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  1. QUANDO LA LINGUA SI FA PENSIERO

    Daniela Finocchi

    2018-03-01

    Full Text Available Il Concorso letterario nazionale Lingua Madre, ideato nel 2005 da Daniela Finocchi, è un progetto permanente di Regione Piemonte e del Salone Internazionale del Libro di Torino diretto alle donne straniere (o di origine straniera con una sezione per le donne italiane. Nasce per creare relazione, scambio, confronto, per favorire la conoscenza reciproca e mettere in dialogo culture, identità, esperienze diverse. Tutto questo attraverso la scrittura in lingua italiana e tramite la fotografia. Una grande rete a disposizione delle donne, chiamate a raccontare e a raccontarsi in piena libertà e autonomia, a esprimersi al di fuori degli stereotipi, delle “norme” e delle “pre-iscrizioni” culturali e sociali, a giocare parti di sé tramite la parola. 
La lingua dà corpo a immaginari, desideri, mondi interiori e così si fa pensiero e diviene strumento indispensabile per conquistare il diritto a esistere e ad avere voce.   When language becomes thought The “Lingua Madre” national literary competition, founded in 2005 by Daniela Finocchi, is a permanent project of the Piedmont Region and the Turin International Book Fair aimed at foreign (born women, with a section for Italian women. It is aimed at developing relationships, exchanges, dialogues, promoting mutual knowledge and creating dialogue between different cultures, identities and experiences through writing in Italian and photography. A large network is available to women, so they can talk in full freedom and autonomy, express themselves outside stereotypes, “norms”, cultural and social prejudices and explore themselves through words. Language gives substance to ideas, desires, inner worlds, becoming thought, and is thus an indispensable tool to exist and have a voice.

  2. Dentro il casinò: quando il gioco si fa “malato” / Dans le casino : quand le jeu devient pathologie / Inside the casino: when the game becomes “pathological”

    Molin Valentina

    2011-07-01

    Full Text Available The purpose of this contribution is to highlight similarities between the pure clinical conception of excessive gamblingand the “practical” side of it – though free from any specific theoretical knowledge – as witnessed by employees in thegambling field, specifically employees of one Italian casino. The aim of the analysis is to highlight how workers in thegambling field can be considered as bearers of a particular knowledge in the clinical diagnosis of PG (PathologicalGambling “experts of the industry” in the same way as doctors, psychologists and psychiatrists. The analysis also aimsat revealing how this “experience” in identifying patients with problems related to excessive or unbalanced gambling isnot, in any way, used for identifying and possibly expelling these subjects from the Gambling House because it wouldbe in contrast with the economic interests of the company and of individual workers.Con questo contributo si intende porre in luce l'affinità fra la concezione tipicamente clinica del gioco d'azzardoeccessivo e quella “pratica” – seppur scevra da ogni conoscenza teorica specifica – di alcuni lavoratori di gioco,specificamente alcuni impiegati di un Casinò italiano. L'obiettivo dell'analisi è dunque quello di porre in luce comealcuni lavoratori che operano nell'ambiente del gioco d'azzardo possano essere considerati portatori di una particolareconoscenza nell'ambito della diagnostica clinica del PG (Pathological Gambling, “esperti del settore” alla stregua dimedici, psicologi e psichiatri. L'analisi condotta mira inoltre a rilevare come tale “esperienza” nell'individuazione disoggetti con problematiche connesse ad una pratica di gioco eccessiva o non equilibrata non venga utilizzata, poichél'individuazione e l'eventuale allontanamento dalla Casa da Gioco di tali soggetti si pone in contrasto con gli interessieconomici dell'azienda e dei singoli lavoratori.Le but de cet article est de mettre en lumi

  3. Aspectos patológicos e microbiológicos das doenças respiratórias em suínos de terminação no Brasil

    Marcos A.Z. Morés

    2015-08-01

    Full Text Available Resumo: Para avaliação dos aspectos patológicos e microbiológicos de casos clínicos de doenças respiratórias em suínos de terminação foram analisados 75 suínos doentes oriundos de 36 lotes. Suínos que apresentavam sinais clínicos respiratórios evidentes foram necropsiados para avaliação macroscópica e colheita de amostras para análise histopatológica e microbiológica. Foram realizados testes de isolamento bacteriano para as principais bactérias do sistema respiratório dos suínos, PCR para Mycoplasma hyorhinis, imuno-histoquímica para Influenza A, Circovirus suíno tipo 2 e Mycoplasma hyopneumoniae. A sensibilidade antimicrobiana de 24 amostras de Pasteurella multocida tipo A foi avaliada por testes de concentração inibitória mínima para os principais antimicrobianos utilizados em suinocultura. Mycoplasma hyopneumoniae e Pasteurella multocida tipo A foram os agentes infecciosos mais prevalentes. Broncopneumonia supurativa e pleurite foram as principais lesões respiratórias encontradas. Pasteurella multocida tipo A, quando presente, aumentou a extensão das lesões pulmonares. Todas as amostras de Pasteurella multocida testadas foram sensíveis aos antimicrobianos Doxiciclina, Enrofloxacina e Tilmicosina. Em 58% das amostras foi identificado mais de um agente infeccioso, evidenciando a alta prevalência da associação de agentes nas doenças respiratórias de suínos em terminação.

  4. Quando há artificação?

    Roberta Shapiro

    2013-04-01

    Full Text Available Como as pessoas fazem ou criam coisas que passam a ser vistas como obras de arte? Em outras palavras, quando há artificação? A resposta a essa pergunta é, ao mesmo tempo, simbólica, material e contextual. Tem a ver com significados, objetos, interação e instituições. Não procuramos definir o que é arte ou como ela deve ser considerada, mas como e sob quais circunstâncias ela ocorre por meio de observação metódica e pesquisa em diversos campos. Acrobatas de circos, dançarinos de breakdance, estilistas, chefes de cozinha, grafiteiros, tipógrafos, fotógrafos e músicos de jazz são alguns dos exemplos que exploramos. Essa perspectiva pragmática e empírica permite que possamos apresentar uma tipologia das formas de artificação e examinar suas fontes, bem como as questões de des-artificação e os obstáculos à artificação.

  5. Resíduo desidratado de cervejaria para suínos em terminação

    D.M.N. Albuquerque

    2011-04-01

    Full Text Available Determinaram-se os coeficientes de digestibilidade e de metabolizabilidade da matéria seca (MS, da energia bruta (EB, da proteína bruta (PB e da fibra bruta (FB e as energias digestível e metabolizável do resíduo desidratado de cervejaria (RDC para suínos na fase de terminação, e avaliaram-se o desempenho e as características da carcaça desses animais, alimentados com dietas que continham porcentagens de inclusão do RDC - 0, 5, 10, 15 e 20% -, bem como estudaram-se os parâmetros fisiológicos. No ensaio de digestibilidade, foram utilizados 12 leitões, machos, com média de peso de 57,3±5,6kg. Seis deles receberam a ração referência, à base de milho e farelo de soja, e seis a ração teste. No ensaio de desempenho, foram utilizados 40 leitões, com média de peso de 60,8±1,98kg. Os coeficientes de digestibilidade aparente da MS, EB, PB e FB foram, respectivamente, de 53,9%, 73,9%, 53,3% e 62,5%, e os valores das energias digestível e metabolizável do RDC de 2.628 e 2.623kcal/kg, respectivamente. A inclusão de RDC até a proporção de 20% não influenciou os parâmetros de desempenho e fisiológicos, nem as características de carcaça de suínos em terminação.

  6. Quando o imaginário se diz educacional

    Araújo, Alberto Filipe

    2010-01-01

    O imaginário educacional é devedor da concepção romântica de educação que privilegia a formação da interioridade do sujeito (daquilo que Jung denomina de das Selbst : o si-mesmo) por meio de uma viagem iniciática sob a forma, por exemplo, do "romance de formação". Daí a necessidade de se estruturar, mediante uma hermenêutica adequada, aquilo que constitui a sustância do imaginário educacional (alegorias, metáforas, símbolos, ideologemas e mitos), ainda que este apareça de um modo geral degrad...

  7. Quando la linguistica incontra l’informatica: una riflessione terminologica

    Gabriella Pardelli

    2013-03-01

    Full Text Available ItLe ricerche linguistiche, a partire dal secondo dopoguerra, hanno avuto un ritmo di evoluzione e di espansione molto rapido, grazie anche ai metodi di analisi introdotti, come l’uso dei metodi statistici o quantitativi nello studio delle lingue e delle opere letterarie. Nacquero nuovi settori di applicazione, la linguistica incontrò altre scienze e l’interdisciplinarietà venne sempre più praticata fino a diventare necessaria. L’introduzione di sistemi di automazione nelle analisi linguistiche videro la nascita della Linguistica Computazionale (LC che mise in connessione lo studio della lingua con l’ausilio dell’elaboratore elettronico. Dalla fine degli anni ’40 all’inizio degli anni ’60 gli utilizzi del calcolo elettronico per l’elaborazione di dati linguistici si articolarono in due filoni principali: i gli spogli elettronici dei testi che diedero impulso alla lessicografia computazionale, avviata da Padre Roberto Busa nel 1951 con la compilazione delle concordanze di Tommaso d’Aquino; ii i tentativi di traduzione automatica (TA, in inglese machine translation (MT, avviati da Weaver nel 1949 con la pubblicazione del memorandum “Translation”. La traduzione automatica divenne da subito nucleo e centro di spinta della Linguistica Computazionale utilizzando il calcolatore per trasportare un testo da una lingua naturale all’altra. Il presente articolo sintetizza il rapido percorso della LC e la necessità di elaborare in fretta una terminologia adeguata alla neonata disciplina. Fornisce, inoltre, indicazioni per il recupero informativo di documentazione del settore. In appendice viene data una rappresentazione tabellare (Tabelle 1, 2 e 3 dei termini estratti dai titoli degli articoli delle Conferenze Internazionali di Linguistica Computazionalei, (1965-2010 da cui si evince la rilevanza dei temi argomentali propria di questo settore disciplinare. Il sistema usato, per l’elaborazione di tali dati, è disponibile

  8. Productive, economic and qualitative effects of different nutritional programs for growing and finishing pigsEfeitos produtivos, qualitativos e econômicos de diferentes programas nutricionais para suínos em crescimento e terminação

    Valéria Santos Moreira

    2012-02-01

    Full Text Available The objective of this work was evaluate the best nutritional program for growing pigs, between five comercial diets with different levels of protein (high, medium and low, chrome picolinate and ractopamine for finishing pigs. Performance, carcass, economy and meat quality were evaluated. Seventy pigs (Pen Ar Lan were used (35 barrows and 35 gilts with initial weight ± standard deviation of 25.22 ± 2.5 kg and were slaughtered with final weight plus standard deviation of 119.08 ± 6.0kg. Difference between high protein and low protein + chrrome was observed to feed convertion during growth phases, with high protein showing better results. Difference was observed during finishing phase II to daily gain, showing better results for ractopamine over low protein. Muscle and fat deposition over carcass showed better results for ractopamine against low protein only. Lower levels of drip loss was observed for low protein and ractopamine treatments against higher levels of protein treatments. Ractopamine also showed the best cost when compared with all treatments and was the best nutritional program studied.O objetivo neste trabalho foi avaliar o melhor programa nutricional para suínos em engorda, entre cinco formulações comerciais a partir do uso de diferentes níveis de proteína total (alta, média e baixa, picolinato de cromo (Cr e ractopamina (Rac no final da terminação. Os tratamentos foram avaliados para desempenho, características de carcaça, aspectos econômicos e qualidade de carne. Foram utilizados 70 suínos de linhagem comercial Pen Ar Lan (35 machos castrados e 35 fêmeas com peso médio inicial ± desvio padrão de 25,22 ± 2,5 kg e peso final de abate ± desvio padrão de 119,08 ± 6,0kg. Para as fases iniciais de crescimento, foi observada diferença para a conversão alimentar com a ração com alta proteína apresentando melhor conversão alimentar em relação à ração com picolinato de cromo. Para a fase de terminação II

  9. Efeito do peso do suíno em terminação ao início da restrição alimentar sobre o desempenho e a qualidade da carcaça

    Bertol Teresinha Marisa

    2001-01-01

    Full Text Available Foi desenvolvido um estudo para determinar em que peso vivo deve se iniciar a restrição alimentar (RA, visando à melhoria do desempenho e da qualidade da carcaça em suínos machos castrados e fêmeas em terminação, alimentados com ração farelada, no período de inverno. Foram comparados quatro tratamentos: T1 - alimentação à vontade (AV até o abate; T2 - AV até os 90 kg PV e após restrição alimentar (RA de 10%; T3 - AV até os 75 kg peso e após RA de 10%; T4 - AV até os 60 kg PV e após RA de 10%. O experimento iniciou-se com peso vivo inicial dos animais de 52,58 ± 2,34 kg PV e encerrou-se com o peso de 119,27 ± 1,99 kg PV, quando os animais foram abatidos. A restrição alimentar iniciada em qualquer idade reduziu o ganho de peso diário (GPD, mas não melhorou a conversão alimentar (CA nem as características de carcaça dos machos castrados. Nas fêmeas, o GPD só foi reduzido naquelas que iniciaram a RA aos 60 kg peso, não havendo melhora da CA e nem da qualidade da carcaça com a RA iniciada em qualquer idade. Portanto, suínos com alto potencial para deposição de carne magra e baixo consumo voluntário de alimento, alimentados com dietas fareladas e contendo níveis adequados de aminoácidos, não respondem à restrição de energia com início entre os 60 e 90 kg PV para melhorar o desempenho e a qualidade da carcaça.

  10. Programas nutricionais com diferentes níveis proteicos e aditivos para suínos em crescimento e terminação

    Eduardo Raele de Oliveira

    2012-01-01

    O objetivo neste trabalho foi avaliar o melhor programa nutricional para suínos em engorda, entre cinco formulações comerciais a partir do uso de diferentes níveis de proteína total (alta, média e baixa), picolinato de cromo (Cr) e ractopamina (Rac) no final da terminação. Os tratamentos foram avaliados para desempenho, características de carcaça, aspectos econômicos e qualidade de carne. Foram utilizados 70 suínos de linhagem comercial Pen Ar Lan (35 machos castrados e 35 fêmeas) com peso m...

  11. Recria e terminação de borregas mestiças em confinamento alimentadas com níveis crescentes de concentrado na dieta

    Caroline Bertholini Ribeiro

    2016-12-01

    Full Text Available Objetivou-se avaliar dietas com níveis crescentes de concentrado para borregas confinadas e estabelecer a proporção de concentrado ideal para maximizar a utilização dos nutrientes e o desempenho durante as fases de recria e terminação. Foram confinadas 24 borregas alimentadas com feno de capim-Tifton e níveis crescentes de concentrado na dieta (20, 40, 60 e 80% para avaliação individual do consumo de matéria seca (CMS, digestibilidade dos nutrientes das dietas, ganho médio diário (GMD e eficiência alimentar (EA. As borregas foram abatidas com 47 kg. Na fase de recria, o CMS não foi alterado (P>0,05 pela inclusão de concentrado nas dietas (1176 g/dia. Foi observado efeito quadrático dos níveis de concentrado (P0,05. O CDMS e o valor de NDT apresentaram comportamento quadrático (P0,05. Recomenda-se a inclusão de 71,50% de concentrado na dieta de borregas para maximizar o aproveitamento dos nutrientes e o desempenho na fase de recria e 72,3% de concentrado para fase de terminação.

  12. Quando la Generazione Erasmus incontra la Generazione Precaria. La mobilità transnazionale dei giovani italiani e spagnoli

    Luca Raffini

    2014-07-01

    Full Text Available Uno dei più importanti risultati del processo di integrazione europea è la costruzione di uno spazio transnazionale in cui i cittadini europei possono muoversi liberamente. La mobilità favorisce dinamiche di europeizzazione dal basso –o di europeizzazione orizzontale–, e lo sviluppo di pratiche cross-nazionali e amplia le risorse individuali e relazionali a disposizione dei giovani per progettare i propri percorsi professionali e di vita. La Generazione Erasmus definisce giovani socializzati a un humus culturale transnazionale e fortemente identificati con l’Europa. Nell’attuale contesto di crisi economica, a sperimentare la mobilità sono sempre più i giovani altamente qualificati dei paesi dell’Europa del sud, quale strategia individuale cui ricorrere per trovare risposta ai problemi connessi alla precarietà, alla disoccupazione, alla sotto-qualificazione degli impieghi. Il risultato è che la mobilità può assumere il volto di un obbligo, più che di una scelta e, più che dinamiche di europeizzazione orizzontale, può favorire una “fuga dei cervelli” dai paesi del sud ai paesi del centro e del nord Europa. L’articolo, focalizzandosi sui giovani italiani e spagnoli, si chiede cosa succede quando la Generazione Erasmus incontra la Generazione Precaria, analizzando cause ed effetti della mobilità, sul piano micro e macro sociale e sul piano politico. | One of the main achievement of the European integration process is the making of a transnational space where European citizens can freely circulate. Mobility promotes a kind of bottom-up, or horizontal europeanization, and the spread of cross-national practices. It also contributes to a widening in the individual and relational resources available to youth to carry out their professional and personal life projects. The so called Erasmus Generation, defines young peoples socialized to a transnational cultural humus and highly identified with Europe. Indeed, in the current

  13. TRANSCORRER DA GRAVIDEZ NA ADOLESCÊNCIA: ESTUDO LONGITUDINAL QUANDO OS FILHOS SÃO ADOLESCENTES

    Nancy Ramacciotti de Oliveira-Monteiro

    2014-12-01

    Full Text Available Pesquisas sobre gravidez na adolescência (GA apontam heterogeneidade de causas associadas e consequências ao desenvolvimento das mães e filhos. Este artigo apresenta a quarta etapa de um estudo longitudinal com oito díades (mães/primeiros filhos nascidos na adolescência, no momento que os filhos têm 14 anos. O objetivo do estudo foi atualizar dados de condições psicossociais das díades. Entrevistas, observações nas moradias, ASR, CBCL e YSR foram instrumentos aplicados nas residências. Os resultados indicaram: prejuízos às trajetórias escolares e profissionais das mães; relações com a família de origem e posições paternas semelhantes às da época da gravidez; referências mais frequentes de uso de substâncias pelos pais; problemas de relacionamento entre mães e filhas. Melhores condições de desenvolvimento foram apresentadas em díades cujas relações com a família de origem e com o pai da criança foram boas. Maiores dificuldades foram verificadas naquelas díades com problemas nessas relações. A figura paterna indicou ser elemento diferencial na condição mais positiva ou negativa do desenvolvimento das díades (mães e filhos. Fica sugerida a continuidade da investigação longitudinal para quando os filhos forem adultos para permitir a verificação de possíveis impactos decorrentes da GA na trajetória de desenvolvimento em longo prazo.

  14. Sistemas de terminação em confinamento: perspectivas para dinamização da cadeia produtiva da carne bovina em Minas Gerais

    Moisés de Andrade Resende Filho

    2001-03-01

    Full Text Available A terminação de bovinos em confinamento vem-se apresentando como meio de expandir a oferta de carne bovina na entressafra, incrementando a produtividade do rebanho no estado de Minas Gerais. Este artigo se propõe a avaliar a viabilidade financeira de se intensificar a utilização da infra-estrutura disponivel para confinar, considerando a atual forma de comercialização. São contrastados três projetos de confinamento mutuamente exclusivos, considerando uma mesma instalação, épocas distintas de venda e o nivel de utilização da capacidade instalada. Utiliza-se a análise de fluxo de caixa associada à técnica de simulação de Monte Carlo, visando quantificar a rentabilidade e o risco associados a cada um dos projetos. Apesar da viabilidade financeira observada para a alternativa de intensificação do uso da capacidade instalada para confinar, não se verifica dominância estocástica desta em relação à estratégia de uso menos intensiva.The finishing of cattle in feedlots has been presented as a way to increase the beef meat supply in the inter-harvest as well as the cattle productivity in the state of Minas Gerais, Brazil. This paper appraises the financial possibility of enhancing the use of the available feedlot infrastructure, considering the current commercialization form. Three mutually exclusive projects are contrasted, taking into account the same facilities, different months of sales and the level of use of the infrastructure. The cash flow analysis associated with the Monte Carlo simulation technique is used to quantify the projects' revenue and risk. Despite the financial viability observed in the intensive infrastructure use strategy, its stochastic dominance with respect to the less intensive strategy is not observed.

  15. DEMOCRACIA E FILOSOFIA COMO LEGADOS CULTURAIS GREGOS: QUANDO PASSADO E PRESENTE SE ENCONTRAM

    Orlovski, Alessandro; Jabur, Ana Maria Ribeiro Tanajura; FFCL de Ituverava

    2013-01-01

    RESUMO: O presente artigo pretende contribuir para a avaliação do legado cultural que o Ocidente recebeu da civilização grega antiga, principalmente a democracia e a filosofia. Evidencia que o conhecimento, algo tão procurado nos nossos dias, recebeu com a filosofia uma metodologia totalmente nova, já que só na Grécia Antiga ele foi visto como fim em si mesmo. Quanto à democracia, o artigo aponta as limitações históricas dessa primeira experiência, enfatizando, entretanto, a força da inova...

  16. Morfologia de órgãos digestivos e não digestivos de suínos de linhagens modernas durante as fases de crescimento, terminação e pós-terminação = Morphology of digestive and non-digestive organs of pigs from modern lineages during growth, finishing and post-finishing phases

    Jacinta Diva Ferrugem Gomes

    2007-07-01

    Full Text Available O melhoramento genético de suínos levou ao surgimento de diversas linhagens suínas que apresentam elevada capacidade de desenvolvimento de massa muscular. Entretanto, pouco se sabe cientificamente sobre a morfologia de órgãos destes animais, conhecimento que ajuda a elucidar características relacionadas ao desempenho zootécnico como ganho de peso e conversão alimentar em carne magra. Objetivou-se, assim, comparar a morfologia dos órgãos digestivos e não-digestivos de suínos de linhagens modernas ao final das fases de Crescimentos Ie II, Terminação e Pós-terminação. O peso dos órgãos em relação ao peso vivo diminuiu significativamente (p The genetic market makes use of various modern swine genotypes that present high capacity for muscular mass development. These genetic lines have been used in swine production without existing scientificinformation about morphology, knowledge that can elucidate factors related to growth performance, such as weight gain and food conversion in lean meat yield. The aim of this experiment was to compare the morphology of digestive and non-digestive organs of moderngenotypes. At the end of the phases: Growing I, Growing II, Finishing and Post-finishing, the pigs were slaughtered and the organs were weighed. The weight of the organs decreased (p < 0.01 with body development, in agreement with the biological growth of the animals. The morphology of the digestive organs were different (p < 0.06 among lineages, which showed that differences can exist, mainly regarding digestive capacity and, possibly, food intake and efficiency. The length of the small intestine was different (p < 0.06 among lines, which can be an indicative of increased body development due to an extended food exposition area to intestinalcells. The scientific knowledge of swine lines morphology is important because this information can contribute to animal growth performance.

  17. Trauma abdominal penetrante: quando não operar - relato de caso

    Marlon Moda

    2015-10-01

    Full Text Available Introdução: A conduta em ferimento por arma de fogo (FAF abdominalmanteve-se inalterada durante décadas, com a laparotomia diagnóstica sendoobrigatória. No entanto, este conceito tem sido desafiado em alguns centroscom a prática do tratamento não operatório (TNO em casos selecionados.Uma das razões para a relutância em se adotar o TNO em pacientes comferimentos penetrantes de órgãos sólidos é a preocupação com outras lesões,como perfurações de vísceras ocas. Porém, a correta seleção de pacientespermite que o sucesso do tratamento seja atingido. Objetivo: Relatar o caso depaciente vítima de FAF em região dorsal com lesão diafragmática e hepática.Método: Informações obtidas por meio de anamnese, exame físico, e métodosde imagem aos quais o paciente foi submetido e revisão da literatura. Relatodo caso: Paciente jovem, encaminhado à unidade de emergência 60 minutosapós sofrer FAF em região dorsal. Estável hemodinamicamente, apresentavadiscreta dor abdominal a palpação e orifício de entrada de FAF em regiãoparavertebral direita em nível de T12 com projétil palpável em 5ºEIC na linhahemiaxilar direita. Resultado USG FAST negativo e TC de abdome demonstrouperfuração diafragmática e pequena área de contusão hepática e pulmonar,com pouco líquido livre em cavidade abdominal. Optou-se por realizar TNO,tendo o paciente permanecido estável e sem alterações em exames físico elaboratoriais e recebido alta no 6º dia. Conclusões: Na maioria das vezes osangramento de lesão de fígado cessa espontaneamente, em relação à lesãodo diafragma direito, o fígado oferece proteção bloqueando o orifício da lesão,impedindo, a migração das vísceras para o tórax. Dessa forma, a opção derealizar TNO, quando as condições necessárias estão presentes, não é,apenas, cientificamente correta, mas eticamente justificável.

  18. Avaliação econômica de dietas com diferentes níveis de substituição do grão de sorgo por grão de aveia preta para terminação de novilhos em confinamento

    Faturi Cristian

    2003-01-01

    Full Text Available Foi estudada a economicidade da utilização de quatro níveis de substituição (0; 33; 66 e 100% do grão de sorgo (Sorghum bicolor L. Moench por grão de aveia preta (Avena strigosa na fração concentrado da dieta de novilhos, na fase de terminação em confinamento. Os animais, com idade média inicial de 19 meses e peso médio inicial de 381kg, foram alimentados com dieta composta por 60% de volumoso e 40% de concentrado, contendo proteína bruta para ganho de peso de 1,2kg animal-1 dia-1. No período de adaptação de sete dias e na primeira metade do período experimental (35 dias, o volumoso utilizado foi a silagem de sorgo forrageiro, na segunda metade do período experimental (32 dias, o volumoso utilizado foi a silagem de milho (Zea mays. Quando foi utilizada a silagem de sorgo, os custos das dietas por animal por dia foram de R$ 1,062; 0,970; 0,865 e 0,725, respectivamente, para os níveis de substituição de 0; 33; 66 e 100%. Já os custos das dietas para produção de 1kg de ganho de peso foram de R$ 0,82; 0,74; 0,78 e 0,65, respectivamente. Quando foi utilizada a silagem de milho, os custos das dietas aumentaram em função do aumento no consumo de matéria seca e do maior custo de produção da silagem de milho. No entanto, foi mantido o ganho de peso médio diário próximo ao preconizado (1,2kg animal-1. Os custos das dietas por animal por dia que continham silagem de milho foram de R$ 1,401; 1,208; 1,063 e 0,906 e R$ 1,083; 1,011; 0,799 e 0,916 para produção de 1kg de ganho de peso, respectivamente, para os níveis de substituição de 0; 33; 66 e 100%. Os custos totais das diferentes dietas por animal no período de 67 dias foram de R$ 82,517; 72,959; 64,587 e 54,645, sendo obtida uma receita bruta por animal de R$ 95,22; 92,20; 89,66 e 77,46, originando uma diferença positiva de R$ 12,70; 19,24; 25,07 e 22,81 por animal, respectivamente, para os níveis de substituição de 0; 33; 66 e 100%.

  19. Ractopamina e fitase em dietas para suínos na fase de terminação Ractopamine and phytase in diets for finishing pigs

    Anderson Corassa

    2009-11-01

    Full Text Available O objetivo neste estudo foi avaliar os efeitos da ractopamina e da enzima fitase sobre o desempenho e as características de carcaça de suínos na fase de terminação. Foram utilizados 354 suínos machos castrados do tipo comercial, de mesma origem e com peso inicial de 94,1 ± 5,7 kg, distribuídos em delineamento experimental de blocos ao acaso, com seis tratamentos e cinco repetições. A unidade experimental continha 11 ou 12 animais. Como tratamentos, avaliaram-se as seguintes dietas: controle, formulada com base na tabela de necessidades nutricionais; dieta A, controle com ajuste nutricional para uso de ractopamina; dieta A com fitase; dieta A com ractopamina; dieta A com ractopamina e fitase; e dieta A com ractopamina e fitase com parte das exigências de cálcio e fósforo disponível atendida pela enzima. O experimento durou 21 dias e ao final os animais foram abatidos para avaliação de carcaças. Os resultados foram comparados por contrastes ortogonais. O consumo de ração não foi influenciado pelas dietas. A dieta com níveis proteico e aminoacídico ajustados e sem ractopamina não melhorou o desempenho dos animais em comparação à dieta controle. A ractopamina teve efeito no ganho de peso e na conversão alimentar ao final do período de 21 dias, além do peso pré-abate, peso de carcaça quente, rendimento de carcaça, carne magra total e índice de bonificação. A inclusão de fitase em dietas contendo ractopamina de forma a fornecer cálcio e fósforo disponível acima das exigências de suínos em terminação não alterou o ganho de peso, a conversão alimentar e as características de carcaça. A ractopamina melhora o desempenho e as características de carcaça. A utilização de fitase em dietas contendo ractopamina em substituição parcial a fontes inorgânicas de minerais possibilita manter o desempenho e as características de carcaça dos animais.The objective of this study was to evaluate the effects of

  20. Ractopamine in diets for finishing gilts Ractopamina em dietas para fêmeas suínas na fase de terminação

    P.H. Watanabe

    2011-04-01

    dietas. A conversão alimentar dos animais melhorou de forma linear com a inclusão de ractopamina na dieta dos animais. Verificaram-se também diferenças significativas na proporção de gordura e carne na carcaça e nos cortes cárneos. Houve efeito linear decrescente da ractopamina sobre a quantidade e profundidade de gordura e efeito linear crescente sobre a porcentagem de carne magra, de carne no pernil e sobre os pesos de semimembranosus e gluteus medius. Dietas para fêmeas suínas em fase final de terminação devem conter 15 mg de ractopamina por kg.

  1. TEORIA DA DESCOBERTA INEVITÁVEL: QUANDO A ILICITUDE DA PROVA É ÚTIL AO DEVIDO PROCESSO LEGAL.TEORIA DA DESCOBERTA INEVITÁVEL: QUANDO A ILICITUDE DA PROVA É ÚTIL AO DEVIDO PROCESSO LEGAL

    Alessandra Rapacci Mascarenhas Prado

    2017-06-01

    Full Text Available A Constituição Federal brasileira veda a utilização de provas ilícitas e suas derivadas no processo penal. Enquanto dispositivo do Código de Processo Penal, com base na teoria da descoberta inevitável, permite a valoração de provas ilícita em determinados casos. Questiona-se, portanto, se a vedação pode ser relativizada quando confrontada com a presunção da inocência e direito à liberdade. Assim, o objetivo do trabalho é analisar se, de fato, e em que medida, esta teoria respeita direitos e garantias fundamentais. A metodologia empregada foi a revisão bibliográfica e a pesquisa documental (julgados do Supremo Tribunal Federal.

  2. SI Notes.

    Nelson, Robert A.

    1983-01-01

    Discusses legislation related to SI (International Systems of Units) in the United States. Indicates that although SI metric units have been officially recognized by law in the United States, U.S. Customary Units have never received a statutory basis. (JN)

  3. Características de carcaça de bovinos zebu e cruzados holandês-zebu (F1) nas fases de recria e terminação

    Alves,Dorismar David; Paulino,Mário Fonseca; Backes,Alfredo Acosta; Valadares Filho,Sebastião de Campos; Rennó,Luciana Navajas

    2004-01-01

    Foram avaliadas as características de carcaça de bovinos Indubrasil e cruzados F1 Holandês-Gir e F1 Holandês-Guzerá, nas fases de recria e terminação. Foram determinados os rendimentos de carcaça e porcentagens dos cortes básicos, comprimento de carcaça, espessura de gordura subcutânea, área de olho de lombo, proporções de músculo, gordura e ossos. Os grupos genéticos não influenciaram os rendimentos de carcaça quente, em relação ao peso vivo e ao peso corporal vazio, e dos cortes básicos, di...

  4. Feedlot finishing cull cows fed diets with different levels of concentrateTerminação em confinamento de vacas de descarte recebendo dietas com diferentes teores de concentrado

    Maryon Guilherme Strack

    2013-03-01

    Full Text Available The purpose of this study was to evaluate the performance and carcass quality and beef and cull cow subjected to diets with two levels of concentrate (1.08 and 1.62% of body weight, whith base in dry matter durind the feedlot finishing. In this study were used twenty cull cows of the breed Aberdeen Angus, Charolais, Caracu, Canchim and Charolais x Caracu whith a mean age of 7.2 years. The average weight gain during the termination was similar between levels 1.08 and 1.62% (1.81 and 2.00 kg/day, respectively. However, animals in the 1.62% group consumed much digestible energy (46.13 Mcal / day compared to the lowest level (38.32 Mcal / day, showing similarity (P > 0.01 in the values of conversion food (6.78 and 6.93 kg dry matter / kg weight gain and energy efficiency (21.68 and 23.40 between the two groups. In feedlot finishing cull cows with an average age of 7.5 years, the increase of the concentrate from 1.08 to 1.62% of body weight based on dry matter based on corn silage, no benefits productive performance of cows nor the quality characteristics of meat. Increasing the concentrate level in the diet of this category can cause greater haunch thickness and better carcass conformation in feedlot finishing.O objetivo do presente estudo foi avaliar o desempenho e a qualidade da carcaça e da carne de vacas de descarte submetidas a dietas com dois teores de concentrado (1,08 e 1,62% do peso vivo, com base na matéria seca durante o processo de terminação em confinamento. Foram utilizadas 20 vacas de descarte, de raça mestiça, que compõem a formação do composto Purunã, Aberdeen Angus, Charolês, Caracu, Canchim e Caracu x Charolês com idade média de 7,2 anos. Independente do nível de concentrado o ganho de peso médio durante a terminação foi semelhante entre os teores 1,08 e 1,62% (1,81 e 2,00 kg/ dia, respectivamente. No entanto, os animais do grupo 1,62% consumiram maior quantidade energia digestível (46,13Mcal/dia em relação ao

  5. Utilização da fitase em dietas com ou sem farelo de arroz desengordurado para suínos em crescimento/terminação Use of phytase in diets with or without defatted rice bran for growing/finishing pigs

    Maria do Carmo Mohaupt Marques Ludke

    2002-09-01

    Full Text Available Este trabalho foi conduzido com o objetivo de comparar a eficiência de diferentes níveis de fitase em relação à suplementação de fosfato inorgânico (fosfato bicálcico, quando adicionados em dietas sem e com farelo de arroz desengordurado (FAD. Foram utilizados 128 suínos com peso inicial médio de 21,2 ± 2,4 kg, alojados em baias coletivas, para avaliar o desempenho nas fases de crescimento e terminação. Os suínos foram abatidos com peso médio de 95,4 ± 5,3 kg e coletado o osso metacarpo para determinação do cálcio e do fósforo. Foram usados oito tratamentos, sendo quatro dietas sem FAD (milho e farelo de soja e quatro dietas com 30% de inclusão de FAD, nas quais foram adicionados níveis de 0, 750 ou 1000 UF (Unidades de Fitase/kg. Foi observado que adicionar fitase, tanto em dietas sem FAD quanto em dietas com FAD, melhora a disponibilidade do fósforo orgânico. Com os níveis de 750 e 1000 UF/kg adicionados em ambas as dietas, sem suplementação de fosfato bicálcico, não houve prejuízo sobre o desempenho dos animais. Entretanto, as características ósseas são prejudicadas se as dietas com fitase não forem suplementadas com a fonte de fósforo inorgânico.The objective of this work was to compare the efficiency of different levels of phytase with the use of inorganic phosphate (dicalcium phosphate when added to diets with or without defatted rice bran (DRB. One hundred and twenty eight pigs with average initial weight of 21.6 ± 2.4 kg were housed in collective boxes for the pig performance evaluation in the growing and finishing phase. The pigs were slaughtered with an average weight of 95.42 ± 5.3 kg and the metacarpus bones were collected to determine the calcium and phosphorus content. Eight treatments were used with four diets being formulated without DRB (corn-soybean meal and the other four diets with DRB. The phytase levels added in the diets were 0, 750 or 1000 PU/kg of the diet. It was observed that

  6. Cloridrato de ractopamina em dietas para suínos em terminação = Ractopamine hidrochloride in diets for finishing pigs

    Matheus Soares da Silva Ferreira

    2011-01-01

    Full Text Available O presente trabalho objetivou avaliar o uso de ractopamina em diferentes niveis de inclusao na dieta para suinos em terminacao. Foram utilizados 50 suinos hibridos comerciais com peso inicial de 74,08 (1,42 kg, aleatoriamente distribuidos em cinco blocos casualizados. Havia dois animais em cada parcela experimental, macho e femea, alimentados com dieta suplementada com ractopamina (0, 5, 10, 15 e 20 ppm durante 28 dias. Foram avaliados desempenho e caracteristicas de carcaca dos animais. A ractopamina melhorou odesempenho, espessura de toucinho, profundidade, area de olho de lombo e rendimento de carne na carcaca, porem sem influenciar no consumo de racao, rendimento de cortes e qualidade da barriga. Exceto a dose de 0 ppm, nao houve diferenca entre as doses de ractopamina utilizadas. O modelo de regressao Linear Response Plateau, aplicado nas variaveis onde houve significancia, estimou o ponto otimo de suplementacao deste aditivo entre 4,09 a 5,14 ppm. Houve aumento de 6,09% no indice de bonificacao quando foi utilizado o nivel de 5 ppm de ractopamina. Conclui-se que a ractopamina e eficaz em melhorar odesempenho e as caracteristicas de carcaca de suinos em terminacao.The present work was carried out to evaluate different inclusion levels of ractopamine in diets for finishing pigs. Fifty animals with initial weight of 74.08 (1.42 kg selected for high meat deposition were used, randomly allotted in five blocks. Each experimental unit had two animals, barrow and gilt, fed diets with ractopamine (0, 5, 10, 15 and 20 ppm for 28 days. Growth performance and carcass characteristics were evaluated. Ractopamine improved final weight, average daily gain, feed:gain ratio, backfat thickness, loin depth, loin eye area and lean tissue yield, but did not influence feed intake, cut yields and belly quality. No differences were found among the doses of ractopamine utilized. The optimum level of supplementation of this additive, as estimated by the Linear

  7. Desempenho bioeconômico de suínos em crescimento e terminação alimentados com rações contendo farelo de coco Bioeconomic performance of growing - finishing pigs fed diet with coconut meal

    José Evânio da Costa Siebra

    2008-11-01

    Full Text Available Objetivou-se avaliar o desempenho de suínos em crescimento e terminação alimentados com rações contendo farelo de coco. Foram utilizados 20 suínos machos castrados mestiços Landrace × Large White com 19,7 ± 2,9 kg de peso vivo inicial e 89,2 ± 5,8 kg de peso vivo final distribuídos em delineamento de blocos casualizados com quatro tratamentos (0, 10, 20 ou 30% de farelo de coco e cinco repetições. Avaliaram-se o desempenho, o ganho de peso médio diário, o consumo de ração médio diário e a conversão alimentar nas fases de crescimento (65 a 107 dias de idade e crescimento-terminação (65 a 149 dias de idade. Os parâmetros econômicos avaliados foram a receita bruta média, o custo médio da alimentação, a margem bruta média e a rentabilidade média. Os melhores resultados de ganho de peso médio diário e receita bruta média na fase de crescimento foram obtidos com o nível de 22,5% de farelo de coco na ração. Na fase de crescimento-terminação, a receita bruta média no período total indica que é possível incluir 22,4% de farelo de coco em dietas para suínos formuladas com farelo residual de milho e farelo de soja.The objective was to evaluate the performance of growing- finishing pigs fed diet with coconut meal. Twenty crossbred Large White × Landrace barrows with initial 19.7 ± 2.9 kg BW and final 89.2 ± 5.8 kg BW were allotted to complete a randomized blocks design with four levels (0, 10, 20 or 30% of coconut meal and five replications. Performance traits, as average daily weight gain, average daily feed intake and feed conversion ratio in grower phase (65 to 107 days old and grower-finisher phase (65 to 149 days old were evaluated. Economic parameters evaluated were: average gross income, average feed cost, gross margin and average return. The best results of average weight daily gain and average gross income in the grower phase were obtained with the level of 22.5% of coconut meal in the diet. In grower

  8. Utilização de glicerol na dieta de suínos em crescimento e terminação Use of glycerol in growing and finishing pig diets

    Bernardo Berenchtein

    2010-07-01

    Full Text Available Objetivou-se avaliar três níveis de utilização de glicerol (0, 3, 6 e 9%, um subproduto da produção de biodiesel, na dieta de suínos em crescimento e terminação sobre o desempenho, as características de carcaça e a qualidade da carne desses animais. Foram utilizados 64 animais Topigs com peso inicial de 33,27 ± 4,66 kg, distribuídos em 32 baias de acordo com o peso inicial, em um delineamento em blocos casualizados com oito repetições (blocos por nível de glicerol. Em cada uma das três fases - crescimento 1 (33,27 a 65,00 kg, crescimento 2 (65,00 a 85,00 kg e terminação (85,00 a 99,97 kg -, os animais receberam rações isonutritivas e água à vontade. Ao atingirem o peso vivo médio de 99,97 ± 1,92 kg, os animais foram abatidos e as carcaças avaliadas quanto ao rendimento de carcaça quente, ao comprimento de carcaça, à espessura de toucinho, à área de olho-de-lombo e quanto à relação gordura/carne. Amostras do músculo longissimus dorsi foram retiradas para medição do pH, da cor e da perda de água por gotejamento. A adição de glicerol na dieta promoveu redução apenas no ganho diário de peso durante os períodos de crescimento 1 e 2. De modo geral, o glicerol pode ser utilizado como ingrediente energético em rações para suínos em crescimento e terminação, pois em níveis de até 9%, não influencia o desempenho, as características de carcaça e a qualidade da carne.The purpose of this work was to evaluate three levels of use of glycerol (0, 3, 6 and 9% a byproduct of biodiesel production, in the diets of growing and finishing swines on performance, on carcass traits and on meat quality. A total of sixty-four Topigs pigs with 33.27 ± 4.66 kg initial body weight were distributed in 32 pens accordingly to the initial weight in a complete random block design with eight replicates (blocks per level of glycerol. In each of the three phases: growth 1 (33.27 to 65.00 kg, growth 2 (65.00 to 85.00 kg and

  9. Níveis de suplementação na terminação de novilhos Nelore em pastagens: aspectos econômicos Supplementation levels in finishing of Nelore steers on pastures: economic aspects

    Robério Rodrigues Silva

    2010-09-01

    Full Text Available Objetivou-se avaliar as respostas econômicas de novilhos Nelore em terminação à suplementação em pastagens de Brachiaria brizantha no Sudoeste da Bahia. O experimento foi desenvolvido no período de agosto a novembro de 2006 em uma área de 52,0 hectares, dividida em oito piquetes de aproximadamente 6,5 hectares. Testaram-se quatro níveis de suplementação com concentrado (controle, 0,3; 0,6 e 0,9% do peso vivo do animal em comparação à suplementação com sal mineral. Os níveis de suplementação elevaram a quantidade de carne produzida por hectare. A curva de crescimento da receita é menos acentuada que a dos custos, o que resulta em achatamento do lucro de acordo com os níveis de suplementação estudados. Os melhores resultados biológicos obtidos com elevados níveis de suplemento não são economicamente sustentáveis, em decorrência do aumento do custo de produção, no entanto, níveis de suplementação inferiores a 0,3% do peso vivo na fase de terminação são viáveis e têm potencial econômico.In this study, it was aimed to evaluate the economic responses of finishing Nellore steers to supplementation of Brachiaria brizantha pastures in southwestern Bahia. The experiment was developed from August to November 2006 in a 52-ha area divided in eight pickets of approximately 6.5 hectares each. It was tested four levels of concentrate supplementation (control, 0.3, 0.6 and 0.9% of the body weight of animal compared to supplementation with mineral salt. Supplementation levels raised the amount of meat produced per hectare. The curve of revenue growth is less sharp than the cost growth curve, resulting in a flattening of profit according to levels of the studied supplementation. The best biological results obtained from high levels of supplements are not economically sustainable because of the increase in the production cost, however, supplementation levels lower than 0.3% of body weight in the finishing phase are feasible

  10. Tilmicosine in rations of swines in growing and finishing phases/ Tilmicosina nas rações de suínos em fases de crescimento e terminação

    Juliana Sarubbi

    2003-05-01

    Full Text Available O experimento foi conduzido visando avaliar o uso do antibiótico Tilmicosina nas concentrações de 100 ppm ou de 200ppm e o uso de Tiamulina (50 ppm mais Cloridrato de Oxitetraciclina (150 ppm no controle de doenças respiratórias principalmente causadas pelo Mycoplasma hyopneumoniae em suínos nas fases de crescimento e terminação. Foram utilizadas duas granjas comerciais, denominadas A e B, com distintos padrões sanitários. Utilizou-se no 945 animais, sendo 639 da granja A e 306 da granja B. Avaliou-se o desempenho dos animais nas fases de crescimento e terminação, a classificação (escore de lesões nos pulmões, o Índice de Eficiência Econômica e o Índice de Custos Médios dos tratamentos experimentais. Não houve diferença (P>0,05 entre os tratamentos quanto ao desempenho zootécnico e ao escore de lesões nos pulmões. A concentração de 100 ppm de Tilmicosina foi eficiente e economicamente viável no controle da pneumonia micoplasmática.The experiment was conducted to evaluate the use of 100 ppm of Tilmicosine antibiotic or 200 ppm and the use of Tiamulin (50 ppm plus Oxitetracicline Cloridate (150 ppm to control of respiratories diseases caused mainly by Mycoplasma hyopneumoniae in swines in growing and finishing phases. The experiment used two pigs farms (A and B with different sanitaries standarts. It was used 945 swines, been 639 animals in farm A and 306 animals in farm B. The experiment evaluated the performance of animals in the growing and finishing phases, the classification (score of lesions in lungs, and the economic efficiency and the costs of the experimental treatments. There were no difference (P>0.05 between the treatments to the performance and to the lesions scores in lungs for A and B farms. The concentration of 100 ppm of Tilmicosine was efficient and economically viable to the control of mycoplasmal pneumonia.

  11. Influence of feeding regime and finishing system on lamb muscle fiber and meat quality Influência do regime alimentar e do sistema de terminação sobre as fibras musculares e a qualidade da carne de cordeiros

    Sarita Bonagurio Gallo

    2009-11-01

    Full Text Available The study verified the influence of different nutritional levels of the dams, before parturition, the weaning age of the lambs and the finishing system on lamb muscle fiber morphology and meat quality. Ile-de-France × Bergamacia crossbred dams grazing on natural grassland were divided into two groups: 1 nutritional supplement 30 days before the parturition (SUPL, and 2 no nutritional supplement (NS. These groups were further subdivided by weaning age of the lambs, which corresponded to either 45 or 60 days. The weaned lambs from each of the previous groups were also divided into different finishing systems: confined and fed a complete diet (CD, confined and fed hay (H and kept on grassland (P. The lambs were slaughtered at 30 kg live weight (CD and P, or at 150 days of age (H. The carcasses were cooled at 4ºC/24h. The analyzed variables were: longissimus dorsi muscle fiber morphophysiology, post mortem myofibrillar fragmentation (at 0, 3 and 7 days post mortem, meat pH and temperature. There was no effect of supplementation of dams or weaning age of the lambs for the evaluated variables. The frequency of slow-oxidative (SO, fast-oxidative-glycolytic (FOG and fast-glycolytic (FG muscle fiber types was not altered by the treatments, but the fiber cross-sectional area was smaller for the lambs finished only on hay, and the meat pH values and temperature were lower and the myofibrill fragment dimensions were smaller. As time maturation increased from 0 to 3 and 7 days post mortem, there was a decrease in the length of the myofibrill fragments. The diet of the lambs which were maintained confined and fed only with hay was nutritionally inferior when compared with all the others, and this changed the quality of the meat compared to the finishing systems on grassland or confined and fed complete diet.Avaliou-se a influência dos níveis nutricionais da ovelha antes do parto, da idade à desmama e do sistema de terminação sobre as fibras musculares

  12. Quando os dados contrariam as previsões estatísticas: os casos de êxito escolar nas camadas socialmente desfavorecidas

    Nadir Zago

    2000-07-01

    Full Text Available Como explicar as situações que apresentam claras evidências de êxito escolar quando a realidade social e cultural do aluno é desfavorável a sua escolarização? Sem pretender dar conta desta questão apresentamos, neste trabalho, alguns dados de pesquisas com famílias de meios populares que vivenciaram situações que demonstram adaptação escolar e maior tempo de permanência de seus filhos no sistema de ensino, se comparadas às estatísticas sobre a realidade educacional brasileira. Contrariando a visão genérica e patologizante de famílias dos meios populares, o trabalho mostra o erro em que incorremos quando nos apoiamos nos padrões das camadas médias para avaliar as práticas observadas nos meios socialmente desfavorecidos.

  13. INFEÇÃO CONGÉNITA POR CITOMEGALOVÍRUS: E QUANDO UM CASO FOGE À REGRA?

    Andreia Meireles

    2016-07-01

    Full Text Available Introdução: A infeção por citomegalovírus (CMV é a infeção congénita mais frequente nos países desenvolvidos. A maioria deve-se à primoinfeção materna durante a gravidez, embora possa também ocorrer em mulheres previamente imunes por reativação/reinfeção vírica. A demonstração de seroconversão IgG para o CMV é o melhor método para o diagnóstico de primoinfeção materna. Se a grávida apresenta IgG e IgM positivos não se pode assegurar que a infeção seja muito recente, sendo indispensável o estudo da avidez da IgG. A presença de baixa avidez indica uma primoinfeção materna recente, aconselhando--se a realização de estudos diagnósticos no feto e no recém-nascido (RN. A maioria é assintomática ao nascimento, porém é a principal causa de surdez neurossensorial e atraso psicomotor de origem infeciosa. Caso Clínico: RN de termo, parto hospitalar por ventosa e com rotura de bolsa de águas prolongada. Nos antecedentes obstétricos destaca-se positividade de IgG e IgM para CMV, com baixa avidez no 2º trimestre e infeção do trato urinário por E. Coli no 3º trimestre. Ao exame objetivo não apresentava particula- ridades relevantes. Do estudo analítico salienta-se proteína C reativa elevada, pesquisa de CMV na urina por biologia molecular positiva e virémia de 822 cópias/mL. As ecografias transfon- tanelares (Eco TF revelaram sinais sugestivos de vasculopatia lenticuloestriada e calcificações nos gânglios da base. As avaliações auditiva e oftalmológica não revelaram alterações. Iniciou terapêutica anti-vírica com valganciclovir. Comentários: A altura da primoinfeção materna é o determinante mais importante das sequelas para o RN, uma vez que a gravidade da clínica é maior quando ocorre no 1º ou 2º trimestre. A decisão de tratar um RN com terapêutica antivírica é baseada na presença/ausência de sintomas e no seu estado imunológico. O caso clínico descreve um RN assintomático ao

  14. Adenocarcinoma do pulmão – Até quando a boa resposta?

    Maria José Simões

    2008-10-01

    Full Text Available Resumo: Relatase o caso de uma doente de 75 anos que em Out./2004 recorreu ao SU por queixas de tosse, febre e toracalgia esq. Com características pleuríticas. A semiologia pulmonar foi compatível com derrame pleural esq. E procedeu-se à respectiva investigação clínica. Existiam parâmetros de infecção elevados no contexto de um exsudado pleural. A tomografia computorizada evidenciou derrame pleural e espessamento no segmento anterior do LSD, cuja bronco-fibroscopia apenas visualizou alterações inflamatórias. Em Fev./2005 verifica-se recidiva do derrame pleural. A tomografia computorizada referia agora a existência de densificação nodular adjacente ao BLSE e língula. Em conjunto com a equipa de cirurgia torácica, foi decidido procederse a videoto-racoscopia. Durante a realização da técnica houve necessidade de conversão para toracotomia e o pós-operatório foi moroso. O exame histológico revelou um CPNPC – adenocarcinoma. A doente iniciou quimioterapia de primeira linha e em Mar./2006 sur-giu metastização óssea. Efectua quimioterapia de segunda linha, tendo-se mantido em doença estável, e em Jul./2007 inicia terapêutica com erlotinib que mantém actualmente, com boa tolerância, sem queixas álgicas e sem progressão da doença sob 13 meses de terapêutica. E até quando esta resposta?Rev Port Pneumol 2008; XIV (Supl 3: S71-S77 Abstract: A 75 year old woman was observed at the emergency department with cough, hyperthermia and thoracic pain in October 2004.A pleural effusion was identified and studied. Thorax CT scan evidenced a pleural effusion and thickening in the RSL anterior segment but bronchofibroscopy only identified inflammatory changes. In February 2005 the pleural effusion relapsed and the CT scan showed nodular densification adjacent to LSLB and lingual. VATS converted to thoracotomy was preformed and followed by a long

  15. Apreciação econômica da terminação em confinamento de novilhos Red Angus superjovens abatidos com diferentes pesos Economic evaluation of feedlot finished Red Angus young steers slaughtered with different weights

    João Restle

    2007-08-01

    Full Text Available Objetivou-se com este estudo avaliar economicamente a terminação em confinamento de novilhos Red Angus superjovens alimentados até atingirem os pesos de abate pretendidos de 340, 370, 400 e 430 kg (pesos reais obtidos: 340, 373, 401 e 434 kg. O número de dias necessários para atingir os respectivos pesos foi de 114, 144, 168 e 209 dias aos 12, 13, 14 e 15 meses de idade. Os animais foram alimentados com dieta contendo 13,26% de PB e relação volumoso (silagem de milho:concentrado de 56,21:43,79 na MS. Na formação e condução da lavoura para produção de volumoso, as operações mais representativas do custo total/ha foram, em ordem decrescente, adubação de plantio (21,21%, adubação de cobertura (12,86%, sementes (11,40% e controle de plantas daninhas (5,78% e de pragas (4,52%. A alimentação (volumoso mais concentrado foi o componente de custo mais representativo (média de 77,2% se desconsiderado o custo de compra do animal. Da alimentação, o concentrado foi o componente mais oneroso (58,3%. O custo/kg de ganho de peso incrementou linearmente com o aumento no peso de abate, sendo de 1,94; 2,06; 2,15 e 2,34 R$/kg, respectivamente, para os pesos de abate de 340, 373, 401 e 434 kg. O incremento no peso de abate de 340 para 434 kg reduziu a lucratividade da terminação em confinamento de novilhos Red Angus superjovens.The objective of this experiment was to conduct an economic evaluation of feedlot finished Red Angus young steers fed to reach slaughter weights (SW of 340, 370, 400 and 430 kg (actual SW of: 340, 373, 401 and 434 kg. Animals spent 114, 144, 168 and 209 days to reach the target SW at 12, 13, 14 and 15 months of age, respectively. Animals were fed a diet containing 13.26% crude protein and a forage (corn silage to concentrate ratio of 56:44 (dry matter basis. The most representative operational costs (total costs/ha for crop establishment and management were: crop fertilization (21.21%, top spreading fertilization (12

  16. Bio-economicity of the finishing phase on feedlot of crossbred young bulls slaughtered at different body weights Bioeconomicidade da fase de terminação em confinamento de bovinos mestiços abatidos com diferentes pesos

    Renius Mello

    2009-01-01

    Full Text Available The objective in this work was to evaluate the economicity of the finishing phase on feedlot of F1 Red Angus × Nellore (½ RA ½ N and Blond D'Aquitaine × Nellore (½ BA ½ N crossbred young bulls slaughtered at 480, 520 and 560 kg of body weight. Thirty-six F1 crossbred young bull with 20 months of initial average age: 18 ½RA½ N and 18 ½N½ BA were allotted to a completely randomized design in a 2 × 3 factorial arrangement (genetic group × slaughter weight, with six replicates. The ½ BA ½ N young bulls slaughtered at 480 kg had the highest carcass gain (kg/day, feed efficiency, gross income (R$/day, gross profit of feed (R$/day, break-even cost of the diet (@/t DM and cost:benefit ratio. The ½ BA ½ N young bulls also had higher dressing percentage than ½ RA ½ N young bulls. As the slaughter weight rised the dressing percentage, feed:gain ratio, feed cost (R$/@ and R$/day and break-even point (kg/day increased; while the gross feed profit (R$/@ decreased. The bioeconomic multivariate nutritional index had better association with the profitability of the finishing phase of beef cattle on feedlot. Sensitivity analysis did not influence the results obtained. The benefit was lower than the feed cost from exchange relation of four (4 @/t DM of the diet. F1 Blond D'Aquitaine × Nellore crossbred young bulls slaughtered at 480 kg of body weight showed the best bioeconomic efficiency.Objetivou-se verificar a economicidade da fase de terminação em confinamento de tourinhos mestiços F1 Red Angus × Nelore (½ RA ½ N e F1 Blonde D'Aquitaine × Nelore (½ BA ½ N abatidos com 480, 520 e 560 kg de peso corporal. Trinta e seis bovinos mestiços F1, tourinhos, com 20 meses de idade média inicial: 18 ½ RA ½ N e 18 ½ BA ½ N foram distribuídos a um delineamento experimental inteiramente casualizado em arranjo fatorial 2 × 3 (grupos genético × peso de abate, com seis repetições. Os tourinhos ½ BA ½ N abatidos com 480 kg apresentaram

  17. Avaliação de poluentes aéreos em instalações de creche e terminação de suínos Evaluation of aerial pollutants in nursery and finishing swine housing

    Carlos Augusto de Paiva Sampaio

    2007-04-01

    Full Text Available Esta pesquisa foi desenvolvida em duas instalações para suínos nas fases de creche e terminação, em duas salas cada, em granjas localizadas no município de Salto, SP, com os objetivos de avaliar a concentração de amônia e poeira e a presença de fungos, além de estimar os riscos de exposição ocupacional a esses agentes ambientais. As avaliações foram realizadas conforme preceituam as normas NR-15, NIOSH e ACGIH. Os resultados indicaram diferença significativa nas concentrações de amônia em relação aos horários, às instalações e aos períodos do dia. Estes também indicam negligência para a questão da ventilação sanitária nas instalações de creche, com conseqüentes teores mais altos de amônia, e que estes estão vinculados à circulação de ar no interior das instalações, ao manejo dos dejetos e da cortina, à tipologia da construção e às condições de clima local, além da lotação e da densidade de suínos. A concentração de poeira total foi mais alta nos prédios de creche (0,84-9,16mg m-3 do que nos de terminação (0,84-3,34mg m-3, enquanto que a poeira respirável foi mais alta na creche, ficando inferior a 3,67mg m-3 e dentro dos limites de insalubridade para o trabalhador. Foram encontrados fungos do gênero Aspergillus, Penicillium e Neurospora em suspensão no ambiente interno das instalações estudadas.This research was developed in two swine housings in the phases of nursery and finishing: in two pens each, in two farms located at Salto County, SP, with the objective to evaluate ammonia and concentrations, and fungi presence besides estimating the occupational risk of exposure to these environmental agents. The evaluations were done according to recommended by the norms NR-15, NIOSH e ACGIH. Results indicated significant difference in ammonia concentration in relation to the hour, the housing and to the day period. They also indicate negligence to sanitary ventilation matter in nursery

  18. Intake and digestibility of diets containing castor bean meal detoxified to finish of sheep Consumo e digestibilidade de dietas contendo farelo de mamona destoxificado para ovinos em terminação

    Marcônio Martins Rodrigues

    2011-03-01

    Full Text Available The effect of including detoxified castor bean meal to substitute soy bean meal was evaluated to sheep finishing diets on intake, digestibility and energy value of the diets. A positive linear effect was verified for ether extract intake and acid detergent fiber with an intake raise of 0.015 g/BW0.75 in ether extract and 0.090 g/BW0.75 in acid detergent fiber per each unit percentage of detoxified castor bean meal added to the diet. There was maximun value in hemicellulose intake when included 39.55% of detoxified castor bean meal to the diet. Negative linear effect was verified for dry matter, organic matter, crude protein, total carbohydrates digestibility, respectively, with 0.0536, 0.0507, 0.0705 and 0.0572% decreases per unit percentage of detoxified castor bean meal added. Positive quadratic effect was verified for neutral detergent fiber and hemicellulose digestibility with 54.93 and 64.53% maximum in levels of the 38.6 and 31.4, respectively. Detoxified castor bean meal inclusion does not influence dry matter and nutrients intake, attending these animal class nutritional requirements. Including detoxified castor bean meal decreases dry mater, organic matter, crude protein, total carbohydrates digestibility, being in this situation recommended the inclusion of to 33% in the diet by allowing high neutral detergent fiber and hemicellulose digestibility. Despite these effects, the energy value of the diets is not influenced by the inclusion of detoxified castor bean meal.Avaliou-se a substituição do farelo de soja pelo farelo de mamona destoxificado em dietas para ovinos em terminação. O consumo de extrato etéreo e fibra em detergente ácido foi linear positivo, com aumento de 0,015 e 0,090g/UTM por unidade percentual de inclusão de farelo de mamona destoxificado, respectivamente. O consumo máximo de hemicelulose ocorreu para dietas que continham 39,55% de farelo de mamona destoxificado. A digestibilidade da matéria seca, mat

  19. Níveis de energia líquida e ractopamina para leitoas em terminação sob conforto térmico Net energy and ractopamine levels for finishing gilts under thermal comfort

    Mariana Souza de Moura

    2011-09-01

    Full Text Available Objetivou-se com este estudo avaliar níveis de energia líquida e ractopamina em dietas para leitoas em terminação sob conforto térmico. Foram utilizadas 40 leitoas com peso inicial de 67,4 ± 3,4 kg, distribuídas em delineamento de blocos ao acaso em esquema fatorial 2 × 4, composto de dois níveis de ractopamina, 0 e 20 ppm, em combinação aos níveis de energia líquida de 2.300; 2.424; 2.548 e 2.668 kcal/kg de ração, com cinco repetições, considerando cada animal uma unidade experimental. O período experimental teve duração de 28 dias. A temperatura do ar, a umidade relativa, a temperatura de globo negro e o índice de temperatura de globo e umidade foram de 21,5 ± 2,8ºC, 91,7 ± 6,8%, 21,7 ± 2,9ºC e 70,1 ± 3,7, respectivamente. Houve interação entre níveis de energia líquida e ractopamina, uma vez que a inclusão de 20 ppm de ractopamina em dietas contendo 2.668 kcal de energia líquida/kg de ração ocasionou redução da espessura de toucinho e aumento da porcentagem de carne magra e do índice de bonificação de carcaças. A inclusão de 20 ppm de ractopamina proporcionou aumento do ganho diário de peso e melhora na conversão alimentar, proporcionando maior peso de carcaça quente e aumentando a quantidade de carne magra nas carcaças. Dietas suplementadas com 20 ppm de ractopamina melhoram o desempenho e aumentam a produção de carne em leitoas em terminação. A ractopamina é ineficiente em reduzir a deposição de gordura e aumentar o percentual de carne magra na carcaça de leitoas alimentadas com dietas contendo baixa concentração de energia. O nível de 2.300 kcal de energia líquida/kg de ração atende à exigência nutricional de leitoas em terminação sob conforto térmico.This research was conducted to evaluate the net energy and ractopamine levels in the diet of finishing gilts kept under thermal comfort conditions. Forty gilts were used, with initial weight of 67.4 ± 3.4 kg, distributed in a

  20. Digestibilidade do fósforo de alimentos de origem vegetal determinada em suínos em crescimento e terminação Phosphorus digestibility from vegetal feed origins determined in growing and finishing pigs

    Silvano Bünzen

    2008-07-01

    Full Text Available Objetivou-se determinar os coeficientes de digestibilidade aparente (CDAP e verdadeira (CDVP do fósforo de 11 alimentos de origem vegetal utilizados na alimentação de suínos. Foram utilizados 78 animais mestiços distribuídos em um delineamento experimental inteiramente casualizado, em arranjo fatorial 2 × 2 × 13 (metodologia × fase × tratamento e três repetições por tratamento (alimento-teste. Os coeficientes de digestibilidade foram avaliados utilizando-se, simultaneamente, duas metodologias (coleta total de fezes e uso de indicador fecal, Cr2O3 em duas fases de produção (crescimento e terminação, cada uma com 36 suínos com 25,0 ± 3,0 e 60,0 ± 5,0 kg de peso corporal, respectivamente. Determinaram-se os coeficientes de digestibilidade de 11 alimentos, uma ração-referência e uma ração com baixo conteúdo de fósforo total (0,03% para estimativa das perdas de fósforo endógeno nas duas fases de desenvolvimento. Os valores médios de CDAP e CDVP do fósforo encontrados com suínos em crescimento e terminação foram, respectivamente, 45,01 e 68,32% para o milho; 31,3 e 66,97% para o sorgo; 31,84 e 41,31% para o farelo de glúten de milho (22% PB; 38,28 e 53,20% farelo de glúten de milho (60% PB; 32,42 e 40,61% para o farelo de algodão (30% PB; 37,50 e 43,95% para o farelo de algodão (40% PB; 50,76 e 55,74% para o farelo de trigo; 38,75 e 52,19% para o farelo de soja; 33,61 e 41,21% para o concentrado protéico de soja; 41,67 e 55,81% a soja integral extrusada e, 56,84 e 66,56% para a levedura desidratada de cana de açúcar. Não foram encontradas diferenças entre os CDAP e CDVP determinados pelas metodologias de coleta total de fezes e de indicador fecal. Na fase de terminação, os coeficientes de digestibilidade aparente e verdadeira dos alimentos testados foram maiores que os obtidos na fase de crescimento.The coefficients of apparent (CADP and true (CTDP digestibility of phosphorus of eleven plant feed of vegetal

  1. Lo Sport e le sue storie: l'esperienza aquilana, quando lo sport supera l'emergenza

    Marco Pasini

    2013-04-01

    Full Text Available Tale progetto di ricerca, della durata di 12 mesi (da luglio 2010 a luglio 2011 e commissionato dal Ministero del Lavoro e delle Politiche Sociali , intende ricostruire il tessuto sociale di 400 giovani delle scuole secondarie di I e II livello de L’Aquila e provincia attraverso lo sport. Tessuto sociale leso e sfaldato in seguito all’evento sismico che il 6 aprile 2009 colpì il capoluogo abruzzese, in cui oltre all’improvvisa e immediata perdita di tutti i beni materiali sono venuti meno anche i canali di socializzazione primari e secondari. Una quotidianità da ricostruire anche e soprattutto attraverso il concetto di attività sportiva volta, in questo caso più che mai, alla realizzazione di cittadinanza, partecipazione, formazione umana, integrazione e coesione sociale. Con particolare attenzione agli sport di squadra che permettono uno sviluppo affettivo, cognitivo, relazionale e una maggiore comprensione/costruzione della propria personalità. Dunque lo sport come strumento principe per l’inclusione sociale, in quanto gioco che esalta l’armonia e le dinamiche di cooperazione. Lo sport, in generale, va considerato un fatto sociale; è un fenomeno sociale, un sistema culturale - che agisce tra comunicazione, economia e politica - e si presenta come una costruzione sociale. Costruzione generata da significati e rappresentazioni collettive.

  2. A influência dos valores humanos na satisfação do consumidor quando da ocorrência de uma surpresa positiva

    Alfredo Montelongo Flores

    2014-01-01

    A surpresa positiva tem sido citada como um elemento responsável pelos altos níveis da satisfação do consumidor. O objetivo do presente trabalho foi estudar a influência dos valores humanos com a satisfação do consumidor quando da ocorrência de uma surpresa positiva. Para esse fim, foi efetuada uma survey aleatória online via a plataforma de Amazon Mechanichal Turk. A partir disso, foram mensurados os construtos conceituais surpresa, satisfação do consumidor e a tipologia de valores humanos d...

  3. Quando a conversão ao Cristianismo não foi o suficiente. O caso dos judeus-conversos espanhóis

    Follador, Kellen Jacobsen

    2009-01-01

    Desde o surgimento do Cristianismo, os judeus sofreram restrições diversas dentro da sociedade cristã. Durante a Idade Média o conflito judaico-cristão se acirrou e por vários momentos os judeus foram perseguidos, convertidos ao Cristianismo ou mortos. Apesar de esses acontecimentos se repetirem por toda a Cristandade, foi na Península Ibérica, reduto secular de comunidades judaicas, que os conflitos se intensificaram. Quando as conversões não mais conseguiram resolver a questão judaico-crist...

  4. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  5. Níveis de cromo-ácido nicotínico em dietas de suínos em crescimento e terminação Levels of chromium-nicotinic acid in diets for growing-finishing pigs

    Gustavo Julio Mello Monteiro de Lima

    1999-03-01

    Full Text Available O objetivo deste estudo foi avaliar os efeitos de níveis crescentes de cromo dietético, na forma de ácido nicotínico, sobre o desempenho e nas características de carcaça de suínos. Noventa e seis suínos (Landrace x Large White x Duroc, machos castrados e fêmeas, com peso médio inicial de 25,93±0,57 kg foram distribuídos ao acaso em baias de dois animais do mesmo sexo, segundo um esquema fatorial 6 x 2 (6 níveis de Cr e 2 sexos. Uma dieta basal (0 ppb Cr foi suplementada com 100, 200, 300, 400 e 500 ppb de Cr, na forma de Cr-ácido nicotínico, incluído através do premix vitamínico. Os animais, aos 70 dias de experimento, foram pesados, abatidos, e as carcaças avaliadas utilizando-se a pistola Hennessy e o Método Brasileiro de Classificação de Carcaças. Houve efeito significativo (P0,05 do nível de Cr sobre qualquer dos parâmetros estudados, seja de desempenho ou de avaliação de carcaça por qualquer dos métodos utilizados. A adição de níveis de até 500 ppb de Cr, na forma de Cr-ácido nicotínico, não altera o desempenho e a qualidade de carcaça de suínos em crescimento e em terminação.Ninety-six barrows and gilts (Landrace x Large White x Duroc, with average initial weight of 25.93±0.57 kg, were used in order to evaluate the effects of Cr on performance and carcass characteristics, in a random block design, according to a 6 x 2 factorial arrangement (6 Cr levels x 2 sexes. A basal diet (0 ppb Cr was supplemented with 100, 200, 300, 400 e 500 ppb Cr, as Cr-nicotinic acid, added to the vitamin premix. On the 70th day of the experimental period, all animals were weighted, slaughtered and had their carcass evaluated using Hennessy probe and the Brazilian Carcass Classification Method. There was a significant sex effect (P0.05. The addition of up to 500 ppb Cr in the diet, in the form of Cr-nicotinic acid, did not improve performance and carcass traits of growing-finishing pigs.

  6. Avaliação a campo da vacina enterisol ileitis através de parâmetros zootécnicos e sanitários em suínos nas fases de crescimento e terminação.

    Ricardo L. Pierozan

    2005-01-01

    Entre as causas de diarréia em suínos de crescimento e terminação, a infecção por L. intracellularis é uma das mais relevantes e é uma das principais justificativas para o uso excessivo de antimicrobianos na ração. O presente experimento visou a avaliar uma alternativa ao uso de medicamentos para o controle da infecção pela L. intracellularis, a vacinação. O teste foi realizado com uma vacina avirulenta já licenciada para uso em outros países (Enterisol® Ileitis) e que em avaliações realizada...

  7. Uso da geoestatística na avaliação de variáveis ambientais em galpão de suínos criados em sistema "wean to finish" na fase de terminação

    Medeiros, Brenda B. L.; Moura, Daniella J. de; Massari, Juliana M.; Curi, Thayla M. R. de C.; Maia, Ana Paula de A.

    2014-01-01

    O "wean to finish" é um sistema de criação de suínos que ainda é novo no Brasil, e não existem muitos estudos a respeito do ambiente onde estes animais são criados. Assim, o objetivo deste trabalho foi avaliar o ambiente térmico e aéreo por meio da técnica da geoestatística em galpão de suínos criados no sistema "wean to finish", na fase de terminação, nos horários das 09h, 12h e 15h. A variabilidade dos atributos foi baseada na estatística descritiva dos dados de temperatura, umidade relativ...

  8. Características de carcaça de bovinos zebu e cruzados holandês-zebu (F1) nas fases de recria e terminação Carcass characteristics in zebu and crossbred holstein-zebu (F1) steers in the growing and finishing phases

    Dorismar David Alves; Mário Fonseca Paulino; Alfredo Acosta Backes; Sebastião de Campos Valadares Filho; Luciana Navajas Rennó

    2004-01-01

    Foram avaliadas as características de carcaça de bovinos Indubrasil e cruzados F1 Holandês-Gir e F1 Holandês-Guzerá, nas fases de recria e terminação. Foram determinados os rendimentos de carcaça e porcentagens dos cortes básicos, comprimento de carcaça, espessura de gordura subcutânea, área de olho de lombo, proporções de músculo, gordura e ossos. Os grupos genéticos não influenciaram os rendimentos de carcaça quente, em relação ao peso vivo e ao peso corporal vazio, e dos cortes básicos, di...

  9. Morfologia de órgãos digestivos e não digestivos de suínos de linhagens modernas durante as fases de crescimento, terminação e pós-terminação - DOI: 10.4025/actascianimsci.v29i3.553 Morphology of digestive and non-digestive organs of pigs from modern lineages during growth, finishing and post-finishing phases - DOI: 10.4025/actascianimsci.v29i3.553

    Mariane de Paula Ishi

    2007-12-01

    Full Text Available O melhoramento genético de suínos levou ao surgimento de diversas linhagens suínas que apresentam elevada capacidade de desenvolvimento de massa muscular. Entretanto, pouco se sabe cientificamente sobre a morfologia de órgãos destes animais, conhecimento que ajuda a elucidar características relacionadas ao desempenho zootécnico como ganho de peso e conversão alimentar em carne magra. Objetivou-se, assim, comparar a morfologia dos órgãos digestivos e não-digestivos de suínos de linhagens modernas ao final das fases de Crescimentos I e II, Terminação e Pós-terminação. O peso dos órgãos em relação ao peso vivo diminuiu significativamente (p The genetic market makes use of various modern swine genotypes that present high capacity for muscular mass development. These genetic lines have been used in swine production without existing scientific information about morphology, knowledge that can elucidate factors related to growth performance, such as weight gain and food conversion in lean meat yield. The aim of this experiment was to compare the morphology of digestive and non-digestive organs of modern genotypes. At the end of the phases: Growing I, Growing II, Finishing and Post-finishing, the pigs were slaughtered and the organs were weighed. The weight of the organs decreased (p < 0.01 with body development, in agreement with the biological growth of the animals. The morphology of the digestive organs were different (p < 0.06 among lineages, which showed that differences can exist, mainly regarding digestive capacity and, possibly, food intake and efficiency. The length of the small intestine was different (p < 0.06 among lines, which can be an indicative of increased body development due to an extended food exposition area to intestinal cells. The scientific knowledge of swine lines morphology is important because this information can contribute to animal growth performance.

  10. A Análise do Discurso aplicada na letra da música ‘Até Quando?’ de Gabriel O Pensador

    Joseane Silva Pinto

    2012-04-01

    Full Text Available O presente artigo consiste em um breve estudo à luz da teoria da Análise do Discurso onde tem por objetivo analisar a música intitulada  Até Quando?  do  rapper, Gabriel O Pensador. Nos ateremos a aspectos da música como ideologias e interdiscursividade,elementos constituintes de um discurso direto, cuja a intenção é a persuasão do indivíduo receptor, a um deslocamento do lugar cômodo para um espaço onde seja produtor da história e não um produto social manipulável. O discurso de Gabriel indaga sobre o lócus discursivo dos indivíduos, e faz com que o sujeito que ouve sua música reflita seu papel social.Palavras-chave: Análise do Discurso; ideologia; interdiscursividade; rap; Eni Orlandi.

  11. Seleção inicial e caracterização parcial de rizóbios de tabuleiros costeiros quando associados ao guandu

    M. F. Fernandes

    2000-06-01

    Full Text Available O objetivo deste trabalho foi selecionar e caracterizar parcialmente rizóbios de tabuleiros costeiros com alta capacidade de fixação biológica do N, quando associados ao guandu. Dezesseis isolados de rizóbios de diferentes regiões desse ecossistema foram avaliados em casa de vegetação da Embrapa Tabuleiros Costeiros (Aracaju, SE. Quatro isolados destacaram-se quanto ao N acumulado (Nac, matéria seca da parte aérea (MSPA, área foliar (AF e matéria seca de nódulos (MSN. A MSN correlacionou-se com a MSPA, AF e Nac. A relação N-ureído/N-total na seiva xilemática correlacionou-se com Nac e MSN. Três desses isolados foram caracterizados (R1, R5 e R11 e apresentaram crescimento rápido e acidificaram o meio de cultura com manitol. Comparado ao R1 e R5, o isolado R11 foi o mais sensível aos antibióticos e o menos tolerante ao Al e às temperaturas elevadas.

  12. Performance and leadership style: when do leaders and followers disagree? / Desempenho e estilo de liderança: quando líderes e liderados divergem

    Maria Aparecida Muniz Jorge Dias

    2017-04-01

    liderança, confrontando a perspectiva dos líderes com a dos liderados. Originalidade/lacuna/relevância/implicações: A principal contribuição deste estudo é comparar as perspectivas dos líderes e dos liderados, relacionando o nível de desempenho das equipes de trabalho com o estilo de liderança no setor público. Esta pesquisa oferece dados empíricos que podem auxiliar os gestores no desenvolvimento de políticas e práticas de gestão de pessoas voltadas para o desenvolvimento de lideranças e redução da lacuna entre líderes e liderados. Principais aspectos metodológicos: Realizou-se uma pesquisa com 315 servidores do poder executivo do estado de Minas Gerais. Foram aplicados questionários padronizados baseados em instrumentos amplamente testados. Síntese dos principais resultados: Os resultados indicam que, para os líderes, o estilo de liderança transformacional é responsável pelo elevado desempenho das equipes, confirmando a literatura sobre liderança. Na perspectiva dos liderados, o alto desempenho é resultante da liderança transacional, isto é, o líder negociador é preferido ao líder motivador. Finalmente, foi possível identificar ainda que os níveis de desempenho medidos pelo governo são superestimados quando confrontados com a medição realizada pelos pesquisadores. Principais considerações/conclusões: A dinâmica de gestão de pessoas por resultado na administração pública reforça comportamentos que exigem líderes transacionais para garantir o desempenho das equipes, contrariando a teoria sobre estilos de liderança e desempenho. No entanto, quando o gestor é promovido, as características transformacionais parecem ser mais indicadas para melhorar o desempenho das equipes de gestores.

  13. Scarica il testo completo in PDF Quando la religione si interseca con la tutela di genere: quale impatto sulle dinamiche dell’accoglienza? (prime osservazioni a margine di Cass., sez. I, 24 novembre 2017, n. 28152

    Adelaide Madera

    2018-04-01

    ABSTRACT: The intersection between immigration, citizenship, integration in the EU countries is a challenging topic for scholars and religion is becoming a crucial factor. Transnational space allows the development of new meanings, negotiation of identities, interaction of religious actors and practices and integration/participation has an impact on the identity of migrants. The increase of migrations from non-European countries, and the impact of new religious needs underlines the question of whether religious belonging is a factor of either empowerment or disempowerment in the host society. At the same time, migrations in an era of economic crisis emphasize skepticism and hostility towards Islamic groups; refugees and asylum seekers, and the questions connected with international protection have become other controversial issues, contributing to the development of a growing anti-immigrant attitude. Modern democracies are expected to offer answers to increasing demands of international protection; at the same time international protection is becoming a strategic tool to obtain hospitality in European countries, and to avoid the limits connected  to access for economic reasons. Recent Italian case law witnesses the development of a gender-sensitive perspective and focuses on the increasing link between religion, gender and international protection.

  14. L’ergonome et l’agent: quand la perspective anthropologique s’invite = O ergonomista e o agente: quando a perspectiva antropológica se convida

    Castejon, Christine

    2014-01-01

    Full Text Available A partir de uma breve troca verbal que foi tomada como exemplo, a autora explicita como entende o conceito corpo-si elaborado pelo filósofo Yves Schwartz durante o processo que o conduziu de uma pesquisa sobre a experiência a uma antropologia da atividade. Isto fez surgir um questionamento sobre o lugar da linguagem, que a autora julga insuficiente nesta construção. De fato, o filósofo fala frequentemente dos limites da linguagem, mas tem tendência a deixar para a especialidade linguística um discurso mais completo ou mais informado sobre a linguagem. Com efeito, linguistas propagam a abordagem ergológica propondo teorias da atividade da linguagem. A autora propõe abrir uma nova perspectiva. Apoiando-se na obra de Henri Meschonnic, pensador francês da linguagem (igualmente poeta e tradutor, ela propõe avaliar o que faz a linguagem ao corpo-si e pensar na recíproca corpo-si e linguagem

  15. SI units in radiology

    Iyer, P S [Bhabha Atomic Research Centre, Bombay (India). Div. of Radiation Protection

    1978-11-01

    The proposal of the International Commission on Radiation Units and Measurements that the special units of radiation and radioactivity-roentgen, rad, rem and curie-be replaced by the International System (SI) of Units has been accepted by international bodies. This paper reviews the resons for introducing the new units and their features. The relation between the special units and the corresponding SI units is discussed with examples. In spite of anticipated difficulties, the commission recommends a smooth and efficient changeover to the SI units in ten years.

  16. Como conhecer o trabalho quando o trabalho não é mais o trabalho? How to recognize work when is not work anymore?

    Abdallah Nouroudine

    2011-01-01

    Full Text Available Como conhecer o trabalho quando o trabalho não é mais o trabalho? Esta pergunta comporta dois aspectos: o primeiro é de ordem metodológica (como conhecer o trabalho?. O segundo diz respeito a este objeto hipotético que seria 'o trabalho que não é mais o trabalho'. Se este último designa o trabalho não mercantil e o trabalho informal por distinção (ou oposição ao trabalho mercantil, então o 'trabalho que não é mais o trabalho' continua sendo, na realidade, um trabalho. Todavia, ele é diferente do trabalho mercantil, que, de acordo com uma postura etnocêntrica, supostamente constitui uma referência para a avaliação da natureza das atividades humanas. Mas, qualquer que seja o modo de trabalho dominante num coletivo de vida, uma análise da norma na atividade dita informal, do duplo ponto de vista do conceito e da experiência, permite sugerir que uma atividade humana socializada não pode ser verdadeiramente informal. Algumas balizas metodológicas permitem tentar compreender as atividades supostamente informais, chamando a atenção para os princípios epistemológicos da ergonomia e da ergologia.How to recognize work when is not work anymore? This question entails two aspects: the first one is a question of method (how to recognize work?. The second one is about this hypothetical subject that is 'work when it is not work anymore?'. If we talk about non-profit and informal work opposed to 'standard' work, then 'work that is not work anymore' is actually still work. Although, from an ethnocentric point of view, it is different from 'standard' work, which is supposed to be a reference in order to identify the nature of human activities. However, when analyzing the norm in informal activities, whatever the prevailing kind of work in a society, and from a conceptual as well as from a practical point of view, allows us to consider that a social human activity cannot be informal. A few methodological points will help us to

  17. Levedura de cana-de-açúcar spray dry na alimentação de suínos na fase de crescimento e terminação Sugar cane spray dry yeast on growing and finishing pigs feeding

    A.R. Poveda-Parra

    2013-02-01

    Full Text Available Foi estudado o valor nutricional (digestibilidade total e ileal de duas leveduras spray dry (cana-de-açúcar - LEV35 e cerveja+cana-de-açúcar - LEV40 e o efeito da sua inclusão em rações para suínos na fase de crescimento e terminação. Os valores de ED (kcal/kg da LEV35 e da LEV40 foram 3.496 e 3.901 e EM (kcal/kg foram 3.475 e 3.862, respectivamente. Os valores de lisina, metionina+cistina e treonina digestível para a levedura de cana-de-açúcar e da levedura de cerveja+cana-de-açúcar são 2,66 e 2,64, 1,11 e 1,03, 1,95 e 1,92, respectivamente. No desempenho foram utilizados 40 suínos com peso inicial de 34,39± 7,57kg (crescimento e de 62,45± 5,68kg (terminação, distribuídos em delineamento inteiramente casualizado com cinco níveis de inclusão (0, 5, 10, 15 e20% da LEV35. Na fase de crescimento, houve piora do GDP e da CA com o aumento da inclusão. Na fase de terminação, porém, houve efeito quadrático para o CDR, sendo o melhor nível 3.32%. Da mesma forma, ocorreu piora linear para o GDP, CA, peso de carcaça quente, rendimento de carcaça fria e peso de pernil. Os resultados sugerem que a adição de níveis crescentes da LEV35 pode prejudicar o desempenho dos suínos.The nutritional value of two spray dry yeast (sugar cane - SCYSD and brewer+sugar cane - BYSD and their inclusion effects on growing and finishing pigs feeding was studied. The DE (kcal/kg values for SCYSD and BYSD were 3.496 and 3.901 and for ME (kcal/kg they were 3.475 and 3.862. The values of digestible lysine, methionine+cistine and threonine for SCYSD and BYSD were: 2.66 and 2.64%; 1.11 and 1.03%: 1.95 and 1.92%. 40 pigs with initial weight of 34.39±7.57kg (growing and 62.45±5.68kg (finishing, allotted in a completely randomized design with five levels of SCYSD inclusion were used in the performance assay. In the growing phase, there was an impairing on DWG and F:G, however, in the finishing phase, DFI presented a quadratic effect, being 3

  18. Inclusão de diferentes níveis de casca de soja moída em dietas isoenergéticas para suínos em crescimento e terminação Different inclusion levels of soybean hull on isoenergetic growing-finishing pig diets

    Arlei Rodrigues Bonet de Quadros

    2008-04-01

    Full Text Available O experimento foi conduzido com o objetivo de verificar o efeito da inclusão de diferentes níveis de casca (CS de soja em dietas isoenergéticas para suínos em crescimento e terminação. Quarenta suínos híbridos, machos castrados e fêmeas, com peso inicial de 27,8 ± 2,1kg, foram bloqueados por peso e distribuídos ao acaso em cinco tratamentos, com quatro repetições de dois animais/baia (unidade experimental. Os tratamentos consistiram da inclusão de 0; 4; 8; 12 e 16% de CS moída (2,5mm em dietas isoenergéticas (16,4 e 15,0% PB e 3.385 e 3.390kcal ED kg-1 para as fases de crescimento e terminação, respectivamente. Nenhuma variável de desempenho foi influenciada pela inclusão de CS nas dietas. Os níveis crescentes de CS promoveram redução linear da espessura de toucinho (ET, do rendimento de carcaça quente (RCQ e do rendimento de carcaça fria (RCF e aumento da quebra por resfriamento (QR. Para as variáveis peso de carcaça quente (PCQ e peso de carcaça fria (PCF, foram observados efeitos quadráticos, sendo os menores valores observados com 8,0% de inclusão de CS. O aumento do nível de CS na dieta elevou a QR, que piorou o rendimento de carcaça e diminuiu a ET. Não houve diferença para comprimento de carcaça, peso de pernil, área de olho de lombo e relação carne: gordura. Os resultados sugerem que a inclusão de até 16% de CS nas dietas dos suínos em crescimento/terminação não altera seu desempenho e pode produzir carcaças mais magras.The experiment was carried out to verify the effect of different soybean hull (SH inclusion levels on isoenergetic growing-finishing pig diets. Forty crossbred pigs, barrows and gilts, with 27.8 ± 2.1kg of BW, were blocked according to the weight and distributed in a randomized way in five treatments, with four replicates of two pigs per pen (experimental unit. The treatments consisted of the inclusion of 0; 4; 8; 12 and 16% of ground SH (2.5mm on isoenergetic diets (16.4 and

  19. Composição corporal de garrotes inteiros de três grupos genéticos nas fases de recria e terminação Body composition of young bulls of three genetic groups in the growing and finishing phases

    Henrique Jorge Fernandes

    2004-12-01

    Full Text Available Com os objetivos de avaliar a composição corporal e identificar características corporais mensuráveis capazes de estimar o tamanho relativo de componentes corporais, foram utilizados 36 garrotes inteiros, sendo 12 Nelore, 12 ½ Holandês x ½ Zebu e 12 ½ Caracu x ½ Zebu. Em cada grupo genético, havia seis animais de cada fase de produção: recria e terminação, com peso inicial próximo a 225 kg e 330 kg, respectivamente. Os animais foram mantidos em regime de confinamento até o abate, realizado de acordo com o peso: 310 a 340 kg PV para os animais na fase de recria e 420 a 470 kg PV para aqueles na fase de terminação. Foi fornecida a mesma dieta a todos os animais, com 50% da matéria seca à base de concentrado e 50% de silagem pré-seca de coastcross. Utilizou-se um fator geral de 0,8693 para conversão do peso vivo em peso de corpo vazio (obtido a partir dos dados de todos os animais do experimento. Animais provenientes de seleção para corte na categoria terminação apresentaram maiores rendimentos de carcaça (59,2% que aqueles de origem leiteira (56,33%. Grupos genéticos de raças com aptidão leiteira mostraram tamanhos relativos de órgãos 9% maior, 21% menos tecido adiposo na carcaça, bem como maior participação da gordura interna no total de tecido adiposo corporal. Em razão das baixas correlações encontradas, não parece confiável estimar os tamanhos relativos dos componentes corporais estudados a partir das características corporais mensuráveis analisadas.To evaluate the body composition, and to identify measurable body characteristics capable to estimate the relative size of body components, 36 young bulls (12 Nellore, 12 ½ Holstein x ½ Zebu, and 12 ½ Caracu x ½ Cebu were used. In each genetic group, six animals of each production phase were used: growing animals with initial weight of 225 kg and the finishing ones with initial weight of 330 kg. The animals were maintained in confinement regime to reach

  20. De-metaphorizing and becoming animal: when the animal looks back. A reading of Marian Engel’s Bear = Desmetaforizando e tornando-se animal: quando o animal retorna o olhar. Uma leitura do romance Bear, de Marian Engel

    Alessandra Meoni

    2011-01-01

    transcender a herança cultural ocidental. Quando tenta-se dar uma representação literária ao animal, é extremamente importante adotar certas medidas as quais, seguindo uma trajetória como tornar-se animal de maneira genuína edeterminada, garantirá sua independência e evitará reduzi-lo a representações metaforicamente antropomórficas. Este artigo destaca como, a partir deste ponto de vista, alguns romances inscritos pelo pós-colonialismo, em que fábulas de animais frequentemente mostram a maneira das interações entre homens e animais e como elas são construídas em relação umas com as outras, propiciando casos interessantes. O principal interesse aqui é o romance Bear da escritora canadense Marian Engel, no qual a escritora trata de assuntos escabrosos entre uma mulher e um urso: por meio de abordagem radical à sua realidade física, a mulher, primeiro, reconhece o ursoe depois aceita a sua alteridade. Por outro lado, parece que o urso ‘mostra’ uma atitude póscolonial pela resistência subversiva à alegorização antropomórfica tipicamente ocidental. Agarrando-se a si mesmo e a sua animalidade e escolhendo ficar ‘mudo’, o urso assume o papel de um ‘catalizador perceptivo’, criador de pensamentos, e, consequentemente, um transformador no mundo, de acordo com uma das estéticas da percepção, sugerindo que o olhar do animal poderia ser a melhor perspectiva para observar a realidade e, de modo especial, a nós mesmos.

  1. O tango e o relógio: dois percursos de leitura em Quando Dio ballava il tango, de Laura Pariani

    Vera Horn

    2003-07-01

    Full Text Available L´emigrazione italiana vista dalla parte delle donne, il riscatto della memoria al suono del tango. Sedici donne che si incrociano costantmente raccontano le vicende dell´emigrazione italiana in Argentina, in un´arco di anni che comprende due secoli. tutte le sofferenze e dolori degli emigrati e dei loro discendenti. Il riscatto della loro memoria tramite Corazón, che raccoglie le fila del romanzo e ricrea de storie di famiglia per rincontrarsi col suo passato. Il tango pervade le vicende narrate, como sottofondo musicale ed inevitabile passo di danza. Un viaggio a ritroso in cerca della memoria e dell´identità.

  2. Microstructure and Mechanical Property of SiCf/SiC and Cf/SiC Composites

    Lee, S P; Cho, K S; Lee, H U; Lee, J K; Bae, D S; Byun, J H

    2011-01-01

    The mechanical properties of SiC based composites reinforced with different types of fabrics have been investigated, in conjunction with the detailed analyses of their microstructures. The thermal shock properties of SiC f /SiC composites were also examined. All composites showed a dense morphology in the matrix region. Carbon coated PW-SiC f /SiC composites had a good fracture energy, even if their strength was lower than that of PW-C f /SiC composites. SiC f /SiC composites represented a great reduction of flexural strength at the thermal shock temperature difference of 300 deg. C.

  3. Carcass and meat characteristics of crossbred steers submitted to different nutritional strategies at growing and finishing phases Características da carcaça e da carne de novilhos mestiços submetidos a diferentes estratégias nutricionais na recria e terminação

    Pedro Leonardo de Paula Rezende

    2012-05-01

    Full Text Available This study was carried out to evaluate the effects of different nutritional strategies at growing and finishing phases on carcass and meat characteristics from 24 crossbred steers predominatly Holstein, slaughtered at 15 months of age and with 395.00kg of body weight. At the growing phase, the animals were maintained on Brachiaria brizantha pasture with two levels of supplementation in amounts equivalent to 0.5 or 1.0% of body weight. Subsequently, the animals were finished in feedlot with diets composed of 50 or 80% of concentrate. The high level of the concentrate at the finishing phase increased significantly (PObjetivou-se com este estudo avaliar os efeitos de diferentes estratégias nutricionais na recria e terminação sobre as características da carcaça e da carne de 24 bovinos mestiços com predominância Holandês, abatidos com 15 meses de idade e 395,00kg de peso vivo. Na fase de recria, os animais foram mantidos em pastagem de Brachiaria brizantha com dois níveis de suplementação energética em quantidade equivalente a 0,5 ou 1,0% do peso vivo. Posteriormente, os animais foram terminados em confinamento com dietas compostas por 50 ou 80% de concentrado. Constatou-se efeito significativo (P<0,05 do nível de concentrado na terminação sobre o rendimento de carcaça quente em favor do nível alto (50,16 vs 48,62%. O menor nível de suplementação na recria resultou em maior (P<0,05 percentual de gordura na carcaça (25,61 vs 23,39%, mas não influenciou os percentuais de músculos e ossos. O nível alto de suplementação na recria proporcionou carne mais macia, requerendo menor força de cisalhamento (4,72 vs 6,66kg cm-3 e de coloração vermelha mais clara (3,88 vs 2,89 pontos. O nível alimentar alto na recria mostrou-se mais atrativo por ter efeitos positivos sobre algumas características importantes da carcaça e da carne, notadamente a maciez.

  4. Mirada desde Europa, una encrucijada de los medios en América Latina y España: quando la Anaconda empieza a mudar la piel

    Manuel Chaparro Escudero

    Full Text Available Pensar, escribir desde Europa, o sobre Europa obliga hoy a hacer la insidiosa observación de si Europa es capaz de mirar otra cosa que no sea así misma y si, además, tiene algo nuevo que decir. La Europa que soñamos, la Europa que sirvió de modelo a las llamadas sociedades democráticas se diluye en el dibujo de una sociedad más económica que social, más especulativa que solidaria. No es una afirmación ni gratuita, ni exagerada. Europa tiene poco que decir porque hace rato que perdió su brújula. Sólo los movimientos ciudadanos surgidos en el último año (entre ellos el 15-M sugieren un fin de ciclo de una forma de hacer política que se resiste a cambiar. Frente a esta situación América Latina empieza desde hace algunos años a ofrecer regulaciones de medios más comprometidas con los intereses ciudadanos.

  5. Interfacial characterization of CVI-SiC/SiC composites

    Yang, W.; Kohyama, A.; Noda, T.; Katoh, Y.; Hinoki, T.; Araki, H.; Yu, J.

    2002-01-01

    The mechanical properties of the interfaces of two families of chemical vapor infiltration SiC/SiC composites, advanced Tyranno-SA and Hi-Nicalon fibers reinforced SiC/SiC composites with various carbon and SiC/C interlayers, were investigated by single fiber push-out/push-back tests. Interfacial debonding and fibers sliding mainly occurred adjacent to the first carbon layer on the fibers. The interfacial debonding strengths and frictional stresses for both Tyranno-SA/SiC and Hi-Nicalon/SiC composites were correlated with the first carbon layer thickness. Tyranno-SA/SiC composites exhibited much larger interfacial frictional stresses compared to Hi-Nicalon/SiC composites. This was assumed to be mainly contributed by the rather rough surface of the Tyranno-SA fiber

  6. Sub-barrier fusion of Si+Si systems

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Bourgin, D.; Čolović, P.; Corradi, L.; Courtin, S.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Urbani, M.; Szilner, S.; Zhang, G. L.

    2017-11-01

    The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC) calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3- excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  7. Sub-barrier fusion of Si+Si systems

    Colucci G.

    2017-01-01

    Full Text Available The near- and sub-barrier fusion excitation function has been measured for the system 30Si+30Si at the Laboratori Nazionali di Legnaro of INFN, using the 30Si beam of the XTU Tandem accelerator in the energy range 47 - 90 MeV. A set-up based on a beam electrostatic deflector was used for detecting fusion evaporation residues. The measured cross sections have been compared to previous data on 28Si+28Si and Coupled Channels (CC calculations have been performed using M3Y+repulsion and Woods-Saxon potentials, where the lowlying 2+ and 3− excitations have been included. A weak imaginary potential was found to be necessary to reproduce the low energy 28Si+28Si data. This probably simulates the effect of the oblate deformation of this nucleus. On the contrary, 30Si is a spherical nucleus, 30Si+30Si is nicely fit by CC calculations and no imaginary potential is needed. For this system, no maximum shows up for the astrophysical S-factor so that we have no evidence for hindrance, as confirmed by the comparison with CC calculations. The logarithmic derivative of the two symmetric systems highlights their different low energy trend. A difference can also be noted in the two barrier distributions, where the high-energy peak present in 28Si+28Si is not observed for 30Si+30Si, probably due to the weaker couplings in last case.

  8. Photoluminescence of Er-doped Si-SiO2 and Al-Si-SiO2 sputtered thin films

    Rozo, C.; Fonseca, L.F.; Jaque, D.; Sole, J.Garcia

    2008-01-01

    Er-doped Si-SiO 2 and Al-Si-SiO 2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er 3+ : 4 I 13/2 → 4 I 15/2 emission of Er-doped Si-SiO 2 yields a maximum intensity for annealing at 700-800 deg. C. 4 I 13/2 → 4 I 15/2 peak emission for Er-doped Al-Si-SiO 2 at 1525 nm is shifted from that for Er-doped Si-SiO 2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4 I 13/2 → 4 I 15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4 I 13/2 → 4 I 15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4 I 11/2 level in Er-doped Si-SiO 2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions

  9. Il mito della precarietà: quando la precarietà è un valore che decostruisce l’immaginario della precarietà

    Antonio Casillo

    2011-07-01

    Full Text Available Oggi la ricerca del posto “fisso” sembra essere il sogno irraggiungibile di molti giovani precari e la “flessibilità”, una parola d’ordine con cui si aspirava a riformare il mondo del lavoro e che tanto in voga sembrava essere negli anni ’90, è diventata sinonimo di incertezza, precarietà, se non addirittura sfruttamento. Ma c’era chi proprio nel lavoro che oggi definiremo precario, vedeva l’unica possibilità per restare libero dalle leggi di mercato e dai potenti poteri editoriali Newyorkesi. In questo articolo proviamo a gettare uno sguardo al mito letterario con cui, il rifiutare un posto fisso, significava rivendicare la propria libertà, un mito romantico certo, e sicuramente distante dalla realtà, ma che ha affascinato un’intera generazione di scrittori, poeti, musicisti. Da Jack London, passando attraverso la San Francisco Renaissance e la Beat Generation, fino ad arrivare al fenomeno della così detta generazione Hippy, il sogno americano sembrava essere quello di una frontiera mobile in cui, la strada, sembrava non avere mai fine.

  10. SiCloud

    Jiang, Cathy Y.; Devore, Peter T.S.; Lonappan, Cejo Konuparamban

    2017-01-01

    The silicon photonics industry is projected to be a multibillion dollar industry driven by the growth of data centers. In this work, we present an interactive online tool for silicon photonics. Silicon Photonics Cloud (SiCCloud.org) is an easy to use instructional tool for optical properties...

  11. SI: The Stellar Imager

    Carpenter, Kenneth G.; Schrijver, Carolus J.; Karovska, Margarita

    2006-01-01

    The ultra-sharp images of the Stellar Imager (SI) will revolutionize our view of many dynamic astrophysical processes: The 0.1 milliarcsec resolution of this deep-space telescope will transform point sources into extended sources, and simple snapshots into spellbinding evolving views. SI s science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI s prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era by imaging a sample of magnetically active stars with enough resolution to map their evolving dynamo patterns and their internal flows. By exploring the Universe at ultra-high resolution, SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magnetohydrodynamically controlled structures and processes in the Universe.

  12. U-Mo/Al-Si interaction: Influence of Si concentration

    Allenou, J.; Palancher, H.; Iltis, X.; Cornen, M.; Tougait, O.; Tucoulou, R.; Welcomme, E.; Martin, Ph.; Valot, C.; Charollais, F.; Anselmet, M.C.; Lemoine, P.

    2010-01-01

    Within the framework of the development of low enriched nuclear fuels for research reactors, U-Mo/Al is the most promising option that has however to be optimised. Indeed at the U-Mo/Al interfaces between U-Mo particles and the Al matrix, an interaction layer grows under irradiation inducing an unacceptable fuel swelling. Adding silicon in limited content into the Al matrix has clearly improved the in-pile fuel behaviour. This breakthrough is attributed to an U-Mo/Al-Si protective layer around U-Mo particles appeared during fuel manufacturing. In this work, the evolution of the microstructure and composition of this protective layer with increasing Si concentrations in the Al matrix has been investigated. Conclusions are based on the characterization at the micrometer scale (X-ray diffraction and energy dispersive spectroscopy) of U-Mo7/Al-Si diffusion couples obtained by thermal annealing at 450 deg. C. Two types of interaction layers have been evidenced depending on the Si content in the Al-Si alloy: the threshold value is found at about 5 wt.% but obviously evolves with temperature. It has been shown that for Si concentrations ranging from 2 to 10 wt.%, the U-Mo7/Al-Si interaction is bi-layered and the Si-rich part is located close to the Al-Si for low Si concentrations (below 5 wt.%) and close to the U-Mo for higher Si concentrations. For Si weight fraction in the Al alloy lower than 5 wt.%, the Si-rich sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 , when the other sub-layer (close to U-Mo) is silicon free and made of UAl 3 and U 6 Mo 4 Al 43 . For Si weight concentrations above 5 wt.%, the Si-rich part becomes U 3 (Si, Al) 5 + U(Al, Si) 3 (close to U-Mo) and the other sub-layer (close to Al-Si) consists of U(Al, Si) 3 + UMo 2 Al 20 . On the basis of these results and of a literature survey, a scheme is proposed to explain the formation of different types of ILs between U-Mo and Al-Si alloys (i.e. different protective layers).

  13. Nonvolatile field effect transistors based on protons and Si/SiO2Si structures

    Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G.; Devine, R.A.B.

    1997-01-01

    Recently, the authors have demonstrated that annealing Si/SiO 2 /Si structures in a hydrogen containing ambient introduces mobile H + ions into the buried SiO 2 layer. Changes in the H + spatial distribution within the SiO 2 layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO 2 /Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO 2 structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO 2 /Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties

  14. Gd-Ni-Si system

    Bodak, O.I.; Shvets, A.F.

    1983-01-01

    By X-ray phase analysis method isothermal cross section of phase diagram of the Gd-Ni-Si system at 870 K is studied. The existence of nine previously known compounds (GdNisub(6.72)Sisub(6.28), GdNi 10 Si 2 , GdNi 5 Si 3 , GdNi 4 Si, GdNi 2 Si 2 , GdNiSi 3 , GdNiSi 2 , Gd 3 Ni 6 Si 2 and GdNiSi) is confirmed and three new compounds (GdNisub(0.2)Sisub(1.8), Gdsub(2)Nisub(1-0.8)Sisub(1-1.2), Gd 5 NiSi 4 ) are found. On the base of Gd 2 Si 3 compound up to 0.15 at. Ni fractions, an interstitial solid solution is formed up to 0.25 at Ni fractions dissolution continues of substitution type. The Gd-Ni-Si system is similar to the Y-Ni-Si system

  15. Si-to-Si wafer bonding using evaporated glass

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  16. Oblique roughness replication in strained SiGe/Si multilayers

    Holy, V.; Darhuber, A.A.; Stangl, J.; Bauer, G.; Nützel, J.-F.; Abstreiter, G.

    1998-01-01

    The replication of the interface roughness in SiGe/Si multilayers grown on miscut Si(001) substrates has been studied by means of x-ray reflectivity reciprocal space mapping. The interface profiles were found to be highly correlated and the direction of the maximal replication was inclined with

  17. Applications of Si/SiGe heterostructures to CMOS devices

    Sidek, R.M.

    1999-03-01

    For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

  18. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  19. Quando "falha a fala" e "fala a bala": lingua(gem e violência em Cidade de Deus, de Paulo Lins

    Rita Gabrielli Pereira

    2018-04-01

    Full Text Available Cidade de Deus traz em si a história da construção do conjunto habitacional, cujo nome intitula o romance, e de sua transformação em uma das favelas mais violentas do Rio de Janeiro, por meio do entrecruzamento das histórias de Cabeleira, Bené, Zé Pequeno e Busca-Pé. Concebendo o romance, nos atos da escrita e da leitura, como uma enunciação (BENVENISTE, 1989a; 1989b; 1995a; 1995b entre autor e leitor, constituída por outras enunciações — entre narrador e narratário e entre personagens — a partir do "ato ficcional" (ISER, 2002 do autor, vamos nos guiar por essa tessitura de/entre histórias para rastrear o modo como Lins relaciona linguagem e violência. Palavras-chave: Lingua(gem, Subjetividade, Violência ______________________________ Cidade de Deus tells the history of the construction of the housing complex that entitles the novel and its transformation process into one of the most violent slums of Rio de Janeiro. By treating the novel as an enunciation (BENVENISTE, 1989a; 1989b; 1995a; 1995b between author and reader, which is made of other enunciations − between narrator and narratee and between characters −, based on the author´s “fictional act”(ISER, 2002, we intend to analyze the way how Lins relates language and violence. Keywords: Language, Subjectivity, Violence.

  20. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  1. Strained Si/SiGe MOS transistor model

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  2. Mundos na ponta do lápis: desenhos de crianças pequenas ou de como estranhar o familiar quando o assunto é criação infantil

    Gobbi, Marcia Aparecida

    2014-01-01

    Frequentemente naturalizados, os desenhos infantis constituem complexas relações que dependem de características sociais, históricas, culturais e econômicas de seus criadores. O estudo meticuloso sobre os desenhos criados na infância, e em especial, entre as crianças pequenas, quando compreendidos como artefatos culturais e documentos históricos, pode contribuir para se respeitar e conhecer lógicas de construção de culturas naquilo que caracteriza a infância. Tarefa que pode...

  3. Ganho de peso, conversão alimentar, ingestão diária de nutrientes e digestibilidade de garrotes não-castrados de três grupos genéticos em recria e terminação Weigh gain, feed conversion, daily ingestion of nutrients and apparent digestibility of bulls of three genetic groups in growing and termination

    Henrique Jorge Fernandes

    2004-12-01

    Full Text Available Para se avaliar o desempenho (ganho de peso e conversão alimentar, o consumo de nutrientes e a digestibilidade aparente de vários nutrientes, foram utilizados 36 garrotes inteiros, 12 Nelore, 12 ½ sangue Holandês-Nelore e 12 ½ sangue Caracu-Nelore. Foram utilizados animais em recria, com peso inicial próximo a 205 kg, e animais em terminação, com aproximadamente a 310 kg. Os animais foram mantidos em regime de confinamento até o abate, realizado de acordo com peso: 310 a 330 kg PV para os animais em recria e 450 a 480 kg PV para aqueles em terminação. Foi fornecida a mesma dieta a todos os animais, com 50% da matéria seca à base de concentrado e o restante de silagem pré-seca de coastcross. Os animais foram alimentados ad libitum e pesados a cada 28 dias. Foram retiradas amostras semanais de ração e de sobras individuais, que foram agrupadas em amostras para cada período de 28 dias. Realizou-se um ensaio de digestibilidade no 50º dia de experimento. Não se observou efeito significativo de grupo genético sobre o consumo de matéria seca (6,06 kg/dia para recria e 9,05 kg/d para a terminação, ganho de peso vivo (0,994 kg/d e 1,293 kg/d para a recria e terminação, respectivamente ou para os coeficientes de digestibilidade dos nutrientes analisados. Os animais ½ sangue Caracu-Nelore da categoria recria apresentaram conversão alimentar 30% maior que aqueles dos demais grupos genéticos. A ingestão de NDT esteve, em média, 26% abaixo dos valores preditos pelo NRC (1996 para animais com estes pesos vivos e valores de ganho de peso.Thirty-six young bulls (12 Nellore, 12 ½ crossbred Holstein x Nellore, and 12 crossbred ½ Caracu x Nellore were used to evaluate weight gain, feed conversion, ingestion capacity and apparent digestibility of various nutrients. We use growing and finishing animals. The growing animals had initial weight of 205 kg, and the finishing ones, initial weight of 310 kg. The animals were fedlot to reach

  4. Duração da suplementação de ractopamina em dietas para leitoas em terminação mantidas sob alta temperatura ambiente Duration of ractopamine supplementation in diets for finishing gilts maintained under high temperature environment

    Elizangela Alves da Silva

    2011-02-01

    Full Text Available Este estudo foi realizado com o objetivo de avaliar a duração da suplementação de ractopamina na dieta de leitoas em terminação, mantidas sob alta temperatura ambiente. Foram utilizadas 48 leitoas com peso inicial de 70,4±2,6kg, distribuídas no delineamento de blocos ao acaso, com seis tratamentos (suplementação de ractopamina por 0, 7, 14, 21, 28 e 35 dias pré-abate e quatro repetições, sendo a unidade experimental constituída por dois animais. O peso final e o consumo de ração diário não foram influenciados (P>0,05 pelos tratamentos. O ganho de peso aumentou e a conversão alimentar reduziu linearmente (P0,05 pela duração da suplementação de ractopamina na dieta. O peso dos pulmões, coração, fígado, rins e baço também não foi modificado (P>0,05 pelos tratamentos. Concluiu-se que a inclusão de 20ppm de ractopamina na dieta de leitoas em terminação, mantidas sob alta temperatura ambiente, durante 28 dias, maximiza a resposta de ganho de peso diário e, durante 35 dias, maximiza a resposta para conversão alimentar. Contudo, a inclusão do aditivo não altera as características quantitativas de carcaça e não afeta o desenvolvimento das vísceras.The study was conducted to evaluate the duration of the supplementation of ractopamine in the diet of finishing gilts maintained under high temperature environment. Forty eight females, with initial weight of 70.4±2.6kg were used. The pigs were distributed in randomized blocks design of six treatments (supplementation of ractopamine for 0, 7, 14, 21, 28 and 35 days pre-slaughter and four replications, each experimental unit consisted of two animals. The final weight and daily feed intake were not affected (P>0.05 by treatments. The weight gain increased and the feed conversion decreased linearly (P0.05 by duration of supplementation of ractopamine in the diet. The weights of the lungs, heart, liver, kidneys and spleen were not modified (P>0.05 by treatments. It was

  5. Utilização do farelo de germe de milho desengordurado na alimentação de suínos em crescimento e terminação: digestibilidade e desempenho Utilization of defatted corn germ meal on growing-finishing pigs feeding: digestibility and performance

    Ivan Moreira

    2002-11-01

    Full Text Available Foram conduzidos dois experimentos (Digestibilidade e Desempenho, objetivando avaliar o valor nutricional e a viabilidade de utilização do farelo de germe de milho desengordurado (FGMD em rações de suínos, na fase de crescimento e terminação. I Ensaio de digestibilidade: foram utilizados 12 suínos com peso vivo médio de 42,0±5,4 kg, alojados em gaiolas de metabolismo, em que seis receberam rações compostas de 70% de ração referência e 30% de FGMD e seis receberam ração referência. O FGMD apresentou coeficiente de digestibilidade da energia de 80,98 % e coeficiente de metabolização de 78,04%, o que corresponde a 3.060 kcal de ED/kg e 2.949 kcal de EM/kg. II Ensaio de desempenho: foram utilizados 32 suínos mestiços, sendo metade de fêmeas e metade de machos castrados, com peso inicial médio de 31,9±3,6 kg. Os suínos foram alojados em 16 baias, perfazendo, assim, 2 animais por baia. Os animais receberam ração à vontade, contendo níveis crescentes (0, 15, 30 e 45% de farelo de germe de milho desengordurado. Foi utilizado o delineamento em blocos casualizados, com quatro tratamentos, quatro repetições, com dois animais por unidade experimental. A inclusão de níveis crescentes de FGMD prejudicou o desempenho dos suínos, reduziu a espessura de toucinho e não influenciou a profundidade do lombo, medidas no animal vivo. A análise econômica, considerando o preço do FGMD, sendo 80% do preço do milho, mostrou que o nível de 15% de inclusão do FGMD é o mais econômico, tanto para a fase de crescimento, quanto para a fase de terminação.Two studies (Digestibility and Performance were carried out to evaluate the nutritional value and the feasibility of using defatted corn germ meal (DCGM fed to growing-finishing pigs. I Digestibility trial: Twelve pigs with initial body weight of 42.0±5.4 kg were hold in metabolism cage. Six pigs were fed a diet with 70% of basal diet plus 30% of DCGM and six received basal diet

  6. Utilização da nebulização e ventilação forçada sobre o desempenho e a temperatura da pele de suínos na fase de terminação Effect of nebulization and artificial ventilation on the performance and skin temperature of finishing swine

    Luiz Euquério de Carvalho

    2004-12-01

    Full Text Available O experimento foi realizado com o objetivo de avaliar os efeitos da nebulização e ventilação forçada sobre o desempenho e a temperatura da pele de suínos na fase de terminação. Utilizaram-se 137 animais (Landrace x Large White x Duroc machos castrados e fêmeas, distribuídos em um delineamento de blocos ao acaso, com dois tratamentos de oito repetições por tratamento, com média de oito animais/baia. Os tratamentos utilizados foram: T1 = sem nebulização de água e ventilação forçada e T2 = com nebulização de água e ventilação forçada. Durante o período experimental, a temperatura média observada foi de 26,32ºC (variando de 23,32 a 30,72ºC e a umidade relativa do ar média, de 64,5%. Os resultados não demonstraram diferenças significativas entre os tratamentos utilizados para as variáveis ganho de peso médio diário, consumo de ração médio diário e conversão alimentar. Entretanto, a nebulização de água associada à ventilação forçada apresentou menores valores de temperatura da pele, indicando melhor conforto aos animais. Não é necessário o uso de nebulização e ventilação forçada em instalações para suínos na fase de terminação, pois, apesar da melhoria no conforto dos animais (temperatura da pele, não trouxe benefício sobre o desempenho dos mesmos.An experiment was carried out to evaluate the effects of nebulization and artificial ventilation on the performance and skin temperature of finishing swine. Castrated males and females (n = 137; Landrace x Large White x Duroc were allotted to two treatments by using a radomized bolck design, with eight replicates: T1 = pens without either nebulization or artificial ventilation; T2 = pens with both nebulization and artificial ventilation. There was an average of eight animals per each pen. During the experimental period, average air temperature was 26.32ºC (from 23.32 to 30.72ºC and humidity, 64.5%. No signifgicant effects of treatments on

  7. Quando la fiction produce turismo. Due località per il cinema fantasy a confronto / When fiction produces tourism. Two localities for fantasy cinema in comparison

    Antonio Violante

    2016-05-01

    Full Text Available Dubrovnik, capitale del mondo medioevale fantasy della serie televisiva Game of Thrones, in cui essa è ambientata, è stata sottoposta a una “invasione” turistica non tanto per i suoi pregi in sé, quanto perché le sue strutture fungono da scenario alla fiction, da diventare proprio per questo meritevoli di visita. Si sono organizzati tour alla visita dei luoghi del set, con tanto di merchandising connesso.L’interesse verso gli ksour tunisini utilizzati nelle riprese dei film componenti la saga fantascientifica di Star Wars, ha prodotto un altro caso di turismo cinematografico. Infatti, Star Wars ha inciso profondamente sull’immagine turistica della Tunisia, anche ad anni di distanza dalle riprese colà avvenute.     Il metodo comparativo di indagine su queste località, condotta sulla base della documentazione esistente e di una ricognizione dei luoghi, ha mirato a porre in evidenza le contraddizioni in cui esse sono incorse; infatti, da centri celebri per i loro pregi artistici e architettonici, sono diventate poli di attrazione turistica in quanto  scenari per fiction di successo.   Dubrovnik – the capital of the Medieval fantasy world of the tv show Game of Thrones – has been “invaded” by tourists not just because its own merits, but especially because it is the scenary of the tv fiction and therefore worthy of visiting. There have been tours to set locations and all the connected merchandising. The interest towards the Tunisian ksour used during shooting of the movies within the sci-fi saga Star Wars produced another case of cinema tourism. In fact, Star Wars made a profound impact on Tunisia’s touristic image, despite all the years that have passed since the making of the movie.The comparative method used to analyse these localities, based on existing documentation and first-hand visits aims to highlight the contradictions noticed: in fact, instead of being famous for their artistic and architectural values, they

  8. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    Wang, Hsin Ping; Sun, Ke; Noh, Sun Young; Kargar, Alireza; Tsai, Meng Lin; Huang, Ming Yi; Wang, Deli; He, Jr-Hau

    2015-01-01

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages

  9. Irradiation effect on Nite-SiC/SiC composites

    Hinoki, T.; Choi, Y.B.; Kohyama, A.; Ozawa, K.

    2007-01-01

    Full text of publication follows: Silicon carbide (SiC) and SiC composites are significantly attractive materials for nuclear application in particular due to exceptional low radioactivity, excellent high temperature mechanical properties and chemical stability. Despite of the excellent potential of SiC/SiC composites, the prospect of industrialization has not been clear mainly due to the low productivity and the high material cost. Chemical vapor infiltration (CVI) method can produce the excellent SiC/SiC composites with highly crystalline and excellent mechanical properties. It has been reported that the high purity SiC/SiC composites reinforced with highly crystalline fibers and fabricated by CVI method is very stable to neutron irradiation. However the production cost is high and it is difficult to fabricate thick and dense composites by CVI method. The novel processing called Nano-powder Infiltration and Transient Eutectic Phase (NITE) Processing has been developed based on the liquid phase sintering (LPS) process modification. The NITE processing can achieve both the excellent material quality and the low processing cost. The productivity of the processing is also excellent, and various kinds of shape and size of SiC/SiC composites can be produced by the NITE processing. The NITE processing can form highly crystalline matrix, which is requirement for nuclear application. The objective of this work is to understand irradiation effect of the NITESiC/SiC composites. The SiC/SiC composites used were reinforced with high purity SiC fibers, Tyranno TM SA and fabricated by the NITE method. The NITE-SiC/SiC composite bars and reference monolithic SiC bars fabricated by CVI and NITE were irradiated at up to 1.0 dpa and 600-1000 deg. C at JMTR, Japan. Mechanical properties of non-irradiated and irradiated NITESiC/ SiC composites bars were evaluated by tensile tests. Monolithic SiC bars were evaluated by flexural tests. The fracture surface was examined by SEM. Ultimate

  10. Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures

    Gaiduk, Peter; Hansen, John Lundsgaard; Nylandsted Larsen, Arne

    2014-01-01

    Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects.......Graphical abstract Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects....

  11. Avaliação nutricional do milho com maior teor de óleo, nas formas de grãos secos e silagens, para suínos nas fases de crescimento e terminação Nutritional evaluation of dry grain and silage of higher oil corn on growing - finishing pigs feeding

    Marcos Augusto Alves da Silva

    2006-06-01

    Full Text Available Dois experimentos foram conduzidos para determinação do valor nutritivo de rações contendo milho com maior teor de óleo, nas formas de grão seco (MSe, silagem de grãos úmidos (SGUM e silagem de milho seco reidratado (SH e avaliação do desempenho de suínos em crescimento e terminação alimentados com essas rações. No ensaio de digestibilidade foram utilizados 12 suínos mestiços, machos castrados, alojados em gaiolas e distribuídos em um delineamento experimental de parcelas subdivididas. Os valores de matéria seca (MSD, proteína (PD, amido (AMD, extrato etéreo (EED, matéria orgânica (MOD e energia digestíveis (ED, bem como de energia metabolizável (EM, na matéria natural, para MSe, SGUM e SH, foram de 83,42; 7,54; 63,90; 4,40; 82,28%; 3.587 e 3.513 kcal/kg; de 60,80; 4,85; 45,01; 3,10; 59,50%; 2.647 e 2.509 kcal/kg; de 66,48; 6,16; 49,04; 3,41; 65,67%; 2.853 e 2.797 kcal/kg, respectivamente. No experimento de desempenho, foram utilizados 32 suínos mestiços, distribuídos em um delineamento inteiramente casualizado, com quatro repetições e dois animais por unidade experimental. Os tratamentos consistiram de uma ração à base de milho e farelo de soja e de outras três, com substituição total do milho seco comum por MSe, SGUM e SH, com base nos valores de energia digestível. Não foram observadas diferenças entre os tratamentos na fase de crescimento. Na fase de terminação, houve aumento no consumo diário de ração e maior ganho diário de peso para a SGUM, em comparação à ração testemunha. Ocorreu redução no custo da ração por quilograma de peso vivo ganho para a SGUM em ambas as fases de crescimento. O MSe, a SGUM e a SH podem substituir totalmente o milho seco comum em rações para suínos nas fases de crescimento e terminação, sem prejudicar o desempenho. As rações contendo SGUM proporcionaram menores custos, em ração, por quilograma de animal produzido.Two experiments were carried out to

  12. Synthesis and characterization of laminated Si/SiC composites

    Naga, Salma M.; Kenawy, Sayed H.; Awaad, Mohamed; Abd El-Wahab, Hamada S.; Greil, Peter; Abadir, Magdi F.

    2012-01-01

    Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results. PMID:25685404

  13. Structure of MnSi on SiC(0001)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  14. Synthesis and characterization of laminated Si/SiC composites

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  15. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-01-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN x /SiN y multilayers with high on/off ratio of 10 9 . High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  16. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

    Jiang, Xiaofan; Ma, Zhongyuan; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan

    2014-09-01

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  17. Study of Si/Si, Si/SiO2, and metal-oxide-semiconductor (MOS) using positrons

    Leung, To Chi.

    1991-01-01

    A variable-energy positron beam is used to study Si/Si, Si/SiO 2 , and metal-oxide-semiconductor (MOS) structures. The capability of depth resolution and the remarkable sensitivity to defects have made the positron annihilation technique a unique tool in detecting open-volume defects in the newly innovated low temperature (300C) molecular-beam-epitaxy (MBE) Si/Si. These two features of the positron beam have further shown its potential role in the study of the Si/SiO 2 . Distinct annihilation characteristics has been observed at the interface and has been studied as a function of the sample growth conditions, annealing (in vacuum), and hydrogen exposure. The MOS structure provides an effective way to study the electrical properties of the Si/SiO 2 interface as a function of applied bias voltage. The annihilation characteristics show a large change as the device condition is changed from accumulation to inversion. The effect of forming gas (FG) anneal is studied using positron annihilation and the result is compared with capacitance-voltage (C-V) measurements. The reduction in the number of interface states is found correlated with the changes in the positron spectra. The present study shows the importance of the positron annihilation technique as a non-contact, non-destructive, and depth-sensitive characterization tool to study the Si-related systems, in particular, the Si/SiO 2 interface which is of crucial importance in semiconductor technology, and fundamental understanding of the defects responsible for degradation of the electrical properties

  18. Positron annihilation at the Si/SiO2 interface

    Leung, T.C.; Weinberg, Z.A.; Asoka-Kumar, P.; Nielsen, B.; Rubloff, G.W.; Lynn, K.G.

    1992-01-01

    Variable-energy positron annihilation depth-profiling has been applied to the study of the Si/SiO 2 interface in Al-gate metal-oxide-semiconductor (MOS) structures. For both n- and p-type silicon under conditions of negative gate bias, the positron annihilation S-factor characteristic of the interface (S int ) is substantially modified. Temperature and annealing behavior, combined with known MOS physics, suggest strongly that S int depends directly on holes at interface states or traps at the Si/SiO 2 interface

  19. Formation of Si/Ge/Si heterostructures with quantum dots

    Zinov'ev, V.A.; Dvurechenskij, A.V.; Novikov, P.L.

    2003-01-01

    It is present the Monte Carlo simulation of epitaxial embedding of faceted three-dimensional Ge islands (quantum dots) in a Si matrix. Under a Si flux these islands expand and undergo a shape change (from pyramidal to drop-like shape). The main expansion occurs at initial stage of embedding in Si (deposition of 1-2 monolayers). This change is controlled by surface diffusion. The shape of island can be preserved when one uses the higher Si fluxes. The reason of island conservation lies in blocking of Ge surface diffusion [ru

  20. 32Si dating of sediments

    Morgenstern, U.

    2006-01-01

    Useful tools for determining absolute ages of sediments deposited within the last c. 100 years include 210 Pb, 137 Cs, and bomb radiocarbon. Cosmogenic 32 Si, with a half life of c. 140 years, can be applied in the age range 30-1000 years and is ideally suited for this time period. Detection of 32 Si is, however, very difficult due to its extremely low natural specific activity, and the vast excess of stable silicon (i.e. low 32 Si/Si ratio). 23 refs

  1. SiC/SiC Cladding Materials Properties Handbook

    Snead, Mary A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Koyanagi, Takaaki [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Singh, Gyanender P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2017-08-01

    When a new class of material is considered for a nuclear core structure, the in-pile performance is usually assessed based on multi-physics modeling in coordination with experiments. This report aims to provide data for the mechanical and physical properties and environmental resistance of silicon carbide (SiC) fiber–reinforced SiC matrix (SiC/SiC) composites for use in modeling for their application as accidenttolerant fuel cladding for light water reactors (LWRs). The properties are specific for tube geometry, although many properties can be predicted from planar specimen data. This report presents various properties, including mechanical properties, thermal properties, chemical stability under normal and offnormal operation conditions, hermeticity, and irradiation resistance. Table S.1 summarizes those properties mainly for nuclear-grade SiC/SiC composites fabricated via chemical vapor infiltration (CVI). While most of the important properties are available, this work found that data for the in-pile hydrothermal corrosion resistance of SiC materials and for thermal properties of tube materials are lacking for evaluation of SiC-based cladding for LWR applications.

  2. Oscillations in the fusion of the Si + Si systems

    Aguilera R, E.F.; Kolata, J.J.; DeYoung, P.A.; Vega, J.J.

    1986-02-01

    Excitation functions for the yields of all the residual nuclei from the 28 Si + 28,30 and 30 Si + 30 Si reactions have been measured via the γ-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the 28 + 28 Si reaction, we have found evidence for intermediate width structure in the 2α and the αpn channels in 28 Si + 30 Si and for broad structure in the total fusion cross sections for 30 Si + 30 Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  3. Joining of SiC ceramics and SiC/SiC composites

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  4. Influência do preparo inicial sobre a estrutura do solo quando da adoção do sistema plantio direto, avaliada por meio da pressão de preconsolidação

    Silva,R. B.; Dias Junior,M. S.; Santos,F. L.; Franz,C. A. B.

    2003-01-01

    Os efeitos do tráfego e do tipo de preparo sobre a estrutura dos solos agrícolas, quando da adoção do sistema plantio direto na região dos Cerrados, têm sido pouco pesquisados. Os estudos desenvolvidos são apenas qualitativos e utilizam-se, geralmente, de propriedades, tais como: a densidade do solo e a resistência do solo à penetração, as quais não possibilitam predizer quanto de pressão o solo pode receber de forma que, em manejos futuros, a compactação possa ser evitada. Este trabalho teve...

  5. Tailoring of SiC nanoprecipitates formed in Si

    Velisa, G., E-mail: gihan.velisa@cea.fr [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Horia Hulubei National Institute for Physics and Nuclear Engineering, P.O. Box MG-6, 077125 Magurele (Romania); Trocellier, P. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Thomé, L. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Vaubaillon, S. [CEA, INSTN, UEPTN, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Miro, S.; Serruys, Y.; Bordas, É. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France); Meslin, E. [CEA, DEN, Service de Recherches de Métallurgie Physique, F-91191 Gif-sur-Yvette (France); Mylonas, S. [Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, UMR8609, Bât. 108, 91405 Orsay (France); Coulon, P.E. [Ecole Polytechnique, Laboratoire des Solides Irradiés, CEA/DSM/IRAMIS-CNRS, 91128 Palaiseau Cedex (France); Leprêtre, F.; Pilz, A.; Beck, L. [CEA, DEN, Service de Recherches de Métallurgie Physique, Laboratoire JANNUS, F-91191 Gif-sur-Yvette (France)

    2013-07-15

    The SiC synthesis through single-beam of C{sup +}, and simultaneous-dual-beam of C{sup +} and Si{sup +} ion implantations into a Si substrate heated at 550 °C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C{sup +} and 890-keV Si{sup +}) and single-beam (520-keV C{sup +}) ion implantations. Their shape appear as spherical (average size ∼4–5 nm) and they are in epitaxial relationship with the silicon matrix.

  6. Substituição do milho por farelo de trigo ou farelo de glúten de milho na ração de bovinos de corte em terminação = Substitution of corn grain by wheat middlings or corn gluten feed in the finishing bulls diet

    Eduardo Menegueli Pereira

    2007-01-01

    Full Text Available O objetivo do trabalho foi avaliar a substituição do milho moído fino (MM por farelo de trigo (FT ou farelo de glúten de milho (FGM na ração de 36 bovinos não castrados, em terminação (14 meses; peso inicial de 382 kg durante 87 dias. A ração continha 24% de silagem de capim e 76% de concentrado, constituído por polpa cítrica, farelo de soja, uréia, minerais, bicarbonato de sódio e monensina sódica, além de uma das fontes energéticas testadas. A substituição de MM por FT aumentou a ingestão de FDN (pThe objective of this work was to evaluate the substitution of finely ground (GC corn by wheat middlings (WM or dried corn gluten feed (CGF in finishing feedlot diets. Thirty-six yearling bulls (382 kg average initial live weight; 14 months old were fed during 87 days. The diets contained 24% grass silage and 76% concentrate, formulated with dried citrus pulp, soybean meal, urea, mineral-vitamin mix,sodium bicarbonate, sodium monensin, and one of the energy sources tested. The substitution of wheat middlings for corn increased NDF intake (p<0.05. However, no effect was observed on other measured parameters. Substitution of corn gluten feed for ground corn reduced dry matter intake (p<0.05 and average daily gain (p<0.10, increasedNDF intake (p<0.05, but had no effect on feed efficiency. These diets showed no differences in the observed values of net energy of maintenance or gain. The ratio observed/expected net energy for the diet differs from the other treatments. For this type of diet, GC may be completely replaced by WM or CGF with no depression on feed efficiency or on diet net energy. NRC (2001 underestimates TDN values and net energy estimates for WM and CGF.

  7. SI units in radiation protection

    Jain, V.K.; Soman, S.D.

    1978-01-01

    International System of Units abbreviated as SI units has been adopted by most of the countries of the world. Following this development, the implementation of SI units has become mandatory with a transition period of about ten years. Some of the journals have already adopted the SI units and any material sent for publication to them must use only these. International Commission on Radiation Units and Measurement (ICRU) published letters in several journals including Physics in Medicine and Biology, Health Physics, British Journal of Radiology, etc. outlining the latest recommendations on SI units to elicit the reactions of scientists in the general field of radiological sciences. Reactions to the letters were numerous as can be seen in the correspondence columns of these journals for the last few years and ranged from great misgivings and apprehension to support and appreciation. SI units have also been the subject of editorial comments in several journals. On the basis of a survey of this literature, it may be said that there was general agreement on the long term advantage of SI units inspite of some practical difficulties in their use particularly in the initial stages. This report presents a review of SI units in radiological sciences with a view to familiarize the users with the new units in terms of the old. A time table for the gradual changeover to the SI units is also outlined. (auth.)

  8. Oscillations in the fusion of the Si + Si systems; Oscilaciones en la fusion de sistemas de Si + Si

    Aguilera R, E F; Kolata, J J; DeYoung, P A; Vega, J J [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico)

    1986-02-15

    Excitation functions for the yields of all the residual nuclei from the {sup 28} Si + {sup 28,30} and {sup 30} Si + {sup 30} Si reactions have been measured via the {gamma}-ray technique for center of mass energies in the region within one and two times the Coulomb barrier.Thirteen elements were identified for the first reaction and ten for the other two. While no structure is shown by the data for the {sup 28} + {sup 28} Si reaction, we have found evidence for intermediate width structure in the 2{alpha} and the {alpha}pn channels in {sup 28} Si + {sup 30} Si and for broad structure in the total fusion cross sections for {sup 30} Si + {sup 30} Si. Calculations using a barrier penetration model with one free parameter reproduce the experimental results quite well. Evaporation model calculations indicate that the individual structure of the nuclei involved in the respective decay chains might have an important influence upon the deexcitation process at the energies relevant to our experiments. (Author)

  9. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  10. Mechanics of patterned helical Si springs on Si substrate.

    Liu, D L; Ye, D X; Khan, F; Tang, F; Lim, B K; Picu, R C; Wang, G C; Lu, T M

    2003-12-01

    The elastic response, including the spring constant, of individual Si helical-shape submicron springs, was measured using a tip-cantilever assembly attached to a conventional atomic force microscope. The isolated, four-turn Si springs were fabricated using oblique angle deposition with substrate rotation, also known as the glancing angle deposition, on a templated Si substrate. The response of the structures was modeled using finite elements, and it was shown that the conventional formulae for the spring constant required modifications before they could be used for the loading scheme used in the present experiment.

  11. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  12. Níveis de energia em suplementos múltiplos para terminação de novilhos em pastagem de capim-braquiária no período de transição águas-seca Energy levels in multiple supplements for finishing beef cattle grazing palisade grass pasture during the rainy to dry transition season

    Maykel Franklin Lima Sales

    2008-04-01

    Full Text Available Estudaram-se os efeitos de níveis de energia em suplementos múltiplos sobre o desempenho produtivo e os parâmetros nutricionais de bovinos em fase de terminação mantidos em pastagem de capim-braquiária (B. brizantha cv. Marandu durante o período de transição águas-seca. Para avaliação do desempenho produtivo, utilizaram-se 24 novilhos mestiços, não-castrados, com 18 meses de idade e peso corporal médio inicial de 330 kg, distribuídos em delineamento inteiramente casualizado, em quatro piquetes de 1,5 ha. Avaliaram-se quatro tratamentos: mistura mineral (MM e suplementos formulados à base de milho e grão de soja em três níveis de fornecimento (1,0; 1,5 e 2,0 kg/dia para permitir consumo de NDT de 0,832; 1,163 e 1,496 kg/dia, respectivamente. Houve efeito linear positivo dos níveis de energia sobre o ganho médio diário e o peso vivo final. Os parâmetros nutricionais foram avaliados em quatro novilhos mestiços não-castrados com peso médio inicial de 300 kg, fistulados no esôfago, rúmen e abomaso, alimentados com dietas semelhantes às dos animais utilizados no experimento de desempenho. Não houve efeito da suplementação sobre o consumo de matéria seca total, mas houve redução linear no consumo de forragem da pastagem (MSP. Os consumos de matéria orgânica proveniente do pasto, de FDN da dieta total e de FDN da pastagem foram afetados linear e negativamente pelos níveis de energia. Não foram encontrados efeitos dos níveis de suplementação sobre a digestibilidade total dos nutrientes, com exceção da PB, que foi influenciada de forma quadrática pelos níveis de suplementação. Ganhos de peso adicionais de 20 a 30% podem ser obtidos com quantidades crescentes de energia na fase de terminação, contudo, esses ganhos dependem da substituição do consumo de forragem pelo suplemento.The effects of energy levels in multiple supplements on productive performance and nutritional parameters were evaluated of

  13. Níveis de uréia em suplementos múltiplos para terminação de novilhos em pastagem de capim-braquiária durante o período de transição águas-seca Urea levels in multiple supplements for finishing beef cattle on palisade grass pasture during the rainy to dry transition

    Maykel Franklin Lima Sales

    2008-09-01

    Full Text Available Avaliaram-se os efeitos de suplementos múltiplos com diferentes níveis de uréia sobre o desempenho produtivo e os parâmetros nutricionais de bovinos em fase de terminação mantidos em pastagem diferida de capim-braquiária (Brachiaria brizantha cv. Marandu no período de transição águas-seca. A disponibilidade estimada de matéria seca das pastagens variou de 16.360 a 9.358 kg/ha. Para avaliação do desempenho produtivo, utilizaram-se 20 novilhos mestiços não-castrados, com 20 meses de idade e 376 kg de peso vivo. Os animais foram agrupados em lotes com pesos semelhantes, segundo um delineamento inteiramente casualizado, em quatro piquetes de 1,5 ha, onde receberam 1,5 kg/dia de suplemento isoprotéico (20% de PB, constituído de grãos de milho e soja moídos, mistura mineral e uréia nos níveis 0,0; 1,6; 3,2 ou 4,8% na matéria natural. O ganho médio diário - valor médio foi de 0,570 kg/dia - não foi influenciado pelos níveis de uréia do suplemento. Os parâmetros nutricionais foram avaliados utilizando-se quatro animais mestiços Holandês × Zebu, não-castrados, com peso médio inicial de 320 kg, fistulados no esôfago, rúmen e abomaso. Os animais receberam as mesmas quantidades de suplemento fornecidas aos animais do experimento de desempenho. Os níveis de uréia não afetaram significativamente o pH e a concentração de amônia ruminal. Para obtenção de ganhos de 0,5 a 0,6 kg/dia, pode-se utilizar apenas milho, uréia e mistura mineral em suplementos múltiplos para terminação de bovinos em pasto diferido.The effects of multiple supplements with different urea levels on the productive performance and nutritional characteristics, for finishing beef cattle kept in deferred pasture of palisade grass (Brachiaria brizantha cv. Marandu in the transition period of rainy to dry season were evaluated. The estimated dry matter availability of the pasture ranged from 16,360 to 9,358 kg/ha. In the performance trial, 20

  14. Effects of different litter depths on environmental parameters and growth performance of growing finishing pigs Efeito de diferentes profundidades de cama usada para suínos em crescimento e em terminação sobre parâmetros ambientais e desempenho de crescimento

    Érico Kunde Corrêa

    2009-06-01

    Full Text Available Deep litter systems represent low cost alternatives to raise growing-finishing pigs, reducing slurry accumulation, although pig's thermal comfort may be negatively affected by the heat produced inside the litter. This study compared environmental and performance parameters for growing-finishing pigs raised on deep litter systems having distinct depths and on solid floor. The experiment was conducted in a region of temperate climate of Brazil, comparing three treatments: litter having rice husk 0.5m (T1; and 0.25m deep (T2; and solid concrete floor (T3. The first litter was used in two lots and replaced by a second litter used in other two lots, during 52 weeks. Each lot included five pigs in a 7m² pen, from 60 to 145 d of age. Environmental parameters were determined at weekly intervals, including: atmospheric temperature; relative humidity; temperature at the center of the pen, in the surface (TSF; and at half of the depth (THD, only for T1 and T2. Feed consumption and weight of pigs were measured every four weeks. Atmospheric temperature and relative humidity were not influenced by the treatments (P>0.05. Mean TSF was 22.8 ± 3.6°C, being lower for T3 (P0.05. TSF was higher for new than for used litters (P0.05. Despite the potential unfavorable thermal comfort under high temperatures, deep litter systems can be used to raise pigs in the growing-finishing phases due to the absence of negative effects for growth performance.O uso de cama representa uma alternativa de baixo custo para a criação de suínos em crescimento e em terminação, promovendo redução do acúmulo de dejetos, embora o conforto térmico dos animais possa ser prejudicado pelo calor produzido no interior da cama. Este estudo compara os parâmetros ambientais e o desempenho de crescimento de suínos em sistemas de criação sobre cama, com profundidades distintas, e sobre piso concreto. O experimento foi realizado em uma região de clima temperado na região Sul do Brasil

  15. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  16. Low-temperature magnetotransport in Si/SiGe heterostructures on 300 mm Si wafers

    Scappucci, Giordano; Yeoh, L.; Sabbagh, D.; Sammak, A.; Boter, J.; Droulers, G.; Kalhor, N.; Brousse, D.; Veldhorst, M.; Vandersypen, L. M. K.; Thomas, N.; Roberts, J.; Pillarisetty, R.; Amin, P.; George, H. C.; Singh, K. J.; Clarke, J. S.

    Undoped Si/SiGe heterostructures are a promising material stack for the development of spin qubits in silicon. To deploy a qubit into high volume manufacturing in a quantum computer requires stringent control over substrate uniformity and quality. Electron mobility and valley splitting are two key electrical metrics of substrate quality relevant for qubits. Here we present low-temperature magnetotransport measurements of strained Si quantum wells with mobilities in excess of 100000 cm2/Vs fabricated on 300 mm wafers within the framework of advanced semiconductor manufacturing. These results are benchmarked against the results obtained in Si quantum wells deposited on 100 mm Si wafers in an academic research environment. To ensure rapid progress in quantum wells quality we have implemented fast feedback loops from materials growth, to heterostructure FET fabrication, and low temperature characterisation. On this topic we will present recent progress in developing a cryogenic platform for high-throughput magnetotransport measurements.

  17. Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers

    Thi, Trinh Cham; Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki

    2015-01-01

    We investigate the role of hydrogen content and fixed charges of catalytic chemical vapor deposited (Cat-CVD) SiN x /Si-rich SiN x stacked layers on the quality of crystalline silicon (c-Si) surface passivation. Calculated density of fixed charges is on the order of 10 12 cm −2 , which is high enough for effective field effect passivation. Hydrogen content in the films is also found to contribute significantly to improvement in passivation quality of the stacked layers. Furthermore, Si-rich SiN x films deposited with H 2 dilution show better passivation quality of SiN x /Si-rich SiN x stacked layers than those prepared without H 2 dilution. Effective minority carrier lifetime (τ eff ) in c-Si passivated by SiN x /Si-rich SiN x stacked layers is as high as 5.1 ms when H 2 is added during Si-rich SiN x deposition, which is much higher than the case of using Si-rich SiN x films prepared without H 2 dilution showing τ eff of 3.3 ms. - Highlights: • Passivation mechanism of Si-rich SiN x /SiN x stacked layers is investigated. • H atoms play important role in passivation quality of the stacked layer. • Addition of H 2 gas during Si-rich SiN x film deposition greatly enhances effective minority carrier lifetime (τ eff ). • For a Si-rich SiN x film with refractive index of 2.92, τ eff improves from 3.3 to 5.1 ms by H 2 addition

  18. Low dose irradiation performance of SiC interphase SiC/SiC composites

    Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

    1998-01-01

    Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

  19. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO{sub 2}/Si and SiO{sub 2}/SiC structures

    Kobayashi, H., E-mail: koba771@ybb.ne.jp [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha [Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2010-07-15

    We have developed low temperature formation methods of SiO{sub 2}/Si and SiO{sub 2}/SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO{sub 3} aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO{sub 2} layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO{sub 2} gap-state density, and (iii) high band discontinuity energy at the SiO{sub 2}/Si interface arising from the high atomic density of the NAOS SiO{sub 2} layer. For the formation of a relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in {approx}40 wt% HNO{sub 3} and azeotropic HNO{sub 3} aqueous solutions, respectively. In this case, the SiO{sub 2} formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO{sub 2} layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO{sub 2} layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO{sub 2} layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., {>=}10 nm) SiO{sub 2} layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method

  20. MANDARIM TRIUNFANTE: até quando?

    Fábio José da Silva Nascimento

    2016-08-01

    Esta es una presentación "panorámica" en China. El carácter global de este enfoque es el encargado de recoger elementos importantes responsables de la aparición de este coloso oriental en el escenario global actual. Por otra parte, este trabajo se evalúa el papel del país como el principal "taller del mundo y analiza los" tentáculos "de Beijing en la periferia, como África y América Latina. Se muestra la precisión del gobierno central chino en la represión de las acciones separatistas tibetanos. Estas acciones violentas promovidas por los rebeldes islámicos en la provincia de Xinjiang. Destaca la tensa relación entre el chino-Politburó y sus vecinos asiáticos, especialmente Japón, India, Corea del Sur y Taiwán, "isla rebelde". Se destaca la contribución de la "mayoría de la historia comunista capitalista" para el mantenimiento de la animosidad que surgen de la "Guerra Fría" todavía en la actualidad de la península coreana. la participación en el debate Mandarín mercados de productos agrícolas y energéticos. Delinea el reciente acercamiento Brasil / China. Palabras clave: China; Escenario de Globalización; Tensiones Regionale; Materias Primas; Brasil.

  1. Quando i romanzi facevano male alla salute

    Stefano Calabrese

    2016-07-01

    Full Text Available Come sostengono neuroscienziati e cognitivisti, attualmente le narrazioni finzionali svolgono un ruolo essenziale nell'aiutare gli individui a elaborare schemi predittivi circa la realtà; inoltre, la fruizione immersiva nelle narrazioni attuali costituisce una palestra in cui i lettori indossano empaticamente le emozioni dei personaggi. Questo accade perché oggi il dinamismo del contesto storico-culturale della globalizzazione ha reso necessaria una maggiore abilità nel mind reading e una profonda competenza nelle metarappresentazioni. Al contrario, nel secolo diciannovesimo le narrazioni producevano nei lettori cattive identificazioni perché il contesto storico-culturale non era per così dire all'altezza delle finzioni narrative. Lo dimostra il caso della ricezione normanna di Madame Bovary. As neuroscience and cognitive psychology assert, nowadays fictional narrative holds an essential role helping individuals elaborating predictive schemes of reality; furthemore, immersive fruition of fiction constitutes a mental training in which readers wear characters’ emotions through empathy. This happens because the dynamic historical and cultural context of globalization requires an always more sophisticated ability in mind reading and a strong competence on meta-representations. On the contrary, during 19th Century narrations produced in readers incomplete identifications, due to a context still historically and culturally backward for narrative fiction, as exemplarily demonstrated by Madame Bovary’s Norman reception.

  2. Quando NÓS Somos os OUTROS

    Paula Fernanda Ludwig

    2016-07-01

    Full Text Available Conceitos, convenções, cultura... Trabalhamos com elementos cuja constituição é marcada por processos complexos. A formação de uma identidade nacional encaixa-se nesse patamar. Ela está vinculada a fatores capazes de fundamentar um sentimento de pertença, prevendo a dicotomia do eu, o nós em oposição ao outro. Assim, estabelece-se um eixo elaborador de sentidos – a alteridade, assunto de várias discussões no campo teórico atual. Nesse jogo, a nação brasileira não é exceção, tanto que o primeiro documento, a Carta de Pero Vaz de Caminha, que relata o nós, Brasil, aponta-nos como o outro de quem constrói esse discurso. Analisar a Carta sob a perspectiva da construção da alteridade coloca-se como foco de interesse deste artigo visto que não há a expectativa de aproximações inconsequentes entre o antigo e o novo, mas sim a percepção de que olhar para trás é um movimento a favor da compreensão do olhar voltado para frente.

  3. QUANDO FOGEM DE MIM NA ESCOLA…

    Cristina Madureira

    2016-07-01

    Full Text Available Introdução: A Displasia Craniofrontonasal (CFND é uma doença rara ligada ao X, caracterizada por malformações cra- niofaciais graves, paradoxalmente associada a fenótipos mais exuberantes no sexo feminino. Caso Clínico: sexo feminino, pais jovens não consanguí- neos e sem antecedentes familiares relevantes, orientada para a consulta de Pediatria por malformações craniofaciais. Apre- sentava craniossinostose coronal com assimetria craniofacial e braquiturricefalia, fronte alta, larga e proeminente, hipertelorismo acentuado, ponta nasal bífida e baixa implantação dos pavilhões auriculares. Evidência de clinodactilia do 5º dedo e háluces lar- gos. O estudo genético identificou uma mutação frameshift no gene EFBN1 no cromossoma X, confirmando o diagnóstico de CFND. O estudo genético dos pais foi normal (mutação de novo. Foi orientada para a consulta de Genética Médica e de Cirurgia Plástica (rinoplastia e várias cirurgias de correção de hipertelorismo. O desenvolvimento psicomotor foi adequado e após ingresso no 1º ciclo verificaram-se dificuldades na adaptação escolar e relação com os pares, com aproveitamento satisfató- rio. A avaliação psicológica revelou baixa autoestima, ansiedade face à exposição social e dificuldade em lidar com a frustração. Atualmente apresenta dismorfias faciais com correção parcial, escoliose ligeira e miopia/astigmatismo, mantendo seguimento multidisciplinar. Comentários: Os autores pretendem alertar para a existência desta síndrome genética, assim como realçar a necessida- de de uma abordagem multidisciplinar destes casos. A par do tratamento cirúrgico, é fundamental o aconselhamento genético e o acompanhamento psicológico destas doentes, pela baixa autoestima e pelo risco de exclusão social associados a esta síndrome.

  4. POTÊNCIA EDULCORANTE, DOÇURA EQUIVALENTE E ACEITAÇÃO DE DIFERENTES EDULCORANTES EM BEBIDA PREPARADA COM ERVA-MATE (Ilex paraguariensis ST. HIL. EM PÓ SOLÚVEL, QUANDO SERVIDA QUENTE

    JULIANA MARIA PORTO CARDOSO

    2009-07-01

    Full Text Available

    A bebida preparada pela infusão da erva-mate torrada, mais conhecida como chá-mate, é amplamente conhecida e consumida por diferentes faixas etárias e sócio-econômicas por todo o Brasil. É habitualmente consumida quente em diferentes regiões, adoçada com sacarose ou adoçante dietético de mesa. Uma vez que a literatura cita que a potência de um edulcorante pode variar em função da temperatura, entre outros fatores, foi objetivo do presente estudo determinar a doçura equivalente e potência edulcorante de diferentes edulcorantes em relação à sacarose em chá-mate em pó solúvel, preparado e servido quente (45±2o C aplicando-se estimação de magnitude, e avaliar a aceitação da bebida quando adoçada com os mesmos edulcorantes na concentração determinada como ideal. Entre os edulcorantes estudados (aspartame, mistura ciclamato/sacarina 2:1, estévia e sucralose, a sucralose apresentou o maior poder edulcorante em chá-mate quente, sendo 679 vezes mais doce que a sacarose em doçura equivalente a 8,15%. As amostras adoçadas com sacarose, sucralose, aspartame e ciclamato/sacarina 2:1 não diferiram entre si na aceitação em relação ao sabor, enquanto a amostra adoçada com estévia obteve aceitação significativamente inferior (p 0,05. PALAVRAS-CHAVE: Infusão de erva- mate; estimação de magnitude; estévia, aspartame, sucralose.

  5. Grafted SiC nanocrystals

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    ), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

  6. Radiation emission from wrinkled SiGe/SiGe nanostructure

    Fedorchenko, Alexander I.; Cheng, H. H.; Sun, G.; Soref, R. A.

    2010-01-01

    Roč. 96, č. 11 (2010), s. 113104-113107 ISSN 0003-6951 Institutional research plan: CEZ:AV0Z20760514 Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.820, year: 2010 http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no

  7. Electrical properties of Si/Si1-xGex/Si inverted modulation doped structures

    Sadeghzadeh, M.A.

    1998-12-01

    This thesis is a report of experimental investigations of growth strategy and electrical properties of Si/Si 1-x Ge x /Si inverted Modulation Doped (MD) structures grown by solid source Molecular Beam Epitaxy (MBE). If the grown Si layer is B-doped at some distance (as spacer) before or after the alloy layer, this remote doping induces the formation of a quasi Two Dimensional Hole Gas (2-DHG) near to the inverted (SiGe on Si) or normal (Si on SiGe) heterointerfaces of the Si/Si 1-x Ge x /Si quantum well, respectively. The latter arrangement is the well known 'normal' MD structure but the former one is the so-called 'inverted' MD structure which is of great interest for Field Effect Transistor (FET) applications. A reproducible growth strategy was employed by the use of a thick (400nm) Si cap for inverted MD structures with Ge composition in the range of 16-23%. Boron segregation and cap surface charges are significant in these inverted structures with small ( 20nm) spacer layers, respectively. It was demonstrated by secondary ion mass spectroscopy (SIMS) that boron segregation, which causes a reduction in the effective spacer dimension, can be suppressed by growth interruption after boron doping. The enhancement in hole sheet density with increasing Si cap layer thickness, is attributed to a reduction in the influence of positive surface charges in these structures. Top-gated devices were fabricated using these structures and the hole sheet density could be varied by applying a voltage to the metal-semiconductor gate, and the maximum Hall mobility of 5550 cm 2 V -1 s -1 with 4.2x10 11 cm -2 was measured (at 1.6K) in these structures. Comparison of measured Hall mobility (at 4.2K) as a function of hole sheet density in normal and inverted MD structures implies that both 2-DHG confined at normal and/or inverted structures are subjected to very similar interface charge, roughness, and alloy scattering potentials. Low temperatures magnetotransport measurements (down to

  8. Investimentos avaliados pelo método da equivalência patrimonial: erro na contabilização de dividendos quando existem lucros não realizados

    Ariovaldo dos Santos

    2005-12-01

    Full Text Available Sempre que há transações comerciais envolvendo a investida e a investidora pode ocorrer a figura do Lucro Não Realizado - LNR. Quando a controlada vende qualquer ativo com lucro para a controladora e essa ainda não o revendeu para terceiros, dizse que, para o grupo econômico, esse lucro ainda não foi realizado. Ocorre que pode acontecer de a controlada distribuir esse lucro e, assim, para a controladora haverá o recebimento antecipado de dividendos. Este estudo aborda as práticas contábeis quando ocorre a distribuição desse lucro e a forma de apresentação desses dividendos antecipados nas demonstrações individuais da controladora e da controlada; aborda, também, possíveis reflexos na elaboração de demonstrações consolidadas. Como se trata de um tema ainda não discutido pela classe contábil, não previsto na legislação brasileira e na literatura técnica, este trabalho tem como objetivo dar uma contribuição ao assunto, buscando respostas para três questões: a primeira está relacionada à adequação ou não da forma atualmente utilizada para a contabilização de dividendos provenientes de lucros que ainda não tenham sido realizados para o grupo econômico. A segunda busca alternativas para a contabilização adequada desses dividendos. A terceira diz respeito à forma de apresentação das demonstrações contábeis quando há pagamento de dividendos oriundos de LNR.Whenever there are commercial transactions involving investees and investors, the figure of unrealized profit may come up. When the subsidiary sells any asset to the controlling company with a profit, and the latter has not sold it yet to a third part, it is said that, for the economic group, this profit has not been realized yet. It may happen that the subsidiary distributes this profit and, thus, the controlling company will receive dividends early. This study deals with accounting practices of financial statements when this profit is distributed, as

  9. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  10. On the line intensity ratios of prominent Si II, Si III, and Si IV multiplets

    Djenize, S.; Sreckovic, A.; Bukvic, S.

    2010-01-01

    Line intensities of singly, doubly and triply ionized silicon (Si II, Si III, and Si IV, respectively) belonging to the prominent higher multiplets, are of interest in laboratory and astrophysical plasma diagnostics. We measured these line intensities in the emission spectra of pulsed helium discharge. The Si II line intensity ratios in the 3s3p 22 D-3s 2 4p 2 P o , 3s 2 3d 2 D-3s 2 4f 2 F o , and 3s 2 4p 2 P o -3s 2 4d 2 D transitions, the Si III line intensity ratios in the 3s3d 3 D-3s4p 3 P o , 3s4p 3 P o -3s4d 3 D, 3s4p 3 P o -3s5s 3 S, 3s4s 3 S-3s4p 3 P o , and 3s4f 3 F o -3s5g 3 G transitions, and the Si IV line intensity ratios in the 4p 2 P o -4d 2 D and 4p 2 P o -5s 2 S transitions were obtained in a helium plasma at an electron temperature of about 17,000 ± 2000 K. Line shapes were recorded using a spectrograph and an ICCD camera as a highly-sensitive detection system. The silicon atoms were evaporated from a Pyrex discharge tube designed for the purpose. They represent impurities in the optically thin helium plasma at the silicon ionic wavelengths investigated. The line intensity ratios obtained were compared with those available in the literature, and with values calculated on the basis of available transition probabilities. The experimental data corresponded well with line intensity ratios calculated using the transition probabilities obtained from a Multi Configuration Hartree-Fock approximation for Si III and Si IV spectra. We recommend corrections of some Si II transition probabilities.

  11. SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

    Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

    2017-05-01

    A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

  12. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates

    Teng, F-Y; Ting, J-M; Sharma, Sahendra P; Liao, Kun-Hou

    2008-01-01

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs

  13. Growth of CNTs on Fe-Si catalyst prepared on Si and Al coated Si substrates.

    Teng, F-Y; Ting, Jyh-Ming; Sharma, Sahendra P; Liao, Kun-Hou

    2008-03-05

    In this paper we report the effect of Al interlayers on the growth characteristics of carbon nanotubes (CNTs) using as-deposited and plasma etched Fe-Si catalyst films as the catalysts. Al interlayers having various thicknesses ranging from 2 to 42 nm were deposited on Si substrates prior to the deposition of Fe-Si catalysts. It was found that the Al interlayer diffuses into the Fe-Si catalyst during the plasma etching prior to the CNT growth, leading to the swelling and amorphization of the catalyst. This allows enhanced carbon diffusion in the catalyst and therefore a faster growth rate of the resulting CNTs. It was also found that use of an Al interlayer having a thickness of ∼3 ± 1 nm is most effective. Due to the effectiveness of this, the normally required catalyst etching is no longer needed for the growth of CNTs.

  14. SI units in engineering and technology

    Qasim, S H

    2016-01-01

    SI Units in Engineering and Technology focuses on the use of the International System of Units-Systeme International d'Unités (SI). The publication first elaborates on the SI, derivation of important engineering units, and derived SI units in science and engineering. Discussions focus on applied mechanics in mechanical engineering, electrical and magnetic units, stress and pressure, work and energy, power and force, and magnitude of SI units. The text then examines SI units conversion tables and engineering data in SI units. Tables include details on the sectional properties of metals in SI units, physical properties of important molded plastics, important physical constants expressed in SI units, and temperature, area, volume, and mass conversion. Tables that show the mathematical constants, standard values expressed in SI units, and Tex count conversion are also presented. The publication is a dependable source of data for researchers interested in the use of the International System of Units-Systeme Inter...

  15. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Wu Yuying; Liu Xiangfa; Jiang Binggang; Huang Chuanzhen

    2009-01-01

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  16. Modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy

    Wu Yuying [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China)], E-mail: wyy532001@163.com; Liu Xiangfa [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Shandong Binzhou Bohai Piston Co., Ltd., Binzhou 256602, Shandong (China); Jiang Binggang [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, Shandong University, Ji' nan 250061 (China); Huang Chuanzhen [School of Mechanical Engineering, Shandong University, Jinan 250061 (China)

    2009-05-27

    Modification effect of Ni-38 wt.%Si on the Al-12 wt.%Si alloy has been studied by differential scanning calorimeter, torsional oscillation viscometer and liquid X-ray diffraction experiments. It is found that there is a modification effect of Ni-38 wt.%Si on Al-12 wt.%Si alloy, i.e. primary Si can precipitate in the microstructure of Al-12 wt.%Si alloy when Ni and Si added in the form of Ni-38 wt.%Si, but not separately. Ni-38 wt.%Si alloy brings 'genetic materials' into the Al-Si melt, which makes the melt to form more ordering structure, promotes the primary Si precipitated. Moreover, the addition of Ni-38 wt.%Si, which decreases the solidification supercooling degree of Al-12 wt.%Si alloy, is identical to the effect of heterogeneous nuclei.

  17. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  18. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Jeon, Bup Ju; Lee, Joong Kee

    2014-01-01

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH 4 /SiH 4 mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH 4 and SiH 4 precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium

  19. Electrochemical characteristics of nc-Si/SiC composite for anode electrode of lithium ion batteries

    Jeon, Bup Ju [Department of Energy Resources, Shinhan University, 233-1, Sangpae-dong, Dongducheon, Gyeonggi-do, 483-777 (Korea, Republic of); Lee, Joong Kee, E-mail: leejk@kist.re.kr [Advanced Energy Materials Processing Laboratory, Center for Energy Convergence Research, Green City Technology Institute, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-03-25

    Graphical abstract: Cycling performances and coulombic efficiencies of the nc-Si/SiC composite anodes at different CH{sub 4}/SiH{sub 4} mole ratios. -- Highlights: • Our work has focused on irreversible discharge capacity and capacity retention of nc-Si/SiC composite particles. • Particles comprised a mixed construction of nc-Si/SiC structure with dual phases. • The SiC phase acted as retarding media, leading to enhanced cycle stability. -- Abstract: nc-Si/SiC composite particles were prepared as an anode material for lithium ion batteries using a plasma jet with DC arc discharge. The composition of the nc-Si/SiC composite particles was controlled by setting the mole ratio of CH{sub 4} and SiH{sub 4} precursor gases. X-ray diffraction, TEM images, and Raman shift analyses revealed that the synthesized nc-Si/SiC composite particles comprised a construction of nano-nocaled structure with crystalline phases of active silicon, highly disordered amorphous carbon of graphite and crystalline phases of β-SiC. In the experimental range examined, the nc-Si/SiC composite particles showed good coulombic efficiency in comparison with particles high Si–Si bonding content due to the interplay of particles with a small proportion of carbon and the buffering effect against volume expansion by structural stabilization, and played a role as retarding media for the rapid electrochemical reactions of the SiC crystal against lithium.

  20. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  1. Si, Ge and SiGe wires for sensor application

    Druzhinin, A.A.; Khoverko, Yu.M.; Ostrovskii, I.P.; Nichkalo, S.I.; Nikolaeva, A.A.; Konopko, L.A.; Stich, I.

    2011-01-01

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  2. Doping effect in Si nanocrystals

    Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

    2018-06-01

    Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

  3. Reaction mechanisms at 4H-SiC/SiO2 interface during wet SiC oxidation

    Akiyama, Toru; Hori, Shinsuke; Nakamura, Kohji; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

    2018-04-01

    The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H2O molecule is stable in SiO2 and hardly reacts with the SiC substrate, while the O atom of H2O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H2O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H2O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

  4. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+

    Kaschieva, S.; Angelov, Ch; Dmitriev, S. N.

    2018-03-01

    The influence was studied of 22-MeV electron irradiation on Si-SiO2 structures implanted with high-fluence Si+ ions. Our earlier works demonstrated that Si redistribution is observed in Si+-ion-implanted Si-SiO2 structures (after MeV electron irradiation) only in the case when ion implantation is carried out with a higher fluence (1016 cm-2). We focused our attention on the interaction of high-dose MeV electron irradiation (6.0×1016 cm-2) with n-Si-SiO2 structures implanted with Si+ ions (fluence 5.4×1016 cm-2 of the same order magnitude). The redistribution of both oxygen and silicon atoms in the implanted Si-SiO2 samples after MeV electron irradiation was studied by Rutherford back-scattering (RBS) spectroscopy in combination with a channeling technique (RBS/C). Our results demonstrated that the redistribution of oxygen and silicon atoms in the implanted samples reaches saturation after these high doses of MeV electron irradiation. The transformation of amorphous SiO2 surface into crystalline Si nanostructures (after MeV electron irradiation) was evidenced by atomic force microscopy (AFM). Silicon nanocrystals are formed on the SiO2 surface after MeV electron irradiation. The shape and number of the Si nanocrystals on the SiO2 surface depend on the MeV electron irradiation, while their size increases with the dose. The mean Si nanocrystals height is 16-20 nm after irradiation with MeV electrons at the dose of 6.0×1016 cm-2.

  6. Thermal shock properties of 2D-SiCf/SiC composites

    Lee, Sang Pill; Lee, Jin Kyung; Son, In Soo; Bae, Dong Su; Kohyama, Akira

    2012-01-01

    This paper dealt with the thermal shock properties of SiC f /SiC composites reinforced with two dimensional SiC fabrics. SiC f /SiC composites were fabricated by a liquid phase sintering process, using a commercial nano-size SiC powder and oxide additive materials. An Al 2 O 3 –Y 2 O 3 –SiO 2 powder mixture was used as a sintering additive for the consolidation of SiC matrix region. In this composite system, Tyranno SA SiC fabrics were also utilized as a reinforcing material. The thermal shock test for SiC f /SiC composites was carried out at the elevated temperature. Both mechanical strength and microstructure of SiC f /SiC composites were investigated by means of optical microscopy, SEM and three point bending test. SiC f /SiC composites represented a dense morphology with a porosity of about 8.2% and a flexural strength of about 160 MPs. The characterization of SiC f /SiC composites was greatly affected by the history of cyclic thermal shock. Especially, SiC f /SiC composites represented a reduction of flexural strength at the thermal shock temperature difference higher than 800 °C.

  7. Eficiência do herbicida oxyfluorfen, quando veiculado ao papel, no controle de algumas espécies daninhas Effect of the herbicide oxyfluorfen using paper as a vehicle on the weed control

    Alexandre J. Bezutte

    1995-01-01

    Full Text Available Com o objetivo de encontrar um método alternativo de aplicação de herbicidas, estudou-se a eficiência do oxyfluorfen aplicado em três doses (0, 480 e 960g/ha sob duas formas (pulverizado e veiculado em folha de papel no controle em pré-emergência de Bidens pilosa, Desmodium tortuosum, Eleusine indica, Sida rhombifolia Amaranthus retroflexus, Acanthospermum hispidum e Digitaria horizontalis. A pulverização do oxyfluorfen foi realizada com o auxílio de um pulverizador, e sua veiculação foi feita através da determinação prévia da capacidade de embebição do papel. Obteve-se a concentração necessária da calda quando o papel atingiu completa embebição e então, escorrido o excesso, foi posto a secar na sombra. O delineamento experimental foi o inteiramente casualizado, com cinco repetições. Foram realizadas avaliações aos 30, 45 e 60 dias após a aplicação (DAA, e os resultados indicaram que os métodos de aplicação utilizados, assim como as doses, apresentaram excelente controle de B. pilosa, D. tortuosum, E. indica S. rhombifolia, D. horizontalis e A. retroflexus até 60 DAA, reduzindo tanto a densidade como o acúmulo de matéria seca. Quanto ao A. hispidum, ambos os métodos e doses não proporcionaram bom controle. Foi observado também que o papel utilizado como veículo do oxyfluorfen proporcionou redução na densidade de B. pilosa, E. indica, D. horizontalis e A. retroflexus e promoveu a germinação de S. rhombifolia e A. hispidum quando da avaliação aos DAA. Estes resultados demonstram a viabilidade de utilização de papel como veículo de aplicação do oxyfluorfen.A greenhouse assay was conducted to evaluate na alternative method for applying oxyfluorfen to control annual weeds. The experiment was in 3 x 2 factorial, in a completely randomized design, with three replications. The factors were: three doses of oxyfluorfen (0, 480 and 960g/ha and two methods to apply the herbicide to the soil surface

  8. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    Kowbel, W.; Tsou, K.T.; Withers, J.C.; Youngblood, G.E.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing

  9. 32Si dating of sediments

    Morgenstern, U.

    2004-01-01

    Brief explanation of the use of 32 Si in the dating of sediments. 32 Si , with a half-life of c.140 years, can be applied in the age range 30-1000 years. An appropriate dating tool for that time range is essential because it includes three very important epochs: the impact of human colonisation and industrialisation during the last 150 years, the Little Ice Age between about 1650 AD and 1850 AD, and the last part of the Medieval Climatic Optimum. 23 refs

  10. SI units in radiation protection

    Herrmann, D.

    1976-10-01

    In the field of radiation protection all hitherto used units for activity, activity concentrations, exposure, absorbed dose, and dose rates have to be replaced by SI units during the next years. For this purpose graphs and conversion tables are given as well as recommendations on unit combinations preferentially to be used. As to the dose equivalent, it is suggested to introduce a new special unit being 100 times greater than the rem, instead of maintaining the rem or using the gray for both absorbed dose and dose equivalent. Measures and time schedule relating to the gradual transition to SI units in measuring techniques, training, and publishing et cetera are explained. (author)

  11. Cavities at the Si projected range by high dose and energy Si ion implantation in Si

    Canino, M.; Regula, G.; Lancin, M.; Xu, M.; Pichaud, B.; Ntzoenzok, E.; Barthe, M.F.

    2009-01-01

    Two series of n-type Si samples α and β are implanted with Si ions at high dose (1 x 10 16 ) and high energies, 0.3 and 1.0 MeV, respectively. Both sort of samples are then implanted with 5 x 10 16 He cm -2 (at 10 or 50 keV) and eventually with B atoms. Some of the samples are annealed at temperatures ranging from 800 to 1000 deg. C to allow the thermal growth of He-cavities, located between sample surface and the projected range (R p ) of Si. After the triple ion implantation, which corresponds to defect engineering, samples were characterized by cross-section transmission electron microscopy (XTEM). Voids (or bubbles) are observed not only at the R p (He) on all annealed samples, but also at the R p (Si) on β samples implanted with He at 50 keV. The samples are also studied by positron annihilation spectroscopy (PAS) and the spectra confirm that as-implanted samples contain di-vacancies and that the annealed ones, even at high temperature have bigger open volumes, which are assumed to be the same voids observed by XTEM. It is demonstrated that a sole Si implantation at high energy and dose is efficient to create cavities which are thermally stable up to 1000 deg. C only in the presence of He.

  12. Analysis of Si/SiGe Heterostructure Solar Cell

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  13. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-01-01

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance–voltage (C–V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3–4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements. (paper)

  14. Pressureless sintering of dense Si3N4 and Si3N4/SiC composites with nitrate additives

    Kim, J.Y.; Iseki, Takayoshi; Yano, Toyohiko

    1996-01-01

    The effect of aluminum and yttrium nitrate additives on the densification of monolithic Si 3 N 4 and a Si 3 N 4 /SiC composite by pressureless sintering was compared with that of oxide additives. The surfaces of Si 3 N 4 particles milled with aluminum and yttrium nitrates, which were added as methanol solutions, were coated with a different layer containing Al and Y from that of Si 3 N 4 particles milled with oxide additives. Monolithic Si 3 N 4 could be sintered to 94% of theoretical density (TD) at 1,500 C with nitrate additives. The sintering temperature was about 100 C lower than the case with oxide additives. After pressureless sintering at 1,750 C for 2 h in N 2 , the bulk density of a Si 3 N 4 /20 wt% SiC composite reached 95% TD with nitrate additives

  15. Si-O-Si bond-angle distribution in vitreous silica from first-principles 29Si NMR analysis

    Mauri, Francesco; Pasquarello, Alfredo; Pfrommer, Bernd G.; Yoon, Young-Gui; Louie, Steven G.

    2000-01-01

    The correlation between 29 Si chemical shifts and Si-O-Si bond angles in SiO 2 is determined within density-functional theory for the full range of angles present in vitreous silica. This relation closely reproduces measured shifts of crystalline polymorphs. The knowledge of the correlation allows us to reliably extract from the experimental NMR spectrum the mean (151 degree sign ) and the standard deviation (11 degree sign ) of the Si-O-Si angular distribution of vitreous silica. In particular, we show that the Mozzi-Warren Si-O-Si angular distribution is not consistent with the NMR data. This analysis illustrates the potential of our approach for structural determinations of silicate glasses. (c) 2000 The American Physical Society

  16. SI units in biomedical dosimetry

    Liden, K.

    1975-01-01

    The International commission on radiation units and measurements (ICRU), during the period from 1953 to 1962 presented its definitions of the quantities absorbed dose, exposure, activity, and dose equivalent and the corresponding special units the rad, the roentgen, the curie, and the rem. At the same time an international practical system of units was developed, Le Systeme International d'Unites (SI). It was adopted by the 11th Conference Generale des Poids et Mesures (CGPM) in 1960 and is now officially introduced in almost all countries. The general implementation of the SI means difficulties for the future use of the special radiation units, because the numerical factors involved prevent their adoption as SI units. In view of this, and after having sampled the opinion in the radiological field, the ICRU prepared a Statement on Units in July, 1974 which was forwarded to the Comite International des Poids et Mesures (CIPM) and its Comite Consultatif des Unites (CCU) for consideration. As a result of this statement the CIPM has now proposed, that the 15rh CGPM adopt special names for two SI units, namely the becquerel, symbol Bq, for the unit of activity of radionuclides equal to the reciprocal second, s 1- , and the gray, symbol Gy, for the unit of absorbed dose equal to the joule per kilogram, J/kg. The 15th CGPM will consider this matter in May, 1975. (author)

  17. Palladium transport in SiC

    Olivier, E.J.; Neethling, J.H.

    2012-01-01

    Highlights: ► We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. ► The high temperature mobility of palladium silicides within polycrystalline SiC was studied. ► Corrosion of SiC by Pd was seen in all cases. ► The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. ► The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd 2 Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  18. Palladium transport in SiC

    Olivier, E.J., E-mail: jolivier@nmmu.ac.za [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Centre for High Resolution Transmission Electron Microscopy, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer We investigate the reaction of Pd with SiC at typical HTGR operating temperatures. Black-Right-Pointing-Pointer The high temperature mobility of palladium silicides within polycrystalline SiC was studied. Black-Right-Pointing-Pointer Corrosion of SiC by Pd was seen in all cases. Black-Right-Pointing-Pointer The preferential corrosion and penetration of Pd along grain boundaries in SiC was found. Black-Right-Pointing-Pointer The penetration and transport of palladium silicides in SiC along grain boundaries was found. - Abstract: This paper reports on a transmission electron microscopy (TEM) and scanning electron microscopy (SEM) study of Pd corroded SiC. The reaction of Pd with different types of SiC at typical HTGR operating temperatures was examined. In addition the high temperature mobility of palladium silicides within polycrystalline SiC was investigated. The results indicated corrosion of the SiC by Pd in all cases studied. The corrosion leads to the formation of palladium silicides within the SiC, with the predominant phase found being Pd{sub 2}Si. Evidence for the preferential corrosion and penetration of Pd along grain boundaries in polycrystalline SiC was found. The penetration and transport, without significant corrosion, of palladium silicides into polycrystalline SiC along grain boundaries was also observed. Implications of the findings with reference to the use of Tri Isotropic particles in HTGRs will be discussed.

  19. Advanced Optoelectronic Devices based on Si Quantum Dots/Si Nanowires Hetero-structures

    Xu, J; Zhai, Y Y; Cao, Y Q; Chen, K J

    2017-01-01

    Si quantum dots are currently extensively studied since they can be used to develop many kinds of optoelectronic devices. In this report, we review the fabrication of Si quantum dots (Si QD) /Si nanowires (Si NWs) hetero-structures by deposition of Si QDs/SiO 2 or Si QDs/SiC multilayers on Si NWs arrays. The electroluminescence and photovoltaic devices based on the formed hetero-structures have been prepared and the improved performance is confirmed. It is also found that the surface recombination via the surface defects states on the Si NWs, especially the ones obtained by the long-time etching, may deteriorate the device properties though they exhibit the better anti-reflection characteristics. The possible surface passivation approaches are briefly discussed. (paper)

  20. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  1. Nanocatalytic growth of Si nanowires from Ni silicate coated SiC nanoparticles on Si solar cell.

    Parida, Bhaskar; Choi, Jaeho; Ji, Hyung Yong; Park, Seungil; Lim, Gyoungho; Kim, Keunjoo

    2013-09-01

    We investigated the nanocatalytic growth of Si nanowires on the microtextured surface of crystalline Si solar cell. 3C-SiC nanoparticles have been used as the base for formation of Ni silicate layer in a catalytic reaction with the Si melt under H2 atmosphere at an annealing temperature of 1100 degrees C. The 10-nm thick Ni film was deposited after the SiC nanoparticles were coated on the microtextured surface of the Si solar cell by electron-beam evaporation. SiC nanoparticles form a eutectic alloy surface of Ni silicate and provide the base for Si supersaturation as well as the Ni-Si alloy layer on Si substrate surface. This bottom reaction mode for the solid-liquid-solid growth mechanism using a SiC nanoparticle base provides more stable growth of nanowires than the top reaction mode growth mechanism in the absence of SiC nanoparticles. Thermally excited Ni nanoparticle forms the eutectic alloy and provides collectively excited electrons at the alloy surface, which reduces the activation energy of the nanocatalytic reaction for formation of nanowires.

  2. Research on a Micro-Nano Si/SiGe/Si Double Heterojunction Electro-Optic Modulation Structure

    Song Feng

    2018-01-01

    Full Text Available The electro-optic modulator is a very important device in silicon photonics, which is responsible for the conversion of optical signals and electrical signals. For the electro-optic modulator, the carrier density of waveguide region is one of the key parameters. The traditional method of increasing carrier density is to increase the external modulation voltage, but this way will increase the modulation loss and also is not conducive to photonics integration. This paper presents a micro-nano Si/SiGe/Si double heterojunction electro-optic modulation structure. Based on the band theory of single heterojunction, the barrier heights are quantitatively calculated, and the carrier concentrations of heterojunction barrier are analyzed. The band and carrier injection characteristics of the double heterostructure structure are simulated, respectively, and the correctness of the theoretical analysis is demonstrated. The micro-nano Si/SiGe/Si double heterojunction electro-optic modulation is designed and tested, and comparison of testing results between the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation and the micro-nano Silicon-On-Insulator (SOI micro-ring electro-optic modulation, Free Spectrum Range, 3 dB Bandwidth, Q value, extinction ratio, and other parameters of the micro-nano Si/SiGe/Si double heterojunction micro-ring electro-optic modulation are better than others, and the modulation voltage and the modulation loss are lower.

  3. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  4. Entrance channel excitations in the 28Si + 28Si reaction

    Decowski, P.; Gierlik, E.; Box, P.F.; Kamermans, R.; Nieuwenhuizen, G.J. van; Meijer, R.J.; Griffioen, K.A.; Wilschut, H.W.; Giorni, A.; Morand, C.; Demeyer, A.; Guinet, D.

    1991-01-01

    Velocity spectra of heavy ions produced in the 28 Si + 28 Si reaction at bombarding energies of 19.7 and 30 MeV/nucleon were measured and interpreted within the Q-optimum model extended by the inclusion of particle evaporation from excited fragments. Regions of forward angle spectra corresponding to the mutual excitation of the reaction partners with net mass transfer zero projected onto the Q-value variable show an enhancement at Q-values of -60 - -80 MeV (excitation energies of the reaction partners equal to 30 - 40 MeV). This energy range coincides with the region of 2ℎω - 3ℎω excitations characteristic for giant osciallations. This selective excitation, which occurs at a very early stage of the reaction (the cross section is the largest at very forward angles), provides an important doorway to other dissipative processes

  5. Terminação de novilhos de corte Angus e mestiços em pastagem natural na região da Campanha do RS Finishing of Angus and crossbred beef cattle on native pasture in the Campanha region of RS

    Eduardo Tonet Ferreira

    2011-09-01

    Full Text Available Avaliou-se a viabilidade de abater animais de distintos grupos raciais com até quatro dentes em diferentes tipos de pastagem: natural, adubada, e melhorada por fertilização e sobressemeadura de espécies hiberno-primaveris. O delineamento experimental utilizado foi o de blocos ao acaso, com três repetições. Os dados foram agrupados em estações do ano (inverno e primavera e submetidos à análise de variância. Foram utilizados novilhos de corte Angus e mestiços, ambos com média de idade inicial de 20 meses. A massa de forragem total e a altura do pasto apresentaram diferenças entre os tipos de pastagem e as estações do ano. A taxa de lotação e a massa de forragem verde sofreram interação entre o tipo de pastagem e a estação do ano. O ganho por área ao longo do experimento foi maior na pastagem adubada (259 kg/ha e melhorada (263 kg/ha em comparação à pastagem natural (126 kg/ha. O ganho médio diário foi maior para os novilhos Angus (1,087 kg/dia e na estação de inverno (1,251 kg/dia. Não houve diferença para a área de olho-de-lombo entre o tipo de pastagem e grupo racial na data do abate. A espessura de gordura subcutânea sofreu interação entre o tipo de manejo e o grupo racial, uma vez que novilhos mestiços depositaram mais gordura na pastagem adubada e novilhos Angus na melhorada. Animais mestiços atingiram menor peso ao abate (505 kg, porém maior rendimento de carcaça (51,6%. Somente os animais mantidos na pastagem natural não atingiram acabamento suficiente para a comercialização. A utilização de fertlizantes e sementes na pastagem natural possibilita o abate de novilhos precoces independente do grupo racial. O ambiente pastoril determina diferentes respostas produtivas conforme a genética utilizada. O cruzamento é uma alternativa para incrementar atributos importantes da carcaça e diminuir o tempo de terminação.The viability for slaughtering steers of distinct breeds with four teeth at most, on

  6. Formas de utilização do milho em suplementos para novilhos na fase de terminação em pastagem no período das águas: desempenho e parâmetros nutricionais Corn, in different forms, in multiple supplements for finishing crossbred steers on pasture during rainy season: performance and nutrition parameters

    Marlos Oliveira Porto

    2008-12-01

    Full Text Available Avaliou-se a influência da forma de utilização do milho em suplementos no desempenho de novilhos na fase de terminação, durante o período das águas, em pastagem de capim-braquiária. Utilizaram-se 16 bovinos mestiços com peso inicial de 384 kg e 18 meses de idade, distribuídos em delineamento inteiramente casualizado, com quatro tratamentos mistura mineral (MM (controle; milho triturado (MT; milho desintegrado com sabugo (MDS; e milho desintegrado com palha e sabugo (MDPS - e quatro repetições. Os animais foram mantidos em pastagem de 6 ha de Brachiaria decumbens Stapf, dividida em quatro piquetes de 1,5 ha, com disponibilidade de matéria seca total (MST de 4,77 t/ha e MSpd (matéria seca potencialmente digestível de 3,14 t/ha. Para avaliação dos parâmetros nutricionais, utilizaram-se quatro animais mestiços fistulados no esôfago, no rúmen e no abomaso, com peso médio inicial de 390 kg, distribuídos em quadrado latino 4 × 4, composto de quatro tratamentos e quatro períodos experimentais. Os animais do grupo controle receberam mistura mineral diariamente (60 g/dia, enquanto os demais receberam os suplementos (1,0 kg/dia. Os suplementos múltiplos não influenciaram o desempenho dos animais, mas as concentrações séricas de uréia foram maiores nos animais sob suplementação. O consumo de PB, assim como a digestibilidade total de PB, aumentou com o uso dos suplementos múltiplos. Os animais do grupo controle (mistura mineral apresentaram maior consumo de matéria seca e matéria orgânica de pasto. O uso de suplemento múltiplo (1 kg/dia no período das águas promoveu aumento numérico de até 165 g/animal em relação à suplementação com mistura mineral. O milho desintegrado com palha e sabugo e o milho desintegrado com sabugo equivalem ao grão de milho triturado.The effect of corn feeding forms in multiple supplements on performance of finishing steers grazing signal grass (Brachiaria decumbens Stapf during rainy

  7. Estudo do comportamento do aço API 5L X80 quando submetido à soldagem por processo automatizado Study on the behavior of API 5L X80 steel when subjected to automated welding process

    Siderley Fernandes Albuquerque

    2012-06-01

    Full Text Available No Brasil, a soldagem de tubulações tem sido praticamente de forma manual, entretanto, a utilização de processos de soldagem automatizados têm crescido muito nos últimos anos, contribuindo para o maior controle dos parâmetros de soldagem, e conseqüentemente, a possibilidade de obtenção de juntas soldadas com melhores propriedades mecânicas. A soldagem de tubulações com aço API 5L X80 ainda vem sendo avaliada no Brasil no que diz respeito aos melhores procedimentos, parâmetros e processos de soldagem; a aplicação de processos automatizados nas condições específicas de campo constitui em uma opção ainda incipiente no país por se discutir ainda a relação custo/benefício com a sua implantação. Logo, o objetivo deste trabalho é avaliar o comportamento na ZTA de juntas soldadas do aço API 5L X80 utilizados para transporte de petróleo e gás quando submetidos à soldagem com diferentes parâmetros, procedimentos e processos de soldagem, incluindo o processo automatizado; os resultados indicam além da redução da extensão e do tamanho de grão da ZTA a preservação da estrutura bainítica do metal de base nesta região nas soldagem executadas com processos automatizados.The welding of pipes has been largely manual in Brazil, however, the use of automated welding processes have greatly increased in recent years, contributing to greater control of welding parameters, and consequently, the possibility of obtaining welded joints with better mechanical properties. The welding of pipes of API 5L X80 steel has been evaluated in Brazil considering to best practices, parameters and welding processes; the implementation of automated processes in the specific field conditions is relevant project and innovative design in this area. Therefore, the objective is to evaluate the behavior in the HAZ of the API 5L X80 steel used for transporting oil and gas when subjected to automated welding processes; the results indicated besides the

  8. Treating refractory obsessive-compulsive disorder: what to do when conventional treatment fails? Tratando o transtorno obsessivo-compulsivo refratário: o que fazer quando tratamentos convencionais falham?

    Adelar Pedro Franz

    2013-01-01

    Full Text Available Obsessive-compulsive disorder (OCD is a chronic and impairing condition. A very small percentage of patients become asymptomatic after treatment. The purpose of this paper was to review the alternative therapies available for OCD when conventional treatment fails. Data were extracted from controlled clinical studies (evidence-based medicine published on the MEDLINE and Science Citation Index/Web of Science databases between 1975 and 2012. Findings are discussed and suggest that clinicians dealing with refractory OCD patients should: 1 review intrinsic phenomenological aspects of OCD, which could lead to different interpretations and treatment choices; 2 review extrinsic phenomenological aspects of OCD, especially family accommodation, which may be a risk factor for non-response; 3 consider non-conventional pharmacological approaches; 4 consider non-conventional psychotherapeutic approaches; and 5 consider neurobiological approaches.O transtorno obsessivo-compulsivo (TOC é uma doença crônica e incapacitante. Uma pequena porcentagem de pacientes se torna assintomática após o tratamento. O objetivo deste trabalho foi revisar as alternativas terapêuticas para o tratamento de TOC quando os tratamentos convencionais falham. Os dados foram extraídos de estudos clínicos controlados (medicina baseada em evidências publicados nas bases de dados MEDLINE e Science Citation Index/Web of Science entre 1975 e de 2012. Os resultados são discutidos e sugerem as seguintes abordagens para profissionais que lidam com TOC refratário: 1 rever aspectos fenomenológicos intrínsecos ao TOC, o que pode levar a entendimentos diferenciados e à escolhas terapêuticas distintas; 2 rever aspectos fenomenológicos extrínsecos ao TOC, principalmente acomodação familiar, que pode ser fator de risco para a não resposta; 3 considerar abordagens farmacológicas não convencionais; 4 considerar abordagens psicoterapêuticas não convencionais; e 5 considerar

  9. Quando um primitivo é como um orbe? Quando um primitivo é como um orbe?

    J. Hillis Miller

    2008-04-01

    Full Text Available Minhas estratégias de analise textual se tornarão mais ou menos evidentes na leitura que se segue. Sua proveniência deveriam tornar-se & cia. 0 ensaio foi inicialmente pensado come parte do livro The Linguistic Moment (Princeton: Princeton University Press, 1985. Aqui, como no livro, minha preocupação maior e com aqueles momentos em poemas em que a poesia como meio de comunicação constitui problema. Interessa-me particularmente a forma pela qual as fronteiras entre a linguagem conceitual e a figurative se tornam pouco visiveis no poema "A Primitive like an Orb", da última fase da poesia de Wallace Stevens.

  10. Quando a ficção se recorda, quando o sentido passa a resistir

    Michel Riaudel

    2009-01-01

    Full Text Available A partir de três narrativas da literatura brasileira contemporânea, este ensaio examina como a ficção memorialística se desdobra em função do grau e do tipo de fragmentação narratológica: Relato de um certo oriente, de Milton Hatoum, trabalha com as reverberações da difração cultural; Resumo de Ana, de Modesto Carone, com as divergências do contraponto; O motor da luz, de José Almino, com uma subjetividade despedaçada e polifônica. Da mesma forma, o uso da referência literária discrimina nessas obras três posturas diante do conceito de literatura.From three narratives of the contemporary brazilian literature, this essay investigate how the memorialistic fiction diversifies itself according to the level and the kind of narratological fragmentation: Relato de um certo oriente by Milton Hatoum operates with the reverberations of the cultural diffraction; Resumo de Ana by Modesto Carone with the divergences of the counterpoint; O motor da luz by José Almino with some exploded and polyphonic subjectivity. In the same way, the use of the literary reference discriminates in these three works three positions relating to the concept of literature.

  11. Microwave joining of SiC

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  12. Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics

    Yamaguchi, Yuichiro; Shouji, Masatsugu; Suda, Yoshiyuki

    2012-11-01

    We have investigated the dependence of the oxide layer structure of our previously proposed metal/SiO2/SiOx/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) resistive memory device on the memory operation characteristics. The current-voltage (I-V) measurement and X-ray photoemission spectroscopy results suggest that SiOx defect states mainly caused by the oxidation of 3C-SiC at temperatures below 1000 °C are related to the hysteresis memory behavior in the I-V curve. By restricting the SiOx interface region, the number of switching cycles and the on/off current ratio are more enhanced. Compared with a memory device formed by one-step or two-step oxidation of 3C-SiC, a memory device formed by one-step oxidation of Si/3C-SiC exhibits a more restrictive SiOx interface with a more definitive SiO2 layer and higher memory performances for both the endurance switching cycle and on/off current ratio.

  13. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  14. Laser-controlled stress of Si nanocrystals in a free-standing Si/SiO2 superlattice

    Khriachtchev, Leonid; Raesaenen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar + laser radiation melts Si nanocrystals in a free-standing Si/SiO 2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3 GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means

  15. Gas leak tightness of SiC/SiC composites at elevated temperature

    Hayasaka, Daisuke, E-mail: hayasaka@oasis.muroran-it.ac.jp [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Park, Joon-Soo. [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Graduate School of Engineering, Muroran Institute of Technology, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE-SiC/SiC has extremely densified microstructure compared with other SiC/SiC composite like CVI. • Excellent helium and hydrogen gas-leak tightness of SiC/SiC composites by DEMO-NITE method from prototype industrialization production line was presented. • The excellence against stainless steel and Zircaloy at elevated temperature, together with generic excellent properties of SiC will be inevitable for innovative blanket and divertors for DEMO- and power- fusion reactors. - Abstract: SiC/SiC composite materials are attractive candidates for high heat flux components and blanket of fusion reactor, mainly due to their high temperature properties, radiation damage tolerance and low induced radioactivity. One of the challenges for SiC/SiC application in fusion reactors is to satisfy sufficient gas leak tightness of hydrogen and helium isotopes. Although many efforts have been carried-out, SiC/SiC composites by conventional processes have not been successful to satisfy the requirements, except SiC/SiC composites by NITE-methods. Toward the early realization of SiC/SiC components into fusion reactor systems process development of NITE-process has been continued. Followed to the brief introduction of recently developed DEMO-NITE process, baseline properties and hydrogen and helium gas leak tightness is presented. SiC/SiC claddings with 10 mm in diameter and 1 mm in wall thickness are tested by gas leak tightness system developed. The leak tightness measurements are done room temperature to 400 °C. Excellent gas leak tightness equivalent or superior to Zircaloy claddings for light water fission reactors is confirmed. The excellent gas leak tightness suggests nearly perfect suppression of large gas leak path in DEMO-NITE SiC/SiC.

  16. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  17. Irradiation project of SiC/SiC fuel pin 'INSPIRE': Status and future plan

    Kohyama, Akira; Kishimoto, Hirotatsu

    2015-01-01

    After the March 11 Disaster in East-Japan, Research and Development towards Ensuring Nuclear Safety Enhancement for LWR becomes a top priority R and D in nuclear energy policy of Japan. The role of high temperature non-metallic materials, such as SiC/SiC, is becoming important for the advanced nuclear reactor systems. SiC fibre reinforced SiC composite has been recognised to be the most attractive option for the future, now, METI fund based project, INSPIRE, has been launched as 5-year termed project at OASIS in Muroran Institute of Technology aiming at early realisation of this system. INSPIRE is the irradiation project of SiC/SiC fuel pins aiming to accumulate material, thermal, irradiation effect data of NITE-SiC/SiC in BWR environment. Nuclear fuel inserted SiC/SiC fuel pins are planned to be installed in the Halden reactor. The project includes preparing the NITE-SiC/SiC tubes, joining of end caps, preparation of rigs to control the irradiation environment to BWR condition and the instruments to measure the condition of rigs and pins in operation. Also, basic neutron irradiation data will be accumulated by SiC/SiC coupon samples currently under irradiation in BR2. The output from this project may present the potentiality of NITE-SiC/SiC fuel cladding with the first stage fuel-cladding interaction. (authors)

  18. Growth of CoSi2 on Si(001) by reactive deposition epitaxy

    Lim, C.W.; Shin, C.-S.; Gall, D.; Zuo, J.M.; Petrov, I.; Greene, J.E.

    2005-01-01

    CaF 2 -structure CoSi 2 layers were formed on Si(001) by reactive deposition epitaxy (RDE) and compared with CoSi 2 layers obtained by conventional solid phase growth (SPG). In both sets of experiments, Co was deposited by ultrahigh-vacuum magnetron sputtering and CoSi 2 formed at 600 deg. C. However, in the case of RDE, CoSi 2 formation occurred during Co deposition while for SPG, Co was deposited at 25 deg. C and silicidation took place during subsequent annealing. X-ray diffraction pole figures and transmission electron microscopy results demonstrate that RDE CoSi 2 layers are epitaxial with a cube-on-cube relationship (001) CoSi 2 parallel (001) Si and [100] CoSi 2 parallel[100] Si . In contrast, SPG films are polycrystalline with an average grain size of ≅1000 A and a mixed 111/002/022/112 orientation. We attribute the striking difference to rapid Co diffusion into the Si(001) substrate during RDE for which the high Co/Si reactivity gives rise to a flux-limited reaction resulting in the direct formation of the disilicide phase. In contrast, sequential nucleation and transformation among increasingly Si-rich phases--from orthorhombic Co 2 Si to cubic CoSi to CoSi 2 --during SPG results in polycrystalline layers with a complex texture

  19. High resolution investigation of the 30Si(þ, þ)30Si reaction

    Walinga, J.; Rinsvelt, H.A. van; Endt, P.M.

    The differential cross section for elastic scattering of protons on 30Si was measured with surface barrier counters at four angles. Thirty-six 30Si(þ, γ)31P resonances are known in the Ep=1–2MeV region. Fifteen of these were also observed in the 30Si(þ, þ)30Si reaction, with natural widths varying

  20. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  1. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  2. Formation of AlFeSi phase in AlSi12 alloy with Ce addition

    S. Kores

    2012-04-01

    Full Text Available The influence of cerium addition on the solidification sequence and microstructure constituents of the Al-Si alloys with 12,6 mass % Si was examined. The solidification was analyzed by a simple thermal analysis. The microstructures were examined with conventional light and scanning electron microscopy. Ternary AlSiCe phase was formed in the Al-Si alloys with added cerium during the solidification process. AlSiCe and β-AlFeSi phases solidified together in the region that solidified the last. Cerium addition influenced on the morphology of the α-AlFeSi phase solidification.

  3. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  4. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Ping Wang, Y.; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O.; Stodolna, J.; Ponchet, A.; Bahri, M.; Largeau, L.; Patriarche, G.; Magen, C.

    2015-01-01

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth

  5. Si quantum dot structures and their applications

    Shcherbyna, L.; Torchynska, T.

    2013-06-01

    This paper presents briefly the history of emission study in Si quantum dots (QDs) in the last two decades. Stable light emission of Si QDs and NCs was observed in the spectral ranges: blue, green, orange, red and infrared. These PL bands were attributed to the exciton recombination in Si QDs, to the carrier recombination through defects inside of Si NCs or via oxide related defects at the Si/SiOx interface. The analysis of recombination transitions and the different ways of the emission stimulation in Si QD structures, related to the element variation for the passivation of surface dangling bonds, as well as the plasmon induced emission and rare earth impurity activation, have been presented. The different applications of Si QD structures in quantum electronics, such as: Si QD light emitting diodes, Si QD single union and tandem solar cells, Si QD memory structures, Si QD based one electron devices and double QD structures for spintronics, have been discussed as well. Note the significant worldwide interest directed toward the silicon-based light emission for integrated optoelectronics is related to the complementary metal-oxide semiconductor compatibility and the possibility to be monolithically integrated with very large scale integrated (VLSI) circuits. The different features of poly-, micro- and nanocrystalline silicon for solar cells, that is a mixture of both amorphous and crystalline phases, such as the silicon NCs or QDs embedded in a α-Si:H matrix, as well as the thin film 2-cell or 3-cell tandem solar cells based on Si QD structures have been discussed as well. Silicon NC based structures for non-volatile memory purposes, the recent studies of Si QD base single electron devices and the single electron occupation of QDs as an important component to the measurement and manipulation of spins in quantum information processing have been analyzed as well.

  6. Ion beam processes in Si

    Holland, O.W.; Narayan, J.; Fathy, D.

    1984-07-01

    Observation of the effects of implants of energetic ions at high dose rates into Si have produced some exciting and interesting results. The mechanism whereby displacement damage produced by ions self-anneals during high dose rate implantation is discussed. It is shown that ion beam annealing (IBA) offers in certain situations unique possibilities for damage annealing. Annealing results of the near surface in Si with a buried oxide layer, formed by high dose implantation, are presented in order to illustrate the advantages offered by IBA. It is also shown that ion irradiation can stimulate the epitaxial recrystallization of amorphous overlayers in Si. The nonequilibrium alloying which results from such epitaxial processes is discussed as well as mechanisms which limit the solid solubility during irradiation. Finally, a dose rate dependency for the production of stable damage by ion irradiation at a constant fluence has been observed. For low fluence implants, the amount of damage is substantially greater in the case of high flux rather than low flux implantation

  7. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    Dobrovolskiy, S.; Yakshin, Andrey; Tichelaar, F.D.; Verhoeven, J.; Louis, Eric; Bijkerk, Frederik

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10–20 nm were produced by sequential deposition of Si and implantation of 1 keV View the MathML source ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5–1 nm, buried SiC layer being

  8. Stability analysis of SiO2/SiC multilayer coatings

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  9. (113) Facets of Si-Ge/Si Islands; Atomic Scale Simulation

    Kassem, Hassan

    We have studied, by computer simulation, some static and vibrationnal proprieties of SiGe/Si islands. We have used a Valence Force Field combined to Monte Carlo technique to study the growth of Ge and SiGe on (001)Si substrates. We have focalised on the case of large pyramidal islands presenting (113) facets on the free (001)Si surface with various non uniform composition inside the islands. The deformation inside the islands and Raman spectroscopy are discussed.

  10. Porous SiC/SiC composites development for industrial application

    Maeta, S.; Hinoki, T.

    2014-01-01

    Silicon carbide (SiC) is promising structural materials in nuclear fields due to an excellent irradiation resistance and low activation characteristics. Conventional SiC fibers reinforced SiC matrix (SiC/SiC composites) fabricated by liquid phase sintering (LPS-SiC/SiC composites) have been required high cost and long processing time. And microstructure and mechanical property data of finally obtained LPS-SiC/SiC composites are easily scattered, because quality of the composites depend on personal skill. Thus, conventional LPS-SiC/SiC composites are inadequate for industrial use. In order to overcome these issues, the novel “porous SiC/SiC composites” have been developed by means of liquid phase sintering fabrication process. The composites consist of porous SiC matrix and SiC fibers without conventional carbon interfacial layer. The composites don’t have concerns of the degradation interfacial layer at the severe accident. Porous SiC/SiC composites preform was prepared with a thin sheet shape of SiC, sintering additives and carbon powder mixture by tape casting process which was adopted because of productive and high yielding rate fabrication process. The preform was stacked with SiC fibers and sintered in hot-press at the high temperature in argon environment. The sintered preform was decarburized obtain porous matrix structure by heat-treatment in air. Moreover, mechanical property data scattering of the obtained porous SiC/SiC composites decreased. In the flexural test, the porous SiC/SiC composites showed pseudo-ductile behavior with sufficient strength even after heat treatment at high temperature in air. From these conclusions, it was proven that porous SiC/SiC composites were reliable material at severe environment such as high temperature in air, by introducing tape casting fabrication process that could produce reproducible materials with low cost and simple way. Therefore development of porous SiC/SiC composites for industrial application was

  11. Double transparent conducting layers for Si photovoltaics

    Yun, Ju-Hyung [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States); Kim, Joondong, E-mail: joonkim@incheon.ac.kr [Department of Electrical Engineering, Incheon National University, Incheon, 406772 (Korea, Republic of); Park, Yun Chang [Measurement and Analysis Division, National Nanofab Center (NNFC), Daejeon 305806 (Korea, Republic of); Moon, Sang-Jin [Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 305-600 (Korea, Republic of); Anderson, Wayne A. [Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260 (United States)

    2013-11-29

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process.

  12. Dynamic behaviors of laser ablated Si particles

    Ohyanagi, T.; Murakami, K.; Miyashita, A.; Yoda, O.

    1995-01-01

    The dynamics of laser-ablated Si particles produced by laser ablation have been investigated by time-and-space resolved X-ray absorption spectroscopy in a time scale ranging from 0 ns to 120 ns with a time resolution of 10 ns. Neutral and charged particles are observed through all X-ray absorption spectra. Assignments of transitions from 2s and 2p initial states to higher Rydberg states of Si atom and ions are achieved, and we experimentally determine the L II,III absorption edges of neutral Si atom (Si 0 ) and Si + , Si 2+ , Si 3+ and Si 4+ ions. The main ablated particles are found to be Si atom and Si ions in the initial stage of 0 ns to 120 ns. The relative amounts depend strongly on times and laser energy densities. We find that the spatial distributions of particles produced by laser ablation are changed with supersonic helium gas bombardment, but no cluster formation takes place. This suggests that a higher-density region of helium gas is formed at the top of the plume of ablated particles, and free expansion of particles is restrained by this helium cloud, and that it takes more than 120 ns to form Si clusters. (author)

  13. Double transparent conducting layers for Si photovoltaics

    Yun, Ju-Hyung; Kim, Joondong; Park, Yun Chang; Moon, Sang-Jin; Anderson, Wayne A.

    2013-01-01

    Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell. - Highlights: • Double transparent conducting oxide films form a heterojunction to Si. • A quality indium-tin-oxide film was grown above an Al-doped zinc oxide template. • Heterojunction Si solar cell was made without an intentional doping process

  14. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

    Varzgar, John B.; Kanoun, Mehdi; Uppal, Suresh; Chattopadhyay, Sanatan; Tsang, Yuk Lun; Escobedo-Cousins, Enrique; Olsen, Sarah H.; O'Neill, Anthony; Hellstroem, Per-Erik; Edholm, Jonas; Ostling, Mikael; Lyutovich, Klara; Oehme, Michael; Kasper, Erich

    2006-01-01

    The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox ) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9 x 10 4 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44 x 10 5 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj ) compared to Q inj in bulk Si. Current-voltage (I-V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5 x 10 4 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si

  15. Innovative SiC/SiC composite for nuclear applications

    Chaffron, L.; Sauder, C.; Lorrette, C.; Briottet, L.; Michaux, A.; Gelebart, L.; Coupe, A.; Zabiego, M.; Le Flem, M.; Seran, J. L.

    2013-01-01

    Among various refractory materials, SiC/SiC ceramic matrix composites (CMC) are of prime interest for fusion and advanced fission energy applications, due to their excellent irradiation tolerance and safety features (low activation, low tritium permeability,K). Initially developed as fuel cladding materials for the Fourth generation Gas cooled Fast Reactor (GFR), this material has been recently envisaged by CEA for different core structures of Sodium Fast Reactor (SFR) which combines fast neutrons and high temperature (500 deg.C). Regarding fuel cladding generic application, in the case of GFR, the first challenge facing this project is to demonstrate the feasibility of a fuel operating under very harsh conditions that are (i) temperatures of structures up to 700 deg.C in nominal and over 1600 deg.C in accidental conditions, (ii) irradiation damage higher than 60 dpa SiC , (iii) neutronic transparency, which disqualifies conventional refractory metals as structural core materials, (iv) mechanical behavior that guarantees in most circumstances the integrity of the first barrier (e.g.: ε> 0.5%), which excludes monolithic ceramics and therefore encourages the development of new types of fibrous composites SiC/SiC adapted to the fast reactor conditions. No existing material being capable to match all these requirements, CEA has launched an ambitious program of development of an advanced material satisfying the specifications [1]. This project, that implies many laboratories, inside and outside CEA, has permitted to obtain a very high quality compound that meets most of the challenging requirements. We present hereinafter few recent results obtained regarding the development of the composite. One of the most relevant challenges was to make a gas-tight composite up to the ultimate rupture. Indeed, multi-cracking of the matrix is the counterpart of the damageable behavior observed in these amazing compounds. Among different solutions envisaged, an innovative one has been

  16. Characterization of defects in Si and SiO2-Si using positrons

    Asoka-Kumar, P.; Lynn, K.G.

    1993-01-01

    Positron annihilation spectroscopy of overlayers, interfaces, and buried regions of semiconductors has seen a rapid growth in recent years. The characteristics of the annihilation gamma rays depend strongly on the local environment of the annihilation sites, and can be used to probe defect concentrations in a range inaccessible to conventional defect probes. Some of the recent success of the technique in examining low concentrations of point defects in technologically important Si-based structures is discussed

  17. MuSiK Projekt:Multimaterialdruck von C/Si/SiC-Keramiken

    Marigo, Gloria; Wahl, Larissa; Nauditt, Gotthard

    2017-01-01

    Poster über den ersten 6 Monate von MuSiK Projekt. Additive Verfahren wurden ursprünglich zur effizienten Herstellung von Mustern und Prototypen entwickelt und bieten besondere Einsatzpotentiale, die mittlerweile auch für die Kleinserienproduktion hochinteressant sind. Im Bereich der keramischen Komponenten ist der Einsatz additiver Verfahren bislang nicht weit verbreitet. Ein Grund dafür ist unter anderem die eingeschränkte Verfügbarkeit der notwendigen Fertigungsanlagen und entsprech...

  18. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  19. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  20. Mechanical behavior of SiCf/SiC composites with alternating PyC/SiC multilayer interphases

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-01-01

    Highlights: ► Superior combination of flexural strength and fracture toughness of the 3D SiC/SiC composite was achieved by interface tailoring. ► Resulted composite possesses a much higher flexural strength and fracture toughness than its counterparts in literatures. ► Mechanisms that PyC/SiC multilayer coatings improve the mechanical properties were illustrated. -- Abstract: In order to tailor the fiber–matrix interface of continuous silicon carbide fiber reinforced silicon carbide (SiC f /SiC) composites for improved fracture toughness, alternating pyrolytic carbon/silicon carbide (PyC/SiC) multilayer coatings were applied to the KD-I SiC fibers using chemical vapor deposition (CVD) method. Three dimensional (3D) KD-I SiC f /SiC composites reinforced by these coated fibers were fabricated using a precursor infiltration and pyrolysis (PIP) process. The interfacial characteristics were determined by the fiber push-out test and microstructural examination using scanning electron microscopy (SEM). The effect of interface coatings on composite mechanical properties was evaluated by single-edge notched beam (SENB) test and three-point bending test. The results indicate that the PyC/SiC multilayer coatings led to an optimum interfacial bonding between fibers and matrix and greatly improved the fracture toughness of the composites.

  1. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  2. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  3. Destino do nitrogênio em videiras 'chardonnay' e 'riesling renano' quando aplicado no inchamento das gemas Nitrogen destiny in 'chardonnay' and 'riesling renano' grapevines, when applied in bud break

    Gustavo Brunetto

    2006-12-01

    Full Text Available No Rio Grande do Sul, o teor de N na folha inteira ou pecíolo e a expectativa de produção têm sido usados tanto para a tomada de decisão quanto no estabelecimento da dose de N a ser aplicada na cultura da videira. Entretanto, se carece de conhecimentos sobre a utilização, a distribuição e a acumulação na planta do N aplicado. O presente trabalho objetivou estimar o destino do N em videiras produtivas quando aplicado na época do inchamento das gemas. O experimento foi conduzido na safra 2002-2003 em um vinhedo de viníferas, cvs. Chardonnay e Riesling Renano, na Embrapa Uva e Vinho, em Bento Gonçalves - RS, sobre um Neossolo Litólico. As videiras receberam a aplicação de 15,91g N planta-1 no inchamento das gemas, correspondendo a 40 kg N ha-1, enriquecido com 4% de átomos 15N em excesso. Foram coletadas gemas brotadas e folhas na parte central do ramo emitido no ano, em oito épocas na cv. Chardonnay e sete épocas na cv. Riesling Renano. Na última coleta das folhas, as videiras foram cortadas e separadas em cachos, folhas, ramos do ano, ramos dos anos anteriores e caule. Foram secadas, determinada a produção de matéria seca e os teores de N total e 15N. Os resultados mostraram que a maior porcentagem de N nas folhas das videiras, cvs. Chardonnay e Riesling Renano, na brotação até a colheita da uva, é derivada de formas diferentes de N aplicado no inchamento das gemas. Na colheita da uva, a maior quantidade do N acumulado nas partes anuais e perenes das videiras é derivada do N do solo, sendo muito pequenas as quantidades de N aplicado no inchamento das gemas armazenado nas partes perenes.The grapevines N fertilization levels in Southern Brazil use to be accounted as function of N leaf and leaf petioles rates for a limit yield expectation, without any information about the inner N dynamics in the grapevines. This experiment was carried out in 2002/03, to estimate the N destiny as N broadcasted on the vineyard soil with

  4. Data mining to estimate broiler mortality when exposed to heat wave Mineração de dados e estimativa da mortalidade alta de frangos quando expostos a onda de calor

    Marcos Martinez Vale

    2008-01-01

    rvore de decisão para modelar o impacto da incidência de onda de calor na mortalidade de frangos de corte. O Índice de Temperatura e Umidade (ITU foi utilizado para descrever parte dos dados ambientais. A técnica de Mineração de Dados permitiu a construção de três modelos compreensíveis para estimar a alta mortalidade em frangos de corte. Os modelos gerados pela abordagem de seleção de atributos por Análise dos Componentes Principais e Wrapper apresentaram igual desempenho com uma precisão total de 89,3% e a classificação para alta mortalidade foi de 83,3%. Quando a seleção foi feita por especialistas do domínio, a precisão do modelo foi de 85,7%, e a da classificação para alta mortalidade foi de 76,9%. Resultados meteorológicos e o ITU calculada a partir de estações meteorológicas permitiram identificar condições ambientais prejudiciais para frangos entre 29 e 42 dias de vida. A técnica de Mineração de Dados é aplicável para construir modelos preditivos para a produção animal.

  5. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  6. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  7. Propagation of misfit dislocations from buffer/Si interface into Si

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  8. Comparative study of anisotropic superconductivity in CaAlSi and CaGaSi

    Tamegai, T.; Uozato, K.; Kasahara, S.; Nakagawa, T.; Tokunaga, M.

    2005-01-01

    In order to get some insight into the origin of the anomalous angular dependence of H c2 in a layered intermetallic compound CaAlSi, electronic, superconducting, and structural properties are compared between CaAlSi and CaGaSi. The angular dependence of H c2 in CaGaSi is well described by the anisotropic GL model. Parallel to this finding, the pronounced lattice modulation accompanying the superstructure along the c-axis in CaAlSi is absent in CaGaSi. A relatively large specific heat jump at the superconducting transition in CaAlSi compared with CaGaSi indicates the presence of strong electron-phonon coupling in CaAlSi, which may cause the superstructure and the anomalous angular dependence of H c2

  9. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  10. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  11. C-H and C-C activation of n -butane with zirconium hydrides supported on SBA15 containing N-donor ligands: [(≡SiNH-)(≡SiX-)ZrH2], [(≡SiNH-)(≡SiX-)2ZrH], and[(≡SiN=)(≡SiX-)ZrH] (X = -NH-, -O-). A DFT study

    Pasha, Farhan Ahmad; Bendjeriou-Sedjerari, Anissa; Huang, Kuo-Wei; Basset, Jean-Marie

    2014-01-01

    : [(≡SiNH-)(≡SiO-)ZrH2] (A), [(≡SiNH-)2ZrH2] (B), [(≡SiNH-)(≡SiO-) 2ZrH] (C), [(≡SiNH-)2(≡SiO-)ZrH] (D), [(≡SiN=)(≡Si-O-)ZrH] (E), and [(≡SiN=)(≡SiNH-)ZrH] (F). The roles of these hydrides have been investigated in C-H/C-C bond activation and cleavage

  12. Impact resistance of uncoated SiC/SiC composites

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 deg. C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded. At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained ∼50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing

  13. Effect of germanium concentrations on tunnelling current calculation of Si/Si1-xGex/Si heterojunction bipolar transistor

    Hasanah, L.; Suhendi, E.; Khairrurijal

    2018-05-01

    Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased.

  14. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiN{sub x}/SiN{sub y} multilayers

    Jiang, Xiaofan; Ma, Zhongyuan, E-mail: zyma@nju.edu.cn; Yang, Huafeng; Yu, Jie; Wang, Wen; Zhang, Wenping; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji; Huang, Xinfan; Feng, Duan [National Laboratory of Solid State Microstructures, Jiangsu Provincial Key Laboratory of Photonic Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

    2014-09-28

    Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiN{sub x}/SiN{sub y} multilayers with high on/off ratio of 10{sup 9}. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

  15. Influence of substrate treatment on the growth of advanced core–shell alloys and compounds of FeSi@SiO2 and SiO2 nanowires

    Thabethe, S

    2014-12-01

    Full Text Available Advanced core–shell FeSi@SiO(subx) nanowires are observed when FeCl(sub3) vapour is made to flow over a SiO(sub2)/Si substrate at 1100 degress C. The thickness of the SiO(subx) sheath (d0) is found to depend inversely as the period of time of HF...

  16. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts

    Zhang, B.; Yu, W.; Zhao, Q.T.; Buca, D.; Breuer, U.; Hartmann, J.-M.; Holländer, B.; Mantl, S.; Zhang, M.; Wang, X.

    2013-01-01

    We have investigated the morphology and electrical properties of NiSiGe/SiGe contact by C + ions pre-implanted into relaxed Si 0.8 Ge 0.2 layers. Cross-section transmission electron microscopy revealed that both the surface and interface of NiSiGe were improved by C + ions implantation. In addition, the effective hole Schottky barrier heights (Φ Bp ) of NiSiGe/SiGe were extracted. Φ Bp was observed to decrease substantially with an increase in C + ion implantation dose

  17. Si K-edge XANES study of SiOxCyHz amorphous polymeric materials

    Chaboy, J.; Barranco, A.; Yanguas-Gil, A.; Yubero, F.; Gonzalez-Elipe, A. R.

    2007-01-01

    This work reports on x-ray absorption spectroscopy study at the Si K edge of several amorphous SiO x C y H z polymers prepared by plasma-enhanced chemical-vapor deposition with different C/O ratios. SiO 2 and SiC have been used as reference materials. The comparison of the experimental Si K-edge x-ray absorption near-edge structure spectra with theoretical computations based on multiple scattering theory has allowed us to monitor the modification of the local coordination around Si as a function of the overall C/O ratio in this kind of materials

  18. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong

    2010-01-01

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 μm and 0.7 μm are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  19. An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure

    Pu Hongbin; Cao Lin; Ren Jie; Chen Zhiming; Nan Yagong, E-mail: puhongbin@xaut.edu.c [Xi' an University of Technology, Xi' an 710048 (China)

    2010-04-15

    An optically controlled SiC/SiCGe lateral power transistor based on superjunction structure has been proposed, in which n-SiCGe/p-SiC superjunction structure is employed to improve device figure of merit. Performance of the novel optically controlled power transistor was simulated using Silvaco Atlas tools, which has shown that the device has a very good response to the visible light and the near infrared light. The optoelectronic responsivities of the device at 0.5 {mu}m and 0.7 {mu}m are 330 mA/W and 76.2 mA/W at 2 V based voltage, respectively. (semiconductor devices)

  20. Interfacial microstructure of NiSi x/HfO2/SiO x/Si gate stacks

    Gribelyuk, M.A.; Cabral, C.; Gusev, E.P.; Narayanan, V.

    2007-01-01

    Integration of NiSi x based fully silicided metal gates with HfO 2 high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi x film. Ni content varies near the NiSi/HfO x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi x /HfO 2 interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi x /HfO x was found higher than that of poly-Si/HfO 2 , likely due to compositional non-uniformity of NiSi x . No intermixing between Hf, Ni and Si beyond interfacial roughness was observed

  1. Effect of PECVD SiNx/SiOy Nx –Si interface property on surface passivation of silicon wafer

    Jia Xiao-Jie; Zhou Chun-Lan; Zhou Su; Wang Wen-Jing; Zhu Jun-Jie

    2016-01-01

    It is studied in this paper that the electrical characteristics of the interface between SiO y N x /SiN x stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the SiO y N x layer on interface parameters, such as interface state density Di t and fixed charge Q f , and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting a thin SiO y N x layer between the SiN x and the silicon wafer can suppress Q f in the film and D it at the interface. The positive Q f and D it and a high surface recombination velocity in stacks are observed to increase with the introduced oxygen and minimal hydrogen in the SiO y N x film increasing. Prepared by deposition at a low temperature and a low ratio of N 2 O/SiH 4 flow rate, the SiO y N x /SiN x stacks result in a low effective surface recombination velocity (S eff ) of 6 cm/s on a p-type 1 Ω·cm–5 Ω·cm FZ silicon wafer. The positive relationship between S eff and D it suggests that the saturation of the interface defect is the main passivation mechanism although the field-effect passivation provided by the fixed charges also make a contribution to it. (paper)

  2. Substituição do milho por farelo de trigo ou farelo de glúten de milho na ração de bovinos de corte em terminação - DOI: 10.4025/actascianimsci.v29i1.251 Substitution of corn grain by wheat middlings or corn gluten feed in the finishing bulls diet - DOI: 10.4025/actascianimsci.v29i1.251

    Térssio Roger Ramalho

    2007-11-01

    Full Text Available O objetivo do trabalho foi avaliar a substituição do milho moído fino (MM por farelo de trigo (FT ou farelo de glúten de milho (FGM na ração de 36 bovinos não castrados, em terminação (14 meses; peso inicial de 382 kg durante 87 dias. A ração continha 24% de silagem de capim e 76% de concentrado, constituído por polpa cítrica, farelo de soja, uréia, minerais, bicarbonato de sódio e monensina sódica, além de uma das fontes energéticas testadas. A substituição de MM por FT aumentou a ingestão de FDN (pThe objective of this work was to evaluate the substitution of finely ground (GC corn by wheat middlings (WM or dried corn gluten feed (CGF in finishing feedlot diets. Thirty-six yearling bulls (382 kg average initial live weight; 14 months old were fed during 87 days. The diets contained 24% grass silage and 76% concentrate, formulated with dried citrus pulp, soybean meal, urea, mineral-vitamin mix, sodium bicarbonate, sodium monensin, and one of the energy sources tested. The substitution of wheat middlings for corn increased NDF intake (p<0.05. However, no effect was observed on other measured parameters. Substitution of corn gluten feed for ground corn reduced dry matter intake (p<0.05 and average daily gain (p<0.10, increased NDF intake (p<0.05, but had no effect on feed efficiency. These diets showed no differences in the observed values of net energy of maintenance or gain. The ratio observed/expected net energy for the diet differs from the other treatments. For this type of diet, GC may be completely replaced by WM or CGF with no depression on feed efficiency or on diet net energy. NRC (2001 underestimates TDN values and net energy estimates for WM and CGF.

  3. Characteristics productive and meat quality of broiler chickens fed finisher diet without vitamin-mineral supplement or limestone and dicalcium phosphate and submitted to heat stress pre-slaughter Características produtivas e de qualidade de carne de frangos de corte submetidos a dietas de terminação sem suplemento vitamínicomineral ou calcário e fosfato bicálcico e submetidos a estresse térmico pré-abate

    Sandra Regina Brunelli

    2012-02-01

    Full Text Available Search mechanisms that can reduce the cost of production of poultry is an important factor in the poultry industry. Thus the objective of this study was to evaluate the removal of vitamin and mineral supplement or limestone and dicalcium phosphate feed during the finishing phase, further of the broilers chickens to heat stress pre-slaughter. Hybro male broiler (n=108 aged 42 days old were evaluated until 49 days old to evaluate the performance, carcass and cuts yield, blood biochemistry and meat quality. The results showed that the removal of vitamin and mineral supplement or limestone and dicalcium phosphate feed during the finishing phase did not impair the performance, carcass characteristics and meat quality, as well as showing a possible mechanism to reduce production costs. While heat stress pre-slaughter provided a poor meat quality of poultry. Buscar mecanismos que possam reduzir o custo de produção das aves, sem reduzir o desempenho e a qualidade do produto final é um importante fator dentro da cadeia avícola. Desta forma, o objetivo deste trabalho foi avaliar a retirada do suplemento vitamínico-mineral ou calcário e fosfato bicálcico da ração na fase de acabamento, além de submeter os frangos de corte a estresse térmico pré-abate visando avaliar o desempenho e a qualidade de carne do peito. Foram utilizados 108 frangos de corte machos da linhagem Hybro com 42 dias de idade, que receberam uma ração controle, ração sem suplemento vitamínico-mineral e sem calcário e fosfato bicálcico, dos 42 aos 49 dias de idade. Foram avaliados os dados de desempenho, rendimento de carcaça e cortes, bioquímica do sangue e qualidade de carne. Os resultados mostraram que a retirada do suplemento vitamínico-mineral ou o calcário e o fosfato bicálcico da dieta de terminação não prejudicou o desempenho, características de carcaça e qualidade de carne, mostrando assim como um possível mecanismo para reduzir os custos de produ

  4. Magnetron-sputter epitaxy of β-FeSi2(220)/Si(111) and β-FeSi2(431)/Si(001) thin films at elevated temperatures

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi

    2012-01-01

    β-FeSi 2 thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 °C. On Si(111), the growth is consistent with the commonly observed orientation of [001]β-FeSi 2 (220)//[1-10]Si(111) having three variants, in-plane rotated 120° with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]β-FeSi 2 (431)//[110]Si(001) with four variants, which is hitherto unknown for growing β-FeSi 2 . Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between β-FeSi 2 grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of β-FeSi 2 /Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of β-FeSi 2 (431)/Si(001) is larger than that on the surface of β-FeSi 2 (220)/Si(111).

  5. Matrix densification of SiC composites by sintering process

    Kim, Young-Wook; Jang, Doo-Hee; Eom, Jung-Hye; Chun, Yong-Seong

    2007-02-01

    The objectives of this research are to develop a process for dense SiC fiber-SiC composites with a porosity of 5% or less and to develop high-strength SiC fiber-SiC composites with a strength of 500 MPa or higher. To meet the above objectives, the following research topics were investigated ; new process development for the densification of SiC fiber-SiC composites, effect of processing parameters on densification of SiC fiber-SiC composites, effect of additive composition on matrix microstructure, effects of additive composition and content on densification of SiC fiber-SiC composites, mechanical properties of SiC fiber-SiC composites, effect of fiber coating on densification and strength of SiC fiber-SiC composites, development of new additive composition. There has been a great deal of progress in the development of technologies for the processing and densification of SiC fiber-SiC composites and in better understanding of additive-densification-mechanical property relations as results of this project. Based on the progress, dense SiC fiber-SiC composites (≥97%) and high strength SiC fiber-SiC composites (≥600 MPa) have been developed. Development of 2D SiC fiber-SiC composites with a relative density of ≥97% and a strength of ≥600 MPa can be counted as a notable achievement

  6. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  7. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  8. Electrical resistivity and thermal conductivity of SiC/Si ecoceramics prepared from sapele wood biocarbon

    Parfen'eva, L. S.; Orlova, T. S.; Smirnov, B. I.; Smirnov, I. A.; Misiorek, H.; Mucha, J.; Jezowski, A.; Gutierrez-Pardo, A.; Ramirez-Rico, J.

    2012-10-01

    Samples of β-SiC/Si ecoceramics with a silicon concentration of ˜21 vol % have been prepared using a series of consecutive procedures (carbonization of sapele wood biocarbon, synthesis of high-porosity biocarbon with channel-type pores, infiltration of molten silicon into empty channels of the biocarbon, formation of β-SiC, and retention of residual silicon in channels of β-SiC). The electrical resistivity ρ and thermal conductivity κ of the β-SiC/Si ecoceramic samples have been measured in the temperature range 5-300 K. The values of ρ{Si/chan}( T) and κ{Si/chan}( T) have been determined for silicon Sichan located in β-SiC channels of the synthesized β-SiC/Si ecoceramics. Based on the performed analysis of the obtained results, the concentration of charge carriers (holes) in Sichan has been estimated as p ˜ 1019 cm-3. The factors that can be responsible for such a high value of p have been discussed. The prospects for practical application of β-SiC/Si ecoceramics have been considered.

  9. Polarized luminescence of nc-Si-SiO x nanostructures on silicon substrates with patterned surface

    Michailovska, Katerina; Mynko, Viktor; Indutnyi, Ivan; Shepeliavyi, Petro

    2018-05-01

    Polarization characteristics and spectra of photoluminescence (PL) of nc-Si-SiO x structures formed on the patterned and plane c-Si substrates are studied. The interference lithography with vacuum chalcogenide photoresist and anisotropic wet etching are used to form a periodic relief (diffraction grating) on the surface of the substrates. The studied nc-Si-SiO x structures were produced by oblique-angle deposition of Si monoxide in vacuum and the subsequent high-temperature annealing. The linear polarization memory (PM) effect in PL of studied structure on plane substrate is manifested only after the treatment of the structures in HF and is explained by the presence of elongated Si nanoparticles in the SiO x nanocolumns. But the PL output from the nc-Si-SiO x structure on the patterned substrate depends on how this radiation is polarized with respect to the grating grooves and is much less dependent on the polarization of the exciting light. The measured reflection spectra of nc-Si-SiO x structure on the patterned c-Si substrate confirmed the influence of pattern on the extraction of polarized PL.

  10. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-01

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  11. Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.

    Yu, Yeon-Tae; Naik, Gautam Kumar; Lim, Young-Bin; Yoon, Jeong-Mo

    2017-11-25

    The Si-coated SiC (Si-SiC) composite nanoparticle was prepared by non-transferred arc thermal plasma processing of solid-state synthesized SiC powder and was used as a sintering additive for SiC ceramic formation. Sintered SiC pellet was prepared by spark plasma sintering (SPS) process, and the effect of nano-sized Si-SiC composite particles on the sintering behavior of micron-sized SiC powder was investigated. The mixing ratio of Si-SiC composite nanoparticle to micron-sized SiC was optimized to 10 wt%. Vicker's hardness and relative density was increased with increasing sintering temperature and holding time. The relative density and Vicker's hardness was further increased by reaction bonding using additional activated carbon to the mixture of micron-sized SiC and nano-sized Si-SiC. The maximum relative density (97.1%) and Vicker's hardness (31.4 GPa) were recorded at 1800 °C sintering temperature for 1 min holding time, when 0.2 wt% additional activated carbon was added to the mixture of SiC/Si-SiC.

  12. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  13. siRNA and innate immunity.

    Robbins, Marjorie; Judge, Adam; MacLachlan, Ian

    2009-06-01

    Canonical small interfering RNA (siRNA) duplexes are potent activators of the mammalian innate immune system. The induction of innate immunity by siRNA is dependent on siRNA structure and sequence, method of delivery, and cell type. Synthetic siRNA in delivery vehicles that facilitate cellular uptake can induce high levels of inflammatory cytokines and interferons after systemic administration in mammals and in primary human blood cell cultures. This activation is predominantly mediated by immune cells, normally via a Toll-like receptor (TLR) pathway. The siRNA sequence dependency of these pathways varies with the type and location of the TLR involved. Alternatively nonimmune cell activation may also occur, typically resulting from siRNA interaction with cytoplasmic RNA sensors such as RIG1. As immune activation by siRNA-based drugs represents an undesirable side effect due to the considerable toxicities associated with excessive cytokine release in humans, understanding and abrogating this activity will be a critical component in the development of safe and effective therapeutics. This review describes the intracellular mechanisms of innate immune activation by siRNA, the design of appropriate sequences and chemical modification approaches, and suitable experimental methods for studying their effects, with a view toward reducing siRNA-mediated off-target effects.

  14. SiD Letter of Intent

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  15. Quando o índice bispectral (BIS pode fornecer valores espúrios Cuando el índice bispectral (BIS puede suministrar valores falsos When the bispectral index (Bis can give false results

    Leonardo Teixeira Domingues Duarte

    2009-02-01

    Full Text Available JUSTIFICATIVA E OBJETIVOS: O índice bispectral (BIS é um parâmetro multifatorial derivado do eletroencefalograma (EEG que permite a monitorização do componente hipnótico da anestesia. Foi obtido a partir de algoritmo derivado da análise de grande número de EEGs de voluntários e pacientes submetidos a sedações e anestesia geral com diferentes agentes anestésicos. Além de outros benefícios, o uso do BIS para monitorização da profundidade da anestesia reduz a ocorrência de despertar e memória intra-operatória. Esta revisão teve o objetivo de apresentar situações clínicas em que o BIS aponta valores espúrios, falsamente elevados ou reduzidos, em decorrência de condições do paciente ou ações de anestésicos não-previstos quando da elaboração do seu algoritmo. CONTEÚDO: Os valores do BIS podem sofrer alteração e influência em variadas situações clínicas em que há padrões anormais do EEG; efeito de diferentes anestésicos e outros fármacos não-incluídos na elaboração de seu algoritmo; interferência de equipamentos elétricos; bem como decorrentes de peculiaridades do monitor. CONCLUSÃO: Apesar de o algoritmo do BIS ter sofrido diversas alterações desde a sua primeira versão, essas situações que determinam variações espúrias dos valores do BIS devem ser reconhecidas pelo anestesiologista a fim de evitar complicações, sejam conseqüentes à sobredose anestésica, sejam por subdoses que poderão causar despertar e memória intra-operatória.JUSTIFICATIVA Y OBJETIVOS: El índice bispectral (BIS es un parámetro multifactorial derivado del electroencefalograma (EEG, que permite la monitorización del componente hipnótico de la anestesia. Fue obtenido a partir de algoritmo derivado del análisis de un gran número de EEG de voluntarios y pacientes sometidos a sedaciones y anestesia general con diferentes agentes anestésicos. Además de otros beneficios, el uso del BIS para la monitorización de la

  16. Violência, crime e polícia: o que os favelados dizem quando falam desses temas? Violence, crime and police: what do people who live in slums say when they talk about these subjects?

    Luiz Antonio Machado da Silva

    2007-12-01

    Full Text Available O artigo baseia-se em duas pesquisas qualitativas em favelas cariocas, especialmente em uma de suas atividades, aproximadamente 50 horas de dinâmica com 15 grupos focais (envolvendo 150 moradores de mais de 40 favelas. Designou-se de "coletivos de confiança" os grupos focais compostos a partir de relacionamento anterior dos participantes com algum dos pesquisadores, capaz de, através do conhecimento pessoal, gerar alguma confiança prévia. Pensada com vistas a minimizar os prováveis efeitos de uma "lei do silêncio" imposta pelos agentes da violência nessas localidades, esta forma de recrutamento demonstrou ter sido adequada. O texto analisa os enunciados colhidos durante os debates, claramente concentrados nas diferentes modalidades de presença e atuação dos bandos de criminosos e das forças policiais nas favelas cariocas. Sustenta que, menos que questionar a violência criminal e policial como um todo, eles expressam intensa preocupação com algumas de suas manifestações, aquelas que impedem o prosseguimento das rotinas diárias. Sem ser diretamente tematizado, este é o horizonte de atenção que organiza todo o discurso crítico "para fora" das favelas, bem como as atitudes e condutas nos locais de moradia. Os autores avançam um pouco mais, argumentando que, em suas descrições e denúncias, os moradores demonstram não lidar da mesma maneira com todas as formas de desestabilização de suas rotinas, evitando homogeneizar os responsáveis. Assim é que, de um lado, a violência deflagrada durante as famosas "operações" policiais e sempre presente na arbitrariedade da conduta regular desses agentes aparece associada ao seu caráter quase totalmente imprevisível. De outro lado, quando se trata da violência envolvida nas práticas dos traficantes, com os quais os moradores são obrigados a compartilhar o mesmo território, há muitos relatos de tentativas (bem e mal/sucedidas de redução da imprevisibilidade do fluxo da vida

  17. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  18. Characterization of SiC–SiC composites for accident tolerant fuel cladding

    Deck, C.P., E-mail: Christian.Deck@ga.com; Jacobsen, G.M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H.E.; Back, C.A.

    2015-11-15

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC–SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC–SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  19. Mechanism of Si intercalation in defective graphene on SiC

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo; Upadhyay Kahaly, M.

    2012-01-01

    Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density

  20. Formation mechanism of SiC in C-Si system by ion irradiation

    Hishita, Shunichi; Aizawa, Takashi; Suehara, Shigeru; Haneda, Hajime

    2003-01-01

    The irradiation effects of 2 MeV He + , Ne + , and Ar + ions on the film structure of the C-Si system were investigated with RHEED and XPS. The ion dose dependence of the SiC formation was kinetically analyzed. The SiC formation at moderate temperature was achieved by 2 MeV ion irradiation when the thickness of the initial carbon films was appropriate. The evolution process of the SiC film thickness consisted of the 3 stages. The first stage was the steep increase of the SiC, and was governed by the inelastic collision. The second was the gentle increase of the SiC, and was governed by the diffusion. The last was the decrease of the SiC, and was caused by the sputtering. The formation mechanism of the SiC was discussed. (author)

  1. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111/Si(111

    Abe Shunsuke

    2010-01-01

    Full Text Available Abstract Surface chemistry involved in the epitaxy of graphene by sublimating Si atoms from the surface of epitaxial 3C-SiC(111 thin films on Si(111 has been studied. The change in the surface composition during graphene epitaxy is monitored by in situ temperature-programmed desorption spectroscopy using deuterium as a probe (D2-TPD and complementarily by ex situ Raman and C1s core-level spectroscopies. The surface of the 3C-SiC(111/Si(111 is Si-terminated before the graphitization, and it becomes C-terminated via the formation of C-rich (6√3 × 6√3R30° reconstruction as the graphitization proceeds, in a similar manner as the epitaxy of graphene on Si-terminated 6H-SiC(0001 proceeds.

  2. Dielectric Properties of SiCf/PyC/SiC Composites After Oxidation

    SONG Huihui; ZHOU Wancheng; LUO Fa; QING Yuchang; CHEN Malin; LI Zhimin

    2016-01-01

    In this paper, the SiC fiber-reinforced SiC matrix composites with a 0.15mm thick pyrocarbon interphase (notedas SiCf/PyC/SiC) were prepared by chemical vapor infiltration (CVI). The SiCf/PyC/SiC were oxidized in air at 950℃ for 50h. The dielectric properties after this high temperature oxidation were investigated in X-band from room temperature (RT) to 700℃. Results suggested that:e' of the SiCf/PyC/SiC after oxidation increased at first then de-creased with temperature elevating;e" increased with temperature raising in the temperature range studied.

  3. Fermi surfaces of YRu2Si2 and LaRu2Si2

    Settai, R.; Ikezawa, H.; Toshima, H.; Takashita, M.; Ebihara, T.; Sugawara, H.; Kimura, T.; Motoki, K.; Onuki, Y.

    1995-01-01

    We have measured the de Haas-van Alphen effect of YRu 2 Si 2 and LaRu 2 Si 2 to clarify the Fermi surfaces and cyclotron masses. Main hole-Fermi surfaces of both compounds with a distorted ellipsoid shape are similar, occupying about half of the Brillouin zone. The small hole-Fermi surfaces with the shape of a rugby ball are three in number for LaRu 2 Si 2 , and one for YRu 2 Si 2 . An electron-Fermi surface consists of a doughnut like shape for LaRu 2 Si 2 , while a cylinder along the [001] direction and a multiply-connected shape exist for YRu 2 Si 2 . The cyclotron masses of YRu 2 Si 2 are a little larger than those of LaRu 2 Si 2 . ((orig.))

  4. A sensitive optical sensor based on DNA-labelled Si@SiO2 core ...

    2017-10-31

    Oct 31, 2017 ... Si@SiO2 core–shell nanoparticles were proposed for the development of fluorescent mercury ... orophores, due to their unique optical properties, such as .... were made by evaporating one drop of the sample solution on.

  5. Ni-Si oxide as an inducing crystallization source for making poly-Si

    Meng, Zhiguo; Liu, Zhaojun; Li, Juan; Wu, Chunya; Xiong, Shaozhen [Institute of Photo-electronics, Nankai University, Tianjin (China); Zhao, Shuyun; Wong, Man; Kwok, Hoi Sing [Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong (China)

    2010-04-15

    Nickel silicon oxide mixture was sputtered on a-Si with Ni-Si alloy target with Ni:Si weight ratio of 1:9 and used as a new inducing source for metal induced lateral crystallization (MILC). The characteristics of the resulted poly-Si materials induced by Ni-Si oxide with different thickness were nearly the same. This means the metal induced crystallization with this new inducing source has wide processing tolerance to make MILC poly-Si. Besides, it reduced the residual Ni content in the resulted poly-Si film. The transfer characteristic curve of poly-Si TFT and a TFT-OLED display demo made with this kind of new inducing source were also presented in this paper. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Rod-like β-FeSi2 phase grown on Si (111) substrate

    Han Ming; Tanaka, Miyoko; Takeguchi, Masaki; Furuya, Kazuo

    2004-01-01

    Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi 2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi 2 phase. Upon annealing at 1073 K, the metastable c-FeSi 2 transforms into equilibrium β-FeSi 2 phase, the latter inherits completely the morphology of c-FeSi 2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting β-FeSi 2 on a Si substrate has been proposed in the present work

  7. Development of SiC/SiC composite for fusion application

    Kohyama, A.; Katoh, Y.; Snead, L.L.; Jones, R.H.

    2001-01-01

    The recent efforts to develop SiC/SiC composite materials for fusion application under the collaboration with Japan and the USA are provided, where material performance with and without radiation damage has been greatly improved. One of the accomplishments is development of the high performance reaction sintering process. Mechanical and thermal conductivity are improved extensively by process modification and optimization with inexpensive fabrication process. The major efforts to make SiC matrix by CVI, PIP and RS methods are introduced together with the representing baseline properties. The resent results on mechanical properties of SiC/SiC under neutron irradiation are quite positive. The composites with new SiC fibers, Hi-Nicalon Type-S, did not exhibit mechanical property degradation up to 10 dpa. Based on the materials data recently obtained, a very preliminary design window is provided and the future prospects of SiC/SiC technology integration is provided. (author)

  8. Fantasmas de si mesmo: uma leitura demoníaca de James e de Machado

    Marcelo Pen Parreira

    Full Text Available Este artigo prossegue na discussão sobre o papel do duplo no mundo desencantado da era liberal. Por meio da análise de algumas histórias de Henry James e de Machado de Assis, ele investiga a figuração do sujeito, esvaziado e iludido, assombrado por seu outro eu mutilado - imagem replicada tornada pavorosa pelo horror que o homem moderno comete contra si próprio. As narrativas de Machado, além disso, ao evocar personagens como que possuídos por vestígios de sua "herança bestial" ou por projeções de feitos mundanos (que eles metonimicamente tomam como sua essência integral, desestabilizam ainda mais o conceito de individuação. Nos dois autores, lidar com esse paradoxo também significa conduzir a narrativa a seus momentos negativos ou de falência, quando narrar deixa de ser possível.

  9. Effect of irradiation on thermal expansion of SiCf/SiC composites

    Senor, D.J.; Trimble, D.J.; Woods, J.J.

    1996-06-01

    Linear thermal expansion was measured on five different SiC-fiber-reinforced/SiC-matrix (SiC f /SiC) composite types in the unirradiated and irradiated conditions. Two matrices were studied in combination with Nicalon CG reinforcement and a 150 nm PyC fiber/matrix interface: chemical vapor infiltrated (CVI) SiC and liquid-phase polymer impregnated precursor (PIP) SiC. Composites of PIP SiC with Tyranno and HPZ fiber reinforcement and a 150 nm PyC interface were also tested, as were PIP SiC composites with Nicalon CG reinforcement and a 150 nm BN fiber/matrix interface. The irradiation was conducted in the Experimental Breeder Reactor-II at a nominal temperature of 1,000 C to doses of either 33 or 43 dpa-SiC. Irradiation caused complete fiber/matrix debonding in the CVI SiC composites due to a dimensional stability mismatch between fiber and matrix, while the PIP SiC composites partially retained their fiber/matrix interface after irradiation. However, the thermal expansion of all the materials tested was found to be primarily dependent on the matrix and independent of either the fiber or the fiber/matrix interface. Further, irradiation had no significant effect on thermal expansion for either the CVI SiC or PIP SiC composites. In general, the thermal expansion of the CVI SiC composites exceeded that of the PIP SiC composites, particularly at elevated temperatures, but the expansion of both matrix types was less than chemical vapor deposited (CVD) β-SiC at all temperatures

  10. Hybrid Integrated Si/SiN Platforms for Wideband Optical Processing

    2017-05-08

    annealing process, makes the process prone to dopant redistribution, that hinderers the SiN deposition after full Si device fabrication. To resolve...with 220 nm of crystalline Si. In parallel, a Si die goes through a wet oxidation process to grow 5 μm of thermal oxide. In the next step, 400 nm of... annealing methods. As a figure of merit in hydrophilic bonding, we monitored the surface roughness and bonding strength of a thin oxide layer to

  11. Formation of ferromagnetic interface between β-FeSi2 and Si(111) substrate

    Hattori, Azusa N.; Hattori, Ken; Kodama, Kenji; Hosoito, Nobuyoshi; Daimon, Hiroshi

    2007-01-01

    Epitaxial β-FeSi 2 thin films were grown on Si(111)7x7 clean surfaces by solid phase epitaxy in ultrahigh vacuum: iron deposition at low temperature and subsequent annealing. We found that a ferromagnetic interface layer of iron-rich silicides forms between a β-FeSi 2 surface layer and a Si(111) substrate spontaneously from transmission electron microscopy observations and magnetization measurements

  12. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    Youngblood, G.E.; Jones, R.H.

    1998-01-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 x 6 x 2 mm 3 with a span-to-depth ratio of 10/1

  13. Passivation of surface-nanostructured f-SiC and porous SiC

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  14. Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

    Dobrovolskiy, S.; Yakshin, A. E.; Tichelaar, F. D.; Verhoeven, J.; E. Louis,; F. Bijkerk,

    2010-01-01

    Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 key CHx+ ions. Only about 3% of the implanted carbon was transferred into the SIC, with a thin, 0.5-1 nm, buried SIC layer being formed. We

  15. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  16. siRNAmod: A database of experimentally validated chemically modified siRNAs.

    Dar, Showkat Ahmad; Thakur, Anamika; Qureshi, Abid; Kumar, Manoj

    2016-01-28

    Small interfering RNA (siRNA) technology has vast potential for functional genomics and development of therapeutics. However, it faces many obstacles predominantly instability of siRNAs due to nuclease digestion and subsequently biologically short half-life. Chemical modifications in siRNAs provide means to overcome these shortcomings and improve their stability and potency. Despite enormous utility bioinformatics resource of these chemically modified siRNAs (cm-siRNAs) is lacking. Therefore, we have developed siRNAmod, a specialized databank for chemically modified siRNAs. Currently, our repository contains a total of 4894 chemically modified-siRNA sequences, comprising 128 unique chemical modifications on different positions with various permutations and combinations. It incorporates important information on siRNA sequence, chemical modification, their number and respective position, structure, simplified molecular input line entry system canonical (SMILES), efficacy of modified siRNA, target gene, cell line, experimental methods, reference etc. It is developed and hosted using Linux Apache MySQL PHP (LAMP) software bundle. Standard user-friendly browse, search facility and analysis tools are also integrated. It would assist in understanding the effect of chemical modifications and further development of stable and efficacious siRNAs for research as well as therapeutics. siRNAmod is freely available at: http://crdd.osdd.net/servers/sirnamod.

  17. Tunable Synthesis of SiC/SiO2 Heterojunctions via Temperature Modulation

    Wei Li

    2018-05-01

    Full Text Available A large-scale production of necklace-like SiC/SiO2 heterojunctions was obtained by a molten salt-mediated chemical vapor reaction technique without a metallic catalyst or flowing gas. The effect of the firing temperature on the evolution of the phase composition, microstructure, and morphology of the SiC/SiO2 heterojunctions was studied. The necklace-like SiC/SiO2 nanochains, several centimeters in length, were composed of SiC/SiO2 core-shell chains and amorphous SiO2 beans. The morphologies of the as-prepared products could be tuned by adjusting the firing temperature. In fact, the diameter of the SiO2 beans decreased, whereas the diameter of the SiC fibers and the thickness of the SiO2 shell increased as the temperature increased. The growth mechanism of the necklace-like structure was controlled by the vapor-solid growth procedure and the modulation procedure via a molten salt-mediated chemical vapor reaction process.

  18. Status and prospects for SiC-SiC composite materials development for fusion applications

    Sharafat, S.; Jones, R.H.; Kohyama, A.; Fenici, P.

    1995-01-01

    Silicon carbide (SiC) composites are very attractive for fusion applications because of their low afterheat and low activation characteristics coupled with excellent high temperature properties. These composites are relatively new materials that will require material development as well as evaluation of hermiticity, thermal conductivity, radiation stability, high temperature strength, fatigue, thermal shock, and joining techniques. The radiation stability of SiC-SiC composites is a critical aspect of their application as fusion components and recent results will be reported. Many of the non-fusion specific issues are under evaluation by other ceramic composite development programs, such as the US national continuous fiber ceramic composites.The current development status of various SiC-SiC composites research and development efforts is given. Effect of neutron irradiation on the properties of SiC-SiC composite between 500 and 1200 C are reported. Novel high temperature properties specific to ceramic matrix composite (CMC) materials are discussed. The chemical stability of SiC is reviewed briefly. Ongoing research and development efforts for joining CMC materials including SiC-SiC composites are described. In conclusion, ongoing research and development efforts show extremely promising properties and behavior for SiC-SiC composites for fusion applications. (orig.)

  19. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  20. Addimer diffusions on Si(100)

    Lee, Gun Do; Wang, C. Z.; Lu, Z. Y.; Ho, K. M.

    1999-01-01

    The diffusion pathways along the trough and between the trough and the dimer row on the Si(100) surface are investigated by tight-binding molecular dynamics calculations using the environment dependent tight-binding silicon potential and by ab initio calculations using the Car-Parrinello method. The studies discover new diffusion pathways consisting of rotation of addimer. The calculated energy barrier are in excellent agreement with experiment. The rotational diffusion pathway between the trough and the dimer row is much more energetically favorable than other diffusion pathways by parallel and perpendicular addimer. The new pathway along the trough is nearly same as the energy barrier of the diffusion pathway by dissociation of the addimer

  1. Tunneling magnetoresistance in Si nanowires

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  2. Transformation of sludge Si to nano-Si/SiOx structure by oxygen inward diffusion as precursor for high performance anodes in lithium ion batteries

    Hua, Qiqi; Dai, Dongyang; Zhang, Chengzhi; Han, Fei; Lv, Tiezheng; Li, Xiaoshan; Wang, Shijie; Zhu, Rui; Liao, Haojie; Zhang, Shiguo

    2018-05-01

    Although several Si/C composite structures have been proposed for high-performance lithium-ion batteries (LIBs), they have still suffered from expensive and complex processes of nano-Si production. Herein, a simple, controllable oxygen inward diffusion was utilized to transform Si sludge obtained from the photovoltaic (PV) industry into the nano-Si/SiOx structure as a result of the high diffusion efficiency of O inside Si and high surface area of the sludge. After further process, a yolk/shell Si/C structure was obtained as an anode material for LIBs. This composite demonstrated an excellent cycling stability, with a high reversible capacity (˜ 1250 mAh/g for 500 cycles), by void space originally left by the SiOx accommodate inner Si expansion. We believe this is a rather simple way to convert the waste Si into a valuable nano-Si for LIB applications.

  3. Formation of metallic Si and SiC nanoparticles from SiO2 particles by plasma-induced cathodic discharge electrolysis in chloride melt

    Tokushige, M.; Tsujimura, H.; Nishikiori, T.; Ito, Y.

    2013-01-01

    Silicon nanoparticles are formed from SiO 2 particles by conducting plasma-induced cathodic discharge electrolysis. In a LiCl–KCl melt in which SiO 2 particles were suspended at 450 °C, we obtained Si nanoparticles with diameters around 20 nm. During the electrolysis period, SiO 2 particles are directly reduced by discharge electrons on the surface of the melt just under the discharge, and the deposited Si atom clusters form Si nanoparticles, which leave the surface of the original SiO 2 particle due to free spaces caused by a molar volume difference between SiO 2 and Si. We also found that SiC nanoparticles can be obtained using carbon anode. Based on Faraday's law, the current efficiency for the formation of Si nanoparticles is 70%

  4. SI konkurss / Anna Roomet

    Roomet, Anna

    2006-01-01

    Konkursist, auhinnatseremooniast ja ekspositsioonist Arhitektuuri- ja Disainigaleriis, žürii koosseis. Intervjuu eesti parima noore disaineri preemia SÄSI pälvinud Pavel Sidorenko ning väikese SÄSI saanud Björn Koobi, Ülle Jehe ja Igor Volkoviga

  5. Intranasal delivery of antiviral siRNA.

    Barik, Sailen

    2011-01-01

    Intranasal administration of synthetic siRNA is an effective modality of RNAi delivery for the prevention and therapy of respiratory diseases, including pulmonary infections. Vehicles used for nasal siRNA delivery include established as well as novel reagents, many of which have been recently optimized. In general, they all promote significant uptake of siRNA into the lower respiratory tract, including the lung. When properly designed and optimized, these siRNAs offer significant protection against respiratory viruses such as influenza virus, parainfluenza virus and respiratory syncytial virus (RSV). Nasally administered siRNA remains within the lung and does not access systemic blood flow, as judged by its absence in other major organs such as liver, heart, kidney, and skeletal muscle. Adverse immune reaction is generally not encountered, especially when immunogenic and/or off-target siRNA sequences and toxic vehicles are avoided. In fact, siRNA against RSV has entered Phase II clinical trials in human with promising results. Here, we provide a standardized procedure for using the nose as a specific route for siRNA delivery into the lung of laboratory animals. It should be clear that this simple and efficient system has enormous potential for therapeutics.

  6. Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

    Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Kwok, Hoi-Sing

    2014-01-01

    Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5 cm 2 /Vs, threshold voltage of 2.5 V, subthreshold swing of 0.63 V/decade, and on/off current ratio of 5 × 10 6 . With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiN x /SiO 2 /SiN x /SiO 2 passivation layers are developed. • The source/drain areas are hydrogen-doped by CHF3 plasma. • The devices show good electrical performance and high reliability against bias stress

  7. Back-contacted BaSi

    Vismara, R.; Isabella, O.; Zeman, M.

    2017-01-01

    We present the optical investigation of a novel back-contacted architecture for solar cells based on a thin barium (di)silicide (BaSi2) absorber. First, through the analysis of absorption limits of different semiconducting materials, we show the potential of BaSi2 for

  8. Natural 32Si as environmental tracer

    Morgenstern, U.

    2005-01-01

    There is a pressing need for an effective dating tool to cover the historical past. Cosmogenic 32 Si, with a half-life of ca. 140 years, is ideally suited to provide time information in the range 50-1000 years. Detection of 32 Si is, however, very difficult due to extremely low natural concentrations and isotopic ratios. (author). 2 refs

  9. SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

    Chanadee, Tawat

    2017-11-01

    Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

  10. Low-temperature Au/a-Si wafer bonding

    Jing, Errong; Xiong, Bin; Wang, Yuelin

    2011-01-01

    The Si/SiO 2 /Ti/Au–Au/Ti/a-Si/SiO 2 /Si bonding structure, which can also be used for the bonding of non-silicon material, was investigated for the first time in this paper. The bond quality test showed that the bond yield, bond repeatability and average shear strength are higher for this bonding structure. The interfacial microstructure analysis indicated that the Au-induced crystallization of the amorphous silicon process leads to big Si grains extending across the bond interface and Au filling the other regions of the bond interface, which result into a strong and void-free bond interface. In addition, the Au-induced crystallization reaction leads to a change in the IR images of the bond interface. Therefore, the IR microscope can be used to evaluate and compare the different bond strengths qualitatively. Furthermore, in order to verify the superiority of the bonding structure, the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si (i.e. no Ti/Au layer on the a-Si surface) and Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structures (i.e. Au thermocompression bonding) were also investigated. For the Si/SiO 2 /Ti/Au–a-Si/SiO 2 /Si bonding structure, the poor bond quality is due to the native oxide layer on the a-Si surface, and for the Si/SiO 2 /Ti/Au–Au/Ti/SiO 2 /Si bonding structure, the poor bond quality is caused by the wafer surface roughness which prevents intimate contact and limits the interdiffusion at the bond interface.

  11. Gas-source molecular beam epitaxy of Si(111) on Si(110) substrates by insertion of 3C-SiC(111) interlayer for hybrid orientation technology

    Bantaculo, Rolando, E-mail: rolandobantaculo@yahoo.com; Saitoh, Eiji; Miyamoto, Yu; Handa, Hiroyuki; Suemitsu, Maki

    2011-11-01

    A method to realize a novel hybrid orientations of Si surfaces, Si(111) on Si(110), has been developed by use of a Si(111)/3C-SiC(111)/Si(110) trilayer structure. This technology allows us to use the Si(111) portion for the n-type and the Si(110) portion for the p-type channels, providing a solution to the current drive imbalance between the two channels confronted in Si(100)-based complementary metal oxide semiconductor (CMOS) technology. The central idea is to use a rotated heteroepitaxy of 3C-SiC(111) on Si(110) substrate, which occurs when a 3C-SiC film is grown under certain growth conditions. Monomethylsilane (SiH{sub 3}-CH{sub 3}) gas-source molecular beam epitaxy (GSMBE) is used for this 3C-SiC interlayer formation while disilane (Si{sub 2}H{sub 6}) is used for the top Si(111) layer formation. Though the film quality of the Si epilayer leaves a lot of room for betterment, the present results may suffice to prove its potential as a new technology to be used in the next generation CMOS devices.

  12. Centrifugally cast Zn-27Al-xMg-ySi alloys and their in situ (Mg2Si + Si)/ZA27 composites

    Wang Qudong; Chen Yongjun; Chen Wenzhou; Wei Yinhong; Zhai Chunquan; Ding Wenjiang

    2005-01-01

    Effects of composition, mold temperature, rotating rate and modification on microstructure of centrifugally cast Zn-27Al-xMg-ySi alloys have been investigated. In situ composites of Zn-27Al-6.3Mg-3.7Si and Zn-27Al-9.8Mg-5.2Si alloys were fabricated by centrifugal casting using heated permanent mold. These composites consist of three layers: inner layer segregates lots of blocky primary Mg 2 Si and a litter blocky primary Si, middle layer contains without primary Mg 2 Si and primary Si, outer layer contains primary Mg 2 Si and primary Si. The position, quantity and distribution of primary Mg 2 Si and primary Si in the composites are determined jointly by alloy composition, solidification velocity under the effect of centrifugal force and their floating velocity inward. Na salt modifier can refine grain and primary Mg 2 Si and make primary Mg 2 Si distribute more evenly and make primary Si nodular. For centrifugally cast Zn-27Al-3.2Mg-1.8Si alloy, the microstructures of inner layer, middle layer and outer layer are almost similar, single layer materials without primary Mg 2 Si and primary Si are obtained, and their grain sizes increased with the mold temperature increasing

  13. Diffusion in ordered Fe-Si alloys

    Sepiol, B.; Vogl, G.

    1995-01-01

    The measurement of the diffusional Moessbauer line broadening in single crystalline samples at high temperatures provides microscopic information about atomic jumps. We can separate jumps of iron atoms between the various sublattices of Fe-Si intermetallic alloys (D0 3 structure) and measure their frequencies. The diffusion of iron in Fe-Si samples with Fe concentrations between 75 and 82 at% shows a drastic composition dependence: the jump frequency and the proportion between jumps on Fe sublattices and into antistructure (Si) sublattice positions change greatly. Close to Fe 3 Si stoichiometry iron diffusion is extremely fast and jumps are performed exclusively between the three Fe sublattices. The change in the diffusion process when changing the alloy composition from stoichiometric Fe 3 Si to the iron-rich side is discussed. (orig.)

  14. DLC-Si protective coatings for polycarbonates

    Damasceno J.C.

    2003-01-01

    Full Text Available In this work, a-C:H:Si (DLC-Si films were produced onto crystalline silicon and polycarbonate substrates by the rf-PACVD technique from gaseous mixtures of CH4 + SiH4 and C2H2 + SiH4. The effects of self-bias and gas composition upon mechanical and optical properties of the films were investigated. Micro-hardness, residual stress, surface roughness and refractive index measurements were employed for characterization. By incorporating low concentrations of silicon and by exploring the more favorable conditions for the rf-PACVD deposition technique, highly adherent DLC-Si thin films were produced with reduced internal stresses (lower than 1 GPa, high hardness (around 20 GPa and high deposition rates (up to 10 µm/h. Results that show the technological viability of this material for application as protective coatings for polycarbonates are also discussed.

  15. SiC for microwave power transistors

    Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

    1997-07-16

    The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

  16. Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

    Timofeev, V. A.; Nikiforov, A. I.; Tuktamyshev, A. R.; Mashanov, V. I.; Loshkarev, I. D.; Bloshkin, A. A.; Gutakovskii, A. K.

    2018-04-01

    The GeSiSn, SiSn layer growth mechanisms on Si(100) were investigated and the kinetic diagrams of the morphological GeSiSn, SiSn film states in the temperature range of 150 °C-450 °C at the tin content from 0% to 35% were built. The phase diagram of the superstructural change on the surface of Sn grown on Si(100) in the annealing temperature range of 0 °C-850 °C was established. The specular beam oscillations were first obtained during the SiSn film growth from 150 °C to 300 °C at the Sn content up to 35%. The transmission electron microscopy and x-ray diffractometry data confirm the crystal perfection and the pseudomorphic GeSiSn, SiSn film state, and also the presence of smooth heterointerfaces between GeSiSn or SiSn and Si. The photoluminescence for the multilayer periodic GeSiSn/Si structures in the range of 0.6-0.8 eV was detected. The blue shift with the excitation power increase is observed suggesting the presence of a type II heterostructure. The creation of tensile strained Ge films, which are pseudomorphic to the underlying GeSn layer, is confirmed by the results of the formation and analysis of the reciprocal space map in the x-ray diffractometry. The tensile strain in the Ge films reached the value in the range of 0.86%-1.5%. The GeSn buffer layer growth in the Sn content range from 8% to 12% was studied. The band structure of heterosystems based on pseudomorphic GeSiSn, SiSn and Ge layers was calculated and the valence and conduction band subband position dependences on the Sn content were built. Based on the calculation, the Sn content range in the GeSiSn, SiSn, and GeSn layers, which corresponds to the direct bandgap GeSiSn, SiSn, and Ge material, was obtained.

  17. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  18. Luminescence of solar cells with a-Si:H/c-Si heterojunctions

    Zhigunov, D. M.; Il'in, A. S.; Forsh, P. A.; Bobyl', A. V.; Verbitskii, V. N.; Terukov, E. I.; Kashkarov, P. K.

    2017-05-01

    We have studied the electroluminescence (EL) and photoluminescence (PL) of solar cells containing a-Si:H/c-Si heterojunctions. It is established that both the EL and PL properties of these cells are determined by the radiative recombination of nonequilibrium carriers in crystalline silicon (c-Si). The external EL energy yield (efficiency) of solar cells with a-Si:H/c-Si heterojunctions at room temperature amounts to 2.1% and exceeds the value reached in silicon diode structures. This large EL efficiency can be explained by good passivation of the surface of crystalline silicon and the corresponding increase in lifetime of minority carrier s in these solar cells.

  19. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  20. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  1. First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

    Nagura, Takuya; Kawachi, Shingo; Chokawa, Kenta; Shirakawa, Hiroki; Araidai, Masaaki; Kageshima, Hiroyuki; Endoh, Tetsuo; Shiraishi, Kenji

    2018-04-01

    It is expected that the off-state leakage current of MOSFETs can be reduced by employing vertical body channel MOSFETs (V-MOSFETs). However, in fabricating these devices, the structure of the Si pillars sometimes cannot be maintained during oxidation, since Si atoms sometimes disappear from the Si/oxide interface (Si missing). Thus, in this study, we used first-principles calculations based on the density functional theory, and investigated the Si emission behavior at the various interfaces on the basis of the Si emission model including its atomistic structure and dependence on Si crystal orientation. The results show that the order in which Si atoms are more likely to be emitted during thermal oxidation is (111) > (110) > (310) > (100). Moreover, the emission of Si atoms is enhanced as the compressive strain increases. Therefore, the emission of Si atoms occurs more easily in V-MOSFETs than in planar MOSFETs. To reduce Si missing in V-MOSFETs, oxidation processes that induce less strain, such as wet or pyrogenic oxidation, are necessary.

  2. EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

    GUOGANG XU

    2012-09-01

    Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

  3. Uniform Si nano-dot fabrication using reconstructed structure of Si(110)

    Yano, Masahiro; Uozumi, Yuki; Yasuda, Satoshi; Asaoka, Hidehito

    2018-06-01

    Si nano-dot (ND) formation on Si(110) is observed by means of a scanning tunneling microscope (STM). The initial Si-NDs are Si crystals that are continuous from the substrate and grow during the oxide layer desorption. The NDs fabricated on the flat surface of Si(110)-1 × 1 are surrounded by four types of facets with almost identical appearance probabilities. An increase in the size of the NDs increases the variety of its morphology. In contrast, most Si-NDs fabricated on straight-stepped surface of Si(110)-16 × 2 reconstructed structure are surrounded by only a single type of facet, namely the \\text{Si}(17,15,1)-2 × 1 plane. An appearance probability of the facet in which the base line is along the step of Si(110)-16 × 2 exceeds 75%. This finding provides a fabrication technique of uniformed structural Si-NDs by using the reconstructed structure of Si(110).

  4. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  5. Neutron tolerance of advanced SiC-fiber/CVI-SiC composites

    Katoh, Y.; Kohyama, A.; Snead, L.L.; Hinoki, T.; Hasegawa, A.

    2003-01-01

    Fusion blankets employing a silicon carbide (SiC) fiber-reinforced SiC matrix composite (SiC/SiC composite) as the structural material provide attractive features represented by high cycle efficiency and extremely low induced radioactivity. Recent advancement in processing and utilization techniques and application studies in ceramic gas turbine and advanced transportation systems, SiC/SiC composites are steadily getting matured as industrial materials. Reference SiC/SiC composites for fusion structural applications have been produced by a forced-flow chemical vapor infiltration (FCVI) method using conventional and advanced near-stoichiometric SiC fibers and extensively evaluated primarily in Japan-US collaborative JUPITER program. In this work, effect of neutron irradiation at elevated temperatures on mechanical property of these composites is characterized. Unlike in conventional SiC/SiC composites, practically no property degradation was identified in advanced composites with a thin carbon interphase by a neutron fluence level of approximately 8dpa at 800C. (author)

  6. Time-resolved photoluminescence of SiOx encapsulated Si

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  7. Effects of SiC amount on phase compositions and properties of Ti3SiC2-based composites

    蔡艳芝; 殷小玮; 尹洪峰

    2015-01-01

    The phase compositions and properties of Ti3SiC2-based composites with SiC addition of 5%−30% in mass fraction fabricated by in-situ reaction and hot pressing sintering were studied. SiC addition effectively prevented TiC synthesis but facilitated SiC synthesis. The Ti3SiC2/TiC−SiC composite had better oxidation resistance when SiC added quantity reached 20% but poorer oxidation resistance with SiC addition under 15%than Ti3SiC2/TiC composite at higher temperatures. There were more than half of the original SiC and a few Ti3SiC2 remaining in Ti3SiC2/TiC−SiC with 20% SiC addition, but all constituents in Ti3Si2/TiC composite were oxidized after 12 h in air at 1500 °C. The oxidation scale thickness of TS30, 1505.78μm, was near a half of that of T, 2715μm, at 1500 °C for 20 h. Ti3SiC2/TiC composite had a flexural strength of 474 MPa, which was surpassed by Ti3SiC2/TiC−SiC composites when SiC added amount reached 15%. The strength reached the peak of 518 MPa at 20%SiC added amount.

  8. Investigation on fabrication of SiC/SiC composite as a candidate material for fuel sub-assembly

    Lee, Jae-Kwang; Naganuma, Masayuki; Park, Joon-Soo; Kohyama, Akira

    2005-01-01

    The possibility of SiC/SiC (Silicon carbide fiber reinforced Silicon carbide) composites application for fuel sub-assembly of Fast Breeder Reactor was investigated. To select a raw material of SiC/SiC composites, a few kinds of SiC nano powder was estimated by SEM observation and XRD analysis. Furthermore, SiC monolithic was sintered from them and estimated by flexural test. SiC nano-powder which showed good sinterability, it was used for fabrication of SiC/SiC composites by Hot Pressing method. From the sintering condition of 1800, 1820degC temperature and 15, 20 MPa pressure, SiC/SiC composite was fabricated and then estimated by tensile test. SiC/SiC composite, which made by 1820degC and 20 MPa condition, showed the highest mechanical strength by the monotonic tensile test. SiC/SiC composite, which made by 1800degC and 15 MPa condition, showed a stable fracture behavior at the monotonic and cyclic tensile test. And then, the hoop stress of ideal model of SiC/SiC composites was discussed. It was confirmed that applicability of SiC/SiC composites by Hot Pressing method for fuel sub-assembly structural material. To make it real attractive one, to maintain the reliability and safety as a high temperature structural material, the design and process study on SiC/Sic composites material will be continued. (author)

  9. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  10. Thickness dependent formation and properties of GdSi2/Si(100) interfaces

    Peto, G.; Molnar, G.; Dozsa, L.; Horvath, Z.E.; Horvath, Zs.J.; Zsoldos, E.; Dimitriadis, C.A.; Papadimitriou, L.

    2005-01-01

    Epitaxial and polycrystalline orthorhombic GdSi 2 films were grown on Si(100) substrates by solid phase reaction between Si and Gd films at different thicknesses of the Gd film. The most important property of these GdSi 2 /Si interfaces was defect formation. This was investigated by studying the properties of the Schottky barriers by means of current voltage and capacitance-voltage characteristics, deep level transient spectroscopy by double crystal X-ray diffractometry, and transmission electron microscopy. Epitaxial growth of the silicide layer ensured a relatively low interface defect density (about 10 10 cm -2 ), while the non-epitaxial growth induced defects of a much higher density (about 10 12 cm -2 ). The defects generated during the silicide formation are located within a depth of about 10 nm from the GdSi 2 /Si interface. (orig.)

  11. Structural and electrical evaluation for strained Si/SiGe on insulator

    Wang Dong; Ii, Seiichiro; Ikeda, Ken-ichi; Nakashima, Hideharu; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi

    2006-01-01

    Three strained Si/SiGe on insulator wafers having different Ge fractions were evaluated using dual-metal-oxide-semiconductor (dual-MOS) deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) methods. The interface of SiGe/buried oxide (BOX) shows roughness less than 1 nm by high resolution TEM observation. The interface states densities (D it ) of SiGe/BOX are approximately 1 x 10 12 cm -2 eV -1 , which is approximately one order of magnitude higher than that of Si/BOX in a Si on insulator wafer measured as reference by the same method of dual-MOS DLTS. The high D it of SiGe/BOX is not due to interface roughness but due to Ge atoms. The threading dislocations were also clearly observed by TEM and were analyzed

  12. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  13. Silicon Effects on Properties of Melt Infiltrated SiC/SiC Composites

    Bhatt, Ramakrishna T.; Gyekenyesi, John Z.; Hurst, Janet B.

    2000-01-01

    Silicon effects on tensile and creep properties, and thermal conductivity of Hi-Nicalon SiC/SiC composites have been investigated. The composites consist of 8 layers of 5HS 2-D woven preforms of BN/SiC coated Hi-Nicalon fiber mats and a silicon matrix, or a mixture of silicon matrix and SiC particles. The Hi-Nicalon SiC/silicon and Hi-Nicalon SiC/SiC composites contained about 24 and 13 vol% silicon, respectively. Results indicate residual silicon up to 24 vol% has no significant effect on creep and thermal conductivity, but does decrease the primary elastic modulus and stress corresponding to deviation from linear stress-strain behavior.

  14. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  15. Light emissions from LiNbO sub 3 /SiO sub 2 /Si structures

    Wu, X L; Tang, N; Deng, S S; Bao, X M

    2003-01-01

    LiNbO sub 3 (LN) films with a high degree of (006) texture were deposited on Si-based dense SiO sub 2 layers by pulsed laser deposition. After annealing, the LN/SiO sub 2 /Si structures were revealed to have ultraviolet-, green-, and red-emitting properties related to self-trapped excitons and E' defect pairs in the SiO sub 2 surface, which are induced by the photorefractive effect of the LN films. The emission wavelength can be tuned by introducing different dopants into the LN films. Waveguiding properties of the structures were demonstrated. The results obtained indicate that the LN/SiO sub 2 /Si structures could be expected to have important applications in modern optoelectronic integration. (letter to the editor)

  16. Solid-state 27Al and 29Si NMR investigations on Si-substituted hydrogarnets

    Rivas Mercury, J.M.; Pena, P.; Aza, A.H. de; Turrillas, X.; Sobrados, I.; Sanz, J.

    2007-01-01

    Partially deuterated Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x hydrates prepared by a reaction in the presence of D 2 O of synthetic tricalcium aluminate with different amounts of amorphous silica were characterized by 29 Si and 27 Al magic-angle spinning nuclear magnetic resonance (NMR) spectroscopy. The 29 Si NMR spectroscopy was used for quantifying the non-reacted silica and the resulting hydrated products. The incorporation of Si into Ca 3 Al 2 (SiO 4 ) 3-x (OH) 4x was followed by 27 Al NMR spectroscopy: Si:OH ratios were determined quantitatively from octahedral Al signals ascribed to Al(OH) 6 and Al(OSi)(OH) 5 environments. The NMR data obtained were consistent with the concentrations of the Al and Si species deduced from transmission electron microscopy energy-dispersive spectrometry and Rietveld analysis of both X-ray and neutron diffraction data

  17. Isotopic effects in sub-barrier fusion of Si + Si systems

    Colucci, G.; Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Bourgin, D.; Čolović, P.; Corradi, L.; Faggian, M.; Fioretto, E.; Galtarossa, F.; Goasduff, A.; Grebosz, J.; Haas, F.; Mazzocco, M.; Scarlassara, F.; Stefanini, C.; Strano, E.; Szilner, S.; Urbani, M.; Zhang, G. L.

    2018-04-01

    Background: Recent measurements of fusion cross sections for the 28Si+28Si system revealed a rather unsystematic behavior; i.e., they drop faster near the barrier than at lower energies. This was tentatively attributed to the large oblate deformation of 28Si because coupled-channels (CC) calculations largely underestimate the 28Si+28Si cross sections at low energies, unless a weak imaginary potential is applied, probably simulating the deformation. 30Si has no permanent deformation and its low-energy excitations are of a vibrational nature. Previous measurements of this system reached only 4 mb, which is not sufficient to obtain information on effects that should show up at lower energies. Purpose: The aim of the present experiment was twofold: (i) to clarify the underlying fusion dynamics by measuring the symmetric case 30Si+30Si in an energy range from around the Coulomb barrier to deep sub-barrier energies, and (ii) to compare the results with the behavior of 28Si+28Si involving two deformed nuclei. Methods: 30Si beams from the XTU tandem accelerator of the Laboratori Nazionali di Legnaro of the Istituto Nazionale di Fisica Nucleare were used, bombarding thin metallic 30Si targets (50 μ g /cm2) enriched to 99.64 % in mass 30. An electrostatic beam deflector allowed the detection of fusion evaporation residues (ERs) at very forward angles, and angular distributions of ERs were measured. Results: The excitation function of 30Si+30Si was measured down to the level of a few microbarns. It has a regular shape, at variance with the unusual trend of 28Si+28Si . The extracted logarithmic derivative does not reach the LCS limit at low energies, so that no maximum of the S factor shows up. CC calculations were performed including the low-lying 2+ and 3- excitations. Conclusions: Using a Woods-Saxon potential the experimental cross sections at low energies are overpredicted, and this is a clear sign of hindrance, while the calculations performed with a M3Y + repulsion

  18. Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

    Hartmann, J. M.; Benevent, V.; Barnes, J. P.; Veillerot, M.; Lafond, D.; Damlencourt, J. F.; Morvan, S.; Prévitali, B.; Andrieu, F.; Loubet, N.; Dutartre, D.

    2013-05-01

    We have evaluated various Cyclic Selective Epitaxial Growth/Etch (CSEGE) processes in order to grow "mushroom-free" Si and SiGe:B Raised Sources and Drains (RSDs) on each side of ultra-short gate length Extra-Thin Silicon-On-Insulator (ET-SOI) transistors. The 750 °C, 20 Torr Si CSEGE process we have developed (5 chlorinated growth steps with four HCl etch steps in-between) yielded excellent crystalline quality, typically 18 nm thick Si RSDs. Growth was conformal along the Si3N4 sidewall spacers, without any poly-Si mushrooms on top of unprotected gates. We have then evaluated on blanket 300 mm Si(001) wafers the feasibility of a 650 °C, 20 Torr SiGe:B CSEGE process (5 chlorinated growth steps with four HCl etch steps in-between, as for Si). As expected, the deposited thickness decreased as the total HCl etch time increased. This came hands in hands with unforeseen (i) decrease of the mean Ge concentration (from 30% down to 26%) and (ii) increase of the substitutional B concentration (from 2 × 1020 cm-3 up to 3 × 1020 cm-3). They were due to fluctuations of the Ge concentration and of the atomic B concentration [B] in such layers (drop of the Ge% and increase of [B] at etch step locations). Such blanket layers were a bit rougher than layers grown using a single epitaxy step, but nevertheless of excellent crystalline quality. Transposition of our CSEGE process on patterned ET-SOI wafers did not yield the expected results. HCl etch steps indeed helped in partly or totally removing the poly-SiGe:B mushrooms on top of the gates. This was however at the expense of the crystalline quality and 2D nature of the ˜45 nm thick Si0.7Ge0.3:B recessed sources and drains selectively grown on each side of the imperfectly protected poly-Si gates. The only solution we have so far identified that yields a lesser amount of mushrooms while preserving the quality of the S/D is to increase the HCl flow during growth steps.

  19. Luminescence properties of Si-capped β-FeSi{sub 2} nanodots epitaxially grown on Si(001) and (111) substrates

    Amari, Shogo; Ichikawa, Masakazu [Department of Applied Physics, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan); Nakamura, Yoshiaki, E-mail: nakamura@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan)

    2014-02-28

    We studied the luminescence properties of Si-capped β-FeSi{sub 2} nanodots (NDs) epitaxially grown on Si substrates by using photoluminescence (PL) and electroluminescence (EL) spectroscopies. Codepositing Fe and Si on ultrathin SiO{sub 2} films induced the self-assembly of epitaxial β-FeSi{sub 2} NDs. The PL spectra of the Si/β-FeSi{sub 2} NDs/Si structure depended on the crystal orientation of the Si substrate. These structures exhibited a broad PL peak near 0.8 eV on both Si(001) and (111) substrates. The PL intensity depended on the shape of the β-FeSi{sub 2} NDs. For the flat NDs, which exhibited higher PL intensity, we also recorded EL spectra. We explained the luminescence properties of these structures by the presence of nanostructured Si offering radiative electronic states in the Si cap layers, generated by nano-stressors for upper Si layer: the strain-relaxed β-FeSi{sub 2} NDs.

  20. Experimental and thermodynamic assessments of substitutions in the AlFeSi, FeMnSi, FeSiZr and AlCaFeSi systems (65 wt % Si) - solidification simulation

    Gueneau, C.; Ansara, I.

    1994-01-01

    The substitutions of Al Si, Fe Mn and Fe Zr in some intermetallic compounds of the Al-Fe-Si, Fe-Mn-Si and Fe-Si-Zr systems are modelled in the Si-rich corner using a two sublattice model. The solidification paths of the studied alloys are determined at equilibrium. The ascalculated phase volume fractions of the alloys are compared to the experimental ones. Finally, a solidification simulation using the Gulliver-Scheil's model is performed in order to explain the formation of some precipitates experimentally observed. (authors). 14 figs., 19 refs

  1. Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

    Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

    2013-11-01

    Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

  2. Passivation of defect states in Si and Si/SiO2 interface states by cyanide treatment: improvement of characteristics of pin-junction amorphous Si and crystalline Si-based metal-oxide-semiconductor junction solar cells

    Fujiwara, N.; Fujinaga, T.; Niinobe, D.; Maida, O.; Takahashi, M.; Kobayashi, H.

    2003-01-01

    Defect states in Si can be passivated by cyanide treatment which simply involves immersion of Si materials in KCN solutions, followed by rinse. When the cyanide treatment is applied to pin-junction amorphous Si [a-Si] solar cells, the initial conversion efficiency increases. When the crown-ether cyanide treatment using a KCN solution of xylene containing 18-crown-6 is performed on i-a-Si films, decreases in the photo- and dark current densities with the irradiation time are prevented. The cyanide treatment can also passivate interface states present at Si/SiO 2 interfaces, leading to an increase in the conversion efficiency of 2 / Si (100)> solar cells.. Si-CN bonds formed by the reaction of defect states with cyanide ions have a high bond energy of about 4.5 eV and hence heat treatment at 800 0 C does not rupture the bonds, making thermal stability of the cyanide treatment.. When the cyanide treatment is applied to ultrathin SiO 2 /Si structure, the leakage current density is markedly decreased (Authors)

  3. Si Wire-Array Solar Cells

    Boettcher, Shannon

    2010-03-01

    Micron-scale Si wire arrays are three-dimensional photovoltaic absorbers that enable orthogonalization of light absorption and carrier collection and hence allow for the utilization of relatively impure Si in efficient solar cell designs. The wire arrays are grown by a vapor-liquid-solid-catalyzed process on a crystalline (111) Si wafer lithographically patterned with an array of metal catalyst particles. Following growth, such arrays can be embedded in polymethyldisiloxane (PDMS) and then peeled from the template growth substrate. The result is an unusual photovoltaic material: a flexible, bendable, wafer-thickness crystalline Si absorber. In this paper I will describe: 1. the growth of high-quality Si wires with controllable doping and the evaluation of their photovoltaic energy-conversion performance using a test electrolyte that forms a rectifying conformal semiconductor-liquid contact 2. the observation of enhanced absorption in wire arrays exceeding the conventional light trapping limits for planar Si cells of equivalent material thickness and 3. single-wire and large-area solid-state Si wire-array solar cell results obtained to date with directions for future cell designs based on optical and device physics. In collaboration with Michael Kelzenberg, Morgan Putnam, Joshua Spurgeon, Daniel Turner-Evans, Emily Warren, Nathan Lewis, and Harry Atwater, California Institute of Technology.

  4. Joining SiC/SiC composites for fusion applications

    Henager, C.J.

    2007-01-01

    Full text of publication follows: The use of SiC-reinforced composites for fusion reactors or other nuclear applications will likely require some form of joining in order to form large structural or functional sections. Joints must be able to allow load transfer to the composite material so that the fiber reinforcements are able to carry their designed loads and the joint should not fail in a brittle manner. In addition, joints must be tolerant of radiation damage similar to the composite material to maintain the structural integrity of the joined section. Other requirements of interest are low activation joints and ease of joining application and processing, which are a difficult set of criteria to meet. Research at PNNL has been directed at high-strength joints using solid-state displacement reactions and pre-ceramic polymer joints that are easy to apply and that could be used in field repair situations. This research will report on the further development and testing of such joints using a double notch shear (DNS) specimen that is suitable for in-reactor testing. The results reveal that the solid-state joints are stronger than the polymer-based joints but require high-temperature, high-pressure processing. The polymer-based joints can be applied with reduced pressure and temperature processing compared to the solid-state joints. The polymer-based joints may have adequate strength for some applications where ease of application and in situ processing are required. Although irradiation testing is not reported in this study the use of the DNS specimen is discussed with regard to future neutron irradiations. (authors)

  5. Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture

    Imamura, Kentaro; Nonaka, Takaaki; Onitsuka, Yuya; Irishika, Daichi; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • Ultralow reflectivity Si wafers with light trapping effect can be obtained by forming a nanocrystalline Si layer on pyramidal textured Si surfaces. • Surface passivation using phosphosilicate glass improved minority carrier lifetime of the nanocrystalline Si layer/Si structure. • A high photocurrent density of 40.1 mA/cm{sup 2}, and a high conversion efficiency of 18.5% were achieved. - Abstract: The surface structure chemical transfer (SSCT) method has been applied to fabrication of single crystalline Si solar cells with 170 μm thickness. The SSCT method, which simply involves immersion of Si wafers in H{sub 2}O{sub 2} plus HF solutions and contact of Pt catalyst with Si taking only ∼30 s for 6 in. wafers, can decrease the reflectivity to less than 3% by the formation of a nanocrystalline Si layer. However, the reflectivity of the nanocrystalline Si layer/flat Si surface/rear Ag electrode structure in the wavelength region longer than 1000 nm is high because of insufficient absorption of incident light. The reflectivity in the long wavelength region is greatly decreased by the formation of the nanocrystalline Si layer on pyramidal textured Si surfaces due to an increase in the optical path length. Deposition of phosphosilicate glass (PSG) on the nanocrystalline Si layer for formation of pn-junction does not change the ultralow reflectivity because the surface region of the nanocrystalline Si layer possesses a refractive index of 1.4 which is nearly the same as that of PSG of 1.4–1.5. The PSG layer is found to passivate the nanocrystalline Si layer, which is evident from an increase in the minority carrier lifetime from 12 to 44 μs. Hydrogen treatment at 450 °C further increases the minority carrier lifetime approximately to a doubled value. The solar cells with the Si layer/pyramidal Si substrate/boron-diffused back surface field/Ag rear electrode> structure show a high conversion efficiency of 18

  6. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Shimoda, K.; Park, J.S.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  7. Microstructural optimization of high temperature SiC/SiC composites by nite process

    Shimoda, K. [Kyoto Univ., Graduate School of Energy Science (Japan); Park, J.S. [Kyoto Univ., Institute of Advanced Energy (Japan); Hinoki, T.; Kohyama, A. [Kyoto Univ., lnstitute of Advanced Energy, Gokasho, Uji (Japan)

    2007-07-01

    Full text of publication follows: SiC/SiC composites are one of the promising structural materials for future fusion reactor because of the excellent potentiality in thermal and mechanical properties under very severe environment including high temperature and high energy neutron bombardment. For fusion-grade SiC/SiC composites, high-crystallinity and near-stoichiometric characteristic are required to keep excellent stability against neutron irradiation. The realization of the reactor will be strongly depend on optimization of SiC/SiC composites microstructure, particularly in regard to the materials and processes used for the fiber, interphase and matrix constituents. One of the important accomplishments is the new process, called nano-particle infiltration and transient eutectic phase (NITE) process developed in our group. The microstructure of NITE-SiC/SiC composites, such as fiber volume fraction, porosity and type of pores, can be controlled precisely by the selection of sintering temperature/applied stress history. The objective of this study is to investigate thermal stability and mechanical properties of NITE-SiC/SiC composites at high-temperature. Two kinds of highly-densified SiC/SiC composites with the difference of fiber volume fraction were prepared, and were subjected to exposure tests from 1000 deg. C to 1500 deg. C in an argon-oxygen gas mixture with an oxygen partial pressure of 0.1 Pa. The thermal stability of the composites was characterized through mass change and TEM/SEM observation. The in-situ tensile tests at 1300 deg. C and 1500 deg. C were carried out in the same atmosphere. Most of SiC/SiC composites, even for the advanced CVI-SiC/SiC composites with multi-layered SiC/C inter-phases, underwent reduction in the maximum strength by about 20% at 1300 deg. C. In particular, this reduction was attributed to a slight burnout of the carbon interphase due to oxygen impurities in test atmosphere. However, there was no significant degradation for

  8. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  9. Characterization of SiCf/SiC and CNT/SiC composite materials produced by liquid phase sintering

    Lee, J.K.; Lee, S.P.; Cho, K.S.; Byun, J.H.; Bae, D.S.

    2011-01-01

    This paper dealt with the microstructure and mechanical properties of SiC based composites reinforced with different reinforcing materials. The composites were fabricated using reinforcing materials of carbon nanotubes (CNT) and Tyranno Lox-M SiC chopped fibers. The volume fraction of carbon nanotubes was also varied in this composite system. An Al 2 O 3 -Y 2 O 3 powder mixture was used as a sintering additive in the consolidation of the SiC matrix. The characterization of the composites was investigated by means of SEM and three point bending tests. These composites showed a dense morphology of the matrix region, by the creation of a secondary phase. The composites reinforced with SiC chopped fibers possessed a flexural strength of about 400 MPa at room temperature. The flexural strength of the carbon nanotubes composites had a tendency to decrease with increased volume fraction of the reinforcing material.

  10. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures, Phase II

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  11. Narrow photoluminescence peak from Ge(Si) islands embedded between tensile-strained Si layers

    Shaleev, Mikhail; Novikov, Alexey; Baydakova, Nataliya; Yablonskiy, Artem; Drozdov, Yuriy; Lobanov, Dmitriy; Krasilnik, Zakhary [Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation); Kuznetsov, Oleg [Physical-Technical Research Institute, Nizhny Novgorod State University, pr. Gagarina 23, 603950 Nizhny Novgorod (Russian Federation)

    2011-03-15

    The influence of thickness of the strained Si layers, measurement temperature and optical pumping power on width of the photoluminescence line from Ge(Si) self-assembled nanoislands grown on relaxed SiGe/Si(001) buffer layers and embedded between tensile-stained Si layers was studied. This line appears due to the II-type optical transition between the holes localized in islands and the electrons confined in tensile-strained Si layers under and above the islands. The possibility of tuning the photoluminescence line width by changing the strained Si layer thicknesses under and above the islands is showed. The decrease of the photoluminescence line width from Ge(Si) islands down to values comparable with width of the PL line from InAs/GaAs quantum dots was achieved due to the quantum confinement of electrons in thin strained Si layers and taking into account of the higher diffusion-induced smearing of strained Si layer above the islands. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Control of the graphene growth rate on capped SiC surface under strong Si confinement

    Çelebi, C.; Yanık, C.; Demirkol, A.G.; Kaya, İsmet İ.

    2013-01-01

    Highlights: ► Graphene is grown on capped SiC surface with well defined cavity size. ► Graphene growth rate linearly increases with the cavity height. ► Graphene uniformity is reduced with thickness. - Abstract: The effect of the degree of Si confinement on the thickness and morphology of UHV grown epitaxial graphene on (0 0 0 −1) SiC is investigated by using atomic force microscopy and Raman spectroscopy measurements. Prior to the graphene growth process, the C-face surface of a SiC substrate is capped by another SiC comprising three cavities on its Si-rich surface with depths varying from 0.5 to 2 microns. The Si atoms, thermally decomposed from the sample surface during high temperature annealing of the SiC cap /SiC sample stack, are separately trapped inside these individual cavities at the sample/cap interface. Our analyses show that the growth rate linearly increases with the cavity height. It was also found that stronger Si confinement yields more uniform graphene layers.

  13. The Degradation Behavior of SiCf/SiO2 Composites in High-Temperature Environment

    Yang, Xiang; Cao, Feng; Qing, Wang; Peng, Zhi-hang; Wang, Yi

    2018-04-01

    SiCf/SiO2 composites had been fabricated efficiently by Sol-Gel method. The oxidation behavior, thermal shock property and ablation behavior of SiCf/SiO2 composites was investigated. SiCf/SiO2 composites showed higher oxidation resistance in oxidation atmosphere, the flexural strength retention ratio was larger than 90.00%. After 1300 °C thermal shock, the mass retention ratio was 97.00%, and the flexural strength retention ratio was 92.60%, while after 1500 °C thermal shock, the mass retention ratio was 95.37%, and the flexural strength retention ratio was 83.34%. After 15 s ablation, the mass loss rate was 0.049 g/s and recession loss rate was 0.067 mm/s. The SiO2 matrix was melted in priority and becomes loosen and porous. With the ablation going on, the oxides were washed away by the shearing action of the oxyacetylene flame. The evaporation of SiO2 took away large amount of heat, which is also beneficial to the protection for SiCf/SiO2 composites.

  14. Studies on Kondo insulating FeSi

    Bharathi, A.; Mani, Awadhesh; Ravindran, Nithya; Mathi Jaya, S.; Sundar, C.S.; Hariharan, Y.

    2000-01-01

    Temperature dependent electrical resistivity measurements have been carried out in Fe (1-x) Ru x Si and FeSi (1-x) Ge x to examine the robustness of the Kondo Insulating gap to substitution in the Fe and Si sublattices. The gap is seen to decrease with Ge substitution, while for Ru substitution the gap shows an initial decrease followed by an increase at higher concentration. The results can be understood in terms of the shift in the mobility edge due to disorder and/or pressure effects in combination with changes in band structure

  15. Properties of tribology for Si implanted PET

    Wu Yuguang; Zhang Tonghe; Zhang Xu; Liu Andong; Xie Mengxia; Zhang Aimin; Chen Jianmin

    2002-01-01

    Polyethylene terephthalate (PET) has been modified with Si ions from a metal vapor arc source (MEVVA). After implantation, the surface structure has been greatly changed. The experimental results of infrared absorption indicated that the particles are referred to rich carbon and SiC particles. The PET has been strengthened by these dispersed particles. The measurement results using nanometer hardness tester reveal that both surface hardness and modulus increase obviously. Therefore the surface wear resistance improved extremely. Finally the modification mechanism of Si implanted PET was discussed

  16. Avaliação do índice de temperatura de globo negro e umidade e desempenho de suínos nas fases de crescimento e terminação criados em sistemas em camas sobrepostas em condições de verão Evaluation of index of temperature of black globe and humidity and behavior of swine in the growth and termination phases reared on beds in summer conditions

    Ilda de Fátima Ferreira Tinôco

    2007-10-01

    Full Text Available Um estudo foi realizado com o objetivo de avaliar o sistema de criação em camas sobrepostas de maravalha e de casca de arroz, em comparação ao piso tradicional de concreto e sua influência no desempenho dos animais com base no ITGU (Índice de Temperatura de Globo negro e Umidade, no ganho de peso, no consumo de ração, na conversão alimentar e no consumo de água de suínos durante as fases de crescimento e terminação. Foram utilizados 216 animais (Landrace ´ Large White divididos em 12 lotes uniformes, cada um com 18 animais, abrigados em 12 baias independentes, de modo que cada conjunto de quatro baias foi mantido em sistema de criação diferenciado. O experimento foi conduzido em blocos inteiramente casualizados com quatro repetições por sistema de criação. Verificou-se discreta vantagem do piso de concreto quanto ao ganho de peso, ao consumo de ração, à conversão alimentar e ao consumo de água. Portanto, o desempenho zootécnico não foi influenciado pelos sistemas de criação, embora os animais mantidos no piso de concreto tenham apresentado resultados ligeiramente melhores que os alojados em cama sobreposta. As camas constituem opção satisfatória para economia total de água de limpeza de pisos de concreto e para se evitar o lançamento de águas residuárias nos cursos d'água.A study was carried out with the objectives to evaluate the raising system deep-bedding (wood shavings and rice husk, in comparison to the traditional concrete floor in the raising of swine during the growth and finishing phases and to evaluate the animal performance based on BGTHI (Black Globe Temperature and Humidity Index, in the weight gain, ration intake, feed conversion and the water consumption. A total of 216 animals (Landrace ´ Large White was used, divided in 12 uniform lots, each one with 18 animals, sheltered in 12 independent pens, in way that each set of four pens was kept in differentiated raising system. The experiment was

  17. Implantation of P ions in SiO{sub 2} layers with embedded Si nanocrystals

    Kachurin, G.A. E-mail: kachurin@isp.nsc.ru; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I

    2004-08-01

    The effect of 10{sup 13}-10{sup 16} cm{sup -2} P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO{sub 2} layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10{sup 14} cm{sup -2}, thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs.

  18. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  19. Reduced Pressure-Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics

    Hartmann, J.M.; Andrieu, F.; Lafond, D.; Ernst, T.; Bogumilowicz, Y.; Delaye, V.; Weber, O.; Rouchon, D.; Papon, A.M.; Cherkashin, N.

    2008-01-01

    We have first of all quantified the impact of pressure on Si and SiGe growth kinetics. Definite growth rate and Ge concentration increases with the pressure have been evidenced at low temperatures (650-750 deg. C). By contrast, the high temperature (950-1050 deg. C) Si growth rate either increases or decreases with pressure (gaseous precursor depending). We have then described the selective epitaxial growth process we use to form Si or Si 0.7 Ge 0.3 :B raised sources and drains on ultra-thin patterned Silicon-On-Insulator (SOI) substrates. We have afterwards presented the specifics of SiGe virtual substrates and of the tensile-strained Si layers grown on top (used as templates for the elaboration of tensily strained-SOI wafers). The tensile strain, which can be tailored from 1.3 up to 3 GPa, leads to an electron mobility gain by a factor of 2 in n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) built on top. High Ge content SiGe virtual substrates can also be used for the elaboration of compressively strained Ge channels, with impressive hole mobility gains (x9) compared to bulk Si. After that, we have described the main structural features of thick Ge layers grown directly on Si (that can be used as donor wafers for the elaboration of GeOI wafers or as the active medium of near infrared photo-detectors). Finally, we have shown how Si/SiGe multilayers can be used for the formation of high performance 3D devices such as multi-bridge channel or nano-beam gate-all-around FETs, the SiGe sacrificial layers being removed thanks to plasma dry etching, wet etching or in situ gaseous HCl etching

  20. Si cycling in a forest biogeosystem - the importance of transient state biogenic Si pools

    Sommer, M.; Jochheim, H.; Höhn, A.; Breuer, J.; Zagorski, Z.; Busse, J.; Barkusky, D.; Meier, K.; Puppe, D.; Wanner, M.; Kaczorek, D.

    2013-07-01

    The relevance of biological Si cycling for dissolved silica (DSi) export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi) might contribute > 50% to DSi (Gerard et al., 2008). However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%). Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007-04/2011), we quantified (i) internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr) by BIOME-BGC (version ZALF), (ii) related Si budgets, and (iii) Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae). We quantified an average Si plant uptake of 35 kg Si ha-1 yr-1 - most of which is recycled to the soil by litterfall - and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha-1. The comparatively high DSi concentrations (6 mg L-1) and DSi exports (12 kg Si ha-1 yr-1) could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  1. Si cycling in a forest biogeosystem – the importance of transient state biogenic Si pools

    M. Sommer

    2013-07-01

    Full Text Available The relevance of biological Si cycling for dissolved silica (DSi export from terrestrial biogeosystems is still in debate. Even in systems showing a high content of weatherable minerals, like Cambisols on volcanic tuff, biogenic Si (BSi might contribute > 50% to DSi (Gerard et al., 2008. However, the number of biogeosystem studies is rather limited for generalized conclusions. To cover one end of controlling factors on DSi, i.e., weatherable minerals content, we studied a forested site with absolute quartz dominance (> 95%. Here we hypothesise minimal effects of chemical weathering of silicates on DSi. During a four year observation period (05/2007–04/2011, we quantified (i internal and external Si fluxes of a temperate-humid biogeosystem (beech, 120 yr by BIOME-BGC (version ZALF, (ii related Si budgets, and (iii Si pools in soil and beech, chemically as well as by SEM-EDX. For the first time two compartments of biogenic Si in soils were analysed, i.e., phytogenic and zoogenic Si pool (testate amoebae. We quantified an average Si plant uptake of 35 kg Si ha−1 yr−1 – most of which is recycled to the soil by litterfall – and calculated an annual biosilicification from idiosomic testate amoebae of 17 kg Si ha−1. The comparatively high DSi concentrations (6 mg L−1 and DSi exports (12 kg Si ha−1 yr−1 could not be explained by chemical weathering of feldspars or quartz dissolution. Instead, dissolution of a relictic, phytogenic Si pool seems to be the main process for the DSi observed. We identified canopy closure accompanied by a disappearance of grasses as well as the selective extraction of pine trees 30 yr ago as the most probable control for the phenomena observed. From our results we concluded the biogeosystem to be in a transient state in terms of Si cycling.

  2. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  3. Chemical vapor deposition of Si/SiC nano-multilayer thin films

    Weber, A.; Remfort, R.; Woehrl, N.; Assenmacher, W.; Schulz, S.

    2015-01-01

    Stoichiometric SiC films were deposited with the commercially available single source precursor Et_3SiH by classical thermal chemical vapor deposition (CVD) as well as plasma-enhanced CVD at low temperatures in the absence of any other reactive gases. Temperature-variable deposition studies revealed that polycrystalline films containing different SiC polytypes with a Si to carbon ratio of close to 1:1 are formed at 1000 °C in thermal CVD process and below 100 °C in the plasma-enhanced CVD process. The plasma enhanced CVD process enables the reduction of residual stress in the deposited films and offers the deposition on temperature sensitive substrates in the future. In both deposition processes the film thickness can be controlled by variation of the process parameters such as the substrate temperature and the deposition time. The resulting material films were characterized with respect to their chemical composition and their crystallinity using scanning electron microscope, energy dispersive X-ray spectroscopy (XRD), atomic force microscopy, X-ray diffraction, grazing incidence X-ray diffraction, secondary ion mass spectrometry and Raman spectroscopy. Finally, Si/SiC multilayers of up to 10 individual layers of equal thickness (about 450 nm) were deposited at 1000 °C using Et_3SiH and SiH_4. The resulting multilayers features amorphous SiC films alternating with Si films, which feature larger crystals up to 300 nm size as measured by transmission electron microscopy as well as by XRD. XRD features three distinct peaks for Si(111), Si(220) and Si(311). - Highlights: • Stoichiometric silicon carbide films were deposited from a single source precursor. • Thermal as well as plasma-enhanced chemical vapor deposition was used. • Films morphology, crystallinity and chemical composition were characterized. • Silicon/silicon carbide multilayers of up to 10 individual nano-layers were deposited.

  4. Applying precision feeding techniques in growing-finishing pig operations Técnicas de alimentação de precisão em operações de suínos em crescimento-terminação

    Cândido Pomar

    2009-07-01

    ênio e fósforo. Além disso, a integração de técnicas de alimentação precisa em sistemas de produção de grande porte permite o monitoramento em tempo real do alimento e do animal quando se trata de atingir ótimas condições de abate e estratégias de produção, melhorando assim a sustentabilidade da produção suína, bem estar animal e qualidade da carne.

  5. Alpha-particle irradiation induced defects in SiO2 films of Si-SiO2 structures

    Koman, B.P.; Gal'chynskyy, O.V.; Kovalyuk, R.O.; Shkol'nyy, A.K.

    1996-01-01

    The aim of the work was to investigate alpha-particle irradiation induced defects in Si-SiO 2 structures by means of the thermostimulated discharge currents (TSDC) analysis. The object of investigation were (p-Si)-SiO 2 structures formed by a combined oxidation of the industrial p-Si wafers in dry and wet oxygen at temperature of 1150 C. The TSD currents were investigated in the temperature range between 90 and 500 K under linear heating rate. Pu 238 isotopes were the source of alpha-particles with an energy of 4-5 MeV and a density of 5.10 7 s -1 cm -2 . The TSD current curves show two peculiar maxima at about 370 and 480 K. Alpha-particle irradiation doesn't affect the general shape of the TSDC curves but leads to a shift of the maximum at 370 K and reduces the total electret charge which is accumulated in the Si-SiO 2 structures during polarization. The energy distribution function of the defects which are involved in SiO 2 polarization has been calculated. It showes that defects with activation energies of about 0.8 and 1.0 eV take part in forming the electret state, and these activation energies have certain energy distributions. It has been found that the TSDC maximum at 370 K has space charge nature and is caused by migration of hydrogen ions. In irradiated samples hydrogen and natrium ions localize on deeper trapping centres induced by alpha-particle irradiation. (orig.)

  6. C/SiC/MoSi2-Si multilayer coatings for carbon/carbon composites for protection against oxidation

    Zhang Yulei; Li Hejun; Qiang Xinfa; Li Kezhi; Zhang Shouyang

    2011-01-01

    Highlights: → A C/SiC/MoSi 2 -Si multilayer coating was prepared on C/C by slurry and pack cementation. → Multilayer coating can protect C/C for 300 h at 1873 K or 103 h at 1873 K in air. → The penetration cracks in the coating result in the weight loss of the coated C/C. → The fracture of the coated C/C in wind tunnel result from the excessive local stress. - Abstract: To improve the oxidation resistance of carbon/carbon (C/C) composites, a C/SiC/MoSi 2 -Si multilayer oxidation protective coating was prepared by slurry and pack cementation. The microstructure of the as-prepared coating was characterized by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The isothermal oxidation and erosion resistance of the coating was investigated in electrical furnace and high temperature wind tunnel. The results showed that the multilayer coating could effectively protect C/C composites from oxidation in air for 300 h at 1773 K and 103 h at 1873 K, and the coated samples was fractured after erosion for 27 h at 1873 K h in wind tunnel. The weight loss of the coated specimens was considered to be caused by the formation of penetration cracks in the coating. The fracture of the coated C/C composites might result from the excessive local stress in the coating.

  7. Removal of C and SiC from Si and FeSi during ladle refining and solidification

    Klevan, Ole Svein

    1997-12-31

    The utilization of solar energy by means of solar cells requires the Si to be very pure. The purity of Si is important for other applications as well. This thesis mainly studies the total removal of carbon from silicon and ferrosilicon. The decarburization includes removal of SiC particles by stirring and during casting in addition to reduction of dissolved carbon by gas purging. It was found that for three commercial qualities of FeSi75, Refined, Gransil, and Standard lumpy, the refined quality is lowest in carbon, followed by Gransil and Standard. A decarburization model was developed that shows the carbon removal by oxidation of dissolved carbon to be a slow process at atmospheric pressure. Gas stirring experiments have shown that silicon carbide particles are removed by transfer to the ladle wall. The casting method of ferrosilicon has a strong influence on the final total carbon content in the commercial alloy. Shipped refined FeSi contains about 100 ppm total carbon, while the molten alloy contains roughly 200 ppm. The total carbon out of the FeSi-furnace is about 1000 ppm. It is suggested that low values of carbon could be obtained on an industrial scale by injection of silica combined with the use of vacuum. Also, the casting system could be designed to give low carbon in part of the product. 122 refs., 50 figs., 24 tabs.

  8. RBS characterization of the deposition of very thin SiGe/SiO2 multilayers by LPCVD

    Munoz-Martin, A.; Climent-Font, A.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.

    2005-01-01

    Multilayer structures consisting of several alternated layers of SiGe and SiO 2 with thickness ranging from 2 or Si as well as the deposition of SiO 2 on Si show negligible incubation times. The deposition of SiO 2 on SiGe, however, exhibits an incubation time of several minutes, which would be related to the oxidation of the surface necessary for the SiO 2 deposition to start. In all cases the film thickness increases linearly with deposition time, thus allowing the growth rates to be determined. These data allow the deposition process of these very thin layers to be accurately controlled

  9. Study of two-dimensional hole gas at Si/SiGe/Si inverted interface

    Sadeghazdeh, M.A.; Mironov, O.A.; Parry, C.P.; Philips, P.J.; Parker, E.H.C.; Wahll, T.E.; Emeleus, C.J.

    1998-01-01

    We have studied the transport of two-dimensional hole gas (2DHG) at the inverted interface of a strained Si 0.8 Ge 0.2 quantum well. By application of bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n s can be controlled, in the range of (1.5-5.2)x10 11 cm -2 . At temperature T = 033 K, the Hall mobility is 4650 cm 2 V -1 s -1 at the maximum carrier density. For lower sheet densities (n s 11 cm -2 ) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m* = (0.25 → 0.28)m o and the ratio of transport to quantum lifetimes α = (0.92 → 0.85) for the corresponding carrier density change of n s = (5.2 → 2.5)x10 11 cm -2 . These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n s , short range interface roughness scattering. (author)

  10. The Effect of Si Morphology on Machinability of Al-Si Alloys

    Muhammet Uludağ

    2015-12-01

    Full Text Available Many of the cast parts require some sort of machining like milling, drilling to be used as a finished product. In order to improve the wear properties of Al alloys, Si is added. The solubility of Si in Al is quite low and it has a crystallite type structure. It behaves as particulate metal matrix composite which makes it an attractive element. Thus, the wear and machinability properties of these type of alloys depend on the morphology of Si in the matrix. In this work, Sr was added to alter the morphology of Si in Al-7Si and Al-12Si. Cylindrical shaped samples were cast and machinability characteristics of Sr addition was studied. The relationship between microstructure and machinability was evaluated.

  11. SiC/SiC fuel cladding R and D Project 'SCARLET': Status and future plan

    Kishimoto, Hirotatsu; Kohyama, Akira

    2015-01-01

    This paper provides the recent progress in SiC/SiC development towards early utilisation for LWRs based on NITE method. After the March 11 Disaster in East-Japan, ensuring safe technology for LWR became a top priority R and D in nuclear energy policy of Japan. Along this line, replacement of Zircaloy claddings with SiC/SiC based fuel cladding is becoming one of the most attractive options and a MEXT fund based project, SCARLET, and a METI fund based project have been launched as 5-year termed projects at Muroran Institute of Technology. These projects care for NITE process for making long SiC/SiC fuel pins and connecting technology integration. The SCARLET project also includes coolant compatibility and irradiation effect evaluations as LWR and LMFBR materials. The outline and the present status of the SCARLET project will be briefly introduced in the present paper. (authors)

  12. Si/SiC heterojunction optically controlled transistor with charge compensation layer

    Pu Hongbin

    2016-01-01

    Full Text Available A novel n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has been studied in the paper. The performance of the device is simulated using Silvaco Atlas tools, which indicates excellent performances of the device in both blocking state and conducting state. The device also has a good switching characteristic with 0.54μs as rising time and 0.66μs as falling time. With the charge compensation layer, the breakdown voltage and the spectral response intensity of the device are improved by 90V and 33A/W respectively. Compared with optically controlled transistor without charge compensation layer, the n-SiC/p-Si/n-Si optically controlled transistor with charge compensation layer has a better performance.

  13. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  14. Structure and chemistry of passivated SiC/SiO{sub 2} interfaces

    Houston Dycus, J.; Xu, Weizong; LeBeau, James M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States); Lichtenwalner, Daniel J.; Hull, Brett; Palmour, John W. [Power Devices R& D, Wolfspeed, A Cree Company, Research Triangle Park, North Carolina 27709 (United States)

    2016-05-16

    Here, we report on the chemistry and structure of 4H-SiC/SiO{sub 2} interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO{sub 2} interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility.

  15. The structure modification of Si-SiO2 irradiated by Fe+ ion

    Jin Tao; Ma Zhongquan; Guo Qi

    1992-01-01

    The effect of the iron ion implantation on the oxide surface and SiO 2 -Si interface of MOS structure was studied by X-ray photo-electron spectroscopy (XPS), and the chemical states of compounds formed were examined. The results obtained show that in the surface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface layers of SiO 2 the pure Si micro-regions are formed under the implantation and the interface thickness is almost doubled that leads to failure of MOS capacitors. The physical and chemical mechanisms of MOS structure change by Fe + ion implantation are also discussed and analyzed

  16. SiC Discrete Power Devices

    Baliga, B

    2000-01-01

    .... The investigation of the poor performance of the 4H-SiC ACCUFETs provided insights for changes in device design and process flow, for improving their breakdown voltage and specific on-resistance...

  17. Mass and QEC value of 26Si

    Eronen, T.; Elomaa, V.-V.; Hager, U.; Hakala, J.; Jokinen, A.; Kankainen, A.; Kessler, T.; Moore, I. D.; Rahaman, S.; Rissanen, J.; Weber, C.; Aeystoe, J.

    2009-01-01

    The Q EC value of the superallowed β emitter 26 Si has been measured with the JYFLTRAP Penning trap facility to be 4840.85(10) keV which is ten times more precise than any previous measurement. This leaves only the branching ratio to be improved before the Ft value of 26 Si can be used to test the conserved vector current hypothesis. As a consequence, the 25 Al(p,γ) 26 Si reaction Q-value (Q pγ ) was improved to be 5513.7(5) keV, limited now by the mass excess of 25 Al. The new Q pγ value changes the stellar production rate of 26 Si in nova ignition temperatures by about 10%

  18. Ternary alloying study of MoSi2

    Yi, D.; Li, C.; Akselsen, O.M.; Ulvensoen, J.H.

    1998-01-01

    Ternary alloying of MoSi 2 with adding a series of transition elements was investigated by X-ray diffraction (XRD), scanning electron microscopy, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Iron, Co, Ni, Cr, V, Ti, and Nb were chosen as alloying elements according to the AB 2 structure map or the atomic size factor. The studied MoSi 2 base alloys were prepared by the arc melting process from high-purity metals. The EDS analysis showed that Fe, Co, and Ni have no solid solubility in as-cast MoSi 2 , while Cr, V, Ti, and Nb exhibit limited solid solubilities, which were determined to be 1.4 ± 0.7, 1.4 ± 0.4, 0.4 ± 0.1, and 0.8 ± 0.1. Microstructural characterization indicated that Mo-Si-M VIII (M VIII = Fe, Co, Ni) and Mo-Si-Cr alloys have a two-phase as-cast microstructure, i.e., MoSi 2 matrix and the second-phase FeSi 2 , CoSi, NiSi 2 , and CrSi 2 , respectively. In as-cast Mo-Si-V, Mo-Si-Ti, and Mo-Si-Nb alloys, besides MoSi 2 and C40 phases, the third phases were observed, which have been identified to be (Mo, V) 5 Si 3 , TiSi 2 , and (Mo, Nb) 5 Si 3

  19. Si-Sb-Te materials for phase change memory applications

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  20. RBS using {sup 28}Si beams

    Ophel, T.R. [Australian National Univ., Canberra, ACT (Australia); Mitchell, I.V. [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1996-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  1. RBS using {sup 28}Si beams

    Ophel, T R [Australian National Univ., Canberra, ACT (Australia); Mitchell, I V [University of Western Ontario, London, ON (Canada). Dept. of Physics

    1997-12-31

    Measurements of RBS using {sup 28}Si beams have been made to evaluate the enhancement of sensitivity that should obtain from kinematic suppression of silicon substrate scattering. Two detection methods were tried. Aside from a surface barrier detector, a magnetic spectrometer, instrumented with a multi-electrode gas focal plane detector, was used to indicate the resolution attainable with low energy {sup 28}Si ions. The results confirm that kinematically suppressed RBS does provide greatly improved sensitivity. 5 refs., 2 figs.

  2. Silicon Photonics Cloud (SiCloud)

    DeVore, P. T. S.; Jiang, Y.; Lynch, M.

    2015-01-01

    Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths.......Silicon Photonics Cloud (SiCloud.org) is the first silicon photonics interactive web tool. Here we report new features of this tool including mode propagation parameters and mode distribution galleries for user specified waveguide dimensions and wavelengths....

  3. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  4. Si nanoparticle-decorated Si nanowire networks for Li-ion battery anodes

    Hu, Liangbing

    2011-01-01

    We designed and fabricated binder-free, 3D porous silicon nanostructures for Li-ion battery anodes, where Si nanoparticles electrically contact current collectors via vertically grown silicon nanowires. When compared with a Si nanowire anode, the areal capacity was increased by a factor of 4 without having to use long, high temperature steps under vacuum that vapour-liquid-solid Si nanowire growth entails. © 2011 The Royal Society of Chemistry.

  5. Antioxidant migration resistance of SiOx layer in SiOx/PLA coated film.

    Huang, Chongxing; Zhao, Yuan; Su, Hongxia; Bei, Ronghua

    2018-02-01

    As novel materials for food contact packaging, inorganic silicon oxide (SiO x ) films are high barrier property materials that have been developed rapidly and have attracted the attention of many manufacturers. For the safe use of SiO x films for food packaging it is vital to study the interaction between SiO x layers and food contaminants, as well as the function of a SiO x barrier layer in antioxidant migration resistance. In this study, we deposited a SiO x layer on polylactic acid (PLA)-based films to prepare SiO x /PLA coated films by plasma-enhanced chemical vapour deposition. Additionally, we compared PLA-based films and SiO x /PLA coated films in terms of the migration of different antioxidants (e.g. t-butylhydroquinone [TBHQ], butylated hydroxyanisole [BHA], and butylated hydroxytoluene [BHT]) via specific migration experiments and then investigated the effects of a SiO x layer on antioxidant migration under different conditions. The results indicate that antioxidant migration from SiO x /PLA coated films is similar to that for PLA-based films: with increase of temperature, decrease of food simulant polarity, and increase of single-sided contact time, the antioxidant migration rate and amount in SiO x /PLA coated films increase. The SiO x barrier layer significantly reduced the amount of migration of antioxidants with small and similar molecular weights and similar physical and chemical properties, while the degree of migration blocking was not significantly different among the studied antioxidants. However, the migration was affected by temperature and food simulant. Depending on the food simulants considered, the migration amount in SiO x /PLA coated films was reduced compared with that in PLA-based films by 42-46%, 44-47%, and 44-46% for TBHQ, BHA, and BHT, respectively.

  6. SiPM properties at cryogenic temperatures

    Biroth, Maik; Achenbach, Patrick; Thomas, Andreas [Institut fuer Kernphysik, Johannes Gutenberg-Universitaet, Mainz (Germany); Downie, Evangeline [George Washington University, DC (United States); Collaboration: A2-Collaboration

    2015-07-01

    At the electron accelerator Mainzer Mikrotron (MAMI) an active target build of polarizable scintillators will be operated at approximately 25 mK. To read out the scintillation light, the photodetectors have to withstand cryogenic temperatures of 4 K and high count rates. Therefore the properties of different types of silicon photomultipliers (SiPMs) were studied at cryogenic temperatures. In liquid nitrogen at 77 K, problems with quenching in Hamamatsu SiPMs and with the protective epoxy layer covering Zecotek SiPMs were observed. Tests with one Zecotek SiPM were successful after removal of the epoxy layer in liquid helium at 4 K and no after-pulses could be observed. Fundamental parameters like break-down voltage, single-pixel gain, crosstalk probability and the dark-count rate were measured and compared to room temperature. The photon detection efficiency was estimated by SiPMs response to short LED pulses. All these parameters were extracted by curve-fitting of SiPM charge spectra with a new analytical function.

  7. Separation of stress-free AlN/SiC thin films from Si substrate

    Redkov, A V; Osipov, A V; Mukhin, I S; Kukushkin, S A

    2016-01-01

    We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent. (paper)

  8. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  9. Stability of Ta-encapsulating Si clusters on Si(111)-(7x7) surfaces

    Uchida, N; Miyazaki, T; Kanayama, T

    2003-01-01

    Tantalum containing Si cluster ions TaSi sub 1 sub 0 sub - sub 1 sub 3 H sub x sup + were synthesized in an ion trap and deposited onto Si(111)-(7x7) surfaces with a kinetic energy of 18 eV. Scanning tunnelling microscope observations revealed that the clusters adsorbed on the surface without decomposition, consistent with ab initio calculation results, that predicted the clusters would have stable Si-cage structures with a Ta atom at the centre. (rapid communication)

  10. Vertical epitaxial wire-on-wire growth of Ge/Si on Si(100) substrate.

    Shimizu, Tomohiro; Zhang, Zhang; Shingubara, Shoso; Senz, Stephan; Gösele, Ulrich

    2009-04-01

    Vertically aligned epitaxial Ge/Si heterostructure nanowire arrays on Si(100) substrates were prepared by a two-step chemical vapor deposition method in anodic aluminum oxide templates. n-Butylgermane vapor was employed as new safer precursor for Ge nanowire growth instead of germane. First a Si nanowire was grown by the vapor liquid solid growth mechanism using Au as catalyst and silane. The second step was the growth of Ge nanowires on top of the Si nanowires. The method presented will allow preparing epitaxially grown vertical heterostructure nanowires consisting of multiple materials on an arbitrary substrate avoiding undesired lateral growth.

  11. Next Generation, Si-Compatible Materials and Devices in the Si-Ge-Sn System

    2015-10-09

    and conclusions The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8...Abstract The work initially focused on growth of next generation Ge1-ySny alloys on Ge buffered Si wafers via UHV CVD depositions of Ge3H8, SnD4. The...AFRL-AFOSR-VA-TR-2016-0044 Next generation, Si -compatible materials and devices in the Si - Ge -Sn system John Kouvetakis ARIZONA STATE UNIVERSITY Final

  12. SiNx layers on nanostructured Si solar cells: Effective for optical absorption and carrier collection

    Cho, Yunae; Kim, Eunah; Gwon, Minji; Kim, Dong-Wook; Park, Hyeong-Ho; Kim, Joondong

    2015-01-01

    We compared nanopatterned Si solar cells with and without SiN x layers. The SiN x layer coating significantly improved the internal quantum efficiency of the nanopatterned cells at long wavelengths as well as short wavelengths, whereas the surface passivation helped carrier collection of flat cells mainly at short wavelengths. The surface nanostructured array enhanced the optical absorption and also concentrated incoming light near the surface in broad wavelength range. Resulting high density of the photo-excited carriers near the surface could lead to significant recombination loss and the SiN x layer played a crucial role in the improved carrier collection of the nanostructured solar cells

  13. White photoluminescence from Si/SiO{sub 2} nanostructured film

    Duong, P.H.; Ngan, N.T.T.; Tuan, C.A. [Institute of Materials Science, Vietnamese Academy of Science and Technology, 18 Hoang Quoc Viet, Hanoi (Viet Nam); Huy, P.T. [International Training Institute of Materials Science, Hanoi University of Technology, 1 Dai Co Viet, Hanoi (Viet Nam); Itoh, T. [Graduate School of Engineering Science, Osaka University, Toyonaka (Japan)

    2008-12-15

    We present in this work the results of PL measurement of Si-NC embedded in Si/SiO{sub 2} multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si-NC. The origin of these phenomena will be discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Specimen size effect considerations for irradiation studies of SiC/SiC

    Youngblood, G.E.; Henager, C.H. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1996-10-01

    For characterization of the irradiation performance of SiC/SiC, limited available irradiation volume generally dictates that tests be conducted on a small number of relatively small specimens. Flexure testing of two groups of bars with different sizes cut from the same SiC/SiC plate suggested the following lower limits for flexure specimen number and size: Six samples at a minimum for each condition and a minimum bar size of 30 x 6.0 x 2.0 mm{sup 3}.

  15. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

    2017-01-01

    The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

  16. Marker experiments in growth studies of Ni2Si, Pd2Si, and CrSi2 formed both by thermal annealing and by ion mixing

    Hung, L.S.; Mayer, J.W.; Pai, C.S.; Lau, S.S.

    1985-01-01

    Inert markers (evaporated tungsten and silver) were used in growth studies of silicides formed both by thermal annealing and by ion mixing in the Ni/Si, Pd/Si, and Cr/Si systems. The markers were initially imbedded inside silicides and backscattering spectrometry was used to determine the marker displacement after different processing conditions. The results obtained in thermal annealing are quite consistent with that found in previous investigations. Ni is the dominant diffusing species in Ni 2 Si, while Si is the diffusing species in CrSi 2 . In Pd 2 Si, both Pd and Si are moving species with Pd the faster of the two. In contrast, in growth of silicides by ion irradiation Si is the faster diffusing species in all three systems

  17. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  18. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

    2014-08-01

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  19. MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

    2014-08-15

    The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

  20. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

    Khazaka, Rami; Michaud, Jean-François; Vennéguès, Philippe; Nguyen, Luan; Alquier, Daniel; Portail, Marc

    2016-11-01

    In this contribution, we performed the growth of a 3C-SiC/Si/3C-SiC layer stack on a Si(001) substrate by means of chemical vapor deposition. We show that, by tuning the growth conditions, the 3C-SiC epilayer can be grown along either the [111] direction or the [110] direction. The key parameter for the growth of the desired 3C-SiC orientation on the Si(110)/3C-SiC(001)/Si(001) heterostructure is highlighted and is linked to the Si epilayer surface morphology. The epitaxial relation between the layers has been identified using X-ray diffraction and transmission electron microscopy (TEM). We showed that, regardless of the top 3C-SiC epilayer orientation, domains rotated by 90° around the growth direction are present in the epilayer. Furthermore, the difference between the two 3C-SiC orientations was investigated by means of high magnification TEM. The results indicate that the faceted Si(110) epilayer surface morphology results in a (110)-oriented 3C-SiC epilayer, whereas a flat hetero-interface has been observed between 3C-SiC(111) and Si(110). The control of the top 3C-SiC growth direction can be advantageous for the development of new micro-electro-mechanical systems.

  1. Revision of the Li13Si4 structure.

    Zeilinger, Michael; Fässler, Thomas F

    2013-11-06

    Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li-Si system is the phase Li13Si4 (trideca-lithium tetra-silicide), the structure of which has been determined previously [Frank et al. (1975 ▶). Z. Naturforsch. Teil B, 30, 10-13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i) the introduction of a split position for one Li site [occupancy ratio 0.838 (7):0.162 (7)], (ii) the anisotropic refinement of atomic displacement parameters for all atoms, and (iii) a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si-Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si-Si dumbbells at z = 0.5.

  2. Electrospun a-Si using Liquid Silane/Polymer Inks

    Doug Schulz

    2010-12-09

    Amorphous silicon nanowires (a-SiNWs) were prepared by electrospinning cyclohexasilane (Si{sub 6}H{sub 12}) admixed with polymethylmethacrylate (PMMA) in toluene. Raman spectroscopy characterization of these wires (d {approx} 50-2000 nm) shows 350 C treatment yields a-SiNWs. Porous a-SiNWs are obtained using a volatile polymer.

  3. Comparative study of SiC- and Si-based photovoltaic inverters

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  4. Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

    Olsen, S.H.; Dobrosz, P.; Escobedo-Cousin, E.; Bull, S.J.; O'Neill, A.G.

    2005-01-01

    Dual channel strained Si/SiGe CMOS architectures currently receive great attention due to maximum performance benefits being predicted for both n- and p-channel MOSFETs. Epitaxial growth of a compressively strained SiGe layer followed by tensile strained Si can create a high mobility buried hole channel and a high mobility surface electron channel on a single relaxed SiGe virtual substrate. However, dual channel n-MOSFETs fabricated using a high thermal budget exhibit compromised mobility enhancements compared with single channel devices, in which both electron and hole channels form in strained Si. This paper investigates the mobility-limiting mechanisms of dual channel structures. The first evidence of increased interface roughness due to the introduction of compressively strained SiGe below the tensile strained Si channel is presented. Interface corrugations degrade electron mobility in the strained Si. Roughness measurements have been carried out using AFM and TEM. Filtering AFM images allowed roughness at wavelengths pertinent to carrier transport to be studied and the results are in agreement with electrical data. Furthermore, the first comparison of strain measurements in the surface channels of single and dual channel architectures is presented. Raman spectroscopy has been used to study channel strain both before and after processing and indicates that there is no impact of the buried SiGe layer on surface macrostrain. The results provide further evidence that the improved performance of the single channel devices fabricated using a high thermal budget arises from improved surface roughness and reduced Ge diffusion into the Si channel

  5. Si/C and H coadsorption at 4H-SiC{0001} surfaces

    Wachowicz, E., E-mail: elwira@ifd.uni.wroc.pl [Institute of Experimental Physics, University of Wrocław, Plac M. Borna 9, PL-50-204 Wrocław (Poland); Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawińskiego 5a, PL-02-106 Warsaw (Poland)

    2016-06-15

    Highlights: • Si on C-terminated and C on Si-terminated surface adsorb in the H{sub 3} hollow site. • The preferred adsorption site is in contrary to the stacking order of bulk crystal. • The presence of hydrogen increases the adsorption energy of Si/C. • Hydrogen weakens the bonds between the adsorbed Si or C and the surface. • Carbon adsorbs on top of the surface carbon on the C-terminated surface. • With both C and H on Si-terminated surface the surface state vanishes. - Abstract: Density functional theory (DFT) study of adsorption of 0.25 monolayer of either Si or C on 4H-SiC{0001} surfaces is presented. The adsorption in high-symmetry sites on both Si- and C-terminated surfaces was examined and the influence of the preadsorbed 0.25 ML of hydrogen on the Si/C adsorption was considered. It was found out that for Si on C-terminated surface and C on Si-terminated the most favourable is threefolded adsorption site on both clean and H-precovered surface. This is contrary to the bulk crystal stacking order which would require adsorption on top of the topmost surface atom. In those cases, the presence of hydrogen weakens the bonding of the adsorbate. Carbon on the C-terminated surface, only binds on-top of the surface atom. The C−C bond-length is almost the same for the clean surface and for one with H and equals to ∼1.33 Å which is shorter by ∼0.2 than in diamond. The analysis of the electronic structure changes under adsorption is also presented.

  6. Sr-Al-Si co-segregated regions in eutectic Si phase of Sr-modified Al-10Si alloy.

    Timpel, M; Wanderka, N; Schlesiger, R; Yamamoto, T; Isheim, D; Schmitz, G; Matsumura, S; Banhart, J

    2013-09-01

    The addition of 200 ppm strontium to an Al-10 wt% Si casting alloy changes the morphology of the eutectic silicon phase from coarse plate-like to fine fibrous networks. In order to clarify this modification mechanism the location of Sr within the eutectic Si phase has been investigated by a combination of high-resolution methods. Whereas three-dimensional atom probe tomography allows us to visualise the distribution of Sr on the atomic scale and to analyse its local enrichment, transmission electron microscopy yields information about the crystallographic nature of segregated regions. Segregations with two kinds of morphologies were found at the intersections of Si twin lamellae: Sr-Al-Si co-segregations of rod-like morphology and Al-rich regions of spherical morphology. Both are responsible for the formation of a high density of multiple twins and promote the anisotropic growth of the eutectic Si phase in specific crystallographic directions during solidification. The experimental findings are related to the previously postulated mechanism of "impurity induced twinning". Copyright © 2012 Elsevier B.V. All rights reserved.

  7. siMS Score: Simple Method for Quantifying Metabolic Syndrome

    Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

    2016-01-01

    Objective To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Materials and Methods Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130?HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * famil...

  8. Ultrathin SiO{sub 2} layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO{sub 2}/Si interface for crystalline Si solar cells

    Matsumoto, Taketoshi; Nakajima, Hiroki; Irishika, Daichi; Nonaka, Takaaki; Imamura, Kentaro; Kobayashi, Hikaru, E-mail: h.kobayashi@sanken.osaka-u.ac.jp

    2017-02-15

    Highlights: • The density of interface states at the SiO{sub 2}/Si interface is decreased by NAOS. • The minority carrier lifetime is increased by the NAOS treatment. • Great interfacial properties of the NAOS layer are kept after thermal oxidation. - Abstract: A combination of the nitric acid oxidation of Si (NAOS) method and post-thermal oxidation is found to efficiently passivate the SiO{sub 2}/n-Si(100) interface. Thermal oxidation at 925 °C and annealing at 450 °C in pure hydrogen atmosphere increases the minority carrier lifetime by three orders of magnitude, and it is attributed to elimination of Si dangling bond interface states. Fabrication of an ultrathin, i.e., 1.1 nm, NAOS SiO{sub 2} layer before thermal oxidation and H{sub 2} annealing further increases the minority carrier lifetime by 30% from 8.6 to 11.1 ms, and decreased the interface state density by 10% from 6.9 × 10{sup 9} to 6.3 × 10{sup 9}eV{sup −1} cm{sup −2}. After thermal oxidation at 800 °C, the SiO{sub 2} layer on the NAOS-SiO{sub 2}/Si(100) structure is 2.26 nm thick, i.e., 0.24 nm thicker than that on the Si(100) surface, while after thermal oxidation at 925 °C, it is 4.2 nm thick, i.e., 0.4 nm thinner than that on Si(100). The chemical stability results from the higher atomic density of a NAOS SiO{sub 2} layer than that of a thermal oxide layer as reported in Ref. [28] (Asuha et al., 2002). Higher minority carrier lifetime in the presence of the NAOS layer indicates that the NAOS-SiO{sub 2}/Si interface with a low interface state density is preserved after thermal oxidation, which supports out-diffusion oxidation mechanism, by which a thermal oxide layer is formed on the NAOS SiO{sub 2} layer.

  9. Capacidade seladora proporcionada por alguns materiais quando utilizados em perfurações na região de furca de molares humanos extraídos Sealing capacity produced by some materials when utilized under furcation perforations of extract human molars

    Ulisses Xavier da Silva Neto

    2003-03-01

    Full Text Available Avaliou-se, in vitro, a capacidade seladora, do MTA-Angelus, ProRoot-MTA, Super-EBA e MBP-c, quando utilizados para selar perfurações na região de furca de molares humanos extraídos; quando aplicados isoladamente ou em associação com uma matriz de gesso Paris, aplicada no fundo do trajeto da perfuração. O selamento produzido pelos materiais foi analisado por meio da infiltração do corante rhodamine B 0,2%. A análise estatística aplicada aos dados obtidos demonstrou que, quando utilizado isoladamente (sem matriz, o cimento MBP-c apresentou os menores índices de infiltração marginal, seguido pelo Super-EBA, apresentando diferença estatística significante (pIt has been evaluated in vitro the sealing capacity of MTA-Angelus, ProRoot-MTA, Super-EBA and MBP-c when sealing furcal perforations of extracted human molars. The experiment took place with materials both isolated as well as in association with a plaster of Paris matrix applied at the bottom of the perfuration path. The materials sealing capacity was analyzed by dye leakage of rhodamine B 0,2%.The statistical analysis revealed that when isolated and tested (without the matrix, the cement MBP-c presented the smallest coefficient of marginal leakage, followed by the Super-EBA. There was a statistical significance between those and the cements ProRoot - MTA e MTA - Angelus (p<0,001. In the presence of the matrix, the cement MBP-c also had a superior performance having statistical significance between those and the cements ProRoot - MTA e MTA - Angelus (p<0,05; The Plaster of Paris matrix had a negative impact with statistical significance regarding the sealing capacity of the cements Super-EBA and the MBP-c (p<0,05. Nevertheless, it avoided the leakage of the respective sealing materials.

  10. Avaliação clínica de uma resina composta modificada por poliácido, utilizada como selante oclusal, quando aplicada por dentista, THD e graduando Clinical evaluation of a polyacid-modified resin composite, used as an occlusal sealant, when applied by dentist, dental hygienist and undergraduate

    Roberta Tarkany BASTING

    1999-04-01

    Full Text Available O presente trabalho tem por finalidade comparar as diferenças de retenção de uma resina composta modificada por poliácido (Variglass V.L.C., utilizada como selante oclusal, quando aplicada por dentista, THD e graduando em Odontologia. Foram seladas as superfícies oclusais de 370 primeiros molares permanentes superiores de crianças entre 6 e 8 anos de idade provenientes de escolas públicas do município de Piracicaba. As avaliações clínicas foram realizadas após seis e oito meses da aplicação do selante. Aos seis meses, verificou-se que 78,42% dos selantes clinicamente aceitáveis permaneceram retidos sobre a superfície oclusal. O índice de perdas totais corresponderam a 10,20% do total de selantes aplicados. O melhor índice de retenção total foi obtido quando aplicado por graduando. Aos 12 meses, houve um aumento do número de selantes perdidos (43,79% e conseqüente decréscimo do número de selantes totalmente retidos (18,96%, não havendo diferenças significativas de retenção do selante quando aplicado por dentista, THD e graduando. Nos casos de perdas totais do selante, não se constatou presença de lesão cariosa.The aim of this work is to evaluate the differences of clinical retention of a polyacid-modified resin composite (Variglass V.L.C., used as an occlusal sealant, when applied by dentist, dental hygienist and undergraduate in Dentistry. The occlusal surfaces of 370 superior first molars of children ageing from 6 to 8 years from public schools in Piracicaba, were sealed. The presented data are related to the final evaluation after 6 and 12 months. It was observed that after 6 months, 78.42% of the sealants clinically acceptable, remained on the occlusal surfaces and that the completely lost sealants reached 10.20%. The best results of the sealants retention were obtained when the sealants were applied by an undergraduate. After 12 months, there was an increase of completely lost sealants (43.79% and a decrease of

  11. Near-surface segregation in irradiated Ni3Si

    Wagner, W.; Rehn, L.E.; Wiedersich, H.

    1982-01-01

    The radiation-induced growth of Ni 3 Si films on the surfaces of Ni(Si) alloys containing = 3 Si phase has been observed. Post-irradiation depth profiling by Auger electron spectroscopy, as well as in situ analysis by high-resolution Rutherford backscattering spectrometry, reveals Si-enrichment at the surfaces of Ni(Si) alloys in excess of stoichiometric Ni 3 Si during irradiation. Thin, near-surface layers with silicon concentrations of 28 to 30 at.% are observed, and even higher Si enrichment is found in the first few atom layers. Transmission electron microscopy and selected area-electron diffraction were employed to characterize these Si-enriched layers. A complex, multiple-spot diffraction pattern is observed superposed on the diffraction pattern of ordered Ni 3 Si. The d-spacings obtained from the extra spots are consistent with those of the orthohexagonal intermetallic compound Ni 5 Si 2 . (author)

  12. Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors

    Wei-Ting eLai

    2016-02-01

    Full Text Available We report the first-of-its-kind, self-organized gate-stack heterostructure of Ge-dot/SiO2/SiGe-shell on Si fabricated in a single step through the selective oxidation of a SiGe nano-patterned pillar over a Si3N4 buffer layer on a Si substrate. Process-controlled tunability of the Ge-dot size (7.5−90 nm, the SiO2 thickness (3−4 nm, and as well the SiGe-shell thickness (2−15 nm has been demonstrated, enabling a practically-achievable core building block for Ge-based metal-oxide-semiconductor (MOS devices. Detailed morphologies, structural, and electrical interfacial properties of the SiO2/Ge-dot and SiO2/SiGe interfaces were assessed using transmission electron microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent high/low-frequency capacitance-voltage measurements. Notably, NiGe/SiO2/SiGe and Al/SiO2/Ge-dot/SiO2/SiGe MOS capacitors exhibit low interface trap densities of as low as 3-5x10^11 cm^-2·eV^-1 and fixed charge densities of 1-5x10^11 cm^-2, suggesting good-quality SiO2/SiGe-shell and SiO2/Ge-dot interfaces. In addition, the advantage of having single-crystalline Si1-xGex shell (x > 0.5 in a compressive stress state in our self-aligned gate-stack heterostructure has great promise for possible SiGe (or Ge MOS nanoelectronic and nanophotonic applications.

  13. Metallization of ion beam synthesized Si/3C-SiC/Si layer systems by high-dose implantation of transition metal ions

    Lindner, J.K.N.; Wenzel, S.; Stritzker, B.

    2001-01-01

    The formation of metal silicide layers contacting an ion beam synthesized buried 3C-SiC layer in silicon by means of high-dose titanium and molybdenum implantations is reported. Two different strategies to form such contact layers are explored. The titanium implantation aims to convert the Si top layer of an epitaxial Si/SiC/Si layer sequence into TiSi 2 , while Mo implantations were performed directly into the SiC layer after selectively etching off all capping layers. Textured and high-temperature stable C54-TiSi 2 layers with small additions of more metal-rich silicides are obtained in the case of the Ti implantations. Mo implantations result in the formation of the high-temperature phase β-MoSi 2 , which also grows textured on the substrate. The formation of cavities in the silicon substrate at the lower SiC/Si interface due to the Si consumption by the growing silicide phase is observed in both cases. It probably constitutes a problem, occurring whenever thin SiC films on silicon have to be contacted by silicide forming metals independent of the deposition technique used. It is shown that this problem can be solved with ion beam synthesized contact layers by proper adjustment of the metal ion dose

  14. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  15. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  16. Exceptional cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si heterostructures

    Chen, Da; Wang, Dadi; Chang, Yongwei; Li, Ya; Ding, Rui; Li, Jiurong; Chen, Xiao; Wang, Gang; Guo, Qinglei

    2018-01-01

    The cracking behavior in H-implanted Si/B-doped Si0.70Ge0.30/Si structures after thermal annealing was investigated. The crack formation position is found to closely correlate with the thickness of the buried Si0.70Ge0.30 layer. For H-implanted Si containing a buried 3-nm-thick B-doped Si0.70Ge0.30 layer, localized continuous cracking occurs at the interfaces on both sides of the Si0.70Ge0.30 interlayer. Once the thickness of the buried Si0.70Ge0.30 layer increases to 15 and 70 nm, however, a continuous sharp crack is individually observed along the interface between the Si substrate and the B-doped Si0.70Ge0.30 interlayer. We attribute this exceptional cracking behavior to the existence of shear stress on both sides of the buried Si0.70Ge0.30 layer and the subsequent trapping of hydrogen, which leads to a crack in a well-controlled manner. This work may pave the way for high-quality Si or SiGe membrane transfer in a feasible manner, thus expediting its potential applications to ultrathin silicon-on-insulator (SOI) or silicon-germanium-on-insulator (SGOI) production.

  17. Transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si1-xCx nanocomposites mixed with Si nanoparticles and C atoms

    Shin, J.W.; Oh, D.H.; Kim, T.W.; Cho, W.J.

    2009-01-01

    Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, and fast-Fourier transformed electron-diffraction patterns showed that n-butyl terminated Si nanoparticles were aggregated. The formation of Si 1-x C x nanocomposites was mixed with Si nanoparticles and C atoms embedded in a SiO 2 layer due to the diffusion of C atoms from n-butyl termination shells into aggregated Si nanoparticles. Atomic force microscopy (AFM) images showed that the Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms existed in almost all regions of the SiO 2 layer. The formation mechanism of Si nanoparticles and the transformation mechanism of n-butyl terminated Si nanoparticles embedded into Si 1-x C x nanocomposites mixed with Si nanoparticles and C atoms are described on the basis of the TEM, HRTEM, and AFM results. These results can help to improve the understanding of the formation mechanism of Si nanoparticles.

  18. Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission

    Lockwood, David; Wu, Xiaohua; Baribeau, Jean-Marc; Mala, Selina; Wang, Xialou; Tsybeskov, Leonid

    2016-03-01

    Fast optical interconnects together with an associated light emitter that are both compatible with conventional Si-based complementary metal-oxide- semiconductor (CMOS) integrated circuit technology is an unavoidable requirement for the next-generation microprocessors and computers. Self-assembled Si/Si1-xGex nanostructures, which can emit light at wavelengths within the important optical communication wavelength range of 1.3 - 1.55 μm, are already compatible with standard CMOS practices. However, the expected long carrier radiative lifetimes observed to date in Si and Si/Si1-xGex nanostructures have prevented the attainment of efficient light-emitting devices including the desired lasers. Thus, the engineering of Si/Si1-xGex heterostructures having a controlled composition and sharp interfaces is crucial for producing the requisite fast and efficient photoluminescence (PL) at energies in the range 0.8-0.9 eV. In this paper we assess how the nature of the interfaces between SiGe nanostructures and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in three dimensions (corresponding to the case of quantum dots), two dimensions (corresponding to quantum wires), and one dimension (corresponding to quantum wells). The interface sharpness is influenced by many factors such as growth conditions, strain, and thermal processing, which in practice can make it difficult to attain the ideal structures required. This is certainly the case for nanostructure confinement in one dimension. However, we demonstrate that axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50 - 120 nm produce a clear PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, the experiments outlined here show that two quite different Si1-xGex nanostructures incorporated into a Si0.6Ge0.4 wavy

  19. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  20. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  1. Chemically activated graphene/porous Si@SiO{sub x} composite as anode for lithium ion batteries

    Tao, Hua-Chao [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Yang, Xue-Lin, E-mail: xlyang@ctgu.edu.cn [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China); Zhang, Lu-Lu; Ni, Shi-Bing [College of Materials and Chemical Engineering, China Three Gorges University, 8 Daxue Road, Yichang, Hubei 443002 (China); Collaborative Innovation Center for Microgrid of New Energy, Hubei Province (China)

    2014-10-15

    Chemically activated graphene/porous Si@SiO{sub x} (CAG/Si@SiO{sub x}) composite has been synthesized via magnesiothemic reduction of mesoporous SiO{sub 2} (MCM-48) to porous Si@SiO{sub x} and dispersing in the suspension of chemically activated graphene oxide (CAGO) followed by thermal reduction. The porous Si@SiO{sub x} particles are well encapsulated in chemically activated graphene (CAG) matrix. The resulting CAG/Si@SiO{sub x} composite exhibits a high reversible capacity and excellent cycling stability up to 763 mAh g{sup −1} at a current density of 100 mA g{sup −1} after 50 cycles. The porous structure of CAG layer and Si@SiO{sub x} is beneficial to accommodate volume expansion of Si during discharge and charge process and the interconnected CAG improves the electronic conductivity of composite. - Highlights: • Chemically activated graphene encapsulated porous Si composite was prepared. • The graphene offers a continuous electrically conductive network. • The porous structure can accommodate volume expansion of Si-based materials. • The composite exhibits excellent lithium storage performance.

  2. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  3. Simulations of Proton Implantation in Silicon Carbide (SiC)

    2016-03-31

    Simulations of Proton Implantation in Silicon Carbide (SiC) Jonathan P. McCandless, Hailong Chen, Philip X.-L. Feng Electrical Engineering, Case...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...relevant to experimental radiation of SiC layers. Keywords: silicon carbide (SiC); radiation effects; ion implantation ; proton; stopping and range of

  4. Synthesis of micro-sized interconnected Si-C composites

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  5. SiC-Si as a support material for oxygen evolution electrode in PEM steam electrolysers

    Nikiforov, Aleksey; Tomás García, Antonio Luis; Petrushina, Irina

    2011-01-01

    The need of higher energy efficiency in hydrogen production has promoted the research on improved catalysts for water electrolysis. In this work, a novel supported catalyst for oxygen evolution electrodes was prepared and characterized with different techniques. IrO2 supported on a SiC/Si composite...

  6. Progressive degradation in a-Si: H/SiN thin film transistors

    Merticaru, A.R.; Mouthaan, A.J.; Kuper, F.G.

    2003-01-01

    In this paper we present the study of gate-stress induced degradation in a-Si:H/SiN TFTs. The drain current transient during gate bias stress (forward or reverse bias) and subsequent relaxation cannot be fitted with the models existent in the literature but it shows to be described by a progressive

  7. INCLUSIVE SYSTEMATICS FOR SI-28+SI-28 REACTIONS BETWEEN 20 AND 35 MEV PER NUCLEON

    BOX, PF; GRIFFIOEN, KA; DECOWSKI, P; BOOTSMA, T; GIERLIK, E; VANNIEUWENHUIZEN, GJ; TWENHOFEL, C; KAMERMANS, R; WILSCHUT, HW; GIORNI, A; MORAND, C; DEMEYER, A; GUINET, D

    Inclusive velocity spectra of heavy ions produced in the Si-28 + Si-28 reaction at 22, 26, 30, and 35 MeV per nucleon were measured and decomposed into peripheral and central components using an analytical moving-source parametrization. The persistence of incomplete fusion followed by evaporation

  8. Phenomenological inelastic constitutive equations for SiC and SiC fibers under irradiation

    El-Azab, A.; Ghoniem, N.M.

    1994-01-01

    Experimental data on irradiation-induced dimensional changes and creep in β-SiC and SiC fibers is analyzed, with the objective of studying the constitutive behavior of these materials under high-temperature irradiation. The data analysis includes empirical representation of irradiation-induced dimensional changes in SiC matrix and SiC fibers as function of time and irradiation temperature. The analysis also includes formulation of simple scaling laws to extrapolate the existing data to fusion conditions on the basis of the physical mechanisms of radiation effects on crystalline solids. Inelastic constitutive equations are then developed for SCS-6 SiC fibers, Nicalon fibers and CVD SiC. The effects of applied stress, temperature, and irradiation fields on the deformation behavior of this class of materials are simultaneously represented. Numerical results are presented for the relevant creep functions under the conditions of the fusion reactor (ARIES IV) first wall. The developed equations can be used in estimating the macro mechanical properties of SiC-SiC composite systems as well as in performing time-dependent micro mechanical analysis that is relevant to slow crack growth and fiber pull-out under fusion conditions

  9. NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

    Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

    2017-10-01

    The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

  10. Weld microstructure in cast AlSi9/SiC(p metal matrix composites

    J. Wysocki

    2009-04-01

    Full Text Available Welded joint in cast AlSi9/SiC/20(p metal matrix composite by manual TIG arc welding using AlMg5 filler metal has been described inhis paper. Cooling curves have been stated, and the influence in distribution of reinforced particles on crystallization and weldmicrostructure. Welded joint mechanical properties have been determined: hardness and tensile.

  11. Atomic state and characterization of nitrogen at the SiC/SiO2 interface

    Xu, Y.; Garfunkel, E. L.; Zhu, X.; Lee, H. D.; Xu, C.; Shubeita, S. M.; Gustafsson, T.; Ahyi, A. C.; Sharma, Y.; Williams, J. R.; Lu, W.; Ceesay, S.; Tuttle, B. R.; Pantelides, S. T.; Wan, A.; Feldman, L. C.

    2014-01-01

    We report on the concentration, chemical bonding, and etching behavior of N at the SiC(0001)/SiO 2 interface using photoemission, ion scattering, and computational modeling. For standard NO processing of a SiC MOSFET, a sub-monolayer of nitrogen is found in a thin inter-layer between the substrate and the gate oxide (SiO 2 ). Photoemission shows one main nitrogen related core-level peak with two broad, higher energy satellites. Comparison to theory indicates that the main peak is assigned to nitrogen bound with three silicon neighbors, with second nearest neighbors including carbon, nitrogen, and oxygen atoms. Surprisingly, N remains at the surface after the oxide was completely etched by a buffered HF solution. This is in striking contrast to the behavior of Si(100) undergoing the same etching process. We conclude that N is bound directly to the substrate SiC, or incorporated within the first layers of SiC, as opposed to bonding within the oxide network. These observations provide insights into the chemistry and function of N as an interface passivating additive in SiC MOSFETs

  12. Atomization of U3Si2/U3Si for research reactor fuel

    Kuk, Il Hiun

    2004-01-01

    Instead of comminuting, U 3 Si 2 /U 3 Si powders are produced by atomizating directly from the molten alloys. Many benefits are introduced by applying the atomization technique: reduction of the process, homogeneous alloy composition within a particle and between particles, increase of the thermal conductivity and decrease of the chemical reactivity with aluminium due to particle's spherical shape. (author)

  13. Effects of dual-ion irradiation on the swelling of SiC/SiC composites

    Kishimoto, Hirotatsu; Kohyama, Akira; Ozawa, Kazumi; Kondo, Sosuke

    2005-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibers is a candidate structural material of fusion gas-cooled blanket system. From the viewpoint of material designs, it is important to investigate the swelling by irradiation, which results from the accumulation of displacement damages. In the fusion environment, (n, α) nuclear reactions are considered to produce helium gas in SiC. For the microstructural evolution, a dual-ion irradiation method is able to simulate the effects of helium. In the present research, 1.7 MeV tandem and 1 MeV single-end accelerators were used for Si self-ion irradiation and helium implantation, respectively. The average helium over displacement per atom (dpa) ratio in SiC was adjusted to 60 appm/dpa. The irradiation temperature ranged from room temperature to 1400degC. The irradiation-induced swelling was measured by the step height method. Helium that was implanted simultaneously with displacement damages in dual-ion irradiated SiC increased the swelling that was larger than that by single-ion irradiated SiC below 800degC. Since this increase was not observed above 1000degC, the interaction of helium and displacement damages was considered to change above 800degC. In this paper, the microstructural behavior and dimensional stability of SiC materials under the fusion relevant environment are discussed. (author)

  14. New evaluation method of crack growth in SiC/SiC composites using interface elements

    Serizawa, H.; Ando, M.; Lewinsohn, C.A.; Murakawa, H.

    2000-01-01

    Crack propagation behavior in SiC/SiC composites was analyzed using a new computer simulation method that included time-dependent interface elements. The simulation method was used to describe the time-dependent crack growth in SiC/SiC composites under four-point bending of single-edge-notched beam bend-bars. Two methods were used to simulate time-dependent crack growth in SiC/SiC composites due to fiber creep. In one method, the creep property was introduced into the interface elements by the general method of finite element method (FEM) analysis. In the second method, a new technique making the best use of the potential function was used to represent crack closure tractions due to creeping fibers. The stage-II slow crack growth of a general creep deformation was simulated by both methods. Additionally, stage-III crack growth and the transition from stage-II to stage-III could be simulated by the new method. The new method has the potential to completely simulate time-dependent crack growth behavior in SiC/SiC composites due to fiber creep

  15. Anomalous defect processes in Si implanted amorphous SiO2, II

    Fujita, Tetsuo; Fukui, Minoru; Okada, Syunji; Shimizu-Iwayama, Tsutomu; Hioki, Tatsumi; Itoh, Noriaki

    1994-01-01

    Aanomalous features of the defects in Si implanted amorphous SiO 2 are reported. The numbers of E 1 prime centers and B 2 centers are found to increase monotonically with implanted Si dose, in contrast to the saturating feature of these numbers in Ar implanted samples. Moreover, when H ions are implanted in amorphous SiO 2 predamaged by Si implantation, both of the density and the number of E 1 prime centers increase and they reach a constant value at a small H dose. We point out that these anomalies can be explained in terms of the difference in the cross-section for defect annihilation in the specimens implanted with Si ions and other ions, in accordance with the homogeneous model proposed by Devine and Golanski. We consider that the main mechanism of defect annihilation is the recombination of an E 1 prime center and an interstitial O, which is stabilized by an implanted Si, reducing the cross-section in Si-implanted specimens. ((orig.))

  16. Precipitation and strengthening phenomena in Al-Si-Ge and Al-Cu-Si-Ge alloys

    Mitlin, D.; Morris, J.W.; Dahmen, U.; Radmilovic, V.

    2000-01-01

    The objective of this work was to determine whether Al rich Al-Si-Ge and 2000 type Al-Cu-Si-Ge alloys have sufficient hardness to be useful for structural applications. It is shown that in Al-Si-Ge it is not possible to achieve satisfactory hardness through a conventional heat treatment. This result is explained in terms of sluggish precipitation of the diamond-cubic Si-Ge phase coupled with particle coarsening. However, Al-Cu-Si-Ge displayed a uniquely fast aging response, a high peak hardness and a good stability during prolonged aging. The high hardness of the Cu containing alloy is due to the dense and uniform distribution of fine θ' precipitates (metastable Al 2 Cu) which are heterogeneously nucleated on the Si-Ge particles. High resolution TEM demonstrated that in both alloys all the Si-Ge precipitates start out, and remain multiply twinned throughout the aging treatment. Since the twinned section of the precipitate does not maintain a low index interface with the matrix, the Si-Ge precipitates are equiaxed in morphology. Copyright (2000) AD-TECH - International Foundation for the Advancement of Technology Ltd

  17. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys ...

    The effect of grain refiner, modifier, and combination of grain refiner cum modifier was studied on Al-5Si and Al-11Si alloys using computer aided cooling curve analysis. For combined grain refinement and modification effect, Al-Ti-B-Sr single master alloy was developed that acted as both grain refiner and modifier.

  18. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Onojima, Norio; Kasamatsu, Akihumi; Hirose, Nobumitsu; Mimura, Takashi; Matsui, Toshiaki

    2008-01-01

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g m ) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel

  19. C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

    Onojima, Norio [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)], E-mail: nonojima@nict.go.jp; Kasamatsu, Akihumi; Hirose, Nobumitsu [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Mimura, Takashi [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan); Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Matsui, Toshiaki [National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795 (Japan)

    2008-07-30

    Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g{sub m}) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f{sub T} compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.

  20. Nanoscale Structuring by Misfit Dislocations in Si1-xGex/Si Epitaxial Systems

    Shiryaev, S.Y.; Jensen, Flemming; Hansen, J. Lundsgaard

    1997-01-01

    New capabilities of misfit dislocations for spatial manipulation of islands in Si1-xGex/Si heteroepitaxial systems have been elucidated. Formation of highly ordered Ge-island patterns on substrates prestructured by slip bands of misfit dislocations is revealed. The major sources leading to the or...

  1. Nonviral pulmonary delivery of siRNA.

    Merkel, Olivia M; Kissel, Thomas

    2012-07-17

    RNA interference (RNAi) is an important part of the cell's defenses against viruses and other foreign genes. Moreover, the biotechnological exploitation of RNAi offers therapeutic potential for a range of diseases for which drugs are currently unavailable. Unfortunately, the small interfering RNAs (siRNAs) that are central to RNAi in the cytoplasm are readily degradable by ubiquitous nucleases, are inefficiently targeted to desired organs and cell types, and are excreted quickly upon systemic injection. As a result, local administration techniques have been favored over the past few years, resulting in great success in the treatment of viral infections and other respiratory disorders. Because there are several advantages of pulmonary delivery over systemic administration, two of the four siRNA drugs currently in phase II clinical trials are delivered intranasally or by inhalation. The air-blood barrier, however, has only limited permeability toward large, hydrophilic biopharmaceuticals such as nucleic acids; in addition, the lung imposes intrinsic hurdles to efficient siRNA delivery. Thus, appropriate formulations and delivery devices are very much needed. Although many different formulations have been optimized for in vitro siRNA delivery to lung cells, only a few have been reported successful in vivo. In this Account, we discuss both obstacles to pulmonary siRNA delivery and the success stories that have been achieved thus far. The optimal pulmonary delivery vehicle should be neither cytotoxic nor immunogenic, should protect the payload from degradation by nucleases during the delivery process, and should mediate the intracellular uptake of siRNA. Further requirements include the improvement of the pharmacokinetics and lung distribution profiles of siRNA, the extension of lung retention times (through reduced recognition by macrophages), and the incorporation of reversible or stimuli-responsive binding of siRNA to allow for efficient release of the siRNAs at the

  2. Compression of Fe-Si-H alloys

    Tagawa, S.; Ohta, K.; Hirose, K.

    2014-12-01

    The light elements in the Earth's core have not been fully identified yet, but hydrogen is now collecting more attention in part because recent planet formation theory suggests that large amount of water should have been brought to the Earth during its formation (giant-impact stage). Nevertheless, the effect of hydrogen on the property of iron alloys is little known so far. The earlier experimental study by Hirao et al. [2004 GRL] examined the compression behavior of dhcp FeHx (x ≈ 1) and found that it becomes much stiffer than pure iron above 50 GPa, where magnetization disappears. Here we examined the solubility of hydrogen into iron-rich Fe-Si alloys and the compression behavior of dhcp Fe-Si-H alloy at room temperature. Fe+6.5wt.%Si or Fe+9wt.%Si foil was loaded into a diamond-anvil cell (DAC), and then liquid hydrogen was introduced at temperatures below 20 K. X-ray diffraction measurements at SPring-8 revealed the formation of a dhcp phase with or without thermal annealing by laser above 8.4 GPa. The concentration of hydrogen in such dhcp lattice was calculated following the formula reported by Fukai [1992]; y = 0.5 and 0.2 for Fe-6.5wt.%Si-H or Fe-9wt.%Si-H alloys, respectively when y is defined as Fe(1-x)SixHy. Unlike Fe-H alloy, hydrogen didn't fully occupy the octahedral sites even under hydrogen-saturated conditions in the case of Fe-Si-H system. Anomaly was observed in obtained pressure-volume curve around 44 Å3 of unit-cell volume for both Fe-6.5wt.%Si-H and Fe-9wt.%Si-H alloys, which may be related to the spin transition in the dhcp phase. They became slightly stiffer at higher pressures, but their compressibility was still similar to that of pure iron.

  3. Strain distribution in freestanding Si/Si{sub x}N{sub y} membranes studied by transmission electron microscopy

    Gao, Hongye, E-mail: hongye18@mm.kyushu-u.ac.j [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Ikeda, Ken-ichi; Hata, Satoshi; Nakashima, Hideharu [Faculty of Engineering Sciences, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan); Wang, Dong; Nakashima, Hiroshi [Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580 (Japan)

    2010-09-30

    Strain was induced in a bridge-shaped freestanding Si membrane (FSSM) by depositing an amorphous Si{sub x}N{sub y} layer to surround the Si membrane. Convergent beam electron diffraction revealed that compressive strain is distributed uniformly along the horizontal direction in Si{sub x}N{sub y}-deposited FSSM. On the other hand, strain decreases to almost zero at the ends of the FSSM, where the Si{sub x}N{sub y} layer beneath the Si layer is replaced by a SiO{sub 2} buried oxide layer.

  4. The dependence of the interface and shape on the constrained growth of nc-Si in a-SiN sub x /a-Si:H/a-SiN sub x structures

    Zhang Li; Wang Li; Li Wei; Xu Jun; Huang Xin Fan; Chen Kun Ji

    2002-01-01

    Size-controlled nanocrystalline silicon (nc-Si) has been prepared from a-SiN sub x /a-Si:H/a-SiN sub x ('a' standing for amorphous) structures by thermal annealing. Transmission electron microscope analyses show that the lateral size of the nc-Si is controlled by the annealing conditions and the a-Si sublayer thickness. The deviation of the nc-Si grain size distribution decreases with the a-Si sublayer thickness, so thinner a-Si sublayers are favourable for obtaining uniform nc-Si grains. In the a-Si:H (10 nm) sample annealed at 1000 deg. C for 30 min, an obvious bi-modal size distribution of nc-Si grains appears, but no obvious bi-modal size distribution is found in other samples with thinner a-Si:H sublayers. On the basis of the experimental results, we discuss the process of transition from the sphere-like shape to the disc-like shape in the growth model of the nc-Si crystallization. The critical thickness of the a-Si sublayer for the constrained crystallization can be determined by the present model. More...

  5. Strained Si engineering for nanoscale MOSFETs

    Park, Jea-Gun; Lee, Gon-Sub; Kim, Tae-Hyun; Hong, Seuck-Hoon; Kim, Seong-Je; Song, Jin-Hwan; Shim, Tae-Hun

    2006-01-01

    We have revealed a strain relaxation mechanism for strained Si grown on a relaxed SiGe-on-insulator structure fabricated by the bonding, dislocation sink, or condensation method. Strain relaxation for both the bonding and dislocation sink methods was achieved by grading the Ge concentration; in contrast, the relaxation for the condensation method was achieved through Ge atom condensation during oxidation. In addition, we estimated the surface roughness and threading-dislocation pit density for relaxed SiGe layer fabricated by the bonding, dislocation sink, or condensation method. The surface roughness and threading-dislocation pit density for the bonding, dislocation sink, and condensation methods were 2.45, 0.46, and 0.40 nm and 5.0 x 10 3 , 9 x 10 3 , and 0, respectively. In terms of quality and cost-effectiveness, the condensation method was superior to the bonding and dislocation sink methods for forming strained Si on a relaxed SiGe-on-insulator structure

  6. Carrier recombination in tailored multilayer Si/Si{sub 1−x}Ge{sub x} nanostructures

    Mala, S.A. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Tsybeskov, L., E-mail: tsybesko@njit.edu [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102 (United States); Lockwood, D.J.; Wu, X.; Baribeau, J.-M. [National Research Council, Ottawa, ON, Canada KIA 0R6 (Canada)

    2014-11-15

    Photoluminescence (PL) measurements were performed in Si/Si{sub 1−x}Ge{sub x} nanostructures with a single Si{sub 0.92}Ge{sub 0.08} nanometer-thick layer incorporated into Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si{sub 0.92}Ge{sub 0.08} nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si{sub 0.6}Ge{sub 0.4} cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.

  7. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  8. Positron annihilation in Si and Si-related materials in thermal equilibrium at high temperature

    Uedono, A.; Muramatsu, M.; Ubukata, T.; Tanino, H.; Shiraishi, T.; Tanigawa, S.; Takasu, S.

    2001-01-01

    Annihilation characteristics of positrons in the carbon/Si structure in thermal equilibrium at high temperature were studied using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured as a function of incident positron energy in the temperature range between 298 K and 1473 K. Above 1173 K, the value of S corresponding to the annihilation of positrons near the carbon/Si interface started to increase, which was attributed to the carbonization of Si and the introduction of open-space defects due to the diffusion of Si atoms toward the carbon layer. The behavior of Ps in a thermally grown SiO 2 film was also studied at 298-1523 K. (orig.)

  9. Mechanoactivation of chromium silicide formation in the SiC-Cr-Si system

    Vlasova M.

    2002-01-01

    Full Text Available The processes of simultaneous grinding of the components of a SiC-Cr-Si mixture and further temperature treatment in the temperature range 1073-1793 K were studied by X-ray phase analysis, IR spectroscopy, electron microscopy, and X-ray microanalysis. It was established that, during grinding of the mixture, chromium silicides form. A temperature treatment completes the process. Silicide formation proceeds within the framework of the diffusion of silicon into chromium. In the presence of SiO2 in the mixture, silicide formation occurs also as a result of the reduction of silica by silicon and silicon carbide. The sintering of synthesized composite SiC-chromium silicides powders at a high temperature under a high pressure (T = 2073 K, P = 5 GPa is accompanied by the destruction of cc-SiC particles, the cc/3 transition in silicon carbide and deformation distortions of the lattices of chromium silicides.

  10. Joining of SiCf/SiC composites for thermonuclear fusion reactors

    Ferraris, M.; Badini, C.; Montorsi, M.; Appendino, P.; Scholz, H.W.

    1994-01-01

    Due to their favourable radiological behaviour, SiC f /SiC composites are promising structural materials for future use in fusion reactors. A problem to cope with is the joining of the ceramic composite material (CMC) to itself for more complex structures. Maintenance concepts for a reactor made of SiC f /SiC will demand a method of joining. The joining agents should comply with the low-activation approach of the base material. With the acceptable elements Si and Mg, sandwich structures of composite/metal/composite were prepared in Ar atmosphere at temperatures just above the melting points of the metals. Another promising route is the use of joining agents of boro-silicate glasses: their composition can be tailored to obtain softening temperatures of interest for fusion applications. The glassy joint can be easily ceramised to improve thermomechanical properties. The joining interfaces were investigated by SEM-EDS, XRD and mechanical tests. ((orig.))

  11. Formation of permeation barriers on ceramic SiC/SiC composites

    Racault, C.; Fenici, P.

    1996-01-01

    The effectiveness as permeation barriers of the following CVD and PVD (sputtering) coatings has been investigated: TiC+Al 2 O 3 (CVD), SiC(CVD), SiO 2 (CVD), TiN(CVD), TiN(CVD)+TiN(PVD) and SiC(CVD)+Al 2 O 3 (PVD). The substrate material was a SiC/SiC composite, proposed as low activation structural material for fusion applications. Permeation measurements were performed in the temperature range 300-750 K using deuterium at pressures in the range 0.5-150 kPa. A linear dependence of permeation rate on pressure was measured. The efficiency of the coatings as deuterium permeation barriers is discussed in terms of coating microstructure. The best result was obtained with a bilayer of TiN(CVD) (15 μm) +TiN(PVD) (8 μm). (orig.)

  12. On the compliant behaviour of free-standing Si nanostructures on Si(001) for Ge nanoheteroepitaxy

    Kozlowski, Grzegorz

    2012-04-24

    Selective chemical vapor deposition Ge heteroepitaxy approaches for high quality Ge nanostructure growth with reasonable thermal budget must be developed for local Ge photonic module integration. A promising vision is offered by the compliant substrate effects within nanometer scale Ge/Si heteroepitaxial structures. Here, in contrast to the classical Ge deposition on bulk Si substrates, the thermal and lattice mismatch strain energy accumulated in the Ge epilayer is partially shifted to the free-standing Si nanostructure. This strain partitioning phenomenon is at the very heart of the nanoheteroepitaxy theory (NHE) and, if strain energy levels are correctly balanced, offers the vision to grow defect-free nanostructures of lattice mismatched semiconductors on Si. In case of the Ge/Si heterosystem with a lattice mismatch of 4.2%, the strain partitioning phenomenon is expected to be triggered when free-standing Si nanopillars with the width of 50 nm and below are used. In order to experimentally verify NHE with its compliant substrate effects, a set of free-standing Ge/Si nanostructures with diameter ranging from 150 to 50 nm were fabricated and investigated. The main limitation corresponds to a simultaneous detection of (a) the strain partitioning phenomenon between Ge and Si and (b) the absence of defects on the nano-scale. In this respect, synchrotron-based grazing incidence X-ray diffraction was applied to study the epitaxial relationship, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. Raman spectroscopy supported by finite element method calculations were used to investigate the strain distribution within a single Ge/Si nanostructure. Special focus was devoted to transmission electron microscopy to determine the quality of the Ge epilayer. It was found, that although high quality Ge nanoclusters can be achieved by thermal annealing on Si pillars bigger than 50 nm in width, no proof of strain partitioning

  13. Geometric structure of thin SiO xN y films on Si(100)

    Behrens, K.-M.; Klinkenberg, E.-D.; Finster, J.; Meiwes-Broer, K.-H.

    1998-05-01

    Thin films of amorphous stoichometric SiO xN y are deposited on radiation-heated Si(100) by rapid thermal low-pressure chemical vapour deposition. We studied the whole range of possible compositions. In order to determine the geometric structure, we used EXAFS and photoelectron spectroscopy. Tetrahedrons constitute the short-range units with a central Si atom connected to N and O. The distribution of the possible tetrahedrons can be described by a mixture of the Random Bonding Model and the Random Mixture Model. For low oxygen contents x/( x+ y)≤0.3, the geometric structure of the film is almost the structure of a-Si 3N 4, with the oxygen preferably on top of Si-N 3 triangles. Higher oxygen contents induce changes in the bond lengths, bond angles and coordination numbers.

  14. Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

    Zlateva, G; Atanassov, A; Baleva, M; Nikolova, L; Abrashev, M V

    2007-01-01

    An orientational growth of the Mg 2 Si lattice relative to the Si lattice is considered assuming minimum mismatch of their lattice parameters. The Raman scattering cross-sections are calculated for the four possible orientations of the Mg 2 Si lattice positioned in this way. The integral intensity ratios for the F 2g mode of Mg 2 Si in different polarization configurations, obtained from the experimental spectra, are compared with the calculated ratios. It is found that the Mg 2 Si nanolayer's morphology is sensitive to the implantation energy, which determines both the peak Mg concentration in the initial implantation profile and its position in the sample depth. At a peak concentration of the order of the stoichiometric concentration, the layers are highly oriented. When the peak concentration is higher and the peak is placed closer to the surface, the layers are polycrystalline

  15. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  16. Elevated Temperature Properties of Commercially Available NITE-SiC/SiC Composites

    Choi, Y.B.; Hinoki, T.; Kohyama, A.

    2007-01-01

    Full text of publication follows: Continuous fiber-reinforced ceramic matrix composites (CMCs) have been expected as a new type of material having high fracture resistance up to a high temperature. In recent years, there have been extensive efforts in our research group to develop high performance SiC/SiC composites for energy applications, where improvements in mechanical properties and damage resistance by innovative new fabrication process with emphasis on interface improvement have been greatly accomplished. One of the most outstanding accomplishments is the Nano-powder Infiltration and Transient Eutectic (NITE) process using PyC coated Tyranno-SA fibers. For making SiC/SiC composites more attractive and competitive for high temperature structural components and for other industrial applications, one of the key issues is to demonstrate its reliability and safety under severe environments. Also to demonstrate the potential to produce SiC/SiC by NITE process from large scale production line at industries is very important. This paper provides fundamental database of mechanical properties and microstructure of Cera-NITE, the trade name of NITE-SiC/SiC composites. The mechanical properties were evaluated by uni-axial tensile test from room temperature to high temperatures. The tensile properties, including elastic modulus, PLS and ultimate tensile strength, are superior to those of other conventional SiC/SiC composites. The macroscopic observation of Cera-NITE indicated high density as planned with almost no-porosity and cracks. Furthermore, Cera-NITE showed outstanding microstructural uniformity. The characteristic variation coming from the sampling location was hardly observed.. Further information about database of properties and microstructure at evaluated temperature will be provided. (authors)

  17. Microhardness evaluation alloys Hf-Si-B; Avaliacao de microdureza de ligas Hf-Si-B

    Gigolotti, Joao Carlos Janio; Costa, Eliane Fernandes Brasil [Centro Universitario de Volta Redonda (UNIFOA), Volta Redonda, RJ (Brazil); Nunes, Carlos Angelo; Rocha, Elisa Gombio; Coelho, Gilberto Carvalho, E-mail: carlosjanio@uol.com.br, E-mail: eliane-costabrasi@hotmail.com, E-mail: cnunes@demar.eel.usp.br, E-mail: elisarocha@alunos.eel.usp.br, E-mail: coelho@demar.eel.usp.br [Universidade de Sao Paulo (USP), Lorena, SP (Brazil)

    2014-08-15

    The technological advance has generated increasing demand for materials that can be used under high temperature, what includes intermetallic MR-Si-B (MR = refractory metal) alloys with multiphase structures, that can also be applied in oxide environments. Thus, this work had for objective the micro hardness study of the Hf-Si-B system alloys, heat treated at 1600 deg C, in the Hf rich region. Hf-Si-B alloys had been produced with blades of Hf (min. 99.8%), Si (min. 99.998%) and B (min. 99.5%), in the voltaic arc furnace and heat treated at 1600 deg C under argon atmosphere. The relationship of the phases had been previously identified by X-ray diffraction and contrast in backscattered electron imaging mode. The alloys had their hardness analyzed by method Vickers (micro hardness) with load of 0.05 kgf and 0.2 kgf and application time of 20 s. The results, obtained from the arithmetic mean of measurements for each alloy on the heterogeneous region, showed a mean hardness of 11.08 GPA, with small coefficient of variation of 3.8%. The borides HfB2 (19.34 GPa) e HfB - 11.76 GPa, showed the hardness higher than the silicides Hf2Si (8.57 GPa), Hf5Si3 (9.63 GPa), Hf3Si2 (11.66 GPa), Hf5Si4 (10.00 GPa), HfSi (10.02 GPa) e HfSi2 (8.61 GPa). (author)

  18. A TEM study of strained SiGe/Si and related heteroepitaxial structures

    Benedetti, Alessandro

    2002-01-01

    The role of SiGe/Si heterostructures and related materials has become increasingly important within the last few decades. In order to increase the scale of integration, however, devices with active elements not larger than few tens of nanometer have been recently introduced. There is, therefore, a strong need for an analytical technique capable of giving information about submicron-sized components. An investigation on a nanometre scale can be performed by the combination of a fully equipped Transmission Electron Microscope (TEM) with a Field Emission Gun (PEG) electron source, which enables one to use a wide range of analytical techniques with an electron probe as small as 0.5 nm. In this work, two different types of SiGe/Si-based devices were investigated. Strained-Si n-channel MOSFETs. The use of Strained-Si n-channel grown on SiGe should improve both carrier mobility and transconductance with respect to conventional MOSFETs. Materials analysed in this work showed an extremely high transconductance but a rather low mobility. In order to relate their microstructural properties to their electrical performance, as well as to improve the device design, a full quantitative and qualitative structural characterisation was performed. SiGe Multiple Quantum Wells (MQW) IR detectors Light detection is achieved by collecting the photogenerated carriers, injected from the SiGe QWs layers into the Si substrate. A key factor is the Ge profile across a single QW, since it governs the band structure and therefore the device performances. Four different TEM techniques were used to determine the Ge distribution across a single well, showing an overall good agreement among the results. The Ge profiles broadening, consistent with data available in literature, was successfully explained and theoretically predicted by the combined effect of Ge segregation and gas dwell times within the reactor. (author)

  19. Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Delabie, Annelies; Billen, Arne [KU Leuven, Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Dekkers, Harold; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Caymax, Matty [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [KU Leuven, Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Heyns, Marc [KU Leuven, Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); IMEC, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-01-01

    Highlights: • Atomic layer is deposited by O{sub 3} chemisorption reaction on H-terminated Si(100). • O-content has critical impact on the epitaxial thickness of the above-deposited Si. • Oxygen atoms at dimer/back bond configurations enable epitaxial Si on O atomic layer. • Oxygen atoms at hydroxyl and more back bonds, disable epitaxial Si on O atomic layer. - Abstract: Epitaxial Si-O superlattices consist of alternating periods of crystalline Si layers and atomic layers of oxygen (O) with interesting electronic and optical properties. To understand the fundamentals of Si epitaxy on O atomic layers, we investigate the O surface species that can allow epitaxial Si chemical vapor deposition using silane. The surface reaction of ozone on H-terminated Si(100) is used for the O deposition. The oxygen content is controlled precisely at and near the atomic layer level and has a critical impact on the subsequent Si deposition. There exists only a small window of O-contents, i.e. 0.7–0.9 atomic layers, for which the epitaxial deposition of Si can be realized. At these low O-contents, the O atoms are incorporated in the Si-Si dimers or back bonds (-OSiH), with the surface Si atoms mainly in the 1+ oxidation state, as indicated by infrared spectroscopy. This surface enables epitaxial seeding of Si. For O-contents higher than one atomic layer, the additional O atoms are incorporated in the Si-Si back bonds as well as in the Si-H bonds, where hydroxyl groups (-Si-OH) are created. In this case, the Si deposition thereon becomes completely amorphous.

  20. SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers

    Vieira, E. M. F.; Toudert, J.; Rolo, A. G.; Parisini, A.; Leitão, J. P.; Correia, M. R.; Franco, N.; Alves, E.; Chahboun, A.; Martín-Sánchez, J.; Serna, R.; Gomes, M. J. M.

    2017-08-01

    In this work, we report on the production of regular (SiGe/SiO2)20 multilayer structures by conventional RF-magnetron sputtering, at 350 °C. Transmission electron microscopy, scanning transmission electron microscopy, raman spectroscopy, and x-ray reflectometry measurements revealed that annealing at a temperature of 1000 °C leads to the formation of SiGe nanocrystals between SiO2 thin layers with good multilayer stability. Reducing the nominal SiGe layer thickness (t SiGe) from 3.5-2 nm results in a transition from continuous SiGe crystalline layer (t SiGe ˜ 3.5 nm) to layers consisting of isolated nanocrystals (t SiGe ˜ 2 nm). Namely, in the latter case, the presence of SiGe nanocrystals ˜3-8 nm in size, is observed. Spectroscopic ellipsometry was applied to determine the evolution of the onset in the effective optical absorption, as well as the dielectric function, in SiGe multilayers as a function of the SiGe thickness. A clear blue-shift in the optical absorption is observed for t SiGe ˜ 2 nm multilayer, as a consequence of the presence of isolated nanocrystals. Furthermore, the observed near infrared values of n = 2.8 and k = 1.5 are lower than those of bulk SiGe compounds, suggesting the presence of electronic confinement effects in the nanocrystals. The low temperature (70 K) photoluminescence measurements performed on annealed SiGe/SiO2 nanostructures show an emission band located between 0.7-0.9 eV associated with the development of interface states between the formed nanocrystals and surrounding amorphous matrix.

  1. Correction of SiPM temperature dependencies

    Kaplan, A.

    2009-01-01

    The performance of a high granular analogue hadronic calorimeter (AHCAL) using scintillator tiles with built-in Silicon Photomultiplier (SiPM) readout is reported. A muon beam is used for the minimum ionizing particle (MIP) based calibration of the single cells. The calibration chain including corrections for the non-linearity of the SiPM is presented. The voltage and temperature dependencies of the SiPM signal have been investigated using the versatile LED system of the AHCAL. Monitoring and correction methods are discussed. Measurements from the operation 2006 and 2007 at the CERN SPS test beam and data provided by the Institute for Theoretical and Experimental Physics (ITEP) in Moscow are compared.

  2. Fluorine incorporation during Si solid phase epitaxy

    Impellizzeri, G.; Mirabella, S.; Romano, L.; Napolitani, E.; Carnera, A.; Grimaldi, M.G.; Priolo, F.

    2006-01-01

    We have investigated the F incorporation and segregation in preamorphized Si during solid phase epitaxy (SPE) at different temperatures and for several implanted-F energies and fluences. The Si samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.07-5 x 10 14 F/cm 2 ). Subsequently, the samples were regrown by SPE at different temperatures: 580, 700 and 800 deg. C. We have found that the amount of F incorporated after SPE strongly depends on the SPE temperature and on the energy and fluence of the implanted-F, opening the possibility to tailor the F profile during SPE

  3. Heteroepitaxial growth of SiC films by carbonization of polyimide Langmuir-Blodgett films on Si

    Goloudina S.I.

    2017-01-01

    Full Text Available High quality single crystal SiC films were prepared by carbonization of polyimide Langmuir-Blodgett films on Si substrate. The films formed after annealing of the polyimide films at 1000°C, 1100°C, 1200°C were studied by Fourier transform-infrared (FTIR spectroscopy, X-ray diffraction (XRD, Raman spectroscopy, transmission electon microscopy (TEM, transmission electron diffraction (TED, and scanning electron microscopy (SEM. XRD study and HRTEM cross-section revealed that the crystalline SiC film begins to grow on Si (111 substrate at 1000°C. According to the HRTEM cross-section image five planes in 3C-SiC (111 film are aligned with four Si(111 planes at the SiC/Si interface. It was shown the SiC films (35 nm grown on Si(111 at 1200°C have mainly cubic 3C-SiC structure with a little presence of hexagonal polytypes. Only 3C-SiC films (30 nm were formed on Si (100 substrate at the same temperature. It was shown the SiC films (30-35 nm are able to cover the voids in Si substrate with size up to 10 μm.

  4. SiC/SiC composite fabricated with carbon nanotube interface layer and a novel precursor LPVCS

    Zhao, Shuang, E-mail: zhsh6007@126.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Zhou, Xingui; Yu, Jinshan [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073 (China); Mummery, Paul [School of Mechanical, Aerospace, and Civil Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2014-02-15

    Highlights: • The CNTs were distributed uniformly on the SiC fibers in the fabric by CVD process. • The microstructural evolution of the CNTs interface coating was studied. • The closed porosity was investigated by X-ray tomography. • The liquid precursor LPVCS exhibited high densification efficiency. - Abstract: Continuous SiC fiber reinforced SiC matrix composites (SiC/SiC) have been studied as promising candidate materials for nuclear applications. Three-dimensional SiC/SiC composite was fabricated via polymer impregnation and pyrolysis (PIP) process using carbon nanotubes (CNTs) as the interface layer and LPVCS as the polymer precursor. The microstructural evolution of the fiber/matrix interface was studied. The porosity, mechanical properties, thermal and electrical conductivities of the SiC/SiC composite were investigated. The results indicated that the high densification efficiency of the liquid precursor LPVCS resulted in a low porosity of the SiC/SiC composite. The SiC/SiC composite exhibited non-brittle fracture behavior, however, bending strength and fracture toughness of the composite were relatively low because of the absence of CNTs as the interface layer. The thermal and electrical conductivities of the SiC/SiC composite were low enough to meet the requirements desired for flow channel insert (FCI) applications.

  5. Bone histomorphometry of broilers submitted to different phosphorus sources in growing and finisher rations Histomorfometria óssea de frangos de corte submetidos a diferentes fontes de fósforo nas rações de crescimento e terminação

    Rafael Carvalho de Oliveira

    2006-10-01

    , alongamento da ROI, ângulo da ROI, os respectivos desvios-padrão dessas medidas, a entropia dos ângulos das ROI e uma medida orientada de textura (lacunaridade. A substituição do fosfato dicálcico, nas rações de crescimento e engorda, por qualquer uma das outras fontes de fósforo testadas, causou mudanças significativas na histomorfologia do córtex ósseo dos frangos de corte, tais como: menor porcentagem de osso por área, aumento da área das lacunas e menor homogeneidade da matriz. As alterações foram mais pronunciadas nos tratamentos que receberam fosfato de rocha de Araxá, fonte de maior nível de flúor, do que nos tratamentos com superfosfato simples, superfosfato triplo e fosfato monoamônio, os quais foram semelhantes entre si.

  6. Sensing performance of plasma-enhanced chemical vapor deposition SiC-SiO2-SiC horizontal slot waveguides

    Pandraud, G.; Margallo-Balbas, E.; Sarro, P.M.

    2012-01-01

    We have studied, for the first time, the sensing capabilities of plasma-enhanced chemical vapor deposition (PECVD) SiC-SiO2-SiC horizontal slot waveguides. Optical propagation losses were measured to be 23.9 dB?cm for the quasi-transverse magnetic mode. To assess the potential of this device as a

  7. Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation

    Dhiman, Rajnish; Rana, Kuldeep; Bengu, Erman

    2012-01-01

    We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process...

  8. SiC Seeded Crystal Growth

    Glass, R. C.; Henshall, D.; Tsvetkov, V. F.; Carter, C. H., Jr.

    1997-07-01

    The availability of relatively large (30 mm) SiC wafers has been a primary reason for the renewed high level of interest in SiC semiconductor technology. Projections that 75 mm SiC wafers will be available in 2 to 3 years have further peaked this interest. Now both 4H and 6H polytypes are available, however, the micropipe defects that occur to a varying extent in all wafers produced to date are seen by many as preventing the commercialization of many types of SiC devices, especially high current power devices. Most views on micropipe formation are based around Frank's theory of a micropipe being the hollow core of a screw dislocation with a huge Burgers vector (several times the unit cell) and with the diameter of the core having a direct relationship with the magnitude of the Burgers vector. Our results show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method. Additional considerations such as polytype variations, dislocations and both impurity and diameter control add to the complexity of producing high quality wafers. Recent results at Cree Research, Inc., including wafers with micropipe densities of less than 1 cm - 2 (with 1 cm2 areas void of micropipes), indicate that micropipes will be reduced to a level that makes high current devices viable and that they may be totally eliminated in the next few years. Additionally, efforts towards larger diameter high quality substrates have led to production of 50 mm diameter 4H and 6H wafers for fabrication of LEDs and the demonstration of 75 mm wafers. Low resistivity and semi-insulating electrical properties have also been attained through improved process and impurity control. Although challenges remain, the industry continues to make significant progress towards large volume SiC-based semiconductor fabrication.

  9. Si(Li) X-ray detector

    Yuan Xianglin; Li Zhiyong; Hong Xiuse

    1990-08-01

    The fabrication technology of the 10∼80 mm 2 Si(Li) X-ray detectors are described and some problems concerning technology and measurement are discussed. The specifications of the detectors are shown as well. The Si(Li) X-ray detector is a kind of low energy X-ray detectors. Owing to very high energy resolution, fine linearity and high detection efficiency in the range of low energy X-rays, it is widely used in the fields of nuclear physics, medicine, geology and environmental protection, etc,. It is also a kernel component for the scanning electron microscope and X-ray fluorescence analysis systems

  10. Three Crystalline Polymorphs of KFeSi04, Potassium Ferrisilicate

    Bentzen, Janet Jonna

    1983-01-01

    Orthorhombic α-KFeSi04 ( a =0.5478, b =0.9192, c =0.8580 nm), hexagonal β-KFeSiO4 (a =0.5309, c =0.8873 nm), and hexagonal γ-KFeSi04 (a =0.5319, c =0.8815 nm) were synthesized by devitrification of KFeSiO4 glass. Powder X-ray diffraction data are given for all three polymorphs. Alpha KFeSiO4, the......, and synthetic kaliophilite, KAISiO4, respectively, and it is proposed that β- and λ-KFeSiO4 are linked by Si-Fe order-disorder. Beta KFeSiO4 transforms slowly into α-KFeSi04 above 910°C but the transformation was not shown to be reversible in the present dry-heating experiments....

  11. Ag on Si(111) from basic science to application

    Belianinov, Aleksey [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    In our work we revisit Ag and Au adsorbates on Si(111)-7x7, as well as experiment with a ternary system of Pentacene, Ag and Si(111). Of particular interest to us is the Si(111)-(√3x√3)R30°}–Ag (Ag-Si-√3 hereafter). In this thesis I systematically explore effects of Ag deposition on the Ag-Si-√3 at different temperatures, film thicknesses and deposition fluxes. The generated insight of the Ag system on the Si(111) is then applied to generate novel methods of nanostructuring and nanowire growth. I then extend our expertise to the Au system on the Ag-Si(111) to gain insight into Au-Si eutectic silicide formation. Finally we explore behavior and growth modes of an organic molecule on the Ag-Si interface.

  12. Recent progress in Si thin film technology for solar cells

    Kuwano, Yukinori; Nakano, Shoichi; Tsuda, Shinya

    1991-11-01

    Progress in Si thin film technology 'specifically amorphous Si (a-Si) and polycrystalline Si (poly-Si) thin film' for solar cells is summarized here from fabrication method, material, and structural viewpoints. In addition to a-Si, primary results on poly-Si thin film research are discussed. Various applications for a-Si solar cells are mentioned, and consumer applications and a-Si solar cell photovoltaic systems are introduced. New product developments include see-through solar cells, solar cell roofing tiles, and ultra-light flexible solar cells. As for new systems, air conditioning equipment powered by solar cells is described. Looking to the future, the proposed GENESIS project is discussed.

  13. Simulation of electron transmittance and tunnel current in n{sup +} Poly-Si/HfSiO{sub x}N/Trap/SiO{sub 2}/Si(100) capacitors using analytical and numerical approaches

    Noor, Fatimah A., E-mail: fatimah@fi.itb.ac.id; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal [Physics of Electronic Materials Research Division Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung Jalan Ganesa 10, Bandung 40132 (Indonesia)

    2015-04-16

    In this paper, we discuss the electron transmittance and tunneling current in high-k-based-MOS capacitors with trapping charge by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies represented by an electron velocity in the gate. The HfSiO{sub x}N/SiO{sub 2} dual ultrathin layer is used as the gate oxide in an n{sup +} poly- Si/oxide/Si capacitor to replace SiO{sub 2}. The main problem of using HfSiO{sub x}N is the charge trapping formed at the HfSiO{sub x}N/SiO{sub 2} interface that can influence the performance of the device. Therefore, it is important to develop a model taking into account the presence of electron traps at the HfSiO{sub x}N/SiO{sub 2} interface in the electron transmittance and tunneling current. The transmittance and tunneling current in n{sup +} poly- Si/HfSiO{sub x}N/trap/SiO2/Si(100) capacitors are calculated by using Airy wavefunctions and a transfer matrix method (TMM) as analytical and numerical approaches, respectively. The transmittance and tunneling current obtained from the Airy wavefunction are compared to those computed by the TMM. The effects of the electron velocity on the transmittance and tunneling current are also discussed.

  14. Revision of the Li13Si4 structure

    Thomas F. Fässler

    2013-12-01

    Full Text Available Besides Li17Si4, Li16.42Si4, and Li15Si4, another lithium-rich representative in the Li–Si system is the phase Li13Si4 (tridecalithium tetrasilicide, the structure of which has been determined previously [Frank et al. (1975. Z. Naturforsch. Teil B, 30, 10–13]. A careful analysis of X-ray diffraction patterns of Li13Si4 revealed discrepancies between experimentally observed and calculated Bragg positions. Therefore, we redetermined the structure of Li13Si4 on the basis of single-crystal X-ray diffraction data. Compared to the previous structure report, decisive differences are (i the introduction of a split position for one Li site [occupancy ratio 0.838 (7:0.162 (7], (ii the anisotropic refinement of atomic displacement parameters for all atoms, and (iii a high accuracy of atom positions and unit-cell parameters. The asymmetric unit of Li13Si4 contains two Si and seven Li atoms. Except for one Li atom situated on a site with symmetry 2/m, all other atoms are on mirror planes. The structure consists of isolated Si atoms as well as Si–Si dumbbells surrounded by Li atoms. Each Si atom is either 12- or 13-coordinated. The isolated Si atoms are situated in the ab plane at z = 0 and are strictly separated from the Si–Si dumbbells at z = 0.5.

  15. Study of astrophysically important resonant states in 26Si by the 28Si(4He,6He)26Si reaction

    Kwon, Young Kwan; Lee, C. S.; Moon, J. Y.; Lee, J. H.; Kim, J. Y.; Kubono, S.; Iwasa, N.; Inafiki, K.; Yamaguchi, H.; He, J. J.; Saito, A.; Wakabayashi, Y.; Fukijawa, H.; Amadio, G.; Khiem, L. H.; Tanaka, M.; Chen, A.; Kato, S.

    PoS(NIC-IX)024 , b, H. Yamaguchia, J. J. Hea , A. Saitoa , Y. Wakabayashia, H. Fujikawaa, G. The emission of 1.809 MeV gamma-ray from the first excited state of 26 Mg followed by beta- decay of 26 Al in its ground state (denoted as 26 Alg.s. ) has been identified by gamma-ray telescopes such the Compton Gamma-Ray Observatory (CGRO) [1]. To resolve controversy over the pos- sible sources of the observational 1.809 MeV gamma-rays, one needs accurate knowledge of the production rate of 26 Al. The 25 Al(p,γ)26Si reaction which is the competition reaction for produc- tion of 26 Alg.s. is one of the important subjects to be investigated. In this work, the astrophysically important 26 Si states above the proton threshold were studied via the 28 Si(4 He,6 He)26 Si reaction. We have preformed an angular distribution measurement using the high resolution QDD spectro- graph (PA) at Center for Nuclear Study (CNS), University of Tokyo. The experimental results and data analysis will be presented.

  16. Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

    Albani, Marco; Marzegalli, Anna; Bergamaschini, Roberto; Mauceri, Marco; Crippa, Danilo; La Via, Francesco; von Känel, Hans; Miglio, Leo

    2018-05-01

    The exceptionally large thermal strain in few-micrometers-thick 3C-SiC films on Si(111), causing severe wafer bending and cracking, is demonstrated to be elastically quenched by substrate patterning in finite arrays of Si micro-pillars, sufficiently large in aspect ratio to allow for lateral pillar tilting, both by simulations and by preliminary experiments. In suspended SiC patches, the mechanical problem is addressed by finite element method: both the strain relaxation and the wafer curvature are calculated at different pillar height, array size, and film thickness. Patches as large as required by power electronic devices (500-1000 μm in size) show a remarkable residual strain in the central area, unless the pillar aspect ratio is made sufficiently large to allow peripheral pillars to accommodate the full film retraction. A sublinear relationship between the pillar aspect ratio and the patch size, guaranteeing a minimal curvature radius, as required for wafer processing and micro-crack prevention, is shown to be valid for any heteroepitaxial system.

  17. Mechanical properties of MeV ion-irradiated SiC/SiC composites characterized by indentation technique

    Park, J.Y.; Park, K.H.; Kim, W.; Kishimoto, H.; Kohyama, A.

    2007-01-01

    Full text of publication follows: SiC/SiC composites have been considered as a structural material for advanced fusion concepts. In the core of fusion reactor, those SiC/SiC composites are experienced the complex attacks such as strong neutron, high temperature and transmuted gases. One of the vital data for designing the SiC/SiC composites to the fusion reactor is mechanical properties under the severe neutron irradiation. In this work, various SiC/SiC composites were prepared by the different fabrication processes like CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressed method. The expected neutron irradiation was simulated by a silicon self-ion irradiation at a DuET facility; Dual-beam for Energy Technologies, Kyoto University. The irradiation temperature were 600 deg. C and 1200 deg. C, and the irradiation does were 5 dpa and 20 dpa, respectively. The 5.1 MeV Si ions were irradiated to the intrinsic CVI-SiC, SiC whisker reinforced SiC and SiC composites produced by hot-press method. The mechanical properties like hardness, elastic modulus and fracture toughness were characterized by an indentation technique. The ion irradiation caused the increase of the hardness and fracture toughness, which was dependent on the irradiation temperature. SiC whisker reinforcement in the SiC matrix accelerated the increase of the fracture toughness by the ion irradiation. For SiC/SiC composites after the ion irradiation, this work will provide the additional data for the mechanical properties as well as the effect of SiC whisker reinforcement. (authors)

  18. C and Si delta doping in Ge by CH_3SiH_3 using reduced pressure chemical vapor deposition

    Yamamoto, Yuji; Ueno, Naofumi; Sakuraba, Masao; Murota, Junichi; Mai, Andreas; Tillack, Bernd

    2016-01-01

    C and Si delta doping in Ge are investigated using a reduced pressure chemical vapor deposition system to establish atomic-order controlled processes. CH_3SiH_3 is exposed at 250 °C to 500 °C to a Ge on Si (100) substrate using H_2 or N_2 carrier gas followed by a Ge cap layer deposition. At 350 °C, C and Si are uniformly adsorbed on the Ge surface and the incorporated C and Si form steep delta profiles below detection limit of SIMS measurement. By using N_2 as carrier gas, the incorporated C and Si doses in Ge are saturated at one mono-layer below 350 °C. At this temperature range, the incorporated C and Si doses are nearly the same, indicating CH_3SiH_3 is adsorbed on the Ge surface without decomposing the C−Si bond. On the other hand, by using H_2 as carrier gas, lower incorporated C is observed in comparison to Si. CH_3SiH_3 injected with H_2 carrier gas is adsorbed on Ge without decomposing the C−Si bond and the adsorbed C is reduced by dissociation of the C−Si bond during temperature ramp up to 550 °C. The adsorbed C is maintained on the Ge surface in N_2 at 550 °C. - Highlights: • C and Si delta doping in Ge is investigated using RPCVD system by CH_3SiH_3 exposure. • Atomically flat C and Si delta layers are fabricated at 350 °C. • Incorporated C and Si doses are saturated at one mono-layer below 350 °C. • CH_3SiH_3 adsorption occurred without decomposing C−Si bond. • Adsorbed C is desorbed due to dissociation by hydrogen during postannealing at 550 °C.

  19. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    Lynn, K.G.; Asoka-Kumar, P.

    1991-01-01

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO 2 /Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO 2 /Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO 2 /Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. This study uses the positrons as a ''sensitive'', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. We also describe a new way of characterizing the changes in the density of the interface states under a low-temperature annealing using positrons. 9 refs., 6 figs

  20. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    Lynn, K. G.; Asoka-Kumar, P.

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.

  1. Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

    Hecker, M; Roelke, M; Hermann, P; Zschech, E; Vartanian, V

    2010-01-01

    Strained silicon underneath the field-effect transistor gate increases significantly the charge carrier mobility and thus improves the performance of leading-edge Complementary Metal Oxide Semiconductor (CMOS) devices. For better understanding of the structure-strain relationship on the nanoscale and for optimization of device structures, the measurement of the local strain state has become essential. Raman spectroscopy is used in the present investigation to analyze the strain distribution in and close to silicon/embedded silicon-germanium (SiGe) line structures in conjunction with strain modeling applying finite element analysis. Both experimental results and modeling indicate the impact of geometry on the stress state. An increase of compressive stress within the Si lines is obtained for increasing SiGe line widths and decreasing Si line widths. The stress state within the Si lines is shown to be a mixed one deviating from a pure uniaxial state. Underneath the SiGe cavities, the presence of a tensile stress was observed. To investigate a procedure to scale down the spatial resolution of the Raman measurements, tip-enhanced Raman scattering experiments have been performed on free-standing SiGe lines with 100nm line width and line distance. The results show superior resolution and strain information not attainable in conventional Raman scans.

  2. Progress in blanket designs using SiCf/SiC composites

    Giancarli, L.; Golfier, H.; Nishio, S.; Raffray, R.; Wong, C.; Yamada, R.

    2002-01-01

    This paper summarizes the most recent design activities concerning the use of SiC f /SiC composite as structural material for fusion power reactor breeding blanket. Several studies have been performed in the past. The most recent proposals are the TAURO blanket concept in the European Union, the ARIES-AT concept in the US, and DREAM concept in Japan. The first two concepts are self-cooled lithium-lead blankets, while DREAM is an helium-cooled beryllium/ceramic blanket. Both TAURO and ARIES-AT blankets are essentially formed by a SiC f /SiC box acting as a container for the lithium-lead which has the simultaneous functions of coolant, tritium breeder, neutron multiplier and, finally, tritium carrier. The DREAM blanket is characterized by small modules using pebble beds of Be as neutron multiplier material, of Li 2 O (or other lithium ceramics) as breeder material and of SiC as shielding material. The He coolant path includes a flow through the pebble beds and a porous partition wall. For each blanket, this paper describes the main design features and performances, the most recent design improvements, and the proposed manufacturing routes in order to identify specific issues and requirements for the future R and D on SiC f /SiC

  3. Raman and photoluminescence spectroscopy of SiGe layer evolution on Si(100) induced by dewetting

    Shklyaev, A. A.; Volodin, V. A.; Stoffel, M.; Rinnert, H.; Vergnat, M.

    2018-01-01

    High temperature annealing of thick (40-100 nm) Ge layers deposited on Si(100) at ˜400 °C leads to the formation of continuous films prior to their transformation into porous-like films due to dewetting. The evolution of Si-Ge composition, lattice strain, and surface morphology caused by dewetting is analyzed using scanning electron microscopy, Raman, and photoluminescence (PL) spectroscopies. The Raman data reveal that the transformation from the continuous to porous film proceeds through strong Si-Ge interdiffusion, reducing the Ge content from 60% to about 20%, and changing the stress from compressive to tensile. We expect that Ge atoms migrate into the Si substrate occupying interstitial sites and providing thereby the compensation of the lattice mismatch. Annealing generates only one type of radiative recombination centers in SiGe resulting in a PL peak located at about 0.7 and 0.8 eV for continuous and porous film areas, respectively. Since annealing leads to the propagation of threading dislocations through the SiGe/Si interface, we can tentatively associate the observed PL peak to the well-known dislocation-related D1 band.

  4. From plastic to elastic stress relaxation in highly mismatched SiGe/Si heterostructures

    Isa, Fabio; Salvalaglio, Marco; Dasilva, Yadira Arroyo Rojas; Jung, Arik; Isella, Giovanni; Erni, Rolf; Niedermann, Philippe; Gröning, Pierangelo; Montalenti, Francesco; Känel, Hans von

    2016-01-01

    We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation process in micro-structured compositionally graded alloys. We focus on the pivotal SiGe/Si(001) system employing patterned Si substrates at the micrometre-size scale to address the distribution of threading and misfit dislocations within the heterostructures. SiGe alloys with linearly increasing Ge content were deposited by low energy plasma enhanced chemical vapour deposition resulting in isolated, tens of micrometre tall 3D crystals. We demonstrate that complete elastic relaxation is achieved by appropriate choice of the Ge compositional grading rate and Si pillar width. We investigate the nature and distribution of dislocations along the [001] growth direction in SiGe crystals by transmission electron microscopy, chemical defect etching and etch pit counting. We show that for 3 μm wide Si pillars and a Ge grading rate of 1.5% μm −1 , only misfit dislocations are present while their fraction is reduced for higher Ge grading rates and larger structures due to dislocation interactions. The experimental results are interpreted with the help of theoretical calculations based on linear elasticity theory describing the competition between purely elastic and plastic stress relaxation with increasing crystal width and Ge compositional grading rate.

  5. Ni3Si(Al)/a-SiOx core shell nanoparticles: characterization, shell formation, and stability

    Pigozzi, G.; Mukherji, D.; Gilles, R.; Barbier, B.; Kostorz, G.

    2006-08-01

    We have used an electrochemical selective phase dissolution method to extract nanoprecipitates of the Ni3Si-type intermetallic phase from two-phase Ni-Si and Ni-Si-Al alloys by dissolving the matrix phase. The extracted nanoparticles are characterized by transmission electron microscopy, energy-dispersive x-ray spectrometry, x-ray powder diffraction, and electron powder diffraction. It is found that the Ni3Si-type nanoparticles have a core-shell structure. The core maintains the size, the shape, and the crystal structure of the precipitates that existed in the bulk alloys, while the shell is an amorphous phase, containing only Si and O (SiOx). The shell forms around the precipitates during the extraction process. After annealing the nanoparticles in nitrogen at 700 °C, the tridymite phase recrystallizes within the shell, which remains partially amorphous. In contrast, on annealing in air at 1000 °C, no changes in the composition or the structure of the nanoparticles occur. It is suggested that the shell forms after dealloying of the matrix phase, where Si atoms, the main constituents of the shell, migrate to the surface of the precipitates.

  6. Superconducting single electron transistor for charge sensing in Si/SiGe-based quantum dots

    Yang, Zhen

    Si-based quantum devices, including Si/SiGe quantum dots (QD), are promising candidates for spin-based quantum bits (quits), which are a potential platform for quantum information processing. Meanwhile, qubit readout remains a challenging task related to semiconductor-based quantum computation. This thesis describes two readout devices for Si/SiGe QDs and the techniques for developing them from a traditional single electron transistor (SET). By embedding an SET in a tank circuit and operating it in the radio-frequency (RF) regime, a superconducting RF-SET has quick response as well as ultra high charge sensitivity and can be an excellent charge sensor for the QDs. We demonstrate such RF-SETs for QDs in a Si/SiGe heterostructure. Characterization of the SET in magnetic fields is studied for future exploration of advanced techniques such as spin detection and spin state manipulation. By replacing the tank circuit with a high-quality-factor microwave cavity, the embedded SET will be operated in the supercurrent regime as a single Cooper pair transistor (CPT) to further increase the charge sensitivity and reduce any dissipation. The operating principle and implementation of the cavity-embedded CPT (cCPT) will be introduced.

  7. Characterization of Si(112) and In/Si(112) studied by SPA-LEED

    Hoecker, Jan; Speckmann, Moritz; Schmidt, Thomas; Falta, Jens [Institute of Solid State Physics, University of Bremen, 28359 Bremen (Germany)

    2010-07-01

    High index surfaces are of strong interest in todays research because of the possibility to grow low dimensional structures. It has for instance already been shown that the adsorption of Ga can induce the formation of 1D metal chains on Si(112) (cf. Snijders et al., PRB 72, 2005). In this work we investigated the clean Si(112) surface and the adsorption of In on Si(112) to establish an analogy to Ga/Si(112) using spot profile analyzing low energy electron diffraction (SPA-LEED). By means of reciprocal space mapping we determined the bare Si(112) surface to be decomposed into alternating (5512) and (111) facets in [1 anti 10] direction with (2 x 1) and (7 x 7) reconstruction, respectively (cf. Baski et al., Surf. Sci. 392, 1997). With SPA-LEED we were able to observe the decreasing intensity of the facet spots in-situ while depositing In on Si(112) and thus reveal the smoothening of the surface due to the deposition of In. At saturation coverage we found a (3.x1) reconstruction, where x is dependent on the deposition temperature and changes from x=7 at 400 C to x=5 at 500 C. This leads us to the assumption that the reconstruction is not incommensurate but a mixture of (3 x 1) and (4 x 1) building blocks, which is very similar to the super structure of Ga on Si(112).

  8. Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

    Tarasov, I. A.; Visotin, M. A.; Aleksandrovsky, A. S.; Kosyrev, N. N.; Yakovlev, I. A.; Molokeev, M. S.; Lukyanenko, A. V.; Krylov, A. S.; Fedorov, A. S.; Varnakov, S. N.; Ovchinnikov, S. G.

    2017-10-01

    This work investigates the Si/Fe flux ratio (2 and 0.34) influence on the growth of β-FeSi2 polycrystalline thin films on Si(100) substrate at 630 °C. Lattice deformations for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi2 single crystal are 1.99% and 1.1% for Si/Fe =2 and Si/Fe =0.34, respectively. Absorption measurements show that the indirect transition ( 0.704 eV) of the Si/Fe =0.34 sample changes to the direct transition with a bandgap value of 0.816 eV for the sample prepared at Si/Fe =2. The absorption spectrum of the Si/Fe =0.34 sample exhibits an additional peak located below the bandgap energy value with the absorption maximum of 0.36 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect the ferromagnetic behavior of the β-FeSi2 polycrystalline films grown at Si/Fe =0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe =2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower absorption peak, is β-FeSi2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe =2 sample.

  9. Thermophysical and mechanical properties of SiC/SiC composites

    Zinkle, S.J.; Snead, L.L.

    1998-01-01

    The key thermophysical and mechanical properties for SiC/SiC composites are summarized, including temperature-dependent tensile properties, elastic constants, thermal conductivity, thermal expansion, and specific heat. The effects of neutron irradiation on the thermal conductivity and dimensional stability (volumetric swelling, creep) of SiC is discussed. The estimated lower and upper temperatures limits for structural applications in high power density fusion applications are 400 and 1000 C due to thermal conductivity degradation and void swelling considerations, respectively. Further data are needed to more accurately determine these estimated temperature limits

  10. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

    De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

    1996-08-01

    This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

  11. Synthesis of Amorphous Powders of Ni-Si and Co-Si Alloys by Mechanical Alloying

    Omuro, Keisuke; Miura, Harumatsu

    1991-05-01

    Amorphous powders of the Ni-Si and Co-Si alloys are synthesized by mechanical alloying (MA) from crystalline elemental powders using a high energy ball mill. The alloying and amorphization process is examined by X-ray diffraction, differential scanning calorimetry (DSC), and scanning electron microscopy. For the Ni-Si alloy, it is confirmed that the crystallization temperature of the MA powder, measured by DSC, is in good agreement with that of the powder sample prepared by mechanical grinding from the cast alloy ingot products of the same composition.

  12. submitter Energy Resolution Of Si/Fe And Si/Pb Electromagnetic Calorimeters

    Bosetti, M; Pensotti, S.; Penzo, A.; Rancoita, P.G.; Rattaggi, M.; Redaelli, M.; Salvato, G.; Terzi, G.

    1993-01-01

    The energy resolution of electromagnetic sampling calorimeters using silicon mosaics as active medium, has been measured for Pb and Fe absorbers at incoming electron energies E of 2, 4, and 6 GeV. The energy resolution, found for the Si/Pb sented by a(E)/E = pling frequency. The energy resolution can be rewritten as a function of the dead area energy losses (D): a(E)/E = (KO + all))% ,/- with KO = (17.6 f 0.3)%, (24.1&0.8)%, for Si/Pb, Si/Fe, respectively; a1 = 1.2f0.3 for both absorbers.

  13. Development of Readout Interconnections for the Si-W Calorimeter of SiD

    Woods, M.; Fields, R.G.; Holbrook, B.; Lander, R.L.; Moskaleva, A.; Neher, C.; Pasner, J.; Tripathi, M.; /UC, Davis; Brau, J.E.; Frey, R.E.; Strom, D.; /Oregon U.; Breidenbach, M.; Freytag, D.; Haller, G.; Herbst, R.; Nelson, T.; /SLAC; Schier, S.; Schumm, B.; /UC, Santa Cruz

    2012-09-14

    The SiD collaboration is developing a Si-W sampling electromagnetic calorimeter, with anticipated application for the International Linear Collider. Assembling the modules for such a detector will involve special bonding technologies for the interconnections, especially for attaching a silicon detector wafer to a flex cable readout bus. We review the interconnect technologies involved, including oxidation removal processes, pad surface preparation, solder ball selection and placement, and bond quality assurance. Our results show that solder ball bonding is a promising technique for the Si-W ECAL, and unresolved issues are being addressed.

  14. GaN growth via HVPE on SiC/Si substrates: growth mechanisms

    Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

    2017-11-01

    The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

  15. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

    Morita, K.; Inomata, Y.; Suemasu, T.

    2006-01-01

    The electrical properties and optical absorption (OA) spectra of undoped BaSi 2 films grown by molecular beam epitaxy were investigated The electron density and mobility of BaSi 2 grown epitaxially on Si(111) were 5 x 10 15 cm -3 and 820 cm 2 /V.s at room temperature, respectively. The conduction-band discontinuity at the BaSi 2 /Si heterojunction was estimated to be 0.7 eV from the current-voltage characteristics of n-BaSi 2 /n-Si isotype diodes. OA spectra were measured on polycrystalline BaSi 2 films grown on transparent fused silica substrates with predeposited polycrystalline Si layer. The indirect absorption edge was derived to be 1.3 eV, and the optical absorption coefficient reached 10 5 cm -1 at 1.5 eV

  16. Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

    Khazaka, Rami; Portail, Marc; Vennéguès, Philippe; Alquier, Daniel; Michaud, Jean François

    2015-01-01

    Graphical abstract: In this contribution, we demonstrated the influence of the 3C-SiC layer on the subsequent growth of Si epilayers. We were able to give a direct evidence that the rotation in the Si epilayer of 90° around the growth direction occurs exactly on the termination of an antiphase boundary in the 3C-SiC layer as shown in the figure above. Thus, increasing the layer thickness of the 3C-SiC leads to a direct improvement of the crystalline quality of the subsequent Si epilayer. (a) Cross-section bright-field TEM image of the Si/3C-SiC layer stack along two 3C-SiC zone axes [1 −1 0] and [1 1 0] (equivalent to [1 −1 1] and [1 1 2] in Si, respectively), (b) dark field image selecting a (2 0 −2) electron diffraction spot indicated by the black circle in the SAED shown as inset, (c) dark field image selecting a (−1 1 −1) electron diffraction spot indicated by the black circle in the SAED shown as inset. The dotted white line in the images show the position of the defect in the 3C-SiC layer. - Abstract: This work presents a structural study of silicon (Si) thin films grown on cubic silicon carbide (3C-SiC) by chemical vapor deposition. The presence of grains rotated by 90° around the growth direction in the Si layer is directly related to the presence of antiphase domains on the 3C-SiC surface. We were able to provide a direct evidence that the 90° rotation of Si grains around the growth direction occurs exactly on the termination of antiphase boundaries (APBs) in 3C-SiC layer. Increasing the 3C-SiC thickness reduces the APBs density on 3C-SiC surface leading to a clear improvement of the uppermost Si film crystal quality. Furthermore, we observed by high resolution plan-view TEM images the presence of hexagonal Si domains limited to few nm in size. These hexagonal Si domains are inclusions in small Si grains enclosed in larger ones rotated by 90°. Finally, we propose a model of grains formation in the Si layer taking into consideration the effect

  17. Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC.

    Jia, Yuping; Sun, Xiaojuan; Shi, Zhiming; Jiang, Ke; Liu, Henan; Ben, Jianwei; Li, Dabing

    2018-05-28

    Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics

    Magdalena Graczyk-Zajac

    2015-02-01

    Full Text Available Within this work we define structural properties of the silicon carbonitride (SiCN and silicon oxycarbide (SiOC ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  19. New Insights into Understanding Irreversible and Reversible Lithium Storage within SiOC and SiCN Ceramics.

    Graczyk-Zajac, Magdalena; Reinold, Lukas Mirko; Kaspar, Jan; Sasikumar, Pradeep Vallachira Warriam; Soraru, Gian-Domenico; Riedel, Ralf

    2015-02-24

    Within this work we define structural properties of the silicon carbonitride (SiCN) and silicon oxycarbide (SiOC) ceramics which determine the reversible and irreversible lithium storage capacities, long cycling stability and define the major differences in the lithium storage in SiCN and SiOC. For both ceramics, we correlate the first cycle lithiation or delithiation capacity and cycling stability with the amount of SiCN/SiOC matrix or free carbon phase, respectively. The first cycle lithiation and delithiation capacities of SiOC materials do not depend on the amount of free carbon, while for SiCN the capacity increases with the amount of carbon to reach a threshold value at ~50% of carbon phase. Replacing oxygen with nitrogen renders the mixed bond Si-tetrahedra unable to sequester lithium. Lithium is more attracted by oxygen in the SiOC network due to the more ionic character of Si-O bonds. This brings about very high initial lithiation capacities, even at low carbon content. If oxygen is replaced by nitrogen, the ceramic network becomes less attractive for lithium ions due to the more covalent character of Si-N bonds and lower electron density on the nitrogen atom. This explains the significant difference in electrochemical behavior which is observed for carbon-poor SiCN and SiOC materials.

  20. Purity and radioactive decay behaviour of industrial 2D-reinforced SiCf/SiC composites

    Scholz, H.W.; Zucchetti, M.; Casteleyn, K.; Adelhelm, C.

    1994-01-01

    Ceramic matrix composites based on SiC with continuous fibres (SiC f /SiC) are considered promising structural materials for future fusion devices. It was still to clarify, whether impurities in industrial SiC f /SiC could jeopardise radiological advantages. Experimental impurity analyses revealed a two-dimensionally reinforced SiC f /SiC with the matrix produced by CVI as very pure. Chemo-spectrometric methods were combined with radioactivation methods (CPAA, NAA). A quantification of the main constituents Si, C and O was added. Calculations with the FISPACT-2.4 code and EAF-2 library identified elements detrimental for different low-activation criteria. For the neutron exposure, EEF reactor-study first wall and blanket conditions were simulated. The calculated SiC f /SiC included 48 trace elements. Even under conservative assumptions, all low-activation limits of European interest are fulfilled. Exclusively the hands-on recycling limit for the First Wall can intrinsically not be satisfied with SiC. The theoretical goal of a SiC f /SiC depleted of 28 Si (isotopic tailoring) is critically discussed. ((orig.))

  1. Phase Equilibria of the Sn-Ni-Si Ternary System and Interfacial Reactions in Sn-(Cu)/Ni-Si Couples

    Fang, Gu; Chen, Chih-chi

    2015-07-01

    Interfacial reactions in Sn/Ni-4.5 wt.%Si and Sn-Cu/Ni-4.5 wt.%Si couples at 250°C, and Sn-Ni-Si ternary phase equilibria at 250°C were investigated in this study. Ni-Si alloys, which are nonmagnetic, can be regarded as a diffusion barrier layer material in flip chip packaging. Solder/Ni-4.5 wt.%Si interfacial reactions are crucial to the reliability of soldered joints. Phase equilibria information is essential for development of solder/Ni-Si materials. No ternary compound is present in the Sn-Ni-Si ternary system at 250°C. Extended solubility of Si in the phases Ni3Sn2 and Ni3Sn is 3.8 and 6.1 at.%, respectively. As more Si dissolves in these phases their lattice constants decrease. No noticeable ternary solubility is observed for the other intermetallics. Interfacial reactions in solder/Ni-4.5 wt.%Si are similar to those for solder/Ni. Si does not alter the reaction phases. No Si solubility in the reaction phases was detected, although rates of growth of the reaction phases were reduced. Because the alloy Ni-4.5 wt.%Si reacts more slowly with solders than pure Ni, the Ni-4.5 wt.%Si alloy could be a potential new diffusion barrier layer material for flip chip packaging.

  2. Materials and devices for quantum information processing in Si/SiGe

    Sailer, Juergen

    2010-12-15

    In this thesis, we cover and discuss the complete way from material science, the fabrication of two-dimensional electron systems (2DES) in Si/SiGe heterostructures in molecular beam epitaxy (MBE), to quantum effects in few-electron devices based on these samples. We applied and compared two different approaches for the creation of pseudo-substrates that are as smooth, relaxed and defect free as possible. In the 'graded buffer' concept, starting from pure Si, the Ge content of the SiGe alloy is slowly and linearly increased until the desired Ge content is reached. In contrast, in the so-called 'low-temperature Si' concept, the SiGe alloy is deposited directly with the final Ge content, but onto a layer of highly defective Si. In terms of crystal defects, the 'graded buffer' turned out to be superior in comparison to the 'low-temperature Si' concept at the expense of a significantly higher material consumption. By continued optimization of the growth process, aiming at reducing the influence of the impurity, it nevertheless became possible to improve the charge carrier mobility from a mere 2000 cm{sup 2}/(Vs) to a record mobility exceeding 100 000 cm{sup 2}/(Vs). Within this work, we extended our MBE system with an electron beam evaporator for nuclear spin free {sup 28}Si. Together with the already existing effusion cell for {sup 70}Ge we were able to realize first 2DES in a nuclear spin free environment after successfully putting it to operation. The highest mobility 2DES in a nuclear spin free environment which have been realized in this thesis exhibited electron mobilities of up to 55 000 cm{sup 2}/(Vs). Quantum effects in Si/SiGe have been investigated in two- and zero-dimensional nanostructures. A remarkable phenomenon in the regime of the integer quantum Hall effect in Si/SiGe 2DES has been discovered and researched. For applications in quantum information processing and for the creation of qubits it is mandatory to

  3. Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells

    Ryota Takabe

    2016-08-01

    Full Text Available Fabrication of p-BaSi2(20nm/n-Si heterojunction solar cells was performed with different a-Si capping layer thicknesses (da-Si and varying air exposure durations (tair prior to the formation of a 70-nm-thick indium-tin-oxide electrode. The conversion efficiencies (η reached approximately 4.7% regardless of tair (varying from 12–150 h for solar cells with da-Si = 5 nm. In contrast, η increased from 5.3 to 6.6% with increasing tair for those with da-Si = 2 nm, in contrast to our prediction. For this sample, the reverse saturation current density (J0 and diode ideality factor decreased with tair, resulting in the enhancement of η. The effects of the variation of da-Si (0.7, 2, 3, and 5 nm upon the solar cell performance were examined while keeping tair = 150 h. The η reached a maximum of 9.0% when da-Si was 3 nm, wherein the open-circuit voltage and fill factor also reached a maximum. The series resistance, shunt resistance, and J0 exhibited a tendency to decrease as da-Si increased. These results demonstrate that a moderate oxidation of BaSi2 is a very effective means to enhance the η of BaSi2 solar cells.

  4. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  5. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO 2 films thermally grown using ion beam analyses

    Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.

    2012-02-01

    The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.

  6. Ordering of vacancies on Si(001)

    Zandvliet, Henricus J.W.

    1997-01-01

    Missing dimer vacancies are always present on the clean Si(001) surface. The vacancy density can be increased by ion bombardment (Xe+, Ar+), etching (O2, Br2, I2, etc.) or Ni contamination. The equilibrium shape at low vacancy concentrations (<0.2¿0.3 monolayers) of these vacancy islands is

  7. siRNA for Influenza Therapy

    Sailen Barik

    2010-07-01

    Full Text Available Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world's population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA, has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here.

  8. siRNA for Influenza Therapy.

    Barik, Sailen

    2010-07-01

    Influenza virus is one of the most prevalent and ancient infections in humans. About a fifth of world's population is infected by influenza virus annually, leading to high morbidity and mortality, particularly in infants, the elderly and the immunocompromised. In the US alone, influenza outbreaks lead to roughly 30,000 deaths each year. Current vaccines and anti-influenza drugs are of limited use due to high mutation rate of the virus and side effects. In recent years, RNA interference, triggered by synthetic short interfering RNA (siRNA), has rapidly evolved as a potent antiviral regimen. Properly designed siRNAs have been shown to function as potent inhibitors of influenza virus replication. The siRNAs outperform traditional small molecule antivirals in a number of areas, such as ease of design, modest cost, and fast turnaround. Although specificity and tissue delivery remain major bottlenecks in the clinical applications of RNAi in general, intranasal application of siRNA against respiratory viruses including, but not limited to influenza virus, has experienced significant success and optimism, which is reviewed here.

  9. Grafting cavitands on the Si(100) surface.

    Condorelli, Guglielmo G; Motta, Alessandro; Favazza, Maria; Fragalà, Ignazio L; Busi, Marco; Menozzi, Edoardo; Dalcanale, Enrico; Cristofolini, Luigi

    2006-12-19

    Cavitand molecules having double bond terminated alkyl chains and different bridging groups at the upper rim have been grafted on H-terminated Si(100) surface via photochemical hydrosilylation of the double bonds. Pure and mixed monolayers have been obtained from mesitylene solutions of either pure cavitand or cavitand/1-octene mixtures. Angle resolved high-resolution X-ray photoelectron spectroscopy has been used as the main tool for the monolayer characterization. The cavitand decorated surface consists of Si-C bonded layers with the upper rim at the top of the layer. Grafting of pure cavitands leads to not-well-packed layers, which are not able to efficiently passivate the Si(100) surface. By contrast, monolayers obtained from cavitand/1-octene mixtures consist of well-packed layers since they prevent silicon oxidation after aging. AFM measurements showed that these monolayers have a structured topography, with objects protruding from the Si(100) surface with average heights compatible with the expected ones for cavitand molecules.

  10. A porous SiC ammonia sensor

    Connolly, E.J.; Timmer, B.H.; Pham, H.T.M.; Groeneweg, J.; Sarro, P.M.; Olthuis, Wouter; French, P.J.

    2005-01-01

    When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as 0.5 ppm could be detected. We report the fabrication and preliminary

  11. Study of the Si fullerene cage isomers

    Fthenakis, Z.G.; Havenith, R.W.A.; Menon, M.; Fowler, P.W.

    2005-01-01

    We present the results of a study on the structural and electronic properties of the Si38 fullerene isomers, which are constructed by making all possible permutations among their pentagons and hexagons. These structures were firstly fully optimized with a tight binding molecular dynamics method and

  12. Photoelectrochemical study of Si type P

    Ferreira, J.L.; Decker, F.

    1984-01-01

    Electrochemical reductions were studied at p-Si electrode under illumination and in the dark. Charge transfer mechanisms from the conduction and the valence band to different redox ions in solution were distinguished. Photoelectrochemical solar energy conversion has been studied as a particular case. (C.L.B.) [pt

  13. $^{31}$Si Self-Diffusion in Si-Ge Alloys and Si-(B-)C-N Ceramics and Diffusion Studies for Al and Si Beam Developments

    Nylandsted larsen, A; Voss, T L; Strohm, A

    2002-01-01

    An invaluable method for studying diffusion in solids is the radiotracer technique. However, its applicability had been restricted to radiotracer atoms with half-lives $t_{1/2}$ of about 1~d or longer. Within the framework of IS372 a facility was developed in which short-lived radiotracer atoms ( 5min $\\scriptstyle{\\lesssim}$ $t_{1/2}\\scriptstyle{\\lesssim}$1 d ) can be used. For the implantation of the short-lived tracers the facility is flanged to the ISOLDE beamline, and all post-implantation steps required in the radiotracer technique are done in situ.\\\\ After successful application of this novel technique in diffusion studies of $^{11}$C ($t_{1/2}$ = 20.3 min), this experiment aims at performing self-diffusion studies of $^{31}$Si ($t_{1/2}$ = 2.6~h) in Si--Ge alloys and in amorphous Si--(B--)C--N ceramics.\\\\ Our motivation for measuring diffusion in Si--Ge alloys is their recent technological renaissance as well as the purpose to test the prediction that in these alloys the self-diffusion mechanism chang...

  14. SiD Letter of Intent

    Aihara, H.; Oreglia, M.; Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; Zhang, Q.; Srivastava, A.; Butler, J.M.; Goldstein, Joel; Velthuis, J.; Radeka, V.; Zhu, R.-Y.; Lutz, P.; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; Grefe, C.; Klempt, W.; Linssen, L.; Schlatter, D.; Speckmayer, P.; Thom, J.; Yang, J.; Christian, D.C.; Cihangir, S.; Cooper, W.E.; Demarteau, M.; Fisk, H.E.; Garren, L.A.; Krempetz, K.; Kutschke, R.K.; Lipton, R.; Para, A.; Tschirhart, R.; Wenzel, H.; Yarema, R.; Grunewald, M.; Pankov, A.; U., Gomel State Tech.; Dutta, T.; Dauncey, P.D.; Balbuena, J.P.; Fleta, C.; Lozano, M.; Ullan, M.; Christian, G.B.; Faus-Golfe, A.; Fuster, J.; Lacasta, C.; Marinnas, C.; Vos, M.; Duarte, J.; Fernandez, M.; Gonzalez, J.; Jaramillo, R.; Lopez, Virto A.; Martinez-Eivero, C.; Moya, D.; Ruiz-Mimeno, A.; Vila, I.; Colledani, C.; Dorokhov, A.; Hu-Guo, C.; Winter, M.; Moortgat-Pick, G.; Onoprienko, D.V.; Kim, G.N.; Park, H.; Adloff, C.; Blaha, J.; Blaising, J.-J.; Cap, S.; Chefdeville, M.; Drancourt, C.; Espargiliare, A.; Gaglione, R.; Geffroy, N.; Jacquemier, J.; Karyotakis, Y.; Prast, J.; Vouters, G.; Gronberg, J.; Walston, S.; Wright, D.; Sawyer, L.; Laloum, M.; Ciobanu, C.; Chauveau, J.; Savoy-Navarro, A.; Andricek, L.; Moser, H.-G.; Cowan, R.f.; Fisher, P.; Yamamoto, R.K.; Kenney, ClMl; Boos, E.E.; Merkin, M.; Chen, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Zutshi, V.; Galkin, V.; D'Ascenzo, N.; Ossetski, D.; Saveliev, V.; Kapusta, F.; De Masi, R.; Vrba, V.; Lu, C.; McDonald, K.T.; Smith, A.J.S.; Bortoletto, D.; Coath, R.; Crooks, J.; Damerell, C.; Gibson, M.; Nichols, A.; Stanitzki, M.; Strube, J.; Turchetta, R.; Tyndel, M.; Weber, M.; Worm, S.; Zhang, Z.; Barklow, T.L.; Belymam, A.; Breidenbach, M.; Cassell, R.; Craddock, W.; Deaconu, C.; Dragone, A.; Graf, N.A.; Haller, G.; Herbst, R.; Hewett, J.L.; Jaros, J.A.; Johnson, A.S.; Kim, P.C.; MacFarlane, D.B.; Markiewicz, T.; Maruyama, T.; McCormick, J.; Moffeit, K.; Neal, H.A.; Nelson, T.K.; Oriunno, M.; Partridge, R.; Peskin, M.E.; Rizzo, T.G.; Rowson, P.; Su, D.; Woods, M.; Chakrabarti, S.; Dieguez, A.; Garrido, Ll.; Kaminski, J.; Conway, J.S.; Chertok, M.; Gunion, J.; Holbrook, B.; Lander, R.L.; Tripathi, S.M.; Fadeyev, V.; Schumm, B.A.; Oreglia, M.; Gill, J.; Nauenberg, U.; Oleinik, G.; Wagner, S.R.; Ranjan, K.; Shivpuri, R.; Varner, G.S.; Orava, R.; Van Kooten, R.; Bilki, B.; Charles, M.; Kim, T.J.; Mallik, U.; Norbeck, E.; Onel, Y.; Brau, B.P.; Willocq, S.; Taylor, G.N.; Riles, Keith; Yang, H.-J.; Kriske, R.; Cremaldi, L.; Rahmat, R.; Lastovicka-Medin, G.; Seidel, S.; Hildreth, M.D.; Wayne, M.; Brau, J.E.; Frey, R.; Sinev, N.; Strom, D.M.; Torrence, E.; Banda, Y.; Burrows, P.N.; Devetak, E.; Foster, B.; Lastovicka, T.; Li, Y.-M.; Nomerotski, A.; Riera-Babures, J.; Vilasis-Cardona, X.; Manly, S.; Adeva, B.; Iglesias Escudero, C.; Vazquez Regueiro, P.; Saborido Silva, J.J.; Gallas Torreira, A.; Gao, D.; Jie, W.; Jungfeng, Y.; Li, C.; Liu, S.; Liu, Y.; Sun, Y.; Wang, Q.; Yi, J.; Yonggang, W.; Zhao, Z.; De, K.; Farbin, A.; Park, S.; Smith, J.; White, A.P.; Yu, J.; Lou, X.C.; Abe, T.; Iwasaki, M.; Lubatti, H.J.; Band, H.R.; Feyzi, F.; Prepost, R.; Karchin, P.E.; Milstene, C.; Baltay, C.; Dhawan, S.; Kwon, Y.-J.

    2009-01-01

    Letter of intent describing SiD (Silicon Detector) for consideration by the International Linear Collider IDAG panel. This detector concept is founded on the use of silicon detectors for vertexing, tracking, and electromagnetic calorimetry. The detector has been cost-optimized as a general-purpose detector for a 500 GeV electron-positron linear collider.

  15. The Stellar Imager (SI)"Vision Mission"

    Carpenter, Ken; Danchi, W.; Leitner, J.; Liu, A.; Lyon, R.; Mazzuca, L.; Moe, R.; Chenette, D.; Karovska, M.; Allen, R.

    2004-01-01

    The Stellar Imager (SI) is a "Vision" mission in the Sun-Earth Connection (SEC) Roadmap, conceived for the purpose of understanding the effects of stellar magnetic fields, the dynamos that generate them, and the internal structure and dynamics of the stars in which they exist. The ultimate goal is to achieve the best possible forecasting of solar/stellar magnetic activity and its impact on life in the Universe. The science goals of SI require an ultra-high angular resolution, at ultraviolet wavelengths, on the order of 100 micro-arcsec and thus baselines on the order of 0.5 km. These requirements call for a large, multi-spacecraft (less than 20) imaging interferometer, utilizing precision formation flying in a stable environment, such as in a Lissajous orbit around the Sun-Earth L2 point. SI's resolution will make it an invaluable resource for many other areas of astrophysics, including studies of AGN s, supernovae, cataclysmic variables, young stellar objects, QSO's, and stellar black holes. ongoing mission concept and technology development studies for SI. These studies are designed to refine the mission requirements for the science goals, define a Design Reference Mission, perform trade studies of selected major technical and architectural issues, improve the existing technology roadmap, and explore the details of deployment and operations, as well as the possible roles of astronauts and/or robots in construction and servicing of the facility.

  16. Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

    Li Zhong

    2013-01-01

    Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

  17. Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

    Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

    2011-12-15

    The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

  18. siMS Score: Simple Method for Quantifying Metabolic Syndrome.

    Soldatovic, Ivan; Vukovic, Rade; Culafic, Djordje; Gajic, Milan; Dimitrijevic-Sreckovic, Vesna

    2016-01-01

    To evaluate siMS score and siMS risk score, novel continuous metabolic syndrome scores as methods for quantification of metabolic status and risk. Developed siMS score was calculated using formula: siMS score = 2*Waist/Height + Gly/5.6 + Tg/1.7 + TAsystolic/130-HDL/1.02 or 1.28 (for male or female subjects, respectively). siMS risk score was calculated using formula: siMS risk score = siMS score * age/45 or 50 (for male or female subjects, respectively) * family history of cardio/cerebro-vascular events (event = 1.2, no event = 1). A sample of 528 obese and non-obese participants was used to validate siMS score and siMS risk score. Scores calculated as sum of z-scores (each component of metabolic syndrome regressed with age and gender) and sum of scores derived from principal component analysis (PCA) were used for evaluation of siMS score. Variants were made by replacing glucose with HOMA in calculations. Framingham score was used for evaluation of siMS risk score. Correlation between siMS score with sum of z-scores and weighted sum of factors of PCA was high (r = 0.866 and r = 0.822, respectively). Correlation between siMS risk score and log transformed Framingham score was medium to high for age groups 18+,30+ and 35+ (0.835, 0.707 and 0.667, respectively). siMS score and siMS risk score showed high correlation with more complex scores. Demonstrated accuracy together with superior simplicity and the ability to evaluate and follow-up individual patients makes siMS and siMS risk scores very convenient for use in clinical practice and research as well.

  19. Breakdown of coupling dielectrics for Si microstrip detectors

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  20. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  1. Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

    Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

    2018-02-01

    We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

  2. Effect of SiC buffer layer on GaN growth on Si via PA-MBE

    Kukushkin, S. A.; Mizerov, A. M.; Osipov, A. V.; Redkov, A. V.; Telyatnik, R. S.; Timoshnev, S. N.

    2017-11-01

    The study is devoted to comparison of GaN thin films grown on SiC/Si substrates made by the method of atoms substitution with the films grown directly on Si substrates. The growth was performed in a single process via plasma assisted molecular beam epitaxy. The samples were studied via optical microscopy, Raman spectroscopy, ellipsometry, and a comparison of their characteristics was made. Using chemical etching in KOH, the polarity of GaN films grown on SiC/Si and Si substrates was determined.

  3. Protection and systemic translocation of siRNA following oral administration of chitosan/siRNA nanoparticles

    Gonzalez, Borja Ballarin; Dagnæs-Hansen, Frederik; Fenton, Robert A.

    2013-01-01

    , gastrointestinal (GI) deposition, and translocation into peripheral tissue of nonmodified siRNA after oral gavage of chitosan/siRNA nanoparticles in mice. In contrast to naked siRNA, retained structural integrity and deposition in the stomach, proximal and distal small intestine, and colon was observed at 1 and 5...... hours for siRNA within nanoparticles. Furthermore, histological detection of fluorescent siRNA at the apical regions of the intestinal epithelium suggests mucoadhesion provided by chitosan. Detection of intact siRNA in the liver, spleen, and kidney was observed 1 hour after oral gavage, with an organ...

  4. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  5. Compositional and optical properties of SiO x films and (SiO x /SiO y ) junctions deposited by HFCVD

    2014-01-01

    In this work, non-stoichiometric silicon oxide (SiO x ) films and (SiO x /SiO y ) junctions, as-grown and after further annealing, are characterized by different techniques. The SiO x films and (SiO x /SiO y ) junctions are obtained by hot filament chemical vapor deposition technique in the range of temperatures from 900°C to 1,150°C. Transmittance spectra of the SiO x films showed a wavelength shift of the absorption edge thus indicating an increase in the optical energy band gap, when the growth temperature decreases; a similar behavior is observed in the (SiO x /SiO y ) structures, which in turn indicates a decrease in the Si excess, as Fourier transform infrared spectroscopy (FTIR) reveals, so that, the film and junction composition changes with the growth temperature. The analysis of the photoluminescence (PL) results using the quantum confinement model suggests the presence of silicon nanocrystal (Si-nc) embedded in a SiO x matrix. For the case of the as-grown SiO x films, the absorption and emission properties are correlated with quantum effects in Si-nc and defects. For the case of the as-grown (SiO x /SiO y ) junctions, only the emission mechanism related to some kinds of defects was considered, but silicon nanocrystal embedded in a SiO x matrix is present. After thermal annealing, a phase separation into Si and SiO2 occurs, as the FTIR spectra illustrates, which has repercussions in the absorption and emission properties of the films and junctions, as shown by the change in the A and B band positions on the PL spectra. These results lead to good possibilities for proposed novel applications in optoelectronic devices. PACS 61.05.-a; 68.37.Og; 61.05.cp; 78.55.-m; 68.37.Ps; 81.15.Gh PMID:25342935

  6. Physical studies of strained Si/SiGe heterostructures. From virtual substrates to nanodevices

    Minamisawa, Renato Amaral

    2011-10-21

    During the past two decades, the decrease in intrinsic delay of MOSFETs has been driven by the scaling of the device dimensions. The performance improvement has relied mostly in the increase of source velocity with gate scaling, while the transport properties of the channel have remained constant, i.e., those of conventional Si. Starting at the 90 nm node, uniaxial strain has been introduced in the transistor channel in order to further increase the source velocity. Beyond the 32 nm node, novel channel materials, with superior carrier velocities, and novel device architectures are required in order to continue the performance enhancement of MOSFETs while preserving the electrostatic control. In this Thesis, different physical aspects of strained Si and SiGe materials are investigated as a mean to increase carrier velocity in MOSFET channels. Novel approaches for the fabrication of strained Si based on ion implantation and anneal induced relaxation of virtual substrates are developed. The strain relaxation of SiGe layers is improved using a buried thin Si:C layer in the Si(100) substrate. Further, a Si{sup +} ion implantation and annealing method is investigated for relaxing virtual substrates using lower implantation dose. Finally, the uniaxial relaxation of {l_brace}110{r_brace} surface oriented substrates is demonstrated using a He ion implantation and anneal technique. Apart of channel material studies, the fundamental and technological challenges involved in the integration of strained Si and SiGe into MOSFETs are assessed. The impact of source and drain formation on the elastic strain and electrical properties of strained Si layers and nanowires is examined. Also, the formation of ultra-shallow junction in strained Si/strained Si{sub 0.5}Ge{sub 0.5}/SSOI heterostructures is investigated using different types of ion implanted specie and annealing. The results show that BF{sup +}{sub 2} implantation and low temperature annealing are suitable approaches for

  7. Current status and recent research achievements in SiC/SiC composites

    Katoh, Y., E-mail: katohy@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Snead, L.L. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Henager, C.H. [Pacific Northwest National Laboratory, Richland, WA (United States); Nozawa, T. [Japan Atomic Energy Agency, Rokkasho, Aomori (Japan); Hinoki, T. [Institute of Advanced Energy, Kyoto University, Kyoto (Japan); Iveković, A.; Novak, S. [Jožef Stefan Institute, Ljubljana (Slovenia); Gonzalez de Vicente, S.M. [EFDA Close Support Unit, Garching (Germany)

    2014-12-15

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  8. Current status and recent research achievements in SiC/SiC composites

    Katoh, Y.; Snead, L.L.; Henager, C.H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S.M.

    2014-01-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications

  9. SiC/SiC composites through transient eutectic-phase route for fusion applications

    Katoh, Y.; Kohyama, A.; Nozawa, T.; Sato, M.

    2004-01-01

    Factors that may limit attractiveness of silicon-carbide-based ceramic composites to fusion applications include thermal conductivity, applicable design stress, chemical compatibility, hermeticity, radiation stability and fabrication cost. A novel SiC/SiC composite, which has recently been developed through nano-infiltration and transient eutectic-phase (NITE) processing route, surpasses conventional materials in many of these properties. In this paper, the latest development, property evaluation and prospect of the NITE SiC/SiC composites are briefly reviewed. The topics range from fundamental aspects of process development to industrial process development. Elevated temperature strength, fracture behavior, and thermo-physical properties in various environments are summarized. Future directions of materials and application technology development are also discussed

  10. Current status and recent research achievements in SiC/SiC composites

    Katoh, Y.; Snead, L. L.; Henager, C. H.; Nozawa, T.; Hinoki, T.; Iveković, A.; Novak, S.; Gonzalez de Vicente, S. M.

    2014-12-01

    The silicon carbide fiber-reinforced silicon carbide matrix (SiC/SiC) composite system for fusion applications has seen a continual evolution from development a fundamental understanding of the material system and its behavior in a hostile irradiation environment to the current effort which is directed at a broad-based program of technology maturation program. In essence, over the past few decades this material system has steadily moved from a laboratory curiosity to an engineering material, both for fusion structural applications and other high performance application such as aerospace. This paper outlines the recent international scientific and technological achievements towards the development of SiC/SiC composite material technologies for fusion application and discusses future research directions. It also reviews the materials system in the larger context of progress to maturity as an engineering material for both the larger nuclear community and broader engineering applications.

  11. Single-shot readout of accumulation mode Si/SiGe spin qubits using RF reflectometry

    Volk, Christian; Martins, Frederico; Malinowski, Filip; Marcus, Charles M.; Kuemmeth, Ferdinand

    Spin qubits based on gate-defined quantum dots are promising systems for realizing quantum computation. Due to their low concentration of nuclear-spin-carrying isotopes, Si/SiGe heterostructures are of particular interest. While high fidelities have been reported for single-qubit and two-qubit gate operations, qubit initialization and measurement times are relatively slow. In order to develop fast read-out techniques compatible with the operation of spin qubits, we characterize double and triple quantum dots confined in undoped Si/Si0.7Ge0.3 heterostructures using accumulation and depletion gates and a nearby RF charge sensor dot. We implement a RF reflectometry technique that allows single-shot charge read-out at integration times on the order of a few μs. We show our recent advancement towards implementing spin qubits in these structures, including spin-selective single-shot read-out.

  12. Self-assembled patches in PtSi/n-Si (111) diodes

    Afandiyeva, I. M.; Altιndal, Ş.; Abdullayeva, L. K.; Bayramova, A. İ.

    2018-05-01

    Using the effect of the temperature on the capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V n), apparent barrier height (Φ Bapp), series resistance (R s) and the interface state density N ss have been investigated. From the temperature dependence of (C–V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79–360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).

  13. Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique

    Hussein, Mohammed Jabbar; Yunus, W. Mahmood Mat; Kamari, Halimah Mohamed; Zakaria, Azmi

    2015-10-01

    Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency f c . In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm2/s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon.

  14. Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

    Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

    2001-01-01

    It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

  15. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  16. Ordered GeSi nanorings grown on patterned Si (001 substrates

    Ma Yingjie

    2011-01-01

    Full Text Available Abstract An easy approach to fabricate ordered pattern using nanosphere lithography and reactive iron etching technology was demonstrated. Long-range ordered GeSi nanorings with 430 nm period were grown on patterned Si (001 substrates by molecular beam epitaxy. The size and shape of rings were closely associated with the size of capped GeSi quantum dots and the Si capping processes. Statistical analysis on the lateral size distribution shows that the high growth temperature and the long-term annealing can improve the uniformity of nanorings. PACS code1·PACS code2·more Mathematics Subject Classification (2000 MSC code1·MSC code2·more

  17. Annealing characteristics of SiO2-Si structures after incoherent light pulse processing

    Sieber, N.; Klabes, R.; Voelskow, M.; Fenske, F.

    1982-01-01

    The behaviour of oxide charges and interface charges in boron implanted and non-implanted SiO 2 -Si structures as well as the electrical activation of the dopants by the action of incoherent light pulses was studied. Depth profiles of electrically active boron ions are presented for different annealing conditions as measured by the pulsed C-V method. It can be concluded that exposure of MOS structures to intense radiation of flash lamps does not increase the fixed charge and the fast state density at the SiO 2 -Si interface if optimal annealing conditions (energy densities) are employed. Low dose boron implanted silicon can be electrically activated without diffusion or segregation of dopants

  18. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Scholz, R.; Greeff, J. de; Vinche, C.

    1998-01-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 (Ω m) -1 at 20 deg. C to 550 (Ω m) -1 at 1000 deg.C. The irradiation reduced only slightly the magnitude of σ indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  19. Magnetohydrodynamic (MHD) considerations for liquid metal blanket and a SiC/SiC composite structure

    Scholz, R.; Greeff, J. de; Vinche, C. [Commission Europeenne Community, JRC, Vatican City State, Holy See (Italy)

    1998-07-01

    The electrical conductivity was measured on SiC/SiC composite specimens, in the as-received conditions and after neutron irradiation, for temperatures between 20 deg. C and 1000 deg. C. The tests were aimed at estimating the magnitude of MHD effects in liquid metal blankets and a SiC/SiC composites structure. The electrical conductivity of the unirradiated samples increased continuously with temperature and ranged from 330 ({omega} m){sup -1} at 20 deg. C to 550 ({omega} m){sup -1} at 1000 deg.C. The irradiation reduced only slightly the magnitude of {sigma} indicating the materials tested cannot be treated as an electrical insulator in a MHD analysis for liquid metal blankets. (authors)

  20. Strength of SiCf-SiCm composite tube under uniaxial and multiaxial loading

    Shapovalov, Kirill; Jacobsen, George M.; Alva, Luis; Truesdale, Nathaniel; Deck, Christian P.; Huang, Xinyu

    2018-03-01

    The authors report mechanical strength of nuclear grade silicon carbide fiber reinforced silicon carbide matrix composite (SiCf-SiCm) tubing under several different stress states. The composite tubing was fabricated via a Chemical Vapor Infiltration (CVI) process, and is being evaluated for accident tolerant nuclear fuel cladding. Several experimental techniques were applied including uniaxial tension, elastomer insert burst test, open and closed end hydraulic bladder burst test, and torsion test. These tests provided critical stress and strain values at proportional limit and at ultimate failure points. Full field strain measurements using digital image correlation (DIC) were obtained in order to acquire quantitative information on localized deformation during application of stress. Based on the test results, a failure map was constructed for the SiCf-SiCm composites.