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Sample records for ternary iii-v solar

  1. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  2. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  3. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  4. Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

    Science.gov (United States)

    Dubrovskii, V. G.

    2017-11-01

    Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

  5. Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hermle, Martin

    2008-11-27

    This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

  6. III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

    Science.gov (United States)

    Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

    2018-04-01

    Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

  7. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.; Chroneos, Alexander; Grimes, R. W.; Jiang, C.; Schwingenschlö gl, Udo

    2010-01-01

    the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a

  8. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.

    2010-08-03

    Vegard’s law states that, at a constant temperature, the volume of an alloy can be determined from a linear interpolation of its constituent’s volumes. Deviations from this description occur such that volumes are both greater and smaller than the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a tendency, with the exception of AlxGa1−xAs, for the volume of the ternary alloys to be smaller than that determined from the linear interpolation of the volumes of the MAs and BAs binary alloys. Importantly, we establish a simple relationship linking the relative size of the group III atoms in the alloy and the predicted magnitude of the deviation from Vegard’s law.

  9. Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

    Science.gov (United States)

    Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

    2017-05-01

    III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

  10. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    Science.gov (United States)

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  11. Influence of light waves on the thermoelectric power under large magnetic field in III-V, ternary and quaternary materials

    Energy Technology Data Exchange (ETDEWEB)

    Ghatak, K.P. [Department of Electronic Science, The University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata 700 009 (India); Bhattacharya, S. [Post Graduate Department of Computer Science, St. Xavier' s College, 30 Park Street, Kolkata 700 016 (India); Pahari, S. [Department of Administration, Jadavpur University, Kolkata 700 032 (India); De, D. [Department of Computer Science and Engineering, West Bengal University of Technology, B. F. 142, Sector I, Salt Lake, Kolkata 700 064 (India); Ghosh, S.; Mitra, M. [Department of Electronics and Telecommunication Engineering, Bengal Engineering and Science University, Howrah 711 103 (India)

    2008-04-15

    We study theoretically the influence of light waves on the thermoelectric power under large magnetic field (TPM) for III-V, ternary and quaternary materials, whose unperturbed energy-band structures, are defined by the three-band model of Kane. The solution of the Boltzmann transport equation on the basis of this newly formulated electron dispersion law will introduce new physical ideas and experimental findings in the presence of external photoexcitation. It has been found by taking n-InAs, n-InSb, n-Hg{sub 1-x}Cd{sub x}Te and n-In{sub 1-x}Ga{sub x}As{sub y}P{sub 1-y} lattice matched to InP as examples that the TPM decreases with increase in electron concentration, and increases with increase in intensity and wavelength, respectively in various manners. The strong dependence of the TPM on both light intensity and wavelength reflects the direct signature of light waves that is in direct contrast as compared with the corresponding bulk specimens of the said materials in the absence of external photoexcitation. The rate of change is totally band-structure dependent and is significantly influenced by the presence of the different energy-band constants. The well-known result for the TPM for nondegenerate wide-gap materials in the absence of light waves has been obtained as a special case of the present analysis under certain limiting conditions and this compatibility is the indirect test of our generalized formalism. Besides, we have also suggested the experimental methods of determining the Einstein relation for the diffusivity:mobility ratio, the Debye screening length and the electronic contribution to the elastic constants for materials having arbitrary dispersion laws. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  12. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  13. Optical analysis of a III-V-nanowire-array-on-Si dual junction solar cell.

    Science.gov (United States)

    Chen, Yang; Höhn, Oliver; Tucher, Nico; Pistol, Mats-Erik; Anttu, Nicklas

    2017-08-07

    A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success with such applications, the geometry of the system must be optimized for absorption of sunlight. Here, we consider this absorption through optics modeling. Similarly, as for a bulk dual-junction tandem system on a silicon bottom cell, a bandgap of approximately 1.7 eV is optimum for the nanowire top cell. First, we consider a simplified system of bare, uncoated III-V nanowires on the silicon substrate and optimize the absorption in the nanowires. We find that an optimum absorption in 2000 nm long nanowires is reached for a dense array of approximately 15 nanowires per square micrometer. However, when we coat such an array with a conformal indium tin oxide (ITO) top contact layer, a substantial absorption loss occurs in the ITO. This ITO could absorb 37% of the low energy photons intended for the silicon subcell. By moving to a design with a 50 nm thick, planarized ITO top layer, we can reduce this ITO absorption to 5%. However, such a planarized design introduces additional reflection losses. We show that these reflection losses can be reduced with a 100 nm thick SiO 2 anti-reflection coating on top of the ITO layer. When we at the same time include a Si 3 N 4 layer with a thickness of 90 nm on the silicon surface between the nanowires, we can reduce the average reflection loss of the silicon cell from 17% to 4%. Finally, we show that different approximate models for the absorption in the silicon substrate can lead to a 15% variation in the estimated photocurrent density in the silicon subcell.

  14. Progress in the development of metamorphic multi-junction III-V space solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sinharoy, S.; Patton, M.O.; Valko, T.M.; Weizer, V.G. [Essential Research Inc., Cleveland, OH (United States)

    2002-07-01

    Theoretical calculations have shown that highest-efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single-junction 1.1 and 1.2 eV InGaAs solar cells, interest has grown in the development of multi-junction cells of this type, using graded buffer layer technology. Essential Research Incorporated (ERI) is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AMO), one-sun efficiency of 27%, and 100-sun efficiency of 31.1%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort involves the development of a 2.1 eV A1GaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AMO efficiency 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. For the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper. (author)

  15. Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

    Science.gov (United States)

    García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

    2012-10-01

    Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

  16. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    Science.gov (United States)

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  17. Theoretical modeling of a new structure of III-V tandem solar cells by ...

    African Journals Online (AJOL)

    junction solar cell is theoretically investigated by optimizing the thickness of GaAs and GaInPandusing a new optical model to separate the junction between the two solar cell in order to solve problems of tunnel junction and difficulties of fabrication.

  18. Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

    International Nuclear Information System (INIS)

    Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

    2006-01-01

    Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

  19. Modeling Three-Terminal III-V/Si Tandem Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul; Tamboli, Adele C.

    2017-06-27

    Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

  20. Indacenodithienothiophene-Based Ternary Organic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gasparini, Nicola, E-mail: nicola.gasparini@fau.de [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany); García-Rodríguez, Amaranda [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Prosa, Mario [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), Bologna (Italy); Bayseç, Şebnem; Palma-Cando, Alex [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Katsouras, Athanasios; Avgeropoulos, Apostolos [Department of Materials Science Engineering, University of Ioannina, Ioannina (Greece); Pagona, Georgia; Gregoriou, Vasilis G. [Advent Technologies SA, Patras Science Park, Patra (Greece); National Hellenic Research Foundation (NHRF), Athens (Greece); Chochos, Christos L. [Department of Materials Science Engineering, University of Ioannina, Ioannina (Greece); Advent Technologies SA, Patras Science Park, Patra (Greece); Allard, Sybille; Scherf, Ulrich [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Brabec, Christoph J. [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany); Bavarian Center for Applied Energy Research (ZAE Bayern), Erlangen (Germany); Ameri, Tayebeh, E-mail: nicola.gasparini@fau.de [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany)

    2017-01-13

    One of the key aspects to achieve high efficiency in ternary bulk-hetorojunction solar cells is the physical and chemical compatibility between the donor materials. Here, we report the synthesis of a novel conjugated polymer (P1) containing alternating pyridyl[2,1,3]thiadiazole between two different donor fragments, dithienosilole and indacenodithienothiophene (IDTT), used as a sensitizer in a host system of indacenodithieno[3,2-b]thiophene,2,3-bis(3-(octyloxy)phenyl)quinoxaline (PIDTTQ) and [6,6]-phenyl C{sub 70} butyric acid methyl ester (PC{sub 71}BM). We found that the use of the same IDTT unit in the host and guest materials does not lead to significant changes in the morphology of the ternary blend compared to the host binary. With the complementary use of optoelectronic characterizations, we found that the ternary cells suffer from a lower mobility-lifetime (μτ) product, adversely impacting the fill factor. However, the significant light harvesting in the near infrared region improvement, compensating the transport losses, results in an overall power conversion efficiency enhancement of ~7% for ternary blends as compared to the PIDTTQ:PC{sub 71}BM devices.

  1. Advances in High-Efficiency III-V Multijunction Solar Cells

    Directory of Open Access Journals (Sweden)

    Richard R. King

    2007-01-01

    Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

  2. Reduction of bonding resistance of two-terminal III-V/Si tandem solar cells fabricated using smart-stack technology

    Science.gov (United States)

    Baba, Masaaki; Makita, Kikuo; Mizuno, Hidenori; Takato, Hidetaka; Sugaya, Takeyoshi; Yamada, Noboru

    2017-12-01

    This paper describes a method that remarkably reduces the bonding resistance of mechanically stacked two-terminal GaAs/Si and InGaP/Si tandem solar cells, where the top and bottom cells are bonded using a Pd nanoparticle array. A transparent conductive oxide (TCO) layer, which partially covers the surface of the Si bottom cell below the electrodes of the III-V top cell, significantly enhances the fill factor (FF) and cell conversion efficiency. The partial TCO layer reduces the bonding resistance and thus, increases the FF and efficiency of InGaP/Si by factors of 1.20 and 1.11, respectively. Eventually, the efficiency exceeds 15%. Minimizing the optical losses at the bonding interfaces of the TCO layer is important in the fabrication of high-efficiency solar cells. To help facilitate this, the optical losses in the tandem solar cells are thoroughly characterized through optical simulations and experimental verifications.

  3. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  4. Spectral responses in near-infrared of the mixed compounds III-V ternary and quaternary, based on GaSb

    Science.gov (United States)

    Mbow, B.; Rezzoug, N.; Peremarti, C.; Mezerreg, A.; Llinares, C.

    1993-09-01

    From the simulation of the spectral response of the different photodetector devices elaborated in our laboratory (C.E.M.), we determine the influence of geometrical and physical parameters in order to achieve the best photodetector operating at the wavelength 2.55 μm. In this paper we present: Gao{0.6}In{0.4}Sbn/Ga{0.6}In{0.4}Sbp homojunctions matched on GaSbp substrate, Ga{0.75}In{0.25}As{0.23}Sbp/GaSbn ternary heterojunction and GaSbp/Ga{0.74}In{0.26}As{0.23}Sb0.77p/GaSbn quaternary heterojunction. The GaSbp layer with an energy band gap greater than Ga{0.74}In{0.26}As{0.23}Sb0.77p optical gap will act as a window, reducing the effect of surface recombinaison. Results of the simulation are compared to experimental curves to determine the values of photoelectrical parameters (diffusion length, recombination velocity at the surface ...). Les mesures de réponse spectrale dans la gamme [0,4 eV à 2 eV] ont été effectuées sur des homojonctions, Ga{0,6}In{0,4}Sbn/Ga{0,6}In{0,4}Sbp déposées sur un substrat de GaSb et des hétérostructures ternaires Ga{0,75}In{0,25}Sbp/GaSbn et quaternaires GaSbp/Ga{0,74}In{0,26}As{0,23}Sb0,77p/GaSbn. La couche de GaSbp avec un gap plus grand que celui de Ga{0,74}In{0,26}As{0,23}Sb0,77p joue le rôle d'effet fenêtre. En s'appuyant sur les résultats de la simulation et en accordant les spectres expérimentaux aux spectres théoriques, on détermine les valeurs des paramètres photoélectriques (longueurs de diffusion, les vitesses de recombinaison en surface ... ) intervenant dans le rendement quantique.

  5. Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

    OpenAIRE

    Espinet González, Pilar; Algora del Valle, Carlos; Orlando Carrillo, Vincenzo; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Bautista Villares, Jesus; Xiugang, He; Barrutia Poncela, Laura; Rey-Stolle Prado, Ignacio; Araki, Kenji

    2012-01-01

    A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three e...

  6. Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

    Science.gov (United States)

    Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin; hide

    2006-01-01

    This paper reports the results of an international measurement round robin of monolithic, triple-junction, GaInP/GaAs/Ge space solar cells. Eight laboratories representing national labs, solar cell vendors and space solar cell consumers, measured cells using in-house reference cells and compared those results to measurements made where each lab used the same set of reference cells. The results show that most of the discrepancy between laboratories is likely due to the quality of the standard cells rather than the measurement system or solar simulator used.

  7. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  8. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

    2014-01-01

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  9. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

    2014-05-15

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  10. Technological development for super-high efficiency solar cells. Technological development for crystalline compound solar cells (high-efficiency III-V tandem solar cells); Chokokoritsu taiyo denchi no gijutsu kaihatsu. Kessho kagobutsu taiyo denchi no gijutsu kaihatsu (III-V zoku kagobutsu handotai taiyo denchi no gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Tatsuta, M [New Energy and Industrial Technology Development Organization, Tokyo (Japan)

    1994-12-01

    This paper reports the study results on technological development of III-V compound semiconductor solar cells in fiscal 1994. (1) On development of epitaxial growth technology of lattice mismatching systems, the optimum structure of InGaAs strain intermediate layers was studied for reducing a dislocation density by lattice mismatching of GaAs layer grown on Si substrate and difference in thermal expansion coefficient. The effect of strain layer on dislocation reduction was found only at 250dyne/cm in strain energy. Growth of GaAs layers on the Si substrate treated by hydrofluoric acid at low temperature was attempted by MBE method. As a dislocation distribution was controlled by laying different atoms at hetero-interface, the dislocation density of growing layer surfaces decreased by concentration of dislocation at hetero-interface. (2) On development of high-efficiency tandem cell structure, tunnel junction characteristics, cell formation process and optimum design method of lattice matching tandem cells were studied, while thin film cell formation was basically studied for lattice mismatching tandem cells. 45 figs., 8 tabs.

  11. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  12. Organic Solar Cells beyond One Pair of Donor-Acceptor: Ternary Blends and More.

    Science.gov (United States)

    Yang, Liqiang; Yan, Liang; You, Wei

    2013-06-06

    Ternary solar cells enjoy both an increased light absorption width, and an easy fabrication process associated with their simple structures. Significant progress has been made for such solar cells with demonstrated efficiencies over 7%; however, their fundamental working principles are still under investigation. This Perspective is intended to offer our insights on the three major governing mechanisms in these intriguing ternary solar cells: charge transfer, energy transfer, and parallel-linkage. Through careful analysis of exemplary cases, we summarize the advantages and limitations of these three major mechanisms and suggest future research directions. For example, incorporating additional singlet fission or upconversion materials into the energy transfer dominant ternary solar cells has the potential to break the theoretical efficiency limit in single junction organic solar cells. Clearly, a feedback loop between fundamental understanding and materials selection is in urgent need to accelerate the efficiency improvement of these ternary solar cells.

  13. Ternary semitransparent organic solar cells with a laminated top electrode.

    Science.gov (United States)

    Makha, Mohammed; Testa, Paolo; Anantharaman, Surendra Babu; Heier, Jakob; Jenatsch, Sandra; Leclaire, Nicolas; Tisserant, Jean-Nicolas; Véron, Anna C; Wang, Lei; Nüesch, Frank; Hany, Roland

    2017-01-01

    Tinted and colour-neutral semitransparent organic photovoltaic elements are of interest for building-integrated applications in windows, on glass roofs or on facades. We demonstrate a semitransparent organic photovoltaic cell with a dry-laminated top electrode that achieves a uniform average visible transmittance of 51% and a power conversion efficiency of 3%. The photo-active material is based on a majority blend composed of a visibly absorbing donor polymer and a fullerene acceptor, to which a selective near-infrared absorbing cyanine dye is added as a minority component. Our results show that organic ternary blends are attractive for the fabrication of semitransparent solar cells in general, because a guest component with a complementary absorption can compensate for the inevitably reduced current generation capability of a high-performing binary blend when applied as a thin, semitransparent film.

  14. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-01-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS

  15. Development of III-V/Si Multijunction Space Photovoltaics

    Data.gov (United States)

    National Aeronautics and Space Administration — High substrate costs, as well as weight, typically play a major role in the high costs of multijunction space solar cell production and deployment. III-V/Si...

  16. GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

    Science.gov (United States)

    Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

    2015-03-01

    GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

  17. High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes.

    Science.gov (United States)

    Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

    2015-06-04

    The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the ternary blend. Detailed studies unravel that the improved performance results from synergistic effects of enlarged open circuit voltage, suppressed trap-assisted recombination, enhanced light absorption, increased hole extraction, efficient energy transfer and better morphology. The working mechanism and high device performance demonstrate new insights and design guidelines for high-performance ternary blend solar cells and suggest that ternary structure is a promising platform to boost the efficiency of OSCs.

  18. Desarrollo de la tecnología de MOVPE para el crecimiento de semiconductores III-V : fabricación de células solares para concentraciones luminosas elevadas

    OpenAIRE

    Galiana Blanco, Beatriz

    2011-01-01

    El trabajo de estas tesis trata sobre el desarrollo en el IES-UPM de la tecnología de crecimiento epitaxial de fase vapor mediante precursores metalorgánicos (MOVPE) para el crecimiento de células solares de semiconductores III-V para concentraciones luminosas elevadas. En la primera parte de la memoria se presentan los principios de la MOVPE y el estudio de los materiales semiconductores utilizados a lo largo de la tesis: GaAs, AlGaAs, GaInP y AlInP. Para ello, se ha analizado cómo influ...

  19. High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

    OpenAIRE

    Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

    2015-01-01

    The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the...

  20. Ternary Blend Composed of Two Organic Donors and One Acceptor for Active Layer of High-Performance Organic Solar Cells.

    Science.gov (United States)

    Lee, Jong Won; Choi, Yoon Suk; Ahn, Hyungju; Jo, Won Ho

    2016-05-04

    Ternary blends composed of two donor absorbers with complementary absorptions provide an opportunity to enhance the short-circuit current and thus the power conversion efficiency (PCE) of organic solar cells. In addition to complementary absorption of two donors, ternary blends may exhibit favorable morphology for high-performance solar cells when one chooses properly the donor pair. For this purpose, we develop a ternary blend with two donors (diketopyrrolopyrrole-based polymer (PTDPP2T) and small molecule ((TDPP)2Ph)) and one acceptor (PC71BM). The solar cell made of a ternary blend with 10 wt % (TDPP)2Ph exhibits higher PCE of 7.49% as compared with the solar cells with binary blends, PTDPP2T:PC71BM (6.58%) and (TDPP)2Ph:PC71BM (3.21%). The higher PCE of the ternary blend solar cell is attributed mainly to complementary absorption of two donors. However, a further increase in (TDPP)2Ph content in the ternary blend (>10 wt %) decreases the PCE. The ternary blend with 10 wt % (TDPP)2Ph exhibits well-developed morphology with narrow-sized fibrils while the blend with 15 wt % (TDPP)2Ph shows phase separation with large-sized domains, demonstrating that the phase morphology and compatibility of ternary blend are important factors to achieve a high-performance solar cell made of ternary blends.

  1. Back reflectors based on buried Al{sub 2}O{sub 3} for enhancement of photon recycling in monolithic, on-substrate III-V solar cells

    Energy Technology Data Exchange (ETDEWEB)

    García, I. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain); Kearns-McCoy, C. F. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Ward, J. S.; Steiner, M. A.; Geisz, J. F.; Kurtz, S. R. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2014-09-29

    Photon management has been shown to be a fruitful way to boost the open circuit voltage and efficiency of high quality solar cells. Metal or low-index dielectric-based back reflectors can be used to confine the reemitted photons and enhance photon recycling. Gaining access to the back of the solar cell for placing these reflectors implies having to remove the substrate, with the associated added complexity to the solar cell manufacturing. In this work, we analyze the effectiveness of a single-layer reflector placed at the back of on-substrate solar cells, and assess the photon recycling improvement as a function of the refractive index of this layer. Al{sub 2}O{sub 3}-based reflectors, created by lateral oxidation of an AlAs layer, are identified as a feasible choice for on-substrate solar cells, which can produce a V{sub oc} increase of around 65% of the maximum increase attainable with an ideal reflector. The experimental results obtained using prototype GaAs cell structures show a greater than two-fold increase in the external radiative efficiency and a V{sub oc} increase of ∼2% (∼18 mV), consistent with theoretical calculations. For GaAs cells with higher internal luminescence, this V{sub oc} boost is calculated to be up to 4% relative (36 mV), which directly translates into at least 4% higher relative efficiency.

  2. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  3. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for development of extra-high efficiency solar cells (fundamental research on extra-high efficiency III-V compound semiconductor tandem solar cells); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Chokokoritsu taiyo denchi no gijutsu kaihatsu no tame no kaiseki hyoka (chokokoritsu III-V zoku kagobutsu taiyo denchi gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    Sekikawa, T; Kawanami, H; Sakata, I; Nagai, K; Matsumoto, K; Miki, K [Electrotechnical Laboratory, Tsukuba (Japan)

    1994-12-01

    Described herein are the results of the FY1994 research program for development of extra-high efficiency III-V compound semiconductor tandem solar cells. Heteroepitaxial structures of compound semiconductors, such as GaAs, on silicon substrates are analyzed and evaluated by EXAFS, Raman and RHEED for the initial stage of the film growth and heterointerfaces. The device capable of in-situ observation of the growing surface structures during the period of heteroepitaxial film growth is introduced, to investigate the effects of rise-up and initial growth conditions on defects. The effects of atomic hydrogen on growth of a GaAs film on a silicon substrate are investigated from photoluminescence and solar cell characteristics, to confirm the effects of reducing defects. Heteroepitaxial growth of InGaP, which has the optimum band width for forming multi-junction silicon solar cells, on a silicon substrate is investigated, to find that an interfacial buffer layer is necessary to form a good film. 2 figs.

  4. Analysis of the suitability of Al{sub x}Ga{sub 1-x}As as active material in III-V multiple-junction solar cells; Analyse zur Eignung von Al{sub x}Ga{sub 1-x}As als aktives Material in III-V Mehrfachsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Heckelmann, Stefan

    2017-05-01

    In the past, Al{sub x}Ga{sub 1-x}As single and multiple-junction solar cells have been manufactured and tested. Although the ternary Al{sub x}Ga{sub 1-x}As is one of the most studied semiconductor systems, the results have often lagged behind expectations. In the thesis presented here, for the first time, the deep understanding of the Al{sub x}Ga{sub 1-x}As material system resulting from material analysis was linked with its application in solar cells. As has been shown, many cell results can only be explained if the peculiarities of the material, in particular the formation of DX centers and the transition from direct to indirect semiconductor, are also included. From this purposeful consideration of the material in terms of its usefulness in the semiconductor device and the technological significance of individual properties, not only high-quality solar cells based on Al{sub x}Ga{sub 1-x}As were produced but also new insights into the material properties of (Al{sub y}Ga{sub 1-y}){sub 1-z}In{sub z}As and the information gain from photoluminescence measurements can be significantly increased. [German] In der Vergangenheit wurden bereits Einfach- und Mehrfachsolarzellen aus Al{sub x}Ga{sub 1-x}As hergestellt und untersucht. Obwohl das ternaere Al{sub x}Ga{sub 1-x}As eines der meist untersuchten Halbleitersysteme ist, blieben die Ergebnisse oft hinter den Erwartungen zurueck. In der hier vorgestellten Dissertation wurde zum ersten Mal das aus der Materialanalytik heraus entstandene, tiefe Verstaendnis ueber das AlxGa1-xAs Materialsystem mit seiner Anwendung in Solarzellen verknuepft. Wie sich gezeigt hat, werden viele Zellergebnisse erst erklaerbar, wenn auch die Besonderheiten des Materials, insbesondere die Bildung von DX-Zentren und der Uebergang vom direkten zum indirekten Halbleiter, mit einbezogen werden. Aus dieser zielgerichteten Betrachtung des Materials im Hinblick auf seinen Nutzen im Halbleiterbauelement und der technologischen Bedeutung einzelner

  5. Relationship between type III-V radio and hard X-ray bursts

    International Nuclear Information System (INIS)

    Stewart, R.T.

    1978-01-01

    Type III-V radio bursts are found to be closely associated with impulsive hard X-ray bursts. Probably 0.1% to 1% of the fast electrons in the X-ray source region escape to heights >0.1 solar radii in the corona and excite the type III-V burst. (Auth.)

  6. Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

    Science.gov (United States)

    Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

    2017-06-01

    Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  8. Towards III-V solar cells on Si: Improvement in the crystalline quality of Ge-on-Si virtual substrates through low porosity porous silicon buffer layer and annealing

    International Nuclear Information System (INIS)

    Calabrese, Gabriele; Baricordi, Stefano; Bernardoni, Paolo; Fin, Samuele; Guidi, Vincenzo; Vincenzi, Donato

    2014-01-01

    A comparison between the crystalline quality of Ge grown on bulk Si and on a low porosity porous Si (pSi) buffer layer using low energy plasma enhanced chemical vapor deposition is reported. Omega/2Theta coupled scans around the Ge and Si (004) diffraction peaks show a reduction of the Ge full-width at half maximum (FWHM) of 22.4% in presence of the pSi buffer layer, indicating it is effective in improving the epilayer crystalline quality. At the same time atomic force microscopy analysis shows an increase in root means square roughness for Ge grown on pSi from 38.5 nm to 48.0 nm, as a consequence of the larger surface roughness of pSi compared to bulk Si. The effect of 20 minutes vacuum annealing at 580°C is also investigated. The annealing leads to a FWHM reduction of 23% for Ge grown on Si and of 36.5% for Ge on pSi, resulting in a FWHM of 101 arcsec in the latter case. At the same time, the RMS roughness is reduced of 8.8% and of 46.5% for Ge grown on bulk Si and on pSi, respectively. The biggest improvement in the crystalline quality of Ge grown on pSi with respect to Ge grown on bulk Si observed after annealing is a consequence of the simultaneous reorganization of the Ge epilayer and the buffer layer driven by energy minimization. A low porosity buffer layer can thus be used for the growth of low defect density Ge on Si virtual substrates for the successive integration of III-V multijunction solar cells on Si. The suggested approach is simple and fast –thus allowing for high throughput-, moreover is cost effective and fully compatible with subsequent wafer processing. Finally it does not introduce new chemicals in the solar cell fabrication process and can be scaled to large area silicon wafers

  9. High Performing Ternary Solar Cells through Förster Resonance Energy Transfer between Nonfullerene Acceptors.

    Science.gov (United States)

    Yang, Lei; Gu, Wenxing; Hong, Ling; Mi, Yang; Liu, Feng; Liu, Ming; Yang, Yufei; Sharma, Bigyan; Liu, Xinfeng; Huang, Hui

    2017-08-16

    Nonradiative Förster resonance energy transfer (FRET) is an important mechanism of organic solar cells, which can improve the exciton migration over a long distance, resulting in improvement of efficiency of solar cells. However, the current observations of FRET are very limited, and the efficiencies are less than 9%. In this study, FRET effect was first observed between two nonfullerene acceptors in ternary solar cells, which improved both the absorption range and exciton harvesting, leading to the dramatic enhancement in the short circuit current and power conversion efficiency. Moreover, this strategy is proved to be a versatile platform for conjugated polymers with different bandgaps, resulting in a remarkable efficiency of 10.4%. These results demonstrated a novel method to enhance the efficiency of organic soar cells.

  10. Study of a ternary blend system for bulk heterojunction thin film solar cells

    Science.gov (United States)

    Ahmad, Zubair; Touati, Farid; Shakoor, R. A.; Al-Thani, N. J.

    2016-08-01

    In this research, we report a bulk heterojunction (BHJ) solar cell consisting of a ternary blend system. Poly(3-hexylthiophene) P3HT is used as a donor and [6,6]-phenyl C61-butyric acid methylester (PCBM) plays the role of acceptor whereas vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine (VOPcPhO) is selected as an ambipolar transport material. The materials are selected and assembled in such a fashion that the generated charge carriers could efficiently be transported rightwards within the blend. The organic BHJ solar cells consist of ITO/PEDOT:PSS/ternary BHJ blend/Al structure. The power conversion efficiencies of the ITO/ PEDOT:PSS/P3HT:PCBM/Al and ITO/PEDOT:PSS/ P3HT:PCBM:VOPcPhO/Al solar cells are found to be 2.3% and 3.4%, respectively. This publication was made possible by PDRA (Grant No. PDRA1-0117-14109) from the Qatar National Research Fund (a member of Qatar Foundation). The findings achieved herein are solely the responsibility of the authors.

  11. Ternary solution-processed organic solar cells incorporating 2D materials

    Science.gov (United States)

    Stylianakis, Minas M.; Konios, Dimitrios; Petridis, Constantinos; Kakavelakis, George; Stratakis, Emmanuel; Kymakis, Emmanuel

    2017-12-01

    Recently, the study of ternary organic solar cells (OSCs) has attracted the efforts of the scientific community, leading to significantly higher performance due to the enhanced harvesting of incoming irradiation. Here, for the first time, and in order to promote this OSC architecture, we review the progress implemented by the application of two-dimensional (2D) materials in the field of blend bulk heterojunction ternary OSCs. Power conversion efficiency (PCE) improvements of the order of 40% compared to the reference binary devices, and PCEs in excess of 8% have been reported by incorporating graphene-based or other 2D materials as a third element inside the active layer. These OSCs combine the synergetic advantages of ternary devices and the superb properties of the 2D material family. In conclusion, the incorporation of the unique properties of graphene and other 2D materials inside the active layer opens up a very promising pathway in the design and construction of high-performance, simply fabricated and low- cost photovoltaic devices.

  12. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    ternary GaAsxP1-x and In0.5Ga0.5P alloys, with composition set by the ratio of GaAs/GaP or InP/GaP mixed as the source powder. GaAs0.3P0.7 has the appropriate bandgap to serve as a top cell on Si and In0.5Ga0.5P is near the composition used as a surface passivation layer on GaAs pn junction photovoltaics. In the final task we demonstrated III-V selective area epitaxy using CSVT as a first step toward the growth of III-V micro- or nanostructures for an integrated tandem solar cell on Si. We also found that direct epitaxial growth on Si appears to be impossible in the current H2O-CSVT reactor design, likely due to the formation of SiOx. This work sets the stage for targeted development of an improved CSVT process and for the scale up of the proof-of-concept work from a research to manufacturing-relevant platform. Replacing H2O as a transport agent with HCl would provide the ability to deposit directly on Si by avoiding oxide formation and to allow for the deposition of Al-containing alloys that would otherwise oxidize. Improved engineering design and implementation of an in-line multi-station CSVT would allow for direct deposition of device structures in a single system.

  13. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  14. Insight Into the Role of PC71BM on Enhancing the Photovoltaic Performance of Ternary Organic Solar Cells.

    Science.gov (United States)

    Wang, Bei; Fu, Yingying; Yan, Chi; Zhang, Rui; Yang, Qingqing; Han, Yanchun; Xie, Zhiyuan

    2018-01-01

    The development of non-fullerene acceptor molecules have remarkably boosted power conversion efficiency (PCE) of polymer solar cells (PSCs) due to the improved spectral coverage and reduced energy loss. An introduction of fullerene molecules into the non-fullerene acceptor-based blend may further improve the photovoltaic performance of the resultant ternary PSCs. However, the underlying mechanism is still debatable. Herein, the ternary PSCs based on PBDB-T:ITIC:PC 71 BM blend were fabricated and its PCE was increased to 10.2% compared to 9.2% for the binary PBDB-T:ITIC devices and 8.1% for the PBDB-T:PC 71 BM PSCs. Systematic investigation was carried out to disclose the effect of PC 71 BM on the blend morphology and charge transport behavior. It is found that the PC 71 BM tends to intermix with the PBDB-T donor compared to the ITIC counterpart. A small amount of PC 71 BM in the ternary blend is helpful for ITIC to aggregate and form efficient electron-transport pathways. Accordingly, the electron mobility is increased and the density of electron traps is decreased in the ternary blend in comparison with the PBDB-T:ITIC blend. Finally, the suppressed bimolecular recombination and enhanced charge collection lead to high PCE for the ternary solar cells.

  15. Regulating Molecular Aggregations of Polymers via Ternary Copolymerization Strategy for Efficient Solar Cells.

    Science.gov (United States)

    Wang, Qian; Wang, Yingying; Zheng, Wei; Shahid, Bilal; Qiu, Meng; Wang, Di; Zhu, Dangqiang; Yang, Renqiang

    2017-09-20

    For many high-performance photovoltaic materials in polymer solar cells (PSCs), the active layers usually need to be spin-coated at high temperature due to the strong intermolecular aggregation of donor polymers, which is unfavorable in device repeatability and large-scale PSC printing. In this work, we adopted a ternary copolymerization strategy to regulate polymer solubility and molecular aggregation. A series of D-A 1 -D-A 2 random polymers based on different acceptors, strong electron-withdrawing unit ester substituted thieno[3,4-b]thiophene (TT-E), and highly planar dithiazole linked TT-E (DTzTT) were constructed to realize the regulation of molecular aggregation and simplification of device fabrication. The results showed that as the relative proportion of TT-E segment in the backbone increased, the absorption evidently red-shifted with a gradually decreased aggregation in solution, eventually leading to the active layers that can be fabricated at low temperature. Furthermore, due to the excellent phase separation and low recombination, the optimized solar cells based on the terpolymer P1 containing 30% of TT-E segment exhibit high power conversion efficiency (PCE) of 9.09% with a significantly enhanced fill factor up to 72.86%. Encouragingly, the photovoltaic performance is insensitive to the fabrication temperature of the active layer, and it still could maintain high PCE of 8.82%, even at room temperature. This work not only develops the highly efficient photovoltaic materials for low temperature processed PSCs through ternary copolymerization strategy but also preliminarily constructs the relationship between aggregation and photovoltaic performance.

  16. Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenyong [Univ. of Wyoming, Laramie, WY (United States); Tang, Jinke [Univ. of Wyoming, Laramie, WY (United States); Dahnovsky, Yuri [Univ. of Wyoming, Laramie, WY (United States); Pikal, Jon M [Univ. of Wyoming, Laramie, WY (United States); Chien, TeYu [Univ. of Wyoming, Laramie, WY (United States)

    2017-11-03

    In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation

  17. Efficient Approach for Improving the Performance of Nonhalogenated Green Solvent-Processed Polymer Solar Cells via Ternary-Blend Strategy.

    Science.gov (United States)

    Kranthiraja, Kakaraparthi; Aryal, Um Kanta; Sree, Vijaya Gopalan; Gunasekar, Kumarasamy; Lee, Changyeon; Kim, Minseok; Kim, Bumjoon J; Song, Myungkwan; Jin, Sung-Ho

    2018-04-10

    The ternary-blend approach has the potential to enhance the power conversion efficiencies (PCEs) of polymer solar cells (PSCs) by providing complementary absorption and efficient charge generation. Unfortunately, most PSCs are processed with toxic halogenated solvents, which are harmful to human health and the environment. Herein, we report the addition of a nonfullerene electron acceptor 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3- d:2',3'- d']- s-indaceno[1,2- b:5,6- b']dithiophene (ITIC) to a binary blend (poly[4,8-bis(2-(4-(2-ethylhexyloxy)3-fluorophenyl)-5-thienyl)benzo[1,2- b:4,5- b']dithiophene- alt-1,3-bis(4-octylthien-2-yl)-5-(2-ethylhexyl)thieno[3,4- c]pyrrole-4,6-dione] (P1):[6,6]-phenyl-C 71 -butyric acid methyl ester (PC 71 BM), PCE = 8.07%) to produce an efficient nonhalogenated green solvent-processed ternary PSC system with a high PCE of 10.11%. The estimated wetting coefficient value (0.086) for the ternary blend suggests that ITIC could be located at the P1:PC 71 BM interface, resulting in efficient charge generation and charge transport. In addition, the improved current density, sustained open-circuit voltage and PCE of the optimized ternary PSCs were highly correlated with their better external quantum efficiency response and flat-band potential value obtained from the Mott-Schottky analysis. In addition, the ternary PSCs also showed excellent ambient stability over 720 h. Therefore, our results demonstrate the combination of fullerene and nonfullerene acceptors in ternary blend as an efficient approach to improve the performance of eco-friendly solvent-processed PSCs with long-term stability.

  18. III-V/Si wafer bonding using transparent, conductive oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C., E-mail: Adele.Tamboli@nrel.gov; Hest, Maikel F. A. M. van; Steiner, Myles A.; Essig, Stephanie; Norman, Andrew G.; Bosco, Nick; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, 15013 Denver West Pkwy, Golden, Colorado 80401 (United States); Perl, Emmett E. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States)

    2015-06-29

    We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100 °C to 350 °C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 Ω cm{sup 2} for samples bonded at 200 °C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga{sub 0.5}In{sub 0.5}P/Si tandem solar cells operating at 1 sun or low concentration conditions.

  19. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  20. Thermal oxidation of III-V compounds

    International Nuclear Information System (INIS)

    Monteiro, O.R.; Evans, J.W.

    1988-01-01

    The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

  1. Progress in III-V materials technology

    Science.gov (United States)

    Grant, Ian R.

    2004-12-01

    Compound semiconductors, in the form of GaAs and InP have achieved major commercial significance in areas of application such as mobile communications, displays and telecoms and offer a versatility of function beyond the capabilities of Si. III-V compounds, and in particular GaAs, have since their early development been the subject of defence related interest. Support from this sector established the basic materials technologies and nurtured development up until their commercial breakthrough into consumer products. GaAs, for example, now provides essential components for mobile phones and CD / DVD players. An overview is presented of the crystal growth and processing methods used in the manufacture of these materials. Current state of the art characteristics on crystal form and quality are discussed, together with the evolution of single crystal growth techniques. Consideration is given to how these principal compounds together with the minor materials, InSb, GaSb and InAs are employed in diverse applications over a broad spectral range, together with information on markets and future perspectives.

  2. Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE

    Science.gov (United States)

    Nattermann, L.; Ludewig, P.; Sterzer, E.; Volz, K.

    2017-07-01

    Bi containing III/V semiconductors are frequently mentioned for their importance as part of the next generation of optoelectronic devices. Bi containing ternary and quaternary materials like Ga(AsBi), Ga(NAsBi) or Ga(PAsBi) are promising candidates to meet the requirements for new laser structures for telecommunications and solar cell applications. However, in previous studies it was determined that the incorporation of sufficient amounts of Bi still poses a challenge, especially when using MOVPE (metalorganic vapour phase epitaxy) as the growth technique. In order to figure out which mechanisms are responsible for the limitation of Bi incorporation, this work deals with the question of whether there is a relationship between strain, induced by the large Bi atoms, and the saturation level of Bi incorporation in Ga(AsBi). Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.

  3. Simultaneous improvement in short circuit current, open circuit voltage, and fill factor of polymer solar cells through ternary strategy.

    Science.gov (United States)

    An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Wang, Jian; Sun, Qianqian; Zhang, Jian; Tang, Weihua; Deng, Zhenbo

    2015-02-18

    We present a smart strategy to simultaneously increase the short circuit current (Jsc), the open circuit voltage (Voc), and the fill factor (FF) of polymer solar cells (PSCs). A two-dimensional conjugated small molecule photovoltaic material (SMPV1), as the second electron donor, was doped into the blend system of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl (PC71BM) to form ternary PSCs. The ternary PSCs with 5 wt % SMPV1 doping ratio in donors achieve 4.06% champion power conversion efficiency (PCE), corresponding to about 21.2% enhancement compared with the 3.35% PCE of P3HT:PC71BM-based PSCs. The underlying mechanism on performance improvement of ternary PSCs can be summarized as (i) harvesting more photons in the longer wavelength region to increase Jsc; (ii) obtaining the lower mixed highest occupied molecular orbital (HOMO) energy level by incorporating SMPV1 to increase Voc; (iii) forming the better charge carrier transport channels through the cascade energy level structure and optimizing phase separation of donor/acceptor materials to increase Jsc and FF.

  4. Position-controlled epitaxial III-V nanowires on silicon

    NARCIS (Netherlands)

    Roest, A.L.; Verheijen, M.A.; Wunnicke, O.; Serafin, S.N.; Wondergem, H.J.; Bakkers, E.P.A.M.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction

  5. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    Science.gov (United States)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  6. Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

    Science.gov (United States)

    Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

    2016-11-02

    Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

  7. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  8. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  9. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  10. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  11. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    Science.gov (United States)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  12. An Open-Circuit Voltage and Power Conversion Efficiency Study of Fullerene Ternary Organic Solar Cells Based on Oligomer/Oligomer and Oligomer/Polymer.

    Science.gov (United States)

    Zhang, Guichuan; Zhou, Cheng; Sun, Chen; Jia, Xiaoe; Xu, Baomin; Ying, Lei; Huang, Fei; Cao, Yong

    2017-07-01

    Variations in the open-circuit voltage (V oc ) of ternary organic solar cells are systematically investigated. The initial study of these devices consists of two electron-donating oligomers, S2 (two units) and S7 (seven units), and the electron-accepting [6,6]-phenyl C71 butyric acid methyl ester (PC 71 BM) and reveals that the V oc is continuously tunable due to the changing energy of the charge transfer state (E ct ) of the active layers. Further investigation suggests that V oc is also continuously tunable upon change in E ct in a ternary blend system that consists of S2 and its corresponding polymer (P11):PC 71 BM. It is interesting to note that higher power conversion efficiencies can be obtained for both S2:S7:PC 71 BM and S2:P11:PC 71 BM ternary systems compared with their binary systems, which can be ascribed to an improved V oc due to the higher E ct and an improved fill factor due to the improved film morphology upon the incorporation of S2. These findings provide a new guideline for the future design of conjugated polymers for achieving higher performance of ternary organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. 9.0% power conversion efficiency from ternary all-polymer solar cells

    NARCIS (Netherlands)

    Li, Z.; Xu, X.; Zhang, W.; Meng, X.; Genene, Z.; Ma, W.; Mammo, W.; Yartsev, A.; Andersson, M.; Janssen, R.A.J.; Wang, E.

    2017-01-01

    Integration of a third component into a single-junction polymer solar cell (PSC) is regarded as an attractive strategy to enhance the performance of PSCs. Although binary all-polymer solar cells (all-PSCs) have recently emerged with compelling power conversion efficiencies (PCEs), the PCEs of

  14. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  15. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  16. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  17. Ternary Organic Solar Cells with Coumarin7 as the Donor Exhibiting Greater Than 10% Power Conversion Efficiency and a High Fill Factor of 75.

    Science.gov (United States)

    Chen, Xin-Wei; Tao, Si-Lu; Fan, Cong; Chen, Dong-Cheng; Zhou, Ling; Lin, Hui; Zheng, Cai-Jun; Su, Shi-Jian

    2017-09-06

    Ternary bulk heterojunction (BHJ) is a brilliant photovoltaic technology for improving the performance of organic solar cells (OSCs), because the light absorption range can be significantly extended by using multiple donors or acceptor materials. In this paper, coumarin7 (C7), a small organic molecule typical led used in organic light-emitting diodes, was initially exploited as second electron-donor component in ternary bulk heterojunction OSCs along with conventional blend system spolythieno[3,4-b]-thiophene/benzodithiophene(PTB7) and [6,6]-phenyl-C71 -butyric acid methyl(PC 71 BM). A champion PCE value of 10.28% was realized in the ternary OSCs when incorporated with 10 wt % C7 doping ratio in the donors, corresponding to about 35% enhancement compared with the PTB7:PC 71 BM-based OSCs, a high fill factor (FF) of 75.03%, a short-circuit currentdensity (J sc ) of 18.72 mA cm -2 and an open-circuit voltage (V oc ) of 0.73 V. The enhanced performance of the ternary OSCs can be attributed to the simultaneous improvement of the FF and the J sc . In addition to extended light absorption, a perfect nanofiber filament active layer morphology is obtained due to the good compatibility between C7 and PTB7, which facilitates the balance of charge transportation and the suppression of charge recombination. This investigation suggests that coumarin derivatives, which have completely different structure with polymer donors, can also be used to fabricate ternary solar cells and have the potential applications to obtain amazing performance after further device engineering and optimization.

  18. Epitaxial III-V nanowires on silicon for vertical devices

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Borgström, M.T.; Einden, Van Den W.; Weert, van M.H.M.; Helman, A.; Verheijen, M.A.

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the Vapor-Liquid-Solid (VLS) mechanism with laser ablation as well as metal organic vapor phase epitaxy. The VLS growth enables the fabrication of complex axial and radial

  19. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.; Tahini, Hassan Ali; Schwingenschlö gl, Udo; Grimes, R. W.

    2014-01-01

    as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I

  20. Long-wavelength III-V/silicon photonic integrated circuits

    NARCIS (Netherlands)

    Roelkens, G.C.; Kuyken, B.; Leo, F.; Hattasan, N.; Ryckeboer, E.M.P.; Muneeb, M.; Hu, C.L.; Malik, A.; Hens, Z.; Baets, R.G.F.; Shimura, Y.; Gencarelli, F.; Vincent, B.; Loo, van de R.; Verheyen, P.A.; Lepage, G.; Campenhout, van J.; Cerutti, L.; Rodriquez, J.B.; Tournie, E.; Chen, X; Nedeljkovic, G.; Mashanovich, G.; Liu, X.; Green, W.S.

    2013-01-01

    We review our work in the field of short-wave infrared and mid-infrared photonic integrated circuits for applications in spectroscopic sensing systems. Passive silicon waveguide circuits, GeSn photodetectors, the integration of III-V and IV-VI semiconductors on these circuits, and silicon nonlinear

  1. Fullerene alloy formation and the benefits for efficient printing of ternary blend organic solar cells

    DEFF Research Database (Denmark)

    Angmo, Dechan; Bjerring, Morten; Nielsen, Niels Chr.

    2015-01-01

    behaving as pseudo-binary mixtures due to alloying of the fullerene components. This finding has vast implications for the understanding of polymer–fullerene mixtures and quite certainly also their application in organic solar cells where performance hinges critically on the blend behaviour which is also...

  2. Cleavage mechanoluminescence in elemental and III-V semiconductors

    International Nuclear Information System (INIS)

    Chandra, B.P.; Patel, R.P.; Gour, Anubha S.; Chandra, V.K.; Gupta, R.K.

    2003-01-01

    The present paper reports the theory of mechanoluminescence (ML) produced during cleavage of elemental and III-V semiconductors. It seems that the formation of crack-induced localized states is responsible for the ML excitation produced during the cleavage of elemental and III-V semiconductors. According to this mechanism, as the atoms are drawn away from each other in an advancing crack tip, the decreasing wave function overlap across the crack may result in localized states which is associated with increasing electron energy. If the energy of these localized states approach that of the conduction band, transition to the conduction band via tunnelling would be possible, creating minority carriers, and consequently the electron-hole recombination may give rise to mechanoluminescence. When an elemental or III-V semiconductor is cleaved, initially the ML intensity increases with time, attains a peak value I m at the time t m corresponding to completion of the cleavage of the semiconductor, and then it decreases following power law decay. Expressions are derived for the ML intensity I m corresponding to the peak of the ML intensity versus time curve and for the total ML intensity I T . It is shown that both I m and I T should increase directly with the area of the newly created surfaces of the crystals. From the measurements of the ML intensity, the velocity of crack propagation in material can be determined by using the relation v=H/t m

  3. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  4. Ternary superconductors

    International Nuclear Information System (INIS)

    Giorgi, A.L.

    1987-01-01

    Ternary superconductors constitute a class of superconducting compounds with exceptional properties such as high transition temperatures (≅ 15.2 K), extremely high critical fields (H c2 >60 Tesla), and the coexistence of superconductivity and long-range magnetic order. This has generated great interest in the scientific community and resulted in a large number of experimental and theoretical investigations in which many new ternary compounds have been discovered. A review of some of the properties of these ternary compounds is presented with particular emphasis on the ternary molybdenum chalcogenides and the ternary rare earth transition metal tetraborides. The effect of partial substitution of a second metal atom to form pseudoternary compounds is examined as well as some of the proposed correlations between the superconducting transition temperature and the structural and electronic properties of the ternary superconductors

  5. Ternary fission

    Indian Academy of Sciences (India)

    the energy minimization of all possible ternary breakups of a heavy radioactive nucleus. Further, within the TCM we have analysed the competition between different geometries as well as different positioning of the fragments. Also, an attempt was made to calculate the mass distribution of ternary fission process within the ...

  6. Photocatalytic activity of attapulgite-TiO2-Ag3PO4 ternary nanocomposite for degradation of Rhodamine B under simulated solar irradiation

    Science.gov (United States)

    He, Hongcai; Jiang, Zhuolin; He, Zhaoling; Liu, Tao; Li, Enzhu; Li, Bao-Wen

    2018-01-01

    An excellent ternary composite photocatalyst consisting of silver orthophosphate (Ag3PO4), attapulgite (ATP), and TiO2 was synthesized, in which heterojunction was formed between dissimilar semiconductors to promote the separation of photo-generated charges. The ATP/TiO2/Ag3PO4 composite was characterized by SEM, XRD, and UV-vis diffuse reflectance spectroscopy. The co-deposition of Ag3PO4 and TiO2 nanoparticles onto the surface of ATP forms a lath-particle structure. Compared with composite photocatalysts consisting of two phases, ATP/TiO2/Ag3PO4 ternary composite exhibits greatly improved photocatalytic activity for degradation of rhodamine B under simulated solar irradiation. Such ternary composite not only improves the stability of Ag3PO4, but also lowers the cost by reducing application amount of Ag3PO4, which provides guidance for the design of Ag3PO4- and Ag-based composites for photocatalytic applications.

  7. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms ...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  8. Radiation Effects in III-V Nanowire Devices

    Science.gov (United States)

    2016-09-01

    fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field- effect transistor (MOSFET) by focused -ion beam (FIB) etching and chemical...8725 John J. Kingman Road, MS 6201 Fort Belvoir, VA 22060-6201 T E C H N IC A L R E P O R T DTRA-TR-16-94 Radiation Effects in III-V...5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING / MONITORING AGENCY

  9. Ternary Nonfullerene Polymer Solar Cells with 12.16% Efficiency by Introducing One Acceptor with Cascading Energy Level and Complementary Absorption.

    Science.gov (United States)

    Jiang, Weigang; Yu, Runnan; Liu, Zhiyang; Peng, Ruixiang; Mi, Dongbo; Hong, Ling; Wei, Qiang; Hou, Jianhui; Kuang, Yongbo; Ge, Ziyi

    2018-01-01

    A novel small-molecule acceptor, (2,2'-((5E,5'E)-5,5'-((5,5'-(4,4,9,9-tetrakis(5-hexylthiophen-2-yl)-4,9-dihydro-s-indaceno[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(4-(2-ethylhexyl)thiophene-5,2-diyl))bis(methanylylidene)) bis(3-hexyl-4-oxothiazolidine-5,2-diylidene))dimalononitrile (ITCN), end-capped with electron-deficient 2-(3-hexyl-4-oxothiazolidin-2-ylidene)malononitrile groups, is designed, synthesized, and used as the third component in fullerene-free ternary polymer solar cells (PSCs). The cascaded energy-level structure enabled by the newly designed acceptor is beneficial to the carrier transport and separation. Meanwhile, the three materials show a complementary absorption in the visible region, resulting in efficient light harvesting. Hence, the PBDB-T:ITCN:IT-M ternary PSCs possess a high short-circuit current density (J sc ) under an optimal weight ratio of donors and acceptors. Moreover, the open-circuit voltage (V oc ) of the ternary PSCs is enhanced with an increase of the third acceptor ITCN content, which is attributed to the higher lowest unoccupied molecular orbital energy level of ITCN than that of IT-M, thus exhibits a higher V oc in PBDB-T:ITCN binary system. Ultimately, the ternary PSCs achieve a power conversion efficiency of 12.16%, which is higher than the PBDB-T:ITM-based PSCs (10.89%) and PBDB-T:ITCN-based ones (2.21%). This work provides an effective strategy to improve the photovoltaic performance of PSCs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. DX centers in III-V semiconductors under hydrostatic pressure

    International Nuclear Information System (INIS)

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

  11. III-V nanoelectronics and related surface/interface issues

    International Nuclear Information System (INIS)

    Hasegawa, Hideki

    2003-01-01

    The conventional logic gate architecture is not suitable for high-density integration of quantum devices which are non-robust and extremely structure- and charge-sensitive. In this paper, our novel hexagonal binary-decision-diagram (BDD) quantum circuit approach for III-V nanoelectronics is reviewed and related critical surface/interface issues for high-density integration are discussed. First, the basic concept and actual implementation method of our approach are explained, giving examples of novel BDD quantum integrated circuits where nanowire networks are controlled by nanoscale Schottky wrap gates. For high-density integration, growth of embedded sub-10 nm III-V quantum wire networks by selective molecular beam epitaxy (MBE) on patterned substrates is described, including effects of atomic hydrogen irradiation and kinetic control of wire width. The key processing issue lies in understanding and control of nanostructure surfaces/interfaces. Behavior of nanoscale Schottky gates, recent scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) studies of surface states, and successful removal of surface states by MBE-grown silicon interface control layer are discussed

  12. Hybrid III-V-on-Si Vertical Cavity laser for Optical Interconnects

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Semenova, Elizaveta; Chung, Il-Sug

    2013-01-01

    Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers.......Combining a III-V active material onto the Si platform is an attractive approach for silicon photonics light source. We have developed fabrication methods for novel III-V on Si vertical cavity lasers....

  13. Fast optical in situ spectroscopy in III-V MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kaspari, C.

    2007-09-29

    This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

  14. New III-V cell design approaches for very high efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; Patkar, M.P.; Young, M.P. (Purdue Univ., Lafayette, IN (United States))

    1993-04-01

    This report describes to examine new solar cell desip approaches for achieving very high conversion efficiencies. The program consists of two elements. The first centers on exploring new thin-film approaches specifically designed for M-III semiconductors. Substantial efficiency gains may be possible by employing light trapping techniques to confine the incident photons, as well as the photons emitted by radiative recombination. The thin-film approach is a promising route for achieving substantial performance improvements in the already high-efficiency, single-junction, III-V cell. The second element of the research involves exploring desip approaches for achieving high conversion efficiencies without requiring extremely high-quality material. This work has applications to multiple-junction cells, for which the selection of a component cell often involves a compromise between optimum band pp and optimum material quality. It could also be a benefit manufacturing environment by making the cell's efficiency less dependent on materialquality.

  15. Ternary fission

    International Nuclear Information System (INIS)

    Wagemans, C.

    1991-01-01

    Since its discovery in 1946, light (charged) particle accompanied fission (ternary fission) has been extensively studied, for spontaneous as well as for induced fission reactions. The reason for this interest was twofold: the ternary particles being emitted in space and time close to the scission point were expected to supply information on the scission point configuration and the ternary fission process was an important source of helium, tritium, and hydrogen production in nuclear reactors, for which data were requested by the nuclear industry. Significant experimental progress has been realized with the advent of high-resolution detectors, powerful multiparameter data acquisition systems, and intense neutron and photon beams. As far as theory is concerned, the trajectory calculations (in which scission point parameters are deduced from the experimental observations) have been very much improved. An attempt was made to explain ternary particle emission in terms of a Plateau-Rayleigh hydrodynamical instability of a relatively long cylindrical neck or cylindrical nucleus. New results have also been obtained on the so-called open-quotes trueclose quotes ternary fission (fission in three about-equal fragments). The spontaneous emission of charged particles has also clearly been demonstrated in recent years. This chapter discusses the main characteristics of ternary fission, theoretical models, light particle emission probabilities, the dependence of the emission probabilities on experimental variables, light particle energy distributions, light particle angular distributions, correlations between light particle accompanied fission observables, open-quotes trueclose quotes ternary fission, and spontaneous emission of heavy ions. 143 refs., 18 figs., 8 tabs

  16. Spectroscopic characterization of III-V semiconductor nanomaterials

    Science.gov (United States)

    Crankshaw, Shanna Marie

    III-V semiconductor materials form a broad basis for optoelectronic applications, including the broad basis of the telecom industry as well as smaller markets for high-mobility transistors. In a somewhat analogous manner as the traditional silicon logic industry has so heavily depended upon process manufacturing development, optoelectronics often relies instead on materials innovations. This thesis focuses particularly on III-V semiconductor nanomaterials, detailed characterization of which is invaluable for translating the exhibited behavior into useful applications. Specifically, the original research described in these thesis chapters is an investigation of semiconductors at a fundamental materials level, because the nanostructures in which they appear crystallize in quite atypical forms for the given semiconductors. Rather than restricting the experimental approaches to any one particular technique, many different types of optical spectroscopies are developed and applied where relevant to elucidate the connection between the crystalline structure and exhibited properties. In the first chapters, for example, a wurtzite crystalline form of the prototypical zincblende III-V binary semiconductor, GaAs, is explored through polarization-dependent Raman spectroscopy and temperature-dependent photoluminescence, as well as second-harmonic generation (SHG). The altered symmetry properties of the wurtzite crystalline structure are particularly evident in the Raman and SHG polarization dependences, all within a bulk material realm. A rather different but deeply elegant aspect of crystalline symmetry in GaAs is explored in a separate study on zincblende GaAs samples quantum-confined in one direction, i.e. quantum well structures, whose quantization direction corresponds to the (110) direction. The (110) orientation modifies the low-temperature electron spin relaxation mechanisms available compared to the usual (001) samples, leading to altered spin coherence times explored

  17. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  18. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S M

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed by a

  19. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  20. Ternary systems

    International Nuclear Information System (INIS)

    Kagan, D.N.; Hubberstey, P.; Barker, M.G.

    1985-01-01

    The paper reviews the experimental and theoretical studies carried out on multicomponent alkali metal systems. Solid-liquid phase equilibria studies are mainly concerned with the systems Na-K-Rb and Na-K-Cs, and data on the liquidus temperatures in these systems are presented. The thermodynamic properties of the ternary Na-K-Cs eutectic system have been determined experimentally, and the enthalpy, heat capacity and excess functions of the alloy are given. An analysis of calculational methods used in determining thermodynamic functions of ternary liquid metals systems is described. Finally, data are tabulated for the density, compressibility, saturated vapour pressure, viscosity and thermal conductivity of the ternary Na-K-Cs eutectic system. (UK)

  1. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  2. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  3. Heterogeneous Silicon III-V Mode-Locked Lasers

    Science.gov (United States)

    Davenport, Michael Loehrlein

    Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

  4. Mixing of III-V compound semiconductor superlattices

    International Nuclear Information System (INIS)

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

  5. Reducing the efficiency–stability–cost gap of organic photovoltaics with highly efficient and stable small molecule acceptor ternary solar cells

    KAUST Repository

    Baran, Derya

    2016-11-21

    Technological deployment of organic photovoltaic modules requires improvements in device light-conversion efficiency and stability while keeping material costs low. Here we demonstrate highly efficient and stable solar cells using a ternary approach, wherein two non-fullerene acceptors are combined with both a scalable and affordable donor polymer, poly(3-hexylthiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction device. The addition of a strongly absorbing small molecule acceptor into a P3HT-based non-fullerene blend increases the device efficiency up to 7.7 ± 0.1% without any solvent additives. The improvement is assigned to changes in microstructure that reduce charge recombination and increase the photovoltage, and to improved light harvesting across the visible region. The stability of P3HT-based devices in ambient conditions is also significantly improved relative to polymer:fullerene devices. Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10), the two mixed acceptors also lead to solar cells with 11.0 ± 0.4% efficiency and a high open-circuit voltage of 1.03 ± 0.01 V.

  6. Reducing the efficiency–stability–cost gap of organic photovoltaics with highly efficient and stable small molecule acceptor ternary solar cells

    KAUST Repository

    Baran, Derya; Ashraf, Raja; Hanifi, David A.; Abdelsamie, Maged; Gasparini, Nicola; Rö hr, Jason A.; Holliday, Sarah; Wadsworth, Andrew; Lockett, Sarah; Neophytou, Marios; Emmott, Christopher J. M.; Nelson, Jenny; Brabec, Christoph J.; Amassian, Aram; Salleo, Alberto; Kirchartz, Thomas; Durrant, James R.; McCulloch, Iain

    2016-01-01

    Technological deployment of organic photovoltaic modules requires improvements in device light-conversion efficiency and stability while keeping material costs low. Here we demonstrate highly efficient and stable solar cells using a ternary approach, wherein two non-fullerene acceptors are combined with both a scalable and affordable donor polymer, poly(3-hexylthiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction device. The addition of a strongly absorbing small molecule acceptor into a P3HT-based non-fullerene blend increases the device efficiency up to 7.7 ± 0.1% without any solvent additives. The improvement is assigned to changes in microstructure that reduce charge recombination and increase the photovoltage, and to improved light harvesting across the visible region. The stability of P3HT-based devices in ambient conditions is also significantly improved relative to polymer:fullerene devices. Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10), the two mixed acceptors also lead to solar cells with 11.0 ± 0.4% efficiency and a high open-circuit voltage of 1.03 ± 0.01 V.

  7. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.

    2015-09-22

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  8. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.; Vandewal, Koen; Salleo, Alberto

    2015-01-01

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  9. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  10. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  11. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    copyright information. 13. SUPPLEMENTARY NOTES. Enter information not included elsewhere such as: prepared in cooperation with; translation of; report...II-VI heterojunctions such as multi-color photodetectors and solar cells [2]. Mixing lattice-matched II-VI and III-V semiconductors could be an...at 77 K, further silicon oxide surface passivation can be done to suppress the surface leakage [10] in the future work. Figure 10 The dark I-V

  12. Quantitative STEM on indium containing group III-V semiconductor nanostructures

    International Nuclear Information System (INIS)

    Mehrtens, Thorsten

    2013-01-01

    In the framework of this thesis. a method for compositional analysis of semiconductor nanostructures is applied on technologically relevant group III-V alloys. It is based on a quantitative comparison between intensities of experimentally acquired High-Angle Annular Dark Field Scanning Tansmission Electron Microscopy (HAADF-STEM) images and simulated intensities from multislice calculations in the frozen lattice approach. The demonstrated method allows determination of specimen thickness and material composition on subnanometer scale. Since quantitative HAADF-STEM is still a very young technique, its applicability has only been proven for a few materials, yet. Thus, the main goal of this thesis is the simulation of suitable reference datasets for different ternary semiconducting alloys and to test their reliability by complementary analysis. A total of three different semiconducting materials are thereby analyzed (InGaN, InGaAs and InAlN) that have all in common that they contain indium. The main focus of this work lies on InGaN which is due to its bandgap particularly suitable for the fabrication of optoelectronic devices operating in the visible spectrum of the light. In the first part of the presented results, the quality of ultra-thin TEM-specimens prepared by techniques involving ion milling at high energies is optimized. This is done by an additional ion milling step where the impinging ions possess an energy of only 400 eV. It is found that the preparation induced amorphous surface layer that occurs during ion milling can be drastically reduced below 1 nm. The second part concentrates on results obtained on InGaN. Here, different simulations in the frozen lattice approach are carried out under certain conditions. These simulations either include or do not include thermal diffuse scattering and/or static atomic displacement to demonstrate their influence on the amount of intensity measured in the experiment. As the consideration of thermal diffuse scattering

  13. The coupling of thermochemistry and phase diagrams for group III-V semiconductor systems. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.J.

    1998-07-21

    The project was directed at linking the thermochemical properties of III-V compound semiconductors systems with the reported phase diagrams. The solid-liquid phase equilibrium problem was formulated and three approaches to calculating the reduced standard state chemical potential were identified and values were calculated. In addition, thermochemical values for critical properties were measured using solid state electrochemical techniques. These values, along with the standard state chemical potentials and other available thermochemical and phase diagram data, were combined with a critical assessment of selected III-V systems. This work was culminated with a comprehensive assessment of all the III-V binary systems. A novel aspect of the experimental part of this project was the demonstration of the use of a liquid encapsulate to measure component activities by a solid state emf technique in liquid III-V systems that exhibit high vapor pressures at the measurement temperature.

  14. Interpreting Interfacial Structure in Cross-Sectional STM Images of III-V Semiconductor Heterostructures

    National Research Council Canada - National Science Library

    Nosho, B. Z; Barvosa-Carter, W; Yang, M. J; Bennett, B. R; Whitman, L. J

    2000-01-01

    ...) can be used for the study of III-V heterostructure interfaces. The interpretation of interfacial structure in XSTM images is impeded by the fact that only every other III or V plane as grown on the (001...

  15. Structure of metal-rich (001) surfaces of III-V compound semiconductors

    DEFF Research Database (Denmark)

    Kumpf, C.; Smilgies, D.; Landemark, E.

    2001-01-01

    The atomic structure of the group-III-rich surface of III-V semiconductor compounds has been under intense debate for many years, yet none of the models agrees with the experimental data available. Here we present a model for the three-dimensional structure of the (001)-c(8x2) reconstruction on In......(8 x 2) reconstructions of III-V semiconductor surfaces contain the same essential building blocks....

  16. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Science.gov (United States)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  17. Preservation of water samples for arsenic(III/V) determinations: An evaluation of the literature and new analytical results

    Science.gov (United States)

    McCleskey, R. Blaine; Nordstrom, D. Kirk; Maest, A.S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2SO4, and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO4.

  18. Preservation of water samples for arsenic(III/V) determinations: an evaluation of the literature and new analytical results

    International Nuclear Information System (INIS)

    McCleskey, R.Blaine; Nordstrom, D.Kirk; Maest, Ann S.

    2004-01-01

    Published literature on preservation procedures for stabilizing aqueous inorganic As(III/V) redox species contains discrepancies. This study critically evaluates published reports on As redox preservation and explains discrepancies in the literature. Synthetic laboratory preservation experiments and time stability experiments were conducted for natural water samples from several field sites. Any field collection procedure that filters out microorganisms, adds a reagent that prevents dissolved Fe and Mn oxidation and precipitation, and isolates the sample from solar radiation will preserve the As(III/V) ratio. Reagents that prevent Fe and Mn oxidation and precipitation include HCl, H 2 SO 4 , and EDTA, although extremely high concentrations of EDTA are necessary for some water samples high in Fe. Photo-catalyzed Fe(III) reduction causes As(III) oxidation; however, storing the sample in the dark prevents photochemical reactions. Furthermore, the presence of Fe(II) or SO 4 inhibits the oxidation of As(III) by Fe(III) because of complexation reactions and competing reactions with free radicals. Consequently, fast abiotic As(III) oxidation reactions observed in the laboratory are not observed in natural water samples for one or more of the following reasons: (1) the As redox species have already stabilized, (2) most natural waters contain very low dissolved Fe(III) concentrations, (3) the As(III) oxidation caused by Fe(III) photoreduction is inhibited by Fe(II) or SO 4

  19. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

    2017-07-11

    Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

  20. Transferable tight-binding model for strained group IV and III-V materials and heterostructures

    Science.gov (United States)

    Tan, Yaohua; Povolotskyi, Michael; Kubis, Tillmann; Boykin, Timothy B.; Klimeck, Gerhard

    2016-07-01

    It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduce a transferable s p3d5s* tight-binding model with nearest-neighbor interactions for arbitrarily strained group IV and III-V materials. The tight-binding model is parametrized with respect to hybrid functional (HSE06) calculations for varieties of strained systems. The tight-binding calculations of ultrasmall superlattices formed by group IV and group III-V materials show good agreement with the corresponding HSE06 calculations. The application of the tight-binding model to superlattices demonstrates that the transferable tight-binding model with nearest-neighbor interactions can be obtained for group IV and III-V materials.

  1. Improving the performance of solution-processed organic solar cells by incorporating small molecule acceptors into a ternary bulk heterojunction based on DH6T:Mq3:PCBM (M = Ga, Al)

    International Nuclear Information System (INIS)

    Muhammad, Fahmi F.; Yahya, Mohd Yazid; Sulaiman, Khaulah

    2017-01-01

    Improvement in the overall performance of solution-processed organic solar cells based on a ternary heterostructure was realized by means of incorporating small molecules of tris(8-hydroxyquinoline) gallium (Gaq3) or Alq3 electron acceptors. The donor host polymer was α,ω-dihexyl-sexithiophene (DH6T), while the ultimate acceptor was fullerene (PC 61 BM). The results showed that short circuit current (I Sc ), open circuit voltage (V oc ), and fill factor (FF) of the devices were pronouncedly enhanced by the inclusion of Gaq3 or Alq3. The maximum output power and conversion efficiency of the ternary devices were increased by an order of 5.8 times compared to that of the control devices. These improvements were ascribed to the broadened light absorption, energy levels alignment between the donor-acceptor components, a balanced charge transfer, and increased crystallinity of the devices active layer. The results were ascertained and analyzed by means of UV–Vis, PL, XRD, IV and TEM investigations. - Highlights: • Ternary solution-processed OSCs including Gaq3 and Alq3 acceptors were realized. • The power and efficiency of the devices were increased by an order of 5.8. • Broadened absorption and improved crystallinity were achieved for the active layers.

  2. Improving the performance of solution-processed organic solar cells by incorporating small molecule acceptors into a ternary bulk heterojunction based on DH6T:Mq3:PCBM (M = Ga, Al)

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, Fahmi F. [Center for Composites, Institute for Vehicle Systems & Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Johor (Malaysia); Soft Materials & Devices Lab, Department of Physics, Faculty of Science & Health, Koya University, Koya, Kurdistan Region (Iraq); Development Center for Research and Training, University of Human Development, Sulaimani, Kurdistan Region (Iraq); Yahya, Mohd Yazid, E-mail: yazidyahya@utm.my [Center for Composites, Institute for Vehicle Systems & Engineering, Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 Johor Bahru, Johor (Malaysia); Sulaiman, Khaulah [Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2017-02-15

    Improvement in the overall performance of solution-processed organic solar cells based on a ternary heterostructure was realized by means of incorporating small molecules of tris(8-hydroxyquinoline) gallium (Gaq3) or Alq3 electron acceptors. The donor host polymer was α,ω-dihexyl-sexithiophene (DH6T), while the ultimate acceptor was fullerene (PC{sub 61}BM). The results showed that short circuit current (I{sub Sc}), open circuit voltage (V{sub oc}), and fill factor (FF) of the devices were pronouncedly enhanced by the inclusion of Gaq3 or Alq3. The maximum output power and conversion efficiency of the ternary devices were increased by an order of 5.8 times compared to that of the control devices. These improvements were ascribed to the broadened light absorption, energy levels alignment between the donor-acceptor components, a balanced charge transfer, and increased crystallinity of the devices active layer. The results were ascertained and analyzed by means of UV–Vis, PL, XRD, IV and TEM investigations. - Highlights: • Ternary solution-processed OSCs including Gaq3 and Alq3 acceptors were realized. • The power and efficiency of the devices were increased by an order of 5.8. • Broadened absorption and improved crystallinity were achieved for the active layers.

  3. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    Epitaxial growth of heterostructure nanowires allows for the definition of narrow sections with specific semiconductor composition. The authors demonstrate how postgrowth engineering of III-V heterostructure nanowires using selective etching can form gaps, sharpening of tips, and thin sections...... lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  4. Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

    International Nuclear Information System (INIS)

    Leisner, Malte; Carstensen, Juergen; Foell, Helmut

    2011-01-01

    The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

  5. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  6. Synthesis and characterization of (Ni{sub 1−x}Co{sub x})Se{sub 2} based ternary selenides as electrocatalyst for triiodide reduction in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Theerthagiri, J.; Senthil, R.A. [Solar Energy Lab, Department of Chemistry, Thiruvalluvar University, Vellore 632115 (India); Buraidah, M.H. [Centre for Ionics University of Malaya, Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia); Raghavender, M. [Department of Physics, Yogi Vemana University, Kadapa 516003, Andhra Pradesh (India); Madhavan, J., E-mail: jagan.madhavan@gmail.com [Solar Energy Lab, Department of Chemistry, Thiruvalluvar University, Vellore 632115 (India); Arof, A.K. [Centre for Ionics University of Malaya, Department of Physics, University of Malaya, Kuala Lumpur 50603 (Malaysia)

    2016-06-15

    Ternary metal selenides of (Ni{sub 1−x}Co{sub x})Se{sub 2} with 0≤x≤1 were synthesized by using one-step hydrothermal reduction route. The synthesized metal selenides were utilized as an efficient, low-cost platinum free counter electrode for dye-sensitized solar cells. The cyclic voltammetry and electrochemical impedance spectroscopy studies revealed that the Ni{sub 0.5}Co{sub 0.5}Se{sub 2} counter electrode exhibited higher electrocatalytic activity and lower charge transfer resistance at the counter electrode/electrolyte interface than the other compositions for reduction of triiodide to iodide. Ternary selenides of Ni{sub 0.5}Co{sub 0.5}Se{sub 2} offer a synergistic effect to the electrocatalytic activity for the reduction of triiodide that might be due to an increase in active catalytic sites and small charge transfer resistance. The DSSC with Ni{sub 0.5}Co{sub 0.5}Se{sub 2} counter electrode achieved a high power conversion efficiency of 6.02%, which is comparable with that of conventional platinum counter electrode (6.11%). This present investigation demonstrates the potential application of Ni{sub 0.5}Co{sub 0.5}Se{sub 2} as counter electrode in dye-sensitized solar cells.

  7. Prospects of Ternary Cd1-x Zn x S as an Electron Transport Layer and Associated Interface Defects in a Planar Lead Halide Perovskite Solar Cell via Numerical Simulation

    Science.gov (United States)

    Chowdhury, Towhid Hossain; Ferdaous, Mohammad Tanvirul; Wadi, Mohd. Aizat Abdul; Chelvanathan, Puvaneswaran; Amin, Nowshad; Islam, Ashraful; Kamaruddin, Nurhafiza; Zin, Muhammad Irsyamuddin M.; Ruslan, Mohd Hafidz; Sopian, Kamaruzzaman Bin; Akhtaruzzaman, Md.

    2018-03-01

    In this study we present a ternary alloy, Cd1-x Zn x S as an electron transport layer for a planar lead halide perovskite solar cell via numerical simulation with solar cell capacitance simulator (SCAPS) software. Performance dependence on molar composition variation in the Cd1-x Zn x S alloy was studied for the mixed perovskite CH3NH3PbI3-x Cl x absorber and spiro-OMeTAD hole transport material in a planar perovskite solar cell. Additionally, the defects on both Cd1-x Zn x S/CH3NH3PbI3-x Cl x and CH3NH3PbI3-x Cl x /spiro-OMeTAD interface were thoroughly investigated. Simultaneously, a thickness of 700 nm for CH3NH3PbI3-x Cl x absorber with 50-nm-thick Cd0.2Zn0.8S (x = 0.8) was optimized. Analysis of the numerical solutions via SCAPS provides a trend and pattern for Cd0.2Zn0.8S as an effective electron transport layer for planar perovskite solar cells with a yield efficiency up to 24.83%. The planar perovskite solar cell shows an open-circuit voltage of 1.224 V, short-circuit current density of 25.283 mA/cm2 and a fill factor of 80.22.

  8. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, and light emitting diodes. The unique properties of these...

  9. Binary and ternary systems

    International Nuclear Information System (INIS)

    Petrov, D.A.

    1986-01-01

    Conditions for thermodynamical equilibrium in binary and ternary systems are considered. Main types of binary and ternary system phase diagrams are sequently constructed on the basis of general regularities on the character of transition from one equilibria to others. New statements on equilibrium line direction in the diagram triple points and their isothermal cross sections are developed. New represenations on equilibria in case of monovariant curve minimum and maximum on three-phase equilibrium formation in ternary system are introduced

  10. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  11. Efficient n-type doping of zinc-blende III-V semiconductor nanowires

    Science.gov (United States)

    Besteiro, Lucas V.; Tortajada, Luis; Souto, J.; Gallego, L. J.; Chelikowsky, James R.; Alemany, M. M. G.

    2014-03-01

    We demonstrate that it is preferable to dope III-V semiconductor nanowires by n-type anion substitution as opposed to cation substitution. Specifically, we show the dopability of zinc-blende nanowires is more efficient when the dopants are placed at the anion site as quantified by formation energies and the stabilization of DX-like defect centers. The comparison with previous work on n - type III-V semiconductor nanocrystals also allows to determine the role of dimensionality and quantum confinement on doping characteristics of materials. Our results are based on first-principles calculations of InP nanowires by using the PARSEC code. Work supported by the Spanish MICINN (FIS2012-33126) and Xunta de Galicia (GPC2013-043) in conjunction with FEDER. JRC acknowledges support from DoE (DE-FG02-06ER46286 and DESC0008877). Computational support was provided in part by CESGA.

  12. Coherent-potential approximation for the lattice vibrations of mixed III-V crystals

    International Nuclear Information System (INIS)

    Kleinert, P.

    1984-01-01

    The coherent-potential approximation (CPA) is applied to the lattice dynamics of some III-V mixed crystals. The calculations are based on an eleven-parameter rigid-ion model (RIM 11). Explicit results are reported for the one-mode system In/sub 1-c/Ga/sub c/P and the two mixed-mode crystals In/sub 1-c/Ga/sub c/Sb and GaSb/sub 1-c/As/sub c/. Both, the reflectivity spectra and the composition dependence of vibrations at the GAMMA and X points are compared with existing experimental data. Force-constant changes are considered by the virtual-crystal approximation (VCA). The CPA theory is uniquely successful for III-V mixed-mode systems, which appear to switch from one-mode to two-mode behaviour. (author)

  13. III-V group compound semiconductor light-emitting element having a doped tantalum barrier layer

    International Nuclear Information System (INIS)

    Oanna, Y.; Ozawa, N.; Yamashita, M.; Yasuda, N.

    1984-01-01

    Disclosed is a III-V Group compound semiconductor light-emitting element having a III-V Group compound semiconductor body with a p-n junction and including a p-type layer involved in forming the p-n junction; and a multi-layer electrode mounted on the p-type layer of the semiconductor body. The electrode comprises a first layer of gold alloy containing a small amount of beryllium or zinc and formed in direct contact with the p-type layer of the semiconductor body and an uppermost layer formed of gold or aluminum. A tantalum layer doped with carbon, nitrogen and/or oxygen is formed between the first layer and the uppermost layer by means of vacuum vapor deposition

  14. David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

    Science.gov (United States)

    Riel, Heike

    Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

  15. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin; Arif, Suneela K.; Ahmad, Iftikhar; Maqbool, Muhammad; Ahmad, Roshan; Goumri-Said, Souraya; Prisbrey, Keith A.

    2011-01-01

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  16. Blocking of indium incorporation by antimony in III-V-Sb nanostructures

    International Nuclear Information System (INIS)

    Sanchez, A M; Beltran, A M; Ben, T; Molina, S I; Beanland, R; Gass, M H; De la Pena, F; Walls, M; Taboada, A G; Ripalda, J M

    2010-01-01

    The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.

  17. Low Thermal Budget Fabrication of III-V Quantum Nanostructures on Si Substrates

    International Nuclear Information System (INIS)

    Bietti, S; Somaschini, C; Sanguinetti, S; Koguchi, N; Isella, G; Chrastina, D; Fedorov, A

    2010-01-01

    We show the possibility to integrate high quality III-V quantum nanostructures tunable in shape and emission energy on Si-Ge Virtual Substrate. Strong photoemission is observed, also at room temperature, from two different kind of GaAs quantum nanostructures fabricated on Silicon substrate. Due to the low thermal budget of the procedure used for the fabrication of the active layer, Droplet Epitaxy is to be considered an excellent candidate for implementation of optoelectronic devices on CMOS circuits.

  18. Observation of electron polarization above 80% in photoemission from strained III-V compounds

    International Nuclear Information System (INIS)

    Garwin, E.L.; Maruyama, T.; Prepost, R.; Zapalac, G.H.

    1992-02-01

    Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In x Ga 1-x As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs 1-x P x buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed

  19. Transferable tight binding model for strained group IV and III-V heterostructures

    Science.gov (United States)

    Tan, Yaohua; Povolotskyi, Micheal; Kubis, Tillmann; Boykin, Timothy; Klimeck, Gerhard

    Modern semiconductor devices have reached critical device dimensions in the range of several nanometers. For reliable prediction of device performance, it is critical to have a numerical efficient model that are transferable to material interfaces. In this work, we present an empirical tight binding (ETB) model with transferable parameters for strained IV and III-V group semiconductors. The ETB model is numerically highly efficient as it make use of an orthogonal sp3d5s* basis set with nearest neighbor inter-atomic interactions. The ETB parameters are generated from HSE06 hybrid functional calculations. Band structures of strained group IV and III-V materials by ETB model are in good agreement with corresponding HSE06 calculations. Furthermore, the ETB model is applied to strained superlattices which consist of group IV and III-V elements. The ETB model turns out to be transferable to nano-scale hetero-structure. The ETB band structures agree with the corresponding HSE06 results in the whole Brillouin zone. The ETB band gaps of superlattices with common cations or common anions have discrepancies within 0.05eV.

  20. III-V quantum light source and cavity-QED on silicon.

    Science.gov (United States)

    Luxmoore, I J; Toro, R; Del Pozo-Zamudio, O; Wasley, N A; Chekhovich, E A; Sanchez, A M; Beanland, R; Fox, A M; Skolnick, M S; Liu, H Y; Tartakovskii, A I

    2013-01-01

    Non-classical light sources offer a myriad of possibilities in both fundamental science and commercial applications. Single photons are the most robust carriers of quantum information and can be exploited for linear optics quantum information processing. Scale-up requires miniaturisation of the waveguide circuit and multiple single photon sources. Silicon photonics, driven by the incentive of optical interconnects is a highly promising platform for the passive optical components, but integrated light sources are limited by silicon's indirect band-gap. III-V semiconductor quantum-dots, on the other hand, are proven quantum emitters. Here we demonstrate single-photon emission from quantum-dots coupled to photonic crystal nanocavities fabricated from III-V material grown directly on silicon substrates. The high quality of the III-V material and photonic structures is emphasized by observation of the strong-coupling regime. This work opens-up the advantages of silicon photonics to the integration and scale-up of solid-state quantum optical systems.

  1. Implications of the Differential Toxicological Effects of III-V Ionic and Particulate Materials for Hazard Assessment of Semiconductor Slurries.

    Science.gov (United States)

    Jiang, Wen; Lin, Sijie; Chang, Chong Hyun; Ji, Zhaoxia; Sun, Bingbing; Wang, Xiang; Li, Ruibin; Pon, Nanetta; Xia, Tian; Nel, André E

    2015-12-22

    Because of tunable band gaps, high carrier mobility, and low-energy consumption rates, III-V materials are attractive for use in semiconductor wafers. However, these wafers require chemical mechanical planarization (CMP) for polishing, which leads to the generation of large quantities of hazardous waste including particulate and ionic III-V debris. Although the toxic effects of micron-sized III-V materials have been studied in vivo, no comprehensive assessment has been undertaken to elucidate the hazardous effects of submicron particulates and released III-V ionic components. Since III-V materials may contribute disproportionately to the hazard of CMP slurries, we obtained GaP, InP, GaAs, and InAs as micron- (0.2-3 μm) and nanoscale (particles for comparative studies of their cytotoxic potential in macrophage (THP-1) and lung epithelial (BEAS-2B) cell lines. We found that nanosized III-V arsenides, including GaAs and InAs, could induce significantly more cytotoxicity over a 24-72 h observation period. In contrast, GaP and InP particulates of all sizes as well as ionic GaCl3 and InCl3 were substantially less hazardous. The principal mechanism of III-V arsenide nanoparticle toxicity is dissolution and shedding of toxic As(III) and, to a lesser extent, As(V) ions. GaAs dissolves in the cell culture medium as well as in acidifying intracellular compartments, while InAs dissolves (more slowly) inside cells. Chelation of released As by 2,3-dimercapto-1-propanesulfonic acid interfered in GaAs toxicity. Collectively, these results demonstrate that III-V arsenides, GaAs and InAs nanoparticles, contribute in a major way to the toxicity of III-V materials that could appear in slurries. This finding is of importance for considering how to deal with the hazard potential of CMP slurries.

  2. Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Oberhoff, S.

    2007-12-03

    This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

  3. Hydrogen-Mediated Nitrogen Clustering in Dilute III-V Nitrides

    Science.gov (United States)

    Du, Mao-Hua; Limpijumnong, Sukit; Zhang, S. B.

    2006-08-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H2*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H2*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  4. General theory of the transverse dielectric constant of III-V semiconducting compounds

    Science.gov (United States)

    Kahen, K. B.; Leburton, J. P.

    1985-01-01

    A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

  5. Ultracompact electro-optic phase modulator based on III-V-on-silicon microdisk resonator.

    Science.gov (United States)

    Lloret, J; Kumar, R; Sales, S; Ramos, F; Morthier, G; Mechet, P; Spuesens, T; Van Thourhout, D; Olivier, N; Fédéli, J-M; Capmany, J

    2012-06-15

    A novel ultracompact electro-optic phase modulator based on a single 9 μm-diameter III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic waveguide is presented. Modulation is enabled by effective index modification through carrier injection. Proof-of-concept implementation involving binary phase shift keying modulation format is assembled. A power imbalance of ∼0.6  dB between both symbols and a modulation rate up to 1.8 Gbps are demonstrated without using any special driving technique.

  6. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  7. Study of III-V semiconductor band structure by synchrotron photoemission

    International Nuclear Information System (INIS)

    Williams, G.P.; Cerrina, F.; Anderson, J.; Lapeyre, G.J.; Smith, R.J.; Hermanson, J.; Knapp, J.A.

    1982-01-01

    Angle-resolved synchrotron photoemission studies of six III-V semiconductors have been carried out. For emission normal to the (110) plane of these materials, peaks in the experimental spectra were identified with the bands involved in the transitions, and the critical point energies X 3 , X 5 , and Σ 1 /sup min/, were determined. The data indicate that k perpendicular is conserved in the transitions. Comparison of the data with theoretical bands permits an evaluation of k perpendicular associated with the experimentally observed transition, and from this information the bands were plotted out

  8. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  9. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  10. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio

    2015-05-25

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio; Pelletier, Jeremie; Basset, Jean-Marie

    2015-01-01

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.

    Science.gov (United States)

    Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken

    2015-12-29

    The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

  13. Growth of Ag-seeded III-V Nanowires and TEM Characterization

    DEFF Research Database (Denmark)

    Lindberg, Anna Helmi Caroline

    appropriate, the density and the vertical yield were obtained. The crystal structures for the grown nanowires have been investigated with TEM.We have also performed additional growths to further understand exactly how the nanowire growth proceeds as well as to understand the limitations of using Ag as a seed......This thesis deals with growth and characterization of GaAs and InAs nanowires. Today Au nanoparticle-seeding together with self-catalyzing are the dominating techniques to grow III-V nanowires with molecular beam epitaxy. In this thesis we instead investigate the possibility to use Ag as seed...... particle for growth of GaAs and InAs nanowires. The aim with the experiments performed has been to conclude whether Ag can be used to nucleate and grow nanowires on III-V substrates with molecular beam epitaxy. To investigate this we have performed growths of GaAs nanowires on GaAs(111)B and GaAs(100...

  14. Caractérisations de matériaux et tests de composants des cellules solaires à base des nitrures des éléments III-V

    OpenAIRE

    Gorge , Vanessa

    2012-01-01

    Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photovoltaic applications, in particular for multi-junction solar cells, thanks to its large tunable band gap covering almost the entire solar spectrum. Then, it will be possible to reach high efficiency and low cost. However, one of the problems of InGaN material is the absence of lattice-matched substrate leading to high defect density which limits device performances. We have thus studied the feas...

  15. Structural properties of III-V zinc-blende semiconductors under pressure

    International Nuclear Information System (INIS)

    Froyen, S.; Cohen, M.L.

    1983-01-01

    The pseudopotential method within the local-density approximation is used to investigate the static and structural properties of some III-V compound semiconductors. Comparisons of calculated total energies as a function of volume and structure yield information about solid-solid phase transformations. At high pressures the results indicate that several metallic structures are lower in energy than the zinc-blende structure. From our results the compounds (AlP, AlAs, GaP, and GaAs) can be divided into two classes. In the Ga compounds, we find a pressure-induced phase transformation to either rocksalt, β-Sn, or NiAs, whereas in the Al compounds rocksalt and NiAs are stabilized with respect to β-Sn. All structures except zinc blende are metallic. We discuss the electronic structure of each phase and show how it relates to structural stability

  16. Hydrogen-mediated Nitrogen Clustering in Dilute III-V Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Du, M.-H.; Limpijumnong, S.; Zhang, S. B

    2006-01-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H*{sub 2}(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H*{sub 2}(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  17. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  18. Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

    Science.gov (United States)

    Vilenchik, Yaakov Yasha

    Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

  19. Solar cell with back side contacts

    Science.gov (United States)

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  20. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    Science.gov (United States)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  1. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    International Nuclear Information System (INIS)

    Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

    1994-01-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

  2. III-V semiconductors for photoelectrochemical applications: surface preparation and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Fertig, Dominic; Schaechner, Birgit; Calvet, Wofram; Kaiser, Bernhard; Jaegermann, Wolfram [TU Darmstadt, Fachbereich Materialwissenschaft, Fachgebiet Oberflaechenforschung (Germany)

    2011-07-01

    III-V semiconductors are promising reference systems for photoelectrochemical energy conversion. Therefore we have studied the influence of different acids and acidic solutions on the etching of p-doped gallium-arsenide and gallium-phosphide single crystal surfaces. From our experiments we conclude, that etching with HCl and subsequent annealing up to 450 C gives the best results for the removal of the carbonates and the oxides without affecting the quality of the sample. By treating the surfaces with ''piranha''-solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2}:H{sub 2}O/7:2:1), the creation of an oxide layer with well defined thickness can be achieved. For the creation of an efficient photoelectrochemical cell, Pt nanoparticles have been deposited from solution. These surfaces are then characterized by photoelectron spectroscopy and AFM. Further electrochemical measurements try to correlate the effect of the surface cleaning and the Pt deposition on the photoactivity of the GaAs- and GaP-semiconductors.

  3. Spin Relaxation in III-V Semiconductors in various systems: Contribution of Electron-Electron Interaction

    Science.gov (United States)

    Dogan, Fatih; Kesserwan, Hasan; Manchon, Aurelien

    2015-03-01

    In spintronics, most of the phenomena that we are interested happen at very fast time scales and are rich in structure in time domain. Our understanding, on the other hand, is mostly based on energy domain calculations. Many of the theoretical tools use approximations and simplifications that can be perceived as oversimplifications. We compare the structure, material, carrier density and temperature dependence of spin relaxation time in n-doped III-V semiconductors using Elliot-Yafet (EY) and D'yakanov-Perel'(DP) with real time analysis using kinetic spin Bloch equations (KSBE). The EY and DP theories fail to capture details as the system investigated is varied. KSBE, on the other hand, incorporates all relaxation sources as well as electron-electron interaction which modifies the spin relaxation time in a non-linear way. Since el-el interaction is very fast (~ fs) and spin-conserving, it is usually ignored in the analysis of spin relaxation. Our results indicate that electron-electron interaction cannot be neglected and its interplay with the other (spin and momentum) relaxation mechanisms (electron-impurity and electron-phonon scattering) dramatically alters the resulting spin dynamics. We use each interaction explicitly to investigate how, in the presence of others, each relaxation source behaves. We use GaAs and GaN for zinc-blend structure, and GaN and AlN for the wurtzite structure.

  4. FREQUENCY DEFORMITY SCOLIOSIS AND FLAT FEET IN PUPILS III, V.VII GRADE SCHOOL

    Directory of Open Access Journals (Sweden)

    Dejаn Gojković

    2013-07-01

    Full Text Available Scoliosis is a lateral deviation of the spine or the angular deviation of the normal position of one or more segmenata.Funkcional curve can be fully corrected until the internal structural scoliosis are bone disorders, muscle nerve elements that support the spine, and complete correction is impossible. Static role is reflected in the foot taking kisses body weight through the bones pop and transmission and distribution of weight on the main point of support of the foot and therefore subject to various changes in the normal foot status.Dinamic role is reflected in walking, running and jumping in different forms. Because of this, the percentage of foot disorders is particularly large in the form of lowering the testing we arche.Perform o.š.Pale Pale deformities in scoliosis and flat feet in students III, V, VII grade. Our aim was to verify the extent to which physical education classes take appropriate measures in the detection and removal of poor posture and physical deformities. For testing we used: clinical method for scoliosis, a method for flat feet -Thomson method.

  5. Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

    International Nuclear Information System (INIS)

    Glas, F; Patriarche, G; Harmand, J C

    2010-01-01

    We review and illustrate the impact of TEM on the study of nanowires of non-nitride III-V semiconductors, with particular emphasis on the understanding of the thermodynamics and kinetics of their formation assisted by nano-sized catalyst particles. Besides providing basic information about the morphology of the nanowires and their growth rate as a function of diameter, TEM offers insights into the peculiar crystalline structure that they adopt. We discuss the formation of the unusual wurtzite hexagonal crystalline phase and that of planar stacking defects in these nanowires and show that they are kinetically controlled. We also demonstrate the transformation of wurtzite into cubic sphalerite upon epitaxial burying of the nanowires. Nanowires are particularly interesting in that they allow the fabrication of precisely positioned quantum dots with well-defined geometries. In this respect, we discuss the formation of strained quantum-size inclusions in nanowires, their critical dimensions and the kinetic and thermodynamic factors governing the changes of the crystalline structure that sometimes occur around a hetero-interface.

  6. Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks

    International Nuclear Information System (INIS)

    Coelho, J; Patriarche, G; Glas, F; Saint-Girons, G; Sagnes, I

    2004-01-01

    We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temperatures. For both samples, the ordering is induced by the stress field of a periodic dislocation network (DN) shallowly buried and parallel to the surface. This DN is a grain boundary (GB) that forms, between a thin GaAs layer (on which growth was performed) and a GaAs substrate joined together by wafer bonding, in order to accommodate a tilt and a twist between these two crystals; both these misorientations are imposed in a controlled manner. This GB is composed of a one-dimensional network of mixed dislocations and of a one-dimensional network of screw dislocations. For both samples, the nanostructures observed by transmission electron microscopy (TEM) and atomic force microscopy are ordered by the underlying DN observed by TEM since they have same dimensions and orientations as the cells of the DN

  7. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  8. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Science.gov (United States)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  9. The influence of nitrogen on the photoluminescence of metastable III-V nitrides; Einflussvon Stickstoff auf die Photolumineszenz von metastabilen III-V-Nitriden

    Energy Technology Data Exchange (ETDEWEB)

    Hantke, K.

    2005-12-20

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  10. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  11. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  12. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  13. Concomitant glenohumeral pathologies in high-grade acromioclavicular separation (type III - V).

    Science.gov (United States)

    Markel, Jochen; Schwarting, Tim; Malcherczyk, Dominik; Peterlein, Christian-Dominik; Ruchholtz, Steffen; El-Zayat, Bilal Farouk

    2017-11-10

    Acromioclavicular joint (ACJ) dislocations are common injuries of the shoulder associated with physical activity. The diagnosis of concomitant injuries proves complicated due to the prominent clinical symptoms of acute ACJ dislocation. Because of increasing use of minimally invasive surgery techniques concomitant pathologies are diagnosed more often than with previous procedures. The aim of this study was to identify the incidence of concomitant intraarticular injuries in patients with high-grade acromioclavicular separation (Rockwood type III - V) as well as to reveal potential risk constellations. The concomitant pathologies were compiled during routine arthroscopically assisted treatment in altogether 163 patients (147 male; 16 female; mean age 36.8 years) with high-grade acromioclavicular separation (Rockwood type III: n = 60; Rockwood type IV: n = 6; Rockwood type V: n = 97). Acromioclavicular separation occurred less often in women than men (1:9). In patients under 35, the most common cause for ACJ dislocation was sporting activity (37.4%). Rockwood type V was observed significantly more often than the other types with 57.5% (Rockwood type III = 36.8%, Rockwood type IV 3.7%). Concomitant pathologies were diagnosed in 39.3% of the patients with that number rising to as much as 57.3% in patients above 35 years. Most common associated injuries were rotator cuff injuries (32.3%), chondral defects (30.6%) and SLAP-lesions (22.6%). Of all patients, 8.6% needed additional reconstructive surgery. Glenohumeral injuries are a much more common epiphenomenon during acromioclavicular separation than previously ascertained. High risk group for accompanying injuries are patients above 35 years with preexisting degenerative disease. The increasing use of minimally invasive techniques allows for an easier diagnosis and simultaneous treatment of the additional pathologies.

  14. A III-V nanowire channel on silicon for high-performance vertical transistors.

    Science.gov (United States)

    Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

    2012-08-09

    Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

  15. Phenomenological survey on the potential profile evolution in III-V binary compounds

    Directory of Open Access Journals (Sweden)

    Alejandro Mendoza Álvarez

    2011-01-01

    Full Text Available En este artículo se presenta el cambio en el perfil de eficacia potencial de algunos compuestos cuando el bandmixing de huecos ligeros y pesados se altera. Se obtuvieron mediante la aplicación de este teorema generalizado Shur a un problema de valores propios cuadrática obtenidos a partir de un sistema con N ecuaciones de segundo orden, junto en el contexto de la aproximación de masa efectiva multibanda. Se consideraron los valores de energía incidente que fue menor, igual y superior a la altura de la barrera de dispersión potencial de diferentes compuestos de semiconductores III-V binario. La mayoría de las propiedades estándar de los compuestos binarios en este estudio están garantizados, pero no todos los materiales que elegimos, han puesto de manifiesto la evolución que se espera en su perfil de potencial efectivo: algunos de los que constituyen los pozos cuánticos (QW en aplicaciones tecnológicas sólo convertirse en efectiva barrera (B las conductas de los agujeros de luz (LH cuando están en la energía incidente diferente (E se extiende y bandmixing diferentes presentes. Ninguno de los compuestos que constituyen barreras para las aplicaciones tecnológicas en este estudio se convierte en eficaz comportamientos QW válido tanto para la LH y HH. Sorprendentemente, todos los compuestos en este estudio que constituyen barreras estándar en las aplicaciones tecnológicas, las transiciones presente desde CS a B para la LH en el rango donde el valor de E es mayor que la altura de la barrera.

  16. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  17. High Efficiency Quantum Dot III-V Thermophotovoltaic Cell for Space Power, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Quantum dots are nanoscale materials that have already improved the performance of optical sensors, lasers, light emitting diodes and solar cells. The unique...

  18. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  19. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  20. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  1. First principles calculation of material properties of group IV elements and III-V compounds

    Science.gov (United States)

    Malone, Brad Dean

    This thesis presents first principles calculations on the properties of group IV elements and group III-V compounds. It includes investigations into what structure a material is likely to form in, and given that structure, what are its electronic, optical, and lattice dynamical properties as well as what are the properties of defects that might be introduced into the sample. The thesis is divided as follows: • Chapter 1 contains some of the conceptual foundations used in the present work. These involve the major approximations which allow us to approach the problem of systems with huge numbers of interacting electrons and atomic cores. • Then, in Chapter 2, we discuss one of the major limitations to the DFT formalism introduced in Chapter 1, namely its inability to predict the quasiparticle spectra of materials and in particular the band gap of a semiconductor. We introduce a Green's function approach to the electron self-energy Sigma known as the GW approximation and use it to compute the quasiparticle band structures of a number of group IV and III-V semiconductors. • In Chapter 3 we present a first-principles study of a number of high-pressure metastable phases of Si with tetrahedral bonding. The phases studied include all experimentally determined phases that result from decompression from the metallic beta-Sn phase, specifically the BC8 (Si-III), hexagonal diamond (Si-IV), and R8 (Si-XII). In addition to these, we also study the hypothetical ST12 structure found upon decompression from beta-Sn in germanium. • Our attention is then turned to the first principles calculations of optical properties in Chapter 4. The Bethe-Salpeter equation is then solved to obtain the optical spectrum of this material including electron-hole interactions. The calculated optical spectrum is compared with experimental data for other forms of silicon commonly used in photovoltaic devices, namely the cubic, polycrystalline, and amorphous forms. • In Chapter 5 we present

  2. Ternary System with Controlled Structure: A New Strategy toward Efficient Organic Photovoltaics.

    Science.gov (United States)

    Cheng, Pei; Wang, Rui; Zhu, Jingshuai; Huang, Wenchao; Chang, Sheng-Yung; Meng, Lei; Sun, Pengyu; Cheng, Hao-Wen; Qin, Meng; Zhu, Chenhui; Zhan, Xiaowei; Yang, Yang

    2018-02-01

    Recently, a new type of active layer with a ternary system has been developed to further enhance the performance of binary system organic photovoltaics (OPV). In the ternary OPV, almost all active layers are formed by simple ternary blend in solution, which eventually leads to the disordered bulk heterojunction (BHJ) structure after a spin-coating process. There are two main restrictions in this disordered BHJ structure to obtain higher performance OPV. One is the isolated second donor or acceptor domains. The other is the invalid metal-semiconductor contact. Herein, the concept and design of donor/acceptor/acceptor ternary OPV with more controlled structure (C-ternary) is reported. The C-ternary OPV is fabricated by a sequential solution process, in which the second acceptor and donor/acceptor binary blend are sequentially spin-coated. After the device optimization, the power conversion efficiencies (PCEs) of all OPV with C-ternary are enhanced by 14-21% relative to those with the simple ternary blend; the best PCEs are 10.7 and 11.0% for fullerene-based and fullerene-free solar cells, respectively. Moreover, the averaged PCE value of 10.4% for fullerene-free solar cell measured in this study is in great agreement with the certified one of 10.32% obtained from Newport Corporation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kunert, B.; Guo, W.; Mols, Y.; Pantouvaki, M.; Van Campenhout, J.; Langer, R.; Barla, K. [imec, Kapeldreef 75, 3001 Heverlee (Belgium); Tian, B.; Wang, Z.; Shi, Y.; Van Thourhout, D. [Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 15, 9052 Gent (Belgium)

    2016-08-29

    We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (≤500 nm) were processed in a silicon oxide (SiO{sub 2}) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL.

  4. Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

    Science.gov (United States)

    Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

    2011-05-23

    We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

  5. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-01-01

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  6. Characterization of III-V nanowires for photovoltaic devices using advanced electron microscopy techniques

    DEFF Research Database (Denmark)

    Persson, Johan Mikael

    In this work, the crystal structure of epitaxially grown semiconductor nanowires has been analysed using electron microscopy and to some extent X-ray diffractometry. The goal of the EU project which this work was a part of was to build multi-junction solar cells with nanowires as the main building...... of the crystal structure at the junction. This thesis also comments on some unusual properties and _ndings of the examined nanowires: Some nanowires sported a droplet-like protrusion of the catalyst gold particle reaching into the solid center of the nanowire. This feature can be discussed in terms of nanowire...

  7. New ternary superconducting germanides

    Science.gov (United States)

    Moschalkov, V. V.; Muttik, I. G.; Samarin, N. A.; Seropegin, Yu. D.; Rudometkina, M. V.

    1991-12-01

    We have studied the structure, electrical and magnetic properties of new ternary compounds with germanium and transition metals of IV and V groups (Ti 0.7V 0.3Ge 3, Hf 2V 3Ge, Zr 32-36V 32-36Ge 30-32, Hf 2Nb 3Ge 4, HfVGe, Zr 15-17V 39-40Ge 44-45, Hf 10.8-21.7V 36.0-42.8). The homogeneity fields for all new phases are determined. Resistivity (T) and magnetic susceptibility χ(T) are investigated at T=4.2…300 K. Two new superconductors have been found - Zr 32-36V 32-36Ge 30-32 and HfVGe with T c=4.7 K and 5.7 K, respectively.

  8. III-V Ultra-Thin-Body InGaAs/InAs MOSFETs for Low Standby Power Logic Applications

    Science.gov (United States)

    Huang, Cheng-Ying

    As device scaling continues to sub-10-nm regime, III-V InGaAs/InAs metal- oxide-semiconductor ?eld-e?ect transistors (MOSFETs) are promising candidates for replacing Si-based MOSFETs for future very-large-scale integration (VLSI) logic applications. III-V InGaAs materials have low electron effective mass and high electron velocity, allowing higher on-state current at lower VDD and reducing the switching power consumption. However, III-V InGaAs materials have a narrower band gap and higher permittivity, leading to large band-to-band tunneling (BTBT) leakage or gate-induced drain leakage (GIDL) at the drain end of the channel, and large subthreshold leakage due to worse electrostatic integrity. To utilize III-V MOSFETs in future logic circuits, III-V MOSFETs must have high on-state performance over Si MOSFETs as well as very low leakage current and low standby power consumption. In this dissertation, we will report InGaAs/InAs ultra-thin-body MOSFETs. Three techniques for reducing the leakage currents in InGaAs/InAs MOSFETs are reported as described below. 1) Wide band-gap barriers: We developed AlAs0.44Sb0.56 barriers lattice-match to InP by molecular beam epitaxy (MBE), and studied the electron transport in In0.53Ga0.47As/AlAs 0.44Sb0.56 heterostructures. The InGaAs channel MOSFETs using AlAs0.44Sb0.56 bottom barriers or p-doped In0.52 Al0.48As barriers were demonstrated, showing significant suppression on the back barrier leakage. 2) Ultra-thin channels: We investigated the electron transport in InGaAs and InAs ultra-thin quantum wells and ultra-thin body MOSFETs (t ch ~ 2-4 nm). For high performance logic, InAs channels enable higher on-state current, while for low power logic, InGaAs channels allow lower BTBT leakage current. 3) Source/Drain engineering: We developed raised InGaAs and recessed InP source/drain spacers. The raised InGaAs source/drain spacers improve electrostatics, reducing subthreshold leakage, and smooth the electric field near drain, reducing

  9. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  10. Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

    International Nuclear Information System (INIS)

    Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

    1988-01-01

    A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

  11. The influence of nitrogen on the photoluminescence of metastable III-V nitrides

    International Nuclear Information System (INIS)

    Hantke, K.

    2005-01-01

    The work presented here mainly summarizes experimental and theoretical results enlightening the material-specific, optical properties of (GaIn)(NAs). The primarily used experiment is the time-resolved photoluminescence spectroscopy. The comparison of experiment and theory yields a simple exponential form for the density of localized states. Furthermore it can be confirmed that the typical energy scale of the localization is diminished by the annealing step as well as by the hydrogenation process. In a next step, the investigation of (GaIn)(NAs) epitactical layers, that were optimized for solar cell application, reveals astonishing features: The minority-carrier diffusion-length of the p-doped layers is found to be slightly higher than for the n-doped material implying that (GaIn)(NAs) solar cells with a p-on-n structure should be preferred in terms of higher quantum efficiency. A new effect found during the investigations is the optimization of the internal quantum efficiency of the (GaIn)(NAs) structures after irradiation with intensive laser light attributed to the laser-induced annealing of defects. The final paragraph concentrates on the successful comparison of time-resolved photoluminescence, photo-modulated reflection measurements and a microscopic many-body theory. A profound understanding of the type-I type-II transition in (GaIn)As/Ga(NAs) heterostructures is achieved resulting in material-specific information as e.g. the temperature-dependent bandgap energies, the band offsets in Ga(NAs)/GaAs and (GaIn)As/Ga(NAs) respectively, as well as the interaction potential VN dependent on the nitrogen content. Finally, the fundamental dependence on excitation density investigated in the experiment is theoretically quantified not only for the photoluminescence intensity and but for the lifetimes, too. (orig.)

  12. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on the... mines, provided with an automatic signal device to give an alarm when the fan stops. The signal device...

  13. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Directory of Open Access Journals (Sweden)

    N. Daix

    2014-08-01

    Full Text Available We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  14. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Energy Technology Data Exchange (ETDEWEB)

    Daix, N., E-mail: dai@zurich.ibm.com; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Fompeyrine, J. [IBM Research - Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Hartmann, J. M. [CEA, LETI 17, rue des Martyrs, F-38054 Grenoble (France); Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D. [IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Route 134 Yorktown Heights, New York 10598 (United States)

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  15. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Science.gov (United States)

    Daix, N.; Uccelli, E.; Czornomaz, L.; Caimi, D.; Rossel, C.; Sousa, M.; Siegwart, H.; Marchiori, C.; Hartmann, J. M.; Shiu, K.-T.; Cheng, C.-W.; Krishnan, M.; Lofaro, M.; Kobayashi, M.; Sadana, D.; Fompeyrine, J.

    2014-08-01

    We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm-2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000-3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  16. An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

    Science.gov (United States)

    Rohde, S.; Barnett, S. A.; Choi, C.-H.

    1989-06-01

    A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

  17. Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

    Science.gov (United States)

    Nagaiah, Padmaja

    As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

  18. Substrate effects on the formation of flat Ag films on (110) surfaces of III-V compound semiconductors

    International Nuclear Information System (INIS)

    Chao, K.; Zhang, Z.; Ebert, P.; Shih, C.K.

    1999-01-01

    Ag films grown at 135 K on (110) surfaces of III-V compound semiconductors and annealed at room temperature are investigated by scanning tunneling microscopy and low-energy electron diffraction. Ag films on Ga-V semiconductors are well ordered, atomically flat, and exhibit a specific critical thickness, which is a function of the substrate material. Films grown on In-V semiconductors are still rather flat, but significantly more disordered. The (111) oriented Ag films on III-arsenides and III-phosphides exhibit a clear twofold superstructure. Films on III-antimonides exhibit threefold low-energy electron diffraction images. The morphology of the Ag films can be explained on the basis of the electronic growth mechanism. copyright 1999 The American Physical Society

  19. The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

    Directory of Open Access Journals (Sweden)

    Florent Ravaux

    2017-06-01

    Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

  20. Broadband microwave photonic fully tunable filter using a single heterogeneously integrated III-V/SOI-microdisk-based phase shifter.

    Science.gov (United States)

    Lloret, Juan; Morthier, Geert; Ramos, Francisco; Sales, Salvador; Van Thourhout, Dries; Spuesens, Thijs; Olivier, Nicolas; Fédéli, Jean-Marc; Capmany, José

    2012-05-07

    A broadband microwave photonic phase shifter based on a single III-V microdisk resonator heterogeneously integrated on and coupled to a nanophotonic silicon-on-insulator waveguide is reported. The phase shift tunability is accomplished by modifying the effective index through carrier injection. A comprehensive semi-analytical model aiming at predicting its behavior is formulated and confirmed by measurements. Quasi-linear and continuously tunable 2π phase shifts at radiofrequencies greater than 18 GHz are experimentally demonstrated. The phase shifter performance is also evaluated when used as a key element in tunable filtering schemes. Distortion-free and wideband filtering responses with a tuning range of ~100% over the free spectral range are obtained.

  1. Pesan Sosial dalam Foto Jurnalistik (Analisis Semiotika dalam Buku ‘Jakarta Estetika Banal’, Bab I, III, V, dan VII

    Directory of Open Access Journals (Sweden)

    Jaka Priyo Nuswantara

    2014-01-01

    Full Text Available This study aims to determine the meaning of denotation and connotation, and social message in the book 'Aesthetics Jakarta Banal', Chapter I, III, V, and VII. The author uses the theory Semiotics of Roland Barthes. Where Semiotics of Roland Barthes uses two stages of analysis denotation and connotation. The research method used is a Roland Barthes semiotic analysis method on the basis that this study analyzes the messages conveyed in the book 'Aesthetics Jakarta Banal', which gives an explanation and overview of issues related to the formulation. Inferred outline text analysis results indicate that the social life of silence in the city with the concept of light to be seen. Of all the images examined, the object edges and political society into something dominant to be something that should be understood by the reader.

  2. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    International Nuclear Information System (INIS)

    Zhao, W.; Steidl, M.; Paszuk, A.; Brückner, S.; Dobrich, A.; Supplie, O.; Kleinschmidt, P.; Hannappel, T.

    2017-01-01

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H_2. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H_2-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H_2 ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  3. Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, W.; Steidl, M.; Paszuk, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Dobrich, A. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Supplie, O. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany); Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Hannappel, T., E-mail: thomas.hannappel@tu-ilmenau.de [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institut für Solare Brennstoffe, 14109 Berlin (Germany)

    2017-01-15

    Highlights: • We investigate the Si(111) surface prepared in CVD ambient at 1000 °C in 950 mbar H{sub 2}. • UHV-based XPS, LEED, STM and FTIR as well as ambient AFM are applied. • After processing the Si(111) surface is free of contamination and atomically flat. • The surface exhibits a (1 × 1) reconstruction and monohydride termination. • Wet-chemical pretreatment and homoepitaxy are required for a regular step structure. - Abstract: For well-defined heteroepitaxial growth of III-V epilayers on Si(111) substrates the atomic structure of the silicon surface is an essential element. Here, we study the preparation of the Si(111) surface in H{sub 2}-based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV). Applying complementary UHV-based techniques, we derive a complete picture of the atomic surface structure and its chemical composition. X-ray photoelectron spectroscopy measurements after high-temperature annealing confirm a Si surface free of any traces of oxygen or other impurities. The annealing in H{sub 2} ambient leads to a monohydride surface termination, as verified by Fourier-transform infrared spectroscopy. Scanning tunneling microscopy confirms a well ordered, atomically smooth surface, which is (1 × 1) reconstructed, in agreement with low energy electron diffraction patterns. Atomic force microscopy reveals a significant influence of homoepitaxy and wet-chemical pretreatment on the surface morphology. Our findings show that wet-chemical pretreatment followed by high-temperature annealing leads to contamination-free, atomically flat Si(111) surfaces, which are ideally suited for subsequent III-V heteroepitaxy.

  4. Intensity of adjuvant chemotherapy regimens and grade III-V toxicities among elderly stage III colon cancer patients.

    Science.gov (United States)

    van Erning, F N; Razenberg, L G E M; Lemmens, V E P P; Creemers, G J; Pruijt, J F M; Maas, H A A M; Janssen-Heijnen, M L G

    2016-07-01

    The aim of this study was to provide insight in the use, intensity and toxicity of therapy with capecitabine and oxaliplatin (CAPOX) and capecitabine monotherapy (CapMono) among elderly stage III colon cancer patients treated in everyday clinical practice. Data from the Netherlands Cancer Registry were used. All stage III colon cancer patients aged ≥70 years diagnosed in the southeastern part between 2005 and 2012 and treated with CAPOX or CapMono were included. Differences in completion of all planned cycles, cumulative dosages and toxicity between both regimens were evaluated. One hundred ninety-three patients received CAPOX and 164 patients received CapMono; 33% (n = 63) of the patients receiving CAPOX completed all planned cycles of both agents, whereas 55% (n = 90) of the patients receiving CapMono completed all planned cycles (P characteristics, CapMono was associated with a lower odds of developing grade III-V toxicity than CAPOX (odds ratio 0.54, 95% confidence interval 0.33-0.89). For patients treated with CAPOX, the most common toxicities were gastrointestinal (29%), haematological (14%), neurological (11%) and other toxicity (13%). For patients treated with CapMono, dermatological (17%), gastrointestinal (13%) and other toxicity (11%) were the most common. CAPOX is associated with significantly more grade III-V toxicities than CapMono, which had a pronounced impact on the cumulative dosage received and completion of all planned cycles. In this light, CapMono seems preferable over CAPOX. Copyright © 2016 Elsevier Ltd. All rights reserved.

  5. Ternary Weighted Function and Beurling Ternary Banach Algebra l1ω(S

    Directory of Open Access Journals (Sweden)

    Mehdi Dehghanian

    2011-01-01

    Full Text Available Let S be a ternary semigroup. In this paper, we introduce our notation and prove some elementary properties of a ternary weight function ω on S. Also, we make ternary weighted algebra l1ω(S and show that l1ω(S is a ternary Banach algebra.

  6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  7. High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

    Directory of Open Access Journals (Sweden)

    Xianshu eLuo

    2015-04-01

    Full Text Available Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V-gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W bonding technology which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V-die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP laser, lateral-coupled distributed feedback (LC-DFB laser with side wall grating, and mode-locked laser (MLL. From these results, the presented multiple D2W bonding technology can be a key enabler towards the large-scale heterogeneous integration of optoelectronic integrated circuits (H-OEIC.

  8. True ternary fission in 310126X

    International Nuclear Information System (INIS)

    Banupriya, B.; Vijayaraghavan, K.R.; Balasubramaniam, M.

    2015-01-01

    All possible combinations are minimized by the two dimensional minimization process and minimized with respect to neutron numbers and proton numbers of the fragments. Potential energy is low and Q - value is high at true ternary fission region. It shows that true ternary mode is the dominant mode in the ternary fission of superheavy nuclei. Also, the results show that the fragments with neutron magic numbers are the dominant one in the ternary fission of superheavy nuclei whereas the fragments with proton magic numbers are the dominant one in the ternary fission of heavy nuclei

  9. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Na

    2015-12-11

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  10. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    International Nuclear Information System (INIS)

    Yu, Na

    2015-01-01

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  11. Pressure-induced structural change of liquid InAs and the systematics of liquid III-V compounds

    International Nuclear Information System (INIS)

    Hattori, T.; Tsuji, K.; Miyata, Y.; Sugahara, T.; Shimojo, F.

    2007-01-01

    To understand the pressure-induced structural changes of liquid III-V compounds systematically, the pressure dependence of l-InAs was investigated using the synchrotron x-ray diffraction and an ab initio molecular-dynamics simulation (AIMD). The x-ray diffraction experiments revealed that the liquid changes its compression behavior from a nearly uniform type to a nonuniform one around 9 GPa. Corresponding to this change, the coordination number (China), which is maintained up to 9 GPa, markedly increases from 6.0 to 7.5. The AIMD simulation revealed that this change is related to the change in the pressure dependence of all three pair correlations. In particular, a marked change is observed in the As-As correlation; in the low-pressure region, the position of the first peak in g AsAs (r), r AsAs , increases while maintaining the CN AsAs , but in the high-pressure region, the r AsAs stops increasing and the CN AsAs begins to increase. The AIMD simulation also revealed that each partial structure of l-InAs is similar to that for the pure-element liquid with the same valence electron number. Upon compression, each partial structure approaches the respective one for a heavier element in the same group. These findings suggest that the structures of liquid compounds are locally controlled by the number of the valence electrons in each ion pair and that the change in each partial structure obeys the empirical rule that the high-pressure state resembles the ambient state of a heavier element in the same group. Comparing the pressure-induced structural change of l-InAs to those of other liquid III-V compounds (GaSb and InSb) has revealed that, although the high-pressure behaviors of these three liquids are apparently different, their structural changes are systematically understood by a common structural sequence. This systematics originates from the same effect on each partial structure between increasing the atomic number and the pressurization

  12. Study of the transport phenomena in III-V materials by the Monte Carlo method: application to INAS

    International Nuclear Information System (INIS)

    Bouazza, B.; Amer, L.; Guen-Bouazza, A.; Sayeh, C.; Chabanne-Sari, N.E.; Gontrand, C.

    2004-01-01

    Full text.The microelectronic comprehension of the phenomena which describes the behavior of the carriers in semiconductor materials requires the knowledge of energy distribution function. This distribution function is obtained by the resolution of Boltzmann equation which is very hard to solve analytically. Other methods based on modeling are actually successfully used to solve this equation. This Monte Carlo method is among of the most methods used for studying electronics components operations. It consists to follow the evolution of electron packets in real space, where each electron subjected to the electric field present in material goes interact with the crystal lattice. It is therefore an iterative process made up from a whole coasting flights stopped by acoustics interactions, polar and non polar optics, piezoelectric, inter-valley, impurity, ionization and surface. By applying this method to the III-V material: InAs. We can describe the behavior of the carriers from dynamic and energetic point of view (variation speed according to the field). The simulation is applied, taking into account variation of the carriers according to time in the non stationary mode, and the effect of temperature, and measurements doping. Results obtained are shown to be comparable to those of the theory

  13. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-01-01

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  14. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  15. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  16. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

    Science.gov (United States)

    El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

    2015-12-16

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  17. Nonradiative lifetime extraction using power-dependent relative photoluminescence of III-V semiconductor double-heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Walker, A. W., E-mail: alexandre.walker@ise.fraunhofer.de; Heckelmann, S.; Karcher, C.; Höhn, O.; Went, C.; Niemeyer, M.; Bett, A. W.; Lackner, D. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany)

    2016-04-21

    A power-dependent relative photoluminescence measurement method is developed for double-heterostructures composed of III-V semiconductors. Analyzing the data yields insight into the radiative efficiency of the absorbing layer as a function of laser intensity. Four GaAs samples of different thicknesses are characterized, and the measured data are corrected for dependencies of carrier concentration and photon recycling. This correction procedure is described and discussed in detail in order to determine the material's Shockley-Read-Hall lifetime as a function of excitation intensity. The procedure assumes 100% internal radiative efficiency under the highest injection conditions, and we show this leads to less than 0.5% uncertainty. The resulting GaAs material demonstrates a 5.7 ± 0.5 ns nonradiative lifetime across all samples of similar doping (2–3 × 10{sup 17 }cm{sup −3}) for an injected excess carrier concentration below 4 × 10{sup 12 }cm{sup −3}. This increases considerably up to longer than 1 μs under high injection levels due to a trap saturation effect. The method is also shown to give insight into bulk and interface recombination.

  18. Novel materials for high-efficiency solar cells

    Science.gov (United States)

    Kojima, Nobuaki; Natori, Masato; Suzuki, Hidetoshi; Inagaki, Makoto; Ohshita, Yoshio; Yamaguchi, Masafumi

    2009-08-01

    Our Toyota Technological Institute group has investigated various novel materials for solar cells from organic to III-V compound materials. In this paper, we report our recent results in conductivity control of C60 thin films by metal-doping for organic solar cells, and mobility improvement of (In)GaAsN compounds for III-V tandem solar cells. The epitaxial growth of Mg-doped C60 films was attempted. It was found that the epitaxial growth of Mg-doped C60 film was enabled by using mica (001) substrate in the low Mg concentration region (Mg/C60 molar ratio defects leads this improvement.

  19. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  20. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  1. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

    Science.gov (United States)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.

  2. Some new ternary linear codes

    Directory of Open Access Journals (Sweden)

    Rumen Daskalov

    2017-07-01

    Full Text Available Let an $[n,k,d]_q$ code be a linear code of length $n$, dimension $k$ and minimum Hamming distance $d$ over $GF(q$. One of the most important problems in coding theory is to construct codes with optimal minimum distances. In this paper 22 new ternary linear codes are presented. Two of them are optimal. All new codes improve the respective lower bounds in [11].

  3. Comprehension of Postmetallization Annealed MOCVD-TiO2 on (NH42S Treated III-V Semiconductors

    Directory of Open Access Journals (Sweden)

    Ming-Kwei Lee

    2012-01-01

    Full Text Available The electrical characteristics of TiO2 films grown on III-V semiconductors (e.g., p-type InP and GaAs by metal-organic chemical vapor deposition were studied. With (NH42S treatment, the electrical characteristics of MOS capacitors are improved due to the reduction of native oxides. The electrical characteristics can be further improved by the postmetallization annealing, which causes hydrogen atomic ion to passivate defects and the grain boundary of polycrystalline TiO2 films. For postmetallization annealed TiO2 on (NH42S treated InP MOS, the leakage current densities can reach 2.7 × 10−7 and 2.3 × 10−7 A/cm2 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 46 and 1.96 × 1012 C/cm2, respectively. The interface state density is 7.13×1011 cm−2 eV−1 at the energy of 0.67 eV from the edge of valence band. For postmetallization annealed TiO2 on (NH42S treated GaAs MOS, The leakage current densities can reach 9.7×10−8 and 1.4×10−7 at ±1 MV/cm, respectively. The dielectric constant and effective oxide charges are 66 and 1.86×1012 C/cm2, respectively. The interface state density is 5.96×1011 cm−2 eV−1 at the energy of 0.7 eV from the edge of valence band.

  4. Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping' technique on non-planar III V substrates

    Science.gov (United States)

    Eliás, P.; Strichovanec, P.; Kostic, I.; Novák, J.

    2006-12-01

    A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist layers on non-planar (1 0 0)-oriented III-V substrates, which had a variety of three-dimensional (3D) topographies micromachined in them that consisted, e.g., of mesa ridges confined to side facets with variable tilt, inverted pyramidal holes and stubs confined to perpendicular side facets. All objects were sharp-edged. In each draping experiment, an AZ5214-E sheet was (1) formed floating on the water surface, (2) lowered onto a non-planar substrate and (3) draped over it during drying to form either self-sustained, or conformal, or planarizing layers over the non-planar substrates. The draping process is based on the depression of the glass transition temperature Tg of AZ5214-E material induced by penetrant water molecules that interact with AZ5214-E. During the process, the molecules are initially trapped under an AZ5214-E sheet and then transported out through the sheet via permeation. The water-AZ5214-E interaction modifies the stiffness κ of the sheet. The magnitude of the effect depends on temperature T and on partial water vapour pressure difference p(T, P, κ): the net effect is that Tg = f(C(T, P), p(T, P, κ)) is lowered as the concentration C of water increases with T and p, where P is the permeability of the sheet. The interaction depressed the Tg of the sheets as low as or lower than 53 °C for 6 µm thick sheets. At room temperature T Tg, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As a result, it can either contour or planarize the topography depending on its geometry and thickness of the sheet.

  5. High efficiency thin-film solar cells for space applications: challenges and opportunities

    NARCIS (Netherlands)

    Leest, R.H. van

    2017-01-01

    In theory high efficiency thin-film III-V solar cells obtained by the epitaxial lift-off (ELO) technique offer excellent characteristics for application in space solar panels. The thesis describes several studies that investigate the space compatibility of the thin-film solar cell design developed

  6. Ternary scandium and transition metals germanides

    International Nuclear Information System (INIS)

    Kotur, B.Ya.

    1992-01-01

    Brief review of data on phase diagram of ternary Sc-Me-Ge systems (Me-d - , f-transition element) is given. Isothermal sections at 870 and 1070 K of 17 ternary systems are plotted. Compositions and their structural characteristics are presented. Variability of crystal structure is typical for ternary scandium germanides: 70 compounds with the studied structure belong to 23 structural types. Ternary germanides isostructural to types of Sm 4 Ge 4 , ZrCrSi 2 , ZrNiAl, ScCeSi, TiNiSi U 4 Re 7 Si 6 145 compounds from 70 under investigation are mostly formed in studied systems

  7. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  8. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

    Science.gov (United States)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

    2018-02-01

    Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

  9. [Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament at stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V].

    Science.gov (United States)

    Hu, Wen-yue; Yu, Chong; Huang, Zhong-ming; Han, Lei

    2015-06-01

    To explore clinical efficacy of double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I in treating acromioclavicular dislocation with Rockwood type III - V . From January 2010 to September 2013, 56 patients with Rockwood type III - V acromioclavicular dislocation were treated by operation, including 20 males and 36 femlaes, aged from 32 to 52 years old with an average of 38.5 years old. Twenty-five patients were on the left side and 31 cases on the right side. The time from injury to operation was from 3 to 14 days, averaged 7 days. All patients were diagnosed as acromioclavicular dislocation with Rockwood type III - V, and double Endobutto were used to reconstituting coracoclavicular ligament, line metal anchors were applied for repairing acromioclavicular ligament. Postoperative complications were observed, Karlsson and Constant-Murley evaluation standard were used to evaluate clinical effects. All patients were followed up from 8 to 24 months with average of 11 months. According to Karlsson evaluation standard at 6 months after operation,42 cases were grade A, 13 were grade B and 1 was grade C. Constant-Murley score were improved from (42.80±5.43) before operation to (91.75±4.27) at 6 months after operation. All items at 6 months after operation were better than that of preoperative items. Forty-eight patients got excellent results, 7 were moderate and only 1 with bad result. No shoulder joint adhesion, screw loosening or breakage were occurred during following up. Double Endobutto reconstituting coracoclavicular ligament combined with repairing acromioclavicular ligament in stage I for the treatment of acromioclavicular dislocation with Rockwood type III - V could obtain early staisfied clinical effects, and benefit for early recovery of shoulder joint function.

  10. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

    Science.gov (United States)

    Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

    2018-02-19

    We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

  11. High-Efficient Circuits for Ternary Addition

    Directory of Open Access Journals (Sweden)

    Reza Faghih Mirzaee

    2014-01-01

    Full Text Available New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33 μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications.

  12. Exploration of GaInT1P and Related T1-Containing III-V Alloys for Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, D.J.; Kibbler, A.E.; Kurtz, S.R.

    1998-11-02

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics.

  13. Exploration of GaInTlP and related Tl-containing III-V alloys for photovoltaics

    International Nuclear Information System (INIS)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.

    1999-01-01

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics

  14. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  15. All-optical symmetric ternary logic gate

    Science.gov (United States)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  16. Performance Estimation for Lowpass Ternary Filters

    Directory of Open Access Journals (Sweden)

    Brenton Steele

    2003-11-01

    Full Text Available Ternary filters have tap values limited to −1, 0, or +1. This restriction in tap values greatly simplifies the multipliers required by the filter, making ternary filters very well suited to hardware implementations. Because they incorporate coarse quantisation, their performance is typically limited by tap quantisation error. This paper derives formulae for estimating the achievable performance of lowpass ternary filters, thereby allowing the number of computationally intensive design iterations to be reduced. Motivated by practical communications systems requirements, the performance measure which is used is the worst-case stopband attenuation.

  17. Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

    Directory of Open Access Journals (Sweden)

    Konstantinos Pantzas

    2015-10-01

    Full Text Available Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si surfaces and nanostructured ones, using Silicon on Isolator (SOI or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

  18. Ternary networks reliability and Monte Carlo

    CERN Document Server

    Gertsbakh, Ilya; Vaisman, Radislav

    2014-01-01

    Ternary means “based on three”. This book deals with reliability investigations of  networks whose components subject to failures can be in three states –up, down and middle (mid), contrary to traditionally considered networks  having only binary (up/down) components. Extending binary case to ternary allows to consider more realistic and flexible models for communication, flow and supply networks.

  19. Investigation of transient photoresponse of WSSe ternary alloy crystals

    Science.gov (United States)

    Chauhan, Payal; Solanki, G. K.; Tannarana, Mohit; Pataniya, Pratik; Patel, K. D.; Pathak, V. M.

    2018-05-01

    Transition metal chalcogenides have been studied intensively in recent time due to their tunability of electronic properties by compositional change, alloying and by transforming bulk material into crystalline 2D structure. These changes lead to the development of verities of next generation opto-electronic device applications such as solar cells, FETs and flexible detectors etc. In present work, we report growth and characterization of crystalline ternary alloy WSSe by direct vapour transport technique. A photodetector is constructed using grown crystals to study its transient photoresponse under polychromatic radiation. The WSSe crystals are mechanically exfoliated to thickness of 3 µm and the lateral dimension of prepared sample is 2.25 mm2. The time-resolved photoresponse is studied under polychromatic illumination of power density ranging from 10 to 40 mW/cm2. The photo response is also studied under different bias voltages ranging from 0.1 V to 0.5 V. The typical photodetector parameters i.e. photocurrent, rise and fall time, responsivity and sensitivity are evaluated and discussed in light of the ternary alloy composition.

  20. Diagnostic accuracy of circulating thyrotropin receptor messenger RNA combined with neck ultrasonography in patients with Bethesda III-V thyroid cytology.

    Science.gov (United States)

    Aliyev, Altay; Patel, Jinesh; Brainard, Jennifer; Gupta, Manjula; Nasr, Christian; Hatipoglu, Betul; Siperstein, Allan; Berber, Eren

    2016-01-01

    The aim of this study was to analyze the usefulness of thyrotropin receptor messenger RNA (TSHR-mRNA) combined with neck ultrasonography (US) in the management of thyroid nodules with Bethesda III-V cytology. Cytology slides of patients with a preoperative fine needle aspiration (FNA) and TSHR-mRNA who underwent thyroidectomy between 2002 and 2011 were recategorized based on the Bethesda classification. Results of thyroid FNA, TSHR-mRNA, and US were compared with the final pathology. Sensitivity, specificity, positive predictive value (PPV), and negative predictive value (NPV) were calculated. There were 12 patients with Bethesda III, 112 with Bethesda IV, and 58 with Bethesda V cytology. The sensitivity of TSHR-mRNA in predicting cancer was 33%, 65%, and 79 %, and specificity was 67%, 66%, and 71%, for Bethesda III, IV, and V categories, respectively. For the same categories, the PPV of TSHR-mRNA was 25%, 33%, and 79%, respectively; whereas the NPV was 75%, 88%, and 71%, respectively. The addition of neck US to TSHR-mRNA increased the NPV to 100% for Bethesda III, and 86%, for Bethesda IV, and 82% for Bethesda V disease. This study documents the potential usefulness of TSHR-mRNA for thyroid nodules with Bethesda III-V FNA categories. TSHR-mRNA may be used to exclude Bethesda IV disease. A large sample analysis is needed to determine its accuracy for Bethesda category III nodules. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Influence of carrier concentration on the performance of CIAS solar cell

    Science.gov (United States)

    Patel, Kinjal; Ray, Jaymin

    2018-05-01

    Photovoltaic research has moved beyond the use of single crystalline materials such as Group IV elemental Si and Group III-V compounds like GaAs to much more complex compounds of the Group I-III-VI2 with chalcopyrite structure. The ternary ABC2 chalcopyrites (A=Cu; B=In, Ga or Al; C= S, Se or Te) form a large group of semiconducting materials with diverse structural and electrical properties. These materials are attractive for thin film photovoltaic application for a number of reasons. The bandgap of CuInSe2 is relatively low, 1.04 eV, but it can be adjusted to better match the solar spectrum either by substituting part of In by Ga or part of Se by S. Most reported and popular Cu(In,Ga)Se2 (CIGS) is one of its derivative. Efficiency of the CIGS devices with Eg >1.3 eV is reduced by the degradation of the electronic properties of the absorber leading to losses in the fill-factor and the open-circuit voltage. Alternatively, the performance can be improved by the addition of Al to form CuInAlSe2 (CIAS) absorber layers with an increase in the bandgap energy, which matches closely with the solar spectrum. In the present work an effort was made in the direction of improving the conversion efficiency by studying the influence of carrier concentration. SCAPS simulation program is used to simulate the CIAS structure numerically. The obtained results intended the significant variation in the values of conversion efficiency. Variation in the efficiency can be considered because of the relation optical absorption and carrier concentration. Observed highest efficiency is 10 %, which can be further improved by considering actual parameters of the device as well as the operating condition.

  2. Crystallization features of ternary reversible reciprocal systems

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Shcherbak, L.P.; Fejchuk, P.I.; Grytsiv, V.I.

    2006-01-01

    Some features of the primary crystallization of phases in ternary reversible reciprocal system are considered and discussed. The diagonal join CdTe-GeSe of the CdTe + GeSe = CdSe + GeTe ternary reciprocal system is studied to show that the features in primary and secondary heating and cooling curves in such systems under fully equilibrium conditions are not reproduced upon consecutive heating and cooling sessions, because of the existence of different amounts of the reagents and the reaction products in the mixture; the temperatures of each transformation lie in a range. Those who experimentally investigate other ternary and more complex reversible reciprocal systems should take this fact into account [ru

  3. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  4. Ternary fission induced by polarized neutrons

    Directory of Open Access Journals (Sweden)

    Gönnenwein Friedrich

    2013-12-01

    Full Text Available Ternary fission of (e,e U- and Pu- isotopes induced by cold polarized neutrons discloses some new facets of the process. In the so-called ROT effect shifts in the angular distributions of ternary particles relative to the fission fragments show up. In the so-called TRI effect an asymmetry in the emission of ternary particles relative to a plane formed by the fragment momentum and the spin of the neutron appear. The two effects are shown to be linked to the components of angular momentum perpendicular and parallel to the fission axis at the saddle point of fission. Based on theoretical models the spectroscopic properties of the collective transitional states at the saddle point are inferred from experiment.

  5. Solar cells based on InP/GaP/Si structure

    Science.gov (United States)

    Kvitsiani, O.; Laperashvil, D.; Laperashvili, T.; Mikelashvili, V.

    2016-10-01

    Solar cells (SCs) based on III-V semiconductors are reviewed. Presented work emphases on the Solar Cells containing Quantum Dots (QDs) for next-generation photovoltaics. In this work the method of fabrication of InP QDs on III-V semiconductors is investigated. The original method of electrochemical deposition of metals: indium (In), gallium (Ga) and of alloys (InGa) on the surface of gallium phosphide (GaP), and mechanism of formation of InP QDs on GaP surface is presented. The possibilities of application of InP/GaP/Si structure as SC are discussed, and the challenges arising is also considered.

  6. New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991

    Energy Technology Data Exchange (ETDEWEB)

    Lundstrom, M.S.; Melloch, M.R.; Lush, G.B.; O`Bradovich, G.J.; Young, M.P. [Purdue Univ., Lafayette, IN (United States)

    1993-01-01

    This report describes progress during the first year of a three-year project. The objective of the research is to examine new design approaches for achieving very high conversion efficiencies. The program is divided into two areas. The first centers on exploring new thin-film approaches specifically designed for III-V semiconductors. The second area centers on exploring design approaches for achieving high conversion efficiencies without requiring extremely high quality material. Research activities consisted of an experimental study of minority carrier recombination in n-type, metal-organic chemical vapor deposition (MOCVD)-deposited GaAs, an assessment of the minority carrier lifetimes in n-GaAs grown by molecular beam epitaxy, and developing a high-efficiency cell fabrication process.

  7. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  8. Ka-band to L-band frequency down-conversion based on III-V-on-silicon photonic integrated circuits

    Science.gov (United States)

    Van Gasse, K.; Wang, Z.; Uvin, S.; De Deckere, B.; Mariën, J.; Thomassen, L.; Roelkens, G.

    2017-12-01

    In this work, we present the design, simulation and characterization of a frequency down-converter based on III-V-on-silicon photonic integrated circuit technology. We first demonstrate the concept using commercial discrete components, after which we demonstrate frequency conversion using an integrated mode-locked laser and integrated modulator. In our experiments, five channels in the Ka-band (27.5-30 GHz) with 500 MHz bandwidth are down-converted to the L-band (1.5 GHz). The breadboard demonstration shows a conversion efficiency of - 20 dB and a flat response over the 500 MHz bandwidth. The simulation of a fully integrated circuit indicates that a positive conversion gain can be obtained on a millimeter-sized photonic integrated circuit.

  9. Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications.

    Science.gov (United States)

    Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Lee, Ho-Young; Lee, Seong Min; Cho, Seongjae; Kang, In Man

    2015-10-01

    In this work, we design and analyze complementary metal-oxide-semiconductor (CMOS)-compatible III-V compound electron-hole bilayer (EHB) tunneling field-effect transistors (TFETs) by using two-dimensional (2D) technology computer-aided design (TCAD) simulations. A recently proposed EHB TFET exploits a bias-induced band-to-band tunneling (BTBT) across the electron-hole bilayer by an electric field from the top and bottom gates. This is in contrast to conventional planar p(+)-p(-)-n TFETs, which utilize BTBT across the source-to-channel junction. We applied III-V compound semiconductor materials to the EHB TFETs in order to enhance the current drivability and switching performance. Devices based on various compound semiconductor materials have been designed and analyzed in terms of their primary DC characteristics. In addition, the operational principles were validated by close examination of the electron concentrations and energy-band diagrams under various operation conditions. The simulation results of the optimally designed In0.533Ga0.47As EHB TFET show outstanding performance, with an on-state current (Ion) of 249.5 μA/μm, subthreshold swing (S) of 11.4 mV/dec, and threshold voltage (Vth) of 50 mV at VDS = 0.5 V. Based on the DC-optimized InGaAs EHB TFET, the CMOS inverter circuit was simulated in views of static and dynamic behaviors of the p-channel device with exchanges between top and bottom gates or between source and drain electrodes maintaining the device structure.

  10. True ternary fission of 252Cf

    International Nuclear Information System (INIS)

    Vijayaraghavan, K.R.; Balasubramaniam, M.; Oertzen, W. von

    2014-01-01

    Splitting of heavy radioactive nucleus into three fragments is known as ternary fission. If the size of the fragments are almost equal it is referred to as true ternary fission. Recently, Yu. V. Pyatkov et al observed/reported the experimental observation of true ternary fission in 252 Cf. In this work, the possibilities of different true ternary fission modes of 252 Cf through potential energy surface (PES) calculations based on three cluster model (TCM) are discussed. In TCM a condition on the mass numbers of the fission fragments is implied as A 1 ≥ A 2 ≥ A 3 in order to avoid repetition of combinations. Due to this condition, the values of Z 3 vary from 0 to 36 and Z 2 vary from 16 to 51. Of the different pairs having similar (Z 2 , Z 3 ) with different potential energy, a pair possessing minimum potential energy is chosen. Thus identified favourable combinations are plotted. For the PES calculations the arrangement of the fragments is considered in the order of A 1 +A 2 +A 3 . i.e. the heavy and the lightest fragments are kept at the ends. It is seen that the deepest minimum in the PES occurs for Z 3 =2 labelled as (Z 2 ; 2) indicating He accompanied breakup as the most favourable one. Of which, the breakup with Z 2 around 46 to 48 is the least (shown by dashed (Z 1 = 50) and dotted (Z 1 = 52) lines indicating a constant Z 1 value). The other notable minima in the PES are labelled and they correspond to the (Z 2 , Z 3 ) pairs viz., (20, 20), (28, 20), (28, 28) and (32, 32). Of these four minima, the first three are associated with the magic numbers 20 and 28. For Z 3 =20, there are two minimums at (20,20) and (28,20) among them (28,20) is the lowest minimum through which the minimum-path passes, and it is the ternary decay observed by Yu. V. Pyatkov et al. The fourth minima is the most interesting due to the fact that it corresponds to true ternary fission mode with Z 2 =32, Z 3 =32 and Z 1 =34. The minimum potential energy path also goes through this true

  11. A Josephson ternary associative memory cell

    International Nuclear Information System (INIS)

    Morisue, M.; Suzuki, K.

    1989-01-01

    This paper describes a three-valued content addressable memory cell using a Josephson complementary ternary logic circuit named as JCTL. The memory cell proposed here can perform three operations of searching, writing and reading in ternary logic system. The principle of the memory circuit is illustrated in detail by using the threshold-characteristics of the JCTL. In order to investigate how a high performance operation can be achieved, computer simulations have been made. Simulation results show that the cycle time of memory operation is 120psec, power consumption is about 0.5 μW/cell and tolerances of writing and reading operation are +-15% and +-24%, respectively

  12. Ternary-fragmentation-driving potential energies of 252Cf

    Science.gov (United States)

    Karthikraj, C.; Ren, Zhongzhou

    2017-12-01

    Within the framework of a simple macroscopic model, the ternary-fragmentation-driving potential energies of 252Cf are studied. In this work, all possible ternary-fragment combinations of 252Cf are generated by the use of atomic mass evaluation-2016 (AME2016) data and these combinations are minimized by using a two-dimensional minimization approach. This minimization process can be done in two ways: (i) with respect to proton numbers (Z1, Z2, Z3) and (ii) with respect to neutron numbers (N1, N2, N3) of the ternary fragments. In this paper, the driving potential energies for the ternary breakup of 252Cf are presented for both the spherical and deformed as well as the proton-minimized and neutron-minimized ternary fragments. From the proton-minimized spherical ternary fragments, we have obtained different possible ternary configurations with a minimum driving potential, in particular, the experimental expectation of Sn + Ni + Ca ternary fragmentation. However, the neutron-minimized ternary fragments exhibit a driving potential minimum in the true-ternary-fission (TTF) region as well. Further, the Q -value energy systematics of the neutron-minimized ternary fragments show larger values for the TTF fragments. From this, we have concluded that the TTF region fragments with the least driving potential and high Q values have a strong possibility in the ternary fragmentation of 252Cf. Further, the role of ground-state deformations (β2, β3, β4, and β6) in the ternary breakup of 252Cf is also studied. The deformed ternary fragmentation, which involves Z3=12 -19 fragments, possesses the driving potential minimum due to the larger oblate deformations. We also found that the ground-state deformations, particularly β2, strongly influence the driving potential energies and play a major role in determining the most probable fragment combinations in the ternary breakup of 252Cf.

  13. Self-triggered coordination with ternary controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo

    2012-01-01

    This paper regards coordination of networked systems with ternary controllers. We develop a hybrid coordination system which implements a self-triggered communication policy, based on polling the neighbors upon need. We prove that the proposed scheme ensures finite-time convergence to a neighborhood

  14. Ternary gradient metal-organic frameworks.

    Science.gov (United States)

    Liu, Chong; Rosi, Nathaniel L

    2017-09-08

    Gradient MOFs contain directional gradients of either structure or functionality. We have successfully prepared two ternary gradient MOFs based on bMOF-100 analogues, namely bMOF-100/102/106 and bMOF-110/100/102, via cascade ligand exchange reactions. The cubic unit cell parameter discrepancy within an individual ternary gradient MOF crystal is as large as ∼1 nm, demonstrating the impressive compatibility and flexibility of the component MOF materials. Because of the presence of a continuum of unit cells, the pore diameters within individual crystals also change in a gradient fashion from ∼2.5 nm to ∼3.0 nm for bMOF-100/102/106, and from ∼2.2 nm to ∼2.7 nm for bMOF-110/100/102, indicating significant porosity gradients. Like previously reported binary gradient MOFs, the composition of the ternary gradient MOFs can be easily controlled by adjusting the reaction conditions. Finally, X-ray diffraction and microspectrophotometry were used to analyse fractured gradient MOF crystals by comparing unit cell parameters and absorbance spectra at different locations, thus revealing the profile of heterogeneity (i.e. gradient distribution of properties) and further confirming the formation of ternary gradient MOFs.

  15. TERNARY ALLOYS OF URANIUM, COLUMBIUM, AND ZIRCONIUM

    Science.gov (United States)

    Foote, F.G.

    1960-08-01

    Ternary alloys of uranium are described which are useful as neutron- reflecting materials in a fast neutron reactor. They are especially resistant to corrosion caused by oxidative processes of gascous or aqueous origin and comprise uranium as the predominant metal with zirconiunn and niobium wherein the total content of the minor alloying elements is between 2 and 8% by weight.

  16. Does Science Also Prefer a Ternary Pattern?

    Science.gov (United States)

    Pogliani, L.; Klein, D. J.; Balaban, A. T.

    2006-01-01

    Through the importance of the number three in our culture and the strange preference for a ternary pattern of our nature one can perceive how and why number theory degraded to numerology. The strong preference of our minds for simple patterns can be read as the key to understanding not only the development of numerology, but also why scientists…

  17. Angular distribution in ternary cold fission

    International Nuclear Information System (INIS)

    Delion, D.S.; J.W. Goethe Univ., Frankfurt; Sandulescu, A.; J.W. Goethe Univ., Frankfurt; Greiner, W.

    2003-01-01

    We describe the spontaneous ternary cold fission of 252 Cf, accompanied by 4 He, 10 Be and 14 C. The light cluster decays from the first resonant eigenstate in the Coulomb potential plus a harmonic oscillator potential. We have shown that the angular distribution of the emitted light particle is strongly connected with its deformation and the equatorial distance. (author)

  18. Superconducting state parameters of ternary metallic glasses

    Indian Academy of Sciences (India)

    Administrator

    to binary metallic glasses. They are of interest since third element can modify the physical properties of binary metallic glasses and can also be used as a probe to study the host. ..... conducting nature in the present case. When we. Figure 6. Variation of transition temperature (TC) with valance (Z) of ternary metallic glasses.

  19. Reflectance properties of one-dimensional metal-dielectric ternary photonic crystal

    Energy Technology Data Exchange (ETDEWEB)

    Pandey, G. N., E-mail: gnpandey2009@gmail.com [Department of Physics, Amity Institute of Applied Sciences, AmityUniversity, Noida (U.P.) (India); Kumar, Narendra [Department of Physics (CASH), Modi University of Science and Technology, Lakshmangarh, Sikar, Rajsthan (India); Thapa, Khem B. [Department of Physics, U I E T, ChhatrapatiShahu Ji Maharaj University, Kanpur- (UP) (India); Ojha, S. P. [Department of Physics IIT, Banaras Hindu University (India)

    2016-05-06

    Metallic photonic crystal has a very important application in absorption enhancement in solar cells. It has been found that an ultra-thin metallic layer becomes transparent due to internal scattering of light through the each interface of the dielectric and metal surfaces. The metal has absorption due to their surface plasmon and the plasmon has important parameters for changing optical properties of the metal. We consider ternary metallic-dielectric photonic crystal (MDPC) for having large probabilities to change the optical properties of the MDPC and the photonic crystals may be changed by changing dimensionality, symmetry, lattice parameters, Filling fraction and effective refractive index refractive index contrast. In this present communication, we try to show that the photonic band gap in ternary metal-dielectric photonic crystal can be significantly enlarged when air dielectric constant is considered. All the theoretical analyses are made based on the transfer matrix method together with the Drude model of metal.

  20. Design of a novel quantum reversible ternary up-counter

    Science.gov (United States)

    Houshmand, Pouran; Haghparast, Majid

    2015-08-01

    Reversible logic has been recently considered as an interesting and important issue in designing combinational and sequential circuits. The combination of reversible logic and multi-valued logic can improve power dissipation, time and space utilization rate of designed circuits. Only few works have been reported about sequential reversible circuits and almost there are no paper exhibited about quantum ternary reversible counter. In this paper, first we designed 2-qutrit and 3-qutrit quantum reversible ternary up-counters using quantum ternary reversible T-flip-flop and quantum reversible ternary gates. Then we proposed generalized quantum reversible ternary n-qutrit up-counter. We also introduced a new approach for designing any type of n-qutrit ternary and reversible counter. According to the results, we can conclude that applying second approach quantum reversible ternary up-counter is better than the others.

  1. Nanomaterials for solar energy

    KAUST Repository

    Revaprasadu, Neerish

    2013-01-01

    Nanostructured metal chalcogenides of the elements copper, iron, tin, lead and cadmium have attracted interest in their use as colloidal nanocrystal inks for solar cells. Some of these materials have the advantages of being available in abundance and having low toxicity. Developing methods for the combination of the elements to produce binary, ternary and quaternary compounds has dominated research in the field. This chapter will provide the most recent developments (from year 2012 onwards) for the synthesis and use of colloidal nanocrystal inks for solar cell applications. © The Royal Society of Chemistry 2014.

  2. The ternary system nickel-nobium-carbon

    International Nuclear Information System (INIS)

    Stadelmaier, H.H.; Fiedler, M.L.

    1975-01-01

    The ternary system nickel-niobium-carbon was studied by metallographic and X-ray diffraction methods to produce a liquidus projection and an isothermal section at 1,100 0 C. The liquidus projection is dominated by a wide field of primary NbC that extends far into the nickel corner of the composition triangle. Only one ternary compound is observed in this system, an eta-carbide formed in a peritectoid reaction. It has a narrow homogeneity range at Ni 2 Nb 4 C, and its lattice constant in alloys quenched from 1,100 0 C varies between 11.659 and 11.667 A. No eta-carbide Ni 3 Nb 3 C or Ni 6 Nb 6 could be detected. (orig.) [de

  3. “Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong

    2016-01-01

    Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

  4. Equilibrium study for ternary mixtures of biodiesel

    Science.gov (United States)

    Doungsri, S.; Sookkumnerd, T.; Wongkoblap, A.; Nuchitprasittichai, A.

    2017-11-01

    The liquid-liquid equilibrium (LLE) data for the ternary mixtures of methanol + fatty acid methyl ester (FAME) + palm oil and FAME + palm oil + glycerol at various temperatures from 35 to 55°C, the tie lines and binodial curves were also investigated and plotted in the equilibrium curve. The experimental results showed that the binodial curves of methanol + FAME + palm oil depended significantly with temperature while the binodial curves of FAME + palm oil + glycerol illustrated insignificant change with temperatures. The interaction parameters between liquid pair obtained for NRTL (Nonrandom Two-Liquid) and UNIQUAC (Universal Quasi-Chemical Theory) models from the experimental data were also investigated. It was found that the correlated parameters of UNIQUAC model for system of FAME + palm oil + glycerol, denoted as a13 and a31, were 580.42K and -123.69K, respectively, while those for system of methanol + FAME + palm oil, denoted as a42 and a24, were 71.48 K and 965.57K, respectively. The ternary LLE data reported here would be beneficial for engineers and scientists to use for prediction of yield and purity of biodiesel for the production. The UNIQUAC model agreed well with the experimental data of ternary mixtures of biodiesel.

  5. Design of ternary clocked adiabatic static random access memory

    International Nuclear Information System (INIS)

    Wang Pengjun; Mei Fengna

    2011-01-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions. (semiconductor integrated circuits)

  6. Design of ternary clocked adiabatic static random access memory

    Science.gov (United States)

    Pengjun, Wang; Fengna, Mei

    2011-10-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

  7. First principle study of UHTC ternary diboride, Cr2AlB2

    Science.gov (United States)

    Rastogi, Anugya; Rajpoot, Priyanka; Verma, U. P.

    2018-04-01

    In this paper ab-initio study of the structural, electronic and optical properties of ternary metal boride Cr2AlB2 using full potential linear augmented plane wave (FP-LAPW) method based on the density functional theory (DFT). The study of structural properties shows that Cr2AlB2 is metallic in nature and have orthorhombic crystal structure. The optical properties show that it possess anisotropic behavior, which have wide applications in electricity production through concentration of solar power (CSP) technology. To the best of our knowledge, theoretical study of the optical properties of Cr2AlB2 is reported for the first time.

  8. Ternary q-Virasoro-Witt Hom-Nambu-Lie algebras

    International Nuclear Information System (INIS)

    Ammar, F; Makhlouf, A; Silvestrov, S

    2010-01-01

    In this paper we construct ternary q-Virasoro-Witt algebras which q-deform the ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos using su(1, 1) enveloping algebra techniques. The ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos depend on a parameter and are not Nambu-Lie algebras for all but finitely many values of this parameter. For the parameter values for which the ternary Virasoro-Witt algebras are Nambu-Lie, the corresponding ternary q-Virasoro-Witt algebras constructed in this paper are also Hom-Nambu-Lie because they are obtained from the ternary Nambu-Lie algebras using the composition method. For other parameter values this composition method does not yield a Hom-Nambu-Lie algebra structure for q-Virasoro-Witt algebras. We show however, using a different construction, that the ternary Virasoro-Witt algebras of Curtright, Fairlie and Zachos, as well as the general ternary q-Virasoro-Witt algebras we construct, carry a structure of the ternary Hom-Nambu-Lie algebra for all values of the involved parameters.

  9. Description of light charged particle emission in ternary fission

    International Nuclear Information System (INIS)

    Andreev, A. V.; Adamian, G. G.; Antonenko, N. V.; Kuklin, S. N.; Scheid, W.

    2010-01-01

    We consider the motion of three fragments starting from the scission point of ternary system. In the alpha-accompanied ternary fission the initial conditions are not the free parameters and determined by minimization of potential energy at scission point. In the trajectory calculations the angular distribution and mean value of the kinetic energy of the alpha-particles are well described in the spontaneous ternary fission of 252 Cf. In the Be- and C-accompanied ternary fission we found that the emission of the third particle occurs from one of the heavy fragments after their separation. (authors)

  10. Role of ternary fission in synthesis of bypassed nuclei

    International Nuclear Information System (INIS)

    Kramarovskij, Ya.M.; Chechev, V.P.

    1983-01-01

    A possible influence of ternary fission with escape of neutron-enriched light charged particles on the synthesis of bypassed nuclides is considered. It is shown that this concept cannot give explanation of bypassed isotope concentrations, but it can make some contribution, if the probability of ternary fission for superheavy nuclei grows sharply with Z 2 /A parameter. The account of β-delayed fission contributes to the shift of ternary fission fragments into the region of neutron-deficient isotopes. Consistent consideration of the ternary fission role in the nucleosynthesis is possible only with an important accumulation of experimental and theoretical data on this process, particularly for the nuclei with Z > 100

  11. Fusibility diagram of ternary system with incongruently melting double compound

    International Nuclear Information System (INIS)

    Lutsyk, V.I.; Vorob'eva, V.P.; Sumkina, O.G.

    1989-01-01

    Temperature calculation and properties of ternary eutectics and concentration coordinates of ternary peritectics accoriding to the linear model of initial crystallization surfaces as an element of the expert system for simulating fusibility diagrams of ternary systems is considered. It is shown that the calculated and experimental data on coordinates of ternary nonvariant points in the systems NaCl-PbCl 2 -CdCl 2 , PbCl 2 -CaCl 2 -UCl 4 , CaF 2 -NaF-CsF and UCl 3 -CaCl 2 -ThCl 4 are in good agreement

  12. Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

    International Nuclear Information System (INIS)

    Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

    2004-01-01

    Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

  13. A review of recent progress in heterogeneous silicon tandem solar cells

    Science.gov (United States)

    Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

    2018-04-01

    Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

  14. Neutron Damage and MAX Phase Ternary Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Barsoum, Michael [Drexel Univ., Philadelphia, PA (United States); Hoffman, Elizabeth [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Sindelar, Robert [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Garcua-Duaz, Brenda [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Kohse, Gordon [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2014-06-17

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  15. Neutron Damage and MAX Phase Ternary Compounds

    International Nuclear Information System (INIS)

    Barsoum, Michael; Hoffman, Elizabeth; Sindelar, Robert; Garcua-Diaz, Brenda; Kohse, Gordon

    2014-01-01

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  16. Embedding complete ternary tree in hypercubes using AVL trees

    NARCIS (Netherlands)

    S.A. Choudum; I. Raman (Indhumathi)

    2008-01-01

    htmlabstractA complete ternary tree is a tree in which every non-leaf vertex has exactly three children. We prove that a complete ternary tree of height h, TTh, is embeddable in a hypercube of dimension . This result coincides with the result of [2]. However, in this paper, the embedding utilizes

  17. Thermodynamic modeling of the Ti-Al-Cr ternary system

    International Nuclear Information System (INIS)

    Chen Leyi; Qiu Aitao; Liu Lanjie; Jiang Ming; Lu Xionggang; Li Chonghe

    2011-01-01

    Research highlights: → The full experimental results of the Ti-Al-Cr ternary system and its sub-binary systems are reviewed and analysed in detail. → Based on the latest thermodynamic assessments of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the thermodynamic parameters of the Ti-Al-Cr ternary system are fully assessed by the Calphad method. → The transformation of disorder to order (bcc a 2 to B2) and the new ternary compound L 12T i 25 Cr 8 Al 67 are considered in this work. - Abstract: The Ti-Al-Cr ternary system is one of the most important systems to studying the titanium alloys. Some experimental data of this ternary system are available and a few partial thermodynamic assessments are reported. However, no full thermodynamic descriptions were published. In this study, the previous work on the Ti-Al-Cr system and its related binary systems are reviewed. Based on the thermodynamic descriptions of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the Ti-Al-Cr ternary system is assessed by means of the Calphad method. Several isothermal sections from 1073 K to 1573 K and some invariant reactions are calculated, which are in good agreement with the most of the experimental results.

  18. Density-Driven segregation in Binary and Ternary Granular Systems

    NARCIS (Netherlands)

    Windows-Yule, Kit; Parker, David

    2015-01-01

    We present a first experimental study of density-induced segregation within a three-dimensional, vibrofluidised, ternary granular system. Using Positron Emission Particle Tracking (PEPT), we study the steady-state particle distributions achieved by binary and ternary granular beds under a variety of

  19. Calculation of ternary interdiffusion coefficients using a single diffusion couple

    Czech Academy of Sciences Publication Activity Database

    Čermák, Jiří; Rothová, Věra

    2016-01-01

    Roč. 54, č. 5 (2016), s. 305-314 ISSN 0023-432X R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : diffusion * interdiffusion * ternary alloys * ternary diffusion coefficients Subject RIV: BJ - Thermodynamics Impact factor: 0.366, year: 2016

  20. A high-speed interconnect network using ternary logic

    DEFF Research Database (Denmark)

    Madsen, Jens Kargaard; Long, S. I.

    1995-01-01

    This paper describes the design and implementation of a high-speed interconnect network (ICN) for a multiprocessor system using ternary logic. By using ternary logic and a fast point-to-point communication technique called STARI (Self-Timed At Receiver's Input), the communication between...

  1. Symmetric weak ternary quantum homomorphic encryption schemes

    Science.gov (United States)

    Wang, Yuqi; She, Kun; Luo, Qingbin; Yang, Fan; Zhao, Chao

    2016-03-01

    Based on a ternary quantum logic circuit, four symmetric weak ternary quantum homomorphic encryption (QHE) schemes were proposed. First, for a one-qutrit rotation gate, a QHE scheme was constructed. Second, in view of the synthesis of a general 3 × 3 unitary transformation, another one-qutrit QHE scheme was proposed. Third, according to the one-qutrit scheme, the two-qutrit QHE scheme about generalized controlled X (GCX(m,n)) gate was constructed and further generalized to the n-qutrit unitary matrix case. Finally, the security of these schemes was analyzed in two respects. It can be concluded that the attacker can correctly guess the encryption key with a maximum probability pk = 1/33n, thus it can better protect the privacy of users’ data. Moreover, these schemes can be well integrated into the future quantum remote server architecture, and thus the computational security of the users’ private quantum information can be well protected in a distributed computing environment.

  2. Nanoscratching of nylon 66-based ternary nanocomposites

    International Nuclear Information System (INIS)

    Dasari, Aravind; Yu Zhongzhen; Mai Yiuwing

    2007-01-01

    The nanoscratch behavior of nylon 66/SEBS-g-MA/clay ternary nanocomposites produced by different blending protocols with contrasting microstructures is studied by using atomic force and transmission electron microscopy. A standard diamond Berkovich indenter is used for scratching and a low load of 1 mN, along with a low sliding velocity of 1 μm s -1 , are employed for this purpose. It is shown that in order to resist penetration it is more important to have exfoliated clay in the continuous nylon matrix during nanoscratching than to have the clay in the dispersed soft rubber domains. The results obtained also explain the preferred usage of ternary nanocomposites compared to binary nanocomposites, particularly nylon 66/exfoliated clay nanocomposites. This research extends current basic knowledge and provides new insights on the nature of nanoscale processes that occur during nanoscratching of polymer nanocomposites. Critical questions are raised on the relationships between the penetration depth and material deformation and damage left behind the moving indenter

  3. Irregular Homogeneity Domains in Ternary Intermetallic Systems

    Directory of Open Access Journals (Sweden)

    Jean-Marc Joubert

    2015-12-01

    Full Text Available Ternary intermetallic A–B–C systems sometimes have unexpected behaviors. The present paper examines situations in which there is a tendency to simultaneously form the compounds ABx, ACx and BCx with the same crystal structure. This causes irregular shapes of the phase homogeneity domains and, from a structural point of view, a complete reversal of site occupancies for the B atom when crossing the homogeneity domain. This work reviews previous studies done in the systems Fe–Nb–Zr, Hf–Mo–Re, Hf–Re–W, Mo–Re–Zr, Re–W–Zr, Cr–Mn–Si, Cr–Mo–Re, and Mo–Ni–Re, and involving the topologically close-packed Laves, χ and σ phases. These systems have been studied using ternary isothermal section determination, DFT calculations, site occupancy measurement using joint X-ray, and neutron diffraction Rietveld refinement. Conclusions are drawn concerning this phenomenon. The paper also reports new experimental or calculated data on Co–Cr–Re and Fe–Nb–Zr systems.

  4. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  5. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    Science.gov (United States)

    Marchewka, M.; Woźny, M.; Polit, J.; Kisiel, A.; Robouch, B. V.; Marcelli, A.; Sheregii, E. M.

    2014-03-01

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III-V and II-VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra.

  6. Evaluation of Novel Semiconductor Materials Potentially Useful in Solar Cells: Cooperative Research and Development Final Report, CRADA number CRD-06-00172

    Energy Technology Data Exchange (ETDEWEB)

    Geisz, J.

    2010-07-01

    Evaluation of novel semiconductor materials potentially useful in solar cells. NREL will fabricate, test and analyze solar cells from EpiWorks' wafers produced in 2-3 separate growth campaigns. NREL will also characterize material from 2-3 separate EpiWorks material development campaigns. Finally, NREL will visit EpiWorks and help establish any necessary process, such as spectral CV measurements and III-V on Si metalization processes and help validate solar cell designs and performance.

  7. NiS and MoS2 nanosheet co-modified graphitic C3N4 ternary heterostructure for high efficient visible light photodegradation of antibiotic.

    Science.gov (United States)

    Lu, Xuejun; Wang, Yu; Zhang, Xinyi; Xu, Guangqing; Wang, Dongmei; Lv, Jun; Zheng, Zhixiang; Wu, Yucheng

    2018-01-05

    The development of efficient solar driven catalytic system for the degradation of antibiotics has become increasingly important in environmental protection and remediation. Non-noble-metal NiS and MoS 2 nanosheet co-modified graphitic C 3 N 4 ternary heterostructure has been synthesized via a facile combination of hydrothermal and ultrasound method, and the ternary heterostructure has been utilized for photocatalytic degradation of antibiotic agents. The antibiotics of ciprofloxacin (CIP) and tetracycline hydrochloride (TC) were photodegraded by the hybrid under the visible light. The optimal photodegradation rate of the ternary heterostructure reaches about 96% after 2h irradiation, which is 2.1 times higher than that of pure g-C 3 N 4 for TC degradation. The photocatalytic degradation rates of the ternary heterostructure for both CIP and TC obey the pseudo-first-order kinetic model. The enhanced visible light adsorption and charge separation efficiency contribute to the photocatalytic performance of the ternary heterostructure. This work provides new insights and pathways by which efficient degradation of antibiotics can be achieved and will stimulate further studies in this important field. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

    2017-10-02

    Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

  9. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  10. Ternary particle yields in 249Cf(nth,f)

    Science.gov (United States)

    Tsekhanovich, I.; Büyükmumcu, Z.; Davi, M.; Denschlag, H. O.; Gönnenwein, F.; Boulyga, S. F.

    2003-03-01

    An experiment measuring ternary particle yields in 249Cf(nth,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37Si and 37S; their possible origin is discussed.

  11. Ternary particle yields in 249Cf(nth,f)

    International Nuclear Information System (INIS)

    Tsekhanovich, I.; Bueyuekmumcu, Z.; Davi, M.; Denschlag, H.O.; Goennenwein, F.; Boulyga, S.F.

    2003-01-01

    An experiment measuring ternary particle yields in 249 Cf(n th ,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30 Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37 Si and 37 S; their possible origin is discussed

  12. A Three-dimensional Topological Model of Ternary Phase Diagram

    International Nuclear Information System (INIS)

    Mu, Yingxue; Bao, Hong

    2017-01-01

    In order to obtain a visualization of the complex internal structure of ternary phase diagram, the paper realized a three-dimensional topology model of ternary phase diagram with the designed data structure and improved algorithm, under the guidance of relevant theories of computer graphics. The purpose of the model is mainly to analyze the relationship between each phase region of a ternary phase diagram. The model not only obtain isothermal section graph at any temperature, but also extract a particular phase region in which users are interested. (paper)

  13. Speeds of sound and isothermal compressibility of ternary liquid ...

    Indian Academy of Sciences (India)

    Thermo-acoustics Research Lab, Department of Chemistry, University of Allahabad,. Allahabad 211 002, India ... compressibility data of these industrially important organic compounds of ternary and higher liquid ... distillation. Densities and ...

  14. Kinetic study of lithium-cadmium ternary amalgam decomposition

    International Nuclear Information System (INIS)

    Cordova, M.H.; Andrade, C.E.

    1992-01-01

    The effect of metals, which form stable lithium phase in binary alloys, on the formation of intermetallic species in ternary amalgams and their effect on thermal decomposition in contact with water is analyzed. Cd is selected as ternary metal, based on general experimental selection criteria. Cd (Hg) binary amalgams are prepared by direct contact Cd-Hg, whereas Li is formed by electrolysis of Li OH aq using a liquid Cd (Hg) cathodic well. The decomposition kinetic of Li C(Hg) in contact with 0.6 M Li OH is studied in function of ageing and temperature, and these results are compared with the binary amalgam Li (Hg) decomposition. The decomposition rate is constant during one hour for binary and ternary systems. Ageing does not affect the binary systems but increases the decomposition activation energy of ternary systems. A reaction mechanism that considers an intermetallic specie participating in the activated complex is proposed and a kinetic law is suggested. (author)

  15. Ternary complex formation at mineral/solution interfaces

    International Nuclear Information System (INIS)

    Leckie, J.O.

    1995-01-01

    Adsorption of trace concentrations of radionuclides and heavy metals from aqueous solution is dependent on pH, absorbent and adsorbate concentration, and speciation of the metal in solution. In particular, complexation of metal ions by organic and inorganic ligands can dramatically alter adsorption behavior compared to ligand-free systems. The presence of complexing ligands can cause the formation of ''metal like'' or ''ligand like'' ternary surface complexes depending on whether adsorption of the ternary complex increases or decreases with increasing pH, respectively. Examples of ternary surface complexes behaving ''metal like'' include uranyl-EDTA surface complexes on goethite, neptunyl-EDTA surface complexes on hematite and neptunyl-humic surface complexes on gibbsite. Examples of ''ligand like'' ternary surface complexes include uranyl-carbonato and neptunyl-carbonato surface complexes on iron oxides. The effects of complex solutions and multimineralic systems are discussed. (authors). 39 refs., 16 figs., 8 tabs

  16. Positron annihilation lifetime study of interfaces in ternary polymer blends

    International Nuclear Information System (INIS)

    Meghala, D; Ramya, P; Pasang, T; Raj, J M; Ranganathaiah, C; Williams, J F

    2013-01-01

    A new method based on positron lifetime spectroscopy is developed to characterize individual interfaces in ternary polymer blends and hence determine the composition dependent miscibility level. The method owes its origin to the Kirkwood-Risemann-Zimm (KRZ) model for the evaluation of the hydrodynamic interaction parameters (α ij ) which was used successfully for a binary blend with a single interface. The model was revised for the present work for ternary polymer blends to account for three interfaces. The efficacy of this method is shown for two ternary blends namely poly(styrene-co-acrylonitrile)/poly (ethylene-co-vinylacetate)/poly(vinyl chloride) (SAN/EVA/PVC) and polycaprolactone /poly(styrene-co-acrylonitrile)/poly(vinyl chloride) (PCL/SAN/PVC) at different compositions. An effective hydrodynamic interaction parameter, α eff , was introduced to predict the overall miscibility of ternary blends.

  17. Tricolore. A flexible color scale for ternary compositions

    DEFF Research Database (Denmark)

    2018-01-01

    tricolore is an R library providing a flexible color scale for the visualization of three-part/ternary compositions. Its main functionality is to color-code any ternary composition as a mixture of three primary colours and to draw a suitable color-key. tricolore flexibly adapts to different...... visualisation challenges via - discrete and continuous color support - support for unbalanced compositional data via centering - support for data with very narrow range via scaling - hue, chroma and lightness options...

  18. Analytical determination of distillation boundaries for ternary azeotropic systems

    OpenAIRE

    Marcilla Gomis, Antonio; Reyes Labarta, Juan Antonio; Velasco, Raúl; Serrano Cayuelas, María Dolores; Olaya López, María del Mar

    2009-01-01

    A new straight forward algorithm to calculate distillation boundaries in ternary azeotropic systems has been developed. The proposed method allows, using cubic splines, the calculation of distillation trajectories and the calculation of that corresponding to the searched distillation boundaries. The algorithm is applied to 4 ternary liquid-vapour systems to test its validity. Vicepresidency of Research (University of Alicante) and Generalitat Valenciana (GV/2007/125)

  19. Charge distribution in the ternary fragmentation of {sup 252}Cf

    Energy Technology Data Exchange (ETDEWEB)

    Senthil Kannan, M.T.; Balasubramaniam, M. [Bharathiar University, Department of Physics, Coimbatore (India)

    2017-08-15

    We present here, for the first time, a study on ternary fragmentation charge distribution of {sup 252}Cf using the convolution integral method and the statistical theory. The charge distribution for all possible charge combinations of a ternary breakup are grouped as a bin containing different mass partitions. Different bins corresponding to various third fragments with mass numbers from A{sub 3} = 16 to 84 are identified with the available experimental masses. The corresponding potential energy surfaces are calculated using the three cluster model for the two arrangements A{sub 1} + A{sub 2} + A{sub 3} and A{sub 1} + A{sub 3} + A{sub 2}. The ternary fragmentation yield values are calculated for the ternary combination from each bin possessing minimum potential energy. The yields of the resulting ternary combinations as a function of the charge numbers of the three fragments are analyzed for both the arrangements. The calculations are carried out at different excitation energies of the parent nucleus. For each excitation energy the temperature of the three fragments are iteratively computed conserving the total energy. The distribution of fragment temperatures corresponding to different excitation energies for some fixed third fragments are discussed. The presence of the closed shell nucleus Sn in the favourable ternary fragmentation is highlighted. (orig.)

  20. Impact of ternary blends of biodiesel on diesel engine performance

    Directory of Open Access Journals (Sweden)

    Prem Kumar

    2016-06-01

    Full Text Available The Pongamia and waste cooking oils are the main non edible oils for biodiesel production in India. The aim of the present work is to evaluate the fuel properties and investigate the impact on engine performance using Pongamia and waste cooking biodiesel and their ternary blend with diesel. The investigation of the fuel properties shows that Pongamia biodiesel and waste cooking biodiesel have poor cold flow property. This will lead to starting problem in the engine operation. To overcome this problem the ternary blends of diesel, waste cooking biodiesel and Pongamia biodiesel are prepared. The cloud and pour point for ternary blend, (WCB20:PB20:D60 were found to be 7 °C and 6.5 °C which are comparable to cloud and pour point of diesel 6 °C and 5 °C, respectively. The result of the test showed that brake specific fuel consumption for Pongamia biodiesel and waste cooking biodiesel is higher than ternary blend, (WCB20:PB20:D60 due to their lower energy content. The brake thermal efficiency of ternary blend and diesel is comparable while the Pongamia and waste cooking biodiesel have low efficiency. The result of investigation showed that ternary blend can be developed as alternate fuel.

  1. Maxwell-Stefan diffusion coefficient estimation for ternary systems: an ideal ternary alcohol system.

    Science.gov (United States)

    Allie-Ebrahim, Tariq; Zhu, Qingyu; Bräuer, Pierre; Moggridge, Geoff D; D'Agostino, Carmine

    2017-06-21

    The Maxwell-Stefan model is a popular diffusion model originally developed to model diffusion of gases, which can be considered thermodynamically ideal mixtures, although its application has been extended to model diffusion in non-ideal liquid mixtures as well. A drawback of the model is that it requires the Maxwell-Stefan diffusion coefficients, which are not based on measurable quantities but they have to be estimated. As a result, numerous estimation methods, such as the Darken model, have been proposed to estimate these diffusion coefficients. However, the Darken model was derived, and is only well defined, for binary systems. This model has been extended to ternary systems according to two proposed forms, one by R. Krishna and J. M. van Baten, Ind. Eng. Chem. Res., 2005, 44, 6939-6947 and the other by X. Liu, T. J. H. Vlugt and A. Bardow, Ind. Eng. Chem. Res., 2011, 50, 10350-10358. In this paper, the two forms have been analysed against the ideal ternary system of methanol/butan-1-ol/propan-1-ol and using experimental values of self-diffusion coefficients. In particular, using pulsed gradient stimulated echo nuclear magnetic resonance (PGSTE-NMR) we have measured the self-diffusion coefficients in various methanol/butan-1-ol/propan-1-ol mixtures. The experimental values of self-diffusion coefficients were then used as the input data required for the Darken model. The predictions of the two proposed multicomponent forms of this model were then compared to experimental values of mutual diffusion coefficients for the ideal alcohol ternary system. This experimental-based approach showed that the Liu's model gives better predictions compared to that of Krishna and van Baten, although it was only accurate to within 26%. Nonetheless, the multicomponent Darken model in conjunction with self-diffusion measurements from PGSTE-NMR represents an attractive method for a rapid estimation of mutual diffusion in multicomponent systems, especially when compared to exhaustive

  2. Binary and ternary photofission of thorium 232

    Energy Technology Data Exchange (ETDEWEB)

    Titterton, E W; Brinkley, T A

    1950-05-01

    Work by Titterton and Goward (1949) has shown that uranium undergoes photofission into three charged fragments. Experiments have been conducted to determine whether a similar process takes place in the photofission of thorium. Some difficulties were encountered in loading plates with /sup 232/Th atoms, but this was finally accomplished by means of a technique described in detail. Plates loaded by this method were irradiated with a continuous spectrum of ..gamma.. rays of maximum energy 24 MeV from the (Atomic Energy Research Establishment) Synchrotron. Three irradiations, of 100, 150, and 180 r, were made and the resulting plates showed a fission density of 2.5 x 10/sup 4//cc at the 150 r level. In an examination involving 2500 binary photofissions, 5 cases of ternary fission involving the emission of a long range light fragment, probably an ..cap alpha..-particle, were observed. These events are described. A number-range curve was determined for the photofission tracks and is compared with a similar curve for tracks formed by the slow neutron fission of /sup 235/U in a D/sub 1/ emulsion under conditions of similar emulsion sensitivity. It appears that the energy release in the photofission of /sup 232/Th is smaller than that in the slow neutron fission of /sup 235/U. The data indicate that 124 MeV is the mean kinetic energy released in the photofission of /sup 232/Th.

  3. Anisotropy in the ternary cold fission

    CERN Document Server

    Delion, D S; Greiner, W

    2003-01-01

    We describe the spontaneous ternary cold fission of sup 2 sup 5 sup 2 Cf, accompanied by sup 4 He, sup 1 sup 0 Be and sup 1 sup 4 C within a stationary scattering formalism. We show that the light cluster should be born in the neck region. It decays from the first resonant eigenstate in the Coulomb plus harmonic oscillator potential, centred in this region and eccentric with respect to the symmetry axis. This description gives a simple answer to the question why the averaged values in the energy spectra of emitted clusters are close to each other, in spite of different Coulomb barriers. We have shown that the angular distribution of the emitted light particle is strongly connected with its deformation and the equatorial distance. Experimental angular distributions can be explained by the spherical shapes of emitted clusters, except for a deformed sup 1 sup 0 Be. We also predicted some dependences of half-lives for such tri-nuclear systems upon potential parameters.

  4. Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations.

    Science.gov (United States)

    Afzalian, A; Vasen, T; Ramvall, P; Shen, T-M; Wu, J; Passlack, M

    2018-06-27

    We report the capability to simulate in a quantum-mechanical atomistic fashion record-large nanowire devices, featuring several hundred to millions of atoms and a diameter up to 18.2 nm. We have employed a tight-binding mode-space NEGF technique demonstrating by far the fastest (up to 10 000  ×  faster) but accurate (error  <  1%) atomistic simulations to date. Such technique and capability opens new avenues to explore and understand the physics of nanoscale and mesoscopic devices dominated by quantum effects. In particular, our method addresses in an unprecedented way the technologically-relevant case of band-to-band tunneling (BTBT) in III-V nanowire broken-gap heterojunction tunnel-FETs (HTFETs). We demonstrate an accurate match of simulated BTBT currents to experimental measurements in a 12 nm diameter InAs NW and in an InAs/GaSb Esaki tunneling diode. We apply our TB MS simulations and report the first in-depth atomistic study of the scaling potential of III-V GAA nanowire HTFETs including the effect of electron-phonon scattering and discrete dopant impurity band tails, quantifying the benefits of this technology for low-power low-voltage CMOS applications.

  5. InP solar cell with window layer

    Science.gov (United States)

    Jain, Raj K. (Inventor); Landis, Geoffrey A. (Inventor)

    1994-01-01

    The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

  6. NREL, CSEM Jointly Set New Efficiency Record with Dual-Junction Solar Cell

    Energy Technology Data Exchange (ETDEWEB)

    2016-01-01

    Scientists set a new world record for converting non-concentrated sunlight into electricity using a dual-junction III-V/Si solar cell. National Renewable Energy Laboratory (NREL) and Swiss Center for Electronics and Microtechnology (CSEM) scientists have collaborated to create a novel tandem solar cell that operates at 29.8% conversion efficiency under non-concentrator (1-sun) conditions. In comparison, the 1-sun efficiency of a silicon (Si) single-junction solar cell is probably still a few years away from converging on its practical limit of about 26%.

  7. Constitution of the ternary system Cr–Ni–Ti

    International Nuclear Information System (INIS)

    Krendelsberger, Natalja; Weitzer, Franz; Du, Yong; Schuster, Julius C.

    2013-01-01

    Highlights: •Reaction scheme and liquidus surface for Cr-Ni-Ti are given. •In the ternary the C14-type Laves phase coexists with the liquid phase. •Two ternary eutectics are identified. -- Abstract: The nature of solid–liquid phase equilibria in the ternary system Cr–Ni–Ti was investigated using electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and differential thermal analysis. Literature data on solid state phase equilibria are confirmed. The Cr 2 Ti Laves phase modifications coexisting with Ni–Ti phases are clarified to be hexagonal C14-type and cubic C15-type. The C14-type Laves phase γCr 2 Ti is found to coexist with the liquid phase. It forms in the pseudobinary peritectic reaction p max1 from L + β(Cr,Ti) at 1389 °C. On further cooling γCr 2 Ti + NiTi solidify at 1202 °C in the pseudobinary eutectic e max2 . In the Cr-rich part of the system ternary eutectics occur at 1216 °C (E 1 : L = Ni 3 Ti + (Ni) + β(Cr,Ti)) and 1100 °C (E 2 : L = NiTi + Ni 3 Ti + β(Cr,Ti)), respectively. No ternary eutectic is found in the Ti-rich part. Rather the eutectic trough ends in the binary eutectic L = NiTi 2 + β(Ti)

  8. Ternary fission of spontaneously fissile uranium isomers excited by neutrons

    International Nuclear Information System (INIS)

    Makarenko, V.E.; Molchanov, Y.D.; Otroshchenko, G.A.; Yan'kov, G.B.

    1989-01-01

    Spontaneously fissile isomers (SFI) of uranium were excited in the reactions 236,238 U(n,n') at an average neutron energy 4.5 MeV. A pulsed electrostatic accelerator and time analysis of the fission events were used. Fission fragments were detected by the scintillation method, and long-range particles from fission were detected by an ionization method. The relative probability of fission of nuclei through a spontaneously fissile isomeric state was measured: (1.30±0.01)·10 -4 ( 236 U) and (1.48±0.02)·10 -4 ( 238 U). Half-lives of the isomers were determined: 121±2 nsec (the SFI 236 U) and 267±13 nsec (the SFI 238 U). In study of the ternary fission of spontaneously fissile isotopes of uranium it was established that the probability of the process amounts to one ternary fission per 163±44 binary fissions of the SFI 236 U and one ternary fission per 49±14 binary fissions of the SFI 238 U. The substantial increase of the probability of ternary fission of SFI of uranium in comparison with the case of ternary fission of nuclei which are not in an isomeric state may be related to a special nucleon configuration of the fissile isomers of uranium

  9. Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

    International Nuclear Information System (INIS)

    Nasir, Navida; Melnychenko-Koblyuk, Nataliya; Grytsiv, Andriy; Rogl, Peter; Giester, Gerald; Wosik, Jaroslaw; Nauer, Gerhard E.

    2010-01-01

    Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 deg. C) and Sr-Cu-Si (800 deg. C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi 3 (BaNiSn 3 -type) and SrNi 9-x Si 4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni x Si 1-x ) 2 (AlB 2 -type). The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi 5.5 Si 6.5 □ 1.0 . Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu 2-x Si 2+x (ThCr 2 Si 2 -type), Sr(Cu x Si 1-x ) 2 (AlB 2 -type), SrCu 9-x Si 4+x (0≤x≤1.0; CeNi 8.5 Si 4.5 -type) and SrCu 13-x Si x (4≤x≤1.8; NaZn 13 -type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems. Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba. - Graphical abstract: The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type and is related to CeNi 8.5 Si 4.5 -type.

  10. Model for competitive binary and ternary ion-molecule reactions

    International Nuclear Information System (INIS)

    Herbst, E.

    1985-01-01

    A mechanism by which competitive binary and ternary ion-molecule reactions can occur is proposed. Calculations are undertaken for the specific system CH3(+) + NH3 + He which has been studied in the laboratory by Smith and Adams (1978), and the potential surface of which has been studied theoretically by Nobes and Radom (1983). It is shown that a potential-energy barrier in the exit channel prevents the rapid dissociation of collision complexes with large amounts of angular momentum and thereby allows collisional stabilization of the complexes. The calculated ternary-reaction rate coefficient is in good agreement with the experimental value, but a plot of the effective two-body rate coefficient of the ternary channel vs helium density does not quite show the observed saturation. 21 references

  11. Collective and tracer diffusion kinetics in the ternary random alloy

    International Nuclear Information System (INIS)

    Belova, I.V.; Murch, G.E.; Allnatt, A.R.

    2002-01-01

    In this study, collective and tracer diffusion kinetics is addressed for the ternary random alloy. A formal solution from the self-consistent theory of Moleko et al (Moleko L K, Allnatt A R and Allnatt E L 1989 Phil. Mag. A 59 141) is derived for collective diffusion and compared with the corresponding solution for the binary random alloy. Tracer diffusion in the ternary alloy is treated from the perspective of a special case of the quaternary random alloy. Results from Monte Carlo calculations for tracer and collective correlation factors (for the bcc ternary random alloy) are found to be in excellent agreement with this self-consistent theory but in only semi-quantitative agreement with the earlier theory of Manning (Manning J R 1971 Phys. Rev. B 4 1111). (author)

  12. Constitutional studies of the molybdenum-ruthenium-palladium ternary system

    International Nuclear Information System (INIS)

    Cornish, L.A.; Pratt, J.N.

    1997-01-01

    An experimental and computational study has been made of phase equilibria in the Mo-Ru-Pd ternary system. The constitution of annealed binary and ternary alloys was investigated using optical and electron microscopy, X-ray diffraction and SEM phase analysis techniques. Limited thermodynamic measurements were made using the ZrO 2 solid electrolyte e.m.f. method. The data obtained from the various techniques were used to construct a ternary isothermal section at 1473 K. The experimentally determined section is compared with a calculated section for the same temperature, computed using thermodynamic coefficients derived solely from binary system information. Lattice parameters are reported for the b.c.c., f.c.c. and c.p.h. solid solutions and for the σ phase. (orig.)

  13. Thermal decomposition of cesium-ethylene-ternary graphite intercalation compounds

    International Nuclear Information System (INIS)

    Matsumoto, R.; Oishi, Y.; Arii, T.

    2010-01-01

    In this paper, the thermal decomposition of air-stable Cs-ethylene-ternary graphite intercalation compounds (GICs) is discussed. The air stability of Cs-GICs is improved remarkably after the absorption of ethylene into their interlayer nanospace, because the ethylene molecules oligomerize and block the movement of Cs atoms. In addition, the evaporation of Cs atoms from the Cs-ethylene-ternary GICs is observed above 400 o C under a N 2 atmosphere of 100 Pa by ion attachment mass spectrometry. Although the results indicate that Cs-ethylene-ternary GICs remain stable up to approximately 400 o C, their thermal stability is not very high as compared to that of Cs-GICs.

  14. α-ternary decay of Cf isotopes, statistical model

    International Nuclear Information System (INIS)

    Joseph, Jayesh George; Santhosh, K.P.

    2017-01-01

    The process of splitting a heavier nucleus to three simultaneous fragments is termed as ternary fission and compared to usual binary fission, it is a rare process. Depending on the nature of third particle either it is called light charged particle (LCP) accompanying fission if it is light or true ternary fission if all three fragments have nearly same mass distributions. After experimental observations in early seventies, initially with a slow pace, now theoretical studies in ternary fission has turned to a hot topic in nuclear decay studies especially in past one decade. Mean while various models have been developed, existing being modified and seeking for new with a hope that it can beam a little more light to the profound nature of nuclear interaction. In this study a statistical method, level density formulation, has been employed

  15. Completed Local Ternary Pattern for Rotation Invariant Texture Classification

    Directory of Open Access Journals (Sweden)

    Taha H. Rassem

    2014-01-01

    Full Text Available Despite the fact that the two texture descriptors, the completed modeling of Local Binary Pattern (CLBP and the Completed Local Binary Count (CLBC, have achieved a remarkable accuracy for invariant rotation texture classification, they inherit some Local Binary Pattern (LBP drawbacks. The LBP is sensitive to noise, and different patterns of LBP may be classified into the same class that reduces its discriminating property. Although, the Local Ternary Pattern (LTP is proposed to be more robust to noise than LBP, however, the latter’s weakness may appear with the LTP as well as with LBP. In this paper, a novel completed modeling of the Local Ternary Pattern (LTP operator is proposed to overcome both LBP drawbacks, and an associated completed Local Ternary Pattern (CLTP scheme is developed for rotation invariant texture classification. The experimental results using four different texture databases show that the proposed CLTP achieved an impressive classification accuracy as compared to the CLBP and CLBC descriptors.

  16. The partially alternating ternary sum in an associative dialgebra

    International Nuclear Information System (INIS)

    Bremner, Murray R; Sanchez-Ortega, Juana

    2010-01-01

    The alternating ternary sum in an associative algebra, abc - acb - bac + bca + cab - cba, gives rise to the partially alternating ternary sum in an associative dialgebra with products dashv and vdash by making the argument a the center of each term. We use computer algebra to determine the polynomial identities in degree ≤9 satisfied by this new trilinear operation. In degrees 3 and 5, these identities define a new variety of partially alternating ternary algebras. We show that there is a 49-dimensional space of multilinear identities in degree 7, and we find equivalent nonlinear identities. We use the representation theory of the symmetric group to show that there are no new identities in degree 9.

  17. New ternary hydride formation in U-Ti-H system

    International Nuclear Information System (INIS)

    Yamamoto, Takuya; Kayano, Hideo; Yamawaki, Michio.

    1991-01-01

    Hydrogen absorption properties of two titanium-rich uranium alloys, UTi 2 and UTi 4 , were studied in order to prepare and identify the recently found ternary hydride. They slowly reacted with hydrogen of the initial pressure of 10 5 Pa at 873K to form the ternary hydride. The hydrogenated specimen mainly consisted of the pursued ternary hydride but contained also U(or UO 2 ), TiH x , and some transient phases. X-ray powder diffraction and Electron Probe Micro Analysis proved that it was the UTi 2 H x with the expected MgCu 2 structure, though all the X-ray peaks were broad probably because of inhomogeneity. This compound had extremely high resistance to powdering on its formation, which showed high potential utilities for a non-powdering tritium storage system or for other purposes. (author)

  18. Modeling and Simulation of Monolithic AlGaAs/InGaAs Tandem Solar Cell

    Directory of Open Access Journals (Sweden)

    Samia SLIMANI

    2015-06-01

    Full Text Available Employing conventional III-V junctions we report a classical calculation of conduction and valence band edge and the electron and hole densities. It is shown that the optimum performance can be achieved by employing AlGaAs /AlGaAs/InGaAs monolithic cascade solar cells, we have established these calculations by solving the Poisson equation within the framework of the Nextnano.

  19. Studies on II-VI and III-V semiconductor nanostructures. Introduction of the core/shell/shell structure and development of CdSe nanocrystals in an automatized procedure; Untersuchungen an II-VI und III-V Halbleiternanostrukturen. Einfuehrung der Core/shell/shell-Struktur und Darstellung von CdSe-Nanokristallen in einem automatisierten Verfahren

    Energy Technology Data Exchange (ETDEWEB)

    Mekis, I.

    2005-11-15

    The work in this dissertation is focused on the development and characterization of fluorescent II-VI and III-V-Nanomaterials. Highly luminescent and photostable Nanocrystals with narrow size distributions were prepared. It was shown that nearly monodisperse CdSe-Nanocrystals could be prepared from Cd(Ac){sub 2} and TOPSe in a mixture of TOPO/TOP/HDA/TDPA. Nearly monodisperse CdSe/CdS-Core/shell-Nanocrystals have been prepared in a one-pot-synthesis by injection of H{sub 2}S-Gas into a freshly prepared crude solution of CdSe. The passivation of the CdSe-core with an inorganic shell of CdS resulted in the drastic improvement of the photoluminescence-efficiency of the colloidal solution. Reproducible room-temperature quantum yields reached up to a value of 85%. Photostability investigations have proved the enhanced stability of CdSe/CdS-Nanocrystals compared to CdSe-Nanocrystals under illumination with UV-Light. A novel type of luminescent semiconductor nanocrystal structure has been developed, consisting of a CdSe core and two anorganic shells. Highly fluorescent and nearly monodisperse CdSe/CdS/ZnS- and CdSe/ZnSe/ZnS-Core/shell/shell-nanocrystals have been prepared via organometallic- and acetate-precursors. The Core/she ll/shell particles reached reproducible room-temperature quantum yields up to 85%. Photostability investigations among CdSe-core, CdSe/CdS-Core/shell- and CdSe/CdS/ZnS- Core/shell/-shell-nanocrystals under illumination with UV-light have proved the highest photostability of the Core/shell/shell-particles. The photostabilities of CdSe/ZnSe/ZnS-and CdSe/ZnS-nanocrystals were compared under illumination with intense laser-beam in air. Another part of this work focused on the development of an automated synthesis procedure of CdSe-nanocrystals by constructing and implementing a flow-reactor system. The size and structure of prepared nanocrystals depended considerably on the Cd:Se-precursorratio and the flow-rate. The preparation of CdSe using Cd(Ac)2

  20. Equilibrium phase diagram of the Ag-Au-Pb ternary system

    International Nuclear Information System (INIS)

    Hassam, S.; Bahari, Z.

    2005-01-01

    The phase diagram of the ternary system Ag-Au-Pb has been established using differential thermal analysis and X-ray powder diffraction analysis. Four vertical sections were studied: X Pb = 0.40, X Au /X Pb = 1/3, X Ag /X Au = 4/1 and X Ag /X Au = 1/1. Two ternary transitory peritectics and one ternary eutectic were characterized. A schematic representation of the ternary equilibria is given

  1. Adiabatic pipelining: a key to ternary computing with quantum dots

    Science.gov (United States)

    Pečar, P.; Ramšak, A.; Zimic, N.; Mraz, M.; Lebar Bajec, I.

    2008-12-01

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  2. Adiabatic pipelining: a key to ternary computing with quantum dots

    International Nuclear Information System (INIS)

    Pecar, P; Zimic, N; Mraz, M; Lebar Bajec, I; Ramsak, A

    2008-01-01

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  3. Adiabatic pipelining: a key to ternary computing with quantum dots.

    Science.gov (United States)

    Pečar, P; Ramšak, A; Zimic, N; Mraz, M; Lebar Bajec, I

    2008-12-10

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  4. A novel ternary logic circuit using Josephson junction

    International Nuclear Information System (INIS)

    Morisue, M.; Oochi, K.; Nishizawa, M.

    1989-01-01

    This paper describes a novel Josephson complementary ternary logic circuit named as JCTL. This fundamental circuit is constructed by combination of two SQUIDs, one of which is switched in the positive direction and the other in the negative direction. The JCTL can perform the fundamental operations of AND, OR, NOT and Double NOT in ternary form. The principle of the operation and design criteria are described in detail. The results of the simulation show that the reliable operations of these circuits can be achieved with a high performance

  5. PM1 steganographic algorithm using ternary Hamming Code

    Directory of Open Access Journals (Sweden)

    Kamil Kaczyński

    2015-12-01

    Full Text Available PM1 algorithm is a modification of well-known LSB steganographic algorithm. It has increased resistance to selected steganalytic attacks and increased embedding efficiency. Due to its uniqueness, PM1 algorithm allows us to use of larger alphabet of symbols, making it possible to further increase steganographic capacity. In this paper, we present the modified PM1 algorithm which utilizies so-called syndrome coding and ternary Hamming code. The modified algorithm has increased embedding efficiency, which means fewer changes introduced to carrier and increased capacity.[b]Keywords[/b]: steganography, linear codes, PM1, LSB, ternary Hamming code

  6. Binary and ternary carbides and nitrides of the transition metals and their phase relations

    International Nuclear Information System (INIS)

    Holleck, H.

    1981-01-01

    The occurrance and the structure of the binary and ternary transition metal carbides and nitrides are described. Phase diagrams are assessed for most of the binary and ternary systems. Many ternary phase diagrams are published in this report for the first time. (orig.) [de

  7. Solar Indices - Solar Flares

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  8. Solar Indices - Solar Ultraviolet

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  9. Solar Indices - Solar Corona

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  10. Solar Indices - Solar Irradiance

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  11. Sc-W-Si and Sc-W-Ge ternary systems

    International Nuclear Information System (INIS)

    Kotur, B.Ya.; Voznyak, O.M.; Bodak, O.I.

    1989-01-01

    Phase equilibria in Sc-W-Si and Sc-W-Ge ternary systems are investigated at 1070 K. Sc 2+x W 3-x Si 4 ternary compound (0≤x≤1) is determined, its crystal structure (Ce 2 Sc 3 Si 4 structural type), as well as, change of elementary cell parameters and microhardness within homogeneity range are determined. Regularities of component interaction within Sc-M-Si(Ge) (M-Cr, Mo, W) ternary system are determined. Ternary systems with Mo and W are more closer to each other according to the phase equilibria character, than to ternary systems with Cr

  12. Ternary mixtures of alkyltriphenylphosphonium bromides (C12 TPB ...

    Indian Academy of Sciences (India)

    Administrator

    Critical Micellar Concentrations (CMCs) by conductometry, but their ternary mixtures produce single ... efficiently quenched pyrene fluorescence; the performances of the homologues in this respect were assessed. Keywords ..... The shape of the amphiphile aggregates ..... Haque M E, Das A R and Moulik S P 1999 J. Colloid.

  13. Mechanochemically prepared ternary hybrid cathode material for lithium batteries

    International Nuclear Information System (INIS)

    Posudievsky, Oleg Yu; Kozarenko, Olga A.; Dyadyun, Vyacheslav S.; Jorgensen, Scott W.; Spearot, James A.; Koshechko, Vyacheslav G.; Pokhodenko, Vitaly D.

    2013-01-01

    Graphical abstract: The presence of macromolecules of an ion-conducting polymer in the composition of the ternary nanocomposite PPy–PEO/V 2 O 5 promotes interfacial transfer of lithium ions and also facilitates faster transport inside the particles of the nanocomposite. -- Highlights: • Two- and three component nanocomposites are prepared via a solvent-free mechanochemical synthesis. • The nanocomposites retain their capacity above 200 mA h g −1 for at least one hundred cycles. • The presence of PEO promotes interfacial transfer of lithium ions and facilitates faster transport inside the nanocomposite. -- Abstract: Ternary host–guest nanocomposite based on vanadium oxide and two polymers with different types of conductivity (ionic and electronic) – polypyrrole (PPy) and polyethylene oxide (PEO) – is prepared by solventless mechanochemical synthesis. The nanocomposite can be reversibly cycled with a specific capacity of ∼200 mA h g −1 for at least one hundred cycles of full charge–discharge as the active component of the positive electrode of lithium batteries. Electrochemical performance of ternary PPy 0.1 PEO 0.15 V 2 O 5 is compared with two-component analog PPy 0.1 V 2 O 5 . The presence of macromolecules of an ion-conducting polymer in the composition of the ternary nanocomposite PPy 0.1 PEO 0.15 V 2 O 5 promotes interfacial transfer of lithium ions and also facilitates faster transport inside the particles of the nanocomposite

  14. Robust Self-Triggered Coordination With Ternary Controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo; Nair, G.N.

    2013-01-01

    This paper regards the coordination of networked systems, studied in the framework of hybrid dynamical systems. We design a coordination scheme which combines the use of ternary controllers with a self-triggered communication policy. The communication policy requires the agents to measure, at each

  15. Excess isentropic compressibility and speed of sound of the ternary

    Indian Academy of Sciences (India)

    These excess properties of the binary mixtures were fitted to Redlich-Kister equation, while the Cibulka's equation was used to fit the values related to the values to the ternary system. These excess properties have been used to discuss the presence of significant interactions between the component molecules in the binary ...

  16. Robust self-triggered coordination with ternary controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo

    2013-01-01

    This paper regards the coordination of networked systems, studied in the framework of hybrid dynamical systems. We design a coordination scheme which combines the use of ternary controllers with a self-triggered communication policy. The communication policy requires the agents to measure, at each

  17. Calculation of Fe–B–V ternary phase diagram

    International Nuclear Information System (INIS)

    Homolová, Viera; Kroupa, Aleš; Výrostková, Anna

    2012-01-01

    Highlights: ► Phase diagram of Fe–B–V system was modelled by CALPHAD method. ► Database for thermodynamic calculations for Fe–B–V system was created. ► The new ternary phase was found in 67Fe–18B–15V [in at.%] alloy. - Abstract: The phase equilibria of the Fe–B–V ternary system are studied experimentally and theoretically in this paper. Phase diagram of the system was modelled by CALPHAD method. Boron was modelled as an interstitial element in the FCC and BCC solid solutions. The calculations of isothermal sections of phase diagram are compared with our experimental results at 903 and 1353 K and with available literature experimental data. New ternary phase (with chemical composition 28Fe32V40B in at.%) was found in 67Fe–18B–15V alloy [in at.%]. Further experimental studies for the determination of exact nature of the ternary phase including crystallographic information are necessary.

  18. Effect of Limestone Powder on Microstructure of Ternary Cementitious System

    NARCIS (Netherlands)

    Zhang, Y.; Ye, G.

    2012-01-01

    The pressure to reach sustainability favours the development of ternary composite cement. The synergistic effect on mechanical behaviour at 28 days between limestone powder (LP) and pozzolanic additives, i.e. fly ash (FA) and blast furnace slag (BFS), has been documented. In order to better

  19. Studies on Molecular Interaction in Ternary Liquid Mixtures

    Directory of Open Access Journals (Sweden)

    R. Uvarani

    2010-01-01

    Full Text Available Ultrasonic velocity, density and viscosity for the ternary liquid mixtures of cyclohexanone with 1-propanol and 1-butanol in carbon tetrachloride were measured at 303 K. The acoustical parameters and their excess values were calculated. The trends in the variation of these excess parameters were used to discuss the nature and strength of the interactions present between the component molecules.

  20. A Simple Refraction Experiment for Probing Diffusion in Ternary Mixtures

    Science.gov (United States)

    Coutinho, Cecil A.; Mankidy, Bijith D.; Gupta, Vinay K.

    2010-01-01

    Diffusion is a fundamental phenomenon that is vital in many chemical processes such as mass transport in living cells, corrosion, and separations. We describe a simple undergraduate-level experiment based on Weiner's Method to probe diffusion in a ternary aqueous mixture of small molecular-weight molecules. As an illustration, the experiment…

  1. Segregation in ternary alloys: an interplay of driving forces

    International Nuclear Information System (INIS)

    Luyten, J.; Helfensteyn, S.; Creemers, C.

    2003-01-01

    Monte Carlo (MC) simulations combined with the constant bond energy (CBE) model are set up to explore and understand the general segregation behaviour in ternary alloys as a function of composition and more in particular the segregation to Cu-Ni-Al (1 0 0) surfaces. Besides its simplicity, allowing swift simulations, which are necessary for a first general survey over all possible compositions, one of the advantages of the CBE model lies in the possibility to clearly identify the different driving forces for segregation. All simulations are performed in the Grand Canonical Ensemble, using a new algorithm to determine the chemical potential of the components. Notwithstanding the simplicity of the CBE model, one extra feature is evidenced: depending on the values of the interatomic interaction parameters, in some regions of the ternary diagram, a single solid solution becomes thermodynamically unstable, leading to demixing into two conjugate phases. The simulations are first done for three hypothetical systems that are however representative for real alloy systems. The three systems are characterised by different sets of interatomic interaction parameters. These extensive simulations over the entire composition range of the ternary alloy yield a 'topographical' segregation map, showing distinct regions where different species segregate. These distinct domains originate from a variable interplay between the driving forces for segregation and attractive/repulsive interactions in the bulk of the alloy. The results on these hypothetical systems are very helpful for a better understanding of the segregation behaviour in Cu-Ni-Al and other ternary alloys

  2. Univolatility curves in ternary mixtures: geometry and numerical computation

    DEFF Research Database (Denmark)

    Shcherbakova, Nataliya; Rodriguez-Donis, Ivonne; Abildskov, Jens

    2017-01-01

    We propose a new non-iterative numerical algorithm allowing computation of all univolatility curves in homogeneous ternary mixtures independently of the presence of the azeotropes. The key point is the concept of generalized univolatility curves in the 3D state space, which allows the main comput...

  3. Phase coexistence and line tension in ternary lipid systems

    NARCIS (Netherlands)

    Idema, T.; Leeuwen, van J.M.J.; Storm, C.

    2009-01-01

    The ternary system consisting of cholesterol, a saturated lipid, and an unsaturated one exhibits a rich phase behavior with multiple phase coexistence regimes. Remarkably, phase separation even occurs when each of the three binary systems consisting of two of these components is a uniform mixture.

  4. Thermodynamic evaluation of the Ti-Al-O ternary system

    International Nuclear Information System (INIS)

    Lee, B.-J.

    1997-01-01

    A thermodynamic evaluation of the Ti-Al-O ternary system has been made by using thermodynamic models for the Gibbs energy of individual phases. A consistent model parameter set was determined so that the calculation of isothermal sections and other thermodynamic quantities becomes possible. The agreement between calculation and corresponding experimental data was generally good along large temperature and composition range. (orig.)

  5. Design of ternary low-power Domino JKL flip—flop and its application

    International Nuclear Information System (INIS)

    Wang Pengjun; Yang Qiankun; Zheng Xuesong

    2012-01-01

    By researching the ternary flip—flop and the adiabatic Domino circuit, a novel design of low-power ternary Domino JKL flip—flop on the switch level is proposed. First, the switch-level structure of the ternary adiabatic Domino JKL flip—flop is derived according to the switch-signal theory and its truth table. Then the ternary loop operation circuit and ternary reverse loop operation circuit are achieved by employing the ternary JKL flip—flop. Finally, the circuit is simulated by using the Spice tool and the results show that the logic function is correct. The energy consumption of the ternary adiabatic Domino JKL flip—flop is 69% less than its conventional Domino counterpart. (semiconductor integrated circuits)

  6. Experimental investigation of the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases

    International Nuclear Information System (INIS)

    Mashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.

    2013-01-01

    Highlights: ► The self-consistent phase diagram of the Ag–Bi–I system is constructed. ► Ag 2 BiI 5 and AgBi 2 I 7 are the only ternary phases of the system. ► Standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 are calculated. - Abstract: The phase equilibriums in the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases were experimentally determined by using DTA and XRD techniques and EMF measurements with the Ag 4 RbI 5 solid electrolyte. According to the obtained experimental results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liquids surface have been revised. The fields of the primary crystallization and types and coordinates of nonvariant and monovariant equilibriums were determined. The partial molar functions of silver iodide and silver in the alloys as well as the standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 were calculated based on EMF measurements.

  7. Thermal Annealing Effect on Poly(3-hexylthiophene: Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

    Directory of Open Access Journals (Sweden)

    H. Derouiche

    2013-01-01

    Full Text Available We have fabricated poly(3-hexylthiophene (P3HT/copper phthalocyanine (CuPc/fullerene (C60 ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO/poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT/PSS photoanode and a bathocuproine (BCP/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

  8. Thermodynamic Calculations of Ternary Polyalcohol and Amine Phase Diagrams for Thermal Energy Storage Materials

    Science.gov (United States)

    Shi, Renhai

    Organic polyalcohol and amine globular molecular crystal materials as phase change materials (PCMs) such as Pentaglycerine (PG-(CH3)C(CH 2OH)3), Tris(hydroxymethyl)aminomethane (TRIS-(NH2)C(CH 2OH)3), 2-amino-2methyl-1,3-propanediol (AMPL-(NH2)(CH3)C(CH2OH)2), and neopentylglycol (NPG-(CH3)2C(CH2OH) 2) can be considered to be potential candidates for thermal energy storage (TES) applications such as waste heat recovery, solar energy utilization, energy saving in buildings, and electronic device management during heating or cooling process in which the latent heat and sensible heat can be reversibly stored or released through solid state phase transitions over a range of temperatures. In order to understand the polymorphism of phase transition of these organic materials and provide more choice of materials design for TES, binary systems have been studied to lower the temperature of solid-state phase transition for the specific application. To our best knowledge, the study of ternary systems in these organic materials is limited. Based on this motivation, four ternary systems of PG-TRIS-AMPL, PG-TRIS-NPG, PG-AMPL-NPG, and TRIS-AMPL-NPG are proposed in this dissertation. Firstly, thermodynamic assessment with CALPHAD method is used to construct the Gibbs energy functions into thermodynamic database for these four materials based on available experimental results from X-Ray Diffraction (XRD) and Differential Scanning Calorimetry (DSC). The phase stability and thermodynamic characteristics of these four materials calculated from present thermodynamic database with CALPHAD method can match well the present experimental results from XRD and DSC. Secondly, related six binary phase diagrams of PG-TRIS, PG-AMPL, PG-NPG, TRIS-AMPL, TRIS-NPG, and AMPL-NPG are optimized with CALPHAD method in Thermo-Calc software based on available experimental results, in which the substitutional model is used and excess Gibbs energy is expressed with Redlich-Kister formalism. The

  9. Solar building

    OpenAIRE

    Zhang, Luxin

    2014-01-01

    In my thesis I describe the utilization of solar energy and solar energy with building integration. In introduction it is also mentioned how the solar building works, trying to make more people understand and accept the solar building. The thesis introduces different types of solar heat collectors. I compared the difference two operation modes of solar water heating system and created examples of solar water system selection. I also introduced other solar building applications. It is conv...

  10. Solar energy

    International Nuclear Information System (INIS)

    Anon.

    1992-01-01

    This chapter discusses the role solar energy may have in the energy future of the US. The topics discussed in the chapter include the solar resource, solar architecture including passive solar design and solar collectors, solar-thermal concentrating systems including parabolic troughs and dishes and central receivers, photovoltaic cells including photovoltaic systems for home use, and environmental, health and safety issues

  11. Ternary Fission of U235 by Resonance Neutrons

    International Nuclear Information System (INIS)

    Kvitek, I.; Popov, Ju.P.; Rjabov, Ju.V.

    1965-01-01

    Recently a number of papers have appeared indicating considerable variations in the ratio of the ternary-fission cross-section to the binary-fission cross-section of U 235 on transition from one neutron resonance to another. However, such variations have not been discovered in U 233 and Pu 239 . The paper reports investigations of the ternary fission of U 235 by neutrons with an energy of 0.1 to 30 eV. Unlike other investigators of the ternary fission of U 235 , we identified the ternary-fission event by the coincidence of one of the fission fragments with a light long-range particle. This made it passible to separate ternary fissions from the possible contribution of the (n, α)reaction. The measurements were performed at the fast pulsed reactor of the Joint Institute for Nuclear Research by the time-of-flight method. A flight length of 100 m was used, giving a resolution of 0.6 μs/m. Gas scintillation counters filled with xenon at a pressure of 2 atm were used to record the fission fragments and the light long-range particle. A layer of enriched U 235 ∼2 mg/cm 2 thick and ∼300 cm 2 in area was applied to an aluminium foil 20-fim thick. The scintillations from the fission fragments were recorded in the gas volume on one side of the foil and those from the light long-range particles in that on the other. In order to assess the background (e.g . coincidences of the pulse from a fragment with that from a fission gamma quantum or a proton from the (n, p) reaction in the aluminium foil), a measurement was carried out in which the volume recording the long-range particle was shielded with a supplementary aluminium filter 1-mm thick. The results obtained indicate the absence of the considerable variations in the ratio between the ternary-and binary- fission cross-sections for U 235 that have been noted by other authors. Measurements showed no irregularity in the ratio of the cross-sections in the energy range 0.1 to 0.2 eV. The paper discusses the possible effect of

  12. Hybrid III-V Silicon Lasers

    Science.gov (United States)

    Bowers, John

    2014-03-01

    Abstract: A number of important breakthroughs in the past decade have focused attention on Si as a photonic platform. We review here recent progress in this field, focusing on efforts to make lasers, amplifiers, modulators and photodetectors on or in silicon. We also describe optimum quantum well design and distributed feedback cavity design to reduce the threshold and increase the efficiency and power output. The impact active silicon photonic integrated circuits could have on interconnects, telecommunications and on silicon electronics is reviewed. Biography: John Bowers holds the Fred Kavli Chair in Nanotechnology, and is the Director of the Institute for Energy Efficiency and a Professor in the Departments of Electrical and Computer Engineering and Materials at UCSB. He is a cofounder of Aurrion, Aerius Photonics and Calient Networks. Dr. Bowers received his M.S. and Ph.D. degrees from Stanford University and worked for AT&T Bell Laboratories and Honeywell before joining UC Santa Barbara. Dr. Bowers is a member of the National Academy of Engineering and a fellow of the IEEE, OSA and the American Physical Society. He is a recipient of the OSA/IEEE Tyndall Award, the OSA Holonyak Prize, the IEEE LEOS William Streifer Award and the South Coast Business and Technology Entrepreneur of the Year Award. He and coworkers received the EE Times Annual Creativity in Electronics (ACE) Award for Most Promising Technology for the hybrid silicon laser in 2007. Bowers' research is primarily in optoelectronics and photonic integrated circuits. He has published ten book chapters, 600 journal papers, 900 conference papers and has received 54 patents. He has published 180 invited papers and conference papers, and given 16 plenary talks at conferences. As well as Chong Zhang.

  13. II-VI/III-V Heterojunction Lasers

    National Research Council Canada - National Science Library

    Gunshor, Robert

    1999-01-01

    ... in both. In the second part of the program we studied the growth and the optical evaluation of wide bandgap nitride heterostructures, an effort which included the first reporting of a GaN-based laser to be fabricated...

  14. Thermodynamic calculations in ternary titanium–aluminium–manganese system

    Directory of Open Access Journals (Sweden)

    ANA I. KOSTOV

    2008-04-01

    Full Text Available Thermodynamic calculations in the ternary Ti–Al–Mn system are shown in this paper. The thermodynamic calculations were performed using the FactSage thermochemical software and database, with the aim of determining thermodynamic properties, such as activities, coefficient of activities, partial and integral values of the enthalpies and Gibbs energies of mixing and excess energies at two different temperatures: 2000 and 2100 K. Bearing in mind that no experimental data for the Ti–Al–Mn ternary system have been obtained or reported. The obtained results represent a good base for further thermodynamic analysis and may be useful as a comparison with some future critical experimental results and thermodynamic optimization of this system.

  15. Ternary carbide uranium fuels for advanced reactor design applications

    International Nuclear Information System (INIS)

    Knight, Travis; Anghaie, Samim

    1999-01-01

    Solid-solution mixed uranium/refractory metal carbides such as the pseudo-ternary carbide, (U, Zr, Nb)C, hold significant promise for advanced reactor design applications because of their high thermal conductivity and high melting point (typically greater than 3200 K). Additionally, because of their thermochemical stability in a hot-hydrogen environment, pseudo-ternary carbides have been investigated for potential space nuclear power and propulsion applications. However, their stability with regard to sodium and improved resistance to attack by water over uranium carbide portends their usefulness as a fuel for advanced terrestrial reactors. An investigation into processing techniques was conducted in order to produce a series of (U, Zr, Nb)C samples for characterization and testing. Samples with densities ranging from 91% to 95% of theoretical density were produced by cold pressing and sintering the mixed constituent carbides at temperatures as high as 2650 K. (author)

  16. Experimental Investigation of Ternary Alloys for Fusion Breeding Blankets

    Energy Technology Data Exchange (ETDEWEB)

    Choi, B. William [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chiu, Ing L. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-26

    Future fusion power plants based on the deuterium-tritium (DT) fuel cycle will be required to breed the T fuel via neutron reactions with lithium, which will be incorporated in a breeding blanket that surrounds the fusion source. Recent work by LLNL proposed the used of liquid Li as the breeder in an inertial fusion energy (IFE) power plant. Subsequently, an LDRD was initiated to develop alternatives ternary alloy liquid metal breeders that have reduced chemical reactivity with water and air compared to pure Li. Part of the work plan was to experimentally investigate the phase diagrams of ternary alloys. Of particular interest was measurement of the melt temperature, which must be low enough to be compatible with the temperature limits of the steel used in the construction of the chamber and heat transfer system.

  17. Reconstructing Unrooted Phylogenetic Trees from Symbolic Ternary Metrics.

    Science.gov (United States)

    Grünewald, Stefan; Long, Yangjing; Wu, Yaokun

    2018-03-09

    Böcker and Dress (Adv Math 138:105-125, 1998) presented a 1-to-1 correspondence between symbolically dated rooted trees and symbolic ultrametrics. We consider the corresponding problem for unrooted trees. More precisely, given a tree T with leaf set X and a proper vertex coloring of its interior vertices, we can map every triple of three different leaves to the color of its median vertex. We characterize all ternary maps that can be obtained in this way in terms of 4- and 5-point conditions, and we show that the corresponding tree and its coloring can be reconstructed from a ternary map that satisfies those conditions. Further, we give an additional condition that characterizes whether the tree is binary, and we describe an algorithm that reconstructs general trees in a bottom-up fashion.

  18. Ternary fission in an effective liquid drop model

    International Nuclear Information System (INIS)

    Duarte, Sergio B.; Tavares, Odilon A.P.; Dimarco, A.; Goncalves, Marcello; Guzman, Fernando; Trallero-Herrera, Carlos; Rodriguez, Oscar; Garcia, Fermin

    2001-01-01

    Full text follows: The nuclear partition in three fragments has been observed in recent experiments for fission process of 252 Cf and 24 '0 Pu. We apply the Effective Liquid Drop Model (ELDM), successfully used for discussing binary cold fission and cluster emissions for a three center geometric shape parametrization, describing the quasi-molecular deformation which can lead to ternary fragmentation. A preliminary calculation for rates of these processes are performed and the results are compared to the rate of the dominant binary fission process. A large range of parent nuclei (spherical and deformed) is covered in the calculation. The purpose is to point out others possible ternary fission process experimentally measurable. (author)

  19. Susceptibility of ternary aluminum alloys to cracking during solidification

    International Nuclear Information System (INIS)

    Liu, Jiangwei; Kou, Sindo

    2017-01-01

    The crack susceptibility map of a ternary Al alloy system provides useful information about which alloy compositions are most susceptible to cracking and thus should be avoided by using a filler metal with a significantly different composition. In the present study the crack susceptibility maps of ternary Al alloy systems were calculated based on the maximum |dT/d(f S ) 1/2 | as an index for the crack susceptibility, where T is temperature and f S fraction solid. Due to the complexity associated with ternary alloy solidification, commercial thermodynamic software Pandat and Al database PanAluminum, instead of analytical equations, were used to calculate f S as a function of T and hence the maximum |dT/d(f S ) 1/2 | for ternary Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si alloy systems. A crack susceptibility map covering 121 alloy compositions was constructed for each of the three ternary alloy systems at each of the following three levels of back diffusion: no back diffusion, back diffusion under a 100 °C/s cooling rate, and back diffusion under 20° C/s. The location of the region of high crack susceptibility, which is the most important part of the map, was shown in each of the nine calculated maps. These locations were compared with those observed in crack susceptibility tests by previous investigators. With back diffusion considered, either under 20 or 100 °C/s, the agreement between the calculated and observed maps was good especially for Al-Mg-Si and Al-Cu-Mg. Thus, the maximum |dT/d(f S ) 1/2 | can be used as a crack susceptibility index to construct crack susceptibility maps for ternary Al alloys and to evaluate the effect of back diffusion on their crack susceptibility. - Graphical abstract: The crack susceptibility map of a ternary alloy system indicates the composition range most susceptible to cracking, which should be avoided in welding or casting. The crack susceptibility maps of ternary Al alloy systems Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si were calculated based

  20. Dynamical theory of subconstituents based on ternary algebras

    International Nuclear Information System (INIS)

    Bars, I.; Guenaydin, M.

    1980-01-01

    We propose a dynamical theory of possible fundamental constituents of matter. Our scheme is based on (super) ternary algebras which are building blocks of Lie (super) algebras. Elementary fields, called ''ternons,'' are associated with the elements of a (super) ternary algebra. Effective gauge bosons, ''quarks,'' and ''leptons'' are constructed as composite fields from ternons. We propose two- and four-dimensional (super) ternon theories whose structures are closely related to CP/sub N/ and Yang-Mills theories and their supersymmetric extensions. We conjecture that at large distances (low energies) the ternon theories dynamically produce effective gauge theories and thus may be capable of explaining the present particle-physics phenomenology. Such a scenario is valid in two dimensions

  1. Cohesion energy calculations for ternary ionic novel crystals

    International Nuclear Information System (INIS)

    Vazquez P, G.; Cabrera, E.; Mijangos, R.R.; Valdez, E.; Duarte, C.

    2001-01-01

    The present work calculates the value of the link energy of a crystalline ternary structure newly formed by alkali halides. The ternary structure prepared with different concentrations of KCl x KBrRbCl 2 maintains a very good miscibility and stability. The calculation is based on the use of a generalization of the Vegard law (which generally is valid for binary compounds) for calculating the values of the lattice constant and the repulsive m exponent. The value of the lattice parameter given by X-ray diffractometry agrees with the close approximation of the calculated value of the method used. It also compares the value of energy cohesion obtained by the Born expression with more complex approximations. (Author)

  2. Developing Low-Clinker Ternary Blends for Indian Cement Industry

    Science.gov (United States)

    Pal, Aritra

    2018-05-01

    In today's scenario cement-concrete has become the backbone of infrastructure development. The use of concrete is increasing day by day and so does cement. One of the major concerns is that the cement manufacturing contributes 7% of total man-made CO2 emission in the environment. At the same time India being a developing country secured the second position in cement production. On the other hand solid waste management is one of the growing problems in India. As we are one of the major contributors in this situation so, the time has come to think about the sustainable alternatives. From various researches it has been observed that the low clinker cement can be suitable option. In the present paper we have tried to develop a low clinker ternary blend for Indian cement industry using the concept of synergetic behavior of fly ash-limestone reaction and formation of more stable monocarboaluminate hydrate and hemicarboaluminate hydrate. 30% fly ash and 15% limestone and 5% gypsum have been used as supplementary cementing material for replacing 50% clinker. The mechanical properties like, compressive strength, have been studied for the fly ash limestone ternary blends cements and the results have been compared with the other controlled blends and ternary blends. The effect of intergrinding of constituent materials has shown a comparable properties which can be used for various structural application. The effect of dolomitic limestone has also been studied in fly ash limestone ternary blends and the result shows the relation between compressive strength and dolomite content is inversely proportional.

  3. Tetragonal ternary borides: superconductivity, ferromagnetism and the role of scandium

    International Nuclear Information System (INIS)

    Matthias, B.T.; Patel, C.K.N.; Barz, H.; Corenzwit, E.; Vandenberg, J.M.

    1978-01-01

    The authors report and discuss two discoveries made while studying the condensation phenomena of ternary rhodium borides, MRh 4 B 4 . M is generally a trivalent transition metal, usually a rare earth element RE. An exception is scandium which by itself does not form an isomorphous boride, but in combination with many other elements will do just that. A suprising correlation between ferromagnetic and superconducting transition temperatures has been found. (Auth.)

  4. Electronic structure of ternary hydrides based on light elements

    Energy Technology Data Exchange (ETDEWEB)

    Orgaz, E. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico)]. E-mail: orgaz@eros.pquim.unam.mx; Membrillo, A. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico); Castaneda, R. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico); Aburto, A. [Departamento de Fisica, Facultad de Ciencias, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico)

    2005-12-08

    Ternary hydrides based on light elements are interesting owing to the high available energy density. In this work we focused into the electronic structure of a series of known systems having the general formula AMH{sub 4}(A=Li,Na,M=B,Al). We computed the energy bands and the total and partial density of states using the linear-augmented plane waves method. In this report, we discuss the chemical bonding in this series of complex hydrides.

  5. New ternary oxides with rhenium(4) of the perovskite structure

    Energy Technology Data Exchange (ETDEWEB)

    Jezowska-Trzebiatowska, B; Nowakowski, T; Mrozinski, J [Wroclaw Univ. (Poland)

    1978-01-01

    A series of ternary oxides described by general formula CaIrsub(x)Resub(1-x)O/sub 3/, where x 0.25; 0.33; 0.66; 0.75, has been obtained. The X-ray investigations have shown, that these compounds have a distorted perovskite structure. The proximal coordination sphere of Re/sup 4 +/ and Ir/sup 4 +/ ions constituted by an octahedron of oxide ions was confirmed by the IR spectra.

  6. Thermoelectric properties of RuSb2Te ternary skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Laufek, F.

    2013-01-01

    Roč. 42, č. 7 (2013), s. 1864-1869 ISSN 0361-5235 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 Keywords : RuSb2Te * ternary skutterudite * doping Subject RIV: CA - Inorganic Chemistry Impact factor: 1.675, year: 2013 http://link.springer.com/article/10.1007/s11664-012-2451-5

  7. Some new quasi-twisted ternary linear codes

    Directory of Open Access Journals (Sweden)

    Rumen Daskalov

    2015-09-01

    Full Text Available Let [n, k, d]_q code be a linear code of length n, dimension k and minimum Hamming distance d over GF(q. One of the basic and most important problems in coding theory is to construct codes with best possible minimum distances. In this paper seven quasi-twisted ternary linear codes are constructed. These codes are new and improve the best known lower bounds on the minimum distance in [6].

  8. Synthesis of Ternary Quantum Logic Circuits by Decomposition

    OpenAIRE

    Khan, Faisal Shah; Perkowski, Marek

    2005-01-01

    Recent research in multi-valued logic for quantum computing has shown practical advantages for scaling up a quantum computer. Multivalued quantum systems have also been used in the framework of quantum cryptography, and the concept of a qudit cluster state has been proposed by generalizing the qubit cluster state. An evolutionary algorithm based synthesizer for ternary quantum circuits has recently been presented, as well as a synthesis method based on matrix factorization.In this paper, a re...

  9. Synthesis, characterization, spectroscopic and catalytic oxidation studies of Fe(III), Ni(II), Co(III), V(IV) and U(VI) Schiff base complexes with N, O donor ligands derived from 2,3-diaminopyridine

    Energy Technology Data Exchange (ETDEWEB)

    Zabardasti, Abedien; Shangaie, Sayed Asad [Lorestan Univ., Khorramabad (Iran, Islamic Republic of). Dept. of Chemistry

    2016-10-15

    Fifteen new complexes of transition metals were designed using three Schiff base ligands and aldol condensation of 2,3-diaminopyridine with 5-R-2-hydroxybenzaldehyde (R = F, Cl, Br) in the 1:2 molar ratio. The tetradentate ligands N,N{sup '}-bis(5-R-2-hydroxybenzaldehyde) pyridine were acquired with the common formula H{sub 2}[(5-R-sal){sub 2}py] and characterized by IR, UV-Vis spectra, {sup 1}H-NMR and elemental analysis. These ligands produce 1:1 complexes M[(5-R-sal){sub 2}py] with Fe(III), Ni(II), Co(III), V(IV) and U(VI) metal ions. The electronic property and nature of complexes were identified by IR, UV-Vis spectra, elemental analysis, X-ray crystallography and cyclic voltammetric methods. The catalytic activity of complexes for epoxidation of styrene with UHP as primary oxidant at minimal temperature (10 C) has been planned. The spectral data of the ligands and their complexes are deliberate in connection with the structural changes which happen due to complex preparation. The electrochemical outcome has good conformability with what suggested for electronic interaction among metal center and ligand by the UV-Vis and IR measurements.

  10. Development and application of high strength ternary boride base cermets

    International Nuclear Information System (INIS)

    Takagi, Ken-ichi

    2006-01-01

    Reaction boronizing sintering is a novel strategy to form a ternary boride coexisting with a metal matrix in a cermet during liquid phase sintering. This new sintering technique has successfully developed world first ternary boride base cermets with excellent mechanical properties such as Mo 2 FeB 2 , Mo 2 NiB 2 and WCoB base ones. In these cermets Mo 2 FeB 2 and Mo 2 NiB 2 base ones consist of a tetragonal M 3 B 2 (M: metal)-type complex boride as a hard phase and a transition metal base matrix. The cermets have already been applied to wear resistant applications such as injection molding machine parts, can making tools, and hot copper extruding dies, etc. This paper focuses on the characteristics, effects of the additional elements on the mechanical properties and structure, and practical applications of the ternary boride base cermets. - Graphical abstract: TRS and hardness of Ni-5B-51Mo-17.5Cr and Ni-5B-51Mo-12.5Cr-5V-xMn mass% cermets as functions of Mn content (Fig. 17)

  11. Phase Equilibria of Sn-Co-Cu Ternary System

    Science.gov (United States)

    Chen, Yu-Kai; Hsu, Chia-Ming; Chen, Sinn-Wen; Chen, Chih-Ming; Huang, Yu-Chih

    2012-10-01

    Sn-Co-Cu ternary alloys are promising lead-free solders, and isothermal sections of Sn-Co-Cu phase equilibria are fundamentally important for the alloys' development and applications. Sn-Co-Cu ternary alloys were prepared and equilibrated at 523 K, 1073 K, and 1273 K (250 °C, 800 °C, and 1000 °C), and the equilibrium phases were experimentally determined. In addition to the terminal solid solutions and binary intermetallic compounds, a new ternary compound, Sn3Co2Cu8, was found. The solubilities of Cu in the α-CoSn3 and CoSn2 phases at 523 K (250 °C) are 4.2 and 1.6 at. pct, respectively, while the Cu solubility in the α-Co3Sn2 phase is as high as 20.0 at. pct. The Cu solubility increases with temperature and is around 30.0 at. pct in the β-Co3Sn2 at 1073 K (800 °C). The Co solubility in the η-Cu6Sn5 phase is also significant and is 15.5 at. pct at 523 K (250 °C).

  12. Phase equilibria of the Mo-Al-Ho ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yitai; Chen, Xiaoxian; Liu, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-08-15

    Investigation into the reactions and phase equilibria of transition metal elements (i.e. Mo, Zr, Cr, V and Ti), Al and rare earths is academically and industrially important for the development of both refractory alloys and lightweight high-temperature materials. In this work, the equilibria of the Mo-Al-Ho ternary system at 773 K have been determined by using X-ray powder diffraction and scanning electron microscopy equipped with energy dispersive X-ray analysis. A new ternary phase Al{sub 4}Mo{sub 2}Ho has been found and the other ternary phase Al{sub 43}Mo{sub 4}Ho{sub 6} is observed. Ten binary phases in the Al-Mo and Al-Ho systems, including Al{sub 17}Mo{sub 4} rather than Al{sub 4}Mo, have been determined to exist at 773 K. The homogeneity ranges of AlMo{sub 3} and Al{sub 8}Mo{sub 3} phase are 7.5 at.% and 1 at.%, respectively. According to the phase-disappearing method, the maximum solubility of Al in Mo is about 16 at.%.

  13. Valence band electronic structure of Pd based ternary chalcogenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2016-12-15

    Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

  14. Superconductivity of ternary metal compounds prepared at high pressures

    CERN Document Server

    Shirotani, I

    2003-01-01

    Various ternary metal phosphides, arsenides, antimonides, silicides and germanides have been prepared at high temperatures and high pressures. These ternary metal compounds can be classified into four groups: [1] metal-rich compounds MM' sub 4 X sub 2 and [2] MM'X, [3] non-metal-rich compounds MXX' and [4] MM' sub 4 X sub 1 sub 2 (M and M' = metal element; X and X' = non-metal element). We have studied the electrical and magnetic properties of these materials at low temperatures, and found many new superconductors with the superconducting transition temperature (T sub c) of above 10 K. The metal-rich compound ZrRu sub 4 P sub 2 with a tetragonal structure showed the superconducting transition at around 11 K, and had an upper critical field (H sub c sub 2) of 12.2 tesla (T) at 0 K. Ternary equiatomic compounds ZrRuP and ZrRuSi crystallize in two modifications, a hexagonal Fe sub 2 P-type structure [h-ZrRuP(Si)] and an orthorhombic Co sub 2 P-type structure [o-ZrRuP(Si)]. Both h-ZrRuP and h-ZrRuSi have rather h...

  15. Study on the solid state chemistry of ternary uranium oxides

    International Nuclear Information System (INIS)

    Yamashita, Toshiyuki

    1988-03-01

    With the increase of burnup of uranium oxide fuels, various kinds of fission products are formed, and the oxygen atoms combined with the consumed heavy atoms are freed. The solid state chemical and/or thermodynamic properties of these elements at high temperatures are complex, and have not been well clarified. In the present report, an approach was taken that the chemical interactions between UO 2 and these fission products can be regarded as causing overlapped effects of composing ternary uranium oxides, and formation reactions and phase behavior were studied for several ternary uranium oxides with typical fission product elements such as alkaline earth metals and rare earth elements. Precise determination methods for the composition of ternary uranium oxides were developed. The estimated accuracies for x and y values in M y U 1-y O 2+x were ± 0.006 and ± 0.004, respectively. The thermodynamic properties and the lattice parameters of the phases in the Ca-U-O and Pr-U-O systems were discussed in relation to the composition determined by the methods. Crystal structure analyses of cadmium monouranates were made with X-ray diffraction method. (author) 197 refs

  16. Realizing Ternary Logic in FPGAs for SWL DSP Systems

    Directory of Open Access Journals (Sweden)

    Tayeb Din

    2013-07-01

    Full Text Available Recently SWL (Short Word Length DSP (Digital Signal Processing applications has been proposed to overcome multiplier complexity that is evident in most of the digital applications. These SWL applications have been processed through sigma-delta modulation as a key element. For such applications, adder design plays vital role and can impact upon the chip area and its performance. In this paper, a ternary approach for adder tree has been proposed instead of binary that can accommodate more data with less chip-area at the cost of extra pin. The proposed ternary adder tree has been designed and developed in Quartus-II using three different design strategies namely T-gate (Ternary gate, LUT (Look Up Table and algebraic equations. Through rigorous simulation it was found that T-gate technique results in superior performance, an average of 23.5 and 33% improvement compared to the same adder structure based on Boolean Algebraic Equation and LUT, respectively. The proposed adder design would benefit the efficient implementation of SWL applications.

  17. Ternary fission of 184466,476X formed in U + U collisions

    International Nuclear Information System (INIS)

    Karthikraj, C.; Subramanian, S.; Selvaraj, S.

    2016-01-01

    Recently, the very rare process of nuclear ternary fission has been of great interest in nuclear dynamics. Based on the statistical theory of fission, we discuss here the ternary-fission mass distribution of 184 466,476 X formed in low-energy U + U collisions for different heavy third fragments at T = 1 and 2 MeV. The expected ternary configurations 208 Pb + 208 Pb + 50 Ca and 204 Hg + 204 Hg + 58 Cr are obtained from the ternary fission of 184 466 X at T = 2 MeV. In addition, for both the systems, various possible ternary modes are listed for different heavy third fragments. Our results clearly indicate that the favored ternary configurations have either proton and/or neutron shell closure nucleus as one of their partners. (orig.)

  18. High-field superconductivity in the Nb-Ti-Zr ternary system

    International Nuclear Information System (INIS)

    Ralls, K.M.; Rose, R.M.; Wulff, J.

    1980-01-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 0 K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys

  19. High-field superconductivity in the Nb-Ti-Zr ternary system

    Science.gov (United States)

    Ralls, K. M.; Rose, R. M.; Wulff, J.

    1980-06-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 °K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys.

  20. Zr-Fe-Sn Ternary System Phase Diagrams- New Experimental Results

    International Nuclear Information System (INIS)

    Nieva, N; Gomez, A; Arias, D

    2004-01-01

    New experimental results for the Zr-Fe-Sn ternary system are presented in this paper. The phases present and equilibrium relations for the 900 o C isothermal on the central zone of the Gibbs triangle are analysed. A set of ternary alloys was designed and obtained, and they were analysed by semi quantitative SEM- EDS, XRD, and metallographic samples. The resulting ternary phase diagrams are presented here (JCH)

  1. Experimental study of the ternary Ag-Cu-In phase diagram

    International Nuclear Information System (INIS)

    Bahari, Zahra; Elgadi, Mohamed; Rivet, Jacques; Dugue, Jerome

    2009-01-01

    The phase diagram of the Ag-Cu-In system was investigated using powder X-ray diffraction (XRD), differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). Two isothermal sections (at 510 and 607 deg. C) and 15 isopletic sections were studied. The results showed seven ternary peritectics, one ternary eutectic and one ternary metatectic. A complete reaction scheme was constructed, the valleys were drawn and the liquidus surfaces were derived from DSC data in the entire composition range.

  2. Experimental study of the ternary Ag-Cu-In phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Bahari, Zahra [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France); Laboratoire de chimie du solide mineral (LCSM), Faculte des sciences, Universite Mohamed 1er, Route Sidi Maafa, B.P. 524, Oujda, Maroc (Morocco); Elgadi, Mohamed [Laboratoire de chimie du solide mineral (LCSM), Faculte des sciences, Universite Mohamed 1er, Route Sidi Maafa, B.P. 524, Oujda, Maroc (Morocco); Rivet, Jacques [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France); Dugue, Jerome [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France)], E-mail: jerome.dugue@univ-paris5.fr

    2009-05-27

    The phase diagram of the Ag-Cu-In system was investigated using powder X-ray diffraction (XRD), differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). Two isothermal sections (at 510 and 607 deg. C) and 15 isopletic sections were studied. The results showed seven ternary peritectics, one ternary eutectic and one ternary metatectic. A complete reaction scheme was constructed, the valleys were drawn and the liquidus surfaces were derived from DSC data in the entire composition range.

  3. Double Z-scheme ZnO/ZnS/g-C3N4 ternary structure for efficient photocatalytic H2 production

    Science.gov (United States)

    Dong, Zhifang; Wu, Yan; Thirugnanam, Natarajan; Li, Gonglin

    2018-02-01

    In the present work, a novel ZnO/ZnS/g-C3N4 ternary nanocomposite with double Z-scheme heterojunction has been designed via a two-step facile chemical conversion route. The spherical ZnS nanoparticles were uniformly loaded onto ZnO nanoflowers surface. And then the ZnO/ZnS nanocomposite was further hybridized with g-C3N4 nanosheets. Ternary ZnO/ZnS/g-C3N4 nanocomposite displays the largest specific surface area (about 76.2 m2/g), which provides plentiful activated sites for photocatalytic reaction. Furthermore, the ternary material exhibits the highest methylene blue photodegradation rate of about 0.0218 min-1 and the optimum photocatalytic H2 production (1205 μmol/g) over water splitting at 4 h under solar light irradiation. Moreover, it showed the highest photocurrent effect and the minimum charge-transfer resistance. These results implied that the higher photoactivity of ZnO/ZnS/g-C3N4 nanocomposite could be attributed to the multi-steps charge transfer and effective electron-hole separation in the double Z-scheme system.

  4. Solar Features - Solar Flares

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — A solar flare is a short-lived sudden increase in the intensity of radiation emitted in the neighborhood of sunspots. For many years it was best monitored in the...

  5. Integration of Semiconducting Sulfides for Full-Spectrum Solar Energy Absorption and Efficient Charge Separation.

    Science.gov (United States)

    Zhuang, Tao-Tao; Liu, Yan; Li, Yi; Zhao, Yuan; Wu, Liang; Jiang, Jun; Yu, Shu-Hong

    2016-05-23

    The full harvest of solar energy by semiconductors requires a material that simultaneously absorbs across the whole solar spectrum and collects photogenerated electrons and holes separately. The stepwise integration of three semiconducting sulfides, namely ZnS, CdS, and Cu2-x S, into a single nanocrystal, led to a unique ternary multi-node sheath ZnS-CdS-Cu2-x S heteronanorod for full-spectrum solar energy absorption. Localized surface plasmon resonance (LSPR) in the nonstoichiometric copper sulfide nanostructures enables effective NIR absorption. More significantly, the construction of pn heterojunctions between Cu2-x S and CdS leads to staggered gaps, as confirmed by first-principles simulations. This band alignment causes effective electron-hole separation in the ternary system and hence enables efficient solar energy conversion. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Influence of electron-donating polymer addition on the performance of polymer solar cells

    International Nuclear Information System (INIS)

    Kim, Youngkyoo; Shin, Minjung; Kim, Hwajeong; Ha, Youri; Ha, Chang-Sik

    2008-01-01

    Here we report the influence of electron-donating polymer addition on the performance of poly(3-hexylthiophene) (P3HT) : 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C 61 (PCBM) solar cells. Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) was chosen as the electron-donating polymer to improve the open circuit voltage (V OC ) due to its higher level of the highest occupied molecular orbital energy compared with P3HT. Results showed that the MDMO-PPV addition led to an improved V OC for ternary blend (P3HT : MDMO-PPV : PCBM) solar cells. In particular, after thermal annealing at 110 deg. C, the short circuit current density of ternary blend solar cells was greatly improved, close to that of comparative binary blend (P3HT : PCBM) solar cells.

  7. Solar storms; Tormentas solares

    Energy Technology Data Exchange (ETDEWEB)

    Collaboration: Pereira Cuesta, S.; Pereira Pagan, B.

    2016-08-01

    Solar storms begin with an explosion, or solar flare, on the surface of the sun. The X-rays and extreme ultraviolet radiation from the flare reach the Earths orbit minutes later-travelling at light speed. The ionization of upper layers of our atmosphere could cause radio blackouts and satellite navigation errors (GPS). Soon after, a wave of energetic particles, electrons and protons accelerated by the explosion crosses the orbit of the Earth, and can cause real and significant damage. (Author)

  8. Photovoltaic cells based on ternary P3HT:PCBM:polymethine dye active layer transparent in the visible range of light

    Energy Technology Data Exchange (ETDEWEB)

    Bliznyuk, Valery N., E-mail: vblizny@clemson.edu [Department of Materials Science and Engineering, Clemson University, Clemson, SC, 29634 (United States); Gasiorowski, Jacek [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Ishchenko, Alexander A.; Bulavko, Gennadiy V. [Institute of Organic Chemistry, National Academy of Sciences of Ukraine, 5 Murmanskaya str., Kiev 02660 (Ukraine); Rahaman, Mahfujur [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Hingerl, Kurt [Center for Interface and Nanoanalytics, Johannes Kepler University, Linz 4040 (Austria); Zahn, Dietrich R.T. [Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz (Germany); Sariciftci, Niyazi S. [Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johannes Kepler University, Linz 4040 (Austria)

    2016-12-15

    Highlights: • Addition of a polymethine dye to P3HT:PCBM bulk-heterojunction (BHJ) films leads to a compositionally induced transparency in the system. • Variation of the complex refractive index in binary and ternary BHJ films has been studied with spectroscopic ellipsometry. • Power conversion efficiency of ternary BHJ solar cells is determined by the dye composition and photodoping. - Abstract: Optical and photovoltaic properties were studied for ternary photovoltaic cells containing a traditional donor-acceptor bulk-heterojunction (BHJ) active layer modified with polymethine dye molecules in a broad range of compositions and wavelengths. An effect of composition induced optical transparency, due to the strong modification of the density of states, was observed for symmetrical compositions with approximately equal amount of components. Based on our spectroscopic ellipsometry and atomic force microscopy (AFM) studies we can suggest that the variation of the refractive index, which is significantly reduced in the visible range for ternary systems, is involved in the physical mechanism of the phenomenon. Despite of an addition of the IR absorbing component (which allows broadening of the absorption band to up to 800 nm) no improvement in the power conversion efficiency (PCE) is observed in comparison to the binary BHJ system (P3HT:PCBM). Nevertheless, we believe that further advance of the efficiency will be possible if the energy levels will be chemically designed to avoid formation of charge traps at the BHJ interface during light excitation. Such fine adjustment of the system should become possible with a proper choice of polymer:dye composition due to a high versatility of the polymethine dyes demonstrated in previous studies.

  9. The C-terminal N-glycosylation sites of the human alpha1,3/4-fucosyltransferase III, -V, and -VI (hFucTIII, -V, adn -VI) are necessary for the expression of full enzyme activity.

    Science.gov (United States)

    Christensen, L L; Jensen, U B; Bross, P; Orntoft, T F

    2000-09-01

    The alpha1,3/4-fucosyltransferases are involved in the synthesis of fucosylated cell surface glycoconjugates. Human alpha1,3/4-fucosyltransferase III, -V, and -VI (hFucTIII, -V, and -VI) contain two conserved C-terminal N-glycosylation sites (hFucTIII: Asn154 and Asn185; hFucTV: Asn167 and Asn198; and hFucTVI: Asn153 and Asn184). In the present study, we have analyzed the functional role of these potential N-glycosylation sites, laying the main emphasis on the sites in hFucTIII. Tunicamycin treatment completely abolished hFucTIII enzyme activity while castanospermine treatment diminished hFucTIII enzyme activity to approximately 40% of the activity of the native enzyme. To further analyze the role of the conserved N-glycosylation sites in hFucTIII, -V, and -VI, we made a series of mutant genomic DNAs in which the asparagine residues in the potential C-terminal N-glycosylation sites were replaced by glutamine. Subsequently, the hFucTIII, -V, and -VI wild type and the mutants were expressed in COS-7 cells. All the mutants exhibited lower enzyme activity than the wild type and elimination of individual sites had different effects on the activity. The mutations did not affect the protein level of the mutants in the cells, but reduced the molecular mass as predicted. Kinetic analysis of hFucTIII revealed that lack of glycosylation at Asn185 did not change the Km values for the oligosaccharide acceptor and the nucleotide sugar donor. The present study demonstrates that hFucTIII, -V, and -VI require N-glycosylation at the two conserved C-terminal N-glycosylation sites for expression of full enzyme activity.

  10. Efficient hydrogen evolution catalysis using ternary pyrite-type cobalt phosphosulphide

    KAUST Repository

    Cabán-Acevedo, Miguel

    2015-09-14

    The scalable and sustainable production of hydrogen fuel through water splitting demands efficient and robust Earth-abundant catalysts for the hydrogen evolution reaction (HER). Building on promising metal compounds with high HER catalytic activity, such as pyrite structure cobalt disulphide (CoS 2), and substituting non-metal elements to tune the hydrogen adsorption free energy could lead to further improvements in catalytic activity. Here we present a combined theoretical and experimental study to establish ternary pyrite-type cobalt phosphosulphide (CoPS) as a high-performance Earth-abundant catalyst for electrochemical and photoelectrochemical hydrogen production. Nanostructured CoPS electrodes achieved a geometrical catalytic current density of 10 mA cm at overpotentials as low as 48mV, with outstanding long-term operational stability. Integrated photocathodes of CoPS on n -p-p silicon micropyramids achieved photocurrents up to 35 mA cm at 0 V versus the reversible hydrogen electrode (RHE), onset photovoltages as high as 450 mV versus RHE, and the most efficient solar-driven hydrogen generation from Earth-abundant systems.

  11. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  12. Ternary equilibria in bismuth--indium--lead alloys

    International Nuclear Information System (INIS)

    Liao, K.C.; Johnson, D.L.; Nelson, R.C.

    1975-01-01

    The liquidus surface is characterized by three binary equilibria. One binary extends from the Pb--Bi peritectic to the Pb--In peritectic. The other two extend from In--Bi eutectics, merge at 50 at. percent Bi and 30 at. percent Pb, and end at the Bi--Pb eutectic. Based on analysis of ternary liquidus contours and vertical sections, it is suggested that solidification for high lead and very high indium alloys occurs from two-phase equilibria. Solidification from all other alloys occurs from three-phase equilibria. Four-phase solidification does not occur in this system

  13. Paramagnetic centers in ternary coordinated oxygen in beryllium aluminosilicate glasses

    International Nuclear Information System (INIS)

    Blaginina, L.A.; Zatsepin, A.F.; Dmitriev, I.A.

    1988-01-01

    Glasses of the composition 3BeO-Al 2 O 3 -6SiO 2 containing a homogenizing additive of MgF 2 were synthesized. The ESR spectra of x-ray and gamma irradiated specimens were determined. A complex ESR spectrum arose in the original glass. The ESR spectrum of the gamma-irradiated polycrystalline Be 2 SiO 4 glass was almost identical to the crystallized glass. It was shown that the presence of beryllium atoms in the composition of silicate glasses created the conditions for the formation of structural fragments with ternary coordinated oxygen

  14. Implementation of DFT application on ternary optical computer

    Science.gov (United States)

    Junjie, Peng; Youyi, Fu; Xiaofeng, Zhang; Shuai, Kong; Xinyu, Wei

    2018-03-01

    As its characteristics of huge number of data bits and low energy consumption, optical computing may be used in the applications such as DFT etc. which needs a lot of computation and can be implemented in parallel. According to this, DFT implementation methods in full parallel as well as in partial parallel are presented. Based on resources ternary optical computer (TOC), extensive experiments were carried out. Experimental results show that the proposed schemes are correct and feasible. They provide a foundation for further exploration of the applications on TOC that needs a large amount calculation and can be processed in parallel.

  15. Plutonium microstructures. Part 2. Binary and ternary alloys

    International Nuclear Information System (INIS)

    Cramer, E.M.; Bergin, J.B.

    1983-12-01

    This report is the second of three parts that exhibit illustrations of inclusions in plutonium metal from inherent and tramp impurities, of intermetallic and nonmetallic constituents from alloy additions, and of the effects of thermal and mechanical treatments. This part includes illustrations of the microstructures in binary cast alloys and a few selected ternary alloys that result from measured additions of diluent elements, and of the microconstituents that are characteristic of phase fields in extended alloy systems. Microhardness data are given and the etchant used in the preparation of each sample is described

  16. Infrared target recognition based on improved joint local ternary pattern

    Science.gov (United States)

    Sun, Junding; Wu, Xiaosheng

    2016-05-01

    This paper presents a simple, efficient, yet robust approach, named joint orthogonal combination of local ternary pattern, for automatic forward-looking infrared target recognition. It gives more advantages to describe the macroscopic textures and microscopic textures by fusing variety of scales than the traditional LBP-based methods. In addition, it can effectively reduce the feature dimensionality. Further, the rotation invariant and uniform scheme, the robust LTP, and soft concave-convex partition are introduced to enhance its discriminative power. Experimental results demonstrate that the proposed method can achieve competitive results compared with the state-of-the-art methods.

  17. Quantifying the energetics of cooperativity in a ternary protein complex

    DEFF Research Database (Denmark)

    Andersen, Peter S; Schuck, Peter; Sundberg, Eric J

    2002-01-01

    and mathematical modeling to describe the energetics of cooperativity in a trimolecular protein complex. As a model system for quantifying cooperativity, we studied the ternary complex formed by the simultaneous interaction of a superantigen with major histocompatibility complex and T cell receptor, for which...... a structural model is available. This system exhibits positive and negative cooperativity, as well as augmentation of the temperature dependence of binding kinetics upon the cooperative interaction of individual protein components in the complex. Our experimental and theoretical analysis may be applicable...... to other systems involving cooperativity....

  18. Ternary system of cesium, rubidium and lead iodides

    International Nuclear Information System (INIS)

    Volchanskaya, V.V.; Dunaeva, T.I.; Il'yasov, I.I.

    1990-01-01

    Meltability diagram of ternary system (CsI) 2 -(RbI) 2 -PbI 2 has been studied. The liquidus of the given system consists of crystallization fields of solid solutions (CsI-RbI) and (CsI·PbI 2 -RbI-PbI 2 ), fields of incongruently melting compounds 9RbI·PbI 2 , 4CsI·PbI 2 and field of PbI 2 component. In the system two nonvariant points at 410 and 380 deg C are detected

  19. First principle study of cubic ScGaN ternaries

    International Nuclear Information System (INIS)

    Adli, W.; Mecheref, R.; Sekkal, N.; Tair, F.; Amrani, B.

    2008-08-01

    The electronic properties of the Sc x Ga1- x N ternary alloy are investigated. The transition from rocksalt (B1) to zinc blende (B3) structure is found to occur rapidly after incorporating just a small fraction (less than 1%) of Ga. In the present paper, the first principles method the full potential linear muffin-tin orbitals method (FPLMTO) in its atomic sphere approximation (ASA) coupled to the technique of the empty spheres is employed. Our results concerning the electronic properties are different from those reported in literature. (author)

  20. Phase diagram of the ternary Zr-Ti-Sn system

    International Nuclear Information System (INIS)

    Arias, D.; Gonzalez Camus, M.

    1987-01-01

    It is well known that Ti stabilizes the high temperature cubic phase of Zr and that Sn stabilizes the low temperature hexagonal phase of Zr. The effect of Sn on the Zr-Ti diagram has been studied in the present paper. Using high purity metals, nine different alloys have been prepared, with 4-32 at % Ti, 0.7-2.2 at % Sn and Zr till 100%. Resistivity and optical and SEM metallography techniques have been employed. Effect of some impurities have been analyzed. The results are discussed and different isothermic sections of the ternary Zr-Ti-Sn diagram are presented. (Author) [es

  1. Optimization pathways to improve GaInP/GaInAs/Ge triple junction solar cells for CPV applications

    OpenAIRE

    Barrutia Poncela, Laura

    2017-01-01

    La tecnología de concentración fotovoltaica (en inglés, Concentration Photovoltaics, CPV) ha experimentado un intenso desarrollo desde principios de los años 2000. En particular, las células solares de triple unión (GaInP/GaInAs/Ge) ajustadas en red siguen dominando el mercado CPV. Esta tesis pretende contribuir en la investigación de este tipo de célula multiunión desarrollada previamente en el Grupo de Semiconductores III-V del Instituto de Energía Solar de la Universidad Politécnica de Mad...

  2. Asymmetric supercapacitors with metal-like ternary selenides and porous graphene electrodes

    KAUST Repository

    Xia, Chuan; Jiang, Qiu; Zhao, Chao; Beaujuge, Pierre; Alshareef, Husam N.

    2016-01-01

    nanostructured ternary nickel cobalt selenides result in a much higher areal capacitance (2.33 F cm−2 at 4 mA cm−2), better rate performance and cycling stability than their binary selenide equivalents, and other ternary oxides and chalcogenides. Those hybrid

  3. Using a Ternary Diagram to Display a System's Evolving Energy Distribution

    Science.gov (United States)

    Brazzle, Bob; Tapp, Anne

    2016-01-01

    A ternary diagram is a graphical representation used for systems with three components. They are familiar to mineralogists (who typically use them to categorize varieties of solid solution minerals such as feldspar) but are not yet widely used in the physics community. Last year the lead author began using ternary diagrams in his introductory…

  4. Detection of the ternary alpha particles from 252Cr spontaneous source with timepix pixeleted detector

    International Nuclear Information System (INIS)

    Ahmadov, G.S.; Telezhnikov, S.A.; Ahmadov, F.I.; Garibov, A.A.; Ahmadov, G.S.; Ahmadov, F.I.; Granja, C.; Pospisil, S.

    2013-01-01

    A third charged particle is emitted besides the two main fission fragments in ternary fission. Because of the ternary fission is a unique tool to explore the dynamics and structure of atomic nuclei by probing the fissioning system near the scission point and observing fissioning reaction and decay mechanisms main tool to study nuclear fission processes

  5. Experimental investigation of phase equilibria in the Co-W-V ternary system

    International Nuclear Information System (INIS)

    Liu Xingjun; Zhu Yihong; Yu Yan; Wang Cuiping

    2011-01-01

    Highlights: → Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined. → No ternary compound was found in the Co-W-V ternary system. → A stable liquid miscibility gap is newly discovered in the Co-W-V ternary system. → This work is of great essence to establish the thermodynamic database for the Co-based alloys. - Abstract: The phase equilibria in the Co-W-V ternary system were experimentally investigated by optical microscopy (OM), electron probe microanalysis (EPMA) and X-ray diffraction (XRD) on the equilibrated alloys. Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined, and no ternary compound was found in this system. In addition, a novel phenomena induced by the liquid phase separation in the Co-W-V alloys was firstly discovered, suggesting that a stable liquid miscibility gap exists in the Co-W-V ternary system. The newly determined phase equilibria and firstly discovered phase separation phenomena in the Co-W-V system will provide important information for the development of Co-W based alloys.

  6. Multicomponent ternary cocrystals of the sulfonamide group with pyridine-amides and lactams.

    Science.gov (United States)

    Bolla, Geetha; Nangia, Ashwini

    2015-11-04

    SMBA was selected as a bifunctional sulfa drug to design ternary cocrystals with pyridine amides and lactam coformers. Supramolecular assembly of five ternary cocrystals of p-sulfonamide benzoic acid with nicotinamide and 2-pyridone is demonstrated and reproducible heterosynthons are identified for crystal engineering.

  7. Asymmetry in ternary fission induced by polarized neutrons and fission mechanism

    International Nuclear Information System (INIS)

    Bunakov, V.E.; Gennenvajn, F.; Dzhessinger, P.; Mutterer, M.; Petrov, G.A.

    2003-01-01

    The results of measuring the P-odd, P-even (right-left) and T-odd asymmetries of the charged particles emission in the double and ternary fission, induced by the polarized neutrons, are considered. It is shown, what kind of information on the mechanism of the ternary nuclear fission may be obtained from the theoretical analysis of these data [ru

  8. Measurement of p-odd asymmetry of fragment escape in ternary fission of plutonium 239

    International Nuclear Information System (INIS)

    Belozerov, A.V.; Vodennikov, B.D.; Danilyan, G.V.; Korobkina, E.I.; Pavlov, V.S.; Pevchev, Yu.F.; Sadchikov, A.G.

    1988-01-01

    Values of effects of parity nonconservation in binary and ternary fission of plutonium 239 by polarized thermal neutrons were measured simultaneously. The ratio of asymmetry coefficient (AC) of ternary fission to the AC of binary fission was equal to 0.67+-0.20. The obtained result testifies to insignificant disagreement of AC of fragment escape in studied fission types

  9. INTERVAL-VALUED INTUITIONISTIC FUZZY BI-IDEALS IN TERNARY SEMIRINGS

    Directory of Open Access Journals (Sweden)

    D. KRISHNASWAMY

    2016-04-01

    Full Text Available In this paper we introduce the notions of interval-valued fuzzy bi-ideal, interval-valued anti fuzzy bi-ideal and interval-valued intuitionistic fuzzy bi-ideal in ternary semirings and some of the basic properties of these ideals are investigated. We also introduce normal interval-valued intuitionistic fuzzy ideals in ternary semirings.

  10. Solar Energy.

    Science.gov (United States)

    Eaton, William W.

    Presented is the utilization of solar radiation as an energy resource principally for the production of electricity. Included are discussions of solar thermal conversion, photovoltic conversion, wind energy, and energy from ocean temperature differences. Future solar energy plans, the role of solar energy in plant and fossil fuel production, and…

  11. Solar energy

    Science.gov (United States)

    Rapp, D.

    1981-01-01

    The book opens with a review of the patterns of energy use and resources in the United States, and an exploration of the potential of solar energy to supply some of this energy in the future. This is followed by background material on solar geometry, solar intensities, flat plate collectors, and economics. Detailed attention is then given to a variety of solar units and systems, including domestic hot water systems, space heating systems, solar-assisted heat pumps, intermediate temperature collectors, space heating/cooling systems, concentrating collectors for high temperatures, storage systems, and solar total energy systems. Finally, rights to solar access are discussed.

  12. Solar Combisystems

    DEFF Research Database (Denmark)

    Thür, Alexander

    2006-01-01

    This note first introduces what is a solar combisystem, the structure how a solar combisystem is build up and what are criteria’s to evaluate a solar combisystem concept. Further on the main components of a solar combisystem, the main characteristics and possible advantages and disadvantages...... compared to each other are described. It is not the goal of this note to explain the technical details how to design all components of a solar combisystem. This is done during other lectures of the solar course and in other basic courses as well. This note tries to explain how a solar combisystem...

  13. Energy dissipation in the process of ternary fission in heavy nuclear reaction

    International Nuclear Information System (INIS)

    Li Xian; Wang Chengqian; Yan Shiwei

    2015-01-01

    We studied the evolution of the collective motion, interaction potential, the total kinetic and excitation energies in ternary fissions of 197 Au + 197 Au system at 15 MeV/u, and discussed energy dissipation of this reaction. Through the comparison with energy-angle correlation data in binary fissions, we preliminarily concluded that the rst fission of ternary fission was an extreme deep-inelastic process. We further analyzed the correlation of the total kinetic energy with impact parameters in both binary and ternary reactions, and found that the total energy of binary reactions systems was lost about 150 MeV more than ternary fission with small impact parameters, and with larger impact parameters the total energy of ternary reactions were lost 300 MeV more than binary reactions. (authors)

  14. First-principles study of ternary fcc solution phases from special quasirandom structures

    International Nuclear Information System (INIS)

    Shin Dongwon; Wang Yi; Liu Zikui; Walle, Axel van de

    2007-01-01

    In the present work, ternary special quasirandom structures (SQSs) for a fcc solid solution phase are generated at different compositions, x A =x B =x C =(1/3) and x A =(1/2), x B =x C =(1/4), whose correlation functions are satisfactorily close to those of a random fcc solution. The generated SQSs are used to calculate the mixing enthalpy of the fcc phase in the Ca-Sr-Yb system. It is observed that first-principles calculations of all the binary and ternary SQSs in the Ca-Sr-Yb system exhibit very small local relaxation. It is concluded that the fcc ternary SQSs can provide valuable information about the mixing behavior of the fcc ternary solid solution phase. The SQSs presented in this work can be widely used to study the behavior of ternary fcc solid solutions

  15. Solar Systems

    Science.gov (United States)

    1979-01-01

    The solar collectors shown are elements of domestic solar hot water systems produced by Solar One Ltd., Virginia Beach, Virginia. Design of these systems benefited from technical expertise provided Solar One by NASA's Langley Research Center. The company obtained a NASA technical support package describing the d e sign and operation of solar heating equipment in NASA's Tech House, a demonstration project in which aerospace and commercial building technology are combined in an energy- efficient home. Solar One received further assistance through personal contact with Langley solar experts. The company reports that the technical information provided by NASA influenced Solar One's panel design, its selection of a long-life panel coating which increases solar collection efficiency, and the method adopted for protecting solar collectors from freezing conditions.

  16. Solar radiophysics

    International Nuclear Information System (INIS)

    McLean, D.J.; Labrum, N.R.

    1985-01-01

    This book treats all aspects of solar radioastronomy at metre wavelengths, particularly work carried out on the Australian radioheliograph at Culgoora, with which most of the authors have been associated in one way or another. After an introductory section on historical aspects, the solar atmosphere, solar flares, and coronal radio emission, the book deals with instrumentation, theory, and details of observations and interpretations of the various aspects of metrewave solar radioastronomy, including burst types, solar storms, and the quiet sun. (U.K.)

  17. Genetic Synthesis of New Reversible/Quantum Ternary Comparator

    Directory of Open Access Journals (Sweden)

    DEIBUK, V.

    2015-08-01

    Full Text Available Methods of quantum/reversible logic synthesis are based on the use of the binary nature of quantum computing. However, multiple-valued logic is a promising choice for future quantum computer technology due to a number of advantages over binary circuits. In this paper we have developed a synthesis of ternary reversible circuits based on Muthukrishnan-Stroud gates using a genetic algorithm. The method of coding chromosome is presented, and well-grounded choice of algorithm parameters allowed obtaining better circuit schemes of one- and n-qutrit ternary comparators compared with other methods. These parameters are quantum cost of received reversible devices, delay time and number of constant input (ancilla lines. Proposed implementation of the genetic algorithm has led to reducing of the device delay time and the number of ancilla qutrits to 1 and 2n-1 for one- and n-qutrits full comparators, respectively. For designing of n-qutrit comparator we have introduced a complementary device which compares output functions of 1-qutrit comparators.

  18. Halo Formation During Solidification of Refractory Metal Aluminide Ternary Systems

    Science.gov (United States)

    D'Souza, N.; Feitosa, L. M.; West, G. D.; Dong, H. B.

    2018-02-01

    The evolution of eutectic morphologies following primary solidification has been studied in the refractory metal aluminide (Ta-Al-Fe, Nb-Al-Co, and Nb-Al-Fe) ternary systems. The undercooling accompanying solid growth, as related to the extended solute solubility in the primary and secondary phases can be used to account for the evolution of phase morphologies during ternary eutectic solidification. For small undercooling, the conditions of interfacial equilibrium remain valid, while in the case of significant undercooling when nucleation constraints occur, there is a departure from equilibrium leading to unexpected phases. In Ta-Al-Fe, an extended solubility of Fe in σ was observed, which was consistent with the formation of a halo of μ phase on primary σ. In Nb-Al-Co, a halo of C14 is formed on primary CoAl, but very limited vice versa. However, in the absence of a solidus projection it was not possible to definitively determine the extended solute solubility in the primary phase. In Nb-Al-Fe when nucleation constraints arise, the inability to initiate coupled growth of NbAl3 + C14 leads to the occurrence of a two-phase halo of C14 + Nb2Al, indicating a large undercooling and departure from equilibrium.

  19. Face Liveness Detection Using Dynamic Local Ternary Pattern (DLTP

    Directory of Open Access Journals (Sweden)

    Sajida Parveen

    2016-05-01

    Full Text Available Face spoofing is considered to be one of the prominent threats to face recognition systems. However, in order to improve the security measures of such biometric systems against deliberate spoof attacks, liveness detection has received significant recent attention from researchers. For this purpose, analysis of facial skin texture properties becomes more popular because of its limited resource requirement and lower processing cost. The traditional method of skin analysis for liveness detection was to use Local Binary Pattern (LBP and its variants. LBP descriptors are effective, but they may exhibit certain limitations in near uniform patterns. Thus, in this paper, we demonstrate the effectiveness of Local Ternary Pattern (LTP as an alternative to LBP. In addition, we adopted Dynamic Local Ternary Pattern (DLTP, which eliminates the manual threshold setting in LTP by using Weber’s law. The proposed method was tested rigorously on four facial spoof databases: three are public domain databases and the other is the Universiti Putra Malaysia (UPM face spoof database, which was compiled through this study. The results obtained from the proposed DLTP texture descriptor attained optimum accuracy and clearly outperformed the reported LBP and LTP texture descriptors.

  20. Enhanced Light Absorption in Fluorinated Ternary Small-Molecule Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Eastham, Nicholas D. [Department; Dudnik, Alexander S. [Department; Harutyunyan, Boris [Department; Aldrich, Thomas J. [Department; Leonardi, Matthew J. [Department; Manley, Eric F. [Department; Chemical; Butler, Melanie R. [Department; Harschneck, Tobias [Department; Ratner, Mark A. [Department; Chen, Lin X. [Department; Chemical; Bedzyk, Michael J. [Department; Department; Melkonyan, Ferdinand S. [Department; Facchetti, Antonio [Department; Chang, Robert P. H. [Department; Marks, Tobin J. [Department; Department

    2017-06-14

    Using small-molecule donor (SMD) semiconductors in organic photovoltaics (OPVs) has historically afforded lower power conversion efficiencies (PCEs) than their polymeric counterparts. The PCE difference is attributed to shorter conjugated backbones, resulting in reduced intermolecular interactions. Here, a new pair of SMDs is synthesized based on the diketopyrrolopyrrole-benzodithiophene-diketopyrrolopyrrole (BDT-DPP2) skeleton but having fluorinated and fluorinefree aromatic side-chain substituents. Ternary OPVs having varied ratios of the two SMDs with PC61BM as the acceptor exhibit tunable open-circuit voltages (Vocs) between 0.833 and 0.944 V due to a fluorination-induced shift in energy levels and the electronic “alloy” formed from the miscibility of the two SMDs. A 15% increase in PCE is observed at the optimal ternary SMD ratio, with the short-circuit current density (Jsc) significantly increased to 9.18 mA/cm2. The origin of Jsc enhancement is analyzed via charge generation, transport, and diffuse reflectance measurements, and is attributed to increased optical absorption arising from a maximum in film crystallinity at this SMD ratio, observed by grazing incidence wide-angle X-ray scattering.

  1. A ternary logic model for recurrent neuromime networks with delay.

    Science.gov (United States)

    Hangartner, R D; Cull, P

    1995-07-01

    In contrast to popular recurrent artificial neural network (RANN) models, biological neural networks have unsymmetric structures and incorporate significant delays as a result of axonal propagation. Consequently, biologically inspired neural network models are more accurately described by nonlinear differential-delay equations rather than nonlinear ordinary differential equations (ODEs), and the standard techniques for studying the dynamics of RANNs are wholly inadequate for these models. This paper develops a ternary-logic based method for analyzing these networks. Key to the technique is the realization that a nonzero delay produces a bounded stability region. This result significantly simplifies the construction of sufficient conditions for characterizing the network equilibria. If the network gain is large enough, each equilibrium can be classified as either asymptotically stable or unstable. To illustrate the analysis technique, the swim central pattern generator (CPG) of the sea slug Tritonia diomedea is examined. For wide range of reasonable parameter values, the ternary analysis shows that none of the network equilibria are stable, and thus the network must oscillate. The results show that complex synaptic dynamics are not necessary for pattern generation.

  2. Kinetics of radiation-induced segregation in ternary alloys

    International Nuclear Information System (INIS)

    Lam, N.O.; Kumar, A.; Wiedersich, H.

    1982-01-01

    Model calculations of radiation-induced segregation in ternary alloys have been performed, using a simple theory. The theoretical model describes the coupling between the fluxes of radiation-induced defects and alloying elements in an alloy A-B-C by partitioning the defect fluxes into those occurring via A-, B-, and C-atoms, and the atom fluxes into those taking place via vacancies and interstitials. The defect and atom fluxes can be expressed in terms of concentrations and concentration gradients of all the species present. With reasonable simplifications, the radiation-induced segregation problem can be cast into a system of four coupled partial-differential equations, which can be solved numerically for appropriate initial and boundary conditions. Model calculations have been performed for ternary solid solutions intended to be representative of Fe-Cr-Ni and Ni-Al-Si alloys under various irradiation conditions. The dependence of segregation on both the alloy properties and the irradiation variables, e.g., temperature and displacement rate, was calculated. The sample calculations are in good qualitative agreement with the general trends of radiation-induced segregation observed experimentally

  3. Plotting and Analyzing Data Trends in Ternary Diagrams Made Easy

    Science.gov (United States)

    John, Cédric M.

    2004-04-01

    Ternary plots are used in many fields of science to characterize a system based on three components. Triangular plotting is thus useful to a broad audience in the Earth sciences and beyond. Unfortunately, it is typically the most expensive commercial software packages that offer the option to plot data in ternary diagrams, and they lack features that are paramount to the geosciences, such as the ability to plot data directly into a standardized diagram and the possibility to analyze temporal and stratigraphic trends within this diagram. To address these issues, δPlot was developed with a strong emphasis on ease of use, community orientation, and availability free of charges. This ``freeware'' supports a fully graphical user interface where data can be imported as text files, or by copying and pasting. A plot is automatically generated, and any standard diagram can be selected for plotting in the background using a simple pull-down menu. Standard diagrams are stored in an external database of PDF files that currently holds some 30 diagrams that deal with different fields of the Earth sciences. Using any drawing software supporting PDF, one can easily produce new standard diagrams to be used with δPlot by simply adding them to the library folder. An independent column of values, commonly stratigraphic depths or ages, can be used to sort the data sets.

  4. Electric dipole (hyper)polarizabilities of selected X2Y2 and X3Y3 (X = Al, Ga, In and Y = P, As): III-V semiconductor clusters. An ab initio comparative study.

    Science.gov (United States)

    Karamanis, Panaghiotis; Pouchan, Claude; Leszczynski, Jerzy

    2008-12-25

    A systematic ab initio comparative study of the (hyper)polarizabilities of selected III-V stoichiometric semiconductor clusters has been carried out. Our investigation focuses on the ground state structures of the dimers and on two dissimilar trimer configurations of aluminum, gallium, indium phosphide and arsenide. The basis set effect on both the polarizabilities and hyperpolarizabilities of the studied systems has been explicitly taken into account relying on the augmented correlation consistent aug-cc-pVnZ (n = D, T, Q, and 5) basis sets series. In addition, a rough estimation of the effects of the relativistic effects on the investigated properties is provided by extension of the study to include calculations performed with relativistic electron core potentials (or pseudopotentials). Electron correlation effects have been estimated utilizing methods of increasing predictive reliability, e.g., the Møller-Plesset many body perturbation theory and the couple cluster approach. Our results reveal that in the considered semiconductor species the Group III elements (Al, Ga, In) play a vital role on the values of their relative (hyper)polarizability. At all levels of theory employed the most hyperpolarizable clusters are the indium derivatives while the aluminum arsenide clusters also exhibit high, comparable hyperpolarizabilities. The less hyperpolarizable species are those composed of gallium and this is associated with the strong influence of the nuclear charge on the valence electrons of Ga due to the poor shielding that is provided by the semicore d electrons. In addition, the analysis of the electronic structure and the hyperpolarizability magnitudes reveals that clusters, in which their bonding is characterized by strong electron transfer from the electropositive to the electronegative atoms, are less hyperpolarizable than species in which the corresponding electron transfer is weaker. Lastly, from the methodological point of view our results point out that

  5. Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

    Science.gov (United States)

    Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

    1998-01-01

    A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eVternary or quaternary III-V semiconductor active layers.

  6. Evaluation of ternary blended cements for use in transportation concrete structures

    Science.gov (United States)

    Gilliland, Amanda Louise

    This thesis investigates the use of ternary blended cement concrete mixtures for transportation structures. The study documents technical properties of three concrete mixtures used in federally funded transportation projects in Utah, Kansas, and Michigan that used ternary blended cement concrete mixtures. Data were also collected from laboratory trial batches of ternary blended cement concrete mixtures with mixture designs similar to those of the field projects. The study presents the technical, economic, and environmental advantages of ternary blended cement mixtures. Different barriers of implementation for using ternary blended cement concrete mixtures in transportation projects are addressed. It was concluded that there are no technical, economic, or environmental barriers that exist when using most ternary blended cement concrete mixtures. The technical performance of the ternary blended concrete mixtures that were studied was always better than ordinary portland cement concrete mixtures. The ternary blended cements showed increased durability against chloride ion penetration, alkali silica reaction, and reaction to sulfates. These blends also had less linear shrinkage than ordinary portland cement concrete and met all strength requirements. The increased durability would likely reduce life cycle costs associated with concrete pavement and concrete bridge decks. The initial cost of ternary mixtures can be higher or lower than ordinary portland cement, depending on the supplementary cementitious materials used. Ternary blended cement concrete mixtures produce less carbon dioxide emissions than ordinary portland cement mixtures. This reduces the carbon footprint of construction projects. The barriers associated with implementing ternary blended cement concrete for transportation projects are not significant. Supplying fly ash returns any investment costs for the ready mix plant, including silos and other associated equipment. State specifications can make

  7. Quantum transport in III-V-semiconductor nanocolumns; Quantentransport in III-V-Halbleiternanosaeulen

    Energy Technology Data Exchange (ETDEWEB)

    Wensorra, Jakob

    2009-03-20

    The goal of this work has been to investigate und understand the electronic transport properties of vertical GaAs/AlAs nanocolumn resonant tunneling diodes (RTDs) and field effect transistors (RTTs) as well as of vertical InAs nanocolumn phase interference diodes. Besides the fabrication and electrical characterization of the devices, numerical calculations, simulations and quantum transport models represent the second important part of the work. GaAs/AlAs and InAs nanocolumns with lateral dimensions down to 30 nm have been processed by top-down approach. Room temperature DC electrical measurements on the nano-RTDs show a distinct negative differential resistance in the I-V characteristics for devices down to 30 nm lateral dimension. The miniaturization of the RTDs leads to the degradation of the transport properties, especially of the peak to valley current ratio (PVR), due to the increased surface scattering. Apart from the main current peak, new substructures can be observed in the I-V characteristics. These are shoulder like features for columns with diameters between 80 nm and 100 nm but become clear peaks when the column diameters are in the 55-75 nm range. For sub-65 nm column lateral dimensions, a strong increase of the PVR and a sharp single peak is observed. A local maximum of the PVR of 3 is reached for columns with 50 nm diameter. The sub-40 nm devices show only space charge limited currents in the I-V characteristics. This behavior can be shifted to smaller or larger diameters by increasing or reduction of the channel doping. For the smallest nanocolumns the lateral quantum confinement, caused by the low dimensionality of the system, leads to the formation of a 3D quantum-point-contact (QPC) in front of the DBQW structure. The quantization in this QPC depends on the column diameter and for a 50 nm column it exceeds the room temperature thermal broadening of the Fermi distribution function of about 25 meV. The measurements of the nano-RTTs indicate a good control of the device current by the gate voltage, without gate leakage. The peak current swing factor (the ratio between peak currents corresponding to the limits of a certain interval of the gate voltage) is about 3 for 150 nm diameter nano-RTTs but reach 6 for 60 nm diameter nano-RTTs (functionality based on the quantum collimation effect). Apart from GaAs/AlAs nanocolumns, InAs nanocolumns have been investigated as well. Nano-diodes were characterized by DC room temperature measurements and low temperature magneto-transport measurements. At room temperature, a linear behavior is observed in the I-V characteristics. Periodic oscillations of the resistance were measured by varying magnetic field at low temperatures. (orig.)

  8. Sequential character of low-energy ternary and quaternary nuclear fission

    Energy Technology Data Exchange (ETDEWEB)

    Kadmensky, S. G., E-mail: kadmensky@phys.vsu.ru; Bulychev, A. O. [Voronezh State University (Russian Federation)

    2016-09-15

    An analysis of low-energy true ternary (quaternary) nuclear fission leads to the conclusion that these fission modes have a sequential two-step (three-step) character such that the emission of a third particle (third and fourth particles) and the separation of fission fragments occur at distinctly different instants, in contrast to the simultaneous emergence of all fission products in the case of onestep ternary (quaternary) fission. This conclusion relies on the following arguments. First, the emission of a third particle (third and fourth particles) from a fissile nucleus is due to a nonevaporative mechanism associated with a nonadiabatic character of the collective deformation motion of this nucleus at the stages preceding its scission. Second, the axial symmetry of the deformed fissile compound nucleus and the direction of its symmetry axis both remain unchanged at all stages of ternary (quaternary) fission. This circumstancemakes it possible to explain themechanism of the appearance of observed anisotropies and T — odd asymmeries in the angular distributions of products of ternary (quaternary) nuclear fission. Third, the T —odd asymmetry discovered experimentally in ternary nuclear fission induced by cold polarized neutrons obeys the T —invariance condition only in the case of a sequential two-step (three-step) character of true ternary (quaternary) nuclear fission. At the same time, this asymmetry is not a T —invariant quantity in the case of the simultaneous emission of products of true ternary (quaternary) nuclear fission from the fissile compound nucleus.

  9. Sequential character of low-energy ternary and quaternary nuclear fission

    International Nuclear Information System (INIS)

    Kadmensky, S. G.; Bulychev, A. O.

    2016-01-01

    An analysis of low-energy true ternary (quaternary) nuclear fission leads to the conclusion that these fission modes have a sequential two-step (three-step) character such that the emission of a third particle (third and fourth particles) and the separation of fission fragments occur at distinctly different instants, in contrast to the simultaneous emergence of all fission products in the case of onestep ternary (quaternary) fission. This conclusion relies on the following arguments. First, the emission of a third particle (third and fourth particles) from a fissile nucleus is due to a nonevaporative mechanism associated with a nonadiabatic character of the collective deformation motion of this nucleus at the stages preceding its scission. Second, the axial symmetry of the deformed fissile compound nucleus and the direction of its symmetry axis both remain unchanged at all stages of ternary (quaternary) fission. This circumstancemakes it possible to explain themechanism of the appearance of observed anisotropies and T — odd asymmeries in the angular distributions of products of ternary (quaternary) nuclear fission. Third, the T —odd asymmetry discovered experimentally in ternary nuclear fission induced by cold polarized neutrons obeys the T —invariance condition only in the case of a sequential two-step (three-step) character of true ternary (quaternary) nuclear fission. At the same time, this asymmetry is not a T —invariant quantity in the case of the simultaneous emission of products of true ternary (quaternary) nuclear fission from the fissile compound nucleus.

  10. He and Be ternary spontaneous fission of sup 2 sup 5 sup 2 Cf

    CERN Document Server

    Hwang, J K; Ramayya, A V; Hamilton, J H

    2002-01-01

    Ternary and binary fission studies of sup 2 sup 5 sup 2 Cf have been carried out by using the Gammasphere detector array with light charged particle (LCD) detectors. The relative sup 4 He and sup 5 He ternary fission yields were determined. The kinetic energies of the sup 5 He and sup 4 He ternary particles were found to be approximately 11 and 16 MeV, respectively. The sup 5 He particles contribute 10-20 % to the total observed alpha ternary yield. The data indicate that in nuclei with octupole deformations the population for the negative parity bands might be enhanced in the alpha ternary fission. >From LCP-gamma double gated spectra, neutron multiplicity distributions for alpha ternary fission pairs were measured. The average neutron multiplicity decreases about 0.7 AMU in going from the binary to alpha ternary fission in the approximately same mass splittings (104-146). From the analysis of the gamma-gamma matrix gated on the sup 1 sup 0 Be particles, the two fragment pairs of sup 1 sup 3 sup 8 Xe - sup 1...

  11. Solar energy

    International Nuclear Information System (INIS)

    Kruisheer, N.

    1992-01-01

    In five brief articles product information is given on solar energy applications with special attention to the Netherlands. After an introduction on solar energy availability in the Netherlands the developments in solar boiler techniques are dealt with. Solar water heaters have advantages for the environment, and government subsidies stimulate different uses of such water heaters. Also the developments of solar cells show good prospects, not only for developing countries, but also for the industrialized countries. In brief the developments in solar energy storage and the connection of solar equipment to the grid are discussed. Finally attention is paid to the applications of passive solar energy in the housing construction, the use of transparent thermal insulation and the developments of translucent materials. 18 figs., 18 ills

  12. Solar Imagery

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of solar photographic and illustrated datasets contributed by a number of national and private solar observatories located worldwide....

  13. Solar Features

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of solar feature datasets contributed by a number of national and private solar observatories located worldwide.

  14. Solar Indices

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  15. Quantum error-correcting code for ternary logic

    Science.gov (United States)

    Majumdar, Ritajit; Basu, Saikat; Ghosh, Shibashis; Sur-Kolay, Susmita

    2018-05-01

    Ternary quantum systems are being studied because they provide more computational state space per unit of information, known as qutrit. A qutrit has three basis states, thus a qubit may be considered as a special case of a qutrit where the coefficient of one of the basis states is zero. Hence both (2 ×2 ) -dimensional and (3 ×3 ) -dimensional Pauli errors can occur on qutrits. In this paper, we (i) explore the possible (2 ×2 ) -dimensional as well as (3 ×3 ) -dimensional Pauli errors in qutrits and show that any pairwise bit swap error can be expressed as a linear combination of shift errors and phase errors, (ii) propose a special type of error called a quantum superposition error and show its equivalence to arbitrary rotation, (iii) formulate a nine-qutrit code which can correct a single error in a qutrit, and (iv) provide its stabilizer and circuit realization.

  16. Ternary ceramic alloys of Zr-Ce-Hf oxides

    Science.gov (United States)

    Becher, P.F.; Funkenbusch, E.F.

    1990-11-20

    A ternary ceramic alloy is described which produces toughening of zirconia and zirconia composites through the stress transformation from tetragonal phase to monoclinic phase. This alloy, having the general formula Ce[sub x]Hf[sub y]Zr[sub 1[minus]x[minus]y]O[sub 2], is produced through the addition of appropriate amounts of ceria and hafnia to the zirconia. Typically, improved toughness is achieved with about 5 to about 15 mol % ceria and up to about 40 mol % hafnia. The preparation of alloys of these compositions are given together with data as to the densities, tetragonal phase content, hardness and fracture toughness. The alloys are useful in preparing zirconia bodies as well as reinforcing ceramic composites. 1 fig.

  17. Hardware emulation of Memristor based Ternary Content Addressable Memory

    KAUST Repository

    Bahloul, Mohamed A.

    2017-12-13

    MTCAM (Memristor Ternary Content Addressable Memory) is a special purpose storage medium in which data could be retrieved based on the stored content. Using Memristors as the main storage element provides the potential of achieving higher density and more efficient solutions than conventional methods. A key missing item in the validation of such approaches is the wide spread availability of hardware emulation platforms that can provide reliable and repeatable performance statistics. In this paper, we present a hardware MTCAM emulation based on 2-Transistors-2Memristors (2T2M) bit-cell. It builds on a bipolar memristor model with storing and fetching capabilities based on the actual current-voltage behaviour. The proposed design offers a flexible verification environment with quick design revisions, high execution speeds and powerful debugging techniques. The proposed design is modeled using VHDL and prototyped on Xilinx Virtex® FPGA.

  18. Normal freezing of ideal ternary systems of the pseudobinary type

    Science.gov (United States)

    Li, C. H.

    1972-01-01

    Perfect liquid mixing but no solid diffusion is assumed in normal freezing. In addition, the molar compositions of the freezing solid and remaining liquid, respectively, follow the solidus and liquidus curves of the constitutional diagram. For the linear case, in which both the liquidus and solidus are perfectly straight lines, the normal freezing equation giving the fraction solidified at each melt temperature and the solute concentration profile in the frozen solid was determined as early as 1902, and has since been repeatedly published. Corresponding equations for quadratic, cubic or higher-degree liquidus and solidus lines have also been obtained. The equation of normal freezing for ideal ternary liquid solutions solidified into ideal solid solutions of the pseudobinary type is given. Sample computations with the use of this new equation were made and are given for the Ga-Al-As system.

  19. Ternary oxide nanostructures and methods of making same

    Science.gov (United States)

    Wong, Stanislaus S [Stony Brook, NY; Park, Tae-Jin [Port Jefferson, NY

    2009-09-08

    A single crystalline ternary nanostructure having the formula A.sub.xB.sub.yO.sub.z, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.

  20. Structural study of the continuous medium of spontaneous ternary emulsions

    International Nuclear Information System (INIS)

    Desforge, Christine

    1993-01-01

    This research thesis addresses the study of the structure of a continuous medium of spontaneous ternary emulsions of oil-in-water type, composed of water and octane, and stabilised by means of a cationic surfactant (DDAB, didodecyldimethyl ammonium bromide). It shows that the kinetic stability is due to electrostatic repulsions between octane drops, and that these repulsions are due to the presence of positive charges on the DDAB mono-layer located at the interface between water and oil. Various aspects are highlighted by neutron and X ray scattering. In this study, the DDAB is replaced by a non-ionic surfactant. Its use results in very steady oil/water emulsions [fr

  1. Hardness and Microstructure of Binary and Ternary Nitinol Compounds

    Science.gov (United States)

    Stanford, Malcolm K.

    2016-01-01

    The hardness and microstructure of twenty-six binary and ternary Nitinol (nickel titanium, nickel titanium hafnium, nickel titanium zirconium and nickel titanium tantalum) compounds were studied. A small (50g) ingot of each compound was produced by vacuum arc remelting. Each ingot was homogenized in vacuum for 48 hr followed by furnace cooling. Specimens from the ingots were then heat treated at 800, 900, 1000 or 1100 degree C for 2 hr followed by water quenching. The hardness and microstructure of each specimen was compared to the baseline material (55-Nitinol, 55 at.% nickel - 45 at.% titanium, after heat treatment at 900 degC). The results show that eleven of the studied compounds had higher hardness values than the baseline material. Moreover, twelve of the studied compounds had measured hardness values greater 600HV at heat treatments from 800 to 900 degree C.

  2. Modeling adsorption of binary and ternary mixtures on microporous media

    DEFF Research Database (Denmark)

    Monsalvo, Matias Alfonso; Shapiro, Alexander

    2007-01-01

    it possible using the same equation of state to describe the thermodynamic properties of the segregated and the bulk phases. For comparison, we also used the ideal adsorbed solution theory (IAST) to describe adsorption equilibria. The main advantage of these two models is their capabilities to predict......The goal of this work is to analyze the adsorption of binary and ternary mixtures on the basis of the multicomponent potential theory of adsorption (MPTA). In the MPTA, the adsorbate is considered as a segregated mixture in the external potential field emitted by the solid adsorbent. This makes...... multicomponent adsorption equilibria on the basis of single-component adsorption data. We compare the MPTA and IAST models to a large set of experimental data, obtaining reasonable good agreement with experimental data and high degree of predictability. Some limitations of both models are also discussed....

  3. Site occupancies in ternary C15 ordered Laves phases

    International Nuclear Information System (INIS)

    Kotula, P.G.; Chu, F.; Thoma, D.J.; Mitchell, T.E.; Anderson, I.M.; Bentley, J.

    1996-01-01

    Site occupancies in three C15-structured AB 2 (X) Laves phases have been determined by Atom Location by CHanneling Enhanced MIcroanalysis (ALCHEMI). In NbCr 2 (V), the results were consistent with exclusive site occupancies of Nb for the A sublattice and Cr and V for the B sublattice. The B-site occupancy of V is not expected from atom size effects alone. In NbCr 2 (Ti), the results were consistent with Ti partitioning mostly to the A sites with some anti-site defects likely. In HfV 2 (Nb), the results were consistent with Nb partitioning between the A and B sites. The results of the ALCHEMI analyses of these ternary C15 Laves phase materials will be discussed with respect to previously determined phase diagrams and first-principles total energy and electronic structure calculations

  4. Quadrupole interaction in ternary chalcopyrite semiconductors experiments and theory

    CERN Document Server

    Dietrich, M; Degering, D; Deicher, M; Kortus, J; Magerle, R; Möller, A; Samokhvalov, V; Unterricker, S; Vianden, R

    2000-01-01

    Electric field gradients have been measured at substitutional lattice sites in ternary semiconductors using perturbed gamma - gamma angular correlation spectroscopy. The experimental results for A/sup I/B/sup III/C/sub 2//sup VI/ chalcopyrite structure compounds and Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ defect chalcopyrites are compared with ab-initio calculations. The latter were carried out with the WIEN code that uses the full potential linearized augmented plane wave method within a density functional theory. The agreement between experiment and theory is in most cases very good. Furthermore, the anion displacements in AgGaX/sub 2/- compounds (X: S, Se, Te) have been determined theoretically by determining the minimum of the total energy of the electrons in an elementary cell. (20 refs).

  5. Superconducting properties of a copper-ternary alloy

    International Nuclear Information System (INIS)

    Sharma, R.G.; Aleksivskii, N.E.

    1975-01-01

    The superconducting properties of a copper-ternary alloy of the type Cu 93 Nb 5 Sn 2 , subjected to a variety of mechanical and heat treatments, are discussed. The as-cast alloy does not turn superconducting down to 4.5K; but the cold-work and subsequent prescribed heat treatments are found to raise the transition temperature Tsub(c) to values as high as 18.1K and the critical current density Jsub(c) (of the Nb 3 Sn formed during annealing) to a value of 3.6x10 5 Acm -2 (at 4.2K and 30kOe). Various possibilities to improve Jsub(c) of this alloy to still higher values are discussed. The as-cast alloy is ductile, easy to draw, and economical from a technical point of view, and the annealed wires and strips are flexible enough for winding. (author)

  6. Secondary ordering in ternary alloy CuMnPt6

    International Nuclear Information System (INIS)

    Takahashi, Miwako; Das, Ananda Kumar; Nakamura, Reo; Ohshima, Ken-ichi; Iwasaki, Hiroshi; Shishido, Toetsu

    2006-01-01

    Using the pulsed-neutron diffraction technique, we performed in situ measurements of structural ordering in the ternary alloy CuMnPt 6 . The diffraction patterns at various temperatures give a direct observation of a double-step ordering: disorder to Cu 3 Au type order as an ordering within the fundamental face-centered cubic lattice to subdivide the lattice into two sublattices formed by face-centered sites (first sublattice) and corner sites (second sublattice) at 968degC; and Cu 3 Au type order to ABC 6 type order as an ordering within the second to subdivide the lattice further into two sublattices formed by alternating (111) planes at 746degC. The order parameters for the ABC 6 type structure experimentally estimated by the method of static concentration waves indicate that the primary ordering developed almost completely, but the secondary ordering remained incomplete. (author)

  7. Bond charges and electronic charge transfer in ternary semiconductors

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    By means of a simple molecule-theoretic model of 'linear superposition of two-electron molecules' the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. (author)

  8. Hardware emulation of Memristor based Ternary Content Addressable Memory

    KAUST Repository

    Bahloul, Mohamed A.; Naous, Rawan; Masmoudi, M.

    2017-01-01

    MTCAM (Memristor Ternary Content Addressable Memory) is a special purpose storage medium in which data could be retrieved based on the stored content. Using Memristors as the main storage element provides the potential of achieving higher density and more efficient solutions than conventional methods. A key missing item in the validation of such approaches is the wide spread availability of hardware emulation platforms that can provide reliable and repeatable performance statistics. In this paper, we present a hardware MTCAM emulation based on 2-Transistors-2Memristors (2T2M) bit-cell. It builds on a bipolar memristor model with storing and fetching capabilities based on the actual current-voltage behaviour. The proposed design offers a flexible verification environment with quick design revisions, high execution speeds and powerful debugging techniques. The proposed design is modeled using VHDL and prototyped on Xilinx Virtex® FPGA.

  9. A high-throughput search for new ternary superalloys

    Science.gov (United States)

    Nyshadham, Chandramouli; Hansen, Jacob; Oses, Corey; Curtarolo, Stefano; Hart, Gus

    In 2006 an unexpected new superalloy, Co3[Al,W], was discovered. This new alloy is cobalt-based, in contrast to conventional superalloys, which are nickel-based. Inspired by this new discovery, we performed first-principles calculations, searching through 2224 ternary metallic systems of the form A3[B0.5C0.5], where A = Ni/Co/Fe and [B, C] = all binary combinations of 40 different elements chosen from the periodic table. We found 175 new systems that are better than the Co3[Al, W] superalloy. 75 of these systems are brand new--they have never been reported in experimental literature. These 75 new potential superalloys are good candidates for further experiments. Our calculations are consistent with current experimental literature where data exists. Work supported under: ONR (MURI N00014-13-1-0635).

  10. Enhancement of phononic band gaps in ternary/binary structure

    International Nuclear Information System (INIS)

    Aly, Arafa H.; Mehaney, Ahmed

    2012-01-01

    Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.

  11. New method for the simultaneous condensation of complete ternary alloy systems under ultrahigh vacuum conditions

    International Nuclear Information System (INIS)

    Mehrtens, A.; Moske, M.; Samwer, K.

    1988-01-01

    An ultrahigh vacuum apparatus is described for the simultaneous condensation of complete ternary alloy systems. Three singly controlled electron beam evaporation sources provide a constant evaporation rate of the different elements. A specially designed rotating mask guarantees a concentration gradient on the substrate according to a ternary phase diagram. The conversion of the actual concentration profile into a standard ternary phase diagram is done by simple computer calculations. They involve corrections for the beam characteristics of the evaporation sources and for the rotating mask. As an example, measurements for the Zr--Cu--Co system are given. The concentration range for the amorphous phase is compared with thermodynamic predictions using Miedema's parameter

  12. Ternary particles with extreme N/Z ratios from neutron-induced fission

    International Nuclear Information System (INIS)

    Koster, U.; Faust, H.; Friedrichs, T.; Oberstedt, S.; Fioni, G.; Grob, M.; Ahmad, I. J.; Devlin, M.; Heinz, A.; Kondev, F. G.; Lauritsen, T.; Sarantites, D. G.; Siem, S.; Sobotka, L. G.; Sonzogni, A.

    2000-01-01

    The existing ternary fission models can well reproduce the yields of the most abundant light charged particles. However, these models tend to significantly overestimate the yields of ternary particles with an extreme N/Z ratio: 3 He, 11 Li, 14 Be, etc. The experimental yields of these isotopes were investigated with the recoil separator LOHENGRIN down to a level of 10 -10 per fission. Results from the fissioning systems 233 U (n th , f), 235 U(n th ,f), 239 Pu(n th ,f) 241 Pu(n th ,f) and 245 Cm(n th ,f) are presented and the implications for the ternary fission models are discussed

  13. Ternary cobalt-molybdenum-zirconium coatings for alternative energies

    Science.gov (United States)

    Yar-Mukhamedova, Gulmira; Ved', Maryna; Sakhnenko, Nikolay; Koziar, Maryna

    2017-11-01

    Consistent patterns for electrodeposition of Co-Mo-Zr coatings from polyligand citrate-pyrophosphate bath were investigated. The effect of both current density amplitude and pulse on/off time on the quality, composition and surface morphology of the galvanic alloys were determined. It was established the coating Co-Mo-Zr enrichment by molybdenum with current density increasing up to 8 A dm-2 as well as the rising of pulse time and pause duration promotes the content of molybdenum because of subsequent chemical reduction of its intermediate oxides by hydrogen ad-atoms. It was found that the content of the alloying metals in the coating Co-Mo-Zr depends on the current density and on/off times extremely and maximum Mo and Zr content corresponds to the current density interval 4-6 A dm-2, on-/off-time 2-10 ms. Chemical resistance of binary and ternary coatings based on cobalt is caused by the increased tendency to passivity and high resistance to pitting corrosion in the presence of molybdenum and zirconium, as well as the acid nature of their oxides. Binary coating with molybdenum content not less than 20 at.% and ternary ones with zirconium content in terms of corrosion deep index are in a group ;very proof;. It was shown that Co-Mo-Zr alloys exhibits the greatest level of catalytic properties as cathode material for hydrogen electrolytic production from acidic media which is not inferior a platinum electrode. The deposits Co-Mo-Zr with zirconium content 2-4 at.% demonstrate high catalytic properties in the carbon(II) oxide conversion. This confirms the efficiency of materials as catalysts for the gaseous wastes purification and gives the reason to recommend them as catalysts for red-ox processes activating by oxygen as well as electrode materials for red-ox batteries.

  14. Crystal chemistry and magnetic properties of ternary rare earth sulfides

    International Nuclear Information System (INIS)

    Plug, C.M.; Rijksuniversiteit Leiden

    1977-01-01

    The results of magnetic measurements on two groups of ternary rare earth sulphides are described, the MLnS 2 (M=Li, Na, K) type of compounds and the series Ln 2 ZrS 5 , where Ln denotes one of the rare earths. None of these compounds is metallic, excluding the possibility of RKKY-interaction. In chapter II a survey of the relevant theory on magnetic properties and crystal field splitting is given. In spite of the similarity in chemical properties of the rare earths, the crystal chemistry of their compounds is rather complex. This is due to the lanthanide contraction. The third chapter deals with the description and classification of the numerous crystal structures of both ternary and binary rare earth sulphides that have been observed. Rather simple relations between various structures are presented using a new method of structure classification. The magnetic interactions expected to be based on superexchange via the anions, which is usually very structure dependent. Experiments to study the crystallographic ordering, applying both X-ray and electron diffraction methods and the results of the magnetic measurements on the compounds MLnS 2 are reported in chapter IV. The compounds Ln 2 ZrS 5 are candidates for a systematic study of the variation of the magnetic properties along the rare earth series. The results of magnetic measurements on these compounds are presented in chapter V, combined with the results of specific heat measurements. Also the magnetic structure of two representatives, Tb 2 ZrS 5 and Dy 2 ZrS 5 , determined by neutron diffraction experiments below the ordering temperature, is reported

  15. Boron-Based Hydrogen Storage: Ternary Borides and Beyond

    Energy Technology Data Exchange (ETDEWEB)

    Vajo, John J. [HRL Laboratories, LLC, Malibu, CA (United States)

    2016-04-28

    DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slow rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.

  16. Solar Special

    International Nuclear Information System (INIS)

    Van Roekel, A.; Osborne, J.; Schroeter, S.; De Jong, R.; De Saint Jacob, Y.

    2009-01-01

    Solar power is growing much faster than most policymakers and analysts realise. As costs come down and feed-in tariffs go up across Europe, a number of countries have started in pursuit of market leader Germany. But in Germany criticism is growing of the multi-billion-euro support schemes that keep the solar industry booming. In this section of the magazine several articles are dedicated to developments in solar energy in Europe. The first article is an overview story on the strong growing global market for solar cells, mainly thanks to subsidy schemes. The second article is on the position of foreign companies in the solar market in Italy. Article number three is dedicated to the conditions for solar technology companies to establish themselves in the German state of Saxony. Also the fifth article deals with the development of solar cells in Saxony: scientists, plant manufacturers and module producers in Saxony are working on new technologies that can be used to produce solar electricity cost-effectively. The goal is to bring the price down to match that of conventionally generated electricity within the next few years. The sixth article deals with the the solar power market in Belgium, which may be overheated or 'oversubsidized'. Article seven is on France, which used to be a pioneer in solar technology, but now produces only a fraction of the solar output of market leader Germany. However, new attractive feed-in-tariffs are changing the solar landscape drastically

  17. Enhancement of the photoelectric performance in inverted bulk heterojunction solid solar cell with inorganic nanocrystals

    International Nuclear Information System (INIS)

    Luan, Weiling; Zhang, Chengxi; Luo, Lingli; Yuan, Binxia; Jin, Lin; Kim, Yong-Sang

    2017-01-01

    Highlights: • Solid solar cells based on FeS_2 or PbS NCs showed power conversion efficiency (PCE) of 3.0% and 3.11%, respectively. • The FeS_2 NCs/polymer solar cells showed good time and thermal stability when exposed in air condition. • Ternary solid solar cells based on PbS NCs exhibited a higher short circuit current density (J_s_c). - Abstract: Nanocrystal/polymer solid solar cells have the advantages of low-cost, simple process, and flexible manufacture. In this work, ternary solid solar cells based on FeS_2 and PbS nanocrystals exhibited photovoltaic conversion efficiency of 3.0% and 3.1%, respectively. As a kind of semiconductor with optical absorption in the visible and near-infrared regions, FeS_2 nanocrystals matched well with the solar radiation spectrum. Furthermore, PbS Nanocrystals could increase the number of electrons, due to its multiple exciton effect. Additionally, the FeS_2 nanocrystals solar cells showed high stability, with 83.3% of its initial efficiency remained after 15 weeks of exposure in air, and kept good stable performance at 20–80 °C. The photovoltaic conversion efficiency fluctuation magnitudes were also found to be smaller than quantum-dot sensitized solar cell under the same conditions.

  18. Solar Indices - Solar Radio Flux

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Collection includes a variety of indices related to solar activity contributed by a number of national and private solar observatories located worldwide. This...

  19. GaAsP on GaP top solar cells

    Science.gov (United States)

    Mcneely, J. B.; Negley, G. H.; Barnett, A. M.

    1985-01-01

    GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

  20. Coupled solar still, solar heater

    Energy Technology Data Exchange (ETDEWEB)

    Davison, R R; Harris, W B; Moor, D H; Delyannis, A; Delyannis, E [eds.

    1976-01-01

    Computer simulation of combinations of solar stills and solar heaters indicates the probable economic advantage of such an arrangement in many locations if the size of the heater is optimized relative to that of the still. Experience with various low cost solar heaters is discussed.

  1. Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

    Science.gov (United States)

    Kang, Dongseok; Young, James L.; Lim, Haneol; Klein, Walter E.; Chen, Huandong; Xi, Yuzhou; Gai, Boju; Deutsch, Todd G.; Yoon, Jongseung

    2017-03-01

    Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfaces for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.

  2. Solar Sailing

    Science.gov (United States)

    Johnson, Les

    2009-01-01

    Solar sailing is a topic of growing technical and popular interest. Solar sail propulsion will make space exploration more affordable and offer access to destinations within (and beyond) the solar system that are currently beyond our technical reach. The lecture will describe solar sails, how they work, and what they will be used for in the exploration of space. It will include a discussion of current plans for solar sails and how advanced technology, such as nanotechnology, might enhance their performance. Much has been accomplished recently to make solar sail technology very close to becoming an engineering reality and it will soon be used by the world s space agencies in the exploration of the solar system and beyond. The first part of the lecture will summarize state-of-the-art space propulsion systems and technologies. Though these other technologies are the key to any deep space exploration by humans, robots, or both, solar-sail propulsion will make space exploration more affordable and offer access to distant and difficult destinations. The second part of the lecture will describe the fundamentals of space solar sail propulsion and will describe the near-, mid- and far-term missions that might use solar sails as a propulsion system. The third part of the lecture will describe solar sail technology and the construction of current and future sailcraft, including the work of both government and private space organizations.

  3. Synthesis and properties of ternary mixture of nickel/cobalt/tin oxides for supercapacitors

    Science.gov (United States)

    Ferreira, C. S.; Passos, R. R.; Pocrifka, L. A.

    2014-12-01

    The present study reports the synthesis and morphological, structural and electrochemical characterization of ternary oxides mixture containing nickel, cobalt and tin. The ternary oxide is synthesized by Pechini method with subsequent deposition onto a titanium substrate in a thin-film form. XRD and EDS analysis confirm the formation of ternary film with amorphous nature. SEM analysis show that cracks on the film favor the gain of the surface area that is an interesting feature for electrochemical capacitors. The ternary film is investigated in KOH electrolyte solution using cyclic voltammetry and charge-discharge study with a specific capacitance of 328 F g-1, and a capacitance retention of 86% over 600 cycles. The values of specific power and specific energy was 345.7 W kg-1 and 18.92 Wh kg-1, respectively.

  4. Experimental investigation of phase equilibria in the Zr-Cu-Ni ternary system

    International Nuclear Information System (INIS)

    Yang, Mujin; Wang, Cuiping; Yang, Shuiyuan; Shi, Zhan; Han, Jiajia; Liu, Xingjun

    2017-01-01

    The phase equilibria in the Zr-Cu-Ni ternary system are investigated combined with X-ray diffraction, electron probe micro-analysis and differential scanning calorimetry. Two isothermal sections of the Zr-Cu-Ni ternary system at 1 000 C and 1 100 C are experimentally established. Most of the binary intermetallic compounds, e.g. Zr 7 Ni 10 , ZrNi, ZrNi 5 , Zr 14 Cu 51 , and Zr 2 Cu 9 , show a remarkable ternary solubility. A new ternary compound named τ 3 (Zr 31.1-30.7 . Cu 28.5-40.3 Ni 40.4-29.0 ) is detected at 1 000 C and dissolved at 1 020 C because the nearby large liquid phase field further expands. The newly determined phase equilibria will provide important information for both thermodynamic assessment and alloy design of Zr-based metallic glass.

  5. The ternary systems Sc-Sm(Dy)-Si at 870 K

    International Nuclear Information System (INIS)

    Kotur, B.Ya.; Mokra, I.Ya.; Toporinskij, A.Ya.

    1991-01-01

    Isothermal cross sections of the ternary systems Sc-Sm-Si and Sc-Dy-Si at 870 K have been plotted. Investigation of scandium and disprosium in ternary systems have been examined by X-ray diffraction and microstructure analysis. Besides literary data on binary systems Sc-Si, Sm-Si, Dy-Si have been used. Formation of limited (Sc-Sm-Si, Sc-Dy-Si) and continuous (Sc-Dy-Si) solid solutions based on bisilicides of Sc and Sm(Dy) is discovered. Two and five ternary compounds in Sc-Sm-Si and Sc-Dy-Si systems have been determined and their crystal structure has been established. When investigating of Sc-(rare earth element)-Si ternary systems and should take into account the specific interaction of scandium and samarium with REE

  6. A computer calculation of the ternary Mo-Pd-Rh phase diagram

    International Nuclear Information System (INIS)

    Guerler, R.; Pratt, J.N.

    1993-01-01

    Thermodynamic coefficients for the phases in the binary Mo-Pd, Pd-Rh and Mo-Rh systems were derived by the assessment of the available experimental data using the binary Lukas optimization program. The resulting coefficients were first successfully utilised in reestablishing the binaries. The coefficients thus obtained in the binary computation were combined with ternary descriptions to compute ternary isothermal sections. Although no ternary interaction term was involved in the construction of the isotherms, the section calculated at 1373 K is found to be consistent with the experimentally established isothermal section at the same temperature. The location of three-phase field (bcc+hcp+fcc) and phase boundaries in both isotherms are matching reasonably well. Combining only binary coefficients of these phases, it is possible to construct reasonable isothermal sections at different temperatures. Following this conclusion, isothermal sections ranging from 1373 to 2673 K of the ternary Mo-Pd-Rh system were calculated. (orig.)

  7. Theoretical study of physical properties and oxygen incorporation effect in nanolaminated ternary carbides 211-MAX phases

    KAUST Repository

    Kanoun, Mohammed; Goumri-Said, Souraya

    2012-01-01

    In this chapter, we employ ab initio approaches to review some important physical properties of nanolaminated ternary carbides MAX phases. We fi rstly use an all electron full-potential linearized augmented plane-wave method within the generalized

  8. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.; Jiang, Chao; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a

  9. An evaporation-based model of thermal neutron induced ternary fission of plutonium

    International Nuclear Information System (INIS)

    Lestone, J.P.

    2008-01-01

    Ternary fission probabilities for thermal neutron induced fission of plutonium are analyzed within the framework of an evaporation-based model where the complexity of time-varying potentials, associated with the neck collapse, are included in a simplistic fashion. If the nuclear temperature at scission and the fission-neck-collapse time are assumed to be ~ 1.2 MeV and ~ 10 -22 s, respectively, then calculated relative probabilities of ternary-fission light-charged-particle emission follow the trends seen in the experimental data. The ability of this model to reproduce ternary fission probabilities spanning seven orders of magnitude for a wide range of light-particle charges and masses implies that ternary fission is caused by the coupling of an evaporation-like process with the rapid re-arrangement of the nuclear fluid following scission. (author)

  10. Partially fluorinated aarylene polyethers and their ternary blends with PBI and H3PO4

    DEFF Research Database (Denmark)

    Li, Qingfeng; Jensen, Jens Oluf; Pan, Chao

    2008-01-01

    Ternary blend membranes based on sulphonated partially fluorinated arylene polyether, polybenzimidazole (PBI) and phosphoric acid were prepared and characterised as electrolyte for high temperature proton exchange membrane fuel cells. Partially fluorinated arylene polyether was first prepared from...

  11. Synthesis and Characterization of Novel Ternary and Quaternary Alkali Metal Thiophosphates

    KAUST Repository

    Alahmary, Fatimah S.

    2014-01-01

    The ongoing development of nonlinear optical (NLO) crystals such as coherent mid-IR sources focuses on various classes of materials such as ternary and quaternary metal chalcophosphates. In case of thiophosphates, the connection between PS4

  12. On the application of the NRTL method to ternary (liquid + liquid) equilibria

    International Nuclear Information System (INIS)

    Alvarez Julia, Jorge; Barrero, Carmen R.; Corso, Maria E.; Grande, Maria del Carmen; Marschoff, Carlos M.

    2005-01-01

    The use of the NRTL method for correlating experimental data in ternary (liquid + liquid) equilibria is considered. It is concluded that parameters obtained by direct correlation techniques have not a direct physical meaning. Also, it is shown that the resulting values for these parameters depend on the number of experimental points considered and on the particular calculation method employed. Thus, it is very risky to employ such parameters in predicting equilibria of other ternary mixtures

  13. Structure of the novel ternary hydrides Li4Tt2D (Tt=Si and Ge)

    International Nuclear Information System (INIS)

    Wu Hui; Rush, J.J.; Maryland Univ., College Park, MD; Hartman, M.R.; Oregon State Univ., Corvallis, OR; Udovic, T.J.; Zhou Wei; Pennsylvania Univ., Philadelphia, PA; Bowman, R.C. Jr.; Vajo, J.J.

    2007-01-01

    The crystal structures of newly discovered Li 4 Ge 2 D and Li 4 Si 2 D ternary phases were solved by direct methods using neutron powder diffraction data. Both structures can be described using a Cmmm orthorhombic cell with all hydrogen atoms occupying Li 6 -octahedral interstices. The overall crystal structure and the geometry of these interstices are compared with those of other related phases, and the stabilization of this novel class of ternary hydrides is discussed. (orig.)

  14. Consideration of the Verleur model of far-infrared spectroscopy of ternary compounds

    International Nuclear Information System (INIS)

    Robouch, B. V.; Kisiel, A.; Sheregii, E. M.

    2001-01-01

    The clustering model proposed by Verleur and Barker [Phys. Rev. 149, 715 (1966)] to interpret far infrared data for face-centered-cubic ternary compounds is critically analyzed. It is shown that their approach, satisfactory for fitting some ternary compound spectral curves, is too restricted by its one-parameter β model to be able to describe preferences (with respect to a random distribution case) for the five tetrahedron configurations

  15. Affine planes, ternary rings, and examples of non-Desarguesian planes

    OpenAIRE

    Ivanov, Nikolai V.

    2016-01-01

    The paper is devoted to a detailed self-contained exposition of a part of the theory of affine planes leading to a construction of affine (or, equivalently, projective) planes not satisfying the Desarques axiom. It is intended to complement the introductory expositions of the theory of affine and projective planes. A novelty of our exposition is a new notation for the ternary operation in a ternary ring, much more suggestive than the standard one.

  16. A new model for predicting thermodynamic properties of ternary metallic solution from binary components

    International Nuclear Information System (INIS)

    Fang Zheng; Zhang Quanru

    2006-01-01

    A model has been derived to predict thermodynamic properties of ternary metallic systems from those of its three binaries. In the model, the excess Gibbs free energies and the interaction parameter ω 123 for three components of a ternary are expressed as a simple sum of those of the three sub-binaries, and the mole fractions of the components of the ternary are identical with the sub-binaries. This model is greatly simplified compared with the current symmetrical and asymmetrical models. It is able to overcome some shortcomings of the current models, such as the arrangement of the components in the Gibbs triangle, the conversion of mole fractions between ternary and corresponding binaries, and some necessary processes for optimizing the various parameters of these models. Two ternary systems, Mg-Cu-Ni and Cd-Bi-Pb are recalculated to demonstrate the validity and precision of the present model. The calculated results on the Mg-Cu-Ni system are better than those in the literature. New parameters in the Margules equations expressing the excess Gibbs free energies of three binary systems of the Cd-Bi-Pb ternary system are also given

  17. Experimental determination of the phase equilibria in the Co-Fe-Zr ternary system

    International Nuclear Information System (INIS)

    Wang, C.P.; Yu, Y.; Zhang, H.H.; Hu, H.F.; Liu, X.J.

    2011-01-01

    Research highlights: → We determined four isothermal sections of the Co-Fe-Zr system from 1000 o C to 1300 o C. → No ternary compound was found in the Co-Fe-Zr ternary system. → The solubility of Fe in the liquid phase at 1300 o C is extremely large. → The (Co, Fe) 2 Zr phase form the continuous solution from Co-Zr side to Fe-Zr side. → The solubility of Zr in the fcc (Co, Fe) phase is extremely small. - Abstract: The phase equilibria in the Co-Fe-Zr ternary system were investigated by means of optical microscopy (OM), electron probe microanalysis (EPMA), X-ray diffraction (XRD), and differential scanning calorimetry (DSC) on equilibrated ternary alloys. Four isothermal sections of the Co-Fe-Zr ternary system at 1300 o C, 1200 o C, 1100 o C and 1000 o C were experimentally established. The experimental results indicate that (1) no ternary compound was found in this system; (2) the solubility of Fe in the liquid phase of the Co-rich corner at 1300 o C is extremely large; (3) the liquid phase in the Zr-rich corner and the (Co,Fe) 2 Zr phase form the continuous solid solutions from the Co-Zr side to the Fe-Zr side; (4) the solubility of Zr in the fcc (Co, Fe) phase is extremely small.

  18. Temperature dependence of binary and ternary recombination of H3+ ions with electrons

    International Nuclear Information System (INIS)

    Glosik, J.; Plasil, R.; Korolov, I.; Kotrik, T.; Novotny, O.; Hlavenka, P.; Dohnal, P.; Varju, J.; Kokoouline, V.; Greene, Chris H.

    2009-01-01

    We study binary and the recently discovered process of ternary He-assisted recombination of H 3 + ions with electrons in a low-temperature afterglow plasma. The experiments are carried out over a broad range of pressures and temperatures of an afterglow plasma in a helium buffer gas. Binary and He-assisted ternary recombination are observed and the corresponding recombination rate coefficients are extracted for temperatures from 77 to 330 K. We describe the observed ternary recombination as a two-step mechanism: first, a rotationally excited long-lived neutral molecule H 3 * is formed in electron-H 3 + collisions. Second, the H 3 * molecule collides with a helium atom that leads to the formation of a very long-lived Rydberg state with high orbital momentum. We present calculations of the lifetimes of H 3 * and of the ternary recombination rate coefficients for para- and ortho-H 3 + . The calculations show a large difference between the ternary recombination rate coefficients of ortho- and para-H 3 + at temperatures below 300 K. The measured binary and ternary rate coefficients are in reasonable agreement with the calculated values.

  19. Temperature dependence of binary and ternary recombination of H3+ ions with electrons

    Science.gov (United States)

    Glosík, J.; Plašil, R.; Korolov, I.; Kotrík, T.; Novotný, O.; Hlavenka, P.; Dohnal, P.; Varju, J.; Kokoouline, V.; Greene, Chris H.

    2009-05-01

    We study binary and the recently discovered process of ternary He-assisted recombination of H3+ ions with electrons in a low-temperature afterglow plasma. The experiments are carried out over a broad range of pressures and temperatures of an afterglow plasma in a helium buffer gas. Binary and He-assisted ternary recombination are observed and the corresponding recombination rate coefficients are extracted for temperatures from 77 to 330 K. We describe the observed ternary recombination as a two-step mechanism: first, a rotationally excited long-lived neutral molecule H3∗ is formed in electron- H3+ collisions. Second, the H3∗ molecule collides with a helium atom that leads to the formation of a very long-lived Rydberg state with high orbital momentum. We present calculations of the lifetimes of H3∗ and of the ternary recombination rate coefficients for para- and ortho- H3+ . The calculations show a large difference between the ternary recombination rate coefficients of ortho- and para- H3+ at temperatures below 300 K. The measured binary and ternary rate coefficients are in reasonable agreement with the calculated values.

  20. Mechanical and water barrier properties of agar/κ-carrageenan/konjac glucomannan ternary blend biohydrogel films.

    Science.gov (United States)

    Rhim, Jong-Whan; Wang, Long-Feng

    2013-07-01

    Multicomponent hydrogel films composed of agar, κ-carrageenan, konjac glucomannan powder, and nanoclay (Cloisite(®) 30B) were prepared and their mechanical and water barrier properties such as water vapor permeability (WVP), water contact angle (CA), water solubility (WS), water uptake ratio (WUR), water vapor uptake ratio (WVUR) were determined. Mechanical, water vapor barrier, and water resistance properties of the ternary blend film exhibited middle range of individual component films, however, they increased significantly after formation of nanocomposite with the clay. Especially, the water holding capacity of the ternary blend biopolymer films increased tremendously, from 800% to 1681% of WUR for agar and κ-carrageenan films up to 5118% and 5488% of WUR for the ternary blend and ternary blend nanocomposite films, respectively. Water vapor adsorption behavior of films was also tested by water vapor adsorption kinetics and water vapor adsorption isotherms test. Preliminary test result for fresh spinach packaging revealed that the ternary blend biohydrogel films had a high potential for the use as an antifogging film for packaging highly respiring agricultural produce. In addition, the ternary blend nanocomposite film showed an antimicrobial activity against Gram-positive bacteria, Listeria monocytogenes. Copyright © 2013 Elsevier Ltd. All rights reserved.

  1. Equilibrium studies of ternary systems containing some selected transition metal ions, triazoles and aromatic carboxylic acids

    Energy Technology Data Exchange (ETDEWEB)

    Khalil, Mohamed Magdy; Radalla, Abd-Elatty; Qasem, Fatma; Khaled, Rehab [Beni-Suef University, Beni-Suef (Egypt)

    2014-01-15

    Solution equilibria of the binary and ternary complex systems of the divalent transition metal ions Cu{sup 2+}, Ni{sup 2+}, Zn{sup 2+}, and Co{sup 2+} with 1,2,4-triazole (TRZ), 3-mercapto-1,2,4-triazole (TRZSH), and 3-amino-1,2,4-triazole (TRZAM) and aromatic carboxylic acids (phthalic, anthranilic, salicylic, and 5-sulfosalicylic acid) have been studied pH-metrically at (25.0±0.1) .deg. C, and a constant ionic strength I=1x10{sup -1} mol L{sup -1} NaNO{sub 3} in an aqueous medium. The potentiometric titration curves show that binary and ternary complexes of these ligands are formed in solution. The stability constants of the different binary and ternary complexes formed were calculated on the basis of computer analysis of the titration data. The relative stability of the different ternary complex species is expressed in terms of Δ log K values, log X and R. S.% parameters. The effect of temperature of the medium on both the proton-ligand equilibria for TRZAM and phthalic acid and their metal-ligand equilibria with Cu{sup 2+}, Ni{sup 2+}, and Co{sup 2+} has been studied along with the corresponding thermodynamic parameters. The complexation behavior of ternary complexes is ascertained using conductivity measurements. In addition, the formation of ternary complexes in solution has been confirmed by using UV-visible spectrophotometry.

  2. Ternary complex formation of lanthanides and radiolanthanides with phosphate and serum proteins

    International Nuclear Information System (INIS)

    Neumaier, B.; Roesch, F.

    1999-01-01

    Radioyttrium was recently reported to form ternary complexes with phosphate and serum proteins in blood. In the present work it was investigated whether the trivalent radiolanthanides react in a chemically similar way. In systematic binding studies using gel filtration a ternary complex formation between different lanthanides, phosphate and serum proteins could be identified. The tendency to build a ternary compound of the type Ln III - phosphate - serum protein, however, is dependent on the ionic radii of the lanthanides. Whereas the light and transition lanthanides have a strong inclination to build a ternary complex, this tendency is weaker for the heavier ones. Taking into account the high content of phosphate in human blood, the corresponding ternary complexes of radiolanthanides represent an important transport form of these elements in blood. This finding may contribute to an understanding of the nuclear medical observation on the biodistribution of radiolanthanides. The heavy radiolanthanides can be classified as bone seeking metals, whereas the light and transition lanthanide elements accumulate mainly in the liver and the spleen. For the lighter radiolanthanides the corresponding ternary complexes thus represent an important transport form in blood. This physicochemical form of lanthanides mainly results in reticulo endothelial accumulation; on the other hand, the lower tendency of heavier lanthanides leads to preferential skeletal deposition. (orig.)

  3. Phase equilibria in M-X-X' and M-Al-X ternary systems (M-transition metal, X,X'-B,C,N,Si) and crystal chemistry of ternary compounds

    International Nuclear Information System (INIS)

    Gusev, A.I.

    1996-01-01

    The data on phase equilibria in the M-X-X' and M-Al-X ternary systems (M-transition metal of 3 to 8 groups, X-B,C, N, Si) have been considered and summarized. modern oxygen-free advanced ceramics is based on these ternary systems. Phase diagrams of the 130 ternary systems have been discussed, more than two hundred ternary phases forming in these systems have been systematized and described. The typical crystal structures of ternary compounds and phase have been considered, the common and distinctive features of these structures have been analysed. It has been shown that the ternary compounds with octahedral atomic groups XM 6 have a regions of homogeneity. Refs. 240

  4. Balancing Accuracy and Computational Efficiency for Ternary Gas Hydrate Systems

    Science.gov (United States)

    White, M. D.

    2011-12-01

    Geologic accumulations of natural gas hydrates hold vast organic carbon reserves, which have the potential of meeting global energy needs for decades. Estimates of vast amounts of global natural gas hydrate deposits make them an attractive unconventional energy resource. As with other unconventional energy resources, the challenge is to economically produce the natural gas fuel. The gas hydrate challenge is principally technical. Meeting that challenge will require innovation, but more importantly, scientific research to understand the resource and its characteristics in porous media. Producing natural gas from gas hydrate deposits requires releasing CH4 from solid gas hydrate. The conventional way to release CH4 is to dissociate the hydrate by changing the pressure and temperature conditions to those where the hydrate is unstable. The guest-molecule exchange technology releases CH4 by replacing it with a more thermodynamically stable molecule (e.g., CO2, N2). This technology has three advantageous: 1) it sequesters greenhouse gas, 2) it releases energy via an exothermic reaction, and 3) it retains the hydraulic and mechanical stability of the hydrate reservoir. Numerical simulation of the production of gas hydrates from geologic deposits requires accounting for coupled processes: multifluid flow, mobile and immobile phase appearances and disappearances, heat transfer, and multicomponent thermodynamics. The ternary gas hydrate system comprises five components (i.e., H2O, CH4, CO2, N2, and salt) and the potential for six phases (i.e., aqueous, liquid CO2, gas, hydrate, ice, and precipitated salt). The equation of state for ternary hydrate systems has three requirements: 1) phase occurrence, 2) phase composition, and 3) phase properties. Numerical simulation of the production of geologic accumulations of gas hydrates have historically suffered from relatively slow execution times, compared with other multifluid, porous media systems, due to strong nonlinearities and

  5. Solar Photovoltaic

    OpenAIRE

    Wang, Chen; Lu, Yuefeng

    2016-01-01

    In the 21st century, human demand for new energy sources is urgent, because the traditional fossil energy is unable to meet human needs, and the fossil resource will make pollution, in this situation, solar energy gradually into the vision of scientists. As science advances, humans can already extensive use of solar energy to generate electricity. Solar energy is an inexhaustible and clean energy. In the global energy crisis, environmental pollution is the growing problem of today. The us...

  6. Solar magnetohydrodynamics

    International Nuclear Information System (INIS)

    Priest, E.R.

    1982-01-01

    The book serves several purposes. First set of chapters gives a concise general introduction to solar physics. In a second set the basic methods of magnetohydrodynamics are developed. A third set of chapters is an account of current theories for observed phenomena. The book is suitable for a course in solar physics and it also provides a comprehensive review of present magnetohydrodynamical models in solar physics. (SC)

  7. Solar constraints

    International Nuclear Information System (INIS)

    Provost, J.

    1984-01-01

    Accurate tests of the theory of stellar structure and evolution are available from the Sun's observations. The solar constraints are reviewed, with a special attention to the recent progress in observing global solar oscillations. Each constraint is sensitive to a given region of the Sun. The present solar models (standard, low Z, mixed) are discussed with respect to neutrino flux, low and high degree five-minute oscillations and low degree internal gravity modes. It appears that actually there do not exist solar models able to fully account for all the observed quantities. (Auth.)

  8. Solar Simulator

    Science.gov (United States)

    1981-01-01

    Oriel Corporation's simulators have a high pressure xenon lamp whose reflected light is processed by an optical system to produce a uniform solar beam. Because of many different types of applications, the simulators must be adjustable to replicate many different areas of the solar radiation spectrum. Simulators are laboratory tools for such purposes as testing and calibrating solar cells, or other solar energy systems, testing dyes, paints and pigments, pharmaceuticals and cosmetic preparations, plant and animal studies, food and agriculture studies and oceanographic research.

  9. Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

    Science.gov (United States)

    Zhang, Chaomin

    It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation

  10. TEXTURE-AWARE DENSE IMAGE MATCHING USING TERNARY CENSUS TRANSFORM

    Directory of Open Access Journals (Sweden)

    H. Hu

    2016-06-01

    Full Text Available Textureless and geometric discontinuities are major problems in state-of-the-art dense image matching methods, as they can cause visually significant noise and the loss of sharp features. Binary census transform is one of the best matching cost methods but in textureless areas, where the intensity values are similar, it suffers from small random noises. Global optimization for disparity computation is inherently sensitive to parameter tuning in complex urban scenes, and must compromise between smoothness and discontinuities. The aim of this study is to provide a method to overcome these issues in dense image matching, by extending the industry proven Semi-Global Matching through 1 developing a ternary census transform, which takes three outputs in a single order comparison and encodes the results in two bits rather than one, and also 2 by using texture-information to self-tune the parameters, which both preserves sharp edges and enforces smoothness when necessary. Experimental results using various datasets from different platforms have shown that the visual qualities of the triangulated point clouds in urban areas can be largely improved by these proposed methods.

  11. The role of In in III-nitride ternary semiconductors

    CERN Multimedia

    Redondo cubero, A

    This proposal aims to study the role of In in the outstanding efficiency of luminescent devices based on group III-nitride ternary semiconductors. To study the microscopic environments of In in GaInN and AlInN, Perturbed Angular Correlation (PAC) experiments will be performed using the PAC-probes $^{111m}$Cd($^{111}$Cd), $^{115}$Cd($^{115}$In) and $^{117}$Cd($^{117}$In). Temperature dependent PAC measurements using the $^{111}$In($^{111}$Cd) probe indicated that In in GaN and AlN forms a complex with a defect, possibly a nitrogen vacancy (V$_{N}$), which is stable up to high temperatures and might be involved in the luminescence mechanisms. Analysing these results two questions arose: \\\\ \\\\1. Does the fact that the actual measurement is performed with the daughter nucleus $^{111}$Cd (being an acceptor) influence the probe-defect interaction? This question can be answered by performing measurements with the complementary probe $^{117}$Cd($^{117}$In). \\\\ \\\\ 2. What is the significance of $\\textit{a...

  12. Ternary choices in repeated games and border collision bifurcations

    International Nuclear Information System (INIS)

    Dal Forno, Arianna; Gardini, Laura; Merlone, Ugo

    2012-01-01

    Highlights: ► We extend a model of binary choices with externalities to include more alternatives. ► Introducing one more option affects the complexity of the dynamics. ► We find bifurcation structures which where impossible to observe in binary choices. ► A ternary choice cannot simply be considered as a binary choice plus one. - Abstract: Several recent contributions formalize and analyze binary choices games with externalities as those described by Schelling. Nevertheless, in the real world choices are not always binary, and players have often to decide among more than two alternatives. These kinds of interactions are examined in game theory where, starting from the well known rock-paper-scissor game, several other kinds of strategic interactions involving more than two choices are examined. In this paper we investigate how the dynamics evolve introducing one more option in binary choice games with externalities. The dynamics we obtain are always in a stable regime, that is, the structurally stable dynamics are only attracting cycles, but of any possible positive integer as period. We show that, depending on the structure of the game, the dynamics can be quite different from those existing when considering binary choices. The bifurcation structure, due to border collisions, is explained, showing the existence of so-called big-bang bifurcation points.

  13. Symmetric and asymmetric ternary fission of hot nuclei

    International Nuclear Information System (INIS)

    Siwek-Wilczynska, K.; Wilczynski, J.; Leegte, H.K.W.; Siemssen, R.H.; Wilschut, H.W.; Grotowski, K.; Panasiewicz, A.; Sosin, Z.; Wieloch, A.

    1993-01-01

    Emission of α particles accompanying fusion-fission processes in the 40 Ar + 232 Th reaction at E( 40 Ar) = 365 MeV was studied in a wide range of in-fission-plane and out-of-plane angles. The exact determination of the emission angles of both fission fragments combined with the time-of-flight measurements allowed us to reconstruct the complete kinematics of each ternary event. The coincident energy spectra of α particles were analyzed by using predictions of the energy spectra of the statistical code CASCADE . The analysis clearly demonstrates emission from the composite system prior to fission, emission from fully accelerated fragments after fission, and also emission during scission. The analysis is presented for both symmetric and asymmetric fission. The results have been analyzed using a time-dependent statistical decay code and confronted with dynamical calculations based on a classical one-body dissipation model. The observed near-scission emission is consistent with evaporation from a dinuclear system just before scission and evaporation from separated fragments just after scission. The analysis suggests that the time scale of fission of the hot composite systems is long (about 7x10 -20 s) and the motion during the descent to scission almost completely damped

  14. New ternary intermetallics, based magnesium, for hydrogen storage

    International Nuclear Information System (INIS)

    Roquefere, J.G.

    2009-05-01

    The use of fossil fuels (non-renewable energy) is responsible for increasing the concentration of greenhouse gases in the atmosphere. Among the considered alternatives, hydrogen is seen as the most attractive energy vector. The storage in intermetallics makes it possible to obtain mass and volume capacities (e.g. 140 g/L) higher than those obtained by liquid form or under pressure (respectively 71 and 40 g/L). We have synthesised Mg and Rare Earth based compounds (RE = Y, Ce and Gd), derived from the cubic Laves phases AB2. Their physical and chemical properties have been studied (hydrogenation, electrochemistry, magnetism,...). The conditions of sorption (P and T) are particularly favorable (i.e. absorption at room temperature and atmospheric pressure). Besides, to improve the sorption kinetics of metallic magnesium, the compounds developed previously were used as catalysts. Thus, GdMgNi4 was milled with magnesium and the speeds of absorption and desorption of the mixture are found higher than those obtained for the composites Mg+Ni or Mg+V, which are reference systems. A theoretical approach (DFT) was used to model the electronic structure of the ternary compounds (i.e. REMgNi4) and thus to predict or confirm the experimental results. (authors)

  15. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  16. Delay Insensitive Ternary CMOS Logic for Secure Hardware

    Directory of Open Access Journals (Sweden)

    Ravi S. P. Nair

    2015-09-01

    Full Text Available As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100 nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures generate less noise and produce less electro-magnetic interference (EMI. This paper develops the Delay-Insensitive Ternary Logic (DITL asynchronous design paradigm that combines design aspects of similar dual-rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme. DITL is compared with other delay insensitive paradigms, such as Pre-Charge Half-Buffers (PCHB and NULL Convention Logic (NCL on which it is based. An application of DITL is discussed in designing secure digital circuits resistant to side channel attacks based on measurement of timing, power, and EMI signatures. A Secure DITL Adder circuit is designed at the transistor level, and several variance parameters are measured to validate the efficiency of DITL in resisting side channel attacks. The DITL design methodology is then applied to design a secure 8051 ALU.

  17. Intermolecular Interactions in Ternary Glycerol–Sample–H2O

    DEFF Research Database (Denmark)

    Westh, Peter; Rasmussen, Erik Lumby; Koga, Yoshikata

    2011-01-01

    We studied the intermolecular interactions in ternary glycerol (Gly)–sample (S)–H2O systems at 25 °C. By measuring the excess partial molar enthalpy of Gly, HGlyEHEGly, we evaluated the Gly–Gly enthalpic interaction, HGly-GlyEHEGly--Gly, in the presence of various samples (S). For S, tert...... little effect on HGly-GlyEHEGly--Gly. This contrasts with our earlier studies on 1P–S–H2O in that Na+, F− and Cl− are found as hydration centers from the induced changes on HIP-IPEHEIP--IP in the presence of S, while Br−, I−, and SCN− are found to act as hydrophiles. In comparison with the Hofmeister...... ranking of these ions, the kosmotropes are hydration centers and the more kosmotropic the higher the hydration number, consistent with the original Hofmeister’s concept of “H2O withdrawing power.” Br−, I− and SCN−, on the other hand, acted as hydrophiles and the more chaotropic they are the more...

  18. Radiation-induced segregation in binary and ternary alloys

    International Nuclear Information System (INIS)

    Okamoto, P.R.; Rehn, L.E.

    1979-01-01

    A review is given of our current knowledge of radiation-induced segregation of major and minor elements in simple binary and ternary alloys as derived from experimental techniques such as Auger electron spectroscopy, secondary-ion mass spectroscopy, ion-backscattering, infrared emissivity measurements and transmission electron microscopy. Measurements of the temperature, dose and dose-rate dependences as well as of the effects of such materials variables as solute solubility, solute misfit and initial solute concentration has proved particularly valuable in understanding the mechanisms of segregation. The interpretation of these data in terms of current theoretical models which link solute segregation behavior to defect-solute binding interactions and/or to the relative diffusion rates of solute and solvent atoms the interstitial and vacancy migration mechanisms has, in general, been fairly successful and has provided considerable insight into the highly interrelated phenomena of solute-defect trapping, solute segregation, phase stability and void swelling. Specific examples in selected fcc, bcc and hcp alloy systems are discussed with particular emphasis given to the effects of radiation-induced segregation on the phase stability of single-phase and two-phase binary alloys and simple Fe-Cr-Ni alloys. (Auth.)

  19. Contribution to the aluminum-tin-zinc ternary system

    Science.gov (United States)

    Drápala, J.; Kostiuková, G.; Losertová, M.

    2017-11-01

    The Sn-Zn-Al alloys are one of significant candidates in the proposal of alternative lead-free solders for higher temperature soldering. This paper deals with the study of the aluminum-tin-zinc system. Twenty Sn-Zn-Al alloys together with six binary Sn-Zn alloys were prepared and studied experimentally. Alloys were prepared from pure Sn, Zn and Al (melting and cooling in a vacuum resistance furnace). The specimens were studied metallographically including the micro-hardness measurements, complete chemical analysis (ICP-AES, OES), X-ray micro-analysis of alloys by SEM and EDX in order to determine the composition and identification of individual phases. Significant temperatures and enthalpies of phase transformations were determined by DTA. After long-term annealing of selected alloys in vacuum followed by quenching the structural and chemical microanalyses of the present phases and their limit concentrations were carried out. The achieved results were compared with the thermodynamic modelling of the ternary Sn-Zn-Al system (computer programs THERMOCALC, MTDATA, PANDAT and databases CALPHAD, COST). Electrical resistivity, density, magnetic susceptibility and wettability of Sn-Zn-Al solders were measured as well.

  20. Effects of magnetic atoms on the properties of ternary superconductors

    International Nuclear Information System (INIS)

    Dunlap, B.D.; Shenoy, G.K.

    1980-01-01

    Until recently it has been commonly accepted that small impurities of magnetic atoms were severely detrimental to superconductivity, and that superconductivity and long-range magnetic ordering could not occur in the same materials. In known binary and pseudo-binary compounds, this is still the case. However, many recent experiments on ternary superconductors have shown that the effects of magnetism are considerably more complex. In some cases, the addition of magnetic atoms has been found to enhance superconducting properties by increasing the superconducting critical field, without significantly lowering the transition temperature. In many cases, compounds will show both superconducting and long range magnetic ordering transitions. The destruction of superconductivity by ferromagnetic ordering and the coexistence of superconductivity with antiferromagnetic ordering is now well established. Hyperfine interaction measurements have played a significant role in the investigations of these materials, including measurement of the magnitude of the exchange interaction between rare-earth spin and conduction electron spin, elucidation of the mechanism for critical field enhancement, specification of crystalline field ground states, and studies of the nature of magnetic ordering