B.; de Vreede, L.

2017-11-01

Lightweight X-ray Wolter optics with a high angular resolution will enable the next generation of X-ray telescopes in space. The International X-ray Observatory (IXO) requires a mirror assembly of 3 m2 effective area (at 1.5 keV) and an angular resolution of 5 arcsec. These specifications can only be achieved with a novel technology like Silicon Pore Optics, which is developed by ESA together with a consortium of European industry. Silicon Pore Optics are made of commercial Si wafers using process technology adapted from the semiconductor industry. We present the manufacturing process ranging from single mirror plates towards complete focusing mirror modules mounted in flight configuration. The performance of the mirror modules is tested using X-ray pencil beams or full X-ray illumination. In 2009, an angular resolution of 9 arcsec was achieved, demonstrating the improvement of the technology compared to 17 arcsec in 2007. Further development activities of Silicon Pore Optics concentrate on ruggedizing the mounting system and performing environmental tests, integrating baffles into the mirror modules and assessing the mass production.

The laser beam welding test of ODS fuel claddings

International Nuclear Information System (INIS)

Uwaba, Tomoyuki; Ukai, Shigeharu

2004-06-01

As a alternative method of pressurized resistance welding being currently developed, integrity evaluations for a laser beam welding joint between a ODS cladding tube and a FMS end plug were conducted for the purpose of studying the applicability of the laser beam welding technique to the welding with the lower end plug. The laser beam welding causes blowholes in the welding zone, whose effect on the high cycle fatigue strength of the joint is essential because of the flow-induced vibration during irradiation. The rotary bending tests using specimens with laser beam welding between ODS cladding tubes and FMS end plugs were carried out to evaluate the fatigue strength of the welding joint containing blowholes. The fatigue limit of stress amplitude about 200 MPa from 10 6 -10 7 cycles suggested that the laser beam welding joint had enough strength against the flow-induced vibration. Sizing of blowholes in the welding zone by using a micro X ray CT technique estimated the rate of defect areas due to blowholes at 1-2%. It is likely that the fatigue strength remained nearly unaffected by blowholes because of the no correlation between the breach of the rotary bending test specimen and the rate of defect area. Based on results of tensile test, internal burst test, Charpy impact test and fatigue test of welded zone, including study of allowable criteria of blowholes in the inspection, it is concluded that the laser beam welding can be probably applied to the welding between the ODS cladding tube and the FMS lower end plug. (author)

Photos from MPI: Module installation at CERN for 1999 Test Beam

CERN Multimedia

1999-01-01

Photo1 - Three HEC-1 modules after mating in the clean room. Photo2 - Close-up of three HEC-1 modules in the clean room when mounting the PSB boards. Photo3 - Three HEC-2 modules being inserted into the test-beam cryostat. Photo4 - Three HEC-2 modules in the test-beam cryostat. Photo5 - Three HEC-1 and three HEC-2 modules in the test-beam cryostat. Photo6 - Three HEC-1 and three HEC-2 modules in the test-beam cryostat.

Ultra-Broadband Silicon-Wire Polarization Beam Combiner/Splitter Based on a Wavelength Insensitive Coupler With a Point-Symmetrical Configuration

OpenAIRE

Uematsu, Takui; Kitayama, Tetsuya; Ishizaka, Yuhei; Saitoh, Kunimasa

2014-01-01

An ultrabroadband silicon wire polarization beam combiner/splitter (PBCS) based on a wavelength-insensitive coupler is proposed. The proposed PBCS consists of three identical directional couplers and two identical delay lines. We design the PBCS using the 3-D finite element method. Numerical simulations show that the proposed PBCS can achieve the transmittance of more than 90% over a wide wavelength range from 1450 to 1650 nm for both TE and TM polarized modes.

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Spatial resolution of wedge shaped silicon microstrip detectors

International Nuclear Information System (INIS)

Anticic, T.; Barnett, B.; Blumenfeld, B.; Chien, C.Y.; Fisher, P.; Gougas, A.; Krizmanic, J.; Madansky, L.; Newman, D.; Orndorff, J.; Pevsner, A.; Spangler, J.

1995-01-01

Several wedge-shaped silicon microstrip detectors with pitches from 30 to 100 μm have been designed by our group and beam tested at the CERN SPS. We find the spatial resolution σ becomes larger at the rate of 0.21 μm per 1 μm increase in pitch, but the number of strips per cluster remains about the same as the pitch varies from 30 to 100 μm. (orig.)

Latest developments on the highly granular Silicon-Tungsten Electromagnetic Calorimeter technological prototype for the International Large Detector

CERN Document Server

Irles, Adrián

2017-01-01

High precision physics at future colliders requires unprecedented highly granular calorimeters for the application of the Particle Flow (PF) algorithm. The physical proof of concept was given in the previous campaign of beam tests of physic prototypes within the CALICE collaboration. We present here the latest beam and laboratory test results and R&D developments for the Silicon-Tungsten Electromagnetic Calorimeter technological prototype with fully embedded very front-end (VFE) electronics for the International Large Detector at the International Linear Collider project.

Pixel-Tilecal-MDT Combined Test Beam

CERN Multimedia

B. Di Girolamo

A test with many expectations When an additional week of running (from September 11th to 18th) was allocated for the test-beam, it was decided to give priority to a combined run with the participation of the Pixel, Tilecal and MDT sub-detectors. The integration of these three sub-detectors was possible as they all use the baseline (DAQ-1/EF based) DAQ for test beams (as reported in a previous e-news). The tests and the addition of a common trigger and busy were organized in a short timescale by experts from the three sub-detectors and DAQ/EF. The expectations were many; both looking for problems and finding solutions. The setup The setup, shown in the figure, consisted of the Pixel telescope normally used during the sub-detector tests, two Tilecal barrel modules, two Tilecal extended barrel modules, and six MDT barrel chambers. This fully occupied a length of some 30 meters in the H8 line of the SPS North Area. Each sub-detector used their own specialized front-end electronics. The data collected by modu...

LASER ABLATION OF MONOCRYSTALLINE SILICON UNDER PULSED-FREQUENCY FIBER LASER

Directory of Open Access Journals (Sweden)

V. P. Veiko

2015-05-01

Full Text Available Subject of research. The paper deals with research of the surface ablation for single-crystal silicon wafers and properties of materials obtained in response to silicon ablation while scanning beam radiation of pulse fiber ytterbium laser with a wavelenght λ = 1062 nm in view of variation of radiation power and scanning modes. Method. Wafers of commercial p-type conductivity silicon doped with boron (111, n-type conductivity silicon doped with phosphorus (100 have been under research with a layer of intrinsical silicon oxide having the thickness equal to several 10 s of nanometers and SiO2 layer thickness from 120 to 300 nm grown by thermal oxidation method. The learning system comprises pulse fiber ytterbium laser with a wavelenght λ = 1062 nm. The laser rated-power output is equal to 20 W, pulse length is 100 ns. Pulses frequency is in the range from 20 kHz to 100 kHz. Rated energy in the pulse is equal to 1.0 mJ. Scanning has been carried out by means of two axial scanning device driven by VM2500+ and controlled by personal computer with «SinMarkТМ» software package. Scanning velocity is in the range from 10 mm/s to 4000 mm/s, the covering varies from 100 lines per mm to 3000 lines per mm. Control of samples has been carried out by means of Axio Imager A1m optical microscope Carl Zeiss production with a high definition digital video camera. All experiments have been carried out in the mode of focused laser beam with a radiation spot diameter at the substrate equal to 50 μm. The change of temperature and its distribution along the surface have been evaluated by FLIR IR imager of SC7000 series. Main results. It is shown that ablation occurs without silicon melting and with plasma torch origination. The particles of ejected silicon take part in formation of silicon ions plasma and atmosphere gases supporting the plasmo-chemical growth of SiO2. The range of beam scanning modes is determined where the growth of SiO2 layer is observed

Development of Microstrip Silicon Detectors for Star and ALICE

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Guthneck, L; Higueret, S; Hundt, F; Kühn, C E; Lutz, Jean Robert; Pozdniakov, S; Rami, F; Tarchini, A; Boucham, A; Bouvier, S; Erazmus, B; Germain, M; Giliberto, S; Martin, L; Le Moal, C; Roy, C; Colledani, C; Dulinski, W; Turchetta, R

1998-01-01

The physics program of STAR and ALICE at ultra-relativistic heavy ion colliders, RHIC and LHC respectively, requires very good tracking capabilities. Some specific quark gluon plasma signatures, based on strange matter measurements implies quite a good secondary vertex reconstruction.For this purpose, the inner trackers of both experiments are composed of high-granularity silicon detectors. The current status of the development of double-sided silicon microstrip detectors is presented in this work.The global performance for tracking purpose adn particle identification are first reviewed. Then tests of the detectors and of the associated readout electronics are described. In-beam measurements of noise, spatial resolution, efficiency and charge matching capability, as well as radiation hardness, are examined.

Large diameter lithium compensated silicon detectors for the NASA Advanced Composition Explorer (ACE) mission

International Nuclear Information System (INIS)

Allbritton, G.L.; Andersen, H.; Barnes, A.

1996-01-01

Fabrication of the 100 mm diameter, 3 mm thick lithium-compensated silicon, Si(Li), detectors for the Cosmic Ray Isotope Spectrometer (CRIS) instrument on board the ACE satellite required development of new float-zone silicon growing techniques, new Si(Li) fabrication procedures, and new particle beam testing sequences. These developments are discussed and results are presented that illustrate the advances made in realizing these CRIS Si(Li) detectors, which, when operational in the CRIS detector telescopes, will usher in a new generation of cosmic-ray isotope spectrometers

Rotating Beam Fatigue Testing and Hybrid Ceramic Bearings.

Science.gov (United States)

1994-07-01

Runout and Fast Fracture ......... 20 FIG.7 Stress-life Plots of Rotating Beam Fatigue Testing ............. 23 FIG.8 Fractograph of Rotating Beam...Chand-Kare Engineering Ceramics, Worcester, MA. Diamond wheels of 600 grits were used with longitudinal grinding applied for the final finishing of...stress in the range of 600-850 MPa. Three test completion modes were encountered, i.e. fast fracture at setup, fatigue fracture and runout (no failure

Readout electronics development for the ATLAS silicon tracker

International Nuclear Information System (INIS)

Borer, K.; Beringer, J.; Anghinolfi, F.; Aspell, P.; Chilingarov, A.; Jarron, P.; Heijne, E.H.M.; Santiard, J.C.; Verweij, H.; Goessling, C.; Lisowski, B.; Reichold, A.; Bonino, R.; Clark, A.G.; Kambara, H.; La Marra, D.; Leger, A.; Wu, X.; Richeux, J.P.; Taylor, G.N.; Fedotov, M.; Kuper, E.; Velikzhanin, Yu.; Campbell, D.; Murray, P.; Seller, P.

1995-01-01

We present the status of the development of the readout electronics for the large area silicon tracker of the ATLAS experiment at the LHC, carried out by the CERN RD2 project. Our basic readout concept is to integrate a fast amplifier, analog memory, sparse data scan circuit and analog-to-digital convertor (ADC) on a single VLSI chip. This architecture will provide full analog information of charged particle hits associated unambiguously to one LHC beam crossing, which is expected to be at a frequency of 40 MHz. The expected low occupancy of the ATLAS inner silicon detectors allows us to use a low speed (5 MHz) on-chip ADC with a multiplexing scheme. The functionality of the fast amplifier and analog memory have been demonstrated with various prototype chips. Most recently we have successfully tested improved versions of the amplifier and the analog memory. A piecewise linear ADC has been fabricated and performed satisfactorily up to 5 MHz. A new chip including amplifier, analog memory, memory controller, ADC, and data buffer has been designed and submitted for fabrication and will be tested on a prototype of the ATLAS silicon tracker module with realistic electrical and mechanical constraints. (orig.)

Silicon nanowires: structure and properties

International Nuclear Information System (INIS)

Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

2006-01-01

An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1987-01-01

The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

A test-bench for measurement of electrical static parameters of strip silicon detectors

International Nuclear Information System (INIS)

Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

CERN Document Server

Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Two-laser thermal-lens determination of phosphorus in silicon

International Nuclear Information System (INIS)

Grishko, V.I.; Gol'dshtein, M.M.; Grishko, V.P.; Yudelevich, I.G.

1986-01-01

Laser thermal-lens spectrophotometry is a high-sensitivity method of measuring absorptivity, where the signal is the relative intensity change at the beam center after passage through the medium, which absorbs at the laser wavelength. The two-lens method is discussed here which employs a high-power laser to induce the lens, while the absorptivity is measured from the intensity change in the beam from a continous wave low-power test laser at a wavelength different from that for the inducing one. This paper uses two-laser thermal-lens techniques to determine phosphorus in silicon. Phosphorus is determined as the ionic association of molybdophosphoric acid with auramine

Static and dynamic testing of a damaged post tensioned concrete beam

Directory of Open Access Journals (Sweden)

Limongelli M.P.

2015-01-01

Full Text Available In this paper are reported the results of an experimental campaign carried out on a post tensioned concrete beam with the aim of investigating the possibility to detect early warning signs of deterioration basing on static and/or dynamic tests. The beam was tested in several configurations aimed to reproduce several different phases of the ‘life’ of the beam: the original undamaged state, increasing loss of tension in the post tensioning cables, a strengthening intervention carried out by means of a second tension cable, formation of further cracks on the strengthened beam. Responses of the beam were measured by an extensive set of instruments consisting of accelerometers, inclinometers, displacement transducers, strain gauges and optical fibres. The paper discusses the tests program and the dynamic characterization of the beam in the different damage scenarios. The modal properties of the beam in the different phases were recovered basing on the responses recorded on the beam during sine-sweep and impact hammer tests. The variation of the first modal frequency was studied to investigate the sensitivity of this parameter to both the cracking of the concrete section and the tension in the cables and also to compare results given by different types of experimental tests.

Probe station for testing of ALICE silicon drift detectors

CERN Document Server

Humanic, T J; Piemonte, C; Rashevsky, A; Sugarbaker, E R; Vacchi, A

2003-01-01

Large area, 7.25 cm multiplied by 8.76 cm silicon drift detectors have been developed and are in production for the ALICE experiment at LHC. An active area of the detector of more than 50 cm**2 imposes high demands on the quality of processing and raw material. Automated testing procedures have been developed to test detectors before mounting them on the ladders. Probe stations for ALICE SDD testing were designed and built at INFN, Trieste and Ohio State University (OSU). Testing procedures, detector selection criteria and some details of the OSU probe station design are discussed.

The new silicon strip detectors for the CMS tracker upgrade

International Nuclear Information System (INIS)

Dragicevic, M.

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the tracker caused by the increase in luminosity which is proposed as an upgrade to the LHC accelerator (sLHC). This chapter motivates the work I have conducted and clarifies why the solutions proposed by myself are important contributions to the upgrade of the CMS tracker. The following chapters present the concepts that are necessary to operate the silicon strip sensors at sLHC luminosities and additional improvements to the construction and quality assurance of the sensors and the detector modules. The most important concepts and works presented in chapters 7 to 9 are: Development of a software framework to enable the flexible and quick design of test structures and sensors. Selecting a suitable sensor material which is sufficiently radiation hard. Design, implementation and production of a standard set of test structures to enable the quality assurance of such sensors and any future developments. Electrical characterisation of the test structures and analysis

Characterization of ion beam induced nanostructures

International Nuclear Information System (INIS)

Ghatak, J.; Satpati, B.; Umananda, M.; Kabiraj, D.; Som, T.; Dev, B.N.; Akimoto, K.; Ito, K.; Emoto, T.; Satyam, P.V.

2006-01-01

Tailoring of nanostructures with energetic ion beams has become an active area of research leading to the fundamental understanding of ion-solid interactions at nanoscale regime and with possible applications in the near future. Rutherford backscattering spectrometry (RBS), high resolution transmission electron microscopy (HRTEM) and asymmetric X-ray Bragg-rocking curve experimental methods have been used to characterize ion-induced effects in nanostructures. The possibility of surface and sub-surface/interface alloying at nano-scale regime, ion-beam induced embedding, crater formation, sputtering yield variations for systems with isolated nanoislands, semi-continuous and continuous films of noble metals (Au, Ag) deposited on single crystalline silicon will be reviewed. MeV-ion induced changes in specified Au-nanoislands on silicon substrate are tracked as a function of ion fluence using ex situ TEM. Strain induced in the bulk silicon substrate surface due to 1.5 MeV Au 2+ and C 2+ ion beam irradiation is determined by using HRTEM and asymmetric Bragg X-ray rocking curve methods. Preliminary results on 1.5 MeV Au 2+ ion-induced effects in nanoislands of Co deposited on silicon substrate will be discussed

Depth profiling using C60+ SIMS-Deposition and topography development during bombardment of silicon

International Nuclear Information System (INIS)

Gillen, Greg; Batteas, James; Michaels, Chris A.; Chi, Peter; Small, John; Windsor, Eric; Fahey, Albert; Verkouteren, Jennifer; Kim, K.J.

2006-01-01

A C 60 + primary ion source has been coupled to an ion microscope secondary ion mass spectrometry (SIMS) instrument to examine sputtering of silicon with an emphasis on possible application of C 60 + depth profiling for high depth resolution SIMS analysis of silicon semiconductor materials. Unexpectedly, C 60 + SIMS depth profiling of silicon was found to be complicated by the deposition of an amorphous carbon layer which buries the silicon substrate. Sputtering of the silicon was observed only at the highest accessible beam energies (14.5 keV impact) or by using oxygen backfilling. C 60 + SIMS depth profiling of As delta-doped test samples at 14.5 keV demonstrated a substantial (factor of 5) degradation in depth resolution compared to Cs + SIMS depth profiling. This degradation is thought to result from the formation of an unusual platelet-like grain structure on the SIMS crater bottoms. Other unusual topographical features were also observed on silicon substrates after high primary ion dose C 60 + bombardment

Beam-induced quench test of LHC main quadrupole

CERN Document Server

Priebe, A; Dehning, B; Effinger, E; Emery, J; Holzer, E B; Kurfuerst, C; Nebot Del Busto, E; Nordt, A; Sapinski, M; Steckert, J; Verweij, A; Zamantzas, C

2011-01-01

Unexpected beam loss might lead to a transition of the accelerator superconducting magnet to a normal conducting state. The LHC beam loss monitoring (BLM) system is designed to abort the beam before the energy deposited in the magnet coils reach a quench-provoking level. In order to verify the threshold settings generated by simulation, a series of beam-induced quench tests at various beam energies has been performed. The beam losses are generated by means of an orbital bump peaked in one of main quadrupole magnets (MQ). The analysis includes not only BLM data but also the quench protection system (QPS) and cryogenics data. The measurements are compared to Geant4 simulations of energy deposition inside the coils and corresponding BLM signal outside the cryostat.

A monolithic silicon detector telescope

International Nuclear Information System (INIS)

Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

1996-01-01

An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

Diffusion length of minority carriers in scanning electron beam annealed silicon

International Nuclear Information System (INIS)

Smith, H.J.; Cilliers, R.; Bontemps, A.

1982-01-01

Ion implantation has advantages for solar cell production, but necessitates an annealing step. Various new transitory annealing methods have appeared recently. A particularly attractive method is multi-scan electron beam annealing of thermally isolated wafers. Energy is applied homogeneously over the whole target surface and the temperature rises throughout the thickness. Backscattering analysis shows good recrystallization in seconds. However the effect of this total heating on the diffusion length (Lsub(D)) must be investigated particularly in view of the degradation of Lsub(D) due to high temperature oven annealing. The semiconductor-electrolyte diode method was set up to measure the current generated in the cell due to the creation and diffusion of carriers in the silicon under photon irradiation. Comparison with a theoretical model yields Lsub(D). It appears that 3mA.cm - 2 of 15keV electrons recrystallizes damage in 2.5 seconds and does not decrease Lsub(D) in the bulk. In 4 seconds the Lsub(D) decreases and dopant diffusion occurs. On technical grounds this method can thus be applied for solar cell production. (Auth.)

Initial Beam Test of the Prototype Strip Line BPM

International Nuclear Information System (INIS)

Kwon, Hyeok Jung; Kim, Han Sung; Seol, Kyung Tae; Ryu, Jin Yeong; Jang, Ji Ho; Cho, Yong Sub

2011-01-01

A beam position monitor (BPM) was developed which would be used for the Proton Engineering Frontier Project (PEFP) beam line. It is a strip line BPM which is commonly used one for the proton beam. The BPM cross section was designed with the SUPERFISH code and the matching section to the feed through was designed by the MWS code. The design parameters of the BPM are shown in Table 1. The designed BPM was fabricated to verify the manufacturing process and check its electrical performance. After the low power test at the test stand, the BPM was installed at the 20-MeV proton accelerator beam line as shown in Fig. 1

The 2002 Test Beam DAQ

CERN Multimedia

Mapelli, L.

The ATLAS Tilecal group has been the first user of the Test Beam version of the DAQ/EF-1 prototype in 2000. The prototype was successfully tested in lab in summer 1999 and it has been officially adopted as baseline solution for the Test Beam DAQ at the end of 1999. It provides the right solution for users who need to have a modern data acquisition chain for final or almost final front-end and off-detector electronics (RODs and ROD emulators). The typical architecture for the readout and the DAQ is sketched in the figure below. A number of detector crates can send data over the Read Out Link to the Read Out System. The Read Out System sends data over an Ethernet link to a SubFarm PC that provides to send the data to Central Data Recording. In 2001 also the Muon MDT group has adopted this modern DAQ where for the first time a PC-based ReadOut System has been used, instead of the VME based implementation used in 2000, and for the Tilecal DAQ in 2001. In 2002 also Tilecal has adopted the PC-based implement...

The DOe Silicon Track Trigger

International Nuclear Information System (INIS)

Steinbrueck, Georg

2003-01-01

We describe a trigger preprocessor to be used by the DOe experiment for selecting events with tracks from the decay of long-lived particles. This Level 2 impact parameter trigger utilizes information from the Silicon Microstrip Tracker to reconstruct tracks with improved spatial and momentum resolutions compared to those obtained by the Level 1 tracking trigger. It is constructed of VME boards with much of the logic existing in programmable processors. A common motherboard provides the I/O infrastructure and three different daughter boards perform the tasks of identifying the roads from the tracking trigger data, finding the clusters in the roads in the silicon detector, and fitting tracks to the clusters. This approach provides flexibility for the design, testing and maintenance phases of the project. The track parameters are provided to the trigger framework in 25 μs. The effective impact parameter resolution for high-momentum tracks is 35 μm, dominated by the size of the Tevatron beam

Modify beam transversal test to evaluate hemiparkinsonian rats

International Nuclear Information System (INIS)

Blanco Lezcano, Lissette; Lorigados Pedre, Lourdes del C; Fernandez Verdecia, Caridad I; Serrano Sanchez, Teresa; Pavon Fuentes, Nancy; Turner, Liliana Francis

2010-01-01

The nigrostriatal degeneration underlying Parkinson's disease (PD) is commonly studied in experimental animals by injection of the neurotoxin 6-hydroxydopamine. the present study describes a modified version of a beam traversal test which allows the quantification of the motor deficit through the time spent to arrive to the platform once all four paws of the animals are in contact with the beam (escape latency, el), the time spent before falling (tumbled down latency, TDL) and the number of errors (NE) committed for the animals in each beam. The shape and the diameter of the cross section of the beams were modified from rectangular and circular cross section with 2.5 cm of diameter to the same shape with 1 cm of diameter, which induced a high difficulty to the execution of the test. Three groups of Wistar rats were examined: untreated (n=15), lesioned with 6-hydroxydopamine (n=14), and sham-operated (n=14). All variables studied showed significant differences between control and hemiparkinsonian rats. The EL and the NE were increased and the TDL was decreased in hemiparkinsonian rats for all beams in comparison with control rats. In TDL the significant differences between groups were more evident (p<0.001) for the beams with high cross section irrespective of the shape of the cross section. BTT is a convenient sensorimotor test that does not need to be trained extensively, and require adverse motivation or food deprivation and appears to be very useful in evaluating the motor deficits in established unilateral model of PD and also other experimental models.

Performance and perspectives of the diamond based Beam Condition Monitor for beam loss monitoring at CMS

CERN Document Server

AUTHOR|(CDS)2080862

2015-01-01

At CMS, a beam loss monitoring system is operated to protect the silicon detectors from high particle rates, arising from intense beam loss events. As detectors, poly-crystalline CVD diamond sensors are placed around the beam pipe at several locations inside CMS. In case of extremely high detector currents, the LHC beams are automatically extracted from the LHC rings.Diamond is the detector material of choice due to its radiation hardness. Predictions of the detector lifetime were made based on FLUKA monte-carlo simulations and irradiation test results from the RD42 collaboration, which attested no significant radiation damage over several years.During the LHC operational Run1 (2010 â?? 2013), the detector efficiencies were monitored. A signal decrease of about 50 times stronger than expectations was observed in the in-situ radiation environment. Electric field deformations due to charge carriers, trapped in radiation induced lattice defects, are responsible for this signal decrease. This so-called polarizat...

Silicon-to-silicon wafer bonding using evaporated glass

DEFF Research Database (Denmark)

Weichel, Steen; Reus, Roger De; Lindahl, M.

1998-01-01

Anodic bending of silicon to silicon 4-in. wafers using an electron-beam evaporated glass (Schott 8329) was performed successfully in air at temperatures ranging from 200 degrees C to 450 degrees C. The composition of the deposited glass is enriched in sodium as compared to the target material....... The roughness of the as-deposited films was below 5 nm and was found to be unchanged by annealing at 500 degrees C for 1 h in air. No change in the macroscopic edge profiles of the glass film was found as a function of annealing; however, small extrusions appear when annealing above 450 degrees C. Annealing...... of silicon/glass structures in air around 340 degrees C for 15 min leads to stress-free structures. Bonded wafer pairs, however, show no reduction in stress and always exhibit compressive stress. The bond yield is larger than 95% for bonding temperatures around 350 degrees C and is above 80% for bonding...

Tests of beam-based alignement at FACET

CERN Document Server

Latina, A; Schulte, D; Adli, E

2014-01-01

The performance of future linear colliders will depend critically on beam-based alignment (BBA) and feedback systems, which will play a crucial role in guaranteeing the low emittance transport throughout such machines. BBA algorithms designed to improve the beam transmission in a linac by simultaneously optimising the trajectory and minimising the residual dispersion, have thoughtfully been studied in theory over the last years, and successfully verified experimentally. One such technique is called Dispersion-Free Steering (DFS). A careful study of the DFS performance at the SLAC test facility FACET lead us to design a beam-based technique specifically targeted to reduce the impact of transverse short-range wakefields, rather than of the dispersion, being the wakefields the limiting factor to the FACET performance. This technique is called Wakefield-Free Steering (WFS). The results of the first tests of WFS at FACET are presented in this paper.

Tests of SEC stability in high flux proton beams

International Nuclear Information System (INIS)

Agoritsas, V.; Witkover, R.L.

1979-01-01

The Secondary Emission Chamber (SEC) is used to measure the beam intensity in slow extracted beam channels of proton synchrotrons around the world. With the improvements in machine intensity, these monitors have been exposed to higher flux conditions than in the past. A change in sensitivity of up to 25% has been observed in the region around the beam spot. Using SEC's of special construction, a series of tests was performed at FNAL, BNL-AGS and CERN-PS. The results of these tests and conclusions about the construction of more stable SEC's are presented

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Theoretical and experimental comparison of proton and helium-beam radiography using silicon pixel detectors

Science.gov (United States)

Gehrke, T.; Amato, C.; Berke, S.; Martišíková, M.

2018-02-01

Ion-beam radiography (iRAD) could potentially improve the quality control of ion-beam therapy. The main advantage of iRAD is the possibility to directly measure the integrated stopping power. Until now there is no clinical implementation of iRAD. Topics of ongoing research include developing dedicated detection systems to achieve the desired spatial resolution (SR) and investigating different ion types as imaging radiation. This work focuses on the theoretical and experimental comparison of proton (pRAD) and helium-beam radiography (αRAD). The experimental comparison was performed with an in-house developed detection system consisting of silicon pixel detectors. This system enables the measurement of energy deposition of single ions, their tracking, and the identification of the ion type, which is important for αRAD due to secondary fragments. A 161 mm-thick PMMA phantom with an air gap of 1 mm placed at different depths was imaged with a 168 MeV u-1 proton/helium-ion beam at the Heidelberg ion-beam therapy center. The image quality in terms of SR and contrast-to-noise ratio (CNR) was evaluated. After validating MC simulations against experiments, pRAD and αRAD were compared to carbon-beam radiography (cRAD) in simulations. The theoretical prediction that the CNR of pRAD and αRAD is equal at similar imaging doses was experimentally confirmed. The measured SR of αRAD was 55% better compared to pRAD. The simulated cRads showed the expected improvement in SR and the decreased CNR at the same dose compared to the αRads, however only at dose levels exceeding typical doses of diagnostic x-ray projections. For clinically applicable dose levels, the cRads suffered from an insufficient number of carbon ions per pixel (220 μm  ×  220 μm). In conclusion, it was theoretically and experimentally shown that αRAD provides a better SR than pRAD without any disadvantages concerning the CNR. Using carbon ions instead of helium ions leads to a better SR at the

Development of a Silicon Based Electron Beam Transmission Window for Use in a KrF Excimer Laser System

CERN Document Server

Gentile, C A; Hartfield, J W; Hawryluk, R J; Hegeler, F; Heitzenroeder, P J; Jun, C H; Ku, L P; Lamarche, P H; Myers, M C; Parker, J J; Parsells, R F; Payen, M; Raftopoulos, S; Sethian, J D

2002-01-01

The Princeton Plasma Physics Laboratory (PPPL), in collaboration with the Naval Research Laboratory (NRL), is currently investigating various novel materials (single crystal silicon, , and ) for use as electron-beam transmission windows in a KrF excimer laser system. The primary function of the window is to isolate the active medium (excimer gas) from the excitation mechanism (field-emission diodes). Chosen window geometry must accommodate electron energy transfer greater than 80% (750 keV), while maintaining structural integrity during mechanical load (1.3 to 2.0 atm base pressure differential, approximate 0.5 atm cyclic pressure amplitude, 5 Hz repetition rate) and thermal load across the entire hibachi area (approximate 0.9 W centre dot cm superscript ''-2''). In addition, the window must be chemically resistant to attack by fluorine free-radicals (hydrofluoric acid, secondary). In accordance with these structural, functional, and operational parameters, a 22.4 mm square silicon prototype window, coated w...

Spectrometer based on the silicon semiconductor detectors for a study of the two charged particles correlation

International Nuclear Information System (INIS)

Krumsztein, Z.W.; Siemiarczuk, T.; Szawlowski, M.

1974-01-01

The spectrometer based on the silicon semiconductor detectors for a study of the correlation between two charged particles is described. The results of the time resolution and particles identification measurements are presented. The tests were performed in the proton beam of the JINR synchrocyclotron. (author)

ESP – Data from Restarted Life Tests of Various Silicon Materials

Energy Technology Data Exchange (ETDEWEB)

Schneider, Jim

2010-10-06

Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Science.gov (United States)

Poley, L.; Blue, A.; Bates, R.; Bloch, I.; Díez, S.; Fernandez-Tejero, J.; Fleta, C.; Gallop, B.; Greenall, A.; Gregor, I.-M.; Hara, K.; Ikegami, Y.; Lacasta, C.; Lohwasser, K.; Maneuski, D.; Nagorski, S.; Pape, I.; Phillips, P. W.; Sperlich, D.; Sawhney, K.; Soldevila, U.; Ullan, M.; Unno, Y.; Warren, M.

2016-07-01

The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6·1034 cm-2s-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1·1016 1 MeV neq/cm2. In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor - utilizing bi-metal readout layers - wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.

Experimental verification of the CLIC Decelerator with the test Beam Line in the CLIC test facility 3

CERN Document Server

Lillestøl, R L; Olvegård, M; Rabiller, A N; Sterbini, G; Adli, E

2012-01-01

The Test Beam Line in the CLIC Test Facility 3 is the first prototype of the CLIC drive beam decelerator. The main purpose of the experiment is to demonstrate efficient 12 GHz rf power production and stable transport of an electron drive beam during deceleration. The Test Beam Line consists of a FODO structure with high precision BPMs and quadrupoles mounted on mechanical movers for precisebeam alignment. Nine out of the planned 16 Power Extraction and Transfer Structures have currently been installed and commissioned. We correlate rf power production measurements with the drive beam deceleration measurements, and compare the two measurements to the theoretical predictions. We also discuss the impact of the drive beam bunch length and bunch combination on the measurements.

Analysis of pixel systematics and space point reconstruction with DEPFET PXD5 matrices using high energy beam test data

Energy Technology Data Exchange (ETDEWEB)

Reuen, Lars

2011-02-15

To answer the current questions in particle physics vertex-detectors, the innermost sub-detector system of a multipurpose particle detector, with brilliant spatial resolution and at the same time with as little sensor material as possible are mandatory. These requirements are the driving force behind the newest generation of silicon pixel sensors like the DEPFET pixel, which incorporates the first amplification stage in form of a transistor in the fully depleted sensor bulk, allowing for a high spatial resolution even with thinned down sensors. A DEPFET pixel prototype system, build for the future TeV-scale liner collider ILC, was characterized in a high energy beam test at CERN with a spatial resolution and statistics that allowed for the first time in-pixel homogeneity measurements of DEPFET pixels. Yet, in the quest for higher precision the sensor development must be accompanied by progress in position reconstruction algorithms. A study with three novel approaches in position reconstruction was undertaken. The results of the in-pixel beam test and the performance of the new methods with an emphasis on {delta}-electrons will be presented here. (orig.)

Analysis of pixel systematics and space point reconstruction with DEPFET PXD5 matrices using high energy beam test data

International Nuclear Information System (INIS)

Reuen, Lars

2011-02-01

To answer the current questions in particle physics vertex-detectors, the innermost sub-detector system of a multipurpose particle detector, with brilliant spatial resolution and at the same time with as little sensor material as possible are mandatory. These requirements are the driving force behind the newest generation of silicon pixel sensors like the DEPFET pixel, which incorporates the first amplification stage in form of a transistor in the fully depleted sensor bulk, allowing for a high spatial resolution even with thinned down sensors. A DEPFET pixel prototype system, build for the future TeV-scale liner collider ILC, was characterized in a high energy beam test at CERN with a spatial resolution and statistics that allowed for the first time in-pixel homogeneity measurements of DEPFET pixels. Yet, in the quest for higher precision the sensor development must be accompanied by progress in position reconstruction algorithms. A study with three novel approaches in position reconstruction was undertaken. The results of the in-pixel beam test and the performance of the new methods with an emphasis on δ-electrons will be presented here. (orig.)

Critical Dispersion-Theory Tests of Silicon's IR Refractive Index

Science.gov (United States)

Karstens, William; Smith, D. Y.

Silicon strongly absorbs both visible and UV light, but is highly transparent in the IR. Hence, it is a common choice for infrared windows and lenses. However, optical design is hindered by literature index values that disagree by up to 1%. In contrast optical-glass indices are known to 0.01% or better. The most widely available silicon IR indices are based on bulk measurements using either Snell's-Law refraction by a prism or channel-spectra interference of front- and backsurface reflections from a planar sample. To test the physical acceptability of these data, we have developed criteria based on a Taylor expansion of the Kramers-Kronig relation for the index at energies below strong inter-band transitions. These tests require that the coefficients of the series in powers of energy squared must be positive within the region of transparency. This is satisfied by essentially all prism measurements; their small scatter arises primarily from impurities and doping. In contrast, channel-spectra data fail in the second and third coefficients. A review of the experimental analysis indicates three problems besides purity: incorrect channel number arising from a channel-spectra model that neglects spectrum distortion by the weak lattice absorption; use of a series expansion of mixed parity in photon energy to describe the even-parity index; and use of an incorrect absorption energy in the Li-Sellmeier dispersion formula. Recommendations for IR index values for pure silicon will be discussed. Supported in part by the US Department of Energy, Office of Science, Office of Nuclear Physics under contract DE-AC02-06CH11357.

Beam position determination for the Test Storage Ring

International Nuclear Information System (INIS)

Baumann, P.

1987-01-01

The Test Storage Ring (TSR) for heavy ions, currently under design and construction at the Max Planck Institute for Nuclear Physics in Heidelberg, requires an extensive beam diagnostics system in order to enable it to operate without friction. This thesis concerns the beam position determination sub-system of this diagnostics system which is intended to determine the beam center of gravity of a bunched beam inside the cross section of the beam tube in a non-destructive manner. An electrostatic pickup is used to sense the location of the beam; the mode of operation of this device will be explained in detail. The signals go to a preamplifier from where they are then sent via a multiplex system to the measuring unit. This point also represents the interface to the computer system that controls the TSR. The prototype developed here was tested with the aid of a particle beam, as well as with other measurement methods. Resolutions of better than 1 mm about the center have been measured. In order to achieve or even improve such resolutions later in actual operation, it is possible to determine the properties of the preamplifiers with the aid of calibration signals and to take these into account in the course of the signal evaluation in the computer. The differences between the individual electrodes of a given pickup must also be compensated. These procedures and their associated electronic circuits are also described in this paper

Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

International Nuclear Information System (INIS)

La Rocca, P.; Billotta, S.; Blancato, A.A.; Bonanno, D.; Bonanno, G.; Fallica, G.; Garozzo, S.; Lo Presti, D.; Marano, D.; Pugliatti, C.; Riggi, F.; Romeo, G.; Santagati, G.; Valvo, G.

2015-01-01

The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers

Fabrication, characterization and testing of silicon photomultipliers for the Muon Portal Project

Energy Technology Data Exchange (ETDEWEB)

La Rocca, P., E-mail: paola.larocca@ct.infn.it [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Billotta, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Blancato, A.A.; Bonanno, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); Bonanno, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Fallica, G. [STMicroelectronics - Catania (Italy); Garozzo, S. [INAF - Osservatorio Astrofisico di Catania (Italy); Lo Presti, D. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Marano, D. [INAF - Osservatorio Astrofisico di Catania (Italy); Pugliatti, C.; Riggi, F. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Romeo, G. [INAF - Osservatorio Astrofisico di Catania (Italy); Santagati, G. [Dipartimento di Fisica e Astronomia - Catania (Italy); INFN - Sezione di Catania (Italy); Valvo, G. [STMicroelectronics - Catania (Italy)

2015-07-01

The Muon Portal is a recently started Project aiming at the construction of a large area tracking detector that exploits the muon tomography technique to inspect the contents of traveling cargo containers. The detection planes will be made of plastic scintillator strips with embedded wavelength-shifting fibres. Special designed silicon photomultipliers will read the scintillation light transported by the fibres along the strips and a dedicated electronics will combine signals from different strips to reduce the overall number of channels, without loss of information. Different silicon photomultiplier prototypes, both with the p-on-n and n-on-p technologies, have been produced by STMicroelectronics during the last years. In this paper we present the main characteristics of the silicon photomultipliers designed for the Muon Portal Project and describe the setup and the procedure implemented for the characterization of these devices, giving some statistical results obtained from the test of a first batch of silicon photomultipliers.

Commissioning status of the decelerator test beam line in CTF3

CERN Document Server

Adli, E; Lillestol, R; Olvegaard, M; Syratchev, I; Carrillo, D; Toral, F; Faus-Golfe, A; Garcia-Garrigos, J J; Kubyshin, Y; Montoro, G

2010-01-01

The CLIC Test Facility (CTF3) at CERN was constructed by the CTF3 collaboration to study the feasibility of the concepts for a compact linear collider. The test beam line (TBL) recently added to the CTF3 machine was designed to study the CLIC decelerator beam dynamics and 12 GHz power production. The beam line consists of a FODO lattice with high precision BPM’s and quadrupoles on movers for precise beam alignment. A total of 16 Power Extraction and Transfer Structures (PETS) will be installed in between the quadrupoles to extract 12 GHz power from the drive beam provided by the CTF3 machine. The CTF3 drive beam with a bunch-train length of 140 ns, 12 GHz bunch repetition frequency and an average current over the train of up to 28 A will be injected into the test beam line. Each PETS structure will produce 135 MW of 12 GHz power at nominal current. The beam will have lost more than 50 % of its initial energy of 150 MeV at the end of the beam line and will contain particles with energies between 65 MeV and 1...

A silicon micromachined resonant pressure sensor

International Nuclear Information System (INIS)

Tang Zhangyang; Fan Shangchun; Cai Chenguang

2009-01-01

This paper describes the design, fabrication and test of a silicon micromachined resonant pressure sensor. A square membrane and a doubly clamped resonant beam constitute a compound structure. The former senses the pressure directly, while the latter changes its resonant frequency according to deformation of the membrane. The final output relation between the resonant frequency and the applied pressure is deducted according to the structure mechanical properties. Sensors are fabricated by micromachining technology, and then sealed in vaccum. These sensors are tested by open-loop and close-loop system designed on purpose. The experiment results demonstrate that the sensor has a sensitivity of 49.8Hz/kPa and repeatability of 0.08%.

PEP radiation shielding tests in SLAC A Beam

International Nuclear Information System (INIS)

Ash, W.; DeStaebler, H.; Harris, J.; Jenkins, T.; Murray, J.

1977-09-01

Radiation shielding tests designed to simulate possible conditions in and around the PEP experimental halls were conducted. The SLAC A Beam was targeted in the block tunnel at a point about midway between End Station A and Beam Dump East. At that site it was relatively easy to rearrange the concrete block structure to simulate the various shielding configurations under consideration for PEP. Extensive surveys of neutron and ionizing radiation were made. Complete results of the shielding tests are given

Development of nanometer resolution C-Band radio frequency beam position monitors in the Final Focus Test Beam

Energy Technology Data Exchange (ETDEWEB)

Slaton, T.; Mazaheri, G. [Stanford Univ., CA (US). Stanford Linear Accelerator Center; Shintake, T. [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

1998-08-01

Using a 47 GeV electron beam, the Final Focus Test Beam (FFTB) produces vertical spot sizes around 70 nm. These small beam sizes introduce an excellent opportunity to develop and test high resolution Radio Frequency Beam Position Monitors (RF-BPMs). These BPMs are designed to measure pulse to pulse beam motion (jitter) at a theoretical resolution of approximately 1 nm. The beam induces a TM{sub 110} mode with an amplitude linearly proportional to its charge and displacement from the BPM's (cylindrical cavity) axis. The C-band (5,712 MHz) TM{sub 110} signal is processed and converted into beam position for use by the Stanford Linear Collider (SLC) control system. Presented are the experimental procedures, acquisition, and analysis of data demonstrating resolution of jitter near 25 nm. With the design of future e{sup +}e{sup -} linear colliders requiring spot sizes close to 3 nm, understanding and developing RF-BPMs will be essential in resolving and controlling jitter.

Development of nanometer resolution C-Band radio frequency beam position monitors in the Final Focus Test Beam

International Nuclear Information System (INIS)

Slaton, T.; Mazaheri, G.

1998-08-01

Using a 47 GeV electron beam, the Final Focus Test Beam (FFTB) produces vertical spot sizes around 70 nm. These small beam sizes introduce an excellent opportunity to develop and test high resolution Radio Frequency Beam Position Monitors (RF-BPMs). These BPMs are designed to measure pulse to pulse beam motion (jitter) at a theoretical resolution of approximately 1 nm. The beam induces a TM 110 mode with an amplitude linearly proportional to its charge and displacement from the BPM's (cylindrical cavity) axis. The C-band (5,712 MHz) TM 110 signal is processed and converted into beam position for use by the Stanford Linear Collider (SLC) control system. Presented are the experimental procedures, acquisition, and analysis of data demonstrating resolution of jitter near 25 nm. With the design of future e + e - linear colliders requiring spot sizes close to 3 nm, understanding and developing RF-BPMs will be essential in resolving and controlling jitter

Fabricating solar cells with silicon nanoparticles

Science.gov (United States)

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

Science.gov (United States)

Paolozzi, L.; Bandi, Y.; Benoit, M.; Cardarelli, R.; Débieux, S.; Forshaw, D.; Hayakawa, D.; Iacobucci, G.; Kaynak, M.; Miucci, A.; Nessi, M.; Ratib, O.; Ripiccini, E.; Rücker, H.; Valerio, P.; Weber, M.

2018-04-01

The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e‑ RMS and a pulse rise time of less than 2 ns , in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps .

Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

Energy Technology Data Exchange (ETDEWEB)

Viel, Simon, E-mail: sviel@lbl.gov [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Banerjee, Swagato [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States); Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States); Pranko, Aliaksandr [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Rieger, Julia [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); II Physikalisches Institut, Georg-August-Universität, Göttingen (Germany); Wolf, Julian [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Wu, Sau Lan; Yang, Hongtao [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States)

2016-09-21

In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN. - Highlights: • Extended inner pixel barrel layers are proposed for the ATLAS ITk upgrade. • Test beam results at small track incidence angles validate this ATLAS ITk design. • Long pixel clusters are reconstructed with high efficiency at low threshold values. • Excellent angular resolution is achieved using pixel cluster length information.

Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

International Nuclear Information System (INIS)

Viel, Simon; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian; Wu, Sau Lan; Yang, Hongtao

2016-01-01

In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN. - Highlights: • Extended inner pixel barrel layers are proposed for the ATLAS ITk upgrade. • Test beam results at small track incidence angles validate this ATLAS ITk design. • Long pixel clusters are reconstructed with high efficiency at low threshold values. • Excellent angular resolution is achieved using pixel cluster length information.

The Silicon Ministrip Detector of the DELPHI Very Forward Tracker

CERN Document Server

AUTHOR|(CDS)2067985

1996-01-01

The subject of this work is the design, test and construction of a new silicon tracking detector for the extreme forward region of the DELPHI experiment at LEP. I joined the Very Forward Tracker (VFT) Ministrip group in 1993, at a time when the upgrade of the DELPHI tracking system was proposed. My first task was to participate in the design of the ministrip detector for the VFT. This included the optimisation of the detector layout in simulations and the study of prototype detectors in the testbeam. In 1994 I became responsible for the tests and assembly' of the VFT ministrip detector at CERN. The main focus of my work was the study of the performance of a large variety of detectors in beam tests. This included the preparation of the test setup, the tests of different detectors and the analysis of the measurements. With these measurements it is possible to compare the advantages and disadvantages of various new layouts for large pitch silicon strip detectors. In particular the signal response and spatial res...

CERN PSB Beam Tests of CNAO Synchrotron's Digital LLRF

CERN Document Server

Angoletta, M E; De Martinis, C; Falbo, L; Findlay, A; Foglio, R; Hunt, S; Tourres, D; Vescovi, C

2008-01-01

The Italian National Centre for Oncological hAdrontherapy (CNAO), in its final construction phase, uses proton and carbon ion beams to treat patients affected by solid tumours. At the heart of CNAO is a 78- meter circumference synchrotron that accelerates particles to up to 400 MeV/u. The synchrotron relies on a digital LLRF system based upon Digital Signal Processors (DSPs) and Field Programmable Gate Array (FPGA). This system implements cavity servoing and beam control capabilities, such as phase and radial loops. Beam tests of the CNAO synchrotron LLRF system were carried out at CERN's Proton Synchrotron Booster (PSB) in autumn 2007, to verify the combined DSP/FPGA architecture and the beam control capabilities. For this, a prototype version of CNAO's LLRF system was adapted to the PSB requirements. This paper outlines the prototype system layout and describes the tests carried out and their results. In particular, system architecture and beam control capabilities were successfully proven by comparison wit...

Test of tissue-equivalent scintillation detector for dose measurement of megavoltage beams

International Nuclear Information System (INIS)

Geso, M.; Ackerly, T.; Clift, M.A.

2000-01-01

Full text: The measurement of depth doses and profiles for a stereotactic radiotherapy beam presents special problems associated with the small beam size compared to the dosimeter's active detection area. In this work a locally fabricated organic plastic scintillator detector has been used to measure the depth dose and profile of a stereotactic radiotherapy beam. The 6MV beam is 1.25 cm diameter at isocentre, typical of small field stereotactic radiosurgery. The detector is a water/tissue equivalent plastic scintillator that is accompanied by Cerenkov subtraction detector. In this particular application, a negligible amount of Cerenkov light was detected. A photodiode and an electronic circuit is used instead of a photomultiplier for signal amplification. Comparison with data using a diode detector and a small size ionization chamber, indicate that the organic plastic scintillator detector is a valid detector for stereotactic radiosurgery dosimetry. The tissue equivalence of the organic scintillator also holds the promise of accurate dosimetry in the build up region. Depth doses measured using our plastic scintillator agree to within about 1% with those obtained using commercially available silicon diodes. Beam profiles obtained using plastic scintillator presents correct field width to within 0.35 mm, however some artifacts are visible in the profiles. These artifacts are about 5% discrepancy which has been shown not to be a significant factor in stereotactic radiotherapy dosimetry. Copyright (2000) Australasian College of Physical Scientists and Engineers in Medicine

Symmetry tests with intense hadron beams

International Nuclear Information System (INIS)

Vogt, E.W.

1994-08-01

The Government of Canada has pulled the plug on funding of the KAON facility in Canada. But the science opportunities for symmetry tests with the kinds of beams that KAON would have provided remain. For example, the full intensity of kaons, which KAON would have provided, is needed to find the magnitude and phase of V td and therefore to describe direct CP violation. The combination of K + → π + ν ν - and K L o → π o ν ν - serve this purpose. A variety of other symmetry tests are possible with the kind of intense beams of kaons, antinucleons, other hadrons and neutrinos which KAON would have provided. A perspective will be given for such experiments and their future prospects, now that KAON will not be built. (author). 10 refs., 1 tab., 2 figs

Pilot test of flue gas treatment by electron beam

International Nuclear Information System (INIS)

Tokunaga, Okihiro

1995-01-01

The development of the technology of the desulfurization and denitration for flue gas by using electron beam was started in Japan in 1970s, and since then, the development research for putting it to practical use and the basic research on the subjects which must be resolved for promoting the practical use have been advanced. Based on these results, the verifying test using a pilot scale plant was carried out from 1991 to 1994 for the treatment of coal-burning flue gas, municipal waste-burning flue gas and highway tunnel exhaust gas. The operation of the pilot plant was already finished, and the conceptual design of a practical scale plant based on the results and the assessment of the economical efficiency were performed. As for the coal-burning flue gas treatment by using electron beam, the basic test, the pilot test and the conceptual design of a practical scale plant and the assessment of the economical efficiency are reported. As for the municipal waste-burning flue gas treatment by using electron beam, the basic test and the pilot test are reported. Also the pilot test on the denitration of exhaust gas in highway tunnels in reported. In Poland, the pilot test on the treatment of flue gas in coal-burning thermal power stations is carried out. In Germany, the technical development for cleaning the air contaminated by volatile organic compounds by electron beam irradiation is advanced. (K.I.)

Design, test, and calibration of an electrostatic beam position monitor

Directory of Open Access Journals (Sweden)

Maurice Cohen-Solal

2010-03-01

Full Text Available The low beta of proton or ion beams favors an electrostatic pickup to measure the transverse beam centroid position. Often papers on beam position monitors (BPM are focused on a particular aspect of the problem; however, it is important to consider all various issues of a position measurement system. Based on our experience at the IPHI (high intensity injector proton facility at CEA-Saclay, this paper will address all aspects to design, test, and calibrate a BPM for proton linear accelerators, while emphasizing the determination of the absolute beam position. We present details of the readout electronics, and describe the calibration of the BPM using a test station. For calculation and simulation of the electrical signals we developed a Mathematica script. The error analysis presented, on the basis of six BPMs installed in the high energy section of IPHI, demonstrates the expected accuracy of the position measurement. These studies also identify the parameters that could improve the performance of the beam position control. The experience from these developments is currently being used for the BPM design and test stand dedicated to the Spiral2 accelerator at Ganil-Caen which will deliver heavy ion beams.

Design, test, and calibration of an electrostatic beam position monitor

Science.gov (United States)

Cohen-Solal, Maurice

2010-03-01

The low beta of proton or ion beams favors an electrostatic pickup to measure the transverse beam centroid position. Often papers on beam position monitors (BPM) are focused on a particular aspect of the problem; however, it is important to consider all various issues of a position measurement system. Based on our experience at the IPHI (high intensity injector proton) facility at CEA-Saclay, this paper will address all aspects to design, test, and calibrate a BPM for proton linear accelerators, while emphasizing the determination of the absolute beam position. We present details of the readout electronics, and describe the calibration of the BPM using a test station. For calculation and simulation of the electrical signals we developed a Mathematica script. The error analysis presented, on the basis of six BPMs installed in the high energy section of IPHI, demonstrates the expected accuracy of the position measurement. These studies also identify the parameters that could improve the performance of the beam position control. The experience from these developments is currently being used for the BPM design and test stand dedicated to the Spiral2 accelerator at Ganil-Caen which will deliver heavy ion beams.

Autoionizing states in highly ionized oxygen, fluorine and silicon

International Nuclear Information System (INIS)

Forester, J.P.; Peterson, R.S.; Griffin, P.M.; Pegg, D.J.; Haselton, H.H.; Liao, K.H.; Sellin, I.A.; Mowat, J.R.; Thoe, R.S.

1975-01-01

Autoionizing states in high Z 3-electron ions associated with core excited configurations of the type 1s2snl and 1s2pnl are reported. The electron decay-in-flight spectra of lithium-like oxygen, fluorine, and silicon ions are presented. Initial beam energies of 6.75-MeV oxygen and fluorine ions and 22.5-MeV silicon ions were used. Stripping and excitation were done by passing the beams through a thin carbon foil. The experimental technique is described. 4 figs, 1 table, 7 refs

Selective Adsorption of Nano-bio materials and nanostructure fabrication on Molecular Resists Modified by proton beam irradiation

International Nuclear Information System (INIS)

Lee, H. W.; Kim, H. S.; Kim, S. M.

2008-04-01

The purpose of this research is the fabrication of nanostructures on silicon substrate using proton beam and selectively adsorption of bio-nano materials on the patterned substrate. Recently, the miniaturization of the integrated devices with fine functional structures was intensively investigated, based on combination of nanotechnology (NT), biotechnology (BT) and information technology (IT). Because of the inherent limitation in optical lithography, large variety of novel patterning technologies were evolved to construct nano-structures onto a substrate. Atomic force microscope-based nanolithography has readily formed sub-50 nm patterns by the local modification of a substrate using a probe with a curvature of 10 nm. The surface property was regarded as one of the most important factors for AFM-based nanolithography as well as for other novel nanolithographies. The molecular thin films such as a self-assembled monolayer or a polymer resist layer have been used as an alternative to modifying the surface property. Although proton or ion beam irradiation has been used as an efficient tool to modify the physical, chemical and electrical properties of a surface, the nano-patterning on the substrate or the molecular film modified with the beam irradiation has hardly been studied at both home and abroad. The selective adsorption of nano-bio materials such as carbon nanotubes and proteins on the patterns would contribute to developing the integrated devices. The polystyrene nanoparticles (400 nm) were arrayed on al silicon surface using nanosphere lithography and the various nanopatterns were fabricated by proton beam irradiation on the polystyrene nanoparticles arrayed silicon surface. We obtained the two different nanopatterns such as polymer nanoring patterns and silicon oxide patterns on the same silicon substrate. The polymer nanoring patterns formed by the crosslinkage of polystyrene when proton beam was irradiated at the triangular void spaces that are enclosed by

Full characterization of laser-accelerated ion beams using Faraday cup, silicon carbide, and single-crystal diamond detectors

Science.gov (United States)

Margarone, D.; Krása, J.; Giuffrida, L.; Picciotto, A.; Torrisi, L.; Nowak, T.; Musumeci, P.; Velyhan, A.; Prokůpek, J.; Láska, L.; Mocek, T.; Ullschmied, J.; Rus, B.

2011-05-01

Multi-MeV beams of light ions have been produced using the 300 picosecond, kJ-class iodine laser, operating at the Prague Asterix Laser System facility in Prague. Real-time ion diagnostics have been performed by the use of various time-of-flight (TOF) detectors: ion collectors (ICs) with and without absorber thin films, new prototypes of single-crystal diamond and silicon carbide detectors, and an electrostatic ion mass spectrometer (IEA). In order to suppress the long photopeak induced by soft X-rays and to avoid the overlap with the signal from ultrafast particles, the ICs have been shielded with Al foil filters. The application of large-bandgap semiconductor detectors (>3 eV) ensured cutting of the plasma-emitted visible and soft-UV radiation and enhancing the sensitivity to the very fast proton/ion beams. Employing the IEA spectrometer, various ion species and charge states in the expanding laser-plasma have been determined. Processing of the experimental data based on the TOF technique, including estimation of the plasma fast proton maximum and peak energy, ion beam currents and total charge, total number of fast protons, as well as deconvolution processes, ion stopping power, and ion/photon transmission calculations for the different metallic filters used, are reported.

Micro benchtop optics by bulk silicon micromachining

Science.gov (United States)

Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

2000-01-01

Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Drive beam stabilisation in the CLIC Test Facility 3

Science.gov (United States)

Malina, L.; Corsini, R.; Persson, T.; Skowroński, P. K.; Adli, E.

2018-06-01

The proposed Compact Linear Collider (CLIC) uses a high intensity, low energy drive beam to produce the RF power needed to accelerate a lower intensity main beam with 100 MV/m gradient. This scheme puts stringent requirements on drive beam stability in terms of phase, energy and current. The consequent experimental work was carried out in CLIC Test Facility CTF3. In this paper, we present a novel analysis technique in accelerator physics to find beam drifts and their sources in the vast amount of the continuously gathered signals. The instability sources are identified and adequately mitigated either by hardware improvements or by implementation and commissioning of various feedbacks, mostly beam-based. The resulting drive beam stability is of 0.2°@ 3 GHz in phase, 0.08% in relative beam energy and about 0.2% beam current. Finally, we propose a stabilisation concept for CLIC to guarantee the main beam stability.

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

Science.gov (United States)

Matsusue, K.; Takahara, K.; Hashimoto, R.

1984-01-01

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Brookhaven National Laboratory electron beam test stand

International Nuclear Information System (INIS)

Pikin, A.; Alessi, J.; Beebe, E.; Kponou, A.; Prelec, K.; Snydstrup, L.

1998-01-01

The main purpose of the electron beam test stand (EBTS) project at the Brookhaven National Laboratory is to build a versatile device to develop technologies that are relevant for a high intensity electron beam ion source (EBIS) and to study the physics of ion confinement in a trap. The EBTS will have all the main attributes of EBIS: a 1-m-long, 5 T superconducting solenoid, electron gun, drift tube structure, electron collector, vacuum system, ion injection system, appropriate control, and instrumentation. Therefore it can be considered a short prototype of an EBIS for a relativistic heavy ion collider. The drift tube structure will be mounted in a vacuum tube inside a open-quotes warmclose quotes bore of a superconducting solenoid, it will be at room temperature, and its design will employ ultrahigh vacuum technology to reach the 10 -10 Torr level. The first gun to be tested will be a 10 A electron gun with high emission density and magnetic compression of the electron beam. copyright 1998 American Institute of Physics

Electron beam effects on VLSI MOS conditions for testing and reconfiguration

International Nuclear Information System (INIS)

Girard, P.; Roche, F.M.; Pistoulet, B.

1986-01-01

Wafer scale integrated-MOS circuits problems related to test and reconfiguration by electron beams are analyzed. First of all the alterations in characteristics of MOS circuits submitted to an electron beam testing are considered. Then the capabilities of reconfiguration by an electron beam bombardment are discussed. The various phenomena involved are reviewed. Experimental data are reported and discussed on the light of data of the literature. (Auth.)

One primary collimator with optional crystal feature, tested with beam

CERN Document Server

EuCARD, Collaboration

2014-01-01

The WP8 of EuCARD aims at the design of more advanced materials and collimator concepts for high beam power in particle accelerators like LHC and FAIR. Deliverable 8.3.1 concerned the production and the validation by beam tests of an advanced collimator prototype to improve various aspects of the LHC collimation system, such as the accuracy of the collimator jaw alignment to the circulating beam, the duration of collimator setup time and the overall halo cleaning performance. A collimator prototype was built and installed in the SPS for beam tests in the running period between 2010 and 2012. Crystal collimation aspects were dealt with in a dedicated SPS experiment, which also profited from EuCARD contributions.

Trigger and DAQ in the Combined Test Beam

CERN Multimedia

Dobson, M; Padilla, C

2004-01-01

Introduction During the Combined Test Beam the latest prototype of the ATLAS Trigger and DAQ system is being used to support the data taking of all the detectors. Further development of the TDAQ subsystems benefits from the direct experience given by the integration in the beam test. Support of detectors for the Combined Test Beam All ATLAS detectors need their own detector-specific DAQ development. The readout electronics is controlled by a Readout Driver (ROD), custom-built for each detector. The ROD receives data for events that are accepted by the first level trigger. The detector-specific part of the DAQ system needs to control the ROD and to respond to commands of the central DAQ (e.g. to "Start" a run). The ROD module then sends event data to a Readout System (ROS), a PC with special receiver modules/buffers. At this point the data enters the realm of the ATLAS DAQ and High Level Trigger system, constructed from Linux PCs connected with gigabit Ethernet networks. Most ATLAS detectors, representing s...

Three-dimensional patterning in polymer optical waveguides using focused ion beam milling

Science.gov (United States)

Kruse, Kevin; Burrell, Derek; Middlebrook, Christopher

2016-07-01

Waveguide (WG) photonic-bridge taper modules are designed for symmetric planar coupling between silicon WGs and single-mode fibers (SMFs) to minimize photonic chip and packaging footprint requirements with improving broadband functionality. Micromachined fabrication and evaluation of polymer WG tapers utilizing high-resolution focused ion beam (FIB) milling is performed and presented. Polymer etch rates utilizing the FIB and optimal methods for milling polymer tapers are identified for three-dimensional patterning. Polymer WG tapers with low sidewall roughness are manufactured utilizing FIB milling and optically tested for fabrication loss. FIB platforms utilize a focused beam of ions (Ga+) to etch submicron patterns into substrates. Fabricating low-loss polymer WG taper prototypes with the FIB before moving on to mass-production techniques provides theoretical understanding of the polymer taper and its feasibility for connectorization devices between silicon WGs and SMFs.

Silicon-substituted hydroxyapatite coating with Si content on the nanotube-formed Ti–Nb–Zr alloy using electron beam-physical vapor deposition

International Nuclear Information System (INIS)

Jeong, Yong-Hoon; Choe, Han-Cheol; Brantley, William A.

2013-01-01

The purpose of this study was to investigate the electrochemical characteristics of silicon-substituted hydroxyapatite coatings on the nanotube-formed Ti–35Nb–10Zr alloy. The silicon-substituted hydroxyapatite (Si–HA) coatings on the nanotube structure were deposited by electron beam-physical vapor deposition and anodization methods, and biodegradation properties were analyzed by potentiodynamic polarization and electrochemical impedance spectroscopy measurement. The surface characteristics were analyzed by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction (XRD). The Si–HA layers were deposited with rough features having highly ordered nanotube structures on the titanium alloy substrate. The thickness of the Si–HA coating was less than that of the HA coating. The XRD results confirmed that the Si–HA coating on the nanotube structure consisted of TiO 2 anatase, TiO 2 rutile, hydroxyapatite, and calcium phosphate silicate. The Si–HA coating surface exhibited lower I corr than the HA coating, and the polarization resistance was increased by substitution of silicon in hydroxyapatite. - Highlights: • Silicon substituted hydroxyapatite (Si–HA) was coated on nanotubular titanium alloy. • The Si–HA coating thickness was less than single hydroxyapatite (HA) coating. • Si–HA coatings consisted of TiO 2 , HA, and Ca 5 (PO 4 ) 2 SiO 4 . • Polarization resistance of the coating was increased by Si substitution in HA

Organization of silicon nanocrystals by localized electrochemical etching

International Nuclear Information System (INIS)

Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

2009-01-01

An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

The Silicon Vertex Detector for b-tagging at Belle II

International Nuclear Information System (INIS)

Valentan, M.

2013-01-01

building a high luminosity B factory and a high precision particle detector, and an introduction to the Belle II experiment, outlining purpose and working principle of the involved subdetectors. More details are given on the Belle II SVD, including mechanical structure, sensors, electrical readout and cooling. Furthermore, the basics of semiconductor physics and silicon processing are reviewed, and the principles of single-sided and double-sided silicon microstrip sensors are explained in detail. The author's main task was to develop a trapezoidal double-sided silicon microstrip sensor for the forward region of the Belle II SVD, from the initial CAD drawings to the production. He developed a software framework aiming at fast and flexible design of double-sided silicon microstrip sensors, both for rectangular and trapezoidal shapes. Using this framework, a whole wafer was equipped with a full-scale trapezoidal sensor, several test sensors for optimising the layout, and test structures. Several batches of prototype sensors were produced by Micron Semiconductor Ltd. in England, in close collaboration with the author. The wafer contains small test sensors dedicated to investigating the strip insulation on the n-side, featuring the p-stop blocking method (in three geometry patterns: atoll, common and a combined variant) and of the p-spray blocking method. These sensors have been extensively tested by the author in particle beams and gamma irradiations, showing that the atoll p-stop pattern is best suited for application at Belle II. The full-scale prototype sensors were thoroughly tested by the author in the semiconductor laboratory and in particle beams, long-term stability has been demonstrated by irradiation and thermal cycling campaigns. The knowledge gained by examining the test sensors and full-scale sensors led to an update of the design of the full-scale sensor. After production of another prototype batch the updated design was evaluated, compliance with the

Preparation of HEC Serial Modules for Beam and Cold Tests at CERN in 2000

CERN Multimedia

Fischer, A.

2001-01-01

Photo 1 - Three mated HEC-1 modules in the clean room, prepared for beam tests. Photo 2 - Three mated HEC-1 modules in the clean room, prepared for beam tests. Photo 3 - Three mated HEC-2 modules in the clean room, prepared for beam tests. Photo 4 - Three mated HEC-2 modules in the clean room, prepared for beam tests. Photo 5 - Close-up of the inner-connecting bars of three mated HEC-2 modules, prepared for beam tests. Photo 6 - Mechanical acceptance tests for HEC serial modules at CERN. Photo 7 - Mechanical acceptance tests for HEC serial modules at CERN. Photo 8 - Four HEC-2 modules in the cryostat, prepared for cold tests.

Two frequency beam-loading compensation in the drive-beam accelerator of the CLIC Test Facility

CERN Document Server

Braun, Hans Heinrich

1999-01-01

The CLIC Test Facility (CTF) is a prototype two-beam accelerator, in which a high-current "drive beam" is used to generate the RF power for the main-beam accelerator. The drive-beam accelerator consists of two S-band structures which accelerate a bunch train with a total charge of 500 nC. The substantial beam loading is compensated by operating the two accelerating structures at 7.81 MHz above and below the bunch repetition frequency, respectively. This introduces a change of RF phase from bunch to bunch, which leads, together with off-crest injection into the accelerator, to an approximate compensation of the beam loading. Due to the sinusoidal time-dependency of the RF field, an energy spread of about 7% remains in the bunch train. A set of idler cavities has been installed to reduce this residual energy spread further. In this paper, the considerations that motivated the choice of the parameters of the beam-loading compensation system, together with the experimental results, are presented.

Electron-beam deposition of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

2013-06-15

Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

Design and Tests of the Silicon Sensors for the ZEUS Micro Vertex Detector