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Sample records for ternary iii-v alloys

  1. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  2. Deviations from Vegard’s law in ternary III-V alloys

    KAUST Repository

    Murphy, S. T.

    2010-08-03

    Vegard’s law states that, at a constant temperature, the volume of an alloy can be determined from a linear interpolation of its constituent’s volumes. Deviations from this description occur such that volumes are both greater and smaller than the linear relationship would predict. Here we use special quasirandom structures and density functional theory to investigate such deviations for MxN1−xAs ternary alloys, where M and N are group III species (B, Al, Ga, and In). Our simulations predict a tendency, with the exception of AlxGa1−xAs, for the volume of the ternary alloys to be smaller than that determined from the linear interpolation of the volumes of the MAs and BAs binary alloys. Importantly, we establish a simple relationship linking the relative size of the group III atoms in the alloy and the predicted magnitude of the deviation from Vegard’s law.

  3. Understanding the vapor-liquid-solid growth and composition of ternary III-V nanowires and nanowire heterostructures

    Science.gov (United States)

    Dubrovskii, V. G.

    2017-11-01

    Based on the recent achievements in vapor-liquid-solid (VLS) synthesis, characterization and modeling of ternary III-V nanowires and axial heterostructures within such nanowires, we try to understand the major trends in their compositional evolution from a general theoretical perspective. Clearly, the VLS growth of ternary materials is much more complex than in standard vapor-solid epitaxy techniques, and even maintaining the necessary control over the composition of steady-state ternary nanowires is far from straightforward. On the other hand, VLS nanowires offer otherwise unattainable material combinations without introducing structural defects and hence are very promising for next-generation optoelectronic devices, in particular those integrated with a silicon electronic platform. In this review, we consider two main problems. First, we show how and by means of which parameters the steady-state composition of Au-catalyzed or self-catalyzed ternary III-V nanowires can be tuned to a desired value and why it is generally different from the vapor composition. Second, we present some experimental data and modeling results for the interfacial abruptness across axial nanowire heterostructures, both in Au-catalyzed and self-catalyzed VLS growth methods. Refined modeling allows us to formulate some general growth recipes for suppressing the unwanted reservoir effect in the droplet and sharpening the nanowire heterojunctions. We consider and refine two approaches developed to date, namely the regular crystallization model for a liquid alloy with a critical size of only one III-V pair at high supersaturations or classical binary nucleation theory with a macroscopic critical nucleus at modest supersaturations.

  4. Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

    International Nuclear Information System (INIS)

    Prutskij, T.; Makarov, N.; Attolini, G.

    2016-01-01

    We studied the linear polarization of the photoluminescence (PL) emission of atomically ordered GaInAsP and GaInP alloys with different ordering parameters in the temperature range from 10 to 300 K. The epitaxial layers of these alloys were grown on GaAs and Ge (001) substrates by metal organic vapor phase epitaxy. The polarization of the PL emission propagating along different crystallographic axes depends on the value of biaxial strain in the layer and changes with temperature. We calculated the PL polarization patterns for different propagation directions as a function of biaxial strain using an existing model developed for ternary atomically ordered III-V alloys. Comparing the calculated PL polarization patterns with those obtained experimentally, we separated the variation of the PL polarization due to change of biaxial strain with temperature.

  5. High bandgap III-V alloys for high efficiency optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  6. TERNARY ALLOYS OF URANIUM, COLUMBIUM, AND ZIRCONIUM

    Science.gov (United States)

    Foote, F.G.

    1960-08-01

    Ternary alloys of uranium are described which are useful as neutron- reflecting materials in a fast neutron reactor. They are especially resistant to corrosion caused by oxidative processes of gascous or aqueous origin and comprise uranium as the predominant metal with zirconiunn and niobium wherein the total content of the minor alloying elements is between 2 and 8% by weight.

  7. Ternary alloy nanocatalysts for hydrogen evolution reaction

    Indian Academy of Sciences (India)

    Home; Journals; Bulletin of Materials Science; Volume 39; Issue 2. Ternary alloy nanocatalysts for ... It is to be noted that synthesis of nanocrystallineternary alloys with precise composition is a big challenge which can be overcome by choosing an appropriate microemulsion system. High electrocatalytic activity towards ...

  8. Synthesis of ternary nitrides by mechanochemical alloying

    DEFF Research Database (Denmark)

    Jacobsen, C.J.H.; Zhu, J.J.; Lindelov, H.

    2002-01-01

    Ternary metal nitrides ( of general formula MxM'N-y(z)) attract considerable interest because of their special mechanical, electrical, magnetic, and catalytic properties. Usually they are prepared by ammonolysis of ternary oxides (MxM'O-y(m)) at elevated temperatures. We show that ternary...... nitrides by mechanochemical alloying of a binary transition metal nitride (MxN) with an elemental transition metal. In this way, we have been able to prepare Fe3Mo3N and Co3Mo3N by ball-milling of Mo2N with Fe and Co, respectively. The transformation sequence from the starting materials ( the binary...

  9. Structure of disordered alloys - II: self-consistent CCPA calculations for III-V semiconducting alloys

    International Nuclear Information System (INIS)

    Mookerjee, A.; Chaudhry, V.

    1980-09-01

    Using the chemical pseudopotential approach of Anderson and Bullett we have generated from first principles pseudo-Hamiltonians for heteropolar alloys. The one-electron density of states has been generated for Gasub(x)Insub(1-x)As using a self-consistent cluster CPA introduced earlier by one of us. Off-diagonal disorder has also been incorporated. (author)

  10. Electron scattering by native defects in III-V nitrides and their alloys

    International Nuclear Information System (INIS)

    Hsu, L.; Walukiewicz, W.

    1996-03-01

    We have calculated the electron mobilities in GaN and InN taking into consideration scattering by short range potentials, in addition to all standard scattering mechanisms. These potentials are produced by the native defects which are responsible for the high electron concentrations in nominally undoped nitrides. Comparison of the calculated mobilities with experimental data shows that scattering by short range potentials is the dominant mechanism limiting the electron mobilities in unintentionally doped nitrides with large electron concentrations. In the case of Al x Ga 1-x N alloys, the reduction in the electron concentration due to the upward shift of the conduction band relative to the native defect level can account for the experimentally measured mobilities. Resonant scattering is shown to be important when the defect and Fermi levels are close in energy

  11. A study of phase separation in ternary alloys

    Indian Academy of Sciences (India)

    Unknown

    Department of Metallurgy, Indian Institute of Science, Bangalore 560 012, India. Abstract. We have studied the evolution of microstructure when a disordered ternary alloy is quenched into a ternary miscibility gap. We have used computer simulations based on multicomponent Cahn–Hilliard (CH) equations for cA and cB, the ...

  12. Collective and tracer diffusion kinetics in the ternary random alloy

    International Nuclear Information System (INIS)

    Belova, I.V.; Murch, G.E.; Allnatt, A.R.

    2002-01-01

    In this study, collective and tracer diffusion kinetics is addressed for the ternary random alloy. A formal solution from the self-consistent theory of Moleko et al (Moleko L K, Allnatt A R and Allnatt E L 1989 Phil. Mag. A 59 141) is derived for collective diffusion and compared with the corresponding solution for the binary random alloy. Tracer diffusion in the ternary alloy is treated from the perspective of a special case of the quaternary random alloy. Results from Monte Carlo calculations for tracer and collective correlation factors (for the bcc ternary random alloy) are found to be in excellent agreement with this self-consistent theory but in only semi-quantitative agreement with the earlier theory of Manning (Manning J R 1971 Phys. Rev. B 4 1111). (author)

  13. Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys

    Science.gov (United States)

    Mäder, Kurt A.; Zunger, Alex

    1995-04-01

    First-principles and empirical pseudopotentials are used to study the effects of short-range and long-range atomic order on the electronic properties of III-V semiconductor alloys. The alloy structure with a given degree of long- or short-range order is modeled by two types of supercells: (a) Small (16-32 atom) supercells are constructed in the fashion of the special quasirandom structures (SQS) used previously to simulate random alloys [A. Zunger et al., article>Phys. Rev. Lett. 65, 353 (1990)]article>. Their electronic structure is treated via first-principles pseudopotential methods. (b) Large (˜ 1000 atom) supercells are found by a simulated-annealing technique which optimizes the atomic configuration until a given degree of short-range order is reproduced. The electronic structure is then determined using the empirical pseudopotential method. Statistical tests prove that the small cell SQS mimic the much larger supercells and thus provide an efficient means of studying the electronic band structure of disordered alloys in a non-mean-field approach. For the direct band gaps of ideally random Al1-xGaxAs, Ga1-xInxP, and Al1-xInxAs alloys, we find optical bowing parameters b=0.48,0.46,and0.52 eV, respectively. In the presence of short-range order in the form of cation clustering, we find the following: (i) Clustering elongates the Ga-P bond and shortens the In-P bond in Ga0.5In0.5P and (ii) the optical bowing of the direct band gap is greatly enhanced. This leads to an indirect-gap to direct-gap crossover in Al0.5Ga0.5As with sufficient clustering. (iii) The band-gap reduction is accompanied by a localization of band-edge wave functions on certain types of clusters. The clusters act as "isoelectronic impurities" which localize states if their concentration (i.e., the degree of short-range order) is large enough. Electrons at the conduction-band minimum localize on the cations with lower s-orbital energies. The band-gap reduction and wave-function localization of

  14. Segregation in ternary alloys: an interplay of driving forces

    International Nuclear Information System (INIS)

    Luyten, J.; Helfensteyn, S.; Creemers, C.

    2003-01-01

    Monte Carlo (MC) simulations combined with the constant bond energy (CBE) model are set up to explore and understand the general segregation behaviour in ternary alloys as a function of composition and more in particular the segregation to Cu-Ni-Al (1 0 0) surfaces. Besides its simplicity, allowing swift simulations, which are necessary for a first general survey over all possible compositions, one of the advantages of the CBE model lies in the possibility to clearly identify the different driving forces for segregation. All simulations are performed in the Grand Canonical Ensemble, using a new algorithm to determine the chemical potential of the components. Notwithstanding the simplicity of the CBE model, one extra feature is evidenced: depending on the values of the interatomic interaction parameters, in some regions of the ternary diagram, a single solid solution becomes thermodynamically unstable, leading to demixing into two conjugate phases. The simulations are first done for three hypothetical systems that are however representative for real alloy systems. The three systems are characterised by different sets of interatomic interaction parameters. These extensive simulations over the entire composition range of the ternary alloy yield a 'topographical' segregation map, showing distinct regions where different species segregate. These distinct domains originate from a variable interplay between the driving forces for segregation and attractive/repulsive interactions in the bulk of the alloy. The results on these hypothetical systems are very helpful for a better understanding of the segregation behaviour in Cu-Ni-Al and other ternary alloys

  15. Plutonium microstructures. Part 2. Binary and ternary alloys

    International Nuclear Information System (INIS)

    Cramer, E.M.; Bergin, J.B.

    1983-12-01

    This report is the second of three parts that exhibit illustrations of inclusions in plutonium metal from inherent and tramp impurities, of intermetallic and nonmetallic constituents from alloy additions, and of the effects of thermal and mechanical treatments. This part includes illustrations of the microstructures in binary cast alloys and a few selected ternary alloys that result from measured additions of diluent elements, and of the microconstituents that are characteristic of phase fields in extended alloy systems. Microhardness data are given and the etchant used in the preparation of each sample is described

  16. Electrical resistivity of liquid binary and ternary alloys

    International Nuclear Information System (INIS)

    Ornat, M.; Paja, A.

    2011-01-01

    New method of calculation of the electrical resistivity of liquid and amorphous alloys is presented. The method is based on the Morgan-Howson-Saub (MHS) model but the pseudopotentials are replaced by the scattering matrix operators. The Fermi energy is properly determined by the accurate values of the phase shifts. The model depends on a very small number of universal parameters and gives stable results. The calculated values of the resistivity agree well with available experimental data for a substantial number of binary alloys. Moreover, the results for some ternary alloys were also obtained. (orig.)

  17. A review of energy bandgap engineering in III V semiconductor alloys for mid-infrared laser applications

    Science.gov (United States)

    Yin, Zongyou; Tang, Xiaohong

    2007-01-01

    Semiconductor lasers emitting in mid-infrared (IR) range, 2-5 μm, have many important applications in semiconductor industries, military, environmental protection, telecommunications, molecular spectroscopy, biomedical surgery and researches. Different designs of the reactive regions in mid-IR laser structures have been investigated for achieving high performance devices. In this article, semiconductor mid-IR lasers with double heterostructure, quantum well, quantum cascade, quantum wire, quantum dash and quantum dot active regions have been reviewed. The performance of the lasers with these different active regions and the development of the newly emerging III-V-N materials for mid-IR applications have been discussed in details.

  18. Corrosion and wear protective composition modulated alloy coatings based on ternary Ni-P-X alloys

    DEFF Research Database (Denmark)

    Leisner, P.; Benzon, M. E.; Christoffersen, Lasse

    1996-01-01

    Scattered reporting in the litterature describes a number of ternary Ni-P-X alloyes (where X can be Co, Cr, Cu, Mo, Pd, Re or W) with promising corrosin and wear protective performance. Based on a systematic study of Ni-P-X alloys it is the intention to produce coatings with improved corrosion...

  19. Experimental Investigation of Ternary Alloys for Fusion Breeding Blankets

    Energy Technology Data Exchange (ETDEWEB)

    Choi, B. William [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chiu, Ing L. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-26

    Future fusion power plants based on the deuterium-tritium (DT) fuel cycle will be required to breed the T fuel via neutron reactions with lithium, which will be incorporated in a breeding blanket that surrounds the fusion source. Recent work by LLNL proposed the used of liquid Li as the breeder in an inertial fusion energy (IFE) power plant. Subsequently, an LDRD was initiated to develop alternatives ternary alloy liquid metal breeders that have reduced chemical reactivity with water and air compared to pure Li. Part of the work plan was to experimentally investigate the phase diagrams of ternary alloys. Of particular interest was measurement of the melt temperature, which must be low enough to be compatible with the temperature limits of the steel used in the construction of the chamber and heat transfer system.

  20. Kinetics of radiation-induced segregation in ternary alloys

    International Nuclear Information System (INIS)

    Lam, N.Q.; Kumar, A.; Wiedersich, H.

    1982-01-01

    Model calculations of radiation-induced segregation in ternary alloys have been performed, using a simple theory. The theoretical model describes the coupling between the fluxes of radiation-induced defects and alloying elements in an alloy A-B-C by partitioning the defect fluxes into those occurring via A-, B-, and C-atoms, and the atom fluxes into those taking place via vacancies and interstitials. The defect and atom fluxes can be expressed in terms of concentrations and concentration gradients of all the species present. With reasonable simplifications, the radiation-induced segregation problem can be cast into a system of four coupled partial-differential equations, which can be solved numerically for appropriate initial and boundary conditions. Model calculations have been performed for ternary solid solutions intended to be representative of Fe-Cr-Ni and Ni-Al-Si alloys under various irradiation conditions. The dependence of segregation on both the alloy properties and the irradiation variables, e.g., temperature and displacement rate, was calculated. The sample calculations are in good qualitative agreement with the general trends of radiation-induced segregation observed experimentally

  1. Microstructural Investigations On Ni-Ta-Al Ternary Alloys

    International Nuclear Information System (INIS)

    Negache, M.; Taibi, K.; Lounis, Z.; Souami, N.

    2010-01-01

    The Ni-Al-Ta ternary alloys in the Ni-rich part present complex microstructures. They are composed of multiple phases that are formed according to the nominal composition of the alloy, primary Ni(γ), Ni 3 Al(γ'), Ni 6 AlTa(τ 3 ), Ni 3 Ta(δ) or in equilibrium: two solid phases (γ'-τ 3 ), (τ 3 -δ), (τ 3 -γ), (γ-δ) or three solid phases (γ'-τ 3 -δ). The nature and the volume fraction of these phases give these alloys very interesting properties at high temperature, and this makes them attractive for specific applications. We have developed a series of ternary alloys in electric arc furnace, determining their solidification sequences using Differential Thermal Analysis (DTA), characterized by SEM-EDS, X-ray diffraction and by a microhardness tests. The follow-up results made it possible to make a correlation between the nature of the formed phases and their solidifying way into the Ni 75 Al x Ta y (x+y = 25at.%) system, which are varied and complex. In addition to the solid solution Ni (γ), the formed intermetallics compounds (γ', τ 3 and δ) has been identified and correlated with a complex balance between phases.We noticed that the hardness increases with the tantalum which has a hardening effect and though the compound Ni 3 Ta(δ) is the hardest. The below results provide a better understanding of the complex microstructure of these alloys.

  2. Development of binary and ternary titanium alloys for dental implants.

    Science.gov (United States)

    Cordeiro, Jairo M; Beline, Thamara; Ribeiro, Ana Lúcia R; Rangel, Elidiane C; da Cruz, Nilson C; Landers, Richard; Faverani, Leonardo P; Vaz, Luís Geraldo; Fais, Laiza M G; Vicente, Fabio B; Grandini, Carlos R; Mathew, Mathew T; Sukotjo, Cortino; Barão, Valentim A R

    2017-11-01

    The aim of this study was to develop binary and ternary titanium (Ti) alloys containing zirconium (Zr) and niobium (Nb) and to characterize them in terms of microstructural, mechanical, chemical, electrochemical, and biological properties. The experimental alloys - (in wt%) Ti-5Zr, Ti-10Zr, Ti-35Nb-5Zr, and Ti-35Nb-10Zr - were fabricated from pure metals. Commercially pure titanium (cpTi) and Ti-6Al-4V were used as controls. Microstructural analysis was performed by means of X-ray diffraction and scanning electron microscopy. Vickers microhardness, elastic modulus, dispersive energy spectroscopy, X-ray excited photoelectron spectroscopy, atomic force microscopy, surface roughness, and surface free energy were evaluated. The electrochemical behavior analysis was conducted in a body fluid solution (pH 7.4). The albumin adsorption was measured by the bicinchoninic acid method. Data were evaluated through one-way ANOVA and the Tukey test (α=0.05). The alloying elements proved to modify the alloy microstructure and to enhance the mechanical properties, improving the hardness and decreasing the elastic modulus of the binary and ternary alloys, respectively. Ti-Zr alloys displayed greater electrochemical stability relative to that of controls, presenting higher polarization resistance and lower capacitance. The experimental alloys were not detrimental to albumin adsorption. The experimental alloys are suitable options for dental implant manufacturing, particularly the binary system, which showed a better combination of mechanical and electrochemical properties without the presence of toxic elements. Copyright © 2017 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  3. Synthesis of ternary nitrides by mechanochemical alloying

    DEFF Research Database (Denmark)

    Jacobsen, C.J.H.; Zhu, J.J.; Lindelov, H.

    2002-01-01

    nitrides by mechanochemical alloying of a binary transition metal nitride (MxN) with an elemental transition metal. In this way, we have been able to prepare Fe3Mo3N and Co3Mo3N by ball-milling of Mo2N with Fe and Co, respectively. The transformation sequence from the starting materials ( the binary...

  4. Ternary alloy nanocatalysts for hydrogen evolution reaction

    Indian Academy of Sciences (India)

    CuFeNi (A1), CuFe2Ni (A2) and CuFeNi2 (A3) were successfully synthesized using microemulsion. It is to be noted that synthesis of nanocrystallineternary alloys with precise composition is a big challenge which can be overcome by choosing an appropriate microemulsion system. High electrocatalytic activity towards HER ...

  5. Effect of ternary alloying elements on microstructure and superelastictity of Ti-Nb alloys

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, D.C.; Mao, Y.F.; Li, Y.L.; Li, J.J.; Yuan, M. [Key Laboratory of Low Di-mensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105 (China); Faculty of Material and Optical-Electronic Physics, Xiangtan University, Xiangtan, Hunan 411105 (China); Lin, J.G., E-mail: lin_j_g@xtu.edu.cn [Key Laboratory of Low Di-mensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan 411105 (China); Faculty of Material and Optical-Electronic Physics, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2013-01-01

    The effect of ternary alloying elements (X=Ta, Fe, Zr, Mo, Sn and Si) on the microstructure, the mechanical properties and the superelasticity of Ti--22Nb-X alloys were investigated. The 1% addition of a ternary alloying element (X=Ta, Fe, Zr, Mo, Sn and Si) has a slight influence on the microstructure of the Ti-22Nb alloy. All the alloys after solution-treatment at 1073 K for 1.8 ks contain {beta} and {alpha} Double-Prime phases. The elements of Sn, Si, Fe and Ta with a high number of valence electrons or a small atomic size have a strong solid-solution strengthening effect to the {beta} phases in the alloys and the alloys with high Md{sup Macron} and low Bo{sup Macron} exhibit low elastic moduli. All the alloying elements improve the superelasticity of Ti-22Nb-X alloys. The elements, Fe, Mo, Sn and Si, which are with a high number of valence electrons and a small atomic size, strongly increase {sigma}{sub SIM} of the Ti-22Nb alloy.

  6. Electronic structure and phase equilibria in ternary substitutional alloys

    International Nuclear Information System (INIS)

    Traiber, A.J.S.; Allen, S.M.; Waterstrat, R.M.

    1996-01-01

    A reliable, consistent scheme to study phase equilibria in ternary substitutional alloys based on the tight-binding approximation is presented. With electronic parameters from linear muffin-tin orbital calculations, the computed density of states and band structures compare well with those from more accurate abinitio calculations. Disordered alloys are studied within the tight-binding coherent-potential approximation extended to alloys; energetics of ordered systems are obtained through effective pair interactions computed with the general perturbation method; and partially ordered alloys are studied with a novel simplification of the molecular coherent-potential approximation combined with the general perturbation method. The formalism is applied to bcc-based Zr-Ru-Pd alloys which are promising candidates for medical implant devices. Using energetics obtained from the above scheme, we apply the cluster- variation method to study phase equilibria for particular pseudo- binary alloys and show that results are consistent with observed behavior of electronic specific heat coefficient with composition for Zr 0.5 (Ru, Pd) 0.5

  7. Thermal transport of III-V semiconductor materials and superlattices based on molecular dynamics with optimized Tersoff potentials

    Science.gov (United States)

    Mei, Song; Knezevic, Irena

    III-V compound semiconductor materials are widely used in optoelectronics devices. III-V superlattices (SLs) make the active core of quantum cascade lasers (QCLs). Achieving room-temperature (RT), high-power, and continuous-wave (CW) operation in QCLs hinges on the understanding and engineering of thermal transport in the layers and across the interfaces. Cations in III-V ternary alloys differ a lot in mass and this effect on thermal transport is hard to capture using the scattering rates deduced from common perturbation theories. Molecular dynamics (MD) simulations can explicitly take the mass difference into consideration and are suitable for calculating the bulk thermal conductivity of III-V ternary alloys. Furthermore, the morphology and anharmonic interactions at an interface are naturally captured in MD, leading to an accurate description of interfacial transport. We adopt the Tersoff-type potentials for III-V binaries and optimize them according to acoustic phonon dispersions in order to capture thermal properties. The optimized potential is then used to directly compute the thermal boundary resistance at a heterojunction interface, as well as the thermal conductivity in the SL as a whole. US Department of Energy Award No. DE-SC0008712.

  8. Radiation-induced segregation in binary and ternary alloys

    International Nuclear Information System (INIS)

    Okamoto, P.R.; Rehn, L.E.

    1979-01-01

    A review is given of our current knowledge of radiation-induced segregation of major and minor elements in simple binary and ternary alloys as derived from experimental techniques such as Auger electron spectroscopy, secondary-ion mass spectroscopy, ion-backscattering, infrared emissivity measurements and transmission electron microscopy. Measurements of the temperature, dose and dose-rate dependences as well as of the effects of such materials variables as solute solubility, solute misfit and initial solute concentration has proved particularly valuable in understanding the mechanisms of segregation. The interpretation of these data in terms of current theoretical models which link solute segregation behavior to defect-solute binding interactions and/or to the relative diffusion rates of solute and solvent atoms the interstitial and vacancy migration mechanisms has, in general, been fairly successful and has provided considerable insight into the highly interrelated phenomena of solute-defect trapping, solute segregation, phase stability and void swelling. Specific examples in selected fcc, bcc and hcp alloy systems are discussed with particular emphasis given to the effects of radiation-induced segregation on the phase stability of single-phase and two-phase binary alloys and simple Fe-Cr-Ni alloys. (Auth.)

  9. Spectral responses in near-infrared of the mixed compounds III-V ternary and quaternary, based on GaSb

    Science.gov (United States)

    Mbow, B.; Rezzoug, N.; Peremarti, C.; Mezerreg, A.; Llinares, C.

    1993-09-01

    From the simulation of the spectral response of the different photodetector devices elaborated in our laboratory (C.E.M.), we determine the influence of geometrical and physical parameters in order to achieve the best photodetector operating at the wavelength 2.55 μm. In this paper we present: Gao{0.6}In{0.4}Sbn/Ga{0.6}In{0.4}Sbp homojunctions matched on GaSbp substrate, Ga{0.75}In{0.25}As{0.23}Sbp/GaSbn ternary heterojunction and GaSbp/Ga{0.74}In{0.26}As{0.23}Sb0.77p/GaSbn quaternary heterojunction. The GaSbp layer with an energy band gap greater than Ga{0.74}In{0.26}As{0.23}Sb0.77p optical gap will act as a window, reducing the effect of surface recombinaison. Results of the simulation are compared to experimental curves to determine the values of photoelectrical parameters (diffusion length, recombination velocity at the surface ...). Les mesures de réponse spectrale dans la gamme [0,4 eV à 2 eV] ont été effectuées sur des homojonctions, Ga{0,6}In{0,4}Sbn/Ga{0,6}In{0,4}Sbp déposées sur un substrat de GaSb et des hétérostructures ternaires Ga{0,75}In{0,25}Sbp/GaSbn et quaternaires GaSbp/Ga{0,74}In{0,26}As{0,23}Sb0,77p/GaSbn. La couche de GaSbp avec un gap plus grand que celui de Ga{0,74}In{0,26}As{0,23}Sb0,77p joue le rôle d'effet fenêtre. En s'appuyant sur les résultats de la simulation et en accordant les spectres expérimentaux aux spectres théoriques, on détermine les valeurs des paramètres photoélectriques (longueurs de diffusion, les vitesses de recombinaison en surface ... ) intervenant dans le rendement quantique.

  10. Model for the Prediction of the Hydriding Thermodynamics of Pd-Rh-Co Ternary Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Teter, D.F.; Thoma, D.J.

    1999-03-01

    A dilute solution model (with respect to the substitutional alloying elements) has been developed, which accurately predicts the hydride formation and decomposition thermodynamics and the storage capacities of dilute ternary Pd-Rh-Co alloys. The effect of varying the rhodium and cobalt compositions on the thermodynamics of hydride formation and decomposition and hydrogen capacity of several palladium-rhodium-cobalt ternary alloys has been investigated using pressure-composition (PC) isotherms. Alloying in the dilute regime (<10 at.%) causes the enthalpy for hydride formation to linearly decrease with increasing alloying content. Cobalt has a stronger effect on the reduction in enthalpy than rhodium for equivalent alloying amounts. Also, cobalt reduces the hydrogen storage capacity with increasing alloying content. The plateau thermodynamics are strongly linked to the lattice parameters of the alloys. A near-linear dependence of the enthalpy of hydride formation on the lattice parameter was observed for both the binary Pd-Rh and Pd-Co alloys, as well as for the ternary Pd-Rh-Co alloys. The Pd-5Rh-3Co (at. %) alloy was found to have similar plateau thermodynamics as a Pd-10Rh alloy, however, this ternary alloy had a diminished hydrogen storage capacity relative to Pd-10Rh.

  11. III-V microelectronics

    CERN Document Server

    Nougier, JP

    1991-01-01

    As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental p

  12. Atomic-scale properties of Ni-based FCC ternary, and quaternary alloys

    International Nuclear Information System (INIS)

    Tamm, Artur; Aabloo, Alvo; Klintenberg, Mattias; Stocks, Malcolm; Caro, Alfredo

    2015-01-01

    The aim of this study is to characterize some atomic-scale properties of Ni-based FCC multicomponent alloys. For this purpose, we use Monte Carlo method combined with density functional theory calculations to study short-range order (SRO), atomic displacements, electronic density of states, and magnetic moments in equimolar ternary NiCrCo, and quaternary NiCrCoFe alloys. According to our study, the salient features for the ternary alloy are a negative SRO parameter between Ni–Cr and a positive between Cr–Cr pairs as well as a weakly magnetic state. For the quaternary alloy we predict negative SRO parameter for Ni–Cr and Ni–Fe pairs and positive for Cr–Cr and Fe–Fe pairs. Atomic displacements for both ternary and quaternary alloys are negligible. In contrast to the ternary, the quaternary alloy shows a complex magnetic structure. The electronic structure of the ternary and quaternary alloys shows differences near the Fermi energy between a random solid solution and the predicted structure with SRO. Despite that, the calculated EXAFS spectra does not show enough contrast to discriminate between random and ordered structures. The predicted SRO has an impact on point-defect energetics, electron–phonon coupling and thermodynamic functions and thus, SRO should not be neglected when studying properties of these two alloys

  13. Effect of ternary alloying elements on microstructure and mechanical property of Nb-Si based refractory intermetallic alloy

    International Nuclear Information System (INIS)

    Kim, W.Y.; Kim, H.S.; Kim, S.K.; Ra, T.Y.; Kim, M.S.

    2005-01-01

    Microstructure and mechanical property at room temperature and at 1773 K of Nb-Si based refractory intermetallic alloys were investigated in terms of compression and fracture toughness test. Mo and V were chosen as ternary alloying elements because of their high melting points, atomic sizes smaller than Nb. Both ternary alloying elements were found to have a significant role in modifying the microstructure from dispersed structure to eutectic-like structure in Nb solid solution/Nb 5 Si 3 intermetallic composites. The 0.2% offset yield strength at room temperature increased with increasing content of ternary elements in Nb solid solution and volume fraction of Nb 5 Si 3 . At 1773 K, Mo addition has a positive role in increasing the yield strength. On the other hand, V addition has a role in decreasing the yield strength. The fracture toughness of ternary alloys was superior to binary alloys. Details will be discussed in correlation with ternary alloying, volume fraction of constituent phase, and the microstructure. (orig.)

  14. Review of Reactivity Experiments for Lithium Ternary Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Jolodosky, A. [Univ. of California, Berkeley, CA (United States); Bolind, A. [Univ. of California, Berkeley, CA (United States); Fratoni, M. [Univ. of California, Berkeley, CA (United States)

    2015-09-28

    Lithium is often the preferred choice as breeder and coolant in fusion blankets as it offers high tritium breeding, excellent heat transfer and corrosion properties, and most importantly, it has very high tritium solubility and results in very low levels of tritium permeation throughout the facility infrastructure. However, lithium metal vigorously reacts with air and water and exacerbates plant safety concerns. Consequently, Lawrence Livermore National Laboratory (LLNL) is attempting to develop a lithium-based alloy—most likely a ternary alloy—which maintains the beneficial properties of lithium (e.g. high tritium breeding and solubility) while reducing overall flammability concerns for use in the blanket of an inertial fusion energy (IFE) power plant. The LLNL concept employs inertial confinement fusion (ICF) through the use of lasers aimed at an indirect-driven target composed of deuterium-tritium fuel. The fusion driver/target design implements the same physics currently experimented at the National Ignition Facility (NIF). The plant uses lithium in both the primary coolant and blanket; therefore, lithium related hazards are of primary concern. Reducing chemical reactivity is the primary motivation for the development of new lithium alloys, and it is therefore important to come up with proper ways to conduct experiments that can physically study this phenomenon. This paper will start to explore this area by outlining relevant past experiments conducted with lithium/air reactions and lithium/water reactions. Looking at what was done in the past will then give us a general idea of how we can setup our own experiments to test a variety of lithium alloys.

  15. Properties of ternary NiFeW alloy coating by jet electrodeposition

    Indian Academy of Sciences (India)

    Jet electrodeposition; NiFeW alloy coating; current efficiency; microstructure; microhardness. Abstract. In this paper, ternary NiFeW alloy coatings were prepared by jet electrodeposition, and the effects of lord salt concentration, jet speed, current density and temperature on the properties of the coatings, including the ...

  16. Aluminum nitride, Scandium nitride, and Aluminum-Scandium-Nitride ternary alloys : Structural, optical, and electrical properties

    Science.gov (United States)

    Deng, Ruopeng

    reduction in direct bandgap Eg = 6.15-9.32x (eV) which itself has implication in III-V compound bandgap engineering. (3) All optical phonons mode frequencies measured from IR specular reflectance and Raman scattering red-shift as more Sc atoms are incorporated: ω[E2(H)] = 658 - 233x, ω[A1(TO)] = 612 - 159x, ω[E1(TO)] = 681 - 209x, ω[A1(LO)] = 868 - 306x (all units in cm-1). The phonon softening effect is understood as the increase in ionicity and weakening in covalent bond strength, which are believed to be the major factors leading to piezoelectric enhancement. Similarly, Sc1-xAlxN ternary alloy also exhibit changes in lattice structure and bandgaps as seen in samples expitaxially deposited on MgO(001) substrate at 950°C. Measured relaxed lattice constant assuming a Poisson ratio of 0.2 is shrinking nonlinearly with Al concentration x because rock-salt AlN has a smaller lattice constant than ScN. X point bandgap value and near-Gamma-point interband transition energy are greater with more Al incorporated: Eg(X) = 2.50+2.51 x (eV), and Eg(Gamma) = 3.80 + 1.45 x (eV), implying that band structure of this ternary alloy is possibly under the effect of rock-salt AlN indirect bandgap that is around 5 eV from simulation. Carrier weak localization is also observed at low temperature and becomes dominant as Al concentration increases, in which normal phonon scattering in ScN is over-taken by electron coherent back-scattering by Al atoms. Overall, structural, optical, and electrical characterization and analysis have been conducted on AlN, ScN, and Al-Sc-N ternary alloy materials, the results of which could help to improve existing processes and also to understand more fundamental properties.

  17. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  18. New method for the simultaneous condensation of complete ternary alloy systems under ultrahigh vacuum conditions

    International Nuclear Information System (INIS)

    Mehrtens, A.; Moske, M.; Samwer, K.

    1988-01-01

    An ultrahigh vacuum apparatus is described for the simultaneous condensation of complete ternary alloy systems. Three singly controlled electron beam evaporation sources provide a constant evaporation rate of the different elements. A specially designed rotating mask guarantees a concentration gradient on the substrate according to a ternary phase diagram. The conversion of the actual concentration profile into a standard ternary phase diagram is done by simple computer calculations. They involve corrections for the beam characteristics of the evaporation sources and for the rotating mask. As an example, measurements for the Zr--Cu--Co system are given. The concentration range for the amorphous phase is compared with thermodynamic predictions using Miedema's parameter

  19. Effect on strength of ternary alloying additions in L12 intermetallics

    International Nuclear Information System (INIS)

    Wu Yuanpang.

    1991-01-01

    The thermodynamic properties of {111} antiphase boundaries (APBs) as well as the site preference of ternary additions in an A 3 B intermetallic with L1 2 structure are studied, using a thermodynamic model. A survey of the results from a variety of ternary alloying additions to Ni 3 Al has shown that there is a conflict in the actual role which solid solution strengthening plays in the athermal increment of yield strength. For instance, a good quantitative agreement with linear concentration law is observed only in alloys with stoichiometric compositions but not in the general case of non-stoichiometric alloys. In the light of the possibility that micro-segregation could explain the experimental discrepancy, the author extends the binary solid solution strengthening theory to the ternary system in an L1 2 structure for the four real systems of Ni-Al-Si, Ni-Al-Ti, Ni-Al-Hf, and Ni-Al-V. It is found that ternary site preference plays an important role in the ternary solid solution strengthening theory with L1 2 structure. Good quantitative agreement was found between the calculated and experimentally measured strength for both stoichiometric and nonstoichiometric alloys

  20. First-principles study of ternary bcc alloys using special quasi-random structures

    International Nuclear Information System (INIS)

    Jiang Chao

    2009-01-01

    Using a combination of exhaustive enumeration and Monte Carlo simulated annealing, we have developed special quasi-random structures (SQSs) for ternary body-centered cubic (bcc) alloys with compositions of A 1 B 1 C 1 , A 2 B 1 C 1 , A 6 B 1 C 1 and A 2 B 3 C 3 , respectively. The structures possess local pair and multisite correlation functions that closely mimic those of the random bcc alloy. We employed the SQSs to predict the mixing enthalpies, nearest neighbor bond length distributions and electronic density of states of bcc Mo-Nb-Ta and Mo-Nb-V solid solutions. Our convergence tests indicate that even small-sized SQSs can give reliable results. Based on the SQS energetics, the predicting powers of the existing empirical ternary extrapolation models were assessed. The present results suggest that it is important to take into account the ternary interaction parameter in order to accurately describe the thermodynamic behaviors of ternary alloys. The proposed SQSs are quite general and can be applied to other ternary bcc alloys.

  1. Semiconducting III-V compounds

    CERN Document Server

    Hilsum, C; Henisch, Heinz R

    1961-01-01

    Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, f

  2. The novel eutectic microstructures of Si-Mn-P ternary alloy

    International Nuclear Information System (INIS)

    Wu Yaping; Liu Xiangfa

    2010-01-01

    The microstructures of Si-Mn-P alloy manufactured by the technique of combining phosphorus transportation and alloy melting were investigated using electron probe micro-analyzer (EPMA). The phase compositions were determined by energy spectrum and the varieties of eutectic morphologies were discussed. It is found that there is no ternary compound but Si, MnP and MnSi 1.75-x could appear when the Si-Mn-P alloy's composition is proper. Microstructure is greatly refined by rapid solidification technique and the amount of eutectic phases change with faster cooling rates. Moreover, primary Si or MnP are surrounded firstly by the binary eutectic (Si + MnP) and then the ternary eutectic (Si + MnSi 1.75-x + MnP) which also exhibit binary structures due to divorced eutectic determined by the particularity of some Si-Mn-P alloys.

  3. Corrosion Characteristics of Ti-29Nb-xHf Ternary Alloy for Biomaterials

    Energy Technology Data Exchange (ETDEWEB)

    Pak, Sun Young; Choi, Han Chul [Chosun Univ., Kwangju (Korea, Republic of)

    2015-12-15

    The Cp-Ti and Ti-6Al-4V alloys were widely used for dental materials due to their mechanical properties and good corrosion resistance. However, Cp-Ti was known as bio-inert materials, Ti-6Al-4V alloy has a problem such as high Young modulus, potential loss of the surrounding bone, and to the release of potentially toxic ions from the alloy. To overcome this problem, Ti alloys containing Nb and Hf elements have been used for biomaterials due to low toxicity and high corrosion resistance. Especially, alloying element of Nb was known as β phase stabilizer. The β phase alloy was widely used to replace currently used implant materials. The corrosion resistances of Ti-29Nb-xHf ternary alloys were dependent on Hf content in oral environment solution.

  4. Liesegang bands in internally oxidized AgCd-based ternary alloys

    International Nuclear Information System (INIS)

    Van Rooijen, V.A.; Van Royen, E.W.; Vrijen, J.; Radelaar, S.

    1975-01-01

    The origin of the occurrence of Liesegang band formation (periodic precipitation) during internal oxidation of AgCd alloys containing concentrations of Be, Mg, Al, or Y were investigated both experimentally and theoretically. A simple model of internal oxidation of ternary alloys is presented. The theory predicts band spacing as a function of temperature, Cd concentration, and concentration of the third element in good agreement with experimental results. (U.S.)

  5. Properties of ternary NiFeW alloy coating by jet electrodeposition

    Indian Academy of Sciences (India)

    2018-03-23

    Mar 23, 2018 ... Abstract. In this paper, ternary NiFeW alloy coatings were prepared by jet electrodeposition, and the effects of lord salt concentration, jet speed, current density and temperature on the properties of the coatings, including the composition, microhardness, surface morphology, structure and corrosion ...

  6. Superconductivity and specific heat measurements in V--Nb--Ta ternary alloys

    International Nuclear Information System (INIS)

    Wang, R.Y.P.

    1977-01-01

    The correlation between the superconducting transition temperature T/sub c/ with electronic specific heat coefficient γ and Debye temperature theta/sub D/ in some isoelectronic ternary V--Nb--Ta alloys is investigated. It has been known that the variation of theta/sub D/ with concentration in both V--Nb and V--Ta systems is clearly of the same curvature as that of T/sub c/ and γ. In Ta--Nb alloys, however, over most of the concentration range theta/sub D/ seems to have a slight negative curvature while T/sub c/ and γ curve upwards. (But beyond approx. 80 at. % Nb theta/sub D/ rises rapidly to the pure Nb value.) By choosing alloys along a line connecting Ta and V 25 --Nb 75 which is close to the Nb--Ta side of the Gibb's triangle the extent to which the Nb--Ta type of behavior persists in this ternary system can be estimated. A model proposed by Miedema that takes into account the variation of properties caused by possible charge transfer among constituent atoms in an alloy has been found to apply almost quantitatively for nearly all binary alloy systems whose experimental data are available, including those for which Hopfield's method fails. A previous test of the extension of Miedema's empirical model into ternary alloys shows qualitatively correct behavior for intra-row Zr/sub x/Nb/sub 1-2x/Mo/sub x/ alloys. The good agreement between the predicted values of γ and T/sub c/ and the experimental values in the inter-row ternary V--Nb--Ta system studied here gives another and better test of the application of Miedema's model

  7. Ternary diffusion in Cu-rich fcc Cu–Al–Si alloys at 1073 K

    International Nuclear Information System (INIS)

    Liu, Dandan; Zhang, Lijun; Du, Yong; Xu, Honghui; Jin, Zhanpeng

    2013-01-01

    Highlights: •Interdiffusivities in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined. •The present results were compared with experimental data in boundary binary systems. •The present results were validated by thermodynamic constraints and Fick’s law. •The sign of ternary cross diffusivities was predicted in terms of thermodynamics. -- Abstract: Utilizing six groups of bulk diffusion couples and with electron probe microanalysis technique, the composition dependence of ternary interdiffusion coefficients in Cu-rich fcc Cu–Al–Si alloys at 1073 K were determined by the Matano-Kirkaldy method. Using a three-dimensional representation, the obtained main ternary diffusion coefficients were found to be consistent with the experimental data in boundary binaries available in the literature. The reliability of the obtained interdiffusivities was further validated by thermodynamic constraints as well as by Fick’s second law applied to numerical simulation. The sign of the ternary cross diffusivities in fcc Cu–Al–Si alloys, which shows a noticeable effect on microstructure, was also successfully predicted in terms of thermodynamics

  8. Effects of varying indium composition on the thermoelectric properties of In{sub x}Ga{sub 1-x}Sb ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Nirmal Kumar, V.; Hayakawa, Y. [Shizuoka University, Graduate School of Science and Technology, Hamamatsu (Japan); Shizuoka University, Research Institute of Electronics, Hamamatsu, Shizuoka (Japan); Arivanandan, M. [Anna University, Centre for Nanoscience and Technology, Chennai (India); Koyoma, T. [Shizuoka University, Research Institute of Electronics, Hamamatsu, Shizuoka (Japan); Udono, H. [Ibaraki University, Faculty of Engineering, Hitachi (Japan); Inatomi, Y. [Japan Aerospace Exploration Agency, Institute of Space and Astronautical Science, Sagamihara (Japan); SOKENDAI (The Graduate University for Advanced Studies), School of Physical Sciences, Sagamihara (Japan)

    2016-10-15

    In{sub x}Ga{sub 1-x}Sb (x = 0-1), a III-V ternary alloy, was grown by melt solidification process. The effects of varying indium composition on the thermoelectric properties of In{sub x}Ga{sub 1-x}Sb polycrystals were studied for the first time. The segregations of indium and gallium elements were observed in the grown crystals, and the defects present in crystals were revealed by etching process. Room-temperature Raman measurement revealed that the dominant optical modes of phonon vibrations in InSb and GaSb binaries were suppressed in In{sub x}Ga{sub 1-x}Sb ternaries. The in-phase vibrations of acoustic mode phonons were scattered more effectively in In{sub x}Ga{sub 1-x}Sb by the present defects, and the relative value of lattice thermal conductivity was reduced. Thus, the thermal conductivity of InSb and GaSb binaries was drastically reduced in In{sub x}Ga{sub 1-x}Sb by alloy scattering. InSb indicated the highest ZT 0.51 because of its higher power factor 70 μW/cm K{sup 2}. Next to InSb, In{sub 0.8}Ga{sub 0.2}Sb had higher ZT value of 0.29 at 600 K among the In{sub x}Ga{sub 1-x}Sb ternaries. The ZT of In{sub 0.8}Ga{sub 0.2}Sb was increased about 30 times than that of GaSb by the increase of power factor as well as the decrease of thermal conductivity. (orig.)

  9. Molecular dynamics investigation of the thermal conductivity of ternary silicon–germanium–tin alloys

    Science.gov (United States)

    Lee, Yongjin; Hwang, Gyeong S.

    2017-12-01

    A further reduction of the thermal conductivity (κ) of silicon-germanium (SiGe) alloys is indispensable for their use as thermoelectric materials. Thus far, heteroatom-doped and nanostructured SiGe systems have been mainly synthesized and tested. This work presents a possibility of reducing the κ of SiGe by alloying with tin (Sn). Our molecular dynamics simulations predict that the κ of ternary SiGeSn alloys can be 40% lower than those of binary SiGe and GeSn alloys due mainly to increased mass disorder scattering of phonons. Our findings provide insight into the mechanism of κ suppression in multielement alloys and guidance on how to design them for thermoelectric applications.

  10. Metastable Phase Separation and Concomitant Solute Redistribution of Liquid Fe-Cu-Sn Ternary Alloy

    International Nuclear Information System (INIS)

    Xiao-Mei, Zhang; Wei-Li, Wang; Ying, Ruan; Bing-Bo, Wei

    2010-01-01

    Liquid Fe-Cu-Sn ternary alloys with lower Sn contents are usually assumed to display a peritectic-type solidification process under equilibrium condition. Here we show that liquid Fe 47.5 Cu 47.5 Sn 5 ternary alloy exhibits a metastable immiscibility gap in the undercooling range of 51–329 K (0.19T L ). Macroscopic phase separation occurs once undercooling exceeds 196 K and causes the formation of a floating Fe-rich zone and a descending Cu-rich zone. Solute redistribution induces the depletion of Sn concentration in the Fe-rich zone and its enrichment in the Cu-rich zone. The primary Fe phase grows dendritically and its growth velocity increases with undercooling until the appearance of notable macrosegregation, but will decrease if undercooling further increases beyond 236 K. The microsegregation degrees of both solutes in Fe and Cu phases vary only slightly with undercooling. (condensed matter: structure, mechanical and thermal properties)

  11. A first-principles model for anomalous segregation in dilute ternary tungsten-rhenium-vacancy alloys

    Science.gov (United States)

    Wróbel, J. S.; Nguyen-Manh, D.; Kurzydłowski, K. J.; Dudarev, S. L.

    2017-04-01

    The occurrence of segregation in dilute alloys under irradiation is a highly unusual phenomenon that has recently attracted attention, stimulated by the interest in the fundamental properties of alloys as well as by their applications. The fact that solute atoms segregate in alloys that, according to equilibrium thermodynamics, should exhibit full solubility, has significant practical implications, as the formation of precipitates strongly affects physical and mechanical properties of alloys. A lattice Hamiltonian, generalizing the so-called ‘ABV’ Ising model and including collective many-body inter-atomic interactions, has been developed to treat rhenium solute atoms and vacancies in tungsten as components of a ternary alloy. The phase stability of W-Re-vacancy alloys is assessed using a combination of density functional theory (DFT) calculations and cluster expansion (CE) simulations. The accuracy of CE parametrization is evaluated against the DFT data, and the cross-validation error is found to be less than 4.2 meV/atom. The free energy of W-Re-vacancy ternary alloys is computed as a function of temperature using quasi-canonical Monte Carlo simulations, using effective two, three and four-body interactions. In the low rhenium concentration range (chemical Re-W and Re-vacancy interactions and short-range order parameters. DFT calculations show that rhenium-vacancy binding energies can be as high as 1.5 eV if the rhenium/vacancy ratio is in the range from 2.4 to 6.6. The predicted Re clustering agrees with experimental observations of precipitation in self-ion irradiated W-2 % Re alloys and neutron-irradiated alloys containing 1.4 at. % Re.

  12. Investigation of biodegradable ternary Mg-Zn-La magnesium alloys

    Science.gov (United States)

    Özarslan, Selma; Şevik, Hüseyin; Sorar, Idris

    2018-02-01

    In this paper, the effect of Lanthanum (1, 2 and 4 wt.%) addition to biodegradable Mg-4Zn alloy and its influence on the microstructure and mechanical properties of the alloy were investigated. The alloys were produced under protective atmosphere by a cold chamber high pressure-die casting process. Microstructure analysis of the samples were carried out by scanning electron microscopy (SEM), an energy-dispersive spectrometer (EDS) and X-ray diffraction (XRD). X-ray difractometry revealed that the main phases are α-Mg and MgZn in the whole alloys. Also, the Mg17La2 phase was observed with addition of La. Hardness and tensile properties were examined to investigate the mechanical properties. Results showed that the yield strength and nanohardness of main alloy were improved from 40 % (100 MPa to 140 MPa), 24 % (from 1.04 GPa to 1.29 GPa) with addition of 4 wt.% La, respectively. However, elongation was decreased with increasing of La content.

  13. E centers in ternary Si1−x−yGexSny random alloys

    KAUST Repository

    Chroneos, Alexander

    2009-09-14

    Density functional theory calculations are used to study the association of arsenic (As) atoms to lattice vacancies and the formation of As-vacancy pairs, known as E centers, in the random Si0.375Ge0.5Sn0.125 alloy. The local environments are described by 32-atom special quasirandom structures that represent random Si1−x−yGexSny alloys. It is predicted that the nearest-neighbor environment will exert a strong influence on the stability of E centers in ternary Si0.375Ge0.5Sn0.125.

  14. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.

    2010-06-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a computationally efficient way to describe the random nature. We systematically study the efficacy of the methodology and generate a number of special quasirandom cells for future use. In order to demonstrate the applicability of the technique, the electronic structures of E centers in Si1-xGex and Si1-x -yGexSny alloys are discussed for a range of nearest neighbor environments. © 2010 Elsevier B.V. All rights reserved.

  15. High Permeability Ternary Palladium Alloy Membranes with Improved Sulfur and Halide Tolerances

    Energy Technology Data Exchange (ETDEWEB)

    K. Coulter

    2010-12-31

    The project team consisting of Southwest Research Institute{reg_sign} (SwRI{reg_sign}), Georgia Institute of Technology (GT), the Colorado School of Mines (CSM), TDA Research, and IdaTech LLC was focused on developing a robust, poison-tolerant, hydrogen selective free standing membrane to produce clean hydrogen. The project completed on schedule and on budget with SwRI, GT, CSM, TDA and IdaTech all operating independently and concurrently. GT has developed a robust platform for performing extensive DFT calculations for H in bulk palladium (Pd), binary alloys, and ternary alloys of Pd. Binary alloys investigated included Pd96M4 where M = Li, Na, Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Y, Zr, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te, Hf, Ta, W, Re, Os, Ir, Pt, Au, Tl, Pb, Bi, Ce, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. They have also performed a series of calculations on Pd{sub 70}Cu{sub 26}Ag{sub 4}, Pd{sub 70}Cu{sub 26}Au{sub 4}, Pd{sub 70}Cu{sub 26}Ni{sub 4}, Pd{sub 70}Cu{sub 26}Pt{sub 4}, and Pd{sub 70}Cu{sub 26}Y{sub 4}. SwRI deposited and released over 160 foils of binary and ternary Pd alloys. There was considerable work on characterizing and improving the durability of the deposited foils using new alloy compositions, post annealing and ion bombardment. The 10 and 25 {micro}m thick films were sent to CSM, TDA and IdaTech for characterization and permeation testing. CSM conducted over 60 pure gas permeation tests with SwRI binary and ternary alloy membranes. To date the PdAu and PdAuPt membranes have exhibited the best performance at temperatures in the range of 423-773 C and their performance correlates well with the predictions from GT. TDA completed testing under the Department of Energy (DOE) WGS conditions on over 16 membranes. Of particular interest are the PdAuPt alloys that exhibited only a 20% drop in flux when sulfur was added to the gas mixture and the flux was completely recovered when the sulfur flow was stopped. IdaTech tested binary

  16. Development of ternary alloy cathode catalysts for phosphoric acid fuel cells: Final report

    Energy Technology Data Exchange (ETDEWEB)

    Jalan, V.; Kosek, J.; Giner, J.; Taylor, E. J.; Anderson, E.; Bianchi, V.; Brooks, C.; Cahill, K.; Cropley, C.; Desai, M.; Frost, D.; Morriseau, B.; Paul, B.; Poirier, J.; Rousseau, M.; Swette, L.; Waterhouse, R.

    1988-11-01

    The overall objective of the program was the identification development and incorporation of high activity platinum ternary alloys on corrosion resistant supports, for use in advanced phosphoric acid fuel cells. Two high activity ternary alloys, Pr-Cr-Ce and Pt-Ni-Co, both supported on Vulcan XC-72, were identified during the course of the program. The Pr-Ni-Co system was selected for optimization, including preparation and evaluation on corrosion resistant supports such as 2700/degree/C heat-treated Vulcan XC-72 and 2700/degree/ heat-treated Black Pearls 2000. A series of tests identified optimum metal ratios, heat-treatment temperatures and heat-treatment atmospheres for the Pr-Ni-Co system. During characterization testing, it was discovered that approximately 50% of the nickel and cobalt present in the starting material could be removed, subsequent to alloy formation, without degrading performance. Extremely stable full cell performance was observed for the Pt-Ni-Co system during a 10,000 hour atmosphere pressure life test. Several theories are proposed to explain the enhancement in activity due to alloy formation. Recommendations are made for future research in this area. 62 refs., 23 figs., 27 tabs.

  17. Development of aluminum (Al5083)-clad ternary Ag-In-Cd alloy for JSNS decoupled moderator

    International Nuclear Information System (INIS)

    Teshigawara, M.; Harada, M.; Saito, S.; Oikawa, K.; Maekawa, F.; Futakawa, M.; Kikuchi, K.; Kato, T.; Ikeda, Y.; Naoe, T.; Koyama, T.; Ooi, T.; Zherebtsov, S.; Kawai, M.; Kurishita, H.; Konashi, K.

    2006-01-01

    To develop Ag (silver)-In (indium)-Cd (cadmium) alloy decoupler, a method is needed to bond the decoupler between Al alloy (Al5083) and the ternary Ag-In-Cd alloy. We found that a better HIP condition was temperature, pressure and holding time at 803 K, 100 MPa and 10 min. for small test pieces (φ22 mm in dia. x 6 mm in height). Hardened layer due to the formation of AlAg 2 was found in the bonding layer, however, the rupture strength of the bonding layer is more than 30 MPa, the calculated design stress. Bonding tests of a large size piece (200 x 200 x 30 mm 3 ), which simulated the real scale, were also performed according to the results of small size tests. The result also gave good bonding and enough required-mechanical-strength

  18. Investigations of binary and ternary phase change alloys for future memory applications

    International Nuclear Information System (INIS)

    Rausch, Pascal

    2012-01-01

    The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In 3 Sb 1 Te 2 and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In 3 Sb 1 Te 2 . At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe 2 . For the first time a complete description of In 3 Sb 1 Te 2 alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge 2 Sb 2 Te 5 /GeTe or prototype systems like AgInTe 2 and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge 3 Sn 1 Te 4 to Ge 2 Sn 2 Te 4 . These alloys are investigated with respect to constraint theory.

  19. Robust tribo-mechanical and hot corrosion resistance of ultra-refractory Ta-Hf-C ternary alloy films.

    Science.gov (United States)

    Yate, Luis; Coy, L Emerson; Aperador, Willian

    2017-06-08

    In this work we report the hot corrosion properties of binary and ternary films of the Ta-Hf-C system in V 2 O 5 -Na 2 SO 4 (50%wt.-50%wt.) molten salts at 700 °C deposited on AISI D3 steel substrates. Additionally, the mechanical and nanowear properties of the films were studied. The results show that the ternary alloys consist of solid solutions of the TaC and HfC binary carbides. The ternary alloy films have higher hardness and elastic recoveries, reaching 26.2 GPa and 87%, respectively, and lower nanowear when compared to the binary films. The corrosion rates of the ternary alloys have a superior behavior compared to the binary films, with corrosion rates as low as 0.058 μm/year. The combination and tunability of high hardness, elastic recovery, low nanowear and an excellent resistance to high temperature corrosion demonstrates the potential of the ternary Ta-Hf-C alloy films for applications in extreme conditions.

  20. Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys.

    Science.gov (United States)

    De Leonardis, Francesco; Troia, Benedetto; Soref, Richard A; Passaro, Vittorio M N

    2016-09-13

    Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. The wide Si, Ge and Sn transparencies allow the use of binary and ternary alloys extended to mid-IR wavelengths, where nonlinearities can also be employed. However, neither theoretical or experimental predictions of nonlinear features in SiGeSn alloys are reported in the literature. For the first time, a rigorous and detailed physical investigation is presented to estimate the two photon absorption (TPA) coefficient and the Kerr refractive index for the SiGeSn alloy up to 12 μm. The TPA spectrum, the effective TPA wavelength cut-off, and the Kerr nonlinear refractive index have been determined as a function of alloy compositions. The promising results achieved can pave the way to the demonstration of on-chip nonlinear-based applications, including mid-IR spectrometer-on-a-chip, all-optical wavelength down/up-conversion, frequency comb generation, quantum-correlated photon-pair source generation and supercontinuum source creation, as well as Raman lasing.

  1. Modeling of anodic dissolution of U Pu Zr ternary alloy in the molten LiCl KCl electrolyte

    Science.gov (United States)

    Iizuka, Masatoshi; Kinoshita, Kensuke; Koyama, Tadafumi

    2005-02-01

    The metallic fuel anode in the molten salt electrorefining step for the pyrometallurgical reprocessing was modeled based on the findings from the anodic dissolution tests using a U Pu Zr ternary alloy. This anode model simulates selective dissolution of uranium and plutonium at lower anode potential, growth of a diffusion controlling layer consisting of a mixture of the molten salt electrolyte and the remaining zirconium metal, and simultaneous dissolution of all the constituents at higher anode potential. The calculation with this model reproduced well the actual anodic behavior of the U Pu Zr ternary alloy such as two-step rapid rise in the anode potential.

  2. Phase diagrams of the ternary alloy with a single-ion anisotropy in the mean-field approximation

    International Nuclear Information System (INIS)

    Dely, J.; Bobak, A.

    2006-01-01

    The phase diagram of the AB p C 1-p ternary alloy consisting of Ising spins S A =32, S B =2, and S C =52 is investigated by the use of a mean-field theory based on the Bogoliubov inequality for the Gibbs free energy. The effect of the single-ion anisotropy on the phase diagrams is discussed by changing values of the parameters in the model Hamiltonian and comparison is made with the recently reported finite-temperature phase diagrams for the ternary alloy having spin S B =1

  3. Swelling of austenitic iron-nickelchromium ternary alloys during fast neutron irradiation

    International Nuclear Information System (INIS)

    Garner, F.A.; Brager, H.R.

    1984-01-01

    Swelling data are now available for 15 iron-nickel-chromium ternary alloys irradiated to exposures as high as 110 displacements per atom (dpa) in Experimental Breeder Reactor-II (EBR-II) between 400 and 650 0 C. These data confirm trends observed at lower exposure levels and extend the generality of earlier conclusions to cover a broader range of composition and temperature. It appears that all austenitic iron-nickel-chromium ternary alloys eventually approach an intrinsic swelling rate of about1%/dpa over a range of temperature even wider than studied in this experiment. The duration of the transient regime that precedes the attainment of this rate is quite sensitive to nickel and chromium content, however. At nickel and chromium levels typical of 300 series steels, swelling does not saturate at engineering-relevant levels. However, there appears to be a tendency toward saturation that increases with declining temperature, increasing nickel and decreasing chromium levels. Comparisons of these results are made with those of similar studies conducted with charged particles. Conclusions are then drawn concerning the validity of charged particle simulation studies to determine the compositional and temperature dependence of swelling

  4. The band gap of II-Vi ternary alloys in a tight-binding description

    Energy Technology Data Exchange (ETDEWEB)

    Olguin, Daniel; Blanquero, Rafael [Instituto Politecnico Nacional, Mexico, D.F (Mexico); De Coss, Romeo [Instituto Politecnico Nacional, Yucatan (Mexico)

    2001-02-01

    We present tight-binding calculations for the band gap of II-Vi pseudobinary ternary alloys. We use an sp{sup 3} s* tight-binding Hamiltonian which include spin-orbit coupling. The band gap composition dependence is calculated using a extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare quite well with the experimental data, both for the ternary alloys with wide band gap and for the narrow band gap ones. [Spanish] Presentamos el calculo de la banda de energia prohibida de aleaciones ternarias de compuestos II-VI. El calculo, que incluye interaccion espin-orbita, se hace con el metodo de enlace fuerte, utilizando una base ortogonal de cinco orbitales atomicos por atomo (sp{sup 3} s*), en conjunto con la aproximacion del cristal virtual. En la aproximacion del cristal virtual, incluimos un factor de correccion que toma en cuenta la no linealidad de la banda de energia prohibida como funcion de la concentracion. Con esta correccion nuestros resultados reproducen aceptablemente los datos experimentales hallados en la literatura.

  5. Transformational III-V Electronics

    KAUST Repository

    Nour, Maha A.

    2014-04-01

    Flexible electronics using III-V materials for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. This thesis describes a complementary metal oxide semiconductor (CMOS) compatible process for transforming traditional III-V materials based electronics into flexible one. The thesis reports releasing 200 nm of Gallium Arsenide (GaAs) from 200 nm GaAs / 300 nm Aluminum Arsenide (AlAs) stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes that contributes to the better transparency (45 % at 724 nm wavelengths) observed. Fabrication of metal oxide semiconductor capacitor (MOSCAPs) on GaAs is followed by releasing it to have devices on flexible 200 nm GaAs. Similarly, flexible GaSb and InP fabrication process is also reported to transform traditional electronics into large-area flexible electronics.

  6. The thermodynamic stability induced by solute co-segregation in nanocrystalline ternary alloys

    International Nuclear Information System (INIS)

    Liang, Tao; Chen, Zheng; Zhang, Jinyong; Zhang, Ping; Yang, Xiaoqin

    2017-01-01

    The grain growth and thermodynamic stability induced by solute co-segregation in ternary alloys are presented. Grain growth behavior of the single-phase supersaturated grains prepared in Ni-Fe-Pb alloy melt at different undercoolings was investigated by performing isothermal annealings at T = 400 C-800 C. Combining the multicomponent Gibbs adsorption equation and Guttmann's grain boundary segregation model, an empirical relation for isothermal grain growth was derived. By application of the model to grain growth in Ni-Fe-Pb, Fe-Cr-Zr and Fe-Ni-Zr alloys, it was predicted that driving grain boundary energy to zero is possible in alloys due to the co-segregation induced by the interactive effect between the solutes Fe/Pb, Zr/Ni and Zr/Cr. A non-linear relationship rather than a simple linear relation between 1/D* (D* the metastable equilibrium grain size) and ln(T) was predicted due to the interactive effect.

  7. The thermodynamic stability induced by solute co-segregation in nanocrystalline ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Tao; Chen, Zheng; Zhang, Jinyong; Zhang, Ping [China Univ. of Mining and Technology, Xuzhou (China). School of Mateial Science and Engineering; Yang, Xiaoqin [China Univ. of Mining and Technology, Xuzhou (China). School of Chemical Engineering and Technology

    2017-06-15

    The grain growth and thermodynamic stability induced by solute co-segregation in ternary alloys are presented. Grain growth behavior of the single-phase supersaturated grains prepared in Ni-Fe-Pb alloy melt at different undercoolings was investigated by performing isothermal annealings at T = 400 C-800 C. Combining the multicomponent Gibbs adsorption equation and Guttmann's grain boundary segregation model, an empirical relation for isothermal grain growth was derived. By application of the model to grain growth in Ni-Fe-Pb, Fe-Cr-Zr and Fe-Ni-Zr alloys, it was predicted that driving grain boundary energy to zero is possible in alloys due to the co-segregation induced by the interactive effect between the solutes Fe/Pb, Zr/Ni and Zr/Cr. A non-linear relationship rather than a simple linear relation between 1/D* (D* the metastable equilibrium grain size) and ln(T) was predicted due to the interactive effect.

  8. Microstructural characterization and phase transformation of ternary alloys near at Al3Ti compound

    International Nuclear Information System (INIS)

    Angeles Ch, C.

    1999-01-01

    This research work is related with the structural characteristic and compositional values of the crystalline phases, which are found in ternary alloys of Ti-Al-Fe and TI-Al-Cu. These types of alloys were obtained using a rapid solidification technique (10 3 -10 4 K/s) and pure elements such as Al, Ti, Fe and Cu (99.99%). These cooling velocities allow the formation of stable phases and small grain sizes (approximately in range of a few micras). The obtained results indicate the presence of Al 3 Ti and others phases of L1 2 type. These phases are commonly found in a matrix rich in A1. The microalloyed elements (Cu and Fe) substitute the aluminum in both kinds of phases. Alloys with low content of Cu show transition states from the tetragonal structure DO 22 to the cubic phases L1 2 . The structural characteristics of the alloys are related with some microhardness measurement. The results show that the presence of the L1 2 phase tends to increase to hardness depending of the content of this phase

  9. Investigations of binary and ternary phase change alloys for future memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Rausch, Pascal

    2012-09-13

    The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In{sub 3}Sb{sub 1}Te{sub 2} and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In{sub 3}Sb{sub 1}Te{sub 2}. At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe{sub 2}. For the first time a complete description of In{sub 3}Sb{sub 1}Te{sub 2} alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge{sub 2}Sb{sub 2}Te{sub 5}/GeTe or prototype systems like AgInTe{sub 2} and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge{sub 3}Sn{sub 1}Te{sub 4} to Ge{sub 2}Sn{sub 2}Te{sub 4}. These alloys are investigated with respect to constraint theory.

  10. Composition Optimization of Lithium-Based Ternary Alloy Blankets for Fusion Reactors

    Science.gov (United States)

    Jolodosky, Alejandra

    The goal of this dissertation is to examine the neutronic properties of a novel type of fusion reactor blanket material in the form of lithium-based ternary alloys. Pure liquid lithium, first proposed as a blanket for fusion reactors, is utilized as both a tritium breeder and a coolant. It has many attractive features such as high heat transfer and low corrosion properties, but most importantly, it has a very high tritium solubility and results in very low levels of tritium permeation throughout the facility infrastructure. However, lithium metal vigorously reacts with air and water and presents plant safety concerns including degradation of the concrete containment structure. The work of this thesis began as a collaboration with Lawrence Livermore National Laboratory in an effort to develop a lithium-based ternary alloy that can maintain the beneficial properties of lithium while reducing the reactivity concerns. The first studies down-selected alloys based on the analysis and performance of both neutronic and activation characteristics. First, 3-D Monte Carlo calculations were performed to evaluate two main neutronics performance parameters for the blanket: tritium breeding ratio (TBR), and energy multiplication factor (EMF). Alloys with adequate results based on TBR and EMF calculations were considered for activation analysis. Activation simulations were executed with 50 years of irradiation and 300 years of cooling. It was discovered that bismuth is a poor choice due to achieving the highest decay heat, contact dose rates, and accident doses. In addition, it does not meet the waste disposal ratings (WDR). The straightforward approach to obtain Monte Carlo TBR and EMF results required 231 simulations per alloy and became computationally expensive, time consuming, and inefficient. Consequently, alternate methods were pursued. A collision history-based methodology recently developed for the Monte Carlo code Serpent, calculates perturbation effects on practically

  11. L1{sub 0} phase formation in ternary FePdNi alloys

    Energy Technology Data Exchange (ETDEWEB)

    Montes-Arango, A.M. [Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115 (United States); Bordeaux, N.C. [Department of Chemical Engineering, Northeastern University, Boston, MA 02115 (United States); Liu, J.; Barmak, K. [Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027 (United States); Lewis, L.H., E-mail: lhlewis@neu.edu [Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115 (United States); Department of Chemical Engineering, Northeastern University, Boston, MA 02115 (United States)

    2015-11-05

    Metallurgical routes to highly metastable phases are required to access new materials with new functionalities. To this end, the stability of the tetragonal chemically ordered L1{sub 0} phase in the ternary Fe–Pd–Ni system is quantified to provide enabling information concerning synthesis of L1{sub 0}-type FeNi, a highly attractive yet highly elusive advanced permanent magnet candidate. Fe{sub 50}Pd{sub 50−x}Ni{sub x} (x = 0–7 at%) samples were arc-melted and annealed at 773 K (500 °C) for 100 h to induce formation of the chemically ordered L1{sub 0} phase. Coupled calorimetry, structural and magnetic investigations allow determination of an isothermal section of the ternary Fe–Pd–Ni phase diagram featuring a single phase L1{sub 0} region near the FePd boundary for x < 6 at%. It is demonstrated that increased Ni content in Fe{sub 50}Pd{sub 50−x}Ni{sub x} alloys systematically decreases the order-disorder transition temperature, resulting in a lower thermodynamic driving force for the ordering phase transformation. The Fe{sub 50}Pd{sub 50−x}Ni{sub x} L1{sub 0} → fcc disordering transformation is determined to occur via a two-step process, with compositionally-dependent enthalpies and transition temperatures. These results highlight the need to investigate ternary alloys with higher Ni content to determine the stability range of the L1{sub 0} phase near the FeNi boundary, thereby facilitating kinetic access to the important L1{sub 0} FeNi ferromagnetic phase. - Highlights: • Chemical ordering in FePdNi enhances intrinsic and extrinsic magnetic properties. • 773 K annealed FePdNi alloys studied show a stable L1{sub 0} phase for Ni ≤ 5.2 at%. • Chemical disordering in FePdNi occurs by a previously unreported two-step process. • Ni additions to FePd dramatically decrease the chemical order-disorder temperature. • The chemical-ordering transformation kinetics are greatly affected by Ni content.

  12. Sn-Sb-Se based binary and ternary alloys for phase change memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Kyung-Min

    2008-10-28

    In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)

  13. Cooling thermal parameters and microstructure features of directionally solidified ternary Sn–Bi–(Cu,Ag) solder alloys

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Bismarck L., E-mail: bismarck_luiz@yahoo.com.br [Department of Materials Engineering, Federal University of São Carlos, UFSCar, 13565-905 São Carlos, SP (Brazil); Garcia, Amauri [Department of Manufacturing and Materials Engineering, University of Campinas, UNICAMP, 13083-860 Campinas, SP (Brazil); Spinelli, José E. [Department of Materials Engineering, Federal University of São Carlos, UFSCar, 13565-905 São Carlos, SP (Brazil)

    2016-04-15

    Low temperature soldering technology encompasses Sn–Bi based alloys as reference materials for joints since such alloys may be molten at temperatures less than 180 °C. Despite the relatively high strength of these alloys, segregation problems and low ductility are recognized as potential disadvantages. Thus, for low-temperature applications, Bi–Sn eutectic or near-eutectic compositions with or without additions of alloying elements are considered interesting possibilities. In this context, additions of third elements such as Cu and Ag may be an alternative in order to reach sounder solder joints. The length scale of the phases and their proportions are known to be the most important factors affecting the final wear, mechanical and corrosions properties of ternary Sn–Bi–(Cu,Ag) alloys. In spite of this promising outlook, studies emphasizing interrelations of microstructure features and solidification thermal parameters regarding these multicomponent alloys are rare in the literature. In the present investigation Sn–Bi–(Cu,Ag) alloys were directionally solidified (DS) under transient heat flow conditions. A complete characterization is performed including experimental cooling thermal parameters, segregation (XRF), optical and scanning electron microscopies, X-ray diffraction (XRD) and length scale of the microstructural phases. Experimental growth laws relating dendritic spacings to solidification thermal parameters have been proposed with emphasis on the effects of Ag and Cu. The theoretical predictions of the Rappaz-Boettinger model are shown to be slightly above the experimental scatter of secondary dendritic arm spacings for both ternary Sn–Bi–Cu and Sn–Bi–Ag alloys examined. - Highlights: • Dendritic growth prevailed for the ternary Sn–Bi–Cu and Sn–Bi–Ag solder alloys. • Bi precipitates within Sn-rich dendrites were shown to be unevenly distributed. • Morphology and preferential region for the Ag{sub 3}Sn growth depend on Ag

  14. The ternary alloy with a structure of Prussian blue analogs in a transverse field

    International Nuclear Information System (INIS)

    Dely, J.; Bobak, A.

    2007-01-01

    The effects of applied transverse field on transition and compensation temperatures of the AB p C 1-p ternary alloy consisting of spins S A =3/2 , S B =2, and S C =5/2 are investigated by the use of a mean-field theory. The structure and the spin values of the model correspond to the Prussian blue analog of the type (Fe p II Mn 1-p II ) 1.5 [Cr III (CN) 6 ].nH 2 O. We find that two or even three compensation points may be induced by a transverse field for the system with appropriate values of the parameters in the model Hamiltonian. In particular, the influence of a transverse field on the compensation point in the ground state is examined

  15. Ternary Bi-Cu-Ni alloys – thermodynamics, characterization, mechanical and electrical properties

    Directory of Open Access Journals (Sweden)

    Branislav Radomir Marković

    2017-09-01

    Full Text Available The Bi–Cu–Ni ternary system belongs to the group of potential Cu-Ni-based advanced lead-free solder materials for high temperature application. The paper shows results of the thermodynamic calculations using general solution model along the line with the molar ratio of Cu: Ni = 1:1. The experimental part shows thermal, structural, electrical and mechanical properties based on differential scanning calorimetry (DSC, scanning electron microscopy with energy dispersive spectrometry (SEM-EDS, electroconductivity and hardness measurements of the alloys selected in the section from bismuth corner with molar ratio Cu: Ni = 1:1, Cu: Ni = 3:1, and Cu: Ni = 1:3.

  16. The single-ion anisotropy effects in the mixed-spin ternary-alloy

    Science.gov (United States)

    Albayrak, Erhan

    2018-04-01

    The effect of single-ion anisotropy on the thermal properties of the ternary-alloy in the form of ABpC1-p is investigated on the Bethe lattice (BL) in terms of exact recursion relations. The simulation on the BL consists of placing A atoms (spin-1/2) on the odd shells and randomly placing B (spin-3/2) or C (spin-5/2) atoms with concentrations p and 1 - p, respectively, on the even shells. The phase diagrams are calculated in possible planes spanned by the system parameters: temperature, single-ion anisotropy, concentration and ratio of the bilinear interaction parameters for z = 3 corresponding to the honeycomb lattice. It is found that the crystal field drives the system to the lowest possible state therefore reducing the temperatures of the critical lines in agreement with the literature.

  17. A comparative study of critical phenomena and magnetocaloric properties of ferromagnetic ternary alloys

    Science.gov (United States)

    Yüksel, Yusuf; Akinci, Ümit

    2018-01-01

    Magnetic and magnetocaloric properties, as well as the phase diagrams of a ferromagnetic ternary alloy system have been studied. A detailed comparison of two different methods, namely the effective field theory (EFT), and Monte Carlo (MC) simulations has been provided. Our numerical data show that the general qualitative picture presented by two methods are in a good agreement with each other. In terms of the magnetocaloric properties, our results yield that it is possible to design magnetic materials with a variety of working temperatures and magnetocaloric properties (such as large ΔSM and q values) by manipulating the magnetic phase transition via tuning the compositional factor (i.e. the mixing ratio of sublattice ions). The observed magnetocaloric effect has been found to be a direct one with ΔSM < 0 associated with a second order phase transition.

  18. Molecular dynamics study of the ternary Cu50Ti25Zr25 bulk glass forming alloy

    Directory of Open Access Journals (Sweden)

    Celtek M.

    2011-05-01

    Full Text Available The structure and thermodynamic properties of a ternary Cu50Ti25Zr25 metallic glass forming alloy in solid-liquid to glass phases were studied using molecular dynamics (MD method based on tight-binding (TB potentials. An atomic description of the melting, glass formation and crystallization process has been analyzed using different heating and cooling rates. The computed Glass Forming Ability (GFA parameters are in good agreement with experimental data. The structure analysis of the Cu50Ti25Zr25 based on molecular dynamics simulation will be also presented and compared with available MD results. We have also discussed the crystallization transition with two different interatomic potentials used in this work

  19. Equiaxed and columnar dendrite growth simulation in Al-7Si- Mg ternary alloys using cellular automaton method

    International Nuclear Information System (INIS)

    Chen, Rui; Xu, Qingyan; Liu, Baicheng

    2015-01-01

    In this paper, a modified cellular automaton (MCA) model allowing for the prediction of dendrite growth of Al-Si-Mg ternary alloys in two and three dimensions is presented. The growth kinetic of S/L interface is calculated based on the solute equilibrium approach. In order to describe the dendrite growth with arbitrarily crystallographic orientations, this model introduces a modified decentered octahedron algorithm for neighborhood tracking to eliminate the effect of mesh dependency on dendrite growth. The thermody namic and kinetic data needed for dendrite growth is obtained through coupling with Pandat software package in combination with thermodynamic/kinetic/equilibrium phase diagram calculation databases. The effect of interactions between various alloying elements on solute diffusion coefficient is considered in the model. This model has first been used to simulate Al-7Si (weight percent) binary dendrite growth followed by a validation using theoretical predictions. For ternary alloy, Al-7Si-0.5Mg dendrite simulation has been carried out and the effects of solute interactions on diffusion matrix as well as the differences of Si and Mg in solute distribution have been analyzed. For actual application, this model has been applied to simulate the equiaxed dendrite growth with various crystallographic orientations of Al-7Si-0.36Mg ternary alloy, and the predicted secondary dendrite arm spacing (SDAS) shows a reasonable agreement with the experimental ones. Furthermore, the columnar dendrite growth in directional solidification has also been simulated and the predicted primary dendrite arm spacing (PDAS) is in good agreement with experiments. The simulated results effectively demonstrate the abilities of the model in prediction of dendritic microstructure of Al-Si-Mg ternary alloy. (paper)

  20. Equiaxed and columnar dendrite growth simulation in Al-7Si- Mg ternary alloys using cellular automaton method

    Science.gov (United States)

    Chen, Rui; Xu, Qingyan; Liu, Baicheng

    2015-06-01

    In this paper, a modified cellular automaton (MCA) model allowing for the prediction of dendrite growth of Al-Si-Mg ternary alloys in two and three dimensions is presented. The growth kinetic of S/L interface is calculated based on the solute equilibrium approach. In order to describe the dendrite growth with arbitrarily crystallographic orientations, this model introduces a modified decentered octahedron algorithm for neighborhood tracking to eliminate the effect of mesh dependency on dendrite growth. The thermody namic and kinetic data needed for dendrite growth is obtained through coupling with Pandat software package in combination with thermodynamic/kinetic/equilibrium phase diagram calculation databases. The effect of interactions between various alloying elements on solute diffusion coefficient is considered in the model. This model has first been used to simulate Al-7Si (weight percent) binary dendrite growth followed by a validation using theoretical predictions. For ternary alloy, Al-7Si-0.5Mg dendrite simulation has been carried out and the effects of solute interactions on diffusion matrix as well as the differences of Si and Mg in solute distribution have been analyzed. For actual application, this model has been applied to simulate the equiaxed dendrite growth with various crystallographic orientations of Al-7Si-0.36Mg ternary alloy, and the predicted secondary dendrite arm spacing (SDAS) shows a reasonable agreement with the experimental ones. Furthermore, the columnar dendrite growth in directional solidification has also been simulated and the predicted primary dendrite arm spacing (PDAS) is in good agreement with experiments. The simulated results effectively demonstrate the abilities of the model in prediction of dendritic microstructure of Al-Si-Mg ternary alloy.

  1. Structural, mechanical and electrical properties of alloys in ternary Ag-Bi-Zn system

    Directory of Open Access Journals (Sweden)

    Minic, Duško M.

    2015-06-01

    Full Text Available Structural, mechanical and electrical properties of selected alloys in ternary Ag-Bi-Zn system are presented in this paper. Chosen alloys were investigated using X-Ray Diffraction (XRD, light optical microscopy, Scanning Electron Microscopy combined with Energy Dispersive Spectrometry (SEM-EDS, as well as by electrical conductivity and Brinell hardness measurements. Isolines of electrical conductivity and hardness for the entire Ag-Bi-Zn system were calculated using regression models.Este trabajo estudia las propiedades estructurales, mecánicas y eléctricas de aleaciones seleccionadas del sistema ternario Ag-Bi-Zn. Las aleaciones elegidas se han caracterizado por medio de difracción de rayos X, microscopía óptica, microscopía electrónica de barrido combinada con espectrometría de dispersión de energía, así como por medio de medidas de conductividad eléctrica y dureza Brinell. Por medio de modelos de regresión se han calculado las líneas de isoconductividad eléctrica y dureza para todo el sistema Ag-Bi-Zn.

  2. Multifunctional properties related to magnetostructural transitions in ternary and quaternary Heusler alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dubenko, Igor, E-mail: igor_doubenko@yahoo.com [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Quetz, Abdiel; Pandey, Sudip; Aryal, Anil; Eubank, Michael [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States); Rodionov, Igor; Prudnikov, Valerii; Granovsky, Alexander [Faculty of Physics, Moscow State University, Vorob' evy Gory, 11999I Moscow (Russian Federation); Lahderanta, Erkki [Lappeenranta University of Technology, 53851 (Finland); Samanta, Tapas; Saleheen, Ahmad; Stadler, Shane [Department of Physics & Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Ali, Naushad [Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States)

    2015-06-01

    In this report, the results of a study on the effects of compositional variations induced by the small changes in concentrations of the parent components and/or by the substitution of Ni, Mn, or In by an extra element Z, on the phase transitions, and phenomena related to the magnetostructural transitions in off-stoichiometric Ni–Mn–In based Heusler alloys are summarized. The crystal structures, phase transitions temperatures, and magnetic and magnetocaloric properties were analyzed for representative samples of the following systems (all near 15 at% indium concentration): Ni–Mn–In, Ni–Mn–In–Si, Ni–Mn–In–B, Ni–Mn–In–Cu, Ni–Mn–In–Cu–B, Ni–Mn–In–Fe, Ni–Mn–In–Ag, and Ni–Mn–In–Al. - Highlights: • The experimental results on phase transitions temperatures, adiabatic temperature changes, magnetoresistance and heat flow for the ternary and quaternary Heusler alloys based on Ni{sub 50}Mn{sub 35}In{sub 15} demonstrate high sensitivity of magnetic properties to the small changes in concentrations of the parent components and/or by the substitution of Ni, Mn, or In by an additional element Z. • The phenomena related to the magnetostructural transitions strongly depend on the weighted average radius of constituent ions.

  3. Determination of thermodynamic properties of aluminum based binary and ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Altıntas, Yemliha [Abdullah Gül University, Faculty of Engineering, Department of Materials Science and Nanotechnology, 38039, Kayseri (Turkey); Aksöz, Sezen [Nevşehir Hacı Bektaş Veli University, Faculty of Arts and Science, Department of Physics, 50300, Nevşehir (Turkey); Keşlioğlu, Kâzım, E-mail: kesli@erciyes.edu.tr [Erciyes University, Faculty of Science, Department of Physics, 38039, Kayseri (Turkey); Maraşlı, Necmettin [Yıldız Technical University, Faculty of Chemical and Metallurgical Engineering, Department of Metallurgical and Materials Engineering, 34210, Davutpaşa, İstanbul (Turkey)

    2015-11-15

    In the present work, the Gibbs–Thomson coefficient, solid–liquid and solid–solid interfacial energies and grain boundary energy of a solid Al solution in the Al–Cu–Si eutectic system were determined from the observed grain boundary groove shapes by measuring the thermal conductivity of the solid and liquid phases and temperature gradient. Some thermodynamic properties such as the enthalpy of fusion, entropy of fusion, the change of specific heat from liquid to solid and the electrical conductivity of solid phases at their melting temperature were also evaluated by using the measured values of relevant data for Al–Cu, Al–Si, Al–Mg, Al–Ni, Al–Ti, Al–Cu–Ag, Al–Cu–Si binary and ternary alloys. - Highlights: • The microstructure of the Al–Cu–Si eutectic alloy was observed through SEM. • The three eutectic phases (α-Al, Si, CuAl{sub 2}) have been determined by EDX analysis. • Solid–liquid and solid–solid interfacial energies of α-Al solution were determined. • ΔS{sub f},ΔH{sub M}, ΔC{sub P}, electrical conductivity of solid phases for solid Al solutions were determined. • G–T coefficient and grain boundary energy of solid Al solution were determined.

  4. Phase transformation and microstructure study of the as-cast Cu-rich Cu-Al-Mn ternary alloys

    Directory of Open Access Journals (Sweden)

    Holjevac-Grgurić T.

    2017-01-01

    Full Text Available Four Cu-rich alloys from the ternary Cu-Al-Mn system were prepared in the electric-arc furnace and casted in cylindrical moulds with dimensions: f=8 mm and length 12 mm. Microstructural investigations of the prepared samples were performed by using optical microscopy (OM and scanning electron microscopy, equipped by energy dispersive spectroscopy (SEM-EDS. Assignation of crystalline phases was confirmed by XRD analysis. Phase transition temperatures were determined using simultaneous thermal analyzer STA DSC/TG. Phase equilibria calculation of the ternary Cu-Al-Mn system was performed using optimized thermodynamic parameters from literature. Microstructure and phase transitions of the prepared as-cast alloys were investigated and experimental results were compared with the results of thermodynamic calculations.

  5. The constitution of alloys in the Al-rich corner of the Al-Si-Sm ternary system

    International Nuclear Information System (INIS)

    Markoli, B.; Spaic, S.; Zupanic, F.

    2001-01-01

    The constitution of alloys and the liquidus surface in the Al-rich corner of the Al-Si-Sm ternary system were determined by the examination of controlled heated and cooled specimens, as well as heat-treated specimens by means of optical and scanning electron microscopy, energy-dispersive X-ray spectroscopy, differential thermal analysis and X-ray diffraction. The Al-rich corner of the Al-Si-Sm ternary system comprises five regions of primary crystallisation (α Al , β Si , Al 3 Sm, Al 2 Si 2 Sm and AlSiSm) with following characteristic invariant reaction sequences: ternary eutectic reaction L → α Al + β Si + Al 2 Si 2 Sm, and two liquidus transition reactions, i. e., L + Al 3 Sm → α Al + AlSiSm, and L + AlSiSm → α Al + Al 2 Si 2 Sm. Along with the position of ternary eutectic and both interstitial points in the Al-rich corner of the Al-Si-Sm ternary system, the temperatures for each reaction were determined. (orig.)

  6. Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Boettcher, Shannon [Univ. of Oregon, Eugene, OR (United States); Greenaway, Ann [Univ. of Oregon, Eugene, OR (United States); Boucher, Jason [Univ. of Oregon, Eugene, OR (United States); Aloni, Shaul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2016-02-10

    ternary GaAsxP1-x and In0.5Ga0.5P alloys, with composition set by the ratio of GaAs/GaP or InP/GaP mixed as the source powder. GaAs0.3P0.7 has the appropriate bandgap to serve as a top cell on Si and In0.5Ga0.5P is near the composition used as a surface passivation layer on GaAs pn junction photovoltaics. In the final task we demonstrated III-V selective area epitaxy using CSVT as a first step toward the growth of III-V micro- or nanostructures for an integrated tandem solar cell on Si. We also found that direct epitaxial growth on Si appears to be impossible in the current H2O-CSVT reactor design, likely due to the formation of SiOx. This work sets the stage for targeted development of an improved CSVT process and for the scale up of the proof-of-concept work from a research to manufacturing-relevant platform. Replacing H2O as a transport agent with HCl would provide the ability to deposit directly on Si by avoiding oxide formation and to allow for the deposition of Al-containing alloys that would otherwise oxidize. Improved engineering design and implementation of an in-line multi-station CSVT would allow for direct deposition of device structures in a single system.

  7. III-V semiconductor materials and devices

    CERN Document Server

    Malik, R J

    1989-01-01

    The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

  8. Contribution to the Study of the Relation between Microstructure and Electrochemical Behavior of Iron-Based FeCoC Ternary Alloys

    Directory of Open Access Journals (Sweden)

    Farida Benhalla-Haddad

    2012-01-01

    Full Text Available This work deals with the relation between microstructure and electrochemical behavior of four iron-based FeCoC ternary alloys. First, the arc-melted studied alloys were characterized using differential thermal analyses and scanning electron microscopy. The established solidification sequences of these alloys show the presence of two primary crystallization phases (δ(Fe and graphite as well as two univariante lines : peritectic L+(Fe↔(Fe and eutectic L↔(Fe+Cgraphite. The ternary alloys were thereafter studied in nondeaerated solution of 10−3 M NaHCO3 + 10−3 M Na2SO4, at 25°C, by means of the potentiodynamic technique. The results indicate that the corrosion resistance of the FeCoC alloys depends on the carbon amount and the morphology of the phases present in the studied alloys.

  9. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  10. Fullerene alloy formation and the benefits for efficient printing of ternary blend organic solar cells

    DEFF Research Database (Denmark)

    Angmo, Dechan; Bjerring, Morten; Nielsen, Niels Chr.

    2015-01-01

    with a third polymer component, the system exhibits pseudo-binary phase behaviour instead of the expected ternary phase behaviour. Our results experimentally confirm the earlier hypothesis that the unexpected composition average dependent IV-behaviour for these supposed ternary mixtures are indeed due to them...

  11. One-step synthesis of PtPdAu ternary alloy nanoparticles on graphene with superior methanol electrooxidation activity

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Yuzhen; Gu Yonge; Lin Shaoxiong; Wei Jinping; Wang Zaihua [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Wang Chunming, E-mail: wangcm@lzu.edu.cn [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China); Du Yongling; Ye Weichun [Department of Chemistry, Lanzhou University, Lanzhou 730000 (China)

    2011-10-01

    Highlights: > PtPdAu nanoparticles were synthesized on graphene sheets via chemical reduction method. > The prepared PtPdAu nanoparticles were ternary alloy with fcc structure. > The catalyst exhibited superior catalytic activity and stability for MOR in alkaline. - Abstract: Well-dispersed PtPdAu ternary alloy nanoparticles were synthesized on graphene sheets via a simple one-step chemical reduction method in ethylene glycol (EG) and water system, in which EG served as both reductive and dispersing agent. The electrocatalytic activity of PtPdAu/G was tested by methanol oxidation reaction (MOR). The catalyst was further characterized by transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), which indicated that the as-synthesized PtPdAu nanoparticles with alloy structures were successfully dispersed on the graphene sheets. Electrocatalytic properties of the catalyst for MOR in alkaline have been investigated by cyclic voltammetry (CV), chronoamperometry and Tafel curves. The electrocatalytic activity and stability of PtPdAu/G were superior to PtPd/G, PtAu/G and Pt/G. In addition, the anodic peak current on PtPdAu/G catalyst was proportional to the concentration of methanol in the range of 0.05-1.00 M. This study implies that the prepared catalyst have great potential applications in fuel cells.

  12. Compositional trends and magnetic excitations in binary and ternary Fe–Pd–X magnetic shape memory alloys

    International Nuclear Information System (INIS)

    Gruner, Markus Ernst; Hamann, Sven; Brunken, Hayo; Ludwig, Alfred; Entel, Peter

    2013-01-01

    Highlights: ► We discuss compositional trends in Fe–Pd–Cu and Fe–Pd–Mn magnetic shape memory alloys. ► We combine density functional theory and combinatorial thin film experiments. ► Magnetic excitations contribute decisively to the structural transformation behavior. -- Abstract: High throughput thin film experiments and first-principles calculations are combined in order to get insight into the relation between finite temperature transformation behavior and structural ground state properties of ternary Fe–Pd–X alloys. In particular, we consider the binding surface, i.e., the energy of the disordered alloy calculated along the Bain path between bcc and fcc which we model by a 108 atom supercell. We compare stoichiometric Fe 75 Pd 25 with ternary systems, where 4.6% of the Fe atoms were substituted by Cu and Mn, respectively. The computational trends are related to combinatorial experiments on thin film libraries for the systems Fe–Pd–Mn and Fe–Pd–Cu which reveal a systematic evolution of the martensitic start temperature with composition within the relevant concentration range for magnetic shape memory (MSM) applications. Our calculations include atomic relaxations, which were shown to be relevant for a correct description of the structural properties. Furthermore, we find that magnetic excitations can substantially alter the binding surface. The comparison of experimental and theoretical trends indicates that, both, compositional changes and magnetic excitations contribute significantly to the structural stability which may thus be tailored by specifically adding antiferromagnetic components

  13. Neutronics Evaluation of Lithium-Based Ternary Alloys in IFE Blankets

    Energy Technology Data Exchange (ETDEWEB)

    Jolodosky, A. [Univ. of California, Berkeley, CA (United States); Fratoni, M. [Univ. of California, Berkeley, CA (United States)

    2015-09-22

    , low electrical conductivity and therefore low MHD pressure drop, low chemical reactivity, and extremely low tritium inventory; the addition of sodium (FLiNaBe) has been considered because it retains the properties of FliBe but also lowers the melting point. Although many of these blanket concepts are promising, challenges still remain. The limited amount of beryllium available poses a problem for ceramic breeders such as the HCPB. FLiBe and FLiNaBe are highly viscous and have a low thermal conductivity. Lithium lead possesses a poor thermal conductivity which can cause problems in both DCLL and LiPb blankets. Additionally, the tritium permeation from these two blankets into plant components can be a problem and must be reduced. Consequently, Lawrence Livermore National Laboratory (LLNL) is attempting to develop a lithium-based alloy—most likely a ternary alloy—which maintains the beneficial properties of lithium (e.g. high tritium breeding and solubility) while reducing overall flammability concerns for use in the blanket of an inertial fusion energy (IFE) power plant. The LLNL concept employs inertial confinement fusion (ICF) through the use of lasers aimed at an indirect-driven target composed of deuterium-tritium fuel. The fusion driver/target design implements the same physics currently experimented at the National Ignition Facility (NIF). The plant uses lithium in both the primary coolant and blanket; therefore, lithium-related hazards are of primary concern. Although reducing chemical reactivity is the primary motivation for the development of new lithium alloys, the successful candidates will have to guarantee acceptable performance in all their functions. The scope of this study is to evaluate the neutronics performance of a large number of lithium-based alloys in the blanket of the IFE engine and assess their properties upon activation. This manuscript is organized as follows: Section 12 presents the models and methodologies used for the analysis; Section

  14. Energy gaps, effective masses and ionicity of AlxGa1-xSb ternary semiconductor alloys

    Science.gov (United States)

    Bouarissa, N.; Boucenna, M.; Saib, S.; Siddiqui, S. A.

    2017-12-01

    A pseudopotential calculation of the electronic structure of AlxGa1-xSb ternary alloys in the zinc-blende structure has been performed. The compositional dependence of energy gaps, electron and heavy hole effective masses and ionicity of the material system of interest have been examined and discussed. Special attention has been given to the effect of the alloy disorder on the direct (Γ-Γ) bandgap energy. It is found that all features of interest vary monotonically with increasing the Al concentration x. Besides, bandgap bowing parameters and extent of the direct-to-indirect bandgap transition have been determined. Our findings agree generally well with the data reported in the literature. Trends in ionicity are found to be consistent with the Phillips ionicity scale.

  15. Phase-field modeling of the microstructure evolution and heterogeneous nucleation in solidifying ternary Al–Cu–Ni alloys

    International Nuclear Information System (INIS)

    Kundin, Julia; Pogorelov, Evgeny; Emmerich, Heike

    2015-01-01

    We have investigated the microstructure evolution during the isothermal and non-isothermal solidification of ternary Al–Cu–Ni alloys by means of a general multi-phase-field model for an arbitrary number of phases. The stability requirements for the model functions on every dual interface guarantee the absence of “ghost” phases. The aim was to generate a realistic microstructure by coupling the thermodynamic parameters of the phases and the thermodynamically consistent phase-field evolution equations. It is shown that the specially constructed thermal noise terms disturb the stability on the dual interfaces and can produce heterogeneous nucleation of product phases at energetically favorable points. Similar behavior can be observed in triple junctions where the heterogeneous nucleation of a fourth phase is more favorable. Finally, the model predicts the growth of a combined eutectic-like and peritectic-like structure that is comparable to the observed experimental microstructure in various alloys

  16. Theoretical investigation of the structural stabilities, optoelectronic properties and thermodynamic characteristics of GaPxSb1-x ternary alloys

    Science.gov (United States)

    Oumelaz, F.; Nemiri, O.; Boumaza, A.; Ghemid, S.; Meradji, H.; Bin Omran, S.; El Haj Hassan, F.; Rai, D. P.; Khenata, R.

    2017-12-01

    In this theoretical study, we have investigated the structural, phase transition, electronic, thermodynamic and optical properties of GaPxSb1-x ternary alloys. Our calculations are performed with the WIEN2k code based on density functional theory using the full-potential linearized augmented plane wave method. For the electron exchange-correlation potential, a generalized gradient approximation within Wu-Cohen scheme is considered. The recently developed Tran-Blaha modified Becke-Johnson potential has also been used to improve the underestimated band gap. The structural properties, including the lattice constants, the bulk moduli and their pressure derivatives are in very good agreement with the available experimental data and theoretical results. Several structural phase transitions were studied here to establish the stable structure and to predict the phase transition under hydrostatic pressure. The computed transition pressure (Pt) of the material of our interest from the zinc blende (B3) to the rock salt (B1) phase has been determined and found to agree well with the experimental and theoretical data. The calculated band structure shows that GaSb binary compound and the ternary alloys are direct band gap semiconductors. Optical parameters such as the dielectric constants and the refractive indices are calculated and analyzed. The thermodynamic results are also interpreted and analyzed.

  17. Thermodynamic mixing effects of liquid ternary Au–Fe–Pd alloys by computer-aided Knudsen cell mass spectrometry

    International Nuclear Information System (INIS)

    Tomiska, Josef

    2012-01-01

    Highlights: ► Thermodynamic mixing behavior of liquid Au–Fe–Pd alloys over the whole range of composition. ► Experimental investigations by means of the computer-aided Knudsen cell mass spectrometry. ► Algebraic representation of the molar excess properties by TAP series concept. ► The corresponding TAP parameters are presented. ► The values of all molar excess functions, and thermodynamic activities at 1850 K are given. - Abstract: Thermodynamic investigations on liquid ternary Au–Fe–Pd alloys have been performed by means of the computer-aided Knudsen cell mass spectrometry. The “Digital Intensity-Ratio” (DIR) – method has been applied for the determination of the thermodynamic mixing behaviour. The ternary thermodynamically adapted power (TAP) series concept is used for the algebraic representation of the molar excess properties. The corresponding TAP parameters, and the values of the molar excess quantities Z E (Z = Gibbs energy G, heat of mixing H, and entropy S) as well as the thermodynamic activities of all three constituents at 1850 K are presented.

  18. Growth and properties of Al-rich InxAl1-xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Oh, Tae Su; Suh, Eun-Kyung; Kim, Jong Ock; Jeong, Hyun; Lee, Yong Seok; Nagarajan, S; Lim, Kee Young; Hong, Chang-Hee

    2008-01-01

    An Al-rich In x Al 1-x N ternary alloy was grown on a GaN template by metal-organic chemical vapour deposition (MOCVD). The GaN template was fabricated on a c-plane sapphire with a low temperature GaN nucleation layer. The growth of the 300 nm thick In x Al 1-x N layer was carried out under various growth temperatures and pressures. The surface morphology and the InN molar fraction of the In x Al 1-x N layer were assessed by using atomic force microscopy (AFM) and high resolution x-ray diffraction, respectively. The AFM surface images of the In x Al 1-x N ternary alloy exhibited quantum dot-like grains caused by the 3D island growth mode. The grains, however, disappeared rapidly by increasing diffusion length and mobility of the Al adatoms with increasing growth temperature and the full width at half maximum value of ternary peaks in HR-XRD decreased with decreasing growth pressure. The MOCVD growth condition with the increased growth temperature and decreased growth pressure would be effective to grow the In x Al 1-x N ternary alloy with a smooth surface and improved quality. The optical band edge of In x Al 1-x N ternary alloys was estimated by optical absorbance and, based on the results of HR-XRD and optical absorbance measurements, we obtained the bowing parameter of the In x Al 1-x N ternary alloy at b = 5.3 eV, which was slightly larger than that of previous reports

  19. First-principles study on half-metallic ferromagnetic properties of Zn1- x V x Se ternary alloys

    Science.gov (United States)

    Khatta, Swati; Tripathi, S. K.; Prakash, Satya

    2017-09-01

    The spin-polarised density functional theory along with self-consistent plane-wave pseudopotential is used to investigate the half-metallic ferromagnetic properties of ternary alloys Zn1- x V x Se. The generalized gradient approximation is used for exchange-correlation potential. The equilibrium lattice constants, bulk modulus, and its derivatives are calculated. The calculated spin-polarised energy-band structures reveal that these alloys are half-metallic for x = 0.375 and 0.50 and nearly half-metallic for other values of x. The estimated direct and indirect bandgaps may be useful for the magneto-optical absorption experiments. It is found that there is strong Zn 4s, Se 4p, and V 3d orbital hybridization in the conduction bands of both the spins, while Se 4p and V 3d orbital hybridization predominates in the valence bands of both the spins. The s, p-d, and p-d orbital hybridization reduces the local magnetic moment of V atoms and small local magnetic moments are produced on Zn and Se atoms which get coupled with V atoms in ferromagnetic and antiferromagnetic phases, respectively. The conduction and valence-band-edge splittings and exchange constants predict the ferromagnetism in these alloys. The conduction band-impurity (s and p-d) exchange interaction is more significant for ferromagnetism in these alloys than the valence band-impurity (p-d) exchange interaction.

  20. Ternary systems

    International Nuclear Information System (INIS)

    Kagan, D.N.; Hubberstey, P.; Barker, M.G.

    1985-01-01

    The paper reviews the experimental and theoretical studies carried out on multicomponent alkali metal systems. Solid-liquid phase equilibria studies are mainly concerned with the systems Na-K-Rb and Na-K-Cs, and data on the liquidus temperatures in these systems are presented. The thermodynamic properties of the ternary Na-K-Cs eutectic system have been determined experimentally, and the enthalpy, heat capacity and excess functions of the alloy are given. An analysis of calculational methods used in determining thermodynamic functions of ternary liquid metals systems is described. Finally, data are tabulated for the density, compressibility, saturated vapour pressure, viscosity and thermal conductivity of the ternary Na-K-Cs eutectic system. (UK)

  1. Study on the Mg-Li-Zn ternary alloy system with improved mechanical properties, good degradation performance and different responses to cells

    NARCIS (Netherlands)

    Liu, Yang; Wu, Yuanhao; Bian, Dong; Gao, Shuang; Leeflang, M.A.; Guo, Hui; Zheng, Yufeng; Zhou, J.

    2017-01-01

    Novel Mg-(3.5, 6.5wt%)Li-(0.5, 2, 4wt%)Zn ternary alloys were developed as new kinds of biodegradable metallic materials with potential for stent application. Their mechanical properties, degradation behavior, cytocompatibility and hemocompatibility were studied. These potential biomaterials

  2. Influence of Surface Energy on Organic Alloy Formation in Ternary Blend Solar Cells Based on Two Donor Polymers.

    Science.gov (United States)

    Gobalasingham, Nemal S; Noh, Sangtaik; Howard, Jenna B; Thompson, Barry C

    2016-10-05

    The compositional dependence of the open-circuit voltage (V oc ) in ternary blend bulk heterojunction (BHJ) solar cells is correlated with the miscibility of polymers, which may be influenced by a number of attributes, including crystallinity, the random copolymer effect, or surface energy. Four ternary blend systems featuring poly(3-hexylthiophene-co-3-(2-ethylhexyl)thiophene) (P3HT 75 -co-EHT 25 ), poly(3-hexylthiophene-co-(hexyl-3-carboxylate)), herein referred to as poly(3-hexylthiophene-co-3-hexylesterthiophene) (P3HT 50 -co-3HET 50 ), poly(3-hexylthiophene-thiophene-diketopyrrolopyrrole) (P3HTT-DPP-10%), and an analog of P3HTT-DPP-10% with 40% of 3-hexylthiophene exchanged for 2-(2-methoxyethoxy)ethylthiophen-2-yl (3MEO-T) (featuring an electronically decoupled oligoether side-chain), referred to as P3HTTDPP-MEO40%, are explored in this work. All four polymers are semicrystalline and rich in rr-P3HT content and perform well in binary devices with PC 61 BM. Except for P3HTTDPP-MEO40%, all polymers exhibit similar surface energies (∼21-22 mN/m). P3HTTDPP-MEO40% exhibits an elevated surface energy of around 26 mN/m. As a result, despite the similar optoelectronic properties and binary solar cell performance of P3HTTDPP-MEO40% compared to P3HTT-DPP-10%, the former exhibits a pinned V oc in two different sets of ternary blend devices. This is a stark contrast to previous rr-P3HT-based systems and demonstrates that surface energy, and its influence on miscibility, plays a critical role in the formation of organic alloys and can supersede the influence of crystallinity, the random copolymer effect, similar backbone structures, and HOMO/LUMO considerations. Therefore, we confirm surface energy compatibility as a figure-of-merit for predicting the compositional dependence of the V oc in ternary blend solar cells and highlight the importance of polymer miscibility in organic alloy formation.

  3. Fe-Cr-V ternary alloy-based ferritic steels for high- and low-temperature applications

    International Nuclear Information System (INIS)

    Rieth, M.; Materna-Morris, E.; Dudarev, S.L.; Boutard, J.-L.; Keppler, H.; Mayor, J.

    2009-01-01

    The phase stability of alloys and steels developed for application in nuclear fission and fusion technology is one of the decisive factors determining the potential range of operating temperatures and radiation conditions that the core elements of a power plant can tolerate. In the case of ferritic and ferritic-martensitic steels, the choice of the chemical composition is dictated by the phase diagram for binary FeCr alloys where in the 0-9% range of Cr composition the alloy remains in the solid solution phase at and below the room temperature. For Cr concentrations exceeding 9% the steels operating at relatively low temperatures are therefore expected to exhibit the formation of α' Cr-rich precipitates. These precipitates form obstacles for the propagation of dislocations, impeding plastic deformation and embrittling the material. This sets the low temperature limit for the use of of high (14% to 20%) Cr steels, which for the 20% Cr steels is at approximately 600 deg. C. On the other hand, steels containing 12% or less Cr cannot be used at temperatures exceeding ∼600 deg. C due to the occurrence of the α-γ transition (912 deg. C in pure iron and 830 deg. C in 7% Cr alloy), which weakens the steel in the high temperature limit. In this study, we investigate the physical properties of a concentrated ternary alloy system that attracted relatively little attention so far. The phase diagram of ternary Fe-Cr-V alloy shows no phase boundaries within a certain broad range of Cr and V concentrations. This makes the alloy sufficiently resistant to corrosion and suggests that steels and dispersion strengthened materials based on this alloy composition may have better strength and stability at high temperatures. Experimental heats were produced on a laboratory scale by arc melting the material components to pellets, then by melting the pellets in an induction furnace and casting the melt into copper moulds. The compositions in weight percent (iron base) are 10Cr5V, 10Cr

  4. Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

    2015-01-13

    Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

  5. Hydrogen induced dis-proportionation studies on Zr-Co-M (M=Ni, Fe, Ti) ternary alloys

    International Nuclear Information System (INIS)

    Jat, Ram Avtar; Pati, Subhasis; Parida, S.C.; Agarwal, Renu; Mukerjee, S.K.; Sastry, P.U.; Jayakrishnan, V.B.

    2016-01-01

    The intermetallic compound ZrCo is considered as a suitable material for storage, supply and recovery of hydrogen isotopes in International Thermonuclear Experimental Reactor (ITER). However, upon repeated hydriding-dehydriding cycles, the hydrogen storage capacity of ZrCo decreases, which is attributed to the disproportionate reaction ZrCo + H 2 ↔ ZrH 2 + ZrCo 2 . The reduction of hydrogen storage capacity of ZrCo is not desirable for its use in tritium facilities. In our previous studies, attempts were made to improve the durability of ZrCo against dis-proportionation by including a third element. The present study is aimed to investigate the hydrogen induced dis-proportionation of Zr-Co-M (M=Ni, Fe and Ti) ternary alloys under hydrogen delivery conditions

  6. Density Functional Theory Modeling of Low-Loss Electron Energy-Loss Spectroscopy in Wurtzite III-Nitride Ternary Alloys.

    Science.gov (United States)

    Eljarrat, Alberto; Sastre, Xavier; Peiró, Francesca; Estradé, Sónia

    2016-06-01

    In the present work, the dielectric response of III-nitride semiconductors is studied using density functional theory (DFT) band structure calculations. The aim of this study is to improve our understanding of the features in the low-loss electron energy-loss spectra of ternary alloys, but the results are also relevant to optical and UV spectroscopy results. In addition, the dependence of the most remarkable features with composition is tested, i.e. applying Vegard's law to band gap and plasmon energy. For this purpose, three wurtzite ternary alloys, from the combination of binaries AlN, GaN, and InN, were simulated through a wide compositional range (i.e., Al x Ga1-x N, In x Al1-x N, and In x Ga1-x N, with x=[0,1]). For this DFT calculations, the standard tools found in Wien2k software were used. In order to improve the band structure description of these semiconductor compounds, the modified Becke-Johnson exchange-correlation potential was also used. Results from these calculations are presented, including band structure, density of states, and complex dielectric function for the whole compositional range. Larger, closer to experimental values, band gap energies are predicted using the novel potential, when compared with standard generalized gradient approximation. Moreover, a detailed analysis of the collective excitation features in the dielectric response reveals their compositional dependence, which sometimes departs from a linear behavior (bowing). Finally, an advantageous method for measuring the plasmon energy dependence from these calculations is explained.

  7. Effect of Ternary Addition of Iron on Shape Memory Characteristics of Cu-Al Alloys

    Science.gov (United States)

    Raju, T. N.; Sampath, V.

    2011-07-01

    The effect of alloying Cu-Al alloys with Fe on their transformation temperatures and shape memory properties was investigated by differential scanning calorimetry and bend test. It was found that the minor additions of iron resulted in change of transformation temperatures and led to excellent shape memory properties of the alloys. Since the transformation temperatures are high, they are an ideal choice for high-temperature applications.

  8. Microstructure and magnetic behavior of Cu–Co–Si ternary alloy synthesized by mechanical alloying and isothermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Chabri, Sumit, E-mail: sumitchabri2006@gmail.com [Department of Metallurgy & Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India); Bera, S. [Department of Metallurgical & Materials Engineering, National Institute of Technology, Durgapur 713209 (India); Mondal, B.N. [Department of Central Scientific Services, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India); Basumallick, A.; Chattopadhyay, P.P. [Department of Metallurgy & Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah 711103 (India)

    2017-03-15

    Microstructure and magnetic behavior of nanocrystalline 50Cu–40Co–10Si (at%) alloy prepared by mechanical alloying and subsequent isothermal annealing in the temperature range of 450–650 °C have been studied. Phase evolution during mechanical alloying and isothermal annealing is characterized by X-ray diffraction (XRD), differential thermal analyzer (DTA), high resolution transmission electron microscopy (HRTEM) and magnetic measurement. Addition of Si has been found to facilitate the metastable alloying of Co in Cu resulting into the formation of single phase solid solution having average grain size of 9 nm after ball milling for 50 h duration. Annealing of the ball milled alloy improves the magnetic properties significantly and best combination of magnetic properties has been obtained after annealing at 550 °C for 1 h duration.

  9. Designing and Validating Ternary Pd Alloys for Optimum Sulfur/Carbon Resistance in Hydrogen Separation and Carbon Capture Membrane Systems Using High-Throughput Combinatorial Methods

    Energy Technology Data Exchange (ETDEWEB)

    Lewis, Amanda [Pall Corporation, Port Washington, NY (United States); Zhao, Hongbin [Pall Corporation, Port Washington, NY (United States); Hopkins, Scott [Pall Corporation, Port Washington, NY (United States)

    2014-12-01

    This report summarizes the work completed under the U.S. Department of Energy Project Award No.: DE-FE0001181 titled “Designing and Validating Ternary Pd Alloys for Optimum Sulfur/Carbon Resistance in Hydrogen Separation and Carbon Capture Membrane Systems Using High-Throughput Combinatorial Methods.” The project started in October 1, 2009 and was finished September 30, 2014. Pall Corporation worked with Cornell University to sputter and test palladium-based ternary alloys onto silicon wafers to examine many alloys at once. With the specialized equipment at Georgia Institute of Technology that analyzed the wafers for adsorbed carbon and sulfur species six compositions were identified to have resistance to carbon and sulfur species. These compositions were deposited on Pall AccuSep® supports by Colorado School of Mines and then tested in simulated synthetic coal gas at the Pall Corporation. Two of the six alloys were chosen for further investigations based on their performance. Alloy reproducibility and long-term testing of PdAuAg and PdZrAu provided insight to the ability to manufacture these compositions for testing. PdAuAg is the most promising alloy found in this work based on the fabrication reproducibility and resistance to carbon and sulfur. Although PdZrAu had great initial resistance to carbon and sulfur species, the alloy composition has a very narrow range that hindered testing reproducibility.

  10. Electronic and phononic origins of martensitic behavior in nickel titanium-based binary and ternary shape memory alloys

    Science.gov (United States)

    Hatcher, Nicholas B.

    Due to the importance of NiTi as a shape memory material and the uncertainty regarding its atomisitic martensitic transformation path, a thorough investigation to understand the structural stability governing this displacive phase transformation is warranted. We investigate elastic and shear stabilities of NiTi binary and ternary (with additions of Pd and Pt) alloys using first-principles calculations with the highly-precise full-potential linearized augmented plane wave (FLAPW) method. Ambiguities of the B2, R, B19, B19', and proposed B33 structures are resolved, and the phase stability of each structure is established by examining calculated formation energies. All single crystal elastic constants, Young's, bulk, and shear moduli, Poisson's ratio, and the Zener anisotropy of the B2, R, B19, B19', and B33 phases are calculated and presented. To investigate the susceptibility to shearing, generalized stacking fault energetics and cleavage energies are calculated for the {001}, {011}, and {111} slip planes of the B2 phase. Burgers vectors and shear resistance are established. By investigating various deformation mechanisms related to these stacking faults, we find an instability to h100i{011} slip in the B2 phase. Using this and reviewing previously proposed atomistic transformation paths, the mechanisms governing the direct martensitic transformation of NiTi between the austenite and the martensite are identified. Barrierless transformation paths from the B2 phase to the B19' phase and from the B2 phase to the B33 phase are proposed, and the ternary transformation path is investigated. Differences between binary and ternary alloys, which are known to raise transformation temperatures, are illustrated. To provide a theoretical foundation for this diffusionless structural phase transformation, we illustrate the changes in electronic structures which explain its martensitic behavior. Electronic structure evolution is illustrated throughout the proposed atomistic

  11. Numerical Prediction of the Thermodynamic Properties of Ternary Al-Ni-Pd Alloys

    Science.gov (United States)

    Zagula-Yavorska, Maryana; Romanowska, Jolanta; Kotowski, Sławomir; Sieniawski, Jan

    2016-01-01

    Thermodynamic properties of ternary Al-Ni-Pd system, such as exGAlNPd, µAl(AlNiPd), µNi(AlNiPd) and µPd(AlNiPd) at 1,373 K, were predicted on the basis of thermodynamic properties of binary systems included in the investigated ternary system. The idea of predicting exGAlNiPd values was regarded as calculation of values of the exG function inside a certain area (a Gibbs triangle) unless all boundary conditions, that is values of exG on all legs of the triangle are known (exGAlNi, exGAlPd, exGNiPd). This approach is contrary to finding a function value outside a certain area, if the function value inside this area is known. exG and LAl,Ni,Pd ternary interaction parameters in the Muggianu extension of the Redlich-Kister formalism were calculated numerically using the Excel program and Solver. The accepted values of the third component xx differed from 0.01 to 0.1 mole fraction. Values of LAlNiPd parameters in the Redlich-Kister formula are different for different xx values, but values of thermodynamic functions: exGAlNiPd, µAl(AlNiPd), µNi(AlNiPd) and µPd(AlNiPd) do not differ significantly for different xx values. The choice of xx value does not influence the accuracy of calculations.

  12. Structural and magnetic study of mechanically deformed Fe rich FeAlSi ternary alloys

    International Nuclear Information System (INIS)

    Legarra, E.; Apiñaniz, E.; Plazaola, F.

    2012-01-01

    Highlights: ► Addition of Si to binary Fe–Al alloys makes the disordering more difficult. ► Si addition opposes the large volume increase found in FeAl alloys with deformation. ► Disordering induces a redistribution of non-ferrous atoms around Fe atoms in Fe 75 Al 25−x Si x and Fe 70 Al 30−x Si x . ► Addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe. ► Si inhibits the para-ferro transition found in Fe 60 Al 40 alloy with disordering. - Abstract: In this work we study systematically the influence of different Al/Si ratios on the magnetic and structural properties of mechanically disordered powder Fe 75 Al 25−x Si x , Fe 70 Al 30−x Si x and Fe 60 Al 40−x Si x alloys by means of Mössbauer spectroscopy, X-ray diffraction and magnetic measurements. In order to obtain different stages of disorder the alloys were deformed by different methods: crushing induction melted alloys and ball milling annealed (ordered) alloys using different number of balls and speed. X-ray and Mössbauer data show that mechanical deformation induces the disordered A2 structure in these alloys. The results indicate that addition of Si to binary Fe–Al alloys makes the disordering more difficult. In addition, X-ray diffraction patterns show that the normalized lattice parameter variation of the disordered alloys of each composition decreases monotonically with Si content, indicating clearly that Si addition opposes the large volume increase found in FeAl alloys with deformation. The study of the hyperfine fields indicates that there is a redistribution of non-ferrous atoms around Fe atoms with the disordering; indeed, there is an inversion of the behavior of the hyperfine field of the Fe atoms. On the other hand, the magnetic measurements indicate that addition of Si to binary Fe 75 Al 25 and Fe 70 Al 30 alloys opposes the magnetic behavior induced by Al in the magnetism of Fe.

  13. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    ~10x, to a range of 1×107 cm-2, compared to current state of the art. This reduction can now enable future III-V/Si solar cells based on GaAsP metamorphic buffers in which the underlying Si substrate can participate as an active sub-cell, and such buffers have been demonstrated in this research. Second, in this same lattice constant range, novel GaP/SiGe interfaces on Si were grown and demonstrated to eliminate the small, but not negligible lattice misfit between GaP and Si, and provides a second pathway for future III-V/Si solar cell integration through subsequent metamorphic buffer growth. For the GaAs-InP range of lattice constants, multiple metamorphic buffer strategies, including those based on anion-specific quaternary GaInAsP, combinations of step and linearly-graded buffers, and buffers with multiple ternary alloys were all investigated. Micro-scale phase separation within quaternary anion-graded GaInAsP was identified as a mechanism to significantly inhibit proper lattice misfit strain relaxation, which was explained by thermodynamic arguments consistent with theoretical phase separation. This led to the creation of hybrid step and linearly graded InGaAs/InGaP metamorphic buffers through which phase separation was totally eliminated by avoiding specific compositions that were identified as sources for phase separation. These findings have enabled a realistic path for accessing the full range of bandgaps needed for future high efficiency III-V solar cells through optimized metamorphic III-V grading strategies.

  14. The A1 to L10 transformation in FePt films with ternary alloying additions of Mg, V, Mn, and B

    International Nuclear Information System (INIS)

    Wang, B.; Barmak, K.; Klemmer, T. J.

    2011-01-01

    The impact of ternary additions of Mg, V, Mn, and B on the A1 [face centered cubic (fcc)] to L1 0 phase transformation has been studied. The films were cosputter deposited from elemental targets at room temperature and annealed after deposition. The films had Mg additions in the range ∼0-2.6 at.%, V additions in the range 0.7-12.2 at.%, Mn additions in the range 2.2-16.3 at.%, and B additions in the range 1.2-12.9 at.%. For all four ternary alloy systems, annealing resulted in the formation of no other phases than the L1 0 phase. Ternary additions of C than the binary FePt films with the same Pt content.

  15. Solid-state reactions during mechanical alloying of ternary Fe–Al–X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems: A review

    Energy Technology Data Exchange (ETDEWEB)

    Hadef, Fatma, E-mail: hadef77@yahoo.fr [Laboratoire de Recherche sur la Physico-Chimie des Surfaces et Interfaces, LRPCSI, Université 20 Août 1955, BP 26, Route d’El-Haddaiek, Skikda 21000 (Algeria); Département de Physique, Faculté des Sciences, Université 20 Août 1955, BP 26, Route d’El-Haddaiek, Skikda 21000 (Algeria)

    2016-12-01

    The last decade has witnessed an intensive research in the field of nanocrystalline materials due to their enhanced properties. A lot of processing techniques were developed in order to synthesis these novel materials, among them mechanical alloying or high-energy ball milling. In fact, mechanical alloying is one of the most common operations in the processing of solids. It can be used to quickly and easily synthesize a variety of technologically useful materials which are very difficult to manufacture by other techniques. One advantage of MA over many other techniques is that is a solid state technique and consequently problems associated with melting and solidification are bypassed. Special attention is being paid to the synthesis of alloys through reactions mainly occurring in solid state in many metallic ternary Fe–Al–X systems, in order to improve mainly Fe–Al structural and mechanical properties. The results show that nanocrystallization is the common result occurring in all systems during MA process. The aim of this work is to illustrate the uniqueness of MA process to induce phase transformation in metallic Fe–Al–X (X=Ni, Mn, Cu, Ti, Cr, B, Si) systems. - Highlights: • A review of state of the art on binary Fe–Al alloys was presented. • Structural and microstructural properties of MA ternary Fe–Al–X alloys were summerized. • MA process is a powerful tool for producing metallic alloys at the nanometer scale.

  16. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  17. Study on the Mg-Li-Zn ternary alloy system with improved mechanical properties, good degradation performance and different responses to cells.

    Science.gov (United States)

    Liu, Yang; Wu, Yuanhao; Bian, Dong; Gao, Shuang; Leeflang, Sander; Guo, Hui; Zheng, Yufeng; Zhou, Jie

    2017-10-15

    Novel Mg-(3.5, 6.5wt%)Li-(0.5, 2, 4wt%)Zn ternary alloys were developed as new kinds of biodegradable metallic materials with potential for stent application. Their mechanical properties, degradation behavior, cytocompatibility and hemocompatibility were studied. These potential biomaterials showed higher ultimate tensile strength than previously reported binary Mg-Li alloys and ternary Mg-Li-X (X=Al, Y, Ce, Sc, Mn and Ag) alloys. Among the alloys studied, the Mg-3.5Li-2Zn and Mg-6.5Li-2Zn alloys exhibited comparable corrosion resistance in Hank's solution to pure magnesium and better corrosion resistance in a cell culture medium than pure magnesium. Corrosion products observed on the corroded surface were composed of Mg(OH) 2 , MgCO 3 and Ca-free Mg/P inorganics and Ca/P inorganics. In vitro cytotoxicity assay revealed different behaviors of Human Umbilical Vein Endothelial Cells (HUVECs) and Human Aorta Vascular Smooth Muscle Cells (VSMCs) to material extracts. HUVECs showed increasing nitric oxide (NO) release and tolerable toxicity, whereas VSMCs exhibited limited decreasing viability with time. Platelet adhesion, hemolysis and coagulation tests of these Mg-Li-Zn alloys showed different degrees of activation behavior, in which the hemolysis of the Mg-3.5Li-2Zn alloy was lower than 5%. These results indicated the potential of the Mg-Li-Zn alloys as good candidate materials for cardiovascular stent applications. Mg-Li alloys are promising as absorbable metallic biomaterials, which however have not received significant attention since the low strength, controversial corrosion performance and the doubts in Li toxicity. The Mg-Li-Zn alloy in the present study revealed much improved mechanical properties higher than most reported binary Mg-Li and ternary Mg-Li-X alloys, with superior corrosion resistance in cell culture media. Surprisingly, the addition of Li and Zn showed increased nitric oxide release. The present study indicates good potential of Mg-Li-Zn alloy as

  18. Effects of Ni content on nanocrystalline Fe–Co–Ni ternary alloys synthesized by a chemical reduction method

    Energy Technology Data Exchange (ETDEWEB)

    Chokprasombat, Komkrich, E-mail: komkrich28@gmail.com [Department of Physics, Faculty of Science, Thaksin University, Phatthalung 93210 Thailand (Thailand); Pinitsoontorn, Supree [Integrated Nanotechnology Research Center, Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002 Thailand (Thailand); Maensiri, Santi [School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 Thailand (Thailand)

    2016-05-01

    Magnetic properties of Fe–Co–Ni ternary alloys could be altered by changing of the particle size, elemental compositions, and crystalline structures. In this work, Fe{sub 50}Co{sub 50−x}Ni{sub x} nanoparticles (x=10, 20, 40, and 50) were prepared by the novel chemical reduction process. Hydrazine monohydrate was used as a reducing agent under the concentrated basic condition with the presence of poly(vinylpyrrolidone). We found that the nanoparticles were composed of Fe, Co and Ni with compositions according to the molar ratio of the metal sources. Interestingly, the particles were well-crystalline at the as-prepared state without post-annealing at high temperature. Increasing Ni content resulted in phase transformation from body centered cubic (bcc) to face centered cubic (fcc). For the fcc phase, the average particle size decreased when increased the Ni content; the Fe{sub 50}Ni{sub 50} nanoparticles had the smallest average size with the narrowest size distribution. In additions, the particles exhibited ferromagnetic properties at room temperature with the coercivities higher than 300 Oe, and the saturation magnetiation decreased with increasing Ni content. These results suggest that the structural and magnetic properties of Fe–Co–Ni alloys could be adjusted by varying the Ni content. - Highlights: • We prepared nanocrystalline Fe–Co–Ni alloys by a novel chemical reduction process. • Elemental compositions could be well controlled by the molar ratio of metal sources. • Particle size and magnetic properties clearly depended on the Ni contents. • Fe{sub 50}Co{sub 10}Ni{sub 40} exhibited high saturation magnetization of 126.3 emu/g.

  19. Development of interatomic potential of Ge(1- x - y )Si x Sn y ternary alloy semiconductors for classical lattice dynamics simulation

    Science.gov (United States)

    Tomita, Motohiro; Ogasawara, Masataka; Terada, Takuya; Watanabe, Takanobu

    2018-04-01

    We provide the parameters of Stillinger-Weber potentials for GeSiSn ternary mixed systems. These parameters can be used in molecular dynamics (MD) simulations to reproduce phonon properties and thermal conductivities. The phonon dispersion relation is derived from the dynamical structure factor, which is calculated by the space-time Fourier transform of atomic trajectories in an MD simulation. The phonon properties and thermal conductivities of GeSiSn ternary crystals calculated using these parameters mostly reproduced both the findings of previous experiments and earlier calculations made using MD simulations. The atomic composition dependence of these properties in GeSiSn ternary crystals obtained by previous studies (both experimental and theoretical) and the calculated data were almost exactly reproduced by our proposed parameters. Moreover, the results of the MD simulation agree with the previous calculations made using a time-independent phonon Boltzmann transport equation with complicated scattering mechanisms. These scattering mechanisms are very important in complicated nanostructures, as they allow the heat-transfer properties to be more accurately calculated by MD simulations. This work enables us to predict the phonon- and heat-related properties of bulk group IV alloys, especially ternary alloys.

  20. Neutronics Evaluation of Lithium-Based Ternary Alloys in IFE Blankets

    Energy Technology Data Exchange (ETDEWEB)

    Jolodosky, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Fratoni, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-11-20

    Pre-conceptual fusion blanket designs require research and development to reflect important proposed changes in the design of essential systems, and the new challenges they impose on related fuel cycle systems. One attractive feature of using liquid lithium as the breeder and coolant is that it has very high tritium solubility and results in very low levels of tritium permeation throughout the facility infrastructure. However, lithium metal vigorously reacts with air and water and presents plant safety concerns. If the chemical reactivity of lithium could be overcome, the result would have a profound impact on fusion energy and associated safety basis. The overriding goal of this project is to develop a lithium-based alloy that maintains beneficial properties of lithium (e.g. high tritium breeding and solubility) while reducing overall flammability concerns. To minimize the number of alloy combinations that must be explored, only those alloys that meet certain nuclear performance metrics will be considered for subsequent thermodynamic study. The specific scope of this study is to evaluate the neutronics performance of lithium-based alloys in the blanket of an inertial confinement fusion (ICF) engine. The results of this study will inform the development of lithium alloys that would guarantee acceptable neutronics performance while mitigating the chemical reactivity issues of pure lithium.

  1. Microstructures of neutron-irradiated Fe-12Cr-XMn (X=15-30) ternary alloys

    International Nuclear Information System (INIS)

    Miyahara, K.; Hosoi, Y.; Garner, F.A.

    1992-01-01

    The objective of this effort is to determine the factors which control the stability of irradiated alloys proposed for reduced activation applications. The Fe-Cr-Mn alloy system is being studied as an alternative to the Fe-Cr-Ni system because of the need to reduce long-term radioactivation in fusion-power devices. In this study, four Fe-12Cr-XMn (X =15, 20, 25, 30 wt%) alloys were irradiated in the Fast Flux Test Facility to 20 dpa at 643K and 40 dpa at 679, 793, and 873K to investigate the influence of manganese content on void swelling and phase stability. The results confirm and expand the results of earlier studies that indicate that the Fe-Cr-Mn system is relatively unstable compared to that of the Fe-Cr-Ni system, with alpha and sigma phases forming as a consequence of thermal aging or high temperature irradiation

  2. Magnetic transition induced by mechanical deformation in Fe{sub 60}Al{sub 40−x}Si{sub x} ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Legarra, E., E-mail: estibaliz.legarra@ehu.es [Dpto. Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), CP. 644, 48080 Bilbao (Spain); Apiñaniz, E. [Dpto. Fisica Aplicada I, Universidad del Pais Vasco, Alameda de Urquijo s/n, 48013 Bilbao (Spain); Plazaola, F. [Dpto. Electricidad y Electronica, Universidad del Pais Vasco (UPV/EHU), CP. 644, 48080 Bilbao (Spain); Jimenez, J.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM), Avda. Gregorio del amo 8, 28040 Madrid (Spain)

    2014-02-15

    Highlights: • Fe{sub 60}Al{sub 40−x}Si{sub x} alloys were disordered by means of planetary ball milling technique. • Paramagnetic to ferromagnetic transition is observed with disordering. • Si addition hinders the disordering process and the increase of the lattice parameter. • Si addition promotes the paramagnetic to ferromagnetic transition. -- Abstract: We have used Mössbauer spectroscopy and X-ray diffraction to study the influence of different Al/Si ratios on the structural and magnetic properties of the mechanically deformed Fe{sub 60}Al{sub 40−x}Si{sub x} alloys. The results indicate that ternary alloys also present the magnetic transition with disordering observed in binary Fe{sub 60}Al{sub 40} alloys. Besides, Si introduction has two opposite contributions. From a structural point of view, hinders the disordering process, but, from a magnetic point of view promotes the magnetic transition.

  3. Oxidation of high-chromium binary Ni--Cr alloys and ternary alloys containing Ce, Zr, and Ti

    International Nuclear Information System (INIS)

    Ecer, G.M.; Meier, G.H.

    1976-01-01

    The oxidation of binary Ni--Cr alloys containing 44 and 50 wt percent Cr and Ni--50 Cr alloys with small additions of Ce, Zr, or Ti has been studied over a range of oxygen partial pressures at temperatures between 800 and 1100 0 C. The effects of cold work, surface preparation, and distribution of the Cr-rich second phase have been studied. Small additions of Ce were found to markedly reduce the rate of oxidation and improve the scale adherence. An explanation of the Ce effects is offered in terms of the stabilization of a free oxide grain size by Ce ions and/or CeO 2 particles and blocking of grain boundary short circuit diffusion paths by Ce ions. The effects of dilute additions of Ti and Zr are compared with the Ce effects

  4. High frequency III-V nanowire MOSFETs

    Science.gov (United States)

    Lind, Erik

    2016-09-01

    III-V nanowire transistors are promising candidates for very high frequency electronics applications. The improved electrostatics originating from the gate-all-around geometry allow for more aggressive scaling as compared with planar field-effect transistors, and this can lead to device operation at very high frequencies. The very high mobility possible with In-rich devices can allow very high device performance at low operating voltages. GaN nanowires can take advantage of the large band gap for high voltage operation. In this paper, we review the basic physics and device performance of nanowire field- effect transistors relevant for high frequency performance. First, the geometry of lateral and vertical nanowire field-effect transistors is introduced, with special emphasis on the parasitic capacitances important for nanowire geometries. The basic important high frequency transistor metrics are introduced. Secondly, the scaling properties of gate-all-around nanowire transistors are introduced, based on geometric length scales, demonstrating the scaling possibilities of nanowire transistors. Thirdly, to model nanowire transistor performance, a two-band non-parabolic ballistic transistor model is used to efficiently calculate the current and transconductance as a function of band gap and nanowire size. The intrinsic RF metrics are also estimated. Finally, experimental state-of-the-art nanowire field-effect transistors are reviewed and benchmarked, lateral and vertical transistor geometries are explored, and different fabrication routes are highlighted. Lateral devices have demonstrated operation up to 350 GHz, and vertical devices up to 155 GHz.

  5. Determining the Presence of Ordering in Ternary Semiconductor Alloys Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    2013-01-01

    as a simple measurement of film quality. 2. Motivation and Army Interest One common example of ordering seen in many semiconductor alloys is copper ...ARL U.S. Army Research Laboratory CuPt copper platinum Ga gallium GaInP gallium indium phosphide GaSb gallium antimonide HgCdTe mercury...RECORDS MGMT ATTN RDRL CIO LL TECHL LIB ATTN RDRL SEE I W SARNEY ADELPHI MD 20783-1197 TOTAL: 7 (1 ELEC, 6 HCS)

  6. Properties of ternary NiFeW alloy coating by jet electrodeposition

    Indian Academy of Sciences (India)

    17

    [2] Zelenovic L R, Cirovic N, Spasojevic M, Mitrovic N, Maricic A and Pavlovic V 2012 Mater. Chem. Phys. 135 212. [3] Oliveira A L M, Costa J D, Sousa M B D, Alves J J N, Campos A R N, Santana R A C and Prasad. S 2015 J. Alloys Compd. 619 697. [4] Donten M, Cesiulis H and Stojek Z 2000 Electrochim. Acta 45 3389.

  7. Investigation of solidification behavior of the Sn-rich ternary Sn–Bi–Zn alloys

    Directory of Open Access Journals (Sweden)

    S Mladenović

    2017-03-01

    Full Text Available Solidification properties and microstructure of six as-cast Sn–Bi–Zn alloys with 80 at.% of Sn and variable contents of Bi and Zn were experimentally investigated using the scanning electron microscopy (SEM with energy-dispersive X-ray spectroscopy (EDS and differential scanning calorimetry (DSC. The experimentally obtained results were compared with predicted phase equilibria according to the calculation of phase diagram (CALPHAD method and by the Scheil solidification simulation.

  8. Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys

    OpenAIRE

    De Leonardis, Francesco; Troia, Benedetto; Soref, Richard A.; Passaro, Vittorio M. N.

    2016-01-01

    Silicon (Si), tin (Sn), and germanium (Ge) alloys have attracted research attention as direct band gap semiconductors with applications in electronics and optoelectronics. In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. The wide Si, Ge and Sn transparen...

  9. Structural, Electronic and Elastic Properties of Ternary Alloy CoxNi1-xSi2

    Science.gov (United States)

    Ouchene, S.; Kadri, M. T.; Baaouague, K.; Belkhir, H.

    2013-09-01

    First-principles calculations, by means of the full-potential linearized augmented plane wave (FP-LAPW) method using the generalized gradient approximation (GGA), were carried out for the structural, electronic and elastic properties of transition metals disilicides alloy CoxNi1-xSi2 in the fluorite structure. The composition effect on lattice constants and bulk modulus has been analyzed. The deviations of the lattice constants from Vegard's law and the bulk modulus from linear concentration dependence (LCD) were observed for CoxNi1-xSi2. We also calculated the densities of states for the distorted CoxNi1-xSi2 alloys as well as for the ordered phases CoSi2 and NiSi2. Theoretical values of Young's modulus, shear modulus, Poisson's ratio and Debye temperature are estimated from the computed elastic constants. The analysis of the ratio of shear modulus to bulk modulus shows that the alloy is more brittle than the binary compounds. The calculated results are compared with other reported values.

  10. Atomistic modeling of ternary additions to NiTi and quaternary additions to Ni-Ti-Pd, Ni-Ti-Pt and Ni-Ti-Hf shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Mosca, H.O., E-mail: hmosca@cnea.gov.ar [Gcia. Investigacion y Aplicaciones, CNEA, Av. Gral Paz 1499, B1650KNA San Martin (Argentina); GCMM, UTN, FRG Pacheco, Av. H. Yrigoyen 288, Gral. Pacheco (Argentina); Bozzolo, G. [Loyola University Maryland, 4501 N. Charles St., Baltimore, MD 21210 (United States); Grosso, M.F. del [Gcia. Investigacion y Aplicaciones, CNEA, Av. Gral Paz 1499, B1650KNA San Martin (Argentina); GCMM, UTN, FRG Pacheco, Av. H. Yrigoyen 288, Gral. Pacheco (Argentina); Consejo Nacional de Investigaciones Cientificas y Tecnicas, CONICET (Argentina)

    2012-08-15

    The behavior of ternary and quaternary additions to NiTi shape memory alloys is investigated using a quantum approximate method for the energetics. Ternary additions X to NiTi and quaternary additions to Ni-Ti-Pd, Ni-Ti-Pt, and Ni-Ti-Hf alloys, for X=Au, Pt, Ir, Os, Re, W, Ta,Ag, Pd, Rh, Ru, Tc, Mo, Nb, Zr, Zn, Cu, Co, Fe, Mn, V, Sc, Si, Al and Mg are considered. Bulk properties such as lattice parameter, energy of formation, and bulk modulus of the B2 alloys are studied for variations due to the presence of one or two simultaneous additives.

  11. Modeling diffusion-governed solidification of ternary alloys - Part 2: Macroscopic transport phenomena and macrosegregation.

    Science.gov (United States)

    Wu, M; Li, J; Ludwig, A; Kharicha, A

    2014-09-01

    Part 1 of this two-part investigation presented a multiphase solidification model incorporating the finite diffusion kinetics and ternary phase diagram with the macroscopic transport phenomena (Wu et al., 2013). In Part 2, the importance of proper treatment of the finite diffusion kinetics in the calculation of macrosegregation is addressed. Calculations for a two-dimensional (2D) square casting (50 × 50 mm 2 ) of Fe-0.45 wt.%C-1.06 wt.%Mn considering thermo-solutal convection and crystal sedimentation are performed. The modeling result indicates that the infinite liquid mixing kinetics as assumed by classical models (e.g., the Gulliver-Scheil or lever rule), which cannot properly consider the solute enrichment of the interdendritic or inter-granular melt at the early stage of solidification, might lead to an erroneous estimation of the macrosegregation. To confirm this statement, further theoretical and experimental evaluations are desired. The pattern and intensity of the flow and crystal sedimentation are dependent on the crystal morphologies (columnar or equiaxed); hence, the potential error of the calculated macrosegregation caused by the assumed growth kinetics depends on the crystal morphology. Finally, an illustrative simulation of an engineering 2.45-ton steel ingot is performed, and the results are compared with experimental results. This example demonstrates the model applicability for engineering castings regarding both the calculation efficiency and functionality.

  12. III-V semiconductor devices integrated with silicon III-V semiconductor devices integrated with silicon

    Science.gov (United States)

    Hopkinson, Mark; Martin, Trevor; Smowton, Peter

    2013-09-01

    The integration of III-V semiconductor devices with silicon is one of the most topical challenges in current electronic materials research. The combination has the potential to exploit the unique optical and electronic functionality of III-V technology with the signal processing capabilities and advanced low-cost volume production techniques associated with silicon. Key industrial drivers include the use of high mobility III-V channel materials (InGaAs, InAs, InSb) to extend the performance of Si CMOS, the unification of electronics and photonics by combining photonic components (GaAs, InP) with a silicon platform for next-generation optical interconnects and the exploitation of large-area silicon substrates and high-volume Si processing capabilities to meet the challenges of low-cost production, a challenge which is particularly important for GaN-based devices in both power management and lighting applications. The diverse nature of the III-V and Si device approaches, materials technologies and the distinct differences between industrial Si and III-V processing have provided a major barrier to integration in the past. However, advances over the last decade in areas such as die transfer, wafer fusion and epitaxial growth have promoted widespread renewed interest. It is now timely to bring some of these topics together in a special issue covering a range of approaches and materials providing a snapshot of recent progress across the field. The issue opens a paper describing a strategy for the epitaxial integration of photonic devices where Kataria et al describe progress in the lateral overgrowth of InP/Si. As an alternative, Benjoucef and Reithmaier report on the potential of InAs quantum dots grown direct onto Si surfaces whilst Sandall et al describe the properties of similar InAs quantum dots as an optical modulator device. As an alternative to epitaxial integration approaches, Yokoyama et al describe a wafer bonding approach using a buried oxide concept, Corbett

  13. Thermodynamics of solid and liquid group III-V alloys

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Timothy James [Univ. of California, Berkeley, CA (United States)

    1978-10-01

    Solid-state electrochemical techniques are applied to the Ga-In-Sb-O system to measure some thermodynamic properties important for the analysis of solid-liquid phase equilibria in these important semiconductor materials. The standard Gibbs energies of formation of the most stable oxides of gallium and of indium are determined with a high-temperature solid-state electrochemical cell utilizing calcia-stabilized zirconia as the solid electrolyte and a (CO + CO2) gaseous mixture as the reference electrode.

  14. Band gap characterization of ternary BBi1-xNx (0≤x≤1) alloys using modified Becke-Johnson (mBJ) potential

    Science.gov (United States)

    Yalcin, Battal G.

    2015-04-01

    The semi-local Becke-Johnson (BJ) exchange-correlation potential and its modified form proposed by Tran and Blaha have attracted a lot of interest recently because of the surprisingly accurate band gaps they can deliver for many semiconductors and insulators (e.g., sp semiconductors, noble-gas solids, and transition-metal oxides). The structural and electronic properties of ternary alloys BBi1-xNx (0≤x≤1) in zinc-blende phase have been reported in this study. The results of the studied binary compounds (BN and BBi) and ternary alloys BBi1-xNx structures are presented by means of density functional theory. The exchange and correlation effects are taken into account by using the generalized gradient approximation (GGA) functional of Wu and Cohen (WC) which is an improved form of the most popular Perdew-Burke-Ernzerhof (PBE). For electronic properties the modified Becke-Johnson (mBJ) potential, which is more accurate than standard semi-local LDA and PBE calculations, has been chosen. Geometric optimization has been implemented before the volume optimization calculations for all the studied alloys structure. The obtained equilibrium lattice constants of the studied binary compounds are in coincidence with experimental works. And, the variation of the lattice parameter of ternary alloys BBi1-xNx almost perfectly matches with Vegard's law. The spin-orbit interaction (SOI) has been also considered for structural and electronic calculations and the results are compared to those of non-SOI calculations.

  15. Band gap characterization of ternary BBi1−xNx (0≤x≤1) alloys using modified Becke–Johnson (mBJ) potential

    International Nuclear Information System (INIS)

    Yalcin, Battal G.

    2015-01-01

    The semi-local Becke–Johnson (BJ) exchange-correlation potential and its modified form proposed by Tran and Blaha have attracted a lot of interest recently because of the surprisingly accurate band gaps they can deliver for many semiconductors and insulators (e.g., sp semiconductors, noble-gas solids, and transition-metal oxides). The structural and electronic properties of ternary alloys BBi 1−x N x (0≤x≤1) in zinc-blende phase have been reported in this study. The results of the studied binary compounds (BN and BBi) and ternary alloys BBi 1−x N x structures are presented by means of density functional theory. The exchange and correlation effects are taken into account by using the generalized gradient approximation (GGA) functional of Wu and Cohen (WC) which is an improved form of the most popular Perdew–Burke–Ernzerhof (PBE). For electronic properties the modified Becke–Johnson (mBJ) potential, which is more accurate than standard semi-local LDA and PBE calculations, has been chosen. Geometric optimization has been implemented before the volume optimization calculations for all the studied alloys structure. The obtained equilibrium lattice constants of the studied binary compounds are in coincidence with experimental works. And, the variation of the lattice parameter of ternary alloys BBi 1−x N x almost perfectly matches with Vegard's law. The spin–orbit interaction (SOI) has been also considered for structural and electronic calculations and the results are compared to those of non-SOI calculations

  16. Group III-V Bismide Materials Grown by Liquid Phase Epitaxy

    Science.gov (United States)

    Dhar, Sunanda

    Bi containing III-V compound semiconductors have become important in the last few years for many potential device applications. Molecular beam epitaxy and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III-V-Bi series. Due to the restrictions of limited solubility of Bi in III-V solids, use of LPE has so far been limited to the growth of InSbBi and GaSbBi. We describe here details of the growth procedure and the characterization of these two ternaries by different groups with special emphasis on the structural, luminescence, and band gap reduction properties. Theoretical model based on diffusion of Bi across an LPE growth model is described with a view to optimize the growth parameters. Reference is also made to the melt growth of bulk crystals of these compounds and to the LPE growth of InPBi and InAsSbBi epitaxial layers.

  17. Lattice-matched heteroepitaxy of wide gap ternary compound semiconductors

    Science.gov (United States)

    Bachmann, Klaus J.

    A variety of applications are identified for heteroepitaxial structures of wide gap I-III-VI(sub 2) and II-IV-V(sub 2) semiconductors, and are assessed in comparison with ternary III-V alloys and other wide gap materials. Non-linear optical applications of the I-III-VI(sub 2) and II-IV-V(sub 2) compound heterostructures are discussed, which require the growth of thick epitaxial layers imposing stringent requirements on the conditions of heteroepitaxy. In particular, recent results concerning the MOCVD growth of ZnSi(x)Ge(1-x)P2 alloys lattice matching Si or GaP substrates are reviewed. Also, heterostructures of Cu(z)Ag(1-z)GaS2 alloys that lattice-match Si, Ge, GaP, or GaAs substrates are considered in the context of optoelectronic devices operating in the blue wavelength regime. Since under the conditions of MOCVD, metastable alloys of the II-IV-V(sub 2) compounds and group IV elements are realized, II-IV-V(sub 2) alloys may also serve as interlayers in the integration of silicon and germanium with exactly lattice-matched tetrahedrally coordinated compound semiconductors, e.g. ZnSi(x)Ge(1-x)P2.

  18. Kinetic properties of ternary alloys Ni3Mn x Al1 - x

    Science.gov (United States)

    Volkova, N. V.; Kourov, N. I.; Marchenkov, V. V.

    2014-12-01

    Kinetic properties of Ni3Mn x Al1 - x alloys have been studied at temperatures of 4.2 to 800 K in magnetic fields up to 12 MA/m. Separate contributions to the electrical resistance have been determined: the residual resistance, phonon component, and magnetic component. The behavior of the kinetic properties typical of the ferromagnets is observed, including the positive temperature coefficient of resistance and features in the form of a bend in the curves of the temperature dependence of resistance at the Curie temperature. It is shown that the parameters of the investigated kinetic properties change substantially upon the isomorphic concentration transition L12 → L12 from the ordinary superstructure of Ni3Mn type to the Ni3Al intermetallic compound. It has been revealed that the concentration dependence of the resistance can be described in terms of the percolation theory in the model of effective medium.

  19. Structural and optoelectronic properties of BxAl1-xSb ternary alloys: first principles calculations

    Science.gov (United States)

    Benchehima, Miloud; Abid, Hamza; Chaouche, Abdallah Chabane; Resfa, Abbes

    2017-03-01

    In this paper, the full potential linearized augmented plane wave (FP-LAPW) formalism based on density functional theory (DFT) has been performed. To study the structural properties of BxAl1-xSb at different boron concentrations x (0 ≤ x ≤ 1), we have used the local density approximation (LDA) and the generalized gradient approximation of Wu and Cohen (GGA-WC). The phase stability of AlSb and BSb binary compounds in zinc-blend and rock salt phases has been investigated. The equilibrium lattice constant (a), bulk modulus (B) and pressure derivative of bulk modulus B' have been evaluated in both phases. We observe a small deviation from the linear concentration dependence (LCD) of the lattice constant parameter, while an important deviation of bulk modulus from "LCD" has been remarked. We have compared the results obtained to the available theoretical and experimental data for the binaries. The optoelectronic properties of BxAl1-xSb are studied in the most stable determined phase. In addition to the "GGA-WC", the GGA of Engel and Vosko, and the recent developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) schemes were used to study the electronic properties of BxAl1-xSb ternary alloys. It is found that the band gap of BxAl1-xSb vary non-linearly with the boron concentrations, giving a negative deviation from Vegard's law. In addition, the optical properties such as the dielectric function, complex refractive index, absorption coefficient, optical conductivity and absorption coefficient are discussed in detail.

  20. InN/GaN short-period superlattices as ordered InGaN ternary alloys

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

    2016-01-01

    Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Macrosegregation in horizontal direct chill casting of ternary Al alloys: Investigation of solid motion

    International Nuclear Information System (INIS)

    Vušanović, I; Krane, M J M

    2012-01-01

    Macrosegregation in direct chill casting processes is controlled by fluid flow due to the thermosolutal natural and forced convection, shrinkage, and transport of unattached solid grains. Because grain refinement is usually used in aluminum direct chill casting, some effort must be made to model free-floating solid grains, and their attachment to a rigid mushy zone. Criteria for attachment vary, but many are based on using a critical solid packing fraction, which is treated as uniform and constant throughout the domain. In the case of horizontal casting (HDC), gravity acts perpendicularly to the casting direction, and the assumption of a uniform packing fraction cannot be applied because the solid particles attach to some surfaces by settling and others by being swept into the rigid solid from below. In this simulation of HDC casting of an Al-Cu-Mg alloy, the rigid and unattached solid is tracked separately, and a rule set is developed to determine the attachment of free-floating solid. Comparison between cases with and without unattached solid movement shows qualitatively different results, particularly in bottom part of slab. Non-uniform packing fractions cause very different segregation patterns in the lower half of the ingot compared to the cases with no solid movement, less segregation near centerline compared to uniform packing fraction cases, and positive segregation near the place where inlet jet impinges on the mushy zone.

  2. Study on Mg/Al Weld Seam Based on Zn–Mg–Al Ternary Alloy

    Directory of Open Access Journals (Sweden)

    Liming Liu

    2014-02-01

    Full Text Available Based on the idea of alloying welding seams, a series of Zn–xAl filler metals was calculated and designed for joining Mg/Al dissimilar metals by gas tungsten arc (GTA welding. An infrared thermography system was used to measure the temperature of the welding pool during the welding process to investigate the solidification process. It was found that the mechanical properties of the welded joints were improved with the increasing of the Al content in the Zn–xAl filler metals, and when Zn–30Al was used as the filler metal, the ultimate tensile strength could reach a maximum of 120 MPa. The reason for the average tensile strength of the joint increasing was that the weak zone of the joint using Zn–30Al filler metal was generated primarily by α-Al instead of MgZn2. When Zn–40Al was used as the filler metal, a new transition zone, about 20 μm-wide, appeared in the edge of the fusion zone near the Mg base metal. Due to the transition zones consisting of MgZn2- and Al-based solid solution, the mechanical property of the joints was deteriorated.

  3. Topological phase transition in the ternary half-Heusler alloy ZrIrBi

    Science.gov (United States)

    Barman, C. K.; Alam, Aftab

    2018-02-01

    Half-Heusler alloys provide a new platform for deriving a host of topologically exotic compounds through the inherent flexibility of tuning their hybridization strength (via lattice parameters), spin-orbit strength, substitution/doping, etc. Using the first-principles calculation within the density functional theory, we explore the possibility of realizing a topological insulating phase in a new half-Heusler material ZrIrBi. We discovered three routes through which ZrIrBi can be transformed to exhibit a topological nontrivial phase. They are (i) a hydrostatic expansion by 1% causing a band inversion with zero gap, (ii) a uniaxial strain along (001) direction which opens a band gap while preserving the inverted band order, and (iii) substitution of 50% Bi by As and 50% Zr by Hf forming the compounds ZrIr (As0.5Bi0.5 ) and (Zr0.5Hf0.5 )IrBi again showing a topologically nontrivial band inversion. A definitive proof of the surface conduction in all three cases are done by simulating surface band structures. We report the formation energies and the phonon dispersion for the three cases to confirm the chemical and mechanical stability of the compounds.

  4. Magnetooptical investigations on ferromagnetic III-V-semiconductors; Magnetooptische Untersuchungen an ferromagnetischen III-V-Halbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Winter, Andreas

    2009-07-23

    Magnetooptical Kerr effect (MOKE) and Magnetic Circular Dichroism (MCD) have been used to investigate magnetic as well as bandstructure properties of diluted magnetic III-V-semiconductors containing Mn. In these ferromagnetic systems it has been found that the strength of the observed effects depends linearly on the magnetization of the samples with no influence of the external magnetic field. The magnetooptical effects allowed the recording of hysteresis loops of GaMnAs, GaMnSb, InMnAs and InMnSb samples for different temperatures and in the case of GaMnAs also for different alignments of the external magnetic field with respect to the easy axis of magnetization. The Stoner-Wohlfahrt-Model has been used to describe the resulting shapes of the loops yielding the magnetic anisotropy parameters of the samples. For magnetically saturated samples, spectra of MOKE and MCD have been recorded. Contrary to pure III-V-semiconductors, which exhibit lots of sharp resonances due to interband transitions between Landau levels, III-Mn-V-semi-conductors how only very few (or just one) considerably broad resonance(s). Their spectral position(s) do(es) neither depend upon the magnetic field as it would be the case for pure III-V-semiconductors nor the magnetization. Only the amplitude increases linearly with the magnetization. Utilizing a kp-theory it has been possible to describe the observed dependencies. Valence- and conduction-band are split into Landau levels by the external magnetic field and, in addition to the Zeeman-effect, the spin-levels are split by the exchange interaction between the localized electrons of the Mn ions and the free carriers which is proportional to the magnetization of the samples. This splitting is much bigger than the Landau level splitting. Due to an inhomogeneous distribution of the Mn ions and due to the high carrier density the Landau levels are strongly broadened and their structure is not observable. Owing to the high carrier-concentration in

  5. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  6. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  7. Cr-doped III-V nitrides: Potential candidates for spintronics

    KAUST Repository

    Amin, Bin

    2011-02-19

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.

  8. Cr-Doped III-V Nitrides: Potential Candidates for Spintronics

    Science.gov (United States)

    Amin, B.; Arif, S.; Ahmad, Iftikhar; Maqbool, M.; Ahmad, R.; Goumri-Said, S.; Prisbrey, K.

    2011-06-01

    Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al0.75Cr0.25N, Ga0.75Cr0.25N, and In0.75Cr0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al0.75Cr0.25N and Ga0.75Cr0.25N are half-metallic dilute magnetic semiconductors while In0.75Cr0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices.

  9. First-Principles Calculations of Structural, Electronic and Optical Properties of Ternary Semiconductor Alloys ZAs x Sb1- x ( Z = B, Al, Ga, In)

    Science.gov (United States)

    Bounab, S.; Bentabet, A.; Bouhadda, Y.; Belgoumri, Gh.; Fenineche, N.

    2017-08-01

    We have investigated the structural and electronic properties of the BAs x Sb 1- x , AlAs x Sb 1- x , GaAs x Sb 1- x and InAs x Sb 1- x semiconductor alloys using first-principles calculations under the virtual crystal approximation within both the density functional perturbation theory and the pseudopotential approach. In addition the optical properties have been calculated by using empirical methods. The ground state properties such as lattice constants, both bulk modulus and derivative of bulk modulus, energy gap, refractive index and optical dielectric constant have been calculated and discussed. The obtained results are in reasonable agreement with numerous experimental and theoretical data. The compositional dependence of the lattice constant, bulk modulus, energy gap and effective mass of electrons for ternary alloys show deviations from Vegard's law where our results are in agreement with the available data in the literature.

  10. Ab-initio study of structural, elastic, electronic and thermodynamic properties of BaxSr1−xS ternary alloys

    Directory of Open Access Journals (Sweden)

    Chelli S.

    2015-12-01

    Full Text Available The structural, elastic, electronic and thermodynamic properties of BaxSr1−xS ternary alloys have been investigated using the full-potential (linearized augmented plane wave method. The ground state properties, such as lattice constant, bulk modulus and elastic constants, are in good agreement with numerous experimental and theoretical data. The dependence of the lattice parameters, bulk modulus and band gap on the composition x was analyzed. Deviation of the lattice constant from Vegard’s law and the bulk modulus from linear concentration dependence (LCD was observed. The microscopic origins of the gap bowing were explained by using the approach of Zunger et al. The thermodynamic stability of BaxSr1−xS alloy was investigated by calculating the excess enthalpy of mixing, ΔHm and the calculated phase diagram showed a broad miscibility gap with a critical temperature.

  11. Heat capacities, magnetic properties, and resistivities of ternary RPdBi alloys where R = La, Nd, Gd, Dy, Er, and Lu

    International Nuclear Information System (INIS)

    Riedemann, T.M.

    1996-01-01

    Over the past four and a half decades research on the rare earths, their compounds, and their alloys has yielded significant insights into the nature of materials. The rare earths can be used to systematically study a series of alloys or compounds. Magnetic ordering, crystalline fields, spin fluctuations, the magnetocaloric effect, and magnetostriction are a small sample of phenomena studied that are exhibited by the rare earth family. A significant portion of research has been conducted on the abundant RM 2 and RM phases, where R is the rare earth and M is a transition metal. The natural progression of science has led to the study of related RMX ternary phases, where X is either another transition metal or semimetal. There are now over 1,000 known RMX phases. The focus of this study is on RPdBi where R = La, Nd, Gd, Dy, Er, and Lu. Their heat capacities, magnetic properties, and resistivities are studied

  12. Development of III-V/Si Multijunction Space Photovoltaics

    Data.gov (United States)

    National Aeronautics and Space Administration — High substrate costs, as well as weight, typically play a major role in the high costs of multijunction space solar cell production and deployment. III-V/Si...

  13. Growth and structural characterization of III-V semiconductor nanowires

    OpenAIRE

    Rieger, Torsten

    2015-01-01

    In this thesis, the growth and structural properties of III-V semiconductor nanowires and nanowire heterostructures are studied. These nanowires represent structures suitable for both fundamental physics and applications in electronic devices such as (tunnel) field effect transistors. The III-V nanowires are grown with molecular beam epitaxy, high κ dielectric layers are deposited conformally around the nanowires by atomic layer deposition. The morphological and structural characteristics of ...

  14. Hybrid III-V/SOI Resonant Cavity Photodetector

    DEFF Research Database (Denmark)

    Learkthanakhachon, Supannee; Taghizadeh, Alireza; Park, Gyeong Cheol

    2016-01-01

    A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization.......A hybrid III-V/SOI resonant cavity photo detector has been demonstrated, which comprises an InP grating reflectorand a Si grating reflector. It can selectively detects an incident light with 1.54-µm wavelength and TM polarization....

  15. A Platinum Monolayer Core-Shell Catalyst with a Ternary Alloy Nanoparticle Core and Enhanced Stability for the Oxygen Reduction Reaction

    Directory of Open Access Journals (Sweden)

    Haoxiong Nan

    2015-01-01

    Full Text Available We synthesize a platinum monolayer core-shell catalyst with a ternary alloy nanoparticle core of Pd, Ir, and Ni. A Pt monolayer is deposited on carbon-supported PdIrNi nanoparticles using an underpotential deposition method, in which a copper monolayer is applied to the ternary nanoparticles; this is followed by the galvanic displacement of Cu with Pt to generate a Pt monolayer on the surface of the core. The core-shell Pd1Ir1Ni2@Pt/C catalyst exhibits excellent oxygen reduction reaction activity, yielding a mass activity significantly higher than that of Pt monolayer catalysts containing PdIr or PdNi nanoparticles as cores and four times higher than that of a commercial Pt/C electrocatalyst. In 0.1 M HClO4, the half-wave potential reaches 0.91 V, about 30 mV higher than that of Pt/C. We verify the structure and composition of the carbon-supported PdIrNi nanoparticles using X-ray powder diffraction, X-ray photoelectron spectroscopy, thermogravimetry, transmission electron microscopy, and energy dispersive X-ray spectrometry, and we perform a stability test that confirms the excellent stability of our core-shell catalyst. We suggest that the porous structure resulting from the dissolution of Ni in the alloy nanoparticles may be the main reason for the catalyst’s enhanced performance.

  16. First-principle study of the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP

    Science.gov (United States)

    Yang, H. Q.; Song, T. L.; Liang, X. X.; Zhao, G. J.

    2015-01-01

    In this work, the electronic band structure and the effective mass of the ternary alloy GaxIn1-xP are studied by the first principle calculations. The software QUANTUM ESPRESSO and the generalized gradient approximation (GGA) for the exchange correlations have been used in the calculations. We calculate the lattice parameter, band gap and effective mass of the ternary alloy GaxIn1-xP for the Ga composition x varying from 0.0 to 1.0 by the step of 0.125. The effect of the Ga composition on the lattice parameter and the electronic density of states are discussed. The results show that the lattice parameter varies with the composition almost linearly following the Vegard's law. A direct-to-indirect band-gap crossover is found to occur close to x = 0.7. The effective masses are also calculated at Γ(000) high symmetry point along the [100] direction. The results show that the band gap and the electron effective mass vary nonlinearly with composition x.

  17. Analysis of antiphase domain growth in ternary FeCo alloys after different cooling rates and annealing treatments using neutron diffraction and positron annihilation

    International Nuclear Information System (INIS)

    Gilles, Ralph; Hofmann, Michael; Johnson, Francis; Gao Yan; Mukherji, Debashis; Hugenschmidt, Christoph; Pikart, Philip

    2011-01-01

    Research highlights: → In-situ observation at high temperatures of atomic position change Fe and Co with neutron diffraction. → Determination of antiphase domain growth with neutron diffraction. → Determination of vacacny defects at antiphase domain boundaries with positron annihilation. → Combination of neutron diffraction and positron annihilation to correlate ordering/disordering process and the defect density of ternary FeCo alloys. - Abstract: FeCo alloys are industrially important engineering materials which play an outstanding role in applications requiring soft magnetic materials. The challenge is to include ternary elements to improve the mechanical properties. Here noble elements as Pt or Pd were used for these experiments. With neutron diffraction and positron annihilation technique Fe 67 Co 30 Pt 3 and Fe 67 Co 30 Pd 3 (at. pct.) samples were measured to study the influence of different cooling rates on ordering and disordering. The ordering and disordering process is responsible for the mechanical properties in dependence of temperature. The correlation of ordering and defect density is described.

  18. First-principles study on half-metallic ferromagnetic properties of Zn{sub 1-x}V{sub x}Se ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Khatta, Swati; Tripathi, S.K.; Prakash, Satya [Panjab University, Central of Advanced Study in Physics, Department of Physics, Chandigarh (India)

    2017-09-15

    The spin-polarised density functional theory along with self-consistent plane-wave pseudopotential is used to investigate the half-metallic ferromagnetic properties of ternary alloys Zn{sub 1-x}V{sub x}Se. The generalized gradient approximation is used for exchange-correlation potential. The equilibrium lattice constants, bulk modulus, and its derivatives are calculated. The calculated spin-polarised energy-band structures reveal that these alloys are half-metallic for x = 0.375 and 0.50 and nearly half-metallic for other values of x. The estimated direct and indirect bandgaps may be useful for the magneto-optical absorption experiments. It is found that there is strong Zn 4s, Se 4p, and V 3d orbital hybridization in the conduction bands of both the spins, while Se 4p and V 3d orbital hybridization predominates in the valence bands of both the spins. The s, p-d, and p-d orbital hybridization reduces the local magnetic moment of V atoms and small local magnetic moments are produced on Zn and Se atoms which get coupled with V atoms in ferromagnetic and antiferromagnetic phases, respectively. The conduction and valence-band-edge splittings and exchange constants predict the ferromagnetism in these alloys. The conduction band-impurity (s and p-d) exchange interaction is more significant for ferromagnetism in these alloys than the valence band-impurity (p-d) exchange interaction. (orig.)

  19. Indirect-to-direct band gap transition in relaxed and strained Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Attiaoui, Anis; Moutanabbir, Oussama [Department of Engineering Physics, École Polytechnique de Montréal, Montréal, C.P. 6079, Succ. Centre-Ville, Montréal, Québec H3C 3A7 (Canada)

    2014-08-14

    Sn-containing group IV semiconductors create the possibility to independently control strain and band gap thus providing a wealth of opportunities to develop an entirely new class of low dimensional systems, heterostructures, and silicon-compatible electronic and optoelectronic devices. With this perspective, this work presents a detailed investigation of the band structure of strained and relaxed Ge{sub 1−x−y}Si{sub x}Sn{sub y} ternary alloys using a semi-empirical second nearest neighbors tight binding method. This method is based on an accurate evaluation of the deformation potential constants of Ge, Si, and α-Sn using a stochastic Monte-Carlo approach as well as a gradient based optimization method. Moreover, a new and efficient differential evolution approach is also developed to accurately reproduce the experimental effective masses and band gaps. Based on this, we elucidated the influence of lattice disorder, strain, and composition on Ge{sub 1−x−y}Si{sub x}Sn{sub y} band gap energy and directness. For 0 ≤ x ≤ 0.4 and 0 ≤ y ≤ 0.2, we found that tensile strain lowers the critical content of Sn needed to achieve a direct band gap semiconductor with the corresponding band gap energies below 0.76 eV. This upper limit decreases to 0.43 eV for direct gap, fully relaxed ternary alloys. The obtained transition to direct band gap is given by y > 0.605 × x + 0.077 and y > 1.364 × x + 0.107 for epitaxially strained and fully relaxed alloys, respectively. The effects of strain, at a fixed composition, on band gap directness were also investigated and discussed.

  20. Investigation of strain effects on phase diagrams in the ternary nitride alloys (InAlN, AlGaN, InGaN)

    Energy Technology Data Exchange (ETDEWEB)

    Mohamad, Ranim; Chen, Jun; Ruterana, Pierre [CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UNICAEN, Caen (France); Bere, Antoine [Laboratoire de Physique et de Chimie de l' Environnement, Universite Ouaga I Pr Joseph KI-ZERBO, Ouagadougou (Burkina Faso)

    2017-09-15

    In this work, we used a modified Stillinger-Weber potential and a methodology of free energy calculation based on numerical computation of the configuration partition function of an alloy, to make a comprehensive study of the properties of group-III nitride ternary compounds (In{sub x}Ga{sub 1-x}N; In{sub x}Al{sub 1-x}N; Al{sub x}Ga{sub 1-x}N). The wurtzite structure was used; and the critical temperatures for the random ternary alloys are determined as 2717 K for In{sub x}Al{sub 1-x}N, 1718 K for In{sub x}Ga{sub 1-x}N, and 177 K for Al{sub x}Ga{sub 1-x}N, respectively. Therefore, Al{sub x}Ga{sub 1-x}N has no unstable mixing region at typical growth temperatures around 1100 C. In contrast, In{sub x}Al{sub 1-x}N and In{sub x}Ga{sub 1-x}N exhibit a wide unstable region, which means that being thick layers, their stability as homogeneous alloys is probably limited. In agreement with other reports, it is also pointed out that the critical temperature T{sub c} may be decreased when the layers are grown under strain. Although the compression and extension have the same effect below 1.5% strain, it is shown, for the first time, that when the compressive strain goes beyond, T{sub c} abruptly increases in contrast to the case of tensile strain where it continues to decrease. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. High concentration photovoltaic systems applying III-V cells

    International Nuclear Information System (INIS)

    Zubi, Ghassan; Bernal-Agustin, Jose L.; Fracastoro, Gian Vincenzo

    2009-01-01

    High concentration systems make use of the direct solar beam and therefore are suitable for application in regions with high annual direct irradiation values. III-V PV cells with a nominal efficiency of up to 39% are readily available in today's market, with further efficiency improvements expected in the years ahead. The relatively high cost of III-V cells limits their terrestrial use to applications under high concentration, usually above 400 suns. In this way the relatively high cell cost is compensated through the low amount for cells needed per kW nominal system output. This paper presents a state of the art of high concentration photovoltaics using III-V cells. This PV field accounts already for more than 20 developed systems, which are commercially available or shortly before market introduction. (author)

  2. Research progress of III-V laser bonding to Si

    Science.gov (United States)

    Bo, Ren; Yan, Hou; Yanan, Liang

    2016-12-01

    The vigorous development of silicon photonics makes a silicon-based light source essential for optoelectronics' integration. Bonding of III-V/Si hybrid laser has developed rapidly in the last ten years. In the tireless efforts of researchers, we are privileged to see these bonding methods, such as direct bonding, medium adhesive bonding and low temperature eutectic bonding. They have been developed and applied to the research and fabrication of III-V/Si hybrid lasers. Some research groups have made remarkable progress. Tanabe Katsuaki of Tokyo University successfully implemented a silicon-based InAs/GaAs quantum dot laser with direct bonding method in 2012. They have bonded the InAs/GaAs quantum dot laser to the silicon substrate and the silicon ridge waveguide, respectively. The threshold current of the device is as low as 200 A/cm2. Stevan Stanković and Sui Shaoshuai successfully produced a variety of hybrid III-V/Si laser with the method of BCB bonding, respectively. BCB has high light transmittance and it can provide high bonding strength. Researchers of Tokyo University and Peking University have realized III-V/Si hybrid lasers with metal bonding method. We describe the progress in the fabrication of III-V/Si hybrid lasers with bonding methods by various research groups in recent years. The advantages and disadvantages of these methods are presented. We also introduce the progress of the growth of III-V epitaxial layer on silicon substrate, which is also a promising method to realize silicon-based light source. I hope that readers can have a general understanding of this field from this article and we can attract more researchers to focus on the study in this field.

  3. FOREWORD: The physics of III-V nitrides The physics of III-V nitrides

    Science.gov (United States)

    Ridley, B. K.

    2009-04-01

    The evolution of semiconductor physics is driven by the increasing sophistication of the art of crystal growing and fabrication techniques. From Ge at the birth of the transistor, possibly the purest material ever grown, through Si, the work-horse of the crystal revolution, to the III-Vs, whose optical properties opened up a second front, namely, optoelectronics. Crystal growth with monolayer control gave us quantum wells, superlattices, quantum wires and quantum dots, along with the quantum Hall effect and quantized resistance. The potential for high-power devices triggered interest in the III-V nitrides with their large bandgaps. The nitrides mostly crystallize in the hexagonal form, and this has introduced the phenomenon of spontaneous polarization into mainstream semiconductor physics. Its effect manifests itself in huge electric fields in heterostructures like AlGaN/GaN which, in turn, causes the induction of substantial electron populations in the channel of a HFET without the need for doping. High-power microwave transistors have been successfully fabricated, even though there are features associated with spontaneous polarization that still needs clarifying. Another strange effect is the large electron population on the surface of InN. The lack of a suitable substrate for growing GaN has meant that the dislocation density is higher than we would wish, but that situation is expected to steadily improve. Given the current interest in the physics of nitrides, it is natural to come across a special issue devoted to this topic. The difficulty presented by the surface layer in InN in the attempt to measure transport properties is discussed in the paper by King et al. A property that can affect transport is the lifetime of optical phonons and its dependence on electron density. Measurements of phonon lifetime in InN are reported by Tsen and Ferry, and in GaN channels, via the measure of hot-electron fluctuations, by Matulionis. The dependence on electron density is

  4. Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors

    Science.gov (United States)

    2009-03-01

    Time Dependent Annealing Study of Silicon Implanted Aluminum Gallium Nitride,” Master’s Thesis, Air Force Institute of Technology (AU), Wright...Arsenide, Indium Gallium Antimonide , Electrical Characterization, Optical Characterization, Hall Measurements, Mobility, Conductivity, Carrier

  5. Ternary superconductors

    International Nuclear Information System (INIS)

    Giorgi, A.L.

    1987-01-01

    Ternary superconductors constitute a class of superconducting compounds with exceptional properties such as high transition temperatures (≅ 15.2 K), extremely high critical fields (H c2 >60 Tesla), and the coexistence of superconductivity and long-range magnetic order. This has generated great interest in the scientific community and resulted in a large number of experimental and theoretical investigations in which many new ternary compounds have been discovered. A review of some of the properties of these ternary compounds is presented with particular emphasis on the ternary molybdenum chalcogenides and the ternary rare earth transition metal tetraborides. The effect of partial substitution of a second metal atom to form pseudoternary compounds is examined as well as some of the proposed correlations between the superconducting transition temperature and the structural and electronic properties of the ternary superconductors

  6. Etude de nanostructures III-V sur GaP pour l'émission laser sur Si

    OpenAIRE

    Robert , Cédric

    2013-01-01

    This PhD work focuses on the study of III-V semiconductor nanostructures for the development of laser on Si substrate in a pseudomorphic approach. GaP-based alloys and more specifically dilute nitride GaPN-based alloys are expected to guarantee a low density of crystalline defects through a perfect lattice-matched growth. An extended tight-binding model is first presented to deal with the theoretical challenges for the simulation of electronic and optical properties of semiconductor structure...

  7. Trace element control in binary Ni-25Cr and ternary Ni-30Co-30Cr master alloy castings

    Energy Technology Data Exchange (ETDEWEB)

    Detrois, Martin [National Energy Technology Lab. (NETL), Albany, OR (United States); Oak Ridge Inst. for Science and Education (ORISE), Oak Ridge, TN (United States); Jablonski, Paul D. [National Energy Technology Lab. (NETL), Albany, OR (United States);

    2017-10-23

    Electro-slag remelting (ESR) is used for control of unwanted elements in commercial alloys. This study focuses on master alloys of Ni-25Cr and Ni-30Co-30Cr, processed through a combination of vacuum induction melting (VIM) and electro-slag remelting (ESR). Minor additions were made to control tramp element levels and modify the melting characteristics. Nitrogen and sulfur levels below 10 ppm and oxygen levels below 100 ppm were obtained in the final products. The role of the alloy additions in lowering the tramp element content, the resulting residual inclusions and the melting characteristics were determined computationally and confirmed experimentally. Additions of titanium were beneficial to the control of oxygen levels during VIM and nitrogen levels during ESR. Aluminum additions helped to control oxygen levels during remelting, however, aluminum pickup occurred when excess titanium was present during ESR. The usefulness of these master alloys for use as experimental remelt stock will also be discussed.

  8. Heterointegrated III-V/Si distributed feedback lasers

    Science.gov (United States)

    Duprez, Helene; Descos, Antoine; Ferrotti, Thomas; Jany, Chistophe; Harduin, Julie; Myko, André; Sciancalepore, Corrado; Seassal, Christian; Ben Bakir, Badhise

    2015-02-01

    With an ever-growing transmission data rate, electronic components reach a limit silicon photonics may overcome. This technology provides integrated circuits in which light is generated within hybrid III-V/Si lasers and modulated to transmit the desired information through silicon waveguides to input/output active/passive components such as wavelength (de-)multiplexers, fiber couplers and photodetectors. Nevertheless, high aggregate bandwidth through wavelength division multiplexing demands for spectrally narrowband lasers with high side-mode suppression ratio (SMSR). Distributed feedback (DFB) lasers offer such a great selectivity. We report hybrid III-V on Silicon DFB lasers emitting at 1550nm and 1310nm. The III-V material is wafer-bonded to patterned silicon-on-insulator (SOI) wafers. The laser cavity is obtained by etching a grating in the silicon, while silicon adiabatic tapers are used to couple light from/to III-V waveguides to/from the passive silicon circuitry, in order to maximize the laser available gain and output power. Gratings are either etched on the top of the silicon waveguide or on its sides, thus relaxing the taper dimension constraint. At 1550nm, the investigated device operates under continuous wave regime with a room temperature threshold current of 70mA, an SMSR as high as 45dB and an optical power in the waveguide higher than 40mW. At 1310nm, a threshold current of 35mA, an SMSR of 45dB and an optical power coupled into a single-mode fiber higher than 1.5mW are demonstrated.

  9. Antisites in III-V semiconductors: Density functional theory calculations

    KAUST Repository

    Chroneos, A.

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III=Al, Ga, and In and V=P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III V q) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V I I I q) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III V q defects dominate under III-rich conditions and V I I I q under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies. © 2014 AIP Publishing LLC.

  10. Study of the ternary alloy systems Al-Ni-Fe and Al-Cu-Ru with special regard to quasicrystalline phases

    International Nuclear Information System (INIS)

    Lemmerz, U.

    1996-07-01

    Two ternary alloy-systems, the Al-Ni-Fe system and the Al-Cu-Ru system were studied with special regard to quasicrystalline phases. Isothermal sections were established in both systems in the stoichiometric area of the quasicrystalline phase. In the Al-Ni-Fe system a new stable decagonal phase was found. Its stoichiometric range is very small around Al 71.6 Ni 23.0 Fe 5.4 . The temperature range in which it is stable lies between 847 and 930 C. The decagonal phase undergoes a eutectoid reaction to the three crystalline phases Al 3 Ni 2 , Al 3 Ni and Al 13 Fe 4 at 847 C. It melts peritectically at 930 C forming Al 13 Fe 4 , Al 3 Ni 2 and a liquid. The investigations in the Al-Cu-Ru system concentrated on the phase equilibria between the icosahedral phase and its neighbouring phases in a temperature range between 600 and 1000 C. The icosahedral phase was observed in the whole temperature range. The investigated stoichiometric area extends down to Al contents of 45%, which allows the fields of existence to be determined for the ternary phases α-AlCuRu, the icosahedral phase and Al 7 Cu 2 Ru. Binary phases were determined down to the upper (high Al content) border of AlRu. No hitherto unknown phase was observed in the investigated area. Rietveld analyses were carried out on α-AlCuRu and Al 7 Cu 2 Ru showing some discrepancies from the α-AlMnSi structure taken as a base for α-AlCuRu and confirming the Al 7 Cu 2 Fe structure for Al 7 Cu 2 Ru. (orig.)

  11. Ternary fission

    Indian Academy of Sciences (India)

    2015-08-05

    Aug 5, 2015 ... We present the ternary fission of 252Cf and 236U within a three-cluster model as well as in a level density approach. The competition between collinear and equatorial geometry is studied by calculating the ternary fragmentation potential as a function of the angle between the lines joining the stationary ...

  12. Ternary fission

    Indian Academy of Sciences (India)

    respectively, which are expressed in MeV and taken from [12]. The ternary fragmentation potential between the three (spherical) fragments (referred to as PES), within the TCM [1–6], is defined as the sum of the total Coulomb potential, total nuclear potential, ℓ-dependent potential and the sum of the mass excesses of ternary.

  13. Ternary fission

    Indian Academy of Sciences (India)

    the energy minimization of all possible ternary breakups of a heavy radioactive nucleus. Further, within the TCM we have analysed the competition between different geometries as well as different positioning of the fragments. Also, an attempt was made to calculate the mass distribution of ternary fission process within the ...

  14. Influence of aging at 180C on the corrosion behaviour of a ternary Al-Li-Zr alloy

    DEFF Research Database (Denmark)

    Ambat, Rajan; Prasad, R.K.; Dwarakadasa, E.S.

    1994-01-01

    The influence of aging at 180 °C on the corrosion behaviour of an Al-1.5%Li-0.1%Zr alloy has been studied using weight loss, open circuit potential (OCP) measurements and potentiodynamic polarization measurements in 3.5% NaCl solution. Corrosion rates obtained from weight loss and Icorr values...

  15. Synthesis, characterization and magnetic properties of nanocrystalline FexNi80-xCo20 ternary alloys

    Science.gov (United States)

    Dalavi, Shankar B.; Theerthagiri, J.; Raja, M. Manivel; Panda, R. N.

    2013-10-01

    Fe-Ni-Co alloys of various compositions (FexNi80-xCo20,x=20-50) were synthesized by using a sodium borohydride reduction route. The phase purity and crystallite size was ascertained by using powder X-ray diffraction (XRD). The alloys crystallize in the face centered cubic (fcc) structure with lattice parameters, a=3.546-3.558 Å. The XRD line broadening indicates the fine particle nature of the materials. The estimated crystallite sizes were found to be 27.5, 27, 24, and 22.8 nm for x=20, 30, 40, and 50; alloys respectively. Scanning electron micrograph studies indicates particle sizes to be in the range of 83-60 nm for Fe-Ni-Co alloys. The values of saturation magnetization for FexNi80-xCo20 are found to be in the range of 54.3-41.2 emu/g and are significantly lower than the bulk values (175-180 emu/g). The coercivity decreases from 170 to 122 Oe with decrease in Fe content. The observed magnetic behavior has been explained on the basis of size, surface effects, spin canting and the presence of superparamagnetic fractions in the ultrafine materials.

  16. Establishment of technological basis for fabrication of U-Pu-Zr ternary alloy fuel pins for irradiation tests in Japan

    International Nuclear Information System (INIS)

    Kikuchi, Hironobu; Iwai, Takashi; Nakajima, Kunihisa; Arai, Yasuo; Nakamura, Kinya; Ogata, Takanari

    2011-01-01

    A high-purity Ar gas atmosphere glove box accommodating injection casting and sodium-bonding apparatuses was newly installed in the Plutonium Fuel Research Facility of Oarai Research and Development Center, Japan Atomic Energy Agency, in which several nitride and carbide fuel pins were fabricated for irradiation tests. The experiences led to the establishment of the technological basis of the fabrication of U-Pu-Zr alloy fuel pins for the first time in Japan. After the injection casting of the U-Pu-Zr alloy, the metallic fuel pins were fabricated by welding upper and lower end plugs with cladding tubes of ferritic-martensitic steel. Subsequent to the sodium bonding for filling the annular gap region between the U-Pu-Zr alloy and the cladding tube with the melted sodium, the fuel pins for irradiation tests are inspected. This paper shows the apparatuses and the technological basis for the fabrication of U-Pu-Zr alloy fuel pins for the irradiation test planned at the experimental fast test reactor Joyo. (author)

  17. Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

    Science.gov (United States)

    Alterovitz, Samuel A.; Sekula-Moise, Patricia A.; Sieg, Robert M.; Drotos, Mark N.; Bogner, Nancy A.

    1992-01-01

    An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

  18. III-V Nitride based piezoresistive microcantilever for sensing applications

    Science.gov (United States)

    Qazi, Muhammad; DeRoller, Nicholas; Talukdar, Abdul; Koley, Goutam

    2011-11-01

    III-V Nitride based microcantilevers, with AlGaN/GaN heterostructure field effect transistor as the piezoresistive deflection transducer, have been investigated under steady state, transient, ac, and UV illuminated conditions and compared to theoretical calculations. The steady state transverse gauge factor (GFt) was found to be much larger than theoretical estimates and increased regularly with more negative gate bias. Transient GFt demonstrated opposite sign but similar gate bias dependence and was measured as high as ˜860. Measurements under ac biasing conditions and UV illumination resulted in a lower GFt of ˜13, which agrees with theoretical calculations owing to elimination of charge trapping effects.

  19. Subsurface dimerization in III-V semiconductor (001) surfaces

    DEFF Research Database (Denmark)

    Kumpf, C.; Marks, L.D.; Ellis, D.

    2001-01-01

    We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms...... takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model....

  20. First-principle study of the structural, electronic, and optical properties of cubic InN{sub x}P{sub 1-x} ternary alloys under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Hattabi, I. [Ibn Khaldoun Univ. de Tiaret (Algeria). Lab. Synthese et Catalyse; Abdiche, A.; Riane, R. [Sidi-bel-Abbes Univ. (Algeria). Applied Materials Lab.; Moussa, R. [Sidi-bel-Abbes Univ. (Algeria). Physic Dept.; Hadji, K. [Ibn Khaldoun Univ. de Tiaret (Algeria). Science and Technology Dept.; Soyalp, F. [Yuezuencue Yil Univ., Van (Turkey). Dept. of Physics; Varshney, Dinesh [Devi Ahilya Univ., Indore (India). Materials Science Lab.; Syrotyuk, S.V. [National Univ. ' Lviv Polytechnic' , Lviv (Ukraine). Semiconductor Electronics Dept.; Khenata, R. [Mascara Univ. (Algeria). Lab. de Physique Quantique et de Modelisation Mathematique (LPQ3M)

    2016-07-01

    In this article, we present results of the first-principle study of the structural, electronic, and optical properties of the InN, InP binary compounds and their related ternary alloy InN{sub x}P{sub 1-x} in the zinc-blend (ZB) phase within a nonrelativistic full potential linearised augmented plan wave (FP-LAPW) method using Wien2k code based on the density functional theory (DFT). Different approximations of exchange-correlation energy were used for the calculation of the lattice constant, bulk modulus, and first-order pressure derivative of the bulk modulus. Whereas the lattice constant decreases with increasing nitride composition x. Our results present a good agreement with theoretical and experimental data. The electronic band structures calculated using Tran-Blaha-modified Becke-Johnson (TB-mBJ) approach present a direct band gap semiconductor character for InN{sub x}P{sub 1-x} compounds at different x values. The electronic properties were also calculated under hydrostatic pressure for (P=0.00, 5.00, 10.0, 15.0, 20.0, 25.0 GPa) where it is found that the InP compound change from direct to indirect band gap at the pressure P≥7.80 GPa. Furthermore, the pressure effect on the dielectric function and the refractive index was carried out. Results obtained in our calculations present a good agreement with available theoretical reports and experimental data.

  1. First-Principle Study of the Structural, Electronic, and Optical Properties of Cubic InNxP1-x Ternary Alloys under Hydrostatic Pressure

    Science.gov (United States)

    Hattabi, I.; Abdiche, A.; Moussa, R.; Riane, R.; Hadji, K.; Soyalp, F.; Varshney, Dinesh; Syrotyuk, S. V.; Khenata, R.

    2016-09-01

    In this article, we present results of the first-principle study of the structural, electronic, and optical properties of the InN, InP binary compounds and their related ternary alloy InNxP1-x in the zinc-blend (ZB) phase within a nonrelativistic full potential linearised augmented plan wave (FP-LAPW) method using Wien2k code based on the density functional theory (DFT). Different approximations of exchange-correlation energy were used for the calculation of the lattice constant, bulk modulus, and first-order pressure derivative of the bulk modulus. Whereas the lattice constant decreases with increasing nitride composition x. Our results present a good agreement with theoretical and experimental data. The electronic band structures calculated using Tran-Blaha-modified Becke-Johnson (TB-mBJ) approach present a direct band gap semiconductor character for InNxP1-x compounds at different x values. The electronic properties were also calculated under hydrostatic pressure for (P=0.00, 5.00, 10.0, 15.0, 20.0, 25.0 GPa) where it is found that the InP compound change from direct to indirect band gap at the pressure P≥7.80 GPa. Furthermore, the pressure effect on the dielectric function and the refractive index was carried out. Results obtained in our calculations present a good agreement with available theoretical reports and experimental data.

  2. Characterization of Ternary NiTiPd High-Temperature Shape-Memory Alloys under Load-Biased Thermal Cycling

    Science.gov (United States)

    Bigelow, Glen S.; Padula, Santo A.; Noebe, Ronald D.; Garg, Anita; Gaydosh, Darrell

    2010-01-01

    While NiTiPd alloys have been extensively studied for proposed use in high-temperature shape-memory applications, little is known about the shape-memory response of these materials under stress. Consequently, the isobaric thermal cyclic responses of five (Ni,Pd)49.5Ti50.5 alloys with constant stoichiometry and Pd contents ranging from 15 to 46 at. pct were investigated. From these tests, transformation temperatures, transformation strain (which is proportional to work output), and unrecovered strain per cycle (a measure of dimensional instability) were determined as a function of stress for each alloy. It was found that increasing the Pd content over this range resulted in a linear increase in transformation temperature, as expected. At a given stress level, work output decreased while the amount of unrecovered strain produced during each load-biased thermal cycle increased with increasing Pd content, during the initial thermal cycles. However, continued thermal cycling at constant stress resulted in a saturation of the work output and nearly eliminated further unrecovered strain under certain conditions, resulting in stable behavior amenable to many actuator applications.

  3. DX centers in III-V semiconductors under hydrostatic pressure

    International Nuclear Information System (INIS)

    Wolk, J.A.

    1992-11-01

    DX centers are deep level defects found in some III-V semiconductors. They have persistent photoconductivity and large difference between thermal and optical ionization energies. Hydrostatic pressure was used to study microstructure of these defects. A new local vibrational mode (LVM) was observed in hydrostatically stressed, Si-doped GaAs. Corresponding infrared absorption peak is distinct from the Si Ga shallow donor LVM peak, which is the only other LVM peak observed in our samples, and is assigned to the Si DX center. Analysis of the relative intensities of the Si DX LVM and the Si shallow donor LVM peaks, combined with Hall effect and resistivity indicate that the Si DX center is negatively charged. Frequency of this new mode provides clues to the structure of this defect. A pressure induced deep donor level in S-doped InP was also discovered which has the properties of a DX center. Pressure at which the new defect becomes more stable than the shallow donor is 82 kbar. Optical ionization energy and energy dependence of the optical absorption cross section was measured for this new effect. Capture barrier from the conduction band into the DX state were also determined. That DX centers can be formed in InP by pressure suggests that DX states should be common in n-type III-V semiconductors. A method is suggested for predicting under what conditions these defects will be the most stable form of the donor impurity

  4. A comparative evaluation between new ternary zirconium alloys as alternative metals for orthopedic and dental prosthetic devices.

    Science.gov (United States)

    Shyti, Genti; Rosalbino, Francesco; Macciò, Daniele; Scarabelli, Linda; Quarto, Rodolfo; Giannoni, Paolo

    2014-02-01

    We assessed in vitro the corrosion behavior and biocompatibility of four Zr-based alloys (Zr97.5 Nb1.5VM1.0  ; VM, valve metal: Ti, Mo, W, Ta; at%) to be used as implant materials, comparing the results with grade-2 titanium, a biocompatible metal standard. Corrosion resistance was investigated by open circuit potential and electrochemical impedance spectroscopy measurements as a function of exposure time to an artificial physiological environment (Ringer's solution). Human bone marrow stromal cells were used to evaluate biocompatibility of the alloys and their influence on growth kinetics and cell osteogenic differentiation through histochemical and gene expression analyses. Open circuit potential values indicated that Zr-based alloys and grade-2 Ti undergo spontaneous passivation in the simulated aggressive environment. High impedance values for all samples demonstrated improved corrosion resistance of the oxide film, with the best protection characteristics displayed by Zr97.5  Nb1.5Ta1.0. Cells seeded on all surfaces showed the same growth kinetics, although matrix mineralization and alkaline phosphatase activity were maximal on Zr97.5  Nb1.5Mo1.0 and Zr97.5   Nb1.5Ta1.0. Markers of ongoing proliferation, however, such as podocalyxin and CD49f, were still overexpressed on Zr97.5   Nb1.5   Mo1.0 even upon osteoinduction. No relevant effects were noted for the CD146-expressing population of bone progenitors. Nonetheless, the presence of a more differentiated cell population on Zr97.5Nb1.5Ta1.0 samples was inferable by comparing mineralization data and transcript levels of osteogenic markers (osteocalcin, osteopontin, bone sialoprotein, and RUNX2). The combination of passivation, corrosion resistance and satisfactory biotolerance to bone progenitors make the Zr-based alloys promising implant materials. Among those we tested, Zr97.5Nb1.5Ta1.0 seems to be the most appealing.

  5. Fast optical in situ spectroscopy in III-V MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Kaspari, C.

    2007-09-29

    This work describes the application of optical in situ measurement techniques (reflectance anisotropy spectroscopy, RAS, and spectroscopic ellipsometry, SE) to processes that are important for the growth of III-V semiconductors like GaAs, InP, InAs and GaP in metal-organic vapour phase epitaxy (MOVPE). Special emphasis is placed on the determination of the free carrier concentration (doping level) and the study of the thermal desorption properties of III-V oxides. A large part of this work is concerned with the development and the construction of a multichannel RAS setup that allows the recording of RAS spectra within fractions of a second. On the basis of benchmark measurements it was shown that the spectral resolution is sufficiently accurate for application in epitaxy. To demonstrate the recording of spectra with high temporal resolution, RAS monolayer oscillations during growth of GaAs were studied and it was shown that the surface changes periodically between a relatively smooth morphology with adsorbed methyl groups (type III) and a stepped, gallium-rich surface (type II). Furthermore the non-reversible process of growing InAs quantum dots on GaAs was studied. It was shown that the multichannel RAS is capable of detecting the 2D-3D transition as well as the following morphological change of the surface at high temporal resolution. For the measurement of the doping level, the relationship between the doping-induced internal electric field and the anisotropy of the sample was studied. To understand the effect of the so-called doping oscillations, a theoretical model was developed. For the investigation of the thermal desorption of the III-V oxides in MOVPE, a number of test series were realised. It was also found that the formation of the reconstructed surface is finished a considerable time after the SE transient indicates stable conditions (no further reduction of the oxide layer). The activation energy for oxide desorption from InAs, GaAs and InP was

  6. Ternary fission

    International Nuclear Information System (INIS)

    Wagemans, C.

    1991-01-01

    Since its discovery in 1946, light (charged) particle accompanied fission (ternary fission) has been extensively studied, for spontaneous as well as for induced fission reactions. The reason for this interest was twofold: the ternary particles being emitted in space and time close to the scission point were expected to supply information on the scission point configuration and the ternary fission process was an important source of helium, tritium, and hydrogen production in nuclear reactors, for which data were requested by the nuclear industry. Significant experimental progress has been realized with the advent of high-resolution detectors, powerful multiparameter data acquisition systems, and intense neutron and photon beams. As far as theory is concerned, the trajectory calculations (in which scission point parameters are deduced from the experimental observations) have been very much improved. An attempt was made to explain ternary particle emission in terms of a Plateau-Rayleigh hydrodynamical instability of a relatively long cylindrical neck or cylindrical nucleus. New results have also been obtained on the so-called open-quotes trueclose quotes ternary fission (fission in three about-equal fragments). The spontaneous emission of charged particles has also clearly been demonstrated in recent years. This chapter discusses the main characteristics of ternary fission, theoretical models, light particle emission probabilities, the dependence of the emission probabilities on experimental variables, light particle energy distributions, light particle angular distributions, correlations between light particle accompanied fission observables, open-quotes trueclose quotes ternary fission, and spontaneous emission of heavy ions. 143 refs., 18 figs., 8 tabs

  7. Electronic bands and excited states of III-V semiconductor polytypes with screened-exchange density functional calculations

    Energy Technology Data Exchange (ETDEWEB)

    Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori [Department of Physics Engineering, Mie University, 1577 Kurima-Machiya, Tsu 514-8507 (Japan); Freeman, Arthur J. [Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States)

    2014-03-31

    The electronic band structures and excited states of III-V semiconductors such as GaP, AlP, AlAs, and AlSb for various polytypes are determined employing the screened-exchange density functional calculations implemented in the full-potential linearized augmented plane-wave methods. We demonstrate that GaP and AlSb in the wurtzite (WZ) structure have direct gap while III-V semiconductors in the zinc blende, 4H, and 6H structures considered in this study exhibit an indirect gap. Furthermore, we find that inclusion of Al atoms less than 17% and 83% in the hexagonal Al{sub x}Ga{sub 1−x}P and Al{sub x}Ga{sub 1−x}As alloys, respectively, leads to a direct transition with a gap energy of ∼2.3 eV. The feasibility of III-V semiconductors with a direct gap in WZ structure offers a possible crystal structure engineering to tune the optical properties of semiconductor materials.

  8. Organic / IV, III-V Semiconductor Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Pang-Leen Ong

    2010-03-01

    Full Text Available We present a review of the emerging class of hybrid solar cells based on organic-semiconductor (Group IV, III-V, nanocomposites, which states separately from dye synthesized, polymer-metal oxides and organic-inorganic (Group II-VI nanocomposite photovoltaics. The structure of such hybrid cell comprises of an organic active material (p-type deposited by coating, printing or spraying technique on the surface of bulk or nanostructured semiconductor (n-type forming a heterojunction between the two materials. Organic components include various photosensitive monomers (e.g., phtalocyanines or porphyrines, conjugated polymers, and carbon nanotubes. Mechanisms of the charge separation at the interface and their transport are discussed. Also, perspectives on the future development of such hybrid cells and comparative analysis with other classes of photovoltaics of third generation are presented.

  9. Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

    Science.gov (United States)

    Razeghi, M.

    2003-09-01

    The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3 5 μm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

  10. First-principles study of the nucleation and stability of ordered precipitates in ternary Al-Sc-Li alloys

    International Nuclear Information System (INIS)

    Mao, Z.; Chen, W.; Seidman, D.N.; Wolverton, C.

    2011-01-01

    First-principles density functional calculations are used to study the nucleation and stability of L1 2 -ordered precipitates in Al-Sc-Li alloys. For dilute Al alloys, there are three possible ordered L1 2 precipitates: Al 3 Sc, Al 3 Li and an Al 3 Sc/Al 3 Li core/shell structure. To calculate the nucleation behavior, information about bulk thermodynamics (both static total energies and vibrational free energies), interfacial energetics and coherency strain is required. The study finds the following: (1) the coherency strain energies for forming coherent interfaces between Al/Al 3 Sc, Al/Al 3 Li and Al 3 Sc/Al 3 Li are relatively small, owing to the small atomic size mismatches in these systems; (2) the sublattice site preferences of Sc and Li are calculated, and it is demonstrated that Sc and Li share the same sublattice sites in both Al 3 Sc(L1 2 ) and Al 3 Li(L1 2 ), in agreement with recent experimental results; (3) the calculated solubilities of Sc and Li in α-Al alloys are in good agreement with experimental values and, for Sc, agree well with prior first-principles results; (4) the interfacial energies for Al/Al 3 Sc, Al/Al 3 Li and Al 3 Sc/Al 3 Li for (1 0 0), (1 1 0) and (1 1 1) interfaces are calculated: the values of the Al/Al 3 Sc interfacial energies are significantly larger than those of the Al/Al 3 Li and Al 3 Sc/Al 3 Li interfaces; (5) combining the bulk and interfacial energies yields the nucleation barriers and critical radii for Al 3 Sc and Al 3 Li precipitates; and (6) the energetic stability of the Al 3 Sc/Al 3 Li core/shell structure is compared with individual Al 3 Sc and Al 3 Li nuclei, and the range of precipitate sizes for which the core/shell structure is energetically favored is determined quantitatively.

  11. Investigations into the corrosion resistance of copper aluminium alloys. Effect of phosphorus as corrosion resistant third alloying element in the ternary system CuAl20P1

    International Nuclear Information System (INIS)

    Allwardt, A.

    1997-01-01

    The effect of phosphorus on the corrosion resistance of Al-bronzes is studied in detail in this work. A literature review showed that there are a lot of things known about the microstructure and the mechanical properties of Al-bronzes. In spite of their corrosion resistance the corrosion properties and the structure of the protective oxide films of Al-bronzes were seldom a matter of interest. Systematic studies of the influence of different alloying elements on the oxide film and the corrosion properties are rare. Therefore, it is not possible to predict the corrosion resistance of Al-bronzes, made by alloying particular elements. The high corrosion resistance of the new alloy CuAl 20 P 1 was the reason to investigate the influence of phosphorus on the corrosion properties of Al-bronzes in more detail. A systematic study of the microstructure and the corrosion properties of Cu, CuP x , CuAl 20 and CuAl 20 P x offers an insight into the effect of aluminium and phosphorus on the formation of the oxide film on Al-bronzes. It was found that there exists a critical amount of 1 at.-% of phosphorus. Above and below this amount the corrosion resistance becomes worse. This behaviour could be explained by XPS-and electrochemical measurements. Although there are still some questions about the influence of phosphorus on the corrosion resistance of Al-bronzes, this work has produced some important results, which in the future may be helpful to develop new high corrosion resistant Al-bronzes more efficiently: - on clean surface Al-bronze, the oxidation of Al and Cu takes place simultaneously, - Al promotes the formation of Cu 2 O but impedes the formation of Cu(II)-oxide/-hydride in neutral solutions, - P impedes the formation of Cu 2 O and as a consequence promotes the formation of aluminium oxide. This results in a higher amount of Al in the oxide film on the surface of the alloy, which leads to a better corrosion resistance. (author) figs., tabs., 106 refs

  12. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  13. III - V semiconductor structures for biosensor and molecular electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Luber, S.M.

    2007-01-15

    The present work reports on the employment of III-V semiconductor structures to biosensor and molecular electronics applications. In the first part a sensor based on a surface-near two dimensional electron gas for a use in biological environment is studied. Such a two dimensional electron gas inherently forms in a molecular beam epitaxy (MBE) grown, doped aluminum gallium arsenide - gallium arsenide (AlGaAs-GaAs) heterostructure. Due to the intrinsic instability of GaAs in aqueous solutions the device is passivated by deposition of a monolayer of 4'-substituted mercaptobiphenyl molecules. The influence of these molecules which bind to the GaAs via a sulfur group is investigated by Kelvin probe measurements in air. They reveal a dependence of GaAs electron affinity on the intrinsic molecular dipole moment of the mercaptobiphenyls. Furthermore, transient surface photovoltage measurements are presented which demonstrate an additional influence of mercaptobiphenyl chemisorption on surface carrier recombination rates. As a next step, the influence of pH-value and salt concentration upon the sensor device is discussed based on the results obtained from sensor conductance measurements in physiological solutions. A dependence of the device surface potential on both parameters due to surface charging is deduced. Model calculations applying Poisson-Boltzmann theory reveal as possible surface charging mechanisms either the adsorption of OH- ions on the surface, or the dissociation of OH groups in surface oxides. A comparison between simulation settings and physical device properties indicate the OH- adsorption as the most probable mechanism. In the second part of the present study the suitability of MBE grown III-V semiconductor structures for molecular electronics applications is examined. In doing so, a method to fabricate nanometer separated, coplanar, metallic electrodes based on the cleavage of a supporting AlGaAs-GaAs heterostructure is presented. This is followed

  14. Antisites in III-V semiconductors: Density functional theory calculations

    Energy Technology Data Exchange (ETDEWEB)

    Chroneos, A., E-mail: alex.chroneos@open.ac.uk [Engineering and Innovation, The Open University, Milton Keynes MK7 6AA (United Kingdom); Tahini, H. A. [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Schwingenschlögl, U., E-mail: udo.schwingenschlogl@kaust.edu.sa [PSE Division, KAUST, Thuwal 23955-6900 (Saudi Arabia); Grimes, R. W., E-mail: r.grimes@imperial.ac.uk [Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

    2014-07-14

    Density functional based simulation, corrected for finite size effects, is used to investigate systematically the formation of antisite defects in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb). Different charge states are modelled as a function of the Fermi level and under different growth conditions. The formation energies of group III antisites (III{sub V}{sup q}) decrease with increasing covalent radius of the group V atom though not group III radius, whereas group V antisites (V{sub III}{sup q}) show a consistent decrease in formation energies with increase in group III and group V covalent radii. In general, III{sub V}{sup q} defects dominate under III-rich conditions and V{sub III}{sup q} under V-rich conditions. Comparison with equivalent vacancy formation energy simulations shows that while antisite concentrations are always dominant under stoichiometric conditions, modest variation in growth or doping conditions can lead to a significantly higher concentration of vacancies.

  15. Coherent and ultrafast optoelectronics in III-V semiconductor compounds

    Energy Technology Data Exchange (ETDEWEB)

    Foerst, M.; Nagel, M.; Awad, M.; Waechter, M.; Kurz, H. [Institut fuer Halbleitertechnik, RWTH Aachen University, 52074 Aachen (Germany); Dekorsy, T. [Universitaet Konstanz, Fachbereich Physik, 78457 Konstanz (Germany)

    2007-08-15

    III-V compound semiconductors offer a fascinating multitude of phenomena which have become accessible via ultrafast time-resolved spectroscopy. Coherent vibronic and electronic dynamics are prepared by excitation with taylored femtosecond laser pulses. The analysis of their temporal dephasing or decay provides deep insights into the interaction between electronic and vibronic degrees of freedom and the surrounding bath in high purity quantum structures. In contrast to coherent electronic or vibronic states, deliberately introduced growth defects can be used to drastically shorten the lifetime of optically excited carriers. Sub-picosecond carrier lifetimes open the possibility to realize ultrafast saturable absorbers and optoelectronic transducer elements. They are particularly important as key elements in THz technology, such as efficient THz emitters, detectors, and for on-chip THz technology. This paper summarizes the most distinguished results relevant in the context of ultrafast optoelectronics and THz technology obtained in close collaboration with the Paul-Drude-Institute Berlin over the past decade. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Thermal conductivity of III-V semiconductor superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Mei, S., E-mail: song.mei@wisc.edu; Knezevic, I., E-mail: irena.knezevic@wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-11-07

    This paper presents a semiclassical model for the anisotropic thermal transport in III-V semiconductor superlattices (SLs). An effective interface rms roughness is the only adjustable parameter. Thermal transport inside a layer is described by the Boltzmann transport equation in the relaxation time approximation and is affected by the relevant scattering mechanisms (three-phonon, mass-difference, and dopant and electron scattering of phonons), as well as by diffuse scattering from the interfaces captured via an effective interface scattering rate. The in-plane thermal conductivity is obtained from the layer conductivities connected in parallel. The cross-plane thermal conductivity is calculated from the layer thermal conductivities in series with one another and with thermal boundary resistances (TBRs) associated with each interface; the TBRs dominate cross-plane transport. The TBR of each interface is calculated from the transmission coefficient obtained by interpolating between the acoustic mismatch model (AMM) and the diffuse mismatch model (DMM), where the weight of the AMM transmission coefficient is the same wavelength-dependent specularity parameter related to the effective interface rms roughness that is commonly used to describe diffuse interface scattering. The model is applied to multiple III-arsenide superlattices, and the results are in very good agreement with experimental findings. The method is both simple and accurate, easy to implement, and applicable to complicated SL systems, such as the active regions of quantum cascade lasers. It is also valid for other SL material systems with high-quality interfaces and predominantly incoherent phonon transport.

  17. Wide bandgap collector III-V double heterojunction bipolar transistors

    International Nuclear Information System (INIS)

    Flitcroft, R.M.

    2000-10-01

    This thesis is devoted to the study and development of Heterojunction Bipolar Transistors (HBTs) designed for high voltage operation. The work concentrates on the use of wide bandgap III-V semiconductor materials as the collector material and their associated properties influencing breakdown, such as impact ionisation coefficients. The work deals with issues related to incorporating a wide bandgap collector into double heterojunction structures such as conduction band discontinuities at the base-collector junction and results are presented which detail, a number of methods designed to eliminate the effects of such discontinuities. In particular the use of AlGaAs as the base material has been successful in eliminating the conduction band spike at this interface. A method of electrically injecting electrons into the collector has been employed to investigate impact ionisation in GaAs, GaInP and AlInP which has used the intrinsic gain of the devices to extract impact ionisation coefficients over a range of electric fields beyond the scope of conventional optical injection techniques. This data has enabled the study of ''dead space'' effects in HBT collectors and have been used to develop an analytical model of impact ionisation which has been incorporated into an existing Ebers-Moll HBT simulator. This simulator has been shown to accurately reproduce current-voltage characteristics in both the devices used in this work and for external clients. (author)

  18. Static and dynamical properties of II-VI and III-V group binary solids

    International Nuclear Information System (INIS)

    Yadav, D S; Singh, D V

    2012-01-01

    In this paper, we extend to II-VI and III-V group binary solids of zinc blende (ZB) structure with conduction d-electrons the calculation of static and dynamical properties such as bulk modulus (B) and cohesive energy or total energy (E coh ) using the plasma oscillation theory of solids formalism already employed for ternary chalcopyrite semiconductors. The present method is not limited to tetrahedrally coordinated semiconductors and ternary chalcopyrites, but can be used for all semiconducting compounds. We have applied an extended formula on ZB structured binary semiconductors and found better agreement with the experimental data as compared to the values evaluated by previous researchers. The bulk modulus and cohesive energy of ZB-type structure compounds exhibit a linear relationship when plotted on a log-log scale against the plasmon energy ℎω p (in eV), but fall on a straight line. The results for bulk modulus differ from experimental values by the following amounts: ZnS 0.36%, ZnSe 10%, ZnTe 0.62%, CdS 1.8%, CdSe 7.4% and CdTe 1.6%, AlP 2.6%, AlAs 5.3%, AlSb 4.0%, GaP 0%, AlAs 0%, AlS 4.4%, InP 0%, InAs 0% and InSb 2.1%; and the results for cohesive energy differ from experimental values by the following amounts: ZnS 0.16%, ZnSe 0.73%, ZnTe 0.6%, CdS 7.6%, CdSe 3.5%, CdTe 2.5%, AlP 2.0%, AlAs 3.0%, AlSb 11.1%, GaP 14.6%, AlAs 17.0%, AlSb 8.7%, InP 4.3%, InAs 5.5% and InSb 0.6%.

  19. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

    Science.gov (United States)

    Xu, Tao; Dick, Kimberly A.; Plissard, Sébastien; Hai Nguyen, Thanh; Makoudi, Younes; Berthe, Maxime; Nys, Jean-Philippe; Wallart, Xavier; Grandidier, Bruno; Caroff, Philippe

    2012-03-01

    III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs1-xSbx nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs1-xSbx heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

  20. Ultrabroadband Hybrid III-V/SOI Grating Reflector for On-chip Lasers

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Taghizadeh, Alireza; Chung, Il-Sug

    2016-01-01

    We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability.......We report on a new type of III-V/SOI grating reflector with a broad stopband of 350 nm. This reflector has promising prospects for applications in high-speed III-V/SOI vertical cavity lasers with an improved heat dissipation capability....

  1. Monolithic integration of III-V nanostructures for electronic and photonic applications

    Science.gov (United States)

    Mayer, B.; Wirths, S.; Schmid, H.; Mauthe, S.; Convertino, C.; Baumgartner, Y.; Czornomaz, L.; Sousa, M.; Riel, H.; Moselund, K. E.

    2017-08-01

    We have recently developed a novel III-V integration scheme, where III-V material is grown directly on top of Si within oxide nanotubes or microcavities which control the geometry of nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more flexibility in tuning of composition. In this talk, applications for electronic devices such as heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be discussed along with an outlook for the future.

  2. Study of the interactions between irradiation and chemical order effects in ternary alloys Ni-Cr-Fe; Etude des interactions entre effets d`irradiation et effets d`ordre chimique dans les alliages ternaires Ni-Cr-Fe

    Energy Technology Data Exchange (ETDEWEB)

    Frely, E

    1997-12-31

    Because of its resistance to corrosion even under stress, the alloy 69 (nickel-based alloy with a chemically disordered F.c.c. structure) is a promising material for application in some of the inner parts of nuclear reactor. However, the eventual formation of an ordered NI{sub 2}Cr superstructure under irradiation or thermal ageing might diminish its performances. We have studied the binary model alloy Ni-Cr33at.% as well as the ternary alloys Ni-Cr3at.%-Fe5cat.% and Ni-Cr32at.%-Fe10at.%, the last one having a chemical composition similar to that of the industrial alloy. After irradiation experiments with 2.5 MeV electrons in the 300-500 deg C temperature range, all the model alloys show the Ni{sub 2}Cr superstructure. The samples irradiated at fluences between 2 and 8. 10 d.p.a. have been characterized by X-ray and neutron diffraction. The superlattice reflexions and the ordered domains have been observed by electron microscopy. The critical temperature of the order-disorder transformation, measured under 1 MeV electron irradiation, decreases linearly with iron content. The evolution of the chemical corder has been traced by means of in situ resistivity measurements. We have used the pair exchange based Dienes model of ordering kinetics for studying the long range order S (S between 0.5 and 0.8 after irradiation). The iron seems to remain in disorder in the sublattices. The similarity of the results under thermal ageing and under irradiation shows that the main effect of the electronic irradiation is to accelerate ordering. Under both treatments increasing the iron content or the dislocation density reduce the ordering kinetics. However, this effect is not sufficient to explain the lack of order in alloy 690 after a fluence of 1 d.p.a. (author). 95 refs.

  3. First principle calculations of structural, electronic, thermodynamic and optical properties of Pb(1-x)Ca(x)S,Pb(1-x)Ca(x)Se and Pb(1-x)Ca(x)Te ternary alloys.

    Science.gov (United States)

    Sifi, C; Meradji, H; Slimani, M; Labidi, S; Ghemid, S; Hanneche, E B; El Haj Hassan, F

    2009-05-13

    Using first principles total energy calculations within the full potential linearized augmented plane wave (FP-LAPW) method, we have investigated the structural, electronic, thermodynamic and optical properties of Pb(1-x)Ca(x)S, Pb(1-x)Ca(x)Se and Pb(1-x)Ca(x)Te ternary alloys. The effect of composition on lattice parameter, bulk modulus, band gap, refractive index and dielectric function was investigated. Deviations of the lattice constants from Vegard's law and the bulk modulus from linear concentration dependence were observed for the three alloys. Using the approach of Zunger and co-workers, the microscopic origins of band gap bowing have been detailed and explained. The disorder parameter (gap bowing) was found to be mainly caused by the chemical charge transfer effect. On the other hand, the thermodynamic stability of these alloys was investigated by calculating the excess enthalpy of mixing, ΔH(m), as well as the phase diagram. It was shown that all of these alloys are stable at low temperature. The calculated refractive indices and optical dielectric constants were found to vary nonlinearly with Ca composition.

  4. Microstructural characterization and phase transformation of ternary alloys near at Al{sub 3}Ti compound; Caracterizacion microestructural y transformaciones de fase de aleaciones ternareas cercanas al compuesto Al{sub 3}Ti

    Energy Technology Data Exchange (ETDEWEB)

    Angeles Ch, C. [Instituto Nacional de Investigaciones Nucleares. Depto.de Sintesis y Caracterizacion de Materiales. Carretera Mexico-Toluca Km. 36.5 C.P. 52045, Ocoyoacac, Edo. de Mexico (Mexico)

    1999-07-01

    This research work is related with the structural characteristic and compositional values of the crystalline phases, which are found in ternary alloys of Ti-Al-Fe and TI-Al-Cu. These types of alloys were obtained using a rapid solidification technique (10{sup 3}-10{sup 4} K/s) and pure elements such as Al, Ti, Fe and Cu (99.99%). These cooling velocities allow the formation of stable phases and small grain sizes (approximately in range of a few micras). The obtained results indicate the presence of Al{sub 3}Ti and others phases of L1{sub 2} type. These phases are commonly found in a matrix rich in A1. The microalloyed elements (Cu and Fe) substitute the aluminum in both kinds of phases. Alloys with low content of Cu show transition states from the tetragonal structure DO{sub 22} to the cubic phases L1{sub 2}. The structural characteristics of the alloys are related with some microhardness measurement. The results show that the presence of the L1{sub 2} phase tends to increase to hardness depending of the content of this phase.

  5. Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

    Energy Technology Data Exchange (ETDEWEB)

    Hermle, Martin

    2008-11-27

    This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

  6. Growth and characterization of manganese doped III-V heterostructures; Herstellung und Charakterisierung von Mangan dotierten III-V Halbleiterheterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Wurstbauer, Ursula

    2008-04-15

    Subject of this thesis is the growth of III-V heterostructures doped with manganese by means of molecular beam epitaxy (MBE). The characterization was done primarily by magnetotransport measurements in the temperature range from 300 K to 20 mK and fields up to 19 T. Two different kind of Mn doped materials, ferromagnetic GaMnAs layers and Mn modulation doped magnetic two dimensional hole systems were studied. The first part focuses on the enhancement of the electric and magnetic properties of ferromagnetic properties and the integration of GaMnAs layers in more sophisticated heterostructures. Therefore, the crystal quality and the influence of the buffer layer beneath the magnetic layer are crucial. The MBE-growth of ferromagnetic GaMnAs layers on (001), (311)A and (311)A was successfully achieved with present values of the Curie-temperature (TC). Additionally, the growth of ferromagnetic GaMnAs layers on nonpolar (110) substrates and on cleaved [110] edges was established. An application of the latter was the investigation of magnetic bipolar junctions. Magnetic two dimensional hole gases (M2DHG) has been realized by the use of In0.75Al0.25As/In0.75Ga0.25As/InAs quantum well (QW) structures. It is necessary to grow a buffer layer for strain relaxation due to the lattice mismatch by gradually increasing the In mole fraction. Magnetotransport measurements were carried out on Si doped two-dimensional electron gases (2DEG) and on Mn doped M2DHGs. From magnetotransport measurements on the M2DHGs we see some interesting features, in particular in the mK region. From the 2DEGs and all non inverted doped M2DEGs weak localization and weak antilocalization effects can be observed in the low field region. Whereas all M2DHGs with an inverted doping layer show strong localization effects and a metal insulator transition dependent on the applied magnetic field perpendicular to the QW. In the high field region Shubnikov-de-Haas oscillations in the longitudinal resistance and

  7. Growth far from equilibrium: Examples from III-V semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kuech, Thomas F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Babcock, Susan E. [Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Mawst, Luke [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2016-12-15

    The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs{sub 1−y}Bi{sub y} system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

  8. Calculation of ternary interdiffusion coefficients using a single diffusion couple

    Czech Academy of Sciences Publication Activity Database

    Čermák, Jiří; Rothová, Věra

    2016-01-01

    Roč. 54, č. 5 (2016), s. 305-314 ISSN 0023-432X R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : diffusion * interdiffusion * ternary alloys * ternary diffusion coefficients Subject RIV: BJ - Thermodynamic s Impact factor: 0.366, year: 2016

  9. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

    Science.gov (United States)

    Geum, Dae-Myeong; Park, Min-Su; Lim, Ju Young; Yang, Hyun-Duk; Song, Jin Dong; Kim, Chang Zoo; Yoon, Euijoon; Kim, Sanghyeon; Choi, Won Jun

    2016-02-01

    Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

  10. Modeling, Growth and Characterization of III-V and Dilute Nitride Antimonide Materials and Solar Cells

    Science.gov (United States)

    Maros, Aymeric

    III-V multijunction solar cells have demonstrated record efficiencies with the best device currently at 46 % under concentration. Dilute nitride materials such as GaInNAsSb have been identified as a prime choice for the development of high efficiency, monolithic and lattice-matched multijunction solar cells as they can be lattice-matched to both GaAs and Ge substrates. These types of cells have demonstrated efficiencies of 44% for terrestrial concentrators, and with their upright configuration, they are a direct drop-in product for today's space and concentrator solar panels. The work presented in this dissertation has focused on the development of relatively novel dilute nitride antimonide (GaNAsSb) materials and solar cells using plasma-assisted molecular beam epitaxy, along with the modeling and characterization of single- and multijunction solar cells. Nitrogen-free ternary compounds such as GaInAs and GaAsSb were investigated first in order to understand their structural and optical properties prior to introducing nitrogen. The formation of extended defects and the resulting strain relaxation in these lattice-mismatched materials is investigated through extensive structural characterization. Temperature- and power-dependent photoluminescence revealed an inhomogeneous distribution of Sb in GaAsSb films, leading to carrier localization effects at low temperatures. Tuning of the growth parameters was shown to suppress these Sb-induced localized states. The introduction of nitrogen was then considered and the growth process was optimized to obtain high quality GaNAsSb films lattice-matched to GaAs. Near 1-eV single-junction GaNAsSb solar cells were produced. The best devices used a p-n heterojunction configuration and demonstrated a current density of 20.8 mA/cm2, a fill factor of 64 % and an open-circuit voltage of 0.39 V, corresponding to a bandgap-voltage offset of 0.57 V, comparable with the state-of-the-art for this type of solar cells. Post-growth annealing

  11. Methods for enhancing P-type doping in III-V semiconductor films

    Science.gov (United States)

    Liu, Feng; Stringfellow, Gerald; Zhu, Junyi

    2017-08-01

    Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.

  12. A comparison of the merits of isotopic substitution in neutron small-angle scattering and anomalous X-ray scattering for the evaluation of partial structure functions in a ternary alloy

    International Nuclear Information System (INIS)

    Simon, J.P.; Grenoble-1 Univ., 38; Lyon, O.; Paris-11 Univ., 91 - Orsay; Fontaine, D. de

    1985-01-01

    Solute partitioning during decomposition of a ternary alloy may be evaluated through the inversion of a system of linear equations, obtained by performing at least three independent small-angle scattering experiments. The merits of neutron scattering (with isotopic contrast) and of anomalous X-ray scattering (near the absorption edges) are compared. It appears that neutron scattering, although having good contrast, is not suited to these studies since slight structural differences between the three samples may lead to erroneous results. On the other hand, the use of the same sample in anomalous scattering avoids this problem, but with the drawback of a more ill-conditioned system. Nevertheless, the possibility of performing more than three anomalous experiments may improve the results and a new analysis of data is proposed. (orig.)

  13. High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

  14. III-V/Ge channel MOS device technologies in nano CMOS era

    Science.gov (United States)

    Takagi, Shinichi; Zhang, Rui; Suh, Junkyo; Kim, Sang-Hyeon; Yokoyama, Masafumi; Nishi, Koichi; Takenaka, Mitsuru

    2015-06-01

    CMOS utilizing high-mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high-performance and low power advanced LSIs in the future, because of its enhanced carrier transport properties. However, there are many critical issues and difficult challenges for realizing III-V/Ge-based CMOS on the Si platform such as (1) the formation of high-crystal-quality Ge/III-V films on Si substrates, (2) gate stack technologies to realize superior MOS/MIS interface quality, (3) the formation of a source/drain (S/D) with low resistivity and low leakage current, (4) process integration to realize ultrashort channel devices, and (5) total CMOS integration including Si CMOS. In this paper, we review the recent progress in III-V/Ge MOS devices and process technologies as viable approaches to solve the above critical problems on the basis of our recent research activities. The technologies include MOS gate stack formation, high-quality channel formation, low-resistance S/D formation, and CMOS integration. For the Ge device technologies, we focus on the gate stack technology and Ge channel formation on Si. Also, for the III-V MOS device technologies, we mainly address the gate stack technology, III-V channel formation on Si, the metal S/D technology, and implementation of these technologies into short-channel III-V-OI MOSFETs on Si substrates. On the basis of the present status of the achievements, we finally discuss the possibility of various CMOS structures using III-V/Ge channels.

  15. Superconducting state parameters of ternary metallic glasses

    Indian Academy of Sciences (India)

    Quadratic T C equations have been proposed and found successful. Also, the present findings are found to be in qualitative agreement with other such earlier reported data, which confirms the superconducting phase in the ternary superconductors. The pseudo-alloy-atom (PAA) model was applied for the first time instead of ...

  16. New World Vistas: Theory of Anion-Substituted Nitrogen Bearing III-V Alloys

    National Research Council Canada - National Science Library

    Schilfgaarde, Van

    1997-01-01

    .... Because of the large bond-length mismatch between nitrogen (N) and phosphorous (P) or arsenic (As), enormous internal strains strongly inhibit the miscibility of the latter into the anion lattice...

  17. InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform.

    Science.gov (United States)

    Park, Jin-Kown; Takagi, Shinichi; Takenaka, Mitsuru

    2018-02-19

    We demonstrated the monolithic integration of a carrier-injection InGaAsP Mach-Zehnder interferometer (MZI) optical modulator and InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) on a III-V-on-insulator (III-V-OI) wafer. A low-resistivity lateral PIN junction was formed along an InGaAsP rib waveguide by Zn diffusion and Ni-InGaAsP alloy, enabling direct driving of the InGaAsP optical modulator by the InGaAs MOSFET. A π phase shift of the InGaAsP optical modulator was obtained through the injection of a drain current from the InGaAs MOSFET with a gate voltage of approximately 1 V. This proof-of-concept demonstration of the monolithic integration of the InGaAsP optical modulator and InGaAs driver MOSFET will enable us to develop high-performance and low-power electronic-photonic integrated circuits on a III-V CMOS photonics platform.

  18. Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-10-01

    We report on the recent progress in electronic applications using III-V nanowires (NWs) on Si substrates using the selective-area growth method. This method could align vertical III-V NWs on Si under specific growth conditions. Detailed studies of the III-V NW/Si heterointerface showed the possibility of achieving coherent growth regardless of misfit dislocations in the III-V/Si heterojunction. The vertical III-V NWs grown using selective-area growth were utilized for high performance vertical field-effect transistors (FETs). Furthermore, III-V NW/Si heterointerfaces with fewer misfit dislocations provided us with a unique band discontinuity with a new functionality that can be used for the application of tunnel diodes and tunnel FETs. These demonstrations could open the door to a new approach for creating low power switches using III-V NWs as building-blocks of future nanometre-scaled electronic circuits on Si platforms.

  19. III-V/Ge MOS device technologies for low power integrated systems

    Science.gov (United States)

    Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

    2016-11-01

    CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

  20. Electrical performance of III-V gate-all-around nanowire transistors

    Science.gov (United States)

    Razavi, Pedram; Fagas, Giorgos

    2013-08-01

    The performance of III-V inversion-mode and junctionless nanowire field-effect transistors are investigated using quantum simulations and are compared with those of silicon devices. We show that at ultrascaled dimensions silicon can offer better electrical performance in terms of short-channel effects and drive current than other materials. This is explained simply by suppression of source-drain tunneling due to the higher effective mass, shorter natural length, and the higher density of states in the confined channel. We also confirm that III-V junctionless nanowire transistors are more immune to short-channel effects than conventional inversion-mode III-V nanowire field-effect transistors.

  1. Informatics Aided Design for Alloys

    Science.gov (United States)

    2009-02-28

    alloying discoveries/ predictions of new ternary cobalt based alloys that can have improved properties from conventional nickel based superalloys ...Using this approach we have proposed new ternary alloy additions for binary cobalt based intermetallics. Through comparison with some recent...that are even better than nickel base superalloys . This strategy has also been extended to the development of new type of design maps that identify

  2. III-V/SOI vertical cavity laser structure for 120 Gbit/s speed

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Mørk, Jesper

    2015-01-01

    Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA.......Ultrashort-cavity structure for III-V/SOI vertical cavity laser with light output into a Si waveguide is proposed, enabling 17 fJ/bit efficiency or 120 Gbit/s speed. Experimentally, 27-GHz bandwidth is demonstrated at 3.5 times of threshold. © 2015 OSA....

  3. Monte-Carlo simulation of crystallographical pore growth in III-V-semiconductors

    International Nuclear Information System (INIS)

    Leisner, Malte; Carstensen, Juergen; Foell, Helmut

    2011-01-01

    The growth of crystallographical pores in III-V-semiconductors can be understood in the framework of a simple model, which is based on the assumption that the branching of pores is proportional to the current density at the pore tips. The stochastic nature of this model allows its implementation into a three-dimensional Monte-Carlo-simulation of pore growth. The simulation is able to reproduce the experimentally observed crysto pore structures in III-V-semiconductors in full quantitative detail. The different branching probabilities for different semiconductors, as well as doping levels, can be deduced from the specific passivation behavior of the semiconductor-electrolyte-interface at the pore tips.

  4. Reactivity and control of III-V surfaces for passivation and Schottky barrier formation

    International Nuclear Information System (INIS)

    Bruno, Giovanni

    2004-01-01

    The N-for-As, P-for-As and Sb-for-As anion exchange reactions at GaAs surfaces, and the N-for-P anion exchange reaction at the GaP surface have been investigated with the aim at the formation of a thin high-gap surface layer for passivation of GaAs and GaP. Among the investigated anion exchange reactions, the P-for-As results in the formation of a ternary alloys GaP y As 1-y not effective for GaAs passivation. The Sb-for-As anion exchange does not occur and results in segregation of Sb at the GaAs surface. The Sb overlayer is effective in the chemical passivation of GaAs. The N-for-As anion exchange by a remote N 2 -H 2 (a mixture of 97% N 2 -3% H 2 ) radiofrequency plasma nitridation procedure forms a very thin (∼5 Angst) GaN layer that is successful in the electronic and chemical passivation of GaAs(1 0 0) surfaces. The N 2 -H 2 (a mixture of 97% N 2 -3% H 2 ) nitridation has been found completely different from the pure N 2 nitridation which, in contrast, do not provide GaAs passivation, because the formation of Ga-N bonds accompanies with AsN and the segregation of elemental As at the GaN/GaAs interface. GaAs-GaN based Schottky structures have also been deposited and characterized by I-V measurements. A chemical and kinetic mechanism for the anion exchange reactions which takes into account also the competitive formation of PAs, AsN, and PN isoelectronic compounds is proposed

  5. Ternary Silver Halide Nanocrystals.

    Science.gov (United States)

    Abeyweera, Sasitha C; Rasamani, Kowsalya D; Sun, Yugang

    2017-07-18

    Nanocrystalline silver halides (AgX) such as AgCl, AgBr, and AgI, a class of semiconductor materials with characteristics of both direct and indirect band gaps, represent the most crucial components in traditional photographic processing. The nanocrystal surfaces provide sensitivity specks that can turn into metallic silver, forming an invisible latent image, upon exposure to light. The photographic processing implies that the AgX nanoparticles possess unique properties. First, pristine AgX nanoparticles absorb light only at low efficiency to convert surface AgX into tiny clusters of silver atoms. Second, AgX nanoparticles represent an excellent class of materials to capture electrons efficiently. Third, small metallic silver clusters can catalyze the reduction of AgX nanoparticles to Ag nanoparticles in the presence of mild reducing reagents, known as self-catalytic reduction. These properties indicate that AgX nanoparticles can be partially converted to metallic silver with high precision, leading to the formation of hybrid AgX/Ag nanoparticles. The nanosized metallic Ag usually exhibit intense absorption bands in the visible spectral region due to their strong surface plasmon resonances, which make the AgX/Ag nanoparticles a class of promising visible-light-driven photocatalysts for environmental remediation and CO 2 reduction. Despite the less attention paid to their ability of capturing electrons, AgX nanoparticles might be a class of ideal electron shuttle materials to bridge light absorbers and catalysts on which electrons can drive chemical transformations. In this Account, we focus on ternary silver halide alloy (TSHA) nanoparticles, containing two types of halide ions, which increase the composition complexity of the silver halide nanoparticles. Interdiffusion of halide ions between two types of AgX at elevated temperatures has been developed for fabricating ternary silver halide alloy crystals, such as silver chlorobromide optical fibers for infrared

  6. Magnetization of ternary alloys based on Fe0.65Ni0.35 invar with 3d transition metal additions: An ab initio study

    Science.gov (United States)

    Onoue, Masatoshi; Trimarchi, Giancarlo; Freeman, Arthur J.; Popescu, Voicu; Matsen, Marc R.

    2015-01-01

    Smart susceptors are being developed for use as tooling surfaces in molding machines that use apply electro-magnetic induction heating to mold and form plastics or metal powders into structural parts, e.g., on aerospace and automotive manufacturing lines. The optimal magnetic materials for the induction heating process should have large magnetization, high magnetic permeability, but also small thermal expansion coefficient. The Fe0.65Ni0.35 invar alloy with its negligible thermal expansion coefficient is thus a natural choice for this application. Here, we use density functional theory as implemented through the Korringa-Kohn-Rostoker method within the coherent-potential approximation, to design new alloys with the large magnetization desired for smart susceptor applications. We consider the Fe0.65-xNi0.35-yMx+y alloys derived from Fe0.65Ni0.35 invar adding a third element M = Sc, Ti, V, Cr, Mn, or Co with concentration (x + y) reaching up to 5 at. %. We find that the total magnetization depends linearly on the concentration of M. Specifically, the early 3d transition metals from Sc to Cr decrease the magnetization with respect to that of the invar alloy whereas Mn and Co increase it.

  7. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  8. Generic technique to grow III-V semiconductor nanowires in a closed glass vessel

    Directory of Open Access Journals (Sweden)

    Kan Li

    2016-06-01

    Full Text Available Crystalline III-V semiconductor nanowires have great potential in fabrication of nanodevices for applications in nanoelectronics and optoelectronics, and for studies of novel physical phenomena. Sophisticated epitaxy techniques with precisely controlled growth conditions are often used to prepare high quality III-V nanowires. The growth process and cost of these experiments are therefore dedicated and very high. Here, we report a simple but generic method to synthesize III-V nanowires with high crystal quality. The technique employs a closed evacuated tube vessel with a small tube carrier containing a solid source of materials and another small tube carrier containing a growth substrate inside. The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. The as-grown nanowires are analyzed by SEM, TEM and Raman spectroscopy and the results show that the nanowires are high quality zincblende single crystals. No particular condition needs to be adjusted and controlled in the experiments. This technique provides a convenient way of synthesis of III-V semiconductor nanowires with high material quality for a wide range of applications.

  9. Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

    DEFF Research Database (Denmark)

    Kallesoe, C.; Mølhave, Kristian; Larsen, K. F.

    2010-01-01

    lithography is used for deposition of catalyst particles on trench sidewalls and the lateral growth of III-V nanowires is achieved from such catalysts. The selectivity of a bromine-based etch on gallium arsenide segments in gallium phosphide nanowires is examined, using a hydrochloride etch to remove the III...

  10. Photoelectrochemistry of III-V epitaxial layers and nanowires for solar energy conversion

    Science.gov (United States)

    Parameshwaran, Vijay; Enck, Ryan; Chung, Roy; Kelley, Stephen; Sampath, Anand; Reed, Meredith; Xu, Xiaoqing; Clemens, Bruce

    2017-05-01

    III-V materials, which exhibit high absorption coefficients and charge carrier mobility, are ideal templates for solar energy conversion applications. This work describes the photoelectrochemistry research in several IIIV/electrolyte junctions as an enabler for device design for solar chemical reactions. By designing lattice-matched epitaxial growth of InGaP and GaP on GaAs and Si, respectively, extended depletion region electrodes achieve photovoltages which provide an additional boost to the underlying substrate photovoltage. The InGaP/GaAs and GaP/Si electrodes drive hydrogen evolution currents under aqueous conditions. By using nanowires of InN and InP under carefully controlled growth conditions, current and capacitance measurements are obtained to reveal the nature of the nanowire-electrolyte interface and how light is translated into photocurrent for InP and a photovoltage in InN. The materials system is expanded into the III-V nitride semiconductors, in which it is shown that varying the morphology of GaN on silicon yields insights to how the interface and light conversion is modulated as a basis for future designs. Current extensions of this work address growth and tuning of the III-V nitride electrodes with doping and polarization engineering for efficient coupling to solar-driven chemical reactions, and rapid-throughput methods for III-V nanomaterials synthesis in this materials space.

  11. Synthesis, characterization and magnetic properties of nanocrystalline Fe{sub x}Ni{sub 80−x}Co{sub 20} ternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dalavi, Shankar B.; Theerthagiri, J. [Department of Chemistry, Birla Institute of Technology and Science, Pilani, K.K.Birla, Goa Campus, Zuari Nagar, Goa-403726 (India); Raja, M.Manivel [Defence Metallurgical Research Laboratory, Hyderabad-500058 (India); Panda, R.N., E-mail: rnp@goa.bits-pilani.ac.in [Department of Chemistry, Birla Institute of Technology and Science, Pilani, K.K.Birla, Goa Campus, Zuari Nagar, Goa-403726 (India)

    2013-10-15

    Fe–Ni–Co alloys of various compositions (Fe{sub x}Ni{sub 80−x}Co{sub 20,}x=20–50) were synthesized by using a sodium borohydride reduction route. The phase purity and crystallite size was ascertained by using powder X-ray diffraction (XRD). The alloys crystallize in the face centered cubic (fcc) structure with lattice parameters, a=3.546–3.558 Å. The XRD line broadening indicates the fine particle nature of the materials. The estimated crystallite sizes were found to be 27.5, 27, 24, and 22.8 nm for x=20, 30, 40, and 50; alloys respectively. Scanning electron micrograph studies indicates particle sizes to be in the range of 83–60 nm for Fe–Ni–Co alloys. The values of saturation magnetization for Fe{sub x}Ni{sub 80−x}Co{sub 20} are found to be in the range of 54.3–41.2 emu/g and are significantly lower than the bulk values (175–180 emu/g). The coercivity decreases from 170 to 122 Oe with decrease in Fe content. The observed magnetic behavior has been explained on the basis of size, surface effects, spin canting and the presence of superparamagnetic fractions in the ultrafine materials. - Highlights: • Nanocrystalline Fe{sub x}Ni{sub 80−x}Co{sub 20}, x=20, 30, 40 and 50, were successfully synthesized. • Fe{sub x}Ni{sub 80−x}Co{sub 20}, x=20, 30, 40 and 50, crystallizes in fcc cubic structure. • The XRD and SEM study indicates nanocrystalline nature of the materials. • The magnetic properties have been explained on the basis of fine particle magnetism.

  12. Binary and ternary systems

    International Nuclear Information System (INIS)

    Petrov, D.A.

    1986-01-01

    Conditions for thermodynamical equilibrium in binary and ternary systems are considered. Main types of binary and ternary system phase diagrams are sequently constructed on the basis of general regularities on the character of transition from one equilibria to others. New statements on equilibrium line direction in the diagram triple points and their isothermal cross sections are developed. New represenations on equilibria in case of monovariant curve minimum and maximum on three-phase equilibrium formation in ternary system are introduced

  13. III-V/SOI vertical cavity laser with in-plane output into a Si waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta

    2015-01-01

    We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long-waveleng......We experimentally demonstrate an optically-pumped III-V-on-SOI hybrid vertical-cavity laser that outputs light into an in-plane Si waveguide, using CMOS-compatible processes. The laser operates at 1.49 $\\mu$m with a side-mode suppression-ratio of 27 dB and has a similar threshold as long...

  14. On-chip III-V monolithic integration of heralded single photon sources and beamsplitters

    Science.gov (United States)

    Belhassen, J.; Baboux, F.; Yao, Q.; Amanti, M.; Favero, I.; Lemaître, A.; Kolthammer, W. S.; Walmsley, I. A.; Ducci, S.

    2018-02-01

    We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation gher(2 )(0 )=0.10 ±0.02 that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.

  15. III-V/Active-Silicon Integration for Low-Cost High-Performance Concentrator Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ringel, Steven [The Ohio State Univ., Columbus, OH (United States); Carlin, John A [The Ohio State Univ., Columbus, OH (United States); Grassman, Tyler [The Ohio State Univ., Columbus, OH (United States)

    2018-04-17

    This FPACE project was motivated by the need to establish the foundational pathway to achieve concentrator solar cell efficiencies greater than 50%. At such an efficiency, DOE modeling projected that a III-V CPV module cost of $0.50/W or better could be achieved. Therefore, the goal of this project was to investigate, develop and advance a III-V/Si mulitjunction (MJ) CPV technology that can simultaneously address the primary cost barrier for III-V MJ solar cells while enabling nearly ideal MJ bandgap profiles that can yield efficiencies in excess of 50% under concentrated sunlight. The proposed methodology was based on use of our recently developed GaAsP metamorphic graded buffer as a pathway to integrate unique GaAsP and Ga-rich GaInP middle and top junctions having bandgaps that are adjustable between 1.45 – 1.65 eV and 1.9 – 2.1 eV, respectively, with an underlying, 1.1 eV active Si subcell/substrate. With this design, the Si can be an active component sub-cell due to the semi-transparent nature of the GaAsP buffer with respect to Si as well as a low-cost alternative substrate that is amenable to scaling with existing Si foundry infrastructure, providing a reduction in materials cost and a low cost path to manufacturing at scale. By backside bonding of a SiGe, a path to exceed 50% efficiency is possible. Throughout the course of this effort, an expansive range of new understanding was achieved that has stimulated worldwide efforts in III-V/Si PV R&D that spanned materials development, metamorphic device optimization, and complete III-V/Si monolithic integration. Highlights include the demonstration of the first ideal GaP/Si interfaces grown by industry-standard MOCVD processes, the first high performance metamorphic tunnel junctions designed for III-V/Si integration, record performance of specific metamorphic sub-cell designs, the first fully integrated GaInP/GaAsP/Si double (1.7 eV/1.1 eV) and triple (1.95 eV/1.5 eV/1.1 eV) junction solar cells, the first

  16. Thermodynamic modeling of the Ti-Al-Cr ternary system

    International Nuclear Information System (INIS)

    Chen Leyi; Qiu Aitao; Liu Lanjie; Jiang Ming; Lu Xionggang; Li Chonghe

    2011-01-01

    Research highlights: → The full experimental results of the Ti-Al-Cr ternary system and its sub-binary systems are reviewed and analysed in detail. → Based on the latest thermodynamic assessments of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the thermodynamic parameters of the Ti-Al-Cr ternary system are fully assessed by the Calphad method. → The transformation of disorder to order (bcc a 2 to B2) and the new ternary compound L 12T i 25 Cr 8 Al 67 are considered in this work. - Abstract: The Ti-Al-Cr ternary system is one of the most important systems to studying the titanium alloys. Some experimental data of this ternary system are available and a few partial thermodynamic assessments are reported. However, no full thermodynamic descriptions were published. In this study, the previous work on the Ti-Al-Cr system and its related binary systems are reviewed. Based on the thermodynamic descriptions of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the Ti-Al-Cr ternary system is assessed by means of the Calphad method. Several isothermal sections from 1073 K to 1573 K and some invariant reactions are calculated, which are in good agreement with the most of the experimental results.

  17. Improved Precursor Chemistry for the Synthesis of III-V Quantum Dots

    Science.gov (United States)

    Harris, Daniel K.; Bawendi, Moungi G.

    2012-01-01

    The synthesis of III-V Quantum Dots has been long known to be more challenging than the synthesis of other types of inorganic quantum dots. This is attributed to highly reactive group-V precursors. We synthesized molecules that are suitable for use as group-V precursors and characterized their reactivity using multiple complementary techniques. We show that the size distribution of indium arsenide quantum dots indeed improves with decreased precursor reactivity. PMID:23228014

  18. III-V compound semiconductor transistors—from planar to nanowire structures

    OpenAIRE

    Riel, Heike; Wernersson, Lars-Erik; Hong, Minghwei; del Alamo, Jesús A.

    2017-01-01

    Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic device roadmap to further improve future performance increases of integrated circuits is required to propel the electronics industry. Attention is turning to III-V compound semiconductors that are well positioned to replace silicon as the base material in logic switching devices. Their outstanding electron transport properties and the possibility to tune heterostructures provide tremendous opport...

  19. Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor

    OpenAIRE

    Manjula Vijh; R.S. Gupta; Sujata Pandey

    2017-01-01

    Tunnel Field Effect Transistor is one of the extensively researched semiconductor devices, which has captured attention over the conventional Metal Oxide Semiconductor Field Effect Transistor. This device, due to its varied advantages, is considered in applications where devices are scaled down to deep sub-micron level. Like MOSFETs, many geometries of TFETs have been studied and analyzed in the past few years. This work, presents a two dimensional analytical model for a III-V Heterojunction ...

  20. Power-efficient III-V/silicon external cavity DBR lasers.

    Science.gov (United States)

    Zilkie, A J; Seddighian, P; Bijlani, B J; Qian, W; Lee, D C; Fathololoumi, S; Fong, J; Shafiiha, R; Feng, D; Luff, B J; Zheng, X; Cunningham, J E; Krishnamoorthy, A V; Asghari, M

    2012-10-08

    We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

  1. Structural, elastic and electronic properties of transition metal carbides ZnC, NbC and their ternary alloys ZnxNb1-xC

    Science.gov (United States)

    Zidi, Y.; Méçabih, S.; Abbar, B.; Amari, S.

    2018-02-01

    We have investigated the structural, electronic and elastic properties of transition-metal carbides ZnxNb1-xC alloys in the range of 0 ≤ x ≤ 1 using the density functional theory (DFT). The full potential linearized augmented plane wave (FP-LAPW) method within a framework of the generalized gradient approximation (GGA) and GGA + U (where U is the Hubbard correlation terms) approach is used to perform the calculations presented here. The lattice parameters, the bulk modulus, its pressure derivative and the elastic constants were determined. We have obtained Young's modulus, shear modulus, Poisson's ratio, anisotropy factor by the aid of the calculated elastic constants. We discuss the total and partial densities of states and charge densities.

  2. Experimental investigation of phase equilibria in the Co-W-V ternary system

    International Nuclear Information System (INIS)

    Liu Xingjun; Zhu Yihong; Yu Yan; Wang Cuiping

    2011-01-01

    Highlights: → Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined. → No ternary compound was found in the Co-W-V ternary system. → A stable liquid miscibility gap is newly discovered in the Co-W-V ternary system. → This work is of great essence to establish the thermodynamic database for the Co-based alloys. - Abstract: The phase equilibria in the Co-W-V ternary system were experimentally investigated by optical microscopy (OM), electron probe microanalysis (EPMA) and X-ray diffraction (XRD) on the equilibrated alloys. Three isothermal sections of the Co-W-V ternary system at 1100 deg. C, 1200 deg. C and 1300 deg. C were determined, and no ternary compound was found in this system. In addition, a novel phenomena induced by the liquid phase separation in the Co-W-V alloys was firstly discovered, suggesting that a stable liquid miscibility gap exists in the Co-W-V ternary system. The newly determined phase equilibria and firstly discovered phase separation phenomena in the Co-W-V system will provide important information for the development of Co-W based alloys.

  3. Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

    Directory of Open Access Journals (Sweden)

    Ray-Hua Horng

    2013-01-01

    Full Text Available This study involved analyzing the reliability of two types of III-V solar cells: (1 III-V solar cells grown on new and recycled gallium arsenide (GaAs substrates and (2 the III-V solar cells transferred onto an electroplated nickel (Ni substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

  4. Surface monitoring for pitting evolution into uniform corrosion on Cu-Ni-Zn ternary alloy in alkaline chloride solution: ex-situ LCM and in-situ SECM

    Science.gov (United States)

    Kong, Decheng; Dong, Chaofang; Zheng, Zhaoran; Mao, Feixiong; Xu, Aoni; Ni, Xiaoqing; Man, Cheng; Yao, Jizheng; Xiao, Kui; Li, Xiaogang

    2018-05-01

    The evolution of the corrosion process on Cu-Ni-Zn alloy in alkaline chloride solution was investigated by in-situ scanning electrochemical microscopy, X-ray photoelectron spectroscopy, and ex-situ laser confocal microscopy, and the effects of ambient temperature and polarization time were also discussed. The results demonstrated a higher pitting nucleation rate and lower pit growth rate at low temperature. The ratio of pit depth to mouth diameter decreased with increasing pit volume and temperature, indicating that pits preferentially propagate in the horizontal direction rather than the vertical direction owing to the presence of corrosion products and deposited copper. The surface current was uniform and stabilized at approximately 2.2 nA during the passive stage, whereas the current increased after the pits were formed with the maximum approaching 3 nA. Increasing the temperature led to an increase in porous corrosion products (CuO, Zn(OH)2, and Ni(OH)2) and significantly increased the rate of transition from pitting to uniform corrosion. Dezincification corrosion was detected by energy dispersive spectrometry, and a mechanism for pitting transition into uniform corrosion induced by dezincification at the grain boundaries is proposed.

  5. Carbon/Ternary Alloy/Carbon Optical Stack on Mylar as an Optical Data Storage Medium to Potentially Replace Magnetic Tape

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hao; Lunt, Barry M.; Gates, Richard J.; Asplund, Matthew C.; Shutthanandan, V.; Davis, Robert C.; Linford, Matthew R.

    2013-09-11

    A novel write-once-read-many (WORM) optical stack on Mylar tape is proposed as a replacement for magnetic tape for archival data storage. This optical tape contains a cosputtered bismuth–tellurium–selenium (BTS) alloy as the write layer sandwiched between thin, protective films of reactively sputtered carbon. The composition and thickness of the BTS layer were confirmed by Rutherford Backscattering (RBS) and atomic force microscopy (AFM), respectively. The C/BTS/C stack on Mylar was written to/marked by 532 nm laser pulses. Under the same conditions, control Mylar films without the optical stack were unaffected. Marks, which showed craters/movement of the write material, were characterized by optical microscopy and AFM. The threshold laser powers for making marks on C/BTS/C stacks with different thicknesses were explored. Higher quality marks were made with a 60× objective compared to a 40× objective in our marking apparatus. Finally, the laser writing process was simulated with COMSOL.

  6. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  7. Ultraviolet photodetectors and imaging arrays based on III-V nitride heterostructures

    Science.gov (United States)

    Brown, Jeffrey David

    2000-10-01

    The III-V nitride class of compound semiconductors has received much attention in the last decade. These materials have a wide, direct bandgap, making them a prime candidate for optoelectronic devices in the blue, green, and ultraviolet spectral regions. These materials exhibit impressive optical, electrical, and thermal properties, even though there are fundamental materials issues that are thus far unresolved. This work explores the application of III-V nitride semiconductors to optical detectors in the ultraviolet region of the electromagnetic spectrum. Metalorganic vapor phase epitaxy was used to synthesize thin film p-i-n photodiode structures on double side polished sapphire substrates; these films were characterized for optical, electrical and structural properties. The grown structures were designed to respond to a predetermined region of the UV spectrum when illuminated from the substrate side. These structures were fabricated into devices using generally accepted techniques for dry etching and p and n-contact metallizations. Test devices were characterized using tools developed by the author. These devices demonstrated as high as 80% quantum efficiency and extremely low dark currents; resulting in spectral detectivities as large as 6 * 1013 cmHz1/2W-1. Devices were designed and demonstrated for a series of detection regions ranging from 365 nm to 250 nm. Photolithography masks were designed to allow the fabrication of photodiode arrays that would hybridize to commercially available CMOS based readout integrated circuits (ROICs), used routinely for infrared photodiode imaging. Photodiode arrays were fabricated and indium bumps were deposited onto the diode contacts and the ROICs to provide electrical connection. The hybrid detector arrays were placed in leadless chip carriers, wirebonded, and connected to commercially available drive and readout circuitry. Images of UV scenes were focused onto the arrays using fused quartz lenses. These images and movies

  8. Morphology of interior interfaces in dilute nitride III/V material systems; Morphologie innerer Grenzflaechen in verduennt stickstoffhaltigen III/V-Materialsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Oberhoff, S.

    2007-12-03

    This study aims to clarify structure formation processes in dilute N-containing III/V-based material systems, using highly selective etching methods and subsequent atomic force microscopy (AFM) to expose and analyse interior interfaces. In the first part of this study it was directly proved for the first time that adding Sb during growth interruption inhibits the GI-induced structural phase transition and reduces the diffusivity on GaAs and (GaIn)(NAs) surfaces. However, applying Sb during GI does not affect the driving force of the structural phase transition. Therefore a fundamental analysis about the incorporation of Sb into GaAs, Ga(NAs) and (GaIn)(NAs) was carried out in the second part of the study. Using a combination of high resolution X-ray diffraction, transmission electron microscopy and SIMS measurements, it was verified that incorporating Sb into (GaIn)(NAs) causes an increase of the In content and a decrease of the N content. In the third part of the study, novel etching methods for the GaP-based material system Ga(NAsP) are introduced which provide the opportunity to analyse structure formation processes on interior interfaces in this material system by AFM. (orig.)

  9. Kinetic study of lithium-cadmium ternary amalgam decomposition

    International Nuclear Information System (INIS)

    Cordova, M.H.; Andrade, C.E.

    1992-01-01

    The effect of metals, which form stable lithium phase in binary alloys, on the formation of intermetallic species in ternary amalgams and their effect on thermal decomposition in contact with water is analyzed. Cd is selected as ternary metal, based on general experimental selection criteria. Cd (Hg) binary amalgams are prepared by direct contact Cd-Hg, whereas Li is formed by electrolysis of Li OH aq using a liquid Cd (Hg) cathodic well. The decomposition kinetic of Li C(Hg) in contact with 0.6 M Li OH is studied in function of ageing and temperature, and these results are compared with the binary amalgam Li (Hg) decomposition. The decomposition rate is constant during one hour for binary and ternary systems. Ageing does not affect the binary systems but increases the decomposition activation energy of ternary systems. A reaction mechanism that considers an intermetallic specie participating in the activated complex is proposed and a kinetic law is suggested. (author)

  10. Hydrogen-Mediated Nitrogen Clustering in Dilute III-V Nitrides

    Science.gov (United States)

    Du, Mao-Hua; Limpijumnong, Sukit; Zhang, S. B.

    2006-08-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H2*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H2*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  11. General theory of the transverse dielectric constant of III-V semiconducting compounds

    Science.gov (United States)

    Kahen, K. B.; Leburton, J. P.

    1985-01-01

    A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

  12. Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

    OpenAIRE

    Liao, M.; Chen, S.; Huo, S.; Chen, S.; Wu, J.; Tang, M.; Kennedy, K.; Li, W.; Kumar, S.; Martin, M.; Baron, T.; Jin, C.; Ross, I.; Seeds, A.; Liu, H.

    2017-01-01

    In this paper, we report monolithically integrated IIIV\\ud quantum dot (QD) light-emitting sources on silicon substrates\\ud for silicon photonics. We describe the first practical InAs/GaAs\\ud QD lasers monolithically grown on an offcut silicon (001) substrate\\ud due to the realization of high quality III-V epilayers on silicon with\\ud low defect density, indicating that the large material dissimilarity\\ud between III-Vs and silicon is no longer a fundamental barrier\\ud limiting monolithic gro...

  13. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  14. Electronic structure and relative stability of the coherent and semi-coherent HfO2/III-V interfaces

    Science.gov (United States)

    Lahti, A.; Levämäki, H.; Mäkelä, J.; Tuominen, M.; Yasir, M.; Dahl, J.; Kuzmin, M.; Laukkanen, P.; Kokko, K.; Punkkinen, M. P. J.

    2018-01-01

    III-V semiconductors are prominent alternatives to silicon in metal oxide semiconductor devices. Hafnium dioxide (HfO2) is a promising oxide with a high dielectric constant to replace silicon dioxide (SiO2). The potentiality of the oxide/III-V semiconductor interfaces is diminished due to high density of defects leading to the Fermi level pinning. The character of the harmful defects has been intensively debated. It is very important to understand thermodynamics and atomic structures of the interfaces to interpret experiments and design methods to reduce the defect density. Various realistic gap defect state free models for the HfO2/III-V(100) interfaces are presented. Relative energies of several coherent and semi-coherent oxide/III-V semiconductor interfaces are determined for the first time. The coherent and semi-coherent interfaces represent the main interface types, based on the Ga-O bridges and As (P) dimers, respectively.

  15. Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation

    Science.gov (United States)

    Yu, Ying; Wang, Jing; Wei, Yu-Ming; Zhou, Zhang-Kai; Ni, Hai-Qiao; Niu, Zhi-Chuan; Wang, Xue-Hua; Yu, Si-Yuan

    2017-09-01

    We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish between wurtzite (WZ), zinc-blende (ZB) and ZB/WZ mixing III-V semiconducting crystal structures in nanowire systems. By neglecting the surface contributions and treating the bulk crystal within the quasi-static approximation, we can well explain the optical SHG polarimetry from the NWs with diameter from 200-600 nm. We show that the optical in-coupling and out-coupling coefficients arising from depolarization field can determine the polarization of the SHG. We also demonstrate micro-photoluminescence of GaAs quantum dots in related ZB and ZB/WZ mixing sections of core-shell NW structure, in agreement with the SHG polarimetry results. The ability to perform in situ SHG-based crystallographic study of semiconducting single and multi-crystalline nanowire heterostructures will be useful in displaying structure-property relationships of nanodevices.

  16. Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.

    Science.gov (United States)

    Mangla, Onkar; Roy, Savita; Ostrikov, Kostya Ken

    2015-12-29

    The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III-V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III-V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

  17. Pulsed laser deposition of II-VI and III-V semiconductor materials

    Energy Technology Data Exchange (ETDEWEB)

    Mele, A.; Di Palma, T.M.; Flamini, C.; Giardini Guidoni, A. [Rome, Univ. `La Sapienza` (Italy). Dep. di Chimica

    1998-12-01

    Pulsed laser irradiation of a solid target involves electronic excitation and heating, followed by expansion from the target of the elliptical gas cloud (plume) which can be eventually condensed on a suitable substrate. Pulsed laser ablation has been found to be a valuable technique to prepare II-VI and III-V thin films of semiconductor materials. Pulsed laser ablation deposition is discussed in the light of the results of an investigation on CdS, CdSe, CdTe and CdSe/CdTe multilayers and AIN, GaN and InN together with Al-Ga-In-N heterostructures. [Italiano] L`irradiazione di un target solido, mediante un fascio laser impulsato, genera una serie di processi che possono essere schematizzati come segue: riscaldamento ed eccitazione elettronica del target, da cui consegue l`espulsione di materiale sotto forma di una nube gassosa di forma ellissoidale (plume), che espande e puo` essere fatta depositare su un opportuno substrato. L`ablazione lasersi e` rivelata una tecnica valida per preparare film sottili di composti di elementi del II-VI e del III-V gruppo della tavola periodica. La deposizione via ablazione laser viene discussa alla luce dei risultati ottenuti nella preparazione di film di CdS, CdSe, CdTe e di film multistrato di CdSe/CdTe, di film di AIN, GaN, InN e di eterostrutture di Al-Ga-In-N.

  18. Cycloadditions to Epoxides Catalyzed by GroupIII-V Transition-Metal Complexes

    KAUST Repository

    D'Elia, Valerio

    2015-05-25

    Complexes of groupIII-V transition metals are gaining increasing importance as Lewis acid catalysts for the cycloaddition of dipolarophiles to epoxides. This review examines the latest reports, including homogeneous and heterogeneous applications. The pivotal step for the cycloaddition reactions is the ring opening of the epoxide following activation by the Lewis acid. Two modes of cleavage (C-C versus C-O) have been identified depending primarily on the substitution pattern of the epoxide, with lesser influence observed from the Lewis acid employed. The widely studied cycloaddition of CO2 to epoxides to afford cyclic carbonates (C-O bond cleavage) has been scrutinized in terms of catalytic efficiency and reaction mechanism, showing that unsophisticated complexes of groupIII-V transition metals are excellent molecular catalysts. These metals have been incorporated, as well, in highly performing, recyclable heterogeneous catalysts. Cycloadditions to epoxides with other dipolarophiles (alkynes, imines, indoles) have been conducted with scandium triflate with remarkable performances (C-C bond cleavage). © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    International Nuclear Information System (INIS)

    Knorr Jr, Daniel B.; Williams, Kristen S.; Baril, Neil F.; Weiland, Conan; Andzelm, Jan W.; Lenhart, Joseph L.; Woicik, Joseph C.; Fischer, Daniel A.; Tidrow, Meimei Z.; Bandara, Sumith V.; Henry, Nathan C.

    2014-01-01

    Graphical abstract: - Highlights: • HCl and citric acid showed excellent oxide removal on III/V surfaces. • Aminosilane (APTES) passivation coatings were deposited at 1–20 nm on InAs and GaSb. • These coatings showed high ionic nitrogen levels near the interface via XPS. • DFT was used to find adsorption energies of APTES with and without -OH groups. • DFT modeling showed APTES–NH 3 + hydrogen abstraction to form surface -OH groups. - Abstract: Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In 2 O 3 . Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In 2 O 3 without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that the content of ionic nitrogen

  20. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

    Energy Technology Data Exchange (ETDEWEB)

    Knorr Jr, Daniel B., E-mail: daniel.knorr.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Williams, Kristen S. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Baril, Neil F. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Weiland, Conan [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Andzelm, Jan W. [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Lenhart, Joseph L., E-mail: joseph.l.lenhart.civ@mail.mil [U.S. Army Research Laboratory, Aberdeen Proving Ground, MD 21005, United States of America (United States); Woicik, Joseph C.; Fischer, Daniel A. [National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America (United States); Tidrow, Meimei Z.; Bandara, Sumith V. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Henry, Nathan C. [U.S. Army, RDECOM, CERDEC, NVSED, Ft. Belvoir, VA 22060, United States of America (United States); Corbin Company, Alexandria, VA 22314, United States of America (United States)

    2014-11-30

    Graphical abstract: - Highlights: • HCl and citric acid showed excellent oxide removal on III/V surfaces. • Aminosilane (APTES) passivation coatings were deposited at 1–20 nm on InAs and GaSb. • These coatings showed high ionic nitrogen levels near the interface via XPS. • DFT was used to find adsorption energies of APTES with and without -OH groups. • DFT modeling showed APTES–NH{sub 3}{sup +} hydrogen abstraction to form surface -OH groups. - Abstract: Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In{sub 2}O{sub 3}. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In{sub 2}O{sub 3} without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20 nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol %. XPS results for the N1s band of APTES showed that

  1. Toward a III-V Multijunction Space Cell Technology on Si

    Science.gov (United States)

    Ringel, S. A.; Lueck, M. R.; Andre, C. L.; Fitzgerald, E. A.; Wilt, D. M.; Scheiman, D.

    2007-01-01

    High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red

  2. Strategies to control morphology in hybrid group III-V/group IV heterostructure nanowires.

    Science.gov (United States)

    Hillerich, Karla; Dick, Kimberly A; Wen, Cheng-Yen; Reuter, Mark C; Kodambaka, Suneel; Ross, Frances M

    2013-03-13

    By combining in situ and ex situ transmission electron microscopy measurements, we examine the factors that control the morphology of "hybrid" nanowires that include group III-V and group IV materials. We focus on one materials pair, GaP/Si, for which we use a wide range of growth parameters. We show through video imaging that nanowire morphology depends on growth conditions, but that a general pattern emerges where either single kinks or inclined defects form some distance after the heterointerface. We show that pure Si nanowires can be made to exhibit the same kinks and defects by changing their droplet volume. From this we derive a model where droplet geometry drives growth morphology and discuss optimization strategies. We finally discuss morphology control for material pairs where the second material kinks immediately at the heterointerface and show that an interlayer between segments can enable the growth of unkinked hybrid nanowires.

  3. Spin Manipulation through geometric phase in III-V semiconductor quantum dots

    Science.gov (United States)

    Prbahakar, Sanjay; Melnik, Roderick

    2015-03-01

    A more robust technique is proposed to flip the spin completely through geometric phase in III-V semiconductor quantum dots (QDs). We transport the QDs adiabatically in a closed loop along the circular trajectory in the plane of two dimensional electron gas with the application of time dependent gate controlled electric fields and investigate the manipulation of Berry phase with the spin-orbit couplings. Here we show that both the Rashba and the Dresselhaus couplings are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip (Phys. Rev. B 89, 245310 (2014), Applied Physics Letters 104, 142411 (2014)). We acknowledge the funding agency: Natural Sciences and Engineering Research Council of Canada and Canada Research Chair Program.

  4. Parallel nanogap fabrication with nanometer size control using III-V semiconductor epitaxial technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez-MartInez, Ivan; Gonzalez, Yolanda; Briones, Fernando [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 PTM, E-28760 Tres Cantos, Madrid (Spain)], E-mail: ivan@imm.cnm.csic.es

    2008-07-09

    A nanogap fabrication process using strained epitaxial III-V beams is reported. The process is highly reproducible, allowing parallel fabrication and nanogap size control. The beams are fabricated from MBE-grown (GaAs/GaP)/AlGaAs strained heterostructures, standard e-beam lithography and wet etching. During the wet etching process, the relaxation of the accumulated stress at the epitaxial heterostructure produces a controlled beam breakage at the previously defined beam notch. After the breakage, the relaxed strain is proportional to the beam length, allowing nanogap size control. The starting structure is similar to a mechanically adjustable break junction but the stress causing the breakage is, in this case, built into the beam. This novel technique should be useful for molecular-scale electronic devices.

  5. Hydrogen-mediated Nitrogen Clustering in Dilute III-V Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Du, M.-H.; Limpijumnong, S.; Zhang, S. B

    2006-01-01

    First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H*{sub 2}(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H*{sub 2}(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

  6. Novel hybrid III:V concentrator photovoltaic-thermoelectric receiver designs

    Science.gov (United States)

    Sweet, Tracy K. N.; Rolley, Matthew H.; Prest, Martin J.; Min, Gao

    2017-09-01

    This paper presents the design, manufacture and electrical characterization of novel hybrid III:V Concentrator Photovoltaic-Thermoelectric receivers. Addition of an encapsulating and spectral homogenizing single active surface secondary optic lens increased the solar cell electrical power output from 7.66mW (ALPHA no cooling) to 18.20mW (KAPPA with TE cooling). The effective optical concentration of the optics, based on short circuit current, was x2.4. A linear irradiance vs maximum power receiver output relationship was observed (R2=0.9978), confirming good optical alignment during manufacture and likewise internal current matching of the series-connected triple-junction cell. An in-depth COMSOL model for simulated evaluation of the synergistic thermally-dependent parameters inherent to hybrid devices was built and experimentally validated.

  7. Nanoscale III-V on Si-based junctionless tunnel transistor for EHF band applications

    Science.gov (United States)

    Goswami, Yogesh; Asthana, Pranav; Ghosh, Bahniman

    2017-06-01

    A single gate III-V junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniformly n-type doped channel of GaSb i.e. gallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as {I}{ON}, {I}{ON}/{I}{OFF}, average and point subthreshold slope as well as device parameters for analog applications viz. transconductance {g}{{m}}, transconductance generation efficiency {g}{{m}}/{I}{{D}}, various capacitances and the unity gain frequency {f}{{T}} are studied using a device simulator. Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

  8. Lattice-Mismatched III-V Epilayers for High-Efficiency Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Ahrenkiel, Scott Phillip [South Dakota School of Mines & Technology, Rapid City, SD (United States)

    2013-06-30

    The project focused on development of new approaches and materials combinations to expand and improve the quality and versatility of lattice-mismatched (LMM) III-V semiconductor epilayers for use in high-efficiency multijunction photovoltaic (PV) devices. To address these goals, new capabilities for materials synthesis and characterization were established at SDSM&T that have applications in modern opto- and nano-electronics, including epitaxial crystal growth and transmission electron microscopy. Advances were made in analyzing and controlling the strain profiles and quality of compositional grades used for these technologies. In particular, quaternary compositional grades were demonstrated, and a quantitative method for characteristic X-ray analysis was developed. The project allowed enhanced collaboration between scientists at NREL and SDSM&T to address closely related research goals, including materials exchange and characterization.

  9. Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

    Science.gov (United States)

    Vilenchik, Yaakov Yasha

    Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

  10. Acousto-optic modulation of III-V semiconductor multiple quantum wells

    International Nuclear Information System (INIS)

    Smith, D.L.; Kogan, S.M.; Ruden, P.P.; Mailhiot, C.

    1996-01-01

    We present an analysis of the effect of surface acoustic waves (SAW close-quote s) on the optical properties of III-V semiconductor multiple quantum wells (MQW close-quote s). Modulation spectra at the fundamental and second harmonic of the SAW frequency are presented. The SAW modulates the optical properties of the MQW primarily by changing optical transition energies. The SAW generates both strains, which modulate the transition energies by deformation potential effects, and electric fields, which modulate the transition energies by the quantum confined Stark effect. We find that modulation of the transition energies by strain effects is usually more important than by electric-field effects. If large static electric fields occur in the MQW, the SAW-generated electric field can mix with the static field to give optical modulation, which is comparable in magnitude to modulation from the deformation potential effect. If there are no large static electric fields, modulation by the SAW-generated fields is negligible. A large static electric field distributes oscillator strength among the various optical transitions so that no single transition is as strong as the primary allowed transitions without a static electric field. To achieve the maximum modulation for fixed SAW parameters, it is best to modulate a strong optical transition. Thus optimum modulation occurs when there are no large static electric fields present and that modulation is primarily from deformation potential effects. We specifically consider Ga x In 1-x As/Ga x Al 1-x As MQW close-quote s grown on (100) and (111) oriented substrates, but our general conclusions apply to other type I MQW close-quote s fabricated from III-V semiconductors. copyright 1996 The American Physical Society

  11. Growth of III-V nitride materials by MOCVD for device applications

    Science.gov (United States)

    Eiting, Christopher James

    This dissertation describes an investigation of the growth of gallium nitride (GaN) and aluminum gallium nitride (AlxGa1-x N) semiconductor materials by metalorganic chemical vapor deposition (MOCVD) for heterojunction field-effect transistor (HFET) and photodetector device applications. In Chapter I, the III-V nitride material system is discussed, and the current status of growth and device research in this material system is reviewed. Chapter 2 presents a detailed discussion of two important tensor properties of the wurtzite III-V nitrides: elasticity and piezoelectricity. In this discussion, a series of equations are developed that are used throughout this work to calculate properties such as strain, composition, and piezoelectric charge. In Chapter 3, the characterization techniques used to gather data for this dissertation are described. Particular attention is given to x-ray diffraction because of the usefulness and versatility of this technique. Chapter 4 is a description of the MOCVD reactor used to grow all of the films in this work. Chapter 5 presents a complete discussion of the growth and doping of GaN epitaxial layers. This chapter is divided into five sections: buffer layer optimization, GaN:ud growth, GaN:Si growth, Si-implantation of GaN, and GaN:Mg growth. In Chapter 6, the focus shifts to AlGaN epitaxial growth. The first part of the chapter is devoted to the growth and doping of AlGaN layers, while the second part deals with the characteristics of AlGaN/GaN heterostructures. Chapter 7 displays some of the device data from HFETs and photodetectors fabricated from the material described in Chapter 5 and Chapter 6. Finally, this dissertation concludes with Chapter 8, a summary of results and a discussion of potential research for the future.

  12. Wurtzite-derived ternary I?III?O2 semiconductors

    OpenAIRE

    Omata, Takahisa; Nagatani, Hiraku; Suzuki, Issei; Kita, Masao

    2015-01-01

    Ternary zincblende-derived I?III?VI2 chalcogenide and II?IV?V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I?III?O2 oxide semiconductors with a wurtzite-derived ?-NaFeO2 structure are limited. Wurtzite-derived ?-LiGaO2 and ?-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. ?-CuGaO2, which...

  13. Ternary alloy nanocatalysts for hydrogen evolution reaction

    Indian Academy of Sciences (India)

    Ni use in acidic media is restricted due to corrosion, it can be used in the alkaline medium as the process of corrosion is insignificant. It has been well established that water split- ting in the alkaline medium for the production of pure hydro- gen has an advantage due to being environmentally benign, having low cost and ...

  14. Ternary alloy nanocatalysts for hydrogen evolution reaction

    Indian Academy of Sciences (India)

    Figueiredo J L 2013 Int. J. Hydrogen Energy 38 3137. [4] Lubitz B and Tumas W 2007 Chem. Rev. 107 3900. [5] Barbaro C B P 2009 Catalysis for Sustainable Energy Pro- duction (Wiley-VCH: Weinheim). [6] Vielstich G W, Lamm A, Vielstich H W, Lamm A and. Gasteiger H 2003 Handbook of Fuel Cells: Fundamentals,.

  15. Short range order in FeCo-X alloys

    International Nuclear Information System (INIS)

    Fultz, B.

    1988-01-01

    Moessbauer spectrometry was used to study the kinetics of chemical ordering in FeCo and in FeCo alloyed with ternary solutes. With respect to the binary FeCo alloy, the kinetics of B2 ordering were slowed when 2% of 4d- or 5d-series ternary solute atoms were present, but 3p- and 3d-series ternary solutes had little effect on ordering kinetics. The relaxation of order around the ternary solute atoms could be discerned in Moessbauer spectra, and it seems that the development of B2 short range order is influenced by structural relaxations around the ternary solute atoms. Different thermal treatments were shown to cause different relaxations of and correlations, suggesting that Moessbauer spectrometry can be used to identify different kinetic paths of ordering in ternary alloys. (orig.)

  16. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    Energy Technology Data Exchange (ETDEWEB)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  17. Constitutional studies of the molybdenum-ruthenium-palladium ternary system

    International Nuclear Information System (INIS)

    Cornish, L.A.; Pratt, J.N.

    1997-01-01

    An experimental and computational study has been made of phase equilibria in the Mo-Ru-Pd ternary system. The constitution of annealed binary and ternary alloys was investigated using optical and electron microscopy, X-ray diffraction and SEM phase analysis techniques. Limited thermodynamic measurements were made using the ZrO 2 solid electrolyte e.m.f. method. The data obtained from the various techniques were used to construct a ternary isothermal section at 1473 K. The experimentally determined section is compared with a calculated section for the same temperature, computed using thermodynamic coefficients derived solely from binary system information. Lattice parameters are reported for the b.c.c., f.c.c. and c.p.h. solid solutions and for the σ phase. (orig.)

  18. On/off-current Ratio and Ambipolar Behavior of Narrow Bandgap III-V Nanowire FETs

    Science.gov (United States)

    Zhao, Yanjie; Candebat, Drew; Delker, Collin; Zi, Yunlong; Janes, David; Appenzeller, Joerg; Yang, Chen

    2013-03-01

    III-V nanowires (NW) are promising candidates for future device applications due to the high bulk mobility. Yet the small bandgap may result in undesirable high off-current. Here we establish a simple but reliable model that quantitatively explains how channel bandgap and Schottky barriers at metal contacts affect the ambipolar characteristics and the achievable on/off-current ratios of NW-FETs. Thus one can gain insights of the expected transfer characteristics of a given channel material with certain device structure, and the optimal choice of materials for different device applications in ultimately scaled cases. The physics of electron transport in both ideal case (no Schottky barrier) and practical case (with Schottky barrier) is studied. The impact of Schottky barriers is evaluated by numerical calculation of the tunneling current, and is found to play a critical role for the different characteristics observed. A universal plot of on/off ratio vs. bandgap is presented. The excellent agreement between our simulation predictions and experiment results from InAs, InSb, Ge NWs and CNTs highlights the potential of our approach for understanding narrow bandgap NW-FETs, bridging material development and device applications, and guiding future transistor design.

  19. Positron annihilation studies of defects in molecular beam epitaxy grown III-V layers

    International Nuclear Information System (INIS)

    Umlor, M.T.; Keeble, D.J.; Cooke, P.W.

    1994-01-01

    A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V layers is Presented. Variable energy positron beam measurements on Al 0.32 Ga 0.68 As undoped and Si doped have been completed. Positron trapping at a open volume defect in Al 0.32 Ga 0.68 :Si for temperatures from 300 to 25 K in the dark was observed. The positron trap was lost after 1.3 eV illumination at 25K. These results indicate an open volume defect is associated with the local structure of the deep donor state of the DX center. Stability of MBE GaAs to thermal annealing war, investigated over the temperature range of 230 to 700 degrees C, Proximity wafer furnace anneals in flowing argon were used, Samples grown above 450 degrees C were shown to be stable but for sample below this temperature an anneal induced vacancy related defect was produced for anneals between 400 and 500 degrees C. The nature of the defect was shown to be different for material grown at 350 and 230 degrees C. Activation energies of 2.5 eV to 2.3 eV were obtained from isochronal anneal experiments for samples grown at 350 and 230 degrees C, respectively

  20. III-V on silicon micro-photonic circuits for frequency downconversion of RF signals

    Science.gov (United States)

    Roelkens, G.; Keyvaninia, S.; Tassaert, M.; Latkowski, S.; Bente, E.; Mariën, J.; Thomassen, L.; Baets, R.

    2017-11-01

    RF frequency downconverters are of key importance in communication satellites. Classically, this is implemented using an electronic mixer. In this paper we explore the use of photonic technology to realize the same functionality. The potential advantages of such an approach compared to the classical microwave solutions are that it is lighter weight, has lower power consumption and can be made smaller if photonic technology is used. An additional advantage is the fact that the optical local oscillator (LO) reference can easily be transported over longer distances than the equivalent LO signal in the microwave domain due to the large bandwidth and low loss and dispersion of optical fiber. Another big advantage is that one can envision the use of short pulse trains as the LO - starting off from a sinusoidal RF reference - in order to exploit subsampling. Subsampling avoids the need for high frequency LO references, which is especially valuable if a downconversion over several 10s of GHz is required. In this paper we present the operation principle of such a photonic frequency downconverter and describe the performance of the developed micro-photonic building blocks required for this functionality. These micro-photonic building blocks are implemented on a III-V semiconductor-on-silicon photonic platform. The components include a micro-photonic hybridly modelocked laser, a 30GHz electroabsorption modulator and an intermediate frequency (1.5GHz) photodetector.

  1. Impact of photon recycling and luminescence coupling in III-V photovoltaic devices

    Science.gov (United States)

    Walker, A. W.; Höhn, O.; Micha, D. N.; Wagner, L.; Helmers, H.; Bett, A. W.; Dimroth, F.

    2015-03-01

    Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 μs and 100 ns respectively in a 2 μm thin active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's non-radiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of concentration.

  2. FREQUENCY DEFORMITY SCOLIOSIS AND FLAT FEET IN PUPILS III, V.VII GRADE SCHOOL

    Directory of Open Access Journals (Sweden)

    Dejаn Gojković

    2013-07-01

    Full Text Available Scoliosis is a lateral deviation of the spine or the angular deviation of the normal position of one or more segmenata.Funkcional curve can be fully corrected until the internal structural scoliosis are bone disorders, muscle nerve elements that support the spine, and complete correction is impossible. Static role is reflected in the foot taking kisses body weight through the bones pop and transmission and distribution of weight on the main point of support of the foot and therefore subject to various changes in the normal foot status.Dinamic role is reflected in walking, running and jumping in different forms. Because of this, the percentage of foot disorders is particularly large in the form of lowering the testing we arche.Perform o.š.Pale Pale deformities in scoliosis and flat feet in students III, V, VII grade. Our aim was to verify the extent to which physical education classes take appropriate measures in the detection and removal of poor posture and physical deformities. For testing we used: clinical method for scoliosis, a method for flat feet -Thomson method.

  3. Organometallic molecular precursors for low-temperature MOCVD of III-V semiconductors

    Science.gov (United States)

    Maury, F.

    1992-02-01

    Metallorganic chemical vapor deposition is a practical technique for the preparation of III-V epitaxial layers used in the fabrication of microelectronic and optoelectronic devices. The usual Ga and As sources for GaAS epitaxy are Ga(CH3)3 and AsH3, respectively. However, the use of these precursors has some disadvantages related to the toxicity and storage of arsine, stoichiometry control problems, carbon incorporation and unwanted side reactions. Several groups of researchers have investigated alternative sources of both the group III and group V elements. A review of these new organometallic precursors is presented in this paper. However, because group III and group V elements form Lewis acid-base adducts in the CVD reactor, we have investigated the attractive idea of using this class of compounds as single starting material. Several adducts have been successfully used for epitaxial growth of GaAs. Moreover, to avoid loss of stoichiometry due to dissociation of the adduct, the ability of organometallic molecules which feature a covalent bond between the group III and group V elements has also been investigated. These covalent compounds are probably formed in the MOCVD reactor using alkyl group V compounds containing acidic hydrogen R3-nMHn (M equals As, P; n equals 1.2). These new precursors are also briefly reviewed.

  4. Exploration of GaInT1P and Related T1-Containing III-V Alloys for Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Friedman, D.J.; Kibbler, A.E.; Kurtz, S.R.

    1998-11-02

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics.

  5. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    and the delta function restricts the problem to elastic tunneling only. At reasonably low temperatures the Fermi-Dirac function can be approximated as...and magneto - transport measurements at higher fields are aimed at understanding the low temperature behavior. The NiTiSn films also show...through layer i. In our experiments φ = 55◦. This attenuation length is calculated from an elastic correction to the empirical Tanuma, Powell, and Penn

  6. Exploration of GaInT1P and Related T1-Containing III-V Alloys for Photovoltaics

    International Nuclear Information System (INIS)

    Friedman, D.J.; Kibbler, A.E.; Kurtz, S.R.

    1999-01-01

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics

  7. Exploration of GaInTlP and related Tl-containing III-V alloys for photovoltaics

    International Nuclear Information System (INIS)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.

    1999-01-01

    This paper discusses the results of an attempt to grow GaInTlP for application as a 1-eV material for the third junction of a GaInP/GaAs/3rd-junction high-efficiency solar cell. Although early indications from the literature were promising, we are unable to produce crystalline homogeneous material, and so we conclude that this material is not a promising candidate for such applications as photovoltaics

  8. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, Philip M., E-mail: philip.campbell@gatech.edu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States); Tarasov, Alexey; Joiner, Corey A.; Vogel, Eric M. [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Ready, W. Jud [Electronic Systems Laboratory, Georgia Tech Research Institute, Atlanta, Georgia 30332 (United States)

    2016-01-14

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  9. Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

    Science.gov (United States)

    Campbell, Philip M.; Tarasov, Alexey; Joiner, Corey A.; Ready, W. Jud; Vogel, Eric M.

    2016-01-01

    Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

  10. Suitability of III-V [XH4][YH4] materials for hydrogen storage: A density functional study

    NARCIS (Netherlands)

    Zuliani, F.; Gotz, A.W.; Fonseca Guerra, C.; Baerends, E.J.

    2009-01-01

    In the search for novel hydrogen storage media, the III-V hydridic material [NH4] [BH4] is a natural candidate. It can store a high wt% of hydrogen and has a favorable volumetric density. Unfortunately it was found to decompose slowly at room temperature. It is of interest to consider chemically

  11. Etude du courant inversé des photodiodes PIN des composés III-V ...

    African Journals Online (AJOL)

    Mots clés : Semi-conducteurs, photodiodes, courant inverse-dopage. Technological applications carry out that materials are very useful, so their studies are essential such as their characteristics (electrical, optical, mechanical, and thermal). The I-V characteristics were studied for photodiodes of III-V compound in reverse ...

  12. New Theoretical Technique for Alloy Design

    Science.gov (United States)

    Ferrante, John

    2005-01-01

    During the last 2 years, there has been a breakthrough in alloy design at the NASA Lewis Research Center. A new semi-empirical theoretical technique for alloys, the BFS Theory (Bozzolo, Ferrante, and Smith), has been used to design alloys on a computer. BFS was used, along with Monte Carlo techniques, to predict the phases of ternary alloys of NiAl with Ti or Cr additions. High concentrations of each additive were used to demonstrate the resulting structures.

  13. Anomalous lattice parameter of magnetic semiconductor alloys

    OpenAIRE

    CAETANO, Clovis; MARQUES, Marcelo; FERREIRA, Luiz G.; TELES, Lara K.

    2009-01-01

    The addition of transition metals (TM) to III-V semiconductors radically changes their electronic, magnetic and structural properties. In contrast to the conventional semiconductor alloys, the lattice parameter in magnetic semiconductor alloys, including the ones with diluted concentration (the diluted magnetic semiconductors - DMS), cannot be determined uniquely from the composition. By using first-principles calculations, we find a direct correlation between the magnetic moment and the anio...

  14. Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

    Science.gov (United States)

    Rahman, Md. Shafiqur

    Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with

  15. The Development of III-V Semiconductor MOSFETs for Future CMOS Applications

    Science.gov (United States)

    Greene, Andrew M.

    Alternative channel materials with superior transport properties over conventional strained silicon are required for supply voltage scaling in low power complementary metal-oxide-semiconductor (CMOS) integrated circuits. Group III-V compound semiconductor systems offer a potential solution due to their high carrier mobility, low carrier effective mass and large injection velocity. The enhancement in transistor drive current at a lower overdrive voltage allows for the scaling of supply voltage while maintaining high switching performance. This thesis focuses on overcoming several material and processing challenges associated with III-V semiconductor development including a low thermal processing budget, high interface trap state density (Dit), low resistance source/drain contacts and growth on lattice mismatched substrates. Non-planar In0.53Ga0.47As FinFETs were developed using both "gate-first" and "gate-last" fabrication methods for n-channel MOSFETs. Electron beam lithography and anisotropic plasma etching processes were optimized to create highly scaled fins with near vertical sidewalls. Plasma damage was removed using a wet etch process and improvements in gate efficiency were characterized on MOS capacitor structures. A two-step, selective removal of the pre-grown n+ contact layer was developed for "gate-last" recess etching. The final In0.53Ga 0.47As FinFET devices demonstrated an ION = 70 mA/mm, I ON/IOFF ratio = 15,700 and sub-threshold swing = 210 mV/dec. Bulk GaSb and strained In0.36Ga0.64Sb quantum well (QW) heterostructures were developed for p-channel MOSFETs. Dit was reduced to 2 - 3 x 1012 cm-2eV-1 using an InAs surface layer, (NH4)2S passivation and atomic layer deposition (ALD) of Al2O3. A self-aligned "gate-first" In0.36Ga0.64Sb MOSFET fabrication process was invented using a "T-shaped" electron beam resist patterning stack and intermetallic source/drain contacts. Ni contacts annealed at 300°C demonstrated an ION = 166 mA/mm, ION/IOFF ratio = 1

  16. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Passmann, Regina

    2008-08-15

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  17. Interface formation between hydrocarbon ring molecules and III-V semiconductor surfaces

    International Nuclear Information System (INIS)

    Passmann, Regina

    2008-01-01

    In this work a systematical study to investigate the adsorption structures of small hydrocarbon ring shaped molecules on III-V semiconductor surfaces with Photo-Emission Spectroscopy (PES), Reflectance Anisotropy Spectroscopy (RAS), Scanning Tunneling Microscopy (STM) as well as Low Electron Energy Diffraction (LEED) was performed. To investigate the influence of the surface structure in detail the surface dimer configuration to the adsorption process of organic molecules GaAs(001) surfaces, the c(4 x 4), the (2 x 4) and the (4 x 2) have been investigated as well as the adsorption of cyclopentene on the InP(001)(2 x 4) reconstructed surface. In the direct comparison it is shown that cyclopentene bonds to the InP(001)(2 x 4) surface via a cycloaddition like reaction. During this adsorption the double bond splits which is in contrast to the adsorption of cyclopentene on the GaAs(001) surfaces. Therefrom it is concluded that the surface geometry has an influence on the resulting adsorption structure. In order to investigate the influence of the intra-molecular double bonds, cyclopentene (one double bond), 1,4-cyclohexadiene (two double bonds) and benzene (three double bonds) were used for the characterization of the interface formation. With the investigations on the GaAs(001) reconstructed surfaces it was shown that a dependency of the bonding configuration on the intra-molecular double bonds exists. During the adsorption of cyclopentene no evidence was found that the double bond has to be involved in the interface formation while during the adsorption of 1,4-cyclohexadiene and benzene the double bonds are involved. Furthermore it was found that a bonding to As atoms of the surface is more likely than a bonding to Ga atoms. (orig.)

  18. Phenomenological survey on the potential profile evolution in III-V binary compounds

    Directory of Open Access Journals (Sweden)

    Alejandro Mendoza Álvarez

    2011-01-01

    Full Text Available En este artículo se presenta el cambio en el perfil de eficacia potencial de algunos compuestos cuando el bandmixing de huecos ligeros y pesados se altera. Se obtuvieron mediante la aplicación de este teorema generalizado Shur a un problema de valores propios cuadrática obtenidos a partir de un sistema con N ecuaciones de segundo orden, junto en el contexto de la aproximación de masa efectiva multibanda. Se consideraron los valores de energía incidente que fue menor, igual y superior a la altura de la barrera de dispersión potencial de diferentes compuestos de semiconductores III-V binario. La mayoría de las propiedades estándar de los compuestos binarios en este estudio están garantizados, pero no todos los materiales que elegimos, han puesto de manifiesto la evolución que se espera en su perfil de potencial efectivo: algunos de los que constituyen los pozos cuánticos (QW en aplicaciones tecnológicas sólo convertirse en efectiva barrera (B las conductas de los agujeros de luz (LH cuando están en la energía incidente diferente (E se extiende y bandmixing diferentes presentes. Ninguno de los compuestos que constituyen barreras para las aplicaciones tecnológicas en este estudio se convierte en eficaz comportamientos QW válido tanto para la LH y HH. Sorprendentemente, todos los compuestos en este estudio que constituyen barreras estándar en las aplicaciones tecnológicas, las transiciones presente desde CS a B para la LH en el rango donde el valor de E es mayor que la altura de la barrera.

  19. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  20. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  1. Si-Ge-Sn alloys with 1.0 eV gap for CPV multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Roucka, Radek, E-mail: radek@translucentinc.com; Clark, Andrew [Translucent Inc., Palo Alto, CA, 94303 (United States); Landini, Barbara [Sumika Electronic Materials Inc., Phoenix, AZ, 85034 (United States)

    2015-09-28

    Si-Ge-Sn ternary group IV alloys offer an alternative to currently used 1.0 eV gap materials utilized in multijunction solar cells. The advantage of Si-Ge-Sn is the ability to vary both the bandgap and lattice parameter independently. We present current development in fabrication of Si-Ge-Sn alloys with gaps in the 1.0 eV range. Produced material exhibits excellent structural properties, which allow for integration with existing III-V photovoltaic cell concepts. Time dependent room temperature photoluminescence data demonstrate that these materials have long carrier lifetimes. Absorption tunable by compositional changes is observed. As a prototype device set utilizing the 1 eV Si-Ge-Sn junction, single junction Si-Ge-Sn device and triple junction device with Si-Ge-Sn subcell have been fabricated. The resulting I-V and external quantum efficiency data show that the Si-Ge-Sn junction is fully functional and the performance is comparable to other 1.0 eV gap materials currently used.

  2. Phase Equilibria of the Fe-Ni-Sn Ternary System at 270°C

    Science.gov (United States)

    Huang, Tzu-Ting; Lin, Shih-Wei; Chen, Chih-Ming; Chen, Pei Yu; Yen, Yee-Wen

    2016-12-01

    The Fe-42 wt.% Ni alloy, also known as a 42 invar alloy (Alloy 42), is used as a lead-frame material because its thermal expansion coefficient is much closer to Si substrate than Cu or Ni substrates. In order to enhance the wettability between the substrate and solder, the Sn layer was commonly electroplated onto the Alloy 42 surface. A clear understanding of the phase equilibria of the Fe-Ni-Sn ternary system is necessary to ensure solder-joint reliability between Sn and Fe-Ni alloys. To determine the isothermal section of the Fe-Ni-Sn ternary system at 270°C, 26 Fe-Ni-Sn alloys with different compositions were prepared. The experimental results confirmed the presence of the Fe3Ni and FeNi phases at 270°C. Meanwhile, it observed that the isothermal section of the Fe-Ni-Sn ternary system was composed of 11 single-phase regions, 19 two-phase regions and nine tie-triangles. Moreover, no ternary compounds were found in the Fe-Ni-Sn system at 270°C.

  3. Phase stability and ordering in diluted magnetic III-V semiconductors

    Czech Academy of Sciences Publication Activity Database

    Drchal, Václav; Kudrnovský, Josef; Turek, Ilja; Máca, František; Weinberger, P.

    2004-01-01

    Roč. 84, č. 18 (2004), s. 1889-1905 ISSN 1478-6435 R&D Projects: GA AV ČR IAA1010203; GA MŠk OC P5.30 Institutional research plan: CEZ:AV0Z1010914 Keywords : diluted ferromagnetic semiconductors * phase stability * Ga-Mn-As alloy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.167, year: 2004

  4. Using Ternary Alloy Additions to Engineer Nitinol Shape Memory Alloys

    Data.gov (United States)

    National Aeronautics and Space Administration — Improving travel capabilities is essential in order to further investigative space exploration. For aerospace applications, weight savings is essential. Shape memory...

  5. 25-Gb/s Transmission Over 2.5-km SSMF by Silicon MRR Enhanced 1.55-mu m III-V/SOI DML

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ozolins, Oskars

    2017-01-01

    -GHz 1.55-mu m directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER

  6. Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states

    International Nuclear Information System (INIS)

    Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; Brennan, B.; Hinkle, C. L.; Wallace, R. M.; Vogel, E. M.

    2014-01-01

    The origin of the anomalous frequency dispersion in accumulation capacitance of metal-insulator-semiconductor devices on InGaAs and InP substrates is investigated using modeling, electrical characterization, and chemical characterization. A comparison of the border trap model and the disorder induced gap state model for frequency dispersion is performed. The fitting of both models to experimental data indicate that the defects responsible for the measured dispersion are within approximately 0.8 nm of the surface of the crystalline semiconductor. The correlation between the spectroscopically detected bonding states at the dielectric/III-V interface, the interfacial defect density determined using capacitance-voltage, and modeled capacitance-voltage response strongly suggests that these defects are associated with the disruption of the III-V atomic bonding and not border traps associated with bonding defects within the high-k dielectric.

  7. Optimization of the silicon subcell for III-V on silicon multijunction solar cells: Key differences with conventional silicon technology

    Science.gov (United States)

    García-Tabarés, Elisa; Martín, Diego; García, Iván; Lelièvre, Jean François; Rey-Stolle, Ignacio

    2012-10-01

    Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon (Si) bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic (PV) applications. Such integration would offer a cost breakthrough for PV technology, unifying the low cost of Si and the efficiency potential of III-V multijunction solar cells. The optimization of the Si solar cells properties in flat-plate PV technology is well-known; nevertheless, it has been proven that the behavior of Si substrates is different when processed in an MOVPE reactor In this study, we analyze several factors influencing the bottom subcell performance, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the passivation quality provided by the GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

  8. All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

    Science.gov (United States)

    Wu, Yingchen; Huang, Qiangsheng; Keyvaninia, Shahram; Katumba, Andrew; Zhang, Jing; Xie, Weiqiang; Morthier, Geert; He, Jian-Jun; Roelkens, Gunther

    2016-09-05

    We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion.

  9. Silicon, germanium, and III-V-based tunneling devices for low-power applications

    Science.gov (United States)

    Smith, Joshua T.

    While the scaling of transistor dimensions has kept pace with Moore's Law, the voltages applied to these devices have not scaled in tandem, giving rise to ever-increasing power/heating challenges in state-of-the-art integrated circuits. A primary reason for this scaling mismatch is due to the thermal limit---the 60 mV minimum required at room temperature to change the current through the device by one order of magnitude. This voltage scaling limitation is inherent in devices that rely on the mechanism of thermal emission of charge carriers over a gate-controlled barrier to transition between the ON- and OFF-states, such as in the case of conventional CMOS-based technologies. To overcome this voltage scaling barrier, several steep-slope device concepts have been pursued that have experimentally demonstrated sub-60-mV/decade operation since 2004, including the tunneling-field effect transistor (TFET), impact ionization metal-oxide-semiconductor (IMOS), suspended-gate FET (SG-FET), and ferroelectric FET (Fe-FET). These reports have excited strong efforts within the semiconductor research community toward the realization of a low-power device that will support continued scaling efforts, while alleviating the heating issues prevalent in modern computer chips. Literature is replete with claims of sub-60-mV/decade operation, but often with neglect to other voltage scaling factors that offset this result. Ideally, a low-power device should be able to attain sub-60-mV/decade inverse subthreshold slopes (S) employing low supply and gate voltages with a foreseeable path toward integration. This dissertation describes the experimental development and realization of CMOS-compatible processes to enhance tunneling efficiency in Si and Si/Ge nanowire (NW) TFETs for improved average S (S avg) and ON-currents (ION), and a novel, III-V-based tunneling device alternative is also proposed. After reviewing reported efforts on the TFET, IMOS, and SG-FET, the TFET is highlighted as the

  10. Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers.

    Science.gov (United States)

    Ben Bakir, B; Descos, A; Olivier, N; Bordel, D; Grosse, P; Augendre, E; Fulbert, L; Fedeli, J M

    2011-05-23

    We report the first demonstration of an electrically driven hybrid silicon/III-V laser based on adiabatic mode transformers. The hybrid structure is formed by two vertically superimposed waveguides separated by a 100-nm-thick SiO2 layer. The top waveguide, fabricated in an InP/InGaAsP-based heterostructure, serves to provide optical gain. The bottom Si-waveguides system, which supports all optical functions, is constituted by two tapered rib-waveguides (mode transformers), two distributed Bragg reflectors (DBRs) and a surface-grating coupler. The supermodes of this hybrid structure are controlled by an appropriate design of the tapers located at the edges of the gain region. In the middle part of the device almost all the field resides in the III-V waveguide so that the optical mode experiences maximal gain, while in regions near the III-V facets, mode transformers ensure an efficient transfer of the power flow towards Si-waveguides. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side-mode suppression ratio is as high as 20 dB, and the fiber-coupled output power is ~7 mW.

  11. Nanostructured Platinum Alloys for Use as Catalyst Materials

    Science.gov (United States)

    Hays, Charles C. (Inventor); Narayan, Sri R. (Inventor)

    2015-01-01

    A series of binary and ternary Pt-alloys, that promote the important reactions for catalysis at an alloy surface; oxygen reduction, hydrogen oxidation, and hydrogen and oxygen evolution. The first two of these reactions are essential when applying the alloy for use in a PEMFC.

  12. Metabolomic and proteomic biomarkers for III-V semiconductors: Chemical-specific porphyrinurias and proteinurias

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2005-01-01

    A pressing need exists to develop and validate molecular biomarkers to assess the early effects of chemical agents, both individually and in mixtures. This is particularly true for new and chemically intensive industries such as the semiconductor industry. Previous studies from this laboratory and others have demonstrated element-specific alterations of the heme biosynthetic pathway for the III-V semiconductors gallium arsenide (GaAs) and indium arsenide (InAs) with attendant increased urinary excretion of specific heme precursors. These data represent an example of a metabolomic biomarker to assess chemical effects early, before clinical disease develops. Previous studies have demonstrated that the intratracheal or subcutaneous administration of GaAs and InAs particles to hamsters produces the induction of the major stress protein gene families in renal proximal tubule cells. This was monitored by 35-S methionine labeling of gene products followed by two-dimensional gel electrophoresis after exposure to InAs particles. The present studies examined whether these effects were associated with the development of compound-specific proteinuria after 10 or 30 days following subcutaneous injection of GaAs or InAs particles in hamsters. The results of these studies demonstrated the development of GaAs- and InAs-specific alterations in renal tubule cell protein expression patterns that varied at 10 and 30 days. At the 30-day point, cells in hamsters that received InAs particles showed marked attenuation of protein expression, suggesting inhibition of the stress protein response. These changes were associated with GaAs and InAs proteinuria patterns as monitored by two-dimensional gel electrophoresis and silver staining. The intensity of the protein excretion patterns increased between the 10- and 30-day points and was most pronounced for animals in the 30-day InAs treatment group. No overt morphologic signs of cell death were seen in renal tubule cells of these animals

  13. Iron binary and ternary coatings with molybdenum and tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Yar-Mukhamedova, Gulmira, E-mail: gulmira-alma-ata@mail.ru [Institute Experimental and Theoretical Physics Al-Farabi Kazakh National University, 050038, Al-Farabi av., 71, Almaty (Kazakhstan); Ved, Maryna; Sakhnenko, Nikolay; Karakurkchi, Anna; Yermolenko, Iryna [National Technical University “Kharkov Polytechnic Institute”, Kharkov (Ukraine)

    2016-10-15

    Highlights: • High quality coatings of double Fe-Mo and ternary Fe-Mo-W electrolytic alloys can be produced both in a dc and a pulsed mode. • Application of unipolar pulsed current allows receiving an increased content of the alloying components and their more uniform distribution over the surface. • It is established that Fe-Mo and Fe-Mo-W coatings have an amorphous structure and exhibit improved corrosion resistance and microhardness as compared with the steel substrate due to the inclusion molybdenum and tungsten. - Abstract: Electrodeposition of Fe-Mo-W and Fe-Mo layers from a citrate solution containing iron(III) on steel and iron substrates is compared. The utilization of iron(III) compounds significantly improved the electrolyte stability eliminating side anodic redox reactions. The influence of concentration ratios and electrodeposition mode on quality, chemical composition, and functional properties of the alloys is determined. It has been found that alloys deposited in pulse mode have more uniform surface morphology and chemical composition and contain less impurities. Improvement in physical and mechanical properties as well as corrosion resistance of Fe-Mo and Fe-Mo-W deposits when compared with main alloy forming metals is driven by alloying components chemical passivity as well as by alloys amorphous structure. Indicated deposits can be considered promising materials in surface hardening technologies and repair of worn out items.

  14. Monitoring of stress relaxation and defect formation in metamorphic III-V semiconductor heterostructures for high-efficiency solar cells; Kontrolle von Spannungsrelaxation und Defektbildung in metamorphen III-V Halbleiterheterostrukturen fuer hocheffiziente Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Schoene, Jan

    2009-07-21

    The paper discusses the further development of monolithic III-V multiple solar cells with three pn transitions for applications in concentrating PV systems. These triple solar cells consist of a GaInP upper cell, a GaInAs middle cell and a germanium lower cell, which are connected via electrically conducting and optically transparent tunnel diodes. Efficiencies are higher than 40 % with concentrated light. Demands on materials for III-V high-efficiency solar cells are extremely high. Especially in the metamorphic triple solar cell, for which compound semiconductors with different interatomic distances are deposited epitactically on each other, crystal defects may occur that impair the performance of the solar cell. The use of appropriate layer growing concepts may manipulate the formation of crystal defects and minimize their influence on solar cell performance. Both conventional and high-resolution transmission electron microscopy (TEM and HRTEM) as well as high-resolution X-ray diffraction (HRXRD) were applied successfully for investigating defect formation and layer stresses. In the investigations described, these methods were applied to develop a high-efficiency triple solar cell with a world first efficiency of 41.1 percent in concentrated light. [German] Diese Arbeit beschaeftigt sich mit der Weiterentwicklung von monolithischen III-V-Mehrfach-Solarzellen mit drei pn-Uebergaengen fuer die Anwendung in konzentrierenden Photovoltaiksystemen. Diese Tripelsolarzellen bestehen aus einer GaInP-Oberzelle, einer GaInAs-Mittelzelle und einer Germanium-Unterzelle, die mittels elektrisch leitender und optisch transparenter Tunneldioden verbunden sind. Derartige Solarzellen erzielen mittlerweile Rekordwirkungsgrade von mehr als 40 % unter konzentriertem Licht. Bei den III-V Hocheffizienzsolarzellen sind die Anforderungen an die Materialqualitaet ausserordentlich hoch. Insbesondere bei der metamorphen Tripelsolarzelle, bei der Verbindungshalbleiter mit unterschiedlichen

  15. Experimental investigation of phase equilibria in the Zr-Cu-Ni ternary system

    International Nuclear Information System (INIS)

    Yang, Mujin; Wang, Cuiping; Yang, Shuiyuan; Shi, Zhan; Han, Jiajia; Liu, Xingjun

    2017-01-01

    The phase equilibria in the Zr-Cu-Ni ternary system are investigated combined with X-ray diffraction, electron probe micro-analysis and differential scanning calorimetry. Two isothermal sections of the Zr-Cu-Ni ternary system at 1 000 C and 1 100 C are experimentally established. Most of the binary intermetallic compounds, e.g. Zr 7 Ni 10 , ZrNi, ZrNi 5 , Zr 14 Cu 51 , and Zr 2 Cu 9 , show a remarkable ternary solubility. A new ternary compound named τ 3 (Zr 31.1-30.7 . Cu 28.5-40.3 Ni 40.4-29.0 ) is detected at 1 000 C and dissolved at 1 020 C because the nearby large liquid phase field further expands. The newly determined phase equilibria will provide important information for both thermodynamic assessment and alloy design of Zr-based metallic glass.

  16. Experimental investigation of the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases

    International Nuclear Information System (INIS)

    Mashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.

    2013-01-01

    Highlights: ► The self-consistent phase diagram of the Ag–Bi–I system is constructed. ► Ag 2 BiI 5 and AgBi 2 I 7 are the only ternary phases of the system. ► Standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 are calculated. - Abstract: The phase equilibriums in the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases were experimentally determined by using DTA and XRD techniques and EMF measurements with the Ag 4 RbI 5 solid electrolyte. According to the obtained experimental results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liquids surface have been revised. The fields of the primary crystallization and types and coordinates of nonvariant and monovariant equilibriums were determined. The partial molar functions of silver iodide and silver in the alloys as well as the standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 were calculated based on EMF measurements.

  17. An investigation of the ternary system Nb-Ti-Al

    International Nuclear Information System (INIS)

    Kaltenbach, K.; Gama, S.

    1984-01-01

    The binary systems Nb-Ti, Nb-Al and Al-Ti as well the ternary system Nb-Ti-Al were studied by the aid of arc-beam melted alloys. The as-cast alloys and samples heat treated at 1200 0 C were examined and the liquidus surface projection, an isothermal section at 1200 0 C and the reaction scheme of the system Nb-Ti-Al were constructed. The phase relations of the binary systems Nb-Ti and Nb-Al were confirmed, in the system Al-Ti still some examinations are necessary to resolve the existing uncertainties. The melting process of Nb-Ti alloys in the electron-beam furnace has been studied. (Author) [pt

  18. A review of III-V planar nanowire arrays: selective lateral VLS epitaxy and 3D transistors

    Science.gov (United States)

    Zhang, Chen; Miao, Xin; Chabak, Kelson D.; Li, Xiuling

    2017-10-01

    Nanowires have long been regarded as a promising architecture for beyond Si CMOS logic, future III-V RF electronics, next generation optoelectronic applications, as well as heterogeneous integration. The inherent 3D structure also enables new device concepts that are otherwise not accessible with conventional technology. Nanowires grown using bottom-up epitaxial methods such as metalorganic chemical vapor deposition are free of ion-induced damage, which is especially critical for III-V because of the irreversibility of such damage, and can be scaled to dimensions smaller than lithographically defined. The challenges for nanowire based devices have been the controllability and compatibility with Si CMOS manufacturing. The discovery of parallel arrays of planar III-V nanowire growth mode provides an in-plane nanowire configuration that is perfectly compatible with existing planar processing technology for industry. The selective lateral epitaxy nature guided by the metal nanoparticles via the vapor-liquid-solid (VLS) mechanism opens up a new paradigm of crystal growth and consequently enabled in situ lateral and radial junctions. In this article, we review the planar nanowire based transistor development, particularly, planar III-As compound semiconductor based transistors enabled by this bottom-up self-assembled selective lateral VLS mechanism. We first review the characteristics and mechanism of planar nanowire growth, then focus on the growth, fabrication, and DC and RF performance of metal-semiconductor field-effect transistors, metal-oxide semiconductor field-effect transistors, and high electron mobility transistors (HEMTs), before providing our perspective on future development.

  19. Improved Electron Yield and Spin-Polarization from III-V Photocathodes via Bias Enhanced Carrier Drift: Final Report

    International Nuclear Information System (INIS)

    Mulhollan, Gregory A.

    2006-01-01

    In this DOE STTR program, Saxet Surface Science, with the Stanford Linear Accelerator Center as partner, designed, built and tested photocathode structures such that optimal drift-enhanced spin-polarization from GaAs based photoemitters was achieved with minimal bias supply requirements. The forward bias surface grid composition was optimized for maximum polarization and yield, together with other construction parameters including doping profile. This program has culminated in a cathode bias structure affording increased electron spin polarization when applied to III-V based photocathodes. The optimized bias structure has been incorporated into a cathode mounting and biasing design for use in a polarized electron gun.

  20. Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

    International Nuclear Information System (INIS)

    Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

    1988-01-01

    A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

  1. Spin physics and transport in narrow-gap III-V based heterostructures and epilayers

    CERN Document Server

    Rowe, A C H

    2000-01-01

    mixing of the first subband SdH series and a magneto-intersubband oscillation, the onset of which occurs when the Fermi energy is close to the bottom of the second subband. It is only at the lowest concentrations where the well asymmetry is minimal that beat patterns due to two narrowly split SdH series are observed. This splitting energy is found to be dependent on magnetic field, dropping from approx 4.8 meV at B = 0 T to approx 3.2 meV at B 1.3 T. In contrast, no beating is found in gated InAs/AISb wells at 4.2K over the largest concentration range yet reported in a single sample (4.8x10 sup 1 sup 1 cm sup - sup 2 < n < 2.4x10 sup 1 sup 2 cm sup - sup 2). The Heusler alloy NiMnSb is identified as a candidate for an electrical spin injector for InAs. A simple technique for the fabrication of bulk NiMnSb targets for laser ablation is detailed, and attempts at laser ablation of NiMnSb thin films are reported. Oxygen is identified as the major contaminant for the production of stoichiometric films. High ...

  2. 30 CFR 57.22202 - Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines).

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Main fans (I-A, I-B, I-C, II-A, III, V-A, and V... Main fans (I-A, I-B, I-C, II-A, III, V-A, and V-B mines). (a) Main fans shall be— (1) Installed on the... mines, provided with an automatic signal device to give an alarm when the fan stops. The signal device...

  3. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

    Directory of Open Access Journals (Sweden)

    N. Daix

    2014-08-01

    Full Text Available We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

  4. Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies

    Science.gov (United States)

    Rehman, Gul; Shafiq, M.; Saifullah; Ahmad, Rashid; Jalali-Asadabadi, S.; Maqbool, M.; Khan, Imad; Rahnamaye-Aliabad, H.; Ahmad, Iftikhar

    2016-07-01

    The correct band gaps of semiconductors are highly desirable for their effective use in optoelectronic and other photonic devices. However, the experimental and theoretical results of the exact band gaps are quite challenging and sometimes tricky. In this article, we explore the electronic band structures of the highly desirable optical materials, III-V semiconductors. The main reason of the ineffectiveness of the theoretical band gaps of these compounds is their mixed bonding character, where large proportions of electrons reside outside atomic spheres in the intestinal regions, which are challenging for proper theoretical treatment. In this article, the band gaps of the compounds are revisited and successfully reproduced by properly treating the density of electrons using the recently developed non-regular Tran and Blaha's modified Becke-Johnson (nTB-mBJ) approach. This study additionally suggests that this theoretical scheme could also be useful for the band gap engineering of the III-V semiconductors. Furthermore, the optical properties of these compounds are also calculated and compared with the experimental results.

  5. A direct thin-film path towards low-cost large-area III-V photovoltaics

    Science.gov (United States)

    Kapadia, Rehan; Yu, Zhibin; Wang, Hsin-Hua H.; Zheng, Maxwell; Battaglia, Corsin; Hettick, Mark; Kiriya, Daisuke; Takei, Kuniharu; Lobaccaro, Peter; Beeman, Jeffrey W.; Ager, Joel W.; Maboudian, Roya; Chrzan, Daryl C.; Javey, Ali

    2013-01-01

    III-V photovoltaics (PVs) have demonstrated the highest power conversion efficiencies for both single- and multi-junction cells. However, expensive epitaxial growth substrates, low precursor utilization rates, long growth times, and large equipment investments restrict applications to concentrated and space photovoltaics (PVs). Here, we demonstrate the first vapor-liquid-solid (VLS) growth of high-quality III-V thin-films on metal foils as a promising platform for large-area terrestrial PVs overcoming the above obstacles. We demonstrate 1–3 μm thick InP thin-films on Mo foils with ultra-large grain size up to 100 μm, which is ~100 times larger than those obtained by conventional growth processes. The films exhibit electron mobilities as high as 500 cm2/V-s and minority carrier lifetimes as long as 2.5 ns. Furthermore, under 1-sun equivalent illumination, photoluminescence efficiency measurements indicate that an open circuit voltage of up to 930 mV can be achieved, only 40 mV lower than measured on a single crystal reference wafer. PMID:23881474

  6. Scalable, epitaxy-free fabrication of super-absorbing sparse III-V nanowire arrays for photovoltaic applications (Conference Presentation)

    Science.gov (United States)

    Cheng, Wen-Hui; Fountaine, Katherine T.; Bukowsky, Colton R.; Atwater, Harry A.

    2016-09-01

    III-V compound semiconductor nanowire arrays are promising candidates for photovoltaics applications due to their high volumetric absorption. Uniform nanowire arrays exhibit high absorption at certain wavelengths due to strong coupling into lossy waveguide modes. Previously, simulations predicted near-unity, broadband absorption in sparse semiconductor nanowire arrays (Polymer-embedded wires are removed from the bulk InP substrate by a mechanical method that facilitates extensive reuse of a single bulk InP wafer to synthesize many polymer-embedded nanowire array thin films. Arrays containing multiple nanowire radii and tapered nanowires were successfully fabricated. For both designs, the polymer-embedded arrays achieved 90% broadband absorption (λ=400-900 nm) in less than 100 nm planar equivalence of InP. The addition of a silver back reflector increased this broadband absorption to 95%. The repeatable process of imprinting, etching and peeling to obtain many nanowire arrays from one single wafer represents an economical manufacturing route for high efficiency III-V photovoltaics. [1] K.T. Fountaine, C.G. Kendall, Harry A. Atwater, "Near-unity broadband absorption designs for semiconducting nanowire arrays via localized radial mode excitation," Opt. Exp. (2014).

  7. The ternary system: Silicon-tantalum-uranium

    Energy Technology Data Exchange (ETDEWEB)

    Rogl, Peter, E-mail: peter.franz.rogl@univie.ac.a [Institute of Physical Chemistry, University of Vienna, A-1090 Wien, Waehringerstrasse 42 (Austria); Noel, Henri [Laboratoire de Chimie du Solide et Materiaux, UMR-CNRS 6226, Universite de Rennes I, Avenue du General Leclerc, F-35042 Rennes, Cedex (France)

    2010-09-01

    Phase equilibria in the ternary system Si-Ta-U have been established in an isothermal section at 1000 {sup o}C by optical microscopy, electron probe microanalysis and X-ray diffraction. Two novel ternary compounds were observed and were characterised by X-ray powder Rietveld refinement: stoichiometric {tau}{sub 1}-U{sub 2}Ta{sub 3}Si{sub 4} (U{sub 2}Mo{sub 3}Si{sub 4}-type, P2{sub 1}/c; a = 0.70011(1), b = 0.70046(1), c = 0.68584(1) nm, ss = 109.38(1); R{sub F} = 0.073, X-ray powder Rietveld refinement) and {tau}{sub 2}-U{sub 2-x}Ta{sub 3+x}Si{sub 4} at x {approx} 0.30 (Sc{sub 2}Re{sub 3}Si{sub 4}-type = partially ordered Zr{sub 5}Si{sub 4}-type, P4{sub 1}2{sub 1}2; a = b = 0.69717(3)(1), c = 1.28709(4) nm; R{sub F} = 0.056; X-ray single crystal data). Mutual solubility of U-silicides and Ta-silicides are found to be very small i.e. below about 1 at.%. Due to the equilibrium tie-line Ta{sub 2}Si-U(Ta), no compatibility exists between the U-rich silicides U{sub 3}Si or U{sub 3}Si{sub 2} and tantalum metal. Single crystals obtained from alloys slowly cooled from liquid (2000 {sup o}C), yielded a fully ordered compound U{sub 2}Ta{sub 2}Si{sub 3}C (unique structure type; Pmna, a = 0.68860(1); b = 2.17837(4); c = 0.69707(1) nm; R{sub F2} = 0.048).

  8. Ternary Weighted Function and Beurling Ternary Banach Algebra l1ω(S

    Directory of Open Access Journals (Sweden)

    Mehdi Dehghanian

    2011-01-01

    Full Text Available Let S be a ternary semigroup. In this paper, we introduce our notation and prove some elementary properties of a ternary weight function ω on S. Also, we make ternary weighted algebra l1ω(S and show that l1ω(S is a ternary Banach algebra.

  9. Amorphous phase formation in the Cu{sub 36}Zr{sub 59}A{sub l5} and Cu{sub 48}Zr{sub 43}A{sub l9} ternary alloys studied by molecular dynamics; Estudo da formacao de fase amorfa nas ligas ternarias Cu{sub 36}Zr{sub 59}A{sub l5} e Cu{sub 48}Zr{sub 43}A{sub l9} por dinamica molecular

    Energy Technology Data Exchange (ETDEWEB)

    Aliaga, L.C.R.; Schimidt, C.S.; Lima, L.V.; Domingues, G.M.B.; Bastos, I.N., E-mail: aliaga@iprj.uer.br [Universidade do Estado do Rio de Janeiro (UERJ), Nova friburgo, RJ (Brazil). Departamento de Materiais

    2016-07-01

    Amorphous alloys presents better mechanical and physical properties than its crystalline counterparts. However, there is a scarce understanding on structure - properties relationship in this class of materials. This paper presents the results of the molecular dynamics application to obtain an atomistic description of melting, solidification and the glass forming ability in the ternary Cu{sub 36}Zr{sub 59}A{sub l5} and Cu{sub 48}Zr{sub 43}A{sub l9} alloys. In the study we used the EAM potential and different cooling rates, β = 0.1, 1 and 100 K/ps to form the amorphous phase in a system consisting of 32,000 atoms by using the free code LAMMPS. The solidus and liquidus temperatures, on a heating rate of the 5 K/ps, were obtained. Also, on the cooling down step, it was observed that the glass transition temperature (T{sub g}) decreases as cooling rate increases. The structural evolution was analyzed through the radial distribution functions and Voronoi polyhedra. Furthermore, it was determined the evolution of viscosity upper T{sub g}, as well as the fragility (m) parameter for each amorphous alloy. The thermal parameters of the simulation obtained are compared with those of the experiments. (author)

  10. Phase diagram of the ternary Zr-Ti-Sn system

    International Nuclear Information System (INIS)

    Arias, D.; Gonzalez Camus, M.

    1987-01-01

    It is well known that Ti stabilizes the high temperature cubic phase of Zr and that Sn stabilizes the low temperature hexagonal phase of Zr. The effect of Sn on the Zr-Ti diagram has been studied in the present paper. Using high purity metals, nine different alloys have been prepared, with 4-32 at % Ti, 0.7-2.2 at % Sn and Zr till 100%. Resistivity and optical and SEM metallography techniques have been employed. Effect of some impurities have been analyzed. The results are discussed and different isothermic sections of the ternary Zr-Ti-Sn diagram are presented. (Author) [es

  11. Bandgap and Structure Engineering via Cation Exchange: From Binary Ag2S to Ternary AgInS2, Quaternary AgZnInS alloy and AgZnInS/ZnS Core/Shell Fluorescent Nanocrystals for Bioimaging.

    Science.gov (United States)

    Song, Jiangluqi; Ma, Chao; Zhang, Wenzhe; Li, Xiaodong; Zhang, Wenting; Wu, Rongbo; Cheng, Xiangcan; Ali, Asad; Yang, Mingya; Zhu, Lixin; Xia, Ruixiang; Xu, Xiaoliang

    2016-09-21

    Attention on semiconductor nanocrystals have been largely focused because of their unique optical and electrical properties, which can be applied as light absorber and luminophore. However, the band gap and structure engineering of nanomaterials is not so easy because of their finite size. Here we demonstrate an approach for preparing ternary AgInS2 (AIS), quaternary AgZnInS (AZIS), AgInS2/ZnS and AgZnInS/ZnS nanocompounds based on cation exchange. First, pristine Ag2S quantum dots (QDs) with different sizes were synthesized in one-pot, followed by the partial cation exchange between In(3+) and Ag(+). Changing the initial ratio of In(3+) to Ag(+), reaction time and temperature can control the components of the obtained AIS QDs. Under the optimized conditions, AIS QDs were obtained for the first time with a cation disordered cubic phase and high photoluminescence (PL) quantum yield (QY) up to 32% in aqueous solution, demonstrating the great potential of cation exchange in the synthesis for nanocrystals with excellent optical properties. Sequentially, Zn(2+) ions were incorporated in situ through a second exchange of Zn(2+) to Ag(+)/In(3+), leading to distinct results under different reaction temperature. Addition of Zn(2+) precursor at room temperature produced AIS/ZnS core/shell NCs with successively enhancement of QY, while subsequent heating could obtain AZIS homogeneous alloy QDs with a successively blue-shift of PL emission. This allow us to tune the PL emission of the products from 483 to 675 nm and fabricate the chemically stable QDs core/ZnS shell structure. Based on the above results, a mechanism about the cation exchange for the ternary nanocrystals of different structures was proposed that the balance between cation exchange and diffusion is the key factor of controlling the band gap and structure of the final products. Furthermore, photostability and in vitro experiment demonstrated quite low cytotoxicity and remarkably promising applications in the

  12. Self-consistent tight-binding investigation of chemical trends for native defects in III-V semiconductors

    International Nuclear Information System (INIS)

    Kuehn, W.; Strehlow, R.; Hanke, M.

    1987-01-01

    Using the recently developed charge self-consistent version of the empirical tight-binding method (ETBM) in conjunction with the Koster-Slater scattering-theoretic approach the electronic properties induced by the substitutional native point defects (anion and cation antisite defect, anion and cation vacancy) in the six III-V semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb are investigated. The calculations include the neutral and possible charged states of the defects. Chemical trends in the energetic position of gap states, the orbital composition, and the localization of the defect wave function are discussed and compared with other theoretical and experimental findings. (author)

  13. The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

    Directory of Open Access Journals (Sweden)

    Florent Ravaux

    2017-06-01

    Full Text Available To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM structures of molybdenum (Mo were fabricated on indium phosphide (InP substrate on the top of an indium gallium arsenide (InGaAs layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decrease significantly with the cleaning process. High Resolution Transmission & Scanning Electron Microscopy (HRTEM & HRSTEM investigations revealed that the surface roughness of treated samples was increased. Further analysis of the metal-semiconductor interface using Energy Electron Loss Spectroscopy (EELS showed that the amount of oxides (InxOy, GaxOy or AsxOy was significantly decreased for the etched samples. These results suggest that the low contact resistance obtained after digital etching is attributed to the combined effects of the induced surface roughness and oxides removal during the digital etch process.

  14. Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

    Directory of Open Access Journals (Sweden)

    Bor-Chau Juang

    2017-10-01

    Full Text Available III-(As, Sb alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, digital alloy growth by molecular beam epitaxy has been widely adopted in preference to conventional random alloy growth because of the extra degree of control offered by the ordered alloying. In this article, we provide a comparative study of the optical characteristics of AlAsSb alloys grown lattice-matched to GaSb using both techniques. The sample grown by digital alloy technique showed stronger photoluminescence intensity, narrower peak linewidth, and larger carrier activation energy than the random alloy technique, indicating an improved optical quality with lower density of non-radiative recombination centers. In addition, a relatively long carrier lifetime was observed from the digital alloy sample, consistent with the results obtained from the photoluminescence study.

  15. Experimental determination of the phase equilibria in the Co-Fe-Zr ternary system

    International Nuclear Information System (INIS)

    Wang, C.P.; Yu, Y.; Zhang, H.H.; Hu, H.F.; Liu, X.J.

    2011-01-01

    Research highlights: → We determined four isothermal sections of the Co-Fe-Zr system from 1000 o C to 1300 o C. → No ternary compound was found in the Co-Fe-Zr ternary system. → The solubility of Fe in the liquid phase at 1300 o C is extremely large. → The (Co, Fe) 2 Zr phase form the continuous solution from Co-Zr side to Fe-Zr side. → The solubility of Zr in the fcc (Co, Fe) phase is extremely small. - Abstract: The phase equilibria in the Co-Fe-Zr ternary system were investigated by means of optical microscopy (OM), electron probe microanalysis (EPMA), X-ray diffraction (XRD), and differential scanning calorimetry (DSC) on equilibrated ternary alloys. Four isothermal sections of the Co-Fe-Zr ternary system at 1300 o C, 1200 o C, 1100 o C and 1000 o C were experimentally established. The experimental results indicate that (1) no ternary compound was found in this system; (2) the solubility of Fe in the liquid phase of the Co-rich corner at 1300 o C is extremely large; (3) the liquid phase in the Zr-rich corner and the (Co,Fe) 2 Zr phase form the continuous solid solutions from the Co-Zr side to the Fe-Zr side; (4) the solubility of Zr in the fcc (Co, Fe) phase is extremely small.

  16. Modelling radiation-induced phase changes in binary FeCu and ternary FeCuNi alloys using an artificial intelligence-based atomistic kinetic Monte Carlo approach

    Science.gov (United States)

    Castin, N.; Malerba, L.; Bonny, G.; Pascuet, M. I.; Hou, M.

    2009-09-01

    We apply a novel atomistic kinetic Monte Carlo model, which includes local chemistry and relaxation effects when assessing the migration energy barriers of point defects, to the study of the microchemical evolution driven by vacancy diffusion in FeCu and FeCuNi alloys. These alloys are of importance for nuclear applications because Cu precipitation, enhanced by the presence of Ni, is one of the main causes of hardening and embrittlement in reactor pressure vessel steels used in existing nuclear power plants. Local chemistry and relaxation effects are introduced using artificial intelligence techniques, namely a conveniently trained artificial neural network, to calculate the migration energy barriers of vacancies as functions of the local atomic configuration. We prove, through a number of results, that the use of the neural network is fully equivalent to calculating the migration energy barriers on-the-fly, using computationally expensive methods such as nudged elastic bands with an interatomic potential. The use of the neural network makes the computational cost affordable, so that simulations of the same type as those hitherto carried out using heuristic formulas for the assessment of the energy barriers can now be performed, at the same computational cost, using more rigorously calculated barriers. This method opens the way to properly treating more complex problems, such as the case of self-interstitial cluster formation, in an atomistic kinetic Monte Carlo framework.

  17. Modelling radiation-induced phase changes in binary FeCu and ternary FeCuNi alloys using an artificial intelligence-based atomistic kinetic Monte Carlo approach

    International Nuclear Information System (INIS)

    Castin, N.; Malerba, L.; Bonny, G.; Pascuet, M.I.; Hou, M.

    2009-01-01

    We apply a novel atomistic kinetic Monte Carlo model, which includes local chemistry and relaxation effects when assessing the migration energy barriers of point defects, to the study of the microchemical evolution driven by vacancy diffusion in FeCu and FeCuNi alloys. These alloys are of importance for nuclear applications because Cu precipitation, enhanced by the presence of Ni, is one of the main causes of hardening and embrittlement in reactor pressure vessel steels used in existing nuclear power plants. Local chemistry and relaxation effects are introduced using artificial intelligence techniques, namely a conveniently trained artificial neural network, to calculate the migration energy barriers of vacancies as functions of the local atomic configuration. We prove, through a number of results, that the use of the neural network is fully equivalent to calculating the migration energy barriers on-the-fly, using computationally expensive methods such as nudged elastic bands with an interatomic potential. The use of the neural network makes the computational cost affordable, so that simulations of the same type as those hitherto carried out using heuristic formulas for the assessment of the energy barriers can now be performed, at the same computational cost, using more rigorously calculated barriers. This method opens the way to properly treating more complex problems, such as the case of self-interstitial cluster formation, in an atomistic kinetic Monte Carlo framework.

  18. Modelling radiation-induced phase changes in binary FeCu and ternary FeCuNi alloys using an artificial intelligence-based atomistic kinetic Monte Carlo approach

    Energy Technology Data Exchange (ETDEWEB)

    Castin, N. [Structural Materials Group, Nuclear Materials Science Institute, Kernenergie Centre d' Etude de l' Energie Nucleaire (SCK CEN), Studiecentrum voor, Boeretang 200, 2400 Mol (Belgium); Physique des Solides Irradies et des Nanostructures (PSIN), Universite Libre de Bruxelles (ULB), Boulevard du Triomphe CP234, 1050 Brussels (Belgium); Malerba, L. [Structural Materials Group, Nuclear Materials Science Institute, Kernenergie Centre d' Etude de l' Energie Nucleaire (SCK CEN), Studiecentrum voor, Boeretang 200, 2400 Mol (Belgium)], E-mail: lmalerba@sckcen.be; Bonny, G. [Structural Materials Group, Nuclear Materials Science Institute, Kernenergie Centre d' Etude de l' Energie Nucleaire (SCK CEN), Studiecentrum voor, Boeretang 200, 2400 Mol (Belgium); Laboratory of Theoretical Physics, Universiteit Gent, Proeftuinstraat 86, B-9000 Gent (Belgium); Pascuet, M.I. [Structural Materials Group, Nuclear Materials Science Institute, Kernenergie Centre d' Etude de l' Energie Nucleaire (SCK CEN), Studiecentrum voor, Boeretang 200, 2400 Mol (Belgium); CAC-CNEA, Departamento de Materiales, Avda. Gral. Paz 1499, 1650 San Martin, Pcia. Buenos Aires (Argentina); CONICET, Avda. Rivadavia 1917, 1033 Buenos Aires (Argentina); Hou, M. [Physique des Solides Irradies et des Nanostructures (PSIN), Universite Libre de Bruxelles (ULB), Boulevard du Triomphe CP234, 1050 Brussels (Belgium)

    2009-09-15

    We apply a novel atomistic kinetic Monte Carlo model, which includes local chemistry and relaxation effects when assessing the migration energy barriers of point defects, to the study of the microchemical evolution driven by vacancy diffusion in FeCu and FeCuNi alloys. These alloys are of importance for nuclear applications because Cu precipitation, enhanced by the presence of Ni, is one of the main causes of hardening and embrittlement in reactor pressure vessel steels used in existing nuclear power plants. Local chemistry and relaxation effects are introduced using artificial intelligence techniques, namely a conveniently trained artificial neural network, to calculate the migration energy barriers of vacancies as functions of the local atomic configuration. We prove, through a number of results, that the use of the neural network is fully equivalent to calculating the migration energy barriers on-the-fly, using computationally expensive methods such as nudged elastic bands with an interatomic potential. The use of the neural network makes the computational cost affordable, so that simulations of the same type as those hitherto carried out using heuristic formulas for the assessment of the energy barriers can now be performed, at the same computational cost, using more rigorously calculated barriers. This method opens the way to properly treating more complex problems, such as the case of self-interstitial cluster formation, in an atomistic kinetic Monte Carlo framework.

  19. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Klein, Talysa R.; Jain, Nikhil; Essig, Stephanie; Schulte-Huxel, Henning; Warren, Emily; van Hest, Maikel F. A. M.; Geisz, John; Stradins, Paul; Tamboli, Adele; Rienacker, Michael; Merkle, Agnes; Schmidt, Jan; Brendel, Rolf; Peibst, Robby

    2017-07-11

    Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.

  20. Intensity of adjuvant chemotherapy regimens and grade III-V toxicities among elderly stage III colon cancer patients.

    Science.gov (United States)

    van Erning, F N; Razenberg, L G E M; Lemmens, V E P P; Creemers, G J; Pruijt, J F M; Maas, H A A M; Janssen-Heijnen, M L G

    2016-07-01

    The aim of this study was to provide insight in the use, intensity and toxicity of therapy with capecitabine and oxaliplatin (CAPOX) and capecitabine monotherapy (CapMono) among elderly stage III colon cancer patients treated in everyday clinical practice. Data from the Netherlands Cancer Registry were used. All stage III colon cancer patients aged ≥70 years diagnosed in the southeastern part between 2005 and 2012 and treated with CAPOX or CapMono were included. Differences in completion of all planned cycles, cumulative dosages and toxicity between both regimens were evaluated. One hundred ninety-three patients received CAPOX and 164 patients received CapMono; 33% (n = 63) of the patients receiving CAPOX completed all planned cycles of both agents, whereas 55% (n = 90) of the patients receiving CapMono completed all planned cycles (P characteristics, CapMono was associated with a lower odds of developing grade III-V toxicity than CAPOX (odds ratio 0.54, 95% confidence interval 0.33-0.89). For patients treated with CAPOX, the most common toxicities were gastrointestinal (29%), haematological (14%), neurological (11%) and other toxicity (13%). For patients treated with CapMono, dermatological (17%), gastrointestinal (13%) and other toxicity (11%) were the most common. CAPOX is associated with significantly more grade III-V toxicities than CapMono, which had a pronounced impact on the cumulative dosage received and completion of all planned cycles. In this light, CapMono seems preferable over CAPOX. Copyright © 2016 Elsevier Ltd. All rights reserved.

  1. Data and analyses of phase relations in the Ce-Fe-Sb ternary system.

    Science.gov (United States)

    Zhu, Daiman; Xu, Chengliang; Li, Changrong; Guo, Cuiping; Zheng, Raowen; Du, Zhenmin; Li, Junqin

    2018-02-01

    These data and analyses support the research article "Experimental study on phase relations in the Ce-Fe-Sb ternary system" Zhu et al. (2017) [1]. The data and analyses presented here include the experimental results of XRD, SEM and EPMA for the determination of the whole liquidus projection and the isothermal section at 823 K in the Ce-Fe-Sb system. All the results enable the understanding of the constituent phases and the solidification processes of the as-cast alloys as well as the phase relations and the equilibrium regions at 823 K in the Ce-Fe-Sb ternary system over the entire composition.

  2. True ternary fission in 310126X

    International Nuclear Information System (INIS)

    Banupriya, B.; Vijayaraghavan, K.R.; Balasubramaniam, M.

    2015-01-01

    All possible combinations are minimized by the two dimensional minimization process and minimized with respect to neutron numbers and proton numbers of the fragments. Potential energy is low and Q - value is high at true ternary fission region. It shows that true ternary mode is the dominant mode in the ternary fission of superheavy nuclei. Also, the results show that the fragments with neutron magic numbers are the dominant one in the ternary fission of superheavy nuclei whereas the fragments with proton magic numbers are the dominant one in the ternary fission of heavy nuclei

  3. Phase equilibria of the Mo-Al-Ho ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yitai; Chen, Xiaoxian; Liu, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-08-15

    Investigation into the reactions and phase equilibria of transition metal elements (i.e. Mo, Zr, Cr, V and Ti), Al and rare earths is academically and industrially important for the development of both refractory alloys and lightweight high-temperature materials. In this work, the equilibria of the Mo-Al-Ho ternary system at 773 K have been determined by using X-ray powder diffraction and scanning electron microscopy equipped with energy dispersive X-ray analysis. A new ternary phase Al{sub 4}Mo{sub 2}Ho has been found and the other ternary phase Al{sub 43}Mo{sub 4}Ho{sub 6} is observed. Ten binary phases in the Al-Mo and Al-Ho systems, including Al{sub 17}Mo{sub 4} rather than Al{sub 4}Mo, have been determined to exist at 773 K. The homogeneity ranges of AlMo{sub 3} and Al{sub 8}Mo{sub 3} phase are 7.5 at.% and 1 at.%, respectively. According to the phase-disappearing method, the maximum solubility of Al in Mo is about 16 at.%.

  4. Atomistic approach to predict the glass-forming ability in Zr–Cu–Al ternary metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Yu, C.Y. [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Liu, X.J. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083 (China); Zheng, G.P. [Department of Mechanical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong (China); Niu, X.R. [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China); Liu, C.T., E-mail: chainliu@cityu.edu.hk [Center for Advanced Structural Materials, Department of Mechanical and Biomedical Engineering, College of Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong (China)

    2015-04-05

    Highlights: • An atomistic approach has been developed to predict the glass forming ability (GFA) in Zr–Cu–Al ternary alloy system. • Both of the thermodynamic and structure-dependent kinetic effects to glass formation have been taken into account. • The first-principles calculation and molecular dynamics simulation have been performed. • The approach predicts the best glass former in the model Zr–Cu–Al alloy system. • The predicted GFA is consistent with various experimental results. - Abstract: Prediction of composition-dependent glass-forming ability (GFA) remains to be a key scientific challenge in the metallic-glass community, especially in multi-component alloy systems. In the present study, we apply an atomistic approach to predict the trend of GFA effectively in the Zr–Cu–Al ternary alloy system from alloy compositions alone. This approach is derived from the first-principles calculations based on the density-functional theory and molecular dynamic (MD) simulations. By considering of both the thermodynamic and atomic-structure induced kinetic effects, the predicted GFA trend from this approach shows an excellent agreement with experimental data available in this alloy system, manifesting its capability of seeking metallic glasses with superior GFA in ternary alloy systems.

  5. Neutron scattering on molten Ge-Sn-Te alloys

    Science.gov (United States)

    Halm, Th; Hinz, W.; Hoyer, W.

    1995-01-01

    Three molten ternary Ge-Sn-Te alloys lying on the quasibinary line Ge-SnTe, and the binary equiatomic alloys SnTe and GeTe have been investigated by neutron "time-of-flight" experiments. Published thermodynamic results are interpreted in terms of the coexistence of SnTe and Ge microgroupings in the melt. Using the experimental obtained data of the binary liquid alloy Sn50Te50 and of liquid Ge the structure factors of the ternary melts are calculated on the base of a microheterogeneous model.

  6. Development of High-k Dielectric for Antimonides and a sub 350 degree Celsius III-V pMOSFET Outperforming Germanium

    Science.gov (United States)

    2010-12-01

    Development of high-k dielectric for Antimonides and a sub 350ºC III-V pMOSFET outperforming Germanium Aneesh Nainani, Toshifumi Irisawa, Ze Yuan...dielectric for Antimonides and a sub 350degreeC III-V pMOSFET outperforming Germanium 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...area etch HCl based clean + 100 cyl. ALD Al2O3 @ 300ºC (~10nm) as gate dielectric Aluminum evaporation + Gate patterning Be implant(9e14dose/10keV)+S

  7. Hybrid III-V/SOI single-mode vertical-cavity laser with in-plane emission into a silicon waveguide

    DEFF Research Database (Denmark)

    Park, Gyeong Cheol; Xue, Weiqi; Semenova, Elizaveta

    2015-01-01

    We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold.......We report a III-V-on-SOI vertical-cavity laser emitting into an in-plane Si waveguide fabricated by using CMOS-compatible processes. The fabricated laser operates at 1.54 µm with a SMSR of 33 dB and a low threshold....

  8. 25-Gb/s transmission over 2.5-km SSMF by silicon MRR enhanced 1.55-μm III-V/SOI DML

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ozolins, Oskars

    2017-01-01

    a 11-GHz 1.55-μm directly modulated hybrid III-V/SOI DFB laser realized by bonding III-V materials (InGaAlAs) on a silicon-on-insulator (SOI) wafer and a silicon MRR also fabricated on SOI. Such a transmitter enables error-free transmission (BER... dispersion compensation nor forward error correction (FEC). As both laser and MRR are fabricated on the SOI platform, they could be combined into a single device with enhanced performance, thus providing a cost-effective transmitter for short reach applications....

  9. New insights into thorium and uranium oxo-arsenic (III/V) and oxo-phosphates (V) crystal chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Na

    2015-12-11

    The fundamental chemistry of actinides is of great interest owing to the diverse number of valence states and complex coordination chemistry of the actinides. The phases based on actinides and oxo-salt fragments have been under thorough investigation in the last decades. These compounds can be widely found in nature and they affect the migration process of actinides in nature. A better understanding of the fundamental coordination chemistry of actinide compounds with oxo-salts of group V elements is not only important for understanding the actinides behavior within the migration process but can also be used to understand actinide properties in phosphate ceramics. Concerning the radioactive issues, the less radioactive early actinides (i.e. U, Th) can be taken as modeling elements to study the crystal chemistry of the transuranic elements (Np, Pu) without the major handling problems. This can be done as Th(IV) has a very similar coordination chemistry with An(IV) and U(VI) can be chosen as a modeling element for transuranic elements in higher valence states. Therefore, a systematic research on the actinides (U, Th) bearing phases with tetrahedral oxo-anions such as phosphates and arsenates have been performed in this work. High temperature (HT) solid state reaction, High pressure high temperature (HP-HT) solid state reaction and the hydrothermal method were the methods of choice for synthesizing actinide bearing oxo-arsenic(III/V) and oxo- phosphorus(V) phases in the past three years. As a result, numerous novel compounds containing actinides were obtained. The structures of all compounds were determined using single crystal X-ray diffraction data. Raman spectroscopy, EDS, DSC and high temperature powder X-ray diffraction (HT-PXRD) measurements were implemented to characterize the chemical and physical properties of the obtained compounds. The core of this dissertation is a fundamental study of the crystal chemistry of actinides (Th, U) oxo-arsenic (III/V) and oxo

  10. Ternary Fission Studies by Correlation Measurements with Ternary Particles

    Science.gov (United States)

    Mutterer, Manfred

    2011-10-01

    The rare ternary fission process has been studied mainly by inclusive measurements of the energy distributions and fractional yields of the light charged particles (LCPs) from fission, or by experiments on the angular and energy correlation between LCPs and fission fragments (FFs). The present contribution presents a brief overview of more elaborate correlation measurements that comprise the emission of neutrons and γ rays with LCPs and FFs, or the coincident registration of two LCPs. These measurements have permitted identification of new modes of particle-accompanied fission, such as the population of excited states in LCPs, the formation of neutron-unstable nuclei as short-lived intermediate LCPs, as well as the sequential decay of particle-unstable LCPs and quaternary fission. Furthermore, the neutron multiplicity numbers bar ν (A) and distributions of fragment masses A, measured for the ternary fission modes with various LCP isotopes, give a valuable hint of the role played by nuclear shell structure in the fission process near scission. Finally, two different hitherto unknown asymmetries in ternary α-particle emission with respect to the fission axis, called the TRI and ROT effect, were studied in fission reactions induced by polarised cold neutrons.

  11. Microstructural evolution and thermal stability of aluminum-cerium-nickel ternary eutectic

    Science.gov (United States)

    Fodran, Eric John

    The engineering community has identified several applications in which the use of a lightweight alloy for elevated temperature service, in substitution for current heavier and more costly alloys, would have a substantial benefit. This need for structural materials to perform at elevated temperatures has driven researchers to develop novel alloys as well as processing routes to manufacture them and obtain optimum microstructures. Previous studies on aluminum based binary eutectic systems have proven that the aluminum alloy system shows promising potential for satisfying this need. This has motivated the investigation of the solidification and thermal stability of the Al-12 wt% Ce-5 wt% Ni ternary eutectic performed in this investigation. The solidification behavior of the Al-Ce-Ni ternary eutectic was conducted via solidification of various compositions at and above the eutectic composition in a copper chill mold, thus allowing the observation of various solidification rates on a single ingot. Directional solidification of the ternary eutectic was also conducted to further study the unique microstructures forms. After casting the ingots were analyzed for the composition of phases in the microstructure via X-ray diffraction, and the distribution of the phases determined by scanning electron microscopy. The solidification of the ternary eutectic was found to occur much like that of a faceted/non-faceted binary couples growth. The thermal stability of the microstructure was also studied. Ternary eutectic microstructures were heat treated at various temperatures for time intervals up to 100 hours. The coupled growth microstructures were found to coarsen at temperature above 400°C, which was associated with a loss in hardness. Coarsening of the microstructures at elevated temperatures was also observed to occur by multiple mechanisms: an Ostwald ripening within the eutectic cell, and an accelerated coarsening at the cell boundaries due to increased diffusion at

  12. Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors

    Science.gov (United States)

    Dorsten, J. F.; Maslar, James E.; Zhang, Ying; Rauchfuss, T. B.; Bohn, Paul W.; Agarwala, S.; Adesida, Ilesanmi; Caneau, Catherine; Bhat, Rajaram J.

    1994-07-01

    The nature and disposition of surface states can have a dramatic effect on the near-surface electronic properties in semiconductor heterostructures. In particular the lack of a well-defined surface oxide in III-V materials means that surface band bending can cause surface recombination velocities to be up to 103 larger than in Si-based materials. Raman scattering by coupled longitudinal optic phonons and 2D electron gas electrons in In0.52Al0.48AsIn0.53Ga0.47As (delta) -doped heterostructures is used to demonstrate the extreme sensitivity to surface states. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the L+ mode being identified for the first time in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. In order to passivate native surface states organic thiols are being investigated. Measurements on bulk GaAs indicate a change in the surface depletion region thickness, within the abrupt junction model, of up to 50 angstrom (ca. 30%). Changes in carrier scattering times up to 50% have also been observed.

  13. Coronal Magnetic Field Lines and Electrons Associated with Type III-V Radio Bursts in a Solar Flare

    Science.gov (United States)

    Kishore, P.; Kathiravan, C.; Ramesh, R.; Ebenezer, E.

    2017-06-01

    We recently investigated some of the hitherto unreported observational characteristics of the low frequency (85-35 MHz) type III-V bursts from the Sun using radio spectropolarimeter observations. The quantitative estimates of the velocities of the electron streams associated with the above two types of bursts indicate that they are in the range ≳0.13c-0.02 c for the type V bursts, and nearly constant ({≈ }0.4c) for the type III bursts. We also find that the degree of circular polarization of the type V bursts vary gradually with frequency/heliocentric distance as compared to the relatively steeper variation exhibited by the preceding type III bursts. These imply that the longer duration of the type V bursts at any given frequency (as compared to the preceding type III bursts) which is its defining feature, is due to the combined effect of the lower velocities of the electron streams that generate type V bursts, spread in the velocity spectrum, and the curvature of the magnetic field lines along which they travel.

  14. Proteomic and metabolomic biomarkers for III-V semiconductors: And prospects for application to nano-materials

    International Nuclear Information System (INIS)

    Fowler, Bruce A.; Conner, Elizabeth A.; Yamauchi, Hiroshi

    2008-01-01

    There has been an increased appreciation over the last 20 years that chemical agents at very low dose levels can produce biological responses in protein expression patterns (proteomic responses) or alterations in sensitive metabolic pathways (metabolomic responses). Marked improvements in analytical methodologies, such as 2-D gel electrophoresis, matrix-assisted laser desorption-time of flight (MALDI-TOF) and surface enhanced laser desorption-time of flight (SELDI-TOF) technologies are capable of identifying specific protein patterns related to exposure to chemicals either alone or as mixtures. The detection and interpretation of early cellular responses to chemical agents have also made great advances through correlative ultrastructural morphometric and biochemical studies. Similarly, advances in analytical technologies such as HPLC, proton NMR, MALDI-TOF, and SELDI-TOF have permitted early detection of changes in a number of essential metabolic pathways following chemical exposures by measurement of alterations in metabolic products from those pathways. Data from these approaches are increasingly regarded as potentially useful biomarkers of chemical exposure and early cellular responses. Validation and establishment of linkages to biological outcomes are needed in order for biomarkers of effect to be established. This short review will cover a number of the above techniques and report data from chemical exposures to two binary III-V semiconductor compounds to illustrate gender differences in proteomic responses. In addition, the use of these methodologies in relation to rapid safety evaluations of nanotechnology products will be discussed. (Supported in part by NIH R01-ES4879)

  15. Deep in situ dry-etch monitoring of III-V multilayer structures using laser reflectometry and reflectivity modeling

    CERN Document Server

    Moussa, H; Meriadec, C; Manin, L; Sagnes, I; Raj, R

    2002-01-01

    Deep reactive ion etching of III-V multilayer structures is an important issue for long wavelength vertical cavity surface emitting laser (VCSELs) where full laser structures are usually very thick. Test etchings were performed on GaAs/Al sub x Ga sub 1 sub - sub x As Bragg mirror structures and monitored using laser reflectometry at 651.4 nm. In order to perform very deep etching, up to 9 mu m, we designed and fabricated a special two-level mask made up of a thick nitride layer and a thin nickel layer. The etching rate is a complex function of many parameters and may change from run to run for similar structures. Therefore, it is important to have a method to control accurately the process in situ by continuously matching, experimental curves with the results of the reflectivity modeling. Here, we present a model, based on the Abeles matrix method, of the normal incidence reflectivity of a multilayer stack as a function of etch depth. Comparison between the model and the observed reflectivity variation durin...

  16. Transforming common III-V/II-VI insulating building blocks into topological heterostructure via the intrinsic electric polarization

    Science.gov (United States)

    Zunger, Alex; Zhang, Xiuwen; Abdalla, Leonardo; Liu, Qihang

    Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological heterostructure. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We demonstrate this paradigm of designing TIs from ordinary semiconductors via first-principle calculations on III-V/II-VI superlattice InSb/CdTe. We illustrate the relationship between the interfacial stability and the topological transition, finding a ``window of opportunity'' where both conditions can be optimized. This work illustrates the general principles of co-evaluation of TI functionality with thermodynamic stability as a route of identifying realistic combination of common insulators that could produce topological heterostructures. This work was supported by Basic Energy Science, MSE division (Grant DE-FG02-13ER46959).

  17. Impact of photon recycling and luminescence coupling on III-V single and dual junction photovoltaic devices

    Science.gov (United States)

    Walker, Alexandre W.; Höhn, Oliver; Micha, Daniel N.; Wagner, Lukas; Helmers, Henning; Bett, Andreas W.; Dimroth, Frank

    2015-01-01

    Modeling single junction solar cells composed of III-V semiconductors such as GaAs with the effects of photon recycling yields insight into design and material criteria required for high efficiencies. For a thin-film single junction GaAs cell to reach 28.5% efficiency, simulation results using a recently developed model which accounts for photon recycling indicate that Shockley-Read-Hall (SRH) lifetimes of electrons and holes must be longer than 3 and 1 μs, respectively, in a 2-μm thin active region, and that the native substrate must be removed such that the cell is coupled to a highly reflective rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell's nonradiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14% to 33% experimentally, whereas the model requires increasing electron and hole SRH lifetimes to explain these results. This could be an indication of the saturating defects which mediate the SRH process. However, intermediate GaAs layers between the two subcells may also contribute to the luminescence coupling as a function of concentration.

  18. Controlling and modelling the wetting properties of III-V semiconductor surfaces using re-entrant nanostructures.

    Science.gov (United States)

    Ng, Wing H; Lu, Yao; Liu, Huiyun; Carmalt, Claire J; Parkin, Ivan P; Kenyon, Anthony J

    2018-02-23

    Inorganic semiconductors such as III-V materials are very important in our everyday life as they are used for manufacturing optoelectronic and microelectronic components with important applications span from energy harvesting to telecommunications. In some applications, these components are required to operate in harsh environments. In these cases, having waterproofing capability is essential. Here we demonstrate design and control of the wettability of indium phosphide based multilayer material (InP/InGaAs/InP) using re-entrant structures fabricated by a fast electron beam lithography technique. This patterning technique enabled us to fabricate highly uniform nanostructure arrays with at least one order of magnitude shorter patterning times compared to conventional electron beam lithography methods. We reduced the surface contact fraction significantly such that the water droplets may be completely removed from our nanostructured surface. We predicted the wettability of our patterned surface by modelling the adhesion energies between the water droplet and both the patterned surface and the dispensing needle. This is very useful for the development of coating-free waterproof optoelectronic and microelectronic components where the coating may hinder the performance of such devices and cause problems with semiconductor fabrication compatibility.

  19. Ion beam nanopatterning of III-V semiconductors: consistency of experimental and simulation trends within a chemistry-driven theory.

    Science.gov (United States)

    El-Atwani, O; Norris, S A; Ludwig, K; Gonderman, S; Allain, J P

    2015-12-16

    Several proposed mechanisms and theoretical models exist concerning nanostructure evolution on III-V semiconductors (particularly GaSb) via ion beam irradiation. However, making quantitative contact between experiment on the one hand and model-parameter dependent predictions from different theories on the other is usually difficult. In this study, we take a different approach and provide an experimental investigation with a range of targets (GaSb, GaAs, GaP) and ion species (Ne, Ar, Kr, Xe) to determine new parametric trends regarding nanostructure evolution. Concurrently, atomistic simulations using binary collision approximation over the same ion/target combinations were performed to determine parametric trends on several quantities related to existing model. A comparison of experimental and numerical trends reveals that the two are broadly consistent under the assumption that instabilities are driven by chemical instability based on phase separation. Furthermore, the atomistic simulations and a survey of material thermodynamic properties suggest that a plausible microscopic mechanism for this process is an ion-enhanced mobility associated with energy deposition by collision cascades.

  20. Atomic scale images of acceptors in III-V semiconductors. Band bending, tunneling paths and wave functions

    Energy Technology Data Exchange (ETDEWEB)

    Loth, S.

    2007-10-26

    This thesis reports measurements of single dopant atoms in III-V semiconductors with low temperature Scanning Tunneling Microscopy (STM) and Scanning Tunneling Spectroscopy (STS). It investigates the anisotropic spatial distribution of acceptor induced tunneling processes at the {l_brace}110{r_brace} cleavage planes. Two different tunneling processes are identified: conventional imaging of the squared acceptor wave function and resonant tunneling at the charged acceptor. A thorough analysis of the tip induced space charge layers identifies characteristic bias windows for each tunnel process. The symmetry of the host crystal's band structure determines the spatial distribution of the tunneling paths for both processes. Symmetry reducing effects at the surface are responsible for a pronounced asymmetry of the acceptor contrasts along the principal [001] axis. Uniaxial strain fields due to surface relaxation and spin orbit interaction of the tip induced electric field are discussed on the basis of band structure calculations. High-resolution STS studies of acceptor atoms in an operating p-i-n diode confirm that an electric field indeed changes the acceptor contrasts. In conclusion, the anisotropic contrasts of acceptors are created by the host crystal's band structure and concomitant symmetry reduction effects at the surface. (orig.)

  1. Some new ternary linear codes

    Directory of Open Access Journals (Sweden)

    Rumen Daskalov

    2017-07-01

    Full Text Available Let an $[n,k,d]_q$ code be a linear code of length $n$, dimension $k$ and minimum Hamming distance $d$ over $GF(q$. One of the most important problems in coding theory is to construct codes with optimal minimum distances. In this paper 22 new ternary linear codes are presented. Two of them are optimal. All new codes improve the respective lower bounds in [11].

  2. Density functional theory based screening of ternary alkali-transition metal borohydrides: A computational material design project

    DEFF Research Database (Denmark)

    Hummelshøj, Jens Strabo; Landis, David; Voss, Johannes

    2009-01-01

    We present a computational screening study of ternary metal borohydrides for reversible hydrogen storage based on density functional theory. We investigate the stability and decomposition of alloys containing 1 alkali metal atom, Li, Na, or K (M1); and 1 alkali, alkaline earth or 3d/4d transition...

  3. Homologous series of layered structures in binary and ternary Bi-Sb-Te-Se systems : Ab initio study

    NARCIS (Netherlands)

    Govaerts, K.; Sluiter, M.H.F.; Partoens, B.; Lamoen, D.

    2014-01-01

    In order to account explicitly for the existence of long-periodic layered structures and the strong structural relaxations in the most common binary and ternary alloys of the Bi-Sb-Te-Se system, we have developed a one-dimensional cluster expansion (CE) based on first-principles electronic structure

  4. Nearly Ternary Quadratic Higher Derivations on Non-Archimedean Ternary Banach Algebras: A Fixed Point Approach

    Directory of Open Access Journals (Sweden)

    M. Eshaghi Gordji

    2011-01-01

    Full Text Available We investigate the stability and superstability of ternary quadratic higher derivations in non-Archimedean ternary algebras by using a version of fixed point theorem via quadratic functional equation.

  5. Laser alloyed Al-Ni-Fe coatings

    CSIR Research Space (South Africa)

    Pityana, SL

    2008-10-01

    Full Text Available The aim of this work was to produce crack-free thin surface layers consisting of binary (Al-Ni, Al-Fe) and ternary (Al-Ni-Fe) intermetallic phases by means of a high power laser beam. The laser surface alloying was carried out by melting Fe and Ni...

  6. Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

    Science.gov (United States)

    Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

    2017-06-26

    A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

  7. Error-free Dispersion-uncompensated Transmission at 20 Gb/s over SSMF using a Hybrid III-V/SOI DML with MRR Filtering

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Kamchevska, Valerija; Ding, Yunhong

    2016-01-01

    Error-free 20-Gb/s directly-modulated transmission is achieved by enhancing the dispersion tolerance of a III-V/SOI DFB laser with a silicon micro-ring resonator. Low (∼0.4 dB) penalty compared to back-to-back without ring is demonstrated after 5-km SSMF....

  8. Hydrogen solubility in austenite of Fe-Ni-Cr alloys

    International Nuclear Information System (INIS)

    Zhirnova, V.V.; Mogutnov, B.M.; Tomilin, I.A.

    1981-01-01

    Hydrogen solubility in Fe-Ni-Cr alloys at 600-1000 deg C is determined. Hydrogen solubility in ternary alloys can not be predicted on the basis of the data on its solubility in binary Fe-Ni, Fe-Cr alloys. Chromium and nickel effect on hydrogen solubility in iron is insignificant in comparison with the effect of these elements on carbon or nitrogen solubility [ru

  9. Calculated site substitution in ternary gamma'-Ni3Al: Temperature and composition effects

    DEFF Research Database (Denmark)

    Ruban, Andrei; Skriver, Hans Lomholt

    1997-01-01

    The temperature and composition dependence of the site substitution behavior of ternary additions to Ni3Al is examined on the basis of first-principles calculations of the total energies of ternary, partially ordered (gamma') alloys. The calculations are performed by means of the linear muffin......-tin orbitals method in conjunction with the local-density and multisublattice coherent-potential approximations and include all 3d, 4d, 5d, and noble metals. The calculations show the existence of simple trends in the alloying behavior of the gamma' phase which may be explained in a Friedel-like model based...... diagram for the elements Co, Pd, Cu, and Ag incorrectly has been interpreted as evidence for strong Ni site preference and that, in fact, these elements are expected to exhibit only weak Ni site preference....

  10. Ternary scandium and transition metals germanides

    International Nuclear Information System (INIS)

    Kotur, B.Ya.

    1992-01-01

    Brief review of data on phase diagram of ternary Sc-Me-Ge systems (Me-d - , f-transition element) is given. Isothermal sections at 870 and 1070 K of 17 ternary systems are plotted. Compositions and their structural characteristics are presented. Variability of crystal structure is typical for ternary scandium germanides: 70 compounds with the studied structure belong to 23 structural types. Ternary germanides isostructural to types of Sm 4 Ge 4 , ZrCrSi 2 , ZrNiAl, ScCeSi, TiNiSi U 4 Re 7 Si 6 145 compounds from 70 under investigation are mostly formed in studied systems

  11. Thermodynamic Database for Zirconium Alloys

    International Nuclear Information System (INIS)

    Jerlerud Perez, Rosa

    2003-05-01

    For many decades zirconium alloys have been commonly used in the nuclear power industry as fuel cladding material. Besides their good corrosion resistance and acceptable mechanical properties the main reason of using these alloys is the low neutron absorption. Zirconium alloys are exposed to a very severe environment during the nuclear fission process and there is a demand for better design of this material. To meet this requirement a thermodynamic database is developed to support material designers. In this thesis some aspects about the development of a thermodynamic database for zirconium alloys are presented. A thermodynamic database represents an important facility in applying thermodynamic equilibrium calculations for a given material providing: 1) relevant information about the thermodynamic properties of the alloys e.g. enthalpies, activities, heat capacity, and 2) significant information for the manufacturing process e.g. heat treatment temperature. The basic information in the database is first the unary data, i.e. pure elements; those are taken from the compilation of the Scientific Group Thermodata Europe (SGTE) and then the binary and ternary systems. All phases present in those binary and ternary systems are described by means of the Gibbs energy dependence on composition and temperature. Many of those binary systems have been taken from published or unpublished works and others have been assessed in the present work. All the calculations have been made using Thermo C alc software and the representation of the Gibbs energy obtained by applying Calphad technique

  12. Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping' technique on non-planar III V substrates

    Science.gov (United States)

    Eliás, P.; Strichovanec, P.; Kostic, I.; Novák, J.

    2006-12-01

    A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist layers on non-planar (1 0 0)-oriented III-V substrates, which had a variety of three-dimensional (3D) topographies micromachined in them that consisted, e.g., of mesa ridges confined to side facets with variable tilt, inverted pyramidal holes and stubs confined to perpendicular side facets. All objects were sharp-edged. In each draping experiment, an AZ5214-E sheet was (1) formed floating on the water surface, (2) lowered onto a non-planar substrate and (3) draped over it during drying to form either self-sustained, or conformal, or planarizing layers over the non-planar substrates. The draping process is based on the depression of the glass transition temperature Tg of AZ5214-E material induced by penetrant water molecules that interact with AZ5214-E. During the process, the molecules are initially trapped under an AZ5214-E sheet and then transported out through the sheet via permeation. The water-AZ5214-E interaction modifies the stiffness κ of the sheet. The magnitude of the effect depends on temperature T and on partial water vapour pressure difference p(T, P, κ): the net effect is that Tg = f(C(T, P), p(T, P, κ)) is lowered as the concentration C of water increases with T and p, where P is the permeability of the sheet. The interaction depressed the Tg of the sheets as low as or lower than 53 °C for 6 µm thick sheets. At room temperature T Tg, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As a result, it can either contour or planarize the topography depending on its geometry and thickness of the sheet.

  13. Fast pixelated sensors for radiation detection and imaging based on quantum confined structures in III/V semiconductors

    International Nuclear Information System (INIS)

    Tortora, M.; Biasiol, G.; Cautero, G.; Menk, R.H.; Plaisier, J.R.; Antonelli, M.

    2017-01-01

    In order to improve the characterisation of the delivered beams in many types of photon sources, innovative beam profilers based on III/V semiconductor materials (InGaAs/InAlAs) have been deeply investigated. Owing to a tunable and direct band gap these devices allow radiation detection in a wide spectral range. In order to increase the sensitivity of the device in radiation detection charge amplification on the sensor level is implemented. This is obtained by exploiting In 0.75 Ga 0.25 As/In 0.75 Al 0.25 As quantum wells (QW) hosting a two-dimensional electron gas (2DEG) through molecular beam epitaxy (MBE). Internal charge-amplification mechanism can be achieved for very low applied voltages, while the high carrier mobility allows the design of very fast photon detectors with sub-nanosecond response times. This technology has been preliminarily exploited to fabricate prototype beam profilers with a strip geometry (with 50-μm-wide strips). Tests were carried out both with conventional X-ray tubes and at the Elettra synchrotron facility. The results testify how these profilers are capable of reconstructing the shape of the beam, as well as estimating the position of the beam centroid with a precision of about 400 nm. Further measurements with different samples of decreasing thickness have shown how this precision could be further improved by an optimised microfabrication. For this reason a new design, based on a membrane-photodetector, is proposed. Results regarding the spatial resolution as function of the sensor thickness will be presented and discussed.

  14. On Some Ternary LCD Codes

    OpenAIRE

    Darkunde, Nitin S.; Patil, Arunkumar R.

    2018-01-01

    The main aim of this paper is to study $LCD$ codes. Linear code with complementary dual($LCD$) are those codes which have their intersection with their dual code as $\\{0\\}$. In this paper we will give rather alternative proof of Massey's theorem\\cite{8}, which is one of the most important characterization of $LCD$ codes. Let $LCD[n,k]_3$ denote the maximum of possible values of $d$ among $[n,k,d]$ ternary $LCD$ codes. In \\cite{4}, authors have given upper bound on $LCD[n,k]_2$ and extended th...

  15. The ternary system Zr-Cr-O. Equilibrium diagrams in the zirconium rich zone at different temperatures

    International Nuclear Information System (INIS)

    Gonzalez, Ruben O.; Gribaudo, Luis M.

    2003-01-01

    Equilibria among hcp α, bcc β solid solutions and cubic C 15 type intermetallic ZrCr 2 are represented graphically over Gibbs triangles in the Zr-rich zone of the ternary Zr-Cr-O system. Experimental results are obtained from zirconium-based alloys containing different oxygen compositions (0,24 and 0,62 % at.). Phase boundaries of the ternary system are extrapolated to the Zr-O and Zr-Cr binaries. The obtained values are compared to recently published evaluated diagrams of these two systems. Chromium compositions of the studied alloys were 0,3 - 1 - 2 - 4 and 15 at. %. Thermal treatment temperatures in order to allow equilibria in alloys were 840, 860, 900 and 960 C degrees. (author)

  16. Pulse reversal plating of nickel alloys

    DEFF Research Database (Denmark)

    Tang, Peter Torben

    2007-01-01

    Pulse plating has previously been reported to improve the properties of nickel and nickel alloy deposits. Typically, focus has been on properties such as grain size, hardness and smoothness. When pulse plating is to be utilised for microtechnologies such as microelectromechanical systems (MEMS......), internal stress and material distribution are even more important. With baths based upon nickel chloride, and nickel and cobalt chlorides, pulse reversal plating of both pure nickel and nickel-cobalt alloys has been used to fabricate tools for microinjection moulding. Pulse reversal plating of ternary soft...... magnetic alloys, comprising 45-65%Co, 15-35%Fe and 15-35%Ni, is also reported....

  17. TOPICAL REVIEW: The shallow-to-deep instability of hydrogen and muonium in II VI and III V semiconductors

    Science.gov (United States)

    Cox, S. F. J.

    2003-11-01

    The structure and electrical activity of monatomic hydrogen defect centres are inferred from the spectroscopy and charge-state transitions of muonium, the light pseudo-isotope of hydrogen. Introductions are given to all these topics. Special attention is paid to the shallow-donor behaviour recently established in a number of II VI compounds and one III nitride. This contrasts with trapped-atom states suggestive of an acceptor function in other members of the II VI family as well as with the deep-level amphoteric behaviour which has long been known in the elemental group-IV semiconductors and certain III V compounds. The systematics of this remarkable shallow-to-deep instability are examined in terms of simple chemical considerations, as well as current theoretical and computational models. The muonium data appear to confirm predictions that the switch from shallow to deep behaviour is governed primarily by the depth of the conduction-band minimum below the vacuum continuum. The threshold electron affinity is around 3.5 eV, which compares favourably with computational estimates of a so-called pinning level for hydrogen (+/-) charge-state transitions of between -3 and -4.5 eV. A purely ionic model gives some intuitive understanding of this behaviour as well as the invariance of the threshold. Another current description applies equally to covalent materials and relates the threshold to the origin of the electrochemical scale. At the present level of approximation, zero-point energy corrections to the transition levels are small, so that muonium data should provide a reliable guide to the behaviour of hydrogen. Muonium spectroscopy proves to be more sensitive to the (0/+) donor level than to the (+/-) pinning level but, as a tool which does not rely on favourable hydrogen solubility, it looks set to test further predictions of these models in a large number of other materials, notably oxides. Certain candidate thin-film insulators and high-permittivity gate

  18. III-V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2-4 μm Wavelength Range.

    Science.gov (United States)

    Wang, Ruijun; Vasiliev, Anton; Muneeb, Muhammad; Malik, Aditya; Sprengel, Stephan; Boehm, Gerhard; Amann, Markus-Christian; Šimonytė, Ieva; Vizbaras, Augustinas; Vizbaras, Kristijonas; Baets, Roel; Roelkens, Gunther

    2017-08-04

    The availability of silicon photonic integrated circuits (ICs) in the 2-4 μm wavelength range enables miniature optical sensors for trace gas and bio-molecule detection. In this paper, we review our recent work on III-V-on-silicon waveguide circuits for spectroscopic sensing in this wavelength range. We first present results on the heterogeneous integration of 2.3 μm wavelength III-V laser sources and photodetectors on silicon photonic ICs for fully integrated optical sensors. Then a compact 2 μm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown. High-performance silicon arrayed waveguide grating spectrometers are also presented. Further we show an on-chip photothermal transducer using a suspended silicon-on-insulator microring resonator used for mid-infrared photothermal spectroscopy.

  19. Experimental and thermodynamic study of the Er-H-Zr ternary system

    International Nuclear Information System (INIS)

    Mascaro, A.

    2012-01-01

    This work at CEA is being achieved in the framework of the development of an innovating concept including the neutronic solid burnable poison, such as erbium, inside the cladding of pressurized water reactors. These new claddings are constituted by a liner of a zirconium base alloy slightly enriched in erbium between two liners of industrial zirconium alloys. Into the reactor core, the water dissociates at the surface of the cladding. So it is interesting to evaluate the interactions between the hydrogen released and the Zr-Er alloy. To do so, the Er-H-Zr ternary system has to be determined such similarly to its associated binaries. This can be done by experimental determination and by thermodynamic modelling. Both techniques were used in this work. Er-Zr and H-Zr have already been studied experimentally and modelled, but the Er-H binary system is almost unknown. So, we studied it experimentally. Then, it has been modelled using the Calphad method. We obtain a new evaluation of the Er-H binary system with phases limits rather different than what has been proposed in the literature. In order to determine the phase limits and, the potential existence of a ternary compound in the Er-H-Zr ternary system, an experimental study has been carried out. An original technique has been used to obtain the chemical compositions: ERDA combined with RBS. In this study, we propose a new isothermal section at 350 C of the Er-H-Zr ternary system. About the modelling, the compatibility of the three modelled binaries has been checked in order to optimize the ternary system by the projection of the three binaries. The calculation obtained is in good agreement with the experimental isothermal section at 350 C determined in our work. Finally, uniaxial tensile test campaigns have been conducted to evaluate the impact of erbium and/or hydrogen on the mechanical properties of an industrial zirconium pure alloy. We evidenced a hardening effect of erbium and hydrogen but these effects are not

  20. Optical characterization of one-step synthesis of ternary nanoalloy by laser ablation of stainless steel target in Hexane

    Science.gov (United States)

    Soliman, Wafaa; El-Ansary, Sara; Badr, Yehia

    2017-12-01

    In this work, we ablated stainless steel target in Hexane by 355 nm by tuning laser power to synthesize ternary nanoalloys from its constituents. XRD patterns didn't match with any machine code of carbides, carbonyls and oxides of target elements. Also, they didn't match with any of binary alloys, suggesting the formation of carbides or carbonyls of ternary nanoalloys. In addition, the optical properties of nanoalloys confirms the resonance fluorescence and multistep excitation. By tuning laser power, the shape of nanoalloys is controlled.

  1. A comprehensive study of g-factors, elastic, structural and electronic properties of III-V semiconductors using hybrid-density functional theory

    Science.gov (United States)

    Bastos, Carlos M. O.; Sabino, Fernando P.; Sipahi, Guilherme M.; Da Silva, Juarez L. F.

    2018-02-01

    Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches to yield accurate structural and electronic properties on an equal footing, is due to the unphysical self-interaction problem that mainly affects the band gap and spin-orbit splitting (SOC) in semiconductors and, in particular, III-V systems with similar magnitude of the band gap and SOC. In this work, we report a consistent study of the structural and electronic properties of the III-V semiconductors by using the screening hybrid-density functional theory framework, by fitting the α parameters for 12 different III-V compounds, namely, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, and InSb, to minimize the deviation between the theoretical and experimental values of the band gap and SOC. Structural relaxation effects were also included. Except for AlP, whose α = 0.127, we obtained α values that ranged from 0.209 to 0.343, which deviate by less than 0.1 from the universal value of 0.25. Our results for the lattice parameter and elastic constants indicate that the fitting of α does not affect those structural parameters when compared with the HSE06 functional, where α = 0.25. Our analysis of the band structure based on the k ṡ p method shows that the effective masses are in agreement with the experimental values, which can be attributed to the simultaneous fitting of the band gap and SOC. Also, we estimate the values of g-factors, extracted directly from the band structure, which are close to experimental results, which indicate that the obtained band structure produced a realistic set of k ṡ p parameters.

  2. Atomic models for anionic ligand passivation of cation-rich surfaces of IV-VI, II-VI, and III-V colloidal quantum dots.

    Science.gov (United States)

    Ko, Jae-Hyeon; Yoo, Dongsuk; Kim, Yong-Hyun

    2016-12-22

    We formulated atomic models of cation-rich surfaces passivated with anionic ligands for IV-VI, II-VI, and III-V colloidal quantum dots, employing electron counting models and quantum mechanical calculations. We found that the fractional dangling bonds of cation-rich (100) and (111) surfaces could be greatly stabilized by dimerization-anion passivation and amine-anion co-passivation.

  3. Development of Cu-Hf-Al ternary systems and tungsten wire/particle reinforced Cu48Hf43Al9 bulk metallic glass composites for strengthening

    International Nuclear Information System (INIS)

    Park, Joyoung; An, Jihye; Choi-Yim, Haein

    2010-01-01

    Stable bulk glass forming alloys can be developed over a wide range of compositions in Cu-Hf-Al ternary systems starting from the Cu 49 Hf 42 Al 9 bulk metallic glass. Ternary Cu-Hf-Al alloys can be cast directly from the melt into copper molds to form fully amorphous strips with thicknesses of 1 to 6 mm. The maximum critical diameter of the new Cu-Hf-Al ternary alloy was 6 mm. X-ray diffraction patterns were used to confirm the amorphous nature of the ternary Cu-Hf-Al alloys. To increase the toughness of these metallic glasses, we reinforced the Cu 48 Hf 43 Al 9 bulk metallic glass-forming liquid with a 50% volume fraction of tungsten particles and an 80% volume fraction of tungsten wires with diameters of 242.4 μm. Composites with a critical diameter of 7 mm and length 70 mm were synthesized. The structure of the composites was confirmed by using X-ray diffraction (XRD), and the scanning electron microscopy (SEM). The mechanical properties of the composites were studied in compression tests. The thermal stability and the crystallization processes of the Cu-Hf-Al alloys and composites were investigated by using differential scanning calorimetry (DSC). Values of the glass transition temperature (T g ), the crystallization temperature (T x ), and the supercooled liquid region (ΔT = T x - T g ) are given in this paper.

  4. A high-throughput search for new ternary superalloys

    Science.gov (United States)

    Nyshadham, Chandramouli; Hansen, Jacob; Oses, Corey; Curtarolo, Stefano; Hart, Gus

    In 2006 an unexpected new superalloy, Co3[Al,W], was discovered. This new alloy is cobalt-based, in contrast to conventional superalloys, which are nickel-based. Inspired by this new discovery, we performed first-principles calculations, searching through 2224 ternary metallic systems of the form A3[B0.5C0.5], where A = Ni/Co/Fe and [B, C] = all binary combinations of 40 different elements chosen from the periodic table. We found 175 new systems that are better than the Co3[Al, W] superalloy. 75 of these systems are brand new--they have never been reported in experimental literature. These 75 new potential superalloys are good candidates for further experiments. Our calculations are consistent with current experimental literature where data exists. Work supported under: ONR (MURI N00014-13-1-0635).

  5. Improvement of magnetocaloric properties of Gd-Ge-Si alloys by alloying with iron

    Directory of Open Access Journals (Sweden)

    Erenc-Sędziak T.

    2013-01-01

    Full Text Available The influence of annealing of Gd5Ge2Si2Fex alloys at 1200°C and of alloying with various amount of iron on structure as well as thermal and magnetocaloric properties is investigated. It was found that annealing for 1 to 10 hours improves the entropy change, but reduces the temperature of maximum magnetocaloric effect by up to 50 K. Prolonged annealing of the Gd5Ge2Si2 alloy results in the decrease of entropy change due to the reduction of Gd5Ge2Si2 phase content. Addition of iron to the ternary alloy enhances the magnetocaloric effect, if x = 0.4 – 0.6, especially if alloying is combined with annealing at 1200°C: the peak value of the isothermal entropy change from 0 to 2 T increases from 3.5 to 11 J/kgK. Simultaneously, the temperature of maximum magnetocaloric effect drops to 250 K. The changes in magnetocaloric properties are related to the change in phase transformation from the second order for arc molten ternary alloy to first order in the case of annealed and/or alloyed with iron. The results of this study indicate that the minor addition of iron and heat treatment to Gd-Ge-Si alloys may be useful in improving the materials’ magnetocaloric properties..

  6. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  7. Performance Estimation for Lowpass Ternary Filters

    Directory of Open Access Journals (Sweden)

    O'Shea Peter

    2003-01-01

    Full Text Available Ternary filters have tap values limited to , , or . This restriction in tap values greatly simplifies the multipliers required by the filter, making ternary filters very well suited to hardware implementations. Because they incorporate coarse quantisation, their performance is typically limited by tap quantisation error. This paper derives formulae for estimating the achievable performance of lowpass ternary filters, thereby allowing the number of computationally intensive design iterations to be reduced. Motivated by practical communications systems requirements, the performance measure which is used is the worst-case stopband attenuation.

  8. All-optical symmetric ternary logic gate

    Science.gov (United States)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  9. Investigation of MOS Interfaces with Atomic-Layer-Deposited High-k Gate Dielectrics on III-V Semiconductors

    Science.gov (United States)

    Suri, Rahul

    The purpose of this research work was to investigate the surface passivation methods and metal gate/high-k dielectric gate stacks for metal-oxide-semiconductor devices (MOS) on III-V compound semiconductor materials -- (i) GaAs for future high-speed low-power logic devices and (ii) AlGaN/GaN heterostructure for future high-speed high-power devices. GaAs is a candidate material for high-mobility channel in a NMOS transistor to extend the CMOS scaling up to and beyond the 16-nm technology node. AlGaN/GaN heterostructure is useful in a MOS-high electron mobility transistor (MOS-HEMT) device for providing a high current-carrying two dimensional electron gas (2DEG) channel. The interaction of GaAs surface with atomic layer deposition of high- k dielectrics was investigated to gain fundamental insights into the chemical properties of GaAs surface oxides and high-k/GaAs interface. Electrical characterization of devices was performed to understand the impact of high-k/GaAs interface on MOS device characteristics in order to form a suitable metal/high-k/GaAs gatestack for future high-speed logic and power devices. Reduction of native oxides on GaAs was found to occur during atomic layer deposition (ALD) of high-k dielectrics- HfO2 and Al2O3/HfO 2 nanolaminates on GaAs. Reaction between ALD metal precursor and native oxides on GaAs was identified to be the cause for consumption of native oxides. It was established that the ALD growth temperature has a strong impact on this phenomenon. During post-dielectric annealing the residual arsenic oxides at the interface decomposed leading to an increase in the interfacial gallium oxides. Presence of gallium oxide, Ga2O3 was identified as a cause for observed frequency dispersion in MOS capacitance-voltage curves indicative of a high interface state density. The chemical properties of the AlGaN/GaN heterostructure surface prepared by wet chemical treatment using HCl/HF and NH4OH solutions were investigated and compared. Both HCl and

  10. Ternary fission and cluster radioactivities

    CERN Document Server

    Poenaru, D N; Greiner, W; Gherghescu, R A; Hamilton, J H; Ramayya, A V

    2002-01-01

    Ternary fission yield for different kinds of light particle accompanied fission processes is compared to the Q-values for the corresponding cold phenomena, showing a striking correlation. The experimental evidence for the existence of a quasimolecular state in sup 1 sup 0 Be accompanied fission of sup 2 sup 5 sup 2 Cf may be explained using a three-center phenomenological model which generates a third minimum in the deformation energy at a separation distance very close to the touching point. This model is a natural extension of the unified approach to three groups of binary decay modes (cold fission, cluster radioactivities and alpha decay), illustrated by sup 2 sup 3 sup 4 U decay modes, and the alpha valley on the potential energy surfaces of sup 1 sup 0 sup 6 Te. New measurements of cluster decay modes, confirming earlier predictions within analytical superasymmetric fission model, are included in a comprehensive half-life systematics. (authors)

  11. Coercivity enhancement in HDDR near-stoichiometric ternary Nd–Fe–B powders

    International Nuclear Information System (INIS)

    Wan, Fangming; Han, Jingzhi; Zhang, Yinfeng; Wang, Changsheng; Liu, Shunquan; Yang, Jinbo; Yang, Yingchang; Sun, Aizhi; Yang, Fuqiang; Song, Renbo

    2014-01-01

    Anisotropic HDDR near-stoichiometric ternary Nd–Fe–B powders have been prepared. The coercivity of the powders was improved from 208.6 to 980.1 kA/m by the subsequent diffusion treatment using the Pr–Cu alloy. For comparison, Nd 11.5 Fe 80.7 B 6.1 Pr 1.2 Cu 0.5 alloy, in which Pr and Cu elements were directly added into the original Nd–Fe–B alloy, was also treated by the same HDDR process and the coercivity was only 557.3 kA/m. Microstructural investigations showed that a large area of (Nd, Pr)-rich phases concentrated at triangle regions in the HDDR Nd 11.5 Fe 80.7 B 6.1 Pr 1.2 Cu 0.5 powders, while the (Nd, Pr)-rich phases distributed uniformly in the diffusion treated powders. The uniform grain boundary layer can pin the motion of domain wall more effectively, resulting in a higher coercivity in diffusion treated HDDR Nd–Fe–B powders. - Highlights: • Anisotropic HDDR near-stoichiometric ternary Nd–Fe–B powders have been prepared. • The coercivity of the powders was improved from 2.62 to 12.31 kOe by the diffusion of Pr–Cu alloy. • The uniform grain boundary layer leads to a higher coercivity in diffusion treated powders

  12. Ternary alloys based on ii-vi semiconductor compounds

    CERN Document Server

    Tomashyk, Vasyl; Shcherbak, Larysa

    2013-01-01

    Phase Equilibria in the Systems Based on ZnSSystems Based on ZnSeSystems Based on ZnTeSystems Based on CdSSystem Based on CdSeSystem Based on CdTeSystems Based on HgSSystems Based on HgSeSystems Based on HgTeIndexReferences appear at the end of each chapter.

  13. Ternary alloy material prediction using genetic algorithm and cluster expansion

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chong [Iowa State Univ., Ames, IA (United States)

    2015-12-01

    This thesis summarizes our study on the crystal structures prediction of Fe-V-Si system using genetic algorithm and cluster expansion. Our goal is to explore and look for new stable compounds. We started from the current ten known experimental phases, and calculated formation energies of those compounds using density functional theory (DFT) package, namely, VASP. The convex hull was generated based on the DFT calculations of the experimental known phases. Then we did random search on some metal rich (Fe and V) compositions and found that the lowest energy structures were body centered cube (bcc) underlying lattice, under which we did our computational systematic searches using genetic algorithm and cluster expansion. Among hundreds of the searched compositions, thirteen were selected and DFT formation energies were obtained by VASP. The stability checking of those thirteen compounds was done in reference to the experimental convex hull. We found that the composition, 24-8-16, i.e., Fe3VSi2 is a new stable phase and it can be very inspiring to the future experiments.

  14. Ternary alloys based on II-VI semiconductor compounds

    CERN Document Server

    Tomashyk, Vasyl; Shcherbak, Larysa

    2013-01-01

    Phase Equilibria in the Systems Based on ZnSSystems Based on ZnSeSystems Based on ZnTeSystems Based on CdSSystem Based on CdSeSystem Based on CdTeSystems Based on HgSSystems Based on HgSeSystems Based on HgTeIndexReferences appear at the end of each chapter.

  15. Magnesium and related low alloys

    International Nuclear Information System (INIS)

    Bernard, J.; Caillat, R.; Darras, R.

    1959-01-01

    In the first part the authors examine the comparative corrosion of commercial magnesium, of a magnesium-zirconium alloy (0,4 per cent ≤ Zr ≤ 0,7 per cent) of a ternary magnesium-zinc-zirconium alloy (0,8 per cent ≤ Zn ≤ 1,2 per cent) and of english 'Magnox type' alloys, in dry carbon dioxide-free air, in damp carbon dioxide-free air, and in dry and damp carbon dioxide, at temperatures from 300 to 600 deg. C. In the second part the structural stability of these materials is studied after annealings, of 10 to 1000 hours at 300 to 450 deg. C. Variations in grain after these heat treatments and mechanical stretching properties at room temperature are presented. Finally various creep rate and life time diagrams are given for these materials, for temperatures ranging from 300 to 450 deg. C. (author) [fr

  16. Corrosion resistance improvement of titanium base alloys

    Directory of Open Access Journals (Sweden)

    Mihai V. Popa

    2010-01-01

    Full Text Available The corrosion resistance of the new Ti-6Al-4V-1Zr alloy in comparison with ternary Ti-6Al-4V alloy in Ringer-Brown solution and artificial Carter-Brugirard saliva of different pH values was studied. In Ringer-Brown solution, the new alloy presented an improvement of all electrochemical parameters due to the alloying with Zr; also, impedance spectra revealed better protective properties of its passive layer. In Carter-Brugirard artificial saliva, an increase of the passive film thickness was proved. Fluoride ions had a slight negative influence on the corrosion and ion release rates, without to affect the very good stability of the new Ti-6Al-4V-1Zr alloy.

  17. Synthesis, structural and magnetic characterization of soft magnetic nanocrystalline ternary FeNiCo particles

    Energy Technology Data Exchange (ETDEWEB)

    Toparli, Cigdem [Department of Metallurgical & Materials Eng., Istanbul Technical University, 34469 Istanbul (Turkey); Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf (Germany); Ebin, Burçak [Department of Metallurgical & Materials Eng., Istanbul Technical University, 34469 Istanbul (Turkey); Nuclear Chemistry and Industrial Material Recycling, Department of Chemistry and Chemical Engineering, Chalmers University of Technology, S-412 96 Gothenburg (Sweden); Gürmen, Sebahattin, E-mail: gurmen@itu.edu.tr [Department of Metallurgical & Materials Eng., Istanbul Technical University, 34469 Istanbul (Turkey)

    2017-02-01

    The present study focuses on the synthesis, microstructural and magnetic properties of ternary FeNiCo nanoparticles. Nanocrystalline ternary FeNiCo particles were synthesized via hydrogen reduction assisted ultrasonic spray pyrolysis method in single step. The effect of precursor concentration on the morphology and the size of particles was investigated. The syntheses were performed at 800 °C. Structure, morphology and magnetic properties of the as-prepared products were characterized through X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM) studies. Scherer calculation revealed that crystallite size of the ternary particles ranged between 36 and 60 nm. SEM and TEM investigations showed that the particle size was strongly influenced by the precursor concentration and Fe, Ni, Co elemental composition of individual particles was homogeneous. Finally, the soft magnetic properties of the particles were observed to be a function of their size. - Highlights: • Ternary FeNiCo alloy nanocrystalline particles were synthesized in a single step. • Cubic crystalline structure and spherical morphology was observed by XRD, SEM and TEM investigations. • The analysis of magnetic properties indicates the soft magnetic features of particles.

  18. Volume dependence of T/sub c/ of Ternary A-15 Phases

    International Nuclear Information System (INIS)

    Shamrai, V.

    1984-01-01

    Results are presented of measurements of the superconducting transition temperature T/sub c/, lattice constant a, magnetic susceptibility /sub chi/, and critical field H/sub c/ 2 for many Nb 3 Al and V 3 Si-based ternary phases and Nb 3 SnH/sub x/. For V 3 Si-based ternary systems and Nb 3 SnH/sub x/ the density of states at the Fermi level N(epsilon/sub F/) sharply decreases with the concentration of the alloying element. The variation of N(epsilon/sub F/) in these ternary systems cannot be explained by the variation of a. In ternary phases Nb 3 (Al/sub 1-x/dY/sub x/), where Y can be Ge, Ga, Sb, or Se, a quite clear correlation is revealed between T/sub c/ and a. The dependence of T/sub c/ on V in these systems is due to the variation of the matrix element of the electron-phonon interaction 2 >

  19. Experimental investigation of phase equilibria in the Zr-Cu-Ni ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mujin; Wang, Cuiping; Yang, Shuiyuan; Shi, Zhan; Han, Jiajia; Liu, Xingjun [Xiamen Univ. (China). College of Materials and Fujian Provincial Key Lab. of Materials Genome

    2017-08-15

    The phase equilibria in the Zr-Cu-Ni ternary system are investigated combined with X-ray diffraction, electron probe micro-analysis and differential scanning calorimetry. Two isothermal sections of the Zr-Cu-Ni ternary system at 1 000 C and 1 100 C are experimentally established. Most of the binary intermetallic compounds, e.g. Zr{sub 7}Ni{sub 10}, ZrNi, ZrNi{sub 5}, Zr{sub 14}Cu{sub 51}, and Zr{sub 2}Cu{sub 9}, show a remarkable ternary solubility. A new ternary compound named τ{sub 3} (Zr{sub 31.1-30.7} . Cu{sub 28.5-40.3}Ni{sub 40.4-29.0}) is detected at 1 000 C and dissolved at 1 020 C because the nearby large liquid phase field further expands. The newly determined phase equilibria will provide important information for both thermodynamic assessment and alloy design of Zr-based metallic glass.

  20. Structure and properties of alloys of A15 type compounds with carbon

    International Nuclear Information System (INIS)

    Savitskij, E.M.; Efimov, Yu.V.; Myasnikova, E.A.

    1983-01-01

    Microstructure and some properties of the alloys on the base of the phases of A15 type in the V-Si-C, Nb-Si-C, Nb-Sn-C, Nb-Al-C, Nb-Ga-C, V-Ga-C ternary systems are investigated. It is established that in the niobium-rich corners of the A-B-C ternary systems the new ternary conpounds do not form, as a rule, bUt the wide ranges of threephase equilibrium A-A 3 B-C exist. New ternary phases with A15 type structure stabilized with carbon are established only in the Nb-Si-C and V-Al-C systems. Alloying with carbon results in sharp refining of structural components of stable and metastable alloys, promotes transition of the alloys into amorphous state at super fast cooling of the melts as well as increases stability of metastable state of the alloys against tempering. After super fast quenching and tempering Tsub(c) of the ternary alloys close to the A15 phases exceed Tsub(c) of equilibrium samples

  1. Powder metallurgy preparation of Al-Cu-Fe quasicrystals using mechanical alloying and Spark Plasma Sintering

    Czech Academy of Sciences Publication Activity Database

    Novák, P.; Kubatík, Tomáš František; Vystrčil, J.; Hendrych, R.; Kříž, J.; Mlynár, J.; Vojtěch, D.

    2014-01-01

    Roč. 52, September (2014), s. 131-137 ISSN 0966-9795 Institutional support: RVO:61389021 Keywords : Nanostructure intermetallics * Ternary alloys systems * Mechanical alloying and milling * Sintering * Diffraction Subject RIV: JG - Metallurgy Impact factor: 2.131, year: 2014 http://www.sciencedirect.com/science/article/pii/S0966979514001198#

  2. Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, gap bowing, and effective masses

    DEFF Research Database (Denmark)

    Svane, Axel; Christensen, Niels Egede; Gorczyca, I.

    2010-01-01

    The electronic band structures of InN, GaN, and a hypothetical ordered InGaN2 compound, all in the wurtzite crystal structure, are calculated using the quasiparticle self-consistent GW approximation. This approach leads to band gaps which are significantly improved compared to gaps calculated...... on the basis of the local approximation to density functional theory, although generally overestimated by 0.2–0.3 eV in comparison with experimental gap values. Details of the electronic energies and the effective masses including their pressure dependence are compared with available experimental information....... The band gap of InGaN2 is considerably smaller than what would be expected by linear interpolation implying a significant band gap bowing in InGaN alloys....

  3. Regularity in the formation of compounds in ternary R-Me-Sn systems, R - REM, Me - Fe, Co, Ni, Cu

    International Nuclear Information System (INIS)

    Skolozdra, R.V.; Komarovskaya, L.P.; Koretskaya, O.Eh.

    1992-01-01

    For the ternary alloy systems of (La, Y, Gd, Lu)-Fe-Sn, (Ce, Y, Gd)-Co-Sn, (Ce, Y, Gd, Lu)-Ni-Sn and (Pr, Gd, Lu)-Cu-Sn isothermal sections of phase diagrams were plotted within the range of 670 to 870 K. It was revealed that substitution of transition metal in the kFe-Co-Ni-Cu series led to changes both in a number of ternary stannides and their structural types. A tendency was observed in change of stannide numbers depending on quantity ratio of R and Me components. Crystallochemical analysis of compounds obtained showed that they could be treated as interstitial structures or lsuperstructures with respect to them. The results of magnetic properties measurements were used for explanation of structural features of ternary compounds considered

  4. Ternary networks reliability and Monte Carlo

    CERN Document Server

    Gertsbakh, Ilya; Vaisman, Radislav

    2014-01-01

    Ternary means “based on three”. This book deals with reliability investigations of  networks whose components subject to failures can be in three states –up, down and middle (mid), contrary to traditionally considered networks  having only binary (up/down) components. Extending binary case to ternary allows to consider more realistic and flexible models for communication, flow and supply networks.

  5. Experimental investigation of the ternary system Ni–Pd–Sn with special focus on the B8-type phase

    International Nuclear Information System (INIS)

    Jandl, Isabella; Ipser, Herbert; Richter, Klaus W.

    2015-01-01

    The ternary alloy system Ni–Pd–Sn was investigated experimentally from 700 °C upwards, with special focus on the general NiAs-type compounds. The phase diagram and crystallographic parameters were studied by means of powder X-ray diffraction (XRD), differential thermal analysis (DTA), light optical microscopy (LOM) and scanning electron microscopy (SEM) in combination with energy dispersive X-ray spectroscopy (EDX). An isothermal section at 700 °C was constructed wherein a continuous phase field between the binary NiAs-type compounds γ (PdSn) and Ni 3 Sn 2 (high temperature modification) was detected. A series of samples throughout this phase field was used to investigate lattice parameter variations, occupation of the atomic sites and the melting behaviour. A partial ordering of the transition metals was observed. Moreover, three vertical sections at 30 at.%, 40 at.% and 50 at.% Sn were determined. Altogether, seven ternary invariant phase reactions were discovered: two ternary eutectic reactions, one ternary eutectoid reaction, three ternary transition reactions and one maximum. A complete reaction scheme for the investigated temperature range is given. Furthermore, a partial liquidus surface projection, except for the low-temperature Sn-rich region, was developed. - Highlights: • Detailed study of the ternary alloy system Ni–Pd–Sn. • 1 Isotherm, 3 vertical sections, a partial liquidus projection and a reaction scheme. • A continuous phase field, between γ and Ni 3 Sn 2 , was discovered. • Lattice parameters and structural features in this phase field were analysed. • A partial order of Ni and Pd in this phase field was observed

  6. Calorimetric measurements of the Ca-Li liquid alloys

    Directory of Open Access Journals (Sweden)

    Dębski A.

    2017-01-01

    Full Text Available The ternary Cu-Al-Sn phase diagram is the base for several important types of alloys, with relevant industrial interest and applications. The knowledge of the melting/solidification alloys characteristics are determinant for their preparation and properties control. However, there is a lack of experimental information on the ternary phase diagram, at high temperature. In this work, several alloys, with high copper content and additions of Al, up to 10%, and Sn, up to 14% (in wt%, were studied by thermal analysis and by isothermal phase equilibria determination. The alloys liquidus and solidus lines and the binary α + β phase field, at 800 °C, are presented for the studied range of compositions.

  7. Analysis of phase formation in Ni-rich alloys of the Ni-Ta-W system by calorimetry, DTA, SEM, and TEM

    Energy Technology Data Exchange (ETDEWEB)

    Witusiewicz, V.T.; Hecht, U.; Warnken, N.; Fries, S.G. [Access e.V., Aachen (Germany); Hu Weiping [Inst. fuer Metallkunde und Metallphysik der RWTH Aachen (Germany)

    2006-04-15

    The partial enthalpies of dissolution of pure Ni, W and Ta in liquid ternary Ni-Ta-W alloys have been determined at (1773 {+-} 5) K using a high temperature isoperibolic calorimeter. Measurements were performed in Ni-rich alloys (from 80 to 100 at.% Ni) along sections with constant Ta:W atomic ratios 1:0, 2:1, 1:2, and 0:1. The partial enthalpies and thereby the integral enthalpy of mixing of these ternary alloys are calculated from the partial enthalpies of dissolution using SGTE Gibbs energies for pure elements as reference. The obtained thermochemical data confirm that in the investigated Ni-rich alloys the binary interactions between Ta and W as well as the ternary Ni-Ta-W interactions are negligibly small. Due to this the variation of the integral enthalpy of mixing of the ternary alloys is well described as linear combination of the constituent Ni-Ta and Ni-W binaries. Such behaviour of the ternary liquid alloys is related to a very low probability of new ternary stable phases to occur in solid state. This prediction is confirmed by differential thermal analysis, scanning electron microscopy, and transmission electron microscopy of the as-solidified and annealed samples obtained as last alloy compositions in the series of calorimetric dissolution. (orig.)

  8. High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

    Science.gov (United States)

    Choi, Donghun; Harris, James S.; Kim, Eunji; McIntyre, Paul C.; Cagnon, Joel; Stemmer, Susanne

    2009-03-01

    We describe the molecular-beam epitaxial (MBE) growth and fabrication of III-V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates. We show that high-temperature in-situ H 2 annealing in the chemical-vapor deposition system changes the Ge surface configuration and produces a surface with predominantly double-step-layer conditions, which is crucial for the growth of single-domain GaAs. In addition, the surface morphology of III-V on Ge/Si improved significantly with an annealing treatment of the Ge surface carried out under high arsenic background pressure in the MBE chamber. This facilitates uniform As-monolayer formation on the entire Ge surface. Low-temperature migration-enhanced epitaxy (MEE) and low-temperature conventional GaAs growth not only enhance the growth of single-domain GaAs without Ge outdiffusion but also produce a sufficiently smooth surface for high-k dielectric deposition, achieving low leakage current. A 300-nm-thick GaAs buffer layer was grown, followed by a 10 nm growth of In 0.2Ga 0.8As high-mobility channel layer. A 7-8-nm-thick Al 2O 3 layer was deposited ex-situ by atomic-layer deposition (ALD). We verify the quality of III-V growth using transmission electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) measurement. The C-V characteristics show unpinning of the Fermi level, which is a necessary condition for gate voltage control of the drain current. This work suggests this materials combination is a promising candidate for the realization of advanced, nonclassical complementary-MOS and optoelectronic devices on Si substrates.

  9. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors

    Science.gov (United States)

    2015-08-27

    AFRL-AFOSR-VA-TR-2015-0251 MULTICOLOR ( UV -IR) PHOTODETECTORS BASED ON LATTICE MATCHED 6.1A II/IV AND III/V SEMICONDUCTORS Yong-Hang Zhang ARIZONA...14-05-2015 4. TITLE AND SUBTITLE Multicolor ( UV -IR) Photodetectors Based on Lattic Matched 61A IIIV and IIIV Semiconductors 5a. CONTRACT NUMBER 5b...DISTRIBUTION A: Distribution approved for public release. The Final Report for the ASU/ARL AFOSR Program Multicolor ( UV -IR) photodetectors based on

  10. The excess enthalpies of liquid Ge-Pb-Te alloys

    International Nuclear Information System (INIS)

    Blachnik, R.; Binder, J.; Schlieper, A.

    1997-01-01

    The excess enthalpies of liquid alloys in the ternary system Ge-Pb-Te were determined at 1210 K in a heat flow calorimeter for five sections Ge y Pb 1-y -Te with y = 0.2, 0.4, 0.5, 0.6 and 0.8 and at 1153 K for Ge 0.5 Pb 0.5 -Te. The enthalpy surface in the ternary system is determined by a valley of exothermic minima, stretching from an exothermic minimum at the composition GeTe to one at the composition PbTe in the respective binaries. The excess enthalpies in the limiting metallic binary were adapted with the Redlich-Kister formalism. For the description of the thermodynamic functions in the ternary system the equation of Bonnier was taken using ternary coefficients. The calculated curves are in good agreement with the experimental data. (orig.)

  11. Investigation of new type Cu-Hf-Al bulk glassy alloys

    International Nuclear Information System (INIS)

    Nagy, E; Ronto, V; Solyom, J; Roosz, A

    2009-01-01

    In the last years new type Cu-Hf-Al ternary alloys were developed with high glass forming ability and ductility. The addition of Al to Cu-Hf alloys results in improvements in glass formation, thermal stability and mechanical properties of these alloys. We have investigated new Cu-based bulk amorphous alloys in Cu-Hf-Al ternary system. The alloys with Cu 49 Hf 42 Al 9 , Cu 46 Hf 45 Al 9 , Cu 50 Hf 42.5 Al 7.5 and Cu 50 Hf 45 Al 5 compositions were prepared by arc melting. The samples were made by centrifugal casting and were investigated by X-ray diffraction method. Thermodynamic properties were examined by differential scanning calorimetry and the structure of the crystallising phases by scanning electron microscopy. The determination of liquidus temperatures of alloys were measured by differential thermal analysis.

  12. A study of phase transformations in complex matallic alloys Al73Mn23Pd4 and Al73Mn21Pd6

    Czech Academy of Sciences Publication Activity Database

    Priputen, P.; Černičková, I.; Kusý, M.; Illeková, E.; Švec, P.; Buršík, Jiří; Svoboda, Milan; Dolinšek, J.; Janovec, J.

    2011-01-01

    Roč. 465, - (2011), s. 302-305 ISSN 1013-9826 Institutional research plan: CEZ:AV0Z20410507 Keywords : ternary alloy system * phase transformation * DTA/SEM Subject RIV: BM - Solid Matter Physics ; Magnetism

  13. Defect interactions in Sn1−xGex random alloys

    KAUST Repository

    Chroneos, Alexander

    2009-06-23

    Sn1−xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds with Si or Ge for microelectronic or optoelectronic applications. In the present work electronic structure calculations are used to study relative energies of clusters formed between Sn atoms and lattice vacancies in Ge that relate to alloys of low Sn content. We also establish that the special quasirandom structure approach correctly describes the random alloy nature of Sn1−xGex with higher Sn content. In particular, the calculated deviations of the lattice parameters from Vegard’s Law are consistent with experimental results.

  14. Undercooling and demixing of copper-based alloys

    DEFF Research Database (Denmark)

    Kolbe, M.; Brillo, J.; Egry, I.

    2006-01-01

    Since the beginning of materials science research under microgravity conditions immiscible alloys have been an interesting subject. New possibilities to investigate such systems are offered by containerless processing techniques. Of particular interest is the ternary system Cu-Fe-Co, and its...

  15. Interstitial void structure in Cu Sn liquid alloy as revealed from reverse Monte Carlo modelling

    Science.gov (United States)

    Hoyer, W.; Kleinhempel, R.; Lorinczi, A.; Pohlers, A.; Popescu, M.; Sava, F.

    2005-02-01

    A model for the structure of copper-tin liquid alloy has been developed using the standard reverse Monte Carlo method. The interstitial void structure (size distribution) was analysed. The effects of various kinds of voids (small size and large size) on the interference function and radial distribution function were investigated. Predictions related to the formation of some ternary alloys by filling the interstices of the basic alloy were advanced.

  16. Reduction in thermal conductivity of Bi–Te alloys through grain ...

    Indian Academy of Sciences (India)

    Ternary alloys of thermoelectric materials Bi–Sb–Te and Bi–Se–Te of molecular formula, Bi0.5Sb1.5Te3 ( type) and Bi0.36Se0.064Te0.576 ( type), were prepared by mechanical alloying method. The preparation of materials by mechanical alloying method has effectively reduced the thermal conductivity by generating a ...

  17. A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

    Directory of Open Access Journals (Sweden)

    Katsuaki Tanabe

    2009-07-01

    Full Text Available Solar cells are a promising renewable, carbon-free electric energy resource to address the fossil fuel shortage and global warming. Energy conversion efficiencies around 40% have been recently achieved in laboratories using III-V semiconductor compounds as photovoltaic materials. This article reviews the efforts and accomplishments made for higher efficiency III-V semiconductor compound solar cells, specifically with multijunction tandem, lower-dimensional, photonic up/down conversion, and plasmonic metallic structures. Technological strategies for further performance improvement from the most efficient (AlInGaP/(InGaAs/Ge triple-junction cells including the search for 1.0 eV bandgap semiconductors are discussed. Lower-dimensional systems such as quantum well and dot structures are being intensively studied to realize multiple exciton generation and multiple photon absorption to break the conventional efficiency limit. Implementation of plasmonic metallic nanostructures manipulating photonic energy flow directions to enhance sunlight absorption in thin photovoltaic semiconductor materials is also emerging.

  18. Alloy materials

    Energy Technology Data Exchange (ETDEWEB)

    Hans Thieme, Cornelis Leo (Westborough, MA); Thompson, Elliott D. (Coventry, RI); Fritzemeier, Leslie G. (Acton, MA); Cameron, Robert D. (Franklin, MA); Siegal, Edward J. (Malden, MA)

    2002-01-01

    An alloy that contains at least two metals and can be used as a substrate for a superconductor is disclosed. The alloy can contain an oxide former. The alloy can have a biaxial or cube texture. The substrate can be used in a multilayer superconductor, which can further include one or more buffer layers disposed between the substrate and the superconductor material. The alloys can be made a by process that involves first rolling the alloy then annealing the alloy. A relatively large volume percentage of the alloy can be formed of grains having a biaxial or cube texture.

  19. Calculation of the thermodynamic properties of liquid Ag–In–Sb alloys

    Directory of Open Access Journals (Sweden)

    DRAGANA ZIVKOVIC

    2006-03-01

    Full Text Available The results of calculations of the thermodynamic properties of liquid Ag–In–Sb alloys are presented in this paper. The Redlich–Kister–Muggianu model was used for the calculations. Based on known thermodynamic data for constitutive binary systems and available experimental data for the investigated ternary system, the ternary interaction parameter for the liquid phase in the temperature range 1000–1200 K was determined. Comparison between experimental and calculated results showed their good mutual agreement.

  20. Insight of magnesium alloys and composites for orthopedic implant applications – a review

    Directory of Open Access Journals (Sweden)

    R Radha

    2017-09-01

    Full Text Available Magnesium (Mg and its alloys have been widely researched for orthopedic applications recently. Mg alloys have stupendous advantages over the commercially available stainless steel, Co-Cr-Ni alloy and titanium implants. Till date, extensive mechanical, in-vitro and in-vivo studies have been done to improve the biomedical performance of Mg alloys through alloying, processing conditions, surface modification etc. This review comprehensively describes the strategies for improving the mechanical and degradation performance of Mg alloys through properly tailoring the composition of alloying elements, reinforcements and processing techniques. It also highlights the status and progress of research in to (i the selection of nutrient elements for alloying, reinforcement and its effects (ii type of Mg alloy system (binary, ternary and quaternary and composites (iii grain refinement for strengthening through severe plastic deformation techniques. Furthermore it also emphasizes on the importance of Mg composites with regard to hard tissue applications.

  1. Design of lead-free candidate alloys for high-temperature soldering based on the Au–Sn system

    DEFF Research Database (Denmark)

    Chidambaram, Vivek; Hattel, Jesper Henri; Hald, John

    2010-01-01

    of the Au–Sn binary system were explored in this work. Furthermore, the effects of thermal aging on the microstructure and microhardness of these promising Au–Sn based ternary alloys were investigated. For this purpose, the candidate alloys were aged at a lower temperature, 150°C for up to 1week...

  2. True ternary fission of 252Cf

    International Nuclear Information System (INIS)

    Vijayaraghavan, K.R.; Balasubramaniam, M.; Oertzen, W. von

    2014-01-01

    Splitting of heavy radioactive nucleus into three fragments is known as ternary fission. If the size of the fragments are almost equal it is referred to as true ternary fission. Recently, Yu. V. Pyatkov et al observed/reported the experimental observation of true ternary fission in 252 Cf. In this work, the possibilities of different true ternary fission modes of 252 Cf through potential energy surface (PES) calculations based on three cluster model (TCM) are discussed. In TCM a condition on the mass numbers of the fission fragments is implied as A 1 ≥ A 2 ≥ A 3 in order to avoid repetition of combinations. Due to this condition, the values of Z 3 vary from 0 to 36 and Z 2 vary from 16 to 51. Of the different pairs having similar (Z 2 , Z 3 ) with different potential energy, a pair possessing minimum potential energy is chosen. Thus identified favourable combinations are plotted. For the PES calculations the arrangement of the fragments is considered in the order of A 1 +A 2 +A 3 . i.e. the heavy and the lightest fragments are kept at the ends. It is seen that the deepest minimum in the PES occurs for Z 3 =2 labelled as (Z 2 ; 2) indicating He accompanied breakup as the most favourable one. Of which, the breakup with Z 2 around 46 to 48 is the least (shown by dashed (Z 1 = 50) and dotted (Z 1 = 52) lines indicating a constant Z 1 value). The other notable minima in the PES are labelled and they correspond to the (Z 2 , Z 3 ) pairs viz., (20, 20), (28, 20), (28, 28) and (32, 32). Of these four minima, the first three are associated with the magic numbers 20 and 28. For Z 3 =20, there are two minimums at (20,20) and (28,20) among them (28,20) is the lowest minimum through which the minimum-path passes, and it is the ternary decay observed by Yu. V. Pyatkov et al. The fourth minima is the most interesting due to the fact that it corresponds to true ternary fission mode with Z 2 =32, Z 3 =32 and Z 1 =34. The minimum potential energy path also goes through this true

  3. A Josephson ternary associative memory cell

    International Nuclear Information System (INIS)

    Morisue, M.; Suzuki, K.

    1989-01-01

    This paper describes a three-valued content addressable memory cell using a Josephson complementary ternary logic circuit named as JCTL. The memory cell proposed here can perform three operations of searching, writing and reading in ternary logic system. The principle of the memory circuit is illustrated in detail by using the threshold-characteristics of the JCTL. In order to investigate how a high performance operation can be achieved, computer simulations have been made. Simulation results show that the cycle time of memory operation is 120psec, power consumption is about 0.5 μW/cell and tolerances of writing and reading operation are +-15% and +-24%, respectively

  4. Grain refinement of zinc-aluminium alloys

    International Nuclear Information System (INIS)

    Zaid, A.I.O.

    2006-01-01

    It is now well-established that the structure of the zinc-aluminum die casting alloys can be modified by the binary Al-Ti or the ternary Al-Ti-B master alloys. in this paper, grain refinement of zinc-aluminum alloys by rare earth materials is reviewed and discussed. The importance of grain refining of these alloys and parameters affecting it are presented and discussed. These include parameters related to the Zn-Al alloys cast, parameters related to the grain refining elements or alloys and parameters related to the process. The effect of addition of other alloying elements e.g. Zr either alone or in the presence of the main grain refiners Ti or Ti + B on the grain refining efficiency is also reviewed and discussed. Furthermore, based on the grain refinement and the parameters affecting it, a criterion for selection of the optimum grain refiner is suggested. Finally, the recent research work on the effect of grain refiners on the mechanical behaviour, impact strength, wear resistance, and fatigue life of these alloys are presented and discussed. (author)

  5. Heat storage in alloy transformations. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Birchenall, C E; Gueceri, S I; Farkas, D; Labdon, M B; Nagaswami, N; Pregger, B

    1981-03-01

    A study conducted to determine the feasibility of using metal alloys as thermal energy storage media is described. The study had the following major elements: (1) the identification of congruently transforming alloys and thermochemical property measurements, (2) the development of a precise and convenient method for measuring volume change during phase transformation and thermal expansion coefficients, (3) the development of a numerical modeling routine for calculating heat flow in cylindrical heat exchangers containing phase-change materials, and (4) the identification of materials that could be used to contain the metal alloys. The elements selected as candidate media were limited to aluminum, copper, magnesium, silicon, zinc, calcium, and phosphorus on the basis of low cost and latent heat of transformation. Several new eutectic alloys and ternary intermetallic phases have been determined. A new method employing x-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation from data that are obtained during one continuous experimental test. The method and apparatus are discussed and the experimental results are presented. The development of the numerical modeling method is presented and results are discussed for both salt and metal alloy phase-change media. Candidate materials were evaluated to determine suitable materials for containment of the metal alloys. Graphite was used to contain the alloys during the volume change measurements. Silicon carbide has been identified as a promising containment material and surface-coated iron alloys were considered.

  6. Heat storage in alloy transformations

    Science.gov (United States)

    Birchenall, C. E.

    1980-01-01

    Heats of transformation of eutectic alloys were measured for many binary and ternary systems by differential scanning calorimetry and thermal analysis. Only the relatively cheap and plentiful elements Mg, Al, Si, P, Ca, Cu, Zn were considered. A method for measuring volume change during transformation was developed using x-ray absorption in a confined sample. Thermal expansion coefficients of both solid and liquid states of aluminum and of its eutectics with copper and with silicon also were determined. Preliminary evaluation of containment materials lead to the selection of silicon carbide as the initial material for study. Possible applications of alloy PCMs for heat storage in conventional and solar central power stations, small solar receivers and industrial furnace operations are under consideration.

  7. Effect of alloying on elastic properties of ZrN based transition metal nitride alloys

    KAUST Repository

    Kanoun, Mohammed

    2014-09-01

    We report the effect of composition and metal sublattice substitutional element on the structural, elastic and electronic properties of ternary transition metal nitrides Zr1-xMxN with M=Al, Ti, Hf, V, Nb, W and Mo. The analysis of the elastic constants, bulk modulus, shear modulus, Young\\'s modulus, and Poisson\\'s ratio provides insights regarding the mechanical behavior of Zr1-xMxN. We predict that ternary alloys are more ductile compared to their parent binary compounds. The revealed trend in the mechanical behavior might help for experimentalists on the ability of tuning the mechanical properties during the alloying process by varying the concentration of the transition metal. © 2014 Elsevier B.V.

  8. Vortex Laser based on III-V semiconductor metasurface: direct generation of coherent Laguerre-Gauss modes carrying controlled orbital angular momentum.

    Science.gov (United States)

    Seghilani, Mohamed S; Myara, Mikhael; Sellahi, Mohamed; Legratiet, Luc; Sagnes, Isabelle; Beaudoin, Grégoire; Lalanne, Philippe; Garnache, Arnaud

    2016-12-05

    The generation of a coherent state, supporting a large photon number, with controlled orbital-angular-momentum L = ħl (of charge l per photon) presents both fundamental and technological challenges: we demonstrate a surface-emitting laser, based on III-V semiconductor technology with an integrated metasurface, generating vortex-like coherent state in the Laguerre-Gauss basis. We use a first order phase perturbation to lift orbital degeneracy of wavefunctions, by introducing a weak anisotropy called here "orbital birefringence", based on a dielectric metasurface. The azimuthal symmetry breakdown and non-linear laser dynamics create "orbital gain dichroism" allowing selecting vortex handedness. This coherent photonic device was characterized and studied, experimentally and theoretically. It exhibits a low divergence (50 dB vortex purity), and single frequency operation in a stable low noise regime (0.1% rms). Such high performance laser opens the path to widespread new photonic applications.

  9. Semiconductors. Subvol. A. New data and updates for I-VII, III-V, III-VI and IV-VI compounds

    Energy Technology Data Exchange (ETDEWEB)

    Roessler, U (ed.) [Regensburg Univ. (Germany). Inst. fuer Theoretische Physik; Dietl, T.; Dobrowolski, W.; Story, T. [Polish Academy of Sciences, Warszawa (Poland). Lab. for Cryogenic and Spintronic Research; Fernandes da Silva, E.C. [Universidade de Sao Paulo, SP (Brazil). Lab. de Novos Materiais Semiconductores; Hoenerlage, B. [IPCMS/GONLO, 67 - Strasbourg (France); Meyer, B.K. [Giessen Univ. (Germany). 1. Physikalisches Inst.

    2008-07-01

    The Landolt-Boernstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a ''Systematics of Semiconductor Properties'', which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included. (orig.)

  10. Nb-Based Nb-Al-Fe Alloys: Solidification Behavior and High-Temperature Phase Equilibria

    Science.gov (United States)

    Stein, Frank; Philips, Noah

    2018-03-01

    High-melting Nb-based alloys hold significant promise for the development of novel high-temperature materials for structural applications. In order to understand the effect of alloying elements Al and Fe, the Nb-rich part of the ternary Nb-Al-Fe system was investigated. A series of Nb-rich ternary alloys were synthesized from high-purity Nb, Al, and Fe metals by arc melting. Solidification paths were identified and the liquidus surface of the Nb corner of the ternary system was established by analysis of the as-melted microstructures and thermal analysis. Complementary analysis of heat-treated samples yielded isothermal sections at 1723 K and 1873 K (1450 °C and 1600 °C).

  11. Investigation of as-cast alloys in the Pt-Al-Cr system

    International Nuclear Information System (INIS)

    Suess, R.; Cornish, L.A.; Witcomb, M.J.

    2010-01-01

    Platinum-based alloys are being developed which have microstructures that are analogous to the γ/γ' microstructure of the nickel-based superalloys. These Pt-based alloys have the potential to be used for high-temperature applications. The ternary Pt-Al-Cr system was investigated as part of the continued development of a thermodynamic database for the Pt-Al-Cr-Ru system. Scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) analyses were used to obtain phase equilibria data. The alloys were studied in the as-cast condition. A solidification projection was constructed and a liquidus surface derived. It was concluded that all phase regions were identified correctly since the results were self-consistent. Three ternary phases and 21 ternary invariant reactions were identified.

  12. Synthesis of magnetic orderly mesoporous α-Fe2O3nanocluster derived from MIL-100(Fe) for rapid and efficient arsenic(III,V) removal.

    Science.gov (United States)

    Liu, Zhongmin; Chen, Jitao; Wu, Yongchuan; Li, Yaru; Zhao, Jingyu; Na, Ping

    2018-02-05

    A calcination time regulation method has been unprecedentedly used to adjust the orderly meso-structure of novel α-Fe 2 O 3 nanoclusters derived from MIL-100(Fe) (MIL: Materials of Institute Lavoisier). The as-synthesized magnetic orderly mesoporous α-Fe 2 O 3 nanoclusters were characterized by XRD, SEM, TEM, TGA, N 2 adsorption-desorption isotherms, VSM, Zeta potential, FTIR and XPS. The 6h calcinated α-Fe 2 O 3 nanocluster exhibited the optimal properties, including the high specific surface area and the orderly mesoporous properties, which facilitate the arsenic(III,V) adsorption capacity. The maximum adsorption capacities of As(III) and As(V) were 109.89 and 181.82mgg -1 , respectively, and adsorption equilibrium can be reached just within 30min. The kinetics intra-particle diffusion model and adsorption isotherms reveal that the adsorption rate is controlled by pore diffusion and the adsorption process belongs to Langmuir monolayer adsorption. These results indicate that the orderly mesoporous structure of α-Fe 2 O 3 nanoclusters plays a key role in rapid and efficient adsorption for arsenic(III,V). Meanwhile, adsorption mechanism verifies that arsenic can react with active sites (Fe-OH) to form complexes by Fe-O-As bond. Moreover, α-Fe 2 O 3 nanocluster can be separated easily due to its excellent magnetism. Above all, the magnetism orderly mesoporous α-Fe 2 O 3 nanocluster is a promising adsorbent for emergent treatment of arsenic in practice. Copyright © 2017 Elsevier B.V. All rights reserved.

  13. Mid-term results after operative treatment of rockwood grade III-V Acromioclavicular joint dislocations with an AC-hook-plate

    Directory of Open Access Journals (Sweden)

    Kienast B

    2011-02-01

    Full Text Available Abstract Acromioclavicular joint dislocations often occur in athletic, young patients after blunt force to the shoulder. Several static and dynamic operative procedures with or without primary ligament replacement have been described. Between February 2003 and March 2009 we treated 313 patients suffering from Rockwood III-V lesions of the AC joint with an AC-hook plate. 225 (72% of these patients could be followed up. Mean operation time was 42 minutes in the conventional group and 47 minutes in the minimal invasive group. The postoperative pain on a scale from 1 to 10 (VAS-scale was rated 2.7 in the conventional group and 2.2 in the minimal invasive group. Taft score showed very good and good results in 189 patients (84%. Constant score showed an average of 92.4 of 100 possible points with 89% excellent and good results and 11% satisfying results. All patients had some degree of pain or discomfort with the hookplate in place. These symptoms were relieved after removal of the plate. The overall complication rate was 10.6%. There were 6 superficial soft tissue infections, 1 fracture of the acromion, 7 redislocations after removal of the hook-plate. We observed 4 broken hooks which could be removed at the time of plate removal, 4 seromas and 2 cases of lateral clavicle bone infection, which required early removal of the plate. We can conclude that clavicle hook plate is a convenient device for the surgical treatment of Rockwood Grade III-V dislocations, giving good mid-term results with a low overall complication rate compared to the literature. Early functional therapy is possible and can avoid limitations in postoperative shoulder function.

  14. Size effects in band gap bowing in nitride semiconducting alloys

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2011-01-01

    Chemical and size contributions to the band gap bowing of nitride semiconducting alloys (InxGa1-xN, InxAl1-xN, and AlxGa1-xN) are analyzed. It is shown that the band gap deformation potentials of the binary constituents determine the gap bowing in the ternary alloys. The particularly large gap bo...... bowing in In-containing nitride alloys can be explained by specific properties of InN, which do not follow trends observed in several other binaries....

  15. Indacenodithienothiophene-Based Ternary Organic Solar Cells

    International Nuclear Information System (INIS)

    Gasparini, Nicola; García-Rodríguez, Amaranda; Prosa, Mario; Bayseç, Şebnem; Palma-Cando, Alex; Katsouras, Athanasios; Avgeropoulos, Apostolos; Pagona, Georgia; Gregoriou, Vasilis G.; Chochos, Christos L.; Allard, Sybille; Scherf, Ulrich; Brabec, Christoph J.; Ameri, Tayebeh

    2017-01-01

    One of the key aspects to achieve high efficiency in ternary bulk-hetorojunction solar cells is the physical and chemical compatibility between the donor materials. Here, we report the synthesis of a novel conjugated polymer (P1) containing alternating pyridyl[2,1,3]thiadiazole between two different donor fragments, dithienosilole and indacenodithienothiophene (IDTT), used as a sensitizer in a host system of indacenodithieno[3,2-b]thiophene,2,3-bis(3-(octyloxy)phenyl)quinoxaline (PIDTTQ) and [6,6]-phenyl C 70 butyric acid methyl ester (PC 71 BM). We found that the use of the same IDTT unit in the host and guest materials does not lead to significant changes in the morphology of the ternary blend compared to the host binary. With the complementary use of optoelectronic characterizations, we found that the ternary cells suffer from a lower mobility-lifetime (μτ) product, adversely impacting the fill factor. However, the significant light harvesting in the near infrared region improvement, compensating the transport losses, results in an overall power conversion efficiency enhancement of ~7% for ternary blends as compared to the PIDTTQ:PC 71 BM devices.

  16. Angular distribution in ternary cold fission

    International Nuclear Information System (INIS)

    Delion, D.S.; J.W. Goethe Univ., Frankfurt; Sandulescu, A.; J.W. Goethe Univ., Frankfurt; Greiner, W.

    2003-01-01

    We describe the spontaneous ternary cold fission of 252 Cf, accompanied by 4 He, 10 Be and 14 C. The light cluster decays from the first resonant eigenstate in the Coulomb potential plus a harmonic oscillator potential. We have shown that the angular distribution of the emitted light particle is strongly connected with its deformation and the equatorial distance. (author)

  17. The use of ternary mixtures in concrete.

    Science.gov (United States)

    2014-05-01

    This manual is a summary of the findings of a comprehensive study. Its purpose is to provide engineers with the information they need to make educated decisions on the use of ternary mixtures for constructing concrete structures. It discusses the eff...

  18. Superconducting state parameters of ternary metallic glasses

    Indian Academy of Sciences (India)

    Administrator

    to binary metallic glasses. They are of interest since third element can modify the physical properties of binary metallic glasses and can also be used as a probe to study the host. ..... conducting nature in the present case. When we. Figure 6. Variation of transition temperature (TC) with valance (Z) of ternary metallic glasses.

  19. Self-triggered coordination with ternary controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo

    2012-01-01

    This paper regards coordination of networked systems with ternary controllers. We develop a hybrid coordination system which implements a self-triggered communication policy, based on polling the neighbors upon need. We prove that the proposed scheme ensures finite-time convergence to a neighborhood

  20. The isothermal section at 500 deg. C of the Gd-Tb-Ga ternary system

    International Nuclear Information System (INIS)

    Li, J.Q.; Jian, Y.X.; Ao, W.Q.; Zhuang, Y.H.; He, W.

    2006-01-01

    Phase equilibria in the Gd-Tb-Ga ternary system at 500 deg. C were investigated by X-ray powder diffraction and differential scanning calorimetry. The binary compounds, Gd 5 Ga 3 , Gd 3 Ga 2 , GdGa, GdGa 2 , Tb 5 Ga 3 , TbGa, TbGa 2 and TbGa 3 have been confirmed at 500 deg. C. No ternary compound was found in this system. The isothermal section of this system at 500 deg. C was constructed. It is composed of 7 single-phase regions, 8 two-phase regions and 2 three-phase regions. Four ternary continuous solid solutions (Gd, Tb), (Gd, Tb) 5 Ga 3 , (Gd, Tb)Ga, (Gd, Tb)Ga 2 were formed in this isothermal section. The maximum solid solubilities of Ga in (Gd, Tb) at 500 deg. C is 5.0 at.%. The homogeneity range of (Gd, Tb)Ga 2 is from 20 to 33.3 at.% Ga in Gd-Ga side but limited in Tb-Ga side. The solid solubilities of Ga in the other phases cannot be detected. The Curie temperatures of the Gd 0.6 Tb 0.4-x Ga x alloys increase from 270 to 298 K as x increases from 0 to 0.03

  1. Design of a novel quantum reversible ternary up-counter

    Science.gov (United States)

    Houshmand, Pouran; Haghparast, Majid

    2015-08-01

    Reversible logic has been recently considered as an interesting and important issue in designing combinational and sequential circuits. The combination of reversible logic and multi-valued logic can improve power dissipation, time and space utilization rate of designed circuits. Only few works have been reported about sequential reversible circuits and almost there are no paper exhibited about quantum ternary reversible counter. In this paper, first we designed 2-qutrit and 3-qutrit quantum reversible ternary up-counters using quantum ternary reversible T-flip-flop and quantum reversible ternary gates. Then we proposed generalized quantum reversible ternary n-qutrit up-counter. We also introduced a new approach for designing any type of n-qutrit ternary and reversible counter. According to the results, we can conclude that applying second approach quantum reversible ternary up-counter is better than the others.

  2. Grain refinement of aluminum and its alloys

    International Nuclear Information System (INIS)

    Zaid, A.I.O.

    2001-01-01

    Grain refinement of aluminum and its alloys by the binary Al-Ti and Ternary Al-Ti-B master alloys is reviewed and discussed. The importance of grain refining to the cast industry and the parameters affecting it are presented and discussed. These include parameters related to the cast, parameters related to the grain refining alloy and parameters related to the process. The different mechanisms, suggested in the literature for the process of grain refining are presented and discussed, from which it is found that although the mechanism of refining by the binary Al-Ti is well established the mechanism of grain refining by the ternary Al-Ti-B is still a controversial matter and some research work is still needed in this area. The effect of the addition of other alloying elements in the presence of the grain refiner on the grain refining efficiency is also reviewed and discussed. It is found that some elements e.g. V, Mo, C improves the grain refining efficiency, whereas other elements e.g. Cr, Zr, Ta poisons the grain refinement. Based on the parameters affecting the grain refinement and its mechanism, a criterion for selection of the optimum grain refiner is forwarded and discussed. (author)

  3. Simulation of Concurrent Precipitation of Two Strengthening Phases in Magnesium Alloys

    Science.gov (United States)

    Sun, Weihua; Zhang, Chuan; Klarner, Andrew D.; Cao, Weisheng; Luo, Alan A.

    The precipitation kinetics and microtructure in Mg-Sn binary and Mg-Al-Sn ternary alloys are simulated using PanPrecipitation coupled with Mg thermodynamic database and a newly established mobility database of the Mg-Al-Sn ternary system. Both Mg2Sn and Mg17Al12 precipitates are considered in this work. The obtained kinetic parameters for these two precipitates can be used in the simulation of both individual and concurrent precipitations of Mg17Al12 and Mg2Sn in Mg-Al-Sn alloys. The simulated microstructure evolution, such as the particle size and number density, are in agreement with experimental data.

  4. Electronic modification effects induced by Fe in Pt-Ru-Fe ternary catalyst on the electrooxidation of CO/H₂ and methanol.

    Science.gov (United States)

    Kim, Taeyoon; Kobayashi, Koichi; Take, Tetsuo; Nagai, Masayuki

    2012-01-01

    Electro-oxidation of CO/H₂ and methanol was performed over a carbon supported Pt-Ru-Fe ternary alloy catalyst prepared via the conventional NaBH₄ reduction method. Physicochemical and electrochemical measurements were used to elucidate the respective roles of Ru and Fe in the ternary catalyst, revealing synergistic effects in the Pt-Ru-Fe catalyst on the electro-oxidation of CO/H₂ and methanol. The methanol oxidation activity of Pt₃Ru₂Fe/C was ca. 2.5 times higher than that of PtRu/C at 0.45 V vs. RHE as a result of enhanced CO tolerance. The enhanced CO tolerance of the Pt-Ru-Fe ternary alloy catalysts was derived from the reaction between the high mobility, weakly adsorbed CO on the Pt site that was electronically modified by alloying with Fe and adsorbed water species on the Ru site. This combination of features produced an improvement in the electro-oxidation of CO/H₂ and methanol at lower potential. On the basis of the data, it was proposed that the addition of a water activator such as Ru is indispensible in the design of multicomponent alloy catalysts for methanol oxidation, and the additional effect derived from an electronic modifier is an important factor for improving the CO and methanol oxidation activity of the catalyst containing the water activator.

  5. Contribution to the study of the Fe-Nb-C ternary system

    Science.gov (United States)

    Haddad, F.; Amara, S. E.; Kesri, R.; Hamar-Thibault, S.

    2004-12-01

    In the present paper, solidification sequences are proposed in relation to the observed microstructures for Fe-Nb-C iron based ternary alloys. These alloys are arc melted and characterised by means of differential thermal analysis, scanning electronic microscopy and by quantitative electron probe microanalysis. Thus, an invariant eutectic ternary reaction L ≤ftrightarrow γ + NbC1-x + Fe3C is proposed at 1140°C. Dans cet article, les séquences de solidification sont proposes en relation avec les microstructures observées pour une famille d’alliages ternaires base fer Fe-Nb-C. Ces alliages ont été élaborés dans un four à arc et caractérisés par Analyse Thermique Différentielle, Microscopie Electronique à Balayage et Microsonde Electronique. Ainsi, une réaction invariante ternaire L ≤ftrightarrow γ + NbC1-x + Fe3C est proposée à 1140 °C.

  6. Thermal aging effects in refractory metal alloys

    Science.gov (United States)

    Stephens, Joseph R.

    1987-01-01

    The alloys of niobium and tantalum are attractive from a strength and compatibility viewpoint for high operating temperatures required in materials for fuel cladding, liquid metal transfer, and heat pipe applications in space power systems that will supply from 100 kWe to multi-megawatts for advanced space systems. To meet the system requirements, operating temperatures ranging from 1100 to 1600 K have been proposed. Expected lives of these space power systems are from 7 to 10 yr. A program is conducted at NASA Lewis to determine the effects of long-term, high-temperature exposure on the microstructural stability of several commercial tantalum and niobium alloys. Variables studied in the investigation include alloy composition, pre-age annealing temperature, aging time, temperature, and environment (lithium or vacuum), welding, and hydrogen doping. Alloys are investigated by means of cryogenic bend tests and tensile tests. Results show that the combination of tungsten and hafnium or zirconium found in commercial alloys such as T-111 and Cb-752 can lead to aging embrittlement and increased susceptibility to hydrogen embrittlement of ternary and more complex alloys. Modification of alloy composition helps to eliminate the embrittlement problem.

  7. Probing for missing links in the binary and ternary V(V)-citrate-(H2O2) systems: synthetic efforts and in vitro insulin mimetic activity studies.

    Science.gov (United States)

    Gabriel, C; Venetis, J; Kaliva, M; Raptopoulou, C P; Terzis, A; Drouza, C; Meier, B; Voyiatzis, G; Potamitis, C; Salifoglou, A

    2009-04-01

    In a pH-specific fashion, V(2)O(5) and citric acid in the absence and presence of H(2)O(2) reacted and afforded, in the presence of NaOH and (CH(6)N(3))(2)CO(3), two new dinuclear V(V) binary non-peroxo (CH(6)N(3))(6)[V(2)O(4)(C(6)H(4)O(7))(2)].2H(2)O (1) and ternary peroxo (CH(6)N(3))(4)[V(2)O(2)(Omicron(2))(2)(C(6)H(5)O(7))(2)].6Eta(2)Omicron (2) species, respectively. Complexes 1 and 2 were further characterized by elemental analysis, UV/Vis, FT-IR, NMR (solution and solid state Cross Polarization-Magic Angle Spinning (CP-MAS)) and Raman spectroscopies, cyclic voltammetry, and X-ray crystallography. Both 1 and 2 are members of the family of dinuclear V(V)-citrate species bearing citrate with a distinct coordination mode and degree of deprotonation, with 2 being the missing link in the family of pH-structural variants of the ternary V(V)-peroxo-citrate system. Given that 1 and 2 possess distinct structural features, relevant binary V(III), V(IV) and V(V), and ternary V(V) species bearing O- and N-containing ligands were tested in in vitro cell cultures to assess their cellular toxicity and insulin mimetic capacity. The results project a clear profile for all species tested, earmarking the importance of vanadium oxidation state and its ligand environment in influencing further binary and ternary interactions of vanadium arising with variable mass cellular targets, ultimately leading to a specific (non)toxic phenotype and glucose uptake ability.

  8. Influence of polymer compatibility on the open-circuit voltage in ternary blend bulk heterojunction solar cells.

    Science.gov (United States)

    Khlyabich, Petr P; Rudenko, Andrey E; Street, Robert A; Thompson, Barry C

    2014-07-09

    The evolution of the open-circuit voltage (Voc) with composition in ternary blend bulk heterojunction (BHJ) solar cells is correlated with the miscibility of the polymers. Ternary blends based on poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT) and poly(3-hexylthiophene-thiophene-diketopyrrolopyrrole) (P3HTT-DPP-10%) with phenyl-C61-butyric acid methyl ester (PC61BM) acceptor were investigated. The Voc is pinned to the lower value of the P3HTT-DPP-10%:PC61BM binary blend even up to 95% PCDTBT in the polymer fraction. This is in stark contrast to the previously investigated system based on P3HTT-DPP-10%, poly(3-hexylthiophene-co-3-(2-ethylhexyl)thiophene) (P3HT75-co-EHT25), and PC61BM, where the Voc varied regularly across the full composition range, as explained by an organic alloy model, implying strong physical and electronic interaction between the polymers. Photocurrent spectral response (PSR) and external quantum efficiency (EQE) measurements indicate that the present system does not exhibit the hallmarks of alloy formation. Measured values of the surface energies of the polymers support miscibility of P3HTT-DPP-10% with P3HT75-co-EHT25 but not with PCDTBT. Surface energy is proposed as a figure of merit for predicting alloy formation and compositional dependence of the Voc in ternary blend solar cells and miscibility between polymers is proposed as a necessary attribute for polymer pairs that will display alloy behavior.

  9. Development Program for Natural Aging Aluminum Casting Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Geoffrey K. Sigworth

    2004-05-14

    A number of 7xx aluminum casting alloys are based on the ternary Al-Zn-Mg system. These alloys age naturally to high strength at room temperature. A high temperature solution and aging treatment is not required. Consequently, these alloys have the potential to deliver properties nearly equivalent to conventional A356-T6 (Al-Si-Mg) castings, with a significant cost saving. An energy savings is also possible. In spite of these advantages, the 7xx casting alloys are seldom used, primarily because of their reputation for poor castibility. This paper describes the results obtained in a DOE-funded research study of these alloys, which is part of the DOE-OIT ''Cast Metals Industries of the Future'' Program. Suggestions for possible commercial use are also given.

  10. Superconducting state parameters of ternary metallic glasses

    Indian Academy of Sciences (India)

    Administrator

    When used with a suitable form of dialectic screening functions, this potential has also been found to yield good results in computing the SSP of (Ni33Zr67)1–x ..... superconducting nature. Hence, (Ni33Zr67)1–xMx. (M = Ti, V, Co, Cu) ternary metallic glasses exhibit super- conducting nature in the present case. When we.

  11. Equilibrium study for ternary mixtures of biodiesel

    Science.gov (United States)

    Doungsri, S.; Sookkumnerd, T.; Wongkoblap, A.; Nuchitprasittichai, A.

    2017-11-01

    The liquid-liquid equilibrium (LLE) data for the ternary mixtures of methanol + fatty acid methyl ester (FAME) + palm oil and FAME + palm oil + glycerol at various temperatures from 35 to 55°C, the tie lines and binodial curves were also investigated and plotted in the equilibrium curve. The experimental results showed that the binodial curves of methanol + FAME + palm oil depended significantly with temperature while the binodial curves of FAME + palm oil + glycerol illustrated insignificant change with temperatures. The interaction parameters between liquid pair obtained for NRTL (Nonrandom Two-Liquid) and UNIQUAC (Universal Quasi-Chemical Theory) models from the experimental data were also investigated. It was found that the correlated parameters of UNIQUAC model for system of FAME + palm oil + glycerol, denoted as a13 and a31, were 580.42K and -123.69K, respectively, while those for system of methanol + FAME + palm oil, denoted as a42 and a24, were 71.48 K and 965.57K, respectively. The ternary LLE data reported here would be beneficial for engineers and scientists to use for prediction of yield and purity of biodiesel for the production. The UNIQUAC model agreed well with the experimental data of ternary mixtures of biodiesel.

  12. The development of platinum-based alloys and their thermodynamic database

    OpenAIRE

    Cornish L.A.; Hohls J.; Hill P.J.; Prins S.; Süss R.; Compton D.N.

    2002-01-01

    A series of quaternary platinum-based alloys have been demonstrated to exhibit the same two-phase structure as Ni-based superalloys and showed good mechanical properties. The properties of ternary alloys were a good indication that the quaternary alloys, with their better microstructure, will be even better. The quaternary alloy composition has been optimised at Pt84:Al11:Ru2:Cr3 for the best microstructure and hardness. Work has begun on establishing a thermodynamic database for Pt-Al-Ru-Cr ...

  13. Advanced methods for preparation and characterization of infrared detector materials. [mercury cadmium telluride alloys

    Science.gov (United States)

    Lehoczky, S. L.; Szofran, F. R.

    1981-01-01

    Differential thermal analysis data were obtained on mercury cadmium telluride alloys in order to establish the liquidus temperatures for the various alloy compositions. Preliminary theoretical analyses was performed to establish the ternary phase equilibrium parameters for the metal rich region of the phase diagram. Liquid-solid equilibrium parameters were determined for the pseudobinary alloy system. Phase equilibrium was calculated and Hg(l-x) Cd(x) Te alloys were directionally solidified from pseudobinary melts. Electrical resistivity and Hall coefficient measurements were obtained.

  14. Design of ternary clocked adiabatic static random access memory

    Science.gov (United States)

    Pengjun, Wang; Fengna, Mei

    2011-10-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

  15. Design of ternary clocked adiabatic static random access memory

    International Nuclear Information System (INIS)

    Wang Pengjun; Mei Fengna

    2011-01-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions. (semiconductor integrated circuits)

  16. Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

    Directory of Open Access Journals (Sweden)

    Molina-Aldareguia Jon

    2011-01-01

    Full Text Available Abstract Nanostructuring of ultrathin HfO2 films deposited on GaAs (001 substrates by high-resolution Lloyd's mirror laser interference nanolithography is described. Pattern transfer to the HfO2 film was carried out by reactive ion beam etching using CF4 and O2 plasmas. A combination of atomic force microscopy, high-resolution scanning electron microscopy, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy microanalysis was used to characterise the various etching steps of the process and the resulting HfO2/GaAs pattern morphology, structure, and chemical composition. We show that the patterning process can be applied to fabricate uniform arrays of HfO2 mesa stripes with tapered sidewalls and linewidths of 100 nm. The exposed GaAs trenches were found to be residue-free and atomically smooth with a root-mean-square line roughness of 0.18 nm after plasma etching. PACS: Dielectric oxides 77.84.Bw, Nanoscale pattern formation 81.16.Rf, Plasma etching 52.77.Bn, Fabrication of III-V semiconductors 81.05.Ea

  17. Large-signal characterizations of DDR IMPATT devices based on group III-V semiconductors at millimeter-wave and terahertz frequencies

    Science.gov (United States)

    Acharyya, Aritra; Mallik, Aliva; Banerjee, Debopriya; Ganguli, Suman; Das, Arindam; Dasgupta, Sudeepto; Banerjee, J. P.

    2014-08-01

    Large-signal (L-S) characterizations of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on group III-V semiconductors such as wurtzite (Wz) GaN, GaAs and InP have been carried out at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands. A L-S simulation technique based on a non-sinusoidal voltage excitation (NSVE) model developed by the authors has been used to obtain the high frequency properties of the above mentioned devices. The effect of band-to-band tunneling on the L-S properties of the device at different mm-wave and THz frequencies are also investigated. Similar studies are also carried out for DDR IMPATTs based on the most popular semiconductor material, i.e. Si, for the sake of comparison. A comparative study of the devices based on conventional semiconductor materials (i.e. GaAs, InP and Si) with those based on Wz-GaN shows significantly better performance capabilities of the latter at both mm-wave and THz frequencies.

  18. Monolithic integration of hybrid III-V/Si lasers and Si-based modulators for data transmission up to 25Gbps

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2017-02-01

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon Distributed Bragg Reflector (DBR) tunable lasers and silicon Mach-Zehnder modulator (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in details. Data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the lasers Bragg reflectors.

  19. Co-integrated 1.3µm hybrid III-V/silicon tunable laser and silicon Mach-Zehnder modulator operating at 25Gb/s.

    Science.gov (United States)

    Ferrotti, Thomas; Blampey, Benjamin; Jany, Christophe; Duprez, Hélène; Chantre, Alain; Boeuf, Frédéric; Seassal, Christian; Ben Bakir, Badhise

    2016-12-26

    In this paper, the 200mm silicon-on-insulator (SOI) platform is used to demonstrate the monolithic co-integration of hybrid III-V/silicon distributed Bragg reflector (DBR) tunable lasers and silicon Mach-Zehnder modulators (MZMs), to achieve fully integrated hybrid transmitters for silicon photonics. The design of each active component, as well as the fabrication process steps of the whole architecture are described in detail. A data transmission rate up to 25Gb/s has been reached for transmitters using MZMs with active lengths of 2mm and 4mm. Extinction ratios of respectively 2.9dB and 4.7dB are obtained by applying drive voltages of 2.5V peak-to-peak on the MZMs. 25Gb/s data transmission is demonstrated at 1303.5nm and 1315.8nm, with the possibility to tune the operating wavelength by up to 8.5nm in each case, by using metallic heaters above the laser Bragg reflectors.

  20. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

    2014-05-15

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  1. Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

    International Nuclear Information System (INIS)

    Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

    2014-01-01

    We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

  2. Ternary q-Virasoro-Witt Hom-Nambu-Lie algebras

    International Nuclear Information System (INIS)

    Ammar, F; Makhlouf, A; Silvestrov, S

    2010-01-01

    In this paper we construct ternary q-Virasoro-Witt algebras which q-deform the ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos using su(1, 1) enveloping algebra techniques. The ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos depend on a parameter and are not Nambu-Lie algebras for all but finitely many values of this parameter. For the parameter values for which the ternary Virasoro-Witt algebras are Nambu-Lie, the corresponding ternary q-Virasoro-Witt algebras constructed in this paper are also Hom-Nambu-Lie because they are obtained from the ternary Nambu-Lie algebras using the composition method. For other parameter values this composition method does not yield a Hom-Nambu-Lie algebra structure for q-Virasoro-Witt algebras. We show however, using a different construction, that the ternary Virasoro-Witt algebras of Curtright, Fairlie and Zachos, as well as the general ternary q-Virasoro-Witt algebras we construct, carry a structure of the ternary Hom-Nambu-Lie algebra for all values of the involved parameters.

  3. Description of light charged particle emission in ternary fission

    International Nuclear Information System (INIS)

    Andreev, A. V.; Adamian, G. G.; Antonenko, N. V.; Kuklin, S. N.; Scheid, W.

    2010-01-01

    We consider the motion of three fragments starting from the scission point of ternary system. In the alpha-accompanied ternary fission the initial conditions are not the free parameters and determined by minimization of potential energy at scission point. In the trajectory calculations the angular distribution and mean value of the kinetic energy of the alpha-particles are well described in the spontaneous ternary fission of 252 Cf. In the Be- and C-accompanied ternary fission we found that the emission of the third particle occurs from one of the heavy fragments after their separation. (authors)

  4. Ternary q-Virasoro-Witt Hom-Nambu-Lie algebras

    Energy Technology Data Exchange (ETDEWEB)

    Ammar, F [Faculte des Sciences, Universite de Sfax, BP 1171, 3000 Sfax (Tunisia); Makhlouf, A [Laboratoire de Mathematiques, Informatique et Applications, Universite de Haute Alsace, 4, rue des Freres Lumiere F-68093 Mulhouse (France); Silvestrov, S, E-mail: Faouzi.Ammar@rnn.fss.t, E-mail: Abdenacer.Makhlouf@uha.f, E-mail: sergei.silvestrov@math.lth.s [Centre for Mathematical Sciences, Lund University, Box 118, SE-221 00 Lund (Sweden)

    2010-07-02

    In this paper we construct ternary q-Virasoro-Witt algebras which q-deform the ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos using su(1, 1) enveloping algebra techniques. The ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos depend on a parameter and are not Nambu-Lie algebras for all but finitely many values of this parameter. For the parameter values for which the ternary Virasoro-Witt algebras are Nambu-Lie, the corresponding ternary q-Virasoro-Witt algebras constructed in this paper are also Hom-Nambu-Lie because they are obtained from the ternary Nambu-Lie algebras using the composition method. For other parameter values this composition method does not yield a Hom-Nambu-Lie algebra structure for q-Virasoro-Witt algebras. We show however, using a different construction, that the ternary Virasoro-Witt algebras of Curtright, Fairlie and Zachos, as well as the general ternary q-Virasoro-Witt algebras we construct, carry a structure of the ternary Hom-Nambu-Lie algebra for all values of the involved parameters.

  5. Virtual crystal description of III–V semiconductor alloys in the tight binding approach

    International Nuclear Information System (INIS)

    Nestoklon, M O; Benchamekh, R; Voisin, P

    2016-01-01

    We propose a simple and effective approach to construct the empirical tight-binding parameters of ternary alloys in the virtual crystal approximation. This combines a new, compact formulation of the strain parameters and a linear interpolation of the Hamiltonians of binary materials strained to the alloy equilibrium lattice parameter . We show that it is possible to obtain a perfect description of the bandgap bowing of ternary alloys in the InGaAsSb family of materials. Furthermore, this approach is in a good agreement with supercell calculations using the same set of parameters. This scheme opens a way for atomistic modeling of alloy-based quantum wells and quantum wires without extensive supercell calculations. (paper)

  6. “Direct modulation of a hybrid III-V/Si DFB laser with MRR filtering for 22.5-Gb/s error-free dispersion-uncompensated transmission over 2.5-km SSMF

    DEFF Research Database (Denmark)

    Cristofori, Valentina; Da Ros, Francesco; Ding, Yunhong

    2016-01-01

    Error-free and penalty-free transmission over 2.5 km SSMF of a 22.5 Gb/s data signal from a directly modulated hybrid III-V/Si DFB laser is achieved by enhancing the dispersion tolerance using a silicon micro-ring resonator....

  7. Enthalpy of mixing of liquid Ag–Bi–Cu alloys at 1073 K

    International Nuclear Information System (INIS)

    Fima, Przemysław; Flandorfer, Hans

    2014-01-01

    Highlights: • Partial and integral mixing enthalpies of liquid Ag–Bi–Cu alloys were determined. • Integral mixing enthalpies are small and endothermic, similar to limiting binaries. • The ternary data were fitted on the basis of Redlich–Kister–Muggianu model. - Abstract: The Ag–Bi–Cu system is among those ternary systems which have not been fully studied yet, in particular the thermodynamic description of the liquid phase is missing. Partial and integral enthalpies of mixing of liquid ternary Ag–Bi–Cu alloys were determined over a broad composition range along six sections: x(Ag)/x(Bi) = 0.25, 1, 4; x(Ag)/x(Cu) = 1.5; x(Bi)/x(Cu) = 1.86, 4. Measurements were carried out at 1073 K using two Calvet type microcalorimeters and drop calorimetric technique. It was found that integral enthalpies of mixing are small and endothermic, similarly to limiting binary alloys. The ternary data were fitted on the basis of an extended Redlich–Kister–Muggianu model for substitutional solutions. There are no significant additional ternary interactions

  8. Eutectic structures in friction spot welding joint of aluminum alloy to copper

    Science.gov (United States)

    Shen, Junjun; Suhuddin, Uceu F. H.; Cardillo, Maria E. B.; dos Santos, Jorge F.

    2014-05-01

    A dissimilar joint of AA5083 Al alloy and copper was produced by friction spot welding. The Al-MgCuAl2 eutectic in both coupled and divorced manners were found in the weld. At a relatively high temperature, mass transport of Cu due to plastic deformation, material flow, and atomic diffusion, combined with the alloy system of AA5083 are responsible for the ternary eutectic melting.

  9. Band alignment and optical absorption in Ga(Sb)N alloys.

    Science.gov (United States)

    Andriotis, Antonis N; Sheetz, R Michael; Richter, Ernst; Menon, Madhu

    2014-02-05

    We extend the theory of band alignment proposed by Harrison to ternary and quaternary heteropolar semiconductors. Combining this with first-principles density functional theory incorporating the LDA/GGA+U formalism (LDA: local density approximation; GGA: generalized gradient approximation) can result in useful electronic structure predictions for new alloys. The practicality of this is demonstrated by application to the Ga(Sbx)N1-x alloys, where the feasibility of water splitting reaction under visible light irradiation is discussed.

  10. Eutectic structures in friction spot welding joint of aluminum alloy to copper

    International Nuclear Information System (INIS)

    Shen, Junjun; Suhuddin, Uceu F. H.; Cardillo, Maria E. B.; Santos, Jorge F. dos

    2014-01-01

    A dissimilar joint of AA5083 Al alloy and copper was produced by friction spot welding. The Al-MgCuAl 2 eutectic in both coupled and divorced manners were found in the weld. At a relatively high temperature, mass transport of Cu due to plastic deformation, material flow, and atomic diffusion, combined with the alloy system of AA5083 are responsible for the ternary eutectic melting

  11. Role of alloying additions on the properties of Cu–Al–Mn shape memory alloys

    International Nuclear Information System (INIS)

    Dasgupta, Rupa; Jain, Ashish Kumar; Kumar, Pravir; Hussain, Shahadat; Pandey, Abhishek

    2015-01-01

    are significantly high than conventionally reported except with the addition of Mg in which case no distinct peaks have been recorded. The range of martensite retention is the maximum in ternary Cu–Al–Mn alloys; addition of quaternary elements decreases this range significantly. Presence of Ni delays austenite formation and completion [As and Af] significantly as compared to the ternary alloys; whereas with other additions the As and Af temperatures are brought forward. This means that whereas the alloys without quaternary additions would be better suited for its shape memory properties, ternary alloys would be better suited for higher transition temperatures. The role of different alloying additions has been highlighted in the findings. Variations in properties have been attained due to different additions and improvements attained in terms of higher transformation temperatures and martensite formation due to the alloying additions

  12. Role of alloying additions on the properties of Cu–Al–Mn shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Rupa, E-mail: rupadasgupta@ampri.res.in; Jain, Ashish Kumar; Kumar, Pravir; Hussain, Shahadat; Pandey, Abhishek

    2015-01-25

    are significantly high than conventionally reported except with the addition of Mg in which case no distinct peaks have been recorded. The range of martensite retention is the maximum in ternary Cu–Al–Mn alloys; addition of quaternary elements decreases this range significantly. Presence of Ni delays austenite formation and completion [As and Af] significantly as compared to the ternary alloys; whereas with other additions the As and Af temperatures are brought forward. This means that whereas the alloys without quaternary additions would be better suited for its shape memory properties, ternary alloys would be better suited for higher transition temperatures. The role of different alloying additions has been highlighted in the findings. Variations in properties have been attained due to different additions and improvements attained in terms of higher transformation temperatures and martensite formation due to the alloying additions.

  13. High performance wood composites based on benzoxazine-epoxy alloys.

    Science.gov (United States)

    Jubsilp, Chanchira; Takeichi, Tsutomu; Hiziroglu, Salim; Rimdusit, Sarawut

    2008-12-01

    Wood-substituted composites from matrices based on ternary mixtures of benzoxazine, epoxy, and phenolic novolac resins (BEP resins) using woodflour (Hevea brasiliensis) as filler are developed. The results reveal that the addition of epoxy resin into benzoxazine resin can lower the liquefying temperature of the ternary systems whereas rheological characterization of the gel points indicates an evident delay of the vitrification time as epoxy content increased. The gelation of the ternary mixtures shows an Arrhenius-typed behavior and the gel time can be well predicted by an Arrhenius equation with activation energy of 35-40kJ/mol. For wood-substituted composites from highly filled BEP alloys i.e. at 70% by weight of woodflour, the reinforcing effect of the woodflour shows a substantial enhancement in the composite stiffness i.e. 8.3GPa of the filled BEP811 vs 5.9GPa of the unfilled BEP811. The relatively high flexural strength of the BEP wood composites up to 70MPa can also be obtained. The outstanding compatibility between the woodflour and the ternary matrices attributed to the modulus and thermal stability enhancement of the wood composites particularly with an increase of the polybenzoxazine fraction in the BEP alloys.

  14. Thermodynamic database of multi-component Mg alloys and its application to solidification and heat treatment

    Directory of Open Access Journals (Sweden)

    Guanglong Xu

    2016-12-01

    Full Text Available An overview about one thermodynamic database of multi-component Mg alloys is given in this work. This thermodynamic database includes thermodynamic descriptions for 145 binary systems and 48 ternary systems in 23-component (Mg–Ag–Al–Ca–Ce–Cu–Fe–Gd–K–La–Li–Mn–Na–Nd–Ni–Pr–Si–Sn–Sr–Th–Y–Zn–Zr system. First, the major computational and experimental tools to establish the thermodynamic database of Mg alloys are briefly described. Subsequently, among the investigated binary and ternary systems, representative binary and ternary systems are shown to demonstrate the major feature of the database. Finally, application of the thermodynamic database to solidification simulation and selection of heat treatment schedule is described.

  15. Composition pathway in Fe–Cu–Ni alloy during coarsening

    International Nuclear Information System (INIS)

    Mukherjee, Rajdip; Nestler, Britta; Choudhury, Abhik

    2013-01-01

    In this work the microstructure evolution for a two phase Fe–Cu–Ni ternary alloy is studied in order to understand the kinetic composition paths during coarsening of precipitates. We have employed a quantitative phase-field model utilizing the CALPHAD database to simulate the temporal evolution of a multi-particle system in a two-dimensional domain. The paths for the far-field matrix and for precipitate average compositions obtained from simulation are found to be rectilinear. The trends are compared with the corresponding sharp interface theory, in the context of an additional degree of freedom for determining the interface compositions due to the Gibbs–Thomson effect in a ternary alloy. (paper)

  16. Composition pathway in Fe-Cu-Ni alloy during coarsening

    Science.gov (United States)

    Mukherjee, Rajdip; Choudhury, Abhik; Nestler, Britta

    2013-10-01

    In this work the microstructure evolution for a two phase Fe-Cu-Ni ternary alloy is studied in order to understand the kinetic composition paths during coarsening of precipitates. We have employed a quantitative phase-field model utilizing the CALPHAD database to simulate the temporal evolution of a multi-particle system in a two-dimensional domain. The paths for the far-field matrix and for precipitate average compositions obtained from simulation are found to be rectilinear. The trends are compared with the corresponding sharp interface theory, in the context of an additional degree of freedom for determining the interface compositions due to the Gibbs-Thomson effect in a ternary alloy.

  17. Solubility of uranium in liquid gallium, indium and their alloys

    International Nuclear Information System (INIS)

    Volkovich, Vladimir A.; Maltsev, Dmitry S.; Yamschikov, Leonid F.; Osipenko, Alexander G.; Kormilitsyn, Mikhail V.

    2014-01-01

    Pyrochemical reprocessing of spent nuclear fuels (SNF) employing molten salts and liquid metals as working media is considered as a possible alternative to the existing liquid extraction (PUREX) processes. Liquid salts and metals allow reprocessing highly irradiated high burn-up fuels with short cooling times, including the fuels of fast neutron reactors. Pyrochemical technology opens a way to practical realization of short closed fuel cycle. Liquid low-melting metals are immiscible with molten salts and can be effectively used for separation (or selective extraction) of SNF components dissolved in fused salts. Binary or ternary alloys of eutectic compositions can be employed to lower the melting point of the metallic phase. However, the information on SNF components behaviour and properties in ternary liquid metal alloys is very scarce

  18. Electron-beam-induced reactivation of Si dopants in hydrogenated two-dimensional AlGaAs heterostructures: a possible new route for III-V nanostructure fabrication

    International Nuclear Information System (INIS)

    Kurowski, Ludovic; Bernard, Dorothee; Constant, Eugene; Decoster, Didier

    2004-01-01

    Hydrogen incorporation in n-type Si-doped GaAs epilayers is a well-known process which leads to the neutralization of the active Si impurities with the formation of SiH complexes. Recently, we have shown that SiH complex dissociation and, consequently, Si-dopant reactivation could occur when the epilayers are exposed to an electron beam. Two epilayers have been studied: the first is a 0.35 μm thick hydrogenated Si-doped GaAs epilayer and the second is Si planar-doped AlGaAs/GaAs/InGaAs heterostructures. Firstly, Hall effect measurements have been carried out on the epilayers exposed, after RF hydrogen plasma exposition, to increasing electron doses with different injection energies. For the 2D heterostructures, we have observed that the free carrier density N s does not vary significantly for weak electron densities. This reactivation presents a threshold value, contrary to the 0.35 μm epilayer in which N s varies quite linearly. It will be shown that such phenomena might be attributed to the filling of surface states as the dopants are progressively reactivated. Then, using a high spatial resolution electron beam lithography system, nanometric conductive patterns have been fabricated starting from hydrogenated epilayers. Electric measurements have been performed and the results obtained show that about 15 nm spatial resolution could be expected. In conclusion, taking into account this spatial resolution, the high spatial contrast of conductivity which could be expected due to the existence of an electron dose threshold, and the high mobility of the AlGaAs/GaAs/InGaAs heterostructure, the effects described in this paper could open a new way for the fabrication of III-V 1D or 2D mesoscopic structures for electronic or optoelectronic applications

  19. Use of steel and tantalum apparatus for molten Cd-Mg-Zn alloys

    Science.gov (United States)

    Bennett, G. A.; Burris, L., Jr.; Kyle, M. L.; Nelson, P. A.

    1966-01-01

    Steel and tantalum apparatus contains various ternary alloys of cadmium, zinc, and magnesium used in pyrochemical processes for the recovery of uranium-base reactor fuels. These materials exhibit good corrosion resistance at the high temperatures necessary for fuel separation in liquid metal-molten salt solvents.

  20. Low alloy additions of iron, silicon, and aluminum to uranium: a literature survey

    International Nuclear Information System (INIS)

    Ludwig, R.L.

    1980-01-01

    A survey of the literature has been made on the experimental results of small additions of iron, silicon, and aluminum to uranium. Information is also included on the constitution, mechanical properties, heat treatment, and deformation of various binary and ternary alloys. 42 references, 24 figures, 13 tables

  1. Rapid theory-guided prototyping of ductile Mg alloys: from binary to multi-component materials

    Czech Academy of Sciences Publication Activity Database

    Pei, Z.; Friák, Martin; Sandlöbes, S.; Nazarov, R.; Svendsen, B.; Raabe, D.; Neugebauer, J.

    2015-01-01

    Roč. 17, č. 9 (2015), Art. n. 093009 ISSN 1367-2630 Institutional support: RVO:68081723 Keywords : magnesium * alloys * ductile * ternary * rare-earth * ab initio Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015

  2. Neutron Damage and MAX Phase Ternary Compounds

    International Nuclear Information System (INIS)

    Barsoum, Michael; Hoffman, Elizabeth; Sindelar, Robert; Garcua-Diaz, Brenda; Kohse, Gordon

    2014-01-01

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  3. Dumbbells and onions in ternary nucleation.

    Science.gov (United States)

    Nellas, Ricky B; Chen, Bin; Siepmann, J Ilja

    2007-06-14

    Molecular simulations for a ternary nucleation system (water/n-nonane/1-butanol) demonstrate a more complex nucleation mechanism than previously thought, where critical nuclei with different compositions are present even for a given vapour-phase composition; the spatial distribution in these critical nuclei is heterogeneous and dumbbell and onion motifs are found; in the former, water and nonane nano-droplets are connected through a butanol handle, while in the latter a water core is surrounded by a nonane corona with an interfacial butanol shell.

  4. Neutron Damage and MAX Phase Ternary Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Barsoum, Michael [Drexel Univ., Philadelphia, PA (United States); Hoffman, Elizabeth [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Sindelar, Robert [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Garcua-Duaz, Brenda [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Kohse, Gordon [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2014-06-17

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  5. Viscometric and thermodynamic studies of interactions in ternary ...

    Indian Academy of Sciences (India)

    Viscometric and thermodynamic studies of interactions in ternary solutions containing sucrose and aqueous alkali metal halides at 293.15, 303.15 and 313.15 K. Reena Gupta Mukhtar Singh ... Keywords. Ternary solutions; interactions of ionic and nonionic solutes; partial molar volumes; sucrosealkali metal halide solutions.

  6. A high-speed interconnect network using ternary logic

    DEFF Research Database (Denmark)

    Madsen, Jens Kargaard; Long, S. I.

    1995-01-01

    This paper describes the design and implementation of a high-speed interconnect network (ICN) for a multiprocessor system using ternary logic. By using ternary logic and a fast point-to-point communication technique called STARI (Self-Timed At Receiver's Input), the communication between...

  7. Density-Driven segregation in Binary and Ternary Granular Systems

    NARCIS (Netherlands)

    Windows-Yule, Kit; Parker, David

    2015-01-01

    We present a first experimental study of density-induced segregation within a three-dimensional, vibrofluidised, ternary granular system. Using Positron Emission Particle Tracking (PEPT), we study the steady-state particle distributions achieved by binary and ternary granular beds under a variety of

  8. Nonswelling alloy

    International Nuclear Information System (INIS)

    Harkness, S.D.

    1975-01-01

    An aluminum alloy containing one weight percent copper has been found to be resistant to void formation and thus is useful in all nuclear applications which currently use aluminum or other aluminum alloys in reactor positions which are subjected to high neutron doses

  9. Solidification processing of intermetallic Nb-Al alloys

    Science.gov (United States)

    Smith, Preston P.; Oliver, Ben F.; Noebe, Ronald D.

    1992-01-01

    Several Nb-Al alloys, including single-phase NbAl3 and the eutectic of Nb2Al and NbAl3, were prepared either by nonconsumable arc melting in Ar or by zone processing in He following initial induction melting and rod casting, and the effect of the solidification route on the microstructure and room-temperature mechanical properties of these alloys was investigated. Automated control procedures and melt conditions for directional solidification of NbAl3 and the Nb2Al/Nb3Al eutectic were developed; high purity and stoichiometry were obtained. The effects of ternary additions of Ti and Ni are described.

  10. Study of Cu-Al-Zn alloys hardness temperature dependence

    International Nuclear Information System (INIS)

    Kurmanova, D.T.; Skakov, M.K.; Melikhov, V.D.

    2001-01-01

    In the paper the results of studies for the Cu-Al-Zn ternary alloys hardness temperature dependence are presented. The method of 'hot hardness' has been used during study of the solid state phase transformations and under determination of the hot stability boundaries. Due to the samples brittleness a hardness temperature dependence definition is possible only from 350-400 deg. C. Sensitivity of the 'hot hardness' method is decreasing within high plasticity range, so the measurements have been carried out only up to 700-800 deg. C. It is shown, that the alloys hardness dependence character from temperature is close to exponential one within the certain structure modification existence domain

  11. Lead activity in Pb-Sb-Bi alloys

    Directory of Open Access Journals (Sweden)

    A. S. Kholkina

    2014-11-01

    Full Text Available The present work is devoted to the study of lead thermodynamic activity in the Pb-Sb-Bi alloys. The method for EMF measurements of the concentration cell: (–Pb|KCl-PbCl2¦¦KCl-PbCl2|Pb-(Sb-Bi(+ was used. The obtained concentration dependences of the galvanic cell EMF are described by linear equations. The lead activity in the ternary liquid-metal alloy demonstrates insignificant negative deviations from the behavior of ideal solutions.

  12. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  13. Nanoscratching of nylon 66-based ternary nanocomposites

    International Nuclear Information System (INIS)

    Dasari, Aravind; Yu Zhongzhen; Mai Yiuwing

    2007-01-01

    The nanoscratch behavior of nylon 66/SEBS-g-MA/clay ternary nanocomposites produced by different blending protocols with contrasting microstructures is studied by using atomic force and transmission electron microscopy. A standard diamond Berkovich indenter is used for scratching and a low load of 1 mN, along with a low sliding velocity of 1 μm s -1 , are employed for this purpose. It is shown that in order to resist penetration it is more important to have exfoliated clay in the continuous nylon matrix during nanoscratching than to have the clay in the dispersed soft rubber domains. The results obtained also explain the preferred usage of ternary nanocomposites compared to binary nanocomposites, particularly nylon 66/exfoliated clay nanocomposites. This research extends current basic knowledge and provides new insights on the nature of nanoscale processes that occur during nanoscratching of polymer nanocomposites. Critical questions are raised on the relationships between the penetration depth and material deformation and damage left behind the moving indenter

  14. Irregular Homogeneity Domains in Ternary Intermetallic Systems

    Directory of Open Access Journals (Sweden)

    Jean-Marc Joubert

    2015-12-01

    Full Text Available Ternary intermetallic A–B–C systems sometimes have unexpected behaviors. The present paper examines situations in which there is a tendency to simultaneously form the compounds ABx, ACx and BCx with the same crystal structure. This causes irregular shapes of the phase homogeneity domains and, from a structural point of view, a complete reversal of site occupancies for the B atom when crossing the homogeneity domain. This work reviews previous studies done in the systems Fe–Nb–Zr, Hf–Mo–Re, Hf–Re–W, Mo–Re–Zr, Re–W–Zr, Cr–Mn–Si, Cr–Mo–Re, and Mo–Ni–Re, and involving the topologically close-packed Laves, χ and σ phases. These systems have been studied using ternary isothermal section determination, DFT calculations, site occupancy measurement using joint X-ray, and neutron diffraction Rietveld refinement. Conclusions are drawn concerning this phenomenon. The paper also reports new experimental or calculated data on Co–Cr–Re and Fe–Nb–Zr systems.

  15. Distillation of cadmium from uranium plutonium cadmium alloy

    Science.gov (United States)

    Kato, Tetsuya; Iizuka, Masatoshi; Inoue, Tadashi; Iwai, Takashi; Arai, Yasuo

    2005-04-01

    Uranium-plutonium alloy was prepared by distillation of cadmium from U-Pu-Cd ternary alloy. The initial ternary alloy contained 2.9 wt% U and 8.7 wt% Pu other than Cd, which were recovered by molten salt electrolysis with liquid Cd cathode. The distillation experiments were conducted in 10 g scale of the initial alloy using a small-scale distillation furnace equipped with an evaporator and a condenser in a vacuum vessel. After distillation at 1073 K, the weight of the residue was in good agreement with that of the loaded actinides, where the content of Cd decreased to less than 0.05 wt%. The uranium-plutonium alloy product was recovered without adhering to the yttria crucible. The cross section of the product was observed using electron probe micro-analyzer and it was found to consist of a dense material. Almost all of the evaporated Cd was recovered in the condenser and so enclosed well in the apparatus.

  16. Investigation of sulphides in iron alloys of high purity

    International Nuclear Information System (INIS)

    Wyjadlowski, T.

    1973-01-01

    This research thesis reports the study of the morphology and composition of sulphides in iron alloys with respect to metal composition and to the nature of impurities. In order to understand the specific action of each addition on inclusion morphology, this work has started with high-purity alloys (binary alloys and then ternary alloys). The author studied whether solubility variations would entail either intergranular or intragranular or hybrid iron sulphide precipitation. He examined whether sulphide morphology is depending on thermal treatment, and whether equilibrium precipitates were different in terms of morphology and composition at high and room temperature. He studied the influence of addition elements on sulphide morphology and composition, an important issue as some elements may reduce brittleness. These elements are classified in terms of affinity with sulphur

  17. Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III-V, and II-VI materials

    Energy Technology Data Exchange (ETDEWEB)

    Paessler, R. [Technische Universitaet Chemnitz, Institut fuer Physik, 09107 Chemnitz (Germany)

    2010-01-15

    We perform analyses of cryogenic heat capacity data sets, that are available from thermo-physical literature for group-IV materials (diamond, Si, Ge, and 3C-SiC), a variety of III-V materials (BN, BP, BAs, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and several II-VI materials (ZnO, ZnS, ZnSe, CdS, and CdTe). A prominent new result of the present study consists above all in a general high-precision formula, {theta}{sub D}(T)= {theta}{sub D}(0)(1+a{sub 2}T{sup 2}+a{sub 4}T{sup 4}){sup -1/3}, for the limiting behavior of the Debye temperature in the liquid helium-hydrogen region. The actual magnitudes of limiting Debye temperatures, {theta}{sub D}(0), in combination with the associated (throughout positive) curve shape coefficients, a{sub 2} and a{sub 4}, are given in unambiguous way in terms of the three lowest-order heat capacity coefficients involved by conventional Taylor series expansions for lattice heat capacities within the cryogenic range up to temperatures of order {theta}{sub D}(0){theta}{sub D}(0)/30. Among the variety of presently specified calorimetric {theta}{sub D}(0) values, particularly those obtained for a series of wide-bandgap materials may be of considerable interest. These are about 1110 K for 3C-SiC, 1860 for c-BN, 950 K for BP, 592 K for GaN, 429 or 392 K for isotopically modified samples {sup 64}Zn {sup 16}O and {sup 68}Zn {sup 18}O, respectively, 414 K for natural ZnO, 349 K for ZnS, 276 K for ZnSe, and 236 K for CdS. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems.

    Science.gov (United States)

    Niu, Gang; Zoellner, Marvin Hartwig; Schroeder, Thomas; Schaefer, Andreas; Jhang, Jin-Hao; Zielasek, Volkmar; Bäumer, Marcus; Wilkens, Henrik; Wollschläger, Joachim; Olbrich, Reinhard; Lammers, Christian; Reichling, Michael

    2015-10-14

    Rare earth praseodymium and cerium oxides have attracted intense research interest in the last few decades, due to their intriguing chemical and physical characteristics. An understanding of the correlation between structure and properties, in particular the surface chemistry, is urgently required for their application in microelectronics, catalysis, optics and other fields. Such an understanding is, however, hampered by the complexity of rare earth oxide materials and experimental methods for their characterisation. Here, we report recent progress in studying high-quality, single crystalline, praseodymium and cerium oxide films as well as ternary alloys grown on Si(111) substrates. Using these well-defined systems and based on a systematic multi-technique surface science approach, the corresponding physical and chemical properties, such as the surface structure, the surface morphology, the bulk-surface interaction and the oxygen storage/release capability, are explored in detail. We show that specifically the crystalline structure and the oxygen stoichiometry of the oxide thin films can be well controlled by the film preparation method. This work leads to a comprehensive understanding of the properties of rare earth oxides and highlights the applications of these versatile materials. Furthermore, methanol adsorption studies are performed on binary and ternary rare earth oxide thin films, demonstrating the feasibility of employing such systems for model catalytic studies. Specifically for ceria systems, we find considerable stability against normal environmental conditions so that they can be considered as a "materials bridge" between surface science models and real catalysts.

  19. Mixing effects in a ternary Hf-Zr-Ni metallic melt

    Science.gov (United States)

    Nowak, B.; Holland-Moritz, D.; Yang, F.; Evenson, Z.; Meyer, A.

    2018-03-01

    We study the effect of the substitution of Zr by Hf on the dynamical behavior in the Zr36Ni64 melt. A reduced measured self-diffusion coefficient and a higher measured melt viscosity for an increased amount of Hf were observed. The ternary Hf10Zr25Ni65 melt, which exhibits a pronounced deviation from Arrhenius behavior over a studied temperature range of 550 K, can be accurately described by the scaling law of mode-coupling theory (MCT) with almost equal parameters for the self-diffusion and the viscosity. Although we only substitute alloy components with a nearly equal atomic size and the measured overall packing fraction remains almost unchanged, the dynamics in Hf10Zr25Ni65 are slower compared to Zr36Ni64 . This corresponds also to a higher critical temperature Tc and might be induced by different chemical interactions in the melts. The increased Tc results in a significantly smaller difference between liquidus and critical temperature Δ TLC=TL-Tc for the ternary melt in comparison with Zr36Ni64 , which may favor the glass formation in the Hf10Zr25Ni65 melt.

  20. Ostwald ripening of decomposed phases in Cu-Ni-Cr alloys

    International Nuclear Information System (INIS)

    Hernandez-Santiago, Felipe; Lopez-Hirata, Victor; Dorantes-Rosales, Hector J.; Saucedo-Munoz, Maribel L.; Gonzalez-Velazquez, Jorge L.; Paniagua-Mercado, Ana Ma.

    2008-01-01

    A study of the coarsening process of the decomposed phases was carried out in the Cu-34 wt.% Ni-4 wt.% Cr and Cu-45 wt.% Ni-10 wt.% Cr alloys using transmission electron microscopy. As aging progressed, the morphology of the coherent decomposed Ni-rich phase changed from cuboids to platelets aligned in the Cu-rich matrix directions. Prolonged aging caused the loss of coherency between the decomposed phases and the morphology of the Ni-rich phase changed to ellipsoidal. The variation of mean radius of the coherent decomposed phases with aging time followed the modified LSW theory for thermally activated growth in ternary alloy systems. The linear variation of the density number of precipitates and matrix supersaturation with aging time, also confirmed that the coarsening process followed the modified LSW theory in both alloys. The coarsening rate was faster in the symmetrical Cu-45 wt.% Ni-10 wt.% Cr alloy due to its higher volume fraction of precipitates. The activation energy for thermally activated growth was determined to be about 182 and 102 kJ mol -1 in the Cu-34 wt.% Ni-4 wt.% Cr and Cu-45 wt.% Ni-10 wt.% Cr alloys, respectively. The lower energy for the former alloy seems to be related to an increase in the atomic diffusion process as the chromium content increases. The size distributions of precipitates in the Cu-Ni-Cr alloys were broader and more symmetric than that predicted by the modified LSW theory for ternary alloys